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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 1393. Отображено 100.
02-08-2012 дата публикации

Solder, soldering method, and semiconductor device

Номер: US20120193800A1
Автор: Keisuke Uenishi, Nobuhiro Imaizumi, Seiki Sakuyama, Tetsuhiro Nakanishi, Toshiya Akamatsu
Принадлежит: Fujitsu Ltd

A solder includes Sn (tin), Bi (bismuth) and Zn (zinc), wherein the solder has a Zn content of 0.01% by weight to 0.1% by weight.

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Номер записи: 1
20-12-2012 дата публикации

Disk with an electrical connection element

Номер: US20120318566A1
Автор: Andreas Schlarb, Bernhard Reul, Mitja Rateiczak, Stefan Ziegler
Принадлежит: Saint Gobain Glass France SAS

The present invention relates to a disk with an electrical connection element, having a substrate with a first coefficient of thermal expansion, an electrically conductive structure on a region of the substrate, and a connection element with a second coefficient of thermal expansion.

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Номер записи: 2
11-04-2013 дата публикации

Conductive bonding material, conductor bonding method, and semiconductor device production method

Номер: US20130087605A1
Автор: Kuniko Ishikawa, Masayuki Kitajima, Takashi Kubota, Takatoyo Yamakami
Принадлежит: Fujitsu Ltd

A conductive bonding material comprising: a first metal particle; a second metal particle having an average particle diameter larger than an average particle diameter of the first metal particle; and a third metal particle having an average particle diameter larger than the average particle diameter of the first metal particle, a relative density larger than a relative density of the first metal particle, and a melting point higher than a melting point of the second metal particle.

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Номер записи: 3
16-05-2013 дата публикации

Bi-Sn Based High-Temperature Solder Alloy

Номер: US20130121874A1
Автор: Minoru Toyoda, Minoru Ueshima, Yoshimi Inagawa
Принадлежит: Senju Metal Industry Co Ltd

A high-temperature solder alloy is a Bi—Sn based solder alloy containing at least 90 mass % of Bi, further containing 1-5 mass % of Sn, at least one element selected from Sb and/or Ag each in an amount of 0.5-5 mass %, and preferably further containing 0.0004-0.01 mass % of P.

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Номер записи: 4
22-08-2013 дата публикации

Liquid metal ion source and secondary ion mass spectrometric method and use thereof

Номер: US20130216427A1
Автор: Andreas Duetting, Felix Kollmer, Peter Hoerster
Принадлежит: ION TOF Tech GmbH

A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

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Номер записи: 5
14-11-2013 дата публикации

THERMOELECTRIC MATERIAL AND METHOD OF PREPARING THE THERMOELECTRIC MATERIAL

Номер: US20130298729A1
Автор: BERKOWITZ Ami, JIN Sung-Ho, LEE Kyu-Hyoung, LEE Sang-mock
Принадлежит:

A method of preparing thermoelectric material particles, the method comprising: disposing a first electrode and a second electrode in a dielectric liquid medium, wherein the first and second electrodes each comprise a thermoelectric material; applying an electrical potential between the first and second electrodes to cause a spark between the first and second electrodes to provide a vaporized thermoelectric material at a sparking point of at least one of the first and second electrodes; and cooling the vaporized thermoelectric material with the dielectric liquid medium to prepare the thermoelectric material particles. 1. A method of preparing thermoelectric material particles , the method comprising:disposing a first electrode and a second electrode in a dielectric liquid medium, wherein the first and second electrodes each comprise a thermoelectric material;applying an electrical potential between the first and second electrodes to cause a spark between the first and second electrodes to provide a vaporized thermoelectric material at a sparking point of at least one of the first and second electrodes; andcooling the vaporized thermoelectric material with the dielectric liquid medium to prepare the thermoelectric material particles.2. The method of claim 1 , wherein the dielectric liquid medium comprises water claim 1 , an organic solvent claim 1 , a cryogenic liquefied gas claim 1 , or a combination thereof.3. The method of claim 2 , wherein the dielectric liquid medium is water.4. The method of claim 1 , wherein the thermoelectric material is a bulk thermoelectric material and comprises a Bi—Sb alloy claim 1 , an Sb—Te alloy claim 1 , a Bi—Te alloy claim 1 , a Bi—Sb—Te alloy claim 1 , a Bi—Sb—Te—Se alloy claim 1 , or a combination thereof.5. The method of claim 1 , wherein the thermoelectric material is represented by the Formula 1:{'br': None, 'sub': x', 'y', 'z, 'BiSbTe,\u2003\u2003Formula 1'}wherein 0≦x≦2, y=2−x, and 2.7≦z≦3.3.6. The method of claim 5 , wherein ...

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Номер записи: 6
13-02-2014 дата публикации

High-temperature lead-free solder alloy

Номер: US20140044479A1
Автор: Minoru Ueshima, Rei Fujimaki
Принадлежит: Senju Metal Industry Co Ltd

A Sn—Sb—Ag—Cu based high-temperature lead-free solder alloy which has excellent connection reliability and which does not form a low melting point phase even when solidified by slow cooling is provided. It has an alloy composition consisting essentially of, in mass percent, Sb: 35-40%, Ag: 13-18%, Cu: 6-8%, and a remainder of Sn.

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Номер записи: 7
03-01-2019 дата публикации

METHOD OF MANUFACTURING JOINED BODY, AND JOINING MATERIAL

Номер: US20190001408A1
Автор: KAWAGUCHI Yoshihiro, Noguchi Masumi
Принадлежит:

A method of manufacturing a joined body which includes arranging a joining material containing a first metal powder and a second metal powder having a higher melting point than the first metal powder between a first member and a second member; and heating the joining material arranged between the first member and the second member. The first metal powder is formed of Sn or an alloy containing Sn, and the second metal powder is formed of a Cu—Ni alloy, a Cu—Mn alloy, a Cu—Al alloy, or a Cu—Cr alloy; a 50% volume grain size D50 of the second metal powder is 20 μm or more; and when D90 is a 90% volume grain size and D10 is a 10% volume grain size, (D90−D10)/D50 of the second metal powder is 1.6 or less. 1. A method of manufacturing a joined body , the method comprising:arranging a joining material between a first member and a second member, the joining material containing a first metal powder and a second metal powder having a higher melting point than the first metal powder; andheating the joining material arranged between the first member and the second member so as to join the first member and the second member to each other,the first metal powder including Sn or an alloy containing Sn,the second metal powder including a Cu—Ni alloy, a Cu—Mn alloy, a Cu—Al alloy, or a Cu—Cr alloy,a 50% volume grain size D50 of the second metal powder is 20 μm or greater, and(D90−D10)/D50 of the second metal powder is 1.6 or less, wherein D90 is a 90% volume grain size and D10 is a 10% volume grain size.2. The method of manufacturing a joined body according to claim 1 , further comprising filling a void between the first member and the second member with a resin after the heating of the joining material.3. The method of manufacturing a joined body according to claim 1 , wherein the D50 of the second metal powder is 20 μm to 200 μm.4. The method of manufacturing a joined body according to claim 1 , wherein (D90−D10)/D50 of the second metal powder is 0.5 to 1.6.5. The method of ...

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Номер записи: 8
07-01-2021 дата публикации

SLIDING MEMBER

Номер: US20210003169A1
Автор: Ichikawa Masaya
Принадлежит: TAIHO KOGYO CO., LTD.

A sliding member including an overlay capable of realizing good fatigue resistance while preventing interlayer peeling. The sliding member includes an overlay formed of an alloy plating film of Bi and Sb. The overlay contains Bi, Sb, and unavoidable impurities. The concentration of Sb on the surface of the overlay is 0.92% by mass or more and 13% by mass or less. 1. (canceled)2. A sliding member comprising:an overlay formed of an alloy plating film of Bi and Sb,wherein the overlay contains Bi, Sb, and unavoidable impurities, andwherein a concentration of Sb on a surface of the overlay is 0.92% by mass or more and 13% by mass or less,wherein the overlay has a concentration gradient in which the concentration of Sb increases as a depth from the surface increases.3. (canceled) The present invention relates to a sliding member including an overlay of an alloy plating film of Bi and Sb.There is known a sliding member including an overlay that includes a coating layer of Bi and an intermediate layer of Ag (see Patent Literature 1). In Patent Literature 1, the interlayer adhesion of the overlay is improved by adjusting the size of the crystal grains of Ag in the intermediate layer. Furthermore, by adjusting the size of the Bi crystal grains in the coating layer, the adhesion and fatigue resistance of the film of the overlay are improved.Patent Literature 1: JP 2006-266445 AHowever, even if the interlayer adhesion is improved by adjusting the size of the crystal grains as in Patent Literature 1, there is a problem that interlayer peeling cannot be avoided since the overlay has a two-layer structure. Furthermore, when the overlay has a two-layer structure, there is a problem that a sudden change in bearing characteristics cannot be avoided during wear.The present invention has been made in view of the above problems, and an object of the present invention is to provide a sliding member including an overlay capable of realizing good fatigue resistance while preventing ...

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Номер записи: 9
12-01-2017 дата публикации

Lead-free solder compositions

Номер: US20170008131A1
Автор: Jianxing Li, Michael R. Pinter, Vikki L. Johnson
Принадлежит: Honeywell International Inc

A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.

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Номер записи: 10
16-01-2020 дата публикации

Sb-Te-Based Alloy Sintered Compact Sputtering Target

Номер: US20200017955A1
Автор: Koido Yoshimasa, Takahashi Hideyuki
Принадлежит:

An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering. 1. An Sb—Te-based alloy sputtering target having a composition containing Sb and Te as main constituent elements thereof and carbon or boron in an amount of more than 10 at % and equal to or less than 30 at % , having a relative density of 97.85% or more , and having a structure comprising grains of an Sb—Te-based alloy phase and a dispersion of grains of the carbon or boron , wherein the grains of the Sb—Te-based alloy phase have an average size of 3 μm or less and a standard deviation of less than 1.00 , the grains of the carbon or boron have an average size of 0.5 μm or less and a standard deviation of less than 0.20 , and , for the average size of the grains of the Sb—Te-based alloy phase expressed by X and the average size of the grains of the carbon or boron expressed by Y , a ratio Y/X is within a range of from 0.155 to 0.5.2. The Sb—Te-based alloy sputtering target according to claim 1 , containing one or more elements selected from the group consisting of Ag claim 1 , In claim 1 , Si claim 1 , Ge claim 1 , Ga claim 1 , Ti claim 1 , Au claim 1 , Pt claim 1 , and Pd in a total amount of 30 at % or less.3. The Sb—Te- ...

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Номер записи: 11
23-01-2020 дата публикации

THERMOELECTRIC COMPOSITIONS AND METHODS OF FABRICATING HIGH THERMOELECTRIC PERFORMANCE MgAgSb-BASED MATERIALS

Номер: US20200024701A1
Автор: Jie Qing, Lan Yucheng, Ren Zhifeng, Sui Jiehe, Tang Zhongjia, Zhao Huaizhou
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

Systems and methods of manufacturing a thermoelectric, high performance material by using ball-milling and hot pressing materials according to various formulas, where some formulas substitute a different element for part of one of the elements in the formula, in order to obtain a figure of merit (ZT) suitable for thermoelectric applications. 1. A method of manufacturing a thermoelectric material comprising:ball-milling a plurality of components to form at least one powder;forming a pressed component by hot-pressing the at least one powder; andannealing the pressed component, wherein the pressed component comprises a ZT value of at least 0.85 at room temperature.2. The method of claim 1 , wherein a first component of the plurality of components comprises magnesium (Mg) claim 1 , silver (Ag) claim 1 , antimony (Sb) claim 1 , copper (Cu) claim 1 , or nickel (Ni) claim 1 , wherein a second component of the plurality of components is one of magnesium (Mg) claim 1 , silver (Ag) claim 1 , antimony (Sb) claim 1 , copper (Cu) claim 1 , or nickel (Ni) claim 1 , and wherein the second component is not the same as the first component.3. The method of claim 1 , wherein a third component of the plurality of components comprises magnesium (Mg) claim 1 , silver (Ag) claim 1 , antimony (Sb) claim 1 , copper (Cu) claim 1 , or nickel (Ni) claim 1 , wherein the third component different than the first component and the second component claim 1 , wherein a fourth component of the plurality of components magnesium (Mg) claim 1 , silver (Ag) claim 1 , antimony (Sb) claim 1 , copper (Cu) claim 1 , chromium (Cr) claim 1 , zinc (Zn) claim 1 , or nickel (Ni) claim 1 , and wherein the fourth component different than the first component claim 1 , the second component claim 1 , and the third component.4. The method of claim 1 , wherein hot-pressing the powder comprises holding the second mixture at a temperature from about 125° C. to about 300° C. for a period of about 0.5 minutes to about 20 ...

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Номер записи: 12
23-01-2020 дата публикации

STABLE BINARY NANOCRYSTALLINE ALLOYS AND METHODS OF IDENTIFYING SAME

Номер: US20200025697A1
Автор: Murdoch Heather A., Schuh Christopher A.
Принадлежит: Massachusetts Institute of Technology

Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. In different aspects, an enthalpy of mixing of the binary alloy may be calculated as a first thermodynamic parameter, and an enthalpy of segregation of the binary alloy may be calculated as a second thermodynamic parameter. In another example, a diagram delineating a plurality of regions respectively representing different stable phases of at least one binary alloy is employed, wherein respective regions of the plurality of regions are delineated by at least one boundary determined as a function of at least two thermodynamic parameters associated with grain growth and phase separation of the at least one binary alloy. 143-. (canceled)44. An alloy comprising:a solvent element and a solute element;the alloy comprising at least one of Al—Pb, Co—Bi, Co—Cd, Co—Pb, Cr—Au, Cr—Bi, Cr—La, Cr—Na, Cr—Pb, Cr—Sc, Cr—Sn, Cr—Th, Cr—Y, Cu—Y, Fe—Ba, Fe—Bi, Fe—Ca, Fe—Cd, Fe—In, Fe—La, Fe—Mg, Fe—Pb, Hf—Mg, Hf—Ti, Ir—Cu, Ir—Ni, Ir—Rh, La—Mn, Mn—Ba, Mn—Ca, Mn—Cd, Mn—La, Mn—Mg, Mn—Pb, Mn—Sr, Mn—Tl, Mo—Au, Mo—Cr, Mo—In, Mo—Na, Mo—Sc, Mo—Th, Mo—V, Mo—Y, Nb—Bi, Nb—Cu, Nb—Ti, Nb—Tl, Nb—V, Ni—Pb, Ni—Sn, Ni—Tl, Os—Bi, Os—Co, Os—Ni, Os—Pb, Os—Pt, Os—Rh, Os—Ru, Pb—Al, Pd—Au, Pt—Au, Re—Bi, Re—Co, Re—La, Re—Ni, Re—Pd, Re—Rh, Re—Sb, Re—Sn, Re—Tc, Rh—Au, Rh—Co, Rh—Cu, Rh—Ni, Ru—Bi, Ru—Co, Ru—Hg, Ru—Ni, Ru—Pt, Ru—Sb, Ta—Bi, Ta—Cu, Ta—Hf, Ta—In, Ta—Ti, Ta—Tl, Ta—Zr, Tc—Ni, Tc—Pd, Tc—Rh, Th—La, Th—Sc, Th—Y, V—Bi, V—Cd, V—In, V—Ti, V—Tl, W—Au, W—Cr, W—In, W—Mn, W—Sb, W—Sc, W—Sn, W—Sr, W—Th, W—Ti, W—V, W ...

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Номер записи: 13
23-01-2020 дата публикации

THERMOELECTRIC MATERIAL, MANUFACTURING METHOD OF THERMOELECTRIC MATERIAL, THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC CONVERSION MODULE

Номер: US20200028059A1
Автор: MIZOBE Masanori, NAKASHIMA Nobuaki, Okamura Masami, Yamamoto Shinichi
Принадлежит:

According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 μm or more is present at any vertex of chips of the thermoelectric materials. 1. A thermoelectric material comprising a sintered body formed of a p-type or an n-type thermoelectric material represented by a composition formula shown below and having a MgAgAs type crystal structure as a main phase , {'br': None, 'sub': a1', 'b1', 'c1', 'x', 'y', '100-x-y, '(TiZrHf)αβ'}, 'wherein an area ratio of internal defects by ultrasonic flaw detection in a thickness direction with respect to a surface parallel with one plane of the thermoelectric material is 10% or less, and no defect having a length of 800 μm or more is present in a surface of the thermoelectric material,'}where 0 Подробнее

Номер записи: 14
01-02-2018 дата публикации

HYBRID LEAD-FREE SOLDER WIRE

Номер: US20180029170A1
Автор: LEE NING-CHENG, ZHANG Hongwen
Принадлежит:

A braided solder wire rope includes a first alloy including Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy including Sn, In Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the second alloy controls an interface reaction chemistry with various metallization surface finish materials without interfering with a high temperature performance of the first alloy. The first alloy may have a solidus temperature around 258° C. and at least the first alloy of the first wire and the second alloy of the second wire may be braided together. 1. A braided solder wire rope comprising:a first alloy comprising Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and wherein the first alloy has a solidus temperature around 258° C.;', 'wherein at least the first alloy of a first wire and the second alloy of a second wire are braided together., 'a second alloy comprising Sn, Sn—Sb, Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Sn—Bi, Sn—In, or Bi—In, such that the second alloy controls an interface reaction chemistry with various metallization surface finish materials without interfering with a high temperature performance of the first alloy;'}2. The braided solder wire rope of claim 1 , wherein the first alloy Bi—Ag comprises from 0 to 30 wt % Ag with the remainder being Bi claim 1 , such that the first alloy has the solidus temperature of at least around 260° C.3. The braided solder wire rope of claim 1 , wherein the first alloy Bi—Cu comprises from 0-5 wt % Cu with the remainder being Bi claim 1 , such that the first alloy has the solidus temperature of at least around 270° C.4. The braided solder wire rope of claim 1 , wherein the first alloy Bi—Ag—Cu comprises from 0 to 20 wt % Ag and 0 to 5 wt % Cu with the remainder being Bi claim 1 , such that the first alloy has the solidus temperature of at least around 285° C.5. The braided solder wire rope of claim 1 , wherein the first alloy Bi—Ag—Cu—X (where X=Al claim 1 , Au claim 1 , Co claim 1 , Ga claim 1 , Ge claim 1 , In claim 1 , Mn ...

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Номер записи: 15
04-02-2016 дата публикации

MNBI-BASED MAGNETIC SUBSTANCE, PREPARATION METHOD THEREOF, MNBI-BASED SINTERED MAGNET AND PREPARATION METHOD THEREOF

Номер: US20160035487A1
Автор: Byun Yangwoo, Kim Jinbae
Принадлежит: LG ELECTRONICS INC.

The method of preparing an MnBi-based magnetic substance according to the present invention includes: (a) preparing a mixed melt by simultaneously melting a manganese-based material and a bismuth-based material; (b) forming a non-magnetic MnBi-based ribbon by cooling the mixed melt; and (c) converting the non-magnetic MnBi-based ribbon into a magnetic MnBi-based ribbon by performing a heat treatment. The method for preparing an MnBi-based sintered magnet includes: (a) preparing a magnetic powder by pulverizing the MnBi-based magnetic substance; (b) molding the magnetic powder in a state where a magnetic field is applied; and (c) sintering the molded magnetic powder. 1. A method of preparing an MnBi-based magnetic substance , the method comprising:(a) simultaneously melting a manganese-based material and a bismuth-based material to prepare a mixed melt;(b) cooling the mixed melt to form a non-magnetic MnBi-based ribbon; and(c) performing a heat treatment to convert the non-magnetic MnBi-based ribbon into a magnetic MnBi-based ribbon.2. The method of claim 1 , wherein the melting in step (a) is performed at a temperature of 1 claim 1 ,200° C. or higher.3. The method of claim 1 , wherein the melting in step (a) is a rapid heating process selected from the group consisting of an induction heating process claim 1 , an arc-melting process claim 1 , a mechanochemical process claim 1 , a sintering process claim 1 , and a combination thereof.4. The method of claim 1 , wherein cooling in step (b) is a rapid cooling process selected from the group consisting of a rapid solidification process (RSP) claim 1 , an atomizer process claim 1 , and a combination thereof.5. The method of claim 4 , wherein the rapid solidification process has a wheel speed of 55 to 75 m/s.6. The method of claim 1 , wherein the heat treatment in step (c) is performed at a temperature of 280 to 340° C. and under a pressure of 1 to 5 mPa.7. The method of claim 1 , wherein the heat treatment in step (c) is ...

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Номер записи: 16
05-02-2015 дата публикации

Lead-Free Solder Alloy

Номер: US20150037087A1
Автор: Hikaru Nomura, Ken Tachibana, Kyu-Oh Lee
Принадлежит: Senju Metal Industry Co Ltd

A lead-free solder alloy consisting essentially of, in mass percent, Bi: 31-59%, Sb: 0.15-0.75%, at least one element selected from Cu: 0.3-1.0% and P: 0.002-0.055%, and a balance of Sn has a low melting point for suppressing warping of a thin substrate during soldering. It can form solder joints with high reliability even when used for soldering to electrodes having a Ni coating which contains P, since the growth of a P-rich layer is suppressed so that the shear strength of the joints is improved and the alloy has a high ductility and a high tensile strength.

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Номер записи: 17
01-05-2014 дата публикации

Constructing bismuth antimony thin films with anisotropic single-dirac cones

Номер: US20140119981A1
Автор: Mildred S. Dresselhaus, Shuang Tang
Принадлежит: Massachusetts Institute of Technology

A Bi 1-x Sb x thin film is provided that includes a Dirac-cone with different degrees of anisotropy in their electronic band structure by controlling the stoichiometry, film thickness, and growth orientation of the thin film, so as to result in a consistent inverse-effective mass tensor including non-parabolic or linear dispersion relations.

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Номер записи: 18
04-02-2021 дата публикации

SLIDING MEMBER

Номер: US20210033145A1
Автор: Ichikawa Masaya, SUGA Shigeyuki
Принадлежит: TAIHO KOGYO CO., LTD.

To provide a sliding member including an overlay capable of realizing good fatigue resistance while preventing interlayer peeling. A sliding member including an overlay formed of an alloy plating film of Bi and Sb, and the overlay is bonded to a lining formed of a copper alloy via an intermediate layer containing Ag as a main component. 1. A sliding member comprising an overlay formed of an alloy plating film of Bi and Sb ,wherein the overlay is bonded to a lining formed of a copper alloy via an intermediate layer containing Ag as a main component, andwherein the intermediate layer is formed of an Ag—Sn alloy.2. (canceled) The present invention relates to a sliding member including an overlay of an alloy plating film of Bi and Sb.It is known that an overlay layer is formed of a Bi alloy having a Cu content of 0.1 to 10% by mass and an Sb content of 0.1 to 20% by mass (see Patent Literature 1). Patent Literature 1 discloses that Cu improves the fatigue resistance of the overlay layer by making the crystal structure of the Bi alloy dense. Further, Patent Literature 1 discloses that the addition of Sb can prevent reduction in melting point of the overlay layer and maintain the conformability.Patent Literature 1: JP 3693256 BHowever, when Cu and Sb coexist in the overlay layer as in Patent Literature 1, there is a problem that a Cu—Sb compound is formed in the overlay layer, so that the Cu—Sb compound deteriorates the fatigue resistance. In particular, when the overlay layer is formed on the lining formed of a copper alloy, there is a problem that Cu in the lining is diffused into the overlay layer, so that the generation of a Cu—Sb compound is promoted.The present invention has been made in view of the above problems, and an object thereof is to provide a sliding member that can exhibit good fatigue resistance in an overlay of a Bi alloy containing Sb formed on a lining formed of a copper alloy.In order to achieve the above object, the sliding member of the present ...

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Номер записи: 19
11-02-2016 дата публикации

Silver-Bismuth Powder,Conductive Paste and Conductive Film

Номер: US20160040271A1
Автор: Akihiro Asano, Atsushi Ebara, Hideyuki Fujimoto, Kenichi Inoue, Kozo Ogi, Takahiro Yamada
Принадлежит: Dowa Electronics Materials Co Ltd

To provide a silver-bismuth powder, which includes: silver; and bismuth, wherein a mass ratio (silver:bismuth) of the silver to the bismuth is 95:5 to 40:60, wherein a cumulative 50% point of particle diameter (D50) of the silver-bismuth powder in a volume-based particle size distribution thereof as measured by a laser diffraction particle size distribution analysis is 0.1 μm to 10 μm, and wherein an oxygen content of the silver-bismuth powder is 5.5% by mass or less.

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Номер записи: 20
15-05-2014 дата публикации

Ecological ammunition

Номер: US20140130698A1
Автор: Aito Rey Bonet, Gabriel Angel Fernandez Diaz-Carralero, Isabel Maria Lasanta Carrasco, Javier Francisco Perez Trujillo, Marta Tejero Garcia, Pilar Maria Hierro De Bengoa
Принадлежит: REAL FEDERACION ESPANOLA DE CAZA

The present invention relates to a composite material for the production of ecological ammunition characterized in that it comprises a) a metal matrix formed by a zinc and bismuth alloy, zinc and aluminum alloy, tin and bismuth alloy or zinc and tin alloy and a metal selected from aluminum, bismuth and the combination thereof and b) reinforcing metal particles distributed therein selected from wolframium, ferro-wolframium, ferro-wolframium carbides, wolframium carbides, wolframium oxides and ferro-wolframium oxides, subjected to oxidation before being added to the metal matrix.

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Номер записи: 21
05-03-2015 дата публикации

METAL DEPOSITION USING ORGANIC VAPOR PHASE DEPOSITION (VPD) SYSTEM

Номер: US20150064483A1
Автор: Navarro Francisco F., Thompson Mark E.
Принадлежит:

A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film. 1. A method of depositing a film of a metallic material having a volatilization temperature higher than 350° C. from a source material , comprising:providing the source material in a vacuum deposition processing chamber, the vacuum deposition processing chamber having an internal pressure;providing a substrate in the vacuum deposition processing chamber, the substrate being maintained at a substrate temperature that is lower than the volatilization temperature and being spaced apart from, but in fluid communication with, said source material;reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals;volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; andtransporting said volatilized metal to said substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms said film.2. The ...

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Номер записи: 22
17-03-2016 дата публикации

Lead-Free Solder Alloy

Номер: US20160074971A1
Автор: NOMURA Hikaru, Tachibana Ken
Принадлежит: SENJU METAL INDUSTRY CO., LTD.

Disclosed is a Sn—Bi—Cu—Ni series lead-free solder alloy which has a low melting point, good ductility and high tensile strength, suppresses strain in the substrate by suppressing generation of P-rich layer on a joining interface to have high shear strength and is superior in joining reliability. In order to suppress diffusion of Cu and Ni in an electrode and to maintain elongation and wettability of the solder alloy, a solder alloy has an alloy composition containing 31 to 59 mass % of Bi, 0.3 to 1.0 mass % of Cu, 0.01 to 0.06 mass % of Ni and balance of Sn. 1. A lead-free solder alloy having an alloy composition which contains 31 to 59 mass % of Bi , 0.3 to 1.0 mass % of Cu , 0.01 to 0.06 mass % of Ni and balance of Sn wherein the solder alloy has a melting point of 185 degrees C. or less , a tensile strength of 70 MPa or more and elongation of 65% or more.2. The lead-free solder alloy according to claim 1 , further containing at least one element selected from a group consisting of P and Ge in a total of 0.003 to 0.05 mass %.3. A solder joint formed on a Cu electrode having a Ni plating layer by using the lead-free solder alloy according to .4. The solder joint according to wherein the Ni plating layer includes an electroless plating layer containing P.5. A substrate having a thickness of 5 mm or less and plural Cu electrodes each having Ni plating layer wherein each of the Cu electrodes includes a solder joint formed by using the lead-free solder alloy according to .6. The substrate according to wherein the Ni plating layer contains P.7. A solder joint formed on a Cu electrode having a Ni plating layer by using the lead-free solder alloy according to .8. The solder joint according to wherein the Ni plating layer includes an electroless plating layer containing P.9. A substrate having a thickness of 5 mm or less and plural Cu electrodes each having Ni plating layer wherein each of the Cu electrodes includes a solder joint formed by using the lead-free solder ...

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Номер записи: 23
11-03-2021 дата публикации

THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION MODULE, AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MATERIAL

Номер: US20210074898A1
Автор: MATSUDA Michiko, Shimada Takeshi, Wang Nan
Принадлежит: HITACHI METALS, LTD.

A thermoelectric conversion material having a high dimensionless figure of merit ZT includes: a large number of polycrystalline grains which include a skutterudite-type crystal structure containing Yb, Co, and Sb; and an intergranular layer which is between the neighboring polycrystalline grains and includes crystals in which an atomic ratio of O to Yb is more than 0.4 and less than 1.5. A method for manufacturing a thermoelectric conversion material includes: a weighing step; a mixing step; a ribbon preparation step by rapidly cooling and solidifying a melt of the raw materials by using a rapid liquid cooling solidifying method; a first heat treatment step including heat treating in an inert atmosphere with an adjusted oxygen concentration; a second heat treatment step including heat treating in a reducing atmosphere; and manufacturing the thermoelectric conversion material by a pressure sintering step in an inert atmosphere. 1. A first thermoelectric conversion material comprising:(a) a large number of polycrystalline grains including a skutterudite-type crystal structure containing Yb, Co, and Sb; and(b) an intergranular layer which is between the neighboring polycrystalline grains and includes crystals having an atomic ratio of O to Yb of more than 0.4 and less than 1.5.2. The first thermoelectric conversion material according to claim 1 , wherein the skutterudite-type crystal structure containing Yb claim 1 , Co claim 1 , and Sb is represented by a composition formula YbCoSb(where x is more than 0 and 0.3 or less).3. The first thermoelectric conversion material according to claim 1 , wherein the first thermoelectric conversion material has an oxygen concentration of 1200 volume ppm or less.4. The first thermoelectric conversion material according to claim 1 , wherein the intergranular layer has a thickness of 5 nm or more and 1 μm or less.5. The first thermoelectric conversion material according to claim 1 , wherein the first thermoelectric conversion material ...

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Номер записи: 24
24-03-2022 дата публикации

SOLDER ALLOY, SOLDER PASTE, SOLDER BALL, SOLDER PREFORM, SOLDER JOINT, AND SUBSTRATE

Номер: US20220088723A1
Автор: KAWAMATA Yuji, KAWASAKI Hiroyoshi, SHIRATORI Masato
Принадлежит:

An object of the present invention is to provide an Sn—Bi—Cu—Ni solder alloy or the like which has a low melting point, excellent ductility, and high tensile strength, and in which if soldering is performed on a Cu electrode subjected to electroless Ni plating treatment, a solder joint formed through this soldering exhibits high shear strength. In addition, another object of the present invention is to provide an Sn—Bi—Cu—Ni solder alloy in which a solder joint formed through soldering exhibits high shear strength even for a Cu electrode which has not been subjected to plating treatment. Furthermore, still another object of the present invention is to provide, in addition to the above-described objects, a solder alloy or the like of which yellowish discoloration can be suppressed and in which change in viscosity of a solder paste over time can be suppressed. The solder alloy has an alloy composition consisting of, by mass %, 31% to 59% of Bi, 0.3% to 1.0% of Cu, 0.01% to 0.06% of Ni, 0.0040% to 0.025% of As, and a balance of Sn. 1. A solder alloy having an alloy composition consisting of , by mass % , 31% to 59% of Bi , 0.3% to 1.0% of Cu , 0.01% to 0.06% of Ni , 0.0040% to 0.025% of As , and a balance of Sn , the solder alloy comprising:an As-concentrated layer,wherein the presence of the As-concentrated layer is confirmed by determination criteria as below,{'sub': '2', 'wherein the As-concentrated layer is a region from an outermost surface of the solder alloy to a depth of 2×D1 (nm) in terms of SiO, and'}{'sub': '2', 'claim-text': [ selecting an arbitrary area of 700 μm×300 μm in three samples, each sample having a size 5.0 mm×5.0 mm;', 'performing an XPS analysis in combination with ion sputtering for each of three samples for a total of three analyses,, 'wherein the Determination Criteria comprises, [{'sub': '2', 'S1 is Integrated value of a detection intensity of As in a region from a depth of 0 to 2×D1 (nm) in terms of SiOin a chart of XPS analysis; and'}, {' ...

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Номер записи: 25
05-03-2020 дата публикации

SNBI AND SNIN SOLDER ALLOYS

Номер: US20200070287A1
Автор: LEE NING-CHENG, Mutuku Francis M., ZHANG Hongwen
Принадлежит:

Some implementations of the disclosure are directed to low melting temperature (e.g., liquidus temperature below 210° C.) SnBi or Snln solder alloys. A SnBi solder alloy may consist of 2 to 60 wt % Bi; optionally, one or more of: up to 16 wt % In, up to 4.5 wt % Ag, up to 2 wt % Cu, up to 12 wt % Sb, up to 2.5 wt % Zn, up to 1.5 wt % Ni, up to 1.5 wt % Co, up to 1.5 wt % Ge, up to 1.5 wt % P, and up to 1.5 wt % Mn; and a remainder of Sn. A Snln solder alloy may consist of: 8 to 20 wt % In; optionally, one or more of: up to 12 wt % Bi, up to 4 wt % Ag, up to 5 wt % Sb, up to 3 wt % Cu, up to 2.5 wt % Zn, up to 1.5 wt % Ni, up to 1.5 wt % Co, up to 1.5 wt % Ge, up to 1.5 wt % P, and up to 1.5 wt % Mn; and a remainder of Sn. 1. A solder alloy , consisting of:2 to 60 wt % Bi;optionally, one or more of: up to 16 wt % In, up to 4.5 wt % Ag, up to 2 wt % Cu, up to 12 wt % Sb, up to 2.5 wt % Zn, up to 1.5 wt % Ni, up to 1.5 wt % Co, up to 1.5 wt % Ge, up to 1.5 wt % P, and up to 1.5 wt % Mn; anda remainder of Sn, wherein the solder alloy has a liquidus temperature of less than 210° C.2. The solder alloy of claim 1 , wherein the solder alloy has 2 to 56 wt % Bi and 0.5 to 4.5 wt % Ag.3. The solder alloy of claim 2 , wherein the solder alloy has 2 to 54 wt % Bi; and 1.0 to 4.5 wt % Ag.4. The solder alloy of claim 2 , wherein the solder alloy has: 28 to 56 wt % Bi; and 0.5 to 2.5 wt % Ag.5. The solder alloy of claim 4 , wherein the solder alloy has: greater than 0 to 16 wt % In; greater than 0 to 12 wt % Sb claim 4 , and greater than 40 wt % Sn.6. The solder alloy of claim 1 , wherein the solder alloy consists of:50 to 60 wt % Bi;optionally, one or more of: up to 2 wt % Ag, up to 2 wt % Sb, up to 1 wt % Cu, up to 1.5 wt % In, up to 0.1 wt % Ni, up to 0.2 wt % Co, and up to 0.2 wt % Ge; anda remainder of Sn.7. The solder alloy of claim 6 , wherein the solder alloy has at least one of: up to 2 wt % Ag claim 6 , up to 2 wt % Sb claim 6 , and up to 1 wt % Cu.8. The solder alloy of ...

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Номер записи: 26
15-03-2018 дата публикации

SOLUTION PHASE SYNTHESIS OF HIGHLY PROCESSIBLE NANOCRYSTALLINE LiZnP AND SIMILAR TERNARY SEMICONDUCTORS

Номер: US20180076373A1
Автор: Miller Gordon J., Thompson Michelle JoAnn, Vela-Becerra Javier, White Miles Arthur Burris
Принадлежит: IOWA STATE UNIVERSITY RESEARCH FOUNDATION, INC.

Nowotny-Juza phases offer a wide range of potential applications including solar cell and thermoelectric device fabrication. The disclosure presents a solution phase synthesis of the Nowotny-Juza semiconductors LiZnP, LiCdP, and LiZnSb. These samples are phase pure, crystalline, and exhibit particle sizes of around 20 nm. 1. A method of making a ternary compound , the method comprising the steps of:providing a solution containing a group V element;mixing a compound containing a group I/XI element into the solution containing the group V element to create a mixture containing the group I/XI element and the group V element;injecting a compound containing a group II/XII element into the mixture at an elevated temperature; andreacting the group II/XII element, the group I/XI element, and the group V element of the mixture to form the ternary compound.2. The method of claim 1 , wherein the group I/XI element is lithium.3. The method of claim 2 , wherein the group II/XII element is zinc.4. The method of claim 3 , wherein the group V element is phosphorus.5. The method of claim 3 , wherein the group V element is antimony.6. The method of claim 2 , wherein the group II/XII element is cadmium.7. The method of claim 6 , wherein the group V element is phosphorus.8. The method according to claim 1 , wherein the injecting step occurs when the mixture is at a temperature from 21° C. to 200° C.9. The method according to claim 1 , wherein the injecting step occurs when the mixture is at a temperature of 200° C. or higher.10. The method according to claim 1 , wherein the reacting step further comprises the step of heating the mixture to a temperature from 240° C. to 300° C.11. The method according to claim 1 , wherein the reacting step further comprises the step of heating the mixture to a temperature of 300° C. or higher.12. A ternary compound comprising lithium claim 1 , zinc claim 1 , and antimony claim 1 , wherein the ternary compound has a cubic structure.13. The ternary ...

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Номер записи: 27
14-03-2019 дата публикации

Extreme Ultraviolet Absorbing Alloys

Номер: US20190078177A1
Автор: Adelmann Hanns Christoph, Luong Kim Vu, Philipsen Vicky
Принадлежит:

Example embodiments relate to extreme ultraviolet absorbing alloys. One example embodiment includes an alloy. The alloy includes one or more first elements selected from: a first list consisting of: Ag, Ni, Co, and Fe; and a second list consisting of: Ru, Rh, Pd, Os, Ir, and Pt. The alloy also includes one or more second elements selected from: the first list, if the one or more first elements are not selected from the first list; and a third list consisting of Sb and Te. An atomic ratio between the one or more first elements and the one or more second elements is between 1:1 and 1:5 if the one or more second elements are selected from the third list and between 1:1 and 1:19 if the one or more second elements are not selected from the third list. 1. An alloy , comprising: a first list consisting of: Ag, Ni, Co, and Fe; and', 'a second list consisting of: Ru, Rh, Pd, Os, Ir, and Pt; and, 'one or more first elements selected from only one of the first list, if the one or more first elements are not selected from the first list; and', 'a third list consisting of Sb and Te,, 'one or more second elements selected from only one ofwherein an atomic ratio between the one or more first elements and the one or more second elements is between 1:1 and 1:5 if the one or more second elements are selected from the third list and between 1:1 and 1:19 if the one or more second elements are not selected from the third list.2. The alloy according to claim 1 , wherein an average crystallite size of the alloy is 10 nm or smaller.3. The alloy according to claim 1 , wherein an extinction coefficient of the alloy measured at 13.5 nm is 0.02 or higher.4. The alloy according to claim 1 , wherein a refractive index of the alloy measured at 13.5 nm is between 0.86 and 1.02.5. The alloy according to claim 1 , wherein a crystallization temperature of the alloy is 150° C. or higher.6. The alloy according to claim 1 , wherein a melting temperature of the alloy is 150° C. or higher.7. The alloy ...

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Номер записи: 28
29-03-2018 дата публикации

SINTERED COMPACT TARGET AND METHOD OF PRODUCING SINTERED COMPACT

Номер: US20180085828A1
Автор: FUKUYO Hideaki, Takahashi Hideyuki, Yahagi Masataka, Yamakoshi Yasuhiro
Принадлежит:

A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μmof the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles. 1. A sintered compact target comprising compositional constituents (A) and (B) , where (A) represents one or more chalcogenide elements selected from the group consisting of S , Se , and Te , and (B) represents one or more elements selected from the group consisting of Bi , Sb , As , P , and N , wherein the sintered compact target is free from pores having an average diameter of 1 μm or more , and the number of micropores having an average diameter of 0.1 to 1 μm existing in an area of 40000 μmof the target surface at random check is 100 micropores or less , and wherein the sintered compact target has a purity , excluding gas components , of 99.99% (4N) or higher , an oxygen content as a gas component of 2000 ppm or less , and an average crystal grain size of 50 μg or less.2. The sintered compact target according to claim 1 , wherein the sintered compact has an alloy system selected from the group consisting of Ge—Sb—Te claim 1 , Ag—In—Sb—Te claim 1 , and Ge—In—Sb—Te.3. The sintered compact target according to claim 1 , wherein the sintered compact target has a structure having a deflecting strength of 40 MPa or more claim 1 , a relative density of 99.8% or higher claim 1 , a standard deviation of less than 1% for the relative density claim 1 , and a variation in the ...

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Номер записи: 29
29-03-2018 дата публикации

P-TYPE SKUTTERUDITE THERMOELECTRIC MATERIAL, METHOD FOR PREPARING THE SAME, AND THERMOELECTRIC DEVICE INCLUDING THE SAME

Номер: US20180090656A1
Автор: Kim Jae Hyun, LEE Su Jeong, LEE Ye Seul, MIN Yu Ho, PARK Cheol-Hee
Принадлежит: LG CHEM, LTD.

The present invention relates to a P-type skutterudite thermoelectric material, a method for preparing the same, and a thermoelectric device including the same. More specifically, the present invention relates to a P-type skutterudite thermoelectric material into which a specific filler and charge compensator are introduced, and which exhibits high thermoelectric performance, a method for preparing the same, and a thermoelectric device including the same. 1. A P-type skutterudite thermoelectric material represented by the following Chemical Formula 1:{'br': None, 'sub': x', '4-y', 'y', '12-z', 'z, 'MFeCoSbH\u2003\u2003[Chemical Formula 1]'}wherein, in Chemical Formula 1,M is two or more kinds of elements selected from the group consisting of Ce, La, Sm, Nd, Yb, In, and Ba, [{'br': None, '0 Подробнее

Номер записи: 30
12-04-2018 дата публикации

STABLE NANOCRYSTALLINE ORDERING ALLOY SYSTEMS AND METHODS OF IDENTIFYING SAME

Номер: US20180100817A1
Автор: Murdoch Heather A., Schuh Christopher A.
Принадлежит: Massachusetts Institute of Technology

Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. 144-. (canceled)45. An alloy comprising:a mixture of a solute element and a solvent element, the mixture having a phase including at least one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase,the phase having a first thermodynamic parameter associated with grain boundary segregation of the alloy system, a second thermodynamic parameter associated with phase separation of the alloy system, and a third thermodynamic parameter associated with intermetallic compound formation of the alloy system,wherein the phase is stable when the first thermodynamic parameter, the second thermodynamic parameter, and the third thermodynamic parameter are within a predetermined region of a stability map of the alloy.46. The alloy of claim 45 , wherein an enthalpy of mixing is negative.47. The alloy of claim 45 , wherein the alloy includes an intermetallic compound.48. The alloy of claim 45 , wherein the alloy is an ordered binary alloy comprising at least one of Ag—Sc claim 45 , Ag—La claim 45 , Ag—Y claim 45 , Ba—Pd claim 45 , Ba—Pt claim 45 , Be— ...

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Номер записи: 31
23-04-2015 дата публикации

BORON DOPED MANGANESE ANTIMONIDE AS A USEFUL PERMANENT MAGNET MATERIAL

Номер: US20150110662A1
Автор: Anand Kanika, BUDHANI Ramesh Chandra, DHAR Ajay, Gupta Anurag, Pulikkotil Jiji Thomas Joseph, Singh Nidhi
Принадлежит: COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH

Permanent magnets are used for several important applications, including de electrical motors, wind turbines, hybrid automobile, and for many other applications. Modern widely used rare-earth based permanent magnet materials, such as Sm—Co and Nd—Fe—B, are generally intermetallic alloys made from rare earth elements and transition metals such as cobalt. However, the high costs of rare earth elements make the widespread use of these permanent magnets commercially unattractive. The present work focuses on producing a new permanent magnet material, with good magnetic properties, which is free from rare-earth elements and thus cost-effective. The present invention provides a process to synthesis boron doped manganese antimonide as an alternative to rare earth based permanent magnet materials. The boron doped manganese antimonide disclosed in this invention is free from rare-earth element with good magnetic properties. The material in the present study has been synthesized employing sequential combination of high energy ball milling, arc melting under argon atmosphere and again high energy ball milling followed by annealing. The annealed boron doped manganese antimonide shows improved magnetic properties as compared to manganese antimonide. 1. Boron doped manganese antimonide as a permanent magnet material comprising 46.5-47 wt. % of Manganese (Mn) , 51.5-52 wt. % of antimony (Sb) and Boron (B) doping in the range 1.0-1.8 wt. %.2. A process for the preparation of Boron doped manganese antimonide comprising the steps of:i. mixing Mn powder, Sb powder and B powder in the ratio ranging between 46.5:51.7:1.8 to 47.0:52.0:1.0 and then milling in high energy planetary ball mill with 2 to 4 wt. % of process control agent in an inert atmosphere of argon gas to obtain homogeneously blended powders of Mn, Sb and B;ii. compacting blended powders of Mn, Sb and B as obtained in step (i) at a pressure of 0.1 to 0.5 MPa to obtain compacted pellets;{'sub': '2', 'iii. arc melteing the ...

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Номер записи: 32
20-04-2017 дата публикации

PLATED STEEL SHEET

Номер: US20170107625A1
Автор: Kurosaki Masao, YAMAGUCHI Shinichi
Принадлежит: NIPPON STEEL & SUMITOMO METAL CORPORATION

A plated steel sheet () includes: a steel sheet (); a pre-plating layer () on at least one surface of the steel sheet (), the pre-plating layer () containing Al, Cu, In, Zn, Sn, or Sb, or any combination thereof; and a plating layer () of a Zn—Ni alloy on the pre-plating layer (), a Ni content of the Zn—Ni alloy being 5 mass % to 15 mass %. A coating weight of the pre-plating layer () is 0.5 g/mor more, and a coating weight of the plating layer () is 5 g/mor more. 1. A plated steel sheet , comprising:a steel sheet;a pre-plating layer on at least one surface of the steel sheet, the pre-plating layer containing Al, Cu, In, Zn, Sn, or Sb, or any combination thereof; anda plating layer of a Zn—Ni alloy on the pre-plating layer, a Ni content of the Zn—Ni alloy being 5 mass % to 15 mass %, wherein{'sup': '2', 'a coating weight of the pre-plating layer is 0.5 g/mor more, and'}{'sup': '2', 'a coating weight of the plating layer is 5 g/mor more.'}2. The plated steel sheet according to claim 1 , further comprising a chromate-free film of 10 mg/mor more on the plating layer.3. The plated steel sheet according to claim 2 , wherein the chromate-free film contains a fluoro compound of hexafluorotitanic acid or hexafluorozirconic acid or both of them claim 2 , phosphoric acid claim 2 , and a vanadium compound.4. The plated steel sheet according to claim 2 , wherein the chromate-free film is formed by using a treatment solution containing a salt of Zr or Ti or both of them claim 2 , or a treatment solution containing a silane coupling agent.5. The plated steel sheet according to claim 4 , wherein the treatment solution containing the silane coupling agent contains a first silane coupling agent containing a single amino group in a molecule and a second silane coupling agent containing a single glycidyl group in a molecule. The present invention relates to a plated steel sheet provided with a Zn—Ni alloy plating layer.A steel sheet used for fuel tanks of an automobile, a motorcycle, ...

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Номер записи: 33
26-04-2018 дата публикации

SYSTEMS AND METHODS OF FABRICATION AND USE OF NbFeSb P-TYPE HALF-HEUSLER THERMOELECTRIC MATERIALS

Номер: US20180114889A1
Автор: He Ran, Ren Zhifeng
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

Discussed herein are half-Heusler thermoelectric materials including niobium, iron, antimony, and titanium that are formed by ball-milling and hot-pressing the ball-milled power to obtain various thermoelectric properties and an average grain size above 1 μm. 1. A method of fabricating a thermoelectric component , comprising:{'sub': 1-x', 'x, 'forming, an ingot of a first alloy comprising niobium, iron, antimony, and titanium according to a formula NbTiFeSb;'}ball-milling the ingot to form a ball-milled powder;{'sup': −1', '−2, 'hot-pressing the ball-milled powder between 1100 K and 1400 K to form a thermoelectric component comprising a power factor above about 60 μW cmKfrom about 300K to about 775K.'}2. The method of claim 1 , wherein x is from about 0.02 to about 0.7.3. The method of claim 1 , further comprising: subsequent to forming an ingot claim 1 , melting the ingot at least once and reforming the ingot via a second melting.4. The method of claim 1 , further comprising ball-milling the ingot from 10 minutes to 70 hours.5. The method of claim 1 , further comprising hot-pressing the ball-milled powder to form a plurality of grains of an average grain size from about 0.25 μm to about 14 μm.6. The method of claim 1 , further comprising hot-pressing the ball-milled powder to form a plurality of grains of an average grain size above about 1.0 μm.7. The method of claim 1 , further comprising hot-pressing the ball-milled powder to form the thermoelectric component with a ZT above 0.6 above about 650 K.8. A thermoelectric device comprising:{'sub': 1-x', 'x, 'sup': −1', '−2, 'a hot-pressed component of ball-milled powder according to a formula NbTiFeSb, wherein the component comprises a power factor above about 60 μW cmKfrom about 300 K to about 775 K and an average grain size above 1 μm.'}9. The device of claim 8 , wherein x is from 0.02-0.7.10. The device of claim 8 , wherein the power factor of the component is above about 80 μW cmKfrom about 300 K to about 500 K.11 ...

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Номер записи: 34
05-05-2016 дата публикации

REACTIVE POWDER, BONDING MATERIAL USING REACTIVE POWDER, BONDED BODY BONDED WITH BONDING MATERIAL AND METHOD FOR PRODUCING BONDED BODY

Номер: US20160121395A1
Автор: HIROSE Akio, KAWANAKA Hirotsugu, OGURA Tomo, TAGUCHI Masami
Принадлежит: Hitachi, Ltd.

There is provided a reactive powder enabling a satisfactory and stable self-propagating high temperature synthesis (SHS) reaction. Also, there is provided a bonding material enabling reliable bonding, by using the reactive powder, while inhibiting thermal degradation of a joint member without depending on a surface shape to be bonded of the joint member. The reactive powder is a reactive powder enabling self-propagating high temperature synthesis including a first material and a second material that chemically react with each other, in which each grain constituting the reactive powder is in a state that first sub-grains made of the first material and second sub-grains made of the second material are disorderly mixed within the grain. 1. A reactive powder enabling self-propagating high temperature synthesis , comprising: a first material and a second material that chemically react with each other ,wherein each grain constituting the reactive powder is in a state that first sub-grains made of the first material and second sub-grains made of the second material are disorderly mixed within the grain.2. The reactive powder according to claim 1 , wherein:the first sub-grain and the second sub-grain each has a scaly shape and an average thickness of the scaly shape is 10 nm or more and 1 μm or less.3. The reactive powder according to claim 1 , wherein:the reactive powder has an average grain size of 3 μm or more and 40 μm or less.4. The reactive powder according to claim 1 , wherein:the reactive powder is obtained by intermixing and grinding powder of the first material and powder of the second material.5. A bonding material to bond two or more members to be bonded claim 1 , comprising: the reactive powder according to ; andan easy-flowing material fluidized at a temperature lower than a melting point of the members to be bonded.6. The bonding material according to claim 5 , wherein:the reactive powder and powder of the easy-flowing material are intermixed within the ...

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Номер записи: 35
07-05-2015 дата публикации

STABLE BINARY NANOCRYSTALLINE ALLOYS AND METHODS OF IDENTIFYING SAME

Номер: US20150125338A1
Автор: Murdoch Heather, Schuh Christopher A.
Принадлежит:

Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. 1. A method of identifying a stable phase of a binary alloy comprising a solute element and a solvent element , the method comprising:(A) determining at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy; and(B) identifying the stable phase of the binary alloy based on the first thermodynamic parameter and the second thermodynamic parameter by comparing the first thermodynamic parameter and the second thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase;wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.2. The method of claim 1 , wherein (A) further comprises at least one of:calculating an enthalpy of mixing of the binary alloy as a first thermodynamic parameter,calculating an enthalpy of segregation of the binary alloy as a second thermodynamic parameter, anddetermining a third thermodynamic parameter that is a free energy of mixing as a function of at least one of (i) concentration of grain boundary in the binary alloy, (ii) grain size of the binary alloy, (iii) concentration of the solute element in the binary alloy, and (iv) concentration of the solvent element in the binary alloy.3. (canceled)4. (canceled)5. The method of claim 1 , wherein the binary alloy has a positive enthalpy of mixing claim 1 , and at least one of the at least two thermodynamic parameters is ...

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Номер записи: 36
02-05-2019 дата публикации

Apparatus for Use in Well Abandonment

Номер: US20190128091A1
Автор: Carragher Paul
Принадлежит: BiSN Tec LTD

A plug for plugging wells, and in particular oil and gas wells, is provided. The plug has a plug body formed from an outer metal tube of a reduced thickness. The plug also has reinforcement means, attached to an inner surface of the outer tube, that give the plug a cross-sectional structural strength that is at least equivalent to that of a thicker metal tube. The plug has a central heater receiving void located along the axis of the plug to enable a plug deployment heater to be received therein. Also provided is a plug assembly with a variable cross-sectional area in a plane perpendicular to the plane in which the assembly is deployed during the plugging of underground conduits. 1. A plug for plugging wells , and in particular oil and gas wells , said plug comprising a plug body formed from an outer metal tube of a reduced thickness; reinforcement means , attached to an inner surface of the outer tube to give the plug a cross-sectional structural strength that is at least equivalent to that of a thicker metal tube; and wherein said plug has a central heater receiving void located along the axis of the plug.2. The plug of claim 1 , wherein the reinforcement means attached to the outer tube comprises corrugated metal.3. The plug of claim 1 , wherein the reinforcement means attached to outer comprises a ‘honeycomb’ metal mesh.4. A plug according to claim 1 , further comprising an inner metal tube connected co-axially with the outer metal tube by way of the reinforcement means claim 1 , which attach to the inner surface of the outer tube and the outer surface of the inner tube at discrete points.5. The plug of claim 4 , wherein the reinforcement means that attach the inner and outer tubes together comprises corrugated metal located in the gap between the inner and outer tubes.6. The plug of claim 4 , wherein the reinforcement means that attach the inner and outer tubes together comprises a ‘honeycomb’ metal mesh located in the gap between the inner and outer tubes. ...

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Номер записи: 37
23-04-2020 дата публикации

SnBiSb Series Low-temperature Lead-free Solder and its Preparation Method

Номер: US20200123634A1
Автор: An Ning, HE Huijun, HU Qiang, LIU Xixue, Sun Yanbin, Wang Lirong, Wang Zhigang, Xu Lei, Zhang Fuwen, ZHANG Huankun, Zhang Jiangsong, Zhang Pin, ZHANG Shaoming, Zhu Jie, Zhu Zhihua
Принадлежит: BEIJING COMPO ADVANCED TECHNOLOGY CO., LTD.

A SnBiSb series low-temperature lead-free solder and a preparation method thereof, which belongs to the technical field of low-temperature soldering. The lead-free solder includes by weight the following composition: 32.8-56.5% of Bi, 0.7-2.2% of Sb, with the remainder being Sn, wherein the weight percentages of Bi and Sb satisfy a relationship of b=0.006a2−0.672a+19.61=c, wherein the symbol a represents the weight percentage of Bi, the symbol b represents the weight percentage of Sb, and the range of c is −1.85≤c≤1.85. The solder alloy has a peritectic or near peritectic structure with a low melting point, and has an excellent mechanical performance and reliability, and applicable to the field of low-temperature soldering. 1. A SnBiSb series low-temperature lead-free solder , comprising: by weight 32.8-56.5% of Bi , 0.7-2.2% of Sb , and Sn , wherein a weight percentage of Bi and a weight percentage of Sb satisfy a relationship of b=0.006a−0.672a+19.61+c , wherein a is the weight percentage of Bi , b is the weight percentage of Sb , and a range of c is −1.85≤c≤1.85.2. The SnBiSb series low-temperature lead-free solder according to claim 1 , wherein the Bi is 41.8-50% by weight and the Sb is 0.7-2.0% by weight.3. The SnBiSb series low-temperature lead-free solder according to claim 1 , wherein the range of c is −1.85≤c≤−0.001 claim 1 , 0.001≤c≤1.85 claim 1 , −1.5≤c≤−0.005 claim 1 , 0.005≤c≤1.5 claim 1 , −1.5≤c≤−0.008 or 0.008≤c≤1.5.4. The SnBiSb series low-temperature lead-free solder according to claim 1 , wherein the SnBiSb series low-temperature lead-free solder further comprises one or more metal elements selected from the group consisting of Ce claim 1 , Ti claim 1 , Cu claim 1 , Ni claim 1 , Ag and In.5. The SnBiSb series low-temperature lead-free solder according to claim 4 , wherein the SnBiSb series low-temperature lead-free solder comprises 0.01-2.5% of Ce by weight claim 4 , 0.05-2.0% of Ti by weight claim 4 , 0.01-0.8% of Cu by weight claim 4 , 0.03-1.5% ...

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Номер записи: 38
23-04-2020 дата публикации

THERMOELECTRIC ALLOY, METHOD FOR PRODUCING THE SAME AND THERMOELECTRIC ALLOY COMPOSITE

Номер: US20200123637A1
Автор: TSAI Yi-Fen, WEI Pai-Chun, WU Hsin-Jay, YEN Wan-Ting
Принадлежит:

The present invention relates to a thermoelectric alloy and a method for producing the same. A starting material is firstly provided, and an oxidation process is performed to the starting material to obtain an oxidized material composition. Then, the oxidized material composition and a carburizing agent are added into a quartz tube, and a sealing process is performed to the quartz tube. And then, the sealed quartz tube is subjected to a carburization process, thereby obtaining the thermoelectric alloy with excellent thermoelectric figure-of-merit.

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Номер записи: 39
21-05-2015 дата публикации

Layer For An Electrical Contact Element, Layer System And Method For Producing A Layer

Номер: US20150140357A1
Автор: Schmidt Helge, Thoss Stefan
Принадлежит: Tyco Electronics AMP GMBH

A contact layer for an electrical contact is disclosed having bismuth and being tin-free. 1. A contact layer for an electrical contact , comprising bismuth and being tin-free.2. The contact layer of claim 1 , wherein the bismuth is 10% by weight.3. The contact layer of claim 1 , wherein the bismuth is 50% or more by weight.4. The contact layer of claim 1 , wherein the bismuth is 90% or more by weight.5. The contact layer of claim 1 , wherein the bismuth is substantially pure.6. The contact layer of claim 1 , wherein the composition further comprises lead claim 1 , zinc claim 1 , indium claim 1 , antimony claim 1 , copper claim 1 , nickel claim 1 , silver claim 1 , gold claim 1 , palladium claim 1 , ruthenium claim 1 , are any combination thereof.7. The contact layer of claim 1 , wherein bismuth is the principle component.8. The contact layer of claim 1 , wherein the composition is positioned directly on a copper substrate.9. The contact layer of claim 1 , wherein the contact layer is positioned directly on a nickel-coated claim 1 , copper substrate.10. A method for producing a contact layer claim 1 , comprising the steps of:electroplating a layer of bismuth that is tin-free.11. The method for producing a contact layer of claim 10 , wherein the layer of bismuth is electroplated directly to a copper layer.12. The method for producing a contact layer of claim 10 , wherein the layer of bismuth is electroplated directly to a nickel layer disposed over the copper layer.13. The method for producing a contact layer of claim 10 , wherein the bismuth layer is a contact layer electroplated along an insertion region of a plug type connector contact.14. The method for producing a contact layer of claim 10 , wherein the bismuth layer is a contact layer electroplated along a connection region of a plug type connector contact.15. The method for producing a contact layer of claim 10 , wherein the bismuth layer is a contact layer electroplated along a pressing region of a plug type ...

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Номер записи: 40
03-06-2021 дата публикации

Methods, apparatus and systems for creating wellbore plugs for abandoned wells

Номер: US20210164322A1
Автор: Albert Perez, Jr., Hua Zhang, Quincy K. Elias, Terizhandur S. Ramakrishnan
Принадлежит: Schlumberger Technology Corp

A wellbore is plugged using a bismuth alloy. The wellbore is arranged so that a liquid bismuth alloy sets with an excess pressure of the plug relative to the borehole fluid pressure along a desired seal height distance.

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Номер записи: 41
18-05-2017 дата публикации

High Impact Solder Toughness Alloy

Номер: US20170136583A1
Автор: Chattopadhyay Kamanio, Chegudi Sujatha, de Avila Ribas Morgana, Kumar Anil K. N., Lodge Dominic, Pandher Ranjit, Sarkar Siuli, Singh Bawa
Принадлежит:

A lead-free solder alloy comprising 35-59 wt % Bi, Mn in a concentration up to 1.0 wt %, Cu in a concentration of up to 1 wt %, and balance Sn, together with any unavoidable impurities. Some embodiments also contain up to about 1 wt % Ag. 120-. (canceled)21. A lead-free solder alloy comprising:from 35 to 59% wt Bi;Cu in a concentration up to 1.0 wt %;Mn in a concentration up to 0.2 wt %;Ag in a concentration up to 1.0 wt %;balance Sn; andunavoidable impurities.22. The alloy of consisting essentially of:from 35 to 59% wt Bi;Cu in a concentration up to 1.0 wt %;Mn in a concentration up to 0.2 wt %;Ag in a concentration up to 1.0 wt %;balance Sn; andunavoidable impurities.23. The alloy of consisting of:from 35 to 59% wt Bi;Cu in a concentration up to 1.0 wt %;Mn in a concentration up to 0.2 wt %;Ag in a concentration up to 1.0 wt %;balance Sn; andunavoidable impurities.24. The alloy of wherein the Cu is present in a concentration of at least 0.1 wt %.25. The alloy of wherein the Cu is present in a concentration of at least 0.1 wt %.26. The alloy of wherein the Cu is present in a concentration of at least 0.1 wt %.27. The alloy of claim 21 , wherein the Bi is present in a concentration of 35 to 50 wt %.28. The alloy of wherein the Bi is present in a concentration of 35 to 50 wt %.29. The alloy of wherein the Bi is present in a concentration of 35 to 50 wt %.30. The alloy of wherein the Bi is present in a concentration of 57 to 59 wt %. This application is a continuation application based on U.S. Ser. No. 14/236,432, which is a national stage application based on PCT/GB2012/051874 filed Aug. 2, 2012, claiming priority to U.S. provisional Ser. No. 61/514,303 filed Aug. 2, 2011, the entire disclosures of which are incorporated herein by reference.The present invention relates to an alloy, in particular to a lead-free solder alloy.A number of lead-free solder alloys are known, which provide non-toxic alternatives to the most widely used solder alloy—eutectic—37% Pb-63% Sn ...

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Номер записи: 42
14-08-2014 дата публикации

Thermoelectric conversion element and method of producing the same

Номер: US20140224297A1
Автор: Naoyuki Hayashi, Toshiaki Aoai, Yoshinori Hotta
Принадлежит: Fujifilm Corp

A thermoelectric conversion element formed by laminating, on a substrate having a porous anodic oxidation film of aluminum, a thermoelectric conversion layer which contains an inorganic oxide semiconductor or an element having a melting point of 300° C. or higher, as a main component, and which has a void structure; and a method of producing the same.

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Номер записи: 43
18-05-2017 дата публикации

METHOD FOR MANUFACTURING AN SnSb INTERMETALLIC PHASE

Номер: US20170141388A1
Автор: Antitomaso Philippe, Ayme-Perrot David, GIRARD Philippe, Monconduit Laure, Morato-Lallemand Francoise, Sonntag Philippe
Принадлежит:

Method for preparing an intermetallic material SnSb, said method comprising at least the following steps: 1. Method for preparing an SnSb intermetallic phase , said method comprising at least the following steps:a/mixing the precursors Sn and Sb,b/treating the mixture from step a/with microwaves.2. Method according to claim 1 , wherein the precursors Sn and Sb are used in a molar proportion selected from 30/70 claim 1 , 40/60 claim 1 , 50/50 claim 1 , 60/40 claim 1 , and 70/30.3. Method according to claim 1 , wherein the duration of step b/is greater than or equal to 60 s.4. Method according to claim 1 , wherein the precursors Sn and Sb are in contact with a susceptor material claim 1 , for carrying out the treatment of step b/with microwaves.5. Method according to claim 4 , wherein the specific energy of the treatment carried out in step b/is greater than or equal to 24 000 J per g of susceptor.6. Method according to claim 5 , wherein the specific energy of the treatment carried out in step b/is greater than or equal to 30 000 J per g of susceptor.7. Method according to claim 4 , wherein the susceptor material is a solid.8. Method according to claim 7 , wherein the susceptor material is selected from carbon and CuO.9. Method according to claim 8 , wherein the susceptor material is carbon and the duration t of microwave treatment is from 90 s to 150 s.10. Method according to claim 8 , wherein the susceptor material is CuO and the duration t of microwave treatment is from 300 s to 600 s.11. Method according to claim 4 , wherein claim 4 , with mdenoting the total weight of the metallic precursors Sn and Sb claim 4 , and mdenoting the weight of susceptor claim 4 , these weights satisfy the relation:{'sub': (MP)', '(S)', '(MP), '0.1 m≦m≦3000 m'}12. Method according to claim 1 , wherein the precursors Sn and Sb are used in solid form.13. Method according to claim 12 , wherein the precursors Sn and Sb are used in the form of powder or pellets.14. Method according to claim ...

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Номер записи: 44
24-05-2018 дата публикации

Cutting elements having accelerated leaching rates and methods of making the same

Номер: US20180142522A1
Автор: Abhijit SURYAVANSHI, Andrew Gledhill, Christopher Long, Kai Zhang, Valeriy KONOVALOV
Принадлежит: Diamond Innovations Inc

Cutting elements having accelerated leaching rates and methods of making the same are disclosed herein. In one embodiment, a method of forming a cutting element includes assembling a reaction cell having diamond particles, a non-catalyst material, a catalyst material, and a substrate within a refractory metal container, where the non-catalyst material is generally immiscible in the catalyst material at a sintering temperature and pressure. The method also includes subjecting the reaction cell and its contents to a high pressure high temperature sintering process to form a polycrystalline diamond body that is attached to the substrate. The method further includes contacting at least a portion of the polycrystalline diamond body with a leaching agent to remove catalyst material and non-catalyst material from the diamond body, where a leaching rate of the catalyst material and the non-catalyst material exceeds a conventional leaching rate profile by at least about 30%.

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Номер записи: 45
07-05-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200139440A1
Автор: Cheng Xin, FU Fan, Liang Tao, SU Xianli, TANG Xinfeng, YANG Dongwang, ZHANG QIANG, ZHANG Qingjie, Zheng Gang
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 115-. (canceled)16. A method of preparing a thermoelectric material , comprising:1) weighing powders of reactants according to an appropriate stoichiometric ratio, mixing the powders in an agate mortar, and cold-pressing the powders into a pellet;{'sup': '−3', '2) sealing the pellet in a silica tube under a pressure of 10Pa, initiating a self-propagating high temperature synthesis (SHS) by point-heating a portion of the pellet wherein, once the SHS starts, a wave of exothermic reactions passes through the remaining portion of the pellet, cooling down the pellet after reaction in air or quenched in salt water to obtain a cooled-down pellet; and'} {'sub': 4-e', 'e', '12-f', 'f', '3, 'wherein the reactants include Co, M, Sb, and Te powders, M is Fe or Ni, the stoichiometric ratio is Co:M:Sb:Te=4−e:e:12−f:f, where 0≤e≤1.0, 0≤f≤1.0, the cooled-down pellet obtained in step (2) contains CoMSbTe; and parameters of the PAS include a reaction temperature of 650° C. with a heating rate of 100° C./min and a pressure of 40 MPa for 8 min, a final product is a CoSbbased thermoelectric material.'}, '3) crushing the cooled-down pellet obtained in step 2) into powder, and sintering the powder with plasma activated sintering (PAS) to form a bulk material,'} The present disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with plasma activated sintering (PAS) and a method for preparing the same. More specifically, the present disclosure relates to a new criterion for combustion synthesis and the method for preparing thermoelectric ...

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Номер записи: 46
16-05-2019 дата публикации

ALLOYS AND PROCESSES FOR MAKING AND USING SAME

Номер: US20190144975A1
Автор: Marya Manuel
Принадлежит:

Alloys and processes for making and using same. In some examples, an alloy can include greater than 50 wt % to less than 65 wt % bismuth; greater than 35 wt % to less than 50 wt % tin; about 0.01 wt % to about 2.5 wt % indium; and at least one of: about 0.01 wt % to about 2.5 wt % antimony, about 0.01 wt % to about 0.5 wt % gallium, about 0.01 wt % to about 4 wt % zinc, and about 0.01 wt % to about 2.5 wt % chromium, with all weight percent values based on a total weight of the alloy. In other examples, an alloy can include greater than 50 wt % to less than 65 wt % bismuth; greater than 35 wt % to less than 50 wt % tin; about 0.01 wt % to about 2.5 wt % indium, and less than 1 wt % of lead, with all weight percent values based on a total weight of the alloy. 1. An alloy , comprising:greater than 50 wt % to less than 65 wt % bismuth;greater than 35 wt % to less than 50 wt % tin;about 0.01 wt % to about 2.5 wt % indium; and about 0.01 wt % to about 2.5 wt % antimony,', 'about 0.01 wt % to about 0.5 wt % gallium,', 'about 0.01 wt % to about 4 wt % zinc, and', 'about 0.01 wt % to about 2.5 wt % chromium,, 'at least one ofwherein all weight percent values are based on a total weight of the alloy.2. The alloy of claim 1 , further comprising at least one of:about 0.01 wt % to about 3 wt % copper, andabout 0.01 wt % to about 1 wt % nickel, based on the total weight of the alloy.3. The alloy of claim 1 , wherein the alloy comprises about 1.5 wt % to about 6.5 wt % of a combined amount of antimony claim 1 , gallium claim 1 , zinc claim 1 , and chromium claim 1 , based on the total weight of the alloy.4. The alloy of claim 1 , wherein the alloy comprises at least 90 wt % of a combined amount of bismuth and tin claim 1 , based on the total weight of the alloy.5. The alloy of claim 1 , wherein the alloy comprises about 0.1 wt % to about 0.5 wt % gallium claim 1 , about 0.1 wt % to about 2 wt % zinc claim 1 , and about 0.1 wt % to about 1.5 wt % chromium claim 1 , based on the ...

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Номер записи: 47
01-06-2017 дата публикации

Imprinting Metallic Substrates at Hot Working Temperatures

Номер: US20170151598A1
Автор: CHONG Karen, LI Xue, Loke Yee Chong, MSM Saifullah
Принадлежит: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

The present invention relates to a method of forming an imprint on a metal substrate. The method comprises a step of providing a mold having a defined imprint surface pattern in the nano-sized or micro-sized range and a step of pressing the metal substrate against the mold at hot-working temperature to form a nano-sized or micro-sized imprint thereon. 1. A method for making an imprint on a metal substrate comprising the steps of:(a) providing a mold having a defined imprint surface pattern in the nano-sized or micro-sized range; and{'sub': m', 'm, '(b) pressing the metal substrate against the mold at hot working temperature to form a nano-sized or micro-sized imprint thereon, wherein the hot working temperature, in degrees Celsius (° C.), is greater than 0.5 T, wherein the Tis the melting point of the metal substrate in absolute temperature scale.'}2. The method of claim 1 , wherein the method does not comprise the use of a sacrificial material.3. The method of claim 2 , wherein the sacrificial material may be selected from the group consisting of binder claim 2 , resist claim 2 , protective films and any combination thereof.4. The method of claim 1 , wherein the metal substrate comprises a metal or metal alloy.5. The method of claim 4 , wherein the metal is selected from the group consisting of gallium claim 4 , indium claim 4 , tin claim 4 , bismuth claim 4 , cadmium claim 4 , lead claim 4 , zinc claim 4 , silver claim 4 , antimony claim 4 , iron claim 4 , nickel claim 4 , cobalt claim 4 , titanium claim 4 , aluminium claim 4 , magnesium and any mixture thereof.6. (canceled)7. The method of claim 5 , wherein the metal alloy comprises 40 to 50 wt % bismuth claim 5 , 20 to 30 wt % lead claim 5 , 5 to 15 wt % tin claim 5 , 0 to 12 wt % cadmium and 0 to 25 wt % indium claim 5 , wherein the total wt % of bismuth claim 5 , lead claim 5 , tin claim 5 , cadmium and indium combined is 100 wt %.8. The method of claim 1 , wherein the metal substrate is supported on a silicon ...

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Номер записи: 48
09-06-2016 дата публикации

Solder Paste

Номер: US20160158896A1
Автор: HIRAI Naoko, Itoyama Taro, KOMURO Hideyuki, Koroki Motoki, Okada Sakie, SHIMIZU Keitaro, Yoshikawa Shunsaku
Принадлежит: SENJU METAL INDUSTRY CO., LTD.

A solder paste whereby metal does not flow out of a joint during a second or subsequent reflow heating stage. The solder paste excels in terms of temporal stability and exhibits high joint strength at room temperature and at high temperatures. The solder paste comprises a powdered metal component and a flux component, the powdered metal component comprising the following: 10-70 mass % of a powdered intermetallic compound comprising copper and tin and 30-90 mass % of a solder powder including tin as a main component. Neither the powdered intermetallic compound nor the solder powder contains a copper-only phase, inhibiting the elution of copper ions into the flux. 19.-. (canceled)10. A solder-joint-forming solder paste which is used for soldering of a substrate in which multiple surfaces on which a conductor is wired are laminated and which comprises an intermetallic compound powder comprising Cu and Sn; a Sn—Bi solder powder containing , as a main component , Sn; and a flux component , wherein the solder paste comprises 10 to 65% by mass of the intermetallic compound powder containing Cu and Sn and 30 to 90% by mass of the solder powder containing , as a main component , Sn , and a network structure of a second intermetallic compound newly formed by a reaction of the intermetallic compound powder containing Cu and Sn with the Sn in the solder powder containing , as a main component , Sn is formed within the intermetallic compound powder containing Cu and Sn.11. The solder paste according to claim 10 , wherein the at least one of the intermetallic compound powder and the solder powder has an average particle size of 50 μm or less.12. The solder paste according to claim 10 , wherein the solder powder has an Sn content of 40 to 100% by mass(excluding 100% by mass of Sn).13. The solder paste according to claim 11 , wherein the solder powder has an Sn content of 40 to 100% by mass(excluding 100% by mass of Sn).14. The solder paste according to claim 10 , wherein the ...

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Номер записи: 49
09-06-2016 дата публикации

Solder Paste

Номер: US20160158897A1
Автор: Hideyuki Komuro, Keitaro Shimizu, Motoki KOROKI, Naoko Hirai, Sakie OKADA, Shunsaku Yoshikawa, Taro ITOYAMA
Принадлежит: Senju Metal Industry Co Ltd

A solder paste whereby metal does not flow out of a joint during a second or subsequent reflow heating stage. The solder paste exhibits high joint strength at room temperature and at high temperatures, excels in terms of temporal stability, exhibits minimal void formation, and can form highly cohesive joints. The solder paste comprises a powdered metal component and a flux component, the powdered metal component comprising: a powdered intermetallic compound that comprises copper and tin and has metal barrier layers covering the surfaces thereof and a solder powder including tin as a main component. Neither the powdered intermetallic compound nor the solder powder contains a copper-only phase, inhibiting the elution of copper ions into the flux.

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Номер записи: 50
17-06-2021 дата публикации

Mn-Bi-Sb-BASED MAGNETIC SUBSTANCE AND METHOD OF MANUFACTURING THE SAME

Номер: US20210183547A1
Автор: Jin Hyeok Cha, Jong Ryoul KIM, Min Kyu KANG, Tae Gyu Lee
Принадлежит: Hyundai Motor Co, Industry University Cooperation Foundation IUCF HYU, Kia Motors Corp

Disclosed are a Mn—Bi—Sb-based magnetic substance and a method of manufacturing the same. Particularly, the Mn—Bi—Sb-based magnetic substance includes Mn and Bi forming a hexagonal crystal structure, and a portion of Bi elements forming the crystal structure is substituted with Sb so as to improve the magnetic properties thereof.

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Номер записи: 51
09-06-2016 дата публикации

Method of producing low alpha-ray emitting bismuth, and low alpha-ray emitting bismuth

Номер: US20160160368A1
Автор: Yu Hosokawa
Принадлежит: JX Nippon Mining and Metals Corp

Provided is low alpha-ray emitting bismuth having an alpha dose of 0.003 cph/cm 2 or less. Additionally provided is a method of producing low alpha-ray emitting bismuth, wherein bismuth having an alpha dose of 0.5 cph/cm 2 or less is used as a raw material, the raw material bismuth is melted in a nitric acid solution via electrolysis to prepare a bismuth nitrate solution having a bismuth concentration of 5 to 50 g/L and a pH of 0.0 to 0.4, the bismuth nitrate solution is passed through a column filled with ion-exchange resin to eliminate polonium contained in the solution by an ion-exchange resin, and bismuth is recovered by means of electrowinning from the solution that was passed through the ion-exchange resin. Recent semiconductor devices are of high density and high capacity, and therefore are subject to increased risk of soft errors caused by the effects of alpha rays emitted from materials in the vicinity of semiconductor chips. In particular, there is a strong demand for higher purification of solder materials used near semiconductor devices, and there is a demand for low alpha-ray emitting materials. Therefore, the present invention aims to elucidate the phenomenon of alpha ray generation from bismuth, and to provide a low alpha-ray emitting, high-purity bismuth that can be applied to the required materials and a production method thereof, as well as to provide an alloy of low alpha-ray emitting bismuth and tin and a production method thereof.

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Номер записи: 52
22-09-2022 дата публикации

Copper alloy sliding material

Номер: US20220298603A1
Автор: Yuhei EBATA
Принадлежит: Taiho Kogyo Co Ltd

[Object] To improve both abrasion resistance and seizure resistance.[Solution] A copper alloy sliding material is configured, which contains 0.5 to 12.0 mass % of Sn, 2.0 to 8.0 mass % of Bi, and 1.0 to 5.0 vol % of an inorganic compound, the balance being Cu and inevitable impurities, wherein the inorganic compound includes a first inorganic compound having an average particle size of 0.5 to 3.0 μm and a second inorganic compound having an average particle size of 4.0 to 20.0 μm, and wherein a value obtained by dividing a volume fraction of the first inorganic compound by a volume fraction of the second inorganic compound is 0.1 to 1.0.

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Номер записи: 53
23-05-2019 дата публикации

ANISOTROPIC COMPLEX SINTERED MAGNET COMPRISING MnBi WHICH HAS IMPROVED MAGNETIC PROPERTIES AND METHOD OF PREPARING THE SAME

Номер: US20190153565A1
Автор: Byun Yangwoo, CHO Sanggeun, Kim Jinbae
Принадлежит: LG ELECTRONICS INC.

The present invention relates to a method of preparing an anisotropic complex sintered magnet having MnBi, that includes: (a) preparing a non-magnetic phase MnBi-based ribbon by a rapidly solidification process (RSP); (b) heat treating the non-magnetic phase MnBi-based ribbon to convert the non-magnetic phase MnBi-based ribbon into a magnetic phase MnBi-based ribbon; (c) grinding the magnetic phase MnBi-based ribbon to form a MnBi hard magnetic phase powder; (d) mixing the MnBi hard magnetic phase powder with a rare-earth hard magnetic phase powder; (e) magnetic field molding the mixture obtained in step (d) by applying an external magnetic field to form a molded article; and (f) sintering the molded article. 1. A method of preparing an anisotropic complex sintered magnet comprising MnBi , the method comprising:(a) preparing a non-magnetic phase MnBi-based ribbon by a rapidly solidification process (RSP);(b) heat treating the non-magnetic phase MnBi-based ribbon to convert the non-magnetic phase MnBi-based ribbon into a magnetic phase MnBi-based ribbon;(c) grinding the magnetic phase MnBi-based ribbon to form a MnBi hard magnetic phase powder;(d) mixing the MnBi hard magnetic phase powder with a rare-earth hard magnetic phase powder;(e) magnetic field molding the mixture obtained in step (d) by applying an external magnetic field to form a molded article; and(f) sintering the molded article.2. The method of claim 1 , wherein the MnBi-based ribbon prepared in step (a) has a crystal grain size of 50 to 100 nm.3. The method of claim 1 , wherein the MnBi-based ribbon is further prepared using a cooling wheel during the rapidly solidification process claim 1 , and wherein the cooling wheel has a circumference speed of 10 to 300 m/s.4. The method of claim 1 , wherein the MnBi-based ribbon in step (a) is represented by MnxBi100-x claim 1 , where X is 50 to 55.5. The method of claim 1 , wherein the heat treating of step (b) is performed at a temperature of 280 to 340° C.6. ...

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Номер записи: 54
16-06-2016 дата публикации

ANISOTROPIC COMPLEX SINTERED MAGNET COMPRISING MnBi WHICH HAS IMPROVED MAGNETIC PROPERTIES AND METHOD OF PREPARING THE SAME

Номер: US20160168660A1
Автор: Byun Yangwoo, CHO Sanggeun, Kim Jinbae
Принадлежит: LG ELECTRONICS INC.

The present invention relates to a method of preparing an anisotropic complex sintered magnet having MnBi, that includes: (a) preparing a non-magnetic phase MnBi-based ribbon by a rapidly solidification process (RSP); (b) heat treating the non-magnetic phase MnBi-based ribbon to convert the non-magnetic phase MnBi-based ribbon into a magnetic phase MnBi-based ribbon; (c) grinding the magnetic phase MnBi-based ribbon to form a MnBi hard magnetic phase powder; (d) mixing the MnBi hard magnetic phase powder with a rare-earth hard magnetic phase powder; (e) magnetic field molding the mixture obtained in step (d) by applying an external magnetic field to form a molded article; and (f) sintering the molded article. 1. A method of preparing an anisotropic complex sintered magnet comprising MnBi , the method comprising:(a) preparing a non-magnetic phase MnBi-based ribbon by a rapidly solidification process (RSP);(b) heat treating the non-magnetic phase MnBi-based ribbon to convert the non-magnetic phase MnBi-based ribbon into a magnetic phase MnBi-based ribbon;(c) grinding the magnetic phase MnBi-based ribbon to form a MnBi hard magnetic phase powder;(d) mixing the MnBi hard magnetic phase powder with a rare-earth hard magnetic phase powder;(e) magnetic field molding the mixture obtained in step (d) by applying an external magnetic field to form a molded article; and(f) sintering the molded article.2. The method of claim 1 , wherein the MnBi-based ribbon prepared in step (a) has a crystal grain size of 50 to 100 nm.3. The method of claim 1 , wherein the MnBi-based ribbon is further prepared using a cooling wheel during the rapidly solidification process claim 1 , and wherein the cooling wheel has a circumference speed of 10 to 300 m/s.4. The method of claim 1 , wherein the MnBi-based ribbon in step (a) is represented by MnBi claim 1 , where X is 50 to 55.5. The method of claim 1 , wherein the heat treating of step (b) is performed at a temperature of 280 to 340° C.6. The ...

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Номер записи: 55
18-06-2015 дата публикации

SINTERED MAGNET AND PROCESS FOR PRODUCTION THEREOF

Номер: US20150170809A1
Автор: IMAGAWA Takao, KOMURO Matahiro, Satsu Yuichi
Принадлежит: Hitachi, Ltd.

The purpose of the present invention is to improve the magnetic characteristics of a sintered magnet without any additional heavy rare earth element. A sintered magnet composed of an NdFeB main phase and a grain boundary phase, wherein; the grain boundary phase contains an oxyfluoride; the concentration of fluorine in the oxyfluoride is higher than that of oxygen therein; the concentration of fluorine in the oxyfluoride decreases depthwise from the surface of the sintered magnet toward the center thereof; and the saturation magnetic flux density of the sintered magnet decreases depthwise from the surface of the sintered magnet toward the center thereof. 1. A sintered magnet comprising a NdFeB main phase and a grain boundary phase , whereinthe grain boundary phase contains an oxyfluoride;a concentration of fluorine in the oxyfluoride is higher than a concentration of oxygen in the oxyfluoride;the concentration of fluorine in the oxyfluoride decreases depthwise from a surface of the sintered magnet; andsaturation magnetic flux density of the sintered magnet decreases depthwise from the surface of the sintered magnet.2. The sintered magnet according to claim 1 , wherein a volume fraction of the oxyfluoride decreases depthwise from the surface of the sintered magnet.3. The sintered magnet according to claim 1 , wherein the concentration of fluorine in the oxyfluoride is higher than 33 atom % in terms of an average value in a region within 100 μm depthwise from the surface of the sintered magnet.4. The sintered magnet according to claim 1 , wherein the oxyfluoride comprises a cubic or tetragonal crystal structure.5. The sintered magnet according to claim 1 , wherein a fluorine content of the whole sintered magnet is 5 atom % or less.6. The sintered magnet according to claim 1 , wherein a concentration of oxygen in the whole sintered magnet is 3000 ppm or less.7. The sintered magnet according to claim 1 , wherein iron or an iron alloy contained in the main phase has a bcc ...

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Номер записи: 56
29-09-2022 дата публикации

BIODEGRADABLE Zn-Mg-Bi ZINC ALLOY AND PREPARATION METHOD THEREOF

Номер: US20220307110A1
Автор: Jiandong Xing, Jiankang ZHANG, Ping Lv, Shengqiang MA, Xiaoli MENG, Xudong Cui, Xuebin He, Yimin Gao
Принадлежит: Shaanxi Zinc Industry Co ltd, Xian Jiaotong University

A biodegradable Zn—Mg—Bi zinc alloy and a preparation method thereof. The method including: melting magnesium under an inert atmosphere to obtain a magnesium melt; adding bismuth particles to the magnesium melt followed by reaction under stirring and heat preservation treatment to obtain a Mg—Bi alloy melt; allowing the Mg—Bi alloy melt to stand in a furnace; subjecting the Mg—Bi alloy melt to refining, slagging-off, casting and demoulding to obtain Mg-50 wt. % Bi alloy ingot; melting zinc to obtain a zinc melt; adding the Mg-50 wt. % Bi alloy ingot and pure magnesium or pure bismuth followed by heating to a preset temperature, stirring and heat preservation to obtain a Zn—Mg—Bi alloy melt; allowing the Zn—Mg—Bi alloy melt to stand in a furnace followed by refining, slagging-off, casting and demoulding to obtain the biodegradable Zn—Mg—Bi zinc alloy.

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Номер записи: 57
21-06-2018 дата публикации

Core Material, Semiconductor Package, and Forming Method of Bump Electrode

Номер: US20180174991A1
Автор: Hattori Takahiro, KAWASAKI Hiroyoshi, Kondo Shigeki, NISHINO Tomoaki, Roppongi Takahiro, Sato Isamu, Soma Daisuke
Принадлежит:

A core material including a core and a solder plating layer of a (Sn—Bi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer. 1. A core material , comprising:a core; andan electric solder plating layer of an (Sn—Bi)-based solder alloy made of Sn and Bi on a surface of the core, the electric solder plating layer being subjected to electric solder plating, whereinthe core includes a metal simple substance of Cu, Ni, Ag, Bi, Pb, Al, Sn, Fe, Zn, In, Ge, Sb, Co, Mn, Au, Si, Pt, Cr, La, Mo, Nb, Pd, Ti, Zr, or Mg, or an alloy of two or more types thereof, a metal oxide thereof, or a metal mixed oxide thereof, and [{'br': None, 'Concentration Ratio (%)=(Measured Value of Bi (mass %)/Target Bi Content (mass %)*100, or'}, {'br': None, 'Concentration Ratio (%)=(Average Value of Measured Values of Bi (mass %)/Target Bi Content (mass %)*100,'}], 'when a concentration ratio of Bi contained in the solder plating layer is set to'}the concentration ratio is in a range of 91.4% to 106.7%.2. A core material , comprising:a core; andan electric solder plating layer of an (Sn-58Bi)-based solder alloy made of Sn and Bi in amount of 58 mass % on a surface of the core, the electric solder plating layer being subjected to electric solder plating, whereinthe core includes a metal simple substance of Cu, Ni, Ag, Bi, Pb, Al, Sn, Fe, Zn, In, Ge, Sb, Co, Mn, Au, Si, Pt, Cr, La, Mo, Nb, Pd, Ti, Zr, or Mg, or an alloy of two or more types thereof, a metal oxide thereof, or a metal mixed oxide thereof, and [{'br': None, 'Concentration Ratio (%)=(Measured Value of Bi (mass %)/Target Bi Content ...

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Номер записи: 58
04-06-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200171570A1
Автор: Cheng Xin, FU Fan, Liang Tao, SU Xianli, TANG Xinfeng, YANG Dongwang, ZHANG QIANG, ZHANG Qingjie, Zheng Gang
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 115-. (canceled)16. A method of preparing a thermoelectric material , comprising:1) weighing powders of reactants according to an appropriate stoichiometric ratio, mixing the powders in an agate mortar, and cold-pressing the powders into a pellet;{'sup': '−3', '2) sealing the pellet in a silica tube under a pressure of 10Pa, initiating a self-propagating high temperature synthesis (SHS) by point-heating a portion of the pellet wherein, once the SHS starts, a wave of exothermic reactions passes through the remaining portion of the pellet, cooling down the pellet after reaction in air or quenched in salt water to obtain a cooled-down pellet; and'} {'sub': 2', '3-x', 'x', '2', '3, 'wherein the reactants include Bi, Te, and Se powders, the stoichiometric ratio is Bi:Te:Se =2:(3-x):x, where 0 Подробнее

Номер записи: 59
04-06-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200171571A1
Автор: Cheng Xin, FU Fan, Liang Tao, SU Xianli, TANG Xinfeng, YANG Dongwang, ZHANG QIANG, ZHANG Qingjie, Zheng Gang
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 2. Based on the new criterion for combustion synthesis , those binary compounds include thermoelectric compounds , high temperature intermetalic and high temperature refractory.4. According to the above step , the pellet after SHS was crushed into powders and then sintered by spark plasma sintering to obtain the bulks5. According to the above step , the binary compounds are mostly thermoelectric material , high temperature ceramics and intermetallic.7. In step 1) of , what we choose for elemental A can be the elemental in IIIB , IVB , and VB column of periodic Table. What we choose for elemental B can be the elemental in VIIIB column of periodic Table. What we choose for elemental X can be the elemental in IIIA , IVA , VA column of periodic Table. In step 3) of , the parameter for spark plasma sintering is with the temperature above 850° C. and the pressure around 30-50 MPa.8. According to and , one of or the mixture of the Ti , Zr , Hf , Sc , Y , La , V , Nb , and Ta can be selected as elemental A. One of or the mixture of the Fe , Co , Ni , Ru , Rh , Pd , and Pt can be selected as elemental B. One of or the mixture of the Sn , Sb , and Bi can be selected as elemental X. The present disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with plasma activated sintering (PAS) and a method for preparing the same. More specifically, the present disclosure relates to a new criterion for combustion synthesis and the method for preparing thermoelectric materials which can meet the new criterion.In the heat flow of the energy ...

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Номер записи: 60
04-06-2020 дата публикации

Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof

Номер: US20200171572A1
Автор: Dongwang Yang, Fan Fu, Gang Zheng, Qiang Zhang, Qingjie Zhang, Tao Liang, Xianli Su, Xin Cheng, Xinfeng Tang
Принадлежит: Wuhan University of Technology WUT

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion.

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Номер записи: 61
04-06-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200171573A1
Автор: Cheng Xin, FU Fan, Liang Tao, SU Xianli, TANG Xinfeng, YANG Dongwang, ZHANG QIANG, ZHANG Qingjie, Zheng Gang
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 115-. (canceled)16. A method of preparing a thermoelectric material , comprising:1) weighing powders of reactants according to an appropriate stoichiometric ratio, mixing the powders in an agate mortar, and cold-pressing the powders into a pellet;{'sup': '−3', '2) sealing the pellet in a silica tube under a pressure of 10Pa, initiating a self-propagating high temperature synthesis (SHS) by point-heating a portion of the pellet wherein, once the SHS starts, a wave of exothermic reactions passes through the remaining portion of the pellet, cooling down the pellet after reaction in air or quenched in salt water to obtain a cooled-down pellet; and'}3) crushing the cooled-down pellet obtained in step 2) into powder, and sintering the powder with plasma activated sintering (PAS) to form a bulk material,{'sub': a', 'b', '4, 'wherein the reactants include Cu, M, Sn, and Se powders, M is Sb, Zn, or Cd; the stoichiometric ratio is Cu:M:Sn:Se=a:1:b:4, where a=2 or 3, b=0 or 1, the cooled-down pellet obtained in step (2) contains CuMSnSe.'} The present disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with plasma activated sintering (PAS) and a method for preparing the same. More specifically, the present disclosure relates to a new criterion for combustion synthesis and the method for preparing thermoelectric materials which can meet the new criterion.In the heat flow of the energy consumption in the world, there is about 70% of the total energy wasted in the form of heat. If those large quantities of waste heat can be ...

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Номер записи: 62
04-06-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200171574A1
Автор: Cheng Xin, FU Fan, Liang Tao, SU Xianli, TANG Xinfeng, YANG Dongwang, ZHANG QIANG, ZHANG Qingjie, Zheng Gang
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 115-. (canceled)16. A ultra-fast synthesis method for preparing high performance Half-Heusler thermoelectric materials , comprising(1) preparing appropriate Stoichiometric amounts of high purity single elemental powders A, B, X in 1:1:1 proportion, mixing the powders in the agate mortar and then cold-pressed into a pellet.{'sup': '−3', '(2) sealing the pellet in a silica tube under the pressure of 10Pa,'}(3) initiating the systhesis by point-heating a small part of the pellet,(4) cooling down the systhesized product to room temperature in the air or quenched in the salt water.(5) crushing the synthesized product into fine powders, and(6) sintering the powders by plasma activated sintering (PAS).17. The ultra-fast synthesis method according to claim 16 , wherein A is an element selected from elements in IIIB claim 16 , IVB claim 16 , and VB columns of the periodic table; B is an element selected from elements in VIIIB column of the periodic table; X is an element selected from elements in IIIA claim 16 , IVA claim 16 , VA columns of the periodic table; and the sintering is performed with a temperature above 850° C. and a pressure from 30 to 50 MPa.18. The ultra-fast synthesis method according to claim 16 , wherein element A is selected from one of the followings Ti claim 16 , Zr claim 16 , Hf claim 16 , Sc claim 16 , Y claim 16 , La claim 16 , V claim 16 , Nb claim 16 , and Ta; element B is selected from one of the followings Fe claim 16 , Co claim 16 , Ni claim 16 , Ru claim 16 , Rh claim 16 , Pd claim 16 , and Pt; and X is selected from one of the followings Sn claim 16 , Sb claim 16 , and ...

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Номер записи: 63
16-07-2015 дата публикации

SOLDER ALLOY

Номер: US20150196978A1
Автор: Iseki Takashi, Shimizu Toshikazu
Принадлежит:

Disclosed herein are a solder alloy and an electronic device using the solder alloy to join electronic components. The solder alloy has virtually no limitation in its alloy composition, is excellent in wettability and joinability necessary for electronic device assembly, and thus ensures high joint reliability. 1. A solder alloy comprising 85 mass % or more of Bi and having an oxide layer thickness of 120 nm or less and a surface roughness (Ra) of 0.60 μm or less.2. The solder alloy according to claim 1 , comprising 0.01 mass % or more but 13.5 mass % or less of Zn.3. The solder alloy according to claim 1 , comprising 0.01 mass % or more but 12.0 mass % or less of Ag.4. A solder alloy comprising 40 mass % or more but less than 85 mass % of Bi and 60 mass % or less of Sn and having an oxide layer thickness of 120 nm or less and a surface roughness (Ra) of 0.60 μm or less claim 1 , wherein when an element or elements other than Bi and Sn are contained claim 1 , content thereof is 5 mass % or less.5. A solder alloy comprising Pb as a main component and at least one of Sn claim 1 , Ag claim 1 , Cu claim 1 , In claim 1 , Te claim 1 , and P as a second element group and having an oxide layer thickness of 120 nm or less and a surface roughness (Ra) of 0.60 m or less claim 1 , wherein a total amount of Pb and the second element group is 80 mass % or more.6. A solder alloy comprising Sn as a main component and at least one of Ag claim 1 , Sb claim 1 , Cu claim 1 , Ni claim 1 , Ge claim 1 , and P as a second element group and having an oxide layer thickness of 120 nm or less and a surface roughness (Ra) of 0.60 rm or less claim 1 , wherein a total amount of Sn and the second element group is 80 mass % or more.7. A solder alloy comprising Au as a main component and at least one of Ge claim 1 , Sn claim 1 , and Si as a second element group and having an oxide layer thickness of 120 nm or less and a surface roughness (Ra) of 0.60 μm or less claim 1 , wherein a total amount of Au ...

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Номер записи: 64
15-07-2021 дата публикации

ZINTL COMPOUNDS WITH HIGH THERMOELECTTRIC PERFORMANCE AND METHODS OF MANUFACTURE THEREOF

Номер: US20210217943A1
Автор: Ren Zhifeng, SHUAI Jing
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AMX, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium N (Sr), and has a ZT of the above about 0.60 above 675 K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula MgSbBiTethat has an average ZT above 0.8 from 400 K to 800 K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations. 1. A thermoelectric device comprising:{'sub': y', 'y, 'a thermoelectric material comprising a formula AMX, wherein the thermoelectric material comprises a dimensionless figure of merit (ZT) greater than 0.60 at about 675 K.'}2. The device of claim 1 , wherein A comprises at least two components and y is from about 0.1 to about 0.9.3. The device of claim 1 , wherein A comprises at least one of calcium (Ca) claim 1 , europium (Eu) claim 1 , ytterbium (Yb) claim 1 , and strontium (Sr).4. The device of claim 1 , wherein M comprises at least one of manganese (Mn) claim 1 , zinc (Zn) claim 1 , and cadmium (Cd).5. The device of claim 1 , wherein X comprises at least one of bismuth (Bi) and antimony (Sb).6. The device of claim 1 , wherein y=2.7. The device of claim 1 , wherein the ZT of the thermoelectric material is greater than 0.60 at about 675 K subsequent to hot-pressing.8. The device of claim -1 claim 1 , wherein the thermoelectric material is according to the formula CaYbMgBi.9. The device of claim 1 , wherein the thermoelectric material is according to the formula EuCaZnSb.10. The device of claim 8 , wherein x is greater than 0.11. The device of claim 8 , wherein x is from about 0.3 to about 1.0.12. A thermoelectric device comprising:{'sub': 3.2', '1.5', '0.5-x', 'x, 'a thermoelectric component comprising ...

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Номер записи: 65
14-07-2016 дата публикации

SYNTHESIS OF FERROMAGNETIC MANGANESE-BISMUTH NANOPARTICLES USING A MANGANESE-BASED LIGATED ANIONIC-ELEMENT REAGENT COMPLEX (Mn-LAERC) AND FORMATION OF BULK MnBi MAGNETS THEREFROM

Номер: US20160199916A1
Автор: Rowe Michael Paul, Skoropata Elizabeth Marie, van Lierop Johan Alexander, Wrocyznskyj Yaroslav Stephan
Принадлежит:

A method for synthesizing ferromagnetic manganese-bismuth (MnBi) nanoparticles, and the MnBi nanoparticles so synthesized, are provided. The method makes use of a novel reagent termed a manganese-based Anionic Element Reagent Complex (Mn-LAERC). A process for forming a bulk MnBi magnet from the synthesized MnBi nanoparticles is also provided. The process involves simultaneous application of elevated temperature and pressure to the nanoparticles. 1. A method for synthesizing MnBi nanoparticles , the method comprising: {'br': None, 'sup': '0', 'sub': y', 'z, 'Mn.X.L\u2003\u2003I,'}, 'adding cationic bismuth to a complex according to Formula I,'}{'sup': '0', 'wherein Mnis zero-valent manganese, X is a hydride molecule, L is a nitrile compound, y is an integral or fractional value greater than zero, and z is an integral or fractional value greater than zero;'}thereby forming the MnBi nanoparticles.2. The method as recited in claim 1 , wherein the nitrile compound is undecyl cyanide.3. The method as recited in claim 1 , further comprising:contacting the complex with a free surfactant.4. The method as recited in claim 3 , wherein the adding and contacting steps are performed simultaneously.5. The method as recited in claim 1 , wherein the cationic bismuth is present as part of a bismuth salt claim 1 , the bismuth salt having an acyl anion.6. The method as recited in claim 5 , wherein the acyl anion is neodecanoate.7. The method as recited in claim 1 , wherein the hydride molecule is a borohydride.8. The method as recited in claim 1 , wherein the hydride molecule is lithium borohydride.9. MnBi nanoparticles synthesized by a method comprising: {'br': None, 'sup': '0', 'sub': y', 'z, 'Mn.X.L\u2003\u2003I,'}, 'adding cationic bismuth to a complex according to Formula I,'}{'sup': '0', 'wherein Mnis zero-valent manganese, X is a hydride molecule, L is a nitrile compound, y is an integral or fractional value greater than zero, and z is an integral or fractional value greater ...

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Номер записи: 66
12-07-2018 дата публикации

METHOD OF PRODUCING ALLOY NANOPARTICLES

Номер: US20180195153A1
Автор: AKAMATSU Kensuke, Yoshinaga Fumitaka
Принадлежит:

A method of producing a homogenous skutterudite compound, CoSb, having a crystallite diameter of 100 nm or less, by a convenient synthesis process, which is a method of producing CoSb, comprising reducing Coand Sbto Coand Sb, respectively, in a solution including a Co-containing compound and an Sb-containing compound using a reducing agent, wherein supplied amount of the Co-containing compound and the Sb-containing compound are adjusted in order to set a ratio of a reduction rate of Coto Coto a reduction rate of Sbto Sbto 1:2.9 to 1:3.1. 1. A method of producing CoSb , comprising reducing Coand Sbto Coand Sb , respectively , in a solution including a Co-containing compound and an Sb-containing compound using a reducing agent , wherein supplied amounts of the Co-containing compound and the Sb-containing compound are adjusted in order to set a ratio of a reduction rate of Coto Coto a reduction rate of Sbto Sbto 1:2.9 to 1:3.1.2. The method according to claim 1 , wherein the supplied amounts of the Co-containing compound and the Sb-containing compound are adjusted in order to set the ratio of the reduction rate of Coto Coto the reduction rate of Sbto Sbto 1:3.3. The method according to claim 1 , wherein at least one weak reducing agent selected from the group consisting of oxalic acid claim 1 , ascorbic acid claim 1 , and citric acid is used as the reducing agent for reducing Coand Sbto Coand Sb claim 1 , respectively.4. The method according to claim 2 , wherein at least one weak reducing agent selected from the group consisting of oxalic acid claim 2 , ascorbic acid claim 2 , and citric acid is used as the reducing agent for reducing Coand Sbto Coand Sb claim 2 , respectively.5. The method according to claim 1 , which is carried out at a reaction temperature of 250° C. to 320° C. within a reaction time of 1 hour to 10 hours.6. The method according to claim 2 , which is carried out at a reaction temperature of 250° C. to 320° C. within a reaction time of 1 hour to 10 ...

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Номер записи: 67
27-06-2019 дата публикации

SOLDER BONDING METHOD AND SOLDER JOINT

Номер: US20190193211A1
Автор: INABA Ko, Kosuga Tadashi, TAKEMASA Tetsu
Принадлежит: Lenovo (Singapore) Pte. Ltd.

A solder bonding method that bonds, using a solder joint, an electrode of a circuit board to an electrode of an electronic component includes: depositing, on the electrode of the circuit board, an Sn—Bi-based solder alloy with a lower melting point than a solder alloy deposited on the electrode of the electronic component; mounting the electronic component on the circuit board such that the Sn—Bi-based solder alloy contacts the solder alloy on the electrode of the electronic component; heating the circuit board to a peak temperature of heating of 150° C. to 180° C.; holding the peak temperature of heating at a holding time of greater than 60 seconds and less than or equal to 150 seconds; and cooling, after the heating and to form the solder joint, the circuit board at a cooling rate greater than or equal to 3° C./sec. 1. A solder bonding method that bonds , using a solder joint , an electrode of a circuit board to an electrode of an electronic component , the method comprising:depositing, on the electrode of the circuit board, an Sn—Bi-based solder alloy with a lower melting point than a solder alloy deposited on the electrode of the electronic component;mounting the electronic component on the circuit board such that the Sn—Bi-based solder alloy contacts the solder alloy on the electrode of the electronic component;heating the circuit board to a peak temperature of heating of 150° C. to 180° C.;holding the peak temperature of heating at a holding time of greater than 60 seconds and less than or equal to 150 seconds; andcooling, after the heating and to form the solder joint, the circuit board at a cooling rate greater than or equal to 3° C./sec.2. The solder bonding method according to claim 1 , wherein claim 1 , in the solder joint claim 1 , the peak temperature of heating is lower than a melting point of the solder alloy deposited on the electrode of the electronic component.3. The solder bonding method according to claim 1 , wherein a proportion of Bi phases ...

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Номер записи: 68
29-07-2021 дата публикации

SOLDER PARTICLES AND METHOD FOR PRODUCING SOLDER PARTICLES

Номер: US20210229222A1
Автор: AKAI Kunihiko, Ejiri Yoshinori, MIYAJI Masayuki, MORIYA Toshimitsu, Okada Yuuhei, Sukata Shinichirou
Принадлежит: SHOWA DENKO MATERIALS CO., LTD.

A method for producing solder particles, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; and a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses. With respect to this method for producing solder particles, the average particle diameter of the solder particles is from 1 μm to 30 μm; and the C.V. value of the solder particles is 20% or less. 1. A method for producing solder particles , comprising:a preparation step in which a base material having a plurality of recesses and solder fine particles are prepared;an accommodation step in which at least some of the solder fine particles are accommodated in the recesses; anda fusing step in which the solder fine particles accommodated in the recesses are fused and the solder particles are formed inside the recesses,wherein the solder particles have an average particle diameter of 1 μm to 30 μm and the solder particles have an C.V. value of 20% or less.2. The method for producing solder particles according to claim 1 ,wherein the C.V. value of the solder fine particles prepared in the preparation step is more than 20%.3. The method for producing solder particles according to claim 1 ,wherein, before the fusing step, the solder fine particles accommodated in the recesses are exposed to a reducing atmosphere.4. The method for producing solder particles according to claim 1 ,wherein, in the fusing step, the solder fine particles accommodated in the recesses are fused under a reducing atmosphere.5. The method for producing solder particles according to claim 1 ,wherein the solder fine particles prepared in the preparation step include at least one selected from a group consisting of tin, tin alloys, indium and indium alloys.6. The method for producing ...

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Номер записи: 69
29-07-2021 дата публикации

Extreme Ultraviolet Mask Blank Hard Mask Materials

Номер: US20210232040A1
Автор: Azeddine Zerrade, Shuwei Liu, Vibhu Jindal, Wen Xiao
Принадлежит: Applied Materials Inc

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

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Номер записи: 70
29-07-2021 дата публикации

Extreme Ultraviolet Mask Absorber Materials

Номер: US20210232042A1
Автор: Jindal Vibhu, LIU Shiyu, Liu Shuwei, Ramalingam Ramya, Zerrade Azeddine
Принадлежит: Applied Materials, Inc.

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen. 1. A method of manufacturing an extreme ultraviolet (EUV) mask blank comprising:forming on a substrate a multilayer stack which reflects EUV radiation, the multilayer stack comprising a plurality of reflective layer pairs;forming a capping layer on the multilayer stack; andforming an absorber layer on the capping layer, the absorber layer comprising a compound of antimony and nitrogen.2. The method of claim 1 , wherein the compound of antimony and nitrogen comprises from about 78.8 wt. % to about 99.8 wt. % antimony and from about 0.2 wt. % to about 21.2 wt. % nitrogen.3. The method of claim 1 , wherein the compound of antimony and nitrogen comprises from about 83.8 wt. % to about 94.8 wt. % antimony and from about 5.2 wt. % to about 16.2 wt. % nitrogen.4. The method of claim 2 , wherein the compound of antimony and nitrogen comprises from about 86.8 wt. % to about 91.8 wt. % antimony and from about 8.2 wt. % to about 13.2 wt. % nitrogen.5. The method of claim 3 , wherein the compound of antimony and nitrogen is amorphous.6. The method of claim 1 , wherein the compound is formed by sputtering the antimony with a gas selected from one or more of argon (Ar) claim 1 , oxygen (O) claim 1 , or nitrogen (N) to form the absorber layer.7. The method of claim 1 , wherein the compound is formed layer by layer as a laminate of antimony and nitrogen layers including gas phase nitridation of an antimony layer.8. The method of claim 1 , wherein the compound is deposited using a bulk target having the same composition as the compound and is sputtered using a gas selected from one or more of argon (Ar) claim 1 , ...

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Номер записи: 71
27-06-2019 дата публикации

CONDUCTIVE COMPOSITES

Номер: US20190198190A1
Автор: DUSTIN Ashley M., Gross Adam F., Guan Xin N., Nowak Andrew P., Sharp Richard E.
Принадлежит:

Disclosed are conductive composites comprising a polymer, a conductor selected from metals and metal alloys, and a thickening agent. 1. A conductive composite comprising:(a) a polymer;(b) a conductor selected from metals and metal alloys having a melting temperature below about 60° C.; and(c) a thickening agent.2. A conductive composite according to claim 1 , wherein the composite comprises a thermoset or thermoplastic elastomer.3. A conductive composite according to wherein the composite comprises urethane linkages claim 1 , urea linkages claim 1 , or urethane and urea linkages.4. A conductive composite according to wherein the thermoplastic elastomer is a polyurethane formed by a reaction of a di- or polyisocyanate and a polyol reactant is selected from siloxanes claim 2 , fluorosiloxanes claim 2 , perfluoropolyethers claim 2 , polyethers claim 2 , polyesters claim 2 , polybutadiene-based polyols claim 2 , polycarbonate-based polyols claim 2 , and combinations thereof.5. A conductive composite according to wherein the conductor is an alloy comprising at least about 50% by weight of gallium claim 1 , bismuth claim 1 , mercury claim 1 , or combinations thereof.6. A conductive composite according to claim 1 , wherein the conductor is an alloy comprising indium and 50-97% by weight of gallium.7. A conductive composite according to claim 1 , wherein the conductor is an alloy comprising about 15-30% by weight of indium claim 1 , about 55-80% by weight of gallium claim 1 , and at least one metal selected from tin and zinc.8. A conductive composite according to claim 1 , wherein the thickening agent is an organic thickening agent.9. A conductive composite according to claim 1 , wherein the thickening agent is an inorganic thickening agent.10. A composition comprising a metal or metal alloy having a melting temperature below 60° C. and an organic thickening agent.11. A composition according to claim 10 , wherein the composition further comprises an inorganic thickening ...

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Номер записи: 72
29-07-2021 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20210233871A1
Автор: INABA Yuki, KAIZU RYOICHI, NOMURA TAKUMI, Sakamoto Yoshitsugu, YAMAGISHI Tetsuto
Принадлежит:

A semiconductor device includes a semiconductor chip made of a SiC substrate and having main electrodes on one surface and a rear surface, first and second heat sinks, respectively, disposed adjacent to the one surface and the rear surface, a terminal member interposed between the second heat sink and the semiconductor chip, and a plurality of bonding members disposed between the main electrodes, the first and second heat sinks, and the terminal member. The terminal member includes plural types of metal layers symmetrically layered in the plate thickness direction. The terminal member as a whole has a coefficient of linear expansion at least in a direction orthogonal to the plate thickness direction in a range larger than that of the semiconductor chip and smaller than that of the second heat sink. 1. A semiconductor device comprising:a semiconductor chip including a SiC substrate formed with an element, the semiconductor chip having main electrodes on one surface and a rear surface opposite to the one surface in a plate thickness direction;a first heat sink and a second heat sink, as a pair of heat sinks, being disposed so as to interpose the semiconductor chip therebetween in the plate thickness direction, the first heat sink being adjacent to the one surface of the semiconductor chip, the second heat sink being adjacent to the rear surface of the semiconductor chip;a terminal member being interposed between the second heat sink and the semiconductor chip, the terminal member electrically interconnecting the second heat sink and the main electrode on the rear surface; anda plurality of bonding members being disposed between the main electrode on the one surface and the first heat sink, between the main electrode on the rear surface and the terminal member, and between the terminal member and the second heat sink, respectively, whereinthe terminal member is provided by a plurality of types of metal layers that are stacked in the plate thickness direction,the ...

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Номер записи: 73
28-07-2016 дата публикации

HIGH IMPACT SOLDER TOUGHNESS ALLOY

Номер: US20160214213A1
Автор: Chattopadhyay Kamanio, Chegudi Sujatha, de Avila Ribas Morgana, Kumar Anil K.N., Lodge Dominic, Pandher Ranjit, Sarkar Siuli, Singh Bawa
Принадлежит: ALPHA METALS, INC.

A lead-free solder alloy, comprising from 35 to 59% wt Bi; Cu in a concentration up to 1.0 wt %; from 0.01 to 0.5 wt % Ni; and the balance Sn, together with any unavoidable impurities, with certain embodiments further comprising Ag, such as up to 1 wt % Ag. 120.-. (canceled)21. A lead-free solder alloy , comprising:from 35 to 59% wt Bi;Cu in a concentration up to 1.0 wt %;from 0.01 to 0.5 wt % Ni;and the balance Sn, together with any unavoidable impurities.22. The alloy of further comprising Ag.23. The alloy of further comprising Ag in a concentration up to 1.0 wt %.24. The alloy of consisting essentially of:from 35 to 59% wt Bi;from 0.05 to 0.5 wt % Cu;from 0.01 to 0.05 wt % Ni;Ag in the concentration up to 1.0 wt %;and balance Sn, together with any unavoidable impurities.25. The alloy of consisting of:from 35 to 59% wt Bi;from 0.05 to 0.5 wt % Cu;from 0.01 to 0.05 wt % Ni;Ag in the concentration up to 1.0 wt %;and balance Sn, together with any unavoidable impurities.26. The alloy of wherein the Ag is present in a concentration of at least 0.4 wt %.27. The alloy of wherein the Cu is present in a concentration of at least 0.1 wt %.28. The alloy of wherein the Ag is present in a concentration of at least 0.4 wt % and Cu is present in a concentration of at least 0.1 wt %.29. The alloy of wherein the Ag is present in a concentration of at least 0.4 wt % and Cu is present in a concentration of at least 0.1 wt %.30. The alloy of wherein the Cu is present in a concentration of at least 0.1 wt % claim 24 , and the Bi is present in a concentration of 57 to 59 wt %.31. The alloy of wherein the Ag is present in a concentration of at least 0.4 wt % claim 24 , the Cu is present in a concentration of at least 0.1 wt % claim 24 , and the Bi is present in a concentration of 57 to 59 wt %.32. The alloy of consisting essentially of:from 35 to 59% wt Bi;Cu in a concentration up to 1.0 wt %;from 0.01 to 0.05 wt % Ni;Ag in a concentration up to 1.0 wt %;and the balance Sn, together ...

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Номер записи: 74
06-08-2015 дата публикации

High-temperature lead-free solder alloy

Номер: US20150217410A1
Автор: Minoru Ueshima, Rei Fujimaki
Принадлежит: Senju Metal Industry Co Ltd

Provided is a high-temperature lead-free solder alloy having excellent tensile strength and elongation in a high-temperature environment of 250° C. In order to make the structure of an Sn—Sb—Ag—Cu solder alloy finer and cause stress applied to the solder alloy to disperse, at least one material selected from the group consisting of, in mass %, 0.003 to 1.0% of Al, 0.01 to 0.2% of Fe, and 0.005 to 0.4% of Ti is added to a solder alloy containing 35 to 40% of Sb, 8 to 25% of Ag, and 5 to 10% of Cu, with the remainder made up by Sn.

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Номер записи: 75
05-08-2021 дата публикации

SINTERED COMPACT TARGET AND METHOD OF PRODUCING SINTERED COMPACT

Номер: US20210237153A1
Автор: FUKUYO Hideaki, Takahashi Hideyuki, Yahagi Masataka, Yamakoshi Yasuhiro
Принадлежит:

A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μmof the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles. 1. A method of producing a sintered compact containing an element (A) and an element (B) , comprising the steps of:mixing raw material powder composed of respective elements or raw material powder of an alloy of two or more elements;{'sub': 0', '0', '0', '0', '0, 'vacuum hot pressing the mixed powder under conditions that satisfy the following formula: P (pressure)≤(Pf/(Tf−T))×(T−T)+Pwherein Pf: final pressure, Tf: final temperature, P: atmospheric pressure, T: heating temperature, T: room temperature, and temperatures are in Celsius; and'}{'sub': 'hip', 'further performing hot isostatic pressing (HIP) treatment under the conditions of P>5×Pf;'}{'sup': '2', 'wherein the sintered compact is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in an area of 40,000 μmof the target surface is 100 micropores or less; and'}wherein (A): one or more chalcogenide elements selected from S, Se, and Te and (B): one or more elements selected from Bi, Sb, As, P, and N.2. The method of producing a sintered compact according to claim 1 , wherein a composition of the sintered compact is selected from the group consisting of Ge—Sb—Te claim 1 , Ag—In—Sb—Te claim 1 , and Ge—In—Sb—Te.3. The method of ...

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Номер записи: 76
06-08-2015 дата публикации

METHOD OF PRODUCTION OF CORE/SHELL TYPE NANOPARTICLES, METHOD OF PRODUCTION OF SINTERED BODY USING THAT METHOD, AND THERMOELECTRIC CONVERSION MATERIAL PRODUCED BY THAT METHOD

Номер: US20150221850A1
Автор: ISHIKIRIYAMA Mamoru, KINOSHITA Youhei, KODAMA Tomoki, SAITO Nagahiro, SUDARE Tomohito, Watanabe Masao
Принадлежит:

A method of production of core/shell type nanoparticles includes the following steps: a first step of applying a first power to cause the generation of the plasma so as to selectively cause the precipitation of a first metal so as to form nanoparticles as cores and a second step of applying a second power which is larger than the first power to cause the generation of the plasma so as to cause the precipitation of a second metal which has a smaller oxidation reduction potential than the first metal on the core surface so as to form shells which are comprised of the second metal which cover the cores which are comprised of the first metal. 1. A method of production of core/shell type nanoparticles by the solution plasma method ,which method of production of core/shell type nanoparticles includes a process of causing the generation of plasma in a solution so as to reduce two types of metal salts which are dissolved in that solution and cause a first metal and a second metal to precipitate,which process includes the following steps:a first step of applying a first power to cause the generation of said plasma so as to selectively cause the precipitation of said first metal so as to form nanoparticles as cores anda second step of applying a second power which is larger than said first power to cause the generation of said plasma so as to cause the precipitation of said second metal which has a smaller oxidation reduction potential than said first metal on said core surface so as to form shells which are comprised of said second metal which cover said cores which are comprised of said first metal.2. The method of production of core/shell type nanoparticles according to claim 1 , wherein said applied power is made to increase to said second power while application of said first power is causing the transmittance (%) of said solution to fall linearly with respect to time.3. The method of production of core/shell type nanoparticles according to claim 1 , wherein said power ...

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Номер записи: 77
04-07-2019 дата публикации

SLIDING MEMBER AND SLIDING BEARING

Номер: US20190203769A1
Автор: SUGA Shigeyuki
Принадлежит: TAIHO KOGYO CO., LTD.

Provided are a sliding member and a sliding bearing which can improve the fatigue resistance. A sliding member having a base layer and a coating layer laminated on the base layer, in which the coating layer contains Bi or Sn as a first metal element, a second metal element which is harder than the first metal element and forms an intermetallic compound with the first metal element, C, and unavoidable impurities. 1. A sliding member comprising a base layer and a coating layer laminated on the base layer ,wherein the coating layer contains:Bi as a first metal element;a second metal element that is harder than the first metal element and forms an intermetallic compound with the first metal element;0.010 wt % or more and 0.080 wt % or less of C; andunavoidable impurities.2. A sliding bearing comprising a base layer and a coating layer laminated on the base layer ,wherein the coating layer contains:Bi as a first metal element;a second metal element that is harder than the first metal element and forms an intermetallic compound with the first metal element;0.010 wt % or more and 0.080 wt % or less of C; andunavoidable impurities.3. A sliding member comprising a base layer and a coating layer laminated on the base layer ,wherein the coating layer contains:Sn as a first metal element;a second metal element that is harder than the first metal element and forms an intermetallic compound with the first metal element;0.015 wt % or more and 0.100 wt % or less of C; andunavoidable impurities.4. A sliding bearing comprising a base layer and a coating layer laminated on the base layer ,wherein the coating layer contains:Sn as a first metal element;a second metal element that is harder than the first metal element and forms an intermetallic compound with the first metal element;0.015 wt % or more and 0.100 wt % or less of C; andunavoidable impurities. The present invention relates to a sliding member and a sliding bearing in which a counterpart member slides on a sliding surface.An ...

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Номер записи: 78
13-08-2015 дата публикации

MIXED ALLOY SOLDER PASTE

Номер: US20150224602A1
Автор: LEE NING-CHENG, ZHANG Hongwen
Принадлежит: Indium Corporation

A solder paste consists of an amount of a first solder alloy powder between 60 wt % to 92 wt %; an amount of a second solder alloy powder greater than 0 wt % and less than 12 wt %; and a flux; wherein the first solder alloy powder comprises a first solder alloy that has a solidus temperature above 260° C.; and wherein the second solder alloy powder comprises a second solder alloy that has a solidus temperature that is less than 250° C. 1. A solder paste , consisting of:an amount of a first solder alloy powder between 60 wt % to 92 wt %;an amount of a second solder alloy powder greater than 0 wt % and less than 12 wt %; andflux;wherein the first solder alloy powder comprises a first solder alloy that has a solidus temperature above 260° C.; andwherein the second solder alloy powder comprises a second solder alloy that has a solidus temperature that is less than 250° C.2. The solder paste of claim 1 , wherein the second solder alloy has a solidus temperature between 230° C. and 250° C.3. The solder paste of claim 2 , wherein the second solder alloy comprises a Sn alloy claim 2 , a Sn—Sb alloy claim 2 , or a Sn—Sb—X (where X=Ag claim 2 , Al claim 2 , Au claim 2 , Co claim 2 , Cu claim 2 , Ga claim 2 , Ge claim 2 , In claim 2 , Mn claim 2 , Ni claim 2 , P claim 2 , Pd claim 2 , Pt claim 2 , or Zn) alloy.4. The solder paste of claim 1 , wherein the second solder alloy has a solidus temperature between 200° C. and 230° C.5. The solder paste of claim 4 , wherein the second solder alloy comprises a Sn—Ag alloy claim 4 , a Sn—Cu alloy claim 4 , a Sn—Ag—X (where X=Al claim 4 , Au claim 4 , Co claim 4 , Cu claim 4 , Ga claim 4 , Ge claim 4 , In claim 4 , Mn claim 4 , Ni claim 4 , P claim 4 , Pd claim 4 , Pt claim 4 , Sb claim 4 , or Zn) alloy claim 4 , or a Sn—Zn alloy.6. The solder paste of claim 1 , wherein the second solder alloy has a solidus temperature below 200° C.7. The solder paste of claim 6 , wherein the second solder alloy comprises a Sn—Bi alloy claim 6 , a Sn—In ...

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Номер записи: 79
16-10-2014 дата публикации

SOLID METAL ALLOY

Номер: US20140308158A1
Автор: Araki Kazuya, Enomura Masakazu, Honda Daisuke, Maekawa Masaki
Принадлежит:

The present invention addresses the problem of providing a novel, sold metal alloy. Provided is a metal alloy containing two or more types of metal, wherein an equilibrium diagram of the metal alloy shows the two or more types of metal in a finely mixed state at the nanolevel in a specific region where the two types of metal are unevenly distributed. This metal alloy has a substitutional solid solution of the two or more types of metal as the principal constituent thereof. This metal alloy is preferably one obtained by precipitation after mixing ions of two or more types of metal and a reducing agent in a thin-film fluid formed between processing surfaces, at least one of which rotates relative to the other, which are arranged so as to face one another and are capable of approaching and separating from one another. 1. A metal alloy , which is a solid alloy comprising at least two metals , whereinin a specific solid phase region showing a non-solid solution state in equilibrium diagram of the said alloy,the two metals form a solid solution, andthe two metals show a finely mixed state in the level of nanometers, whereinthe finely mixed state in the level of nanometers is the mixed state of the said alloy in which as the result of analysis of mole ratio of the two metals by a TEM-EDS microanalysis using a beam diameter of 5 nm or by a STEM-EDS microanalysis using a beam diameter of 0.2 nm, in 50% or more of analysis points, the two metals are in the mixed state thereof with the mole ratios of the two metals being detected within ±30% of the mole ratios of the two metals obtained by ICP analysis results.2. The metal alloy according to claim 1 , wherein the alloy comprises mainly a non-eutectic body structure not containing a eutectic body of the at least two metals.3. The metal alloy according to claim 1 , wherein the alloy comprises mainly a non-eutectic body structure not containing a eutectic body and an intermetallic body of the at least two metals.4. The metal ...

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Номер записи: 80
02-07-2020 дата публикации

THERMOELECTRIC MATERIALS SYNTHESIZED BY SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS PROCESS AND METHODS THEREOF

Номер: US20200206818A1
Автор: Cheng Xin, FU Fan, Liang Tao, SU Xianli, TANG Xinfeng, YANG Dongwang, ZHANG QIANG, ZHANG Qingjie, Zheng Gang
Принадлежит:

The disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with Plasma activated sintering and methods for preparing thereof. More specifically, the present disclosure relates to the new criterion for combustion synthesis and the method for preparing the thermoelectric materials which meet the new criterion. 115-. (canceled)16. A method of preparing a thermoelectric material , comprising:1) weighing powders of reactants according to an appropriate stoichiometric ratio, mixing the powders in an agate mortar, and cold-pressing the powders into a pellet;{'sup': '−3', '2) sealing the pellet in a silica tube under a pressure of 10Pa, initiating a self-propagating high temperature synthesis (SHS) by point-heating a portion of the pellet wherein, once the SHS starts, a wave of exothermic reactions passes through the remaining portion of the pellet, cooling down the pellet after reaction in air or quenched in salt water to obtain a cooled-down pellet; and'} {'sub': 2', '3', '2', '3, 'wherein the reactants include Cu, Sn, and Se powders, the stoichiometric ratio is Cu:Sn:Se=2.02:1:3.03, the cooled-down pellet obtained in step (2) contains CuSnSe, parameters of the PAS include a reaction temperature around 500-550° C. with a heating rate of 50-100° C./min and a reaction pressure around 30-35 MPa for 5-7 min, a final product is a CuSnSebased thermoelectric material.'}, '3) crushing the cooled-down pellet obtained in step 2) into powder, and sintering the powder with plasma activated sintering (PAS) to form a bulk material,'} The present disclosure relates to thermoelectric materials prepared by self-propagating high temperature synthesis (SHS) process combining with plasma activated sintering (PAS) and a method for preparing the same. More specifically, the present disclosure relates to a new criterion for combustion synthesis and the method for preparing thermoelectric materials which can meet the new ...

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Номер записи: 81
09-08-2018 дата публикации

METHOD OF MANUFACTURING A MANGANESE BISMUTH ALLOY

Номер: US20180221959A1
Автор: Li Wanfeng
Принадлежит: FORD GLOBAL TECHNOLOGIES, LLC

A method of increasing volume ratio of magnetic particles in a MnBi alloy includes operating a jet miller fed with a MnBi alloy powder containing magnetic particles and non-magnetic particles with gas flow parameters selected such that, only for the magnetic particles, a gas drag force is greater than a centrifugal force within the jet miller to separate the magnetic particles from the non-magnetic particles. 1. A method of increasing volume ratio of magnetic particles in a MnBi alloy comprising:operating a jet miller fed with a MnBi alloy powder containing magnetic particles and non-magnetic particles with gas flow parameters selected such that, only for the magnetic particles, a gas drag force is greater than a centrifugal force within the jet miller to separate the magnetic particles from the non-magnetic particles.2. The method of claim 1 , wherein the gas flow parameters include pushing nozzle pressure claim 1 , grinding nozzle pressure claim 1 , miller cut size claim 1 , or a combination thereof.3. The method of claim 2 , wherein for a given miller cut size claim 2 , the magnetic particles are separated from the non-magnetic particles as long as the pushing nozzle pressure and the grinding nozzle pressure fall within a predefined set of values.4. The method of claim 2 , wherein the grinding nozzle pressure has a lower limit than the pushing nozzle pressure.5. The method of claim 1 , wherein the drag force and centrifugal force act on the particles in the jet miller.6. The method of claim 1 , wherein the MnBi alloy is crushed and has a particle size between about 100 μm and 500 μm.7. The method of claim 1 , wherein the magnetic particles have a smaller diameter and lower density than the non-magnetic particles.8. The method of claim 1 , wherein the separated magnetic particles comprise up to 95 volume % magnetic phase.9. The method of claim 1 , wherein the operating is conducted for a predefined time period.10. A method of separating magnetic and non-magnetic ...

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Номер записи: 82
11-08-2016 дата публикации

BISMUTH-ANTIMONY ANODES FOR LITHIUM OR SODIUM ION BATTERIES

Номер: US20160233491A1
Автор: Manthiram Arumugam, Zhao Yubao
Принадлежит:

The present disclosure relates to bismuth (Bi)-antimony (Sb) anodes for use in rechargeable lithium ion (Li) or sodium ion (Na) batteries, to methods of forming electrochemically active Bi—Sb alloys, and to rechargeable batteries containing such anodes. 1. A rechargeable battery comprising:an anode comprising a bismuth (Bi)-antimony (Sb) alloy;a cathode; andan electrolyte comprising an ion.2. The battery of claim 1 , wherein the ratio of Bi: Sb is between 1:9 and 9:1.3. The battery of claim 1 , wherein the ion is a lithium ion (Li).4. The battery of claim 3 , wherein the anode further comprises a Li—Bi compound or a Li—Sb compound claim 3 , or both.5. The battery of claim 1 , wherein the ion is a sodium ion (Na6. The battery of claim 5 , wherein the anode further comprises a Na—Bi compound or a Na—Sb compound.7. The battery of claim 1 , wherein the Bi—Sb alloy is homogenous.8. The battery of claim 1 , wherein the Bi—Sb alloy has a crystal structure in the R-3m space group.9. The battery of claim 1 , wherein the anode further comprises elemental carbon (C).10. The battery of claim 1 , where the voltage changes less than 5% during a time frame that represents 90% of the time required for charge or discharge of the battery.11. The battery of claim 1 , wherein the cathode comprises a transition-metal oxide able to provide a host framework into which the ion may be reversibly inserted and extracted.12. The battery of claim 1 , wherein the ion comprises lithium ion and the cathode comprises a lithium transition-metal oxide claim 1 , a lithium transition-metal polyanion oxide claim 1 , a peroxide claim 1 , sulfur claim 1 , a sulfur-polymer claim 1 , or a sulfoselenide.13. The battery of claim 1 , wherein the ion comprises sodium ion and the cathode comprises NaFePOF claim 1 , NaVPOF claim 1 , NaVCrPOF claim 1 , NaVO claim 1 , NaFe(CN) claim 1 , NaVPOF claim 1 , P2-Na[NiMn]O claim 1 , wherein (0 Подробнее

Номер записи: 83
11-08-2016 дата публикации

Bi-BASED SOLDER ALLOY, METHOD OF BONDING ELECTRONIC COMPONENT USING THE SAME, AND ELECTRONIC COMPONENT-MOUNTED BOARD

Номер: US20160234945A1
Автор: Hiroaki Nagata
Принадлежит: SUMITOMO METAL MINING CO LTD

Provided is a Bi-based solder alloy containing a specific amount of Al in Bi—Ag and having particles including a Ag—Al intermetallic compound dispersed therein, a method of bonding a Ag-plated electronic component, a bare Cu frame electronic component, an Ni-plated electronic component, or the like using the same, and an electronic component-mounted board. A Bi-based solder alloy includes Ag and Al, is substantially free of Pb, and has a Bi content of 80 mass % or more, a solidus of a melting point of 265° C. or more, and a liquidus of 390° C. or less. A content of Ag is 0.6 to 18 mass %, a content of Al is 0.1 to 3 mass %, the content of Al is 1/20 to 1/2 of the content of Ag, and particles including a Ag—Al intermetallic compound are dispersed in the solder alloy.

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Номер записи: 84
16-08-2018 дата публикации

Formation of P-Type Filled Skutterudite by Ball-Milling and Thermo-Mechanical Processing

Номер: US20180233647A1
Автор: Chen Gang, Jie Qing, Ren Zhifeng
Принадлежит:

A method of manufacturing a thermoelectric material comprising: ball-milling a compound comprising a plurality of components, the first component M comprising at least one of a rare earth metal, an actinide, an alkaline-earth metal, and an alkali metal, the second component T comprising a metal of subgroup VIII, and the third component X comprises a pnictogen atom. The compound may be ball-milled for up to 5 hours, and then thermo-mechanically processed by, for example, hot pressing the compound for less than two hours. Subsequent to the thermo-mechanical processing, the compound comprises a single filled skutterudite phase with a dimensionless figure of merit (ZT) above 1.0 and the compound has a composition following a formula of MTX. 1. A thermoelectric compound comprising:{'sub': 4', '12, 'a figure of merit (ZT) above 1.0, the thermoelectric compound having a formula of MTX.'}2. The compound of claim 1 , wherein the first component M comprises at least one of a rare earth metal claim 1 , an actinide claim 1 , an alkaline-earth metal and an alkali metal.3. The compound of claim 1 , wherein the second component T comprises a metal of subgroup VIII.4. The compound of claim 1 , wherein the third component X comprises a pnictogen atom.5. The compound of claim 1 , wherein the compound comprises particles having an average grain size from about 200 nm to about 800 nm.6. The compound of claim 1 , wherein the compound comprises particles having an average grain size from about 200 nm to about 500 nm.7. The compound of claim 1 , having a power factor above 20 μW Kcmabove about 400K.8. The compound of claim 1 , having a Seebeek coefficient above about 120 μV Kabove about 400K.9. The compound of claim 1 , wherein M comprises neodynium (Nd) and cerium (Ce).10. The compound of claim 1 , wherein the figure of merit (ZT) above 1.0 is at a temperature greater than about 750K.11. A thermoelectric compound comprising:{'sub': 4', '12, 'a figure of merit (ZT) above 1.0, the ...

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Номер записи: 85
03-09-2015 дата публикации

MIXED ALLOY SOLDER PASTE

Номер: US20150246417A1
Автор: LEE NING-CHENG, ZHANG Hongwen
Принадлежит: Indium Corporation

A solder paste consists of an amount of a first solder alloy powder between 44 wt % to less than 60 wt %; an amount of a second solder alloy powder between greater than 0 wt % and 48 wt %; and a flux; wherein the first solder alloy powder comprises a first solder alloy that has a solidus temperature above 260° C.; and wherein the second solder alloy powder comprises a second solder alloy that has a solidus temperature that is less than 250° C. In another implementation, the solder paste consists of an amount of a first solder alloy powder between 44 wt % and 87 wt %; an amount of a second solder alloy powder between 13 wt % and 48 wt %; and flux. 1. A solder paste , consisting of:an amount of a first solder alloy powder between 44 wt % to less than 60 wt %;an amount of a second solder alloy powder between greater than 0 wt % and 48 wt %; andflux;wherein the first solder alloy powder comprises a first solder alloy that has a solidus temperature above 260° C.; andwherein the second solder alloy powder comprises a second solder alloy that has a solidus temperature that is less than 250° C.2. The solder paste of claim 1 , wherein the second solder alloy has a solidus temperature between 230° C. and 250° C.3. The solder paste of claim 2 , wherein the second solder alloy comprises a Sn alloy claim 2 , a Sn—Sb alloy claim 2 , or a Sn—Sb—X (X═Ag claim 2 , Al claim 2 , Au claim 2 , Bi claim 2 , Co claim 2 , Cu claim 2 , Ga claim 2 , Ge claim 2 , In claim 2 , Mn claim 2 , Ni claim 2 , P claim 2 , Pd claim 2 , Pt claim 2 , or Zn) alloy.4. The solder paste of claim 1 , wherein the second solder alloy has a solidus temperature between 200° C. and 230° C.5. The solder paste of claim 4 , wherein the second solder alloy comprises a Sn—Ag alloy claim 4 , a Sn—Cu alloy claim 4 , a Sn—Ag—X (X═Al claim 4 , Au claim 4 , Bi claim 4 , Co claim 4 , Cu claim 4 , Ga claim 4 , Ge claim 4 , In claim 4 , Mn claim 4 , Ni claim 4 , P claim 4 , Pd claim 4 , Pt claim 4 , Sb claim 4 , or Zn) alloy ...

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Номер записи: 86
26-08-2021 дата публикации

IMPROVED WELL SEALING MATERIAL AND METHOD OF PRODUCING A PLUG

Номер: US20210262313A1
Автор: EDEN Robert, Oluleke Joseph
Принадлежит: Rawwater Engineering Limited

Bismuth-based alloys and the use of plugs made from such alloys to seal wells as well as the plugs themselves are provided. There is provided an alloy of bismuth, tin, and antimony comprising at least about 50% by weight bismuth, about 30 to about 35% by weight tin, and about 1.8 to about 2.8% by weight antimony; and an alloy of bismuth and silver comprising about 91 to about 97% by weight bismuth and about 3 to about 9% by weight silver. There is also provided a method for producing a plug comprising an alloy of bismuth, tin, and antimony; and a method for producing a plug comprising an alloy of bismuth and silver; wherein a length of a well is filled with the molten alloy and the molten alloy is allowed to solidify. 1. An alloy composition of bismuth , tin , and antimony , comprising at least 50% by weight bismuth , 30 to 35% by weight tin , and 1.8 to 2.5% by weight antimony.2. An alloy composition according to claim 1 , comprising at least about 60% by weight bismuth.3. An alloy composition according to comprising about 65% by weight bismuth.4. An alloy composition according to comprising about 31 to about 33% by weight tin.5. An alloy composition according to comprising about 32% by weight tin.6. An alloy composition according to comprising about 2.0 to about 2.6% by weight antimony.7. An alloy composition according to comprising about 2.1 to about 2.4% by weight antimony.8. An alloy composition according to comprising about 2.28% by weight antimony.9. A plug comprising an alloy of .10. A plug according to for sealing a well.11. A plug according to wherein the well is an oil or petrochemical well.12. A method of forming a plug in a well comprising the alloy of claim 10 , wherein a length of the well is filled with a molten alloy of and then allowed to solidify.13. Use of a bismuth alloy for sealing a well claim 10 , wherein the bismuth alloy comprises bismuth claim 10 , tin and antimony.14. Use of a bismuth alloy for sealing a well according to claim 13 , ...

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Номер записи: 87
23-08-2018 дата публикации

WRITING INSTRUMENT AND RELATED PRODUCTION METHOD

Номер: US20180237652A1
Автор: BETTANCINI Andrea
Принадлежит:

Writing instrument () comprising a writing element () having a body () delimited by an end () coated with a metal material suitable to trace signs on paper through oxidation, and method for producing the writing element (). 120110121410162021222321242616222823. Writing element () for a writing instrument () comprising an elongated member/stem () having a grip portion () longitudinally delimited by an end portion (); said stem () having a longitudinal cavity () of given extension; said writing element () having a body () delimited by an end () provided with a point () suitable , in use , to draw signs on paper through oxidation; said body () having an elongated coupling portion () provided with respective connecting means () suitable to engage said cavity (); characterized in that said end () is covered by a cover () comprising said point () and is made of a bi-component metal alloy comprising bismuth and tin.2. Element according to claim 1 , characterized in that said metal alloy comprises a bismuth concentration of 77% and a tin concentration of 23%.3. Element according to claim 2 , characterized in that said metal alloy comprises a bismuth concentration comprised between 60% and 80% claim 2 , and a tin concentration comprised between 40% and 20%.421. Element according to claim 1 , characterized in that said body () is made of composite material.52616. Element according to claim 1 , characterized in that said connecting means () are suitable to engage said cavity () in a screw-like manner.62616. Element according to claim 1 , characterized in that said connecting means () are suitable to engage said cavity () in a snap-like manner.72616. Element according to claim 1 , characterized in that said connecting means () are suitable to engage said cavity () in a bayonet-like manner.82224262225. Element according to claim 5 , characterized in that said end () is hollow inside claim 5 , and in that said elongated portion () comprises a threaded stalk () ending inside said ...

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Номер записи: 88
24-08-2017 дата публикации

High Activity Pt-Bi Catalyst for Dimethyl Ether Electro-Oxidation

Номер: US20170244112A1
Автор: Angelopoulos Anastasios
Принадлежит:

Provided are processes for preparing a thermodynamically stable PtBialloy nanoparticle. In certain aspects, the process comprises preparing an aqueous mixture, with the aqueous mixture comprising: an inorganic compound comprising SnCl; an inorganic compound comprising Bi; and HCl. The process further comprises adding PtClto the mixture. The process results in the spontaneous reduction of Bi and Pt. Excess SnClis adsorbed as a ligand at the surface of the PtBalloy nanoparticle, which serves to stabilize the nanoparticle. Another aspect provides a thermodynamically stable PtBinanoparticle. The nanoparticle comprises a core comprising a PtBialloy. The nanoparticle further comprises a shell at least partially encapsulating the core, with the shell comprising stannous chloride. The thermodynamically stable PtBnanoparticle has a negative charge. 1. A process for preparing a thermodynamically stable PtBialloy nanoparticle , the process comprising: [{'sub': '2', 'an inorganic compound comprising SnCl;'}, 'an inorganic compound comprising Bi; and', 'HCl; and, 'preparing an aqueous mixture comprising{'sub': '4', 'adding PtClto the mixture;'}{'sub': 2', '2, 'wherein the process results in the spontaneous reduction of Bi and Pt and wherein excess SnCladsorbs as a ligand at the surface of the PtBalloy nanoparticle to stabilize the nanoparticle.'}2. The process of claim 1 , wherein the inorganic compound comprising bismuth is selected from BiOor BiCl.3. The process of claim 1 , wherein the inorganic compound comprising bismuth is selected from a solution of BiOin HCl or a BiClsolution.4. The process of claim 1 , wherein the SnClis SnCl.2HO.5. The process of claim 1 , wherein the inorganic compound comprising SnClis a solution comprising SnCland HCl.6. The process of claim 1 , wherein the PtClis a solution comprising PtCland HCl.7. The process of claim 1 , wherein the process does not comprise high temperature annealing.8. The process of claim 1 , wherein the process comprises a ...

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Номер записи: 89
10-09-2015 дата публикации

(Zr,Hf)3Ni3Sb4-BASED n-TYPE THERMOELECTRIC CONVERSION MATERIAL

Номер: US20150255695A1
Автор: KANNO Tsutomu, Kusada Hideo, Sakai Akihiro, Takahashi Kohei, TAMAKI Hiromasa, YAMADA Yuka
Принадлежит:

An n-type thermoelectric conversion material expressed in a chemical formula XX′TCuSb(0≦x<3, 0≦y<3.0, and x+y>0), the X includes one or more element(s) of Zr and Hf, the X′ includes one or more element(s) of Nb and Ta, and the T includes one or more element(s) selected from Ni, Pd, and Pt, while including at least Ni, the n-type thermoelectric conversion material expressed in the chemical formula XX′TCuSbhas symmetry of a cubic crystal belonging to a space group I-43d. 1. An n-type thermoelectric conversion material expressed in a chemical formula XX′TCuSb(0≦x<3 , 0≦y<3.0 , and x+y>0) , whereinthe X comprises one or more element(s) of Zr and Hf,the X′ comprises one or more element(s) of Nb and Ta,the T comprises one or more element(s) selected from Ni, Pd, and Pt, while including at least Ni, and{'sub': 3-x', 'x', '3-y', 'y', '4, 'the material expressed in the chemical formula XX′TCuSbhas symmetry of a cubic crystal belonging to a space group I-43d.'}2. The n-type thermoelectric conversion material according to claim 1 , wherein a total of the x and the y is in a range 0.055≦x+y≦1.1.3. The n-type thermoelectric conversion material according to claim 1 , wherein the total of the x and the y is in a range 0.05≦x+y≦0.7.4. The n-type thermoelectric conversion material according to claim 1 , wherein the total of the x and the y is in a range 0.2≦x+y≦0.5.5. The n-type thermoelectric conversion material of according to claim 1 , wherein the x is zero.6. A production method of an n-type thermoelectric conversion material claim 1 , comprising:{'sub': 3-x', 'x', '3-y', 'y', '4', '3-x', 'x', '3-y', 'y', '4, '(1) a first step of weighing raw materials comprising one or more element(s) (X) of Zr and Hf, one or more element(s) (X′) of Nb and Ta, and one or more element(s) (T) selected from Ni, Pd, and Pt, while including at least Ni, Cu, and Sb for amounts corresponding to stoichiometric ratios in a chemical formula XX′TCuSb(0≦x<3, 0≦y<3, and x+y>0), the material expressed in the ...

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Номер записи: 90
31-08-2017 дата публикации

ELECTRODE, PREPARATION METHOD THEREFOR, AND USES THEREOF

Номер: US20170247269A1
Автор: FENG Ruizhi, Tan Yan
Принадлежит:

An electrode, a preparation method therefor, and uses thereof. Titanium or titanium alloy is used as a base material of the electrode, the outer surface of the base material is coated with a composite material coating, and the composite material coating is prepared by coating a composite material solution and carrying out drying and sintering. The composite material solution is a nanoscale solution formed by dissolving transition metal elements in ethanol. The nanoscale solution is an ethanol solution of the nanoscale transition metal with particles of the transition metal as solutes thereof. The transition metal elements are platinum, iridium, ruthenium, gold, cerium, rhodium, tantalum, manganese, nickel, palladium, yttrium, gadolinium, cobalt, europium, lanthanum, neodymium, zirconium and titanium, and the molar ratio of the transition metal elements platinum, iridium, ruthenium, gold, cerium, rhodium, tantalum, manganese, nickel, palladium, yttrium, gadolinium, cobalt, europium, lanthanum, neodymium, zirconium and titanium in the composite material solution is 5-15:23-34:14-21:1-7:9-17:3-12:15-27:3-6:2-9:10-23:15-27:2-8:15-30:3-12:4-14:1-10:6-15:20-50. 1. An electrode , comprising a titanium or titanium alloy substrate , the outer surface of the substrate is coated with a layer of composite material coating , the composite material coating is prepared by coating a composite material solution , then drying and sintering , wherein the composite material solution is a nanoscale solution formed by dissolving transition metal elements in ethanol , the particles of the transition metal elements are taken as the solute of the nanoscale solution , the transition metal elements are platinum , iridium , ruthenium , gold , cerium , rhodium , tantalum , manganese , nickel , palladium , yttrium , gadolinium , cobalt , europium , lanthanum , neodymium , zirconium and titanium , the molar ratio of the transition metal elements platinum , iridium , ruthenium , gold , cerium , ...

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Номер записи: 91
17-09-2015 дата публикации

SOLDER ALLOY FOR DIE BONDING

Номер: US20150258637A1
Автор: ASAGI Takeshi, Mitani Susumu, Shimoda Masayoshi, WATANABE Hirohiko
Принадлежит:

An object of the invention is to provide a lead-free solder for die bonding having a high heat resistance temperature and an improved wetting property. Provided are a solder alloy for die bonding which contains 0.05% by mass to 3.0% by mass of antimony and the remainder consisting of bismuth and inevitable impurities, and a solder alloy for die bonding which contains 0.01% by mass to 2.0% by mass of germanium and the remainder consisting of bismuth and inevitable impurities. 1. A solder alloy for die bonding comprising 0.05% by mass to 3.0% by mass of antimony and the remainder consisting of bismuth and inevitable impurities.2. The solder alloy according to claim 1 , further comprising 0.01% by mass to 1.0% by mass of germanium.3. The solder alloy according to claim 2 , wherein the solder alloy comprises 0.05% by mass to 1.0% by mass of antimony and 0.01% by mass to 0.2% by mass of germanium.4. The solder alloy according to claim 1 , further comprising 0.01% by mass to 0.1% by mass of nickel.5. The solder alloy according to claim 2 , further comprising 0.01% by mass to 0.1% by mass of nickel.6. The solder alloy according to claim 1 , further comprising 0.001% by mass to 0.1% by mass of phosphorus.7. The solder alloy according to claim 2 , further comprising 0.001% by mass to 0.1% by mass of phosphorus.8. The solder alloy according to claim 4 , further comprising 0.001% by mass to 0.1% by mass of phosphorus.9. The solder alloy according to claim 5 , further comprising 0.001% by mass to 0.1% by mass of phosphorus.10. A solder alloy for die bonding comprising 0.01% by mass to 2.0% by mass of germanium and the remainder consisting of bismuth and inevitable impurities.11. A solder paste comprising:{'claim-ref': {'@idref': 'CLM-00010', 'claim 10'}, 'the solder alloy for die bonding according to ; and'}a flux. 1. Technical FieldThe present invention relates to a solder alloy. More specifically, the present invention relates to an inexpensive lead-free high-temperature ...

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Номер записи: 92
27-11-2014 дата публикации

STABLE NANOCRYSTALLINE ORDERING ALLOY SYSTEMS AND METHODS OF IDENTIFYING SAME

Номер: US20140348203A1
Автор: Murdoch Heather A., Schuh Christopher A.
Принадлежит: Massachusetts Institute of Technology

Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. 1. A method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element , the method comprising:(A) determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and(B) identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase;wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.2. The method of claim 1 , wherein (A) further comprises calculating a free energy of formation of an intermetallic compound of the ordering binary alloy system as the first thermodynamic parameter.3. The method of ...

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Номер записи: 93
24-09-2015 дата публикации

NbFeSb-Based Half-Heusler Thermoelectric Materials and Methods of Fabrication and Use

Номер: US20150270465A1
Автор: Cleary Martin, Engber Michael, He Ran, Joshi Giri, Kozinsky Boris, Pantha Tej, Ren Zhifeng, Yang Jian
Принадлежит:

A thermoelectric half-Heusler material comprising niobium (Nb), iron (Fe) and antimony (Sb) wherein the material comprises grains having a mean grain size less than one micron. A method of making a nanocomposite half-Heusler thermoelectric material includes melting constituent elements of the thermoelectric material to form an alloy of the thermoelectric material, comminuting (e.g., ball milling) the alloy of the thermoelectric material into nanometer scale mean size particles, and consolidating the nanometer size particles to form the half-Heusler thermoelectric material comprising at least niobium (Nb), iron (Fe) and antimony (Sb) and having grains with a mean grain size less than one micron. 1. A thermoelectric half-Heusler material comprising:niobium (Nb), iron (Fe), and antimony (Sb), wherein the material comprises a mean grain size less than one micron.2. The thermoelectric material of claim 1 , further comprising tin (Sn) wherein a portion of the antimony (Sb) in the half-Heusler material is substituted with tin (Sn).3. The thermoelectric material of claim 1 , wherein the thermoelectric material further comprises at least one of titanium (Ti) claim 1 , zirconium (Zr) claim 1 , vanadium (V) claim 1 , tantalum (Ta) claim 1 , chromium (Cr) claim 1 , molybdenum (Mo) claim 1 , tungsten (W) claim 1 , cobalt (Co) claim 1 , and a rare earth element.4. The thermoelectric material of claim 3 , wherein the thermoelectric material comprises a composition according to the formula NbTiZrFeSb claim 3 , where x+y+q=1.5. The thermoelectric material of claim 3 , wherein the thermoelectric material comprises a composition according to the formula NbTiFeSb claim 3 , wherein x+y=1.6. The thermoelectric material of claim 3 , wherein the rare earth element comprises at least one of scandium (Sc) and yttrium (Y).7. The thermoelectric material of claim 1 , further comprising titanium (Ti).8. The thermoelectric material of claim 1 , further comprising cobalt (Co).9. The thermoelectric ...

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Номер записи: 94
22-08-2019 дата публикации

HIGH IMPACT SOLDER TOUGHNESS ALLOY

Номер: US20190255662A1
Автор: Chattopadhyay Kamanio, Chegudi Sujatha, de Avila Ribas Morgana, Kumar Anil K. N., Lodge Dominic, Pandher Ranjit, Sarkar Siuli, Singh Bawa
Принадлежит: ALPHA ASSEMBLY SOLUTIONS INC.

A lead-free solder alloy comprising from 35 to 59 wt % Bi; from to wt % Ag; from to 0.4 wt % Cu; from to 0.5 wt % Co; and the balance Sn, together with any unavoidable impurities. 1. A lead-free solder alloy , comprising:from 35 to 50 wt % Bi;from 0 to 1.0 wt % Ag;from 0 to 1.0 wt % Cu;from 0 to 0.5 wt % Co;and the balance Sn, together with any unavoidable impurities.2. The alloy as claimed in wherein the Bi is present in a concentration between 35 and 45 wt %.3. The alloy as claimed in wherein the Cu is present in a concentration between 0.05 and 0.4 wt %.4. The alloy as claimed in wherein the Cu is present in a concentration between 0.1 and 0.3 wt %.5. The alloy as claimed in wherein the Co is present in a concentration between 0.003 and 0.5 wt %.6. The alloy as claimed in wherein the Co is present in a concentration between 0.01 and 0.07 wt %.7. The alloy as claimed in wherein the Co is present in a concentration between 0.02 and 0.04 wt %.8. The lead-free solder alloy of consisting of:from 35 to 50 wt % Bi;from 0 to 1.0 wt % Ag;from 0 to 1 wt % Cu;from 0 to 0.5 wt % Co;and the balance Sn, together with any unavoidable impurities.9. The alloy as claimed in wherein the Bi is present in a concentration between 35 and 45 wt %.10. The alloy as claimed in wherein the Cu is present in a concentration between 0.05 and 0.4 wt %.11. The alloy as claimed in wherein the Cu is present in a concentration between 0.1 and 0.3 wt %.12. The alloy as claimed in wherein the Co is present in a concentration between 0.003 and 0.5 wt %.13. The alloy as claimed in wherein the Co is present in a concentration between 0.01 and 0.07 wt %.14. The alloy as claimed in wherein the Co is present in a concentration of about 0.03 wt %.15. The alloy as claimed in wherein:the Cu is present in a concentration between 0.1 and 0.3 wt %; andthe Co is present in a concentration between 0.02 and 0.04 wt %.16. A lead-free solder alloy claim 8 , comprising:from 35 to 59 wt % Bi;from 0 to 1.0 wt % Ag;from ...

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Номер записи: 95
21-09-2017 дата публикации

HYBRID LEAD-FREE SOLDER WIRE

Номер: US20170266765A1
Автор: LEE NING-CHENG, ZHANG Hongwen
Принадлежит: Indium Corporation

A lead—free solder wire includes a core wire with a first alloy and a shell coating layer with a second alloy. The first alloy may be composed of Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy may be composed of Sn, In Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the shell coating layer is applied to a surface of the core wire. In another implementation, the lead free solder wire may include a first wire with a first alloy and a second wire with a second alloy. The first alloy may be composed of Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy may be composed of Sn, Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the first alloy of the first wire and the second alloy of the second wire are braided together.

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Номер записи: 96
22-08-2019 дата публикации

STABLE NANOCRYSTALLINE ORDERING ALLOY SYSTEMS AND METHODS OF IDENTIFYING SAME

Номер: US20190257775A1
Автор: Murdoch Heather A., Schuh Christopher A.
Принадлежит: Massachusetts Institute of Technology

Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase. 144-. (canceled)45. An alloy comprising:a solvent element and a solute element;the alloy comprising at least one of Ag—Sc, Ag—La, Ag—Y, Ba—Pd, Ba—Pt, Be—Ti, Bi—Pd, Ca—Pt, Cd—Pd, Co—Al, Co—As, Co—Ga, Co—Ge, Co—Hf, Co—Nb, Co—Sc, Co—Ta, Co—Ti, Co—Y, Co—Zr, Cr—Pt, Fe—Al, Fe—As, Fe—Hf, Fe—Sc, Fe—Zr, Hf—Ag, Hf—Bi, Hf—Co, Hf—Ni, Hf—Re, Hf—Tl, Ir—Cd, Ir—Cr, Ir—Ge, Ir—In, Ir—Mg, Ir—Mn, Ir—Sb, Ir—Zn, La—Ag, La—Au, La—Ir, La—Rh, La—Zn, Mn—Ga, Mn—Pd, Mn—Sb, Mo—Al, Mo—Ge, Mo—Pd, Nb—Co, Nb—Ga, Nb—Ni, Nb—Re, Nb—Sb, Nb—Sn, Nb—Zn, Ni—Ga, Ni—Ge, Ni—Hf, Ni—In, Ni—La, Ni—Mg, Ni—Nb, Ni—Ta, Ni—Th, Ni—Y, Ni—Zn, Os—As, Os—Ga, Os—Ge, Os—P, Os—V, Os—Y, Os—Zn, Pd—Mn, Pt—Bi, Pt—K, Pt—Mn, Pt—Na, Pt—Tl, Re—Al, Re—As, Re—Ga, Re—Ge, Re—Hf, Re—Nb, Re—Sc, Re—Ta, Re—Ti, Rh—Bi, Rh—Cd, Rh—In, Rh—Mg, Rh—Mn, Rh—Sb, Rh—Sn, Rh—Tl, Rh—Zn, Ru—Ga, Ru—Ge, Ru—La, Ru—Y, Ru—Zn, Sc—Ag, Sc—Ni, Sc—Os, Sc—Ru, Sc—Tc, Sn—Pd, Sr—Pd, Sr—Pt, Ta—Al, Ta—Fe, Ta—Ga, Ta—Ni, Ta—Re, Ta—Sb, Ta—Sn, Ta—Zn, Tc—Ge, Tc—La, Tc—Th, Tc—V, Tc—Y, Tc—Zn, Th—Ir, Th—Rh, Ti—Be, Ti—Bi, Ti—Cd, Ti—Co, Ti—In, Ti—Ni, Ti—Pb, Ti—Sn, Ti—Zn, V—Ga, V—Ru, V—Sb, V—Tc, W ...

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Номер записи: 97
01-10-2015 дата публикации

SOLDERING METHOD USING A LOW-TEMPERATURE SOLDER PASTE

Номер: US20150282332A1
Автор: HORI Takayuki, Shimamura Masato, Tachibana Ken
Принадлежит:

Even if the strength of a solder composition close to a SnBi eutectic composition was improved, it was brittle, so when it was used for small electronic devices such as mobile phones or notebook computers, the resistance to drop impacts when the small electronic equipment was dropped was low. Therefore, interface peeling often took place between the soldered surface and a printed circuit board, resulting in the devices being destroyed. As disclosed, when soldering using a solder paste containing a SnBi-based low-temperature solder, at least one type of solder composition selected from a Sn—Ag, a Sn—Cu, and a Sn—Ag—Cu solder composition is diffused into the solder paste by simultaneously supplying at least one type of preform selected from a Sn—Ag, a Sn—Cu, and a Sn—Ag—Cu solder composition, whereby resistance to drop impacts is improved. 1. A soldering method using a SnBi-based low-temperature solder paste , wherein at least one type of preform selected from a Sn—Ag , Sn—Cu , and Sn—Ag—Cu solder composition is supplied to atop a printed solder paste to diffuse at least one solder composition selected from a Sn—Ag , a Sn—Cu , and a Sn—Ag—Cu solder composition into a SnBi-based low-temperature solder.2. A soldering method using a solder paste as set forth in wherein the soldering method using a solder paste made of a SnBi-based low-temperature solder uses a low-temperature solder paste made by mixing a solder powder having a composition of at least 35% and at most 60% of Bi and a remainder of Sn or a solder powder of the foregoing composition to which at most 3% of Ag is added with a flux.3. A soldering method using a solder paste as set forth in claim 1 , wherein the at least one type of preform selected from a Sn—Ag claim 1 , a Sn—Cu claim 1 , and a Sn—Ag—Cu solder composition is at least one type of preform selected from a preform having a composition of at least 0.3 to at most 4.0 mass % of Ag and a remainder of Sn claim 1 , a preform having a composition of at ...

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Номер записи: 98
29-08-2019 дата публикации

HIGH IMPACT SOLDER TOUGHNESS ALLOY

Номер: US20190262951A1
Автор: Chattopadhyay Kamanio, Chegudi Sujatha, de Avila Ribas Morgana, Kumar Anil K. N., Lodge Dominic, Pandher Ranjit, Sarkar Siuli, Singh Bawa
Принадлежит: ALPHA ASSEMBLY SOLUTIONS, INC.

A lead-free solder alloy comprising from 35 to 59 wt % Bi; from 0 to 1.0 wt % Ag; from 0 to 1 wt % Cu; from 0 to 0.5 wt % Co; from 0.0001 to 1.0% Sb; and the balance Sn, together with any unavoidable impurities. 1. A lead-free solder alloy , comprising:from 35 to 59 wt % Bi;from Oto 1.0 wt % Ag;from 0 to 1 wt % Cu;from 0 to 0.5 wt % Co;from 0.0001 to 1.0% Sb;and the balance Sn, together with any unavoidable impurities.2. The alloy as claimed in wherein the Bi is present in a concentration between 35 and 55 wt %.3. The alloy as claimed in wherein the Bi is present in a concentration between 35 and 45 wt %.4. The alloy as claimed in wherein the Bi is present in a concentration between 57 to 59 wt %.5. The alloy as claimed in wherein the Cu is present in a concentration between 0.05 and 0.4 wt %.6. The alloy as claimed in wherein the Co is present in a concentration between 0.003 and 0.5 wt %.7. The alloy as claimed in wherein the Co is present in a concentration between 0.01 and 0.07 wt %.8. The alloy as claimed in wherein the Sb is present in a concentration between 0.0003 and 0.7 wt %.9. The alloy as claimed in wherein:the Bi is present in a concentration between 35 and 45 wt %; andthe Cu is present in a concentration between 0.05 and 0.4 wt %.10. The alloy as claimed in wherein:the Bi is present in a concentration between 35 and 55 wt %; andthe Co is present in a concentration between 0.003 and 0.5 wt %.11. The alloy as claimed in wherein:the Bi is present in a concentration between 35 and 55 wt %; andthe Co is present in a concentration between 0.01 and 0.07 wt %.12. The solder alloy of further comprising 0.01 to 0.5 wt % Ni.13. The solder alloy of consisting of:from 35 to 50 wt % Bi;from 0 to 1.0 wt % Ag;from 0.1 to 0.3 wt % Cu;from 0.0001 to 1.0 wt % Sb;from 0.025 to 0.05 wt % Ni;and the balance Sn, together with any unavoidable impurities.14. The alloy of consisting of:from 35 to 59 wt % Bi;from 0 to 1.0 wt % Ag;from 0 to 1 wt % Cu;from 0 to 0.5 wt % Co;from 0. ...

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Номер записи: 99
25-12-2014 дата публикации

FORMATION OF P-TYPE FILLED SKUTTERUDITE BY BALL-MILLING AND THERMO-MECHANICAL PROCESSING

Номер: US20140377120A1
Автор: Jie Qing, Ren Zhifeng
Принадлежит:

A method of manufacturing a thermoelectric material comprising: ball-milling a compound comprising a plurality of components, the first component M comprising at least one of a rare earth metal, an actinide, an alkaline-earth metal, and an alkali metal, the second component T comprising a metal of subgroup VIII, and the third component X comprises a pnictogen atom. The compound may be ball-milled for up to 5 hours, and then thermo-mechanically processed by, for example, hot pressing the compound for less than two hours. Subsequent to the thermo-mechanical processing, the compound comprises a single filled skutterudite phase with a dimensionless figure of merit (ZT) above 1.0 and the compound has a composition following a formula of MTX. 1. A method of manufacturing a thermoelectric material comprising:{'sub': 4', '12, 'thermo-mechanically processing a ball-milled compound, wherein the compound comprises a first component M, a second component T, and a third component X, wherein, subsequent to the thermo-mechanical processing, the compound comprises a dimensionless figure of merit (ZT) above 1.0, and is a composition having the formula of MTX.'}2. The method of claim 1 , further comprising thermo-mechanically processing the compound for less than two hours.3. The method of claim 1 , wherein the compound is in an as-cast state prior to ball-milling.4. The method of claim 1 , wherein the first component M comprises at least one of a rare earth metal claim 1 , an actinide claim 1 , an alkaline-earth metal claim 1 , and an alkali metal.5. The method of claim 1 , wherein the second component T comprises at least one metal of subgroup VIII.6. The method of claim 1 , wherein the third component X comprises at least one pnictogen.7. The method of claim 1 , further comprising ball-milling compound from about one hour to about five hours.8. The method of claim 1 , further comprising thermo-mechanically processing the compound using hot-pressing.9. The method of claim 7 , ...

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Номер записи: 100