06-05-1970 дата публикации
Номер: GB1191002A
1,191,002. Semi-conductor devices; capacitors; inductors. TEXAS INSTRUMENTS Inc. 19 May, 1967 [23 May, 1966], No. 23432/67. Headings H1K, H1M and HIT. in a manufacturing process for semi-conductor devices the crystallographic structure of a semi-conductor substrate 2, Fig. 1, is altered at selected areas by directing a localized beam of energy 16 on to the selected areas. The substrate 2 is exposed to a vaporous reactant material which results in epitaxial deposition of material only on to those portions of the substrate 2 unaffected by the energy beam 16. The beam 16 may be from a laser, but as shown, it comprises electrons. The substrate 2 may, for example, comprise a II-VI or III-V compound and in one embodiment it consists of GaAs which is selectively irradiated to evaporate off As from the irradiated areas, leaving Ga-rich regions which are incompatible with subsequent epitaxial deposition of GaAs, so that deposition occurs only on the non-irradiated areas. The epitaxial deposition may take place into cavities in the substrate surface. The invention may be used in conjunction with the method of U.K. Specification 1,165,016, in which a beam of energy is used to produce local protuberances on a monocrystalline semiconductor substrate. An integrated circuit includes transistors T 1 , T 2 , Fig. 7, and resistors R 1 , R 2 formed in N-type epitaxial bodies 30-33, Figs. 2 and 4, deposited in the above manner on a P-type Si substrate 2. P-type regions 41a, 41b, 41c and N-type regions such as 42 may be diffused into the bodies 30-33 by passing the vapours of suitable impurity sources such as BCl 3 , BBr 3 , B 2 H 6 , B 2 O 3 , PCl 3 or P 2 O 5 over the bodies 30-33 while areas thereof are selectively heated to a diffusing temperature using the electron beam. The supply of the impurity source may be controlled automatically by monitoring secondary emission from the bodies 30-33, since this will vary according to the dopant concentration. Ion bombardment may ...
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