19-03-2020 дата публикации
Номер: US20200086305A1
The invention concerns a process for preparing a copper-comprising SAPO material with AFX structure, comprising at least the steps of mixing, in an aqueous medium, at least one aluminum source, at least one silicon source, at least one copper source, at least one phosphorus source, a TETA complexing agent and a TMHD structuring agent, in order to obtain a gel, and hydrothermal treatment of said gel with a shear rate of less than 50 sin order to obtain crystallization of said copper-comprising SAPO material with AFX structure. 1. A process for preparing a copper-comprising SAPO material with AFX structure , comprising at least the following steps: {'br': None, 'i': a', ':b', ':c', ':d', 'e', ':f', 'g, 'sub': 2', '2', '3', '2', '5', '4', '2, 'SiOAlOPOTMHD:CuSOTETA:HO'}, 'a) mixing, in an aqueous medium, of at least one aluminum source, at least one silicon source, at least one copper source, at least one phosphorus source, a complexing agent, TETA, and a structuring agent, TMHD, in order to obtain a gel of formulaa/c being between 0.1 and 1, b/c being between 0.1 and 1, g/c being between 1 and 100, d/c being between 0.5 and 4, e/c being between 0.005 and 0.1 and f/e being between 1 and 1.5;{'sup': '−1', 'b) hydrothermal treatment of said gel at a temperature of between 170 and 220° C., under an autogenous reaction pressure, for a period of between 1 and 3 days with a shear rate of less than 50 sin order to obtain the crystallization of said copper-comprising SAPO material with AFX structure.'}2. The process as claimed in claim 1 , wherein said step b) is carried out at a temperature of between 190 and 210° C.3. The process as claimed in claim 1 , wherein said step b) is carried out for a period of between 1 and 2 days.4. The process as claimed in claim 1 , wherein said step b) is carried out in the absence of stirring.5. The process as claimed in claim 1 , said step b) is carried out with a shear rate of between 0.1 and 50 s.6. The process as claimed in claim 1 , ...
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