CMOS-Bolometer

Ein Verfahren für das Herstellen einer Halbleitereinrichtung beinhaltet das Bilden wenigstens einer Opferschicht auf einem Substrat während eines komplementären Metalloxid-Halbleiter-(CMOS-)Prozesses. Eine Absorberschicht wird auf der Oberfläche der wenigstens einen Opferschicht abgelagert. Ein Teilbereich der wenigstens einen Opferschicht unterhalb der Absorberschicht wird entfernt, um eine Lücke zu bilden, über welche ein Teilbereich der Absorberschicht aufgehängt ist. Die Opferschicht kann ein Oxid des CMOS-Prozesses sein, wobei das Oxid entfernt wird, um die Lücke zu bilden, wobei ein selektiver Wasserstoff-Fluorsäure-Dampf-Trockenätz-Freigabeprozess benutzt wird. Die Opferschicht kann auch eine Polymerschicht sein, wobei die Polymerschicht entfernt wird, um die Lücke zu bilden, wobei ein O2-Plasma-Ätzprozess benutzt wird.

Visible and infrared dual mode imaging system

DEVICE HAVING A MEMBRANE STRUCTURE FOR DETECTING THERMAL RADIATION, METHOD OF PRODUCTION AND USE OF THE DEVICE

CONDUCTION STRUCTURE FOR INFRARED MICROBOLOMETER SENSORS

SEMICONDUCTOR FILM BOLOMETER THERMAL INFRARED DETECTOR

A thermal infrared detector comprising a dielectric pellicle (5) suspended over a cavity in a substrate (6), the pellicle supporting a detector element (1) comprising a heat sensitive semiconductor layer (3) between a pair of thin film metallic contacts (2, 4), these being deposited on the pellicle, the cavity being formed by etching and removal of the substrate material through holes or slots (8) in the surface of the substrate.

SURFACE MICRO-MACHINED INFRARED SENSOR USING INTERFEROMETRIC ABSORBER WITH HIGH TEMPERATURE STABILITY

A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having front and rear surfaces. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, and the thin-film absorber is substantially parallel to the reflector. According to an embodiment of the present invention, wafer bonding technology is simplified to allow a high temperature process after making the reflector. COPYRIGHT KIPO 2016 (210) Rule of a CMOS transistor (220) Injection of a reflecting material (230) Forming polysilicon of a thermophile(TP) (240) Depositing a metal contact part for TP and MOS and a thin film absorber (250) SiO_2 passivation (260) Release step and a second metal contact part ...

TWO STAGE TRANSFORMER COUPLING FOR ULTRA-SENSITIVE BOLOMETER TYPE RADIATION SENSOR

A bolometer type ultra-sensitive silicon sensor including a detector stage (14), an intermediate stage (16), and a heat bath stage (17). The detector stage, the intermediate stage and a portion of the heat bath stage are generally co-planar and are interconnected by I-beam bridges so as to permit mutually co-planar rotation. Mechanical and electrical coupling is improved between a micro-antenna and the detector stage by a two stage transformer assembly (L1-L2, L5-L6) coupled between the micro-antenna and a detector element of the detector stage.

Thermoelectric-based Infrared Detector having a Cavity and a MEMS Structure Defined by BEOL Metals Lines

Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

УСТРОЙСТВО С МЕМБРАННОЙ КОНСТРУКЦИЕЙ ДЛЯ ОБНАРУЖЕНИЯ ТЕПЛОВОГО ИЗЛУЧЕНИЯ, СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ И ИСПОЛЬЗОВАНИЯ

1. Устройство (1) обнаружения теплового излучения, содержащее: ! - по меньшей мере одну мембрану (11), на которой расположен по меньшей мере один датчик (111) тепла для преобразования теплового излучения в электрический сигнал; ! - по меньшей мере одну подложку (12) контура, несущую мембрану, и по меньшей мере один считывающий контур (121) для считывания электрического сигнала, ! и при этом датчик электрически связан через мембрану со считывающим контуром посредством сквозного контакта (120). ! 2. Устройство по п.1, отличающееся тем, что подложка контура и мембрана расположены относительно друг друга так, что между ними имеется по меньшей мере одна полость (15), ограниченная подложкой контура и мембраной. ! 3. Устройство по любому из пп.1 и 2, отличающееся тем, что: ! - предусмотрена по меньшей мере одна крышка для закрытия датчика; ! - подложка контура, мембрана и крышка уложены в стопу так, что мембрана находится между подложкой контура и крышкой. ! 4. Устройство по п.3, отличающееся тем, что мембрана и крышка расположены друг относительно друга так, что между ними имеется по меньшей мере одна полость (14). ! 5. Устройство по п.2, отличающееся тем, что полости, со стороны контура и/или крышки, вакуумированы или выполнены с возможностью их вакуумирования. ! 6. Устройство по любому из пп.4 и 5, отличающееся тем, что полости со стороны крышки и со стороны контура соединены между собой отверстием (114) в мембране. ! 7. Устройство по п.4 или 5, отличающееся тем, что для прохода теплового излучения к датчику в мембране, подложке контура и/или крышке имеется по меньшей мере одно окно (17) для прохода излучения с высокой прозрачностью для теплового излучения. ! 8. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2009 144 001 (13) A (51) МПК G01J 5/04 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2009144001/28, 28.05.2008 (71) Заявитель(и): ПАЙРИОС ЛТД. (GB) Приоритет(ы): (30) Конвенционный приоритет ...

БОЛОМЕТРИЧЕСКИЙ ПРИЕМНИК С ПОЛИМЕРНЫМ ТЕПЛОИЗОЛЯТОРОМ

Изобретение относится к области фотометрии, а именно к неохлаждаемым болометрам на основе тонкопленочных терморезистивных чувствительных элементов, изолированных от подложки, и способам их изготовления. Болометрический приемник содержит удлиненный тонкопленочный элемент из токопроводящего материала, размещенный на подложке и отделенный от нее теплоизолирующим слоем, выполненным из полимера с поперечными межмолекулярными связями и расположенным непосредственно на подложке. Теплопроводность полимера при этом ниже, чем теплопроводность подложки. Также болометр содержит токопроводящие контактные элементы, частично расположенные поверх концов указанного удлиненного тонкопленочного элемента из токопроводящего материала и имеющие с ним электрический и тепловой контакт. Изготовление такого болометра осуществляется методами планарной технологии и включает три этапа. На первом этапе на подложке формируется первый тонкопленочный элемент из полимера с поперечными межмолекулярными связями. На втором ...

CONDUCTION STRUCTURE FOR INFRARED MICROBOLOMETER SENSORS

A conduction structure for infrared microbolometer sensors and a method f or sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer (64) and a second conductor layer (68). The microbolometer further may include a bolometer layer (62) between the first conductor layer and the second conductor layer.

METHOD FOR MAKING AN ELECTROMAGNETIC RADIATION DETECTOR HAS MICROENCAPSULATION

Un procédé de fabrication d'un détecteur apte à détecter une gamme de longueurs d'onde [λ8 ; λ14] centrée sur une longueur d'onde λ10, le détecteur comprenant un dispositif de détection apte à détecter ladite gamme [λ8 ; λ14] et un boitier hermétique sous une pression prédéterminée dans laquelle est logé ledit dispositif, ledit boitier étant formé d'un substrat, de parois latérales solidaires du substrat et d'un capot supérieur solidaire des parois latérales et comprenant une partie au droit du dispositif qui est transparente dans ladite gamme [λ8 ; λ14], le procédé comprenant : - la réalisation dudit dispositif sur le substrat, ladite réalisation comprenant le dépôt d'une couche sacrificielle noyant totalement ledit dispositif ; - la réalisation du capot sur la couche sacrificielle, ledit capot étant constitué d'un empilement de première, seconde et troisième structures optiques transparentes dans ladite gamme [λ8 ; λ14], la seconde et la troisième structures optiques ayant des indices de réfraction équivalents à la longueur d'onde λ10 respectivement supérieur ou égal à 3,4 et inférieur ou égal à 2,3 ; - suite à la réalisation d'une partie du capot comprenant au moins la première structure optique, la réalisation d'un évent d'accès à la couche sacrificielle au travers de ladite partie du capot, suivie de l'application, au travers de l'évent, d'une gravure pour retirer en totalité la couche sacrificielle. l'épaisseur optique de la première structure optique est supérieure ou égale à λ10/10 ; l'indice de réfraction équivalent n1eq à la longueur d'onde λ10 de la première structure optique est inférieur ou égal à 2,6 ; et - la face de la première structure optique formée sur la couche sacrificielle, est inerte à la gravure mise en œuvre pour retirer la couche sacrificielle. A method of manufacturing a detector capable of detecting a range of wavelengths [λ8; λ14] centered on a wavelength λ10, the ...

Sealed Infrared Imagers

The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

INFRARED IMAGE SENSOR

An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

PATTERNED FOCAL PLANE ARRAYS OF CARBON NANOTUBE THIN FILM BOLOMETERS WITH HIGH TEMPERATURE COEFFICIENT OF RESISTANCE AND IMPROVED DETECTIVITY FOR INFRARED IMAGING

A method of preparation of focal plane arrays of infrared bolometers includes processing carbon nanotubes to increase a temperature coefficient of resistance (TCR), followed by patterning to form focal plane arrays for infrared imaging.

THERMAL SENSOR, THERMAL SENSOR ARRAY, ELECTRONIC APPARATUS INCLUDING THE THERMAL SENSOR, AND OPERATING METHOD OF THE THERMAL SENSOR

A thermal sensor, a thermal sensor array, an electronic apparatus including the thermal sensor, and an operating method of the thermal sensor are provided. The thermal sensor includes a first region onto which first infrared light is incident, a visible light radiation region configured to radiate visible light generated by incidence of the first infrared light on the first region, a second region onto which second infrared light is incident, and an image sensor configured to receive the visible light radiated from the visible light radiation region. The first region, the second region, and the visible light radiation region each include a nonlinear optical material.

TWO-STAGE TRANSFORMER CLUTCH FOR ULTRAEMPFINDLICHE BOLOMETER-WELL-BEHAVED RADIATION SENSORS

SEMICONDUCTOR FILM BOLOMETER THERMAL INFRARED DETECTOR

A thermal infrared detector comprising a dielectric pellicle (5) suspended over a cavity in a substrate (6), the pellicle supporting a detector element (1) comprising a heat sensitive semiconductor layer (3) between a pair of thin film metallic contacts (2, 4), these being deposited on the pellicle, the cavity being formed by etching and removal of the substrate material through holes or slots (8) in the surface of the substrate.

HIGH DYNAMIC DEVICE FOR INTEGRATING AN ELECTRIC CURRENT

MICROBOLOMETER ARRAY WITH IMPROVED PERFORMANCE

According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers (300) of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane (301) suspended above said supporting substrate, said membrane consisting of an element (305) for absorbing the incident radiation and a thermometric element (304) in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (311), a dielectric film (310), and a second metallic film (309), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band. The area of the microbolometer pixel covered by ...

High Dynamic Device for Integrating an Electric Current

A device of integration of an electric current received on an integration node, includes an operational amplifier, an integration capacitor, and a circuit for modifying an output voltage of the operational amplifier formed by a charge transfer circuit configured to be connected on the integration node and to transfer charges into the integration capacitor. The device also includes a comparison circuit configured to trigger the modification circuit at least once during the integration duration, and a storage circuit configured to store the number of triggerings which have occurred during the integration duration. The received electric current is calculated according to the output voltage as well as to the number of triggerings multiplied by the modification of the output voltage induced by the modification circuit.

УСТРОЙСТВО С МЕМБРАННОЙ КОНСТРУКЦИЕЙ ДЛЯ ОБНАРУЖЕНИЯ ТЕПЛОВОГО ИЗЛУЧЕНИЯ, СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ И ИСПОЛЬЗОВАНИЯ

FIELD: physics. SUBSTANCE: device has at least one membrane on which at least one thermal detector is mounted for the conversion of thermal radiation into an electric signal and at least one circuit support for carrying the membrane and at least one readout circuit for reading out the electric signal. The detector is electrically connected through the membrane to the readout circuit by a through-contact. The invention also relates to a method of making said device, comprising the following steps: taking a membrane with a detector and at least one electrical through-contact, as well as a circuit support and bringing together the membrane and the circuit support such that the through-contact passing through the membrane closes the electric circuit between the detector and the readout circuit. The device is preferably made in form of circuits on common wafers. Such functional silicon wafers are stacked, reliably connected and the separate ready devices are separated. The detectors used are preferably pyroelectric sensors. The disclosed device is used as a pressure sensor, a proximity sensor and a thermal imager. EFFECT: high accuracy and information content of thermal measurements. 15 cl, 2 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 468 346 (13) C2 (51) МПК G01J 5/10 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2009144001/28, 28.05.2008 (24) Дата начала отсчета срока действия патента: 28.05.2008 (73) Патентообладатель(и): ПАЙРИОС ЛТД. (GB) (43) Дата публикации заявки: 10.07.2011 Бюл. № 19 2 4 6 8 3 4 6 (45) Опубликовано: 27.11.2012 Бюл. № 33 (56) Список документов, цитированных в отчете о поиске: WO 2007054111 A1, 18.05.2007. WO 2007000172 A1, 04.01.2007. FR 2867273 A1, 09.09.2005. EP 1719988 A1, 05.11.2006. RU 2258207 C1, 10.08.2005. 2 4 6 8 3 4 6 R U (86) Заявка PCT: EP 2008/004246 (28.05.2008) C 2 C 2 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 29.12.2009 (87) Публикация заявки ...

HIGH DYNAMIC DEVICE FOR INTEGRATING AN ELECTRIC CURRENT

Semiconductor film bolometer thermal infrared detector

PCT No. PCT/AU91/00162 Sec. 371 Date Dec. 17, 1992 Sec. 102(e) Date Dec. 17, 1992 PCT Filed Apr. 24, 1991 PCT Pub. No. WO91/16607 PCT Pub. Date Oct. 31, 1991.A thermal infrared detector comprising a dielectric pellicle suspended over a cavity in a substrate, the pellicle supporting a detector element comprising a heat sensitive semiconductor layer between a pair of thin fim metallic contracts, these being deposited on the pellicle, the cavity being formed by etching and removal of the substrate material through holes or slots in the surface of the substrate.

Strahlungssensor

Conduction structure for infrared microbolometer sensors

A conduction structure for infrared microbolometer sensors and a method for sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer (64) and a second conductor layer (68). The microbolometer further may include a bolometer layer (62) between the first conductor layer and the second conductor layer.

Device having a membrane structure for detecting thermal radiation, method of production and use of the device

The invention relates to a device for detecting thermal radiation, comprising at least one membrane on which at least one thermal detector element for converting the thermal radiation to an electrical signal is arranged, and at least one circuit carrier for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being electrically interconnected through the membrane through an electrical via. The invention also relates to a method for producing said device by way of the following process steps: a) providing the membrane having the detector element and at least one electrical via and providing the circuit carrier, and b) uniting the membrane and the circuit carrier in such a manner that the detector element and the readout circuit are electrically interconnected through the membrane through an electrical via. The production is preferably carried out on the wafer level: Functionalized silicon substrates ...

DETECTOR BOLOMETRIQUE HAS PERFORMANCES AMELIOREES

WAFER LEVEL PACKAGING OF INFRARED CAMERA DETECTORS

An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity. 1. An infrared detector , comprising:a first substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof;a second substrate having side walls and a generally planar window spaced above the array, the window being substantially transparent to infrared light,wherein the side walls are disposed on an upper surface of the first substrate and define a closed cavity between the first and second substrates that enclose the array;a solder seal bonding a perimeter of the side walls of the second substrate to the first substrate so as to seal the cavity; andat least one solder capture ring fully disposed around and/or within a perimeter of the solder seal and disposed on the first substrate adjacent to the side walls.2. The infrared detector of claim 1 , further comprising a plurality of solder capture rings claim 1 , wherein at least one of the solder capture rings is fully disposed around an outer perimeter of the solder seal and at least one solder capture ring is fully disposed around an inner perimeter of the solder seal.3. The infrared detector of claim 1 , wherein the at least one solder capture ring is fully disposed around an outer perimeter of the solder seal.4. The ...

INFRARED IMAGING SENSOR

THIN FILM STRUCTURE FOR MICRO-BOLOMETER AND METHOD FOR FABRICATING THE SAME

Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in monoclinic VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.

INFRARED IMAGE SENSOR

L'invention concerne un capteur d'image infrarouge, comprenant sur un support (10) une pluralité de premiers pixels (32) et une pluralité de deuxièmes pixels (34) destinés à capter un rayonnement infrarouge émis par un élément d'une scène, chaque pixel comprenant une membrane bolométrique (14) suspendue au-dessus d'un réflecteur (12) recouvrant le support, le réflecteur de chaque premier pixel étant recouvert d'une première couche diélectrique (40), et le réflecteur de chaque deuxième pixel étant recouvert d'une deuxième couche diélectrique (42) différente de la première couche diélectrique par ses propriétés optiques.

INFRARED IMAGING SENSOR

L'invention concerne un capteur d'image infrarouge, comprenant sur un support (10) une pluralité de premiers pixels (32) et une pluralité de deuxièmes pixels (34) destinés à capter un rayonnement infrarouge émis par un élément d'une scène, chaque pixel comprenant une membrane bolométrique (14) suspendue au-dessus d'un réflecteur (12) recouvrant le support, le réflecteur de chaque premier pixel étant recouvert d'une première couche diélectrique (40), et le réflecteur de chaque deuxième pixel étant recouvert d'une deuxième couche diélectrique (42) différente de la première couche diélectrique par ses propriétés optiques.

DETECTOR BOLOMETRIQUE HAS PERFORMANCES AMELIOREES

Selon un aspect, l'invention concerne un détecteur bolométrique pour la détection thermique d'un rayonnement lumineux dans une bande spectrale donnée, comprenant un substrat de support et un ensemble de microbolomètres (300) de dimensions données, agencés sous forme d'une matrice. Chacun desdits microbolomètres comprend une membrane (301) suspendue au dessus dudit substrat de support, ladite membrane étant constituée d'un élément absorbeur (305) de la radiation incidente et d'un élément thermométrique (304) en contact thermique avec l'absorbeur, isolé électriquement dudit élément absorbeur. L'élément absorbeur comprend au moins une première structure métal - diélectrique - métal (MIM) comprenant un empilement de trois couches superposées, d'épaisseur submicronique, dont une première couche métallique (311), une couche en matériau diélectrique (310) et une deuxième couche métallique (309), ladite structure MIM étant apte à générer avec ledit rayonnement incident une résonance plasmonique à au moins une longueur d'onde de ladite bande spectrale. La surface du microbolomètre recouverte par ladite membrane (301) est inférieure à la moitié de la surface totale du microbolomètre. In one aspect, the invention relates to a bolometric detector for the thermal detection of light radiation in a given spectral band, comprising a support substrate and a set of microbolometers (300) of given dimensions, arranged in the form of a matrix. . Each of said microbolometers comprises a membrane (301) suspended above said support substrate, said membrane consisting of an absorber element (305) of the incident radiation and a thermometric element (304) in thermal contact with the absorber, electrically isolated from said absorber element. The absorber element comprises at least a first metal - dielectric - metal structure (MIM) comprising a stack of three superimposed layers, of submicron thickness, including a first metal layer (311), a layer of ...

Infrared image sensor

An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

SEMICONDUCTOR FILM BOLOMETER THERMAL INFRARED DETECTOR

INFRARED IMAGE SENSOR

L'invention concerne un capteur d'image infrarouge, comprenant sur un support (10) une pluralité de premiers pixels (32) et une pluralité de deuxièmes pixels (34) destinés à capter un rayonnement infrarouge émis par un élément d'une scène, chaque pixel comprenant une membrane bolométrique (14) suspendue au-dessus d'un réflecteur (12) recouvrant le support, le réflecteur de chaque premier pixel étant recouvert d'une première couche diélectrique (40), et le réflecteur de chaque deuxième pixel étant recouvert d'une deuxième couche diélectrique (42) différente de la première couche diélectrique par ses propriétés optiques.

HIGH DYNAMIC DEVICE FOR INTEGRATING AN ELECTRIC CURRENT

This device (100a) for integrating an electric current (I) received on an integration node (E) comprises: - an operational amplifier (62); - an integration capacitor (64); - a circuit (105a) for modifying an output voltage (V OUT ) of the operational amplifier performed by a load transfer circuit configured to be connected on said integration node and to transfer loads in said integration capacitor; - a comparison circuit (74) configured to initiate said modification circuit at least once during said integration duration (T int ); and - a storage circuit configured to store said number of initiations that occurred during said integration duration. The received electric current is computed as a function of said output voltage as well as of said number of initiations multiplied by said modification of said output voltage induced by said modification circuit.

CONDUCTION STRUCTURE FOR INFRARED MICROBOLOMETER SENSORS

A conduction structure for infrared microbolometer sensors and a method for sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer (64) and a second conductor layer (68). The microbolometer further may include a bolometer layer (62) between the first conductor layer and the second conductor layer.

CONDUCTIVE STRUCTURE FOR INFRARED SENSORS OF THE MICROBOLOMETRO TYPE

Se puede contar con una estructura de conduccion para sensores microbolométricos de infrarrojos un método para detectar radiacion electromagnética. El microbolometro puede incluir una primera capa conductora y una segunda capa conductora. El microbolometro puede incluir además una capa bolométrica entre la primera capa conductora y la segunda capa conductora.

TWO STAGE TRANSFORMER COUPLING FOR ULTRA-SENSITIVE BOLOMETER TYPE RADIATION SENSOR

METHOD FOR MANUFACTURING AN ELECTROMAGNETIC-RADIATION DETECTOR WITH MICROENCAPSULATION

For the method of manufacturing semiconductor device

一种用于制造半导体装置的方法包括在互补金属氧化物半导体(CMOS)工艺期间在衬底(100)上形成至少一个牺牲层(106，108，110)。在所述至少一个牺牲层的顶部上沉积吸收体层(130)。去除所述至少一个牺牲层(106，108，110)的在所述吸收体层下方的一部分以形成间隙(G1)，所述吸收体层的一部分悬挂在所述间隙上方。所述牺牲层能够是CMOS工艺的氧化物，所述氧化物被利用选择性氢氟酸气相干式蚀刻释放工艺去除以形成间隙。所述牺牲层也能够是聚合物层，其中，所述聚合物层被利用氧气等离子体蚀刻工艺去除以形成间隙。

Microbolometer array with improved performance

According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers (300) of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane (301) suspended above said supporting substrate, said membrane consisting of an element (305) for absorbing the incident radiation and a thermometric element (304) in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (311), a dielectric film (310), and a second metallic film (309), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band. The area of the microbolometer pixel covered by ...

CONDUCTION STRUCTURE FOR INFRARED MICROBOLOMETER SENSORS

A conduction structure for infrared microbolometer sensors and a method for sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer (64) and a second conductor layer (68). The microbolometer further may include a bolometer layer (62) between the first conductor layer and the second conductor layer.

TWO STAGE TRANSFORMER COUPLING FOR ULTRA-SENSITIVE BOLOMETER TYPE RADIATION SENSOR

Method of manufacturing an electromagnetic radiation detector with micro-encapsulation

Device having a membrane structure for detecting thermal radiation, method of production and use of the device

Wafer level packaging of infrared camera detectors

An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity.

Vorrichtung mit Membranstuktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung

Vorrichtung (1) zur Detektion von Wärmestrahlung, aufweisend – mindestens eine Membran (11), auf der mindestens ein thermisches Detektorelement (111) zur Umwandlung der Wärmestrahlung in ein elektrisches Signal angeordnet ist, und – mindestens einen Schaltungsträger (12) zum Tragen der Membran und mit mindestens einer Ausleseschaltung (121) zum Auslesen des elektrischen Signals, – mindestens eine Abdeckung (13) zum Abdecken des Detektorelements, wobei der Schaltungsträger (12), die Membran (11) und die Abdeckung derart zu einem Stapel (10) angeordnet sind, dass die Membran zwischen dem Schaltungsträger und der Abdeckung (13) angeordnet ist, wobei der Stapel in der Art eines Schichtenstapels aufgebaut ist, bei dem die Schichten ebenenweise voneinander getrennt sind, – das Detektorelement (111) und die Ausleseschaltung (121) über eine elektrische Durchkontaktierung (120) durch die Membran (11) hindurch elektrisch miteinander verbunden sind, wobei der Schaltungsträger (12) und die Membran ...

Conduction structure for infrared microbolometer sensors

本发明可提供用于红外微辐射热测定计传感器的一种传导结构以及用于感测电磁辐射的一种方法。该微辐射热测定计可以包括一个第一导体层(64)和一个第二导体层(68)。该微辐射热测定计可以进一步包括位于该第一导体层与第二导体层之间的一个辐射热测定计层(62)。

DEVICE HAVING A MEMBRANE STRUCTURE FOR DETECTING THERMAL RADIATION, METHOD OF PRODUCTION AND USE OF THE DEVICE

The invention relates to a device for detecting thermal radiation, comprising at least one membrane on which at least one thermal detector element for converting the thermal radiation to an electrical signal is arranged, and at least one circuit carrier for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being electrically interconnected through the membrane through an electrical via. The invention also relates to a method for producing said device by way of the following process steps: a) providing the membrane having the detector element and at least one electrical via and providing the circuit carrier, and b) uniting the membrane and the circuit carrier in such a manner that the detector element and the readout circuit are electrically interconnected through the membrane through an electrical via. The production is preferably carried out on the wafer level: Functionalized silicon substrates ...

WAFER LEVEL PROCESSED MICROBOLOMETER FOCAL PLANE ARRAY

Focal Plane Arrays (FPAs) or methods to produce FPAs may be provided for a microbolometer based thermal imaging sensor utilizing wafer level processing (WLP) techniques for manufacture. Batch processing techniques for sealing a cap wafer to an FPA wafer to produce vacuum sealed FPAs may be accomplished with suitable FPA design features in conjunction with a glass frit seal methodology utilizing appropriate frit glass compositions.

Vorrichtung mit Membranstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung

Conduction structure for infrared microbolometer sensors

Two-wavelength image sensor picking up both visible and infrared images

A 2-wavelength image sensor has a plurality of uniformly dispersedly arranged visible radiation detectors and a plurality of uniformly dispersedly arranged, uncooled infrared radiation detectors, and a single visible radiation detector configures a visible radiation detecting pixel and four series connected infrared radiation detectors configure a thermal infrared radiation detecting pixel. Consequently a visible image can be four times a thermal image in resolution. Furthermore for an infrared image an area increased four times per pixel to receive light can be achieved. As a result the infrared image can be enhanced in temperature resolution.

Vorrichtung mit Membranstuktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung

Die Erfindung betrifft eine Vorrichtung zur Detektion von Wärmestrahlung, aufweisend mindestens eine Membran, auf der mindestens ein thermisches Detektorelement zur Umwandlung der Wärmestrahlung in ein elektrisches Signal angeordnet ist, und mindestens einen Schaltungsträger zum Tragen der Membran und zum Tragen mindestens einer Ausleseschaltung zum Auslesen des elektrischen Signals, wobei das Detektorelement und die Ausleseschaltung über eine elektrische Durchkontaktierung durch die Membran hindurch elektrisch miteinander verbunden sind. Daneben wird ein Verfahren zum Herstellen der Vorrichtung mit folgenden Verfahrensschritten angegeben: a) Bereitstellen der Membran mit dem Detektorelement und mindestens einer elektrischen Durchkontaktierung und Bereitstellen des Schaltungsträgers und b) Zusammenbringen der Membran und des Schaltungsträgers, derart, dass das Detektorelement und die Ausleseschaltung über eine elektrische Durchkontaktierung durch die Membran hindurch elektrisch miteinander ...

Device having a membrane structure for detecting thermal radiation, and method for production thereof

In a device for detecting thermal radiation, at least one membrane is provided on which at least one thermal detector element is mounted for the conversion of the thermal radiation into an electric signal and at least one circuit support for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being connected together electrically by an electric contact which passes through the membrane. In addition, a method of producing the device with the following method steps is provided: a) provision of the membrane with the detector element and of at least one electrical through-connection and provision of the circuit support and b) bringing together the membrane and the circuit support in such a manner that the detector element and the readout circuit are connected together electrically by an electrical contact passing through the membrane. Production activity is preferably carried out at wafer level: functionalized silicon substrates are stacked upon one another, firmly bonded to one another and then divided into individual elements. Preferably, the detector elements comprise of pyro-electrical detector elements. The device finds application in motion detectors, presence detectors and in thermal imaging cameras.

LOW-DRIFT INFRARED DETECTOR

BOLOMETER AND METHOD FOR MANUFACTURING SAME

An object of the present invention is to provide a method for manufacturing a microscopic bolometer film and a bolometer using the same via a simple method. The present invention relates to a bolometer manufacturing method including: forming an interlayer having a function that enhances binding between a substrate and a semiconducting carbon nanotube, in a predetermined pattern shape on the substrate; and providing a droplet of a semiconducting carbon nanotube dispersion liquid on the formed interlayer.

Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof

DEVICE HAVING A MEMBRANE STRUCTURE FOR DETECTING THERMAL RADIATION, METHOD OF PRODUCTION AND USE OF THE DEVICE

본 발명은 상기 열 복사를 전기 신호로 변환하기 위한 하나 이상의 열 검출기 소자가 배열되는 하나 이상의 막, 및 상기 막을 지지하고 상기 전기 신호를 판독하는 하나 이상의 판독 회로를 지지하여, 상기 검출기 소자와 상기 판독 회로가 전기 도통 접속에 의해 상기 막을 통해 전기 접속되는 하나 이상의 회로 지지대를 포함하는 열 복사 검출 장치에 관한 것이다. 또한, 본 발명은 a) 상기 검출기 소자를 갖춘 막과 하나 이상의 전기 도통 접속을 제공하고 상기 회로 지지대를 준비하는 단계와, b) 상기 검출기 소자와 판독 회로가 상기 막을 통과하는 전기 접속에 의해 함께 전기적으로 연결되는 방식으로 상기 막과 회로 지지대를 결합하는 단계를 포함하는 열 복사 검출 장치 제조 방법에 관한 것이다. 제조 단계는 바람직하게 웨이퍼 레벨에서 수행되며, 기능화된 실리콘 기판이 서로에 대해 적층되어 서로 단단히 접합된 후에 개별 소자로 분할된다. 바람직하게, 검출기 소자는 파이로-전기 검출기 소자를 포함한다. 상기 장치는 모션 검출기, 프레전스 검출기 및 열 영상 카메라 분야에 적용될 수 있다. The present invention provides a thermal imaging system comprising at least one film on which one or more thermal detector elements are arranged for converting the thermal radiation into an electrical signal and one or more readout circuits for supporting the film and reading the electrical signals, And at least one circuit support to which the circuit is electrically connected through the film by means of an electrical connection. The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of: a) providing at least one electrical connection with a film having the detector element and providing the circuit support; b) And combining the membrane and the circuit support in such a manner that the membrane and the circuit support are connected to each other. The manufacturing steps are preferably performed at the wafer level, and the functionalized silicon substrates are divided into individual elements after being laminated to each other and tightly bonded to each other. Preferably, the detector element comprises a pyroelectric detector element. The apparatus can be applied to the field of motion detectors, presence detectors and thermal imaging cameras.

Low thermal capacity micro-bolometer and associated manufacturing method

An infrared imaging micro-bolometer integrates a membrane assembled in suspension on a substrate by support arms. The membrane includes an absorbing material configured to capture infrared radiations and a thermometric material connected to the absorbing material configured to perform a transduction of the infrared radiations captured by the absorbing material The thermometric material is arranged on a surface area smaller than 0.4 times a surface area of the membrane. The membrane also includes at least one central dielectric layer arranged between the absorbing material and the thermometric material. Recesses are formed in the absorbing material and in the at least one dielectric layer in portions of the membrane devoid of the thermometric material.

MICROBOLOMETER ARRAY WITH IMPROVED PERFORMANCE

According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers () of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane () suspended above said supporting substrate, said membrane consisting of an element () for absorbing the incident radiation and a thermometric element () in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (), a dielectric film (), and a second metallic film (), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band. The area of the microbolometer pixel covered by said membrane () is less than or equal to half of the total area of the microbolometer pixel. 1. A microbolometer array for thermal detection of light radiation in a given spectral band , comprising a supporting substrate and an array of microbolometer pixels of given dimensions , wherein each microbolometer pixel comprises:a membrane suspended above said supporting substrate by supporting elements, said membrane consisting of an element for absorbing the incident radiation and a thermometric element in thermal contact with the absorber, electrically insulated from said absorber element;elements for electrically connecting said thermometric element to the supporting substrate;thermally insulating arms arranged between the thermometric element and the supporting substrate;and wherein:the absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness including a first metallic film, a dielectric film, and a ...

DEVICE HAVING A MEMBRANE STRUCTURE FOR DETECTING THERMAL RADIATION, METHOD OF PRODUCTION AND USE OF THE DEVICE

The invention relates to a device for detecting thermal radiation, comprising at least one membrane on which at least one thermal detector element for converting the thermal radiation to an electrical signal is arranged, and at least one circuit carrier for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being electrically interconnected through the membrane through an electrical via. The invention also relates to a method for producing said device by way of the following process steps: a) providing the membrane having the detector element and at least one electrical via and providing the circuit carrier, and b) uniting the membrane and the circuit carrier in such a manner that the detector element and the readout circuit are electrically interconnected through the membrane through an electrical via. The production is preferably carried out on the wafer level: Functionalized silicon substrates ...

TWO-WAVELENGTH IMAGE SENSOR PICKING UP BOTH VISIBLE AND INFRARED IMAGES

A 2-wavelength image sensor has a plurality of uniformly dispersedly arranged visible radiation detectors and a plurality of uniformly dispersedly arranged, uncooled infrared radiation detectors, and a single visible radiation detector configures a visible radiation detecting pixel and four series connected infrared radiation detectors configure a thermal infrared radiation detecting pixel. Consequently a visible image can be four times a thermal image in resolution. Furthermore for an infrared image an area increased four times per pixel to receive light can be achieved. As a result the infrared image can be enhanced in temperature resolution.

INFRARED CAMERA ARCHITECTURE SYSTEMS AND METHODS

An infrared camera architecture includes, for an embodiment, an infrared detector, a substrate, a plurality of electrical components coupled to the substrate, and a pedestal made of a thermally conductive material and having a leg coupled to the substrate. The infrared detector is supported by and thermally coupled to the pedestal, with the pedestal thermally isolating the infrared detector from the plurality of electrical components.

dispositivo apresentado uma estrutura em membrana para detecção de radiação térmica, método de produção e uso do dispositivo.

Conduction structure for infrared microbolometer sensors

A conduction structure for infrared microbolometer sensors and a method for sensing electromagnetic radiation may be provided. The microbolometer may include a first conductor layer and a second conductor layer. The microbolometer further may include a bolometer layer between the first conductor layer and the second conductor layer.

Visible and infrared dual mode imaging system

An imaging system includes an image sensor and an optical filter. The image sensor captures image data in response to incident light. The optical filter filters the light and includes a dual window transmission spectrum. The dual window transmission spectrum includes a first transmission window having a first pass band aligned to pass visible light and a second transmission window having a second pass band overlapping with an absorption band of infrared light in Earth's atmosphere.

THERMISCHER INFRAROTDETEKTOR DES BOLOMETERTYPS MIT HALBLEITERFILM

MICROBOLOMETER ARRAY WITH IMPROVED PERFORMANCE

CMOS bolometer

A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

Two stage transformer coupling for ultra-sensitive silicon sensor pixel

A bolometer type ultra-sensitive silicon sensor pixel of a multi-pixel sensor wherein each pixel includes a detector stage, an intermediate stage, and a heat bath stage. The detector stage, the intermediate stage and a portion of the heat bath stage are generally co-planar and are interconnected by I-beam bridges so as to permit mutually co-planar rotation in response to stress and strain. Electrical coupling is improved between a micro-antenna and the detector stage by a two stage transformer assembly that couples the micro-antenna to the detector stage.

INFRARED DETECTION SENSOR MODULE AND THERMAL IMAGING CAMERA MODULE INCLUDING THE MODULE

CMOS BOLOMETER

A method of manufacturing a semiconductor device includes forming at least one sacrificial layer (106, 108, 110) on a substrate (100) during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer (130) is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer (106, 108, 110) beneath the absorber layer is removed to form a gap (G1) over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

Infrared image sensor

An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

INFRARED IMAGER WITH INTEGRATED METAL LAYERS

Various techniques are provided for implementing, operating, and manufacturing infrared imaging devices using integrated circuits. In one example, a system includes a focal plane array (FPA) integrated circuit comprising an array of infrared sensors adapted to image a scene, a plurality of active circuit components, a first metal layer disposed above and connected to the circuit components, a second metal layer disposed above the first metal layer and connected to the first metal layer, and a third metal layer disposed above the second metal layer and below the infrared sensors. The third metal layer is connected to the second metal layer and the infrared sensors. The first, second, and third metal layers are the only metal layers of the FPA between the infrared sensors and the circuit components. The first, second, and third metal layers are adapted to route signals between the circuit components and the infrared sensors.

CMOS image sensor including infrared pixels having improved spectral properties, and method of manufacturing same

The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

THERMISCHER INFRAROTDETEKTOR DES BOLOMETERTYPS MIT HALBLEITERFILM

Bestrahlungseinrichtung und Bearbeitungsmaschine damit

Die Erfindung betrifft eine Bestrahlungseinrichtung (1) zum Bestrahlen eines Bearbeitungsfelds (8) mit einem Bearbeitungsstrahl, insbesondere mit einem Laserstrahl (3), für das Durchführen eines Schweißprozesses, umfassend: eine Scannereinrichtung (4) zum Ausrichten des Bearbeitungsstrahls auf eine Bearbeitungsposition (X, Y) in dem Bearbeitungsfeld (8). Die Bestrahlungseinrichtung (1) weist eine Abbildungseinrichtung (9) zur Abbildung eines Teilbereichs des Bearbeitungsfelds (8) auf ein Pyrometer (17) auf, welches mindestens zwei Pyrometer-Segmente aufweist, wobei die Abbildungseinrichtung (9) Wärmestrahlung (19), die von der Bearbeitungsposition (X, Y) in dem Bearbeitungsfeld (8) ausgeht, auf ein erstes Pyrometer-Segment abbildet, und wobei die Abbildungseinrichtung (9) Wärmestrahlung (19), die von einer Position in dem Bearbeitungsfeld (8) ausgeht, die sich entlang einer Vorschubrichtung (v) des Bearbeitungsstrahls in dem Bearbeitungsfeld (8) vor oder hinter der Bearbeitungsposition ...

Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines

Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

Method of manufacturing a semiconductor device

Method of Making a Variable Emittance Window

A method of making a variable emittance window comprising providing a metal foil substrate, applying an antireflection material layer onto the metal foil substrate, applying a protection material layer onto the antireflection material layer, applying a variable emittance material layer onto the protection material layer, annealing to form a two-step variable emittance layer, applying a transparent low emittance material layer to the two-step variable emittance layer, adhering a transparent substrate to the transparent low emittance material layer, and removing the metal foil substrate.

VISIBLE AND INFRARED DUAL MODE IMAGING SYSTEM

An imaging system includes an image sensor and an optical filter. The image sensor captures image data in response to incident light. The optical filter filters the light and includes a dual window transmission spectrum. The dual window transmission spectrum includes a first transmission window having a first pass band aligned to pass visible light and a second transmission window having a second pass band overlapping with an absorption band of infrared light in Earth's atmosphere.

METHOD OF MANUFACTURING AN ELECTROMAGNETIC RADIATION DETECTOR WITH MICRO-ENCAPSULATION

A method of manufacturing a detector capable of detecting a wavelength range [λ 8 ; λ 14 ] centered on a wavelength λ 10 , including: forming said device on a substrate by depositing a sacrificial layer totally embedding said device; forming, on the sacrificial layer, a cap including first, second, and third optical structures transparent in said range [Δ 8 ; λ 14 ], the second and third optical structures having equivalent refraction indexes at wavelength λ 10 respectively greater than or equal to 3.4 and smaller than or equal to 2.3; forming a vent of access to the sacrificial layer through a portion of the cap, and then applying, through the vent, an etching to totally remove the sacrificial layer.

CMOS bolometer

A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

CMOS technology multi-frequency metamaterial absorption structure based terahertz microbolometer

Low Thermal Capacity Micro-Bolometer and Associated Manufacturing Method

An infrared imaging micro-bolometer integrates a membrane assembled in suspension on a substrate by support arms. The membrane includes an absorbing material configured to capture infrared radiations and a thermometric material connected to the absorbing material configured to perform a transduction of the infrared radiations captured by the absorbing material The thermometric material is arranged on a surface area smaller than 0.4 times a surface area of the membrane. The membrane also includes at least one central dielectric layer arranged between the absorbing material and the thermometric material. Recesses are formed in the absorbing material and in the at least one dielectric layer in portions of the membrane devoid of the thermometric material.

PRESENTED DEVICE A MEMBRANE STRUCTURE FOR DETENTION OF THERMAL RADIATION, METHOD OF PRODUCTION AND USE OF THE DEVICE

Infrared camera architecture systems and methods

An infrared camera architecture includes, for an embodiment, an infrared detector, a substrate, a plurality of electrical components coupled to the substrate, and a pedestal made of a thermally conductive material and having a leg coupled to the substrate. The infrared detector is supported by and thermally coupled to the pedestal, with the pedestal thermally isolating the infrared detector from the plurality of electrical components.

Infrared detector, imaging device including the same, and manufacturing method for infrared detector

An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.

Wafer level packaging of infrared camera detectors

An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity.

Infrared image sensor

Method for making silicon-germanium absorbers for thermal sensors

A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH 4 gas and a SiH 4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH 4 gas and the SiH 4 gas are also heated and the pressure around the wafer is reduced to at least 2.5*10 −3 mBar to produce the polycrystalline silicon-germanium film. The polycrystalline silicon-germanium film is then annealed to improve its resistivity.

Infrared image sensor

An image sensor including includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

Electromagnetic wave sensor

An electromagnetic wave sensor includes a substrate having transmittance of electromagnetic waves having a specific wavelength, an insulator layer provided on one surface side of the substrate, a thermistor film disposed to have a space between the thermistor film and one surface of the substrate, and a wiring part provided inside or on a surface of the insulator layer and electrically connected to the thermistor film, wherein a transmittance of the electromagnetic waves at a portion facing the thermistor film is relatively higher than a transmittance of the electromagnetic waves at a portion where the wiring part is provided in a layer in which the insulator layer is provided.

Low-drift infrared detector

A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.

Microbolometer systems and methods

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

INFRARED SENSOR, INFRARED SENSOR ARRAY, AND METHOD OF MANUFACTURING INFRARED SENSOR

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion. 1. An infrared sensor comprising:a base substrate;a bolometer infrared receiver;a first beam; anda second beam, whereineach of the first beam and the second beam has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion,the infrared receiver is supported by the first beam and the second beam to be away from the base substrate,the infrared receiver includes a resistance change portion including a resistance change material an electrical resistance of which changes with temperature,the resistance change portion includes an amorphous semiconductor, andeach of the first beam and the second beam includes a crystalline semiconductor made of a base material same as a base material of the resistance change material, and is electrically connected to the resistance change portion at the separated portion.2. The infrared sensor according to claim 1 , whereinthe base material is silicon or silicon germanium.3. ...

Sealed Infrared Imagers and Sensors

The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

340 GHz MULTIPIXEL TRANSCEIVER

A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart. 1. A multi-pixel terahertz transceiver , comprising:a plurality of layers of a semiconductor in a stacked array, each of said plurality of layers of said semiconductor in said stacked array configured to perform less than all the functions of the transceiver, each of said plurality of layers of a semiconductor in said stacked array when in an assembled structure in electromagnetic communication with at least one other of said plurality of layers of a semiconductor in said stacked array;a local oscillator in electrical communication with said plurality of layers of said semiconductor in said stacked array and configured to provide an oscillation signal for each of a transmitted signal and a received signal;a biasing terminal for applying biasing signals in electrical communication with at least one of said plurality of layers of said semiconductor in said stacked array;an IF output terminal in electrical communication with at least one of said plurality of layers of said semiconductor in said stacked array; andan antenna array configured to transmit and to receive a plurality of terahertz signals.2. The multi-pixel terahertz transceiver of claim 1 , wherein at least one of said plurality of layers of a semiconductor in a stacked array comprises a silicon active element.3. The multi-pixel terahertz transceiver of claim 1 , wherein at least one of said plurality of layers of a semiconductor in a stacked array comprises a gallium arsenide active element.4. The multi-pixel terahertz transceiver of claim 1 , wherein said electromagnetic communication between said ...

Cmos image sensor including infrared pixels having improved spectral properties, and method of manufacturing same

The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

INFRARED DETECTOR, IMAGING DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD FOR INFRARED DETECTOR

An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.

Infrared detector and preparation method thereof

本公开涉及一种红外探测器及其制备方法，红外探测器包括多个阵列排布的探测器像元，每个探测器像元包括电极层，电极层上设置有多个直线条带结构和多个回折条带结构，多个直线条带结构和多个回折条带结构沿垂直于直线条带结构的方向交替排列；红外探测器的红外吸收谱段为8微米至24微米波段。通过本公开的技术方案，实现了红外探测器的宽谱吸收，大大提高了红外探测器对目标物体温度红外辐射能量的吸收率，进而使得红外探测器具有较高的探测灵敏度。

Visible and infrared dual mode imaging system

一种成像系统包含图像传感器及光学滤波器。所述图像传感器响应于入射光而捕获图像数据。所述光学滤波器对所述光进行滤波且包含双重窗透射光谱。所述双重窗透射光谱包含：第一透射窗，其具有经对准以使可见光通过的第一通带；及第二透射窗，其具有与地球大气中的红外光的吸收带重叠的第二通带。

Radiation spectrum-based color CCD self-calibration temperature measuring device and method

本发明公开了一种基于辐射光谱的彩色CCD自标定测温装置和方法，属于辐射法测温技术领域，装置包括沿测量对象的辐射光波方向依次设置的透镜组、分束镜和彩色CCD；辐射光波被所述分束镜分成两束后，其中一束透射进入彩色CCD，另一束被反射进入光谱测量模块；彩色CCD用于记录测量对象的彩色图像，光谱测量模块用于测量测量对象的光谱特性；彩色CCD和光谱测量模块均与计算机通讯连接，计算机对所述彩色CCD的测温常数进行自标定，并计算测量对象的温度分布。可实现系统的自标定，装置简单，测温准确性高，应用场景广泛，易推广。

CMOS bolometer

一种用于制造半导体装置的方法包括在互补金属氧化物半导体(CMOS)工艺期间在衬底(100)上形成至少一个牺牲层(106，108，110)。在所述至少一个牺牲层的顶部上沉积吸收体层(130)。去除所述至少一个牺牲层(106，108，110)的在所述吸收体层下方的一部分以形成间隙(G1)，所述吸收体层的一部分悬挂在所述间隙上方。所述牺牲层能够是CMOS工艺的氧化物，所述氧化物被利用选择性氢氟酸气相干式蚀刻释放工艺去除以形成间隙。所述牺牲层也能够是聚合物层，其中，所述聚合物层被利用氧气等离子体蚀刻工艺去除以形成间隙。

LOW THERMAL CAPACITY MICRO-BOLOMETER AND ASSOCIATED MANUFACTURING PROCESS

L’invention concerne un micro-bolomètre d’imagerie infrarouge (10a) intégrant une membrane (11a) montée en suspension sur un substrat par des bras de soutien (14a-14h). La membrane (11a) comporte :. un matériau absorbeur (13a) configuré pour capter les rayonnements infrarouges ;. un matériau thermométrique (12) connecté au matériau absorbeur (13a) configuré pour réaliser une transduction des rayonnements infrarouges captés par le matériau absorbeur (13a) ; le matériau thermométrique (12) étant disposé sur une surface inférieure à 0.4 fois une surface de la membrane (11a), et. au moins une couche diélectrique centrale disposée entre le matériau absorbeur (13a) et le matériau thermométrique (12). Des évidements (20) sont ménagés dans le matériau absorbeur (13a) et dans l’au moins une couche diélectrique dans des parties de la membrane (11a) exempte du matériau thermométrique (12). The invention relates to an infrared imaging micro-bolometer (10a) incorporating a membrane (11a) suspended on a substrate by support arms (14a-14h). The membrane (11a) comprises:. an absorber material (13a) configured to capture infrared radiation ;. a thermometric material (12) connected to the absorber material (13a) configured to perform transduction of infrared radiation picked up by the absorber material (13a); the thermometric material (12) being disposed on a surface less than 0.4 times a surface of the membrane (11a), and. at least one central dielectric layer disposed between the absorber material (13a) and the thermometric material (12). Recesses (20) are made in the absorber material (13a) and in at least one dielectric layer in parts of the membrane (11a) free from the thermometric material (12).

Infrared detector array class encapsulation structure and its manufacturing method

一种红外探测器阵列级封装结构及其制造方法，所述红外探测器阵列级封装结构包括：基底，所述基底包括衬底以及位于部分衬底表面的读出电路；薄膜层，所述薄膜层部分位于所述读出电路外侧的衬底表面，与所述衬底之间形成真空腔；吸气剂层，所述吸气剂层位于所述真空腔内部的基底表面；红外传感器单元，所述红外传感器单元位于所述真空腔内的读出电路上方与所述读出电路连接。上述红外探测器阵列级封装结构的结构紧凑，能有效地降低器件的成本。

Micro-bolometer and preparation method thereof

本发明公开一种微测辐射热计，包括水平分布的平面半导体晶态纳米线阵列以及从下至上依次叠层于所述平面半导体晶态纳米线阵列上方的非晶硅层和氮化硅层，所述平面半导体晶态纳米线的两端设有金属电极。本发明改变了目前常见的微测辐射热计器件的结构，采用悬空的晶态纳米线作为支撑，悬空非晶硅(敏感层)氮化硅(光敏感层)，由于悬空晶态纳米线表面对热传导的限制，使得探测岛区能够很好地获得热绝缘，同时由于纳米线具有较低的电阻率，也可作为导电通道，极大的提高器件热性能到电性能的转变。

Semiconductor film bolometer thermal infrared detector

A thermal infrared detector comprising a dielectric pellicle (5) suspended over a cavity in a substrate (6), the pellicle supporting a detector element (1) comprising a heat sensitive semiconductor layer (3) between a pair of thin film metallic contacts (2, 4), these being deposited on the pellicle, the cavity being formed by etching and removal of the substrate material through holes or slots (8) in the surface of the substrate.

A kind of infrared image is without baffle Nonuniformity Correction device and its bearing calibration

本发明公开了一种红外图像无挡片非均匀性校正装置及其校正方法，首先在高低温箱中分别让机芯裸露和装入外壳中进行两种方法标定，获取两种情况下不同环境温度对应的机芯的响应，并记录响应对应的探测器衬底温度和结构温度；然后在对着黑体标定高温两帧图像，计算非均匀性校正参数K，并将K和无挡片标定的结果存入FLASH中；工作时根据衬底温度读出FLASH模块中的背景值再计算出当前衬底和结构温度对应的背景，再对输入图像进行非均匀性校正输出。本发明所达到的有益效果：在模拟红外成像系统工作时的情况，完成无挡片的标定；工作时实时插值计算背景参数，在无需挡片的情况下，完成图像的非均匀性校正，提升图像质量的同时减少机械结构，降低系统功耗和噪声。

Microbolometer array with improved performance

Semiconductor film bolometer thermal infrared detector

MEMS non-refrigerated infrared detector thermal parameters test circuit and test method

本发明涉及红外探测器的热学参数的电学自测试领域，具体涉及一种MEMS非制冷红外探测器的热学参数测试电路及测试方法。所述MEMS非制冷红外探测器热学参数测试电路包括：MEMS非制冷红外探测器阵列，包括多行多列的红外敏感单元；阵列选通开关，用于依次轮流选通MEMS非制冷红外探测器阵列中的敏感单元，并输出所选中的敏感单元产生的电学信号给放大运算电路；放大运算电路，对电学信号的变化进行放大运算，并将放大运算结果输出给数据处理模块；电源模块，用于给阵列选通开关所选中的红外敏感单元供电；所述数据处理模块，根据所述放大运算电路的实际测试数据计算得到器件热容C、热响应时间τ、热导G、黑体响应率R IR 和红外吸收效率η。

Thermoelectric infrared detector with high CMOS integration

公开了一器件和形成该器件的方法。该器件包括衬底，该衬底具有设置在晶体管区域中的晶体管组件和设置在混合区域中下传感器腔膜上的微电子机械系统(MEMS)组件。MEMS组件用作热电式红外传感器，热电堆线结构，该热电堆线结构包括设置在反向掺杂的第一和第二线段的一部分上的吸收层。后段线(BEOL)电介质设置在具有多个层间介电(ILD)层的衬底上。该ILD层具有金属层和通孔层。ILD层包括金属线和用于互连器件组件的通孔触点。金属层中的金属线被配置成在下传感器腔上方限定BEOL或上传感器腔，BEOL电介质的第一金属层的金属线被配置为限定MEMS组件的几何形状。

Low thermal capacity micro-bolometer and associated manufacturing method

The invention relates to an infrared imaging micro-bolometer (10a) incorporating a membrane (11a) suspended on a substrate by support arms (14a-14h). The membrane (11a) comprises: an absorber material (13a) configured to capture infrared radiation; a thermometric material (12) connected to the absorber material (13a) and configured to transduce the infrared radiation picked up by the absorber material (13a); the thermometric material (12) being arranged on an inner surface area less than 0.4 times a surface area of the membrane (11a), and at least one central dielectric layer being arranged between the absorber material (13a) and the thermometric material (12). Recesses (20) are formed in the absorber material (13a) and in the at least one dielectric layer in portions of the membrane (11a) which is free from the thermometric material (12).

Low-drift infrared detector

A semiconductor device (100) for measuring IR radiation comprising: at least one sensor pixel (10); at least one reference pixel (20) shielded from said IR radiation comprising a heater (23); a controller (50) adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.

Thermistor element and electromagnetic wave sensor

A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

Infrared detector pixel structure and infrared detector

本公开涉及一种红外探测器像素结构和红外探测器，红外探测器像素结构包括：衬底以及位于衬底上依次设置的第一结构层和第二结构层；第一结构层包括至少两个梁结构，每个梁结构分别连接中间支撑结构和微桥柱，由中间支撑结构向对应的微桥柱的梁路径中，交汇于同一节点的两条并行梁结构分别为第一半桥结构和第二半桥结构，第一半桥结构和第二半桥结构形成热对称结构；其中，第一半桥结构的长度大于第二半桥结构的长度，沿垂直于衬底的方向，第一半桥结构的厚度大于第二半桥结构的厚度；第一结构层包括第一电极层，第二结构层包括第二电极层和热敏层，第二电极层通过第一电极层电连接至微桥柱。该红外探测器像素结构能够提高红外探测器的NETD性能。

Ultra-wide waveband uncooled infrared detector with single-layer structure and preparation method thereof

本申请涉及单层结构的超宽波段非制冷红外探测器及制备方法，包括底层衬底和双支撑悬臂梁结构，底层衬底上设置有第一金属电极层、第一金属反射层和第一金属保护层；双支撑悬臂梁结构包括第二金属层、第一介质层、第二金属电极层，光敏层和第二介质层，第一介质层为双支撑悬臂梁结构的支撑层；第二金属电极层覆盖设置在容纳空间中，通过第一介质层上的通孔与第一金属电极层电连接，通过支撑层与衬底实现热隔离但保持良好的电连接；第二金属层设置在所述第一介质层的下面。该方法通过在双支撑悬臂梁结构的下表面增加薄层金属层，不仅极大的扩展器件的响应波段、吸收效率高，而且结构和工艺简单，制造成本低。

Thermistor element and electromagnetic wave sensor

本发明的热敏电阻元件具备：热敏电阻膜；一对第一电极，与热敏电阻膜的一面接触地设置；绝缘膜，设置于一对第一电极的与热敏电阻膜接触的一侧的相反侧；和至少一个以上的开口部，位于在俯视时与一对第一电极分别重叠的区域内，贯通绝缘膜，第一电极具有：位于在俯视时与开口部重叠的区域内的第一部分；和位于在俯视时与开口部重叠的区域外的第二部分，并且，遍及第一部分和第二部分之间，与热敏电阻膜的一面接触而设置。

A kind of current sensing means and its detection method based on artificial intelligence

本发明涉及一种基于人工智能的电流检测装置及其检测方法，属电气工程领域。该电流检测装置包括红外图像采集模块、主控单元、样本图像存储模块；主控单元包括第一DSP、第二DSP；红外图像采集模块采集图像并送至第一DSP进行图像处理，处理后送至第二DSP与样本图像存储模块中的样本图像进行图像比对、计算：首先通过实验获取冷却装置启动和未启动时导体承载不同电流时的红外温度场图像，并进行图像处理作为样本图像，建立样本图像数据库；其次采集被测电流回路导体的红外温度场图像并处理得到采样图像，与样本图像比对及计算，得出电流值。本发明检测装置体积小、重量轻；计算量小、快速准确，尤其适合于高电压、大电流场合的电流检测。

The cmos image sensor and its manufacture method of infrared image element including the spectral characteristic with raising

本发明涉及一种包括具有提高的光谱特性的红外像素的CMOS图像传感器及其制造方法，其中在RGB像素的滤色器和红外像素的滤色器之间形成阶梯部。在根据各像素的滤色器和红外滤色器之间形成阶梯部，不管形成滤色器和红外滤色器的材料的特性如何，滤色器的厚度可任意调节，因此改进了串音特性。

Microbolometer systems and methods

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a microbolometer array. The microbolometer array includes a plurality of microbolometers. Each microbolometer includes a microbolometer bridge that includes a first portion and a second portion. The first portion includes a resistive layer configured to capture infrared radiation. The second portion includes a second portion having a plurality of perforations defined therein.

Colour imaging temperature field measuring apparatus and method based on auxiliary frequency modulation light source

本发明涉及一种基于辅助调频光源的彩色成像温度场测量装置及方法，包括：照射待测物体表面的辅助调频光源和彩色图像光电传感器；彩色图像光电传感器在辅助调频光源开启状态下采集待测物体表面的第一彩色图像，在辅助调频光源关闭状态下采集第二彩色图像；第一彩色图像的每个像素的RGB色度值分别对应三个光谱通道的第一辐射强度；第二彩色图像的每个像素的RGB色度值分别对应三个光谱通道的第二辐射强度；待测物体的温度是根据第一辐射强度、第二辐射强度以及辅助调频光源的辐射强度确定的。本发明提供的技术方案在未知发射率情形下实现了大温度梯度目标物体的温度场测量，扩大了温度场测量的有效范围。

Microbolometer array with improved performance

According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers ( 300 ) of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane ( 301 ) suspended above said supporting substrate, said membrane consisting of an element ( 305 ) for absorbing the incident radiation and a thermometric element ( 304 ) in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film ( 311 ), a dielectric film ( 310 ), and a second metallic film ( 309 ), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band. The area of the microbolometer pixel covered by said membrane ( 301 ) is less than or equal to half of the total area of the microbolometer pixel.

Infrared image sensor

Lwir sensor with capacitive microbolometer and hybrid visible/lwir sensor

A pixel for an image sensor includes a microbolometer sensor portion, a visible image sensor portion and an output path. The microbolometer sensor portion outputs a signal corresponding to an infrared (IR) image sensed by the microbolometer sensor portion. The visible image sensor portion outputs a signal corresponding to a visible image sensed by the visible image sensor portion. The output path is shared by the microbolometer and the visible image sensor portions, and is controlled to selectively output the signal corresponding to the IR image or the signal corresponding to the visible image. The output path may be further shared with a visible image sensor portion of an additional pixel, in which case the output path may be controlled to selectively to also output the signal corresponding to a visible image of the additional pixel.

Thermopile sensor and manufacturing method thereof

本发明实施例提供一种热电堆传感器及其制作方法，热电堆传感器包括衬底、第一薄膜层、第二薄膜层、第三薄膜层、第一悬臂梁和第二悬臂梁；衬底包括凹槽区和环绕凹槽区的周边区；凹槽区内设置有第一支撑部和第二支撑部；凹槽区除第一支撑部和第二支撑部之外的区域的厚度小于周边区的厚度；第一薄膜层、第二薄膜层、第一悬臂梁和第二悬臂梁位于凹槽区；第三薄膜层位于周边区；第二薄膜层、第三薄膜层、第一悬臂梁和第二悬臂梁同层设置；第二薄膜层位于第一薄膜层远离衬底的一侧；第一薄膜层和第二薄膜层均用于吸收红外辐射。本发明实施例提供一种热电堆传感器及其制作方法，在不增加热电堆传感器尺寸的情况下，提高了热电堆传感器的灵敏度。

A kind of mode of resonance wide spectrum non-refrigerated infrared detector and preparation method thereof

一种谐振型宽光谱非制冷红外探测器及其制备方法涉及红外探测与成像技术领域，解决了对红外辐射吸收率低、光谱响应带宽窄和制备困难的问题，探测器包括由下至上依次设置的集成读出电路衬底层、热绝缘微桥、热敏电阻传感层、钝化绝缘层、金属反射层和由吸收单元组成的阵列层；热敏电阻传感层通过热绝缘微桥电连接集成读出电路衬底层；金属反射层的厚度值大于红外辐射在其内的趋肤深度值；吸收单元包括N个谐振机构，N为≥2的整数，谐振机构包括谐振单元，谐振单元由金属层和介质层组成，金属层位于介质层的上表面上，谐振机构之间金属层的尺寸互不相同。本发明通过金属反射层和阵列层实现对红外辐射吸收率高，具有宽的光谱响应带宽。

Infrared detector and preparation method thereof

一种红外探测器及其制备方法，该红外探测器包括由像元阵列组合而成的传感单元，像元包括微桥谐振腔、位于每个微桥谐振腔下方的反射层模块、以及微桥支撑和电连接孔模块；其中，微桥支撑和电连接孔模块用于实现所在像元电阻电连接的接触区域；像元阵列中的每个反射层模块连成一起，微桥支撑和电连接孔模块与所述反射层模块是隔开的；根据共享模式，像元阵列中相邻行且同一列或相邻列且相邻行的像元共享一个微桥支撑和电连接孔模块，其中，交叉共享模式为相邻两行的像元电阻交叉共享一个所述微桥支撑和电连接孔模块，平行共享模式为相邻两行的像元电阻平行共享一个所述微桥支撑和电连接孔模块；相邻行且同一列的像元电阻共享端接电源端或接地端，以实现像元阵列输出数据的读取。

Microbolometer systems and methods

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a cross-section having a first section, a second section substantially parallel to the first section, and a third section joining the first section and the second section.

High-speed ultrathin silicon-on-insulator infrared bolometers and imagers

In one aspect, the invention provides a nanobolometer cell including a base layer, a dielectric spacer layer above and adjacent to the base layer, an ultrathin silicon film above and adjacent to the spacer layer, and at least one plasmonic optical antenna resonator above and adjacent to the silicon film..

Variable emittance window

A smart window comprising a transparent substrate, a transparent low emittance layer on the transparent substrate, a variable emittance material layer on the substrate or transparent low emittance layer, and a protection material layer on the variable emittance material layer.

Microbolometer systems and methods

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a microbolometer array. The microbolometer array includes a plurality of microbolometers. Each microbolometer includes a microbolometer bridge that includes a first portion and a second portion. The first portion includes a resistive layer configured to capture infrared radiation. The second portion includes a second portion having a plurality of perforations defined therein.

Infrared sensor, infrared sensor array, and infrared sensor manufacturing method

一种Ge长波红外太赫兹探测器阵列和制备方法

本发明公开了一种Ge长波红外太赫兹探测器阵列和制备方法，该探测器阵列包括吸收区阵列和共用电极二个部分，吸收区阵列像元由吸收层、石墨烯/金属电极层组成，共用电极由背接触电极和正面刻蚀重掺杂电极层组成，其中背接触电极表面覆盖钝化层，制备方法包括四个步骤，依次是通过光刻和气相沉积技术在Ge晶片正面形成吸收层和石墨烯层；通过光刻、刻蚀和离子注入技术形成正面刻蚀重掺杂电极层；通过光刻和热蒸发技术形成正面金属电极层；通过减薄、离子注入和气相沉积技术形成背接触电极和钝化层。本发明的优点是：离子注入技术形成吸收层解决了台阶型探测器像元高纯Ge外延层制备困难的难题，并且与当前的半导体工艺技术相兼容。

一种Ge长波红外太赫兹探测器阵列和制备方法

本发明公开了一种Ge长波红外太赫兹探测器阵列和制备方法，该探测器阵列包括吸收区阵列和共用电极二个部分，吸收区阵列像元由吸收层、石墨烯/金属电极层组成，共用电极由背接触电极和正面刻蚀重掺杂电极层组成，其中背接触电极表面覆盖钝化层，制备方法包括四个步骤，依次是通过光刻和气相沉积技术在Ge晶片正面形成吸收层和石墨烯层；通过光刻、刻蚀和离子注入技术形成正面刻蚀重掺杂电极层；通过光刻和热蒸发技术形成正面金属电极层；通过减薄、离子注入和气相沉积技术形成背接触电极和钝化层。本发明的优点是：离子注入技术形成吸收层解决了台阶型探测器像元高纯Ge外延层制备困难的难题，并且与当前的半导体工艺技术相兼容。

一种多结型锗基长波红外探测器及制备方法

本发明公开了一种多结型锗基长波红外探测器及制备方法，所述探测器由锗基底、电极区、吸收区、阻挡区、引线电极和钝化层组成，制备方法包括四个步骤，即通过光刻、离子注入、快速退火、薄膜淀积和干法刻蚀等工艺在高阻锗基底上依次形成吸收区、电极区、钝化层和引线电极。本发明制备的长波红外探测器，在传统阻挡杂质带探测器结构的基础上，引入多个吸收区和阻挡区，从而获得多个耗尽区，使得耗尽区宽度增加，器件有效吸光区域增大，探测器的响应率和探测率得到提高。本发明的制备方法与当前的半导体工艺技术相兼容，研发和生产成本低。

High dynamic device for integrating an electric current

A device of integration of an electric current received on an integration node, includes an operational amplifier, an integration capacitor, and a circuit for modifying an output voltage of the operational amplifier formed by a charge transfer circuit configured to be connected on the integration node and to transfer charges into the integration capacitor. The device also includes a comparison circuit configured to trigger the modification circuit at least once during the integration duration, and a storage circuit configured to store the number of triggerings which have occurred during the integration duration. The received electric current is calculated according to the output voltage as well as to the number of triggerings multiplied by the modification of the output voltage induced by the modification circuit.

높은 온도 안정성의 간섭 측정 흡수재를 사용하는 표면 미세-기계 가공된 적외선 센서

표면 기계 가공된 적외선 센서 패키지를 제조하는 방법이 개시되어 있다. 전면과 후면을 갖는 반도체 웨이퍼가 제공된다. 트랜지스터가 기판의 전방 측 상에 규정된다. 박막 반사재가 기판의 전방 측에 주입되고, 센서가 반사재에 인접한 반도체 기판의 전방 측 상에 형성된다. 박막 흡수재가 센서 상에 퇴적되며, 박막 흡수재는 반사재와 실질적으로 평행하다.

一种铟镓砷短波红外探测器

本发明公开了一种铟镓砷短波红外探测器。器件结构从上至下依次包括钝化层，窗口层，吸收层，缓冲层，读出电路，金属电极和互连通孔。其中，金属电极制备在缓冲层上。互连通孔制备在光敏元上，形成一个锥形通孔。互连通孔只与窗口层和读出电路连通。钝化层覆盖了除金属电极以外的器件表面，同时在互连通孔锥形下半部形成内部绝缘隔离。本器件结构特征在于新型铟镓砷短波红外探测器在光敏元上引入一个锥形的通孔，然后在通孔中填充互连金属连接窗口层与读出电路，使得探测器光敏元从材料内部就可以与读出电路进行互连。这种结构具有结构紧凑、易集成，能有效提高探测器在三维方向的堆叠密度，是未来发展微系统的核心技术。

Microbolometer systems and methods

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

一种红外探测器结构及其制造方法

本发明提供一种红外探测器结构及其制造方法，该结构包括从下到上依次层叠的带有处理电路的衬底、顶层金属层、通孔层和像元阵列，所述像元阵列中的每一个像元包括从上到下依次层叠的微桥谐振腔和铝反射层，所述铝反射层位于所述微桥谐振腔和通孔层之间，所述微桥谐振腔上表面为所述像元接收入射光的表面；其中，所述带有处理电路的衬底和顶层金属层为平面水平结构，所述微桥谐振腔上表面与所述带有处理电路的衬底和顶层金属层之间呈倾斜锐角设置。因此，本发明能够在缩减平面投影面积的情况下，将实际吸收入射光的面积保持不变甚至增大。

红外线传感器、红外线传感器阵列及红外线传感器的制造方法

本公开提供进一步提高红外线传感器的灵敏度的技术。本公开的红外线传感器具备：基底基板；测辐射热计红外线受光部；第1梁；及第2梁，在此，第1梁及第2梁各自具有与基底基板和/或基底基板上的构件连接的连接部和与基底基板分离的分离部，并且在分离部处与红外线受光部物理地接合，红外线受光部通过第1梁及第2梁以与基底基板分离的状态被支承，红外线受光部包括由电阻根据温度而变化的电阻变化材料形成的电阻变化部，电阻变化部由非晶质的半导体形成，第1梁及第2梁各自由结晶质的半导体形成且在分离部处与电阻变化部电连接，该结晶质的半导体由与电阻变化材料的母材相同的母材形成。

一种红外热成像传感器像元及红外热成像传感器

本发明提供一种红外热成像传感器像元及红外热成像传感器，涉及传感器像元领域，包括：桥墩、桥臂、桥面、互连通孔、热敏电阻以及释放孔；所述像元结构整体呈现夹心式叠层结构，所述顶铝处于所述像元结构最底层，所述桥面处于所述像元结构最顶层，所述桥墩、桥臂、互连通孔以及所述热敏电阻均处于所述叠层结构内部。通过夹心式叠层结构设计加大热敏电阻可排布面积，提高了整体像元结构利用率，并降低了材料的闪烁噪声。结合桥臂所用折叠式排布，在有限空间内进一步加大桥臂长度，进而降低了像元结构热导，提升了像元结构整体响应率。另外，中心释放孔的设计，在不破坏热敏电阻的情况下，优化了PI牺牲层在燃烧过程中对于PI胶的释放。

Infrared sensor, infrared sensor array, and method of manufacturing infrared sensor

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.

Robust MEMS Structure with Via Cap and Related Method

Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

一种光谱分离与全透复合的超像素红外探测器

本发明公开了一种光谱分离与全透复合的超像素红外探测器，在平面结构红外探测芯片的衬底上制备具有光谱分离功能的波段分束阵列，入射的宽谱红外光透过红外波段分束阵列表面微纳结构区域后发生光谱分离，不同波长红外光分别照射至超像素的第一亚像元、第二亚像元和第三亚像元。经过红外波段分束阵列无表面微纳结构区域的全透红外光照射至超像素的第四亚像元。四个亚像元分别输出信号，利用图像合成得到红外彩色图像，同时利用图像增强融合技术获得目标更丰富的细节信息。该探测器具有探测波段丰富、信号利用率高、微型化，利用红外波长分束阵列与平面结构红外探测芯片构建超像素红外探测器的优点。

一种基于辐射光谱的蓝宝石接种点高精度感知装置及方法

本发明提出一种基于辐射光谱的蓝宝石接种点高精度感知装置及方法，属于安全定位技术领域；目的是解决目前人工接种技术的误判率高及自动化程度低的问题，且不必检测最佳接种点的单一相关图像特征及复杂热场变化；技术方案和技术效果为，本发明利用坩埚内环境为真空这一特点，大大降低了电磁波传播过程中的损耗，结合高温熔体表面所发射的波长对温度的高敏感特征，通过实时分析光谱的变化特征判断温度场的稳定性，当连续光谱曲线逐渐趋于一致时，说明此时液面温度场处于稳定状态，可以考虑接种。通过比较连续时间点的光谱曲线有效的消除了系统误差的影响，预测接种的误判率低，且光谱检测采样周期短，满足了对检测实时性和自动化的需求。

ボロメータ及びその製造方法

【課題】 簡便な方法で微小なボロメータ膜及びそれを用いたボロメータを製造する方法を提供する。【解決手段】 本発明は、基板上に、該基板と半導体型カーボンナノチューブとの結合性を高める機能を有する中間層を、所定のパターン形状に形成する工程と、形成した中間層上に、半導体型カーボンナノチューブ分散液の液滴を提供する工程を含む、ボロメータ製造方法に関する。【選択図】図５

一种响应波段可选的非制冷红外探测器及其制备方法

本发明公开了一种响应波段可选的非制冷红外探测器及其制备方法。器件直接采用硅基CMOS读出电路作为衬底，可实现单片式集成。选用具有宽波段响应特性的锰钴镍氧热敏电阻薄膜作为红外吸收层，采用无传统微桥的新型探测器结构，不存在微桥结构可能面临的桥面坍塌风险，提高了成品率，降低了制备成本，并可实现全波段响应。在此基础上，结合三个大气窗口的带通滤光片的循环切换，通过对不同波段的信号数据进行加减融合等算法处理，实现单波段、双波段、三波段和全波段探测功能，可获取更丰富的目标信息，提高成像对比度，增加目标识别能力。本发明器件及其制备方法工艺成熟，与标准的硅集成电路工艺兼容，适用于单元、线列及面阵红外探测器。

전류를 적분하기 위한 높은 동적 디바이스

본 발명은, 적분 노드 상에서 수신되는 전류를 적분하는 디바이스(100a)로서, - 연산 증폭기(62); - 적분 커패시터(64); - 적분 노드 상에 연결되어 전하를 적분 커패시터에 전달하도록 구성되는 전하 전달 회로에 의해 형성되는 연산 증폭기의 출력 전압을 변경하기 위한 회로(105a); - 이 적분 기간 동안 적어도 한 번 이 변경 회로를 트리거하도록 구서오디는 보상 회로(74); 및 이 적분 기간 동안 발생한 이러한 트리거 횟수를 저장하도록 구성되는 저장 회로를 포함하는 디바이스(100a)에 관한 것이다. 수신된 전류는 이 출력 전압과, 이 변경 회로에 의해 야기되는 이 출력 전압의 변경에 의해 곱해진 이러한 트리거 횟수에 따라 계산된다.

照射装置和具有该照射装置的加工机

本发明涉及一种用于为执行焊接过程而借助加工射束、尤其借助激光射束(3)照射加工区(8)的照射装置(1)，具有：扫描装置(4)，用于将所述加工射束对准在所述加工区(8)中的加工位置(XP,YP)。照射装置(1)具有成像装置(9)，用于将所述加工区(8)的子区域成像到具有至少两个高温计部段的高温计(17)上，其中，成像装置(9)将从在加工区(8)中的加工位置(X P ,Y P )出发的热辐射(19)成像到第一高温计部段(20)上，成像装置(9)将从在加工区(8)中沿着加工射束在加工区(8)的进给方向(v R )位于加工位置(X P ,Y P )前面或后面的位置出发的热辐射(19)成像到至少一个第二高温计部段上。本发明还涉及一种具有这样的照射装置的加工机(10)。

Bias circuit with improved noise performance

Bias circuit elements for applying voltages/currents to a photodetector are described. Bias circuit elements described are active devices, e.g. mosfets, directly connected to the photodetector signal point, which inject noise that will be amplified/integrated. Lowering 1/f noise in these bias devices uses multiple parallel mosfets and switching the parallel mosfets gates between a bias activation level signal and a voltage sufficient to drive the mosfet into accumulation Gate switching may be accomplished by at least two partially out of phase clocking signals, with at least one parallel mosfet applying bias while another is in accumulation in continuously switched time periods. Gate switching at a frequency higher than the imaging bandwidth, will have negligible effect on the image signal. During the accumulation phase traps present within the conducting channel of each MOSFET will be depopulated, essentially resetting the MOSFET's 1/f noise, allowing for long integration times while controlling 1/f noise.

一种具有红外线检测的电缆

本发明公开了一种具有红外线检测的电缆，涉及光伏领域，包括：主体；护套，电源线，填充物，传输线，红外元器件。护套套设在主体上，护套内部具有中空的空腔，护套用于防止具有红外线检测的电缆损坏；电源线具有多条，电源线设置在护套的空腔内，电源线用于给具有红外线检测的电缆进行供电；填充物设置在护套的空腔内，填充物用于保护护套的空腔内的物体；传输线设置在护套的空腔内，传输线用于对红外线信息进行传输；红外线元器件设置在护套的空腔内，红外元器件用于对主体外的物体进行检测。通过通过在电缆中设置有红外元器件，可以使其具有红外检测的功能，同时电缆可以放置在墙体或土地中，具有很高的隐蔽性，不易被发现。

一种多结型锗基长波红外探测器及制备方法

本发明公开了一种多结型锗基长波红外探测器及制备方法，所述探测器由锗基底、电极区、吸收区、阻挡区、引线电极和钝化层组成，制备方法包括四个步骤，即通过光刻、离子注入、快速退火、薄膜淀积和干法刻蚀等工艺在高阻锗基底上依次形成吸收区、电极区、钝化层和引线电极。本发明制备的长波红外探测器，在传统阻挡杂质带探测器结构的基础上，引入多个吸收区和阻挡区，从而获得多个耗尽区，使得耗尽区宽度增加，器件有效吸光区域增大，探测器的响应率和探测率得到提高。本发明的制备方法与当前的半导体工艺技术相兼容，研发和生产成本低。

Atomic layer deposition of vanadium oxide for microbolometer and imager

This disclosure describes a microbolometer sensor element and microbolometer array imaging devices optimized for infrared radiation detection that are enabled using atomic layer deposition (ALD) of vanadium oxide material layer (VOx) for a temperature sensitive resistor.

Sensor configured to sense heat or infrared light and electronic device including same

A sensor configured to sense heat or infrared light including a substrate includes a plurality of recess portions; a cavity inside the substrate along a bottom surface and opposing side surfaces of the substrate; a lower reflective layer disposed on at least one of an upper surface of the bottom surface of the substrate, a lower surface of the bottom surface of the substrate, and a surface opposite to the lower surface of the bottom surface of the substrate; a first electrode and a second electrode disposed inside both side surfaces of the recess portion and facing each other; a pixel structure configured to sense heat or infrared light inside the recess portion and embedded in the substrate; and a planarization layer covering the entire upper portion of the substrate.

Microbolometer and method of manufacturing the same

The present disclosure provides a microbolometer including a substrate, a readout circuit layer disposed above the substrate, a first vanadium oxide layer disposed above the readout circuit layer, a second vanadium oxide layer disposed on the first vanadium oxide layer, and an infrared absorbing layer disposed above the second vanadium oxide layer, in which an oxygen content of the second vanadium oxide is higher than that of the first vanadium oxide layer.

一种非制冷红外探测器的真空封装组件

本发明公开了一种非制冷红外探测器的真空封装组件。热电致冷器通过金属焊料焊接在外壳上，热电致冷器的引线焊接在外壳的热电致冷器电连针上；具有吸附气体功能的吸气剂与外壳的吸气剂针通过电阻焊工艺进行连接，具有特定造型的不锈钢金属薄片焊接在吸气剂与热电致冷器之间；非制冷红外探测器芯片粘贴在热电致冷器的冷端面上，然后通过键合工艺与外壳上的芯片电连针连接；窗口与管帽通过金属焊料焊接，然后与外壳平行缝焊密封；平行缝焊完成后将组合件通过排气管与一真空装置的腔体连接，并使组合件处于一定温度下，排气一段时间；排气结束后，冷夹封排气管，封口涂布保护胶。

340 GHz multipixel transceiver

A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

一种铟镓砷短波红外探测器

本发明公开了一种铟镓砷短波红外探测器。器件结构从上至下依次包括钝化层，窗口层，吸收层，缓冲层，读出电路，金属电极和互连通孔。其中，金属电极制备在缓冲层上。互连通孔制备在光敏元上，形成一个锥形通孔。互连通孔只与窗口层和读出电路连通。钝化层覆盖了除金属电极以外的器件表面，同时在互连通孔锥形下半部形成内部绝缘隔离。本器件结构特征在于新型铟镓砷短波红外探测器在光敏元上引入一个锥形的通孔，然后在通孔中填充互连金属连接窗口层与读出电路，使得探测器光敏元从材料内部就可以与读出电路进行互连。这种结构具有结构紧凑、易集成，能有效提高探测器在三维方向的堆叠密度，是未来发展微系统的核心技术。

一种宽波段硅基红外探测芯片及成像系统

本发明公开了一种宽波段硅基红外探测芯片及成像系统，所述宽波段硅基红外探测芯片为阵列器件，所述阵列器件包括多个单元器件，所述单元器件设置在N阱中，其包括超材料红外聚焦结构、光波传输结构、肖特基光电转换结构和电流传输结构。本发明中的宽波段硅基红外探测芯片，其制程摈弃昂贵的红外吸收材料后，可与标准硅基CMOS工艺具有良好的兼容性，制备工艺具有均一性好、重复性高等优势，为大面阵和规模化方向发展提供了标准工艺保障，为民用领域的低成本应用带来了新机遇。

열 또는 적외선 감지용 센서 및 이를 포함하는 전자장치

복수의 오목부를 포함하는 기판; 상기 기판의 하부면과 양 측면을 따라 기판의 내부에 형성된 공동(cavity); 상기 기판 하부면의 상부 표면, 기판 하부면의 하부 표면 및 기판 하부면의 하부 표면에 대향하는 면중 적어도 하나의 면에 형성된 하부 반사층; 상기 오목부의 양 측면 내부에 형성되고 서로 마주보는 제1 전극과 제2 전극; 상기 오목부의 내부에 형성되어 기판 내부에 매립된 열 또는 적외선 감지용 픽셀 구조체; 및 상기 기판의 상부 전체를 덮는 평탄화층을 포함하는 열 또는 적외선 감지용 센서를 제공한다.

一种三维跨界面成像方法

本发明提供一种三维跨界面成像方法，将石英缸套所围空间离散为多个体素层，并建立逆向光线追踪关系，以找到从CCD平面上的像素出发，穿过镜头中心到各体素层上的位置的唯一对应关系；然后通过线性插值将反向对应关系转换成各体素层到CCD平面的正向光路追踪关系，再从体素开始，正向计算从各体素块到像素的对应关系和投影权重，得到石英缸套所围空间中任意点到CCD平面的点扩散函数；最后通过点扩散函数实现放置于石英缸套中的待测目标在CCD平面上的成像；因此，本发明不需要多次迭代即可解决受限空间层析成像投影失真问题，能够显著提高解决受限空间层析成像问题的精度；同时适用于光学圆柱体、表面方程可以计算或插值的其他瞬态光学壁的受限空间层析成像问题。

一种光谱分离与全透复合的超像素红外探测器

一种光谱分离与全透复合的超像素红外探测器，在平面结构红外探测芯片(2)的衬底(2-5)上制备具有光谱分离功能的红外波段分束阵列(1)，入射的宽谱红外光透过红外波段分束阵列(1)表面微纳结构区域(1-1)后发生光谱分离，不同波长红外光分别照射至超像素的第一亚像元(2-1)、第二亚像元(2-2)和第三亚像元(2-3)。经过红外波段分束阵列(1)无表面微纳结构区域(1-2)的全透红外光照射至超像素的第四亚像元(2-4)。四个亚像元(2-1，2-2，2-3，2-4)分别输出信号，利用图像合成得到红外彩色图像，同时利用图像增强融合技术获得目标更丰富的细节信息。具有探测波段丰富、信号利用率高、微型化，利用红外波段分束阵列(1)与平面结构红外探测芯片(2)构建超像素红外探测器的优点。

一种光谱分离与全透复合的超像素红外探测器

本发明公开了一种光谱分离与全透复合的超像素红外探测器，在平面结构红外探测芯片的衬底上制备具有光谱分离功能的波段分束阵列，入射的宽谱红外光透过红外波段分束阵列表面微纳结构区域后发生光谱分离，不同波长红外光分别照射至超像素的第一亚像元、第二亚像元和第三亚像元。经过红外波段分束阵列无表面微纳结构区域的全透红外光照射至超像素的第四亚像元。四个亚像元分别输出信号，利用图像合成得到红外彩色图像，同时利用图像增强融合技术获得目标更丰富的细节信息。该探测器具有探测波段丰富、信号利用率高、微型化，利用红外波长分束阵列与平面结构红外探测芯片构建超像素红外探测器的优点。

一种适用于曲面成像的焦平面探测器及其制备方法

本发明提供一种适用于曲面成像的焦平面探测器及其制备方法，所述的适用于曲面成像的焦平面探测器包括：支撑衬底；赋形焦平面阵列，位于所述支撑衬底的表面，赋形焦平面阵列和支撑衬底的曲面形状保持一致。采用这种结构可以始终保持光线聚焦在焦平面探测器上，不需要通过复杂的光学校正计算便可以保证最大程度的成像效果，该结构适合大视场、大面阵高分辨率成像。所述的制备方法使用了PDMS柔性模具对硅基焦平面进行赋形，并且使用紫外固化材料和紫外光照进行定形，过程简单，成形过程不需要复杂昂贵的仪器和设备，并且制备效率高。