ДЕТЕКТОР ЭЛЕКТРОМАГНИТНОГО ИЗЛУЧЕНИЯ С МИКРОИНКАПСУЛЯЦИЕЙ И УСТРОЙСТВО ДЛЯ ОБНАРУЖЕНИЯ ЭЛЕКТРОМАГНИТНЫХ ИЗЛУЧЕНИЙ, ИСПОЛЬЗУЮЩЕЕ ТАКИЕ ДЕТЕКТОРЫ

1. Детектор электромагнитного излучения, предназначенный для функционирования приблизительно при предпочтительной длине волны λp, находящейся в пределах спектрального диапазона, представляющего интерес, то есть заданной между λmin и λmax, содержащий множество элементарных детектирующих микроучастков, каждый из которых включает в себя микродетектор, снабженный мембраной (2), чувствительной к излучению, по меньшей мере, в спектральном диапазоне, представляющем интерес, и каждый из них размещен в микрополости или микрокапсуле, образованной подложкой (1), верхней стенкой (5), используемой в качестве окна, прозрачного для излучения в спектральном диапазоне, представляющем интерес, по меньшей мере, для некоторых микроучастков из указанного множества, и боковыми стенками (4), причем мембрана (2) подвешена над подложкой (1) посредством, по меньшей мере, двух опорных рычагов (6), которые включают в себя электропроводящий слой (17), отличающийся тем, что концы упомянутых рычагов (6) закреплены в боковых стенках (4). ! 2. Детектор электромагнитного излучения по п.1, отличающийся тем, что, по меньшей мере, некоторые из микрополостей герметизированы. ! 3. Детектор электромагнитного излучения по п.2, отличающийся тем, что герметизированные микрополости содержат газ, обладающий низкотемпературной проводимостью, такой как аргон, криптон или ксенон. ! 4. Детектор электромагнитного излучения по п.1, отличающийся тем, что боковые стенки (4), которые образуют упомянутые микрополости или микрокапсулы, состоят из двух плотно соединенных частей: ! - первой нижней части (4А), которая прикреплена к подложке (1) и образует общие основания периферийных ст� РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2011 105 416 (13) A (51) МПК G01J 5/20 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2011105416/28, 06.10.2009 (71) Заявитель(и): ЮЛИС (FR) Приоритет(ы): (30) Конвенционный приоритет: 07.10.2008 FR 0856790 (72) Автор(ы): ВИЛЕН Мишель (FR) (85) ...

CMOS-Bolometer

Ein Verfahren für das Herstellen einer Halbleitereinrichtung beinhaltet das Bilden wenigstens einer Opferschicht auf einem Substrat während eines komplementären Metalloxid-Halbleiter-(CMOS-)Prozesses. Eine Absorberschicht wird auf der Oberfläche der wenigstens einen Opferschicht abgelagert. Ein Teilbereich der wenigstens einen Opferschicht unterhalb der Absorberschicht wird entfernt, um eine Lücke zu bilden, über welche ein Teilbereich der Absorberschicht aufgehängt ist. Die Opferschicht kann ein Oxid des CMOS-Prozesses sein, wobei das Oxid entfernt wird, um die Lücke zu bilden, wobei ein selektiver Wasserstoff-Fluorsäure-Dampf-Trockenätz-Freigabeprozess benutzt wird. Die Opferschicht kann auch eine Polymerschicht sein, wobei die Polymerschicht entfernt wird, um die Lücke zu bilden, wobei ein O2-Plasma-Ätzprozess benutzt wird.

Optically transitioning thermal detector structures

Frequency selective imaging system

Micromachined infrared sensitive pixel and infrared imager including same

THERMOELECTRIC DEVICE

L'invention concerne une cellule thermoélectrique à pistes thermoélectriques (52A, 52B, 53A, 53B) de types alternés reliées en série par des liaisons métalliques (54A, 54B), comprenant une plateforme (42) suspendue au-dessus d'un support par des bras (44A, 44B, 45A, 45B), la plateforme et les bras étant des parties d'une même couche isolante thermiquement et électriquement, et chaque bras portant une piste thermoélectrique.

ELECTROMAGNETIC RADIATION SENSOR AND METHOD OF MANUFACTURE

A method of forming a semiconductor sensor (100) includes providing a substrate, (102) forming a reflective layer (104) on the substrate, forming a sacrificial layer on the reflective layer, forming an absorber layer (106) with a thickness of less than about 50 nm on the sacrificial layer, forming an absorber in the absorber layer integrally with at least one suspension leg, (110) and removing the sacrificial layer.

ELECTROMAGNETIC RADIATION DETECTOR WITH MICRO-ENCAPSULATION, AND DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION USING SUCH DETECTORS

Ce détecteur de rayonnement électromagnétique est constitué d'une pluralité de microsites de détection élémentaires comprenant chacun un micro-détecteur muni d'une membrane (2) sensible au rayonnement considéré, et reçu chacun dans une microcavité ou microcapsule, définie par un substrat (1), par une paroi supérieure (5) faisant fonction de fenêtre transparente audit rayonnement et par des cloisons latérales (4), ladite membrane (2) étant suspendue au dessus du substrat (1) au moyen d'au moins deux bras de soutien (6) comportant une couche (17) électriquement conductrice, les extrémités desdits bras (6) étant ancrées dans les cloisons latérales (4).

Bolometric detector production comprises use of sacrificial auxiliary layer to connect reading circuit to bolometric substrate of polycrystalline silicon to detect infrared radiation

The production of a bolometric detector comprises, from a reading circuit produced on a silicon substrate (1): (a) forming a first auxiliary sacrificial layer (3) on the silicon substrate, destined to be removed after the realization of the detector in order to thermally decouple the reading circuit of the detection module; and (b) forming on this sacrificial layer a layer of bolometric material of amorphous silicon (5) and electrodes to carry the necessary electric signals for the operation of the bolometer and to send the signal resulting from the detection of infrared radiation by the bolometer to the reading circuit. The layer of bolometric material is subjected to a laser radiation to transform it into a polycrystalline silicon. An Independent claim is also included for a bolometric detector using polycrystalline silicon as the bolometric material.

DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION COMPRISING A SUSPENDED THREE-DIMENSIONAL STRUCTURE

L'invention porte sur un dispositif de détection d'un rayonnement électromagnétique comportant un substrat et au moins un détecteur thermique (20), lequel comporte une structure tridimensionnelle (22) dans laquelle un réflecteur (40) s'étend de manière planaire dans un étage intermédiaire, distinct et situé entre un étage inférieur comportant les bras d'isolation thermique (30) et un étage supérieur comportant la membrane absorbante (60).

ELECTROMAGNETIC DETECTOR OF RADIATION HAS THERMOMETER HAS NANOFIL AND METHOD FOR REALIZATION

Le détecteur de rayonnement électromagnétique comporte au moins une membrane (1) suspendue au-dessus d'un substrat (2) par au moins un nanofil. Le nanofil forme un thermoélément comportant une âme (8) et une couche extérieure (9) électriquement conductrices, respectivement dopé de type différent, et isolées l'une de l'autre par une couche d'isolation électrique (10). Lorsque le substrat (2) et la membrane (1) sont à des températures différentes, le nanofil constitue un thermomètre, fournissant par effet Seebeck, des signaux de mesure représentatif de l'échauffement de la membrane. The electromagnetic radiation detector comprises at least one membrane (1) suspended above a substrate (2) by at least one nanowire. The nanowire forms a thermoelement comprising a core (8) and an outer layer (9) electrically conductive, respectively doped different type, and isolated from each other by an electrical insulation layer (10). When the substrate (2) and the membrane (1) are at different temperatures, the nanowire constitutes a thermometer, providing by Seebeck effect, measurement signals representative of the heating of the membrane.

MANUFACTORING PROCESS Of a DETECTOR BOLOMETRIQUE

Le procédé est destiné à la fabrication d'un détecteur bolométrique muni d'une membrane (1) suspendue au-dessus d'un substrat par l'intermédiaire de bras d'isolation thermique fixés au substrat par des points d'ancrage. La membrane (1) possède une couche mince sensible à la température à base d'au moins un oxyde de fer semi-conducteur (9). Le procédé comporte au moins une étape de réduction et/ou d'oxydation localisée(s) de la couche mince d'oxyde de fer semi-conductrice (9) pour modifier le degré d'oxydation de l'atome de fer d'une partie de la couche mince d'oxyde de fer semi-conductrice (9). The method is intended for the manufacture of a bolometric detector provided with a membrane (1) suspended above a substrate by means of thermal insulation arms fixed to the substrate by anchoring points. The membrane (1) has a thin temperature sensitive layer based on at least one semiconductor iron oxide (9). The method comprises at least one localized reduction and / or oxidation step (s) of the thin semiconducting iron oxide layer (9) to modify the degree of oxidation of the iron atom of a part of the thin layer of semiconducting iron oxide (9).

Blackbody Radiation Source and Preparation Method of Blackbody Radiation Source

Microelectromechanical infrared sensing apparatus having stoppers

A microelectromechanical infrared sensing apparatus is provided, which includes a substrate, a sensing plate, a plurality of supporting elements and a plurality of stopper. The substrate includes an infrared reflecting layer. The sensing plate includes an infrared absorbing layer. The supporting elements are disposed on the substrate; each of the supporting elements is connected to the sensing plate, such that the sensing plate is suspended above the infrared reflecting layer. The stoppers are disposed between the substrate and the sensing plate. When the sensing plate moves toward the infrared reflecting layer and the stoppers contact the substrate or the sensing plate, the distance between the sensing plate and the infrared reflecting layer is substantially equal to the height of at least one of the stoppers.

INFRARED DETECTING DEVICE

An infrared detecting device comprises a substrate and a thermal photo detecting element. The substrate has a concave portion and a frame portion located around the concave portion. The thermal photo detecting element has a leg portion and a detecting portion, and the leg portion is connected on the frame portion so that the detecting portion is located above the concave portion. Moreover, the thermal photo detecting element has a first electrode layer provided on the substrate, a detecting layer provided on the first electrode layer, and a second electrode layer provided on the detecting layer. The linear thermal expansion coefficient for the first electrode layer is greater than the linear thermal expansion coefficient for the substrate, and the linear thermal expansion coefficient for the substrate is greater than the linear thermal expansion coefficient for the detecting layer.

ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME

An electronic device comprises a cavity surrounded by a cavity wall and evacuated, a thin gettering film disposed in the cavity and having the function of adsorbing surrounding substance, and an activating section at least a part of which is disposed in the cavity and which has the function of activating the thin gettering film by heat generation.

Sensor device

A sensor device includes a sensor array in which infrared sensors are arrayed and a detection circuit connected to the output signal line of the sensor array. The detection circuit includes a capacitor having a charging circuit which is selectively driven, a sense amplifier circuit which detects and amplifies a change in sensor current flowing to the output signal line, a current-to-voltage conversion circuit which converts the output current from the sense amplifier circuit into a voltage, a discharging circuit which is controlled by the output voltage of the current-to-voltage conversion circuit to discharge the capacitor, and an output circuit which outputs the terminal voltage of the capacitor.

Thermal electromagnetic radiation detector comprising an absorbent membrane fixed in suspension

The absorbent membrane of the detector is fixed in suspension by at least one thermally insulating support part onto a front face of a substrate comprising at least two electric connection terminals electrically connected to the membrane, for example by means of conducting layers. The support part has at least one base end and a raised zone. The base end is fixed to a top part of a conducting pillar having a base fixedly secured to one of the electric connection terminals. A substantially flat zone of a bottom face of the membrane is directly in contact with the raised zone of the support part. The support part is preferably formed by a bridge having a second base end fixed to a top part of a second pillar, the raised zone being formed by a flat middle part of the bridge.

INFRARED RAY DETECTION DEVICE, METHOD OF FABRICATING THE SAME AND INFRARED RAY CAMERA

An infrared ray detection device has a detection cell which has a thermoelectric converting part and an infrared ray absorption layer formed via a space on a semiconductor substrate, a first wiring part formed on the semiconductor substrate, and a supporting part, the detection cell being formed via the space on the semiconductor substrate and supports the detection cell. The supporting part includes a plurality of supporting legs which have a second wiring part electrically connecting the first wiring part to the detection cell and an insulating part covering a surrounding are of the second wiring part, and at least one connection part made of an insulating material connecting the plurality of supporting legs to each other.

Radiation sensor, waver, sensor module, and method for the production a radiation sensor

A radiation sensor ( 10 ) comprises a support ( 1 ), a cavity ( 2 ) which may be a recess or a through hole formed in one surface of the support ( 1 ), a sensor element ( 4, 4 a, 4 b) formed above the cavity ( 2 ), preferably on a membrane ( 3 ) covering the cavity ( 2 ), and electric terminals ( 5, 5 a, 5 b) for the sensor element ( 4, 4 a, 4 b). The cavity ( 2 ) in the surface of the support ( 1 ) has a fully or partly rounded contour ( 2 a).

Electromagnetic wave detector, electromagnetic wave detector array, and gas analyzing apparatus

An electromagnetic wave detector that selectively detects electromagnetic waves of wavelength λA includes a temperature detection unit that includes: a substrate including a cavity portion; a wavelength selection structure that generates a surface plasmon resonance with an electromagnetic wave of a predetermined wavelength λA for converting to heat and absorbing, and a detection film that detects the absorbed heat; and a support structure that retains the temperature detection unit above the cavity portion; wherein the support structure further includes a reflection structure that reflects the electromagnetic waves of the absorption wavelength of the support structure.

Radiation detector and method for manufacturing a radiation detector

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate.

RADIATION SENSOR, WAFER, SENSOR MODULE, AND METHOD FOR THE PRODUCTION OF A RADIATION SENSOR

NANOTHERMOCOUPLE DETECTOR BASED ON THERMOELECTRIC NANOWIRES

METHOD FOR DETERMINING A TEMPERATURE WITHOUT CONTACT, AND INFRARED MEASURING SYSTEM

ДЕТЕКТОР ЭЛЕКТРОМАГНИТНОГО ИЗЛУЧЕНИЯ С МИКРОИНКАПСУЛЯЦИЕЙ И УСТРОЙСТВО ДЛЯ ОБНАРУЖЕНИЯ ЭЛЕКТРОМАГНИТНЫХ ИЗЛУЧЕНИЙ, ИСПОЛЬЗУЮЩЕЕ ТАКИЕ ДЕТЕКТОРЫ

FIELD: measurement; testing. SUBSTANCE: invention relates to the field of optical instrumentation and relates to an electromagnetic radiation detector. Detector comprises a plurality of micro-sites, each including a radiation sensitive membrane. Each micro-site is located in a microcavity formed by a substrate used as a transparent window by an upper wall and side walls attached to the substrate and the upper wall. Membrane is suspended above the substrate by means of support arms which include an electrically conductive layer. Ends of the support arms are fixed in the side walls. Substrate and side walls are made of successive layers which are directly formed one above the other by deposition. EFFECT: technical result consists in increasing the spatial resolution and sensitivity of the device. 32 cl, 20 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 662 025 C2 (51) МПК G01J 5/20 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК G01J 5/20 (2006.01) (21)(22) Заявка: 2014146155, 17.11.2014 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): ЮЛИС (FR) Дата регистрации: 23.07.2018 (56) Список документов, цитированных в отчете о поиске: WO 2007000172 A1, 04.01.2007. US 2002175284 A1, 28.11.2002. US 2007170363 A1, 26.07.2007. RU 2258207 C1, 10.08.2005. 07.10.2008 FR 0856790 (43) Дата публикации заявки: 10.06.2016 Бюл. № 16 (45) Опубликовано: 23.07.2018 Бюл. № 21 2 6 6 2 0 2 5 (54) ДЕТЕКТОР ЭЛЕКТРОМАГНИТНОГО ИЗЛУЧЕНИЯ С МИКРОИНКАПСУЛЯЦИЕЙ И УСТРОЙСТВО ДЛЯ ОБНАРУЖЕНИЯ ЭЛЕКТРОМАГНИТНЫХ ИЗЛУЧЕНИЙ, ИСПОЛЬЗУЮЩЕЕ ТАКИЕ ДЕТЕКТОРЫ (57) Реферат: Изобретение относится к области оптического посредством опорных рычагов, которые приборостроения и касается детектора включают в себя электропроводящий слой. электромагнитного излучения. Детектор содержит Концы опорных рычагов закреплены в боковых множество микроучастков, каждый из которых стенках. Подложка и боковые стенки выполнены включает в себя ...

ДАТЧИК ТЕПЛОВОГО ИЗЛУЧЕНИЯ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

Использование: для тепловой изоляции детекторов теплового излучения. Сущность изобретения заключается в том, что прибор для теплового детектирования инфракрасного излучения включает в себя пиксель на полупроводниковой подложке, пиксель включает в себя первую секцию и вторую секцию, первая секция находится на поверхности полупроводниковой положки и включает в себя электрические цепи, вторая секция отделена от первой секции и находится непосредственно над ней, вторая секция является планарной и включает в себя ножки, микро-мембрану и расположенный на ней температурный детектор, вторая секция поддерживается колоннами, одна из ножек имеет один конец интегрально соединенный с микро-мембраной и другой конец интегрально соединенный с одной из колонн, другая из ножек имеет один конец, интегрально соединенный с микро-мембраной, и другой конец, интегрально соединенный с другой из колонн, ножки обеспечивают электрическое соединение температурного детектора с электрическими цепями через соответствующие ...

ЭЛЕКТРОННОЕ ДЕТЕКТИРУЮЩЕЕ УСТРОЙСТВО И ДЕТЕКТОР, СОДЕРЖАЩИЙ ТАКОЕ УСТРОЙСТВО

... 1. Электронное детектирующее устройство, содержащее подложку (1; 301; 401) и по меньшей мере одну микроструктуру, указанная микроструктура содержит мембрану (9; 309; 409) и по меньшей мере один удлиненный удерживающий элемент (21, 22), указанная мембрана расположена, по существу, напротив указанной подложки (1; 301; 401) и на расстоянии от нее и механически прикреплена и электрически соединена с указанным удлиненным удерживающим элементом, который механически и электрически соединен с подложкой (1; 301; 401) посредством по меньшей мере одной опоры (5; 305; 405), отличающееся тем, что микроструктура также содержит по меньшей мере один элемент (10-13; 310; 313; 413; 413'; 420), имеющий полое сечение и проходящий по меньшей мере по одной из основных поверхностей указанной микроструктуры. 2. Электронное детектирующее устройство по п.1, отличающееся тем, что элемент жесткости идет в направлении, поперечном основной поверхности микроструктуры. 3. Электронное детектирующее устройство по п.1 или ...

Printed circuit board monitoring device for e.g. resistor of electronic device, has photo-detector with light sensitive surface arranged at distance to surfaces of circuit board, where sensitive surface is turned towards surface of board

The device has a printed circuit board (PCB) (30) with a surface (31), which is fitted with electronic components, where the board has another surface (32) that is turned away from the surface (31). A laminar photo-detector (1) has a light sensitive surface, which is arranged at a distance to the surfaces (31, 32) of the circuit board, where the light sensitive surface is turned towards the corresponding surface of the circuit board. The photo-detector receives light in an infrared area during the operation of the components, where the light is emitted due to heating of the components. An independent claim is also included for a method for monitoring a printed circuit board (PCB), which is fitted with electronic components.

Optically transitioning thermal detector structures

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.

Infrared thermal sensor with beams having different widths

An infrared thermal sensor or pixel 10 for detecting infrared radiation is described. It comprises a substrate (1, Fig.2) and a cap structure (2, Fig.2) together forming a sealed cavity 3. A membrane or diaphragm 4 is suspended therein by a plurality of beams or webs 5a, 5b, 5c, each beam comprising at least one thermocouple (6, Fig. 2) arranged therein or thereon for measuring a temperature difference (ΔT) between the membrane and the substrate. At least two beams have a different length La, Lb and each of the thermocouples have a substantially same constant width Wa, Wb to length La, Lb ratio such that the thermal resistance measured between the membrane and the substrate is substantially constant for each beam 5a, 5b, 5c, and such that the electrical resistance measured between the membrane and the substrate is substantially constant for each beam. The filling factor of the membrane (4, Fig. 2) may be less than 50%. The membrane may be substantially circular or rectangular in cross ...

BOLOMETRI DETECTOR WITH THERMAL ISOLATION BY NARROWING

RADIATION SENSOR, WAFER, SENSOR MODULE AND PROCEDURE FOR THE PRODUCTION OF A RADIATION SENSOR

Infrared radiation detector having a reduced active area

RADIATION SENSOR, WAFER, SENSOR MODULE, AND METHOD FOR THE PRODUCTION OF A RADIATION SENSOR

Disclosed is a radiation sensor (10) comprising a support (1), a lowered area (2) that is embodied within a surface of the support (1) and can represent a depression or a through hole, a sensor element (4, 4a, 4b) which is embodied above the lowered area (2), preferably on a membrane (3) spanning the lowered area (2), and electrical contacts (5, 5a, 5b) for the sensor element (4, 4a, 4b). The lowered area (2) has an entirely or partly rounded contour (2a) within the surface of the support (1).

THERMAL ELECTROMAGNETIC RADIATION DETECTOR COMPRISING AN ABSORBENT MEMBRANE FIXED IN SUSPENSION

The absorbent membrane (1) of the detector is fixed in suspension by at least one thermally insulating support part (5ab) onto a front face of a substrate (2) comprising at least two electric connection terminals (3) electrically connected to the membrane (1), for example by means of conducting layers (9). The support part (5ab) has at least one base end (6) and a raised zone (7). The base end (6) is fixed to a top part of a conducting pillar (8) having a base fixedly secured to one of the electric connection terminals (3). A substantially flat zone of a bottom face of the membrane (1) is directly in contact with the raised zone (7) of the support part (5ab). The support part (5ab) is preferably formed by a bridge having a second base end (6) fixed to a top part of a second pillar (8), the raised zone (7) being formed by a flat middle part of the bridge.

MICROBOLOMETER DETECTOR WITH CENTRALLY-LOCATED SUPPORT STRUCTURE

A microbolometer detector having an improved support structure is provided. The microbolometer detector includes a substrate and a support structure including at least one post connected to and projecting substantially vertically from the substrate. The microbolometer detector also includes a platform held above the substrate and including a central region substantially vertically aligned with the at least one post of the support structure and a peripheral region surrounding the central region, the platform being supported by the support structure from the central region thereof. The microbolometer further includes at least one thermistor located in the peripheral region of the platform. A microbolometer focal plane array including a plurality of microbolometer detectors arranged in a two-dimensional array is also provided. Embodiments of the present invention are particularly well suited for supporting relatively large platforms of microbolometer detectors, particularly for far- infrared ...

INFRARED RAY SENSOR AND METHOD OF MANUFACTURING THE SAME

Disclosed is an infrared ray sensor and a method of manufacturing the same. The infrared ray sensor includes a sensor substrate formed of an infrared ray transmitting material and having a first surface and a second surface which is in opposed relation to the first surface, an infrared ray reflecting film provided on the first surface of the sensor substrate, infrared ray detecting elements provided on the second surface of the sensor substrate, and an infrared ray transmitting window formed in the infrared ray reflecting film in relation to the infrare ray detecting elements. The infrared ray which enters the infrared ray transmitting window portion passes through the sensor substrate and is then made incident on the infrared ray detecting elements. Bridges are formed on the second surface of the sensor substrate. Each of the bridges is a silicon oxynitride film having a single layer configuration.

Infrared detection device

THERMAL DETECTOR FOR ELECTROMAGNETIC RADIATION AND INFRARED DETECTION DEVICE USING SAME

DETECTOR BOLOMETRIQUE HAS THERMO ISOLATION BY CONSTRICTION AND INFRA-RED DEVICE OF DETECTION IMPLEMENTING SUCH A DETECTOR BOLOMETRIQUE

Electromagnetic radiation e.g. infrared radiation, thermal detection device, has elementary detectors with thermal insulation arm comprising support end on support, where arm is arranged below membranes of other detectors

Le dispositif de détection thermique de rayonnement électromagnétique comporte une pluralité de détecteurs élémentaires (1a, 1b, 1c), juxtaposés de manière à constituer une matrice. Chaque détecteur élémentaire comporte une membrane (2a, 2b, 2c), sensible au rayonnement, maintenue en suspension sur un support par l'intermédiaire d'éléments de maintien (11), qui isolent thermiquement la membrane du support. Une extrémité d'appui sur le support d'au moins un élément de maintien (11) de chaque détecteur élémentaire est disposée (B) au-dessous de la membrane (2) d'un autre détecteur élémentaire. Les éléments de maintien sont, de préférence, constitués par des bras d'isolation thermique sensiblement linéaires. Chaque élément de maintien (11) a une zone centrale de liaison avec la membrane correspondante pour assurer une liaison électrique au niveau d'un point d'appui (C). Cette zone centrale de liaison peut être constituée par une déformation du bras ou par un plot de liaison électriquement conducteur.

THERMAL DETECTOR OF ELECTROMAGNETIC RADIATION COMPRISING ABSORBING UNEMEMBRANE FIXEE IN SUSPENSION

Thermal detection device for electromagnetic radiation, especially near IR, has independent mechanical connections for interconnecting suspended layers of adjacent micro-bridge detectors

La présente invention concerne un dispositif de détection thermique de rayonnements électromagnétiques comportant au moins deux détecteurs à micro-ponts, dans lequel les couches suspendues des micro-ponts sont reliées entre elles par une connexion mécanique.La présente invention concerne également le procédé de fabrication d'un tel dispositif.

PYROELECTRIC INFRARED DETECTING DEVICE, AND METHOD FOR REPLACING PYROELECTRIC ELEMENT IN PYROELECTRIC INFRARED DETECTING DEVICE

NANOTHERMOCOUPLE DETECTOR BASED ON THERMOELECTRIC NANOWIRES

A nanothermocouple detector includes a nanowire coupled across two electrodes. The two electrodes are electrically connected to an amplifier. The two electrodes generally have a separation of about five micrometers to about thirty micrometers across which the nanowire is coupled. A focusing element is disposed to admit photons that fall on the focusing element onto the nanowire to heat it. A voltage change across the nanowire caused by the heating of the nanowire by the light is detected by the amplifier. The voltage change corresponds to the energy absorbed from the light by the nanowire. The color of a single photon can be detected using such device. An array of such devices can be used for sensing light on a two-dimensional scale, thereby providing an image showing small variances in the energies of the light impinging upon the detector array.

SENSOR

The invention relates to a sensor (30) for recording electromagnetic radiation, comprising a sensor element (10), a housing (31, 33), in which said sensor element is arranged and a radiation inlet window (35) in the housing, sealed by a material (32), transparent to the radiation for recording. The transparent material (32) is fixed to the housing by means of a fixing device (38), not in the field of view of the sensor element.

INFRARED DETECTOR ARRAY AND PRODUCTION METHOD THEREFOR

An infrared detector array wherein infrared detectors are arranged in a high density and each detector has a low thermal capacity. An insulating film (2) is disposed on the surface of a silicon substrate having a (100)-plane as its upper surface, and right-angled triangle portions at four corners of matrix-like right-angled quadrilaterals encompassed by two parallel straight lines portions of two sets crossing orthogonally each other on the insulating film (2) are etched to form openings. The silicon substrate is anisotropically etched through the openings in such a manner as to form pyramidal cavities (3) in the silicon substrate below the insulating film (2). The infrared detectors are then disposed on the insulating film.

Infrared imaging apparatus

A representative embodiment of the invention provides an infrared (IR) imaging system adapted to (i) convert an IR image of an object into mechanical displacements of a plurality of movable plates, (ii) use the mechanical displacements to impart a corresponding spatial phase modulation pattern onto a beam of visible light, and (iii) apply spatial filtering to convert the spatial phase modulation pattern into a visible image of the object.

懸架式ボロメータマイクロプレートに基づく赤外線検出器

ЭЛЕКТРОННОЕ УСТРОЙСТВО

... 1. Электронное устройство, содержащее:термоэлектрический преобразователь, содержащий полупроводниковый слой, осуществляющий термоэлектрическое преобразование с использованием эффекта Зеебека, ипо меньшей мере, либо фотоэлектрический преобразователь, в котором, по крайней мере, часть полупроводникового слоя выполняет фотоэлектрическое преобразование, либо транзистор или диод, имеющий, по крайней мере, часть полупроводникового слоя выполняющего функции рабочего слоя,причем полупроводниковый слой имеет ширину запрещенной зоны, соответствующую ультрафиолетовому (УФ) излучению,термоэлектрический преобразователь имеет поглощающую часть, абсорбирующую инфракрасное (ИК) излучение, и преобразующую его в тепло, и, по крайней мере, часть полупроводникового слоя фотоэлектрического преобразователя обеспечивает фотоэлектрическое преобразование УФ излучения.2. Электронное устройство, содержащее:термоэлектрический преобразователь, содержащий полупроводниковый слой, осуществляющий термоэлектрическое преобразование ...

ДЕТЕКТОР ЭЛЕКТРОМАГНИТНОГО ИЗЛУЧЕНИЯ С МИКРОИНКАПСУЛЯЦИЕЙ И УСТРОЙСТВО ДЛЯ ОБНАРУЖЕНИЯ ЭЛЕКТРОМАГНИТНЫХ ИЗЛУЧЕНИЙ, ИСПОЛЬЗУЮЩЕЕ ТАКИЕ ДЕТЕКТОРЫ

Изобретение относится к области оптического приборостроения и касается детектора электромагнитного излучения. Детектор содержит множество микроучастков, каждый из которых включает в себя чувствительную к излучению мембрану. Каждый микроучасток размещен в микрополости, образованной подложкой, используемой в качестве прозрачного окна верхней стенкой и боковыми стенками, прикрепленными к подложке и верхней стенке. Мембрана подвешена над подложкой посредством опорных рычагов, которые включают в себя электропроводящий слой. Концы опорных рычагов закреплены в боковых стенках. Подложка и боковые стенки выполнены из последовательных слоев, которые сформированы непосредственно один над другим путем осаждения. Технический результат заключается в повышении пространственного разрешения и чувствительности устройства. 2 н. и 30 з.п. ф-лы, 20 ил.

УСТРОЙСТВО С МЕМБРАННОЙ КОНСТРУКЦИЕЙ ДЛЯ ОБНАРУЖЕНИЯ ТЕПЛОВОГО ИЗЛУЧЕНИЯ, СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ И ИСПОЛЬЗОВАНИЯ

1. Устройство (1) обнаружения теплового излучения, содержащее: ! - по меньшей мере одну мембрану (11), на которой расположен по меньшей мере один датчик (111) тепла для преобразования теплового излучения в электрический сигнал; ! - по меньшей мере одну подложку (12) контура, несущую мембрану, и по меньшей мере один считывающий контур (121) для считывания электрического сигнала, ! и при этом датчик электрически связан через мембрану со считывающим контуром посредством сквозного контакта (120). ! 2. Устройство по п.1, отличающееся тем, что подложка контура и мембрана расположены относительно друг друга так, что между ними имеется по меньшей мере одна полость (15), ограниченная подложкой контура и мембраной. ! 3. Устройство по любому из пп.1 и 2, отличающееся тем, что: ! - предусмотрена по меньшей мере одна крышка для закрытия датчика; ! - подложка контура, мембрана и крышка уложены в стопу так, что мембрана находится между подложкой контура и крышкой. ! 4. Устройство по п.3, отличающееся тем, что мембрана и крышка расположены друг относительно друга так, что между ними имеется по меньшей мере одна полость (14). ! 5. Устройство по п.2, отличающееся тем, что полости, со стороны контура и/или крышки, вакуумированы или выполнены с возможностью их вакуумирования. ! 6. Устройство по любому из пп.4 и 5, отличающееся тем, что полости со стороны крышки и со стороны контура соединены между собой отверстием (114) в мембране. ! 7. Устройство по п.4 или 5, отличающееся тем, что для прохода теплового излучения к датчику в мембране, подложке контура и/или крышке имеется по меньшей мере одно окно (17) для прохода излучения с высокой прозрачностью для теплового излучения. ! 8. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2009 144 001 (13) A (51) МПК G01J 5/04 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2009144001/28, 28.05.2008 (71) Заявитель(и): ПАЙРИОС ЛТД. (GB) Приоритет(ы): (30) Конвенционный приоритет ...

STRAHLUNGSDETEKTOR UND VERFAHREN ZUR HERSTELLUNG EINES STRAHLUNGSDETEKTORS

Es wird ein Strahlungsdetektor mit einem Substrat und einer Membran, die über Abstandshalter oberhalb des Substrats aufgehängt ist beschrieben, wobei die Abstandshalter einen in der Membran gebildeten Strahlungssensor elektrisch kontaktieren sowie die Membran gegenüber dem Substrat thermisch isolieren.

Elektronische Erfassungsvorrichtung und diese Vorrichtung umfassender Sensor

Mikroelektromechanische Vorrichtung

Die Erfindung betrifft eine mikroelektromechanische Vorrichtung mit: einem an einer Substratoberseite (101a) eines Substrats (101) und/oder einem an einer Substratrückseite (101b) des Substrats (101) angeordneten Magneten (102, 202); einem im Substrat (101) integrierten Mikrowellensender (503); einem im Substrat (101) integrierten Mikrowellenempfänger (506); und einem von dem Substrat beabstandeten Absorberniveau (203) mit einer dem Substrat (101) zugewandten paramagnetischen Schicht (201) und einer vom Substrat (101) abgewandten Infrarot-Absorberschicht (107).

Infrarotsensor.

Nonlinear optical surface sensing with a single thermo-electric detector

A system and method are disclosed for nonlinear optical surface sensing with a single thermo-electric detector. In particular, the system includes at least two signal sources 205, 215 that are co-aligned to propagate photons 209, 219 to the same location on a surface 225. At least one focusing element 242 focuses a sequence of photons 235 that is reflected from the location on the surface and at least one frequency selective electromagnetic detector 160 detects the sequence of photons. When the frequency selective electromagnetic detector senses a photon, it emits an electrical pulse 255, 256, 257 having a voltage proportional to the energy level of the photon. A processor 260 processes the electrical pulses, and de-multiplexes the sequence of emitted electrical pulses based on the electrical pulse voltage of the electrical pulses. The frequency selective detector may include a nanowire array having Bismuth Tellurium thermoelectric junction thermocouples.

Design and fabrication method for microsensor

Infrared thermal sensor with good SNR

WIDE INFRARED PIXEL WITH SMALL MASS AND CUSTOM-MADE CROSS SECTION

DETECTOR DEVICE WITH OPTICAL FUNCTION AND THEIR MANUFACTURING PROCESSES

ELECTRONIC COLLECTION DEVICE AND THIS DEVICE COMPREHENSIVE SENSOR

MANUFACTURING PROCESS OF A BOLOMETRI DETECTOR

Has a high filling level of the thermopile infrared sensor structure

具有高填充水平的热电堆红外线传感器结构。填充有介质(15)的外壳中的具有高填充水平的热电堆红外线传感器结构由承载基板(11)构成，所述承载基板(11)具有至外部的电连接件(28,28’)并且用光学组件(13)进行密封，其中，对所述外壳中的所述承载基板(11)施加传感器芯片(14)，所述芯片具有多个热电传感器元件结构(16)，所述多个热电传感器元件结构(16)的所谓的“热接触件”(10)位于跨过具有良好导热性的硅承载体(24)中的各个腔体(9)伸展的单独的薄膜(3)上，其中，“冷接触件”(25)位于所述硅承载体(24)上或者所述硅承载体(24)的附近。

Micromechanical device for infrared sensing

A micromechanical device includes an improved sensing element and an improved bending elements are described. Sensing elements include multi-layered structures which are thinner, lighter, and flatter than structures presently known within the related arts. Bending elements include structures which separately respond to illumination by an infrared source so as to twist a sensing element. Micromechanical pixels may be arranged to form two-dimensional arrays of infrared sensitive pixels. Arrays of micromechanical pixels are applicable to imaging devices for use within the fields of security and surveillance, firefighting, automotive safety, and industrial monitoring.

DEVICE OF DETECTION OF INFRA-RED RADIATIONS HAS DETECTING BOLOMETRIQUES

ELECTROMAGNETIC DETECTOR OF RADIATION HAS CONNECTION BY NANOFIL AND METHOD FOR REALIZATION

THERMAL DETECTOR OF ELECTROMAGNETIC RADIATIONS HAS ELEMENTS Of INSULATION DIRECT AND DEVICE OF DETECTION IMPLEMENTING OF SUCH DETECTORS

BOLOMETER HAS FREQUENTIAL DETECTION

Bolomètre (2) comportant au moins un microsystème ou nanosystème électromécanique, ledit microsystème ou nanosystème comportant un support (8) et une masse mobile (4) suspendue par des poutres (6) au dessus du support (8), ladite masse mobile formant un absorbeur d'un flux optique (F), des électrodes d actionnement (12) destinées à mettre en vibration la masse mobile (4) et disposées latéralement par rapport à la masse mobile et des électrodes de détection (14) de la variation de la fréquence de vibration de ladite masse mobile (4) disposées latéralement par rapport à la mase mobile (4). Bolometer (2) comprising at least one microsystem or electromechanical nanosystem, said microsystem or nanosystem comprising a support (8) and a mobile mass (4) suspended by beams (6) above the support (8), said mobile mass forming a absorber of an optical flux (F), actuation electrodes (12) for vibrating the moving mass (4) and arranged laterally with respect to the moving mass and detection electrodes (14) of the variation of the vibration frequency of said mobile mass (4) arranged laterally with respect to the mobile mase (4).

ELECTRONIC DEVICE OF DETECTION AND DETECTOR INCLUDING/UNDERSTANDING SUCH A DEVICE

MICROBOLOMETRES RESISTANT TO THE TEMPERATURES OF HIGH SCENES.

La présente invention concerne un microbolomètre comportant une partie suspendue (2) contenant un élément sensible aux rayonnements et constituée d'un ensemble de premières zones (2A) et d'un ensemble de secondes zones (2B), les deux ensembles étant superposés; de plus, les matériaux constituant lesdites zones (2A) et (2B) possèdent des coefficients de dilatation thermique suffisamment différents pour que ladite partie suspendue (2) se déforme sous l'effet d'une élévation de température au point de venir au contact du substrat (1) lorsque la zone de contact atteint une température Tc inférieure à la température de destruction Td du microbolomètre. Application à des détecteurs de rayonnement comprenant un ensemble de tels microbolomètres, et à divers appareils comprenant au moins un tel détecteur de rayonnement.

THERMOELECTRIC DEVICE

L'invention concerne une cellule thermoélectrique à pistes thermoélectriques (52A, 52B, 53A, 53B) de types alternés reliées en série par des liaisons métalliques (54A, 54B), comprenant une plateforme (42) suspendue au-dessus d'un support par des bras (44A, 44B, 45A, 45B), la plateforme et les bras étant des parties d'une même couche isolante thermiquement et électriquement , et chaque bras portant une piste thermoélectrique.

Thermal infrared detector and infrared image sensor using the same

The present invention provides a thermal infrared detector whose sensitivity will not decrease even if the frame rate is increased, and will not result in the thermal damage caused by the heat generated by itself; and an infrared image sensor using the same. The heat-sensing infrared camera device of the present invention has an infrared absorption layer 42; and a detection part X(i, j) of heat-electricity conversion part 41 to convert the heat generated by the infrared absorption layer 42 into electrical signal, as the main part of the pixel. Plural detection parts X(i, j) are thermally insulated, and arranged on the base body (1, 2, 4). Mechanical switching devices M(i, j) are disposed between the supporting base body (1, 2, 4) and plural detection parts X(i, j) respectively. During the blanking time else than the time to read the electrical signal of the detection part X(i, j), the detection part X(i, j) is thermally short-circuited to the base body (1, 2, 4), so that the heat stored ...

OPTICALLY TRANSITIONING THERMAL DETECTOR STRUCTURES

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.

INFRARED DETECTION DEVICE

An infrared detection device comprises a substrate and a thermal photodetection element. The substrate comprises a recessed portion, and a frame portion located around the recessed portion. The thermal photodetection element comprises a leg portion and a detection portion, and the leg portion is connected onto the frame portion such that the detection portion is located on the recessed portion. Further, the thermal photodetection element comprises an intermediate layer provided on the substrate, a first electrode layer provided on the intermediate layer, a detection layer provided on the first electrode layer, and a second electrode layer provided on the detection layer. The linear thermal expansion coefficient of the substrate is larger than the linear thermal expansion coefficient of the detection layer, and the linear thermal expansion coefficient of the intermediate layer becomes smaller from the substrate toward the first electrode layer.

Infrared sensor and infrared detector

A chip-shaped infrared sensor comprising a substrate formed with a cavity, an infrared radiation receiving portion supported in the form of a micro air bridge in the cavity by four hook-shaped beam portions extending from the substrate, two thermistor films for infrared radiation detection formed on the infrared radiation receiving portion, two thermistor films for temperature compensation arranged on the substrate, and a single thermistor film arranged on the substrate for detecting temperature of the substrate.

Thermal isolation using vertical structures

This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

Large area low mass IR pixel having tailored cross section

The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously available. These faster speeds are achieved by reducing the thermal mass of the pixel itself, thus directly affecting the pixels associated thermal time constant. Thermal mass is reduced by tailoring the cross section of the pixel structure such that protective layers are substantially reduced in areas where they are not necessary. This results in the desired reduction and overall pixel mass and consequently more optimum pixel performance.

Infrared detector and infrared solid-state imaging device

An infrared detector includes a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junction diode is composed of the P-type first region and an N-type first region formed in the P-type first region at a position separated from the N-type second region, and the second PN junction diode is composed of the N-type second region and a P-type second region formed in the N-type second region at a position separated from the P-type first region, and wherein the first PN junction diode and the second PN junction diode are connected by a metal film formed on a surface of a concave portion spreading both of the P-type first region and the N-type second region.

Thermal imaging system with a monolithic focal plane array and method

A thermal imaging system (10) contains a focal plane array (30) including a plurality of thermal sensors (32) mounted on a substrate (62). Each thermal sensor (32) includes a film layer (34) of infrared sensitive material which is both electronically and thermally isolated from the associated integrated circuit substrate (62). An image may be formed on the film layer (34) in response to infrared radiation from a scene (12). Electromagnetic radiation (22) from a source (visible light or near infrared) (20) is used to reproduce or transfer the image from the thermal sensors (32) onto the first surface (68) of the substrate (62). A thermoelectric cooler/heater (66) may be provided to optimally adjust the temperature of the substrate (62) to improve overall image quality.

MICROBOLOMETER DETECTOR WITH CENTRALLY-LOCATED SUPPORT STRUCTURE

A microbolometer detector has an improved support structure. The microbolometer detector includes a substrate and a support structure including at least one post connected to and projecting substantially vertically from the substrate. The microbolometer detector also includes a platform held above the substrate and including a central region substantially vertically aligned with the at least one post of the support structure and a peripheral region surrounding the central region, the platform being supported by the support structure from the central region thereof. The microbolometer further includes at least one thermistor located in the peripheral region of the platform. A microbolometer focal plane array may also include multiple microbolometer detectors arranged in a two-dimensional array. The support structures are particularly well suited for supporting relatively large platforms of microbolometer detectors, particularly for far-infrared and terahertz detection and spectroscopy applications ...

Tunable finesse infrared cavity thermal detectors

A cavity thermal detector assembly is presented that allows both tunable narrowband and broadband operation. This allows for high light efficiency, low thermal time constant, and flexibility in designing the optical path. The thermal detector/filter layers are part of the top mirror or mirrors of a Gires-Tournois-type optical cavity and provide absorption and reflection that can be adjusted to the desired width and position of the detected band. Tuning, if desired, can be achieved by applying micromechanical methods. Broadband operation may be achieved by bringing the sensor close to the bottom mirror. In this mode, the sensor or its supports may or may not touch over a small area.

INFRARED SENSOR WITH CARBON NANOTUBES

Bolometric detector with thermal isolation by constriction

METHOD FOR DETERMINING A TEMPERATURE WITHOUT CONTACT, AND INFRARED MEASURING SYSTEM

METHOD OF MANUFACTURING POROUS STRUCTURE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a porous structure that prevents a semiconductor substrate and a protecting film from being peeled off by a chemical solution used for anodization. SOLUTION: The method of manufacturing the porous structure includes the steps of: forming an oxide film 14 on a semiconductor substrate 10 on which a diffusion layer 12 is formed; providing a plurality of connecting holes at predetermined positions on the oxide film 14, forming wirings 22 in the connecting holes, and then providing such an opening 24 as to expose a surface of the diffusion layer 12 in an area held between the wirings 22; forming a groove 26 at an outer edge of the opening 24 and depositing a protecting layer 28 on an overall surface, whereon the diffusion layer 12 is formed, of the semiconductor surface 10 so as to bury the groove 26; removing the protecting film 28 of the opening 24 so as to leave the protecting layer 28 at the outer edge of the opening 24, and exposing ...

ЭЛЕКТРОННОЕ УСТРОЙСТВО

FIELD: physics. SUBSTANCE: invention relates to electronic engineering. Proposed device comprises thermoelectric transducer (100) with heterostructure semiconductor plies (38) to perform thermoelectric conversion and photoelectric transducer (102). At least one part of heterostructure semiconductor ply (38) of transducer (102) performs photoelectric conversion. In includes transistor (104) and/or diode comprising at least a part of heterostructure semiconductor plies acting as working layer. EFFECT: combination of solid-state IC with thermoelectric transducer and transistor and/or diode to prevent interferences between p- and n-type elements. 15 cl, 11 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК H01L 27/16 (13) 2 515 214 C2 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2012108191/28, 05.08.2010 (24) Дата начала отсчета срока действия патента: 05.08.2010 (72) Автор(ы): АБЭ Масаюки (JP) (73) Патентообладатель(и): АЙВЬЮТЕК КО., ЛТД (KR), 3Д-БИО КО., ЛТД (JP) Приоритет(ы): (30) Конвенционный приоритет: R U 11.08.2009 JP 2009-186884 (43) Дата публикации заявки: 20.09.2013 Бюл. № 26 (45) Опубликовано: 10.05.2014 Бюл. № 13 2 5 1 5 2 1 4 (56) Список документов, цитированных в отчете о поиске: US 4710588, 01.12.1987. EP 1246251 А2, 02.10.2002. DE 3311436 A1, 04.10.1984. UZ 3364 С, 31.05.2007. US 20060225782 A1, 12.10.2006. JP 2003179230 A, 27.06.2003. WO 2008132445 A2, 06.11.2008. SU 173341 A1, 21.07.1965 (86) Заявка PCT: C 2 C 2 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 11.03.2012 KR 2010/005150 (05.08.2010) (87) Публикация заявки PCT: R U 2 5 1 5 2 1 4 WO 2011/019163 (17.02.2011) Адрес для переписки: 191002, Санкт-Петербург, а/я 5, ООО "Ляпунов и партнеры" (54) ЭЛЕКТРОННОЕ УСТРОЙСТВО (57) Реферат: Изобретение относится к электронной технике. Сущность: электронное устройство содержит термоэлектрический преобразователь (100) с гетероструктурными полупроводниковыми слоями (38), ...

ДЕТЕКТОР ЭЛЕКТРОМАГНИТНОГО ИЗЛУЧЕНИЯ С МИКРОИНКАПСУЛЯЦИЕЙ И УСТРОЙСТВО ДЛЯ ОБНАРУЖЕНИЯ ЭЛЕКТРОМАГНИТНЫХ ИЗЛУЧЕНИЙ, ИСПОЛЬЗУЮЩЕЕ ТАКИЕ ДЕТЕКТОРЫ

... 1. Детектор электромагнитного излучения, предназначенный для функционирования на длине волны лр, находящейся в пределах спектрального диапазона, представляющего интерес, то есть между ли л, содержащий множество микроучастков, каждый из которых включает в себя мембрану (2), чувствительную к излучению, по меньшей мере, в спектральном диапазоне, представляющем интерес, и каждый микроучасток размещен в микрополости, образованной подложкой (1), верхней стенкой (5), используемой в качестве окна, прозрачного для излучения в спектральном диапазоне, представляющем интерес, по меньшей мере, для некоторых микроучастков из указанного множества, и боковыми стенками (4), прикрепленными к подложке и верхней стенке, причем мембрана (2) подвешена над подложкой (1) посредством, по меньшей мере, двух опорных кронштейнов (6), которые включают в себя электропроводящий слой (17), каждый из указанных опорных кронштейнов содержит конец, механически прикрепленный к подложке,отличающийся тем, чтоконцы упомянутых ...

ТЕРМОЭЛЕКТРИЧЕСКОЕ УСТРОЙСТВО

РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2018 132 856 A (51) МПК H01L 35/32 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2018132856, 13.02.2017 (71) Заявитель(и): САНТР НАСЬОНАЛЬ ДЕ ЛЯ РЕШЕРШ СЬЯНТИФИК (FR) Приоритет(ы): (30) Конвенционный приоритет: 18.02.2016 FR 1651336 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 18.09.2018 R U (43) Дата публикации заявки: 18.03.2020 Бюл. № 8 (72) Автор(ы): БУРЖУА, Оливье (FR), ТАЙНОФФ, Димитри (FR), БУРГО, Даниель (FR) (86) Заявка PCT: (87) Публикация заявки PCT: WO 2017/140975 (24.08.2017) A Адрес для переписки: 129090, Москва, ул. Б. Спасская, 25, стр. 3, ООО "Юридическая фирма Городисский и Партнеры" R U (57) Формула изобретения 1. Термоэлектрический элемент с термоэлектрическими дорожками (52А, 52B, 53А, 53B) чередующихся типов, соединенными последовательно с помощью металлических соединений (54А, 54B), содержащий платформу (42), подвешенную над подложкой с помощью ножек (44А, 44B, 45А, 45B), причем платформа и ножки являются частями одного и того же тепло- и электроизоляционного слоя (50), и каждая ножка поддерживает термоэлектрическую дорожку, при этом платформа (42) имеет форму прямоугольника, две ножки (44А, 44B) проходят от одной стороны прямоугольника, и две ножки (45А, 45B) проходят от противоположной стороны, термоэлектрические дорожки (52А, 52B, 53А, 53B) одного и того же типа размещены на ножках, расположенных на одной и той же стороне прямоугольника. 2. Термоэлектрический элемент по п.1, в котором термоэлектрические дорожки (52А и 53А, 52B и 53B) выполнены из легированного теллурида висмута, при этом упомянутые типы соответствуют типам проводимости. 3. Термоэлектрический элемент по п.1 или 2, в котором изоляционный слой (50) выполнен из оксида кремния, нитрида кремния или оксида алюминия. 4. Термоэлектрический элемент по любому из пп.1-3, в котором соотношение между длиной и шириной каждой ножки (44А, 44B, 45А, 45B) больше 5. 5. ...

Mikroelektronische Anordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Anordnung

Die Erfindung schafft eine mikroelektronische Anordnung (100) zum Detektieren von elektromagnetischen Wellen. Die mikroelektronische Anordnung (100) umfasst ein Sensorsubstrat (10) mit einer Montagefläche (11) und zumindest einem Detektionsbereich (15) und zumindest einem Linsensubstrat, das auf der Montagefläche (11) angeordnet ist. Das zumindest eine Linsensubstrat weist zumindest ein Kavität (K1) auf und die zumindest eine Kavität (K1) umschließt den zumindest einen Detektionsbereich (15) auf Substratlevel hermetisch.

Verfahren zum Herstellen eines Mikrosystems mit Pixel

Ein Verfahren zum Herstellen eines Mikrosystems (1) mit Pixel, weisend die Schritte auf: Bereitstellen eines Siliziumwafers; Herstellen einer thermischen Siliziumoxidschicht an der Oberfläche des Siliziumwafers als eine Basisschicht (5) mit einer Dicke zwischen 200 nm und 1000 nm durch Oxidation des Siliziumwafers; Herstellen einer Siliziumoxiddünnschicht unmittelbar auf der Basisschicht (5) als eine Trägerschicht (6) mit einer Dicke von 100 nm bis 700 nm durch ein thermisches Abscheideverfahren; Herstellen einer Platinschicht unmittelbar auf der Trägerschicht (6) mit einem thermischen Abscheideverfahren mit einer Dicke von 40 nm bis 200 nm, wodurch ein Zwischenprodukt aufweisend den Siliziumwafer, die Basisschicht (5), die Trägerschicht (6) und die Platinschicht hergestellt wird; Abkühlen des Zwischenprodukts auf Raumtemperatur; pixelartige Strukturierung der Platinschicht durch Abtragen von überflüssigen Bereichen der Platinschicht, wodurch auf der Trägerschicht (5) von den verbleibenden ...

Frequency selective imaging system with pixels formed from thermoelectric nanowires

A frequency selective imager 160 includes an array of pixels arranged in a focal plane array. Each pixel 250 includes at least one nanoparticle-sized diameter thermoelectric junction (130, 135, Fig. 1) that is formed between nanowires of different compositions. When a thermoelectric junction senses a photon, the thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. The frequency selective imager may be a frequency selective optical imager that is used to sense photons having optical frequencies. At least one of the nanowires in the frequency selective imager may be manufactured from a compound material including Bismuth (Bi) and Tellurium (Te). A frequency selective imaging system 200 further comprises at least one intensity control device 225, at least one polarization control device 230 and at least one focusing element 235. A processor 260 generates a multi-spectral image from information from the electrical pulses.

Infrared thermal sensor with good SNR

An infrared thermal sensor 10 for detecting infrared radiation comprises a substrate (1, Fig. 2) and a cap structure (2, Fig. 2) together forming a sealed cavity 3. The cavity comprises a gas at a predefined pressure; a membrane or diaphragm arranged in said cavity 3 for receiving infrared radiation (IR); a plurality of beams or webs 5a, 5b for suspending the membrane 4; and a plurality of thermocouples (6, Fig. 2) for measuring a temperature difference (ΔT) between the membrane and the substrate. The ratio of the thermal resistance (RT1) between the membrane and the substrate through the thermocouples, and the thermal resistance (RT2) between the membrane and the substrate through the beams and through the gas is a value in the range of 0.8 to 1.2. The beams may be arranged such that part of the beams is substantially surrounded by the membrane 4 (Figs 18-20). The infrared thermal sensor has a good performance in terms of signal to noise (SNR).

Pixel-level optical elements for uncooled infrared detector devices

Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.

Infrared thermal sensor with beam without thermocouple

Nonlinear optical surface sensing witha single thermo-electric detector

HEAT DETECTOR FOR ELECTROMAGNETIC RADIATION WITH ALIGNED ISOLATION ELEMENTS AND COLLECTION DEVICE TO INGANGSETZUNG SUCH DETECTORS

Frequency selective imaging system

An apparatus, system, and method are disclosed for a frequency selective imager. In particular, the frequency selective imager includes an array of pixels arranged in a focal plane array. Each pixel includes at least one nanoparticle-sized diameter thermoelectric junction that is formed between nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective imager is a frequency selective optical imager that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the frequency selective imager is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).

Pyroelectric detector, pyroelectric detection device, and electronic instrument

A pyroelectric detector includes a substrate, a support member and a pyroelectric detection element, which includes a capacitor, first and second reducing gas barrier layers, an insulating layer, a plug and a second electrode wiring layer. The first reducing gas barrier layer covers at least a second electrode and a pyroelectric body of the capacitor, and has a first opening that overlaps the second electrode in plan view. The insulating layer covers at least the first reducing gas barrier layer, and has a second opening that overlaps the first opening in plan view. The plug is disposed in the first and second openings and connected to the second electrode. The second electrode wiring layer is formed on the insulating layer and connected to the plug. The second reducing gas barrier layer is formed on the insulating layer and the second electrode wiring layer and covers at least the plug.

Infrared ray detection element and infrared ray detection device having the same

An infrared ray detection element has a plurality of pyroelectric layers that are laminated in a same direction as an incident direction of infrared rays, one or more intermediate electrode layers laminated between the plurality of pyroelectric layers; a front side electrode layer that is laminated on a front side of the pyroelectric layer positioned at a top side; and a back side electrode layer that is laminated on a back side of the pyroelectric layer positioned at a bottom side. The two pyroelectric layers adjacent in a front and back direction are performed with a polarization process such that polarization directions thereof are set to reverse directions to each other.

Frequency selective electromagnetic detector

An apparatus, system, and method are disclosed for a frequency selective electromagnetic detector. In particular, the frequency selective electromagnetic detector includes a nanowire array constructed from a plurality of nanowires of different compositions. At least one nanoparticle-sized diameter thermoelectric junction is formed between the nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective electromagnetic detector is a frequency selective optical detector that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the nanowire array is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).

Thermal Sensor Having a Coupling Layer, and a Thermal Imaging System Including the Same

A thermal sensor includes a first semi-transparent electrode; a second electrode; a thermally sensitive element positioned between the first and second electrodes; and a coupling layer positioned between the first electrode and the thermally sensitive element, wherein the thermally sensitive element is in electrical communication with the first electrode via the coupling layer and is in electrical communication with the second electrode. An optional second coupling layer may be positioned between the second electrode and the thermally sensitive element, wherein the thermally sensitive element is in electrical communication with the second electrode via the second coupling layer.

Method for measuring light intensity distribution

A method for measuring intensity distribution of light includes a step of providing a carbon nanotube array having a top surface. The carbon nanotube array is located in an inert gas environment or a vacuum environment. A light source irradiates the top surface of the carbon nanotube array, to make the carbon nanotube array radiate a radiation light. An imaging element images the radiation light, to obtain an intensity distribution of the light source.

Serpentine ir sensor

In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror.

INFRARED THERMAL SENSOR WITH BEAM WITHOUT THERMOCOUPLE

An infrared thermal sensor for sensing infrared radiation is disclosed. The infrared thermal sensor comprises a substrate and a cap structure together forming a sealed cavity, a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture and a plurality of beams for suspending the membrane. At least one beam has a thermocouple arranged therein or thereon for measuring a temperature difference (ΔT) between the membrane and the substrate, the plurality of beams. Furthermore at least one beam is mechanically supporting the membrane without a thermocouple being present therein or thereon. 114-. (canceled)15. An infrared thermal sensor for sensing infrared radiation , the infrared thermal sensor comprisinga substrate and a cap structure together forming a sealed cavity;a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture;a plurality of beams configured for suspending the membrane comprising at least one beam having a thermocouple arranged therein or thereon for measuring a temperature difference (ΔT) between the membrane and the substrate, the plurality of beams furthermore comprising at least one beam mechanically supporting the membrane without a thermocouple being present therein or thereon.16. The infrared thermal sensor according to claim 15 , wherein the filling factor of the membrane in the cavity is less than 50%.17. The infrared thermal sensor according to claim 15 , wherein the pressure in the cavity is less than 10 Pa claim 15 , advantageously between 1 Pa and 0.1 Pa.18. The infrared thermal sensor according to claim 15 , wherein the beams in the plurality of beams are selected so that a ratio of the thermal resistance between the membrane and the substrate via radiation and convection and conduction through the gas medium in the cavity and through the part of the beam other than through the thermocouples claim 15 , and the combined thermal resistance between the membrane ...

Recessed carbon nanotube article and method for making same

A recessed carbon nanotube article includes a base; a substrate disposed on the base; wells disposed in the substrate and bounded by the base and a substrate wall; and a carbon nanotube element disposed in individual wells and including vertically aligned carbon nanotubes such that a longitudinal length of the vertically aligned carbon nanotubes is less than a depth of the well in which the carbon nanotube element is disposed. A recessed carbon nanotube bolometer includes a base; a substrate on the base; radiation wells in the substrate; carbon nanotubes in the wells; thermistors and heaters on the membrane arranged as an electrical substitution member. A process for making a recessed carbon nanotube bolometer includes forming a substrate on a base; forming a radiation well in the substrate; forming carbon nanotubes in the well; disposing a cover on the wells; and forming a thermistor and a heater on the base.

Fabry-perot interference filter and light-detecting device

A Fabry-Perot interference filter includes: a substrate having a first surface and a second surface facing each other; a first layer structure disposed on the first surface; and a second layer structure disposed on the second surface, wherein the first layer structure is provided with a first mirror portion and a second mirror portion facing each other with an air gap therebetween, and a distance between the first mirror portion and the second mirror portion is varied, and the second layer structure is formed with a separation region separating at least a part of the second layer structure into one side and another side in a direction along the second surface.

BOLOMETER AND METHOD FOR MANUFACTURING SAME

An example objective of the present invention is to provide a bolometer capable of reducing its manufacturing cost. A bolometer according to an example aspect of the present invention includes: a substrate; a heat insulating layer formed on the substrate; and a bolometer film formed on the heat insulating layer; wherein the bolometer film is a carbon nanotube film including semiconducting carbon nanotubes in an amount of 67% by mass or more of the total amount of carbon nanotubes, and the thickness of the carbon nanotube film is in the range of 10 nm to 1 μm, and the density of the carbon nanotube film is 0.3 g/cmor more. 1. A bolometer comprising:a substrate;a heat insulating layer formed on the substrate; anda bolometer film formed on the heat insulating layer; whereinthe bolometer film is a carbon nanotube film comprising semiconducting carbon nanotubes in an amount of 67% by mass or more of the total amount of carbon nanotubes, and{'sup': '3', 'the thickness of the carbon nanotube film is in the range of 10 nm to 1 μm, and the density of the carbon nanotube film is 0.3 g/cmor more.'}2. The bolometer according to claim 1 , comprising no light reflection layer.3. The bolometer according to claim 1 , wherein 60% or more of the carbon nanotubes contained in the carbon nanotube film have a diameter within the range of 0.6 to 1.5 nm and a length within the range of 100 nm to 5 μm.4. The bolometer according to claim 1 , wherein the carbon nanotube film comprises the semiconducting carbon nanotubes in an amount of 90% by mass or more of the total amount of carbon nanotubes.5. The bolometer according to claim 1 , wherein the heat conductivity of the heat insulating layer is in the range of 0.02 to 0.3 W/mK.6. The bolometer according to claim 1 , wherein the heat insulating layer is a parylene film.7. The bolometer according to claim 1 , further comprising a protection layer.8. The bolometer according to claim 1 , comprising no light absorbing layer.9. The bolometer ...

THERMOPILE INFRARED SENSOR STRUCTURE WITH A HIGH FILLING LEVEL

Thermopile infrared sensor structure with a high filling level in a housing filled with a medium (), consisting of a carrier substrate () which has electrical connections (′) to the outside and is closed with an optical assembly (), wherein a sensor chip () is applied to the carrier substrate () in the housing, which chip has a plurality of thermoelectric sensor element structures (), the so-called “hot contacts” () of which are located on individual diaphragms () which are stretched across a respective cavity () in a silicon carrying body () with good thermal conductivity, wherein the “cold contacts” () are located on or in the vicinity of the silicon carrying body (). The problem addressed by the invention is that of specifying a thermopile infrared array sensor (sensor cell) which, with a small chip size, has a high thermal resolution and a particularly high filling level. This sensor is preferably intended to be operated in gas with a normal pressure or a reduced pressure and is intended to be able to be mass-produced in a cost-effective manner under ultra-high vacuum without complicated technologies for closing the housing. This is achieved by virtue of the fact that a radiation collector structure () is located above each individual diaphragm () of the sensor element structures () which spans a cavity (). 1. A thermopile infrared sensor structure with a high filling level in a housing filled with a medium , consisting of a baseplate , which has electrical connections to the outside and which is closed with an optical assembly , and wherein a sensor chip is applied on the baseplate in the housing , said chip carrying a plurality of thermoelectric sensor element structures , the so-called “hot contacts” of which are situated on individual membranes stretched across a respective cavity in a silicon carrying body having good thermal conductivity , wherein the “cold contacts” are situated on or in the vicinity of the silicon carrying body , characterized in that a ...

Passive detectors for imaging systems

Passive detector structures for imaging systems are provided, which are based on a coefficient of thermal expansion (CTE) framework. With such framework, a CTE-based passive detector structure includes a detector member that is configured to expand or contract in response to thermal heating resulting from photon exposure. The expanding/contracting CTE detector structure is configured to exert mechanical forces on resistor and/or capacitor circuit elements, which are part of an oscillator circuit, to vary the resistance and capacitance of such circuit elements and change a frequency or period of oscillation of an output signal of the oscillator circuit. The change in the frequency or period of oscillation of the output signal of the oscillator circuit is utilized to determine an amount of photon exposure of the CTE-based detector.

METHOD FOR MAKING BLACKBODY RADIATION SOURCE

A method for making blackbody radiation source is provided. A blackbody radiation cavity and a carbon nanotube array located on a substrate are provided. A black lacquer layer is coated on an inner surface of the blackbody radiation cavity. A pressure is applied to the carbon nanotube array to form a carbon nanotube paper. The carbon nanotube paper is placed on the black lacquer layer. The substrate is peeled off to make the carbon nanotube paper bond to the black lacquer layer. An adhesive tape is placed on the carbon nanotube paper. And then the adhesive tape peeling off to separate carbon nanotubes in the carbon nanotube paper from the adhesive tape and bond to the black lacquer layer, the carbon nanotubes vertically aligned and forms the carbon nanotube array. 1. A method for making blackbody radiation source comprises:{'b': '11', 'step (S): providing a blackbody radiation cavity comprising an inner surface, a substrate, and a carbon nanotube array located on the substrate, wherein the carbon nanotube array comprises a plurality of carbon nanotubes comprising a root portion directly contacting with the substrate and a top portion away from the substrate;'}{'b': '12', 'step (S): coating a black lacquer layer on the inner surface of the blackbody radiation cavity;'}{'b': '13', 'step (S): applying a pressure on a surface of the carbon nanotube array to make the plurality of carbon nanotubes of the carbon nanotube array toppled over on a surface of the substrate and form a carbon nanotube paper comprising the plurality of carbon nanotubes, and the plurality of carbon nanotubes in the carbon nanotube paper being parallel to the surface of the substrate;'}{'b': '14', 'step (S): applying the carbon nanotube paper on the black lacquer layer, to make the carbon nanotube paper located between the substrate and the black lacquer layer;'}{'b': '15', 'step (S): peeling off the substrate to separate the carbon nanotube paper from the substrate and bond to the black lacquer ...

PASSIVE DETECTORS FOR IMAGING SYSTEMS

Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum. 1. A device , comprising:a substrate; a resonator member configured to generate an output signal having a frequency or period of oscillation;', 'an unpowered detector member, wherein the unpowered detector member is configured for photon exposure, wherein the unpowered detector member comprises a material having a thermal coefficient of expansion that causes the unpowered detector member to distort due to said photon exposure, wherein the unpowered detector member is further configured to apply a mechanical force to the resonator member due to said distortion of the unpowered detector member, and cause a change in the frequency or period of oscillation of the output signal generated by the resonator member due to said mechanical force applied to the resonator member; and, 'a photon detector formed on the substrate, wherein the photon detector comprisesdigital circuitry configured to (i) determine the frequency or period of oscillation of the output signal generated by the resonator member as a result of the mechanical force applied to the resonator member by the unpowered detector member, and to (ii) determine an amount of said photon exposure based on the determined frequency or period of oscillation of the output signal generated by the resonator member.2. The device of claim 1 , wherein the photon detector is configured to detect thermal infrared energy having a wavelength in a range of about 2 micrometers to 25 micrometers.3. The device of claim 1 , wherein the photon detector further comprises a first support member claim 1 , wherein the unpowered detector member comprises a ribbon member claim 1 , and wherein the ribbon member is suspended above ...

PASSIVE DETECTORS FOR IMAGING SYSTEMS

Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum. 1. A device , comprising:a substrate; a resonator member configured to generate an output signal having a frequency or period of oscillation;', 'an unpowered detector member, wherein the unpowered detector member is configured for photon exposure, wherein the unpowered detector member comprises a material having a thermal coefficient of expansion that causes the unpowered detector member to distort due to said photon exposure, wherein the unpowered detector member is further configured to apply a mechanical force to the resonator member due to said distortion of the unpowered detector member, and cause a change in the frequency or period of oscillation of the output signal generated by the resonator member due to said mechanical force applied to the resonator member; and, 'a photon detector formed on the substrate, wherein the photon detector comprisesdigital circuitry configured to (i) determine the frequency or period of oscillation of the output signal generated by the resonator member as a result of the mechanical force applied to the resonator member by the unpowered detector member, and to (ii) determine an amount of said photon exposure based on the determined frequency or period of oscillation of the output signal generated by the resonator member.2225. The device of claim 1 , wherein the photon detector is configured to detect thermal infrared energy having a wavelength in a range of about micrometers to micrometers.3. The device of claim 1 , wherein the photon detector further comprises a first support member claim 1 , wherein the unpowered detector member comprises a ribbon member claim 1 , and wherein the ribbon member is suspended above ...

PHONONICALLY-ENHANCED IMAGER (PEI) PIXEL

An imager pixel comprising a micro-platform supported by phononic nanowires, the nanowires providing an extreme-level of thermal isolation from a surrounding substrate. The micro-platform in embodiments comprises thermal sensors sensitive to heat from absorbed incident longwave/shortwave photonic irradiation. In embodiments, the pixel photonic sensing structure comprises both a thermal sensor together with a separate photodiode/phototransistor/photogate for sensing RGB and NIR wavelengths. Some embodiments comprise a micro-platform with an integral Peltier thermoelectric element permitting in situ refrigeration to cryogenic temperatures. 1. A phononically-enhanced imager pixel (PEIP) disposed on an imaging plane , providing sensitivity to one or more wavelength bands of incident radiation within the wavelength range RGB to millimeter wavelength range , the PEIP comprising:a surrounding first substrate having a cavity;a plurality of nanowires, wherein the nanowires are physically coupled to a micro-platform and the surrounding substrate, the nanowires thereby suspending the platform in the cavity, wherein, at least a portion of a photonic sensing structure is disposed in the micro-platform;the photonic sensing structure comprises a semiconductor device providing one or more of an output signal in response to the incident radiation and a photonic absorbing structure disposed in the micro-platform; andone or more of the plurality of nanowires comprise a crystalline semiconductor phononic layer, wherein the said phononic layer comprises resonant or nonresonant phononic structure providing a reduced thermal conductivity between the surrounding substrate and the micro-platform and structural sites physically separated by less than the mean-free-path of heat conducting phonons, and wherein the said phononic structure increases the ratio of electrical conductivity to thermal conductivity within the phononic layer, and wherein the PEIP is structured for operation as a ...

Infrared imaging element, imaging device, and imaging system

An infrared imaging element of an embodiment includes: a first pixel portion including a first cell portion including a first infrared ray detecting portion detecting a first infrared ray and a second infrared ray with a wavelength different from a wavelength of the first infrared ray, and first supporting legs that support the first cell portion, the first supporting legs including a first and second wiring lines that convey an electrical signals obtained by the first infrared ray detecting portion; and a second pixel portion including a second cell portion including a second infrared ray detecting portion detecting the second infrared ray, and second supporting legs that support the second cell portion, the second supporting legs including a third and fourth wiring lines that convey an electrical signal obtained by the second infrared ray detecting portion.

MULTISPECTRAL PLASMONIC THERMAL IMAGING DEVICE

A computer-eimplemented method and thermal imaging device includes a layer of plasmonic material and a processor. The layer of plasmonic material receive electromagnetic radiation from an object and generates radiance measurements of the electromagnetic radiation at a plurality of wavelengths. The processor determines an emissivity and temperature of the object from the radiance measurements and forms a thermal-based electronic image of the object from the determined emissivity and temperature. 1. A thermal imaging device comprising:a layer of plasmonic material configured to receive electromagnetic radiation from an object and generate radiance measurements of the electromagnetic radiation at a plurality of wavelengths; anda processor configured to determine an emissivity and temperature of the object from the radiance measurements and form a thermal-based electronic image of the object from the determined emissivity and temperature.2. The thermal imaging device of claim 1 , wherein the layer includes at least one pixel of plasmonic material having a plasmonic absorber that is resonant at one of the plurality of wavelengths.3. The thermal imaging device of claim 2 , wherein the plasmonic absorber includes a carbon nanotube section.4. The thermal imaging device of claim 1 , wherein the plasmonic material is dynamically tunable to a selected resonance wavelength.5. The thermal imaging device of claim 1 , wherein the processor is configured to construct a curve that fits the obtained radiance measurements and to determine a characteristic wavelength of the electromagnetic radiation from the curve.6. A thermal imaging device claim 1 , comprising:an optically-sensitive layer including a superpixel having at least one pixel, the at least one pixel including a plasmonic absorber configured to obtain radiance measurements of electromagnetic radiation emitted from an object at a plurality of wavelengths; anda processor configured to determine an emissivity and temperature ...

TERAHERTZ WAVE DETECTION DEVICE AND TERAHERTZ WAVE DETECTION SYSTEM

Provided are a terahertz wave detection device and a terahertz wave detection system to execute checking at high speed with high sensitivity and accuracy and to execute omnidirectional inspection without requiring a large checking system. A flexible array sensor () includes: a terahertz wave detection element () having a flexible single-walled carbon nanotube film (), and a first electrode () and a second electrode () disposed to face each other on a two-dimensional plane of the single-walled carbon nanotube film (); and a flexible substrate () having flexibility to support the terahertz wave detection element () so as to be freely curved. The flexible substrate () is preferably formed in a curved or cylindrical shape, so that the terahertz wave detection elements () are arrayed on the flexible substrate formed in a curved or cylindrical shape. 1. A terahertz wave detection device comprising: a carbon nanotube film having flexibility; and', 'a first electrode and a second electrode that are disposed to face each other on a two-dimensional plane of the carbon nanotube film., 'one or more terahertz wave detection elements, each configured to include2. The terahertz wave detection device as claimed in claim 1 , further comprising:a flexible substrate having flexibility that supports the one or more terahertz wave detection elements so as to be freely curved.3. The terahertz wave detection device as claimed in claim 1 ,wherein the one or more terahertz wave detection elements are arrayed on the flexible substrate.6. The terahertz wave detection device as claimed in claim 1 , further comprising:one or more terahertz oscillators that transmit terahertz waves to be received by the one or more terahertz wave detection elements.7. The terahertz wave detection device as claimed in claim 1 , whereinthe carbon nanotube film contains 50% by weight or more of the single-walled carbon nanotubes.10. A terahertz wave detection system comprising:{'claim-ref': {'@idref': 'CLM-00001', ...

VERTICAL MICROBOLOMETER CONTACT SYSTEMS AND METHODS

Systems and methods are directed to vertical legs for an infrared detector. For example, an infrared imaging device may include a microbolometer array in which each microbolometer includes a bridge and a vertical leg structure that couples the bridge to a substrate such as a readout integrated circuit. The vertical leg structure may run along a path that is parallel to a plane defined by the bridge and may be oriented perpendicularly to the plane. The path may be disposed within, below, or above the plane defined by the bridge. 1. A method of forming an infrared imaging device , the method comprising:providing a device having a bolometer bridge structure formed on a sacrificial layer;depositing an additional sacrificial layer over the sacrificial layer;forming openings in the additional sacrificial layer;forming leg materials on sidewalls of the openings; andremoving the sacrificial layer and the additional sacrificial layer to suspend the bolometer bridge structure and the leg materials above a substrate of the infrared imaging device.2. The method of claim 1 , wherein the forming of the leg materials comprises:depositing a first dielectric layer on portions of the sacrificial layer and the additional sacrificial layer;performing a spacer etch of the first dielectric layer so that portions of the first dielectric layer remain on the sidewalls;depositing a metal layer over the portions of the first dielectric layer on the sidewalls, over the bolometer bridge structure, and over a contact structure of the device;depositing a second dielectric layer over the metal layer; andremoving portions of the metal layer and the second dielectric layer.3. The method of claim 2 , wherein:the removing of the portions of the metal layer and the second dielectric layer comprises forming vertical leg structures for the infrared imaging device that run continuously from the bolometer bridge structure to the contact structure;at least one of the vertical leg structures has (i) a first ...

Microbolometer detectors and arrays for printed photonics applications

Microbolometer detectors and arrays fabricated using printed electronics and photonics techniques, including ink-based printing, are disclosed. A microbolometer detector can include a substrate, a platform suspended above the substrate, and a thermistor printed on the platform and made of a thermistor material including an electrically conducting polymer, for example a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymeric composition. The microbolometer detector can also include an electrode structure electrically connected to the thermistor, and an ohmic contact layer interposed between the thermistor and the electrode structure. The electrode structure can be made of an electrode material including silver, while the ohmic contact layer can be made of an ohmic contact material including a PEDOT-carbon nanotube polymeric composition. A microbolometer array can include a plurality of microbolometer detectors arranged in a linear or two-dimensional matrix.

Light sensing device and fabricating method thereof

A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.

SUBSTRATE HAVING A HOLE, METHOD FOR MANUFACTURING THE SUBSTRATE, INFRARED SENSOR, AND METHOD FOR MANUFACTURING THE INFRARED SENSOR

A resist mask having penetrating holes is formed on a rear surface of a silicon substrate A planar shape of each penetrating hole is formed to a shape with which its respective sides are curved to inwardly convex arcuate shapes with respect to a regular quadrilateral that is a target shape of a transverse section at a processing ending end side of a corresponding cavity Next, dry etching is applied to the silicon substrate The cavities are thereby formed in the silicon substrate As the etching progresses, a transverse sectional shape of each cavity decreases in inward projection amounts of the respective arcuate shaped sides in the transverse sectional shape of the corresponding penetrating hole of the resist mask At a processing ending end side of the cavity its planar shape is substantially the same shape as the regular quadrilateral that is the target shape. 1. A substrate having a hole , the substrate having the hole being such thata transverse sectional shape of a processing starting end side of the hole is a shape with which respective sides of a predetermined polygon are formed to inwardly convex arcuate shapes anda transverse sectional shape of a processing ending end side of the hole is a shape closer to the predetermined polygon in comparison to the transverse sectional shape of the processing starting end side of the hole.2. The substrate having the hole according to claim 1 , wherein the predetermined polygon is a quadrilateral.3. The substrate having the hole according to claim 1 , wherein the predetermined polygon is a triangle.4. An infrared sensor comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the substrate having the hole according to ;'}a heat insulating film held by the substrate so as to face the hole; anda pyroelectric element formed above the heat insulating film.5. The infrared sensor according to claim 4 , wherein the pyroelectric element includes a lower electrode formed at a surface of the heat insulating film at an opposite ...

Infrared sensor

An infrared sensor includes: an infrared detecting device; a lens disposed above the infrared detecting device; an member that is disposed at a side of an upper surface of the lens and includes an opening; and a gap that intervenes between the member and the lens and has a wider range than the opening.

High speed graphene oxide bolometers and methods for manufacturing the same

Bolometers and methods of forming the same are provided. A bolometer that includes a substrate, a support structure comprising at least one SiGe layer and at least one Si layer, an absorber comprising reduced graphene oxide, and a thermistor comprising partially reduced graphene oxide are described. Also described are methods for forming bolometers and the parts contained therein.

IMAGING DEVICE

An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element. 1. (canceled)2. An imaging device comprising:a semiconductor substrate;a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; andone or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate,the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element,each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.3. The imaging device according to claim 2 , wherein a volume of the first thermoelectric conversion unit is less than ...

Device for detecting electromagnetic radiation comprising a raised electrical connection pad

A device for detecting electromagnetic radiation, including a readout circuit, which is located in a substrate, and an electrical connection pad, which is placed on the substrate, including a metal section that is raised above the substrate and electrically connected to the readout circuit. The detection device furthermore includes a protection wall that extends under the raised metal section so as to define therewith at least one portion of a cavity, and what is called a reinforcing layer section that is located in the cavity and on which the raised metal section rests.

MULTISPECTRAL PLASMONIC THERMAL IMAGING DEVICE

A computer-implemented method of forming a thermal-based electronic image of an object that includes receiving electromagnetic radiation emitted by the object at an optically sensitive layer including a superpixel having a plurality of pixels. Each pixel of the plurality of pixels includes a plasmonic absorber having a characteristic resonance wavelength and that generates a radiance measurement of the electromagnetic radiation at its characteristic resonance wavelength. The method further provides for determining, at a processor, an emissivity and temperature for the electromagnetic radiation received at the superpixel using the radiance measurements obtained at the pixels of the superpixel. In addition, the method provides for forming an image of the object from the determined emissivity and temperature. 1. A computer-implemented method of forming a thermal-based electronic image of an object , the method comprising:receiving electromagnetic radiation emitted by the object at an optically sensitive layer including a superpixel having a plurality of pixels, wherein each pixel of the plurality of pixels includes a plasmonic absorber having a characteristic resonance wavelength and that generates a radiance measurement of the electromagnetic radiation at its characteristic resonance wavelength;determining, at a processor, an emissivity and temperature for the electromagnetic radiation received at the superpixel using the radiance measurements obtained at the pixels of the superpixel; andforming an image of the object from the determined emissivity and temperature.2. The method of claim 1 , further comprising applying a voltage to the pixel to change the resonance wavelength of the plasmonic absorber.3. The method of claim 1 , further comprising determining claim 1 , at the processor claim 1 , a radiance curve for the electromagnetic radiation from the radiance measurements.4. The method of claim 1 , wherein the plasmonic absorber is a carbon nanotube section having a ...

Multispectral plasmonic thermal imaging device

A computer-eimplemented thermal imaging device having an optically-sensitive layer that includes a superpixel having at least one pixel. The at least one pixel includes a plasmonic absorber configured to obtain radiance measurements of electromagnetic radiation emitted from an object at a plurality of wavelengths. The device further includes a processor configured to determine an emissivity and temperature for the electromagnetic radiation received at the plasmonic material from the object using the radiance measurements and to form an image of the object from the determined emissivity and temperature.

Microbolometer systems and methods

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

MICROBOLOMETER CONTACT SYSTEMS AND METHODS

Systems and methods are directed to contacts for an infrared detector. For example, an infrared imaging device includes a substrate having a first metal layer and an infrared detector array coupled to the substrate via a plurality of contacts. Each contact includes for an embodiment a plurality of metal studs each having a first end and a second end and each disposed between the first metal layer and a second metal layer, wherein the first end of each metal stud is disposed on a portion of the first metal layer that is at least partially on the surface of the substrate. 1a substrate having a first metal layer disposed at least partially on a surface of the substrate; andan infrared detector array coupled to the substrate via a plurality of contacts.. An infrared imaging device comprising: This application is a continuation of U.S. patent application Ser. No. 14/709,383 filed May 11, 2015, which is a continuation-in-part of U.S. patent application Ser. No. 14/281,780 filed May 19, 2014, which is a continuation of U.S. patent application Ser. No. 12/576,971 filed Oct. 9, 2009 (now U.S. Pat. No. 8,729,474 issued May 20, 2014), all of which are incorporated by reference herein in their entireties.One or more embodiments of the invention relate generally to infrared cameras and, more particularly, to microbolometer contact systems and methods, such as for microbolometer focal plane arrays.A microbolometer is an example of a type of infrared detector that may be used within an infrared imaging device (e.g., an infrared camera). For example, the microbolometer is typically fabricated on a monolithic silicon substrate to form an infrared (image) detector array, with each microbolometer of the infrared detector array functioning as a pixel to produce a two-dimensional image. The change in resistance of each microbolometer is translated into a time-multiplexed electrical signal by circuitry known as the read out integrated circuit (ROIC). The combination of the ROIC and the ...

OPTICAL DETECTION APPARATUS AND METHOD

According to an example aspect of the present invention, there is provided an apparatus comprising: an optic fibre input (); a plurality of photonic detectors () comprising a nanowire and biased with an electric input; a set of modulators () connected to the optic fibre input (), each of the modulators () being connected to one of the photonic detectors () for forming a modulated optical detector signal; and an optic fibre output () for the modulated optical detector signal. The optic fibre input (), the photonic detectors (), the set of modulators (), and the optic fibre output () are formed on a single chip (). 122-. (canceled)24. The apparatus according to claim 23 , wherein the chip further comprises a first demultiplexer connected to the set of modulators for providing a selected wavelength of light from a multi-wavelength light source to each modulator.25. The apparatus according to claim 23 , wherein the chip further comprises a multiplexer for combining signals from each of the modulators into a single optic fibre connectable to the chip.26. The apparatus according to claim 25 , wherein the apparatus further comprises or is connectable toa second demultiplexer for demultiplexing the modulated optical detector signal in the single optic fibre, anda set of interferometric phase detectors connected to the second multiplexer, arranged to detect modulation at the demultiplexed optical detector signal.27. The apparatus according to claim 26 , wherein the multiplexer and the second demultiplexer are connectable to the same single optic fibre for both the optic fibre input and the optic fibre output claim 26 , and the single optic fibre is connectable to a circulator for separating the input and the output.28. The apparatus according to claim 23 , wherein the biasing of the plurality of photonic detectors is arranged with a single electric wire.29. The apparatus according to claim 23 , wherein the chip is cryogenically refrigerated and the photonic detectors are ...

RUGGEDIZED DEWAR UNIT FOR INTEGRATED DEWAR DETECTOR ASSEMBLY

An Integrated Dewar Detector Assembly (IDDA) is presented. The IDDA comprises: a cold finger base; an elongated Dewar envelope having a proximal end associated with the cold finger base and a distal end comprising an optical window; an elongated tubular cold finger located inside said elongated Dewar envelope and having a proximal end at the cold finger base and a distal end for carrying a detector so as to expose the detector to incoming radiation through said optical window; an internal front support member extending from an inner surface of the Dewar envelope at its distal end to the distal end of the cold finger; and at least one wideband dynamic vibration absorber assembly located outside the Dewar envelope and attached to at least one location on an exterior surface of the Dewar envelope, said dynamic vibration absorber thereby attenuating vibration of the cold finger and the detector. 1. An Integrated Dewar Detector Assembly (IDDA) , comprising:a cold finger base;an elongated Dewar envelope having a proximal end associated with the cold finger base and a distal end comprising an optical window;an elongated tubular cold finger located inside said elongated Dewar envelope and having a proximal end at the cold finger base and a distal end for carrying a detector so as to expose the detector to incoming radiation through said optical window;an internal front support member extending from an inner surface of the elongated Dewar envelope at the distal end thereof to the distal end of the cold finger; andat least one wideband dynamic vibration absorber assembly located outside the elongated Dewar envelope and attached to at least one location on an exterior surface of the elongated Dewar envelope, said at least one dynamic vibration absorber thereby attenuating vibration of the elongated tubular cold finger and the detector.2. The IDDA according to claim 1 , wherein the at least one wideband dynamic absorber is configured as a heavily damped mass-spring mechanical ...

PROCESS FOR MANUFACTURING A DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION, COMPRISING A SUSPENDED DETECTION ELEMENT

A process for fabricating a device for detecting electromagnetic radiation includes the step of providing a detecting element suspended by a supporting pillar. The pillar has a lateral through-aperture formed via a local break in the continuity of a layer of interest, because of the presence of a jut in a vertical orifice. 1: A process for fabricating a device for detecting electromagnetic radiation , the detecting device comprising:a substrate comprising a readout circuit; andat least one thermal detector resting on the substrate and connected to the readout circuit, comprising a detecting element suspended above the substrate by at least one supporting pillar; depositing, on the substrate, a first sacrificial layer;', 'producing, on the first sacrificial layer, at least one intermediate pad intended to form a jut, the intermediate pad being made of at least one material sensitive to a chemical etchant used subsequently to etch sacrificial layers;', 'depositing, on the first sacrificial layer and the intermediate pad, a second sacrificial layer;', 'producing, by locally etching the first and second sacrificial layers, at least one vertical orifice that is bounded transversely by a lateral border, said orifice being positioned so that a segment of the intermediate pad protrudes into the vertical orifice, thus forming a jut;', 'carrying out conformal deposition, on the lateral border of the vertical orifice, of a layer of interest used to form the supporting pillar, the layer of interest defining an empty internal space of the supporting pillar, the jut causing a local break in the continuity of the layer of interest, forming a lateral through-aperture in the supporting pillar;', 'depositing a sacrificial filling layer, so as to fill the empty internal space of the supporting pillar;', 'producing, on the second sacrificial layer and the sacrificial filling layer, the detecting element, which rests on and in contact with the supporting pillar; and', 'suspending the ...

Ir detector arrays

We disclose herein an infra-red (IR) detector comprising a substrate comprising at least one etched portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises at least one dielectric membrane, which is adjacent to the etched portion of the substrate. The detector further comprises a first sensing area and a second sensing area each located in a dielectric membrane and a plurality of thermocouples. At least one thermocouple comprises first and second thermal junctions. The first thermal junction is located in or on the first sensing area and the second thermal junction is located in or on the second sensing area.

Small-size infrared sensor structure and manufacturing method therefor

The present disclosure discloses a small-size infrared sensor structure and a manufacturing method therefor. Trench is etched in a conductive beam region, and the conductive beam is formed by the sidewall of the trench, so that the small-size infrared sensor structure with adjacent pixel structures can share one conductive support hole, thereby improving integration degree of the pixels, enlarging the regions of the infrared detection regions of the pixels, and improving infrared detection efficiency.

INFRARED DETECTING DEVICE

An infrared detecting device includes a substrate and a thermal photo detecting element. The substrate includes a concave portion, and a frame portion positioned on the periphery of the concave portion. The thermal photo detecting element includes leg portions and a detecting portion. The leg portions are connected on the frame portion so that the detecting portion is positioned above the concave portion. The thermal photo detecting element includes a first electrode layer disposed on the substrate, a detecting layer disposed on the first electrode layer, and a second electrode layer disposed on the detecting layer. The linear thermal expansion coefficient of the first electrode layer is larger than the linear thermal expansion coefficient of the substrate. The linear thermal expansion coefficient of the substrate is larger than the linear thermal expansion coefficient of the detecting layer. 1. An infrared detecting device comprising:a substrate including a concave portion, and a frame portion positioned on a periphery of the concave portion; and a leg portion;', 'a detecting portion, the leg portion being connected on the frame portion so that the detecting portion is positioned above the concave portion:', 'a first electrode layer disposed on the substrate;', 'a detecting layer disposed on the first electrode layer; and', 'a second electrode layer disposed on the detecting layer,, 'a thermal photo detecting element includingwherein a linear thermal expansion coefficient of the first electrode layer is larger than a linear thermal expansion coefficient of the substrate, andthe linear thermal expansion coefficient of the substrate is larger than a linear thermal expansion coefficient of the detecting layer.2. The infrared detecting device of claim 1 , further comprising a first intermediate layer at least at part between the substrate and the first electrode layer.3. The infrared detecting device of claim 2 , wherein an element contained in the substrate is ...

Graphene nanomechanical radiation detector

A thermo-mechanical resonating microbolometer has a graphene absorber suspended above a metallic silicon substrate to form a mechanical resonator. Microelectronic circuitry electrically connected to the graphene resonator and the metallic silicon substrate drives electronically the motion of the graphene absorber. Shifts in the mechanical resonant frequency of the graphene layer due to the absorption of incident radiation is measured electronically or using optical interferometry. A bolometer sensor array may be fabricated using such graphene microbolometer elements. 1. A thermo-mechanical resonating radiation detector comprising:a silicon substrate;a graphene resonator;graphene tethers attached to the graphene resonator;silicon dioxide supports between the silicon substrate and the graphene tethers, supporting the tethers to suspend the graphene resonator above the silicon substrate, such that the graphene resonator forms a mechanical resonator;microelectronic circuitry electrically connecting the graphene resonator and the silicon substrate.2. The thermo-mechanical resonating radiation detector of wherein the graphene resonator has a thickness less than 1 nm.3. The thermo-mechanical resonating radiation detector of wherein the graphene resonator is a monolayer of carbon atoms.4. The thermo-mechanical resonating radiation detector of wherein the graphene resonator has a diameter in the range 1-10 μm.5. The thermo-mechanical resonating radiation detector of wherein the graphene tethers have a minimum width of at most 820 nm claim 1 , or more preferably 570 nm claim 1 , or most preferably 10 nm.6. The thermo-mechanical resonating radiation detector of wherein the graphene resonator and the graphene tethers have a discrete rotational symmetry around a point in a plane of the graphene resonator.7. The thermo-mechanical resonating radiation detector of further comprising a probe laser claim 1 , optical interferometer claim 1 , and photodiode for measuring a resonant ...

RADIATION DETECTOR AND METHOD FOR MANUFACTURING A RADIATION DETECTOR

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate. 1. A radiation detector comprising a substrate and a membrane suspended above the substrate by spacers , wherein the spacers electrically contact a radiation sensor formed in the membrane and predominately thermally insulate the membrane from the substrate.2. The radiation detector according to claim 1 , wherein the membrane is suspended on the spacers without ridges or wherein the membrane is suspended on at least one of the spacers by a ridge claim 1 , the thermal insulation at the at least one spacer being favored by the spacers.3. The radiation detector according to claim 1 , wherein a reflector is disposed between the substrate and the membrane.4. The radiation detector according to claim 3 , wherein the reflector is disposed between the substrate and the membrane by further spacers.5. The radiation detector according to claim 3 , wherein the reflector comprises a metal layer.6. The radiation detector according to claim 3 , wherein the distance between the reflector and the membrane is an odd claim 3 , integral multiple of a quarter of a main wavelength to be detected.7. The radiation detector according to claim 1 , wherein the spacers are hollow on the inside.8. The radiation detector according to claim 1 , wherein the spacers are manufactured by using ALD and a sacrificial layer method.9. The radiation detector according to claim 1 , wherein a wall of the spacers comprises a plurality of layers of different materials.10. The radiation detector according to claim 9 , wherein the plurality of layers comprise at least one layer of TiN claim 9 , Ti claim 9 , Cu claim 9 , W claim 9 , Sn claim 9 , Ni claim 9 , Au claim 9 , Al or a combination thereof claim 9 , surrounded by an oxide layer.11. The radiation detector according to ...

SYSTEM FOR MEASURING LIGHT INTENSITY DISTRIBUTION

A light intensity distribution comprises a carbon nanotube array located on a surface of a substrate, a reflector, an imaging element and a cooling device. The carbon nanotube array absorbs photons from a light source and radiates a visible light. The reflector reflects the visible light and is spaced from the carbon nanotube array. The imaging element images the visible light reflected by the reflector. The cooling device is used to cool the substrate to make a contact surface between the substrate and the carbon nanotube array maintain a constant temperature. The cooling device is located between the substrate and the imaging device. The imaging device is spaced from the cooling device. 1. A system for measuring light intensity distribution , comprising:a substrate having a surface;a carbon nanotube array located on the surface of the substrate, wherein the carbon nanotube array is configured to absorb photons from a light source and radiate a visible light;a reflector spaced from the carbon nanotube array and configured to reflect the visible light ; andan imaging element configured to image the visible light reflected by the reflector; anda cooling device configured to cool the substrate to make a contact surface between the substrate and the carbon nanotube array maintain a constant temperature, wherein the cooling device is located between the substrate and the imaging device, and the imaging device is spaced from the cooling device.2. The system of claim 1 , wherein the cooling device is located on a substrate surface away from the carbon nanotube array.3. The system of claim 1 , wherein a cooling device cross-sectional area is less than or equal to a substrate cross-sectional area in a light irradiation direction of the light source.4. The system of claim 1 , wherein the cooling device comprises the cooling medium claim 1 , and the cooling medium is a cooling liquid or a cooling gas.5. The system of claim 1 , further comprising a plurality of temperature ...

Epitaxial Graphene Quantum Dots for High-Performance Terahertz Bolometers

Devices including graphene quantum dots yield extremely high performance THz bolometers, by measuring the current of hot electrons formed in the graphene source and drain electrodes of the device and propagating through the graphene quantum dot connected thereto. Devices may also include additional materials such as MoS, as well as one or more gate electrodes to alter performance as needed. 1. A hot-electron bolometer comprising:a SiC substrate;a quantum dot pattern of epitaxial graphene formed on the SiC substrate; anda source electrode and drain electrode contacting the quantum dot pattern.2. The hot-electron bolometer of claim 1 , wherein the source electrode and the drain electrode are formed of graphene and layers of Cr and Au.3. The hot-electron bolometer of claim 1 , further comprising an antenna coupled thereto.4. The hot-electron bolometer of claim 1 , wherein the quantum dot pattern includes a quantum dot having a diameter approximately equal to or less than 200 nm.5. The hot-electron bolometer of claim 1 , wherein the SiC substrate surface includes basal plane terraces bounded by steps.6. The hot-electron bolometer of claim 5 , wherein the quantum dot pattern is arranged such that current flow is perpendicular to the steps of the SiC substrate surface.7. The hot-electron bolometer of claim 1 , further comprising at least one gate electrode.8. The hot-electron bolometer of claim 7 , wherein the at least one gate electrode is formed on at least part of the quantum dot pattern.9. The hot-electron bolometer of claim 1 , further comprising magnetic molecules grafted to the quantum dot pattern.10. The hot-electron bolometer of claim 1 , further comprising multiple quantum dot patterns connected in parallel formed on the SiC substrate.11. A hybrid structure bolometer comprising:a SiC substrate;a pattern of epitaxial graphene formed on the SiC substrate;{'sub': 2', '2, 'a single layer of MoStransferred to the epitaxial graphene, wherein at least a portion of the ...

SMD-enabled infrared thermopile sensor

An SMD-enabled infrared thermopile sensor has at least one miniaturized thermopile pixel on a monolithically integrated sensor chip accommodated in a hermetically sealed housing which consists of an at least partially non-metallic housing substrate and a housing cover. A gas or a gas mixture is contained in the housing. The sensor has a particularly low overall height, in particular in the z direction. This is achieved by virtue of an aperture opening being introduced in the housing cover opposite the thermopile pixel(s), which aperture opening is closed with a focusing lens which focuses the radiation from objects onto the thermopile pixel(s) on the housing substrate, and by virtue of a signal processing unit being integrated on the same sensor chip next to the thermopile pixels, wherein the total housing height and the housing cover are at most 3 mm or less than 2.5 mm. 116.-. (canceled)17. An SMD-enabled thermopile infrared sensor for contactless temperature measurement , as a hotspot , or for gesture detection ,having at least one thermopile pixel on a monolithic integrated sensor chip, which is arranged in a hermetically sealed housing, which consists of an at least partially nonmetallic housing substrate and a housing cover,wherein a gas or gas mixture is located in the housing,{'b': 26', '3', '29', '4', '29', '1, 'wherein an aperture opening () is introduced into the housing cover () opposite to the at least one thermopile pixel (), which opening is closed using a focusing lens (), which focuses radiation of objects onto the at least one thermopile pixel () on the housing substrate (),'}{'b': 1', '30', '31', '2, 'wherein the housing substrate () consists of an insulator, which is provided with a recess () and side walls () for accommodating the sensor chip (),'}{'b': 3', '32', '31', '1, 'wherein the housing cover () has angled lateral edges (), which are supported hermetically sealed on the side walls () of the housing substrate (),'}{'b': 1', '9', '1', '10, ...

Passive detectors for imaging systems

Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum.

THERMOELECTRIC DEVICE

Disclosed is a thermoelectric cell having thermoelectric tracks of alternating types connected in series by metallic connections, including a platform suspended over a substrate by arms, the platform and the arms being parts of the same thermally and electrically insulating layer, and each arm supporting a thermoelectric track. 1525253535454424444454550424444454552525353. Thermoelectric cell having thermoelectric tracks (A , B , A , B) of alternating types connected in series by metallic connections (A , B) , comprising a platform () suspended over a substrate by arms (A , B , A , B) , the platform and the arms being parts of the same thermally and electrically insulating layer () , and each arm supporting a thermoelectric track , in which the platform () has a rectangular shape , two arms (A , B) extend from one side of the rectangle and two arms (A , B) extend from the opposite side , thermoelectric tracks (A , B , A , B) of the same type being positioned on arms located on the same side of the rectangle.252535253. Cell as defined in claim 1 , in which the thermoelectric tracks (A and A claim 1 , B and B) are made of doped bismuth telluride claim 1 , the types corresponding to types of conductivity.350. Cell as defined in claim 1 , in which the insulating layer () is made of silicon oxide claim 1 , silicon nitride or aluminium oxide.444444545. Cell as defined in claim 1 , in which the ratio between a length and a width of each arm (A claim 1 , B claim 1 , A claim 1 , B) is greater than 5.5. Cell as defined in claim 1 , also including an absorbent coating placed on the platform.67476. Thermoelectric device comprising a number of thermoelectric cells as defined in claim 1 , arranged in a matrix and having a common substrate claim 1 , the thermoelectric cells of each column of the matrix being connected in series between second metallic contacts ( claim 1 , ).7. Thermopile comprising a device as defined in .84284. Thermopile as defined in claim 7 , in which the ...

Device and method for detecting energy beam

A device for detecting energy beam is provided. The device comprises a carbon nanotube structure, a support structure and an infrared detector. The carbon nanotube structure comprises a plurality of carbon nanotubes, and an extending direction of each carbon nanotube is parallel to a direction of an energy beam to be detected. The support structure is configured to support the carbon nanotube structure, and make a portion of the carbon nanotube structure suspended in the air. The infrared detector is located below and spaced apart from the carbon nanotube structure. The infrared detector is configured to detect a temperature of a suspended portion of the carbon nanotube structure, and image according to a temperature distribution of the carbon nanotube structure. A method for detecting energy beam is also provided.

Sensor and method for manufacturing a sensor

Sensor (100; 200), mit folgenden Merkmalen: einem Substrat (110); einer Membran (120; 220); einem ersten und einem zweiten Abstandshalter (130-1, 130-2), die auf dem Substrat (110) angeordnet sind; einer ersten Haltestruktur (140-1), die seitlich neben der Membran (120; 220) von dem ersten Abstandshalter (130-1) gehalten wird und eine erste Elektrode (150-1) auf einer dem Substrat (110) zugewandten ersten Hauptseite (122) der Membran (120; 220) kontaktiert; und einer zweiten Haltestruktur (140-2), die seitlich neben der Membran (120; 220) von dem zweiten Abstandshalter (130-2) gehalten wird und eine zweite Elektrode (150-2) auf einer der ersten Hauptseite (122) gegenüberliegenden zweiten Hauptseite (124) der Membran (120; 220) kontaktiert, so dass die Membran (120; 220) über den ersten und zweiten Abstandshalter (130-1, 130-2) aufgehängt und mit Kontaktflächen (112-1, 112-2) des Substrats (110) elektrisch verbunden ist; wobei die Membran (120; 220) einen pn-Übergang (222) aufweist, der sich parallel zu einer Oberfläche des Substrats (110) erstreckt, so dass der pn-Übergang (222) seriell zwischen die Kontaktflächen (112-1, 112-2) des Substrats (110) geschaltet ist. Sensor (100; 200) having the following features: a substrate (110); a membrane (120; 220); first and second spacers (130-1, 130-2) disposed on the substrate (110); a first holding structure (140-1) which is held laterally next to the membrane (120; 220) by the first spacer (130-1) and a first electrode (150-1) on a first main side (110) facing the substrate (110) 122) the membrane (120; 220) contacted; and a second holding structure (140-2) which is held laterally next to the membrane (120; 220) by the second spacer (130-2) and a second electrode (150-2) on a second opposite side of the first main side (122) Main side (124) of the membrane (120; 220) contacted so that the membrane (120; 220) is suspended over the first and second spacers (130-1, 130-2) and with contact surfaces (112-1, 112-2) the substrate ...

Thermopile infrared sensor structure with a high filling level

填充有介质(15)的外壳中的具有高填充水平的热电堆红外线传感器结构由承载基板(11)构成，所述承载基板(11)具有至外部的电连接件(28,28’)并且用光学组件(13)进行密封，其中，对所述外壳中的所述承载基板(11)施加传感器芯片(14)，所述芯片具有多个热电传感器元件结构(16)，所述多个热电传感器元件结构(16)的所谓的“热接触件”(10)位于跨过具有良好导热性的硅承载体(24)中的各个腔体(9)伸展的单独的薄膜(3)上，其中，“冷接触件”(25)位于所述硅承载体(24)上或者所述硅承载体(24)的附近。本发明要解决的问题是详细说明一种热电堆红外线阵列传感器(传感器单元)，该传感器具有小芯片尺寸，具有高的热分辨和特别高的填充水平。该传感器优选地意在工作在具有正常压力或者减小的压力的气体中，并且意在能够在无需用于密封外壳的复杂技术的情况下在超高真空下以划算的方式大量生产。这凭借如下事实得以实现：辐射收集器结构(17)位于跨越腔体(9)的传感器元件结构(16)的每个单独的薄膜(3)的上方。

Device having a membrane structure for detecting thermal radiation, method of production and use of the device

본 발명은 상기 열 복사를 전기 신호로 변환하기 위한 하나 이상의 열 검출기 소자가 배열되는 하나 이상의 막, 및 상기 막을 지지하고 상기 전기 신호를 판독하는 하나 이상의 판독 회로를 지지하여, 상기 검출기 소자와 상기 판독 회로가 전기 도통 접속에 의해 상기 막을 통해 전기 접속되는 하나 이상의 회로 지지대를 포함하는 열 복사 검출 장치에 관한 것이다. 또한, 본 발명은 a) 상기 검출기 소자를 갖춘 막과 하나 이상의 전기 도통 접속을 제공하고 상기 회로 지지대를 준비하는 단계와, b) 상기 검출기 소자와 판독 회로가 상기 막을 통과하는 전기 접속에 의해 함께 전기적으로 연결되는 방식으로 상기 막과 회로 지지대를 결합하는 단계를 포함하는 열 복사 검출 장치 제조 방법에 관한 것이다. 제조 단계는 바람직하게 웨이퍼 레벨에서 수행되며, 기능화된 실리콘 기판이 서로에 대해 적층되어 서로 단단히 접합된 후에 개별 소자로 분할된다. 바람직하게, 검출기 소자는 파이로-전기 검출기 소자를 포함한다. 상기 장치는 모션 검출기, 프레전스 검출기 및 열 영상 카메라 분야에 적용될 수 있다. The present invention provides a thermal imaging system comprising at least one film on which one or more thermal detector elements are arranged for converting the thermal radiation into an electrical signal and one or more readout circuits for supporting the film and reading the electrical signals, And at least one circuit support to which the circuit is electrically connected through the film by means of an electrical connection. The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of: a) providing at least one electrical connection with a film having the detector element and providing the circuit support; b) And combining the membrane and the circuit support in such a manner that the membrane and the circuit support are connected to each other. The manufacturing steps are preferably performed at the wafer level, and the functionalized silicon substrates are divided into individual elements after being laminated to each other and tightly bonded to each other. Preferably, the detector element comprises a pyroelectric detector element. The apparatus can be applied to the field of motion detectors, presence detectors and thermal imaging cameras.

Face source black matrix

本发明涉及一种面源黑体，所述面源黑体包括一面板，该面板具有两个表面，将所述面板的两个表面分别定义为第一表面和第二表面，其中，所述面板的第一表面设置有多个碳纳米管，所述多个碳纳米管的延伸方向基本垂直于所述面板的第一表面。本发明提供的面源黑体具有较高的发射率和较长的使用寿命。

Sensor

The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element. The cap includes a diffractive optical element and an aperture stop which collectively determine the wavelength of incident radiation that is allowed through the cap and onto the at least one optical element.

Radiation sensor with cap and optical elements

The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element. The cap includes a diffractive optical element and an aperture stop which collectively determine the wavelength of incident radiation that is allowed through the cap and onto the at least one optical element.

Thermopile infrared sensor by monolithic silicon micromachining

A thermal infrared sensor is provided in a housing with optics and a chip with thermoelements on a membrane. The membrane spans a frame-shaped support body that is a good heat conductor, and the support body has vertical or approximately vertical walls. The object is to provide a thermopile infrared sensor in monolithic silicon micromachining technology, wherein the infrared sensor has a high thermal resolution capacity with a small chip size, a high degree of filling and a high response rate. The thermopile sensor structure consists of a few long thermoelements per sensor cell. The thermoelements being arranged on connecting webs that connect together hot contacts on an absorber layer to cold contacts of the thermoelements. The membrane is suspended by one or more connecting webs and has, on both sides of the long thermoelements, narrow slits that separate the connecting webs from both the central region and also the support body. At least the central region is covered by the absorber layer.

IR thermopile detector array

我们在此公开了一种红外(IR)检测器，该红外(IR)检测器包括衬底，包括至少一个蚀刻部分和衬底部分；电介质层，被设置在所述衬底上。电介质层包括至少一个电介质膜，其与所述衬底的所述蚀刻部分相邻。该检测器还包括第一感测区域和第二感测区域以及多个热电偶，第一感测区域和第二感测区域中的每一者位于电介质膜中。至少一个热电偶包括第一和第二热接点。第一热接点位于第一感测区域中或第一感测区域上，并且第二热接点位于第二感测区域中或第二感测区域上。

Electronic equipment

【課題】熱電変換素子と、光電変換素子とトランジスタまたはダイオードとの少なくとも一方と、をモノリシックに集積化すること、または、ｐ型熱電変換部とｎ型熱電変換部とが干渉を抑制すること。 【解決手段】本発明は、熱電変換を行なう半導体層３８を含む熱電変換素子１００と、前記半導体層３８の少なくとも一部の層が光電変換を行なう光電変換素子１０２と、前記半導体層３８の少なくとも一部の層を動作層とするトランジスタ１０４またはダイオードと、の少なくとも一方と、を具備する電子装置である。 【選択図】図１ A thermoelectric conversion element and at least one of a photoelectric conversion element and a transistor or a diode are monolithically integrated, or a p-type thermoelectric conversion unit and an n-type thermoelectric conversion unit suppress interference. The present invention relates to a thermoelectric conversion element including a semiconductor layer that performs thermoelectric conversion, a photoelectric conversion element that at least a part of the semiconductor layer performs photoelectric conversion, and at least one of the semiconductor layers. The electronic device includes at least one of a transistor 104 and a diode having some layers as an operation layer. [Selection] Figure 1

Electrical connection pad, for detecting electromagnetic radiation device including rise

本发明涉及一种用于检测电磁辐射的装置(1)，其包括位于衬底(2)中的读出电路(10)和位于该衬底上的电连接垫(30)，所述电连接垫包括在衬底上升起并且电连接到读出电路的金属部分(31)。该检测装置还包括保护壁(34)和被称为加强层部分(4)的部分，该保护壁在升起的金属部分下方延伸，以便与其一起限定腔(3)的至少一部分，该加强层部分(4)位于腔中并且升起的金属部分置于该加强层部分上。

Monolithic si-micromechanical thermopile-infrared-sensor

본 발명은 수직 또는 거의 수직인 벽들을 가지며 열 전도성이 우수한 프레임 형태의 지지체 위에 제공되는 멤브레인 상에서 써모파일(thermopile)형, 볼로미터(bolometer)형 또는 초전(pyroelectric)형 센서 구조물들 형태로 형성되는 열전 소자들을 갖는 칩과 광학 수단을 구비한 하우징 내 열 적외선 센서에 관한 것이다. 본 발명에 의해서는 모놀리식 실리콘 마이크로 기계 써모파일 적외선 센서가 제공되며, 상기 써모파일 적외선 센서는 작은 칩 크기에서 높은 열 분해도, 높은 충전율 및 높은 응답 속도를 갖는다. 이러한 써모파일 적외선 센서의 제공은 써모파일 센서 구조물이 센서 셀(1)당 소수의 긴 열전 소자들(16)로 구성되고, 상기 열전 소자들은 연결 웨브들(6) 상에 배치되며, 상기 연결 웨브들이 흡수체 층(5) 위의 고온 콘택들(9)과 상기 열전 소자들(16)의 저온 콘택들을 서로 연결시키고; 상기 멤브레인(3)이 하나 또는 다수의 연결 웨브들(6)에 현가되며; 상기 멤브레인(3)이 상기 긴 열전 소자들(16)의 양 측면에 폭이 좁은 슬롯들을 포함하고, 상기 슬롯들이 센터 영역과 상기 지지체(2) 모두로부터 상기 연결 웨브들(6)을 분리시키며, 그리고 적어도 상기 센터 영역(4)이 흡수체 층(5)에 의해 오버랩됨으로써 달성된다. The present invention relates to a thermoelectric device formed in the form of a thermopile, bolometer or pyroelectric sensor structure on a membrane provided on a support in the form of a frame having a vertical or nearly vertical wall and having a good thermal conductivity. To a thermal infrared sensor in a housing having a chip with elements and optical means. According to the present invention, a monolithic silicon micromechanical thermopile infrared sensor is provided, and the thermopile infrared sensor has a high thermal decomposition degree, a high filling rate and a high response speed at a small chip size. The provision of such a thermopile infrared sensor is characterized in that the thermopile sensor structure is composed of a small number of long thermoelectric elements 16 per sensor cell 1 and the thermoelectric elements are arranged on the connecting webs 6, Connect the low temperature contacts of the thermoelectric elements (16) with the hot contacts (9) on the absorber layer (5); Said membrane (3) being suspended in one or more connecting webs (6); Wherein the membrane (3) comprises narrow slots on both sides of the long thermoelectric elements (16), the slots separating the connecting webs (6) from both the center region and the support (2) And at least the center region (4) is overlapped by the absorber layer ...

Infrared thermal detector and method of manufacturing the same

本发明提供了一种红外热检测器及其制造方法。该红外热检测器包括：基板；检测器，与基板间隔开，经由局域表面等离子体共振吸收入射红外光，并根据由所吸收的红外光引起的温度变化来改变电阻值；以及热支路，将来自检测器的信号传输到基板。

Electromagnetic radiation sensor and method of manufacture

본 발명에 따른 반도체 센서(100)를 형성하는 방법은, 기판(102)을 제공하는 단계와; 기판 상에 반사 층(104)을 형성하는 단계와; 반사 층 상에 희생 층을 형성하는 단계와; 희생 층 상에 약 50 ㎚ 미만의 두께를 갖는 흡수기 층(106)을 형성하는 단계와; 적어도 하나의 현수 레그(110)와 일체로 흡수기 층 내에 흡수기를 형성하는 단계와; 희생 층을 제거하는 단계를 포함한다. A method of forming a semiconductor sensor (100) in accordance with the present invention includes the steps of: providing a substrate (102); Forming a reflective layer (104) on the substrate; Forming a sacrificial layer on the reflective layer; Forming an absorber layer (106) having a thickness on the sacrificial layer of less than about 50 nm; Forming an absorber within the absorber layer integrally with at least one suspension leg (110); And removing the sacrificial layer.

Device having membrane structure for detecting thermal radiation, method for production and use thereof

FIELD: physics. SUBSTANCE: device has at least one membrane on which at least one thermal detector is mounted for the conversion of thermal radiation into an electric signal and at least one circuit support for carrying the membrane and at least one readout circuit for reading out the electric signal. The detector is electrically connected through the membrane to the readout circuit by a through-contact. The invention also relates to a method of making said device, comprising the following steps: taking a membrane with a detector and at least one electrical through-contact, as well as a circuit support and bringing together the membrane and the circuit support such that the through-contact passing through the membrane closes the electric circuit between the detector and the readout circuit. The device is preferably made in form of circuits on common wafers. Such functional silicon wafers are stacked, reliably connected and the separate ready devices are separated. The detectors used are preferably pyroelectric sensors. The disclosed device is used as a pressure sensor, a proximity sensor and a thermal imager. EFFECT: high accuracy and information content of thermal measurements. 15 cl, 2 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 468 346 (13) C2 (51) МПК G01J 5/10 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2009144001/28, 28.05.2008 (24) Дата начала отсчета срока действия патента: 28.05.2008 (73) Патентообладатель(и): ПАЙРИОС ЛТД. (GB) (43) Дата публикации заявки: 10.07.2011 Бюл. № 19 2 4 6 8 3 4 6 (45) Опубликовано: 27.11.2012 Бюл. № 33 (56) Список документов, цитированных в отчете о поиске: WO 2007054111 A1, 18.05.2007. WO 2007000172 A1, 04.01.2007. FR 2867273 A1, 09.09.2005. EP 1719988 A1, 05.11.2006. RU 2258207 C1, 10.08.2005. 2 4 6 8 3 4 6 R U (86) Заявка PCT: EP 2008/004246 (28.05.2008) C 2 C 2 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 29.12.2009 (87) Публикация заявки ...

Monolithic si-micromechanical thermopile-infrared-sensor

본 발명은 수직 또는 거의 수직인 벽들을 가지며 열 전도성이 우수한 프레임 형태의 지지체 위에 제공되는 멤브레인 상에서 써모파일(thermopile)형, 볼로미터(bolometer)형 또는 초전(pyroelectric)형 센서 구조물들 형태로 형성되는 열전 소자들을 갖는 칩과 광학 수단을 구비한 하우징 내 열 적외선 센서에 관한 것이다. 본 발명에 의해서는 모놀리식 실리콘 마이크로 기계 써모파일 적외선 센서가 제공되며, 상기 써모파일 적외선 센서는 작은 칩 크기에서 높은 열 분해도, 높은 충전율 및 높은 응답 속도를 갖는다. 이러한 써모파일 적외선 센서의 제공은 써모파일 센서 구조물이 센서 셀(1)당 소수의 긴 열전 소자들(16)로 구성되고, 상기 열전 소자들은 연결 웨브들(6) 상에 배치되며, 상기 연결 웨브들이 흡수체 층(5) 위의 고온 콘택들(9)과 상기 열전 소자들(16)의 저온 콘택들을 서로 연결시키고; 상기 멤브레인(3)이 하나 또는 다수의 연결 웨브들(6)에 현가되며; 상기 멤브레인(3)이 상기 긴 열전 소자들(16)의 양 측면에 폭이 좁은 슬롯들을 포함하고, 상기 슬롯들이 센터 영역과 상기 지지체(2) 모두로부터 상기 연결 웨브들(6)을 분리시키며, 그리고 적어도 상기 센터 영역(4)이 흡수체 층(5)에 의해 오버랩됨으로써 달성된다.

Thermoelectric device

本发明涉及一种热电电池单元，其具有通过金属连接件(54A,54B)串联连接的交替类型的热电轨道(52A,52B,53A,53B)，且包括通过臂(44A,44B,45A,45B)悬挂在衬底之上的平台(42)，平台和臂是同一热和电绝缘层的部分，并且每个臂支撑热电轨道。

A kind of infrared thermal reactor structure of the monocrystalline silicon comprising beam diaphragm structure and preparation method thereof

本发明提供一种包含梁膜结构的单晶硅红外热堆结构及其制作方法，所述热堆结构主要包括红外吸收膜、多根单晶硅梁、以及形成于所述单晶硅梁上方的热电材料层等，单晶硅梁和热电材料层形成热偶对。其中，红外吸收膜悬浮于结构中央，热偶对环绕在红外吸收膜四周，热偶对一端与红外吸收膜相连、另一端与支撑膜相连，并通过支撑膜连接到衬底。本发明热堆结构采用单晶硅作为热偶材料，单晶硅具有塞贝克系数高、电阻率低的优点，可实现较高的灵敏度；另外，本发明利用单晶硅梁支撑悬浮的红外吸收膜，既满足了热堆的绝热性要求，同时也具有较高的结构强度；再者，本发明的热堆结构采用单硅片单面加工的方法制作而成，尺寸小，成本低，适合大批量生产。

Temperature sensor with infrared absorbing thin film containing metamaterial structure

ELECTROMAGNETIC RADIATION DETECTION DEVICE HAVING A SAID ELECTRICAL CONNECTION PLATE

L'invention porte sur un dispositif de détection (1) d'un rayonnement électromagnétique, comportant un circuit de lecture (10), situé dans un substrat (2), et un plot de connexion électrique (30), disposé sur le substrat, comportant une portion métallique (31), surélevée au-dessus du substrat et électriquement reliée au circuit de lecture. Le dispositif de détection comprend en outre une paroi de protection (34), s'étendant sous la portion métallique surélevée de manière à délimiter avec celle-ci au moins une partie d'une cavité (3), et une portion (4) de couche, dite de renfort, située dans la cavité, sur laquelle repose la portion métallique surélevée.

RADIATION SENSOR WITH ANTI-GLARE PROTECTION

L'invention concerne un capteur de rayonnement comportant une pluralité de pixels (800) formés dans et sur un substrat semiconducteur (101), chaque pixel comportant une microplanche (103) suspendue au-dessus du substrat par des bras d'isolation thermique (105a, 105b), la microplanche (103) comprenant un élément (601) de conversion d'un rayonnement électromagnétique en énergie thermique, dans lequel, dans chaque pixel (800), au moins un des bras d'isolation thermique (105a, 105b) du pixel comprend une couche (801) en un matériau à changement de phase présentant, en dessous d'une température de transition de phase, une première valeur de conductivité thermique, et, au-dessus de la température de transition de phase, une deuxième valeur de conductivité thermique supérieure à la première valeur. The invention relates to a radiation sensor comprising a plurality of pixels (800) formed in and on a semiconductor substrate (101), each pixel comprising a microplanche (103) suspended above the substrate by heat-insulating arms (105a). , 105b), the microplate (103) comprising an element (601) for converting electromagnetic radiation into thermal energy, wherein, in each pixel (800), at least one of the heat-insulating arms (105a, 105b) of the pixel comprises a layer (801) of a phase change material having, below a phase transition temperature, a first value of thermal conductivity, and, above the phase transition temperature, a second thermal conductivity value greater than the first value.

THERMOELECTRIC DEVICE

THERMAL DETECTOR WITH HIGH INSULATION

Ce détecteur d'un rayonnement électromagnétique, et notamment infrarouge, comprend un substrat et au moins une microstructure comprenant une membrane (2), sensible audit rayonnement, s'étendant sensiblement en regard et à distance dudit substrat, ladite membrane étant solidarisée mécaniquement directement ou indirectement à au moins deux éléments longilignes colinéaires de maintien ou bras de soutien (3), dont l'un au moins est relié mécaniquement au substrat par l'intermédiaire d'un pilier (15), ladite membrane étant en continuité électrique avec le substrat.Les au moins deux bras colinéaires, dits « premiers bras », sont solidaires entre eux au niveau de leurs extrémités solidarisées à la membrane (2) de manière directe ou indirecte au moyen d'un élément de jonction mécanique, essentiellement coplanaire aux bras et à la membrane, l'autre extrémité de l'un au moins desdits bras étant solidaire d'une traverse rigide (4A) essentiellement coplanaire aux bras, et s'étendant sensiblement perpendiculairement par rapport à la dimension principale desdits bras, ladite traverse étant elle-même solidaire du pilier (15) solidaire du substrat. This detector of an electromagnetic radiation, and in particular an infrared radiation, comprises a substrate and at least one microstructure comprising a membrane (2), sensitive to said radiation, extending substantially facing and at a distance from said substrate, said membrane being mechanically secured directly or indirectly to at least two elongate collinear support elements or support arms (3), at least one of which is mechanically connected to the substrate via a pillar (15), said membrane being in electrical continuity with the substrate The at least two collinear arms, called "first arms", are integral with one another at their ends secured to the membrane (2) directly or indirectly by means of a mechanical joining element, essentially coplanar with the arms and to the membrane, ...

DEVICE FOR THE THERMAL DETECTION OF ELECTROMAGNETIC RADIATION AND METHOD OF MANUFACTURING THE SAME

THERMAL DETECTOR FOR ELECTROMAGNETIC RADIATION COMPRISING AN ABSORBENT MEMBRANE FIXED IN SUSPENSION

Electronic detection device and the detector equipped with the device

Ce dispositif électronique de détection comprend un substrat (1) et au moins une microstructure, ladite microstructure comprenant une membrane (9) s'étendant sensiblement en regard et à distance dudit substrat (1), ladite membrane (9) étant solidarisée mécaniquement et connectée électriquement à au moins un élément longiligne de maintien (21, 22), ce dernier étant relié mécaniquement et électriquement audit substrat (1) par l'intermédiaire d'au moins un pilier (5). Le dispositif comprend en outre au moins un élément raidisseur (10-13) s'étendant sur au moins l'une des faces principales de ladite microstructure.

Infrared bolometer e.g. sensor, for e.g. military field, has signal bridge placed between lower and upper substrates to transmit signal from resistor, whose ohmic value varies with infrared heat, of upper substrate to lower substrate

The bolometer has a lower substrate (110), and an upper substrate (120) with an absorbing layer and a resistor whose ohmic value varies with infrared heat absorbed by the layer. The substrates are separated by a predetermined distance and are connected by a spacer (210) to support the upper substrate. A signal bridge (200) is arranged between the substrates for transmitting a signal from the resistor to the lower substrate.

CMOS bolometer

一种用于制造半导体装置的方法包括在互补金属氧化物半导体(CMOS)工艺期间在衬底(100)上形成至少一个牺牲层(106，108，110)。在所述至少一个牺牲层的顶部上沉积吸收体层(130)。去除所述至少一个牺牲层(106，108，110)的在所述吸收体层下方的一部分以形成间隙(G1)，所述吸收体层的一部分悬挂在所述间隙上方。所述牺牲层能够是CMOS工艺的氧化物，所述氧化物被利用选择性氢氟酸气相干式蚀刻释放工艺去除以形成间隙。所述牺牲层也能够是聚合物层，其中，所述聚合物层被利用氧气等离子体蚀刻工艺去除以形成间隙。

Thermal infrared radiation detector e.g. resistive type bolometer, for infrared imaging application, has sensitive material presented in form of wafer extending along direction perpendicular to plane in which substrate is inscribed

Detector has a sensitive material (2) presented entirely or partially in the form of a wafer extending along a direction perpendicular to a plane in which a substrate (1) ensuring a support function is inscribed. The material is maintained suspended by an electromagnetic radiation absorber (3) above the substrate. The absorber is integrated to the sensitive material at the level of an upper zone of the wafer. The absorber is suspended by an electrical conductor fixing unit (5) that is electrically and mechanically connected to the substrate.

MICRO-ENCAPSULATION THERMAL DETECTOR.

INFRARED DETECTOR BASED ON SUSPENDED BOLOMETRIC MICRO-PLANKS

The detector has a matrix of bolometric micro plates (14) suspended above a substrate (16) by a thermal insulation and support arm (18) for detecting radiation. A metallic focusing membrane (22) is placed above and around each micro-plate, and openings i.e. slots (26), are formed on the membrane. The openings of the membrane are placed periodically along a predetermined axis according to period less than or equal to ratio of wavelength of range of wavelengths to be detected and average refractive index of medium separating the micro-plate and the membrane.

Uncooled microbolometer and preparation method thereof

本发明公开了一种非制冷微测辐射热计，包括用于非制冷探测器的微测辐射热计微桥结构，该微桥结构中的热敏电阻材料和光吸收材料为氧化钒-碳纳米管复合膜，该氧化钒-碳纳米管复合膜是由一维碳纳米管和两维氧化钒薄膜复合而成，另该微桥结构为三层夹心结构：最底层是非晶氮化硅薄膜，作为微桥的支撑与绝缘材料；中间层是一层或者多层氧化钒-碳纳米管复合膜，作为微测辐射热计的热敏感层和光吸收层；表层是另外一层非晶氮化硅薄膜，作为热敏薄膜的钝化层以及应力的调控层。该微测辐射热计及其制备方法能克服现有技术中所存在的缺陷，提高了器件的工作性能，降低了原料成本，适宜大规模产业化生产。

SENSOR FOR THERMAL PATTERNS WITH BOLOMETERS UNDER CAPSULE (S).

L'invention concerne un capteur (100) de motifs thermiques d'un objet, de type capteur d'empreinte papillaire, comprenant une surface de contact (171) pour y appliquer l'objet. Le capteur comprend : - au moins une capsule (150) scellée sous vide, disposée entre un substrat (130) et la surface de contact, adaptée à échanger de la chaleur avec l'objet et à émettre un rayonnement électromagnétique fonction de sa température ; - à l'intérieur de chaque capsule (150), au moins une planche bolométrique (110), pour convertir en chaleur un rayonnement électromagnétique incident ; - au moins un filtre optique (160), pour arrêter un rayonnement électromagnétique dans l'infra-rouge, chaque filtre optique s'étendant au-dessus d'au moins une capsule et chaque capsule étant recouverte par un filtre optique ; et - des moyens de lecture (140) des résistances électriques des planches bolométriques (110). Un tel capteur d'empreinte offre à la fois une bonne isolation entre le substrat et les éléments sensibles, et une bonne tenue mécanique. The invention relates to a sensor (100) of thermal patterns of an object, of the papillary impression sensor type, comprising a contact surface (171) for applying the object. The sensor comprises: at least one vacuum-sealed capsule (150) disposed between a substrate (130) and the contact surface, adapted to exchange heat with the object and emit electromagnetic radiation depending on its temperature; within each capsule (150), at least one bolometric plate (110) for converting into heat incident electromagnetic radiation; at least one optical filter (160) for stopping electromagnetic radiation in the infra-red, each optical filter extending over at least one capsule and each capsule being covered by an optical filter; and - reading means (140) of the electrical resistances of the bolometric plates (110). Such a cavity sensor offers both good insulation between the substrate and the sensitive elements, and ...

TWO-DIMENSIONAL TERAHERTZ RADIATION DETECTOR

Un détecteur (10) bidimensionnel de rayonnement Térahertz comprend un élément de conversion spectrale, une matrice (4) de microlentilles et un capteur d’image (5) matriciel. Un tel détecteur peut être particulièrement compact, léger et peu onéreux. Pour certains modes de réalisation, il peut être utilisé pour produire des images multispectrales d’une scène externe, à partir de rayonnement Térahertz qui provient de ladite scène.Figure d’abrégé : Figure 1 A two-dimensional terahertz radiation detector (10) comprises a spectral conversion element, an array (4) of microlenses and an image sensor (5) array. Such a detector can be particularly compact, light and inexpensive. For some embodiments, it can be used to produce multispectral images of an external scene, from terahertz radiation that comes from said scene.Abstract Figure: Figure 1

METHOD FOR MANUFACTURING A BOLOMETRIC DETECTOR

DEVICE FOR DETECTING INFRARED RADIATION WITH BOLOMETRIC DETECTORS

Ce dispositif de détection de rayonnement infrarouge comprenad une matrice à une ou deux dimensions de détecteurs bolométriques élémentaires, connectés électriquement à un circuit de lecture (1), et associée à une structure de compensation destinée à dériver la majeure partie du courant électrique de fond ou de mode commun traversant chacun des détecteurs bolométriques de la matrice.La structure de compensation est constituée d'une couche intégrant au moins un matériau bolométrique (8) s'étendant entre deux zones (3, 6, 7) de connexion électrique reliées au circuit de lecture (1).La couche intégrant le matériau bolométrique (8) constitutif de la structure de compensation est elle-même en contact thermique avec le substrat constitutif du circuit de lecture (1) en dehors des zones de connexion électrique (3, 6, 7). This infrared radiation detection device comprises a one- or two-dimensional array of elementary bolometric detectors, electrically connected to a read circuit (1), and associated with a compensation structure intended to derive the major part of the background electric current or common mode passing through each of the bolometric detectors of the array The compensation structure consists of a layer incorporating at least one bolometric material (8) extending between two electrical connection zones (3, 6, 7) connected to the circuit The layer incorporating the bolometric material (8) constituting the compensation structure is itself in thermal contact with the substrate constituting the reading circuit (1) outside the electrical connection zones (3, 6 , 7).

THERMAL RADIATION DETECTION SENSOR AND METHOD FOR MANUFACTURING SAME

Capteur à structure monolithique intégrée pour la détection de rayonnement thermique comportant un substrat de support (1), une cavité (8) et des éléments de capteurs (3) pour la détection du rayonnement thermique. Le rayonnement thermique incident (11) traverse le substrat de support (1) pour arriver sur l'élément de capteur (3). L'élément de capteur (3) est suspendu dans la cavité (8) par des suspensions (6, 13', 14') assurant également le branchement électrique des éléments de capteurs. L'invention concerne également le procédé de fabrication de ce capteur. Integrated monolithic structure sensor for thermal radiation detection comprising a support substrate (1), a cavity (8) and sensor elements (3) for the detection of thermal radiation. The incident thermal radiation (11) passes through the support substrate (1) to reach the sensor element (3). The sensor element (3) is suspended in the cavity (8) by suspensions (6, 13 ', 14') also providing the electrical connection of the sensor elements. The invention also relates to the method of manufacturing this sensor.