СПОСОБ ИЗГОТОВЛЕНИЯ УСТРОЙСТВА ДЛЯ ОБНАРУЖЕНИЯ ТЕПЛОВОГО ИЗЛУЧЕНИЯ, СОДЕРЖАЩЕГО АКТИВНЫЙ МИКРОБОЛОМЕТР И ПАССИВНЫЙ МИКРОБОЛОМЕТР

Изобретение относится к измерительной технике. Пассивный микроболометр (12) содержит отражающий экран (17) и подвешенную мембрану с функцией поглотителя излучения, термометр и электрическое соединение. Мембрана поддерживается, по меньшей мере, двумя элементами (15) крепления, установленными на опорной подложке (16). Отражающий экран (17) может быть выполнен на основе, по меньшей мере, одного слоя (18) металлического материала. Экран (17) расположен ниже мембраны в электрическом контакте с мембранным элементом (13) поглощения излучения. Технический результат - изготовление защитного экрана, интегрировано в процесс изготовления пассивного микроболометра. 2 н. и 1 з.п. ф-лы, 7 ил.

CMOS-Bolometer

Ein Verfahren für das Herstellen einer Halbleitereinrichtung beinhaltet das Bilden wenigstens einer Opferschicht auf einem Substrat während eines komplementären Metalloxid-Halbleiter-(CMOS-)Prozesses. Eine Absorberschicht wird auf der Oberfläche der wenigstens einen Opferschicht abgelagert. Ein Teilbereich der wenigstens einen Opferschicht unterhalb der Absorberschicht wird entfernt, um eine Lücke zu bilden, über welche ein Teilbereich der Absorberschicht aufgehängt ist. Die Opferschicht kann ein Oxid des CMOS-Prozesses sein, wobei das Oxid entfernt wird, um die Lücke zu bilden, wobei ein selektiver Wasserstoff-Fluorsäure-Dampf-Trockenätz-Freigabeprozess benutzt wird. Die Opferschicht kann auch eine Polymerschicht sein, wobei die Polymerschicht entfernt wird, um die Lücke zu bilden, wobei ein O2-Plasma-Ätzprozess benutzt wird.

Pyroelectric detector for converting infrared radiation into electrical output signal in e.g. gas analysis, has sensitive element that is three-dimensionally structured to achieve thermal reinforcement

The detector has a pyroelectric chip (1) and a low-noise signal processing unit that are accommodated in a sensor housing with an infrared-permeable window. The chip consists of a pyro electric material with upper and lower electrodes that form a radiation-sensitive element (2), which is three-dimensionally structured. The sensitive element includes uncovered surfaces forming electrical-passive volumes to electrical-active volumes in the material. The surface portion of the active volume is smaller than the surface portion of passive volume.

A detection system and a method of making a detection system

Optically transitioning thermal detector structures

Method for closing perforated membranes

Optoelectronic device

Optoelectronic device

DETECTION DEVICE FOR SUSPENDED BOLOMETRIC MEMBRANES WITH HIGH ABSORPTION PERFORMANCE AND SIGNAL-TO-NOISE RATIO

Dispositif de détection bolométrique comprenant un substrat comprenant un circuit de lecture; une matrice de détecteurs élémentaires comprenant chacun une membrane suspendue au-dessus du substrat et raccordée au circuit de lecture par au moins deux conducteurs électriques, ladite membrane comprenant deux électrodes électriquement conductrices respectivement raccordées aux deux conducteurs électriques, et un volume de matériau transducteur raccordant électriquement les deux électrodes, dans lequel le circuit de lecture est configuré pour appliquer un stimulus électrique entre les deux électrodes de la membrane et pour former un signal électrique en réponse à ladite application. Ledit volume comporte un volume d'un premier matériau transducteur raccordant électriquement les deux électrodes et un volume d'un second matériau transducteur raccordant électriquement les deux électrodes et logé dans l'enceinte, la résistivité électrique du second matériau étant inférieure à la résistivité électrique ...

UNCOOLED INFRARED DETECTOR AND METHODS FOR MANUFACTURING THE SAME

This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process.

ELECTROMAGNETIC RADIATION DETECTOR ENCAPSULATED BY THIN LAYER Transfer

PATTERN SENSOR PYROELECTRIC THERMAL CAPACITY

Bolometric detector production comprises use of sacrificial auxiliary layer to connect reading circuit to bolometric substrate of polycrystalline silicon to detect infrared radiation

Ce procédé pour la fabrication d'un détecteur bolométrique, consiste, à partir d'un circuit de lecture, notamment réalisé sur un substrat silicium (1) : - tout d'abord, à former une première couche auxiliaire sacrificielle (3) sur ledit substrat silicium, destinée à être ôtée par tout moyen connu après réalisation du détecteur afin de découpler thermiquement le circuit de lecture (1) du module de détection; - puis à former sur cette couche auxiliaire sacrificielle (3), entre autres une couche de matériau bolométrique en silicium amorphe (5), mais également des électrodes (6), destinées à envoyer des signaux électriques nécessaires au fonctionnement du bolomètres et à acheminer le signal résultant de la détection du rayonnement infra rouge par ledit bolomètre au niveau du circuit de lecture. On soumet la couche (5) de matériau bolométrique, constituée de silicium amorphe, à un rayonnement laser, destiné à le transformer en silicium polycristallin.

PIXEL OF BOLOMETER EQUIPS With a CONDENSER Of INTEGRATION MIM

DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION COMPRISING A SUSPENDED THREE-DIMENSIONAL STRUCTURE

THERMO-MECHANICAL INFRARED DETECTOR WITH OPTICAL READING

ELECTROMAGNETIC RADIATION DETECTOR

METHOD FOR PRODUCING AN INFRARED DETECTOR AND INFRARED DETECTOR THEREFOR

PATTERN SENSOR PYROELECTRIC THERMAL CAPACITY COMPRISING A SOL-GEL MATRIX AND METAL OXIDE PARTICLES

METHOD FOR PRODUCING AN INFRARED DETECTING DEVICE

Procédé de réalisation d'un dispositif de détection infrarouge (100), comportant la mise en œuvre des étapes de : - dépôt d'une couche d'arrêt de gravure (32) sur un circuit électronique de lecture réalisé sur et/ou dans un premier substrat semi-conducteur ; - dépôt d'une couche sacrificielle sur la couche d'arrêt de gravure, la couche sacrificielle comprenant un matériau minéral apte à être gravé sélectivement par rapport à la couche d'arrêt de gravure ; - réalisation, sur la couche sacrificielle, d'un détecteur thermique infrarouge (57) relié électriquement au circuit électronique de lecture par un via électriquement conducteur (30) réalisé à travers la couche sacrificielle ; - gravure d'une partie de la couche sacrificielle disposée entre le circuit électronique de lecture et le détecteur thermique infrarouge.

BOLOMETRIC DETECTION DEVICE USING MEMBRANE SUSPENDED HIGH ABSORPTION EFFICIENCY AND SIGNAL TO NOISE RATIO

Sensor for contact-free temperature measurement

Thermal infrared detector provided with shield for high fill factor

센서, 반도체 기판 및 반도체 기판의 제조 방법

... 본 발명에 따르면, 실리콘을 포함하는 베이스 기판과, 베이스 기판 상측에 설치된 시드체와, 시드체에 격자 정합 또는 의사 격자 정합하고, 광 또는 열을 흡수하여 캐리어를 생성하는 3-5족 화합물 반도체를 포함하는 광열 흡수체를 구비하고, 광열 흡수체가 광열 흡수체로 입사하는 입사광 또는 광열 흡수체에 가해지는 열에 따라서 전기 신호를 출력하는 센서가 제공된다. 또한, 실리콘을 포함하는 베이스 기판과, 베이스 기판의 상측에 형성되고, 베이스 기판의 표면을 노출하는 개구를 갖고, 결정 성장을 저해하는 저해체와, 개구의 내부에 설치된 시드체와, 시드체에 격자 정합 또는 의사 격자 정합하고, 광 또는 열을 흡수하여 캐리어를 생성하는 3-5족 화합물 반도체를 포함하는 광열 흡수체를 구비하는 반도체 기판이 제공된다.

Bolometer having absorber with pillar structure for thermal shorting

Semiconductor package and manufacturing method thereof

INFRARED DETECTING DEVICE

An infrared detecting device comprises a substrate and a thermal photo detecting element. The substrate has a concave portion and a frame portion located around the concave portion. The thermal photo detecting element has a leg portion and a detecting portion, and the leg portion is connected on the frame portion so that the detecting portion is located above the concave portion. Moreover, the thermal photo detecting element has a first electrode layer provided on the substrate, a detecting layer provided on the first electrode layer, and a second electrode layer provided on the detecting layer. The linear thermal expansion coefficient for the first electrode layer is greater than the linear thermal expansion coefficient for the substrate, and the linear thermal expansion coefficient for the substrate is greater than the linear thermal expansion coefficient for the detecting layer.

ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME

An electronic device comprises a cavity surrounded by a cavity wall and evacuated, a thin gettering film disposed in the cavity and having the function of adsorbing surrounding substance, and an activating section at least a part of which is disposed in the cavity and which has the function of activating the thin gettering film by heat generation.

Thermal detector, thermal detection device, and electronic instrument

A thermal detector includes a thermal detection element, a support member, and a fixing part supporting the support member. The support member mounts and supports the thermal detection element on a second side thereof with a first side thereof facing a cavity. The support member includes a first layer member disposed on the second side and having a residual stress in a first direction, and a second layer member laminated on the first layer member on the first side and having a residual stress in a second direction opposite to the first direction. A thermal conductance of the first layer member is less than a thermal conductance of the second layer member.

Infrared-sensitive conductive-polymer coating

This is a novel conductive-polymer optical coating for infrared detection and method of making the same. The system may comprise an integrated circuit substrate itself comprising a plurality of mesas and comprising via connections on an upper portion of each of the mesas. The system further comprises a plurality of backside electrical contacts bonded to the via connections, a plurality of infrared-sensitive pixels overlying the electrical contacts, and a conductive-polymer optical coating overlying and electrically connecting the pixels. A method of forming an embodiment of the present invention may comprise forming a conductive-polymer optical coating over a substrate, forming a contact metal on a backside of the substrate, and processing the contact metal, the substrate and the common electrode to form capacitor pixels of the contact metal, the substrate and the corresponding portion of the optical coating.

Radiation sensor device and method

A radiation sensor device including an integrated circuit chip including a radiation sensor on a surface of the integrated chip, one or more electrical connections configured to connect between an active surface of the integrated circuit chip and a lead frame, a cap attached to said integrated circuit chip spaced from and covering said radiation sensor, the cap having a transparent portion defining a primary lens transparent to the radiation to be sensed, a secondary lens disposed in a recess proximate and spaced from said primary lens transparent to the radiation to be sensed, and an air gap between said primary lens and said secondary lens.

Method for making an infrared detection device

An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in a first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector.

Electromagnetic wave detector, electromagnetic wave detector array, and gas analyzing apparatus

An electromagnetic wave detector that selectively detects electromagnetic waves of wavelength λA includes a temperature detection unit that includes: a substrate including a cavity portion; a wavelength selection structure that generates a surface plasmon resonance with an electromagnetic wave of a predetermined wavelength λA for converting to heat and absorbing, and a detection film that detects the absorbed heat; and a support structure that retains the temperature detection unit above the cavity portion; wherein the support structure further includes a reflection structure that reflects the electromagnetic waves of the absorption wavelength of the support structure.

Microbolometer Semiconductor Material

A sensor for detecting intensity of radiation such as of infrared radiation includes an ROIC substrate (9) and a resistance element (1) arranged at a distance of the surface of the ROIC substrate. The resistance element comprises one more semiconducting layers such as a silicon semiconducting layer and a semiconducting layer of a silicon-germanium alloy forming a heterojunction. The semiconducting layer or layers can be doped with one or more impurity dopants, the doping level or levels selected so that the layer retains the basic crystallographic properties of the respective material such as those of monosilicon or a monocrystalline silicon-germanium alloy. The impurity dopants are selected from the elements in groups IE, IV, and V, in particular among boron, aluminium, indium, arsenic, phosphorous, antimony, germanium, carbon and tin. The doping can be abrupt so that there is an interior layer inside said semiconducting layer or layers having a significantly higher doping level.

Chemically-selective detector and methods relating thereto

In accordance with certain embodiments of the present disclosure, a method for adjusting the spectral detectivity of a thermal detector is described. The method includes coating the light sensitive portion of a thermal detector with a first material to reduce the response of the detector. The first material is coated with a second material that is thermally thin and has spectral absorption characteristics. The second material is coated with a third material that is thermally thick, whereby the spectral absorbance of the second material as filtered by the third material primarily determines the thermal conversion of the thermal detector.

Radiation detector and method for manufacturing a radiation detector

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate.

INFRARED SENSOR AND CIRCUIT SUBSTRATE EQUIPPED THEREWITH

Provided is an infrared sensor wherein a large temperature difference can arise between the two temperature sensor devices for detection of infrared rays and for temperature compensation; minimization of the size thereof is easily possible; and the cost of the structure thereof is low. The infrared sensor comprises: an electrical insulating film sheet 2; first temperature sensor device 3A and second temperature sensor device 3B which are provided on one side face of the electrical insulating film sheet 2, and are located at a distance from each other; first foil conductor patterns 4A which are formed on one side face of the electrical insulating film sheet 2, and are connected to the first temperature sensor device 3A; second foil conductor patterns 4B which are formed on the one side face of the electrical insulating film sheet 2, and are connected to the second temperature sensor device 3B; and an infrared reflector film 6 which is provided on the other side face of the electrical insulating ...

RADIATION SENSOR DEVICE AND METHOD FOR FORMING SAID DEVICE

METHOD FOR DETERMINING A TEMPERATURE WITHOUT CONTACT, AND INFRARED MEASURING SYSTEM

ДЕТЕКТИРУЮЩАЯ СТРУКТУРА ТИПА БОЛОМЕТРА ДЛЯ ОБНАРУЖЕНИЯ ЭЛЕКТРОМАГНИТНОГО ИЗЛУЧЕНИЯ И СПОСОБ ИЗГОТОВЛЕНИЯ ТАКОЙ СТРУКТУРЫ

Детектирующая структура (10) типа болометра для обнаружения электромагнитного излучения. Детектирующая структура (10) содержит транзистор (100) типа MOSFET, связанный с первым поглощающим элементом для обнаружения повышения температуры указанного поглощающего элемента при поглощении электромагнитного излучения. Транзистор (100) содержит по меньшей мере одну первую и по меньшей мере одну вторую зоны (111, 112), по меньшей мере одну третью зону (113), отделяющую первую и вторую зоны (111, 112) одну от другой, и по меньшей мере один первый электрод (120) затвора, выполненный с возможностью смещения третьей зоны (113). Первый электрод (120) затвора содержит по меньшей мере один первый металлический участок, образующий первый поглощающий элемент. Первый металлический участок имеет толщину Ер, удовлетворяющую следующему неравенству:. Объектом изобретения является также способ изготовления такой структуры. 2 н. и 15 з.п. ф-лы, 6 ил.

ЭЛЕКТРОННОЕ ДЕТЕКТИРУЮЩЕЕ УСТРОЙСТВО И ДЕТЕКТОР, СОДЕРЖАЩИЙ ТАКОЕ УСТРОЙСТВО

... 1. Электронное детектирующее устройство, содержащее подложку (1; 301; 401) и по меньшей мере одну микроструктуру, указанная микроструктура содержит мембрану (9; 309; 409) и по меньшей мере один удлиненный удерживающий элемент (21, 22), указанная мембрана расположена, по существу, напротив указанной подложки (1; 301; 401) и на расстоянии от нее и механически прикреплена и электрически соединена с указанным удлиненным удерживающим элементом, который механически и электрически соединен с подложкой (1; 301; 401) посредством по меньшей мере одной опоры (5; 305; 405), отличающееся тем, что микроструктура также содержит по меньшей мере один элемент (10-13; 310; 313; 413; 413'; 420), имеющий полое сечение и проходящий по меньшей мере по одной из основных поверхностей указанной микроструктуры. 2. Электронное детектирующее устройство по п.1, отличающееся тем, что элемент жесткости идет в направлении, поперечном основной поверхности микроструктуры. 3. Электронное детектирующее устройство по п.1 или ...

ДЕТЕКТИРУЮЩАЯ СТРУКТУРА ТИПА БОЛОМЕТРА ДЛЯ ОБНАРУЖЕНИЯ ЭЛЕКТРОМАГНИТНОГО ИЗЛУЧЕНИЯ И СПОСОБ ИЗГОТОВЛЕНИЯ ТАКОЙ СТРУКТУРЫ

Mikrostrukturiertes Temperatursensorelement mit zusätzlicher IR-absorbierender Schicht

Verfahren zur Herstellung eines Sensorelements, umfassend die folgende Schichtenfolge: eine dotierte Halbleiterschicht (7') mit einer ihren Wert temperaturabhängig ändernden elektrischen Eigenschaft; eine dielektrische Schicht (12); und eine Passivierungsschicht (17), wobei auf der Passivierungsschicht (17) weiterhin eine aus der Gasphase abgeschiedene Schicht aus Infrarotstrahlung absorbierendem Material (21) angeordnet ist, umfassend die Schritte: a) Bereitstellen einer dotierten Halbleiterschicht (7') mit einer ihren Wert temperaturabhängig ändernden elektrischen Eigenschaft; b) Auftragen einer dielektrischen Schicht (12) auf die Halbleiterschicht; c) Auftragen einer Passivierungsschicht (17) auf die dielektrische Schicht; d) Auftragen einer Infrarotstrahlung absorbierenden Schicht (22) aus der Gasphase auf die Passivierungsschicht (17); e) Auftragen einer Maskierungsschicht (22) auf die Infrarotstrahlung absorbierende Schicht (21), wobei vorbestimmte Bereiche der Infrarotstrahlung absorbierenden ...

Infrarotsensor

Ein Infrarotsensor (3), der eine Infrarot Festkörperbilderfassungseinrichtung (100) ausbildet, beinhaltet einen Sensorelementteil (10), angeordnet in einem Gehäuse (11). In dem Sensorelementteil (10) ist eine Absorptionsstruktur (22), die auf einem Substrat (20) abgestützt angeordnet. Die Absorptionsstruktur (22) hat eine Struktur, in der eine zweite Isolierschicht (32), eine Absorptionsschicht (30), und eine erste Isolierschicht (31) auf einer Reflexionsschicht (33) aufgestapelt sind. Die erste Isolierschicht (31) und die zweite Isolierschicht (32) sind so ausgestaltet, eine Schichtdicke zu haben, mit welcher der Absorptionsindex der Infrarotstrahlung (40), die in die Absorptionsstruktur (22) eindringt, maximiert wird in Hinblick auf den Energieverlust in einer optischen Übertragungsstrecke zu der Absorptionsstruktur (22).

Optically transitioning thermal detector structures

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.

Infrared thermal sensor with beams having different widths

An infrared thermal sensor or pixel 10 for detecting infrared radiation is described. It comprises a substrate (1, Fig.2) and a cap structure (2, Fig.2) together forming a sealed cavity 3. A membrane or diaphragm 4 is suspended therein by a plurality of beams or webs 5a, 5b, 5c, each beam comprising at least one thermocouple (6, Fig. 2) arranged therein or thereon for measuring a temperature difference (ΔT) between the membrane and the substrate. At least two beams have a different length La, Lb and each of the thermocouples have a substantially same constant width Wa, Wb to length La, Lb ratio such that the thermal resistance measured between the membrane and the substrate is substantially constant for each beam 5a, 5b, 5c, and such that the electrical resistance measured between the membrane and the substrate is substantially constant for each beam. The filling factor of the membrane (4, Fig. 2) may be less than 50%. The membrane may be substantially circular or rectangular in cross ...

RADIATION ABSORBER

PROCEDURE FOR THE PRODUCTION OF A HOUSING-SEALING WINDOW ELEMENT

SENSOR FOR CONTACTLESS MEASURING OF A TEMPERATURE

Infrared radiation detector having a reduced active area

INFRARED RAY SENSOR AND METHOD OF MANUFACTURING THE SAME

Disclosed is an infrared ray sensor and a method of manufacturing the same. The infrared ray sensor includes a sensor substrate formed of an infrared ray transmitting material and having a first surface and a second surface which is in opposed relation to the first surface, an infrared ray reflecting film provided on the first surface of the sensor substrate, infrared ray detecting elements provided on the second surface of the sensor substrate, and an infrared ray transmitting window formed in the infrared ray reflecting film in relation to the infrare ray detecting elements. The infrared ray which enters the infrared ray transmitting window portion passes through the sensor substrate and is then made incident on the infrared ray detecting elements. Bridges are formed on the second surface of the sensor substrate. Each of the bridges is a silicon oxynitride film having a single layer configuration.

Infrared detection device

A pyroelectric-type photo-detector and method of manufacture, thermoelectric light detection device and electronic apparatus

METHOD FOR PRODUCING AN INFRARED DETECTOR AND INFRARED DETECTOR THEREFOR

METHOD FOR MAKING A DEVICE FOR DETECTION OF ELECTROMAGNETIC RADIATION COMPRISING A LAYER OF A GETTER MATERIAL

ELECTROMAGNETIC RADIATION DETECTOR, ENCAPSULATED BY THIN LAYER TRANSFER.

ELECTROMAGNETIC RADIATION DETECTOR, ENCAPSULATED BY THIN LAYER TRANSFER.

L'invention concerne un détecteur de rayonnement électromagnétique comportant : au moins une membrane (108) suspendue au-dessus d'un substrat (101) ; et un capot (110), fermant une cavité hermétique (115) recevant l'au moins une membrane. Selon l'invention : - le capot (110) présente une épaisseur (E) inférieure ou égale à 10 µm ; le capot est en appui au moins sur des parois de soutien (106) encadrant la ou les membrane(s) ; et - le détecteur présente des première et des seconde couches de scellement (112A, 112B), métalliques, intercalées l'une sur l'autre entre le capot et les parois de soutien, et entre lesquelles s'étend une zone périphérique de collage (112C). L'invention concerne également un procédé de fabrication d'un tel détecteur. L'invention offre une solution d'encapsulation par un capot fin, dans laquelle les membranes ne sont pas soumises à des températures élevées.

Electromagnetic radiation e.g. infrared radiation, thermal detection device, has elementary detectors with thermal insulation arm comprising support end on support, where arm is arranged below membranes of other detectors

Le dispositif de détection thermique de rayonnement électromagnétique comporte une pluralité de détecteurs élémentaires (1a, 1b, 1c), juxtaposés de manière à constituer une matrice. Chaque détecteur élémentaire comporte une membrane (2a, 2b, 2c), sensible au rayonnement, maintenue en suspension sur un support par l'intermédiaire d'éléments de maintien (11), qui isolent thermiquement la membrane du support. Une extrémité d'appui sur le support d'au moins un élément de maintien (11) de chaque détecteur élémentaire est disposée (B) au-dessous de la membrane (2) d'un autre détecteur élémentaire. Les éléments de maintien sont, de préférence, constitués par des bras d'isolation thermique sensiblement linéaires. Chaque élément de maintien (11) a une zone centrale de liaison avec la membrane correspondante pour assurer une liaison électrique au niveau d'un point d'appui (C). Cette zone centrale de liaison peut être constituée par une déformation du bras ou par un plot de liaison électriquement ...

COMPONENT FOR DETECTION OF ELECTROMAGNETIC RADIATION IN A WAVELENGTH RANGE AND METHOD OF MANUFACTURING SUCH A COMPONENT

L'invention concerne un composant (1) destiné à la détection et/ou la mesure d'un rayonnement électromagnétique dans une première gamme de longueurs d'onde. Le composant (1) comporte un support (10) comportant au moins une première structure (111, 112) et une face de réception (121) pour recevoir le rayonnement électromagnétique ; un filtre optique (20) du type passe bande dans la première gamme de longueurs d'onde disposé sur la face de réception (121) du support (10). Le filtre optique (20) comporte une zone d'adaptation (220) recouvrant la face de réception (121) du support (10) et d'indice de réfraction inférieur à 2 ; une première couche métallique (230) recouvrant la zone d'adaptation (220) et comprenant des trous traversants (231) régulièrement répartis. Chacun des trous traversants (231) contient un matériau de remplissage (232). Le filtre optique (20) comprend en outre une deuxième couche métallique (260), ladite deuxième couche métallique (260) comprenant des deuxièmes trous traversants ...

PYROELECTRIC INFRARED DETECTING DEVICE, AND METHOD FOR REPLACING PYROELECTRIC ELEMENT IN PYROELECTRIC INFRARED DETECTING DEVICE

SURFACE MICRO-MACHINED INFRARED SENSOR USING INTERFEROMETRIC ABSORBER WITH HIGH TEMPERATURE STABILITY

A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having front and rear surfaces. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, and the thin-film absorber is substantially parallel to the reflector. According to an embodiment of the present invention, wafer bonding technology is simplified to allow a high temperature process after making the reflector. COPYRIGHT KIPO 2016 (210) Rule of a CMOS transistor (220) Injection of a reflecting material (230) Forming polysilicon of a thermophile(TP) (240) Depositing a metal contact part for TP and MOS and a thin film absorber (250) SiO_2 passivation (260) Release step and a second metal contact part ...

INFRARED DETECTOR ARRAY AND PRODUCTION METHOD THEREFOR

An infrared detector array wherein infrared detectors are arranged in a high density and each detector has a low thermal capacity. An insulating film (2) is disposed on the surface of a silicon substrate having a (100)-plane as its upper surface, and right-angled triangle portions at four corners of matrix-like right-angled quadrilaterals encompassed by two parallel straight lines portions of two sets crossing orthogonally each other on the insulating film (2) are etched to form openings. The silicon substrate is anisotropically etched through the openings in such a manner as to form pyramidal cavities (3) in the silicon substrate below the insulating film (2). The infrared detectors are then disposed on the insulating film.

Light detector

A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, and in which a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend.

ENHANCED LATERAL CAVITY ETCH

A cavity is formed in a semiconductor substrate wherein the width of the cavity is greater than the depth of the cavity and wherein the depth of the cavity is non uniform across the width of the cavity. The cavity may be formed under an electronic device in the semiconductor substrate. The cavity is formed in the substrate by performing a first cavity etch followed by repeated cycles of polymer deposition, cavity etch, and polymer removal.

SUBSTRATE HAVING A HOLE, METHOD FOR MANUFACTURING THE SUBSTRATE, INFRARED SENSOR, AND METHOD FOR MANUFACTURING THE INFRARED SENSOR

A resist mask having penetrating holes is formed on a rear surface of a silicon substrate A planar shape of each penetrating hole is formed to a shape with which its respective sides are curved to inwardly convex arcuate shapes with respect to a regular quadrilateral that is a target shape of a transverse section at a processing ending end side of a corresponding cavity Next, dry etching is applied to the silicon substrate The cavities are thereby formed in the silicon substrate As the etching progresses, a transverse sectional shape of each cavity decreases in inward projection amounts of the respective arcuate shaped sides in the transverse sectional shape of the corresponding penetrating hole of the resist mask At a processing ending end side of the cavity its planar shape is substantially the same shape as the regular quadrilateral that is the target shape. 1. A substrate having a hole , the substrate having the hole being such thata transverse sectional shape of a processing starting end side of the hole is a shape with which respective sides of a predetermined polygon are formed to inwardly convex arcuate shapes anda transverse sectional shape of a processing ending end side of the hole is a shape closer to the predetermined polygon in comparison to the transverse sectional shape of the processing starting end side of the hole.2. The substrate having the hole according to claim 1 , wherein the predetermined polygon is a quadrilateral.3. The substrate having the hole according to claim 1 , wherein the predetermined polygon is a triangle.4. An infrared sensor comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the substrate having the hole according to ;'}a heat insulating film held by the substrate so as to face the hole; anda pyroelectric element formed above the heat insulating film.5. The infrared sensor according to claim 4 , wherein the pyroelectric element includes a lower electrode formed at a surface of the heat insulating film at an opposite ...

BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL

Provided are a bolometer structure, an infrared detection pixel employing the bolometer structure, and a method of fabricating the infrared detection pixel. The infrared detection pixel includes a substrate including a read-out integrated circuit (ROIC) and on which a reflection layer for reflecting infrared light is stacked, a bolometer structure formed to be spaced apart from the substrate and including a temperature-sensitive resistive layer, a first metal layer formed in a pattern on one surface of the temperature-sensitive resistive layer, a second metal layer formed in a pattern complementary to the pattern of the first metal layer on the other surface of the temperature-sensitive resistive layer in order to complementarily absorb infrared light, and an insulating layer formed between the temperature-sensitive resistive layer and the first metal layer, and a metal pad receiving a change in resistance of the temperature-sensitive resistive layer according to infrared light absorbed ...

Infrared detector with reduced optical signature

Absorption coatings utilized in a detector array reduces the optical signature of an infrared detector or detector array by reducing the undesirable reflections from exposed metal surfaces and non-planar surface features within the photodetector array. The application of an absorption coating, consisting of a single layer black coating, a multi-layer dark coating, a moth-eye surface structure, or a combination of these, reduces the undesired reflected radiation for a relevant spectral range. Accordingly, the optical signature of the detector array is reduced and the problems of optical cross-talk and ghost images are eliminated.

Optoelectronic device

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.

THERMAL INFRARED SENSOR AND MANUFACTURING METHOD THEREOF

A thermal infrared sensor includes an infrared ray absorbing film that is thermally separated from a semiconductor substrate by a hollow part; and a temperature sensor configured to detect temperature changes of the infrared ray absorbing film. The infrared ray absorbing film includes an infrared ray antireflection structure configured with a sub wavelength structure, the infrared ray antireflection structure being provided on a surface of the infrared ray absorbing film facing the semiconductor substrate.

Thermoelectric-based Infrared Detector having a Cavity and a MEMS Structure Defined by BEOL Metals Lines

Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

BOLOMETER AND MANUFACTURING METHOD OF TEMPERATURE SENSING UNIT

The present disclosure provides a bolometer including a substrate, a reflecting mirror on the substrate, and a temperature sensing unit above the reflecting mirror. The temperature sensing unit includes a first insulating layer, a thermistor on the first insulating layer, a second insulating layer on the thermistor, an electrode layer in the second insulating layer and right above the thermistor, and a metal meta-surface in the second insulating layer and right above the electrode layer. The electrode layer includes a plurality of electrodes separated from each other. A projection region of the metal meta-surface on the thermistor is equal to or larger than the thermistor.

Sensor for contactless measuring of a temperature

Non-contacting, membrane thermopile sensor, for temperature measurement, has side walls sloping steeply with respect to membrane The sensor has sidewalls (15) that slope at 80-100 degrees relative to the membrane. An Independent claim is included for the manufacture.

INFRARED RAY DETECTOR

PURPOSE: To obtain a low-cost detector which shuts off infrared rays of ≤7μm wavelengths and senses infrared rays of a 7W16μm wavelength range by using an indium-antimony layer of ≥0.1μm thickness as a filter. CONSTITUTION: A filter consisting of indium and antimony of ≥1μm thickness is mounted to an infrared ray take-in window part provided to a container containing a pyroelectric pellet generating electric charge corresponding to the rate of change in incident infrared rays. For example, front and rear surface electrodes 10, 11 are mounted to a pyroelectric pellet 9 consisting of lithium tantalate or the like, and the pellet is mounted to a metal-made support base 12 by using a conductive adhesive material 13. Next, the entire part is put in a container 19, and a silicon single crystal plate 21 is mounted to an infrared ray take-in window 20 of the container. Further, a filter 22 made of an indium-antimony film vapor deposited to ≥0.1μm thickness is attached to the inside surface thereof ...

熱型光検出器、熱型光検出装置及び電子機器

懸架式ボロメータマイクロプレートに基づく赤外線検出器

Pyroelektrischer Infrarotsensor

STRAHLUNGSDETEKTOR UND VERFAHREN ZUR HERSTELLUNG EINES STRAHLUNGSDETEKTORS

Es wird ein Strahlungsdetektor mit einem Substrat und einer Membran, die über Abstandshalter oberhalb des Substrats aufgehängt ist beschrieben, wobei die Abstandshalter einen in der Membran gebildeten Strahlungssensor elektrisch kontaktieren sowie die Membran gegenüber dem Substrat thermisch isolieren.

Elektronische Erfassungsvorrichtung und diese Vorrichtung umfassender Sensor

Infrarotsensor.

Design and fabrication method for microsensor

Method for closing perforated membranes

Radiation detector comprising a compensating sensor

Infrared thermal sensor with good SNR

ELECTRONIC COLLECTION DEVICE AND THIS DEVICE COMPREHENSIVE SENSOR

FULLY-COHERENT TERAHERTZ DETECTION METHOD AND SYSTEM

A method and a system for terahertz detection, using at least a first and a second electrodes separated by a centro-symmetric material. The system comprises at least a first and a second electrodes with conductive pads for connection to a voltage source, separated by a centro-symmetric material; the method comprising second harmonic generation in the centro-symmetric material by overlapping of a probe and a terahertz beams.

Device for allowing electrical interconnection of superconducting materials between cold detection circuit and read-out circuit of bolometer, has stack including layers made of conducting materials and formed perpendicularly with trajectory

Ce dispositif comprend un premier circuit électronique (1) connecté à un second circuit électronique (2) à l'aide d'au moins une interconnexion électrique (8) définissant un trajet des électrons entre lesdits circuits. La ou chaque interconnexion électrique (8) comporte au moins un empilement formant miroir à phonons, ledit empilement comprenant au moins deux couches (3, 4) de matériaux conducteurs différents, chaque empilement étant réalisé perpendiculairement audit trajet d'électrons, et au moins l'une des couches de chaque empilement étant constituée d'un matériau supraconducteur.

ELECTRONIC DEVICE OF DETECTION AND DETECTOR INCLUDING/UNDERSTANDING SUCH A DEVICE

MICROBOLOMETRES RESISTANT TO THE TEMPERATURES OF HIGH SCENES.

La présente invention concerne un microbolomètre comportant une partie suspendue (2) contenant un élément sensible aux rayonnements et constituée d'un ensemble de premières zones (2A) et d'un ensemble de secondes zones (2B), les deux ensembles étant superposés; de plus, les matériaux constituant lesdites zones (2A) et (2B) possèdent des coefficients de dilatation thermique suffisamment différents pour que ladite partie suspendue (2) se déforme sous l'effet d'une élévation de température au point de venir au contact du substrat (1) lorsque la zone de contact atteint une température Tc inférieure à la température de destruction Td du microbolomètre. Application à des détecteurs de rayonnement comprenant un ensemble de tels microbolomètres, et à divers appareils comprenant au moins un tel détecteur de rayonnement.

METHOD FOR MAKING A DEVICE FOR DETECTION OF ELECTROMAGNETIC RADIATION COMPRISING A LAYER OF A GETTER MATERIAL

L'invention porte sur un procédé de réalisation d'un dispositif de détection (1) de rayonnement électromagnétique comprenant au moins un détecteur thermique (10) à membrane absorbante (11) suspendue au-dessus d'un substrat (2), situé dans une cavité hermétique (3), comportant les étapes suivantes : - dépôt, sur le substrat (2), d'une couche métallique dite getter (40) comprenant un matériau métallique à effet getter ; - dépôt d'une couche sacrificielle dite carbonée (50) sur la couche métallique getter (40); - dépôt d'au moins une couche sacrificielle minérale (60A, 60B) sur la couche sacrificielle carbonée (50) ; - réalisation du détecteur thermique (10) de sorte que la membrane absorbante (11) est réalisée sur la couche sacrificielle minérale (60A) ; - suppression de la couche sacrificielle minérale (60A, 60B) ; - suppression de la couche sacrificielle carbonée (50).

METHOD FOR MAKING AN ELECTROMAGNETIC RADIATION DETECTOR HAS MICROENCAPSULATION

Un procédé de fabrication d'un détecteur apte à détecter une gamme de longueurs d'onde [λ8 ; λ14] centrée sur une longueur d'onde λ10, le détecteur comprenant un dispositif de détection apte à détecter ladite gamme [λ8 ; λ14] et un boitier hermétique sous une pression prédéterminée dans laquelle est logé ledit dispositif, ledit boitier étant formé d'un substrat, de parois latérales solidaires du substrat et d'un capot supérieur solidaire des parois latérales et comprenant une partie au droit du dispositif qui est transparente dans ladite gamme [λ8 ; λ14], le procédé comprenant : - la réalisation dudit dispositif sur le substrat, ladite réalisation comprenant le dépôt d'une couche sacrificielle noyant totalement ledit dispositif ; - la réalisation du capot sur la couche sacrificielle, ledit capot étant constitué d'un empilement de première, seconde et troisième structures optiques transparentes dans ladite gamme [λ8 ; λ14], la seconde et la troisième structures optiques ayant des indices ...

THERMO-OPTICAL DETECTOR IN WHICH A THERMO-OPTICAL DETECTING ELEMENT IS FORMED ON A MEMBRANE, A THERMO-OPTICAL DETECTION SYSTEM, AND AN ELECTRONIC DEVICE

PURPOSE: A thermo-optical detector, a thermo-optical detection system, and an electronic device are provided to prevent the bending of a membrane in which a thermo-optical detecting element is installed by removing a sacrificial layer through isotropic etching in the final process. CONSTITUTION: A thermo-optical detector comprises a support member(210) and a fixing unit(100). The support member includes a first side facing a hollow portion(102) and a second side in which a thermo-optical detecting element is installed and supported. The fixing unit supports the support member. The support member comprises a first layer member(212) which is arranged on the second side and has residual stress of a first direction and a second layer member(214) which is laminated on the first layer member on the first side and has residual stress of a second direction opposed to the first direction. The thermal conductance of the first layer member is less than that of the second layer member. COPYRIGHT KIPO ...

INFRARED SENSOR AND MANUFACTURING METHOD THEREOF

PYROELECTRIC TYPE INFRARED SENSOR

적외선 기준 화소를 위한 장치 및 방법

... 기판과 플로팅 차단형 적외선 검출기 및/또는 션트 차단형 적외선 검출기를 포함하는 장치가 개시된다. 플로팅 차단형 적외선 검출기는 기판으로부터 열적으로 격리되어 접속된 적외선 검출기; 및 적외선 검출기 위에 배치되어 적외선 검출기가 외부의 열 방사선을 받는 것을 차단하는 차단 구조체를 포함할 수 있으며, 차단 구조체는 복수의 개구를 포함한다. 션트 차단형 적외선 검출기는 기판에 접속된 추가의 적외선 검출기; 적외선 검출기 위에 배치되어 추가의 적외선 검출기가 외부의 열 방사선을 받는 것을 차단하는 추가의 차단 구조체; 및 추가의 적외선 검출기를 기판 및 추가의 차단 구조체에 열적으로 접속하는 재료를 포함할 수 있다. 상기 장치를 사용하고 형성하는 방법이 또한 개시된다.

Thermal infrared detector and infrared image sensor using the same

The present invention provides a thermal infrared detector whose sensitivity will not decrease even if the frame rate is increased, and will not result in the thermal damage caused by the heat generated by itself; and an infrared image sensor using the same. The heat-sensing infrared camera device of the present invention has an infrared absorption layer 42; and a detection part X(i, j) of heat-electricity conversion part 41 to convert the heat generated by the infrared absorption layer 42 into electrical signal, as the main part of the pixel. Plural detection parts X(i, j) are thermally insulated, and arranged on the base body (1, 2, 4). Mechanical switching devices M(i, j) are disposed between the supporting base body (1, 2, 4) and plural detection parts X(i, j) respectively. During the blanking time else than the time to read the electrical signal of the detection part X(i, j), the detection part X(i, j) is thermally short-circuited to the base body (1, 2, 4), so that the heat stored ...

OPTICALLY TRANSITIONING THERMAL DETECTOR STRUCTURES

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.

INFRARED DETECTION DEVICE

An infrared detection device comprises a substrate and a thermal photodetection element. The substrate comprises a recessed portion, and a frame portion located around the recessed portion. The thermal photodetection element comprises a leg portion and a detection portion, and the leg portion is connected onto the frame portion such that the detection portion is located on the recessed portion. Further, the thermal photodetection element comprises an intermediate layer provided on the substrate, a first electrode layer provided on the intermediate layer, a detection layer provided on the first electrode layer, and a second electrode layer provided on the detection layer. The linear thermal expansion coefficient of the substrate is larger than the linear thermal expansion coefficient of the detection layer, and the linear thermal expansion coefficient of the intermediate layer becomes smaller from the substrate toward the first electrode layer.

THERMO-OPTIC INFRARED PIXEL AND FOCAL PLANE ARRAY

A surface plasmon polariton (SPP) pixel structure is provided. The SPP pixel structure includes a coupling structure that couples the probing light into the SPP mode by matching the in-plane wave vector by changing the refractive index of the coupling structure using thermo-optic effects to vary the coupling strength of the probing light into the SPP mode. An absorber layer is positioned on the coupling structure for absorbing incident infrared/thermal radiation being detected.

Pyroelectric detector, pyroelectric detection device, and electronic instrument

A pyroelectric detector includes a substrate, a support member and a pyroelectric detection element, which includes a capacitor, first and second reducing gas barrier layers, an insulating layer, a plug and a second electrode wiring layer. The first reducing gas barrier layer covers at least a second electrode and a pyroelectric body of the capacitor, and has a first opening that overlaps the second electrode in plan view. The insulating layer covers at least the first reducing gas barrier layer, and has a second opening that overlaps the first opening in plan view. The plug is disposed in the first and second openings and connected to the second electrode. The second electrode wiring layer is formed on the insulating layer and connected to the plug. The second reducing gas barrier layer is formed on the insulating layer and the second electrode wiring layer and covers at least the plug.

Infrared imaging element

An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

Mems sensor

A MEMS sensor has a frame portion 2 formed in a rectangular frame shape and a convexoconcave shaped membrane 3 that is constructed within the frame portion 2, the convexoconcave shape of the membrane 3 extend to two direction where a concave and a convex are orthogonal to each other, and square concave portions 3 a and square convex portions 3 b are disposed in a web shape within a whole in-plane area of the membrane 3.

Novel Microbolometer and Pixel Exploiting Avalanche Breakdown

A novel detector apparatus and detection method for measuring temperature exploit the avalanche transition edge, and are useful for contact and remote sensing & imaging and microbolometry of thermal, THz, LWIR/MWIR/SWIR/NIR, and visible light. The invention allows uncooled operation at kHz frame rates.

Infrared ray detection element and infrared ray detection device having the same

An infrared ray detection element has a plurality of pyroelectric layers that are laminated in a same direction as an incident direction of infrared rays, one or more intermediate electrode layers laminated between the plurality of pyroelectric layers; a front side electrode layer that is laminated on a front side of the pyroelectric layer positioned at a top side; and a back side electrode layer that is laminated on a back side of the pyroelectric layer positioned at a bottom side. The two pyroelectric layers adjacent in a front and back direction are performed with a polarization process such that polarization directions thereof are set to reverse directions to each other.

Manufacturing method for electronic device and electronic device manufacturing apparatus

An electronic device manufacturing apparatus is disclosed. The electronic device manufacturing apparatus includes a vacuum chamber, a support part, a moving part, and a heating part. The support part is located in the vacuum chamber and has a first placement surface on which a first member is to be placed. The moving part is located in the vacuum chamber and has a second placement surface on which a second member is to be placed. The moving part is movable between a first position where the first placement surface and the second placement surface do not face each other when seen in plan view and a second position where the first placement surface and the second placement surface face each other when seen in plan view. The heating part heats the first member and the second member.

Thermal Sensor Having a Coupling Layer, and a Thermal Imaging System Including the Same

A thermal sensor includes a first semi-transparent electrode; a second electrode; a thermally sensitive element positioned between the first and second electrodes; and a coupling layer positioned between the first electrode and the thermally sensitive element, wherein the thermally sensitive element is in electrical communication with the first electrode via the coupling layer and is in electrical communication with the second electrode. An optional second coupling layer may be positioned between the second electrode and the thermally sensitive element, wherein the thermally sensitive element is in electrical communication with the second electrode via the second coupling layer.

Pyroelectric detector and method for manufacturing same, pyroelectric detection device, and electronic instrument

A pyroelectric detector includes a pyroelectric detection element, a support member, a fixing part and a first reducing gas barrier layer. A first side of the support member faces a cavity and the pyroelectric detection element is mounted and supported on a second side opposite from the first side. An opening part communicated with the cavity is formed on a periphery of the support member in plan view from the second side of the support member. The fixing part supports the support member. The first reducing gas barrier layer covers a first surface of the support member on the first side, a side surface of the support member facing the opening part, and a part of a second surface of the support member on the second side and the pyroelectric detection element exposed as viewed from the second side of the support member.

THERMAL DETECTOR, THERMAL DETECTION DEVICE, ELECTRONIC INSTRUMENT, AND THERMAL DETECTOR MANUFACTURING METHOD

A thermal detector manufacturing method includes: forming a sacrificial layer on a structure including an insulating layer; forming a support member on the sacrificial layer; forming on the support member a heat-detecting element; forming a first light-absorbing layer so as to cover the heat-detecting element, and planarizing the first light-absorbing layer; forming a contact hole in a portion of the first light-absorbing layer, subsequently forming a thermal transfer member having a connecting portion that connects to the heat-detecting element and a thermal collecting portion having a surface area greater than that of the connecting portion as seen in plan view; forming a second light-absorbing layer on the first light-absorbing layer; and removing the sacrificial layer to form a cavity between the support member and the structure including the insulating layer formed on the surface of the substrate. 1. A thermal detector manufacturing method comprising:forming a structure including an insulating layer on a surface of a substrate;forming a sacrificial layer on the structure including the insulating layer;forming a support member on the sacrificial layer;forming on the support member a heat-detecting element having a structure in which a pyroelectric material layer is disposed between a lower electrode and an upper electrode, the lower electrode having an extending portion extending around the pyroelectric material layer as seen in plan view, and the extending portion having light-reflecting properties by which arriving light is reflected;forming a first light-absorbing layer so as to cover the heat-detecting element, and planarizing the first light-absorbing layer;forming a contact hole in a portion of the first light-absorbing layer, subsequently forming a material layer which is thermally conductive and optically transmissive at least with respect to light of a prescribed wavelength, and patterning the material layer to form a thermal transfer member having a ...

Serpentine ir sensor

In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror.

Integrated diode array and corresponding manufacturing method

An integrated diode array and a corresponding manufacturing method are provided. The integrated diode array includes a substrate having an upper side, and a plurality of blocks of several diodes, which are positioned in a planar manner and are suspended at the substrate above a cavity situated below them in the substrate. The blocks are separated from one another by respective gaps, and within a specific block, the individual diodes are electrically insulated from one another by first STI trenches situated between them.

MICROSYSTEM AND METHOD FOR MAKING A MICROSYSTEM

The invention relates to a microsystem () comprising a substrate (), a bottom electrode () arranged on the substrate (), a ferroelectric layer () arranged on the bottom electrode (), a top electrode () arranged on the ferroelectric layer () and an isolation layer () that is electrically isolating, that is arranged on the top electrode (), that extends from the top electrode () to the substrate () so that the isolation layer () covers the bottom electrode (), the ferroelectric layer () and the substrate () in a region around the complete circumference of the bottom electrode (), and the isolation layer () has the shape of a ring that confines in its centre a through hole () that is arranged in the region of the top electrode (). 1. A microsystem comprising a substrate , a bottom electrode arranged on the substrate , a ferroelectric layer arranged on the bottom electrode , a top electrode arranged on the ferroelectric layer and an isolation layer that is electrically isolating , that is arranged on the top electrode , that extends from the top electrode to the substrate so that the isolation layer covers the bottom electrode , the ferroelectric layer and the substrate in a region around the complete circumference of the top electrode , and the isolation layer has the shape of a ring that confines in its centre a through hole that is arranged in the region of the top electrode.2. A microsystem comprising a substrate , a bottom electrode arranged on the substrate , a ferroelectric layer arranged on the bottom electrode , a top electrode arranged on the ferroelectric layer and an isolation layer that is electrically isolating , that is arranged on the top electrode , that extends from the top electrode to the substrate so that the isolation layer covers the bottom electrode , the ferroelectric layer and the substrate in a region around essentially the complete circumference of the top electrode , and the isolation layer has the shape of a ring that confines in its centre ...

Fabry-perot interference filter and light-detecting device

A Fabry-Perot interference filter includes: a substrate having a first surface and a second surface facing each other; a first layer structure disposed on the first surface; and a second layer structure disposed on the second surface, wherein the first layer structure is provided with a first mirror portion and a second mirror portion facing each other with an air gap therebetween, and a distance between the first mirror portion and the second mirror portion is varied, and the second layer structure is formed with a separation region separating at least a part of the second layer structure into one side and another side in a direction along the second surface.

PROCESS FOR MANUFACTURING A MICROBOLOMETER CONTAINING VANADIUM OXIDE-BASED SENSITIVE MATERIAL

A process for manufacturing at least one microbolometer comprising a sensitive material based on vanadium oxide containing nitrogen as additional chemical element, includes steps of determining a non-zero effective amount of the additional chemical element starting from which the sensitive material, having undergone a step of exposure to a temperature Tfor a duration Δt, has an electrical resistivity ρat ambient temperature greater than or equal to 50% of the native value ρof said sensitive material at ambient temperature; producing the sensitive material in a thin layer having an amount of the additional chemical element greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 Ω·cm; and exposing the sensitive material to a temperature Tfor a duration Δt. 1. A process for manufacturing at least one microbolometer comprising a sensitive material for at least limiting noise degradation of said sensitive material , said sensitive material being formed of a first compound based on vanadium oxide and at least nitrogen as additional chemical element , the process comprising the following steps:a step of producing the sensitive material in a thin layer;{'sub': r', 'r', 'r', 'r', 'r', 'r, 'a step of exposing the sensitive material to a temperature Tgreater than the ambient temperature, for a duration Δt, this thermal exposure step being performed after the step of producing the sensitive material, the temperature Tand the duration Δtbeing such that said first compound, being amorphous and having a native electrical resistivity value at ambient temperature of between 1 Ω·cm and 30 Ω·cm, having undergone a step of exposure to the temperature Tfor the duration Δt, has an electrical resistivity at ambient temperature less than 50% of its native value;'}{'sub': r', 'r', 'a|r', 'a, 'determining a non-zero what is called effective amount of the additional chemical element ...

Method for making silicon-germanium absorbers for thermal sensors

A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH 4 gas and a SiH 4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH 4 gas and the SiH 4 gas are also heated and the pressure around the wafer is reduced to at least 2.5*10 −3 mBar to produce the polycrystalline silicon-germanium film. The polycrystalline silicon-germanium film is then annealed to improve its resistivity.

Scalable thermoelectric-based infrared detector

Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

Terahertz-wave detector

A terahertz-wave detector having a thermal separation structure in which a temperature detection unit 14 including a bolometer thin film 7 connected to electrode wiring 9 is supported so as to be lifted above a substrate 2 by a support part 13 including the electrode wiring 9 connected to a reading circuit 2 a formed on the substrate 2 , wherein the terahertz-wave detector is provided with a reflective film 3 that is formed on the substrate 2 and reflects terahertz waves and an absorption film 11 that is formed on the temperature detection unit 14 and absorbs terahertz waves and the reflective film 3 is integrally formed with the reflective film of an adjacent terahertz-wave detector.

INFRARED SENSOR STRUCTURE

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process. 1. An infrared sensor structure , comprises a cantilever switch array , the cantilever switch array comprises cantilever switches , and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam , vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other , when the cantilever beams are deformed towards the switches and connect to the switches , the switches turn on; wherein , deformations of different cantilever beams produced by absorbing infrared signal are different from each other , the intensity of the infrared signal can be quantified by number of the switches turned on.2. The infrared sensor structure of claim 1 , wherein the switch is a metal switch or a CMOS switch claim 1 , and the end of the cantilever beam comprises a metal for controlling the switch.3. The infrared sensor structure of claim 1 , wherein the cantilever switch array is built on a semiconductor substrate claim 1 , the switch is set on the surface of the semiconductor substrate claim 1 , and each cantilever ...

Micromechanical Sensor Device and Corresponding Production Method

A micromechanical sensor device and a corresponding production method include a substrate that has a front and a rear and a plurality of pillars that are formed on the front of the substrate. On each pillar, a respective sensor element is formed, which has a greater lateral extent than the associated pillar. A cavity is provided laterally to the pillars beneath the sensor elements. The sensor elements are laterally spaced apart from each other by respective separating troughs and make electrical contact with a respective associated rear contact via the respective associated pillar. 1. A micromechanical sensor device , comprising:a substrate having a front side and a rear side;a plurality of columns formed on the front side of the substrate;a respective sensor element formed on each column, said sensor element having a larger lateral extent than the associated column; anda cavity defined laterally with respect to the columns below the sensor elements,wherein the sensor elements are laterally spaced apart from one another by respective isolating trenches and are electrically contacted via the respective associated column at a respective associated rear-side contact.2. The micromechanical sensor device as claimed in claim 1 , wherein the sensor elements have a respective front-side contact and wherein the front-side contacts lie on a side of the sensor elements that faces away from the substrate.3. The micromechanical sensor device as claimed in claim 2 , wherein the substrate has an edge region with a ring contact that is led via a corresponding edge wall on the side of the sensor elements and is laterally spaced apart from the sensor elements by the respective isolating trenches.4. The micromechanical sensor device as claimed in claim 1 , wherein the sensor elements are infrared-sensitive and have a pyroelectric layer embedded between a first electrode layer and a second electrode layer.5. The micromechanical sensor device as claimed in claim 4 , wherein the sensor ...

MOLYBDENUM NITRIDE ABSORBER COATING FOR A DETECTOR

The present invention relates to an electrically thin molybdenum thin film absorber coating for a detector, that is capable of absorbing a fraction of incident electromagnetic radiation over a 1-15 THz spectral range. 1. A detector , comprising:a substrate, on which an absorber coating is disposed;wherein said absorber coating is a molybdenum nitride absorber coating;a transition edge sensor disposed on said substrate;wherein an optical impedance of said absorber coating is predetermined based on a thickness of said absorber coating;wherein said absorber coating enables absorption of electromagnetic radiation in the 1-15 THz spectral range.2. The detector of claim 1 , wherein said substrate is a silicon substrate.3. The detector of claim 2 , wherein the detector is arranged in a resonant absorber configuration including a reflective back-termination structure with a controlled delay spacing; andwherein said thickness of said absorber coating is about 5 nm for a 377 Ohm/square surface impedance.4. The detector of claim 3 , wherein an optical efficiency is substantially 100% when used with said reflective back-termination structure.5. The detector of claim 4 , wherein a thickness of said silicon substrate is about 0.45 micrometers.6. The detector of claim 2 , wherein the detector is arranged in a frequency independent configuration including an absorptive back-termination structure; andwherein said thickness of said absorber coating is about 14 nm for a 157 Ohm/square surface impedance.7. The detector of claim 6 , wherein an optical efficiency of said absorber coating is substantially 50% when used with said absorptive back-termination structure.8. The detector of claim 7 , wherein a thickness of said silicon substrate is about 1.45 μm.9. The detector of claim 1 , wherein a fabrication process of said molybdenum nitride absorber coating is by deposition via pulsed direct current (DC) reactive magnetron sputtering.10. The detector of claim 1 , wherein said molybdenum ...

ROBUST GMOS

A gas sensing device, that may include a suspended gas sensing element, a frame that supports the suspended gas sensing element, and one or more traps for trapping at least one out of Siloxane and silicon dioxide. The suspended gas sensing element may include a gas reactive element that has a gas dependent temperature parameter, and a semiconductor temperature sensing element that is thermally coupled to the gas reactive element, and is configured to generate detection signals that are responsive to a temperature of the gas reactive element. The gas reactive element and the semiconductor temperature sensing element are of microscopic scale. 1. A gas sensing device , comprising:a suspended gas sensing element;a frame that supports the suspended gas sensing element; andone or more traps for trapping at least one out of Siloxane and silicon dioxide; a gas reactive element that has a gas dependent temperature parameter; and', 'a semiconductor temperature sensing element that is thermally coupled to the gas reactive element, and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and', 'wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale., 'wherein the suspended gas sensing element comprises2. The gas sensing device according to wherein the one or more traps comprises hexamethyldisilazane.3. The gas sensing device according to wherein a trap of the one or more traps is deposited on the frame.4. The gas sensing device according to wherein a trap of the one or more traps is positioned on a part of the suspended gas sensing element that differs from the gas reactive element.5. The gas sensing element according to wherein a trap of the one or more traps is positioned on a bulk that supports the frame claim 1 , wherein the bulk is spaced apart from the suspended gas sensing element.6. The gas sensing element according to comprising multiple gas sensing elements.7. ...

LIGHT DETECTOR

A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, and in which a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend. 1. A light detector comprising:a substrate; anda membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane,wherein the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, andwherein a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend.2. The light detector according to claim 1 ,wherein the line includes a meandering portion having the curved portion.3. The light detector according to claim 2 ,wherein the meandering portion includes a first section which swings to one side by a first swinging amount larger than a predetermined amount and a second section which swings to one side by a second swinging amount smaller than the predetermined amount, andwherein the membrane is provided with a through-hole which is located at one side of the ...

THERMAL PILE SENSING STRUCTURE INTEGRATED WITH CAPACITOR

The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. Ahot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor. 1. A thermal pile sensing structure , comprising:a substrate, having a surface plane (X-Y plane) and a normal direction (Z-direction) which is perpendicular to the surface plane;an infrared sensing unit located above the substrate, anda partition structure, which extends in the Z-direction and surrounds the infrared sensing unit at the X-Y plane;wherein at least one hot junction and at least one cold junction are formed by the infrared sensing unit and/or the partition structure;wherein a temperature difference between the hot junction and the cold junction generates a voltage difference signal and a part of the partition structure forms at least one capacitor having an upper electrode and a lower electrode, wherein the upper electrode is located at a higher level than the lower electrode in the Z-direction.2. The thermal pile sensing structure of claim 1 , wherein the at least one capacitor includes a Metal-Insulator-Metal (MIM) capacitor or a Polysilicon-Insulator-Polysilicon (PIP) capacitor.3. The thermal pile sensing structure of claim 2 , wherein the partition ...

Bolometer having absorber with pillar structure for thermal shorting

A semiconductor device includes a substrate having an electrode structure. An absorber structure is suspended over the electrode structure and spaced a first distance apart from the first electrode structure. The absorber structure includes i) suspension structures extending upwardly from the substrate and being electrically connected to readout conductors, and ii) a pillar structure extending downwardly from the absorber structure toward the first electrode structure. The pillar structure has a contact portion located a second distance apart from the first electrode structure, the second distance being less than the first distance. The absorber structure is configured to flex toward the substrate under a test condition. The second distance is selected such that the contact portion of the pillar structure is positioned in contact with the first electrode structure when the absorber structure is flexed in response to the test condition.

Combined leg structure of micro bridge unit of focal plane array

A combined leg structure of a micro bridge unit of a focal plane array adopts a conductive polymer film or a doped conductive polymer film to serve as an extraction electrode in the micro bridge unit of the focal plane array, which contacts a vanadium oxide thermosensitive film or a doped vanadium oxide thermosensitive film of a bridge surface layer, so as to electrically connect the thermosensitive film of the micro bridge unit with a read-out circuit. The combined leg structure includes three layers: respectively an upper SiNx film layer, a lower SiNx film layer and a middle layer of the conductive polymer film or the doped conductive polymer film. The present invention adopts the conductive polymer film or the doped conductive polymer film having a low thermal conductivity to serve as an electrode material. A bridge leg absorption structure is arranged in the combined leg structure.

PYROELECTRIC MATERIAL, MANUFACTURING METHOD OF PYROELECTRIC MATERIAL, PYROELECTRIC ELEMENT, MANUFACTURING METHOD OF PYROELECTRIC ELEMENT, THERMOELECTRIC CONVERSION ELEMENT, MANUFACTURING METHOD OF THERMOELECTRIC CONVERSION ELEMENT, THERMAL PHOTODETECTOR, MANUFACTURING METHOD OF THERMAL PHOTODETECTOR, AND ELECTRONIC INSTRUMENT

A pyroelectric material is constituted with an oxide containing iron, manganese, bismuth, and lanthanum, in which a ratio of the number of the manganese atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of titanium atoms is equal to or greater than 1.0 at % and equal to or less than 2.0 at %, and a ratio of the number of the titanium atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of the titanium atoms is equal to or greater than 0 at % and equal to or less than 4.0 at %. 1. A pyroelectric material comprising an oxide containing iron , manganese , bismuth , and lanthanum ,wherein a ratio of the number of the manganese atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of titanium atoms is equal to or greater than 1.0 at % and equal to or less than 2.0 at %, anda ratio of the number of the titanium atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of the titanium atoms is equal to or greater than 0 at % and equal to or less than 4.0 at %.2. The pyroelectric material according to claim 1 ,wherein a ratio of the number of the lanthanum atoms to the sum of the number of the bismuth atoms and the number of the lanthanum atoms is equal to or greater than 10 at % and equal to or less than 20 at %.3. A manufacturing method of a pyroelectric material claim 1 , comprising heating a solution obtained by dissolving fatty acid metal salts in an organic solvent so as to manufacture a pyroelectric material constituted with an oxide containing iron claim 1 , manganese claim 1 , bismuth claim 1 , and lanthanum claim 1 ,wherein in the pyroelectric material, a ratio of the number of the manganese atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of titanium atoms is equal to or greater than 1.0 at % and equal to or less than 2.0 at %, and ...

READOUT CIRCUITS AND METHODS

Methods of sensor readout and calibration and circuits for performing the methods are disclosed. In some embodiments, the methods include driving an active sensor at a voltage. In some embodiments, the methods include use of a calibration sensor, and the circuits include the calibration sensor. In some embodiments, the methods include use of a calibration current source and circuits include the calibration current source. In some embodiments, a sensor circuit includes a Sigma-Delta ADC. In some embodiments, a column of sensors is readout using first and second readout circuits during a same row time. 1. A sensor readout circuit , comprising:a readout element comprising an input;a first current source;a second current source;a voltage driver comprising an output;a reference sensor comprising a first terminal and a second terminal, the first terminal electrically coupled to the first current source and the second terminal electrically coupled to the output of the voltage driver; and 'the active sensor is configured for exposure to a sensor image.', 'an active sensor comprising a first terminal and a second terminal, the first terminal electrically coupled to the second current source and the input of the readout element and the second terminal electrically coupled to the output of the voltage driver, wherein'}2. The circuit of claim 1 , wherein the first current and the second current are constant.3. The circuit of claim 1 , wherein the voltage driver generates a bias voltage for the active sensor.4. The circuit of claim 1 , wherein the active sensor is further configured to change a current from the first terminal of the active sensor to the input of the readout element when the active sensor is exposed to the sensor image.5. The circuit of claim 1 , wherein the active sensor is further configured to change an impedance of the active sensor when the active sensor is exposed to the sensor image.6. The circuit of claim 1 , wherein the reference sensor is a reference ...

Thermally Shorted Bolometer

In one embodiment, A MEMS sensor assembly includes a substrate, a first sensor supported by the substrate and including a first absorber spaced apart from the substrate, and a second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate. 1. A MEMS sensor assembly comprising:a substrate;a first sensor supported by the substrate and including a first absorber spaced apart from the substrate; anda second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate.2. The MEMS sensor assembly of claim 1 , wherein:the first absorber includes a plurality of spaced apart first conductive legs defining a first tortuous path across a first area above the substrate;the second absorber includes a plurality of spaced apart second conductive legs defining a second tortuous path across a second area above the substrate; andthe at least one thermal shorting portion extends downwardly from at least one of the plurality of spaced apart second conductive legs.3. The MEMS sensor assembly of claim 2 , wherein the at least one thermal shorting portion comprises a single thermal shorting leg extending downwardly from each of the plurality of spaced apart second conductive legs.4. The MEMS sensor assembly of claim 2 , wherein the at least one thermal shorting portion comprises a plurality of thermal shorting legs claim 2 , each of the plurality of thermal shorting legs extending downwardly from a respective one of the plurality of spaced apart second conductive legs ...

THERMAL PROTECTION MECHANISMS FOR UNCOOLED MICROBOLOMETERS

Methods and apparatus for preventing solar damage, and other heat-related damage, to uncooled microbolometer pixels. In certain examples, a thermochroic membrane that becomes highly reflective at temperatures above a certain threshold is applied over at least some of the microbolometer pixels to prevent the pixels from being damaged by excessive heat. 1. An uncooled microbolometer comprising:a base substrate;a plurality of pixels arranged in an array on the base substrate;a cap layer coupled to and disposed over the base substrate, the cap layer being configured to provide a cavity between the base substrate and the cap layer, the plurality of pixels being disposed within the cavity; anda thermally sensitive protective membrane disposed on the cap layer over a sub-array of at least some of the plurality of pixels, the thermally sensitive protective membrane including a thermochroic switch material configured to transition from a transmissive state into a reflective state in response to a temperature of thermochroic material reaching a predetermined threshold, the thermochroic material being transmissive to infrared radiation in the transmissive state and reflective to the infrared radiation in the reflective state.2. The uncooled microbolometer of wherein the thermochroic switch material is vanadium oxide.3. The uncooled microbolometer of wherein a phase of the vanadium oxide is VOthat undergoes a metal-insulator phase change at a temperature of approximately 67 degrees Celsius.4. The uncooled microbolometer of further comprising a cover layer disposed over the thermally sensitive protective membrane.5. The uncooled microbolometer of wherein the cap layer and the cover layer are made of silicon nitride.6. The uncooled microbolometer of wherein the thermally sensitive protective membrane is a continuous film disposed over all the plurality of pixels.7. The uncooled microbolometer of wherein the sub-array of at least some of the plurality of pixels includes a 5×5 sub- ...

Semiconductor package and manufacturing method thereof

A semiconductor package includes a substrate, at lest one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface. The light sensor or the thermal sensor is disposed on the first surface. The second surface has an opening to expose the light sensor (or the thermal sensor). The support is disposed on the first surface. The cover is disposed on the support, such that the cover is above the light sensor (or the thermal sensor) to form a first space between the cover and the light sensor (or the thermal sensor). The plate is placed on the second surface to cover the opening, such that a second space is formed between the plate and the light sensor (or the thermal sensor).

SCALABLE THERMOELECTRIC-BASED INFRARED DETECTOR

Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component. 1. A device comprising:a substrate comprising a complementary metal oxide semiconductor (CMOS) region and a sensor region;CMOS devices in the CMOS region;a substrate cavity in the substrate in the sensor region, the substrate cavity includes cavity sidewalls and cavity bottom surface and a membrane which serves as a cavity top surface;a micro-electrical mechanical system (MEMS) component disposed on the membrane; anda back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) levels with contacts and metal interconnects, wherein the BEOL dielectric comprises an opening to expose the MEMS component, wherein the opening forms a BEOL cavity above the MEMS component.2. The device of further comprises a reflector disposed on the cavity bottom surface.3. The device of wherein the reflector is protected by a protective liner which lines the cavity sidewalls of the substrate cavity and covers the reflector.4. The device of wherein the reflector is a metal silicide or a doped region at the substrate cavity.5. The device of wherein the plurality of interlayer dielectric (ILD) levels of the BEOL ...

LONG-WAVE INFRARED DETECTING ELEMENT, LONG-WAVE INFRARED DETECTING ELEMENT ARRAY STRUCTURE, LONG-WAVE INFRARED TEMPERATURE DETECTING DEVICE, AND THERMAL IMAGING DEVICE

A long-wave infrared detecting element includes a magnetic field generator configured to generate a magnetic field; a substrate on the magnetic field generator; a superparamagnetic material layer disposed to be separated from the substrate and magnetized by the magnetic field generated by the magnetic field generator; a support unit on the substrate to support the superparamagnetic material layer such that the superparamagnetic material layer separated from the substrate, such that the support unit and the superparamagnetic material layer generate heat by absorbing infrared radiation from the outside; and a magneto-electric conversion unit that generates an electrical signal proportional to both a strength of the magnetic field generated by the magnetic field generator and the magnetization of the superparamagnetic material layer. 1. A long-wave infrared detecting element comprising:a magnetic field generator configured to generate a magnetic field;a substrate on the magnetic field generator;a superparamagnetic material layer separated from the substrate and magnetized by the magnetic field generated by the magnetic field generator;a support unit on the substrate, the support unit supporting the superparamagnetic material layer such that the superparamagnetic material layer is separated from the substrate, such that the support unit and the superparamagnetic material layer generate heat by absorbing infrared radiation from an outside; anda magneto-electric conversion unit configured to generate an electrical signal proportional to both a strength of the magnetic field generated by the magnetic field generator and a magnetization of the superparamagnetic material layer,wherein the magnetization of the superparamagnetic material layer changes according to a temperature of the superparamagnetic material layer, andwherein the temperature of the superparamagnetic material layer changes according to an amount of the infrared radiation absorbed directly by the ...

CMOS CAP FOR MEMS DEVICES

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings. 1. A device comprising:a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS devices and a sensor region with micro-electro-mechanical system (MEMS) region with a MEMS component; anda CMOS compatible cap disposed on the substrate over the CMOS region and MEMS region, wherein the CMOS compatible cap includes CMOS layers, the CMOS compatible cap is elevated over the MEMS region to provide a cap cavity between the CMOS compatible cap and the MEMS region.2. The device of wherein the CMOS compatible cap comprises:a base cap having at least one cap release opening; anda seal cap for sealing the at least one cap release opening in the base cap.3. The device of wherein the MEMS component comprises a thermoelectric IR sensor.4. The device of wherein the CMOS compatible cap comprises:a base cap having a CMOS IR transparent base cap layer, the base cap includes a cap release opening; anda seal cap for sealing the cap release opening in the base cap.5. The device of wherein the seal cap comprises a CMOS IR transparent seal cap layer sealing the release opening.6. The device of wherein the seal cap comprisesa CMOS IR non-transparent seal cap layer sealing the release opening, wherein the seal cap layer is patterned to expose the CMOS IR-transparent base cap layer to allow IR transmission to the IR sensor while sealing the base cap; anda CMOS IR transparent seal cap layer disposed over the IR non-transparent patterned seal cap layer.7. The device of wherein a bottom surface of the CMOS compatible cap above the ...

Infrared imaging element, imaging device, and imaging system

An infrared imaging element of an embodiment includes: a first pixel portion including a first cell portion including a first infrared ray detecting portion detecting a first infrared ray and a second infrared ray with a wavelength different from a wavelength of the first infrared ray, and first supporting legs that support the first cell portion, the first supporting legs including a first and second wiring lines that convey an electrical signals obtained by the first infrared ray detecting portion; and a second pixel portion including a second cell portion including a second infrared ray detecting portion detecting the second infrared ray, and second supporting legs that support the second cell portion, the second supporting legs including a third and fourth wiring lines that convey an electrical signal obtained by the second infrared ray detecting portion.

MEMS SENSORS AND SYSTEMS

Disclosed herein are MEMS devices and systems and methods of manufacturing or operating the MEMS devices and systems for transmitting and detecting radiation. The devices and methods described herein are applicable to terahertz radiation. In some embodiments, the MEMS devices and systems are used in imaging applications. In some embodiments, a microelectromechanical system comprises a glass substrate configured to pass radiation from a first surface of the glass substrate through a second surface of the glass substrate, the glass substrate comprising TFT circuitry; a lid comprising a surface; spacers separating the lid and glass substrate; a cavity defined by the spacers, surface of the lid, and second surface of the glass substrate; a pixel in the cavity, positioned on the second surface of the glass substrate, electrically coupled to the TFT circuitry, and comprising an absorber to detect the radiation; and a reflector to direct the radiation to the absorbers and positioned on the lid. 1. A microelectromechanical system , comprising:a glass substrate configured to pass radiation from a first surface of the glass substrate through a second surface of the glass substrate, the glass substrate comprising TFT circuitry;a lid comprising a surface;spacers separating the lid and glass substrate;a cavity defined by the spacers, surface of the lid, and second surface of the glass substrate;a pixel in the cavity, positioned on the second surface of the glass substrate, electrically coupled to the TFT circuitry, and comprising an absorber to detect the radiation; anda reflector to direct the radiation to the absorber and positioned on the lid.2. The microelectromechanical system of claim 1 , wherein the spacers include material from a sacrificial layer.3. The microelectromechanical system of claim 1 , wherein the reflector and absorber are separated by one quarter of the wavelength of the radiation.4. The microelectromechanical system of claim 1 , wherein the reflector ...

PROCESS FOR MANUFACTURING A DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION, COMPRISING A GETTER MATERIAL

A process for manufacturing a detection device having at least one thermal detector covered by a mineral sacrificial layer, at least one getter portion covered by a carbon-based sacrificial layer, and a thin encapsulation layer surrounding the thermal detector and the getter portion includes a making a through-opening extending through the mineral sacrificial layer and opening on the substrate. The carbon-based sacrificial layer is deposited so as to cover the getter portion located in the through-opening and to entirely fill the through-opening. 1. A process for fabricating a device for detecting electromagnetic radiation , comprising:producing, on a substrate, at least one thermal detector, which is covered by at least one mineral sacrificial layer made of a mineral material able to be removed by a first chemical etch;producing a through-aperture that extends through the mineral sacrificial layer and that opens onto the substrate;producing a getter segment made of a metal that has a gettering effect, the getter segment being placed on and in contact with the substrate and at a distance from the thermal detector in a plane parallel to the substrate the getter segment being located in the through-aperture, at a distance from a lateral border that is defined by the mineral sacrificial layer and that bounds the through-aperture in the plane parallel to the substrate;producing a carbon-containing sacrificial layer made of a carbon-containing material that is inert to the first chemical etch and that is able to be removed by a second chemical etch, so as to cover the getter segment and to surround it in the plane parallel to the substrate, and to completely fill the through-aperture;producing a thin encapsulation layer comprising: a top portion that rests on the mineral sacrificial layer and on the carbon-containing sacrificial layer; and a peripheral portion that extends through the mineral sacrificial layer and that surrounds the thermal detector and the getter ...

MULTIBAND WAVELENGTH SELECTIVE DEVICE

A tunable electromagnetic radiation device that includes a wavelength selective structure comprising a plurality of layers. The plurality of layers includes a compound layer comprising a plurality of surface elements, an electrically isolating intermediate layer, and a continuous electrically conductive layer. The compound layer includes at least one metallic layer or metallic-like layer and at least one dielectric layer and is in contact with a first surface of the electrically isolating intermediate layer. The continuous electrically conductive layer is in contact with a second surface of the electrically isolating intermediate layer. The wavelength selective structure has at least one reflective or absorptive resonance band. The tunable electromagnetic radiation device further includes an electrode in electrical contact with at least one of the compound layer, the electrically isolating intermediate layer, and the continuous electrically conductive layer. 1. A tunable electromagnetic radiation device comprising: [ at least one metallic layer or metallic-like layer; and', 'at least one dielectric layer;, 'a compound layer comprising a plurality of surface elements, wherein the compound layer comprises, 'an electrically isolating intermediate layer, wherein the compound layer is in contact with a first surface of the electrically isolating intermediate layer; and', 'a continuous electrically conductive layer in contact with a second surface of the electrically isolating intermediate layer,, 'a wavelength selective structure comprising a plurality of layers, the plurality of layers comprisingwherein the wavelength selective structure has at least one reflective or absorptive resonance band; andan electrode in electrical contact with at least one of the compound layer, the electrically isolating intermediate layer, and the continuous electrically conductive layer,wherein the wavelength selective structure comprises a material having a material property that is ...

METHOD FOR FABRICATING A DETECTION DEVICE COMPRISING A STEP OF TRANSFERRING AND DIRECT BONDING OF A THIN LAYER PROVIDED WITH A GETTER MATERIAL

The invention relates to a method for fabricating a detection device comprising the following steps: 1. Method for fabricating a device for detecting electromagnetic radiation comprising the following steps: at least one thermal detector resting on the first substrate, configured to detect the electromagnetic radiation, and covered with at least one mineral sacrificial layer made of a mineral material that can be eliminated by a first chemical etching;', 'at least one lateral indentation, extending through the upper part of the thin encapsulation layer and part of the mineral sacrificial layer, and being located at a distance from the thermal detector in a plane parallel to the plane of the first substrate;', 'a thin encapsulation layer, extending above the thermal detector and contributing to the delimiting of a cavity in which the thermal detector is located, comprising an upper part resting on the mineral sacrificial layer;'}], 'forming a first stack, comprising a thin supporting layer, transparent to the electromagnetic radiation, resting on a supporting substrate,', 'at least one getter portion positioned on the thin supporting layer and partially covering the latter, and', 'a thin protective layer, covering the getter portion, made of a carbonaceous material that can be eliminated by a second chemical etching;, 'forming a second stack, comprisingassembling the first and second stacks by bringing the thin supporting layer into contact with the upper part of the thin encapsulation layer and directly bonding it thereto, so that the getter portion is located in the lateral indentation; thenforming at least one release vent through the thin supporting layer and the upper part of the thin encapsulation layer, opening onto the mineral sacrificial layer; theneliminating the mineral sacrificial layer by the first chemical etching;eliminating the thin protective layer by the second chemical etching;depositing a thin sealing layer on the thin supporting layer so as to ...

VERTICAL MICROBOLOMETER CONTACT SYSTEMS AND METHODS

Systems and methods are directed to vertical legs for an infrared detector. For example, an infrared imaging device may include a microbolometer array in which each microbolometer includes a bridge and a vertical leg structure that couples the bridge to a substrate such as a readout integrated circuit. The vertical leg structure may run along a path that is parallel to a plane defined by the bridge and may be oriented perpendicularly to the plane. The path may be disposed within, below, or above the plane defined by the bridge. 1. A method of forming an infrared imaging device , the method comprising:providing a device having a bolometer bridge structure formed on a sacrificial layer;depositing an additional sacrificial layer over the sacrificial layer;forming openings in the additional sacrificial layer;forming leg materials on sidewalls of the openings; andremoving the sacrificial layer and the additional sacrificial layer to suspend the bolometer bridge structure and the leg materials above a substrate of the infrared imaging device.2. The method of claim 1 , wherein the forming of the leg materials comprises:depositing a first dielectric layer on portions of the sacrificial layer and the additional sacrificial layer;performing a spacer etch of the first dielectric layer so that portions of the first dielectric layer remain on the sidewalls;depositing a metal layer over the portions of the first dielectric layer on the sidewalls, over the bolometer bridge structure, and over a contact structure of the device;depositing a second dielectric layer over the metal layer; andremoving portions of the metal layer and the second dielectric layer.3. The method of claim 2 , wherein:the removing of the portions of the metal layer and the second dielectric layer comprises forming vertical leg structures for the infrared imaging device that run continuously from the bolometer bridge structure to the contact structure;at least one of the vertical leg structures has (i) a first ...

Microbolometer detectors and arrays for printed photonics applications

Microbolometer detectors and arrays fabricated using printed electronics and photonics techniques, including ink-based printing, are disclosed. A microbolometer detector can include a substrate, a platform suspended above the substrate, and a thermistor printed on the platform and made of a thermistor material including an electrically conducting polymer, for example a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymeric composition. The microbolometer detector can also include an electrode structure electrically connected to the thermistor, and an ohmic contact layer interposed between the thermistor and the electrode structure. The electrode structure can be made of an electrode material including silver, while the ohmic contact layer can be made of an ohmic contact material including a PEDOT-carbon nanotube polymeric composition. A microbolometer array can include a plurality of microbolometer detectors arranged in a linear or two-dimensional matrix.

Etching of infrared sensor membrane

The invention relates to an infrared thermal sensor comprising a substrate having a cavity, a cavity bottom wall formed by a continuous substrate surface. The sensor comprises a membrane adapted for receiving heat from incident infrared radiation, a beam suspending the membrane, and a thermocouple. This membrane comprises openings extending through the membrane for facilitating the passage of an anisotropic etchant for etching the cavity during manufacture. Each opening has a cross-section with a length to width ratio of at least 4. The width direction of respectively a first and a second set of openings is oriented according to respectively a first crystallographic orientation and a second crystallographic orientation, these orientations corresponding to different directions lying in loosely packed crystal lattice faces of the semiconductor substrate.

SENSITIVE PIXEL BASED DETECTION SYSTEM COMPRISING A THERMAL DETECTOR AND A COMPENSATION DEVICE

A detection system includes a readout substrate, at least one thermal detector associated with a reflector, and at least one compensation device including a compensation transducer in thermal contact with the readout substrate, arranged between the reflector and the readout substrate, and situated facing the reflector so as to be optically insensitive to the incident electromagnetic radiation. 114-. (canceled)15. A system for detecting electromagnetic radiation , comprising:a readout substrate; an absorbent membrane for absorbing the electromagnetic radiation, thermally insulated from the readout substrate, and comprising a thermometric detection transducer selected from among a p-n junction or PIN diode, a field-effect transistor, or a thermistor material, and', 'a reflector for reflecting the electromagnetic radiation, arranged between the absorbent membrane and the readout substrate;, 'at least one thermal detector, comprising 'a thermometric compensation transducer selected from among a p-n junction or PIN diode, a field-effect transistor, or a thermistor material, in thermal contact with the readout substrate; and', 'at least one compensation device, comprisinga readout circuit, arranged in the readout substrate, and designed to apply an electrical signal to the thermal detector and to the compensation device, arranged between the reflector and the readout substrate, and', 'situated facing the reflector so as to be optically insensitive to the incident electromagnetic radiation., 'wherein the thermometric compensation transducer is16. The detection system as claimed in claim 15 , wherein the reflector covers the thermometric compensation transducer.17. The detection system as claimed in claim 15 , wherein the thermometric compensation transducer is in contact with the readout substrate through at least one insulating layer made from a dielectric material having a thermal conductivity substantially equal to that of the readout substrate.18. The detection system ...

Light sensing device and fabricating method thereof

A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.

Photo detector

A photo detector is disclosed. The photo detector comprises a substrate, a flat metal layer, a dielectric layer, a patterned metal layer, and a semiconductor film. The flat metal layer is formed on the substrate. The dielectric layer is formed on the flat metal layer. The patterned metal layer is, formed on the dielectric layer. The patterned metal layer comprises a first interdigitated electrode and a second interdigitated electrode. The first interdigitated electrode is adjacent to the second interdigitated electrode. The semiconductor film is formed on the dielectric layer and covering the first interdigitated electrode and the second interdigitated electrode. When the semiconductor film receives an incident light, the flat metal layer and the patterned metal layer are operated in a localized surface plasmon mode or a waveguide mode for absorbing a certain narrow bandwidth radiation light of the incident light. Therefore, the electrical conductivity of the semiconductor film is changed and the optical energy absorbed by the photo detector is determined.

DEVICES AND METHODS FOR INFRARED REFERENCE PIXELS

A device is disclosed including a substrate and a floating blinded infrared detector and/or a shunted blinded infrared detector. The floating blinded infrared detector may include an infrared detector coupled to and thermally isolated from the substrate; and a blocking structure disposed above the infrared detector to block external thermal radiation from being received by the infrared detector; and wherein the blocking structure comprises a plurality of openings. The shunted blinded infrared detector may include an additional infrared detector coupled to the substrate; an additional blocking structure disposed above the infrared detector to block external thermal radiation from being received by the additional infrared detector; and a material that thermally couples the additional infrared detector to the substrate and the additional blocking structure. Methods for using and forming the device are also disclosed. 1. A device , comprising:a substrate; and a first infrared detector coupled to and thermally isolated from the substrate;', 'a first blocking structure coupled to the substrate, disposed at a distance from the first infrared detector, and configured to block external thermal radiation from being received by the first infrared detector; and', 'wherein the first blocking structure comprises a plurality of openings., 'a floating blinded infrared detector comprising2. The device of claim 1 , further comprising an array of infrared detectors claim 1 , coupled to and thermally isolated from the substrate claim 1 , configured to receive external thermal radiation to capture infrared image data.3. The device of claim 1 , further comprising: a second infrared detector coupled to the substrate;', 'a second blocking structure coupled to the substrate, disposed at a distance from the second infrared detector, and configured to block external thermal radiation from being received by the second infrared detector; and', 'a material disposed beneath the second blocking ...

Infra-Red Device

We disclose herein an infra-red (IR) device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane which is adjacent, or directly above, or below the etched cavity portion of the substrate. The device further comprises a reflective layer on or in or above or below the dielectric membrane to enhance emission or absorption of infrared light at one or more wavelengths.

Mems infrared sensor including a plasmonic lens

A portable thermal imaging system includes a portable housing configured to be carried by a user, a bolometer sensor assembly supported by the housing and including an array of thermal sensor elements and at least one plasmonic lens, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, assign each of the obtained signals with a respective color data associated with a temperature of a sensed object, and render the color data.

High speed graphene oxide bolometers and methods for manufacturing the same

Bolometers and methods of forming the same are provided. A bolometer that includes a substrate, a support structure comprising at least one SiGe layer and at least one Si layer, an absorber comprising reduced graphene oxide, and a thermistor comprising partially reduced graphene oxide are described. Also described are methods for forming bolometers and the parts contained therein.

THERMAL PILE SENSING STRUCTURE INTEGRATED WITH CAPACITOR

The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor. 1. A thermal pile sensing structure , comprising:a substrate, having a surface plane (X-Y plane) and a normal direction (Z-direction) which is perpendicular to the surface plane;an infrared sensing unit located above the substrate, the infrared sensing unit including a hot junction; anda partition structure, which extends in the Z-direction and surrounds the infrared sensing unit at the X-Y plane, wherein at least one cold junction is formed between the partition structure and the infrared sensing unit;wherein a temperature difference between the hot junction and the cold junction generates a voltage difference signal and a part of the partition structure forms at least one capacitor having an upper electrode and a lower electrode, wherein the upper electrode is located at a higher level than the lower electrode in the Z-direction.2. The thermal pile sensing structure of claim 1 , wherein the at least one capacitor includes a Metal-Insulator-Metal (MIM) capacitor or a Polysilicon-Insulator-Polysilicon (PIP) capacitor.3. The thermal pile sensing structure of claim ...

METHOD FOR VEHICULAR CONTROL

A method for vehicular control includes providing a forward viewing camera, a yaw rate sensor, a longitudinal accelerometer, a speed sensor and a control system at the vehicle. While the vehicle is moving, an angular rotational velocity of the vehicle about a local vertical axis is determined, a yaw rate offset is determined, and a longitudinal acceleration is determined. A corrected yaw rate is determined responsive to the determined yaw rate offset of the yaw rate sensor and the determined longitudinal acceleration of the vehicle. The control system determines a projected driving path of the vehicle based at least in part on the determined corrected yaw rate. A hazard condition ahead of the vehicle in the projected driving path is determined at least in part responsive to detecting an object and to the projected driving path. The system automatically applies the brakes of the vehicle responsive to the determined hazard condition. 1. A method for vehicular control , said method comprising:providing a forward viewing camera at a vehicle so as to have a field of view forward of the vehicle;providing a yaw rate sensor at the vehicle, the yaw rate sensor operable to sense angular rotational velocity of the vehicle about a local vertical axis of the vehicle;providing a longitudinal accelerometer at the vehicle, the longitudinal accelerometer operable to sense a forward or reverse acceleration of the vehicle;providing a speed sensor at the vehicle, the speed sensor operable to sense speed of the vehicle;providing a control system at the vehicle, the control system comprising a processor operable to process outputs received from the yaw rate sensor, the longitudinal accelerometer and the speed sensor;sensing, via the yaw rate sensor, angular rotational velocity while the vehicle is moving, and providing an output of the yaw rate sensor to the control system;sensing, via the longitudinal accelerometer, forward or reverse acceleration while the vehicle is moving, and ...

Method of manufacturing an electromagnetic radiation detector with micro-encapsulation

A method of manufacturing a detector capable of detecting a wavelength range [λ 8 ; λ 14 ] centered on a wavelength λ 10 , including: forming said device on a substrate by depositing a sacrificial layer totally embedding said device; forming, on the sacrificial layer, a cap including first, second, and third optical structures transparent in said range [Δ 8 ; λ 14 ], the second and third optical structures having equivalent refraction indexes at wavelength λ 10 respectively greater than or equal to 3.4 and smaller than or equal to 2.3; forming a vent of access to the sacrificial layer through a portion of the cap, and then applying, through the vent, an etching to totally remove the sacrificial layer.

MICROMECHANIC STRUCTURE AND METHOD FOR MAKING THE MICROMECHANIC STRUCTURE

A micromechanic structure includes a substrate, an adhesion layer arranged on the substrate, a first metal layer arranged on the adhesion layer, a ferroelectric layer arranged on the first metal layer and including lead zirconate titanate, and a second metal layer arranged on the ferroelectric layer, wherein the lead concentration of the ferroelectric layer decreases in a stepped manner with increasing distance from the first metal layer such that the ferroelectric layer includes a plurality of partial layers in which the lead concentration is respectively uniform. 1. A micromechanic structure comprising:a substrate;an adhesion layer arranged on the substrate;a first metal layer arranged on the adhesion layer;a ferroelectric layer arranged on the first metal layer and including lead zirconate titanate, a lead concentration of the ferroelectric layer decreasing in a stepped manner with an increasing distance from the first metal layer such that the ferroelectric layer includes a plurality of partial layers in which the lead concentration is respectively uniform; anda second metal layer arranged on the ferroelectric layer.2. The micromechanic structure according to claim 1 , wherein a thickness of each of the plurality of partial layers is in a range from 100 nm to 900 nm.3. The micromechanic structure according to claim 1 , wherein a thickness of each of the plurality of partial layers is in a range from 400 nm to 600 nm.4. The micromechanic structure according to claim 1 , wherein a thickness of each of the plurality of partial layers is 500 nm.5. The micromechanic structure according to claim 1 , wherein a thickness of the ferroelectric layer is in a range from 200 nm to 5000 nm.6. The micromechanic structure according to claim 1 , wherein the ferroelectric layer has a pyroelectric coefficient higher than 1.5*10-4 C/(mK).7. The micromechanic structure according to claim 1 , wherein:in the ferroelectric layerc(Pb)/(c(Zr)+c(Ti)) is in a range from 0.9 to 1.0,c(Zr)/(c ...

Infrared radiation device and production method for same

Infrared radiation device and production method, capable of preventing electrode degradation by heat are provided. Infrared radiation device includes substrate, insulation layer, heat generating layer, electrode, foundation portion and electric conductor. Substrate has cavity exposing part of back surface of insulation layer. Foundation portion exists on inside and outside of vertical projection area (projection direction of which is along thickness direction of insulation layer) of opening edge, on surface of substrate, of cavity. Electric conductor is provided on surface of foundation portion. End of heat generating layer is provided as cover covering electric conductor. Electrode is in contact with surface of covering outside vertical projection area. Conductor has higher melting point than that of electrode and smaller electrical resistance than those of portion and layer.

CMOS CAP FOR MEMS DEVICES

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings. 1. A device comprising:a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS devices and a sensor region with micro-electro-mechanical system (MEMS) region with a MEMS component; anda CMOS compatible cap disposed on the substrate over the CMOS region and MEMS region, wherein the CMOS compatible cap includes CMOS layers, the CMOS compatible cap is elevated over the MEMS region to provide a cap cavity between the cap and the MEMS region.2. The device of wherein the cap comprises:a base cap having at least one cap release opening; anda seal cap for sealing the at least one cap release opening in the base cap.3. The device of wherein the MEMS component comprises a thermoelectric IR sensor.4. The device of wherein the cap comprises:a base cap having a CMOS IR transparent base cap layer, the base cap includes a cap release opening; anda seal cap for sealing the cap release opening in the base cap.5. The device of wherein the seal cap comprises a CMOS IR transparent seal cap layer sealing the release opening.6. The device of wherein the seal cap comprises a CMOS IR non-transparent seal cap layer sealing the release opening claim 4 , wherein the seal cap layer is patterned to expose the CMOS IR-transparent base cap layer to allow IR transmission to the IR sensor while sealing the base cap.7. The device of wherein the seal cap further comprises a CMOS IR transparent seal cap layer disposed over the IR non-transparent patterned seal cap layer.8. The device of wherein the MEMS component comprises an array of ...

Imaging apparatus and manufacturing method

The present technology relates to an imaging apparatus and a manufacturing method which enables sensitivity of an imaging apparatus using infrared rays to be improved. The imaging apparatus includes: a light-receiving element array in which a plurality of light-receiving elements including a compound semiconductor having light-receiving sensitivity in an infrared range are arrayed; a signal processing circuit that processes a signal from the light-receiving element; an upper electrode formed on a light-receiving surface side of the light-receiving element; and a lower electrode that is paired with the upper electrode, in which the light-receiving element array and the signal processing circuit are joined to each other with a film of a predetermined material, the upper electrode and the signal processing circuit are connected to each other through a through-via-hole penetrating a part of the light-receiving element, and the lower electrode is made as an electrode common to the light-receiving elements arrayed in the light-receiving element array. The present technology can be applied to an infrared sensor.

Method for making an infrared detection device

An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in a first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector.

Infrared detector

An infrared detector may be provided that includes: a micro-bolometer active cell which detects infrared and outputs a current signal; and a reference cell which includes a plurality of connected warm cells having the same structure and electrical characteristics as those of the micro-bolometer active cell, has the same electrical resistance value and average self-heating amount as those of the micro-bolometer active cell, and generates a reference current signal for the micro-bolometer active cell.

Optical layered structure, manufacturing method, and use

The present publication describes a heat-resistant optical layered structure, a manufacturing method for a layered structure, and the use of a layered structure as a detector, emitter, and reflecting surface. The layered structure comprises a reflecting layer, an optical structure on top of the reflecting layer, and preferably shielding layers for shielding the reflecting layer and the optical structure. According to the invention, the optical structure on top of the reflecting layer comprises at least one partially transparent layer, which is optically fitted at a distance to the reflecting layer.

MICROBOLOMETER CONTACT SYSTEMS AND METHODS

Systems and methods are directed to contacts for an infrared detector. For example, an infrared imaging device includes a substrate having a first metal layer and an infrared detector array coupled to the substrate via a plurality of contacts. Each contact includes for an embodiment a plurality of metal studs each having a first end and a second end and each disposed between the first metal layer and a second metal layer, wherein the first end of each metal stud is disposed on a portion of the first metal layer that is at least partially on the surface of the substrate. 1. An infrared imaging device comprising:a substrate having a first metal layer disposed at least partially on a surface of the substrate;an infrared detector array coupled to the substrate via a plurality of contacts, wherein each contact comprises:a second metal layer;a plurality of discrete metal studs each having a first end and a second end and each disposed between the first metal layer and the second metal layer, wherein the first end of each metal stud is disposed on a portion of the first metal layer that is at least partially on the surface of the substrate;wherein the second metal layer forms part of a leg metal layer to couple with an infrared detector within the infrared detector array;a third metal layer formed on the second metal layer; anda first passivation layer formed on the third metal layer.2. The infrared imaging device of claim 1 , wherein:the second metal layer covers a surface of the second end of each metal stud and wraps around an outer edge of the surface of the second end of each metal stud;a portion of the second metal layer that wraps around the outer edges of the second ends forms a depression in the second metal layer;the third metal layer at least partially fills the depression in the second metal layer; anda readout integrated circuit is formed within the substrate.3. The infrared imaging device of claim 2 , wherein the infrared detector array comprises a plurality ...

Device for detecting electromagnetic radiation comprising a raised electrical connection pad

A device for detecting electromagnetic radiation, including a readout circuit, which is located in a substrate, and an electrical connection pad, which is placed on the substrate, including a metal section that is raised above the substrate and electrically connected to the readout circuit. The detection device furthermore includes a protection wall that extends under the raised metal section so as to define therewith at least one portion of a cavity, and what is called a reinforcing layer section that is located in the cavity and on which the raised metal section rests.

Infrared sensor module

A sensor assembly for sensing infrared radiation and its manufacture are described. The sensor comprises at least one sensing element provided on or embedded in a substrate extending substantially in a substrate plane, a cap for covering the at least one sensing element, the cap comprising an upper wall for receiving radiation incident on the sensor assembly and a plurality of cavity walls arranged to define a cavity between the cap and the substrate for hosting the sensing element. At least one of said cavity walls subtends an angle with respect to the receiving upper wall so as to induce total internal reflection on said cavity walls for radiation incident thereon.

MEMS DEVICE HAVING CURVED REFLECTIVE LAYER AND METHOD FOR MANUFACTURING MEMS DEVICE

A MEMS device according to an example embodiment of the present disclosure includes: a lower substrate; an infrared sensor formed on the lower substrate; and a lower bonding pad disposed to cover the infrared sensor. The infrared sensor includes: a metal pad formed on an upper surface of the lower substrate and electrically connected to a detection circuit; a reflective layer formed on the upper surface of the lower substrate and reflecting an infrared band; an absorption plate disposed to be spaced apart from an upper portion of the reflective layer and absorbing infrared rays to change resistance; and an anchor formed on the metal pad to support the absorption plate and to electrically connect the metal pad and the absorption plate to each other. The reflective layer has a curved or stepped shape such that a distance between the reflective layer and the absorption plate varies depending on a position of the reflective layer. 1. A MEMS device comprising:a lower substrate;an infrared sensor formed on the lower substrate; anda lower bonding pad disposed to surround the infrared sensor,wherein the infrared comprises:a metal pad formed on an upper surface of the lower substrate to be electrically connected to a detection circuit;a reflective layer formed on the upper surface of the lower substrate and reflecting an infrared band;an absorption plate formed to be spaced apart from an upper portion of the reflective layer and absorbing infrared rays to change resistance; andan anchor formed in an upper portion of the metal pad to support the absorption plate and to electrically connect the metal pad and the absorption plate to each other, andwherein the reflective layer has a curved or stepped shape such that a distance between the reflective layer and the absorption plate varies depending on a position of the reflective layer.2. The MEMS device as set forth in claim 1 , wherein the distance between the reflective layer and the absorption plate ranges from 1.5 micrometers ...

Microbolometer systems and methods

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

INFRARED DETECTOR AND INFRARED SENSOR INCLUDING THE SAME

An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer. 1. An infrared detector comprising:a substrate;a first electrode, disposed on the substrate; andan infrared-absorbing layer disposed on the first electrode, wherein the infrared-absorbing layer absorbs infrared light in a specific wavelength band received from a target object and generates a current corresponding to absorbed infrared light; anda second electrode disposed on the infrared-absorbing layer, a first semiconductor layer comprising a first component;', 'a plurality of quantum dots comprising a second component, different from the first component, wherein the plurality of quantum dots are spaced apart from each other and disposed on the first semiconductor layer; and', 'a second semiconductor layer comprising covering the plurality of quantum dots., 'wherein the infrared-absorbing layer comprises2. The infrared detector of claim 1 , wherein the specific wavelength band is determined by a content of the second component in the infrared-absorbing layer.3. The infrared detector of claim 1 , wherein a center wavelength of the specific wavelength band is proportional to a content of the second component in the infrared-absorbing layer.4. The infrared detector of claim 1 , wherein the second component comprises In.5. The infrared detector of claim 1 , wherein specific wavelength band comprises the same wavelength band as a wavelength band absorbed by moisture.6. The infrared detector of claim 1 , wherein the infrared-absorbing layer generates a current having a magnitude in inverse proportion to a content of moisture in the target object.7. The infrared detector of claim 1 , wherein a center wavelength of the specific ...

Light detector

A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.

Sealed Infrared Imagers and Sensors

The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

PROCESS FOR MANUFACTURING A DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION, COMPRISING A SUSPENDED DETECTION ELEMENT

A process for fabricating a device for detecting electromagnetic radiation includes the step of providing a detecting element suspended by a supporting pillar. The pillar has a lateral through-aperture formed via a local break in the continuity of a layer of interest, because of the presence of a jut in a vertical orifice. 1: A process for fabricating a device for detecting electromagnetic radiation , the detecting device comprising:a substrate comprising a readout circuit; andat least one thermal detector resting on the substrate and connected to the readout circuit, comprising a detecting element suspended above the substrate by at least one supporting pillar; depositing, on the substrate, a first sacrificial layer;', 'producing, on the first sacrificial layer, at least one intermediate pad intended to form a jut, the intermediate pad being made of at least one material sensitive to a chemical etchant used subsequently to etch sacrificial layers;', 'depositing, on the first sacrificial layer and the intermediate pad, a second sacrificial layer;', 'producing, by locally etching the first and second sacrificial layers, at least one vertical orifice that is bounded transversely by a lateral border, said orifice being positioned so that a segment of the intermediate pad protrudes into the vertical orifice, thus forming a jut;', 'carrying out conformal deposition, on the lateral border of the vertical orifice, of a layer of interest used to form the supporting pillar, the layer of interest defining an empty internal space of the supporting pillar, the jut causing a local break in the continuity of the layer of interest, forming a lateral through-aperture in the supporting pillar;', 'depositing a sacrificial filling layer, so as to fill the empty internal space of the supporting pillar;', 'producing, on the second sacrificial layer and the sacrificial filling layer, the detecting element, which rests on and in contact with the supporting pillar; and', 'suspending the ...

Small-size infrared sensor structure and manufacturing method therefor

The present disclosure discloses a small-size infrared sensor structure and a manufacturing method therefor. Trench is etched in a conductive beam region, and the conductive beam is formed by the sidewall of the trench, so that the small-size infrared sensor structure with adjacent pixel structures can share one conductive support hole, thereby improving integration degree of the pixels, enlarging the regions of the infrared detection regions of the pixels, and improving infrared detection efficiency.

STRUCTURE FOR DETECTING ELECTROMAGNETIC RADIATION OF THE BOLOMETER TYPE AND METHOD FOR MANUFACTURING SUCH A STRUCTURE

A bolometer type detection structure for detecting electromagnetic radiation is provided, including a MOSFET transistor associated with a first absorbing element in order to detect an increase in temperature of the first absorbing element during absorption of the electromagnetic radiation, the transistor including at least one first and at least one second zones, at least one third zone separating the first and second zones from each other, and at least one first gate electrode arranged to bias the third zone, the first gate electrode including at least one first metal portion forming the first absorbing element, the first metal portion having a thickness Esatisfying: 115.-. (canceled)17. The bolometer type detection structure according to claim 16 , wherein the at least one first metal portion of the at least one first gate electrode is produced from a metal of the mid-gap type for the at least one third zone.18. The bolometer type detection structure according to claim 17 , wherein the at least one first metal portion is made from a metal chosen from among a group comprising titanium nitrides claim 17 , tantalum nitrides claim 17 , and molybdenum silicides claim 17 , the at least one third zone being made of silicon.19. The bolometer type detection structure according to claim 17 , wherein the at least one first gate electrode is in short-circuit with one of the at least one first zone and the at least one second zone.20. The bolometer type detection structure according to a claim 16 , wherein the at least one first zone is surrounded by the at least one third zone claim 16 , the at least one third zone being surrounded by the at least one second zone.22. The bolometer type detection structure according to claim 21 ,wherein the at least one first zone is surrounded by the at least one third zone, the at least one third zone being surrounded by the at least one second zone,wherein the fifth zone surrounds the at least one second zone, andwherein the fourth zone ...

BOLOMETER

A bolometer is described. A bolometer includes a superconductor-insulator-semiconductor-superconductor structure or a superconductor-insulator-semiconductor-insulator-superconductor structure. The semiconductor comprises an electron gas in a layer of silicon, germanium or silicon-germanium alloy in which valley degeneracy is at least partially lifted. The insulator or a one or both of the insulators may comprise a layer of dielectric material. The insulator or a one or both of the insulators may comprise a layer of non-degenerately doped semiconductor. 1. A bolometer comprising a superconductor-insulator-semiconductor-superconductor structure or a superconductor-insulator-semiconductor-insulator-superconductor structure , wherein the semiconductor comprises an electron gas in a layer of silicon , germanium or silicon-germanium alloy in which valley degeneracy is at least partially lifted.2. A bolometer according to claim 1 , wherein the layer of silicon claim 1 , germanium or silicon-germanium is strained.3. A bolometer according to claim 1 , wherein the silicon claim 1 , germanium or silicon-germanium layer comprises a layer of n-type silicon claim 1 , germanium or silicon-germanium.4. A bolometer according to claim 3 , wherein the silicon claim 3 , germanium or silicon-germanium layer is doped to a concentration of at least 1×10cm.5. A bolometer according to claim 1 , wherein the silicon claim 1 , germanium or silicon-germanium layer has a thickness of no more than 100 nm.6. A bolometer according to claim 1 , wherein the silicon claim 1 , germanium or silicon-germanium layer includes a delta-doped layer.7. A bolometer according to claim 1 , wherein the silicon claim 1 , germanium or silicon-germanium layer includes a quantum well.8. A bolometer according to claim 1 , wherein the insulator or a one of or both insulators comprises a layer of dielectric material.9. A bolometer according to claim 8 , wherein the dielectric material comprises an oxide.10. A bolometer ...

Process for Producing an Infrared Detector and Associated Infrared Detector

A method of manufacturing an infrared detector includes the steps of: hybrid bonding of a detection chip to a second chip; said hybrid bonding step being carried out by adhesion of contacts and of insulator layers of the two chips; removal of a substrate of said detection chip to reach a deep oxide layer; forming of conductive pads through said deep oxide layer to reach transistors present in a semiconductor layer; and forming of microbolometers suspended over said deep oxide layer and electrically connected to the conductive pads. 1. A method of manufacturing an infrared detector comprising the steps of: said detection chip comprising a substrate topped with a deep oxide layer, a fully depleted semiconductor layer integrating transistors, a metal interconnection network, and an insulator layer;', 'said detection chip comprising a hybridization surface having contacts emerging from said insulator layer, and connected to the metal interconnection network; and', 'said second chip comprising a substrate having transistors and contacts emerging from an insulator layer at the level of a hybridization surface formed therein;, 'hybrid bonding of a detection chip onto a second chip, and during the hybrid bonding;'}the hybrid bonding step being formed by adhesion of the contacts and of the insulator layers of the two chips;removal of the substrate of said detection chip to reach said deep oxide layer;forming of conductive pads through said deep oxide layer to reach the transistors present in said semiconductor layer; andforming of microbolometers suspended over said deep oxide layer and electrically connected to the conductive pads.2. A method of manufacturing an infrared detector according to claim 1 , wherein the method also comprises a step of forming a metal reflector on said deep oxide layer.3. A method of manufacturing an infrared detector according to claim 2 , wherein the method also comprises a step of forming of contacts through said deep oxide layer to reach an ...

Microbolometer structure

Methods, systems, and apparatus to manufacture a microbolometer detector in a standard CMOS foundry. The method includes forming a Complementary Metal Oxide Semiconductor (CMOS) wafer including a silicon substrate layer, a metal stack, a dielectric layer, and a thermoelectric conversion element embedded in the dielectric layer. The metal stack includes at least two metal layers in contact with each other. The metal stack and the dielectric layer are on the silicon substrate layer. The thermoelectric conversion element is configured to convert heat into an electrical signal. The method includes etching the metal stack to define exterior lateral edges of a microbolometer bridge including at least a portion of the dielectric layer and the thermoelectric conversion element embedded in the dielectric layer. The method includes etching the silicon substrate layer beneath the microbolometer bridge.

INFRARED IMAGING ELEMENT, INFRARED IMAGING ARRAY, AND METHOD FOR MANUFACTURING INFRARED IMAGING ELEMENT

This infrared imaging element includes: a substrate which has a front surface and a back surface and to which a circuit unit is provided; a support leg wiring line that is disposed above the front surface of the substrate; and an infrared-ray detection unit which is held on the support leg wiring line and to which a diode electrically connected to the circuit unit via the support leg wiring line is provided, wherein the temperature change of the infrared-ray detection unit is detected as an electrical signal change of the diode by the circuit unit. The substrate, the support leg wiring line, and the infrared-ray detection unit are laminated at intervals in a direction perpendicular to the front surface of the substrate. 110-. (canceled)11. An infrared imaging element , comprising: a supporting leg wiring;', 'a metal layer provided on the supporting leg wiring; and', 'an infrared detection part held on the supporting leg wiring and provided with a diode electrically connected to the metal layer through the supporting leg wiring, and, 'a first substrate, comprising a substrate having a front surface and a back surface and provided with a circuit part; and', 'a metal layer formed on the front surface of the substrate,', 'the first substrate being bonded to the second substrate so that the metal layer is connected to the metal layer, and, 'a second substrate, comprisingthe infrared imaging element detecting a temperature change of the infrared detection part as a change of an electrical signal of the diode by the circuit part, whereinthe substrate, the supporting leg wiring, and the infrared detection part are stacked in a direction Z perpendicular to the front surface of the substrate at an interval therebetween,the supporting leg wiring has one end connected to the metal layer which is formed on the metal layer provided on the surface of the substrate and to be a micro bump and another end connected to a metal wiring provided on the infrared detection part,the metal ...

RADIATION DETECTOR AND METHOD FOR MANUFACTURING A RADIATION DETECTOR

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate. 1. A radiation detector comprising a substrate and a membrane suspended above the substrate by spacers , wherein the spacers electrically contact a radiation sensor formed in the membrane and predominately thermally insulate the membrane from the substrate.2. The radiation detector according to claim 1 , wherein the membrane is suspended on the spacers without ridges or wherein the membrane is suspended on at least one of the spacers by a ridge claim 1 , the thermal insulation at the at least one spacer being favored by the spacers.3. The radiation detector according to claim 1 , wherein a reflector is disposed between the substrate and the membrane.4. The radiation detector according to claim 3 , wherein the reflector is disposed between the substrate and the membrane by further spacers.5. The radiation detector according to claim 3 , wherein the reflector comprises a metal layer.6. The radiation detector according to claim 3 , wherein the distance between the reflector and the membrane is an odd claim 3 , integral multiple of a quarter of a main wavelength to be detected.7. The radiation detector according to claim 1 , wherein the spacers are hollow on the inside.8. The radiation detector according to claim 1 , wherein the spacers are manufactured by using ALD and a sacrificial layer method.9. The radiation detector according to claim 1 , wherein a wall of the spacers comprises a plurality of layers of different materials.10. The radiation detector according to claim 9 , wherein the plurality of layers comprise at least one layer of TiN claim 9 , Ti claim 9 , Cu claim 9 , W claim 9 , Sn claim 9 , Ni claim 9 , Au claim 9 , Al or a combination thereof claim 9 , surrounded by an oxide layer.11. The radiation detector according to ...

Thermal protection mechanisms for uncooled microbolometers

Methods and apparatus for preventing solar damage, and other heat-related damage, to uncooled microbolometer pixels. In certain examples, at least some of the pixels of an uncooled microbolometer are configured with a bimetallic thermal shorting structure that protects the pixel(s) from excessive heat damage. In other examples a thermochroic membrane that becomes highly reflective at temperatures above a certain threshold is applied over the microbolometer pixels to prevent the pixels from being damaged by excessive heat.

Method for making a device for detecting electromagnetic radiation comprising a layer of getter material

A method makes an electromagnetic radiation detecting device including at least one thermal detector with an absorbent membrane suspended above a substrate, intended to be located in a sealed cavity. The method includes depositing, on the substrate, a gettering metallic layer including a metallic material with a gettering effect; depositing a carbonaceous sacrificial layer of amorphous carbon on the gettering metallic layer; depositing at least one sacrificial mineral layer on the carbonaceous sacrificial layer; chemical-mechanical planarization of the sacrificial mineral layer; fabricating the thermal detector so that the absorbent membrane is produced on the sacrificial mineral layer; removing the sacrificial mineral layer; and removing the carbonaceous sacrificial layer.

PROCESS FOR DETERMINING STATE OF A VEHICLE

A method for determining a corrected yaw rate for a vehicle includes receiving a first yaw rate input from a yaw rate sensor of the vehicle and determining if the vehicle is moving or stationary. If the vehicle is determined to be moving, the method includes determining a steering angle of the vehicle, and determining an offset correction value based at least in part on a determined speed of the vehicle and the determined steering angle. A yaw rate offset is determined based at least in part on the determined offset correction value and the received first yaw rate input. A second yaw rate input is received from the yaw rate sensor of the vehicle, and a corrected yaw rate value is determined based at least in part on the received second yaw rate input and the determined yaw rate offset. 1. A method for determining a corrected yaw rate for a vehicle , said method comprising:receiving a first yaw rate input from a yaw rate sensor of the vehicle;determining if the vehicle is moving or stationary;if the vehicle is determined to be moving, determining a steering angle of the vehicle;determining an offset correction value based at least in part on a determined speed of the vehicle and the determined steering angle;determining a yaw rate offset based at least in part on the determined offset correction value and the received first yaw rate input;receiving a second yaw rate input from the yaw rate sensor of the vehicle; anddetermining a corrected yaw rate value based at least in part on the received second yaw rate input and the determined yaw rate offset.2. The method of claim 1 , wherein claim 1 , if the vehicle is determined to be stationary claim 1 , said method comprises determining that the offset correction value is within 10 percent of a previously determined offset correction value.3. The method of claim 1 , wherein claim 1 , if the vehicle is determined to be moving below a threshold speed and the steering angle is determined to be less than a threshold level claim ...

Multiband wavelength selective device

A tunable electromagnetic radiation device that includes a wavelength selective structure comprising a plurality of layers. The plurality of layers includes a compound layer comprising a plurality of surface elements, an electrically isolating intermediate layer, and a continuous electrically conductive layer. The compound layer includes at least one metallic layer or metallic-like layer and at least one dielectric layer and is in contact with a first surface of the electrically isolating intermediate layer. The continuous electrically conductive layer is in contact with a second surface of the electrically isolating intermediate layer. The wavelength selective structure has at least one reflective or absorptive resonance band. The tunable electromagnetic radiation device further includes an electrode in electrical contact with at least one of the compound layer, the electrically isolating intermediate layer, and the continuous electrically conductive layer.

Thermal pile sensing structure integrated with capacitor

The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.

Multiband wavelength selective structure

A wavelength selective structure for selectively reflecting or absorbing incident electromagnetic visible or infrared radiation. The wavelength selective structure includes a wavelength selective structure with a plurality of layers, including a compound layer forming a plurality of surface elements, an electrically isolating intermediate layer, wherein the compound layer is in contact with a first surface of the electrically isolating intermediate layer, and a continuous electrically conductive layer in contact with a second surface of the electrically isolating intermediate layer. The compound layer includes at least one metallic layer and at least one dielectric layer. The selective surface has at least one resonance band for selectively reflecting or absorbing visible or infrared radiation based on a resonant electromagnetic coupling between the plurality of surface elements and the continuous electrically conductive layer.

MULTIBAND WAVELENGTH SELECTIVE DEVICE

A tunable electromagnetic radiation device that includes a wavelength selective structure including a plurality of layers. The plurality of layers includes a compound layer including a plurality of surface elements, an electrically isolating intermediate layer, and a continuous electrically conductive layer. The compound layer includes at least one metallic layer or metallic-like layer and at least one dielectric layer and is in contact with a first surface of the electrically isolating intermediate layer. The continuous electrically conductive layer is in contact with a second surface of the electrically isolating intermediate layer. The wavelength selective structure has at least one reflective or absorptive resonance band. The tunable electromagnetic radiation device further includes an electrode in electrical contact with at least one of the compound layer, the electrically isolating intermediate layer, and the continuous electrically conductive layer. 1. A tunable electromagnetic radiation device comprising: a continuously electrically conductive layer;', 'an electrically isolating intermediate layer disposed on the continuously electrically conductive layer; and', 'a compound layer comprising a plurality of surface elements, wherein each of the plurality of surface elements comprises a first metallic layer disposed on the electrically isolating intermediate layer and a dielectric layer disposed on the first metallic layer, wherein:', 'a material property of the first metallic layer, the dielectric layer, the electrically isolating intermediate layer, and/or the continuous electrically conductive layer is variable in response to an external signal applied to the tunable electromagnetic radiation device, and', 'variation in the material property tunes at least one resonance band., 'a wavelength selective structure comprising2. The tunable electromagnetic radiation device of claim 1 , wherein each of the surface elements is a raised patch claim 1 , and wherein ...

Chemical sensor

We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.

DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION WITH REDUCED CROSSTALK

The invention concerns a detection device for detecting electromagnetic radiation, comprising a substrate, an array of thermal detectors, each thermal detector comprising a suspended absorbent membrane and a reflective layer. The detection device comprises at least one opaque vertical wall, arranged on the substrate and extending longitudinally between two adjacent thermal detectors, and produced from a material that is opaque to the electromagnetic radiation to be detected. 1. A device for detecting electromagnetic radiation , comprising:a substrate comprising a readout circuit;a matrix of thermal detectors intended to absorb the electromagnetic radiation to be detected, disposed on the substrate, each thermal detector comprising:an absorbent membrane suspended above the substrate by anchoring pillars disposed on and in contact with the substrate, and by holding arms, the anchoring pillars and the holding arms ensuring an electrical connection of the absorbent membrane to the readout circuit, anda reflective layer disposed on the substrate facing the absorbent membrane;at least one opaque vertical wall, disposed on and in contact with the substrate and extending longitudinally between two adjacent thermal detectors, and produced in a material that is opaque to the electromagnetic radiation to be detected,the opaque vertical wall extending longitudinally along an axis passing through two neighboring anchoring pillars;the opaque vertical wall is produced in a single piece with at least one anchoring pillar.2. The detection device as claimed in claim 1 , wherein each thermal detector is surrounded claim 1 , in a plane parallel to the substrate claim 1 , by opaque vertical walls.3. The detection device as claimed in claim 1 , wherein each opaque vertical wall is produced in the same material or materials as the anchoring pillars.4. The detection device as claimed in claim 1 , wherein the opaque vertical wall is at a distance from the holding arms and from the absorbent ...

SCALABLE THERMOELECTRIC-BASED INFRARED DETECTOR

Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component. 1. A method for forming a device comprising:providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region;forming a substrate cavity in the substrate in the sensor region, the substrate cavity includes cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface, wherein the cavity bottom surface comprises a reflector;forming CMOS devices in the CMOS region;forming a micro-electrical mechanical system (MEMS) component on the membrane; andforming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers, wherein the BEOL dielectric comprises an opening to expose the MEMS component, wherein the opening forms a BEOL cavity above the MEMS component.2. The method of claim 1 , wherein forming the substrate cavity comprises:etching the substrate to form the substrate cavity with the cavity sidewalls and the cavity bottom surface;forming the reflector on the substrate cavity bottom surface;filling the substrate cavity with a sacrificial material; andforming the membrane, wherein the ...

Resistive Switching for MEMS Devices

A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal-insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state. 1. A microelectromechanical systems (MEMS) device , comprising:a silicon wafer having an upper surface, the upper surface defining a sensing region;a patterned conductive layer on the upper surface;a bolometer including a suspension portion that extends over the sensing region, the suspension portion being suspended above the sensing region by at least one anchor structure which extends upwardly from the patterned conductive layer to space the suspension portion a predetermined distance apart from the upper surface of the silicon wafer, the suspension portion and the at least one anchor structure being formed by a layer stack comprising a bottom insulator layer and a top conductive layer; anda control circuit electrically connected to the patterned conductive layer and being configured to selectively apply a first DC voltage and a second DC voltage to the patterned conductive layer,wherein the at least one anchor structure includes a base portion that is attached to the patterned conductive layer,wherein, in the base portion of the at least one anchor structure, the bottom insulator layer is arranged adjacent the patterned conductive layer and is interposed between the top conductive layer and the patterned conductive layer such that there is no direct contact between the top conductive layer and the patterned conductive layerwherein the base portion of the at least one anchor structure is ...

LOW COST AND HIGH PERFORMANCE BOLOMETER CIRCUITRY AND METHODS

A bolometer circuit may include an active bolometer configured to receive external infrared (IR) radiation. The bolometer circuit may be configured to reduce power consumption at high temperatures. In particular, the bolometer circuit may include additional resistors provided in the resistive loads for bolometer conduction paths to limit power at high temperatures. In some embodiments, the bias (e.g., a voltage level) to the gates of transistors in the resistive loads for the bolometer conduction paths may be adjusted based on temperature to limit power and/or current at high temperatures. In bolometer circuits with a feedback resistor provided across an amplifier to configure a feedback amplifier, a circuit with adjustable amplifier power may be provided to save power. In some embodiments, a bolometer circuits may be provided with reduced gains to allow for very hot scenes to be imaged without railing the output. 1. A bolometer circuit comprising:a substrate;an active bolometer configured to receive external infrared (IR) radiation and substantially thermally isolated from the substrate; anda thermally shorted bolometer and a transistor configured to be connected in series with the active bolometer in a bolometer conduction path from a supply voltage node to a common voltage node, the transistor operating as a current source that generates a load current to the active bolometer and the thermally shorted bolometer thermally shorted to the substrate to operate as a temperature-compensated load for the bolometer conduction path,wherein the bolometer circuit is configured to limit the load current and reduce power consumption when an ambient temperature is elevated.2. The bolometer circuit of claim 1 , further comprising a resistor provided in series between the thermally shorted bolometer and the transistor claim 1 , the resistor being configured to substantially maintain its resistance over temperature claim 1 , thereby limiting the load current and reducing power ...

Process for a monolithically-integrated micromachined sensor and circuit

A process using integrated sensor technology in which a micromachined sensing element and signal processing circuit are combined on a single semiconductor substrate to form, for example, an infrared sensor. The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm, after the circuit fabrication process is completed. The process generally entails forming a circuit device on a substrate by processing steps that include forming multiple dielectric layers and at least one conductive layer on the substrate. The dielectric layers comprise an oxide layer on a surface of the substrate and at least two dielectric layers that are in tension, with the conductive layer being located between the two dielectric layers. The surface of the substrate is then dry etched to form a cavity and delineate the diaphragm and a frame surrounding the diaphragm. The dry etching step terminates at the oxide layer, such that the diaphragm comprises the dielectric layers and conductive layer. A special absorber is preferably fabricated on the diaphragm to promote efficient absorption of incoming infrared radiation.

Process for a monolithically-integrated micromachined sensor and circuit

A process using integrated sensor technology in which a micromachined sensing element and signal processing circuit are combined on a single semiconductor substrate to form, for example, an infrared sensor. The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm, after the circuit fabrication process is completed. The process generally entails forming a circuit device on a substrate by processing steps that include forming multiple dielectric layers and at least one conductive layer on the substrate. The dielectric layers comprise an oxide layer on a surface of the substrate and at least two dielectric layers that are in tension, with the conductive layer being located between the two dielectric layers. The surface of the substrate is then dry etched to form a cavity and delineate the diaphragm and a frame surrounding the diaphragm. The dry etching step terminates at the oxide layer, such that the diaphragm comprises the dielectric layers and conductive layer. A special absorber is preferably fabricated on the diaphragm to promote efficient absorption of incoming infrared radiation.

FAR INFRARED (FIR) SENSOR DEVICE AND MANUFACTURING METHOD THEREOF AND DETERMINATION METHOD OF THICKNESS OF SENSOR DIELECTRIC LAYER THEREOF

The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.

Sensor and method for manufacturing a sensor

Sensor (100; 200), mit folgenden Merkmalen: einem Substrat (110); einer Membran (120; 220); einem ersten und einem zweiten Abstandshalter (130-1, 130-2), die auf dem Substrat (110) angeordnet sind; einer ersten Haltestruktur (140-1), die seitlich neben der Membran (120; 220) von dem ersten Abstandshalter (130-1) gehalten wird und eine erste Elektrode (150-1) auf einer dem Substrat (110) zugewandten ersten Hauptseite (122) der Membran (120; 220) kontaktiert; und einer zweiten Haltestruktur (140-2), die seitlich neben der Membran (120; 220) von dem zweiten Abstandshalter (130-2) gehalten wird und eine zweite Elektrode (150-2) auf einer der ersten Hauptseite (122) gegenüberliegenden zweiten Hauptseite (124) der Membran (120; 220) kontaktiert, so dass die Membran (120; 220) über den ersten und zweiten Abstandshalter (130-1, 130-2) aufgehängt und mit Kontaktflächen (112-1, 112-2) des Substrats (110) elektrisch verbunden ist; wobei die Membran (120; 220) einen pn-Übergang (222) aufweist, der sich parallel zu einer Oberfläche des Substrats (110) erstreckt, so dass der pn-Übergang (222) seriell zwischen die Kontaktflächen (112-1, 112-2) des Substrats (110) geschaltet ist. Sensor (100; 200) having the following features: a substrate (110); a membrane (120; 220); first and second spacers (130-1, 130-2) disposed on the substrate (110); a first holding structure (140-1) which is held laterally next to the membrane (120; 220) by the first spacer (130-1) and a first electrode (150-1) on a first main side (110) facing the substrate (110) 122) the membrane (120; 220) contacted; and a second holding structure (140-2) which is held laterally next to the membrane (120; 220) by the second spacer (130-2) and a second electrode (150-2) on a second opposite side of the first main side (122) Main side (124) of the membrane (120; 220) contacted so that the membrane (120; 220) is suspended over the first and second spacers (130-1, 130-2) and with contact surfaces (112-1, 112-2) the substrate ...

影像模组

本发明提供一种可以对发出红外线的物体成像的影像模组。所述影像模组包括至少一个非球面透镜单元、红外线影像传感器以及允许红外线通过的红外线滤波器，所述红外线滤波器设置在影像传感器与透镜单元之间。

微测辐射热计结构

本发明提供一种在标准CMOS铸造厂中制造微测辐射热计探测器的方法，系统和设备。该方法包括形成互补金属氧化物半导体(CMOS)晶片，其包括硅衬底层，金属叠层，介电层和嵌入在介电层中的热电转换元件。金属叠层包括至少两个彼此接触的金属层。金属叠层和介电层位于硅衬底层上。热电转换元件配置为将热量转换为电信号。该方法包括蚀刻金属叠层以限定微测辐射热计桥的外侧边缘，该微测辐射热计桥包括介电层的至少一部分和嵌入介电层中的热电转换元件。该方法包括在微测辐射热计桥下方蚀刻硅衬底层。

微测辐射热计结构

本发明提供一种在标准CMOS铸造厂中制造微测辐射热计探测器的方法，系统和设备。该方法包括形成互补金属氧化物半导体(CMOS)晶片，其包括硅衬底层，金属叠层，介电层和嵌入在介电层中的热电转换元件。金属叠层包括至少两个彼此接触的金属层。金属叠层和介电层位于硅衬底层上。热电转换元件配置为将热量转换为电信号。该方法包括蚀刻金属叠层以限定微测辐射热计桥的外侧边缘，该微测辐射热计桥包括介电层的至少一部分和嵌入介电层中的热电转换元件。该方法包括在微测辐射热计桥下方蚀刻硅衬底层。

There is the sensing device of thermal antenna and for the method for sensing electromagnetic radiation

提供了一种方法和一种感测器件。所述感测器件可以包括：热天线，其包括电阻材料并且具有其大小为微米或亚微米量级的横截面。所述热天线可以接收电磁辐射并且把它直接转换为热。所述感测器件也可以包括支撑元件；被布置为产生响应于热传感器的受感测区域的温度检测信号的热传感器；保持元件，其可以支撑并热隔离所述热天线和所述热传感器；以及读出电路，其可以处理所述检测信号以提供关于由所述热天线直接转换为热的所述电磁辐射的信息。所述热天线和所述热传感器与所述支撑元件在空间上分隔。

Vehicle yaw rate correction

A control system or method for a vehicle references a camera and sensors to determine when an offset of a yaw rate sensor may be updated. The sensors may include a longitudinal accelerometer, a transmission sensor, a vehicle speed sensor, and a steering angle sensor. The offset of the yaw rate sensor may be updated when the vehicle is determined to be stationary by referencing at least a derivative of an acceleration from the longitudinal accelerometer. The offset of the yaw rate sensor may be updated when the vehicle is determined to be moving straight by referencing at least image data captured by the camera. Lane delimiters may be detected in the captured image data and evaluated to determine a level of confidence in the straight movement. When the offset of the yaw rate sensor is to be updated, a ratio of new offset to old offset may be used.

Process for determining state of a vehicle

A process for determining a stationary state of a vehicle includes providing a camera and a control having an image processor. Vehicle data is provided to the control by an accelerometer of the vehicle and by at least one of (i) a transmission sensor of the vehicle and (ii) a speed sensor of the vehicle. A determination that the vehicle is stationary is made when at least one of (i) the control determines a jerk value that is approximately zero for a selected duration of time and the control receives vehicle data indicating that the speed of the vehicle was approximately zero for the selected duration of time and (ii) the control determines a jerk value that is approximately zero for a selected duration of time and the control receives vehicle data indicating that the transmission of the vehicle was in ‘Park’ for the selected duration of time.

Method for vehicular control

A method for vehicular control includes providing a forward viewing camera, a yaw rate sensor, a longitudinal accelerometer, a speed sensor and a control system at the vehicle. While the vehicle is moving, an angular rotational velocity of the vehicle about a local vertical axis is determined, a yaw rate offset is determined, and a longitudinal acceleration is determined. A corrected yaw rate is determined responsive to the determined yaw rate offset of the yaw rate sensor and the determined longitudinal acceleration of the vehicle. The control system determines a projected driving path of the vehicle based at least in part on the determined corrected yaw rate. A hazard condition ahead of the vehicle in the projected driving path is determined at least in part responsive to detecting an object and to the projected driving path. The system automatically applies the brakes of the vehicle responsive to the determined hazard condition.

Vehicle vision system with yaw rate determination

A vision system for a vehicle includes a camera disposed at or proximate to an in-cabin portion of a windshield of the vehicle. The camera has a forward field of view to the exterior of the vehicle through the windshield of the vehicle. The camera is operable to capture image data. A control includes an image processor that is operable to process captured image data to determine lane delimiters present in the field of view of the camera. The control connects to a vehicle communication bus of the vehicle and receives vehicle data via the vehicle communication bus. Responsive at least in part to processing of captured image data by the image processor and to vehicle data received via the vehicle communication bus, the control determines a yaw rate. The control provides the determined yaw rate to a driver assistance system of the vehicle.