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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 55. Отображено 55.
20-11-2018 дата публикации

Optoelectronic device

Номер: US0010133094B1

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.

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31-03-2016 дата публикации

OPTICAL BRIDGE

Номер: US20160091665A1
Принадлежит:

An optical bridge for switching between a plurality of electrical chips, the optical bridge comprising: a passive optical router; and a plurality of Bridge Interface Chips optically connected to the passive optical router; each Bridge Interface Chip being connectable to one of the plurality of electrical chips to form a connection between that electrical chip and the passive optical router at which electrical signals from the electrical chip are converted into wavelength tunable modulated optical signals for transmission to the passive optical router and at which an optical signals from the passive optical router are converted into electrical signals to be received by the electrical chip; wherein each Bridge Interface Chip includes a wavelength tunable laser input and a modulator for modulating the wavelength tunable laser input to provide the wavelength tunable modulated optical signals. 1. An optical bridge for switching between a plurality of electrical chips , the optical bridge comprising:a passive optical router, an optical path through which is wavelength dependent; anda plurality of Bridge Interface Chips optically connected to the passive optical router; each Bridge Interface Chip being connectable to one of the plurality of electrical chips to form a connection between that electrical chip and the passive optical router;each Bridge Interface Chip including a wavelength tunable laser input and a modulator configured to convert electrical signals from the electrical chip into wavelength tunable modulated optical signals for transmission to the passive optical router; andeach Bridge Interface Chip including a photodiode configured to convert optical signals from the passive optical router into electrical signals to be received by the electrical chip.2. The optical bridge of claim 1 , wherein an output port of the passive optical router is directly optically connected to an input port of a Bridge Interface Chip of the plurality of Bridge Interface Chips.3. The ...

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23-04-2020 дата публикации

WAVEGUIDE MODULATOR STRUCTURES

Номер: US20200124878A1
Принадлежит:

A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction. 1. An active optical waveguide , comprising:a central waveguide region composed of an active material;a first vertical region on a first side of the central waveguide region, the first vertical region being at least partially doped;a second vertical region on a second side of the central waveguide region, the second vertical region being at least partially doped;a first doped lateral region adjacent to the first vertical region; anda second doped lateral region adjacent to the second vertical region, the doping in the second vertical region is of an opposite sense to the doping in the first vertical region,', 'the doping in the second doped lateral region is of an opposite sense to the doping in the first doped lateral region, and', 'the active material is Ge or SiGe., 'wherein2. An active optical waveguide according to claim 1 , wherein the first vertical region is p-doped and the second doped lateral region is n-doped.3. An active optical waveguide according to claim 1 , wherein the first vertical region is n-doped claim 1 , and the second doped lateral region is p-doped.4. An active optical waveguide according to claim 1 , further comprising:at least one electrical contact on the first doped lateral region, andat least one electrical contact on the second doped lateral region.5. An active optical waveguide according to claim 1 , wherein the vertical extent of the doping in the first vertical region exceeds the height of any doping in the second vertical region.6. An active optical waveguide according to claim 1 , ...

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22-12-2016 дата публикации

DETECTOR REMODULATOR AND OPTOELECTRONIC SWITCH

Номер: US20160373843A1
Принадлежит:

An optoelectronic packet switch comprising: switch input(s) for receiving optical packet signals; a passive optical router; a control unit; and a plurality of detector-remodulators (DRMs) configured to receive signals from the switch input(s) and to generate modulated optical signals for transmission to the input ports of the passive optical router. Each DRM comprising: detector(s) for converting an optical packet-signal received at the switch input(s) into an electrical packet-signal; modulator(s) for generating the modulated optical signals. Each modulator configured to: receive a wavelength-tuned input from a tunable laser; receive the electrical packet-signal from one of the detectors; and to generate a modulated optical signal at the tuned wavelength, the modulated signal containing the information of the electric packet-signal and the tuned wavelength chosen to select an output port of the passive optical router for the modulated optical signal; and an electronic circuit connecting each of the detector(s) to a corresponding modulator. 1. An optoelectronic packet switch comprising:one or more switch input(s) for receiving optical packet signals;a passive optical router having input ports and output ports, the optical paths between which are wavelength dependent; and one or more detectors for converting an optical packet signal received at the one or more switch input(s) into an electrical packet signal;', 'one or more modulators for generating the modulated optical signals, each modulator being configured to: receive, from a laser, an unmodulated optical signal having a wavelength; receive the electrical packet signal from one of the detectors; and to generate a modulated optical signal at the wavelength, the modulated optical signal containing the information of the electric packet signal and the wavelength being chosen to select a desired output port of the passive optical router for the modulated optical signal; and', 'an electronic circuit connecting each ...

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07-04-2020 дата публикации

Porous silicon sensor

Номер: US0010613033B2

A chemical sensor, including a porous optical waveguide. The loss or index of refraction, or both, of the porous waveguide is affected by the presence of one or more chemicals of interest.

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23-03-2017 дата публикации

DETECTOR REMODULATOR

Номер: US20170082876A1
Принадлежит:

A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide. 1. A detector remodulator comprising:a silicon on insulator (SOI) chip;a detector coupled to a first input waveguide; an SOI waveguide;', 'an active region, the active region comprising a multiple quantum well (MQW) region; and', 'a coupler for coupling the SOI waveguide to the active region;, 'an electroabsorption modulator, on the SOI chip, the electroabsorption modulator being coupled to a second input waveguide and to an output waveguide and comprising a transit waveguide coupling region;', 'a buffer waveguide coupling region; and', 'a taper region; and, 'the coupler comprisingan electrical circuit connecting the detector to the modulator;wherein the transit waveguide coupling region is configured to couple light between the SOI waveguide and the buffer waveguide coupling region; and the buffer waveguide coupling region is configured to couple light between the transit waveguide region and the active region via the taper region.2. The detector remodulator of claim 1 , wherein the taper region comprises a multi-segment mode expander.3. The detector remodulator of claim 2 , wherein the multiple quantum well region is a Ge/SiGe multiple quantum well region.4. The detector remodulator of claim 3 , wherein:the transit waveguide coupling region comprises a first portion of a transit waveguide; andthe buffer waveguide coupling region comprises a buffer waveguide located on top of a second portion of the transit ...

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26-02-2019 дата публикации

Waveguide modulator structures

Номер: US0010216059B2

An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).

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26-09-2023 дата публикации

Optical sensing module

Номер: US0011766216B2

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

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07-03-2024 дата публикации

OPTICAL ASSEMBLIES COMPRISING A PRISM

Номер: US20240077688A1
Принадлежит: Rockley Photonics Ltd

An optical assembly ( 100 ) for use in a wearable device is provided, the assembly ( 100 ) comprising: a prism ( 104 ), a photonic integrated chip, PIC ( 108 ), a substrate layer ( 106 ), and a lid ( 102 ); wherein the PIC ( 108 ) is mounted onto the substrate layer ( 106 ); the prism ( 104 ) comprising: (i) a first input/output surface ( 112 ) optically coupled to the PIC ( 108 ), and (ii) a second input/output surface ( 114 ) optically coupled to the lid ( 102 ), the second input/output surface ( 114 ) orientated perpendicularly to the first input/output surface ( 112 ), and wherein the prism ( 104 ) provides an optical path and reflects a percentage of light from the first input/output surface ( 112 ) to the second input/output surface ( 114 ). Methods of manufacturing such an optical assembly are also provided.

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13-11-2019 дата публикации

Electronic/photonic chip integration and bonding

Номер: GB0002532306A8
Принадлежит:

An optical waveguide device 1 has one or more photonic chips 2. A first portion of the photonic chip has an array of first components, such as photodetectors D1-D4, each having an optical input and an electrical output. A second portion has an array of second components, such as modulators M1-M4, configured to receive an electrical input. The optical waveguide device further also has an integrated circuit 3 which may be flip-mounted onto the photonic chip and forms an electrical bridge between the electrical outputs of the first components and respective electrical inputs of the second components. The integrated circuit is directly mounted onto the one or more photonic chips; and/or is located between the first portion of a photonic chip and the second portion of a photonic chip.

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19-10-2021 дата публикации

Waveguide modulator structures

Номер: US0011150494B2

A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.

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10-01-2019 дата публикации

OPTOELECTRONIC DEVICE

Номер: US20190011799A1
Принадлежит:

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb. 1. An optoelectronic device , comprising:a substrate;a regrown cladding layer, on the substrate;an insulating layer;an optically active region, above the regrown cladding layer;a first waveguide; anda second waveguide,wherein:the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region,the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb,the insulating layer is directly on the substrate, over a first region of the substrate,the regrown cladding layer is on the substrate, over a second region of the substrate, different from the first region of the substrate,the first waveguide is on the insulating layer,the second waveguide is in the optically active region,the substrate is a silicon substrate,the insulating layer is an oxide layer,the first waveguide is over the first region of the substrate and extends to a boundary between the first region of the substrate and the second region of the substrate,the second waveguide is over the second region of the substrate and extends to the boundary between the first region of the substrate and the second region of the substrate,the first waveguide is configured to support a first optical mode, andthe second waveguide is configured to support a second optical mode, coupled to the first optical mode.2. The optoelectronic device of ...

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02-08-2018 дата публикации

WAVEGUIDE MODULATOR STRUCTURES

Номер: US20180217469A1
Принадлежит:

An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s). 1. An optoelectronic device , comprising:a substrate;a Mach-Zehnder waveguide modulator, the Mach-Zehnder waveguide modulator comprising: a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion; andan epitaxial crystalline cladding layer, on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).2. An optoelectronic device according to claim 1 , wherein the junction region of each of the left and right optical ...

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22-01-2019 дата публикации

Optoelectronic device

Номер: US0010185203B1

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.

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01-10-2015 дата публикации

DETECTOR REMODULATOR

Номер: US20150277157A1
Принадлежит: ROCKLEY PHOTONICS LIMITED

A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide. 1. A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including:a detector coupled to a first input waveguide;a SiGe or homogeneous Si modulator coupled to a second input waveguide and an output waveguide; andan electrical circuit connecting the detector to the modulator;wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; andwherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide.2. The detector remodulator of claim 1 , wherein the first input waveguide is also arranged to lie within the same horizontal plane as the detector claim 1 , modulator claim 1 , second input waveguide and output waveguide.3. The detector remodulator of claim 1 , wherein the semiconductor junction of the modulation region is a p-n junction.4. The detector remodulator of claim 3 , wherein the p-n junction further comprises a first and second electrode claim 3 , the first electrode located directly above the p-doped region of the p-n junction and the second electrode located directly above the n-doped region of the p-n junction.5. The detector remodulator of claim 1 , wherein the semiconductor junction of the modulation region is a p-i-n junction.6. The detector remodulator of claim 5 , wherein the p-i-n junction further comprises a first claim 5 , ...

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23-11-2023 дата публикации

OPTICAL SENSING MODULE

Номер: US20230375525A1
Принадлежит: Rockley Photonics Ltd

An optical sensing module suitable for a gas phase sample, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: one or more lasers, each laser of the one or more lasers operating at a wavelength that is different from the wavelength of the others; one or more optical outputs for light originating from the one or more lasers, the optical output arranged such that the light interacts with the gas-phase sample; and one or more photodetectors configured to detect light after interaction with the gas-phase sample.

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07-02-2019 дата публикации

OPTOELECTRONIC DEVICE

Номер: US20190041667A1
Принадлежит: Rockley Photonics Ltd

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.

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06-12-2016 дата публикации

Detector remodulator

Номер: US0009513498B2

A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide.

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08-02-2024 дата публикации

MINIMALLY INVASIVE DEVICE WITH SPECTROPHOTOMETER

Номер: US20240041328A1
Принадлежит: Rockley Photonics Ltd

A minimally invasive spectrophotometric system. In some embodiments, the system includes a minimally invasive device and a spectrophotometer. The spectrophotometer may include: a transmitting fiber, a receiving fiber, and a head. The head of the spectrophotometer may include: a light source connected to the transmitting fiber and a photodetector connected to the receiving fiber. A portion of the transmitting fiber may be in an insertion tube of the minimally invasive device, and a portion of the receiving fiber may be in the insertion tube of the minimally invasive device. The head of the spectrophotometer may occupy a volume of less than 300 cubic centimeters.

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17-03-2016 дата публикации

DETECTOR REMODULATOR AND OPTOELECTRONIC SWITCH

Номер: US20160080844A1
Принадлежит: ROCKLEY PHOTONICS, LIMITED

An optoelectronic packet switch comprising: switch input(s) for receiving optical packet signals; a passive optical router; a control unit; and a plurality of detector-remodulators (DRMs) configured to receive signals from the switch input(s) and to generate modulated optical signals for transmission to the input ports of the passive optical router. Each DRM comprising: detector(s) for converting an optical packet-signal received at the switch input(s) into an electrical packet-signal; modulator(s) for generating the modulated optical signals. Each modulator configured to: receive a wavelength-tuned input from a tunable laser; receive the electrical packet-signal from one of the detectors; and to generate a modulated optical signal at the tuned wavelength, the modulated signal containing the information of the electric packet-signal and the tuned wavelength chosen to select an output port of the passive optical router for the modulated optical signal; and an electronic circuit connecting each of the detector(s) to a corresponding modulator. 1. An optoelectronic packet switch comprising:one or more switch input(s) for receiving optical packet signals;a passive optical router having input ports and output ports, the optical paths between which are wavelength dependent;a switch control unit; and one or more detectors for converting an optical packet signal received at the one or more switch input(s) into an electrical packet signal;', 'one or more modulators for generating the modulated optical signals, each modulator configured to: receive a wavelength tuned laser input from a tunable laser; receive the electrical packet signal from one of the detectors; and to generate a modulated optical signal at the tuned wavelength, the modulated optical signal containing the information of the electric packet signal and the tuned wavelength chosen to select a desired output port of the passive optical router for the modulated optical signal; and', 'an electronic circuit ...

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27-06-2023 дата публикации

Optical instrument and method for determining a wavelength of light generated by a light source, and optical system comprising the optical instrument

Номер: US0011686959B2

An optical instrument for determining a wavelength of light generated by a light source. The optical instrument may include a signal generator for generating a driving signal, a tunable optical filter device configured to receive the driving signal, the tunable optical filter device configured to diffract the light generated by the light source based on the driving signal, an optical detector device configured to detect a timing of maximum diffraction of light diffracted by the tunable optical filter device, and an analyzer configured to determine the wavelength of the light based the timing of maximum diffraction.

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19-09-2019 дата публикации

POROUS SILICON SENSOR

Номер: US20190285552A1
Принадлежит: Rockley Photonics Ltd

A chemical sensor, including a porous optical waveguide. The loss or index of refraction, or both, of the porous waveguide is affected by the presence of one or more chemicals of interest.

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06-09-2016 дата публикации

Detector remodulator and optoelectronic switch

Номер: US0009438970B2

An optoelectronic packet switch comprising: switch input(s) for receiving optical packet signals; a passive optical router; a control unit; and a plurality of detector-remodulators (DRMs) configured to receive signals from the switch input(s) and to generate modulated optical signals for transmission to the input ports of the passive optical router. Each DRM comprising: detector(s) for converting an optical packet-signal received at the switch input(s) into an electrical packet-signal; modulator(s) for generating the modulated optical signals. Each modulator configured to: receive a wavelength-tuned input from a tunable laser; receive the electrical packet-signal from one of the detectors; and to generate a modulated optical signal at the tuned wavelength, the modulated signal containing the information of the electric packet-signal and the tuned wavelength chosen to select an output port of the passive optical router for the modulated optical signal; and an electronic circuit connecting each of the detector(s) to a corresponding modulator.

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30-05-2017 дата публикации

Detector remodulator and optoelectronic switch

Номер: US0009668037B2

An optoelectronic packet switch comprising: switch input(s) for receiving optical packet signals; a passive optical router; a control unit; and a plurality of detector-remodulators (DRMs) configured to receive signals from the switch input(s) and to generate modulated optical signals for transmission to the input ports of the passive optical router. Each DRM comprising: detector(s) for converting an optical packet-signal received at the switch input(s) into an electrical packet-signal; modulator(s) for generating the modulated optical signals. Each modulator configured to: receive a wavelength-tuned input from a tunable laser; receive the electrical packet-signal from one of the detectors; and to generate a modulated optical signal at the tuned wavelength, the modulated signal containing the information of the electric packet-signal and the tuned wavelength chosen to select an output port of the passive optical router for the modulated optical signal; and an electronic circuit connecting each of the detector(s) to a corresponding modulator.

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24-08-2021 дата публикации

Optical modulators

Номер: US0011101256B2

An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.

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24-01-2017 дата публикации

Optical bridge

Номер: US0009551838B2

An optical bridge for switching between a plurality of electrical chips, the optical bridge comprising: a passive optical router; and a plurality of Bridge Interface Chips optically connected to the passive optical router; each Bridge Interface Chip being connectable to one of the plurality of electrical chips to form a connection between that electrical chip and the passive optical router at which electrical signals from the electrical chip are converted into wavelength tunable modulated optical signals for transmission to the passive optical router and at which an optical signals from the passive optical router are converted into electrical signals to be received by the electrical chip; wherein each Bridge Interface Chip includes a wavelength tunable laser input and a modulator for modulating the wavelength tunable laser input to provide the wavelength tunable modulated optical signals.

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12-04-2018 дата публикации

OPTOELECTRONIC DEVICE

Номер: US20180101082A1
Принадлежит:

An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region. 1. A detector remodulator comprising:a silicon on insulator (SOI) chip having a silicon substrate, an insulator layer and a topmost silicon layer;a detector coupled to a first input waveguide;a modulator, coupled to a second input waveguide and an output waveguide; andan electrical circuit connecting the detector to the modulator; 'a modulation region at which a semiconductor junction is set across the waveguide of the modulator, the junction comprising a first doped region and a second doped region;', 'wherein the modulator includes a waveguide including the electrical circuit is connected to a first electrical pad on a first side of the modulation region, the first electrical pad forming a contact directly to the first doped region,', 'the electrical circuit is connected to a second electrical pad on a second side of the modulation region, the second electrical pad forming a contact directly to the second doped region, and', 'the electrical circuit comprises a signal path from the detector to the modulator, the signal path having a portion in an integrated circuit; and wherein', 'the modulator is located at a portion of the SOI chip at which the topmost silicon layer and the insulator of the silicon on insulator chip have been replaced by a cladding layer on top of the substrate; the modulation region of the modulator comprising an optically active region, above the cladding layer; wherein the cladding layer has a refractive index which is less than a refractive index of the optically active ...

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03-09-2019 дата публикации

Optoelectronic device

Номер: US0010401656B2

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.

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09-05-2019 дата публикации

OPTICAL MODULATORS

Номер: US20190139950A1
Принадлежит: Rockley Photonics Ltd

An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.

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17-11-2022 дата публикации

OPTICAL INSTRUMENT AND METHOD FOR DETERMINING A WAVELENGTH OF LIGHT GENERATED BY A LIGHT SOURCE, AND OPTICAL SYSTEM COMPRISING THE OPTICAL INSTRUMENT

Номер: US20220365380A1
Принадлежит:

The invention refers to an optical instrument for determining a wavelength of light generated by a light source, comprising a signal generator for generating a modulation signal, a tunable optical filter device configured to receive the modulation signal, the tunable optical filter device configured to modulate the light generated by the light source based on the modulation signal, an optical detector device configured to detect a degree of modulation of light modulated by the tunable optical filter device, and an analyser configured to determine the wavelength of the light based the degree of modulation.

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24-11-2022 дата публикации

OPTICAL INSTRUMENT AND METHOD FOR DETERMINING A WAVELENGTH OF LIGHT GENERATED BY A LIGHT SOURCE, AND OPTICAL SYSTEM COMPRISING THE OPTICAL INSTRUMENT

Номер: US20220373829A1
Принадлежит:

An optical instrument for determining a wavelength of light generated by a light source. The optical instrument may include a signal generator for generating a driving signal, a tunable optical filter device configured to receive the driving signal, the tunable optical filter device configured to diffract the light generated by the light source based on the driving signal, an optical detector device configured to detect a timing of maximum diffraction of light diffracted by the tunable optical filter device, and an analyzer configured to determine the wavelength of the light based the timing of maximum diffraction. 1. An optical instrument for determining a wavelength of light generated by a light source , comprisinga signal generator for generating a driving signal,a tunable optical filter device configured to receive the driving signal, the tunable optical filter device configured to diffract the light generated by the light source based on the driving signal,an optical detector device configured to detect intensity as a degree of diffraction of the light diffracted by the tunable optical filter device, andan analyzer configured to determine the wavelength of the light based on the timing of the diffraction.2. The optical instrument of claim 1 , wherein the tunable optical filter device includes an acousto-optic tunable filter (AOTF).3. The optical instrument of claim 1 , wherein the signal generator generates the driving signal which is a frequency-modulated wave whose frequency is swept from a minimum frequency to a maximum frequency.4. The optical instrument of claim 3 , wherein the signal generator is configured to generate a trigger signal simultaneous to the generation of the driving signal frequency sweep for indicating a start of the driving signal frequency sweep.5. The optical instrument of claim 1 , wherein the signal generator is configured to be coupled to the light source claim 1 , the signal generator configured to supply a trigger signal to the ...

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14-06-2023 дата публикации

Optoelectronic device

Номер: EP3545357B1
Принадлежит: Rockley Photonics Ltd

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09-02-2023 дата публикации

System and method for positioning a sensor on a subject

Номер: US20230038906A1
Принадлежит: Rockley Photonics Ltd

A system and method for positioning a sensor on a subject. In some embodiments, the system includes an instrument holder, the instrument holder being configured to be secured to a subject, and to hold an instrument temporarily.

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04-01-2017 дата публикации

Detector remodulator and optoelectronic switch

Номер: EP3111261A2
Принадлежит: Rockley Photonics Ltd

A detector remodulator (DRM) comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide; and an optoelectronic packet switch comprising: one or more switch input(s) for receiving optical packet signals; a passive optical router having input ports and output ports, the optical paths between which are wavelength dependent; a switch control unit; and a plurality of detector remodulators (DRMs) configured to receive optical signals from the one or more switch input(s) and to generate modulated optical signals for transmission to the input ports of the passive optical router, each DRM comprising: one or more detectors for converting an optical packet signal received at the one or more switch input(s) into an electrical packet signal; one or more modulators for generating the modulated optical signals, each modulator configured to: receive a wavelength tuned laser input from a tunable laser; receive the electrical packet signal from one of the detectors; and to generate a modulated optical signal at the tuned wavelength, the modulated optical signal containing the information of the electric packet signal and the tuned wavelength chosen to select a desired output port of the passive optical router for the modulated optical signal; and an electronic circuit connecting each of the one or more detectors to a corresponding modulator; wherein each of the one or more modulators is a separate component from the tunable laser that provides its wavelength tuned laser input; and wherein the switch control unit ...

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24-11-2022 дата публикации

Optical sensing module

Номер: US20220370010A1
Принадлежит: Rockley Photonics Ltd

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

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26-08-2015 дата публикации

Detector remodulator

Номер: GB2523383A
Принадлежит: Rockley Photonics Ltd

The invention concerns a detector remodulator implemented on a silicon on insulator (SOI) waveguide platform. The detector remodulator is preferably used for performing wavelength conversion of optical signals. An input optical signal with a first wavelength is received on a first input waveguide 5. An optical source (e.g. a laser) 8 outputs light at a second wavelength into a second input waveguide 9. A modulator 3 driven by an electrical signal from the photodetector modulates light received on the second input waveguide to produce a modulated optical signal at the second wavelength on an output waveguide 6. An electrical circuit 4 connects the detector to the modulator. The photodetector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another. The modulator includes a modulation waveguide region (28, Fig. 2) at which a semiconductor junction (27a, 27b, 27c, Fig. 2) is set horizontally across the waveguide. The modulator may be an electro-absorption modulator (EAM), a Mach-Zehnder modulator (MZM), a Fabry-Perot resonator or a ring resonator.

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20-07-2023 дата публикации

Deformable membrane for speckle mitigation

Номер: US20230228989A1
Принадлежит: Rockley Photonics Ltd

A system with a deformable membrane for speckle mitigation. In some embodiments, the system includes a laser for producing laser light; a photodetector for detecting the laser light after interaction of the laser light with a sample; and a silicon deformable membrane, for modulating the phase of the laser light.

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25-05-2023 дата публикации

Deformable membrane for speckle mitigation

Номер: WO2023089129A1
Принадлежит: Rockley Photonics Limited

A system, comprising: a laser (105) for producing laser light; a photodetector (115) for detecting the laser light after interaction of the laser light with a sample (110); and a silicon deformable membrane (205), for modulating the phase of the laser light.

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05-03-2019 дата публикации

Optoelectronic device

Номер: US10222677B2
Принадлежит: Rockley Photonics Ltd

An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

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25-04-2024 дата публикации

Optical sensing module

Номер: US20240130677A1
Принадлежит: Rockley Photonics Ltd

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

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01-06-2023 дата публикации

Photonic integrated chip

Номер: WO2023094887A1
Принадлежит: Rockley Photonics Limited

An optical sensor for spectroscopic analysis of a sample, the optical sensor comprising: a photonic integrated chip (PIC) for providing light to the sample, the PIC comprising: one or more laser(s) designed to operate at one or more respective predetermined wavelength(s), each of the one or more laser(s) having an output that is optically coupled to an optical output of the PIC; and a monitor located on the PIC for determining the wavelength of the optical output; the optical sensor further comprising: a detector for collecting a spectrum from the sample; and one or more processors configured to: compare the wavelength of the laser(s) at the optical output with each of their respective predetermined wavelength(s); and if a deviation above a certain threshold is detected between the wavelength of the laser(s) and the predetermined wavelength(s), adapt the collected spectrum to generate a reconstructed spectrum; and use one or more datapoints from the reconstructed spectrum for the spectroscopic analysis.

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22-02-2024 дата публикации

Wearable device

Номер: WO2024038319A1
Принадлежит: Rockley Photonics Limited

A wearable device. In some embodiments, the wearable device includes: a sensing module; and a strap attached to the sensing module, the wearable device being configured to be worn by a user, with a lower surface of the sensing module in contact with the user, the strap extending over an upper surface of the sensing module.

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14-12-2023 дата публикации

Wearable device

Номер: US20230397818A1
Принадлежит: Rockley Photonics Ltd

A wearable device. In some embodiments, the wearable device includes: a sensing module; and a strap attached to the sensing module, the wearable device being configured to be worn by a user, with a lower surface of the sensing module in contact with the user, the strap extending over an upper surface of the sensing module.

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29-06-2023 дата публикации

Photonic integrated chip

Номер: US20230204496A1
Принадлежит: Rockley Photonics Ltd

An optical sensor for spectroscopic analysis of a sample, the optical sensor comprising: a photonic integrated chip (PIC) for providing light to the sample, the PIC comprising: one or more laser(s) designed to operate at one or more respective predetermined wavelength(s), each of the one or more laser(s) having an output that is optically coupled to an optical output of the PIC; and a monitor located on the PIC for determining the wavelength of the optical output; the optical sensor further comprising: a detector for collecting a spectrum from the sample; and one or more processors configured to: compare the wavelength of the laser(s) at the optical output with each of their respective predetermined wavelength(s); and if a deviation above a certain threshold is detected between the wavelength of the laser(s) and the predetermined wavelength(s), adapt the collected spectrum to generate a reconstructed spectrum; and use one or more datapoints from the reconstructed spectrum for the spectroscopic analysis.

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11-07-2024 дата публикации

Optical sensing module

Номер: US20240225540A9
Принадлежит: Rockley Photonics Ltd

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

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08-01-2003 дата публикации

Testing of an integrated optical device

Номер: AU2002311467A1
Принадлежит: Bookham Technology PLC

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25-09-2024 дата публикации

Deformable membrane for speckle mitigation

Номер: EP4433804A1
Принадлежит: Rockley Photonics Ltd

A system, comprising: a laser (105) for producing laser light; a photodetector (115) for detecting the laser light after interaction of the laser light with a sample (110); and a silicon deformable membrane (205), for modulating the phase of the laser light.

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12-06-2024 дата публикации

System and method for positioning a sensor on a subject

Номер: EP4380432A1
Принадлежит: Rockley Photonics Ltd

A system and method for positioning a sensor on a subject. In some embodiments, the system includes an instrument holder, the instrument holder being configured to be secured to a subject, and to hold an instrument temporarily.

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01-10-2024 дата публикации

Optical assemblies comprising a prism

Номер: US12105333B2
Принадлежит: Rockley Photonics Ltd

An optical assembly (100) for use in a wearable device is provided, the assembly (100) comprising: a prism (104), a photonic integrated chip, PIC (108), a substrate layer (106), and a lid (102); wherein the PIC (108) is mounted onto the substrate layer (106); the prism (104) comprising: (i) a first input/output surface (112) optically coupled to the PIC (108), and (ii) a second input/output surface (114) optically coupled to the lid (102), the second input/output surface (114) orientated perpendicularly to the first input/output surface (112), and wherein the prism (104) provides an optical path and reflects a percentage of light from the first input/output surface (112) to the second input/output surface (114). Methods of manufacturing such an optical assembly are also provided.

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