Elektronische Anordnung mit einem Lichtübertragungssystem.

PHOTONISCHER INTEGRIERTER DETEKTOR MIT MEHREREN ASYMMETRISCHEN WELLENLEITERN

Interposer beam expander chip

Optical waveguide 105 is on a top surface of the photonic chip and has a two ends 116, 118 configured to support two optical modes having a mode centres. A tapered portion of the waveguide has a tapered mesa (610, figure 6) and a tapered central ridge (620, figure 6). A hard stop (710, figure 7) has a flat surface parallel to a portion of the waveguide at the second end of the waveguide. the height of the second mode centre above the flat surface of the hard stop is greater than zero and less than the thickness of the optical waveguide at the second end. An assembly with overlapping photonic chips may be provided (see figure 8a). A polished surface may also be provided coplanar with a facet on the second end 118 of the waveguide.

Photstructurable body and process for treating glass and/or a glass-ceramic

Process of forming small diameter rods and tubes

Process of forming small diameter rods and tubes

A method for the production of a photonic device comprising providing a substrate, forming in the substrate substantially straight pores, lining or filling the pores with a material, and removing part but not all of the substrate materials so that an array remains of tubes or rods of material. The lining material is deposited by forming a precursor solution of the material to be deposited into fine droplets and contacting the substrate with the droplets.

Translucent ceramic with high refractive index

A ceramic material powder for a translucent ceramic is moulded with a binder and the resulting green compact is embedded in a ceramic powder containing at least one element in common with the green compact. The compact embedded in the ceramic powder is heated in an oxidising atmosphere to remove the binder. Thereafter the compact is fired in an oxygen concentration higher than that in the oxidising atmosphere to yield a translucent ceramic. The translucent ceramic has a refractive index of at least 1.9 and is paraelectric, having a perovskite crystal phase as a principal crystal phase. The translucent ceramic may be represented by Formula I: Ba (SnuZr1-u)xMgyTaz vOw, Formula II: Ba(ZrxMgyTaz)vOw or Formula III: Ba (SnuZr1-u)x(ZntMg1-t)yNbz vOw. The ceramic may be used as an optical part.

Mems steering mirrors for applications in photonic integrated circuits

METHOD OF MAKING A MULTILAYER CERAMIC MODULE

... 1529294 Multilayer ceramic or ceramic glass module INTERNATIONAL BUSINESS MACHINES CORP 8 Sept 1977 [18 Oct 1976] 37506/77 Headings C1J and C1M A method of making a multilayer ceramic or ceramic glass module structure comprises providing a plurality of ceramic or ceramic glass green sheets, selectively punching holes in said green sheets, applying a glass paste to the green sheets in the desired conductor pattern and stacking, laminating and sintering the green sheets into a package so that the ceramic or ceramic glass fuses around the glass, which fuses to form clear channels. Examples of ceramic or ceramic glass materials are (i) eucryptite and borosilicate glass, (ii) anorthite and borosilicate glass, (iii) fused silica, or (iv) alkali zinc borosilicate glass. Examples of glass paste are (i) potash lead glass, (ii) potash barium lead glass, (iii) amorphous titanium silicate, or (iv) potash lead glass. The sintering process may be accomplished first in an atmosphere of a gas of small ...

Method of fabricating an optoelectronic component

INTEGRATE-OPTICAL MULTIPLEXER/DEMULTIPLEXER

MULTILEVEL OPTICAL STRUCTURES

TRANSVERSE ELECTROMAGNETIC WAVE ARRANGEMENT AND INTEGRATED OPTICS WITH MANUFACTURING PROCESSES

CONNECTION OF MATERIALS AT LOW TEMPERATURES

PHOTONI INTEGRATED DETECTOR WITH SEVERAL ASYMMETRICAL TRANSVERSE ELECTROMAGNETIC WAVES

WAVEGUIDES ASSEMBLED FOR TRANSVERSE-TRANSFER OF OPTICAL POWER

SPIRAL WAVEGUIDE SLOW WAVE RESONATOR STRUCTURE

An optical microresonator includes microcylinder and spiral resonant waveguide formed on the microcylinder that optically couples light from an optical source waveguide to the microcylinder and slows light propagating along the microcylinder. A coupling element, for example, a diffraction grating can be operative with the resonant waveguide structure and configured to meet a desired phase matching. A second microcylinder having a spiral resonant waveguide formed thereon can be positioned adjacent to the spiral resonant waveguide formed on the first microcylinder for coupling therewith. The spiral resonant waveguides on first and second microcylinders can be configured for slowing light propagating along the microcylinder.

A PHOTONIC RESONANT MOTOR

A photonic motor is disclosed that comprises: at least one optical radiation input; a first optical waveguides arrangement, including at least one first optical resonator lying in a first plane to form a static part of the motor in a predetermined coordinate reference system; an excitation optical waveguides arrangement coupled to the first optical waveguides arrangement at a predetermined optical mode coupling distance to the at least one first optical resonator and configured to receive at least one optical radiation of predetermined wavelength from the at least one optical radiation input and to optically couple the optical radiation to the at least one first optical resonator; at least a second optical waveguides arrangement, including at least one second optical resonator lying in a second plane parallel to the first plane at a predetermined stacking distance perpendicular to the planes, the second optical waveguides arrangement being configured to move in the second plane with respect ...

RECONFIGURABLE DYNAMIC STRUCTURE REINFORCEMENT SYSTEM USING NANOPARTICLE EMBEDDED SUPRAMOLECULAR ADHESIVE

Methods, systems and apparatuses are disclosed comprising a tunable multilayered array reinforcement system having a supramolecular adhesive embedded with nanoparticles that are reoriented on-demand in response to or in advance of vibrational effects in a moving or stationary structure.

PHOTON RESONANCE ENGINE

OPTICAL CIRCUIT BOARD SHEET AND PHOTOELECTRIC HYBRID BOARD SHEET PROVIDED WITH SAME

Photonic system and method of manufacturing the same

PHOTONIC INTEGRATED CIRCUIT AND METHOD OF MANUFACTURE

PHOTONIC CHIP HAS INTEGRATED COLLIMATING STRUCTURE

INTEGRATED PHOTONIC DEVICE ENHANCED OPTICAL COUPLING

광전기 혼재 모듈

... 본 발명은, 그 자체의 내절성(耐折性)이 우수하면서, 광소자의 실장성도 우수한 광전기 혼재 모듈을 제공한다. 이 광전기 혼재 모듈은, 광도파로(W)의 언더클래드층(1)의 표면에, 광로용 코어(2)에 더하여, 그 광로용 코어(2)의 양측에 거리를 두고, 비광로용 더미 코어(8)가 돌출 설치되어 있고, 그 더미 코어(8)의 정상면에, 실장용 패드(4a)를 갖는 전기 회로(4)가 형성된 것으로 되어 있다. 오버클래드층(3)은, 광로용 코어(2)의 측면 및 정상면을 따라 그 코어(2)를 피복한 상태로 볼록 형상으로 형성되어 있다. 그리고, 비광로용 더미 코어(8)의 탄성률은, 언더클래드층(1)의 탄성률 및 오버클래드층(3)의 탄성률보다 높게 설정되어 있다. 실장용 패드(4a)에 실장된 광소자(5)는, 볼록 형상의 오버클래드층(3) 위에 위치 결정되어 있다.

Manufacturing method of optical wiring printed board and optical wiring printed circuit board

This object aims to provide a manufacturing method of an optical wiring unit and an optical connection unit of an optical wiring printed board that sends a high speed optical signal transmitted and received between chips or boards in an apparatus such as a sending device and an optical wiring printed circuit board that processes transmitted and received optical signals all together on the board. The manufacturing method of the optical wiring printed board forms a pattern of a core member (13) of a mirror (22) on a clad layer (11) and at the same time an alignment mark pattern (14) at an arbitrary position on the clad layer (11) by using the core member (13), respectively. The manufacturing method carries out an alignment with the alignment mark (14), forms a slope portion and a concave portion (23) by physically cutting the core member (13), forms a reflective metallic film (18) on the front surface of the slope portion by coating, then carries out an alignment with the alignment mark ( ...

INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

POST-FORMATION FEATURE OPTIMIZATION

A method of optimizing a feature, defined by a wall (3806) in a wafer material (3800), to an accuracy of better than 1 micron involves treating the wall with a reactive gas, by exposing the wall to the reactive gas, to cause the wall to become a cladding material (3808) and expand outwards from the wall in a defined, uniform manner until a desired size for the feature is achieved. An alternative method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron involves depositing a base material on at least part of the wall to facilitate plating of a material on the wall, on top of the base material, in a defined, uniform manner, and plating the at least part of the wall with the material until a desired size for the feature is achieved.

MULTIPLE-CORE PLANAR OPTICAL WAVEGUIDES AND METHODS OF FABRICATION AND USE THEREOF

A multiple-core optical waveguide comprises: a substrate; lower and upper waveguide core layers; a waveguide core between the upper and lower waveguide core layers; upper and lower cladding; and middle cladding between the upper and lower waveguide core layers substantially surrounding the waveguide core. Each of the lower, middle, and upper claddings has a refractive index less than refractive indices of the lower waveguide core layer, the upper waveguide core layer, and the waveguide core. Along at least a given portion of the optical waveguide, the upper and lower waveguide core layers extend bilaterally substantially beyond the lateral extent of a propagating optical mode supported by the optical waveguide, the lateral extent of the supported optical mode being determined at least in part by the width of the waveguide core along the given portion of the optical waveguide.

Stackable optoelectronics chip-to-chip interconnects and method of manufacturing

An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The packaged chip includes semiconductor die and its package based on the ball-grid array or chip-scale-package. The O-E board includes the optoelectronics components and multiple electrical contacts on both sides of the O-E substrate. The waveguide board includes the electrical conductor transferring the signal from O-E board to PCB and the flex optical waveguide easily stackable onto the PCB to guide optical signal from one chip-to-other chip. Alternatively, the electrode can be directly connected to the PCB instead of including in the waveguide board. The chip-to-chip interconnections system is pin-free and compatible ...

Translucent ceramic, method of producing the same and optical devices

A ceramic material powder for a translucent ceramic is molded with a binder, and the resulting green compact is embedded in a ceramic powder having the same composition with the ceramic material powder. After removing the binder, the green compact embedded in the ceramic powder is fired in an atmosphere having an oxygen concentration higher than that in the removal procedure of the binder and thereby yields a translucent ceramic represented by Formula I: Ba{(SnuZr1-u)xMgyTaz}vOw, Formula II: Ba(ZrxMgyTaz)vOw or Formula III: Ba{(SnuZr1-u)x(ZntMg1-t)yNbz}vOw. The translucent ceramic has a refractive index of 1.9 or more and is paraelectric.

Three-dimensional periodic structure, functional element including the same, and light-emitting device

A three-dimensional periodic structure exhibiting a complete photonic band gap in a wide wavelength range and being readily produced, as well as a functional element including the same, is provided. In the three-dimensional periodic structure exhibiting a photonic band gap according to the present invention, layers composed of a plurality of square columns spaced apart by a predetermined interval are stacked sequentially with additional layers therebetween, rectangular parallelepipeds contained in the additional layers are disposed at the positions corresponding to the intersections of the square columns, and 1.21≦W1/W≦2.39 and W/W1 Подробнее

Planar layer with optical path

A channel is created within a planar layer. At least a portion of an optical path is formed within the channel. An optical core medium may be deposited into the channel. In various embodiments, reflective layers are deposited within and over the channel to form the optical path. In another embodiment, a photosensitive sheet is exposed to an optical path mask in the presence of an optical source to define an optical path lying within the plane of the sheet.

Rib optical waveguide and method of manufacturing the same

On a substrate (1), a core layer (2) is formed such that the core layer (2) includes a rib section (2a) fabricated to be integral therewith. The core layer (2) and the rib section (2a) are formed with a liquid material to be solidified under an energy irradiation, for example, a UV-setting resin. A clad layer (3) is disposed on the core layer (2). A buffer layer (4) is formed between the core layer (2) and the substrate (1).

Multi-level waveguide

A multi-level waveguide to transmit light through a series of substrates. The multi-level waveguide is made up of stacked substrates, each containing a two dimensional array of transparent material filled vias. Transparent materials such as optical fiber, cladding, and gas may be used to provide a pathway for light. Optionally, a conductive layer may be deposited on a substrate in the multi-level waveguide. The conductive layer can then interact with the multi-level waveguide through light detecting devices such as photodetectors.

Multimode interference coupler, multi-layer optical planar waveguide using the same and method of manufacturing the same

The present invention relates to a multi-layer optical planar waveguide which is vertically coupled using multimode-interference couplers and to the method of manufacturing the same. The purpose of this invention is to increase the degree of integration on the multi-layer optical planar waveguide by applying the concept of via holes of the multi-layer printed circuit board (MLPCB) used in electronic circuits to the optical waveguide devices. According to the present invention, particularly, a multimode interference coupler of a stepped structure has the higher coupling ratio at relatively short length of interference than the usual multimode interference coupler. The present invention can implement a multimode interference coupler at a specialized spot while reducing evanescent field interference between the upper and lower optical waveguides out of the spot by separating the layers enough.

Optical path length modulator

An optical integrated circuit comprises an optical substrate and an optical waveguide supported by the substrate. A transducer is incorporated into the optical integrated circuit and coupled to the optical substrate. The transducer comprises a region of piezo-electric material and a set of electrodes for applying a voltage to the piezo-electric material for selectively causing the deformation of the piezo-electric material so as to alter the optical path length of the waveguide.

Fabrication of stacked photonic lightwave circuits

We propose a technique for fabricating stacked photonic lightwave circuits (PLCs), with both high and low refractive index steps, comprising the use of etched PECVD dielectric layers for the light guiding structures and which are surrounded and separated by an interlayer PLC cladding (IPC) comprising a non-conformal layer of sol-gel, whose composition, refractive index and thickness can be tailored to the requirements of the device.

Multimode interference coupler, multi-layer optical planar waveguide using the same and method of manufacturing the same

The present invention relates to a multi-layer optical planar waveguide which is vertically coupled using multimode-interference couplers and to the method of manufacturing the same. The purpose of this invention is to increase the degree of integration on the multi-layer optical planar waveguide by applying the concept of via holes of the multi-layer printed circuit board (MLPCB) used in electronic circuits to the optical waveguide devices. According to the present invention, particularly, a multimode interference coupler of a stepped structure has the higher coupling ratio at relatively short length of interference than the usual multimode interference coupler. The present invention can implement a multimode interference coupler at a specialized spot while reducing evanescent field interference between the upper and lower optical waveguides out of the spot by separating the layers enough.

Movement actuator/sensor systems

A movement sensor comprising an elongate object, comprising a piezoelectric material, having an anchored end that is anchored to a base, and an unanchored end which is free to move in at least two degrees of freedom and to which a force is applied, the unanchored end of the elongated object being configured to move in response to the applied force. A plurality of electrodes are disposed on the elongate object and are configured to cooperate with the elongate object in producing signals usable to determine the magnitude and direction of the movement of the unanchored end due to the applied force. Sensing circuitry is electrically coupled to the electrodes and is configured for processing the signals from the electrodes so as to determine a magnitude and a direction of movement and produce a signal indicative of said magnitude and direction.

Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

Electro-optically active device

A silicon based electro-optically active device and method of producing the same, the device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active stack within a cavity of the SOI waveguide; and a channel between the electro-optically active stack and the SOI waveguide; wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

Process flow for fabricating integrated photonics optical gyroscopes

Aspects of the present disclosure are directed to configurations of compact ultra-low loss integrated photonics-based waveguides for optical gyroscope applications, and the methods of fabricating those waveguides for ease of large scale manufacturing. Four main process flows are described: (1) process flow based on a repeated sequence of oxide deposition and anneal; (2) chemical-mechanical polishing (CMP)-based process flow followed by wafer bonding; (3) Damascene process flow followed by oxide deposition and anneal, or wafer bonding; and (4) CMP-based process flows followed by oxide deposition. Any combination of these process flows may be adopted to meet the end goal of fabricating optical gyroscope waveguides in one or more layers on a silicon substrate using standard silicon fabrication technologies.

Semiconductor structure and manufacturing method of the same

A semiconductor structure is disclosed. The semiconductor structure includes: a substrate and a gate element over the substrate. The gate element includes: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; and a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode. A manufacturing method of the same is also disclosed.

Metal-free monolithic epitaxial graphene-on-diamond PWB with optical waveguide

According to some embodiments, an apparatus includes a circuit board made of polycrystalline diamond. The circuit board is formed by thermolysis of layers of a preceramic polymer. A plurality of tubes are formed within the circuit board and comprise a plurality of terminations at one or more surfaces of the circuit board. Each tube comprises a layer of graphene that is operable to permit each tube to conduct electrical current. Each layer of graphene is formed by thermolysis of the polycrystalline diamond circuit board at a temperature greater than or equal to 900 degrees Celsius. The apparatus also includes a plurality of optical waveguides formed within the circuit board. Each optical waveguide comprises a core of polycrystalline silicon carbide surrounded by polycrystalline diamond. The polycrystalline diamond is formed by thermolysis of poly(hydridocarbyne) and the silicon carbide is formed by thermolysis of poly(methylsilyne).

Method for fabricating optical devices by assembling multiple wafers containing planar optical waveguides

A method for fabricating optical devices comprises the steps of preparing a first substrate wafer with at least one buried optical waveguide on an approximately flat planar surface of the substrate and a second substrate wafer with at least a second buried optical waveguide. The waveguides so formed may be straight or be curved along the surface of the wafer or curved by burying the waveguide at varying depth along its length. The second wafer is turned (flipped) and bonded to the first wafer in such a manner that the waveguides, for example, may form an optical coupler or may crossover one another and be in proximate relationship along a region of each. As a result, three dimensional optical devices are formed avoiding conventional techniques of layering on a single substrate wafer. Optical crossover angles may be reduced, for example, to thirty degrees from ninety degrees saving substrate real estate. Recessed areas may be provided in one or the other substrate surface reducing crosstalk ...

Optical interconnection system and method

An optical interconnection system and method are provided. The system includes two or more basic components that are stacked and interconnected. The basic component includes an optical network layer and an electrical layer, where in each basic component, the optical network layer is electrically interconnected with the electrical layer, and the optical network layer of each basic component is optically interconnected with an optical network layer of an adjacent basic component, and through optical interconnection in three-dimensional space, a limitation on a quantity of stacked electrical layers is reduced, and efficiency of signal transmission is increased.

THREE-DIMENSIONAL OPTICAL SWITCH

A 3D optical switch for transferring an optical signal between a plurality of layers of an optical integrated circuit, which comprises: a first optical coupler for distributing the optical signal input to a first optical waveguide deployed in a first layer among the plurality of layers to a second optical waveguide deployed in a second layer different from the first layer; a phase shifter for changing a phase of a first optical signal in the first optical waveguide passing through the first optical coupler and a phase of a second optical signal in the second optical waveguide distributed by the first optical coupler; and a second optical coupler for combining the first optical signal of which the phase is changed and the second optical signal of which the phase is changed is provided.

FRONTSIDE COUPLED WAVEGUIDE WITH BACKSIDE OPTICAL CONNECTION

A method of manufacturing a device includes forming an optical coupler having a first end contacting a front side of a semiconductor substrate and a second end contacting an optical waveguide on an insulator layer on the substrate. The optical coupler is curved between the first end and the second end. The optical coupler is configured to change a direction of travel of light from a first direction at the first end to a second direction at the second end.

ISOLATOR, LIGHT SOURCE DEVICE, OPTICAL TRANSMITTER, AND OPTICAL AMPLIFIER

An isolator includes a first waveguide and a second waveguide on a substrate having a substrate surface, the first waveguide and the second waveguide located along the substrate surface and overlapping each other as viewed from the substrate. The first waveguide and the second waveguide each include a core and a clad. The core has a first surface facing the substrate surface, and a second surface opposite to the first surface. The clad contacts the first surface and the second surface of the core. The first waveguide has a first end and a second end, and has a port for input and output of electromagnetic waves at each of the first end and the second end. The core of the second waveguide includes a non-reciprocal member in at least one part of a cross section intersecting a direction in which the second waveguide extends.

Multilevel semiconductor device and structure with electromagnetic modulators

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the first level includes crystalline silicon; an oxide layer disposed between the first level and the second level; and a plurality of electromagnetic modulators, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

OPTICAL MODULE AND MANUFACTURING METHOD THEREOF

Embodiments of the present invention disclose an optical module manufacturing method, including: forming a first waveguide layer and a second waveguide layer on a first substrate and a second substrate respectively, or forming a first waveguide layer and a second waveguide layer on a first surface of the first substrate and a second surface of the first substrate respectively; disposing the first substrate on the second substrate; disposing a filter at an end of the first waveguide layer and the second waveguide layer, so that the filter is aligned with the second waveguide layer; and disposing a prism on the filter, so that a first reflective surface of the prism is aligned with the first waveguide layer, and the second reflective surface is aligned with the second waveguide layer. The embodiments of the present invention further disclose an optical module. According to the foregoing technical solutions, Z-direction space is fully utilized, thereby reducing the width of an optical channel ...

MONOLITHIC THREE-DIMENSIONAL STRUCTURES

Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate (10) through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer (14) of photoresist material is spun onto a substrate (10) surface (18) and is exposed (26) in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer (30) of photoresist material is deposited and is also exposed (32) in a desired pattern. Subsequent layers (40,52,64) spun onto the top surface of prior layers (14,30) and exposed (44,54,66), and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure (22).

Movement actuator/sensor systems

A movement actuator includes an elongate filament made of a flexible material, and a strip of shape memory alloy disposed on the surface of one side of the filament. The shape memory alloy is responsive to actuation signals, heat or electrical signals, for changing its shape and when its shape changes, it causes the filament to move, i.e., bend, to accommodate the change in shape of the alloy. Also included is a signal supply device for selectively applying heat signals or electrical current to the strip of shape memory alloy to cause the alloy to change its shape and cause the filament to bend. Other patterns for the shape memory alloy could be disposed on the filament to cause other kinds of movements. For example, a helical pattern of the shape memory alloy about the filament would cause the filament to twist when the helical pattern were caused to shorten or lengthen. ...

Integrated-optical multiplex-demultiplex module for optical message transmission

A multiplex-demultiplex module having a laser diode and a strip waveguide leading from said laser diode being disposed on a first surface of a substrate and the waveguide extends to an out-coupling and in-coupling location characterized by a single combined grating being arranged on the first surface of the substrate having its grid lines extending perpendicular to the direction of radiation guided in the waveguide and dimensioned so that it will not influence the laser emissions of a first wavelength from the laser diode but will steer radiation supplied from an in-coupling location and having a second wavelength differing from the first wavelength through the substrate onto a photo diode located under the opposite surface of the substrate. The grating thus acts as both a frequency-selective and a diffracting grating and replaces the two gratings in previously known devices.

DIE FIRST FAN-OUT ARCHITECTURE FOR ELECTRIC AND OPTICAL INTEGRATION

An electronic device and associated methods are disclosed. In one example, the electronic device includes a photonic integrated circuit and an in situ formed waveguide. In selected examples, the electronic device includes a photonic integrated circuit coupled to an electronic integrated circuit, in a glass layer, where a waveguide is formed in the glass layer.

THREE-DIMENSIONAL PERIODIC STRUCTURE, FUNCTIONAL ELEMENT HAVING THE SAME, AND LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a three-dimensional periodic structure exhibiting a complete photonic band gap over a wide wavelength band and being readily manufactured, and to provide a functional element including the same. SOLUTION: In the three-dimensional periodic structure exhibiting a photonic band gap, layers constituted of a plurality of square columns arrayed apart by a prescribed interval are successively laminated via additional layers, rectangular parallelepipeds included in the additional layers are arranged at positions, corresponding to the intersections of the square columns, and 1.21≤W1/W≤2.39 and W/W1 Подробнее

INTEGRIERT-OPTISCHER MULTIPLEXER/DEMULTIPLEXER

Stell- und Sensorsysteme

Interposer beam expander chip

A photonic subsystem

Interposer beam expander chip

Photstructurable body and process for treating glass and/or a glass-ceramic

Optical coupler with three waveguides and two gratings

An optical coupler comprises an input waveguide 10, an intermediate waveguide 30, an output waveguide 20, a first grating 31 situated between the input and Intermediate waveguides, and a second grating 32 situated between the intermediate and output waveguide such that, in use, light propagating in the input waveguide is coupled into the Intermediate waveguide with the assistance of the first grating, and thence is coupled into the output waveguide with the assistance of the second grating. The coupler is a directional coupler, in particular a dual grating-assisted directional coupler, and may be used to couple light between an optical fibre and an integrated semiconductor device, or between dissimilar waveguides. Substrate 40 and isolation layer 41 are shown.

Waveguide Structure

Manufacturing a semiconductor structure

Stress-relief structure for photonic integrated circuits

A structure 100 for relieving mechanical stress includes a substrate 101, an indentation 130 formed in the substrate and a photonic layer 105 formed on the substrate. A depth 131 of the indentation may be equal to or larger than a thickness of the photonic layer and a width 132 of the indentation may be less than twice the thickness of the photonic layer. The photonic layer may include a continuous layer 110 formed on a discontinuous layer 120, the continuous layer having a first thickness and the discontinuous layer having a second thickness and being formed within the indentation. The continuous layer and the discontinuous layer may include the same material. The width of the indentation may be twice the second thickness. The first thickness may be < 0.5 micron. The depth may be ≥ 1.2 microns and the width may be ≥ than 0.9 microns. The indentation may be ≥ 20 or 100 microns long. A dicing line may include a first series of these structures aligned on a straight line in a first direction ...

POSITION AND SENSOR SYSTEMS

INTERNALLY CONNECTION DREIDIMENSIONELLE CIRCUIT STRUCTURE OF HIGHER ONES DENSITY

PHOTO NICHE INTEGRATED ELEMENTS WITH SEVERAL LEVELS

INTEGRATED RESONATOR MATRIX FOR WAVELENGTHSELECTIVE SEPARATION AND/OR JOINING CHANNELS IN THE FREQUENCY RANGE OF THE OPTICAL COMMUNICATIONS TECHNOLOGY.

Optical microcavity resonator sensor

METHOD AND DEVICE FOR LITHOGRAPHICALLY PRODUCING A TARGET STRUCTURE ON A NON-PLANAR INITIAL STRUCTURE

The invention relates to a method and to a device for lithographically producing a target structure (030) on a non-planar initial structure (010) by irradiating a photoresist (100) with at least one lithography beam (060). The method comprises the following steps: a) sensing the topography (020) of a surface of a non-planar initial structure (010); b) using at least one test parameter for the lithography beam (060) and determining the interaction of the lithography beam (060) with the initial structure (010) and the change caused thereby in the lithography beam (060) and/or in the target structure (030) to be produced; c) determining at least one correction parameter for the lithography beam (060) in such a way that the change in the lithography beam (060) and/or in the target structure (030) to be produced caused by the interaction of the lithography beam (060) with the initial structure (010) is reduced; and d) producing the desire target structure (030) on the initial structure (010) ...

METHOD FOR FABRICATION OF PRECISION MINIATURE GLASS CIRCUITS

PHOTONIC CHIP WITH INTEGRATED COLLIMATION STRUCTURE

L'invention porte sur la mise en forme de faisceaux optiques en entrées/sorties d'une puce photonique et l'élargissement spectral de la lumière couplée à cette puce. La puce photonique(1) comprend une couche de guidage de la lumière (12) supportée par un substrat (10). La puce inclut une structure de guidage de la lumière en silicium (121) et un réseau decouplage surfacique (122). La puce photonique présente une face avant (F1) du côté réseau de couplage surfacique (122)et une face arrière (F2) du côté du substrat (10). Une structure de collimation réfléchissante (16) est intégrée au niveau de la face arrière (F2) pour modifier la taille de mode d'un faisceau de lumière incident. Le réseau de couplage surfacique (122) est configuré pour recevoir de la lumière depuis la structure de guidage de la lumière (121) et formerun faisceau de lumière dirigé vers la structure de collimation réfléchissante (15). L'invention concerne également le procédé de fabrication d'une telle puce.

PROCEDE DE FABRICATION D'UNE PUCE PHOTONIQUE PAR REPORT D'UNE VIGNETTE SUR UN SUBSTRAT DE RECEPTION

ULTRA-HIGH MULTIPLEX ANALYTICAL SYSTEMS AND METHODS

Apparatus, systems and methods for use in analyzing discrete reactions at ultra high multiplex with reduced optical noise, and increased system flexibility. Apparatus include substrates having integrated optical components that increase multiplex capability by one or more of increasing density of reaction regions, improving transmission of light to or collection of light from discrete reactions regions. Integrated optical components include reflective optical elements which re-direct illumination light and light emitted from the discrete regions to more efficiently collect emitted light. Particularly preferred applications include single molecule reaction analysis, such as polymerase mediated template dependent nucleic acid synthesis and sequence determination.

HIGH DENSITY, THREE-DIMENSIONAL, INTERCOUPLED CIRCUIT STRUCTURE

A three-dimensional circuit structure includes a plurality of elongate cylindrical substrates positioned in parallel and in contact with one another. Electrical components are formed on the surfaces of the substrates, along with electrical conductors coupled to those components. The conductors are selectively positioned on each substrate so as to contact conductors on adjacent substrates to allow for the transfer of electrical signals between substrates. The conductor patterns on the substrates may be helical, circumferential, or longitudinal, in such a fashion that substrates may be added to or removed from the bundle so that the bundle will continue to operate as needed. The cylindrical nature of the substrates leaves gaps or channels between the substrates to which cooling fluid may be supplied for cooling the circuitry.

AN OPTICAL BEAM SPOT SIZE CONVERTOR

OPTICAL COUPLER HAVING AN INTERMEDIATE WAVEGUIDE

L'invention se rapporte à un coupleur optique (10) dans une configuration verticale comprenant un premier guide d'ondes (12) et un deuxième guide d'ondes (14). Le coupleur optique (10) comprend un troisième guide d'ondes (16) distincts des premier et deuxième guides d'ondes (12, 14) et s'étendant parallèlement aux premier et deuxième guides d'ondes (12, 14), le troisième guide d'ondes (16) étant agencé entre le premier guide d'ondes (12) et le deuxième guide d'ondes (14) dans une direction transversale (X) perpendiculaire à la direction longitudinale (Z) et présentant des paramètres influant sur le couplage par ondes évanescentes entre le premier guide d'ondes (12) et le deuxième guide d'ondes (14), ces paramètres étant choisis de sorte que le couplage soit supérieur à 15%.

METHOD FOR MAKING AN OPTICAL DEVICE

MODULE A MULTICOUCHES RENFERMANT DES CANAUX OPTIQUES ET SON PROCEDE DE FABRICATION

Module de céramique comportant des canaux en verre pouvant transmettre des signaux ou des impulsions optiques. Le module 10 est constitué par un corps en céramique 14, cette céramique pouvant être un mélange d'ecutyptite et de verre au borosilicate ou d'anorthithe et de verre au borosilicate ou de silice fondu. A l'intérieur de ce module sont réalisés des canaux en verre 16, le verre pouvant être un verre au plomb et au potassium, un verre au baryum et au potassium ou un silicate de titane amorphe. Ce module est supporté par un substrat 12 et supporte lui-même des blocs semi-conducteurs 20, le substrat et les blocs semi-conducteurs comportant des moyens pour communiquer optiquement avec les canaux de verre 16. Utilisation dans la technologie des circuits électroniques.

optical coupler and optical device module used the same

MULTI-TIER MICRO-RING RESONATOR OPTICAL INTERCONNECT SYSTEM

Systems and methods according to these exemplary embodiments provide for optical interconnection using dual micro-ring resonators in a multilayer structure. Multi-wavelength optical signals can be redirected on a wavelength-by- wavelength basis, or larger, from input ports on a first layer to output ports on a second layer of an optical device.

OPTICAL SWITCH WITH 3D WAVEGUIDES

An optical switch for routing optical signals between optical fibers is shown. Signals are guided internally in an optically transparent substrate by buried waveguides that are directly coupled to the optical fibers. These waveguides form a 3-dimensional optical routing structure internal to the substrate. Signals are coupled between adjacent waveguides by total internal reflection at the surfaces of the substrate. A moveable diffraction grating is coupled to these optical signals at points of total internal reflection via evanescent coupling. This coupling causes a change in direction of the optical signal and routes the signal to the desired waveguide. Known techniques can be used to form the waveguides by writing them with a pulsed laser. Local heating causes a permanent increase in refractive index that forms a single mode waveguide structure. The resulting device has low losses and can be formed by low cost MEMs processes.

MULTI-PIECE FIBER OPTIC COMPONENT AND MANUFACTURING TECHNIQUE

A method of making a fiber optic connector (1500) adapted to receive a fiber bearing unit involves coupling at least one high precision piece, having holes configured to accept an array of optical fibers, to a low precision piece to form a unit, inserting optical fibers into the unit and housing the unit within a fiber optic connector housing, A commercial fiber optic connector of a style constructed to accept a ferrule-like unit therein has a connector housing, at least 36 optical fiber, a low precision piece and at least one high precision slice having at least 36 fiber holes each adapted to accept one of the optical fibers, the low precision piece and the at least one high precision slice being contained substantially within the connector housing and forming the ferrule like unit.

POINT-DEFECT THREE-DIMENSIONAL PHOTONIC CRYSTAL OPTICAL RESONATOR

A point-defect three-dimensional photonic crystal capable of controlling a resonance wavelength, obtained by introducing a defective member into a three-dimensional photonic crystal to form a point defect (12). Accordingly, a defect level is formed in a photonic band gap, and light having a wavelength corresponding to a defect-level energy only can exist in the point defect (12) to allow the crystal to function as an optical resonator at that wavelength. Being a three-dimensional crystal, the resonator incurs less energy loss of light from the point defect (12), and is hence very efficient. Parameters of a defective member such as a size, a shape and a position, if properly set, can control a resonance wavelength. When parameters of a defective member introduce a plurality of different point defects, one three-dimensional photonic crystal can make light of a plurality of wavelength resonate. These factors contribute to the downsizing of devices such as for wavelength multiplexing optical ...

OPTICAL WIRING SUBSTRATE AND OPTICAL AND ELECTRIC COMBINED SUBSTRATE

An optical wiring substrate enabling the easy alignment of the positions of the cores of an optical pin with the positions of the cores of an optical waveguide layer with a simple structure and an optical and electric combined substrate. The optical wiring substrate comprises an optical wiring layer (31) having optical waveguides (35) and the optical pin (32) is inserted into a hole (34) formed in the optical wiring layer and cutting a part of the optical waveguide. The optical pin comprises the cores (2) and a clad, and first recesses (5) are formed in one of its outer surfaces. Projections (33) used as guides for positioning the optical pin together with the recesses are formed on one of the wall surfaces of the hole.

TWO-DIMENSIONAL PHOTONIC CRYSTAL SLAB HAVING LOCAL THREE-DIMENSIONAL STRUCTURE

A two-dimensional photonic crystal for controlling the front/back emission ratio of light emitted from an optical resonator. A refractive index member (13) of a material having a refractive index different from that of the air is provided on a two-dimensional photonic crystal having air-holes (12) periodically made in the body (11) of the crystal. The body (11) where the refractive index member (13) is provided constitutes an optical resonator together with the refractive index member (13). The light (191) emitted from the high refractive index side, namely from the side where the refractive index member (13) is provided is made stronger than the light (192) emitted from the other side. The front/back emission ratio between the lights (191, 192) can be controlled by varying the refractive index, shape, and size of the refractive index member.

Multi-level waveguide

A multi-level waveguide to transmit light through a series of substrates. The multi-level waveguide is made up of stacked substrates, each containing a two dimensional array of transparent material filled vias. Transparent materials such as optical fiber, cladding, and gas may be used to provide a pathway for light. Optionally, a conductive layer may be deposited on a substrate in the multi-level waveguide. The conductive layer can then interact with the multi-level waveguide through light detecting devices such as photodetectors.

III-V Photonic Integration on Silicon

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits. 120-. (canceled)21. An article comprising: (a) a substrate having a first surface, the substrate comprising single-crystal silicon;', '(b) a first dielectric layer that is disposed on and in direct contact with the first surface, the first dielectric layer comprising a first dielectric material and a second surface that is distal to the first surface; and', '(c) a first semiconductor layer that is disposed on and in direct contact with the second surface, the first semiconductor layer having a third surface that is distal to the second surface, and the first semiconductor layer including a first waveguide;, '(1) a semiconductor-on-insulator substrate, the semiconductor-on-insulator substrate comprising(2) a compound semiconductor structure comprising a first compound semiconductor layer and at least one quantum well; and(3) a bonded interface located at the third surface, the semiconductor structure and the compound semiconductor structure being joined at the bonded interface such that the bonded interface is characterized by a lattice mismatch;wherein the first compound semiconductor layer and the first waveguide are evanescently coupled.22. The article of further comprising (4) an electrical device claim 21 , the electrical device being at least partially formed in the first semiconductor layer.23. The article of further comprising (4) an electrical device claim 21 , the electrical device being at least partially formed in the compound ...

PLANAR LIGHTWAVE CIRCUIT

In an integrated optical receiver or transmitter, both the displacement of an optical axis caused by thermal changes and the property degradation of an optical functional circuit are inhibited. A planar lightwave circuit having a substrate and a waveguide-type optical functional circuit formed thereon composed of a material different from that of the substrate, and includes a waveguide region formed only of an optical wavelength that is in contact with a side forming an emission-end face of the optical waveguide for propagating the light emitted from the optical functional circuit or an incident-end face of an optical waveguide for propagating the light incident on the optical functional circuit. The planar lightwave circuit is fixed to a fixing mount only at the bottom of the substrate where the waveguide region is formed.

Through-silicon vias for heterogeneous integration of semiconductor device structures

The present disclosure relates to semiconductor structures and, more particularly, to through-silicon vias (TSV) for heterogeneous integration of semiconductor device structures and methods of manufacture. The structure includes: a plurality of cavity structures provided in a single substrate; at least one optical device provided on two sides of the single substrate and between the plurality of cavity structures; and a through wafer optical via extending through the substrate, between the plurality of cavity structures and which exposes a backside of the at least one optical device.

Optoelectronic circuit having one or more double-sided substrates

An optoelectronic circuit having a substantially planar double-sided substrate, each side of which has a respective plurality of electrically conducting tracks and a respective plurality of planar optical waveguides. The substrate also has at least one via crossing the substrate in a manner that can be used to establish an optical path across the substrate, e.g., between optical waveguides located on different sides thereof. In an example embodiment, the electrically conducting tracks and planar optical waveguides are configured to operatively connect various optoelectronic devices and auxiliary electrical circuits attached to the two sides of the substrate using hybrid-integration technologies. In some embodiments, two or more of such double-sided substrates can be stacked and optically and electrically interconnected to create an integrated three-dimensional assembly.

Optical Inspection Circuit

An optical inspection circuit includes an optical circuit to be inspected formed on a substrate, an input optical waveguide optically connected to the optical circuit, and an output optical waveguide optically connected to the optical circuit. The input optical waveguide is connected with a grating coupler for input. The grating coupler is connected with the input optical waveguide via a spot size conversion unit. The output optical waveguide is optically connected with a photodiode.

METHODS OF FORMING THREE-DIMENSIONALLY INTEGRATED SEMICONDUCTOR SYSTEMS INCLUDING PHOTOACTIVE DEVICES AND SEMICONDUCTOR-ON-INSULATOR SUBSTRATES

Three-dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling a waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.

OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME

The present invention relates to an optical device comprising a first sub-chip and a second sub-chip flipped over on the first sub-chip. The first sub-chip includes a first substrate, a first lower cladding pattern on a first surface of the first substrate, and a first core layer on the first lower cladding pattern. The second sub-chip includes a second substrate, a second lower cladding pattern on a second surface of the second substrate, and a second core layer on the second lower cladding pattern. The first surface of the first substrate faces the second surface of the second substrate. The first lower cladding pattern has a first top surface parallel to the first surface and a first sidewall inclined to the first surface. The first core layer includes a first core part on the first top surface and a first side part on the first sidewall.

Exciting a selected mode in an optical waveguide

A method of exciting a selected light propagation mode in a device is disclosed. At least two light beams are propagated proximate a waveguide of the device substantially parallel to a selected surface of the waveguide. Light is transferred from the at least two beams of light into the waveguide through the selected surface to excite the selected light propagation mode in the waveguide.

Integrated optoelectronic device and system with waveguide and manufacturing process thereof

An integrated electronic device, delimited by a first surface and by a second surface and including: a body made of semiconductor material, formed inside which is at least one optoelectronic component chosen between a detector and an emitter; and an optical path which is at least in part of a guided type and extends between the first surface and the second surface, the optical path traversing the body. The optoelectronic component is optically coupled, through the optical path, to a first portion of free space and a second portion of free space, which are arranged, respectively, above and underneath the first and second surfaces.

SUB-WAVELENGTH GRATING-BASED OPTICAL ELEMENTS

Planar, polarization insensitive, optical elements to control refraction of transmitted light in free space are disclosed. In one aspect, an optical element includes a substrate having a planar surface, and a polarization insensitive, high contrast, sub-wavelength grating composed of posts that extend from the planar surface. The grating has at least one region. Within each region, cross-sectional dimensions of the posts and/or lattice arrangement of the posts are nonperiodically varied to control refraction of light transmitted through the optical element. 1. An optical element comprising:a substrate having a planar surface; anda polarization insensitive, high contrast, sub-wavelength grating composed of posts that extend from the planar surface, the grating having at least one region wherein cross-sectional dimensions of the posts and/or lattice arrangement of the posts are nonperiodically varied to control refraction of light transmitted through the optical element.2. The element of claim 1 , wherein the lattice arrangement of the posts further comprises the posts having at least one two-dimensional regular geometrical lattice arrangement.3. The element of claim 1 , wherein within each region the cross-sectional dimensions of the posts are nonperiodically varied further comprises within each region the cross-sectional dimensions of the posts nonperiodically and systematically varied in a first direction parallel to the planar surface and the cross-sectional dimensions of the posts are constant in a second direction parallel to the planar surface claim 1 , the second direction perpendicular to the first direction.4. The element of claim 1 , wherein within each region the cross-sectional dimensions of the posts are nonperiodically varied further comprises within each region the cross-sectional dimensions of the posts nonperiodically and systematically varied away from the center of the grating.5. The element of claim 1 , wherein within each region cross-sectional ...

OPTICAL CONNECTOR

An optical connector includes a substrate, a light emitter, a case, an optical fiber, and a photo detector. The light emitter, the case, and the photo detector are positioned on the substrate, and the case covers the light emitter and the photo detector. The case defines a first slot and a second slot. The first slot is configured for splitting a light beam of the light emitter into a part transmitting to the optical fiber for data transmission and another part to a side surface of the second slot and directed to the photo detector for intensive and stability measurement of the light beam. 1. An optical connector , comprising:a substrate;a light emitter positioned on the substrate;a case positioned on the substrate and covering the light emitter, the case comprising a first surface, a second surface, and a third surface, the second surface facing the light emitter and opposing the first surface, the third surface perpendicularly connecting the first surface to the second surface, the case comprising a first lens formed on the second surface and aligned with the light emitter, the case defining a first slot, a second slot, and a groove in the first surface, all of the first slot, the second slot, and the groove extending along a direction that is parallel with the third surface, the second slot and the groove being positioned at two sides of the first slot, the first slot forming a first total internal reflection (TIR) surface and a second TIR surface, the second slot forming a third TIR surface, the groove running through the third surface and forming a side surface parallel with the third surface, the case comprising a second lens formed on the side surface and optically aligned with the first lens through the first TIR surface;an optical fiber positioned in the groove and optically aligned with the second lens; anda photo detector positioned on the substrate, the photo detector being optically aligned with the first lens through the second TIR surface and the ...

SEMICONDUCTOR INTEGRATED CIRCUIT

A semiconductor integrated circuit according to an example of the present invention includes a chip substrate, first and second switches arranged on the chip substrate in which ON/OFF of an electrical signal path is directly controlled by an optical signal, a first light shielding layer arranged above the chip substrate, an optical waveguide layer arranged on the first light shielding layer, a second light shielding layer arranged on the optical waveguide layer, a reflecting plate arranged in the optical waveguide layer to change an advancing direction of the optical signal, and means for leading the optical signal to the first and second switches from an inside of the optical waveguide layer. The first and second light shielding layers reflect the optical signal, and the optical waveguide layer transmits the optical signal radially. 1. A semiconductor integrated circuit comprising:a chip substrate;a plurality of first optical waveguide layers and a plurality of first light shielding layers alternately stacked above the chip substrate;a plurality of first reflecting plates arranged inside the plurality of first optical waveguide layers to change an advancing direction of an optical signal; anda plurality of first vertical holes connecting the plurality of first optical waveguide layers,wherein the plurality of first light shielding layers reflect the first optical signal, the plurality of first optical waveguide layers transmit the first optical signal radially, and the first optical signal moves among the plurality of first optical waveguide layers via the plurality of first vertical holes.2. The semiconductor integrated circuit according to claim 1 ,wherein a light incident hole which captures the first optical signal is provided on a first light shielding layer farthest from the chip substrate among the plurality of first light shielding layers, and a light emission hole which takes out the first optical signal is provided on a first light shielding layer closest ...

Holographic waveguide lidar

A holographic waveguide LIDAR having a transmitter waveguide coupled to a beam deflector and a receiver waveguide coupled to a detector module. The transmitter waveguide contains an array of grating elements for diffracting a scanned laser beam into a predefined angular ranges. The receiver waveguide contains an array of grating elements for diffracting light reflected from external points within a predefined angular range towards the detector module.

SEMICONDUCTOR DEVICE PACKAGES

A semiconductor device package includes a substrate and an optical device. The optical device includes a first portion extending into the substrate and not extending beyond a first surface of the substrate. The optical device further includes a second portion extending along the first surface of the substrate. 1. A semiconductor device package , comprising:a substrate having a first surface; andan optical device comprising a first portion extending into the substrate and under the first surface of the substrate, and further comprising a second portion extending along the first surface of the substrate.2. The semiconductor device package of claim 1 , wherein the first portion of the optical device has a first width and the second portion of the optical device has a second width claim 1 , wherein the second width is greater than the first width.3. The semiconductor device package of claim 1 , wherein the second portion of the optical device comprises a protrusion and the substrate defines a groove extending from the first surface of the substrate claim 1 , and wherein the protrusion of the second portion of the optical device engages with the groove of the substrate.4. The semiconductor device package of claim 1 , wherein the substrate comprises a semiconductor layer and a semiconductor oxide layer claim 1 , the semiconductor device package further comprising a waveguide disposed in the semiconductor oxide layer.5. The semiconductor device package of claim 4 , wherein the optical device further comprises a light emitting or a light receiving portion aligned with the waveguide claim 4 , and a vertical offset between the light emitting or the light receiving portion and the waveguide is less than about one third of a width of the waveguide.6. The semiconductor device package of claim 1 , wherein the first portion of the optical device is disposed in the substrate.7. The semiconductor device package of claim 1 , wherein the second portion of the optical device is ...

LASER ASSEMBLY PACKAGING FOR SILICON PHOTONIC INTERCONNECTS

Processes and apparatuses described herein reduce the manufacturing time, the cost of parts, and the cost of assembly per laser for photonic interconnects incorporated into computing systems. An output side of a laser assembly is placed against an input side of a silicon interposer (SiP) such that each pad in a plurality of pads positioned on the output side of the laser assembly is in contact with a respective solder bump that is also in contact with a corresponding pad positioned on the input side of the SiP. The laser assembly is configured to emit laser light from the output side into an input grating of the SiP. The solder bumps are heated to a liquid phase. Capillary forces of the solder bumps realign the laser assembly and the SiP while the solder bumps are in the liquid phase. The solder bumps are then allowed to cool. 1. A method comprising:placing an output side of a laser assembly against an input side of a silicon interposer (SiP) such that each pad in a plurality of pads positioned on the output side of the laser assembly is in contact with a respective solder bump that is also in contact with a corresponding pad positioned on the input side of the SiP, wherein the laser assembly comprises a laser diode and is configured to emit laser light from the output side, and wherein the SiP comprises an input grating configured to redirect the laser light through a silicon layer of the SiP;heating the solder bumps to at least a first temperature at which the solder bumps change from a solid phase to a liquid phase;allowing capillary forces of the solder bumps to realign the laser assembly and the SiP while the solder bumps are in the liquid phase; andcooling the solder bumps to a second temperature below the first temperature such that the solder bumps change from the liquid phase to the solid phase, wherein the solder bumps couple the laser assembly to the SiP when the cooling is completed, wherein the output side of the laser assembly comprises an output ...

Optical Apparatus and Methods of Manufacture Thereof

Optical apparatus and methods of manufacture thereof An optical apparatus () for evanescently coupling an optical signal across an (interface () is described. The optical apparatus () comprises a first substrate () and a second substrate (). The optical signal is evanescently coupled between a first waveguide () formed by laser inscription of the first substrate () and a second waveguide () of the second substrate (). The first waveguide () comprises a curved section () configured to provide evanescent coupling of the optical signal between the first and second waveguides () via the interface ().

Photonic Package and Method Forming Same

A method includes bonding an electronic die to a photonic die. The photonic die includes an opening. The method further includes attaching an adapter onto the photonic die, with a portion of the adapter being at a same level as a portion of the electronic die, forming a through-hole penetrating through the adapter, with the through-hole being aligned to the opening, and attaching an optical device to the adapter. The optical device is configured to emit a light into the photonic die or receive a light from the photonic die.

Multilayer Optical Devices and Systems

One example system comprises a plurality of substrates disposed in an overlapping arrangement. The plurality of substrates includes at least a first substrate and a second substrate. The system also comprises a first waveguide disposed on the first substrate to define a first optical path on the first substrate. The first waveguide is configured to guide light along the first optical path and to transmit, at an output section of the first waveguide, the light out of the first waveguide toward the second substrate. The system also comprises a second waveguide disposed on the second substrate to define a second optical path on the second substrate. An input section of the second waveguide is aligned with the output section of the first waveguide to receive the light transmitted by the first waveguide. The second waveguide is configured to guide the light along the second optical path. 1. A system comprising:a light emitter configured to emit a light signal;a first waveguide comprising a first side, a second side, an output mirror disposed on the second side, and a third side extending between the first side and the second side, wherein the first waveguide is configured to receive the light signal at the first side and guide the light signal from the first side of the first waveguide to the second side of the first waveguide, and wherein the output mirror is configured to configured to reflect at least a portion of the light signal out of the first waveguide through the third side of the first waveguide; anda second waveguide spaced apart from the first waveguide, the second waveguide comprising a first side, an input mirror disposed on the first side, and a second side, wherein the input mirror is configured to reflect into the second waveguide at least a portion of the light signal reflected out of the third side of the first waveguide, and wherein the second waveguide is configured to guide the light signal reflected into the second waveguide toward the second side ...

CONTACT IMAGE SENSOR USING SWITCHABLE BRAGG GRATINGS

A contact image sensor having: an illumination; a first SBG array device; a transmission grating; a second SBG array device; a waveguiding layer having a multiplicity of waveguide cores separated by cladding material; an upper clad layer; and a platen. The sensor also including an optical device for coupling light from an illumination source into the first SBG array; and an optical coupler for coupling light out of the cores into output optical paths coupled to a detector having at least one photosensitive element. 1. A contact image sensor comprising the following parallel optical layers configured as a stack:an illumination means for providing a collimated beam of first polarisation light;a first SBG array device further comprising first and second transparent substrates sandwiching an array of selectively switchable SBG column, and transparent electrodes applied to opposing faces of said substrates and said SBG substrates together providing a first TIR light guide for transmitting light in a first TIR beam direction;a transmission grating;a second SBG array device further comprising third and fourth transparent substrates sandwiching a multiplicity of high index HPDLC regions separated by low index HPDLC regions and patterned transparent electrodes applied to opposing faces of said substrates; and a platen; and further comprising:means for coupling light from said illumination means into said first TIR light guide;means for coupling light out of said second SBG array device into an output optical path;and a detector comprising at least one photosensitive element;wherein said high index regions providing waveguiding cores are disposed parallel to said first beam direction,wherein said low index HPDLC regions providing waveguide cladding, said substrate layers having a generally lower refractive index than said cores,wherein said patterned electrodes applied to said third substrate comprise column shaped elements defining a multiplicity of selectively switchable ...

SEMICONDUCTOR PACKAGE WITH AN OPTICAL SIGNAL PATH, MEMORY CARD INCLUDING THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME

A semiconductor package includes a substrate and an optical communication part. A first chip stack part and a second chip stack part are disposed over the substrate and are separate from each other, and the optical communication part is disposed in a cavity formed in the substrate to provide an optical signal path between the first and second chip stack parts. 1. A semiconductor package comprising:a substrate over which a first chip stack part and a second chip stack part are disposed to be separate from each other; andan optical communication part disposed in a cavity that is formed in the substrate to provide an optical signal path between the first and second chip stack parts.2. The semiconductor package of claim 1 , wherein the optical communication part includes:a first optical transceiver electrically coupled to the first chip stack part; anda second optical transceiver electrically coupled to the second chip stack part.3. The semiconductor package of claim 2 ,wherein the optical communication part further includes a plurality of total reflectors which are disposed in the cavity to provide the optical signal path, andwherein the plurality of total reflectors are aligned with the first and second optical transceivers.4. The semiconductor package of claim 2 , wherein the optical communication part further includes optical fibers which are disposed in the cavity and coupled to the first and second optical transceivers to provide the optical signal path between the first and second optical transceivers.5. The semiconductor package of claim 2 , further comprising:first through substrate vias penetrating the substrate to electrically couple the first optical transceiver to the first chip stack part; andsecond through substrate vias penetrating the substrate to electrically couple the second optical transceiver to the second chip stack part.6. The semiconductor package of claim 1 , further comprising a radiation part disposed at a separation portion of the substrate ...

PHOTON ENHANCED BIOLOGICAL SCAFFOLDING

Provided herein are biocompatible scaffolds engineered to convey growth stimulatory light to cells and augment their growth on the scaffolds both in vitro and in vivo. Also provide are methods of modifying biocompatible transparent waveguides to control delivery of light from the waveguide material. 1. A device for tissue repair comprising:a tissue scaffold comprising of a plurality of interconnected photon waveguides, the waveguides adapted to convey cell stimulatory photons and to release the cell stimulatory photons from the waveguides by optical scattering, andan optical connector attached to the tissue scaffold, wherein the optical connector is adapted to connect to a source of cell stimulatory photons.2. The device of claim 1 , wherein the waveguides are biodegradable.3. The device of claim 2 , wherein the biodegradable waveguides are composed of a transparent material selected from the group consisting of: transparent polylactide (PLA) claim 2 , silk fibroin claim 2 , and polyethylene glycol (PEG).4. The device of claim 1 , wherein the tissue scaffold is formed as a plurality of interconnecting ring resonators.5. The device of claim 4 , wherein the tissue scaffold is formed as a three dimensional mesh of interconnecting ring resonators.6. The device of claim 3 , wherein the waveguides are treated to increase optical scattering.7. The device of claim 1 , wherein the waveguides are composed of PLA or silk fibroin and are treated by surface etching to increase optical scattering.8. The device of claim 1 , wherein the waveguides are composed of PLA or silk fibroin and are heat treated to generate amorphous boundary layers that result in increased optical scattering.9. The device of claim 1 , wherein the tissue scaffold is an expandable stent.10. The device of claim 1 , wherein the tissue scaffold is a bone repair scaffold.11. The device of claim 1 , wherein the tissue scaffold is a muscle repair scaffold.12. The device of claim 1 , wherein the tissue scaffold is ...

On-chip optical polarization controller

An example optical polarization controller can include a substantially planar substrate and a waveguide unit cell formed on the substantially planar substrate. The waveguide unit cell can include a first out-of-plane waveguide portion and a second out-of-plane waveguide portion coupled to the first out-of-plane waveguide portion. Each of the first and second out-of-plane waveguide portions can respectively include a core material layer arranged between a first optical cladding layer having a first stress-response property and a second optical cladding layer having a second stress-response property. The first and second stress-response properties can be different such that each of the first and second out-of-plane waveguide portions is deflected by a deflection angle.

OPTICAL COMPONENT ALIGNMENT USING INVERTED CARRIER MEMBER

Embodiments include an optical apparatus and associated method of assembling. The optical apparatus comprises a substrate defining a first surface and a channel formed relative thereto, the substrate including one or more waveguides extending to a sidewall partly defining the channel, a plurality of first electrical contacts formed on the first surface. The optical apparatus further comprises a carrier member defining a second surface and at least a third surface, the second surface coupled with the first surface of the substrate. The optical apparatus further at least one optical component coupled with the second surface and at least partly disposed within the channel, wherein the at least one optical component is optically coupled with the one or more waveguides and electrically connected with the first electrical contacts via a plurality of second electrical contacts at the third surface of the carrier member. 1. An optical apparatus comprising:a substrate defining a first surface and a channel formed relative thereto, the substrate including one or more waveguides extending to a sidewall partly defining the channel, a plurality of first electrical contacts formed on the first surface;a carrier member defining a second surface and at least a third surface, the second surface coupled with the first surface of the substrate; anda plurality of optical components coupled with the second surface and at least partly disposed within the channel,wherein the plurality of optical components is optically coupled with the one or more waveguides and electrically connected with the first electrical contacts via a plurality of second electrical contacts at the third surface of the carrier member, andwherein the plurality of optical components comprises a lens component and at least one other optical component, wherein the at least one other component is optically coupled with the one or more waveguides through the lens component.2. The optical apparatus of claim 1 , wherein the ...

Plasmonic funnel for focused optical delivery to a metallic medium

An apparatus includes a transducer including a plasmonic funnel having first and second ends with the first end having a smaller cross-sectional area than the second end, and a first section positioned adjacent to the first end of the plasmonic funnel, and a first waveguide having a core, positioned to cause light in the core to excite surface plasmons on the transducer.

THREE-DIMENSIONAL ELECTRONIC PHOTONIC INTEGRATED CIRCUIT FABRICATION PROCESS

A device and the process for creating a three-dimensional electronic photonic circuit is disclosed. The process includes fabricating a standard high performance integrated circuit on a high resistivity silicon or a silicon-on-insulator substrate up to and including the passivation layer on top of transistors. Separately, a silicon-on-insulator wafer capped by an oxide layer is fabricated, then the two wafers are joined. The resultant device has photonic process elements (e.g. waveguides and photodetectors) fabricated in the top silicon layer. Continued processing interconnects the transistors and photonic elements with contacts and metallization levels to produces an electronic-photonic integrated circuit. 1. A method for fabricating a three-dimensional electronic photonic integrated circuit comprising:fabricating an integrated circuit wafer;fabricating separately a silicon-on-insulator photonic wafer;either joining said wafers at an oxide-to-oxide interface, or fabricating photonic process elements in said photonic wafer;fabricating photonic process elements in said photonic wafer if not previously accomplished; andinterconnecting said transistors and said photonic process elements whereby functionality of an electronic-photonic integrated circuit is obtained.2. The method of claim 1 , wherein said integrated circuit wafer comprises a high resistivity silicon substrate.3. The method of claim 1 , wherein said integrated circuit wafer comprises a silicon-on-silicon insulator substrate.4. The system of claim 1 , wherein said integrated circuit wafer comprises a passivation layer.5. The method of claim 1 , wherein said integrated circuit wafer comprises a passivation layer on top of at least one transistor.6. The method of claim 1 , wherein said silicon-on-insulator photonics wafer comprises an oxide layer cap.7. The method of claim 1 , wherein said joining comprises standard thermal bonding techniques.8. The method of claim 1 , wherein said silicon-on-insulator ...

Optical Interconnector, Optoelectronic Chip System, and Optical Signal Sharing Method

An optical interconnector ( 915 ) includes: a first vertical coupled cavity ( 100 ), a first optical waveguide ( 102 ), and a second optical waveguide ( 103 ). The first vertical coupled cavity ( 100 ) includes N identical micro-resonant cavities that are equidistantly stacked, where a center of each micro-resonant cavity is located on a first straight line that is perpendicular to a plane on which the micro-resonant cavity is located, the first optical waveguide ( 102 ) and a first micro-resonant cavity ( 11 ) are in a same plane, the second optical waveguide ( 103 ) and a second micro-resonant cavity ( 13 ) are in a same plane, the first optical waveguide ( 102 ) is an input optical waveguide, the second optical waveguide ( 103 ) is a first output optical waveguide, and an optical signal having a first resonant wavelength in the first optical waveguide ( 102 ) enters the second optical waveguide ( 103 ) through the first vertical coupled cavity ( 100 ).

Transmission type high-absorption optical modulator and method of manufacturing the same

Provided are a transmission type high-absorption optical modulator and a method of manufacturing the transmission type high-absorption optical modulator. The optical modulator includes: a substrate; a lower distributed Bragg reflector (DBR) layer on the substrate; a lower clad layer on the lower DBR layer; an active layer that is formed on the lower clad layer and includes a quantum well layer and a quantum barrier layer; an upper clad layer on the active layer; an upper DBR layer on the upper clad layer; and a doping layer that supplies carriers to the quantum well layer. In the optical modulator, the doping layer may be included in the quantum barrier layer or in at least one of the upper and lower clad layers.

Waveguide Structure for Optical Coupling

A waveguide structure for optical coupling, including a first waveguide embedded in a first cladding, and at least two second waveguides distanced vertically from the first waveguide and embedded in a second cladding provided on the first cladding. The first waveguide and the at least two second waveguides each have an at least partly tapered end section in a coupling region of the waveguide structure, the end section of the first waveguide being tapered oppositely to end sections of the at least two second waveguides. The first waveguide is arranged laterally between the at least two second waveguides in the coupling region. 1. A waveguide structure for optical coupling , comprising:a first waveguide embedded in a first cladding, andat least two second waveguides distanced vertically from the first waveguide and embedded in a second cladding provided on the first cladding,wherein the first waveguide and the at least two second waveguides each comprise an at least partly tapered end section in a coupling region of the waveguide structure, the end section of the first waveguide being tapered oppositely to end sections of the at least two second waveguides, andwherein the first waveguide is arranged laterally between the at least two second waveguides in the coupling region.2. The waveguide structure according to claim 1 , wherein the end sections of the at least two second waveguides are non-tapered in a transfer section of the coupling region claim 1 , andwherein the end section of the first waveguide is tapered in the transfer section.3. The waveguide structure according to claim 2 , wherein a lateral distance between the first waveguide and each of the at least two second waveguides is at least 0.7 μm.4. The waveguide structure according to claim 3 , wherein the end sections of the second waveguides in a conversion region are tapered oppositely to the end sections of the second waveguides in the coupling region.5. The waveguide structure according to claim 1 , ...

OPTICAL COUPLING DEVICE WITH A WIDE BANDWIDTH AND REDUCED POWER LOSSES

A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide. 1. A photonic device , comprising:a first band made of amorphous semiconductor material and having a length extending from a first end to a second end;an intermediate band made of insulating material; anda second band made of amorphous semiconductor material and having a length extending from a third end to a fourth end;wherein the intermediate band is stacked between and in contact with the first and second bands;said first band having a width, wherein the width of the first band increases in a first part of the first band which extends from the first end to a first intermediate point and wherein the width of the first band decreases in a second part of the first band which extends from the first intermediate point to the second end; andsaid second band having a width, wherein the width of the second band increases in a first part of the second band which extends from the third end to a second intermediate point and wherein the width of the second band further increases in a second part of the second band which extends from the second intermediate point to a third intermediate point located adjacent the second end of the upper band.2. The photonic device of ...

Waveguide of an soi structure

A method includes forming a layer made of a first insulating material on a first layer made of a second insulating material that covers a support, defining a waveguide made of the first material in the layer of the first material, covering the waveguide made of the first material with a second layer of the second material, planarizing an upper surface of the second layer of the second material, and forming a single-crystal silicon layer over the second layer.

THREE-DIMENSIONAL MICRO-ELECTRO-MECHANICAL, MICROFLUIDIC, AND MICRO-OPTICAL SYSTEMS

Various three-dimensional devices that can be formed within the bulk of a semiconductor by photo-controlled selective etching are described herein. With more particularity, semiconductor devices that incorporate three-dimensional electrical vias, waveguides, or fluidic channels that are disposed within a semiconductor are described herein. In an exemplary embodiment, a three-dimensional interposer chip includes an electrical via, a waveguide, and a fluidic channel, wherein the via, the waveguide, and the fluidic channel are disposed within the body of a semiconductor element rather than being deposited on a surface. The three-dimensional interposer is usable to make electrical, optical, or fluidic connections between two or more devices. 1. A semiconductor device comprising:a bulk semiconductor element having a first surface and a second surface; anda waveguide disposed within the semiconductor bulk element, wherein the waveguide comprises a first end and a second end, and wherein the first end terminates on the first surface of the bulk semiconductor element, and wherein further the second end terminates on the first surface or the second surface of the bulk semiconductor element such that the second end is laterally offset from the first end.2. The semiconductor device of claim 1 , wherein the semiconductor device is an interposer claim 1 , and wherein the semiconductor device further comprises:a channel disposed within the bulk semiconductor element, the channel having an inlet and an outlet, the channel configured to accommodate a fluid, wherein the inlet of the channel terminates on the first surface of the bulk semiconductor element, and wherein further the outlet of the channel terminates on the first surface or the second surface of the bulk semiconductor element such that the outlet is laterally offset from the inlet; anda via disposed within the bulk semiconductor element, the via comprising an electrically conductive material, the via having a first ...

Photonic semiconductor device and method of manufacture

A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.

WAVEGUIDE TRANSITION STRUCTURE AND FABRICATION METHOD

Some embodiments of the present disclosure describe a tapered waveguide and a method of making the tapered waveguide, wherein the tapered waveguide comprises a first and a second waveguide, wherein the first and second waveguides overlap in a waveguide overlap area. The first and second waveguides have a different size in at least one dimension perpendicular to an intended direction of propagation of electromagnetic radiation through the tapered waveguide. Across the waveguide overlap area, one of the waveguides gradually transitions or tapers into the other. 125-. (canceled)26. A waveguide transition structure , comprising:a first waveguide with a first thickness extending along the waveguide transition structure from a first end of the waveguide transition structure, wherein the first waveguide has a first width;a second waveguide with a second thickness different from the first thickness extending from a second end of the waveguide transition structure opposite the first end;wherein the first waveguide is in a first plane and the second waveguide is in a second plane parallel to the first plane;wherein the first waveguide and the second waveguide are adjacent and overlap in a transition area; andwherein the first waveguide's first width tapers in the transition area, or the first waveguide's first thickness transitions to the second thickness in the transition area.27. The structure according to claim 26 , wherein the first and second waveguides are formed in one continuous epitaxial silicon film.28. The structure according to claim 27 , wherein the one continuous epitaxial silicon film is on a silicon dioxide substrate.29. The structure according to claim 27 , wherein the epitaxial silicon film comprises a crystalline lattice claim 27 , wherein the crystalline lattice comprises at least one crystalline lattice axis perpendicular to an axis of propagation of electromagnetic radiation through the first and second waveguides.30. The structure according to claim 26 ...

INTEGRATED PHOTONICS INCLUDING GERMANIUM

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride. 1. A photonic structure comprising:dielectric material formed over silicon;a trench formed in the dielectric material extending to the silicon;a germanium formation formed in the trench;a top doping region formed in an area of the germanium formation so that the top doping region is spaced from the trench by a spacing distance equal to or greater than a threshold distance;a top contact formed on the top doping region, wherein the top contact is formed of a semiconductor compatible metallization material that is reflective to wavelengths in the range of from about 900 nm to about 1600 nm.2. The photonic structure of claim 1 , wherein an entire perimeter of the top doping region is spaced from the trench by a spacing distance equal to or greater than a threshold distance.3. (canceled)4. The photonic structure of claim 1 , wherein the threshold distance is in the range of 200 nm to 1000 nm.5. (canceled)6. The photonic structure of claim 1 , wherein the threshold distance is 750 nm.7. (canceled)8. The photonic structure of claim 1 , wherein the top contact formed on the doping region is formed in an area of the doping region so that an entire perimeter of the contact is spaced from a perimeter of the doping region by a spacing distance that is equal to or greater than a threshold distance.9. A photonic structure comprising:silicon having a doping region;a germanium formation adapted to receive light transmitted by the silicon;an oppositely doped doping region formed on the germanium formation;a silicide formation formed on the doping region of the silicon;a conductive material formation formed on the silicide formation; anda conductive material formation formed on the germanium formation.10. The photonic ...

STACKED WAVEGUIDE ARRANGEMENTS PROVIDING FIELD CONFINEMENT

Structures including a waveguide arrangement and methods of fabricating a structure that includes a waveguide arrangement. A second waveguide spaced in a lateral direction from a first waveguide, a third waveguide spaced in a vertical direction from the first waveguide, and a fourth waveguide spaced in the vertical direction from the second waveguide. The third waveguide is arranged in the lateral direction to provide a first overlapping relationship with the first waveguide. The fourth waveguide is arranged in the lateral direction to provide a second overlapping relationship with the second waveguide. 1. A structure for a photonic chip , the structure comprising:a first waveguide;a second waveguide spaced in a lateral direction from the first waveguide;a third waveguide spaced in a vertical direction from the first waveguide, the third waveguide arranged in the lateral direction to provide a first overlapping relationship with the first waveguide;a fourth waveguide spaced in the vertical direction from the second waveguide, the fourth waveguide arranged in the lateral direction to provide a second overlapping relationship with the second waveguide; anda multilayer stack arranged between the first waveguide and the third waveguide, the multilayer stack including a first dielectric layer comprised of a first dielectric material and a second dielectric layer comprised of a second dielectric material having a different composition than the first dielectric material,wherein the first waveguide, the second waveguide, the third waveguide, the fourth waveguide, and the multilayer stack are located on the photonic chip.2. The structure of wherein the first waveguide and the second waveguide are comprised of a dielectric material claim 1 , and the third waveguide and the fourth waveguide are comprised of a single-crystal semiconductor material.3. The structure of wherein the first waveguide and the second waveguide are connected by a partially-etched layer comprised of the ...

INTEGRATED PHOTONICS INCLUDING GERMANIUM

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride. 1. A method of fabricating a photodetector structure comprising:forming dielectric material over a silicon waveguide;etching a trench in the dielectric material extending to the silicon waveguide;epitaxially growing germanium within the trench;annealing germanium formed by the epitaxially growing;repeating the epitaxially growing and the annealing;depositing metal within a second trench, the second trench having a bottom defined by the silicon waveguide and a sidewall defined by the dielectric material;performing silicide formation annealing so that the metal reacts with the silicon to form a silicide formation at a bottom of the trench; andperforming transformation stage annealing so that the silicide formation is transformed into a low resistivity phase.2. The method of claim 1 , wherein the depositing metal results in unreacted metal being formed on a sidewall of the second trench claim 1 , and wherein the method includes forming a capping layer over the metal with the metal in an unreacted state prior to the performing silicide formation annealing.3. The method of claim 1 , wherein the depositing metal results in unreacted metal being formed on a sidewall of the second trench claim 1 , wherein the method includes forming a capping layer over the metal with the metal in an unreacted state prior to the performing silicide formation annealing claim 1 , and wherein the method includes removing the capping layer and the unreacted metal prior to the performing transformation stage annealing.4. The method of claim 1 , wherein the transformation stage annealing is performed at a higher annealing temperature than the silicide formation annealing.5. The method of claim 1 , wherein the metal is selected from ...

Integrated optoelectronic device and system with waveguide and manufacturing process thereof

An integrated electronic device, delimited by a first surface and by a second surface and including: a body made of semiconductor material, formed inside which is at least one optoelectronic component chosen between a detector and an emitter; and an optical path which is at least in part of a guided type and extends between the first surface and the second surface, the optical path traversing the body. The optoelectronic component is optically coupled, through the optical path, to a first portion of free space and a second portion of free space, which are arranged, respectively, above and underneath the first and second surfaces.

Concentrating Thin Film Absorber Device and Method of Manufacture

An absorber device comprises a substrate; one or more thin film radiation absorbers arranged on the substrate; an integrated optical system, comprising at least one first optical element; a cover medium arranged above the substrate and the one or more radiation absorbers. The at least one first optical element and at least one corresponding one of the one or more radiation absorbers are aligned with respect to their optical axis, such that an incoming radiation is directed onto the one or more radiation absorbers by the optical system. A method of manufacturing an absorber device is also provided. 1. An absorber device comprising:a substrate;one or more thin film radiation absorbers arranged on the substrate;an integrated optical system, comprising a first optical element;a cover medium arranged above the substrate and the one or more radiation absorbers;wherein the first optical element and a corresponding one of the one or more radiation absorbers are aligned with respect to their optical axes, such that an incoming radiation is directed by the integrated optical system onto the corresponding one of the one or more radiation absorbers.2. The absorber device according to claim 1 , wherein the integrated optical system comprises a second optical element claim 1 , the second optical element being arranged between the first optical element and the one or more radiation absorbers and wherein the first optical element claim 1 , the second optical element and the corresponding one of the one or more radiation absorbers are aligned with respect to their optical axes.3. The absorber device according to claim 1 , wherein the first optical element comprises at least one lens array.4. The absorber device according to claim 1 , wherein the first optical element is integrated at a top surface of the cover medium.5. The absorber device according to claim 1 , wherein the second optical element comprises a light guide.6. The absorber device according to claim 1 , wherein the ...

WAFER-LEVEL INTEGRATED OPTO-ELECTRONIC MODULE

A method to manufacture optoelectronic modules comprises a step of providing a first wafer comprising a plurality of first module portions, wherein each of the first module portions comprises at least one passive optical component, providing a second wafer comprising a plurality of second module portions, wherein each of the second module portions comprises at least one optoelectronic component. The wafers are disposed on each other to provide a wafer stack that is diced into individual optoelectronic modules respectively comprising one of the first and the second and the third module portions. 1. A method to manufacture optoelectronic modules , comprising:providing a first wafer comprising a plurality of first module portions, wherein each of the first module portions comprises at least one passive optical component, wherein the at least one passive optical component has a first and a second side and is configured to modify a beam of light such that a direction of light coupled in the at least one passive optical component at the first side is changed and coupled out of the at least one passive optical component at the second side;providing a second wafer comprising a plurality of second module portions, wherein each of the second module portions comprises at least one optoelectronic component and metalized via holes extending in a material of the second wafer from a first surface of the second wafer to a second opposite surface of the second wafer, wherein the respective at least one optoelectronic component of the second module portions is electrically connected to the respective metalized via holes of the second module portions;providing a third wafer comprising a plurality of third module portions, wherein each of the third module portions comprises at least one electronic component;bonding the second wafer onto the third wafer such that the respective at least one electronic component of the third module portions is electrically coupled to the respective at ...

PHOTOELECTRIC HYBRID BOARD, INFORMATION PROCESSOR, AND METHOD FOR MANUFACTURING PHOTOELECTRIC HYBRID BOARD

A photoelectric hybrid board includes: a first board on which a circuit is formed; an optical waveguide layer stacked with the first board; a first optical waveguide section formed in a direction of stacking in the first board and the optical waveguide layer; and a concave part formed, from the optical waveguide layer side, in the optical waveguide layer in an intersection part of the optical waveguide layer and the first optical waveguide section. 1. A photoelectric hybrid board comprising:a first board on which a circuit is formed;an optical waveguide layer stacked with the first board;a first optical waveguide section formed in a direction of stacking in the first board and the optical waveguide layer; anda concave part formed, from the optical waveguide layer side, in the optical waveguide layer in an intersection part of the optical waveguide layer and the first optical waveguide section.2. The photoelectric hybrid board according to claim 1 ,wherein the concave part has a conical surface that extends conically.3. The photoelectric hybrid board according to claim 1 ,wherein the conical surface has a reflection surface inclined to the optical waveguide layer at an angle of 45 degrees, and the reflection surface reflects light entering the first optical waveguide section to the optical waveguide layer.4. The photoelectric hybrid board according to claim 1 , further comprising:a second board arranged on an opposite side to the first board on the optical waveguide layer; andthe second board has a cylindrical opening connecting to the concave part.5. The photoelectric hybrid board according to claim 4 ,wherein a centerline of the opening is displaced from a centerline of the first optical waveguide section.6. The photoelectric hybrid board according to claim 4 ,wherein an inside diameter of the opening is larger than a width of the first optical waveguide section.7. The photoelectric hybrid board according to claim 1 , further comprising:a light emitting section ...

MULTI-TIERED PHOTONIC STRUCTURES

A system and method for improving VLSI of photonic components such as by improved volumetric packing density that preserves and/or enhances photonic operations and functions. Optical vias are distributed throughout a multi-tiered photonic device. These optical vias are optically communicated with different types of path optics to allow photonic information to be accessed, processed, and transmitted by photonic processing elements distributed on the various tiers. 1. The apparatus substantially as disclosed herein.2. The method substantially as disclosed herein. This application claims benefit of U.S. Patent Application No. 62/308,687 filed 15 Mar. 2016, and this application is related to U.S. patent application Ser. No. 12/371,461 filed 13 Feb. 2009 and related to U.S. Patent Application No. 62/308,585 filed 15 Mar. 2016, the contents of which are all hereby expressly incorporated by reference thereto in their entireties for all purposes.The present invention relates generally to device volumetric structure efficiency, and more specifically, but not exclusively, to improving operational density of photonic devices, structures, integrations, and assemblies. The present invention further relates generally to signal and data processing devices, including the general domain of “computer chips,” telecom signal process devices, sensor devices, and display devices and all other data/signal processing devices, and more specifically, but not exclusively, to three-dimensional (3D) or multilayer devices in which data processing and computing and signal processing and transmission, alteration, manipulation, and modification is handled on more than one planar level of the device and in which such data may be passed between those layers as well as input and output from the device itself to some other device, connection, network, or system.The subject matter discussed in the background section should not be assumed to be prior art merely as a result of its mention in the ...

ELECTRO-OPTICAL INTERCONNECT PLATFORM

An electro-optical interconnection platform is provided. The platform includes an interface medium; a plurality of optical pads; a plurality of electrical pads; and at least one beam coupler adapted to optically couple at least one pair of optical pads of the plurality of optical pads, wherein the at least one pair of optical pads are placed on opposite sides of the interface medium. 1. An electro-optical interconnection platform , comprising:an interface medium;a plurality of optical pads;a plurality of electrical pads; andat least one beam coupler adapted to optically couple at least one pair of optical pads of the plurality of optical pads, wherein the at least one pair of optical pads are placed on opposite sides of the interface medium.2. The electro-optical interconnection platform of claim 1 , wherein an electrical pad of the plurality of electrical pads is connected to an electrical component.3. The electro-optical interconnection platform of claim 2 , wherein the electrical component includes any one of: an analog circuit claim 2 , a digital circuit claim 2 , and an analog-digital circuit.4. The electro-optical interconnection platform of claim 2 , wherein two or more electrical pads of the plurality of electrical pads are connected to each other through vias.5. The electro-optical interconnection platform of claim 1 , wherein an optical pad of the plurality of optical pads is connected to an optical component.6. The electro-optical interconnection platform of claim 5 , wherein the optical component includes any one of: a passive optical component claim 5 , an active optical component claim 5 , and a passive-active optical component.7. The electro-optical interconnection platform of claim 1 , wherein optical components and electrical components are connected to the platform using a die stacking process.8. The electro-optical interconnection platform of claim 1 , wherein each of the plurality of optical pads is structured as any one of: a curved mirror claim ...

ON-CHIP OPTICAL POLARIZATION CONTROLLER

An example optical polarization controller can include a substantially planar substrate and a waveguide unit cell formed on the substantially planar substrate. The waveguide unit cell can include a first out-of-plane waveguide portion and a second out-of-plane waveguide portion coupled to the first out-of-plane waveguide portion. Each of the first and second out-of-plane waveguide portions can respectively include a core material layer arranged between a first optical cladding layer having a first stress-response property and a second optical cladding layer having a second stress-response property. The first and second stress-response properties can be different such that each of the first and second out-of-plane waveguide portions is deflected by a deflection angle. 1. An optical polarization controller , comprising:a substantially planar substrate; anda waveguide unit cell formed on the substantially planar substrate, the waveguide unit cell comprising:a first out-of-plane waveguide portion, anda second out-of-plane waveguide portion coupled to the first out-of-plane waveguide portion, wherein each of the first and second out-of-plane waveguide portions respectively includes a core material layer arranged between a first optical cladding layer having a first stress-response property and a second optical cladding layer having a second stress-response property that is different than the first stress-response property such that each of the first and second out-of-plane waveguide portions is deflected by a deflection angle, and wherein the first out-of-plane waveguide portion or the second out-of-plane waveguide portion forms a bend in a direction that is different than a direction of deflection.2. The optical polarization controller of claim 1 , wherein at least one of the first out-of-plane waveguide portion or the second out-of-plane waveguide portion is deflected toward or away from the substantially planar substrate.3. The optical polarization controller of claim ...

DEPOSITED SI PHOTODETECTORS FOR SILICON NITRIDE WAVEGUIDE BASED OPTICAL INTERPOSER

Embodiments herein describe optical interposers that utilize waveguides to detect light. For example, in one embodiment, an apparatus is provided that includes an optical detector having a first layer. The first layer includes at least one of polysilicon or amorphous silicon. The first layer forms a diode that includes a p-doped region and an n-doped region. The apparatus further includes a waveguide optically coupled to the diode and disposed on a different layer than the first layer. 1. Apparatus comprising:an optical detector comprising a first layer comprising at least one of polysilicon and amorphous silicon, wherein the first layer forms a diode, wherein the diode comprises a p-doped region and an n-doped region; anda waveguide optically coupled to the diode and disposed on a different layer than the first layer.2. The apparatus of wherein the waveguide is formed from one of silicon claim 1 , silicon nitride claim 1 , silicon oxy-nitride claim 1 , amorphous silicon claim 1 , a polymer claim 1 , and polysilicon.3. The apparatus of wherein the n-doped region is disposed on a first end of the first layer and the p-doped region is disposed on a second claim 1 , opposite end of the first layer.4. The apparatus of wherein the first layer comprises:a first surface;a first electrical contact contacts the first surface in the p-doped region; anda second electrical contact contacts the first surface in the n-doped region, wherein the waveguide is in a facing relationship with the first surface and is disposed between the first electrical contact and the second electrical contact.5. The apparatus of wherein the first layer comprises an intrinsic region disposed between the n-doped and p-doped regions diode claim 1 , wherein the waveguide is disposed on an axis that extends through the intrinsic region and is perpendicular to the first layer.6. The apparatus of wherein the first layer comprises:a first surface; anda second surface that is opposite to the first surface, ...

MODULE WITH TRANSMIT OPTICAL SUBASSEMBLY AND RECEIVE OPTICAL SUBASSEMBLY

An optoelectronic module. In some embodiments, the module includes: a housing, a substantially planar subcarrier, a photonic integrated circuit, and an analog electronic integrated circuit. The subcarrier has a thermal conductivity greater than 10 W/m/K. The photonic integrated circuit and the analog electronic integrated circuit are secured to a first side of the subcarrier, and the subcarrier is secured to a first wall of the housing. A second side of the subcarrier, opposite the first side of the subcarrier, is parallel to, secured to, and in thermal contact with, an interior side of the first wall of the housing. 1. A transceiver assembly , comprising:a housing; andan optical subassembly, a fiber,', 'a photonic integrated circuit,', 'an analog electronic integrated circuit, and', 'a substantially planar subcarrier;, 'the optical subassembly comprisingthe subcarrier having a thermal conductivity greater than 10 W/m/K;the photonic integrated circuit and the analog electronic integrated circuit being on the subcarrier;the fiber being coupled to the photonic integrated circuit;the subcarrier being parallel to, secured to, and in thermal contact with, a first wall of the housing;the photonic integrated circuit being connected to the analog electronic integrated circuit; andthe optical subassembly having a plurality of contact pads for establishing electrical connections between the analog electronic integrated circuit and test equipment probes, the optical subassembly being configured to be separately testable by supplying power to the optical subassembly through one or more of the contact pads and sending data to and and/or receiving data from the optical subassembly through one or more of the contact pads.2. The transceiver assembly of claim 1 , wherein the analog electronic integrated circuit is adjacent to the photonic integrated circuit and connected to the photonic integrated circuit by a first plurality of wire bonds.3. The transceiver assembly of claim 2 , ...

METHOD FOR MANUFACTURING OPTICAL DEVICE, OPTICAL DEVICE, AND MANUFACTURING DEVICE FOR OPTICAL DEVICE

A method for manufacturing an optical device includes: a laser irradiation step of condensing pulsed first laser light and pulsed second laser light to the inside of a glass member including germanium and titanium; and a condensing position movement step of moving condensing positions relatively to the glass member. Each of the first laser light and the second laser light has a repetition frequency of 10 kHz or greater. The first laser light is condensed to a dot-shaped condensing region, and the second laser light is condensed to an annular condensing region surrounding the condensing region of the first laser light. A central wavelength of the first laser light is greater than 400 nm and equal to or less than 700 nm, and a central wavelength of the second laser light is equal to or greater than 800 nm and equal to or less than 1100 nm. 1. A method for manufacturing an optical device , comprising:a laser irradiation step of condensing pulsed first laser light and pulsed second laser light in a glass member including germanium and titanium to cause a photo-induced refractive index variation in the glass member; anda condensing position movement step of moving condensing positions of the first laser light and the second laser light relatively to the glass member,wherein each of the first laser light and the second laser light has a repetition frequency of 10 kHz or greater,the laser irradiation step includes condensing the first laser light to a dot-shaped condensing region and condensing the second laser light to an annular condensing region surrounding the condensing region of the first laser light,the first laser light has a central wavelength greater than 400 nm and equal to or less than 700 nm, and the second laser light has a central wavelength equal to or greater than 800 nm and equal to or less than 1100 nm, andthe laser irradiation step and the condensing position movement step are alternately repeated or are performed in parallel to form a continuous ...

METHOD FOR PRODUCING AN INTEGRATED OPTICAL CIRCUIT

A method for producing an integrated optical circuit comprising an active device and a passive waveguide circuit includes: applying an active waveguide structure on a source wafer substrate; exposing a portion of the source wafer substrate by selectively removing the active waveguide structure; applying a passive waveguide structure on the exposed portion of the source wafer substrate, wherein an aggregation of the active waveguide structure and the passive waveguide structure forms the active device, the active device having a bottom surface facing the source wafer substrate; removing the source wafer substrate from the active device; and attaching the active device to a target substrate comprising the passive waveguide circuit such that the bottom surface of the active device faces the target substrate. 1. A method for producing an integrated optical circuit comprising an active device and a passive waveguide circuit , the method comprising:applying an active waveguide structure on a source wafer substrate;exposing a portion of the source wafer substrate by selectively removing the active waveguide structure;applying a passive waveguide structure on the exposed portion of the source wafer substrate, wherein an aggregation of the active waveguide structure and the passive waveguide structure forms the active device, the active device having a bottom surface facing the source wafer substrate;removing the source wafer substrate from the active device; andattaching the active device to a target substrate comprising the passive waveguide circuit such that the bottom surface of the active device faces the target substrate.2. The method of claim 1 , comprising:using an intermediate substrate to attach the active device to the target substrate.3. The method of claim 1 , comprising:using transfer printing to attach the active device to the target substrate.4. The method of claim 1 ,wherein applying the active waveguide structure on the source wafer substrate comprises ...

Method of manufacturing semiconductor devices, corresponding device and circuit

A method of manufacturing semiconductor devices includes: coupling first and the second substrates by coupling a back surface of the second substrate with a front surface of the first substrate, thereby producing a step-like structure, with an uncovered portion of the front surface of the first substrate left uncovered by the second substrate coupling a first integrated circuit with the uncovered portion of the front surface of the first substrate; and coupling a second integrated circuit with the second substrate and the first integrated circuit by arranging the second integrated circuit extending bridge—like between the second substrate and the first integrated circuit.

Structures and methods for high speed interconnection in photonic systems

Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

PROCESS FOR MAKING HIGH MULTIPLEX ARRAYS

Processes for making high multiplex arrays for use in analyzing discrete reactions at ultra high multiplex with reduced optical noise, and increased system flexibility. The high multiplex arrays include substrates having integrated optical components that increase multiplex capability by one or more of increasing density of reaction regions, improving transmission of light to or collection of light from discrete reactions regions. Integrated optical components include reflective optical elements which re-direct illumination light and light emitted from the discrete regions to more efficiently collect emitted light. Particularly preferred applications include single molecule reaction analysis, such as polymerase mediated template dependent nucleic acid synthesis and sequence determination. 1. A method for producing a substrate comprising an array of micromirrors wherein each micromirror is associated with a zero-mode waveguide comprising:a) providing a transparent substrate having a top surface;b) patterning and etching the transparent substrate to form an array of protrusions having tops and sides;c) depositing a cladding material such that the tops of the protrusions comprise a cladding;d) forming an array of apertures through the cladding such that the top of each protrusion comprises an aperture; ande) depositing a reflective deposition material such that the sides of the each protrusions comprise a reflective layer; whereby the array of protrusions comprise an array of micromirrors, and the aperture at the top of each protrusion comprises a zero-mode waveguide.2. The method of wherein step b) of patterning and etching the transparent substrate is carried out after steps c) and d) of depositing the cladding material and forming the array of apertures.3. The method of wherein steps c) and d) of depositing the cladding material and forming the array of apertures are carried out after step b) of patterning and etching the transparent substrate.4. The method of ...

INTEGRATED PHOTONIC DEVICE WITH IMPROVED OPTICAL COUPLING

A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal. 1. A three-dimensional photonic integrated structure , including:a support substrate;a first insulating layer on said support substrate;a first semiconductor layer on said first insulating layer, wherein the first semiconductor layer is patterned to include a first semiconductor waveguide and a first semiconductor region;a second insulating layer on said first semiconductor layer;a third insulating layer on said second insulating layer; anda second semiconductor layer on said third insulating layer, wherein the second semiconductor layer is patterned to include a second semiconductor waveguide and an optical coupler configured to receive a light signal.2. The structure of claim 1 , wherein the first insulating layer and first semiconductor layer are part of a first silicon on insulator substrate claim 1 , and wherein the third insulating layer and second semiconductor layer are part of a second silicon on insulator substrate.3. The structure of claim 1 , wherein the first semiconductor region and an overlying portion of the second insulating layer form a Bragg mirror.4. The structure of claim 1 , wherein a thickness of the first semiconductor region and a thickness of the first semiconductor waveguide are equal.5. The structure of claim 1 , wherein a thickness of a central portion of the first semiconductor region and a thickness the first semiconductor ...

METHODS AND SYSTEM FOR WAVELENGTH TUNABLE OPTICAL COMPONENTS AND SUB-SYSTEMS

Wavelength division multiplexing (WDM) has enabled telecommunication service providers to provide multiple independent multi-gigabit channels on one optical fiber.-To meet demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost monolithic optical circuit technologies and microelectromechanical systems (MEMS) have become increasingly important. However, further integration via microoptoelectromechanical systems (MOEMS) of monolithically integrated optical waveguides upon a MEMS provide further integration opportunities and functionality options. Such MOEMS may include MOEMS mirrors and optical waveguides capable of deflection under electronic control. In contrast to MEMS devices where the MEMS is simply used to switch between two positions the state of MOEMS becomes important in all transition positions. Improvements to the design and implementation of such MOEMS mirrors, deformable MOEMS waveguides, and optical waveguide technologies supporting MOEMS devices are presented where monolithically integrated optical waveguides are directly supported, moved and/or deformed by a MEMS. 1. A device comprising:an optical waveguide structure comprising a first predetermined portion formed from a plurality of three-dimensional (3D) optical waveguides for routing an optical signal upon a substrate and a second predetermined portion comprising an input 3D optical waveguide for routing the optical signals from a first subset of the plurality of 3D optical waveguides to or from the input 3D optical waveguide; anda rotational microoptoelectromechanical (MOEMS) element comprising a pivot and an actuator supporting the input 3D optical waveguide; whereina predetermined rotation of the MOEMS element under the motion of the actuator results in an alignment of the input 3D optical waveguide with a predetermined 3D optical waveguide of the first subset of the plurality of 3D optical ...

METHODS AND SYSTEM FOR WAVELENGTH TUNABLE OPTICAL COMPONENTS AND SUB-SYSTEMS

Wavelength division multiplexing (WDM) has enabled telecommunication service providers to provide multiple independent multi-gigabit channels on one optical fiber.-To meet demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost monolithic optical circuit technologies and microelectromechanical systems (MEMS) have become increasingly important. However, further integration via microoptoelectromechanical systems (MOEMS) of monolithically integrated optical waveguides upon a MEMS provide further integration opportunities and functionality options. Such MOEMS may include MOEMS mirrors and optical waveguides capable of deflection under electronic control. In contrast to MEMS devices where the MEMS is simply used to switch between two positions the state of MOEMS becomes important in all transition positions. Improvements to the design and implementation of such MOEMS mirrors, deformable MOEMS waveguides, and optical waveguide technologies supporting MOEMS devices are presented where monolithically integrated optical waveguides are directly supported, moved and/or deformed by a MEMS. 1. An optical device comprising:a substrate; a rotatable microelectromechanical systems (MEMS) element; and', 'a first optical waveguide formed upon the rotatable MEMS element rotating under action of the rotatable MEMS element; and', 'a grating formed upon the rotatable MEMS element optically coupled to a facet of the first optical waveguide;, 'a rotational microoptoelectromechanical systems (MOEMS) element integrated upon the substrate in a first predetermined position comprisinga second optical waveguide integrated upon the substrate having a first end disposed at a first predetermined position with respect to the rotational MOEMS element; whereinrotation of the grating under action of the rotatable MEMS element reflects a predetermined portion of optical signals coupled to it from the ...

METHODS AND SYSTEM FOR WAVELENGTH TUNABLE OPTICAL COMPONENTS AND SUB-SYSTEMS

Wavelength division multiplexing (WDM) has enabled telecommunication service providers to provide multiple independent multi-gigabit channels on one optical fiber. To meet demands for improved performance, increased integration, reduced footprint, reduced power consumption, increased flexibility, re-configurability, and lower cost monolithic optical circuit technologies and microelectromechanical systems (MEMS) have become increasingly important. However, further integration via microoptoelectromechanical systems (MOEMS) of monolithically integrated optical waveguides upon a MEMS provide further integration opportunities and functionality options. Such MOEMS may include MOEMS mirrors and optical waveguides capable of deflection under electronic control. In contrast to MEMS devices where the MEMS is simply used to switch between two positions the state of MOEMS becomes important in all transition positions. Improvements to the design and implementation of such MOEMS mirrors, deformable MOEMS waveguides, and optical waveguide technologies supporting MOEMS devices are presented where monolithically integrated optical waveguides are directly supported, moved and/or deformed by a MEMS. 1. An optical source comprising:a substrate;an optical cavity comprising a first high reflectivity facet, a second high reflectivity facet, and a semiconductor optical amplifier (SOA) disposed between the first high reflectivity facet and the second high reflectivity facet; whereinthe first high reflectivity facet comprises at least a tunable optical wavelength filter employing a rotational microoptoelectromechanical (MOEMS) element integrated upon the substrate;the first high reflectivity facet has a high reflectivity over a predetermined bandwidth determined by the tunable optical wavelength filter; anda center wavelength of the optical source can be set to one of a plurality of predetermined wavelengths within a predetermined wavelength range based upon setting the tunable optical ...

SUBSTRATE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE STRUCTURE

A substrate for a semiconductor device includes a polymer material filling at least one through hole extending through the substrate. and at least one optical waveguide disposed within the through hole and extending through the polymer material. A refractive index of the optical waveguide is greater than a refractive index of the polymer material. 17-. (canceled)8. A semiconductor device , comprising:a first substrate comprising:a polymer material filling at least one through hole in the first substrate; anda plurality of optical waveguides disposed within the through hole and extending through the polymer material, wherein the optical waveguides include a first optical waveguide and a second optical waveguide, and a direction of light transmission in the first optical waveguide is different from a direction of light transmission in the second optical waveguide;a first semiconductor die disposed on and electrically connected to the first substrate;a first optical device electrically connected to the first substrate, the first optical device disposed above the optical waveguide;a second substrate electrically connected to the first substrate;a second semiconductor die disposed on and electrically connected to the second substrate; anda second optical device electrically connected to the second substrate, wherein the second optical device is disposed under the optical waveguide.9. The semiconductor device according to claim 8 , wherein the first substrate further comprises a first metal layer claim 8 , the second substrate comprises a second metal layer claim 8 , the first semiconductor die is electrically connected to the first optical device through the first metal layer claim 8 , the second semiconductor die is electrically connected to the second optical device through the second metal layer claim 8 , and the first optical device is optically coupled to the second optical device through the optical waveguides.10. The semiconductor device according to claim 8 , ...

METHOD AND SYSTEM FOR HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector. 1. A hybrid integrated optical device comprising:a substrate;a first pad, disposed on a first region of the substrate and bonded to the substrate;a device;a second pad, disposed on a first region of the device and bonded to the device; and [{'sub': 0.7', '0.3, 'the bonding metal comprises InPd;'}, 'the bonding metal is disposed between the first pad and the second pad;', 'the bonding metal is bonded to the first pad and the second pad; and', 'the bonding metal, the first pad, and the second pad secure the device to the substrate., 'a bonding metal, wherein2. The hybrid integrated optical device of claim 1 , wherein:the first pad comprises at least one of Ti, Cr, Pt, Ni or W; andthe second pad comprises at least one of Ti, Cr, Pt, Ni or W.3. The hybrid integrated optical device of claim 1 , wherein:the substrate comprises a waveguide; andthe device is a compound semiconductor device that emits light, wherein the light is optically coupled into the waveguide.4. The hybrid integrated optical device of claim 1 , wherein the substrate is a silicon-on-insulator substrate comprising a silicon handle portion claim 1 , an oxide layer claim 1 , and a silicon layer.5. The hybrid integrated optical device of claim 4 , wherein a first portion of the silicon layer forms a recess proximate the first pad claim 4 , and wherein a height of the device exceeds a height of a second portion of the silicon layer.6. The hybrid integrated optical device of claim 4 , wherein a first ...

SPARSE TRUSS STRUCTURES AND METHODS OF MAKING THE SAME

A sparse micro-truss structure having a series of unit cells arranged in an array is disclosed. Each of the unit cells includes a series of struts interconnected at a node. Adjacent unit cells are spaced apart by a gap. Spacing apart the adjacent unit cells is configured to reduce the sensitivity of the sparse micro-truss structure to premature mechanical failure due to buckling in one or more of the struts compared to related art micro-truss structures having a series of fully interconnected unit cells. 1. A micro-truss structure , comprising: each of the plurality of unit cells comprises a plurality of struts interconnected at a node, and', 'adjacent ones of at least two of the plurality of unit cells are spaced apart by a gap., 'a plurality of unit cells arranged in an array, wherein2. The micro-truss structure of claim 1 , wherein the array is rectilinear.3. The micro-truss structure of claim 1 , wherein the plurality of unit cells comprises:a first plurality of unit cells arranged in a first row of the array; anda second plurality of unit cells arranged in a second row of the array.4. The micro-truss structure of claim 3 , wherein the array is a staggered array claim 3 , and wherein the second plurality of unit cells in the second row of the array is laterally offset from the first plurality of unit cells in the first row of the array.5. The micro-truss structure of claim 4 , wherein at least one of the struts in each of the first plurality of unit cells in the first row is interconnected to one of the struts in one of the second plurality of unit cells in the second row.6. The micro-truss structure of claim 3 , wherein the second plurality of unit cells in the second row of the array is aligned with the first plurality of unit cells in the first row of the array claim 3 , and wherein each of the second plurality of unit cells is spaced apart by a gap from a corresponding one of the first plurality of unit cells.7. The micro-truss structure of claim 1 , wherein ...

Dual Band Color Filter

A dual hand color filter includes a periodic arrangement of metallic dots in a middle transparent medium, having index of refraction, interposed between a first and a second transparent medium, each having an index of refraction greater than the middle transparent medium index of refraction. The filter accepts visible spectrum light. In response to the periodic arrangement of metallic dots, a surface plasmon mode is generated. In response to a diameter common to all the metallic dots, a local mode is generated, and in response to the combination of the middle, first, and second transparent medium indices of refraction, a waveguide mode is generated. As a result, two distinct wavelength hands of visible spectrum light are transmitted through the bottom surface of the dual band color filter, while attenuating one wavelength band of visible spectrum light. 1. A method for transmitting two bands of visible spectrum light while attenuating a third hand of visible spectrum light , the method comprising:providing a dual band color filter comprising a periodic arrangement of metallic dots in a middle transparent medium, having an index of refraction, interposed between a first and a second transparent medium, each having an index of refraction greater than the middle transparent medium index of refraction;accepting visible spectrum light incident to a top surface of the dual band color filter;in response to the periodic arrangement of metallic dots, generating a surface plasmon mode;in response to a diameter common to all the metallic dots, generating a local mode;in response to the combination of the middle, first, and second transparent medium indices of refraction, generating a waveguide mode; and,in response to the combination of the surface plasmon mode, local mode, and waveguide mode, transmitting two distinct wavelength bands of visible spectrum light through a bottom surface of the dual band color filter, and attenuating one wavelength hand of visible spectrum light ...

Photonic Imaging Array

A multi-beam optical phased array on a single planar waveguide layer or a small number of planar waveguide layers enables building an optical sensor that performs much like a significantly larger telescope. Imaging systems use planar waveguides created using micro-lithographic techniques. These imagers are variants of “phased arrays,” common and familiar from microwave radar applications. However, there are significant differences when these same concepts are applied to visible and infrared light. 1. An imaging system having a design wavelength between about 100 nm and about 1 mm and a design bandwidth , the imaging system comprising:a wafer;a plurality of optical couplers disposed in a predefined planar array on the wafer, each optical coupler having an output and configured to couple an optical signal from free space to the output;a plurality of optical combiners disposed in a first plane on the wafer, the first plane being parallel to the planar array of the plurality of optical couplers, each optical combiner having a plurality of inputs and a plurality of outputs;a plurality of optical detectors disposed in a second plane on the wafer, the second plane being parallel to the planar array of the plurality of optical couplers, each optical detector having an input; anda plurality of optical waveguides disposed in a third plane on the wafer, the third plane being parallel to the planar array of the plurality of optical couplers; wherein:the outputs of the plurality of optical couplers are coupled, in a hierarchical arrangement by the plurality of optical combiners and groups of the plurality of optical waveguides, to the inputs of the plurality of optical detectors, such that optical lengths of the optical waveguides in each group of optical waveguides are equal, within one coherence length at a bandwidth greater than about 0.1% plus a spacing between two maximally spaced-apart optical couplers of the plurality of optical couplers.2. An imaging system according to ...

Optical modulator robust to fabrication errors

An optical modulator includes a first arm and a second arm, each arm includes an arrangement with an equal amount of p-doped material and an equal amount of n-doped material, such that mask misalignment causes a same effect in both arms; and each arm includes a plurality of segments where electrodes connect for push-pull operation of the first arm and the second arm. 1. An optoelectronic integrated circuit , comprising:a first back-to-back-junction component (BBJC) and a second BBJC that conform to a first fabrication pattern, wherein the first BBJC comprises a first group A p-n junction (APNJ) in series with a first group B p-n junction (BPNJ), wherein the second BBJC comprises a second APNJ in series with a second BPNJ; andan optical component conforming to a second fabrication pattern that superimposes the first fabrication pattern, wherein the optical component overlaps the first APNJ and the second APNJ to define a first p-type overlap region and a first n-type overlap region, wherein the optical component overlaps the first BPNJ and the second BPNJ to define a second p-type overlap region and a second n-type overlap region, the first p-type overlap region and the second p-type region are substantially same size independent of a fabrication misalignment amount of the first fabrication pattern with respect to the second fabrication pattern, and', 'the first n-type overlap region and the second n-type region are substantially same size independent of the fabrication misalignment amount of the first fabrication pattern with respect to the second fabrication pattern., 'wherein the first APNJ, the first BPNJ, the second APNJ, and the second BPNJ are disposed along respective directions such that'}2. The optoelectronic integrated circuit of claim 1 ,wherein the first BBJC and the second BBJC have different doping type sequences,wherein the first BBJC and the second BBJC have a same electrical connection sequence,wherein the first APNJ and the second BPNJ are disposed ...

Semiconductor Device and Method of Manufacturing

A semiconductor device includes a first chip, a dielectric layer over the first chip, and a second chip over the dielectric layer. A conductive layer is embedded in the dielectric layer and is electrically coupled to the first chip and the second chip. The second chip includes an optical component. The first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer. 1. A device comprising:a first chip comprising active devices;a dielectric layer over the first chip;a conductive layer embedded in the dielectric layer, the conductive layer comprising a first portion electrically coupled to the first chip, and a second portion forming a mirror;a second chip over the dielectric layer, the second chip electrically coupled to the first portion of the conductive layer, the second chip comprising an optical component, wherein the first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer; anda waveguide optically coupled to the optical component of the second chip, wherein the mirror is configured to reflect a light transmitted between the optical component and the waveguide.2. The device of claim 1 , wherein the dielectric layer is transparent claim 1 , and the dielectric layer comprises:a first portion between the mirror and the waveguide; anda second portion between the mirror and the optical component.3. The device of claim 1 , wherein the dielectric layer has a major top surface claim 1 , and the mirror forms a 45 degree angle with the major top surface.4. The device of claim 1 , wherein the waveguide is in the dielectric layer.5. The device of further comprising an electrical connector claim 1 , and the first portion and the second portion of the conductive layer are portions of a continuous conductive line claim 1 , wherein the continuous conductive line is electrically connected to the electrical connector.6. The device ...

Process flow for fabricating integrated photonics optical gyroscopes

Aspects of the present disclosure are directed to configurations of compact ultra-low loss integrated photonics-based waveguides for optical gyroscope applications, and the methods of fabricating those waveguides for ease of large scale manufacturing. Four main process flows are described: (1) process flow based on a repeated sequence of oxide deposition and anneal; (2) chemical-mechanical polishing (CMP)-based process flow followed by wafer bonding; (3) Damascene process flow followed by oxide deposition and anneal, or wafer bonding; and (4) CMP-based process flows followed by oxide deposition. Any combination of these process flows may be adopted to meet the end goal of fabricating optical gyroscope waveguides in one or more layers on a silicon substrate using standard silicon fabrication technologies.

Optical Coupler

A semiconductor photonic device includes a substrate, facet(s), and optical coupler(s) associated with the facet(s). Each optical coupler can couple an electromagnetic field incident on the respective facet towards the substrate as the electromagnetic field proceeds into the semiconductor photonic device. In some examples, each coupler has waveguides extending in a longitudinal direction and at least partly encapsulated within corresponding cladding layers. A first waveguide extends farther from the facet in the longitudinal direction than does a second waveguide. The second waveguide is located farther above the silicon substrate than is the first waveguide. The coupler can include a stack of waveguide assemblies. A lower waveguide assembly can include one waveguide. An intermediate or upper waveguide assembly can include multiple waveguides. In some examples, at least one waveguide tapers along its length.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer. 1. A semiconductor device comprising:a base substrate;an insulating layer formed on the base substrate;a first optical waveguide composed of a semiconductor layer formed on the insulating layer; anda first insulating film formed along an upper surface of the insulating layer and a front surface of the first optical waveguide,wherein a first peripheral edge portion of a first lower surface of the first optical waveguide is separated from the insulating layer, andthe first insulating film is buried between the first peripheral edge portion and the insulating layer.2. The semiconductor device according to claim 1 , further comprising:two of the first optical waveguides disposed to be spaced apart from each other in a first direction when seen in a plan view; anda second insulating film formed on the first insulating film,wherein the second insulating film is buried between the two first optical waveguides, with the first insulating film interposed therebetween.3. The semiconductor device according to claim 2 , further comprising:a third insulating film formed on the second insulating film,wherein the second insulating film has a flat upper surface.4. The semiconductor device according to claim 2 ,wherein the insulating layer is formed on the base substrate in a first region on a main surface side of the base substrate and in a second region on the main surface side of the base substrate, andthe two first optical waveguides are formed on the insulating layer in the first ...

PHOTONIC INTEGRATION PLATFORM

A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer. 1. A silicon-on-insulator (SOI) optical device comprising:a semiconductor substrate;an insulation layer disposed above the substrate, wherein a waveguide is embedded in the insulation layer; anda crystalline silicon layer above the insulation layer, the silicon layer comprising a silicon waveguide that overlaps the embedded waveguide such that an optical signal transmitted in the embedded waveguide is transferred to the silicon waveguide.2. The SOI optical device of claim 1 , wherein at least a portion of the embedded waveguide and a portion of the silicon waveguide are tapered where the embedded and silicon waveguides overlap in the optical device.3. The SOI optical device of claim 1 , wherein the embedded waveguide further comprises:a waveguide adapter comprising multiple prongs exposed at an external coupling surface of the optical device, the external coupling surface is configured to couple to an external light source.4. The SOI optical device of claim 3 , wherein the waveguide adapter comprises a first prong that is disposed above a second prong in the insulation layer relative to the substrate claim 3 , and wherein a dimension of the second prong decreases as the second prong extends away from the external coupling surface and a dimension of the first prong increases as the first prong extends away from the external coupling ...

INTEGRATED PHOTONIC DEVICE WITH IMPROVED OPTICAL COUPLING

A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal. 1. A three-dimensional photonic integrated structure , including:a first semiconductor substrate layer incorporating a first waveguide;a second semiconductor substrate layer incorporating a second waveguide;wherein the second semiconductor substrate layer comprises an optical coupler having a first side configured to receive a light signal; andan intermediate region located between the first and second semiconductor substrate layers and comprising at least one dielectric layer; andwherein the first semiconductor substrate layer and said at least one dielectric layer comprises a reflective element located below said optical coupler and opposite the first side of said optical coupler, the reflective element configured to reflect at least part of said light signal back towards said optical coupler;wherein the intermediate region further comprises an additional semiconductor layer coated by the at least one dielectric layer and located opposite the optical coupler, the reflective element further comprising said additional semiconductor layer.2. The structure according to claim 1 , wherein the reflective element comprises a portion of the first semiconductor substrate layer and a portion of said at least one dielectric layer.3. The structure according to claim 2 , where a product of a thickness of the portion of the first semiconductor substrate layer and its ...

ELECTRONIC-PHOTONIC INTEGRATED CIRCUIT BASED ON SILICON PHOTONICS TECHNOLOGY

Disclosed is a silicon photonics-based electronic-photonic integrated circuit (EPIC). The silicon photonics-based EPIC includes a silicon photonic integrated circuit (PIC) chip in which an optical device is mounted on a silicon-on-insulator (SOI) wafer including a trench region, an electronic integrated circuit (EIC) chip mounted in the trench region of the PIC chip, and an electrical interface configured to connect an electrode pad of the PIC chip and an electrode pad of the EIC chip. 1. A silicon photonics-based electronic-photonic integrated circuit (EPIC) , the EPIC comprising:a silicon photonic integrated circuit (PIC) chip in which an optical device is mounted on a silicon-on-insulator (SOI) wafer comprising a trench region;an electronic integrated circuit (EIC) chip mounted in the trench region of the PIC chip; andan electrical interface configured to connect an electrode pad of the PIC chip and an electrode pad of the EIC chip.2. The EPIC of claim 1 , wherein the EIC chip is mounted on a silicon substrate of the SOI wafer in the trench region from which cladding oxide claim 1 , silicon claim 1 , and buried oxide (BOX) of the SOI wafer are removed.3. The EPIC of claim 1 , wherein the EIC chip is fixed to a silicon substrate of the SOI wafer using a thermally conductive adhesive.4. The EPIC of claim 1 , wherein a depth of the trench region is determined such that the electrode pad of the PIC chip and the electrode pad of the EIC chip have a same height.5. The EPIC of claim 1 , wherein the electrode pad of the PIC chip and the electrode pad of the EIC chip are designed to have a same pitch spacing.6. A silicon photonics-based electronic-photonic integrated circuit (EPIC) claim 1 , the EPIC comprising:a silicon photonic integrated circuit (PIC) chip in which an optical device is mounted on a silicon-on-insulator (SOI) wafer comprising a first trench region and a second trench region;an electronic integrated circuit (EIC) chip mounted in the first trench region ...

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE WITH III-V OPTICAL INTERCONNECT HAVING III-V EPITAXIAL SEMICONDUCTOR MATERIAL FORMED USING LATERAL OVERGROWTH

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer. 1. An electrical device comprising:an optical interconnect positioned on a portion of the semiconductor substrate that is positioned between portions of a semiconductor substrate including electrical components, the optical interconnect is present on at least one interlevel dielectric layer that is present over at least one of the electrical components, the optical interconnect including a III-V light emission device and a III-V light detection device, wherein at least one material layer of the optical interconnect is an epitaxial material that is in direct contact with a semiconductor material layer of the substrate that is overlying a dielectric layer.2. The electrical device of claim 1 , wherein the semiconductor substrate is an SOI substrate.3. The electronic device of further comprising a dielectric waveguide positioned between the III-V light emission device and the III-V light detection device.4. The electronic device of claim 1 , wherein the electronic components comprises a switching device selected from the group consisting of field effect transistor (FET) claim 1 , fin field effect transistor (FinFET) claim 1 , metal oxide semiconductor ...

APPARATUS AND METHOD OF FORMING CHIP PACKAGE WITH WAVEGUIDE FOR LIGHT COUPLING

An apparatus and method of forming a chip package with a waveguide for light coupling is disclosed. The method includes depositing an adhesive layer over a carrier. The method further includes depositing a laser diode (LD) die having a laser emitting area onto the adhesive layer and depositing a molding compound layer over the LD die and the adhesive layer. The method still further includes curing the molding compound layer and partially removing the molding compound layer to expose the laser emitting area. The method also includes depositing a ridge waveguide structure adjacent to the laser emitting area and depositing an upper cladding layer over the ridge waveguide structure. 1. A method comprising:depositing a molding compound layer along a sidewall of a laser (LD) die having a laser emitting area, wherein the sidewall of the LD die is substantially perpendicular to a top surface of the molding compound layer;partially removing the molding compound layer to expose the laser emitting area, wherein after partially removing the molding compound layer, the top surface of the molding compound layer is disposed below a top surface of the LD die;forming a waveguide structure over the molding compound layer and along the laser emitting area, wherein the waveguide structure also extends along the sidewall of the LD die; anddepositing an upper cladding layer over the waveguide structure.2. The method of claim 1 , wherein forming the waveguide structure comprises:depositing a waveguide layer over the LD die and the molding compound layer; andpatterning the waveguide layer to define the waveguide structure, wherein patterning the waveguide layer comprises a photolithographic technique.3. The method of claim 2 , wherein patterning the waveguide layer further defines a via extending through the waveguide layer and exposing the LD die.4. The method of further comprising forming a redistribution layer communicatively coupling the LD die and an integrated circuit (IC) die claim ...

GUIDE TRANSITION DEVICE AND METHOD

A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane. 1. A guide transition device comprising:a light source designed to generate a light beam;a light input port on a first plane, the light input port being coupled to receive the light beam from the light source;a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment; andplane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane, the plane shifting apparatus being coupled to transfer the light beam to the light output port on the second plane.2. The guide transition device as claimed in wherein the light source includes a semiconductor laser.3. The guide transition device as claimed in wherein the semiconductor laser includes one of a distributed feedback laser claim 1 , a Fabry-Perot laser claim 1 , a distributed Bragg reflector laser claim 1 , a VCSEL claim 1 , or a tunable laser.4. The guide transition device as claimed in wherein the light output port is defined by a polymer waveguide positioned on the second plane claim 1 , the polymer waveguide receiving at a first end the beam of light from the plane shifting apparatus and defining the light output port at a second end.5. The guide transition device as claimed in wherein the polymer waveguide further defines ...

Apparatus and Method of Forming Chip Package with Waveguide for Light Coupling

An apparatus and method of forming a chip package with a waveguide for light coupling is disclosed. The method includes depositing an adhesive layer over a carrier. The method further includes depositing a laser diode (LD) die having a laser emitting area onto the adhesive layer and depositing a molding compound layer over the LD die and the adhesive layer. The method still further includes curing the molding compound layer and partially removing the molding compound layer to expose the laser emitting area. The method also includes depositing a ridge waveguide structure adjacent to the laser emitting area and depositing an upper cladding layer over the ridge waveguide structure. 1. A method comprising:disposing a laser diode (LD) die having a laser emitting area over a carrier;disposing an integrated circuit (IC) die adjacent the LD die;depositing a molding layer over the LD die and the IC die;partially removing the molding layer to expose the LD die and the IC die;depositing a dielectric layer over the molding layer and the LD die;patterning the dielectric layer to expose the LD die, wherein patterning the dielectric layer further defines a ridge waveguide structure adjacent the laser emitting area;forming a redistribution layer communicatively coupling the IC die to the LD die, the redistribution layer extending through the dielectric layer; anddepositing an upper cladding layer over the ridge waveguide structure.2. The method of claim 1 , patterning the dielectric layer comprises a photolithographic technique.3. The method of claim 1 , wherein patterning the dielectric layer to expose the LD die defines:a first via extending through the dielectric layer and exposing the LD die; anda second via extending through the dielectric layer and exposing the IC die.4. The method of claim 3 , wherein forming the redistribution layer comprises forming portions of the redistribution layer in the first via and the second via.5. The method of claim 1 , wherein depositing the ...

WAVEGUIDE WITH TAPERED ASSISTANT LAYER

An apparatus includes a waveguide extending along a light-propagation direction between a light source and a media-facing surface. An assistant layer is configured to receive light from a light source, the assistant layer has a terminating end with a first taper that narrows toward the media-facing surface. A core layer has a coupling end configured to receive light from the assistant layer, the coupling end having a second taper that widens toward the media-facing surface. A middle cladding layer is disposed between the core layer and the assistant layer. A near field transducer is disposed proximate the media-facing surface and configured to receive the light from the core layer. 1. An apparatus , comprising: an assistant layer configured to receive light from a light source, the assistant layer comprising a terminating end with a first taper that narrows toward the media-facing surface;', 'a core layer comprising a coupling end configured to receive light from the assistant layer, the coupling end comprising a second taper that widens toward the media-facing surface; and', 'a middle cladding layer disposed between the core layer and the assistant layer; and, 'a waveguide extending along a light-propagation direction between a light source and a media-facing surface, the waveguide comprisinga near field transducer disposed proximate the media-facing surface and configured to receive the light from the core layer.2. The apparatus of claim 1 , wherein the waveguide further comprises top and bottom cladding layers configured to confine the light within the core layer claim 1 , the assistant layer claim 1 , and the middle cladding layer.3. The apparatus of claim 1 , wherein the second taper has a first width claim 1 , the middle cladding layer is configured to increase the second taper first width by reducing an effective index of refraction of the core layer.4. The apparatus of claim 1 , wherein the core layer tapers from a first width proximate the light source to a ...

WAVEGUIDE WITH SHAPED ASSISTANT LAYER

An apparatus includes a waveguide extending along a light-propagation direction between a light source and a media-facing surface. The waveguide comprises an assistant layer configured to receive light from a light source, truncated with an intermediate bottom cladding layer. A core layer comprises a coupling end configured to receive light from the assistant layer. The coupling end comprises a taper that widens toward the media-facing surface. A near field transducer is disposed proximate the media-facing surface and is configured to receive the light from the core layer. 1. An apparatus , comprising:a waveguide extending along a light-propagation direction between a light source and a media-facing surface, the waveguide comprising:an assistant layer configured to receive light from a light source, truncated with an intermediate bottom cladding layer;a core layer comprising a coupling end configured to receive light from the assistant layer, the coupling end comprising a taper that widens toward the media-facing surface; anda near field transducer disposed proximate the media-facing surface and configured to receive the light from the core layer.2. The apparatus of claim 1 , wherein the assistant layer comprises an in-plane taper.3. The apparatus of claim 2 , wherein the in-plane taper is a linear taper.4. The apparatus of claim 2 , wherein the in-plane taper is a non-linear taper.5. The apparatus of claim 2 , wherein the assistant layer comprises a termination end with a taper that narrows towards the media facing surface.6. The apparatus of claim 1 , wherein the assistant layer further comprises an out of plane step.7. The apparatus of claim 6 , wherein the out-of-plane step is located near an interface between the assistant and the intermediate bottom cladding layer8. The apparatus of claim 6 , wherein a width of the out-of-plane step is between about 20 nm and 100 nm.9. The apparatus of claim 1 , wherein the assistant layer further comprises an out-of-plane ...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

A semiconductor structure is disclosed. The semiconductor structure includes: a substrate and a gate element over the substrate. The gate element includes: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; and a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode. A manufacturing method of the same is also disclosed. 1. A semiconductor structure , comprising: a gate dielectric layer;', 'a gate electrode over the gate dielectric layer;', 'and', 'a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode, and further extending into the gate electrode., 'a gate element, the gate element including2. The semiconductor structure of claim 1 , wherein the waveguide is filled with air.3. The semiconductor structure of claim 1 , further comprising a pair of spacers formed along sidewalls of the gate dielectric layer and the gate electrode.4. The semiconductor structure of claim 1 , wherein the waveguide extends into the gate electrode without passing through the gate electrode.5. The semiconductor structure of claim 1 , further comprising a contact etch stop layer covering a top surface of the gate electrode.6. The semiconductor structure of claim 1 , wherein the gate electrode includes polysilicon.7. The semiconductor structure of claim 1 , wherein the waveguide has a tapered structure.8. The semiconductor structure of claim 1 , wherein the waveguide has a round bottom.9. A semiconductor structure claim 1 , comprising:a substrate; anda waveguide over the grating coupler; andwherein a sidewall of the waveguide is encompassed by a gate element, and the gate element includes a gate dielectric layer, a gate electrode and a pair of spacers along sidewalls of the gate dielectric layer and the gate electrode, wherein the gate dielectric layer includes a recessed region, and the waveguide fills ...

Contact Image Sensor Using Switchable Bragg Gratings

A contact image sensor comprises: a light source providing a collimated beam; a detector and a switchable grating array comprising first and second transparent substrates sandwiching an array of switchable grating elements with transparent electrodes applied to said substrates, said substrates together providing a total internal reflection light guide. A first transmission grating layer overlays said first substrate. A second transmission grating layer overlays said second substrate. A quarter wavelength retarder layer overlays said second transmission grating layer. A platen overlays said quarter wavelength retarder layer; a polarization-rotating reflecting layer overlaying said first transmission grating layer. An input coupler for directing light from said light source into said light guide and an output coupler for extracting light out of said light guide towards said detector are also provided. 1. An imaging sensor comprising:a source of light for illuminating an object;an array of switchable grating elements;a plurality of detector elements; anda plurality of cores optically coupled to said array of switchable grating elements, each core comprising a high index region adjacent a low index region for waveguiding light reflected by said object onto said array towards a unique detector element,wherein said imaging sensor is configured to perform a sequence of switching steps, wherein in each step at least one grating element is switched into a diffracting state to direct light reflected from said object towards at least one of said detector elements via at least one of said cores with all other grating elements remain in their non-diffracting states.2. The imaging sensor of claim 1 , wherein said array of switchable grating elements is configured to couple light from said source towards said object claim 1 , wherein in each said switching step one grating element is switched into a diffracting state to direct light towards said object claim 1 , one grating ...

Semiconductor Device and Method of Manufacturing

A semiconductor device includes a first chip, a dielectric layer over the first chip, and a second chip over the dielectric layer. A conductive layer is embedded in the dielectric layer and is electrically coupled to the first chip and the second chip. The second chip includes an optical component. The first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer. 1. A method comprising:forming a dielectric layer;forming a redistribution layer comprising a first redistribution line, wherein the first redistribution line comprises a first portion extending into an opening in the dielectric layer, and a second portion over the dielectric layer;forming a waveguide extending into the opening; andbonding an optical chip to electrically connect to the redistribution layer, wherein the optical chip further comprises an optical component configured to optically communicate with the waveguide.2. The method of claim 1 , wherein the redistribution layer further comprises a second redistribution line extending into the dielectric layer claim 1 , and wherein the optical chip is bonded to the second redistribution line.3. The method of claim 1 , wherein the waveguide is formed at a position physically spaced apart from the first portion of the first redistribution line.4. The method of further comprising filling a transparent dielectric material into the opening.5. The method of claim 4 , wherein the transparent dielectric material physically contacts both of the first redistribution line and the waveguide.6. The method of claim 1 , wherein the first portion of the first redistribution line is vertically aligned to the optical component claim 1 , and horizontally aligned to the waveguide.7. The method of further comprising:encapsulating an electrical chip in an encapsulating material; andrevealing a contact pad of the electrical chip, wherein the dielectric layer is formed on the contact pad.8. The method of ...

GUIDE TRANSITION DEVICE WITH DIGITAL GRATING DEFLECTORS AND METHOD

A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus including one or more digital gratings each designed to deflect the light beam approximately ninety degrees. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane. 19-. (canceled)10. A guide transition device comprising:a light source designed to generate a light beam;a light input port on a first plane, the light input port being coupled to receive the light beam from the light source;a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment; andplane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane, the plane shifting apparatus including one or more digital gratings each designed to deflect the light beam approximately ninety degrees, the plane shifting apparatus being coupled to transfer the light beam to the light output port on the second plane;wherein the plane shifting apparatus includes a first digital grating positioned on the first plane and a second digital grating positioned on the second plane, the first digital grating positioned to receive the light beam from the light input port and to deflect the light beam to the second digital grating, and the second digital grating positioned to deflect the light beam into light communication with the output port.11. The guide ...

BACK END OF LINE PROCESS INTEGRATED OPTICAL DEVICE FABRICATION

An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer. 120-. (canceled)21. An optical device , comprising:a substrate;a device layer on the substrate;a first layer comprising a dielectric over the device layer;a second layer comprising a first stop layer on the first layer;a third layer comprising a dielectric over the first stop layer;a fourth layer comprising a second stop layer on the third layer;a metal stack for connection to external contacts including a first metal portion in a first portion of the third layer, and a first metal via for connecting the first metal portion to the device layer;an optical coupler comprising a waveguide in a portion of at least one of the first or the second stop layers for coupling light into or out of the device layer.22. The device according to claim 21 , wherein the optical coupler comprises a first waveguide in a portion of the first stop layer claim 21 , and a second waveguide in a portion of the second stop layer for coupling light into or out of the device layer.23. The device according to claim 22 , further comprising:a fifth layer comprising a dielectric over the second stop layer; anda sixth layer comprising a third stop layer over the fifth layer;a seventh layer comprising a dielectric over the third stop layer;wherein the optical coupler comprises a third waveguide in a portion of the third stop layer; andwherein the metal stack includes a second metal portion in a first portion of the seventh layer, and a second metal via for connecting the second metal portion to the device layer.24. The device according to claim 23 , wherein the third waveguide comprises an arrayed waveguide grating (AWG).25. The device according to claim 24 , wherein the AWG is more than 4 micrometers from the device layer.26. The device according to ...

Semiconductor device and method of manufacturing the same

A provided semiconductor device includes a Ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a p-type silicon layer, and a first insulating film from the top surface of the germanium growth protective film without reaching the major surface of a semiconductor substrate. An i-type germanium layer and an n-type germanium layer are embedded in the groove with a seed layer interposed between the layers and the groove, the seed layer being made of amorphous silicon, polysilicon, or silicon germanium. The i-type germanium layer and the n-type germanium layer do not protrude from the top surface of the germanium growth protective film, thereby forming a flat second insulating film having a substantially even thickness on the n-type germanium layer and the germanium growth protective film.

GUIDE TRANSITION DEVICE AND METHOD

A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane. 118-. (canceled)19. A method of fabricating a guide transition device comprising the steps of:providing a platform including a semiconductor waveguide defining a light input port for receiving a light beam, the semiconductor laser being positioned on a first plane;forming one end of the semiconductor waveguide into an angled surface;depositing a polymer planarizing layer on the platform in abutting engagement with the angled surface to provide a first angular deflection surface;depositing a lower polymer cladding layer on the polymer planarizing layer, depositing a polymer core on the lower polymer cladding layer, and depositing an upper polymer cladding layer on the core and lower polymer cladding layer, the lower polymer cladding layer, the polymer core, and the upper polymer cladding layer forming a polymer waveguide on a second plane different than the first plane with a first end defining a light output port; andremoving portions of the lower polymer cladding layer, the core, and the upper polymer cladding layer to form a second angular deflection surface at an end of the polymer waveguide opposite the first end, the first angular deflection surface and the second angular deflection surface having compatible angles so that a light beam directed into the light input port defined by the semiconductor waveguide on the first plane is deflected into the core ...

Laser sparing for photonic chips

A method comprises receiving, at a plurality of optical distributors of a photonic chip, optical energy from a plurality of primary laser sources. Each of the optical distributors receives optical energy from a respective primary laser source at a respective first input. The method further comprises detecting a failed primary laser source of the primary laser sources using control circuitry of a sparing system. The sparing system further comprises one or more secondary laser sources configured to provide optical energy to respective second inputs of the optical distributors. A first one of the secondary laser sources is optically coupled with at least two of the optical distributors. The method further comprises controlling, using the control circuitry, a first one of the secondary laser sources to selectively provide optical energy to the optical distributor whose first input is optically coupled with the failed primary laser source.

PHOTONIC INTEGRATION PLATFORM

A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer. 1. An optical device , comprising:a first waveguide disposed on a first layer; anda plurality of prongs disposed on a plurality of layers that excludes the first layer, wherein the plurality of prongs is configured to at least one of receive or transmit optical energy via a coupling surface of the optical device, wherein the plurality of prongs and the first waveguide are positioned such that the optical energy is transferred therebetween, wherein each of the plurality of prongs is surrounded by an insulative material,wherein a dimension of the first waveguide changes as the first waveguide extends away from the coupling surface,wherein a length of the first waveguide in a direction that extends away from the coupling surface is greater than each of respective lengths of the plurality of prongs.2. The optical device of claim 1 , further comprising:a semiconductor substrate;an insulation layer disposed above the semiconductor substrate; anda crystalline silicon layer disposed above the insulation layer, wherein the first waveguide and the plurality of prongs are disposed at least one of in or above the crystalline silicon layer.3. The optical device of claim 2 , wherein the first waveguide and the plurality of prongs are disposed above the crystalline silicon layer claim 2 , and wherein the crystalline silicon layer comprises a silicon ...

EDGE COUPLER

A composite optical waveguide is constructed using an array of waveguide cores, in which one core is tapered to a larger dimension, so that all the cores are used as a composite input port, and the one larger core is used as an output port. In addition, transverse couplers can be fabricated in a similar fashion. The waveguide cores are preferably made of SiN. In some cases, a layer of SiN which is provided as an etch stop is used as at least one of the waveguide cores. The waveguide cores can be spaced away from a semiconductor layer so as to minimize loses. 137-. (canceled)38. A photonic integrated circuit (PIC) comprising:a substrate;an optical device layer supported over the substrate;a coupler capable of coupling light vertically away from the optical device layer, thereby reducing loss due to substrate coupling; the coupler comprising a plurality of waveguide cores vertically offset from the optical device layer and each other, each waveguide core comprising a propagation axis for propagating light in a propagation direction parallel to each other, and capable of coupling light sequentially and evanescently between adjacent vertically offset waveguide cores.39. The PIC according to claim 38 , wherein the coupler includes:a first waveguide core including a first end and a narrower second end;a second waveguide core including a first end, substantially a same width as the first end of the first waveguide, and a wider second end.40. The PIC according to claim 39 , wherein the first waveguide core is longer than the second waveguide core.41. The PIC according to claim 39 , wherein the coupler includes:a third waveguide core laterally offset from the first waveguide core.42. The PIC according to claim 41 , wherein the third waveguide core including a first end and a narrower second end.43. The PIC according to claim 41 , wherein the coupler includes:a fourth waveguide core laterally offset from the second waveguide core.44. The PIC according to claim 43 , wherein ...

Input waveguide arrangement in a photonic chip

A photonic chip includes a device layer and a port layer, with an optical port located at the port layer. Inter-layer optical couplers are provided for coupling light between the device and port layers. The inter-layer couplers may be configured to couple signal light but block pump light or other undesired wavelength from entering the device layer, operating as an input filter. The port layer may accommodate other light pre-processing functions, such as optical power splitting, that are undesirable in the device layer. 120-. (canceled)21. A photonics chip comprising:{'sub': '1', 'an input port for receiving light comprising a first wavelength λ;'}a first port waveguide optically coupled to the input port, the first port waveguide comprising a first optical material; and,a first device waveguide comprising a second optical material different from the first optical material;{'sub': '1', 'wherein the first device waveguide is optically coupled to the first port waveguide at the first wavelength λ.'}22. The photonics chip of wherein the first optical material is a semiconductor claim 21 , and the second optical material is a dielectric.23. The photonics chip of configured for connecting optically to an external optical system including a source of a second wavelength λ claim 22 , wherein the first device waveguide is optically de-coupled from the first port waveguide at the second wavelength λ.24. The photonics chip of wherein the first device waveguide is transparent at the first wavelength λand is absorptive at the second wavelength λ claim 23 , and the first port waveguide is transparent at the first and second wavelengths λand λ.25. The photonics chip of comprising an in-plane wavelength-selective coupler configured to couple the first wavelength from the first port waveguide into the first device waveguide and to block the second wavelength from coupling into the first device waveguide.26. The photonics chip of comprising a device layer and a port layer disposed ...

THREE DIMENSIONAL DISPLAY APPARATUS

An apparatus for a three-dimensional display is disclosed that includes a waveguide having a pair of opposed faces configured to propagate radiation along a length of the waveguide between the faces, a radiation source optically coupled to the waveguide and configured to transmit the radiation to the waveguide, at least one prismatic element having a face optically coupled to at least one of the faces of the waveguide, and a layer of image modulating material optically coupled to at least one of the faces of the waveguide. The image modulating material may be optically coupled to an area of at least one of the faces of the waveguide, at least a portion of the area being located outside a perimeter of a face of the prismatic element optically coupled to at least one of the faces of the waveguide. The image modulating material may also be optically coupled to at least one of the faces of the waveguide, such that the waveguide is between the layer of image modulating material and the at least one prismatic element. 1. An apparatus for a three-dimensional display comprising:a waveguide having a pair of opposed faces configured to propagate radiation along a length of the waveguide between the faces;a radiation source optically coupled to the waveguide and configured to transmit the radiation to the waveguide;at least one prismatic element having a face optically coupled to at least one of the faces of the waveguide, the face of the prismatic element having a perimeter; anda layer of image modulating material optically coupled to an area of at least one of the faces of the waveguide, at least a portion of the area being located outside the perimeter of the face of the prismatic element.2. The three-dimensional display apparatus of claim 1 , wherein the entire area of the at least one face of the waveguide optically coupled to the layer of image modulating material is outside and adjacent to the perimeter of the face of the prismatic element.3. The three-dimensional ...

BACK END OF LINE PROCESS INTEGRATED OPTICAL DEVICE FABRICATION

An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer. 120-. (canceled)21. A method of integrated optical device fabrication forming an optical device within a vertical span of a metal stack of an integrated semiconductor chip as part of a back end of line fabrication process , comprising:providing a substrate;providing a device layer including at least one optical device on the substrate;depositing a first oxide layer over the semiconductor devices;forming a first metal via through the first oxide layer into contact with the device layer;depositing a second oxide layer comprising an oxide material over the first oxide layer;etching a first portion of the second oxide layer;depositing metal in the first portion of the second oxide layer for connection with the first metal via and external contacts;forming a second portion of the second oxide layer into a first waveguide for coupling light to or from the at least one optical device.22. The method according to claim 21 , further comprising:depositing a third oxide layer over the second oxide layer;forming a second metal via through the third oxide layer into contact with the device layer;depositing a fourth oxide layer of the third oxide layer;etching a first portion of the fourth oxide layer;depositing metal in the first portion of the fourth oxide layer for connection with the second metal via and external contacts; andforming a second portion of the fourth oxide layer into a second waveguide for coupling light to or from the at least one optical device via the first waveguide.23. The method according to claim 21 , wherein forming a second portion of the second oxide layer comprises doping the oxide material to form a doped first waveguide.24. The method according to claim 23 , wherein doping the oxide material comprises ...

Micro-Truss Structures Having In-Plane Structural Members

An enhanced self-writing method for generating in-plane (horizontally-oriented) polymer lightguides that includes disposing one or more light deflecting structures in or on the upper surface of a uncured layer that deflect incident collimated light beams in a transverse direction (i.e., parallel to the uncured layer top layer surface), whereby the deflected collimated light beam polymerizes a corresponding elongated portion of the uncured material in a self-propagating manner to form in-plane polymer lightguides. When used in the fabrication of micro-truss structures, the in-plane polymer lightguides are linked to diagonal polymer lightguides to form superior truss configurations, such as that of the ideal octet-truss structure. Non-polymerized portions of the uncured layer are removed to expose the micro-truss structure for further processing. 1. A method for forming a micro-truss structure , the method comprising:forming an uncured layer on a support surface such that the uncured layer includes at least one light deflecting structures disposed between an upper surface of the uncured layer and the support surface; polymerizes a first elongated portion of the uncured layer to form a first self-propagating polymer lightguide section extending between the upper surface of the uncured layer and an associated light deflecting structure of said plurality of light deflecting structures, and', 'deflects from said associated light deflecting structure such that said deflected collimated light beam polymerizes a second elongated portion of the uncured layer to form a second self-propagating polymer lightguide section extending from said associated light deflecting structure into said uncured layer., 'directing collimated light beams through the upper surface of the uncured layer at parallel first incident angles such that each collimated light beam2. The method of claim 1 ,wherein directing said collimated light beams comprises directing said collimated light beams ...

OPTICAL INTERCONNECTS AND METHODS OF FABRICATING SAME

An embodiment provides an optical interconnect comprising first and second planar metallization layers, a glass substrate disposed between at least portions of the first and second metallization layers, an aperture in the second metallization layer having a first and second ends, and a polymer waveguide having a first end adjacent the first end of the aperture. The first end of the waveguide can have a first edge defining a first acute angle with respect to a top surface of the waveguide. The first end of the optical waveguide can be configured to receive an optical signal traversing through the glass substrate from a source proximate a first position on a top surface of the glass substrate and direct the optical signal with the first edge in a direction parallel to the glass substrate towards a second end of the waveguide. 1. A method of fabricating an optical interconnect , comprising: a planar glass substrate;', 'a planar first metallization layer adjacent to a top side of the glass substrate;', 'a planar second metallization layer adjacent to a bottom side of the glass substrate;', 'a planar first photoresist layer adjacent to a top side of the first metallization layer opposite the glass substrate; and', 'a planar second photoresist layer adjacent to a bottom side of the second metallization layer opposite the glass substrate;, 'providing a interconnect structure comprisingusing the first photoresist layer to etch a portion of the first metallization layer to form a first aperture in the first metallization layer;using the second photoresist layer to etch a portion of the second metallization layer offset from the portion of the first metallization layer to form a second aperture in the second metallization layer;removing the first and second photoresist layers;depositing a planar photo-definable material layer comprising a negative tone material adjacent to a bottom side of the second metallization layer opposite the glass substrate;immersing at least a bottom ...

Thin Layer Photonic Integrated Circuit Based Optical Signal Manipulators

Integrated optical intensity or phase modulators capable of very low modulation voltage, broad modulation bandwidth, low optical power loss for device insertion, and very small device size are of interest. Such modulators can be of electro-optic or electro-absorption type made of an appropriate electro-optic or electro-absorption material in particular or referred to as an active material in general. An efficient optical waveguide structure for achieving high overlapping between the optical beam mode and the active electro-active region leads to reduced modulation voltage. In an embodiment, ultra-low modulation voltage, high-frequency response, and very compact device size are enabled by a semiconductor modulator device structure, together with an active semiconductor material that is an electro-optic or electro-absorption material, that are appropriately doped with carriers to substantially lower the modulator voltage and still maintain the high frequency response. In another embodiment, an efficient optical coupling structure further enables low optical loss. Various embodiments combined enable the modulator to reach lower voltage, higher frequency, low optical loss, and more compact size than previously possible in the prior arts. 1. A lowloss-low-voltage-high-frequency optical phase or intensity modulator device deposed on a substrate , comprising:{'sub': 'op', 'an input connecting waveguide core deposed on the substrate connecting an energy of an optical beam to and from an electro-active layer, the optical beam having one or more optical wavelengths around an operating optical wavelength λ;'}the input connecting waveguide core becomes an input tapering waveguide core and enters below an electro-active layer, wherein the optical beam energy is well-confined in the input tapering waveguide core before the tapering waveguide core enters below the electro-active layer, and the optical beam energy is no longer well-confined in the input tapering waveguide core at ...

Semiconductor Device and Method of Manufacturing

A semiconductor device includes a first chip, a dielectric layer over the first chip, and a second chip over the dielectric layer. A conductive layer is embedded in the dielectric layer and is electrically coupled to the first chip and the second chip. The second chip includes an optical component. The first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer. 1. A method comprising:encapsulating a first chip in an encapsulant;forming a redistribution layer over the encapsulant and the first chip, the redistribution layer being electrically coupling to the first chip;forming a waveguide over the encapsulant;forming a conductive feature over and electrically coupling to a portion of the redistribution layer; andbonding a second chip to the conductive feature, wherein the second chip comprises an optical component in optical alignment with the waveguide.2. The method of further comprising:forming a first dielectric layer over the encapsulant and the first chip; andpatterning the first dielectric layer to form a first opening, wherein a first portion of the redistribution layer extends into the first opening to electrically couple to the first chip.3. The method of further comprising forming a second opening in the first dielectric layer to expose the encapsulant claim 2 , wherein the waveguide is formed in the second opening.4. The method of claim 3 , wherein a second portion of the redistribution layer extends into the second opening claim 3 , and the second chip is optically coupled to the waveguide through the second portion of the redistribution layer.5. The method of further comprising forming a second dielectric layer claim 3 , wherein a portion of the second dielectric layer fills the second opening.6. The method of claim 1 , further comprising:before the encapsulating the first chip, attaching the first chip to a first carrier;attaching a second carrier to the encapsulant on a side ...

SURFACE-NORMAL OPTICAL COUPLING INTERFACE WITH THERMAL-OPTIC COEFFICIENT COMPENSATION

The disclosed embodiments provide a system that implements an optical interface. The system includes a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer (which can be comprised of SiON) disposed over the silicon layer, wherein the interface layer includes an interface waveguide. The system also includes an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip. The system additionally includes a mirror, which is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits the top surface of the semiconductor chip. 1. An interface , comprising:a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer comprised of an interface material disposed over the silicon layer, wherein the interface layer includes an interface waveguide;an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip; anda mirror, which is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits a surface normal coupler on the top surface of the semiconductor chip, wherein the mirror comprises a reflectively coated etched surface of a sacrificial silicon layer, wherein the sacrificial silicon layer is disposed over the silicon layer at a same level as the interface layer.2. The interface of claim 1 , further comprising an optical gain chip bonded to the top surface of the semiconductor chip claim 1 , wherein the optical gain chip is ...

An Integrated Circuit Optical Interconnect

An integrated circuit optical interconnect for connecting a first circuit part arranged to output an optical signal and a second circuit part arranged to receive an optical signal. The integrated circuit optical interconnect comprises a body comprising a glass material. The glass material has embedded therein an optical waveguide arrangement having an input, located at a surface of the body, for coupling to the first circuit part, and an output, located at a surface of the body, for coupling to the second circuit part. The optical waveguide arrangement comprises at least two optical waveguide segments extending in different directions through the glass material and at least one reflecting part arranged between the two optical waveguide segments, for directing an optical signal from one of the optical waveguide segments to the other of the optical waveguide segments. The optical waveguide arrangement is arranged to optically couple the input and the output, whereby an optical signal can pass from the input to the output through the optical waveguide arrangement. There is also provided an integrated circuit module comprising the integrated circuit optical interconnect, and a telecommunications switch comprising the integrated circuit module. There is further provided a method for manufacturing an integrated circuit optical interconnect. 116-. (canceled)17. An integrated circuit optical interconnect for connecting a first circuit part arranged to output an optical signal and a second circuit part arranged to receive an optical signal , the integrated circuit optical interconnect comprising:a body comprising a glass material;wherein the glass material has embedded therein an optical waveguide arrangement having an input, located at a surface of the body, for coupling to the first circuit part, and an output, located at a surface of the body, for coupling to the second circuit part;wherein the optical waveguide arrangement comprises: two optical waveguide segments ...

Multilayer Optical Devices and Systems

One example system comprises a plurality of substrates disposed in an overlapping arrangement. The plurality of substrates includes at least a first substrate and a second substrate. The system also comprises a first waveguide disposed on the first substrate to define a first optical path on the first substrate. The first waveguide is configured to guide light along the first optical path and to transmit, at an output section of the first waveguide, the light out of the first waveguide toward the second substrate. The system also comprises a second waveguide disposed on the second substrate to define a second optical path on the second substrate. An input section of the second waveguide is aligned with the output section of the first waveguide to receive the light transmitted by the first waveguide. The second waveguide is configured to guide the light along the second optical path. 1. A light detection and ranging (LIDAR) device comprising:a plurality of substrates disposed in an overlapping arrangement, the plurality of substrates including at least a first substrate and a second substrate;a light emitter configured to emit a light signal;a first waveguide disposed on the first substrate to define a first optical path on the first substrate, wherein the first waveguide is configured to guide the light signal along the first optical path and to transmit, at an output section of the first waveguide, the light signal out of the first waveguide toward the second substrate; anda second waveguide disposed on the second substrate to define a second optical path on the second substrate, wherein an input section of the second waveguide overlaps the output section of the first waveguide, and wherein the second waveguide is configured to receive the light signal from the first waveguide at the input section and to guide the light signal along the second optical path.2. The LIDAR device of claim 1 , wherein adjacent substrates in the overlapping arrangement are spaced apart ...

ARRAYS OF INTEGRATED ANALYTICAL DEVICES AND METHODS FOR PRODUCTION

Arrays of integrated analytical devices and their methods for production are provided. The arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The integrated devices allow the highly sensitive discrimination of optical signals using features such as spectra, amplitude, and time resolution, or combinations thereof. The arrays and methods of the invention make use of silicon chip fabrication and manufacturing techniques developed for the electronics industry and highly suited for miniaturization and high throughput. 151-. (canceled)52. A method of nucleic acid sequencing comprising the steps of:providing an array of integrated analytical devices, each device comprising a nucleic acid template/polymerase primer complex immobilized within an optically confined region, a plurality of fluorescently labeled nucleotides in fluid contact with the nucleic acid template/polymerase primer complex, and a single detector element optically coupled to the optically confined region, wherein at least two fluorescently labeled nucleotides of the plurality of fluorescently labeled nucleotides emit fluorescence of different intensities at an emission wavelength;illuminating the optically confined region with an excitation wavelength;measuring a fluorescent signal from the optically confined region at the single detector element; andidentifying a least one of the at least two fluorescently labeled nucleotides by an intensity of the measured fluorescent signal at the emission wavelength.53. The method of claims 52 , wherein the array of integrated analytical devices comprises:a substrate layer, wherein the substrate layer is a detector layer;a waveguide module layer disposed above the substrate layer, wherein the waveguide module layer comprises a lower waveguide cladding material, a waveguide core material, and an upper waveguide cladding material; anda ...

WAVEGUIDE CROSSINGS HAVING ARMS SHAPED WITH A NON-LINEAR CURVATURE

Structures for a waveguide crossing and methods of fabricating a structure for a waveguide crossing. A waveguide crossing includes a central section and an arm positioned between a waveguide core and the central section. The arm and the waveguide core are aligned along a longitudinal axis. The arm is coupled to the waveguide core at a first interface, and the arm is coupled to a portion of the central section at a second interface. The arm has a first width at the first interface, a second width at the second interface, and a third width between the first interface and the second interface. The third width is greater than either the first width or the second width. 1. A structure comprising:a first waveguide core; anda first waveguide crossing including a central section and a first arm positioned between the first waveguide core and the central section, the first arm and the first waveguide core aligned along a first longitudinal axis, the first arm coupled to the first waveguide core at a first interface, and the first arm coupled to a first portion of the central section at a second interface,wherein the first arm has a first width at the first interface, a second width at the second interface, and a third width between the first interface and the second interface, the third width is greater than the first width, and the third width is greater than the second width.2. The structure of wherein the first width is less than the second width.3. The structure of wherein the first arm has a side surface with a curvature defined by a cosine function.4. The structure of wherein the first arm includes a first section and a second section claim 3 , the first section has a first length that is dependent on a first ratio of the first width to the third width claim 3 , and the second section has a second length that is dependent on a second ratio of the second width to the third width.5. The structure of wherein the first width and the second width are unequal claim 1 , and ...

ELECTRICAL AND OPTICAL THROUGH-SILICON-VIA (TSV)

A through-silicon-via structure formed within a semiconductor device is provided. The TSV structure may include a trench located within a substrate of the semiconductor device, an insulator layer located on at least one side wall of the trench, an electrically conductive layer located on the insulator layer, a first dielectric layer located on the electrically conductive layer, and a second dielectric layer located on the first dielectric layer and filling the trench. The second dielectric layer includes a higher refractive index relative to the first dielectric layer, such that the first and the second dielectric layer create an optical waveguide. The electrically conductive layer provides electrical coupling between the semiconductor device and another semiconductor device, while the optical waveguide provides optical coupling between the semiconductor device and the another semiconductor device, whereby the another semiconductor device has another substrate that is separate from the substrate of the semiconductor device. 1. A through-silicon-via (TSV) structure formed within a semiconductor device , the TSV structure comprising:a trench located within a substrate region of the semiconductor device;an insulator layer located on at least one side wall of the trench;an electrically conductive layer located on the insulator layer;a first dielectric layer located on the electrically conductive layer; anda second dielectric layer located on the first dielectric layer and filling the trench, the second dielectric layer having a higher refractive index relative to the first dielectric layer, the first and the second dielectric layer creating an optical waveguide structure, and the electrically conductive layer creating an electrical waveguide structure.2. The structure of claim 1 , wherein the electrically conductive layer includes an outer core of the TSV that carries an electrical signal claim 1 , and wherein the first and the second dielectric layer include an inner ...

OPTO-ELECTRIC HYBRID MODULE

An opto-electric hybrid module is provided, which is configured so that no air bubbles are present in a sealing resin which seals a space defined between an optical waveguide and an optical element. In the opto-electric hybrid module, an electric circuit is provided directly on an over-cladding layer of the optical waveguide, and the optical element is provided on predetermined portions (mounting pads) of the electric circuit. The over-cladding layer has a projection which covers a core, and a center portion of the optical element is positioned above the projection with the intervention of a sealing resin. 1an optical waveguide;an electric circuit provided directly on the optical waveguide;an optical element mounted on the electric circuit; anda sealing resin which seals a space defined between the optical element and the optical waveguide;wherein the optical waveguide includes an under-cladding layer, a linear light-path core provided on a surface of the under-cladding layer as projecting from the surface of the under-cladding layer, and an over-cladding layer having a portion which covers side surfaces and a top surface of the projecting core;wherein the optical waveguide has a projecting portion; andwherein the optical element is positioned above a portion of the over-cladding layer which covers the top surface of the core, and is spaced a predetermined distance from the portion of the over-cladding layer.. An opto-electric hybrid module comprising: The present invention relates to an opto-electric hybrid module which includes an optical waveguide, an electric circuit provided directly on the optical waveguide, an optical element mounted on the electric circuit and a sealing resin which seals a space defined between the optical waveguide and the optical element.Opto-electric hybrid modules are typically produced by: individually producing an electric circuit unit including an electric circuit provided on a surface of a substrate, and an optical waveguide ...

OPTICAL MODULES

Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench. 1. An optical module comprising:an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth;a lens in the first trench of the optical bench;at least one semiconductor chip in the second trench of the optical bench;a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches; anda metal package component surrounding the optical bench having the lens and the semiconductor chip and the flexible printed circuit board to protect them from an external environment,wherein the optical bench is a metal optical bench or a silicon optical bench,wherein a ceramic feed-through is provided in the metal package component;the ceramic feed-through is electrically connected to an external flexible printed circuit board outside the metal package component; andthe flexible printed circuit board is electrically connected to the ceramic feed-through inside the metal package component.2. The optical module of claim 1 , whereinthe flexible printed circuit board is electrically connected to the ceramic feed-through through a ribbon wire or a bonding wire; andthe external flexible printed circuit board is electrically connected to the ceramic feed-through through soldering.3. The optical module of claim 1 , wherein the metal package component comprises a receptacle for connecting to an external ferrule claim 1 , with a window adjacent to the lens.4. The ...

Grating and lens system for coupling light

An optical coupling device can couple incident light, propagating orthogonal to a layered structure, into a layer of the layered structure. The device can include a lens having a lens central axis. The lens can focus a first beam to form a converging second beam. The first beam can have a first beam central axis that is offset from the lens central axis. The second beam can have a second beam central axis that is angled with respect to the first beam central axis. A planar grating can redirect the second beam to form a converging third beam. The third beam can have a third beam central axis that is parallel to a plane of the grating. Offsetting the first beam central axis from the lens central axis in this manner can help relax wavelength, manufacturing, and/or alignment tolerances, compared to a configuration in which there is no offset.

SILICON LIGHT TRAP DEVICES, SYSTEMS AND METHODS

Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art. 125-. (canceled)26. A method of forming a silicon-on-nothing structure , comprising:providing a silicon structure;etching a trench in the silicon structure;exposing the silicon structure to a hydrogen atmosphere; andperforming reflow or epitaxy,wherein a light trap element is formed from the trench.27. The method of claim 26 , wherein the etching comprises:etching a plurality of trenches in the silicon structure,wherein a light trap structure is comprised of respective light trap elements formed from the plurality of trenches.28. The method of claim 27 , further comprising:forming a photo-detector between the light trap structure and the surface of the silicon-on-nothing structure.29. The method of claim 28 , wherein the silicon-on-nothing structure is a photo-sensitive structure.30. The method of claim 29 , wherein the photo-sensitive structure is a photodiode.31. The method of claim 29 , wherein the photo-sensitive structure is a solar cell.32. The method of claim 29 , wherein the photo-sensitive structure forms only a portion of the surface of the silicon-on-nothing structure.33. The method of claim 29 , wherein the photo-sensitive structure forms an entire surface of the silicon-on-nothing structure.34. The method of claim 29 , wherein the photo-sensitive structure comprises a plurality of photo-sensitive structures spaced apart from one another.35. The method of claim 34 , wherein all of the plurality of photo-sensitive structures are formed at the surface of the silicon-on-nothing structure.36. The method of claim 34 , wherein only some of the ...

APPARATUSES AND METHODS FOR PHOTONIC COMMUNICATION AND PHOTONIC ADDRESSING

Apparatuses and methods for photonic communication and photonic addressing are disclosed herein. An example apparatus includes a plurality of photonic sources, a plurality of memory die, a logic die. Each of the plurality of photonic sources provides a photonic signal of a different wavelength and are provided to a first photonic path. Each memory die of the plurality of memory die includes a photonic modulation circuit coupled to the first photonic path, and further includes a photonic detector circuit coupled to a second photonic path. Each memory die of the plurality of memory die is associated with and addressed by a respective wavelength of a photonic signal. The logic die is coupled to the first and second photonic paths, and includes a plurality of photonic circuits. Each of the photonic circuits of the plurality of photonic circuits is associated with a respective wavelength of a photonic signal. 1. An apparatus , comprising:first and second photonic paths;a first layer at least coupled to the first photonic path, the first layer configured to provide a plurality of photonic signals to the first photonic path, wherein each of the plurality of photonic signals has a different wavelength; and a first photonic modulator circuit coupled to the first photonic path, wherein the first photonic filter is configured to receive the plurality of photonic signals from the first photonic path, filter a photonic signal of a respective wavelength from the plurality of photonic signals and provide the plurality of photonic signals including the filtered photonic signal of the respective wavelength to the first photonic path; and', 'a second photonic filter coupled to the second photonic path, wherein the second photonic filter is configured to receive the plurality of photonic signals from the second photonic path, filter a photonic signal of a respective wavelength from the plurality of photonic signals and provide the remaining plurality of photonic signals to the second ...

Contact image sensor using switchable bragg gratings

A contact image sensor comprises: a light source providing a collimated beam; a detector and a switchable grating array comprising first and second transparent substrates sandwiching an array of switchable grating elements with transparent electrodes applied to said substrates, said substrates together providing a total internal reflection light guide. A first transmission grating layer overlays said first substrate. A second transmission grating layer overlays said second substrate. A quarter wavelength retarder layer overlays said second transmission grating layer. A platen overlays said quarter wavelength retarder layer; a polarization-rotating reflecting layer overlaying said first transmission grating layer. An input coupler for directing light from said light source into said light guide and an output coupler for extracting light out of said light guide towards said detector are also provided.

INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI SOI

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device. 1. An optoelectronic device , comprising:an integrated circuit including electronic devices formed on a front side of a semiconductor substrate;a barrier layer formed on a back side of the semiconductor substrate; anda photonics layer formed on the barrier layer, the photonics layer including a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core, the core configured to couple light generated from at least one component of the optoelectronic device, wherein the cladding layer is formed on the barrier layer and the core is offset from the barrier layer within the cladding layer and the cladding layer includes a thickness of greater than a wavelength of the light to be coupled in the core.2. The device as recited in claim 1 , wherein the photonics layer is sandwiched between the integrated circuit and at least one other electronic device and includes a through via to connect the integrated circuit to the at least one other electronic device.3. The device as recited in claim 1 , wherein the front side of the integrated circuit is free to enable connection to a board or carrier.4. The device as recited in claim 1 , wherein the at least one electronic device includes a photodiode or laser bonded to the front side of the integrated circuit to couple light through the barrier layer and into the core.5. An optoelectronic device claim 1 , comprising:an integrated circuit including ...

INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI SOI

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device. 1. An optoelectronic device , comprising:an integrated circuit including electronic devices formed on a front side of a semiconductor substrate;a barrier layer formed on a back side of the semiconductor substrate;a photonics layer formed on the barrier layer, the photonics layer including a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core, the core configured to couple light generated from at least one component of the optoelectronic device; anda photodiode or laser bonded to the barrier layer and formed within the cladding layer to couple light into the core.2. The device as recited in claim 1 , wherein the photonics layer is sandwiched between the integrated circuit and at least one other electronic device and includes a through via to connect the integrated circuit to the at least one other electronic device.3. The device as recited in claim 1 , wherein the front side of the integrated circuit is free to enable connection to a board or carrier.4. An optoelectronic device claim 1 , comprising:an integrated circuit including electronic devices formed on a front side of a semiconductor substrate;a light emitting device connected to at least one of the electronic devices;a barrier layer formed on a back side of the semiconductor substrate; anda photonics layer formed on the barrier layer, the photonics layer including a core for transmission of light and a cladding ...

INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI SOI

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device. 1. An optoelectronic device , comprising:an integrated circuit including electronic devices formed on a front side of a semiconductor substrate;a barrier layer formed on a back side of the semiconductor substrate;a photonics layer formed on the barrier layer, the photonics layer including a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core, the core configured to couple light generated from at least one component of the optoelectronic device; anda photodiode or laser bonded to the barrier layer and formed within the cladding layer to couple light into the core via evanescent light coupling.2. The device as recited in claim 1 , wherein the photonics layer is sandwiched between the integrated circuit and at least one other electronic device and includes a through via to connect the integrated circuit to the at least one other electronic device.3. The device as recited in claim 1 , wherein the front side of the integrated circuit is free to enable connection to a board or carrier.4. An optoelectronic device claim 1 , comprising:an integrated circuit including electronic devices formed on a front side of a semiconductor substrate;a light emitting device connected to at least one of the electronic devices;a barrier layer formed on a back side of the semiconductor substrate; anda photonics layer formed on the barrier layer, the photonics layer including a core for ...

DIRECT BANDGAP SEMICONDUCTOR BONDED TO SILICON PHOTONICS

According to an example of the present disclosure a direct bandgap (DBG) semiconductor structure is bonded to an assembly comprising a silicon photonics (SiP) wafer and a complementary metal-oxide-semiconductor (CMOS) wafer. The SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry. The direct bandgap (DBG) semiconductor structure is optically coupled to the photonics circuitry 1. A method comprising:receiving an assembly comprising a silicon photonics (SiP) wafer bonded to a complementary metal-oxide-semiconductor (CMOS) wafer, wherein the SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry; andafter receiving the assembly:bonding a direct bandgap (DBG) semiconductor structure to the SiP wafer;optically coupling the direct bandgap (DBG) semiconductor structure to the photonics circuitry; andelectrically connecting the DBG semiconductor structure to the electronic circuitry of the CMOS wafer.2. The method of wherein the SiP wafer comprises a photonics layer including the photonics circuitry and an electrical interconnect layer including an electrically conductive line embedded in electrically insulating material; the electrically conductive line connecting the electronic circuitry of the CMOS wafer with the photonics circuitry in the photonics layer.3. The method of wherein electrically connecting the DBG semiconductor structure to the electronic circuitry of the CMOS wafer includes connecting an electrical contact of the DBG semiconductor structure with a via which extends at least partially through the SiP wafer.4. The method of wherein the DBG semiconductor structure includes an active layer and at least one cladding layer.5. The method of comprising processing the DBG semiconductor structure to form a laser claim 1 , a photodiode claim 1 , an optical modulator claim 1 , an optical amplifier or another type of active photonics device.6. The method of wherein the processing includes etching the ...