Multilevel template assisted wafer bonding

Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure.

INTEGRATED OPTICAL NETWORK UNIT

An optical network unit includes a transmit/receive port and a silicon waveguide optically coupled to the transmit/receive port. The optical network unit also includes a tunable filter coupled to the silicon waveguide and providing a first output for a first frequency band and a second output for a second frequency band. The optical network unit further includes a polarization diverse receiver coupled to the tunable filter and a laser coupled to the tunable filter. 1. An optical network unit comprising:a transmit/receive port, wherein the transmit/receive port is configured to be coupled to an optical fiber;a silicon waveguide optically coupled to the transmit/receive port, wherein the silicon waveguide is not the same as the optical fiber;a tunable filter coupled to the silicon waveguide and providing a first output for a first frequency band and a second output for a second frequency band; a polarization splitter coupled to the first output and providing a first polarization output and a second polarization output;', 'a first band pass filter coupled to the first polarization output;', 'a polarization rotator coupled to the second polarization output;', 'a second band pass filter coupled to the polarization rotator; and', 'a detector coupled to the first band pass filter and the second band pass filter; and, 'a polarization diverse receiver coupled to the tunable filter, wherein the polarization diverse receiver includesa laser coupled to the tunable filter.2. The optical network unit of claim 1 , wherein:the first band pass filter is for the L band; andthe second band pass filter is for the L band.3. The optical network unit of wherein the detector comprises a material coupled to a silicon structure.4. The optical network unit of wherein the detector comprises a germanium material coupled to a silicon structure.5. The optical network unit of wherein the laser comprises a tunable laser.6. The optical network unit of further comprising an optical modulator disposed ...

Coplanar integration of a direct-bandgap chip into a silicon photonic device

A method for fabricating a composite device comprises providing a platform, providing a chip, and bonding the chip to the platform. The platform has a base layer and a device layer above the base layer. An opening in the device layer exposes a portion of the base layer. The chip is bonded to the portion of the base layer exposed by the opening in the device layer. A portion of the chip extends above the platform and is removed.

SYSTEMS AND METHODS FOR PHOTONIC POLARIZATION ROTATORS

An integrated non-reciprocal polarization rotator comprises a substrate, a Faraday crystal, a first waveguide, and a second waveguide. The substrate has a recess extending to a predetermined depth. The Faraday crystal is mounted in the recess and optically coupled with the first waveguide and the second waveguide. 1. A photonic device comprising:a substrate having a support surface and a device surface opposing the support surface, thereby defining a substrate thickness, wherein the substrate includes a recessed portion extending to a predetermined depth;a Faraday crystal mounted in the recessed portion and having a first facet and a second facet opposing the first facet;a first waveguide integrated on the substrate and optically coupled with the first facet of the Faraday crystal; anda second waveguide integrated on the substrate and optically coupled with the second facet of the Faraday crystal.2. The photonic device of further comprising:a first index matching region disposed between the first waveguide and the first facet of the Faraday crystal; anda second index matching region disposed between the second waveguide and the second facet of the Faraday crystal.3. The photonic device of wherein the Faraday crystal is permanently polled.4. The photonic device of wherein the Faraday crystal comprises at least one of bismuth europium holmium gallium iron garnet or bismuth yttrium iron garnet.5. The photonic device of wherein the Faraday crystal comprises yttrium iron garnet or bismuth-doped iron garnet.6. The photonic device of further comprising a magnet.7. The photonic device of wherein the substrate comprises silicon.8. The photonic device of further comprising an insulating layer disposed between the substrate and the first waveguide; and between the substrate and the second waveguide.9. The photonic device of further comprising an amorphous silicon layer disposed between the insulating layer and the Faraday crystal.10. The photonic device of claim 1 , wherein: ...

Systems and methods for photonic polarization rotators

A waveguide polarization rotator includes a substrate having a surface and a waveguide coupled to the surface of the substrate and operable to support a light beam along a direction of beam propagation. The waveguide includes a slab having a support surface and a second surface opposing the support surface and a rib protruding from the second surface of the slab in a direction substantially normal to the surface of the substrate and extending along the direction of beam propagation. The rib includes a first portion extending to a first height above the second surface of the slab and a second portion adjacent to the first portion and extending to a second height above the second surface of the slab. The second height is less than the first height.

Vertical integration of CMOS electronics with photonic devices

A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

INTEGRATED WAVEGUIDE COUPLER

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction. 1. (canceled)2. An integrated waveguide coupler comprising:a semiconductor waveguide configured to guide light in a direction of beam propagation; the opto-electronic device comprises a facet;', 'the facet has an orientation identified by a direction normal to the facet; and', 'the direction normal to the facet is not parallel with the direction of beam propagation of the semiconductor waveguide; and, 'an opto-electronic device, whereina connecting waveguide between the semiconductor waveguide and the facet of the opto-electronic device, wherein the direction of beam propagation is ascertained at an interface between the semiconductor waveguide and the connecting waveguide.3. The integrated waveguide coupler as recited in claim 2 , wherein the opto-electronic device comprises III-V material.4. The integrated waveguide coupler as recited in claim 2 , wherein the opto-electronic device is a gain medium for a laser.5. The integrated waveguide coupler as recited in claim 2 , wherein the connecting waveguide comprises a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.6. The integrated waveguide coupler as recited in claim 5 , wherein the second material is made from amorphous silicon.7. The integrated waveguide coupler as recited in claim 2 , wherein the semiconductor waveguide comprises crystalline silicon.8. The integrated waveguide coupler as recited in claim 2 , wherein the semiconductor waveguide and the opto-electronic device are disposed on a silicon substrate.9. The integrated waveguide ...

Structures for bonding a direct-bandgap chip to a silicon photonic device

A composite photonic device comprises a platform, a chip, and a contact layer. The platform comprises silicon. The chip is made of a III-V material. The contact layer has indentations to help control a flow of solder during bonding of the platform with the chip. In some embodiments, pedestals are placed under an optical path to prevent solder from flowing between the chip and the platform at the optical path.

Method and system for template assisted wafer bonding

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

Method and system for the monolithic integration of circuits for monitoring and control of RF signals

A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.

INTEGRATION OF AN UNPROCESSED, DIRECT-BANDGAP CHIP INTO A SILICON PHOTONIC DEVICE

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermetically seals the chip in the platform. 1. A composite device for splitting photonic functions across two or more materials , the composite device comprising: a base layer;', the device layer comprises a first material;', 'the first material is a semiconductor; and', 'the device layer comprises a plurality of walls forming an opening in the device layer;, 'a device layer, wherein], 'a platform, the platform comprising the chip comprises an active region; and', 'the active region comprises a second material;, 'a chip, wherein the chip is secured to the base layer of the platform in the opening of the device layer; and', 'the device layer of the platform is optically aligned with the active region of the chip; and, 'a bond securing the chip to the platform, whereina coating, wherein the coating hermetically seals the chip in the platform.2. The composite device as recited in claim 1 , wherein:the first material is silicon; andthe second material is a direct bandgap material.3. The composite device as recited in claim 2 , wherein the direct bandgap material comprises III-V material.4. The composite device as recited in claim 2 , wherein:a waveguide and mirrors are elements in the device layer;the waveguide and mirrors form a resonant cavity for a laser; andthe direct bandgap material provides a gain medium for the laser.5. The composite device as recited in claim 1 , wherein:a gap separates the chip and a ...

METHOD AND SYSTEM FOR THE MONOLITHIC INTEGRATION OF CIRCUITS FOR MONITORING AND CONTROL OF RF SIGNALS

A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power. 1. (canceled)2. A method for controlling quadrature bias in an optical communication system that utilizes the QPSK modulation format , the method comprising: an input light source,', 'first and second Mach-Zehnder modulators that receive light from the input light source, and apply respective first and second pseudorandom data streams, to generate respective first and second Mach-Zehnder modulator outputs,', 'a third Mach-Zehnder modulator formed by combining the first and second Mach-Zehnder modulator outputs and a phase bias, to generate a third Mach-Zehnder modulator output,', 'a splitter coupled with the third Mach-Zehnder modulator output, and', 'a photodiode coupled with the splitter, such that the splitter provides a portion of the third Mach-Zehnder modulator output to the photodiode, to generate a photodiode output;, 'providing a QPSK modulator that includesdetecting broadband power in the photodiode output that is correlated to phase error in relation to the quadrature bias in the third Mach-Zehnder modulator; andadjusting the phase bias to minimize the broadband power in the photodiode output, thus optimizing the quadrature bias.3. The method of claim 2 , wherein detecting the power in the photodiode output ...

HIGH-SPEED OPTICAL TRANSMITTER WITH A SILICON SUBSTRATE

A 400 Gb/s transmitter is integrated on a silicon substrate. The transmitter uses four gain chips, sixteen lasers, four modulators to modulate the sixteen lasers at 25 Gb/s, and four multiplexers to produce four optical outputs. Each optical output can transmit at 100 Gb/s to produce a 400 Gb/s transmitter. Other variations are also described. 1. An optical transmitter using semiconductor lasers and wavelength-division multiplexing (WDM) , the optical transmitter comprising:a substrate, wherein the substrate is silicon;four gain chips integrated on the substrate; the four gain chips and the plurality of reflectors form a plurality of lasers integrated on the substrate; and', 'the plurality of lasers are configured to transmit on predetermined optical channels of a WDM protocol;, 'a plurality of reflectors integrated on the substrate, whereinfour modulator chips integrated on the substrate, wherein the four modulator chips modulate light generated by the plurality of lasers;sixteen waveguides integrated on the substrate configured to guide light from the four modulator chips to four multiplexers; the four multiplexers are integrated on the substrate; and', 'each of the four multiplexers is configured to receive light from four waveguides of the sixteen waveguides and combine the light from the four waveguides into an optical output; and, 'the four multiplexers, wherein the four optical outputs are integrated on the substrate;', 'there is one optical output for each of the four multiplexers; and', 'each of the four optical outputs is configured to transmit light of four different frequencies to an optical fiber., 'four optical outputs, wherein2. The optical transmitter of claim 1 , wherein:there are four lasers per gain chip; andeach laser per gain chip operates on the same predetermined optical channel of the WDM protocol.3. The optical transmitter of claim 1 , wherein each gain chip claim 1 , of the four gain chips claim 1 , has a different bandgap.4. The optical ...

Tunable reflectors based on multi-cavity interference

A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structure further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors.

Hybrid optical modulator

An optical modulator includes an input port, a first waveguide region comprising silicon and optically coupled to the input port, and a waveguide splitter optically coupled to the first waveguide region and having a first output and a second output. The optical modulator also includes a first phase adjustment section optically coupled to the first output and comprising a first III-V diode and a second phase adjustment section optically coupled to the second output and comprising a second III-V diode. The optical modulator further includes a waveguide coupler optically coupled to the first phase adjustment section and the second phase adjustment section, a second waveguide region comprising silicon and optically coupled to the waveguide coupler, and an output port optically coupled to the second waveguide region.

Integrated optical network unit

An optical network unit includes a transmit/receive port and a silicon waveguide optically coupled to the transmit/receive port. The optical network unit also includes a tunable filter coupled to the silicon waveguide and providing a first output for a first frequency band and a second output for a second frequency band. The optical network unit further includes a polarization diverse receiver coupled to the tunable filter and a laser coupled to the tunable filter.

Method and system for widely tunable laser

A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.

METHOD AND SYSTEM FOR WIDELY TUNABLE LASER

A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output. 1. A widely tunable laser system comprising:a substrate; the first laser is integrated with the substrate;', 'the first laser comprises a gain medium that includes a first material; and', 'the first laser emits light at a wavelength that is tunable within a first wavelength range, wherein the first wavelength range is determined at least in part by the first material;, 'a first laser, wherein the second laser is integrated with the substrate;', 'the second laser comprises a gain medium that includes a second material; and', 'the second laser emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range, wherein the second wavelength range is determined at least in part by the second material;, 'a second laser, whereinan output; andan optical combining device configured to direct light from one or both of the first laser and the second laser to the output.2. The widely tunable laser system of claim 1 , wherein the substrate comprises silicon.3. The widely tunable laser system of claim 1 , further comprising a waveguide into which the light from at least one of the first laser and the second laser are ...

Processing of a direct-bandgap chip after bonding to a silicon photonic device

A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip is used as a gain medium and the platform is at least partially made of silicon.

METHOD AND SYSTEM FOR THE MONOLITHIC INTEGRATION OF CIRCUITS FOR MONITORING AND CONTROL OF RF SIGNALS

A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power. 1. (canceled)2. An apparatus for monitoring and controlling an RF signal that is provided by a transmitter into an optical communication channel , the apparatus comprising:an input waveguide;a receiver; anda feedback path; wherein:the input waveguide operably couples a portion of the RF signal in the optical communications channel to the receiver; a photodiode that generates an electronic output in response to the portion of the RF signal, and', 'an analog spectral monitoring unit that generates feedback, from the portion of the RF signal, on channel distortion within the optical communication channel;, 'the receiver comprisesthe feedback path provides the feedback on channel distortion within the optical communication channel to the transmitter; andthe input waveguide, the receiver and the feedback path are integrated within a silicon photonics chip.3. The apparatus of claim 2 , wherein the analog spectral monitoring unit comprises a plurality of spectral filters.4. The apparatus of claim 3 , wherein the plurality of spectral filters include:a low pass filter that provides a low frequency passband, bounded by an low pass cutoff frequency;a high pass filter that provides a high frequency passband, bounded by a high pass ...

METHOD AND SYSTEM FOR HYBRID INTEGRATION OF A TUNABLE LASER AND A MACH ZEHNDER MODULATOR

A tunable pulsed laser includes a substrate comprising a silicon material and a gain medium coupled to the substrate. The gain medium includes a compound semiconductor material. The tunable pulsed laser also includes a waveguide disposed in the substrate and optically coupled to the gain medium, an optical modulator optically coupled to the gain medium, a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate, and a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate. The tunable pulsed laser further includes an optical coupler disposed in the substrate and joining the first wavelength selective element, the second wavelength selective element, and the waveguide and an output mirror. 1. A tunable pulsed laser comprising:a substrate comprising a silicon material;a gain medium coupled to the substrate, wherein the gain medium includes a compound semiconductor material;an optical modulator optically coupled to the gain medium;a waveguide disposed in the substrate and optically coupled to the gain medium;a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate;a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate;an optical coupler disposed in the substrate and joining the first wavelength selective element, the second wavelength selective element, and the waveguide; andan output mirror.2. The tunable pulsed laser of wherein:the first wavelength selective element comprises a first modulated grating reflector; andthe second wavelength selective element comprises a second modulated grating reflector.3. The tunable pulsed laser of wherein the first modulated grating reflector comprises a superstructure grating characterized by a first wavelength spacing between modes.4. The tunable pulsed laser of wherein the second modulated grating reflector ...

METHOD AND SYSTEM FOR HETEROGENEOUS SUBSTRATE BONDING OF WAVEGUIDE RECEIVERS

A composite integrated optical device includes a substrate including a silicon layer and a waveguide disposed in the silicon layer. The composite integrated optical device also includes an optical detector bonded to the silicon layer and a bonding region disposed between the silicon layer and the optical detector. The bonding region includes a metal-assisted bond at a first portion of the bonding region. The metal-assisted bond includes an interface layer positioned between the silicon layer and the optical detector. The bonding region also includes a direct semiconductor-semiconductor bond at a second portion of the bonding region. 1. A composite integrated optical device comprising:a substrate comprising a silicon layer;a waveguide disposed in the silicon layer;an optical detector bonded to the silicon layer; and a metal-assisted bond at a first portion of the bonding region, wherein the metal-assisted bond includes an interface layer positioned between the silicon layer and the optical detector; and', 'a direct semiconductor-semiconductor bond at a second portion of the bonding region., 'a bonding region disposed between the silicon layer and the optical detector, wherein the bonding region comprises2. The composite integrated optical device of wherein the metal-assisted bond provides an ohmic contact between the optical detector and the silicon layer.3. The composite integrated optical device of wherein the metal-assisted bond provides a Schottky contact between the optical detector and the silicon layer.4. The composite integrated optical device of wherein the substrate comprises a silicon on insulator wafer including a silicon substrate claim 1 , an oxide layer disposed on the silicon substrate claim 1 , and the silicon layer disposed on the oxide layer.5. The composite integrated optical device of wherein the optical detector comprises a III-V optical device.6. The composite integrated optical device of wherein the III-V optical device comprises an APD ...

METHOD AND SYSTEM FOR TEMPLATE ASSISTED WAFER BONDING

A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the SOI substrate and the assembly substrate, joining the SOI substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure. 1. A method of fabricating a composite semiconductor structure , the method comprising:providing an SOI substrate including a plurality of silicon-based devices;providing a compound semiconductor substrate including a plurality of photonic devices;dicing the compound semiconductor substrate to provide a plurality of photonic dies, each die including one or more of the plurality of photonics devices;providing an assembly substrate;mounting the plurality of photonic dies on predetermined portions of the assembly substrate;aligning the SOI substrate and the assembly substrate;joining the SOI substrate and the assembly substrate to form a composite substrate structure; andremoving at least a portion of the assembly substrate from the composite substrate structure.2. The method of wherein the plurality of silicon-based devices comprise CMOS devices.3. The method of wherein the plurality of silicon-based devices comprise at least one of a detector claim 1 , a CCD claim 1 , logic circuits claim 1 , or emitter coupled logic circuits claim 1 , BiCMOS circuits claim 1 , NMOS circuits claim 1 , PMOS circuits claim 1 , or other silicon-based devices or circuits.4. The method of ...

Method and system for template assisted wafer bonding

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

INTEGRATED WAVEGUIDE COUPLER

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction. 1. An integrated waveguide coupler comprising:a first waveguide;a second waveguide; anda connecting waveguide disposed between the first waveguide and the second waveguide, wherein the connecting waveguide comprises a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.2. The waveguide coupler of further comprising a material disposed vertically with respect to the first waveguide claim 1 , the second waveguide claim 1 , and the connecting waveguide claim 1 , wherein the material is characterized by a lower index of refraction than effective indices of the first waveguide claim 1 , the second waveguide claim 1 , and the connecting waveguide.3. The waveguide coupler of wherein the material comprises a passivating oxide.4. The waveguide coupler of wherein an effective index of the first waveguide is substantially equal to an effective index of the second waveguide.5. The waveguide coupler of wherein the first waveguide and the second waveguide are coupled along a longitudinal direction and the connecting waveguide is characterized by a tapered width along the longitudinal direction.6. A method of fabricating a waveguide coupler claim 1 , the method comprising:providing a substrate including a first waveguide and a second waveguide, both waveguides being operable to guide light along a longitudinal direction and spatially separated by a gap having a bottom surface;forming a first material in the gap, wherein the first material has a first index; andforming a second material in the gap, wherein the ...

Systems and methods for photonic polarization beam splitters

An integrated photonic polarization beam splitter includes an optical coupler having an input port, a first output port, and a second output port. The optical coupler is operable to couple a portion of an input light beam at the input port into the first output port and another portion of the input light beam into the second output port. The integrated photonic polarization beam splitter also includes a first waveguide having a first linear polarizer embedded therein and coupled to the first output port of the optical coupler and a second waveguide having a second linear polarizer embedded therein and coupled to the second output port of the optical coupler.

SYSTEMS AND METHODS FOR PHOTONIC POLARIZATION ROTATORS

A waveguide polarization rotator includes a substrate having a surface and a waveguide coupled to the surface of the substrate and operable to support a light beam along a direction of beam propagation. The waveguide includes a slab having a support surface and a second surface opposing the support surface and a rib protruding from the second surface of the slab in a direction substantially normal to the surface of the substrate and extending along the direction of beam propagation. The rib includes a first portion extending to a first height above the second surface of the slab and a second portion adjacent to the first portion and extending to a second height above the second surface of the slab. The second height is less than the first height. 1. A waveguide polarization rotator comprising:a substrate having a surface; a slab having a support surface and a second surface opposing the support surface; and', a first portion extending to a first height above the second surface of the slab; and', 'a second portion adjacent to the first portion and extending to a second height above the second surface of the slab, wherein the second height is less than the first height., 'a rib protruding from the second surface of the slab in a direction substantially normal to the surface of the substrate and extending along the direction of beam propagation, wherein the rib comprises], 'a waveguide coupled to the surface of the substrate and operable to support a light beam along a direction of beam propagation, wherein the waveguide comprises2. The waveguide polarization rotator of wherein the rib further comprises additional portions claim 1 , each of the additional portions successively extending to progressively reduced heights less than the second height.3. The waveguide polarization rotator of wherein the second portion and the additional portions are characterized by a width defined in a direction orthogonal to the normal to the surface of the substrate and the direction of ...

SYSTEMS AND METHODS FOR PHOTONIC POLARIZATION-SEPARATING APPARATUSES FOR OPTICAL NETWORK APPLICATIONS

An integrated photonic polarization-separating apparatus includes a first waveguide polarization beam splitter (PBS) having a first port, a second port, a third port, and a fourth port and a first polarization rotator optically coupled to the first port of the first waveguide PBS. The apparatus also includes a first Faraday rotator optically coupled to the first polarization rotator and a second polarization rotator optically coupled to the second port of the first waveguide PBS. The apparatus further includes a second Faraday rotator optically coupled to the second polarization rotator and a second waveguide PBS having a first port, a second port, a third port, and a fourth port. The third port is optically coupled to the first Faraday rotator and the fourth port is optically coupled to the second Faraday rotator. 1. An integrated photonic polarization-separating apparatus comprising:a first waveguide polarization beam splitter (PBS) having a first port, a second port, a third port, and a fourth port;a first polarization rotator optically coupled to the first port of the first waveguide PBS;a first Faraday rotator optically coupled to the first polarization rotator;a second polarization rotator optically coupled to the second port of the first waveguide PBS;a second Faraday rotator optically coupled to the second polarization rotator; anda second waveguide PBS having a first port, a second port, a third port, and a fourth port, wherein the third port is optically coupled to the first Faraday rotator and the fourth port is optically coupled to the second Faraday rotator.2. The integrated photonic polarization-separating apparatus of wherein each of the first polarization rotator and the second polarization rotator comprises a 45-degree polarization rotator.3. The integrated photonic polarization-separating apparatus of wherein each of the first Faraday rotator and the second Faraday rotator comprises a negative 45-degree Faraday rotator.4. The integrated photonic ...

VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES

A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

TUNABLE HYBRID LASER WITH CARRIER-INDUCED PHASE CONTROL

A tunable laser includes a substrate comprising a silicon material, a gain medium coupled to the substrate, wherein the gain medium includes a compound semiconductor material, and a waveguide disposed in the substrate and optically coupled to the gain medium. The tunable laser also includes a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate and a carrier-based phase modulator optically coupled to the first wavelength selective element. The tunable laser further includes a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate, an optical coupler disposed in the substrate and optically coupled to the first wavelength selective element, the second wavelength selective element, and the waveguide, and an output mirror. 1. A tunable laser comprising:a substrate comprising a silicon material;a gain medium coupled to the substrate, wherein the gain medium includes a compound semiconductor material;a waveguide disposed in the substrate and optically coupled to the gain medium;a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate;a carrier-based phase modulator optically coupled to the first wavelength selective element;a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate;an optical coupler disposed in the substrate and optically coupled to the first wavelength selective element, the second wavelength selective element, and the waveguide; andan output mirror.2. The tunable laser of wherein the first carrier-based phase modulator comprises a p-i-n diode optically coupled to a waveguide disposed between the optical coupler and the first wavelength selective element.3. The tunable laser of further comprising a second carrier-based phase modulator optically coupled to the second waveguide selective element.4. The tunable laser of wherein the ...

TUNABLE REFLECTORS BASED ON MULTI-CAVITY INTERFERENCE

A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structures further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors. 1. A reflective structure comprising:an input/output port;an optical splitter coupled to the input/output port, the optical splitter having a first branch and a second branch;a first resonant cavity optically coupled to the first branch of the optical splitter, wherein the first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors; anda second resonant cavity optically coupled to the second branch of the optical splitter, wherein the second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors.2. The reflective structure of further comprising a phase control section disposed in the first branch of the optical splitter.3. The reflective structure of wherein at least one of the first waveguide region or the second waveguide region comprises a phase control element.4. The reflective structure of wherein the phase control element comprises at least one of a heater or a carrier-based element.5. The reflective structure of wherein the optical splitter comprises a directional coupler.6. The reflective structure of wherein the first set of reflectors and the second set of reflectors comprise modulated waveguide structures.7. The ...

Method and system for template assisted wafer bonding

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

METHOD AND SYSTEM FOR THE MONOLITHIC INTEGRATION OF CIRCUITS FOR MONITORING AND CONTROL OF RF SIGNALS

A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power. 1. A method of operating a BPSK modulator , the method comprising:receiving an RF signal at the BPSK modulator;splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion;receiving the first portion at a first arm of the BPSK modulator;receiving the second portion at a second arm of the BPSK modulator;applying a first tone to the first arm of the BPSK modulator;applying a second tone to the second arm of the BPSK modulator;measuring a power associated with an output of the BPSK modulator; andadjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.2. The method of wherein adjusting the phase comprises increasing the power associated with the output of the BPSK modulator.3. The method of wherein increasing the power comprises maximizing the power.4. The method of wherein measuring the power associated with the output of the BPSK modulator comprises spectrally filtering the output.5. The method of wherein spectrally filtering the output comprises performing band pass filtering at a difference frequency of the first tone and the second tone.6. The method of wherein ...

METHOD AND SYSTEM FOR PERFORMING TESTING OF PHOTONIC DEVICES

A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide. 1. A photonics system including:a transmit photonics module;a receive photonics module;a transmit waveguide coupled to the transmit photonics module;a first optical switch integrated with the transmit waveguide;a diagnostics waveguide optically coupled to the first optical switch;a receive waveguide coupled to the receive photonics module; anda second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide.2. The system of further comprising an optical tap coupled to the diagnostics waveguide.3. The system of further comprising a detector coupled to the optical tap.4. The system of further comprising an optical coupler coupled to the optical tap.5. The system of wherein the optical coupler comprises an out-of-plane coupler.6. The system of wherein the out-of-plane coupler comprises at least one of an angled facet or a surface emitting grating structure.7. The system of further comprising a second out-of-plane coupler optically coupled to the diagnostics waveguide.8. The system of further comprising at least one of testing circuits or link validation circuits.9. The system of wherein the first optical switch and the second optical switch comprise variable couplers.10. A method of performing testing of a photonic device claim 1 , the method comprising:generating a test pattern;generating an optical signal associated with the test pattern;transmitting the optical signal through a transmit ...

INTEGRATED OPTICAL NETWORK UNIT

An optical network unit includes a transmit/receive port and a silicon waveguide optically coupled to the transmit/receive port. The optical network unit also includes a tunable filter coupled to the silicon waveguide and providing a first output for a first frequency band and a second output for a second frequency band. The optical network unit further includes a polarization diverse receiver coupled to the tunable filter and a laser coupled to the tunable filter. 1. An optical network unit comprising:a transmit/receive port;a silicon waveguide optically coupled to the transmit/receive port;a tunable filter coupled to the silicon waveguide and providing a first output for a first frequency band and a second output for a second frequency band;a polarization diverse receiver coupled to the tunable filter; anda laser coupled to the tunable filter.2. The optical network unit of wherein the polarization diverse receiver includes:a polarization splitter coupled to the first output and providing a first polarization output and a second polarization output;a first L-band band pass filter coupled to the first polarization output;a polarization rotator coupled to the second polarization output;a second L-band band pass filter coupled to the polarization rotator; anda detector coupled to the first L-band band pass filter and the second L-band band pass filter.3. The optical network unit of wherein the detector comprises a III-V material coupled to a silicon structure.4. The optical network unit of wherein the detector comprises a germanium material coupled to a silicon structure.5. The optical network unit of wherein the laser comprises a tunable laser.6. The optical network unit of further comprising an optical modulator disposed between the laser and the C-band band pass filter.7. The optical network unit of wherein the filter passes C-band signals from the silicon waveguide to the first output in a downstream path and passes L-band signals from the second output to the ...

INTEGRATED WAVEGUIDE COUPLER

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction. 1. (canceled)2. An integrated waveguide coupler comprising:a semiconductor waveguide configured to guide light in a direction of beam propagation;a cladding surrounding the semiconductor waveguide, wherein the cladding has a lower refractive index than the semiconductor waveguide; the opto-electronic device comprises a facet;', 'the facet has an orientation identified by a direction normal to the facet;', 'the direction normal to the facet is not parallel with the direction of beam propagation of the semiconductor waveguide; and, 'an opto-electronic device, whereinthe opto-electronic device is configured to guide light to pass through the facet; and the direction of beam propagation is ascertained at an interface between the semiconductor waveguide and the connecting waveguide;', 'the semiconductor waveguide has a height;', 'the connecting waveguide has a height; and', 'the height of the connecting waveguide is equal to the height of the semiconductor waveguide., 'a connecting waveguide between the semiconductor waveguide and the facet of the opto-electronic device, wherein3. The integrated waveguide coupler as recited in claim 2 , wherein the opto-electronic device comprises III-V material.4. The integrated waveguide coupler as recited in claim 2 , wherein the connecting waveguide has a length between 1 and 100 microns.5. The integrated waveguide coupler as recited in claim 2 , wherein the integrated waveguide coupler comprises a first material directly under the connecting waveguide having a first index of refraction claim 2 , and the connecting waveguide comprises a second material having a ...

Method and system for heterogeneous substrate bonding for photonic integration

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

Integrated waveguide coupler

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

On-chip high capacitance termination for transmitters

A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

COPLANAR INTEGRATION OF A DIRECT-BANDGAP CHIP INTO A SILICON PHOTONIC DEVICE

A method for fabricating a composite device comprises providing a platform, providing a chip, and bonding the chip to the platform. The platform has a base layer and a device layer above the base layer. An opening in the device layer exposes a portion of the base layer. The chip is bonded to the portion of the base layer exposed by the opening in the device layer. A portion of the chip extends above the platform and is removed. 1. A method for fabricating a composite device used for photonics , the method comprising: a base layer;', 'a device layer above the base layer of the platform, wherein the device layer comprises a plurality of walls forming an opening in the device layer such that a portion of the base layer of the platform is exposed through the device layer;, 'providing a platform, the platform comprising a substrate; and', 'an active region;, 'providing a chip, the chip comprisingbonding the chip to the portion of the base layer of the platform.2. The method for fabricating the composite device as recited in claim 1 , wherein:the chip extends through the opening of the device layer;the substrate of the chip extends above the platform, out of the recess; andthe active region of the chip is aligned with the device layer.3. The method for fabricating the composite device as recited in claim 2 , further comprising removing at least a portion of the substrate of the chip claim 2 , while the chip is bonded to the platform claim 2 , so that the chip does not extend above the platform.4. The method for fabricating the composite device as recited in claim 1 , wherein the platform is silicon and the chip is a direct-bandgap material.5. The method for fabricating the composite device as recited in claim 1 , further comprising aligning the active region with the device layer using pedestals formed in the platform.6. A method for fabricating a composite device claim 1 , the method comprising: the platform comprises a recess; and', 'the platform comprises a first ...

STRUCTURES FOR BONDING A DIRECT-BANDGAP CHIP TO A SILICON PHOTONIC DEVICE

A composite photonic device comprises a platform, a chip, and a contact layer. The platform comprises silicon. The chip is made of a III-V material. The contact layer has indentations to help control a flow of solder during bonding of the platform with the chip. In some embodiments, pedestals are placed under an optical path to prevent solder from flowing between the chip and the platform at the optical path. 1. A composite device for splitting functionality across two or more materials , the composite device comprising:a platform, the platform comprising a recess;a chip bonded in the recess of the platform; and the contact layer comprises a first indentation on a first side of the contact layer; and', 'the contact layer comprises a second indentation on a second side of the contact layer., 'a contact layer used in bonding the platform to the chip wherein2. The composite device of claim 1 , wherein:the first indentation comprises a first portion and a second portion;the first portion of the first indentation is wider than the second portion of the first indentation;the first portion of the first indentation is closer to a center of the contact layer than the second portion of the first indentation;the second indentation comprises a first portion and a second portion;the first portion of the second indentation is wider than the second portion of the second indentation; andthe first portion of the second indentation is closer to the center of the contact layer than the second portion of the second indentation.3. The composite device of claim 1 , further comprising a plurality of pedestals in the recess of the platform claim 1 , wherein the first indentation is located between two pedestals of the plurality of pedestals.4. The composite device of claim 1 , wherein:the composite device further comprises a pedestal in the recess of the platform; andthe contact layer comprises a third indentation around at least 3 sides of the pedestal.5. The composite device of claim 4 , ...

INTEGRATION OF AN UNPROCESSED, DIRECT-BANDGAP CHIP INTO A SILICON PHOTONIC DEVICE

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a III-V material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermitically seals the chip in the platform. 1. A composite device for splitting photonic functions across two or more materials , the composite device comprising: a base layer;', the device layer comprises a first material;', 'the first material is a semiconductor; and', 'the device layer comprises a plurality of walls forming an opening in the device layer such that a portion of the base layer of the platform is exposed through the device layer;, 'a device layer above the base layer, wherein], 'a platform, the platform comprising the chip comprises an active region; and', 'the active region comprises a second material;, 'a chip, wherein the chip is secured to the base layer of the platform; and', 'the device layer of the platform is aligned with the active region of the chip; and, 'a bond securing the chip to the platform, whereina coating, wherein the coating hermetically seals the chip in the platform.2. The composite device as recited in claim 1 , wherein:the first material is silicon;a waveguide and mirrors are elements in the device layer;the waveguide and mirrors form a resonant cavity for a laser;the second material is a III-V material; andthe III-V material provides a gain medium for the laser; andthe device layer of the platform is aligned with the active region of the chip.3. The composite device as recited in claim 1 , wherein:a gap is formed between the chip and a wall of the plurality of ...

PROCESSING OF A DIRECT-BANDGAP CHIP AFTER BONDING TO A SILICON PHOTONIC DEVICE

A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip is used as a gain medium and the platform is at least partially made of silicon. 1. A method for fabricating a composite device for splitting functionality across two or more materials , the method comprising: [ the platform comprises a recess; and', 'the platform comprises a first material; and, 'a platform, wherein, the chip is bonded in the recess of the platform; and', 'the chip comprises a second material; and, 'a chip, wherein], 'providing a composite device, the composite device comprisingmasking the composite device to define an area on the chip to etch; andetching the chip after the chip is bonded to the platform.2. The method for fabricating the composite device as recited in claim 1 , wherein the first material is silicon.3. The method for fabricating the composite device as recited in claim 1 , wherein the second material is a III-V material.4. The method for fabricating the composite device as recited in claim 1 , wherein etching the chip forms a waveguide on the chip.5. The method for fabricating the composite device as recited in claim 4 , wherein the waveguide on the chip is aligned with a waveguide in the platform by using photolithography processes to form the waveguide on the chip after the chip is bonded to the platform.6. The method for fabricating the composite device as recited in claim 1 , the method further comprising covering the chip to hermetically seal the chip in the recess.7. The method for fabricating the composite device as recited in claim 1 , wherein etching the chip is performed in a processing chamber used to make CMOS devices.8. The method for fabricating the composite device as recited in claim 1 ...

METHOD AND SYSTEM FOR HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector. 1. A method of fabricating a hybrid integrated optical device , the method comprising:providing a substrate comprising a silicon layer;providing a compound semiconductor device; a metal-semiconductor bond at a first portion of the bonding region, wherein the metal-semiconductor bond includes a first pad bonded to the silicon layer, a bonding metal bonded to the first pad, and a second pad bonded to the bonding metal and the compound semiconductor device; and', 'an interface assisted bond at a second portion of the bonding region, wherein the interface assisted bond includes an interface layer positioned between the silicon layer and the compound semiconductor device, wherein the interface assisted bond provides an ohmic contact between the silicon layer and the compound semiconductor device., 'forming a bonding region disposed between the silicon layer and the compound semiconductor device, wherein the bonding region comprises2. The method of wherein the substrate comprises a silicon on insulator wafer including a silicon substrate claim 1 , an oxide layer disposed on the silicon substrate claim 1 , and the silicon layer disposed on the oxide layer.3. The method of wherein the compound semiconductor device comprises an InP semiconductor laser.4. The method of wherein the second portion of the bonding region is substantially free from the interface layer at a position adjacent an active region of the InP semiconductor laser.5. The method of wherein the first ...

INTEGRATION OF AN UNPROCESSED, DIRECT-BANDGAP CHIP INTO A SILICON PHOTONIC DEVICE

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening, such that the active region of the chip is aligned with the device layer of the platform. 1. A method for fabricating a composite device for splitting functionality across two or more materials , the method comprising:aligning a first mask with a target to define an etch area on a platform, wherein the platform comprises a first material;etching a recess in the platform defined by the etch area; the chip is made of a second material; and', 'the second material is different from the first material;, 'bonding a chip in the recess of the platform, whereinaligning a second mask with the target to define a feature area, wherein the feature area is over the chip; andprocessing the feature area of the chip to form a feature on the chip.2. The method for fabricating the composite device as recited in claim 1 , wherein:the first material comprises silicon; andthe second material comprises III-V material.3. The method for fabricating the composite device as recited in claim 1 , wherein the feature is a waveguide.4. The method for fabricating the composite device as recited in claim 3 , wherein the waveguide on the chip is aligned claim 3 , during processing claim 3 , with a second waveguide that is part of the platform.5. The method for fabricating the composite device as recited in claim 1 , wherein the feature is a contact metal.6. The method for fabricating the composite device as recited in claim 1 , wherein:the platform comprises a silicon-on-insulator (SOI) wafer; andetching the recess in the platform comprises ...

METHOD AND SYSTEM FOR TEMPLATE ASSISTED WAFER BONDING USING PEDESTALS

A multilayer semiconductor has stacks of composite semiconductor materials. Multiple composite devices are bonded on a silicon-on-insulator wafer forming an integrated device. 1. A method of fabricating a multilevel semiconductor structure , the method comprising:providing a first substrate including a first plurality of silicon based devices;providing a second substrate including a second plurality of devices;dicing the second substrate to provide a plurality of dies, each die including one or more of the second plurality of devices;providing a third substrate;mounting the plurality of dies on predetermined portions of the third substrate;aligning the first substrate and the third substrate;joining the first substrate and the third substrate to form a composite structure; andremoving at least a portion of the third substrate from the composite structure,providing a fourth substrate;aligning the fourth substrate with the composite structure; andjoining the fourth substrate and the composite structure to form a semiconductor structure having multiple levels.2. The method of fabricating the multilevel semiconductor structure as recited in claim 1 , wherein the first substrate is a silicon-on-insulator (SOI) substrate.3. The method of fabricating the multilevel semiconductor structure as recited in claim 1 , wherein the first plurality of devices are silicon-based devices.4. The method of fabricating the multilevel semiconductor structure as recited in claim 1 , wherein the first plurality of devices comprise photonic dies.5. The method of fabricating the multilevel semiconductor structure as recited in claim 1 , wherein the second substrate is a compound semiconductor substrate.6. The method of fabricating the multilevel semiconductor structure as recited in claim 1 , further comprising removing at least a portion of the fourth substrate from the composite structure.7. The method of fabricating the multilevel semiconductor structure as recited in claim 1 , wherein:the ...

VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES

A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure. 1. (canceled)2. A method of fabricating a composite semiconductor structure , the method comprising:providing a substrate;providing a photonic die;aligning the photonic die with the substrate;joining the substrate and the photonic die to form a composite substrate; andprocessing the composite substrate to form a feature on the photonic die, wherein the processing the composite substrate is performed after joining the substrate and the photonic die.3. The method of fabricating the composite semiconductor structure as recited in claim 2 , wherein the feature on the photonic die is a stripe region.4. The method of fabricating the composite semiconductor structure as recited in claim 3 , wherein the stripe region is an optical waveguide.5. The method of fabricating the composite semiconductor structure as recited in claim 2 , wherein the feature on the photonic die an electrical interconnect.6. The method of fabricating the composite semiconductor structure as recited in claim 2 , further comprising using an alignment tolerance of approximately ±10 μm for aligning the photonic die with ...

Transceiver module for optical communication

A device for optical communication is described. The device comprises two transceivers integrated on one chip. A first transceiver can be used with existing optical-communication architecture. As a more advanced optical-communication architecture becomes adopted, the device can be switched from using the first transceiver to using a second transceiver to communicate using the more advanced optical-communication architecture.

METHOD AND SYSTEM FOR HYBRID INTEGRATION OF A TUNABLE LASER

A cable television transmitter includes a substrate including a silicon material, control electronics disposed in the substrate, and a gain medium coupled to the substrate. The gain medium includes a compound semiconductor material. The cable television transmitter also includes an optical modulator optically coupled to the gain medium and electrically coupled to the control electronics, a waveguide disposed in the substrate and optically coupled to the gain medium, a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate, and a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate. The cable television transmitter further includes an optical coupler disposed in the substrate and joining the first wavelength selective element, the second wavelength selective element, and the waveguide and an output mirror. 1. (canceled)2. A tunable laser comprising:a gain medium comprising a compound semiconductor material; anda substrate comprising a silicon material, defining a waveguide, and supporting the gain medium;a first tunable wavelength selective element disposed in the substrate and characterized by a first reflectance spectrum having a first plurality of reflectance peaks separated by a first spacing interval; anda second tunable wavelength selective element disposed in the substrate and characterized by a second reflectance spectrum having a second plurality of reflectance peaks separated by a second spacing interval that is different from the first spacing interval.3. The tunable laser of claim 2 , wherein a surface of the compound semiconductor material forms an output mirror claim 2 , and wherein the first and second tunable wavelength selective elements are optically coupled with the gain medium through the waveguide claim 2 , such that the first and second reflectance spectra constructively interfere at a single one of each of the first and second ...

METHOD AND SYSTEM FOR PERFORMING TESTING OF PHOTONIC DEVICES

A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide. 1. (canceled)2. A photonics system for wafer-level testing , the photonics system comprising:a chip; the transmitter is on the chip; and', 'the transmitter is an optical transmitter;, 'a transmitter, wherein the receiver is on the chip; and', 'the receiver is an optical receiver; and, 'a receiver, wherein the diagnostics waveguide is on the chip; and', 'the diagnostics waveguide optically couples light from the transmitter with the receiver., 'a diagnostics waveguide, wherein3. The photonics system as recited in claim 2 , further comprising: the transmit waveguide is on the chip; and', 'the transmit waveguide is coupled with the transmitter; and, 'a transmit waveguide, wherein the receive waveguide is on the chip;', 'the receive waveguide is coupled with the receiver; and', 'the diagnostics waveguide optically couples light from the transmitter with the receiver by optically coupling the transmit waveguide with the receive waveguide., 'a receive waveguide, wherein4. The photonics system as recited in claim 2 , further comprising: the first switch is on the chip; and', 'the first switch optically couples the transmitter with the diagnostics waveguide; and, 'a first switch, wherein the second switch is on the chip; and', 'the second switch optically couples the receiver with the diagnostics waveguide., 'a second switch, wherein5. The photonics system as recited in claim 4 , further comprising:a transmit port, wherein the transmit port is ...

Method and system for heterogeneous substrate bonding for photonic integration

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

INTEGRATED PHOTONICS MODE EXPANDER

A method of fabricating a waveguide mode expander includes providing a substrate including a waveguide, bonding a chiplet including multiple optical material layers in a mounting region adjacent an output end of the waveguide, and selectively removing portions of the chiplet to form tapered stages that successively increase in number and lateral size from a proximal end to a distal end of the chiplet. The first optical material layer supports an input mode substantially the same size as a mode exiting the waveguide. One or more of the overlying layers, when combined with the first layer, support a larger, output optical mode size. Each tapered stage of the mode expander is formed of a portion of a respective layer of the chiplet. The first layer and the tapered stages form a waveguide mode expander that expands an optical mode of light traversing the chiplet.

TUNABLE REFLECTORS BASED ON MULTI-CAVITY INTERFERENCE

A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structures further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors. 1. A reflective structure comprising:an input/output port; and a primary arm including a primary propagation section, a first primary reflector coupled to the primary propagation section, a primary Y-junction waveguide coupled to the primary propagation section, and a second primary reflector coupled to the primary Y-junction waveguide; and', 'a secondary arm including a secondary propagation section, a first secondary reflector coupled to the secondary propagation section, a secondary Y-junction waveguide coupled to the secondary propagation section, and a second secondary reflector coupled to the secondary Y-junction waveguide., 'a Y-junction waveguide optically coupled to the input/output port, wherein the Y-junction waveguide comprises2. The reflective structure of wherein at least one of the primary propagation section or the secondary propagation section comprises a variable index of refraction region.3. The reflective structure of wherein both the primary propagation section and the secondary propagation section comprise a variable index of refraction region.4. The reflective structure of wherein the first primary reflector claim 1 , the second primary reflector claim 1 , the first secondary reflector claim 1 , and the second secondary reflector comprise sidewall ...

METHOD AND SYSTEM FOR PERFORMING TESTING OF PHOTONIC DEVICES

A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide. 1. (canceled)2. A system for optical communication , the system comprising:a chip; the transmitter is on the chip; and', 'the transmitter generates light;, 'a transmitter, wherein the receiver is on the chip; and', 'the receiver is an optical receiver; and, 'a receiver, wherein the diagnostics waveguide is on the chip; and', 'the diagnostics waveguide optically couples light from the transmitter with the receiver., 'a diagnostics waveguide, wherein3. The system of claim 2 , further comprising a photodetector integrated on the chip and optically coupled with the transmitter.4. The system of claim 3 , further comprising a branching coupler that couples the photodetector with the diagnostics waveguide claim 3 , such that the photodetector is optically coupled with the transmitter.5. The system of claim 3 , wherein the photodetector provides data on optical power claim 3 , wavelength claim 3 , spectral characteristics claim 3 , and/or compliance with modulation or communication standards of light generated by the transmitter.6. The system of claim 2 , wherein the chip is part of an undiced wafer.7. The system of claim 2 , further comprising: the transmit waveguide is on the chip; and', 'the transmit waveguide is coupled with the transmitter; and, 'a transmit waveguide, wherein the receive waveguide is on the chip;', 'the receive waveguide is coupled with the receiver; and', 'the diagnostics waveguide optically couples light from the ...

MULTISTAGE SPOT SIZE CONVERTER IN SILICON PHOTONICS

A device is provided for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber. The device includes a waveguide comprising a waveguide taper region, which comprises a shoulder portion and a ridge portion above the shoulder portion. The ridge portion has a width that tapers to meet a width of the shoulder portion. The waveguide taper region comprises a first material. The device also has a mode converter coupled to the waveguide. The mode converter includes a plurality of stages, and each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region. The mode converter is made of a second material different from the first material. 1. A device for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber , the device comprising: the waveguide taper region comprises a shoulder portion and a ridge portion above the shoulder portion, the ridge portion having a width that tapers to meet a width of the shoulder portion; and', 'the waveguide taper region comprises a first material; and, 'a waveguide comprising a waveguide taper region, wherein the mode converter comprises a plurality of stages;', 'each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region; and', 'the mode converter is made of a second material different from the first material., 'a mode converter coupled to the waveguide, wherein2. The device of claim 1 , wherein:the mode converter comprises a first stage and a second stage of the plurality of stages, the second stage overlying the first stage;the first stage comprises a first portion that does not taper and a second portion that tapers; andthe second stage extends over the first portion and the second portion of the first stage.3. The device of claim 2 , wherein the first portion of the first stage of the mode converter and the shoulder portion of the waveguide ...

Method and system for heterogeneous substrate bonding for photonic integration

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

METHOD AND SYSTEM FOR HEIGHT REGISTRATION DURING CHIP BONDING

A method of fabricating a composite semiconductor structure is provided. Pedestals are formed in a recess of a first substrate. A second substrate is then placed within the recess in contact with the pedestals. The pedestals have a predetermined height so that a device layer within the second substrate aligns with a waveguide of the first substrate, where the waveguide extends from an inner wall of the recess. 1. A method of fabricating a composite semiconductor device , the method comprising: a recess with a first bottom surface; and', 'a waveguide extending to a wall of the recess, the waveguide at a first predetermined height above the first bottom surface;, 'providing a first semiconductor structure comprising a first material and havingforming one or more pedestals extending to a second predetermined height in a direction normal to the first bottom surface; a second bottom surface; and', 'a device layer above the second bottom surface;, 'providing a second semiconductor structure comprising a second material havingplacing the second semiconductor structure in the recess of the first semiconductor structure; andbonding the second bottom surface of the second semiconductor structure to the first bottom surface of the first semiconductor structure, wherein the second bottom surface of the second semiconductor structure contacts a top surface of the one or more pedestals such that the device layer of the second semiconductor structure is aligned with the waveguide of the first semiconductor structure.2. The method of claim 1 , wherein the first material is silicon and the second material is a III-V compound.3. The method of claim 1 , wherein:the pedestals have a height h above the first bottom surface;the waveguide has a height x above the first bottom surface; andthe device layer has a height x−h above the second bottom surface.4. The method of claim 1 , further comprising:depositing a bonding material on the first bottom surface around the one or more pedestals ...

METHOD AND SYSTEM FOR TEMPLATE ASSISTED WAFER BONDING

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure. 1. (canceled)2. A method of fabricating a composite semiconductor structure , the method comprising:providing a first substrate having a device surface and one or more semiconductor devices thereon;providing a second substrate having epitaxial compound semiconductor materials;dicing the second substrate to provide a plurality of compound semiconductor dies; andbonding at least one of the plurality of compound semiconductor dies to the first substrate to form the composite semiconductor structure.3. The method of fabricating the composite semiconductor structure as recited in claim 2 , the method further comprising bonding the plurality of compound semiconductor dies to the first substrate.4. The method of fabricating the composite semiconductor structure as recited in claim 2 , wherein:the first substrate is etched to form a pit; andat least one of the plurality of compound semiconductor dies is bonded in the pit.5. The method of fabricating the composite semiconductor structure as recited in claim 4 , wherein the at least one of the plurality of compound semiconductor dies is covered after being bonded in the pit.6. The method of fabricating the composite semiconductor structure as recited in ...

HIGH-SPEED OPTICAL TRANSMITTER WITH A SILICON SUBSTRATE AND MULTIPLE MULTIPLEXERS

A 400 Gb/s transmitter is integrated on a silicon substrate. The transmitter uses four gain chips, sixteen lasers, four modulators to modulate the sixteen lasers at 25 Gb/s, and four multiplexers to produce four optical outputs. Each optical output can transmit at 100 Gb/s to produce a 400 Gb/s transmitter. Other variations are also described. 1. An optical transmitter comprising:a substrate;a first gain chip integrated on the substrate;a second gain chip integrated on the substrate;a first multiplexer integrated on the substrate, wherein the first multiplexer is configured to receive an optical input from the first gain chip and an optical input from the second gain chip; anda second multiplexer integrated on the substrate, wherein the second multiplexer is configured to receive an optical input from the first gain chip and an optical input from the second gain chip.2. The optical transmitter of claim 1 , further comprising:a third multiplexer integrated on the substrate, wherein the third multiplexer is configured to receive an optical input from the first gain chip and an optical input from the second gain chip; anda fourth multiplexer integrated on the substrate, wherein the fourth multiplexer is configured to receive an optical input from the first gain chip and an optical input from the second gain chip.3. The optical transmitter of claim 2 , further comprising a plurality of waveguides integrated on the substrate claim 2 , configured to guide light to the first multiplexer claim 2 , the second multiplexer claim 2 , the third multiplexer claim 2 , and the fourth multiplexer.4. The optical transmitter of claim 1 , further comprising a plurality of reflectors claim 1 , wherein the plurality of reflectors are configured to form a plurality of lasers with the first gain chip and the second gain chip.5. The optical transmitter of claim 4 , wherein the plurality of lasers operate on optical channels that are spaced using a 20 nm channel spacing plus or minus 30%.6. ...

MULTILEVEL TEMPLATE ASSISTED WAFER BONDING

Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure. 17.-. (canceled)8. A composite semiconductor device comprising:a substrate comprising a waveguide; the photonic die is joined to the substrate;', 'the photonic die comprises a waveguide;', 'the waveguide of the photonic die is formed on the photonic die after the photonic die is joined to the substrate; and', 'the waveguide of the photonic die is optically coupled with the waveguide of the substrate., 'a photonic die, wherein9. The composite semiconductor device as recited in claim 8 , wherein the substrate is a silicon-on-insulator (SOI) substrate.10. The composite semiconductor device as recited in claim 9 , wherein:the SOI substrate comprises a handle layer, a buried-oxide layer, and a device layer; andthe device layer includes a plurality of CMOS devices.11. The composite semiconductor device as recited in claim 8 , wherein the substrate includes a plurality of silicon-based devices.12. The composite semiconductor device as recited in claim 8 , wherein the photonic die comprises III-V material.13. The composite semiconductor device as recited in claim 8 , wherein the photonic die comprises one or more photonic devices.14. The composite semiconductor device as recited in claim 8 , wherein the substrate comprises doped regions associated with transistors.15. The composite semiconductor device as recited in claim 8 , wherein the photonic die is aligned and joined to a predetermined location of the substrate.16. The composite semiconductor device as recited in claim 8 , wherein an electrical interconnect is formed on the photonic die. This application is a divisional of U.S. patent application ...

TUNABLE REFLECTORS BASED ON MULTI-CAVITY INTERFERENCE

A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structures further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors. 1. A reflective structure comprising:an input/output port;an optical splitter coupled to the input/output port, the optical splitter having a first branch and a second branch;a first resonant cavity optically coupled to the first branch of the optical splitter, wherein the first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors; anda second resonant cavity optically coupled to the second branch of the optical splitter, wherein the second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors.2. The reflective structure of further comprising a phase control section disposed in the first branch of the optical splitter.3. The reflective structure of wherein at least one of the first waveguide region or the second waveguide region comprises a phase control element.4. The reflective structure of wherein the phase control element comprises at least one of a heater or a carrier-based element.5. The reflective structure of wherein the optical splitter comprises a directional coupler.6. The reflective structure of wherein the first set of reflectors and the second set of reflectors comprise modulated waveguide structures.7. The ...

METHOD AND SYSTEM FOR THE MONOLITHIC INTEGRATION OF CIRCUITS FOR MONITORING AND CONTROL OF RF SIGNALS

A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power. 1. (canceled)2. A receiver that provides feedback for an optical transmitter , wherein the optical transmitter provides optical input into an optical communication channel and the optical input carries an RF signal , the receiver comprising:a waveguide for receiving the optical input from the optical communication channel;a photodiode that generates an electronic output in response to the RF signal; andan analog spectral monitoring unit that generates the feedback, on channel distortion within the optical communication channel, from the electronic output.3. The receiver of claim 2 , wherein the waveguide claim 2 , the photodiode and the analog spectral monitoring unit are integrated within a silicon photonics chip.4. The receiver of claim 2 , wherein the analog spectral monitoring unit comprises a plurality of spectral filters.5. The receiver of claim 4 , wherein the plurality of spectral filters include:a low pass filter that provides a low frequency passband, bounded by an low pass cutoff frequency;a high pass filter that provides a high frequency passband, bounded by a high pass cutoff frequency; anda bandpass filter that provides a center passband, bounded by the low pass cutoff frequency and the high pass cutoff ...

Integrated photonics mode expander

A method of fabricating a waveguide mode expander includes providing a substrate including a waveguide, bonding a chiplet including multiple optical material layers in a mounting region adjacent an output end of the waveguide, and selectively removing portions of the chiplet to form tapered stages that successively increase in number and lateral size from a proximal end to a distal end of the chiplet. The first optical material layer supports an input mode substantially the same size as a mode exiting the waveguide. One or more of the overlying layers, when combined with the first layer, support a larger, output optical mode size. Each tapered stage of the mode expander is formed of a portion of a respective layer of the chiplet. The first layer and the tapered stages form a waveguide mode expander that expands an optical mode of light traversing the chiplet.

INTEGRATED WAVEGUIDE COUPLER

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction. 1. (canceled)2. An integrated waveguide coupler comprising: a higher refractive index portion; and', 'a lower refractive index portion, adjacent to the higher refractive index portion of the first waveguide;, 'a first waveguide, the first waveguide comprising a higher refractive index portion; and', 'a lower refractive index portion, adjacent to the higher refractive index portion of the second waveguide;, 'a second waveguide, the second waveguide comprisinga third waveguide between the first waveguide and the second waveguide; the first region separates the first waveguide from the third waveguide;', 'the first region comprises a first material having a first index of refraction;', 'the first region comprises a second material having a second index of refraction;', 'the second index of refraction is higher than the first index of refraction;', 'the second material is different from material of the higher refractive index portion of the first waveguide; and', 'the second material is different from material of the third waveguide; and, 'a first region between the first waveguide and the third waveguide, wherein the second region separates the second waveguide from the third waveguide;', 'the second region comprises a third material having a third index of refraction;', 'the second region comprises a fourth material having a fourth index of refraction;', 'the fourth index of refraction is higher than the third index of refraction;', 'the fourth material is different from material of the higher refractive index portion of the second waveguide; and', 'the fourth material is different from material ...

On-chip high capacitance termination for transmitters

A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

SYSTEMS AND METHODS FOR PHOTONIC POLARIZATION ROTATORS

Photonic rotators integrated on a substrate are disclosed for manipulating light polarization. 1. A method of operating an apparatus comprising:receiving, at a first waveguide polarizing beam splitter (PBS) an input light beam having a TE polarization component and a TM polarization component, wherein the input light beam is propagating downstream;rotating the TE polarization component of the input light beam using a first polarization rotator to provide a first rotated TE polarization component of the input light beam;rotating the first rotated TE polarization component of the input light beam using a first Faraday rotator to provide a second rotated TE polarization component of the input light beam;rotating the TM polarization component of the input light beam using a second polarization rotator to provide a first rotated TM polarization component of the input light beam;rotating the first rotated TM polarization component of the input light beam using a second Faraday rotator to provide a second rotated TM polarization component of the input light beam; andcombining, at a second waveguide PBS, the second rotated TE polarization component and the second rotated TM polarization component of the input light beam to form a recombined input light beam propagating downstream.2. The method of further comprising:receiving, at the second waveguide PBS, an output light beam having a TE polarization component and a TM polarization component, wherein the output light beam is propagating upstream;rotating the TE polarization component of the output light beam using the first Faraday rotator to provide a first rotated TE polarization component of the output light beam;rotating the first rotated TE polarization component of the output light beam using the first polarization rotator to provide a second rotated TE polarization component of the output light beam;rotating the TM polarization component of the output light beam using the second Faraday rotator to provide a first ...

MULTISTAGE SPOT SIZE CONVERTER IN SILICON PHOTONICS

A device is provided for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber. The device includes a waveguide comprising a waveguide taper region, which comprises a shoulder portion and a ridge portion above the shoulder portion. The ridge portion has a width that tapers to meet a width of the shoulder portion. The waveguide taper region comprises a first material. The device also has a mode converter coupled to the waveguide. The mode converter includes a plurality of stages, and each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region. The mode converter is made of a second material different from the first material. 1. (canceled)2. A method for manufacturing a device for optical mode spot size conversion , the method comprising:providing a substrate having a device layer disposed on the substrate, wherein the device layer comprises a first material;etching the device layer to form a waveguide; 'the waveguide taper region comprises a shoulder portion and a ridge portion, the ridge portion oriented along a direction of beam propagation, the ridge portion having a width that tapers to meet a width of the shoulder portion; and', 'etching the device layer to form a waveguide taper region, wherein the mode converter comprises a plurality of stages;', 'each of the plurality of stages tapers in a direction similar to a direction of taper of the ridge portion of the waveguide taper region; and', 'the mode converter is made of a second material different from the first material., 'forming a mode converter coupled with the waveguide taper region, wherein3. The method claim 2 , wherein the ridge portion of the waveguide taper region is disposed directly above the shoulder portion of the waveguide.4. The method claim 2 , further comprising:applying a photoresist on the device layer;etching the device layer to form a first recess, the first recess having a shape of a ...

Optical transmitter with SBS suppression

An optical transmitter and methods of generating an optical signal having SBS suppression are described. An optical transmitter having SBS suppression according to the present invention includes a signal generator that generates a SBS suppression signal. A laser generates a line width broadened optical signal having AM noise. A signal processor generates a modified SBS suppression signal from the SBS suppression signal. A modulator modulates the line width broadened optical signal having the AM noise with a payload modulation signal and with the modified SBS suppression signal to generate a payload modulated optical signal having SBS suppression and reduced AM noise.

Method and system for performing testing of photonic devices

A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide.

Method and system for performing testing of photonic devices

Integrated waveguide coupler

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

Vertical integration of cmos electronics with photonic devices

A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

Optical transmitter with sbs suppression

An optical transmitter and methods of generating an optical signal having SBS suppression are described. An optical transmitter having SBS suppression according to the present invention includes a signal generator that generates a SBS suppression signal. A laser generates a line width broadened optical signal having AM noise. A signal processor generates a modified SBS suppression signal from the SBS suppression signal. A modulator modulates the line width broadened optical signal having the AM noise with a payload modulation signal and with the modified SBS suppression signal to generate a payload modulated optical signal having SBS suppression and reduced AM noise.

Method and system for hybrid integration of a tunable laser for a cable TV transmitter

A cable television transmitter includes a substrate including a silicon material, control electronics disposed in the substrate, and a gain medium coupled to the substrate. The gain medium includes a compound semiconductor material. The cable television transmitter also includes an optical modulator optically coupled to the gain medium and electrically coupled to the control electronics, a waveguide disposed in the substrate and optically coupled to the gain medium, a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate, and a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate. The cable television transmitter further includes an optical coupler disposed in the substrate and joining the first wavelength selective element, the second wavelength selective element, and the waveguide and an output mirror.

Method and system for template assisted wafer bonding

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

Tunable reflectors based on multi-cavity interference

A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structures further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors.

Integrated waveguide coupler

A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

Systems and methods for photonic polarization rotators

Photonic rotators integrated on a substrate are disclosed for manipulating light polarization.

Method and system for hybrid integration of a tunable laser

Integration of an unprocessed, direct-bandgap chip into a silicon photonic device

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a III-V material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermitically seals the chip in the platform.

Hybrid integrated optical device

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

OPTICAL TRANSMITTER WITH SBS SUPPRESSION

Optischer sender mit sbs-unterdrückung

Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device

A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer; and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.

Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device

A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer; and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.

High-speed optical transmitter with a silicon substrate

A 400 Gb/s transmitter is integrated on a silicon substrate. The transmitter uses four gain chips, sixteen lasers, four modulators to modulate the sixteen lasers at 25 Gb/s, and four multiplexers to produce four optical outputs. Each optical output can transmit at 100 Gb/s to produce a 400 Gb/s transmitter. Other variations are also described.

Electro-absorption modulated laser with high operating temperature tolerance

An electro-absorption modulator and electro-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating though the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.

Electro-absorption modulated laser with high operating temperature tolerance

An electro-absorption modulator and electro-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating though the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.

Monolithically-integrated, polarization-independent circulator

A polarization-independent, optical circulator is formed in silicon photonics. The polarization-independent, optical circulator uses an optical splitter having two couplers and two waveguides joining the two couplers. One of the two waveguides is thinner than the other to create a large effective index difference between TE and TM modes transmitted through the one waveguide. Polarization rotators, including reciprocal and/or non-reciprocal rotators, are further used to create the optical circulator.

Integration of an unprocessed, direct-bandgap chip into a silicon photonic device

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a III-V material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermitically seals the chip in the platform.

Method and system for widely tunable laser

A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.

Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device

A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer, and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.

Integrated photonics mode expander

A method of fabricating a waveguide mode expander includes providing a substrate including a waveguide, bonding a chiplet including multiple optical material layers in a mounting region adjacent an output end of the waveguide, and selectively removing portions of the chiplet to form tapered stages that successively increase in number and lateral size from a proximal end to a distal end of the chiplet. The first optical material layer supports an input mode substantially the same size as a mode exiting the waveguide. One or more of the overlying layers, when combined with the first layer, support a larger, output optical mode size. Each tapered stage of the mode expander is formed of a portion of a respective layer of the chiplet. The first layer and the tapered stages form a waveguide mode expander that expands an optical mode of light traversing the chiplet.

Method and system for the monolithic integration of circuits for monitoring and control of RF signals

A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.

Method and system for heterogeneous substrate bonding for photonic integration

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.