ФОТОПОЛИМЕРНЫЕ КОМПОЗИЦИИ ДЛЯ ЗАПИСИ ОТРАЖАТЕЛЬНЫХ ГОЛОГРАММ В ШИРОКОМ СПЕКТРАЛЬНОМ ДИАПАЗОНЕ

Изобретение относится к области светочувствительных регистрирующих сред, а именно к голографическим фотополимерным материалам, пригодным для регистрации объемных пропускающих и отражательных голограмм. Предложена фотополимерная композиция для получения цветных отражающих и пропускающих голограмм, чувствительная к излучению лазеров во всем видимом диапазоне спектра, содержащая полимерное связующее, мономерный компонент и систему фотоинициирования с акцептором и донором электронов, донором атома водорода и красителем-сенсибилизатором, отличающаяся тем, что содержит в качестве мономера N-акрилоилтиоморфолин, в качестве компонента системы фотоинициирования красителя-сенсибилизатора содержит тиоэритрозин триэтиламмониевый совместно с акцептором электрона, представленным бис(4-трет-бутилфенил)иодонием трифторметансульфоната с добавкой в качестве компонента системы фотоинициирования красителя-сенсибилизатора: 6-ацетиламино-2-метилкерамидонина совместно с донором электрона в виде тетрабутиламмония ...

СВЕТОЧУВСТВИТЕЛЬНАЯ НЕГАТИВНАЯ ПОЛИМЕРНАЯ КОМПОЗИЦИЯ

Изобретение относится к светочувствительным негативным полимерным композициям, подходящим для образования тонкой структуры фотолитографическим способом. Предложена светочувствительная негативная полимерная композиция, содержащая (a) содержащее эпоксидные группы соединение, (b) первую ониевую соль, содержащую структуру катионной части, представленную формулой (b1), и структуру анионной части, представленную формулой (b2), и (c) вторую ониевую соль, содержащую структуру катионной части, представленную формулой (c1), и структуру анионной части, представленную формулой (c2). Предложены также полученная из указанной композиции тонкая структура и способ ее получения, а также жидкостная эжекторная головка, в которой использована упомянутая тонкая структура. Технический результат - предложенная композиция обеспечивает меньшую изменчивость и превосходную воспроизводимость трехмерной формы при использовании фотолитографического процесса. 4 н. и 7 з.п. ф-лы, 5 ил., 1 табл., 12 пр.

Пригодные для печати композиции, включающие высоковязкие компоненты, и способы создания 3D изделий из этих композиций

Настоящее изобретение относится к способу создания трехмерного объекта, пригодной для печати композиции и к стереолитографическому устройству. Указанный способ включает стадии, на которых а) обеспечивают пригодную для печати композицию; b) селективно отверждают пригодную для печати композицию с образованием изделия, представляющего форму трехмерного объекта; с) удаляют значительное количество временного растворителя из изделия; и d) необязательно отверждают незаполимеризованный полимеризуемый компонент, оставшийся до или после стадии с). Пригодная для печати композиция содержит полимеризуемый высоковязкий компонент, содержащий по меньшей мере одну этиленненасыщенную связь, 5-30 мас.% временного растворителя и инициатор. Вязкость полимеризуемого высоковязкого компонента составляет по меньшей мере 20000 сП при 25°С перед смешиванием с временным растворителем. Временный растворитель выбирают из нереакционноспособного органического растворителя, имеющего температуру кипения по меньшей мере ...

SULFONSAEUREESTER VON 2,4,6-TRIS-(2-HYDROXY-ETHOXY)-(1,3,5)TRIAZIN, EIN DAMIT HERGESTELLTES POSITIV ARBEITENDES STRAHLUNGSEMPFINDLICHES GEMISCH UND AUFZEICHNUNGSMATERIAL

Positiv-photoresistzusammensetzung

Negativ arbeitende fotoempfindliche Zusammensetzungen

Borate mit Kationen aus der Gruppe von Onium oder organometallischen Komplexen, als kationische Polymerisationsinitiatoren

Positiv arbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefmustern

Sulfonamid-enthaltende Fotoresist-Zusammensetzungen und Verfahren zur Verwendung

Positiv-Fotoresist-Zusammensetzung, umfassend ein Polymer, einen Fotosäuregenerator (PAG) und ein Lösungsmittel, wobei der PAG Sulfonate, Oniumsalze, aromatische Diazoniumsalze, Sulfoniumsalze, Diaryliodoniumsalze und Sulfonsäureester von N-Hydroxyamiden oder N-Hydroxyimiden umfasst, wobei das Polymer eine erste Wiederholungseinheit, die eine Sulfonamidgruppe und eine verzweigte Verknüpfungsgruppe aufweist, gemäß Formel (XII) umfasst,und eine zweite Wiederholungseinheit, die eine mit einer säurelabilen Schutzgruppe geschützte saure Gruppe enthält, umfasst, wobei:R28unabhängig ausgewählt ist aus der Gruppe bestehend aus Wasserstoff, Fluor, Methyl und Trifluormethyl; undR29fluoriertes C1-C12-Alkyl ist.

Sulfonamid-enthaltende Deckschicht- und Fotoresist-Zusatzstoff-Zusammensetzungen und Verfahren zur Verwendung

Zusammensetzung, umfassend ein Polymer mit Wiederholungseinheiten, umfassend eine Sulfonamidgruppe und eine verzweigte Verknüpfungsgruppe, ausgewählt aus der Gruppe bestehend aus den Formeln (III), (IV), (V), (VII), (VIII) und (IX):wobei:R10, R12, R14, R18, R20und R22unabhängig ausgewählt sind aus der Gruppe bestehend aus Wasserstoff, Fluor, Methyl und Trifluormethyl; undR11, R13, R15, R19, R21und R23unabhängig fluoriertes C1-C12-Alkyl sind.

POSITIV ARBEITENDES STRAHLUNGSEMPFINDLICHES GEMISCH

Strahlungsempfindliche Kunststoffzusammensetzung

Flachdruck-Vorlagenplatte

IMPROVED AQUEOUS PROCESSABLE, POSITIVE-WORKING PHOTOPOLYMER COMPOSITIONS

Acrylsäure- oder Methacrylsäurederivate und von diesen erhaltenen Polymere

Rapid development or production of semiconductor chips with an acid scavenger present is effected using lithographic simulation test runs to determine production parameters and product properties

Development or production of semiconductor chips is effected using lithographic simulation test series for the chemical reaction of an acid scavenger in presence of the catalytic acid to enable computation of specified production parameters and product properties. Development or production of semiconductor chips involving creation the chip layer-specific photomask layout and computer-aided simulated development of the chip layer-specific lithographic process with optimization of the exposure, masking and lithographic processes is effected using lithographic simulation test series for the chemical reaction of an acid scavenger in presence of the catalytic acid to enable computation of production parameters and product properties, namely (A) spatial acid distribution; (B) instantaneous product concentration in the reaction of the product with reactants which are in or around the resist; (C) a spatial inhibitor matrix for the freely available acid with reactive groups of a polymer (inhibitor ...

Strahlungsempfindliches Material

Chemisch verstärkte Resist-Zusammensetzungen und Verfahren zur Herstellung von Resist-Mustern

VERFAHREN ZUR HERSTELLUNG VON MONOSULFONIUMSALZEN, KATIONISCHE POLYMERISIERUNGSINITIATOREN, VERNETZB

THIOLVERBINDUNG UND LICHTEMPFINDLICHE ZUSAMMENSETZUNG, DIE DIESE ENTHÄLT

Neue Sulfoniumverbindung, diese enthaltende lichtempfindliche Zusammensetzung und Strukturbildungsverfahren unter Verwendung der lichtempfindlichen Zusammensetzung

Deckschichtzusammensetzung, Alkali-entwicklerlösliche Deckschichtfolie mit der Zusammensetzung und Musterbildungsverfahren mit Hilfe damit

Polymere mit O-substituierter Vinylphenoleinheit und sie enthaltende Resistzusammensetzungen

Ein Polymer mit O-substituierter Vinylphenol-Einheit der Formel (I) DOLLAR F1 in der R·1·, R·2· und R·3· einen Alkylrest darstellen; oder R·1· und R·2·, R·1· und R·3· oder R·2· und R·3· miteinander verbunden sind und jeweils einen Alkylenrest bilden; oder R·2· eine Methylidingruppe ist, wobei eine Bindung in der Methylidingruppe an R·1·, die andere Bindung an R·3· gebunden ist, und R·1· und R·3· einen Alkylenrest darstellen, und eine das Polymer umfassende Resistzusammensetzung werden bereitgestellt.

Photoresist-Oberflächenschichtzusammensetzung und Verfahren zur Bildung eines feinen Musters und Verwendung derselben

Die vorliegende Erfindung betrifft eine vor Amin-Kontamination schützende Oberflächenschichtzusammensetzung und ein Verfahren zur Bildung eines feinen Musters unter Verwendung derselben. Die vor Amin-Kontamination schützende Oberflächenschichtzusammensetzung der vorliegenden Erfindung umfaßt vorzugsweise eine vor Amin-Kontamination schützende Verbindung. Einsetzbare vor Amin-Kontamination schützende Verbindungen beinhalten Aminderivate, einschließlich Aminosäurederivaten, Amidderivate, Urethanverbindungen, einschließlich Harnstoff, Salze hiervon und Gemische hiervon. Die vor Amin-Kontamination schützende Oberflächenschichtzusammensetzung der vorliegenden Erfindung vermindert oder verhindert Probleme, wie beispielsweise Ausbildung einer T-Form (T-topping) aufgrund eines Nachbelichtungsverzögerungseffekts und Schwierigkeiten bei der Bildung eines feinen Musters unter 100 nm aufgrund von Säurediffusion, die bei herkömmlichen Lithographieverfahren auftritt, beinhaltend ein Photoresistpolymer ...

LICHTEMPFINDLICHES PHOTOGRAPHISCHES MATERIAL

Verfahren zur Strukturierung einer Photolackschicht

Beschrieben wird ein Verfahren zum Strukturieren einer Photolackschicht, das die folgenden Schritte umfasst: Ein Substrat wird bereitgestellt, auf dem zumindest in Teilbereichen eine Photolackschicht aufgebracht ist. Die Photolackschicht umfasst ein filmbildendes Polymer, das Molekülgruppen aufweist, die durch sauer katalysierte Abspaltungsreaktionen in alkalilösliche Gruppen überführt werden können. Weiterhin umfasst das Polymer einen Photosäuregenerator, der bei Bestrahlung mit Licht aus einem definierten Wellenlängenbereich eine Säure freisetzt. Daneben umfasst das Polymer einen Thermobasengenerator, der bei Temperaturerhöhung eine Base freisetzt. Die Photolackschicht wird zunächst in Teilbereichen mit Licht aus dem definierten Wellenlängenbereich bestrahlt. Anschließend wird die Photolackschicht auf eine Temperatur erhitzt, bei der die durch die photolytisch erzeugte Säure katalysierte Abspaltungsreaktion erfolgt und thermisch durch den Thermobasengenerator eine Base freigesetzt wird ...

Chemical amplification type resist composition

Topcoat composition comprising a polymer containing a repeat unit including a sulfonamide function, photoresist composition containing the same and methods of

Photosensitive polymer compound and photoresist composition containing the same

A photosensitive polymer is disclosed of formula: wherein R is hydrogen or methyl, R* small Greek eta * is an C 6-20 alicyclic aliphatic hydrocarbon group, R* small Greek omega * is t-butyl or tetrahydropyranyl and A photoresist composition is also disclosed comprising the polymer (II) with a photacid generator. The polymer (II) has high optical transparency at shorter wavelength, a strong etch resistance and excellent adhesiveness. Preferably R 2 is cyclohexyl or alkyltricyclodecanyl.

Photoresist polycarbonates and photoresist compositions containing the same

The present invention discloses a photoresist polymer of following formula 1, and a photoresist composition comprising the same: where AC1, AC2, x and y are alicyclic groups defined herein. The photoresist composition has excellent transparency in deep ultraviolet region, etching resistance and heat resistance, and can form a good pattern without a developing step. Accordingly, the photoresist composition can be applied to a high density minute pattern below 0.15žm (e.g., for fabrication of DRAM over 1G), and efficiently employed for the lithography process using ArF, KrF, VUV, EUV, E-beam and X-ray.

Composition of epoxy group-containing cycloolefin resin

Photoresist polymer

The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: [Formula 1] wherein, R is C 1 - C 10 primary or secondary alcohol group; m and n independently represent a number from 1 to 3; and the ratio a:b:c is (10-80)mol%: (10-80)mol%: (10-80)mol%, respectively. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4G or 16G DRAM semiconductor devices using a light source such as ArF, an E-beam, EUV, or an ion-beam.

Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same

A cross-linking monomer represented by the following Chemical Formula 1, process for preparing a photoresist polymer using the same, and said photoresist polymer: ```wherein, R' and R'' individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group ...

Organic polymer for organic anti reflective coating layer and preparation thereof

SPEED STABILISED POSITIVE-ACTING PHOTORESIST COMPOSITIONS

PHOTOSENSITIVE COMPOSITION

Dissolution inhibitor of chemically amplified photoresist and chemically amplified photoresist composition containing the same

Copolymers of substituted norbornenes for photo resists

A copolymer suitable for use as a photo resist for making semiconductor elements, is characterised by having units derived from mono-methyl cis-5-norbornene-endo-2,3-dicarboxylate monomer together with units derived from maleic anhydride and two different monocarboxylate substituted norbornenes, and is represented by the formula: wherein R is t-butyl, hydropyranyl hydrofuranyl , or ethoxyethyl. The polymer has a MW of 3000 - 100,000 and may be prepared by polymerising the monomeric constituents using a free-radical catalyst. The inclusion of a dicarboxylated norbornene derivative reduces the offensive odour produced by the essential monocarboxlyated components.

Process for forming photoresist pattern by top surface imaging process

Organometallic monoacylarylphosphines

Organic polymer for organic anti reflective coating layer and preparation thereof

Method of making a photopolymer plate

Photosensitive bodies

Photosensitive bodies that are sensitive to ultraviolet radiation and that exhibit excellent contrast are formed from base soluble polymers such as poly(methyl methacrylate-co-methacrylic acid) physically mixed with base insoluble materials such as o-nitrobenzyl esters. The base insoluble esters decompose upon irradiation to form base soluble entities in the irradiated regions. These irradiated portions are then soluble in basic solutions that are used to develop the desired image.

Method and photoresist using a photoresist copolymer

OXIMDERIVATE UND IHRE VERWENDUNG ALS LATENTE SÄUREN

COLOR FILTER

RADIATION-SENSITIVE COPOLYMERS, PHOTO RESIST COMPOSITIONS AND TWO-LAYER RESIST SYSTEMS FOR THE DEPTHS UV RANGE

TYPE OF NEGATIVE PICTURE RECORDING MATERIAL AND PREKURSOR FOR TYPE OF NEGATIVE LITHOGRAPHIC PRESSURE PLATE

PHOTO-ACTIVATE-CASH NITROGEN BASES

DATA MEMORY MEDIUM THE ONE COLLOIDAL METAL CONTAINS AND PROCEDURES FOR THE PRODUCTION

PHOTORESIST COMPOSITION FOR THE EXPOSURE WITH DUV RADIATION

ORGANIC ANTI-REFLEX COATING COMPOSITIONS FOR THE ADVANCED MICROLITHOGRAPHY

HETEROZYKLENHALTIGES ONIUMSALZ

SULFONIUMSALZE AS PHOTO INITIATORS

ORGANIC PIGMENTS FOR COLOR FILTERS

PHOTO RESIST COMPOSITION, WHICH CONTAINS A DISSOLUTION MODIFICATION MEANS WITH LOW ACTIVATION ENERGY

HIGH-MOLECULAR CONNECTION, ACID GENERATOR, POSITIVE RESIST COMPOSITIONS AND PROCEDURE FOR THE PRODUCTION OF RESIST PATTERNS

SULFONIUMSALZE AS PHOTO INITIATORS FOR RADIATION-HARDENABLE SYSTEMS

ACID AMPLIFIER WITH GROUP OF ACETALS, PHOTO LACQUER COMPOSITION THEREBY AND METHOD FOR THE PRODUCTION OF PHOTO LACQUER STRUCTURES

OXIMSULFONSÄUREESTER UND DEREN VERWENDUNG ALS LATENTE SULFONSÄUREN

CHEMICALLY RESIST COMPOSITION AND STRUCTURING PROCEDURE THEREBY STRENGTHENED POSITIVES

POLYMERIZE-CASH CONNECTION, LACTONHALTIGE CONNECTION, PROCEDURE FOR THE PRODUCTION OF THE LACTONHALTIGEN CONNECTION AND BY POLYMERIZING THE POLYMERIZE-CASH CONNECTION PRESERVATION POLYMER CONNECTION

PRODUCTION OF PHOTORESIST COATINGS

USE POSITIVES OF A RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY, POSITIVES RESIST COMPOSITION AND IMMERSION-LITHOGRAPHIC STRUCTURING METHOD WITH USE DERSELBIGEN

POLYCYCLI RESIST COMPOSITIONS WITH IMPROVED CORRODING STABILITY

SULFONIUMSALZ FOTOINITIATOREN

HYBRID ONIUMSALZ

IMPROVED FUSION COMPOSITIONS

RADIATION-SENSITIVE MIXTURE ON BASIS OF ACID-FISSILE CONNECTIONS.

PHOTO-SENSITIVE COMPOSITIONS FOR SEVERAL TIMES PROPELLANT-ABLE LAYERS.

IODONIUMSALZE AS LATENT ONES ACID DONORS

POLYMERIZE-CASH COMPOSITIONS, FROM IT MANUFACTURED COATINGS AND OTHER POLYMERIZED PRODUCTS.

POLYCYCLI DERIVATIVES TO THE CHANGE OF THE OPTICAL CHARACTERISTICS AND ÄTZBESTÄNDIGKEITSEIGNENSCHAFTEN

PROCEDURE FOR PRODUCING A PICTURE USING AN ANTI-REFLEX LOWER LAYER COMPOSITION

PHOTORESIST COMPOSITIONS WITH POLYCYCLI POLYMERS WITH ACID-UNSTABLE GROUPS AT THE END

STABILIZATION OF LIQUID OF RADIATION-HARDENABLE COMPOSITIONS AGAINST UNWANTED PREMATURE POLYMERIZATION

ALKYLSULFONYLOXIME FOR I-LINE-PHOTORESIST OF HIGH RESOLUTION AND SENSITIVITY

POLYMER COMPOSITION AND REZISTMATERIAL

OSMOTIC DEVICE WITH STEAM-PERMEABLE COATING

PRODUCTION OF CO AND TERPOLYMEREN OF p HYDROXYSTYROL AND ALKYL ACRYLATES

Photo-sensitive material for the production of reproductions

COLOR FILTER

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Iodonium salts as latent acid donors

RADIATION SENSITIVE MIXTURE AND PRODUCTION OF RELIEF IMAGES

RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN USING SAME

Novel polymers and photoresist compositions for short wavelength imaging

Self-aligned permanent on-chip interconnect structure formed by pitch splitting

A method of fabricating an interconnect structure is provided. The method includes forming a hybrid photo-patternable dielectric material atop a substrate. The hybrid photo-patternable dielectric material has dual-tone properties with a parabola like dissolution response to radiation. The hybrid photo-patternable dielectric material is then image-wise exposed to radiation such that a self-aligned pitch split pattern forms. A portion of the self-aligned split pattern is removed to provide a patterned hybrid photo-patternable dielectric material having at least one opening therein. The patterned hybrid photo-patternable dielectric material is then converted into a cured and patterned dielectric material having the at least one opening therein. The at least one opening within the cured and patterned dielectric material is then filed with at least an electrically conductive material. Also provided are a hybrid photo-patternable dielectric composition and an interconnect structure.

Nitrogen-containing organic compound, chemically amplified positive resist composition, and patterning process

An aralkylcarbamate of imidazole base is effective as the quencher. In a chemically amplified positive resist composition comprising the carbamate, deprotection reaction of carbamate takes place by reacting with the acid generated upon exposure to high-energy radiation, whereby the composition changes its basicity before and after exposure, resulting in a pattern profile with advantages including high resolution, rectangular shape, and minimized dark-bright difference.

Resin, resist composition and method for producing resist pattern

A resin having a structural unit derived from a compound represented by the following formula (I), wherein R 1 , A 1 and ring X 1 are as defined in the instant specification:

Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography

A copolymer for positive type lithography, having at least a recurring unit (A) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (A) [in the formula (A), R 10 is a hydrogen atom or a hydrocarbon group which may be substituted by fluorine atom; R 11 is a crosslinked, alicyclic hydrocarbon group; n is an integer of 0 or 1; and R 12 is an acid-dissociating, dissolution-suppressing group], and a terminal structure (B) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (B) [in the formula (B), R 21 is a hydrocarbon group which may contain nitrogen atom; R 22 is an acid-dissociating, dissolution-suppressing group; and p is a site of bonding with copolymer main chain].

Resist composition, resist film therefrom and method of forming pattern therewith

Provided is a resist composition, including (A) a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer, (B) a compound that when exposed to actinic rays or radiation, generates an acid, the compound being any of those of general formulae (I) and (II) below, (C) a resin containing at least either a fluorine atom or a silicon atom, and (D) a mixed solvent containing a first solvent and a second solvent, at least either the first solvent or the second solvent exhibiting a normal boiling point of 200° C. or higher.

Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern

Provided is an actinic-ray- or radiation-sensitive resin composition, including a resin comprising a repeating unit (A), the a repeating unit (A) containing a structural moiety (S1) that when acted on by an acid, is decomposed to thereby generate an alkali-soluble group and a structural moiety (S2) that when acted on by an alkali developer, is decomposed to thereby increase its rate of dissolution in the alkali developer, and a repeating unit (B) that when exposed to actinic rays or radiation, generates an acid.

Radiation-sensitive resin composition, polymer and compound

[Problem] To reduce the time required for a film to exhibit decreased hydrophobicity after liquid immersion lithography while allowing the surface of a film to exhibit high hydrophobicity during liquid immersion lithography. [Solution] A radiation-sensitive resin composition including (A) a polymer that includes a repeating unit (a1) and a fluorine atom, and (B) a photoacid generator, the repeating unit (a1) including a group shown by any of the following formulas (1-1) to (1-3).

Pattern forming process

A resist pattern is formed by coating a first positive resist composition comprising a polymer comprising 20-100 mol % of aromatic group-containing recurring units and adapted to turn alkali soluble under the action of an acid onto a substrate to form a first resist film, coating a second positive resist composition comprising a C 3 -C 8 alkyl alcohol solvent which does not dissolve the first resist film on the first resist film to form a second resist film, exposing, baking, and developing the first and second resist films simultaneously with a developer.

Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin

A resist composition for immersion exposure including: a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid; an acid-generator component (B) which generates acid upon exposure; and a fluorine-containing resin component (F); dissolved in an organic solvent (S), the fluorine-containing resin component (F) including a structural unit (f1) containing a fluorine atom, a structural unit (f2) containing a hydrophilic group-containing aliphatic hydrocarbon group, and a structural unit (f3) derived from an acrylate ester containing a tertiary alkyl group-containing group or an alkoxyalkyl group.

Compositions comprising base-reactive component and processes for photolithography

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Photocurable resin composition

Provided is a photocurable resin composition, which has sensitivity equal to or greater than existing compositions, has alkali development properties, and which produces a cured product that does not become brittle with changes in temperature, and which also has excellent reliability in terms of water resistance, electrical insulating properties, PCT resistance, and the like. The photocurable resin composition comprises a carboxyl group-containing resin, a photopolymerization initiator, a vinyl group-containing elastomer, and a styryl group-containing compound.

Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method

A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl (meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER.

Photosensitive copolymer and photoresist composition

A copolymer has formula: wherein R 1 -R 5 are independently H, C 1-6 alkyl, or C 4-6 aryl, R 6 is a fluorinated or non-fluorinated C 5-30 acid decomposable group; each Ar is a monocyclic, polycyclic, or fused polycyclic C 6-20 aryl group; each R 7 and R 8 is —OR 11 or —C(CF 3 ) 2 OR 11 where each R 11 is H, a fluorinated or non-fluorinated C 5-30 acid decomposable group, or a combination; each R 9 is independently F, a C 1-10 alkyl, C 1-10 fluoroalkyl, C 1-10 alkoxy, or a C 1-10 fluoroalkoxy group; R 10 is a cation-bound C 10-40 photoacid generator-containing group, mole fractions a, b, and d are 0 to 0.80, c is 0.01 to 0.80, e is 0 to 0.50 provided where a, b, and d are 0, e is greater than 0, the sum a+b+c+d+e is 1, l and m are integers of 1 to 4, and n is an integer of 0 to 5. A photoresist and coated substrate, each include the copolymer.

Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern

A cyclic compound represented by formula (1): wherein L, R 1 , R′, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Cyclic compound, process for preparation thereof, radiation-sensitive composition, and method for formation of resist pattern

A cyclic compound represented by formula (1): wherein L, R 1 , R′, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Polymerizable composition, color filter, and method of producing the same, solid-state imaging device, and planographic printing plate precursor, and novel compound

Disclosed is a photopolymerizable composition which contains a photopolymerization initiator (A) that has a partial structure represented by the following Formula (1) and a polymerizable compound (B). In General formula (1), R 3 and R 4 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group or an alkoxy group; R 3 and R 4 may form a ring with each other; and X represents OR 5 , SR 6 , or NR 17 R 18 . The photopolymerizable composition is capable of forming a cured film that has high sensitivity, excellent intra-membrane curability and excellent adhesion to a support. The cured film is able to maintain a patterned shape even during post-heating after development and has good pattern formability, while coloring due to heating with passage of time being suppressed.

Colored curable composition, color filter, and method for producing color filter

A colored curable composition for a solid-state image sensor comprises a polyhalogenated zinc phthalocyanine pigment, and a compound having at least a structure represented by the following Formula (A). In Formula (A), X 1 , X 2 , X 3 , X 4 , X 5 , and X 6 each independently represent a substituent selected from —OH, —OR, or —NHCOCH═CH 2 , R represents a monovalent organic group. When the compound is an oligomer, the oligomer has a configuration in which at least one of X 1 , X 2 , X 3 , X 4 , X 5 , and X 6 in a structure represented by Formula (A) is eliminated to form a single bond, which is then linked, via —O—, to another structure represented by Formula (A).

Resist pattern forming process

A resist pattern is formed by coating a chemically amplified positive resist composition onto a substrate and prebaking to form a resist film, exposing to high-energy radiation, baking and developing with a developer to form a resist pattern, and heating the pattern for profile correction to such an extent that the line width may not undergo a change of at least 10%. An amount of a softening accelerator having a molecular weight of up to 800 is added to the resist composition comprising (A) a base resin, (B) an acid generator, (C) a nitrogen-containing compound, and (D) an organic solvent.

Chemically amplified positive resist composition, patterning process, and acid-decomposable keto ester compound

A chemically amplified positive resist composition comprises an acid-decomposable keto ester compound of steroid skeleton which is insoluble in alkaline developer, but turns soluble in alkaline developer under the action of acid. The composition is exposed to EB, deep-UV or EUV and developed to form a pattern with a high resolution and improved LER.

Radiation-sensitive resin composition

A radiation-sensitive resin composition includes an acid-labile group-containing polymer and photoacid generator. The radiation-sensitive resin composition is used to form a resist pattern using a developer that includes an organic solvent in an amount of 80 mass % or more. The radiation-sensitive resin composition has a contrast value γ of 5.0 to 30.0. The contrast value γ is calculated from a resist dissolution contrast curve obtained when developing the radiation-sensitive resin composition using the organic solvent.

Self-aligned permanent on-chip interconnect structure formed by pitch splitting

A hybrid photo-patternable dielectric material is provided that has dual-tone properties with a parabola like dissolution response to radiation. In one embodiment, the hybrid photo-patternable dielectric material includes a composition of at least one positive-tone component including a positive-tone polymer, positive-tone copolymer, or blends of positive-tone polymers and/or positive-tone copolymers having one or more acid sensitive positive-tone functional groups; at least one negative-tone component including a negative-tone polymer, negative-tone copolymer, or blends of negative-tone polymers and/or negative-tone copolymers having one or more acid sensitive negative-tone functional groups; at least one photoacid generator; and at least one solvent that is compatible with the positive-tone and negative-tone components.

Resist film, resist coated mask blanks and method of forming resist pattern using the resist film, and chemical amplification type resist composition

A resist film formed by using a chemical amplification type resist composition containing (A) a high molecular compound having a structure wherein a hydrogen atom of a phenolic hydroxyl group is substituted by a group represented by the following general formula (I), (B) a compound generating an acid upon irradiation with actinic rays or radiation, and an organic solvent, and the film thickness is 10 to 200 nm. wherein, R 1 represents a hydrocarbon group, R 2 represents a hydrogen atom or a hydrocarbon group, and Ar represents an aryl group. R 1 may also bind to Ar to form a ring which may also contain a heteroatom. * represents a binding position with an oxygen atom of the phenolic hydroxyl group.

Method and device for a spatially resolved introduction of an intensity pattern comprising electro-magnetic radiation into a photosensitive substance as well as applications thereof

A method for the spatially resolved introduction of an intensity pattern of electro-magnetic radiation by at least one optic display system into a photosensitive substance having properties which can be changed by photon exposure. These properties include a first, liquid and at least one second state, with the electro-magnetic radiation being conducted via the optic display system into the photosensitive substance and here being projected on predetermined spatial coordinates, in order to create at or in an area of these spatial coordinates a change of the properties of the substance. A surface of an objective lens of the optic display system, through which the electro-magnetic radiation 4 is emitted, is immersed in the liquid photosensitive substance 2. A corresponding device is provided, and the device and method can be used for the creation of micro or nano-scaled structures.

Chemically amplified negative resist composition and patterning process

A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.

Resist composition and method for producing resist pattern

A resist composition of the invention includes: (A1) a resin having a structural unit represented by the formula (I), (A2) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and (B) an acid generator represented by the formula (II), wherein R 1 , A 1 , R 2 , Q 1 , Q 2 , L 1 , ring W 1 , and Z + are defined in the specification.

Salt, resist composition and method for producing resist pattern

A salt represented by the formula (I) and a resist composition containing the salt are provided, wherein Q 1 , Q 2 , L 1 , ring W 1 , R e1 , R e2 , R e3 , R e4 , R e5 , R e6 , R e7 , R e8 , R e9 , R e10 , R e11 , R e12 , R e13 and Z are defined in the specification.

Photoresist resin composition and method of forming patterns by using the same

A method for forming a pattern includes forming a photosensitive film by coating a photosensitive resin composition on a substrate, exposing the photosensitive film to light through a mask that includes a light transmission region and a non-light transmission region, coating a developing solution on the photosensitive film, and forming a photosensitive film pattern by baking the photosensitive film, wherein the photosensitive resin composition includes an alkali soluble base resin, a photoacid generator and a photoactive compound.

Patterning process and photoresist with a photodegradable base

A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

Resist composition and method for producing resist pattern

A resist composition includes (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator having a structure to be cleaved by the action of an alkaline developer, and (C) a compound represented by the formula (I), wherein R 1 and R 2 in each occurrence independently represent a C 1 to C 12 hydrocarbon group, a C 1 to C 6 alkoxyl group, a C 2 to C 7 acyl group, a C 2 to C 7 acyloxy group, a C 2 to C 7 alkoxycarbonyl group, a nitro group or a halogen atom; m and n independently represent an integer of 0 to 4.

Method of forming resist pattern and negative tone-development resist composition

A method of forming a resist pattern, the method including: forming a resist film on a substrate using a resist composition containing a base component (A) that exhibits reduced solubility in an organic solvent under the action of acid, an acid generator component (B) that generates acid upon exposure and a fluorine-containing polymeric compound (F), exposing the resist film, and patterning the resist film by negative tone development using a developing solution containing the organic solvent, thereby forming a resist pattern, wherein the base component (A) contains a resin component (A1) containing a structural unit (a1) derived from an acrylate ester, the dissolution rates of (A1) and (F) in the developing solution are each at least 10 nm/s, and the absolute value of the difference in the dissolution rates of (A1) and (F) in the developing solution is not more than 80 nm/s.

Use of rylene derivatives as photosensitizers in solar cells

Use of rylene derivatives I with the following definition of the variables: X together both —COOM; Y a radical -L-NR 1 R 2   (y1) -L-Z—R 3   (y2) the other radical hydrogen; together both hydrogen; R is optionally substituted (het)aryloxy, (het)arylthio; P is —NR 1 R 2 ; B is alkylene; optionally substituted phenylene; combinations thereof; A is —COOM; —SO 3 M; —PO 3 M 2 ; D is optionally substituted phenylene, naphthylene, pyridylene; M is hydrogen; alkali metal cation; [NR 5 ] 4 + ; L is a chemical bond; optionally indirectly bonded, optionally substituted (het)arylene radical; R 1 , R 2 are optionally substituted (cyclo)alkyl, (het)aryl; together optionally substituted ring comprising the nitrogen atom; Z is —O—; —S—; R 3 is optionally substituted alkyl, (het)aryl; R′ is hydrogen; optionally substituted (cyclo)alkyl, (het)aryl; R 5 is hydrogen; optionally substituted alkyl (het)aryl; m is 0, 1, 2; n, p m=0: 0, 2, 4 where: n+p=2, 4, if appropriate 0; m=1: 0, 2, 4 where: n+p=0, 2, 4; m=2: 0, 4, 6 where: n+p=0, 4, 6, or of mixtures thereof as photosensitizers in solar cells.

Method for manufacturing micro-structure and optically patternable sacrificial film-forming composition

A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin.

Sulfonium salt, polymer, chemically amplified resist composition using said polymer, and resist patterning process

There is disclosed a sulfonium salt shown by the following general formula (1). There can be a sulfonium salt capable of introducing an acid-generating unit generating an acid having an appropriate acid strength and not impairing adhesion with a substrate into a base polymer; a polymer using the said sulfonium salt; a chemically amplified resist composition using the said polymer as a base polymer; and a patterning process using the said chemically amplified resist composition.

Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same

An actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) which includes a repeating unit (A) having an ionic structural moiety which generates an acid anion by being decomposed due to irradiation with actinic rays or radiation, a repeating unit (B) having a proton acceptor moiety, and a repeating unit (C) having a group which generates an alkali soluble group by being decomposed by the action of an acid, and the resin (P) has at least one repeating unit which is represented by the general formulae (I) to (III) below as the repeating unit (A) (the reference numerals in the general formulae represent the meaning of the description in the scope of the claims and the specifications).

Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns

Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same

The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same

The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Resist composition and method for producing resist pattern

A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator, wherein R 1 , A 1 , A 13 , A 14 , X 12 , R 3 , R 4 , m′ and n′ are defined in the specification.

Radiation-sensitive resin composition

A radiation-sensitive resin composition includes a polymer and a photoacid generator. The polymer includes a first structural unit shown by a formula (a1), a second structural unit shown by a formula (a2), and a third structural unit having a lactone structure. A content of the first structural unit in the polymer being 50 mol % or more based on total structural units included in the polymer. The first structural unit is preferably a structural unit shown by a formula (a1-1).

Resist composition and method for producing resist pattern

A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator having an acid labile group, wherein R 1 , A 1 , A 13 , A 14 , X 12 are defined in the specification.

CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS

A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.

Positive resist composition and patterning process

There is disclosed a positive resist composition comprising (A) a specific resin (B) a photo acid generator, (C) a basic compound, and (D) a solvent. There can be a positive resist composition having, in a photolithography using a high energy beam such as an ArF excimer laser beam as a light source, an excellent resolution, especially excellent depth of focus (DOF) characteristics with an excellent pattern profile, and in addition, in formation of a contact hole pattern, giving a pattern having excellent circularity and high rectangularity; and a patterning process using this positive resist composition.

Fluorine-Containing Sulfonate, Fluorine-Containing Sulfonate Resin, Resist Composition and Pattern Formation Method

According to the present invention, there is provided a fluorine-containing sulfonate resin having a repeating unit of the following general formula (3). In order to prevent deficiency such as roughness after pattern formation or failure in pattern formation, the fluorine-containing sulfonate resin incorporates therein a photoacid generating function and serves as a resist resin in which “a moiety capable of changing its developer solubility by the action of an acid” and “a moiety having a photoacid generating function” are arranged with regularity.

Patterning process and resist composition

A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of acid labile group-substituted vinyl alcohol and maleic anhydride and/or maleimide, an acid generator, and an organic solvent onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.

Actinic ray-sensitive or radiation-sensitive resin composition, and resist film, pattern forming method, method for preparing electronic device, and electronic device, each using the same

An actinic ray-sensitive or radiation-sensitive resin composition capable of forming a hole pattern which has an ultrafine pore diameter (for example, 60 nm or less) and has an excellent cross-sectional shape with excellent local pattern dimensional uniformity; and a resist film, a pattern forming method, a method for preparing an electronic device, and an electronic device, each using the same, are provided. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin containing 30 mol % or more of a repeating unit (a) represented by the following general formula (I) based on all the repeating units; (B) a compound capable of generating an acid upon irradiation of actinic rays or radiation; and (G) a compound having at least one of a fluorine atom and a silicon atom, and further having basicity or being capable of increasing the basicity by an action of an acid:

Photoresist composition and resist pattern-forming method

A photoresist composition includes a polymer that includes a first structural unit shown by a formula (1), and an acid generator. R 1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R 2 represents a divalent hydrocarbon group having 1 to 10 carbon atoms. A represents —COO—*, —OCO—*, —O—, —S—, or —NH—, wherein “*” indicates a site bonded to R 3 . R 3 represents a single bond or a divalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably further includes a second structural unit that includes an acid-labile group.

Topcoat compositions and photolithographic methods

Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a polymer system that includes a matrix polymer and a surface active polymer. The matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. A solvent system includes a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second organic solvent. The first organic solvent has a higher surface energy than a surface energy of the surface active polymer, and a higher boiling point than a boiling point of the second organic solvent.

Pattern forming method and manufacturing method of semiconductor device

A disclosed manufacturing method of a semiconductor device includes laminating a substrate, an etched film, an anti-reflective coating film, and a resist film; forming a pattern made of the resist film using a photolithographic technique; forming the third mask pattern array by a mask pattern forming method; and a seventh step of forming a fourth mask pattern array by processing the etched film using the third mask pattern array.

Method of producing gallium phthalocyanine crystal and method of producing electrophotographic photosensitive member using the method of producing gallium phthalocyanine crystal

Provided is a method of producing an electrophotographic photosensitive member having improved sensitivity and capable of outputting an image having less image defects due to a ghost phenomenon not only under a normal-temperature, normal-humidity environment but also under a low-temperature, low-humidity environment as a particularly severe condition. The method of producing a gallium phthalocyanine crystal includes subjecting a gallium phthalocyanine and a specific amine compound, which are added to a solvent, to a milling treatment to perform crystal transformation of the gallium phthalocyanine. In addition, the gallium phthalocyanine crystal is used in the photosensitive layer of the electrophotographic photosensitive member.

Positive Photosensitive Resin Composition, Photosensitive Resin Film Prepared by Using the Same, and Semiconductor Device Including the Photosensitive Resin Film

Disclosed are a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a first polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1 and a repeating unit represented by the following Chemical Formula 2, and having a thermally polymerizable functional group at at least one of the terminal end; (B) a dissolution controlling agent including a novolac resin including a repeating unit represented by the following Chemical Formula 4; (C) a photosensitive diazoquinone compound; (D) a silane compound; (E) an acid generator; and (F) a solvent, a photosensitive resin film prepared using the same, and a semiconductor device including the photosensitive resin film.

PHOTOSENSITIVE RESIN COMPOSITION

A photosensitive resin composition including: (a) a polyamide acid; (b) a compound (b1) having 4 or more of a methylol group, a methoxymethyl group and the both thereof, or a compound (b2) represented by the following formula (2); and (c) a photopolymerization initiator. 3. The photosensitive resin composition according to wherein the component (b) is contained in an amount of 2 to 10 parts by mass relative to 100 parts by mass of the component (a).4. The photosensitive resin composition according to which is used for forming a protective layer or an insulating layer of a circuit formation substrate of a suspension of a hard disc drive.5. A cured film obtained by curing the photosensitive resin composition according to .6. A method for producing a cured film comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying the photosensitive resin composition according to to a substrate, followed by drying to obtain a photosensitive resin film;'}exposing the photosensitive resin film to light, followed by developing, to obtain a patterned resin film; andheating the patterned resin film.7. A circuit formation substrate having the cured film obtained by the method according to as an insulating layer or a protective layer.8. The circuit formation substrate according to having a substrate claim 7 , an insulating layer claim 7 , a conductive layer and a protective layer in this sequence.9. A suspension of a hard disc drive having the circuit formation substrate according to . The invention relates to a photosensitive resin composition, a method for producing a cured film using the photosensitive resin composition and a circuit formation substrate having a cured film comprising the photosensitive resin composition.In recent years, in respect of an increase in memory capacity or an increase in processing speed or the like of a hard disc drive, as the magnetic head (hereinafter referred to as the “head”), a MR (magnet-resistive) thin film composite head in ...

Photoresist composition for forming a color filter and display substrate

A photoresist composition for manufacturing a color filter, the photoresist composition includes a first red colorant and a yellow colorant represented by Chemical Formula 1, wherein R 1 and R 2 each independently represent a C1 to C10 alkyl group, wherein A 1 , A 2 , A 3 , and A 4 each independently represent a C1 to C10 alkyl group, —CN, —PO 3 H 2 , —C(O)OH, or a hydrogen atom, m is an integer of 1 to 10, and optionally wherein at least one —CH 2 — of R 1 and R 2 if present is independently replaced with —O—, —C(O)—, —C(O)O—, or —OC(O)—.

Resist composition, method of forming resist pattern, and polymeric compound

A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure. In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R 1 represents a sulfur atom or an oxygen atom, R 2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

Positive photosensitive resin composition and uses thereof

The invention relates to a positive photosensitive resin composition with good temporal stability. The invention also provides a method for manufacturing a thin-film transistor array substrate, a thin-film transistor array substrate and a liquid crystal display device.

Photosensitive Novolac Resin, Positive Photosensitive Resin Composition Including Same, Photosensitive Resin Film Prepared by Using the Same, and Semiconductor Device Including the Photosensitive Resin Film

Disclosed is a photosensitive novolac resin including a structural unit represented by the following Chemical Formula 1 and structural unit represented by the following Chemical Formula 2, wherein R 11 , R 12 , R 13 , and R 14 in Chemical Formulae 1 and 2 are the same as defined in the detailed description, a positive photosensitive resin composition including the same, a photosensitive resin film fabricated using the same, and a semiconductor device including the photosensitive resin composition.

Resist underlayer film composition, method for producing polymer for resist underlayer film, and patterning process using the resist underlayer film composition

A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of a condensed body, the body being obtained by condensation of one or more kinds of a compound shown by the following general formula (1-1) with one or more kinds of a compound shown by the following general formula (2-3) and an equivalent body thereof, with one or more kinds of a compound shown by the following general formula (2-1), a compound shown by the following general formula (2-2), and an equivalent body thereof; a method for producing a polymer for a resist underlayer film; and a patterning process using the same.

Method of forming resist pattern

A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.

Chemically amplified negative resist composition and pattern forming process

A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.

Photopolymer formulation for producing holographic media having highly crosslinked matrix polymers

The invention relates to a photopolymer formulation comprising a polyol component, a polyisocyanate component, a writing monomer, and a photoinitiator, containing a coinitiator and a dye having the formula F An, where F stands for a cationic dye and An″ stands for an anion, wherein the dye having the formula F An comprises a water absorption of =5%. The invention further relates to a holographic medium, in particular in the form of a film, containing a photopolymer formulation according to the invention, to the use of such a medium for recording holograms, and to a special dye that can be used in the photopolymer formulation according to the invention.

Acid generator, chemically amplified resist composition, and patterning process

The present invention provides an acid generator generates a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat: To provide a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of LER and a depth of focus and can be effectively and widely used particularly without degradation of a resolution, a chemically amplified resist composition using the same, and a patterning process.

Resist composition and method of forming resist pattern

A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound (C) represented by general formula (c1) shown below. In the formula, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R 1 represents a divalent linking group; R 2 represents an arylene group which may have a substituent, and each of R 3 and R 4 independently represents an aryl group which may have a substituent; R 3 and R 4 may be mutually bonded with the sulfur atom to form a ring; R 5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.

Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process

A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C 1 -C 20 alkyl group which may be substituted with halogen or separated by oxygen or carbonyl, and Z is a divalent organic group which forms a ring with alkylenoxy and contains a polymerizable unsaturated group. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water sliding property, lipophilicity, acid lability and hydrolyzability and is useful in formulating a protective coating composition and a resist composition.

Radiation-sensitive resin composition, method for forming resist pattern, organic acid and acid generating agent

A radiation-sensitive resin composition includes an acid generating agent to generate an organic acid by irradiation with a radioactive ray. The organic acid has a cyclic hydrocarbon group and an organic group including a bond that is cleavable by an acid or a base to produce a polar group. The organic acid is preferably represented by a following formula (I). Z represents an organic acid group. R 1 represents an alkanediyl group, wherein a part or all of hydrogen atoms of the alkanediyl group represented by R 1 are optionally substituted by a fluorine atom. X represents a single bond, O, OCO, COO, CO, SO 3 or SO 2 . R 2 represents a cyclic hydrocarbon group. R 3 represents a monovalent organic group having a functional group represented by a following formula (x). n is an integer of 1 to 3. Z—R 1 —X—R 2 —(R 3 ) n   (I) —R 31 -G-R 13   (x)

Resist composition, method of forming resist pattern and polymeric compound

A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein R 1 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; W represents —COO—, —CONH— or a divalent aromatic hydrocarbon group; Y 1 and Y 2 represents a divalent linking group or a single bond; represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R′ 2 represents a monovalent aliphatic hydrocarbon group; and R 2 represents an —SO 2 — containing cyclic group).

Photocurable resin composition, dry film, cured product and printed wiring board

[Problems] The present invention provides a photocurable resin composition having excellent adhesion with a substrate and excellent resolution; a film obtained by using the photocurable resin composition; a cured product obtained by curing the photocurable resin composition; and a printed wiring board comprising the cured product. [Means for Solution] The photocurable resin composition according to the present invention is characterized by comprising (A) a carboxyl group-containing resin, (B) an acylphosphine oxide-based photopolymerization initiator, (C) a titanocene-based photopolymerization initiator, (D) a photosensitive monomer and (E) a polymerization inhibitor.

Photoresist composition and resist pattern-forming method

A photoresist composition includes a polymer component that includes a first structural unit represented by the formula (1) and a second structural unit represented by the formula (2), an acid generator, and a compound represented by the formula (3). The first structural unit and the second structural unit are included in an identical polymer, or different polymers. R 1 is hydrogen atom, fluorine atom, etc., R 2 and R 3 are independently hydrogen atom, fluorine atom, etc., a is an integer from 1 to 6, R 4 and R 5 independently hydrogen atom, fluorine atom, etc., R 6 is hydrogen atom, fluorine atom, etc., R 7 and R 8 are each independently alkyl group having 1 to 4 carbon atoms, etc., R 9 is alkyl group having 1 to 4 carbon atoms, etc., R 10 is hydrogen atom, etc., A − is —N − —SO 2 —R a , etc., and X + is onium cation.

RADIATION-SENSITIVE RESIN COMPOSITION, AND RADIATION-SENSITIVE ACID GENERATING AGENT

A radiation-sensitive resin composition includes a compound represented by a formula (1), and a base polymer. In the formula (1), Ris a group represented by a formula (a1), and M represents a radiation-degradable monovalent cation. In the formula (a1), Rrepresents a substituted or unsubstituted chain hydrocarbon group having 1 to 30 carbon atoms, or the like. Rrepresents a substituted or unsubstituted divalent hydrocarbon group having 1 to 30 carbon atoms, or the like. Rrepresents —CO—, or the like. Rrepresents —CO—, or the like. m is an integer of 0 to 2. n is an integer of 0 to 1. A site denoted by * is a binding site with —O— in the formula (1). 2. The radiation-sensitive resin composition according to claim 1 , wherein M in the formula (1) represents a sulfonium cation or an iodonium cation. The present application is a continuation application of International Application No. PCT/JP2012/050290, filed Jan. 10, 2012, which claims priority to Japanese Patent Application No. 2011-002627, filed Jan. 11, 2011, and to Japanese Patent Application No. 2011-213584, filed Sep. 28, 2011. The contents of these applications are incorporated herein by reference in their entirety.1. Field of the InventionThe present invention relates to a radiation-sensitive resin composition, and a radiation-sensitive acid generating agent.2. Discussion of the BackgroundIn the field of microfabrication, etc., typified by manufacturing of integrated circuit elements, lithography techniques have been recently required that enable microfabrication at a level of no greater than about 100 nm in order to achieve higher integrity. Examples of radioactive rays which may be used in such microfabrication include far ultraviolet rays such as a KrF excimer laser, an ArF excimer laser, an Fexcimer laser and an EUV (extreme ultraviolet) ray, X-rays such as a synchrotron radioactive ray, charged particle rays such as an electron beam, and the like. As radiation-sensitive resin compositions suited for such a ...

PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING MATERIAL COMPRISING THE PHOTOSENSITIVE RESIN COMPOSITION, AND PATTERN FORMING METHOD AND ARTICLE USING THE PHOTOSENSITIVE RESIN COMPOSITION

A photosensitive resin composition which is excellent in resolution, low in cost, and usable in a wide range of structures of polymer precursors each of which is reacted into a final product by a basic substance or by heating in the presence of a basic substance. The photosensitive resin composition includes a base generator which has a specific structure and generates a base by exposure to electromagnetic radiation and heating, and a polymer precursor which is reacted into a final product by the base generator and by a basic substance or by heating in the presence of a basic substance. 2. The photosensitive resin composition according to claim 1 , wherein the base thus generated is a secondary amine which has one NH group that is able to form an amide bond and/or a heterocyclic compound.3. The photosensitive resin composition according to claim 1 , wherein at least one of R claim 1 , R claim 1 , Rand Ris halogen claim 1 , a hydroxyl group claim 1 , a nitro group claim 1 , a nitroso group claim 1 , a mercapto group claim 1 , a silyl group claim 1 , a silanol group or a monovalent organic group claim 1 , or two or more of R claim 1 , R claim 1 , Rand Rare bound to form a condensed ring together with a benzene ring to which R claim 1 , R claim 1 , Rand Rare bound.4. The photosensitive resin composition according to claim 1 , wherein the base thus generated has a boiling point of 25° C. or more and a weight loss of 80% or more at 350° C.6. The photosensitive resin composition according to claim 1 , wherein the base generator has absorption at at least one of electromagnetic wavelengths of 365 nm claim 1 , 405 nm and 436 nm.7. The photosensitive resin composition according to claim 1 , wherein the polymer precursor comprises one or more selected from the group consisting of a compound and polymer having an epoxy group claim 1 , isocyanate group claim 1 , oxetane group or thiirane group claim 1 , a polysiloxane precursor claim 1 , a polyimide precursor and a ...

Photoacid generator, photoresist, coated substrate, and method of forming an electronic device

A photoacid generator has the formula (I): wherein R 1 , R 2 , R 3 , L 1 , L 2 , L 3 X, Z + , a, b, c, d, p, q, and r, are defined herein. A photoresist comprises the photoacid generator, and a coated article comprises the photoresist. The photoresist can be used to form an electronic device.

Polymer, positive resist composition and patterning process

A polymer comprising recurring units of butyrolactone (meth)acrylate, recurring units having a carboxyl or phenolic group which is substituted with an acid labile group, and recurring units having a phenol group or an adhesive group in the form of 2,2,2-trifluoro-1-hydroxyethyl is quite effective as a base resin for resist. A positive resist composition comprising the polymer is improved in such properties as a contrast of alkali dissolution rate before and after exposure, acid diffusion suppressing effect, resolution, and profile and edge roughness of a pattern after exposure.

Black resin composition, resin black matrix substrate, and touch panel

Disclosed is a black resin composition with which a black matrix having high insulation properties even after heat treatment at a high temperature and, in addition, achromatic reflection properties can be readily formed. The black resin composition comprises (A) a light-shielding material, (B) an alkali-soluble resin, and (C) an organic solvent, and comprises (A-1) a carbon black and (A-2) titanium nitride compound particles as the light-shielding material (A). The carbon black (A-1) is surface-treated with a sulfur-containing compound, and in the surface composition, the percentage of carbon atoms is 95% or less and the percentage of sulfur atoms is 0.5% or more.

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film

A pattern forming method contains (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a) a repeating unit represented by the specific formula, and (B) a compound capable of generating an organic acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, and (iii) a step of developing the film by using an organic solvent-containing developer to form a negative pattern.

Method of producing ammonium salt compound, method of producing compound, and compound, polymeric compound, acid generator, resist composition and method of forming resist pattern

A method of producing an ammonium salt compound, including reacting a first ammonium salt compound containing a first ammonium cation which is a primary, secondary or tertiary ammonium cation with a nitrogen-containing compound having a lone pair to obtain a second ammonium salt compound which contains a conjugated acid of the nitrogen-containing compound, the conjugated acid of the nitrogen-containing compound having a larger pKa than the pKa of the first ammonium cation; and a method of producing a compound, including a step of salt exchange between the ammonium salt compound obtained by the aforementioned production method and a sulfonium cation or iodonium cation which has a higher hydrophobicity than the hydrophobicity of the conjugated acid of the nitrogen-containing compound.

PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN

A photoresist composition comprising 6. The photoresist composition according to claim 1 , which further comprises a solvent.7. A process for producing a photoresist pattern comprising the following steps (1) to (5):{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(1) a step of applying the photoresist composition according to on a substrate,'}(2) a step of forming a composition film by drying the composition,(3) a step of exposing the composition film to radiation,(4) a step of baking the exposed composition film, and(5) a step of developing the baked composition film, thereby forming a photoresist pattern.11. The photoresist composition according to claim 2 , which further comprises a solvent.12. A process for producing a photoresist pattern comprising the following steps (1) to (5):{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, '(1) a step of applying the photoresist composition according to on a substrate,'}(2) a step of forming a composition film by drying the composition,(3) a step of exposing the composition film to radiation,(4) a step of baking the exposed composition film, and(5) a step of developing the baked composition film, thereby forming a photoresist pattern. This nonprovisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2012-159646 filed in JAPAN on Jul. 18, 2012, the entire contents of which are hereby incorporated by reference.The present invention relates to a photoresist composition and a method for producing a photoresist pattern.As a method for forming a negative photoresist pattern, JP2008-309879A1 mentions a photoresist composition comprising: a resin which increases in its polarity by action of an acid and which shows increased solubility in positive developer and decreased solubility in negative developer by irritation of active light or radiant lay,a compound which generates an acid by irritation of active light or radiant lay, solvent, and a resin which comprises at least one of a fluorine atom ...

ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION

Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) containing an acid-decomposable repeating unit (A), which resin when acted on by an acid, increases its solubility in an alkali developer, a compound (Q) that when exposed to actinic rays or radiation, generates an acid, and a compound (R) expressed by general formula () or () below. 2. The composition according to claim 1 , wherein the organic group is an alkyl group or an aryl group.3. The composition according to claim 1 , wherein the compound (R) is expressed by general formula (1) claim 1 , and wherein at least one of Rand Ris a hydrogen atom.4. The composition according to claim 3 , wherein both of Rand Rare hydrogen atoms.5. The composition according to claim 1 , wherein the compound (R) is expressed by general formula (2) claim 1 , and wherein Ris a hydrogen atom.8. The composition according to claim 7 , wherein the repeating unit (B) has a hydroxystyrene structure.9. The composition according to claim 1 , further comprising a basic compound other than the compound (R).10. The composition according to claim 9 , wherein the basic compound contains no hydroxyl group.11. The composition according to for use in a pattern formation including exposure by EUV.12. An actinic-ray- or radiation-sensitive resin film formed from the composition according to .13. A method of forming a pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00012', 'claim 12'}, 'exposing the film according to to light, and'}developing the exposed film.14. The method according to claim 13 , wherein the exposure is carried out by EUV light.15. A process for manufacturing an electronic device claim 13 , comprising the pattern forming method according to .16. An electronic device manufactured by the process according to . This application is a Continuation Application of PCT Application No. PCT/JP2012/059300, filed Mar. 29, 2012 and based upon and claiming the benefit of priority from prior Japanese ...

PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN

A photoresist composition comprising 2. The photoresist composition according to claim 1 , wherein Rrepresents a C3-C18 unsubstituted alicyclic hydrocarbon group.5. A process for producing a photoresist pattern comprising the following steps (1) to (5):{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(1) a step of applying the photoresist composition according to on a substrate,'}(2) a step of forming a composition film by drying the composition,(3) a step of exposing the composition film to radiation,(4) a step of baking the exposed composition film, and(5) a step of developing the baked composition film, thereby forming a photoresist pattern.7. A process for producing a photoresist pattern comprising the following steps (1) to (5):{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, '(1) a step of applying the photoresist composition according to on a substrate,'}(2) a step of forming a composition film by drying the composition,(3) a step of exposing the composition film to radiation,(4) a step of baking the exposed composition film, and(5) a step of developing the baked composition film, thereby forming a photoresist pattern. This nonprovisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2012-166681 filed in JAPAN on Jul. 27, 2012, the entire contents of which are hereby incorporated by reference.The present invention relates to a photoresist composition and a method for producing a photoresist pattern.As a method for forming a negative photoresist pattern, JP2010-197413A1 mentions a positive type photoresist composition for immersion exposure, which comprises:a fluorine-containing macromolecular compound (F1) which comprises a structural unit having a base-dissociable group and a structural unit represented by the following general formula (f2-1);where R represents a hydrogen atom, a C1-C5 alkyl group, or a C1-C5 halogenated alkyl group, and W represents a polycyclic hydrocarbon-containing group, a base component (A) which ...

LITHOGRAPHY USING PHOTORESIST WITH PHOTOINITIATOR AND PHOTOINHIBITOR

Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a photoinitiator and a photoinhibitor. The photoinitiator may be effective to generate a first reactant upon the absorption of at least one photon of a particular wavelength of light. The first reactant may be effective to render the resin soluble or insoluble in a photoresist developer. The photoinhibitor may be effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light. The second reactant may be effective to inhibit the first reactant. 1. A photoresist comprising:at least one resin;at least one photoinitiator effective to generate a first reactant upon the absorption of at least two photons of a particular wavelength of light from incident light, wherein the first reactant is effective to render the resin soluble or insoluble in a photoresist developer; andat least one photoinhibitor effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light from the incident light, wherein the second reactant is effective to inhibit the first reactant.2. The photoresist of claim 1 , wherein the particular wavelength of light is greater than 193 nm.3. The photoresist of claim 1 , wherein the particular wavelength of light is about 300 nm to about 400 nm.4. The photoresist of claim 1 , wherein the first reactant is an acidic compound and the second reactant is a basic compound.5. The photoresist of claim 1 , wherein:the first reactant is an acidic compound;the second reactant is a basic compound; andthe acidic compound is effective to depolymerize the resin.6. The photoresist of claim 1 , wherein the photoinitiator includes caged benzophenone and diphenyliodonium hexafluorophosphate.7. The photoresist of claim 4 , wherein the acidic compound is hexafluorophosphoric acid. ...

Photoresist composition and method of forming a black matrix using the same

A photoresist composition including: about 5% by weight to about 10% by weight of a binder resin; about 5% by weight to about 10% by weight of a photo-polymerization monomer; about 1% by weight to about 5% by weight of a photo initiator, which is activated by a light having a peak wavelength from about 400 nm to about 410 nm; about 5% by weight to about 10% by weight of a black-coloring agent, each based on a total weight of the photoresist composition; and a solvent.

MAINTENANCE LIQUID

Disclosed is a maintenance liquid for property carrying out imprints excellent in patternability. The maintenance liquid for imprints of an ink-jet discharging device comprises a compound comprising an ester group and/or an ether group. 2. The maintenance liquid according to claim 1 , wherein the compound having an ester group and/or an ether group is a polymerizable monomer.3. The maintenance liquid according to claim 1 , having a viscosity at 25° C. of 50 mPa·s or less.4. The maintenance liquid according to claim 1 , containing a compound having both of an ester functional group and an ether group claim 1 , or containing both of a compound having an ester functional group and a compound having an ether group.5. The maintenance liquid according to claim 1 , having a boiling point at 1 atm of 150° C. or higher.6. The maintenance liquid according to claim 1 , wherein 50% by mass or more of the maintenance liquid is the compound having an ester group and/or an ether group.7. The maintenance liquid according to claim 1 , which consists essentially of the compound having an ester group and/or an ether group and the polymerizable monomer.8. The maintenance liquid according to claim 1 , which consists essentially of the compound having an ester group and/or an ether group and a (meth)acrylate monomer.9. A method of manufacturing the maintenance liquid according to claim 1 , the method including a process of mixing components for composing the maintenance liquid claim 1 , followed by filtration.10. The maintenance liquid according to claim 1 , wherein the compound having an ester group and/or an ether group is different from the polymerizable monomer.11. The maintenance liquid according to claim 1 , wherein the compound having an ester group and/or an ether group is non-polymerizable.12. The maintenance liquid according to claim 1 , wherein the compound having an ester group and/or an ether group is non-polymerizable.13. The maintenance liquid according to claim 1 , ...

Patterning process and resist composition

A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a tertiary ester type acid labile group having a plurality of methyl or ethyl groups on alicycle and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern of dimensional uniformity.

Photoresist Film and Manufacturing Method for Organic Light Emitting Display Device Using the Same

Disclosed is a photoresist film including a light-to-heat conversion layer on a support film, and a thermo-responsive polymer layer on the light-to-heat conversion layer, wherein the photoresist film is easily detached from a transfer substrate through a temperature adjustment and detach film since the photoresist film includes thermo-responsive polymer.

Photoresist and coated substrate comprising same

A polymer includes the polymerized product of monomers including a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a, L 1 , LN, R a , R b , R c , and X are defined herein. The polymer is a useful component of a photoresist composition.

Method of Stabilizing Fluorine-Containing Acid Amplifier

A method of stabilizing a fluorine-containing acid amplifier. The method is provided to include the step of dissolving a fluorine-containing acid amplifier in an organic solvent thereby producing a solution of the fluorine-containing acid amplifier, the fluorine-containing acid amplifier being represented by general formula (1): 4. A method of stabilizing a fluorine-containing acid amplifier claim 1 , as claimed in claim 1 , wherein the organic solvent is at least one kind selected from the group consisting of aliphatic hydrocarbons claim 1 , aromatic hydrocarbons claim 1 , halogenated hydrocarbons claim 1 , alcohols claim 1 , ketones claim 1 , cyclic ketones claim 1 , polyalcohols claim 1 , polyalcohol derivatives claim 1 , cyclic ethers claim 1 , chain ethers claim 1 , esters claim 1 , sulfonyl esters claim 1 , amides claim 1 , aromatic solvents and fluorine-based solvents.5. A method of stabilizing a fluorine-containing acid amplifier claim 1 , as claimed in claim 1 , wherein the fluorine-containing acid amplifier contained in the solution of the fluorine-containing acid amplifier has a concentration of 0.05 to 90 mass %.6. A method of stabilizing a fluorine-containing acid amplifier claim 1 , as claimed in claim 1 , further comprising the step of:adding an additive to the solution of the fluorine-containing acid amplifier.7. A method of stabilizing a fluorine-containing acid amplifier claim 6 , as claimed in claim 6 , wherein the additive is a basic compound or an antioxidant.8. A method of stabilizing a fluorine-containing acid amplifier claim 7 , as claimed in claim 7 , wherein the basic compound is at least one kind selected from the group consisting of primary claim 7 , secondary or tertiary aliphatic amines claim 7 , aromatic amines claim 7 , heterocyclic amines claim 7 , nitrogen-containing compounds having hydroxyphenyl group claim 7 , alcoholic nitrogen-containing compounds and amide derivatives.9. A method of stabilizing a fluorine-containing acid ...

SILOXANE-BASED COMPOUND, PHOTOSENSITIVE COMPOSITION COMPRISING THE SAME AND PHOTOSENSITIVE MATERIAL

The present application relates to a siloxane-based compound, a photosensitive composition including the same, and a photosensitive material. 2. The compound according to claim 1 , wherein R5 claim 1 , R6 claim 1 , R7 claim 1 , and R8 in Formula 1 are the same as or different from each other claim 1 , and each independently an alkylene group having 1 to 3 carbon atoms.3. The compound according to claim 1 , wherein R1 claim 1 , R1′ claim 1 , R1″ claim 1 , R2 claim 1 , R2′ claim 1 , and R2″ in Formula 1 are the same as or different from each other claim 1 , and each independently a methoxy group or an ethoxy group.4. The compound according to claim 1 , wherein R3 and R4 in Formula 1 are the same as or different from each other claim 1 , and each independently an alkyl group having 1 to 3 carbon atoms.5. The compound according to claim 1 , wherein R and R′ in Formula 1 are hydrogen.6. The compound according to claim 1 , wherein n in Formula 1 is an integer from 1 to 3.7. A photosensitive composition comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a) the compound represented by Formula 1 according to ;'}b) a crosslinkable compound comprising two or more unsaturated acrylic bonds;c) an alkali soluble binder resin;d) a photopolymerization initiator; ande) a solvent.8. The photosensitive composition according to claim 7 , wherein R5 claim 7 , R6 claim 7 , R7 claim 7 , and R8 in Formula 1 are the same as or different from each other claim 7 , and each independently an alkylene group having 1 to 3 carbon atoms.9. The photosensitive composition according to claim 7 , wherein R1 claim 7 , R1′ claim 7 , R1″ claim 7 , R2 claim 7 , R2′ claim 7 , and R2″ in Formula 1 are the same as or different from each other claim 7 , and each independently a methoxy group or an ethoxy group.10. The photosensitive composition according to claim 7 , wherein R3 and R4 in Formula 1 are the same as or different from each other claim 7 , and each independently an alkyl group having 1 ...

ONIUM COMPOUNDS AND METHODS OF SYNTHESIS THEREOF

New onium salt compounds and methods for synthesis of such compounds are provided. Preferred methods of the invention include (a) providing an onium salt compound comprising a sulfonate component having an electron withdrawing group; and (b) treating the onium salt compound with a halide salt to form a distinct salt of the onium compound. The present onium compounds are useful as an acid generator component of a photoresist composition. 1. A method for preparing an onium salt compound , comprising:(a) providing an onium salt compound comprising a sulfonate component, wherein the sulfonate component comprises an electron withdrawing group; and(b) treating the onium salt compound with a halide salt to form a distinct salt of the onium compound.2. The method of wherein the one or more electron withdrawing groups comprise one or more halogen atoms.3. The method of wherein the sulfonate component is a triflate.5. The method of wherein one or more of R claim 6 , Rand Rare halogen or halogenated alkyl.6. The method of wherein (i) the onium salt compound is treated with a halide salt to form a halide salt of the onium compound and (ii) the halide salt of the onium compound is further treated to provide the distinct salt of the onium compound.7. A method of preparing a photoresist composition claim 6 , comprising admixing the distinct salt of the onium compound of with a polymer to provide a photoresist composition.8. A photolithographic method comprising: (i) applying a coating layer of a photoresist composition prepared in accordance with on a substrate surface; (ii) exposing the photoresist composition layer to activating radiation; and (iii) developing the exposed photoresist composition layer to provide a resist relief image.9. An onium salt compound claim 7 , obtainable by a method comprising:(a) providing an onium salt comprising a sulfonate component, wherein the sulfonate component an electron withdrawing group;(b) treating the sulfonate salt with a halide salt to ...

ACID GENERATOR COMPOUNDS AND PHOTORESISTS COMPRISING SAME

Acid generator compounds are provided that are particularly useful as a photoresist composition component. Acid generator compounds of the invention comprise 1) a cyclic sulfonium salt and 2) a covalently linked photoacid-labile group. In one aspect, thioxanthone acid generator compounds are particularly preferred, including acid generator compounds that comprise (i) a thioxanthone moiety; and (ii) one or more covalently linked acid labile-groups. 1. A photoresist composition comprising:(a) a polymer; and (i) a thioxanthone moiety; and', '(ii) one or more covalently linked acid labile-groups., '(b) an acid generator comprising6. The photoresist composition of wherein the acid generator compound comprises an acid-labile group of the following Formula (III):{'br': None, 'sub': 'n', 'sup': '3', '—O (CXY)R\u2003\u2003(III)'}{'sup': '3', 'wherein X and Y are independently hydrogen or a non-hydrogen substituent; Ris a non-hydrogen substituent that provides an acid-labile moiety; and n is a positive integer.'}7. The photoresist composition of wherein the acid generator compound exhibits a reduction potential of −0.9 to 0 V (vs. Ag/AgCl claim 1 , cathodic peak potential) in a standard reduction potential assay.8. The photoresist composition of wherein the acid generator compound is covalently bound to a polymer.9. A method for providing a photoresist relief image claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a) applying a coating layer of a photoresist composition of on a substrate; and'}b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating layer.10. The method of wherein the photoresist composition layer is exposed to EUV or e-beam radiation.11. An acid generator compound as described in . The present invention relates to new acid generator compounds that comprise a cyclic sulfonium salt with a covalently linked acid-labile moiety and photoresist compositions that comprise ...

PHOTORESISTS COMPRISING MULTIPLE ACID GENERATOR COMPOUNDS

The present invention relates to new photoresist compositions that comprise (a) a polymer comprising an acid generator bonded thereto; and (b) an acid generator compound that is not bonded to the polymer and that comprises one or more acid-labile groups. 1. A photoresist composition comprising:(a) a polymer comprising an acid generator bonded thereto; and(b) an acid generator compound that is not bonded to the polymer and that comprises one or more acid-labile groups.2. The photoresist composition of wherein the (a) bonded acid generator and/or the (b) acid generator compound comprise a sulfonium moiety and/or an iodonium moiety.3. The photoresist composition of or wherein the (a) bonded acid generator and/or the (b) acid generator compound comprise a thioxanthone moiety.43. The photoresist composition of any one of through wherein the (a) bonded acid generator and/or the (b) acid generator compound comprise a dibenzothiophene moiety.53. The photoresist composition of any one of through wherein the (a) bonded acid generator comprises an anion component covalently bonded to the polymer.65. The photoresist composition of any one of through wherein the (a) bonded acid generator comprises an acid-labile group.76. The photoresist composition of any one of through wherein the acid-labile group of the (b) acid generator compound is on a cation component of the acid generator compound.87. The photoresist composition of any one of through wherein the (b) acid generator compound is present in an amount of from 10 to 50 weight.percent relative to the (a) polymer with bonded acid generator.9. A method for providing a photoresist relief image claims 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claims 1'}, 'b': '8', 'a) applying a coating layer of a photoresist composition of any one of through on a substrate; and'}b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating layer.10. The method of ...

Chemically amplified positive resist composition and pattern forming process

In a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) a thermal crosslinker, and (D) an organic solvent, the base resin is a specific polymer and the crosslinker is a siloxane compound. A coating of the composition is readily developable in aqueous alkaline solution. On heat treatment, it forms a cured resist pattern film of satisfactory profile.

PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATIONS THEREOF

A photosensitive resin composition includes: an alkali-soluble resin; an o-naphthoquinonediazidesulfonic acid ester; a urethane(meth)acrylate compound having at least six (meth)acryloyl groups in a molecule; and a solvent. A protective film which is formed from the photosensitive resin composition and an element which includes the protective film are also provided. 1. A photosensitive resin composition comprising:an alkali-soluble resin;an o-naphthoquinonediazidesulfonic acid ester;a urethane(meth)acrylate compound having at least six (meth)acryloyl groups in a molecule; anda solvent.2. The photosensitive resin composition as claimed in claim 1 , wherein said alkali-soluble resin is obtained by subjecting a mixture to copolymerization claim 1 , said mixture containing at least one carboxyl group-containing compound selected from the group consisting of an unsaturated carboxylic acid compound and an unsaturated carboxylic anhydride compound claim 1 , a first unsaturated compound having an epoxy group claim 1 , and a second unsaturated compound different from said at least one carboxyl group-containing compound and said first unsaturated compound having the epoxy group.3. The photosensitive resin composition as claimed in claim 1 , wherein said o-naphthoquinonediazidesulfonic acid ester is in an amount ranging from 10 to 50 parts by weight claim 1 , said urethane(meth)acrylate compound is in an amount ranging from 1 to 30 parts by weight claim 1 , and said solvent is in an amount ranging from 100 to 800 parts by weight based on 100 parts by weight of said alkali-soluble resin.4. A protective film formed from the photosensitive resin composition as claimed in .5. An element comprising the protective film as claimed in . This application claims priority of Taiwanese Patent Application No. 101135626, filed on Sep. 27, 2012.1. Field of the InventionThe invention relates to a photosensitive resin composition, more particularly to a photosensitive resin composition for ...

PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATIONS THEREOF

A photosensitive resin composition includes: an alkali-soluble resin; an o-naphthoquinonediazidesulfonic acid ester; a silsesquioxane having at least two thiol groups in a molecule; and a solvent. The silsesquioxane is obtained by subjecting to condensation a silane material which includes a thiol-group-containing silane represented by RSi(OR). Rrepresents a C-Corganic group that contains a thiol group and that is free from an aromatic group, or an organic group that contains a thiol group and an aromatic group. Rindependently represents hydrogen, a C-Calkyl group, a C-Cacyl group, or a C-Caromatic group. 1. A photosensitive resin composition comprising:(A) an alkali-soluble resin;(B) an o-naphthoquinonediazidesulfonic acid ester;(c) a silsesquioxane having at least two thiol groups in a molecule; and(D) a solvent; {'br': None, 'sup': a', 'b, 'sub': '3', 'RSi(OR)\u2003\u2003(I),'}, 'wherein said silsesquioxane is obtained by subjecting to condensation a silane material which includes a thiol-group-containing silane represented by formula (I){'sup': a', 'b, 'sub': 1', '8', '1', '6', '1', '6', '6', '15, 'wherein Rrepresents a C-Corganic group that contains a thiol group and that is free from an aromatic group, or an organic group that contains a thiol group and an aromatic group, and Rindependently represents hydrogen, a C-Calkyl group, a C-Cacyl group, or a C-Caromatic group.'}2. The photosensitive resin composition as claimed in claim 1 , wherein said alkali-soluble resin (A) is obtained by subjecting a mixture to copolymerization claim 1 , said mixture containing (a1) at least one of an unsaturated carboxylic acid compound or an unsaturated carboxylic anhydride compound claim 1 , (a2) an unsaturated compound having an epoxy group claim 1 , and (a3) an unsaturated compound different from said unsaturated carboxylic acid compound claim 1 , said unsaturated carboxylic anhydride compound claim 1 , and said unsaturated compound having an epoxy group.3. The ...

PHOTOSENSITIVE RESIN COMPOSITION FOR FORMING BIOCHIP, AND BIOCHIP

It is intended to obtain a photosensitive resin composition that is capable of forming a highly fine pattern with a high aspect ratio while attaining the high adhesion of the pattern to a substrate, having low autofluorescence, and being exceedingly suitable for producing a biochip that causes exceedingly low damage on cultured cells. The photosensitive resin composition for forming a biochip of the present invention contains: an epoxy compound (A1) of a particular structure having an oxycyclohexane skeleton having an epoxy group; an epoxy compound (A2) of a particular structure which is a polyvalent carboxylic acid derivative having an epoxidized cyclohexenyl group; a cationic photoinitiator (B); and a solvent (C). 2. The photosensitive resin composition for forming a biochip according to claim 1 , wherein the ratio between the epoxy compound (A1) and the epoxy compound (A2) contained therein is the former/the latter (weight ratio)=1/99 to 99/1.3. The photosensitive resin composition for forming a biochip according to claim 1 , wherein the cationic photoinitiator (B) is a triarylsulfonium salt.4. The photosensitive resin composition for forming a biochip according to claim 1 , wherein the solvent (C) is at least one solvent selected from the group consisting of ketone-based solvents claim 1 , ester-based solvents claim 1 , and glycol ether-based solvents.5. A dry film resist comprising a base film and a photosensitive resin layer claim 1 , wherein the photosensitive resin layer is formed by applying a photosensitive resin composition for forming a biochip according to on the base film claim 1 , or wherein the photosensitive resin layer is formed by applying a photosensitive resin composition for forming said biochip on the base film and a cover film is layered on the photosensitive resin layer.6. A biochip comprising a first substrate claim 1 , a photosensitive resin layer having a pattern claim 1 , and a second substrate claim 1 ,{'claim-ref': {'@idref': 'CLM- ...

Chemically amplified resist composition and patterning process

A chemically amplified resist composition is provided comprising an acid generator and a quencher comprising a salt compound consisting of a nitrogen-containing cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

ACID GENERATORS AND PHOTORESISTS COMPRISING SAME

Acid generator compounds are provided that are particularly useful as photoresist composition components. Preferred acid generators include cyclic sulfonium compounds that comprise a covalently linked acid-labile group. 1. A photoresist composition comprising:(a) a polymer; and(b) an acid generator that comprises a cation component selected from the group consisting of:(i) 5-(4-(2-(1-ethylcyclopentyloxy)-2-oxoethoxy)-3,5-dimethylphenyl)-5H-dibenzo[b,d]thiophenium; and(ii) 5-(3,5-dimethyl-4-(2-oxo-2-(2-phenylpropan-2-yloxy)ethoxy)phenyl)-5H-dibenzo[b,d]thiophenium.2. The photoresist composition of wherein the acid generator is covalently linked to the polymer.3. The photoresist composition of claim 2 , wherein the acid generator comprises a polymerized unit of a monomer chosen from:(i) 5-(4-(2-(1-ethylcyclopentyloxy)-2-oxoethoxy)-3,5-dimethylphenyl)-5H-dibenzo[b,d]thiophenium 1,1-difluoro-2-(methacryloyloxy)ethanesulfonate; and(ii) 5-(3,5-dimethyl-4-(2-oxo-2-(2-phenylpropan-2-yloxy)ethoxy)phenyl)-5H-dibenzo[b,d]thiophenium 1,1-difluoro-2-(methacryloyloxy)ethanesulfonate.4. A photoresist composition comprising:(a) a polymer; and(b) an acid generator selected from the group consisting of:(i) 5-(4-(2-(1-ethylcyclopentyloxy)-2-oxoethoxy)-3,5-dimethylphenyl)-5H-dibenzo[b,d]thiophenium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate;(ii) 5-(3,5-dimethyl-4-(2-oxo-2-(2-phenylpropan-2-yloxy)ethoxy)phenyl)-5H-dibenzo[b,d]thiophenium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate;(iii) 5-(4-(2-(1-ethylcyclopentyloxy)-2-oxoethoxy)-3,5-dimethylphenyl)-5H-dibenzo[b,d]thiophenium 4-((4R)-4-((8R,9S,10S,13R,14S,17R)-10,13-dimethyl-3,7,12-trioxohexadecahydro-1H-cyclopenta[a]phenanthren-17-yl)pentanoyloxy)-1,1,2,2-tetrafluorobutane-1-sulfonate; and(iv) 5-(3,5-dimethyl-4-(2-oxo-2-(2-phenylpropan-2-yloxy)ethoxy)phenyl)-5H-dibenzo[b,d]thiophenium 44(4R)-44(8R,9S,10S,13R,14S,17R)-10,13-dimethyl-3,7,12-trioxohexadecahydro-1H-cyclopenta[a]phenanthren-17- ...

Cyclic sulfonate compounds as photoacid generators in resist applications

Novel photoacid generator compounds are provided. Compositions that include the novel photoacid generator compounds are also provided. The present disclosure further provides methods of making and using the photoacid generator compounds and compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS

Novel photoacid generator compounds are provided. Photoresist compositions that include the novel photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications. 2. A photoresist composition comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(i) at least one sulfonic acid derivative compound according to ;'}(ii) at least one polymer or copolymer which is capable of being imparted with an altered solubility in an aqueous solution in the presence of an acid;(iii) an organic solvent; and, optionally,(iv) an additive.3. The composition according to claim 2 , wherein the organic solvent is propylene glycol monomethyl ether acetate (PGMEA).4. The composition according to comprising:0.05 to 15 wt. % of the sulfonic acid derivative compound;5 to 50 wt. % of the at least one polymer or copolymer;0 to 10 wt. % of the additive; andreminder is propylene glycol monomethyl ether acetate.5. A process of producing a patterned structure on the surface of a substrate claim 3 , the process comprising the steps of{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, '(a) applying a layer of the composition according to onto the surface of the substrate and at least partial removal of the organic solvent (iv);'}(b) exposing the layer to electromagnetic radiation, thereby releasing an acid from the sulfonic acid derivative compound (i) in the areas exposed to the electromagnetic radiation;(c) optionally heating the layer to impart compound (ii) in the areas in which the acid has been released with an increased solubility in an aqueous solution; and(d) at least partial removal of the layer with an aqueous solution in these areas.6. The composition according to wherein claim 2 , during the exposure step ...

MANUFACTURING METHOD FOR ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK COMPRISING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PHOTO MASK, FORMING METHOD FOR PATTERN, MANUFACTURING METHOD FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE

A manufacturing method for an actinic ray-sensitive or radiation-sensitive resin composition that contains a resin, an acid generator, an organic acid, and a solvent, includes at least one of (i), (ii), or (iii) below, and a content ratio of the organic acid in the actinic ray-sensitive or radiation-sensitive resin composition is greater than 5% by mass based on a total solid content in the composition; (i) dissolving the organic acid in a solution that does not substantially contain the resin and the acid generator, (ii) dissolving the organic acid in a solution that contains the acid generator and does not substantially contain the resin, and (iii) dissolving the organic acid in a solution that contains the resin and does not substantially contain the acid generator, an actinic ray-sensitive or radiation-sensitive resin composition, an actinic ray-sensitive or radiation-sensitive film, a mask blank including the film, a forming method for a photo mask and a pattern, a manufacturing method for an electronic device, and an electronic device. 1. A manufacturing method for an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) resin , (B) acid generator , (C) organic acid; and (D) solvent , comprising:at least one of (i), (ii), or (iii) below,wherein a content ratio of (C) organic acid in the actinic ray-sensitive or radiation-sensitive resin composition is greater than 5% by mass based on a total solid content in the composition,(i) dissolving (C) organic acid in a solution that does not substantially contain (A) resin and (B) acid generator;(ii) dissolving (C) organic acid in a solution that contains (B) acid generator and does not substantially contain (A) resin; and(iii) dissolving (C) organic acid in a solution that contains (A) resin and does not substantially contain (B) acid generator.2. The manufacturing method according to claim 1 ,wherein pKa of (C) organic acid is lower than pKa of (A) resin and is greater than pKa of acid ...

Photoresist composition, resist pattern-forming method, acid diffusion control agent, and compound

A photoresist composition containing: a polymer including an acid-labile group; a radiation-sensitive acid generator; and an acid diffusion control agent that contains a compound represented by a formula (1). In the formula (1), R 1 , R 2 and R 3 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. A represents a group having a valency of n that is obtained by combining: a hydrogen atom, a linear hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms or a combination thereof; —O—, —CO—, —COO—, —SO 2 O—, —NRSO 2 —, —NRSO 2 O—, —NRCO— or a combination thereof; and n nitrogen atoms as a binding site to the carbonyl group in the formula (1), in which a sum of atomic masses of the atoms constituting A is no less than 120. n is an integer of 1 to 4.

PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS

A photo acid generator represented (1a), 3. A chemically amplified resist composition comprising (A) a base resin claim 1 , (B) the photo acid generator according to claim 1 , and (C) an organic solvent.4. A chemically amplified resist composition comprising (A) a base resin claim 2 , (B) the photo acid generator according to claim 2 , and (C) an organic solvent.9. The chemically amplified resist composition according to claim 3 , further comprising a photo acid generator besides the component (B).10. The chemically amplified resist composition according to claim 4 , further comprising a photo acid generator besides the component (B).11. The chemically amplified resist composition according to claim 3 , further comprising a quencher.12. The chemically amplified resist composition according to claim 4 , further comprising a quencher.13. The chemically amplified resist composition according to claim 3 , further comprising a surfactant insoluble in water and soluble in alkaline developer.14. The chemically amplified resist composition according to claim 4 , further comprising a surfactant insoluble in water and soluble in alkaline developer.15. A patterning process comprising the steps of:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'applying the chemically amplified resist composition according to onto a substrate; performing exposure by a high energy beam after heat treatment; and performing development by using a developer.'}16. The patterning process according to claim 15 , wherein in the exposure step claim 15 , a liquid having a refractive index of 1.0 or more is placed between a resist coat film and a projection lens to perform immersion exposure.17. The patterning process according to claim 16 , wherein a top coat is applied on the resist coat film claim 16 , and the liquid having a refractive index of 1.0 or more is placed between the top coat and the projection lens to perform the immersion exposure.18. The patterning process according to claim 15 , ...

METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE

A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid. 3. The method according to claim 1 , wherein the compound (B) contains an anion claim 1 , the anion containing two or three fluorine atoms.5. The method according to claim 1 , wherein the resin (A) further contains a repeating unit (LC) with a lactone structure different from the lactone structures of general formula (1) claim 1 , or a repeating unit (SU) with a sultone structure.6. The method according to claim 5 , wherein the repeating unit (LC) contains a lactone-containing polycyclic structure claim 5 , or the repeating unit (SU) contains a sultone-containing polycyclic structure.8. The method according to claim 7 , wherein any of repeating units of general formula (aI) is contained in an amount of 30 to 80 mol % based on all repeating units constituting the resin (A).9. The method according to claim 7 , wherein any of repeating units of general formula (aI) is contained in an amount of 50 to 70 mol % based on all repeating units constituting the resin (A).10. The method according to claim 1 , wherein the resin (A) contains no repeating units containing a hydroxyl group.14. The actinic-ray- or radiation-sensitive resin composition according to claim 12 , wherein the compound (B) contains an anion claim 12 , the anion containing two or three fluorine atoms.16. The actinic-ray- or radiation-sensitive resin composition according to claim 12 , ...

COMPOSITION FOR FORMING RESIST PROTECTION FILM FOR LITHOGRAPHY AND METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME

Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof. 1. A resist protective film composition for lithography , the composition comprising:a polymer having a weight average molecular weight of 2,000 to 100,000 comprising a repeating unit having a fluorine-containing functional group at a side chain of the polymer; anda solvent,wherein the solvent comprises a material having a Hildebrand solubility parameter of 12.5 to 22.0, and an amount of the material having a Hildebrand solubility parameter of 12.5 to 22.0 is 10 to 90 parts by weight based on 100 parts by weight of the total weight of the solvent.2. The resist protective film composition of claim 1 , wherein the material having a Hildebrand solubility parameter of 12.5 to 22.0 has 3 to 16 carbon atoms and 1 to 4 oxygen atoms.3. The resist protective film composition of claim 1 , wherein the solvent is at least one selected from 2 claim 1 ,5-dimethyltetrahydrofuran claim 1 , methyl hexanoate claim 1 , 1 claim 1 ,2-epoxypropane claim 1 , 4-methyl-1 claim 1 ,3-dioxane claim 1 , 2-methoxy-1 claim 1 ,3-dioxane claim 1 , 2-ethyl-2-methyl-1 claim 1 ,3-dioxane claim 1 , dibutyl adipate claim 1 , isoamyl acetate claim 1 , cyclohexyl acetate claim 1 , ethyl 3-oxohexanoate claim 1 , 2 claim 1 ,2 claim 1 ,4 claim 1 ,4-tetramethyl-3-pentanone claim 1 , 2 claim 1 ,4-dimethyl-3-pentanone claim 1 , 4-heptanone claim 1 , cyclopropyl methyl ketone claim 1 , 3 claim 1 ,3-dimethyl-2-butanone claim 1 , and butyl acetate.4. The resist protective film composition of ...