КОМПОЗИЦИОННЫЕ МАТЕРИАЛЫ НА ОСНОВЕ ОБЪЕМНЫХ УГЛЕРОДНЫХ НАНОТРУБОК И МЕТАЛЛА И СПОСОБ ИХ ИЗГОТОВЛЕНИЯ

Изобретение относится к композиционным материалам на основе углеродных нанотрубок. Композиционный материал на основе объемных углеродных нанотрубок и металла. Композиционный материал на основе объемных углеродных нанотрубок содержит слой объемных углеродных нанотрубок, содержащий множество углеродных нанотрубок, и пленку металла, нанесенную поверх слоя материала из объемных углеродных нанотрубок с возможностью проникновения в пустоты между отдельными углеродными нанотрубками. Изобретение направлено на уменьшение электрического сопротивления между множеством углеродных нанотрубок. 4 н. и 11 з.п. ф-лы, 3 ил.

ИЗОЛИРОВАННЫЙ ЭЛЕКТРИЧЕСКИЙ ПРОВОДНИК (ВАРИАНТЫ)

... 1. Изолированный электрический проводник, содержащий:медную жилу;слой алюминия, расположенный на упомянутой медной жиле;диэлектрический слой оксида алюминия, сформированный поверх упомянутого слоя алюминия; ислой анодированного алюминия высокой чистоты, сформированный поверх упомянутого диэлектрического слоя оксида алюминия посредством процесса, выбранного из группы, состоящей из осаждения из паровой фазы, осаждения методом распыления и соэкструзии.2. Изолированный электрический проводник по п.1, при этом медная жила содержит множество отдельных медных проволок.3. Изолированный электрический проводник по п.1, при этом упомянутый слой анодированного алюминия высокой чистоты, сформированный посредством соэкструзии, анодирован вслед за экструзией.4. Изолированный электрический проводник по п.1, при этом поверх упомянутой медной жилы сформированы более чем два слоя алюминия.5. Изолированный электрический проводник, содержащий:медную жилу;слой алюминия, расположенный на упомянутой медной жиле ...

Низколегированный жаропрочный сплав на основе меди и изделие, выполненное из него

Изобретение относится к металлургии, в частности металлургии низколегированных сплавов на основе меди, и может быть использовано для изготовления стенок камер сгорания реактивных двигателей, водоохлаждаемых пресс-форм, жаропрочных проводов, контактов и т. д. Низколегированный жаропрочный сплав на основе меди содержит, мас.%: кобальт 0,10-0,45, хром 0,10-0,45, кремний 0,10-0,20, магний до 0,05, по меньшей мере один элемент, выбранный из группы, содержащей литий, церий, бор, до 0,08 в сумме, при этом сплав имеет структуру, содержащую фазы Co2Si и Cr3Si. Изобретение также относится к тепло- и электропроводному изделию, выполненному из указанного медного сплава, в частности к детали ракетного двигателя. Изобретение направлено на создание сплава с высокой жаропрочностью при сохранении тепло- и электропроводности на уровне не ниже 80 % от меди. 2 н. и 4 з.п. ф-лы, 1 табл., 9 пр.

КОМПОЗИЦИОННЫЕ МАТЕРИАЛЫ НА ОСНОВЕ ОБЪЕМНЫХ УГЛЕРОДНЫХ НАНОТРУБОК И МЕТАЛЛА И СПОСОБ ИХ ИЗГОТОВЛЕНИЯ

... 1. Композиционный материал (10) на основе объемных углеродных нанотрубок и металла, содержащий:слой (12) материала из объемных углеродных нанотрубок, содержащий множество углеродных нанотрубок; ипленку (14) металла, нанесенную поверх указанного слоя (12) материала из объемных углеродных нанотрубок, проникающую в пустоты между отдельными углеродными нанотрубками и уменьшающую электрическое сопротивление между указанным множеством углеродных нанотрубок.2. Композиционный материал (10) по п. 1, отличающийся тем, что по меньшей мере часть из указанного множества углеродных нанотрубок представляет собой металлические углеродные нанотрубки.3. Композиционный материал (10) по п. 1, отличающийся тем, что указанное множество углеродных нанотрубок содержит по меньшей мере одну из нанотрубок, выбранных из одностенных углеродных нанотрубок и многостенных углеродных нанотрубок.4. Композиционный материал (10) по п. 1, отличающийся тем, что указанный слой (12) материала из объемных углеродных нанотрубок ...

Verbesserte Glaskeramik-Kupfer-Verklebung.

Elektrischer Einpress-Kontaktstift

Beschrieben wird ein elektrischer Kontaktstift (6), der zum Einpressen in ein Loch (2) bestimmt ist, welches in einer Schaltungsträgerplatte (1) vorgesehen ist und eine Umfangswand mit einer metallisierten Oberfläche hat, wobei der Kontaktstift (6) hauptsächlich aus Kupfer oder aus einer Kupferlegierung besteht und wenigstens in einem in das Loch (2) einzupressenden Teilbereich von einer Zinn enthaltenden Schicht (10) umgeben ist. Erfindungsgemäß ist vorgesehen, dass die das Zinn enthaltende Schicht (10) die Oberfläche des Kontaktstifts (6) bildet und im Wesentlichen nur Zinn und Zinnoxid enthält, wobei das Zinnoxid durch elektrolytische Oxidation gebildet ist und seine Konzentration am größten an der Oberfläche der Schicht ist.

Leiter eines elektrischen Drahts

Leiter mit einem Litzendraht, der einen oder mehrere erste Elementdrähte (12) aus Reinkupfer und einen oder mehrere zweite Elementdrähte (14) aus einer Kupferlegierung aufweist, wobei die Kupferlegierung besteht aus: einem Ni-Anteil von 1,5 bis 4,0 Masse-%; einem Si-Anteil von 0,4 bis 0,5 Masse-%; und einem Rest aus im Wesentlichen Cu und unvermeidbaren Verunreinigungen.

Produkt aus einer Kupferlegierung und Verfahren zu dessen Herstellung

Produkt aus einer Kupferlegierung mit hoher Festigkeit und hoher elektrischer Leitfähigkeit mit gehemmtem Ausscheidungswachstum, die aus 0,5–4,0% Nickel (Ni), 0,1–1,0% Silizium (Si), 0,05–0,8% Zinn (Sn) sowie verbleibendem Rest Kupfer und unvermeidbaren Verunreinigungen besteht, wobei Nickel (Ni) bis zu 1% durch Eisen (Fe) oder Kobalt (Co) ersetzbar ist, wobei die Größe der Ausscheidungspartikel in dem Produkt weniger als 0,5 μm beträgt, die Ausscheidungspartikelanzahl in dem Produkt zwischen 19 und 32 pro 100 μm2 liegt, und das Produkt nach einem Verfahren ohne Vergütungsbehandlung mit folgenden Schritten hergestellt ist: – Schmelzen und Gießen von Ausgangsmaterialien zu einem Block bzw. Barren aus 0,5–4,0% Nickel (Ni), 0,1–1,0% Silizium (Si), 0,05–0,8% Zinn (Sn) sowie verbleibendem Rest Kupfer und unvermeidbaren Verunreinigungen, wobei Nickel (Ni) bis zu 1% durch Eisen (Fe) oder Kobalt (Co) ersetzbar ist; – Oberflächenbehandeln und Kaltwalzen des Barrens; – Glühen des kaltgewalzten Barrens ...

INSULATED MULTIFILAMENT ELECTRICAL CABLE WITH PROTECTED CONDUCTORS SUITABLE FOR SOLDERING AND NON-THERMO-TACKY

Elektrische Kontaktelemente

A contact intended especially for pins of electronic assemblies, consists of a core alloy of 0.2 to 1.5 wt.% Ag and the remainder copper, in which at least the contacting surface of the core component has one or more highly conductive and/or easily solderable coatings. This provides not only better conductivity in the contact but also comparatively high strength with simple production and good workability, making it possible to miniaturise the contacts.

Material und Beschichtung für Verbindungssammelschiene

In einer Ausführungsform weist ein elektrochemisches System eine Verbindungssammelschiene auf, die ein Substrat und eine Beschichtung aufweist, die das Substrat kontaktiert, wobei die Beschichtung eine Schicht aus galvanisiertem elementarem Nickel aufweist.

MAGNESIUMDRUCKGUSSLEGIERUNG

Offenbart sind eine Magnesiumdruckgusslegierung und eine Legierungszusammensetzung zum Verbessern von Wärmeleitfähigkeit und elektrischer Leitfähigkeit. Eine Magnesiumdruckgusslegierung enthält eine Menge von etwa 0,5 bis 2,0 Gew.% Aluminium (Al) und dem Rest Magnesium (Mg) bezogen auf das Gesamtgewicht der Magnesiumdruckgusslegierung. Entsprechend wird eine Legierung, die eine hohe Wärmeleitfähigkeit und elektrische Leitfähigkeit hat verglichen mit einer üblichen AZ91D Magnesiumlegierung, erlangt.

Leitfähiges Pulver und Verfahren zur Herstellung desselben

Leitfähiges Pulver mit einer Packungsdichte mit einem relativen Wert von 68 Vol.-% oder mehr.

Electrical cable used in the automobile industry comprises a strand consisting of single wires made from copper and single wires made from a copper-tin alloy

Electrical cable (1) comprises a strand consisting of x single wires (10) made from copper and y single wires (20) made from a copper-tin alloy, where x and y are at least 1 and x + y is at least 7.

Kupferlegierung und Verfahren zur Herstellung dieser Kupferlegierung

Artikel mit einer Beschichtung von elektrisch leitfähigem Polymer und Edel-/Halbedelmetall sowie Verfahren zu deren Herstellung

Beschichteter Artikel, der (i) mindestens eine nicht elektrisch leitende Basisschicht, (ii) mindestens eine Schicht aus Kupfer und/oder einer Kupferlegierung, und (iii) eine Schicht, die 5 bis 45% mindestens eines intrinsisch leitfähigen Polymeren enthält, bezogen auf die Masse der Schicht (iii), aufweist, wobei die Kupfer- oder Kupferlegierungsschicht (ii) zwischen der Basisschicht (i) und der das intrinsisch leitfähige Polymer enthaltenden Schicht (iii) angeordnet ist, dadurch gekennzeichnet, dass die Schicht (iii) 5 bis 45% mindestens eines Edelmetalls ausgewählt aus der Gruppe bestehend aus Ag, Au, Pd, Pt, Rh, Ir, Ru, Os, Re oder mindestens eines Halbedelmetalls ausgewählt aus der Gruppe bestehend aus Ni, Ti, Cu, Sn, Bi oder eine Mischung davon enthält, bezogen auf die Masse der Schicht (iii), wobei die Schicht (iii) eine Schichtdicke von 10 nm bis 1 μm aufweist.

Copper-zinc alloys

An alloy has the following percentage composition:- Up to 3% in total of the following incidental elements may be present:- Fe up to 1.5, Si up to 0.5, P up to 0.05, Mg up to 0.5, Sn up to 1, Zr up to 0.5, Mn up to 3, Pb up to 0.5, Ni up to 1, Co up to 1.

COMPOSITE CONDUCTIVE MATERIAL & METHOD FOR MANUFACTURING SAME

Commutators and other electric current collectors

Electric current collectors are made of sintered copper in conjunction with other metals of lower conductivity in an amount at least equal to 5 per cent. of the total weight. The optimum percentage is 10-30, but may be higher, e.g. nickel up to 70 per cent. Other metals, e.g. lead, iron, chromium, nickel, tin, cadmium, either individually, or two or more together, alloyed or otherwise may be used. The body may be sintered under pressure, or in the case of additional metals of low melting point, these may be used to impregnate the sintered copper. Alternatively, an alloy may be made, pulverized, and sintered. A small proportion, e.g. 1 per cent. of graphite may be added. Preferred amounts of additional metal as percentages of total weight are: lead 30, iron 10, chromium 20, nickel 20, tin 10, cadmium 20. If both iron and lead are used, the preferred percentage is: iron 10 and lead 20, while if nickel and lead are used together, then nickel 20 and lead 5. The sintered body may be impregnated ...

Copper wire for bonding a semiconductor device

The present invention eliminates the problems associated with the use of oxygen-free copper and other high-purity copper materials as bonding wires. At least one rare earth element, or at least one element selected from the group consisting of Mg, Ca, Ti, Zr, Hf, Li, Na, K, Rb and Cs, or the combination of at least one rare earth element and at least one elemented selected from the above-specified group is incorporated in high-purity copper as a refining component in an amount of 0.1-100 ppm on a weight basis, and the high-purity copper is subsequently refined by zone melting. The very fine wire drawn from the so refined high-purity copper has the advantage that it can be employed in high-speed ball bonding of a semiconductor chip with a minimum chance of damaging the bonding pad on the chip by the ball forming at the tip of the wire.

Extendible Socket Device

COMPOSITE CONDUCTIVE MATERIAL AND METHOD FOR MANUFACTURING SAME

High-strength high-conductiviity copper alloys

Cu-Ni-Sb alloys have been discovered having a two-phase or multiphase state at low levels of antimony, and alloys in such state have high strength, high ductility, and high electrical conductivity. Tensile strengths in the range of 80,000-160,000 psi have been achieved, and electrical conductivity in the range of 30-65 percent of the conductivity of copper. Alloys of the invention can be made by processing involving homogenizing, rapid cooling, cold working, and aging; for maximized electrical conductivity, dual combined steps of cold working and aging are beneficial.

COPPER-BASE ALLOYS

Conductive element

ELECTRICAL COMPOUND LEADER AND MANUFACTURE PROCEDURE FOR IT

CABLES FOR POWER INSTALLATION FOR LOCALVARIABLE CONSUMERS

SPULE

VERWENDUNG EINES DURCH BOR BZW. LITHIUM DESOXIDIERTEN SAUERSTOFFFREIEN KUPFERS FUER HOHLPROFILE

PROCEDURE FOR THE PRODUCTION FROM DIAPHRAGM ELECTRODE BUILDING GROUPS TO THE USE IN A PROTON EXCHANGE DIAPHRAGM

COIL

ELECTRICAL CONDUCTOR WITH AN OPPOSITE OF A TEMPERATURE OVER 250 DEGREES C STEADY ISOLATION AND PROCEDURE FOR THE PRODUCTION OF THIS LEADER.

Metallisierung für ein Dünnschichtbauelement, Verfahren zu deren Herstellung und Sputtering Target

The invention relates to a metallization for a thin film component and to a method for producing a metallization. The invention further relates to a sputtering target made of a Mo-based alloy, containing Al and Ti and the usual impurities, and to a method for producing a sputtering target from an Mo-based alloy.

COIL

OBERLEITUNGSDRAHT OF AN ELECTRICAL HIGH-SPEED RAILROAD LINE AND PROCEDURE FOR ITS PRODUCTION

Copper alloy, copper alloy ingot, copper alloy solution forming material, copper alloy trolley wire and method for producing copper alloy trolley wire

This copper alloy is characterized by having a composition that contains from 0.05 mass% to 0.70 mass% (inclusive) of Co, from 0.02 mass% to 0.20 mass% (inclusive) of P, from 0.005 mass% to 0.70 mass% (inclusive) of Sn, and one or more elements selected from among B, Cr and Zr, with the balance made up of Cu and unavoidable impurities; and this copper alloy is also characterized in that if X (mass ppm) is the content of B, Y (mass ppm) is the content of Cr and Z (mass ppm) is the content of Zr, X, Y and Z satisfy formula (1) 1 ≤ (X/5) + (Y/50) + (Z/100) and formula (2) X + Y + Z ≤ 1,000.

Metal and ceramic nanofibers

Provided herein are nanofibers and processes of preparing nanofibers. In some instances, the nanofibers are metal and/or ceramic nanofibers. In some embodiments, the nanofibers are high quality, high performance nanofibers, highly coherent nanofibers, highly continuous nanofibers, or the like. In some embodiments, the nanofibers have increased coherence, increased length, few voids and/or defects, and/or other advantageous characteristics. In some instances, the nanofibers are produced by electrospinning a fluid stock having a high loading of nanofiber precursor in the fluid stock. In some instances, the fluid stock comprises well mixed and/or uniformly distributed precursor in the fluid stock. In some instances, the fluid stock is converted into a nanofiber comprising few voids, few defects, long or tunable length, and the like.

Copper alloy for electronic/electric device, copper alloy thin plate for electronic/electric device, method for manufacturing copper alloy for electronic/electric device, and conductive part and terminal for electronic/electric device

Provided is a copper alloy comprising, by mass%, Zn at greater than 2.0% and 36.5% or less, Sn at 0.1% to 0.9%, Ni at 0.05% or more and less than 1.0%, Fe at 0.001% or more and less than 0.10%, P at 0.005% to 0.10%, and the remainder including Cu and inevitable impurities, wherein in atomic ratio, 0.002Fe/Ni<1.5, 3<(Ni+Fe)/P<15, and 0.3 Подробнее

COPPER BASE COMPOSITION

ELECTROMAGNETIC PROTECTION SHEATH MADE OF TEXTILE

Une gaine de protection électromagnétique en textile (10) est formée de filaments conducteurs s'étendant suivant une première direction (X) et de filaments non conducteurs entrelacés avec les filaments conducteurs. Utilisation notamment pour le blindage de câbles dans des applications aéronautiques.

DOWNHOLE CABLES WITH BOTH FIBER AND COPPER ELEMENTS

Provided is a method of manufacturing a downhole cable, the method including, forming a helical shape in an outer circumferential surface of a metal tube, the metal tube having a fiber element housed therein, and stranding a copper element in a helical space formed by the metallic tube. Also provided is a downhole cable including, a metallic tube having a helical space in an outer circumferential surface thereof, wherein the metallic tube has a fiber element housed therein, and a copper element disposed in a helical space formed by the steel tube. Double-tube and multi-tube configurations of the downhole cable are also provided.

METHOD FOR MANUFACTURING HEATING ELEMENT, HEATING ELEMENT MANUFACTURED THEREBY, AND USE METHOD THEREOF

The present invention relates to a method for manufacturing a heating element, a heating element manufactured thereby, and a use method thereof and, more particularly, to a method of manufacturing a heating element by combining a plurality of ultrafine wires having a high resistance value in a parallel structure in which the entire areas of the plurality of ultrafine wires contact each other, so that a combined resistance value is reduced while each of the ultrafine wires has a high resistance value to improve heat generating efficiency; the heating element; a use method thereof. A method for manufacturing a heating element, according to an embodiment of the present invention, forms an ultrafine wire having a high resistance value from a single metal or an alloy metal and then joins a plurality of ultrafine wires so as to be in contact with each other to form a single bundle resulting in a single-strand heating wire.

COMPOSITE AND NANOWIRE CONDUIT

An electrical wiring system comprises a plurality of electrical conduits, each of which comprises a plurality of electrically conductive wires, a carrier encapsulating and electrically insulating the wires from each other, the carrier being composed of a rigid material, and at least connector carried by the carrier in electrical communication with the wires. The electrical wiring system further comprises a junction box comprising a plurality of interconnecting wires and a plurality of connectors electrically coupled together by the interconnecting wires. The plurality of connectors of the junction box are coupled to the plurality connectors of the electrical conduits.

POWER/FIBER HYBRID CABLE

The present disclosure relates to a hybrid cable having a jacket with a central portion positioned between left and right portions. The central portion contains at least one optical fiber and the left and right portions contain electrical conductors. The left and right portions can be manually torn from the central portion.

CATHETER WITH COAXIAL THERMOCOUPLE

An improved thermocouple includes a drawn coaxial thermocouple wire pair having a more precise "hot" junction at which a first and second metallic material electrically connect with each other for measuring temperature. Adapted for use with an electrophysiologic catheter, the improved thermocouple comprising an elongated body having a proximal end and a distal end. The body includes a core of a first metallic material, a first coaxial layer of ceramic material, and a second coaxial layer of a second metallic material. The thermocouple further includes a solder cap on the distal end, the solder cap electrically connecting the core and the second layer at the distal end. A method of manufacturing includes drawing the body through a die, and applying solder on a distal end of the body to electrically connect the two metallic materials at the distal end.

RADIATION AND HEAT RESISTANT CABLES

A cable intended for use in a nuclear environment includes one or more conductors, a longitudinally applied corrugated shield surrounding the one or more conductors, and a cross- linked polyolefm jacket layer surrounding the longitudinally applied corrugated shield. The cable conducts about 5,000 volts to about 68,000 volts in use and is radiation resistant and heat resistant. The cable comprises a life span of about 40 years or more when measured in accordance with IEEE 323. Methods for making a cable and a nuclear reactor utilizing such a cable are also provided.

Drahtkörper mit grosser Zugfestigkeit und geringem spezifischen Widerstand.

Direkt als Kontaktstift dienende, mit einem Schutzüberzug versehene Stromdurchführung für Entladungsgefässe und Verfahren zur Herstellung einer derartigen Stromdurchführung.

Procédé de fabrication d'un organe conducteur de l'électricité et organe obtenu par ce procédé

Verfahren zur Herstellung eines Verbundmetalls

Kupfer-Zink-Legierung

Verfahren zur Herstellung von Halbzeug aus aushärtbaren Kupferlegierungen

Verfahren zum Erniedrigen der Erweichungstemperatur und Verbessern der elektrischen Leitfähigkeit von sauerstofffreiem Kupfer

High strength high conductivity copper - base alloys

Copper-base alloys combining annealed strengths of 30t.s.i. with conductivities of 75 to 81 IACS. Their comp. is Fe 1.5 to 3.5%, Si 0.02 to 0.21%, P 0.01 to 0.15% and/or Zn 0.03 to 0.2%, Al to 0.07%, and Mn to 0.08% may also be added. Casting by normal methods is followed by hot-rolling at 800 degrees to 1050 degrees C, solids are then cold-rolled with 50% min. reduction between anneals. Bell annealing developes max conductivity at temps. between 400 degrees and 600 degrees C.

VERFAHREN ZUR HERSTELLUNG VON KUPFERLEGIERUNGEN HOHER LEITFAEHIGKEIT UND FESTIGKEIT.

Pièce conductrice électrique et son procédé de fabrication

Pièce conductrice électrique et son procédé de fabrication

Mehradrige flexible elektrische Leitung

Verfahren zur Herstellung von elektrischen Leitern aus Kupfer

Verfahren zur Herstellung von Kupferlegierungen hoher Leitfähigkeit und Festigkeit

Verfahren zur Herstellung von Kupferlegierungen hoher Leitfähigkeit und Festigkeit

Verfahren zur Herstellung von Kupferlegierungen hoher Leitfähigkeit und Festigkeit

Verfahren zur Herstellung von Kupferlegierungen hoher Leitfähigkeit und Festigkeit

Alliage de cuivre-bore-soufre

Verfahren zur Herstellung von Kupferlegierungen hoher Leitfähigkeit und Festigkeit

Resistance wire alloy - of copper, manganese and gallium

Alloy for electrical resistance wire e.g. for resistance boxes potentiometers etc. comprises 0.1-10% Ga, 8-14% Mn balance Cu and may also contain 0.1-0.5% Ge, 0.1-1.5% In, 0.1-5% Al, 0.1-5% Ni separately or together. The Ga addition ensures a low temp. coefft. low emf from the thermocouple formed with Cu, a resistance increase on corrosion of the alloy (fail safe device) and ductility.

PURIFYING WIRE FOR CONTACTING SEMICONDUCTOR COMPONENTS.

METHOD OF MAKING AN ARTICLE OF COPPER BERYLLIUM ALLOY.

PROCEDURE FOR THE PRODUCTION OF A HOLLOW SECTION AND A AFTER THIS PROCEDURE MANUFACTURED HOLLOW SECTION.

Sealed-Conductor Cables.

Die Erfindung betrifft einen verlitzten Leiter (2), der eine spezifische Anzahl von Drähten einer ersten Art (5) umfasst, die, wenn man einen Querschnitt des verlitzten Leiters betrachtet, in einem hexagonalen Muster um einen mittleren Draht herum in mindestens zwei Schichten angeordnet sind. Die Drähte, die an den Knoten des hexagonalen Musters angeordnet sind, sind Drähte einer zweiten Art, die im Prinzip einen kleineren Durchmesser als die Drähte der ersten Art aufweisen. Die Zwischenräume (10) zwischen den ersten und den zweiten Drähten sind mit einem Dichtungsmittel (3) ausgefüllt.

Electric cable.

Die Erfindung betrifft ein Elektrokabel für die Versorgung von Flugzeugen und ähnlichen Einrichtungen mit Hochfrequenzstrom von vorzugsweise 400 Hz. Das Kabel ist mit einem zentralen Neutral- und/oder Rückleiter (1) und mindestens sechs konzentrisch um ihn herum verteilt angeordneten Phasenleitern (2a, 2b, 3a, 3b, 4a, 4b) ausgestattet, wobei jede Phase auf zwei symmetrisch gegenüberliegende Phasenleiter (2a, 2b, 3a, 3b bzw. 4a, 4b) aufgeteilt ist. Der Neutral- und/oder Rückleiter (1) ist aus vorzugsweise sechs einzeln isolierten Nullleitern (16) aufgebaut, deren Gesamtquerschnitt dem Querschnitt eines einzelnen massiven Nullleiters annähernd entspricht. Dadurch wird mit sechsfacher Redundanz das Risiko eines Nullleiterbruches reduziert, ohne die elektrischen Eigenschaften des Kabels zu beeinträchtigen.

Electrical Cable.

Die Erfindung betrifft ein Elektrokabel für die Versorgung von Flugzeugen und ähnlichen Einrichtungen mit Hochfrequenzstrom von vorzugsweise 400 Hz. Das Kabel ist mit einem zentralen Neutral- und/oder Rückleiter (1) und mindestens sechs konzentrisch um ihn herum verteilt angeordneten Phasenleitern (2a, 2b, 3a, 3b, 4a, 4b) ausgestattet, wobei jede Phase auf zwei symmetrisch gegenüberliegenden Phasenleitern (2a, 2b, 3a, 3b bzw. 4a, 4b) aufgeteilt ist. Der Neutral- und/oder Rückleiter (1) ist aus vorzugsweise sechs einzeln isolierten Nullleitern (16) aufgebaut, deren Gesamtquerschnitt dem Querschnitt eines einzelnen massiven Nullleiters annähernd entspricht. Dadurch wird mit sechsfacher Redundanz das Risiko eines Nullleiterbruches reduziert, ohne die elektrischen Eigenschaften des Kabels zu beeinträchtigen.

Magnetic-insulated cable having an end sleeve.

Les matériaux utilisés pour le câble à isolation magnétique (1) équipé d’un manchon terminal selon la présente invention, comprenant des parties liées formées avec une brasure à l’argent, sont toutes des substances amagnétiques, et par conséquent, il n’y aura pas de perturbation d’un champ magnétique due à la présence d’une substance magnétique. De plus, une paire ou une pluralité de paires de fils conducteurs (7 A à D) du câble à isolation magnétique qui transmettent un signal ou de l’énergie électrique sont chacune formées suivant une configuration en double hélice, et par conséquent, la génération d’un champ magnétique due au courant circulant à travers les fils conducteurs (7) et l’influence d’un champ magnétique externe sur un signal ou de l’énergie électrique devant être transmis peuvent être rendues minimales par utilisation des deux fils conducteurs de chaque paire en tant que ligne de signalisation aller-retour unique ou en tant que ligne d’alimentation électrique aller-retour ...

METHOD OF MANUFACTURING HEATING ELEMENT, HEATING ELEMENT, PREPARED BY THE PRESENT METHOD, AND METHOD OF ITS APPLICATION

Terminal structure for wire harness

Disclosed is a vehicle wire harness terminal structure with a high degree of corrosion protection. In the terminal region of a covered electric wire (10), a swage section (1A) formed on one end of a terminal fitting (1) is swaged along the circumference of the covered section of the covered electric wire (10), and the terminal fitting (1) is fixed to the terminal section of the covered electric wire (10). A molding resin (20) is formed completely covering the entire circumference of at least the exposed end region of the swage section (1A) (a region comprising a fracture surface (1r) and a base edge (1e)) and the regions adjacent thereto.

Copper alloy wire, copper-alloy strand wire, coated electric wire, and electric wire with terminal

Adaptive datacenter connector

ELECTRIC CONDUCTING PART HAS INSULATION RESISTING HAS HIGH TEMPERATURES AND MANUFACTORING PROCESS OF THIS ONE

Alloy copper-zirconium-vanadium

ALLOYS [...][...] PARTIALLY TO MG - OR AT AC - VECTORS FOR ELECTRICAL CONDUCTORS AND/OR THERMAL

Alliages CuSn désoxydés partiellement au Mg- ou au Ca- destinés aux conducteurs électriques et/ou thermiques

L'invention concerne des alliages CuSn désoxydés partiellement au Mg- ou au Ca- à usage de conducteurs électriques et/ou thermiques. Composition pondérale de ces alliages : - teneur en Sn comprise entre 200 et 1200 ppm; - teneur résiduelle en Mg (ou Ca) inférieure à 10ppm, le Mg ou le Ca étant sous forme d'oxyde; - teneur en oxygène inférieure à 100 ppm; - teneur en impuretés métalliques inférieure à 40ppm; - le cuivre constitue le reste. L'invention concerne aussi un procédé comportant une désoxydation partielle au Mg ou au Ca, qui permet d'obtenir ces alliages.

Protective coating for copper cables - using layer of aluminium followed by anodic treatment and a resin

CONDUCTING MATERIAL COMPOSITE, PROCEEDED TO MANUFACTURE IT AND ITS EMPLOYMENT IN A MATERIAL FOR ELECTRICAL CONTACTS

TIN-NICKEL PLATED COPPER ARTICLES AND PROCESS OF MANUFACTURE

COPPER ALLOY

WIRE FOR ELECTRIC RAILWAY AND METHOD OF PRODUCING THE SAME

구리합금 선재 및 그 제조방법

... 0.5질량% 이상의 Ag 및 0.05질량% 이상의 Mg를 함유하고, 잔부가 Cu 및 불가피한 불순물이며, 인장 강도가 350MPa 이상, 신장이 7% 이상인 구리합금 선재 및 그 제조방법에 의하여, 강도, 신장, 도전성이 우수한, 예를 들면, 마그넷 와이어용으로서 적합한 구리합금 선재를 염가로 제공한다.

도전성 및 응력 완화 특성이 우수한 구리 합금판

... 고강도, 고도전성 및 우수한 응력 완화 특성을 겸비한 구리 합금판, 그 구리 합금판을 사용한 대전류용 전자 부품 및 방열용 전자 부품 그리고 구리 합금판의 제조 방법을 제공한다. Zr 및 Ti 중의 1 종 또는 2 종을 합계로 0.01 ∼ 0.50 질량％ 함유하고, 잔부가 구리 및 그 불가피적 불순물로 이루어지고, 70 ％IACS 이상의 도전율, 및 330 ㎫ 이상의 0.2 ％ 내력을 갖고, 150 ℃ 에서 1000 시간 유지 후의 응력 완화율이 15 ％ 이하이고, 수의적으로, Ag, Fe, Co, Ni, Cr, Mn, Zn, Mg, Si, P, Sn 및 B 중의 1 종 이상을 1.0 질량％ 이하 함유하는 구리 합금판이다.

REFRACTORY METAL-DOPED SPUTTERING TARGETS

Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6 % by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films. COPYRIGHT KIPO & WIPO 2010 ...

CONDUCTIVE MATERIAL, CONDUCTIVE PASTE, CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE

전자·전기 기기용 구리 합금, 전자·전기 기기용 구리 합금 박판, 전자·전기 기기용 도전 부품 및 단자

... 내응력 완화 특성이 확실하고 또한 충분히 우수함과 함께 강도, 굽힘 가공성이 우수한 전자·전기 기기용 구리 합금, 그것을 사용한 전자·전기 기기용 구리 합금 박판, 전자·전기 기기용 도전 부품 및 단자를 제공한다. Zn 을 23 mass％ 이상 36.5 mass％ 이하, Sn 을 0.1 mass％ 이상 0.9 mass％ 이하, Ni 를 0.15 mass％ 이상 1.0 mass％ 미만, Fe 를 0.001 mass％ 이상 0.10 mass％ 미만, P 를 0.005 mass％ 이상 0.1 mass％ 이하 함유하고, 잔부가 Cu 및 불가피적 불순물로 이루어지고, 원자비로, 0.002 ≤ Fe/Ni < 0.7, 3 < (Ni + Fe)/P < 15, 0.3 < Sn/(Ni + Fe) < 2.9 를 만족시키고, 모든 결정립계 길이 (L) 에 대한 Σ3, Σ9, Σ27a, Σ27b 의 각 입계 길이의 합 (Lσ) 의 비율인 특수 입계 길이 비율 (Lσ／L) 이 10 ％ 이상이다.

감소된 열 변곡점을 갖는 에너지 효율이 높은 도체 및 그의 제조방법

... 본 발명은 알루미늄, 알루미늄 합금, 구리, 구리 합금 또는 구리 미세 합금의 도전성 재료가 대부분 인장력이 없거나 또는 압축 응력하에 있도록 강도 부재의 프리-스트레스 컨디셔닝을 통해 전기 전달 및 분배를 위한 전기 전도체에 관한 것이다. 강도 부재는 도체가 연선되기 전에 인장 응력을 받아, 도체의 열 변곡점은 더 낮아진다.

LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

The present invention provides a liquid crystal display device which can improve flatness of a display panel, particularly a lower layer of a polarizing plate, and a manufacturing method thereof. The liquid crystal display device comprises: an upper substrate; a black matrix located on the upper substrate; a residual pattern located on the black matrix; a color conversion part located at a region defined by the residual pattern; a planarization layer located on the color conversion part and the residual pattern; and an upper polarizing plate located on the planarization layer. The color conversion part includes wavelength conversion particles converting a wavelength of light. COPYRIGHT KIPO 2018 ...

CONDUCTIVE STRUCTURE BODY AND METHOD FOR MANUFACTURING THE SAME

실링된 도체 케이블

... 본 발명은 가닥 도체 (2) 에 관한 것으로, 이것은 가닥 도체의 단면을 볼 때, 적어도 2 개 층들에 의해 중심 와이어 (7) 둘레에서 육각형 패턴으로 배열되는, 특정 개수의 제 1 유형의 와이어 (5) 를 포함한다. 육각형 패턴의 정점들에 배열되는 와이어들은 원칙적으로 제 1 유형의 와이어들 (5) 보다 작은 직경을 가지는 제 2 유형의 와이어 (6) 를 갖는다. 상기 제 1 및 제 2 와이어들 사이 틈새 공간들 (10) 은 실링제 (3) 에 의해 충전된다.

Cu-Co-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME

The present invention provides Cu—Co—Si system alloys that have desirable mechanical and electrical characteristics as a copper alloy for electronic materials, and have uniform mechanical characteristics. The copper alloys for electronic materials contain 0.5 to 4.0 mass % Co, 0.1 to 1.2 mass % Si, and the balance being Cu and unavoidable impurities. An average grain size is 15 to 30 μm and an average difference between maximum grain size and minimum grain size in every observation field of 0.5 mm 2 is not more than 10 μm.

Conductor for electric wire, and electric wire for automobile

A conductor for electric wire that has excellent strength and excellent weldability, and an electric wire for automobile including the conductor. The conductor for electric wire contains a copper alloy having an oxygen content of 50 mass parts per million or less, the copper alloy containing 0.1 to 0.6 mass % Mg, and a balance of copper and an unavoidable impurity. It is preferable that the copper alloy further contains one or a plurality of material elements selected from the group consisting of Ag, In, Sr and Ca, the selected one or plurality of material elements being 0.0005 to 0.3 mass % in total. It is preferable that the copper alloy further contains 0.2 to 0.75 mass % Sn.

Low resistance electrical conductor

Described herein are improved configurations low loss electrical conductors. The designs for a conductive wire include several mutually insulated coaxial conducting shells. The shells extend through the length of the conductive wire with each successive outer shell completely covering each inner shell. The distribution and size of each may be optimized for frequency, current loads and other parameters to increase the effective cross section of the effective conductor wire. The proposed structures provide for a reduced effective resistance for oscillating currents of frequencies of 1 MHz or more.

Copper alloy sheet material having a low young's modulus and method of producing the same

{Problems} To provide a copper alloy material, having a low Young's modulus that is required of electrical or electronic parts, such as connectors. {Means to solve} A copper alloy sheet material for electrical or electronic parts, having an alloy composition containing any one or both of Ni and Co in an amount of 0.5 to 5.0 mass % in total, and Si in an amount of 0.2 to 1.5 mass %, with the balance being Cu and inevitable impurities, wherein the copper alloy sheet material has a 0.2% proof stress in the rolling direction of 500 MPa or more, an electrical conductivity of 30% IACS or more, a Young's modulus of 110 GPa or less, and a factor of bending deflection of 105 GPa or less.

Graphene nanoplatelet metal matrix

A metal matrix composite is disclosed that includes graphene nanoplatelets dispersed in a metal matrix. The composite provides for improved thermal conductivity. The composite may be formed into heat spreaders or other thermal management devices to provide improved cooling to electronic and electrical equipment and semiconductor devices.

ELECTRODE FOIL AND ORGANIC DEVICE

There are provided an electrode foil which has both the functions of a supporting base material and a reflective electrode and also has a superior thermal conductivity; and an organic device using the same. The electrode foil comprises a metal foil and a reflective layer provided directly on the metal foil. 1. An electrode foil comprising a metal foil and a reflective layer provided directly on the metal foil.2. The electrode foil according to for use as an anode or a cathode in an organic EL element or an organic solar cell.3. The electrode foil according to claim 1 , which is free from an insulating layer at least on or to the side of the reflective layer.4. The electrode foil according to claim 1 , wherein an outermost surface on or to the side of the reflective layer is an ultra-smooth surface having an arithmetic average roughness Ra of 10.0 nm or less as measured in accordance with JIS B 0601-2001.5. The electrode foil according to claim 4 , wherein the arithmetic average roughness Ra is 3.0 nm or less.6. The electrode foil according to claim 1 , wherein the metal foil has a thickness of from 1 μm to 250 μm.7. The electrode foil according to claim 1 , wherein the metal foil is a nonmagnetic metal foil.8. The electrode foil according to claim 1 , wherein the metal foil is a copper foil.9. The electrode foil according to claim 1 , wherein the reflective layer is at least one selected from the group consisting of an aluminum film claim 1 , an aluminum alloy film claim 1 , a silver film claim 1 , and a silver alloy film.10. The electrode foil according to claim 1 , wherein the reflective layer is an aluminum film or an aluminum alloy film claim 1 , wherein the aluminum film or the aluminum alloy film comprises a laminate structure composed of two or more layers separated from each other by an interface claim 1 , and wherein the two or more layers have crystal orientations different from each other across the interface.11. The electrode foil according to claim 1 , ...

Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS, AND METHOD OF MANUFACTURING SAME

Disclosed is a Cu—Co—Si-based copper alloy for electronic materials, which is capable of achieving high levels of strength, electrical conductivity, and also anti-setting property; and contains 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities; wherein out of second phase particles precipitated in the matrix a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×10to 1×10particles/mm, and a ratio of the number density of particles having particle size of 5 nm or larger and smaller than 10 nm relative to the number density of particles having particle size of 10 nm or larger and 50 nm or smaller is 3 to 6. 1. A copper alloy for electronic materials which contains 0.5 to 3.0% by mass of Co , 0.1 to 1.0% by mass of Si , optionally a maximum of 2.5% by mass of Ni , optionally a maximum of 0.5% by mass of Cr , optionally a maximum of 2.0% by mass in total of one or more selected from the group consisting of Mg , P , As , Sb , Be , B , Mn , Sn , Ti , Zr , Al , Fe , Zn and Ag , and the balance of Cu and inevitable impurities wherein out of second phase particles precipitated in the matrix of the alloy a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×10to 1×10particles/mm , and a ratio of the number density of particles having particle size of 5 nm or larger and smaller than 10 nm relative to the number density of particles having particle size of 10 nm or larger and 50 nm or smaller is 3 to 6.2. The copper alloy for electronic materials according to claim 1 ,{'sup': 12', '13', '11', '13, 'wherein the number density of second phase particles having particle sizes of 5 nm or larger and smaller than 10 nm is 2×10to 7×10, and the number density of second phase particles having particle sizes of 10 nm or larger and 50 nm or smaller is 3×10to 2×10.'}3. The copper alloy for electronic materials according to claim 1 , having an MBR/t ...

Carbon Nanotube Enhanced Conductors for Communications Cables and Related Communications Cables and Methods

A conductor for a communications cable includes an elongated metal wire and a metal sheet that includes a plurality of carbon nanotubes that at least partially surrounds the elongated metal wire. The metal wire may include copper, and the metal sheet may likewise include copper and may be welded to an outside surface of the metal wire to surround the metal wire. This conductor may be used in a variety of communications cables that carry high frequency signals.

Electrically conductive material and electronic device using same

An electrically conductive material used in the formation of heat-releasing filled via holes in an electronic component-incorporated multilayer circuit board with a heat radiation member, in which the electrically conductive material comprises metal particles as a conductive metal which is a mixture of a first conductive metal consisting of silver (Ag) or copper (Cu) and a second conductive metal consisting of tin (Sn), and a ratio of the atomicity of tin to the atomicity of silver or copper and tin is 27 to 40%, and an electronic device using the same.

PASTE COMPOSITION FOR ELECTRODE, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL

The present invention provides a paste composition for an electrode comprising a phosphorus-containing copper alloy particle, a tin-containing particle, a nickel-containing particle, a glass particle, a solvent, and a resin. 1. A paste composition for an electrode comprising a phosphorus-containing copper alloy particle , a tin-containing particle , a nickel-containing particle , a glass particle , a solvent , and a resin.2. The paste composition for an electrode according to claim 1 , wherein the phosphorus content of the phosphorus-containing copper alloy particle is from 6% by mass to 8% by mass.3. The paste composition for an electrode according to claim 1 , wherein the tin-containing particle is at least one selected from the group consisting of a tin particle and a tin alloy particle having a tin content of 1% by mass or more.4. The paste composition for an electrode according to claim 1 , wherein the nickel-containing particle is at least one selected from the group consisting of a nickel particle and a nickel alloy particle having a tin content of 1% by mass or more.5. The paste composition for an electrode according to claim 1 , wherein the glass particle has a glass softening point of 650° C. or less and a crystallization initiation temperature of more than 650° C.6. The paste composition for an electrode according to claim 1 , wherein the content of the tin-containing particle is from 5% by mass to 70% by mass when the total content of the phosphorus-containing copper alloy particle claim 1 , the tin-containing particle claim 1 , and the nickel-containing particle is 100% by mass.7. The paste composition for an electrode according to claim 1 , wherein the content of the nickel-containing particle is from 10% by mass to 60% by mass when the total content of the phosphorus-containing copper alloy particle claim 1 , the tin-containing particle claim 1 , and the nickel-containing particle is 100% by mass.8. The paste composition for an electrode according to ...

COATING AND ELECTRONIC COMPONENT

A coating is provided to a conductor, and has a layered structure of a palladium layer. The palladium layer has a crystal plane whose orientation rate is 65% or more. 1. A coating provided to a conductor , the coating comprising:a palladium layer having a crystal plane whose orientation rate is 65% or more.2. The coating according to claim 1 , wherein the crystal plane whose orientation rate is 65% or more is the (111) plane or (200) plane.3. The coating according to claim 1 , wherein the palladium layer contains phosphorus in a concentration ranging from 0.5% by mass to 2.5% by mass.4. The coating according to claim 2 , wherein the palladium layer contains phosphorus in a concentration ranging from 0.5% by mass to 2.5% by mass.5. The coating according to claim 1 , further comprising a gold layer on the opposite surface of the palladium layer to the conductor.6. The coating according to claim 1 , further comprising a metal underlayer between the palladium layer and the conductor.7. The coating according to claim 5 , further comprising a metal underlayer between the palladium layer and the conductor.8. The coating according to claim 6 , wherein the metal underlayer includes at least one metal selected from the group consisting of Ni claim 6 , Sn claim 6 , Fe claim 6 , Co claim 6 , Zn claim 6 , Rh claim 6 , Ag claim 6 , Pt claim 6 , An claim 6 , Pb claim 6 , and Bi.9. The coating according to claim 7 , wherein the metal underlayer includes at least one metal selected from the group consisting of Ni claim 7 , Sn claim 7 , Fe claim 7 , Co claim 7 , Zn claim 7 , Rh claim 7 , Ag claim 7 , Pt claim 7 , Au claim 7 , Pb claim 7 , and Bi.10. An electronic component comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a signal transfer unit including the coating according to ; and'}a conductor coated with the coating. Some aspects of the present invention relate to a coating provided to a conductor and an electronic component including a signal transfer unit having a ...

Secondary Alloyed 1N Copper Wires for Bonding in Microelectronics Devices

A secondary alloyed 1N copper wire for bonding in microelectronics contains one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.09 wt % and about 9.9 wt %. 1. A secondary alloyed 1N copper wire for bonding in microelectronics , wherein the wire comprises one or more corrosion resistance alloying materials selected from the group consisting of Ag , Ni , Pd , Au , Pt , and Cr , and wherein a total concentration of the corrosion resistance alloying materials is between about 0.99 wt % and about 9.9 wt %.2. The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Ag.3. The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Ni.4. The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 1.18 wt % to about 9.9 wt % Pd.5. The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Au.6. The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Pt.7. The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Cr.8. The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.1 wt % Ag and about 0.09 wt % to about 9.8 wt % Ni.9. The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.1 wt % Ag and about 0.09 wt % to about 9.8 ...

Alloyed 2N Copper Wires for Bonding in Microelectronics Devices

An alloyed 2N copper wire for bonding in microelectronics contains 2N copper and one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %. 1. An alloyed 2N copper wire for bonding in microelectronics , wherein the wire comprises 2N copper and one or more corrosion resistance alloying materials selected from the group consisting of Ag , Ni , Pd , Au , Pt , and Cr , and wherein a concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %.2. The alloyed 2N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.009 wt % to about 0.99 wt % Ag.3. The alloyed 2N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.009 wt % to about 0.99 wt % Ni.4. The alloyed 2N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.009 wt % to about 0.129 wt % Pd.5. The alloyed 2N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.009 wt % to about 0.99 wt % Au.6. The alloyed 2N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.009 wt % to about 0.99 wt % Pt.7. The alloyed 2N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.009 wt % to about 0.99 wt % Cr.8. The alloyed 2N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.07 wt % Ag and about 0.009 wt % to about 0.89 wt % Ni.9. The alloyed 2N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.07 wt % Ag and about 0.009 wt % to about 0.89 wt % Pd.10. The alloyed 2N copper wire according to ...

COPPER POWDER, COPPER PASTE AND METHOD FOR PREPARING COPPER POWDER

Disclosed herein are copper powder, a copper paste and a method for preparing a copper powder. The copper powder is provided with a cuprous oxide film having a loose structure on a surface of the copper powder, thereby preventing the copper particles from being naturally oxidized, making it possible to being subjected to a low temperature firing process and having improved conductivity. 1. A copper powder comprisinga copper particle and a cuprous oxide film formed on a surface of the copper particle.2. The copper powder according to claim 1 , wherein the copper powder has a diameter of 0.1 to 10 μm claim 1 , andthe cuprous oxide film has 5 to 20 wt % based on the weight of the copper powder.3. The copper powder according to claim 1 , wherein the cuprous oxide film has a thickness which is 2 to 10% the diameter of the copper powder.4. A copper powder comprisinga cuprous copper film sealing an overall surface of the copper particle so as to block it from external air.5. A copper paste comprising a copper powder having a cuprous oxide film formed on a surface of a copper particle claim 1 , a binder claim 1 , and a solvent.6. A method for preparing a copper powder comprising:preparing a first solution by putting copper particles into aqueous alkaline solution, followed by stirring;preparing a second solution by putting fatty acid into the first solution; andforming a cuprous oxide film on a surface of each of the copper particles by isolating and purifying the copper particles from the second solution and then leaving the copper particles in the air.7. The method according to claim 6 , wherein the copper powder has a diameter of 0.1 to 10 μm.8. The method according to claim 6 , wherein the cuprous oxide film has 5 to 20 wt % based on the weight of the copper powder.9. The method according to claim 6 , wherein in the forming of the cuprous oxide film claim 6 , the cuprous oxide film has a thickness which is 2 to 10% the diameter of the copper powder.10. A method of ...

SUPER INTEGRATED CIRCUIT CHIP SEMICONDUCTOR DEVICE

The CP555 Super Integrated Circuit Chip has a ceramic package casing made from (B4-C) Boron Carbide: a non-conducting ceramic material. The IC is connected to connector pins by microcircuits and a custom formulated bond wire. The CP555 Integrated Circuit's ceramic Boron Carbide (B4-C) outer package casing, Heterodiamond substrates and dielectric components allows these integrated circuits to reduce electro-migration to a minimum, produce superior radiation hardness, heat resistance, electromagnetic shielding, and resistance to damage from harsh elements and environments. The CP555 Integrated Circuit can be used as a CMOS, PIC or DIE microcontroller circuit or computer processor (CPU). , shows the integrated circuit package the outer package casing also in , top left. Together, the Heterodiamond (B-C-N) semiconductor substrate and dielectric components, combined with a (Cu—Au—Ag) custom formulated bond wire work synergistically to make The CP555 Super Integrated Circuit Chip a unique semiconductor device. 1. This type of semiconductor device consist of a ceramic package containing B4-C Boron carbide , a ceramic material which is obtained by decomposing B2O3 with carbon in an electric furnace , it's unique and exceptional qualities produce superior radiation hardness , heat resistance , electromagnetic shielding , and resistance to damage from harsh elements and environments.2. Heterodiamond , symbol B-C-N , is used as a substrate material in this type of integrated circuit , this semiconductor substrate , because of Heterodiamond's unique semiconductor electrical behavior , between that of a conductor and an insulator at room temperature; with the proper addition of dopant element (silicon and Gallium) , p-n junctions can be formed on Heterodiamond and can be useful to electronic components and integrated circuits that are built from p-n junctions; Heterodiamond is a super-hard compound of boron , carbon , and nitrogen.3. A bonding wire for this type of semiconductor ...

Cu-Co-Si-BASED ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURING THE SAME

A Cu—Co—Si-based alloy that has even mechanical properties and that is provided with favorable mechanical and electrical properties as a copper alloy for an electronic material is provided. The copper alloy for an electronic material comprises 0.5% by mass to 3.0% by mass of Co, 0.1% by mass to 1.0% by mass of Si, and the balance Cu with inevitable impurities. An average grain size is in the range of 3 μm to 15 μm and an average difference between a maximum grain size and a minimum grain size in every observation field of 0.05 mmis 5 μm or less. 1. A copper alloy for an electronic material , the copper alloy comprising 0.5% by mass to 3.0% by mass of Co , 0.1% by mass to 1.0% by mass of Si , and the balance Cu with inevitable impurities ,{'sup': '2', 'wherein an average grain size is in the range of 3 μm to 15 μm and an average difference between a maximum grain size and a minimum grain size in every observation field of 0.05 mmis 5 μm or less.'}2. The copper alloy for the electronic material according to claim 1 , the copper alloy further comprising Cr in an amount of up to 0.5% by mass.3. The copper alloy for the electronic material according to claim 1 , the copper alloy further comprising one or two or more selected from Mg claim 1 , Mn claim 1 , Ag claim 1 , and P in total in an amount of up to 0.5% by mass.4. The copper alloy for the electronic material according to claim 1 , the copper alloy further comprising one or two selected from Sn and Zn in total in an amount of up to 2.0% by mass.5. The copper alloy for the electronic material according to claim 1 , the copper alloy further comprising one or two or more selected from Ni claim 1 , As claim 1 , Sb claim 1 , Be claim 1 , B claim 1 , Ti claim 1 , Zr claim 1 , Al claim 1 , and Fe in total in an amount of up to 2.0% by mass.6. A method of manufacturing the copper alloy according to claim 1 , the method comprising:a step 1 in which an ingot having a desired composition is melted and cast;a step 2 in which ...

BONDING STRUCTURE OF MULTILAYER COPPER BONDING WIRE

A bonding structure of a ball-bonded portion is obtained by bonding a ball portion formed on a front end of a multilayer copper bonding wire. The multilayer copper bonding wire includes a core member that is mainly composed of copper, and an outer layer that is formed on the core member and is mainly composed of at least one noble metal selected from a group of Pd, Au, Ag and Pt. Further, a first concentrated portion of such noble metal(s) is formed in a ball-root region located at a boundary with the copper bonding wire in a surface region of the ball-bonded portion. 1. A bonding structure of a ball-bonded portion obtained by bonding to a bonding-target portion a ball portion formed on a front end of a multilayer copper bonding wire , whereinsaid multilayer copper bonding wire comprises:a core member mainly composed of copper; andan outer layer formed on said core member and mainly composed of at least one noble metal selected from the group of Pd, Au, Ag and Pt, whereinsaid bonding structure comprises a first concentrated portion in which said at least one noble metal is highly concentrated, said first concentrated portion being formed in a ball-root region, said ball-root region being in such a surface region of said ball-bonded portion as is located at a boundary with said multilayer copper bonding wire.2. The bonding structure according to claim 1 , wherein a total concentration of said at least one noble metal in said first concentrated portion is not lower than 0.05 mol % and not higher than 6 mol %.3. The bonding structure according to claim 1 , wherein a thickness of said first concentrated portion formed in said ball-root region is not less than 1% and not more than 50% of a wire diameter claim 1 , when observed on a cross section of said ball-bonded portion taken along a plane orthogonal to a bonded interface between said ball-bonded portion and said bonding-target portion.4. The bonding structure according to claim 1 , wherein a total area of said first ...

COPPER-COBALT-SILICON ALLOY FOR ELECTRODE MATERIAL

Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5≦Co/Si≦5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm. 1. A copper alloy for electronic material comprising 0.5 to 3.0% by mass of Co , 0.1 to 1.0% by mass of Si , and the balance of Cu and inevitable impurities , having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5≦Co/Si≦5.0 , having an average particle size of second phase particles , within the range of the particle size of 1 to 50 nm seen in a cross-section taken in parallel with the direction of rolling , of 2 to 10 nm , and having an average distance between the adjacent second phase particles of 10 to 50 nm.2. The copper alloy for electronic material according to claim 1 , wherein the average crystal grain size seen in a cross-section taken in parallel with the direction of rolling is 3 to 30 μm.3. The copper alloy for electronic material according to claim 1 , further comprising at least any one alloying element selected from the group consisting of Ni claim 1 , Cr claim 1 , Sn claim 1 , P claim 1 , Mg claim 1 , Mn claim 1 , Ag claim 1 , As claim 1 , Sb claim 1 , Be claim 1 , B claim 1 , Ti claim 1 , Zr claim 1 , Al and Fe claim 1 , and claim 1 , with a total content of the alloying element(s) of 2.0% by mass or less.4. (canceled)5. (canceled)6. The copper alloy for electronic material according to claim 2 , further comprising at least any one alloying element selected from the group consisting of Ni claim 2 , ...

METHOD AND APPARATUS FOR MANUFACTURING METAL MATERIAL AND METAL MATERIAL

The present invention provides a method for manufacturing a metal material. The method comprises a temperature increasing step of increasing the temperature of a silver material having undergone final plastic working to 700° C. or more and less than a melting point of the silver material in a vacuum or a helium gas atmosphere, a heating step of maintaining the silver material at 700° C. or more and less than the melting point, and a cooling step of cooling the silver material to room temperature in a vacuum or a helium gas atmosphere. For a part of the period of the heating step, the silver material is heated in a mixed atmosphere in which hydrogen gas is mixed with helium gas. 1. A method for manufacturing a metal material , comprising:a temperature increasing step of increasing the temperature of a silver material having undergone final plastic working to 700° C. or more and less than a melting point of the silver material in a vacuum or a helium gas atmosphere;a heating step of maintaining the silver material at 700° C. or more and less than the melting point; anda cooling step of cooling the silver material to room temperature in a vacuum or a helium gas atmosphere,wherein, for a part of the period of the heating step, the silver material is heated in a mixed atmosphere in which hydrogen gas is mixed with helium gas.2. The method for manufacturing a metal material according to claim 1 ,wherein, during the heating step, atmosphere exchange is repeated three times or more, in which a vacuum atmosphere is created in an area surrounding the silver material by evacuation and then helium gas and hydrogen gas are supplied to create the mixed atmosphere.3. The method for manufacturing a metal material according to claim 1 ,wherein the time for the cooling step is at least twice the total time of the time for the temperature increasing step and the time for the heating step.4. A method for manufacturing a metal material claim 1 , comprising:a temperature increasing step ...

NEW ELECTRICAL CONDUCTOR FOR ATTACHING SILICON WAFERS IN PHOTOVOLTAIC MODULES

The invention relates to an electrical conductor () having a longitudinal axis (A) parallel to the rolling direction of a conductor wire, comprising copper material and an attachment surface () configured for attaching to a receiving surface of a silicon wafer () to establish an electrical connection. The copper material has a purity of at least 99.5% wherein the grains have a cubic texture comprising a set of cubic axes directed within an up to 20 degree angular range to the longitudinal axis (A), and whereby at least 65% of the grains have said cubic texture. The invention also relates to a process for manufacturing conductor () and photo voltaic modules comprising said conductor (), and silicon wafers. 1227332. An elongated electrical conductor () having a longitudinal axis (A) essentially parallel to the rolling direction of a conductor wire , which conductor () comprises of copper material , an attachment surface () configured to be attached to a receiving surface of a silicon wafer () to establish an electrical connection between the silicon wafer () and the electrical conductor () , characterized in that the copper material is present at a purity of at least 99.5% , and wherein the grains have a cubic texture comprising a set of cubic axes directed within an up to 20 degree angular range to the longitudinal axis (A) , and whereby at least 65% of the grains have said cubic texture.22. The electrical conductor () according to claim 1 , characterized in that the copper material has a purity of at least 99.9%.32. The electrical conductor () according to claim 1 , characterized in that 70 to 100% of the grains have the cubic texture.42. The electrical conductor () according to claim 1 , characterized in that the set of cubic axes are directed within a 15 degree angular range to the longitudinal axis (A).52. The electrical conductor () according to claim 1 , characterized in that the set of cubic axes are directed within a 10 degree angular range to the ...

ELECTROCONDUCTIVE MATERIAL FOR CONNECTION COMPONENT

An electroconductive material for a connection component have a base member made of a copper alloy plate, a Ni coating layer, a Cu—Sn alloy coating layer, and a Sn coating layer. A surface of the material is subjected to reflow treatment. The base member surface is roughened. The Cu—Sn alloy coating layer is partially exposed from the outside surface of the Sn coating layer. Regions of the Cu—Sn alloy coating layer exposed to the outside surface of the Sn coating layer have random microstructures distributed irregularly between portions of the Sn coating layer and streak microstructures extending in parallel to a rolled direction of the base member. The streak microstructures having a length of 50 μm or more and a width of 10 μm or less are contained in a number of 35 or more per 1 mm. 1. An electroconductive material for a connection component , comprising a base member made of a copper alloy plate , a Cu—Sn alloy coating layer formed on the base member and having a Cu content of 20 to 70% by atom and an average thickness of 0.2 to 3.0 μm , and a Sn coating layer formed on the Cu—Sn alloy coating layer having an average thickness of 0.2 to 5.0 μm ,wherein a surface of the material is subjected to reflow treatment and has an arithmetic average roughness Ra of 0.15 μm or more in one or more direction(s) along the surface and an arithmetic average roughness Ra of 3.0 μm or less in all directions along the surface,wherein the Cu—Sn alloy coating layer is formed to so as to be partially exposed from the outside surface of the Sn coating layer, the area ratio of the exposed surface of the Cu—Sn alloy coating layer to the material surface being 3 to 75%, and the Cu—Sn alloy coating layer having an average material surface exposed region interval of 0.01 to 0.5 mm in one or more direction(s) along the surface,characterized in that regions of the Cu—Sn alloy coating layer exposed from the outside surface of the Sn coating layer have random microstructures distributed ...

Cu-Ni-Si-Co COPPER ALLOY FOR ELECTRONIC MATERIALS AND MANUFACTURING METHOD THEREOF

Cu—Ni—Si—Co copper alloy strip having excellent balance between strength and electrical conductivity which can prevent the drooping curl is provided. The copper alloy strip for an electronic materials contains 1.0-2.5% by mass of Ni, 0.5-2.5% by mass of Co, 0.3-1.2% by mass of Si, and the remainder comprising Cu and unavoidable impurities, wherein the copper alloy strip satisfies both of the following (a) and (b) as determined by means of X-ray diffraction pole figure measurement based on a rolled surface: (a) among a diffraction peak intensities obtained by β scanning at α=20° in a {200} pole figure, a peak height at β angle 145° is not more than 5.2 times that of standard copper powder; (b) among a diffraction peak intensities obtained by β scanning at α=75° in a {111} pole figure, a peak height at β angle 185° is not less than 3.4 times that of standard copper powder. 1. A copper alloy strip for an electronic materials containing 1.0-2.5% by mass of Ni , 0.5-2.5% by mass of Co , 0.3-1.2% by mass of Si , and the remainder comprising Cu and unavoidable impurities , wherein the copper alloy strip satisfies both of the following (a) and (b) as determined by means of X-ray diffraction pole figure measurement based on a rolled surface:(a) among diffraction peak intensities obtained by β scanning at α=20° in a {200} pole figure, a peak height at β angle 145° is not more than 5.2 times that of standard copper powder;(b) among diffraction peak intensities obtained by β scanning at α=75° in a {111} pole figure, a peak height at β angle 185° is not less than 3.4 times that of standard copper powder.2. The copper alloy strip according to claim 1 , wherein a measurement of drooping curl in a direction parallel to a rolling direction is not more than 35 mm.3. The copper alloy strip according to claim 1 , wherein Ni content [Ni] (% by mass) claim 1 , Co content [Co] (% by mass) and 0.2% yield strength YS (MPa) satisfy a relationship expressed by the following formula (i): −11 ...

Electrical Conductor for Transporting Electrical Energy and Corresponding Production Method

An electrical conductor for transmission of electrical power, having a total cross-section equal to or above 10 mm 2 and comprising a plurality of stranded filamentary members, where at least one of the filamentary members is made from microalloyed copper or microalloyed aluminium having annealing temperatures higher than 250° C., and has the side surface thereof totally coated with a fluorinated polymer. The conductor has a better behavior relative to the skin effect and allows operation at high temperatures. Furthermore, if the electrical conductor is suspended, it has a smaller sag and prevents or reduces the accumulation of ice and/or snow.

COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE

A copper alloy for an electric device contains Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities. A method of producing a copper alloy includes: performing heating of a copper material to a temperature of not lower than 500° C. and not higher than 1000° C.; performing quenching to cool the heated copper material to 200° C. or lower with a cooling rate of 200° C./min or more; and performing working of the cooled copper material, wherein the copper material is composed of a copper alloy containing Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less. 1. A copper alloy for an electric device containing Mg in a range of 1.3 atomic % or more and less than 2.6 atomic % , Al in a range of 6.7 atomic % or more and 20 atomic % or less , and the balance substantially consisting of Cu and unavoidable impurities.2. The copper alloy for an electronic device according to the claim 1 , further containing one or more selected from Zn claim 1 , Sn claim 1 , Si claim 1 , Mn claim 1 , and Ni in an amount of 0.05% atomic % or more and 5 atomic % or less.3. The copper alloy for an electronic device according to claim 1 , further containing one or more selected from B claim 1 , P claim 1 , Zr claim 1 , Fe claim 1 , Co claim 1 , Cr claim 1 , Ag claim 1 , Ca claim 1 , and rare earth elements in an amount of 0.01% atomic % or more and 1 atomic % or less.4. The copper alloy for an electronic device according to claim 1 , wherein yield strength σat 0.2% is 400 MPa or more.5. The copper alloy for an electronic device according to claim 1 , wherein Young's modulus E is 125 GPa or less.6. The copper alloy for an electronic device according to claim 1 , wherein average number of intermetallic compounds having a particle diameter of 0.1 μm or more is 10/μmor less under the ...

Method for forming a copper wiring pattern

There is provided a method wherein a surface treating agent, which is essential for making copper particles antioxidative and dispersing the copper particles in the prior art, is hardly used, but copper particles, which cause little electromigration and are small in the price rate of material itself, are used to form a low-resistance copper wiring pattern while the generation of cracks therein is restrained. The method includes the step of using a dispersion slurry wherein copper based particles having a copper oxide surface are dispersed to form any pattern over a substrate, and the step of reducing the copper oxide surface of the copper based particles in the pattern with atomic form hydrogen to return the oxide to copper, and sintering particles of the copper metal generated by the reduction and bonding the particles to each other.

SURFACE-TREATED COPPER FOIL

An object of the present invention is to provide a copper foil excellent in softening resistance performance which reduces decrease in tensile strength after heat treatment at about 350° C. to 400° C. In order to achieve the object, a surface-treated copper foil provided with a rust-proofing treatment layer on both surfaces of a copper foil in which a rust-proofing treatment layer is constituted by zinc alloy, and the either rust-proofing treatment layer is a zinc alloy layer having zinc amount of 20 mg/mto 1,000 mg/m; and the copper foil contains one or two or more of small amount elements selected from carbon, sulfur, chlorine and nitrogen, and a sum amount thereof is 100 ppm or more is adopted. 1. A surface-treated copper foil provided with a rust-proofing treatment layer on both surfaces of a copper foil ,{'sup': 2', '2, 'wherein the rust-proofing treatment layer is constituted by zinc alloy, and the either rust-proofing treatment layer is a zinc alloy layer having zinc amount of 20 mg/mto 1,000 mg/m; and'}wherein the copper foil contains one or two or more of small amount elements selected from carbon, sulfur, chlorine and nitrogen, and a sum amount thereof is 100 ppm or more.2. The surface-treated copper foil according to claim 1 , a sum amount of zinc constituting the zinc alloy layers provided on both surfaces of the copper foil is 40 mg/mto 2 claim 1 ,000 mg/m.3. The surface-treated copper foil according to claim 1 , wherein the zinc alloy layer as the rust-proofing treatment layer is composed of a zinc-copper alloy having a zinc amount of 40 mass % or more or a zinc-tin alloy.4. The surface-treated copper foil according to claim 3 , wherein in the case employing the zinc-tin alloy to comprise the zinc alloy layer claim 3 , tin amount in the zinc alloy layer is 1 mg/mto 200 mg/m.5. The surface-treated copper foil according to claim 1 , the copper foil is an electro-deposited copper foil having a grain size as received of 1.0 μm or less.6. The surface- ...

Connection plate for battery terminals and method for manufacturing connection plate for battery terminals

A connection plate for battery terminals capable of inhibiting a base and a battery terminal connection portion from being detached from each other is provided. This connection plate for battery terminals ( 2 ) includes a battery terminal connection portion ( 4 ) fitted into a second hole ( 31 ) of a base ( 3 ) made of first metal, including a hole for connection ( 42 ) into which a second battery terminal ( 1 b ) is inserted and a flange portion ( 4 b ), while the battery terminal connection portion is constituted by at least a first layer ( 40 ) made of second metal, arranged on a side opposite to the base and a second layer ( 41 ) made of third metal, arranged between the base and the first layer

Copper alloy and process for producing copper alloy

To provide a copper alloy of the FCC structure containing Ni: 3.0 to 29.5 mass %, Al: 0.5 to 7.0 mass %, and Si: 0.1 to 1.5 mass %, with the remainder consisting of Cu and incidental impurities, wherein the copper alloy is of the high strength, but is excellent in workability, and has high electrical conductivity, and can control property thereof, by precipitating a γ′ phase of the L1 2 structure including Si at an average particle diameter of 100 nm or less in a parent phase of the copper alloy.

TIN-PLATED COPPER-ALLOY MATERIAL FOR TERMINAL AND METHOD FOR PRODUCING THE SAME

Tin-plated copper-alloy material for terminal in which: a CuSn alloy layer/a NiSn alloy layer/a Ni or Ni alloy layer are formed between a Sn-based surface layer and a substrate made of Cu or Cu alloy; the CuSn alloy layer is a compound-alloy layer containing CuSnas a major proportion and a part of Cu in the CuSnis displaced by Ni; the NiSn alloy layer is a compound-alloy layer containing NiSnas a major proportion and a part of Ni in the NiSnis displaced by Cu; an average interval S of point peaks of the CuSn alloy layer is not less than 0.8 μm and not more than 2.0 μm; an average thickness of the Sn-based surface layer is not less than 0.2 μm and not more than 0.6 μm; an exposed-area rate of the CuSn alloy layer exposed at a surface of the Sn-based surface layer is not less than 1% and not more than 40%; an average of equivalent-circle diameter of the exposed portions of the CuSn alloy layer exposed at the surface of the Sn-based surface layer is not less than 0.1 μm and not more than 1.5 μm; and dynamic friction coefficient is not more than 0.3. 1. A tin-plated copper-alloy material for terminal wherein:{'sub': 6', '5', '6', '5, 'a Sn-based surface layer is formed on a surface of a substrate made of Cu or Cu alloy, and a CuSn alloy layer/a NiSn alloy layer/a Ni or Ni alloy layer are formed in sequence from the Sn-based surface layer between the Sn-based surface layer and the substrate, the CuSn alloy layer is a compound-alloy layer containing CuSnas a major proportion and a part of Cu in the CuSnis displaced by Ni;'}{'sub': 3', '4', '3', '4, 'the NiSn alloy layer is a compound-alloy layer containing NiSnas a major proportion and a part of Ni in the NiSnis displaced by Cu;'}an average interval S of point peaks of the CuSn alloy layer is not less than 0 8 μm and not more than 2.0 μm;an average thickness of the Sn-based surface layer is not less than 0.2 μm and not more than 0.6 μm;an exposed-area rate of the CuSn alloy layer exposed at a surface of the Sn-based ...

Cu-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR PRODUCING THE SAME

A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder. 1. A copper alloy for electronic materials , comprising 0.5-2.5 mass % of Co , 0.1-0.7 mass % of Si , optionally containing less than 1.0 mass % of Ni , further optionally containing at most 2.0 mass % in total of at least one selected from the group consisting of Cr , Mg , P , As , Sb , Be , B , Mn , Sn , Ti , Zr , Al , Fe , Zn , and Ag , the balance Cu and inevitable impurities , wherein , from a result obtained from measurement of an X ray diffraction pole figure , using a rolled surface as a reference plane , a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder.2. The copper alloy according to claim 1 , wherein the copper alloy satisfies the following formulae:{'br': None, 'sup': 2', '2, '−55×(Co concentration)+250×(Co concentration)+520≧YS≧−55×Co concentration)+250×(Co concentration)+370, and\u2003\u2003Formula a{'br': None, '60×(Co concentration)+400≧Kb≧60×(Co concentration)+275,\u2003\u2003Formula bwherein these formulae, the unit of Co concentration is mass %, YS is 0.2% yield strength and Kb is spring limit.3. The copper alloy according to claim 1 , wherein YS is at least 500 MPa and Kb and YS satisfy the following relationship:{'br': None, '0.43×YS+215≧Kb≧0.23×YS+215,\u2003\u2003Formula cwherein YS is 0.2% yield strength, and Kb is spring limit.4. The copper alloy according to claim 1 , wherein the Co to Si mass concentration ratio (Co/Si) ...

STRIP OF Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND THE METHOD FOR PRODUCING THE SAME

Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied. (a) A diffraction peak height at β angle 120° among diffraction peak intensities by β scanning at α=25° in a {200} pole figure is at least 10 times that of standard copper powder.

SN-COATED COPPER ALLOY STRIP HAVING EXCELLENT HEAT RESISTANCE

A Sn-coated copper alloy strip including a surface coating layer containing a Ni layer, a Cu—Sn intermetallic compound layer, and a Sn layer formed in this order over the surface of a base material containing a copper alloy strip, in which an average thickness of the Ni layer is from 0.1 to 3.0 μm, an average thickness of the Cu—Sn intermetallic compound layer is from 0.02 to 3.0 μm, an average thickness of the Sn layer is from 0.01 to 5.0 μm, and the Cu—Sn intermetallic compound layer contains only an η-phase or the η-phase and an ε-phase. 1. A Sn-coated copper alloy strip having excellent heat resistance including a surface coating layer comprising a Ni layer , a Cu—Sn intermetallic compound layer , and a Sn layer formed in this order over the surface of a base material comprising a copper alloy strip , in which an average thickness of the Ni layer is 0.1 to 3.0 μm , an average thickness of the Cu—Sn intermetallic compound layer is 0.2 to 3.0 μm , an average thickness of the Sn layer is 0.01 to 5.0 μm , and the Cu—Sn intermetallic compound layer comprises an η-phase.2. A Sn-coated copper alloy strip having excellent heat resistance including a surface coating layer comprising a Ni layer , a Cu—Sn intermetallic compound layer , and a Sn layer formed in this order over the surface of a base material comprising a copper alloy strip , in which an average thickness of the Ni layer is 0.1 to 3.0 μm , an average thickness of the Cu—Sn intermetallic compound layer is 0.2 to 3.0 μm , an average thickness of the Sn layer is 0.01 to 5.0 μm , the Cu—Sn intermetallic compound layer comprises an ε-phase and an η-phase , the ε-phase is present between the Ni layer and the η-phase , and a ratio of an average thickness of the ε-phase to an average thickness of the Cu—Sn intermetallic compound layer is 30% or less.3. The Sn-coated copper alloy strip having excellent heat resistance according to claim 2 , whereina ratio of a length of the ε-phase to a length of the Ni layer in the ...

Copper alloy for electronic/electric device, copper alloy thin plate for electronic/electric device, method of producing copper alloy for electronic/electric device, conductive component for electronic/electric device and terminal

What is provided is a copper alloy for electronic/electric device comprising: in mass %, more than 2% and 36.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.10% of Fe; 0.005% or more and 0.10% or less of P; and the balance Cu and inevitable impurities, wherein a content ratio of Fe to Ni, Fe/Ni satisfies 0.002≦Fe/Ni<1.5, a content ratio of a sum of Ni and Fe, (Ni+Fe), to P satisfies 3<(Ni+Fe)/P<15, a content ratio of Sn to a sum of Ni and Fe, (Ni+Fe) satisfies 0.3<Sn/(Ni+Fe)<5, an average crystal grain diameter of α phase containing Cu, Zn, and Sn is in a range of 0.1 to 50 μm, and the copper alloy includes a precipitate containing P and one or more elements selected from Fe and Ni.

COPPER ALLOY FOR ELECTRONIC DEVICES, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICES, COPPER ALLOY PLASTIC WORKING MATERIAL FOR ELECTRONIC DEVICES, AND COMPONENT FOR ELECTRONIC DEVICES

An aspect of this copper alloy contains: Mg at a content of 3.3 at % or more to less than 6.9 at %; and either one or both of Cr and Zr at respective contents of 0.001 at % to 0.15 at %, with the balance being Cu and inevitable impurities, wherein when the content of Mg is represented by A at %, a conductivity σ (% IACS) satisfies the following Expression (1), 1. A copper alloy for electronic devices , comprising: Mg at a content of 3.3 at % or more to less than 6.9 at %; and either one or both of Cr and Zr at respective contents of 0.001 at % to 0.15 at % , with the balance being Cu and inevitable impurities , {'br': None, 'i': ×A', '×A+, 'sup': '2', 'σ≦{1.7241/(−0.0347+0.65691.7)}×100 \u2003\u2003(1).'}, 'wherein when the content of Mg is represented by A at %, a conductivity σ (% IACS) satisfies the following Expression (1)2. The copper alloy for electronic devices according to claim 1 ,{'sub': '0.2', "wherein a Young's modulus E is in a range of 125 GPa or less, and a 0.2% proof stress σis in a range of 400 MPa or greater."}3. The copper alloy for electronic devices according to claim 1 ,wherein an average crystal grain size is in a range of 20 μm or less.4. A method for producing a copper alloy for electronic devices claim 1 , the method comprising:heating a copper material that comprises: Mg at a content of 3.3 at % or more to less than 6.9 at %; and either one or both of Cr and Zr at respective contents of 0.001 at % to 0.15 at %, with the balance being Cu and inevitable impurities, to a temperature of 300° C. to 900° C.;rapidly cooling the heated copper material to a temperature of 200° C. or lower at a cooling rate of 200° C./min or greater; andsubjecting the rapidly cooled copper material to working,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the copper alloy for electronic devices according to is produced.'}5. A plastically-worked copper alloy material for electronic devices claim 1 , comprising the copper alloy for electronic devices ...

Cu-Ni-Si-BASED COPPER ALLOY SHEET HAVING EXCELLENT MOLD ABRASION RESISTANCE AND SHEAR WORKABILITY AND METHOD FOR MANUFACTURING SAME

A Cu—Ni—Si-based copper alloy sheet of the invention has excellent mold abrasion resistance and shear workability while maintaining strength and conductivity, in which 1.0 mass % to 4.0 mass % of Ni is contained, 0.2 mass % to 0.9 mass % of Si is contained, the remainder is made up of Cu and inevitable impurities. The number of the Ni—Si precipitate particles having a grain diameter in a range of 20 nm to 80 nm in a surface layer that is as thick as 20% of the entire sheet thickness from the surface is represented by a particles/mm, and the number of the Ni—Si precipitate particles having a grain diameter in a range of 20 nm to 80 nm in a portion below the surface layer is represented by b particles/mm, a/b is in a range of 0.5 to 1.5. 1. A Cu—Ni—Si-based copper alloy sheet having excellent mold abrasion resistance and shear workability , comprising:1.0 mass % to 4.0 mass % of Ni; and0.2 mass % to 0.9 mass % of Siwith a remainder made up of Cu and inevitable impurities,{'sup': 6', '2', '6', '2', '5', '2', '5', '2', '2', '2, 'wherein the number of Ni—Si precipitate particles having a grain diameter in a range of 20 nm to 80 nm on a surface is in a range of 1.5×10particles/mmto 5.0×10particles/mm, the number of Ni—Si precipitate particles having a grain diameter of greater than 100 nm on the surface is in a range of 0.5×10particles/mmto 4.0×10particles/mm, in a case in which the number of the Ni—Si precipitate particles having a grain diameter in a range of 20 nm to 80 nm in a surface layer that is as thick as 20% of the entire sheet thickness from the surface is represented by a particles/mm, and the number of the Ni—Si precipitate particles having a grain diameter in a range of 20 nm to 80 nm in a portion below the surface layer is represented by b particles/mm, a/b is in a range of 0.5 to 1.5, and the concentration of Si forming a solid solution in crystal grains in an area that is less than 10 μm thickness from the surface is in a range of 0.03 mass % to 0.4 mass ...

CONDUCTIVE PASTE, METHOD FOR FORMING AN INTERCONNECTION AND ELECTRICAL DEVICE

According to embodiments of the present invention, a conductive paste is provided. The conductive paste has a cam-position including a plurality of conductive nanoparticles and a plurality of conductive nanowires, wherein a weight ratio of the plurality of conductive nanoparticles to the plurality of conductive nanowires is between about 10:1 and about 50:1. According to further embodiments of the present invention, a method for forming an interconnection and an electrical device are also provided. 1. A conductive paste having a composition comprising a plurality of conductive nanoparticles and a plurality of conductive nanowires , wherein a weight ratio of the plurality of conductive nanoparticles to the plurality of conductive nanowires is between 10:1 and 50:1.23.-. (canceled)4. The conductive paste as claimed in claim 1 , wherein each conductive nanoparticle of the plurality of conductive nanoparticles has a size of between 5 nm and 20 nm.5. The conductive paste as claimed in claim 1 , wherein each conductive nanowire of the plurality of conductive nanowires has a length of between 5 μm and 50 μm.6. The conductive paste as claimed in claim 1 , wherein the plurality of conductive nanowires have uniform length.7. The conductive paste as claimed in claim 1 , wherein each conductive nanowire of the plurality of conductive nanowires has a diameter of between 100 nm and 200 nm.8. (canceled)9. The conductive paste as claimed in claim 1 , wherein each conductive nanowire of the plurality of conductive nanowires has an aspect ratio of between 50 and 500.10. (canceled)11. The conductive paste as claimed in claim 1 , wherein the plurality of conductive nanowires comprise a metal and wherein the metal is selected from the group consisting of copper claim 1 , silver and gold.12. (canceled)13. The conductive paste as claimed in claim 1 , wherein the plurality of conductive nanoparticles and the plurality of conductive nanowires comprise copper.14. The conductive paste as ...

COPPER ALLOY AND COPPER ALLOY WIRE

A copper alloy having high strength and a high electrical conductivity in combination and a copper alloy wire are provided. A copper alloy contains 50 percent by mass or more and 95 percent by mass or less of Cu, 5 percent by mass or more and 50 percent by mass or less of Fe, and the remainder composed of deoxidizer elements and incidental impurities and has a texture exhibiting large diffraction peaks in the <111> orientation of Cu and in the <110> orientation of Fe when a cross-section is subjected to X-ray diffraction. The intensity ratio Iof the diffraction peak in the <111> orientation of Cu to the intensity of the whole diffraction lines of Cu is 0.70 or more and 1.0 or less and the intensity ratio Iof the diffraction peak in the <110> orientation of Fe to the intensity of the whole diffraction lines of Fe is 0.90 or more and 1.0 or less. This copper alloy has a high electrical conductivity of 50% IACS or more in spite of high strength by controlling the orientation property in such a way that the above-described specific texture is established. 1. A copper alloy , comprising:a composition being 50 percent by mass or more and 95 percent by mass or less of Cu, 5 percent by mass or more and 50 percent by mass or less of Fe, and the remainder composed of deoxidizer elements and incidental impurities; and{'sub': Cu(111)', 'Fe(110), 'a texture having the Iof 0.70 or more and 1.0 or less and the Iof 0.90 or more and 1.0 or less'}{'sub': 'Cu(111)', 'where the Irepresents the intensity ratio of the diffraction peak in the <111> orientation of Cu to the intensity of the whole diffraction lines of Cu and'}{'sub': 'Fe(110)', 'the Irepresents the intensity ratio of the diffraction peak in the <110> orientation of Fe to the intensity of the whole diffraction lines of Fe, when a cross-section is subjected to X-ray diffraction.'}2. The copper alloy according to claim 1 , wherein the Iis 0.75 or more.3. The copper alloy according to or claim 1 , wherein the Iis 0.90 or more.4 ...

COPPER ALLOY FOR ELECTRONIC/ELECTRIC DEVICE, COPPER ALLOY SHEET/STRIP MATERIAL FOR ELECTRONIC/ELECTRIC DEVICE, COMPONENT FOR ELECTRONIC/ELECTRIC DEVICE, TERMINAL, AND BUSBAR

A copper alloy includes, by mass %: Mg: 0.15%-0.35%; and P: 0.0005%-0.01%, with a remainder being Cu and unavoidable impurities, wherein [Mg]+20×[P]<0.5 is satisfied. Among the unavoidable impurities, H is 10 mass ppm or less, O is 100 mass ppm or less, S is 50 mass ppm or less, and C is 10 mass ppm or less. In addition, 0.20<(NF/(1−NF))≤0.45 is satisfied where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to a total grain boundary triple junctions is NF, and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is NF. 1. A copper alloy for electronic or electric devices , comprising:Mg in a range of 0.15 mass % or greater and less than 0.35 mass %; andP in a range of 0.0005 mass % or greater and less than 0.01 mass %,with a remainder being Cu and unavoidable impurities, {'br': None, '[Mg]+20×[P]<0.5,'}, 'wherein an amount of Mg [Mg] and an amount of P [P] in terms of mass ratio satisfy a relationan amount of H is 10 mass ppm or less, an amount of O is 100 mass ppm or less, an amount of S is 50 mass ppm or less, and an amount of C is 10 mass ppm or less, all of which are the unavoidable impurities, and{'sup': '2', 'a surface orthogonal to a rolling width direction is used as an observation surface, measurement regarding a matrix is performed on a measurement area of 10,000 μmor larger at every measurement intervals of 0.25 μm by an EBSD method, measured results are analyzed by data analysis software OIM to obtain a CI value in each measurement point, a measurement point in which a CI value is 0.1 or less is removed, a boundary having more than 15° of an orientation difference between neighboring measuring points is assigned as a grain boundary, a coincidence boundary in which a Σ value is 29 or less is defined as a ...

INSULATED CONDUCTORS

The invention relates to an insulated conductor comprising an elongate conductor provided with an insulating layer which comprises a polymeric material. Said polymeric material has a crystallinity of at least 25% and includes a repeat unit of general formula 2. A conductor according to claim 1 , wherein said crystallinity is at least 30%.3. A conductor according to claim 1 , wherein the crystallinity of said polymeric material is assessed at a first position on said insulating layer claim 1 , wherein said crystallinity is at least 30% at said first position; wherein the crystallinity of said polymeric material is assessed at a second position on said insulating layer claim 1 , wherein said crystallinity at said second position is at least 30%;wherein the crystallinity of said polymeric material is assessed at a third position on said insulating layer, wherein said crystallinity at said third position is at least 30%;wherein said first position is spaced from the third position by a distance of at least 10 m and said second position is spaced from the third position by a distance of at least 9 m.4. A conductor according to claim 1 , wherein said insulating layer extends along substantially the entirety of the elongate conductor.5. A conductor according to claim 1 , wherein the crystallinity of said polymeric material is at least 25% across substantially the entire extent of said insulating layer.6. A conductor according to claim 1 , wherein the crystallinity of said polymeric material across the extent of said insulating layer varies by less than 10%.7. A conductor according to claim 1 , wherein said insulting layer is devoid of areas wherein the crystallinity is less than 15%.8. A conductor according to claim 1 , wherein at least 90 wt % of said insulating layer comprises thermoplastic polymeric material.9. (canceled)10. (canceled)11. A conductor according to claim 1 , wherein said polymeric material is polyetheretherketone.12. A conductor according to claim 1 , ...

HIGH FREQUENCY SIGNAL TRANSMISSION CABLE

A high frequency signal transmission cable includes a conductor, an insulator provided over a periphery of the conductor, a plating layer provided over a periphery of the insulator, and a sheath provided over a periphery of the plating layer. A crack suppressing layer is provided between the insulator and the plating layer, in such a manner as to remain in contact with the insulator while being provided with the plating layer over an outer surface of the crack suppressing layer. The crack suppressing layer suppresses the occurrence of a cracking in the plating layer by bending while moving in a longitudinal direction of the cable relative to a bending of the insulator. 1. (canceled)2. The high frequency signal transmission cable according to claim 18 , wherein a thickness of the crack suppressing layer is less than a thickness of the insulator.3. The high frequency signal transmission cable according to claim 18 , wherein the crack suppressing layer has a thickness of 0.10 mm or more and 0.20 mm or less.4. The high frequency signal transmission cable according to claim 18 , wherein the plating layer comprises a metal having an electrical conductivity of 99% or more.5. The high frequency signal transmission cable according to claim 18 , wherein the plating layer has a thickness of 2 μm or more and 5 μm or less.6. The high frequency signal transmission cable according to claim 18 , wherein the conductor comprises a compressed stranded wire conductor comprising a plurality of wires stranded together and compressed to have a predetermined cross-sectional shape perpendicular to the longitudinal direction of the cable.7. The high frequency signal transmission cable according to claim 18 , wherein a melting point of a resin to be used in the crack suppressing layer is lower than a melting point of a resin to be used in the insulator.8. The high frequency signal transmission cable according to claim 18 , wherein the insulator comprises an irradiated cross-linked ...

Wavy metal nanowire network thin film, stretchable transparent electrode including the metal nanowire network thin film and method for forming the metal nanowire network thin film

A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.

MULTI-LAYER PREFORM SHEET

PROBLEM: To provide a multi-layer preform sheet capable of forming a highly reliable and high-quality electric interconnect, an electro-conductive bonding portion and so forth that are less likely to produce the Kirkendall void. 1the first layer being mainly composed of Sn or Sn alloy, and containing at least 2% by weight of an intermetallic compound of Cu and Sn,the first layer being intended for taking part in bonding,the second layer containing a first metal and a second metal,the first metal being Cu or Cu alloy, and the second metal being Sn or Sn alloy, andthe second metal being an alloy is a formed metal particle comprising an intermetallic compound dispersed in the metal particle and forming an outer shell structure on the metal particle.. A multi-layer preform sheet comprising at least a first layer and a second layer, This invention relates to a multi-layer preform sheet.First, the terms used in this specification will be defined as follows:(1) the term “metal”, “metal particle” or “metal component” is used for indicating not only a simple metal element, but also an alloy composed of two or more metal elements, a composite structure, or, a combination of them;(2) “nanometer” denotes a range of dimension below 1 μm (1000 nm); and(3) “metal matrix” denotes a metal or alloy that serves as a base material for filling up the gaps around, and supporting, other ingredients.In devices such as those kept operated at high temperatures for a long duration of time, and operated under harsh environments such as exposed to large temperature changes between operational states at high temperatures and idle states at low temperatures, represented by vehicle-borne power control devices (power devices), bonding portions are required to be able to keep high bonding strength over a long duration of time. None of the conventionally known bonding members has, however, been enough to satisfy such requirement.For example, a SnAgCu-based bonding member (powdery solder material) ...

Conductive Fibres

A method for making a fibre electrically conductive comprises the steps of: (a) providing a fibre having a negative electric charge at the surface of the fibre, (b) applying to the fibre a substance (such as a polyelectrolyte) which provides a layer of said substance on the fibre and changes the electric charge at the surface of the fibre from negative to positive, wherein said substance is not chitosan, and (c) making the surface of the fibre electrically conductive with a metal, wherein the metal of step (c) is provided in the form of metal ions and wherein a reducing agent (for example) is employed to reduce the metal ions to elemental metal. Fabrics formed from conductive fibres are also provided.

MULTI-CORE CABLE FOR VEHICLE

A multi-core cable for vehicle includes two power wires, two signal wires, two electric wires, and a sheath. The two power wires have the same size and are made of the same material. The two signal wires have the same size and are made of the same material, and a pair of the two signal wires is twisted and is configured a twisted pair of signal wires. The two electric wires have the same size and are made of the same material, and a pair of the electric wires is twisted and is configured as a twisted pair of electric wires. The two power wires, the twisted pair of signal wires and the twisted pair of electric wires are stranded. 16-. (canceled)7: A multi-core cable for vehicle comprising:two power wires each of which comprises a first conductor and a first insulating layer covering the first conductor,two signal wires each of which comprises a second conductor thinner than the first conductor and a second insulating layer covering the second conductor;two electric wires each of which comprises a third conductor thinner than the first conductor and a third insulating layer covering the third conductor; anda sheath covering the two power wires, the two signal wires and the two electric wires,wherein a pair of the signal wires is twisted and is configured as a twisted pair of signal wires,wherein a pair of the electric wires is twisted and is configured as a twisted pair of electric wires,wherein the two power wires, the twisted pair of signal wires and the twisted pair of electric wires are stranded, andwherein the twisted pair of electric wires is twisted in a same direction as the twisted pair of signal wires.8: The multi-core cable for vehicle according to claim 7 , wherein an outer diameter of each power wire is 75% to 135% of an outer diameter of each twisted pair of signal wires.9: The multi-core cable for vehicle according to claim 7 , wherein on a section perpendicular to a longitudinal direction of the multi-core cable claim 7 , centers of the two power wires ...

HIGH FREQUENCY CABLE, HIGH FREQUENCY COIL AND METHOD FOR MANUFACTURING HIGH FREQUENCY CABLE

A high frequency cable includes: a central conductor made from aluminum or an aluminum alloy; a covering layer made from copper covering the central conductor, and having a fiber-like structure in a longitudinal direction; and an intermetallic compound layer formed between the central conductor and the covering layer and having greater volume resistivity than the covering layer, wherein a cross-sectional area of the covering layer is 15% or less of an entire cross-sectional area including the central conductor, the intermetallic compound layer and the covering layer. 1covering a central conductor made from aluminum or an aluminum alloy with a covering layer made from copper; andwire drawing of the central conductor covered by the covering layer using dies at multiple steps, each of the dies having a cross-section reduction rate of 20% or higher, to form a fiber-like structure in a longitudinal direction in the covering layer, and to form an intermetallic compound layer having greater volume resistivity than the covering layer between the central conductor and the covering layer.. A method for manufacturing a high frequency cable, comprising: This is a Divisional of Ser. No. 13/624,395 filed Sep. 21, 2012, based off of a Continuation of Application of PCT Application No. PCT/JP2011/056984, filed on Mar. 23, 2011, and claims the benefit of priority from the prior Japanese Patent Application No. 2010-066793, filed on Mar. 23, 2010, the entire contents of which are incorporated herein by reference.The present invention relates to a high frequency cable and a high frequency coil, and particularly to a high frequency cable used as a winding wire, a litz wire, a cable and the like for various high frequency devices, and to a high frequency coil.In winding wires and feed cables of devices (such as a transformer, a motor, a reactor, induction heating equipment, a magnetic head assembly) in which a high frequency current flows, eddy-current losses are caused in conductors due ...

MULTI-DIELECTRIC COAXIAL PUSH-CABLES AND ASSOCIATED APPARATUS

Coaxial video push-cables are disclosed. One embodiment includes a central conductor and a multi-dielectric stack of multiple concentric tubular layers disposed around the central conductor having one or more structural layers and one or more impedance tuning layers where the thickness of materials of each layer are selected to provide a pre-defined elastic modulus and electromagnetic impedance, an electromagnetic shielding layer, and a jacket enclosing the shielding layer, multi-dielectric stack layers, and central conductor. 1. A coaxial video push-cable , comprising:a central conductor;a multi-dielectric stack of multiple concentric tubular layers disposed around the central conductor comprising one or more structural layers and one or more impedance tuning layers, wherein the thickness of materials of each layer is selected to provide a pre-defined elastic modulus and electromagnetic impedance;an electromagnetic shielding layer; anda jacket enclosing the shielding layer, multi-dielectric stack layers, and central conductor.2. The coaxial video push-cable of claim 1 , wherein the central conductor is dimensioned between one eighth and five eighths the diameter of a surrounding structural dielectric layer.3. The coaxial video push-cable of claim 1 , wherein the central conductor material comprises copper or a copper alloy.4. The coaxial video push-cable of claim 1 , wherein the central conductor material comprises copper-clad steel.5. The coaxial video push-cable of claim 1 , wherein the central conductor material comprises silver or a silver alloy.6. The coaxial video push-cable of claim 1 , wherein the one or more structural dielectric layers include one or more dielectric materials having a high elastic modulus to facilitate a user pushing a push-cable through pipes or other voids.7. The coaxial video push-cable of claim 1 , wherein one of the one or more structural dielectric layers comprise a fiberglass layer.8. The coaxial video push-cable of claim 1 , ...

Conductive Particle

A conductive particle is disclosed. The conductive particle includes an inner material including a first metal and an outer material surrounding the inner material. The outer material includes a second metal. An intermetallic compound is formed between the inner material and the outer material, the intermetallic compound having features from the inner material and the outer material. The conductive particle has a maximum dimension of less than 200 micrometers and the outer material has an outer material thickness of between 0.2 micrometers and 10 micrometers. The conductive particle is substantially devoid of silver. 1. A conductive particle , comprising:an inner material including a first metal; andan outer material surrounding the inner material, the outer material including a second metal;an intermetallic compound formed between the inner material and the outer material, the intermetallic compound having features from the inner material and the outer material;wherein the conductive particle has a maximum dimension of less than 200 micrometers;wherein the outer material has an outer material thickness of between 0.2 micrometers and 10 micrometers;wherein the conductive particle is substantially devoid of silver.2. The conductive particle of claim 1 , further comprising a third metal surrounded by the inner material.3. The conductive particle of claim 1 , wherein the first metal comprises copper.4. The conductive particle of claim 1 , wherein the first metal comprises aluminum.5. The conductive particle of claim 1 , wherein the second metal comprises tin.6. The conductive particle of claim 1 , wherein the second metal comprises copper.7. The conductive particle of claim 1 , wherein the outer material consists of cobalt or nickel.8. The conductive particle of claim 1 , wherein the intermetallic compound has an intermetallic thickness of between 0.2 micrometers and 5 micrometers.9. The conductive particle of claim 1 , wherein the conductive particle is heat-treated ...

METAL WIRE AND ELECTRIC WIRE

To provide a metal wire and an electric wire of high mechanical strength and high ductibility that have sufficiently increased ductibility as well as sufficiently increased mechanical strength. A metal wire manufactured at least by being subjected to an extension in which a metal wire is extended in an axial direction, and having a hardness distribution in which hardness decreases toward a specific peripheral portion from a central portion in a cross-section orthogonal to axis, whereby a softened peripheral portion becomes to show a good malleability as well as a high resistance to cracking, so as to attain an improvement of mechanical strength and ductibility. 1. A metal wire comprising a hardness distribution in which hardness decreases toward a specific peripheral portion in a specific radial direction from a central portion in a cross-section orthogonal to an axis , wherein the metal wire is manufactured at least by subjecting a metallic material to an extension in an axial direction.2. The metal wire according to claim 1 , wherein hardness of the specific peripheral portion decreases by equal to or more than 10% of hardness of the central portion at a circumferential surface side being beyond at least ½ of the radius from the center.3. The metal wire according to claim 1 , wherein hardness of an opposing peripheral portion that opposes to the specific peripheral portion in a radial direction with reference to the central portion falls within plus and minus 10% of the hardness of the central portion claim 1 , and the hardness of the opposing peripheral portion is higher than the hardness of the specific peripheral portion.4. The metal wire according to claim 2 , wherein hardness of an opposing peripheral portion that opposes to the specific peripheral portion in a radial direction with reference to the central portion falls within plus and minus 10% of the hardness of the central portion claim 2 , and the hardness of the opposing peripheral portion is higher ...

ROLLED COPPER FOIL, METHOD OF MANUFACTURING A ROLLED COPPER FOIL, FLEXIBLE FLAT CABLE, AND METHOD OF MANUFACTURING A FLEXIBLE FLAT CABLE

A rolled copper foil comprises one of copper and a copper alloy. The rolled copper foil has a rolled surface and two side surfaces adjacent to the rolled surface. Each of the side surfaces being a non-sheared surface that is not a sheared surface. An area ratio of crystal grains oriented at a deviation angle of less than or equal to 13° from Cube orientation is greater than or equal to 6%. 1. A rolled copper foil comprising one of copper and a copper alloy , the rolled copper foil having a rolled surface and two side surfaces adjacent to the rolled surface , each of the side surfaces being a non-sheared surface that is not a sheared surface ,an area ratio of crystal grains oriented at a deviation angle of less than or equal to 13° from Cube orientation being greater than or equal to 6%.2. The rolled copper foil according to claim 1 , wherein claim 1 , at two end regions each corresponding to 10%-width in a transverse direction claim 1 , an area ratio of crystal grains oriented at a deviation angle of less than or equal to 13° from Cube orientation is greater than or equal to 15%.3. The rolled copper foil according to claim 1 , wherein the rolled copper foil comprises a copper alloy comprising a total of greater than or equal to 0.005 mass % and less than or equal to 1.0 mass % of at least one element selected from Mg claim 1 , Zn claim 1 , Sn claim 1 , Ag claim 1 , P claim 1 , Cr claim 1 , Si claim 1 , Zr claim 1 , Ti claim 1 , and Fe claim 1 , the balance being copper and incidental impurities.4. The rolled copper foil according to claim 1 , wherein the rolled copper foil has a flex life cycle of 500 claim 1 ,000 cycles or more.5. The rolled copper foil according to claim 1 , wherein the rolled copper foil has a width of 0.300 mm to 2.000 mm and a thickness of 0.010 mm to 0.200 mm.6. A flexible flat cable comprising:a rolled copper foil including one of copper and a copper alloy, the rolled copper foil having a rolled surface and two side surfaces adjacent to the ...

Multi-core electric power metal conductive wire and method of manufacture thereof

A multi-core electric power metal conductive wire is manufactured according to the steps as follow: first, providing a plurality of solid conductive cores; next, providing a first conductive metal material with a first DC resistance to encase each conductive core to form a conductive strand; collecting and binding a plurality of conductive strands in one bundle; providing at least one sheet type second conductive metal material to encase the bundle of the conductive strands to form a conductive bus and form a connection seam between two side walls of the second conductive metal material not yet connected; forming an electric connection spot at the connection seam through a welding process; and finally providing an insulation encasing material to encase the conductive bus to finish the multi-core electric power metal conductive wire. The invention provides a simpler fabrication process and can reduce skin effect of the metal conductive wire.

COPPER PARTICLE, METHOD FOR PRODUCING COPPER PARTICLE, COPPER PASTE, SEMICONDUCTOR DEVICE, AND ELECTRICAL/ELECTRONIC COMPONENT

Copper particles coated with at least one kind of a nitrogen-containing compound selected from hydrazinoethanol and a hydrazinoethanol salt. 1. Copper particles coated with at least one kind of a nitrogen-containing compound selected from hydrazinoethanol and a hydrazinoethanol salt.2. A method for producing the copper particles according to claim 1 , comprising reducing a copper compound (A) with at least one kind of a nitrogen-containing compound selected from hydrazinoethanol and a hydrazinoethanol salt (B).3. The method for producing the copper particles according to claim 2 , the method further comprises adding hydrazine monohydrate (C).4. A copper paste comprising the copper particles according to .5. A semiconductor device bonded with the copper paste according to .6. An electric or electronic component bonded with the copper paste according to . The present disclosure relates to copper particles, a method for producing the copper particles, a copper paste using the copper particles, and a semiconductor device and an electric or electronic component produced with the copper paste.Associated with the enhancement of the capacity and processing speed of semiconductor products and the reduction of the line width thereof, there is a demand for treatment of heat generated during the operation of the semiconductor products, and a so-called thermal management for radiating heat from the semiconductor products is receiving attention. A method of attaching a heat radiating member, such as a heat spreader and a heatsink, to a semiconductor product, and the like method are being generally employed therefor, and the thermal conductivity of the material for adhering the heat radiating member is demanded to be higher.While depending on the configuration of the semiconductor product, a method of adhering a heat spreader directly to a semiconductor device or to a die pad portion of a lead frame having a semiconductor device adhered thereto, a method of imparting a function of ...

Copper alloy for electronic and electrical equipment, copper alloy plate strip for electronic and electrical equipment, component for electronic and electrical equipment, terminal, busbar, and movable piece for relay

A copper alloy for electronic and electrical equipment is provided, including: 0.15 mass % or greater and less than 0.35 mass % of Mg; 0.0005 mass % or greater and less than 0.01 mass % of P; and a remainder which is formed of Cu and unavoidable impurities, in which a conductivity is greater than 75% IACS, a content [Mg] (mass %) of Mg and a content [P] (mass %) of P satisfy a relational expression of [Mg]+20×[P]<0.5, and a content of H is 10 mass ppm or less, a content of O is 100 mass ppm or less, a content of S is 50 mass ppm or less, and a content of C is 10 mass ppm or less.

Rectangular rolled copper foil, flexible flat cable, rotary connector, and method of manufacturing rectangular rolled copper foil

A rectangular rolled copper foil includes copper or a copper alloy having a 0.2% yield strength of greater than or equal to 250 MPa. In a cross section perpendicular to a rolling direction, an area ratio of crystal grains oriented at a deviation angle of less than or equal to 12.5° from a Cube orientation is greater than or equal to 8%.

BASE

A base includes a main body and a multilayer metal film disposed on the main body. The multilayer metal film includes a first metal film disposed on the main body, the first metal film having conductivity, second metal film on the first metal film and above the main body, the second metal film having resistance to solder leaching, and a third metal film on the second metal film, the third metal film having wettability. The third metal film includes an inwardly extended portion extending between the second metal film and the main body. 1. A base , comprising:a main body; anda multilayer metal film disposed on the main body, a first metal film disposed on the main body, the first metal film having conductivity;', 'a second metal film on the first metal film and above the main body, the second metal film having resistance to solder leaching; and', 'a third metal film on the second metal film, the third metal film having wettability and including an inwardly extended portion extending between the second metal film and the main body., 'the multilayer metal film including2. The base according to claim 1 , whereinthe main body contains a magnetic metal powder, andan end edge of the inwardly extended portion is located on the magnetic metal powder below the second metal film.3. The base according to claim 1 , whereinthe inwardly extended portion has a thickness equal to or less than a portion of the third metal film other than the inwardly extended portion.4. The base according to claim 1 , further comprising:a non-magnetic insulating film between the main body and the second metal film,wherein the inwardly extended portion extends between the second metal film and the insulating film.5. The base according to claim 1 , whereinthe third metal film contains a nobler metal than the first metal film and the second metal film.6. The base according to claim 1 , whereinthe first metal film contains Cu.7. The base according to claim 1 , whereinthe second metal film contains Ni.8. ...

COMPOSITION FOR FORMING CONDUCTIVE FILM, AND CONDUCTIVE FILM MANUFACTURING METHOD USING SAME

A conductive film-forming composition includes copper oxide particles (A) having an average particle size of from 10 to 500 nm; copper particles (B) having an average particle size of from 100 to 1000 nm; a polyol compound (C) having two or more hydroxy groups in a molecule thereof; and at least one kind of solvent (D) selected from the group consisting of water and a water-soluble solvent. The ratio between a total weight Wof the copper oxide particles (A) and a total weight Wof the copper particles (B), W:W, is in a range from 1:3 to 3:1, and the ratio between a total weight Wof the copper oxide particles (A) and the copper particles (B) and a total weight Wof the polyol compound (C), W:W, is in a range from 20:1 to 2:1. 1. A conductive film-forming composition comprising: copper oxide particles (A) having an average particle size of from 10 to 500 nm; copper particles (B) having an average particle size of from 100 to 1000 nm; a polyol compound (C) having two or more hydroxy groups in a molecule thereof; and at least one kind of solvent (D) selected from the group consisting of water and a water-soluble solvent ,{'sub': A', 'B', 'A', 'B, 'wherein a ratio between a total weight Wof the copper oxide particles (A) and a total weight Wof the copper particles (B), W:W, is in a range from 1:3 to 3:1, and'}{'sub': AB', 'C', 'AB', 'C, 'wherein a ratio between a total weight Wof the copper oxide particles (A) and the copper particles (B) and a total weight Wof the polyol compound (C), W:W, is in a range from 20:1 to 2:1.'}2. The conductive film-forming composition according to claim 1 , wherein the average particle size of the copper particles (B) is not less than 200 nm but less than 500 nm.3. The conductive film-forming composition according to claim 1 , wherein the ratio between the total weight Wof the copper oxide particles (A) and the total weight Wof the copper particles (B) claim 1 , W:W claim 1 , is in a range from 1:2.5 to 2:1.4. The conductive film-forming ...

METHOD FOR CONNECTING TWO CONDUCTORS COMPOSED OF DIFFERENT MATERIALS AND CONNECTOR AND SYSTEM THEREFOR

A method of electrically connecting a first conductor composed of a first material, preferably aluminum, to a second conductor comprising or composed of a second material different from the first material, preferably copper, with a connector. For that purpose a connector precursor is provided, which includes a conductor core composed of the first material and sheathed by a casing layer composed of another material. The connector precursor has a first end and a second end. According to the method the casing layer is removed in the region of the first end to provide a contact surface. The first conductor is then connected to the first end in the region of the contact surface and the second conductor is connected to the second end of the connector. A connector and a system are also provided. 1. A method of electrically connecting a first conductor of a first material to a second conductor of a second material different from the first material with a connector , comprising:preparing a connector precursor including a conductor core of the first material that is sheathed by a casing layer of a material different from the first material, wherein the connector precursor has a first end and a second end;removing the casing layer in a region of the first end to expose a contact surface;connecting the first conductor to the first end in a region of the contact surface; andconnecting the second conductor to the second end.2. The method according to claim 1 , wherein connecting the first conductor to the first end includes joining the first conductor and the first end using a joining method claim 1 , including at least one of welding claim 1 , WIG welding claim 1 , soldering or brazing claim 1 , or a pressing method claim 1 , including at least one of pressing connection or pressing welding claim 1 , to produce an electrical connection.3. The method according to claim 1 , wherein to connect the first conductor to the connector claim 1 , an aperture is provided at the first end ...

TRANSMISSION LINE

A signal line conductor extends in a direction in which a signal propagates, and a dielectric, surrounding the signal line conductor, also extends in the direction in which the signal propagates. Conductive films that define and function as a ground conductor extend on a side surface of the dielectric in the direction in which the signal propagates. Furthermore, conductive films that define and function as a bridge conductor extend on a side surface of the dielectric in a direction across the direction in which the signal propagates, and thus connect the conductive films to each other. 1. (canceled)2. A transmission line comprising:a signal line conductor extending in a direction in which a signal propagates;a dielectric body extending in the direction in which the signal propagates to bury the signal line conductor therein, and including a first major surface and a second major surface opposite to the first major surface, and a side surface contiguous to the first and second major surfaces;a ground conductor disposed on the first major surface of the dielectric body such that in a plan view a conductor-free portion is provided along the signal line conductor to overlap the signal line conductor; anda bridge conductor disposed on the first major surface of the dielectric body to straddle the conductor-free portion and also electrically connect to the ground conductor; whereinthe bridge conductor is provided on a film wound on the dielectric body.3. The transmission line according to claim 2 , wherein the ground conductor is provided on a film wound on the dielectric body.4. The transmission line according to claim 2 , wherein the bridge conductor and the ground conductor are provided on a single film.5. The transmission line according to claim 2 , wherein the ground conductor is provided on a first film wound on the dielectric body claim 2 , and the bridge conductor is provided on a second film wound on the first film.6. The transmission line according to claim 2 , ...

METHOD FOR PRODUCING SUPERCONDUCTIVE CONDUCTOR AND SUPERCONDUCTIVE CONDUCTOR

A superconductive wire conductor is produced by: embedding a plurality of deposition substrates formed into to have a predetermined size in parallel with each other to a connection base material to connect and integrate therewith; depositing an intermediate layer, a superconductive layer and a protective layer on a deposition surface side of the deposition substrate; and winding a single or multiple integrated superconductive conductors around a desired core material, separating each single superconductive wire from the integrated superconductive conductor and winding each superconductive wire around the core material or winding the integrated or separated wire alternately, whereby a superconductive conductor having a good superconductive characteristic without a problem regarding a shape thereof such as local protrusions. 1. A method for producing a superconductive conductor , comprising:preparing a plurality of deposition substrates;preparing a connection base material to be connected with and to be integrated with the plurality of deposition substrates;integrating the plurality of deposition substrates with the connection base material; anddepositing a superconductive layer and a protective layer on each of the plurality of deposition substrates.2. The method for producing a superconductive conductor according to claim 1 , whereinthe plurality of deposition substrates are separated from the connection base material after depositing the protective layer.3. The method for producing a superconductive conductor according to claim 2 , comprising:embedding the plurality of deposition substrates separated from the connection base material in a stabilizing metal.4. The method for producing a superconductive conductor according to claim 1 , comprising:covering an outer circumference of the plurality of deposition substrates and the connection base material with a stabilizing metal after depositing the protective layer, the plurality of deposition substrates and the ...

FOAM INSULATED CONDUCTORS

An electrical cable comprising a conductor and a foamed insulation surrounding the conductor is disclosed. The foamed insulation has a uniform void size and an improved adhesion to the conductor. Electrical cables having a conductor thickness less than 22 mil are also disclosed. 1. An electrical cable comprising:a conductor; anda foamed insulation surrounding said conductor,wherein said conductor has a thickness of no more than about 22 mil.2. The cable of claim 1 , wherein said conductor has a thickness of no more than about 8 mil.3. (canceled)4. (canceled)5. The cable of claim 1 , wherein said foamed insulation comprises a fluoropolymer.6. The cable of claim 5 , wherein said fluoropolymer comprises a perfluoroalkoxy copolymer.7. The cable of claim 6 , wherein said perfluoroalkoxy copolymer has a melt flow rate of at least about 35 g/10 min.8. (canceled)9. The cable of claim 6 , wherein said perfluoroalkoxy copolymer has a melt flow rate ranging from about 35 g/10 min to about 50 g/10 min10. (canceled)11. (canceled)12. The cable of claim 1 , wherein said foamed insulation comprises a plurality of voids claim 1 , wherein the voids have an average size ranging from about 0.1 mil to about 1 mil.13. (canceled)14. (canceled)15. (canceled)16. The cable of claim 12 , wherein said voids have a size that varies by no more than 2 standard deviations.17. (canceled)18. The cable of claim 1 , wherein said foamed insulation has a wall thickness ranging from about 1 mil to about 15 mil.19. (canceled)20. The cable of claim 12 , wherein said foamed insulation has a void density ranging from about 25% to about 75%.21. (canceled)22. (canceled)23. The cable of claim 1 , further comprising a solid polymer layer on the outer surface of the foamed insulation.24. The cable of claim 1 , wherein the cable is a coaxial cable.25. A foamed insulation for an electrical cable claim 1 , wherein the foamed insulation comprises a foamed fluoropolymer having a plurality of voids claim 1 , wherein ...

Scratch Resistant Flexible Transparent Electrodes and Methods for Fabricating Ultrathin Metal Files as Electrodes

Systems and methods of fabricating electrodes, including thin metallic films, include depositing a first metallic layer on a substrate and passivating the deposited layer. The processes of deposition and passivation may be done sequentially. In some embodiments, a plurality of substrates may be coated with a metallic layer and further processed at a later time, including passivation and disposal of additional layers as discussed herein.

PRINTED CIRCUIT SURFACE FINISH, METHOD OF USE,AND ASSEMBLIES MADE THEREFROM

A surface finish for a printed circuit board (PCB) and semiconductor wafer includes a nickel disposed over an aluminum or copper conductive metal surface. A barrier layer including all or fractions of a nitrogen-containing molecule is deposited on the surface of the nickel layer to make a barrier layer/electroless nickel (BLEN) surface finish. The barrier layer allows solder to be reflowed over the surface finish. Optionally, gold (e.g., immersion gold) may be coated over the barrier layer to create a nickel/barrier layer/gold (NBG) surface treatment. Presence of the barrier layer causes the surface treatment to be smoother than a conventional electroless nickel/immersion gold (ENIG) surface finish. Presence of the barrier layer causes a subsequently applied solder joint to be stronger and less subject to brittle failure than conventional ENIG. 1. A method for making an electrical circuit assembly , comprising:receiving a substrate, at least a portion of the substrate including a conductive material layer;applying a mask to the surface of the substrate, the mask being selected to define individual electrical conductors;applying nickel onto the electrical conductor areas defined by the mask; andapplying a barrier layer onto the nickel, the barrier layer comprising at least a portion of a reactive nitrogen-containing molecule2. The method of claim 1 , further comprising:applying a layer of gold over the barrier layer, such that the individual electrical conductors have a nickel—barrier layer—gold (NBG) surface treatment over the conductive material.3. The method of claim 2 , wherein applying the layer of gold over the barrier layer includes immersion coating.4. The method of claim 2 , wherein applying the layer of gold over the barrier layer comprises electroplating the gold.5. The method of claim 1 , further comprising:etching areas of the exposed conductive material not carrying the applied nickel and barrier layer to form the individual electrical conductors.6. The ...

ELECTRICAL CONDUCTOR FOR AN ELECTRICAL MACHINE WITH AN ELEVATED POWER-TO-WEIGHT RATIO

The invention relates to an electrical conductor which is made up substantially of one or even several metal conductors which are sheathed by a graphene layer. Particularly in the case of the electrical conductor transporting an alternating current, the current in the conductor is forced radially outwards and therefore flows in the graphene layer. Since graphene has a substantially better conductivity than the materials customary in this application, such as copper for example, relatively low losses are accordingly produced and substantially higher degrees of efficiency can be achieved. The electrical conductor constructed in this way is used in a stator and/or rotor winding of an electrical machine, so that it has a significantly elevated power-to-weight ratio. 1. An electrical conductor for conducting an electric current in a current flow direction the electrical conductor comprising:a plurality of metal conductors that are each at least partly surrounded by a graphene layer.2. The electrical conductor of claim 1 , wherein the electrical conductor is a stranded conductor comprising a plurality of individual wires claim 1 , wherein each of the plurality of individual wires forms one of the plurality of metal conductors.3. The electrical conductor of claim 1 , wherein the electrical conductor is a stack of layers comprising a multiplicity of individual layers claim 1 , wherein the individual layers are stacked above one another in a direction perpendicular to a current flow direction claim 1 , wherein the multiplicity of individual layers comprises at least one metal layer that forms the metal conductor claim 1 , and at least two graphene layers claim 1 ,wherein the individual layers are arranged above one another such that each metal layer of the at least one metal layers lies between the at least two graphene layers.4. The electrical conductor of claim 3 , wherein the plurality of individual layers comprises a plurality of metal layers and a plurality of graphene ...

Cables exhibiting increased ampacity due to lower temperature coefficient of resistance

Cables including conductors formed form ultra-conductive copper wires which have a lower temperature coefficient of resistance are disclosed. Methods of making the cables including conductors with ultra-conductive copper wires are further disclosed.

ELECTRICAL CONTACT ALLOY FOR VACUUM CONTACTORS

An improved electrical contact alloy, useful for example, in vacuum interrupters used in vacuum contactors is provided. The contact alloy according to the disclosed concept comprises copper particles and chromium particles present in a ratio of copper to chromium particles of 2:3 to 20:1 by weight. The electrical contact alloy also comprises particles of a carbide, which reduces the weld break strength of the electrical contact alloy without reducing its interruption performance. 1. A method of making an electrical contact for use in a vacuum interrupter comprising:milling carbide particles to a desired size;providing copper and chromium particles that are larger in size than the milled carbide particles;mixing the milled carbide particles with the copper and chromium particles, present in a ratio of copper to chromium particles at 2:3 to 20:1 by weight;pressing the mixture into a compact; and,heating the compact to a temperature appropriate to a sintering process selected from the group consisting of solid state sintering, liquid phase sintering, spark plasma sintering, vacuum hot pressing, and hot isostatic pressing, such that the compact attains the properties suitable for use as a vacuum interrupter contact.2. The method recited in further comprising forming an electrical contact of a desired configuration by machine shaping the dense blank.3. The method recited in wherein the process is a sintering process and the method further comprises adding to the mixture a sinter activation element to increase the density of the compact upon sintering.4. The method recited in wherein the sinter activation element is selected from the group consisting of cobalt claim 3 , nickel claim 3 , nickel-iron claim 3 , iron aluminide claim 3 , and combinations thereof.5. The method recited in wherein the process is a sintering process claim 1 , and the temperature is between 1085° C. and 1200° C.6. The method recited in wherein the carbide particles are selected from the group ...

COPPER-CONTAINING PARTICLES, CONDUCTOR-FORMING COMPOSITION, METHOD OF PRODUCING CONDUCTIOR, CONDUCTOR, AND APPARATUS

Copper-containing particles each include: a core particle containing copper; and an organic substance on at least a part of the surface of the core particle, in which a proportion of copper-containing particles having a major-axis length of 50 nm or less is 55% by number or less with respect to the total number of the copper-containing particles. 1. Copper-containing particles , each of which comprises:a core particle comprising copper; andan organic substance on at least a part of a surface of the core particle,wherein a proportion of copper-containing particles having major-axis lengths of 50 nm or less is 55% by number or less with respect to a total number of the copper-containing particles.2. The copper-containing particles according to claim 1 , wherein a proportion of copper-containing particles having major-axis lengths of 70 nm or more is 30% by number or more with respect to the total number of the copper-containing particles.3. The copper-containing particles according to claim 1 , wherein the copper-containing particles have an average major-axis length of 55 nm or more.4. The copper-containing particles according to claim 1 , wherein the copper-containing particles have an average major-axis length of 500 nm or less.5. The copper-containing particles according to claim 1 , comprising copper-containing particles having a circularity of from 0.70 to 0.99.6. A conductor-forming composition claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the copper-containing particles according to ; and'}a dispersion medium.7. A method of producing a conductor claim 6 , the method comprising: heating the conductor-forming composition according to .8. A conductor claim 1 , comprising a structure in which the copper-containing particles according to are fused to each other.9. An apparatus claim 8 , comprising the conductor according to . The present invention relates to copper-containing particles, a conductor-forming composition, a method of ...

Cu-Ni-Co-Si BASED COPPER ALLOY SHEET MATERIAL AND METHOD FOR PRODUCING THE SAME

A Cu—Ni—Co—Si based copper alloy sheet material has second phase particles existing in a matrix, with a number density of ultrafine second phase particles is 1.0×10number/mmor more. A number density of fine second phase particles is not more than 5.0×10number/mm. A number density of coarse second phase particles is 1.0×10number/mmor more and not more than 1.0×10number/mm. The material has crystal orientation satisfying the following equation (1): 2. The copper alloy sheet material according to claim 1 , wherein a 0.2% yield strength in the rolling direction is 950 MPa or more claim 1 , a factor of bending deflection is not more than 95 GPa claim 1 , and an electrical conductivity is 30% IACS or more.3. A method for producing a copper alloy sheet material comprising:{'sup': 5', '2', '6', '2', '7', '2, 'a step of subjecting a copper alloy sheet material intermediate product having a chemical composition containing from 0.80 to 3.50% by mass of Ni, from 0.50 to 2.00% by mass of Co, from 0.30 to 2.00% by mass of Si, from 0 to 0.10% by mass of Fe, from 0 to 0.10% by mass of Cr, from 0 to 0.10% by mass of Mg, from 0 to 0.10% by mass of Mn, from 0 to 0.30% by mass of Ti, from 0 to 0.20% by mass of V, from 0 to 0.15% by mass of Zr, from 0 to 0.10% by mass of Sn, from 0 to 0.15% by mass of Zn, from 0 to 0.20% by mass of Al, from 0 to 0.02% by mass of B, from 0 to 0.10% by mass of P, from 0 to 0.10% by mass of Ag, from 0 to 0.15% by mass of Be, and from 0 to 0.10% by mass of REM (rare earth element), with the balance being Cu and inevitable impurities, having gone through a treatment of applying rolling work at a rolling ratio of 85% or more in a temperature range of not higher than 1,060° C. and 850° C. or higher, and having a metal texture in which a number density of “coarse second phase particles” having a particle diameter of 100 nm or more and not more than 3.0 μm is 1.0×10number/mmor more and not more than 1.0×10number/mm, and a number density of “fine second phase ...

METHOD OF INTERCONNECTING NANOWIRES, NANOWIRE NETWORK AND TRANSPARENT CONDUTIVE ELECTRODE

According to embodiments of the present invention, a method of interconnecting nanowires is provided. The method includes providing a plurality of nanowires, providing a plurality of nanoparticles, and fusing the plurality of nanoparticles to the plurality of nanowires to interconnect the plurality of nanowires to each other via the plurality of nanoparticles. According to further embodiments of the present invention, a nanowire network and a transparent conductive electrode are also provided. 1. A method of interconnecting nanowires comprising:providing a plurality of nanowires;providing a plurality of nanoparticles; andfusing the plurality of nanoparticles to the plurality of nanowires to interconnect the plurality of nanowires to each other via the plurality of nanoparticles.2. The method as claimed in claim 1 , wherein fusing the plurality of nanoparticles to the plurality of nanowires comprises subjecting the plurality of nanowires and the plurality of nanoparticles to a heating process claim 1 , and wherein the heating process is carried out at a predetermined temperature of 250° C. or less.34.-. (canceled)5. The method as claimed in claim 1 , further comprising mixing the plurality of nanowires and the plurality of nanoparticles prior to fusing the plurality of nanoparticles to the plurality of nanowires.611.-. (canceled)12. The method as claimed in claim 1 , wherein a weight ratio of the plurality of nanowires to the plurality of nanoparticles is between 5:1 and 20:1.13. (canceled)14. The method as claimed in claim 1 , wherein providing a plurality of nanowires comprises dispersing the plurality of nanowires in a solvent to form a solution comprising the plurality of nanowires claim 1 , and wherein providing a plurality of nanoparticles comprises adding the plurality of nanoparticles into the solution.1519.-. (canceled)20. The method as claimed in claim 1 , wherein the substrate comprises at least one of polyimide claim 1 , polycarbonate claim 1 , ...

METHODS FOR MANUFACTURING AN INSULATED BUSBAR

A method for manufacturing an insulated conductive material, the method including providing a wire, applying a masking material to one or more regions of the wire, coating regions of the wire other than the one or more regions with an insulating material by, electrically charging the wire with a first charge polarity, providing a medium of electrically charged insulating material particles that are charged with an opposite polarity, passing the charged wire through the medium, whereby the insulating material particles bind areas of the conductive material other than the one or more regions, curing the insulating material particles, and applying a solvent to the masking material to thereby remove the masking material, wherein the cured insulated material particles are substantially unaffected by the solvent. 1. A method for manufacturing an insulated conductive material , the method comprising:providing a wire;applying a masking material to one or more regions of the wire; electrically charging the wire with a first charge polarity;', 'providing a medium of electrically charged insulating material particles that are charged with an opposite polarity;', 'passing the charged wire through the medium, whereby the insulating material particles bind areas of the conductive material other than the one or more regions;', 'curing the insulating material particles; and', 'applying a solvent to the masking material to thereby remove the masking material, wherein the cured insulated material particles are substantially unaffected by the solvent., 'coating regions of the wire other than the one or more regions with an insulating material by2. The method according to claim 1 , wherein the medium of electrically charged insulating material includes insulating colloidal particles suspended in a liquid medium.3. The method according to claim 1 , wherein the wire is formed of at least one of copper claim 1 , a copper alloy claim 1 , aluminum claim 1 , nickel silver claim 1 , and ...

WIRE FOR SLIDING CONTACTS, AND SLIDING CONTACTS

A wire is provided for producing a sliding contact, wherein at least an inner core of the wire consists of a copper-silver alloy. A sliding contact is also provided having at least one such wire, wherein a counter-contact is provided whose conductive surface has at least one of the wires touch against it. The spring force of the wire acting on the conductive surface of the counter-contact effects electrical contacting between the wire and the counter-contact and the counter-contact is mobile with respect to the wire, such that the surface of the wire slides over the counter-contact when the counter-contact moves. Components having the sliding contact are also provided, including a potentiometric sensor, potentiometer, sliding dolly regulator, position sensor, rotary switch, electrical motor, generator, wind turbine, slip ring system, actuator, or current collector. 116.-. (canceled)17. A wire for producing a sliding contact , comprising at least an inner core of the wire consisting of a copper-silver alloy.18. The wire according to claim 17 , wherein the inner core extends along an entire length of the wire.19. The wire according to claim 17 , wherein the copper-silver alloy contains up to 30% by weight silver.20. The wire according to claim 17 , wherein the copper-silver alloy contains small admixtures of other elements with their fraction being less than 4% by weight.21. The wire according to claim 20 , wherein the copper-silver alloy contains Zr and/or Cr with their fraction being less than 1% by weight claim 20 , optionally less than 0.1% by weight.22. The wire according to claim 17 , wherein a thickness of the wire is from 0.1 mm to 3 mm.23. The wire according to claim 17 , wherein the wire is a reeled-up continuous wire or its length is 10 mm to 300 mm.24. The wire according to claim 17 , wherein the wire comprises a coating made of a noble metal alloy.25. The wire according to claim 24 , wherein the coating is made of a gold alloy.26. The wire according to ...

ELECTROCONDUCTIVE COMPOSITION, METHOD FOR PRODUCING THE SAME, AND ELECTROCONDUCTIVE MATERIAL

The present invention addresses the problem of providing an electroconductive composition which, even when burned in the air, can form an electroconductive film that exhibits satisfactory electroconductivity and moist-heat resistance. The problem is solved with an electroconductive composition which comprises: a surface-treated copper powder (AB) comprising a copper powder (A) and an ascorbic acid derivative (B) adherent to the surface thereof; a binder resin (C); and a dispersant (D) having an acidic group. 2. The electroconductive composition according to claim 1 , wherein RI and R2 of the ascorbic acid represented by general formula (1) or the derivative thereof (B) are hydrogen atoms.34-. (canceled)5. The electroconductive composition according to claim 1 , wherein an amount of the ascorbic acid or the derivative thereof (B) is 1 to 30 parts by mass relative to 100 parts by mass of the copper powder (A).6. The electroconductive composition according to claim 1 , wherein an amount of the dispersant (D) is 0.1 to 10 parts by mass relative to 100 parts by mass of the surface-treated copper powder (AB).7. The electroconductive composition according claim 1 , further comprising a copper precursor (Y).9. An electroconductive material claim 1 , comprising: a substrate claim 1 , and an electroconductive film which is a dried material or a cured material of the electroconductive composition according to .10. The method for producing an electroconductive composition according to claim 8 , wherein the dispersant (D) is a phosphoric acid group-containing dispersant.11. The method for producing an electroconductive composition according to claim 8 , wherein the dispersant (D) further contains an amino group. The present invention relates to an electroconductive composition, and a method for producing the same. Further, the present invention relates to an electroconductive material including a substrate and an electroconductive film which is a dried material or a cured ...

COPPER ALLOY WIRE, COPPER ALLOY STRANDED WIRE, ELECTRIC WIRE, TERMINAL-FITTED ELECTRIC WIRE, AND METHOD OF MANUFACTURING COPPER ALLOY WIRE

Provided are: a copper alloy wire having an excellent electrical conductivity, a high strength, and an excellent elongation; a copper alloy stranded wire including the copper alloy wire; an electric wire including the copper alloy wire or the copper alloy stranded wire as a conductor; a terminal-fitted electric wire including the aforementioned electric wire; and a method of manufacturing a copper alloy wire. The copper alloy wire has a composition including: not less than 0.2% by mass and not more than 1% by mass of Mg; not less than 0.02% by mass and not more than 0.1% by mass of P; and the balance including Cu and inevitable impurities. The copper alloy wire has an electrical conductivity of not less than 60% IACS, a tensile strength of not less than 400 MPa, and an elongation at breakage of not less than 5%. 1. A copper alloy wire consisting of: not less than 0.84% by mass and not more than 1% by mass of Mg; not less than 0.02% by mass and not more than 0.1% by mass of P; and the balance being Cu and inevitable impurities ,the copper alloy wire havingan electrical conductivity of not less than 60% IACS,a tensile strength of not less than 400 MPa, andan elongation at breakage of not less than 5%.2. The copper alloy wire according to claim 1 , whereinthe copper alloy wire has a structure in which a precipitate disperses,the precipitate includes a compound containing the Mg and the P, andthe precipitate has an average particle size of not more than 500 nm.3. The copper alloy wire according to claim 1 , wherein a mass ratio Mg/P of the Mg to the P is not less than 4 and not more than 30.4. The copper alloy wire according to claim 1 , wherein the copper alloy wire has a wire diameter of not more than 0.35 mm.5. The copper alloy wire according to claim 1 , wherein an average particle size of a matrix including the Cu is not more than 10 μm.6. A copper alloy stranded wire comprising the copper alloy wire as recited in .7. A copper alloy stranded wire which is a ...

Thermally-Drawn Fiber Including Devices

There is provided herein a fiber including a fiber body with a fiber body material having a longitudinal axis along a fiber body length. A plurality of devices is disposed as a linear sequence of devices within the fiber body. Each device includes at least one electrical contact pad. At least one electrical conductor is disposed within the fiber body. The electrical conductor is electrically connected to an electrical contact pad of devices in the plurality of devices. A weavable device includes at least one device material arranged in a planar device configuration and connected to an electrical contact pad. An electrically insulating, mechanically flexible fiber body material encapsulates the planar device configuration and contact pad and has a fiber body length greater than 10 m. An electrical conductor is electrically connected to a device contact pad and extends the fiber body length. 1. A fiber comprising:a fiber body comprising a fiber body material and having a longitudinal axis along a fiber body length;a plurality of devices disposed as a linear sequence of devices within the fiber body along at least a portion of the fiber body length, each device including at least one electrical contact pad; andat least one electrical conductor disposed within the fiber body along at least a portion of the fiber body length, the electrical conductor being electrically connected to an electrical contact pad of devices in the plurality of devices within the fiber body.2. The fiber of wherein the fiber body material comprises a polymeric claim 1 , electrically insulating material.3. The fiber of wherein the fiber body material includes at least one material selected from the group consisting of a thermoplastic material claim 1 , a polyimide material claim 1 , a thermoset material claim 1 , a glass material claim 1 , a polysulfone material claim 1 , a polycarbonate material claim 1 , a polymethyl methacrylate material claim 1 , a polyethylene material claim 1 , a polyether ...

ELECTRICAL CONDUCTOR FOR AERONAUTICAL APPLICATIONS

An electrical conductor has at least one conducting strand made up at least of a layer of copper and of a layer of silvered copper alloy, in which the silver content by mass is between 0.1% and 0.5%. 1. Electrical conductor comprising:at least one conducting strand made up of at least of a layer of copper and of a layer of silvered copper alloy, in which the silver content by mass is between 0.1% and 0.5%.2. Electrical conductor according to claim 1 , wherein said electrical conductor has at least one strand made from a material to be selected from copper claim 1 , aluminum claim 1 , a copper alloy and an aluminum alloy.3. Electrical conductor according to claim 1 , wherein said electrical conductor has a peripheral layer of several conducting strands made up at least of a layer of copper and of a layer of silvered copper alloy claim 1 , in which the silver content by mass is between 0.1% and 0.5%.4. Electrical conductor according to claim 3 , wherein said electrical conductor has a central strand made of high-tenacity alloy claim 3 , six intermediate strands surrounding said central strand and made of aluminum alloy claim 3 , and twelve peripheral claim 3 , strands made up at least of a layer of copper and of a layer of silvered copper alloy of which the silver content by mass is between 0.1% and 0.5%.5. Electrical conductor according to claim 1 , wherein the conducting strands are covered with a layer protecting them against corrosion.6. Electrical conductor according to claim 5 , wherein the protective layer is a layer of nickel.7. Electrical conductor according to claim 1 , wherein a cross section of each conducting strand is between 0.15 mmand 2 mm.8. Electrical conductor according to claim wherein the conducting strands are arranged together in such a way that the circular section of the said conductor is circular.9. Electric cable comprising at least one electrical conductor according to . This application claims the benefit of priority from French Patent ...

COPPER ALLOY ELEMENT WIRE, COPPER ALLOY STRANDED WIRE, AND AUTOMOTIVE ELECTRIC WIRE

A copper alloy element wire has a chemical composition including: 0.45 mass % or more and 2.0 mass % or less, in total, of at least one additive element selected from the group consisting of Fe, Ti, Sn, Ag, Mg, Zn, Cr and P; in mass ppm, 10 ppm or less of H content, and the balance being Cu and unavoidable impurities. A copper alloy stranded wire includes a plurality of the copper alloy element wires twisted together. An automotive electric wire includes the copper alloy stranded wire and an insulator that covers the outer periphery of the copper alloy stranded wire 1. A copper alloy element wire for use as a conductor of an automotive electric wire , the copper alloy element wire having a chemical composition comprising:0.45 mass % or more and 2.0 mass % or less, in total, of at least one additive element selected from the group consisting of Fe, Ti, Sn, Ag, Mg, Zn, Cr and P;in mass ppm, 10 ppm or less of H content; andthe balance being Cu and unavoidable impurities.2. The copper alloy element wire according to claim 1 , wherein an O content in the chemical composition is 20 ppm or less in mass ppm.3. The copper alloy element wire according to claim 1 , wherein a tensile strength of the copper alloy element wire is 400 MPa or more.4. The copper alloy element wire according to claim 1 , wherein an element wire elongation of the copper alloy element wire is 5% or more.5. The copper alloy element wire according to claim 1 , wherein an electrical conductivity of the copper alloy element wire is 62% IACS or more.6. The copper alloy element wire according to claim 1 , wherein an element wire diameter of the copper alloy element wire is 0.3 mm or less.7. A copper alloy stranded wire comprising a plurality of the copper alloy element wires according to claim 1 , the plurality of the copper alloy element wires being twisted together.8. The copper alloy stranded wire according to claim 7 , wherein the copper alloy stranded wire is compressed in a radial direction of the ...

COPPER ALLOY FOR ELECTRONIC/ELECTRICAL DEVICE, COPPER ALLOY PLASTICALLY-WORKED MATERIAL FOR ELECTRONIC/ELECTRICAL DEVICE, COMPONENT FOR ELECTRONIC/ELECTRICAL DEVICE, TERMINAL, AND BUSBAR

A copper alloy for and electric and an electronic device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; Pin a range of 0.0005 mass % or more and less than 0.01 mass %; and a Cu balance including inevitable impurities. In the copper alloy, a Mg content [Mg] and a P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]+20×[P]<0.5, and an electrical conductivity of the copper alloy is more than 75% IACS. 1. A copper alloy for an electronic and electric device comprising:Mg in a range of 0.15 mass % or more and less than 0.35 mass %;P in a range of 0.0005 mass % or more and less than 0.01 mass %; anda Cu balance including inevitable impurities, whereina Mg content [Mg] and a P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]+20×[P]<0.5, andan electrical conductivity of the copper alloy is more than 75% IACS.2. The copper alloy for an electronic and electric device according to claim 1 , whereinthe Mg content [Mg] and the P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]/[P]≦400.3. The copper alloy for an electronic and electric device according to claim 1 , whereina 0.2% yield strength is 300 MPa or more when a tensile test is carried out in a direction orthogonal to a rolling direction.4. The copper alloy for an electronic and electric device according to claim 1 , wherein a residual stress ratio is 50% or more at 150° C. for 1000 hours.5. A plastically-worked copper alloy material for an electronic and electric device made of the copper alloy for an electronic and electric device according to .6. The plastically-worked copper alloy material for an electronic and electric device according to claim 5 , wherein a Sn plating layer or a Ag plating layer is provided on a surface of the plastically-worked copper alloy material.7. A component for an electronic and electric device made of the plastically- ...

CONDUCTING WIRE END PORTION JOINING METHOD, AND CONDUCTING WIRE END PORTION JOINING STRUCTURE

A conducting wire end portion joining method is a method for conductively joining together end portions of conducting wires each covered with an insulation coating. The conducting wire end portion joining method includes: adjoining end portions of two winding wires, and bringing the end portions of the conducting wires of the two winding wires into contact with a conductive coating material stored in an insulating cap having a property of shrinking when heated; and shrinking the insulating cap by heating to fix the shrunken insulating cap around the insulation coatings of the end portions of the two winding wires, and joining together the end portions of the two winding wires by conductively connecting the conducting wires of the two winding wires via the hardened conductive coating material. 1. A conducting wire end portion joining method for conductively joining together end portions of conducting wires each covered with an insulation coating , adjoining end portions of two winding wires, and bringing the end portions of the conducting wires of the two winding wires into contact with a conductive coating material stored in an insulating cap having a property of shrinking when heated; and', 'shrinking the insulating cap by heating to fix the shrunken insulating cap around the insulation coatings of the end portions of the two winding wires, and joining together the end portions of the two winding wires by conductively connecting the conducting wires of the two winding wires via the hardened conductive coating material., 'the conducting wire end portion joining method comprising2. The conducting wire end portion joining method according to claim 1 , wherein the conductive coating material contains a thermosetting resin.3. The conducting wire end portion joining method according to claim 1 , wherein:the conducting wires are made of copper; andthe conductive coating material is a material in which copper or silver is dispersed in a thermosetting resin.4. The ...

LOW RESISTIVITY TAP CLAMP

Clamps and methods disclosed herein can help to provide efficient electrical communication between a first conductor and a second conductor. An example clamp includes a main housing portion that includes a first surface, a second surface, a body, and an insert, the insert providing electrical communication between the first surface and the second surface; a clamp member; and a fastener. 1. A clamp for providing electrical communication between a first conductor and a second conductor , the clamp comprising:a main housing portion including a first surface, a second surface, a body, and an insert, the insert providing electrical communication between the first surface and the second surface;a clamp member including a first clamp surface adjacent the second surface of the main housing portion in a facing relationship; anda fastener movably coupled to the main housing portion, the fastener adjacent to the first surface of the main housing portion.2. The clamp of claim 1 , wherein the body has a resistivity that is different than the resistivity of the insert.3. The clamp of claim 1 , wherein the body has a resistivity that is greater than the resistivity of the insert.4. The clamp of claim 1 , wherein the insert has a resistivity of less than 5×10ohm-cm.5. The clamp of claim 1 , wherein the insert comprises copper claim 1 , aluminum claim 1 , or a combination thereof.6. The clamp of claim 1 , wherein the insert comprises copper claim 1 , aluminum claim 1 , or a combination thereof at greater than 97% by weight of the insert.7. The clamp of claim 1 , wherein the body comprises aluminum at less than 97% by weight of the body.8. The clamp of claim 1 , wherein the body is at least partially tin plated.9. The clamp of claim 1 , wherein the fastener is configured to receive the first conductor and bring the first conductor into contact with the first surface of the main housing portion.10. The clamp of claim 1 , wherein the second surface of the main housing portion and the ...

RADIATION AND HEAT RESISTANT CABLES

A cable intended for use in a nuclear environment includes one or more conductors, a longitudinally applied corrugated shield surrounding the one or more conductors, and a cross-linked polyolefin jacket layer surrounding the longitudinally applied corrugated shield. The cable conducts about 5,000 volts to about 68,000 volts in use and is radiation resistant and heat resistant. The cable comprises a life span of about 40 years or more when measured in accordance with IEEE 323. Methods for making a cable and a nuclear reactor utilizing such a cable are also provided. 1. A cable for nuclear environments comprising:one or more conductors;a longitudinally applied corrugated shield surrounding the one or more conductors; anda cross-linked polyolefin jacket layer surrounding the longitudinally applied corrugated shield; andwherein the cable conducts about 5,000 volts to about 68,000 volts in use, is radiation resistant and heat resistant, and comprises a life span of about 40 years or more when measured in accordance with IEEE 323.2. The cable of conducts about 15 claim 1 ,000 volts in use.3. The cable of claim 1 , wherein the conductor substantially continuously operates at a temperature of about 90° C. or more over the about 40 years or more.4. The cable of passes the requirements of IEEE 383 after a Design Basis Event simulating a loss of coolant accident.5. The cable of claim 4 , wherein the Design Basis Event comprises submersion in a boric acid solution for about 1 year claim 4 , wherein the boric acid is maintained at about 50® C. to about 205° C.6. The cable of is exposed to about 100 MRad or more of radiation to simulate a reactor life of about 40 years or more prior to the Design Basis Event.7. The cable of claim 6 , wherein the about 100 MRad or more of radiation comprises one or more of gamma radiation and beta radiation.8. The cable of claim 1 , wherein the cross-linked polyolefin jacket comprises one or more ethylene-containing polymers comprising ...

SURFACE-TREATED METAL POWDER AND CONDUCTIVE COMPOSITION

There is provided a more versatile technique that is useful for enhancing the sintering delay property of a metal powder. A metal powder surface-treated with at least one coupling agent comprising Si, Ti, Al or Zr, wherein a total adhesion amount of Si, Ti, Al and Zr is 200 to 10,000 μg with respect to 1 g of the surface-treated metal powder, wherein a 1% by mass aqueous solution of the coupling agent indicates a pH of 7 or less, and wherein a sintering starting temperature is 500° C. or higher.

Power inductor

A power inductor includes a core and winding. The winding has at least two portions, one made of pure copper and the other made of a low-TCR (temperature coefficient of resistance) alloy, wherein the alloy portion is used to form a current sensor. The two portions are joined to provide a unitary winding. The inductor can provide accurate current detection sensor while minimizing total resistance of the winding.

MANUFACTURING METHOD OF COPPER ALLOY SHEET

Manufacturing method of a copper alloy sheet including melting and casting a raw material of a copper alloy having a composition containing 1.0 mass % to 3.5 mass % Ni, 0.5 mass % to 2.0 mass % Co, and 0.3 mass % to 1.5 mass % Si with a balance being composed of Cu and an unavoidable impurity. The method includes the steps of first cold rolling, intermediate annealing, second cold rolling, a solution heat treatment and aging. The solution heat treatment includes: heating at 800° C. to 1020° C.; first quenching to 500° C. to 800° C.; maintaining the 500° C. to 800° C. temperature for 10 seconds to 600 seconds; and second quenching to 300° C. or lower. 14.-. (canceled)5. A manufacturing method of a copper alloy sheet comprising:a melting/casting step of melting and casting a raw material of a copper alloy having a composition containing 1.0 mass % to 3.5 mass % Ni, 0.5 mass % to 2.0 mass % Co, and 0.3 mass % to 1.5 mass % Si with a balance being composed of Cu and an unavoidable impurity;a hot rolling step of performing hot rolling after said melting/casting step;a first cold rolling step of performing cold rolling after said hot rolling step;an intermediate annealing step of performing heat treatment at a heating temperature of 500° C. to 650° C. after said first cold rolling step;a second cold rolling step of performing cold rolling with a rolling ratio of 70% or more after said intermediate annealing step;a solution heat treatment step of performing solution heat treatment after said second cold rolling step; andan aging step of performing aging at 400° C. to 500° C. after said solution heat treatment step, whereinsaid solution heat treatment step includes: a heating step at 800° C. to 1020° C.; a first quenching step of performing quenching to 500° C. to 800° C. after said heating step; a temperature maintaining step of maintaining the 500° C. to 800° C. temperature for 10 seconds to 600 seconds; and a second quenching step of performing quenching to 300° C. or ...

METHOD FOR PRODUCING FINE PARTICLE DISPERSION

In a fine particle dispersion, a fine particle (P) is dispersed in a mixed organic solvent. The fine particle (P) is formed of one type or not less than two types of a metal, an alloy, and/or a metallic compound, and has a mean particle diameter between 1 nm and 150 nm for primary particles thereof. Further, the fine particle (P) has a surface at least a part thereof coated with a polymer dispersing agent (D). 1. A method for producing a fine particle dispersion , in which a fine particle (P) comprised of one type or not less than two types of a metal , an alloy , and/or a metallic compound , having a mean particle diameter of between 1 nm and 150 nm for primary particles thereof , and having a surface with at least a part thereof coated with a polymer dispersing agent (D) , is dispersed in a mixed organic solvent ,wherein a weight ratio of (D/P) between the polymer dispersing agent (D) coating the surface of the fine particle (P) and the fine particles (P) in the dispersion is between 0.001 and 10, andthe fine particle (P), at least the part of the surface of which is coated by the polymer dispersing agent (D), is dispersed into one of:(i) a mixed organic solvent (S1) which contains at least an organic solvent (A) having an amide group as between 50% and 95% by volume, and a low boiling point organic solvent (B) having a boiling point of between 20° C. and 100° C. at a normal pressure as between 5% and 50% by volume;(ii) a mixed organic solvent (S2) which contains at least the organic solvent (A) having the amide group as between 50% and 95% by volume, and an organic solvent (C) having a boiling point of higher than 100° C. at a normal pressure and comprised of an alcohol and/or a polyhydric alcohol having one or not less than two hydroxyl groups in a molecule thereof as between 5% and 50% by volume; or(iii) a mixed organic solvent (S3) which contains at least the organic solvent (A) having the amide group as between 50% and 94% by volume, the low boiling point ...

Composite nanometal paste containing copper filler and joining method

The present invention addresses the problem of providing a composite nanometal paste which is relatively low in price and is excellent in terms of bonding characteristics, thermal conductivity, and electrical property. The present invention is a copper-filler-containing composite nanometal paste that contains composite nanometal particles each comprising a metal core and an organic coating layer formed thereon. The metal paste contains a copper filler and contains, as binders, first composite nanometal particles and second composite nanometal particles which differ from the first composite nanometal particles in the thermal decomposition temperature of the organic coating layer, wherein the mass proportion W1 of the organic coating layer in the first composite nanometal particles is in the range of 2-13 mass %, the mass proportion W2 of the organic coating layer in the second composite nanometal particles is in the range of 5-25 mass %, and these particles satisfy the relationships W1.

Copper alloy for electronic and electrical equipment, copper alloy plate strip for electronic and electrical equipment, component for electronic and electrical equipment, terminal, busbar, and movable piece for relay

Provided is a copper alloy for electronic and electrical equipment including: 0.15 mass % or greater and less than 0.35 mass % of Mg; 0.0005 mass % or greater and less than 0.01 mass % of P; and a remainder which is formed of Cu and unavoidable impurities, in which a conductivity is greater than 75% IACS, and an average number of compounds containing Mg and P with a particle diameter of 0.1 μm or greater is 0.5 pieces/μm2 or less in observation using a scanning electron microscope.

WIRE MATERIAL FOR CONNECTOR TERMINAL

A wire material for a connector terminal contains 0.1% to 1.5% by mass of Fe, 0.05% to 0.7% by mass of Ti, and 0% to 0.5% by mass of Mg, with the balance being Cu and impurities. 1. A wire material for a connector terminal comprising:0.1% to 1.5% by mass of Fe;0.05% to 0.7% by mass of Ti; and0% to 0.5% by mass of Mg,with the balance being Cu and impurities.2. The wire material for a connector terminal according to claim 1 , wherein the wire material for a connector terminal has a conductivity of 40% IACS or more and a tensile strength of 600 MPa or more.3. The wire material for a connector terminal according to claim 1 , wherein the ratio Fe/Ti claim 1 , by mass claim 1 , is 1.0 to 5.5.4. The wire material for a connector terminal according to claim 1 , further comprising 10 to 500 ppm by mass in total of at least one element selected from the group consisting of C claim 1 , Si claim 1 , and Mn.5. The wire material for a connector terminal according to claim 1 , wherein the wire material for a connector terminal has a stress relaxation rate of 30% or less after it has been held at 150° C. for 1 claim 1 ,000 hours.6. The wire material for a connector terminal according to claim 1 , wherein the wire material for a connector terminal has a lateral cross-sectional area of 0.1 to 2.0 mm.7. The wire material for a connector terminal according to claim 1 , wherein the wire material for a connector terminal is a rectangular wire whose lateral cross-sectional shape is quadrilateral.8. The wire material for a connector terminal according to claim 1 , wherein the wire material for a connector terminal has a plating layer containing at least one of Sn and Ag on at least a part of a surface thereof. The present invention relates to a wire material for a connector terminal.The present application is based upon and claims the benefit of priority from Japanese Patent Application No. 2016-031324, filed Feb. 22, 2016, and Japanese Patent Application No. 2016-240702, filed Dec. 12, ...

HYBRID CONDUCTOR

A cable comprising that includes an elongated conductor operable to transmit electrical energy at medium or high AC voltages. The conductor has a core including a first plurality of wires of a first conductive material, and an outer layer surrounding the core including a second plurality of wires of a second conductive material. The first conductive material has a deeper characteristic skin depth than the second conductive material. The total cross sectional area of the first and second plurality of wires is at least about 2500 kcmil. 1. A cable comprising:an elongated conductor operable to transmit electrical energy at medium or high AC voltages and having a core including a first plurality of wires of a first conductive material, and an outer layer surrounding the core including a second plurality of wires of a second conductive material, the first conductive material having a deeper characteristic skin depth than the second conductive material; and,wherein the total cross sectional area of the first and second plurality of wires is at least about 2500 kcmil.2. The cable of claim 1 , wherein the elongated conductor has a wedge cross-sectional shape.3. The cable of claim 2 , further comprising:a plurality of elongated conductors having a wedge cross-sectional shape, each of the elongated conductors having a narrow end, a wide end, and a first and second side extending from the narrow end to wide end, the plurality of elongated conductors disposed about a center of the cable, wherein the first and second side of each of the plurality of elongated conductors is adjacent another of the plurality of elongated conductors.4. The cable of claim 3 , wherein a nonconductive or semiconductive coating surrounds each of the plurality of elongated conductors and separates each of the plurality of elongated conductors from the adjacent elongated conductors.5. The cable of claim 1 , wherein the first conductive material includes aluminum.6. The cable of claim 5 , wherein the ...

Hybrid conductor with circumferential conducting layers

A conducting medium or high voltage cable can include at least one conductor surrounded by an insulating layer. One or more layers of conducting wires can surround the insulating layers, and the layers of conducting wires themselves can be separated by insulating layers. The centrally disposed conductor and surrounding circumferential conducting layers can include copper, aluminum, or a combination of both. The central conductor can range between about 1000 kcmil to about 4000 kcmil cross-sectional area, and the surrounding layers of conducting wires can be at least about 250 kcmil.

MULTI-LAYER ELECTRICAL CONTACT ELEMENT

Multi-layer electrical contact elements include a flash palladium layer and an intermediate layer of binary hard silver/tin alloy having good corrosion resistance where inter-diffusion of metals between adjacent layers is inhibited to provide distinct interfaces between adjacent layers. 14-. (canceled)5. The multi-layer electrical contact element of claim 14 , wherein the gold layer is 10 nm to 2 μm thick.6. The multi-layer electrical contact element of claim 14 , wherein the binary silver/tin alloy layer is 0.1 μm to 7 μm thick.7. The multi-layer electrical contact element of claim 14 , wherein the palladium metal flash layer is 10 nm to 0.5 μm thick.8. The multi-layer electrical contact element of claim 14 , wherein the binary silver/tin alloy is composed of 80% by weight to 95% by weight silver and 5% by weight to 20% by weight tin.9. The multi-layer electrical contact element of claim 14 , wherein the binary silver/tin alloy is composed of 70% to 95% by weight silver and 5% by weight to 30% by weight tin.1013-. (canceled)14. A multi-layer electrical contact element composed of a substrate with a layer of copper or copper alloy claim 14 , a binary silver/tin alloy layer with a silver content of greater than 50% by weight adjacent and joined to the copper or copper alloy layer claim 14 , and a palladium metal flash layer adjacent and joined to the silver/tin alloy layer claim 14 , and a gold layer adjacent and joined to the palladium metal flash layer.15. The multi-layer electrical contact element of claim 14 , wherein the substrate is a dielectric material.16. The multi-layer electrical contact element of claim 15 , wherein the dielectric material is chosen from non-conductive and semiconductive materials.17. The multi-layer electrical contact of claim 16 , wherein the non-conductive materials are chosen from thermoplastic resins and thermosetting resins. The present invention is directed to a multi-layer electrical contact element having good corrosion ...

BUS BAR AND MANUFACTURING METHOD THEREOF

A bus bar and a method of manufacturing the same may include a first metal portion made of a first metal material; and a second metal portion made of a second metal material different than the first metal portion. The first metal portion and the second metal portion are coupled by a rotation friction welding (RFW). 1. A bus bar comprising:a first metal portion made of a first metal material; anda second metal portion made of a second metal material different than the first metal portion,wherein the first metal portion and the second metal portion are coupled by a rotation friction welding (RFW).2. The bus bar of claim 1 , wherein:the first metal material is aluminum.3. The bus bar of claim 1 , wherein:the second metal material is copper.4. The bus bar of claim 1 , wherein:silver is plated on a surface of the second metal portion.5. The bus bar of claim 4 , wherein:a stepped portion is formed in the second metal portion,the stepped portion is formed by a first body and a second body,a diameter of the first body is the same as the diameter of the first metal portion, anda diameter of the second body is smaller than the diameter of the first body.6. The bus bar of claim 5 , wherein:silver is plated on only the second metal portion, except for the stepped portion.7. The bus bar of claim 5 , wherein:a plurality of grooves is formed on the stepped portion along a circumferential direction.8. The bus bar of claim 7 , wherein:the plurality of grooves is formed as a plane parallel to a central axis of the first metal portion.9. The bus bar of claim 1 , wherein:a bolt fastening hole is formed on a bottom of the first metal portion.10. A method of manufacturing a bus bar claim 1 , the method comprising:processing a first metal portion of a first metal material;processing a second metal portion of a different material than the first metal material;plating the second metal portion with silver; andwelding the first metal portion and the second metal portion by a rotation friction ...

ELECTRICAL CONTACT APPEARANCE AND PROTECTION

Methods of coating contacts to have a specific color. The color can be selected to match a color of a portion of a device enclosure for an electronic device housing the contacts. Examples can instead provide methods of coating contacts to have a color to contrast with a color of a portion of the device enclosure. These methods can provide electrical contacts having a low contact resistance and good corrosion and scratch resistance. 1. A method of manufacturing an electrical contact comprising:receiving a contact substrate;forming a plurality of holes in a surface of the contact substrate, wherein the holes are separated by a pattern of raised portions;plating the surface of the contact substrate;applying a coating layer to the surface of the contact substrate; andcuring the coating layer such that at least some of the pattern of raised portions are exposed.2. The method of wherein the contact substrate comprises copper.3. The method of wherein the holes are formed by sandblasting.4. The method of wherein the holes are formed using a laser.5. The method of wherein plating the surface of the contact substrate comprises plating the surface with copper claim 4 , plating the copper plating with palladium claim 4 , applying a gold flash to the palladium claim 4 , and plating the gold flash with rhodium-ruthenium.6. The method of further comprising claim 5 , before curing the coating layer claim 5 , applying a layer of solvent.7. The method of wherein the coating layer comprises a silicon-based polymer.8. A method of manufacturing an electrical contact comprising:receiving a contact substrate;laser drilling a plurality of holes in a surface of the contact substrate, wherein the holes are separated by a pattern of raised portions;applying a dyed gelatinous solution to the surface of the contact substrate; andcuring the dyed gelatinous solution such that its thickness is reduced and at least some of the pattern of raised portions are exposed.9. The method of wherein the ...

ROTOR CONSTRUCTION FOR HIGH SPEED MOTORS

A rotor shaft for a high speed motor that has a coating that is secured to a shaft body. The coating and the shaft body are formed from dissimilar materials. More specifically, the coating may be an alloy material, such as, for example, a copper alloy, while the shaft body may be a steel material. According to certain embodiments, the alloy material of the coating may be secured to at least a portion of a rotor body blank in a solution treated condition via a low temperature welding procedure. Additionally, the coating may be hardened, such as for example, through the use of an age hardening process. The coating and the rotor body blank may be machined together to form the rotor shaft. According to certain embodiments, such machining may configure the rotor shaft for use with a turbo-compressor that is configured for air compression. 121-. (canceled)22. A method for manufacturing a rotor shaft for a high speed motor , the method comprising:forming a rotor body blank from a steel material;solution heat treating an alloy material, wherein a duration of heat treating the alloy material is dependent on a thickness of the alloy material, the alloy material and the steel material of the rotor body blank being different materials;securing the solution treated alloy material to at least a portion of the rotor body blank to provide a coating;heat treating the coating when the coating is secured to the rotor body blank, the heat treating process adapted to minimize the loss of a core property of the steel material of the rotor body blank; andmachining the rotor body blank and the coating to form the rotor shaft, the rotor shaft configured for operation in the high speed motor.23. The method of claim 22 , wherein the duration of heat treating the alloy material ranges from three minutes to three hours.24. The method of claim 22 , wherein the alloy material is a copper alloy.25. The method of claim 24 , wherein the step of securing the alloy material includes using a low ...

MONITORING UNIT FOR MONITORING AN ELECTRICAL CIRCUIT BREAKER AND CIRCUIT BREAKER COMPRISING SUCH A MONITORING UNIT

This monitoring unit () for monitoring an electrical circuit breaker (D) includes: 1: A monitoring unit for monitoring a multipolar electrical circuit breaker , comprising: [ input contact pads able to be connected electrically to power input terminals of a multipolar electrical circuit breaker, for receiving primary electrical voltages from the circuit breaker,', 'an electrical power circuit including a voltage divider bridge, configured to convert the primary electrical voltages to secondary electrical voltages;, 'an interconnection device comprising, 'a control device, provided with a measuring circuit able to measure the secondary electrical voltages supplied by the electrical power circuit, the control device being programmed to determine an operating state of the circuit breaker depending on the secondary electrical voltages measured by the measuring circuit;, 'a central body including being connected electrically to the interconnection device in order to collect the primary electrical voltages, and', 'comprising a power converter, configured to transform the collected primary electrical voltages into an additional secondary voltage and to supply electric power to a shared electric power supply bus of the control device using this additional secondary voltage., 'a removable electric power supply module, received in a recess of the central body, this module2: The monitoring unit according to claim 1 , wherein the interconnection device includes a support on which the electrical power circuit is arranged claim 1 , the input contact pads being positioned on an edge of the support claim 1 , and in that the interconnection device includes longitudinal insulation screens arranged along the support claim 1 , starting from said edge of the support and extending perpendicularly with respect to the plane of the support claim 1 , so as to separate the input contact pads transversely from one another.3: The monitoring unit according to claim 2 , wherein the longitudinal ...

Copper alloy with excellent comprehensive performance and application thereof

The invention is a copper alloy with excellent comprehensive performance, including the following components in percentage by weight: 0.4 wt %-2.0 wt % of Ni, 0.2 wt %-2.5 wt % of Sn, 0.02 wt %-0.25 wt % of P, 0.001 wt %-0.5 wt % of Si, and the balance of Cu and unavoidable impurities. The copper alloy has a yield strength of 550 MPa or above, and an electrical conductivity of 38% IACS or above. A bending workability is as follows: the value of R/t in the GW direction is less than or equal to 1, and the value of R/t in the BW direction is less than or equal to 2; and after the copper alloy is kept at 150° C. for 1000 hours, a residual stress rate is greater than or equal to 75%, and the stress relaxation resistance is excellent.

CONDUCTOR FOR ELECTRIC WIRE

A conductor for an electric wire having high-strength and high electric conductivity is provided. The conductor includes copper alloy in which a plurality of two-phases is dispersed in mother phase consisting of copper, the two-phases being made of metal crystal. The metal crystal is formed in a needle shape, and oriented in a longitudinal direction of the conductor for the electric wire. The conductor is able to reduce the diameter and weight, and to be used in ultrafine electric wire. 1. A conductor for an electric wire comprising:copper alloy in which a plurality of two-phases is dispersed in mother phase consisting of copper, the two-phases being made of metal crystal,wherein the metal crystal is formed in a needle shape, and oriented in a longitudinal direction of the conductor for the electric wire, andwherein the electric wire is formed by wire drawing, and the distance between the needle-shaped two-phases made of metal crystal in the mother phase is equal to or lower than 0.25 micrometer.2. The conductor for the electric wire as claimed in claim 1 , wherein the two-phases which are dispersed in the mother phase when the copper alloy is cast or when the copper alloy is heated so as to process wire are formed in the needle shape by wire drawing of the copper alloy.3. The conductor for the electric wire as claimed in claim 1 , wherein the conductor for the electric wire is obtained in a manner that copper to which an element forming eutectic crystal having a melting point higher than a melting point of copper together with copper and/or an element having a melting point higher than the melting point of the copper is added is cast claim 1 , and then is processed by wire drawing.4. The conductor for the electric wire as claimed in claim 2 , wherein the electric wire is formed by wire drawing claim 2 , and the distance between the needle-shaped two-phases made of metal crystal in the mother phase is equal to or lower than 0.25 micrometer.5. The conductor for the ...

WIRE FOR DEEP WATER TRANSMISSION

An electrically conductive wire for deep water transmission includes a first wire portion and a second wire portion. The first wire portion makes up one end of the wire, and is formed from a first metal. The second wire portion is formed from a second metal. The first metal has a higher ultimate tensile strength than the second metal. The first wire portion is used to support the weight of the second wire portion, thereby allowing the electrically conductive wire to be used in underwater or subsea power cables which may be freely suspended from their origin for providing electricity to electrical devices located in deep water or ultra-deep water. 1. An electrically conductive wire for deep water transmission having a first wire portion and a second wire portion welded together;wherein the first wire portion is formed of a first metal, is located at one end of the wire, and has a length of about 100 feet or greater;wherein the second wire portion is formed of a second metal; andwherein the first metal has a higher ultimate tensile strength than the second metal.2. The electrically conductive wire of claim 1 , wherein the first metal has an ultimate tensile strength of 100 ksi or higher.3. The electrically conductive wire of claim 1 , wherein the first metal is a copper-nickel-beryllium alloy.4. The electrically conductive wire of claim 3 , wherein the first metal contains from about 0.2 wt % to about 0.6 wt % of beryllium claim 3 , about 1.4 wt % to about 2.2 wt % of nickel claim 3 , and balance copper.5. The electrically conductive wire of claim 1 , wherein the second metal has an ultimate tensile strength of 75 ksi or less.6. The electrically conductive wire of claim 1 , wherein the second metal is at least 99.9 wt % copper.7. The electrically conductive wire of claim 1 , wherein the second metal has a higher electrical conductivity than the first metal.8. The electrically conductive wire of claim 1 , wherein the second metal has an electrical conductivity of 100% ...

TRIPLE HELIX DRIVELINE CABLE AND METHODS OF ASSEMBLY AND USE

A power cable having improved durability and associated methods of assembly and use are described herein. In one aspect, the power cable is adapted for use in powering an implantable circulatory pump system. The cable includes one or more conductors of uninsulated wire strands that are loosely packed so as to move relative one another during cable flexure. The driveline cable may include a plurality of conductors, each comprised of multiple uninsulated bundles of uninsulated, loosely packed wire strands of a conductive material, that are wrapped about a central core. The cable may include at least six conductors, each conductor having at least 200 wire strands of a 30 gauge or higher. The cable may include the plurality of wire strands wound in a Litz style configuration to provide improved durability over many cycles of use at reduced cost, improved integrity of the electrical connection and reduced diameter. 1. A driveline cable for an implantable heart pump , the driveline cable comprising:a plurality of conductors wound along a longitudinal axis of the cable, each conductor comprising a plurality of uninsulated wire strands disposed within an outer insulating layer, wherein the plurality of uninsulated wire strands in each cable are loosely packed such that a majority of the uninsulated wire strands are movable relative other wire strands when the conductor is flexed; andan outer jacket disposed about the wound plurality of conductors.2. The driveline cable of claim 1 , wherein the plurality of strands of each conductor comprise a plurality of uninsulated bundles of wire strands wound together in a first pattern along a longitudinal axis of the conductor.3. The driveline cable of claim 2 , wherein each bundle comprises a plurality of bunches of wire strands wound together in a second pattern along a longitudinal axis of the respective bundle.4. The driveline cable of claim 3 , wherein the each bunch of wire strands comprises a group of wire strands wound ...

Transparent Conductive Film

A transparent conductive film () that has a substrate () having a surface (), a nanowire layer () over one or more portions of the surface () of the substrate (), and a conductive layer () on the portions comprising the nanowire layer (), the conductive layer () comprising carbon nanotubes (CNT) and a binder. 1. A transparent conductive film (TCF) , comprising:a substrate having a surface;a nanowire layer over one or more portions of the surface of the substrate; anda conductive layer on the portions comprising the nanowire layer, the conductive layer comprising carbon nanotubes (CNT) and a binder.2. The TCF of claim 1 , wherein the nanowires comprise silver or copper nanowires.3. The TCF of claim 1 , wherein the nanowire layer comprises a nanowire binder.4. The TCF of claim 1 , wherein the nanowire layer comprises an additive that is arranged to modify an optical property of the nanowire layer.5. The TCF of claim 4 , wherein the additive comprises an optical brightener.6. The TCF of claim 1 , wherein the nanowire layer comprises from about 10 mg/mto about 100 mg/mnanowires.7. The TCF of claim 1 , wherein the nanowire layer is on portions that together comprise less than all of the surface of the substrate.8. The TCF of claim 1 , wherein the conductive layer binder comprises a polymer.9. The TCF of claim 8 , wherein the conductive layer binder comprises an ionomer.10. The TCF of claim 9 , wherein the conductive layer binder comprises a sulfonated tetrafluoroethylene based fluoropolymer-copolymer.11. The TCF of claim 1 , wherein the conductive layer binder has an index of refraction no greater than about 1.5.12. The TCF of claim 1 , wherein the conductive layer further comprises a viscosity modifier.13. The TCF of claim 1 , wherein the conductive layer further comprises at least one of conductive nanoparticles and graphene.14. The TCF of claim 1 , further comprising a tie layer on the substrate that promotes adhesion to the substrate of at least one of the nanowires ...

INSULATED WIRE

An insulated wire that has a stranded wire conductor, and an insulator that covers an outer circumference of the stranded wire conductor. The stranded wire conductor is made up of at least a plurality of copper-based element wires twisted together, and has been heat-treated after circular compression. The copper-based element wire(s) has (have) an Ni-based plated layer on the surface. The Ni-based plated later has been compressed by the circular compression. The insulator is composed of a cross-linked ethylene-tetrafluoroethylene based copolymer, and has a heating deformation rate in the range of 65% or more, as determined under predetermined conditions using predetermined formulae in conformity with ISO6722. 1. An insulated wire comprising a stranded wire conductor , and an insulator that covers an outer circumference of the stranded wire conductor , whereinthe insulated wire is configured to be used in a state of being in contact with an oil composed of AT fluid or CVT fluid,the stranded wire conductor is made up of at least a plurality of copper-based element wires that are twisted together, and has been heat-treated after circular compression,the copper-based element wires have an Ni-based plated layer on a surface thereof,the Ni-based plated layer has been compressed by the circular compression, andthe insulator is composed of a cross-linked ethylene-tetrafluoroethylene based copolymer anda heating deformation rate of the insulator is 65% or more at the time after an edge of 0.7 mm in thickness is pressed against a surface of the insulator with a Load defined by Formula 1 and is kept under an atmosphere at 220° C. for 4 hours in conformity with ISO6722, Load [N]=0.8×√{i×(2D−i)} (Formula 1)where, D is a finished outer diameter [mm] of the insulated wire, and i is a thickness [mm] of the insulator, {'br': None, 'Heating Deformation Rate (%)−100×(Minimum Wire Outer Diameter [mm] after subjected to Heating Deformation Outer Diameter [mm] of Stranded Wire Conductor ...

POWER/FIBER HYBRID CABLE

The present disclosure relates to a hybrid cable having a jacket with a central portion positioned between left and right portions. The central portion contains at least one optical fiber and the left and right portions contain electrical conductors. The left and right portions can be manually torn from the central portion. 1. A hybrid cable comprising:an outer jacket having a transverse cross-sectional profile that defines a major axis and a minor axis, the outer jacket having a height measured along the minor axis and a width measured along the major axis, the width being greater than the height such that the transverse cross-sectional profile of the outer jacket is elongated along the major axis, the outer jacket including a central opening;an intermediate layer that lines the central opening, the intermediate layer defining a passage;at least one optical fiber positioned within the passage, wherein the intermediate layer is positioned between the outer jacket and the at least one optical fiber; andfirst and second electrical conductors embedded in the outer jacket;wherein the central opening is disposed between the first and second electrical conductors; andwherein the central opening defines a first cross-dimension and the first and second electrical conductors each define a second cross-dimension, the first cross-dimension being greater than the second cross-dimension.2. The hybrid cable of claim 1 , wherein the first and second electrical conductors have a stranded construction.3. The hybrid cable of claim 1 , wherein the intermediate layer is a tensile strength structure.4. The hybrid cable of claim 3 , wherein the tensile strength structure includes aramid yarns.5. The hybrid cable of claim 3 , wherein the tensile strength structure is anchored to structure to limit the transfer of tensile load to the at least one optical fiber.6. The hybrid cable of claim 5 , wherein the structure is a fiber optic connector.7. The hybrid cable of claim 3 , wherein the ...

METHOD OF FORMING A SOLDER BUMP STRUCTURE

A method of the present invention includes preparing a substrate having a surface on which a electrode pad is formed, forming a resist layer on the substrate, the resist layer having an opening on the electrode pad, filling conductive paste in the opening of the resist layer; sintering the conductive paste in the opening to form a conductive layer which covers a side wall of the resist layer and a surface of the electrode pad in the opening, a space on the conductive layer leading to the upper end of the opening being formed, filling solder in the space on the conductive layer and removing the resist layer. 1. A solder bump structure comprising:a metal pillar formed on an electrode pad, the metal pillar having a cone-shaped surface, a substantially perpendicular outside wall, and a conformal cross-section; anda solder formed on the surface of the metal pillar, the solder having a convex top surface.2. The solder bump structure according to claim 1 , wherein the solder is in contact with the whole of the cone-shaped surface of the metal pillar.3. The solder bump structure according to claim 1 , wherein the metal pillar comprises at least one of copper claim 1 , nickel claim 1 , silver or gold.4. The solder bump structure according to claim 1 , wherein a thickness of a central portion of the metal pillar is in a range of ⅕ to ⅔ of a length from the surface of an electrode pad to the top surface of the solder.5. The solder bump structure according to claim 4 , wherein the electrode pad comprises aluminum.6. The solder bump structure according to claim 1 , wherein a thickness of a central portion of the metal pillar is in a range of 1 to 50 micrometers.7. A solder bump structure comprising:a metal pillar formed on an electrode pad and in an opening of a resist layer, the metal pillar having a cone-shaped surface, a substantially perpendicular outside wall connected to a side wall in the opening of the resist layer, and a conformal cross-section; anda solder formed on ...