Process for production of magnetic thin film, magnetic thin film, and magnetic material

The present invention provides a process for production of a magnetic thin film which has insulation properties, serves as a permanent magnet, and has improved residual magnetization in comparison with prior arts, the magnetic thin film, and a magnetic material. When a magnetic thin film 3 is formed, an external magnetic field with a predetermined intensity is applied to a coating liquid containing magnetic particles containing epsilon-type iron-oxide-based compounds which have insulation properties and which serve as a permanent magnet, and the coating liquid is let cured in order to form the magnetic thin film 3 . Accordingly, the magnetic particles containing the epsilon-type iron-oxide-based compounds can be fixed while being oriented regularly in a magnetization direction. This realizes the process for production of the magnetic thin film 3 which has insulation properties and which serve as a permanent magnet, the magnetic thin film 3 , and a magnetic material 1.

MAGNETIC PARTICLE AND METHOD

A magnetic particle () has a layered structure () between a top surface of the particle and an opposed bottom surface of the particle. Layers of the structure include one or more nonmagnetic layer(s) and one or more magnetized layer(s). The ratio of a lateral dimension of the one or more magnetized layers to the aggregate thickness of the magnetized layer or layers is greater than A plurality of such magnetic particles () can be functionalised and marked with readable codes () corresponding to the functionalisation, for use for performing assays such as bioassays. 1. A magnetic particle , comprising a layered structure between a top surface of the particle and an opposed bottom surface of the particle , the layers including one or more magnetized layers;in which the ratio of a lateral dimension of the one or more magnetized layers to a thickness or aggregate thickness of the magnetized layer or layers is greater than 500.2. (canceled)3. A magnetic particle according to claim 1 , in which the ratio of the lateral dimension of the one or more magnetized layers to the thickness or aggregate thickness of the magnetized layer or layers is greater than 1000 claim 1 , and preferably greater than 2000.4. A magnetic particle according to claim 1 , in which the magnetized layer or layers comprise a volume V of magnetic material having a magnetisation or average magnetisation Ms claim 1 , a cross section of the layer or layers has an aspect ratio AR claim 1 , and AR/Ms(with Ms measured in A/m) is greater than 8*10(A/m).5. A magnetic particle according to claim 1 , in which the magnetized layer or layers comprise a volume V of magnetic material having a magnetisation or average magnetisation Ms claim 1 , a cross section of the layer or layers has an aspect ratio AR claim 1 , and in which AR/Ms (with Ms measured in A/m) is greater than 0.001 (A/m).6. A magnetic particle according to claim 1 , in which the top and bottom surfaces of the particle are separated by a particle ...

POWDER FOR DUST CORES, METHOD FOR PRODUCING SAME, DUST CORE AND METHOD FOR PRODUCING DUST CORE

A powder for dust cores includes an aggregate of soft magnetic particles, each of which includes a soft magnetic metal particle, and a ferrite film that covers a surface of the soft magnetic metal particle and includes ferrite crystal grains having a spinel structure. A diffraction peak derived from the ferrite crystal grains exists in a powder X-ray diffraction pattern. By a method for producing a powder for dust cores, a raw material powder that includes an aggregate of soft magnetic metal particles is prepared. Furthermore, many ferrite fine particles are formed on a surface of each of the soft magnetic metal particles of the raw material powder. Additionally, the ferrite fine particles are coarsely crystallized through heat treatment to form a ferrite film, which includes ferrite crystal grains having a spinel structure, on the surface of the each of the soft magnetic metal particles. 1. A powder for dust cores , comprising an aggregate of soft magnetic particles , each of which includes:a soft magnetic metal particle; anda ferrite film that covers a surface of the soft magnetic metal particle and includes ferrite crystal grains having a spinel structure, wherein a diffraction peak derived from the ferrite crystal grains exists in a powder X-ray diffraction pattern, and the ferrite film includes a part where an interface between the ferrite crystal grains has a straight-line shape in a sectional view of the ferrite film.2. The powder for dust cores according to claim 1 , wherein a size of each of the ferrite crystal grains is 10 nm or larger.3. (canceled)4. The powder for dust cores according to claim 1 , wherein a half-value width of the diffraction peak is 0.5° or less.5. The powder for dust cores according to claim 1 , wherein a chemical composition of the ferrite film is MFeO claim 1 , where:M is at least one metal element selected from a group consisting of Fe, Cu, Mg, Ni, Zn, and Mn; andX satisfies an expression 0 Подробнее

METHOD OF FABRICATION OF AN ANISOTROPY MAGNETIC LAYER OF A PATTERNED STACK

Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer. 120-. (canceled)21. A method , comprisingpatterning features into a layer of magnetic material to form a patterned magnetic layer;oxidizing tops of the features to form oxidized tops of the features;applying a first protective material over the features;removing an excess of the first protective material down to at least the oxidized tops of the features to form a planarized layer; andapplying a second protective material over the planarized layer.22. The method of claim 21 ,wherein patterning the features comprises etching the features into the layer of magnetic material through a mask configured for patterning the features.23. The method of claim 22 ,wherein oxidizing the tops of the features also removes the mask.24. The method of claim 21 ,wherein applying the first protective material comprises spin coating the first protective material over and in-between the features and subsequently cross-linking the first protective material.25. The method of claim 21 ,wherein removing the excess of the first protective material comprises using the oxidized tops of the features as a stop layer for removing the excess of the first protective material.26. The method of claim 25 , further comprising 'wherein the magnetic layer comprises a low reminiscence in a polar direction and no hysteresis in a transverse direction, and', 'depositing a continuous magnetic layer over the planarized layer,'}applying the second protective material over the continuous magnetic layer.27. The method of claim 25 , further comprisingfurther removing the excess of the first protective material including the oxidized tops of the features to form the planarized ...

Method for fabricating semiconductor structure

A semiconductor structure is provided. The semiconductor structure includes a substrate; and a plurality of parallel first conductive layers formed on the substrate. The semiconductor structure also includes a composite magnetic structure having a plurality of magnetic layers and a plurality of insulation layers with a sandwich arrangement formed on a portion of the substrate and portions of surfaces of the plurality of first conductive layers. Further, the semiconductor structure includes a plurality of first conductive vias and a plurality of second conductive vias formed on the first conductive layers at both sides of the composite magnetic structure. Further, the semiconductor structure also includes a plurality of second conductive layers formed on a top surface of the composite magnetic structure, top surfaces of the first conductive vias, and top surfaces of the second conductive vias to form at least one coil structure wrapping around the composite magnetic structure.

COMPOSITION AND METHOD OF MAKING A MONOLITHIC HETEROSTRUCTURE OF MULTIFERROIC THIN FILMS

A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.

MAGNETIC SHEET, ELECTRONIC DEVICE USING SAME, AND METHOD FOR MANUFACTURING MAGNETIC SHEET

Provided is a thin sheet-shaped magnetic body holding on a resin film with an adhesive layer sandwiched between the thin sheet-shaped magnetic body and the resin film, wherein the thin sheet-shaped magnetic body is made from an Fe-based metal magnetic material, has a thickness of 15 μm to 35 μm and has an AC relative magnetic permeability μr of 220 or more and 770 or less at a frequency of 500 kHz. 1. A magnetic sheet comprising:a resin film; anda thin sheet-shaped magnetic body held on the resin film with an adhesive layer sandwiched between the thin sheet-shaped magnetic body and the resin film, the thin sheet-shaped magnetic body made from an Fe-based metal magnetic material,wherein the thin sheet-shaped magnetic body has a thickness of 15 μm to 35 μm; andthe thin sheet-shaped magnetic body has an AC relative magnetic permeability μr of 220 or more and 770 or less at a frequency of 500 kHz.2. The magnetic sheet according to claim 1 , wherein a plurality of thin sheet-shaped magnetic bodies are attached to the resin film in a state where the thin sheet-shaped magnetic bodies are disposed next to each other on the resin film.3. The magnetic sheet according to claim 1 , wherein the thin sheet-shaped magnetic body is divided into a plurality of pieces while a state where the thin sheet-shaped magnetic body is stuck on the resin film is maintained.4. The magnetic sheet according to claim 1 , wherein the thin sheet-shaped magnetic body is in a non-crack state.5. An electronic device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the magnetic sheet according to ; and'}an electronic compass disposed closely to the magnetic sheet, the electronic compass including a geomagnetic sensor.6. A method for manufacturing a magnetic sheet comprising:a heat treating step of subjecting a thin sheet-shaped magnetic body made from an Fe-based metal magnetic material and having a thickness of 15 μm to 35 μm to a heat treatment to set an AC relative magnetic permeability ...

MAGNETIC SHEET AND METHOD FOR MANUFACTURING THE SAME

Disclosed herein is a magnetic sheet capable of having flexibility and being folded, and a method for manufacturing the same. The magnetic sheet made of a magnetic material includes prominence and depression parts continuously formed over one surface of the magnetic sheet; and cracks formed between a bottom surface of the prominence part and a lower surface of the magnetic sheet. 1. A magnetic sheet made of a magnetic material , comprising:prominence and depression parts continuously formed over one surface of the magnetic sheet; andcracks formed between a bottom surface of the prominence part and a lower surface of the magnetic sheet.2. The magnetic sheet according to claim 1 , wherein the prominence part and the depression part have a ‘’ shape claim 1 , respectively.3. The magnetic sheet according to claim 1 , wherein the prominence part has a transversal width corresponding to 0.5 to 1.5 of a transversal width of the depression part.4. The magnetic sheet according to claim 1 , wherein the prominence part has a longitudinal width corresponding to 0.5 to 1.5 of a longitudinal width of the depression part.5. The magnetic sheet according to claim 1 , wherein the prominence and depression part has a thickness 0.5 to 1.5 of a spaced distance between a bottom surface of the prominence part and a lower surface of the magnetic sheet.6. The magnetic sheet according to claim 1 , further comprising a protective film adhered to a surface on which the prominence and depression part is formed in the magnetic sheet claim 1 , and an adhesive film adhered to an opposite surface to the surface on which the prominence and depression part is formed.7. A method for manufacturing a magnetic sheet claim 1 , the method comprising:(a) preparing a green sheet made of a magnetic material;(b) positioning a screen on the green sheet, the screen including rectangular shaped opening parts continuously formed on the entire surface thereof;(c) transferring a magnetic paste on a surface of the ...

Magnetic Diode in Artificial Magnetic Honeycomb Lattice

A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: 1. A method of making a making a magnetic artificial honeycomb lattice , the method comprising depositing a layer of magnetic material on a substrate , wherein:{'sup': 2', '2, 'the substrate comprises an artificial honeycomb lattice topography, wherein the artificial lattice topography is over a surface area of the substrate that is in a range in a range of about 100 mmto about 900 mm, and wherein the artificial lattice topography comprises a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm;', '(ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and', '(iii) have depths extending inward from the surface of the substrate that are substantially uniform and an average depth that is in a range of about 5 nm to about 10 nm; and, '(a) the hexagonal cylindrical pores (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm;', '(ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and', '(iii) heights that are substantially uniform corresponding to the depths of the hexagonal cylindrical pores; and, '(b) the connecting elements havewherein the layer of magnetic material is deposited on substantially only the uppermost surfaces of the connecting elements of the artificial honeycomb lattice topography of the substrate, and wherein the magnetic material layer has a thickness that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm.2. The method of claim 1 , wherein:{'sup': 2', '2, 'the surface area of the substrate is in a range 225 mmto about 400 mmand a ...

Fe-Co-Si ALLOY MAGNETIC THIN FILM

An Fe—Co—Si alloy magnetic thin film contains, in terms of atomic ratio, 20% to 25% Co and greater than 0% to 20% Si. The Fe—Co—Si alloy magnetic thin film primarily has a body-centered cubic crystal structure. Among three <100> directions of the crystal structure, one of the three <100> directions is perpendicular to a substrate surface and the other two <100> directions are parallel to the substrate surface. The Fe—Co—Si alloy magnetic thin film deposited onto MgO (100) has suitable magnetic properties, that is, a high magnetization of 1100 to 1725 emu/cc, a coercive force of less than 95 Oe, and an effective damping parameter of less than 0.001. 1. An Fe—Co—Si alloy magnetic thin film comprising , in terms of atomic ratio:20% to 25% Co; andgreater than 0% to 20% Si,the Fe—Co—Si alloy magnetic thin film comprises a body-centered cubic crystal structure,wherein, among three <100> directions of the crystal structure, one of the three <100> directions is perpendicular to a substrate surface and the other two <100> directions are parallel to the substrate surface.2. The Fe—Co—Si alloy magnetic thin film of claim 1 , wherein the Fe—Co—Si alloy magnetic thin film consists essentially of a body-centered cubic crystal structure.3. The Fe—Co—Si alloy magnetic thin film of claim 1 , wherein the Fe—Co—Si alloy thin film is grown on a MgO single crystal substrate with (100) surface.4. The Fe—Co—Si alloy magnetic thin film of claim 2 , wherein the Fe—Co—Si alloy thin film is grown on a MgO single crystal substrate with (100) surface. The present disclosure relates to a soft magnetic material used in a high-frequency range that covers the gigahertz range and specifically to an iron (Fe)-cobalt (Co)-silicon (Si)-based magnetic thin film having a large magnetization, a low effective damping parameter, and a small coercive force.With increases in capacity and speed provided by communication technologies, magnetic materials used for producing electronic components, such as ...

ACOUSTIC EXCITATION AND DETECTION OF SPIN WAVES

Apparatus for generating spin waves comprising a body () of magnetic material and an elastic wave generator (), wherein the body () has a surface () and the elastic wave generator () is arranged to transmit elastic waves so that they propagate through the body () towards the surface () and are reflected at the surface to form a standing elastic wave in the body (), thereby generating spin waves. 1. Apparatus for generating spin waves comprising a body of magnetic material and an elastic wave generator , wherein the body has a surface and the elastic wave generator is arranged to transmit elastic waves so that they propagate through the body towards the surface and are reflected at the surface to form a standing elastic wave in the body , thereby generating spin waves.2. Apparatus according to wherein the body comprises a film having two opposite surfaces and the elastic wave generator is arranged to transmit the elastic waves in a direction perpendicular to the surfaces.3. Apparatus according wherein the film has a thickness and the wavelength of the elastic waves in the body is of the order of the film thickness.4. Apparatus according to further comprising a substrate having a first side and a second side which is opposite to the first side claim 2 , wherein the film is formed on the first side of the substrate and the elastic wave generator is formed on the second side of the substrate.5. Apparatus according to wherein the film is in the form of a strip claim 2 , having a length claim 2 , and the spin waves can propagate along the length of the strip.6. Apparatus according to wherein the film is in the form of a layer in which the spin waves can propagate in at least two substantially perpendicular directions.7. Apparatus according to wherein: the surface has a surface feature therein claim 1 , the elastic wave generator is arranged to transmit the elastic waves so that they propagate in a propagation direction towards the surface feature claim 1 , whereby the ...

ELECTROSTATICALLY TUNABLE MAGNETOELECTRIC INDUCTORS WITH LARGE INDUCTANCE TUNABILITY

An electrostatically tunable magnetoelectric inductor including: a substrate; a piezoelectric layer; and a magnetoelectric structure comprising a first electrically conductive layer, a magnetic film layer, a second electrically conductive layer, and recesses formed so as to create at least one electrically conductive coil around the magnetic film layer; with a portion of the substrate removed so as to enhance deformation of the piezoelectric layer. Also disclosed is a method of making the same. This inductor displays a tunable inductance range of >5:1 while consuming less than 0.5 mJ of power in the process of tuning, does not require continual current to maintain tuning, and does not require complex mechanical components such as actuators or switches. 1. A method of manufacturing an electrostatically tunable magnetoelectric inductor , the method comprising:forming a piezoelectric layer on a substrate; forming a first electrically conductive layer disposed above the piezoelectric layer;', 'forming an isolation layer configured to translate changes in strain;', 'forming a magnetic film layer disposed over the isolation layer;', 'forming a second electrically conductive layer, disposed over the magnetic film layer and wherein the second electrically conductive layer is in electrical communication with the first electrically conductive layer so as to form at least one electrically conductive coil around the magnetic film layer., 'forming a magnetoelectric structure over the piezoelectric layer by2. The method of claim 1 , further comprising forming at least one recess wherein the at least one recess is formed so as to allow the first and second electrically conductive layer to be in electrical communication with each other.3. The method of claim 2 , wherein the recesses are formed by application of a photoresist and etching.4. The method of claim 3 , wherein the photoresist is patterned.5. The method of claim 2 , wherein the first and second electrically conductive ...

MAGNETO-DIELECTRIC SUBSTRATE, CIRCUIT MATERIAL, AND ASSEMBLY HAVING THE SAME

A magneto-dielectric substrate includes a first dielectric layer, a second dielectric layer spaced apart from the first dielectric layer, and at least one magnetic reinforcing layer disposed between and in intimate contact with the first dielectric layer and the second dielectric layer. 1. A magneto-dielectric substrate , comprising:a first dielectric layer;a second dielectric layer spaced apart from the first dielectric layer; andat least one magnetic reinforcing layer disposed between and in intimate contact with the first dielectric layer and the second dielectric layer.2. The magneto-dielectric substrate of claim 1 , wherein the magnetic reinforcing layer comprises fibers claim 1 , wherein the fibers are ferrite fibers claim 1 , ferrite alloy fibers claim 1 , cobalt fibers claim 1 , cobalt alloy fibers claim 1 , iron fibers claim 1 , iron alloy fibers claim 1 , nickel fibers claim 1 , nickel alloy fibers claim 1 , polymer fibers comprising particulate ferrite claim 1 , a particulate ferrite alloy claim 1 , particulate cobalt claim 1 , a particulate cobalt alloy claim 1 , particulate iron claim 1 , a particulate iron alloy claim 1 , particulate nickel claim 1 , a particulate nickel alloy claim 1 , or a combination comprising at least one of the foregoing claim 1 , preferably hexaferrite claim 1 , magnetite claim 1 , or MFeO claim 1 , wherein M is at least one of Co claim 1 , Ni claim 1 , Zn claim 1 , V claim 1 , or Mn.3. The magneto-dielectric substrate of claim 1 , wherein the magnetic reinforcing layer comprises polymer or glass fibers coated with ferrite claim 1 , a ferrite alloy claim 1 , cobalt claim 1 , a cobalt alloy claim 1 , iron claim 1 , an iron alloy claim 1 , nickel claim 1 , a nickel alloy claim 1 , or a combination comprising at least one of the foregoing magnetic materials claim 1 , or a combination comprising at least one of the foregoing fibers claim 1 , preferably hexaferrite claim 1 , magnetite claim 1 , or MFeO claim 1 , wherein M is at least ...

CHIP-SCALE RESONANT GYRATOR FOR PASSIVE NON-RECIPROCAL DEVICES

An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer. 1. An integrated circuit , comprising:a first metal electrode disposed on a semiconductor substrate, the first metal electrode having a first lead;a piezoelectric layer disposed on the first metal electrode;a second metal electrode disposed on the piezoelectric layer, the second metal electrode having a second lead, wherein the first lead and the second lead form an electrical port across which to receive an alternating current (AC) voltage, wherein the first metal electrode and the second metal electrode are to apply the AC voltage across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer;a magnetostrictive layer disposed on the second metal electrode, wherein the magnetostrictive layer is to translate the time-varying strain, received via a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field; anda metal coil having a magnetic port, the metal coil disposed on the magnetostrictive layer and to induce a current at the magnetic port based on the time-varying electromagnetic field generated by the magnetostrictive layer.2. The integrated circuit of claim 1 , wherein the first metal ...

Modified bismuth-substituted synthetic garnets for electronic applications

Embodiments disclosed herein include methods of modifying synthetic garnets used in RF applications to reduce or eliminate Yttrium or other rare earth metals in the garnets without adversely affecting the magnetic properties of the material. Some embodiments include substituting Bismuth for some of the Yttrium on the dodecahedral sites and introducing one or more high valency ions to the octahedral and tetrahedral sites. Calcium may also be added to the dodecahedral sites for valency compensation induced by the high valency ions, which could effectively displace all or most of the Yttrium (Y) in microwave device garnets. The modified synthetic garnets with substituted Yttrium (Y) can be used in various microwave magnetic devices such as circulators, isolators and resonators. 1. (canceled)2. A modified synthetic garnet having a composition represented by the formula BiYCaZrFeO , x being between 0.5 and 1.0 , bismuth being substituted for yttrium on a dodecahedral site , zirconium being substituted for iron on an octahedral site , and calcium being added to a dodecahedral site to replace yttrium and balance charges with zirconium.3. The modified synthetic garnet of wherein x is between 0.6 and 0.8.4. The modified synthetic garnet of wherein x is 0.5.5. A method of manufacturing a bismuth-modified synthetic garnet claim 3 , the method comprising:providing a material include oxides, carbonates, or a combination thereof;{'sub': x', '3-x-0.35', '0.35', '0.35', '4.65', '12, 'forming a composition represented by the formula BiYCaZrFeO, x being between 0.5 and 1.0, bismuth being substituted for yttrium on a dodecahedral site, zirconium being substituted for iron on an octahedral site, and calcium being added to the dodecahedral site to replace yttrium and balance charges with zirconium.'}6. The method of wherein x is between 0.6 and 0.8.7. The method of wherein x is 0.5.8. The method of further including forming an electronic device from the composition.9. The method of ...

Materials, devices and methods related to below-resonance radio-frequency circulators and isolators

Materials, devices and methods related to below-resonance radio-frequency (RF) circulators and isolators. In some embodiments, a circulator can include a conductor having a plurality of signal ports, and one or more magnets configured to provide a magnetic field. The circulator can further include one or more ferrite disks implemented relative to the conductor and the one or more magnets so that an RF signal can be routed selectively among the signal ports due to the magnetic field. Each of the one or more ferrite disks can include synthetic garnet material having dodecahedral sites, octahedral sites and tetrahedral sites, with bismuth (Bi) occupying at least some of the dodecahedral sites, and aluminum (Al) occupying at least some of the tetrahedral sites. Such synthetic garnet material can be represented by a formula Y 3-x-2y−z Bi x Ca 2y+z Fe 5-y-z-a V y Zr z Al a O 12 . In some embodiments, x≦1.4, y≦0.7, z≦0.7, and a≦0.75.

DEVICES AND METHODS FOR BELOW-RESONANCE RADIO-FREQUENCY APPLICATIONS

Devices and methods for below-resonance radio-frequency applications. In some embodiments, a ferrite device can include a modified yttrium iron garnet material in which bismuth occupies at least some of dodecahedral sites, and aluminum occupies at least some of tetrahedral sites. 1. A ferrite device comprising a modified yttrium iron garnet material in which bismuth occupies at least some of dodecahedral sites , and aluminum occupies at least some of tetrahedral sites.2. The ferrite device of wherein the octahedral sites are substantially free of aluminum.3. The ferrite device of wherein the material has a dielectric constant value that is at least 25.4. The ferrite device of wherein the material has a 3-db ferrimagnetic resonance linewidth value that is less than 50 Oersted.5. The ferrite device of wherein the material has a saturation magnetization value in a range of 400 to 1000 Gauss.6. The ferrite device of wherein the modified yttrium iron garnet material is represented by the formula YBiCaFeVZrAlO.7. The ferrite device of wherein bismuth occupies x formula units of dodecahedral sites claim 6 , zirconium occupies z formula units of octahedral sites claim 6 , vanadium occupies y formula units of tetrahedral sites claim 6 , calcium occupies 2y+z formula units of the dodecahedral sites to compensate for a valency imbalance resulting from the presence of zirconium and vanadium claim 6 , aluminum occupies a formula units of the tetrahedral sites while having the octahedral sites substantially free of aluminum.8. The ferrite device of wherein the quantity a is greater than zero such that saturation magnetization of the modified yttrium iron garnet material decreases in a substantially linear manner as the quantity a increases to an upper limit value of at least 0.6.9. The ferrite device of wherein the upper limit of the quantity a is less than or equal to 0.75.10. The ferrite device of wherein the quantity x is greater than zero and less than or equal to 1.4.11. The ...

Apparatus for spin injection enhancement and method of making the same

A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

Layered product for magnetic element, thermoelectric conversion element having layered product, and method of manufacturing the same

A magnetic element according to the present invention is formed of a layered product having a magnetic insulator film formed on a substrate including a material having no crystal structure. The magnetic insulator film has a columnar crystal structure.

MAGNETORESISTANCE EFFECT ELEMENT

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of ABO(0 Подробнее

ACOUSTIC EXCITATION AND DETECTION OF SPIN WAVES

Apparatus for generating spin waves comprising a body () of magnetic material and an elastic wave generator (), wherein the body () has a surface () and the elastic wave generator () is arranged to transmit elastic waves so that they propagate through the body () towards the surface () and are reflected at the surface to form a standing elastic wave in the body (), thereby generating spin waves. 129-. (canceled)30. Apparatus for generating elastic waves from spin waves , the apparatus comprising a waveguide along which spin waves can propagate , a piezoelectric element , two electrodes located on opposite sides of the piezoelectric element , and an electrical connection between the two electrodes , wherein the piezoelectric element and the electrodes are mounted on the waveguide whereby propagation of spin waves along the waveguide will generate an oscillating electrical voltage across the piezoelectric element to generate an elastic wave.31. Apparatus according to further comprising an elastic wave detector arranged to detect the elastic wave thereby to generate a detection signal wherein the waveguide has first and second opposite sides claim 30 , the piezoelectric element is located on a first one of the opposite sides claim 30 , and the elastic wave detector is located on a second one of the opposite sides whereby the elastic waves will propagate through the waveguide between the piezoelectric element and the elastic wave detector.32. Apparatus according to wherein the piezoelectric element and the elastic wave detector are located on opposite sides of the waveguide so that the elastic wave will propagate through the waveguide between the piezoelectric element and the elastic wave detector.33. A method of detecting spin waves in a waveguide claim 31 , the method comprising providing a piezoelectric element having first and second opposite sides claim 31 , and a pair of electrodes each located on a respective one of the opposite sides claim 31 , the electrodes ...

Magnetoresistance effect element

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB 2 O x (0<x≤4), and has a spinel structure in which cations are arranged in a disordered manner, the tunnel barrier layer has a lattice-matched portion and a lattice-mismatched portion, A is a divalent cation of plural non-magnetic elements, B is an aluminum ion, and in the composition formula, the number of the divalent cation is smaller than half the number of the aluminum ion.

Electrostatically tunable magnetoelectric inductors with large inductance tunability

An electrostatically tunable magnetoelectric inductor including: a substrate; a piezoelectric layer; and a magnetoelectric structure comprising a first electrically conductive layer, a magnetic film layer, a second electrically conductive layer, and recesses formed so as to create at least one electrically conductive coil around the magnetic film layer; with a portion of the substrate removed so as to enhance deformation of the piezoelectric layer. Also disclosed is a method of making the same. This inductor displays a tunable inductance range of >5:1 while consuming less than 0.5 mJ of power in the process of tuning, does not require continual current to maintain tuning, and does not require complex mechanical components such as actuators or switches.

FERRITE SHEET, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC COMPONENT COMPRISING SAME

A ferrite sheet includes acicular ferrite powder, and has a uniaxially-oriented magnetic direction. The ferrite sheet is capable of remarkably increasing magnetic permeability and saturation magnetization, and accordingly is capable of remarkably improving the power efficiency of an electronic device by minimizing magnetic field leakage when being applied to a shielding sheet. 1: A ferrite sheet comprising an acicular ferrite powder and having a uniaxially-oriented magnetic direction.2: The ferrite sheet of claim 1 , wherein the ferrite powder includes at least one selected from the group consisting of hard ferrite and soft ferrite.3: The ferrite sheet of claim 2 , wherein the soft ferrite is at least one selected from the group consisting of Ni—Zn based ferrite claim 2 , Ni—Zn—Cu based ferrite claim 2 , Mn—Zn based ferrite claim 2 , Mg—Zn based ferrite claim 2 , and Ni—Mn—Zn based ferrite.4: The ferrite sheet of claim 1 , wherein magnetic permeability is in a range of 100 to 5000 in a frequency range of 100 KHz to 30 MHz.5: The ferrite sheet of claim 1 , wherein a thickness is in a range of 10 μm to 200 μm.6: A method for manufacturing a ferrite sheet claim 1 , comprising:manufacturing a ferrite green sheet comprising an acicular ferrite powder; andapplying a magnetic field during or after the manufacturing of the ferrite green sheet to uniaxially orient a magnetic direction.7: The method of claim 6 , wherein the applying of the magnetic field is performed together with sintering.8: The method of claim 7 , wherein the sintering is performed in a temperature range of 800° C. to 1000° C.9: A method for manufacturing a ferrite sheet complex claim 7 , comprising:{'claim-ref': {'@idref': 'CLM-00006', 'claim 6'}, 'attaching a protective sheet to at least one surface of the ferrite sheet manufactured according to ; and'}attaching a double-sided adhesive sheet to another surface of the ferrite sheet to form a ferrite sheet complex.10: The method of claim 9 , further ...

COLD SPRAY OF BRITTLE MATERIALS

In one aspect of an inventive concept, a product includes a substrate and a material formed from a precursor powder, where the material includes a plurality of particles from the precursor powder deposited on the substrate. The plurality of particles have structural characteristics defined by an impact of the particles on the substrate and/or on previously deposited particles. Moreover, the material has a microstructure, where the microstructure of the material is substantially the same as a microstructure of the precursor powder. The microstructure of the material is characterized by at least one property, where the at least one property is substantially the same as a corresponding at least one property of the precursor powder. 1. A product , comprising:a substrate; anda material formed from a precursor powder, the material comprising:a plurality of particles from the precursor powder deposited on the substrate,wherein the plurality of particles have structural characteristics defined by an impact of the particles on the substrate and/or on previously deposited particles,wherein the material has a microstructure, wherein the microstructure of the material is substantially the same as a microstructure of the precursor powder,the microstructure of the material being characterized by at least one property, wherein the at least one property is substantially the same as a corresponding at least one property of the precursor powder.2. A product as recited in claim 1 , wherein the material comprises a magnetic material claim 1 , wherein the at least one property is selected from the group consisting of: coercivity claim 1 , remnant magnetization claim 1 , and density.3. A product as recited in claim 2 , wherein the magnetic material is essentially pure magnetic material.4. A product as recited in claim 1 , wherein the material comprises a ferroic material.5. A product as recited in claim 1 , wherein a multiferroic material includes at least two materials selected from the ...

MULTI-LAYER MAGNETO-DIELECTRIC MATERIAL

A magneto-dielectric material operable between a minimum frequency and a maximum frequency, having: a plurality of layers that alternate between a dielectric material and a ferromagnetic material, lowermost and uppermost layers of the plurality of layers each being a dielectric material; each layer of the plurality of ferromagnetic material layers having a thickness equal to or greater than 1/15a skin depth of the respective ferromagnetic material at the maximum frequency, and equal to or less than ⅕the skin depth of the respective ferromagnetic material at the maximum frequency; each layer of the plurality of dielectric material layers having a thickness and a dielectric constant that provides a dielectric withstand voltage across the respective thickness of equal to or greater than 150 Volts peak and equal to or less than 1,500 Volts peak; and, the plurality of layers having an overall thickness equal to or less than one wavelength of the minimum frequency in the plurality of layers. 1. A magneto-dielectric material operable over an operating frequency range equal to or greater than a defined minimum frequency and equal to or less than a defined maximum frequency , the magneto-dielectric material comprising:a plurality of layers in conforming direct contact with respective adjacent layers that alternate between a dielectric material and a ferromagnetic material forming a plurality of dielectric material layers in alternating arrangement with a plurality of ferromagnetic material layers, a lowermost layer and an uppermost layer of the plurality of layers each being a dielectric material;{'sup': th', 'th, 'each layer of the plurality of ferromagnetic material layers having a thickness equal to or greater than 1/15a skin depth of the respective ferromagnetic material at the defined maximum frequency, and equal to or less than ⅕the skin depth of the respective ferromagnetic material at the defined maximum frequency;'}each layer of the plurality of dielectric material ...

Mitigation of contamination of electroplated cobalt-platinum films on substrates

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a device includes a substrate, a titanium nitride diffusion barrier layer formed upon the substrate, a titanium layer formed upon the titanium nitride diffusion barrier layer, a platinum seed layer, and a cobalt-platinum magnetic layer formed upon the platinum seed layer. Based in part on the use of the titanium nitride diffusion barrier layer and/or the platinum seed layer, improvements in the interfaces between the layers can be achieved after annealing, with less delamination, and with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer. Further, the cobalt-platinum magnetic layer can be formed at a relatively thin thickness of hundreds of nanometers to a few microns while still maintaining good magnetic properties.

THIN FILM FERRITE LAMINATION

Forming a ferrite thin film laminate includes heating a layered assembly to form a laminate. The layered assembly includes a first coated substrate having a first ferrite layer opposite a first thermoplastic surface and a second coated substrate having a second ferrite layer opposite a second thermoplastic surface to form a laminate. Each coated substrate is formed by forming a ferrite layer on a surface of a thermoplastic substrate. The coated substrates are arranged such that the first ferrite layer contacts the second thermoplastic surface. Heating the layered assembly includes bonding the first coated substrate to the second coated substrate such that the first ferrite layer is sandwiched between a first thermoplastic substrate and a second thermoplastic substrate. The ferrite thin film laminate may include a multiplicity of coated substrates. 1. A method comprising: a first coated substrate having a first ferrite layer opposite a first thermoplastic surface; and', 'a second coated substrate having a second ferrite layer opposite a second thermoplastic surface,', 'wherein the first ferrite layer contacts the second thermoplastic surface., 'heating a layered assembly to form a laminate, the layered assembly comprising2. The method of claim 1 , further comprising forming the layered assembly before heating the layered assembly.3. The method of claim 2 , wherein forming the layered assembly comprises stacking the first coated substrate on the second coated substrate.4. The method of claim 2 , wherein forming the layered assembly comprises positioning the second coated substrate on the first coated substrate.5. The method of claim 1 , wherein the first coated substrate and the second coated substrate have substantially the same dimensions.6. The method of claim 1 , wherein the thickness of the first coated substrate claim 1 , the thickness of the second coated substrate claim 1 , or both is between 10 μm and 100 μm.7. The method of claim 2 , further comprising ...

Magnetic field shielding sheet, method for manufacturing magnetic field shielding sheet, and antenna module using same

Provided are a roll-shaped magnetic field shielding sheet, a method of manufacturing a magnetic field shielding sheet, and an antenna module using the same, which can improve the efficiency of the overall production process by improving a heat treatment process for a thin film magnetic sheet. The magnetic field shielding sheet includes: at least one thin film magnetic sheet; an insulating layer or insulating layers formed on one or either side of the at least one thin film magnetic sheet; and an adhesive layer formed between the insulating layers of the adjacent thin film magnetic sheets to laminate and bond the thin film magnetic sheets, wherein the thin film magnetic sheet is flake-treated to be divided into a plurality of magnetic substance fragments.

RARE EARTH REDUCED GARNET SYSTEMS AND RELATED MICROWAVE APPLICATIONS

Disclosed are synthetic garnets and related devices that can be used in radio-frequency (RF) applications. In some embodiments, such RF devices can include garnets having reduced or substantially nil Yttrium or other rare earth metals. Such garnets can be configured to yield high dielectric constants, and ferrite devices, such as TM-mode circulators/isolators, formed from such garnets can benefit from reduced dimensions. Further, reduced or nil rare earth content of such garnets can allow cost-effective fabrication of ferrite-based RF devices. In some embodiments, such ferrite devices can include other desirable properties such as low magnetic resonance linewidths. Examples of fabrication methods and RF-related properties are also disclosed. 1. (canceled)2. A modified garnet structure comprising:{'sub': 3−x', 'x', '2−y', 'y', '3−z', 'z', '12, 'a bismuth-doped garnet represented by the formula Bi(Ca)Fe(Me)Fe(Me′)O, x being greater than or equal to 1.6 and less than or equal to 2.0, and each of Me and Me′ representing a metal element.'}3. The modified garnet structure of wherein the dielectric constant value is at least 21.4. The modified garnet structure of wherein the dielectric constant value is at least 27.5. The modified garnet structure of wherein the metal element Me includes Zr and the value of y is greater than or equal to 0.35 and less than or equal to 0.75.6. The modified garnet structure of wherein the metal element Me′ includes V and the value of z is greater than or equal to 0 and less than or equal to 0.525.7. The modified garnet structure of wherein the bismuth-doped garnet is substantially free of rare earth elements.8. The modified garnet structure of wherein the garnet material has a ferrimagnetic resonance linewidth value that is less than 12 Oersted.9. A modified garnet structure comprising:{'sub': 3−x', 'x', '2−y', 'y', '3−z', 'z', '12, 'a bismuth-doped garnet represented by the formula Bi(RE or Ca)Fe(Me)Fe(Me′)O, x being greater than or equal to ...

Monocrystalline magneto resistance element, method for producing the same and method for using same

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

Monocrystalline magneto resistance element, method for producing the same and method for using same

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11 , a base layer 12 having a B2 structure laminated on the silicon substrate 11 , a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14 , an upper ferromagnetic layer 16 , and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

RARE EARTH REDUCED GARNET SYSTEMS AND RELATED MICROWAVE APPLICATIONS

Disclosed are synthetic garnets and related devices that can be used in radio-frequency (RF) applications. In some embodiments, such RF devices can include garnets having reduced or substantially nil Yttrium or other rare earth metals. Such garnets can be configured to yield high dielectric constants, and ferrite devices, such as TM-mode circulators/isolators, formed from such garnets can benefit from reduced dimensions. Further, reduced or nil rare earth content of such garnets can allow cost-effective fabrication of ferrite-based RF devices. In some embodiments, such ferrite devices can include other desirable properties such as low magnetic resonance linewidths. Examples of fabrication methods and RF-related properties are also disclosed. 1. (canceled)2. A modified synthetic garnet material comprising:{'sub': 2.15−2x', '0.5', '0.35+2x', '0.35', 'x', '4.65−x', '12, 'a vanadium-doped garnet represented by the formula YBiCaZrVFeO, x being greater than or equal to 0.1 and less than or equal to 0.8, the vanadium being in a tetrahedral site of the garnet and calcium charge balancing the vanadium.'}3. The modified synthetic garnet material of wherein x is less than or equal to 0.5.4. The modified synthetic garnet material of wherein x is 0.5.5. The modified synthetic garnet material of wherein a 3 dB linewidth of the modified synthetic garnet material is about 50.6. The modified synthetic garnet material of wherein a dielectric constant and a density of the modified synthetic garnet material remains substantially the same with changing values of x.7. The modified synthetic garnet material of wherein a density of the modified synthetic garnet material is about 50.8. The modified synthetic garnet material of wherein a dielectric constant of the modified synthetic garnet material is below 25.9. The modified synthetic garnet material of wherein a 4 PiMs of the modified synthetic garnet material decreases with increasing values of x.10. A method of modifying a garnet ...

Power inductor and method of manufacturing the same

A power inductor includes a substrate having a through hole in a central portion thereof; a first internal coil pattern and a second internal coil pattern each having a spiral shape and provided on opposite surfaces of the substrate outwardly of the through hole; a magnetic body enclosing the substrate on which the first internal coil pattern and the second internal coil pattern are provided, end portions of the first internal coil pattern and the second internal coil pattern being exposed to opposite end surfaces thereof; a first external electrode and a second external electrode provided on the opposite end surfaces of the magnetic body to be connected to the end portions of the first internal coil pattern and the second internal coil pattern, respectively; and an anti-plating layer covering the magnetic body between the first external electrode and the second external electrode.

ELECTROMAGNETIC WAVE ATTENUATOR, ELECTRONIC DEVICE, FILM FORMATION APPARATUS, AND FILM FORMATION METHOD

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

MAGNETORESISTIVE EFFECT OSCILLATOR

A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density Jfor oscillation, to a magnetoresistive effect element for a time T, and then executes a second step of applying a current, which has a second current density Jsmaller than the first current density and not smaller than the critical current density Jfor oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time Tin the first step is J, a critical current density for magnetization reversal of the magnetoresistive effect element is J, and a magnetization reversal time of the magnetoresistive effect element is T: 1. Field of the InventionThe present invention relates to a magnetoresistive effect oscillator.2. Description of the Related ArtA magnetoresistive effect oscillator is an oscillator utilizing precession of magnetization in a magnetic layer of a magnetoresistive effect element, the precession being generated upon application of a current to the magnetoresistive effect element. In such an oscillator, a resistance value of the magnetoresistive effect element is changed at a high frequency due to the precession of magnetization in the magnetic layer of the magnetoresistive effect element, thereby causing the magnetoresistive effect element to oscillate. In recent years, studies on the magnetoresistive effect oscillator have been conducted intensively. Japanese Unexamined Patent Application Publication (Translation of PCT Application) No. 2010-519760 discloses an operation method of operating a magnetoresistive effect oscillator at a low current density not higher than the critical current density for oscillation.However, the above proposed operation method has a problem that the oscillation caused in the magnetoresistive effect element takes a ...

Magnetic Shielding Unit For Magnetic Security Transmission, Module Comprising Same, And Portable Device Comprising Same

Disclosed is a magnetic field shielding unit for magnetic security transmission. The magnetic field shielding unit for magnetic security transmission includes a magnetic shielding layer formed of fragments of ferrite containing magnesium oxide (MgO) shredded to improve flexibility of the magnetic field shielding unit. The ferrite containing magnesium oxide has a real part (μ′) of the complex permeability of 650 or more at a frequency of 100 kHz. Accordingly, it is possible to prevent influence of a magnetic field on components of a mobile terminal device or a body of a user who uses the same, and to further increase the characteristics of the combined antennas even if the magnetic field shielding unit is combined with various kinds and purposes of antennas having various structures, shapes, sizes and intrinsic characteristics (inductance, resistivity, etc.).

MAGNETIC FIELD SHIELD SHEET FOR WIRELESS POWER TRANSMISSION AND WIRELESS POWER RECEIVING MODULE COMPRISING SAME

There is provided a magnetic field shielding sheet for wireless power transmission. The present disclosure to provide a magnetic field shielding sheet for wireless power transmission that includes a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method, a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, and a third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet so as to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna. 1. A magnetic field shielding sheet for wireless power transmission comprising;a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method;a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, the second shielding sheet including a receiving portion for receiving a thickness of the first shielding sheet; anda third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna.2. The magnetic field shielding sheet for wireless power transmission of claim 1 , wherein the third shielding sheet is disposed to cover a boundary region of the first shielding sheet and the second shielding sheet.3. The magnetic field shielding sheet for wireless power transmission of claim 1 , wherein the first shielding sheet is a ribbon sheet including at least one of an amorphous alloy and a ...

COATING TREATMENT SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING COATING MATERIAL

A method produces a coating treatment solution to be used for forming a ferrite film having a spinel type crystal structure MFeOon a surface of a soft magnetic material. The coating treatment solution contains a solution having a metal element and Fe. The metal element becomes divalent cations in the solution. The method prepares a first solution containing the metal element M and Fe, prepares a second solution by adding an alkaline solution to the first solution in a non-oxidizing atmosphere. The method produces the coating treatment solution by using the second solution. 1. A method of producing a coating treatment solution comprising a solution containing a metal element M and iron , the metal element becoming divalent cations , the coating treatment solution being used for forming a ferrite film having a spinel type crystal structure MFeOon a surface of a soft magnetic material , comprising steps of:preparing a first solution which contains the metal element M and iron;preparing a second solution by adding an alkaline solution to the first solution in a non-oxidizing atmosphere; andproducing the coating treatment solution by using the second solution.2. The method of producing a coating treatment solution according to claim 1 , whereinthe first solution is prepared in the non-oxidizing atmosphere.3. The method of producing a coating treatment solution according to claim 1 , whereinthe step of preparing the first solution performs one of:a metal salt containing Fe is dissolved into a solution containing a metal salt which contains the metal element M; anda solution containing a metal salt which contains Fe is mixed together with a solution containing a metal salt which contains the metal element M.4. The method of producing a coating treatment solution according to claim 2 , whereinthe step of preparing the first solution performs one of:a metal salt containing Fe is dissolved into a solution containing a metal salt which contains the metal element M; anda ...

PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME

Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (MnGa)Nlayer (0 Подробнее

COIL COMPONENT

Disclosed herein is a coil component that includes an element body made of a first magnetic material, a coil conductor embedded in the element body, and first and second magnetic films made of a second magnetic material having higher permeability than that of the first magnetic material. The element body has an upper surface crossing a coil axis of the coil conductor and first and second side surfaces extending substantially parallel to the coil axis. The first magnetic film is formed on the upper surface and first side surface of the element body, and the second magnetic film is formed on the upper surface and second side surface of the element body. 1. A coil component comprising:an element body made of a first magnetic material;a coil conductor embedded in the element body; andfirst and second magnetic films made of a second magnetic material having higher permeability than that of the first magnetic material,wherein the element body has an upper surface crossing a coil axis of the coil conductor and first and second side surfaces extending substantially parallel to the coil axis, andwherein the first magnetic film is formed on the upper surface and first side surface of the element body, and the second magnetic film is formed on the upper surface and second side surface of the element body.2. The coil component as claimed in claim 1 ,wherein the element body further has a mounting surface opposite to the upper surface, andwherein the first and second magnetic films are further formed on the mounting surface of the element body.3. The coil component as claimed in claim 1 , further comprising a first terminal electrode connected to one end of the coil conductor and a second terminal electrode connected to other end of the coil conductor claim 1 ,wherein the element body further has third and fourth side surfaces extending substantially parallel to the coil axis and crossing at substantially right angles to the first and second side surfaces, andwherein the first ...

Magnetic core

A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150° C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150° C.

CHIP-SCALE RESONANT GYRATOR FOR PASSIVE NON-RECIPROCAL DEVICES

A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port. 1. A method for creating one of a gyrator or a circulator within an integrated circuit , the method comprising:depositing a first metal layer on a semiconductor substrate;etching the first metal layer to form a first electrode having a first lead;depositing a piezoelectric layer on the semiconductor substrate and first electrode;etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator;depositing a second metal layer on the piezoelectric layer;etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port;depositing a magnetostrictive layer on the second electrode;etching the magnetostrictive layer to approximately the shape of the piezoelectric layer;depositing a third metal layer on the magnetostrictive layer; andetching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.2. The method of claim 1 , wherein the etching the ...

PATTERN WRITING OF MAGNETIC ORDER USING ION IRRADIATION OF A MAGNETIC PHASE TRANSITIONAL THIN FILM

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase. 1. An article comprising:a substrate; and wherein the alloy comprises:', 'a continuous antiferromagnetic phase; and', 'one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase., 'a layer of an FeRh alloy disposed on the substrate;'}2. The article of claim 1 , wherein the alloy comprises an array of the discrete phases.3. The article of claim 1 , wherein the discrete phase is ferromagnetic.4. A method comprising:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'providing the article of ; and'}orienting the magnetic polarization of a first ferromagnetic discrete phase.5. The method of claim 4 , further comprising:orienting the magnetic polarization of a second ferromagnetic discrete phase in a direction different from that of the first ferromagnetic discrete phase.6. A method comprising:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'providing the article of ; and'}determining the orientation of the magnetic polarization of the ferromagnetic discrete phase.7. The article of claim 1 , wherein the area of the discrete phase is no more than 1000 μm.8. The article of claim 1 , wherein the area of the discrete phase is no more than 1000 nm.9. The article of claim 1 , wherein the discrete phase has a metamagnetic ...

Giant magnetoresistive effect memory cell

A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Bilayer cmp process to improve surface roughness of magnetic stack in mram technology

A method for manufacturing a magnetoresistive random access memory (MRAM) cell is disclosed, which alleviates the problem of Neel coupling caused by roughness in the interface between the tunnel junction layer and the magnetic layers. The method comprises depositing first (113) and second (114) barrier layers on the conductor (112), wherein the first barrier layer (113) has a polish rate different from that of the second barrier layer (114). The second barrier layer (114) is then essentially removed by chemical mechanical polishing (CMP), leaving a very smooth and uniform first barrier layer (113). When the magnetic stack (115) is then formed on the polished first barrier layer (113), interfacial roughness is not translated to the tunnel junction layer, and no corruption of magnetization is experienced.

Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology

A method for manufacturing a magnetoresistive random access memory (MRAM) cell is disclosed, which alleviates the problem of Neel coupling caused by roughness in the interface between the tunnel junction layer and the magnetic layers. The method includes depositing first and second barrier layers on the conductor, wherein the first barrier layer has a polish rate different from that of the second barrier layer. The second barrier layer is then essentially removed by chemical mechanical polishing (CMP), leaving a very smooth and uniform first barrier layer. When the magnetic stack is then formed on the polished first barrier layer, interfacial roughness is not translated to the tunnel junction layer, and no corruption of magnetization is experienced.

Fully Integrated Tuneable Spin Torque Device For Generating An Oscillating Signal And Method For Tuning Such Apparatus

The present invention is related to a a device and corresponding methods for generating an oscillating signal. The device comprises a means for providing a current of spin polarised charge carriers, a magnetic, e.g. ferromagnetic, excitable layer adapted for receiving the generated current of spin polarised charge carriers thus generating an oscillating signal with a frequency and an integrated means for interacting with said magnetic, e.g. ferromagnetic, excitable layer such that a selection of said oscillation frequency is achieved. No external field needs to be applied to select or tune the frequency. Different types of integrated means can be used, such as e.g. means inducing mechanical stress in the magnetic, e.g. ferromagnetic, excitable layer, means inducing exchange bias interactions and means inducing magnetostatic interactions.

Method of producing NiFe alloy films having magnetic anisotropy and magnetic storage media including such films

A method of fabricating anisotropic magnetic films includes providing a substrate, sputtering a layer of Ni x Fe y (where x ranges from 40 to 50 and y=(100-x)) onto a surface of the substrate, and subjecting the layer of Ni x Fe y to a rotating magnetic field during the sputtering deposition process. A magnetic storage medium comprising a substrate, a soft magnetic underlayer supported by the substrate, the soft magnetic underlayer including Ni x Fe y (where x ranges from 40 to 50 and y=(100-x)) and having an easy axis in a circumferential direction and a hard axis in a radial direction, and a magnetically hard recording layer supported by the soft magnetic underlayer, is also included.

Soft magnetic alloy and plane magnetic element

A soft magnetic alloy film includes: a fine crystalline phase having an average grain size of 10 nm or less and essentially consisting of Fe of b-c-c structure; and an amorphous phase containing a rare earth element or at least one of the elements, Ti, Zr, Hf, V, Nb, Ta and W, and O (oxygen) in a large amount, the fine crystalline phase and amorphous phase existing in a mixed state, with the proportion of the fine crystalline phase of Fe of b-c-c structure to the entire structure being 50% or less. A plane magnetic element employs such a soft magnetic alloy.

Giant magnetoresistive effect memory cell

A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures can be fabricated with further alternating intermediate separating, material layers and varied thickness ferromagnetic thin-film layers, and a configuration thereof can be provided for use as an isolated memory cell.

Giant magnetoresistive effect memory cell

A digital data memory having a bit structure in a memory cell based on an intermediate separating material (14) with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film (12, 13, 13; 12) of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures (20) can be fabricated with further alternating intermediate separating material layers (15, 16) and varied thickness ferromagnetic thin-film layers (12, 13; 13; '12) and a configuration thereof can be provided for use as an isolated memory cell.

Giant magnetoresistive effect memory cell

A digital data memory having a bit structure in a memory cell based on an intermediate separating material (14) with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film (12, 13, 13; 12) of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures (20) can be fabricated with further alternating intermediate separating material layers (15, 16) and varied thickness ferromagnetic thin-film layers (12, 13; 13; '12) and a configuration thereof can be provided for use as an isolated memory cell.

Spin dependent tunneling memory

A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Spin dependent tunneling memory

A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Spin dependent tunneling memory

A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Spin dependent tunneling memory

Giant magnetoresistive effect memory cell

A digital data memory having a bit structure in a memory cell based on an intermediate separating material (14) with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film (12, 13, 13; 12) of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures (20) can be fabricated with further alternating intermediate separating material layers (15, 16) and varied thickness ferromagnetic thin-film layers (12, 13; 13; '12) and a configuration thereof can be provided for use as an isolated memory cell.

積層型永久磁石

　大きい反磁場が重畳された強い減磁場による合金磁性層の磁化反転を持ちこたえさせて、大きい表面磁束密度を発生させることが可能な積層型永久磁石とその製造方法を提供すると共に、このような積層型永久磁石を回転子或いは固定子としてモータに搭載することにより小型化を図ったモータを提供する。Dy、Tbのうち少なくとも１種の金属からなる希土類金属層と、(Nd,R)FeB層（RはDy、Tbのうち少なくとも１種の希土類金属）と、正方晶Nd2Fe14Bを含む合金磁性層と、(Nd,R)FeB層（RはDy、Tbのうち少なくとも１種の希土類金属）とを繰り返し積層して、積層型永久磁石を形成することにより、合金磁性層の面内方向よりも、合金磁性層の面に垂直な方向の残留磁束密度及び保磁力を大きくする。

Thin film magnetic field sensor

A magnetic field effect sensor system having giant magneto-impedance elements. The elements may be elongated strips, and in proximity to and parallel with one another, and connected in series with connections or electrodes. The elements may have a regular shape without turns. They may have a single- or multi-layer structure. Some of the layers in the elements may contain a soft magnetic material, for instance, which form a closed loop for magnetic flux around a non-magnetic conductor.

Garnet film for magnetic bubble

적층형 전자부품 및 그 제조방법

본 발명은 적층형 전자부품 및 그 제조방법에 관한 것으로, 보다 상세하게는 이종 재료의 별도의 비자성체 층을 삽입하지 않으면서도 고전류에서 전류 인가에 따른 인덕턴스 값의 변화 특성을 개선할 수 있고, 이종 재료의 별도의 비자성체 층을 삽입하지 않으므로 이종 재료 간의 수축률 차이를 조절할 필요가 없으며, 제조 공정이 간편화될 수 있는 적층형 전자부품 및 그 제조방법에 관한 것이다.

Magnetic thin film and recording head

Magnetoresistive effect oscillator

层叠电感器

本发明提供一种层叠电感器，层叠以Ni-Zn-Cu类铁氧体为主要成分的多个第一绝缘体层和以Ag为主要成分多个导电体层，在层叠体的内部设置螺旋状线圈，螺旋状线圈是多个导电体层和通孔导体相互连接而成的，以横穿螺旋状线圈的内侧磁路的方式配置矩形的第二绝缘体层，第二绝缘体层以具有比第一绝缘体层的导磁率低的导磁率的Zn类铁氧体为主要成分，并且，第二绝缘体层的主面边缘部和导电体层在层叠方向上重叠，在该重叠的部分，第二绝缘体层和导电体层接触。因此，在层叠体的内部与导电体层接触的、磁通量密度最容易变高的部分的磁通量不可避免地通过第二绝缘体层，从而能够无差异地改善电流直流叠加特性。

Body with magnetic film attached and manufacturing method therefor

자성막을 기체(基體)에 부착하여 이루어진 자성막 부착체의 제조 방법을 제공한다. 이 제조 방법은, 기체를 준비하는 공정과, 교대로 적층된 유기물막 및 페라이트막으로 이루어진 자성막을 기체 위에 형성하는 공정을 구비한다. 이 제조 방법에 있어서, 자성막을 형성하는 공정은, 20㎛ 이하의 막 두께를 가지는 페라이트막을 페라이트 도금법에 의해 형성하는 공정과, 0.1㎛ 이상 20㎛ 이하의 막 두께를 가지는 유기물막으로서, 상기 유기물막의 막 두께(t)와 영률(E)의 비(t/E)가 0.025㎛/GPa 이상인 유기물막을 형성하는 공정을 교대로 행하는 것이다. There is provided a method of manufacturing a magnetic film adherend comprising a magnetic film adhered to a substrate. This manufacturing method includes a step of preparing a gas and a step of forming a magnetic film composed of an alternately stacked organic film and a ferrite film on a substrate. In this manufacturing method, the step of forming a magnetic film is a step of forming a ferrite film having a film thickness of 20 mu m or less by a ferrite plating method, and an organic film having a film thickness of 0.1 mu m or more and 20 mu m or less, (T / E) of the film thickness (t) and the Young's modulus (E) is 0.025 탆 / GPa or more.

Feeding device of sensitive film

(57)【要約】 （修正有） 【課題】 加工中のエピタキシャル膜のクラック発生が 低減され、磁気光学素子用チップ歩留りが向上する酸化 物ガーネット膜を提供する。 【解決手段】 液相エピタキシャル法によって融液中で 酸化物ガーネット基板の両面に酸化物ガーネット膜を成 長させる方法において、該酸化物ガーネット基板の方位 を、結晶の破壊が生じやすい {110}、{112} 、{123} の ±５°以内とすることを特徴とする酸化物ガーネット膜 の製造方法。

Ferrite sheet complex and method for fabricating the same

본 발명은 페라이트 시트 복합체 및 그 제조 방법을 공개한다. 상기 페라이트 시트 복합체 제조 방법은 페라이트 시트 양 면 각각에 보호 시트 또는 양면 접착용 시트를 선택적으로 부착하여 페라이트 시트 복합체를 제조하는 단계 및 상기 페라이트 시트 복합체에 표면에 복수의 돌기가 형성된 롤러를 회전시키면서 압력을 가하여 상기 페라이트 시트 복합체 내의 페라이트 시트를 복수의 조각으로 파단하는 단계를 포함한다. 상기 페라이트 시트 복합체 제조 방법은 요철이 있는 전자 기기의 표면에 균일하게 밀착되어 부착될 수 있는 페라이트 시트 복합체를 제조할 수 있다.

Near-field-noise-suppressing sheet

Magnetic sheet, method of making the same and loud speaker comprising the same

헥사페라이트(hexaferrite)를 포함하는 자성체 입자, 및 2 이상의 나노 파이버(nanofiber)로 이루어진 나노 파이버 기재(nano fiber matrix)를 포함하는 자성 시트로서, 자성체 입자는 나노 파이버 기재에 분산되어 있는 자성 시트, 및 그 제조 방법과, 자성 시트를 포함하는 스피커가 제공된다. A magnetic sheet comprising magnetic particles including hexaferrite, and a nano fiber matrix made of two or more nanofibers, wherein the magnetic particles are dispersed in the nanofiber substrate, and A method for manufacturing the same, and a speaker including a magnetic sheet are provided.

Bilayer cmp process to improve surface roughness of magnetic stack in mram technology

자기저항성 랜덤 액세스 메모리(MRAM) 셀을 제조하는 방법이 개시되며, 이는 터널 접합 층과 자기층들간의 계면의 비평탄성으로 인한 닐 커플링의 문제를 완화시킨다. 상기 방법은, 도전체(112)상에 제 1 배리어 층(113) 및 제 2 배리어 층(114)을 증착시키는 방법을 포함하여 이루어지며, 상기 제 1 배리어 층(113)은 상기 제 2 배리어 층(114)과 상이한 폴리싱 속도를 가진다. 그 후, 제 2 배리어 층(114)은 화학적 기계적 폴리싱(CMP)에 의해 본질적으로 제거되며, 평활하고 균일한 제 1 배리어 층(113)이 남겨진다. 그 후, 자기 스택(115)이 폴리싱된 제 1 배리어 층(113)상에 형성되는 경우, 계면 비평탄성이 터널 접합층에 대해 병진되지 않으며, 자화의 손상을 겪지 않는다. A method of fabricating a magnetoresistive random access memory (MRAM) cell is disclosed, which alleviates the problem of neil coupling due to the nonplanarity of the interface between the tunnel junction layer and the magnetic layers. The method comprises a method of depositing a first barrier layer 113 and a second barrier layer 114 on a conductor 112, wherein the first barrier layer 113 is the second barrier layer. Have a polishing rate different from 114. Thereafter, the second barrier layer 114 is essentially removed by chemical mechanical polishing (CMP), leaving the first barrier layer 113 smooth and uniform. Then, when the magnetic stack 115 is formed on the polished first barrier layer 113, the interfacial non-flatness is not translated relative to the tunnel junction layer and does not suffer from damage of magnetization.

The thin coating method for epitaxial ba-ferrite

PURPOSE: A manufacturing method of epitaxial barium-ferrite thin film is provided, which can produce epitaxial barium-ferrite thin film having excellent crystal orientation by using laser ablation process. The method is characterized by using pure oxygen of more than 99.99% for preventing any influent of impurities to the thin film, adjusting oxygen partial pressure to 500-900mTorr for preventing other crystal from forming and adjusting the energy density of KrF excimer laser to 4.4-6.6J per square cm for shortening the thin film formation time. CONSTITUTION: The manufacturing method is as follows: (i) heat the substrate of single crystal (001)Al2O3 or (012)Al2O3 set in the vacuum reaction room to 700 deg.C; (ii) adjust the oxygen pressure to 500-900mTorr by feeding oxygen of high purity of more than 99.99%; (iii) adjust the energy density of KrF excimer laser to 4.4-6.67J per square cm by rotating BaFe12O19 target and the Al2O3 substrate, irradiate to the BaFe12O19 target to ablate particle from the target and vapor deposit thin film of 0.4-1.5Å/s of BaFe12O19 on the Al2O3 substrate; and (iv) cool the vapor deposited Al2O3 substrate by a rate of 3-5 deg.C per min.

Magneto-optical element material

Y-type hexagonal ferrite thin film and manufacturing method thereof

A kind of preparation method of garnet Magneto-optic Thin Film Material

本发明公开了一种石榴石磁光薄膜材料的制备方法，属于磁光材料制备技术领域。本发明将聚二烯丙基二甲基氯化铵溶液与羧甲基纤维素钠溶液等混合水浴加热，加入聚乙烯亚胺溶液等搅拌，经干燥碾磨制得聚电解质粉末，与乙酸钙等水浴加热，经过滤、保温矿化、球磨过筛后，与丙酮混合超声分散得混合分散液，再取硝酸溶液、硝酸铁等混合制得混合液，滴加氨水，并静置、过滤、干燥后，与混合分散液混合，经超声分散、水浴加热、浓缩制得镀膜基液，滴加至玻璃片表面进行旋转镀膜，再干燥制得石榴石磁光薄膜材料。本发明制备步骤简单，制备过程中颗粒分散均匀，所得石榴石薄膜具有极好的致密性。

The method of obtaining monovinylacetylene

Composite-typed thin film magnetic head and method for manufacturing the same

상부 코어층 (10) 및 하부 코어층 (7) 이 Fe-M-O 합금, Fe-M-T-O 합금, 또는 Ni-Fe-X 합금으로 형성됨으로써, 상부 코어층 (10) 이 고포화 자속밀도, 저보자력 및 고비저항의 성질을 가지며, 또 하부 코어층 (7) 이 상부 코어층 (7) 보다도 낮은 포화자속밀도, 저보자력, 고비저항 및 저자왜정수의 성질을 갖게 된다. 또, 하부 코어층 (시일드층 ; 8) 은 측단부를 향함에 따라 서서히 얇아지도록 형성되어 있기 때문에, 하부 코어층 (8) 상에 형성되는 갭층 (9) 의 막두께를 균일하게 형성할 수 있다. 또, 스퍼터에 의해 하부 코어층 (8) 을 형성하고 있기 때문에, 연자성 특성이 우수한 재료를 사용할 수 있어, 높은 주파수에서의 기록이 가능해진다.

Magnetostatic wave device

(57)【要約】 【課題】 膜厚が薄い置換型Ｒ，Ａ：ＹＩＧを用いても 動作し、より動作周波数帯域が広い静磁波デバイスを提 供する。 【解決手段】 磁性ガーネット膜によって構成される静 磁波デバイスである。この磁性ガーネット膜の材料は、 一般式（Ｙ 1-r Ｒ r ） 3 （Ｆｅ 1-a Ａ a ） 5 Ｏ 12 （ただ し、ＲはＬａ，Ｂｉ，Ｇｄ，Ｌｕから選ばれる少なくと も一種であり、ＡはＡｌ，Ｇａ，Ｉｎ，Ｓｃから選ばれ る少なくとも一種であり、ｒおよびａは、それぞれ、０ ≦ｒ≦１、０≦ａ＜１の範囲内にあり、ｒおよびａは同 時には０にならない。）で表される。また、この磁性ガ ーネット膜について、Ｘ線回折法でロッキングカーブ測 定を行ったとき、主格子点を０次とする一連のサテライ ト反射が存在する。

MIDDLE INTERFERENCE SHEET

1. Лист для подавления помех в ближней зоне, содержащий пару пленок из пластмассы, каждая из которых имеет на одной поверхности тонкую металлическую пленку, которые склеены электропроводящим клеем тонкими металлическими пленками внутрь, при этом каждая тонкая металлическая пленка выполнена из магнитного металла и имеет толщину, отрегулированную так, что пара склеенных тонких металлических пленок имеет поверхностное сопротивление 20-150 Ом на квадрат.2. Лист по п.1, в котором упомянутый магнитный металл представляет собой Ni, Fe, Co или их сплав.3. Лист по п.1, в котором упомянутая тонкая металлическая пленка выполнена из Ni.4. Лист по п.1, в котором обе тонких металлических пленки имеют толщину в пределах 10-30 мм.5. Лист по п.1, в котором пара склеенных тонких металлических пленок имеет поверхностное сопротивление 30-80 Ом на квадрат.6. Лист по любому из пп.1-5, в котором упомянутая тонкая металлическая пленка получена способом вакуумного осаждения из паровой фазы. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК H05K 9/00 (13) 2013 143 290 A (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2013143290/07, 14.11.2011 (71) Заявитель(и): КАГАВА Сейдзи (JP) Приоритет(ы): (30) Конвенционный приоритет: (72) Автор(ы): КАГАВА Сейдзи (JP) 25.02.2011 JP 2011-040977 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 25.09.2013 R U (43) Дата публикации заявки: 27.03.2015 Бюл. № 9 (86) Заявка PCT: (87) Публикация заявки PCT: WO 2012/114587 (30.08.2012) R U (54) ЛИСТ ДЛЯ ПОДАВЛЕНИЯ ПОМЕХ В БЛИЖНЕЙ ЗОНЕ (57) Формула изобретения 1. Лист для подавления помех в ближней зоне, содержащий пару пленок из пластмассы, каждая из которых имеет на одной поверхности тонкую металлическую пленку, которые склеены электропроводящим клеем тонкими металлическими пленками внутрь, при этом каждая тонкая металлическая пленка выполнена из магнитного металла и имеет толщину, отрегулированную так, что пара склеенных тонких металлических ...

Patent JPS5219680B2

Semi-Hard Magnetic Material, Method of Producing Same, and Magnetic Marker Using Same

본 발명은 높은 각형성 및 우수한 자화 급구배성을 갖는 반경질 자성 재료 및 적합한 자기 마커 바이아스 재료의 제조방법에 관한 것으로서, 상기 방법은 Fe를 주성분으로 하는 A층과 Cu족 비자성 금속을 주성분으로 하는 B층을 확산-연결함으로써 형성되는 다층체를 가열하는 단계, 상기 B층을 분단화 하는 단계, 그리고 냉간 소성하는 단계를 포함하고, 이에 의해 높은 각형성 및 우수한 자화 급구배성을 갖는 반경질 자성 재료 및 자기 마커 재료가 제조된다. The present invention relates to a method for producing a semi-magnetic magnetic material and a suitable magnetic marker bias material having a high angular shape and excellent magnetization steep gradients, the method comprising a layer A and Fe-based non-magnetic metal mainly composed of Fe Heating the multilayer body formed by diffusion-connecting the layer B, segmenting the layer B, and cold firing, thereby providing a semi-magnetic material having high angularity and excellent magnetization steepness. Materials and magnetic marker materials are prepared.

Soft magnetic thin film

내용없음

Shielding unit for magnetic security transmission, module comprising the same and mobile device comprising the same

마그네틱 보안전송용 자기장 차폐유닛이 제공된다. 본 발명의 일 실시예에 따른 마그네틱 보안전송용 자기장 차폐유닛은 차폐유닛의 가요성을 향상시키기 위하여 파쇄시킨 산화마그네슘(MgO)을 포함하는 페라이트의 파편들로 형성된 자기장 차폐층;을 구비하고, 상기 산화마그네슘을 포함하는 페라이트는 100㎑의 주파수에서 상대 복소투자율의 실수부(μ')가 650 이상이다. 이에 의하면, 휴대 단말기기 등의 부품이나 이를 사용하는 사용자의 인체에 미치는 자기장 영향을 차단함과 동시에 다양한 구조, 형상, 크기 및 고유특성(인덕턴스, 비저항 등)을 가지는 여러 종류 및 다양한 용도의 안테나들과 조합되더라도 조합되는 안테나의 특성을 보다 현저히 증가시킬 수 있다. A magnetic shielding unit for magnetic security transmission is provided. The magnetic shielding unit for magnetic security transmission according to an embodiment of the present invention includes a magnetic shielding layer formed of fragments of ferrite including magnesium oxide (MgO), which is crushed to improve the flexibility of the shielding unit. The ferrite containing magnesium oxide has a real part (μ ') of relative complex permeability of 650 or more at a frequency of 100 kHz. Accordingly, it is possible to prevent influence of a magnetic field on a human body of a portable terminal device or a user who uses the portable terminal device, and to provide various types of antennas having various structures, shapes, sizes, and intrinsic characteristics (inductance, resistivity, It is possible to remarkably increase the characteristics of the combined antenna.

Antenna core

The aim of the invention is to create a highly bendable antenna core (8) which is highly bendable for high-frequency identification systems and which substantially retains its soft-magnetic properties when bending occurs. Said aim is achieved, according to the invention, by using specific amorphous or nanocrystalline alloys having a very low magnetostriction value. The antenna core (8) is embodied in the form of a laminate with/or without insulating layers placed therebetween. The invention also relates to an antenna provided with one such antenna core and to a method for the production thereof.

Stiffness providing module using magneto-rheological fluid, haptic providing device therewith and stiffness providing method therewith

본 발명은 자기유변유체를 이용한 강성제공모듈과 강성제공방법에 관한 것으로서, 보다 상세하게는 내부에 홀이 형성된 복수개의 자기유닛을 동심원형태로 배열하고, 각각의 자기유닛이 독립적으로 하부이동할 수 있도록 구성하여 사용자에게 다양한 강성을 제공하는 강성제공모듈 및 이를 이용한 강성제공방법에 관한 것이다. 이를 위해, 중심에 홀이 형성된 케이스부;와 케이스부의 내부에 포함되어 자기유변유체로 자기장을 발생시키는 자기장발생부;를 포함하는 자기유닛이 n(n: 2이상의 자연수)개 구비되고, n개의 자기유닛들은 반경이 서로 달라 n-1번째 자기유닛의 직경은 n번째 자기유닛의 홀보다 작아서 n-1번째 자기유닛은 n번째 자기유닛의 홀에 수납되며, 자기유닛 사이에는 자기유변유체가 구비됨으로써, 자기장에 따른 자기유닛 사이의 전단력 변화에 기초하여 강성을 제공하는 것을 특징으로 하는 자기유변유체를 이용한 강성제공모듈과 강성제공방법을 제공한다. The present invention relates to a rigidity providing module and a method for providing rigidity using a magnetorheological fluid, and more particularly, to arrange a plurality of magnetic units having holes therein in a concentric shape, and to allow each magnetic unit to independently move downward. The present invention relates to a stiffness providing module that provides various stiffnesses to users and a stiffness providing method using the same. To this end, n (n: natural numbers of 2 or more) magnetic units including a case portion having a hole formed in the center; and a magnetic field generating portion included in the case portion to generate a magnetic field with a magnetorheological fluid are provided. The magnetic units have different radii, and the diameter of the n-1 th magnetic unit is smaller than that of the n th magnetic unit, so that the n-1 th magnetic unit is accommodated in the n th magnetic unit's hole, and a magnetorheological fluid is provided between the magnetic units. By providing a stiffness providing module and a stiffness providing method using a magnetorheological fluid, the stiffness is provided based on a change in shear force between magnetic units according to a magnetic field. 자기유변유체, 코일, 전단력, 강성 Magnetorheological fluid, coil, shear force, rigidity

Yig thin film microwave device

내용 없음. No content.

Magnetic thin film and magnetic head using the same

본 발명은 고주파대역에서도 뛰어난 자기특성을 보이는 결정질계의 자성체 박막 및 그것을 사용한 자기헤드에 관한 것으로, 자성결정입자를 모상(母相, parent phase)으로 하는 자성체 박막에 있어서, 제1방향을 따르는 자성결정입자의 평균결정사이즈가 제1방향과 직교하는 제2방향을 따르는 자성결정입자의 평균결정사이즈보다 작은 영역을 포함하고, 제1방향을 따르는 자화를 제2방향을 따르는 자화보다 작은 외부 자계에 의해 실시할 수 있는 자성체 박막으로 한다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystalline magnetic thin film exhibiting excellent magnetic properties even in a high frequency band, and a magnetic head using the same. The present invention relates to a magnetic thin film in which a magnetic crystal grain is a parent phase. An average crystal size of the crystal grains is smaller than the average crystal size of the magnetic crystal grains along the second direction orthogonal to the first direction, and the magnetization along the first direction is applied to an external magnetic field smaller than the magnetization along the second direction. It is set as a magnetic thin film which can be implemented.

Low-loss power ferrite and manufacturing method thereof

多相铁氧体组合物包含：由MnZn铁氧体基体组成的主相；和0.01重量百分比至10重量百分比微米级夹杂物颗粒，所述微米级夹杂物颗粒包括正铁氧体RFeO3(其中R为稀土离子)、钇铁石榴石(YIG)、或其组合，其中微米级夹杂物颗粒的平均颗粒尺寸(D50)为0.1微米至5微米，以及其中微米级夹杂物颗粒的D50小于MnZn铁氧体颗粒的平均颗粒尺寸(D50)；以及任选的0.01重量百分比至5重量百分比添加剂；其中重量百分比基于多相铁氧体组合物的总重量。还公开了制造多相铁氧体组合物的方法。

Magnetic field shielding sheet for wireless power transmission and wireless power receiving module including the same

本发明提供一种无线电力传输用磁场屏蔽片以及包括其的无线电力接收模块。根据本发明示例性实施例的无线电力传输用磁场屏蔽片包括：第一薄片，其屏蔽从以磁感应方式运转的第一无线电力传输用天线产生的磁场；第二薄片，其具备用于收容上述第一薄片的厚度的收容部，且屏蔽从以磁共振方式运转的第二无线电力传输用天线产生的磁场；以及第三薄片，其以同时覆盖上述第一薄片以及第二薄片的方式层压在上述第一薄片和第二薄片的同一面上，以屏蔽从上述第二无线电力传输用天线产生的磁场。

Perpendicular magnetic film, perpendicular magnetic film structure, magnetoresistive element and perpendicular magnetic recording medium

A kind of spinel-type Co1-xMnxFe2O4Ferromagnetic thin film and preparation method thereof

本发明提供了一种尖晶石型Co 1‑x Mn x Fe 2 O 4 铁磁性薄膜及其制备方法，包括以下步骤：将硝酸钴、醋酸锰和硝酸铁按摩尔比为1‑x:x:2(x＝0.1～0.5)溶于乙二醇甲醚和醋酸酐中，搅拌得到Co 1‑x Mn x Fe 2 O 4 前驱液，用旋涂法和逐层退火的工艺在基片上制备出致密度高晶粒尺寸均匀的沿(311)晶面择优取向生长的尖晶石型Co 1‑ x Mn x Fe 2 O 4 铁磁性薄膜。本发明采用溶胶凝胶工艺，设备要求简单，实验条件容易达到，适宜大面积成膜，且化学组分精确可控，并且可通过Mn元素掺杂量对Co 1‑x Mn x Fe 2 O 4 铁磁性薄膜的铁磁性能进行调控。

Preparation method and application of ferroferric oxide single-layer nano film

一种四氧化三铁单层纳米膜的制备方法及其应用，属于纳米材料自组装和离子通道研究领域。本发明首先以油酸铁为前聚体，油酸为配体，合成油相四氧化三铁纳米颗粒；然后通过二乙二醇高温转相，获得表面为聚丙烯酸的水溶性四氧化三铁纳米颗粒；将获得的水相四氧化三铁纳米颗粒在液‑液界面进行自组装获得有序的四氧化三铁单层纳米薄膜。采用四氧化三铁单层纳米膜制备四氧化三铁纳米通道，通过线性扫描方法，测试其电流‑电压曲线；其电化学测试时具备离子选择性。本发明提供了精准可控的二维四氧化三铁材料的制备方法，也表明了四氧化三铁纳米薄膜在离子通道研究领域的巨大的应用潜力，为磁响应纳米通道的研究提供了新的思路。

Magnetostatic wave device and material for the same

A kind of vertical orientated ferromagnetism dielectric film and preparation method thereof

本发明涉及一种强磁性介质薄膜，具体涉及一种垂直取向强磁性介质薄膜及其制备方法。本发明的技术方案如下：一种垂直取向强磁性介质薄膜，包括依次层叠的衬底、缓冲层、垂直取向强磁性介质层和保护层，所述衬底为单晶、多晶或非晶基片，所述缓冲层材质为具有六方晶体结构的无机非金属氮化物陶瓷，所述垂直取向强磁性介质层为钐钴薄膜、铝镍钴薄膜、鉄铂薄膜、铁钯薄膜、钴铂薄膜和/或钴钯薄膜，所述保护层为过渡金属、氮化物膜体材料或氧化物膜体材料。本发明提供的垂直取向强磁性介质薄膜及其制备方法，具有体积小、垂直磁化方向、作为存储单元的晶粒尺寸小、矫顽力大、稳定性高等优点，制备工艺简单，应用领域更广。

Garnet film for magnetic bubble element

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Patent JPH0570290B2

Magnetoresistive effect element

该磁阻效应元件中，具有第一铁磁性金属层、第二铁磁性金属层、和被所述第一及第二铁磁性金属层夹持的隧道势垒层，具有被所述第一及第二铁磁性金属层夹持的隧道势垒层，所述隧道势垒层由组成式AB 2 O x (0＜x≦4)表示，并且是阳离子排列不规则的尖晶石结构，所述隧道势垒层具有与所述第一铁磁性金属层和所述第二铁磁性金属层两者晶格匹配的晶格匹配部、和与所述第一铁磁性金属层和所述第二铁磁性金属层的至少一者晶格不匹配的晶格不匹配部，A位点为多个非磁性元素的二价阳离子，B位点为铝离子，所述组成式中，二价阳离子的元素数低于铝离子的元素数的一半。

METHOD FOR TRANSFERRING FILMS

Patent FR2389968B1

Patent FR2389968A1

a. Structure magnétique créant un champ de polarisation pour des éléments de mémoire à bulle magnétique b. Structure caractérisée en ce qu'elle se compose d'une couche de ferrite dure formée de particules de ferrite dure et d'une couche de ferrite douce formée de particules de ferrite douce, ces deux couches étant réunies par frittage pour former une liaison entre elles et donner une structure stratifiée. at. Magnetic structure creating a bias field for magnetic bubble memory elements b. Structure characterized in that it consists of a hard ferrite layer formed of hard ferrite particles and a soft ferrite layer formed of soft ferrite particles, these two layers being joined by sintering to form a bond between them and give a layered structure.