ELECTRON EMISSION ELEMENT, ELECTRON EMISSION DEVICE, CHARGE DEVICE, IMAGE FORMING DEVICE, ELECTRON RADIATION CURING DEVICE, LIGHT-EMITTING DEVICE, IMAGE DISPLAY DEVICE, BLOWER DEVICE, COOLING DEVICE, AND MANUFACTURING METHOD FOR ELECTRON EMISSION ELEMENT

An electron emission element () includes an electrode substrate () and a thin film electrode (), and emits electrons from the thin film electrode () by voltage application across the electrode substrate () and the thin film electrode (). An electron accelerating layer () containing at least insulating fine particles () is provided between the electrode substrate () and the thin film electrode (). The electrode substrate () has a convexoconcave surface. The thin film electrode () has openings () above convex parts of the electrode substrate (). 1. An electron emission element , comprising:an electrode substrate;a thin film electrode; andan electron accelerating layer between the electrode substrate and the thin film electrode, the electron accelerating layer containing at least insulating fine particles,the electron emission element emitting, from the thin film electrode, electrons which are accelerated between the electrode substrate and the thin film electrode by voltage application across the electrode substrate and the thin film electrode,the electrode substrate having a convexoconcave surface on which the electron accelerating layer is provided, andthe thin film electrode having openings above convex parts of the convexoconcave surface of the electrode substrate.2. The electron emission element as set forth in claim 1 , wherein the insulating fine particles are (i) monodisperse insulating fine particles and (ii) aligned in the electron accelerating layer so as to fill the electron accelerating layer.3. The electron emission element as set forth in claim 1 , wherein the insulating fine particles contain at least one of silicon oxide claim 1 , aluminum oxide claim 1 , and titanium oxide.4. The electron emission element as set forth in claim 1 , wherein the insulating fine particles have an average diameter of 5 nm through 1000 nm.5. The electron emission element as set forth in claim 1 , wherein the electron accelerating layer has a thickness of 8 nm through 3000 ...

NANOWIRES, METHOD OF FABRICATION THE SAME AND USES THEREOF

A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid and the liquid composition to a temperature selected such that the nanostructures are segregated from the surfactant and assemble into a nanowire structure on the surface. 1. A nanowire structure , comprising a pattern of linear sub-structures interconnected thereamongst to form an elongated solid structure , each linear sub-structure being formed of a plurality of nanoparticles;wherein an average diameter of said sub-structures is less than 50 nanometers and an average diameter of said elongated solid structure is at least five times said average diameter of said sub-structures but less than 1 micrometer.2. The nanowire structure according to claim 1 , being carried by a liquid surface.3. The nanowire structure according to claim 1 , wherein an average density of said nanoparticles is at least 4 nanoparticles per 100 square nanometers.4. The nanowire structure according to claim 1 , wherein said nanoparticles are made of a metal.5. The nanowire structure according to claim 4 , wherein said metal is gold.6. The nanowire structure according to claim 1 , wherein said nanoparticles are made of a semiconductor material.7. The nanowire structure according to claim 1 , wherein said nanoparticles are made of a dielectric material.8. The nanowire structure according to claim 1 , wherein said nanoparticles are made of a ferromagnetic material.9. The nanowire structure according to claim 1 , being producible by a method claim 1 , the method comprising:applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures, each nanostructure having a core enclosed by a hydrophobic shell; andheating at least one of said carrier ...

LATERAL FIELD EMISSION DEVICE

Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials. 1. A lateral field emission device comprising:a substrate;electron emission materials arranged in a direction with respect to the substrate;a supporting portion disposed on the substrate, the supporting portion supporting the electron emission materials;a cathode disposed on the substrate, the cathode being electrically connected to the electron emission materials; andan anode disposed on the substrate, the anode being opposite to the cathode.2. The lateral field emission device of claim 1 , further comprising a gate disposed between the cathode and the anode.3. The lateral field emission device of claim 2 , wherein the gate is disposed under an electron transport pathway between the electron emission materials and the anode.4. The lateral field emission device of claim 2 , wherein the gate includes gate members disposed at both sides of an electron transport pathway between the electron emission materials and the anode.5. The lateral field emission device of claim 1 , wherein the anode includes a side face at which electrons from the electron emission materials collide.6. The lateral field emission device of claim 5 , wherein the electron emission materials include at least one of a carbon nano tube claim 5 , a nano carbon material claim 5 , a semiconductor nanowire claim 5 , metal nanowire claim 5 , a carbon nanoplate claim 5 , a graphene claim 5 , and a graphene oxide.7. The lateral field emission device of claim 1 , wherein the electron emission materials include at least one of a carbon nano tube claim 1 , a nano carbon material claim 1 , a semiconductor nanowire claim 1 , a metal nanowire claim 1 , a ...

ELECTRON EMISSION ELEMENT AND METHOD FOR SAME

An electron emitting device () includes a first electrode (), a second electrode (), and a semi-conductive layer () provided between the first electrode () and the second electrode (). The semi-conductive layer () includes a porous alumina layer () having a plurality of pores () and silver () supported in the plurality of pores () of the porous alumina layer (). 1. An electron emitting device comprising a first electrode , a second electrode , and a semi-conductive layer provided between the first electrode and the second electrode , whereinthe semi-conductive layer includes a porous alumina layer having a plurality of pores and silver supported in the plurality of pores of the porous alumina layer.2. The electron emitting device of claim 1 , wherein the first electrode is formed of an aluminum substrate or an aluminum layer claim 1 , and the porous alumina layer is an anodized layer formed at a surface of the aluminum substrate or at a surface of the aluminum layer.3. The electron emitting device of claim 1 , wherein the first electrode is formed of an aluminum substrate containing aluminum in an amount of not less than 99.00 mass % but less than 99.99 mass % claim 1 , and the porous alumina layer is an anodized layer formed at a surface of the aluminum substrate.4. The electron emitting device of claim 3 , wherein aluminum is contained in an amount of 99.98 mass % or less in the aluminum substrate.5. The electron emitting device of claim 1 , wherein the porous alumina layer has a thickness which is not less than 10 nm and not more than 5 μm.6. The electron emitting device of claim 1 , wherein the plurality of pores have an opening having a two-dimensional size which is not less than 50 nm and not more than 3 μm as viewed from a normal direction of a surface thereof.7. The electron emitting device of claim 1 , wherein the plurality of pores of the porous alumina layer have a depth which is not less than 10 nm and not more than 5 μm.8. The electron emitting device ...

ELECTRON EMISSION ELEMENT, ELECTRIFICATION APPARATUS, AND IMAGE FORMING APPARATUS

An electron emission element () includes a first electrode () and a second electrode () which are arranged facing each other, an intermediate layer () that is provided between the first electrode () and the second electrode (), and an insulating layer () that is formed with a thickness d1 on a substrate (). A level difference between the insulating layer () and the first electrode () is smaller than the thickness d1 of the insulating layer (). 1. An electron emission element that applies voltage across a first electrode and a second electrode which are arranged facing each other and emits electrons from the second electrode , the electron emission element comprising:an intermediate layer that is provided between the first electrode and the second electrode; and{'b': '1', 'an insulating layer that is formed with a thickness d on a substrate provided with the first electrode, wherein'}the intermediate layer has conductive fine particles dispersed, and{'b': 2', '1, 'a level difference d between the insulating layer and the first electrode is smaller than the thickness d of the insulating layer.'}2. The electron emission element according to claim 1 , whereinthe insulating layer is provided in a region of the substrate, which is lower than an upper surface of the first electrode.3. The electron emission element according to claim 1 , wherein{'b': 3', '2', '3, 'a film thickness d of the intermediate layer satisfies d<3×d.'}4. The electron emission element according to claim 3 , wherein{'b': 3', '3, 'the film thickness d of the intermediate layer satisfies 0.3 μm Подробнее

Method of manufacturing an emitter

A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.

Manufacture of electron emitting element

Manufacture method for electron-emitting device, electron source, and image-forming apparatus

전자 방출 디바이스를 제조하는 방법은 기판 상에 서로 이격되어 있는 한 쌍의 도전체를 형성하는 단계, 및 탄소 화합물 가스의 분위기 내에서 상기 도전체 쌍의 적어도 하나에 탄소 또는 탄소 화합물을 피착하는 활성화 프로세스를 행하는 단계를 포함한다. 활성화 프로세스는 제1 프로세스 및 제2 프로세스를 포함하는 2개 이상의 스테이지로 이루어진 복수의 프로세스를 포함한다. 제1 프로세스는 최종 활성화 프로세스로서 사용되는 제2 프로세스의 부분적인 프로세스보다 높은 분압을 갖는 탄소 화합물 가스를 함유하는 분위기 내에서 실행된다. The method of manufacturing an electron emitting device includes forming a pair of conductors spaced apart from each other on a substrate, and an activation process of depositing carbon or carbon compound on at least one of the pair of conductors in an atmosphere of carbon compound gas. Performing a step. The activation process includes a plurality of processes consisting of two or more stages including a first process and a second process. The first process is carried out in an atmosphere containing a carbon compound gas having a higher partial pressure than the partial process of the second process used as the final activation process.

전자선장치 및 이것을 사용한 화상표시장치

본 발명은 단순한 구성을 가지고, 전자방출효율이 높고, 안정적으로 동작하는 전자방출소자를 구비한 전자선장치를 제공한다. 이 전자선장치는 기판상에 절연부재 및 게이트를 형성하고, 절연부재에 오목부(7)를 형성하고, 절연부재의 측면에 배치되는 캐소드의 게이트에 대향하는 단부에 있어서, 오목부의 가장자리로부터 게이트(5)를 향해 돌기하는 돌기부분을 형성하고; 상기 돌기부분의 폭방향의 단부에 전계를 집중시켜서 전자를 방출시킨다.

Electron emitting device and method of producing the same

전자 방출 소자는 적어도, 전자 이송부재(1), 전자 방출부재(3), 및 전자 이송부재(1)와 전자 방출부재(3) 사이에 형성된 전계집중 영역(2)을 포함한다. 예를 들면, 전자 이송부재(1)는 도전층일 수 있고, 전계 집중 영역(2)은 도전층 상에 형성된 절연층으로 형성될 수 있으며, 전자 방출부재(3)는 절연층 상에 제공된 입자들로 형성될 수 있다. 전계 집중 영역(2) 내 전계집중에 기인하여, 전자는 전자 이송부재(1)에서 전자 방출부재(3)로 쉽게 주입된다. The electron emission element includes at least an electron transport member 1, an electron emission member 3, and a field concentration region 2 formed between the electron transport member 1 and the electron emission member 3. For example, the electron transport member 1 may be a conductive layer, the electric field concentration region 2 may be formed of an insulating layer formed on the conductive layer, and the electron emission member 3 may be formed of particles provided on the insulating layer. It can be formed as. Due to the field concentration in the electric field concentration region 2, electrons are easily injected from the electron transport member 1 into the electron emission member 3.

Image display apparatus

본 발명은, 밀봉 등의 열공정에 따르는 리어 플레이트와 페이스 플레이트의 휨에 의한, 전자 방출소자로부터 방출된 전자의 페이스 플레이트 상에서의 미스 랜딩(miss landing) 대책을 제공하는 것이다. 본 발명은, 리어 플레이트 위에 형성된 전자 방출소자의 전자 방출부에서 방출되는 전자의 초기 속도 벡터가, 복수의 전자 방출소자 각각으로부터 방출하는 전자가 페이스 플레이트 위에 형성된 각 전자 방출소자에 대응하는 복수의 발광부의 각각에 조사하도록 리어 플레이트의 법선방향의 면내 분포에 따른 분포를 가진다. The present invention provides a countermeasure for miss landing on the face plate of electrons emitted from the electron-emitting device due to warpage of the rear plate and the face plate according to a thermal process such as sealing. According to the present invention, a plurality of light emission elements in which the initial velocity vector of electrons emitted from the electron emission portion of the electron emission element formed on the rear plate corresponds to each electron emission element in which electrons emitted from each of the plurality of electron emission elements is formed on the face plate. It has a distribution according to the in-plane distribution in the normal direction of the rear plate to irradiate each of the parts. 표시장치, 분포, 휨 Display, distribution, warp

Metal composition for manufacturing electron-emitting device, and method for manufacturing electron-emitting device using the same

Electron source and image display device using the same

Light emission device and liquid crystal display device with the light emission device as back light unit

A light emitting apparatus and an LCD(Liquid Crystal Display) using the same as a backlight unit are provided to inhibit the generation of arcing within the inside of a vacuum container and to enhance the brightness by increasing the anode voltage. First and second substrates(12,14) are arranged oppositely to each other and construct a vacuum container. Driving electrodes include the first electrodes and the second electrodes formed on the first and second substrates. Electron-emission members(32) are electrically connected with any one of the first and second electrodes. An insulation layer(28) is located between the first and second electrodes. A resistant layer(42a) is formed on the insulation layer toward the second substrate and has an area corresponding to the insulation layer so that the exposure of the insulation layer toward the second substrate is prevented. A fluorescent layer(34) is formed at a surface of the second substrate. An anode electrode(36) is located at a surface of the fluorescent layer. The resistant layer is located at the entire upper surface of the insulation layer and any one electrode of the first and second electrodes is located at the resistant layer. The insulation layer forms an opening for passing the electron beam and the resistant layer is extended to the sidewall of the opening.

Electron-emitting device, electron source, image-forming apparatus, and production methods thereof

전자 방출 소자는 기판 상에, 한 쌍의 전극, 상기 한 쌍의 전극에 접속되어 있으며 일부분에 갭이 있는 도전성 막, 상기 도전성 막에 접속되면서 상기 갭 부분 내에 제공되어 있으며 탄소가 주성분인 부재, 및 주성분이 탄소인 상기 부재와 상기 기판 사이에, 니켈, 철 및 코발트로 이루어진 그룹에서 선택된 적어도 하나의 원소를 함유한 금속 산화물을 구비하고 있다. An electron-emitting device is provided on a substrate with a pair of electrodes, a conductive film connected to the pair of electrodes and having a gap therein, a member provided in the gap portion while being connected to the conductive film and having carbon as a main component; and A metal oxide containing at least one element selected from the group consisting of nickel, iron and cobalt is provided between the member and the substrate whose main component is carbon.

Electric field emission type electron source

在由玻璃基板组成的绝缘性基板11的一个表面上形成导电性层8。在导电性层8上形成由氧化的多孔质多晶硅层组成的强电场漂移层6。在强电场漂移层6上形成表面电极7。导电性层8由形成在绝缘性基板11上的由铜组成的下侧的导电性膜8a和形成在该导电性膜8a上的由铝组成的上侧的导电性膜8b所构成。强电场漂移层6这样形成：在导电性层8上形成多晶硅层，把该多晶硅层进行多孔质化，然后，进行氧化。上侧的导电性膜8b具有易于与硅发生反应的性质，因此，在多晶硅层形成时能够抑制非晶层的形成。

Electron source, image forming apparatus, and manufacture method for electron source

전자 방출 장치의 전자 방출 특성의 균일성이 향상된다. 기판에는 매트릭스 형태로 배치되고 전극 및 도전성 막을 각각 갖는 전자 방출 장치들에 전기 접속된 행방향 와이어(row-directional wire) 및 열방향 와이어(column-directional wire)가 형성된다. 행방향 와이어의 위치(X1)와 기판의 주연부 사이의 위치(X0)에 의사 행방향 와이어가 형성되고, 열방향 와이어의 위치(Y1)와 기판의 주연부 사이의 위치(Y0)에 의사 열방향 와이어가 형성된다. 의사 행방향 와이어 및 의사 열방향 와이어에는 의사 전극이 전기 접속된다.

Packing material

(57)【要約】 【課題】 電子放出効率の高い電子放出素子を提供す る。 【解決手段】 金属又は半導体からなる電子供給層、電 子供給層上に形成された絶縁体層及び絶縁体層上に形成 された金属薄膜電極からなり、電子供給層及び金属薄膜 電極間に電界を印加し電子を放出する電子放出素子であ って、絶縁体層の膜厚が５０ｎｍ以上であり、電子供給 層は水素化アモルファスシリコンからなる。

Electron-emitting device, electron source using the electron-emitting device, and image forming apparatus using the electron source

Manufacturing method for surface conduction electron emission display

본 발명에 따른 표면전도전자 방출형 표시소자의 제조방법은, 기판 위에 스퍼터링이나 증착법에 의해 금속층의 재료를 갖는 게이트전극을 형성한 후 이를 패터닝하는 단계와; 게이트 전극의 재료와 식각에 선택성이 있는 재료를 사용하여 직진성이 있는 전자빔 증착법이나 열증착법에 의해 캐소드전극을 형성한 후, 캐소드전극의 단차로부터 수십나노미터의 간격을 형성하는 단계와; 캐소드의 재료로 인하여 단락이 날수 있는 가능성을 제거하도록 게이트전극과 캐소드전극의 사이를 약간의 습식 또는 건식으로 식각시키는 단계; 및 식각이 이루어진 게이트전극과 캐소드전극 사이의 절연성을 증진시키도록 각 전극에는 절연재료를 증착법으로 증착하여 얇은 절연막을 형성시키는 단계를 포함한다. According to an aspect of the present invention, there is provided a method of manufacturing a surface conduction electron emission display device, comprising: forming a gate electrode having a material of a metal layer on a substrate by sputtering or vapor deposition and then patterning the gate electrode; Forming a cathode electrode by the electron beam evaporation method or the thermal evaporation method using the material of the gate electrode and the material selective for etching, and then forming a gap of several tens of nanometers from the step of the cathode electrode; Slightly wet or dry etching between the gate electrode and the cathode electrode to eliminate the possibility of a short circuit due to the material of the cathode; And forming a thin insulating film by depositing an insulating material on each electrode by a deposition method so as to enhance the insulating property between the etched gate electrode and the cathode electrode. 여기서, 게이트전극과 캐소드전극의 간격 조절은 게이트 층의 높이와 증착 소스 및 기판의 각도로부터 조절된다. Here, the spacing of the gate electrode and the cathode is adjusted from the height of the gate layer and the angle of the deposition source and the substrate. 또한 게이트전극과 캐소드전극의 절연은, 습식 또는 건식에 의해 게이트전극과 캐소드전극 사이의 기판을 식각시킨 홈을 통해 전자의 통로를 보다 연장하여 이루어진다. Insulation of the gate electrode and the cathode electrode is made by extending the passage of electrons through grooves in which the substrate between the gate electrode and the cathode electrode is etched by wet or dry.

Plasma display panel comprising hollow cathode electron accelerating layer

본 발명은 방전전압을 낮추고, 고휘도 및 고효율의 방전셀을 구현하기 위하여, 오목한 형상의 방전전극 또는 유전체층에 형성된 전자방출증폭층을 구비하거나 유전체층 표면에 형성된 오목부 형상의 전자방출증폭층을 구비하는 플라즈마 디스플레이 패널을 제공한다. The present invention provides an electron emission amplifier layer formed on a concave discharge electrode or dielectric layer or a recessed electron emission amplifier layer formed on the surface of a dielectric layer in order to lower the discharge voltage and implement a discharge cell having high brightness and high efficiency. Provided is a plasma display panel.

Surface electron emission device and display unit having the same

표면전자 방출소자 및 그를 구비한 디스플레이 장치에 관해 개시되어 있다. 개시된 표면전자 방출소자는 순차적으로 적층된 하부전극, 절연층 및 상부전극와, 상기 상부전극 상에 형성된 나노 구조층을 구비하는 것을 특징으로 한다. A surface electron emitting device and a display device having the same are disclosed. The disclosed surface electron emission device is characterized by having a lower electrode, an insulating layer and an upper electrode sequentially stacked, and a nano structure layer formed on the upper electrode.

Manufacture method for electron-emitting device, electron source, and image-forming apparatus

전자 방출 디바이스를 제조하는 방법은 기판 상에 서로 이격되어 있는 한 쌍의 도전체를 형성하는 단계, 및 탄소 화합물 가스의 분위기 내에서 상기 도전체 쌍의 적어도 하나에 탄소 또는 탄소 화합물을 피착하는 활성화 프로세스를 행하는 단계를 포함한다. 활성화 프로세스는 제1 프로세스 및 제2 프로세스를 포함하는 2개 이상의 스테이지로 이루어진 복수의 프로세스를 포함한다. 제1 프로세스는 최종 활성화 프로세스로서 사용되는 제2 프로세스의 부분적인 프로세스보다 높은 분압을 갖는 탄소 화합물 가스를 함유하는 분위기 내에서 실행된다. The method of manufacturing an electron emitting device includes forming a pair of conductors spaced apart from each other on a substrate, and an activation process of depositing carbon or carbon compound on at least one of the pair of conductors in an atmosphere of carbon compound gas. Performing a step. The activation process includes a plurality of processes consisting of two or more stages including a first process and a second process. The first process is carried out in an atmosphere containing a carbon compound gas having a higher partial pressure than the partial process of the second process used as the final activation process.

An electron source substrate, an electron source and an image forming apparatus using the substrate, and a manufacturing method thereof

나트륨 함유 기판은 전기 도전성막이 형성될 변형된 표면을 갖는다. 이 변형된 표면은 나트륨 농도가 유리 기판의 벌크체(bulk body)보다 낮고, 양호하게는 모든 금속 원소에 대한 나트륨 함유비가 2원자% 이하인 층으로 구성된다. 이 변형된 표면은 유리 기판의 벌크체에 비해 감소된 양의 황을 함유할 수 있다.

Field emission device and fabrication method thereof and field emission display device using it and fabrication method thereof

A field emission device, a fabricating method thereof, a field emission display device using the same, and a fabricating method thereof are provided to simplify a manufacturing process and reduce a manufacturing cost by forming a vertical nano-gap-sized field emission device between a first and a second electrode. A metal layer(110') is formed on an upper surface of a substrate(100). An insulating layer(120') having a contact hole is formed on an upper surface of the metal layer. The insulating layer is wider than the metal layer. A first and second electrodes(130,140) are formed apart from each other on the insulating layer and the substrate. A field emission unit(150) having a nano-gap is formed between the first and second electrodes.

Electron source, image forming apparatus using same, and manufacturing and driving method of electron source

본 발명은 전자 소스와 특히 전자방출소자로서 표면도전형 전자방출소자를 포함하는 화상 형성 장치, 비선형 전압/전류 특성을 가지는 비선형 소자를 통하여 전자방출부 형성박막에 전압을 인가함으로써 에너지화 형성처리 단계가 실행되는 전자 소스 및 화상 형성장치의 제조 방법, 및 비선형 소자가 표면도전형 전자방출소자에 직렬로 연결된 전자 소스 및 화상 형성 장치와 그 구동 방법에 관한 것이다.

Display device and a method for preparing the same

본 발명은 그 구조가 간단하고 간단한 제조공정으로 용이하게 제조될 수 있는 디스플레이 장치 및 이의 제조 방법을 제공하는 것을 목적으로 하며, 이 목적을 달성하기 위하여 본 발명은, 소정의 간격을 두고 이격되며 서로 마주보는 제1기판 및 제2기판과, 상기 제1기판 및 상기 제2기판과 함께 발광셀을 한정하는 격벽과, 상기 발광셀 내에 배치되는 애노드전극과, 상기 제1기판 및 상기 제2기판 중 어느 하나의 안쪽 면에 배치되는 도전성 실리콘층과, 적어도 일부가 상기 도전성 실리콘층에 배치되는 산화된 다공성 실리콘층과, 상기 발광셀 내에 배치되는 형광체층과, 상기 발광셀 내에 있는 가스를 포함하는 디스플레이 장치 및 이의 제조 방법을 제공한다. The present invention aims to provide a display device and a method of manufacturing the same in which the structure thereof is simple and can be easily manufactured by a simple manufacturing process. A first substrate and a second substrate facing each other, a partition wall defining a light emitting cell together with the first substrate and the second substrate, an anode electrode disposed in the light emitting cell, and the first substrate and the second substrate. A display comprising a conductive silicon layer disposed on either inner surface, an oxidized porous silicon layer at least partially disposed on the conductive silicon layer, a phosphor layer disposed in the light emitting cell, and a gas in the light emitting cell An apparatus and a method of manufacturing the same are provided.

Electronic device and manufacturing method thereof

Electron-emitting device and manufacturing method thereof

본 발명은 다이아몬드층을 이용한 MIS, pn, pin구조로 순방향 바이어스를 인가하고, 전자를 전자공급층(12)에서 p형의 다이아몬드층(13)에 공급함으로써, 효율적으로 전자선을 방출하는 전자방출소자를 제공하는 것으로써, 전자방출소자의 제조방법으로써, 기상합성법에 의한 연속막상의 다이아몬드층을 형성하고, 에칭에 의해 다이아몬드층을 소정의 두께로 조정한다. 또한, 다이아몬드층(13)표면의 전자친화력상태를 임의로 제어하기 위해, 상기 표면을 진공자외선 조사나 수소 또는 산소 플라즈마에 노출시키는 방법등을 이용한다. The present invention provides an electron-emitting device that efficiently emits an electron beam by applying a forward bias in a MIS, pn, and pin structure using a diamond layer and supplying electrons from the electron supply layer 12 to the p-type diamond layer 13. By providing a, a diamond layer on a continuous film is formed by a vapor phase synthesis method as a method of manufacturing an electron-emitting device, and the diamond layer is adjusted to a predetermined thickness by etching. In addition, in order to arbitrarily control the electron affinity state of the surface of the diamond layer 13, the method of exposing the said surface to vacuum ultraviolet irradiation, hydrogen, or oxygen plasma, etc. is used.

Manufacturing method of electron-emitting device, electron source, and image-forming apparatus

전자 방출 영역을 갖고 있는 전자 도전막이 기판 상에 배치된 전극들 사이에 제공되는 전자 방출 소자의 제조 방법에 있어서, 전자 방출 영역의 형성 단계는 전자 도전막에 구조적 잠상을 형성하는 단계 및 구조적 잠상을 현상하는 단계를 포함한다. 기판 상에 배열된 다수의 전자 방출 소자를 포함하는 전자원 및 화상 형성 부재와 결합하는 화상 형성 장치는 상기 방법으로 제조된 전자 방출 소자를 사용하여 제조된다. 각 전자 방출 소자의 전자 방출 영역의 위치 및 형태는 균일한 소자 특성을 달성하도록 제어되어, 전자 방출 소자들 사이에 방출된 전자 량 및 화면의 밝기의 변화를 적게 할 수 있다. 또, 전자 방출 영역의 형성시 많은 전류를 흐르게 할 필요가 배제되고, 배선의 전류 용량이 감소될 수 있다. In the method of manufacturing an electron emitting device in which an electron conductive film having an electron emitting region is provided between electrodes disposed on a substrate, the forming of the electron emitting region comprises forming a structural latent image in the electron conductive film and a structural latent image. Developing. An image forming apparatus that combines an electron source including a plurality of electron emitting elements arranged on a substrate and an image forming member is manufactured using the electron emitting elements manufactured by the above method. The position and shape of the electron emitting region of each electron emitting device can be controlled to achieve uniform device characteristics, so that the amount of electrons emitted between the electron emitting devices and the brightness of the screen can be reduced. In addition, the need for flowing a large amount of current in the formation of the electron emission region is eliminated, and the current capacity of the wiring can be reduced.

Electronic emitting device, electronic source and image forming device

一种电子发射器件,包括在基板上的一对电极,与该对电极连接并且在局部有间隙的导电膜,设置于该间隙部分中并且与导电膜相连的其主成份为碳的部件,和在其主成份为碳的所述部件与所述基板之间且包含选自由镍、铁和钴构成的组中的至少一种元素的金属氧化物。

Image display apparatus

提供了一种对从电子发射器件发出的电子在前板上的偏移的对策，该偏移由于伴随诸如密封连接之类的加热过程出现的后板和前板的翘曲而产生。从在后板上形成的电子发射器件的电子发射区发出的电子的初始速度向量，具有与后板法线方向的面内分布相对应的分布趋势，以便从多个电子发射器件中每一个发出的电子可以照射在前板上形成的多个发光部分中的与每个电子发射器件相对应的每个发光部分。

Electron-emitting device, electron source, image display device, and method for manufacturing electron-emitting device

Electronic emitting device, electronic source and image forming device

一种电子发射器件，包括在基板上的一对电极，与该对电极连接并且在局部有间隙的导电膜，设置于该间隙部分中并且与导电膜相连的其主成份为碳的部件，和在其主成份为碳的所述部件与所述基板之间且包含选自由镍、铁和钴构成的组中的至少一种元素的金属氧化物。

Thin film manufacturing method and electron-emitting device manufacturing method

Method for manufacturing of electronic emission device, source of electrons that uses it, device of image generation and device of information display and reproduction

FIELD: electricity. ^ SUBSTANCE: method for manufacturing of electronic emission device includes deposition of the first and second electroconductive films, opposite to each other, to generate gap between end sections of the first and second electroconductive films. End of the first electroconductive film includes a section, minimum distance d1 from which to the second electroconductive film is equal to 10 nm or less. Let d2 stand for minimum distance between end of the first electroconductive film, which is distant from the section, minimum distance d1 from which to the second electroconductive film equals 10 nm or less, by minimum distance d1, and end of the second electroconductive film. Ratio d2/d1ëÑ1.2 is maintained. ^ EFFECT: development of electronic emission device with high efficiency of electronic emission, which provides for satisfactory characteristics of electronic emission for a long time, and source of electrons, and device of image generation that uses it. ^ 7 cl, 58 dwg, 6 tbl, 5 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 399 983 (13) C2 (51) МПК H01J H01J H01J 9/12 9/18 9/20 (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (30) Конвенционный приоритет: 28.12.2004 JP 2004-379955 (73) Патентообладатель(и): КЭНОН КАБУСИКИ КАЙСЯ (JP) (43) Дата публикации заявки: 10.06.2010 2 3 9 9 9 8 3 (45) Опубликовано: 20.09.2010 Бюл. № 26 (56) Список документов, цитированных в отчете о поиске: JP 2000-251642 A, 14.09.2000. RU 2089001 C1, 27.08.1997. RU 2210134 C2, 10.08.2003. JP 2000-251643 A, 14.09.2000. US 6380665 B1, 30.04.2002. 2 3 9 9 9 8 3 R U Адрес для переписки: 129090, Москва, ул. Б.Спасская, 25, стр.3, ООО "Юридическая фирма Городисский и Партнеры", пат.пов. Ю.Д.Кузнецову, рег.№ 595 C 2 C 2 (62) Номер и дата подачи первоначальной заявки, из которой данная заявка выделена: 2007128967 21.12.2005 (54) СПОСОБ ИЗГОТОВЛЕНИЯ УСТРОЙСТВА ЭЛЕКТРОННОЙ ЭМИССИИ, ИСТОЧНИКА ...

Electron source substrate and electron source and image-forming apparatus using such substrate as well as method of manufacturing the same

含钠玻璃基片，具有改性表面，其上将要形成导电薄膜。改性表面由一层钠浓度小于玻璃基片本体的钠浓度的层构成，该层的钠含量与所有金属元素的比例不大于2%原子百分比。与玻璃基片的主体相比，改性表面上硫含量更低。

Electron emitting element and display device using the same

(57)【要約】 【課題】 電子放出効率の高い電子放出素子を提供す る。 【解決手段】 金属又は半導体からなる電子供給層、電 子供給層上に形成された絶縁体層及び絶縁体層上に形成 された金属薄膜電極からなり、電子供給層及び金属薄膜 電極間に電界を印加し電子を放出する電子放出素子であ って、絶縁体層の膜厚が５０ｎｍ以上であり、電子供給 層は２．５μｍ以上の膜厚を有する。

Cold-emission film cathode and its production process

FIELD: effective films for field-effect electron emitters used to produce flat displays, electronic microscopes, microwave devices, light sources, and the like. SUBSTANCE: cold-emission cathode whose substrate is covered with carbon film has its carbon film made in the form of irregular structure incorporating carbon micro- and nanoedges and/or micro- and nanofilaments oriented perpendicular to substrate surface, their characteristic scale is 0.05-1 mcm and packing density, 0.1-100 mcm -2 ; they are covered on top with nanodiamond film whose thickness is a fraction of micrometer. Such cathode is produced in two stages. During first stage carbon film in the form of irregular structure incorporating carbon microedges and/or microfilaments is deposited in DC discharge from mixture of hydrogen and carbon-containing dope at current density of 0.15-0.5 A/sq.cm; deposition is made in mixture of hydrogen with vapors of ethyl alcohol 5-15% or methane 6-30% at full pressure of 50-300 torr and substrate temperature of 700-1100 C, followed by deposition during second stage of diamond film, about 0.1- 0.5 mcm thick or using hot-filament technology, or in same DC discharge, at carbon-containing gas (methane in our case) concentration in hydrogen of 0.5-4% and at surface temperature of 850-1000 C. EFFECT: enhanced electron-emission characteristics, stability in electric fields, enlarged functional capabilities. 7 cl, 3 dwg 8Зсстбс ПЧ сэ РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (19) (51) МПК? ВИ” 2 494 328” С2 НО1 + 1/30, 9/02 12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21), (22) Заявка: 98109664/09, 19.05.1998 (24) Дата начала действия патента: 19.05.1998 (43) Дата публикации заявки: 20.03.2000 (46) Дата публикации: 10.12.2002 (56) Ссылки: КЦ 2099808 СЛ, 20.12.1997. КУ 2083018 СЛ, 27.06.1997. ЗЦ 9661782 А, 15.10.1997. $4 71326 А, 31.12.1947. ЕР 0087826 А2, 07.09.1983. ЕР 0687018 АЗ, 13.12.1995. (98) Адрес для переписки: 119121, Москва, Ростовская наб,., 1, ...

Electron-emitting device, electron source and manufacture method for image-forming apparatus

A method of manufacturing an electron-emitting device has a step of forming a pair of conductors on a substrate, the conductors being spaced from each other, and an activation process of depositing carbon or carbon compound on at least one side of the pair of conductors in an atmosphere of carbon compound gas. The activation process includes a plurality of processes of two or more stages including a first process and a second process. The first process is executed in an atmosphere of the carbon compound gas having a partial pressure higher than a partial pressure of the gas in the second process, with the second process being the last activation process.

Electron-emitting device, method of manufacturing the same and application thereof

提供一种电子发射元件及其制造方法和它们的应用，该电子发射元件是可抑制电子发射部附近的异常放电，电子发射特性稳定，电子发射效率高的横型电子发射元件。该电子发射元件的制造方法包括：制备在绝缘性基板(11)表面上配置的电子发射电极(12)和控制电极(14)的绝缘性基板的第1工序，以及为使电子发射电极(12)和控制电极(14)相连接而在位于电子发射电极(12)和控制电极(14)之间的绝缘性基板(11)的表面覆盖电阻膜(16)的第2工序，电阻膜(16)是电子发射电极(12)的表面，配置成为覆盖与控制电极(14)对置的端部。

Electron emission device, electron source, and image display having dipole layer

本发明涉及具有偶极子层的电子发射器件、电子源和图像显示器，其中，提供一种具有足够的开/关特性而且能够在低电压下有效地发射电子的电子发射器件。电子发射器件包括基片、设置在基片上的阴极电极和栅电极、覆盖阴极电极的表面的绝缘层、以及通过用氢终止绝缘层表面形成的偶极子层。

Electron emitting device, electron source, and method of manufacturing image forming apparatus

Emitter material for cathode ray tube and the method for manufacturing the same

An emitter material for a CRT comprises mixed crystal or solid solution of at least two kinds of alkaline earth metal carbonate, wherein at least one alkaline earth metal carbonate is dispersed or separated in the mixed crystal or solid solution. The alkaline earth metal carbonate, which is an emitter material for the CRT. is coated onto the base metal and thermally decomposed in a vacuum to form an emitter of an alkaline earth metal. This emitter, which is proper for a larger screen size, high brightness and high resolution CRT, can be provided with enough life characteristics even under the operating condition of the emission current density of 2A/cm2.

Electron emitting element, electron beam generator and image forming apparatus using the element

VACUUM CATHODE ELECTRONIC TUBE BASED ON NANOTUBES OR NANOWIAS

L'invention concerne un tube électronique sous vide comprenant au moins une cathode (C) émissive d'électrons et au moins une anode (A) disposées dans une enceinte à vide (E), la cathode présentant une structure planaire comprenant un substrat (Sb) comprenant un matériau métallique, une pluralité d'éléments nanotube ou nanofil isolés électriquement du substrat, l'axe longitudinal desdits éléments nanotube ou nanofil étant sensiblement parallèle au plan du substrat, et au moins un premier connecteur (CE1) relié électriquement à au moins un éléments nanotube ou nanofil de manière à pouvoir appliquer à l'élément nanofil ou nanotube un premier potentiel électrique (V1). The invention relates to a vacuum electronic tube comprising at least one cathode (C) emitting electrons and at least one anode (A) arranged in a vacuum chamber (E), the cathode having a planar structure comprising a substrate (Sb ) comprising a metallic material, a plurality of nanotube or nanowire elements electrically isolated from the substrate, the longitudinal axis of said nanotube or nanowire elements being substantially parallel to the plane of the substrate, and at least one first connector (CE1) electrically connected to at least a nanotube or nanowire element so as to be able to apply to the nanowire or nanotube element a first electric potential (V1).

Printing technique with high aspect ratio electrode formation method

PURPOSE: A method for forming an electrode is provided to easily form an electrode having high aspect ratio and to improve product performance by improving light transmission rate reducing resistance. CONSTITUTION: A plurality of partition walls(121) is formed in either a plastic substrate(100) or glass substrates. An electrode(140) is formed by printing conductive material between the partition walls. The conductive material is nano metal ink including Ag. A stamper and substrate in which the plurality of partition walls is formed are mounted on a molder within a chamber. The chamber forms a vacuum. A wall pattern formed on the stamper is transferred to the substrate by controlling heating temperature, welding force, and pressing time.

Electron-emitting device, electron source, image-forming apparatus, and method for producing electron-emitting device and electron-emitting apparatus

본 발명에 의하면, 균일한 전자방출특성을 지닌 내구성이 있는 전자방출소자와, 전자원 및 장기간 균일한 표시특성을 지닌 화상형성장치를 제조하는 방법이 제공된다. 본 발명에 의한 전자방출소자의 제조방법은, 기판표면상에 음극전극을 배치하는 공정; 상기 음극전극에 대향한 전극을 배치하는 공정; 상기 음극전극상에 주성분으로서 탄소를 함유하는 섬유를 복수본 배치하는 공정; 및 상기 음극전극에 대향한 전극에 대해서 감압조건하에 해당 음극전극에 인가된 전위보다 높은 전위를 인가하는 공정을 구비한 것을 특징으로 한다. According to the present invention, there is provided a durable electron-emitting device having a uniform electron emission characteristic, an electron source and a method for manufacturing an image forming apparatus having a uniform display characteristic for a long time. A method of manufacturing an electron emitting device according to the present invention comprises the steps of: arranging a cathode electrode on a substrate surface; Disposing an electrode facing the cathode electrode; Arranging a plurality of fibers containing carbon as a main component on the cathode electrode; And applying a potential higher than that applied to the cathode electrode under reduced pressure to the electrode facing the cathode electrode.

Emission device and method for forming

An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

THIN FILM COLD CATHODE STRUCTURE AND DEVICE USING THE SAME.

ELECTRON-EMITTING DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE

Field emission-type electron source

A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

Electron-emitting device and electron source and image-forming apparatus using the same as well as method of manufacturing the same

An electron-emitting device comprises a pair of electrodes arranged on a substrate and an electroconductive film connecting said electrodes and having an electron-emitting region formed therein. The electron-emitting region contains a fissure having an even width of less than 50nm and preferably shows a voltage applicable length of less than 5nm. An electron source comprising a plurality of such electron-emitting devices is capable of realizing uniform electron beam emission and an image-forming apparatus comprising such an electron source is suitable for high resolution image display.

Thin-film cold cathode structure and device using this cathode

The cold cathode device according to the present invention comprises a first electrode (2) formed on a substrate (1), an insulating film (3) formed on the first electrode, a thin film (4) formed on the insulating film for generating excited electrons and a second electrode (5) formed on the thin film. The electrons are injected by the second electrode during the first half-wave of each period of an A.C. voltage. The injected electrons form the space charge layer between the insulating film and the thin film. During the second half-wave of each period, the excited electrons are generated from the electrons stored in the space charge layer within the thin film and are emitted by the second electrode.

Electron emission apparatus and method for making the same

An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the gird, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, and the electron emitter includes a first end, a second end and a gap. At least one electron emission end is located in the gap.

Method for manufacturing emitter for cathode ray tube

An emitter material for a CRT comprises mixed crystal or solid solution of at least two kinds of alkaline earth metal carbonate, wherein at least one alkaline earth metal carbonate is dispersed or separated in the mixed crystal or solid solution. The alkaline earth metal carbonate, which is an emitter material for the CRT, is coated onto the base metal and thermally decomposed in a vacuum to from an emitter of an alkaline earth metal. This emitter, which is proper for a larger screen size, high brightness and high resolution CRT, can be provided with enough life characteristics even under the operating condition of the emission current density of 2A/cm 2 .

Electronic emitter and source of electrons, image-forming apparatus and information display and viewing device

FIELD: electrical engineering. ^ SUBSTANCE: invention is referred to electronic emission, source of electrons where the emission is used, and to the image-forming apparatus. The electronic emitter includes conducting film 1 and 2 located opposite each other on the base plate surface. Such arrangement is intended for generating gap between the ends of the both conducting films. The end of the first conducting film includes a section where minimum distance d1 to the second conducting film is 10 nm or less. Assume that d2 is a minimum distance between the end of conducting film 1 being away from the section, minimum distance dl to the second conducting film, which is 10 nm or less by the minimum distance d1 and the end of second conducting film. The following relation is fulfilled d2/d1ëÑ1.2. ^ EFFECT: electronic emitter capable of ensuring high effectiveness of electronic emission at high stability. ^ 16 cl, 58 dwg, 6 tbl, 3 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 353 018 (13) C1 (51) МПК H01J 31/08 (2006.01) H01J 1/316 (2006.01) H01J 1/53 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (30) Конвенционный приоритет: 28.12.2004 JP 2004-379955 (73) Патентообладатель(и): КЭНОН КАБУСИКИ КАЙСЯ (JP) (45) Опубликовано: 20.04.2009 Бюл. № 11 2 3 5 3 0 1 8 (56) Список документов, цитированных в отчете о поиске: JP 08-031315 А, 02.02.1996. RU 2089001 С1, 27.08.1997. RU 2210134 С2, 10.08.2003. JP 10-040806 А, 13.02.1998. JP 2000-251643 А, 14.09.2000. (85) Дата перевода заявки PCT на национальную фазу: 30.07.2007 2 3 5 3 0 1 8 R U (87) Публикация PCT: WO 2006/070849 (06.07.2006) C 1 C 1 (86) Заявка PCT: JP 2005/024013 (21.12.2005) Адрес для переписки: 129090, Москва, ул.Б.Спасская, 25, стр.3, ООО "Юридическая фирма Городисский и Партнеры", пат.пов. А.В.Мицу, рег.№ 364 (54) УСТРОЙСТВО ЭЛЕКТРОННОЙ ЭМИССИИ, ИСТОЧНИК ЭЛЕКТРОНОВ, ИСПОЛЬЗУЮЩИЙ ЕГО, УСТРОЙСТВО ФОРМИРОВАНИЯ ИЗОБРАЖЕНИЯ И УСТРОЙСТВО ОТОБРАЖЕНИЯ И ...

Image forming apparatus and manufacturing method

Field emission electron source

Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, and electron-beam curing device

The present invention provides an electron emitting element which has good energy efficiency and which is capable of controlling a value of current flowing in an electron acceleration layer and an amount of emitted electrons by adjusting a resistance value of the electron acceleration layer and an amount of generated ballistic electrons. An electron emitting element 1 includes an electron acceleration layer 4 including a fine particle layer containing insulating fine particles. In the electron emitting element 1, Ie=α·R−0.67 where Ie [A/cm2] is electron emission current per unit area during the voltage application and R is element resistance [Ω·cm2] per unit area, the element resistance being obtained by dividing (a) a voltage applied between the electrode substrate 2 and the thin-film electrode 3 during the voltage application by (b) current in element per unit area which current flows between the electrode substrate 2 and the thin-film electrode 3 during the voltage application, and where α is not less than 2.0×10−6, and the electron emission current Ie is not less than 1.0×10−9.

Image forming device and its producing method

本发明涉及一种成象装置，包括：第一基板，其上设有一个功能元件和与所述功能元件相连接的电子线路；和第二基板其上有形成图象的区域；所述第一和第二基板相互相对设置，上述第一和第二基板之间的空间保持在低压状态下从而在所述第二基板上的所述区域中形成一个图象，并且线路是先用印刷方法沉积再用电镀印刷图案的方法由薄片状的导电材料制成的。

Vacuum electron tube with planar cathode based on nanotubes or nanowires

Vacuum electron tube with planar cathode based on nanotubes or nanowires The invention relates to a vacuum electron tube comprising at least one electron-emitting cathode (C) and at least one anode (A) arranged in a vacuum chamber (E), the cathode having a planar structure comprising a 5 substrate (Sb) comprising a conductive material, a plurality of nanotube or nanowire elements electrically insulated from the substrate, the longitudinal axis of said nanotube or nanowire elements being substantially parallel to the plane of the substrate, and at least one first connector (CE1) electrically linked to at least one nanotube or nanowire element so as to be able to apply 10 a first electrical potential (V1) to the nanowire or nanotube element. (FIG. 7) 4/17 70 CE1 E NT e-y Sb e- Z x IsA C Vo CE1 e- e- e z Is Sb x FIG.7

Electron emitting element, electron source, image display device and manufacturing method therefor

(57)【要約】 【課題】 電子放出効率が高く、且つ、特性均一な電子 放出素子を実現すると共に、同素子を使用した電子源、 画像表示装置の表示ばらつきを抑制し、均一で良好な画 質の画像を表示できるようにする。 【解決手段】 基体１表面上に、間隔を置いて配置され た電極２，３と、これらの電極間に配置され、電極３に 接続したカーボン膜４’とを有し、このカーボン膜４’ と電極２との間に間隙５が配置されており、間隙５にお いて、電極３に接続したカーボン膜４’の表面と電極２ の表面との間隔が、基体１の表面よりも、基体１の表面 から離れた上方において狭くなっていることを特徴とす る電子放出素子、及び同素子を使用した電子源、画像表 示装置。

Emitter material for a cathode ray tube, as well as a method for making it

Emitter and method of making

An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Electron emitting device, electron source and display unit with use of this device and methods of their production

FIELD: physics. SUBSTANCE: invention relates to an electron emitting device, a source of electrons with the use of such a device and to the device of visual display. The electron emitting device includes the base layer, supplied with the first section, which contains silicon oxide and the second section, located on one line with the first section and having higher thermal conductivity, and the electro-conductive film, which includes a clearance, in this case the electro-conductive film is located on the base layer, the first and second sections have higher resistance than the resistance of the electro-conductive film, and the clearance is located in the first section. The proposed electron emitting device has a small dispersion characteristic of emission of electrons and lowered "fluctuation" quantity of emission of electrons. EFFECT: creating an electron emitting device with a small dispersion characteristic of emission of electrons and lowered "fluctuation" quantity of emission of electrons. 22 cl, 27 dwg ÐÎÑÑÈÉÑÊÀß ÔÅÄÅÐÀÖÈß RU (19) (11) 2 331 134 (13) C2 (51) ÌÏÊ H01J 1/316 (2006.01) H01J 9/02 (2006.01) H01J 31/08 (2006.01) ÔÅÄÅÐÀËÜÍÀß ÑËÓÆÁÀ ÏÎ ÈÍÒÅËËÅÊÒÓÀËÜÍÎÉ ÑÎÁÑÒÂÅÍÍÎÑÒÈ, ÏÀÒÅÍÒÀÌ È ÒÎÂÀÐÍÛÌ ÇÍÀÊÀÌ (12) ÎÏÈÑÀÍÈÅ ÈÇÎÁÐÅÒÅÍÈß Ê ÏÀÒÅÍÒÓ (21), (22) Çà âêà: 2006126895/28, 24.07.2006 (72) Àâòîð(û): ÍÓÊÀÍÎÁÓ Êîêè (JP), ÑÀÒÎ Òàêàõèðî (JP) (24) Äàòà íà÷àëà îòñ÷åòà ñðîêà äåéñòâè ïàòåíòà: 24.07.2006 (73) Ïàòåíòîîáëàäàòåëü(è): ÊÝÍÎÍ ÊÀÁÓÑÈÊÈ ÊÀÉÑß (JP) R U (30) Êîíâåíöèîííûé ïðèîðèòåò: 25.07.2005 JP 2005-214528 (43) Äàòà ïóáëèêàöèè çà âêè: 27.01.2008 (45) Îïóáëèêîâàíî: 10.08.2008 Áþë. ¹ 22 2 3 3 1 1 3 4 (56) Ñïèñîê äîêóìåíòîâ, öèòèðîâàííûõ â îò÷åòå î ïîèñêå: US 2003062816 À1, 03.04.2003. US 2005052108 A1, 10.03.2005. JP 08-031315 A, 02.02.1996. US 2004245906 A1, 09.12.2004. JP 2001283718 A, 12.10.2001. SU 855782 A1, 15.08.1981. RU 2210134 C2, 10.08.2003. ÎÒÎÁÐÀÆÅÍÈß Ñ ÈÑÏÎËÜÇÎÂÀÍÈÅÌ ÒÀÊÎÃÎ ÓÑÒÐÎÉÑÒÂÀ È ÑÏÎÑÎÁÛ ÈÇÃÎÒÎÂËÅÍÈß ÈÕ (57) Ðåôåðàò: Èçîáðåòåíèå ...

Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same

An electron emitting device includes at least an electron transporting member ( 1 ), an electron emitting member ( 3 ), and an electric field concentration region ( 2 ) formed between the electron transporting member ( 1 ) and the electron emitting member ( 3 ). For example, the electron transporting member ( 1 ) may be a conductive layer, the electric field concentration region ( 2 ) may be formed of an insulating layer formed on the conductive layer, and the electron emitting member ( 3 ) may be formed of particles provided on the insulating layer. Due to the electric field concentration in the electric field concentration region ( 2 ), electrons are easily injected from the electron transporting member ( 1 ) to the electron emitting member ( 3 ).

Field emission display device

本发明提供一种场发射显示装置，其包括：一绝缘基底；多个行电极引线与列电极引线分别平行且等间隔设置于绝缘基底上，该多个行电极引线与多个列电极引线相互交叉设置，每两个相邻的行电极引线与两个相邻的列电极引线形成一个网格；多个电子发射单元，每个电子发射单元对应一个网格设置，每个电子发射单元包括间隔设置的一阴极电极与一阳极电极，以及一阴极发射体，所述阴极发射体与阳极电极间隔设置；其中，所述每个电子发射单元进一步包括一第一聚焦电极及第二聚焦电极，所述第一聚焦电极和第二聚焦电极分别设置于阴极发射体两侧。

Metal-containing composition for forming electron-emitting device and methods of manufacturing electron-emitting device,electron source and image-forming apparatus

An electron source substrate on which two or more electron-emitting elements are arranged along two or more lines in a matrix is characterised in that:    each electron-emitting element has a thin film member formed by applying on a substrate a liquid containing a metal and water soluble resin using an ink-jet system, and heating.

Electron source substrate and image forming apparatus

Electron-emitting device, electron source using the electron-emitting devices, and image-forming apparatus using the electron source

Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.

Cold cathode device

Electron-emitting device, electron source using the electron-emitting devices, and image-forming apparatus using the electron source

There is provided an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate (1), first and second carbon films (21b,21a) laid with a first gap (8) in between on the surface of the substrate (1), and first and second electrodes (4b,4a) electrically connected to the first carbon film (21b) and to the second carbon film (21a), respectively. In the electron-emitting device, the distal portion (B) of the first carbon film (21B) is located above the surface of the substrate (1) at a greater distance (Hb) than the distance (Ha) of the distal portion (A) of the second carbon film (21a) above the surface of the substrate (1). In use, to effect electron emission, a higher potential is applied to the first electrode (4b) than to the second electrode (4a). An electron source is provided having a multiplicity of these devices on a common substrate (1). Such an electron source is provided in image forming apparatus opposite to an image forming member.

Field emission device and its method of fabrication

A field emission device has an improved structure in which electron emission from a cathode is enhanced through external light radiation. The field emission device includes: a light transmitting substrate; a cathode unit arranged on the light transmitting substrate and adapted to emit electrons, the cathode unit including: a first electrode layer of a transparent conductive material arranged on the substrate; a first electron emission layer of a semiconductive polymer organic material arranged on the first electrode layer; a second electron emission layer of a composite of a carbon-based inorganic material and a semiconductive polymer organic material arranged on the first electron emission layer; and a second electrode layer of a conductive material arranged on the second electron emission layer. The field emission device further includes an anode arranged to face the cathode unit.

Field emission source array, method for producing the same, and its use

本发明提供能够使表面电极的所希望的区域发射出电子的场发射型电子源及其制造方法,场发射型电子源10具备作为导电性基板的p型硅基板1、形成于p型硅基板1内的主表面侧的带状的作为扩散层的n型区域8、形成于n型区域8上,从n型区域注入的电子发生漂移的、氧化的多孔多晶硅构成的强电场漂移层6、形成于强电场漂移层6之间的多晶硅层3,以及在与n型区域8交叉的方向上形成带状,跨越强电场漂移层6上面及多晶硅层3上面形成的导电性薄膜构成的表面电极7。适当选择施加电压的n型区域8和表面电极7,能够使得施加电压的表面电极7中只有与施加电压的n型区域8交叉的区域发射出电子,所以能够使表面电极7的所希望的区域发射出电子。

Hot electron emission array for e-beam photolithography and display screens

This invention relates to a device for emitting addressable locations comprises parallel spaced-apart first conductors (10) intersecting with parallel spaced-apart second conductors (11). The intersecting first and second conductors define addressable locations where electrons (12) are emitted in response to the application of an energizing voltage. One face of the first conductors is covered with an insulating layer (13) against which the second conductors (11) are applied, this insulating layer (13) forming a tunnel barrier for hot electrons (12) that travel ballistically through and are emitted from the second conductors (11) in response to the application of the energizing voltage. The emitted electrons impinge a target (30, 40, 50) which can be a light-emitting screen of a flat panel display, such as an electroluminescent polymer of a flat panel screen, or an electroluminescent phosphorous screen, or a target wafer bombarded by the electrons emitted from a flexible e-beam lithography mask. The intersecting conductors (10, 11) can be Al wires, or can be produced by C-MOS technology.

Flat type field emission display and manufacturing method thereof

본 발명은 평면형 전계방출소자 및 그 제조방법에 관한 것으로, 종래 평면형 전계방출소자는 오버행 절연막으로 실리콘 질화막 또는 실리콘 산화막을 사용하여 하지막에 스트레스를 주어 소자의 수명이 단축되는 문제점이 있었다. 이와 같은 문제점을 감안한 본 발명은 기판의 상부에 하부전극을 형성하고, 그 하부전극의 측면부에 필드절연막을 형성하는 단계와; 상기 필드절연막의 사이 하부전극상에 터널링 절연막을 형성하는 단계와; 상부전극패드 및 상부전극버스를 순차 형성하는 단계와; 상기 상부전극패드 및 상부전극버스의 상부에 비정질 실리콘 오버행 절연막을 형성하는 단계와; 상기 오버행 절연막을 마스크로 하여 상기 터널링 절연막상에 상부전극을 형성하는 단계를 통해, 그 오버행 절연막을 비정질 실리콘으로 형성하여, 하지막에 미치는 잔류응력을 줄여 소자의 수명을 연장하는 효과와 아울러 그 평면형 전계방출소자의 동작 신뢰성을 향상시키는 효과가 있다. The present invention relates to a planar field emission device and a method of manufacturing the same, the conventional planar field emission device has a problem that the life of the device is shortened by stressing the underlying film using a silicon nitride film or a silicon oxide film as an overhang insulating film. In view of the above problems, the present invention includes forming a lower electrode on an upper portion of a substrate and forming a field insulating film on a side surface of the lower electrode; Forming a tunneling insulating film on a lower electrode between the field insulating films; Sequentially forming an upper electrode pad and an upper electrode bus; Forming an amorphous silicon overhang insulating film on the upper electrode pad and the upper electrode bus; By forming the upper electrode on the tunneling insulating film using the overhang insulating film as a mask, the overhang insulating film is formed of amorphous silicon, thereby reducing the residual stress on the underlying film to extend the life of the device and its planar shape. There is an effect of improving the operation reliability of the field emission device.

Electron emitting element

An electron emitting element (10A) is provided with an emitter part (12) composed of a dielectric material, and an upper electrode (14) and a lower electrode (16) whereupon a driving voltage (Va) is applied for electron emission. The upper electrode (14) is formed on an upper plane of the emitter part (12), and the lower electrode (16) is formed on a lower plane of the emitter part (12). The upper electrode (14) is provided with a plurality of penetrating parts (20) from which the emitter part (12) is exposed. In the upper electrode (14), a plane facing the emitter part (12) at a circumference part (26) of the penetrating part (20) is separated from the emitter part (12).

Electron-emitting device, electron source and display apparatus using the same device, and manufacturing methods of them

An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.

Electron-emitting device, electron source, image display apparatus, and their manufacturing method

In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

Electron-emitting device, electron source using the same, image display apparatus, and information displaying and reproducing apparatus

An electron-emitting device is provided with improved electron emitting efficiency. An electron-emitting device includes first and second electroconductive films disposed (21a, 21b) on a surface of a substrate in opposition to each other to form a gap (8) between ends of the first and second electroconductive films. The end of the first electroconductive film includes a portion (A) the minimum distance d1 from which to the second electroconductive film (B) is 10 nm or less. Let d2 denote a minimum distance between the end of the first electroconductive film which is away from the portion the minimum distance d1 from which to the second electroconductive film is 10 nm or less by the minimum distance d1 and the end of the second electroconductive film. The relation of d2/d1≥ 1.2 is satisfied.

Electron emitting device, driving method of electron emitting device, display, and driving method of display

基板（１２）上に形成された電界印加部（１４）と、該電界印加部（１４）の一方の面に形成されたカソード電極（１６）と、電界印加部（１４）の同じく一方の面に形成され、カソード電極（１６）と共にスリット（１８）を形成するアノード電極（２０）とを有する。電界印加部（１４）は誘電体にて構成される。カソード電極（１６）及びアノード電極（２０）間に印加されるパルス信号（Ｓｐ）を、ＣＰＵなどの制御部（４０）から供給された制御信号（Ｓｃ）に基づいて変調して、少なくとも放出電子の量を制御する変調回路（４２）を有する。 An electric field application part (14) formed on the substrate (12), a cathode electrode (16) formed on one surface of the electric field application part (14), and the same one surface of the electric field application part (14) And an anode electrode (20) that forms a slit (18) together with the cathode electrode (16). The electric field applying unit (14) is composed of a dielectric. The pulse signal (Sp) applied between the cathode electrode (16) and the anode electrode (20) is modulated based on a control signal (Sc) supplied from a control unit (40) such as a CPU, and at least emitted electrons. A modulation circuit (42) for controlling the amount of.

Image display device

提供一种图像显示装置，具有：电子源；备有阳极电极和荧光体且因从电子源发射的电子的照射而进行发光显示的靶；以及设置在电子源和靶的中间位置的中间电极，其中，将施加到阳极电极上的电位更高的电位施加到中间电极上。由此，减少因后方散射电子再撞入荧光体而产生的光晕。

Electron-emitting device, electron source substrate, electron source, display panel and image-forming apparatus, and production method thereof

A method of producing an electron-emitting device includes the steps of forming a pair of electrodes and an electrically-conductive thin film on a substrate in such a manner that the pair of electrodes are in contact with the electrically-conductive thin film and forming an electron emission region using the electrically-conductive thin film, wherein the method is characterized in that a solution containing a metal element is supplied in a droplet form onto the substrate thereby forming the electrically-conductive thin film.

Electron emitting device

Emitter with dielectric layer having implanted conducting centers

An emitter has a dielectric layer formed on a conductor, with a thin metal layer over the dielectric. A plurality of conducting centers is in the dielectric layer to allow electrons to pass through the dielectric from the conductor to the thin metal layer via quantum tunneling.

Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same

An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5nm and a spot diameter of 1µm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580cm⁻¹ is greater than a peak (P1) located in the vicinity of 1,335cm⁻¹ or 2) the half-width of a peak (P1) located in the vicinity of 1,335cm⁻¹ is not greater than 150cm⁻¹.

Electron emitting device, image display device, and manufacturing method thereof

Electron beam generator, image forming apparatus using the same, and method of manufacturing electron beam generator

Electron-emitting device, and electron beam lithography machine and image display apparatus making use of it

An electron-emitting device comprises a substrate, an electrode provided on said substrate, an insulating layer laminated on the electrode, and a second electrode having an opening and laminated on the insulating layer in such a manner that the insulating layer is uncovered at the opening and electrons are emitted from the opening of the second electrode as a result of application of an voltage between the electrodes. An image display apparatus comprises the electron-emitting device, a modulating electrode capable of modulating an electron beam emitted from the electron-emitting device, in accordance with an information signal, and an image forming member capable of forming an image as a result of irradiation with the electron beam, these of which are successively disposed. An image forming apparatus comprises the electron-emitting device, and a means for modulating an electron beam emitted from said electron-emitting device, in accordance with an information signal.

Planar electron emitter (pee)

A planar electron emitter, based on the existence of quasi-ballistic transpo rt of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness ( 1mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field ( 100V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature , that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

Electron source device and display

一种电子源装置，包含由绝缘体构成、具有配置在与主面垂直方向的多个微细孔的多孔层(例如，多孔氧化铝层)；以及配置在该多孔层的两侧的第1和第2导电层，将第2导电层作为阳极、在和第1导电层之间加上直流电压时的电流密度I/S在1μA/cm 2 以上。式中，S表示第1导电层和第2导电层以及多孔层的重叠部分的面积。由于可以获得一种高电子发射能力、廉价且即使在低真空度下也具有长寿命的电子源装置，因此能实现高发光效率、高可靠性的显示装置。

Display apparatus

디스플레이 장치를 개시한다. 본 발명은 제 1 기판과, 제 1 기판과 대향되게 배치된 제 2 기판과, 제 1 기판과 제 2 기판내에 배치된 방전 전극들과, 방전 전극들상에 형성되어서, 이들에 인가되는 방전 전압에 의하여 발생되는 전계에 의하여 전자빔을 방전 셀로 방출시키는 전계 방출 소자와, 방전 셀내에 도포된 발광체층과, 방전 셀내에 채워진 방전 가스;를 포함하는 것으로서, 유지 방전 전극쌍위에 전도성 입자를 분산시킨 전계 방출 소자를 형성함으로써, 유지 방전 전압이 인가시에 발생되는 전계에 의하여 방전 공간에 전자를 효율적으로 공급하게 되어서, 방전 전압을 낮출 수가 있고, 발광 효율을 향상시킬 수가 있다. Disclosed is a display device. The present invention is formed on a first substrate, a second substrate disposed to face the first substrate, discharge electrodes disposed in the first substrate and the second substrate, and discharge voltages applied to them. An electric field in which conductive particles are dispersed on a pair of sustain discharge electrodes, comprising a field emission device for emitting an electron beam to a discharge cell by an electric field generated by the discharge cell, a light emitting layer coated in the discharge cell, and a discharge gas filled in the discharge cell; By forming the emission element, electrons are efficiently supplied to the discharge space by the electric field generated when the sustain discharge voltage is applied, so that the discharge voltage can be lowered and the luminous efficiency can be improved.

Emission layer formed by rapid thermal formation process

An emitter has a rapid thermal process (RTP) formed emission layer of SiO 2 , SiO x N y or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.

A thin film type electron emitting device having a multilayered upper electrode for suppressing deterioration of an insulating layer and an application

절연층의 열화를 억제하는 다층 상부전극을 갖는 박막형 전자방출장치 및 이것을 사용한 응용기기에 관한 것으로서, 전자방출원 모듈에서 기본적인 적층으로 사용할 수 있는 새롭고 또한 개량된 다층구조를 제공하고 절연층의 열화를 억제 또는 제거할 수 있는 개량된 박막형 전자방출장치 및 이것을 사용한 전자응용기기를 제공하기 위해서, 상부전극 및 하부전극과 그들 사이에 끼인 절연층을 구비하는 다층 박막형 구조를 포함하며, 상부전극 및 하부전극이 상부전극에 대한 극성의 전압을 수신해서 상부전극의 표면으로부터 진공중으로 전자를 방출시키고, 상부전극이 절연층상에 형성된 제1 층과 제1 층상에 적층된 제2 층으로 이루어진 2층 구조를 갖고, 제1 층이 제2 층보다 승화엔탈피가 높은 선택된 재료로 이루어지는 구성으로 하였다. The present invention relates to a thin film type electron emitting device having a multilayered upper electrode for suppressing deterioration of an insulating layer and an application device using the thin film type electron emitting device. Type thin film type electron emitting device capable of suppressing or eliminating an electric field and an electronic application device using the thin film type electron emitting device and an upper electrode and a lower electrode and an insulating layer sandwiched therebetween, Layer structure composed of a first layer on which an upper electrode is formed on an insulating layer and a second layer which is laminated on the first layer, , And the first layer is made of a selected material having a higher sublimation enthalpy than the second layer. 이러한 구성에 의해서, 장시간 동작시켜도 열화가 발생하지 않고 높은 방출전류밀도를 안정하게 얻을 수 있는 박막형 전자방출기를 실현할 수 있고, 또 이 박막형 전자방출기를 사용하여 표시장치나 EB묘화장치를 구성하는 것에 의해 장수명이고 또한 고휘도의 화상표시장치나 고속의 EB 묘화장치를 실현할 수 있다는 효과가 얻어진다. With such a configuration, it is possible to realize a thin film type electron emitter which can stably obtain a high emission current density without causing deterioration even when it is operated for a long period of time. By using the thin film type electron emitter to constitute a display device or an EB imaging device It is possible to realize an image display apparatus of high luminance and a high-speed EB drawing apparatus with a long life.

Process for producing electron emission device

A process for producing an electron emission device having voltage controlled negative resistance (VCNR) characteristics. A conductive thin film containing fine particles of a metal, metal oxide, semiconductor or the like is formed on a substrate between opposing electrodes which are also form on the substrate. A voltage is applied across the conductive thin film to generate heat with which the conductive thin film is heat treated to have an island structure which is formed of a spatially discontinuous film of fine particles and which serves as an electron emitting region.

Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same

本发明提供一种制造电子发射器件的方法，电子发射器件包括一对电极和位于电极之间并含有电子发射区的导电薄膜，其特征在于包括对含有间隙的导电薄膜在含有一种或一种以上有机物以及具有由通式XY(其中X和Y分别表示氢原子和卤素原子)表示的成分的气体的环境中施加电压的步骤。

Fabrication method of triode diamond field emission array on glass plate by using acf bonding and apparatus made by using the method

본 발명은 3극 구조의 다이아몬드 전계 방출 어레이(diamond field emission array, DFEA)를 유리 기판 상에 형성하기 위한 방법 및 이를 이용한 장치에 관한 것으로, 실리콘 기판상에 몰드(mold) 형태로 형성된 다이아몬드 전계 방출 소자 어레이(field emitter array, FEA)를 전극 라인이 형성되어 있는 유리 기판상에 이방성 전도필름(anisotropic conductive film, 이하 ACF라 함.)을 이용하여 균일 접착하는 것을 특징으로 한다. 상기 방법을 이용한 장치로서는 평판형 냉음극 램프(flat cold cathod lamp)와, VFD(Vacuum fluorescent lamp)의 전자 방출원, 전계 방출 디스플레이(FED)와 같은 평판 디스플레이등이 가능하다. 이중 전계 방출 디스플레이에 적용한 경우를 일 실시예로 하면 ACF 자체의 이방성 특성에 의해 각 패터닝된 전극 라인들 간에 독립적인 어드레싱(addressing)이 가능한 다이아몬드 전계 방출 디스플레이(이하 DFED라 함) 제작이 가능하다. 또한 ACF를 이용한 본딩(bonding)에 의해 한 장의 대형 유리기판 상에 여러 장의 소형 FEA 기판들을 타일링(tiling) 식으로 연결함으로써 대형 디스플레이를 용이하게 구현할 수 있다. 본 발명에 의한 다이아몬드 전계방출 어레이(DFEA : Diamond Field Emission Array)의 세부적인 제조 공정은 다음과 같다. 실리콘 웨이퍼상에 습식 식각법으로 역 피라미드 구조의 몰드를 형성한 후,상기 몰드상에 산화 공정을 통해 게이트 절연막을 형성하고, 상기 게이트 절연막상에 다이아몬드 혹은 다이아몬드 카본막(diamond like carbon, DLC)을 증착시키고, 상기 다이아몬드막 위에 몰리브데늄(Mo)과 같은 전극 물질을 형성하여 피라미드 구조의 다이아몬드 팁을 형성시킨다. 다음으로 실리콘 기판의 몰리브데늄이 형성된 면을 유리기판상에 ITO막이나 금속막으로 패터닝된 면과 마주보도록 ACF를 사용하여 정렬시킨 뒤, 약 200°C 의 온도에서 압력을 가해 완전히 압착시킨다. 이와 같은 압착 공정으로 인해 ACF내의 전도성을 띠는 물질(conductive ball)을 통하여 DFEA 캐소드 라인들이 유리기판상의 ITO 라인들과 전기적으로 연결되지만 각 전극 라인들간에는 전기적인 고립(isolation)이 저절로 형성된다. 이후 수산화칼륨(KOH) 용액과 에틸렌다이아민 파이로카테촐 (EDP) 용액을 이용하여 DFEA의 몰드를 형성하고 있던 실리콘(Si) 기판을 선택적으로 완전히 제거시킨 다음, 표면에 남은 실리콘 산화막(게이트 절연막 부분) 위에 금속막을 증착시킨 후 에치백 프로세스(etchback process)를 이용하여 원하는 3극 구조의 다이아몬드 전계 방출 어레이를 완성한다.

Material for forming electroconductive film, method of forming electroconductive film by using the same and use

一种用于在衬底上形成导电薄膜的材料由金属和疏水及亲水成分组成。最好是，该材料包括由通式(R 1 COO) n M(NR 2 R 3 R 4 )表示的金属有机复合物，其中R 1 代表烷基，R 2 、R 3 和R 4 的每个代表氢原子、烷基或链烯基团，M代表金属元素，n和m中的每个都代表等于或大于1的整数。该材料可以用于制成电子发射器件的导电膜或制成液晶校正膜。

Electron beam image display device and deflection method for electron beam image display device