Elelctron emitter and electron emission element

The present disclosure provides an electron emitter. The electron emitter includes a carbon nanotube pipe. One end of the carbon nanotube pipe has a plurality of carbon nanotube peaks. The present disclosure also provides an electron emission element. The electron emission element comprises a conductive base and a carbon nanotube pipe. The carbon nanotube pipe includes a first end electrically connected with the conductive base and a second end opposite to the first end. The second end defines an opening and includes a plurality of tapered carbon nanotube bundles located around the opening.

Method for making elelctron emitter

The present disclosure provides a method for making electron emitter includes the following steps. First, a linear support is provided. Second, at least one carbon nanotube film or at least one carbon nanotube wire is provided. Third, the at least one carbon nanotube film or wire is wrapped around the linear support. Fourth, the linear support is removed to obtain a carbon nanotube hollow cylinder. Fifth, the carbon nanotube hollow cylinder is fused.

Carbon Nanotube Ink

Carbon nanotube inkjet solutions and methods for jetting are described.

Vacuum ionization gauge

A vacuum ionization gauge includes a cold cathode, a shield electrode, an anode ring, and a collector. The shield electrode includes a receiving space. The anode ring is located in the receiving space of the shield electrode. The cold cathode includes a field emission unit and a grid electrode corresponding to the field emission unit. The field emission unit includes at least one emitter. Each of the at least one emitter includes a carbon nanotube pipe. The carbon nanotube pipe has a first end, a second end, and a main body connecting to the first end and the second end. The second end has a plurality of carbon nanotube peaks.

Electron emitting body and x-ray emitting device

Provided are an electron emitting body having a high electron beam density and an X-ray emitting device embedding the electron emitting body. The electron emitting body has a substrate, the surface of which forms a concave surface, and a carbon film comprising a large number of projections made of carbon and expanded two-dimensionally. The carbon crystal grows such that first a swell portion ( 22 ) gradually becomes larger and then a needle-like portion ( 23 ) grows from the head of the swell portion ( 22 ). The needle-like portion ( 23 ) has a graphene sheet obliquely wound therearound in a multi-layer fashion and has a hollow inside. The axis of a carbon projection ( 21 ) thus formed is substantially orthogonal to a line tangent to the concave surface ( 11 ), so that the axes of a plurality of the carbon projections ( 21 ) intersect with each other at the focal point (F) of the concave surface ( 11 ).

Low voltage electron source with self aligned gate apertures, fabrication method thereof, and x-ray generator using the electron source

An x-ray generating device includes at least a nano-structure based field emission electron source having a self-aligned gate aperture incorporated on a substrate. The device further includes at least an anode target. Associated fabrication method is also described.

Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices

The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Method for making cathode slurry

A method for making cathode slurry is provided and includes the following steps. First, a number of electron emitters, an inorganic binder, and an organic carrier are provided. Second, the electron emitters, the inorganic binder, and the organic carrier are mixed to obtain a mixture. Third, the mixture is mechanically pressed and sheared.

Particle sources and methods for manufacturing the same

The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

Conductive nanostructure, method for molding same, and method for manufacturing a field emitter using same

The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.

Field emission device

A field emission device is configured as a heat engine.

Field emission cathode

The present invention relates to afield emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

Carbon nanotube field emission devices and methods of making same

Devices and methods are described for a cathode having a plurality of apertures in an insulating layer, pits in a substrate layer, and emitters in the pit. The device can also have gate layer on top of the insulating layer which has an opening that is substantially aligned with the pit and the aperture. The emitter can be an array of substantially aligned carbon nanotubes. The device and method produces cathodes that are designed to avoid shorting of the cathode due to emitter-gate contact and other fabrication challenges.

Field emission display and fabrication method thereof

A field emission display (FED) and a fabrication method thereof are disclosed. A lower plate of the FED includes: a cathode electrode formed on the substrate; a diffusion blocking layer formed on the cathode electrode; a seed metal layer formed on the diffusion blocking layer; carbon nano-tubes (CNTs) grown as single crystals from the grains of the seed metal layer; a gate insulating layer formed on the substrate on which the cathode electrode, the diffusion blocking layer, and the seed metal layer are formed, in order to cover the CNTs; and a gate electrode formed on the gate insulating layer.

Electron emission source, electric device using the same, and method of manufacturing the electron emission source

Provided are an electron emission source, a display apparatus using the same, an electronic device, and a method of manufacturing the display apparatus. The electron emission source includes a substrate, a cathode separately manufactured from the substrate, and a needle-shaped electron emission material layer, e.g., carbon nanotube (CNT) layer, fixed to the cathode by an adhesive layer. The CNT layer is formed by a suspension filtering method, and electron emission density is increased by a subsequent taping process on the electron emission material layer.

Field emission device

A field emission device is configured as a heat engine.

HIGH BRIGHTNESS BORON-CONTAINING ELECTRON BEAM EMITTERS FOR USE IN A VACUUM ENVIRONMENT

An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 μm or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 μm or less. 1. An apparatus comprising:an emitter containing a metal boride material, wherein the emitter includes a frustoconical section with an at least partly rounded tip that is in the shape of a truncated sphere, and wherein the at least partly rounded tip has a radius to a curved outer surface of 1 μm or less.2. The apparatus of claim 1 , wherein the metal boride material includes a species selected from the list consisting of an alkali metal claim 1 , an alkaline earth metal claim 1 , a transition metal claim 1 , a lanthanide claim 1 , and an actinide.3. The apparatus of claim 1 , wherein the metal boride material is a metal hexaboride material.4. The apparatus of claim 1 , wherein the metal boride material includes LaB.5. The apparatus of claim 1 , wherein the emitter has an emitting area of less than 1 mm.6. The apparatus of claim 1 , wherein the metal boride material has a <100> crystal orientation.7. The apparatus of claim 1 , wherein the radius is 700 nm or less.8. The apparatus of claim 1 , wherein the radius is 450 nm or less.9. The apparatus of claim 1 , wherein the radius is 100 nm or less.10. The apparatus of claim 1 , wherein the at least partly rounded tip includes a flat emitting facet.11. The apparatus of claim 1 , wherein the emitter has an emitting area less than 1 μm.12. A method comprising:providing an emitter containing a metal boride material, wherein the emitter includes a frustoconical section with an at least partly rounded tip that is in the shape of a truncated sphere, and wherein the at least partly rounded tip has a radius to a curved outer surface of 1 μm or less; ...

FIELD EMISSION-TYPE TOMOSYNTHESIS SYSTEM, EMITTER FOR FIELD EMISSION-TYPE TOMOSYNTHESIS SYSTEM, AND METHOD OF MANUFACTURING EMITTER

Disclosed is a field emission-type tomosynthesis system including a vacuum body having a space therein; a plurality of sources provided inside the body, wherein each of the sources emits a plurality of electrons; and a plurality of anodes disposed inside the body to face the sources and responsible for emitting a plurality of X-rays, wherein each of the anodes faces a corresponding source among the sources, and the electrons collide with each of the anodes to generate X-rays, wherein the X-ray emission angle of each of the anodes is capable of being independently adjusted so as to focus the X-rays emitted toward an object located outside the body. With this configuration, a plurality of X-rays is focused on an object and is emitted to the object to obtain information, and the information is synthesized, thereby improving the reliability of information about the object. 1. A field emission-type tomosynthesis system , comprising:a vacuum body having a space therein;a plurality of sources provided inside the body, wherein each of the sources generates and emits a plurality of electrons; andanodes arranged to face the sources inside the body, wherein the electrons collide with each of the anodes to generate a plurality of X-rays,wherein an X-ray emission angle of each of the anodes is capable of being independently adjusted so as to focus the X-rays emitted toward an object located outside the body.2. The X-ray source system according to claim 1 , wherein each of the sources comprises carbon nanotubes (CNTs) and generates the electrons claim 1 , andinformation of the object photographed by the X-rays is capable of being synthesized.3. The field emission-type tomosynthesis system according to claim 1 , wherein the sources are provided in plural and are arranged in a row so as to be placed side by side with each other claim 1 , andthe anodes are disposed to correspond to the sources and are arranged in a row so as to be placed side by side with each other.4. The field ...

ELECTRON EMITTING DEVICE USING GRAPHITE ADHESIVE MATERIAL AND MANUFACTURING METHOD FOR THE SAME

The present disclosure relates to a manufacturing method for an electron emitting device using a graphite adhesive material. A method of preparing paste for forming a cathode of an electron emitting device includes: mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent; drying a mixed solution in which the nanomaterial and the graphite filler are mixed; and preparing paste by mixing a graphite binder with the dried mixture. 1. A method of preparing paste for forming a cathode of an electron emitting device , comprising:mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent;drying a mixed solution in which the nanomaterial and the graphite filler are mixed; andpreparing paste by mixing a graphite binder with the dried mixture.2. The method of preparing paste of claim 1 ,{'sub': '2', 'wherein the nanomaterial for electron emission is any one of carbon nanotube (CNT), graphene, boron-nitride (BN), molybdenum disulphide (MoS) and nanowire.'}3. The method of preparing paste of claim 1 ,wherein the solvent is any one organic solvent of ethanol, isopropyl alcohol (IPA), dichlorobenzene (1,2-dichlorobenzene) (DCB), dicholoroethane (1,2-dicholoroethane) (DCE), and N-methylpyrrolidone (1-methyl-2-pyrrolidone) (NMP).4. The method of preparing paste of claim 1 ,wherein the solvent is an aqueous solution in which any one of sodium dodecyl sulfate (SDS) and sodium dodecyl benzene sulfonate (SDBS) is mixed.5. The method of preparing paste of claim 1 ,wherein the dispersing includes performing sonication.6. The method of preparing paste of claim 1 ,wherein the preparing of paste includes mixing the dried mixture and the binder through a ball milling process.7. A method of manufacturing a cathode of an electron emitting device claim 1 , comprising:mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent;drying a mixed solution in which the nanomaterial and the graphite ...

VACUUM ELECTRON TUBE WITH PLANAR CATHODE BASED ON NANOTUBES OR NANOWIRES

A vacuum electron tube comprises at least one electron-emitting cathode and at least one anode arranged in a vacuum chamber, the cathode having a planar structure comprising a substrate comprising a conductive material, a plurality of nanotube or nanowire elements electrically insulated from the substrate, the longitudinal axis of the nanotube or nanowire elements substantially parallel to the plane of the substrate, and at least one first connector electrically linked to at least one nanotube or nanowire element so as to be able to apply a first electrical potential to the nanowire or nanotube element. 1. A vacuum electron tube comprising at least one electron-emitting cathode and at least one anode arranged in a vacuum chamber ,the cathode having a planar structure comprising a substrate comprising a conductive material, a plurality of nanotube or nanowire elements electrically insulated from the substrate, the longitudinal axis of said nanotube or nanowire elements being substantially parallel to the plane of the substrate, and at least one first connector electrically linked to at least one nanotube or nanowire element so as to be able to apply a first electrical potential to the nanowire or nanotube element.2. The vacuum electron tube according to claim 1 , wherein the nanotube or nanowire elements are substantially parallel to one another.3. The vacuum electron tube according to claim 1 , wherein which the first connector comprises a substantially planar contact element arranged on an insulating layer and linked to a first end of said nanotube or nanowire element.4. The vacuum electron tube according to claim 1 , wherein the cathode further comprises a first control means linked to the first connector and to the substrate claim 1 , and configured to apply a bias voltage between the substrate and the nanotube element so that the nanotube or nanowire element emits electrons through its surface by tunnel effect.5. The vacuum electron tube according to claim 4 , ...

CARBON NANOTUBE FIELD EMITTER AND PREPARATION METHOD THEREOF

A method for making a carbon nanotube field emitter is provided. A carbon nanotube film is dealed with a carbon nanotube film in a circumstance with a temperature ranged from 1400 to 1800° C. and a pressure ranged from 40 to 60 MPa to form at least one first carbon nanotube structure. The at least one first carbon nanotube structure is heated to graphitize the at least one first carbon nanotube structure to form at least one second carbon nanotube structure. At least two electrodes is welded to fix one end of the at least one second carbon nanotube structure between adjacent two electrodes to form a field emission preparation body. The field emission preparation body has a emission end. The emission end is bonded to form a carbon nanotube field emitter. 1. A method for making a carbon nanotube field emitter , comprising:{'b': '1', 'S: handling a carbon nanotube film in an environment of a temperature ranged from 1400 to 1800° C. and a pressure ranged from 40 to 60 MPa to form at least one first carbon nanotube structure;'}{'b': '2', 'S: heating the at least one first carbon nanotube structure to graphitize the first carbon nanotube structure thereby forming at least one second carbon nanotube structure;'}{'b': '3', 'S: welding at least two electrodes to fix one end of the at least one second carbon nanotube structure between the at least two electrodes to form a field emission preparation body, wherein the field emission preparation body comprises an emission end; and'}{'b': '4', 'S: bonding the emission end of the field emission preparation to form a carbon nanotube field emitter.'}2. The method of claim 1 , wherein the at least one second carbon nanotube structure comprises a first end and a second end claim 1 , the first end is opposite to the second end claim 1 , and the first end of the at least one second carbon nanotube structure is fixed between the at least two electrodes by a spot welding method or a laser welding method.3. The method of claim 2 , wherein ...

PASSIVE AND ACTIVE DIAMOND-BASED ELECTRON EMITTERS AND IONIZERS

A triple-point cathode coating and method wherein electrically conductive NEA diamond particles cast or mixed with the adhesive medium and electrically insulative NEA diamond particles are cast or mixed with the adhesive medium to form a plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating. 1. A triple-point cathode coating comprising:an electrically conductive adhesive medium;electrically conductive NEA diamond particles cast or mixed with the adhesive medium;electrically insulative NEA diamond particles cast or mixed with the adhesive medium; anda plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating.2. The coating of in which the electrically conductive NEA diamond particles contact electrically insulative NEA diamond particles at locations not submerged in the adhesive medium.3. The coating of in which the electrically conductive NEA diamond particles and the electrically insulative particles have a grit size of between 0.5 microns to 150 microns.4. The coating of in which the electrically conductive NEA diamond particles and the electrically insulative diamond particles are mixed together before casting or mixing them with the adhesive medium.5. The coating of in which the adhesive medium includes silver.6. An ionizer comprising:a substrate; an electrically conductive adhesive medium,', 'electrically conductive NEA diamond particles cast or mixed with the adhesive medium,', 'electrically insulative NEA diamond particles cast or mixed with the adhesive medium, and', 'a plurality of exposed junctions between electrically conductive diamond particles and electrically insulating diamond particles to reduce any electrical charges on the substrate., 'a triple-point cathode coating ...

DEVICE FOR IMAGING 1-D NANOMATERIALS

A device for imaging one dimension nanomaterials is provided. The device includes an optical microscope with a liquid immersion objective, a laser device, and a spectrometer. The laser device is configured to provide an incident light beam with a continuous spectrum. The spectrometer is configured to obtain spectral information of the one dimensional nanomaterials. 1. A device for imaging one dimensional nanomaterials , comprising:an optical microscope with a liquid immersion objective;a laser device configured to provide an incident light beam with a continuous spectrum; anda spectrometer configured to obtain spectral information of the one dimensional nanomaterials.2. The device of claim 1 , further comprising a container comprising a side wall and a bottom wall claim 1 , the side wall and the bottom wall together define a chamber for containing the one dimensional nanomaterials and a liquid.3. The device of claim 2 , wherein an angle between the side wall and the bottom wall is in a range from 45 degrees to 90 degrees.4. The device of claim 3 , wherein the angle between the side wall and the bottom wall is 75 degrees.5. The device of claim 2 , wherein the incident light beam emitted from the laser device is perpendicular to the side wall.6. The device of claim 2 , wherein the side wall comprises a planar quartz window.7. The device of claim 2 , wherein the one dimensional nanomaterials is located on the bottom wall.8. The device of claim 1 , wherein the device further comprises a filter configured to filter out infrared light of the incident light beam claim 1 , and the filter is located in an optical path of the incident light beam.9. The device of claim 1 , further comprising a focusing lens configured to increase intensity of the incident light beam claim 1 , and the focusing lens is located in an optical path of the incident light beam.10. The device of claim 1 , further comprising a camera connected to the optical microscope.11. The device of claim 1 , ...

Diamond Semiconductor Device

An electrical device comprising a substrate of diamond material and elongate metal protrusions extending into respective recesses in the substrate. Doped semiconductor layers, arranged between respective protrusions and the substrate, behave as n type semiconducting material on application of an electric field, between the protrusions and the substrate, suitable to cause a regions of positive space charge within the semiconductor layers. 1. An electrical device comprising:a substrate of diamond material;at least one elongate first electrically conductive portion extending into a respective recess in said substrate; andat least one doped semiconducting region, arranged between at least one respective said first electrically conductive portion and said substrate, and adapted to behave as an n type semiconducting material on application of an electric field, between said first electrically conductive portion and said substrate, suitable to cause a region of positive space charge within the semiconducting region,wherein at least one recess further comprises at least one inclined distal surface defining a point, wherein at least one doped semiconducting region is arranged on a respective inclined distal surface.2. The device of claim 1 , wherein at least one said semiconducting region includes diamond.3. The device of claim 1 , wherein at least one said semiconducting region includes at least one donor dopant to impart an n-type semiconducting characteristic to said region.4. The device of claim 3 , wherein at least one said semiconducting region includes a plurality of dopant materials to impart an n-type semiconducting characteristic to said region.5. The device of according to claim 3 , wherein at least one said dopant is a group I element.6. The device of claim 3 , wherein at least one said dopant is a group V element.7. The device of claim 3 , wherein at least one said dopant is a group VI element.8. The device of claim 1 , wherein at least one said first ...

FIELD EMISSION APPARATUS WITH SUPERIOR STRUCTURAL STABILITY AND X-RAY TUBE COMPRISING THE SAME

Provided is a field emission apparatus including a pipe-shaped emitter holder comprising an electrically conductive material and a first internal space communicated in a first direction, and an emitter electrode having one or more yarns each having a structure extending in the first direction in which a plurality of CNTs that extend in the first direction are aggregated, and the emitter electrode is inserted in the first internal space while extending in the first direction. 1. A field emission apparatus , comprising:a pipe-shaped emitter holder comprising an electrically conductive material and a first internal space communicated in a first direction; andan emitter electrode comprising one or more yarns each having a structure extending in the first direction in which a plurality of carbon nanotubes (CNTs) that extend in the first direction are aggregated,wherein the emitter electrode is inserted in the first internal space of the emitter holder while extending along the first direction.2. The field emission apparatus of claim 1 , wherein the emitter electrode is inserted in the first internal space with at least a part thereof electrically in contact with an inner surface of the emitter holder claim 1 , so that electric currents flow between the emitter holder and the emitter electrode.3. The field emission apparatus of claim 1 , wherein:the emitter holder comprises a band-shaped first front end, a band-shaped first base end, an inner surface extending in the first direction between an inner periphery of the first front end and an inner periphery of the first base end and defining the first internal space, and an outer surface extending in the first direction between an outer periphery of the first front end and an outer periphery of the first base end,the first internal space extends in the first direction from the first front end to the first base end, andthe emitter electrode comprises a second front end and a second base end.4. The field emission apparatus of ...

Large scale stable field emitter for high current applications

The present invention relates to large area field emission devices based on the incorporation of macroscopic, microscopic, and nanoscopic field enhancement features and a designed forced current sharing matrix layer to enable a stable high-current density long-life field emission device. The present invention pertains to a wide range of field emission sources and is not limited to a specific field emission technology. The invention is described as an X-ray electron source but can be applied to any application requiring a high current density electron source.

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY INCLUDING THE ELECTRODE, FIELD EMISSION DEVICE INCLUDING THE COMPOSITE, BIOSENSOR INCLUDING THE COMPOSITE, SEMICONDUCTOR DEVICE INCLUDING THE COMPOSITE, AND THERMOELECTRIC DEVICE INCLUDING THE COMPOSITE

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0 Подробнее

Electron Source

An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped. 1. An electron source comprising:a silicon substrate having a top surface;at least one field emitter formed directly on the top surface of the silicon substrate, wherein the field emitter comprises one of a pyramid, a cone, or a rounded whisker; anda boron layer hermetically disposed on the field emitter, wherein the boron layer is greater than 75% boron, and wherein the boron layer covers the field emitter from the silicon substrate to a tip of the field emitter.2. The electron source of claim 1 , wherein the boron layer comprises less than 10% oxygen near an interface between the boron layer and the silicon substrate.3. The electron source of claim 1 , wherein the tip of the field emitter has a lateral dimension less than 100 nm.4. The electron source of claim 3 , wherein the tip of the field emitter has a lateral dimension greater than 20 nm.5. The electron source of claim 1 , wherein the tip of the field emitter has a diameter less than 100 nm.6. The electron source of claim 1 , further comprising an electrode held at a positive voltage of less than 500 V relative to the field emitter at a distance of 2 μm or less from an apex of the field emitter.7. ...

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY INCLUDING THE ELECTRODE, FIELD EMISSION DEVICE INCLUDING THE COMPOSITE, BIOSENSOR INCLUDING THE COMPOSITE, SEMICONDUCTOR DEVICE INCLUDING THE COMPOSITE, AND THERMOELECTRIC DEVICE INCLUDING THE COMPOSITE

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0 Подробнее

FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF

A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer. 1. A field emission device , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; anda gate electrode comprising a graphene sheet covering the opening.2. The field emission device of claim 1 , wherein the gate electrode further comprises an electrode unit around the opening claim 1 , andwherein the graphene sheet is connected to the electrode unit.3. The field emission device of claim 1 , wherein the graphene sheet is a graphene single-layered film or a graphene multi-layered film.4. A field emission device claim 1 , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter; anda gate electrode, supported by the insulating spacer, comprising an electrode unit that defines an opening that is a discharge path of electrons emitted from the emitter, and a tunneling member that covers the opening and passes the electrons therethrough according to a tunneling effect.5. ...

FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING EMITTERS THEREOF

A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening. 1. A field emission device , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; anda gate electrode around the opening;wherein the electron emission source comprises a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.2. The field emission device of claim 1 , wherein each of the plurality of graphene thin films comprises:a first portion buried in the cathode electrode; anda second portion that extends from the first portion and is exposed from the cathode electrode.3. The field emission device of claim 1 , wherein the cathode electrode has a pointed shape toward the opening claim 1 , andwherein the plurality of graphene thin films are in a pointed structure toward the opening.4. The field emission device of claim 1 , wherein each of the plurality of graphene thin films is a graphene single-layered film.5. The field emission device of claim 1 , wherein each of the plurality of graphene thin films is a graphene multi-layered film.6. A field emission device claim 1 , comprising:a body comprising a cavity and an opening allowing the cavity to communicate with an outside of the body;a cathode electrode in the cavity, wherein a plurality of graphene thin films are vertically toward the opening at a position in the cavity ...

Method and device for imaging 1-d nanomaterials

A method for imaging one dimension nanomaterials is provided. Firstly, one dimension nanomaterials sample, an optical microscope with a liquid immersion objective and a liquid are provided. Secondly, the one dimensional nanomaterials sample is immersed in the liquid. Thirdly, the one dimensional nanomaterials sample is illuminated by an incident beam to generate resonance Rayleigh scattering. Forthly, the liquid immersion objective is immersed into the liquid to get a resonance Rayleigh scattering (RRS) image of the one dimensional nanomaterials sample. Fifthly, spectra of the one dimensional nanomaterials sample are measured to obtain chirality of the one dimensional nanomaterials sample.

METHOD FOR CONTROLLABLY GROWING ZNO NANOWIRES

The present invention relates to a method for controllably growing ZnO nanowires, for example to be used in relation to field emission lighting. In particular, the invention relates to a method of controlling thermal oxidation conditions to achieve steady-state conditions between an oxygen consumption rate by a growing oxide on a surface of a structure and the decomposition rate of the oxygen-carrying species within the chamber. The invention also relates to a corresponding field emission cathode. 1. A method for controllably growing zinc oxide (ZnO) nanowires on a surface of a structure by means of thermal oxidation , the structure comprising a zinc layer covering at least a portion of the structure , the method comprising:arranging the structure within a thermal oxidation chamber, the chamber having a gas inlet and a gas outlet for allowing a gas flow through the chamber;providing a gas comprising an oxygen-carrying precursor through the gas inlet of the chamber; andcontrolling a concentration of oxygen along the surface of the structure by:controlling a temperature within the chamber; andcontrolling a gas flow of the gas comprising the oxygen-carrying precursor through the chamber,such that steady-state conditions are achieved between an oxygen consumption rate by a growing oxide on the surface of the structure and the decomposition rate of the oxygen-carrying species within the chamber, thereby maintaining the same zinc oxidation conditions along the surface of the structure within the chamber.2. The method according to claim 1 , wherein said gas comprises a plurality of oxygen carrying precursors.3. The method according to claim 1 , further comprising controlling a gas pressure to provide substantially uniform growth conditions at the entire surface of the structure claim 1 , at a given time.4. The method according to claim 1 , further comprising controlling the gas flow such that a resulting concentration of oxygen is substantially uniform for the entire ...

COMPACT MEDICAL X-RAY IMAGING APPARATUS

The present invention provides a compact medical X-ray imaging apparatus, which is a portable X-ray imaging apparatus capable of capturing clear X-ray images while maintaining low radiation exposure. The compact medical X-ray imaging apparatus comprises of: a carbon nanostructure triode cold cathode X-ray tube that radiates X-rays; an X-ray image sensor that captures an image of X-rays that pass through a patient; The first detector that detects the X-ray radiation dose and is positioned between the carbon nanostructure triode cold cathode X-ray tube and the X-ray image sensor, while out of the X-ray irradiation area for the imaging sensor; the second detector that detects the X-ray dose and is positioned in the center on one side of the X-ray image sensor frame; the third detector that detects the X-ray dose and is positioned on the other side of the X-ray image sensor frame facing to the second detector with the detection surface of the image sensor in between the second and third detector; a power supply which supplies a negative and a positive high-voltage pulse to the cathode and anode of the carbon nanostructure triode cold cathode X-ray tube respectively; and an X-ray imaging controller which acquires detection data from the first detector, second detector and third detector in addition to the distance from the carbon nanostructure triode cold cathode X-ray tube to the X-ray image sensor, calculates the X-ray radiation dose and amount of decay, determines the optimum X-ray dose for the patient and the voltage of the carbon nanostructure triode cold cathode X-ray tube, controls the pulse number and pulse width of the high-voltage pulse of the carbon nanostructure triode cold cathode X-ray tube, as well as the voltage of the cathode and the anode with feedback control means. 2. The compact medical X-ray imaging device according to claim 1 , whereinbased on detection results of the first detector, the current decrement of the carbon nanostructure triode cold ...

Carbon nanotube electron emitter, method of manufacturing the same and x-ray source using the same

The present disclosure provides a method of manufacturing a carbon nanotube electron emitter, including: forming a carbon nanotube film; performing densification by dipping the carbon nanotube film in a solvent; cutting an area of the carbon nanotube film into a pointed shape or a line shape; and fixing the cutting area of the carbon nanotube film arranged between at least two metal members to face upwards with lateral pressure.

CARBON NANOTUBE FIELD EMITTER AND PREPARATION METHOD THEREOF

A carbon nanotube field emitter comprises at least two electrodes and at least one graphitized carbon nanotube structure. The at least one graphitized carbon nanotube structure comprises a first end and a field emission end. The first end is opposite to the field emission end. The first end is fixed between the at least two electrodes, and the field emission end is exposed from the at least two electrodes and configured to emit electrons. 1. A carbon nanotube field emitter , comprising:at least two electrodes and at least one graphitized carbon nanotube structure, wherein the at least one graphitized carbon nanotube structure comprises a first end and a field emission end, the first end is opposite to the field emission end, the first end is fixed between the at least two electrodes, and the field emission end is exposed from the at least two electrodes and configured to emit electrons.2. The carbon nanotube field emitter of claim 1 , wherein a density of the graphitized carbon nanotube structure is larger than or equal to 1.6 g/m.3. The carbon nanotube field emitter of claim 1 , wherein the field emission end comprises a plurality of protrusions and a plurality of burrs.4. The carbon nanotube field emitter of claim 1 , wherein the graphitized carbon nanotube structure comprises a plurality of carbon nanotube drawn films stacked with each other.5. The carbon nanotube field emitter of claim 4 , wherein an angle between an aligned directions of carbon nanotubes in two adjacent carbon nanotube drawn films ranges from about 0 degrees to about 30 degrees.6. The carbon nanotube field emitter of claim 4 , wherein the angle between an aligned directions of carbon nanotubes in the two adjacent carbon nanotube drawn films is 0 degrees.7. The carbon nanotube field emitter of claim 4 , wherein each carbon nanotube drawn film comprises a plurality of carbon nanotubes claim 4 , and the plurality of carbon nanotubes are arranged parallel to a surface of a carbon nanotube drawn ...

NANOTUBE-NANOHORN COMPLEX AND METHOD OF MANUFACTURING THE SAME

An object of the present invention is to provide a nanotube-nanohorn complex having a high aspect ratio, also having high dispersibility, having controlled diameter, and having high durability at a low cost. According to the present invention, a carbon target containing a catalyst is evaporated with a laser ablation method to synthesize a structure including both of a carbon nanohorn aggregate and a carbon nanotube. 1. A method of manufacturing a nanotube-nanohorn complex , the method comprising evaporating a carbon target containing a catalyst with a laser ablation method to synthesize a structure including both of a carbon nanohorn aggregate and a carbon nanotube.2. A method of manufacturing a nanotube-nanohorn complex , the method comprising evaporating a carbon target containing a catalyst with a laser ablation method to synthesize a structure in which a carbon nanotube grows from the catalyst , which is surrounded by a carbon nanohorn aggregate.3. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the carbon nanohorns comprise one of a dahlia-like form claim 1 , a bud-like form claim 1 , a seed-like form claim 1 , and a petal-like form.4. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the carbon nanotube has a single layer claim 1 , and the carbon nanotube has a diameter of 0.4 nm to 4 nm.5. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the carbon nanotube has two layers claim 1 , and the carbon nanotube has an inside diameter of 0.4 nm to 20 nm and an outside diameter of 0.7 nm to 22 nm.6. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the carbon nanotube has multiple layers claim 1 , and the carbon nanotube has an inside diameter of 0.4 nm to 200 nm and an outside diameter of 0.7 nm to 500 nm.7. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the catalyst of the ...

Ion source with cathode having an array of nano-sized projections

An ion source for use in a particle accelerator includes at least one cathode. The at least one cathode has an array of nano-sized projections and an array of gates adjacent the array of nano-sized projections. The array of nano-sized projections and the array of gates have a first voltage difference such that an electric field in the cathode causes electrons to be emitted from the array of nano-sized projections and accelerated downstream. There is a ion source electrode downstream of the at least one cathode, and the at least one cathode and the ion source electrode have the same voltage applied such that the electrons enter the space encompassed by the ion source electrode, some of the electrons as they travel within the ion source electrode striking an ionizable gas to create ions.

METHOD FOR PREPARING A MOLYBDENUM DISULFIDE FILM USED IN A FIELD EMISSION DEVICE

The present disclosure relates to a method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoOpowder to generate a gaseous MoO; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoSfilm obtained is good. 1. A method for preparing a molybdenum disulfide film used in a field emission device , comprising:providing a sulfur vapor;{'sub': 3', '3', 'x, 'blowing the sulfur vapor into a reaction chamber having a substrate and MoOpowder, so as to make the MoOpowder react with the sulfur vapor to generate a gaseous MoOwhich deposits on the substrate, in which x is 2≦x<3;'}{'sub': 'x', 'feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature, so as to make the sulfur vapor and the MoOform a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically.'}2. The method according to claim 1 , wherein the predetermined reaction temperature ranges from 600° C. to 900° C.3. The method according to claim 1 , wherein the predetermined reaction time ranges from 5 minutes to 30 minutes.4. The method according to claim 1 , wherein the sulfur vapor is obtained by sublimating sulfur powder.5. The method ...

PHOTOCATHODE DESIGNS AND METHODS OF GENERATING AN ELECTRON BEAM USING A PHOTOCATHODE

A photocathode can include a body fabricated of a wide bandgap semiconductor material, a metal layer, and an alkali halide photocathode emitter. The body may have a thickness of less than 100 nm and the alkali halide photocathode may have a thickness less than 10 nm. The photocathode can be illuminated with a dual wavelength scheme. 1. A photocathode comprising:{'b': '100', 'a body fabricated of a wide bandgap semiconductor material, wherein the body has a first surface and a second surface opposite the first surface, and wherein the body has a thickness between the first surface and the second surface of less than nm;'}a metal layer disposed on the first surface; and{'b': '10', 'an alkali halide photocathode emitter disposed on the second surface, wherein the alkali halide photocathode has a thickness less than nm.'}2. The photocathode of claim 1 , wherein the metal layer includes one or more of ruthenium claim 1 , iridium claim 1 , platinum claim 1 , or gold.3. The photocathode of claim 2 , wherein the metal layer includes an alloy of ruthenium and platinum.4. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of InGaN.5. The photocathode of claim 4 , wherein the alloy of InGaN is an alloy of InGaN and GaN.6. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of AlGaN.7. The photocathode of claim 6 , wherein the alloy of AlGaN is an alloy of AlGaN and GaN.8. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of InGaP.9. The photocathode of claim 8 , wherein the alloy of InGaP is an alloy of InGaP and GaP.10. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes at least one of GaN and GaP.11. The photocathode of claim 1 , wherein the alkali halide photocathode includes one or more of CsI claim 1 , CsBr claim 1 , or CsTe.12. The photocathode of claim 1 , further comprising a cap layer disposed on the ...

RUTHENIUM ENCAPSULATED PHOTOCATHODE ELECTRON EMITTER

A photocathode structure, which can include an alkali halide, has a protective film on an exterior surface of the photocathode structure. The protective film includes ruthenium. This protective film can be, for example, ruthenium or an alloy of ruthenium and platinum. The protective film can have a thickness from 1 nm to 20 nm. The photocathode structure can be used in an electron beam tool like a scanning electron microscope. 1. An electron emitter comprising:a photocathode structure; anda protective film disposed on an exterior surface of the photocathode structure, wherein the protective film includes ruthenium.2. The electron emitter of claim 1 , wherein the photocathode structure includes an alkali halide.3. The electron emitter of claim 2 , wherein the alkali halide includes CsBr or CsI.4. The electron emitter of claim 1 , wherein the photocathode includes a ruthenium layer on a side of the photocathode structure opposite from the protective film.5. The electron emitter of claim 1 , wherein the photocathode includes a metal layer on a side of the photocathode structure opposite from the protective film.6. The electron emitter of claim 1 , wherein the protective film includes an alloy of ruthenium and platinum.7. The electron emitter of claim 1 , wherein the protective film has a thickness from 1 nm to 20 nm.8. The electron emitter of claim 1 , wherein the protective film is free of pinholes in at least an emitting area of the photocathode structure.9. The electron emitter of claim 1 , wherein the protective film is free of bubbles and inclusions in at least an emitting area of the photocathode structure.10. The electron emitter of claim 1 , wherein the protective film has imperfections only with a diameter or length dimension less than 1 nm.11. The electron emitter of claim 1 , wherein the protective film has fewer than 10impurities over an emitting area of the photocathode structure.12. The electron emitter of claim 11 , wherein the impurities include carbon ...

Cold field electron emitters based on silicon carbide structures

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm 2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Method for manufacturing nanostructures for a field emission cathode

The present invention relates to the field of field emission lighting, and specifically to a method for forming a field emission cathode. The method comprises arranging a growth substrate in a growth solution comprising a Zn-based growth agent, the growth solution having a pre-defined pH-value at room temperature; increasing the pH value of the growth solution to reach a nucleation phase; upon increasing the pH of the solution nucleation starts. The growth phase is then entered by decreasing the pH. The length of the nanorods is determined by the growth time. The process is terminated by increasing the pH to form sharp tips. The invention also relates to a structure for such a field emission cathode and to a lighting arrangement comprising the field emission cathode. 1. A method for forming a plurality of ZnO nanostructures for a field emission cathode , the method comprising the steps of:providing a growth substrate;providing a growth solution comprising a Zn-based growth agent, said growth solution having a pre-defined initial pH-value at room temperature;arranging said growth substrate in said growth solution;increasing said pH value of said growth solution to reach a nucleation phase forming nucleation sites on said substrate;decreasing said pH value to transition from said nucleation phase to a growth phase;growing said nanostructures for a predetermined growth-time; andincreasing said pH value to transition from said growth phase to a tip-formation phase.2. The method according to claim 1 , wherein said step of increasing said pH value to initiate a nucleation phase comprises heating said growth solution to a first temperature.3. The method according to claim 2 , wherein said step of increasing said pH value to transition from said growth phase to said tip-formation phase comprises decreasing said temperature of said growth solution to a second temperature claim 2 , lower than said first temperature.4. The method according to claim 1 , wherein said predefined ...

Distributed, field emission-based x-ray source for phase contrast imaging

An x-ray source for use in Phase Contrast Imaging is disclosed. In particular, the x-ray source includes a cathode array of individually controlled field-emission electron guns. The field emission guns include very small diameter tips capable of producing a narrow beam of electrons. Beams emitted from the cathode array are accelerated through an acceleration cavity and are directed to a transmission type anode, impinging on the anode to create a small spot size, typically less than five micrometers. The individually controllable electron guns can be selectively activated in patterns, which can be advantageously used in Phase Contrast Imaging.

ELECTRON EMITTER AND METHOD OF FABRICATING SAME

Electron emitters and method of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip. 116.-. (canceled)17. An electron emitter comprising:a tip having a planar region with a diameter in a range of 1 micrometer to <10 micrometers; anda work-function-lowering material coated on the tip.18. The electron emitter of claim 17 , wherein the tip comprises single crystal.19. The electron emitter of claim 18 , wherein the single crystal has a crystal orientation of <100>.20. The electron emitter of claim 18 , wherein the single crystal is one of tungsten claim 18 , molybdenum claim 18 , iridium claim 18 , and rhenium.21. The electron emitter of claim 17 , wherein the tip comprises at least one of a transition-metal-carbide compound or a transition-metal-boride compound claim 17 , wherein the transition-metal-carbide compound is a carbide compound of hafnium claim 17 , zirconium claim 17 , tantalum claim 17 , titanium claim 17 , tungsten claim 17 , molybdenum claim 17 , or niobium claim 17 , and claim 17 , wherein the transition-metal-boride compound is a boride compound of hafnium claim 17 , zirconium claim 17 , tantalum claim 17 , titanium claim 17 , tungsten claim 17 , molybdenum claim 17 , niobium claim 17 , or lanthanum.22. The electron emitter of claim 17 , wherein the work-function-lowering material comprises:at least one of an oxide compound of zirconium, hafnium, titanium, scandium, yttrium, vanadium, lanthanum, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, ytterbium, lutetium, or thorium, orat least one of a nitride compound of zirconium, titanium, niobium, scandium, vanadium, or lanthanum, orat least ...

CATHODE STRUCTURE FOR COLD FIELD ELECTRON EMISSION AND METHOD OF FABRICATING THE SAME

A cathode structure for cold field electron emission and method of fabricating a single-tip cathode structure for cold field electron emission. The cathode structure comprises a pointed cathode wire; and a graphene-based coating on at least a tip of the pointed cathode wire. In a preferred embodiment, graphene is coated on nickel tips by chemical vapour deposition wherein nickel functions as a catalyst for growth of graphene. The cathode structure provides stable cold field emission for electron microscopy and lithography applications and exhibits an ultralow work function value of about 1.1 eV. 1. A cathode structure for cold field electron emission comprising:a pointed cathode wire; anda graphene-based coating on at least a tip of the pointed cathode wire.2. The cathode structure of claim 1 , exhibiting a low work function value of about 1.1 eV.3. The cathode structure of claim 1 , wherein the cathode wire comprises a metal.4. The cathode structure of claim 3 , wherein the metal is in polycrystalline form.5. The cathode structure of claim 3 , wherein the metal comprises one or more of a group consisting of Ni claim 3 , Co claim 3 , Pd claim 3 , Al claim 3 , Cu claim 3 , and Ag.6. The cathode structure of claim 1 , wherein the graphene based coating comprises one or more of a group consisting of graphene claim 1 , graphene oxide (GO) claim 1 , rGO and their derivatives.7. The cathode structure of claim 1 , wherein a radius of the tip is in the range from about 100 to 800 nm.8. The cathode structure of claim 1 , exhibiting a low electric field strength requirement of about 0.5 V/nm.9. A method of fabricating a cathode structure for cold field electron emission claim 1 , the method comprising the steps of:providing a pointed cathode wire; andcoating at least a tip of the pointed cathode wire with a graphene-based material.10. The method of claim 9 , wherein the coating is performed by chemical vapor deposition claim 9 , CVD.11. The method of claim 10 , wherein a ...

Electron source and production method therefor

An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

FERROELECTRIC EMITTER FOR ELECTRON BEAM EMISSION AND RADIATION GENERATION

Disclosed are methods and devices suitable for generating electron beams and pulses of radiation. Specifically, in some disclosed embodiments, multiple emitting electrodes of a ferroelectric emitter are sequentially activated, generating a relatively long electron beam pulse that is substantially a series of substantially consecutive short electron beam pulses generated by the sequentially-activated individual emitting electrodes. 1. A ferroelectric emitter , comprising:at least two mutually-separated distal emitting electrodes.2. The ferroelectric emitter of claim 1 , wherein said emitting electrodes are coplanar.3. The ferroelectric emitter of claim 1 , comprising:an emitter body of ferroelectric material having a proximal face and a distal face;at least one proximal electrode contacting said proximal face of said emitter body; andsaid at least two mutually-separated distal emitting electrodes contacting said distal face of said emitter body.4. The ferroelectric emitter of claim 1 , further comprising:a triggering assembly, configured to sequentially activate said distal emitting electrodes.59-. (canceled)10. An electron gun claim 1 , comprising:a vacuum tube; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'functionally associated with said vacuum tube, a ferroelectric emitter of .'}11. The electron gun of claim 10 , configured for sequential activation of said distal emitting electrodes.12. The electron gun of claim 11 , said sequential activation enabling the generation of a series of substantially consecutive short electron beam pulses claim 11 , each pulse generated by activation of a said distal emitting electrode.1319-. (canceled)20. A radiation-generating device claim 11 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a ferroelectric emitter of .'}2122-. (canceled)23. A method for generating an electron beam claim 11 , comprising:a) providing a ferroelectric emitter having at least two mutually-separated distal emitting electrodes ...

Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. 1. A gas field ion source comprising:an iridium tip comprising a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation, the iridium tip being an emitter which is configured to emit an ion beam;an ion source chamber which accommodates the emitter;a gas supply section which is configured to supply a gas to be ionized, to the ion source chamber;an extraction electrode which is configured to ionize the gas to generate ions of the gas and apply a voltage for extracting the ions of the gas from the emitter; anda temperature control section which is configured to cool the emitter.2. The gas field ion source according to claim 1 ,wherein a main component of the gas is at least any one of hydrogen, nitrogen, oxygen, helium, neon, argon, krypton, and xenon, or a mixture of at least any of these gases.3. The gas field ion source according to claim 1 ,wherein a main component of the gas is nitrogen.4. The gas field ion source according to claim 3 ,wherein a purity of nitrogen which is the main component of the gas is 99% or more.5. A focused ion beam apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the gas field ion source according to ; and'}a control section which is configured to form a focused ion beam with the ions of the gas generated in the gas field ion source and irradiate a sample with the focused ion beam ...

ELECTRON EMISSION SOURCE AND METHOD FOR MAKING THE SAME

An electron emission source is provided. The electron emission source comprises a first electrode, an insulating layer, and a second electrode, The first electrode, the insulating layer, and the second electrode are successively stacked with each other. the second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electron. A thickness of the graphene layer ranges from about 0.1 nanometers to about 50 nanometers. 1. An electron emission source , comprising a first electrode , an insulating layer , and a second electrode successively stacked in a said order , the second electrode is a graphene layer , a thickness of the graphene layer ranges from approximately 0.1 nanometers to approximately 50 nanometers , and the graphene layer defines an electron emission end to emit electrons.2. The electron emission source of claim 1 , wherein the graphene layer comprises at least one graphene film claim 1 , the graphene film consists of a single-layer graphene.3. The electron emission source of claim 1 , wherein the graphene layer consists of a single-layer graphene claim 1 , and the single-layer graphene has a thickness of one single carbon atom.4. The electron emission source of claim 1 , wherein a material of the insulating layer is alumina claim 1 , silicon nitride claim 1 , silicon oxide claim 1 , tantalum oxide claim 1 , or boron nitride.5. The electron emission source of claim 4 , wherein the material of the insulating layer is boron nitride claim 4 , and a thickness of the insulating layer ranges from approximately 0.3 nanometers to approximately 0.6 nanometers.6. The electron emission source of claim 1 , wherein the electron emission source consists of the first electrode claim 1 , a boron nitride layer claim 1 , and the graphene layer successively stacked in the said order.7. A method for making an electron emission source claim 1 , comprising:depositing an insulating layer on a surface of a first electrode, wherein the ...

Electron source and production method therefor

An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

A FIELD EMISSION CATHODE STRUCTURE FOR A FIELD EMISSION ARRANGEMENT

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system. 1. A field emission cathode structure for a field emission arrangement , comprising:a substrate having a first and a second side;a getter element arranged on top of the first side of the substrate and covering a portion of the first side of the substrate;an at least partly permeable structure arranged on top of at least a portion of the getter element; andan electron emission source arranged to cover a portion of the at least partly permeable structure,wherein the getter element is sandwiched between the substrate and the at least partly permeable structure.2. The field emission cathode structure according to claim 1 , wherein the electron emission source comprises a plurality of nanostructures.3. The field emission cathode structure according to claim 2 , wherein the plurality of nanostructures comprises at least one of ZnO nanostructures and carbon nanotubes.4. The field emission cathode structure according to claim 3 , wherein the plurality of ZnO nanostructures is adapted to have a length of at least 1 um.5. (canceled)6. The field emission cathode structure according to claim 1 , wherein the at least partly permeable structure encapsulates the getter element.7. The field emission cathode structure according to claim 1 , wherein the getter element is formed by arranging a layer of a getter material onto the portion of the substrate.8. The field emission cathode structure according to claim 7 , wherein the getter material is non-evaporable getter material.9. The field emission ...

INTEGRATED X-RAY SOURCE

Disclosed herein is an X-ray source, comprising: a cathode in a recess of a first substrate; a counter electrode on a sidewall of the recess, configured to cause field emission of electrons from the cathode; and a metal anode configured to receive the electrons emitted from the cathode and to emit X-ray from impact by the electrons on the metal anode. 1. An X-ray source , comprising:a cathode in a recess of a first substrate;a counter electrode on a sidewall of the recess, configured to cause field emission of electrons from the cathode; anda metal anode configured to receive the electrons emitted from the cathode and to emit X-ray from impact by the electrons on the metal anode.2. The X-ray source of claim 1 , wherein the cathode comprises a plurality of carbon nanotubes.3. The X-ray source of claim 1 , wherein the counter electrode is a continuous ring or dotted ring around the sidewall.4. The X-ray source of claim 1 , further comprising a shield electrode between the counter electrode and the metal anode claim 1 , the shield electrode configured to repel the electrons facing the metal anode.5. The X-ray source of claim 4 , wherein the shield electrode is a continuous ring or dotted ring around the sidewall.6. The X-ray source of claim 1 , wherein the first substrate comprises silicon or silicon oxide.7. The X-ray source of claim 1 , wherein the metal anode comprises one or more metals selected from a group consisting of tungsten claim 1 , molybdenum claim 1 , rhenium claim 1 , copper and combinations thereof.8. The X-ray source of claim 1 , further comprising a second substrate bonded to the first substrate claim 1 , wherein the second substrate covers the recess.9. The X-ray source of claim 8 , wherein the metal anode is supported by the second substrate.10. The X-ray source of claim 9 , wherein the metal anode is on a side of the second substrate away from the cathode.11. The X-ray source of claim 1 , wherein the cathode comprises an array of carbon nanotubes. ...

Field emission devices and methods for making the same

The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Thermionic emission device and method for making the same

A thermionic emission device comprises a first electrode, a second electrode, a single carbon nanotube, an insulating layer and a gate electrode. The gate electrode is located on a first surface of the insulating layer. The first electrode and the second electrode are located on a second surface of the insulating layer and spaced apart from each other. The carbon nanotube comprises a first end, a second end opposite to the first end, and a middle portion located between the first end and the second end. The first end of the carbon nanotube is electrically connected to the first electrode, and the second end of the carbon nanotube is electrically connected to the second electrode.

BIPOLAR GRID FOR CONTROLLING AN ELECTRON BEAM IN AN X-RAY TUBE

A bipolar grid may be positioned between a cathode and an anode. The bipolar grid may receive a positive grid voltage that corresponds to a voltage in an electric field between the cathode and the anode such that the grid does not interfere with an electron beam generated by an electron emitter of the cathode. The bipolar grid may receive a negative grid voltage to isolate the electron emitter such that the electron beam does not reach the anode. 1. An X-ray tube comprising:a cathode including an electron emitter;an anode spaced apart from the cathode;a grid positioned between the cathode and the anode; anda power supply electrically coupled to the grid, wherein the power supply is configured to provide a positive grid voltage and a negative grid voltage to the grid.2. The X-ray tube of claim 1 , wherein the positive grid voltage corresponds to a voltage in the electric field between the cathode and the anode such that the grid does not interfere with an electron beam generated by the electron emitter.3. The X-ray tube of claim 1 , wherein the negative grid voltage reduces electron density of an electron beam generated by the electron emitter.4. The X-ray tube of claim 1 , wherein the negative grid voltage isolates the electron emitter such that an electron beam does not reach the anode.5. The X-ray tube of claim 1 , wherein the negative grid voltage is between 0 and −10 kilovolts (kV) and the positive grid voltage is between 0 and 10 kV.6. The X-ray tube of claim 1 , wherein the grid defines an opening sized and shaped to permit electrons generated by the electron emitter to pass therethrough.7. The X-ray tube of claim 1 , wherein the electron emitter comprises a planar emitter or a coil filament.8. The X-ray tube of claim 1 , wherein the grid is electrically isolated from the cathode.9. The X-ray tube of claim 1 , wherein the voltage of the X-ray tube is between 1 and 500 kilovolts (kV).10. A bipolar grid positioned between a cathode and an anode claim 1 , the ...

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY INCLUDING THE ELECTRODE , FIELD EMISSION DEVICE

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0 Подробнее

Composite, electrochemical active material composite using the composite, electrode including the composite or electrochemical active material composite, lithium battery including the electrode , field emission device including the composite, biosensor including the composite , semiconductor device including the composite , and thermoelectric device including the composite

A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0 Подробнее

Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10 12 to about 10 14 emitting sites per cm 2 . A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

METHOD FOR THE FABRICATION OF ELECTRON FIELD EMISSION DEVICES INCLUDING CARBON NANOTUBE ELECTRON FIELD EMISSION DEVICES

The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate. 1109-. (canceled)110. A method of fabricating a electron field emission device using micro- and nano-fabrication techniques , the method comprising the steps of:selecting a first material substrate that is electrically conductive,depositing onto this first material substrate a thin-film layer of second material layer that is electrically conductive,patterning and etching said second material layer into a first predefined shape and dimensions,depositing onto the surface of the patterned second material layer a third material layer that is electrically conductive,patterning and etching said third material layer into a first predefined shape and dimensions,patterning and etching a third predefined shape and dimension for etching into the first material substrate,performing an etch into the first material substrate to a predefined depth to form a pillar or post shape structure,heating the substrate to a predefined temperature whereby the third material layer re-forms into a predefined shape suitable for carbon nano-tube growth,growing carbon nano-tubes on the third ...

SURFACE-TUNNELING MICRO ELECTRON SOURCE AND ARRAY AND REALIZATION METHOD THEREOF

A tunneling electro source, an array thereof and methods for making the same are provided. The tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure. The tunneling electron source includes an insulating substrate, and two conductive regions and one insulating region arranged on a surface of the insulating substrate. The insulating region is arranged between the two conductive regions and abuts on the two conductive regions. Minimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm. 1. A tunneling electron source , wherein the tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure , the tunneling electron source comprising:an insulating substrate, andtwo conductive regions and one insulating region arranged on a surface or in a surface layer of the insulating substrate, whereinthe insulating region is arranged between the two conductive regions and abuts on the two conductive regions, andminimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm.2. The tunneling electron source according to claim 1 , wherein at least one of the conductive regions has a thickness less than twice an electron mean free path at the minimum spacing.3. The tunneling electron source according to claim 1 , further comprising a pair of electrodes electrically connected to the two conductive regions respectively.4. The tunneling electron source according to claim 3 , whereinthe substrate is a silicon substrate, a quartz substrate, an alumina substrate, a silicon carbide substrate or a glass substrate, andthe pair of electrodes is made of one or more of: metal, graphene, and carbon nanotube.5. The tunneling electron source according to claim 1 , wherein each of the conductive regions is made of one or more metal materials and/or semiconductor ...

FIELD EMISSION DEVICE AND REFORMING TREATMENT METHOD

Emitter () and target () are arranged so as to face each other in vacuum chamber (), and guard electrode () is provided at outer circumferential side of electron generating portion () of emitter (). Emitter () is supported movably in both end directions of vacuum chamber () by emitter supporting unit () having movable body (). To perform regeneration process of guard electrode (), emitter is moved to no-discharge position by operating emitter supporting unit, and state in which field emission of electron generating portion () is suppressed is set, then by applying voltage across guard electrode (), discharge is repeated. After regeneration process, by operating emitter supporting unit again, emitter is moved to discharge position, and state in which field emission of electron generating portion () is possible is set with movement of movable body () toward the other end side being restrained by movement restraining unit (). 111.-. (canceled)12. An electric field radiation device comprising:a vacuum enclosure formed by sealing both end sides of a tubular insulator and having a vacuum chamber at an inner wall side of the insulator;an emitter positioned at one end side of the vacuum chamber and having an electron generating portion that faces to the other end side of the vacuum chamber;a guard electrode arranged at an outer circumferential side of the electron generating portion of the emitter;a target positioned at the other end side of the vacuum chamber and provided so as to face to the electron generating portion of the emitter;a movable emitter supporting unit having a movable body that is movable in both end directions of the vacuum chamber and supporting the emitter movably in the both end directions of the vacuum chamber through the movable body; anda movement restraining unit restraining a movement toward the other end side of the both ends directions of the movable body, and whereinthe emitter supporting unit is configured to change a distance between the ...

EMITTER WITH EXCELLENT STRUCTURAL STABILITY AND ENHANCED EFFICIENCY OF ELECTRON EMISSION AND X-RAY TUBE COMPRISING THE SAME

The present invention provides an emitter, which comprises carbon nanotubes and is excellent in the efficiency of electron emission, and an X-ray tube comprising the same. 1. An emitter , which comprises a first tube composed of a carbon nanotube sheet that comprises a plurality of unit yarns having a structure in which a plurality of carbon nanotubes are aggregated and extend in a first direction ,wherein the first tube is in the form of a pipe having a first internal space in which the carbon nanotube sheet is rolled about an imaginary first axis parallel to the first direction, andthe respective front ends of the unit yarns are oriented in the same direction as the axis.2. The emitter of claim 1 , wherein in the first tube claim 1 , the carbon nanotube sheet is rolled such that no overlapping portion exists from a rolling starting point to a rolling ending point claim 1 , andthe starting point and the ending point are fixed by the π-π interaction while they are contiguous to each other.3. The emitter of claim 1 , wherein in the first tube claim 1 , the carbon nanotube sheet is rolled such that an overlapping portion exists from a rolling starting point to a rolling ending point claim 1 , andthe unit yarns in the overlapping portion are fixed by the π-π interaction while they are contiguous to each other.4. The emitter of claim 1 , wherein in the first tube claim 1 , the thickness between the inner side that forms the first internal space and the outer side exposed to the outside on a transverse cross-section is 1 micrometer to 2 claim 1 ,000 micrometers.5. The emitter of claim 1 , wherein the transverse cross-section of the first tube has a shape selected from the group consisting of a circle claim 1 , an ellipse claim 1 , a semicircle claim 1 , and a polygon claim 1 , andthe longest line that passes through the imaginary first axis on the transverse cross-section of the first tube and connects the opposing contours of the cross-section has a length of 3 ...

FIELD EMISSION DEVICE

Provided is a field emission device. The field emission device includes a cathode electrode having a first surface and a second surface facing the first surface, the cathode electrode including grooves that are recessed from the first surface toward the second surface, the grooves extending in a first direction parallel to the first surface and emitter structures which are disposed within the grooves and each of which includes a core extending in the first direction and a conductive wire configured to surround the core. The grooves may be arranged in a second direction crossing the first direction, and the emitter structures may be disposed at vertical levels different from each other. 1. A field emission device comprises:a cathode electrode having a first surface and a second surface facing the first surface, the cathode electrode comprising grooves that are recessed from the first surface toward the second surface, the grooves extending in a first direction parallel to the first surface; andemitter structures which are disposed within the grooves and each of which comprises a core extending in the first direction and a conductive wire configured to surround the core,wherein the grooves are arranged in a second direction crossing the first direction, andthe emitter structures are disposed at vertical levels different from each other.2. The field emission device of claim 1 , wherein the first surface of the cathode electrode comprises a concave region that is recessed toward the second surface claim 1 , andthe grooves are defined in the concave region.3. The field emission device of claim 2 , wherein the concave region has a constant height along the first direction.4. The field emission device of claim 1 , wherein the grooves comprise a first groove and a second groove spaced apart from each other in a second direction perpendicular to the first direction claim 1 ,a bottom surface of the first groove is inclined with respect to a bottom surface of the second groove ...

FIELD EMISSION DEVICE

A field emission device is configured as a heat engine. 1. An apparatus comprising:a cathode, an anode, a gate, and a suppressor;wherein the anode and cathode are receptive to a first power source to produce an anode electric potential higher than a cathode electric potential; andwherein the gate is receptive to a second power source and the suppressor is receptive to a third power source, and wherein the gate and the suppressor are positioned relative to the cathode and anode to produce an electric potential distribution responsive to the second and third power sources that allows a net current of electrons to flow from the cathode to the anode.2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. The apparatus of wherein the cathode and anode are separated by a distance that is 10-1000 nm.9. The apparatus of wherein the cathode and the gate are separated by a distance that is 1-100 nm.10. The apparatus of wherein the anode and the suppressor are separated by a distance that is 1-100 nm.11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. (canceled)22. (canceled)23. (canceled)24. (canceled)25. (canceled)26. (canceled)27. (canceled)28. The apparatus of wherein the net current of electrons forms a current at the anode claim 1 , and wherein the anode is operably connected to a device to provide the current to the device.29. (canceled)30. (canceled)31. (canceled)32. The apparatus of wherein the cathode and anode are separated by a distance that is 10-10 claim 1 ,000 claim 1 ,000 nm.33. The apparatus of wherein the cathode and the gate are separated by a distance that is 1-1 claim 1 ,000 claim 1 ,000 nm.34. The apparatus of wherein the anode and the suppressor are separated by a distance that is 1-1 claim 1 ,000 claim 1 ,000 nm.35. The apparatus of wherein the suppressor is receptive to the third power source to produce a suppressor electric potential ...

Two-Dimensional Graphene Cold Cathode, Anode, and Grid

In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer. 120-. (canceled)21. An apparatus , comprising:a substrate;a two-dimensional anode positioned on the substrate;a two-dimensional cold cathode positioned on the substrate opposed to the two-dimensional anode; andone or more two-dimensional grids each including a portion positioned on the substrate between the two-dimensional anode and the two-dimensional cold cathode; a first diamond layer;', 'a second diamond layer; and', 'a layer of graphene induced from the first diamond layer, the layer of graphene positioned between the first diamond layer and the second diamond layer., 'wherein each of the two-dimensional anode, the two-dimensional cold cathode, and the one or more two-dimensional grids comprises22. The apparatus of claim 21 , wherein the first diamond layer comprises a hexagonal diamond.23. The apparatus of claim 21 , wherein the layer of graphene is induced from the first diamond layer by heating the substrate and the first diamond layer.24. The apparatus of claim 23 , wherein the heating is performed at a temperature between 400 degrees Celsius and 500 degrees Celsius.25. The apparatus of ...

C-ARM X-RAY APPARATUS

A C-arm X-ray apparatus includes an x-ray emitter () and an X-ray detector () which are maintained on a C-arm () mounted on a reference plane. The x-ray emitter () has nanorods as electron emitters and has an elongated structure which is at least partially aligned along a surface normal of the reference plane. 1. A C-arm X-ray apparatus comprising an X-ray emitter and an X-ray detector , which are held one a C-arm located in a reference plane , wherein the X-ray emitter includes nanorods as electron emitters and defines an elongate structure which is at least partially oriented along a surface normal of the reference plane.2. The X-ray apparatus according to claim 1 , wherein the X-ray emitter has a straight elongate shape.3. The X-ray apparatus according to claim 1 , wherein the X-ray emitter has a curved elongate shape which defines a plane orthogonal relative to the reference plane.4. The X-ray apparatus according to claim 1 , wherein the X-ray emitter is annular claim 1 , wherein two tangents placed onto the X-ray emitter each represent a surface normal of the reference plane.5. The X-ray apparatus according to claim 1 , wherein the X-ray emitter has a polygonal shape.6. The X-ray apparatus according to claim 1 , wherein an entire extension of the X-ray emitter claim 1 , as measured in each section of the elongate structure in a longitudinal direction claim 1 , is at least four times a diameter of the cross section of the X-ray emitter as measured across the elongate structure.7. The X-ray apparatus according to claim 1 , wherein carbon nanotubes (CNT) are provided as nanorods for the emission of electrons.8. The X-ray apparatus according to claim 7 , wherein at least a part of the nanorods is configured as single or multi-wall carbon nanotubes or single or multi-wall heteronitrogen carbon nanotubes.9. The X-ray apparatus according to claim 7 , wherein at least a part of the nanorods contains borides of rare earth metals claim 7 , metal oxides claim 7 , metal ...

X-RAY SOURCE APPARATUS AND CONTROL METHOD THEREOF

The present disclosure relates to an X-ray source apparatus and a control method of the X-ray source apparatus in which a cathode electrode and a gate electrode are arranged in an array form to enable matrix control, and, thus, it is possible to irradiate X-rays at an optimum dose for each position on the subject. Therefore, it is possible to suppress the irradiation of more X-rays than are needed to the subject. Also, it is possible to obtain a high-resolution and high-quality X-ray image. As such, two-dimensional matrix control makes it easy to control the dose of X-rays and makes it possible to uniformly irradiate X-rays to the subject. Therefore, it is possible to manufacture a high-resolution surface X-ray source with less dependence on the size of the focus of electron beams. 1. An X-ray source apparatus that emits X-rays to a subject , comprising:a plurality of cathode electrodes having one or more emitters formed on an upper surface of cathode electrodes;an anode electrode arranged at a predetermined distance from the cathode electrodes;gate electrodes positioned between the emitters and the anode electrode and formed by transferring a graphene thin film on a metal electrode having at least one or more openings;a focusing lens positioned between the gate electrodes and the anode electrode and configured to focus the electron beams emitted from the emitters on the anode electrode; anda control module configured to adjust the dose of X-rays for each position on the subject by performing two-dimensional matrix control to the emitters and the gate electrodes,wherein the cathode electrodes are arranged in an array form, the gate electrodes are arranged in an array form such that the each opening of the gate electrodes faces the each cathode electrodes, andthe control module determines the dose of X-rays by adjusting the applied voltage between the cathode electrodes and the gate electrodes.2. The X-ray source apparatus of claim 1 ,wherein the control module ...

ARRAY OF CARBON NANOTUBE MICRO-TIP STRUCTURES

An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate. 1. An array of carbon nanotube micro-tip structures comprising:an insulating substrate comprising a surface, the surface comprising an edge; anda plurality of patterned carbon nanotube film structures spaced from each other,wherein each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate and comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate, and each of the two strip-shaped arms comprising a plurality of carbon nanotubes parallel to the surface of the insulating substrate.2. The array of carbon nanotube micro-tip structures of claim 1 , wherein an angle α between length directions of the two strip-shaped arms is less than 180°.3. The array of carbon nanotube micro-tip structures of claim 1 , wherein the each of the two strip-shaped arms comprises a plurality of carbon nanotube films stacked together claim 1 , each of the plurality of carbon nanotube films comprises the plurality of carbon nanotubes substantially aligned along a same direction claim 1 , and an angle β between the plurality of carbon nanotubes in different ...

Two-Dimensional Graphene Cold Cathode, Anode, and Grid

In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.

Devices for carbon nanotube length control

A method for manufacturing a carbon nanotube (CNT) of a predetermined length is disclosed. The method includes generating an electric field to align one or more CNTs and severing the one or more aligned CNTs at a predetermined location. The severing each of the aligned CNTs may include etching the predetermined location of the one or more aligned CNTs and applying a voltage across the one or more etched CNTs.

CARBON NANOTUBE ELECTRON EMITTER, METHOD OF MANUFACTURING THE SAME AND X-RAY SOURCE USING THE SAME

The present disclosure provides a method of manufacturing a carbon nanotube electron emitter, including: forming a carbon nanotube film; performing densification by dipping the carbon nanotube film in a solvent; cutting an area of the carbon nanotube film into a pointed shape or a line shape; and fixing the cutting area of the carbon nanotube film arranged between at least two metal members to face upwards with lateral pressure. 1. An X-ray source using a carbon nanotube electron emitter , comprising:a cathode electrode;an anode electrode arranged above the cathode electrode to face the cathode electrode;a carbon nanotube electron emitter formed on the cathode electrode;a gate electrode arranged between the cathode electrode and the anode electrode and arranged corresponding to the carbon nanotube electron emitter;a focusing lens arranged between the gate electrode and the anode electrode; anda getter arranged under the cathode electrode,wherein the carbon nanotube electron emitter includes:a carbon nanotube film which is densified with a solvent or carbonized by adding a carbon-based material; andat least two metal members arranged on respective sides of the carbon nanotube film and fixing the carbon nanotube film.2. The X-ray source of claim 1 ,wherein the solvent includes at least any one of isopropyl alcohol (IPA), ethanol, and nitric acid, andthe densified carbon nanotube film is dipped in the solvent and then dried, and in the densified carbon nanotube film, a space between carbon nanotubes is reduced by removing sodium dodecyl sulfate (SDS) remaining between the carbon nanotubes, and, thus, bonding strength between the carbon nanotubes is increased.3. The X-ray source of claim 1 ,wherein the carbon-based material includes at least one of graphite adhesive, carbon paste, and carbon nanotube (CNT) paste, andthe carbonized carbon nanotube film is prepared by performing heat treatment to the carbon-based material-added carbon nanotube film at a high temperature ...

Tungsten alloy part, and discharge lamp, transmitting tube, and magnetron using the same

It is an object to provide a tungsten alloy exhibiting characteristics equal to or higher in characteristics than those of a thorium-containing tungsten alloy, without using thorium which is a radioactive material, and a discharge lamp, a transmitting tube, and a magnetron using the tungsten alloy. According to the present invention, a tungsten alloy includes 0.1 to 5 wt % of Zr in terms of ZrC.

FIELD EMISSION DEVICE AND FIELD EMISSION METHOD

An emitter () and a target () are arranged so as to face each other in a vacuum chamber (), and a guard electrode () is provided at an outer circumferential side of an electron generating portion () of the emitter (). The emitter () is supported movably in both end directions of the vacuum chamber () by the emitter supporting unit () having a movable body (). The emitter supporting unit () is operated by an operating unit () connected to the emitter supporting unit (). By operating the emitter supporting unit () by the operating unit (), a distance between the electron generating portion () of the emitter () and the target () is changed, and a position of the emitter () is fixed at an arbitrary distance, then field emission is performed with the position of the emitter () fixed.

An electron emitter for an x-ray tube

Example embodiments presented herein are directed towards an electron emitter ( 22, 22 _ 1, 22 _ 2, 22 _ 3 ) for an x-ray tube. The electron emitter comprises an electrically conductive substrate ( 23 ) and a nanostructure material ( 24 ). The nanostructure material is comprised on at least a portion of the electrically conductive substrate. The nanostructure material is made of oxides, nitrides, silicides, selinides or tellurides. Such an electron emitter may be used for hybrid emission, such as Schottky emission or field emission.

TOMOSYNTHESIS WITH SHIFTING FOCAL SPOT X-RAY SYSTEM USING AN ADDRESSABLE ARRAY

A tomosynthesis system has an x-ray source with an addressable array of electron emitting sections on the cathode. The x-ray source moves rotationally about an imaging target, such as a breast. During the rotation, x-rays are emitting from the x-ray source while the x-ray source continues to move. During the emission of x-rays, different subsets of electron-emitting sections of the addressable array are activated to compensate for movement of the x-ray source. By activating the different subsets of electron-emitting sections, an effective focal spot of the x-ray position appears to retain the same shape, size, and position from the perspective of the imaging target, despite movement of the x-ray source itself. 1. A system for radiographic imaging , the system comprising:a rotating arm configured to rotate relative to a target tissue;a radiation source attached to the rotating arm, the radiation source comprising a cathode and an anode, wherein the cathode comprises an array of electron-emitting sections; anda controller operatively connected to the cathode, the controller configured to activate a first subset of the array of electron-emitting sections when the radiation source is located in a first position relative to the target, and activate a second subset of the array of electron-emitting sections when the radiation source is located in a second position relative to the target.2. The system of claim 1 , wherein the rotating arm moves in a first direction and the second subset of the array of electron-emitting sections includes electron-emitting sections spaced apart from the first subset of the array of electron-emitting sections in a direction opposite the first direction.3. The system of claim 1 , wherein each electron-emitting section includes at least one field emission emitter.4. The system of claim 3 , wherein each electron-emitting section includes at least one carbon-nanotube emitter.5. The system of claim 1 , wherein the first subset of electron- ...

METHOD FOR THE FABRICATION OF ELECTRON FIELD EMISSION DEVICES INCLUDING CARBON NANOTUBE ELECTRON FIELD EMISSION DEVICES

The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto an electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate. 1. A method of fabricating an electron field emission device using micro- and nano-fabrication techniques , the method comprising the steps of:selecting a suitable first material substrate that is electrically conductive,depositing onto this first material substrate a thin-film layer of second material layer that is electrically conductive;patterning and etching said second material layer into a second predefined shape and dimensions; andperforming an etch into the first material substrate to a predefined depth to form a pillar or post shape structure to a predefined height.2. The method of claim 1 , wherein the first material substrate is composed of a semiconductor or metal material type.3. The method of claim 1 , wherein the first material substrate is silicon.4. The method of claim 1 , wherein the second material layer is Titanium Nitride (TiN).5. The method of claim 1 , wherein the second material layer is etched to predefined shapes and dimensions using ion milling claim 1 , reactive ion etching claim 1 , or wet etching technology.6. The method of claim 5 ...

Metal protective layer for electron emitters with a diffusion barrier

An emitter with a diameter of 100 nm or less is used with a protective cap layer and a diffusion barrier between the emitter and the protective cap layer. The protective cap layer is disposed on the exterior surface of the emitter. The protective cap layer includes molybdenum or iridium. The emitter can generate an electron beam. The emitter can be pulsed.

Infrared optical sensor and manufacturing method thereof

Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.

Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same

In this nanowire-equipped emitter, the nanowires are made of hafnium carbide (HfC) single crystal, the longitudinal direction of the nanowires match the <100> crystal direction of the hafnium carbide single crystal, and the end part of the nanowires through which electrons are to be released comprise the (200) face and the {310} face of the hafnium carbide single crystal, with the (200) face being the center and the {311} face surrounding the (200) face.

SILICON FIELD EFFECT EMITTER

A system and method for generating X-ray radiation in a predefined spatial distribution on an anode. The system includes an anode, a first switching device, a second switching device, a control unit, and an emitter with multiple field effect emitter needles. At least one field effect emitter needle of the multiple field effect emitter needles includes a diameter of less than 1 μm and silicon. A first group of the multiple field effect emitter needles may be activated or deactivated by the first switching device. A second group of the multiple field effect emitter needles may be activated or deactivated by the second switching device. The first group differs from the second group. The control unit is configured to actuate the first switching device and the second switching device. 1. An X-ray tube comprising:an anode;a first switching device;a second switching device;a control unit, the control unit configured to actuate the first switching device and the second switching device; and wherein at least one field effect emitter needle of the multiple field effect emitter needles includes a diameter of less than 1 μm and silicon;', 'wherein a first group of the multiple field effect emitter needles may be activated or deactivated by the first switching device;', 'wherein a second group of the multiple field effect emitter needles may be activated or deactivated by the second switching device; and', 'wherein the first group differs from the second group., 'an emitter comprising multiple field effect emitter needles;'}2. The X-ray tube of claim 1 , wherein the first group differs from the second group in an arrangement of the multiple field effect emitter needles.3. The X-ray tube of claim 2 , wherein the first group differs from the second group in a number of the multiple field effect emitter needles.4. The X-ray tube of claim 1 , wherein the first group differs from the second group in an acceleration voltage applied.5. The X-ray tube of claim 4 , wherein the first ...

Field emission cathode

The present invention relates to a field emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

Cerium (IV) salts as effective dopant for carbon nanotubes and graphene

A process comprises combining a Ce (IV) salt dissolved in a solvent comprising water with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid, Ce (IV) ammonium salt of a sulfur oxide acid, Ce (IV) salt of a lower alkyl organo sulfur acid, or Ce (IV) salt of a lower alkane organo sulfur acid. In one embodiment the Ce (IV) salt is selected from Ce (IV) ammonium nitrate, Ce (IV) ammonium sulfate, Ce (IV) lower alkyllsulfonate, or Ce (IV) trifluoro lower alkanesulfonate. A product is produced by this process. An article of manufacture comprises this product on a substrate.

Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology

A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.

Lateral-emitter field-emission device with simplified anode

A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode structure (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having one or more control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode (140) is positioned in a plane above or below the emitter edge or tip (110) and automatically aligned to that edge. The simplified devices are specially adapted for use in arrays, including field emission display arrays.

Ink jet application for carbon nanotubes

Carbon nanotubes, which may or may not be mixed with particles, organic materials, non-organic materials, or solvents, are deposited on a substrate to form a cold cathode. The deposition of the carbon nanotube mixture may be performed using an ink jet printing process or a screen printing process.

Magnetron with diamond coated cathode

A radio frequency magnetron device for generating radio frequency power includes a cathode at least partially formed from a diamond material. An anode is disposed concentrically around the cathode. An electron field is provided radially between the anode and the cathode. First and second oppositely charged pole pieces are operatively connected to the cathode for producing a magnetic field in a direction perpendicular to the electric field. A filament is provided within the electron tube which when heated produces primary electrons. Alternatively, a voltage is applied to the anode which causes primary electrons to emit from the diamond coated cathode. A portion of the primary electrons travel in a circular path and induce radio frequency power. Another portion of the primary electrons spiral back and collide with the cathode causing the emission of secondary electrons. The secondary electron emission sustains operation of the magnetron device once the device has been started.

Magnetron

A cathode substrate 10 is heated to 400 to 600 °C in the atmosphere of hydrocarbon gas such as methane and the gas is allowed to react with the surface of the cathode substrate 10 by a thermal CVD method. Thus, an electron emission source in which graphite nano-fibers 11 are allowed to grow in a gaseous-phase on the surface of the cathode substrate 10 by using nickel or iron existing on the surface of the cathode substrate 10 as a nucleus is held between upper and lower end hats 12 to form a cathode part 13.

Magnetron

METHOD FOR PRODUCING A COLD CATHODE, A DEVICE FOR FIELD EMISSION AND A FIELD EMISSION DEVICE PRODUCED BY THIS METHOD.

Carbon nanotube emitter and its fabrication method and field emission device (FED) using the carbon nanotube emitter and its fabrication method

A carbon nanotube emitter and its fabrication method, a Field Emission Device (FED) using the carbon nanotube emitter and its fabrication method include a carbon nanotube emitter having a plurality of first carbon nanotubes arranged on a substrate and in parallel with the substrate, and a plurality of the second carbon nanotubes arranged on a surface of the first carbon nanotubes.

METHOD FOR PRODUCING DIAMOND FILMS

Verfahren zum herstellen von diamantfilmen

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ald) process

A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me 5 Cp)(OR) 3 (I), wherein R is selected in the group consisting in methyl, ethyl, isopropyl; or of the formula Ti(R 1 Cp)(OR 2 ) 3 (II), wherein R 1 is selected from the group consisting in H, methyl, ethyl, isopropyl and R 2 is independently selected from the group consisting in methyl, ethyl, isopropyl or tert- butyl; b) reacting the vapor comprising the at least one compound of formula (I) or (II) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.

Field emission devices using ion bombarded carbon nanotubes

The present invention relates to a field emission device comprising an anode and a cathode, wherein said cathode includes carbon nanotubes which have been treated with an ion beam. The ion beam may be any ions, including gallium, hydrogen, helium, argon, carbon, oxygen, and xenon ions. The present invention also relates to a field emission cathode comprising carbon nanotubes, wherein the nanotubes have been treated with an ion beam. A method for treating the carbon nanotubes and for creating a field emission cathode is also disclosed. A field emission display device containing carbon nanotube which have been treated with an ion beam is further disclosed.

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ald) process

a) 화학식 Ti(Me 5 Cp)(OR) 3 (I)(식 중, R은 메틸, 에틸, 이소프로필로 구성된 군에서 선택됨); 또는 화학식 Ti(R 1 Cp)(OR 2 ) 3 (II)(식 중, R 1 은 H, 메틸, 에틸, 이소프로필로 구성된 군에서 선택되고, R 2 는 독립적으로 메틸, 에틸, 이소프로필 또는 tert-부틸로 구성된 군에서 선택됨)의 전구체 화합물 1 이상을 포함하는 증기를 제공하는 단계; b) 화학식 (I) 또는 (II)의 화합물 1 이상을 포함하는 증기를 원자 층 증착 공정에 따라 기재와 반응시켜 상기 기재의 1 이상의 표면 위에 티타늄-함유 복합물의 층을 형성하는 단계를 적어도 포함하는, 기재 위 티타늄-함유 층의 제조 방법. a) a compound of the formula Ti (Me 5 Cp) (OR) 3 (I) wherein R is selected from the group consisting of methyl, ethyl, isopropyl; Or a compound of the formula Ti (R 1 Cp) (OR 2 ) 3 (II) wherein R 1 is selected from the group consisting of H, methyl, ethyl, isopropyl and R 2 is independently methyl, ethyl, &lt; / RTI &gt;tert-butyl); b) reacting a vapor comprising one or more compounds of formula (I) or (II) with a substrate in accordance with an atomic layer deposition process to form a layer of a titanium-containing composite on at least one surface of said substrate , A method for producing a titanium-containing layer on a substrate.

Manufacturing method of field emission array

A manufacturing method of field emitting element is provided to implement the large-sized field emission device by making the interval of emitter to the nano size. A manufacturing method of field emitting element includes the step of forming the nanosphere layer(102) on the substrate(100); the step of ashing the nanosphere layer in order to reduce the size; the step of depositing the metal catalyst(106) on the surface of substrate; the step of removing the nanosphere; the step of growing the carbon nanotube in the metal catalyst. The nanosphere includes the polystyrene.

Углеродсодержащий наноматериал с низким порогом полевой эмиссии электронов и способ его получения (варианты)

ÐÎÑÑÈÉÑÊÀß ÔÅÄÅÐÀÖÈß (19) RU (11) 2007 112 860 (13) A (51) ÌÏÊ H01J 9/02 (2006.01) ÔÅÄÅÐÀËÜÍÀß ÑËÓÆÁÀ ÏÎ ÈÍÒÅËËÅÊÒÓÀËÜÍÎÉ ÑÎÁÑÒÂÅÍÍÎÑÒÈ, ÏÀÒÅÍÒÀÌ È ÒÎÂÀÐÍÛÌ ÇÍÀÊÀÌ (12) ÇÀßÂÊÀ ÍÀ ÈÇÎÁÐÅÒÅÍÈÅ (21), (22) Çà âêà: 2007112860/09, 29.03.2007 Àäðåñ äë ïåðåïèñêè: 198332, Ñàíêò-Ïåòåðáóðã, óë. Ìàðøàëà Êàçàêîâà, 28, ê.1, êâ.342, Ñ.Ê. Ãîðäååâó (72) Àâòîð(û): Ãîðäååâ Ñåðãåé Êîíñòàíòèíîâè÷ (RU), Êîð÷àãèíà Ñâåòëàíà Áîðèñîâíà (RU) R U (43) Äàòà ïóáëèêàöèè çà âêè: 20.10.2008 Áþë. ¹ 29 (71) Çà âèòåëü(è): Ãîðäååâ Ñåðãåé Êîíñòàíòèíîâè÷ (RU), Êîð÷àãèíà Ñâåòëàíà Áîðèñîâíà (RU) 2 0 0 7 1 1 2 8 6 0 R U Ñòðàíèöà: 1 RU A (57) Ôîðìóëà èçîáðåòåíè 1. Óãëåðîäñîäåðæàùèé íàíîìàòåðèàë ñ íèçêèì ïîðîãîì ïîëåâîé ýìèññèè ýëåêòðîíîâ, èìåþùèé ðàçìåð ÷àñòèö ìåíåå 50 ìêì, îòëè÷àþùèéñ òåì, ÷òî îí ïðåäñòàâë åò ñîáîé ÷àñòèöû, ñîñòî ùèå èç äðà èç äèýëåêòðè÷åñêîãî èëè ïîëóïðîâîäíèêîâîãî ìàòåðèàëà, è ïîâåðõíîñòíîãî ñëî , ñîñòî ùåãî èç ãðàôèòîïîäîáíîãî óãëåðîäà òîëùèíîé 0,5-50 íì. 2. Óãëåðîäñîäåðæàùèé íàíîìàòåðèàë ïî ï.1, îòëè÷àþùèéñ òåì, ÷òî äèýëåêòðè÷åñêèì èëè ïîëóïðîâîäíèêîâûì ìàòåðèàëîì âë þòñ àëìàç, íèòðèä áîðà, íèòðèä êðåìíè , êàðáèä êðåìíè , êàðáèä áîðà, îêñèä êðåìíè , êðåìíèé. 3. Ñïîñîá ïîëó÷åíè óãëåðîäñîäåðæàùåãî íàíîìàòåðèàëà ñ íèçêèì ïîðîãîì ïîëåâîé ýìèññèè ýëåêòðîíîâ, îòëè÷àþùèéñ òåì, ÷òî ïîðîøêè äèýëåêòðè÷åñêîãî èëè ïîëóïðîâîäíèêîâîãî ìàòåðèàëà òåðìîîáðàáàòûâàþò â ñðåäå óãëåâîäîðîäîâ ïðè òåìïåðàòóðå, ïðåâûøàþùåé òåìïåðàòóðó èõ òåðìè÷åñêîãî ðàçëîæåíè , â òå÷åíèå âðåìåíè, íåîáõîäèìîãî äë îáðàçîâàíè íà ïîâåðõíîñòè ÷àñòèö ïîðîøêà ñëî óãëåðîäà òîëùèíîé 0,5-50 íì. 4. Ñïîñîá ïî ï.3, îòëè÷àþùèéñ òåì, ÷òî â êà÷åñòâå äèýëåêòðè÷åñêîãî èëè ïîëóïðîâîäíèêîâîãî ìàòåðèàëà èñïîëüçóþò ïîðîøêè àëìàçà, íèòðèä áîðà, íèòðèä êðåìíè , êàðáèä êðåìíè , êàðáèä áîðà, îêñèä êðåìíè , êðåìíè ñ ðàçìåðîì ÷àñòèö 0,1-10 ìêì. 5. Ñïîñîá ïîëó÷åíè óãëåðîäñîäåðæàùåãî íàíîìàòåðèàëà ñ íèçêèì ïîðîãîì ïîëåâîé ýìèññèè ýëåêòðîíîâ, îòëè÷àþùèéñ òåì, ÷òî ïîðîøêè àëìàçà òåðìîîáðàáàòûâàþò â èíåðòíîé ñðåäå èëè âàêóóìå ïðè òåìïåðàòóðå, ïðåâûøàþùåé ...

碳纳米管的喷墨施加

可与颗粒、有机材料、非有机材料或溶剂混合或未混合的碳纳米管沉积在基材上形成冷阴极。可使用喷墨印刷方法或丝网印刷方法沉积所述碳纳米管混合物。