Ion irradiation of a target at very high and very low kinetic ion energies

For the establishment of the current in the ion implantation of the ribbon-shaped ion beam method and its ion beam system

이온 주입 시스템

... 인입(incoming) 아날로그 파형의 위상을 측정하고 제어하기 위한 시스템이 개시된다. 시스템은, 인입 아날로그 파형을 디지털 표현으로 변환하기 위한 아날로그 대 디지털 컨버터를 포함한다. 시스템은 또한, 프로그램가능한 양의 지연이 ADC에 대한 샘플 클럭 내로 도입되는 것을 가능하게 하는 클럭 지연 생성기를 포함한다. 시스템은, 클럭 지연 생성기에 의해 사용되는 지연을 조작하고 ADC로부터의 출력들을 저장하기 위한 제어기를 더 포함한다. 그런 다음, 제어기는, 인입 아날로그 파형의 주파수, 이것의 위상 드리프트, 및 마스터 클럭에 대한 이것의 위상을 결정하기 위해 디지털화된 표현을 사용할 수 있다. 그런 다음, 제어기는 이러한 결정들에 응답하여 RF 생성기의 출력을 수정할 수 있다.

Plasma source and plasma processing device

The present invention addresses the problem of providing a plasma source capable of supplying plasma to a plasma processing space in a state in which a gas is sufficiently ionized. This plasma source 10 is a device for supplying plasma to a plasma processing space wherein processing using plasma is to be carried out. This plasma source 10 comprises: a plasma generation chamber 11; an opening 12 wherethrough the plasma generation chamber 11 and the plasma processing space communicate; a high-frequency antenna 13, which is a coil having a number of turns of less than one and provided at a position allowing a high-frequency electromagnetic field of a predetermined intensity required for generating the plasma to be generated inside the plasma generation chamber 11; voltage application electrodes 14 provided inside the plasma generation chamber 11 at a location near the opening 12; and a gas supply unit (gas supply tube) 15 supplying a plasma source gas, and located inside the plasma generation ...

Method of setting up medium current ribbon beam for ion implantation and ion beam system thereof

RF RESONATOR FOR ION BEAM ACCELERATION

An RF feedthrough has an electrically insulative cone that is hollow having first and second openings at first and second ends having first and second diameters. The first diameter is larger than the second diameter, defining a tapered sidewall of the cone to an inflection point. A stem is coupled to the second end of the cone, and passes through the first opening and second opening. A flange is coupled to the first end of the cone and has a flange opening having a third diameter. The third diameter is smaller than the first diameter. The stem passes through the flange opening without contacting the flange. The flange couples the cone to a chamber wall hole. Contact portions of the cone may be metallized. The cone and flange pass the stem through the hole while electrically insulating the stem from the wall of the chamber.

Textured Silicon Liners In Substrate Processing Systems

Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

HIGH-VOLTAGE ENERGY-DISPERSIVE SPECTROSCOPY USING A LOW-VOLTAGE SCANNING ELECTRON MICROSCOPE

A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus that includes a scanning electron microscope, an x-ray detector, and an auxiliary acceleration voltage source. The scanning electron microscope includes a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy. The auxiliary acceleration voltage source is to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy. At the final beam energy, the electron beam is capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy. 1. A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus , comprising:a scanning electron microscope comprising a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy;an x-ray detector; andan auxiliary acceleration voltage source to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy, the electron beam at the final beam energy capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy.2. The spectroscopy apparatus of claim 1 , in which the x-ray detector comprises a silicon drift detector.3. The spectroscopy apparatus of claim 2 , in which the silicon drift detector is part of a silicon drift detector die mounted on the layered electron beam column.4. The spectroscopy apparatus of claim 3 , in which the silicon drift detector die is mounted on a surface of the layered electron beam column facing the sample holder.5. The spectroscopy apparatus of claim 3 , in which:the layered electron beam column ...

Detection systems in semiconductor metrology tools

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.

THREE LAYER RESONATOR COIL FOR LINEAR ACCELERATOR

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator including at least one acceleration stage including a resonator and a resonator coil disposed within a resonator chamber, wherein the resonator coil is a tubular body having a plurality of coaxial layers, including an inner layer, a middle layer, and an outer layer, wherein the outer layer is formed of a dielectric material.

Ion source

In an ion source including an ionization chamber defining an enclosed volume having a gas inlet for receiving a feed gas, an exit aperture for enabling ions to exit said ionization chamber defining an ion beam along an ion beam axis, and an electron source for generating electrons in order to ionize said feed gas in said ionization chamber, said exit aperture is formed as an elongated slot for generating a ribbon beam.

SUBSTRATE PROCESSING SYSTEM, ION IMPLANTATION SYSTEM, AND BEAMLINE ION IMPLANTATION SYSTEM

Charged particle beam device

An object of the invention is to stably supply an electron beam from an electron gun, that is, to prevent variation in intensity of the electron beam. The invention provides a charged particle beam device that includes an electron gun having an electron source, an extraction electrode to which a voltage used for extracting electrons from the electron source is applied, and an acceleration electrode to which a voltage used for accelerating the electrons extracted from the electron source is applied, a first heating unit that heats the extraction electrode, and a second heating unit that heats the acceleration electrode.

l.adungsteilchenstrahlvorrichtung

Ein Zweck der vorliegenden Erfindung ist es, eine Ladungsteilchenstrahlvorrichtung bereitzustellen, die einen außeraxialen Betrag unterdrückt, wenn sich ein Sichtfeld bewegt, wobei die Bewegung eine Aberration verursacht, und ermöglicht, dass große Sichtfeldbewegungen ausgeführt werden. Um den oben erwähnten Zweck zu erreichen, wird diese Ladungsteilchenstrahlvorrichtung mit einer Objektivlinse (12) und Deflektoren (23) für Sichtfeldbewegungen bereitgestellt, wobei die Deflektoren (23) einen Ladungsteilchenstrahl ablenken, und wird ferner mit einer Beschleunigungsröhre (11), die zwischen der Objektivlinse und den Deflektoren für Sichtfeldbewegungen positioniert ist, einer Stromquelle, die eine Spannung an die Beschleunigungsröhre anlegt, und einer Steuervorrichtung, welche die an die Stromquelle anzulegende Spannung in Reaktion auf die Ablenkungsbedingungen der Deflektoren für Sichtfeldbewegungen steuert, bereitgestellt.

Masked ion beam lithography apparatus

A particle beam exposure apparatus 1 for irradiating a target 41 with a beam of energetic electrically charged particles 21 via a pattern definition means 102 with a plurality of apertures. The patterned beam 22 emerging from said stencil mask 102 is projected, and specifically demagnified, by means of a projection system 103 onto the target 41. The apparatus further comprises an acceleration/deceleration means 32 which generates a potential gradient orientated parallel to the path of the structured beam 22, and which is constant over at least a cross-section of said beam 22. The acceleration/deceleration means 32 may comprise a sequence of equally spaced ring-shaped electrodes (see 33 in figure 2), and be located after said projection system 31, or alternatively, immediately before or after the pattern definition means 102 (see figures 6, 7 and 8).

Medium current ribbon beam for ion implantation

A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Rasterionenmikroskop und Sekundärteilchen-Steuerungsverfahren

Die vorliegende Erfindung ermöglicht eine detaillierte Betrachtung eines Prüfkörpers und verhindert eine Verzerrung eines Betrachtungsbilds, selbst wenn der ein isolierendes Material enthaltende Prüfkörper partiell geladen ist. Bei einem Rasterionenmikroskop (200) unter Verwendung einer Gasfeldionisations-Ionenquelle (100) ist ein Dünnfilm (80) zwischen einem ionenoptischen System (300) und einem Prüfkörper (6) angeordnet und ein Ionenstrahl wird auf diesen Dünnfilm (80) gelenkt und tritt durch diesen hindurch, um einen neutralisierten Strahl am Prüfkörper zu fokussieren. Ferner ist eine Elektrode (82) zur Regulierung von vom Dünnfilm (80) abgegebenen Sekundärelektronen vorgesehen, um zu verhindern, dass sich ein Rauschen mit dem Betrachtungsbild vermischt. The present invention enables a specimen to be viewed in detail and prevents distortion of a specimen even when the specimen containing an insulating material is partially charged. In a scanning ion microscope (200) using a gas field ionization ion source (100), a thin film (80) is arranged between an ion-optical system (300) and a test specimen (6) and an ion beam is directed onto this thin film (80) and passes through it through to focus a neutralized beam on the specimen. An electrode (82) is also provided for regulating secondary electrons emitted by the thin film (80) in order to prevent noise from mixing with the observation image.

Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

PLASMA ETCH TOOL FOR HIGH ASPECT RATIO ETCHING

High aspect ratio features are etched using a plasma etching apparatus that can alternate between accelerating negative ions of reactive species at a low energy and accelerating positive ions of inert gas species at a high energy. The plasma etching apparatus can be divided into at least two regions that separate a plasma-generating space from an ionization space. Negative ions of the reactive species can be generated by electron attachment ionization in the ionization space when a plasma is ignited in the plasma-generating space. Positive ions of the inert gas species can be generated by Penning ionization in the ionization space when the plasma is quenched in the plasma-generating space.

FILAMENT POWER SUPPLY FOR ELECTRON ACCELERATOR AND ELECTRON ACCELERATOR

The present disclosure provides a filament power supply for an electron accelerator and an electron accelerator. The filament power supply includes: a rectifier circuit configured to convert a power frequency AC voltage signal into a DC voltage signal; an inverter circuit configured to convert the DC voltage signal into an AC voltage signal and output the AC voltage signal; a sampling circuit configured to sample at least one of a current or a voltage of the AC voltage signal to obtain at least one of a current sampling signal or a voltage sampling signal; a pulse width modulation control chip configured to adjust a duty cycle of a pulse width modulation signal output by the pulse width modulation control chip until a voltage of the current sampling signal is equal to that of a reference current signal, or a voltage of the voltage sampling signal is equal to that of a reference voltage signal; and a modulation circuit configured to modulate the power frequency AC voltage signal according ...

공진기 및 이온 주입기의 공진기

... 본 명세서의 실시예들은 이온 주입기를 위한 공진기에 관한 것이다. 일부 실시예에서, 공진기는 하우징, 및 하우징 내에 부분적으로 배치된 제1 코일 및 제2 코일을 포함할 수 있다. 제1 코일 및 제2 코일 각각은 이온 빔을 수용하기 위한 개구를 포함하는 제1 단부, 및 중심 축을 중심으로 나선형으로 연장되는 중심 섹션을 포함할 수 있고, 중심 축은 이온 빔의 빔라인에 평행하고, 중심 섹션의 내측은 평탄화된 표면을 갖는다.

Ion implanter

An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.

Charged particle beam device

Signal electrons with high energy that pass near an optical axis, for example, backscattered electrons or secondary electrons in a booster optical system, can be detected. Therefore, there is provided a charged particle beam device including: a charged particle beam source configured to generate a charged particle beam; an objective lens configured to focus the charged particle beam to a sample; and a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, in which a detection surface of the first charged particle detecting element is disposed on a center axis of the objective lens.

Ion implantation system and control method

Particle beam irradiation apparatus and particle beam treatment apparatus

이온 조사 장치, 이온 조사 방법

... 이온원으로부터 이온 가속 장치(16)에 입사되고, 이온 가속관(24) 내를 비행하는 정이온을 이온 가속관(24)의 내부에 배치한 복수의 가속 전극(2a~2h)에 의해 가속하여, 조사 대상물에 조사한다. 이온 가속관(24)내에는, 자석 장치(5)를 복수 배치하고, 각 자석 장치(5)가 각각 형성하는 자력선의 방향을, 인접하는 자석 장치(5)에서 0도보다 크고, 90도 이하의 각도로 다르게 하고, 각 자력선을 이온 가속관(24)내에서, 한 방향으로 회전시킨다. 이온 가속관(24)내에서 역진하는 전자를 자력선과 교차시키고, 전자로 역진시키면서, 비행축으로부터의 거리를 증가시킨다. 전자는 이온 가속관(24)내의 부재와 충돌하고, 고에너지가 되기 전에 정지하므로, 고에너지 X선은 발생하지 않는다.

Substrate processing system and ion implantation system

Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking.

Charged Particle Beam Apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector ( and ) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit ( and ) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions. 1. A method of positioning a visual field at a desired position on a specimen by using a visual field movement deflector that changes an arrival position of a beam emitted from a charged particle source , the method comprising:deflecting the beam to a desired arrival position by using the visual field movement deflector;adjusting a deflection condition of the visual field movement deflector so as to cancel an inclination of an incident beam when the beam is deflected to the desired arrival position; andadjusting an aberration correction unit disposed between the charged particle source and the visual field movement deflector so as to cancel off-axis chromatic aberration generated according to an amount of visual field movement by the visual field movement deflector and off-axis chromatic aberration generated by setting the deflection condition of the visual field movement deflector so as to cancel the inclination of the incident beam.2. A charged particle beam apparatus comprising:an objective lens configured to focus a beam emitted from a charged particle source and irradiate a specimen;a visual field movement ...

Focused ion beam low kV enhancement

The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung

Ein Verfahren zum Herstellen einer Halbleitervorrichtung umfasst ein Reduzieren einer Dicke eines Halbleitersubstrats. Das Verfahren umfasst zudem ein Ändern einer Ionenbeschleunigungsenergie eines Ionenstrahls, während eine relative Bewegung zwischen dem Halbleitersubstrat und dem auf das Halbleitersubstrat auftreffenden Ionenstrahl ausgeführt wird.

PLASMA GENERATOR WITH IMPROVED ION DECOMPOSITION RATE

The present invention provides a plasma generator with an improved ion decomposition rate which improves a decomposition rate of a reaction gas by changing an ion trajectory of the reaction gas inside the plasma generator to increase a residence time of the reaction time. A remote plasma generator providing a plasma ion to a process chamber comprises: a plasma source providing ionization energy for forming plasma; and an ion acceleration means including at least one ion acceleration electrode which provides energy so as to form a second ion acceleration direction different from a first ion acceleration direction formed by the ionization energy. Therefore, the ion trajectory of the ion can be changed. COPYRIGHT KIPO 2017 ...

Charged particle beam device, and observation method and elemental analysis method using the same

A charged particle beam device capable of easily discriminating the energy of secondary charged particles is realized. The charged particle beam device includes a charged particle source, a sample stage on which a sample is placed, an objective lens that irradiates the sample with a charged particle beam from the charged particle source, a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam, a detector that detects the secondary charged particles deflected by the deflector, a sample voltage control unit that applies a positive voltage to the sample or the sample stage, and a deflection intensity control unit that controls the intensity with which the deflector deflects the secondary charged particles.

ACCELERATOR SYSTEM FOR MINERAL COMPONENT ANALYSIS, SYSTEM AND METHOD FOR MINERAL COMPONENT ANALYSIS

The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray.

Ion implantation system and ion source

Textured silicon liners in substrate processing systems

ELECTRON BEAM GENERATING APPARATUS CAPABLE OF CONTROLLING RESONANT FREQUENCY BY INSERTING GASKETS WHICH HAVE VARIOUS THICKNESSES AND A MNUFATURING METHOD THEROF

PURPOSE: An electron beam generating apparatus and a manufacturing method thereof are provided to control the resonant frequency of a resonant cavity by uniting a cathode and housing and forming the resonant cavity. CONSTITUTION: A cathode(10) of housing(50) is combined in the one side of an opening part. A resonant cavity is formed in the inner side of the housing. The housing comprises a first resonant cavity(51) and a second resonant cavity(52). The housing is composed of a copper material or oxygen free copper. A gasket(30) is formed between the cathode and the housing. The gasket is compacted according to the bond strength between the housing and the cathode and secludes the resonant cavity with outside. The electron beam which is generated in the cathode is discharged through an electron beam discharging path. COPYRIGHT KIPO 2012 ...

Charged Particle Beam Apparatus and Method for Adjusting Imaging Conditions for the Same

A charged particle beam apparatus with reduced frequency of lens resetting operations and thus with improved throughput. The apparatus includes an electron source configured to generate an electron beam, an objective lens to which coil current is adapted to be applied to converge the electron beam on a sample, a focal position adjustment device configured to adjust the focal position of the electron beam, a detector configured to detect electrons from the sample, a display unit configured to display an image of the sample in accordance with a signal from the detector, a storage unit configured to store information on the hysteresis characteristics of the objective lens, and an estimation unit configured to estimate a magnetic field generated by the objective lens on the basis of the coil current, the amount of adjustment of the focal position by the focal position adjustment device, and the information on the hysteresis characteristics.

HIGH-FREQUENCY ACCELERATION TYPE ION ACCELERATION AND TRANSPORTATION APPARATUS HAVING HIGH ENERGY PRECISION

A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

Aberration correcting device for an electron microscope and an electron microscope comprising such a device

The invention relates to an aberration correcting device for correcting aberrations of focusing lenses in an electron microscope. The device comprises a first and a second electron mirror, each comprising an electron beam reflecting face. Between said mirrors an intermediate space is arranged. The intermediate space comprises an input side and an exit side. The first and second electron mirrors are arranged at opposite sides of the intermediate space, wherein the reflective face of the first and second mirror are arranged facing said intermediate space. The first mirror is arranged at the exit side and the second mirror is arranged at the input side of the intermediate space. In use, the first mirror receives the electron beam coming from the input side and reflects said beam via the intermediate space towards the second mirror. The second mirror receives the electron beam coming from the first mirror, and reflects the electron beam via the intermediate space towards the exit side. The ...

APPARATUS FOR GENERATING ELECTRON BEAMS, AND METHOD FOR MANUFACTURING SAME

The present invention relates to an apparatus for generating an electron beam, comprising: a cathode; a housing which has an opening formed at one side thereof such that the cathode is coupled to the opening, and which has a resonant cavity formed therein; and a gasket interposed between the cathode and the housing such that the gasket is compressed in accordance with the coupling strength between the cathode and the housing so as to shut off the resonant cavity from the outside.

INSPECTION DEVICE

An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object. 1. A photoelectron generation device comprising:a photoelectron surface generating photoelectrons by being irradiated with a light from a light source;a lens extracting the photoelectrons generated from the photoelectron surface, and accelerating the extracted photoelectrons; anda numerical aperture being passed through by the accelerated photoelectrons;wherein the accelerated photoelectrons passing through the numerical aperture are irradiated to an inspection object as a primary beam.2. The photoelectron generation device according to whereinthe lens extracts the photoelectrons generated from the photoelectron surface in the opposite direction from the light source.3. The photoelectron generation device according to further comprising:a field aperture arranged between the light source and the photoelectron surface, and being passed through by the light.4. The photoelectron generation device according to whereinthe light is irradiated to the photoelectron surface from the lens side.5. The photoelectron generation device ...

High throughput multi-electron beam system

Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

Accelerator system for mineral component analysis, system and method for mineral component analysis

Abstract The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray. Fig.2 ...

High throughput multi-electron beam system

Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

Voltage Control for Etching Systems

The present disclosure relates to an ion beam etching (IBE) system including a process chamber. The process chamber includes a plasma chamber configured to provide plasma. In addition, the process chamber includes an accelerator grid having multiple accelerator grid elements including a first accelerator grid element and a second accelerator grid element. A first wire is coupled to the first accelerator grid element and configured to supply a first voltage to the first accelerator grid element. A second wire is coupled to the second accelerator grid element and configured to supply a second voltage to the second accelerator grid element, where the second voltage is different from the first voltage. A first ion beam through a first hole is controlled by the first accelerator grid element, and a second ion beam through a second hole is controlled by the second accelerator grid element.

Ion irradiation of a target at very high and very low kinetic ion energies

Secondary charged particle analyzing apparatus and secondary charged particle extracting section

In a secondary charged particle analyzing apparatus such as a secondary ion mass analyzing apparatus, a scanning type electron mass analyzer, etc., in order to obtain a high resolving power and a high sensitivity, trajectories of secondary charged particles are corrected by means of an accelerating lens formed in a secondary charged particle extracting section disposed within the apparatus.

Charged Particle Beam Apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector ( and ) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit ( and ) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

Ion implanter, ion beam irradiated target, and ion implantation method

An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.

Ionenätzvorrichtung

Es ist eine Ionenätzvorrichtung vorgesehen, die dafür eingerichtet ist, die Verunreinigung einer Strahlformungselektrode zu unterdrücken. Die Ionenätzvorrichtung weist Folgendes auf: eine Ionenkanone 101, die eine Strahlformungselektrode zur Formung eines Ionenstrahls enthält, einen Probenhalter 107 zur Befestigung einer durch Bestrahlung mit dem Ionenstrahl 102 zu bearbeitenden Probe 106, eine Maske 110 zum Abschirmen eines Teils der Probe 106 vom Ionenstrahl 102 und eine Ionenkanonen-Steuereinrichtung 103 zum Steuern der Ionenkanone 101.

Accelerator system for mineral component analysis, system and method for mineral component analysis

Abstract The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray.

Ion implanter and method of controlling ion implanter

A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.

Charged Particle Beam Inclination Correction Method and Charged Particle Beam Device

With conventional optical axis adjustment, a charged particle beam will not be perpendicularly incident to a sample, affecting the measurements of a pattern being observed. Highly precise measurement and correction of a microscopic inclination angle are difficult. Therefore, in the present invention, in a state where a charged particle beam is irradiated toward a sample, a correction of the inclination of the charged particle beam toward the sample is performed on the basis of secondary electron scanning image information from a reflector plate. From the secondary electron scanning image information, a deviation vector for charged particle beam deflectors is adjusted, causing the charged particle beam to be perpendicularly incident to the sample. At least two stages of charged particle beam deflectors are provided.

HIGH THROUGHPUT MULTI-ELECTRON BEAM SYSTEM

Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

対物レンズ系及び電子顕微鏡

Accelerator system for mineral component analysis, system and method for mineral component analysis

Abstract The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray. Fig.2 ...

탠덤 가속기 및 이온 주입 시스템

... 개선된 성능을 갖는 탠덤 가속기 및 이온 주입기가 개시된다. 탠덤 가속기는 복수의 입력 전극들, 복수의 출력 전극들 및 그 사이에 배치되는 고 전압 단자를 포함한다. 고 전압 단자는 스트리퍼 튜브를 포함한다. 중성 분자들은, 인입 네거티브 이온 빔으로부터 전자들을 제거하는 스트리퍼 튜브 내로 주입된다. 결과적인 포지티브 이온들이 복수의 출력 전극들을 향해 가속된다. 스트리퍼 튜브를 빠져 나오는 희망되지 않는 포지티브 이온들의 양을 감소시키기 위하여 바이어스 전극이 스트리퍼 튜브의 입구 및 출구에 배치된다. 바이어스 전극들은, 단자에 인가되는 제 1 전압보다 더 큰 제 2 전압으로 바이어싱된다. 바이어스 전극들은 느리게 움직이는 포지티브 이온들을 반사하며, 이는 이들이 스트리퍼 튜브를 빠져 나가는 것 및 작업물을 오염시키는 것을 방지한다.

Metrology tool and using the same and charged particle detection system

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.

Inspection device

An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object.

Systems and Methods for Particle Pulse Modulation

Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses. 1. A method for modulating a particle pulse , the method comprising:A) propagating the particle pulse at a velocity v along a first direction, the particle pulse comprising at least one of a plurality of charged particles or a plurality of polarizable neutral particles;{'sub': '1', 'B) propagating a first electromagnetic pulse along a second direction at a first oblique angle θwith respect to the first direction in a laboratory frame of reference so as to cause the first electromagnetic pulse to at least partially overlap with the particle pulse; and'}{'sub': '2', 'C) propagating a second electromagnetic pulse along a third direction at a second oblique angle θwith respect to the first direction in the laboratory frame of reference so as to cause the second electromagnetic pulse to at least partially overlap with the particle pulse,'}{'sub': 2', '1, 'wherein the second oblique angle θis based at least in part on the first oblique angle θ.'}2. The method of claim 1 , wherein the second electromagnetic pulse propagates in a plane defined by the first ...

SCANNING ELECTRON MICROSCOPE OBJECTIVE LENS SYSTEM AND METHOD FOR SPECIMEN OBSERVATION

A scanning electron microscope objective lens system is disclosed, which includes: a magnetic lens, a deflection device, a deflection control electrode, specimen to be observed, and a detection device; in which, The opening of the pole piece of the magnetic lens faces to the specimen; the deflection device is located in the magnetic lens, which includes at least one sub-deflector; the deflection control electrode is located between the detection device and the specimen, and the deflection control electrode is used to change the direction of the primary electron beam and the signal electrons generating from the specimen; the detection device comprises the first sub-detector for detecting the back-scattered electrons and the second sub-detector for detecting the second electrons. A specimen detection method is also disclosed.

SCANNING ELECTRON MICROSCOPE AND ELECTRON TRAJECTORY ADJUSTMENT METHOD THEREFOR

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens primary electron acceleration means that accelerates primary electrons primary electron deceleration means that decelerates the primary electrons and irradiates them to a sample a secondary electron deflector that deflects secondary electrons from the sample to the outside of an optical axis of the primary electrons; a spectroscope that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope. 1. A scanning electron microscope comprising:an electron source;an objective lens that converges primary electrons emitted from the electron source on a sample;primary electron acceleration means that accelerates the primary electrons and passes them through the objective lens;primary electron deceleration means that decelerates the primary electrons and irradiates them to the sample;a secondary electron deflector that deflects secondary electrons from the sample, caused from the primary electrons converged with the objective lens, to the outside of an optical axis of the primary electrons;a spectroscope for dispersion of the secondary electrons;a detector that detects secondary electrons passed through the spectroscope; anda controller that controls application voltage to at least one of the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope, with a lens formed with the objective lens, the primary electron acceleration means and the primary electron deceleration means.2. ...

Ladungsträgerstrahlvorrichtung

Es ist eine Aufgabe der Erfindung, einen Elektronenstrahl von einer Elektronenkanone stabil zu liefern, d. h., eine Schwankung der Intensität des Elektronenstrahls zu verhindern. Die Erfindung schafft eine Ladungsträgerstrahlvorrichtung, die eine Elektronenkanone, die eine Elektronenquelle, eine Extraktionselektrode, an die eine Spannung angelegt ist, die zum Extrahieren der Elektronen von der Elektronenquelle verwendet wird, und eine Beschleunigungselektrode, an die eine Spannung angelegt ist, die zum Beschleunigen der von der Elektronenquelle extrahierten Elektronen verwendet wird, aufweist, eine erste Heizeinheit, die die Extraktionselektrode erwärmt, und eine zweite Heizeinheit, die die Beschleunigungselektrode erwärmt, enthält.

Accelerator system for mineral component analysis, system and method for mineral component analysis

Abstract The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray.

APPARATUS FOR GENERATING ELECTRON BEAMS, AND METHOD FOR MANUFACTURING SAME

The present invention relates to an apparatus for generating an electron beam, comprising: a cathode; a housing which has an opening formed at one side thereof such that the cathode is coupled to the opening, and which has a resonant cavity formed therein; and a gasket interposed between the cathode and the housing such that the gasket is compressed in accordance with the coupling strength between the cathode and the housing so as to shut off the resonant cavity from the outside.

Bias electrodes for tandem accelerator

A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece.

PARTICLE BEAM IRRADIATION APPARATUS AND PARTICLE BEAM THERAPY SYSTEM

A scanning power source that outputs the excitation current for a scanning electromagnet and an irradiation control apparatus that controls the scanning power source; the irradiation control apparatus is provided with a scanning electromagnet command value learning generator that evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, that updates the command value for the excitation current, when the result of the evaluation does not satisfy a predetermined condition, so as to perform the run-through, and that outputs to the scanning power source the command value for the excitation current such that its evaluation result has satisfied the predetermined condition. 118-. (canceled)19. A particle beam irradiation apparatus comprising:a scanning electromagnet that scans a charged particle beam accelerated by an accelerator and has a hysteresis;a scanning power source that outputs an excitation current for driving the scanning electromagnet; andan irradiation control apparatus that controls the scanning power source, wherein the irradiation control apparatus has a scanning electromagnet command value learning generator that (i) has a mathematical model for generating a command value for the excitation current, (ii) evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, and (iii) updates the mathematical model, based on the result of the evaluation, (iv) accumulates experiences in the run-through, and (v) outputs to the scanning power source the command value for the excitation current to be generated, based on the accumulated experiences of the run-through, by the mathematical model.20. The particle beam irradiation apparatus according to claim 19 , wherein the scanning electromagnet command value learning generator that includes ...

Charged Particle Beam Device, and Observation Method and Elemental Analysis Method Using the Same

A charged particle beam device capable of easily discriminating the energy of secondary charged particles is realized. The charged particle beam device includes a charged particle source, a sample stage on which a sample is placed, an objective lens that irradiates the sample with a charged particle beam from the charged particle source, a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam, a detector that detects the secondary charged particles deflected by the deflector, a sample voltage control unit that applies a positive voltage to the sample or the sample stage, and a deflection intensity control unit that controls the intensity with which the deflector deflects the secondary charged particles. 1. A charged particle beam device comprisinga charged particle source;a sample stage on which a sample is placed;an objective lens that irradiates the sample with a charged particle beam from the charged particle source;a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam;a detector that detects the secondary charged particles deflected by the deflector;a sample voltage control unit that applies a positive voltage to the sample or the sample stage; anda deflection intensity control unit that controls an intensity with which the deflector deflects the secondary charged particles.2. The charged particle beam device according to claim 1 , whereinthe detector detects the secondary charged particles in an energy range determined by the positive voltage applied to the sample or the sample stage by the sample voltage control unit and the intensity of deflecting the secondary charged particles controlled by the deflection intensity control unit.3. The charged particle beam device according to claim 2 , further comprising:an image formation control unit that forms an image based on the secondary charged particles detected by the detector.4. The ...

PARTICLE BEAM IRRADIATION APPARATUS AND PARTICLE BEAM TREATMENT APPARATUS

Disclosed is a particle beam irradiation apparatus which achieves high precision beam irradiation in raster scanning and hybrid scanning by eliminating the influence of hysteresis in the scanning electromagnets. The particle beam irradiation apparatus is provided with a scanning power supply (4) for outputting exciting currents to the scanning electromagnets (3), and an irradiation control device (5) for controlling the scanning power supply (4), wherein the irradiation control device (5) includes a scanning electromagnet command value learning generator (37) which evaluates the results of a run-through consisting of a series of irradiation operations performed in accordance with an exciting current command value (Ik) output to the scanning power supply (4), and wherein the scanning electromagnet command value learning generator (37) updates the exciting current command value (Ik) and performs a run-through again if the evaluation results do not satisfy predetermined conditions, or outputs ...

Electron beam generator, plasma processing apparatus having the same and plasma processing method using the same

An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.

APPARATUS AND METHOD FOR OBSERVING SPECIMEN

Composite charged particle beam device and control method thereof

The invention provides a composite charged particle beam device and a control method, which can set the value of the voltage of a beam booster of a convergent ion beam according to the expected acceleration voltage of the convergent ion beam. The composite charged particle beam device is provided with an ion supply part supplying an ion beam; an acceleration voltage application part applying an acceleration voltage to the ion beam supplied by the ion supply part to accelerate the ion beam; a first focusing part focusing the ion beam; a beam booster voltage application part applying a beam booster voltage to the ion beam; a second focusing part focusing the ion beam to irradiate a sample; an electron beam emission part emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application part applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration ...

RF resonator for ion beam acceleration

An RF feedthrough has an electrically insulative cone that is hollow having first and second openings at first and second ends having first and second diameters. The first diameter is larger than the second diameter, defining a tapered sidewall of the cone to an inflection point. A stem is coupled to the second end of the cone, and passes through the first opening and second opening. A flange is coupled to the first end of the cone and has a flange opening having a third diameter. The third diameter is smaller than the first diameter. The stem passes through the flange opening without contacting the flange. The flange couples the cone to a chamber wall hole. Contact portions of the cone may be metallized. The cone and flange pass the stem through the hole while electrically insulating the stem from the wall of the chamber.

Charged particle beam device

A purpose of the present invention is to provide a charged particle beam device that suppresses an off-axis amount when a field of view moves, said move causing an aberration, and allows large field of view moves to be carried out. In order to achieve the above-mentioned purpose, this charged particle beam device is provided with an objective lens and deflectors for field of view moves, said deflectors deflecting a charged particle beam, and is further provided with an accelerating tube positioned between the objective lens and the deflectors for field of view moves, a power source that applies a voltage to the accelerating tube, and a control device that controls the voltage to be applied to the power source in response to the deflection conditions of the deflectors for field of view moves.

Boron-Containing Dopant Compositions, Systems and Methods of Use Thereof For Improving Ion Beam Current and Performance During Boron Ion Implantation

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Charged particle beam device and electrostatic lens

To provide a charged particle beam device capable of preventing generation of geometric aberration by aligning axes of electrostatic lenses with high accuracy even when center holes of respective electrodes which constitute the electrostatic lens are not disposed coaxially. The charged particle beam device according to the invention includes an electrostatic lens disposed between an acceleration electrode and an objective lens, wherein at least one of the electrodes which constitutes the electrostatic lens is formed of a magnetic body, and two or more magnetic field generating elements are disposed along an outer periphery of the electrode.

Ion implanter, ion beam irradiated target, and ion implantation method

PLASMA SOURCE AND PLASMA PROCESSING APPARATUS

A plasma source which is capable of supplying a plasma processing space with plasma in a state where gas is sufficiently ionized is a device for supplying plasma to a plasma processing space in which a process using the plasma is performed, and includes: a plasma generation chamber; an opening that allows the plasma generation chamber to communicate with the plasma processing space; a radio-frequency antenna that is a coil of less than one turn provided in a position where a radio-frequency electromagnetic field having predetermined strength required to generate plasma is able to be generated in the plasma generation chamber; voltage application electrodes in a position close to the opening in the plasma generation chamber; and a gas supply unit (pipe) that supplies plasma source gas to a position closer to the side opposite to the opening than the voltage application electrodes in the plasma generation chamber.

ION IMPLANTER AND METHOD OF CONTROLLING ION IMPLANTER

A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution. 1. An ion implanter comprising:an ion beam generating unit that includes an ion source, an extraction electrode, and a mass analyzer, a mass analyzing magnet that applies a magnetic field to ions extracted from the ion source by the extraction electrode to deflect the ions,', 'a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and', 'a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies at least one of a magnetic field and an electric field to the ion beam directed toward the mass analyzing slit to adjust the convergence or divergence of a ion beam, and, 'wherein the mass analyzer includes'}the mass analyzer changes a focal point of the ion beam, which passes through the mass analyzing slit, in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.2. The ion implanter according to claim 1 ,wherein the mass analyzer defocuses the ion, which passes through the mass analyzing slit, with the lens device so that the focal point of the ion beam is present on a downstream side of the ...

Apparatus of electron beam comprising pinnacle limiting plate and method of reducing electron-electron interaction

The present invention provides an apparatus of electron beam comprising an electron gun with a pinnacle limiting plate having at least one current-limiting aperture. The pinnacle limiting plate is located between a bottom (or lowest) anode and a top (or highest) condenser within the electron gun. A current (ampere) of the electron beam that has passed through the current-limiting aperture remains the same (unchanged) after the electron beam travels through the top condenser and an electron optical column and arrives at a sample space. Electron-electron interaction of the electron beam is thus reduced.

DETECTION SYSTEMS IN SEMICONDUCTOR METROLOGY TOOLS

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system , a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time. 1. A metrology tool , comprising:a particle generation system configured to remove a particle from a sample;a local electrode configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode;a particle capture device configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture;a position detector configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle; anda processor configured to identify the removed particle based on the flight time.2. The metrology tool of claim 1 , wherein the particle capture device is positioned between the sample and the local electrode to enclose a top portion of the sample claim 1 , a bottom portion of the local electrode claim 1 , and the region between the sample and the local electrode.3. The metrology tool of claim 2 , wherein the particle capture device is not in physical contact with the top portion and the bottom portion.4. ...

ELECTRON BEAM APPARATUS

A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam, to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.

VORRICHTUNG ZUM ERZEUGEN VON ELEKTRONENSTRAHLEN UND VERFAHREN ZUM HERSTELLEN DERSELBEN

Die vorliegende Erfindung bezieht sich auf eine Vorrichtung zum Erzeugen eines Elektronenstrahls, die Folgendes aufweist: eine Kathode; ein Gehäuse, das eine an einer Seite desselben gebildete Öffnung aufweist, so dass die Kathode mit der Öffnung gekoppelt ist, und in dem ein Resonanzhohlraum gebildet ist; und eine Dichtung, die derart zwischen der Kathode und dem Gehäuse angeordnet ist, dass die Dichtung gemäß der Kopplungsfestigkeit zwischen der Kathode und dem Gehäuse zusammengedrückt wird, um den Resonanzhohlraum von außen abzuschließen.

PARTICLE BEAM IRRADIATION APPARATUS AND PARTICLE BEAM THERAPY SYSTEM

The objective is to eliminate the effect of the hysteresis of a scanning electromagnet so that, in the raster scanning or the hybrid scanning, there is obtained a particle beam irradiation apparatus that realizes high-accuracy beam irradiation. There are provided a scanning power source that outputs the excitation current for a scanning electromagnet and an irradiation control apparatus that controls the scanning power source; the irradiation control apparatus is provided with a scanning electromagnet command value learning generator that evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, that updates the command value for the excitation current, when the result of the evaluation does not satisfy a predetermined condition, so as to perform the run-through, and that outputs to the scanning power source the command value for the excitation current such that its evaluation ...

Inspection Apparatus and Inspection Method

When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by "acceleration voltage-deceleration voltage" and bias voltage determined by "deceleration voltage-control voltage" do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by "acceleration voltage-deceleration voltage" and bias voltage determined by "deceleration voltage-control voltage" do not change.

METHODS, SYSTEMS AND APPARATUS FOR ACCELERATING LARGE PARTICLE BEAM CURRENTS

Systems and methods for accelerating large particle beam currents in an electrostatic particle accelerator are provided. A system may include a process ion source that is configured to emit ions, a particle accelerator and a target. The particle accelerator may include multiple conductive electrodes that are serially arranged to define a particle path between the process ion source and the target and multiple accelerator tubes arranged to further define the particle path between the process ion source, ones of the conductive electrodes and the target. 1. A system comprising:a process ion source that is configured to emit ions;a particle accelerator; anda target, a conductive electrode that includes an interior space and that is configured to be charged to a high-voltage electrical potential;', 'a first charging device that is configured to deliver a charging current to the conductive electrode to charge the conductive electrode to a given polarity and a given magnitude;', 'a second charging device that is configured to generate a voltage stabilizing current to the conductive electrode that corresponds to an ion current of the process ion source that is within the interior space of the conductive electrode; and', 'an accelerator tube positioned between the process ion source and the target and that includes a particle receiving end that is galvanically coupled to the conductive electrode and a particle exit end that is opposite the particle receiving end and that is galvanically coupled to a negative ion or electron source, and, 'wherein the particle accelerator compriseswherein the particle accelerator accelerates the ions emitted from the process ion source to produce accelerated ions that bombard the target.2. The system according to claim 1 , wherein the conductive electrode comprises a hollow metal shell claim 1 , andwherein the negative ion or electron source comprises an earth ground.3. The system according to claim 1 , wherein the accelerator tube comprises ...

HIGH FREQUENCY RF GENERATOR AND DC PULSING

A nanosecond pulser system is disclosed. In some embodiments, the nanosecond pulser system may include a high voltage power supply; a nanosecond pulser electrically coupled with the high voltage power supply and switches voltage from the high voltage power supply at high frequencies; a transformer having a primary side and a secondary side, the nanosecond pulser electrically coupled with the primary side of the transformer; and an output electrically coupled with the transformer producing a waveform. In some embodiments, the waveform includes a plurality of high voltage pulses having a pulse amplitude greater than about 2 kV, a pulse width, and a pulse repetition frequency; and a sinusoidal waveform having a waveform frequency and a waveform amplitude greater than 100 V.

기판 프로세싱 시스템, 이온 주입 시스템, 및 빔라인 이온 주입 시스템

... 기판 프로세싱 시스템, 이온 주입 시스템, 및 빔라인 이온 주입 시스템이 제공된다. 텍스처링된 실리콘 라이너들을 갖는, 이온 주입 시스템들, 증착 시스템들 및 에칭 시스템들과 같은 기판 프로세싱 시스템들이 개시된다. 실리콘 라이너들은, 20 마이크로미터 미만의 높이일 수 있는 마이크로피라미드(micropyramid)들로서 지칭되는 작은 특징부들을 생성하는 화학적 처리를 사용하여 텍스처링된다. 이러한 마이크로피라미드들이 흑연 라이너들에서 일반적으로 발견되는 텍스처링된 특징부들보다 훨씬 더 작다는 사실에도 불구하고, 텍스처링된 실리콘은 증착된 코팅들을 홀딩하고 조각으로 벗겨지는 것에 저항할 수 있다.

Secondary charged particle analyzing apparatus and secondary charged particle extracting section

In a secondary charged particle analyzing apparatus such as a secondary ion mass analyzing apparatus, a scanning type electron mass analyzer, etc., in order to obtain a high resolving power and a high sensitivity, trajectories of secondary charged particles are corrected by means of an accelerating lens formed in a secondary charged particle extracting section disposed within the apparatus.

Photoelectron generation apparatus

This invention provides an inspection apparatus which improves the inspection accuracy and is suitable for a design rule of 5 to 30nm. The inspection apparatus includes a beam generation means for generating charged particles or an electromagnetic wave as a beam, a first optical system for directing the above said beam to an object to be inspected which is held in a working chamber, a moveable numerical aperture, a second optical system having a first detector for detecting secondary charged particles generated from the object to be inspected and passing through the numerical aperture, an image processing system for forming an image based on the secondary charged particles detected by the first detector, and a second detector arranged between the moveable numerical aperture and the first detector and for detecting the position and the form of the secondary charged particles at the cross over position, the secondary charged particles being generated from the object to be inspected.

Inspection device

An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object.

RESONATOR COIL HAVING AN ASYMMETRICAL PROFILE

Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

Photocathode high-frequency electron-gun cavity apparatus

A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity ( 1 ), a photocathode ( 8, 15 ), a laser entering port ( 9 ), a high-frequency power input coupler port ( 10 ), and a high-frequency resonant tuner ( 16 ). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell ( 5 ) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.

Textured Silicon Liners In Substrate Processing Systems

Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

HIGH-CURRENT ION IMPLANTER AND METHOD FOR CONTROLLING ION BEAM USING HIGH-CURRENT ION IMPLANTER

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens. 1. An ion implantation system , comprising:an electrostatic lens receiving an ion beam, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line; anda power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.2. The ion implantation system of claim 1 , further comprising a plasma flood gun positioned between the electrostatic lens and a wafer claim 1 , wherein the plasma flood gun and the wafer are oriented at an angle relative to the ion beam line.3. The ion implantation system of claim 2 , wherein the wafer is grounded claim 2 , and wherein a mass analyzer and a collimator along the ion beam line are at a positive potential.4. The ion implantation system of claim 3 , wherein the ...

Method and apparatus for directing a neutral beam

The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.

SCANNING ION MICROSCOPE AND SECONDARY PARTICLE CONTROL METHOD

The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image. 1. A scanning ion microscope comprising:an ion source;a specimen stage configured to hold a specimen;an ion optical system configured to cause ions emitted from the ion source converge on the specimen and make deflection of the converged ions to a given position on the specimen;an ion controller configured to control the ion optical system;a secondary particle detector configured to detect a secondary particle emitted from the specimen; andan image processing unit configured to form an image in which by a signal from the secondary particle detector corresponds to the deflection of the converged ions, and store the image in a storage unit and displays the image on a display unit; wherein the scanning ion microscope further comprises:a support member, which is electrically-conductive, configured to support a thin film which is irradiated with the ions, is disposed between the ion optical system and the specimen; anda potential control unit configured to control a first electric potential, which is an electric potential of the support member.2. The scanning ion microscope according to claim 1 , further comprising an electrode potential control unit configured to control a second electric potential claim 1 , which is an electric potential of an electrode that is disposed between the thin film and the specimen claim 1 , the electrode ...

CHARGED PARTICLE BEAM DEVICE AND POWER SUPPLY DEVICE

The invention provides a power supply device and a charged particle beam device capable of reducing noise generated between a plurality of voltages. The charged particle beam device includes a charged particle gun configured to emit a charged particle beam, a stage on which a sample is to be placed, and a power supply circuit configured to generate a first voltage and a second voltage that determine energy of the charged particle beam and supply the first voltage to the charged particle gun. The power supply circuit includes a first booster circuit configured to generate the first voltage, a second booster circuit configured to generate the second voltage, and a switching control circuit configured to perform switching control of the first booster circuit and the second booster circuit using common switch signals.

METHOD OF ENHANCING THE ENERGY AND BEAM CURRENT ON RF BASED IMPLANTER

Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece. 1. A high energy ion implantation system , comprising:an ion beam source configured to generate an ion beam comprising a plurality of ions along a beamline;a mass analyzer configured to mass analyze the ion beam;a first RF accelerator configured to receive the ion beam from the mass analyzer, wherein the plurality of ions are at an initial energy and an initial charge state, wherein the first RF accelerator is further configured to accelerate the plurality of ions to a first energy at the initial charge state;an electron stripper positioned downstream of the first RF accelerator and configured to receive the plurality of ions at the initial charge state and first energy and to convert the plurality of ions to a plurality of charge states at the first energy;a charge selector positioned downstream of the electron stripper and configured to select a final charge state at the first energy from the plurality of charge states of the plurality of ions;a second RF accelerator positioned downstream of the charge selector and configured to accelerate the plurality of ions to a final energy spectrum at the final charge state; anda final energy filter positioned downstream of the second RF accelerator and configured to purify the plurality of ...

ION IMPLANTATION APPARATUS, BEAM PARALLELIZING APPARATUS, AND ION IMPLANTATION METHOD

An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens. 1. An ion implantation apparatus comprising:a beam parallelizing unit comprising an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction; anda power supply unit configured to operate the beam parallelizing unit under one of a plurality of energy settings, whereinthe plurality of energy settings includes a first energy setting suitable for transport of a low energy ion beam, and a second energy setting suitable for transport of a high energy ion beam,the power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting and to generate a potential difference in at least the deceleration lens under the first energy setting, anda curvature of the deceleration lens is smaller than a curvature of the acceleration lens.2. The ion implantation apparatus according to claim 1 , whereinthe power supply unit applies a second acceleration voltage to the acceleration lens and applies no potential difference in the deceleration lens under the second energy setting ...

BIAS ELECTRODES FOR TANDEM ACCELERATOR

A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece. 1. A tandem accelerator , comprising:a plurality of input electrodes;a plurality of output electrodes;a terminal, disposed between an innermost electrode of the plurality of input electrodes and an innermost electrode of the plurality of output electrodes, the terminal biased at a first voltage;a stripper tube disposed in the terminal, having an inlet proximate the plurality of input electrodes, an outlet proximate the plurality of output electrodes, and an injection conduit for introduction of a stripper gas; anda first bias electrode disposed between the outlet of the stripper tube and the innermost electrode of the plurality of output electrodes, the first bias electrode biased at a second voltage, more positive than the first voltage.2. The tandem accelerator of claim 1 , wherein the first bias electrode is disposed within the terminal.3. The tandem accelerator of claim 1 , wherein the first bias electrode is disposed outside of the terminal.4. The tandem accelerator of claim 1 , wherein an outermost electrode of the plurality of input electrodes is grounded claim 1 , and each adjacent input electrode is ...

Compensated Location Specific Processing Apparatus And Method

An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing. 1. An apparatus for processing a workpiece with a beam , comprising:a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam;a scanner for translating the workpiece through the particle beam;a scanner control circuit configured to control at least one scan property of the scanner; anda beam control circuit configured to control the beam flux of the particle beam according to a duty cycle for the particle beam;a control system including a controller coupled with the scanner control circuit and beam control circuit, the control system configured for processing parametric data associated with at least one attribute of at least a portion of the workpiece for use in corrective processing of the workpiece;the controller configured to instruct the scanner control circuit and instruct the beam control circuit in corrective processing of the workpiece to alter at least one workpiece attribute;the controller further configured to controllably vary the duty cycle through the beam control circuit for addressing a limitation in controlling a scan property of the scanner and thereby expand the dynamic range of the beam processing.2. The apparatus of claim 1 , wherein the particle beam includes a charged particle beam or an un-charged particle beam.3. The apparatus of claim 2 , where ...

ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source. 1. An ion implantation apparatus comprising:an ion source configured to generate an ion beam;a scanner configured to change an irradiation position with the ion beam on an irradiation target;a first electrode configured to accelerate an ion in the ion beam; anda controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.2. The apparatus of claim 1 , further comprising a plurality of second electrodes provided on a side of a subsequent stage of the first electrode and configured to accelerate the ion in the ion beam claim 1 ,wherein the controller changes the energy of the ion beam according to the irradiation position by controlling voltages to be applied to the plurality of second electrodes for each of the second electrodes.3. The apparatus of claim 2 , wherein the plurality of second electrodes are disposed to be adjacent to each other in a direction parallel to a front surface of the irradiation target.4. The apparatus of claim 2 , wherein the plurality of second electrodes are disposed to be shifted from each other in a direction parallel to a front surface of the irradiation target.5. The apparatus of claim 1 , further comprising a second electrode provided on a side of a subsequent stage of the first electrode and configured to accelerate the ion in the ...

Particle-Optical Systems and Arrangements and Particle-Optical Components for such Systems and Arrangements

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

Charged Particle Beam Device and Analysis Method

A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen. 1. A charged particle beam device comprising:a charged particle beam source;an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source;a bias voltage applying unit that applies a bias voltage to the specimen; andan analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.2. The charged particle beam device according to claim 1 , wherein the analysis unit obtains a difference between the first spectrum and the second spectrum and extracts a signal component of the secondary electrons based on the difference.3. The charged particle beam device according to claim 1 , further comprising a deflector that scans the specimen with the primary ...

Method and Apparatus to Eliminate Contaminant Particles from an Accelerated Neutral Atom Beam and Thereby Protect a Beam Target

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target. 1. In the method of ANAB processing of target substrate surfaces , the improvement comprising providing a contaminant particle elimination step in an ANAB process of deriving a neutral beam comprising energetic monomers from a GCIB , which has been subjected to a primary (first) ionization step and accelerated under conditions subject to entraining contaminant particles in the neutral beam and providing an assembly for deflecting or blocking contaminant particles therein , if any , such that no paths of the neutral beam to the target substrate surface to be processed exist other than through the assembly.2. The improved method of wherein the step of deflecting or blocking includes a secondary electron ionization step which is implemented without detrimentally influencing the primary ionization by employing positive offset voltages and a surrounding ground screen to prevent electrons from escaping.3. The improved method of wherein a retarding field is employed in the assembly to block ionized particles from travelling to the target substrate surface.4. The improved method of wherein an electrostatic deflector is employed in the assembly to remove ionized particles from the path to the target substrate surface.5. A method of processing a substrate target surface for one or more of etching claim 1 , smoothing planarization or other modification of the substrate target surface claim 1 , comprising the steps of:(a) forming gas cluster ions by a primary (first) ionization step in a reduced pressure ambient in a chamber,(b) accelerating the gas cluster ions to form an accelerated gas cluster ion beam (GCIB) along a beam path ...

Electron emission tube, electron irradiation device, and method of manufacturing electron emission tube

An electron emission tube includes a housing in which an internal space is provided and which keeps the internal space in vacuum, an electron source that is arranged on a first end side in one direction of the housing and that generates an electron, a gate valve that is arranged on a second end side in the one direction of the housing and that can switch the second end side between an open state and a blocked state, and a partition part that is placed between the electron source and the gate valve and that divides the internal space into a first region including the electron source and a second region including the gate valve. The partition part includes an electron-permeable membrane that transmits an electron.

Multi-electron-beam imaging apparatus with improved performance

A multi-electron beam imaging apparatus is disclosed herein. An example apparatus at least includes an electron source for producing a precursor electron beam, an aperture plate comprising an array of apertures for producing an array of electron beams from said precursor electron beam, an electron beam column for directing said array of electron beams onto a specimen, where the electron beam column is configured to have a length less than 300 mm, and where the electron beam column comprises a single individual beam crossover plane in which each of said electron beams forms an intermediate image of said electron source, and a single common beam crossover plane in which the electron beams in the array cross each other.

MEDIUM CURRENT RIBBON BEAM FOR ION IMPLANTATION

A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA. 1. A method of setting up a medium current ribbon beam for ion implantation , comprising:providing an ion source fed with a process gas and a support gas; andadjusting the ion source with a desired ratio of the process gas and the support gas to control the source plasma density of a process ion beam of the ion source.2. The method of setting up a medium current ribbon beam for ion implantation according to claim 1 , further comprising: adjusting the source plasma density to match a source extraction voltage and a source extraction gap.3. A method of setting up a medium current ribbon beam for ion implantation comprising:operating at least one current limiting device located downstream of an ion source to control the source plasma density of a process ion beam of the ion source.4. The method of setting up a medium current ribbon beam for ion implantation according to claim 3 , wherein the current limiting device operates by mechanically limiting passage of the process ion beam by means of a variable slit or aperture.5. The method of setting up a medium current ribbon beam for ion implantation according to claim 3 , further comprising: setting a mass analyzer to select the mass of process ions in the process ion beam.6. The method of setting up a medium current ribbon beam for ion implantation according ...

Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD

A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit. 1. A high energy ion implanter comprising:a high energy multistage linear acceleration unit;a beamline component arranged upstream or downstream of the high energy multistage linear acceleration unit to form a focus point of an ion beam; anda variable aperture device disposed at the focus point or a vicinity thereof to adjust a beam width of the ion beam in a direction perpendicular to a focusing direction of the ion beam at the focus point in order to control an implanting beam current.2. The high energy ion implanter according to claim 1 , wherein the beamline component is arranged so that the focus point is formed upstream of the high energy multistage linear acceleration unit claim 1 ,wherein the variable aperture device is disposed downstream of the beamline component so that the ion beam having the beam width adjusted in the direction perpendicular to the focusing direction as a result of passing through the variable aperture device is supplied to the high energy multistage linear acceleration unit.3. The high energy ion implanter according to claim 1 , wherein the beamline component is a mass analyzer comprising a mass analysis slit claim 1 , and the variable aperture device is disposed immediately downstream of the mass analysis slit.4. The high energy ion implanter according to claim 1 , further comprising a control device that adjusts the beam width in the direction perpendicular to the ...

Ion implanter and ion implantation method

Provided is an ion implanter including an ion source that generates ions, an extraction unit that generates an ion beam by extracting the ions from the ion source and accelerating the ions, a linear acceleration unit that accelerates the ion beam extracted and accelerated by the extraction unit, an electrostatic acceleration/deceleration unit that accelerates or decelerates the ion beam emitted from the linear acceleration unit, and an implantation processing chamber in which implantation process is performed by irradiating a workpiece with the ion beam emitted from the electrostatic acceleration/deceleration unit.

ION IMPLANTER AND ELECTROSTATIC QUADRUPOLE LENS DEVICE

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port. 1. An ion implanter comprising:a high energy multistage linear acceleration unit for accelerating an ion beam,wherein the high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline, a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction in which the beamline extends while the beamline is interposed between the plurality of lens electrodes facing each other, and disposed at an interval in a circumferential direction perpendicular to both the axial direction and the radial direction,', 'an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes, and including a beam incident port opening in the axial direction, and', 'a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes, and including a beam exiting port opening in the axial ...

DRAWING APPARATUS, DRAWING METHOD, AND METHOD FOR FABRICATING ARTICLE

A drawing apparatus, and one or more methods, of the present invention include a data generation unit which generates drawing data representing amounts of irradiation of a beam to a plurality of unit regions on a substrate, and a beam controller which controls the beam based on a clock signal in a constant speed interval and in at least one of an acceleration interval and a deceleration interval of a stage driven while holding the substrate. The data generation unit generates drawing data based on driving data and a clock signal commonly used in the constant speed interval and in at least one of the acceleration interval and the deceleration interval. The beam controller draws a pattern on the substrate based on the drawing data. 1. A drawing apparatus comprising:a data generation unit configured to generate drawing data representing amounts of irradiation of a beam to a plurality of unit regions on a substrate; anda beam controller configured to control the irradiation of the beam based on a clock signal in a constant speed interval and in at least one of an acceleration interval and a deceleration interval of a stage which is driven while holding the substrate,wherein the data generation unit generates the drawing data based on driving data of the stage and the clock signal which is commonly used in the constant speed interval and in at least one of the acceleration interval and the deceleration interval, and the beam controller draws a pattern on the substrate using the drawing data.2. The drawing apparatus according to claim 1 , whereinthe irradiation amounts are represented by a combination of irradiation data and non-irradiation data, andthe data generation unit generates the drawing data using a larger amount of the non-irradiation data for the unit regions drawn in at least one of an acceleration interval and a deceleration interval than the non-irradiation data for the unit regions in the constant speed interval.3. The drawing apparatus according to claim 1 ...

CIRCULAR ACCELERATOR AND PARTICLE BEAM THERAPY APPARATUS

One embodiment of a particle circular accelerator includes: a beam deflector for beam injections, bending electromagnets that causes the beam injected from the beam deflector for beam injections to circulate so as to form a circulation orbit, orbit adjusting electromagnets for injected beams that shift the position of each injected beam relative to the center of the circulation orbit of the beam, quadrupole electromagnets and sextupole electromagnets that adjust their respective quantities of magnetic excitation at the time of a beam extraction so as to extract a beam in a resonant region off a stable reason of beams and a beam deflector for beam extractions that takes out the beam extracted from the resonant region to the outside. The circular accelerator injects beams from the inner side thereof and emits beams to the outer side thereof. 1. A circular accelerator comprising:a beam deflector for receiving beam injections and deflecting the beam;beam bending electromagnets for forming a circulation orbit by causing the beam injected from the beam deflector for beam injections to circulate;orbit adjusting electromagnets for adjusting orbit of an injected beam adapted to shift the position of each injected beam relative to center of the circulation orbit of the beam;beam extraction electromagnets adapted to adjust their respective quantities of magnetic excitation at time of extraction of a charged particle beam and operate to draw out a charged particle beam in a resonant region located off a stable region of charged particle beams; anda beam deflector for beam extractions adapted to draw out the beam extracted from the resonant region to outside;the circular accelerator being adapted to inject the beam from inner side and extract the beam to outer side of the circular accelerator.2. The circular accelerator according to claim 1 , further comprising:orbit adjusting electromagnets adapted to bring the orbit of a beam to be extracted closer to the outer side of the ...

Focused Ion Beam Low kV Enhancement

The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

STRUCTURE ANALYSIS METHOD USING A SCANNING ELECTRON MICROSCOPE

A structure analysis method using a scanning electron microscope includes irradiating a sample with an electron beam having a first landing energy to obtain a first image at a first depth of the sample and accelerating the electron beam to have a second landing energy higher than the first landing energy to obtain a second image at a second depth of the sample. 1. A structure analysis method using a scanning electron microscope , comprising:irradiating a sample with an electron beam having a first landing energy to obtain a first image at a first depth of the sample; andaccelerating the electron beam to have a second landing energy higher than the first landing energy to obtain a second image at a second depth of the sample.2. The structure analysis method of claim 1 ,wherein the irradiating of the sample with the electron beam includes scanning the sample along two-dimensional coordinates.3. The structure analysis method of claim 2 ,wherein the first image is a frame unit image obtained at the first depth, and the second image is a frame unit image obtained at the second depth; andthe method further includes obtaining a three-dimensional image using the first and second images.4. The structure analysis method of claim 3 ,wherein the obtaining of the three-dimensional image includes laminating the first and second images to correspond to the first and second depths.5. The structure analysis method of claim 1 ,wherein the first and second images are images obtained by collecting electronic signals emitted from the sample by the electron beam applied to the sample.6. The structure analysis method of claim 5 ,wherein the first image is a dot unit image at the first depth, and the second image is a dot unit image at the second depth; andthe method further includes measuring a change of the electronic signals using the first and second images and analyzing a change of the material constituting the sample at the first and second depths.7. The structure analysis method of ...

Charged Particle Beam Device and Electrostatic Lens

To provide a charged particle beam device capable of preventing generation of geometric aberration by aligning axes of electrostatic lenses with high accuracy even when center holes of respective electrodes which constitute the electrostatic lens are not disposed coaxially. The charged particle beam device according to the invention includes an electrostatic lens disposed between an acceleration electrode and an objective lens, wherein at least one of the electrodes which constitutes the electrostatic lens is formed of a magnetic body, and two or more magnetic field generating elements are disposed along an outer periphery of the electrode. 1. A charged particle beam device which emits a charged particle beam to a sample , the charged particle beam device comprising:a charged particle source which emits the charged particle beam;an acceleration electrode which accelerates the charged particle beam emitted by the charged particle source;an objective lens which focuses the charged particle beam on the sample;an electrostatic lens which is disposed between the acceleration electrode and the objective lens; anda deflector which is disposed between the acceleration electrode and the electrostatic lens, whereinat least one of electrodes which constitutes the electrostatic lens is formed of a magnetic body, andthe charged particle beam device further comprising:a magnetic field generating element which is magnetically connected to the electrode and generates a magnetic field having a function of deflecting the charged particle beam, whereintwo or more magnetic field generating elements are disposed along an outer periphery of the electrode.2. The charged particle beam device according to claim 1 , whereinthe magnetic field generating element is magnetically connected to the electrode by being in contact with and attached to the electrode.3. The charged particle beam device according to claim 2 , whereinthe magnetic field generating element includes a magnetic bar attached ...

Inspection Equipment

Inspection equipment frequency transforms a mirror electron image with respect to position coordinates, calculates a value of a frequency plane origin or a value at a vicinity of the frequency plane origin as a first measurement value, and calculates a second measurement value by totalizing values of image intensities in a certain area, the image intensities having been obtained through normalization by the origin value or origin-vicinity value and the frequency transform. The inspection equipment automatically controls the voltage of a wafer holder based on the first and second measurement values. 1. Inspection equipment , comprising:an irradiation optical system to irradiate an area including a field of view on a wafer with an electron beam emitted from an electron source;a voltage application unit to apply a controlled negative voltage to the wafer or a wafer holder holding the wafer;a mirror-electron imaging optical system to capture a mirror electron image by, with the voltage applied to the wafer or the wafer holder, having an image formed by electrons reflected from the wafer;a calculation unit that frequency-transforms the mirror electron image with respect to position coordinates and calculates a value of a frequency plane origin or a value at a vicinity of the frequency plane origin as a first measurement value and that also calculates a second measurement value by totalizing values of image intensities in a certain area the image intensities having been obtained through normalization by the origin value or origin-vicinity value and the frequency transform;a control unit that, based on the first measurement value and the second measurement value, outputs to the voltage application unit a signal to control the voltage applied by the voltage application unit; anda defect detection unit that detects a defect of the wafer using the mirror electron image obtained at the voltage controlled by the control unit.2. The inspection equipment according to claim 1 , ...

COMPENSATED LOCATION SPECIFIC PROCESSING APPARATUS AND METHOD

An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing. 1. An apparatus for processing a workpiece with a beam , comprising:a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam;a scanner for translating the workpiece through the particle beam;a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner; anda beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.2. The apparatus of claim 1 , wherein the particle beam includes a charged particle beam or an un-charged particle beam.3. The apparatus of claim 2 , where the particle beam includes a neutral beam claim 2 , a gas cluster beam claim 2 , a gas cluster ion beam claim 2 , an ion beam claim 2 , an electron beam claim 2 , or combinations thereof.4. The apparatus of claim 1 , wherein the vacuum chamber includes plural beam-lines for forming multiple particle beams.5. The apparatus of claim 1 , wherein the scan property includes a scan velocity claim 1 , a scan path claim 1 , a scan acceleration claim 1 , a scan location claim 1 , or any combination of two or more thereof.6. The apparatus of claim 1 , further comprising:a controller programmably configured to ...

ACCELERATOR SYSTEM FOR MINERAL COMPONENT ANALYSIS, SYSTEM AND METHOD FOR MINERAL COMPONENT ANALYSIS

The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray. 1. An accelerator system for mineral component analysis , comprising:an electron gun for generating an electron beam;an accelerating tube for accelerating the electron beam emitted by the electron gun to a predetermined energy;a composite target for receiving the electron beam to generate a radioactive ray on the composite target; anda shielding mechanism for shielding the radioactive ray.2. The accelerator system for mineral component analysis of further comprising:a microwave system for providing a microwave electromagnetic field to the accelerating tube to accelerate the electron beam to the predetermined energy.3. The accelerator system for mineral component analysis of claim 1 , wherein the predetermined energy of the electron beam after acceleration of the accelerating tube is 8.5 MeV-14 MeV claim 1 , and wherein an energy of the electron beam after acceleration of the accelerating tube is continuously adjustable.4. The accelerator system for mineral component analysis of claim 1 , wherein the radioactive ray produced by the composite target comprises X-ray.5. The accelerator system for mineral component analysis of claim 1 , whereinthe shielding mechanism comprises a first shielding layer and a second shielding layer;material of the first shielding layer is a lead material and a tungsten material, and material of the second shielding layer is a boron-containing polyethylene material.6. A system for mineral component analysis claim 1 , comprising: an ...

Electron Beam 3D Printing Machine

An electron beam 3D printing machine ( 1 ), comprising a chamber ( 2 ) for generating and accelerating an electron beam and an operating chamber ( 3 ) in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber ( 2 ) for generating and accelerating an electron beam houses means ( 4 ) for generating an electron beam and means ( 6 ) for accelerating the generated electron beam, while the operating chamber ( 3 ) houses at least one platform ( 16 ) for depositing the metal powder, metal powder handling means ( 18 ) and electron beam deflection means ( 15 ). The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

Charged Particle Beam Device

Signal electrons with high energy that pass near an optical axis, for example, backscattered electrons or secondary electrons in a booster optical system, can be detected. Therefore, there is provided a charged particle beam device including: a charged particle beam source configured to generate a charged particle beam; an objective lens configured to focus the charged particle beam to a sample; and a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, in which a detection surface of the first charged particle detecting element is disposed on a center axis of the objective lens. 1. A charged particle beam device comprising:a charged particle beam source configured to generate a charged particle beam;an objective lens configured to focus the charged particle beam to a sample; anda first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, whereina detection surface of the first charged particle detecting element is disposed on an center axis of the objective lens.2. The charged particle beam device according to claim 1 , further comprising:a first charged particle beam aperture disposed on an optical axis of the charged particle beam and having an opening portion, whereinthe first charged particle detecting element is disposed on a center position of the opening portion of the first charged particle beam aperture.3. The charged particle beam device according to claim 2 , whereinthe first charged particle beam aperture is an annular aperture having a shielding portion that shields the charged particle beam on the center position of the opening portion, andthe first charged particle detecting element is disposed in ...

ELECTRON BEAM IRRADIATION DEVICE

An electron beam irradiation device that can irradiate an object in water with an electron beam is provided. An acceleration tube includes an acceleration space in which an electron beam generated by an electron gun is accelerated and an irradiation port through which the electron beam accelerated in the acceleration space can be irradiated to the outside. Hydrogen gas supply means can supply the acceleration space with hydrogen gas at a predetermined pressure. The hydrogen gas supplied to the acceleration space by the hydrogen gas supply means is emitted from the irradiation port and the electron beam irradiated from the irradiation port passes through the hydrogen gas emitted from the irradiation port 1. An electron beam irradiation device comprising:an electron gun that generates an electron beam;an acceleration tube including an acceleration space provided for accelerating the electron beam generated by the electron gun, and an irradiation port that can irradiate the electron beam accelerated in the acceleration space to the outside; andhydrogen gas supply means configured to supply the acceleration space with hydrogen gas at a predetermined pressure,wherein the hydrogen gas supplied to the acceleration space by the hydrogen gas supply means is emitted from the irradiation port, and the electron beam irradiated from the irradiation port passes through the hydrogen gas emitted from the irradiation port.2. The electron beam irradiation device according to claim 1 , wherein claim 1 , when the irradiation port is placed in water claim 1 , the hydrogen gas can be emitted toward an object placed at a predetermined position in the water and the object can be irradiated with the electron beam.3. The electron beam irradiation device according to claim 2 , further comprising:current generation means configured to generate a current,wherein the object is a liquid, a gas or plasma; andwherein a current generated by the current generation means traps the object at the ...

APPARATUS AND METHOD TO CONTROL ION BEAM CURRENT

An apparatus to control an ion beam for treating a substrate. The apparatus may include a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam, a ground electrode assembly disposed downstream of the fixed electrode. The ground electrode assembly may include a base and a ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position. 1. An apparatus to control an ion beam for treating a substrate , comprising:a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam;a ground electrode assembly disposed downstream of the fixed electrode, the ground electrode assembly comprising:a base; anda ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position.2. The apparatus of claim 1 , further comprising a drive component configured to move the ground electrode between the first position and second position responsive to user input.3. The apparatus of claim 1 , further comprising a plurality of support members affixed to the base claim 1 , wherein the ground electrode further comprises a plurality of sleeves circumferentially disposed around the plurality of support members claim 1 , ...

CHARGED PARTICLE BEAM DEVICE

The present invention prevents breakage of a chip by using a simple configuration even when an extraction-electrode power source cannot apply voltage to an extraction electrode due to a malfunction, etc. This charged particle beam device is provided with: a charged particle source; an extraction electrode that extracts charged particles from the charged particle source; an extraction-electrode power source that applies voltage to the extraction electrode; an accelerating electrode for accelerating the charged particles; an accelerating power source that applies voltage to the accelerating electrode; and a diode and a resistor which are connected in series between a middle stage of the accelerating power source and the output side of the extraction-electrode power source. 1. A charged particle beam device comprising:a charged particle source;an extraction electrode configured to extract a charged particle from the charged particle source;an extraction-electrode power source configured to apply a voltage to the extraction electrode;an acceleration electrode configured to accelerate the charged particle;an acceleration power source configured to apply a voltage to the acceleration electrode; anda diode and a resistor connected in series between a middle stage of the acceleration power source and an output side of the extraction-electrode power source.2. The charged particle beam device according to claim 1 , further comprising:a power source control unit configured to control the acceleration power source and the extraction-electrode power source; andan extraction-electrode power source node switch configured to disconnect the extraction-electrode power source from a circuit, whereinthe power source control unit turns off the extraction-electrode power source node switch when a generation of an abnormality in the extraction-electrode power source is detected.3. The charged particle beam device according to claim 2 , whereinthe power source control unit turns off the ...

Charged Particle Beam Device

A purpose of the present invention is to provide a charged particle beam device that suppresses an off-axis amount when a field of view moves, said move causing an aberration, and allows large field of view moves to be carried out. In order to achieve the above-mentioned purpose, this charged particle beam device is provided with an objective lens and deflectors for field of view moves, said deflectors deflecting a charged particle beam, and is further provided with an accelerating tube positioned between the objective lens and the deflectors for field of view moves, a power source that applies a voltage to the accelerating tube, and a control device that controls the voltage to be applied to the power source in response to the deflection conditions of the deflectors for field of view moves. 1] A charged particle beam device including an objective lens that focuses a charged particle beam emitted from a charged particle source and irradiates a sample with the charged particle beam , and a deflector for moving a field of view , which deflects the charged particle beam , the device comprising:an accelerating tube that is disposed between the deflector for moving the field of view and the objective lens;a power source that applies a voltage to the accelerating tube; anda control device that controls a voltage applied to the power source according to a deflection condition of the deflector for moving the field of view.2] The charged particle beam device according to claim 1 ,wherein the accelerating tube is disposed at the same height as a front focal position of the objective lens in an ideal optical axis direction of the charged particle beam.3] The charged particle beam device according to claim 1 ,wherein the control device has a first optical mode in which the field of view is not moved by the deflector for moving the field of view or image shift of a predetermined value or less is performed, and a second optical mode in which the field of view is moved by the ...

Aberration Correcting Device for an Electron Microscope and an Electron Microscope Comprising Such a Device

The invention relates to an aberration correcting device for correcting aberrations of focusing lenses in an electron microscope. The device comprises a first and a second electron mirror, each comprising an electron beam reflecting face. Between said mirrors an intermediate space is arranged. The intermediate space comprises an input side and an exit side. The first and second electron mirrors are arranged at opposite sides of the intermediate space, wherein the reflective face of the first and second mirror are arranged facing said intermediate space. The first mirror is arranged at the exit side and the second mirror is arranged at the input side of the intermediate space. In use, the first mirror receives the electron beam coming from the input side and reflects said beam via the intermediate space towards the second mirror. The second mirror receives the electron beam coming from the first mirror, and reflects the electron beam via the intermediate space towards the exit side. The incoming electron beam passes said second mirror at a position spaced apart from the reflection position on the second mirror. At least one of the electron mirrors is arranged to provide a correcting aberration to a reflected electron beam. 128.-. (canceled)29. An aberration correcting device for correcting aberrations of an electron beam in an electron microscope , wherein the aberration correcting device comprises:a first and a second electron mirror, each comprising an electron beam reflecting face,an intermediate space, wherein the intermediate space comprises a input side for inputting the electron beam into the intermediate space, and an exit side for exiting the electron beam out of the intermediate space,wherein the first and second electron mirror are arranged at opposite sides of the intermediate space, and wherein the reflective face of the first electron mirror and the reflective face of the second mirror are arranged to face said intermediate space,wherein the first ...

BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION

A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials. 1. A dopant gas composition comprising:{'sub': 2', '3, 'a boron-containing dopant gas composition comprising diborane (B2H6) at a level ranging from about 0.1%-10%, Hranging from about 5%-15% and the balance is BF, wherein said B2H6 is selected to have a ionization cross-section higher than that of said BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active boron ions;'}wherein said boron-containing dopant gas composition increases boron ion beam current and extends ion source life in comparison to a beam current generated from boron trifluoride (BF3).2. The dopant gas composition of claim 1 , wherein said B2H6 is at about 2-5% claim 1 , said H2 is at a level ranging from about 5-10% and the balance is BF3.3. The dopant composition of claim 1 , wherein said B2H6 claim 1 , said H2 and balance BF3 is supplied from a single storage and delivery source.4. The dopant composition of claim 1 , wherein said B2H6 and BF3 are supplied in separate storage and delivery sources so as to create the boron-containing dopant composition within a chamber of said ion source.5. The dopant composition of claim 1 , wherein said boron-containing gas composition ...

Low emission cladding and ion implanter

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12 C layer, the 12 C layer having an outer surface, facing the cavity.

LOW VOLTAGE SCANNING ELECTRON MICROSCOPE AND METHOD FOR SPECIMEN OBSERVATION

A low voltage scanning electron microscope is disclosed, which includes: an electron source configured to generate an electron beam; an electron beam accelerator configured to accelerate the electron beam; a compound objective lens configured to converge the electron beams accelerated by the electron beam accelerator; a deflection device arranged between the inner wall of the magnetic lens and the optical axis of the electron beam and configured to deflect the electron beam; a detection device comprising a first sub-detection device for receiving secondary and backscattered electrons from the specimen, a second sub-detection device for receiving backscattered electrons, and a control device for changing the trajectories of the secondary electrons and the backscattered electrons; an electrostatic lens comprising the second sub-detection device, a specimen stage, and a control electrode for reducing the moving speed of the electron beam and changing the moving directions of the secondary and the backscattered electrons. 1. A low voltage scanning electron microscope system , comprising: an electron source , an electron beam accelerator , a deflection device , a detection device , a compound objective lens comprising a magnetic lens and an electrostatic lens , wherein ,the electron source is configured to generate an electron beam;the electron beam accelerator is configured to accelerate the electron beam;the compound objective lens is configured to converge the electron beam accelerated by the electron beam accelerator;the deflection device is arranged between an inner wall of the magnetic lens and an optical axis of the electron beam and is configured to deflect the electron beam accelerated by the electron beam accelerator;the detection device comprises a first sub-detection device for receiving secondary electrons and backscattered electrons generated by applying the electron beam to impinge on a specimen, a second sub-detection device for receiving the ...

DETECTION SYSTEMS IN SEMICONDUCTOR METROLOGY TOOLS

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time. 1. A charged particle detection system , comprising:a local electrode configured to produce an attractive electric field and to direct a charged particle from a sample towards an aperture of the local electrode; wherein the first type accelerator is configured to accelerate a first velocity of the charged particle exiting the local electrode to a second velocity higher than the first velocity, and', 'wherein the second type accelerator is configured to accelerate the second velocity of the charged particle exiting the first type accelerator to a third velocity higher than the second velocity;, 'an acceleration system comprising first and second type accelerators different from each other,'}a guide system configured to create a guide field and to alter a flight path direction of the charged particle; anda position detector configured to detect two-dimensional position coordinates of the removed particle and a flight time of the charged particle.2. The charged particle detection system of claim 1 , wherein the first type accelerator includes a linear accelerator configured to supply a DC ...

Composite charged particle beam apparatus and control method thereof

Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

PARTICLE-OPTICAL SYSTEMS AND ARRANGEMENTS AND PARTICLE-OPTICAL COMPONENTS FOR SUCH SYSTEMS AND ARRANGEMENTS

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity. 1. A particle-optical component comprising:at least one multi-aperture plate having a plurality of apertures formed therein, each for manipulating particles of a charged particle beamlet passing therethrough;wherein the multi-aperture plate comprises plural conductive layer portions arranged substantially in a single plane, wherein plural apertures are formed in each of the plural conductive layer portions, and wherein a resistant gap is formed between adjacent conductive layer portions.2. The particle-optical component according to claim 1 , wherein the component is configured such that adjacent conductive layer portions are at different electric potentials.3. The particle-optical component according to claim 1 , further comprising at least one voltage source for supplying predetermined voltages to the plural conductive layer portions.4. The particle-optical component according to claim 1 , further comprising at least one resistor electrically ...

ION MILLING SYSTEM

To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun that includes a permanent magnet and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield for reducing a leakage magnetic field from the permanent magnet to the electron microscope column is provided. 1. An ion milling system comprising:an ion gun that includes a permanent magnet and that generates ions for processing a sample; anda scanning electron microscope that observes the sample, whereinthe ion milling system includes a magnetic shield that reduces a leakage magnetic field from the permanent magnet.2. The ion milling system according to claim 1 , whereinthe ion gun includes an accelerating electrode that accelerates the ions, andthe magnetic shield is the accelerating electrode configured with a ferromagnetic material.3. The ion milling system according to claim 2 , whereinthe ion gun includes an ion gun base that holds the permanent magnet and the accelerating electrode, anda ferromagnetic material is disposed on a surface, on a side of which the accelerating electrode is disposed, of the ion gun base.4. The ion milling system according to claim 1 , whereinthe ion gun includes an accelerating electrode that accelerates the ions; and an ion gun base that holds the permanent magnet and the accelerating electrode, andthe magnetic shield is configured with a ferromagnetic material with which an outer peripheral surface of the accelerating electrode and a surface, on a side of which the accelerating electrode is disposed, of the ion gun base are covered.5. The ion milling system according to claim 1 , whereinthe ion gun includes an accelerating electrode that accelerates the ions; and an ion gun base that holds the permanent magnet and the accelerating electrode, andthe magnetic ...

ION IMPLANTER AND ION IMPLANTATION METHOD

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments. 1. An ion implanter comprising:a plurality of devices which are disposed along a beamline along which an ion beam is transported;a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; anda control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.2. The ion implanter according to claim 1 , wherein the control device estimates a position of at least one of neutron ray sources in the beamline claim 1 , based on measurement values of the plurality of neutron ray measuring instruments.3. The ion implanter according to claim 1 , wherein the control device estimates intensity of a neutron ray which is emitted from at least one of neutron ray sources in the beamline claim 1 , based on measurement values of the plurality of neutron ray measuring instruments.4. The ion implanter according to claim 1 , wherein at least one of the plurality of neutron ray measuring instruments is disposed in the vicinity of at least one of a slit claim 1 , a beam monitor claim 1 , and a beam dump which are provided in the beamline.5. The ion implanter according to claim 1 , wherein the control device detects abnormality of at ...

Ion implanter

An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.

PARTICLE BEAM IRRADIATION SYSTEM

An irradiation apparatus attached to a rotary gantry includes a middle housing unit and a lower housing unit. Touch sensor apparatuses are attached to a middle housing unit, and touch sensor apparatuses are attached to a lower housing unit. The touch sensor apparatus includes a cover, a pair of cover support apparatuses for attaching the cover to a support member of the middle housing unit, and a sensor unit attached to each cover support apparatus. When the cover comes into contact with a bed and moves toward the support member during rotation of the irradiation apparatus, a link such as a cover support apparatus activates the sensor unit, and a contact signal is output. The touch sensor apparatuses also function in the same manner. 1. A particle beam irradiation system comprising:an accelerator accelerating an ion beam; andan irradiation apparatus guiding the ion beam emitted from the accelerator, whereinthe irradiation apparatus includes a touch sensor apparatus detecting a force applied from a direction crossing a center axis of the irradiation apparatus.2. The particle beam irradiation system according to claim 1 , wherein the irradiation apparatus is attached to a rotary gantry.3. The particle beam irradiation system according to claim 1 , wherein the touch sensor apparatus is disposed at a tip of the irradiation apparatus.4. The particle beam irradiation system according to claim 3 , wherein the touch sensor apparatus includes a round bar-shaped contact detection unit includes a round bar-shaped contact detection unit provided on an external periphery of the tip of the irradiation apparatus.5. The particle beam irradiation system according to claim 1 , comprising:a rotary gantry attached with the irradiation apparatus; anda first touch sensor apparatus of which side surface the irradiation apparatus is located at and which is the touch sensor apparatus.6. The particle beam irradiation system according to claim 5 , wherein the first touch sensor apparatus ...

Electron Microscope and Method of Controlling Same

There is provided an electron microscope in which a crossover position can be kept constant. The electron microscope () includes: an electron source () for emitting an electron beam; an acceleration tube () having acceleration electrodes (-) and operative to accelerate the electron beam; a first electrode () operative such that a lens action is produced between this first electrode () and the initial stage of acceleration electrode (); an accelerating voltage supply () for supplying an accelerating voltage to the acceleration tube (); a first electrode voltage supply () for supplying a voltage to the first electrode (); and a controller () for controlling the first electrode voltage supply (). The lens action produced between the first electrode () and the initial stage of acceleration electrode () forms a crossover (CO) of the electron beam. The controller () controls the first electrode voltage supply () such that, if the accelerating voltage is modified, the ratio between the voltage applied to the first electrode () and the voltage applied to the initial stage of acceleration electrode () is kept constant. 1. An electron microscope comprising:an electron source for emitting an electron beam;an acceleration tube which has plural stages of acceleration electrodes stacked one above the other and which is operative to accelerate the electron beam;a first electrode placed in a stage preceding the acceleration tube and operative such that a lens action is produced between this first electrode and the initial stage of acceleration electrode of the plural stages of acceleration electrodes;an accelerating voltage supply for supplying an accelerating voltage to the acceleration tube;a first electrode voltage supply for supplying a voltage to the first electrode; anda controller for controlling the first electrode voltage supply,wherein the lens action produced between the first electrode and the initial stage of acceleration electrode forms a crossover of the electron ...

Ion implantation apparatus

An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.

SCANNING TRANSMISSION ELECTRON MICROSCOPE WITH VARIABLE AXIS OBJECTIVE LENS AND DETECTIVE SYSTEM

The present invention provides a scanning transmission electron microscope (STEM). In the STEM, a specimen is sandwiched between a variable axis objective lens and a variable axis collection lens. The axis of the collection lens varies along with the variation of the objective lens axis in a coordinated manner. The STEM of the invention exhibits technical merits such as large scanning field, high image resolution across the entire scanning field, and high throughput, among others. 1. A scanning transmission electron microscope (STEM) comprising:an electron source for emitting a primary electron beam;a detector for receiving the electron beam, wherein a reference axis is defined by the straight line connecting the electron source and the detector;a specimen plane located between the electron source and the detector, wherein the reference axis is perpendicular to the specimen plane;a first redirector that redirects the electron beam to a path not in alignment with the reference axis;a lens module comprising a variable axis objective lens and a variable axis collection lens, between which is the specimen plane, wherein the variable axis objective lens is located between the electron source and the specimen plane for focusing the electron beam redirected by said first redirector to a focusing spot on the specimen plane, and wherein the variable axis collection lens is located between the specimen plane and the detector for collecting the electron beam that has passed through the specimen plane; anda second redirector that redirects the electron beam that has been collected by the variable axis collection lens back to a path in alignment with the reference axis, before the beam reaches the detector.2. The STEM according to claim 1 , wherein the focused beam passes through the focusing spot in a direction substantially parallel to the reference axis claim 1 , or substantially perpendicular to the specimen plane.3. The STEM according to claim 1 , wherein the variable axis ...

ION IMPLANTER, ION BEAM IRRADIATED TARGET, AND ION IMPLANTATION METHOD

An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously. 1. An ion implanter , comprising:an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide;a beamline configured to support an ion beam irradiated target; anda controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.2. The ion implanter according to claim 1 ,{'sup': 11', '10, 'wherein the nonradioactive nuclide is B or B and the generated radioactive ray is a neutron ray.'}3. The ion implanter according to claim 1 , further comprising:an accelerator which can accelerate the ion beam generated by the ion source to an ultrahigh energy higher than or equal to at least 4 MeV.4. The ion implanter according to claim 1 ,wherein the controller includesa depth profile calculator which calculates an estimated depth profile of the nonradioactive nuclides accumulated in the ion beam irradiated target,a nuclear reaction rate calculator which calculates an estimated nuclear reaction rate based on an ion beam irradiation condition including an energy of the ion beam and an irradiation amount of the ion beam per unit time and based on the estimated depth profile of the nonradioactive nuclide, anda radiation dosage calculator which ...

INDIVIDUALLY SWITCHED FIELD EMISSION ARRAYS

An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements. 1. An electron beam apparatus comprising:a substrate; a current channel region disposed at a first end of the field emitter element proximate to the substrate;', 'a donor-doped region or an acceptor-doped region disposed at a second end of the field emitter element that is different from the first end; and', 'a field emitter tip disposed proximate to the second end of the field emitter element; and, 'a plurality of field emitter elements disposed over the substrate in at least one array, each field emitter element of the plurality of field emitter elements comprisingat least one extraction gate electrode disposed proximate to the plurality of field emitter elements, to apply a potential difference proximate to at least one field emitter tip of the plurality of field emitter elements, thereby accelerating the electrons emitted from the at least one field emitter tip in a direction away from the at least one field emitter tip.2. The apparatus of claim 1 , wherein each field emitter element of the plurality of field emitter elements has an aspect ratio of height to lateral dimension of about 5:1 claim 1 , about 10:1 claim 1 , about 50:1 claim 1 , about 100:1 claim 1 , about 200:1 claim 1 , about 500:1 claim 1 , about 800:1 claim 1 , about 1000:1 claim 1 , or about 5 claim 1 ,000:1.3. The apparatus of claim 1 , ...

HIGH VOLTAGE POWER SUPPLY DEVICE AND CHARGED PARTICLE BEAM DEVICE

Even in a case where a disturbance is applied from an adjacently disposed power supply circuit or the like, in order to realize a reduction in ripple, a high-voltage power supply device is configured to include a drive circuit, a transformer that boosts an output voltage of the drive circuit, a boost circuit that further boosts a voltage boosted by the transformer, a shield that covers the transformer and the boost circuit, a filter circuit that filters, smoothes, and outputs a high voltage output from the boost circuit, and an impedance loop circuit configured by connection of a plurality of impedance elements into a loop shape. A grounding point of the boost circuit, a grounding point of the shield, and a grounding point of the filter circuit are configured to be grounded via the impedance loop circuit, and this is applied to a high-voltage power supply unit that applies a high voltage to an electron gun of a charged particle beam apparatus. 1. A charged particle beam apparatus comprising:a charged-particle optical system having a detector that detects secondary charged particles generated from a sample when the sample is irradiated and scanned with a charged particle beam emitted from an electron gun;a signal processing unit that receives and processes an output signal from the charged-particle optical system, which is obtained from detection of the secondary charged particles by the detector;a high-voltage power supply unit that applies a high voltage to the electron gun;a charged-particle optical system control unit that controls the charged-particle optical system; anda control unit that controls the signal processing unit, the high-voltage source unit, and the charged-particle optical system control unit,wherein the electron gun includes an emitter that releases charged particles, a suppressor electrode that shields thermal electrons released from the emitter, and an extraction electrode and an anode electrode that extract and accelerate charged particles ...

Improved guidance of ions from a plasma to a substrate to be coated

The invention relates to a substrate holder ( 1 ) comprising a first contact ( 3 ) for the supply of a potential U s to the substrate ( 2 ), a charging region ( 12 ) on the surface ( 11 ) of the substrate holder ( 1 ) being designed such that it can be charged ( 13 ) with ions ( 101, 102 ) from the ion source ( 104 ) of a coating facility ( 100 ), and/or a second contact ( 4 ) is provided by means of which a freely selectable potential U H different from the potential U s can be applied to an electrode region ( 14 ) on the surface ( 11 ) of the substrate holder ( 1 ). The invention also relates to a coating facility ( 100 ) comprising at least one ion source ( 104 ) and a first voltage source ( 106 ) that can be connected to the substrate to be coated ( 2 ) such that gas ions ( 101 ) and/or ions ( 102 ) of a coating material ( 103 ) can be accelerated in the direction of the substrate ( 2 ) from the ion source ( 104 ) by means of an electric potential U s applied to the substrate ( 2 ) from the first voltage source ( 106 ), at least one secondary surface ( 11, 105 ), towards which ions ( 101, 102 ) missing the substrate ( 2 ) move, being designed ( 13, 113 ) such that it can be charged with arriving ions ( 101, 102 ), and/or at least one second voltage source ( 107 ) being provided, which can be connected to the secondary surface ( 11, 105 ) such that a freely selectable potential U s different from the potential U s can be applied to said secondary surface ( 11, 105 ). The invention further relates to an operating method and to a computer program product.

CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS

An ion implantation system has a source that generates ions from a beam species to form an ion beam, and a mass analyzer mass analyzes the ion beam. An accelerator receives the ion beam having ions at a first charge state and exits the ion beam having ions at a second positive charge state. The accelerator has a charge stripper, a gas source, and a plurality of accelerator stages. The charge stripper converts the ions from the first charge state to the second charge state. The gas source provides a high molecular weight gas, such as hexafluoride, to the charge stripper, and the plurality of accelerator stages respectively accelerate the ions. An end station supports a workpiece to be implanted with ions at the second charge state. 1. An ion implantation system , comprising:an ion source configured to generate an ion beam from a beam species, therein defining a generated ion beam;a mass analyzer configured to mass analyze the generated ion beam to define an analyzed ion beam, wherein the analyzed ion beam comprises ions at a first charge state; a charge stripper configured to receive the ions at the first charge state and to convert the ions at the first charge state to the ions at a second charge state, wherein the second charge state is a more positive charge state than the first charge state;', 'a gas source configured to provide a gas to the charge stripper, wherein the gas is configured to strip electrons from the ions at the first charge state; and', 'a plurality of accelerator stages respectively configured to accelerate the ions therein; and, 'an accelerator configured to receive the analyzed ion beam, wherein the accelerator is configured to define an exited ion beam, wherein the accelerator comprisesan end station positioned downstream of the accelerator and configured to support a workpiece for implantation thereto of the ions at the second charge state.2. The ion implantation system of claim 1 , wherein the gas comprises a high molecular weight gas.3. The ...

전자빔 발생장치 및 이를 제조하는 방법

본 발명에 따른 전자빔 발생장치는, 캐소드와, 캐소드가 일측 개구부에 결합되어 내측에 공진공동이 마련되는 하우징 및 캐소드와 하우징 사이에 마련되며 캐소드와 하우징 사이의 결합강도에 따라 압축되어 공진공동을 외부와 차단하는 개스킷을 포함한다.

Tandem accelerator and ion implantation system

개선된 성능을 갖는 탠덤 가속기 및 이온 주입기가 개시된다. 탠덤 가속기는 복수의 입력 전극들, 복수의 출력 전극들 및 그 사이에 배치되는 고 전압 단자를 포함한다. 고 전압 단자는 스트리퍼 튜브를 포함한다. 중성 분자들은, 인입 네거티브 이온 빔으로부터 전자들을 제거하는 스트리퍼 튜브 내로 주입된다. 결과적인 포지티브 이온들이 복수의 출력 전극들을 향해 가속된다. 스트리퍼 튜브를 빠져 나오는 희망되지 않는 포지티브 이온들의 양을 감소시키기 위하여 바이어스 전극이 스트리퍼 튜브의 입구 및 출구에 배치된다. 바이어스 전극들은, 단자에 인가되는 제 1 전압보다 더 큰 제 2 전압으로 바이어싱된다. 바이어스 전극들은 느리게 움직이는 포지티브 이온들을 반사하며, 이는 이들이 스트리퍼 튜브를 빠져 나가는 것 및 작업물을 오염시키는 것을 방지한다. A tandem accelerator and an ion implanter having improved performance are disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes, and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. The neutral molecules are injected into a stripper tube that removes electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. A bias electrode is disposed at the inlet and outlet of the stripper tube to reduce the amount of undesired positive ions exiting the stripper tube. The bias electrodes are biased to a second voltage that is greater than the first voltage applied to the terminal. The bias electrodes reflect slowly moving positive ions, which prevents them from escaping the stripper tube and contaminating the workpiece.

Apparatus for accelerating an ion beam

이온빔 가속 장치는, a) 기부측(proximal side) 및 원심측(distal side)을 갖고, 또한 관통되어 있는 하나 이상의 애퍼처를 가지며, 원심측의 애퍼처의 반경이 기부측의 애퍼처의 반경보다 크도록 애퍼처의 벽부가 성형되는 제1 전극, b) 제1 전극의 원심측에 인접하여 있지만 분리되어 있는 상태로 위치되며, 관통되어 있는 하나 이상의 애퍼처를 갖는 제2 전극, 및 c) 제2 전극에 인접하여 있지만 분리되어 있는 상태로 위치되고, 관통되어 있는 하나 이상의 애퍼처를 갖는 제3 전극을 포함하며, 각각의 제1 전극 내지 제3 전극 내의 하나 이상의 애퍼처는 다른 전극의 대응하는 애퍼처와 정렬되며, 제1 전극 내지 제3 전극은, 제1 전극과 제2 전극 간에 전위차가 존재하고, 또한 제2 전극과 제3 전극 간에 전위차가 존재하도록 배치된다. The ion beam accelerator has a) a proximal side and a distal side, and also has one or more apertures through which the radius of the aperture on the centrifugal side is greater than the radius of the aperture on the base side. A first electrode to be formed such that the wall portion of the aperture is formed to be large, b) a second electrode positioned adjacent to the centrifugal side of the first electrode but separated and having at least one aperture therethrough; A third electrode positioned adjacent to, but separated from, the second electrode, the third electrode having one or more apertures therethrough, wherein the one or more apertures in each of the first to third electrodes correspond to the corresponding of the other electrodes. Aligned with the aperture, the first to third electrodes are arranged such that a potential difference exists between the first electrode and the second electrode, and a potential difference exists between the second electrode and the third electrode. 이온빔, 플라즈마 발생기, 가속기, 빔 형성 전극, 추출 전극 Ion beam, plasma generator, accelerator, beam forming electrode, extraction electrode

Charged particle accelerator

High resolution gas field ion column with reduced sample load

A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method being adapted for high imaging resolutions below 1 nm includes emitting an ion beam from a gas field ion source, providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

Scanning ion microscope and secondary particle control method

The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image.

High resolution gas field ion column with reduced sample load

A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

High resolution gas field ion column with reduced sample load

A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

Focused ion beam low kv enhancement

The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

Scanning ion microscope and secondary particle control method

Apparatus and method for partial energy ion implantation

An apparatus and method for partial energy ion implantation is provided to perform uneven ion implantation within a wafer by making the ion implantation energy different according to the specific aspect section of the wafer. Ion implantation equipment comprises a first deceleration part including an ion beam generator and a decelerating electrode(141) and comprises a second deceleration part including a second decelerating electrode(151). The energy of the ion beam generated from the ion beam generator decelerates by the first deceleration part. The energy of the ion beam decelerated from the first deceleration part decelerates by the second deceleration part. The energy of the ion beam slows down to the different first energy and the second energy according to the domain of the wafer in which the energy of the ion beam the ion beam is injected by the second deceleration part.

Ion implantation system and method with variable energy control

Method and device for directing neutral particles beam

FIELD: physics. SUBSTANCE: invention relates to means for deflecting a beam of neutral particles. Invention provides for the use of an accelerating electrode located at a certain distance from the output aperture, herewith the said accelerating electrode has an aperture surrounding the initial path. Accelerating electrode and its aperture are inclined at a first angle of inclination along the first axis of inclination relative to the initial path of a gas cluster ions beam. Accelerating electrode is further electrically biased relative to the ion source to accelerate the gas cluster ions beam in the area between the ion source output aperture and the accelerating electrode aperture. First angle of inclination results in a deflection of the gas cluster ions beam from the initial path along the first deflected path. There are also drift space for the deflected gas cluster ions beam, in which the gas cluster ions are dissociated in the beam of accelerated gas cluster ions with the formation of accelerated neutral particles, and a means for separating the ions from the neutral particles to remove the ions from the path of the deflected beam, so that the accelerated neutral particles follow the path of the deflected beam in the form of a beam of neutral particles. EFFECT: technical result is the possibility of correcting the angular beam displacement of neutral particles obtained from a gas cluster ions beam, and also the possibility of scanning the beam of neutral particles obtained from the gas cluster ions beam. 20 cl, 8 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 653 581 C2 (51) МПК H05H 3/02 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК H05H 3/02 (2006.01) (21)(22) Заявка: 2015137676, 04.02.2014 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): ЭКСОДЖЕНЕЗИС КОРПОРЕЙШН (US) Дата регистрации: 15.05.2018 4775789 A, 04.10.1988. US 4935623 A, 28.09.1909. RU 2362277 C1, 20.07.2009. 04 ...

Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials

A system for forming one or more detachable semiconductor films capable of being free-standing. The apparatus includes an ion source to generate a plurality of collimated charged particles at a first energy level. The system includes a linear accelerator having a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N successively coupled to each other, where N is an integer greater than 1. The linear accelerator controls and accelerates the plurality of collimated charged particles at the first energy level into a beam of charge particles having a second energy level. RFQ element numbered 1 is operably coupled to the ion source. The system includes an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator. In a specific embodiment, the system includes a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles. The system includes a process chamber coupled to the beam expander and a workpiece provided within the process chamber to be implanted

Line Type Electron Beam Emission Device Using Plasma

본 발명은 라인 형태의 전자빔 방출 장치에 관한 것으로, 보다 상세하게는 일정 곡률반경을 가지는 캐소드와 애노드를 이용하여 플라즈마 상에서 라인 형태의 전자빔을 생성할 수 있고, 배기(Outgassing)되는 잔유 가스의 진입을 차단하여 기화물질의 오염을 방지할 수 있는 플라즈마를 이용한 라인 형태의 전자빔 방출 장치에 관한 것이다. 본 발명에 따른 플라즈마를 이용한 라인 형태의 전자빔 방출 장치는, 챔버의 상부측에 설치되면서, 하면이 상방으로 만곡진 곡면 형상으로 구성됨과 더불어, 챔버 상측으로부터 길이방향으로 관통되는 다수의 가스홀을 형성하도록 구성되며, 이 가스홀들을 통해 챔버 내부로 유입되는 공정 가스를 전리시켜 하측에 플라즈마를 형성하는 캐소드와, 상기 캐소드의 하측에 배치되고, 양전압이 인가됨에 따라 상측에 형성된 플라즈마내의 전자를 하방으로 방출하되, 상기 캐소드에 대응되는 형상의 곡면 형상이면서 다수의 홀이 형성되어 구성됨으로써, 홀을 통해 방출되는 전자들이 일정 위치에서 라인 형태의 전자빔을 형성하도록 하는 애노드, 상기 애노드의 하측에 설치되어 라인 형태의 전자빔을 상기 기판으로 집중시키는 마그네틱 렌즈, 상기 마그네틱 렌즈와 기판 홀더 사이에 설치되면서, 고전압에 의해 2차 전자를 가속시키는 그리드 전극 및, 상기 챔버 내에 위치하면서, 내부 공간에 캐소드와 애노드를 수납하고, 하측으로 갈수록 반경이 좁아지는 원뿔대 형상으로 하방에 개구가 형성되는 공간분할관체를 포함하여 구성되고, 상기 캐소드와 애노드는 50% 이내 범위에서 서로 다른 곡률 반경을 갖도록 구성되는 것을 특징으로 한다.

Particle beam device and composite beam device

本发明提供粒子射束装置和复合射束装置，该粒子射束装置能够选择性地且适当地切换带电粒子射束和中性粒子射束。粒子射束镜筒(19)具备离子源(41)、聚光镜(52)、电荷交换栅极(55)和物镜(56)。离子源(41)产生离子。聚光镜(52)通过切换离子射束的聚焦而切换离子射束和中性的射束作为照射至试样(S)的粒子射束。电荷交换栅极(55)通过将离子射束的至少一部分中性化而转换成中性粒子射束。物镜(56)配置于电荷交换栅极(55)的下游侧。在对试样(S)照射中性粒子射束作为粒子射束的情况下，物镜(56)减少朝向试样(S)的离子射束。

Particle beam apparatus and method for examining and / or processing an object

Die Erfindung betrifft ein Teilchenstrahlgerät und ein Verfahren zur Untersuchung und/oder Bearbeitung eines Objekts. Der Erfindung liegt die Aufgabe zugrunde, ein Teilchenstrahlgerät und ein Verfahren anzugeben, bei dem die Position eines Crossovers auf einer optischen Achse eines Teilchenstrahlgeräts auch bei einem festgelegten Extraktorpotential und bei einer festgelegten Hochspannung beliebig einstellbar ist. Diese Aufgabe wird erfindungsgemäß durch ein Teilchenstrahlgerät gelöst, das eine erste Elektrodeneinheit mit drei Elektrodeneinrichtungen, eine zweite Elektrodeneinheit mit drei Elektrodeneinrichtungen und eine Beschleunigungseinheit aufweist. Das erfindungsgemäße Verfahren verwendet das Teilchenstrahlgerät. The invention relates to a particle beam device and a method for examining and / or processing an object. The invention is based on the object of specifying a particle beam device and a method in which the position of a crossover on an optical axis of a particle beam device can be set as desired even with a fixed extractor potential and with a fixed high voltage. This object is achieved according to the invention by a particle beam device which has a first electrode unit with three electrode devices, a second electrode unit with three electrode devices and an acceleration unit. The method according to the invention uses the particle beam device.

Particle beam device and method for analyzing and/or treating an object

A particle beam device and a method for analyzing and/or treating an object is disclosed. According to the described system, the position of a crossover on an optical axis of a particle beam device can be freely adjusted, even in the case of a fixed extractor potential and a fixed high voltage. The particle beam device has a first electrode unit with three electrode apparatuses, a second electrode unit with three electrode apparatuses, and an acceleration unit. The method according to the system described herein uses the particle beam device.

Charged particle beam device

Eine Ladungsträgerstrahlvorrichtung umfasst: eine Ladungsträgerquelle, die einen Ladungsträgerstrahl aussendet; eine Verstärkungselektrode, die zwischen der Ladungsträgerquelle und einer Probe angeordnet ist, um einen Weg des Ladungsträgerstrahls zu bilden und den Ladungsträgerstrahl zu beschleunigen und zu verzögern; ein erstes Polstück, das die Verstärkungselektrode abdeckt; ein zweites Polstück, das das erste Polstück abdeckt; eine erste Linsenspule, die außerhalb des ersten Polstücks und innerhalb des zweiten Polstücks angeordnet ist, um eine erste Linse zu bilden; eine zweite Linsenspule, die außerhalb des zweiten Polstücks angeordnet ist, um eine zweite Linse zu bilden; und eine Steuerelektrode, die zwischen einem distalen Endabschnitt des ersten Polstücks und einem distalen Endabschnitt des zweiten Polstücks ausgebildet ist, um ein zwischen der Probe und dem distalen Endabschnitt des zweiten Polstücks ausgebildetes elektrisches Feld zu steuern. A charged particle beam device comprises: a carrier source that emits a charged particle beam; a gain electrode disposed between the carrier source and a sample to form a path of the carrier beam and to accelerate and decelerate the carrier beam; a first pole piece covering the reinforcing electrode; a second pole piece covering the first pole piece; a first lens coil disposed outside the first pole piece and within the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.

Scanning electron microscope

Ion implantation system and method with variable energy control

워크피스를 가로질러 이온들을 변하는 에너지들로 주입하기 위한 이온 주입 시스템 및 방법이 제공된다. 상기 시스템은 도펀트 가스를 복수의 이온들로 이온화시켜 이온 빔을 형성하도록 구성된 이온 소스를 포함한다. 질량 분석기는 이온 소스의 하류측에 배치되고, 이온 빔을 질량 분석하도록 구성된다. 감속/가속 스테이지는 질량 분석기의 하류측에 배치된다. 에너지 필터는 감속/가속 스테이지의 일부를 형성할 수 있거나, 감속/가속 스테이지의 하류측에 배치될 수 있다. 이온 빔이 또한 제공되기 전에 워크피스를 배치하기 위해 그와 연관된 워크피스 지지체를 구비하는 종료 스테이션이 제공된다. 스캐닝 장치는 이온 빔 및 워크피스 지지체 중 하나 이상을 서로에 대해 스캐닝하도록 구성된다. 하나 이상의 전원들은 이온 소스, 질량 분석기, 감속/가속 스테이지 및 에너지 필터 중 하나 이상에 작동가능하게 결합된다. 제어기는 이온 빔 및/또는 워크피스 지지체의 스캐닝과 동시에 감속/가속 스테이지 및 에너지 필터 중 하나 이상에 각각 공급되는 하나 이상의 전압들을 선택적으로 변화시키도록 구성되며, 하나 이상의 전압들의 선택적인 변화는 상기 워크피스 지지체에 대한 이온 빔의 위치에 적어도 부분적으로 기초한다.

A method for correcting the inclination of a charged particle beam and a charged particle beam device

Bei einer herkömmlichen Einstellung der optischen Achse fällt ein Strahl geladener Teilchen nicht senkrecht auf eine Probe ein, wodurch die Messungen eines beobachteten Musters beeinflusst werden. Eine sehr genaue Messung und eine sehr genaue Korrektur des Neigungswinkels eines Mikroskops sind schwierig. Daher wird gemäß der vorliegenden Erfindung, während ein Strahl geladener Teilchen auf eine Probe eingestrahlt wird, eine Korrektur der Neigung des auf die Probe gerichteten Strahls geladener Teilchen auf der Grundlage von Informationen zum Sekundärelektronen-Abtastbild von einer Reflektorplatte (5) ausgeführt. Anhand der Informationen des Sekundärelektronen-Abtastbilds wird der Abweichungsvektor für Ablenker (6, 7) für den Strahl geladener Teilchen eingestellt, so dass der Strahl geladener Teilchen senkrecht auf die Probe einfällt. Es sind wenigstens zwei Stufen von Ablenkern (6, 7) für den Strahl geladener Teilchen vorgesehen. In a conventional optical axis adjustment, a charged particle beam does not fall perpendicular to a sample, thereby affecting the measurements of an observed pattern. A very accurate measurement and a very accurate correction of the tilt angle of a microscope are difficult. Therefore, according to the present invention, while a charged particle beam is irradiated to a sample, correction of the tilt of the charged particle beam directed to the sample is performed on the basis of secondary electron scanning image information from a reflector plate (5). Based on the information of the secondary electron scanning image, the deviation vector for deflectors (6, 7) for the charged particle beam is adjusted so that the charged particle beam is perpendicular to the sample. At least two stages of charged particle beam deflectors (6, 7) are provided.

Method and apparatus for operating a high energy accelerator in a low energy mode

(57)【要約】 【解決手段】荷電粒子加速器を含むイオン注入を高エネルギーモードおよび低エネルギーモードで有効に動作させる方法および装置が提供される。荷電粒子加速器は高圧電源，高圧電源に連結される加速器カラムおよび切り替え組立体を含む。加速器カラムは複数の加速器電極を含む。高圧電源は，低エネルギーモードでは加速器カラムの付勢ができない。切り替え組立体は，低エネルギーモードで，加速器電極を基準電位に電気的に接続し，高エネルギーモードで，加速器電極を基準電気から電気的に分離するための切り替え要素を含む。切り替え組立体は，加速器電極が正の電位をもつことを妨げ，したがって，低エネルギーモードで正のイオンビームを移動するときに，ビームの空間電荷膨張を最小にする。

Photoelectric mask image projector for semiconductor prodn. - uses magnetic and electric fields and auxiliary grid electrode as electric field positive electrode (NL 6.7.78)

The mask image is projected onto a semiconductor wafer surface mounted at a distance from the mask coated photocathode. The projector uses a magnetic field at right angles to the photocathode and a semiconductor wafer, and a parallel electric acceleration field. An auxiliary grid electrode (6) between the mask (4) and the semiconductor wafer (5) forms the positive electrode of the electric field. Pref. the auxiliary electrode has a positive potential of the order of 10V against the semiconductor wafer. At the edge of the space, through which electrons propagate between the mask and the auxiliary electrode are mounted several conductive plates (13), parallel to the mask and auxiliary electrode. The plates are connected to a voltage divider (14) supplied by the acceleration voltage.

High energy ion injection device

本发明提供一种高能量离子注入装置，精度良好地将已扫描的高能量离子束平行化。本发明的高能量离子注入装置具备：射束生成单元，具有离子源和质量分析装置；高能量多段直线加速单元；高能量射束的偏转单元，将高能量离子束朝向晶片进行方向转换；及射束传输线单元，将已偏转的高能量离子束传输到晶片。射束传输线单元具有射束整形器、高能量用射束扫描器、高能量用射束平行化器及高能量用最终能量过滤器。并且，高能量用射束平行化器为通过电场重复高能量射束的加速和减速并且将扫描束平行化的电场式射束平行化器。

Ion implantation system and control method

Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture ( 46, 176 ) of the ionization chamber ( 80; 175 )). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. ( 20 ), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

An electron spin analyzer

A hemisphere accelerating electrode has a double structure composed of an inner accelerating electrode (3) and an outer accelerating electrode (2). The inner accelerating electrode has an inner introducing inlet and an inner opening, and the outer accelerating electrode has an outer introducing inlet and an outer opening. The aperture angle of the inner introducing inlet is preferably larger than that of the outer introducing inlet by 0.1-5 degrees. Then, the aperture angle of the inner opening is preferably larger than that of the outer opening by 0.1-5 degrees. Moreover, scattered electron detectors (4) have correcting electrodes, respectively, and are arranged in the shifted directions from the introducing direction of electrons by 100-140 degrees.

Electron projection microfabrication system

ELECTRON PROJECTION MICROFABRICATION SYSTEM Abstract of the Disclosure An electron beam image of a microcircuit pattern is pro-jected from an irradiated photocathode window to a resist-coated silicon wafer through two successive lens systems having field-containing regions which communicate through a small aperture in a common pole structure that otherwise shields these regions from each other. The lens region in which the photocathode is located contains electrostatic and magnetic fields for accelerating the electrons and focusing the beam toward a crossover point in the aperture. The region in which the wafer is positioned contains only a magnetic field to correct aberrations of the beam image. The arrangement permits reduction of the image size. Beam regis-tration detectors and deflecting devices are located near the aperture in the common pole structure. Because it is isolated from objects located outside of its own lens region, the electro-static field is not perturbed by these detecting and deflecting devices or by variations in flatness of the wafer surface. Back-scattered electrons emitted from the wafer cannot be driven by the electrostatic field onto parts of the wafer surface where no exposure to electron rays is desired. The photocathode is protected from exposure to contaminants emitted by the wafer coating due to the restricted opening between the lens regions.

Method and apparatus for directing a neutral beam

An apparatus and method for producing a deflection of a Neutral Beam derived from a gas-cluster ion-beam deflects the gas-cluster ion-beam prior to dissociation of gas clusters and removal of tons.

Ion implanter and control method of ion implanter

Ion implantation device and control method of ion implantation device

本發明依據需要提高離子植入裝置的質量分辨率。質量分析裝置(22)具備：質量分析磁鐵(22a)，向藉由引出電極從離子源引出之離子束施加磁場而使其偏向；質量分析狹縫(22b)，設置於質量分析磁鐵(22a)的下游，且使偏向之離子束中所希望的離子種的離子束選擇性地通過；及透鏡裝置(22c)，設置於質量分析磁鐵(22a)與質量分析狹縫(22b)之間，且向朝向質量分析狹縫(22b)之離子束施加磁場及電場中的至少一種來調整離子束的收斂及發散。質量分析裝置(22)在隔著質量分析狹縫(22b)之上游側至下游側為止的規定的調整範圍內，利用透鏡裝置(22c)來改變通過質量分析狹縫(22b)之離子束的收斂位置，由此調整質量分辨率。