DEVICE FOR CONTROLLING AN APPARATUS GENERATING A CHARGED PARTICLE BEAM

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

Charged particle beam system and method of operating a charged particle beam system

The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C.

DEVICE FOR CONTROLLING AN APPARATUS GENERATING A CHARGED PARTICLE BEAM

The invention concerns a device for controlling an apparatus generating a charged particle beam. Said device comprises control means (40) for storing the desired characteristics for the beam (14), determining parameter values for controlling the apparatus (2) based on said characteristics, storing said values and supplying said stored values to the parameters controlling the apparatus. The invention is in particular applicable to the manufacture of nanostructures.

Device for adjusting an apparatus for generating a beam of charged particles

The invention concerns a device for controlling an apparatus generating a charged particle beam. Said device comprises control means (40) for storing the desired characteristics for the beam (14), determining parameter values for controlling the apparatus (2) based on said characteristics, storing said values and supplying said stored values to the parameters controlling the apparatus. The invention is in particular applicable to the manufacture of nanostructures.

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

METHOD FOR ADJUSTING ELECTRIC CURRENT OF MULTI BEAM

Adjusting device of an apparatus for generating a beam of charged particles

This device comprises adjustment means (40) for storing the desired characteristics for the beam (14), determining the values of the adjustment parameters of the apparatus (2) according to its characteristics, storing these values and giving these stored values to the adjustment parameters of the apparatus. The invention is applied in particular to the manufacturing of nanostructures.

FEEDBACK LOOP FOR EMITTER FLASHING

A method and a device for stabilizing the emission current of an emitter of a charged particle beam device are provided. In the method, the emitter is operated under predetermined operation parameters including at least one voltage with a predetermined value. The method includes determining a first value of the emission current under the predetermined operation parameters and flash cleaning the emitter while a first electric field is applied to the emitter. The first electric field is generated by the at least one voltage having a first value of the at least one voltage, wherein the first value of the at least one voltage is provided in dependence of the determined first value of the emission current.

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

METHOD FOR ADJUSTING OPERATING TEMPERATURE OF CATHOD AND ELECTRON BEAM WRITING DEVICE

Charged particle beam writing apparatus and charged particle beam writing method

A charged particle beam writing apparatus includes a limiting aperture member at the downstream side of the emission source, arranged such that its height position can be selectively adjusted, according to condition, to be one of the n-th height position (n being an integer of 1 or more) based on the n-th condition depending on at least one of the height position of the emission source and an emission current value, and the (n+m)th height position (m being an integer of 1 or more) based on the (n+m)th condition depending on at least one of the height position of the emission source and the emission current value, and a shaping aperture member at the downstream side of the electron lens and the limiting aperture member to shape the charged particle beam by letting a part of the charged particle beam pass through a second opening.

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

CHARGED PARTICLE BEAM SYSTEM AND METHOD

A charged particle beam system includes a charged particle source, an extraction electrode, a suppressor electrode, a first variable voltage supply for biasing the extraction electrode with an extraction voltage and a second variable voltage supply for biasing the suppressor electrode with a suppressor voltage.

Charged particle beam system and method

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

Ion-implanting apparatus, ion-implanting method, and device manufactured thereby

An ion-implanting apparatus and method that can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring means.

Device for controlling an apparatus generating a charged particle beam

A device for adjusting a beam of charged particles. The device includes an adjustment mechanism for storing desired characteristics for the beam, determining values of adjustment parameters of the apparatus according to its characteristics, storing these values, and giving these stored values to the adjustment parameters of the apparatus. The device can be applied in particular to the manufacturing of nanostructures.

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

PARTICLE SOURCE FOR PRODUCING A PARTICLE BEAM AND PARTICLE-OPTICAL APPARATUS

A particle source for producing a particle beam includes a particle emitter, a first plate, a first deflector and a second plate with an aperture. The first plate has a smaller aperture, downstream of which a first beam is formed, and a larger aperture, downstream of which a second beam is formed. A controller sets the deflection angle of the deflector so that in a first mode of operation that particles of the first beam pass through the aperture in the second plate and form the particle beam produced by the particle source. The controller sets the deflection angle so that in a second mode of operation that particles of the second beam pass through the aperture in the second plate and form the particle beam produced by the particle source.

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

ADJUSTING DEVICE Of an APPARATUS OF GENERATION Of a BEAM OF PARTICLES CHARGED

METHOD FOR ADJUSTING ELECTRIC CURRENT OF MULTI BEAM

실시예의 멀티 빔의 전류 조정 방법은, 웨넬트 전극을 가지는 열 전자 총으로부터 방출된 전자 빔의 일부가 각각 복수의 개구부를 통과함으로써 형성된 멀티 빔의 전류 밀도 분포를 취득하고, 전류 밀도 분포를 참조하여, 멀티 빔 중, 전류 밀도가 역치 이상인 적어도 1 개의 빔을 선택해, 멀티 빔 중, 전류 밀도가 역치보다 작은 빔을 차폐한 상태에서, 전류 밀도가 역치 이상인 이러한 적어도 1 개의 빔의 전류치를 측정하고, 열 전자 총의 웨넬트 전극에 인가하는 전압과 적어도 1 개의 빔의 전류치와의 상관 관계를 이용하여, 측정된 전류치가 목표 전류치가 되기 위한 웨넬트 전극에 인가하는 목표 전압치를 연산하여, 목표 전압치를 상기 웨넬트 전극에 인가하는 것을 특징으로 한다.

Charged particle source

This invention provides a charged particle source, which comprises an emitter and means of generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

Feldmissions-Elektronenkanone und Verfahren zu deren Steuerung

Es wird ein Verfahren zum stabileren Betrieb einer Feldemissions-Elektronenquelle beschrieben, wobei die charakteristischen Merkmale ausgenutzt werden, wie der Emissionsstrom von einer W-(310)-Kristallebene abnimmt. Die beschriebene Vorrichtung mit einem Strahl geladener Teilchen umfaßt eine Feldemissions-Elektronenquelle (1) mit einem <310>-Wolfram-Einkristall; eine Vakuumkammer (2) mit der Elektronenquelle darin; ein Evakuierungssystem (11) zum Evakuieren der Vakuumkammer; ein mit der Elektronenquelle verbundenes Filament (6) für einen Stromfluß durch die Elektronenquelle und Aufheizen der Elektronenquelle damit; eine Stromversorgung (7) für den Stromfluß durch das Filament; ein Amperemeter (8) zum Messen des Gesamtstrom, der von der Elektronenquelle emittiert wird; und eine Steuereinheit (4) zum Steuern der Stromversorgung derart, daß ein Stromfluß durch das Filament ausgelöst wird, wenn der periodisch gemessene Gesamtstrom im Vergleich zu dem Gesamtstrom von der Elektronenquelle unmittelbar ...

Teilchenquelle zur Erzeugung eines Teilchenstrahls und teilchenoptische Vorrichtung

Eine Teilchenquelle zur Erzeugung eines Teilchenstrahls 51 umfasst einen Teilchenemitter 17a, eine erste Platte 31, einen ersten Ablenker 53 und eine zweite Platte 43 mit einer Öffnung 45. Die erste Platte hat eine kleinere Öffnung 33, hinter der ein erster Strahl 39 gebildet wird und eine größere Öffnung 37, hinter der ein zweiter Strahl 41 gebildet wird. Eine Steuerung 11a stellt in einem ersten Betriebsmodus den Ablenkwinkel des Ablenkers so ein, dass Teilchen des ersten Strahls die Öffnung 45 in der zweiten Platte durchsetzen und den von der Teilchenquelle erzeugten Teilchenstrahl 51 bilden, und sie stellt in einem zweiten Betriebsmodus den Ablenkwinkel so ein, dass Teilchen des zweiten Strahls 41 die Öffnung 45 in der zweiten Platte 43 durchsetzen und den von der Teilchenquelle erzeugten Teilchenstrahl 51 bilden.

FIELD-EMISSION ELECTRON GUN AND METHOD FOR CONTROLLING SAME

Disclosed is a method for using a field-emission electron source more stably by employing the characteristics of how a current emitted from the (310) surface of W attenuates. The disclosed charged-particle-beam device includes: a field-emission electron source (1) consisting of a <310> single crystal of tungsten; a vacuum chamber (2) in which the electron source is arranged; an exhaust system (11) that exhausts gas from the vacuum chamber; a filament (6) that is connected to the electron source and through which a current is passed to heat the electron source; a power source (7) that feeds a current through the filament; an ammeter (8) that measures the total current amount emitted from the electron source; and a controlling section (4) that measures the total current amount periodically and that controls the power source in a manner such that the power source feeds a current to the filament when the total current amount becomes equal to or less than a predetermined ratio of the total current ...

Electron gun, control method and control program thereof, and three-dimensional shaping apparatus

When an emission current is changed, a decrease in brightness of an electron beam is prevented. An electron gun includes a cathode that emits thermoelectrons, a Wehnelt electrode that focuses the thermoelectrons, a control electrode that extracts the thermoelectrons from a distal end of said cathode, an anode that accelerates the thermoelectrons and irradiates a powder with the thermoelectrons as an electron beam, and an optimum condition collection controller that changes at least one of a bias voltage to be applied to the Wehnelt electrode and a control electrode voltage to be applied to the control electrode, and decides a combination of the bias voltage and the control electrode voltage at which the brightness of the electron beam reaches a peak.

Feedback loop for emitter flash cleaning

전하 캐리어 생성 공간으로부터 전기 전하 캐리어들의 추출을 위한 디바이스 및 그런 디바이스를 동작시키기 위한 방법

... 본 발명은 전하 캐리어들의 추출을 위한 적어도 하나의 전극 어셈블리를 포함하는, 전하 캐리어 생성 공간으로부터 전기 전하 캐리어들의 추출을 위한 디바이스에 관한 것이고, 적어도 하나의 전극 어셈블리는 대응하는 오리피스(orifice)들을 가지는 적어도 하나의 제 1 그리드 전극 및 제 2 그리드 전극을 가진다. 제 1 및 제 2 그리드 전극은 각각 적어도 하나의 제 1 전기 전도성 그리드 전극 영역을 포함하고, 제 1 그리드 전극의 적어도 하나의 제 1 그리드 전극 영역은 제 1 층에 구성되고 제 2 그리드 전극의 적어도 하나의 제 1 그리드 전극 영역은 제 2 층에 구성된다. 제 1 층 및 제 2 층은 전극 어셈블리 내의 입자 출구 방향으로 잇따라 배열되고 입자 출구 방향을 따라 제 1 거리만큼 서로 이격되고, 제 1 그리드 전극의 적어도 하나의 제 1 그리드 전극 영역은 제 1 층에 제 1 전기 전도성 층 부분을 형성한다. 게다가, 제 2 전기적 전도성 층 부분은 제 1 층에 형성되고, 제 1 층 부분과 전기적으로 절연된다. 제 2 층 부분은 제 1 그리드 전극 또는 제 2 그리드 전극의 적어도 제 2 전기 전도성 그리드 전극 영역에 의해 형성되며 제 2 층 부분은 제 2 그리드 전극의 적어도 하나의 제 1 그리드 전극 영역에 전기 전도성 방식으로 연결된다. 따라서, 본 발명에 따른 전하 캐리어들의 추출을 위한 디바이스는 전기적으로 스위칭가능한 추출 그리드 전극 어셈블리를 제공하고, 이에 의해 추출된 전하 캐리어들의 입자 빔의 빔 특징들은 수정될 수 있다.

CHARGED PARTICLE BEAM APPARATUS, AND METHOD OF CONTROLLING THE SAME

高輝度でエネルギー幅が狭く、安定した電子線を得ることが出来る荷電粒子線装置を提供する。電界放射電子源、それに電界を印加する電極と、電界放射電子源のまわりの圧力を１×１０ －８ Ｐａ以下に維持する真空排気部とを備え、放射させた電子線のうち、電子線中央の放射角１×１０ －２ ｓｔｒ以内の電子線を用い、電子線の電流の時間に関する二階微分が負または０で、かつ電流の減少度合いが１時間当たり１０％以内となる電流を用いる構成を有する。さらに、電界放射電子源の加熱部と、電子線の電流の検出部とを備え、電界放射電子源を繰り返し加熱することで、放射される電子線の電流を所定の値以上に維持する。

Charged particle beam apparatus, and method of controlling the same

Provided is a charged particle beam apparatus, which can emit a stable electron beam, having high brightness and a narrow energy width. The charged particle beam apparatus comprises a field emission electron source, electrodes for applying an electric field to the field emission electron source, and a vacuum exhaust unit for keeping the pressure around the field emission electron source at 1 108 Pa or less. The apparatus is so constituted as to use such one of the electron beams emitted as has an electron-beam-center radiation angle of 1×102sr or less, and to use the electric current thereof, the second order differentiation of which is negative or zero with respect to the time, and which reduces at a rate of 10% or less per hour. The charged particle beam apparatus further comprises a heating unit for the field emission electron source, and a detection unit for the electric current of the electron beam. The field emission electron source is repeatedly heated to keep the electric current ...

Charged particle beam system and method

A charged particle beam system includes a charged particle source, an extraction electrode, a suppressor electrode, a first variable voltage supply for biasing the extraction electrode with an extraction voltage and a second variable voltage supply for biasing the suppressor electrode with a suppressor voltage.

Electron microscope and method of operating same

There is provided an electron microscope capable of producing good images by reducing contrast nonuniformity. The electron microscope (1) includes: an electron beam source (11) for producing an electron beam; a noise cancelling aperture (12) and an amplifier (42) for detecting a part of the electron beam; an effective value computing circuit (44) and a low frequency cut-off circuit (46) for extracting a DC component of an effective value of a detection signal emanating from the amplifier (42); an image detector (15) for detecting a signal produced in response to impingement of the beam on a sample (A); a preamplifier circuit (20) and an amplifier circuit (30); a divider circuit (54) for performing a division of the output signal (X) from the amplifier circuit (30) by the output signal (Y) from the amplifier circuit (42) and producing a quotient signal indicative of the result of the decision (X/Y); and a multiplier circuit (58) for multiplying the quotient signal by a signal (Z) extracted ...

Compensation of within-subfield linewidth variation in e-beam projection lithography

A method for improving image fidelity on a resist. The method adjusts the intensity distribution of the electron beam such that the feature size at the edges and the center of a subfield have a same width "w". This is accomplished by intentionally increasing the incident intensity where the images are small (more pronounced blurring), and intentionally decreasing the incident intensity where the images are large (less pronounced blurring). This can be achieved, for example, by maintaining a cathode temperature profile which increases or decreases radially by an appropriate amount.

Cathode operating temperature adjusting method, and writing apparatus

A cathode operating temperature adjusting method includes acquiring an approximate equation approximating a correlation between an emission current value in an electron beam source using a cathode and an operating temperature of the cathode at which a bias voltage becomes saturated at the emission current, measuring a current density of an electron beam from the cathode when in the state where an n-th emission current value and an n-th cathode operating temperature are set in the electron beam source, determining whether the measured current density is within a first tolerance range, changing the n-th emission current value to an (n+1)th emission current value when the measured current density is not within the first tolerance range, calculating an operating temperature of the cathode corresponding to the (n+1)th emission current value by the approximate equation, and setting the calculated operating temperature, as an (n+1)th cathode operating temperature, in the electron beam source.

DEVICE FOR CONTROLLING AN APPARATUS GENERATING A CHARGED PARTICLE BEAM

The invention concerns a device for controlling an apparatus generating a charged particle beam. Said device comprises control means (40) for storing the desired characteristics for the beam (14), determining parameter values for controlling the apparatus (2) based on said characteristics, storing said values and supplying said stored values to the parameters controlling the apparatus. The invention is in particular applicable to the manufacture of nanostructures.

Cathode operating temperature adjusting method, and writing apparatus

A cathode operating temperature adjusting method includes acquiring an approximate equation approximating a correlation between an emission current value in an electron beam source using a cathode and an operating temperature of the cathode at which a bias voltage becomes saturated at the emission current, measuring a current density of an electron beam from the cathode when in the state where an n-th emission current value and an n-th cathode operating temperature are set in the electron beam source, determining whether the measured current density is within a first tolerance range, changing the n-th emission current value to an (n+1)th emission current value when the measured current density is not within the first tolerance range, calculating an operating temperature of the cathode corresponding to the (n+1)th emission current value by the approximate equation, and setting the calculated operating temperature, as an (n+1)th cathode operating temperature, in the electron beam source.

GAS FIELD ION MICROSCOPES HAVING MULTIPLE OPERATION MODES

The disclosure relates to ion beams systems, such as gas field ion microscopes, having multiple modes of operation, as well as related methods. In some embodiments, the disclosure provides a method of operating a gas field ion microscope system that includes a gas field ion source, where the gas field ion source includes a tip including a plurality of atoms. The method can include operating the gas field ion microscope system in a first mode including interacting a first ion beam with a sample, where at least about 80% of the ions in the first ion beam are generated by a first number of atoms of the plurality of atoms of the tip. The method can also include operating the gas field ion microscope system in a second mode in a second mode including interacting a second ion beam with the sample, where at least about 80% of the ions in the second ion beam are generated by a second number of atoms of the plurality of atoms of the tip. The first mode is different from the second mode, and the ...

Charged particle beam system and method of operating a charged particle beam system

The present disclosure relates to a charged particle beam system comprising a charged particle beam source, a charged particle column, a sample chamber, a plurality of electrically powered devices arranged within or at either one of the charged particle column, the charged particle beam source and the sample chamber, and at least one first converter to convert an electrical AC voltage power into an electrical DC voltage. The first converter is positioned at a distance from either of the charged particle beam source, the charged particle column and the charged particle chamber, and all elements of the plurality of electrically powered devices, when operated during operation of the charged particle beam source, are configured to be exclusively powered by the DC voltage provided by the converter.

FIELD EMISSION TYPE ELECTRON GUN AND ELECTRON BEAM APPLICATION APPARATUS USING THE SAME

PROBLEM TO BE SOLVED: To provide a field emission type electron gun which continuously operates for a long time duration and does not require an adjustment of an optical axis during continuous operation, and its operating method. SOLUTION: In the field emission type electron gun comprising a field emission type cathode constructed of a single fiber-like carbon substance and a conductive substrate using it, an extraction electrode for field-emitting electrons, an acceleration electrode for accelerating the electrons, an extraction power supply for applying a voltage to the extraction electrode, an acceleration power supply for applying a voltage to the acceleration electrode and means for detecting and monitoring a part of an emission current; when the emission variation exceeds a predetermined value, an extraction voltage is automatically boosted for a fixed time duration to increase the emission current up to the predetermined value and a boosted extraction voltage, a boosting time and ...

ADJUSTING DEVICE OF AN APPARATUS FOR GENERATING A BEAM OF CHARGED PARTICLES

An adjusting device of an apparatus for generating a beam of charged particles, wherein said beam is for interacting with a target and wherein said adjusting device comprises interface means for receiving, from a user of the apparatus, a set of desired values of characteristics of the beam of charged particles; means for determining a set of nominal values of adjusting parameters of the apparatus, corresponding to said characteristics and for passing them to the apparatus; means for measuring said adjusting parameters of the apparatus, and for computing corresponding values of said characteristics of the beam; and means for determining whether a correction of said values of adjusting parameters is necessary.

Charged particle beam system and method of operating a charged particle beam system

The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases comprise neon or a noble gas with atoms having a mass larger than neon, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole. A surface of the extractor electrode facing the tip can be made of a material having a negative secondary ion sputter rate of less than 10 −5 per incident neon ion.

Particle source for producing a particle beam and particle-optical apparatus

A particle source for producing a particle beam includes a particle emitter, a first plate, a first deflector and a second plate with an aperture. The first plate has a smaller aperture, downstream of which a first beam is formed, and a larger aperture, downstream of which a second beam is formed. A controller sets the deflection angle of the deflector so that in a first mode of operation that particles of the first beam pass through the aperture in the second plate and form the particle beam produced by the particle source. The controller sets the deflection angle so that in a second mode of operation that particles of the second beam pass through the aperture in the second plate and form the particle beam produced by the particle source.

Charged Particle Source

This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD

A charged particle beam writing apparatus includes a limiting aperture member at the downstream side of the emission source, arranged such that its height position can be selectively adjusted, according to condition, to be one of the n-th height position (n being an integer of 1 or more) based on the n-th condition depending on at least one of the height position of the emission source and an emission current value, and the (n+m)th height position (m being an integer of 1 or more) based on the (n+m)th condition depending on at least one of the height position of the emission source and the emission current value, and a shaping aperture member at the downstream side of the electron lens and the limiting aperture member to shape the charged particle beam by letting a part of the charged particle beam pass through a second opening.

GAS FIELD ION MICROSCOPES HAVING MULTIPLE OPERATION MODES

The disclosure relates to ion beams systems, such as gas field ion microscopes, having multiple modes of operation, as well as related methods. In some embodiments, the disclosure provides a method of operating a gas field ion microscope system that includes a gas field ion source, where the gas field ion source includes a tip including a plurality of atoms. The method can include operating the gas field ion microscope system in a first mode including interacting a first ion beam with a sample, where at least about 80% of the ions in the first ion beam are generated by a first number of atoms of the plurality of atoms of the tip. The method can also include operating the gas field ion microscope system in a second mode in a second mode including interacting a second ion beam with the sample, where at least about 80% of the ions in the second ion beam are generated by a second number of atoms of the plurality of atoms of the tip. The first mode is different from the second mode, and the first number of atoms is different from the second number of atoms.

Feldemissions-Elektronenkanone und Verfahren zu deren Steuerung

Vorrichtung mit einem Strahl geladener Teilchen, mit einer Feldemissions-Elektronenquelle (1) mit einem <310>-Wolfram-Einkristall; einer Vakuumkammer (2) für die Feldemissions-Elektronenquelle (1); einer Extraktionselektrode (3) zum Durchlassen eines Probenstroms (Ip) als Teil eines Gesamtstroms (Ie), der von der Feldemissions-Elektronenquelle (1) emittiert wird; einem Evakuierungssystem (11) zum Evakuieren der Vakuumkammer (2); einem Filament (6), das mit der Feldemissions-Elektronenquelle (1) verbunden ist und durch das zum Aufheizen der Feldemissions-Elektronenquelle (1) ein Strom fließen kann; einer Stromversorgung (7) für den Strom durch das Filament (6); einer Steuereinheit (4) zum Steuern der Stromversorgung (7) für den Strom durch das Filament (6), dadurch gekennzeichnet, dass die Vorrichtung ein Amperemeter (8) zum Messen des von der Feldemissions-Elektronenquelle (1) emittierten Gesamtstroms (Ie) und zum Senden der Messwerte zu der Steuereinheit (4) aufweist; und dass die Steuereinheit ...

Cold cathode field emission electron gun and its application to electron beam instruments

The present invention provides an electron beam instrument in which variation of the trajectory of the electron beams can be suppressed even when the voltage applied to the first extractor electrode (2) is controlled in order to stabilize the emission current amount of the electron beams. The electron beam instrument has a cold cathode field emission electron gun. The cold cathode field emission electron gun has a cold cathode (1), a first extractor electrode (2) and a second extractor electrode (3). Distance (L1) between the cold cathode and the first extractor electrode is set to be shorter than distance (L2) between the first extractor electrode and the second extractor electrode. Voltage (V1) applied to the first extractor electrode is increased when current amount of the electron beams emitted from the cold cathode is attenuated.

Charged particle beam system and method of operating a charged particle beam system

The present disclosure relates to a charged particle beam system, comprising a noble gas field ion beam source, a charged particle beam column, and a housing defining a first vacuum region and a second vacuum region. A noble gas field ion beam source is arranged within the first vacuum region. A first mechanical vacuum pump is functionally attached to the first vacuum region, an ion getter pump is attached to the charged particle beam column, and a gas supply is attached to the first vacuum region configured to supply a noble gas to the noble gas field ion beam source.

Vorrichtung mit geladenem Teilchenstrahl und Verfahren zum Steuern der Vorrichtung

Vorrichtung mit einem geladenen Teilchenstrahl mit einer Feldemissions-Elektronenquelle und einer Elektrode zum Anlegen eines elektrischen Feldes an die Feldemissions-Elektronenquelle, wobei die Vorrichtung umfaßt eine Vakuum-Abpumpeinheit zum Aufrechterhalten eines Drucks um die Feldemissions-Elektronenquelle von weniger als 1 × 10 –8 Pa, wobei von den von der Feldemissions-Elektronenquelle emittierten Elektronenstrahlen ein Elektronenstrahl mit einem zentralen Abstrahlwinkel innerhalb von 1 × 10 –2 str verwendet wird, und wobei die zweite Ableitung des Stromes des Elektronenstrahls nach der Zeit für mindestens eine Stunde nach einer Schnellverdampfung an der Feldemissions-Elektronenquelle negativ oder Null ist. A charged particle beam device comprising a field emission electron source and an electrode for applying an electric field to the field emission electron source, the device comprising a vacuum exhaust unit for maintaining a pressure around the field emission electron source of less than 1 × 10 -8 Pa, wherein an electron beam having a central radiation angle within 1 × 10 -2 str is used by the electron beams emitted from the field emission electron source, and wherein the second derivative of the current of the electron beam after the time for at least one hour after a flash evaporation at the field emission Electron source is negative or zero.

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

The present disclosure relates to a charged particle beam system, comprising a noble gas field ion beam source, a charged particle beam column, and a housing defining a first vacuum region and a second vacuum region. A noble gas field ion beam source is arranged within the first vacuum region. A first mechanical vacuum pump is functionally attached to the first vacuum region, an ion getter pump is attached to the charged particle beam column, and a gas supply is attached to the first vacuum region configured to supply a noble gas to the noble gas field ion beam source.

Adjusting device of an apparatus for generating a beam of charged particles

An adjusting device of an apparatus for generating a beam of charged particles, wherein said beam is for interacting with a target and wherein said adjusting device comprises interface means for receiving, from a user of the apparatus, a set of desired values of characteristics of the beam of charged particles; means for determining a set of nominal values of adjusting parameters of the apparatus, corresponding to said characteristics and for passing them to the apparatus; means for measuring said adjusting parameters of the apparatus, and for computing corresponding values of said characteristics of the beam; and means for determining whether a correction of said values of adjusting parameters is necessary.

ELECTRON GUN, CONTROL METHOD AND CONTROL PROGRAM THEREOF, AND THREE-DIMENSIONAL SHAPING APPARATUS

When an emission current is changed, a decrease in brightness of an electron beam is prevented. An electron gun includes a cathode that emits thermoelectrons, a Wehnelt electrode that focuses the thermoelectrons, a control electrode that extracts the thermoelectrons from a distal end of said cathode, an anode that accelerates the thermoelectrons and irradiates a powder with the thermoelectrons as an electron beam, and an optimum condition collection controller that changes at least one of a bias voltage to be applied to the Wehnelt electrode and a control electrode voltage to be applied to the control electrode, and decides a combination of the bias voltage and the control electrode voltage at which the brightness of the electron beam reaches a peak.

Vorrichtung mit geladenem Teilchenstrahl und Verfahren zum Steuern der Vorrichtung

Vorrichtung mit einem geladenen Teilchenstrahl mit einer Feldemissions-Elektronenquelle (4) und einer Elektrode (11) zum Anlegen eines elektrischen Feldes an die Feldemissions-Elektronenquelle, wobei die Vorrichtung umfaßteine Vakuum-Abpumpeinheit (20, 23) zum Aufrechterhalten eines Drucks um die Feldemissions-Elektronenquelle von weniger als 1 × 10Pa,eine Heizeinheit (16) für die Feldemissions-Elektronenquelle undeine Steuereinheit (17) zum Steuern der Heizeinheit,wobei von den von der Feldemissions-Elektronenquelle emittierten Elektronenstrahlen ein Elektronenstrahl mit einem zentralen Abstrahlwinkel innerhalb von 1×10sr verwendet wird, undwobei die Steuereinheit dazu ausgelegt ist, die Heizeinheit derart zu steuern, dass sie die Feldemissions-Elektronenquelle heizt, wenn die zweite Ableitung des Stromes des Elektronenstrahls nach der Zeit nach einer Schnellverdampfung an der Feldemissions-Elektronenquelle negativ oder Null ist.

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip. 1. A gas field ion source , comprising:a gun housing,an electrically conductive gun can base attached to the gun housing,an inner tube mounted to the gun can base, the inner tube comprising an electrically isolating material,an electrically conductive tip attached to the inner tube,an outer tube mounted to the gun can base, the outer tube comprising an electrically isolating material, andan extractor electrode attached to the outer tube, the extractor electrode having an opening for the passage of ions generated in proximity to the electrically conductive tip.2. The gas field ion source of claim 1 , further comprising a gas supply comprising a terminating tube attached to the gun can base.3. The gas field ion source of claim 2 , wherein the gas supply is configured to supply a first gas in a first mode of operation of the gas field ion source claim 2 , the gas supply is configured to supply a second gas in a second mode of operation claim 2 , and the first gas is different from the second gas.4. The gas field ion source of claim 2 , further comprising a vacuum pump operatively connected to the outer housing claim 2 , wherein the vacuum pump is configured to evacuate gas out of the outer housing.5. The gas field ion source of claim 1 , further comprising a thermal conductor connected to gun can base claim 1 , wherein the thermal conductor is thermally connected to a cooling ...

CHARGED PARTICLE SOURCE

This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

Charged Particle Source

This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero. 1. A condenser lens system , comprising:a first magnetic lens above an electron source; anda second magnetic electron source below the electron source,wherein when a first magnetic field generated by the first magnetic lens is anti-symmetric to a second magnetic field generated by said second magnetic lens at a tip of the electron source, a compound magnetic field superposed by the first and second magnetic field is weakest at the tip and largest immediately long an optical axis of the electron source, and the compound magnetic field provides a high resolution mode,wherein when the first magnetic field generated by the first magnetic lens is symmetric to the second magnetic field generated by the second magnetic lens at the tip of the electron source, the compound magnetic field superposed by the first and second magnetic field is largest at the tip of the electron source, and the compound magnetic field provides a high throughput mode.2. The condenser lens system according to claim 1 , wherein the weakest magnetic field at the tip of the electron source is zero.3. The condenser lens system according to claim 2 , wherein the first magnetic lens includes a first excitation coil encompassed by a first yoke.4. The condenser lens system according to claim 3 , wherein the second magnetic lens includes a second excitation coil encompassed by a second yoke.5. The condenser lens system according to claim 4 , further comprising a vacuum tube encompassing the electron source and ...

Charged Particle Source

This invention provides a charged particle source, which comprises an emitter and means of generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

Electron Microscope and Method of Operating Same

There is provided an electron microscope capable of producing good images by reducing contrast nonuniformity. The electron microscope ( 1 ) includes: an electron beam source ( 11 ) for producing an electron beam; a noise cancelling aperture ( 12 ) and an amplifier ( 42 ) for detecting a part of the electron beam; an effective value computing circuit ( 44 ) and a low frequency cut-off circuit ( 46 ) for extracting a DC component of an effective value of a detection signal emanating from the amplifier ( 42 ); an image detector ( 15 ) for detecting a signal produced in response to impingement of the beam on a sample (A); a preamplifier circuit ( 20 ) and an amplifier circuit ( 30 ); a divider circuit ( 54 ) for performing a division of the output signal (X) from the amplifier circuit ( 30 ) by the output signal (Y) from the amplifier circuit ( 42 ) and producing a quotient signal indicative of the result of the decision (X/Y); and a multiplier circuit ( 58 ) for multiplying the quotient signal by a signal (Z) extracted by the low frequency cut-off circuit ( 46 ).

CHARGED PARTICLE SOURCE

This invention provides a charged particle source, which comprises an emitter and means for generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. A method for providing an electron source for an electron beam inspection tool , comprising:providing, with an emitter, an electron beam along an optical axis of the electron beam inspection tool;extracting, with an extraction electrode, the electron beam from a tip of the emitter; andgenerating, with a magnetic lens, a magnetic field between the tip of the emitter and the extraction electrode, wherein a strength of the magnetic field increases to a peak point away from the tip of the emitter toward the extraction electrode.7. The method of claim 6 , wherein the strength of the magnetic field is near or at zero at the tip of the emitter.8. The method of claim 7 , wherein the strength of the magnetic field increases along the optical axis away from the tip of the emitter until to the peak point.9. The method of claim 8 , wherein the strength of the magnetic field decreases along the optical axis after the peak point proximate to the extraction electrode.10. The method of claim 9 , wherein the strength of the magnetic field is near or at zero at the extraction electrode.11. The method of claim 8 , wherein the tip of the emitter is a portion of the emitter from which a plurality of electrons are emitted to form the electron beam claim 8 , and the tip of the emitter is on an emitting plane which is perpendicular to the optical axis.12. The method of claim 11 , wherein the magnetic lens is located on the ...

Device for the Extraction of Electrical Charge Carriers from a Charge Carrier Generation Space and Method for Operating Such a Device

The invention relates to a device for extracting electrical charge carriers from a charge carrier generation chamber with at least one electrode arrangement for extracting charge carriers, wherein the at least one electrode arrangement has at least a first grid electrode and a second grid electrode with corresponding openings. The first and the second grid electrode each contain at least one first electrically conductive grid electrode region, wherein the at least one first grid electrode region of the first grid electrode is configured in a first layer and the at least one first grid electrode region of the second grid electrode is configured in a second layer. The first layer and the second layer are arranged one after the other within the electrode arrangement in the particle emission direction and are spaced from one another by a first distance along the particle emission direction, wherein the at least one first grid electrode region of the first grid electrode forms a first electrically conductive layer portion in the first layer. In addition, a second electrically conductive layer portion, which is electrically insulated from the first layer portion, is configured in the first layer. The second layer portion is formed by at least one second electrically conductive grid electrode region of the first grid electrode or of the second grid electrode, and the second layer portion is electrically conductively connected to the at least one first grid electrode region of the second grid electrode. The device according to the invention for extracting charge carriers thus represents an electrically switchable extraction grid electrode arrangement by the aid of which the beam characteristics of a particle beam of extracted charge carriers can be changed. 1. A device for extracting electrical charge carriers from a charge carrier generation chamber with at least one electrode arrangement for extracting charge carriers , wherein the at least one electrode arrangement has ...

Gas field ion microscopes having multiple operation modes

The disclosure relates to ion beams systems, such as gas field ion microscopes, having multiple modes of operation, as well as related methods. In some embodiments, the disclosure provides a method of operating a gas field ion microscope system that includes a gas field ion source, where the gas field ion source includes a tip including a plurality of atoms. The method can include operating the gas field ion microscope system in a first mode including interacting a first ion beam with a sample, where at least about 80% of the ions in the first ion beam are generated by a first number of atoms of the plurality of atoms of the tip. The method can also include operating the gas field ion microscope system in a second mode in a second mode including interacting a second ion beam with the sample, where at least about 80% of the ions in the second ion beam are generated by a second number of atoms of the plurality of atoms of the tip. The first mode is different from the second mode, and the first number of atoms is different from the second number of atoms.

Gas field ion microscopes having multiple operation modes

The disclosure relates to ion beams systems, such as gas field ion microscopes, having multiple modes of operation, as well as related methods. In some embodiments, the disclosure provides a method of operating a gas field ion microscope system that includes a gas field ion source, where the gas field ion source includes a tip including a plurality of atoms.

Method for generating the equipment of spatial extraction carrier from carrier and for running this equipment

本发明涉及一种用于从载流子生成空间提取载流子的设备，其具有至少一个用于提取载流子的电极装置，其中，所述至少一个电极装置至少具有一个第一栅电极和一个第二栅电极，它们具有相对应的开口。所述第一和第二栅电极分别包含至少一个导电的第一栅电极区域，其中，所述第一栅电极的所述至少一个第一栅电极区域构成在第一层中，而所述第二栅电极的所述至少一个第一栅电极区域构成在第二层中。第一层和第二层沿粒子出射方向依次设置在电极装置内部并且相互间通过第一间距沿着粒子出射方向间隔开，其中，所述第一栅电极的所述至少一个第一栅电极区域在所述第一层中形成导电的第一层部分。此外，在所述第一层中构成有导电的第二层部分，该第二层部分与第一层部分电绝缘。所述第二层部分通过所述第一栅电极或所述第二栅电极的至少一个导电的第二栅电极区域形成，并且所述第二层部分与所述第二栅电极的所述至少一个第一栅电极区域导电连接。根据本发明的用于提取载流子的设备因此是可电气切换的提取栅电极装置，借助所述设备能够改变由提取的载流子构成的粒子射束的射束特性。

Field emission gun and electron beam instruments

A field-emission electron gun includes a field-emission cathode including a single fiber-like carbon substance and an electrically-conductive substrate for supporting the substance, an extractor for field-emitting electrons, an accelerating electrode for accelerating the electrons, an extracting power-supply for applying extracting voltage to the extractor, an accelerating power-supply for applying accelerating voltage to the accelerating electrode, and a unit for detecting and monitoring a part of emission current. In this field-emission electron gun, if emission-variation amount has become larger than a predetermined value, the extracting voltage is automatically boosted for a constant length of time, thereby increasing the emission current up to a predetermined value. Further, extracting voltage at the time of boosting the extracting voltage, voltage-boosting time, and the emission current are recorded, then being feed-backed to voltage-boosting conditions for the next-time extracting voltage. Moreover, the accelerating voltage is varied in correspondence with the voltage-boosting of the extracting voltage.

Field emission electron gun and control method thereof

Charged particle beam system and method of operating a charged particle beam system

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip.

Electron gun, electron ray applying device, and electron beam projecting method

本發明係提供一種能夠延長光電陰極的壽命之電子槍，其包括在第一表面形成有光電陰極膜的基板、用於將激發光照射在光電陰極膜的光源、陽極、用於加熱光電陰極膜及/或基板的加熱裝置、以及用以調整加熱裝置的加熱溫度之輸出調整裝置。

Charged particle source

This invention provides a charged particle source, which comprises an emitter and means of generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

Beam system with charged particles and method therefor

Ein Verfahren und ein Strahlsystem mit geladenen Teilchen für ein automatisiertes Langzeitbearbeiten einer Probe durch einen Strahl geladener Teilchen werden offenbart. Das Strahlsystem mit geladenen Teilchen umfasst eine Quelle geladener Teilchen mit einer geladene Teilchen emittierenden Spitze, eine Extraktionselektrode, eine Suppressorelektrode, eine erste variable Spannungsversorgung zum Vorspannen der Extraktionselektrode mit einer Extraktionsspannung und eine zweite variable Spannungsversorgung zum Vorspannen der Suppressorelektrode mit einer Suppressorspannung. Das System umfasst ferner eine Steuerung, die ausgelegt ist zum Bearbeiten der Probe durch Scannen eines fokussierten Strahls geladener Teilchen über die Oberfläche der Probe, wobei der fokussierte Strahl geladener Teilchen einen Strahlstrom aufweist, während Bearbeiten der Probe, Messen des Strahlstroms und der Suppressorspannung, Einstellen der Suppressorspannung innerhalb eines ersten vordefinierten Bereichs zum Beibehalten des Strahlstroms innerhalb eines vordefinierten zweiten Bereichs, Unterbrechen der Bearbeitung der Probe, wenn der Strahlstrom aus dem zweiten Bereich gerät, weil sich die Suppressorspannung dicht an einer Grenze des ersten Bereichs befindet, Ausführen eines Quellenwiederherstellungsprozesses; und Weiterführen der Bearbeitung der Probe nach dem Ausführen des Quellenwiederherstellungsprozesses. A charged particle beam method and system for automated long term processing of a sample by a charged particle beam are disclosed. The charged particle beam system comprises a charged particle source having a charged particle emitting tip, an extraction electrode, a suppressor electrode, a first variable voltage supply for biasing the extraction electrode with an extraction voltage, and a second variable voltage supply for biasing the suppressor electrode with a suppressor voltage. The system further includes a controller configured to process the sample by scanning a focused charged ...

Spatially phase-modulated electron wave generation device

This spatially phase-modulated electron wave generation device which generates spatially phase-modulated electron waves is provided with a laser light output device, a spatial optical phase modulator, and an optical cathode. The optical cathode includes a semiconductor film having an NEA film formed on a surface thereof. The semiconductor film has a thickness smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by the electron transfer rate in the semiconductor film. According to this configuration, a spatial distribution of the phase and a spatial distribution of the intensity of spatially phase-modulated light are transferred to electron waves, and the electron waves emitted from the NEA film are modulated to the spatial distribution of the phase and the spatial distribution of the intensity of the light. Because it is possible to modulate, using the optical spatial phase modulation technology, the spatial distribution of the phase of light as intended, it is possible to generate electron waves in which the spatial distribution of phase has been modulated as intended.

Cold cathode field emission electron gun and its application to electron beam instruments

The present invention provides an electron beam instrument in which variation of the trajectory of the electron beams can be suppressed even when the voltage applied to the first extractor electrode is controlled in order to stabilize the emission current amount of the electron beams. The electron beam instrument has a cold cathode field emission electron gun. The cold cathode field emission electron gun has a cold cathode, a first extractor electrode and a second extractor electrode. Distance between the cold cathode and the first extractor electrode is set to be shorter than distance between the first extractor electrode and the second extractor electrode. Voltage applied to the first extractor electrode is increased when current amount of the electron beams emitted from the cold cathode is attenuated.

Charged particle beam device and method of controlling the device

Gas field ion microscopes having multiple operation modes

Current regulation method of multiple beams

A current regulation method of multiple beams includes acquiring a current density distribution; selecting at least one beam whose current density is equal to or more than a threshold; measuring a current value of the at least one beam respectively by varying a voltage applied to the Wehnelt electrode and acquiring a correlation between the voltage and the current value; moving a stage to a position where the at least one beam is allowed to enter a current detector each time writing of a stripe region is completed; measuring, after moving the stage, a current value of the at least one beam while beams of the multiple beams whose current density is less than the threshold are blocked; operating a target voltage value applied to the Wehnelt electrode to cause the current value measured to be a target current value; and applying the target voltage value to the Wehnelt electrode.

帶電粒子槍及帶電粒子束系統

提供一種能夠抑制引出電極中的不均一的溫度分布之電子槍(901)及測長SEM(900)。電子槍(901)，具備：帶電粒子源(1)；及引出電極(3)，從帶電粒子源(1)引出帶電粒子，並且使帶電粒子的一部分通過，而將帶電粒子的其他一部分遮蔽；及輔助構造(5)，與引出電極(3)接觸。測長SEM(900)，具備上述的電子槍(901)、及控制電子槍(901)的電腦系統(920)。

멀티 빔의 전류 조정 방법

실시예의 멀티 빔의 전류 조정 방법은, 웨넬트 전극을 가지는 열 전자 총으로부터 방출된 전자 빔의 일부가 각각 복수의 개구부를 통과함으로써 형성된 멀티 빔의 전류 밀도 분포를 취득하고, 전류 밀도 분포를 참조하여, 멀티 빔 중, 전류 밀도가 역치 이상인 적어도 1 개의 빔을 선택해, 멀티 빔 중, 전류 밀도가 역치보다 작은 빔을 차폐한 상태에서, 전류 밀도가 역치 이상인 이러한 적어도 1 개의 빔의 전류치를 측정하고, 열 전자 총의 웨넬트 전극에 인가하는 전압과 적어도 1 개의 빔의 전류치와의 상관 관계를 이용하여, 측정된 전류치가 목표 전류치가 되기 위한 웨넬트 전극에 인가하는 목표 전압치를 연산하여, 목표 전압치를 상기 웨넬트 전극에 인가하는 것을 특징으로 한다.

マルチビームの電流調整方法

【課題】マルチビーム描画を行う場合の時間の経過に伴う電流密度分布の変化を抑制する電流調整方法を提供する。 【解決手段】マルチビームの電流密度分布を参照して、マルチビームのうち、電流密度が閾値以上の参照ビームを選択する工程と、ウェネルト電圧と参照ビームの電流値との相関関係を取得する工程と、ストライプ領域の描画が終了する毎に、参照ビームがステージに配置された電流検出器に入射可能な位置にステージを移動させる工程と、ステージを移動させた後、ストライプ領域の描画が終了する毎に、参照ビームの電流値を測定する工程と、相関関係を用いて、測定された電流値が目標電流値になるためのウェネルト電極に印加する目標電圧値を演算する工程と、目標電圧値をウェネルト電極に印加する工程と、を備える。 【選択図】図６

Current regulation method of multiple beams

A current regulation method of multiple beams includes acquiring a current density distribution; selecting at least one beam whose current density is equal to or more than a threshold; measuring a current value of the at least one beam respectively by varying a voltage applied to the Wehnelt electrode and acquiring a correlation between the voltage and the current value; moving a stage to a position where the at least one beam is allowed to enter a current detector each time writing of a stripe region is completed; measuring, after moving the stage, a current value of the at least one beam while beams of the multiple beams whose current density is less than the threshold are blocked; operating a target voltage value applied to the Wehnelt electrode to cause the current value measured to be a target current value; and applying the target voltage value to the Wehnelt electrode.

荷電粒子銃および荷電粒子ビームシステム

进行了空间相位调制的电子波的发生装置

产生进行了空间相位调制的电子波。具备激光输出装置、空间光相位调制器以及光阴极。光阴极在表面具有形成有NEA膜的半导体膜，半导体膜的厚度比半导体膜中的电子的相干弛豫时间乘以半导体膜中的电子的移动速度得到的值薄。根据该结构，进行了空间相位调制的光的相位的空间分布和强度的空间分布传写到电子波，从NEA膜放出的电子波被调制成光的相位的空间分布和强度的空间分布。通过光的空间相位调制技术，能够对光的相位的空间分布如所预期地进行调制，因此能够产生对相位的空间分布如所预期地进行了调制的电子波。

Method and apparatus for usable beam current and brightness in schottky thermal field emission (tfe)

A system for determining Schottky thermal field emission (TFE) usable current and brightness of a Schottky TFE source is provided, the system including: one or more processors, configured to: acquire and store in a memory a Schottky TFE emission image in a digital format; and determine Schottky TFE usable beam current and brightness for the based on experimentally developed algorithms that utilize usable current criteria and usable emission current density, the usable current criteria being generated based on properties of a central beam component and an outer beam component of Schottky TFE beam current.

Electron gun and electron microscope

An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A contiguous TiN layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the TiN layer.

電子銃、電子線適用装置、および、電子ビームの射出方法

【課題】電子銃が有する構成部材のみで、照射対象の所望の箇所に所望の電子ビームパラメータを有する電子ビームを照射できるように設定可能な電子銃を提供する。 【解決手段】光源２と、光源２からの受光に応じて、放出可能な電子を生成するフォトカソード３と、フォトカソード３との間で電界を形成することができ、形成した電界により放出可能な電子を引き出し、電子ビームＢを形成するアノード４と、制御部５と、を含む電子銃１であって、制御部５は、電子ビームＢの射出回数を設定し、射出する電子ビームＢ毎に電子ビームパラメータを設定する、または、電子ビームＢの射出時間を設定し、射出する電子ビームＢの電子ビームパラメータを射出時間に関連付けて設定する、電子銃１。 【選択図】図１

電子槍、電子射線應用裝置以及電子束的射出方法

本發明係提供一種僅以電子槍所具有的構成構件，即能夠設定為可對於照射對象之所希望的位置照射具有所希望之電子束參數之電子束的電子槍，其包括：光源；光電陰極，係依據來自前述光源的受光，產生可射出的電子；陽極，係可在與前述光電陰極之間形成電場，且藉由所形成的電場引出前述可射出的電子，以形成電子束；及控制部；前述控制部係設定前述電子束的射出次數，且依各射出的電子束設定電子束參數，或者，設定前述電子束的射出時間，且將射出之電子束的電子束參數與前述射出時間建立關連進行設定。

电子枪、电子射线应用装置以及电子束的射出方法

本发明提供一种仅以电子枪所具有的结构部件，即能够设定为可对于照射对象的所希望的位置照射具有所希望的电子束参数的电子束的电子枪，其包括：光源；光电阴极，依据来自所述光源的受光，产生可射出的电子；阳极，可在与所述光电阴极之间形成电场，且通过所形成的电场引出所述可射出的电子，以形成电子束；以及控制部；所述控制部设定所述电子束的射出次数，且按照各射出的电子束设定电子束参数，或者，设定所述电子束的射出时间，且将射出的电子束的电子束参数与所述射出时间关联起来进行设定。

전자총, 전자선 적용 장치, 및, 전자 빔의 사출 방법

전자총이 갖는 구성 부재만으로, 조사 대상의 원하는 개소에 원하는 전자 빔 파라미터를 갖는 전자 빔을 조사할 수 있도록 설정 가능한 전자총을 제공한다. 광원과, 상기 광원으로부터의 수광에 따라, 방출 가능한 전자를 생성하는 포토캐소드와, 상기 포토캐소드와의 사이에서 전계를 형성할 수 있고, 형성한 전계에 의해 상기 방출 가능한 전자를 인출하여, 전자 빔을 형성하는 애노드와, 제어부 를 포함하는 전자총으로서, 상기 제어부는, 상기 전자 빔의 사출 회수를 설정하고, 사출하는 전자 빔마다 전자 빔 파라미터를 설정하거나, 또는, 상기 전자 빔의 사출 시간을 설정하고, 사출하는 전자 빔의 전자 빔 파라미터를 상기 사출 시간에 관련지어 설정하는, 전자총 에 의해 과제를 해결할 수 있다.

Electron generation and delivery system for contamination sensitive emitters

Contamination may be removed from a field emitter unit during operation of the emitter unit in an environment at a pressure that lies within a range between 10 −6 torr and 10 −8 torr. At regular predetermined intervals an electron beam from an emitter tip may be deflected away from a path through a beam defining aperture and onto an electron collector. An electron beam current to the electron collector may be determined and the emitter unit may be flash heated if the current to the electron collector is below a threshold. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

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带电粒子枪以及带电粒子束系统

本发明提供能够抑制引出电极中的不均匀的温度分布的电子枪(901)以及测长SEM(900)。电子枪(901)具备：带电粒子源(1)；引出电极(3)，其从带电粒子源(1)引出带电粒子，并且使带电粒子的一部分通过，遮蔽带电粒子的另一部分；以及辅助结构(5)，其与引出电极(3)接触。测长SEM(900)具备上述的电子枪(901)和控制电子枪(901)的计算机系统(920)。

하전 입자총 및 하전 입자빔 시스템

인출 전극에 있어서의 불균일한 온도 분포를 억제할 수 있는 전자총(901) 및 측장 SEM(900)을 제공한다. 전자총(901)은, 하전 입자원(1)과, 하전 입자원(1)으로부터 하전 입자를 인출함과 동시에, 하전 입자의 일부를 통과시키고, 하전 입자의 다른 일부를 차폐하는 인출 전극(3)과, 인출 전극에 접촉하는 보조 구조(5)를 구비한다. 측장 SEM(900)은, 상술의 전자총(901)과, 전자총(901)을 제어하는 컴퓨터 시스템(920)을 구비한다.

Charged Particle Gun and Charged Particle Beam System

An electron gun 901 capable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEM 900 are provided. The electron gun 901 is equipped with: a charged particle source 1; an extraction electrode 3 for extracting charged particles from the charged particle source 1 and allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structure 5 disposed in contact with the extraction electrode 3. The length-measuring SEM 900 is equipped with the electron gun 901 and a computer system 920 for controlling the electron gun 901.

帶電粒子槍及帶電粒子束系統

提供一種能夠抑制引出電極中的不均一的溫度分布之電子槍(901)及測長SEM(900)。電子槍(901)，具備：帶電粒子源(1)；及引出電極(3)，從帶電粒子源(1)引出帶電粒子，並且使帶電粒子的一部分通過，而將帶電粒子的其他一部分遮蔽；及輔助構造(5)，與引出電極(3)接觸。測長SEM(900)，具備上述的電子槍(901)、及控制電子槍(901)的電腦系統(920)。

Electron gun and electron microscope

An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A contiguous TiN layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the TiN layer.

Electron gun, electron ray applying device, and electron beam projecting method

Electron gun, electron beam applicator, and emission method of electron beam

Provided is an electron gun that can have a setting to make it possible to irradiate a desired location on an irradiation target with an electron beam having a desired electron beam parameter by using only the component included in the electron gun. This object can be achieved by an electron gun including: a light source; a photocathode configured to generate releasable electrons in response to receiving light from the light source; an anode configured to generate an electric field between the photocathode and the anode, extract the releasable electrons by the generated electric field, and form an electron beam; and a control unit, and the control unit sets the number of emission times of the electron beam and sets an electron beam parameter for each emitting electron beam, or sets an emission duration of the electron beam and sets an electron beam parameter of an emitting electron beam in association with the emission duration.

Method and apparatus for usable beam current and brightness in Schottky thermal field emission (TFE)

The present disclosure is related to a Schottky thermal field emission (TFE) source for emitting an electron beam. Exemplary embodiments can provide the acquisition of high-resolution emission images of Schottky TFE source and compute usable beam current and brightness based on experimentally developed usable current criteria. Advantages of these exemplary embodiments include: (1) obtaining usable beam current and brightness of a Schottky TFE source can be important with reference to Schottky TFE development and quality inspection, and (2) optimizing Schottky TFE operation modes so as to maximize Schottky TFE usable beam current and brightness can enable operation of multi-beam electron optical tools.

荷電粒子ビーム描画装置、及び荷電粒子ビーム描画方法

【目的】少なくとも高エミッション条件と低エミッション条件との両条件の間で、成形アパーチャを照明する荷電粒子ビームの色収差の状態の違いを低減する。【構成】描画装置１００は、放出源の高さ位置とエミッション電流値との少なくとも１つによる第ｎ（ｎは１以上の整数）番目の条件での第ｎの高さ位置と、第ｎの高さ位置とは異なる、放出源の高さ位置とエミッション電流値との少なくとも１つによる第ｎ＋ｍ番目（ｍは１以上の整数）の条件での第ｎ＋ｍの高さ位置と、を条件に応じて選択的に調整可能に配置された電流制限アパーチャ部材２２０と、電流制限アパーチャ部材２２０の開口部を通過した荷電粒子ビームを屈折させる照明光学系２３２と、開口部全体を含む領域に屈折させられた荷電粒子ビームの照射を受け、荷電粒子ビームの一部が第２の開口部を通過することによって荷電粒子ビームを成形する第１の成形アパーチャ部材２０３と、を備えたことを特徴とする。【選択図】図３

ショットキー熱電界放出（ｔｆｅ）源の使用可能電流及び輝度を決定する方法、持続性コンピュータ可読媒体、及び決定システム

【課題】ショットキー熱電界放出（ＴＦＥ）源の使用可能電流及び輝度を取得可能な方法を提供する。【解決手段】本発明の一態様のショットキー熱電界放出（ＴＦＥ）源の使用可能電流及び輝度を決定する方法は、ショットキーＴＦＥ源の放出電流画像をデジタル形式で取得してメモリに記憶するステップと、前記記憶された画像のピクセルデータ値を正規化して合計するステップと、中央ビーム成分とその外側ビーム成分とからなるビーム電流と、前記正規化して合計したピクセルデータ値とに基づいてピクセル電流を割り当てるステップと、前記割り当てられたピクセル電流と使用可能電流基準とに基づいて、使用可能電流及び輝度を決定するステップとを備え、前記ピクセル電流を割り当てるステップは、各ピクセルの強度に比例する値を前記ビーム電流を正規化されたピクセル値の合計で除算した出力を割り当てることを更に含むことを特徴とする。【選択図】図８

ショットキー熱電界放出（ｔｆｅ）源の使用可能電流及び輝度を決定する方法、持続性コンピュータ可読媒体、及び決定システム

Elektronenkanone und elektronenmikroskop

Eine Elektronenkanone für ein Elektronenmikroskop oder eine ähnliche Vorrichtung umfasst eine Feldemitterkathode mit einem Feldemittervorsprung, der sich von der Ausgangsfläche eines monokristallinen Siliziumsubstrats aus erstreckt, und Elektroden, die so konfiguriert sind, dass sie die Emission von Elektronen von einem Spitzenabschnitt des Feldemittervorsprungs verstärken, um einen primären Elektronenstrahl zu erzeugen. Eine zusammenhängende TiN-Schicht ist direkt auf zumindest dem Spitzenabschnitt des Feldemittervorsprungs unter Verwendung eines Verfahrens angeordnet, das die Oxidation und Defekte in der TiN-Schicht minimiert.

Electron gun and electron microscope

電子槍及電子顯微鏡

一種用於一電子顯微鏡或類似裝置之電子槍包含具有自一單晶矽基板之輸出表面延伸之一場發射體突部之一場發射體陰極及經組態以增強來自該場發射體突部之一尖端部分之電子之發射以產生一初級電子束之電極。一連續TiN層使用最小化該TiN層中之氧化及缺陷之一程序至少直接安置於該場發射體突部之該尖端部分上。

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Spin-polarized scanning electron microscope

Provided is a spin-polarized scanning electron microscope capable of improving an SNR of a detected signal. The spin-polarized scanning electron microscope includes: a spin-polarized electron source configured to irradiate a sample with a spin-polarized electron beam that is an electron beam whose spin is deflected in a specific direction; a scanning unit configured to scan the sample by deflecting the spin-polarized electron beam; a spin detector configured to detect a spin direction of an emitted electron that is an electron emitted from the sample scanned with the spin-polarized electron beam; and a control unit configured to control the spin direction to be detected by the spin detector based on the spin direction of the spin-polarized electron beam.

スピン偏極走査電子顕微鏡

Electron gun, electron gun control method and control program, and three-dimensional sculpting device

荷電粒子銃および荷電粒子ビームシステム

引出電極における不均一な温度分布を抑制できる電子銃９０１および測長ＳＥＭ９００を提供する。電子銃９０１は、荷電粒子源１と、荷電粒子源１から荷電粒子を引き出すとともに、荷電粒子の一部を通過させ、荷電粒子の他の一部を遮蔽する引出電極３と、３引出電極に接触する補助構造５と、を備える。測長ＳＥＭ９００は、上述の電子銃９０１と、電子銃９０１を制御するコンピュータシステム９２０と、を備える。

Repeller for ion generating apparatus, ion generating apparatus and semiconductor wafer ion implantation apparatus

A repeller may be mounted inside an arc chamber of an ion implantation apparatus for doping impurities into a surface film of a semiconductor wafer. The repeller may include a body including an outer circumferential surface and a surface area enlargement portion on the body. The surface area enlargement portion may include striped grooves continuously formed on the outer circumferential surface of the body at intervals in a longitudinal direction of the body.

Electron gun, electron beam applying equipment and an electron beam emission method

电子枪、电子射线应用装置以及电子束的射出方法

本发明提供一种仅以电子枪所具有的结构部件，即能够设定为可对于照射对象的所希望的位置照射具有所希望的电子束参数的电子束的电子枪，其包括：光源；光电阴极，依据来自所述光源的受光，产生可射出的电子；阳极，可在与所述光电阴极之间形成电场，且通过所形成的电场引出所述可射出的电子，以形成电子束；以及控制部；所述控制部设定所述电子束的射出次数，且按照各射出的电子束设定电子束参数，或者，设定所述电子束的射出时间，且将射出的电子束的电子束参数与所述射出时间关联起来进行设定。

粒子束装置、操作粒子束装置的方法以及计算机程序产品

本发明涉及一种粒子束装置(1)，该粒子束装置具有粒子源(11)、提取孔阑(13)、阳极孔阑(14)和束管(23)。该粒子束装置(1)的驱动器系统被配置为向该提取孔阑(13)施加提取孔阑电势(φExt)，向该阳极孔阑(14)施加能够以可变方式设置的阳极孔阑电势(φA)，并且向该束管(23)施加束管电势(φL)。该粒子束装置(1)的控制器被配置为控制该驱动器系统，使得该提取孔阑(13)与该阳极孔阑(14)之间的电压能够以可变方式来设置，因此穿过该阳极孔阑(14)的孔径(14')的该粒子束(3)的电流强度能够以可变方式来设置。

带电粒子枪以及带电粒子束系统

本发明提供能够抑制引出电极中的不均匀的温度分布的电子枪(901)以及测长SEM(900)。电子枪(901)具备：带电粒子源(1)；引出电极(3)，其从带电粒子源(1)引出带电粒子，并且使带电粒子的一部分通过，遮蔽带电粒子的另一部分；以及辅助结构(5)，其与引出电极(3)接触。测长SEM(900)具备上述的电子枪(901)和控制电子枪(901)的计算机系统(920)。

电子枪、电子射线应用装置以及电子束的射出方法

本发明提供一种能够延长光电阴极的寿命的电子枪，其包括在第一表面形成有光电阴极膜的基板、用于将激发光照射在光电阴极膜的光源、阳极、用于加热光电阴极膜和/或基板的加热装置、以及用以调整加热装置的加热温度的输出调整装置。

Method and apparatus for usable beam current and brightness in Schottky thermal field emission (TFE)

A system for determining Schottky thermal field emission (TFE) usable current and brightness of a Schottky TFE source is provided, the system including: one or more processors, configured to: acquire and store in a memory a Schottky TFE emission image in a digital format; and determine Schottky TFE usable beam current and brightness for the based on experimentally developed algorithms that utilize usable current criteria and usable emission current density, the usable current criteria being generated based on properties of a central beam component and an outer beam component of Schottky TFE beam current.

进行了空间相位调制的电子波的发生装置

产生进行了空间相位调制的电子波。具备激光输出装置、空间光相位调制器以及光阴极。光阴极在表面具有形成有NEA膜的半导体膜，半导体膜的厚度比半导体膜中的电子的相干弛豫时间乘以半导体膜中的电子的移动速度得到的值薄。根据该结构，进行了空间相位调制的光的相位的空间分布和强度的空间分布传写到电子波，从NEA膜放出的电子波被调制成光的相位的空间分布和强度的空间分布。通过光的空间相位调制技术，能够对光的相位的空间分布如所预期地进行调制，因此能够产生对相位的空间分布如所预期地进行了调制的电子波。

带电粒子束系统和方法

公开了一种用于通过带电粒子束自动化长期加工样品的方法和带电粒子束系统。该带电粒子束系统包括带电粒子源，该带电粒子源具有发射带电粒子的尖端(20)、引出电极(22)、抑制电极(21)、用于用引出电压偏置所述引出电极的第一可变电压源、用于用抑制电压偏置该抑制电极的第二可变电压源。该系统进一步包括控制器，该控制器被配置为：通过将聚焦带电粒子束在该样品的表面上进行扫描来加工该样品，该聚焦带电粒子束具有束电流；在加工该样品时，测量该束电流和该抑制电压；在第一预定义范围内调节该抑制电压，以将该束电流保持在第二预定义范围内；如果该束电流因为该抑制电压接近该第一范围的极限而超出该第二范围，则中断该样品的加工；执行源恢复过程；以及在执行该源恢复过程后继续加工该样品。

Charged particle source

This invention provides a charged particle source, which comprises an emitter and means of generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

Charged particle source

This invention provides a charged particle source, which comprises an emitter and means of generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

전자 총 및 전자 현미경

전자 현미경 또는 유사한 디바이스를 위한 전자 총은, 단결정 실리콘 기판의 출력 표면으로부터 연장되는 전계 방출기 돌출부를 갖는 전계 방출기 캐소드, 및 1차 전자 빔을 생성하기 위해 전계 방출기 돌출부의 팁 부분으로부터의 전자의 방출을 강화시키도록 구성되는 전극을 포함한다. TiN층 내의 산화 및 결함을 최소화하는 프로세스를 사용하여 적어도 전계 방출기 돌출부의 팁 부분 상에 직접적으로 연접하는(contiguous) TiN층이 배치된다.