Ionenquelle und Plasma-Bearbeitungsvorrichtung

Ionenquelle mit: einer Plasmaerzeugungskammer; einer Trennwand aus einem dielektrischen Material, die die Plasmaerzeugungskammer abteilt; einer Hochfrequenzantenne, die außerhalb der Trennwand installiert ist und in der Plasmaerzeugungskammer ein Plasma erzeugt; und einer Struktur, die im Inneren der Plasmaerzeugungskammer installiert ist, wobei diese Struktur aus einem dielektrischen Material besteht und der Abscheidung an einer der Hochfrequenzantenne zugewandten Innenseite der Trennwand entgegenwirkt.

Arrangement for generating ions by generating a plasma esp. for coating substrates

The arrangement has a plasma source cathode (8) with a plasma generating arrangement (7). It also has an arrangement for generating a magnetic field for bundling the plasma. The arrangement has a target element (3) and a reservoir (4) for containing a material supply (5). The arrangement also has means for generating a positive electric potential on a free surface of the reservoir. The plasma generator, the magnetic field generator (10), the target element and the reservoir are arranged such that in use the plasma bundle extends from the source cathode to the target element. The free surface of the reservoir between the cathode and the target element is arranged such that the target element is not in a dominant movement direction of the evaporated non-ionized material atoms.

Apparatus

Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device

ION GUN FOR THE PRODUCTION OF IONS FROM GAS OR STEAM

Processing system with double ion guns.

Ion source

Ion source

Silicon implantation in substrates and provision of silicon precursor compositions therefor

INSULATION STRUCTURE OF HIGH VOLTAGE ELECTRODE FOR ION IMPLANTING DEVICE

INDIRECTLY HEATED CATHODE ION SOURCE

An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc hamber in proximity to the filament and the cathode. © KIPO & WIPO 2007 ...

An ion implantation system, an ion source for an ion implantation system and a method for implanting aluminum ions into a workpiece

ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Process of fabricating semiconductor with shallow doped region

A process of fabricating semiconductor device with doped region, in which semiconductor uses one selected material as substrate,comprises of the following steps: (1) with one selected material as substrate; (2) selecting one compound ion which contains dopant element with one or more than one atom and one or more than one complementary element, in which the complementary element contains one or more than one atom; the dopant element and complementary element have high solid solubility individually in substrate material; (3) implanting selected compound ion into substrate to fabricate one doped region in which atom concentration of each dopant element and complementary element in substrate is not more than their corresponding solid solubility limit.

HYDROGEN COGAS FOR CARBON IMPLANT

A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.

SUPPLY SOURCE AND METHOD FOR ENRICHED SELENIUM ION IMPLANTATION

A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the selenium ion implantation process.

Plasma processing system and method

A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on a substrate holder in the chamber. One embodiment includes two such ion sources. In this case, the power source energizes the first and second anodes and the cathodes in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.

Method and apparatus for correcting delicate wiring of IC device

The invention discloses a method and apparatus for correcting a device characterized in that an ion beam is extracted from an ion source having high luminance such as a liquid metal ion source or the like, the ion beam is then converged to a delicate spot by use of a charged particle optical system and apertures, a wiring portion formed on and outside of an active layer region of a device and connected to the device is located to the spot by observing the wiring portion through an SIM, the ion beam in neutralized by an electron shower so as to prevent the wiring portion from being charged electrically, the converged ion beam spot is radiated to the wiring portion to remove the wiring portion, and radiation of the ion beam is stopped while observing the ion beam by a second ion mass spectrometer which detects that the wiring portion is cut by the ion beam and the ion beam reaches an insulating layer.

Method and system for single ion implanation

This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of <31>P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.

LIQUID METAL ION SOURCE

An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.

METHOD AND DEVICE FOR THE SURFACE TREATMENT OF SUBSTRATES

A method for the surface treatment of a substrate surface of a substrate with the following steps: arrangement of the substrate surface in a process chamber, bombardment of the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, introduction of a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate with: a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, means to introduce a second component into the process chamber to bind the removed impurities. 19-. (canceled)10. Method for the surface treatment of a substrate surface of a substrate , the method comprising:arranging the substrate surface in a process chamber;bombarding the substrate surface with an ion beam, with an ion energy <1000 eV generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, wherein the ion beam has a first component; andintroducing a second component into the process chamber to bind the removed impurities, wherein the second component is argon and/or hydrogen and/or nitrogen.11. Method according to claim 10 , wherein the method further comprises:evacuating the process chamber before introducing the second component.12. Method according to claim 11 , wherein the process chamber is evacuated to a pressure of less than 1 bar.13. Method according to claim 10 , wherein the method further comprises:{'sup': '2', 'adjusting the ion beam such that the substrate surface is bombarded with an ion beam density between 0.001 and 5000 μA/cm.'}14. Method according to claim 10 , wherein the ion beam is configured as a broad-band ion beam.15. Method according to ...

Ion source

An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Methods and structures for rapid switching between different process gases in an inductively-coupled plasma (IPC) ion source

Vorrichtung und Verfahren zum Implementieren der Korrektur von prognostizierten systematischen Fehlern bei der positionsspezifischen Bearbeitung

Es wird ein Verfahren zum Modifizieren einer oberen Schicht eines Werkstücks unter Verwendung eines Gascluster-Ionenstrahls (GCIB) beschrieben. Das Verfahren umfasst das Erfassen von Parameterdaten, die sich auf eine obere Schicht eines Werkstücks beziehen, und das Bestimmen einer prognostizierten systematischen Fehlerreaktion für die Anwendung eines GCIB auf die obere Schicht, um ein Anfangsprofil eines gemessenen Attributs unter Verwendung der Parameterdaten zu ändern. Darüber hinaus umfasst das Verfahren das Identifizieren eines Zielprofils des gemessenen Attributs, das Lenken des GCIB zu der oberen Schicht des Werkstücks und das räumliche Modulieren einer angewandten Eigenschaft des GCIB – auf Grund, zumindest teilweise, der prognostizierten systematischen Fehlerreaktion und der Parameterdaten – als eine Funktion der Position auf der oberen Schicht des Werkstücks, um das Zielprofil des gemessenen Attributs zu erreichen.

GERÄT MIT FOKUSSIERTEM IONENSTRAHL

Bereitgestellt wird ein Gerät mit fokussiertem Ionenstrahl, welches in der Lage ist, jede einer Vielzahl von Bestrahlungspositionen eines fokussierten Ionenstrahls automatisch und exakt auf eine euzentrische Höhe einzustellen. Das Gerät mit fokussiertem Ionenstrahl (100) umfasst: eine Elektronenstrahlsäule (10); eine fokussierte Ionenstrahlsäule (20); eine Probenplattform (50) , welche um eine Neigungsachse (TA) neigbar und in einer Höhenrichtung beweglich ist; eine Koordinatenerfassungseinheit (6A), welche dafür ausgelegt ist, um, wenn eine Vielzahl von Bestrahlungspositionen (P1 bis P3), auf welche der fokussierte Ionenstrahl aufzubringen ist, auf der Probe (200) gekennzeichnet ist, Flächenkoordinaten jeder der Vielzahl von Bestrahlungspositionen zu erlangen; eine Bewegungsbetragberechnungseinheit (6B), welche dafür ausgelegt ist, um auf der Grundlage der Flächenkoordinaten einen Bewegungsbetrag zu berechnen, um welchen die Probenplattform auf eine euzentrische Höhe (Zs) zu bewegen ist ...

Ion generation device for ion implantation

In an ion generation device which includes a chamber (51) in which plasma is generated, a first opening (52) for introducing gas to be ionized by the plasma, and a second opening (53) for irradiating ions generated from the gas, the inner wall of the chamber (51) is, or is coated with, metal or metal compound (60) which is resistant to chemical etching by the ions and radicals. Suitable resistant materials are V, Nb, Ta, Cr, Ti, Zr, Hf, Ni, Pb and Pt. A barrier layer may be provided between the chamber wall and its coating. The surface of the coating may be nitrided. ...

Electron spectroscopy

Ion beam processing apparatus and method of operating ion source therefor

Ion source

Ionic source.

Ionic source.

Fluid-cooled ion source

An ion source is cooled using a cooling plate that is separate and independent of the anode. The cooling plate forms a coolant cavity through which a fluid coolant (e.g., liquid or gas) can flow to cool the anode. In such configurations, the magnet may be thermally protected by the cooling plate. A thermally conductive material in a thermal transfer interface component can enhance the cooling capacity of the cooling plate. Furthermore, the separation of the cooling plate and the anode allows the cooling plate and cooling lines to be electrically isolated from the high voltage of the anode (e.g., using a thermally conductive, electrically insulating material). Combining these structures into an anode subassembly and magnet subassembly can also facilitate assembly and maintenance of the ionsource, particularly as the anode is free of coolant lines, which can present some difficulty during maintenance.

DEVICE OF GENERATION Of a BEAM Of IONS WITH MAGNETIC FILTER.

A METHOD FOR FORMING PATTERNS BY ION IMPLANTATION

Implantation of aluminum into semiconductor substrates for production of integrated circuits in micro-electronics industry comprises use of nitrogen trifluoride for ionizing solid alumina

L'invention concerne un procédé de génération d'ions d'aluminium pour implantation dans une plaquette de semi-conducteur, consistant à utiliser du trifluorure d'azote (NF3) en tant que gaz d'ionisation d'un élément solide en alumine (Al2O3).

A METHOD FOR FORMING PATTERNS BY ION IMPLANTATION

L'invention porte notamment sur un procédé de formation de reliefs à la surface (101) d'un substrat (100), le procédé comprenant au moins les étapes suivantes: - une première implantation d'ions dans le substrat (100) selon une première direction (112) ; - une deuxième implantation d'ions dans le substrat (100) selon une deuxième direction (132) différente de la première direction (112); - au moins l'une des première et deuxième implantations est réalisée à travers au moins un masque (121, 221) présentant au moins un motif (120, 220); - une gravure de zones (106, 108, 208) du substrat (100) ayant reçu par implantation une dose supérieure ou égale à un seuil, sélectivement aux zones (107, 109) du substrat (100) n'ayant pas reçu par implantation une dose supérieure audit seuil ; les paramètres des première et deuxième implantations étant réglées de manière à ce que uniquement des zones (106, 108, 208) du substrat (100) ayant été implantées à la fois lors de la première implantation et lors ...

Phosphine co-gas for carbon implants

Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

Workpiece carrier

A workpiece carrier comprises a first plate having a first outer diameter, a first inner diameter, and a first recess extending a first distance from the first inner diameter toward the first outer diameter. The workpiece carrier further comprises a second plate having a second outer diameter, a second inner diameter, and a second recess extending a second distance from the second inner diameter toward the second outer diameter. A plurality of mating features associated with the first plate and second plate are configured to selectively fix a position of a first workpiece between the first plate and second plate within the first recess and second recess.

METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER

An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

INTEGRATED INTERMEDIATE ELECTRODE AND PRESSURE GRADIENT TYPE PLASMA GUN

An integrated intermediate electrode (G) comprises a first conductive housing (11), a first conductive sleeve (12) provided concentrically to the first housing in contact with the inner circumferential surface of the first housing, a first magnet (15) contained in the first housing concentrically thereto, a second conductive housing (17) provided coaxially with the first housing, a second conductive sleeve (18) provided concentrically to the second housing in contact with the inner circumferential surface of the second housing, and a second magnet (21) contained in the second housing concentrically thereto. The first housing and the second housing are integrated through an insulating member (16).

NEUTRAL PARTICLE BEAM PROCESSING APPARATUS WITH ENHANCED CONVERSION PERFORMANCE FROM PLASMA IONS TO NEUTRAL PARTICLES

There is provided a neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles. More specifically, there is provided a neutral particle beam processing apparatus comprising a high frequency electric power introducing part through which high frequency electric power is supplied, a plasma generating part which transforms gases from a gas injector into plasmas with the high frequency electric power, a neutral particle generating part that converts the obtained plasmas to neutral particles via collisions thereof with a heavy metal plate, and a treating part that treats the surface of a target with the neutral particle beams generated from the neutral particle generating part, wherein inclined slits or inclined holes are formed as beam penetration pathways on the heavy metal plate colliding with the plasmas.

ION SOURCE FOR GENERATING IONS OF A GAS OR VAPOUR

An ion source for generating ions of a gas or vapour, especially for thinning solid state samples, comprising a housing (28), means for introducing (31) said gas or vapour into said housing (28), an anode (3) positioned within said housing (28), said anode (3) having a rotationally symmetrical cavity (21) being open at both sides along the axis (30) of the source, first and second electrooptical mirror means (1, 2; 5, 4) disposed along said axis (30) and defining therebetween a space within which said anode (3) is positioned, said first and second electrooptical mirror means (1, 2; 5, 4) creating an electrostatic field so as to cause electrons to oscillate between them, wherein at least one of said first and second electrooptical mirror means (1, 2; 5, 4) being apertured for exit therethrough of a fraction of ions generated in said space. The ion source further comprises means for generating electrons (12) disposed at one of said sides of said cavity (21) and positioned outside said space ...

Terminal structure of an ion implanter

An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.

Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device

An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.

Extractor and deceleration lens for ion beam deposition apparatus

A pair of lenses for an ion beam deposition device permit the formation of an ion beam with good beam characteristics and the variation of ion energy over an extremely wide range and at high perveance. An ion extractor is provided with a shield with a shape closely corresponding to the extraction electrode aperture to avoid sputtering and the introduction of contaminants into the material deposition process at low beam energies at the extractor. A three electrode deceleration lens allows high current beams to be decelerated to an energy of 25 eV for deposition, under some conditions. The combination of lenses allows the ion energy in the beam to be changed at particular regions along the beam so that optimal energies for focussing, mass analysis and deposition can be obtained.

Polymer surface treatment with particle beams

A polymer surface and near surface treatment process produced by irradiation with high energy particle beams. The process is preferably implemented with pulsed ion beams. The process alters the chemical and mechanical properties of the polymer surface in a manner useful for a wide range of commercial applications.

Source bushing shielding

The source bushing assembly has a source bushing having an internal vacuum side and an external atmosphere side, a first shield of annular shape disposed at one end of the source bushing in spaced concentric relation to reduce formation of an electrically conductive coating on the source bushing, a second shield of annular shape disposed at an opposite end of the source bushing in spaced concentric relation to prevent arcing on the source bushing and an internally disposed concentric X-ray shield.

REPELLER, CATHODE, CHAMBER WALL AND SLIT MEMBER FOR ION IMPLANTER AND ION GENERATING DEVICES INCLUDING THE SAME

Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements. 1. A chamber wall mounted inside an arc chamber of an ion generating device for an ion implanter to define a space where ions are generated wherein the chamber wall covers four sides of the arc chamber and its portion corresponding to at least one of the four sides of the arc chamber has a refractory metal material as a base material forming its shape and has a coating structure comprising a semicarbide layer on at least one surface of the base material.2. The chamber wall according to claim 1 , wherein the coating structure comprising a semicarbide layer comprises a refractory metal carbide structure in which a continuous or discontinuous refractory metal monocarbide layer is layered on a continuous or discontinuous refractory metal semicarbide layer.3. The chamber wall according to claim 1 , wherein the coating structure comprising a semicarbide layer comprises a refractory metal carbide structure in which a continuous or ...

Hall-current ion source for ion beams of low and high energy for technological applications

A Hall-current ion source for generation of low and high energy ion beams with selection of magnetic fields and emission currents, where there are utilized low magnetic fields and high emission currents that are higher than discharge currents for low energy ion beams, 15-100 eV; high magnetic fields and emission currents that are equal to discharge currents are utilized for discharge voltages providing ion beam energies of 100-500 eV. Other measures are utilized for protection of a gas distribution area and a magnet from pinching by an ion beam penetration through a reflector by a buffer chamber providing better gas distribution in anode area, a protective ring in a center part of a reflector, and others.

Method and device of ion source generation

An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

EXTRACTION GRID

Eine Vorrichtung zur Extraktion von Ionen und/oder Elektronen aus einem Plasma weist ein Gitter 1 und einen Gitterhalter 2 auf, an dessen Umfang das Gitter 1 befestigt ist. Erfindungsgemäß ist das Gitter 1 als Streckmetallgitter ausgeführt. Mit der Erfindung werden ferner eine Plasmaquelle, eine Plasmabeschichtungsvorrichtung, sowie ein Verfahren zur Herstellung einer Interferenzschicht bzw. von Interferenzschichtsystemen bereitgestellt.

System und Verfahren der Substratverarbeitung sowie deren Verwendung zur Hartscheibenherstellung

Substratbearbeitungssystem mit folgenden Merkmalen: eine Bearbeitungskammer (10); ein Substrathalter (12), der in der Bearbeitungskammer (10) gelegen ist; eine Gasquelle (54), die an die Bearbeitungskammer (10) zur Zufuhr von Prozeßgas in die Bearbeitungskammer angeschlossen ist; mindestens ein erster Plasmagenerator (20) in der Bearbeitungskammer, der an eine Leistungsquelle (50) zur Ionisierung des Prozeßgases zur Erzeugung von Ionen zur Bearbeitung eines auf dem Substrathalter angeordneten Substrats (14) angeschlossen ist; mindestens ein zweiter Plasmagenerator (22) in der Bearbeitungskammer, der mit einer Leistungsquelle (50) zur Ionisierung des Prozeßgases zur Erzeugung von Ionen zur Bearbeitung eines auf dem Substrathalter angeordneten Substrats (14) verbunden ist, dadurch gekennzeichnet, dass der erste Plasmagenerator (20) auf einer ersten Seite des Substrats (14) und der zweite Plasmagenerator (22) auf einer zweiten, entgegengesetzten Seite des auf dem Substrathalter angeordneten ...

Mit einem Strahl geladener Teilchen arbeitende Vorrichtung und Probenpräparationsverfahren

Es ist eine mit einem Strahl geladener Teilchen arbeitende Vorrichtung vorgesehen, welche Folgendes umfasst: eine Quelle geladener Teilchen, eine Objektivlinse zum Fokussieren eines von der Quelle geladener Teilchen emittierten Strahls geladener Teilchen auf eine Probe, einen Detektor zum Detektieren von der Probe emittierter sekundärer geladener Teilchen, eine Sonde, die in Kontakt mit der Probe gelangen kann, eine Gasdüse zum Emittieren eines leitenden Gases zur Probe und eine Steuereinheit zum Steuern des Antriebs der Sonde und der Gasemission von der Gasdüse, wobei die Steuereinheit, bevor die Sonde in Kontakt mit der Probe gebracht wird, nachdem der Strahl geladener Teilchen auf die Probe angewendet wurde, um die Probe zu bearbeiten, Gas von der Gasdüse zu einer Bearbeitungsposition emittiert und den Strahl geladener Teilchen anwendet, um einen leitenden Film auf einem Bearbeitungsabschnitt der Probe zu bilden, und die mit einem Strahl geladener Teilchen arbeitende Vorrichtung mit ...

Verfahren und Vorrichtung zur Filmabscheidung

Electron spectroscopy apparatus comprising a polycyclic aromatic hydrocarbon ion gun

The present invention provides an electron spectroscopy apparatus 2 comprising a high energy particle source 12 for irradiating a sample 6, an electron detector system 16 for detecting electrons emitted from the sample, and an ion gun 8 for delivering a polycyclic aromatic hydrocarbon (PAH) ion beam 10 to the sample 6, wherein the ion gun 8 comprises a PAH ion source. The polycyclic aromatic hydrocarbon may comprise anthracene, pyrene, ovalene, or, more preferably, coronene or dicoronylene. In an embodiment, the PAH is located in a heated chamber (22 in Figure 2) and vaporised to produce gas phase PAH. The gas phase PAH molecules are then ionised by electron impact, extracted from the ion source via an extraction field and focussed using ion optics. The PAH ion beam 10 is preferably used for removing material from outer layers of the sample 6 when performing depth analyses, and provides improvements in terms of reduced sample damage and deposition of unwanted material.

Alignment marking for rock sample analysis

A method for using a Focused Ion Beam and/or Scanning Electron Microscope (FIB/SEM) for etching one or more alignment markers (210, 230) on a rock sample (200), the one or more alignment markers (210, 230) being etched on the rock sample (200) using the FIB/SEM. The one or more alignment markers (210, 230) may further be filled with a platinum alloy or other suitable compositions for increasing alignment marker contrast.

CATHODE MOUNTING FOR ION SOURCE WITH INDIRECTLY HEATED CATHODE

An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. ...

Ion beam generating device for treating substrate in industrial application, has magnets to generate magnetic field at opening of electrode for deviating charged particles attracted by ion source such that particles do not reach source

L'invention concerne un dispositif (2) de génération d'un faisceau d'ions (4), comprenant un support (6), une source d'ions (18), cette source d'ions comportant une extrémité inférieure (8) reliée au support (6) et une extrémité supérieure (10), à l'opposé de l'extrémité inférieure (8), et un moyen (12) d'extraction des ions émis par la source, ce moyen d'extraction (12) comprenant une paroi (14) munie d'une ouverture (16), l'ouverture (16) étant agencé à proximité de l'extrémité supérieure (10) de la source d'ions (18), afin de permettre le passage des ions extraits à travers cette ouverture. Ce dispositif (2) comprend en outre un moyen (M1, M2) de génération d'un champ magnétique (B) apte à générer un champ magnétique au niveau de l'ouverture (16) du moyen d'extraction, le champ magnétique généré (B) étant apte à dévier des particules chargées (20) attirées par la source d'ions de manière à ce que ces particules chargées n'atteignent pas la source d'ions.

원자 알루미늄 이온을 생성하기 위한 고체 요오드화 알루미늄(ALI3)을 사용하는 주입 및 요오드화 알루미늄과 관련된 부산물의 현장 세정

... 요오드화 알루미늄으로부터 이온 빔을 형성하기 위한 이온 주입 시스템 및 방법이 제공된다. 또한, 수증기 소스는 요오드화 수소산을 형성하기 위하여 잔류 요오드화 알루미늄을 반응시키기 위한 물을 도입한다.

Bulk Deposition for Tilted Mill Protection

Focused ion beam apparatus

A focused ion beam apparatus, comprising: an electron beam column configured to irradiate a sample with an electron beam; a focused ion beam column configured to irradiate the sample with a focused ion beam; a sample stage, on which the sample is to be placed in one of a direct manner and an indirect manner, and which is tiltable about a tilt axis perpendicular to the electron beam and the focused ion beam and movable in a height direction; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on the sample, plane coordinates of each of the plurality of irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height (Zs) so that the eucentric height (Zs) matches an intersection position at which the electron beam and the focused ion beam match each other at ...

ION BEAM GENERATING APPARATUS, AND ION BEAM PLASMA PROCESSING APPARATUS

Provided are: an ion beam generating apparatus, which is provided with a movable member (for instance, a plug (205)), and is capable of reducing formation of a film attached to a side wall (205b) of the member, even if an electrode of a grid assembly (203) is sputtered; and an ion beam plasma processing apparatus. An ion beam generating apparatus of one embodiment of the present invention is provided with: the grid assembly (203), which is provided to face an upper wall (201); the plug (205) that can move in the first direction directed toward the grid assembly (203) from the upper wall (201), and in the second direction directed toward the upper wall (201) from the grid assembly (203); and a shield (201C), which shields a side wall (205b) of the plug.

AN ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF IONS DERIVED FROM CARBORANE CLUSTER IONS

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized carborane cluster ions are implanted into semiconductor substrates to perform doping. of the substrate. The carborane cluster ions have the chemical form C2B10Hx+, C2B8Hx+ and C4B18Hx+ and are formed from carborane cluster molecules of the form C2B10H12,C2B8H10 and C4B18H22 The use of such carborane molecular clusters results in higher doping concentrations at lower implant energy to provide high dose low energy implants. In accordance with one aspect of the invention, the carborane cluster molecules may be ionized by direct electron impact ionization or by way of a plasma.

AN ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF IONS DERIVED FROM CARBORANE CLUSTER IONS

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized carborane cluster ions are implanted into semiconductor substrates to perform doping. of the substrate. The carborane cluster ions have the chemical form C2B10Hx +, C2B8Hx + and C4B18Hx + and are formed from carborane cluster molecules of the form C2B10H12,C2B8H10and C4B18H22 The use of such carborane molecular clusters results in higher doping concentrations at lower implant energy to provide high dose low energy implants. In accordance with one aspect of the invention, the carborane cluster molecules may be ionized by direct electron impact ionization or by way of a plasma.

METHOD OF IONIZATION

A plasma (106) is formed from one or more gases in a plasma chamber (102) using at least power (203) and a second power (204). A first ion species (107) is generated at said first power and. a second ion species (108) is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece (105) at two different energies using a least a first bias voltage (205) and a second bias voltage (206). This may enable implantation to two different depths. These ion species may be atomic o molecular, ions. The molecular ions may be larger than the gases used to form the plasma.

INDIRECTLY HEATED CATHODE ION SOURCE

An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc hamber in proximity to the filament and the cathode.

Method and apparatus for altering material

Methods and apparatus for thermally altering the near surface characteristics of a material are described. In particular, a repetitively pulsed ion beam system comprising a high energy pulsed power source and an ion beam generator are described which are capable of producing single species high voltage ion beams (0.25-2.5 MeV) at 1-1000 kW average power and over extended operating cycles (108). Irradiating materials with such high energy, repetitively pulsed ion beams can yield surface treatments including localized high temperature anneals to melting, both followed by rapid thermal quenching to ambient temperatures to achieve both novel and heretofore commercially unachievable physical characteristics in a near surface layer of material.

Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device

An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.

Method and system for single ion implantation

This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of ³¹P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.

Hydrogen COGas for carbon implant

A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.

ION BEAM ETCHING METHOD AND ION BEAM ETCHING APPARATUS

To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source. 1. An ion beam etching method performed in an ion beam etching apparatus including an ion source that emits an ion beam to a substrate , a substrate holder that holds the substrate and changes a tilt angle of the substrate with respect to the ion source , and a shutter that has an opening portion through which the ion beam passes and is capable of changing a position of the opening portion with respect to the substrate , the ion beam etching method comprising:holding the substrate so that the tilt angle with respect to the substrate becomes smaller as a distance is increased between the ion source and a center of a site where the ion beam passed through the opening portion is incident on the substrate; andetching the substrate with the ion beam passing through the opening portion.2. The ion beam etching method according to claim 1 , wherein an etching time is changed as the distance between the ion source and the center of the site is increased.3. An ion beam etching apparatus claim 1 , comprising:an ion source that emits an ion beam to a substrate;a substrate holder that holds the substrate and changes a tilt angle of the substrate with respect to the ion source;a shutter that has an opening portion through which the ion beam passes and is capable of changing a position of the opening portion with respect to the substrate; anda tilt angle control unit that controls the tilt angle so that it becomes smaller with respect to the substrate as a distance is increased between the ion source ...

APPARATUS FOR ACCELERATING AN ION BEAM

Laserionenquelle

Laserionenquelle (100), dadurch gekennzeichnet, dass sie umfasst:ein zu evakuierendes Gehäuse (110);eine im Gehäuse (110) angeordnete und ein Ziel (121), das Ionen durch Bestrahlung mit Laserlicht (131) erzeugt, umfassende Bestrahlungsbox (120);einen Ionenstrahl-Extraktionsmechanismus (112), der Ionen aus der Bestrahlungsbox (120) elektrostatisch extrahiert und die Ionen außerhalb des Gehäuses (110) als einen Ionenstrahl (133) führt;ein an einem Ionenstrahlauslass (116) des Gehäuses (110) vorgesehenes Ventil (140), wobei das Ventil (140) während eines Betriebs der Laserionenquelle (100) geöffnet ist und zu anderen Zeiten geschlossen ist; undeinen Verschluss (150), der zwischen dem Ventil (140) und der Bestrahlungsbox (120) vorgesehen ist, wobei der Verschluss zeitlich synchronisiert zur Laserbestrahlung geöffnet und geschlossen ist.

GERÄT MIT FOKUSSIERTEM IONENSTRAHL

Bereitgestellt wird ein Gerät mit fokussiertem Ionenstrahl, welches vor der tatsächlichen Bestrahlung mit einem fokussierten Ionenstrahl zu erfassen in der Lage ist, in welcher Richtung ein Strahl den Probentisch, auf welchem mindestens eine Probe befestigt ist, erreicht. Ein Gerät mit fokussiertem Ionenstrahl (100) umfasst: eine fokussierte Ionenstrahlsäule (20), welche dafür ausgelegt ist, um eine Probe (200) mit einem fokussierten Ionenstrahl (20A) zu bestrahlen; einen Probentisch (51), auf welchem die Probe zu platzieren ist; eine Probenplattform (50), auf welcher der Probentisch zu platzieren ist und welche zumindest in einer horizontalen Richtung und einer Höhenrichtung beweglich ist; einen Speicher (6M), welcher dafür ausgelegt ist, um im Voraus dreidimensionale Daten an dem Probentisch und eine Bestrahlungsachse des fokussierten Ionenstrahls zu speichern, wobei die dreidimensionalen Daten mit Plattformkoordinaten der Probenplattform verknüpft sind; eine Anzeige (7); und eine Anzeigesteuerung ...

Ion beam etching method and ion beam etching apparatus

SOURCE FOR CHARGED PARTICLES WITH INTEGRATED ENERGY FILTER

Methods and apparatus for altering material using ion beams

PHOSPHINE CO-GAS FOR CARBON IMPLANTS

The structure of the high-pressure chamber of the high-voltage accelerator

이온 빔 에칭 방법 및 이온 빔 에칭 장치

... 장치의 대형화를 수반하지 않고, 저입사각 정지 조건에서도 고균일한 IBE 처리를 실현할 수 있는 이온 빔 에칭 방법을 제공한다. 이온 빔 에칭 방법은, 기판에 대한 개구부의 위치를 변경하는 스텝과, 개구부를 통과한 이온 빔으로 기판을 에칭하는 스텝과, 이온 빔이 기판에 입사되는 위치의 중심이 이온원으로부터 멀어짐에 따라서, 경사 각도를 작게 하는 스텝을 갖는다.

이온 빔 제어를 위한 듀얼 스테이지 스캐너

... 이온 빔 스캐너는 이온 빔을 투과시키는 제 1 개구를 갖는 제 1 스캐너 스테이지로서, 상기 제 1 스캐너 스테이지는 제 1 진동 편향 신호에 응답하여, 상기 제 1 개구 내에 제 1 진동 편향 필드를 생성하고; 상기 이온 빔을 투과시키는 제 2 개구를 갖고 상기 제 1 스캐너 스테이지의 다운스트림에 배치된 제 2 스캐너 스테이지로서, 상기 제 2 스캐너 스테이지는 제 2 진동 편향 신호에 응답하여, 상기 제 2 개구 내에 상기 제 1 진동 편향 필드에 반대 방향으로 제 2 진동 편향 필드를 생성하고; 및 상기 스캔되는 이온 빔이 상기 제 2 스테이지를 빠져 나갈 때 공통 초점을 정의하는 복수개의 이온 궤적들을 생성하기 위해 상기 제 1 진동 편향 신호 및 제 2 진동 편향 신호를 동기화하는 스캔 제어기를 포함한다.

VAPOR DELIVERY SYSTEM USEFUL WITH ION SOURCES AND VAPORIZERS FOR USE IN SUCH SYSTEM

Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems.

TRANSMISSION ION MISCROSCOPE

Transmission ion microscope. A bright light ion source generates an ion beam that is focused on a sample by an electrostatic condenser lens. An objective lens focuses the ion beam transmitted through the sample to forth an image. A projector lens enlarges the image and a phosphor screen receives the enlarged image to generate light allowing visualization of the image.

ION SOURCE AND PLASMA PROCESSING DEVICE

To enable long-life, stable plasma formation. A ion source in which a high-frequency antenna (16) is installed on the outer peripheral side of a partition wall (15) consisting a dielectric and partitioning a plasma producing chamber (14), and a shield body (26) consisting of a dielectric and preventing the deposition of a film on the inner peripheral surface of the partition wall (15) facing the high-frequency antenna (16) is provided inside the plasma producing chamber (14). The structure consisting of a dielectric can prevent an increase in high-frequency power required for inductive coupling with plasma. The shied body (26) is formed with a slot (26a) in a direction crossing the winding direction of the high-frequency antenna (16). Since this arrangement can prevent the continuous depositing of a film on the inner surface of the partition wall in the winding direction of the high-frequency antenna, an induction loss between the high-frequency antenna and the plasma producing chamber ...

METHOD AND SYSTEM FOR SINGLE ION IMPLANTATION

A method and system for single ion doping and machining detects the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of31P ions into a semi-conductor substrate for construction of a Kane quantum computer. The method and system particularly relate to the application of a potential (24) across two electrodes (22, 23) on the surface of the substrate (20) to create a field to separate and sweep out electron-hole pairs formed within the substrate (20). A detector (30) is then used to detect transient current in the electrodes, and so determine the arrival of a single ion in the substrate (20).

Thermal Transfer Sheet for Ion Source

One or more thermal transfer sheets are easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal transfer sheets, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The thermal transfer sheets may be interposed between the consumable components within the anode assembly. The thermal transfer sheets may be thermally conductive and either electrically insulating or conductive.

Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Differential Imaging with Pattern Recognition for Process Automation of Cross Sectioning Applications

A method for using differential imaging for applications involving TEM samples by allowing operators to take multiple images during a procedure involving a focused ion beam procedure and overlaying the multiple images to create a differential image that clearly shows the differences between milling steps. The methods also involve generating real-time images of the area being milled and using the overlays of the differential images to show small changes in each image, and thus highlight the ion beam milling location. The methods also involve automating the process of creating differential images and using them to automatically mill subsequent slices.

ALIGNMENT MARKING FOR ROCK SAMPLE ANALYSIS

A method for using a Focused Ion Beam and/or Scanning Electron Microscope (FIB/SEM) for etching one or more alignment markers (210, 230) on a rock sample (200), the one or more alignment markers (210, 230) being etched on the rock sample (200) using the FIB/SEM. The one or more alignment markers (210, 230) may further be filled with a platinum alloy or other suitable compositions for increasing alignment marker contrast.

Method of implanting high energy implanter from a low or medium current and corresponding devices.

기질의 표면 처리를 위한 방법 및 장치

... 본 발명은, 기질(7)의 기질 표면(7o)을 표면 처리하기 위한 방법에 관한 것이며, 상기 방법은 상기 기질 표면(7o)을 공정 챔버(8)내에 배열하는 단계, 상기 기질 표면(7o)으로부터 불순물을 제거하기 위해 이온 빔 공급원(2,2',2")에 의해 발생되고 상기 기질 표면(7o)을 향하며 제1 성분을 가지는 이온 빔(3,3',3")으로 상기 기질 표면(7o)을 충돌시키는 단계, 제거된 불순물을 결합하기 위해 제2 성분을 상기 공정 챔버(8)속으로 도입하는 단계를 포함하는 것을 특징으로 한다. 또한, 본 발명은 기질(7)의 기질 표면(7o)을 표면 처리하기 위한 장치에 관한 것으로서, 상기 장치는 기질(7)을 수용하기 위한 공정 챔버(8)를 포함하고, 상기 기질 표면(7o)으로부터 불순물을 제거하기 위해 상기 기질 표면(7o)을 향하며 제1성분을 가지는 이온 빔(3,3',3")을 발생시키기 위한 이온 빔 공급원(2,2',2")을 포함하며, 제거된 불순물을 결합하기 위해 제2성분을 상기 공정 챔버(8)속으로 도입하는 수단을 포함하는 것을 특징으로 한다.

VAPORIZER

A vaporizer unit, that heats solid feed material, especially material comprising cluster molecules for semiconductor manufacture, to a temperature that produces vapor to be ionized, has efficient construction and numerous effective safety features. The heater is located in a detachable top closure member, and serves to maintain a valve in the top closure member at temperature higher than the temperature to which the solid material is heated. The top section is a heat distributor to an interface with the bottom section, the side and bottom walls of the bottom distributing heat received from the interface to surfaces of the cavity exposed to the feed material. Locking, access-preventing and effective use of mechanical and electronic coding provide safety. Borane, decarborane, carbon clusters and other large molecules are vaporized for ion implantation. Such vaporizers cooperating with novel vapor delivery systems and with ion sources are shown.

TERMINAL STRUCTURE OF AN ION IMPLANTER

An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.

PULSED ION BEAM SOURCE

An improved magnetically-confined anode plasma pulsed ion beam source (25). Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure (408) and the slow field structure (414) near the anode (410) of the ion beam source, by a gas port design (404, 406) which localizes the gas delivery into the gap between the fast coil (408) and the anode (410), by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means (180) which optimally adjusts the plasma formation position in the ion beam source.

Curing of a tungsten filament in an ion implanter

Within an ion implanter, a source element or filament may be cured outside of the ion implanter. This may be accomplished within a vacuum chamber using the same source assembly or canister to hold the filament as is used within the ion implanter. The filament within the source canister is inserted into the vacuum chamber and a vacuum is produced at a first set point. Then, the current is gradually increased while monitoring the pressure compared to a second set point. The current is decreased where the second pressure set point is reached to prevent oxidation. Where the chamber pressure is below the second set point, the current is allowed to increase. The curing of the filament is indicated when the filament increases to the third set point, without chamber pressure exceeding the second set point.

Thermal Transfer Sheet for Ion Source

One or more thermal transfer sheets are easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal transfer sheets, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The thermal transfer sheets may be interposed between the consumable components within the anode assembly. The thermal transfer sheets may be thermally conductive and either electrically insulating or conductive.

Ion Milling Device

The present invention aims at providing an ion milling apparatus for emitting an ion beam to a sample to process the sample and capable of controlling the temperature of the sample with high accuracy regardless of deformation or the like of the sample being irradiated with the ion beam, and proposes an ion milling apparatus including at least one of a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam, for example. 1. An ion milling apparatus including a sample stand for supporting a sample to be irradiated with an ion beam , the ion milling apparatus comprising at least one of:a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam.2. The ion milling apparatus according to claim 1 , wherein the shifting mechanism includes a pressing member for pressing the sample toward the shield.3. The ion milling ...

Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process

Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.

High-Vacuum Variable Aperture Mechanism And Method Of Using Same

A novel technique is disclosed for varying a size of an aperture within a vacuum chamber. A drive mechanism within the vacuum chamber is used to adjust a partial horizontal overlap between at least two blades, wherein a perimeter of the aperture opening is defined by edges of said blades. In one embodiment, a variable aperture mechanism includes first and second blades attached to a first support, and third and fourth blades attached to a second support. The first blade is spaced vertically above the second blade on the first support; a second support, and the fourth blade is spaced vertically above the third blade on the second support. There is a partial horizontal overlap between the first and third blades and between the fourth and second blades, and the aperture opening has a perimeter defined by edges of the four blades. Other embodiments are also disclosed.

Encapsulation of Electrodes in Solid Media for use in conjunction with Fluid High Voltage Isolation

An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.

Drug delivery system and method of manufacturing thereof

In one embodiment, a drug delivery system and method provide a member including a combination of a drug substance and a polymer or other material, and an encapsulating layer formed in an outer surface of the member by gas cluster ion beam irradiation of the outer surface of the member, which encapsulating layer is adapted to determine one or more characteristics of the drug delivery system.

Surface profile adjustment using gas cluster ion beam processing

A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.

Particle sources and methods for manufacturing the same

The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

Fabrication of super ion - electron source and nanoprobe by local electron bombardment

Method of fabricating super nano ion-electron source including: placing an assembly of precursor tip and metal ring around the precursor tip below the apex in a FIM chamber; applying dc current from grounded source to the metal ring to heat the ring; gradually applying high voltage to the precursor tip; wherein the metal ring is exposed to a high electric field from the tip, generating Schottky field emission of electrons from the metal ring, the applied electrical field sufficient to cause electrons to be extracted from the metal ring and accelerated to the shank with energy sufficient to dislodge atoms from the shank; and monitoring the evolution of the tip apex due to movement of dislodged atoms from the shank to the apex while adjusting the electrical field, the current or temperature of the metal ring until the apex forms a sharp nanotip with an atomic scale apex.

Target for generating carbon ions and treatment apparatus using the same

Provided are a carbon ion generation target and a treatment apparatus including the same. The treatment apparatus includes a support member, a carbon ion generation target fixed to the support member, and a laser for irradiating laser beam into the carbon ion generation target to generate carbon ions from the carbon ion generation target, thereby projecting the carbon ions onto a tumor portion of a patient. Here, the carbon ion generation target includes a substrate and carbon thin films disposed on the substrate.

Liquid metal ion source and secondary ion mass spectrometric method and use thereof

A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

Three Dimensional Metal Deposition Technique

A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.

Ion generation method and ion source

An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.

Cluster beam generating apparatus, substrate processing apparatus, cluster beam generating method, and substrate processing method

A cluster beam generating method that generates a cluster beam includes steps of mixing a gas source material and a liquid source material in a mixer; supplying a cluster beam including clusters originating from the gas source material and clusters originating from the liquid source material that are mixed in the mixer from a nozzle; and adjusting a temperature of the nozzle using a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.

SINGLE BEAM PLASMA SOURCE

A single beam plasma or ion source apparatus, including multiple and different power sources, is provided. An aspect of the present apparatus and method employs simultaneous excitation of an ion source by DC and AC, or DC and RF power supplies. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape. 1. An ion source apparatus comprising:(a) an anode comprising at least one magnetic conductor and an open plasma area being located within a hollow central area of the anode;(b) a cathode comprising a cap having an outlet opening therethough;(c) a direct current power source connected to the anode;(d) an alternating current or radio frequency power source connected to the anode; and(e) ionization operably occurring within the plasma area inside the anode at least partially due to excitation by the direct and alternating current power sources.2. The apparatus of claim 1 , wherein the at least one magnetic conductor comprises multiple magnets or magnetic shunts which create a magnetic flux with a central dip in an open space wherein the plasma is created.3. The apparatus of claim 2 , wherein the magnets or magnetic shunts are arranged in a substantially E cross-sectional shape claim 2 , and with a body or the cap of the cathode being a magnetic metal.4. The apparatus of claim 1 , wherein:the cap of the cathode is magnetic and removable;the cap is isolated from a body of the anode which surrounds the at least one magnetic conductor of the anode; andan ion source discharge voltage is between 1-10 volts.5. The apparatus of claim 1 , further comprising:a sputtering source acted upon by ions emitted through the outlet opening; anda vacuum chamber within which is located the anode and the cathode, the chamber having an operating pressure of 1 mTorr to 500 mTorr.6. The apparatus of claim 1 , further comprising ions emitted through the outlet opening performing cleaning or evaporation deposition of thin ...

GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement

A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam. 1. A method of generating an argon ion beam , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; andextracting argon ions from the ion source to form the argon ion beam, wherein a flow rate of germane is between 0.35 and 1.00 sccm.2. The method of claim 1 , wherein the ion source comprises an indirectly heated cathode ion source.3. The method of claim 1 , wherein the ion source comprises an RF ion source.4. The method of claim 1 , wherein the ion source comprises a Bernas source claim 1 , a capacitively coupled plasma source claim 1 , an inductively coupled source claim 1 , or a microwave coupled plasma source.5. The method of claim 1 , wherein no halogen gasses are introduced into the ion source.6. The method of claim 1 , wherein the ion source is a component of a beam-line implantation system.7. A method of generating an argon ion beam claim 1 , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; and extracting argon ions from the ion source to form the argon ion beam,wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 10% relative to an argon ion beam generated without use of germane at a same extraction current.8. The method of claim 7 , wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 15% relative to the argon ion beam generated without use of germane at a same extraction current.9. The method of claim 7 , wherein no halogen gasses ...

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip. 1. A gas field ion source , comprising:a gun housing,an electrically conductive gun can base attached to the gun housing,an inner tube mounted to the gun can base, the inner tube comprising an electrically isolating material,an electrically conductive tip attached to the inner tube,an outer tube mounted to the gun can base, the outer tube comprising an electrically isolating material, andan extractor electrode attached to the outer tube, the extractor electrode having an opening for the passage of ions generated in proximity to the electrically conductive tip.2. The gas field ion source of claim 1 , further comprising a gas supply comprising a terminating tube attached to the gun can base.3. The gas field ion source of claim 2 , wherein the gas supply is configured to supply a first gas in a first mode of operation of the gas field ion source claim 2 , the gas supply is configured to supply a second gas in a second mode of operation claim 2 , and the first gas is different from the second gas.4. The gas field ion source of claim 2 , further comprising a vacuum pump operatively connected to the outer housing claim 2 , wherein the vacuum pump is configured to evacuate gas out of the outer housing.5. The gas field ion source of claim 1 , further comprising a thermal conductor connected to gun can base claim 1 , wherein the thermal conductor is thermally connected to a cooling ...

GAS COOLED PLASMA SPRAYING DEVICE

A plasma spraying device may include a first electrode and a second electrode. The first electrode may define an ionizing gas channel and at least one cooling channel. A distal end of the at least one cooling gas channel opens to an exterior of the plasma spraying spray gun proximate to a distal end of the first electrode. The second electrode is at least partially disposed in the ionizing gas channel. 1. A plasma spraying device comprising: an ionizing gas channel; and', 'at least one cooling gas channel, wherein a distal end of the at least one cooling gas channel opens to an exterior of the plasma spraying device proximate to a distal end of the first electrode; and, 'a first electrode defininga second electrode disposed in the ionizing gas channel.2. The plasma spraying device of claim 1 , wherein the first electrode comprises copper.3. The plasma spraying device of claim 1 , wherein the ionizing gas channel exits the first electrode at an ionizing gas channel exit portion claim 1 , wherein the ionizing gas channel exit portion defines an ionizing gas channel exit portion axis claim 1 , wherein the first electrode defines a major axis claim 1 , and wherein an angle between the ionizing gas channel exit portion axis and the major axis is between about 20 degrees and about 90 degrees.4. The plasma spraying device of claim 1 , wherein the at least one cooling gas channel comprises a plurality of cooling gas channels claim 1 , and wherein each of the plurality of cooling gas channels includes a distal end open to an exterior of the plasma spraying device.5. The plasma spraying device of claim 1 , wherein the at least one cooling gas channel defines a cooling gas channel axis claim 1 , and wherein the cooling gas channel axis is substantially parallel to the major axis.6. The plasma spraying device of claim 1 , further comprising a material injection channel coupled to an external surface of the device.7. The plasma spraying device of claim 1 , wherein the ionizing ...

ION BEAM SYSTEM

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation. 1. An ion beam system comprising: a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder ,wherein the cold transfer member has its surface covered with a heat insulating material in order to prevent condensation of the gas.2. The ion beam system according to claim 1 ,wherein the cold transfer member is a metal thin film or a braided metal wire and has a heat insulating layer adhered to the surface thereof.3. The ion beam system according to claim 1 ,wherein the cold transfer member comprises a metal and the heat insulating material comprises a fluorine resin or ceramics.4. The ion beam system according to claim 1 ,wherein the gas is a gas containing any one of neon, argon, krypton and xenon.5. The ion beam system according to claim 1 ,wherein the gas is a gas containing any one of carbon monoxide, oxygen and nitrogen.6. The ion beam system according to claim 1 ,wherein the gas supply portion supplies a gas mixture of krypton ...

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge. 1. An apparatus for separating ions having different mass or charge , comprising:a waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of openings;one or more pipes having an outlet end positioned at each of the plurality of openings for transporting material from a material source to the plurality of openings;a plasma chamber in communication with the waveguide tube through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide tube and material from the one or more pipes, said plasma chamber including a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber, said plasma ...

Dynamic Electron Impact Ion Source

An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field. 1. A system comprising: a first input port;', 'a second input port different from the first input port;', 'an exit port;', 'a magnetic field generator configured to generate a magnetic field within the ion source chamber;', 'a first electric field generator configured to generate a first electric field within the ion source chamber;', 'a second electric field generator configured to generate a second electric field within the ion source chamber;, 'an ion source chamber comprising receive gas-phase neutral species through the first input port;', 'receive a flow of electrons through the second input port;', 'guide the electrons through the ion source chamber using the magnetic field generator;', 'generate ions in an ionization region within the ion source chamber through an interaction between the gas-phase neutral species and the electrons; and', 'focus and accelerate at least some of the ions from the ion source chamber through the exit port along an ion beam axis using the first electric field generator;', 'wherein the second electric field generator is configured to reduce or eliminate an influence of the magnetic field on at least some of the ions accelerated from the ion source., 'wherein the ion source chamber is configured, ...

Ion generator and ion implanter

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

Ion Beam Sample Preparation and Coating Apparatus and Methods

Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder.

Method and apparatus for directing a neutral beam

The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.

Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions

An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

COMPOSITE CHARGED PARTICLE BEAM DEVICE

This composite charged particle beam device comprises a first charged particle beam column (), a second charged particle beam column () which is equipped with a deceleration system, and is equipped with a detector () inside the column, a test piece stage () on which a test piece () is placed, and an electric field correction electrode () which is provided around the tip of the first charged particle beam column, wherein the electric field correction electrode is an electrode that corrects the electric field distribution formed in the vicinity of the test piece, and the electric field correction electrode is positioned between the test piece and the first charged particle beam column, and on the opposite side from the second charged particle beam column with respect to the optical axis of the first charged particle beam column. 1. A composite charged particle beam device comprising:a sample table on which a sample is placed;an ion beam column;an electron beam column including a deceleration optical system and a detector in a column; andan electric field correction electrode provided around an end portion of the ion beam column, and that corrects an electric field distribution formed around the sample,wherein the electric field correction electrode is located between the sample and the ion beam column and at an opposite side of the electron beam column with respect to an optical axis of the ion beam column.2. The composite charged particle beam device according to claim 1 , further comprising an end electrode around the end portion of the electron beam column.3. The composite charged particle beam device according to claim 2 , wherein the end electrode has an axisymmetric shape with respect to the optical axis of the electron beam column.4. The composite charged particle beam device according to claim 1 , further comprising a control unit that controls a voltage applied to the electric field correction electrode claim 1 ,wherein the control unit controls a voltage ...

Methods and systems for plasma deposition and treatment

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

Deposition Tool for Combinatorial Thin Film Material Libraries

A system for combinatorial deposition of a thin layer on a substrate is described. The system comprises at least one deposition material source holder and a substrate holder. The system also comprises a rotatable positioning system for subsequently positioning the at least one substrate in parallel and in non-parallel configuration with at least one deposition material source. The system comprises at least one mask holder arranged for positioning a mask between at least one of the target holder and the positioning system, for allowing variation of the material flux across the at least one substrate when the combinatorial deposition is performed. The mask holder is in a fixed arrangement with respect to the at least one deposition material source holder during the combinatorial depositing. 116-. (canceled)17. A system for combinatorial depositing of a thin film having a varying composition and/or a varying thickness on at least one substrate , the system comprisingat least one deposition material source holder arranged so as to carry a deposition material source,a substrate holder adapted for carrying at least one substrate,a rotatable positioning system having a rotation axis for relatively moving the substrate holder and the at least one deposition material source holder with respect to each other for subsequently positioning the at least one substrate in a parallel configuration in front of at least one of the at least one deposition material source and in a non-parallel configuration non parallel with the at least one of the at least one deposition material source during the combinatorial deposition, andat least one mask holder arranged for positioning a mask between at least one of the at least one deposition material source holder and the substrate holder, for allowing variation of the material flux across the at least one substrate when the combinatorial deposition is performed, and the at least one mask holder being in a fixed arrangement with respect to the ...

METHOD FOR OPERATING A PLURALITY OF FIB-SEM SYSTEMS

Processes may be performed with a plurality of FIB-SEM systems. A first process group includes recording an image with the electron beam column, depositing material with supply of a process gas, and performing ion beam etching. A second process group includes performing a sample exchange, exchanging a reservoir of a gas source for the process gas, and verifying an image that was recorded with the electron beam column. The processes of the second group are prioritized. The FIB-SEM systems are actuated to work through processes contained in process lists. If in a plurality of FIB-SEM systems processes of the second group are to be performed simultaneously, an instruction based on the prioritization is output to the user. 1. A method for operating a plurality of FIB-SEM systems , wherein each of the FIB-SEM systems comprises an electron beam column for directing an electron beam onto a work region and an ion beam column for directing an ion beam onto the work region;wherein each of the FIB-SEM systems is configured such that they can be used to perform at least a plurality of predefined processes, wherein the plurality of predefined processes comprises at least one first group of processes that the FIB-SEM system can perform automatically without the assistance of the user and comprises a second group of processes that the FIB-SEM system must perform with the assistance of the user,wherein the first group of processes comprises at leastrecording an image with the electron beam column,depositing material with supply of a process gas, andperforming ion beam etching, performing a sample exchange,', 'exchanging a reservoir of a gas source for the process gas, and', 'verifying an image that was recorded with the electron beam column,, 'and the second group of processes comprises at least'}wherein the method comprises:prioritizing the processes of the second group;maintaining a process list for each of the FIB-SEM systems, wherein each process list contains a plurality of ...

METHODS, SYSTEMS AND APPARATUS FOR ACCELERATING LARGE PARTICLE BEAM CURRENTS

Systems and methods for accelerating large particle beam currents in an electrostatic particle accelerator are provided. A system may include a process ion source that is configured to emit ions, a particle accelerator and a target. The particle accelerator may include multiple conductive electrodes that are serially arranged to define a particle path between the process ion source and the target and multiple accelerator tubes arranged to further define the particle path between the process ion source, ones of the conductive electrodes and the target. 1. A system comprising:a process ion source that is configured to emit ions;a particle accelerator; anda target, a conductive electrode that includes an interior space and that is configured to be charged to a high-voltage electrical potential;', 'a first charging device that is configured to deliver a charging current to the conductive electrode to charge the conductive electrode to a given polarity and a given magnitude;', 'a second charging device that is configured to generate a voltage stabilizing current to the conductive electrode that corresponds to an ion current of the process ion source that is within the interior space of the conductive electrode; and', 'an accelerator tube positioned between the process ion source and the target and that includes a particle receiving end that is galvanically coupled to the conductive electrode and a particle exit end that is opposite the particle receiving end and that is galvanically coupled to a negative ion or electron source, and, 'wherein the particle accelerator compriseswherein the particle accelerator accelerates the ions emitted from the process ion source to produce accelerated ions that bombard the target.2. The system according to claim 1 , wherein the conductive electrode comprises a hollow metal shell claim 1 , andwherein the negative ion or electron source comprises an earth ground.3. The system according to claim 1 , wherein the accelerator tube comprises ...

Boron-Containing Dopant Compositions, Systems and Methods of Use Thereof For Improving Ion Beam Current and Performance During Boron Ion Implantation

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials. 1. A boron-containing dopant composition for use in an ion implantation process , comprising:diborane (B2H6) from 0.1%-10%;hydrogen (H2) ranging from about 5%-15%; and{'sub': '3', 'the balance being isotopically enriched boron trifluoride in boron mass isotope 11 (11BF);'}wherein said composition is characterized by no greater than 10,000 ppm of higher order boranes.2. The boron-containing dopant composition for use in an ion implantation process of claim 1 , wherein the B2H6 and H2 are supplied as a mixture in a first supply source claim 1 , and the 11BF3 is supplied in a second supply source.3. The boron-containing dopant composition for use in an ion implantation process of claim 1 , wherein the B2H6 and 11BF3 are supplied as a mixture in a first supply source claim 1 , and the 11BF3 is supplied in a second supply source.4. The boron-containing dopant composition for use in an ion implantation process of claim 1 , wherein the B2H6 claim 1 , H2 and 11BF3 is supplied as a mixture in a single supply source.5. The boron-containing dopant composition for use in an ion implantation process of claim 1 , wherein said B2H6 is isotopically enriched above natural abundance ...

ELECTROMAGNETIC WAVE SHIELDING THIN FILM, ELECTRONIC DEVICE PROVIDED WITH ELECTROMAGNETIC WAVE SHIELDING THIN FILM AND SHIELDING STRUCTURE, AND METHOD FOR MANUFACTURING ELECTROMAGNETIC WAVE SHIELDING THIN FILM

An electromagnetic wave shielding thin film for shielding from electromagnetic waves generated in an electronic part is provided. The electromagnetic wave shielding thin film includes metal plate which has elastic limit of 1% or more, strength of 1000 MPa or more, and a volume fraction of an amorphous phase of 50% or more. 1. An electromagnetic wave shielding thin film to shield against electromagnetic waves generated by an electronic part , the electromagnetic wave shielding thin film comprising:a metal plate having an elastic limit of 1% or more, a strength of 1000 MPa or more, and an amorphous phase present in the metal plate at a volume fraction of 50% or more.2. The electromagnetic wave shielding thin film of claim 1 , wherein the metal plate comprises at least one metallic element selected from Ni claim 1 , Hf claim 1 , Cu claim 1 , Zr claim 1 , Co claim 1 , Fe claim 1 , Al claim 1 , and Ti.3. The electromagnetic wave shielding thin film of claim 1 , wherein the metal plate has a thickness in a range of 30 nm-140 nm.4. The electromagnetic wave shielding thin film of claim 1 , further comprising an insulation film disposed on a surface of the metal plate.5. The electromagnetic wave shielding thin film of claim 4 , wherein the insulation film is a polyimide film.6. The electromagnetic wave shielding thin film of claim 4 , wherein the insulation film is attached to the metal plate by hot press forming.7. The electromagnetic wave shielding thin film of claim 4 , wherein the metal plate has been formed on the insulation film by sputtering a crystalline alloy target.8. The electromagnetic wave shielding thin film of claim 7 , wherein the crystalline alloy target has a crystal grain size in a range of 10 nm-5 μm.9. The electromagnetic wave shielding thin film of claim 1 , wherein the metal plate has been formed by melt-spinning a melted alloy having glass forming ability.10. The electromagnetic wave shielding thin film of claim 9 , wherein the alloy having the glass ...

PLANARIZATION, DENSIFICATION, AND EXFOLIATION OF POROUS MATERIALS BY HIGH-ENERGY ION BEAMS

A method and system for providing at least one of planarization, densification, and exfoliation of a porous material using ion beams. The method may use an ion beam generator to generate an ion beam, the ion beam having energy above 0.1 MeV. The ion beam generator may irradiate the surface of a porous material with the ion beam to produce at least one of planarization, densification, and exfoliation of the porous material. 1. A method for providing at least one of planarization , densification , and exfoliation of a porous material using ion beams , the method comprising:using an ion beam generator to generate an ion beam with energy above 100 key; andirradiating the surface of a porous material with the ion beam to produce at least one of planarization, densification, and exfoliation of the porous material.2. The method of claim 1 , wherein the ion beam comprises Ne claim 1 , Ar claim 1 , Kr claim 1 , or Xe ions with a beam energy above 1 MeV.3. The method of claim 1 , wherein an ion irradiation dose provided by the ion beam generator is above 1×10cm.4. The method of claim 1 , wherein the porous material comprises a nanofoam.5. The method of claim 1 , wherein the porous material comprises an aerogel.6. The method of claim 1 , wherein the porous material comprises a silica aerogel.7. The method of claim 1 , further comprising moving the ion beam or the porous material in a raster pattern when irradiating the porous material with ions.8. The method of claim 1 , wherein the ion beam generator generates ions having energies above 0.1 MeV with ion masses from H to U.9. A system for providing at least one of planarization claim 1 , densification claim 1 , and exfoliation of a porous material using ion beams claim 1 , the system comprising:an ion beam generator to generate an ion beam with energy above 100 key; anda controller moving at least one of the porous material or the ion beam in a raster scan pattern to irradiate the surface of the porous material to produce at ...

Gas Field Ionization Ion Source and Ion Beam Apparatus

In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region. 115-. (canceled)16. An ion beam apparatus comprising:a gas field ionization ion source for generating an ion beam;a sample stage for holding a sample;a lens system that focuses the ion beam emitted from the gas field ionization ion source so as to be irradiated onto the sample;a deflection system that deflects the ions so as to change the irradiation position of the ion beam on the sample;a secondary particle detector for detecting secondary particles emitted from the sample;an image processing unit for forming an observation image of the sample by using the detection results of the secondary particle detector; anda control unit for controlling the lens system and the deflection system so as to adjust the irradiation position of the ion beam,wherein the gas field ionization ion source comprises:an emitter electrode having a needle-shaped apex provided with a micro-protrusion having a single atom ...

GCIB NOZZLE ASSEMBLY

A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle. 1. A nozzle assembly for use in a gas cluster beam (GCB) processing system , comprising:a gas supply manifold having at least one gas supply conduit;a first nozzle component through which a first portion of at least one conical nozzle is formed that extends from a nozzle throat at a first entry surface to an intermediate exit at a first exit surface;a second nozzle component through which a second portion of said at least one conical nozzle extends from an intermediate inlet at a second entry surface to a nozzle exit at a second exit surface, said second nozzle component further including a re-entrant cavity into which said first nozzle component inserts such that said first exit surface mates with said second entry surface, and said first nozzle portion aligns with said second nozzle portion to form said conical nozzle; anda sealing member disposed between said first nozzle component and said gas supply manifold such that when said second nozzle component is attached to said gas supply manifold, said first entry surface of said first nozzle component presses against said sealing member and creates a seal with said gas supply manifold surrounding an outlet of said at least one gas supply conduit.2. The assembly of claim 1 , wherein said first nozzle component is a monolithic piece composed of ceramic.3. The assembly of claim 1 , wherein said second nozzle ...

METHOD AND DEVICE FOR THE PRODUCTION OF HIGHLY CHARGED IONS

The invention relates to a novel ion source, which uses method for the production of highly charged ions in the local ion traps created by an axially symmetric electron beam in the thick magnetic lens. The highly charged ions are produced in the separate local ion traps, which are created as a sequence of the focuses (F, F, and F) of the electron beam (EB) rippled in the magnetic field (B(z)). Since the most acute focus is called the main one, the ion source is classified as main magnetic focus ion source (MaMFIS/T), which can also operate in the trapping regime. The electron current density in the local ion traps can be much greater than that in the case of Brillouin flow. For the ion trap with length of about 1 mm, the average electron current density of up to the order of 100 kA/cmcan be achieved. Thus it allows one to produce ions in any charge state for all elements of the Periodic Table. In order to extract the ions, geometry of the electron beam is changed to a relatively smooth electron beam by setting the potential of the focusing electrode (W) of the electron gun negative with respect to the potential of the cathode (C). 1. Method for the production of highly charged ions by generating an electron beam propagating along a drift tube and traversing a magnetic field; forming the electron beam with variable radius varying along the drift tube in a trapping mode and', 'changing the geometry of the electron beam so that the electron beam with variable radius is changed into an electron beam with constant radius along the drift tube in an extraction mode., 'comprising'}2. Method according to claim 1 , wherein the trapping mode is executed by creating a sequence of acute optical focuses forming local ion traps along the electron beam focused by the magnetic field.3. Method according to any of the or claim 1 , wherein the electron beam is led to propagate in an axial direction within a drift tube of either cylindrical or conical form.4. Method according to any of ...

SCANNING ION MICROSCOPE AND SECONDARY PARTICLE CONTROL METHOD

The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image. 1. A scanning ion microscope comprising:an ion source;a specimen stage configured to hold a specimen;an ion optical system configured to cause ions emitted from the ion source converge on the specimen and make deflection of the converged ions to a given position on the specimen;an ion controller configured to control the ion optical system;a secondary particle detector configured to detect a secondary particle emitted from the specimen; andan image processing unit configured to form an image in which by a signal from the secondary particle detector corresponds to the deflection of the converged ions, and store the image in a storage unit and displays the image on a display unit; wherein the scanning ion microscope further comprises:a support member, which is electrically-conductive, configured to support a thin film which is irradiated with the ions, is disposed between the ion optical system and the specimen; anda potential control unit configured to control a first electric potential, which is an electric potential of the support member.2. The scanning ion microscope according to claim 1 , further comprising an electrode potential control unit configured to control a second electric potential claim 1 , which is an electric potential of an electrode that is disposed between the thin film and the specimen claim 1 , the electrode ...

Repair Apparatus

There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions. 1. A repair apparatus comprising:a gas field ion source which includes an ion generation section including a sharpened tip;a cooling unit which is configured to cool the tip;an ion beam column which is configured to form a focused ion beam by focusing ions of a gas generated in the gas field ion source;a sample stage which is configured to move while a sample to be irradiated with the focused ion beam formed by the ion beam column is placed thereon;a sample chamber which is configured to accommodate at least the sample stage therein; anda control unit which is configured to repair a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column,wherein the gas field ion source is configured to generate nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.2. The repair apparatus according to claim 1 ,wherein the tip includes a pyramid structure having an apex constituted by a single iridium atom.3. The repair apparatus according to claim 1 ,wherein the tip is constituted by an iridium single crystal with <210> orientation, and an apex portion of the tip has an apex surrounded by one {100} ...

CHARGED PARTICLE SOURCE

This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

POSITIVE AND NEGATIVE ION SOURCE BASED ON RADIO-FREQUENCY INDUCTIVELY COUPLED DISCHARGE

The present invention discloses a positive and negative ion source based on radio-frequency inductively coupled discharge, comprising a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply. In the present invention, the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved. 1. A positive and negative ion source based on radio-frequency inductively coupled discharge , comprising a tube , a middle portion of which is communicated with an intake pipe; and discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube;one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; and the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; andthe other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a ...

FIELD IONIZATION SOURCE, ION BEAM APPARATUS, AND BEAM IRRADIATION METHOD

An H ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H ion can be obtained by use of a probe current within a voltage range around a second peak occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas. 1. An ion beam apparatus , comprising:{'sub': '3', 'sup': '+', 'a gas field ionization source that emits an ion beam containing a H ion;'}a beam irradiation column that includes a lens capable of focusing an ion emitted from the gas field ionization source, and a deflector capable of deflecting an ion beam;a sample stage on which a sample to be irradiated with an ion beam passing through the beam irradiation column is loaded; anda sample chamber that houses at least the sample stage,{'sub': '3', 'sup': '+', 'wherein an abundance ratio of the H ion is the highest in ion species emitted from an emitter tip of the gas field ionization source.'}2. The ion beam apparatus according to claim 1 ,{'sub': '3', 'sup': '+', 'further comprising a filter that allows an emitted H ion to penetrate based on ion mass in a selective manner.'}3. The ion beam apparatus according to claim 2 ,{'sub': '3', 'sup': '+', 'wherein the filter has a function of allowing only a H ion to penetrate in a selective manner.'}4. The ion beam apparatus according to claim 2 ,wherein the filter has a function of producing a magnetic field.5. The ion beam apparatus according to claim 1 ,further comprising a function of correcting a mask or mold for nanoimprint lithography by the ion beam.6. An ion beam apparatus claim 1 , comprising:a gas field ionization source;a beam irradiation column that is equipped with a lens capable of focusing ...

APPARATUS AND METHOD FOR GENERATING HIGH CURRENT NEGATIVE HYDROGEN ION BEAM

An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive Hgas; a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and an extraction assembly arranged to extract the H ions from the ion source chamber. 1. An apparatus to generate negative hydrogen ions , comprising:{'sub': '2', 'an ion source chamber having a gas inlet to receive Hgas;'}{'sub': 2', '2, 'a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas;'}{'sup': '−', 'sub': '2', 'a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and'}{'sup': '−', 'an extraction assembly arranged to extract the H ions from the ion source chamber, wherein the light source is embedded at least partially in a wall of the ion source chamber, or is disposed within the ion source chamber.'}2. The apparatus of claim 1 , the light source extending along a first side of the ion source chamber and along a second side of the ion source chamber.3. The apparatus of claim 1 , the low energy electron source extending along a third side of the ion source chamber and along a fourth side of the ion source chamber.4. The apparatus of claim 1 , the light source generating radiation having an energy of at least 1.5 eV.5. The apparatus of claim 1 , the light source comprising radiation having a photon energy of 1.5 eV to 5.0 eV.6. The apparatus of claim 1 , the light source comprising a light-emitting diode claim 1 , a laser claim 1 , or a broad spectrum light source generating photons having ...

APPARATUS FOR MULTIPLE CHARGED-PARTICLE BEAMS

Systems and methods for observing a sample in a multi-beam apparatus are disclosed. A charged particle optical system may include a deflector configured to form a virtual image of a charged particle source and a transfer lens configured to form a real image of the charged particle source on an image plane. The image plane may be formed at least near a beam separator that is configured to separate primary charged particles generated by the source and secondary charged particles generated by interaction of the primary charged particles with a sample. The image plane may be formed at a deflection plane of the beam separator. The multi-beam apparatus may include a charged-particle dispersion compensator to compensate dispersion of the beam separator. The image plane may be formed closer to the transfer lens than the beam separator, between the transfer lens and the charged-particle dispersion compensator. 1. A charged particle optical system comprising:a first deflector array configured to deflect a plurality of beamlets of a primary charged particle beam generated by a source;a first lens configured to focus the plurality of beamlets to form a plurality of images of the source on an image plane; andan objective lens configured to project the plurality of images onto a sample and form a plurality of probe spots thereon.2. The charged particle optical system of claim 1 , further comprising:a beam separator configured to separate the plurality of beamlets and secondary charged particles emitted from the sample due to illumination by the plurality of probe spots.3. The charged particle optical system of claim 2 , wherein the image plane is at least near the beam separator.4. The charged particle optical system of claim 3 , wherein deflection angles of the plurality of beamlets deflected by the first deflector array are set to obtain a predetermined pitch of the plurality of probe spots and to decrease aberrations thereof.5. The charged particle optical system claim 1 , ...

Metal Plating of Grids for Ion Beam Sputtering

Provided herein are deposition systems utilizing coated grids in an ion deposition process which provide more predictable erosion of the coating rather than erosion of the grid itself. Further, coatings may be utilized in which the coating material does not act as a contaminant to the deposition process, thereby eliminating contamination of the sample surface due to deposition of unwanted grid material. Also provided are methods of refurbishing a coated grid by periodically replacing the coating material thus protecting the grid itself and allowing a grid to be used indefinitely. 1. A deposition system comprising:an ion source suitable for providing a beam of selected ions, the ion source comprising at least one coated grid, the coated grids comprising: an electrically conductive substrate comprising a plurality of apertures extending through a thickness direction of the substrate; and a coating covering an outer surface of the substrate, wherein the coating is formed of a metallic or semiconducting material; and a deposition chamber receiving the beam of selected ions when emitted from the ion source.2. The system of claim 1 , wherein the substrate comprises molybdenum claim 1 , graphite claim 1 , titanium or a titanium alloy.3. The system of claim 1 , wherein at least a portion of the substrate has a mean radius of curvature selected from the range of ±10 cm to ±10 m.4. The system of claim 1 , wherein a mean thickness of the grid is selected from the range of 0.1 mm to 1 cm.5. The system of claim 1 , wherein the apertures are positioned in a pattern selected from one of the group consisting of a square claim 1 , a triangle or a hexagon claim 1 , a mean diameter of the apertures is selected from the range from 0.1 mm to 1 cm claim 1 , and a mean center-center distance between adjacent apertures is selected from the range of 0.1 mm to 1 cm.68- (canceled)9. The system of claim 1 , wherein the coating is selected from the group consisting of: titanium claim 1 , ...

CARBON MATERIALS FOR CARBON IMPLANTATION

A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CFOHwherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide. 122-. (canceled)23. A gas composition comprising:{'sub': 2', '2, 'a carbon-containing dopant material for implanting carbon ions into a substrate, wherein the carbon-containing dopant material is any one of CO, COor COF; and'}at least one additional gas.24. The gas composition of claim 23 , wherein the at least one additional gas comprises a gas selected from the group consisting of oxygen claim 23 , oxygen-containing gas claim 23 , fluorine-containing gas claim 23 , COF claim 23 , CO claim 23 , CO claim 23 , air claim 23 , hydrogen claim 23 , fluorine claim 23 , nitrogen claim 23 , argon claim 23 , xenon claim 23 , and helium.25. The gas composition of claim 23 , wherein the carbon-containing dopant material comprises at least one of CO and CO claim 23 , and wherein the additional gas or series of gases comprises one or more of F claim 23 , COF claim 23 , and CF.26. The gas composition of claim 23 , wherein the carbon-containing dopant material comprises CO.27. The gas composition of claim 23 , wherein the at least one additional gas comprises hydrogen.28. The gas composition of claim 23 , wherein the at least one additional gas comprises xenon and hydrogen.29. The gas composition of claim 23 , wherein the at least one additional gas comprises a fluorine-containing gas.30. The gas composition of claim 23 , wherein the carbon- ...

CHARGED PARTICLE BEAM APPARATUS

A charged particle beam apparatus for processing a tip end portion of a sample into a needle shape, includes an ion beam irradiation unit that irradiates the tip end portion with ion beams, an electron beam irradiation unit that irradiates the tip end portion with electron beams, a secondary electron detection unit that detects secondary electrons generated at the tip end portion by the irradiation with the electron beams, and an EBSD detection unit that detects diffracted electrons generated at the tip end portion by the irradiation with the electron beams. 1. A charged particle beam apparatus for processing a tip end portion of a sample into a needle shape , the charged particle beam apparatus comprising:an ion beam irradiation unit configured to irradiate the tip end portion with ion beams;an electron beam irradiation unit configured to irradiate the tip end portion with electron beams;a secondary electron detection unit configured to detect secondary electrons generated at the tip end portion by the irradiation with the electron beams; andan EBSD detection unit configured to detect diffracted electrons generated at the tip end portion by the irradiation with the electron beams.2. The charged particle beam apparatus according to claim 1 ,wherein the ion beam irradiation unit and the electron beam irradiation unit are disposed such that the ion beams and the electron beams are perpendicular to each other.3. The charged particle beam apparatus according to claim 2 ,wherein the EBSD detection unit has a detection surface for detecting the diffracted electrons, the detection surface being directed toward the tip end portion, andwherein the detection surface is disposed in a direction perpendicular to both of the ion beams and the electron beams when viewed from the tip end portion.4. The charged particle beam apparatus according to claim 1 , further comprising:an EDS detection unit configured to detect X rays generated at the tip end portion.5. The charged particle ...

WRITING DATA CORRECTING METHOD, WRITING METHOD, AND MANUFACTURING METHOD OF MASK OR TEMPLATE FOR LITHOGRAPHY

According to one embodiment, a writing data correction method includes preparing a data table having a combination of a pattern resizing amount, a beam irradiation amount, and a back-scattering coefficient for each pattern size; converting, into writing data, a layout obtained by dividing a design layout into a plurality of regions in accordance with each pattern size, resizing patterns of the design layout writing based on the pattern resizing amounts corresponding to the pattern sizes contained in the respective regions, and executing a proximity effect correction for the resized patterns contained in the respective regions based on the beam irradiation amounts and the back-scattering coefficients corresponding to the pattern sizes of the design layout contained in the respective regions, and on the beam irradiation amounts and the back-scattering coefficients corresponding to the pattern sizes of the design layout contained in the regions adjacent to the respective regions. 1. A writing data correction method , comprising:preparing a data table and storing the data table in a storage unit, the data table specifying a combination of a pattern resizing amount, a beam irradiation amount, and a back-scattering coefficient for each pattern size for obtaining a desired pattern size after writing of the pattern;converting, into writing data, a region-divided design layout obtained by dividing a design layout of a circuit pattern into a plurality of regions corresponding to each pattern size in the design layout;resizing patterns of the design layout contained in the respective regions of the writing data based on the pattern resizing amounts within the data table corresponding to the pattern sizes of the design layout contained in the respective regions; andexecuting a proximity effect correction for the resized patterns contained in the respective regions based on the beam irradiation amounts and the back-scattering coefficients within the data table corresponding to ...

Charged Particle Source

This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero. 1. A condenser lens system , comprising:a first magnetic lens above an electron source; anda second magnetic electron source below the electron source,wherein when a first magnetic field generated by the first magnetic lens is anti-symmetric to a second magnetic field generated by said second magnetic lens at a tip of the electron source, a compound magnetic field superposed by the first and second magnetic field is weakest at the tip and largest immediately long an optical axis of the electron source, and the compound magnetic field provides a high resolution mode,wherein when the first magnetic field generated by the first magnetic lens is symmetric to the second magnetic field generated by the second magnetic lens at the tip of the electron source, the compound magnetic field superposed by the first and second magnetic field is largest at the tip of the electron source, and the compound magnetic field provides a high throughput mode.2. The condenser lens system according to claim 1 , wherein the weakest magnetic field at the tip of the electron source is zero.3. The condenser lens system according to claim 2 , wherein the first magnetic lens includes a first excitation coil encompassed by a first yoke.4. The condenser lens system according to claim 3 , wherein the second magnetic lens includes a second excitation coil encompassed by a second yoke.5. The condenser lens system according to claim 4 , further comprising a vacuum tube encompassing the electron source and ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. 124.-. (canceled)25. A charged-particle beam apparatus , comprising:a charged particle source configured to provide a primary beam;an image forming unit configured to form a plurality of images of the charged particle source using a plurality of beamlets of the primary beam;a first projection system with an objective lens and configured to form a plurality of probe spots on a sample from the plurality of beamlets;a second projection system configured to focus a plurality of secondary beams generated by the plurality of probe spots on the sample;a beam separator configured to separate the plurality of beamlets and the plurality of secondary beams; anda detection device with a plurality of detection elements configured to receive the plurality of secondary beams;wherein the second projection system includes an anti-rotation magnetic lens configured to eliminate a rotation of the plurality of secondary beams on the detection device.26. The charged-particle beam apparatus of claim 25 , wherein the first projection system includes a transfer lens to focus the plurality of beamlets to land on the sample perpendicularly.27. The charged-particle beam apparatus of claim 25 , further comprising:a deflection scanning unit configured to scan the plurality of probe spots on the sample.28. The charged-particle beam ...

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate. 1. An ion beam treatment or implantation system , comprising:an ion source emitting a plurality of parallel ion beams on a single plane having a given spacing, and wherein each of the plurality of parallel ion beams is point-shaped; anda first lens magnet having a non-uniform magnetic field receiving the plurality of ion beams from the ion source and focusing the plurality of ion beams toward a common point.2. The system of claim 1 , further comprising a deflector coupled to the ion source for deflecting the plurality of parallel ion beams for ion energy and mass separation.3. The system of claim 1 , wherein the ion source includes a plurality of magnetic deflectors and a resolving plate having a plurality of holes each associated with one of the magnetic deflectors claim 1 , said resolving plate configured to only pass through ions having a select mass to energy ratio.4. The system of claim 1 , wherein the ion source comprises:a microwave source;a waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings;a plasma chamber in communication with the waveguide conduit through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide conduit, said ...

LIGHT BATH FOR PARTICLE SUPPRESSION

An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm. 1. An apparatus for reducing an amount of non-positively charged particles in an ion beam , comprising:a light source, disposed on one side of the ion beam and emitting light at a wavelength sufficiently short so as to ionize non-positively charged particles into positively charged particles; anda positively biased electrode downstream from the light source, to repel the positively charged particles, wherein the ion beam is directed toward a workpiece after exposure to the light source.2. The apparatus of claim 1 , wherein the wavelength is less than 250 nm.3. The apparatus of claim 1 , wherein the wavelength is less than 200 nm.4. The apparatus of claim 1 , further comprising a light sink to absorb light emitted by the light source.5. The apparatus of claim 4 , wherein the light sink is disposed on an opposite side of the ion beam from the light source.6. The apparatus of claim 1 , wherein the non-positively charged particles comprise neutral particles.7. The apparatus of claim 1 , wherein the non-positively charged particles comprise negatively charged particles.8. A beamline ion implantation system claim 1 , comprising:an ...

Methods of optical device fabrication using an electron beam apparatus

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

METHOD, DEVICE AND SYSTEM FOR THE TREATMENT OF BIOLOGICAL CRYOGENIC SAMPLES BY PLASMA FOCUSED ION BEAMS

The invention relates to a method, a device and a system for the treatment of biological frozen samples using plasma focused ion beams (FIB). The samples can then be used for mass spectrometry (MS), genomics, such as gene sequencing analysis or next generation sequencing (NGS) analysis, and proteomics. The present invention particularly relates to a method of treatment of at least one biological sample. This method is particularly used for high performance microscopy, proteomics analytics, sequencing, such as NGS etc. According to the present invention the method comprises the steps of providing at least one biological sample in frozen form. The milling treats at least one part of the sample by a plasma ion beam comprising at least one of an O and/or a Xe plasma. 1. A method of analyzing a biological sample , comprising:providing at least one biological sample in frozen form;{'sup': '+', 'isolating at least a target from the sample by milling the sample using a plasma ion beam comprising at least an O plasma; and'}analyzing the isolated target, wherein the analysis includes proteomic analysis and/or next-generation sequencing.2. The method of claim 1 , wherein isolating at least a target from the sample by milling the sample using a plasma ion beam includes isolating the target by sputtering away at least an unwanted part adjacent to the target using the plasma ion beam.3. The method of claim 2 , further comprising transferring the isolated target to a spectrometer for the proteomic analysis.4. The method of claim 3 , wherein the spectrometer is an orbitrap fusion mass spectrometer.5. The method of claim 2 , further comprising transferring the isolated target to a next-generation sequencing platform for the next generation sequencing.6. The method of claim 2 , further comprises obtaining an accumulated sample including a plurality of targets from one or more biological samples claim 2 , wherein analyzing the isolated target includes analyzing the accumulated sample. ...

Systems, devices, and methods for ion beam modulation

Embodiments of systems, devices, and methods relate to an ion beam source system. An ion source is configured to provide a negative ion beam to a tandem accelerator system downstream of the ion source, and a modulator system connected to an extraction electrode of the ion source is configured to bias the extraction electrode for a duration sufficient to maintain acceleration voltage stability of the tandem accelerator system.

Process gas enhancement for beam treatment of a substrate

A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

Boron Implanting Using A Co-Gas

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used. 1. A method of implanting dopant into a workpiece , comprising:introducing a first source gas into a first sub-chamber of a chamber of an ion source, the first source gas comprising a dopant and fluorine;introducing argon into a second sub-chamber of the chamber;ionizing the first source gas and the argon in the chamber;extracting ions from the first sub-chamber as a dopant ion beam and directing the dopant ion beam toward the workpiece; andextracting ions from the second sub-chamber as an argon ion beam and directing the argon ion beam toward the workpiece, where the argon ion beam strikes a location on the workpiece concurrently or after the location has been implanted by the dopant ion beam.2. The method of claim 1 , further comprising:introducing a second source gas into the first sub-chamber, the second source gas comprising hydrogen and at least one of silicon and germanium;ionizing the second source gas in the first sub-chamber; andextracting ions of the second source gas as part of the dopant ion beam.3. The method of claim 1 , wherein the dopant ion beam and the argon ion beam are focused so as to simultaneously strike the location of the workpiece.4. ...

ION SOURCE DEVICE

The invention provides an electron-impact ion source device having high brightness as compared to known Nier-type ion sources, while providing similar advantages in terms of flexibility of the generated ion species, for example. The ionization chamber of the device operates at high pressures and provides for a large number of interactions between the electron beam and the gas molecules. 1. An ion source device comprising means for forming and guiding an electron beam along a first axis and an ionization chamber having an inlet for a gas and an inlet for said electron beam , wherein the ionization chamber comprises an ion beam outlet located on a second axis that is generally parallel to said first axis , surrounded by an ion carpet comprising co-planar and substantially concentric electrodes for funneling ions formed by interaction of said electron beam with said gas towards said ion beam outlet to form an ion beam , and an electronic circuit configured for applying an electric potential to said electrodes.2. The ion source device according to claim 1 , wherein said electronic circuit is configured for applying a radio-frequency electric potential to said electrodes.3. The ion source device according to claim 1 , wherein said electronic circuit is configured for applying DC electric potentials to said electrodes.4. The ion source device according to claim 1 , wherein the electrodes of said ion carpet are supported on a substantially planar substrate having an aperture aligned with said ion beam outlet.5. The ion source device according to claim 4 , wherein said electrodes are supported on a first side of said substrate claim 4 , and wherein said electronic circuit is supported on the second side of said substrate.6. The ion source device according to claim 4 , wherein said substrate is an integral part of an internal wall of said ionization chamber.7. The ion source device according to claim 1 , wherein said co-planar and concentric electrodes are arranged to have ...

Compensated Location Specific Processing Apparatus And Method

An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing. 1. An apparatus for processing a workpiece with a beam , comprising:a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam;a scanner for translating the workpiece through the particle beam;a scanner control circuit configured to control at least one scan property of the scanner; anda beam control circuit configured to control the beam flux of the particle beam according to a duty cycle for the particle beam;a control system including a controller coupled with the scanner control circuit and beam control circuit, the control system configured for processing parametric data associated with at least one attribute of at least a portion of the workpiece for use in corrective processing of the workpiece;the controller configured to instruct the scanner control circuit and instruct the beam control circuit in corrective processing of the workpiece to alter at least one workpiece attribute;the controller further configured to controllably vary the duty cycle through the beam control circuit for addressing a limitation in controlling a scan property of the scanner and thereby expand the dynamic range of the beam processing.2. The apparatus of claim 1 , wherein the particle beam includes a charged particle beam or an un-charged particle beam.3. The apparatus of claim 2 , where ...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING THE SAME

According to one embodiment, a method of manufacturing a semiconductor device includes forming a mask on a film provided on a substrate, selectively etching the film by applying an ion beam of an inert gas to the film after the forming of the mask, and applying an electron beam to the film after the etching. 1. A method of manufacturing a semiconductor device , comprising:forming a mask or a film provided on a substrate;selectively etching the film by applying an ion beam of an inert gas to the film after the forming of the mask; andapplying an electron beam to the film after the etching.2. The method of claim 1 , whereinthe film has a stacked layer structure in which a nonmagnetic layer is provided between magnetic layers.3. The method of claim 2 , whereinthe film constitutes an MTJ element includes a storage layer, a reference layer, and a tunnel barrier layer between the storage layer and the reference layer.4. The method of claim 2 , whereinthe ion beam is applied from an ion source to the film.5. The method of claim 4 , whereinthe ion beam is applied obliquely to a surface of the film while rotating the substrate.6. The method of claim 1 , whereinthe electron beam is applied from an electron source to the film.7. The method of claim 6 , whereinthe electron beam is applied to the film while heating the substrate.8. The method of claim 6 , whereinthe electron beam is applied obliquely to a surface of the film while rotating the substrate.9. The method of claim 1 , whereinthe inert gas is one of Ar, He, Ne, Kr, Xe and Ra.10. The method of claim 1 , whereinthe selectively etching the film includes applying the ion beam to process the film and applying an electron beam.11. An apparatus for manufacturing a semiconductor device claim 1 , comprising:a chamber accommodating a stage for holding a substrate;an ion source provided in the chamber and configured to apply an ion beam of an inert gas to the substrate;an electron source provided in the chamber and configured to ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible. 1. (canceled)2. A source-conversion unit of an electron source that emits an electron beam ,the source-conversion unit comprising:a micro-deflector array that facilitates creation of a plurality of images of the electron source, each of the images being associated with a corresponding beamlet of a plurality of beamlets that are derived from the electron beam; and a micro-compensator array that facilitates adding aberration to each of the beamlets.3. The source-conversion unit of claim 2 , further comprising:a beamlet limiting component that includes a plurality of beamlet limiting apertures, each of the apertures to limit a corresponding beamlet of the plurality of beamlets.4. The source-conversion unit of claim 2 ,wherein the micro-deflector array includes a plurality of micro-deflectors,wherein the micro-compensator array includes a plurality of micro-compensators, andwherein each of the micro-deflectors facilitates creation of a corresponding image of the plurality of images.5. The source-conversion unit of claim 4 ,wherein each of the micro-compensators facilitates adding an aberration to a corresponding beamlet of the plurality of beamlets.6. The source-conversion unit of claim 4 ,wherein the plurality of micro-compensators facilitates adding a plurality of aberrations to the plurality of beamlets, each of the micro-compensators facilitates adding a corresponding aberration of the ...

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot. 1. A plasma deposition apparatus , comprising:a waveguide conduit having a plurality of primary slots therein located on one side of the waveguide conduit, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of primary slots, said waveguide conduit further comprising a plurality of secondary slots, each of said secondary slots being aligned with and on an opposite side of said waveguide conduit from a different one of said plurality of primary slots, said waveguide conduit further comprising a primary plunger adjustably mounted in the waveguide conduit to create a standing microwave in the waveguide conduit, said standing microwaves having maxima in microwave power at a location of said primary and secondary slots;a set of secondary plungers fitted in said secondary slots, wherein each secondary plunger includes an opening extending therethrough, and wherein each secondary plunger in a given secondary slot is movable in a direction toward or away from a primary slot aligned with said given secondary slot to direct radiation emitted through said plurality of primary slots; andone or more pipes extending through the ...

Techniques for Optimizing Nanotips Derived from Frozen Taylor Cones

Optimization techniques are disclosed for producing sharp and stable tips/nanotips relying on liquid Taylor cones created from electrically conductive materials with high melting points. A wire substrate of such a material with a preform end in the shape of a regular or concave cone, is first melted with a focused laser beam. Under the influence of a high positive potential, a Taylor cone in a liquid/molten state is formed at that end. The cone is then quenched upon cessation of the laser power, thus freezing the Taylor cone. The tip of the frozen Taylor cone is reheated by the laser to allow its precise localized melting and shaping. Tips thus obtained yield desirable end-forms suitable as electron field emission sources for a variety of applications. In-situ regeneration of the tip is readily accomplished. These tips can also be employed as regenerable bright ion sources using field ionization/desorption of introduced chemical species. 1. A method comprising the steps of:(a) placing at least one electrically conductive material in a vacuum, said electrically conductive material chosen to be a refractory material;(b) heating said at least one electrically conductive material to at least its melting point by a first application of focused energy incident on it, said first application modulated in accordance with an application waveform;(c) applying a positive potential to said at least one electrically conductive material to form at its end a corresponding at least one liquid Taylor cone;(d) quenching said at least one liquid Taylor cone by a cessation of said focused energy to form a corresponding at least one frozen Taylor cone, said cessation modulated in accordance with a cessation waveform;(e) heating a corresponding tip of said at least one frozen Taylor cone by a second application of focused energy incident on said corresponding tip, said second application modulated in accordance with a shaping waveform; and(f) obtaining structural characteristics of said ...

Ion beam device

An ion beam device according to the present invention includes a gas field ion source including an emitter tip supported by an emitter base mount, a ionization chamber including an extraction electrode and being configured to surround the emitter tip, and a gas supply tube. A center axis line of the extraction electrode overlaps or is parallel to a center axis line of the ion irradiation light system, and a center axis line passing the emitter tip and the emitter base mount is inclinable with respect to a center axis line of the ionization chamber. Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

CHARGED PARTICLE MICROSCOPE

The ionized gas supplied to the emitter tip of a gas field ionization ion source is cooled and purified to enable supplying a reliable and stable ion beam. Impurities contained in the ionized gas destabilize the field ionization ion source. The invention is configured to include a first heat exchanger thermally connected to a part of the field ionization ion source, a cryocooler capable of cooling a second gas line and a cold head, the second gas line being connected to the first heat exchanger and circulating a refrigerant, and a second heat exchanger that cools the first and second gas lines and is connected to the cold head. 1. A charged particle microscope that has a field ionization ion source ,the microscope comprising:an emitter tip having a needle-like apex;an ionization chamber having the emitter tip inside the chamber;a first heat exchanger connected to a part of the ionization chamber via a cooling conductor,a cryocooler having a second heat exchanger,a first gas line that supplies a gas to the ionization chamber via the second heat exchanger; anda second gas line thermally connected to the first heat exchanger and the second heat exchanger.2. The charged particle microscope according to claim 1 ,wherein the second heat exchanger is thermally connected to a vacuum chamber retaining a gas molecule supplied to the first gas line, andwherein a mechanism by which a gas flow rate through the first gas line is adjusted is provided on a path between the vacuum chamber and the first gas line.3. The charged particle microscope according to claim 2 , wherein the gas running through the second gas line is partially suppliable to the ionization chamber.4. The charged particle microscope according to claim 1 , comprising:a first device mount that holds the field ionization ion source, a sample holder for holding a sample, and a lens group for converging an ion beam; andan antivibration mechanism that reduces a vibration of the device mount,wherein the cryocooler is ...

LIQUID DROPLET INJECTING APPARATUS AND ION SOURCE

In the known liquid droplet injecting apparatus, when a tube and a nozzle are heated in order to prevent deposition of a solid source material of liquid droplets, the efficiency of injection of liquid droplets into a vacuum vessel is decreased by evaporation of the liquid droplets. The present invention provides a liquid droplet injecting apparatus capable of efficiently injecting liquid droplets into a vacuum vessel. The liquid droplet injecting apparatus includes a liquid container which holds a liquid and whose inside pressure can be adjusted, a liquid droplet generating unit configured to generate liquid droplets from the liquid held in the liquid container, a nozzle which injects the liquid droplets generated in the liquid container, a connecting tube which connects the nozzle and the liquid container, and a first heating unit configured to heat at least one of the connecting tube and the nozzle. 1. A liquid droplet injecting apparatus comprising:a liquid container which holds a liquid and whose inside pressure can be adjusted;a liquid droplet generating unit configured to generate liquid droplets from the liquid held in the liquid container;a nozzle which injects the liquid droplets generated in the liquid container;a connecting tube which connects the nozzle and the liquid container; anda first heating unit configured to heat at least one of the connecting tube and the nozzle.2. The liquid droplet injecting apparatus according to claim 1 , wherein the partial pressure of a substance constituting the liquid droplets in the connecting tube is higher than the vapor pressure of the substance.3. The liquid droplet injecting apparatus according to claim 1 , further comprising a gas introduction tube which has an opening disposed in the liquid container and which introduces a gas into the liquid container.4. The liquid droplet injecting apparatus according to claim 1 , wherein the liquid droplet generating unit includes a vibrator which is disposed on the liquid ...

Method and Apparatus to Eliminate Contaminant Particles from an Accelerated Neutral Atom Beam and Thereby Protect a Beam Target

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target. 1. In the method of ANAB processing of target substrate surfaces , the improvement comprising providing a contaminant particle elimination step in an ANAB process of deriving a neutral beam comprising energetic monomers from a GCIB , which has been subjected to a primary (first) ionization step and accelerated under conditions subject to entraining contaminant particles in the neutral beam and providing an assembly for deflecting or blocking contaminant particles therein , if any , such that no paths of the neutral beam to the target substrate surface to be processed exist other than through the assembly.2. The improved method of wherein the step of deflecting or blocking includes a secondary electron ionization step which is implemented without detrimentally influencing the primary ionization by employing positive offset voltages and a surrounding ground screen to prevent electrons from escaping.3. The improved method of wherein a retarding field is employed in the assembly to block ionized particles from travelling to the target substrate surface.4. The improved method of wherein an electrostatic deflector is employed in the assembly to remove ionized particles from the path to the target substrate surface.5. A method of processing a substrate target surface for one or more of etching claim 1 , smoothing planarization or other modification of the substrate target surface claim 1 , comprising the steps of:(a) forming gas cluster ions by a primary (first) ionization step in a reduced pressure ambient in a chamber,(b) accelerating the gas cluster ions to form an accelerated gas cluster ion beam (GCIB) along a beam path ...

HYDROGEN GENERATOR FOR AN ION IMPLANTER

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source. 1. A terminal system for an ion implantation system , wherein the terminal system comprises:a terminal housing;an ion source assembly disposed within the terminal housing, wherein the ion source assembly is electrically isolated from the terminal housing; anda hydrogen generator disposed within the terminal housing, wherein the hydrogen generator is at the same electrical potential as the ion source assembly and electrically coupled thereto, and wherein the hydrogen generator is configured to produce hydrogen gas and supply said hydrogen gas to the ion source assembly.2. The terminal system of claim 1 , further comprising a gas box claim 1 , wherein the hydrogen generator is disposed within the gas box claim 1 , and wherein the gas box is electrically coupled to the ion source assembly.3. The terminal system of claim 2 , further comprising one or more electrical insulators claim 2 , wherein the one or more electrical insulators electrically isolate the ion source assembly and gas box from the terminal housing.4. The terminal system of ...

Liquid metal ion source and focused ion beam apparatus

A liquid metal ion source (50) includes: a reservoir (10) configured to hold an ion material (M) forming a liquid metal; a needle electrode (20); an extraction electrode (22) configured to cause an ion of the ion material to be emitted from a distal end of the needle electrode; a beam diaphragm (24), which is arranged on a downstream side of the extraction electrode, and is configured to limit a beam diameter of the ion; and a vacuum chamber (30) configured to accommodate and hold the reservoir, the needle electrode, the extraction electrode, and the beam diaphragm in vacuum, wherein the liquid metal ion source further includes an oxidizing gas introducing portion (40), and wherein the oxidizing gas introducing portion communicates to the vacuum chamber, and is configured to introduce an oxidizing gas into a periphery of the needle electrode.

Focused ion beam apparatus

A focused ion beam apparatus (100) includes: a focused ion beam lens column (20); a sample table (51); a sample stage (50); a memory (6M) configured to store in advance three-dimensional data on the sample table and an irradiation axis of the focused ion beam, the three-dimensional data being associated with stage coordinates of the sample stage; a display (7); and a display controller (6A) configured to cause the display to display a virtual positional relationship between the sample table (51v) and the irradiation axis (20Av) of the focused ion beam, which is exhibited when the sample stage is operated to move the sample table to a predetermined position, based on the three-dimensional data on the sample table and the irradiation axis of the focused ion beam.

DURABLE 3D GEOMETRY CONFORMAL ANTI-REFLECTION COATING

Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses. 1. A method of depositing a film on a curved surface of a substrate , the method comprising:positioning the curved surface with respect to a source of a deposition system, wherein the source includes an effective surface having a curved shape in accordance with the curved surface of the substrate; andcausing the source to emit a plurality of particles such that the plurality of particles become deposited on the curved surface as the film, wherein the curved shape of the effective surface is associated with a thickness uniformity of the film.2. The method of claim 1 , wherein the deposition system is a sputter deposition system and the source is a sputter target claim 1 , wherein causing the source to emit the plurality of particles comprises directing a sputter gas at the sputter target such that the plurality of particles are sputtered from the sputter target.3. The method of claim 1 , wherein the deposition system is a plasma enhanced chemical vapor deposition (PECVD) system and the source is a hollow cathode source claim 1 , wherein causing the source to emit the plurality of particles comprises:supplying a reaction gas to the hollow cathode source, andcausing the hollow cathode source to discharge a plasma having ions and/or other reactive chemical species corresponding to the plurality of particles.4. The method of claim 3 , wherein the deposition system includes ...

DRUG DELIVERY SYSTEM AND METHOD OF MANUFACTURING THEREOF

An apparatus and method provided a drug layer formed on a surface region of a medical device, the drug layer comprised of a drug deposition and a carbonized or densified layer formed from the drug deposition by irradiation on an outer surface of the drug deposition, wherein the carbonized or densified layer does not penetrate through the drug deposition and is adapted to release drug from the drug deposition at a predetermined rate. 1. A drug delivery system , comprising:a medical device having at least one surface region; anda drug layer formed on the at least one surface region, the drug layer comprised of a drug deposition on the at least one surface region and a carbonized or densified layer formed from the drug deposition by irradiation on an outer surface of the drug deposition, wherein the carbonized or densified layer does not penetrate through the drug deposition and is adapted to release drug from the drug deposition at a predetermined rate.2. The drug delivery system of claim 1 , wherein the drug deposition does not include any polymers.3. The drug delivery system of claim 1 , wherein the drug deposition is encapsulated between the carbonized or densified layer and the at least one surface region.4. The drug delivery system of claim 1 , further comprising at least one additional drug layer formed on the first said drug layer claim 1 , the additional drug layer comprised of an additional drug deposition and an additional carbonized or densified layer formed from the additional drug deposition by irradiation on an outer surface of the additional drug deposition.5. The drug delivery system of claim 1 , wherein the at least one surface region is a previously applied drug layer.6. The drug delivery system of claim 1 , wherein the irradiation is gas-cluster ion beam irradiation.7. The drug delivery system of claim 1 , wherein the irradiation is Neutral Beam irradiation derived from a gas-cluster ion beam.8. The drug delivery system of claim 1 , wherein the ...

ETCHING ALUMINUM NITRIDE OR ALUMINUM OXIDE TO GENERATE AN ALUMINUM ION BEAM

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

Electrodynamic mass analysis with rf biased ion source

Provided herein are approaches for performing electrodynamic mass analysis with a radio frequency (RF) biased ion source to reduce ion beam energy spread. In some embodiments, a system may include an ion source including a power supply, the ion source operable to generate a plasma within a chamber housing, and an extraction power assembly including a first power supply and a second power supply electrically coupled with the chamber housing of the ion source, wherein the first power supply and the second power supply are operable to bias the chamber housing of the ion source with a time modulated voltage to extract an ion beam from the ion source. The system may further include an electrodynamic mass analysis (EDMA) assembly operable to receive the ion beam and perform mass analysis on the ion beam.

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

An ion beam treatment or implantation system includes an ion source emitting ion beams. The ion source includes a microwave source and a curved waveguide conduit having openings therein. The waveguide conduit is coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings. The ion source also includes a curved plasma chamber in communication with the waveguide conduit through the openings. The plasma chamber receives through the openings microwaves from the waveguide conduit. The plasma chamber includes magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which the ion beams are extracted. 1. An ion beam treatment or implantation system , comprising:an ion source emitting a plurality of ion beams, wherein the ion source comprises:(a) a microwave source;(b) a curved waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings; and(c) a curved plasma chamber in communication with the waveguide conduit through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide conduit, said plasma chamber including a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber, said plasma chamber further comprising a charged cover at a side of the chamber opposite the side containing the plurality of openings, said cover including extraction holes through which the plurality of ion beams are extracted.2. The system of claim 1 , wherein the curved waveguide conduit and the curved plasma chamber are configured to steer the ion beams toward a ...

Techniques For Processing A Substrate

Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform. 1. A mask for processing a substrate , the mask comprising:one or more first apertures disposed in a first row; andone or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.2. The mask according to claim 1 , wherein the one or more first apertures and the one or more second apertures have different sizes.3. The mask according to claim 1 , wherein the one or more first apertures and the one or more second apertures have non-uniform alignment along a height direction of the mask.4. The mask according to claim 3 , wherein the one or more first apertures and the one or more second apertures are without an overlapping region along the height direction.5. The mask according to claim 3 , wherein the one or more first apertures and the one or more second apertures overlap along the height direction to define an overlapping region.6. The mask according to claim 1 , wherein the mask comprises two or more first apertures in the first row and two or more second apertures in the second row claim 1 , wherein the two or more first apertures in the first row are aligned with one another along a width direction of the mask.7. The mask according to claim 6 , wherein the two or more second apertures in the second row are aligned with one another along the width direction ...

IN-SITU CLEANING USING HYDROGEN PEROXIDE AS CO-GAS TO PRIMARY DOPANT OR PURGE GAS FOR MINIMIZING CARBON DEPOSITS IN AN ION SOURCE

An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber. An inert gas is further introduced and ionized to counteract oxidation of a cathode due to the decomposition of the hydrogen peroxide. A vacuum pump system removes the hydrocarbons from the ion source chamber, wherein deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased. 1. An ion source assembly for improving ion implantation performance , the ion source assembly comprising:an ion source chamber;a source gas supply configured to provide a molecular carbon source gas to the ion source chamber;a source gas flow controller configured to control a flow of the molecular carbon source gas to the ion source chamber;an excitation source configured to excite the molecular carbon source gas, therein forming carbon ions and atomic carbon;an extraction electrode configured to extract the carbon ions from the ion source chamber, therein forming an ion beam;a hydrogen peroxide co-gas supply configured to ...

AUTOMATED OPERATIONAL CONTROL OF MICRO-TOOLING DEVICES

A micro-tooling device, such as, for example, a scanning electron microscope or a focused-ion beam microscope, provides images. A first machine-learning algorithm and a second machine-learning algorithm are sequentially coupled. The first machine-learning algorithm determines a progress along a predefined workflow based on feature recognition in images associated with the workflow. The second machine-learning algorithm predicts settings of operational parameters of the micro-tooling device in accordance with the progress along the predefined workflow. 1. A method , comprising:obtaining a time series of images while using one or more first settings of operational parameters of a micro-tooling device;providing each image of the time series of the images to one or more first algorithms;obtaining, from the one or more first algorithms, a time series of one or more properties of a predefined feature included in the images;providing at least some of the images of the time series of images to a third algorithm;obtaining, from the third algorithm, at least one parameter selected from the group consisting an orientation of the predefined feature in the at least some of the images and a localization of the predefined feature in the at least some of the images;providing to a second algorithm: i) the time series of the one or more properties of the predefined feature included in the images; and ii) the at least one parameter;obtaining, from the second algorithm, a prediction for a second setting of the operational parameters of the micro-tooling device; andcontrolling the operation of the micro-tooling device in accordance with the second setting of the operational parameters.2. The method of claim 1 , further comprising:obtaining a state of the predefined feature from the one or more first algorithms; andselecting the second algorithm from a plurality of candidate algorithms at least partially based on the state of the predefined feature.3. The method of claim 2 , further ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. 137-. (canceled)38. A charged-particle beam apparatus , comprising:a source conversion unit configured to convert electrons from a single electron source into a plurality of beamlets, the source conversion unit comprising a plurality of paired elements, wherein each paired element comprises a first element and a second element above the first element;a first projection system configured to form a plurality of probe spots on a sample from the plurality of beamlets;a second projection system configured to focus a plurality of secondary beams generated by the plurality of probe spots on the sample; anda detection device configured to receive the plurality of secondary beams.39. The charged-particle beam apparatus of claim 38 , wherein the first elements of the plurality of paired elements form a first layer of multi-pole elements and the second elements of the plurality of paired elements form a second layer of multi-pole elements.40. The charged-particle beam apparatus of claim 39 , wherein the multi-pole elements of the first layer are aligned with the multi-pole elements of the second layer in a direction parallel to a primary optical axis of the apparatus.41. The charged-particle beam apparatus of claim 38 , wherein the first element and the second element of the plurality of paired elements are ...

Electron Beam Image Acquisition Apparatus, and Electron Beam Image Acquisition Method

An electron beam image acquisition apparatus includes a deflector to deflect an electron beam, a deflection control system to control the deflector, a measurement circuitry to measure, while moving a stage for placing thereon a substrate on which a figure pattern is formed, an edge position of a mark pattern arranged on the stage by scanning the mark pattern with an electron beam, a delay time calculation circuitry to calculate, using information on the edge position, a deflection control delay time which is a delay time to start deflection control occurring in the deflection control system, a correction circuitry to correct, using the deflection control delay time, a deflection position of the electron beam, and an image acquisition mechanism to include the deflector and acquire an image of the figure pattern at a corrected deflection position on the substrate. 1. An electron beam image acquisition apparatus comprising:a deflector configured to deflect an electron beam;a deflection control system configured to control the deflector;a measurement circuitry configured to measure, while moving a stage for placing thereon a substrate on which a figure pattern is formed, an edge position of a mark pattern arranged on the stage by scanning the mark pattern with an electron beam;a delay time calculation circuitry configured to calculate, using information on the edge position, a deflection control delay time which is a delay time to start deflection control occurring in the deflection control system;a correction circuitry configured to correct, using the deflection control delay time, a deflection position of the electron beam; andan image acquisition mechanism configured to include the deflector and acquire an image of the figure pattern at a corrected deflection position on the substrate.2. The apparatus according to claim 1 , wherein claim 1 , using multiple beams as the electron beam and using an isolated line pattern of a size smaller than a pitch between beams of ...

CHARGED PARTICLE BEAM IRRADIATION APPARATUS AND METHOD FOR REDUCING ELECTRIFICATION OF SUBSTRATE

According to one aspect of the present invention, a charged particle beam irradiation apparatus includes: a plurality of electrodes arranged in a magnetic field space of an electromagnetic lens and also arranged so as to surround a space on an outer side of a passing region of a charged particle beam; and a potential control circuit configured to control potentials of the plurality of electrodes so as to generate plasma in the space surrounded by the plurality of electrodes and so as to control movement of positive ions or electrons and negative ions generated by the plasma, wherein positive ions, electrons and negative ions, or active species are emitted from the space of the plasma. 1. A charged particle beam irradiation apparatus comprising:an emission source configured to emit a charged particle beam;an electromagnetic lens configured to refract the charged particle beam;a plurality of electrodes arranged in a magnetic field space of the electromagnetic lens and also arranged so as to surround a space on an outer side of a passing region of the charged particle beam; anda potential control circuit configured to control potentials of the plurality of electrodes so as to generate plasma in the space surrounded by the plurality of electrodes and so as to control movement of positive ions or electrons and negative ions generated by the plasma, whereinpositive ions, electrons and negative ions, or active species are emitted from the space of the plasma.2. The apparatus according to claim 1 , wherein the plasma is generated by magnetron discharge.3. The apparatus according to claim 1 , wherein the plasma is generated by Penning discharge.4. The apparatus according to claim 1 , further comprising: a supply mechanism for supplying a gas to the space of the plasma.5. The apparatus according to claim 1 , wherein as the plurality of electrodes claim 1 ,an inner electrode formed in a cylindrical shape,an outer electrode formed in a cylindrical shape and arranged so as to ...

Charged Particle Beam System and Method of Operating a Charged Particle Beam System

The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases comprise neon or a noble gas with atoms having a mass larger than neon, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole. A surface of the extractor electrode facing the tip can be made of a material having a negative secondary ion sputter rate of less than 10per incident neon ion. 1. A gas field ion source , comprising:an external housing,an internal housing within the external housing,an electrically conductive tip within the internal housing,a gas supply configured to supply a gas to the internal housing, the gas supply comprising a tube terminating within the internal housing,an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing, anda flapper valve between the internal and the external housing, the flapper valve being configured to increase a flow of gas from the internal housing to the external housing when the flapper valve is opened.2. The gas field ion source of claim 1 , wherein the gas supply is configured so that:in a first mode of operation of the gas field ion source, the gas supply supplies a first noble gas; andin a second mode of operation of operation of the gas field ion source, the gas supply supplies a second noble gas.3. The gas field ion source of claim 2 , wherein the first gas is helium claim 2 , and the second gas is neon.4. The gas field ion source of claim 1 , further comprising a vacuum pump connected to the external housing.5. The gas field ion source of claim 4 , wherein the flapper valve is configured to increase a pumping speed of the internal housing if the flapper valve is opened.6. The gas field ion source of claim 5 , wherein the gas supply is ...

Ion source using field emitter array cathode and electromagnetic confinement

An ion source for use in a radiation generator tube includes a back passive cathode electrode, a passive anode electrode downstream of the back passive cathode electrode, a magnet adjacent the anode, and a front passive cathode electrode downstream of the passive anode electrode. The front passive cathode electrode and the back passive cathode electrode define an ionization region therebetween. At least one field emitter array (FEA) cathode is configured to electrostatically discharge due to an electric field in the ion source. The back passive cathode electrode and the passive anode electrode, and the front passive cathode electrode and the passive anode electrode, have respective voltage differences therebetween, and the magnet generating a magnetic field, such that a Penning-type trap is produced to confine electrons from the electrostatic discharge to the ionization region. At least some of the electrons in the ionization region interact with an ionizable gas to create ions.

ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode. 1an ion generation chamber including an ion generator;a processing chamber in which the processing is performed and a holder to hold a substrate is disposed; a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and', 'a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions; and, 'a plurality of electrodes configured to separate the ion generation chamber from the processing chamber, and to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber, the plurality of electrodes includinga power unit configured to apply different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by the ion generator in the ion generation chamber,wherein a material of the first electrode is different from a material of the second electrode,wherein the plurality of electrodes ...

ION IMPLANTATION SYSTEM AND SOURCE BUSHING THEREOF

The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body. 1. An ion implantation system , comprising:a chamber;an ion source configured to generate an ion beam; and a tubular body comprising an inner surface, a first end, and a second end; and', 'a plurality of angled trenches disposed within the inner surface of the tubular body, wherein each of the plurality of angled trenches extends towards the second end of the tubular body., 'a bushing coupling the ion source and the chamber, wherein the bushing comprises2. The ion implantation system of claim 1 , wherein a longitudinal axis passes through midpoints associated with the first and second ends claim 1 , and wherein an acute angle between the longitudinal axis and another axis claim 1 , defined from a first midpoint of an opening of each of the plurality of angled trenches to a second midpoint of an innermost surface of the respective angled trench claim 1 , is equal to or less than about 75 degrees.3. The ion implantation system of claim 1 , wherein a separation between the second end of the tubular body and a first midpoint of an opening of each of the plurality of angled trenches is greater than that between the second end of the tubular body and a second midpoint of an innermost surface of the respective angled trench4. The ion implantation system of claim 1 , wherein the bushing further comprises an other plurality of trenches disposed within the another inner surface ...

Method and apparatus for a porous electrospray emitter

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.

Charged Particle Beam System and Method of Operating a Charged Particle Beam System

The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C. 1. A method , comprising: an external housing,', 'an internal housing within the external housing,', 'an electrically conductive tip within the internal housing,', 'a gas supply configured to supply a gas to the internal housing, the gas supply comprising a tube terminating within the internal housing, and', 'an extractor electrode having a hole configured to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing;, 'providing a gas field ion beam system, comprisingregularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature above 100a° C.; andopening a bye-pass valve of the gas supply to achieve a gas flow from the gas supply into a vacuum space outside the internal housing.2. The method of claim 1 , further comprising cooling the external housing to room temperature before cooling the internal housing claim 1 , the tube and the extractor electrode to cryogenic temperature.3. The method of claim 2 , further comprising cooling the electrically conductive tip to cryogenic temperature at a time after the internal housing claim 2 , the tube and the extractor electrode are cooled to ...

Methods and Apparatus for Determining, Using, and Indicating Ion Beam Working Properties

Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder. 1. An ion beam apparatus for preparing a sample comprising:a. an ion beam irradiating means disposed in a vacuum chamber directing a broad ion beam along a central ion beam axis;b. the broad ion beam comprising: a working portion directed toward said sample; and a monitoring portion; i. an instantaneous current of ions;', 'ii. an instantaneous flux of ions;', 'iii. an instantaneous flux of neutrals;', 'iv. a time-averaged current of ions;', 'v. a time-averaged flux of ions;', 'vi. a time-averaged flux of neutrals;', 'vii. an integrated current of ions;', 'viii. an integrated flux of ions;', 'ix. an integrated flux of neutrals;', 'x. an instantaneous energy of ions;', 'xi. a time-averaged energy of ions;', 'xii. an integrated energy of ions;', 'xiii. an instantaneous energy distribution of ions;', 'xiv. a time-averaged energy distribution of ions; and,', 'xv. an integrated energy distribution of ions;, 'c. said ion beam irradiating means being a modulating ion beam irradiating means operative to provide at least two levels of one or more ion beam characteristics selected from the list consisting ofd. said working portion characterized in that it has one or more working portion characteristics selected from said list of said ion beam ...

Systems and methods for providing an ion beam

Systems for generating a proton beam include an electromagnetic radiation beam (e.g., a laser) that is directed onto an ion-generating target by optics to form the proton beam. The ion-generating target includes a plurality of patterned features and/or a knife edge, and may comprise, for example, ice, silicon, carbon, plastic, or steel. At least one processor is configured to cause the electromagnetic radiation beam to strike the knife edge or individual ones of the plurality of patterned features. The at least one processor may also be configured to cause the electromagnetic radiation beam to scan a surface of the ion-generating target either continuously or discontinuously, for example by controlling a motor and/or adaptive mirror. Further, the at least one processor may be configured to cause the sequential scanning of the electromagnetic radiation beam over contiguous ones of the plurality of patterned features.

Ion beam irradiation apparatus and substrate processing apparatus

Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.

PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS

In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films. 169.-. (canceled)70. A partially refurbished sputtering target comprising:a target plate (i) comprising a target material and (ii) having a surface contour defining (a) a top surface and (b) a recessed region having a surface recessed below the top surface; anddisposed on the target plate adjacent the recessed region, a layer of unmelted metal powder (i) having a top surface (a) approximately coplanar with the top surface of the target plate or (b) recessed below the top surface to a depth no deeper than a depth of the surface of the recessed region, and (ii) having an interface with the plate disposed at a depth deeper than the surface of the recessed region.71. The partially refurbished sputtering target of claim 70 , wherein the top surface of the layer of unmelted metal powder is approximately coplanar with the top surface of the target plate.72. The partially refurbished sputtering target of claim 70 , wherein the top surface of the layer of unmelted metal powder is recessed below the top surface to a depth shallower than the depth of the surface of the recessed region.73. The partially refurbished sputtering target of claim 70 , wherein the top surface of the layer of unmelted metal powder is recessed below the top surface to a depth substantially equal to the depth of the surface of the recessed region.74. The partially refurbished sputtering target of claim 70 , further comprising a sputtering tool in which the target plate is disposed.75. The partially refurbished ...

METHOD AND DEVICE FOR THE SURFACE TREATMENT OF SUBSTRATES

A method for the surface treatment of a substrate surface of a substrate includes arranging the substrate surface in a process chamber, bombarding the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, and introducing a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate includes a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, and means to introduce a second component into the process chamber to bind the removed impurities. 1. A device for the surface treatment of a substrate surface of a substrate , the device comprising:a process chamber in which the substrate is arranged;an ion beam source configured to aim an ion beam generated thereby at the substrate surface and bombard the substrate surface with the ion beam to remove impurities from the substrate surface and cause a verifiable microstructural change to the substrate that is limited to a depth range of less than 10 μm, the ion beam having an ion energy <1000 eV and a first component; andmeans for introducing a second component into the process chamber to bind the removed impurities.2. The device according to claim 1 , wherein the depth range is less than 15 nm.3. The device according to claim 1 , wherein the depth range is less than 1.5 nm.4. The device according to claim 1 , wherein a temperature of the process chamber is less than 100° C.5. The device according to claim 1 , wherein a temperature of the process chamber is at room temperature.6. The device according to claim 1 , further comprising:means for verifying the microstructural change within the depth range via transmission electron microscopy, atomic force ...

ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode. 1. An ion beam processing apparatus configured to perform processing by ion beam irradiation , comprising:an ion generation chamber including an ion generator;a processing chamber in which the processing is performed and a holder to hold a substrate is disposed; a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and', 'a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions; and, 'a plurality of electrodes configured to separate the ion generation chamber from the processing chamber, and to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber, the plurality of electrodes including'}a power unit configured to apply different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by the ion generator in the ion generation chamber,wherein a material of the ...

PHYSICAL VAPOR DEPOSITION SYSTEM USING ROTATING PALLET WITH X AND Y POSITIONING

A circular PVD chamber has a plurality of sputtering targets mounted on a top wall of the chamber. A pallet in the chamber is coupled to a motor for rotating the pallet about its center axis. The pallet has a diameter less than the diameter of the circular chamber. The pallet is also shiftable in an XY direction to move the center of the pallet beneath any of the targets so all areas of a workpiece supported by the pallet can be positioned directly below any one of the targets. A scanning magnet is in back of each target and is moved, via a programmed controller, to only be above portions of the workpiece so that no sputtered material is wasted. For depositing a material onto small workpieces, a cooling backside gas volume is created between the pallet and the underside of sticky tape supporting the workpieces. 1. A physical vapor deposition device comprising:a chamber having inner walls, the chamber being configured to create a low pressure environment in the chamber while sputtering materials on a workpiece;a target positioned within the chamber, a front side of the target being directed into the chamber for sputtering material from the target onto the workpiece;a pallet within the chamber for supporting the workpiece, the pallet having a diameter that is less than a diameter of the chamber;a first motor coupled to the pallet for rotating the pallet; andan XY shifting device for shifting the pallet and workpiece in an XY plane within the chamber to enable shifting a center of the pallet with respect to a center of the chamber.2. The device of wherein the target comprises one of a plurality of targets around a top wall of the chamber claim 1 , wherein no target extends over a center of the chamber claim 1 , wherein the XY shifting device enables the center of the pallet to be directly under at least one of the targets.3. The device of wherein the XY shifting device comprises an XY stage mounting assembly that supports the first motor claim 1 , whereby XY shifting ...

Method and system for ion-assisted processing

A system for processing a substrate includes a plasma chamber to produce a plasma including reactive gas ions at a first pressure, a bias supply to supply a bias between the plasma chamber and the substrate, a plasma sheath modifier disposed between the plasma chamber and substrate, the plasma sheath modifier having an aperture configured to direct the reactive ions toward the substrate in a beam having an ion beam profile, and a process chamber enclosing the substrate, the process chamber at a second pressure different than the first pressure to define a pressure differential.

ENDPOINTING FOR FOCUSED ION BEAM PROCESSING

To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly exposed cross section. Milling is stopped when automatic analysis of an electron beam image of the newly exposed cross section shows that a pre-determined criterion is met. 1. A method of automatically processing a work piece with a charged particle beam , comprising:defining a criterion that specifies when milling is complete;directing an ion beam toward the work piece to expose a cross section;directing an electron beam toward the cross section to form an electron beam image of the cross section;automatically evaluating the electron beam image to determine if the criterion in met;if the criterion is not met, repeatedly directing the ion beam to expose a fresh cross section and directing the electron beam to form an image of the cross section, until the criterion is met.2. The method of in which automatically evaluating the electron beam image includes determining a dimension defined by features in the image.3. The method of in which automatically evaluating the electron beam image includes determining a dimension defined by features in the image includes determining when an angle between two lines is less than a specified value.4. The method of in which automatically evaluating the electron beam image includes determining a dimension defined by features in the image includes determining when a distance between two features is equal to a specified value.5. The method of in which automatically evaluating the electron beam image includes automatically finding edges in the electron beam image and determining a dimensional relationship between the edges.6. The method of in which finding edges comprises using finding edges using changes in contrast between pixels in an image.7. The method of in which finding edges comprises applying a smoothing algorithm to improve edge detection.8. The method of in which defining a ...

INDUCTIVELY-COUPLED PLASMA ION SOURCE FOR USE WITH A FOCUSED ION BEAM COLUMN WITH SELECTABLE IONS

An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another. 1. A charged particle beam system , comprising:plasma ion source;one or more gas sources for providing multiple gases to the plasma ion source to produce multiple ion species simultaneously from the plasma ion source;a mass filter to select an ion species from the multiple ion species produced by the plasma ion source; andfocusing optics to produce a focused beam of the selected ion species at a target, the beam having a submicron diameter at the target.2. The charged particle beam system of claim 1 , wherein the mass filter comprises an E×B filter.3. (canceled)4. (canceled)5. The charged particle beam system of claim 1 , wherein the one or more gas species comprises two gas species.6. The charged particle beam system of claim 1 , wherein the mass filter comprises an aberration corrected E×B mass filter.7. The charged particle beam system of claim 6 , wherein the aberration corrected E×B mass filter has multiple stages claim 6 , a first E×B filter stage and at least a second E×B filter stage.8. The charged particle beam system of claim 1 , wherein said mass filter includes at least two electrostatic pole pieces claim 1 , each having a separate electrical connection.9. The charged particle beam system of claim 1 , wherein said mass filter further comprises mechanically adjustable magnetic field distribution and entrance and exit apertures.10. The charged particle beam system of claim 9 , wherein said mass filter further comprises least two magnetic poles claim 9 , each magnetic pole having two electrical connections claim 9 , one electrical connection at each end of each magnetic pole.11. The charged particle beam system of claim 1 , in which the focusing optics focus a mass filtered ion beam to a spot size of less than 100 nm at ...

Magnetically Enhanced, Inductively coupled Plasma Source For a Focused Ion Beam System

The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Arc chamber with multiple cathodes for an ion source

An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.