Method and apparatus for correcting delicate wiring of IC device

The invention discloses a method and apparatus for correcting a device characterized in that an ion beam is extracted from an ion source having high luminance such as a liquid metal ion source or the like, the ion beam is then converged to a delicate spot by use of a charged particle optical system and apertures, a wiring portion formed on and outside of an active layer region of a device and connected to the device is located to the spot by observing the wiring portion through an SIM, the ion beam in neutralized by an electron shower so as to prevent the wiring portion from being charged electrically, the converged ion beam spot is radiated to the wiring portion to remove the wiring portion, and radiation of the ion beam is stopped while observing the ion beam by a second ion mass spectrometer which detects that the wiring portion is cut by the ion beam and the ion beam reaches an insulating layer.