Particle sources and methods for manufacturing the same

The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

Fabrication of super ion - electron source and nanoprobe by local electron bombardment

Method of fabricating super nano ion-electron source including: placing an assembly of precursor tip and metal ring around the precursor tip below the apex in a FIM chamber; applying dc current from grounded source to the metal ring to heat the ring; gradually applying high voltage to the precursor tip; wherein the metal ring is exposed to a high electric field from the tip, generating Schottky field emission of electrons from the metal ring, the applied electrical field sufficient to cause electrons to be extracted from the metal ring and accelerated to the shank with energy sufficient to dislodge atoms from the shank; and monitoring the evolution of the tip apex due to movement of dislodged atoms from the shank to the apex while adjusting the electrical field, the current or temperature of the metal ring until the apex forms a sharp nanotip with an atomic scale apex.

Liquid metal ion source and secondary ion mass spectrometric method and use thereof

A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip. 1. A gas field ion source , comprising:a gun housing,an electrically conductive gun can base attached to the gun housing,an inner tube mounted to the gun can base, the inner tube comprising an electrically isolating material,an electrically conductive tip attached to the inner tube,an outer tube mounted to the gun can base, the outer tube comprising an electrically isolating material, andan extractor electrode attached to the outer tube, the extractor electrode having an opening for the passage of ions generated in proximity to the electrically conductive tip.2. The gas field ion source of claim 1 , further comprising a gas supply comprising a terminating tube attached to the gun can base.3. The gas field ion source of claim 2 , wherein the gas supply is configured to supply a first gas in a first mode of operation of the gas field ion source claim 2 , the gas supply is configured to supply a second gas in a second mode of operation claim 2 , and the first gas is different from the second gas.4. The gas field ion source of claim 2 , further comprising a vacuum pump operatively connected to the outer housing claim 2 , wherein the vacuum pump is configured to evacuate gas out of the outer housing.5. The gas field ion source of claim 1 , further comprising a thermal conductor connected to gun can base claim 1 , wherein the thermal conductor is thermally connected to a cooling ...

ION BEAM SYSTEM

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation. 1. An ion beam system comprising: a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder ,wherein the cold transfer member has its surface covered with a heat insulating material in order to prevent condensation of the gas.2. The ion beam system according to claim 1 ,wherein the cold transfer member is a metal thin film or a braided metal wire and has a heat insulating layer adhered to the surface thereof.3. The ion beam system according to claim 1 ,wherein the cold transfer member comprises a metal and the heat insulating material comprises a fluorine resin or ceramics.4. The ion beam system according to claim 1 ,wherein the gas is a gas containing any one of neon, argon, krypton and xenon.5. The ion beam system according to claim 1 ,wherein the gas is a gas containing any one of carbon monoxide, oxygen and nitrogen.6. The ion beam system according to claim 1 ,wherein the gas supply portion supplies a gas mixture of krypton ...

Gas Field Ionization Ion Source and Ion Beam Apparatus

In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region. 115-. (canceled)16. An ion beam apparatus comprising:a gas field ionization ion source for generating an ion beam;a sample stage for holding a sample;a lens system that focuses the ion beam emitted from the gas field ionization ion source so as to be irradiated onto the sample;a deflection system that deflects the ions so as to change the irradiation position of the ion beam on the sample;a secondary particle detector for detecting secondary particles emitted from the sample;an image processing unit for forming an observation image of the sample by using the detection results of the secondary particle detector; anda control unit for controlling the lens system and the deflection system so as to adjust the irradiation position of the ion beam,wherein the gas field ionization ion source comprises:an emitter electrode having a needle-shaped apex provided with a micro-protrusion having a single atom ...

SCANNING ION MICROSCOPE AND SECONDARY PARTICLE CONTROL METHOD

The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image. 1. A scanning ion microscope comprising:an ion source;a specimen stage configured to hold a specimen;an ion optical system configured to cause ions emitted from the ion source converge on the specimen and make deflection of the converged ions to a given position on the specimen;an ion controller configured to control the ion optical system;a secondary particle detector configured to detect a secondary particle emitted from the specimen; andan image processing unit configured to form an image in which by a signal from the secondary particle detector corresponds to the deflection of the converged ions, and store the image in a storage unit and displays the image on a display unit; wherein the scanning ion microscope further comprises:a support member, which is electrically-conductive, configured to support a thin film which is irradiated with the ions, is disposed between the ion optical system and the specimen; anda potential control unit configured to control a first electric potential, which is an electric potential of the support member.2. The scanning ion microscope according to claim 1 , further comprising an electrode potential control unit configured to control a second electric potential claim 1 , which is an electric potential of an electrode that is disposed between the thin film and the specimen claim 1 , the electrode ...

Repair Apparatus

There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions. 1. A repair apparatus comprising:a gas field ion source which includes an ion generation section including a sharpened tip;a cooling unit which is configured to cool the tip;an ion beam column which is configured to form a focused ion beam by focusing ions of a gas generated in the gas field ion source;a sample stage which is configured to move while a sample to be irradiated with the focused ion beam formed by the ion beam column is placed thereon;a sample chamber which is configured to accommodate at least the sample stage therein; anda control unit which is configured to repair a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column,wherein the gas field ion source is configured to generate nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.2. The repair apparatus according to claim 1 ,wherein the tip includes a pyramid structure having an apex constituted by a single iridium atom.3. The repair apparatus according to claim 1 ,wherein the tip is constituted by an iridium single crystal with <210> orientation, and an apex portion of the tip has an apex surrounded by one {100} ...

FIELD IONIZATION SOURCE, ION BEAM APPARATUS, AND BEAM IRRADIATION METHOD

An H ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H ion can be obtained by use of a probe current within a voltage range around a second peak occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas. 1. An ion beam apparatus , comprising:{'sub': '3', 'sup': '+', 'a gas field ionization source that emits an ion beam containing a H ion;'}a beam irradiation column that includes a lens capable of focusing an ion emitted from the gas field ionization source, and a deflector capable of deflecting an ion beam;a sample stage on which a sample to be irradiated with an ion beam passing through the beam irradiation column is loaded; anda sample chamber that houses at least the sample stage,{'sub': '3', 'sup': '+', 'wherein an abundance ratio of the H ion is the highest in ion species emitted from an emitter tip of the gas field ionization source.'}2. The ion beam apparatus according to claim 1 ,{'sub': '3', 'sup': '+', 'further comprising a filter that allows an emitted H ion to penetrate based on ion mass in a selective manner.'}3. The ion beam apparatus according to claim 2 ,{'sub': '3', 'sup': '+', 'wherein the filter has a function of allowing only a H ion to penetrate in a selective manner.'}4. The ion beam apparatus according to claim 2 ,wherein the filter has a function of producing a magnetic field.5. The ion beam apparatus according to claim 1 ,further comprising a function of correcting a mask or mold for nanoimprint lithography by the ion beam.6. An ion beam apparatus claim 1 , comprising:a gas field ionization source;a beam irradiation column that is equipped with a lens capable of focusing ...

METHOD, DEVICE AND SYSTEM FOR THE TREATMENT OF BIOLOGICAL CRYOGENIC SAMPLES BY PLASMA FOCUSED ION BEAMS

The invention relates to a method, a device and a system for the treatment of biological frozen samples using plasma focused ion beams (FIB). The samples can then be used for mass spectrometry (MS), genomics, such as gene sequencing analysis or next generation sequencing (NGS) analysis, and proteomics. The present invention particularly relates to a method of treatment of at least one biological sample. This method is particularly used for high performance microscopy, proteomics analytics, sequencing, such as NGS etc. According to the present invention the method comprises the steps of providing at least one biological sample in frozen form. The milling treats at least one part of the sample by a plasma ion beam comprising at least one of an O and/or a Xe plasma. 1. A method of analyzing a biological sample , comprising:providing at least one biological sample in frozen form;{'sup': '+', 'isolating at least a target from the sample by milling the sample using a plasma ion beam comprising at least an O plasma; and'}analyzing the isolated target, wherein the analysis includes proteomic analysis and/or next-generation sequencing.2. The method of claim 1 , wherein isolating at least a target from the sample by milling the sample using a plasma ion beam includes isolating the target by sputtering away at least an unwanted part adjacent to the target using the plasma ion beam.3. The method of claim 2 , further comprising transferring the isolated target to a spectrometer for the proteomic analysis.4. The method of claim 3 , wherein the spectrometer is an orbitrap fusion mass spectrometer.5. The method of claim 2 , further comprising transferring the isolated target to a next-generation sequencing platform for the next generation sequencing.6. The method of claim 2 , further comprises obtaining an accumulated sample including a plurality of targets from one or more biological samples claim 2 , wherein analyzing the isolated target includes analyzing the accumulated sample. ...

Techniques for Optimizing Nanotips Derived from Frozen Taylor Cones

Optimization techniques are disclosed for producing sharp and stable tips/nanotips relying on liquid Taylor cones created from electrically conductive materials with high melting points. A wire substrate of such a material with a preform end in the shape of a regular or concave cone, is first melted with a focused laser beam. Under the influence of a high positive potential, a Taylor cone in a liquid/molten state is formed at that end. The cone is then quenched upon cessation of the laser power, thus freezing the Taylor cone. The tip of the frozen Taylor cone is reheated by the laser to allow its precise localized melting and shaping. Tips thus obtained yield desirable end-forms suitable as electron field emission sources for a variety of applications. In-situ regeneration of the tip is readily accomplished. These tips can also be employed as regenerable bright ion sources using field ionization/desorption of introduced chemical species. 1. A method comprising the steps of:(a) placing at least one electrically conductive material in a vacuum, said electrically conductive material chosen to be a refractory material;(b) heating said at least one electrically conductive material to at least its melting point by a first application of focused energy incident on it, said first application modulated in accordance with an application waveform;(c) applying a positive potential to said at least one electrically conductive material to form at its end a corresponding at least one liquid Taylor cone;(d) quenching said at least one liquid Taylor cone by a cessation of said focused energy to form a corresponding at least one frozen Taylor cone, said cessation modulated in accordance with a cessation waveform;(e) heating a corresponding tip of said at least one frozen Taylor cone by a second application of focused energy incident on said corresponding tip, said second application modulated in accordance with a shaping waveform; and(f) obtaining structural characteristics of said ...

Ion beam device

An ion beam device according to the present invention includes a gas field ion source including an emitter tip supported by an emitter base mount, a ionization chamber including an extraction electrode and being configured to surround the emitter tip, and a gas supply tube. A center axis line of the extraction electrode overlaps or is parallel to a center axis line of the ion irradiation light system, and a center axis line passing the emitter tip and the emitter base mount is inclinable with respect to a center axis line of the ionization chamber. Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

CHARGED PARTICLE MICROSCOPE

The ionized gas supplied to the emitter tip of a gas field ionization ion source is cooled and purified to enable supplying a reliable and stable ion beam. Impurities contained in the ionized gas destabilize the field ionization ion source. The invention is configured to include a first heat exchanger thermally connected to a part of the field ionization ion source, a cryocooler capable of cooling a second gas line and a cold head, the second gas line being connected to the first heat exchanger and circulating a refrigerant, and a second heat exchanger that cools the first and second gas lines and is connected to the cold head. 1. A charged particle microscope that has a field ionization ion source ,the microscope comprising:an emitter tip having a needle-like apex;an ionization chamber having the emitter tip inside the chamber;a first heat exchanger connected to a part of the ionization chamber via a cooling conductor,a cryocooler having a second heat exchanger,a first gas line that supplies a gas to the ionization chamber via the second heat exchanger; anda second gas line thermally connected to the first heat exchanger and the second heat exchanger.2. The charged particle microscope according to claim 1 ,wherein the second heat exchanger is thermally connected to a vacuum chamber retaining a gas molecule supplied to the first gas line, andwherein a mechanism by which a gas flow rate through the first gas line is adjusted is provided on a path between the vacuum chamber and the first gas line.3. The charged particle microscope according to claim 2 , wherein the gas running through the second gas line is partially suppliable to the ionization chamber.4. The charged particle microscope according to claim 1 , comprising:a first device mount that holds the field ionization ion source, a sample holder for holding a sample, and a lens group for converging an ion beam; andan antivibration mechanism that reduces a vibration of the device mount,wherein the cryocooler is ...

HYDROGEN GENERATOR FOR AN ION IMPLANTER

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source. 1. A terminal system for an ion implantation system , wherein the terminal system comprises:a terminal housing;an ion source assembly disposed within the terminal housing, wherein the ion source assembly is electrically isolated from the terminal housing; anda hydrogen generator disposed within the terminal housing, wherein the hydrogen generator is at the same electrical potential as the ion source assembly and electrically coupled thereto, and wherein the hydrogen generator is configured to produce hydrogen gas and supply said hydrogen gas to the ion source assembly.2. The terminal system of claim 1 , further comprising a gas box claim 1 , wherein the hydrogen generator is disposed within the gas box claim 1 , and wherein the gas box is electrically coupled to the ion source assembly.3. The terminal system of claim 2 , further comprising one or more electrical insulators claim 2 , wherein the one or more electrical insulators electrically isolate the ion source assembly and gas box from the terminal housing.4. The terminal system of ...

Liquid metal ion source and focused ion beam apparatus

A liquid metal ion source (50) includes: a reservoir (10) configured to hold an ion material (M) forming a liquid metal; a needle electrode (20); an extraction electrode (22) configured to cause an ion of the ion material to be emitted from a distal end of the needle electrode; a beam diaphragm (24), which is arranged on a downstream side of the extraction electrode, and is configured to limit a beam diameter of the ion; and a vacuum chamber (30) configured to accommodate and hold the reservoir, the needle electrode, the extraction electrode, and the beam diaphragm in vacuum, wherein the liquid metal ion source further includes an oxidizing gas introducing portion (40), and wherein the oxidizing gas introducing portion communicates to the vacuum chamber, and is configured to introduce an oxidizing gas into a periphery of the needle electrode.

AUTOMATED OPERATIONAL CONTROL OF MICRO-TOOLING DEVICES

A micro-tooling device, such as, for example, a scanning electron microscope or a focused-ion beam microscope, provides images. A first machine-learning algorithm and a second machine-learning algorithm are sequentially coupled. The first machine-learning algorithm determines a progress along a predefined workflow based on feature recognition in images associated with the workflow. The second machine-learning algorithm predicts settings of operational parameters of the micro-tooling device in accordance with the progress along the predefined workflow. 1. A method , comprising:obtaining a time series of images while using one or more first settings of operational parameters of a micro-tooling device;providing each image of the time series of the images to one or more first algorithms;obtaining, from the one or more first algorithms, a time series of one or more properties of a predefined feature included in the images;providing at least some of the images of the time series of images to a third algorithm;obtaining, from the third algorithm, at least one parameter selected from the group consisting an orientation of the predefined feature in the at least some of the images and a localization of the predefined feature in the at least some of the images;providing to a second algorithm: i) the time series of the one or more properties of the predefined feature included in the images; and ii) the at least one parameter;obtaining, from the second algorithm, a prediction for a second setting of the operational parameters of the micro-tooling device; andcontrolling the operation of the micro-tooling device in accordance with the second setting of the operational parameters.2. The method of claim 1 , further comprising:obtaining a state of the predefined feature from the one or more first algorithms; andselecting the second algorithm from a plurality of candidate algorithms at least partially based on the state of the predefined feature.3. The method of claim 2 , further ...

Charged Particle Beam System and Method of Operating a Charged Particle Beam System

The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases comprise neon or a noble gas with atoms having a mass larger than neon, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole. A surface of the extractor electrode facing the tip can be made of a material having a negative secondary ion sputter rate of less than 10per incident neon ion. 1. A gas field ion source , comprising:an external housing,an internal housing within the external housing,an electrically conductive tip within the internal housing,a gas supply configured to supply a gas to the internal housing, the gas supply comprising a tube terminating within the internal housing,an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing, anda flapper valve between the internal and the external housing, the flapper valve being configured to increase a flow of gas from the internal housing to the external housing when the flapper valve is opened.2. The gas field ion source of claim 1 , wherein the gas supply is configured so that:in a first mode of operation of the gas field ion source, the gas supply supplies a first noble gas; andin a second mode of operation of operation of the gas field ion source, the gas supply supplies a second noble gas.3. The gas field ion source of claim 2 , wherein the first gas is helium claim 2 , and the second gas is neon.4. The gas field ion source of claim 1 , further comprising a vacuum pump connected to the external housing.5. The gas field ion source of claim 4 , wherein the flapper valve is configured to increase a pumping speed of the internal housing if the flapper valve is opened.6. The gas field ion source of claim 5 , wherein the gas supply is ...

Method and apparatus for a porous electrospray emitter

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.

Charged Particle Beam System and Method of Operating a Charged Particle Beam System

The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C. 1. A method , comprising: an external housing,', 'an internal housing within the external housing,', 'an electrically conductive tip within the internal housing,', 'a gas supply configured to supply a gas to the internal housing, the gas supply comprising a tube terminating within the internal housing, and', 'an extractor electrode having a hole configured to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing;, 'providing a gas field ion beam system, comprisingregularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature above 100a° C.; andopening a bye-pass valve of the gas supply to achieve a gas flow from the gas supply into a vacuum space outside the internal housing.2. The method of claim 1 , further comprising cooling the external housing to room temperature before cooling the internal housing claim 1 , the tube and the extractor electrode to cryogenic temperature.3. The method of claim 2 , further comprising cooling the electrically conductive tip to cryogenic temperature at a time after the internal housing claim 2 , the tube and the extractor electrode are cooled to ...

Device For Generating a Source Current of Charge Carriers

A device for generating a source current of charge carriers and a method for stabilizing a source current of charge carriers are disclosed. In an embodiment the device includes at least one field emission element configured to emit charge carriers, which lead to an emission current in the field emission element, at least one extraction electrode configured to apply an extraction voltage in order to extract the charge carriers from the field emission element, wherein a first part of the extracted charge carriers contributes to the source current, and a second part of the extracted charge carriers impinges on the extraction electrode and leads to an extraction current in the extraction electrode and a control device configured to reduce fluctuations of a controlled variable Q which is a characteristic for the source current, wherein Q is a function of a difference between the emission current and the extraction current.

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. (canceled)2. A system for producing ions comprising:a source of ions;a first porous material in contact with the source of ions;a connecting member comprising a second porous material, wherein the connecting member is operatively coupled to the first porous material; andan array of emitters comprising a third porous material, wherein the array is operatively coupled to the connecting member, wherein the source of ions is transported through capillarity from the first porous material to the array of emitters through the connecting member.3. The system of claim 2 , wherein the first porous material is a distal electrode.4. The system of claim 2 , wherein a pore size of the third porous material is less than a pore size of the second porous material claim 2 , and wherein a pore size of the second porous material is less than a pore size of the first porous material.5. The system of claim 4 , wherein a pore size of an emitter body of the array of emitters decreases from a base to a tip of the emitter body.6. The system of claim 2 , wherein the source of ions comprises an ionic liquid and/or a room-temperature molten salt.7. The system of claim 2 , further comprising a first electrode electrically connected to the array of emitters through the source of ions.8. The system of claim 7 , further comprising a second electrode positioned downstream relative to the array of emitters and the first electrode.9. The system of claim 8 , wherein when a voltage potential is applied to the source of ions claim 8 , ...

ION BEAM GENERATING DEVICE INCLUDING LIQUID METAL ION SOURCE AND METHOD OF MANUFACTURING THE SAME

An ion beam generating device includes a liquid metal ion source configured to melt metal and emit an ion beam, and an extractor disposed under the liquid metal ion source and configured to extract the ion beam emitted from the liquid metal ion source. The liquid metal ion source includes a storage configured to accommodate the metal, an emitter configured to receive the metal from the storage and emit the ion beam, and a heater configured to heat the emitter or the storage. The heater is configured to directly heat the metal accommodated in the storage to melt the metal into a liquid state, and an amount of the ion beam to be extracted is controlled by a voltage difference that changes based on a distance between the emitter and the extractor. 1. An ion beam generating device , comprising:a liquid metal ion source configured to melt metal and emit an ion beam; and wherein the liquid metal ion source comprises:', 'a storage configured to accommodate the metal;', 'an emitter configured to receive the metal from the storage and emit the ion beam; and', wherein the heater is configured to directly heat the metal accommodated in the storage to melt the metal into a liquid state, and', 'an amount of the ion beam to be extracted is controlled by a voltage difference that changes based on a distance between the emitter and the extractor., 'a heater configured to heat the emitter or the storage,'}], 'an extractor disposed under the liquid metal ion source and configured to extract the ion beam emitted from the liquid metal ion source,'}2. The ion beam generating device of claim 1 , wherein the emitter and the storage are formed of tungsten (W) claim 1 ,a diameter of the emitter and the storage is formed to be between 200 micrometers (μm) and 500 μm,one end of the emitter is formed in a shape having a pointed portion, andthe storage is formed in a shape of a tube, and extends in a direction from an upper side of the emitter towards a lower side of the emitter while ...

Method and apparatus for a porous electrospray emitter

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.

Method, device and system for the treatment of biological cryogenic samples by plasma focused ion beams

The invention relates to a method, a device and a system for the treatment of biological frozen samples using plasma focused ion beams (FIB). The samples can then be used for mass spectrometry (MS), genomics, such as gene sequencing analysis or next generation sequencing (NGS) analysis, and proteomics. The present invention particularly relates to a method of treatment of at least one biological sample. This method is particularly used for high performance microscopy, proteomics analytics, sequencing, such as NGS etc. According to the present invention the method comprises the steps of providing at least one biological sample in frozen form. The milling treats at least one part of the sample by a plasma ion beam comprising at least one of an O + and/or a Xe + plasma.

FOCUSED ION BEAM APPARATUS

Disclosed herein is a focused ion beam apparatus equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously emitting ions from the gas field ion source having high luminance, along an optical axis of an ion-optical system for a long period of time. In the focused ion beam apparatus equipped with a gas field ion source having an emitter for emitting ions, the emitter has a shape in which sharpened iridium is fixed to dissimilar wire. 1. A focused ion beam apparatus at least equipped with a gas field ion source having an emitter for emitting ions , wherein the emitter has a shape in which sharpened iridium is fixed to dissimilar wire.2. The focused ion beam apparatus as set forth in claim 1 , wherein the dissimilar metal wire is made of any one of tungsten claim 1 , molybdenum claim 1 , tantalum claim 1 , and niobium.3. The focused ion beam apparatus as set forth in claim 1 , wherein the emitter has a pyramidal structure of which an apex is composed of one iridium atom in a <210> orientation surrounded by one {100} facet and two {111} facets claim 1 , at a sharpened free end.4. The focused ion beam apparatus as set forth in claim 2 , wherein the emitter has a pyramidal structure of which an apex is composed of one iridium atom in a <210> orientation surrounded by one {100} facet and two {111} facets claim 2 , at a sharpened free end. CROSS REFERENCE TO RELATED APPLICATION(S)This application claims the benefit of Japanese Patent Application No. JP 2015-031063, filed Feb. 3, 2015, which is hereby incorporated by reference in its entirety into this application.1. Technical FieldThe present invention relates to a focused ion beam apparatus equipped with a gas field ion source.2. Description of the Related ArtA sharpened needle-shaped electrode for generating ions in a gas field ion source (GFIS) of a focused ion beam (FIB) apparatus is called a tip.In focused ion beam apparatuses equipped with a gas field ...

Ion Beam Device and Emitter Tip Adjustment Method

The objective of the present invention is to provide an ion beam device capable of forming a nanopyramid stably having one atom at the front end of an emitter tip even when the cooling temperature is lowered in order to observe a sample with a high signal-to-noise ratio. In the present invention, the ion beam device, wherein an ion beam generated from an electric field-ionized gas ion source is irradiated onto the sample to observe or process the sample, holds the temperature of the emitter tip at a second temperature higher than a first temperature for generating the ion beam and lower than room temperature, sets the extraction voltage to a second voltage higher than the first voltage used when generating the ion beam, and causes field evaporation of atoms at the front end of the emitter tip, when forming the nanopyramid having one atom at the front end of the emitter tip. 1. An emitter tip adjustment method , which is a method for adjusting an emitter tip in a gas field ionization ion source , which includes an emitter tip that functions as an anode , an extraction electrode that functions as a cathode , and a gas supply port for supplying a gas around the emitter tip , and generates an ion beam by ionization of the gas at a first pressure by setting an extraction voltage to be applied between the emitter tip and the extraction electrode to a first voltage in a state where the temperature of the emitter tip is set to a first temperature , whereinthe atoms at the apex of the emitter tip is reduced to one by a field evaporation step in which the atoms at the apex of the emitter tip are field evaporated by setting the extraction voltage to a second voltage which is higher than the first voltage while maintaining the temperature of the emitter tip at a second temperature which is higher than the first temperature and lower than room temperature.2. The emitter tip adjustment method according to claim 1 , wherein an observation step in which an FIM image of the apex of ...

FOCUSED ION BEAM APPARATUS

The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion source; a focusing lens; a first deflector; a first aperture; an objective lens focusing the ion beam passing through the first deflector; and a sample stage. A signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, and a scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other. 1. A focused ion beam apparatus , comprising:a vacuum container;an emitter tip disposed in the vacuum container and having a pointed front end;a gas field ion source producing gas ions at the front end of the emitter tip;a focusing lens focusing an ion beam emitted from the gas field ion source;a first deflector deflecting the ion beam passing through the focusing lens;a first aperture disposed between the focusing lens and the first deflector and limiting the ion beam passing through the focusing lens;an objective lens focusing the ion beam passing through the first deflector; anda sample stage for placing an examination sample thereon,wherein a signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, anda scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other.2. The apparatus of claim 1 , wherein the signal generator is disposed on the sample stage to be able to be inserted and removed with respect to a radiation axis of the ion beam.3. ...

ION BEAM GENERATOR WITH NANOWIRES

An ion beam generator includes an emission electrode, an extraction electrode, and an electricity generator. The emission electrode includes a substrate and a plurality of nanowires extending away from the substrate, substantially towards the extraction electrode, the nanowires having a length of 50 nm to 50 μm. The emission electrode has a source of ions including a sheet of ionic liquid formed on the substrate and at least partially immersing the nanowires. The nanowires and the substrate are electrically insulating or semiconducting, and the electricity generator is connected to the sheet of ionic liquid. The emission electrode is thus capable of sending ion beams from the ionic liquid to the extraction electrode. 1. An ion beam generator , comprising:an emission electrode comprising a first main surface;an extraction electrode comprising a second main surface arranged substantially facing the first main surface, said first and second main surfaces being separated by a gap; andan electrical generator capable of applying a potential difference between the emission electrode and the extraction electrode;the emission electrode comprising an ionic liquid ion source, said emission electrode thus being capable of sending at least one beam of ions originating from said ionic liquid to the extraction electrode;the emission electrode having a substrate and a plurality of nanowires extending from said substrate, substantially in the direction of the extraction electrode, each of said nanowires having a length comprised between 50 nm and 50 μm, preferentially comprised between 100 nm and 1 μm, each of said nanowires having a diameter comprised between 50 nm and 200 nm, a minimum distance between two adjacent nanowires on the substrate being comprised between 50 nm and 200 nm and preferentially equal to approximately 150 nm;the ionic liquid ion source having a layer of ionic liquid formed on the substrate and at least partially immersing the nanowires, said layer of ionic ...

Ion Beam Device

In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit. 1. An ion beam apparatus comprising:a vacuum chamber;a gas field ion source that is installed in the vacuum chamber and has an emitter tip;an extraction electrode that is disposed to face the emitter tip;a gas supply means for supplying a gas to the emitter tip;a focusing lens that focuses an ion beam emitted from the emitter tip;a deflector that deflects the ion beam that has passed through the focusing lens; anda secondary particle detector that irradiates a sample with the ion beam to detect secondary particles emitted from the sample,wherein the gas supply means supplies a hydrogen gas that has passed through a hydrogen selective transmission membrane and a neon gas to the emitter tip at the same time.2. An ion beam apparatus comprising:a vacuum chamber;a gas field ion source that is installed in the vacuum chamber and has an emitter tip;an extraction electrode that is disposed to face the emitter tip;a gas supply means for supplying a gas to the emitter tip;a focusing lens that focuses an ion beam emitted from the emitter tip;a deflector that deflects the ion beam that has passed through the focusing lens; anda secondary particle detector that irradiates a sample with the ion beam to detect secondary particles emitted from the sample,wherein the gas supply means supplies a hydrogen gas that has passed through a hydrogen selective transmission membrane and nitrogen gas at the same time to the emitter tip.3. The ion beam apparatus according to claim 1 , wherein the gas supply means ...

ION BEAM DEVICE AND CLEANING METHOD FOR GAS FIELD ION SOURCE

An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

Repair Apparatus

There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions. 15-. (canceled)6. A repair apparatus comprising:a gas field ion source which includes an ion generation section including a sharpened tip;a cooling unit which is configured to cool the tip;an ion beam column which is configured to form a focused ion beam by focusing ions of a gas generated in the gas field ion source;a sample stage which is configured to move while a sample to be irradiated with the focused ion beam is placed thereon, the sample including a mask or a mold for nano-imprint lithography;a sample chamber which is configured to accommodate at least the sample stage therein; anda control unit which is configured to repair the sample with the focused ion beam formed by the ion beam column,wherein the control unit is configured to change a type of the gas to be used for irradiating the sample with the focused ion beam in accordance with a type of the sample.7. The repair apparatus according to claim 6 , wherein the control unit is configured to change the type of the gas to be used for irradiating the sample with the focused ion beam in accordance with a type of observation or processing to be performed on the sample.8. The repair apparatus according to claim 6 , wherein the tip is configured by an ...

Ion Beam Apparatus

According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including H ions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H. 1. An ion beam apparatus , comprising:an emitter tip having a needle-like point;an extraction electrode having an opening which is disposed to be opposite to the emitter tip and is at a position separated from the emitter tip;a gas supply source supplying gas;a gas supply pipe supplying the gas supplied from the gas supply source to the vicinity of the emitter tip; anda voltage applying portion performing irradiation with an ion beam from the emitter tip by applying a voltage between the emitter tip and the extraction electrode,{'sub': 3', '3, 'sup': +', '+, 'wherein the voltage applying portion switches ion beam types by switching between an operation mode of applying a first voltage with which irradiation with the ion beam most including H ion is performed and an operation mode of applying a second voltage with which irradiation with the ion beam most including an ion heavier than H is performed.'}2. The ion beam apparatus according to claim 1 , wherein the gas supply source supplies claim 1 , while supplying a first type of gas claim 1 , a second type of gas different from the first type of gas claim 1 , andthe ion beam apparatus further comprising:a gas mixer storing the first type of gas and the second type of gas and disposed between the gas supply source and the gas supply pipe; anda mixing ratio controller controlling a gas mixing ratio in the gas mixer by adjusting a flow rate of the first type of gas and a flow rate of the second type of gas.3. The ion beam apparatus according to claim 1 , wherein the point of the emitter tip is terminated with three or less atoms.4. The ion beam apparatus according to claim 1 , wherein the gas supply source supplies hydrogen gas and argon gas ...

LIQUID METAL ION SOURCE

An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal. 1. An ion source configured to form an ion beam , the ion source comprising:an arc chamber generally enclosing an arc chamber environment;a reservoir apparatus configured to provide a liquid metal to the arc chamber environment; anda biasing power supply configured to electrically bias the reservoir apparatus with respect to the arc chamber.2. The ion source of claim 1 , wherein the reservoir apparatus comprises a cup having a recess configured to generally contain the liquid metal therein.3. The ion source of claim 2 , wherein the cup is configured to generally contain the liquid metal therein by gravity.4. The ion source of claim 2 , wherein the reservoir apparatus further comprises a cap claim 2 , wherein the cap is in selective engagement with the cup and generally encloses a top portion of the reservoir apparatus claim 2 , therein defining a reservoir environment associated with the liquid metal.5. The ion source of claim 4 , wherein the liquid metal resides in the reservoir environment claim 4 , and wherein the reservoir apparatus is further configured to selectively evaporate at ...

METHOD OF MANUFACTURING EMITTER, EMITTER, AND FOCUSED ION BEAM APPARATUS

A method of manufacturing an emitter is disclosed. The method enables a crystal structure of the tip of the front end of the emitter to return to its original state with high reproducibility by rearranging atoms in a treatment, and enables a long lasting emitter to be attained by suppressing extraction voltage rise after the treatment. As a method of manufacturing an emitter having a sharpened needle-shape, the method includes: performing an electropolishing process for the front end of an emitter material having conductivity to taper toward the front end; and performing an etching to make the number of atoms constituting the tip of the front end be a predetermined number or less by further sharpening the front end through an electric field-induced gas etching having constantly applied voltage, while observing the crystal structure of the front end, by a field ion microscope, in a sharp portion having the front end at its apex. 1. A method of manufacturing an emitter that has a sharpened needle-shape , the method comprising:an electropolishing process electrolytically polishing a front end portion of a conductive emitter material to taper towards the front end; andan etching process further sharpening the front end by an electric field-induced gas etching processing in a state maintaining an applied voltage constant while observing, through a field ion microscope, a crystal structure of the front end at a sharp portion with to the front end portion as an apex to make a number of atoms constituting a tip of the front end fewer than or equal to a predetermined number.2. The method of manufacturing an emitter of claim 1 , further comprising:a first etching process performing etching processing, between the electropolishing process and the etching process, by irradiating the processed part of the emitter material with a focused ion beam to form a sharp portion with a front end as the apex.3. The method of manufacturing an emitter of claim 1 , wherein tungsten is used as ...

ION SOURCES AND METHODS FOR GENERATING ION BEAMS WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTIONS OVER LARGE TREATMENT AREAS

The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space. 1. An ion source comprising:a discharge chamber with a discharge space adapted to contain a working gas, the discharge chamber including a closed end, an open end, and a tubular sidewall extended between the closed end and the open end;an antenna adapted to generate a plasma from the working gas inside the discharge space; anda first electromagnet disposed at an outer periphery of the tubular sidewall of the discharge chamber for changing a distribution of the plasma inside the discharge space, wherein the first electromagnet is disposed and is adapted to primarily change the plasma distribution in a peripheral region of the discharge space.2. The ion source of claim 1 , further comprising:a second electromagnet disposed within the closed end of the discharge chamber and is adapted to primarily change the plasma distribution in a central region of the discharge space, wherein the second electromagnet includes a second magnetic flux concentrator including a second coil and one or more pole pieces adapted to shape a magnetic field generated by the second coil and concentrate the magnetic field generated by the second coil in a central region of the discharge space proximate to a center axis of the ion source between the closed end and the open end of the discharge chamber.3. The ion source of claim 1 , wherein the first electromagnet includes a first magnetic flux concentrator including a first coil and one or more pole pieces adapted to shape a magnetic field generated by the first coil and concentrate it in a peripheral region of the discharge space proximate to the tubular sidewall and the open end of the discharge ...

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. (canceled)2. A method of forming an electrospray emitter comprising:pouring a gel solution into a mold shaped to form one or more emitter bodies with a base and a tip; anddrying the gel solution in the mold to form the one or more emitter bodies at least partially from a porous material.3. The method of claim 2 , wherein the gel solution is a sol gel solution.4. The method of claim 3 , wherein the sol gel solution includes a solvent claim 3 , an acidic aluminum salt claim 3 , a polymer claim 3 , and a proton scavenger.5. The method of claim 3 , further comprising mixing aluminum chloride hexahydrate claim 3 , polyethylene oxide claim 3 , water claim 3 , ethanol claim 3 , and propylene oxide to form the sol gel solution.6. The method of claim 2 , wherein the porous material is a porous xerogel.7. The method of claim 2 , wherein the porous material is a ceramic.8. The method of claim 2 , wherein the porous material is alumina.9. The method of claim 2 , wherein a pore size of the one or more emitter bodies decreases from the base to the tip of the one or more emitter bodies.10. The method of claim 2 , wherein pores of the porous material have a diameter between or equal to 3 μm and 5 μm.11. The method of claim 2 , wherein a radius of curvature of the tip of the one or more emitter bodies is between or equal to 1 μm and 20 μm.12. A method of forming an electrospray emitter comprising:pouring a slurry including ground porous material into a mold shaped to form one or more emitter bodies with a base and ...

Method for operating a particle beam generator for a particle beam device and particle beam device comprising a particle beam generator

A method for operating a particle beam generator for a particle beam device, and a particle beam device for carrying out this method, are provided. An extractor voltage may be set to an extractor value using a first variable voltage supply unit. An emission current of the particle beam generator may be measured. When the emission current of the particle beam generator decreases, a suppressor voltage applied to a suppressor electrode may be adjusted using a second variable voltage supply unit such that a specific emission current of the particle beam generator is reached or maintained. When the emission current of the particle beam generator increases, the extractor voltage applied to the extractor electrode may be adjusted using the first variable voltage supply unit such that the specific emission current of the particle beam generator is reached or maintained.

ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD

Provided is an ion implantation method. An ion implantation method according to an embodiment of the inventive concept may include providing a host material and a target into a chamber, the target comprising a first material; irradiating the target with a laser to generate an ion beam; and irradiating the host material with the ion beam to dope the host material with the first material, wherein while the host material is irradiated with the ion beam, the host material is rotated. 1. An ion implantation method comprising:providing a host material and a target into a chamber, the target comprising a first material;irradiating the target with a laser to generate an ion beam; andirradiating the host material with the ion beam to dope the host material with the first material, whereinwhile the host material is irradiated with the ion beam, the host material is rotated.2. The ion implantation method of claim 1 , wherein the ion beam comprises first particles and second particles having energy at least about 10 MeV higher than the first particles.3. The ion implantation method of claim 1 , whereinthe ion beam has a propagation direction parallel to a first direction, andthe host material rotates around a rotation axis parallel to a second direction crossing the first direction.4. The ion implantation method of claim 1 , wherein a distance between the host material and the target is maintained while the host material rotates.5. The ion implantation method of claim 1 , wherein the host material comprises a portion having a cylindrical shape.6. The ion implantation method of claim 1 , wherein the target comprises:a first surface on which the laser is collimated; anda second surface facing the first surface, andthe ion beam propagates from the second surface in a direction away from the target.7. The ion implantation method of claim 1 , comprising irradiating a surface of the target with inert gas ions before irradiating the target with the laser.8. The ion implantation method ...

Systems and methods for a gas field ionization source

In one aspect the invention provides a gas field ion source assembly that includes an ion source in connection with an optical column such that an ion beam generated at the ion source travels through the optical column. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the methods provide for manufacturing, maintaining and enhancing the performance of a gas field ion source including sharpening the tip of the ion source in situ.

Systems and methods for a gas field ion microscope

In one aspect the invention provides a gas field ion microscope that includes an ion source in connection with an optical column, such that an ion beam generated at the ion source travels through the optical column and impinges on a sample. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the invention provides methods for using the ion microscope to analyze samples and enhancing the performance of a gas field ion source.

Ion sources, systems and methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Ion Sources, Systems, and Methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Focused ion beam device

Ion Sources, Systems, and Methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Ion sources, systems and methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Ion source

Ion sources, systems and methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Field ionization type ion source

Ion beam generator

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Electric field ionization type ion source

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Electric field ionization type ion source

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Ion beam generator

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Ion beam device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Ion beam apparatus and sample observation method

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion beam generating system

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source, system and method

公开了离子源、系统和方法。

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion Sources, Systems, and Methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source systems

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion sources, systems and methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion sources, systems and methods

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed.

Ion sources, systems and methods

公开了离子源、系统和方法。

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Systems for ion beam generation

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion source, system and method

The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Methods for processing a sample

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion Sources, Systems, and Methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Ion microscope, ion source systems

Ion source, system and method

本申请公开了一种离子源、系统和方法。该系统包括：气体场离子源，能够与气体相互作用从而产生与样品相互作用的离子束，从而引起二次离子离开所述样品；至少一探测器，被配置使得在使用期间，所述至少一探测器可以探测至少一些所述二次离子；电子处理器，电连接至所述至少一探测器，使得在使用期间，所述电子处理器可以根据所述被探测的二次离子而处理信息，以便确定所述样品的信息；其中所述离子束在所述样品的表面具有10nm或更小的尺寸的斑点尺寸。

Ion Sources, Systems, and Methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Ion Sources, Systems, and Methods

이온 소스, 시스템 및 방법이 개시된다. Ion sources, systems, and methods are disclosed. 이온 소스, 이차 전자, 광자, 원자, 가스 필드 이온 현미경, FOV, 재료 정보, 결정 정보, 지형 정보 Ion source, secondary electron, photon, atom, gas field ion microscope, FOV, material information, crystal information, topographic information

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Systems for sample analysis