ОТКЛОНЯЮЩАЯ ПЛАСТИНА И ОТКЛОНЯЮЩЕЕ УСТРОЙСТВО ДЛЯ ОТКЛОНЕНИЯ ЗАРЯЖЕННЫХ ЧАСТИЦ

Изобретение относится к области ускорительной техники. Отклоняющее устройство (130) для отклонения заряженных частиц выполнено для отклонения движущейся в третьем пространственном направлении (103) заряженной частицы во втором пространственном направлении (102). Отклоняющее устройство (130) имеет первую отклоняющую пластину (210) и вторую отклоняющую пластину (220), при этом первая отклоняющая пластина (210) и вторая отклоняющая пластина (220) имеют не плоскую форму, изогнуты вокруг ориентированной в первом пространственном направлении (101) оси, вторая отклоняющая пластина (220) расположена зеркально относительно первой отклоняющей пластины (210), причем первое, второе и третье пространственные направления перпендикулярны относительно друг друга. Технический результат - избирательное отклонение отдельных частиц или пакетов частиц из луча заряженных частиц. 5 з.п. ф-лы, 7 ил.

Vorrichtung zum Beaufschlagen von Schüttgut mit beschleunigten Elektronen

Die Erfindung betrifft eine Vorrichtung, umfassend mindestens einen Elektronenstrahlerzeuger (301) zum Generieren von beschleunigten Elektronen, mit denen Schüttgutpartikel (303) während des freien Falls beaufschlagbar sind, wobei der Elektronenstrahlerzeuger (301) ringförmig ausgebildet ist, bei dem die von einer ringförmigen Kathode emittierten und beschleunigten Elektronen aus einem Elektronenaustrittsfenster in Richtung Ringachse austreten; wobei der ringförmige Elektronenstrahlerzeuger (301) derart angeordnet ist, dass dessen Ringachse senkrecht oder mit einem Winkel von bis zu 45° abweichend von der Senkrechten ausgerichtet ist und wobei oberhalb des ringförmigen Elektronenstrahlerzeugers eine Einrichtung zum Vereinzeln von Schüttgutpartikeln angeordnet ist, deren Bodenwandung (304) mindestens eine Öffnung aufweist, aus der Schüttgutpartikel (303) heraus- und von dort durch den vom Elektronenstrahlerzeuger (301) geformten Ring hindurchfallen.

Teilchenoptische Anordnung mit teilchenoptischer Komponente

PROJECTION LENS ARRANGEMENT

INVESTIGATION PROCEDURE AND SYSTEM FOR CHARGED PARTICLES

METHOD AND APPARATUS FOR NEUTRAL BEAM PROCESSING BASED ON GAS CLUSTER ION BEAM TECHNOLOGY

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

ION PLASMA ELECTRON EMITTERS FOR A MELTING FURNACE

ЭЛЕКТРОННАЯ ПУШКА

Электронная пушка относится к электронной технике. Электронная пушка включает: первичный термоэлектронный источник, вторичный термоэлектронный источник и фокусирующий электрод, размещенные в первом корпусе, который включает один или несколько опорных элементов, которые присоединены регулированным способом к опоре корпуса, который связан с первой платформой; анод и одну или несколько фокусирующих обмоток, которые размещены внутри второго корпуса, который включает один или несколько изолирующих элементов, которые соединены регулированным способом с первой платформой; и одну или несколько отклоняющих обмоток, которые размещены внутри третьего корпуса, соединенного со вторым корпусом и расположенного напротив вышеупомянутого первого корпуса. За счет конструкции заявленной электронной пушки достигается повышения ее эксплуатационного ресурса и уменьшения ее размера.

Ion implantation system with beam angle control in drift and deceleration modes

Deflection plate and deflection device for deflecting charged particles

A deflection plate having a non-planar shape, for deflecting charged particles is provided. An associated method is also provided.

Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby

A method of treating a surface of a silicon substrate forms an accelerated gas cluster ion beam of carbon atoms, promotes fragmentation and/or dissociation of gas cluster ions in the beam, removes charged particles from the beam to form a neutral beam, and treats a portion of a surface of the silicon substrate by irradiating it with the neutral beam. A silicon substrate surface layer of SiCX (0.05 Подробнее

IC TOP/BOTTOM SURFACES COUPLED TO TEST, SCAN, AND COMPARATOR CIRCUITRY

A test control port (TCP) includes a state machine SM, an instruction register IR, data registers DRs, a gating circuit and a TDO MX. The SM inputs TCI signals and outputs control signals to the IR and to the DR. During instruction or data scans, the IR or DRs are enabled to input data from TDI and output data to the TDO MX and the top surface TDO signal. The bottom surface TCI inputs may be coupled to the top surface TCO signals via the gating circuit. The top surface TDI signal may be coupled to the bottom surface TDO signal via TDO MX. This allows concatenating or daisy-chaining the IR and DR of a TCP of a lower die with an IR and DR of a TCP of a die stacked on top of the lower die.

Device and method for selecting an emission area of an emission pattern

走査電子顕微鏡

CHARGED BEAM EXPOSING DEVICE

PURPOSE: To automatically correct the movement of beam position originated in the change of beam measurements, to improve the patterning accuracy and to enhance the economic efficiency of the titled device by a method wherein the amount of deviation both in the charged beam measurements and in beam position are calculated. CONSTITUTION: A rectangular-shaped beam 57 is scanned on fine grains 56, the reflected electron thereof is converted to an electric signal using a detector 50, said signal is amplified by an amplifier 5 and inputted to a waveform memory arithmetic circuit 52, thereby enabling to obtain a reflected electron strength distribution corresponding to the position and the measurements of the beam. The configuration and the position of the beam can be measured by controlling the starting position and the direction of the scanning beam and by detecting the reflection electron strength distribution. Also, an auxiliary signal generating circuit 22 consisting of a simple resistance ...

DEFECT INSPECTION DEVICE AND CHARGED PARTICLE BEAM DEVICE

PROBLEM TO BE SOLVED: To provide a charged particle beam device having a little degradation of resolution even in image shifting beyond ±75 μm and a defect inspection device having a CAD navigation function interlocking with image shifting function, in a defect inspection device combining a plurality of probes measuring electrical property of samples including minute circuit wiring patterns with a charged particle ray device. SOLUTION: In order to communicate between an image processing means which performs image processing of charged particle beam images and a memory means which stored information about circuit wiring patterns, a means using a coordinates transforming image shift movement into sample stage movement is introduced into CAD navigation function. Thus, device user's usability is improved remarkably. COPYRIGHT: (C)2006,JPO&NCIPI ...

СПОСОБ И УСТРОЙСТВО ОБРАБОТКИ НЕЙТРАЛЬНЫМ ПУЧКОМ, ОСНОВАННЫЕ НА ТЕХНОЛОГИИ ПУЧКА ГАЗОВЫХ КЛАСТЕРНЫХ ИОНОВ

Изобретение относится к области обработки материалов нейтральным пучком Способ обработки поверхности заготовки содержит этапы, на которых обеспечивают камеру пониженного давления; формируют пучок газовых кластерных ионов, содержащий газовые кластерные ионы внутри данной камеры пониженного давления; ускоряют газовые кластерные ионы, чтобы сформировать пучок ускоренных газовых кластерных ионов вдоль траектории пучка внутри камеры пониженного давления; стимулируют фрагментацию и/или диссоциацию, по меньшей мере, части ускоренных газовых кластерных ионов вдоль траектории пучка посредством увеличения интервала скоростей ионов в пучке ускоренных газовых кластерных ионов; удаляют заряженные частицы из траектории пучка, чтобы сформировать ускоренный нейтральный пучок вдоль траектории пучка в камере пониженного давления; удерживают заготовку на траектории пучка; и обрабатывают, по меньшей мере, часть поверхности заготовки путем ее облучения ускоренным нейтральным пучком. Технический результат - ...

УСТРОЙСТВО ДЛЯ ВОЗДЕЙСТВИЯ НА СЫПУЧИЙ МАТЕРИАЛ УСКОРЕННЫМИ ЭЛЕКТРОНАМИ

Изобретение относится к устройству для обработки сыпучего материала ускоренными электронами. Устройство включает электронно-лучевой генератор для генерации ускоренных электронов, воздействию которых подвергаются частицы сыпучего материала во время свободного падения, при этом электронно-лучевой генератор выполнен кольцеобразным и имеет первый катод и первый анод, между которыми посредством первого подаваемого электрического напряжения, которое предоставляется первым устройством электроснабжения, в вакуумируемой камере создается плазма тлеющего разряда, а также второй катод и второй анод, между которыми посредством второго устройства электроснабжения включается второе электрическое напряжение, причем эмитированные кольцевым вторым катодом и ускоренные электроны выходят из окна для выхода электронов в направлении оси кольца. При этом кольцевой электронно-лучевой генератор расположен таким образом, что ось его кольца ориентирована вертикально или отклоняясь от вертикали на угол до 45°. Над ...

УСТРОЙСТВО С МНОЖЕСТВЕННЫМИ ЭЛЕМЕНТАРНЫМИ ПУЧКАМИ ЗАРЯЖЕННЫХ ЧАСТИЦ

... 1. Способ влияния на и/или управления траекторией одного или более элементарных пучков заряженных частиц в устройстве с множественными элементарными пучками заряженных частиц, при этом указанное устройство содержит манипуляторное устройство для манипуляции одним или более пучками заряженных частиц из множества элементарных пучков заряженных частиц в устройстве с множественными элементарными пучками заряженных частиц, при этом манипуляторное устройство содержит:плоскую подложку, содержащую решетку со сквозными отверстиями в плоскости подложки, причем каждое из этих сквозных отверстий скомпоновано для прохождения по меньшей мере одного элементарного пучка заряженных частиц через него, при этом каждое из сквозных отверстий обеспечено одним или более электродами, скомпонованными вокруг сквозного отверстия, при этом один или более электродов скомпонованы в и/или на указанной подложке, иэлектронную схему управления для предоставления управляющих сигналов одному или более электродам каждого сквозного ...

Electron microscope for IC inspection

The microscope has an electron gun (2), a sample holder (6) and a deflection coil (4) for directing the electron beam onto the surface of the inspected IC supported by the sample holder. A regulator (14) provides a difference signal, representing the difference between a pair of signals provided by oscillation sensors (11, 12) respectively detecting the oscillation of the electron gun and the oscillation of the sample holder and superimposed on the signal supplied to the deflection coil.

APPARATUS FOR SUBJECTING BULK MATERIAL TO THE ACTION OF ACCELERATED ELECTRONS

Plasma generating apparatus, deposition apparatus and deposition method

The invention relates to a plasma generating apparatus, deposition apparatus and deposition method, which is indicated that the plasma generating apparatus emits a plasma beam (25) from a plasma gun (20) and thereafter deforms the emitted plasma beam (25) by a pair of opposing first magnets (27, 29) arranged to sandwich the plasma beam(25). The plasma generating apparatus includes at least one second magnet (11) which is arranged between the plasma gun (20) and the first magnets (27, 29), the second magnet includes a hole (12) which the plasma beam (25) passes through and a magnet portion extended outside along the perpendicular direction of the plasma beam(25) from the hole (12), and forms a magnetic field with magnetic lines reaching outside from the hole (12) or reaching the hole (12) from outside. At least one second magnet (12) concentrates the emitted plasma beam.

CHARGED PARTICLE MULTI­BEAMLET APPARATUS

Multiple-beam system for high-speed electron-beam inspection

Electron beam device

PARTICLE BEAM SYSTEM AND METHOD FOR OPERATING THE SAME

A method of operating a particle beam system includes digitally controlling first and second digitally controlled modules of the particle beam system, and sending digital command data to the first and second digitally controlled modules. The digital command data include at least a first command for the first digitally controlled module and at least a second command for the second digitally controlled module. The digital command data is generated based on information representing: a) a time when the first command is to be executed by the first digitally controlled module; and b) a time when the second command is to be executed by the second digitally controlled module.

Inspection of regions of interest using an electron beam system

A system for scanning a plurality of regions of interest of a substrate using one or more charged particle beams, the system comprises: an irradiation module having charged particle optics; a stage for introducing a relative movement between the substrate and the charged particle optics; an imaging module for collecting electrons emanating from the substrate in response to a scanning of the regions of interest by the one or more charged particle beams; and wherein the charged particle optics is arranged to perform countermovements of the charged particle beam during the scanning of the regions of interest thereby countering relative movements introduced between the substrate and the charged particle optics during the scanning of the regions of interest.

Ion implanter and ion implantation method

A beamline unit of an ion implanter includes a steering electromagnet, a beam scanner, and a beam collimator. The beamline unit contains a reference trajectory of an ion beam. The steering electromagnet deflects the ion beam in an x direction perpendicular to a z direction. The beam scanner deflects the ion beam in the x direction in a reciprocating manner to scan the ion beam. The beam collimator includes a collimating lens that collimates the scanned ion beam in the z direction along the reference trajectory, and the collimating lens has a focus at a scan origin of the beam scanner. A controller corrects a deflection angle in the x direction in the steering electromagnet so that an actual trajectory of the deflected ion beam intersects with the reference trajectory at the scan origin on an xz plane.

Exposure apparatus and exposure method

Complex and fine patterns may be formed by an exposure apparatus that decreases movement error of a stage including a beam generating section that generates a charged particle beam, a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section, a detecting section that detects a position of the stage section, a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section, and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount.

Gas jet deflection in pressurized systems

Provided herein are articles of manufacture, systems, and methods employing a gas-deflector plate in low to ultra-high vacuum systems that use differential pumping (e.g., gas-target particle accelerators, mass spectrometers, and windowless delivery ports). In certain embodiments, the gas-deflector plate is configured to be positioned between higher and lower pressure regions in a pressurized system, wherein the gas-deflector plate has a channel therethrough shaped and/or angled such that jetting gas moving through the channel enters the lower pressure region at an angle offset from the vertical axis of the gas-deflector plate and/or the channel. In other embodiments, a jet-deflector component is employed such that the jetting gas strikes such jet-deflector component and is re-directed in another direction.

CHARGED PARTICLE INSPECTION METHOD AND CHARGED PARTICLE SYSTEM

Particle-optical component

A method of focusing a plurality of charged particle beamlets, the method comprises: transmitting at least one of a charged particle beam and a plurality of charged-particle beamlets through a first multi-aperture plate and a second multi-aperture plate, each having a plurality of apertures, with centres of the first and second multi-aperture plates being spaced a distance w0 apart, applying a first electric potential U1 to the first multi-aperture plate, applying a second electric potential U2 to the second multi-aperture plate, the second electric potential being different from the first electric potential; at least one of generating an electrical field traversed by the beam path upstream of the first multi-aperture plate and an electrical field traversed by the beam path downstream of the second multi-aperture plate, such that a first field strength E1 of an electrical field upstream and in the vicinity of the first multi-aperture plate differs from a second field strength E2 of an electrical ...

ИОННО-ПЛАЗМЕННЫЕ ИЗЛУЧАТЕЛИ ЭЛЕКТРОНОВ ДЛЯ ПЛАВИЛЬНОЙ ПЕЧИ

Изобретение относится к области металлургии и может быть использовано при электронно-лучевой плавке электропроводящего металлического материала. Устройство содержит вакуумную камеру с подом, по меньшей мере один ионно-плазменный излучатель электронов, выполненный с возможностью создания первого поля электронов, имеющего первую площадь покрытия, и вспомогательный ионно-плазменный излучатель электронов, расположенный в вакуумной камере или смежно с ней и выполненный с возможностью создания второго поля электронов, имеющего вторую площадь покрытия и достаточную энергию для нагревания части электропроводящего металлического материала до его температуры плавления, плавления твердого конденсата внутри электропроводящего металлического материала и подачи тепла в зоны образующегося слитка. Вспомогательный ионно-плазменный излучатель электронов выполнен с возможностью фокусирования второго поля электронов так, что вторая площадь покрытия меньше, чем первая площадь покрытия, и ориентирующее устройство ...

ОТКЛОНЯЮЩАЯ ПЛАСТИНА И ОТКЛОНЯЮЩЕЕ УСТРОЙСТВО ДЛЯ ОТКЛОНЕНИЯ ЗАРЯЖЕННЫХ ЧАСТИЦ

Изобретение относится к области электронной техники. Отклоняющая пластина (210) для отклонения заряженныхчастиц выполнена в виде печатной платы с металлическимпокрытием, причем отклоняющая пластина (210) имеет выемку (300),образованную в металлическом покрытии. Технический результат - генерирование электрического поля с улучшенной пространственной характеристикой. 2 н. и 14 з.п. ф-лы, 6 ил.

Cooling of a device for influencing an electron beam

Filter for removing macro-particles from a plasma beam

PARTICLE-OPTICAL ARRANGEMENT WITH PARTICLE-OPTICAL COMPONENT

Ion plasma electron emitters for a melting furnace

An apparatus for melting an electrically conductive metallic material comprises an auxiliary ion plasma electron emitter configured to produce a focused electron field including a cross-sectional profile having a first shape. The apparatus further comprises a steering system configured to direct the focused electron field to impinge the focused electron field on at least a portion of the electrically conductive metallic material to at least one of melt or heat any solidified portions of the electrically conductive metallic material, any solid condensate within the electrically conductive metallic material, and/or regions of a solidifying ingot.

Method and apparatus for neutral beam processing based on gas cluster ion beam technology

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

METHOD AND APPARATUS FOR NEUTRAL BEAM PROCESSING BASED ON GAS CLUSTER ION BEAM TECHNOLOGY

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

To improve the magnetic scanning the ion beam in the ion implantation system of the conformance of the method

Lithography apparatus and method, and method of manufacturing an article

A lithography apparatus for performing patterning on a substrate with a charged particle beam is provided. An optical system of the apparatus has a function of adjusting the focus position of the charged particle beam and the irradiation position of the charged particle beam on the substrate, and irradiates the substrate with the charged particle beam. A controller of the apparatus controls the optical system such that the patterning is performed with adjustment, of the focus position and the irradiation position based on the surface shape of the substrate for adjustment of the focus position, accompanied with the patterning.

PARTICLE -OPTICAL COMPONENT

The present invention relates to a particle-optical component comprising a first multi -aperture plate (613), and a second multi- aperture plate (614) forming a gap between them; wherein a plurality of apertures (615) of the first multi -aperture plate is arranged such that each aperture of the plurality of apertures of the first multi-aperture plate is aligned with a corresponding aperture of a plurality of apertures of the second multi-aperture plate; and wherein the gap has a first width (wl) at a first location and a second width (w2) at a second location and wherein the first width is by at least 5% greater than the second width. In addition, the present invention pertains to charged particle systems and arrangements comprising such components and methods of manufacturing multi aperture plates having a curved surface .

Charged particle beam scanning method and charged particle beam apparatus

In a method of scanning a charged particle beam which can position the scan position to a proper location inside a deflectable range of the scan position of charged particle beam, the scan position of charged particle beam is deflected to a plurality of target objects inside a scan position deflectable region and on the basis of a shift of a target object at a scan location after deflection, the deflection amount at the scan location is corrected.

Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

MULTIPLE CHARGED PARTICLE BEAM WRITING METHOD, AND MULTIPLE CHARGED PARTICLE BEAM WRITING APPARATUS

A multiple charged particle writing method includes performing a tracking operation by shifting the main deflection position of multiple beams using charged particle beams in the direction of stage movement so that the main deflection position of the multiple beams follows the stage movement while a predetermined number of beam shots of the multiple beams are performed, and shifting the sub deflection position of the multiple beams so that each beam of the multiple beams straddles rectangular regions among plural rectangular regions obtained by dividing a writing region of a target object into meshes by the pitch size between beams of the multiple beams, and the each beam is applied to a different position in each of the rectangular regions straddled, and applying a predetermined number of shots per beam using plural beams in the multiple beams to each of the plural rectangular regions, during the tracking operation.

BEAM POSITION MONITORS FOR MEDICAL RADIATION MACHINES

An apparatus includes: a structure having a lumen for accommodating a beam, wherein the structure is a component of a medical radiation machine having a target for interaction with the beam to generate radiation; and a first beam position monitor comprising a first electrode and a second electrode, the first electrode being mounted to a first side of the structure, the second electrode being mounted to a second side of the structure, the second side being opposite from the first side; wherein the first beam position monitor is located upstream with respect to the target.

PROJECTION LENS ARRANGEMENT

Verfahren zum Detektieren von Elektronen, Elektronendetektor und Inspektionssystem

Verfahren zum Detektieren einer Vielzahl von Elektronenstrahlen, umfassend:Richten einer Vielzahl von Elektronenstrahlen (9) auf eine Szintillator-Platte (207) mit einer Elektronenoptik (204), so dass die Elektronenstrahlen (9) an einer Vielzahl von mit Abstand (p2) voneinander angeordneten Auftrefforten (213) auf die Szintillator-Platte (207) auftreffen;Abbilden der Auftrefforte (213) auf eine Vielzahl von Lichtempfangsflächen (235) eines Lichtdetektors (237) mit einer Lichtoptik (223);Detektieren des auf die Lichtempfangsflächen (235) treffenden Lichts; undVerlagern der Auftrefforte (213), an denen die Elektronenstrahlen (9) auf die Szintillator-Platte (207) treffen, in eine Richtung (247) orthogonal zu einer Normalen (249) bezüglich einer Oberfläche (208) der Szintillator-Platte (207),dadurch gekennzeichnet, dassdie Lichtoptik (223) die Auftrefforte (213) und die verlagerten Auftrefforte (213') so auf die Vielzahl von Lichtempfangsflächen (235) abbildet, dass einem jeden der Vielzahl ...

Cooling of a device for influencing an electron beam

A device for influencing an electron beam, in particular a beam deflector 10, comprises a cylindrical support body 11 with an axial passage 12 through which the beam can propagate and axially spaced sets of coils 14 supported by the body and operable by electrical energy to produce electromagnetic fields for deflection of the beam. The device includes a cooling system for counteracting temperature rise in the body 11 due to operation of the coils 14. The system comprises a pipe 15 of compliant material extending helically around and thermally conductively coupled, preferably adhesively bonded, to the support body 11 and serving to conduct liquid coolant for heat exchange with the body 11 over substantially all the external circumferential surface thereof. The cooling system further includes a pump 16 for conveying the coolant through the pipe 15 in a generally laminar flow so that, in conjunction with the flow path and pipe material, generation of vibrations is largely avoided and any vibrations ...

Ion-implanter having variable ion beam angle control

SOURCE FOR CHARGED PARTICLES WITH INTEGRATED ENERGY FILTER

ELECTRON BEAM EXPOSURE SYSTEM FOR VLSI MANUFACTURE

The system includes an electron optical device (1) for generating electron beams and irradiating the beams to a sample on a stage through a number of electron lens, a main deflection coil (6), and subdeflection electrodes (7), to form predetermined circuit patterns on the sample. The system also includes a position control device (10) controlling the driving of the stage based on a stage position coordinate designated by the computer, detecting an actual stage position coordinate, and calculating an error value between the designated stage position coordinate and the actual stage position coordinate. Copyright 1997 KIPO ...

METHOD AND APPARATUS FOR NEUTRAL BEAM PROCESSING BASED ON GAS CLUSTER ION BEAM TECHNOLOGY

A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.

CHARGED PARTICLE BEAM EXPOSURE APPARATUS SUITABLE FOR DRAWING ON LINE PATTERNS, AND EXPOSURE METHOD USING THE SAME

There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region.

Beam position monitors for medical radiation machines

An apparatus includes: a structure having a lumen for accommodating a beam (e.g., electron beam, proton beam, or a charged particle beam), wherein the structure is a component of a medical radiation machine having a target for interaction with the beam to generate radiation; and a first beam position monitor comprising a first electrode and a second electrode, the first electrode being mounted to a first side of the structure, the second electrode being mounted to a second side of the structure, the second side being opposite from the first side; wherein the first beam position monitor is located upstream with respect to the target.

Scanning charged particle microscope, image acquisition method, and electron detection method

A scanning charged particle microscope is offered which can selectively detect and image electrons. The scanning charged particle microscope (100) has: a source (1) of a charged particle beam (E1); an objective lens (6) for bringing the charged particle beam (E1) emitted from the source (1) into focus at a sample (S); a scanning deflector (4) for scanning the focused charged particle beam (E1) over the sample (S); a sorting portion (10) for sorting out electrons emitted at given emission angles from electrons released from the sample (S) in response to irradiation of the sample (S) by the charged particle beam (E1); an electron deflector (20) for producing a deflecting field to deflect the electrons (E2) sorted out according to their energy; a detection portion (30) for detecting the electrons (E2) deflected by the electron deflector (20); and an image creating portion (44) for creating an image, based on the results of the detection performed by the detection portion (30).

ELECTRON BEAM DEVICE

Methods for using electron diffraction holography to investigate a sample, according to the present disclosure include the initial steps of emitting a plurality of electrons toward the sample, forming the plurality of electrons into a first electron beam and a second electron beam, and modifying the focal properties of at least one of the two beams such that the two beams have different focal planes. Once the two beams have different focal planes, the methods include focusing the first electron beam such that it has a focal plane at or near the sample, and focusing the second electron beam so that it is incident on the sample, and has a focal plane in the diffraction plane. An interference pattern of the first electron beam and the diffracted second electron beam is then detected in the diffraction plane, and then used to generate a diffraction holograph.

DEVICE AND METHOD FOR FORMING ELECTRON BEAM DARK FIELD IMAGE

PROBLEM TO BE SOLVED: To provide a dark field detection system of a scanning electron microscope (SEM) having a polar angle identification function of scattered electrons. SOLUTION: This is to disclose a position embodiment relating to an electron beam scanning device which includes an objective lens, a scanning deflector, an anti-scanning deflector, an energy-filter drift tube, and a detector split in region. For the objective lens, an immersion lens having a high abstraction field is used, and identification of azimuth of the electrons scattered on the surface of the sample is made possible. The anti-scanning deflector is used for correction of scanning of the incident electron beams. The energy-filter drift tube is constructed so as to match the scattered electrons according to the polar angle of the orbit from the surface of the sample. COPYRIGHT: (C)2006,JPO&NCIPI ...

СПОСОБ И УСТРОЙСТВО ОБРАБОТКИ НЕЙТРАЛЬНЫМ ПУЧКОМ, ОСНОВАННЫЕ НА ТЕХНОЛОГИИ ПУЧКА ГАЗОВЫХ КЛАСТЕРНЫХ ИОНОВ

... 1. Способ обработки поверхности заготовки, содержащий этапы, на которых:обеспечивают камеру пониженного давления;формируют пучок газовых кластерных ионов, содержащий газовые кластерные ионы внутри данной камеры пониженного давления;ускоряют газовые кластерные ионы, чтобы сформировать пучок ускоренных газовых кластерных ионов вдоль траектории пучка внутри камеры пониженного давления;стимулируют фрагментацию и/или диссоциацию, по меньшей мере, части ускоренных газовых кластерных ионов вдоль траектории пучка;удаляют заряженные частицы из данной траектории пучка, чтобы сформировать ускоренный нейтральный пучок вдоль траектории пучка в камере пониженного давления;удерживают заготовку на траектории пучка; иобрабатывают, по меньшей мере, часть поверхности данной заготовки путем ее облучения ускоренным нейтральным пучком.2. Способ по п. 1, в котором на этапе удаления удаляют, по существу, все заряженные частицы из траектории пучка.3. Способ по п. 1, в котором данный нейтральный пучок, по существу ...

ОТКЛОНЯЮЩАЯ ПЛАСТИНА И ОТКЛОНЯЮЩЕЕ УСТРОЙСТВО ДЛЯ ОТКЛОНЕНИЯ ЗАРЯЖЕННЫХ ЧАСТИЦ

... 1. Отклоняющая пластина (210) для отклонения заряженных частиц, причем отклоняющая пластина (210) имеет выемку (300).2. Отклоняющая пластина (210) по п. 1, причем отклоняющая пластина (210) выполнена как, по существу, плоская пластина.3. Отклоняющая пластина (210) по любому из предыдущих пунктов, причем выемка (300) выполнена в виде отверстия.4. Отклоняющая пластина (210) по п. 1 или 2, причем выемка (300) выполнена в виде щели.5. Отклоняющая пластина (210) по любому из предыдущих пунктов, причем выемка (300) расположена в центре отклоняющей пластины (210).6. Отклоняющая пластина (210) по любому из предыдущих пунктов, причем отклоняющая пластина (210) содержит проводящий материал, в частности, металл.7. Отклоняющее устройство (130) для отклонения заряженных частиц, причем отклоняющее устройство (130) включает в себя первую отклоняющую пластину (210) согласно любому из предыдущих пунктов.8. Отклоняющее устройство (130) по п.7, причем отклоняющее устройство (130) содержит вторую отклоняющую ...

Rückstreuionenspektrometer

PROCESSING APPARATUS, ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD

Electron beam device

ION PLASMA ELECTRON EMITTERS FOR A MELTING FURNACE

An apparatus for melting an electrically conductive metallic material comprises an auxiliary ion plasma electron emitter configured to produce a focused electron field including a cross-sectional profile having a first shape. The apparatus further comprises a steering system configured to direct the focused electron field to impinge the focused electron field on at least a portion of the electrically conductive metallic material to at least one of melt or heat any solidified portions of the electrically conductive metallic material, any solid condensate within the electrically conductive metallic material, and/or regions of a solidifying ingot.

METHOD AND APPARATUS FOR NEUTRAL BEAM PROCESSING BASED ON GAS CLUSTER ION BEAM TECHNOLOGY

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

DRUG DELIVERY SYSTEM AND METHOD OF MANUFACTURING THEREOF

A medical device for surgical implantation adapted to serve as a drug delivery system has one or more drug loaded holes with barrier layers to control release or elution of the drug from the holes or to control inward diffusion of fluids into the holes. The barrier layers are non-polymers and are formed from the drug material itself by beam processing. The holes may be in patterns to spatially control drug delivery. Flexible options permit combinations of drugs, variable drug dose per hole, multiple drugs per hole, temporal control of drug release sequence and profile. Methods for forming such a drug delivery system are also disclosed. Gas cluster ion beam and/or accelerated Neutral Beam derived from an accelerated gas cluster ion beam may be employed.

Charged-particle beam apparatus and method for automatically correcting astigmatism and for height detection

Charged-particle beam arrangements (e.g., apparatus and methods) for automatically correcting astigmatism and for height detection.

Charged particle beam transfer device exhibiting low aberration

A charged particle beam transfer device exhibiting a low level of aberration is disclosed. The device comprises a first deflector for deflecting a charged particle beam, that has passed through a subfield on a reticle, such that the beam passes through the optical axis, or at least the center, of a projection lens. To such end, the first deflector deflects the beam a first angle of deflection relative to an optical axis of the device. The device also comprises a second deflector to deflect the beam, after having passed through the projection lens, at a second angle of deflection that is opposite the first angle of deflection. Thus, the beam is guided to a region on a substrate surface corresponding to the particular subfield on the reticle.

Method for modifying the wettability and/or other biocompatibility characteristics of a surface of a biological material by the application of gas cluster ion beam technology and biological materials made thereby

A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.

УСТРОЙСТВО С МНОЖЕСТВЕННЫМИ ЭЛЕМЕНТАРНЫМИ ПУЧКАМИ ЗАРЯЖЕННЫХ ЧАСТИЦ

Изобретение относится к способу и устройству для манипуляции одним или более пучками заряженных частиц из множества элементарных пучков заряженных частиц в устройстве с множественными элементарными пучками заряженных частиц. Манипуляторное устройство содержит плоскую подложку, содержащую решетку со сквозными отверстиями в плоскости подложки, причем каждое из этих сквозных отверстий скомпоновано для прохождения через него по меньшей мере одного элементарного пучка заряженных частиц, при этом каждое из сквозных отверстий обеспечено одним или более электродами, скомпонованными вокруг сквозного отверстия, и электронную схему управления для предоставления управляющих сигналов на один или более электродов каждого сквозного отверстия, при этом электронная схема управления скомпонована для обеспечения одного или более электродов каждого отдельного сквозного отверстия по меньшей мере по существу регулируемым аналоговым напряжением. Технический результат - повышение качества и производительности ...

ИОННО-ПЛАЗМЕННЫЕ ИЗЛУЧАТЕЛИ ЭЛЕКТРОНОВ ДЛЯ ПЛАВИЛЬНОЙ ПЕЧИ

... 1. Устройство для плавления электропроводящего металлического материала, содержащее:вакуумную камеру;под, расположенный в вакуумной камере;по меньшей мере один ионно-плазменный излучатель электронов, расположенный в вакуумной камере или смежно с ней и размещенный для направления первого поля электронов, имеющего первую площадь поперечного сечения, в вакуумную камеру, причем первое поле электронов имеет достаточную энергию для нагревания электропроводящего металлического материала до его температуры плавления;по меньшей мере одно из кристаллизатора и распылительного устройства, размещенного для приема электропроводящего металлического материала из пода; ивспомогательный ионно-плазменный излучатель электронов, расположенный в вакуумной камере или смежно с ней и размещенный для направления второго поля электронов, имеющего вторую площадь поперечного сечения, в вакуумную камеру, причем второе поле электронов имеет достаточную энергию для по меньшей мере одного из нагревания частей электропроводящего ...

ОТКЛОНЯЮЩАЯ ПЛАСТИНА И ОТКЛОНЯЮЩЕЕ УСТРОЙСТВО ДЛЯ ОТКЛОНЕНИЯ ЗАРЯЖЕННЫХ ЧАСТИЦ

... 1. Отклоняющая пластина (210) для отклонения заряженных частиц, при этом отклоняющая пластина (210) имеет не плоскую форму.2. Отклоняющая пластина (210) по п. 1, при этом отклоняющая пластина (210) изогнута вокруг ориентированной в первом пространственном направлении (101) оси.3. Отклоняющая пластина (210) по п. 2, при этом отклоняющая пластина (210) имеет форму дуги боковой поверхности цилиндра.4. Отклоняющая пластина (210) по любому из пп. 1-3, при этом отклоняющая пластина (210) имеет проводящий материал, в частности металл.5. Отклоняющее устройство (130) для отклонения заряженных частиц, при этом отклоняющее устройство (130) имеет первую отклоняющую пластину (210) по любому из пп. 1-4.6. Отклоняющее устройство (130) по п. 5, при этом отклоняющее устройство (130) имеет вторую отклоняющую пластину (220) по любому из пп. 1-4.7. Отклоняющее устройство (130) по п. 6, в котором вторая отклоняющая пластина (220) расположена зеркально относительно первой отклоняющей пластины (210).8. Отклоняющее ...

Ladungsträgerstrahlvorrichtung

Um eine Ladungsträgerstrahlvorrichtung zu schaffen, die Sekundärteilchen und elektromagnetische Wellen auch für eine nichtleitfähige Probe in einer Hochvakuumumgebung stabil detektieren kann und eine hervorragende Beobachtung und Analyse ermöglichen kann, umfasst die Ladungsträgerstrahlvorrichtung eine Ladungsträgerkanone (12), Abtastablenker (17 und 18), die dazu ausgelegt sind, einen Ladungsträgerstrahl (20), der von der Ladungsträgerkanone (12) emittiert wird, auf eine Probe (21) abzulenken, Detektoren (40 und 41), die dazu ausgelegt sind, eine von außen in die Abtastablenker eingegebene Abtaststeuerspannung zu detektieren, eine Recheneinheit (42), die dazu ausgelegt ist, basierend auf der detektierten Abtaststeuerspannung Bestrahlungspixelkoordinaten für den Ladungsträgerstrahl zu berechnen; und einen Bestrahlungscontroller (45), der dazu ausgelegt ist, die Bestrahlung der Probe mit dem Ladungsträgerstrahl gemäß den Bestrahlungspixelkoordinaten zu steuern.

Verfahren zum Betreiben eines Teilchenstrahlsystems, Teilchenstrahlsystem und Computerprogrammprodukt

Die vorliegende Erfindung betrifft ein Verfahren zum Betreiben eines Teilchenstrahlmikroskops. Das Verfahren umfasst das Wiederholen einer Sequenz, um einen Teilchenstrahl über eine Oberfläche (27) eines Objekts zu führen, welches einen durch eine geschlossene Grenzlinie (29) begrenzten Bereich (25) auf der Oberfläche (27) aufweist. Die Sequenz umfasst das Führen des Teilchenstrahls von einem Eintrittsort (31-1 bis 31-5) der aktuellen Sequenz zu einem Austrittsort (33-1 bis 33-5) der aktuellen Sequenz entlang eines Scan-Wegs (35-1 bis 35-5), wobei der Eintrittsort und der Austrittsort auf der Grenzlinie (29) liegen und der Scan-Weg (35-1 bis 35-5) vollständig innerhalb des Bereichs (25) verläuft, und das Führen des Teilchenstrahls von dem Austrittsort (33-1 bis 33-5) der aktuellen Sequenz zu einem Eintrittsort (31-2 bis 31-5, 31-1) der nächsten Sequenz entlang eines Rückführungswegs (37-1 bis 37-5), wobei der Eintrittsort der nächsten Sequenz auf der Grenzlinie (29) liegt und der Rückführungsweg ...

ION PLASMA ELECTRON EMITTERS FOR A MELTING FURNACE

An apparatus for melting an electrically conductive metallic material comprises an auxiliary ion plasma electron emitter configured to produce a focused electron field including a cross-sectional profile having a first shape. The apparatus further comprises a steering system configured to direct the focused electron field to impinge the focused electron field on at least a portion of the electrically conductive metallic material to at least one of melt or heat any solidified portions of the electrically conductive metallic material, any solid condensate within the electrically conductive metallic material, and/or regions of a solidifying ingot.

CHARGED PARTICLE BEAM DEVICE

In a case where a signal electron is subject to energy selection and detected by performing control by combining retarding and boosting for deep hole observation and the like, there is no choice but to use the magnetic field change of an objective lens for focus adjustment, but because magnetic field change has poor responsivity, through-put is reduced. In the present invention, the following are provided: an electron source for generating a primary electron beam; an objective lens for converging the primary electron beam; a deflector for deflecting the primary electron beam; a detector for detecting reflected electrons and secondary electrons emitted from a sample as a result of the emission of the primary electron beam; an electrode having a hole through which the primary electron beam passes; a voltage control power source for applying a negative voltage to the electrode; and a retarding voltage control power source for generating on the sample an electrical field that decelerates the ...

Method and apparatus for electron beam lithography

A method of manufacturing a wafer with an integrated circuit (IC) layout includes receiving a first plurality of pixels, wherein each of the pixels corresponds to a portion of the IC layout and includes data members. The method further includes transforming the first plurality of pixels into a second plurality of control signals, wherein at least some of the control signals include both a data member of one of the pixels and another data member of another one of the pixels. The method further includes transferring the control signals to a third plurality of mirrors, wherein the mirrors conditionally reflect an energy beam incident thereupon when coupled with the control signals.

Charged particle beam device and method for analyzing defect therein

The present invention provides a charged particle beam device capable of automatically setting proper analysis positions for defects having various shapes. This charged particle beam device includes: an electron source for emitting an electron beam; a condenser lens for converging the electron beam emitted from the electron source; deflection means for changing a position of the electron beam converged by the condenser lens; an objective lens for constricting the electron beam changed by the deflection means so as to irradiate an inspection object therewith; a sample stage on which the inspection object is to be mounted; and defect analysis means for analyzing a defect based on information as to elements released from a defective portion of the inspection object by the irradiation with the electron beam, wherein the defect analysis means determines an analysis point based on a shape of the defect from among defect areas decided as one defect by the defect analysis means.

Charged particle inspection method and charged particle system

The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the ...

Electron-beam focusing apparatus and electron-beam projection lithography system employing the same

An electron-beam focusing apparatus for controlling a path of electron beams emitted from an electron-beam emitter in an electron-beam projection lithography (EPL) system includes top and bottom magnets for creating a magnetic field within a vacuum chamber, the top and bottom magnets disposed above and below the vacuum chamber into which a wafer is loaded, respectively; upper and lower pole pieces magnetically contacting the top and bottom magnets, respectively, the upper and lower pole pieces penetrating a top wall and a bottom wall of the vacuum chamber, respectively; and upper and lower projections having a circular shape, extending outwardly from facing surfaces of the upper and lower pole pieces, respectively.

Particle-optical component

Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl.

High speed multi-frame dynamic transmission electron microscope image acquisition system with arbitrary timing

하전 입자들을 편향시키기 위한 편향 플레이트 및 편향 디바이스

... 본 발명은 하전 입자들을 편향시키기 위한, 비-평면형 형상을 갖는 편향 플레이트(deflection plate)에 관한 것이다.

전자 빔 시스템을 이용한 관심 영역들의 검사

... 하나 이상의 하전 입자 빔을 이용하여 기판의 복수의 관심 영역을 주사하기 위한 시스템이 개시되는데, 이 시스템은 하전 입자 광학계를 갖는 조사 모듈; 기판과 하전 입자 광학계 사이에 상대 이동을 도입하기 위한 스테이지; 및 하나 이상의 하전 입자 빔에 의한 관심 영역들의 주사에 응답하여 기판으로부터 나오는 전자들을 수집하기 위한 이미징 모듈을 포함하고, 하전 입자 광학계는 관심 영역들의 주사 동안 하전 입자 빔의 대항 이동을 수행함으로써 관심 영역들의 주사 동안 기판과 하전 입자 광학계 사이에 도입되는 상대 이동들에 대항하도록 배열된다.

하전 입자 선 장치

... 본 발명은, 에지 폭이 좁고, 에지 고유의 피크의 검출이 곤란한 패턴이여도 고정밀도로 측정을 행하는 것이 가능한 하전 입자 선 장치의 제공을 목적으로 한다. 상기 목적을 달성하기 위해, 하전 입자 빔(1, 2(a))의 통과 개구를 구비한 개구부 형성 부재(31)와, 시료(23)로부터 방출된 하전 입자, 또는 그 하전 입자가 상기 개구부 형성 부재에 충돌함으로써 발생하는 하전 입자를 검출하는 검출기(28(a), 28(b))를 구비한 하전 입자 선 장치이며, 상기 시료로부터 방출된 하전 입자를 편향하는 편향기(33(a), 33(b))와, 그 편향기를 제어하는 제어 장치(40)를 구비하고, 상기 제어 장치는, 상기 시료 상의 복수의 에지 중, 하나의 에지의 신호가 상대적으로 다른 에지의 신호에 대해 강조된 제1 검출 신호와, 상기 복수의 에지 중, 다른 에지의 신호가 상대적으로 상기 하나의 에지의 신호에 대해 강조된 제2 검출 신호를 이용하여, 패턴 측정을 실행하는 하전 입자 선 장치를 제안한다.

Deflector for multiple electron beams and multiple beam image acquiring apparatus

A deflector for multiple electron beams includes a first electrode substrate, second to fourth electrode substrates disposed in order in parallel to each other in a first same plane which is orthogonal to the substrate surface of the first electrode substrate, a fifth electrode substrate disposed opposite to the first electrode substrate, and sixth to eighth electrode substrates disposed in order in parallel to each other in a second same plane such that they are opposite to the second to fourth electrode substrates, wherein the first to eighth electrode substrates are disposed such that they surround a space through which multiple electron beams pass.

Method and Apparatus for Electron Beam Lithography

A method of manufacturing a substrate is disclosed. The method includes receiving a plurality of pixel elements, wherein each of the pixel elements includes data members; and transferring the data members to a plurality of exposing devices that are configured to conditionally expose the substrate with an incident energy beam when coupled with the data members, wherein different data members of one pixel element are transferred at different system cycles.

System and method for ion implantation with improved productivity and uniformity

A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.

Method and apparatus for deflecting charged particles

A large-area ion beam having a one-directionally long section is generated in a magnetically shielded ion source. The ion beam is bent evenly to form a large center angle of about 90 degrees in the direction of the short side by a window/frame type magnet having a large gap and having left and right frames each wound with a plurality of coils. Then, the ion beam is made to pass through a slit plate having a one-directionally long opening so that unnecessary ions are removed. The ion beam is then radiated onto a subject which makes a translational motion in the direction of the short side of the beam.

Ion implantation apparatus

An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.

Electron Gun

An electron gun (10) includes the following: a primary thermionic electron source (44), a secondary thermionic electron source (58) and a focusing electrode (62) disposed within a first housing (12) that includes one or more reference members adjustably attached to a housing support connected to a first platform; an anode (78) and one or more focusing coils (86A, 86B) disposed within a second housing (14) comprising one or more insulating members adjustably connected to the first platform; and one or more deflection coils (104A, 104B) disposed within a third housing (16) connected to the second housing (14) and located opposite said first housing (12).

Rasterelektronenmikroskop

Method for Axial Alignment of Charged Particle Beam and Charged Particle Beam System

A method for axial alignment of a charged particle beam relative to at least three stages of multipole elements and a charged particle beam system capable of making the axial alignment. Some parts of the orbit of the beam or the distributions of three astigmatic fields, or both, are simultaneously translated in a direction perpendicular to the optical axis such that astigmatisms of the same order and same type due to axial deviations between successive ones of the astigmatic fields cancel.

Particle beam device with deflection system

A particle beam device includes a particle beam generator, an objective lens, and first and second deflection systems for deflecting the particle beam in an object plane defined by the objective lens. In a first operating mode, the first deflection system generates a first deflection field and the second deflection system generates a second deflection field. In a second operating mode, the first deflection system generates a third deflection field and the second deflection system generates a fourth deflection field.

Lithography system and method of refracting

A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.

Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments

One embodiment relates to a focused electron beam imaging apparatus. The apparatus includes an electron beam column, an electron source, a gun lens, a pre-scanning deflector, a main scanning deflector, an objective lens, and a detector. The pre-scanning deflector comprises a 12-pole electrostatic deflector which is configured to controllably deflect the electron beam away from the optical axis of the electron beam column. Another embodiment relates to a method of scanning an electron beam over a target substrate in a focused electron beam imaging instrument. The electron beam is controllably deflected, without third-order deflection aberrations, away from an optical axis of an electron beam column using a pre-scanning deflector. The electron beam is then controllably deflected back towards the optical axis using a main scanning deflector so that the electron beam passes through a center of an objective electron lens. Other embodiments, aspects and features are also disclosed.

Scanning electron microscope and inspection method using same

Provided is a high-resolution scanning electron microscope with minimal aberration, and equipped with an electro-optical configuration that can form a tilted beam having wide-angle polarization and a desired angle, without interfering with an electromagnetic lens. In the scanning electron microscope, an electromagnetic deflector ( 201 ) is disposed above a magnetic lens ( 207 ), and a control electrode ( 202 ) that accelerates or decelerates electrons is provided so at to overlap (in such a manner that the height positions overlap with respect to the vertical direction) with the electromagnetic deflector ( 201 ). In wide field polarization, electrodes are accelerated, and in tilted beam formation, electrons are decelerated.

Charged particle beam device provided with automatic aberration correction method

Disclosed is an aberration measurement method of a charged particle beam device provided with an aberration corrector ( 4 ). The method is characterized by: when measuring aberration, (A) the number of pixels or the resolution is changed of a first image and a second image that are benchmarks when measuring field of view offset, and after determining the destination of movement resulting from a rough field of view offset, the number of pixels or the resolution of the first image and the second image are set to the same conditions, and the amount of field of view offset is measured precisely, or (B) a sample having lines in the horizontal direction and in the vertical direction is one-dimensionally scanned, and the amount of movement is measured from the signal position offset. As a result, in a charged particle beam device provided mounted with an aberration corrector, it becomes possible to provide a highly precise aberration measurement method that is not to the detriment of measurement time.

Phase plate

A phase plate for a charged particle beam system, such as a transmission electron microscope (TEM), is described. The phase plate comprises a support having a through-hole and an elongate member which is magnetisable in a direction along its length and which extends partially across the through-hole and which is narrower than the through-hole.

Compact, filtered ion source

The present invention relates to a filtered cathodic-arc ion source that reduces, or even eliminates, macroparticles while minimally compromising the compact size, simplicity, and high flux ion production benefits of unfiltered cathodic-arc sources. Magnetic and electrostatic forces are implemented in a compact way to guide ions along curved trajectories between the cathode source and the workpiece area such that macroparticles, which are minimally affected by these forces and travel in straight lines, are inhibited from reaching the workpieces. The present invention implements this filtering technique in a device that is compact, symmetrical and easy to manufacture and operate and which does not substantially compromise coating deposition rate, area, or uniformity.

Method for setting an operating parameter of a particle beam device and a sample holder for performing the method

A method for adjusting an operating parameter of a particle beam device and a sample holder, which is suitable in particular for performing the method are provided. An adjustment of an operating parameter of a particle beam device is possible without transfer of the sample holder out of the particle beam device. A reference sample is placed in a first sample receptacle, so that in ongoing operation of the particle beam device, the sample holder need only be positioned in such a way that the reference sample is bombarded and measured with the aid of a particle beam generated in the particle beam device.

Charged particle microscope and measurement image correction method thereof

A charged particle microscope corrects distortion in an image caused by effects of drift in the sampling stage by measuring the correction reference image in a shorter time than the observation image, making corrections by comparing the shape of the observation image with the shape of the correction reference image, and reducing distortion in the observation images. The reference image for distortion correction is measured at the same position and magnification as when acquiring images for observation. In order to reduce effects from drift, the reference image is at this time measured within a shorter time than the essential observation image. The shape of the observation image is corrected by comparing the shapes of the reference image and observation image, and correcting the shape of the observation image to match the reference image.

Method and Apparatus for Scanning a Surface of an Object Using a Particle Beam

A method of scanning a surface of an object using a particle beam comprises: determining a surface portion of the surface of the object, wherein the surface portion is to be scanned; determining initial positions of a set of raster points within the surface portion; changing the positions of at least some raster points of the set of raster points; and then scanning the surface portion by directing the particle beam to the positions of the raster points.

Method of Axial Alignment of Charged Particle Beam and Charged Particle Beam System

A method of axially aligning a charged particle beam implemented by a charged particle beam system equipped with an astigmatic correction lens including a first pair of coils and a second pair of coils. The method starts with obtaining first to sixth sets of image data while varying currents flowing through the first to fourth coils according to first to sixth sets of conditions. Then, the values of the currents through the first to fourth coils for correcting the position of the axis of the beam are calculated based on the first to sixth sets of image data.

Electrostatic deflector, lithography apparatus, and method of manufacturing device

The present invention provides an electrostatic deflector which deflects a plurality of charged particle beams, the deflector comprising a first electrode member including a plurality of first electrode pairs arranged along a first axis direction in an oblique coordinate system, and a second electrode member including a plurality of second electrode pairs arranged along a second axis direction in the oblique coordinate system, wherein each of the plurality of charged particle beams is deflected by a corresponding first electrode pair of the plurality of first electrode pairs, and a corresponding second electrode pair of the plurality of second electrode pairs.

Charged particle beam apparatus

The charged particle beam apparatus having an opening formation member formed with an opening for passage of a charged particle beam emitted from a charged particle source, and either a detector adapted to detect charged particles having passed through the passage opening or a detector adapted to detect charged particles resulting from bombardment on another member of the charged particles having passed through the opening, comprises an aligner for aligning charged particles discharged from the sample and a control unit for controlling the aligner, wherein the control unit controls the aligner to cause it to shift trajectories of the charged particles discharged from the sample so that length measurement may be executed on the basis of detection signals before and after the alignment by the aligner.

Charged Particle Optics with Azimuthally-Varying Third-Order Aberrations for Generation of Shaped Beams

A charged particle shaped beam column includes: an objective lens configured to form a charged particle shaped beam on the surface of a substrate, wherein the disk of least confusion of the objective lens does not coincide with the surface of the substrate; an optical element with 8N poles disposed radially symmetrically about the optic axis of the column, the optical element being positioned between a condenser lens and the objective lens, wherein integer N1; and a power supply applying excitations to the optical element's 8N poles to provide an octupole electromagnetic field. The octupole electromagnetic field induces azimuthally-varying third-order deflections to beam trajectories passing through the 8N-pole optical element. By controlling the excitation of the 8N poles a shaped beam, such as a square beam, can be formed at the surface of the substrate.

HIGH-SPEED MULTIFRAME DYNAMIC TRANSMISSION ELECTRON MICROSCOPE IMAGE ACQUISITION SYSTEM WITH ARBITRARY TIMING

An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system (“laser”). The laser produces a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has two pairs of plates arranged perpendicular to one another. A control system controls the laser and a plurality of switching components synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to be provided with an independently set duration and independently set inter-pulse spacings. 1. An electron microscope comprising:a laser-driven photocathode;an arbitrary waveform generation (AWG) laser system for producing a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and arranged to direct the laser pulses to the laser-driven photocathode for producing a train of electron pulses;a first lens stack arranged to focus the train of electron pulses to a sample;a second lens stack producing a magnified image or diffraction pattern of the sample on an image sensor;a deflector subsystem having electrostatic deflector plates arranged downstream of the sample upstream of the image sensor, the deflector plates comprising a first pair of plates and a second pair of plates arranged perpendicular to the first pair of plates; anda control system in communication with both the AWG laser system and the deflector subsystem, the control system communicating with a plurality of switching components and synchronized with the AWG laser system for rapidly and reversibly switching voltage signals applied to each one ...

Conductive beam optic containing internal heating element

Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.

METHODS AND APPARATUS FOR ELECTRON BEAM ETCHING PROCESS

Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions. 1. A method of etching a substrate , comprising:delivering a process gas to a process volume of a process chamber;applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume;generating a plasma comprising ions in the process volume;bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam;applying a negative DC power to the electrode;accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber; andetching the substrate with the accelerated ions.2. The method of claim 1 , wherein the RF power has a low frequency of about 2 MHz.3. The method of claim 1 , wherein the RF power has a high frequency of about greater than 60 MHz.4. The method of claim 1 , wherein accelerating the electrons emitted from the electrode comprises:generating a magnetic field in the process volume of the process chamber;5. The method of further comprising:altering a trajectory of the electrons in the process volume.6. The method of claim 1 , wherein applying the RF power to the electrode and applying the negative DC power to the electrode are performed sequentially.7. The method of claim 1 , ...

Method and System for Edge-of-Wafer Inspection and Review

An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample. 1. A system comprising:an electron beam source configured to generate one or more electron beams;a sample stage configured to secure a sample;an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;a detector assembly configured to detect electrons emanating from the sample; anda controller, wherein the controller is communicatively coupled to one or more portions of at least one of the electron beam source, the set of electron-optical elements of the electron optical column or the stage, wherein the controller is configured to:receive one or more parameters representative of one or more characteristics of the one or more electron beams at an edge portion of the sample;generate a look-up table for compensating for one or more fringe fields within the electron-optical system; andadjust one or more characteristics of the electron-optical system based on the generated look-up table.2. The system of claim 2 , wherein the controller is communicatively coupled to a stigmator of the electron optical column claim 2 , wherein the controller is ...

CHARGED PARTICLE INSPECTION METHOD AND CHARGED PARTICLE SYSTEM

The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the second multi aperture plate. The invention further pertains to a particle-optical component configured to change a divergence of a set of charged particle beamlets and a charged particle inspection method comprising inspection of an object using different numbers of charged particle beamlets. 14-. (canceled)5. A charged particle system comprising:at least one charged particle source;a first multi aperture plate disposed downstream of the at least one charged particle source, the first multi aperture plate comprising a plurality of apertures;a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate comprising a plurality of apertures;a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates;wherein the at least one charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged ...

Particle beam treatment system with solenoid magnets

A particle beam treatment system having a beam generation unit for generating a beam of charged particles, in particular ions, preferably protons, and having a beam guidance system. The generic beam guidance system takes up less space but can provide comparable or even improved beam properties because, in part, the beam guidance system seen in the direction of the beam of charged particles and behind the beam generation unit has at least one solenoid magnet as a beam shaping unit, and the at least one solenoid magnet of the beam guidance system is a superconducting solenoid magnet. 1. A particle beam treatment system comprising:a beam generation unit for generating a beam of charged particles, in particular ions, preferably protons, anda beam guidance system,wherein the beam guidance system seen in the direction of the beam of charged particles behind the beam generation unit has at least one solenoid magnet as a beam shaping unit, and the at least one solenoid magnet of the beam guidance system is a superconducting solenoid magnet.2. A particle beam treatment system according to claim 1 ,wherein at least one solenoid magnet of the beam guidance system is provided directly behind the beam generation unit.3. A particle beam treatment system according to claim 1 ,wherein the beam guidance system has an energy correction unit for adjusting the energy of the charged particles of the beam of charged particles and at least one solenoid magnet of the beam guidance system seen in the direction of the beam of charged particles is provided between the beam generation unit and the energy correction unit and/or at least one solenoid magnet of the beam guidance system seen in the direction of the beam of charged particles is provided behind the energy correction unit.4. A particle beam treatment system according to claim 1 ,wherein the beam guidance system has at least two solenoid magnets seen in the direction of the beam of charged particles behind the beam generation unit.5. ...

Scanning Charged Particle Microscope, Image Acquisition Method, and Electron Detection Method

A scanning charged particle microscope is offered which can selectively detect and image electrons. The scanning charged particle microscope () has: a source () of a charged particle beam (E); an objective lens () for bringing the charged particle beam (E) emitted from the source () into focus at a sample (S); a scanning deflector () for scanning the focused charged particle beam (E) over the sample (S); a sorting portion () for sorting out electrons emitted at given emission angles from electrons released from the sample (S) in response to irradiation of the sample (S) by the charged particle beam (E); an electron deflector () for producing a deflecting field to deflect the electrons (E) sorted out according to their energy; a detection portion () for detecting the electrons (E) deflected by the electron deflector (); and an image creating portion () for creating an image, based on the results of the detection performed by the detection portion ().

ABERRATION-CORRECTED MULTIBEAM SOURCE, CHARGED PARTICLE BEAM DEVICE AND METHOD OF IMAGING OR ILLUMINATING A SPECIMEN WITH AN ARRAY OF PRIMARY CHARGED PARTICLE BEAMLETS

A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen. 1. A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets , comprising:a charged particle beam source to generate a primary charged particle beam;a multi-aperture plate having at least two openings to generate an array of primary charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen;an aberration correction element, provided between the charged particle beam source and the multi-aperture plate, to correct at least one of spherical aberrations and chromatic aberrations of rotationally symmetric charged particle lenses, and to correct the difference between the first resolution on the specimen and the second resolution on the specimen, the aberration correction element comprising two electric or magnetic quadrupole elements and at least two multipole elements, the at least two multipole elements comprising two combined electric-magnetic quadrupole elements; andan objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate ...

APPARATUS AND METHOD FOR MEASURING ENERGY SPECTRUM OF BACKSCATTERED ELECTRONS

The present invention relates to an apparatus and method for analyzing the energy of backscattered electrons generated from a specimen. The apparatus includes: an electron beam source () for generating a primary electron beam; an electron optical system () configured to direct the primary electron beam to a specimen while focusing and deflecting the primary electron beam; and an energy analyzing system configured to detect an energy spectrum of backscattered electrons emitted from the specimen. The energy analyzing system includes: a Wien filter () configured to disperse the backscattered electrons; a detector () configured to measure the energy spectrum of the backscattered electrons dispersed by the Wien filter (); and an operation controller () configured to change an intensity of a quadrupole field of the Wien filter (), while moving a detecting position of the detector () for the backscattered electrons in synchronization with the change in the intensity of the quadrupole field. 1. An apparatus comprising:an electron beam source configured to generate a primary electron beam;an electron optical system configured to direct the primary electron beam to a specimen while focusing and deflecting the primary electron beam; andan energy analyzing system configured to detect an energy spectrum of backscattered electrons emitted from the specimen, a Wien filter configured to disperse the backscattered electrons;', 'a detector configured to measure the energy spectrum of the backscattered electrons dispersed by the Wien filter; and', 'an operation controller configured to change an intensity of a quadrupole field of the Wien filter, while moving a detecting position of the detector for the backscattered electrons in synchronization with the change in the intensity of the quadrupole field., 'the energy analyzing system including2. The apparatus according to claim 1 , wherein the operation controller is configured to change the intensity of the quadrupole field of the Wien ...

Electron microscope with improved imaging resolution

Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising an outer tube of electrically insulating material, and an inner skin of electrically conductive material with an electrical conductivity σ and a thickness t, with σt<0.1 Ω −1 .

METHOD FOR AUTOMATIC CORRECTION OF ASTIGMATISM

The method is for automatic astigmatism correction of a lens system. A first image is provided that is not in focus at a first stigmator setting of a set of lenses. A calculating device calculates a corresponding first Fourier spectrum image. A distribution and direction of pixels of the Fourier spectrum image are determined by calculating a first vector and a second vector. The first vector is compared with the second vector. The lens system is changed from a first stigmator setting to a second stigmator setting to provide a second image. A corresponding Fourier spectrum image is calculated. The distribution and direction of pixels of the second Fourier spectrum image is determined by calculating a third vector and a fourth vector. The third vector is compared to the fourth vector. The image that has the lowest vector ratio is selected. 1. A method for automatic astigmatism correction of a lens system , comprising ,providing a first image of a view not being in focus at a first stigmator setting of a lens,based on the first image at the first stigmator setting,a calculating device calculating a first Fourier spectrum image,determining a distribution and directions of intensities in the image by calculating a first vector and a second vector,comparing the first vector with the second vector, changing the lens from the first stigmator setting to a second stigmator setting to provide a second image of the view not being in focus, the second image at the second stigmator setting being of the same view as the first image of the view at the first stigmator setting,the calculating device, calculating a second Fourier spectrum image based on the second image at the second stigmator setting,determining the distribution and directions of intensities in the second Fourier spectra image by calculating a third vector and a fourth vector,comparing the third vector with the fourth vector,when the first vector is more similar to the second vector than the third vector is to the ...

CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD

A charged particle beam writing apparatus includes a stage configured to mount a sample placed thereon; an electron optical column including a charged particle gun and deflector, wherein the charged particle gun is configured to emit a charged particle beam, and the deflector includes a plurality of deflecting electrodes configured to control a path of the charged particle beam; an ozone introducing mechanism configured to introduce ozone into the electron optical column; a first voltage supply unit configured to apply a deflection voltage to the plurality of deflecting electrodes to deflect the charged particle beam; and a second voltage supply unit configured to apply an identical negative DC voltage to the plurality of deflecting electrodes, wherein a negative voltage in which the deflection voltage and the negative DC voltage are added is applied to the plurality of deflecting electrodes while the sample is irradiated by the charged particle beam.

Device and Method for Computing Angular Range for Measurement of Aberrations and Electron Microscope

A device which computes an angular range of illumination of an electron beam in which aberrations in an optical system can be measured efficiently by a tableau method. The device () includes an aberration coefficient information acquisition portion () for obtaining information about aberration coefficients of the optical system, a phase distribution computing portion () for finding a distribution of phases in the electron beam passed through the optical system on the basis of the information about the aberration coefficients, and an angular range computing portion () for finding the angular range of illumination on the basis of the distribution of phases found by the phase distribution computing portion (). 1. A device for computing an angular range of illumination of an electron beam when aberrations in an optical system are measured by a tableau method , said device comprising:an aberration coefficient information acquisition portion for obtaining information about aberration coefficients of the optical system;a phase distribution computing portion for finding a distribution of phases in the electron beam passed through the optical system on the basis of the information about the aberration coefficients; andan angular range computing portion for finding the angular range of illumination on the basis of the distribution of phases found by the phase distribution computing portion.3. The device for computing an angular range as set forth in claim 2 , wherein said angular range computing portion sets the upper limit of said angular range of illumination to be equal to or greater than an angle of illumination at which phases in the distribution of phases found by said phase distribution computing portion have absolute values of π/4 or π/2.4. The device for computing an angular range as set forth in claim 1 , wherein said optical system is an imaging system.5. The device for computing an angular range as set forth in claim 1 , wherein said optical system is an ...

Systems and methods for electron beam focusing in electron beam additive manufacturing

A system for melting, sintering, or heat treating a material is provided. The system includes a cathode, an anode, and a focus coil assembly having a quadrupole magnet. The quadrupole magnet includes four poles and a yoke. The four poles are spaced apart and surround a beam cavity. Each of the four poles includes a pole face proximate the beam cavity and an end opposite the pole face. The first and third poles are aligned along an x-axis and configured to have a first magnetic polarity at their respective pole faces and a second magnetic polarity opposite the first magnetic polarity at their respective ends. The second and fourth poles are aligned along a y-axis and configured to have the second magnetic polarity at their respective pole faces and the first magnetic polarity at their respective ends. The yoke surrounds the poles and is coupled to the poles.

Multistage-Connected Multipole, Multistage Multipole Unit, and Charged Particle Beam Device

Provided are a multistage-connected multipole and a charged particle beam device that can be produced with precision in machining without requiring precision in brazing between a pole and an insulation material. This multi-stage connected multipole comprises: a plurality of poles Q-Q that are arranged along the optical-axis direction of a charged particle beam, and that have cutouts Non surfaces facing each other; and braces P-P that are arranged between the plurality of poles Q-Q and are made of an insulator. The poles Q-Q and the braces P-P are joined by fitting the braces P-P into the cutouts N and applying brazing so as to be interposed by a bonding material. 1. A multistage-connected multipole comprising:a plurality of poles disposed along an optical axis direction of a charged particle beam and having a notch in opposed surfaces; anda pillar disposed between the poles and comprised of an insulator,wherein the poles and the pillars are joined with each other in the notches via a joining material.2. A multistage-connected multipole according to claim 1 , further comprising:a cap joined to the notch via the joining material,wherein the pillar is joined to the pole via the cap.3. The multistage-connected multipole according to claim 2 ,wherein the pillar and the cap include a protruded portion and a recessed portion that can be engaged with each other.4. The multistage-connected multipole according to claim 1 ,wherein a material of an insulator constituting the pillar is ceramic, andwherein the joining material is a brazing material.5. The multistage-connected multipole according to claim 1 ,wherein a plurality of end faces of the poles at least on one end side are in a shape in accordance with one plane.6. The multistage-connected multipole according to claim 5 ,wherein before the pillar is joined via the joining material, the poles are connected to one connecting portion and are formed as a single pole base material together with the connecting portion.7. The ...

Deflection Scanning Device with Multi-phase Winding and Deflection Scanning System

The present invention relates to a deflection scanning device with a multi-phase winding and a deflection scanning system. The deflection scanning device is of an axisymmetric structure, and comprises a ferromagnetic frame and a deflection scanning winding, wherein the inner side of the ferromagnetic frame is longitudinally provided with 2aw wire slots equally distributed along the circumference; and the deflection scanning winding comprises a w-phase winding, wherein the axis of the each phase winding is symmetrically distributed. The deflection scanning system comprises a deflection scanning device, a drive power supply unit and, a central, control unit. The deflection scanning device of the present invention can improve the uniformity of the magnetic induction intensity in the charged particle beam channel, and then reduce the defocusing effect and improve the scanning accuracy.

HIGH-CURRENT ION IMPLANTER AND METHOD FOR CONTROLLING ION BEAM USING HIGH-CURRENT ION IMPLANTER

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens. 1. An ion implantation system , comprising:an electrostatic lens receiving an ion beam, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line; anda power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.2. The ion implantation system of claim 1 , further comprising a plasma flood gun positioned between the electrostatic lens and a wafer claim 1 , wherein the plasma flood gun and the wafer are oriented at an angle relative to the ion beam line.3. The ion implantation system of claim 2 , wherein the wafer is grounded claim 2 , and wherein a mass analyzer and a collimator along the ion beam line are at a positive potential.4. The ion implantation system of claim 3 , wherein the ...

CHARGED PARTICLE BEAM APPARATUS

In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (), scanning deflectors ( and ) configured to scan a charged particle beam () emitted from the charged particle gun () onto a sample (), detectors ( and ) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit () configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller () configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates. 1. A charged particle beam apparatus comprising:a charged particle gun;a scanning deflector configured to scan a charged particle beam emitted from the charged particle gun onto a sample;a detector configured to detect a scanning control voltage, which is input from an outside into the scanning deflector and is different from the scanning control voltage;an arithmetic unit configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam;an irradiation controller configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.2. The charged particle beam apparatus of claim 1 , further comprising:a secondary particle detector configured to detect secondary particles released from the sample by irradiation with the charged particle beam;a signal processor configured to perform imaging for secondary particle data output from the secondary particle detector according to the irradiation pixel coordinates; andan image display unit configured to display a secondary particle image ...

Method and apparatus for directing a neutral beam

The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.

Apparatus of Plural Charged-Particle Beams

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens. 1. A multi-beam apparatus for observing a surface of a sample , comprising:an electron source;a condenser lens below said electron source;a source-conversion unit below said condenser lens;an objective lens below said source-conversion unit;a deflection scanning unit below said source-conversion unit;a sample stage below said objective lens;a beam separator below said source-conversion unit;a secondary projection imaging system; and wherein said electron source, said condenser lens and said objective lens are aligned with a primary optical axis of said apparatus, and said sample stage sustains said sample so that said surface faces to said objective lens,', 'wherein said source-conversion unit comprises a beamlet-forming means with a plurality of beam-limit openings and an image-forming means with a plurality of electron optics elements,', 'wherein said electron source generates a primary-electron beam along said primary optical axis, and said primary-electron beam is focused by said condenser lens to become a substantially parallel beam and then incident into said source-conversion unit,', 'wherein a plurality of beamlets of said primary-electron beam exits from said source-conversion unit, said ...

Annular cooling fluid passage for magnets

A magnet having an annular coolant fluid passage is generally described. Various examples provide a magnet including a first magnet and a second magnet disposed around an ion beam coupler with an aperture there through. The first and second magnets each including a metal core having a cavity therein, one or more conductive wire wraps disposed around the metal core, and an annular core element configured to be inserted into the cavity, wherein an annular coolant fluid passage is formed between the cavity and the annular core element. Furthermore, the annular core element may have a first diameter and a middle section having a second diameter, the second diameter being less than the first diameter. Other embodiments are disclosed and claimed.

ABERRATION-CORRECTED MULTIBEAM SOURCE, CHARGED PARTICLE BEAM DEVICE AND METHOD OF IMAGING OR ILLUMINATING A SPECIMEN WITH AN ARRAY OF PRIMARY CHARGED PARTICLE BEAMLETS

A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen. 121.-. (canceled)22. A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets , comprising:a charged particle beam source to generate a primary charged particle beam;a multi-aperture plate having at least two openings to generate an array of primary charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen;an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotationally symmetric charged particle lenses, the aberration correction element being arranged such that the primary charged particle beamlets enter the aberration correction element at a first end and exit at an opposite end; andan objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.23. The charged particle beam device according to claim 22 , wherein the aberration correction element is configured to correct the difference between the first resolution on the specimen and the second ...

Enabling High Throughput Electron Channeling Contrast Imaging (ECCI) by Varying Electron Beam Energy

Techniques for high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy are provided. In one aspect, a method for ECCI of a crystalline wafer includes: placing the crystalline wafer under an electron microscope having an angle of less than 90° relative to a surface of the crystalline wafer; generating an electron beam, by the electron microscope, incident on the crystalline wafer; varying an accelerating voltage of the electron microscope to access a channeling condition of the crystalline wafer; and obtaining an image of the crystalline wafer. A system for ECCI is also provided. 1. A method for electron channeling contrast imaging (ECCI) of a crystalline wafer , the method comprising the steps of:placing the crystalline wafer under an electron microscope having an angle of less than 90° relative to a surface of the crystalline wafer;generating an electron beam, by the electron microscope, incident on the crystalline wafer;varying an accelerating voltage of the electron microscope to access a channeling condition of the crystalline wafer; andobtaining an image of the crystalline wafer.2. The method of claim 1 , further comprising the step of:varying the accelerating voltage in increments of from about 0.01 kV to about 0.1 kV and ranges therebetween to fine-tune imaging conditions.3. The method of claim 1 , wherein the angle is from about 80° to about 89.5° and ranges therebetween.4. The method of claim 1 , wherein the angle is fixed.5. The method of claim 1 , wherein the crystalline wafer has a diameter of greater than or equal to about 300 millimeters (mm).6. The method of claim 1 , further comprising the step of:varying the accelerating voltage of the electron microscope to access at least one different channeling condition of the crystalline wafer.7. The method of claim 1 , further comprising the step of:changing an orientation of the crystalline wafer to access at least one different channeling condition of the crystalline ...

Beam Irradiation Device

The present disclosure aims at proposing a multi-beam irradiation device capable of correcting off-axis aberrations. In order to achieve the above object, a beam irradiation device is proposed, which includes a beam source which emits a plurality of beams; an objective lens () which focuses a beam on a sample; a first lens () which is arranged such that a lens main surface is positioned at an object point of the objective lens and deflects a plurality of incident beams toward an intersection point of a lens main surface of the objective lens and an optical axis; a second lens () which is arranged closer to a beam source side than the first lens and focuses the plurality of beams on a lens main surface of the first lens; and a third lens () which is arranged closer to the beam source side than the second lens and deflects the plurality of beams toward an intersection point of a lens main surface of the second lens and the optical axis. 1. A beam irradiation device comprising:a chip configured to emit an electron;an aperture lens array formed of a plurality of electrodes having a plurality of openings configured to divide a beam emitted from the chip into a plurality of beams;one or more power supplies configured to apply a voltage to at least one of the plurality of electrodes; anda first lens arranged on a side closer to a sample than the aperture lens array or arranged between the chip and the aperture lens array, the first lens being configured to focus a beam emitted from the chip,wherein an intensity of the first lens and an intensity of the aperture lens array are adjusted so that the beam divided after passing through the aperture lens array focus on a same plane perpendicular to an optical axis.2. The beam irradiation device according to claim 1 ,wherein a radius of an opening of an electrode disposed nearest to a chip side among the plurality of electrodes is not more than half of a radius of the opening of other electrodes.3. The beam irradiation device ...

ELECTRON BEAM EQUIPMENT

To improve the efficiency of generation of chromatic aberrations of an energy filter for reducing energy distribution. Mounted are an energy filter for primary electrons, the energy filter having a beam slit and a pair of a magnetic deflector and an electrostatic deflector that are superimposed with each other. An electron lens is arranged between the beam slit and the pair of the magnetic deflector and the electrostatic deflector. 1. Electron beam equipment comprising:an electron gun configured to emit primary electrons;an energy filter configured to pass electrons with predetermined energy;a stage configured to hold a sample; andan objective lens configured to irradiate the sample held on the stage with the primary electrons that have passed through the energy filter, whereinthe energy filter includes a beam slit and a pair of a magnetic deflector and an electrostatic deflector that are superimposed with each other, and an electron lens is provided between the beam slit and the pair of the magnetic deflector and the electrostatic deflector.2. The electron beam equipment according to claim 1 , whereinthe energy filter includes two pairs each having a magnetic deflector and an electrostatic deflector that are superimposed with each other, the two pairs being arranged with the beam slit interposed therebetween, andan electron lens is provided between the beam slit and at least one pair of the magnetic deflector and the electrostatic deflector.3. The electron beam equipment according to claim 1 , whereinthe energy filter includes two pairs each having a magnetic deflector and an electrostatic deflector that are superimposed with each other, the two pairs being arranged with the beam slit interposed therebetween, andelectron lenses are respectively provided between the beam slit and the two pairs each having the magnetic deflector and the electrostatic deflector.4. The electron beam equipment according to claim 1 , wherein the electron lens is one of a magnetic lens or ...

CHARGED PARTICLE BEAM APPARATUS

A charged particle beam apparatus includes a charged particle source, a separator, a charged particle beam irradiation switch, and a control device. The separator is inserted into a charged particle optical system and deflects a traveling direction of a charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system. The charged particle beam irradiation switch absorbs the charged particle beam deflected out of the optical axis of the charged particle optical system or reflects the charged particle beam toward the separator. The control device controls a charged particle beam irradiation switch. 1. A charged particle beam apparatus , comprising:a charged particle source;a stage on which a sample is placed;a charged particle optical system configured to irradiate the sample with a charged particle beam generated in the charged particle source;a separator which is inserted in the charged particle optical system and deflects a traveling direction of the charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system;a charged particle beam irradiation switch configured to absorb the charged particle beam deflected out of the optical axis of the charged particle optical system or reflect the charged particle beam toward the separator, anda control device configured to control the charged particle beam irradiation switch.2. The charged particle beam apparatus according to claim 1 ,wherein, the charged particle beam irradiation switch has a charged particle beam reflection control electrode, and{'sub': 0', 'on', '0', 'off', '0, 'when a voltage such that velocity energy of the charged particle beam traveling in a direction of the charged particle beam reflection control electrode becomes zero is denoted by |V|, the control device controls ...

SYSTEMS AND METHODS FOR COMPENSATING DISPERSION OF A BEAM SEPARATOR IN A SINGLE-BEAM OR MULTI-BEAM APPARATUS

Systems and methods are provided for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus. Embodiments of the present disclosure provide a dispersion device comprising an electrostatic deflector and a magnetic deflector configured to induce a beam dispersion set to cancel the dispersion generated by the beam separator. The combination of the electrostatic deflector and the magnetic deflector can be used to keep the deflection angle due to the dispersion device unchanged when the induced beam dispersion is changed to compensate for a change in the dispersion generated by the beam separator. In some embodiments, the deflection angle due to the dispersion device can be controlled to be zero and there is no change in primary beam axis due to the dispersion device. 1. A charged particle beam apparatus comprising:a source configured to provide a primary charged particle beam;a source conversion unit configured to form a plurality of parallel images of the source using a plurality of beamlets of the primary charged particle beam;a first projection system with an objective lens and configured to project the plurality of parallel images onto a sample and therefore form a plurality of primary probe spots thereon with the plurality of beamlets;a beam separator configured to separate the plurality of beamlets and a plurality of secondary charged particle beams generated from the sample by the plurality of primary probe spots;a detection device with a plurality of detection elements;a secondary projection system configured to focus the plurality of secondary charged particle beams onto the detection device and form a plurality of secondary probe spots thereon, and the plurality of secondary probe spots are detected by the plurality of detection elements; and 'wherein the first dispersion device comprises a first electrostatic deflector and a first magnetic deflector respectively exerting a first force and a second force on each of the plurality of ...

SYSTEM COMBINATION OF A PARTICLE BEAM SYSTEM AND A LIGHT-OPTICAL SYSTEM WITH COLLINEAR BEAM GUIDANCE, AND USE OF THE SYSTEM COMBINATION

A system combination includes a particle beam system and a light-optical system. The particle beam system can be an individual particle beam system or a multiple particle beam system. A light entry mechanism can provided at a branching site of a beam tube arrangement within a beam switch. A light beam of the light-optical system can enter into the beam tube arrangement through the light entry mechanism such that the light beam impinges, in substantially collinear fashion with particle radiation, on an object to be inspected. Parts of the light-optical beam path and parts of the particle-optical beam path can extend parallel to one another or overlap with one another. This arrangement can allow light of the light-optical system to be incident in perpendicular fashion on an object to be inspected, optionally without impairing the particle-optical resolution of the particle beam system. 1. A system combination , comprising: a multi-beam particle source configured to generate a first field of a multiplicity of first particle beams;', 'a first particle-optical unit having a first particle-optical beam path, the first particle-optical unit configured so that, during use of the system combination, the first particle-optical unit directs the first particle beams onto an object plane so that the first particle beams impinge the object plane sites of incidence forming a second field;', 'a detector unit comprising a plurality of detection regions disposed in a third field;', 'a second particle-optical unit having a second particle-optical beam path, the second particle-optical unit being configured so that, during use of the system combination, the second particle-optical unit images second particle beams, which emanate from the sites of incidence in the second field, onto the third field;', 'a particle-optical objective lens configured so that, during use of the system combination, the first and the second particle beams pass through the particle-optical objective lens;', 'a ...

TECHNIQUES AND APPARATUS FOR ANISOTROPIC METAL ETCHING

In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; and exposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer. 1. A method for etching a copper layer disposed on a substrate , comprising:directing an ion beam comprising reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; andexposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer.2. The method of claim 1 , wherein the reactive ions comprise oxygen.3. The method of claim 1 , wherein the molecular species is an acetic acid based species.4. The method of claim 3 , wherein the molecular species comprises an acetylacetonate.5. The method of claim 3 , further comprising providing the ions at an ion dose and ion energy to form a CuO composition within the altered layer.6. The method of claim 1 , wherein the reactive ions comprise hydrogen.7. The method of claim 6 , wherein the molecular species comprise arsine claim 6 , trimethylarsine claim 6 , phosphine claim 6 , or trimethylphosphine.8. The method of claim 6 , wherein the molecular species further comprises an aromatic claim 6 , cyclic claim 6 , alkene or alkyne ligand.9. The method of claim 1 , wherein the directing the ion beam comprises:providing an extraction plate between the substrate and a plasma chamber that contains a plasma comprising the reactive ions; andextracting the reactive ions through an extraction aperture of the extraction plate, ...

MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD OF ADJUSTING THE SAME

In one embodiment, a multi charged particle beam writing apparatus includes an emitter that emits a charged particle beam, an aperture plate in which a plurality of openings are formed and that forms multiple beams by allowing the charged particle beam to pass through the plurality of openings, a blanking plate provided with a plurality of blankers that each perform blanking deflection on a corresponding beam included in the multiple beams, a stage on which a substrate irradiated with the multiple beams, a detector that detects a reflection charged particle from the substrate, feature amount calculation circuitry that calculates a feature amount of an aperture image based on a detection value of the detector, and aberration correction circuitry that corrects aberration of the charged particle beam based on the feature amount. 1. A multi charged particle beam writing apparatus comprising:an emitter that emits a charged particle beam;an aperture plate in which a plurality of openings are formed and that forms multiple beams by allowing the charged particle beam to pass through the plurality of openings;a blanking plate provided with a plurality of blankers that each perform blanking deflection on a corresponding beam included in the multiple beams;a limitation aperture plate that blocks each of beams deflected by the plurality of blankers so as to enter a beam-OFF state;a stage on which a substrate irradiated with the multiple beams;a detector that detects a reflection charged particle from the substrate;feature amount calculation circuitry that calculates a feature amount of an aperture image based on a detection value of the detector; andaberration correction circuitry that corrects aberration of the charged particle beam based on the feature amount.2. The apparatus according to claim 1 , whereinthe feature amount calculation circuitry generates an approximate graphic that approximates the aperture image, and calculates the feature amount using an area of the ...

HYBRID ELECTROSTATIC LENS WITH INCREASED NATURAL FREQUENCY

A composite electrostatic rod may include a body comprising a length L and cross sectional area A. The body may include an outer portion comprising a first material, and a core comprising a second material different than the first material and surrounded by the outer portion, wherein a natural frequency of the composite electrostatic rod is greater than that of a graphite rod having the length L and cross sectional area A. 1. A composite electrostatic rod for use in an electrostatic lens , for controlling an ion beam for ion implantation , comprising:a body having a length L and cross sectional area A, the body comprising:an outer portion comprising an upper shell and a lower shell fastened together, the upper and lower shells formed of a first material; anda core formed from a second material different than the first material and surrounded by the outer portion, wherein a natural frequency of the composite electrostatic rod is greater than that of a graphite rod having the length L and cross sectional area A.2. The composite electrostatic rod of claim 1 , comprising a strength-to-weight ratio greater than that of the graphite rod having the length L and the cross sectional area A.3. The composite electrostatic rod of claim 1 , wherein the outer portion has an inner surface and the core has an outer surface claim 1 , the inner surface and outer surface being in direct contact along the entire length of the body.4. The composite electrostatic rod of claim 1 , further comprising a hollow region between the core and the outer portion.5. The composite electrostatic rod of claim 1 , wherein the first material comprises graphite or silicon and the second material comprises aluminum claim 1 , steel or carbon composite.6. The composite electrostatic rod of claim 1 , further comprising a plurality of fasteners extending from the outer portion to the core and operable to fix the core to the outer portion.7. The composite electrostatic rod of claim 1 , the outer portion ...

CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD, AND PATTERN FORMING METHOD

In one embodiment, a charged particle beam writing apparatus includes an estimator calculating an estimated value of a process parameter of a processing device at a scheduled timing at which a substrate as an object of pattern correction is processed in the processing device from a history of the process parameter of the processing device which performs a process after pattern writing, a predictor predicting dimension distribution of a pattern formed on the substrate by the processing device performing the process with the estimated value, a corrector correcting a design dimension based on the predicted dimension distribution, and a writer irradiating the substrate with a charged particle beam and writing the pattern based on the dimension corrected by the corrector. 1. A charged particle beam writing apparatus comprising:an estimator calculating an estimated value of a process parameter of a processing device at a scheduled timing at which a substrate as an object of pattern correction is processed in the processing device from a history of the process parameter of the processing device which performs a process after pattern writing;a predictor predicting dimension distribution of a pattern formed on the substrate by the processing device performing the process with the estimated value;a corrector correcting a design dimension based on the predicted dimension distribution; anda writer irradiating the substrate with a charged particle beam and writing the pattern based on the dimension corrected by the corrector.2. The apparatus according to claim 1 , further comprising a determinator comparing an actual process parameter in the processing device processing the substrate where the pattern is written at the scheduled timing and the estimated value claim 1 , and determining whether a dimensional variation caused by the processing device is occurred in the pattern on the substrate processed in the processing device based on a result of the comparison.3. The apparatus ...

CHARGED PARTICLE BEAM DEVICE

A charged particle beam device includes a deflection unit that deflects a charged particle beam released from a charged particle source to irradiate a sample, a reflection plate that reflects secondary electrons generated from the sample, and a control unit that controls the deflection unit based on an image generated by detecting the secondary electrons reflected from the reflection plate. The deflection unit includes an electromagnetic deflection unit that electromagnetically scans with the charged particle beam by a magnetic field and an electrostatic deflection unit that electrostatically scans with the charged particle beam by an electric field. The control unit controls the electromagnetic deflection unit and the electrostatic deflection unit, superimposes an electromagnetic deflection vector generated by the electromagnetic scanning and an electrostatic deflection vector generated by the electrostatic scanning, and controls at least a trajectory of the charged particle beam. 1. A charged particle beam device , comprising:a deflection unit that deflects a charged particle beam emitted from a charged particle source to irradiate a sample;a reflection plate that reflects secondary electrons generated from the sample; anda control unit that controls the deflection unit based on an image generated by detecting the secondary electron reflected from the reflection plate, whereinthe deflection unit includes an electromagnetic deflection unit that electromagnetically performs scanning with the charged particle beam by a magnetic field and an electrostatic deflection unit that electrostatically performs scanning with the charged particle beam by an electric field,the control unit controls the electromagnetic deflection unit and the electrostatic deflection unit, superimposes an electromagnetic deflection vector generated by the electromagnetic scanning and an electrostatic deflection vector generated by the electrostatic scanning, and controls a trajectory of the ...

Particle-optical corrector which is free from axial aberrations of sixth order and electron microscope with corrector

A corrector has a strength of a central hexapole field (Ψ) which is selected such that the threefold axial astigmatism (A) vanishes and the strengths of two equal outer hexapole fields (Ψ) are selected such that the overall corrector () does not have a sixfold axial astigmatism (As). The length (L) of the central multipole element () in relation to the lengths (L) of the multipole elements ( and ) is chosen such that the axial three-lobed aberration of sixth order (D) vanishes. A separation between the outer multipole elements ( and ) and round lenses (″) further spaced apart from a symmetry plane () of the corrector corresponds to the focal length (f′) of those round lenses (″) plus an additional separation (Δz) which is chosen such that the axial three-lobed aberration of fourth order (D) vanishes for the given lengths L and L′. 118.-. (canceled)19. A particle-optical corrector for correcting spherical aberrations of an electron microscope , thereby preventing a threefold axial astigmatism , an axial three-lobed aberration of fourth order and a sixfold axial astigmatism , wherein the corrector comprises:a first outer multipole element of length L′ for generating a first hexapole field;a second central multipole element of length L for generating a second hexapole field in a symmetry plane of the corrector;a third outer multipole element of length L′ for generating a third hexapole field, wherein said first outer multipole element and said third outer multipole element are identical and said first and said third hexapole fields have identical strengths, wherein a strength of said second hexapole field is selected with respect to strengths of said first and said third hexapole fields such that the threefold axial astigmatism vanishes, said strengths of said first and said third hexapole fields thereby being selected such that the corrector does not have the sixfold axial astigmatism;a first round lens doublet having a first doublet first round lens and a first ...

Method and System for Edge-of-Wafer Inspection and Review

An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample. 1. A electron-optical system comprising:an electron beam source configured to generate one or more electron beams;a sample stage configured to secure a sample;an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;a sample position reference device disposed about the sample;a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields, wherein one or more characteristics of the guard ring device are adjustable; anda detector assembly configured to detect electrons emanating from the surface of the sample.2. The system of claim 1 , wherein the guard ring device comprises:a conductive ring structure.3. The system of claim 1 , wherein the guard ring device comprises:a ring structure coated with a conductive material.4. The system of claim 1 , wherein the one or more adjustable characteristics of the guard ring device comprises:a height of the guard ring device.5. The system of claim 4 , wherein the one or more adjustable characteristics of the guard ring ...

THIN FILM TRANSISTOR

A method for manufacturing a patterned layer includes the steps of: providing a substrate having a first surface and a second surface opposite to the first surface; providing a material source for supplying a plurality of charged particles, in which the first surface faces the material source; providing a magnetic element, in which the second surface is arranged between the magnetic element and the first surface; and depositing the charged particles on the first surface through using the magnetic element so as to form a patterned layer. A method for manufacturing an electrochromic device is disclosed as well. 1. A method for manufacturing a patterned layer , comprising:providing a substrate having a first surface and a second surface opposite to the first surface;providing a material source for supplying a plurality of charged particles, wherein the first surface of the substrate faces the material source;providing a magnetic element, wherein the second surface is arranged between the magnetic element and the first surface; anddepositing the charged particles on the first surface by utilizing the magnetic element, and thereby forming a patterned layer.2. The method according to claim 1 , wherein the step of depositing the charged particles on the first surface comprises depositing the charged particles to form a layer having different thicknesses on at least two regions of the first surface so as to form the patterned layer.3. The method according to claim 1 , wherein the magnetic element comprises a first magnetic element and a second magnetic element claim 1 , and a direction of the magnetic moment of the first magnetic element is different form a direction of the magnetic moment of the second magnetic element.4. The method according to claim 3 , wherein the direction of the magnetic moment of the first magnetic element is opposite to the direction of the magnetic moment of the second magnetic element.5. The method according to claim 1 , wherein the magnetic ...

SYSTEM AND METHOD FOR BARE WAFER INSPECTION

A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

System and Method for Learning-Guided Electron Microscopy

A system and method is provided for rapidly collecting high quality images of a specimen through controlling a re-focusable beam of an electron microscope. An intelligent acquisition system instructs the electron microscope to perform an initial low-resolution scan of a sample. A low-resolution image of the sample is received by the intelligent acquisition system as scanned image information from the electron microscope. The intelligent acquisition system then determines regions of interest within the low-resolution image and instructs the electron microscope to perform a high-resolution scan of the sample, only in areas of the sample corresponding to the determined regions of interest or portions of the determined regions of interest, so that other regions within the sample are not scanned at high-resolution, where the high-resolution scanning in the regions of interest is guided by a probability map using a deep neural network for segmentation.

SAMPLE HOLDER FOR SCANNING ELECTRON MICROSCOPE, SCANNING ELECTRON MICROSCOPE IMAGE OBSERVATION SYSTEM, AND SCANNING ELECTRON MICROSCOPE IMAGE OBSERVATION METHOD

A water solution in which an observation sample is, for example, dissolved is sandwiched on a first insulative thin film side provided under a conductive thin film. When an electron beam incident part is charged minus, electric dipoles of water molecules are arrayed along a potential gradient. Electric charges are also generated on the surface of a second insulative thin film. The electric charges are detected by a terminal section and changes to a measurement signal. In a state in which an electron beam is blocked, the minus potential disappears. Consequently, the electric charges on the surface of the first insulative thin film also disappear, and the measurement signal output from the terminal section changes to 0. 1. A sample holder for a scanning electron microscope comprising:a first insulative thin film, one principal plane of which is a holding surface for an observation sample; anda conductive thin film stacked on another principal plane of the first insulative thin film, whereinon the one principal plane side of the first insulative thin film, a terminal section that detects a signal based on potential of the one principal plane of the first insulative thin film caused by an electron beam made incident from the conductive thin film side is provided.2. The sample holder for the scanning electron microscope according to claim 1 , whereina second insulative thin film is provided between the one principal plane of the first insulative thin film and the terminal section,one principal plane of the second insulative thin film and the one principal plane of the first insulative thin film are disposed to have a gap of a predetermined interval, andthe terminal section detects potential of the other principal plane of the second insulative thin film as a signal.3. The sample holder for the scanning electron microscope according to claim 1 , wherein thickness of the first insulative thin film is 200 nm or less.4. The sample holder for the scanning electron microscope ...

Accurate wavelength calibration in cathodoluminescence sem

A scanning electron microscope having a spectrometer with a sensor having a plurality of pixels, wherein the spectrometer directs different wavelengths of collected light onto different pixels. An optical model is formed and an error function is minimized to find values for the model, such that wavelength detection may be corrected using the model. The model can correct for errors generated by effects such as the motion of the electron beam over the specimen, aberrations introduced by optical elements, and imperfections of the optical elements. A correction function may also be employed to account for effects not captured by the optical model.

APPARATUS FOR MULTIPLE CHARGED-PARTICLE BEAMS

Systems and methods for observing a sample in a multi-beam apparatus are disclosed. A charged particle optical system may include a deflector configured to form a virtual image of a charged particle source and a transfer lens configured to form a real image of the charged particle source on an image plane. The image plane may be formed at least near a beam separator that is configured to separate primary charged particles generated by the source and secondary charged particles generated by interaction of the primary charged particles with a sample. The image plane may be formed at a deflection plane of the beam separator. The multi-beam apparatus may include a charged-particle dispersion compensator to compensate dispersion of the beam separator. The image plane may be formed closer to the transfer lens than the beam separator, between the transfer lens and the charged-particle dispersion compensator. 1. A charged particle optical system comprising:a first deflector array configured to deflect a plurality of beamlets of a primary charged particle beam generated by a source;a first lens configured to focus the plurality of beamlets to form a plurality of images of the source on an image plane; andan objective lens configured to project the plurality of images onto a sample and form a plurality of probe spots thereon.2. The charged particle optical system of claim 1 , further comprising:a beam separator configured to separate the plurality of beamlets and secondary charged particles emitted from the sample due to illumination by the plurality of probe spots.3. The charged particle optical system of claim 2 , wherein the image plane is at least near the beam separator.4. The charged particle optical system of claim 3 , wherein deflection angles of the plurality of beamlets deflected by the first deflector array are set to obtain a predetermined pitch of the plurality of probe spots and to decrease aberrations thereof.5. The charged particle optical system claim 1 , ...

CHARGED PARTICLE BEAM DEVICE AND ARITHMETIC DEVICE

It is possible to determine an optimal parasitic aberration adjustment amount even when the relationship of the parasitic aberration adjustment amount with respect to the field intensity of multiple poles changes nonlinearly. To this end, in the present invention, an aberration correction amount is computed by measuring an aberration coefficient of an optical unit of a charged particle beam device, and at the same time, the present value of a power supply control value applied to an aberration corrector is measured. Then, the parasitic aberration adjustment amount for suppressing the amount of a parasitic aberration generated in the aberration corrector is computed on the basis of the aberration correction amount and the present value of the power supply control value. 1. A charged particle beam device comprising:a charged particle source configured to emit a charged particle beam;a condenser lens configured to converge the charged particle beam;an aberration corrector having multiple stages of multiple poles and configured to correct an aberration of an optical unit;an aberration corrector controlling power supply configured to generate power to be applied to the multiple poles;an aberration coefficients estimation unit configured to measure an aberration coefficient of the optical unit;an aberration correction target estimation unit configured to compute an aberration correction amount on the basis of the aberration coefficient;an aberration corrector power output value measurement unit configured to measure a present value of a power supply control value applied to the multiple poles from the aberration corrector controlling power supply; andan arithmetic device configured to compute a power supply control value for aberration correction to be applied to the multiple poles on the basis of the measured value of the power supply control value and the aberration correction amount.2. The charged particle beam device according to claim 1 , wherein the arithmetic ...

METHOD FOR COINCIDENT ALIGNMENT OF A LASER BEAM AND A CHARGED PARTICLE BEAM

A method and apparatus for aligning a laser beam coincident with a charged particle beam. The invention described provides a method for aligning the laser beam through the center of an objective lens and ultimately targeting the eucentric point of a multi-beam system. The apparatus takes advantage of components of the laser beam alignment system being positioned within and outside of the vacuum chamber of the charged particle system. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. (canceled)22. A multi-beam system , comprising:a vacuum chamber;a workpiece support for supporting a workpiece within the vacuum chamber;a charged particle beam system for generating a beam of charged particles, said beam directed toward the workpiece;a laser beam system for generating a laser beam for processing the workpiece in the vacuum chamber;a focused ion beam system for generating a focused ion beam;an electron beam system for monitoring the material removal process;an objective lens;a laser beam alignment system that allows for the laser beam to be made through the center of the objective lens to target a eucentric point of the workpiece.23. The multi-beam system of in which the laser beam is operated at a fluence greater than an ablation threshold of the workpiece.24. The multi-beam system of in which the laser beam is a short claim 23 , nanosecond to femtosecond claim 23 , pulsed laser beam.25. The multi-beam system of in which the laser beam is operated at a fluence that reacts with the workpiece without ablation.26. The multi-beam system of in which the laser beam is a thermally induced chemical desorption process.27. The multi-beam system of in which the laser beam involves laser photochemistry.28. The multi-beam system of having at least one quad cell ...

METHOD AND SYSTEM FOR AUTOMATIC ZONE AXIS ALIGNMENT

Automatic alignment of the zone axis of a sample and a charged particle beam is achieved based on a diffraction pattern of the sample. An area corresponding to the Laue circle is segmented using a trained network. The sample is aligned with the charged particle beam by tilting the sample with a zone axis tilt determined based on the segmented area. 1. A method , comprising:directing a charged particle beam towards a sample;acquiring a diffraction pattern of the sample;using a trained network, segmenting the diffraction pattern and generating a segmented area of the diffraction pattern corresponding to a Laue circle; anddetermining a zone axis tilt based on the segmented area.2. The method of claim 1 , further comprising determining a shape of the segmented area claim 1 , and determining the zone axis tilt based on the segmented area responsive to the shape of the segmented area being a circle.3. The method of claim 1 , further comprising generating a second segmented area of the diffraction pattern corresponding to a direct beam using the trained network; and determining the zone axis tilt based further on the second area.4. The method of claim 1 , wherein the charged particle beam is a convergent charged particle beam.5. The method of claim 1 , wherein the charged particle beam is a parallel charged particle beam.6. The method of claim 1 , further comprising generating the trained network by training a network with multiple diffraction patterns acquired with the charged particle beam.7. The method of claim 1 , further comprising generating the trained network by training a network with multiple diffraction patterns of a second sample claim 1 , the second sample with a curvature less than the sample.8. The method of claim 7 , wherein training the network with the multiple diffraction patterns of the second sample includes:acquiring the multiple diffraction patterns of the second sample by tilting the second sample along two orthogonal axes with known tilt angles; ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. 124.-. (canceled)25. A charged-particle beam apparatus , comprising:a charged particle source configured to provide a primary beam;an image forming unit configured to form a plurality of images of the charged particle source using a plurality of beamlets of the primary beam;a first projection system with an objective lens and configured to form a plurality of probe spots on a sample from the plurality of beamlets;a second projection system configured to focus a plurality of secondary beams generated by the plurality of probe spots on the sample;a beam separator configured to separate the plurality of beamlets and the plurality of secondary beams; anda detection device with a plurality of detection elements configured to receive the plurality of secondary beams;wherein the second projection system includes an anti-rotation magnetic lens configured to eliminate a rotation of the plurality of secondary beams on the detection device.26. The charged-particle beam apparatus of claim 25 , wherein the first projection system includes a transfer lens to focus the plurality of beamlets to land on the sample perpendicularly.27. The charged-particle beam apparatus of claim 25 , further comprising:a deflection scanning unit configured to scan the plurality of probe spots on the sample.28. The charged-particle beam ...

Apparatus of Plural Charged Particle Beams with Multi-axis Magnetic Lenses

A new apparatus of plural charged particle beams with multi-axis magnetic lenses is provided, which comprises a plurality of sub-columns The apparatus employs two modified multi-axis magnetic lenses, and magnetic sub-lenses thereof therefore function as the objective lenses and the condenser lenses of all the sub-columns respectively. The plurality of sub-columns can perform the same function or different functions required for observing a surface of a specimen, such as high-throughput inspection and high-resolution review of interested features thereon. Accordingly, the apparatus can be used as a yield management tool in semiconductor manufacturing industry. 1. An apparatus of plural charged particle beams , comprising:a specimen stage for sustaining a specimen thereon; and a charged particle source unit for providing a primary charged particle beam propagating along an optical axis of said each sub-column;', 'a magnetic condenser lens under said charged particle source unit and aligned with said optical axis;', 'a beam-limit aperture plate having at least one first opening and under said magnetic condenser lens, wherein one of said at least one first opening is aligned with said optical axis and therefore functions as a beam-limit aperture;', 'a signal-charged-particle detector under said beam-limit aperture plate; and', 'a deflection scanning unit and a magnetic objective lens both under said signal-charged-particle detector and aligned with said optical axis,', 'wherein said magnetic condenser lens focuses said primary charged particle beam to get a desired current thereof after passing through said beam-limit aperture, said magnetic objective lens focuses said primary charged particle beam onto said observed surface, said signal-charged-particle detector detects secondary charged particle beam emanated from said observed surface where said primary charged particle beam impinges, and said deflection scanning unit deflects said primary charged particle beam to ...

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate. 1. An ion beam treatment or implantation system , comprising:an ion source emitting a plurality of parallel ion beams on a single plane having a given spacing, and wherein each of the plurality of parallel ion beams is point-shaped; anda first lens magnet having a non-uniform magnetic field receiving the plurality of ion beams from the ion source and focusing the plurality of ion beams toward a common point.2. The system of claim 1 , further comprising a deflector coupled to the ion source for deflecting the plurality of parallel ion beams for ion energy and mass separation.3. The system of claim 1 , wherein the ion source includes a plurality of magnetic deflectors and a resolving plate having a plurality of holes each associated with one of the magnetic deflectors claim 1 , said resolving plate configured to only pass through ions having a select mass to energy ratio.4. The system of claim 1 , wherein the ion source comprises:a microwave source;a waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings;a plasma chamber in communication with the waveguide conduit through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide conduit, said ...

Ion Milling Device and Ion Source Adjusting Method for Ion Milling Device

By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction. 1. An ion milling device configured to process a sample by irradiating the sample with an unfocused ion beam , the ion milling device comprising:a sample chamber;an ion source position adjustment mechanism provided at the sample chamber;an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit the ion beam; anda sample stage configured to rotate about a rotation center, whereinwhen a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.2. The ion milling device according to claim 1 , further comprising:a target plate provided on the sample stage and provided with a conductive material in a range including the rotation center; andan ammeter configured to measure an ion beam current received by the ...

Multi-pole deflector for charged particle beam and charged particle beam imaging apparatus

The invention provides a multi-pole deflector for a charged particle beam, and a charged particle beam imaging apparatus. The deflector includes a plurality of poles, including at least two pairs of poles, each pole in each pair of poles including a main body constructed in the form of a circular arc-shaped section and a protrusion projecting from an radial inner side of the main body. respective two main bodies of each pair of poles are arranged concentrically and diametrically opposite, and the at least two pairs of poles at least partially encompass and delimit a through-hole thereamong, which opens axially and is configured to receive and to pass therethrough the charged particle beam; and the at least two pairs of poles cooperate to generate respective secondary deflection fields distributed within the through-hole and across an internal space defined within the through-hole, respectively, and the secondary deflection fields are synthesized by combination of vectors into a resultant deflection field of the deflector which is distributed within and across the through-hole and is configured to deflect the charged particle beam passing therethrough.

Wien filter and charged particle beam imaging apparatus

A Wien filter and a charged particle beam imaging apparatus are provided. The Wien filter Wien filter, including a Wien filter body which includes: an electrostatic deflector, including at least one pair of electrodes, respective two electrodes in each pair of which are opposite to each other, each electrode including an electrode body constructed in an arc-shaped form, and respective electrode bodies of respective two electrodes in each pair of the at least one pair of electrodes being arranged concentrically with and opposite to each other in a diameter direction, and the at least one pair of electrodes being configured to generate respective electric fields by cooperation of the respective two electrodes in each pair of the at least one pair of electrodes, in the condition of respective bias voltages applied individually thereon; and a magnetic deflector, including at least one pair of magnetic poles, respective two magnetic poles in each pair of which are opposite to each other, each magnetic pole including a magnetic pole body constructed in an arc-shaped form, and respective magnetic pole bodies of respective two magnetic poles in each pair of the at least one pair of magnetic poles being arranged concentrically with and opposite to each other in the diameter direction, and the magnetic pole bodies of the at least one pair of magnetic poles in the magnetic deflector and the electrode bodies of the at least one pair of electrodes in the electrostatic deflector being arranged concentrically and spaced apart from each other in a circumferential direction, and the at least one pair of magnetic poles being configured to generate respective magnetic fields by cooperation of respective two magnetic poles in each pair of the at least one pair of magnetic poles; a resultant electric field formed collectively by all of the respective electric fields is perpendicular to a resultant magnetic field formed collectively by all of the respective magnetic fields; and each ...

CHARGED-PARTICLE MULTI-BEAM APPARATUS HAVING CORRECTION PLATE

In a pattern definition device for a charged-particle multi-beam processing or inspection apparatus comprises a deflection array device with an aperture array field for blanking a plurality of beamlets. The deflection array device comprises a plurality of deflection devices, each associated with a respective opening and comprising at least one electrostatic electrode for deflecting, when activated, the beamlet traversing the opening off its nominal path. However, one or more deflection devices may be defective, permanently unable to deflect their respective beamlets. To correct these “non-deflected beamlets” the pattern definition device comprises a filtering device having openings allowing passage of beamlets where the respective deflection devices are operative, and at least one obstructing device which is programmable to permanently assume an obstructing state where it prevents the respective non-deflected beamlets from traversing the pattern definition device along their respective nominal paths downstream of the pattern definition device. 1. A pattern definition device for use in a charged-particle multi-beam processing or inspection apparatus , said device comprising an aperture array field configured to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming a corresponding number of beamlets , each of the beamlets traversing the aperture array field along a respective beamlet path through the pattern definition device and extending downstream of the pattern definition device to a respective nominal path for each beamlet ,the pattern definition device including a deflection array device positioned across said aperture array field and comprisinga plurality of blanking openings allowing passage of beamlets through the deflection array device, anda plurality of deflection devices, each of said deflection devices being associated with a respective blanking opening and comprising at ...

METHOD FOR TRANSMITTING A BROADBAND ION BEAM AND ION IMPLANTER

A method for transmitting a broadband ion beam () and an ion implanter adopt an analyzing magnetic field (), a calibration magnetic field () and an analyzing grating () to transmit a broadband ion beam. If the analyzing magnetic field () enables the broadband ion beam () emitted into the analyzing magnetic field from an incident face () thereof to be deflected anticlockwise in a horizontal direction, the calibration magnetic field () enables an ion beam diffusing again after passing through the analyzing grating () to be deflected clockwise in the horizontal direction; if the analyzing magnetic field () enables the broadband ion beam () emitted into the analyzing magnetic field from the incident face () thereof to be deflected clockwise in the horizontal direction, the calibration magnetic field () enables an ion beam diffusing again after passing through the analyzing grating () to be deflected anticlockwise in the horizontal direction. The analyzing magnetic field () and the calibration magnetic field () enable the ion beam to be deflected along different directions in the horizontal direction, so that distribution of the required ions in the broadband ion beam () when emitted out of the calibration magnetic field () from an emergence face () thereof is the same as the distribution when being emitted into the analyzing magnetic field. 1. A method for transmitting a broadband ion beam , including the following steps: the analyzing magnetic field analyzes the mass of the broadband ion beam emitted into the analyzing magnetic field from an incident face thereof , so as to enable the required ions in the broadband ion beam to form a focal spot at a certain distance away from the emergence face thereof after being emitted out of the analyzing magnetic field from the emergence face thereof; an analyzing grating disposed at the focal spot selectively enables the required ions to pass therethrough; and a calibration magnetic field calibrates the angle of the ion beam ...

THREE-DIMENSIONAL RECONSTRUCTION OF A SEMICONDUCTOR SPECIMEN

There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles. 1. A system of examination of a semiconductor specimen , the system comprising a processor and memory circuitry (PMC) configured to:{'claim-text': ['a first image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first illumination angle, wherein the first image is associated with a first grey level intensity profile, and', 'a second image of the area acquired by the electron beam examination tool at a second illumination angle, different from the first illumination angle,'], '#text': 'obtain:'}wherein the second image is associated with a second grey level intensity profile; anduse the first grey level intensity profile and the second grey level intensity profile to solve an optimization problem enabling determining a plurality of height values informative of a height profile of the semiconductor specimen in the area,{'claim-text': [{'claim-text': ['(1) the second grey level intensity, or data informative thereof, matches the first grey level intensity, or data informative ...

Method of performing spectroscopy in a Transmission Charged-Particle Microscope

A method of performing spectroscopy in a Transmission Charged-Particle Microscope comprising: 2. A method according to claim 1 , wherein:said spectroscopic apparatus is an electron energy loss spectroscopy (EELS) device;said first portion comprises an EELS Core Loss Peak;said selected region comprises a feature selected from the group comprising an EELS Zero Loss Peak and an EELS Plasmon Resonance Peak.3. A method according to claim 1 , wherein said radiation sensor is movable in at least a direction parallel to a dispersion direction of said dispersing device.4. A method according to claim 1 , wherein said adjustable aperture device comprises a first plate having a first edge and a second plate having a second edge claim 1 , said edges opposing each other across an intervening gap claim 1 , at least said first plate being connected to an actuator that can be used to move it relative to said second plate so as to adjust said gap.5. A method according to claim 4 , wherein said sensor is attached to a side of said first plate distal from said detector and proximal to said first edge.6. A method according to claim 1 , wherein said sensor is arranged to extend in a transverse direction substantially perpendicular to a dispersion direction of said dispersing device.7. A method according to claim 1 , wherein said detection result adjustment comprises at least one of the following actions:deconvolving said detection result using said sensing result and said detection result as input to a mathematical deconvolution procedure;correcting for a contribution of an instrument-related transfer function in said detection result;determining an absolute energy scale for said detection result;determining an absolute intensity scale for said detection result.8. A method according to claim 1 , wherein said sensing result is used as input to a feedback loop to adjust an output of a power supply connected to at least one of said source claim 1 , illuminator claim 1 , imaging system and ...

ARC-PLASMA FILM FORMATION DEVICE

An arc-plasma film formation device includes a film formation chamber in which a substrate to be treated is stored, a plasma chamber in which at least a part of a target is stored, the plasma chamber being configured to be connected to the film formation chamber, and a plurality of hollow coils configured to generate a continuous line of magnetic force between the target and the film formation chamber and having at least one curved section, the plurality of hollow coils being arrange in the plasma chamber and covered by an outer coat made of a non-magnetic metal. Plasma containing ions derived from the target material and generated in the plasma chamber as a result of arc discharge is transported from the target to the substrate by passing an inside of the plurality of hollow coils. 1. An arc-plasma film formation device comprising:a film formation chamber in which a substrate to be treated is stored;a plasma chamber in which at least a part of a target is stored, the plasma chamber being configured to be connected to the film formation chamber; anda plurality of hollow coils configured to generate a continuous line of magnetic force having at least one curved section between the target and the film formation chamber, the plurality of hollow coils being arranged in the plasma chamber and covered by an outer coat made of a non-magnetic metal,wherein plasma containing ions derived from the target material and generated inside the plasma chamber as a result of arc discharge is transported from the target to the substrate by passing through an inside of the plurality of hollow coils.2. The arc-plasma film formation device as recited in claim 1 ,wherein a coil section to which a current is supplied, a water-cooled tube through which cooling water flows, and a water-cooled plate to be cooled by the water-cooled tube are arrange inside the hollow coils, andwherein an inside of the hollow coils is filled with a resin having a thermal conductivity.3. The arc-plasma film ...

ABERRATION MEASUREMENT METHOD AND ELECTRON MICROSCOPE

An aberration measurement method for an objective lens in an electron microscope including an objective lens which focuses an electron beam that illuminates a specimen, and a detector which detects an electron beam having passed through the specimen, includes: introducing a coma aberration to the objective lens; measuring an aberration of the objective lens before introducing the coma aberration to the objective lens; measuring an aberration of the objective lens after introducing the coma aberration to the objective lens; and obtaining a position of an optical axis of the objective lens on a detector plane of the detector based on measurement results of the aberration of the objective lens before and after introducing the coma aberration. 1. An aberration measurement method for an objective lens in an electron microscope comprising an objective lens which focuses an electron beam that illuminates a specimen , and a detector which detects an electron beam having passed through the specimen , the aberration measurement method comprising:introducing a coma aberration to the objective lens;measuring an aberration of the objective lens before introducing the coma aberration to the objective lens;measuring an aberration of the objective lens after introducing the coma aberration to the objective lens; andobtaining a position of an optical axis of the objective lens on a detector plane of the detector based on measurement results of the aberration of the objective lens before and after introducing the coma aberration.2. The aberration measurement method according to claim 1 ,wherein, in obtaining the position of the optical axis of the objective lens, the position of the optical axis of the objective lens on the detector plane is obtained based on a change in an apparent aberration before and after introducing the coma aberration.3. The aberration measurement method according to claim 2 ,wherein, in obtaining the position of the optical axis of the objective lens, a ...

CHARGED PARTICLE BEAM APPARATUS

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis. 1. A charged particle beam apparatus comprising:a charged particle source for generating a charged particle beam;a specimen mounting table for mounting a specimen;a condenser lens and an object lens for converging the charged particle beam and irradiating the converged charged particle beam to the specimen;a plurality of image shift deflectors for deflecting the charged particle beam;a control unit; anda storage unit,wherein the storage unit stores first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes the object lens center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam from the first optical axis to a second optical axis that enters the specimen with a predefined incident angle different from the incident angle of the first optical axis, andthe control unit controls the deflection of the charged particle beam ...

ION SOURCE DEVICE

The invention provides an electron-impact ion source device having high brightness as compared to known Nier-type ion sources, while providing similar advantages in terms of flexibility of the generated ion species, for example. The ionization chamber of the device operates at high pressures and provides for a large number of interactions between the electron beam and the gas molecules. 1. An ion source device comprising means for forming and guiding an electron beam along a first axis and an ionization chamber having an inlet for a gas and an inlet for said electron beam , wherein the ionization chamber comprises an ion beam outlet located on a second axis that is generally parallel to said first axis , surrounded by an ion carpet comprising co-planar and substantially concentric electrodes for funneling ions formed by interaction of said electron beam with said gas towards said ion beam outlet to form an ion beam , and an electronic circuit configured for applying an electric potential to said electrodes.2. The ion source device according to claim 1 , wherein said electronic circuit is configured for applying a radio-frequency electric potential to said electrodes.3. The ion source device according to claim 1 , wherein said electronic circuit is configured for applying DC electric potentials to said electrodes.4. The ion source device according to claim 1 , wherein the electrodes of said ion carpet are supported on a substantially planar substrate having an aperture aligned with said ion beam outlet.5. The ion source device according to claim 4 , wherein said electrodes are supported on a first side of said substrate claim 4 , and wherein said electronic circuit is supported on the second side of said substrate.6. The ion source device according to claim 4 , wherein said substrate is an integral part of an internal wall of said ionization chamber.7. The ion source device according to claim 1 , wherein said co-planar and concentric electrodes are arranged to have ...

SCANNING MAGNET DESIGN WITH ENHANCED EFFICIENCY

A scanning magnet is positioned downstream of a mass resolving magnet of an ion implantation system and is configured to control a path of an ion beam downstream of the mass resolving magnet for a scanning or dithering of the ion beam. The scanning magnet has a yoke having a channel defined therein. The yoke is ferrous and has a first side and a second side defining a respective entrance and exit of the ion beam. The yoke has a plurality of laminations stacked from the first side to the second side, wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations having plurality of slots defined therein. 1. A scanning magnet for magnetically scanning an ion beam , the scanning magnet comprising:a yoke having a channel defined therein, the yoke having a first side and a second side defining a respective entrance and exit of the ion beam passing through the channel, the yoke comprising a plurality of laminations stacked from the first side to the second side, and wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations, wherein the one or more slotted laminations have a plurality of tines extending toward the channel, wherein a plurality of slots are defined between the plurality of tines; anda scanner coil comprising a first wire wrapped around the yoke.2. The scanning magnet of claim 1 , wherein the plurality of tines generally define a slot spacing and a slot depth associated with the plurality of slots claim 1 , wherein the slot spacing and slot depth are configured to guide flux from the yoke via the plurality of tines toward a region through which the ion beam passes.3. The scanning magnet of claim 2 , wherein the plurality of laminations are electrically isolated from one another by an insulation layer disposed therebetween claim 2 , and wherein the slot spacing is greater than or ...

TILTING PARAMETERS CALCULATING DEVICE, SAMPLE STAGE, CHARGED PARTICLE BEAM DEVICE, AND PROGRAM

There is provided a tilting parameters calculating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample mounted on a sample stage, the tilting parameters calculating device being configured to calculate tilting parameters, the tilting parameters being input parameters to control a tilting direction and a tilting value of the sample and/or the charged particle beam, the input parameters being necessary to change an incident direction of the charged particle beam with respect to the sample, the tilting parameters calculating device including a tilting parameters calculating unit for calculating the tilting parameters based on information that indicates the incident direction of the charged particle beam with respect to a crystal lying at a selected position on the surface in a state where the incident direction of the charged particle beam with respect to the sample is in a predetermined incident direction, the information being designated on a crystal orientation figure, which is a diagram illustrating the incident direction of the charged particle beam with respect to a crystal coordinate system of the crystal. 1. A tilting parameters calculating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample mounted on a sample stage , the tilting parameters calculating device being configured to calculate tilting parameters , the tilting parameters being input parameters to control a tilting direction and a tilting value of the sample and/or the charged particle beam , the input parameters being necessary to change an incident direction of the charged particle beam with respect to the sample , the tilting parameters calculating device comprisinga tilting parameters calculating unit for calculating the tilting parameters based on information that indicates the incident direction of the charged particle beam with respect to a crystal lying at a ...

SYSTEM AND PROCESS FOR MEASURING STRAIN IN MATERIALS AT HIGH SPATIAL RESOLUTION

A process for measuring strain is provided that includes placing a sample of a material into a TEM as a sample. The TEM is energized to create a small electron beam with an incident angle to the sample. Electrical signals are generated that control multiple beam deflection coils and image deflection coils of the TEM. The beam deflection control signals cause the angle of the incident beam to change in a cyclic time-dependent manner. A first diffraction pattern from the sample material that shows dynamical diffraction effects is observed and then one or more of the beam deflection coil control signals are adjusted to reduce the dynamical diffraction effects. One or more of the image deflection coil control signals are then adjusted to remove any motion of the diffraction pattern. A diffraction pattern is then collected from a strained area of the material after the adjusting step, and the strain is then determined from a numerical analysis of the strained diffraction pattern compared to a reference diffraction pattern from an unstained area of the material. 1. A process for measuring strain in crystalline materials comprising:placing a sample of a material into a transmission electron microscope as a specimen; andenergizing the transmission electron microscope to create an electron beam with an incident angle to the material; andgenerating electrical beam deflection coil control signals that control a plurality of beam deflection coils of the transmission electron microscope; andgenerating electrical image deflection coil control signals that control a plurality of image deflection coils of the transmission electron microscope;viewing a first diffraction pattern from the material with dynamical diffraction effects;adjusting at least one of the beam deflection coil control signals to reduce the dynamical diffraction effects;adjusting at least one of the image deflection coil control signals to stop the motion of the diffraction pattern induced by the beam deflection ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible. 1. (canceled)2. A source-conversion unit of an electron source that emits an electron beam ,the source-conversion unit comprising:a micro-deflector array that facilitates creation of a plurality of images of the electron source, each of the images being associated with a corresponding beamlet of a plurality of beamlets that are derived from the electron beam; and a micro-compensator array that facilitates adding aberration to each of the beamlets.3. The source-conversion unit of claim 2 , further comprising:a beamlet limiting component that includes a plurality of beamlet limiting apertures, each of the apertures to limit a corresponding beamlet of the plurality of beamlets.4. The source-conversion unit of claim 2 ,wherein the micro-deflector array includes a plurality of micro-deflectors,wherein the micro-compensator array includes a plurality of micro-compensators, andwherein each of the micro-deflectors facilitates creation of a corresponding image of the plurality of images.5. The source-conversion unit of claim 4 ,wherein each of the micro-compensators facilitates adding an aberration to a corresponding beamlet of the plurality of beamlets.6. The source-conversion unit of claim 4 ,wherein the plurality of micro-compensators facilitates adding a plurality of aberrations to the plurality of beamlets, each of the micro-compensators facilitates adding a corresponding aberration of the ...

Method of Detecting Electrons, an Electron-Detector and an Inspection System

An electron-detector comprises a scintillator plate electron optics for directing a plurality of electron beams onto the scintillator plate so that the electron beams are incident onto the scintillator plate at locations of incidence disposed at a distance from each other, a light detector comprising a plurality of light receiving areas disposed at a distance from each other, and light optics for generating a first light-optical image of at least a portion of the scintillator plate at a region where the light receiving areas of the light detector are disposed so that, by the imaging, each of the locations of incidence is associated with a light receiving area; and wherein the electron optics comprise an electron beam deflector for displacing the locations of incidence of the electron beams on the scintillator plate in a direction orthogonal to a normal of a surface of the scintillator plate. 1. A method of detecting a plurality of electron beams , the method comprising:directing a plurality of electron beams onto a scintillator plate using electron optics so that the electron beams are incident onto the scintillator plate at a plurality of locations of incidence disposed at a distance from each other;imaging the locations of incidence onto a plurality of light receiving areas of a light detector using light optics so that, by the imaging, each of the locations of incidence is associated with one of the light receiving areas;detecting light incident onto the light receiving areas of the light detector; anddisplacing the locations of incidence, where the electron beams are incident onto the scintillator plate, in a direction orthogonal to a normal of a surface of the scintillator plate.2. The method according to claim 1 , wherein the displacing of the locations of incidence claim 1 , where the electron beams are incident onto the scintillator plate claim 1 , comprises moving the scintillator plate relative to components of the electron optics.3. The method according ...

Method of Acquiring Dark-Field Image

A method of acquiring a dark-field image for a scanning transmission electron microscope is provided. The scanning transmission electron microscope includes a dark-field detector having an annular detection region which is capable of detecting electrons scattered at a specimen in a predetermined angular range, an objective lens, and an imaging lens group disposed at a stage following the objective lens. The method includes reducing an influence of a geometrical aberration on the electrons scattered in the predetermined angular range by shifting a focus of the imaging lens group from a diffraction plane of the objective lens. 1. A method of acquiring a dark-field image for a scanning transmission electron microscope ,the scanning transmission electron microscope comprising:a dark-field detector having an annular detection region configured to detect electrons scattered at a specimen in a predetermined angular range;an objective lens; andan imaging lens group disposed at a stage following the objective lens,the method comprising:reducing an influence of a geometrical aberration on the electrons scattered in the predetermined angular range by shifting a focus of the imaging lens group from a diffraction plane of the objective lens.2. The method of acquiring a dark-field image according to claim 1 , whereinthe scanning transmission electron microscope further comprises an imaging system deflector that deflects an electron beam transmitted through the specimen, andthe method further comprises correcting, with use of the imaging system deflector, a deviation of the electron beam from an optical axis generated by shifting the focus of the imaging lens group from the diffraction plane of the objective lens.3. The method of acquiring a dark-field image according to claim 1 , wherein the imaging lens group comprises an intermediate lens and a projector lens that are disposed at a stage following the objective lens.4. The method of acquiring a dark-field image according to ...

METHOD OF MEASURING BEAM POSITION OF MULTI CHARGED PARTICLE BEAM, AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS

A method of measuring beam positions of multi charged particle beams includes acquiring the number of beams of multi charged particle beams, needed for the measurement reproducibility of a current amount to be within the range of an allowable value, setting a plurality of measurement points depending on a desired dimensional accuracy value, in an irradiation region irradiated by the whole of the multi charged particle beams, setting, for each of a plurality of measurement points, a beam region, including a measurement point of a plurality of measurement points, irradiated by a plurality of beams whose number is the number of beams needed for the measurement reproducibility in the multi charged particle beams, and measuring, for each of a plurality of measurement points, the position of a measurement point concerned in a plurality of measurement points by using a plurality of beams of a corresponding beam region. 1. A method of measuring beam positions of multi charged particle beams comprising:acquiring a number of beams of multi charged particle beams, needed for a measurement reproducibility of a current amount to be within a range of an allowable value;setting a plurality of measurement points depending on a desired dimensional accuracy value, in an irradiation region irradiated with a whole of the multi charged particle beams;setting, for each of the plurality of measurement points, a beam region, including a measurement point of the plurality of measurement points, irradiated by a plurality of beams whose number is the number of beams needed for the measurement reproducibility in the multi charged particle beams; andmeasuring, for the each of the plurality of measurement points, a position of a measurement point concerned in the plurality of measurement points by using the plurality of beams of a corresponding beam region.2. The method according to claim 1 , further comprising:calculating a value, as a division number, by dividing a maximum distortion amount of ...

Electron detection system

An electron detection system for detecting secondary electrons emitted from a sample irradiated by a Focused Ion Beam (FIB). The FIB emanates from a FIB column and travels along a beam axis within a beam region, which extends from the FIB column to the sample. The system comprises an electron detector configured for detecting the secondary electrons, and a deflecting field configured to deflect a trajectory of the secondary electrons, which were propagating towards the FIB column, to propel away from the beam axis and towards the electron detector. The deflecting field may be configured to divert the trajectory of secondary electrons while the secondary electrons are generally within the beam region.

OZONE SUPPLYING APPARATUS, OZONE SUPPLYING METHOD, AND CHARGED PARTICLE BEAM DRAWING SYSTEM

An ozone supplying apparatus according to an embodiment of the present invention is an ozone gas supplying apparatus which supplies an ozone gas to a vacuum apparatus. The ozone supplying apparatus includes an ozone generator configured to generate the ozone gas, a first flow controller configured to control a flow rate of the ozone gas generated by the ozone generator, a second flow controller configured to control a flow rate of the ozone gas supplied to the vacuum apparatus, and a main pipe provided on a secondary side of the first flow controller and on a primary side of the second flow controller, with the ozone gas being introduced into the main pipe at such a flow rate that an internal pressure of the main pipe is controlled to be lower than atmospheric pressure by the first flow controller. 1. An ozone supplying apparatus which supplies ozone gas to a vacuum apparatus , comprising:an ozone generator configured to generate the ozone gas;a first flow controller configured to control a flow rate of the ozone gas generated by the ozone generator;a second flow controller configured to control a flow rate of the ozone gas supplied to the vacuum apparatus; anda main pipe provided on a secondary side of the first flow controller and on a primary side of the second flow controller, with the ozone gas being introduced into the main pipe at such a flow rate that an internal pressure of the main pipe is controlled to be lower than atmospheric pressure by the first flow controller.2. The ozone supplying apparatus according to claim 1 , further comprising:a first exhaust provided at a first sub-pipe which is connected to the main pipe at a connection point, the first exhaust configured to exhaust part of the ozone gas that is introduced into the main pipe, at a predetermined flow rate.3. The ozone supplying apparatus according to claim 2 , whereinthe connection point is provided at a point where a ratio between a first capacity and a second capacity is 800 to 8,000:1, the ...

Method and System for Focus Adjustment of a Multi-Beam Scanning Electron Microscopy System

A scanning electron microscopy system is disclosed. The system includes a multi-beam scanning electron microscopy (SEM) sub-system. The SEM sub-system includes a multi-beam electron source configured to form a plurality of electron beams, a sample stage configured to secure a sample, an electron-optical assembly to direct the electron beams onto a portion of the sample, and a detector assembly configured to simultaneously acquire multiple images of the surface of the sample. The system includes a controller configured to receive the images from the detector assembly, identify a best focus image of images by analyzing one or more image quality parameters of the images, and direct the multi-lens array to adjust a focus of one or more electron beams based on a focus of an electron beam corresponding with the identified best focus image. 1. A multi-beam scanning electron microscopy apparatus comprising: a multi-beam electron source configured to form a plurality of electron beams;', 'a sample stage configured to secure a sample;', 'an electron-optical assembly including a set of electron-optical elements configured to direct at least a portion of the plurality of electron beams onto a portion of the sample; and', 'a detector assembly configured to simultaneously acquire a plurality of images of the surface of the sample, each image associated with an electron beam of the plurality of electron beams;, 'a multi-beam scanning electron microscopy sub-system comprising receive the plurality of images from the detector assembly;', 'identify at least one of a best focus image or a best astigmatism image of the plurality of images by analyzing one or more image quality parameters of at least some of the images of the plurality of the images; and', 'direct the multi-beam source to adjust at least one of focus or astigmatism of one or more electron beams based on at least one of focus or astigmatism of an electron beam corresponding with at least one of the identified best focus ...

PARTICLE BEAM SYSTEM FOR AZIMUTHAL DEFLECTION OF INDIVIDUAL PARTICLE BEAMS AND METHOD FOR AZIMUTH CORRECTION IN A PARTICLE BEAM SYSTEM

A particle beam system includes a multi-beam particle source for generating a multiplicity of charged individual particle beams, and a magnetic multi-deflector array for deflecting the individual particle beams in the azimuthal direction. The magnetic multi-deflector array includes a magnetically conductive multi-aperture plate having a multiplicity of openings, which is arranged in the beam path of the particle beams such that the individual particle beams substantially pass through the openings of the multi-aperture plate. The magnetic multi-deflector array also includes a magnetically conductive aperture plate having an individual opening. The aperture plate is arranged in the beam path of the particle beams such that the individual particle beams substantially pass through the first aperture plate. The multi-aperture plate and the first aperture plate are connected to each other such that a cavity is formed between the two plates. A first coil for generating a magnetic field is arranged in the cavity between the first aperture plate and the multi-aperture plate such that the multiplicity of individual particle beams substantially pass through the coil. 1. A particle beam system , comprising:a multi-beam particle source configured to generate a multiplicity of charged individual particle beams; and{'claim-text': ['a magnetically conductive multi-aperture plate comprising a multiplicity of openings, the multi-aperture plate being in a beam path of the individual particle beams so that different individual particle beams substantially pass through different openings in the multi-aperture plate;', 'a magnetically conductive first aperture plate comprising an individual opening, the first aperture plate being in the beam path of the individual particle beams so that a multiplicity of the individual particle beams substantially pass through the individual opening in the first aperture plate; and', 'a first coil configured to generate a magnetic field,'], '#text': 'a ...

In-lens wafer pe-charging and inspection with multiple beams

A charged particle system may include a first charged particle beam source provided on a first axis, and a second charged particle beam source provided on a second axis. There may also be provided a deflector arranged on the first axis. The deflector may be configured to deflect a beam generated from the second charged particle beam source toward a sample. A method of operating a charged particle beam system may include switching between a first state and a second state of operating a deflector. In the first state, a first charged particle beam generated from a first charged particle beam source may be blanked and a second charged particle beam generated from a second charged particle beam source may be directed toward a sample. In the second state, the second charged particle beam may be blanked and the first charged particle beam may be directed toward the sample.

MULTIPLE-CHARGED PARTICLE-BEAM IRRADIATION APPARATUS AND MULTIPLE-CHARGED PARTICLE-BEAM IRRADIATION METHOD

A multiple-charged particle-beam irradiation apparatus includes a shaping aperture array substrate that causes a charged particle beam to pass through a plurality of first apertures to form multi-beams, a plurality of blanking aperture array substrates each provided with a plurality of second apertures, which enable corresponding beams to pass, and including a blanker arranged at each of the second apertures, a movable table on which the blanking aperture array substrates are mounted so as to be spaced apart from each other in a second direction, which is orthogonal to a first direction along an optical axis, and that moves in the second direction to position one of the blanking aperture array substrates on the optical axis, and an alignment mechanism that performs an alignment adjustment between the blanking aperture array substrate on the optical axis and the shaping aperture array substrate. 1. A multiple-charged particle-beam irradiation apparatus comprising:an emitter configured to emit a charged particle beam;a shaping aperture array substrate on which a plurality of first apertures are provided and configured to partially enable the charged particle beam to pass through the first apertures to form multi-beams;a plurality of blanking aperture array substrates each provided with a plurality of second apertures, which enable corresponding beams of the multi-beams to pass, and comprising blankers respectively disposed in the second apertures to perform blanking deflection of the beams;a movable table on which the blanking aperture array substrates are mounted so as to be spaced apart from each other in a second direction, which is orthogonal to a first direction along an optical axis, and configured to move in the second direction to position one of the blanking aperture array substrates on the optical axis; andan alignment mechanism configured to perform an alignment adjustment between one of the blanking aperture array substrates positioned on the optical axis ...

Electrostatic filter with shaped electrodes

Provided herein are approaches for controlling an ion beam using an electrostatic filter with curved electrodes. In some embodiments, a system may include an electrostatic filter receiving an ion beam, the filter including first and second electrodes disposed opposite sides of an ion beam line, each of the first and second electrodes having a central region between first and second ends, wherein a distance between a first outer surface of the first electrode and a second outer surface of the second electrode varies along an electrode length axis extending between the first and second ends. The system may further include a power supply in communication with the electrostatic filter, the power supply operable to supply a voltage and a current to the first and second electrodes, wherein the variable distance between the first and second outer surfaces causes the ion beam to converge or diverge.

DRUG DELIVERY SYSTEM AND METHOD OF MANUFACTURING THEREOF

An apparatus and method provided a drug layer formed on a surface region of a medical device, the drug layer comprised of a drug deposition and a carbonized or densified layer formed from the drug deposition by irradiation on an outer surface of the drug deposition, wherein the carbonized or densified layer does not penetrate through the drug deposition and is adapted to release drug from the drug deposition at a predetermined rate. 1. A drug delivery system , comprising:a medical device having at least one surface region; anda drug layer formed on the at least one surface region, the drug layer comprised of a drug deposition on the at least one surface region and a carbonized or densified layer formed from the drug deposition by irradiation on an outer surface of the drug deposition, wherein the carbonized or densified layer does not penetrate through the drug deposition and is adapted to release drug from the drug deposition at a predetermined rate.2. The drug delivery system of claim 1 , wherein the drug deposition does not include any polymers.3. The drug delivery system of claim 1 , wherein the drug deposition is encapsulated between the carbonized or densified layer and the at least one surface region.4. The drug delivery system of claim 1 , further comprising at least one additional drug layer formed on the first said drug layer claim 1 , the additional drug layer comprised of an additional drug deposition and an additional carbonized or densified layer formed from the additional drug deposition by irradiation on an outer surface of the additional drug deposition.5. The drug delivery system of claim 1 , wherein the at least one surface region is a previously applied drug layer.6. The drug delivery system of claim 1 , wherein the irradiation is gas-cluster ion beam irradiation.7. The drug delivery system of claim 1 , wherein the irradiation is Neutral Beam irradiation derived from a gas-cluster ion beam.8. The drug delivery system of claim 1 , wherein the ...

Measurement Method and Electron Microscope

Provided is a measurement method for measuring, in an electron microscope including a segmented detector having a detection plane segmented into a plurality of detection regions, a direction of each of the plurality of detection regions in a scanning transmission electron microscope (STEM) image, the measurement method including: shifting an electron beam EB incident on a sample S under a state where the detection plane is conjugate to a plane shifted from a diffraction plane to shift the electron beam EB on the detection plane, and measuring a shift direction of the electron beam EB on the detection plane with the segmented detector; and obtaining the direction of each of the plurality of detection regions in the STEM image from the shift direction. 1. A measurement method for measuring , in an electron microscope including a segmented detector having a detection plane segmented into a plurality of detection regions , a direction of each of the plurality of detection regions in a scanning transmission electron microscope (STEM) image ,the measurement method comprising:shifting an electron beam incident on a sample under a state where the detection plane is conjugate to a plane shifted from a diffraction plane to shift the electron beam on the detection plane, and measuring a shift direction of the electron beam on the detection plane with the segmented detector; andobtaining the direction of each of the plurality of detection regions in the STEM image from the shift direction.2. The measurement method according to claim 1 ,wherein measuring the shift direction with the segmented detector includes repeatedly shifting the electron beam incident on the sample and changing a direction in which the electron beam is shifted every time the electron beam is shifted.3. The measurement method according to claim 1 ,wherein measuring the shift direction with the segmented detector includes repeatedly shifting the electron beam incident on the sample and changing a position of ...

CHARGED-PARTICLE-BEAM DEVICE

A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter () is arranged between a detector and a lens () arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device () is provided for the interlocked control of the Wien filter () and a lens () arranged on the charged-particle-source side among the two stages of lenses. 1. A charged particle beam apparatus comprising:a charged particle source;2-stage lenses for converging a primary charged particle beam emitted from the charged particle source on a sample, wherein a first lens arranged on a side of the charged particle source and a second lens arranged on the side of the sample are included;a deflector that specifies an irradiation position of the primary charged particle beam on the sample;a detector arranged between the 2-stage lenses to detect a secondary charged particle signal generated by the sample being irradiated with the primary charged particle beam from the sample;a first Wien filter arranged between the detector and the second lens to deflect the secondary charged particle signal; anda processor that controls the first Wien filter and the first lens in linkage.2. The charged particle beam apparatus according to claim 1 , wherein the processor calculates an action of the first lens from a deflection amount of the secondary charged particle signal by the first Wien filter.3. The charged particle beam apparatus according to claim 2 , wherein the processor calculates the action of the first lens by accepting a focused position of the first lens ...

DEVICE FOR MEASURING AND CLOSED-LOOP CONTROL OF A MAGNETIC FIELD GENERATED BY AN ELECTROMAGNET

A device for the measuring and closed-loop control of a magnetic field generated by means of an electromagnet (), comprising a first measuring device () for purposes of measuring the absolute magnetic field strength of the magnetic field, a second measuring device () for purposes of measuring the alteration of the magnetic field strength of the magnetic field, at least two integrators () for purposes of determining the magnetic field strength of the alteration of the magnetic field strength measured in the second measuring device (), which integrators are arranged in parallel to one another, calibration means, a unit for purposes of comparing the magnetic field strength measured by the first measuring device () and the second measuring device (), and a further unit for purposes of comparing the measured magnetic field strength with a prescribed design field strength, and a method. 1. A device for the measuring and closed-loop control of a magnetic field generated by means of an electromagnet comprising a first measuring device for purposes of measuring the absolute magnetic field strength of the magnetic field , a second measuring device for purposes of measuring the alteration of the magnetic field strength of the magnetic field , at least two integrators for purposes of determining the magnetic field strength of the alteration of the magnetic field strength measured in the second measuring device , whose integrators are arranged in parallel to one another , calibration means , a unit for purposes of comparing the magnetic field strength measured by the first measuring device and the second measuring device , and a further unit for purposes of comparing the measured magnetic field strength with a prescribed design field strength.2. The device in accordance with claim 1 , wherein the first measuring device is designed as a Hall probe.3. The device in accordance with claim 1 , wherein the second measuring device is designed as a pickup coil.4. The device in ...

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. 137-. (canceled)38. A charged-particle beam apparatus , comprising:a source conversion unit configured to convert electrons from a single electron source into a plurality of beamlets, the source conversion unit comprising a plurality of paired elements, wherein each paired element comprises a first element and a second element above the first element;a first projection system configured to form a plurality of probe spots on a sample from the plurality of beamlets;a second projection system configured to focus a plurality of secondary beams generated by the plurality of probe spots on the sample; anda detection device configured to receive the plurality of secondary beams.39. The charged-particle beam apparatus of claim 38 , wherein the first elements of the plurality of paired elements form a first layer of multi-pole elements and the second elements of the plurality of paired elements form a second layer of multi-pole elements.40. The charged-particle beam apparatus of claim 39 , wherein the multi-pole elements of the first layer are aligned with the multi-pole elements of the second layer in a direction parallel to a primary optical axis of the apparatus.41. The charged-particle beam apparatus of claim 38 , wherein the first element and the second element of the plurality of paired elements are ...

A CORRECTOR STRUCTURE AND A METHOD FOR CORRECTING ABERRATION OF AN ANNULAR FOCUSED CHARGED-PARTICLE BEAM

A corrector structure and a method for correcting aberration of an annular focused charged-particle beam, the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam. 1. A corrector structure for correcting aberration of an annular focused charged-particle beam , the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam.2. The corrector structure of claim 1 , wherein the lenses comprise core-lenses.3. The corrector structure of claim 1 , wherein the lenses comprise at least one converging lens and at least one diverging lens.4. The corrector structure of claim 1 , wherein for a charged-particle beam converging from a source in a direction towards an objective lens claim 1 , the corrector structure comprises two or more lenses.5. The corrector structure of claim 1 , wherein for a charged-particle beam diverging from a source in a direction towards an objective lens claim 1 , the corrector structure comprises three or more lenses.6. The corrector structure of wherein the lenses comprise two converging lenses and one diverging lens.7. The corrector structure of claim 6 , wherein the diverging lens is disposed between the two converging lenses along a path for the charged-particle beam.8. The corrector structure of claim 1 , wherein the corrector structure is configured for disposal between an objective lens and an annular aperture along a path for the charged-particle beam.9. The corrector structure of claim 1 , wherein the lenses comprise electric field claim 1 , magnetic field and/or combined electric/magnetic field lenses.10. A method for correcting aberration of an annular focused charged-particle beam claim 1 , the method comprising:providing a plurality of lenses; andconfiguring the lenses for reducing second-order geometric aberration in the charged-particle beam.11. The method of claim 10 , ...

Aligning a featureless thin film in a tem

When preparing a Hole-Free Phase Plates (HFPP) a preferably featureless thin film should be placed with high accuracy in the diffraction plane of the TEM, or a plane conjugate to it. Two methods for accurately placing the thin film in said plane are described. One method uses a Ronchigram of the thin film while the TEM is in imaging mode, and the magnification of the Ronchigram is tuned so that the magnification in the middle of the Ronchigram is infinite. The second method uses electrons scattered by the thin film while the TEM is in diffraction mode. When the thin film does not coincide with the diffraction plane, electrons scattered by the thin film seem to originate from another location than the cross-over of the zero beam. This is observed as a halo. The absence of the halo is proof that the thin film coincides with the diffraction plane.

ELECTRON GUN, CHARGED PARTICLE GUN, AND CHARGED PARTICLE BEAM APPARATUS USING ELECTRON GUN AND CHARGED PARTICLE GUN

The purpose of the present invention is to provide a charged particle gun using merely an electrostatic lens, said charged particle gun being relatively small and having less aberration, and to provide a field emission-type charged particle gun having high luminance even with a high current. This charged particle gun has: a charged particle source; an acceleration electrode that accelerates charged particles emitted from the charged particle source; a control electrode, which is disposed further toward the charged particle source side than the acceleration electrode, and which has a larger aperture diameter than the aperture diameter of the acceleration electrode; and a control unit that controls, on the basis of a potential applied to the acceleration electrode, a potential to be applied to the control electrode. 1. An electron gun comprising:a needle-like electron source acting as a field emission type electron source; an acceleration electrode to accelerate an electron emitted from the electron source;a control electrode disposed nearer to a side of the electron source than to a side of the acceleration electrode and having an aperture diameter larger than an aperture diameter of the acceleration electrode; anda control section to control a potential applied to the control electrode based on a potential applied to the acceleration electrode.2. The electron gun according to claim 1 , wherein provided that the aperture diameter of the control electrode is defined as D and a distance between the electron source and the acceleration electrode is defined as L claim 1 , a fraction of D to L is expressed with D/L<1.3. The electron gun according to claim 2 , wherein the distance between the electron source and the acceleration electrode is defined as 6 mm Подробнее

PLASMA PROCESSING APPARATUS

A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member. 1. A plasma processing apparatus for exciting a processing gas by a microwave , comprising:a processing chamber;a mounting table provided in the processing chamber, the mounting table including a lower electrode and an electrostatic chuck provided on the lower electrode;a focus ring made of a dielectric material, extending in an annular shape so as to surround the electrostatic chuck;a first tubular member made of a dielectric material, the first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring;an annular member made of a dielectric material, provided between the focus ring and the first tubular member;a conductive second tubular member extending along an outer periphery of the first tubular member; anda choke portion made of a dielectric material, serving to suppress a microwave propagating through the first tubular member via the focus ring and the annular member,wherein the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an ...

Charged Particle Beam Device

There is proposed a charged particle beam device that generates a first signal waveform on the basis of scanning, the number of scanning lines of which is one or more, the scanning intersecting an edge of a pattern on a sample, generates a second signal waveform for a first area that is wider than the one scanning line on the basis of scanning, the number of scanning lines of which is larger than that of scanning for generating the first signal waveform, then determines a deviation between the generated first and second signal waveforms, and thereby determines, from the deviation, correction data used at the time of dimensional measurement. 1. A charged particle beam device comprising: a scanning deflector that scans a charged particle beam emitted from a charged particle source; a detector that detects a charged particle obtained on the basis of scanning of the charged particle beam applied to a sample; a computing device that generates a signal waveform on the basis of an output of the detector , and computes pattern dimensions of a pattern formed on the sample by using the signal waveform; and a control device that controls the scanning deflector ,wherein when the control device controls the scanning deflector to perform scanning, the number of scanning lines of which being one or more, for a first region intersecting an edge of the pattern on the sample, the computing device generates a first signal waveform on the basis of the charged particle detected by the detector,when the control device controls the scanning deflector to perform scanning, the number of scanning lines of which being larger than that at the time of scanning the first region, for a first area that includes the first region, and that is wider than the first region, the computing device generates a second signal waveform on the basis of the charged particle detected by the detector, andthe control device determines a deviation between the generated first and second signal waveforms.2. The ...

Beam Deflection Device, Aberration Corrector, Monochromator, and Charged Particle Beam Device

The present disclosure pertains to a beam deflection device capable of properly deflecting a beam. The present disclosure provides a beam deflection device for deflecting a beam inside a charged particle beam device, said beam deflection device being provided with: one or more electrostatic deflectors (207, 208) each having a pair of electrodes disposed so as to face each other across a beam path in a first direction orthogonal to the beam path; and one or more magnetic deflectors (209) each having a pair of magnetic poles disposed so as to face each other across the beam path in a second direction orthogonal to the beam path and to the first direction. When viewed from an incident direction of the beam, the one or more electrostatic deflectors and the one or more magnetic deflectors are stacked along the beam path such that the pair of electrodes at least partially overlap with the pair of magnetic poles and with a gap between the pair of magnetic poles.

Charged Particle Beam Apparatus, Alignment Method of Charged Particle Beam Apparatus, Alignment Program, and Storage Medium

The present invention shortens the time spent in a search for a visual field by a user in a charged particle beam apparatus in which an observation range on a sample is set by using a captured image of the sample. When the contour of a sample table is circularly configured, for example, the central position of a sample table image on an optical image is quickly, easily, and accurately obtained by calculating, from the coordinates of the respective vertices of a triangle circumscribed about the contour created on the optical image by the user, the incenter of the triangle without direct recognition by automatic image analysis, which is complex and time-consuming, of the contour of the sample table image on the optical image. 1. A charged particle beam apparatus comprising:a charged particle source that emits a charged particle beam;a charged particle optical system that irradiates a sample with the charged particle beam from the charged particle source;a sample chamber in which a sample table on which the sample is placed is accommodated;a stage that holds the sample table within the sample chamber and moves the sample together with the sample table within the sample chamber to change an irradiation position and/or an irradiation direction of the charged particle beam from the charged particle optical system with respect to the sample;a detector that detects signal particles generated from the sample placed on the sample table by irradiation with the charged particle beam;an image processing portion that generates an observation image of an observation range on the sample irradiated with the charged particle beam based on the signal particles detected by the detector;an image display portion that displays a captured image including a sample table image of the acquired sample table by an imaging device;an operation input portion that sets and inputs measurement reference point by designating points positioned apart from each other on a contour of the sample table ...

SUPPORT UNIT, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND METHOD FOR TREATING A SUBSTRATE

The inventive concepts provide a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a treatment space is provided, a support unit supporting a substrate in the process chamber, a gas supply unit supplying a gas into the process chamber, and a plasma source generating plasma from the gas. The support unit includes a support plate on which a substrate is loaded, a focus ring disposed to surround the support plate, an electric field adjusting ring disposed under the focus ring, and an actuator vertically moving the electric field adjusting ring. 1. A substrate treating apparatus comprising:a process chamber in which a treatment space is provided;a support unit supporting a substrate in the process chamber;a gas supply unit supplying a gas into the process chamber; anda plasma source generating plasma from the gas, wherein the support unit comprises:a support plate on which a substrate is loaded;a focus ring disposed to surround the support plate;an electric field adjusting ring disposed under the focus ring; andan actuator vertically moving the electric field adjusting ring.2. The substrate treating apparatus of claim 1 , wherein the support unit further comprises:a body ring disposed under the focus ring, the body ring coupled to the focus ring to provide an inner space,wherein the electric field adjusting ring is vertically moved in the inner space.3. The substrate treating apparatus of claim 2 , wherein the actuator vertically moves the electric field adjusting ring by magnetic force.4. The substrate treating apparatus of claim 3 , wherein the actuator comprises:a first magnetic force member fixed to the electric field adjusting ring; anda second magnetic force member facing the first magnetic force member and provided in the inner space.5. The substrate treating apparatus of claim 4 , wherein the first magnetic force member is fixed on a bottom surface of the electric field adjusting ring claim 4 , andwherein the ...