Verfahren zur Probenherstellung

Röntgenstrahlenspektrometer

Charged particle beam device, image generation method, observation system

HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPE

The present invention relates to a high-resolution scanning electron microscope. The high-resolution scanning electron microscope can prevent damage to a membrane thin-film separating a vacuum area and a non-vacuum area while enabling a user to observe a sample at high resolution through forming a uniform inert gas atmosphere and preventing the diffusion and consumption of the inert gas. According to the present invention, the high-resolution scanning electron microscope can emit an electron beam discharged through an optical unit and an electron beam source arranged in the vacuum area to the surface of the sample in the non-vacuum area. The high-resolution scanning electron microscope includes: the membrane thin-film which separates the vacuum area and the non-vacuum area by being detachably attached to the lower end of the vacuum area while letting the electron beam pass there-through; a sample support which is installed on a sample stage in the non-vacuum area while having a sample mount ...

INTEGRATED OPTICAL AND CHARGED PARTICLE INSPECTION APPARATUS

The invention relates to an apparatus for inspecting a sample, equipped with a charged particle column for producing a focused beam of charged particles to observe or modify the sample, and an optical microscope to observe a region of interest on the sample as is observed by the charged particle beam or vice versa, the apparatus accommodated with a processing unit adapted and equipped for representing an image as generated with said column and an image as generated with said microscope, the unit further adapted for performing an alignment procedure mutually correlating a region of interest in one of said images wherein the alignment procedure involves detecting a change in the optical image as caused therein by the charged particle beam.

INSPECTION OR OBSERVATION DEVICE AND SPECIMEN INSPECTION OR OBSERVATION METHOD

Provided is an inspection device/observation device capable of enabling accurate inspection or observation of a specimen in an easy-to-use manner, using charged particle technology and optical technology. Provided is an inspection or observation device provided with: a first casing (7) that forms at least part of a first space (11) that is capable of being maintained in a vacuum state and is at least part of the region of a gap over which a primary charged particle beam emitted from a charged particle irradiation section reaches a specimen; a second casing (121) provided on the first casing (7), and forming at least part of a second space (12) that can store the specimen; a partition wall section (10) placed so as to be coaxial with the charged particle irradiation section when the primary charged particle beam irradiated from the charged particle irradiation section is irradiated onto the specimen, said partition wall section (10) separating the first space and the second space; and an ...

INSPECTION APPARATUS AND REPLACEABLE DOOR FOR A VACUUM CHAMBER OF SUCH AN INSPECTION APPARATUS AND A METHOD FOR OPERATING AN INSPECTION APPARATUS

An inspection apparatus is provided comprising in combination at least an optical microscope (2, 3, 4) and an ion- or electron microscope (7, 8) equipped with a source (7) for emitting a primary beam (9) of radiation to a sample (10) in a sample holder. The apparatus may comprise a detector (8) for detection of secondary radiation (11) backscattered from the sample and induced by the primary beam. The optical microscope is equipped with an light collecting device (2) to receive in use luminescence light (12) emitted by the sample and to focus it on a photon-detector (4).

Particle beam system having a hollow light guide

A system includes a particle optical system and a photosensitive detector. The particle optical system includes a charged particle beam source and an objective lens. The charged particle beam source is configured to generate a charged particle beam that travels along a particle beam path, and the objective lens is configured to focus the particle beam onto an object plane of the particle optical system. The system is configured such that a light beam path of the system extends from the object plane to the photosensitive detector.

Electron beam apparatus and method with surface height calculator and a dual projection optical unit

An electron beam apparatus including a table which mounts a specimen and is movable in three dimensional directions, an electron beam optical system irradiating an electron beam onto a specimen and for detecting a secondary electron emanated from the specimen by the irradiation of the electron beam, and a surface height detection system for detecting height of the surface of the specimen mounted on the table. A focus control system controls a relative position between a focus position of the electron optical system and the table in accordance with information of the height, and an image processing system obtains an image from the detected secondary electron and processes the obtained image to detect a defect on the surface of the specimen.

Method and apparatus for reviewing defects

The invention provides an apparatus and a method each capable of highly accurately reviewing at a high speed very small foreign matters and pattern defects occurring during a device production process for forming a circuit pattern on a substrate of semiconductor devices, etc. An objective lens having high NA is installed inside a vacuum chamber for an inspection object having a transparent film formed on the surface thereof and an illumination optical path is formed inside the objective lens so that dark visual field illumination can be made and reflected and scattered light of foreign matters or defects on the surface of the inspection object can be detected with high sensitivity.

Defective product inspection apparatus, probe positioning method and probe moving method

For adjusting a positional relationship between a specimen and a probe to measure an electric characteristic of the specimen through a contact therebetween, a base table holding a specimen table holding the specimen and a probe holder holding the probe is positioned at a first position to measure the positional relationship between the probe and the specimen at the first position, and subsequently positioned at a second position to measure the positional relationship therebetween at the second position so that the probe and the specimen are contact each other at the second position, the specimen table and the probe holder are movable with respect to each other on the base table at each of the first and second positions to adjust the positional relationship between the probe and the specimen, and a measuring accuracy at the second position is superior to a measuring accuracy at the first position.

light condensing unit

Particle beam microscope and method for operating the particle beam microscope

Electron beam device

Exterior view examination apparatus

An exterior view examination apparatus comprising a movable sample stage provided in a sample chamber of a scanning type electron microscope; a sample mounted on the stage; and an optical microscope which can observe the sample from an exterior of the chamber, mounted on the chamber in parallel with the scanning type electron microscope, the position of a surface part of the sample (mounted on the sample stage) to be observed, measured or analyzed being preliminary defined by the optical microscope, and the sample stage being moved by a certain amount thereby to bring the sample at the center of the visual field of the electron microscope.

Gas flow control for millisecond anneal system

Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate.

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma treatment; a radio frequency power supply configured to supply radio frequency power that generates plasma; a sample stage on which the sample is placed; and an ultraviolet light source configured to apply an ultraviolet ray. The apparatus further includes a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber. 1. A plasma processing apparatus comprising:a processing chamber in which a sample is subjected to plasma treatment;a radio frequency power supply configured to supply radio frequency power that generates plasma;a sample stage on which the sample is placed;an ultraviolet light source configured to apply an ultraviolet ray; anda controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber.2. A plasma processing apparatus comprising:a processing chamber in which a sample is subjected to plasma treatment;a radio frequency power supply configured to supply radio frequency power that generates plasma;a sample stage on which the sample is placed;an ultraviolet light source configured to apply an ultraviolet ray; anda controller configured to control the radio frequency power supply and the ultraviolet light source such that the radio frequency power is supplied into the processing chamber and a pulse-modulated ultraviolet ray is applied into the processing chamber.3. The plasma processing apparatus according to claim 1 ,wherein the sample stage includes an electrode to which a direct current voltage is applied, the sample being electrostatically chucked by the direct current voltage, andwherein the controller is configured to control the ...

SAMPLE PIECE RELOCATING DEVICE

This sample piece relocating device (10) includes an optical interferometry device (11), a sample piece carrying device (13), and a control device (21). The control device (21) controls the sample piece carrying device (13) based on information relating to processing in which a charged-particle beam device is used to irradiate a sample (S) with a charged-particle beam, thereby preparing a sample piece. The sample piece carrying device (13) controlled by the control device (21) separates and extracts the sample piece from the sample (S) and holds and carries the sample piece to a sample piece holder.

System and method for measuring angular luminescence in a charged particle microscope

Cathodoluminescence performed in the scanning electron microscope brings the advantage of localized excitation of individual microscopic structures. When luminescent structures are characterized, the intensity, wavelength, polarization and angular emission of the luminescence are all of interest. The invention provides an apparatus for determining the angular distribution of the radiated light, and in particular provides the user with rotational symmetry which is essential for the principle of measurement. This is compatible with additional polarization and spectral bandpass filtering methods used to characterize the luminescence and understand the specimen.

CHARGED PARTICLE ASSESSMENT SYSTEM AND METHOD

The present invention provides a charged particle assessment system comprising: a sample holder configured to hold a sample having a surface; a charged particle-optical device configured to project a charged particle beam towards the sample, the charged particle beam having a field of view corresponding to a portion of the surface of the sample, the charged particle-optical device having a facing surface facing the sample holder; and a projection assembly arranged to direct a light beam along a light path such that the light beam reflects off the facing surface up-beam, with respect to the light path, of being incident on the portion of the surface of the sample.

DEVICE FOR OBSERVING SAMPLE WITH PARTICLE BEAM AND OPTICAL MICROSCOPE

PROBLEM TO BE SOLVED: To provide a device for observing a sample 1 using a TEM lens barrel and a high-resolution scanning type microscope 10. SOLUTION: The sample position for observing the sample with the TEM lens barrel is different from a position for observing the sample with the optical microscope. In the optical microscope, the sample is inclined in the direction of the optical microscope. Preferably, by the scanning type microscope with monochromatic light, a lens element 11 in the optical microscope facing the position of the sample can be made fully small so that it can be positioned between a magnetic pole surface 8A and a magnetic pole surface 8B in a (magnetic) particle optical objective lens 7, which is in contrast to an objective lens system that has been used in optical microscopes conventionally and shows a large diameter. Further, the optical microscope or a component 11 close to at least the sample can be drawn in so that space is released in imaging in a TEM mode. COPYRIGHT ...

Elektronenstrahlvorrichtung

In einer Elektronenstrahlvorrichtung, die mit zwei Säulen versehen ist, die ein optisches Bestrahlungssystem und ein optisches Abbildungssystem umfassen, wird ein Photoelektronenbild zur Verwendung beim Einstellen des optischen Bestrahlungssystems schärfer gemacht. Die Elektronenstrahlvorrichtung umfasst: ein optisches Bestrahlungssystem, das eine Probe, die auf einer Bühne angeordnet ist, mit einem Elektronenstrahl bestrahlt; eine Lichtbestrahlungseinheit 50, die die Probe mit Licht bestrahlt, das ultraviolette Strahlen enthält; eine Probenspannungssteuereinheit 44, die eine negative Spannung an die Probe anlegt, so dass der Elektronenorbit invertiert wird, bevor der Elektronenstrahl die Probe erreicht; und ein optisches Abbildungssystem, das ein Spiegelelektronenbild durch Erzeugen eines Bildes von Spiegelelektronen, die durch Anlegen der negativen Spannung reflektiert werden, erfasst. Bei der Elektronenstrahlvorrichtung umfasst das optische Abbildungssystem einen Sensor 32, der ein Spiegelelektronenbild ...

Detektionsvorrichtung und Teilchenstrahlgerät mit Detektionsvorrichtung

Die Erfindung betrifft eine Detektionsvorrichtung (22) sowie ein Teilchenstrahlgerät (1) mit einer Detektionsvorrichtung (22). Bei der Detektionsvorrichtung (22) und dem Teilchenstrahlgerät (1) ist eine gute Effizienz der Detektion von Wechselwirkungsteilchen und elektromagnetischer Strahlung sichergestellt. Die Detektionsvorrichtung (22) weist einen Detektor (14) zur Detektion von elektromagnetischer Strahlung und/oder Wechselwirkungsteilchen und ein Filterelement (13) auf, durch das die elektromagnetische Strahlung transmittiert und das zur Verhinderung eines Auftreffens der Wechselwirkungsteilchen auf den Detektor (14) ausgebildet ist, wobei das Filterelement (13) zwischen einer ersten Position (A) und einer zweiten Position (B) beweglich angeordnet ist, das Filterelement (13) in der ersten Position (A) derart relativ zum Detektor (14) angeordnet ist, dass das Filterelement (13) ein Auftreffen der Wechselwirkungsteilchen auf den Detektor (14) verhindert, und wobei das Filterelement ( ...

Method for inspecting a sample and charged particle multi-beam device

In the scanning type microscope mathematical Image combination

ELECTRON BEAM CELL PROJECTION LITHOGRAPHY SYSTEM

SYSTEM FOR ELECTRON MICROSCOPY AND RAMAN SPECTROSCOPY

Sample analysis system comprising an electron microscope (2), a Raman spectrometer (3), optionally an optical microscope (16) and a sample stage (4). The sample stage is aligned with an optical axis (5) of the electron microscope (2) in a first position and with an optical axis (6) of the Raman spectrometer (3) and optical microscope in a second position. The sample analysis system (1) further comprises a cryogenic installation (7) in thermal contact with the sample stage (4) for cooling at least a sample positioned on the sample stage (4) in operation.

USER INTERFACE FOR AN ELECTRON MICROSCOPE

A user interface for operation of a scanning electron microscope device that combines lower magnification reference images and higher magnification images on the same screen to make it easier for a user who is not used to the high magnification of electron microscopes to readily determine where on the sample an image is being obtained and to understand the relationship between that image and the rest of the sample. Additionally, other screens, such as, for example, an archive screen and a settings screen allow the user to compare saved images and adjust the settings of the system, respectively.

System and method for spatially resolved optical metrology of an ion beam

Provided herein are systems and methods for spatially resolved optical metrology of an ion beam. In some embodiments, a system includes a chamber containing a plasma/ion source operable to deliver an ion beam to a wafer, and an optical collection module operable with the chamber, wherein the optical collection module includes an optical device for measuring a light signal from a volume of the ion beam. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the measured light signal, thus corresponding to the property of the sampled plasma volume.

ELECTRON BEAM APPLICATION APPARATUS AND INSPECTION METHOD

An electron beam application apparatus includes: an optical system configured to irradiate a sample with excitation light; an electron optical system configured to project, onto a camera, a photoelectron image formed by photoelectrons emitted from the sample irradiated with the excitation light; and a control unit. The optical system includes a light source configured to generate the excitation light and a pattern forming unit. The excitation light forms an optical pattern on a surface of the sample when the pattern forming unit is turned on, and the excitation light is emitted to the sample without forming the optical pattern on the surface of the sample when the pattern forming unit is turned off. The control unit adjusts the electron optical system based on feature data of a bright and dark pattern formed by the optical pattern in the photoelectron image obtained by turning on the pattern forming unit.

Particle beam system having a hollow light guide

Charged particle beam system with optical microscope

A charged particle beam system such as a focused ion beam system includes a vacuum chamber; an optical microscope located so as to have a filed of view within a first region of the chamber; a laser aligned with the optical microscope so as to project a laser beam into the first region; a charged particle beam column located within the chamber and arranged so as to focus a charged particle beam into a second region of the chamber; and specimen support means located in the chamber and moveable between a first position in the first region and a second position in the second region. The laser is used to mark a DUT with a registration mark which is visible in the images from the optical microscope and the charged particle beam. The position of the registration mark can be accurately determined in the optical image and the position of features which would otherwise be invisible in the charged particle beam image inferred.

Method for making specimen and apparatus thereof

The present invention is intended to provide a method and an apparatus for making a specimen for use in observation through a transparent electron microscope, including a step for milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step for observing a mark for detection of position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the step for milling, and a step for compensating positional drift of the focused ion beam during said step for milling in accordance with a result of the observation. The present invention provides an effect to strikingly raise the efficiency of TEM observation since a specimen for use in TEM observation can be made by precisely milling a thin ...

Verfahren zum Detektieren von Elektronen, Elektronendetektor und Inspektionssystem

Verfahren zum Detektieren einer Vielzahl von Elektronenstrahlen, umfassend:Richten einer Vielzahl von Elektronenstrahlen (9) auf eine Szintillator-Platte (207) mit einer Elektronenoptik (204), so dass die Elektronenstrahlen (9) an einer Vielzahl von mit Abstand (p2) voneinander angeordneten Auftrefforten (213) auf die Szintillator-Platte (207) auftreffen;Abbilden der Auftrefforte (213) auf eine Vielzahl von Lichtempfangsflächen (235) eines Lichtdetektors (237) mit einer Lichtoptik (223);Detektieren des auf die Lichtempfangsflächen (235) treffenden Lichts; undVerlagern der Auftrefforte (213), an denen die Elektronenstrahlen (9) auf die Szintillator-Platte (207) treffen, in eine Richtung (247) orthogonal zu einer Normalen (249) bezüglich einer Oberfläche (208) der Szintillator-Platte (207),dadurch gekennzeichnet, dassdie Lichtoptik (223) die Auftrefforte (213) und die verlagerten Auftrefforte (213') so auf die Vielzahl von Lichtempfangsflächen (235) abbildet, dass einem jeden der Vielzahl ...

ELECTRON MICROSCOPE WITH RAMAN SPECTROSCOPY

Electron microscope with raman spectroscopy

ELECTRON MICROSCOPE DEVICE

The present invention provides an electron microscope device, comprising a scanning electron microscope 2 and an optical microscope 3, wherein the scanning electron microscope has scanning means 10 for scanning an electron beam and an electron detector 12 for detecting electron 11 issued from a specimen 8 scanned over by the electron beam, and the scanning electron microscope acquires a scanning electron image based on a detection result from the electron detector, the optical microscope has a light emitting source 13 for illuminating an illumination light, and the optical microscope illuminates the illumination light to the specimen, and acquires an optical image by receiving a reflection light from the specimen, and wherein the electron detector has a fluorescent substance layer for electron-light conversion, a wavelength filter for restricting so that all or almost all of wavelength ranges of the fluorescent light from the fluorescent substance layer passes through, and a wavelength ...

Electronic beam unit projection stamp mark system

Method for inspecting a sample and charged particle multi - beam device

Method for inspecting a specimen and charged particle multi-beam device

ELECTRON MICROSCOPE WITH RAMAN SPECTROSCOPY

Electron microscope provided, in the direction of the longitudinal axis, with at least one electron beam generation system, a condenser and objective lens system, a specimen chamber with a specimen mount, a projection lens system with imaging screen for the purpose of transmission electron microscopy (TEM) and/or an electron detector for the purpose of scanning electron microscopy (SEM). The microscope is used in combination with an externally positioned Raman spectrometer and an associated light source for injecting and extracting, via a window in the microscope wall, a light beam to be directed at the specimen, and specimen-related Raman radiation, respectively. In the specimen chamber, a light beam and Raman radiation guide system is provided with an optical guide to guide the light beam to - and the Raman radiation from - the specimen. The guide system and the specimen mount are displaceable with respect to one another for mutual alignment of the specimen and the optical axis of the ...

HIGH-RESOLUTION OPTICAL CHANNEL FOR NON-DESTRUCTIVE NAVIGATION AND PROCESSING OF INTEGRATED CIRCUITS

An optical-fiber based light channel system is included in an ion/electron beam tool for imaging and/or processing integrated circuits. The optical channel system includes an image collection portion, an optical fiber image transmission portion and a detector portion. The image collection portion includes micro-optical components and has submillimeter dimensions, so that it is easily accommodated within the working distance of the ion/electron beam tool. The entire system is sufficiently compact and lightweight so that it may easily be mounted on a translation stage inside the sample chamber, which permits the optical channel to be mechanically extended and retracted to avoid blocking the primary ion or electron beam. The system may be mounted to a translation stage or to a gas injector assembly, which may itself be mounted to a flange plate on the chamber wall with feed-through ports for electrical and optical signals.

MARKING APPARATUS AND MARKING METHOD

In accordance with an embodiment, a marking apparatus includes a charged particle beam device and a marking unit. The charged particle beam device generates a charged particle beam, irradiates a sample including a laminated body with the charged particle beam, detects secondary charged particles generated from the sample, and acquires a sample image. The marking unit bores a hole reaching at least a second layer from a surface layer in the laminated body in a viewing field of the charged particle beam device. 1. A marking apparatus comprising:a charged particle beam device configured to generate a charged particle beam, irradiate a sample comprising a laminated body with the charged particle beam, detect secondary charged particles generated from the sample, and acquire a sample image; anda marking unit configured to form a hole which reaches at least a second layer from a surface layer in the laminated body in an observation viewing field of the sample provided by the charged particle beam device.2. The apparatus of claim 1 ,wherein the marking unit comprises a scriber having at least a tip made of a material with higher hardness than that of the laminated body.3. The apparatus of claim 2 ,wherein the marking unit comprises a marker moving mechanism configured to adjust an angle of the scriber relative to a surface of the sample.4. The apparatus of claim 3 ,wherein the scriber is movable in forward and backward directions, andthe marker moving mechanism is further configured to adjust amounts of forward and backward movements of the scriber.5. The apparatus of claim 2 , further comprising a stage configured to move the sample in arbitrary directions while the scriber is being stuck in the sample.6. The apparatus of claim 2 ,wherein the charged particle beam device comprises an objective lens configured to adjust a focal position of the charged particle beam,the scriber is arranged to be coupled with the objective lens, andthe marking unit comprises an objective ...

Detector for Use in Charged-Particle Microscopy

A method of investigating a sample using a charged-particle microscope is disclosed. By directing an imaging beam of charged particles at a sample, a resulting flux of output radiation is detected from the sample. At least a portion of the output radiation is examined using a detector, the detector comprising a Solid State Photo-Multiplier. The Solid State Photo-Multiplier is biased so that its gain is matched to the magnitude of output radiation flux.

Apparatus of plural charged-particle beams

A new multi-beam apparatus with a total FOV variable in size, orientation and incident angle, is proposed. The new apparatus provides more flexibility to speed the sample observation and enable more samples observable. More specifically, as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry, the new apparatus provide more possibilities to achieve a high throughput and detect more kinds of defects.

Cluster tool for microscopic processing of samples

A cluster tool includes multiple tools (104) for microscopic processing of a sample positioned around a rotatable base (102). A sample holder on the base rotates the sample between the working areas of the tools. A slidable vacuum seal maintains a vacuum in a sample chamber for tools that require a vacuum.

DOWNSIZED SCANNING ELECTRON MICROSCOPE

PROBLEM TO BE SOLVED: To provide a scanning electron microscope which is of low cost, easy to use, and can make it sufficiently small in size as can be put on, for example, a table in a classroom. SOLUTION: The downsized electron microscope uses a removable sample holder which has a wall to form a part of a vacuum region where a sample exists. Since the microscope has the vacuum region using the removal sample holder, the volume of air requiring evacuation before imaging is reduced remarkably, and the microscope can be evacuated rapidly. In a preferable embodiment, a sliding vacuum seal enables positioning of the sample holder below an electron column, and the sample holder firstly passes through underneath a vacuum buffer and the air in the sample holder is removed. COPYRIGHT: (C)2011,JPO&INPIT ...

Mikroskopie mehrerer Proben mit optischer Mikroskopie und Teilchenstrahlmikroskopie

Ein Verfahren zur Mikroskopie von mehreren Proben mit optischer Mikroskopie und Teilchenstrahlmikroskopie, sieht vor, daß a) die Proben in eine Teilmenge und eine Restmenge aufgeteilt werden, b) die Proben der Teilmenge so präpariert werden, daß sie Registriermarker enthalten, die sowohl in der optischen Mikroskopie als auch in der Teilchenstrahlmikroskopie sichtbar sind, c) die Proben der Teilmenge mit der optischen Mikroskopie und mit der Teilchenstrahlmikroskopie abgebildet werden, so daß für jede Probe der Teilmenge ein Paar aus optischem Mikroskopiebild und Teilchenstrahlmikroskopiebild gewonnen wird, d) die Paare aus optischem Mikroskopiebild und Teilchenstrahlmikroskopiebild unter Rückgriff auf die Registriermarker zueinander lageregistriert werden, e) die optischen Mikroskopiebilder und die Teilchenstrahlmikroskopiebilder der lageregistrierten Paare modifiziert werden, indem die Registriermarker aus den Bildern entfernt werden, f) anhand der modifizerten optischen Mikroskopiebilder ...

Particle beam microscope and method of operating the particle microscope

A method for operating a particle beam microscope 92 is disclosed and more specifically wherein the positioning of the sample/sample holder (Fig. 1, 10, 11, 12) is more easily carried out by the operator. At least one of light rays which emanate from a structure (10, 11, 12, 20) and/or particles which emanate from the structure (10, 11, 12, 20) are detected to generate a surface model of the structure. The position and orientation of the surface model of the structure relative to an object region OR can then also be determined. A location P relative to the surface model of the structure is determined and the object is positioned depending on the generated surface model of the structure, the determined position and orientation of the surface model of the structure, and on the determined measurement location P.

Light condensing unit

ELECTRON MICROSCOPE AND OBSERVATION METHOD

INSTALLATION AND PROCEEDED Of OBSERVATION OF TWO IDENTICAL SPECIMENS

Electron beam device

METHOD FOR PROTECTING THE SURFACE OF AN OPTICAL COMPONENT AND DEVICE FOR PROCESSING WORK PIECES

The invention relates to a method for protecting the surface of an optical component, wherein an object (8) from which gaseous, liquid or solid substances can be released, in particular a work piece (8) to be processed, is provided in an evacuated vacuum chamber (2) and an optical device is used to observe and/or process the object (8). An optical component (10, 28, 40) of the optical device, having a surface (12, 29, 48) that faces the object and is accessible for the gaseous, liquid or solid substances released from the object (8), is positioned in an optical path (9, 39) of the optical device that extends to the object (8). The surface (12, 29, 48) is protected from the released substances, wherein a gas flow directed in the direction of the object (8) is generated between the surface (12, 29, 48) and the object (8) in the optical path (9, 39). The invention further relates to a device for processing a work piece.

COMBINATION LASER AND CHARGED PARTICLE BEAM SYSTEM

A combined laser and charged particle beam system. A pulsed laser enables milling of a sample at material removal rates several orders of magnitude larger than possible for a focused ion beam. In some embodiments, a scanning electron microscope enables high resolution imaging of the sample during laser processing. In some embodiments, a focused ion beam enables more precise milling of the sample. A method and structure for deactivating the imaging detectors during laser milling enables the removal of imaging artifacts arising from saturation of the detector due to a plasma plume generated by the laser beam. In some embodiments, two types of detectors are employed: type-1 detectors provide high gain imaging during scanning of the sample with an electron or ion beam, while type-2 detectors enable lower gain imaging and endpoint detection during laser milling.

INTEGRATED OPTICAL AND CHARGED PARTICLE INSPECTION APPARATUS

The invention relates to an apparatus for inspecting a sample, equipped with a charged particle column for producing a focused beam of charged particles to observe or modify the sample, and an optical microscope to observe a region of interest on the sample as is observed by the charged particle beam or vice versa, the apparatus accommodated with a processing unit adapted and equipped for representing an image as generated with said column and an image as generated with said microscope, the unit further adapted for performing an alignment procedure mutually correlating a region of interest in one of said images wherein the alignment procedure involves detecting a change in the optical image as caused therein by the charged particle beam.

Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus

An electron beam apparatus including a table which mounts a specimen and is movable in three dimensional directions, an electron beam optical system irradiating an electron beam onto a specimen and for detecting a secondary electron emanated from the specimen by the irradiation of the electron beam, and a surface height detection system for detecting height of the surface of the specimen mounted on the table. A focus control system controls a relative position between a focus position of the electron optical system and the table in accordance with information of the height, and an image processing system obtains an image from the detected secondary electron and processes the obtained image to detect a defect on the surface of the specimen.

Combination Laser and Charged Particle Beam System

A combined laser and charged particle beam system. A pulsed laser enables milling of a sample at material removal rates several orders of magnitude larger than possible for a focused ion beam. In some embodiments, a scanning electron microscope enables high resolution imaging of the sample during laser processing. In some embodiments, a focused ion beam enables more precise milling of the sample. A method and structure for deactivating the imaging detectors during laser milling enables the removal of imaging artifacts arising from saturation of the detector due to a plasma plume generated by the laser beam. In some embodiments, two types of detectors are employed: type-1 detectors provide high gain imaging during scanning of the sample with an electron or ion beam, while type-2 detectors enable lower gain imaging and endpoint detection during laser milling.

Method and device for time-resolved pump-probe electron microscopy

A method of time-resolved pump-probe electron microscopy, comprises the steps of irradiating a sample (1) with a photonic pump pulse (2) being directed on a pump pulse path (3) from a photonic source to the sample (1), irradiating the sample (1) with an electron probe pulse (4) being directed on an electron pulse path (5) from an electron pulse source (10) to the sample (1), wherein the photonic pump pulse (2) and the electron probe pulse (4) arrive at the sample (1) with a predetermined temporal relationship relative to each other, and detecting a sample response to the electron probe pulse (4) irradiation with a detector device (20), wherein the photonic source comprises a photonic lattice structure (30) being arranged adjacent to the electron pulse path (5), and the photonic pump pulse (2) is created by an interaction of the electron probe pulse (4) with the photonic lattice structure (30). Furthermore, an electron microscopy apparatus, configured for time-resolved pump-probe electron ...

In situ reactivation of fluorescence marker

Related optical and charged particle microscope

Apparatus with optical cavity for determining process rate

An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support is within the processing chamber. A gas inlet provides a process gas into the processing chamber. A gas source provides the process gas to the gas inlet. An exhaust pump pumps gas from the processing chamber. A parameter measurement system comprises a cavity ring down device in fluid communication with the processing chamber, comprising a first cavity ring down mirror on a first side of the cavity ring down device and a second cavity ring down mirror on a second side of the cavity ring down device spaced apart from the first cavity ring down mirror. At least one laser light source is optically coupled to the first cavity ring down mirror. A light detector is optically coupled to either the first cavity ring down mirror or the second cavity ring down mirror.

Pattern inspecting method and apparatus thereof, and pattern inspecting method on basis of electron beam images and apparatus thereof

A pattern inspecting method and apparatus for inspecting a defect or defective candidate of patterns on a sample includes picking up an image of a sample by shifting a sampling position on the sample, measuring geometric distortion in an image of a standard sample, beforehand, and defining a size for which the measured geometric distortion is neglectable, obtaining a first image of the sample and a second image to be compared with the first image, dividing the first image and the second stage into images of a division unit having a size not greater than the defined size, comparing a divided image of the first image with a divided image of the second image, and for calculating a difference in gradation values between both of the divided images. The defect or the defect candidate of the sample is extracted in accordance with the difference in the gradation values.

ELECTRON BEAM DEVICE

An electron beam device obtains contrast reflecting an electronic state of a sample with high sensitivity. The device includes an electron optical system which emits an electron beam to a sample and detects electrons emitted from the sample; a light pulse emission system that emits a light pulse to the sample; a synchronization processing unit that samples the emitted electrons; an image signal processing unit which forms an image by a detection signal output based upon the emitted electrons detected by the electron optical system; and a device control unit for setting a control condition of the electron optical system. The device control unit sets a sampling frequency for detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time. 1. An electron beam device , comprising:an electron optical system that emits an electron beam to a sample and detects emitted electrons emitted from the sample;a light pulse emission system that emits a light pulse to the sample;a synchronization processing unit configured to perform detection sampling of the emitted electrons in synchronization with a deflection signal of the electron beam in the electron optical system;an image signal processing unit configured to form an image by a detection signal outputted based upon the emitted electrons detected by the electron optical system; anda device control unit configured to set a control condition of the electron optical system,wherein when the time required for the electron beam to scan a region of the sample corresponding to one pixel of the image is defined as unit pixel time, the device control unit sets a sampling frequency for performing the detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time.2. The electron beam device according to claim 1 , ...

USER INTERFACE FOR AN ELECTRON MICROSCOPE

Ladungsteilchenstrahlvorrichtung

Beschrieben ist eine Ladungsteilchenstrahlvorrichtung, bei der die von einer Probe emittierten Ladungsteilchen wirkungsvoll an einer Stelle aufgenommen werden, die sich so nahe wie möglich an der Probe befindet, wobei diese Stelle in der Objektivlinse liegt. Die Ladungsteilchenstrahlvorrichtung umfaßt eine Ladungsteilchenstrahl-Aufnahmefläche (105) mit einem Szintillator zum Emittieren von Licht durch ein Ladungsteilchen; einen Photodetektor (107) zum Erfassen des vom Szintillator emittierten Lichts; einen Spiegel (108) zum Führen des vom Szintillator emittierten Lichts zum Photodetektor (107) und eine Objektivlinse (100) zum Fokussieren des Ladungsteilchenstrahls auf eine Probe. Der Abstand (Lsm) zwischen der Ladungsteilchenstrahl-Aufnahmefläche (105) und dem Spiegel (108) ist größer als der Abstand (Lpm) zwischen dem Photodetektor (107) und dem Spiegel (108), und die Ladungsteilchenstrahl-Aufnahmefläche (105), der Spiegel (108) und der Photodetektor (107) sind innerhalb der Objektivlinse ...

Light condensing unit with guided movement mechanisms

A light condensing unit is located between a radiation source and a sample being analysed. The unit comprises a mirror 41 located on a holding shaft 6 that is arranged to collect light, such as cathode luminescence (cathodoluminescence), coming from the sample that is being irradiated. The unit comprises moving mechanisms 81, 82 and 83 to move the shaft in X axial, Y axial and Z axial directions respectively using corresponding moving guides 811, 821 and 831; tilt mechanism 9 with a tilt guide arranged to tilt the holding shaft around an axis 9R that is orthogonal to the direction of irradiation and to the centre axis of the shaft; and a rotation mechanism 10 with rotation guide 101 that rotates the holding shaft around its centre axis. These mechanisms allow the focusing mirror to be moved independently in each of the directions, simplifying positional adjustments and improving positional repeatability.

Optical system with compensation lens

Cluster tool for microscopic processing of samples

Device to regulate the position of a sample in a microanalysor with rays chi with excitation by electrons

CHARGED PARTICLE BEAM PROCESSING SYSTEM WITH VISUAL AND INFRARED IMAGING

A charged particle beam system for processing substrates is disclosed, comprising a charged particle column, combination infrared radiation and visible light illumination and imaging subsystems, in-vacuum optics, and a precision stage for supporting and positioning the substrate alternately under the charged particle column and the imaging system. The axes of the charged particle column and imaging system are offset to enable much closer working distances for both imaging and beam processing than would be possible in a single integrated assembly. A method for extremely accurately calibrating the offset between the column and imaging system is disclosed, enabling beam processing at precisely-determined locations on the substrate. The imaging system is capable of locating sub-surface features on the substrate which cannot be seen using the charged particle beam. Two illumination modes are disclosed, enabling both bright-field and dark-field imaging in infrared radiation and visible light.

Pattern inspecting method and apparatus thereof, and pattern inspecting method on basis of electron beam images and apparatus thereof

A pattern inspecting method and apparatus for inspecting a defect or defective candidate of patterns on a sample includes picking up an image of a sample by shifting a sampling position on the sample, measuring geometric distortion in an image of a standard sample, beforehand, and defining a size for which the measured geometric distortion is neglectable, obtaining a first image of the sample and a second image to be compared with the first image, dividing the first image and the second stage into images of a division unit having a size not greater than the defined size, comparing a divided image of the first image with a divided image of the second image, and for calculating a difference in gradation values between both of the divided images. The defect or the defect candidate of the sample is extracted in accordance with the difference in the gradation values.

INTEGRATED OPTICAL AND CHARGED PARTICLE INSPECTION APPARATUS

An apparatus for inspecting a sample, is equipped with a charged particle column for producing a focused beam of charged particles to observe or modify the sample, and an optical microscope to observe a region of interest on the sample as is observed by the charged particle beam or vice versa. The apparatus is accommodated with a processing unit adapted and equipped to represent an image as generated with the column and an image as generated with the microscope. The unit is further adapted to perform an alignment procedure mutually correlating a region of interest in one of the images, wherein the alignment procedure involves detecting a change in the optical image as caused by the charged particle beam.

High-resolution optical channel for non-destructive navigation and processing of integrated circuits

An optical-fiber based light channel system is included in an ion/electron beam tool for imaging and/or processing integrated circuits. The optical channel system includes an image collection portion, an optical fiber image transmission portion and a detector portion. The image collection portion includes micro-optical components and has submillimeter dimensions, so that it is easily accommodated within the working distance of the ion/electron beam tool. The entire system is sufficiently compact and lightweight so that it may easily be mounted on a translation stage inside the sample chamber, which permits the optical channel to be mechanically extended and retracted to avoid blocking the primary ion or electron beam. The system may be mounted to a translation stage or to a gas injector assembly, which may itself be mounted to a flange plate on the chamber wall with feed-through ports for electrical and optical signals.

User interface for an electron microscope

A user interface for operation of a scanning electron microscope device that combines lower magnification reference images and higher magnification images on the same screen to make it easier for a user who is not used to the high magnification of electron microscopes to readily determine where on the sample an image is being obtained and to understand the relationship between that image and the rest of the sample. Additionally, other screens, such as, for example, an archive screen and a settings screen allow the user to compare saved images and adjust the settings of the system, respectively.

Charged Particle Beam Device and Optical Examination Device

In a semiconductor manufacturing process, it is necessary to cut a die close to the edge of a wafer in order to obtain as many dies as possible from one wafer. Accordingly, with respect to a charged particle beam device and an optical inspection device used in a semiconductor manufacturing process, there is a demand for detecting the height of the wafer close to the edge of the wafer with high accuracy, in order to measure or examine close to the edge of the wafer with high accuracy. Further, there is a demand for high speed height-detection in order to realize high throughput for the semiconductor manufacturing process. In the present invention, the foregoing can be achieved by the following configuration: sandwiching a target region on a wafer, a first pattern and a second pattern are projected onto one side and the other side respectively of the target region from an oblique direction with respect to the wafer top-surface, enabling an image of the first pattern and/or second pattern ...

Charged particle beam system with optical microscope

A charged particle beam system such as a focused ion beam system includes a vacuum chamber; an optical microscope located so as to have a filed of view within a first region of the chamber; a laser aligned with the optical microscope so as to project a laser beam into the first region; a charged particle beam column located within the chamber and arranged so as to focus a charged particle beam into a second region of the chamber; and specimen support located in the chamber and moveable between a first position in the first region and a second position in the second region. The laser is used to mark a DUT with a registration mark which is visible in the images from the optical microscope and the charged particle beam. The position of the registration mark can be accurately determined in the optical image and the position of features which would otherwise be invisible in the charged particle beam image inferred.

INSPECTION APPARATUS AND REPLACEABLE DOOR FOR A VACUUM CHAMBER OF SUCH AN INSPECTION APPARATUS AND A METHOD FOR OPERATING AN INSPECTION APPARATUS

ELECTRON MICROSCOPE DEVICE

The present invention provides an electron microscope device, comprising a scanning electron microscope 2 and an optical microscope 3, wherein the scanning electron microscope has scanning means 10 for scanning an electron beam and an electron detector 12 for detecting electron 11 issued from a specimen 8 scanned over by the electron beam, and the scanning electron microscope acquires a scanning electron image based on a detection result from the electron detector, the optical microscope has a light emitting source 13 for illuminating an illumination light, and the optical microscope illuminates the illumination light to the specimen, and acquires an optical image by receiving a reflection light from the specimen, and wherein the electron detector has a fluorescent substance layer for electron-light conversion, a wavelength filter for restricting so that all or almost all of wavelength ranges of the fluorescent light from the fluorescent substance layer passes through, and a wavelength ...

APPARATUS AND METHOD FOR CORRECTING ARRAYED ASTIGMATISM IN A MULTI-COLUMN SCANNING ELECTRON MICROSCOPY SYSTEM

Observation apparatus for semiconductors during manufacturing of PCBs has microscopes, plate and manoeuvre panel allowing corresponding displacement of specimens and microscopes

L'invention concerne une installation (10) d'observation microscopique d'un premier spécimen, associé suivant un même plan à un second - spécimen identique, comportant, dans une enceinte d'observation sous vide (12), un microscope (16) à interaction particulaire par réflexion, et des moyens (26) de support du premier spécimen en regard du microscope (16) à interaction particulaire par réflexion. Elle comporte, un microscope optique à réflexion (14) comportant des moyens d'observation optique du second spécimen. Les axes d'observation (X-X, Y-Y) des deux microscopes (14, 16) sont parallèles et maintenus écartés de l'intervalle séparant les premier et second spécimens, de sorte que les deux microscopes (14, 16) observent des régions identiques et correspondantes des deux spécimens.

System for imaging object by discharging an area that is scanned by an electron beam

High resolution analytical probe station

A method and system for probing with electrical test signals on an integrated circuit specimen using a scanning electron microscope (SEM) positioned for observing a surface of the specimen exposing electrically conductive terminals on the specimen. A carrier is provided for supporting the specimen in relation to the scanning electron microscope while a computer acquires an image identifying conductive path indicia of the surface of the specimen from the scanning electron microscope. A motorized manipulator remotely controlled by the computer manipulates a plurality of probes positionable on the surface of the specimen for conveying electrical test signals inside a vacuum chamber inner enclosure which houses the scanning electron microscope, the carrier, the motorized manipulator and the plurality of probes for analyzing the specimen in a vacuum. A feedthrough on the vacuum chamber couples electrical signals from the computer to the motorized manipulator and the plurality of probes. The ...

METHOD FOR INSPECTING A SPECIMEN AND CHARGED PARTICLE MULTI-BEAM DEVICE

A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; correcting a field curvature with at least two electrodes, wherein the at least two electrodes include aperture openings; directing the primary charged particle beamlets with a lens towards an objective lens; guiding the primary charged particle beamlets through a deflector array arranged within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlets through a coma free point of the objective lens; and focusing the primary charged particle beamlets on separate locations on the specimen with the objective lens.

RADIATION DETECTION DEVICE, RECORDING MEDIUM, AND POSITIONING METHOD

The radiation detection device includes: a sample holding unit; an optical microscope configured to observe a sample held by the sample holding unit; an irradiation unit that irradiates the sample with radiation; a detection unit that detects radiation generated from the sample; an adjustment unit that adjusts a relationship between a focal position of the optical microscope and a position of the sample such that the optical microscope is focused on one portion of the sample; a change unit that changes a position, on which the optical microscope is to be focused, on the sample; an imaging unit that creates a partial image captured by the optical microscope at the changed position on the sample in a state in which the adjustment unit performs adjustment for focusing; and a sample image creation unit that creates a sample image by combining a plurality of partial images created by the imaging unit. 111-. (canceled)12. A radiation detection device comprising:a sample holding unit;an optical microscope configured to observe a sample held by the sample holding unit;an irradiation unit that irradiates the sample observed by the optical microscope with radiation;a detection unit that detects radiation generated from the sample irradiated with the radiation;a focal position adjustment unit that adjusts a focal position of the optical microscope;a driving unit that drives the sample holding unit;a processor; anda memory, wherein the processor is operable to:adjust a relationship between the focal position and a position of the sample such that the optical microscope is focused on one portion of the sample using at least one of the focal position adjustment unit and the driving unit;change a position, on which the optical microscope is to be focused, on the sample using the driving unit;create a partial image captured by the optical microscope at the changed position on the sample in a state in which adjustment of the relationship is performed for focusing; andcreate a sample ...

Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus

An electron beam apparatus equipped with a height detection system includes an electron beam unit emitting an electron beam to the specimen, and a height detection system for detecting height of the specimen which is set on a table. The height detection system includes an illumination system configured to direct first and second beams of light through a mask with a multi-slit pattern to a surface of the specimen at substantially opposite azimuth angles and at substantially equal angles of incidence, first and second detectors which respectively detect first and second multi-slit images of the first and second beams reflected from the specimen and generate output signals thereof, and a device which receives the output signals and generates a comparison signal which is responsive to the height of the specimen. An objective lens of the electron beam unit is controlled in accordance with the comparison signal.

Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus

An electron beam apparatus including a table which mounts a specimen and is movable in three dimensional directions, an electron beam optical system irradiating an electron beam onto a specimen and for detecting a secondary electron emanated from the specimen by the irradiation of the electron beam, and a surface height detection system for detecting height of the surface of the specimen mounted on the table. A focus control system controls a relative position between a focus position of the electron optical system and the table in accordance with information of the height, and an image processing system obtains an image from the detected secondary electron and processes the obtained image to detect a defect on the surface of the specimen.

Surface processing apparatus

A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.

Method of performing spectroscopy in a Transmission Charged-Particle Microscope

A method of performing spectroscopy in a Transmission Charged-Particle Microscope comprising: 2. A method according to claim 1 , wherein:said spectroscopic apparatus is an electron energy loss spectroscopy (EELS) device;said first portion comprises an EELS Core Loss Peak;said selected region comprises a feature selected from the group comprising an EELS Zero Loss Peak and an EELS Plasmon Resonance Peak.3. A method according to claim 1 , wherein said radiation sensor is movable in at least a direction parallel to a dispersion direction of said dispersing device.4. A method according to claim 1 , wherein said adjustable aperture device comprises a first plate having a first edge and a second plate having a second edge claim 1 , said edges opposing each other across an intervening gap claim 1 , at least said first plate being connected to an actuator that can be used to move it relative to said second plate so as to adjust said gap.5. A method according to claim 4 , wherein said sensor is attached to a side of said first plate distal from said detector and proximal to said first edge.6. A method according to claim 1 , wherein said sensor is arranged to extend in a transverse direction substantially perpendicular to a dispersion direction of said dispersing device.7. A method according to claim 1 , wherein said detection result adjustment comprises at least one of the following actions:deconvolving said detection result using said sensing result and said detection result as input to a mathematical deconvolution procedure;correcting for a contribution of an instrument-related transfer function in said detection result;determining an absolute energy scale for said detection result;determining an absolute intensity scale for said detection result.8. A method according to claim 1 , wherein said sensing result is used as input to a feedback loop to adjust an output of a power supply connected to at least one of said source claim 1 , illuminator claim 1 , imaging system and ...

System for electron microscopy and Raman spectroscopy

Sample analysis system comprising an electron microscope (2), a Raman spectrometer (3), optionally an optical microscope (16) and a sample stage (4). The sample stage is aligned with an optical axis (5) of the electron microscope (2) in a first position and with an optical axis (6) of the Raman spectrometer (3) and optical microscope in a second position. The sample analysis system (1) further comprises a cryogenic installation (7) in thermal contact with the sample stage (4) for cooling at least a sample positioned on the sample stage (4) in operation.

Correlative optical and charged particle microscope

APPARATUS AND METHOD FOR DETECTING ONE OR MORE SCANNING CHARGED PARTICLE BEAMS

Ladungsteilchenstrahlvorrichtung, Bilderzeugungsverfahren, Beobachtungssystem

Ladungsteilchenstrahlvorrichtung, umfassend:einen optischen Linsentubus (2) für Ladungsteilchen, der geeignet ist, eine Probe (6) mit einem Primärladungsteilchenstrahl zu bestrahlen;eine Probenbühne (5), die geeignet ist, die anbringbare/abnehmbare Anordnung eines lichtemittierenden Elements (500) oder eines Probentischs (600) mit dem lichtemittierenden Element zu ermöglichen, wobei das lichtemittierende Element Licht emittiert, indem es mit einem Transmissionsladungsteilchen bestrahlt wird, das durch ein Inneres der Probe durchgelassen wurde;einen Detektor (503), der geeignet ist, ein Signal von der Probe zu erkennen; undeine Steuereinheit (35-37), die geeignet ist, den Detektor in einem Transmissionsladungsteilchen-Bildmodus zu steuern, um auf der Basis eines Erkennungssignals des Lichts vom lichtemittierenden Element ein Transmissionsladungsteilchenbild zu erzeugen, und in einem Sekundärladungsteilchen-Bildmodus zu steuern, um auf der Basis eines Erkennungssignals, das durch ein Sekundärladungsteilchen ...

Sight glass for vacuum treatment apparatus, for optically controlling processes in plant chamber, comprises a glass sheet and an enclosure, and an optical line, where glass sheet is prism, such that optical line is angled at least one time

Sight glass (1), which is present in the form of a insight device for a vacuum treatment apparatus, for optically controlling processes in a plant chamber (2), comprises a glass sheet and an enclosure, and an optical line, which describes the optical path through the sight glass, where the glass sheet is a prism, such that the optical line is angled at least one time. The plant chamber comprises a wall (3), which separates atmospheric pressure region (4) from sub-atmospheric pressure region (5) and the glass sheet is fixed in the enclosure and the enclosure is fixed in the wall. An independent claim is also included for an arrangement comprising a sight glass, where the transmission of an optical signal from a source to a receiver is provided along the optical line.

Improvements brought to the apparatuses with rays chi for the matter analysis

ELECTRON BEAM APPARATUS

Particle beam system having a hollow light guide

A system includes a particle optical system and a photosensitive detector. The particle optical system includes a charged particle beam source and an objective lens. The charged particle beam source is configured to generate a charged particle beam that travels along a particle beam path, and the objective lens is configured to focus the particle beam onto an object plane of the particle optical system. The system is configured such that a light beam path of the system extends from the object plane to the photosensitive detector.

Inspection apparatus and replaceable door for a vacuum chamber of such an inspection apparatus and a method for operating an inspection apparatus

An inspection apparatus is provided comprising in combination at least an optical microscope ( 2, 3, 4 ) and an ion- or electron microscope ( 7, 8 ) equipped with a source ( 7 ) for emitting a primary beam ( 9 ) of radiation to a sample ( 10 ) in a sample holder. The apparatus may comprise a detector ( 8 ) for detection of secondary radiation ( 11 ) backscattered from the sample and induced by the primary beam. The optical microscope is equipped with an light collecting device ( 2 ) to receive in use luminescence light ( 12 ) emitted by the sample and to focus it on a photon-detector ( 4 ).

SYSTEM AND METHOD FOR IRRADIATING AN ETEM-SAMPLE WITH LIGHT

A system and method for transmission electron microscopy (TEM) of a photocatalyst sample exposed to UV and/or visible light at irradiance levels comparable to those provided by irradiation with sunlight or at least 1,000 W/cmwhile maintaining the spatial resolution of interrogation of at least 0.14 nm. Light is delivered to the sample substantially transversely to the sample's surface from an external broadband source through an optical fiber with an output facet formed at an acute angle with respect to the fiber axis. The light delivery system is adapted to not interrupt an operation of auxiliary TEM systems responsible for changing the TEM-chamber environment. 1. A transmission-electron microscope (TEM) system for interrogation of a photocatalyst sample , the TEM system comprising:a TEM chamber;an electron gun and an electron lens in the TEM chamber, said electron gun and an electron lens defining a TEM column and a first direction of propagation of an electron beam;a holder configured to support the photocatalyst sample with a surface thereof positioned substantially perpendicularly to said first direction; anda fiber-optic component having an axis extended in a second direction that is substantially transverse to said first direction, said fiber-optic component configured to deliver irradiating light from outside of the TEM chamber towards the photocatalyst sample and irradiate said photocatalyst sample with a beam of so delivered irradiating light at an angle of about 70 degrees or less as measured between an axis of said beam of light and a normal to the surface of the photocatalyst sample.2. A TEM system according to claim 1 , wherein said fiber-optic component includes a multimode quartz optical fiber defining an output facet of said fiber at an acute angle with respect to said axis.3. A TEM system according to claim 2 , wherein the acute angle is about 60 degrees.4. A TEM system according to claim 1 , further comprising a light source adapted to generate ...

Scanning Electron Microscope Objective Lens Calibration

Objective lens alignment of a scanning electron microscope review tool with fewer image acquisitions can be obtained using the disclosed techniques and systems. Two different X-Y voltage pairs for the scanning electron microscope can be determined based on images. A second image based on the first X-Y voltage pair can be used to determine a second X-Y voltage pair. The X-Y voltage pairs can be applied at the Q4 lens or other optical components of the scanning electron microscope. 1. A method comprising:receiving a first image at a control unit, wherein the first image provides alignment information of an objective lens in a scanning electron microscope system;determining, using the control unit, a first X-Y voltage pair based on the first image, wherein the first X-Y voltage pair provides alignment of the objective lens closer to a center of an alignment target than in the first image;communicating, using the control unit, the first X-Y voltage pair to the scanning electron microscope system;receiving a second image at the control unit, wherein the second image provides alignment information of the objective lens and the second image is a result of settings of the first X-Y voltage pair;determining, using the control unit, a second X-Y voltage pair based on the second image, wherein the second X-Y voltage pair provides alignment of the objective lens closer to the center of the alignment target than the first X-Y voltage pair; andcommunicating, using the control unit, the second X-Y voltage pair to the scanning electron microscope system.2. The method of claim 1 , wherein the first X-Y voltage pair is one class.3. The method of claim 1 , wherein the second X-Y voltage pair is a continuous value.4. The method of claim 1 , wherein the second X-Y voltage pair is based on an average of a plurality of results.5. The method of claim 1 , further comprising:applying the first X-Y voltage pair to a Q4 lens of the scanning electron microscope before generating the second ...

System for Electron Beam Detection

An electron beam detection apparatus includes a first aperture element including a first set of apertures. The apparatus includes a second aperture element including a second set of apertures. The second set of apertures is arranged in a pattern corresponding with the pattern of the first plurality of apertures. The detection apparatus includes an electron-photon conversion element configured to receive electrons of the electron beam transmitted through the first and second aperture elements. The electron-photon conversion element is configured to generate photons in response to the received electrons. The detection apparatus includes an optical assembly including one or more optical elements. The detection apparatus includes a detector assembly. The optical elements of the optical assembly are configured to direct the generated photons from the electron-photon conversion system to the detector assembly. 1. An apparatus for electron beam detection comprising:a first aperture element including a first plurality of apertures;a second aperture element including a second plurality of apertures, the second plurality of apertures arranged in a pattern corresponding with the pattern of the first plurality of apertures;a scintillator element configured to receive electrons of the patterned electron beam transmitted through the first aperture element and the second aperture element, wherein the scintillator element is configured to generate light in response to the received electrons;an optical guide assembly; anda light detector configured to measure a light signal from the scintillator element, wherein the optical guide assembly is configured to direct light generated by the scintillator element to the light detector.2. The apparatus of claim 1 , further comprising:a controller configured to determine a position of the electron beam based on the light signal measured by the light detector.3. The apparatus of claim 1 , wherein the optical guide assembly comprises:a light ...

Charged Particle Beam Apparatus and Setting Assisting Method

A GUI (graphical user interface) image includes an input portion and a reference image. The reference image includes a plan diagram and numerical value information. The plan diagram includes a figure indicating an electron penetration range, a figure indicating a characteristic X-ray generation range, and a figure indicating a back-scattered electron generation range. The numerical value information includes numerical values indicating sizes of these ranges. 1. A charged particle beam apparatus comprising:a calculator configured to calculate a size of a range of a physical phenomenon which occurs in a specimen when a charged particle beam is illuminated onto the specimen, based on specimen information and an illumination condition;a generator configured to generate a reference image having a plan diagram indicating the range of the physical phenomenon and numerical value information indicating the size of the range of the physical phenomenon; anda display configured to display the reference image when an actual illumination condition of the charged particle beam is set.2. The charged particle beam apparatus according to claim 1 , whereinthe calculator calculates a size of a penetration range of the charged particle beam and a size of a generation range of a signal caused by illumination of the charged particle beam, as the size of the range of the physical phenomenon.3. The charged particle beam apparatus according to claim 2 , whereinthe plan diagram comprises a first figure indicating the penetration range of the charged particle beam, and a second figure indicating the generation range of the signal, andthe numerical value information comprises a first numerical value indicating a size of the penetration range of the charged particle beam, and a second numerical value indicating a size of the generation range of the signal.4. The charged particle beam apparatus according to claim 3 , whereinthe plan diagram corresponds to a plane parallel to a surface of the ...

Electron microscope with improved imaging resolution

Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising an outer tube of electrically insulating material, and an inner skin of electrically conductive material with an electrical conductivity σ and a thickness t, with σt<0.1 Ω −1 .

3D DEFECT CHARACTERIZATION OF CRYSTALLINE SAMPLES IN A SCANNING TYPE ELECTRON MICROSCOPE

The invention relates to a method 3D defect characterization of crystalline samples in a scanning type electron microscope. The method comprises Irradiating a sample provided on a stage, selecting one set of crystal lattice planes of the sample and orienting said set to a first Bragg condition with respect to a primary electron beam impinging on said sample, and obtaining Electron Channeling Contrast Image for an area of interest on the sample. The method is characterized by performing, at least once, the steps of orienting said selected set of crystal lattice planes to a further Bragg condition by at least tilting the sample stage with the sample by a user-selected angle about a first tilt axis, and obtaining by Electron Channeling Contrast Image for a further area of interest. 1. A method of 3D defect characterization of crystalline samples in a scanning type electron microscope , said scanning type electron microscope comprising:a sample stage for holding a sample;an electron source for producing a primary electron beam, as well as an illuminator having an electron-optical axis, wherein said electron microscope is arranged for directing said primary electron beam through the illuminator so as to irradiate said sample for producing an interaction that causes particle radiation to emerge from the sample, said radiation including backscattered electrons (BSEs); andat least one detector for detecting said BSEs;wherein said method comprises the step of:irradiating said sample provided on said stage;selecting one set of crystal lattice planes of the sample and orienting said set of crystal lattice planes to a first Bragg condition with respect to the primary electron beam impinging on said sample;obtaining by means of said at least one detector an Electron Channeling Contrast Image for an area of interest on the sample;{'b': '1', 'orienting said selected set of crystal lattice planes to a further Bragg condition, by at least tilting the sample stage about a first tilt ...

Charged Particle Beam Device

Provided is a charged particle beam device using a detector that detects electromagnetic waves, in which a circumstance in a sample chamber can be checked, and a sample is observed with the detector at the same time. The charged particle beam device that observes a sample by using a charged particle beam, including: a component used for observing the sample; a detector that detects electromagnetic waves; a chamber scope that photographs a picture while irradiating the sample with the electromagnetic waves; and a control unit that controls the detector, the component, and an operation of the chamber scope, in which the control unit can be selectively operated in any one of a pre-photographing mode and an observation mode, the control unit causes the chamber scope to photograph the picture, in a state in which an operation of observing the sample by the detector is not performed in the pre-photographing mode, and the control unit, in the observation mode, does not cause the chamber scope to apply the electromagnetic waves, generates a guide image showing a positional relationship between the sample and the component based on the picture, and outputs the guide image.

Systems and methods for using multimodal imaging to determine structure and atomic composition of specimens

An imaging system that selectively alternates between a first, non-destructive imaging mode and a second, destructive imaging mode to analyze a specimen so as to determine an atomic structure and composition of the specimen is provided. The field ionization mode can be used to acquire first images of ionized atoms of an imaging gas present in a chamber having the specimen disposed therein, and the field evaporation mode can be used to acquire second images of ionized specimen atoms evaporated from a surface of the specimen with the imaging gas remaining in the chamber. The first and second image data can be analyzed in real time, during the specimen analysis, and results can be used to dynamically adjust operating parameters of the imaging system.

Electron Microscope and Measurement Method

An electron microscope is provided which can measure, with high sensitivity and high positional resolution, an amount of deflection of an electron beam occurring when it is transmitted through a sample. The electron microscope () is adapted to measure the amount of deflection of the electron beam (EB) when it is transmitted through the sample (S), and has an electron beam source () producing the electron beam (EB), an illumination lens system for focusing the electron beam (EB) onto the sample (S), an aperture () having an electron beam blocking portion () for providing a shield between a central portion (EB) and an outer peripheral portion (EB) of the cross section of the beam (EB) impinging on the sample (S), and a segmented detector () having a detection surface () for detecting the electron beam (EB) transmitted through the sample (S). The detection surface () is divided into a plurality of detector segments (D-D). 1. An electron microscope for measuring an amount of deflection of an electron beam occurring when it is transmitted through a sample , said electron microscope comprising:an electron beam source producing the electron beam;an illumination lens system for focusing the electron beam onto the sample;an aperture having an electron beam blocking portion that provides a shield between a central portion and an outer peripheral portion of the cross section of the electron beam impinging on the sample; anda segmented detector having a detection surface for detecting electrons transmitted through the sample, the detection surface being divided into a plurality of detector segments.2. The electron microscope as set forth in claim 1 , wherein said aperture has a first aperture hole permitting passage of said central portion therethrough and an annular claim 1 , second aperture hole permitting passage of said outer peripheral portion therethrough.3. The electron microscope as set forth in claim 1 ,wherein said aperture has a first aperture portion and a second ...

CHARGED PARTICLE BEAM APPARATUS

A charged particle beam apparatus with improved depth of focus and maintained/improved resolution has a charged particle source, an off-axis illumination aperture, a lens, a computer, and a memory unit. The apparatus acquires an image by detecting a signal generated by irradiating a sample with a charged particle beam caused from the charged particle source via the off-axis illumination aperture. The computer has a beam-computing-process unit to estimate a beam profile of the charged particle beam and an image-sharpening-process unit to sharpen the image using the estimated beam profile. 1. A charged particle beam apparatus comprising:a charged particle source;an off-axis illumination aperture;a lens;a computer; anda memory unit,wherein a signal, generated by irradiating a sample with a charged particle beam caused from the charged particle source via the off-axis illumination aperture and the lens, is detected, so as to acquire an image, andwherein the computer has: a beam-computing-process unit that performs a beam computation process to estimate a beam profile of the charged particle beam; and a sharpening process unit that performs a sharpening process to sharpen the image using the estimated beam profile.2. The charged particle beam apparatus according to claim 1 ,wherein the beam computation process is processing to estimate the beam profile by computation with an illumination condition determined with an optical condition including any of an aperture shape of the off-axis illumination aperture, an optical system magnification of the charged particle beam apparatus, accelerating voltage of the charged particle beam, and power of the lens, as an input value,wherein the sharpening process is deconvolution processing of the image using the estimated beam profile, andwherein the memory unit holds the estimated beam profile.3. The charged particle beam apparatus according to claim 1 , wherein the sharpening process is processing to convert the estimated beam ...

HYBRID ELECTRON MICROSCOPE

A hybrid electron microscope includes: an electron source to emit an electron beam; a parabolic mirror including: a reflective surface; and an aperture to communicate the electron beam through the parabolic mirror; and a sample holder interposed between the electron source and the parabolic mirror such that the reflective surface of the parabolic mirror faces the electron source and the sample holder. A process for acquiring hybrid electron microscopy data includes: disposing a parabolic mirror in a chamber, the parabolic mirror including: a reflective surface; and an aperture to communicate an electron beam through the parabolic mirror; disposing a sample on a sample holder; interposing a sample holder between an electron source and the parabolic mirror such that the reflective surface of the parabolic mirror faces the electron source and the sample holder; producing the electron beam from the electron source; subjecting the sample to the electron beam; communicating the electron beam through the sample and the aperture of the parabolic mirror; and collecting imaging data of the sample in response to the subjecting the sample to the electron beam to acquire the hybrid electron microscopy data. 1. A hybrid electron microscope comprising:an electron source to emit an electron beam; a reflective surface; and', 'an aperture to communicate the electron beam through the parabolic mirror; and, 'a parabolic mirror comprisinga sample holder interposed between the electron source and the parabolic mirror such that the reflective surface of the parabolic mirror faces the electron source and the sample holder.2. The hybrid electron microscope of claim 1 , further comprising an armature comprising an optical path to communicate a probe light to the reflective surface and to communicate a collected light from the reflective surface claim 1 ,3. The hybrid electron microscope of claim 2 , the armature further comprising:a first end disposed proximate to the sample holder;a second ...

SYSTEM FOR IN SITU REACTIVATION OF FLUORESCENCE MARKER

Vapor is provided locally at a sample surface to allow fluorescence of the fluorescent markers in a vacuum chamber. For example, a nanocapillary can dispense a liquid near a region of interest, the liquid evaporating to increase the vapor pressure near the fluorescent markers. The increase in vapor pressure at the fluorescent marker is preferably sufficiently great to prevent deactivation or to reactivate the fluorescent marker, while the overall pressure in the vacuum chamber is preferably sufficiently low to permit charged particle beam operation with little or no additional evacuation pumping. 120-. (canceled)21. A system for analyzing a specimen , comprising:a vacuum chamber;an electron beam column for scanning a focused electron beam over a surface of a sample in the vacuum chamber;an electron detector for detecting secondary electrons emitted from the sample in response to an impact of the electron beam to form an image of the sample;an optical system for illuminating the sample within the vacuum chamber with a wavelength of light that causes fluorescence of fluorescent markers in the sample and for detecting fluorescence from the fluorescent markers; anda source of a vapor for locally applying vapor to the surface of the sample at pressures sufficient to increase an activity of the fluorescent markers while maintaining a lower background pressure in the vacuum chamber.22. The system of in which the source of the vapor is a nanocapillary that dispenses a liquid that evaporates.23. The system of in which the source of the vapor is a gas injection system.24. The system of further comprising a focused ion beam column for processing the sample.25. The system of further comprising a laser for processing the sample.26. The system of further comprising a microtome for processing the sample.27. The system of further comprising a heater capable of heating the sample to hotter than 60 C.28. The system of further comprising a cooler capable of cooling the sample to ...

SYSTEM AND METHOD FOR BARE WAFER INSPECTION

A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates. 1. A defect review tool comprising: acquire, via an optical imaging tool, coordinates of defects on a bare wafer;', 'set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects on the bare wafer;', 'determine a position on the hare wafer of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scan of the bare wafer;', 'adjust the coordinates of the defects based on the determined positions of the subset of the defects; and', 'set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates., 'a controller in communication with an electron-beam inspection tool, the controller having circuitry to2. The defect review tool of claim 1 , wherein the first size is larger than the second size.3. The defect review tool of claim 1 , wherein the bare wafer is an un-patterned wafer.4. The defect review tool of claim 1 , wherein the controller having circuitry to adjust the coordinates of the defects based on the determined positions of the subset of the defects includes the controller having circuitry to:determine a transformation relationship for the coordinates of he ...

SYSTEM AND METHOD FOR BARE WAFER INSPECTION

A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

METHOD FOR COINCIDENT ALIGNMENT OF A LASER BEAM AND A CHARGED PARTICLE BEAM

A method and apparatus for aligning a laser beam coincident with a charged particle beam. The invention described provides a method for aligning the laser beam through the center of an objective lens and ultimately targeting the eucentric point of a multi-beam system. The apparatus takes advantage of components of the laser beam alignment system being positioned within and outside of the vacuum chamber of the charged particle system. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. (canceled)22. A multi-beam system , comprising:a vacuum chamber;a workpiece support for supporting a workpiece within the vacuum chamber;a charged particle beam system for generating a beam of charged particles, said beam directed toward the workpiece;a laser beam system for generating a laser beam for processing the workpiece in the vacuum chamber;a focused ion beam system for generating a focused ion beam;an electron beam system for monitoring the material removal process;an objective lens;a laser beam alignment system that allows for the laser beam to be made through the center of the objective lens to target a eucentric point of the workpiece.23. The multi-beam system of in which the laser beam is operated at a fluence greater than an ablation threshold of the workpiece.24. The multi-beam system of in which the laser beam is a short claim 23 , nanosecond to femtosecond claim 23 , pulsed laser beam.25. The multi-beam system of in which the laser beam is operated at a fluence that reacts with the workpiece without ablation.26. The multi-beam system of in which the laser beam is a thermally induced chemical desorption process.27. The multi-beam system of in which the laser beam involves laser photochemistry.28. The multi-beam system of having at least one quad cell ...

CHARGED PARTICLE BEAM DEVICE

A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition. 1. A charged particle beam device comprising:an input and output device that receives, as inputs, a charged particle beam condition related to a charged particle beam applied in order to estimate a circuit state of a sample, a light condition related to light applied in order to estimate the circuit state of the sample, and electronic device circuit information for defining a circuit of the sample;a charged particle beam control system that controls the charged particle beam applied to the sample based on the charged particle beam condition;a light control system that controls the light applied to the sample based on the light condition;a detector that detects secondary electrons emitted from the sample by the application of the charged particle beam and the light, and outputs a detection signal based on the secondary ...

CHARGED PARTICLE BEAM DEVICE

A charged particle beam device according to the present invention changes a signal amount of emitted charged particles by irradiating the sample with light due to irradiation under a plurality of light irradiation conditions, and determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount. 1. A charged particle beam device that irradiates a sample with a charged particle beam , the device comprising:a charged particle source that irradiates the sample with primary charged particles;a light source that emits light applied to the sample;a detector that detects secondary charged particles generated from the sample by irradiating the sample with the primary charged particles;a calculation unit that analyzes the sample by using the secondary charged particles detected by the detector;a light irradiation control system that is capable of setting at least one or more of a condition in which the light source applies the light, a first light irradiation condition, and a second light irradiation condition;a detection unit that detects the secondary charged particles emitted from the sample by the charged particle beam; andan image processing unit that forms a secondary charged particle image based on a detection signal of the secondary charged particles,whereinthe light source applies the light under the first light irradiation condition and the second light irradiation condition,the light source detects a change in a signal amount of the secondary charged particles detected by the detector between the first light irradiation condition and the second light irradiation condition by irradiating the sample with the light, andthe calculation unit determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount.2. The charged particle beam device according to claim 1 , whereinthe calculation unit determines a feature of the sample from the secondary charged particle ...

HAND-HELD DEVICE AND METHOD OF PLASMA TREATMENT OF A WORKPIECE WITH THE HAND-HELD DEVICE

A hand-held device and a method for plasma treatment of workpieces. The hand-held device comprises a housing for receiving a plasma source supplied with a gas stream from a gas supply unit. Further, an electrode unit is arranged in the plasma source and connected via an electrical line with a voltage source so that a plasma stream can be produced. The plasma stream can be directed through a nozzle of the housing onto a workpiece. The hand-held device comprises a sensor system for the collection of operating parameters which includes at least one operator sensor device for collecting a position of an operator relative to the plasma source and at least one pressure sensor for the collection of a pressure in the gas supply unit. Means of the hand-held device is communicatively connected with the sensor system for detecting the collected operating parameter via control data lines. 1. A hand-held device for the plasma treatment of workpieces , comprising:a housing for containing a plasma source;a gas supply unit for supplying a gas stream to the plasma source;a voltage source, being connected via at least one electrical lead with an electrode unit of the plasma source for generating a plasma stream;an outlet nozzle of the housing from which the plasma stream can be directed to a workpiece; at least one operator sensor device including a left hand sensor and a right hand sensor to levy a position of a right hand and a left hand of an operator on the housing, and thereby a position of the operator is detectable with respect to the plasma source; and', 'at least one pressure sensor for imposing a pressure in the gas supply unit; and, 'a sensor system for the collection of operating parameters, the sensor system comprisinga means which is communicatively coupled to the sensor system for synchronized detection of the collected operating parameters and to at least to the voltage source for its control via control data lines.2. The hand-held device recited in claim 1 , wherein ...

COAXIAL FIBER OPTICAL PYROMETER WITH LASER SAMPLE HEATER

An optical pyrometer having a coaxial light guide delivers laser radiation through optics to heat a localized area on a sample, and simultaneously collects optical radiation from the sample to perform temperature measurement of the heated area. Inner and outer light guides can comprise the core and inner cladding, respectively, of a double-clad fiber (DCF), or can be formed using a combination of optical fibers in one or more coaxial bundles. Coaxial construction and shared optics facilitate alignment of the centers of the heated and observed areas on the sample. The heated area can be on the order of micrometers when using a single-mode optical fiber core as the inner light guide. The system can be configured to heat small samples within a vacuum system of charged-particle beam microscopes such as electron microscopes. A method for using the invention in a microscope is also provided. 1. A pyrometer for use in a charged-particle beam microscope , the pyrometer comprising:a bidirectional light guide having a proximal end and a distal end, the bidirectional light guide further comprising an inner light guide and an outer light guide, the outer light guide surrounding the inner light guide and coaxial therewith;a directional coupler having a laser port, an analyzer port, and a distal port, the distal port optically coupled to the proximal end of the bidirectional light guide, the directional coupler configured to direct a backward-propagating light emitted from a sample and entering the distal port to exit at the analyzer port, and to direct a forward-propagating light entering the laser port to exit at the distal port;a laser optically coupled to the laser port of the directional coupler to provide forward-propagating laser light;focusing optics optically coupled to the distal end of the light guide and configured to focus the forward-propagating laser light onto the sample;collection optics optically coupled to the distal end of the light guide and configured to ...

APPARATUS FOR OBTAINING OPTICAL MEASUREMENTS IN A CHARGED PARTICLE APPARATUS

A charged particle inspection system may include a shielding plate having an aperture or more than one aperture, for example, to permit additional inspection by an additional instrument requiring a line of sight to the area of interest. A field shaping element, such as a window element or a raised rim, is placed at the aperture to prevent or reduce a component of an electric field. 1. An article comprising:a substantially planar plate comprising an electrically conductive material and structure defining a through aperture; anda field shaping element positioned at the through aperture, the field shaping element being configured to counteract effects of the through aperture on an electric field near the substantially planar plate, the field shaping element being electrically conductive and transmissive to light.2. An article as claimed in wherein the field shaping element comprises a window element positioned at the through aperture.3. An article as claimed in wherein the window element comprises an electrically conductive material transmissive to visible light having a wavelength in the range of about 300 nm to about 1100 nm.4. An article as claimed in wherein the window element comprises a transparent metal oxide claim 2 , and wherein the window element being transmissive to light includes the window element being optically transparent.5. An article as claimed in wherein the window element comprises indium tin oxide.6. An article as claimed in wherein the window element comprises graphene.7. An article as claimed in wherein the window element comprises carbon nanotubes.8. An article as claimed in wherein the window element comprises a doped transparent semiconductor.9. An article as claimed in wherein the window element comprises a conductive polymer.10. An article as claimed in wherein the window element comprises a body comprising a transparent material and coating of a conductive material.11. An article as claimed in wherein the coating of a conductive material ...

OPTICAL SYSTEM WITH COMPENSATION LENS

An optical system used in a charged particle beam inspection system. The optical system includes one or more optical lenses, and a compensation lens configured to compensate a drift of a focal length of a combination of the one or more optical lenses from a first medium to a second medium. 115-. (canceled)16. A non-transitory computer readable medium that stores a set of instructions that is executable by at least one processor of a system to cause the system to perform a method for operating an optical system used in a charged particle beam inspection system , the optical system including one or more optical lenses , the method comprising:providing a compensation lens in the optical system, the compensation lens being configured to compensate a drift of a focal length of a combination of the one or more lenses from a first medium to a second medium;assembling and calibrating the optical system in the first medium;removing the compensation lens; andplacing the one or more optical lenses in the second medium.17. The non-transitory computer readable medium of claim 16 , wherein the optical system is a position detection system claim 16 , and wherein the set of instructions that is executable by the at least one processor of the system to cause the system to further perform:projecting, by a projection module including a projection lens, a first light beam to a sample;receiving, by a receiving module including a receiving lens, a second light beam reflected from the sample; anddetecting, by a detection module, a position of the sample based on the second light beam.18. The non-transitory computer readable medium of claim 17 , wherein the one or more optical lenses include the projection lens included in the projection module and the receiving lens included in the receiving module.19. The non-transitory computer readable medium of claim 17 , wherein the detection module is disposed in the first medium claim 17 , and the projection module and the receiving module are ...

Systems and methods for using multimodal imaging to determine structure and atomic composition of specimens

An imaging system that selectively alternates between a first, non-destructive imaging mode and a second, destructive imaging mode to analyze a specimen so as to determine an atomic structure and composition of the specimen is provided. The field ionization mode can be used to acquire first images of ionized atoms of an imaging gas present in a chamber having the specimen disposed therein, and the field evaporation mode can be used to acquire second images of ionized specimen atoms evaporated from a surface of the specimen with the imaging gas remaining in the chamber. The first and second image data can be analyzed in real time, during the specimen analysis, and results can be used to dynamically adjust operating parameters of the imaging system.

INSPECTION OR OBSERVATION APPARATUS AND SAMPLE INSPECTION OR OBSERVATION METHOD

A sample observation method uses a charged particle beam apparatus comprising a charged particle optical column irradiating a charged particle beam, a vacuum chamber, and a sample chamber being capable of storing a sample. The method includes maintaining a pressure of the sample chamber higher than that of the vacuum chamber by a thin film which permits the charged particle beam to be transmitted, determining a relation between a height of a lower surface of the thin film and a height of a lower end of a lens barrel of an optical microscope, measuring a distance between the sample and the lens barrel, and setting a distance between the sample and thin film based on the relation and the distance. 1. A sample observation method by using a charged particle beam apparatus comprising a charged particle optical column irradiating a charged particle beam , a vacuum chamber , and a sample chamber being capable of storing a sample , the method comprising:maintaining a pressure of the sample chamber higher than that of the vacuum chamber by a thin film which permits the charged particle beam to be transmitted;determining a relation between a height of a lower surface of the thin film and a height of a lower end of a lens barrel of an optical microscope;measuring a distance between the sample and the lens barrel; andsetting a distance between the sample and thin film based on the relation and the distance.2. The sample observation method according to claim 1 , further comprising moving a sample mount section mounting the sample between a first position where the charged particle beam is irradiated to the sample and a second position where the sample is observed by the optical microscope.3. The sample observation method according to claim 1 ,wherein the charged particle beam apparatus comprises a sample mount section mounting the sample, andwherein the sample mounted on the sample mount section is observed by both of the charged particle beam apparatus and the optical ...

Method of Detecting Electrons, an Electron-Detector and an Inspection System

An electron-detector comprises a scintillator plate electron optics for directing a plurality of electron beams onto the scintillator plate so that the electron beams are incident onto the scintillator plate at locations of incidence disposed at a distance from each other, a light detector comprising a plurality of light receiving areas disposed at a distance from each other, and light optics for generating a first light-optical image of at least a portion of the scintillator plate at a region where the light receiving areas of the light detector are disposed so that, by the imaging, each of the locations of incidence is associated with a light receiving area; and wherein the electron optics comprise an electron beam deflector for displacing the locations of incidence of the electron beams on the scintillator plate in a direction orthogonal to a normal of a surface of the scintillator plate. 1. A method of detecting a plurality of electron beams , the method comprising:directing a plurality of electron beams onto a scintillator plate using electron optics so that the electron beams are incident onto the scintillator plate at a plurality of locations of incidence disposed at a distance from each other;imaging the locations of incidence onto a plurality of light receiving areas of a light detector using light optics so that, by the imaging, each of the locations of incidence is associated with one of the light receiving areas;detecting light incident onto the light receiving areas of the light detector; anddisplacing the locations of incidence, where the electron beams are incident onto the scintillator plate, in a direction orthogonal to a normal of a surface of the scintillator plate.2. The method according to claim 1 , wherein the displacing of the locations of incidence claim 1 , where the electron beams are incident onto the scintillator plate claim 1 , comprises moving the scintillator plate relative to components of the electron optics.3. The method according ...

LIGHT GUIDE ASSEMBLY FOR AN ELECTRON MICROSCOPE

An embodiment of electron microscope system is described that comprises an electron column pole piece and a light guide assembly operatively coupled together. The light guide assembly also includes one or more detectors, and a mirror with a pressure limiting aperture through which an electron beam from an electron source passes. The mirror is also configured to reflect light, as well as to collect back scattered electrons and secondary electrons. 1. An electron microscope system , comprising:an electron pole piece; anda light guide assembly operatively coupled to the electron column pole piece and comprising one or more detectors, and a mirror that includes a pressure limiting aperture through which an electron beam from an electron source passes, wherein the mirror is configured to reflect light and to collect back scattered electrons and secondary electrons.2. The electron microscope system of claim 1 , further comprising:a chamber that comprises a low vacuum environment, wherein the electron column pole piece and the light guide assembly are positioned within the chamber.3. The electron microscope system of claim 2 , wherein:the electron beam passes to a sample positioned in the chamber, wherein the sample produces the back scattered and the secondary electrons in response to the electron beam.4. The electron microscope system of claim 1 , wherein:the light guide assembly is operatively coupled to a final lens of the electron column pole piece.5. The electron microscope system of claim 1 , wherein:the light guide assembly and the electron column beam pole piece are configured to operatively couple with a pressure tight seal.6. The electron microscope system of claim 5 , wherein:the mirror provides the pressure tight seal to the electron column beam pole piece.7. The electron microscope system of claim 5 , wherein:the light guide assembly and an intermediate element are configured to operatively couple with a pressure tight seal, and the intermediate element and ...

NANOFLUIDIC CELL AND LOADING PLATFORM

Parts of a pair, in use, are disposed in abutting relation to one another to define a cell for use with an electron microscope, the cell having, disposed on opposite surfaces thereof, a pair of windows, the windows being arranged in spaced relation to one another to define a viewable interior volume of the cell at a region of overlap. A housing is adapted to receive one of the pair of parts and further adapted to define a chamber containing the one of the parts which chamber, in use, is evacuated. An arrangement is adapted, when the one of the parts is received by the housing and is in receipt of a sample and the chamber is evacuated, to position together the one of the pair of parts and the other of the pair of parts. 1. Apparatus for use with an electron microscope and for receiving a liquid sample and/or in-liquid sample droplet , the apparatus comprising:a pair of parts which, in use, are disposed in abutting relation to one another to define a cell for use with said microscope, the cell having: disposed on opposite surfaces thereof, a pair of windows, the windows being arranged in spaced relation to one another to define a viewable interior volume of the cell at the region of overlap; and a cavity communicating with the viewable interior volume of the cell, the volume of the cavity, in combination with the viewable interior volume, being larger than the volume of the droplet.2. Apparatus according to claim 1 , wherein each part of the pair is defined claim 1 , at least in part claim 1 , by a respective body claim 1 , each body defining a respective one of the windows.3. Apparatus according to claim 2 , wherein one of the bodies defines a surface in which the window of such body is defined.4. Apparatus according to claim 3 , wherein the surface is one or more of the end of a boss and a surface having a high affinity for the liquid sample and/or the in-liquid sample droplet.5. Apparatus according to claim 1 , wherein the pair of parts further comprises a ...

CHARGED PARTICLE BEAM APPARATUS

An object of the present invention is to provide a charged particle beam apparatus that effectively removes electrical charges from an electrostatic chuck. 1. A charged particle beam apparatus comprising:a charged particle source;an electrostatic chuck mechanism that holds the sample to be irradiated by the charged particle beam; anda sample chamber that maintains a space containing the electrostatic chuck mechanism in a vacuum state,wherein the charged particle beam apparatus further includes an ultraviolet light source to irradiate ultraviolet rays within the sample chamber, and an irradiation target member irradiated by the ultraviolet light and the irradiation target member is positioned perpendicular to the adsorption surface of the electrostatic chuck.2. The charged particle beam apparatus according to claim 1 , comprising:a sample stage that holds electrostatic chuck; anda control device that controls the sample stage and the ultraviolet light source,wherein the control device controls the ultraviolet light source so as to irradiate ultraviolet rays when the electrostatic chuck is mounted at a position below the irradiation target section.3. The charged particle beam apparatus according to claim 1 ,wherein the irradiation target member includes an irradiation target section irradiated by the ultraviolet rays, and a plurality of axially symmetrical apertures centered on the irradiation target section.4. The charged particle beam apparatus according to claim 3 ,wherein the irradiation target section includes an irradiation target surface larger than the irradiation range of the ultraviolet rays.5. The charged particle beam apparatus according to claim 1 , comprising:a control device that measures the electrical charge accumulated on the electrostatic chuck,wherein the control device implements electrical charge removal utilizing the ultraviolet light source when the measured result exceeds a specified value. The present invention relates to a charged particle ...

CHARGED PARTICLE BEAM DEVICE

An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. ).

System and method of preparing integrated circuits for backside probing using charged particle beams

Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC. 1. A method comprising:removing bulk material from a backside of a sample, a front side of the sample including an active layer, wherein removal of the bulk material leaves a thin layer of the bulk material covering the active layer on the backside;milling, by an ion beam, the thin layer to expose a probe area of the active layer;monitoring the milling of the thin layer based on a signature of the probe location indicating that the active layer has been reached; andterminating, in response to the monitoring, the milling.2. The method of claim 13 , wherein monitoring the milling of the thin layer based on a signature of the probe location indicating that the active layer has been reached comprises:detecting an image contrast while milling the thin layer, the image contrast indicating the active layer has been reached.3. The method of claim 2 , wherein detecting an image contrast while milling the remaining material from the backside of the sample comprises:detecting a change in ...

DEVICE AND METHOD FOR GENERATING CHARGED PARTICLE BEAM PULSES

Disclosed is a device for, in combination with a stop having an aperture, generating charged particle beam pulses, an apparatus for inspecting a surface of a sample, and a method for inspecting a surface of a sample. The device includes a deflection unit which is arranged for positioning in or along a trajectory of a charged particle beam. The deflection unit is arranged for generating an electric field for deflecting said charged particle beam over the stop and across the aperture. The device also includes an electrical driving circuit for providing a periodic signal. The electrical driving circuit is connected to the manipulation unit via a photoconductive switch, wherein the photoconductive switch is arranged for: substantially insulating the deflection unit from the electrical driving circuit, and for conductively connecting the deflection unit to the electrical driving circuit only when said photoconductive switch is illuminated by a light beam. 1. A device for , in combination with a stop comprising an aperture or slit , generating charged particle beam pulses , wherein the device comprises a deflection unit which is arranged for positioning in or along a trajectory of a charged particle beam , and wherein the deflection unit is arranged for generating an electric field for deflecting said charged particle beam over said stop and across the aperture or slit , wherein the device comprises an electrical driving circuit for providing a voltage to the deflection unit ,wherein the electrical driving circuit is electrically connected to the deflection unit via a photoconductive switch, wherein the photoconductive switch is arranged for:conductively connecting the deflection unit to the electrical driving circuit when said photoconductive switch is illuminated by a light beam of an intensity larger than a predetermined intensity value, for transmitting the voltage of the electrical driving circuit to the deflection unit, andsubstantially insulating the deflection ...

INVESTIGATION OF HIGH-TEMPERATURE SPECIMENS IN A CHARGED PARTICLE MICROSCOPE

A method of examining a specimen in a Charged Particle Microscope, comprising the following steps: 2. A method according to claim 1 , wherein said detector comprises a color filter between said scintillator module and said photon sensor claim 1 , which filter preferentially passes photons in said first category but selectively attenuates photons in said second category.3. A method according to claim 2 , wherein said filter comprises a series stack of component sub-filters.4. A method according to claim 1 , wherein said photon sensor is configured to produce a relatively strong detection signal in response to photons in said first category but produce a relatively weak detection signal in response to photons in said second category.5. A method according to claim 4 , wherein:said photon sensor is a photomultiplier, which comprises a photocathode; andsaid photocathode has a sensitivity curve with a relatively high value for photons in said first category and a relatively low value for photons in said second category.6. A method according to claim 1 , wherein a light guide is disposed between said scintillator module and said photon sensor.8. The scanning-type Charged Particle Microscope of claim 7 , wherein the detector further comprises a color filter between the scintillator module and the photon sensor claim 7 , the filter preferentially passing photons in the first category but selectively attenuating photons in the second category.9. The scanning-type Charged Particle Microscope of claim 14 , wherein the filter comprises a series stack of component sub-filters.10. The scanning-type Charged Particle Microscope of claim 7 , wherein a light guide is disposed between the scintillator module and the photon sensor.11. The scanning-type Charged Particle Microscope of claim 7 , wherein the photon sensor is configured to produce a relatively strong detection signal in response to photons in the first category but produce a relatively weak detection signal in response to ...

INSPECTION METHOD FOR WAFER OR DUT

A method includes applying a voltage to a wafer or a device under test (DUT). The wafer or the DUT is illuminated with an electron beam after applying the voltage to the wafer or the DUT. Cathodoluminescent light emitted from the wafer or the DUT in response to the electron beam is detected. One or more characteristics of the wafer or the DUT are determined based on the detected cathodoluminescent light. 1. A method , comprising:applying a voltage to a wafer or a device under test (DUT);illuminating the wafer or the DUT with an electron beam after applying the voltage to the wafer or the DUT;detecting cathodoluminescent light emitted from the wafer or the DUT in response to the electron beam; anddetermining one or more characteristics of the wafer or the DUT based on the detected cathodoluminescent light.2. The method of claim 1 , further comprising:collecting, using a total reflective achromatic lens system, the cathodoluminescent light; andwherein detecting the cathodoluminescent light comprises detecting the collected cathodoluminescent light.3. The method of claim 2 , wherein the total reflective achromatic lens system comprises a first reflective lens having an aperture therein and a second reflective lens having an aperture therein claim 2 , and illuminating the wafer or the DUT is performed such that the electron beam passes through the aperture of the first reflective lens and the aperture of the second reflective lens.4. The method of claim 3 , further comprising:illuminating the wafer or the DUT with a laser light.5. The method of claim 4 , wherein illuminating the wafer or the DUT with the laser light is performed such that the laser light passes through the aperture of the first reflective lens and the aperture of the second reflective lens.6. The method of claim 4 , wherein illuminating the wafer or the DUT with the laser light is performed such that the laser light passes through an optical window on a sidewall of a chamber where the wafer or the DUT ...

INTEGRATED OPTICAL AND CHARGED PARTICLE INSPECTION APPARATUS

The invention relates to an apparatus and a method for inspecting a sample. The apparatus includes a sample holder for holding the sample, at least the sample holder comprises a cooling system which is configured for cooling at least the sample, preferably to cryogenic temperatures; a charged particle exposure system includes an assembly for projecting a focused beam of primary charged particles onto the sample held by the sample holder; and a light optical microscope. The sample holder includes a sheet of a scintillator material, and the sample holder is configured to position the sample in between the charged particle optical column and the sheet of the scintillator material. The light optical microscope includes a detection system configured for acquiring an optical image of at least a part of the sheet of the scintillator material. 129-. (canceled)30. An apparatus for inspecting a sample , wherein the apparatus comprises:a sample holder for holding the sample, wherein at least the sample holder comprises a cooling system which is configured for cooling at least the sample;a charged particle exposure system comprising an assembly for projecting a focused beam of primary charged particles onto the sample held by the sample holder; anda light optical microscope;wherein the sample holder comprises a sheet of a scintillator material, wherein the sample holder is configured for positioning the sample in between the charged particle optical column and the sheet of the scintillator material, andwherein the light optical microscope comprises a first detection system configured for acquiring an image of at least a part of the sheet of the scintillator material.31. The apparatus according to claim 30 , wherein the cooling system is configured for cooling the sheet of the scintillator material.32. The apparatus according to claim 31 , wherein the sheet of the scintillator material is an integral part of the cooling system.33. The apparatus according to claim 30 , wherein ...

Charged Particle Beam Device and Method for Adjusting Charged Particle Beam Device

The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system. The charged particle beam device is provided with: a light source that emits light toward the object; and a control device that obtains, on the basis of detection charged particles generated according to irradiation of light emitted from the light source, a plurality of deflection signals which maintain a certain deflection state, and that selects or calculates, from the plurality of deflection signals or from relationship information produced from the plurality of deflection signals, a deflection signal that satisfies a predetermined condition. 1. A charged particle beam device comprising:a first charged particle column that surrounds a passing trajectory of charged particles emitted from a charged particle source;a deflector that deflects the charged particles that have passed through inside the first charged particle column toward an object;a second charged particle column through which irradiation of the charged particles toward the object obtains charged particles that pass;a light source in which a light is irradiated toward the object; anda control device that obtains a plurality of deflection signals to maintain a certain deflection state based on a detection of charged particles generated corresponding to the irradiation of the light emitted from the light source, and selects or calculates a deflection signal where information obtained by the irradiation of the charged particles from the ...

ELECTRON MICROSCOPE, AND METHOD FOR OBSERVING MEASUREMENT SAMPLE

An electron microscope includes: a laser light source configured to generate a CW laser; an irradiation lens system configured to irradiate a measurement sample with the CW laser; an energy analyzer configured to disperse, depending on energy, photoelectrons emitted from the measurement sample by irradiation with the CW laser; an energy slit configured to allow a photoelectron with a specified energy to pass, among the photoelectrons; an electron beam detector configured to detect the photoelectron passed through the energy slit; a first electron lens system configured to focus the photoelectrons emitted from the measurement sample onto the energy analyzer; and a second electron lens system configured to project the photoelectron passed through the energy slit onto the electron beam detector. 1. An electron microscope , comprising:a laser light source configured to generate a CW laser;an irradiation lens system configured to irradiate a measurement sample with the CW laser;an energy analyzer configured to disperse, depending on energy, photoelectrons emitted from the measurement sample by irradiation with the CW laser;an energy slit configured to allow a photoelectron with a specified energy to pass, among the photoelectrons;an electron beam detector configured to detect the photoelectron passed through the energy slit;a first electron lens system configured to focus the photoelectrons emitted from the measurement sample onto the energy analyzer; anda second electron lens system configured to project the photoelectron passed through the energy slit onto the electron beam detector.2. The electron microscope according to claim 1 , whereina difference between an energy of the CW laser and a work function of the measurement sample is in a range of 0.0 eV to 0.5 eV.3. The electron microscope according to claim 1 , further comprisingan energy adjusting mechanism configured to apply a specified voltage to the measurement sample to adjust the energy of the photoelectrons.4. ...

APPARATUS WITH OPTICAL CAVITY FOR DETERMINING PROCESS RATE

A parameter measurement system is provided. A cavity ring down device is provided comprising a first cavity ring down mirror and a second cavity ring down mirror spaced apart from the first cavity ring down mirror. At least one laser light source is optically coupled to the first cavity ring down mirror. A light detector is optically coupled to either the first cavity ring down mirror or the second cavity ring down mirror. A controller is configured to use a sample received from the processing chamber and the light from the at least one laser light source and reflected between the first and second cavity ring down mirrors to measure one or more process parameters and adjust the process based on the one or more process parameters. 1. A parameter measurement system in fluid connection with a processing chamber for controlling a process for processing a substrate , comprising: a first cavity ring down mirror on a first side of the cavity ring down device; and', 'a second cavity ring down mirror on a second side of the cavity ring down device spaced apart from the first cavity ring down mirror;, 'a cavity ring down device, comprisingat least one laser light source optically coupled to the first cavity ring down mirror;a light detector optically coupled to either the first cavity ring down mirror or the second cavity ring down mirror; anda controller configured to use a sample received from the processing chamber and the light from the at least one laser light source and reflected between the first and second cavity ring down mirrors to measure one or more process parameters and adjust the process based on the one or more process parameters.2. The parameter measurement system claim 1 , as recited in claim 1 , wherein the sample includes at least one of a gas byproduct from the process and plasma that is present when the process is carried out.3. The parameter measurement system claim 1 , as recited in claim 1 , further comprising one or more heaters for heating the first ...

CHARGED PARTICLE MICROSCOPE WITH VIBRATION DETECTION / CORRECTION

A method of using a Charged Particle Microscope comprising: 2. A method according to claim 1 , wherein said signal is used as input to a control procedure to compensate for a positional error of said specimen holder relative to at least one of said illuminator and said detector.3. A method according to claim 2 , wherein:said control procedure comprises a control loop; andsaid compensation comprises on-the-fly adjustment of a relative position of said beam and said specimen holder.4. A method according to claim 3 , wherein the controller is invoked to adjust a position setpoint supplied to said stage in response to said signal.5. A method according to claim 3 , wherein:the illuminator is provided with a deflector mechanism that can be used to adjust a deflection of the beam; andthe controller is invoked to adjust a deflection setpoint supplied to said deflector mechanism in response to said signal.6. A method according to claim 2 , wherein:the microscope is provided with an imaging system, for directing a flux of charged particles transmitted through the specimen onto said detector;said imaging system is provided with a steering module that can be used to adjust a path of said flux; andthe controller is invoked to adjust a steering setpoint supplied to said steering module in response to said signal.7. A method according to claim 2 , wherein:the microscope is provided with scanning means, for producing relative scanning motion of the beam and specimen;the controller is invoked to construct a table of detector output as a function of scan coordinate position on the specimen; andsaid compensation comprises retrospective correction of said scan coordinate position on a point-by-point basis.8. A method according to claim 1 , wherein:a first interferential optical position sensor is used to determine a position of said specimen holder relative to a microscope frame;a second interferential optical position sensor is used to determine a position of part of said illuminator ...

Image Acquisition Method and Transmission Electron Microscope

An image acquisition method and system for use in transmission electron microscopy and capable of providing information about a wide range of frequency range. The method is initiated with setting at least one of the spherical aberration coefficient and chromatic aberration coefficient of the imaging system of the microscope to suppress attenuation of a contrast transfer function due to an envelope function. Then, an image is obtained by the imaging system placed in defocus conditions. 1. An image acquisition method for use in a transmission electron microscope , said image acquisition method comprising the steps of:setting at least one of a spherical aberration coefficient and a chromatic aberration coefficient of an imaging system of the transmission electron microscope to suppress attenuation of a contrast transfer function due to an envelope function; andobtaining an image by the imaging system placed under defocus conditions.2. The image acquisition method as set forth in claim 1 , wherein the spherical aberration coefficient of said imaging system is set by the use of a spherical aberration corrector.3. The image acquisition method as set forth in claim 1 , wherein the chromatic aberration coefficient of said imaging system is set by the use of a chromatic aberration corrector.4. The image acquisition method as set forth in claim 1 , wherein the spherical aberration coefficient of said imaging system is set to 10 mm or more claim 1 , and wherein the chromatic aberration coefficient of the imaging system is set to 2 mm or less.5. A transmission electron microscope comprising:an electron beam source for producing an electron beam;an illumination system for causing the electron beam released from the electron beam source to be directed at a sample;an imaging system for focusing the electron beam transmitted through the sample;a spherical aberration corrector for varying a spherical aberration coefficient of the imaging system; anda controller for controlling the ...

Charged Particle System and Measuring Method

There is provided a charged particle system capable of measuring deflection fields in a sample without using a segmented detector. The charged particle system () has: illumination optics () for illuminating the sample with charged particles; an imaging deflector system () disposed behind an objective lens () and operative to deflect the charged particles; a detector () having a detection surface () and operative to detect the charged particles incident thereon, imaging optics () disposed behind the imaging deflector system () and operative to focus the charged particles as diffraction discs () onto the detection surface (); a storage unit () for storing intensity information detected by the detector (); and a controller () for controlling the imaging deflector system (). The controller () controls the imaging deflector system () to cause the charged particles passing through a given position of particle impingement on the sample to be deflected under successively different sets of deflection conditions and to bring the diffraction discs () into focus onto successively different regions of the detection surface (). The storage unit () stores the intensity information for each set of the deflection conditions. 1. A charged particle system comprising:a charged particle source for producing charged particles;illumination optics for illuminating a sample with the charged particles;an objective lens for focusing the charged particles transmitted through the sample;an imaging deflector system disposed behind the objective lens and operative to deflect the charged particles;a detector having a detection surface and operative to detect the charged particles incident thereon and to output intensity information corresponding to the number of the detected charged particles;imaging optics disposed behind the imaging deflector system and operative to focus the charged particles as diffraction discs onto the detection surface;a storage unit for storing the intensity information ...

ELECTRON MICROSCOPE AND IMAGING METHOD

An electron microscope for observation by illuminating an electron beam on a specimen, includes: an edge element disposed in a diffraction plane where a direct beam not diffracted by but transmitted through the specimen converges or a plane equivalent to the diffraction plane; and a control unit for controlling the electron beam or the edge element. The edge element includes a blocking portion for blocking the electron beam, and an aperture for allowing the passage of the electron beam. The aperture is defined by an edge of the blocking portion in a manner that the edge surrounds a convergence point of the direct beam in the diffraction plane. The control unit varies contrast of an observation image by shifting, relative to the edge, the convergence point of the direct beam along the edge while maintaining a predetermined distance between the convergence point of the direct beam and the edge. 1. An electron microscope for observation by illuminating an electron beam on a specimen , comprising:an edge element disposed in a diffraction plane where a direct beam not diffracted by but transmitted through the specimen converges or a plane equivalent to the diffraction plane; anda control unit for controlling the electron beam or the edge element,wherein the edge element includes a blocking portion for blocking the electron beam, and an aperture for allowing the passage of the electron beam,the aperture is defined by an edge of the blocking portion in a manner that the edge surrounds a convergence point of the direct beam in the diffraction plane, andthe control unit varies contrast of an observation image by shifting, relative to the edge, the convergence point of the direct beam along the edge while maintaining a predetermined distance between the convergence point of the direct beam and the edge.2. The electron microscope according to claim 1 ,wherein the control unit acquires an observation image of the specimen by performing arithmetic processing on plural images ...

Charged Particle Beam Apparatus

The present invention provides a dual-beam apparatus which employs the dark-field e-beam inspection method to inspect small particles on a surface of a sample such as wafer and mask with high throughput. The dual beam apparatus comprises two single-beam dark-field units placed in a same vacuum chamber and in two different orientations. The two single-beam dark-field units can perform the particle inspection separately or almost simultaneously by means of the alternately-scanning way. The invention also proposes a triple-beam apparatus for both inspecting and reviewing particles on a sample surface within the same vacuum chamber. The triple-beam apparatus comprises one foregoing dual-beam apparatus performing the particle inspection and one high-resolution SEM performing the particle review. 1. A method for inspecting a patterned surface of a sample , comprising: a primary electron beam (PE beam), which obliquely illuminates and scans said patterned surface and thereby generating backscattered electrons and secondary electrons therefrom;', 'a detector with a through hole for said PE beam passing through, which detects said backscattered electrons traveling towards an incidence side of said PE beam; and', 'an electrode close to said patterned surface, which attracts said secondary electrons from hitting said detector so that said detector provides a dark-field BSE image of said patterned surface;, 'providing two single-beam units and each of which comprisesorientating said PE beams of said two single-beam units in two different directions; andusing said two single-beam units to generate dark-field BSE images of said patterned surface.2. The method according to claim 1 , wherein said PE beams of said two single-beam units are substantially perpendicular to each other.3. A multi-beam apparatus for observing a patterned surface of a sample claim 1 , comprising:a sample stage supporting said sample, wherein said patterned surface is placed upwards and coincides with an ...

TIME-RESOLVED CHARGED PARTICLE MICROSCOPY

A method of investigating a specimen using charged particle microscopy, comprising the following steps: 1. A method of investigating a specimen using charged particle microscopy , comprising:providing, by a primary source, a pulsed beam of charged particles to the specimen;while providing the pulsed beam of charged particles, exciting, by a secondary source, the specimen coincidentally with the pulsed beam of charged particles;detecting, by a detector, charged particles that traverse the specimen after each said excitation; anddetermining, by the detector, a time-of-arrival of individual charged particles that traverse the specimen, wherein the detector includes an integrated array of pixels, each with an individual readout circuit.2. A method according to claim 1 , wherein the pulsed beam of charged particles includes a plurality of pulses claim 1 , and wherein the plurality of pulses are incident on the specimen while the specimen is being excited.3. A method according to claim 1 , wherein said primary source comprises an oscillatory electromagnetic beam deflector.4. A method according to claim 3 , wherein said deflector comprises a TMRF cavity beam chopper.5. A method according to claim 3 , wherein:said primary source comprises a series arrangement of an RF cavity beam chopper and an oscillatory electromagnetic beam deflector; andan operating frequency of said oscillatory electromagnetic beam deflector is matched to a frequency of said excitations.6. A method according to claim 1 , wherein said secondary source is a laser.7. A method according to claim 1 , wherein a phase of said pulsed beam of charged particles is adjusted between two successive excitations of said specimen.8. A method according to claim 1 , wherein claim 1 , for the primary source claim 1 , values of a pulse duration dand pulse repetition rate rare selected from the group consisting of:{'sub': p', 'p, 'd<1 ns and r>50 MHz;'}{'sub': p', 'p, 'd<100 ps and r>300 MHz; and'}{'sub': p', 'p, 'd≤1 ps ...

TRANSFER SYSTEM AND TRANSFER METHOD

A transfer system configured to transfer a focus ring includes a processing system and a position detection system. The processing system includes a processing apparatus including a chamber main body and a placing table having a substrate placing region and a focus ring placing region; and a transfer device configured to transfer the focus ring. The position detection system includes a light source; multiple optical elements configured to output light and receive reflected light; a driving unit configured to move each optical element to allow each optical element to scan a scanning range; and a controller configured to calculate, based on the reflected light in the scanning range, a positional relationship between the placing table and the focus ring for each optical element. The transfer device is configured to adjust a transfer position of the focus ring onto the focus ring placing region based on the calculated positional relationship. 1. A transfer system configured to transfer a focus ring into a processing apparatus , comprising:a transfer device and a position detection system,wherein the processing apparatus comprises:a chamber main body; anda placing table, disposed within a chamber provided by the chamber main body, having a substrate placing region and a focus ring placing region surrounding the substrate placing region, wherein the transfer device is configured to transfer the focus ring onto the focus ring placing region,wherein the position detection system comprises:a light source configured to generate measurement light;multiple optical elements each configured to output the measurement light generated from the light source as output light and configured to receive reflected light;a driving unit configured to move each of the multiple optical elements to allow each of the optical elements to scan a scanning range from the focus ring placed on the focus ring placing region to the substrate placing region; anda controller configured to calculate, based ...

Sample chamber device for electron microscope, and electron microscope comprising same

A vacuum sample chamber for a particle and optical device includes on one surface thereof, an aperture through which a particle beam to be focused along an optical axis of particles such as electrons, ions and neutral particles is incident; and on the opposite surface thereof, a detachable sample holder through which light penetrates, thereby enabling a sample to be observed and analyzed by means of the particle beam and light. A sample chamber is capable of reducing observation time by maintaining a vacuum therein even when a sample is put into or taken out from a sample chamber of an electron microscope or focused ion beam observation equipment, and capable of obtaining an optical image on the outside thereof without inserting a light source or an optical barrel into the sample chamber. A light-electron fusion microscope comprising the sample chamber.

WAFER AND DUT INSPECTION APPARATUS AND METHOD USING THEREOF

A wafer and DUT inspection apparatus and a wafer and DUT inspection method using thereof are provided. The apparatus includes a vacuum chamber, a stage, an electron gun, a lens system, an optical mirror and a detector. In the vacuum chamber, the stage is disposed near a first end, and the electron gun is disposed near a second end opposite to the first end. The lens system disposed between the stage and the electron gun is a total reflective achromatic lens system including a first lens and a second lens. The second lens having a second aperture is disposed between the electron gun and the first lens having a first aperture aligned with the second aperture. The optical mirror is disposed between the lens system and the electron gun. The detector is horizontally aligned with the optical mirror and configured to detect cathodoluminescence reflected from the optical mirror. 1. A wafer and a device under test (DUT) inspection apparatus , comprising:a vacuum chamber;a stage disposed in the vacuum chamber and near a first end of the vacuum chamber, wherein the stage is configured to hold a wafer or DUT;an electron gun disposed in the vacuum chamber and near a second end of the vacuum chamber opposite to the first end for providing an E-beam;a lens system disposed between the stage and the electron gun, wherein the lens system is a total reflective achromatic lens system comprising:a first lens having a first aperture; anda second lens having a second aperture aligned with the first aperture, the second lens is disposed between the electron gun and the first lens;an optical mirror disposed between the lens system and the electron gun, wherein the optical mirror has a slit aligned with the second aperture, thereby allowing the E-beam to pass through the slit, the first aperture and the second aperture; anda detector horizontally aligned with the optical mirror and configured to detect cathodoluminescence reflected from the optical mirror for forming an image.2. The ...

Electron Beam Device

In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage. In the electron beam device, the imaging optical system includes a sensor which obtains a mirror electron image and a stray light suppression part which is provided between the sensor and the stage and which suppresses reaching the sensor of the light emitted from the light irradiation unit. 1. An electron beam device , comprising:an irradiation optical system that irradiates a sample placed on a stage with an electron beam;a light irradiation unit that irradiates the sample with light containing ultraviolet rays;a sample voltage control unit that applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; andan imaging optical system that acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage,wherein the imaging optical system includes a sensor that obtains the mirror electron image and a stray light suppression part that is provided between the sensor and the stage and that suppresses reaching the sensor of the light emitted from the light irradiation unit.2. The electron beam device according to claim 1 , further comprising claim 1 ,an objective lens anda beam separator that deflects the ...

SYSTEM AND METHOD FOR SPATIALLY RESOLVED OPTICAL METROLOGY OF AN ION BEAM

Provided herein are systems and methods for spatially resolved optical metrology of an ion beam. In some embodiments, a system includes a chamber containing a plasma/ion source operable to deliver an ion beam to a wafer, and an optical collection module operable with the chamber, wherein the optical collection module includes an optical device for measuring a light signal from a volume of the ion beam. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the measured light signal, thus corresponding to the property of the sampled plasma volume. 1. A system comprising:a chamber containing a plasma source operable to deliver an ion beam to a wafer;an optical collection module operable with the chamber, the optical collection module comprising an optical device for measuring a light signal from a volume of the ion beam; anda detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the measured light signal.2. The system of claim 1 , further comprising a control module operable with the optical collection module and with the detection module claim 1 , the control module including a processing device operable to:receive the electric signal from the detection module; andprocess the electric signal to determine at least one of the following: an evenness of the ion beam across the wafer, a cross-section of the ion beam, and a profile of the ion beam.3. The system of claim 2 , wherein the processing device is operable to determine the profile of the ion beam by:performing a plurality of scans along a first axis parallel to a surface of the wafer, the plurality of scans performed at multiple, different distances normal to the surface of the wafer;generating a ...

Method and apparatus for alignment of optical and charged-particle beams in an electron microscope

Apparatus and methods for the alignment of a charged-particle beam with an optical beam within a charged-particle beam microscope, and to the focusing of the optical beam are disclosed. An embodiment includes a charged-particle beam microscope having one or more charged-particle beams, such as an electron beam, and one or more optical beams provided by an optical-beam accessory that is mounted in or on the charged-particle beam microscope. This accessory is integrated into a nanomanipulator system, allowing its focus location to be moved within the microscope. The apparatus includes a two-dimensional pixelated beam locator such as a CCD or CMOS imaging array sensor. The image formed by this sensor can then be used to manually, or automatically in an open or closed loop configuration, adjust the positioning of one or more charged-particle beams or optical beams to achieve coincidence of such beams or focus of one or more such beams.

SHAPED APERTURE SET FOR MULTI-BEAM ARRAY CONFIGURATIONS

An aperture array for a multi-beam array system and a method of selecting a subset of a beam from a multi-beam array system are provided. The aperture array comprises an array body arranged proximate to a beam source. The array body comprises a plurality of apertures, at least two of the apertures having different geometries. The array body is movable, via an actuator, relative to an optical axis of the beam source, such that a subset of a beam from the beam source is selected based on the geometry of the aperture that is intersected by the optical axis. 1. An aperture array for a multi-beam array system , comprising:an array body arranged proximate to a beam source, the array body comprising a plurality of apertures, wherein at least two of the apertures have different geometries;wherein the array body is movable, via an actuator, relative to an optical axis of the beam source, such that a subset of a beam from the beam source is selected based on the geometry of the aperture that is intersected by the optical axis.2. The aperture array of claim 1 , wherein at least one of the plurality of apertures is circular.3. The aperture array of claim 1 , wherein at least one of the plurality of apertures is rectangular.4. The aperture array of claim 1 , wherein at least one of the plurality of apertures is hexagonal.5. The aperture array of claim 1 , wherein two of the plurality of apertures have a same shape with different sizes.6. The aperture array of claim 1 , wherein the plurality of apertures are arranged one dimensionally in the array body.7. The aperture array of claim 6 , wherein the actuator comprises:a linear actuator configured to move the array body relative to the optical axis of the beam source in an X direction;wherein the X direction is perpendicular to the optical axis.8. The aperture array of claim 6 , wherein the actuator comprises:a rotary actuator configured to rotate the array body relative to the optical axis of the beam source about a rotational ...

MULTIPLE CHARGED PARTICLE BEAM APPARATUS

A multiple charged particle beam apparatus includes: a first aperture array substrate to form multiple beams; a first grating lens that constitutes a concave lens by using the first aperture array substrate as a grating; a second aperture array substrate that allows the multiple beams to pass through; and a first limiting aperture substrate arranged in a position of a convergent point of the multiple beams between the first aperture array substrate and the second aperture array substrate, wherein a first aperture array image having passed through the first shaping aperture array substrate is formed on the second aperture array substrate by a lens action including a magnetic field distribution generated between the first aperture array substrate and the second aperture array substrate and having opposite signs and same magnitude and an electric field distribution generated by the first grating lens. 1. A multiple charged particle beam apparatus comprising:an emission source configured to emit a charged particle beam;an illumination lens configured to illuminate the charged particle beam;a first aperture array substrate that has a plurality of first openings formed therein and receives irradiation of the charged particle beam illuminated in a region including the plurality of first openings as a whole to form multiple beams by making portions of the charged particle beam individually pass through a corresponding one of the plurality of first openings;a first grating lens that constitutes a concave lens by using the first aperture array substrate as a grating;a second aperture array substrate that has a plurality of second openings formed therein and allows at least a portion of a corresponding beam of the multiple beams to pass through each of the plurality of second openings;a first limiting aperture substrate arranged in a position of a convergent point of the multiple beams between the first aperture array substrate and the second aperture array substrate to limit ...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light 1. A substrate processing method , comprising:providing a substrate into a process chamber;introducing a reference light into the process chamber;generating a plasma light in the process chamber while performing an etching process on the substrate;receiving the reference light and the plasma light; anddetecting an etching end point by analyzing the plasma light and the reference light,wherein detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light.2. The substrate processing method of claim 1 , whereinanalyzing the plasma light comprises obtaining the change rate of the emission signal of the plasma light,analyzing the reference light comprises obtaining the change rate of the absorption signal of the reference light, anddetecting the etching end point comprises obtaining a compensated emission signal of the plasma light by dividing the change rate of the emission signal of the plasma light by the change rate of the absorption signal of the reference light.3. The substrate processing method of claim 1 , whereinthe reference light is introduced by a light source, and the plasma light is introduced by supplying a radio frequency (RF) power generated from a RF power supply, andthe light source and the RF power supply are synchronized ...

TRANSMISSION CHARGED PARTICLE MICROSCOPE WITH IMPROVED EELS/EFTEM MODULE

A method of using a Transmission Charged Particle Microscope comprising: 2. A method according to claim 1 , wherein:an on-axis dispersive ray entering said dispersing device crosses said optical axis at an intersection point p; within a given quadrupole, then option (a) is applied to this quadrupole;', 'between a pair of adjacent quadrupoles, then option (b) is applied to this pair of quadrupoles., 'in said second quadrupole series, if said intersection point p lies4. A method according to claim 1 , wherein claim 1 , in option (b) claim 1 , both quadrupoles are excited with the same polarity.5. A method according to claim 1 , wherein said energy-dispersed beam is de-magnified between said dispersing device and slit plane.7. A method according to claim 1 , wherein claim 1 , if said non-dispersive YZ ray enters said dispersing device at a distance dfrom the optical axis claim 1 , and has a maximum distance dfrom the optical axis within the second quadrupole series claim 1 , then d/d≥3 claim 1 , preferably ≥5 claim 1 , more preferably ≥10.9. A method comprising:exciting a first series of quadrupoles to cause an off-axis, non-dispersive charged particle beam to propagate paraxial to an optical axis, the first series of quadrupoles arranged between a dispersive device and a slit plane; and based on the point coinciding with a single quadrupole of the second series of quadrupoles, exciting the single quadrupole of the second series of quadrupoles; and', 'based on the point coinciding with a location between two adjacent quadrupoles of the second series of quadrupoles, exciting the two adjacent quadrupoles of the second series of quadrupoles., 'exciting one or more quadrupoles of a second series of quadrupoles in response to a point an on-axis dispersive charged particle beam crosses the optical axis, the point located between the slit plane and an imaging plane, wherein to focus the on-axis dispersive charged particle beam onto the imaging plane, exciting one or more ...

PREPARATION OF CRYOGENIC SAMPLE, E.G. FOR CHARGED PARTICLE MICROSCOPY

A method of preparing a cryogenic sample (e.g. for study in a charged-particle microscope), whereby the sample is subjected to rapid cooling using a cryogen, comprising the following steps: 1. A method of preparing a cryogenic sample , whereby the sample is subjected to rapid cooling using a cryogen , the method comprising:providing two conduits for transporting cryogenic fluid, each of which conduits opens out into a mouthpiece, which mouthpieces are arranged to face each other across an intervening gap;placing the sample in said gap; andpumping cryogenic fluid through said conduits so as to concurrently flush from said mouthpieces, thereby suddenly immersing the sample in cryogenic fluid from two opposite sides,wherein by reducing the flush of cryogenic fluid applied from a first of said mouthpieces after a given time interval, such that the flush of cryogenic fluid from said first of said mouthpieces is different to that applied from the second of said mouthpieces.2. A method according to claim 1 , wherein the duration of the flush of cryogenic fluid applied from said first mouthpiece is shorter compared to that applied from said second mouthpiece.3. A method according to claim 1 , wherein the flushes from both mouthpieces commence substantially simultaneously.4. A method according to claim 1 , wherein the flush from said first mouthpiece is terminated after said given time interval.5. A method according to claim 1 , wherein a shutter is used to reduce the flush of cryogenic fluid applied from said first of said mouthpieces.6. A method according to claim 1 , wherein:said conduits are arranged in a plunger, whereby each conduit has an entrance aperture on an underside of the plunger, and said gap is provided as a slot in a topside of the plunger;a bath of cryogenic fluid is provided beneath said plunger; andsaid sample is inserted into said slot using a tool that applies downward pressure on said plunger, thereby at least partially submerging the plunger and ...

Gas Flow Control for Millisecond Anneal System

Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate. 1. A thermal processing system , comprising:a processing chamber comprising a top chamber separated from a bottom chamber by a wafer plane plate;a plurality of heat sources configured to provide heat for the thermal treatment of a substrate;a plurality of gas inlets configured to inject gas into the processing chamber;wherein one or more of the direction, size, position, shape, or arrangement of the gas inlets are configured to increase laminar flow across the wafer plane plate.2. The thermal processing system of claim 1 , wherein the plurality of gas inlets are arranged in separate top corners of the top chamber claim 1 , the gas inlets oriented to point to the substrate.3. The thermal processing system of claim 1 , wherein at least one of the plurality of gas inlets is positioned proximate to the wafer plane plate.4. The thermal processing system of claim 1 , wherein at least one of the plurality of gas inlets is positioned a first distance from a ceiling of the top chamber and a second distance from the wafer plane plate claim 1 , the first distance being greater than the second distance.5. The thermal processing system of claim 4 , wherein the system further comprises a plurality of gas inlets located in separate top corners of the top chamber.6. The thermal processing system of claim 1 , wherein at least one of the plurality of gas ...

Hybrid inspectors

Hybrid inspectors are provided. One system includes computer subsystems) configured for receiving optical based output and electron beam based output generated for a specimen. The computer subsystem(s) include one or more virtual systems configured for performing one or more functions using at least some of the optical based output and the electron beam based output generated for the specimen. The system also includes one or more components executed by the computer subsystem(s), which include one or more models configured for performing one or more simulations for the specimen. The computer subsystem(s) are configured for detecting defects on the specimen based on at least two of the optical based output, the electron beam based output, results of the one or more functions, and results of the one or more simulations.

DISPLACEMENT MEASURING APPARATUS, ELECTRON BEAM INSPECTION APPARATUS, AND DISPLACEMENT MEASURING METHOD

A displacement measuring apparatus includes an illumination system to obliquely irradiate the target object surface with beams, a sensor to receive a reflected light from the target object surface, an optical system to diverge the reflected light in a Fourier plane with respect to the target object surface, a camera to image a diverged beam in the Fourier plane, a gravity center shift amount calculation circuitry to calculate a gravity center shift amount of the reflected light in the light receiving surface of the sensor, based on a light quantity distribution of the beam imaged by the camera, and a measurement circuitry to measure a heightwise displacement of the target object surface by an optical lever method, using information on a corrected gravity center position obtained by correcting the gravity center position of the reflected light received by the sensor by using the gravity center shift amount. 1. A displacement measuring apparatus comprising:an illumination optical system configured to irradiate, from an oblique direction, a surface of a target object with a beam;a sensor configured to receive a reflected light from the surface of the target object irradiated with the beam;an optical system configured to diverge the reflected light in a Fourier plane with respect to the surface of the target object;a camera configured to image a diverged beam in the Fourier plane;a gravity center shift amount calculation circuitry configured to calculate a gravity center shift amount of the reflected light in a light receiving surface of the sensor, based on a light quantity distribution of the beam imaged by the camera; anda measurement circuitry configured to measure a heightwise displacement of the surface of the target object by an optical lever method, using information on a corrected gravity center position which is obtained by correcting a gravity center position of the reflected light received by the sensor by using the gravity center shift amount.2. The ...

CORRELATIVE OPTICAL AND CHARGED PARTICLE MICROSCOPE

A Correlative Light and Electron Microscope (CLEM) is equipped with a TEM column and a light microscope fitted between the pole shoes of the objective lens of the TEM. To enlarge the acceptance solid angle for enhanced sensitivity a truncated lens is used. It is noted that this does not imply that the lens shows astigmatism (it is not a cylindrical lens). 1. An apparatus for performing correlative optical microscopy and charged particle microscopy , the apparatus comprising:a charged particle column comprising a charged particle source (for producing a beam of charged particles along a particle-optical axis; and a magnetic objective lens comprising two pole shoes for focusing said charged particle beam;a sample position located between the pole shoes;an optical microscope for imaging a thin flat sample located at the sample position, the optical microscope showing an optical axis perpendicular to the particle-optical axis; anda sample holder for holding a thin flat sample in a first orientation in which the thin flat sample can be imaged by the particle-optical axis, and in a second orientation in which the thin flat sample is perpendicular to the optical axis; wherein:the optical microscope has an objective lens that is non-rotationally symmetric and is truncated to fit between the pole shoes of the magnetic objective lens, with the size parallel to the particle-optical axis smaller than the size perpendicular to the particle-optical axis, thereby showing different numerical apertures in two directions, and thus different resolutions in two directions; andthe acceptance solid angle for gathering light is larger than the acceptance solid angle of the largest rotationally symmetric lens fitting between the pole shoes.2. The apparatus of in which the sample holder is in the second orientation equipped to rotate the sample over 90 degrees in a plane perpendicular to the optical axis.3. The apparatus of in which the charged particle source is an electron source and the ...

Method and Apparatus for Reviewing Defects

A defect reviewing apparatus includes an illumination optical system that irradiates a sample with laser, a detection optical system that detects reflected light or scattered light from the sample, a processing portion that calculates coordinates of a defect based on the reflected light or scattered light detected, and an electron microscope that reviews the defect based on the coordinates of the defect calculated by the processing portion. In the illumination optical system, inspection modes are switched over based on defect information acquired in another inspection equipment. 1. A defect reviewing apparatus , comprising:an illumination optical system that irradiates a sample with laser, inspection modes being switched over in the illumination optical system based on defect information acquired in another inspection equipment;a detection optical system that detects reflected light or scattered light from the sample;a processing portion that calculates coordinates of a defect based on the reflected light or scattered light detected by the detection optical system; andan electron microscope that reviews the defect based on the coordinates of the defect calculated by the processing portion.2. The defect reviewing apparatus according to claim 1 , wherein a size of an illumination spot of the laser with which the sample is irradiated is changed in the illumination optical system based on defect information acquired in another inspection equipment.3. The defect reviewing apparatus according to claim 2 , wherein a size of an illumination spot of the laser with which the sample is irradiated is changed in the illumination optical system based on size information of a defect acquired in another inspection equipment.4. The defect reviewing apparatus according to claim 3 , wherein a size of an illumination spot of the laser with which the sample is irradiated is changed by replacement of or change in a distance between lenses claim 3 , which the illumination optical system ...

SYSTEM FOR DYNAMICALLY COMPENSATING POSITION ERRORS OF A SAMPLE

Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber. 1. A system comprising:one or more sensing units configured to generate a signal based on a position of a sample; anda controller configured to:determine the position of the sample based on the signal; andin response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.2. The system of claim 1 , wherein a sensing unit of the one or more sensing units comprises:an emitter configured to emit light; anda sensor configured to detect the emitted light, and/orwherein the one or more sensing units are positioned with respect to an edge of the sample, wherein the position of the sample is determined based on one or more sensors of the one or more sensing units detecting light emitted by one or more emitters of the one or more sensing units.3. The system of claim 1 , wherein the controller is further configured to:determine an offset between the determined position and a reference position;control the first handling unit based on the determined offset, for a transfer of the sample between an interface and the first chamber;in response to the determined offset being higher than a threshold value, control the second handling unit based on the determined offset, for a transfer of the sample between an interface and the second ...

Joint Electron-Optical Columns for Flood-Charging and Image-Forming in Voltage Contrast Wafer Inspections

A scanning electron microscopy system may include an electron-optical sub-system and a controller. The electron-optical sub-system may include an electron source and an electron-optical column configured to direct an electron beam to a sample. The electron-optical column may include a double-lens assembly, a beam limiting aperture disposed between a first and second lens of the double-lens assembly, and a detector assembly configured to detect electrons scattered from the sample. In embodiments, the controller of the scanning electron microscopy system may be configured to: cause the electron-optical sub-system to form a flooding electron beam and perform flooding scans of the sample with the flooding electron beam; cause the electron-optical sub-system to form an imaging electron beam and perform imaging scans of the sample with the imaging electron beam; receive images acquired by the detector assembly during the imaging scans; and determine characteristics of the sample based on the images. 1. A scanning electron microscopy system , comprising: an electron source configured to generate an electron beam;', a double-lens assembly including a first lens and a second lens;', 'a beam limiting aperture disposed between the first lens and the second lens of the double-lens assembly; and, 'an electron-optical column configured to direct the electron beam to a sample, the electron-optical column comprising, 'a detector assembly configured to detect electrons scattered from a surface of the sample; and, 'an electron-optical sub-system comprising generate one or more control signals configured to cause the electron-optical sub-system to form a flooding electron beam and perform one or more flooding scans of a portion of the sample with the flooding electron beam;', 'generate one or more control signals configured to cause the electron-optical sub-system to form an imaging electron beam and perform one or more imaging scans of the portion of the sample with the imaging ...

ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD USING THE SAME

An observation apparatus and method that avoids drawbacks of a Lorentz method and observes a weak scatterer or a phase object with in-focus, high resolution, and no azimuth dependency, by a Foucault method observation using a hollow-cone illumination that orbits and illuminates an incident electron beam having a predetermined inclination angle, an electron wave is converged at a position (height) of an aperture plate downstream of a sample and a bright field condition in which a direct transmitted electron wave of the sample passes through the aperture plate, a dark field condition in which the transmitted electron wave is shielded and a Schlieren condition in which approximately half of the transmitted wave is shielded as a boundary condition of both of the above conditions are controlled, and a spatial resolution of the observation image is controlled by selecting multiple diameters and shapes of the opening of the aperture plate. 1. An electron microscope comprising:a source of an electron beam;an irradiation lens system including at least two electron lenses for irradiating a sample with the electron beam emitted from the source;a sample holding device for holding the sample irradiated with the electron beam;an objective lens system for forming an image of the sample;an aperture device that is disposed downstream of the sample holding device in a travel direction of the electron beam;an imaging lens system that is disposed downstream of the aperture device in the travel direction of the electron beam;an observation plane that observes the image of the sample by the imaging lens system or an image of the source of the electron beam, that is, a diffraction pattern of the sample;a recording device for recording the image of the sample or the diffraction pattern of the sample; andat least two stages of electron beam deflectors that are disposed between the source of the electron beam and the sample holding device,wherein the image of the source of the electron beam ...

Apparatus of Plural Charged-Particle Beams

A new multi-beam apparatus with a total FOV variable in size, orientation and incident angle, is proposed. The new apparatus provides more flexibility to speed the sample observation and enable more samples observable. More specifically, as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry, the new apparatus provide more possibilities to achieve a high throughput and detect more kinds of defects. 1. A multi-beam apparatus for observing a surface of a sample , comprising:an electron source;a condenser lens below said electron source;a source-conversion unit below said condenser lens;an objective lens below said source-conversion unit;a deflection scanning unit below said source-conversion unit;a sample stage below said objective lens;a beam separator below said source-conversion unit;a secondary projection imaging system; and wherein said electron source, said condenser lens and said objective lens are aligned with a primary optical axis of said apparatus, and said sample stage sustains said sample so that said surface faces to said objective lens,', 'wherein said source-conversion unit comprises a beamlet-limit means with a plurality of beam-limit openings, and an image-forming means with a plurality of electron optics elements and movable along said primary optical axis,', 'wherein said electron source generates a primary-electron beam along said primary optical axis and said condenser lens focuses said primary-electron beam,', 'wherein a plurality of beamlets of said primary-electron beam pass through said plurality of beam-limit openings respectively, and is deflected by said plurality of electron optics elements towards said primary optical axis to form a plurality of virtual images of said electron source respectively,', 'wherein said plurality of beamlets is focused by said objective lens onto said surface and therefore forms a plurality of probe spots thereon respectively, and said deflection ...

IMAGING DEVICE FOR IMAGING AN OBJECT AND FOR IMAGING A STRUCTURAL UNIT IN A PARTICLE BEAM APPARATUS

The system described herein relates to an imaging device for imaging an object in a particle beam apparatus and/or for imaging a structural unit of a particle beam apparatus, and to a particle beam apparatus having such an imaging device. The imaging device has an illumination unit having a first switching state and a second switching state for illuminating the object and/or the structural unit with illumination light, where, in the first switching state, the illumination light comprises only light of a first spectral range and where, in the second switching state, the illumination light comprises only light of a second spectral range. The imaging device has a control unit for switching the illumination unit into the first switching state or into the second switching state, and a camera unit for imaging the object and/or the structural unit. 1. An imaging device for imaging an object in a particle beam apparatus and/or for imaging a structural unit of the particle beam apparatus , havingat least one illumination unit having a first switching state and a second switching state for illuminating the object and/or for illuminating the structural unit with illumination light, wherein, in the first switching state, the illumination light comprises only light of a first spectral range and wherein, in the second switching state, the illumination light comprises only light of a second spectral range,at least one control unit for switching the illumination unit into the first switching state or into the second switching state, and havingat least one camera unit for imaging the object and/or for imaging the structural unit with light of the first spectral range in the first switching state of the illumination unit or with light of the second spectral range in the second switching state of the illumination unit.2. The imaging device as claimed in claim 1 , wherein the imaging device has at least one of the following features:(i) the first spectral range comprises only the ...

Holder device for electron microscope

Disclosed is a holder device for an electron microscope, which efficiently collects light emitted when electrons collide with a sample inside the electron microscope and is selectively usable in various electron microscopes since it can be easily attached to and detached from the electron microscopes. The holder device includes a frame; a sample support block configured to be supported on the frame and comprising a sample mounting portion to support an edge of a sample; a mirror unit configured to comprise an upper mirror and a lower mirror respectively arranged above and below the sample and reflect light radiating from the sample, which is mounted to the sample mounting portion and to which an electron beam is emitted, in a predetermined direction; a condensing lens configured to condense light from the mirror unit on a predetermined target; and an optical fiber configured to collect light from the condensing lens.

Arrayed Column Detector

An electron beam inspection system is disclosed, in accordance with one or more embodiments of the present disclosure. The inspection system may include an electron beam source configured to generate one or more primary electron beams. The inspection system may also include an electron-optical column including a set of electron-optical elements configured to direct the one or more primary electron beams to a sample. The inspection system may further include a detection assembly comprising: a scintillator substrate configured to collect electrons emanating from the sample, the scintillator substrate configured to generate optical radiation in response to the collected electrons; one or more light guides; one or more reflective surfaces configured to receive the optical radiation and direct the optical radiation along the one or more light guides; and one or more detectors configured to receive the optical radiation from the light guide. 1. An electron beam inspection system , comprising:an electron beam source configured to generate one or more primary electron beams;an electron-optical column including a set of electron-optical elements configured to direct the one or more primary electron beams to a sample; and a scintillator substrate configured to collect electrons emanating from the sample in response to the one or more primary electron beams, the scintillator substrate configured to generate optical radiation in response to the collected electrons;', 'one or more light guides;', 'one or more reflective surfaces configured to receive the optical radiation generated by the scintillator substrate and direct the optical radiation along the one or more light guides; and', 'one or more detectors configured to receive the optical radiation from the light guide., 'a detection assembly comprising2. The electron beam inspection system of claim 1 , wherein the electron beam source comprises a plurality of primary electron beams.3. The electron beam inspection system of ...

Signal separator for a multi-beam charged particle inspection apparatus

A multi-beam charged particle column for inspecting a surface of a sample includes a source for creating multiple primary charged particle beams which are directed towards the sample, an objective lens unit for focusing the primary charged particle beams on the sample, a detector for detecting signal charged particles from the sample, and a magnetic deflection unit arranged between the detector and the sample. The magnetic deflection unit includes a plurality of strips of a magnetic or ferromagnetic material. At least two strips of the plurality of strips are located at opposite sides of a trajectory of a primary charged particle beam and within a distance equal to a pitch of the trajectories of the primary charged particle beams at the magnetic deflection unit. The strips are configured to establish a magnetic field having field lines substantially perpendicular to the trajectories of the primary charged particle beams. 1: A multi-beam charged particle column for inspecting a surface of a sample , which multi-beam charged particle column comprising:one or more emitters which are arranged for creating multiple primary charged particle beams directed along trajectories towards the surface of the sample arranged on a sample holder,an objective lens unit for focusing said multiple primary charged particle beams on said sample,a detector system for detecting signal charged particles created upon incidence of the primary charged particle beams on said sample,a magnetic deflection unit arranged between the detector system and the sample holder, wherein the magnetic deflection unit comprises a plurality of strips of a magnetic or ferromagnetic material, wherein at least one strip of said plurality of strips is located next to a trajectory of a primary charged particle beam and wherein said at least one strip is arranged within a distance equal to a pitch of the trajectories of the primary charged particle beams at the magnetic deflection unit, wherein the plurality of ...

Apparatus and method for inspecting a surface of a sample, using a multi-beam charged particle column

Apparatus and method for inspecting a surface of a sample. The apparatus includes a multi-beam charged particle column comprising a source for creating multiple primary beams directed towards the sample, an objective lens for focusing the primary beams on the sample, an electron-photon converter unit having an array of electron to photon converter sections, each section is located next to a primary beam within a distance equal to a pitch of the primary beams at the electro-photon converter unit, a photon transport unit for transporting light from the electron to photon converter sections to a photo detector, and an electron collection unit for guiding secondary electrons created in the sample, towards the electron-photon converter unit. The electron collection unit is arranged to project secondary electrons created in the sample by one of said primary beams to at least one of the electron to photon converter sections. 1. A multi-beam charged particle column for inspecting a surface of a sample , which multi-beam charged particle column comprising:one or more emitters which are arranged for creating multiple primary charged particle beams directed along trajectories towards the surface of the sample,an objective lens unit for focusing said multiple primary charged particle beams on said sample,an electron-photon converter unit comprising a plurality of electron to photon converter sections, wherein at least one electron to photon converter section of said plurality of electron to photon converter sections is located next to a trajectory of a primary charged particle beam and within a distance equal to a pitch of trajectories of the primary charged particle beams at the electron-photon converter unit,a photon transport unit for transporting light from said electron to photon converter sections to a light detector, andan electron collection unit comprising multi aperture plates for guiding secondary electrons created in the sample upon incidence of the primary charged ...

PARTICLE DETECTION ASSEMBLY, SYSTEM AND METHOD

An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, including a scintillator configured with a scintillator layer formed with a scintillating surface. The scintillator layer emits light signals corresponding to impingement of electrons upon the scintillating surface. A light guide plate is coupled to the scintillator layer and includes a peripheral surface. One or more silicon photomultiplier devices are positioned upon the peripheral surface, wherein one or more silicon photomultiplier devices are arranged perpendicularly or obliquely relative to the scintillating surface. The silicon photomultiplier device is configured to yield an electrical signal from an electron impinging upon the scintillator surface. 1. An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam , comprising:a scintillator comprising a scintillator layer including a scintillating surface, the scintillator layer emitting light signals corresponding to impingement of electrons upon the scintillating surface;a light guide plate coupled to the scintillator layer and comprising a peripheral surface, the light guide plate being segmented into two or more segments; andtwo or more silicon photomultiplier devices positioned upon the peripheral surface of a least one of the segments, wherein the two or more silicon photomultiplier devices are arranged perpendicularly or obliquely relative to the scintillating surface, the silicon photomultiplier device being configured to yield an electrical signal from an electron impinging upon the scintillator surface.2. An electron detector assembly according to claim 1 , wherein at least one or more of the two or more silicon photomultiplier devices is connected to its individual pre-amplifier.3. An electron detector assembly according to claim 2 , wherein claim 2 , in a common segment claim 2 , an output of a first individual pre-amplifier ...

METHOD AND DEVICE FOR TIME-RESOLVED PUMP-PROBE ELECTRON MICROSCOPY

A method of time-resolved pump-probe electron microscopy, comprises the steps of irradiating a sample () with a photonic pump pulse () being directed on a pump pulse path () from a photonic source to the sample (), irradiating the sample () with an electron probe pulse () being directed on an electron pulse path () from an electron pulse source () to the sample (), wherein the photonic pump pulse () and the electron probe pulse () arrive at the sample () with a predetermined temporal relationship relative to each other, and detecting a sample response to the electron probe pulse () irradiation with a detector device (), wherein the photonic source comprises a photonic lattice structure () being arranged adjacent to the electron pulse path (), and the photonic pump pulse () is created by an interaction of the electron probe pulse () with the photonic lattice structure (). Furthermore, an electron microscopy apparatus, configured for time-resolved pump-probe electron microscopy, and a sample supply device () for an electron microscopy apparatus () are described.

Method of Aberration Measurement and Electron Microscope

There is provided a method of aberration measurement capable of reducing the effects of image drift. The novel method of aberration measurement is for use in an electron microscope. The method comprises the steps of: acquiring a first image that is a TEM (transmission electron microscope) image of a sample; scanning the illumination angle of an electron beam impinging on the sample and acquiring a second image by multiple exposure of a plurality of TEM images generated at different illumination angles; and calculating aberrations from the first and second images. 1. A method of measuring aberrations in an electron microscope , comprising the steps of:acquiring a first image that is a transmission electron microscope (TEM) image of a sample;scanning the illumination angle of an electron beam impinging on the sample to generate a plurality of TEM images at different values of the illumination angle and acquiring a second image by multiple exposure of the TEM images; andcalculating aberrations from the first and second images.2. A method of measuring aberrations as set forth in claim 1 , wherein during the step of acquiring said second image claim 1 , the illumination angle is scanned using deflectors incorporated in an illumination system of said electron microscope.3. A method of measuring aberrations as set forth in claim 1 , wherein during the step of acquiring said second image claim 1 , the illumination angle of the electron beam impinging on said sample is scanned from a first illumination angle to an nth illumination angle (where n is an integer equal to or greater than 2) repeatedly and plural TEM images are subjected to a multiple exposure process.4. A method of measuring aberrations as set forth in claim 1 , wherein during the step of calculating said aberrations claim 1 , a correlation function is calculated both from said first image and from said second image claim 1 , and said aberrations are found from the positions of plural peaks appearing in the ...

DETECTION METHOD FOR USE IN CHARGED-PARTICLE MICROSCOPY

A method of investigating a sample using a charged-particle microscope is disclosed. By directing an imaging beam of charged particles at a sample, a resulting flux of output radiation is detected from the sample. At least a portion of the output radiation is examined using a detector, the detector comprising a Solid State Photo-Multiplier. The Solid State Photo-Multiplier is biased so that its gain is matched to the magnitude of output radiation flux.

System and method for spatially resolved optical metrology of an ion beam

Provided herein are systems and methods for spatially resolved optical metrology of an ion beam. In some embodiments, a system includes a chamber containing a plasma/ion source operable to deliver an ion beam to a wafer, and an optical collection module operable with the chamber, wherein the optical collection module includes an optical device for measuring a light signal from a volume of the ion beam. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the measured light signal, thus corresponding to the property of the sampled plasma volume.

OPTICAL OBJECTIVE LENS

An objective lens for forming an image of an object. The objective lens includes, sequentially from an image side to an object side, a first lens group having negative refractive power, and a second lens group having positive refractive power.

Apparatus and Method for Sample Preparation

A sample preparation apparatus () is used to prepare a cross section of a sample (S) by irradiating it with an ion beam. The apparatus () includes an ion beam generator (), a shield plate () disposed to cover a part of the sample (S) to shield the sample (S) from the ion beam, and a controller () controlling the ion beam generator (). The controller () controls performance of first and second operations. In the first operation, the ion beam is accelerated by a first accelerating voltage and hits the sample (S) while the sample (S) and the shield plate () are located in a given positional relationship. In the second operation, the ion beam is accelerated by a second accelerating voltage lower than the first accelerating voltage and hits the sample (S) while the given positional relationship is maintained. 1. A sample preparation apparatus for preparing a cross section of a sample by irradiating the sample with an ion beam , said sample preparation apparatus comprising:an ion beam generator producing the ion beam;a shield plate disposed to cover a part of the sample and operative to shield the sample from the ion beam; anda controller for controlling the ion beam generator,wherein said controller performs a first operation, wherein the controller controls the ion beam generator such that the ion beam is accelerated by a first accelerating voltage and hits the sample while the sample and the shield plate are located in a given positional relationship, and a second operation, wherein the controller controls the ion beam generator such that the ion beam is accelerated by a second accelerating voltage lower than the first accelerating voltage and hits the sample while the given positional relationship is maintained.2. The sample preparation apparatus as set forth in claim 1 , further including a storage device in which first processing conditions including information related to the first operation and about a duration of the ion beam irradiation and about the first ...

Charged Particle Beam Apparatus

An imaging device images a sample holder held by a sample stage. At a front side (target side) of the imaging device, a light emitter device array and a mask array are provided. A plurality of light beams are generated by the light emitter device array. A plurality of center parts of the plurality of light beams are masked by the mask array. A plurality of shadows produced thereby are covered by a plurality of peripheral parts of the plurality of light beams.

OPTICAL SYSTEM WITH COMPENSATION LENS

An optical system used in a charged particle beam inspection system. The optical system includes one or more optical lenses, and a compensation lens configured to compensate a drift of a focal length of a combination of the one or more optical lenses from a first medium to a second medium.

High voltage electron beam system and method

A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

HOLDER AND CHARGED PARTICLE BEAM APPARATUS

According to one embodiment, a holder includes a top member, a side member, and a bottom member. The top member has a hole for allowing transmission of a charged particle beam, and the sample is mountable in the hole. The bottom member is provided to overlap with the top member in a plan view. The side member is connected to a part of the top member and a part of the bottom member such that the top member and the bottom member are separated from each other in a cross-sectional view. An opening portion is a region surrounded by the top member, the side member, and the bottom member, and a scintillator is provided in the opening portion. 1. A holder comprising:a top member that has a first hole for allowing transmission of a charged particle beam and in which a sample is mountable in the first hole;a bottom member that is provided to overlap with the top member in a plan view;a side member that is connected to a part of the top member and a part of the bottom member such that the top member and the bottom member are separated from each other in a cross-sectional view;an opening portion that is a region surrounded by the top member, the side member, and the bottom member;a first scintillator that is provided in the opening portion; and a first light guide that has a function of allowing transmission of light and not allowing transmission of an X-ray, and', 'a second hole that is provided in the first light guide, wherein, 'a first optical member including'}the first optical member is provided in the opening portion such that a part of a side surface of the first light guide is exposed from the side member,the second hole overlaps with the first hole in a plan view, andthe first scintillator is provided between the first light guide and the bottom member such that a part of the first scintillator is exposed in the second hole.2. (canceled)3. The holder according to claim 1 , further comprising: a second light guide and a third light guide each of which has a function of ...

Charged Particle Beam Irradiation Apparatus, Charged Particle Beam Image Acquisition Apparatus, and Charged Particle Beam Inspection Apparatus

According to one aspect of the present invention, a charged particle beam irradiation apparatus includes an electromagnetic lens configured to refract the charged particle beam; a plurality of electrodes arranged in a magnetic field of the electromagnetic lens and arranged to surround an outer space of a passage region of the charged particle beam; a supply mechanism configured to supply a gas to the space surrounded by the plurality of electrodes; a potential control circuit configured to control potentials of the plurality of electrodes so that a plasma is generated in the space surrounded by the plurality of electrodes and movements of electrons or positive ions generated by the plasma are controlled; and a stage configured to dispose a substrate irradiated with a charged particle beam passing through the electromagnetic lens, wherein the substrate is irradiated with light radiated by the plasma. 1. A charged particle beam irradiation apparatus comprising:an emission source configured to emit a charged particle beam;an electromagnetic lens configured to refract the charged particle beam;a plurality of electrodes arranged in a magnetic field of the electromagnetic lens and arranged to surround an outer space of a passage region of the charged particle beam;a supply mechanism configured to supply a gas to the space surrounded by the plurality of electrodes;a potential control circuit configured to control potentials of the plurality of electrodes so that a plasma is generated in the space surrounded by the plurality of electrodes and movements of electrons or positive ions generated by the plasma are controlled; anda stage configured to dispose a substrate irradiated with a charged particle beam passing through the electromagnetic lens,wherein the substrate is irradiated with light radiated by the plasma.2. The apparatus according to claim 1 ,wherein the plasma is generated by a magnetron discharge.3. The apparatus according to claim 1 ,wherein the plasma is ...

CHARGED PARTICLE BEAM DEVICE, IMAGE GENERATION METHOD, OBSERVATION SYSTEM

Provided is a charged particle beam device capable of observing the interior and the surface of a sample in a simple manner. This charged particle beam device operates in a transmitted charged particle image mode and a secondary charged particle image mode. In the transmitted charged particle image mode, a transmitted charged particle image is produced on the basis of a detection signal () associated with light emitted from a light-emitting member () that emits light upon being irradiated with transmitted charged particles transmitted through the interior of a sample (). In the secondary charged particle image mode, a secondary charged particle image is produced on the basis of a detection signal () caused by reflected charged particles or secondary charged particles () from the sample (). 1. A charged particle beam device comprising:a charged particle optical barrel adapted to irradiate a sample with a primary charged particle beam;a sample stage adapted to allow a light-emitting member or a sample table including the light-emitting member to be attachably/detachably arranged, the light-emitting member emitting light by being irradiated with a transmitted charged particle having been transmitted through an interior of the sample;a detector adapted to detect a signal from the sample; anda control unit adapted to control the detector in a transmitted charged particle image mode to generate a transmitted charged particle image based on a detection signal of light from the light-emitting member, and in a secondary charged particle image mode to generate a secondary charged particle image based on a detection signal caused by a secondary charged particle or a reflection charged particle from the sample.2. The charged particle beam device according to claim 1 , whereinthe light from the light-emitting member and the detection signal caused by the secondary charged particle or the reflection charged particle from the sample are detected by the same detector.3. The charged ...

NONDESTRUCTIVE SAMPLE IMAGING

A system and method for imaging a sample having a complex structure (such as an integrated circuit) implements two modes of operation utilizing a common electron beam generator that produces an electron beam within a chamber. In the first mode, the electron beam interacts directly with the sample, and backscattered electrons, secondary electrons, and backward propagating fluorescent X-rays are measured. In the second mode, the electron beam interrogates the sample via X-rays generated by the electron beam within a target that is positioned between the electron beam generator and the sample. Transmitted X-rays are measured by a detector within the vacuum chamber. The sample is placed on a movable platform to precisely position the sample with respect to the electron beam. Interferometric and/or capacitive sensors are used to measure the position of the sample and movable platform to provide high accuracy metadata for performing high resolution three-dimensional sample reconstruction. 1. A system for imaging an integrated circuit (IC) sample , the system comprising:a sample holder configured to secure the IC sample;an electron beam generator configured to produce an electron beam within a vacuum chamber;an electron detector configured to measure electrons that have interacted with the IC sample;a spectral X-ray detector configured to measure first X-rays resulting from the electron beam interacting with the IC sample and second X-rays transmitted through the IC sample, the second X-rays resulting from the electron beam interacting with a target that is positioned between the electron beam generator and the sample holder; anda memory device configured to store data generated by the electron detector and the spectral X-ray detector.2. The system of claim 1 , further comprising a processor configured to reconstruct the IC sample using the data stored in the memory device.3. The system of claim 1 , further comprising a processor configured to perform a three-dimensional ...

SYSTEM FOR DISCHARGING AN AREA THAT IS SCANNED BY AN ELECTRON BEAM

A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object. 1. A system for imaging an object , the system comprises:electron optics that is configured to scan a first area of the object with at least one electron beam; wherein the electron optics comprises a first electrode; andlight optics that is configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.2. (canceled)3. The system according to wherein the light optics that is configured to illuminate the at least one target thereby causing an emission of electrons between the first electrode and the first area.4. The system according to claim 1 , wherein the light optics is configured to illuminate both the first electrode and the object.5. The system according to claim 1 , comprising a controller that is configured to determine which target of the at least one target to illuminate by the light optics.67.-. (canceled)8. The system according to claim 1 , wherein the first electrode comprises a metal mirror; wherein the light optics is configured to illuminate the metal mirror with a beam of light; and wherein the metal mirror is configured to direct the beam of light towards the first area.9. (canceled)10. The system according to claim 1 , wherein the light optics is configured to illuminate the first area and the first electrode simultaneously.11. The system according to claim 1 , wherein the first area is scanned during a scan period; and wherein the light optics is configured to illuminate the first area and the first ...

SHAPE METRIC BASED SCORING OF WAFER LOCATIONS

Methods and systems for shape metric based scoring of wafer locations are provided. One method includes selecting shape based grouping (SBG) rules for at least two locations on a wafer. For one of the wafer locations, the selecting step includes modifying distances between geometric primitives in a design for the wafer with metrology data for the one location and determining metrical complexity (MC) scores for SBG rules associated with the geometric primitives in a field of view centered on the one location based on the distances. The selecting step also includes selecting one of the SBG rules for the one location based on the MC scores. The method also includes sorting the at least two locations on the wafer based on the SBG rule selected for the at least two locations. 1. A system configured for shape metric based sorting of wafer locations , comprising: selecting shape based grouping rules for at least two locations on a wafer, wherein for one of the locations on the wafer, selecting the shape based grouping rule comprises:', 'determining distances between geometric primitives in a field of view centered on the one location by modifying distances between the geometric primitives in a design for the wafer with metrology data for the one location on the wafer;', 'determining metrical complexity scores for shape based grouping rules associated with the geometric primitives in the field of view based on the determined distances between the geometric primitives; and', 'selecting one of the shape based grouping rules for the one location based on the metrical complexity scores; and, 'one or more computer subsystems configured forsorting the at least two locations on the wafer based on the shape based grouping rules selected for the at least two locations.2. The system of claim 1 , wherein said selecting one of the shape based grouping rules comprises identifying one of the shape based grouping rules having a maximum of the metrology complexity scores as a most possible ...

PHOTOCATHODE INCLUDING FIELD EMITTER ARRAY ON A SILICON SUBSTRATE WITH BORON LAYER

A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems. 1. A photocathode comprising:a silicon substrate having opposing first and second surfaces and including a plurality of integral field emitter protrusions, each said field emitter protrusion having fixed portion integrally connected to the silicon substrate and extending from said second surface to a tip portion, anda substantially pure boron layer hermetically disposed at least on the tip portion of each said field emitter protrusion.2. The photocathode of claim 1 , wherein the silicon substrate further comprises dopants configured such that claim 1 , during operation of said photocathode claim 1 , each said field emitter protrusion operates as a field emitter in a reverse bias mode.3. The photocathode of claim 1 , wherein the plurality of field emitter protrusions are arranged in a two-dimensional periodic pattern on said second surface.4. The photocathode of claim 1 , wherein said substantially pure boron layer has a thickness in the range of approximately 1 nm to 5 nm.5. The photocathode of claim 1 , ...

HEIGHT DETECTION APPARATUS AND CHARGED PARTICLE BEAM APPARATUS

A height detection apparatus is configured to project a pattern on a sample arranged at any of a plurality of reference positions and configured to detect a height of the sample. The apparatus includes: a projection optical system that generates a plurality of spatially separated light beams each having the pattern and projects the generated spatially separated light beams onto the sample; an imaging element that images the pattern reflected from the sample; a detection optical system that guides the pattern reflected from the sample to the imaging element; and at least one optical path length correction member disposed on an optical path different from an optical path having a shortest optical path length among a plurality of optical paths corresponding to the plurality of light beams at a position where the plurality of light beams is spatially separated. 1. A height detection apparatus configured to project a pattern on a sample arranged at any of a plurality of reference positions and configured to detect a height of the sample from the reference position on the basis of the pattern reflected from the sample , the apparatus comprising:a projection optical system that generates a plurality of spatially separated light beams each having the pattern and projects the generated spatially separated light beams onto the sample;an imaging element that images the pattern reflected from the sample;a detection optical system that guides the pattern reflected from the sample to the imaging element; andat least one optical path length correction member disposed on an optical path different from an optical path having a shortest optical path length among a plurality of optical paths corresponding to the plurality of light beams at a position where the plurality of light beams is spatially separated.2. The height detection apparatus according to claim 1 , whereinthe detection optical system outputs light beams incident from the plurality of optical paths toward the one imaging ...

ATTOMICROSCOPY: ATTOSECOND ELECTRON IMAGING AND MICROSCOPY

System and method for Ultrafast Electron Diffraction (UED) and Microscopy (UEM) configured to image atomic motion in real time with sub-femtosecond temporal resolution. Presented methodology utilizes the interaction of the pump optical pulse with the initial electron pulse that has been gated with the gating optical pulse. The initial electron pulse is generated in the electron microscope by the pulse of auxiliary light. In one case, the pump and gating pulses have attosecond duration and are duplicates of one another. The use of attosecond optical pulse (with frequency spectrum extending over two octaves in the visible and flanking spectral ranges) for optical gating of a pulse of electrons.

Laser-Assisted Electron-Beam Inspection for Semiconductor Devices

Methods and apparatuses for laser-assisted electron-beam inspection (EBI) are provided. The apparatus includes an EBI device and a laser illumination device. The EBI device includes an e-beam source configured to emit an incident e-beam, a deflector configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device, and an electron detector configured to detect emergent electrons generated by the incident e-beam projected onto the surface. The laser illumination device includes a laser source configured to generate a laser, and a guiding device configured to guide the laser to be projected onto the semiconductor device. The laser changes the emergent electrons to cause, in a positive mode of the EBI apparatus, a PN junction of an NMOS of the semiconductor device to be in a conduction state.

SURFACE PROCESSING APPARATUS

A surface processing apparatus is an apparatus which performs surface processing on an inspection object by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage on which an inspection object to be irradiated with the electron beam is set; and an optical microscope for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object is set at 10 nA to 100 A. 1. A surface processing apparatus which performs surface processing on an inspection object by irradiating the inspection object with an electron beam , comprising:an electron source which generates the electron beam;a lens system which controls a beam shape of the electron beam;a stage on which the inspection object to be irradiated with the electron beam is set; andan optical microscope for checking a position to be irradiated with the electron beam, whereina current value of the electron beam which irradiates the inspection object is set at 10 nA to 100 A.2. A surface processing apparatus which performs surface processing on an inspection object by irradiating the inspection object with electron beams , comprising:a plurality of electron sources which generate the electron beams, respectively;a plurality of lens systems which control beam shapes of the electron beams emitted from the plurality of electron sources, respectively;a stage on which the inspection object to be irradiated with the electron beams is set; andan optical microscope for checking positions to be irradiated with the electron beams, whereina current value of the electron beams which irradiate the inspection object is set at 10 nA to 100 A.3. A surface processing apparatus which performs surface processing on an inspection object by irradiating the inspection object with an electron beam , comprising: ...

Charged Particle Beam Apparatus

Disclosed is a charged particle beam apparatus wherein charged particles emitted from a sample are efficiently acquired at a position as close as possible to the sample, said position being in the objective lens. This charged particle beam apparatus is provided with: a charged particle beam receiving surface that is provided with a scintillator that emits light by means of charged particles; a photodetector that detects light emitted from the scintillator; a mirror that guides, to the photodetector, the light emitted from the scintillator; and an objective lens for focusing the charged particle beam to a sample. A distance (Lsm) between the charged particle beam receiving surface and the mirror is longer than a distance (Lpm) between the photodetector and the mirror, and the charged particle beam receiving surface, the mirror, and the photodetector are stored in the objective lens. 1. A charged particle beam apparatus comprising a charged particle beam receiving surface including a scintillator for emitting light by a charged particle , a photodetector for detecting the light emitted from the scintillator , a mirror for guiding the light emitted from the scintillator to the photodetector , and an objective lens for focusing a charged particle beam to a sample;wherein a distance Lsm between the charged particle beam receiving surface and the mirror is longer than a distance Lpm between the photodetector and the mirror; andwherein the charged particle beam receiving surface, the mirror, and the photodetector are stored inside the objective lens.2. A charged particle beam apparatus comprising a charged particle receiving surface including a scintillator for emitting light by a charged particle , a photodetector for detecting the light emitted from the scintillator , a mirror for guiding the light emitted from the scintillator to the photodetector , and an objective lens for focusing a charged particle beam to a sample;wherein in a projection drawing projecting a ...

Distortion Correction Method and Electron Microscope

There is provided a method which is for use in a charged particle beam system including an illumination system equipped with an aberration corrector having a plurality of stages of multipole elements and a transfer lens system disposed between the multipole elements, the method being capable of correcting distortion in a shadow of an aperture of the illumination system. The method involves varying excitations of the transfer lens system to correct distortion in the shadow of the aperture of the illumination system.

LASER-BASED PHASE PLATE IMAGE CONTRAST MANIPULATION

Methods and systems for implementing laser-based phase plate image contrast enhancement are disclosed herein. An example method at least includes forming at least one optical peak in a diffraction plane of an electron microscope, and directing an electron beam through the at least one optical peak at a first location, where the first location determines an amount of phase manipulation the optical peak imparts to an electron of the electron beam. 1. An apparatus for image contrast optimization , the apparatus comprising:an electron source coupled to provide an electron beam to a sample;one or more deflectors coupled to reposition the electron beam in response to a control signal;an optical source coupled to provide an optical beam, the optical beam a high energy optical beam;an optical cavity coupled to receive the optical beam and to form at least one optical peak within the optical cavity, the optical cavity arranged at a diffraction plane of an electron microscope; and 'direct, by the one or more of the deflectors, the electron beam through the at least one optical peak at a first location, wherein the first location determines an amount of phase manipulation the optical peak imparts to an electron of the electron beam.', 'a controller coupled to at least the one or more deflectors, the controller including or coupled to non-transitory computer readable medium including code that, when executed by the controller, causes the controller to2. The apparatus of claim 1 , wherein the first location is a peak intensity location of the optical peak.3. The apparatus of claim 1 , wherein the first location is a location with an intensity less than a peak intensity of the optical peak.4. The apparatus of claim 1 , wherein the at least one optical peak is formed from an optical pulse.5. The apparatus of claim 1 , wherein the at least one optical peak is part of an optical standing wave.6. The apparatus of claim 5 , wherein the optical source provides a continuous wave optical ...