ПОГРУЗОЧНО-РАЗГРУЗОЧНОЕ УСТРОЙСТВО ДЛЯ ПОЛУПРОВОДНИКОВЫХ ПЛАСТИН ДЛЯ УСТАНОВКИ ИОННОЙ ИМПЛАНТАЦИИ

Предлагается устройство сканирования и наклона 26 для установки ионной имплантации, в котором узел стола, принимающего пластину, 28 принимается на концевом элементе многоосевой рычажной системы, которая способна работать, осуществляя сканирующее движение пластины вдоль прямой линии, которая пересекает ось наклона пластины в любом положении наклона узла пластины. Рычажная система содержит систему направляющей и линейного подшипника 110, которая взаимно соединяет входной элемент с конечным элементом рычажной системы для ограничения сканирующего движения до прямой линии.

Ionenimplantier-Gerät mit Fokusiereigenschaften in der Ebene senkrecht zur Rasterebene

Verfahren und Gerät zur Ionenimplantierung und Oberflächenbehandlung

Vorrichtung zur Erzeugung eines monoenergetischen fokussierten Ionenstrahls

Energy filter assembly for ion implantation system used in fabrication of silicon wafer, has filter elements that are arranged in opening of energy filter which is vibrated vertical to propagation direction of ion beam

The filter assembly has an energy filter (2) that includes an opening (3) for allowing passage of ion beam (1). The radiant energy-absorbing filter elements (4-1-4-3) are arranged in the opening. The dimension of the filter elements vertical to the propagation direction of the ion beam is smaller than the dimension of the opening. The energy filter is vibrated vertical to the propagation direction of the ion beam. An independent claim is included for method for manufacturing energy filter assembly.

VERFAHREN UND VORRICHTUNG ZUR IMPLANTATION MIT IONEN NIEDRIGER ENERGIE

IONENSTRAHLSCHUTZSCHIRM ZUR ANWENDUNG IN IMPLANTIERUNGSANLAGEN

Ionenimplantierungs-Vorrichtungen und -Verfahren

SYSTEM UND METHODE ZUR IONENIMPLANTATION.

ELEKTROSTATISCHE FANGVORRICHTUNG FÜR, IN EINEM IONENSTRAHL MITGEFÜHRTEN TEILCHEN

Anordnung aus Strahlformgerät und Strahlablenkgerät, Strahlablenkverfahren, Ionenimplantationsverfahren und Ionenimplantationssystem

Ionenimplantiervorrichtung

Ionenimplantiervorrichtung, mit: einer Einrichtung (221), um einen Ionenstrahl auf einem Wafer (W) in einer Abtastbewegung zu bewegen, wobei die Abtasteinrichtung (221) den Wafer in einer Zone bewegt, in die ein Ionenstrahl (400) eingestrahlt wird und der Wafer (W) an der Abtasteinrichtung (221) montiert ist; einer Einrichtung (228, 229) zum Detektieren eines Ionenstrahls und zum Detektieren eines Ionenstrahls, der sich über die Ionenstrahlabtasteinrichtung (221) hinaus bewegt, wobei die Detektoreinrichtung (228, 229) benachbart der Ionenstrahl-Abtasteinrichtung (221) fest montiert ist, dadurch gekennzeichnet, dass die Detektoreinrichtung (228, 229) eine geneigte Oberfläche besitzt, so dass ein Teil der Detektoroberfläche benachbart zur Abtasteinrichtung (221) in Strahlrichtung nach bzw. unterhalb der Waferebene angeordnet ist.

Ion implantation beam monitor

As a rotating spoked substrate wheel passes across a beam stop during a scan cycle, a series of pulses are generated by the beam stop. These pulses are analysed to determine characteristics about the ion bam in an implanter.A digital signal processor (DSP) samples the beam stop current at regular intervals. By comparing the magnitude of successive samples, a dose uniformity map may be generated, so that identification of particular substrates on the wheel which have been dosed incorrectly is possible.The time taken for the beam to move between two points during the scan can also be measured from the sampled beam stop current. This provides a measurement of ion beam width. Similarly, by measuring, from the sample beam stop current, the time taken for the ion beam to pass between the middle of two adjacent substrates, the beam height may be ascertained.

Semiconductor device manufacturing apparatus and a method of controlling a semiconductor device manufacturing process

Improved scanning wheel for ion implantation process chamber

ION IMPLANTATION APPARATUS

Ion beam irradiation apparatus

Three axes that are orthogonal to each other at one point are taken as an X-axis, a Y-axis and a Z-axis. An irradiation angle setting motor (14a) holds a holder (4), and sets an irradiation angle r of an ion beam (58) by rotating this holder (4) around a center axis (60) that is parallel to the X-axis. A Y-axis linear motor (20) causes the holder (4) and the irradiation angle setting motor (14a) to ascend and descent in the direction of the Y-axis. A Z-axis linear motor (30) moves the holder (4), the irradiation angle setting motor (14a) and the Y-axis linear motor (20) in the direction of the Z-axis. A control unit (40) operation-controls synchronously the Y-axis linear motor (20) and the Z-axis linear motor (30) so that a substrate holding surface (6) of the holder (4) reciprocates and scans linearly along an S-axis that is parallel to the substrate holding surface (6) and orthogonal to the X-axis. A further embodiment shows the positions of the Y-axis and Z-axis linear motors swapped ...

Ion beam monitoring arrangement

Ion beam generator

Ion implantation method and ion implantation equipment

Ion source assembly

Ion source for ion implantation apparatus

An ionization chamber 32 having a gas inlet port 37 connected to a supply 46 of etchant gas, and an outlet 13 for extracting generated ions. An energy source 33 and 34 is also provided to ionize the etchant gas and thereby form a plasma containing ions, preferably aluminium ions, derived from an ion source body 48 located within the chamber. For the formation of aluminium ions the ion source body comprises aluminium oxide, and the etchant gas is selected from fluorine or sulphur hexafluoride. For other ions the source material may be aluminium nitride, magnesium, indium, pure refractory metals, or oxides and nitrides thereof, while the etchant gas may in addition be nitrogen trifluoride or boron trifluoride. The source material and etchant gas are selected such that no additional ions are created with a similar mass/charge ratio to the selected implantation ions. Also disclosed are various element of source material for supplying implantation ions (see figures 3-8).

Improved method and apparatus for reducing cross contamination of species during ion implantation

An ion implanter with three electrode deceleration structure and upstream mass selection

ION IMPLANTATION

BEAM SCANNING METHOD

METHOD OF MAKING BARRIER LAYER DEVICES AND DEVICES SO MADE

... 1291450 Semi-conductor devices WESTERN ELECTRIC CO Inc 21 Nov 1969 [22 Nov 1968] 56973/69 Heading H1K An insulating guard ring 12 defining the periphery of a planar rectifying barrier in a semiconductor device is formed by bombardment with ions to a depth beyond that of the rectifying barrier so as to convert the bombarded semi-conductor material to insulating material. Suitable ions for use with Si, Ga or III-V compounds are oxygen, nitrogen, carbon or mixtures thereof. The barrier may be a metal/ semi-conductor contact (e.g. Al on Si, Pd on Ge or Au on GaAs) or a contact between Si and a silicide of a metal such as Ni, Ti, Zr, Hf or a Pt-group metal, where the silicide is produced by heating after depositing a layer of the appropriate metal. In the latter case a localized area of the silicide (52), Fig. 5 (not shown), is then covered by a masking layer (54) of metal such as Al, Ti, Zr, Pt-Ti-Au or Cr-Au, and the entire surface is subjected to bombardment, e.g. with oxygen ions, to form ...

APPARATUS FOR THE TREATMENT OF SUBSTRATES BY MEANS OF AN ION BEAM

CHARGED PARTICLE BEAM APPARATUS

... 1516226 Electric discharge apparatus INTERNATIONAL BUSINESS MACHINES CORP 26 Oct 1976 [5 Nov 1975] 44524/76 Heading H1D The beam current in an apparatus for bombarding a target 23 with electrons or ions is measured by providing a conductive wall 10 adjacent but insulated from the target 23 and surrounding the beam so as to form a Faraday cage with the target, the wall 10 being held at substantially ground potential and the target 23 biased at a potential relative to ground opposite in polarity to the incident particles, separate ammeters A being connected to the wall 10 and target 23 so that the sum of the readings gives the total beam current. The chamber defined by walls 10 should be at least nine times the diameter of its entrance aperture, but this can be reduced by applying a transverse magnetic field, Fig. 3 (not shown). The wall 10 can be replaced by a conical wall (41), Fig. 4 (not shown). The apparatus can be used for implanting ions in semi-conductor devices.

MARKING PLASTIC-BASED PRODUCTS

MARKING PLASTIC-BASED PRODUCTS

MARKING PLASTIC-BASED PRODUCTS

DEVICE AND PROCEDURE FOR THE REDUCTION OF THE WAFER LOADING WITH THE ION IMPLANTATION.

ION IMPLANTATION EQUIPMENT, IN WHICH ELECTRICAL LOADING OF SUBSTRATES IS AVOIDED.

Process and apparatus for implanting oxygen ions silicon wafers

IMPROVED METHOD AND APPARATUS FOR REDUCING CROSS CONTAMINATION OF SPECIES DURING ION IMPLANTATION

PROTON ENHANCED DIFFUSION DEVICES AND METHODS

APPARATUS FOR MEASURING THE BEAM CURRENT OF CHARGED PARTICLE BEAM

APPARATUS FOR MEASURING THE BEAM CURRENT OF CHARGED PARTICLE BEAM of the Invention In an ion implantation apparatus, a structure for measuring the beam current at the target wherein a Faraday Cage is formed by walls adjacent to and electrically insulated from the target in combination with the target, means for biasing the target at a negative potential, means for biasing the walls at ground potential and means for measuring the target current and the wall current and for combining the two to provide an accurate beam current measurement.

METHOD AND APPARATUS FOR NEUTRAL BEAM PROCESSING BASED ON GAS CLUSTER ION BEAM TECHNOLOGY

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD

An ion implanting apparatus for irradiating a material, for example, a semiconductor wafer, with an ion beam generated at an ion source, for implanting the ion into the material, is provided with a magnet at a side of the material opposite to a side into which the ion is irradiated. Thereby, the implantation is performed without charging thereon and with a high yielding ratio.

Verfahren zur stellenweisen Veränderung der elektrischen Eigenschaften eines Halbleiterkörpers.

Anordnung zur Behandlung der Oberfläche eines Körpers mit Ionen

Verfahren zum Herstellen eines Halbleitergleichrichters und nach diesem Verfahren hergestellter Halbleitergleichrichter

[...] DE [...] DE SUBSTRATE [...] - [...].

PROCEDURE FOR SCANNING A WORKPIECE WITH A JET OF CHARGED PARTICLES AND DEVICE FOR THE EXECUTION OF THE PROCEDURE.

PROCEDURE AND PLANT FOR EVEN ACCUMULATED ILLUMINATING LEVELS SURFACE WITH A JET OF CHARGED PARTICLES.

PROCEDURE AND DEVICE FOR NEUTRALIZING A POSITIVE A CHARGED ION BEAM.

DEVICE FOR ACCELERATING CHARGED PARTICLES AND ION IMPLANTATION MECHANISM WITH SUCH A DEVICE.

Method of implanting charged ions on a surface of an object to be treated and installation for implementing this method.

L’invention concerne un procédé d’implantation d’ions multichargés sur une surface d’un objet à traiter (30), ce procédé comprenant l’étape qui consiste à diriger vers la surface de l’objet à traiter (30) un faisceau d’ions multichargés (12) produit par une source d’ions multichargés (1) du type à résonance cyclotron électronique ECR, le procédé comprenant également l’étape qui consiste à produire au moins un faisceau d’électrons primaires (28) et à diriger ce faisceau d’électrons primaires (28) de façon qu’il passe à travers le faisceau d’ions multichargés (12). L’invention concerne également une installation (14) pour la mise en œuvre du procédé d’implantation.

Ion implantation process on a surface of an object to be treated and installation for implementing this method.

L’invention concerne un procédé d’implantation d’ions mono- ou multichargés sur une surface d’un objet à traiter (24) placé dans une chambre à vide (20), ce procédé comprenant l’étape qui consiste simultanément: à injecter dans la chambre à vide (20) un faisceau d’ions (30) produit par une source d’ions (26) et à diriger ce faisceau d’ions (30) vers la surface de l’objet à traiter (24), et à éclairer la surface de l’objet à traiter (24) au moyen d’une source de rayonnement ultraviolet (32) produisant un rayonnement ultraviolet (36) qui se propage dans la chambre à vide (20). L’invention concerne également une installation d’implan-tation ionique (18) pour la mise en œuvre du procédé d’implantation.

APPLICATION OF THE MARKING ON PLASTIC PRODUCTS

Ion implantation method and ion implantation apparatus

The invention provides an ion implantation method and an ion implantation apparatus. During ion injection process without using step rotation of a wafer, the non-uniform two-dimensional ion implantation amount in-surface distribution is easily generated in plasma or annealing processes. The ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Multi directional mechanical scanning in an ion implanter

The ion implantation apparatus

For the establishment of the current in the ion implantation of the ribbon-shaped ion beam method and its ion beam system

Method for ion implantation

Silicon implantation in substrates and provision of silicon precursor compositions therefor

For ribbon beam ion beam angle calibration and emittance measuring system

During the photoresist outgassing used for improving the method of implantation uniformity

Electron injection in ion implanter magnets

One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.

PROCEDE ET APPAREIL DE BALAYAGE PAR UN FAISCEAU POUR L'IMPLANTATION IONIQUE

L'INVENTION CONCERNE LA TECHNOLOGIE DES SEMI-CONDUCTEURS. UN GENERATEUR DE BALAYAGE GENERE UN SIGNAL DE BALAYAGE HORIZONTAL BAL X FORME PAR UNE SUCESSION DE RAMPES POSITIVES ET NEGATIVES ALTERNEES ET DE PENTE CONSTANTE, AU MOYEN D'UN INTEGRATEUR 108 ATTAQUE PAR UN SIGNAL CARRE DE FREQUENCE VARIABLE QUI EST FOURNIPAR UN DIVISEUR DE FREQUENCE PROGRAMMABLE 104. LA DUREE DES RAMPES DU SIGNAL DETERMINE LA LONGUEUR DES LIGNES DE BALAYAGE HORIZONTAL ET ELLE EST COMMANDEE SELON UNE SEQUENCE PREDETERMINEE ENREGISTREE DANS UNE MEMOIRE MORTE 132 DE FACON A PRODUIRE N'IMPORTE QUELLE CONFIGURATION DE BALAYAGE PREDETERMINEE, NOTAMMENT UNE CONFIGURATION DE FORME GENERALE CIRCULAIRE CORRESPONDANT A LA FORME ET A LA TAILLE D'UNE TRANCHE DE SEMI-CONDUCTEUR. APPLICATION AUX APPAREILS D'IMPLANTATION IONIQUE.

Implanteur d'ions metalliques

Implanteur metallurgique d'ions metalliques a grande surface emissive, a flux important et a profondeur d'implantation reglable comportant a l'interieur d'une chambre d'implantation maintenue sous vide au moins une source d'ions a arc sous vide 1, 2, 3, 4 dont les ions 5 sont extraits et projetes sur une cible 9 au moyen d'une electrode d'extraction et de focalisation 6, 7 et d'une electrode d'acceleration 8 polarisees respectivement a tres haute et a basse tension. La cible 9 bombardee par la projection ionique emet un flux d'electrons secondaires qui sont repousses par une electrode suppresseuse 10 polarisee negativement par rapport a la cible mise a la masse. Application en metallurgie.

PROCEDE POUR FABRIQUER DES REGIONS IMPLANTEES DANS UN SUBSTRAT

L'invention concerne un procédé pour fabriquer des régions implantées dans un substrat Le substrat 5 est irradié à partir d'une source de rayonnement 1 par deux faisceaux corpusculaires cohérents superposés 14, 15, et disposé de telle manière que des maxima et/ou des minima d'une figure d'interférences (bandes parallèles 7) formée par les deux faisceaux corpusculaires sont situés à la surface 6 dudit substrat, moyennant l'utilisation d'un biprisme 60 subdivisant le faisceau de rayonnement initial 31 pour former les deux faisceaux corpusculaires 14, 15. Application notamment à la fabrication de composants à semi-conducteurs et de circuits intégrés.

ION IMPLANTATION PROCESS

PROCESS AND IONIC DEVICE Of ESTABLISHMENT

High speed ion beam switching arrangement for use in the production of determinate solid body dopings by means of ion implantation

METHOD FOR THE PRODUCTION OF AN ION BEAM HAVING A LARGE CROSS?SECTIONAL AREA

PROCESS AND IONIC DEVICE Of ESTABLISHMENT

PROCESS AND CONTROL DEVICE OF SCANNING SWEEP INTEND TO BE USE FOR the IONIC ESTABLISHMENT

SOURCE Of IONS IN PARTICULAR FOR IONIC IMPLANTEUR

Semiconductor doping - process - by ion bombardment of dopant coating on semiconductor wafer

PROCESS OF ORDERING Of an IONIC IMPLANTEUR IN MODE IMMERSION PLASMA.

La présente invention concerne un procédé de commande d'un implanteur ionique comportant une alimentation plasma AP et une alimentation substrat, cette alimentation substrat comprenant : - un générateur électrique, - un premier interrupteur SW1 raccordé entre le générateur et la borne de sortie de cette alimentation substrat, - un deuxième interrupteur SW2 raccordé entre la borne de sortie et une borne de neutralisation, procédé comportant une phase d'implantation A-D et une phase de neutralisation E-H. Ce procédé comporte de plus une phase de relaxation C-F qui chevauche la phase d'implantation et la phase de neutralisation, phase de relaxation durant laquelle l'alimentation plasma est inactivée.

ACCELERATOR OF BEAM OF PARTICLES

Ion implantation device useful in semiconductor industry, comprises hydrogen source, system for continuously supplying deionized water to source, gas housing, ionization chamber, and unit for detecting abnormality and/or leak of hydrogen

L'invention concerne un dispositif implanteur ionique, dans lequel la source d'hydrogène est un générateur d'hydrogène apte à générer de l'hydrogène à partir d'une réaction chimique ou électrochimique.

CONTROL METHOD FOR A PLASMA IMMERSION IMPLANTER OPERATING IN

La présente invention concerne un procédé de commande pour un implanteur fonctionnant en immersion plasma comportant : - une phase d'implantation [1] durant laquelle le plasma AP est allumé et le substrat est polarisé négativement S, - une phase de neutralisation [2] durant laquelle le plasma AP est allumé et le substrat se voit appliquer une polarisation positive ou nulle S, - une phase de suppression [3] durant laquelle le plasma AP est éteint. Le procédé est remarquable en ce qu'il comporte de plus : - une phase d'expulsion [4] de particules chargées négativement au niveau du substrat durant laquelle le plasma est éteint AP. Ladite invention vise aussi une alimentation de polarisation d'un implanteur.

TECHNIQUE FOR IMPROVING THE PERFORMANCE AND EXTENDING THE LIFETIME OF AN ION SOURCE WITH GAS DILUTION

리본 이온 빔을 위한 질량 분석 자석

... 제1 및 제2 솔레노이드 코일들 및 강철 요크 배열을 가지는 질량 분석기 자석가 개시된다. 각 솔레노이드 코일들은 하나의 리본 이온 빔이 관통하는 공간을 형성하여 실질적으로 '경주 트랙' 모양을 가진다. 상기 솔레노이드 코일들은 리본 이온 빔의 이동 방향을 따라 이격하여 위치한다. 각 솔레노이드 코일들은 하나의 이온 소스로부터 생성된 이온들의 희망하는 이미지를 생산하기 위한 넓은 리본 이온 빔들의 질량 분해를 수용하기 위해 균일한 자기장을 생성한다.

ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY

METHOD OF MEASURING BEAM ANGLE

SYSTEM AND METHOD OF ION NEUTRALIZATION WITH MULTIPLE-ZONED PLASMA FLOOD GUN

이온주입장치 및 이온주입방법

... 메카니컬하게 웨이퍼를 주사하는 웨이퍼 주사영역 길이와, 이온빔의 빔 주사속도를, 동시에 제어하면서 웨이퍼에 이온주입하는 주입방법을, 이온빔에 대한 웨이퍼 회전각을 변경할 때마다 행하고, 이를 웨이퍼 1회전 동안에 복수 회 반복함으로써, 웨이퍼 면내 전체면 영역에 이온주입하면서, 2차원 이온주입량 면내 분포를 실현한다.

다단계 이온 주입

... 사파이어 부품을 강화하기 위한 시스템 및 방법이 여기서 설명된다. 한 실시예는 사파이어 부재의 제1 표면을 이온 주입 디바이스에 관해 배향하고 제1 주입 단계를 수행하는 단계를 포함하는 방법의 형태를 취할 수 있다. 주입 단계는 사파이어 부재의 제1 표면으로 이온들을 지향시켜 이온들을 제1 표면 아래에 임베딩하는 단계를 포함할 수 있다. 이 시스템 및 방법은 또한, 주입된 이온을 사파이어 부재의 더 깊은 층들 내로 확산시키기 위한, 사파이어 부재를 가열하는 단계, 사파이어 부재를 냉각하는 단계, 및 사파이어 부재의 제1 표면으로 이온들을 지향시켜 이온들을 제1 표면 아래에 임베딩하는 적어도 제2 주입 단계를 수행하는 단계 중 하나 이상을 포함할 수 있다.

이온 주입시 비임 각도 측정 방법 및 장치

... 이온 비임 각도 검출 장치는 프로파일러 상판 내에 형성된 프로파일러 구멍 및 프로파일러 센서 조립체를 포함하는 가변 프로파일러 조립체에 고정적으로 부착되는 선형 드라이브 조립체, 및 마스크 구멍을 갖춘 가변 각도 마스크를 포함하며, 상기 가변 프로파일러 조립체에 단단하지 않게 부착되는 가변 각도 마스크 조립체를 포함하며, 상기 마스크 구멍은 상기 가변 프로파일러 조립체에 단단히 부착된 마스크 선형 드라이브를 활성화함으로써 상기 프로파일러 구멍에 대해 이동가능하며, 상기 프로파일러 구멍은 상기 이온 비임의 긴 길이보다 더 긴 길이를 통해 이동가능하다.

HIGH-THROUGHPUT ION IMPLANTER

INSULATION STRUCTURE OF HIGH VOLTAGE ELECTRODE FOR ION IMPLANTING DEVICE

ION IMPLANTING DEVICE AND ION BEAM REGULATING METHOD

The present invention is to realize the improvement of energy accuracy while evading the degradation of the production of an ion implanting device. An energy analysis slit (28) of the ion implanting device comprises a standard slit opening (110) used for an implanting process performed in a given implanting condition, and a high accuracy slit opening (112) which has a higher energy accuracy compared to the standard slit opening (110) and is used to adjust the acceleration parameter of a high frequency linear accelerator. The acceleration parameter is determined based on a given implanting condition, to accelerate at least part of ions supplied to the high frequency linear accelerator with target energy, and also to allow a beam current measured by a beam measurement part to correspond to a target beam current. COPYRIGHT KIPO 2016 ...

Scan Robot for Semiconductor Wafer Ion Implantation

반도체 가공 시스템에서의 이온 공급원 세정법

... 아크 챔버 내의 온도를 적절하게 제어하여 목적하는 필라멘트 성장 또는 대안적 필라멘트 에칭을 수행함에 의해, 아크 챔버의 이온 공급원 내에서 필라멘트의 성장/에칭을 가능케 하는 반응성 세정 시약을 사용하여 이온 주입 시스템 또는 그의 컴포넌트를 세정하는 것이 기재되어 있다. 또한, 주위 온도, 승온 또는 플라즈마 조건 하에 이온 주입기 또는 주입기의 컴포넌트 영역들을 장비내 또는 장비외 세정 설비에서 세정하기 위한, XeFx, WFx, AsFx, PFx 및 TaFx(여기서, x는 화학양론적으로 적절한 값 또는 적절한 범위의 값을 가짐)와 같은 반응성 기체의 용도가 기재되어 있다. 특정 반응성 세정제들 중, BrF3가 장비내 또는 장비외 세정 설비에서 이온 주입 시스템 또는 그의 컴포넌트의 세정에 유용한 것으로 기재되어 있다. 또한, 이온화-관련 침착물의 적어도 일부를 이온 주입 시스템의 포어라인으로부터 제거하기 위해 이온 주입 시스템의 포어라인을 세정하는 방법이 기재되어 있으며, 이는 상기 포어라인을, 상기 침착물과 화학적으로 반응성인 세정 기체와 접촉시키는 단계를 포함한다. 또한, 캐쏘드를 기체 혼합물과 접촉시키는 것을 포함하는, 이온 주입 시스템의 성능 개선 및 수명 연장 방법이 기재되어 있다.

ION BEAM MEASUREMENT APPARATUS AND METHOD

The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased. © KIPO & WIPO 2008 ...

METHODS AND APPARATUS FOR BEAM DENSITY MEASUREMENT IN TWO DIMENSIONS

A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor. © KIPO & WIPO 2009 ...

ION IMPLANTATION APPARATUS AND CONTROL METHOD OF ION IMPLANTATION APPARATUS

Provided is a technology capable of reducing influence of pollution as to a wafer under transport. An ion implantation apparatus (10) comprises: a vacuum processing chamber (16) where ion implantation into a wafer (W) is performed; more than one load lock chambers (54a, 54b) for carrying in the wafer to the vacuum processing chamber (16), and carrying out the wafer from the vacuum processing chamber (16); a middle transport chamber (52) prepared adjacently to both of the vacuum processing chamber (16) and the load lock chambers (54a, 54b); a load lock chamber-middle transport chamber connection hole for connecting the load lock chambers (54a, 54b) and the middle transport chamber (52); a load lock chamber-middle transport chamber connection tools (72a, 72b) having a gate valve capable of sealing the load lock chamber-middle transport chamber connection hole; a middle transport chamber-vacuum processing chamber connection hole for connecting between the middle transport chamber (52) and ...

WEAKENING FOCUSING EFFECT OF ACCELERATION-DECELERATION COLUMN OF ION IMPLANTER

ELECTROSTATIC LENS FOR ION BEAMS

A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends across a width of the ion beam for deflecting ions entering the lens structure. The lens structure includes a first electrode for decelerating ions and a second electrode for accelerating the ions. A lens structure mode controller selectively activates either the accelerating or decelerating electrode to cause ions entering the lens structure to exit said lens structure with a desired trajectory regardless of the trajectory ions enter the lens structure. © KIPO & WIPO 2007 ...

Ion implantation system with beam angle control in drift and deceleration modes

ION SOURCE

Integrated Shadow Mask/Carrier for Pattern Ion Implantation

An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.

Ion implantation method and ion implanter

An ion implantation method and an ion implanter with a beam profiler are proposed in this invention. The method comprises setting scan conditions, detecting the ion beam profile, calculating the dose profile according to the detected ion beam profile and scan conditions, determining the displacement for ion implantation and implanting ions on a wafer surface. The ion implanter used the beam profiler to detect the ion beam profile, calculate dose profile and determine the displacement and used the displacement in ion implantation for optimizing, wherein the beam profiler comprises a body with ion channel and detection unit behind the ion channel in the body for beam profile detection. The beam profiler may be a 1-dimensional, 2-dimensional or angle beam profiler.

Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process

Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.

Method for extending lifetime of an ion source

This invention relates in part to a method for preventing or reducing the formation and/or accumulation of deposits in an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The method involves introducing into the ionization chamber a dopant gas, wherein the dopant gas has a composition sufficient to prevent or reduce the formation of fluorine ions/radicals during ionization. The dopant gas is then ionized under conditions sufficient to prevent or reduce the formation and/or accumulation of deposits on the interior of the ionization chamber and/or on the one or more components contained within the ionization chamber. The deposits adversely impact the normal operation of the ion implanter causing frequent down time and reducing tool utilization.

Ion implantation system and method

An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

System and method for producing a mass analyzed ion beam for high throughput operation

A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.

Method to modify the shape of a cavity using angled implantation

A method of modifying a shape of a cavity in a substrate. The method includes forming one or more cavities on a surface of the substrate between adjacent relief structures. The method also includes directing ions toward the substrate at a non-normal angle of incidence, wherein the ions strike an upper portion of a cavity sidewall, and wherein the ions do not strike a lower portion of the cavity sidewall. The method further includes etching the one or more cavities wherein the upper portion of a cavity sidewall etches more slowly than the lower portion of the sidewall cavity.

Method for treating a surface of a polymeric part by multi-energy ions

A treatment method for treating at least one surface of a solid polymer part wherein multi-energy ions X + and X 2+ are implanted simultaneously, where X is the atomic symbol selected from the list constituted by helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), and wherein the ratio RX, where RX=X + /X 2+ , with X + and X 2+ expressed as atomic percentages, is less than or equal to 100, for example less than 20. This results in very significant reductions in the surface resistivity of the parts treated in this way, the appearance of antistatic properties or of electrostatic charge dissipation properties. By way of example, the ions X + and X 2+ are supplied by an ECR source.

Endpoint determination for capillary-assisted flow control

Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluidutilizing apparatus such as ion implanters.

Automatic Control System for Selection and Optimization of Co-Gas Flow Levels

An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.

Solar cell, solar cell manufacturing device, and method for manufacturing the same

A solar cell, a solar cell manufacturing device, and a method for manufacturing the solar cell are discussed. The solar cell manufacturing device includes a chamber; an ion implantation unit configured to implant ions into a substrate inside the chamber and a mask positioned between the ion implantation unit and the substrate. The mask includes a first opening to form a lightly doped region having a first concentration at one surface of the substrate, a second opening to form a heavily doped region having a second concentration higher than the first concentration at the one surface of the substrate, and at least one connector formed to cross the second opening. The second opening includes finger openings formed in a first direction, and bus openings formed in a second direction crossing the first direction.

Ion implantation method, carrier, and ion implantation device

An ion implantation method includes: placing, in an atmosphere, a mask, which is used in conjunction with a tray for accommodating a substrate for a solar cell, at a first position covering a partial area on a surface of the substrate while maintaining the mask aligned relative to the substrate or at a second position distanced from the surface of the substrate; implanting, in a vacuum, ions in a first area on the surface of the substrate while the mask is placed at the first position; and implanting, in a vacuum, ions in a second area on the surface of the substrate while the mask is placed at the second position.

PLATEN CLAMPING SURFACE MONITORING

An ion implanter includes a platen having a clamping surface configured to support a wafer for treatment with ions, the platen also having at least one pair of electrodes under the clamping surface, a clamping power supply configured to provide an AC signal to the at least one pair of electrodes and a sensed signal representative of the AC signal, and a controller. The controller is configured to receive the sensed signal from the clamping power supply when no wafer is clamped to the clamping surface. The controller is further configured to monitor the sensed signal and determine if the sensed signal is representative of deposits on the clamping surface exceeding a predetermined deposit threshold. 1. An ion implanter comprising:a platen having a clamping surface configured to support a wafer for treatment with ions, the platen also having at least one pair of electrodes under the clamping surface;a clamping power supply configured to provide an AC signal to the at least one pair of electrodes and a sensed signal representative of the AC signal; anda controller configured to receive the sensed signal from the clamping power supply when no wafer is clamped to the clamping surface, the controller further configured to monitor the sensed signal and determine if the sensed signal is representative of deposits on the clamping surface exceeding a predetermined deposit threshold.2. The ion implanter of claim 1 , wherein the controller is further configured to determine if the sensed signal is representative of deposits on the clamping surface exceeding the predetermined deposit threshold by analyzing if an amplitude of a current level of the AC signal exceeds a predetermined amplitude threshold when no wafer is clamped to the clamping surface.3. The ion implanter of claim 2 , wherein the predetermined amplitude threshold is 2.5 mA peak to peak.4. The ion implanter of claim 2 , wherein the controller is further configured to initiate a sputter clean process of the clamping ...

METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORMATION OF MOS DEVICES

An apparatus for implanting ions of a selected species into a semiconductor wafer includes an ion source, an accelerator, and an magnetic structure. The ion source is configured to generate an ion beam. The accelerator is configured to accelerate the ion beam, where the accelerated ion beam includes at least a first portion having a first energy and a second portion having a second energy. The magnetic structure is configured to deflect the first portion of the accelerated ion beam in a first path trajectory and the second portion of the accelerated ion beam in a second path trajectory. The first and second path trajectories have a same incident angle relative to a surface region of the semiconductor wafer. 1. An apparatus for implanting ions of a selected species into a semiconductor wafer comprising:an ion source configured to generate an ion beam;an accelerator configured to accelerate the ion beam, where the accelerated ion beam includes at least a first portion having a first energy and a second portion having a second energy; andan magnetic structure configured to deflect the first portion of the accelerated ion beam in a first path trajectory and the second portion of the accelerated ion beam in a second path trajectory;wherein the first and second path trajectories have a same incident angle relative to a surface region of the semiconductor wafer.2. The apparatus of wherein the first path trajectory includes a first path angle and the second path trajectory includes a second path angle claim 1 , wherein the first path angle is greater than the second path angle.3. The apparatus of wherein the same incident angle is perpendicular to the surface of the semiconductor wafer.4. The apparatus of wherein the first energy is greater than the second energy.5. The apparatus of wherein the magnetic structure is configured to:concurrently deflect the first accelerated ion portion into a first path trajectory having a first deflected angle and the second accelerated ion ...

System and method of ion neutralization with multiple-zoned plasma flood gun

An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.

System and Method for Aligning Substrates for Multiple Implants

A system and method are disclosed for aligning substrates during successive process steps, such as ion implantation steps, is disclosed. Implanted regions are created on a substrate. After implantation, an image is obtained of the implanted regions, and a fiducial is provided on the substrate in known relation to at least one of the implanted regions. A thermal anneal process is performed on the substrate such that the implanted regions are no longer visible but the fiducial remains visible. The position of the fiducial may be used in downstream process steps to properly align pattern masks over the implanted regions. The fiducial also may be applied to the substrate before any ion implanting of the substrate is performed. The position of the fiducial with respect to an edge or a corner of the substrate may be used for aligning during downstream process steps. Other embodiments are described and claimed.

ION IMPLANTATION METHOD AND ION IMPLANTER

An ion implantation method and an ion implanter with a beam profiler are proposed in this invention. The method comprises setting scan conditions, detecting the ion beam profile, calculating the dose profile according to the detected ion beam profile and scan conditions, determining the displacement for ion implantation and implanting ions on a wafer surface. The ion implanter used the beam profiler to detect the ion beam profile, calculate dose profile and determine the displacement and used the displacement in ion implantation for optimizing, wherein the beam profiler comprises a body with ion channel and detection unit behind the ion channel in the body for beam profile detection. The beam profiler may be a 1-dimensional, 2-dimensional or angle beam profiler. 1. An ion implantation method comprising:a. detecting an ion beam profile;b. calculating a plurality of dose profiles and a plurality of dose uniformities according to a plurality of simulated implantations simulated with at least a pitch on a simulated wafer by using the ion beam profile, wherein each one of the simulated implantations has n simulated implants with n orientations averagely arranged around 360°, the nth simulated implant has a plurality of nth simulated implant lines perpendicular to the nth orientation and a nth displacement equal to a distance between a center of a surface of the simulated wafer and the one of the nth simulated implant lines nearest to the center, and n is a positive integer;c. determining a nth optimized displacement from all of the nth displacements of all of the simulated implantations according to the calculation;d. shifting a wafer to meet the nth optimized displacement;e. forming a nth implant with the nth optimized displacement on a surface of the wafer;f. rotating the wafer at an 360/n angle; andg. repeating the steps (c) to (f) n−1 times to finish an implantation.2. The ion implantation method according to claim 1 , wherein a beam profiler is used in detecting ...

Method and apparatus for cleaning residue from an ion source component

Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed.

Inert Atmospheric Pressure Pre-Chill and Post-Heat

An ion implantation system provides ions to a workpiece positioned in a process environment of a process chamber on a sub-ambient temperature chuck. An intermediate chamber having an intermediate environment is in fluid communication with an external environment and has a cooling station and heating station for cooling and heating the workpiece. A load lock chamber is provided between the process chamber and intermediate chamber to isolate the process environment from the intermediate environment. A positive pressure source provides a dry gas within the intermediate chamber at dew point that is less than a dew point of the external environment to the intermediate chamber. The positive pressure source isolates the intermediate environment from the external environment via a flow of the dry gas from the intermediate chamber to the external environment.

Inductively coupled plasma flood gun using an immersed low inductance rf coil and multicusp magnetic arrangement

An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.

ION IMPLANTATION APPARATUS

A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler. 1. An ion implantation apparatus that moves a substrate in a direction that intersects the short-side direction of a ribbon-like ion beam in a processing chamber to thereby irradiate the ion beam over the entire surface of the substrate , comprising:shaping masks that shape the two edges of the ion beam in the short-side direction prior to irradiation of the ion beam on the substrate;a profiler that measures the current distribution in the long-side direction of the ion beam shaped by the shaping masks andan electron beam supply unit that supplies an electron beam for the ion beam across the entire region in the long-side direction of the ion beam on the upstream side of the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam at each location in the long-side direction of the ion beam according to results of measurements by the profiler.2. The ion implantation apparatus according to claim 1 , wherein the electron beam supply unit comprises: an electron beam generating apparatus claim 1 , which generates the electron beam claim 1 , and at least one of an electron beam scanning apparatus claim 1 , which scans the electron beam generated by the electron beam generating apparatus in one direction claim 1 , and a current distribution adjusting apparatus claim 1 , which adjusts ...

ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of BF. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use. 1. A process system , comprising:a process tool;a first boron precursor source configured to supply a first boron precursor to the process tool; anda second boron precursor source configured to supply a second boron precursor to the process tool concurrently with the first boron precursor,{'sub': 2', '4, 'wherein the first boron precursor source comprises BFand the second boron precursor source comprises diborane.'}2. The process system of claim 1 , wherein the process tool comprises an ion implantation apparatus.3. The process system of claim 1 , comprising a co-flow feed line for introducing co-flowed first and second boron precursors to the process tool claim 1 , where each of the first boron precursor source and second boron precursor source comprises a precursor supply vessel coupled in flow communication to the co-flow feed line.4. The process system of claim 1 , wherein the process tool comprises a boron doping ion implantation apparatus disposed in a manufacturing facility configured to produce product articles claim 1 , assemblies claim 1 , or subassemblies claim 1 , comprising boron doped material.5. The process system of claim 4 , wherein the manufacturing facility is configured to produce semiconductor product articles claim 4 , assemblies claim 4 , or subassemblies claim 4 , comprising doped boron material.6. The process system of claim 4 , wherein the ...

Method and apparatus for thermal control of ion sources and sputtering targets

A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.

Textured Silicon Liners In Substrate Processing Systems

Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

ION BEAM MEASURING DEVICE AND METHOD OF MEASURING ION BEAM

An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position. 1. An ion beam measuring device comprising:a mask that is used for shaping an original ion beam into a measuring ion beam comprising a y beam part elongated in a y direction that is perpendicular to an ion beam traveling direction and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction;a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; anda beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.2. The ion beam measuring device according to claim 1 ,wherein the original ion beam is an ion beam scanned over a scanning range that is in the x direction and has a width in the x direction longer than a width in the y direction or an ion beam that has a width in the x direction longer than a width in the y direction,wherein the mask comprises a plurality of first mask parts and a plurality of second mask parts in an irradiated region on the mask on which the original ion beam is incident,wherein each of the plurality of first mask parts comprises at least one y slit that corresponds to the y beam part,wherein each of the plurality of second mask parts ...

Semiconductor Workpiece Temperature Measurement System

An improved system and method of measuring the temperature of a workpiece being processed is disclosed. The temperature measurement system determines a temperature of a workpiece by measuring the amount of expansion in the workpiece due to thermal expansion. The amount of expansion may be measured using a number of different techniques. In certain embodiments, a light source and a light sensor are disposed on opposite sides of the workpiece. The total intensity of the signal received by the light sensor may be indicative of the dimension of the workpiece. In another embodiment, an optical micrometer may be used. In another embodiment, a light sensor may be used in conjunction with a separate device that measures the position of the workpiece. 1. A temperature measurement system , comprising:a carrier to transport a workpiece;light arrays disposed on either side of the carrier;light sensors in alignment with the light arrays, such that the workpiece passes between the light arrays and the light sensors; anda controller, in communication with the light sensors, configured to receive an output from the light sensors while the workpiece is transported by the carrier, and based on the output from the light sensor, to determine a temperature of the workpiece.2. The temperature measurement system of claim 1 , wherein the controller compares the output from the light sensor to a predetermined value to determine a change in a dimension of the workpiece claim 1 , and uses a coefficient of thermal expansion of the workpiece to determine the temperature of the workpiece.3. The temperature measurement system of claim 1 , wherein the controller compares the output from the light sensor to an initial value measured at an initial temperature to determine a change in a dimension of the workpiece claim 1 , and uses a coefficient of thermal expansion of the workpiece to determine the temperature of the workpiece.4. The temperature measurement system of claim 1 , wherein the output ...

Ion Beam Line

In one aspect, an ion implantation system is disclosed, which comprises a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, and an electrostatic bend disposed downstream of the deceleration system for causing a deflection of the ion beam. The electrostatic bend includes three tandem electrode pairs for receiving the decelerated beam, where each electrode pair has an inner and an outer electrode spaced apart to allow passage of the ion beam therethrough. Each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the middle electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the middle electrode pair. 1. An ion implantation system , comprising:a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2,an electrostatic bend disposed downstream of said deceleration system for causing a deflection of the ion beam,said electrostatic bend comprising:a first electrode pair disposed downstream of the deceleration system for receiving said decelerated beam, said first electrode pair having an inner and an outer electrode spaced apart to allow passage of the ion beam therebetween,a second electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow the passage of the ion beam therebetween, andan end electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow the passage of the ion beam therebetween,wherein said electrode pairs are configured to be independently biased.2. The ion implantation system of claim 1 , wherein each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at ...

GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement

A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam. 1. A method of generating an argon ion beam , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; andextracting argon ions from the ion source to form the argon ion beam, wherein a flow rate of germane is between 0.35 and 1.00 sccm.2. The method of claim 1 , wherein the ion source comprises an indirectly heated cathode ion source.3. The method of claim 1 , wherein the ion source comprises an RF ion source.4. The method of claim 1 , wherein the ion source comprises a Bernas source claim 1 , a capacitively coupled plasma source claim 1 , an inductively coupled source claim 1 , or a microwave coupled plasma source.5. The method of claim 1 , wherein no halogen gasses are introduced into the ion source.6. The method of claim 1 , wherein the ion source is a component of a beam-line implantation system.7. A method of generating an argon ion beam claim 1 , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; and extracting argon ions from the ion source to form the argon ion beam,wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 10% relative to an argon ion beam generated without use of germane at a same extraction current.8. The method of claim 7 , wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 15% relative to the argon ion beam generated without use of germane at a same extraction current.9. The method of claim 7 , wherein no halogen gasses ...

Conductive beam optic containing internal heating element

Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.

ENERGY FILTER ELEMENT FOR ION IMPLANTATION SYSTEMS FOR THE USE IN THE PRODUCTION OF WAFERS

A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam. 1implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device, the implantation device comprising a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, andwherein the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.. A method of doping a wafer, comprising: The present application is a Continuation of U.S. patent application Ser. No. 17/036,966, filed on Sep. 29, 2020, which is a Continuation of U.S. patent application Ser. No. 16/090,521, filed on Oct. 1, 2018, which is a 371 of International application PCT/EP2017/058018, filed April 4, 2017, which claims priority of DE 10 2016 106 119.0, filed Apr. 4, 2016. The priority of these applications is hereby claimed and these applications are incorporated herein by reference.The invention relates to an implantation arrangement comprising an energy filter (implantation filter) for ion implantation and its use and to an implantation method.By means of ion implantation, it is possible to achieve the doping or production of defect profiles, in any desired material such as semiconductor material (silicon, silicon carbide, gallium nitride) or optical material (LiNbO) with predefined depth profiles in the depth range of a few nanometers to several 100 micrometers. It is desirable in particular to produce depth profiles which are characterized by a wider depth distribution than that of a doping ...

BEAM TRANSMISSION SYSTEM AND METHOD THEREOF

A beam current transmission system and method are disclosed. The beam current transmission system comprises an extraction device, a mass analyzer, a divergent element, a collimation element and a speed change and turning element, wherein an analysis plane of the mass analyzer is perpendicular to a convergent plane of the extracted beam, and after entering an entrance, the beam is converged on a convergent point in a plane perpendicular to the analysis plane, and then is diverged from the convergent point and transmitted to the divergent element from an exit; the collimation element is used for parallelizing the beam in a transmission plane of the beam; and the speed change and turning element is used for enabling the beam to change speed so as to achieve a target energy while the beam is deflected so that the transmission direction of the beam changes by a first pre-set angle. Through the coordinated cooperation among a plurality of beam current optical elements, a relatively wider distribution can be formed in a vertical plane, so the invention is suitable to the processing of a wafer with a large size and also ensure better injection uniformity on the premise of avoiding energy contamination. 1. A beam transmission system , comprising an ion source and an extraction device , wherein the extraction device is for extracting a focused beam , the beam transmission system further including: a mass analyzer , a divergent element , a collimation element and a speed change and turning element provided next to the collimation element , the mass analyzer includes an entrance and an exit , wherein an analysis plane of the mass analyzer is perpendicular to a convergent plane of the extracted beam ,the mass analyzer is used for deflecting the beam in the analysis plane so that trajectories of ion beams with different mass-to-charge ratios are formed in the analysis plane, and after entering the entrance, the beam is converged on a convergent point in a plane perpendicular to ...

ION IMPLANTER AND METHOD OF CONTROLLING THE SAME

An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal. 1. An ion implanter comprising:a high-voltage power supply;a control unit that generates a command signal controlling an output voltage of the high-voltage power supply;an electrode unit to which the output voltage is applied; anda measurement unit that measures an actual voltage applied to the electrode unit,whereinthe control unit includes:a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage;a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes the target voltage or a voltage close to the target voltage; anda command section that brings to the high-voltage power supply a synthetic command signal which is produced by synthesizing the first command signal and the second command signal.2. The ion implanter according to claim 1 , whereineach of the first generation section and the second generation section includes a D/A (Digital to Analog) converter that converts a digital command value into an analog command ...

ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of BF. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use. 1. A method for enhancing operation of an ion implantation system , comprising providing for use in the ion implantation system a gas storage and dispensing vessel holding boron precursor comprising two or more boron atoms and at least one fluorine atom , wherein the boron precursor is isotopically-enriched in at least one boron isotope.2. The method of claim 1 , wherein the isotopically-enriched boron precursor comprises BF.3. The method of claim 2 , wherein said BFis isotopically enriched in B.4. The method of claim 2 , wherein said BFis isotopically enriched in B.5. The method of claim 1 , wherein the ion implantation system comprises a beamline ion implanter.6. The method of claim 5 , wherein enhancing operation of the ion implantation system comprises at least one of increased beam current claim 5 , increased ion source life claim 5 , reduced levels of deposits in the ion implantation system claim 5 , and reduced clogging of flow passages in the ion implantation system.7. The method of claim 1 , wherein the gas storage and dispensing vessel holds a storage medium for the boron precursor.8. The method of claim 7 , wherein the storage medium comprises material selected from the group consisting of physical adsorbents and ionic liquids.9. The method of claim 7 , wherein the storage medium comprises physical adsorbent.10. The method of claim 1 , wherein the gas storage and ...

BLANKING APERTURE ARRAY, METHOD FOR MANUFACTURING BLANKING APERTURE ARRAY, AND MULTI-CHARGED PARTICLE BEAM WRITING APPARATUS

In one embodiment, a blanking aperture array is for a multi-charged particle beam writing apparatus. The blanking aperture array includes a substrate and a plurality of blankers. Each of the plurality of blankers includes a blanking electrode and a ground electrode that are formed on a first surface of the substrate. The plurality of blankers includes at least a normal blanker which is capable of applying a predetermined voltage between the blanking electrode and the ground electrode and for which a through hole bored through the substrate is formed, and a defective blanker which is not capable of applying the predetermined voltage between the blanking electrode and the ground electrode and for which the through hole bored through the substrate is filled with a beam shield. 1. A blanking aperture array for a multi-charged particle beam writing apparatus , the blanking aperture array comprising:a substrate; anda plurality of blankers, each of the plurality of blankers including a blanking electrode and a ground electrode that are formed on a first surface of the substrate, a normal blanker which is capable of applying a predetermined voltage between the blanking electrode and the ground electrode and for which a through hole bored through the substrate is formed, and', 'a defective blanker which is not capable of applying the predetermined voltage between the blanking electrode and the ground electrode and for which the through hole bored through the substrate is filled with a beam shield., 'wherein the plurality of blankers includes at least'}2. The blanking aperture array according to claim 1 ,wherein, for the defective blanker, a recess is disposed on the first surface of the substrate, andwherein a substrate body between a bottom surface of the recess and a second surface of the substrate serves as the beam shield.3. The blanking aperture array according to claim 1 ,wherein the beam shield contains a heavy metal.4. The blanking aperture array according to claim 3 ...

Porous carbonaceous vacuum chamber liners

Described are porous protective liners for use in a vacuum chamber, the liners being made of inorganic carbonaceous material and having a porous surface, preferably with the pores being of an open-pore structure.

IN-SITU PLASMA CLEANING OF PROCESS CHAMBER COMPONENTS

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component. 1. An ion implantation system , comprising:an ion source configured to form an ion beam;a beam-line component; anda gas source configured to supply a gas to the beam-line component,wherein the gas source is configured to etch a deposit residing on a surface of the beam-line component via a reaction of the deposit with the gas.2. The ion implantation system of claim 1 , wherein the gas source comprises an etchant gas.3. The ion implantation system of claim 1 , wherein the beam-line component is an electrostatic filter (EF).4. The ion implantation system of claim 1 , wherein the gas source is configured to supply the gas to a chamber portion of the beam-line component.5. The ion implantation system of claim 1 , wherein the gas comprises atomic or molecular species containing H claim 1 , He claim 1 , N claim 1 , O claim 1 , F claim 1 , Ne claim 1 , Cl claim 1 , Ar claim 1 , Kr claim 1 , and Xe claim 1 , or combinations thereof.6. The ion implantation system of claim 1 , wherein the gas comprises NF claim 1 , O claim 1 , a mixture of Ar and F claim 1 , or combinations thereof.7. The ion implantation system of claim 1 , the gas source is configured ...

TOXIC OUTGAS CONTROL POST PROCESS

A workpiece processing system has a cooling chamber enclosing a chamber volume. A workpiece support within the cooling chamber supports a workpiece having a material with an outgassing temperature, above which, the material outgases an outgas material at an outgassing rate that is toxic to personnel. A cooling apparatus selectively cools the workpiece to a predetermined temperature. A vacuum source and purge gas source selectively evacuates and selectively provides a purge gas to the chamber volume. A controller controls the cooling apparatus to cool the workpiece to the predetermined temperature, where the one or more materials are cooled below the outgassing temperature. The vacuum source and purge gas source are controlled to provide a predetermined heat transfer rate while removing the respective outgas material from the chamber volume. 1. A workpiece processing system , comprising:a cooling chamber generally enclosing a chamber volume;a workpiece support positioned within the cooling chamber and configured to selectively support a workpiece having one or more materials residing thereon, wherein each of the one or more materials has a respective outgassing temperature associated therewith, above which, the one or more materials outgas a respective outgas material at a respective outgassing rate that is toxic to personnel;a cooling apparatus configured to selectively cool the workpiece to a predetermined temperature; anda vacuum source configured to selectively evacuate the chamber volume;a purge gas source configured to selectively provide a purge gas to the chamber volume;a controller configured to cool the workpiece to the predetermined temperature via a control of the cooling apparatus, thereby cooling the one or more materials to below the respective outgassing temperature, and wherein the controller is further configured to control the vacuum source and purge gas source to provide a predetermined pressure associated with a predetermined heat transfer rate ...

METHODS FOR INCREASING BEAM CURRENT IN ION IMPLANTATION

The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source. 1. A method of increasing a beam current for implanting a non-carbon target ionic species , comprising the steps of:introducing a dopant source into an ion implanter from a delivery container;introducing an assistant species into the ion implanter from the delivery container, said assistant species comprising:(i) a lower ionization energy in comparison to an ionization energy of the dopant source;{'sup': '2', '(ii) a total ionization cross-section (TICS) greater than 2 Å;'}(iii) a ratio of bond dissociation energy (BDE) of a weakest bond of the assistant species to the lower ionization energy of the assistant species to be 0.2 or higher; and(iv) an absence of the non-carbon target ionic species;ionizing the assistant species to produce ions of the assistant species;the dopant source interacting with the assistant species whereby the dopant source undergoes assistant species ion-assisted ionization;forming a plasma containing ions;extracting a beam of the ions from the ion implanter;separating the ions to isolate non-carbon target ionic species;producing the beam current of the non-carbon target ionic species that is higher in comparison to that generated solely from the dopant source; andimplanting the non-carbon target ionic species into a substrate.2. The method of claim 1 , wherein the dopant source is in a concentration higher than that of the assistant species.3. The method of claim 1 , further comprising introducing a diluent gas into the ion implanter.4. The method of claim 1 , further comprising:operating at a predetermined arc ...

CARBON DOPANT GAS AND CO-FLOW FOR IMPLANT BEAM AND SOURCE LIFE PERFORMANCE IMPROVEMENT

Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

PARTICLE YIELD VIA BEAM-LINE PRESSURE CONTROL

A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period. 1. A method of operating a beamline ion implanter , comprising:performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter; 'introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beamline for a second time period; and', 'performing a first pressure-control routine during a second time period byafter completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.2. The method of claim 1 , wherein the predetermined gas is nitrogen claim 1 , Ar claim 1 , Kr claim 1 , Xe claim 1 , H claim 1 , air claim 1 , water vapor claim 1 , a reactive gas claim 1 , CH claim 1 , CHF claim 1 , or combination thereof.3. The method of claim 1 , the performing the first pressure-control routine comprising introducing the predetermined gas into the process chamber.4. The method of claim 1 , wherein the first pressure-control routine is initiated when a threshold is exceeded.5. The method of claim 4 , wherein the threshold comprises a defect threshold claim 4 , wherein a substrate defect level is monitored in the process chamber claim 4 , and wherein the first pressure-control routine is initiated when the defect threshold is exceeded.6. The ...

INSULATOR FOR AN ION IMPLANTATION SOURCE

An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source. 1. An insulator for an ion implantation source , comprising: a first plurality of guide walls,', 'a first plurality of channels formed by the first plurality of guide walls,', 'a core member; and, 'a first portion, comprising a second plurality of guide walls, and', 'wherein a combination of the first plurality of guide walls, the first plurality of channels, the second plurality of guide walls, and the second plurality of channels form a third channel to the core member when the core member is at least partially inserted into the second portion.', 'a second plurality of channels formed by the second plurality of guide walls,'}], 'a second portion, comprising2. The insulator of claim 1 , wherein the first plurality of guide walls are a first plurality of concentric guide walls;wherein the first plurality of channels are a first plurality of concentric channels;wherein the second plurality of guide walls are a second plurality of concentric guide walls; andwherein the second plurality of channels are a second plurality of concentric channels.3. The insulator of claim 1 , wherein the third channel is formed when at least a subset of the first plurality of guide walls are at least partially inserted into at least a ...

ION IMPLANTATION SYSTEM AND LINEAR ACCELERATOR HAVING NOVEL ACCELERATOR STAGE CONFIGURATION

An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy. The linear accelerator may include a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises: a drift tube assembly, arranged to conduct the ion beam; a resonator, electrically coupled to the drift tube assembly; and an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator. As such, the given acceleration stage does not include a quadrupole element. 1. An ion implantation system , comprising:an ion source and extraction system, arranged to generate an ion beam at a first energy; and a drift tube assembly, arranged to conduct the ion beam;', 'a resonator, electrically coupled to the drift tube assembly; and', 'an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator, wherein the given acceleration stage does not include a quadrupole element., 'a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy, wherein the linear accelerator comprises a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises2. The ion implantation system of claim 1 , the linear accelerator comprising at least three acceleration stages.3. The ion implantation system of claim 1 , wherein the plurality of acceleration stages do not include a quadrupole element.4. The ion implantation system of claim 1 , wherein the drift tube assembly comprises a first grounded drift tube claim 1 , an AC drift ...

IN-SITU HIGH POWER IMPLANT TO RELIEVE STRESS OF A THIN FILM

Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached. 1. A method of processing a substrate , comprising:depositing a carbon hardmask over a substrate, wherein the carbon hardmask is deposited by applying a radio frequency (RF) bias to an electrostatic chuck upon which the substrate is positioned to generate a plasma; andwhile deposing the carbon hardmask over the substrate, implanting ions from the plasma into the carbon hardmask using the RF bias, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are simultaneously performed in the same process chamber.2. The method of claim 1 , wherein depositing the carbon hardmask is performed by applying a first RF bias having a first power level to the electrostatic chuck via a first electrode disposed in the electrostatic chuck.3. The method of claim 2 , wherein the first RF bias is in a range from about 1 Kilowatts to about 15 Kilowatts at a frequency of about 0.4 MHz to about 300 MHz.4. The method of claim 2 , wherein implanting ions from the plasma into the carbon hardmask includes:depositing the carbon hardmask over a film stack;discontinuing a flow of a hydrocarbon-containing gas for forming the carbon hardmask; andreducing the first power level to a second power level that is sufficient to sustain plasma in the process ...

ELECTROSTATIC ELEMENT HAVING GROOVED EXTERIOR SURFACE

Provided herein are approaches for increasing surface area of a conductive beam optic by providing grooves or surface features thereon. In one approach, the conductive beam optic may be part of an electrostatic filter having a plurality of conductive beam optics disposed along an ion beam-line, wherein at least one conductive beam optic includes a plurality of grooves formed in an exterior surface. In some approaches, a power supply may be provided in communication with the plurality of conductive beam optics, wherein the power supply is configured to supply a voltage and a current to the plurality of conductive beam optics. The plurality of grooves may be provided in a spiral pattern along a length of the conductive beam optic, and/or oriented parallel to a lengthwise axis of the conductive beam optic. 1. An ion implantation system , comprising:an electrostatic filter (EF) within a chamber of the ion implantation system, the EF including a conductive beam optic having a plurality of grooves formed in an exterior surface; anda power supply in communication with the EF, the power supply configured to supply a voltage and a current to the conductive beam optic.2. The ion implantation system of claim 1 , the power supply configured to supply the voltage and the current to the conductive beam optic during a processing mode.3. The ion implantation system of claim 1 , wherein each of the plurality of grooves extends into the conductive beam optic to a uniform depth.4. The ion implantation system of claim 1 , wherein the plurality of grooves are arranged in a helical pattern along a length of the conductive beam optic.5. The ion implantation system of claim 1 , wherein each of the plurality of grooves is approximately v-shaped.6. The ion implantation system of claim 1 , wherein the plurality of grooves are uniformly spaced apart from one another.7. The ion implantation system of claim 1 , further comprising a plurality of conductive beam optics.8. A method comprising: ...

HIGH-CURRENT ION IMPLANTER AND METHOD FOR CONTROLLING ION BEAM USING HIGH-CURRENT ION IMPLANTER

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens. 1. An ion implantation system , comprising:an electrostatic lens receiving an ion beam, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line; anda power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.2. The ion implantation system of claim 1 , further comprising a plasma flood gun positioned between the electrostatic lens and a wafer claim 1 , wherein the plasma flood gun and the wafer are oriented at an angle relative to the ion beam line.3. The ion implantation system of claim 2 , wherein the wafer is grounded claim 2 , and wherein a mass analyzer and a collimator along the ion beam line are at a positive potential.4. The ion implantation system of claim 3 , wherein the ...

ION IMPLANTER AND ION IMPLANTATION METHOD

An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process. 1. An ion implanter comprising:an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed;a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process;a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup; anda blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.2. The ion implanter according to claim 1 ,wherein the first Faraday cup is movable between a first measurement position and a first retreat position in a first direction perpendicular to a beam traveling ...

ION IMPLANTATION SYSTEM WITH MIXTURE OF ARC CHAMBER MATERIALS

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance. 1. An ion implantation system for implanting one or more ionic species into a substrate , the system comprising:a gas source comprising an ionizable gas or gas mixture containing at least one ionizable gas; andan arc chamber comprising at least a first arc chamber material and a second arc chamber material, wherein the first and second arc chamber materials are different,wherein the arc chamber comprises arc chamber walls having interior-plasma facing surfaces and at least one of one or more arc chamber liners, a sputtering target disposed in the arc chamber, or a combination thereof, wherein the first and second arc chamber materials are present in the arc chamber walls, in the one or more arc chamber liners disposed in the arc chamber, a target disposed in the arc chamber, or a combination thereof.2. The system of claim 1 , wherein the arc chamber walls comprise the first arc chamber material claim 1 , the first arc chamber material comprising tungsten claim 1 , and wherein the second arc chamber material includes any one of boron claim 1 , boron nitride claim 1 , boron oxide claim 1 , tungsten boride claim 1 , or boron carbide.3. The system of claim 2 , wherein the second arc chamber material is coated onto or surface graded into claim 2 , a ...

Ion generator and ion implanter

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

Selective Processing Of A Workpiece

Systems and methods for the selective processing of a particular portion of a workpiece are disclosed. For example, the outer portion may be processed by directing an ion beam toward a first position on the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two first locations. The workpiece is then rotated relative to the ion beam about its center so that certain regions of the outer portion are exposed to the ion beam. The workpiece is then moved relative to the ion beam to a second position and rotated in the opposite direction so that all regions of the outer portion are exposed to the ion beam. This process may be repeated a plurality of times. The ion beam may perform any process, such as ion implantation, etching or deposition. 1. A method of processing a workpiece , comprising:rotating the workpiece about a center in a first direction while an ion beam is directed toward a first position, where the ion beam extends beyond an outer edge of the workpiece at two first locations and the first position is a predetermined distance from the outer edge of the workpiece, so as to process a portion of an outer portion of the workpiece;moving the workpiece relative to the ion beam so as to direct the ion beam toward a second position on the workpiece, where the ion beam extends beyond an outer edge of the workpiece at two second locations and the second position is the predetermined distance from the outer edge of the workpiece; androtating the workpiece about the center in a second direction, opposite the first direction, while the ion beam is directed toward the second position, so as to process a remainder of the outer portion of the workpiece.2. The method of claim 1 , wherein the workpiece is rotated at least 180° in the first direction and at least 180° in the second direction.3. The method of claim 1 , wherein the ion beam does not impact the workpiece during the moving.4. The method of claim 3 , wherein the ion beam is blocked by a ...

Annular cooling fluid passage for magnets

A magnet having an annular coolant fluid passage is generally described. Various examples provide a magnet including a first magnet and a second magnet disposed around an ion beam coupler with an aperture there through. The first and second magnets each including a metal core having a cavity therein, one or more conductive wire wraps disposed around the metal core, and an annular core element configured to be inserted into the cavity, wherein an annular coolant fluid passage is formed between the cavity and the annular core element. Furthermore, the annular core element may have a first diameter and a middle section having a second diameter, the second diameter being less than the first diameter. Other embodiments are disclosed and claimed.

High Temperature Intermittent Ion Implantation

A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level. 1. A method comprising:providing a semiconductor substrate; and applying an ion beam to the surface during a first time range;', 'not applying the ion beam to the surface during a second time range, the second time range following the first time range;', 'applying the ion beam to the surface during a third time range, the third time range following the second time range;', 'not applying the ion beam to the surface during a fourth time range, the fourth time range following the third time range;, 'performing an ion implantation process to a surface of the substrate, the ion implantation process comprisingwhile performing the ion implantation process, continuously applying a heating process with a heating temperature above a threshold level; and wherein the annealing spike process includes applying an annealing temperature that is higher than the heating temperature, and', 'wherein a time duration of the annealing spike process is less than a time duration of the heating process., 'after performing the ion implantation process, performing an annealing spike process to the substrate,'}2. The method of claim 1 , wherein the ion implantation processes comprises moving the substrate in and out of a path of a continuous ion beam by securing the substrate to a platen and moving the platen such that the substrate passes in and out of the continuous ion beam.3. (canceled)4. The method of claim 1 , wherein the temperature threshold is about 150 degrees Celsius.5. The method of claim 1 , wherein the heating temperature is within a range of about 150 to about 800 degrees Celsius.6. The method of claim 1 , wherein the first time range is between 1 and 8 ...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS

A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method. 1. A manufacturing method of a semiconductor device , the method comprising:implanting impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, so as to modify a surface of the polishing target film; andpolishing the modified surface of the polishing target film by a CMP method.2. The method of claim 1 , wherein the impurities are ions containing F claim 1 , B claim 1 , P claim 1 , or N and are implanted into an entire surface of the polishing target film or a central portion of the surface of the polishing target film.3. The method of claim 1 , wherein the impurities are ions containing C claim 1 , N claim 1 , or Si and are implanted into the outer peripheral portion of the polishing target film.4. The method of claim 2 , wherein the impurities are ions containing C claim 2 , N claim 2 , or Si and are implanted into the outer peripheral portion of the polishing target film.5. The method of claim 3 , further comprising thermally treating the polishing target film at a temperature equal to or higher than 900 degrees after implantation of the impurities and before polishing of the polishing target film.6. The method of claim 1 , whereinimplanting of ...

ION IMPLANTER POWER SUPPLY WHICH IS INTENDED TO LIMIT THE LOADING EFFECT

The invention relates to a power supply ALT for an ion implanter, the power supply comprising: an electricity generator SOU placed between a substrate-carrier tray PPS and ground E, and a capacitor CDS in a parallel branch likewise connected between the substrate-carrier tray PPS and ground E. The capacitor CDS has a capacitance of less than 5 nF. The invention also provides an ion implanter incorporating the power supply. 1. A power supply ALT , ALTi , ALTj for an ion implanter , the power supply comprising an electricity generator SOU placed between a substrate-carrier tray PPS and ground E , the power supply further comprising a capacitor CDS in a parallel branch likewise connected between said substrate-carrier tray PPS and ground E , the power supply being characterized in that said capacitor CDS has capacitance of less than 5 nF.2. A power supply according to claim 1 , characterized in that said parallel branch comprises said capacitor CDS only.3. A power supply according to claim 1 , characterized in that said generator is a voltage generator ALTi claim 1 , and it includes a load impedance Z in series therewith.4. A power supply according to claim 3 , characterized in that said load impedance Z presents resistance lying in the range 200 kΩ to 2000 kΩ.5. A power supply according to claim 3 , characterized in that the voltage delivered by said generator ALTi lies in the range −100 V to −10 claim 3 ,000 V.6. A power supply according to claim 1 , characterized in that said generator is a current generator ALTj.7. A power supply according to claim 6 , characterized in that the voltage delivered by said generator ALTj lies in the range −100 V to −100 claim 6 ,000 V.8. An ion implanter comprising a power supply according to claim 1 , and a pulsed plasma source ALP claim 1 , and characterized in that it includes means for ensuring that the duration of the plasma pulse emitted by said pulsed plasma source ALP lies in the range 20 μs to 5000 μs.9. An ion implanter ...

Multi-Part Mask For Implanting Workpieces

A multi-part mask has a pattern plate, which includes a planar portion that has the desired aperture pattern to be used during workpiece processing. The multi-part mask also has a mounting frame, which is used to hold the pattern plate. Prior to assembly, the pattern plate has an aligning portion, which has one or more holes through which reusable alignment pins are inserted. These alignment pins enter kinematic joints disposed on the mounting frame, which serve to precisely align the pattern plate to the mounting frame. After the pattern plate has been secured to the mounting frame, the aligning portion can be detached from the pattern plate. The alignment pins can be reused at a later time. In some embodiments, the pattern plate can later be removed from the mounting frame, so that the mounting frame may be reused. 1. A mask for use during processing of a workpiece , comprising:a pattern plate comprising a planar portion comprising a series of apertures forming a pattern to be used during processing of said workpiece; an outer perimeter onto which said planar portion is affixed; and', 'an alignment protrusion comprising one or more kinematic joints to facilitate alignment between said mounting frame and said pattern plate; and', 'a structural bonding agent to secure said pattern plate and said mounting frame., 'a mounting frame comprising2. The mask of claim 1 , wherein said structural bonding agent comprises:a plurality of bosses disposed on said mounting frame; anda plurality of corresponding boss joints disposed on said pattern plate, wherein said bosses extend through said boss joints.3. The mask of claim 2 , wherein an epoxy is disposed in said boss joints.4. The mask of claim 1 , wherein said structural bonding agent comprises a plurality of pins or screws inserted in holes disposed in said pattern plate and said mounting frame.5. The mask of claim 1 , further comprising a thermally conductive adhesive disposed between said mounting frame and said pattern ...

Elastic wave filter device and manufacturing method of the same

An elastic wave filter device includes a transmission elastic wave filter chip and a reception elastic wave filter chip. The transmission elastic wave filter chip includes an insulating support substrate, a piezoelectric layer directly or indirectly supported by the support substrate, and an IDT electrode in contact with the piezoelectric layer. The reception elastic wave filter chip includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. The thermal conductivity of the support substrate is higher than the thermal conductivity of either of the piezoelectric layer and the piezoelectric substrate.

FLUORINATED COMPOSITIONS FOR ION SOURCE PERFORMANCE IMPROVEMENTS IN NITROGEN ION IMPLANTATION

Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF, NF, F, SiF, WF, PF, PF, AsF, AsF, CFand other fluorinated hydrocarbons of CF(x≥1, y≥1) general formula, SF, HF, COF, OF, BF, BF, GeF, XeF, O, NO, NO, NO, NO, and O, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H, NH, NH, BH, AsH, PH, SiH, SiH, HS, HSe, CHand other hydrocarbons of CH(x≥1, y≥1) general formula and GeH. 1. A nitrogen ion implantation composition comprising:{'sub': '2', 'a dopant gas comprising N; and'}{'sub': 3', '2', '4', '2', '2', '2', '4, 'a glitching-suppressing gas comprising at least one of NF, NF, NO, NO, NO, NO, or any combination thereof;'}wherein the dopant gas and the glitching-suppressing gas are present in an amount sufficient to reduce formation of nitrides on a surface of a nitrogen ion implantation system, as compared to a composition that does not comprise the glitching-suppressing gas.2. The nitrogen ion implantation composition of claim 1 , wherein the dopant gas is present in amount of 50% or greater by volume based on a total volume of the nitrogen ion implantation composition.3. The nitrogen ion implantation composition of claim 1 , wherein the glitching-suppressing gas is present in an amount of 1% to 49% by volume based on a total volume of the nitrogen ion implantation ...

METHOD FOR INCREASING PHOTORESIST ETCH SELECTIVITY TO ENABLE HIGH ENERGY HOT IMPLANT IN SIC DEVICES

A method for performing an ion implantation process including providing a hardmask layer disposed atop a substrate, providing a photoresist layer disposed atop the hardmask layer and defining a pattern exposing a portion of the hardmask layer, performing a room temperature ion implantation process wherein an ion beam formed of an ionized first dopant species is directed onto the exposed portion of the hardmask layer to make the exposed portion more susceptible to ion etching or wet etching, performing an etching process wherein the exposed portion of the hardmask layer is etched away to expose an underlying portion of the substrate, and performing a high energy, hot ion implantation process wherein an ion beam formed of a ionized second dopant species is directed onto the exposed portion of the substrate. 1. A method for performing an ion implantation process , comprising:providing a substrate to be implanted;providing a hardmask layer disposed atop the substrate;providing a photoresist layer disposed atop the hardmask layer, the photoresist layer defining a pattern exposing a portion of the hardmask layer;performing a first ion implantation process wherein an ion beam formed of an ionized first dopant species is directed onto the photoresist layer and the exposed portion of the hardmask layer, the first dopant species selected to make the exposed portion of the hardmask layer more susceptible to etching;performing an etching process wherein the exposed portion of the hardmask layer is etched away to expose an underlying portion of the substrate; andperforming a high energy, hot, second ion implantation process wherein the photoresist layer is removed, and wherein an ion beam formed of a ionized second dopant species is directed onto the hardmask layer and the exposed portion of the substrate to implant the exposed portion of the substrate with the second dopant species.2. The method of claim 1 , wherein the substrate includes an n-drift layer and a silicon nitride ...

Method Of Improving Ion Beam Quality In an Implant System

A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane. 1. A method of implanting dopant into a workpiece , comprising:introducing a first source gas and a second source gas into a chamber of an ion source, said first source gas comprising molecules comprising a dopant and fluoride, wherein said dopant comprises a Group 3 or Group 5 element, and the second source gas comprises molecules comprising hydrogen and a Group 4 element or molecules comprising hydrogen and a species having an opposite conductivity as the dopant;ionizing the first source gas and the second source gas in the chamber, wherein a coating forms on a dielectric window or on an inner surface of the chamber; andextracting ions from the chamber and accelerating the ions toward the workpiece.2. The method of claim 1 , wherein the second source gas comprises molecules comprising hydrogen and a Group 4 element.3. The method of claim 2 , wherein the Group 4 element comprises silicon or germanium.4. The method of claim 1 , wherein the dopant comprises a Group 3 element claim 1 , and the second source gas comprises molecules containing hydrogen and a Group 5 element.5. The method of claim 4 , wherein the Group 3 element comprises boron.6. The method of claim 5 , wherein the Group 5 element comprises phosphorus or arsenic.7. The method of claim 1 , wherein the dopant ...

MULTI-PIECE SUBSTRATE HOLDER AND ALIGNMENT MECHANISM

A system for transporting substrates and precisely align the substrates horizontally and vertically. The system decouples the functions of transporting the substrates, vertically aligning the substrates, and horizontally aligning the substrates. The transport system includes a carriage upon which plurality of chuck assemblies are loosely positioned, each of the chuck assemblies includes a base having vertical alignment wheels to place the substrate in precise vertical alignment. A pedestal is configured to freely slide on the base. The pedestal includes a set of horizontal alignment wheels that precisely align the pedestal in the horizontal direction. An electrostatic chuck is magnetically held to the pedestal. 1. A system for transporting substrates in a processing system , comprising:a carriage configured for supporting and transporting a plurality of chuck assemblies; a plurality of vertical height control rollers configured to control vertical position of the substrate;', 'a plurality of horizontal alignment rollers configured to control horizontal position of the substrate;', 'an electrostatic chuck configured to hold a substrate in precise alignment to the vertical control rollers and the horizontal alignment rollers., 'a plurality of chuck assemblies positioned loosely on the carriage, each of the chuck assemblies comprising2. The system of claim 1 , wherein the carriage defines a plurality of seats claim 1 , each seat configured for supporting one of the plurality of chuck assemblies.3. The system of claim 2 , wherein each of the chuck assemblies further comprises:a base, wherein the vertical height control rollers are attached to the base;a pedestal slidably positioned on top of the base and wherein the horizontal alignment rollers are attached to the pedestal.4. The system of claim 3 , further comprising a vertical urging mechanism urging each of the chuck assemblies vertically upwards from the carriage.5. The system of claim 4 , wherein each of the chuck ...

SYSTEM FOR ACCURATE ALIGNMENT OF WAFERS FOR ION IMPLANTATION

A system for transporting substrates and precisely alignment the substrates to shadow masks. The system decouples the functions of transporting the substrates, vertically aligning the substrates, and horizontally aligning the substrates. The transport system includes a carriage upon which plurality of pedestals are loosely positioned, each of the pedestals includes a base having vertical alignment wheels to place the substrate in precise vertical alignment. Two sidebars are configured to freely slide on the base. Each of the sidebars includes a set of horizontal alignment wheels that precisely align the substrate in the horizontal direction. Substrate support claws are attached to the sidebars in precise alignment to the vertical alignment wheels and the horizontal alignment wheels. 1. A system for transporting substrates in a processing system , comprising:a carriage configured for supporting and transporting a plurality of pedestals; two sets of vertical height control rollers positioned in opposing orientation to each other and configured to control vertical position of the pedestal;', 'two sets of horizontal alignment control rollers positioned in opposing orientation to each other and configured to control horizontal position of the pedestal;', 'a plurality of claws configured to hold a substrate in precise alignment to the vertical control rollers and the horizontal control rollers., 'a plurality of pedestals positioned loosely on the carriage, each of the pedestals comprising2. The system of claim 1 , wherein the carriage defines a plurality of seats claim 1 , each seat configured for supporting one of the plurality of pedestals.3. The system of claim 2 , wherein each of the pedestals further comprises:a base, wherein the two sets of vertical height control rollers are attached to the base;two side bars slidably positioned on top of the base and wherein the two sets of horizontal control rollers are attached to the two sidebars.4. The system of claim 3 , ...

ION IMPLANTATION METHOD AND ION IMPLANTER

An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam. 1. An ion implantation method comprising:irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied; andirradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.2. The ion implantation method according to claim 1 ,wherein an ion species of the first ion beam is the same as an ion species of the second ion beam, andenergy of the first ion beam is different from energy of the second ion beam.3. The ion implantation method according to claim 1 ,wherein the second temperature is higher than the first temperature.4. The ion implantation method according to claim 1 ,wherein the second temperature is lower than the first temperature.5. The ion implantation method according to claim 1 ,wherein energy of the second ion beam is lower than energy of the first ion beam.6. The ion implantation method according to claim 1 ,wherein each of the first temperature and the second temperature is from −200° C. to 500° C.7. The ion implantation method according to claim 1 ,wherein a difference between the first temperature and the second temperature is 50° C. or more.8. The ion implantation method according to claim 1 , further comprising:heating or cooling the wafer using a temperature adjustment device before the irradiation of at least one of the first ion beam and the second ion beam.9. The ion implantation method according to claim 8 ,wherein the temperature adjustment device ...

APPARATUS AND TECHNIQUES FOR BEAM MAPPING IN ION BEAM SYSTEM

An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles. 1. An apparatus for control of an ion beam , comprising:a beam scanner to perform a fast scan of the ion beam over a plurality of scan cycles along a fast scan direction;a detector, disposed to intercept the ion beam, and to perform a slow scan simultaneous to the fast scan, the slow scan comprising moving the detector from a first position to a second position along a scan path parallel to the fast scan direction, wherein a plurality of spot beam profiles are received by the detector during the slow scan;a user interface, coupled to the detector; and a processor; and', 'a memory unit coupled to the processor, including a display routine, the display routine operative on the processor to send a display signal to display on the user interface, at least one set of information, derived from the plurality of spot beam profiles., 'a controller, coupled to the beam scanner, the user interface, and the detector, the controller comprising2. The apparatus of claim 1 , the user interface comprising a plurality of fields and at least one user selection device claim 1 , wherein the display routine ...

ENERGY FILTER ELEMENT FOR ION IMPLANTATION SYSTEMS FOR THE USE IN THE PRODUCTION OF WAFERS

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate. 1. An implantation device for implanting ions in a target substrate , the device comprising:a filter frame,a filter held by the filter frame, the filter being configured to be irradiated by an ion beam passing through the filter, anda collimator structure, which is arranged on the filter or is arranged in the transmitted beam after the filter or is arranged on the target substrate.2. The implantation device of claim 1 , wherein the collimator structure is arranged on the filter claim 1 , and wherein the collimator structure is attached to the filter by the use of an adhesive or by bonding claim 1 , or wherein the collimator structure is formed integrally with the filter.3. The implantation device of claim 2 , wherein the collimator structure is arranged downstream from the filter with respect to a direction of the ion beam.4. The implantation device of claim 3 , wherein the collimator structure is arranged on a structured side of the filter.5. The implantation device of claim 1 , wherein the filter frame is held in a filter holder.6. The implantation device of claim 5 , wherein the collimator structure is arranged on the filter holder in the transmitted beam after the filter.7. The implantation device of claim 1 , wherein the collimator structure comprises a plurality of collimator units arranged in a predetermined pattern.8. The implantation device of claim 7 , wherein the collimator units form a lamellar structure or a lattice in a top view.9. The implantation device of claim 7 , wherein the collimator units are rectangular claim 7 , circular claim 7 , ...

CONTROLLING CONTAMINATION PARTICLE TRAJECTORY FROM A BEAM-LINE ELECTROSTATIC ELEMENT

Provided herein are approaches for controlling particle trajectory from a beam-line electrostatic element. In an exemplary approach, a beam-line electrostatic element is disposed along a beam-line of an electrostatic filter (EF), and a voltage is supplied to the beam-line electrostatic element to generate an electrostatic field surrounding the beam-line electrostatic element, agitating a layer of contamination particles formed on the beam-line electrostatic element. A trajectory of a set of particles from the layer of contamination particles is then modified to direct the set of particles to a desired location within the EF. In one approach, the trajectory is controlled by providing an additional electrode adjacent the beam-line electrostatic element, and supplying a voltage to the additional electrode to control a local electrostatic field in proximity to the beam-line electrostatic element. In another approach, the trajectory is influenced by one or more geometric features of the beam-line electrostatic element. 1. A system , comprising:a beam-line component including a beam-line electrostatic element disposed along an ion beam-line;an additional electrode adjacent the beam-line electrostatic element; supply a voltage to the beam-line electrostatic element to generate an electrostatic field to accelerate ions along the ion beam-line; and', 'supply a voltage to the additional electrode to control a local electrostatic field in proximity to the beam-line electrostatic element., 'one or more power sources configured to2. The system of claim 1 , the beam-line electrostatic element comprising a conductive beam optic.3. The system of claim 1 , the beam-line component comprising an electrostatic filter (EF) claim 1 , the EF including a chamber.4. The system of claim 3 , further comprising a layer of contamination particles formed on a surface of the beam-line electrostatic element claim 3 , wherein the local electrostatic field generated in response to the voltage ...

METHODS, SYSTEMS AND APPARATUS FOR ACCELERATING LARGE PARTICLE BEAM CURRENTS

Systems and methods for accelerating large particle beam currents in an electrostatic particle accelerator are provided. A system may include a process ion source that is configured to emit ions, a particle accelerator and a target. The particle accelerator may include multiple conductive electrodes that are serially arranged to define a particle path between the process ion source and the target and multiple accelerator tubes arranged to further define the particle path between the process ion source, ones of the conductive electrodes and the target. 1. A system comprising:a process ion source that is configured to emit ions;a particle accelerator; anda target, a conductive electrode that includes an interior space and that is configured to be charged to a high-voltage electrical potential;', 'a first charging device that is configured to deliver a charging current to the conductive electrode to charge the conductive electrode to a given polarity and a given magnitude;', 'a second charging device that is configured to generate a voltage stabilizing current to the conductive electrode that corresponds to an ion current of the process ion source that is within the interior space of the conductive electrode; and', 'an accelerator tube positioned between the process ion source and the target and that includes a particle receiving end that is galvanically coupled to the conductive electrode and a particle exit end that is opposite the particle receiving end and that is galvanically coupled to a negative ion or electron source, and, 'wherein the particle accelerator compriseswherein the particle accelerator accelerates the ions emitted from the process ion source to produce accelerated ions that bombard the target.2. The system according to claim 1 , wherein the conductive electrode comprises a hollow metal shell claim 1 , andwherein the negative ion or electron source comprises an earth ground.3. The system according to claim 1 , wherein the accelerator tube comprises ...

STORAGE AND SUB-ATMOSPHERIC DELIVERY OF DOPANT COMPOSITIONS FOR CARBON ION IMPLANTATION

A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus. 1. A dopant gas composition for use in an ion implantation process , comprising:an inert diluent gas mixture comprising xenon (Xe) and hydrogen (H2), wherein the Xe and the H2 are contained in an effective amount, said effective amount being in a volume ratio of Xe:H2 from about 0.02 to about 0.20; and{'sub': '2', 'a carbon-based material contained in a volume ratio of (Xe+H):(carbon-based material) ranging from about 0.10 to about 0.30.'}2. The dopant gas composition of claim 1 , wherein the dopant gas composition is located upstream of an ion source chamber.3. The dopant gas composition of claim 1 , wherein the dopant gas composition is located in an ion source chamber.4. A method for dispensing a dopant gas composition for ion implantation comprising:introducing one or more carbon-containing dopant gases into an ion source chamber;introducing a diluent gas composition into the ion source chamber in a volume ratio of Xe:H2 from about 0.02 to about 0.20;ionizing the one or more carbon-containing dopant gas sources to produce carbon ions; andimplanting the carbon ions into a substrate.5. A method of preparing an inert diluent gas mixture suitable for use in ion implantation claim 1 , comprising:filling a sub-atmospheric delivery and storage device ...

IMPROVED ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS PERFORMING THE SAME

The present invention provides an improved ion implantation method and an ion implantation apparatus for performing the improved ion implantation method, belongs to the field of ion implantation technology, which can solve the problem of the poor stability and uniformity of the ion beam of the existing ion implantation apparatus. The improved ion implantation method of the invention comprises steps of: step S, detecting beam flow densities and beam flow distribution nonuniformities under various decelerating voltages; step S, determining an operation decelerating voltage based on the beam flow densities and the beam flow distribution nonuniformities; and step S, performing an ion implantation under the determined operation decelerating voltage. The present invention ensures the uniformity and stability of the ion beam, and thus ensures the uniformity of performances of the processed base materials in each batch or among various batches. 1. An improved ion implantation method comprising steps of:{'b': '1', 'step S, detecting beam flow densities and beam flow distribution nonuniformities under various decelerating voltages;'}{'b': '2', 'step S, determining an operation decelerating voltage based on the beam flow densities and the beam flow distribution nonuniformities; and'}{'b': '3', 'step S, performing an ion implantation under the determined operation decelerating voltage.'}21. The improved ion implantation method of claim 1 , wherein the step S comprises steps of:{'b': '11', 'step S, setting initial values of parameters, including{'sub': 0', '0', '0', '0, 'setting an initial value of the decelerating voltage to V, the beam flow density to ρ, the beam flow distribution nonuniformity to x, an optimization range of the decelerating voltage to V±L, a control error range of the beam flow density to p, and the beam flow distribution nonuniformity to be less than q; and'}{'b': '12', 'step S, preliminarily determining starting points for optimization of the decelerating ...

ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS

Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material. 130.-. (canceled)31. An ion implantation method , comprising generating phosphorus dopant species , and implanting the phosphorus dopant species in a substrate , wherein the method comprises one of:(i) generating the phosphorus dopant species during a first period of said implanting from a first phosphorus dopant composition, and during a second period of said implanting from a second phosphorus dopant composition, wherein the first and second phosphorus dopant compositions are different from one another; and(ii) generating the phosphorus dopant species from a phosphorus dopant source mixture comprising different phosphorus fluorides.32. The method of claim 31 , wherein the method comprises generating the phosphorus dopant species during a first period of said implanting from a first phosphorus dopant composition claim 31 , and during a second period of said implanting from a second phosphorus dopant composition claim 31 , wherein the first and second phosphorus dopant compositions are different from one another.33. The method of claim 32 , wherein the first phosphorus dopant composition comprises phosphine claim 32 , and the second phosphorus dopant composition comprises PF.34. The method of claim 32 , wherein the first phosphorus dopant composition comprises phosphine claim 32 , and the second phosphorus dopant ...

BRAGG-LIKE GRATINGS ON HIGH REFRACTIVE INDEX MATERIAL

Techniques for fabricating a slanted structure are disclosed. In one embodiment, a method for fabricating a slanted structure on a material layer includes forming a mask layer on the material layer, and implanting ions into a plurality of regions of the material layer at a slant angle greater than zero using an ion beam and the mask layer. The slant angle is measured with respect to a surface normal of the material layer. Implanting the ions into the plurality of regions of the material layer changes a refractive index or an etch rate of the plurality of regions of the material layer. In some embodiments, the method further includes wet-etching the material layer using an etchant to remove materials in the plurality of regions of the material layer. In some embodiments, the method includes either simultaneous or post-implantation etching of modified material through a dry etching process using reactive etchants in feed gas. 1. A method of fabricating a slanted structure on a material layer , the method comprising:forming a mask layer on the material layer; andimplanting ions into a plurality of regions of the material layer at a slant angle greater than zero using an ion beam and the mask layer, wherein the slant angle is measured with respect to a surface normal of the material layer,wherein implanting the ions into the plurality of regions of the material layer changes a refractive index or an etch rate of the plurality of regions of the material layer.2. The method of claim 1 , wherein the material layer comprises one or more of a transparent substrate claim 1 , a semiconductor substrate claim 1 , a SiOlayer claim 1 , a SiNmaterial layer claim 1 , a titanium oxide layer claim 1 , an alumina layer claim 1 , a SiC layer claim 1 , a SiONlayer claim 1 , an amorphous silicon layer claim 1 , a spin on carbon (SOC) layer claim 1 , an amorphous carbon layer (ACL) claim 1 , a diamond like carbon (DLC) layer claim 1 , a TiOlayer claim 1 , an AlOlayer claim 1 , a TaOlayer ...

OPTICAL HEAT SOURCE WITH RESTRICTED WAVELENGTHS FOR PROCESS HEATING

A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission of non-visible wavelengths of light energy and emit light energy at a wavelength in a maximum energy light absorption range of the workpiece. 1. An ion implantation system , comprising:a process chamber;an ion implantation apparatus configured to provide a beam of ions to a workpiece positioned in the process chamber; andan optical heat source configured to emit light energy in a direction toward the workpiece to heat the workpiece, wherein the light energy emitted from the optical heat source has minimal non-visible wavelengths of light energy for heating the workpiece.2. The ion implantation system of claim 1 , wherein said optical heating source is located within the process chamber.3. The ion implantation system of claim 1 , wherein the process chamber includes an optically transmissive window claim 1 , and said optical heating source is located adjacent said process chamber for emitting the light energy through said window.4. The ion implantation system of claim 1 , further comprising a load lock chamber operatively coupled to the process chamber.5. The ion implantation system of claim 4 , wherein said optical heating source is located within the load lock chamber.6. The ion implantation system of claim 4 , wherein the load lock chamber includes an optically transmissive window claim 4 , and said optical heating source is located adjacent said load lock chamber for emitting the light energy through said window.7. The ion implantation system of claim 1 , wherein the heating source comprises a plurality of light-emitting diodes or a wavelength-specific lamp.8. The ion implantation system of claim 7 , wherein the light-emitting diodes are ...

System And Method To Detect Glitches

A glitch monitoring system is disclosed. The glitch monitoring system allows the capture of voltage and current data from one or more channels. Additionally, voltage and current data that occurred prior to the glitch can also be captured for further analysis. The amount of data may be thousands or millions of bytes. Additionally, the description of a glitch, including an upper threshold, a lower threshold and a duration, can be programmed. This allows spurious perturbation in voltage or current to be ignored if desired. Further, the voltage and current data may be filtered if desired prior to being stored in memory. This data can later be retried by a main controller and analyzed to determine a potential cause of the glitch and potential remedial actions. 1. A glitch monitoring system , comprising:an analog to digital conversion circuit for converting analog voltage and current signals to digital values;a trigger logic circuit comprising Glitch Window registers and a Glitch Duration register, wherein the Glitch Window registers establish an upper threshold and a lower threshold for the digital values, such that when a digital value is greater than the upper threshold or less than the lower threshold, a glitch is detected, and wherein the Glitch Duration register establishes a number of glitches that occur consecutively in order to cause a trigger;a memory in which the digital values are stored; andan address logic circuit, which saves an address of a location in memory at which the trigger occurs.2. The glitch monitoring system of claim 1 , further comprising a Post Trigger register claim 1 , which establishes an amount of data to be stored in the memory after the trigger occurs.3. The glitch monitoring system of claim 1 , further comprising a data logic circuit claim 1 , which manipulates the digital values prior to storing the digital values in the memory.4. The glitch monitoring system of claim 3 , wherein the digital values are passed through a low pass filter ...

IMPLANT MASKING AND ALIGNMENT

System and method to align a substrate under a shadow mask. A substrate holder has alignment mechanism, such as rollers, that is made to abut against an alignment straight edge. The substrate is then aligned with respect to the straight edge and is chucked to the substrate holder. The substrate holder is then transported into a vacuum processing chamber, wherein it is made to abut against a mask straight edge to which the shadow mask is attached and aligned to. Since the substrate was aligned to an alignment straight edge, and since the mask is aligned to the mask straight edge that is precisely aligned to the alignment straight edge, the substrate is perfectly aligned to the mask. 1. A system for aligning a substrate to a processing mask , comprising:a substrate holder having a holder alignment mechanism;a system guide configured to be engaged by the holder alignment mechanism to thereby orient the substrate holder to the system guide;a mask alignment mechanism attached to a processing chamber and aligned to the system guide, the mask alignment mechanism having mask attachment mechanism for attaching a processing mask in precise alignment to the mask alignment mechanism tracks positioned below the processing mask and configured to enable the substrate holder to place substrates below the mask when the holder alignment mechanism engages the mask alignment mechanism.2. The system of claim 1 , wherein the holder alignment mechanism comprises at least two rollers.3. The system of claim 2 , wherein the system guide comprises a straight edge configured to be engaged by the rollers.4. The system of claim 3 , wherein the mask alignment mechanism comprises a straight bar configured to be engaged by the rollers.5. The system of claim 4 , further comprising a carrier configured for traveling on the tracks and supporting the substrate holder.6. The system of claim 5 , wherein the substrate holder is configured to move in two degrees of freedom over the carrier.7. The system of ...

ION IMPLANTER, ION IMPLANTATION METHOD, AND BEAM MEASUREMENT APPARATUS

An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup. 1. An ion implanter comprising:a beam deflector that deflects an ion beam incident through a previous stage beam path in a y direction by action of either or both of an electric field and a magnetic field and emits the beam to pass through a subsequent stage beam path extending in a z direction toward a wafer;a beam filter slit that is disposed on the subsequent stage beam path between the beam deflector and the wafer, partially shields the beam traveling through the subsequent stage beam path toward the wafer, and allows passage of a beam component toward the wafer, the beam component having a predetermined trajectory among beam components of the beam passing through the subsequent stage beam path;a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector; anda trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory, among beam components of the beam that exits from the beam deflector and is directed toward the dose cup, from being incident to a measurement region of the ...

HIGH THROUGHPUT COOLED ION IMPLANTATION SYSTEM AND METHOD

An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source. 1. An ion implantation system , comprising:an ion source configured to provide a plurality of ions to a workpiece positioned in a process chamber, wherein the process chamber has a process environment associated therewith;a chuck configured to support the workpiece within the process chamber during exposure of the workpiece to the plurality of ions;a load lock chamber operably coupled to the process chamber, said load lock chamber being configured to enable transfer of the workpiece to and from an atmospheric environment and the process environment, said load lock chamber ...

Enriched silicon precursor compositions and apparatus and processes for utilizing same

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28 Si, 29 Si, and 30 Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

SUBSTRATE TREATING APPARATUS, ION IMPLANTATION APPARATUS, AND ION IMPLANTATION METHOD

An apparatus for treating a substrate includes a process chamber that performs a liquid treatment process by dispensing a treatment liquid onto the substrate, and components provided in the process chamber. A surface of at least one of the components is formed of a material containing an ion-implanted fluorine resin. 1. An apparatus for treating a substrate , the apparatus comprising:a process chamber configured to perform a liquid treatment process by dispensing a treatment liquid onto the substrate; andwherein the process chamber includes a plurality of components which are touched by the treatment liquid, andwherein at least one of the plurality of components includes fluorine resin and has a surface implanted with ions.2. The apparatus of claim 1 ,wherein the apparatus further comprises:a treatment vessel provided in a container shape that is open at the top of the container shape, the treatment vessel having a treatment space in which the substrate is treated, andwherein the treatment vessel is one of the plurality of components.3. The apparatus of claim 2 , further comprising:a lifting unit configured to move the treatment vessel in an up/down direction, the lifting unit being grounded,wherein the treatment vessel is electrically connected to the lifting unit.4. The apparatus of claim 3 ,wherein the treatment vessel includes:a sidewall portion coupled to the lifting unit; andan inclined portion extending upwardly in an inclined direction from an upper end of the sidewall portion, andwherein a first number of implanted ions per unit area at a surface of the inclined portion and a second number of implanted ions per unit area at a surface of the sidewall portion differ from each other.5. The apparatus of claim 4 ,wherein the first number is less than the second number.6. The apparatus of claim 1 ,wherein the apparatus further comprises:a support plate configured to support the substrate in the process chamber; anda chuck pin installed on the support plate and ...

ION IMPLANTATION METHOD AND DEVICE

An ion implantation system comprising: a sample platform; an ion gun; an electrostatic linear accelerator; a direct current (DC) final energy magnet (FEM); and a processor. The processor is programmed to control: a wafer acceptance test instrument, a DC recipe calculator, a DC real energy calculator, and a tool energy shift verifier. The wafer acceptance test instrument is configured to apply a wafer acceptance test (WAT) recipe to a test sample on the sample platform. The DC recipe calculator is configured to calculate a recipe for the DC FEM. The DC real energy calculator is configured to calculate a real energy of the DC FEM. The tool energy shift verifier is configured to verify a tool energy shift of the DC FEM. The ion implantation system is configured to tune the DC FEM based on the verified tool energy shift, and obtain a peak magnetic field of the DC FEM. 1. An ion implantation system comprising:a sample platform;an ion gun;an electrostatic linear accelerator;a direct current (DC) final energy magnet (FEM); and a wafer acceptance test instrument configured to apply a wafer acceptance test (WAT) recipe to a test sample on the sample platform;', 'a DC recipe calculator configured to calculate a recipe for the DC FEM;', 'a DC real energy calculator configured to calculate a real energy of the DC FEM;', 'a tool energy shift verifier configured to verify a tool energy shift of the DC FEM; and', 'the ion implantation system configured to tune the DC FEM based on the verified tool energy shift, and obtain a peak magnetic field of the DC FEM., 'a processor programmed to control2. The ion implantation system of claim 1 , wherein the DC FEM is configured to obtain a calibration curve of the DC FEM.3. The ion implantation system of claim 2 , wherein the DC FEM is configured to perform servo loop to adjust parameters of the DC FEM.4. The ion implantation system of claim 1 , wherein the recipe for the DC FEM includes an applied magnetic field.5. The ion implantation ...

METHOD OF MANUFACTURING OPTICAL MEMBER

A manufacturing method of an optical member includes providing a raw member, disposing first ions and second ions in the raw member, and heat-treating the raw member with the first and second ions therein such that the first ions are reacted with the second ions in the raw member to form quantum dots in the raw member which forms the optical member. 1. A method of manufacturing an optical member , comprising:providing a raw member injecting first ions and second ions into the raw member; andheat-treating the raw member having the first ions and second ions therein to couple the first ions to the second ions within a portion of the raw member, the coupled ions forming quantum dots within the portion of the raw member to form the optical member.2. The method of claim 1 , wherein the injecting the first and second ions into the raw member comprises:accelerating the first ions to form a first ion beam;accelerating the second ions to form a second ion beam;irradiating the first ion beam to the raw member to inject the first ions into the raw member; andirradiating the second ion beam to the raw member to inject the second ions into the raw member.3. The method of claim 1 , wherein the heat-treating the raw member is performed by heating the raw member at a temperature equal to or greater than about 300 degrees Celsius and equal to or less than about 500 degrees Celsius.4. The method of claim 1 , whereinthe first and second ions are injected into the raw member through a side surface thereof corresponding to a light incident surface of the optical member, andthe injected first and second ions are disposed within a first area portion of the raw member, the first area portion defined from the side surface of the raw member, andthe injected first and second ions are not disposed within a second area portion of the raw member, the second area portion defined as a remaining area portion of the raw member except for the first area portion.5. The method of claim 1 , wherein the ...

HYBRID ELECTROSTATIC LENS WITH INCREASED NATURAL FREQUENCY

A composite electrostatic rod may include a body comprising a length L and cross sectional area A. The body may include an outer portion comprising a first material, and a core comprising a second material different than the first material and surrounded by the outer portion, wherein a natural frequency of the composite electrostatic rod is greater than that of a graphite rod having the length L and cross sectional area A. 1. A composite electrostatic rod for use in an electrostatic lens , for controlling an ion beam for ion implantation , comprising:a body having a length L and cross sectional area A, the body comprising:an outer portion comprising an upper shell and a lower shell fastened together, the upper and lower shells formed of a first material; anda core formed from a second material different than the first material and surrounded by the outer portion, wherein a natural frequency of the composite electrostatic rod is greater than that of a graphite rod having the length L and cross sectional area A.2. The composite electrostatic rod of claim 1 , comprising a strength-to-weight ratio greater than that of the graphite rod having the length L and the cross sectional area A.3. The composite electrostatic rod of claim 1 , wherein the outer portion has an inner surface and the core has an outer surface claim 1 , the inner surface and outer surface being in direct contact along the entire length of the body.4. The composite electrostatic rod of claim 1 , further comprising a hollow region between the core and the outer portion.5. The composite electrostatic rod of claim 1 , wherein the first material comprises graphite or silicon and the second material comprises aluminum claim 1 , steel or carbon composite.6. The composite electrostatic rod of claim 1 , further comprising a plurality of fasteners extending from the outer portion to the core and operable to fix the core to the outer portion.7. The composite electrostatic rod of claim 1 , the outer portion ...

ION BEAM TREATMENT PROCESS FOR PRODUCING A SCRATCH-RESISTANT HIGH- TRANSMITTANCE ANTIREFLECTIVE SAPPHIRE

Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: 1. A process for antireflective treatment in the visible region of a material made of sapphire , comprising:bombarding the material with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where:an acceleration voltage is within a range of between 10 and 100 kV;{'sup': 2', '16', '17', '2, 'an implanted dose of ions, expressed in ions/cm, is within a range of between 10and 3×10ions/cm;'}{'sub': 'D', 'a rate of displacement V, expressed in cm/s, is within a range of between 0.1 cm/s and 5 cm/s.'}2. The process according to claim 1 , characterized in that the mixture of mono- and multicharged ions are ions of the elements selected from the group consisting of helium (He) claim 1 , neon (Ne) claim 1 , argon (Ar) claim 1 , krypton (Kr) claim 1 , and xenon (Xe).3. The process according to claim 1 , characterized in that the mixture mono- and multicharged ions are ions of gases selected from the group consisting of nitrogen (N) and oxygen (O).4. The process according to claim 1 , characterized in that the implanted dose claim 1 , expressed in ions/cm claim 1 , is between (5×10)×(M/14)and 10×(M/14) claim 1 , where M is the atomic mass of the ion.5. The process according to claim 1 , characterized in that the rate of displacement V claim 1 , expressed in cm/s claim 1 , is between 0.025×(P/D) and 0.1×(P/D) claim 1 , where P is the power of the beam claim 1 , expressed in W (watts) claim 1 , and D is the diameter of the beam claim 1 , expressed in cm (centimeters).6. The process according to claim 1 , characterized in that a displacement amplitude A of the beam claim 1 , expressed in cm claim 1 , is chosen so that (P/A)>0.04 W/cm claim 1 , where P is the power of the beam claim 1 , expressed in W (watts).7. The process ...

ION IMPLANTATION METHOD

A method of tuning an ion implantation apparatus is disclosed. The method includes operations of applying any wafer acceptance test (WAT) recipe to a test sample, calculating a recipe for a direct current (DC) final energy magnet (FEM), calculating a real energy of the DC FEM, verifying the tool energy shift, and obtaining a peak spectrum of the DC FEM. 1. A method of tuning an ion implantation apparatus , comprising:applying a wafer acceptance test (WAT) recipe to a test sample;calculating a recipe for a direct current (DC) final energy magnet (FEM);calculating a real energy of the DC FEM;verifying a tool energy shift;tuning the ion implantation apparatus based on the verified tool energy shift; andobtaining a magnetic spectrum of the DC FEM.2. The method of claim 1 , further comprising:obtaining a calibration curve of the DC FEM.3. The method of claim 2 , further comprising:performing servo loop to adjust parameters of the DC FEM.4. The method of claim 1 , wherein the recipe for the DC FEM includes an applied magnetic field.5. The method of claim 1 , wherein the tool energy shift is verified by calculating a difference between a nominal energy and the real energy.6. The method of claim 5 , wherein the nominal energy is obtained by calculating a nominal applied magnetic field.7. The method of claim 6 , wherein the nominal applied magnetic field is calculated based on parameters entered by a user.8. The method of claim 5 , wherein the real energy is obtained by calculating an actual applied magnetic field by data obtained from the process of applying the WAT recipe to a test sample.9. A method of tuning a final energy magnet (FEM) claim 5 , comprising:obtaining a calibration curve of the DC FEM.performing servo loop to adjust parameters of the DC FEMapplying a wafer acceptance test (WAT) recipe to a test sample;calculating a recipe for a direct current (DC) final energy magnet (FEM);calculating a real energy of the DC FEM;verifying a tool energy shift;tuning the DC ...

ION IMPLANTER AND ION SELECTION METHOD

An ion implanter according to an embodiment of the present disclosure includes: an ion source that includes a plurality of kinds of ions; an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam; an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; and an interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential. 1. An ion implanter comprising:an ion source that includes a plurality of kinds of ions;an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam;an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; andan interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential.2. The ion implanter according to claim 1 , wherein the interaction section changes a trajectory of the ion beam by an interaction between: image charges in the interaction section with respect to the plurality of kinds of ions; and the plurality of kinds of ions.3. The ion implanter according to claim 1 , whereinthe ion beam includes a first ion having a first mass m1 and a first charge number q1, and a second ion having a second mass m2 and a second charge number q2, and{'sup': 2', '2, 'the interaction section causes a first trajectory of the first ion and a second trajectory of the second ion to differ from each other in accordance with a difference between m1/(q1)and m2/(q2).'}4. The ion implanter according to claim 3 , further comprisinga slit that causes the first ion to pass through and shields the second ion.5. The ion implanter according to claim 1 , wherein the ...

ION IMPLANTER, MAGNETIC FIELD MEASUREMENT DEVICE, AND ION IMPLANTATION METHOD

An ion implanter includes an energy analyzer electromagnet provided between an ion source and a processing chamber. The energy analyzer electromagnet includes a Hall probe configured to generate a measurement output in response to a deflecting magnetic field and an NMR probe configured to generate an NMR output. A control unit of the ion implanter includes a magnetic field measurement unit configured to measure the deflecting magnetic field in accordance with a known correspondence between the deflecting magnetic field and the measurement output, a magnetic field determination unit configured to determine the deflecting magnetic field from the NMR output, and a Hall probe calibration unit configured to update the known correspondence by using the deflecting magnetic field determined from the NMR output and a new measurement output of the Hall probe corresponding to the determined deflecting magnetic field. 1. An ion implanter comprising:a beamline unit comprising an ion source and a processing chamber for processing a workpiece, the beamline unit configured to transport an ion beam from the ion source to the workpiece; anda control unit configured to control the beamline unit,wherein the beamline unit comprises a deflecting electromagnet provided between the ion source and the processing chamber, a pair of electromagnets facing each other across an ion beam orbit so as to form a deflecting magnetic field for deflecting the ion beam;', 'a magnetic field detection element provided between the pair of electromagnets and configured to output a measurement output in response to the deflecting magnetic field; and', 'a nuclear magnetic resonance probe provided between the pair of electromagnets and configured to generate an NMR output,, 'wherein the deflecting electromagnet comprises a magnetic field measurement unit configured to measure the deflecting magnetic field in accordance with a known correspondence between the deflecting magnetic field and the measurement output ...

ION SOURCE OF AN ION IMPLANTER

An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source. 1. An ion source of an ion implanter , comprising:a vessel, a first side of said vessel having an extraction slit;a coil set having at least one induction coil for transmitting an ac power generated by a power generator into said vessel, said coil set being positioned outside said vessel and at least part of whose area is proximate to a second side of said vessel; anda coil shield that is positioned between said coil set and said vessel and is connected to said coil set.2. The ion source as recited in claim 1 , further being characterized by one or more of the following:said coil shield being connected to at least one contact point in said coil set, wherein said contact point is positioned so that the parts of said coil set on either side of this connection point have approximately equal electrical inductance;said coil shield being connected to an approximate midpoint of the electrical connection between said induction coil; andsaid coil shield being connected to an external rf/VHF voltage source that is variable and controllable so that a sufficient large rf/VHF electrical potential can be imposed on the ...

ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode. 1. An ion beam processing apparatus configured to perform processing by ion beam irradiation , comprising:an ion generation chamber including an ion generator;a processing chamber in which the processing is performed and a holder to hold a substrate is disposed;a plurality of electrodes configured to separate the ion generation chamber from the processing chamber, and to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber, the plurality of electrodes includinga first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, anda second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions; and a material of the first electrode is different from a material of the second electrode, and', {'sub': 1', '2', '1', '2, 'a linear expansion coefficient αof the material of the first electrode and a linear expansion coefficient αof the material of the ...

Ion Implantation Apparatus and Method of Manufacturing Semiconductor Devices

An implantation apparatus includes a scanning assembly that effects a relative movement between an ion beam and a semiconductor substrate along a first scan direction and along a second scan direction orthogonal to the first scan direction. A tilt assembly changes a tilt angle θ between a beam axis of the ion beam and a normal to a main surface of the semiconductor substrate from a first tilt angle θ1 to a second tilt angle θ2, wherein an angular span Δθ between the first tilt angle θ1 and the second tilt angle θ2 is at least 5°. A control unit controls the tilt assembly to continuously change the tilt angle θ during the relative movement between the ion beam and the semiconductor substrate. 1. An implantation apparatus , comprising:a scanning assembly configured to effect a relative movement between an ion beam and a semiconductor substrate along a first scan direction and along a second scan direction orthogonal to the first scan direction;{'b': 1', '2', '1', '2, 'a tilt assembly configured to change a tilt angle θ between a beam axis of the ion beam and a normal to a main surface of the semiconductor substrate from a first tilt angle θ to a second tilt angle θ, wherein an angular span Δθ between the first tilt angle θ and the second tilt angle θ is at least 5°; and'}a control unit configured to control the tilt assembly to continuously change the tilt angle θ during the relative movement between the ion beam and the semiconductor substrate.2. The implantation apparatus of claim 1 , wherein the scanning assembly comprises a deflection unit configured to deflect the ion beam along the first scan direction and along the second scan direction.3. The implantation apparatus of claim 2 , wherein a scanning speed along the first scan direction is larger than a scanning speed along the second direction claim 2 , and wherein the control unit is configured to change the tilt angle θ by the angular span Δθ during a single ion implantation process that includes a plurality of ...

APPARATUS AND TECHNIQUES FOR DECELERATED ION BEAM WITH NO ENERGY CONTAMINATION

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage. 1. An ion implantation system , comprising:an ion source to generate an ion beam;a substrate stage disposed downstream of the ion source;a deceleration stage including a component to deflect the ion beam, the deceleration stage disposed between the ion source and substrate stage; anda gas source, the gas source to provide hydrogen gas or helium gas to the deceleration stage,wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.2. The ion implantation system of claim 1 , wherein the deceleration stage comprises a curved shape claim 1 , wherein the deceleration stage does not provide a line of sight path for the ion beam from an entrance to an exit of the deceleration stage.3. The ion implantation system of claim 1 , comprising a port to transport the hydrogen gas or the helium gas directly into the deceleration stage.4. The ion implantation of claim 1 , the deceleration stage comprising a partial pressure of hydrogen or helium of at least 5×10Torr.5. The ion implantation system of claim 1 , the gas source comprising a plurality of ports to provide hydrogen gas or helium gas to the ion beam claim 1 , wherein at least one port of the plurality of ports is disposed in the deceleration stage.6. The ion implantation system of claim 1 , the gas source comprising a local hydrogen generator.7. The ion implantation system of claim 6 , the gas source comprising an electrolytic hydrogen generator.8. The ion implantation system of claim 1 , ...

Wafer Support Assembly Including Ion Implantation Mask Structure

A wafer support assembly can include a wafer chuck including a first surface and a second surface, where the first surface can have a central region that is configured to hold a wafer during ion implantation into the wafer, and an edge region surrounding the central region beyond an edge of the wafer when held in the central region, and the second surface opposing the first surface. An edge mask structure can cover at least a portion of the edge region of the first surface, where the edge mask structure can have a mask body with an inclined side surface facing the central region.

METHOD OF ENHANCING THE ENERGY AND BEAM CURRENT ON RF BASED IMPLANTER

Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece. 1. A high energy ion implantation system , comprising:an ion beam source configured to generate an ion beam comprising a plurality of ions along a beamline;a mass analyzer configured to mass analyze the ion beam;a first RF accelerator configured to receive the ion beam from the mass analyzer, wherein the plurality of ions are at an initial energy and an initial charge state, wherein the first RF accelerator is further configured to accelerate the plurality of ions to a first energy at the initial charge state;an electron stripper positioned downstream of the first RF accelerator and configured to receive the plurality of ions at the initial charge state and first energy and to convert the plurality of ions to a plurality of charge states at the first energy;a charge selector positioned downstream of the electron stripper and configured to select a final charge state at the first energy from the plurality of charge states of the plurality of ions;a second RF accelerator positioned downstream of the charge selector and configured to accelerate the plurality of ions to a final energy spectrum at the final charge state; anda final energy filter positioned downstream of the second RF accelerator and configured to purify the plurality of ...

APPARATUS AND METHOD FOR GENERATING HIGH CURRENT NEGATIVE HYDROGEN ION BEAM

An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive Hgas; a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and an extraction assembly arranged to extract the H ions from the ion source chamber. 1. An apparatus to generate negative hydrogen ions , comprising:{'sub': '2', 'an ion source chamber having a gas inlet to receive Hgas;'}{'sub': 2', '2, 'a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas;'}{'sup': '−', 'sub': '2', 'a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and'}{'sup': '−', 'an extraction assembly arranged to extract the H ions from the ion source chamber, wherein the light source is embedded at least partially in a wall of the ion source chamber, or is disposed within the ion source chamber.'}2. The apparatus of claim 1 , the light source extending along a first side of the ion source chamber and along a second side of the ion source chamber.3. The apparatus of claim 1 , the low energy electron source extending along a third side of the ion source chamber and along a fourth side of the ion source chamber.4. The apparatus of claim 1 , the light source generating radiation having an energy of at least 1.5 eV.5. The apparatus of claim 1 , the light source comprising radiation having a photon energy of 1.5 eV to 5.0 eV.6. The apparatus of claim 1 , the light source comprising a light-emitting diode claim 1 , a laser claim 1 , or a broad spectrum light source generating photons having ...

Ion beam irradiation apparatus

An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.

CARBON MATERIALS FOR CARBON IMPLANTATION

A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CFOHwherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide. 122-. (canceled)23. A gas composition comprising:{'sub': 2', '2, 'a carbon-containing dopant material for implanting carbon ions into a substrate, wherein the carbon-containing dopant material is any one of CO, COor COF; and'}at least one additional gas.24. The gas composition of claim 23 , wherein the at least one additional gas comprises a gas selected from the group consisting of oxygen claim 23 , oxygen-containing gas claim 23 , fluorine-containing gas claim 23 , COF claim 23 , CO claim 23 , CO claim 23 , air claim 23 , hydrogen claim 23 , fluorine claim 23 , nitrogen claim 23 , argon claim 23 , xenon claim 23 , and helium.25. The gas composition of claim 23 , wherein the carbon-containing dopant material comprises at least one of CO and CO claim 23 , and wherein the additional gas or series of gases comprises one or more of F claim 23 , COF claim 23 , and CF.26. The gas composition of claim 23 , wherein the carbon-containing dopant material comprises CO.27. The gas composition of claim 23 , wherein the at least one additional gas comprises hydrogen.28. The gas composition of claim 23 , wherein the at least one additional gas comprises xenon and hydrogen.29. The gas composition of claim 23 , wherein the at least one additional gas comprises a fluorine-containing gas.30. The gas composition of claim 23 , wherein the carbon- ...

Semiconductor process pumping arrangements

A semiconductor process pump configured to mitigate losses in pump speed during operation. The semiconductor process pump may include a housing having an inlet port for receiving gas molecules therethrough, wherein a forward-most terminus of the inlet port defines an inlet face, one or more working surfaces disposed within the housing, and a mounting flange disposed on an exterior of the housing for facilitating attachment of the pump to a gas enclosure, wherein a forward-most terminus of the mounting flange defines a flange face. The flange face may be offset from the inlet face rearwardly along the housing by a distance d. Thus, when the semiconductor process pump is mounted to a wall of a gas enclosure, the housing may extend into the wall and the inlet face may be disposed within or immediately adjacent the interior of the gas enclosure.

Ion Implant Assisted Metal Etching

An improved method of etching a metal substrate is described. After a mask layer is applied to the metal substrate, an ion implantation process is performed which implants ions, such as oxygen ions, into the exposed regions of the metal substrate. This implantation creates regions of metal oxide, which may be more susceptible to etching. Afterwards, the exposed regions of metal oxide are subjected to an etching process. This process may be through vaporization or may be a wet etch process. In some embodiments, the etchant is selected so that the metal oxide binds with the etchant to form a volatile compound, which stays in the vapor or gaseous state. This may reduce the unwanted deposition of the metal to other surfaces. These ion implantation and etching processes may be repeated a plurality of times to create a recessed feature of the desired depth. 1. A method of forming a recessed feature in a metal substrate , comprising:implanting oxygen ions into a region of said metal substrate to form a metal oxide region; andexposing said metal oxide region to an etchant,wherein the oxygen ions are implanted at a plurality of energies so as to create a uniform distribution of oxygen ions throughout the metal oxide region.2. The method of claim 1 , wherein said etchant chemically reacts with metal oxide in said metal oxide region to form a volatile metal precursor.3. The method of claim 2 , wherein said etchant does not chemically react with said metal substrate.4. The method of claim 2 , wherein said etchant is introduced into a chamber and said method further comprises exhausting said volatile metal precursor from said chamber.5. The method of claim 1 , wherein said etchant is in vapor or gas form.6. The method of claim 1 , wherein said etchant is in liquid form.7. The method of claim 1 , wherein said etchant comprises HFAc.8. The method of claim 1 , wherein said etchant comprises acetic acid.9. The method of claim 1 , further comprising repeating said implanting and ...

System And Technique For Profile Modulation Using High Tilt Angles

A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 μm or more using larger tilt angles. 1. A semiconductor processing apparatus , comprising:an ion source;a mass analyzer;an accelerator capable of accelerating hydrogen ions to an implant energy between a minimum value and a maximum value, wherein the minimum value is greater than 500 keV;a platen, in communication with a platen orientation motor to vary a tilt angle and a twist angle of the platen; anda controller, wherein the controller configures the accelerator to accelerate the hydrogen ions to an implant energy between the minimum value and the maximum value, and configures the platen orientation motor to a tilt angle and a twist angle such that the hydrogen ions are implanted into a silicon workpiece such that a peak concentration depth (Rp) of hydrogen ions, prior to thermal treatment, is nearly identical to an implant performed at an implant energy of 400 keV.2. The semiconductor processing apparatus of claim 1 , wherein the tilt angle is greater than 50°.3. The semiconductor processing apparatus of claim 1 , wherein the maximum value is 5 MeV and the minimum value is greater than 600 keV.4. The semiconductor processing apparatus of claim 3 , wherein the tilt angle is ...

System And Method For Reduced Workpiece Adhesion Due To Electrostatic Charge During Removal From A Processing Station

A system and method for reduced workpiece adhesion during removal from a semiconductor processing station. The system provides an electrostatic charge detector that measures the residual charge on an electrostatically clamped workpiece prior to removal from a processing station inside the semiconductor processing tool. One embodiment uses an algorithm that to predict when to remove the workpiece without electrostatic adhesion based upon the decay rate of the residual electrostatic charge (Q) on the workpiece. Other embodiments also provide for a processing station static charge buildup health check and an excessive static charge check on incoming workpieces. 1. An apparatus for determining when a workpiece may be removed from an electrostatic clamp , comprising:a platen;an electrostatic power supply to supply a clamping voltage to the platen;an electrostatic charge detection system, disposed proximate the platen to detect charge; anda control system in communication with the electrostatic charge detection system, wherein the control system:detects when the clamping voltage has been disabled; anddetermines when residual charge on a workpiece disposed on the platen has dissipated to a level where it is safe to remove the workpiece from the platen.2. The apparatus of claim 1 , where the control system monitors a rate of change of the charge to make the determination.3. The apparatus of claim 1 , wherein the charge decreases after the clamping voltage is disabled claim 1 , and the control system monitors the charge until it is below a predetermined threshold.4. The apparatus of claim 1 , wherein the platen is disposed in a processing station maintained at vacuum conditions claim 1 , and the electrostatic charge detection system is disposed in the processing station.5. The apparatus of claim 1 , wherein the platen is disposed in a processing station maintained at vacuum conditions claim 1 , and the processing station comprises a window claim 1 , and wherein the ...

MECHANISMS FOR MONITORING ION BEAM IN ION IMPLANTER SYSTEM

In accordance with some embodiments, an assembly of an ion implanter system is provided. The assembly includes a control unit, a wafer holder and a detecting device. The wafer holder and the detecting device are respectively positioned at two sides of the control unit. The control unit is configured to drive the wafer holder and the detecting device to rotate about at least one rotation axis. 1. An assembly of an ion implanter system , comprising:a control unit;a wafer holder; anda detecting device, wherein the wafer holder and the detecting device are respectively positioned at two sides of the control unit, and the control unit is configured to drive the wafer holder and the detecting device to rotate about at least one rotation axis.2. The assembly as claimed in claim 1 , wherein the control unit comprises a first drive mechanism to drive the wafer holder and the detecting device to rotate about a horizontal axis claim 1 , wherein the wafer holder and the detecting device are positioned at two opposite sides of the first drive mechanism.3. The assembly as claimed in claim 2 , wherein the first drive mechanism has an anterior surface and a posterior surface claim 2 , and a central axis passes through the anterior surface and the posterior surface claim 2 , wherein the wafer holder and the detecting device are disposed on the anterior surface and the posterior surface claim 2 , respectively.4. The assembly as claimed in claim 3 , wherein the wafer holder and the detecting device are arranged along the central axis.5. The assembly as claimed in claim 3 , wherein the wafer holder has a supporting surface claim 3 , and the detecting device has an ion beam receiving surface claim 3 , wherein the supporting surface and the ion beam receiving surface are perpendicular to the central axis.6. The assembly as claimed in claim 2 , wherein the control unit further comprises a second drive mechanism to drive the wafer holder and the detecting device to rotate about a vertical ...

ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD

An ion implantation apparatus includes an implantation processing chamber, a high voltage unit, and a high-voltage power supply system. In the implantation processing chamber ions are implanted into a workpiece. The high voltage unit includes an ion source unit for generating the ions, and a beam transport unit provided between the ion source unit and the implantation processing chamber. The high-voltage power supply system applies a potential to the high voltage unit under any one of a plurality of energy settings. The high-voltage power supply system includes a plurality of current paths formed such that a beam current flowing into the workpiece is returned to the ion source unit, and each of the plurality of energy settings is associated with a corresponding one of the plurality of current paths. 1. An ion implantation apparatus comprising:an implantation processing chamber for implanting ions into a workpiece;a high voltage unit comprising an ion source unit for generating the ions, and a beam transport unit provided between the ion source unit and the implantation processing chamber; anda high-voltage power supply system configured to apply a potential to the high voltage unit under any one of a plurality of energy settings, whereinthe high-voltage power supply system comprises a plurality of current paths formed such that a beam current flowing into the workpiece is returned to the ion source unit, and each of the plurality of energy settings is associated with a corresponding one of the plurality of current paths.2. The ion implantation apparatus according to claim 1 , whereinthe plurality of energy settings comprises a first energy setting suitable for transport of a low energy ion beam, and a second energy setting suitable for transport of a high energy ion beam, andthe plurality of current paths comprises a first current path formed such that a beam current flowing from the low energy ion beam to the workpiece is returned to the ion source unit.3. The ion ...

ION IMPLANTATION APPARATUS, BEAM PARALLELIZING APPARATUS, AND ION IMPLANTATION METHOD

An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens. 1. An ion implantation apparatus comprising:a beam parallelizing unit comprising an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction; anda power supply unit configured to operate the beam parallelizing unit under one of a plurality of energy settings, whereinthe plurality of energy settings includes a first energy setting suitable for transport of a low energy ion beam, and a second energy setting suitable for transport of a high energy ion beam,the power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting and to generate a potential difference in at least the deceleration lens under the first energy setting, anda curvature of the deceleration lens is smaller than a curvature of the acceleration lens.2. The ion implantation apparatus according to claim 1 , whereinthe power supply unit applies a second acceleration voltage to the acceleration lens and applies no potential difference in the deceleration lens under the second energy setting ...

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

A beam modifier device is provided that includes scattering portions in which particles vertically impinging on an exposure surface of the beam modifier device are deflected from a vertical direction. A total permeability for the particles changes along a lateral direction parallel to the exposure surface.