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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 3261. Отображено 100.
22-03-2012 дата публикации

Surface wave plasma cvd apparatus and film forming method

Номер: US20120067281A1
Автор: Masayasu Suzuki
Принадлежит: Shimadzu Corp

A surface wave plasma CVD apparatus includes a waveguide that is connected to a microwave source and formed of a plurality of slot antennae; a dielectric member that introduces microwaves emitted from the plurality of slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a substrate-like subject of film formation such that the subject of film formation passes a film formation processing region that faces the dielectric member; and a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject of film formation.

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Номер записи: 1
19-04-2012 дата публикации

Microwave plasma source and plasma processing apparatus

Номер: US20120090782A1
Автор: Taro Ikeda, Yuki Osada
Принадлежит: Tokyo Electron Ltd

There are provided a microwave plasma source and a plasma processing apparatus capable of improving uniformity of a plasma density distribution within a processing chamber by controlling positions of nodes and antinodes of a standing wave of microwave within the processing chamber not to be fixed. The microwave plasma source 2 includes a microwave supply unit 40. The microwave supply unit 40 includes multiple microwave introducing devices 43 each introducing microwave into the processing chamber; and multiple phase controllers 46 for adjusting phases of the microwaves inputted to the microwave introducing devices 43. Here, the phases of the microwaves inputted to the microwave introducing devices 43 are adjusted by fixing an input phase of the microwave inputted to one of two adjacent microwave introducing devices 43 while varying an input phase of the microwave inputted to the other microwave introducing device 43 according to a periodic waveform.

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Номер записи: 2
31-05-2012 дата публикации

Electron beam generating apparatus

Номер: US20120133281A1
Автор: Chang Bum Kim, In Soo Ko, Ju Ho Hong, Sung Ik Moon, Sung Ju Park, Yong Woon PARK
Принадлежит: Academy Industry Foundation of POSTECH

An apparatus for generating an electron beam is disclosed to reduce emittance of an electron beam. The apparatus includes: a housing including a rear portion where an electron beam is generated, a front portion having an electron beam discharge hole for discharging the electron beam to the exterior, and a side portion connecting the rear portion and the front portion, the side portion having a first hole and an opposite side portion, facing the first hole, having a second hole in order to reduce asymmetry of an electric field caused by the first hole; and a waveguide installed on the side portion to supply an electromagnetic wave to the interior of the housing through the first hole, wherein the electron beam is generated by laser incident to the interior of the housing and accelerated by the electromagnetic wave supplied to the interior of the housing.

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Номер записи: 3
14-06-2012 дата публикации

Surface wave plasma cvd apparatus and layer formation method

Номер: US20120148763A1
Автор: Masayasu Suzuki
Принадлежит: Shimadzu Corp

A surface wave plasma CVD apparatus, includes: a waveguide ( 3 ) that is connected to a microwave source ( 2 ), and in which a plurality of slot antennas (S) are formed thereof; a dielectric plate ( 4 ) for conducting microwaves emitted from the plurality of slot antennas (S) into a plasma processing chamber ( 1 ) so that a surface wave plasma is produced; an insulating shield member (lb) that is arranged so as to surround a layer formation processing region (R) in which the surface wave plasma is produced; and a gas ejection portion ( 52 ) that ejects process material gas into the layer formation processing region (R).

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Номер записи: 4
21-06-2012 дата публикации

Microwave antenna for generating plasma

Номер: US20120153825A1
Автор: Bong Ju Lee, Hyun Jong You, Soo Ouk Jang, Yong Ho Jung
Принадлежит: Korea Basic Science Institute KBSI

The present invention relates to the new structure antenna to create the uniform large area plasma using microwave. The microwave antenna to create the plasma of present invention comprises the waveguide, main body of antenna and the coaxial structure connecting part which connects said waveguide and said main body of antenna electrically, the main body of antenna comprises the conductive block in donut shape forming multiple slots, and notches are formed between the multiple slots of the conductive block and multiple permanent magnets are inserted into the notches. The multiple slots can be formed by passing through the inside and outside of the conductive block and the multiple slots can be formed with repetitive square wave pattern.

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Номер записи: 5
28-06-2012 дата публикации

Plasma processing apparatus and substrate processing method

Номер: US20120160809A1
Автор: Kiyotaka Ishibashi, Osamu Morita
Принадлежит: Tokyo Electron Ltd

A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32 . The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47 . The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.

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Номер записи: 6
26-07-2012 дата публикации

Plasma processing apparatus

Номер: US20120186747A1
Автор: Hitoshi Tamura, Kenji Maeda, Kouichi Yamamoto, Masaru Izawa, Shinji OBAMA, Yoshihide Kihara
Принадлежит: Hitachi High Technologies Corp

A plasma processing apparatus is provided with a processing chamber which is arranged inside a vacuum container and plasma is formed inside, a circular shape plate member made of a dielectric material arranged above the processing chamber through which an electric field is transmitted, and a cavity part having a cylindrical shape arranged above the plate member and the electric field is introduced inside, in which the cavity part is provided with a first cylindrical cavity part having a cylindrical shape cavity with a large diameter and having the plate member as the bottom face, a second cylindrical cavity part arranged above to be connected to the first cylindrical cavity part and having a cylindrical shape cavity with a small diameter, and a step portion for connecting these between the first and the second cylindrical cavity parts.

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Номер записи: 7
04-10-2012 дата публикации

Plasma processing apparatus and microwave introduction device

Номер: US20120247676A1
Автор: Atsushi Ueda, Junichi Kitagawa, Shigenori Ozaki, Yutaka Fujino
Принадлежит: Tokyo Electron Ltd

A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

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Номер записи: 8
13-12-2012 дата публикации

Crystalline silicon film forming method and plasma cvd apparatus

Номер: US20120315745A1
Автор: Daisuke Katayama, Masayuki Kohno, Minoru Honda, Toshio Nakanishi
Принадлежит: Tokyo Electron Ltd

A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as Si n H 2n+2 (n is equal to or larger than 2) by the microwave; and depositing a crystalline silicon film on the surface of the processing target substrate by performing the plasma CVD process with the plasma.

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Номер записи: 9
24-01-2013 дата публикации

Plasma nitriding method

Номер: US20130022760A1
Автор: Masaki Sano, Toshinori Debari
Принадлежит: Tokyo Electron Ltd

A plasma nitriding method includes performing a high nitrogen-dose plasma nitriding process on an object having an oxide film by introducing a processing gas containing a nitrogen gas into a processing chamber of a plasma processing apparatus and generating a plasma containing a high nitrogen dose; and performing a low nitrogen-dose plasma nitriding process on the object by generating a plasma containing a low nitrogen dose. After the performing the high nitrogen-dose plasma nitriding process is completed, a plasma seasoning process is performed in the chamber by generating a nitrogen plasma containing a trace amount of oxygen by introducing a rare gas, a nitrogen gas and an oxygen gas into the chamber and setting a pressure in the chamber in a range from about 532 Pa to 833 Pa and a volume flow rate ratio of the oxygen gas in all the gases in a range from about 1.5% to 5%.

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Номер записи: 10
31-01-2013 дата публикации

Plasma processing method and plasma processing apparatus

Номер: US20130029492A1
Автор: Masakazu Miyaji, Masaki Fujii, Michikazu Morimoto, Tetsuo Ono, Yoshiharu Inoue
Принадлежит: Hitachi High Technologies Corp

A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

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Номер записи: 11
07-02-2013 дата публикации

Plasma resonant cavity

Номер: US20130033342A1
Автор: Gaoqing Lei, Shanpei Liu, Shengya LONG, Songtao Lu, Yongtao LIU, Zhenyu Li
Принадлежит: Yangtze Optical Fibre and Cable Co Ltd

A plasma resonant cavity, including a cylindrical resonant cavity casing, cutoff waveguides, and a waveguide inlet circumferentially formed on the cylindrical resonant cavity casing. The cutoff waveguides are arranged at two ends of the cylindrical resonant cavity casing and employ a movable end cover structure. An intermediate through hole is formed on each cutoff waveguide with the movable end cover structure, and a raised round table is arranged on an inner end surface of the cutoff waveguide and configured with the resonant cavity.

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Номер записи: 12
14-02-2013 дата публикации

Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies

Номер: US20130037755A1
Автор: Stanford R. Ovshinsky
Принадлежит: Stanford R. Ovshinsky

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon.

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Номер записи: 13
21-03-2013 дата публикации

Microwave plasma reactors

Номер: US20130069531A1
Автор: David King, Donnie K. Reinhard, Jes Asmussen, Jing Lu, Kadek W. Hemawan, M. Kagan Yaran, Michael Becker, Thomas Schuelke, Timothy Grotjohn, Yajun Gu
Принадлежит: Fraunhofer USA Inc, Michigan State University MSU

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

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Номер записи: 14
20-06-2013 дата публикации

Apparatus for performing a plasma chemical vapour deposition process

Номер: US20130152858A1
Автор: Igor Milicevic, Johannes Antoon Hartsuiker, Mattheus Jacobus Nicolaas Van Stralen
Принадлежит: Draka Comteq BV

The invention relates to an apparatus for performing a plasma chemical vapour deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity extending in a circumferential direction around a cylindrical axis. The resonator is further provided with side wall portions bounding the resonant cavity in the cylindrical direction, and with a slit configuration extending in a circumferential direction around the cylindrical axis providing access from the resonant cavity radially inwardly. Further, the slit configuration includes slit sections that are mutually offset in the cylindrical direction.

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Номер записи: 15
10-10-2013 дата публикации

Stable surface wave plasma source

Номер: US20130264938A1
Автор: Jianping Zhao, Lee Chen, Merritt Funk, Ronald V. BRAVENEC
Принадлежит: Tokyo Electron Ltd

A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

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Номер записи: 16
24-10-2013 дата публикации

Multi discharging tube plasma reactor

Номер: US20130278135A1
Автор: Dai-Kyu CHOI
Принадлежит: Dai-Kyu CHOI

A plasma reactor having multi discharging tubes is disclosed, through which activated gas containing ion, free radical, atom and molecule is generated through plasma discharging, and different process gases are injected into multi discharging tubes in which solid, power and gas, etc., are plasma-treated with the activated gas to perform processes including cleaning process for semiconductor, and a plasma state can be maintained even at low power.

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Номер записи: 17
19-12-2013 дата публикации

Microwave power delivery system for plasma reactors

Номер: US20130334964A1
Автор: Christopher John Howard Wort, John Robert Brandon
Принадлежит: Element Six Ltd

(EN): A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors ( 8 ), the microwave power delivery system comprising: a tuner ( 14 ) configured to be coupled to a microwave source ( 4 ) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction ( 18 ) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink ( 20 ), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.

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Номер записи: 18
06-03-2014 дата публикации

Plasma microwave resonant cavity

Номер: US20140062300A1
Автор: Jinyan Zhang, Ruichun Wang, Xianhui Xia
Принадлежит: Yangtze Optical Fibre and Cable Co Ltd

A plasma microwave resonant cavity used for a plasma chemical vapor deposition (PCVD) apparatus comprises a resonant cavity housing and a waveguide device connected with the cavity housing. Two ends of the cavity housing are provided with coaxial through-holes along the axial direction of the cavity. A glass inner liner is arranged through the through-holes at the two ends, and runs through a cavity body and the through holes at the two ends. The glass inner liner comprises a glass cylinder and glass stop rings arranged at the two ends of the glass cylinder. One or two ends of the glass cylinder are provided with external threads. The glass stop rings are connected with the ends of the glass cylinder ( 1 ) by screw holes formed on the glass stop rings.

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Номер записи: 19
01-01-2015 дата публикации

ISOLATION OF MICROWAVE SOURCES THROUGH BELLOWS

Номер: US20150002019A1
Автор: Johnston Benjamin M., KURITA Shinichi
Принадлежит: Applied Materials, Inc.

A bellows which forms a flexible coupling between the lid of a processing chamber and an antenna feed through. One embodiment provides an apparatus comprising a chamber body having a chamber lid, a feed through extending through the chamber lid, an antenna coupled to and extending through the feed through to an internal volume of the chamber body, and a bellows comprising a first flange, the first flange coupled to the feed through, a second flange, the second flange coupled to the chamber lid, and a center portion extending between the first flange and the second flange. 1. An apparatus , comprising:a chamber body having a chamber lid;a feed through extending through the chamber lid;an antenna coupled to and extending through the feed through to an internal volume of the chamber body; and a first flange, the first flange coupled to the feed through;', 'a second flange, the second flange coupled to the chamber lid; and', 'a center portion extending between the first flange and the second flange., 'a bellows comprising2. The apparatus of claim 1 , wherein the feed through is not coupled directly to the chamber lid.3. The apparatus of claim 1 , wherein the bellows forms a vacuum seal between the feed through and the chamber lid.4. The apparatus of claim 1 , wherein the center portion comprises a flexible region adapted to expand in response a tensile force between the first and second flanges and contract in response to a compressive force between the first and second flanges.5. The apparatus of claim 1 , further comprising a dielectric layer disposed around the antenna claim 1 , wherein the dielectric layer is coupled to the feed through.6. The apparatus of claim 5 , wherein the dielectric layer forms a vacuum seal with the feed through.7. The apparatus of claim 5 , further comprising an end cap coupled to the feed through claim 5 , the end cap forming a vacuum seal with the feed through and the dielectric layer.8. The apparatus of claim 1 , further comprising:a ...

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Номер записи: 20
07-01-2021 дата публикации

Diamond-like carbon synthesized by atmospheric plasma

Номер: US20210002759A1
Автор: Jinqiu Zhang, Masahiro Osugi, Xiaobo Huang
Принадлежит: Samu Technology LLC

A system includes a structure including an upper chamber linked to a lower chamber, the upper chamber including a gas inlet configured to enable a gas to enter the upper chamber, the lower chamber including a plasma outlet, a microwave generator configured to deliver a microwave to the upper chamber causing atoms in the gas to ionize to generate a charged particle microwave plasma, a hollow cathode centrally positioned within the lower chamber and an anode surrounding an interior wall of the lower chamber, and a power source for generating power, the power flowing between the anode and the hollow cathode causing atoms in the gas to ionize to generate a charged particle hollow cathode plasma.

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Номер записи: 21
13-01-2022 дата публикации

DEVICE FOR COATING CONTAINERS WITH A BARRIER LAYER, AND METHOD FOR HEATING A CONTAINER

Номер: US20220013334A1
Автор: KONRAD Joachim, Kytzia Sebastian
Принадлежит:

The present invention relates to a device for coating containers with a barrier layer having at least one plasma chamber, which encloses at least one treatment space, in which at least one container with a container interior can be inserted and can be positioned on the treatment space, wherein a gas lance is provided which can be introduced into the container interior and which further acts as microwave antenna, with the plasma chamber being designed to be capable at least of partial evacuation and being designed to fill the container interior at least partially with a plasma and a process gas. The device is designed such that the container can be preheated by means of a plasma, more particularly by means of a microwave plasma, using a noble gas which can be introduced into the container interior through the gas lance. 1. A device for coating containers with a barrier layer having at least one plasma chamber , which includes at least one treatment space , and in which at least one container with a container interior can be inserted and positioned on the treatment space , wherein a gas lance is present which can be introduced into the container interior and which furthermore acts as microwave antenna , wherein the plasma chamber is formed to be capable of at least partial evacuation and is set up to fill the container interior at least partially with a plasma and a process gas , wherein the device is formed such that a pre-heating of the container can be carried out by means of a plasma , in particular by means of a microwave plasma , using a noble gas which can be introduced into the container interior via the gas lance.2. The device according to claim 1 , wherein the noble gas is taken from the group Ne claim 1 , Ar claim 1 , Kr and/or Xe; preferably only Ar claim 1 , optionally with residual air claim 1 , is used as noble gas.3. The device according to claim 1 , wherein a heating tunnel is present before the device in the path for conveying the container into it.4 ...

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Номер записи: 22
07-01-2021 дата публикации

MICROWAVE APPLICATOR WITH SOLID-STATE GENERATOR POWER SOURCE

Номер: US20210005430A1
Автор: Kamarehi Mohammad, Keller Olivia, Sanford Colin, Trenholm Ken, Wenzel Kevin
Принадлежит: MKS Instruments, Inc.

A microwave system has a solid-state generator which generates microwave energy and includes at least one control input for receiving a control signal to vary electrically a parameter of the microwave energy. A microwave load receives the microwave energy and produces an effect in response to the microwave energy. A microwave conducting element couples the microwave energy to the microwave load. An impedance match adjusting device is coupled to the microwave conducting element to vary at least one of the parameters of the microwave energy. The effect produced in response to the microwave energy is altered by both electrical variation of the parameter of the microwave energy via the control signal and adjustment of the impedance match adjusting device to vary the parameter of the microwave energy. 1. A microwave plasma system , comprising:a solid-state generator for providing microwave energy characterized by one or more parameters, the solid-state generator having at least one electrical control input for receiving a control signal to vary electrically the one or more parameters of the microwave energy;a plasma applicator for receiving the microwave energy, the plasma applicator comprising a plasma discharge tube in which a plasma is generated in response to the microwave energy, a central longitudinal axis of the plasma discharge tube extending between opposite ends of the plasma discharge tube, the plasma generated in the plasma discharge tube being characterized by a spatial plasma intensity profile distributed longitudinally along the central longitudinal axis and radially from the central longitudinal axis, perpendicular to the central longitudinal axis, toward a radial wall of the plasma discharge tube; anda controller generating the control signal to vary electrically the one or more parameters of the microwave energy, and applying the control signal to the control input of the solid-state generator to vary electrically the one or more parameters of the ...

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Номер записи: 23
03-01-2019 дата публикации

APPARATUS AND METHOD FOR PLASMA SYNTHESIS OF CARBON NANOTUBES

Номер: US20190006151A1
Автор: Koziol Krzysztof Kazimierz, KURPEZA Lukasz, PAUKNER Catharina
Принадлежит: FGV Cambridge Nanosystems Limited

Apparatus and method for plasma synthesis of carbon nanotubes couple a plasma nozzle to a reaction tube/chamber. A process gas comprising a carbon-containing species is supplied to the plasma nozzle. Radio frequency radiation is supplied to the process gas within the plasma nozzle, so as to sustain a plasma within the nozzle in use, and thereby cause cracking of the carbon-containing species. The plasma nozzle is arranged such that an afterglow of the plasma extends into the reaction tube/chamber. The cracked carbon-containing species also pass into the reaction tube/chamber. The cracked carbon-containing species recombine within the afterglow, so as to form carbon nanotubes in the presence of a catalyst. 1. Apparatus for plasma synthesis of carbon nanotubes , comprising:a plasma nozzle coupled to a reaction tube or chamber;means for supplying a process gas to the plasma nozzle, the process gas comprising a carbon-containing species;means for supplying radio frequency radiation to the process gas within the plasma nozzle, so as to sustain a plasma within the nozzle in use, and thereby cause cracking of the carbon-containing species; andmeans for providing a catalyst;wherein the plasma nozzle is arranged such that an afterglow of the plasma extends into the reaction tube/chamber, the cracked carbon-containing species also pass into the reaction tube/chamber, and the cracked carbon-containing species recombine within the afterglow, so as to form carbon nanotubes in the presence of the catalyst.246-. (canceled)47. A method of synthesising carbon nanotubes , the method comprising:coupling a plasma nozzle to a reaction tube or chamber;supplying a process gas to the plasma nozzle, the process gas comprising a carbon-containing species;supplying radio frequency radiation to the process gas within the plasma nozzle, so as to sustain a plasma within the nozzle, and thereby cause cracking of the carbon-containing species; andproviding a catalyst;wherein the plasma nozzle is ...

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Номер записи: 24
03-01-2019 дата публикации

PLASMA GENERATING UNIT AND PLASMA PROCESSING APPARATUS

Номер: US20190006152A1
Автор: Azumaya Yoshikazu, Suzuki Takashi
Принадлежит:

A plasma generating unit capable of improving in-surface uniformity of plasma and a plasma processing apparatus using the same are provided. The plasma generating unit provided in the plasma processing apparatus includes a dielectric window ; a slot plate provided on the dielectric window ; and a coaxial waveguide electrically connected to the slot plate and configured to transmit a microwave. The coaxial waveguide includes an inner conductor ; and an outer conductor configured to surround the inner conductor . The plasma generating unit further includes a pressing component PM configured to elastically press the inner conductor toward the slot plate. 1. A plasma generating unit provided in a plasma processing apparatus , comprising:a dielectric window;a slot plate provided on the dielectric window; anda coaxial waveguide electrically connected to the slot plate and configured to transmit a microwave,wherein the coaxial waveguide comprises:an inner conductor; andan outer conductor configured to surround the inner conductor,wherein the plasma generating unit further comprises a pressing component configured to elastically press the inner conductor toward the slot plate.2. The plasma generating unit of claim 1 , further comprising:a spring provided between the inner conductor and the slot plate.3. The plasma generating unit of claim 1 , further comprising:a wavelength shortening plate guide ring provided on the slot plate;a wavelength shortening plate placed at an inner side of the wavelength shortening plate guide ring such that a position thereof is restricted; anda temperature control jacket provided on the wavelength shortening plate.4. The plasma generating unit of claim 3 , further comprising:a first position fixing pin provided between the dielectric window and the wavelength shortening plate guide ring to be inserted through a positioning hole provided at the slot plate; anda second position fixing pin provided between the temperature control jacket and the ...

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Номер записи: 25
03-01-2019 дата публикации

THE PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20190006153A1
Автор: TAMARI Nanako, Tamura Hitoshi, YASUI Naoki
Принадлежит:

In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused. 1. A plasma processing apparatus comprising:a processing chamber which is disposed inside a vacuum container;a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon;an electric field forming part which forms an electric field supplied into the processing chamber;a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; anda controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval,wherein the wafer is processed while the plasma is repeatedly formed and diffused.2. The plasma processing apparatus according to claim 1 ,wherein the controller decreases the intensity of the magnetic field of the coil after the plasma is formed and a change in intensity of the plasma falls within a predetermined range.3. The plasma processing apparatus according to claim 1 ,wherein the controller increases the ...

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Номер записи: 26
08-01-2015 дата публикации

PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR

Номер: US20150007940A1
Автор: Funazaki Kazunori, KANEKO Kazushi, KATO Hideo
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components. 1. A plasma processing device which processes an object to be processed using plasma , the plasma processing device comprising:a processing container configured to perform a processing by the plasma therein; anda plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves, and the plasma generation mechanism being configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator,wherein the high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator, the signal having a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and having reduced different frequency components.2. The plasma processing device of claim 1 , wherein the high-frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high-frequency ...

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Номер записи: 27
20-01-2022 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20220020569A1
Автор: Hirayama Masaki
Принадлежит:

In an example of an embodiment, a plasma processing apparatus includes a processing container, a stage, an upper electrode, an inlet, and a waveguide device. The stage is provided within the processing container. The upper electrode is provided above the stage, to interpose a space within the processing container. The inlet is configured to introduce high-frequency waves. The high-frequency waves are VHF waves or UHF waves. The inlet is provided at an end of the space in the lateral direction, and extends in a circumferential direction around a central axis of the processing container. The waveguide device is configured to supply high-frequency waves to the inlet. The waveguide device includes a resonator that provides a waveguide. The waveguide of the resonator extends in the circumferential direction around the central axis and extends in the direction in which the central axis extends to be connected to the inlet. 110-. (canceled)11. A plasma processing apparatus comprising:a processing container;a stage provided within the processing container;an upper electrode provided above the stage, to interpose a space within the processing container;an inlet configured to introduce high-frequency waves that are VHF waves or UHF waves, the inlet being provided at an end of the space in a lateral direction and extending in a circumferential direction around a central axis of the processing container; anda waveguide device configured to supply the high-frequency waves to the inlet,wherein the waveguide device includes a resonator that provides a waveguide, andthe waveguide of the resonator extends in the circumferential direction around the central axis and extends in a direction in which the central axis extends to be connected to the inlet.12. The plasma processing apparatus of claim 11 , wherein the waveguide has a tubular shape.13. The plasma processing apparatus of claim 12 , wherein the waveguide includes one end and another end in the direction in which the central ...

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Номер записи: 28
27-01-2022 дата публикации

MICROWAVE OUTPUT DEVICE AND PLASMA PROCESSING APPARATUS

Номер: US20220028661A1
Автор: Ishida Yohei, KANEKO Kazushi, Murai Koichi, Tamura Hajime
Принадлежит:

A device includes a microwave generator configured to generate a microwave having a bandwidth, an output unit, a directional coupler and a measurer. The microwave generator generates a microwave a power of which is pulse-modulated to be a High level and a Low level. A set carrier pitch is set to satisfy a preset condition. The preset condition includes a condition that a value obtained by dividing a set pulse frequency by the set carrier pitch or a value obtained by dividing the set carrier pitch by the set pulse frequency is not an integer and a condition that an ON-time of the High level is equal to or larger than 50%. The microwave generator averages a first High measurement value and a first Low measurement value in a preset moving average time longer than a sum of the ON-time of the High level at a preset sampling interval. 1. A microwave output device , comprising:a microwave generator configured to generate a microwave having a median frequency, a bandwidth and a carrier pitch respectively corresponding to a set frequency, a set bandwidth and a set carrier pitch instructed from a control device, a power of the microwave being pulse-modulated such that a pulse frequency, a duty ratio, a High level and a Low level become a set pulse frequency, a set duty ratio, a set power of High level and a set power of Low level instructed from the control device;an output unit configured to output the microwave propagated from the microwave generator;a first directional coupler configured to output a part of a progressive wave propagated from the microwave generator to the output unit; anda measurer configured to determine a first High measurement value and a first Low measurement value respectively indicating a High level and a Low level of a power of the progressive wave in the output unit, based on the part of the progressive wave outputted from the first directional coupler,wherein a reciprocal of the set carrier pitch becomes a longest cycle among power variation ...

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Номер записи: 29
15-01-2015 дата публикации

MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE

Номер: US20150013907A1
Автор: Fujii Toru, Iwao Toshihiko, SENDA Takahiro
Принадлежит: TOKYO ELECTRON LIMITED

Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a cooling plate. In addition, the microwave plasma processing apparatus includes an intermediate metal body installed on a processing container side of the cooling plate to be spaced apart from the cooling plate so that a spacing between the intermediate metal body and the cooling plate forms a waveguide of microwaves. The intermediate metal body is in contact with the cooling plate at one or plural convex portions arranged to block a portion of the waveguide. Further, the microwave plasma processing apparatus includes a coaxial waveguide configured to supply microwaves to the waveguide, a slot antenna plate configured to radiate microwaves via the waveguide, a dielectric window installed on the processing container side of the slot antenna plate, and a processing container installed to be sealed by the dielectric window. 1. A microwave plasma processing apparatus comprising:a cooling plate;an intermediate metal body installed on a processing container side of the cooling plate to be spaced apart from the cooling plate so that a spacing between the intermediate metal body and the cooling plate forms a waveguide of microwaves, wherein the intermediate metal body is in contact with the cooling plate at one or plural convex portions arranged to block a portion of the waveguide;a coaxial waveguide configured to supply microwaves to the waveguide;a slot antenna plate configured to radiate microwaves via the waveguide;a dielectric window installed on the processing container side of the slot antenna plate; anda processing container installed to be sealed by the dielectric window.2. The microwave plasma processing apparatus of claim 1 , wherein the intermediate metal body is in contact with the cooling plate at one or plural convex portions claim 1 , and includes a donut-concave portion that separate the processing container side surface of the intermediate metal body ...

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Номер записи: 30
15-01-2015 дата публикации

MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE

Номер: US20150013911A1
Автор: Iwao Toshihiko, KANEKO Kazushi
Принадлежит: TOKYO ELECTRON LIMITED

Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the intermediate metal plate. The coaxial waveguide includes an inner conductor, an intermediate conductor and an outer conductor. Each of a space between the inner conductor installed in a hollow portion of the intermediate conductor and the intermediate conductor and a space between the intermediate conductor installed in a hollow portion of the outer conductor and the outer conductor transmits microwaves. A difference between an inner diameter of the outer conductor and an outer diameter of the intermediate conductor is larger than a difference between an outer diameter of the inner conductor and an inner diameter of the intermediate conductor. 1. A microwave plasma processing apparatus comprising:a cooling plate;an intermediate metal plate installed on a processing container side of the cooling plate to be spaced apart from the cooling plate, wherein the intermediate metal plate has a donut-shaped convex portion that separates a processing container side surface of the intermediate metal plate into a center side portion and an outer periphery side portion;a slot plate installed on the processing container side of the intermediate metal plate to be in contact with the convex portion, wherein, on a processing container side surface of the slot plate, the slot plate includes, as slots for radiating microwaves, a first slot formed in a more center side portion than a portion which is in contact with the convex portion and a second slot formed at a more outer periphery side than a portion which is in contact with the;a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the ...

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Номер записи: 31
15-01-2015 дата публикации

MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE

Номер: US20150013912A1
Автор: Fujii Toru, Iwao Toshihiko
Принадлежит: TOKYO ELECTRON LIMITED

A microwave plasma processing apparatus includes an inner slow-wave plate installed above a first slot in an inner waveguide which transmits microwaves to the first slot by transmitting the microwaves in a center side space, which is positioned closer to the center than the convex portion in the space between the slot plate and the intermediate metal body, through the space between the inner conductor and the intermediate conductor. An outer slow-wave plate is installed above a second slot in an outer waveguide which transmits microwaves to the second slot by transmitting the microwaves in an outer periphery side space, which is positioned closer to an outer periphery than the convex portion in the space between the slot antenna plate and the intermediate metal body, sequentially through the space between the intermediate conductor and the outer conductor, and the space between the intermediate metal body and cooling plate. 1. A microwave plasma processing apparatus comprising:a cooling plate;an intermediate metal body installed on a processing container side of the cooling plate to be spaced apart from the cooling plate, wherein the intermediate metal body includes a donut-shaped convex portion that separates the processing container side surface of the intermediate metal body into a center side portion and an outer side portion;a slot plate installed on the processing container side of the intermediate metal body to be in contact with the convex portion, wherein, on the processing container side surface of the slot plate, the slot plate includes, as slots for radiating microwaves, a first slot formed in a more center side portion than a portion which is in contact with the convex portion and a microwave transmission slot formed in a more outer periphery side portion than the portion which is in contact with the convex portion;a coaxial waveguide installed in a through hole which is provided in a center side portion in the intermediate metal body to extend ...

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Номер записи: 32
15-01-2015 дата публикации

Microwave plasma processing apparatus

Номер: US20150013913A1
Автор: Jun Yoshikawa, Toshihiko Iwao
Принадлежит: Tokyo Electron Ltd

A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. The dielectric window includes a first concave portion in a region corresponding to the first slot group of the antenna plate on the facing surface, and a second concave portion in a region corresponding to the second slot group of the antenna plate on the facing surface.

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Номер записи: 33
14-01-2016 дата публикации

FILM FORMING DEVICE, FILM FORMING METHOD, AND FILM FORMING PROGRAM

Номер: US20160013023A1
Автор: KANADA Hideki, KOUSAKA Hiroyuki, SHINODA Kentaro, TAKAOKA Yasuyuki, TAKI Kazunari
Принадлежит:

A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes 1. A film forming device comprising:a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece;a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, anda controller configured to control the microwave supplying unit and the negative voltage applying unit,wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer,wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes,wherein, while supplying of the microwaves by the microwave supplying unit, the controller controls the negative voltage applying unit so that the sheath thickness changes by changing a voltage value of the negative bias voltage to be applied to the workpiece, andwherein, while supplying of the microwaves by the microwave supplying unit, the controller controls the negative ...

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Номер записи: 34
11-01-2018 дата публикации

DOPING METHOD, DOPING APPARATUS, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

Номер: US20180012763A1
Автор: KOBAYASHI Yuuki, Oka Masahiro, SUGIMOTO Yasuhiro, Ueda Hirokazu
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel. 1. A doping method for doping by injecting a dopant into a processing target substrate , the doping method comprising:a plasma doping processing step including setting a value of bias electric power supplied during a plasma doping processing to a predetermined value on premise of a washing processing to be performed after a plasma doping, and generating plasma within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate held on a holding pedestal in the processing vessel.2. The doping method of claim 1 , wherein claim 1 , in the plasma doping processing step claim 1 , the value of the bias electric power is set such that a dopant concentration of a top portion of the processing target substrate and a dopant concentration of a side portion of the processing target substrate are substantially equal to each other when the washing processing is performed after the plasma doping processing.3. A doping apparatus comprising:a processing vessel;a gas supply unit configured to supply a doping gas and an inert gas for plasma excitation to the processing vessel;a holding pedestal disposed within the processing vessel and configured to hold a processing target substrate thereon;a plasma generation mechanism configured to generate plasma within the processing vessel using microwaves; anda controller configured to set a value of bias electric power to a predetermined value on premise of a washing processing to be ...

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Номер записи: 35
15-01-2015 дата публикации

Microwave plasma processing apparatus and microwave supplying method

Номер: US20150015139A1
Автор: Kazushi Kaneko, Satoru Kawakami, Toshihiko Iwao
Принадлежит: Tokyo Electron Ltd

A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value.

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Номер записи: 36
15-01-2015 дата публикации

PLASMA GENERATION DEVICE WITH MICROSTRIP RESONATOR

Номер: US20150015140A1
Автор: Denning Mark, Vahidpour Mehrnoosh
Принадлежит:

A plasma generation device, a system comprising a plasma generation device, and a method of generating plasma and vacuum UV (VUV) photons are described. In a representative embodiment, plasma generation device, comprises: a substrate having a first surface and a second surface; a resonant ring-shaped structure disposed aver the first surface of the substrate, the resonant ring-shaped structure having dimensions selected to support at least one standing wave having more than one electric field maximum along a length of the resonant ring-shaped structure; a ground plane disposed on the second surface of the substrate; and an apparatus configured to provide a gas at locations of the electric field maxima, 1. A plasma generation device , comprising:a substrate having a first surface and a second surface;a resonant ring-shaped structure disposed over the first surface of the substrate, the resonant ring-shaped structure having dimensions selected to support at least one standing wave having more than one electric field maximum along a length of the resonant ring-shaped structure;a ground plane disposed on the second surface of the substrate; andan apparatus configured to provide a gas at locations of the electric field maxima.2. The plasma generation device of claim 1 , further comprising electrode extensions connected to the resonant ring-shaped structure at a location of each of the electric field. maxima.3. The plasma generation device of claim 1 , wherein the resonant ring-shaped structure further comprises a microstrip transmission line.4. The plasma generation device of claim 1 , wherein the apparatus comprises a gas flow element configured to provide ns over each of the locations of the electric field maxima.5. The plasma generation device of claim 1 , further comprising:a plurality of structures, each of which is disposed adjacent the first surface to form respective enclosures that substantially enclose each of the locations of the electric field maxima.6. The ...

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Номер записи: 37
10-01-2019 дата публикации

PLASMA TREATMENT APPARATUS

Номер: US20190013180A1
Автор: HAN Sang Chul, Hong Tae Ki
Принадлежит:

A plasma treatment apparatus, includes a plasma chamber configured to perform a plasma treatment. An upper plate is disposed in an upper part of the plasma chamber. A lower plate is disposed under the upper plate. An antenna is disposed between the upper plate and the lower plate. At least a first portion of the antenna is separated from the upper plate and at least a second portion of the antenna is separated from the lower plate. A coolant path is formed in the antenna, and an inner surface of the coolant path includes a same material as an outer surface of the antenna. 1. A plasma treatment apparatus , comprising:a plasma chamber configured to perform plasma treatment;an upper plate disposed in an upper part of the plasma chamber;an antenna disposed under the upper plate;a lower plate disposed under the antenna;a first metal ring attached to a first surface of the antenna and separating at least a portion of the first surface of the antenna from the upper plate; anda second metal ring attached to a second surface of the antenna and separating at least a portion of the second surface of the antenna from the lower plate,wherein a coolant path, that is configured to pass coolant therethrough, is formed in the antenna.2. The apparatus of claim 1 , wherein the antenna comprises:a first inner circumferential portion defined on an inner side of the first surface; anda first outer circumferential portion surrounding the first inner circumferential portion,wherein the first outer circumferential portion is concentric with the first inner circumferential portion, andwherein the first metal ring contacts the first outer circumferential portion.3. The apparatus of claim 2 , wherein the first inner circumferential portion is separated from the upper plate by the first metal ring and by a first distance.4. The apparatus of claim 3 , wherein the first distance is 0.1 mm to 5 mm.5. The apparatus of claim 2 , wherein the first inner circumferential portion comprises:a first area ...

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Номер записи: 38
14-01-2021 дата публикации

PLASMA DEVICE USING COAXIAL WAVEGUIDE, AND SUBSTRATE TREATMENT METHOD

Номер: US20210013010A1
Автор: NOZAWA Toshihisa, Yoshikawa Jun
Принадлежит:

Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap. 1. A plasma device , comprising:a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts;a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap; anda conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.2. The plasma device according to claim 1 , whereinthe coaxial waveguide has a microwave introduction part and a plurality of end parts, the plurality of end parts being obtained by branching at the plurality of branch parts; andthe stub is provided at a first branch part, the first branch part being a branch part nearest to the microwave introduction part among the plurality of branch parts.3. The plasma device ...

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Номер записи: 39
09-01-2020 дата публикации

MICROWAVE OUTPUT DEVICE AND PLASMA PROCESSING DEVICE

Номер: US20200013587A1
Автор: KANEKO Kazushi, ONUMA Yuji
Принадлежит: TOKYO ELECTRON LIMITED

A device includes a microwave generation unit that averages the first measured values and the second measured values at a predetermined movement average time and a predetermined sampling interval, and controls the microwave such that a value obtained by subtracting the averaged second measured value from the averaged first measured value comes close to the setting power, and in which the predetermined movement average time is 60 μs or less, and a relationship of y≥78.178xis satisfied when the predetermined sampling interval is indicated by x, and the predetermined movement average time is indicated by y. 1. A microwave output device comprising:a microwave generation unit configured to generate a microwave having a center frequency, power, and a bandwidth respectively corresponding to a setting frequency, setting power, and a setting bandwidth for which instructions are given from a controller;an output portion configured to output the microwave propagating from the microwave generation unit;a first directional coupler configured to output parts of travelling waves propagating toward the output portion from the microwave generation unit;a second directional coupler configured to output parts of reflected waves returning to the output portion; anda measurement unit configured to determine first measured values indicating power levels of the travelling waves in the output portion on the basis of the parts of the travelling waves output from the first directional coupler, and determine second measured values indicating power levels of the reflected waves in the output portion on the basis of the parts of the reflected waves output from the second directional coupler,wherein the microwave generation unit averages the first measured values and the second measured values at a predetermined movement average time and a predetermined sampling interval, and controls the microwave such that a value obtained by subtracting the averaged second measured value from the averaged ...

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Номер записи: 40
09-01-2020 дата публикации

RESONANT STRUCTURE FOR ELECTRON CYCLOTRON RESONANT (ECR) PLASMA IONIZATION

Номер: US20200013594A1
Автор: Lane Barton
Принадлежит:

Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system. 1. A method of semiconductor fabrication comprising:receiving a semiconductor substrate on a substrate chuck disposed within a plasma processing chamber;flowing gas into the plasma processing chamber;radiating microwave energy from a transmission element coupled to the plasma chamber towards a source component disposed between the substrate chuck and the transmission element, the source component comprising an array of resonant elements and an array of magnets proximate to the array of resonant elements;forming a resonant circuit between the transmission element and the resonant elements based, at least in part, on an impedance of the resonant elements and frequency of the microwave energy provided by the transmission element;generating an electromagnetic field from the array of resonant elements and a magnetic field from the array of magnets based, at least in part, on forming the resonant circuit;forming plasma proximate to the source component, the plasma is formed based, at least in part, on the electromagnetic field and the magnetic field interacting with the gas in the plasma processing chamber; andtreating the substrate using the plasma.2. The method of claim 1 , wherein the plasma is formed based claim 1 , at least in part claim 1 , on the microwave energy from the transmission element.3. The method of claim 1 , wherein array of magnets comprise groups of two or more ...

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Номер записи: 41
21-01-2016 дата публикации

Method for etching high-k dielectric using pulsed bias power

Номер: US20160020108A1
Автор: Akiteru Ko, Alok Ranjan
Принадлежит: Tokyo Electron Ltd

A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer. The method further includes transferring a pattern formed in the gate layer to the high-k layer using a pulsed bias plasma etching process, and selecting a process condition for the pulsed bias plasma etching process to achieve a silicon recess formed in the substrate having a depth less than 2 nanometer (nm).

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Номер записи: 42
03-02-2022 дата публикации

ION IMPLANTATION SYSTEM AND LINEAR ACCELERATOR HAVING NOVEL ACCELERATOR STAGE CONFIGURATION

Номер: US20220037116A1
Автор: SINCLAIR Frank
Принадлежит: Applied Materials, Inc.

An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy. The linear accelerator may include a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises: a drift tube assembly, arranged to conduct the ion beam; a resonator, electrically coupled to the drift tube assembly; and an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator. As such, the given acceleration stage does not include a quadrupole element. 1. An ion implantation system , comprising:an ion source and extraction system, arranged to generate an ion beam at a first energy; and a drift tube assembly, arranged to conduct the ion beam;', 'a resonator, electrically coupled to the drift tube assembly; and', 'an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator, wherein the given acceleration stage does not include a quadrupole element., 'a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy, wherein the linear accelerator comprises a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises2. The ion implantation system of claim 1 , the linear accelerator comprising at least three acceleration stages.3. The ion implantation system of claim 1 , wherein the plurality of acceleration stages do not include a quadrupole element.4. The ion implantation system of claim 1 , wherein the drift tube assembly comprises a first grounded drift tube claim 1 , an AC drift ...

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Номер записи: 43
03-02-2022 дата публикации

Plasma processing apparatus and plasma processing method

Номер: US20220037124A1
Автор: Hideki Yuasa, Hiroyuki Ikuta, Satoshi Itoh, Soudai EMORI, Yoshiyuki Kondo
Принадлежит: Tokyo Electron Ltd

A plasma processing apparatus for generating plasma from a processing gas using microwaves and performing plasma processing on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed; a plurality of microwave radiation units arranged at a central portion and an outer peripheral portion of a ceiling wall of the processing chamber and configured to radiate microwaves; and a controller configured to complete microwave radiation from the microwave radiation unit in the central portion upon completion of plasma processing of the substrate and then complete microwave radiation from the microwave radiation units in the outer peripheral portion.

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Номер записи: 44
22-01-2015 дата публикации

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

Номер: US20150020735A1
Автор: Vandermeulen Peter F.
Принадлежит:

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot. 1. A plasma deposition apparatus , comprising:a waveguide conduit having a plurality of slots therein, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of slots, said waveguide conduit further comprising secondary slots opposite said plurality of slots;a set of secondary plungers fitted in said secondary slots to amplify radiation emitted through said plurality of slots; andone or more pipes having an outlet end positioned at each of the plurality of slots for transporting material from one or more material sources to the plurality of slots.2. The apparatus of claim 1 , wherein the waveguide conduit has a primary axis extending therethrough claim 1 , and wherein the plurality of slots are located on a side of the waveguide conduit to allow for the passage of the microwaves in a direction generally perpendicular to the primary axis.3. The apparatus of claim 1 , wherein the waveguide conduit has a primary axis extending therethrough claim 1 , and wherein the plurality of slots are oriented at an angle ranging between 0° and 90° to the primary axis.4. The apparatus of claim 1 , wherein at least some of the pipes convey ...

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Номер записи: 45
18-01-2018 дата публикации

Microwave control method

Номер: US20180019103A1
Автор: Jun Yoshikawa, Kazushi Kaneko, Naoki Matsumoto
Принадлежит: Tokyo Electron Ltd

A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method incudes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.

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Номер записи: 46
21-01-2021 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20210020406A1
Автор: KANEKO Kazushi
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus according to an exemplary embodiment includes a chamber, a microwave generator, an antenna, and a coaxial waveguide. The antenna is configured to radiate a microwave into the chamber. The coaxial waveguide is configured to cause a microwave output from the microwave generator to propagate between the microwave generator and the antenna. A diameter d of an outer circumferential surface of an inner conductor and a diameter D of an inner circumferential surface of an outer conductor of each of one or more coaxial tubes configuring the coaxial waveguide satisfy D+d≤76.3 mm, d≥21 mm, and D≥3.71×(R+1)/log(R). R is D/d. 2. The plasma processing apparatus according to claim 1 ,wherein the microwave generator and the antenna are connected to each other via only the coaxial waveguide.3. The plasma processing apparatus according to claim 1 ,wherein a characteristic impedance of the coaxial waveguide is a value other than 50Ω. This application is based on and claims the benefit of priority from Japanese Patent Application No. 2019-133858 filed on Jul. 19, 2019, the entire contents of which are incorporated herein by reference.An exemplary embodiment of the present disclosure relates to a plasma processing apparatus.A plasma processing apparatus is used for plasma processing on a substrate. Japanese Patent Application Laid-Open Publication No. 2018-78010 (hereinafter, referred to as “Patent Literature 1”) discloses a plasma processing apparatus that generates plasma by using a microwave. The plasma processing apparatus disclosed in Patent Literature 1 includes a chamber, an antenna, and a microwave generator. The antenna radiates a microwave into the chamber. The microwave generator and the antenna are connected to each other via a rectangular waveguide tube and a coaxial tube. A converter that converts a mode of a microwave is necessary between the rectangular waveguide tube and the coaxial tube.In one exemplary embodiment, a plasma processing ...

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Номер записи: 47
25-01-2018 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20180025923A1
Автор: Matsumoto Naoki
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator. 1performing a heating processing by the heating member before the plasma processing of irradiating the microwaves for plasma excitation to the processing space is performed;performing the plasma processing after the heating processing is initiated; andstopping the heating processing by the heating member after the plasma processing is initiated.. A method of performing a plasma processing by using a plasma processing apparatus, the plasma processing apparatus including a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots and provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator; and a heating member provided within the slot plate, the method comprising: This application is a divisional of U.S. patent application Ser. No. 14/394,112, filed on Oct. 13, 2014, which is a National Stage Application of PCT/JP2013/063833, filed on May 17, 2013, and also claims priority from Japanese Patent Application No. 2012-114934, filed on May 18, 2012, all of which are incorporated herein by reference.Various aspects and exemplary embodiments of the present disclosure relate to a plasma processing apparatus and a plasma ...

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Номер записи: 48
29-01-2015 дата публикации

Methods and systems for plasma deposition and treatment

Номер: US20150028972A1
Автор: Peter F. Vandermeulen
Принадлежит: Individual

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

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Номер записи: 49
10-02-2022 дата публикации

GASIFICATION DEVICE AND PLASMA SHUTTER WITH A MICROWAVE PLAZMA SLOWING SYSTEM OF THE GASIFICATION DEVICE

Номер: US20220044910A1
Автор: DANYLENKO Anton, FISENKO Petro, SLAVIK Zbynek
Принадлежит: INING S.R.O.

Microwave plasma slowing system for a plasma shutter comprises a waveguide-band transmission for interconnection of the system with a generator, and for letting waves from the generator into the plasma shutter, a bridge band interconnected with the waveguide-band transmission, two parallel band waistlines, interconnected by its one end with the bridge band, where the band waistlines are flat plates, where one of its sides is provided with tenons arranged side by side along the axis of the band waistlines with orientation in a such way, that the tenons arranged on the one side of the first band waistline placed in turns between the tenons arranged on the one side of the second band waistline, where the band waistlines are provided at the other end by mutually separated lockable electromagnetic oscillators. 1. Microwave plasma slowing system for a plasma shutter , comprising:a waveguide-band transmission configured to interconnect the system with a generator, and configured to let waves from the generator into the plasma shutter,a bridge band interconnected with the waveguide-band transmission,two parallel band waistlines, interconnected by its one end with the bridge band,where the band waistlines are flat plates, where one of its sides is provided withtenons arranged side by side along the axis of the band waistlines with orientation in a such way, that the tenons arranged on the one side of the first band waistline are placed in turns between the tenons arranged on the one side of the second band waistline,whereinthe band waistlines are provided at the other end by mutually separated lockable electromagnetic oscillators, where the position of the lockable electromagnetic oscillators defines an exact point of reflection of a waves to perform its maximal amplitude by count up of a direct and a reflected waves, 'and intended for leading the direct waves Y from the bridge band to the lockable electromagnetic oscillators,', 'the band waistlines are broadened in the ...

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Номер записи: 50
10-02-2022 дата публикации

METHOD OF FORMING PLASMA PROCESSING APPARATUS, RELATED APPARATUS, AND METHOD OF FORMING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20220044912A1
Автор: JEANG Eunhee, KIM Kyeonghun, LEE Hyungjoo, LEE Yongseok, MUN Jeongil, PARK Taekyoon, SUN Jongwoo, YANG Seeyub
Принадлежит:

A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface. 1. A method of forming a plasma processing apparatus , the method comprising:providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall; andforming an analysis apparatus connected to the viewport,wherein: an analyzer adjacent to the chamber,', 'a probe connected to the analyzer and aligned with the viewport, and', 'a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and', 'the second surface of the first window has a scattering surface., 'the analysis apparatus includes2. The method as claimed in claim 1 , wherein a roughness of the second surface of the first window is rougher than a roughness of the first surface of the first window.3. The method as claimed in claim 1 , wherein the second surface of the first window has a root mean square roughness of 0.2 μm to 10 μm.4. The method as claimed in claim 1 , wherein the first window includes quartz or glass.5. The method as claimed in claim 1 , wherein at least one of the first surface and the second surface includes a spherical surface.6. The method as claimed in claim 1 , wherein the first window includes a convex lens.7. The method as claimed in ...

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Номер записи: 51
10-02-2022 дата публикации

PULSED-PLASMA DEPOSITION OF THIN FILM LAYERS

Номер: US20220044930A1
Автор: Paul Khokan Chandra
Принадлежит: Applied Materials, Inc.

Examples of the present technology include semiconductor processing methods that may include generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber. The plasma may be generated at a delivered power within a first period of time when plasma power is delivered from a power source operating at a first duty cycle. The methods may further include transitioning the power source from the first duty cycle to a second duty cycle after the first period of time. A layer may be deposited on a substrate in the processing region of the semiconductor processing chamber from the generated plasma. The layer, as deposited, may be characterized by a thickness of 50 Å or less. Exemplary deposition precursors may include one or more silicon-containing precursors, and an exemplary layer deposited on the substrate may include an amorphous silicon layer. 1. A semiconductor processing method comprising:generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber, wherein the plasma is generated at a delivered power within a first period of time, and wherein plasma power is delivered from a power source operating at a first duty cycle;transitioning the power source from the first duty cycle to a second duty cycle after the first period of time; anddepositing a layer on a substrate in the processing region of the semiconductor processing chamber from the generated plasma, wherein the layer as deposited is characterized by a thickness of 50 Å or less.2. The semiconductor processing method of claim 1 , wherein the plasma power has an effective power of less than or about 4 Watts.3. The semiconductor processing method of claim 1 , wherein the first period of time is less than or about 2 seconds.4. The semiconductor processing method of claim 1 , wherein the plasma is maintained for a second period of time at the second duty cycle claim 1 , and wherein the second period of time is longer than the ...

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Номер записи: 52
02-02-2017 дата публикации

Microwave Plasma Source and Plasma Processing Apparatus

Номер: US20170032933A1
Автор: HARA Emiko, Harada Tamotsu, IKEDA Taro
Принадлежит:

There is provided a microwave plasma source for radiating microwaves into a chamber of a plasma processing apparatus to generate surface wave plasma, including: a plurality of microwave radiation mechanisms provided in a ceiling wall of the chamber and configured to radiate microwaves into the chamber; and a perforated plate provided in a high electric field formation region used as a high electric field region when the microwaves are radiated from microwave radiation surfaces of the microwave radiation mechanisms into the chamber and which exists just below the microwave radiation surfaces. The perforated plate has a function of confining surface waves formed just below the microwave radiation surfaces when the microwaves are radiated from the microwave radiation mechanism, in a space surrounded by the microwave radiation surfaces and the perforated plate, and a function of keeping high a power absorption efficiency of plasma generated in the space. 1. A microwave plasma source for radiating microwaves into a chamber of a plasma processing apparatus to generate surface wave plasma , comprising:a plurality of microwave radiation mechanisms provided in a ceiling wall of the chamber and configured to radiate microwaves into the chamber; anda perforated plate provided in a high electric field formation region which becomes a high electric field region when the microwaves are radiated from microwave radiation surfaces of the microwave radiation mechanisms into the chamber and which exists just below the microwave radiation surfaces, the perforated plate having a plurality of holes formed therein, the perforated plate set at a ground potential and made of an electrically conductive material, wherein the perforated plate has a function of confining surface waves formed just below the microwave radiation surfaces when the microwaves are radiated from the microwave radiation mechanism, in a space surrounded by the microwave radiation surfaces and the perforated plate and ...

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Номер записи: 53
31-01-2019 дата публикации

METHOD AND DEVICE FOR PLASMA TREATMENT OF CONTAINERS

Номер: US20190032200A1
Автор: DISTERHOF Alexander, Herbort Michael, Kytzia Sebastian
Принадлежит:

A method and a device for plasma treatment of containers by means of a plurality of treatment segments each having at least one plasma station on a plasma module comprising a plasma wheel, wherein, during an operational malfunction and/or a cut-out in at least one of the plasma stations, the process gas, before being supplied to the plasma station in question, is carried off into the respective plasma chamber and/or the container held therein, by means of at least one bypass line. 1513231740. Method for the plasma treatment of containers () by means of a plasma module () comprising a plurality of plasma stations () on a plasma wheel () , with each plasma station () comprising at least one plasma chamber () having at least one treatment place () , with these steps:{'b': 5', '5', '1', '17', '40', '3, 'inserting and positioning of at least one container () having a container interior (.) in the plasma chamber () on the treatment place () of a corresponding plasma station (),'}{'b': 17', '5', '1, 'at least partial evacuation of the respective plasma chamber () and of the at least one container interior (.),'}{'b': 5', '1', '17', '3, 'at least partial application of a process gas to the container interior (.) inside the at least partially evacuated plasma chamber (), with the at least partial application being simultaneously effected at at least one plasma station () by a central process gas supply,'}{'b': 5', '1, 'providing at least the container interior (.) with an internal coating by means of plasma treatment, and'}{'b': 17', '5', '1', '5, 'after the plasma treatment, carrying out a venting operation in which both the plasma chamber () and the at least one container interior (.) of the container () are at least partially vented, wherein'}{'b': 40', '3', '40', '5', '84, 'in the event of an operational malfunction and/or cut-out in at least one treatment place () of one of the plasma stations (), before the process gas is supplied to the treatment place () and/or to ...

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Номер записи: 54
30-01-2020 дата публикации

DETECTION DEVICE, MICROWAVE OUTPUT DEVICE AND PLASMA PROCESSING APPARATUS

Номер: US20200035462A1
Автор: Ishida Yohei, KANEKO Kazushi
Принадлежит: TOKYO ELECTRON LIMITED

A detection device includes a substrate on which a connector connected to a transmission line for microwaves, a detection circuit configured to convert the microwaves inputted from the transmission line via the connector to a detection value indicating power of the microwaves, and an output port configured to output the detection value obtained by the detection circuit are disposed. The detection device further includes a housing that has a first opening and a second opening and accommodates the substrate in a state where the connector is inserted into the first opening and the output port is inserted into the second opening. The detection device further includes a first sealing member provided at the first opening of the housing to seal a periphery of the connector; and a second sealing member provided at the second opening of the housing to seal a periphery of the output port. 1. A detection device comprising:a substrate on which a connector connected to a transmission line for microwaves, a detection circuit configured to convert the microwaves inputted from the transmission line via the connector to a detection value indicating power of the microwaves, and an output port configured to output the detection value obtained by the detection circuit are disposed;a housing that has a first opening and a second opening and accommodates the substrate in a state where the connector is inserted into the first opening and the output port is inserted into the second opening;a first sealing member provided at the first opening of the housing to seal a periphery of the connector; anda second sealing member provided at the second opening of the housing to seal a periphery of the output port.2. The detection device of claim 1 , wherein a moisture absorbent is disposed in the housing.3. The detection device of claim 1 , wherein the substrate has a sealing film that seals an end surface of the substrate where the connector claim 1 , the detection circuit claim 1 , and the output ...

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Номер записи: 55
30-01-2020 дата публикации

METHOD AND APPARATUS FOR FORMING HARD MASK FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

Номер: US20200035491A1
Автор: FUJINO Yutaka
Принадлежит:

A hard mask film forming method includes preparing a substrate in which an etching target film is formed on a base. The hard mask film forming method further includes forming a hard mask film on the substrate while controlling film forming parameters such that tensile stress is set as initial film stress and the tensile stress monotonously increases from a bottom surface of the hard mask film toward an upper surface of the hard mask film. 1. A hard mask film forming method , comprising:preparing a substrate in which an etching target film is formed on a base; andforming a hard mask film on the substrate while controlling film forming parameters such that a tensile stress is set as an initial film stress and the tensile stress monotonously increases from a bottom surface of the hard mask film toward an upper surface of the hard mask film.215. The hard mask film forming method of claim 1 , wherein said forming the hard mask film is performed by a chemical vapor deposition.3. The hard mask film forming method of claim 2 , wherein said forming the hard mask film is performed by a plasma chemical vapor deposition.4. The hard mask film forming method of claim 3 , wherein plasma in the plasma chemical vapor deposition is microwave plasma.5. The hard mask film forming method of claim 3 , wherein the film forming parameter is at least one of a flow rate of a film forming gas claim 3 , a pressure claim 3 , and a plasma density.65. The hard mask film forming method of claim 4 , wherein the film forming parameter is at least one of a flow rate of a film forming gas claim 4 , a pressure claim 4 , and a plasma density.7. The hard mask film forming method of claim 1 , wherein the hard mask film is an SiN film.8. A semiconductor device manufacturing method comprising:preparing a substrate in which an etching target film is formed on a base;forming a hard mask film on the substrate while controlling film forming parameters such that a tensile stress is set as an initial film stress ...

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Номер записи: 56
09-02-2017 дата публикации

A microwave plasma reactor for manufacturing synthetic diamond material

Номер: US20170040145A1
Автор: Ben Llewlyn Green, Geoffrey Alan Scarsbrook, Ian Friel, John Robert Brandon, Michael Andrew Cooper
Принадлежит: Element Six Technologies Ltd

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

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Номер записи: 57
18-02-2021 дата публикации

PEALD TITANIUM NITRIDE WITH DIRECT MICROWAVE PLASMA

Номер: US20210050186A1
Автор: AuBuchon Joseph, Chen Hanhong, Dan Arkaprava, KIM Kyoung Ha, Kraus Philip A.
Принадлежит: Applied Materials, Inc.

A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface. 1. A method of depositing titanium nitride , the method comprising sequentially exposing a substrate surface to a titanium precursor and a direct microwave plasma generated from a plasma gas.2. The method of claim 1 , wherein the direct microwave plasma is generated within 20 mm of the substrate surface.3. The method of claim 1 , wherein the direct microwave plasma is generated by one or more microwave sources comprising an applicator with a dielectric resonant cavity.4. The method of claim 3 , wherein a distance between the one or more microwave sources and the substrate surface is less than or equal to 50 mm.5. The method of claim 1 , wherein the plasma gas comprises ammonia or nitrogen gas (N).6. The method of claim 4 , wherein the plasma gas further comprises one or more of argon or hydrogen.7. The method of claim 1 , wherein the microwave plasma power delivered to plasmas gas is greater than or equal to 500 W.8. The method of claim 1 , wherein the substrate surface is maintained at a temperature of less than or equal to 600° C.9. A method of depositing titanium nitride claim 1 , the method comprising sequentially exposing a substrate surface to a titanium precursor claim 1 , ammonia gas claim 1 , and a direct microwave plasma generated from a plasma gas.10. The method of claim 9 , wherein the direct microwave plasma is generated by one or more microwave sources comprising an applicator with a dielectric resonant cavity.11. The method of claim 9 , wherein the plasma gas comprises argon.12. The method of claim 11 , wherein the plasma gas further comprises hydrogen gas (H) claim 11 , ammonia or nitrogen ...

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Номер записи: 58
18-02-2021 дата публикации

Microwave Plasma Source For Spatial Plasma Enhanced Atomic Layer Deposition (PE-ALD) Processing Tool

Номер: US20210050187A1
Автор: BERA KALLOL, Dzilno Dmitry A., FORSTER John C., Garachtchenko Alexander V., KUDELA Jozef, LI Xiaopu, Shervegar Avinash, SUBRAMANI ANANTHA K., Tanaka Tsutomu
Принадлежит: Applied Materials, Inc.

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed. 1. A plasma source assembly comprising:a powered electrode having a first end and a second end defining a length and having an elongate axis extending along the length of the powered electrode, the powered electrode having a thickness and width;a ground electrode on a first side of the powered electrode, the ground electrode spaced from the powered electrode by a distance;a dielectric on a second side of the powered electrode, the dielectric and ground electrode enclosing the powered electrode, the dielectric having an inner face adjacent the powered electrode and an outer face opposite the inner face;a first microwave generator electrically coupled to the first end of the powered electrode through a first feed; anda second microwave generator electrically coupled to the second end of the powered electrode through a second feed.2. The plasma source assembly of claim 1 , wherein the ground electrode is spaced from the powered electrode by a second dielectric.3. The plasma source assembly of claim 1 , wherein the powered electrode is a flat conductor.4. The plasma source assembly of claim 1 , wherein one or more of the width of the powered electrode changes from the first end to the second end claim 1 , the distance from powered electrode to the ground electrode changes from first end to second end; or a distance from powered electrode to the outer face of the dielectric changes from first end to the second end.5. The plasma source assembly of claim 4 , ...

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Номер записи: 59
18-02-2021 дата публикации

SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS

Номер: US20210050188A1
Автор: Holland John, MARSH RICHARD A., McChesney Jon, PATERSON Alexander Miller, Sriraman Saravanapriyan
Принадлежит:

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-HO and can provide at least about 30 cfm of air. 1. A plasma processing device comprising:a dielectric window comprising a plasma exposed surface and an air exposed surface;a vacuum chamber coupled with the dielectric window, wherein the vacuum chamber and the plasma exposed surface of the dielectric window cooperate to enclose a plasma processing gas;an energy source disposed adjacent to the dielectric window, wherein the energy source transmits electromagnetic energy through the dielectric window and into the vacuum chamber such that the electromagnetic energy forms an elevated temperature region in the dielectric window and transforms at least a portion of the plasma processing gas into a plasma; andat least one air amplifier in fluid communication with the air exposed surface of the dielectric window; anda plenum in fluid communication with the air exposed surface of the dielectric window and the at least one air amplifier to receive cooling air from the at least one air amplifier, wherein the plenum is divided into a plurality of segments by partition walls that are shared by adjacent segments and each segment comprises at least one inlet and at least one outlet that outputs air directly into a pressure region partially surrounded by the plenum, wherein the at least one air amplifier is ...

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Номер записи: 60
26-02-2015 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20150053346A1
Автор: KATO Kazuyuki, Matsumoto Naoki, SEO Yasuhiro, Yoshikawa Wataru
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed. 1. A plasma processing apparatus comprising:a processing chamber which has a dielectric window provided at a ceiling portion thereof, and whose inside can be maintained airtightly, the dielectric window transmitting a microwave therethrough, said processing chamber including a processing space therein;a mounting table provided inside the processing chamber to mount a substrate thereon;a slot antenna which is provided on an upper surface of the dielectric window of the processing chamber, and through which a microwave is introduced into the processing space of the processing chamber through slots of the slot antenna;a microwave generator which generates a microwave of a predetermined frequency;a microwave introduction path which guides the microwave generated by the microwave generator to the slot antenna;a processing gas introduction unit which introduces a processing gas supplied from a processing gas source into the processing chamber; andan exhaust unit which exhausts the processing gas introduced into the processing chamber, through an exhaust port provided below an upper surface of the substrate mounted ...

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Номер записи: 61
25-02-2021 дата публикации

MICROWAVE REACTOR SYSTEM ENCLOSING A SELF-IGNITING PLASMA

Номер: US20210053829A1
Автор: Anzelmo Bryce H., COOK Daniel, Kalluri Ranjeeth, Stowell Michael W., Tanner David
Принадлежит: Lyten, Inc.

This disclosure provides a reactor system that includes a microwave energy source that generates a microwave energy, a field-enhancing waveguide (FEWG) coupled to the microwave source. The FEWG includes a field-enhancing zone having a cross-sectional area that decreases along a length of the FEWG. The field-enhancing zone includes a supply gas inlet that receives a supply gas, a reaction zone that generates a plasma in response to excitation of the supply gas by the microwave energy, a process inlet that injects a raw material into the reaction zone, and a constricted region that retains a portion of the plasma and combines the plasma and the raw material in response to the microwave energy within the reaction zone. An expansion chamber is in fluid communication with the constricted region facilitates expansion of the plasma. An outlet outputs a plurality of carbon-inclusive particles derived from the expanded plasma and the raw material. 1. A reactor system comprising:a microwave energy source configured to generate a microwave energy; a supply gas inlet configured to receive a supply gas;', 'a reaction zone configured to generate a plasma in response to excitation of the supply gas by the microwave energy;', 'a process inlet configured to inject a raw material into the reaction zone; and', 'a constricted region configured to retain at least some of the generated plasma within the reaction zone, the constricted region further configured to combine the plasma and the raw material in response to microwave energy within the constricted region;, 'a field-enhancing waveguide (FEWG) coupled to the microwave energy source, the FEWG including a field-enhancing zone having a cross-sectional area that decreases along a length of the FEWG, the field-enhancing zone comprisingan expansion chamber in fluid communication with the constricted region and configured to expand the plasma; andan outlet configured to output a plurality of carbon-inclusive particles derived from the ...

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Номер записи: 62
03-03-2022 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20220068606A1
Автор: FURUYA Haruhiko, IKEDA Taro, KAMATA Eiki
Принадлежит:

There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna. 1. A plasma processing apparatus comprising:a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves;a dielectric window that separates the processing space from the combining space;an antenna unit having a plurality of antennas configured to radiate the electromagnetic waves to the combining space and functioning as a phased array antenna;an electromagnetic wave output unit configured to output the electromagnetic waves to the antenna unit;a stage on which the substrate is placed in the processing space;a gas supply unit configured to supply a gas for atomic layer deposition (ALD) film formation to the processing space; anda controller configured to control the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.2. The plasma processing apparatus of claim 1 , wherein the gas supply unit supplies a first gas and a second gas ...

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Номер записи: 63
03-03-2022 дата публикации

WAFER PROCESSING APPARATUS AND WAFER PROCESSING METHOD USING THE SAME

Номер: US20220068659A1
Автор: AN SANGJIN, CHOI HOSEOP, JEONG CHANYEONG, Kang Sunggil, SHIN DONGKYU
Принадлежит:

A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

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Номер записи: 64
26-02-2015 дата публикации

Method for forming conductive film

Номер: US20150056381A1
Автор: Hidenori Miyoshi, Hiroki Kondo, Hirotaka TOYODA, Hitoshi Itoh, Keigo Takeda, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Yusuke Kubota
Принадлежит: Nagoya University NUC, Tokyo Electron Ltd

A method for forming a conductive film on a substrate includes forming a precursor-containing film on the substrate; and irradiating plasma of a treatment gas to the precursor-containing film by an atmospheric pressure plasma treatment device, removing the organic substances and forming a conductive film from the metallic fine particles or the metallic compounds, the atmospheric pressure plasma treatment device including: a microwave generator, a hollow waveguide, a gas supply device, and an antenna portion configured to discharge to the outside, whereby the treatment gas being converted to plasma by the microwaves, the plasma thus generated being irradiated to the precursor-containing film on the substrate, and a hydrogen radical density of the plasma at a position spaced apart 7 mm from the slot holes being equal to or higher than 2×10 14 /cm 3 .

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Номер записи: 65
14-02-2019 дата публикации

Microwave Reactor For Deposition or Treatment of Carbon Compounds

Номер: US20190051495A1
Автор: Chen Guannan, Khan Adib M., Liang Qiwei, Nemani Srinivas D., Pisharody Gautam, Ying Chentsau, ZHOU JIE
Принадлежит:

A plasma reactor for processing a workpiece includes a chamber having a dielectric window, a workpiece support to hold a workpiece in the chamber, a rotary coupling comprising a stationary stage configured to be coupled to a microwave source and a rotatable stage having an axis of rotation, a microwave antenna and overlying the dielectric window of the chamber, a rotary actuator to rotate the microwave antenna, and a process gas distributor including a gas distribution ring surrounding the workpiece support. The microwave antenna includes at least one conduit coupled to the rotary stage. The gas distribution ring including a cylindrical chamber liner separating a circular conduit from the chamber and a plurality of apertures extending radially through the liner to connect the conduit to the chamber. 1. A plasma reactor for processing a workpiece comprising:a chamber having a dielectric window;a workpiece support to hold a workpiece in the chamber;a rotary coupling comprising a stationary stage configured to be coupled to a microwave source and a rotatable stage having an axis of rotation;a microwave antenna overlying the dielectric window of the chamber, the microwave antenna including at least one conduit coupled to the rotatable stage;a rotary actuator to rotate the microwave antenna; anda process gas distributor including a gas distribution ring surrounding the workpiece support, the gas distribution ring including a cylindrical chamber liner separating a circular conduit from the chamber and a plurality of apertures extending radially through the liner to connect the conduit to the chamber.2. The plasma reactor of claim 1 , wherein the plurality of apertures are distributed with uniform angular spacing around the cylindrical chamber liner.3. The plasma reactor of claim 1 , wherein the circular conduit extends uninterrupted around the cylindrical chamber liner.4. The plasma reactor of claim 1 , comprising a vacuum pump coupled to the circular conduit.5. The ...

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Номер записи: 66
25-02-2021 дата публикации

Large area microwave plasma cvd apparatus and corresponding method for providing such deposition

Номер: US20210057190A1
Автор: Justas ZALIECKAS
Принадлежит: VESTLANDETS INNOVASJONSSELSKAP AS

A large area microwave plasma chemical vapour deposition, LA MPCVD reactor apparatus and method for large area microwave chemical vapour deposition, comprising a reactor chamber adapted to provide a plasma region in an interior of the reactor chamber by electromagnetic energy at a first frequency, and a CRLH waveguide section adapted to operate with an infinite wavelength at the first frequency and having in a wall a coupler means arranged to couple electromagnetic energy from an interior of the CRLH waveguide section to the interior of the reactor chamber.

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Номер записи: 67
25-02-2021 дата публикации

REACTOR SYSTEM COUPLED TO AN ENERGY EMITTER CONTROL CIRCUIT

Номер: US20210057191A1
Автор: Anzelmo Bryce H., Pham Tung Van, Riso Thomas, Stowell Michael W.
Принадлежит: Lyten, Inc.

A microwave energy source that generates a microwave energy is disclosed. The microwave energy source has an on-state and an off-state. A control circuit is coupled to the microwave energy source and includes an output to generate a control signal that adjusts a pulse frequency of the microwave energy. A voltage generator applies a non-zero voltage to the microwave energy source during the off-state. A frequency and a duty cycle of the non-zero voltage is based on a frequency and a duty cycle of the control signal. A waveguide is coupled to the microwave energy source. The waveguide has a supply gas inlet that receives a supply gas, a reaction zone that generates a plasma, a process inlet that injects a raw material into the reaction zone, and an outlet that outputs a powder based on a mixture of the supply gas and the raw material within the plasma. 1. A reactor system comprising:a microwave energy source configured to generate a microwave energy, the microwave energy source having an on-state and an off-state;a control circuit coupled to the microwave energy source and including an output to generate a control signal configured to at least partially adjust a pulse frequency of the microwave energy;a voltage generator configured to apply a non-zero voltage to the microwave energy source during the off-state, wherein a frequency and a duty cycle of the non-zero voltage is based on a frequency and a duty cycle of the control signal; and a supply gas inlet configured to receive a supply gas;', 'a reaction zone configured to generate a plasma in response to excitation of the supply gas by the microwave energy;', 'a process inlet configured to inject a raw material into the reaction zone; and', 'an outlet configured to output a carbon-containing powder based on a mixture of the supply gas and portions of the raw material within the plasma., 'a field-enhancing waveguide (FEWG) coupled to the microwave energy source and including a field-enhancing zone having a cross- ...

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Номер записи: 68
05-03-2015 дата публикации

Microwave plasma reactors and substrates for synthetic diamond manufacture

Номер: US20150061191A1
Автор: Alexander Lamb CULLEN, Carlton Nigel Dodge, Charles Simon James Pickles, Christopher John Howard Wort, Geoffrey Alan Scarsbrook, John Robert Brandon, Joseph Michael Dodson, Paul Nicolas Inglis, Steven Edward Coe, Timothy Peter Mollart
Принадлежит: Element Six Ltd

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

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Номер записи: 69
21-02-2019 дата публикации

Microwave output device and plasma processing apparatus

Номер: US20190057844A1
Автор: Ishida Yohei, KANEKO Kazushi
Принадлежит: TOKYO ELECTRON LIMITED

A device includes a microwave generation unit that generates a microwave having a bandwidth, an output unit, a directional coupler, and a measurement unit. The microwave generation unit generates a microwave of which power is pulse-modulated to have a high level and a low level. The measurement unit determines a first high measured value and a first low measured value respectively indicating a high level and a low level of power of travelling waves in the output unit on the basis of parts of the travelling waves output from the directional coupler. The microwave generation unit controls high level power of the pulse-modulated microwave on the basis of and averaged first high measured value and high level setting power, and controls low level power of the pulse-modulated microwave on the basis of an averaged first low measured value and low level setting power. 1. A microwave output device comprising:a microwave generation unit configured to generate a microwave having a center frequency and a bandwidth respectively corresponding to a setting frequency and a setting bandwidth instructed by a controller, the microwave having power pulse-modulated such that a pulse frequency, a duty ratio, a high level and a low level respectively corresponding to a pulse frequency, a setting duty ratio, high level setting power and low level setting power instructed by the controller;an output unit configured to output the microwave propagating from the microwave generation unit;a first directional coupler configured to output parts of travelling waves propagating from the microwave generation unit to the output unit; anda measurement unit configured to determine a first high measured value and a first low measured value respectively indicating a high level and a low level of power of the travelling waves in the output unit on the basis of the parts of the travelling waves output from the first directional coupler, averages the first high measured value and the first low measured ...

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Номер записи: 70
05-03-2015 дата публикации

METHOD OF SELECTIVELY REMOVING A REGION FORMED OF SILICON OXIDE AND PLASMA PROCESSING APPARATUS

Номер: US20150064922A1
Автор: Kitamura Akinori, OHTAKE Hiroto, Suzuki Eiji
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region. 1. A method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon , the method comprising:performing a plurality of sequences, each sequence including:forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, andremoving the denatured region within the processing container,wherein a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container prior to the forming of the denatured region.2. The method of claim 1 , wherein claim 1 , in the removing of the denatured region claim 1 , the workpiece is heated within the processing container.3. The method of claim 1 , wherein claim 1 , in the removing of the denatured region claim 1 , the workpiece is exposed to plasma of a rare gas which is generated within the processing ...

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Номер записи: 71
05-03-2015 дата публикации

METHOD FOR ETCHING ORGANIC FILM AND PLASMA ETCHING DEVICE

Номер: US20150064924A1
Автор: MATSUOKA Hironori, Takaba Hiroyuki
Принадлежит: TOKYO ELECTRON LIMITED

In a method for etching an organic film according to an embodiment, a target object that has an organic film is set in a processing chamber. Then, a processing gas containing COS gas and Ogas is supplied to the processing chamber and a microwave for plasma excitation is supplied to the inside of the processing chamber to etch the organic film. 1. A method for etching an organic film , comprising:preparing in a processing chamber a target object having an organic film; and{'sub': '2', 'etching the organic film by supplying a processing gas including COS gas and Ogas into the processing chamber and supplying a microwave for plasma excitation into the processing chamber.'}2. The method of claim 1 , wherein the target object includes a substrate and a multilayer film formed on the substrate claim 1 , the multilayer film having a patterned resist film and the organic film formed between the resist film and the substrate.3. The method of claim 2 , wherein in the etching the organic film claim 2 , the processing gas further includes Ngas.4. The method of claim 2 , wherein in the etching the organic film claim 2 , a pressure in the processing chamber is controlled to a range from 20 mTorr to 100 mTorr.5. The method of claim 2 , wherein the multilayer film has a Si anti-reflection coating film provided between the resist film and the organic film claim 2 , andthe method further comprises, before the etching the organic film, etching the Si anti-reflection coating film by supplying a gas including a fluorocarbon-based gas and COS gas into the processing chamber and supplying a microwave into the processing chamber.6. A plasma etching device comprising:a processing chamber;a gas supply unit configured to supply a processing gas into the processing chamber;a microwave generating unit; andan antenna, connected to the microwave generating unit, configured to supply a microwave for plasma excitation into the processing chamber,{'sub': '2', 'wherein the gas supply unit is ...

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Номер записи: 72
20-02-2020 дата публикации

ANTENNA, PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

Номер: US20200058468A1
Автор: FUKANO Shohei, KAWADA Yuki, KONDO Hiroyuki, Koyama Koji, Matsumoto Naoki, MINAKAWA Takashi, SENDA Takahiro, Takahashi Kazuki, Yoshikawa Jun
Принадлежит: TOKYO ELECTRON LIMITED

An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis. 1. An antenna comprising:a dielectric window having a first surface and a second surface extending on a side opposite to the first surface, the second surface having an annular recessed surface extending around a central axis and recessed toward the first surface side, and a flat surface surrounded by the recessed surface;a slot plate provided on the first surface;a dielectric plate provided on the slot plate;a heat transfer member made of metal, having an upper surface and a lower surface opposing to each other, and sandwiching the dielectric plate between the lower surface and the slot plate;a cooling jacket provided on the heat transfer member; anda heater provided between the heat transfer member and the cooling jacket,wherein the upper surface includes a plurality of first regions and a second region,the cooling jacket is mounted on the plurality of first regions,the second region is recessed further toward the lower surface side than the plurality of first regions,the heater is mounted on the second region, andeach of the plurality of first regions is provided at a position at least partially overlapping the ...

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Номер записи: 73
02-03-2017 дата публикации

Plasma-enhanced atomic layer deposition system with rotary reactor tube

Номер: US20170062191A1
Автор: Hawryluk Andrew M., Zafiropoulo Arthur W.
Принадлежит: Ultratech, Inc.

Systems and methods for coating particles using PE-ALD and a rotary reactor tube are disclosed. The reactor tube is part of a reactor tube assembly that can rotate and move axially so that it is operably disposed relative to a plasma-generating device. The plasma-generating device has an active state that generates a plasma from a precursor gas and an inactive state that passes the precursor gas without forming a plasma. The reactor tube resides in a chamber that has an open position for accessing the reactor tube and a closed position that supports a vacuum. An output end of the plasma-generating device resides immediately adjacent or within an input section of the reactor tube. This configuration avoids the need for an active portion of the plasma-generating device residing adjacent an outer surface of the reactor tube. 1. A system for performing plasma-enhance atomic layer deposition (PE-ALD) of particles using at least first and second precursor gases , comprising:a chamber having top and bottom sections that define a chamber interior, the chamber configured such that the top and bottom sections have an open position that provides access to the chamber interior and a closed position wherein the chamber interior holds a vacuum;a reactor tube assembly operably arranged relative to the chamber, the reactor tube assembly including a reactor tube that resides within the chamber interior and having a central axis, an outer surface, an interior, an input section, a center section that contains the particles, and an output section that includes at least one aperture in the outer surface, the reactor tube assembly being configured to rotate the reactor tube about the central axis;a gas supply system that includes at least first and second precursor gases;a plasma-generating device arranged within the chamber interior and adjacent or at least partially within the input section of the reactor tube along the central axis of reactor tube, the plasma-generating device having ...

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Номер записи: 74
17-03-2022 дата публикации

SYSTEM FOR GROWTH OF ONE OR MORE CRYSTALLINE MATERIALS

Номер: US20220084793A1
Автор: BHANDARI Rajneesh, Sharda Tarun
Принадлежит:

The invention provides a system for growth of one or more crystalline materials, specifically diamonds. The system comprises a microwave generator integrated with a pressure controller and an Optical Emission Spectrometer (OES) to form an Integrated Microwave Generator System (IMGS). The OES provides a real-time feedback loop to an IMGS controller based on microwave plasma input from a microwave plasma reactor, to control one or more parameters (power, pressure, power density, and pulsed power) in a closed loop and maintain required proposition of plasma constituents for the growth of diamonds in the microwave plasma reactor. The OES monitors real-time concentration of plasma constituents just above the growing surface of diamonds and feeds the real-time information to the IMGS controller to automatically adjust power density to maintain the concentration of plasma constituents on the growing surface of diamonds. 1. A system for growing one or more crystalline materials , the system comprising:a microwave plasma reactor;a microwave generator;an optical emission spectrometer (OES); anda pressure controller, the OES and the pressure controller being integrated with the microwave generator to form an Integrated Microwave Generator System (IMGS), the IMGS further comprising an IMGS controller,wherein the OES provides a real-time feedback loop to the IMGS controller based on microwave plasma input from the microwave plasma reactor, to control at least one parameter in a closed loop and maintain required proposition of plasma constituents for the growth of the one or more crystalline materials in the microwave plasma reactor, wherein the parameter is at least one of a power, pressure, power density, and pulsed power.2. The system of claim 1 , wherein the one or more crystalline materials comprise at least one of Diamonds claim 1 , Carbon Nitride claim 1 , Boron Nitride claim 1 , Silicon Nitride claim 1 , Gallium Nitride claim 1 , Silicon claim 1 , Silicon Dioxide claim 1 ...

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Номер записи: 75
28-02-2019 дата публикации

ETCHING METHOD AND ETCHING APPARATUS

Номер: US20190067031A1
Автор: Kitamura Akinori, Shimizu Yusuke, Takahashi Masahiko
Принадлежит: TOKYO ELECTRON LIMITED

An etching method includes loading, first and second supplying, removing and etching steps. In the loading step, a target object is loaded into a chamber. In the first supply step, a first gas containing carbon, hydrogen and fluorine is supplied into the chamber. In the modification step, plasma of the first gas is generated to modify a surface of a mask film and a surface of an organic film which is not covered with the mask film. In the second supply step, a second gas for etching the organic film is supplied into the chamber. In the removal step, a modified layer formed on the surface of the organic film is removed by applying a first high frequency bias power. In the etching step, the organic film below the modified layer is etched by applying a second high frequency bias power lower than the first high frequency bias power. 1. An etching method comprising:a loading step of loading a target object including a base film, a first organic film and a mask film that are laminated into a chamber and mounting the target object on a stage in the chamber;a first supply step of supplying a first gas containing carbon, hydrogen and fluorine into the chamber;a modification step of generating plasma of the first gas in the chamber and modifying a surface of the mask film and a surface of the first organic film which is not covered with the mask film;a second supply step of supplying a second gas for etching the first organic film into the chamber;a removal step of removing a modified layer formed on the surface of the first organic film which is not covered with the mask film by applying a first high frequency bias power to the stage and generating plasma of the second gas in the chamber; andan etching step of etching the first organic film below the removed modified layer by applying a second high frequency bias power lower than the first high frequency bias power to the stage and generating plasma of the second gas in the chamber.2. The etching method of claim 1 , wherein ...

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Номер записи: 76
08-03-2018 дата публикации

CVD REACTOR AND METHOD FOR NANOMETRIC DELTA DOPING OF DIAMOND

Номер: US20180068850A1
Автор: Butler James E
Принадлежит:

An apparatus and method for creating nanometric delta doped layers in epitaxial diamond includes providing a dummy gas load with gas impedance equivalent to the reactor, and switching gas supplied between the reactor and the gas dummy load without stopping either flow, thereby enabling rapid flow and rapid gas switching without turbulence. An atomically smooth, undamaged substrate can be prepared, preferably in the (100) plane, by etching the surface after polishing to remove subsurface damage. A gas phase chemical getter reactant such as hydrogen disulfide can be used to suppress incorporation of residual boron into the intrinsic layers. Embodiments can produce interfaces between doped and mobile layers that provide at least 100 cm/Vsec carrier mobility and 10cmsheet carrier concentration. 1. An epitaxial CVD reactor for growing delta-doped layers on diamond substrates , the reactor comprising:a reaction chamber configured to enable a flow of gas from an inlet thereof through an interior thereof;a substrate support located within the reaction chamber and configured for supporting a diamond substrate on a surface thereof;a plasma generator configured to excite the gas so as to surround the substrate with a gas plasma;a first gas source;a second gas source;a dummy gas load configured to allow gas from one of the gas sources to flow therethrough, the dummy gas load being configured to present a dummy gas flow impedance to a gas source that is equivalent to a reactor gas flow impedance of the reaction chamber;a gas manifold configured to direct a flow from one of the gas sources to the reaction chamber while directing a flow from the other of the gas sources to the dummy gas load;a gas switch configured to switch the gas flows between the reaction chamber and the dummy gas load, while maintaining both gas flows; anda switch controller configured to control switching by the gas switch of the gas flows.2. The reactor of claim 1 , wherein the reaction chamber is a fused ...

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Номер записи: 77
27-02-2020 дата публикации

PHASED ARRAY MODULAR HIGH-FREQUENCY SOURCE

Номер: US20200066490A1
Автор: Amormino Christian, Chua Thai Cheng, Dzilno Dmitry A., KRAUS Philip Allan
Принадлежит:

Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module. 1. A modular high-frequency emission source , comprising: an oscillator module;', 'an amplification module; and', 'an applicator; and, 'a plurality of high-frequency emission modules, wherein each high-frequency emission module comprisesa phase controller communicatively coupled to each oscillator module.2. The modular high-frequency emission source of claim 1 , wherein the applicator of each high-frequency emission module is part of a phased array.3. The modular high-frequency emission source of claim 2 , wherein the phase controller controls a phase relationship of electromagnetic radiation generated by the oscillator modules in order to form an electromagnetic radiation pattern emitted by the phased array.4. The modular high-frequency emission source of claim 3 , wherein the electromagnetic radiation pattern is a static pattern.5. The modular high-frequency emission source of claim 3 , wherein the electromagnetic radiation pattern is a dynamic pattern.6. The modular high-frequency emission source of claim 1 , wherein the high-frequency is a microwave frequency.7. The modular high-frequency emission source of claim 1 , wherein the high-frequency is 0.1 MHz to 300 GHz.8. A modular high-frequency emission source claim 1 , comprising: an oscillator module;', 'an amplification module; and, 'a plurality of high-frequency emission ...

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Номер записи: 78
11-03-2021 дата публикации

PLASMA PROCESSING APPARATUS, ELECTROSTATIC ATTRACTION METHOD, AND ELECTROSTATIC ATTRACTION PROGRAM

Номер: US20210074522A1
Автор: Matsuyama Shoichiro, Sasaki Yasuharu, Tamaru Naoki
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched. 1. A plasma processing apparatus comprising:a processing chamber configured to perform a plasma processing using plasma;a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion;a focus ring disposed on the focus ring placing portion;a first electrode and a second electrode both disposed inside the focus ring placing portion;a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; anda controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.2. The plasma processing apparatus according to claim 1 , wherein the controller is further configured to control the DC power source such that the respective polarities of the first DC voltage and the second DC voltage are switched before a migration of charge between the placing table and the focus ring is generated.3. The plasma processing apparatus according to claim 2 , wherein a switching period of the polarity is ...

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Номер записи: 79
11-03-2021 дата публикации

Methods and apparatus for dynamical control of radial uniformity with two-story microwave cavities

Номер: US20210074539A1
Автор: Denis Ivanov, Dmitry Lubomirsky, Hideo Sugai, Lance Scudder, Satoru Kobayashi
Принадлежит: Applied Materials Inc

Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

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Номер записи: 80
07-03-2019 дата публикации

PLASMA PROBE DEVICE AND PLASMA PROCESSING APPARATUS

Номер: US20190074166A1
Автор: FURUKI Kazuhiro, IKEDA Taro, KAMATA Eiki, KOMATSU Tomohito, MIYASHITA Hiroyuki, Osada Yuki, Saito Susumu, SATO Mikio
Принадлежит:

A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space. 1. A plasma probe device comprising:an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space;an electrode connected to the antenna unit; anda dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side,wherein a surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.2. The plasma probe device of claim 1 , wherein a leading end portion of the antenna unit has a disc shape claim 1 , and a ratio of a dimension in a depth direction of the dielectric support portion to a diameter of the leading end portion is set within a range from 0.44 to 0.54.3. The plasma probe device of claim 1 , wherein at least one of a recess or a protrusion is formed at a front end surface of the antenna unit.4. The plasma probe device of claim 1 , wherein the front end surface of the antenna unit is curved in a concave shape or in a convex shape.5. The plasma ...

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Номер записи: 81
15-03-2018 дата публикации

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

Номер: US20180076009A1
Автор: Vandermeulen Peter F.
Принадлежит:

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot. 1. A plasma deposition apparatus , comprising:a waveguide conduit having a plurality of primary slots therein located on one side of the waveguide conduit, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of primary slots, said waveguide conduit further comprising a plurality of secondary slots, each of said secondary slots being aligned with and on an opposite side of said waveguide conduit from a different one of said plurality of primary slots, said waveguide conduit further comprising a primary plunger adjustably mounted in the waveguide conduit to create a standing microwave in the waveguide conduit, said standing microwaves having maxima in microwave power at a location of said primary and secondary slots;a set of secondary plungers fitted in said secondary slots, wherein each secondary plunger includes an opening extending therethrough, and wherein each secondary plunger in a given secondary slot is movable in a direction toward or away from a primary slot aligned with said given secondary slot to direct radiation emitted through said plurality of primary slots; andone or more pipes extending through the ...

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Номер записи: 82
24-03-2022 дата публикации

CYLINDRICAL CAVITY WITH IMPEDANCE SHIFTING BY IRISES IN A POWER-SUPPLYING WAVEGUIDE

Номер: US20220093364A1
Автор: Kobayashi Satoru, LUBOMIRSKY DMITRY, Park Soonam, Sugai Hideo, Tran Toan
Принадлежит:

A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate. 1. A plasma reactor comprising:a workpiece processing chamber including a workpiece support to hold a workpiece in a first plane;a cylindrical microwave cavity that overlies the workpiece processing chamber, the cylindrical microwave cavity including a floor that is parallel to the first plane and separates the cylindrical microwave cavity from the workpiece processing chamber and includes a plurality of apertures for microwave energy to pass into the workpiece processing chamber, a ceiling, a cylindrical sidewall, and exactly two microwave input ports in the cylindrical sidewall of said cylindrical microwave cavity, the two microwave input ports including a first input port and a second input port spaced apart by an oblique azimuthal angle;a microwave source having a microwave frequency and having a pair of microwave source outputs; and{'claim-text': ['a microwave input end coupled to a respective one of the microwave source outputs,', 'a microwave output end coupled to a respective one of the first and second input ports,', 'a coupling aperture plate at the output end, the coupling aperture plate having a rectangular coupling aperture therethrough, and', 'an iris plate between the coupling aperture plate and the microwave input end, the iris plate having a ...

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Номер записи: 83
12-06-2014 дата публикации

MICROWAVE RADIATION ANTENNA, MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS

Номер: US20140158302A1
Автор: FUJINO Yutaka, IKEDA Taro, Kasai Shigeru, KOMATSU Tomohito, MIYASHITA Hiroyuki, Osada Yuki, TANIHARA Akira
Принадлежит: TOKYO ELECTRON LIMITED

A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave. 1. A microwave radiation antenna that radiates a microwave generated in a microwave generation mechanism and transmitted through a microwave transmission line into a chamber in a plasma processing apparatus , the plasma processing apparatus forming a surface wave plasma in the chamber to perform plasma processing , the antenna comprising:an antenna body having a microwave radiation surface, and made of conductive material;a processing gas inlet configured to introduce a processing gas into the antenna body;a gas diffusion space configured to diffuse the processing gas in the antenna body;a plurality of gas outlets provided in the antenna body, and configured to discharge the processing gas diffused in the gas diffusion space into the chamber;a plurality of slots provided, corresponding to the microwave transmission line, in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets, each of the slots being configured to radiate the microwave from an end portion disposed at the microwave radiation surface side; andan annular ...

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Номер записи: 84
14-03-2019 дата публикации

METHOD AND DEVICE FOR THE PLASMA PROCESSING OF CONTAINERS

Номер: US20190076560A1
Автор: Kytzia Sebastian, Singur Igor, VORWERK Juergen Franz
Принадлежит:

The invention relates to a method and an apparatus for the plasma treatment of containers. The essential aspect according to the method according to the invention is that, after the plasma treatment at the plasma station and before the container is filled, at least the container interior of the container is at least partially ventilated with a sterilization medium, i.e. is loaded with a sterilization medium. 15. A method for the plasma treatment of containers () , in which{'b': 5', '5', '1', '17', '3, 'at least one container () with a container interior (.) is inserted into a plasma chamber () of a plasma station () and positioned,'}{'b': 17', '5', '1, 'the plasma chamber () and the at least one container interior (.) are at least partially evacuated,'}{'b': 5', '1', '5', '17, 'at least the one container interior (.) of the container () inside the at least partially evacuated plasma chamber () is provided with an internal coating by means of plasma treatment, and'}{'b': 17', '5', '1', '5', '5', '17', '5', '1', '5', '5', '1, 'the plasma treatment is followed by a ventilation step, in which both the plasma chamber () and the at least one container interior (.) of the container () are at least partially ventilated, wherein after the plasma treatment and before the filling of the container () in the plasma chamber () at least the container interior (.) of the at least one container () is loaded with a vaporous sterilization medium such that in the ventilation step at least the container interior (.) is at least partially ventilated with the sterilization medium in the form of gas, vapour or mist.'}25151. The method according to claim 1 , wherein the ventilation of the container interior (.) with sterilization medium is effected such that during the ventilation step a sterilization medium is used at least once in the container interior (.).31232. The method according to claim 1 , wherein the ventilation by means of the sterilization medium is effected in the area of an ...

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Номер записи: 85
05-03-2020 дата публикации

ANTENNA DEVICE, RADIATION METHOD OF ELECTROMAGNETIC WAVES, PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD

Номер: US20200075292A1
Автор: ITO Ayako, KAWADA Yuki, Koyama Koji, Matsumoto Naoki, SENDA Takahiro
Принадлежит: TOKYO ELECTRON LIMITED

In one exemplary embodiment, a second waveguide is connected to an upper wall of a first waveguide and communicates with the first waveguide, a dielectric window is in contact with a lower wall of the first waveguide, a first inner conductor penetrates an upper wall, is electrically connected with the upper wall, and extends along the direction of a tube axis from an inside of the first waveguide to an inside of a third waveguide, the third waveguide is connected to the lower wall on the dielectric window side and communicates with the first waveguide, a first opening end of the third waveguide is connected to the dielectric window, and a drive device is connected to the first inner conductor, and is configured to drive the first inner conductor in the direction of the tube axis. 1. An antenna device configured to radiate electromagnetic waves , the antenna device comprising:a first waveguide;a second waveguide;a third waveguide;a dielectric window;a first inner conductor; anda drive device,wherein the second waveguide is connected to an upper wall of the first waveguide and communicates with the first waveguide,the dielectric window is in contact with a lower wall of the first waveguide,the first waveguide is provided between the dielectric window and the second waveguide, and extends in a direction crossing a tube axis of the second waveguide,the first inner conductor penetrates the upper wall, is electrically connected with the upper wall, and extends along a direction of the tube axis from an inside of the first waveguide to an inside of the third waveguide,a first end of the first inner conductor is positioned at a center of the third waveguide, in a surface crossing the tube axis,the third waveguide is connected to the lower wall on the dielectric window side and communicates with the first waveguide,a first opening end of the third waveguide is connected to the dielectric window, andthe drive device is connected to the first inner conductor, and is configured ...

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Номер записи: 86
18-03-2021 дата публикации

MICROWAVE PLASMA DEVICE

Номер: US20210084743A1
Автор: Spitzl Ralf
Принадлежит:

A microwave plasma device includes a treatment space and a number of two or more microwave semiconductors. The microwave semiconductors are attached to the treatment space in such a way that the microwaves of a microwave semiconductor only interfere with the microwaves of other microwave semiconductors when in the treatment space. 110-. (canceled)1121121144278. A microwave plasma device , comprising a treatment space () configured as a resonator structure and a number of two or more microwave semiconductors () , wherein the microwave semiconductors () are attached to the treatment space () in such a way that the microwaves of each one of the microwave semiconductors only interfere with the microwaves of other microwave semiconductors () when in the treatment space , and in that output coupling of the microwaves from the microwave semiconductors () is effected via , in each case , an antenna () , and in that the microwave plasma device is configured in such a way that the microwaves are fed from the antennas () into the treatment space () via , in each case , a further coupling element () and a further antenna arrangement comprising antennas ().12. A microwave plasma device according to claim 11 , wherein the microwaves are coupled out from at least one microwave semiconductor via a rod antenna claim 11 , wherein a rod antenna is preferably configured as an extension of the inner conductor of the claim 11 , in particular coaxial claim 11 , output-coupling means coupling out from the microwave semiconductor.1378. A microwave plasma device according to claim 11 , wherein the microwave plasma device comprises rectangular claim 11 , oval or round waveguides and/or couplers as further coupling elements () into which the microwaves are initially coupled claim 11 , and in that the antennas () of the further antenna arrangement claim 11 , from which the microwaves are coupled into the treatment space claim 11 , are preferably slot antennas claim 11 , rod antennas or hole ...

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Номер записи: 87
14-03-2019 дата публикации

HIGH-POWER SOLID-STATE MICROWAVE GENERATOR FOR RF ENERGY APPLICATIONS

Номер: US20190080886A1
Автор: Kaplan Kenneth
Принадлежит:

A microwave generating system includes a modular architecture which is configurable to provide power output from under 1-kilowatt to over 100-kilowatts. The various power levels are achieved by combining the RF outputs of multiple RF power amplifiers in a corporate structure. The system can be used on any ISM band. Each system component incorporates a dedicated embedded microcontroller for high performance real-time control response. The components are connected to a high speed digital data bus, and are commanded and supervised by a control program running on a host computer. 1. A solid state microwave generating system arranged in a corporate structure , comprising:an exciter unit providing a signal;a microwave power amplifier module driven at least in part by the signal of the exciter unit, said microwave power amplifier comprising a plurality of power transistors operatively connected in parallel;each of said power modules having a dedicated high speed microcontroller;wherein a plurality of power modules are operatively connected in parallel with independent outputs or a using an output combiner to provide a single common output to allow the system to be scaled up to any output power amount desired, wherein the independent outputs or combined outputs are connected to a load through a directional coupler for receiving an output from the microwave power amplifier unit, and wherein the output is directed towards a load; andwherein the directional coupler samples the forward and reflected power output of the amplifier which is provided to high speed wide dynamic range RF detectors within the exciter unit to adjust the drive level of the microwave power amplifier unit.2. The system of claim 1 , wherein each power module comprises a high speed embedded microcontroller claim 1 , a plurality of high speed high dynamic range RF detectors receiving sampled forward and reflected power samples from the directional coupler and calculating the return loss claim 1 , and for ...

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Номер записи: 88
02-04-2015 дата публикации

Microwave plasma generating device and method for operating same

Номер: US20150091442A1
Автор: Mai Joachim, SCHLEMM Hermann
Принадлежит:

A microwave plasma generating device has a plasma chamber. A microwave generating device is provided outside of the plasma chamber, and the microwaves are coupled into the plasma chamber via a microwave in-coupling device. The microwave in-coupling device has an inner conductor which leads into the plasma chamber through a chamber wall of the plasma chamber, an insulating tube which encloses the inner conductor and separates the inner conductor from an interior of the plasma chamber, and an outer conductor which leads into the plasma chamber through the chamber wall and which is coaxial to the inner conductor. The outer conductor has an outer conductor end in the plasma chamber. The inner and outer conductors form a microwave line, an outlet of microwaves out of the microwave line is provided in the plasma chamber to generate microwave plasma in the interior of the plasma chamber. 118-. (canceled)19. A microwave plasma generating device , comprising:a plasma chamber having chamber walls;at least one microwave generating device for generating microwaves disposed outside of said plasma chamber;a microwave in-coupling device with which the microwaves are coupable into said plasma chamber, said microwave in-coupling device having an inner conductor leading into said plasma chamber through at least one of said chamber walls of said plasma chamber, an insulating tube enclosing said inner conductor and separating said inner conductor from an interior of said plasma chamber, and at least one outer conductor with at least one outer conductor end leading into said plasma chamber through at least one of said chamber wall, said at least one outer conductor being coaxial to said inner conductor but is not provided over an entire circumference of said inner conductor, said inner conductor and said at least one outer conductor form a microwave line and an outlet of microwaves out of the microwave line in said plasma chamber to generate microwave plasma in said interior of said ...

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Номер записи: 89
25-03-2021 дата публикации

MODULAR REACTOR FOR MICROWAVE PLASMA-ASSISTED DEPOSITION

Номер: US20210087676A1
Автор: DES PORTES François, GICQUEL Alix
Принадлежит:

The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device. 1. A microwave plasma-assisted modular deposition reactor for manufacturing synthetic diamond , said reactor comprising:a microwave generator configured to generate microwaves, the frequency of which is between 300 MHz and 3000 MHz,a resonant cavity formed, at least in part, by cylindrical inner walls of a reactor enclosure,a gas inlet system adapted to supply gases within the resonant cavity,a gas output module adapted to remove said gases from the resonant cavity,a wave coupling module adapted to transfer the microwaves from the microwave generator to the resonant cavity in order to allow the formation of a plasma,a growth support present in the resonant cavity, andat least three modulation elements, said modulation elements each being selected from:a crown adapted to be positioned between a first enclosure part and a second enclosure part in order to change a shape and/or volume of the resonant cavity, and a seal system, allowing for the ...

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Номер записи: 90
12-03-2020 дата публикации

PLASMA PROCESSING DEVICE

Номер: US20200083026A1
Автор: Ichino Takamasa, NAKAMOTO Kazunori, Sato Kohei, Yokogawa Kenetsu
Принадлежит:

A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit. 1. A plasma processing device , comprising:a vacuum container;a mounting table that includes an electrode base material where a sample subject to processing is mounted inside the vacuum container, a susceptor ring that is formed of an insulating material that covers an outer peripheral portion of the electrode base material, and an insulation ring that is covered by the susceptor ring, is disposed to surround an outer periphery of the electrode base material, and has a thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material;a first high frequency power applying unit that applies a first high frequency power to the electrode base material of the mounting table;a second high frequency power applying unit that applies a second high frequency power to the thin film electrode formed on the insulation ring;a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; anda control unit that controls the first high frequency power applying unit, the second high frequency power ...

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Номер записи: 91
30-03-2017 дата публикации

Method and apparatus for treating substrate

Номер: US20170087602A1
Автор: Janghee Lee, Jin Woo Choi, Jinwoo Nam, Sunrae Kim, Young Hak PARK
Принадлежит: Semes Co Ltd

The present disclosure relates to a method for treating a substrate. A method for treating a substrate includes a chamber cleaning step. In the chamber cleaning step a treatment space is cleaned by supplying a cleaning fluid. The cleaning fluid is generated by chemical reaction of a first gas and a second gas by applying plasma while supplying the first gas and the second gas which is different from the first gas into the inside of the process chamber.

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Номер записи: 92
21-03-2019 дата публикации

GRAPHENE STRUCTURE FORMING METHOD AND GRAPHENE STRUCTURE FORMING APPARATUS

Номер: US20190085457A1
Автор: IFUKU Ryota, MATSUMOTO Takashi
Принадлежит:

A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function. 1. A graphene structure forming method for forming a graphene structure , comprising:preparing a target substrate; andforming a graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.2. The method of claim 1 , wherein the surface of the target substrate is an insulator or a semiconductor.3. The method of claim 2 , wherein the forming the graphene structure is performed under a pressure in a range of 1.33 to 667 Pa.4. The method of claim 1 , wherein the surface of the target substrate is a metal and is not subjected to an activation treatment.5. The method of claim 4 , wherein the forming the graphene structure is performed under a pressure in a range of 1.33 to 400 Pa.6. The method of claim 1 , wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C. claim 1 , a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min.7. The method of claim 1 , wherein the graphene structure is composed of only graphene formed parallel to the target substrate or composed of the graphene and a carbon nanowall.8. A graphene structure forming method for forming a graphene structure claim 1 , comprising:preparing a target substrate; andforming a graphene structure including a carbon nanowall on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas.9. The ...

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Номер записи: 93
31-03-2016 дата публикации

Substrate processing method

Номер: US20160093474A1
Автор: Kiyotaka Ishibashi, Osamu Morita
Принадлежит: Tokyo Electron Ltd

A substrate processing method for performing a plasma process on a processing target substrate by a plasma processing apparatus is provided. The plasma processing apparatus comprises: a processing chamber; a gas supply unit; a mounting table; a microwave generator; a dielectric plate; a slot antenna plate; a wavelength shortening plate; and a microwave supply unit, and the microwave supply unit comprises a coaxial waveguide and a distance varying device. The substrate processing method comprises: mounting the processing target substrate on the mounting table; generating microwave by the microwave generator; and varying, by the distance varying device, a distance in a radial direction between a part of an outer surface of an inner conductor and a facing member facing a part of an outer surface of the inner conductor in order to uniformly generate plasma under a lower surface of the dielectric plate in the processing chamber.

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Номер записи: 94
31-03-2016 дата публикации

METHOD AND APPARATUS FOR GENERATING PLASMA PULSES

Номер: US20160093475A1
Автор: Gesche Roland
Принадлежит: FORSCHUNGSVERBUND BERLIN E.V.

A method and apparatus generates pulses that can be used for high-precision three-dimensional plasma treatment. At least two sources are furnished with at least one time function, wherein each of the at least two sources radiates an electromagnetic field generated by one of the time functions, and the at least one time function. In a method, the at least two sources cooperate in such a manner that at least one predetermined field strength is realized sequentially in a temporal succession in at least two predetermined space-time points. An alternative method uses at least one source and at least one reflection element. An apparatus with at least two sources and at least one data processing device or at least one source, at least one reflection element and at least one data processing device is configured such that one of the methods can be executed. 1. A method for generating plasma pulses , whereinat least two sources of which each is furnished with at least one corresponding time function, whereineach of the at least two sources radiates an electromagnetic field generated by the at least one corresponding time function, andthe at least one corresponding time functions and the at least two sources cooperate in such a manner that a constructive temporal and spatial superposition of the radiated electromagnetic fields of at least one predetermined field strength is realized sequentially in a temporal succession in at least two predetermined space-time points, wherein the at least two predetermined space-time points correspond to different locations in three dimensional space.2. The method according to claim 1 , wherein the at least one predetermined space-time point is reached by at least one of the time functions on at least two different propagation paths.3. The method according to claim 1 , wherein the predetermined space-time points form a one- claim 1 , two- or three-dimensional structure.4. The method according to claim 1 , wherein at least one time function is ...

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Номер записи: 95
05-05-2022 дата публикации

Method for improving service life of magnetron

Номер: US20220136098A1
Автор: Huang Kama, LIU Changjun, Yang Yang, Zhu Huacheng
Принадлежит:

A method for improving service life of a magnetron, which belongs to the technical field of microwave applications, includes: taking anode working voltage range is taken as n voltage values U1 . . . Un constituting an arithmetic sequence; taking the voltage value as the anode voltage; in each voltage value, adjusting the magnet coil current between I min and Imax by the coil current control part , so that the output power P of the experimental magnetron is equal to the target power P0, and measuring the cathode filament temperature at this time by the temperature measuring part, which is denoted as Ti; measuring all the cathode filament temperatures Ti as the temperature data set corresponding to P0 by the temperature measuring part; taking out the minimum temperature value Tmin in the temperature data set, and using the anode voltage value and the magnet coil current value corresponding to Tmin as the working magnetron, wherein the output power is the anode voltage value and the magnet coil current value of P0. The present invention provides a method for improving the service life of a magnetron, which adjusts the electric field and the magnetic field, finds the synergy between the magnetic field and the electric field, and improves the service life of the magnetron.

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Номер записи: 96
29-03-2018 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20180090301A1
Автор: Kubota Shinji
Принадлежит:

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group. 1. A plasma processing apparatus , comprising:a processing vessel;a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; anda plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.2. The plasma processing apparatus of claim 1 ,wherein the frequencies of the multiple carrier waves are arranged at a regular interval.3. The plasma processing apparatus of claim 1 ,wherein the carrier wave group is generated by modulating carrier waves having a phase difference of 90° with I data and Q data obtained by quantizing waveform data and performing inverse Fourier transform thereon.4. The plasma processing apparatus of claim 1 ,wherein the frequencies of the multiple carrier waves are maintained constant regardless of a lapse of time.5. The plasma processing apparatus of claim 1 ,wherein the multiple carrier waves have a same amplitude.6. The plasma processing apparatus of claim 1 ,wherein the amplitude of each of the multiple carrier waves is maintained constant regardless of a lapse of time.7. The plasma processing apparatus of claim 1 ,wherein, among the multiple carrier waves, at least two carrier waves having neighboring frequencies in the preset frequency band have different phases.8. The plasma processing apparatus of claim 1 ,wherein, among the multiple carrier waves, at least two carrier waves having neighboring frequencies in the ...

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Номер записи: 97
21-03-2019 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20190088453A1
Автор: SONODA Yasushi, TANAKA Motohiro, YAMAMOTO Koichi, YASUI Naoki
Принадлежит:

A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil. A response time constant of the first power source is smaller than a response time constant of the second power source. 1. A plasma processing apparatus comprising:a processing chamber in which a sample is subjected to plasma processing;a radio frequency power source that supplies radio frequency power for a microwave; anda magnetic-field generation unit that forms a magnetic field for generating plasma by an interaction with the microwave, a first power source that causes a current to flow in a first magnetic-field forming coil configured to form a magnetic field in the processing chamber, and', 'a second power source that causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber,, 'wherein the magnetic-field generation unit includes'}sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil, anda response time constant of ...

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Номер записи: 98
05-05-2022 дата публикации

MONOPOLE ANTENNA ARRAY SOURCE FOR SEMICONDUCTOR PROCESS EQUIPMENT

Номер: US20220139668A1
Автор: Liang Qiwei, Nemani Srinivas D.
Принадлежит:

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

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Номер записи: 99
26-06-2014 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20140174660A1
Автор: Iwasaki Masahide
Принадлежит: TOKYO ELECTRON LIMITED

The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage. 1. A plasma processing apparatus , comprising:a processing chamber that can be evacuated to a vacuum state;a processing gas supplying unit configured to supply a processing gas to the processing chamber;a microwave supplying unit configured to supply microwave to the processing chamber in order to produce plasma of the processing gas;an electrode configured to hold a substrate to be processed so as to be exposed to the plasma in the processing chamber;a high frequency power supplying unit configured to apply high frequency wave for RF bias via a power feeding rod having a cylindrical shape;an external conductor that encloses a periphery of the power feeding rod; anda choke mechanism configured to block a space propagation of the microwave between the power feeding rod and the external conductor.2. The plasma processing apparatus of claim 1 , wherein the choke mechanism comprises:a first waveguide having a line length of ¼ wavelength that extends in parallel with an axis direction of the power feeding rod with a gap narrower than a distance between the outer peripheral surface of the power feeding rod and the inner peripheral surface of the external conductor to form a cylindrical shape; anda second waveguide having a line length of ¼ wavelength that is connected to a terminal end ...

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Номер записи: 100