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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 2734. Отображено 100.
05-01-2012 дата публикации

Vapor-phase process apparatus, vapor-phase process method, and substrate

Номер: US20120003142A1
Автор: Eiryo Takasuka, Masaki Ueno, Toshio Ueda, Toshiyuki Kuramoto
Принадлежит: Sumitomo Electric Industries Ltd

A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

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Номер записи: 1
29-03-2012 дата публикации

Electrode plate for plasma etching and plasma etching apparatus

Номер: US20120073753A1
Автор: Keiichi Nagakubo, Naoyuki Satoh, Nobuyuki Nagayama
Принадлежит: Tokyo Electron Ltd

An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

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Номер записи: 2
29-03-2012 дата публикации

Electrode and plasma processing apparatus

Номер: US20120073755A1
Автор: Daisuke Hayashi
Принадлежит: Tokyo Electron Ltd

Electric field intensity distribution of a high frequency power for plasma generation can be controlled without generating abnormal electric discharge. There is provided an electrode for a plasma processing apparatus capable of supplying a gas. The electrode may include a base member 105 a made of a dielectric material and having therein a certain space U; a cover 107 for airtightly sealing the space U and isolating the space U from a plasma generation space when the electrode is installed at the plasma processing apparatus; and multiple gas hole tubes 105 e passing through the cover member 107 , the space U and the base member 105 a . Each gas hole tube has a gas hole isolated from the space U.

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Номер записи: 3
28-06-2012 дата публикации

Variable-Density Plasma Processing of Semiconductor Substrates

Номер: US20120164834A1
Автор: Douglas Keil, Edward Augustyniak, Kevin Jennings, Mohamed Sabri, Sunil Kapoor
Принадлежит: Novellus Systems Inc

Methods and hardware for generating variable-density plasmas are described. For example, in one embodiment, a process station comprises a showerhead including a showerhead electrode and a substrate holder including a mesa configured to support a substrate, wherein the substrate holder is disposed beneath the showerhead. The substrate holder includes an inner electrode disposed in an inner region of the substrate holder and an outer electrode being disposed in an outer region of the substrate holder. The process station further comprises a plasma generator configured to generate a plasma in a plasma region disposed between the showerhead and the substrate holder, and a controller configured to control the plasma generator, the inner electrode, the outer electrode, and the showerhead electrode to effect a greater plasma density in an outer portion of the plasma region than in an inner portion of the plasma region.

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Номер записи: 4
19-07-2012 дата публикации

Semiconductor processing system and methods using capacitively coupled plasma

Номер: US20120180954A1
Автор: Dmitry Lubomirsky, Jang-Gyoo Yang, Kien N. Chuc, Matthew L. Miller, Qiwei Liang, Shankar Venkataraman, Xinglong Chen
Принадлежит: Applied Materials Inc

Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

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Номер записи: 5
26-07-2012 дата публикации

Electrostatic remote plasma source

Номер: US20120187844A1
Автор: Daniel Carter, Daniel J. Hoffman, Karen Peterson, Randy Grilley, Victor Brouk
Принадлежит: Advanced Energy Industries Inc

This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.

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Номер записи: 6
13-09-2012 дата публикации

Method and Apparatus for Treating Containers

Номер: US20120231182A1
Автор: Gabriel Ormonde, James Mitchener, Ronald Stevens
Принадлежит: KAIATECH Inc

An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

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Номер записи: 7
07-02-2013 дата публикации

Gasket with positioning feature for clamped monolithic showerhead electrode

Номер: US20130034967A1
Автор: Gautam Bhattacharyya, Gregory R. Bettencourt, Sandy Chao, Simon Gosselin Eng.
Принадлежит: Individual

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

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Номер записи: 8
09-01-2014 дата публикации

Plasma System, Chuck and Method of Making a Semiconductor Device

Номер: US20140011356A1
Автор: Manfred Engelhardt
Принадлежит: INFINEON TECHNOLOGIES AG

A chuck, a system including a chuck and a method for making a semiconductor device are disclosed. In one embodiment the chuck includes a first conductive region configured to be capacitively coupled to a first RF power generator, a second conductive region configured to be capacitively coupled to a second RF power generator and an insulation region that electrically insulates the first conductive region from the second conductive region.

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Номер записи: 9
03-01-2019 дата публикации

SPUTTER DEVICES AND METHODS

Номер: US20190003039A1
Автор: Geisler Michael, Kress Markus, Portka Martin, Schwarz Florian Peter
Принадлежит:

Sputter devices comprise a vacuum supply, a gas supply, a substrate holding device, and sputter sources. Each sputter source is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point. The sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface. The source reference surface is parallel to the substrate reference surface. At least one of the sputter sources has a source distance deviating from zero. 1. A sputter device for sputtering deposition of a layer on a three-dimensionally shaped substrate surface of a substrate in a deposition area , the sputter device comprising in a deposition section of the sputter device:at least one vacuum supply for generation of a vacuum in the deposition section;a gas supply for introduction of process gas for the sputtering deposition in the deposition section;a substrate holding device for support of the substrate relative to a substrate reference surface of the substrate holding device; andsputter sources, each of which is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point, wherein the sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface, wherein the source reference surface is parallel to the substrate reference surface, wherein at least one of the sputter sources has a source distance deviating from zero, and wherein the source distance is measured between the source reference surface and the individual reference point of ...

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Номер записи: 10
07-01-2016 дата публикации

PLASMA SOURCE

Номер: US20160005575A1
Автор: Daniel Alain, Duminica Florin Daniel, LeClercq Vincent, Silberberg Eric
Принадлежит: ARCELORMITTAL INVESTIGACIÓN Y DESARROLLO SL

The invention relates to a plasma source () for depositing a coating onto a substrate (), which is connectable to a power source (P) and includes: an electrode (); a magnetic assembly () located circumferentially relative to said electrode and including a set of magnets mutually connected by a magnetic bracket () including a first and second central magnet () and at least one head magnet (); and an electrically insulating enclosure () arranged such as to surround the electrode and the magnets. 119. A plasma source () intended for the depositing of a coating on a substrate () and able to be connected to a power source (P) , comprising:{'b': 2', '3', '6', '21', '22', '23', '24', '26', '27', '28, 'a) an electrode () delimiting a discharge cavity () leading onto an aperture () opposite which the said substrate can be positioned, the cross-section of the said electrode comprising a first and a second side wall (, ) positioned either side of a bottom part (, ) provided with a central portion protruding into the said discharge cavity, the said central portion comprising a first and a second central wall (, ) and a top part () joining together the two central walls;'}{'b': 4', '46, 'claim-text': [{'b': 41', '42', '21', '22', '6, 'i) at least a first and a second side magnet (, ), the said first side magnet, respectively second side magnet, being arranged behind the said first side wall () and second side wall () respectively, in the vicinity of the said aperture (), the said side magnets being oriented such that their exposed poles have the same polarity;'}, {'b': 43', '44', '26', '27, 'ii) at least a first and a second central magnet (, ), the said first central magnet, and second central magnet respectively, being arranged behind the said first central wall () and second central wall () respectively, the said two central magnets being oriented such that their exposed pole is of opposite polarity to that of the exposed poles of the side magnets;'}, {'b': 45', '28, 'iii) at ...

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Номер записи: 11
03-01-2019 дата публикации

PLASMA REACTOR HAVING A FUNCTION OF TUNING LOW FREQUENCY RF POWER DISTRIBUTION

Номер: US20190006155A1
Автор: LIU Shenjian, Ni Tuqiang, Zhao Kui
Принадлежит:

The present disclosure provides a plasma reactor having a function of tuning low frequency RF power distribution, comprising: a reaction chamber in which an electrically conductive base is provided, the electrically conductive base being connected to a low frequency RF source via a first match, an electrostatic chuck being provided on the electrically conductive base, an upper surface of the electrostatic chuck being configured for fixing a to-be-processed substrate, an outer sidewall of the electrically conductive base being coated with at least one layer of plasma corrosion-resistance dielectric layer, a coupling ring made of a dielectric material surrounding an outer perimeter of the base, a focus ring being disposed above the coupling ring, the focus ring being arranged surround the electrostatic chuck and be exposed to a plasma during a plasma processing procedure; the plasma reactor further comprising an annular electrode that is disposed above the coupling ring but below the focus ring; a wire, a first end of which is electrically connected to the base, and a second end of which is connected to the annular electrode, a variable capacitance being serially connected to the wire. 1. A plasma reactor having a function of tuning low frequency RF power distribution , comprising:a reaction chamber in which an electrically conductive base is provided, the electrically conductive base being connected to a low frequency RF source via a first match, an electrostatic chuck being provided on the electrically conductive base, an upper surface of the electrostatic chuck being configured for fixing a to-be-processed substrate, a coupling ring being arranged to surround an outer perimeter of the base, a focus ring being disposed above the coupling ring, the focus ring being arranged to surround the electrostatic chuck and to be exposed to a plasma during a plasma processing procedure;an annular electrode that is disposed above the coupling ring; and{'i': 'intermedia', 'an ...

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Номер записи: 12
11-01-2018 дата публикации

Plasma Processing Apparatus and Plasma Processing Method

Номер: US20180012768A1
Автор: Akio Ul, Itsuko Sakai, Yosuke Sato
Принадлежит: Toshiba Corp

A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing pat introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.

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Номер записи: 13
19-01-2017 дата публикации

PLASMA INDUCED FLOW ELECTRODE STRUCTURE, PLASMA INDUCED FLOW GENERATION DEVICE, AND METHOD OF MANUFACTURING PLASMA INDUCED FLOW ELECTRODE STRUCTURE

Номер: US20170018409A1
Автор: AKITA Masato, SANADA Yasushi, UI AKIO
Принадлежит:

In one embodiment, a plasma induced flow electrode structure has an electrode block, an insulating layer and an electrode layer. The electrode block has first and second surfaces and through holes penetrating between these first and second surfaces. The insulating layer is disposed on the first surface and inside the through holes. The electrode layer is disposed on the insulating layer of the first surface. 1. A plasma induced flow electrode structure comprising:an electrode block including a first and a second surface and a plurality of through holes penetrating between the first and second surfaces;an insulating layer disposed on the first surface and inside the through holes; andan electrode layer disposed on the insulating layer on the first surface.2. The plasma induced flow electrode structure of claim 1 ,wherein the electrode layer extends onto the insulating layer inside the through holes.3. The plasma induced flow electrode structure of claim 1 ,wherein the electrode layer is not disposed in a part of first areas on the first surface and around the through holes.4. The plasma induced flow electrode structure of claim 3 , further comprisinga second electrode layer disposed in a part of second areas on the second surface and around the through holes.5. The plasma induced flow electrode structure of claim 1 , further comprisingan insulating plate disposed between the insulating layer and the electrode layer, the insulating plate including third and fourth surfaces and a plurality of second through holes, the second through holes penetrating between the third and fourth surfaces and corresponding to the through holes.6. The plasma induced flow electrode structure of claim 5 ,wherein the electrode layer extends to inside the second through holes.7. The plasma induced flow electrode structure of claim 5 ,wherein the insulating plate includes projecting portions disposed around the second through holes and engaged with the through holes.8. The plasma induced flow ...

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Номер записи: 14
19-01-2017 дата публикации

APPARATUS AND METHODS FOR GENERATING REACTIVE GAS WITH GLOW DISCHARGES

Номер: US20170018410A1
Автор: ANDREASSON Johan O., Girschig Florian, LACOSTE Deanna, LAUX Christophe O., MANNAI Sebastien, PAI David, PANNIER Erwan, Raymond Luke C., RUSTERHOLTZ-DUVAL Diane, SAINCT Florent, TIBÈRE-INGLESSE Augustin, TONIATO Pierpaolo
Принадлежит:

An apparatus for generating a flow of reactive gas for decontaminating a material, surface or area, comprises a first electrode member comprising a first plurality of conductive surfaces and a second electrode member comprising a second plurality of conductive surfaces. The second electrode member is arranged in spaced relationship with the first electrode member to define a reactor channel. The conductive surfaces are exposed to the reactor channel so as to form air gaps between the first plurality of conductive surfaces and the second plurality of conductive surfaces. An air blower generates a flow of air through the reactor channel. An electric pulse generator repetitively generates voltage pulses between the first and second electrode members so as to produce glow discharges in the air gaps between the conductive surfaces of the first plurality and the conductive surfaces of the second plurality, the voltage pulses being generated at time intervals less than 1 millisecond and voltage pulse duration less than about 500 ns, the glow discharges being adapted to transform part of the flow of air into reactive gas. An output section delivers the reactive gas from the reactor channel to a sample or region to be decontaminated or treated. 1. An apparatus for generating a flow of reactive gas , comprising:a reactor channel for receiving an incoming flow of air,first and second electrode members made of an electrically conductive material, each of the first and second electrode members having at least one active surface exposed to the reactor channel, wherein the at least one active surface of the first electrode member and the at least one active surface of the second electrode member are arranged in spaced relationship to define an air gap there-between in the reactor channel,wherein the at least one active surface of the first electrode member is turned towards the second electrode member, so that an air gap is formed between each of the at least one active surface of ...

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Номер записи: 15
19-01-2017 дата публикации

EXTREME EDGE SHEATH AND WAFER PROFILE TUNING THROUGH EDGE-LOCALIZED ION TRAJECTORY CONTROL AND PLASMA OPERATION

Номер: US20170018411A1
Автор: Kamp Tom A., PATERSON Alexander, Sriraman Saravanapriyan
Принадлежит:

An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode. 1. An edge ring assembly for a plasma processing chamber , comprising:an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface;an annular electrode disposed below the edge ring and above the annular shelf;a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned over the annular shelf; anda plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.2. The edge ring assembly of claim 1 , wherein each of the plurality of insulated connectors is defined by a coaxial connector.3. The edge ring assembly of claim 1 , wherein the plurality of insulated connectors are ...

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Номер записи: 16
03-02-2022 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20220037127A1
Автор: Horikawa Kyohei, Nakatani Shintarou, Sato Kohei
Принадлежит:

To provide a plasma processing apparatus or a plasma processing method capable of improving a reliability or a yield. The plasma processing apparatus includes: a sample stage that is disposed inside a processing chamber disposed inside a vacuum container and on which a wafer is placed; a ring-shaped electrode made of a conductor, which is disposed on an outer peripheral side of the upper surface of the sample stage so as to surround the sample stage and to which radio frequency power is supplied; a dielectric cover that is placed above the ring-shaped electrode and covers the ring-shaped electrode; a rod-shaped member that is suspended and disposed in a through hole disposed on an outer peripheral side portion of the base material having a disc or cylindrical shape and forming the sample stage, and has a connector portion on an upper end portion of the rod-shaped member connected to the ring-shaped electrode and positioned at the ring-shaped electrode; a beam-shaped member that is disposed below the sample stage below the through hole with a gap therebetween and extends in a horizontal direction, whose one end is connected to a lower end portion of the rod-shaped member and the other end is positioned with respect to the sample stage, and whose the other end urges the rod-shaped member upward with respect to the ring-shaped electrode; and a radio frequency power source that is connected to the rod-shaped member via a power supply path and supplies the radio frequency power to the ring-shaped electrode. 1. A plasma processing apparatus , comprising:a processing chamber that is disposed inside a vacuum container;a sample stage that is disposed inside the processing chamber and on an upper surface of which a wafer to be processed is placed;a ring-shaped electrode made of a conductor, which is disposed on an outer peripheral side of the upper surface of the sample stage so as to surround the sample stage and to which radio frequency power is supplied;a dielectric cover ...

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Номер записи: 17
18-01-2018 дата публикации

Non-Thermal Soft Plasma Cleaning

Номер: US20180019106A1
Автор: CHAN Chia Sern
Принадлежит:

The present invention provides a Soft Plasma Cleaning (SPC) system () including a Guided Soft-Plasma Cleaning (G-SPC) (). The SPC system is a non-thermal, low temperature process and operable at atmosphere pressure, in both air and liquid medium. In an embodiment, a feedstock gas () is supplied to provide a discharging fluid () in the cleaning chamber (). A plasma guiding and amplifying component () guides and expands the discharging fluid to cover a large ablation area over the workpiece (), thereby also suppressing ion and electron bombardment damage or etching. The plasma guiding and amplifying component () may be formed with dielectric plates or tubes () with each dielectric having an aperture (a). The electric field and ion energy in the cleaning chamber can be additionally controlled via a floating electrode (), so as to suppress plasma damage during SPC. 1. A non-thermal soft plasma cleaning system comprising:a cleaning chamber containing fluid at atmospheric pressure;an electrode disposed in the cleaning chamber, wherein the electrode is connected to a power generator through a power matching unit; anda dielectric member disposed adjacent to the electrode to guide or direct a plasma generated between the electrode and a workpiece to reach the workpiece in a sweeping direction;wherein the workpiece is cleaned by the plasma without causing any plasma damage.2. The non-thermal soft plasma cleaning system according to claim 1 , wherein the dielectric member has an aperture claim 1 , so that the plasma goes through the aperture to reach the workpiece in said sweeping direction.3. The non-thermal soft plasma cleaning system according to claim 1 , wherein the fluid in the cleaning chamber is air or a gas; further comprising a feedstock gas to combine with the plasma into a discharging fluid flow claim 1 , to guide the plasma to the workpiece claim 1 , and to expand a cleaning area claim 1 , so as to with the feedstock gas adding plasma species into the plasma.4. ...

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Номер записи: 18
17-01-2019 дата публикации

PLASMA TREATMENT DEVICE AND STRUCTURE OF REACTION VESSEL FOR PLASMA TREATMENT

Номер: US20190019656A1
Автор: MINOWA Hiroyuki, SHEK Lung Kei Amos, Yoshimura Toshiaki
Принадлежит:

The present invention improves the in-plane uniformity of films formed via a plasma treatment. It is provided a plasma treatment device comprising: an electrode plate arranged in a reaction vessel; a counter electrode arranged parallel so as to opposite to the electrode plate in the reaction vessel; a transmission plate to supply frequency power to the electrode plate from outside of the reaction vessel, the transmission plate being connected from non-opposite side not opposing to the counter electrode of the electrode plate; and an insulator with a container shape, the insulator being arranged in the reaction vessel and storing the electrode plate therein; wherein the non-opposite side of the electrode plate closely contacts to an inner bottom surface of the insulator with the container shape, wherein a side surface of the electrode plate closely contacts to an inner side surface of the insulator with the container shape, and wherein a hole edge portion of the insulator with the container shape is formed so as to protrude toward a counter electrode side. 1. A plasma treatment device comprising:an electrode plate arranged in a reaction vessel;a counter electrode arranged parallel so as to opposite to the electrode plate in the reaction vessel;a transmission plate to supply frequency power to the electrode plate from outside of the reaction vessel, the transmission plate being connected from non-opposite side not opposing to the counter electrode of the electrode plate; andan insulator with a container shape, the insulator being arranged in the reaction vessel and storing the electrode plate therein;wherein the non-opposite side of the electrode plate closely contacts to an inner bottom surface of the insulator with the container shape,wherein a side surface of the electrode plate closely contacts to an inner side surface of the insulator with the container shape, andwherein a hole edge portion of the insulator with the container shape is formed so as to protrude ...

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Номер записи: 19
22-01-2015 дата публикации

METHOD OF MAKING A GAS DISTRIBUTION MEMBER FOR A PLASMA PROCESSING CHAMBER

Номер: US20150024582A1
Автор: Taylor Travis Robert
Принадлежит:

A method of making a Si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the Si containing gas distribution member. The method includes depositing Si containing material on the formed carbon member such that the Si containing material forms a shell around the formed carbon member. The Si containing shell is machined into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member. The method includes removing the formed carbon member from the interior region of the Si containing gas distribution member with a gas that reacts with carbon, dissociating the carbon atoms, which may thereby be removed from the interior region of the Si containing gas distribution member leaving a shaped internal cavity in the interior region of the Si containing gas distribution member. 1. A showerhead electrode assembly for a semiconductor plasma processing chamber comprising a Si containing gas distribution member made by forming a carbon member into a form corresponding to an internal cavity structure of the Si containing gas distribution member; depositing a Si containing material on the formed carbon member such that the Si containing material forms a shell of a predetermined thickness around the formed carbon member; machining the Si containing shell into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member; and removing the formed carbon member from the interior region of the Si containing gas distribution member with a gas that reacts with carbon , dissociating the carbon atoms , which may thereby be removed from the interior region of the Si ...

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Номер записи: 20
25-01-2018 дата публикации

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Номер: US20180025890A1
Автор: ANWAR Suhail, CHOI Soo Young, HOU LI, Kim Ki Woon, KURITA Shinichi, PARK Beom Soo, TINER Robin L., WANG Qunhua, WHITE John M., WON Tae Kyung
Принадлежит:

Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support. 1. A method of depositing a thin film on a substrate , comprising:placing a substrate on a substrate support that is mounted in a processing region of a processing chamber;flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side; andcreating a plasma between the downstream side of the diffuser plate and the substrate support.2. The method of claim 1 , wherein each of the gas passages comprise a hollow cathode cavity in fluid communication with the downstream side.3. The method of claim 2 , wherein a volume claim 2 , a surface area claim 2 , or a density of each of the gas passages varies across the diffuser plate to obtain a desired thin film thickness and property uniformity.4. The method of claim 1 , wherein the diffuser plate is rectangular.5. The method of claim 1 , wherein the diffuser plate size is at least 1 claim 1 ,200 claim 1 ,000 mm.6. The method of claim 1 , wherein each of the gas passages comprise:an orifice hole having a first diameter; anda hollow cathode cavity that is downstream of and in fluid ...

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Номер записи: 21
25-01-2018 дата публикации

HOLLOW CATHODE PLASMA SOURCE

Номер: US20180025892A1
Автор: BIQUET Thomas, CHAMBERS John, MASCHWITZ Peter, WIAME Hughes
Принадлежит:

The present invention relates to a hollow cathode plasma source and to methods for surface treating or coating using such a plasma source, comprising first and second electrodes (), each electrode comprising an elongated cavity (), wherein dimensions for at least one of the following parameters is selected so as to ensure high electron density and/or low amount of sputtering of plasma source cavity surfaces, those parameters being cavity cross section shape, cavity cross section area cavity distance (), and outlet nozzle width (). 1. A hollow cathode plasma source comprising a first electrode and a second electrode each electrode comprising an elongated cavity ,wherein the cathodes extend substantially parallel to each otherwherein the first and second electrodes are both provided with a gas inlet for the plasma forming gas and with a gas outlet which leads to an outlet nozzle which is directed towards a substrate "wherein at least one of the following parameter's dimension is selected", 'wherein first and second electrodes are electrically connected to a power source supplying the electrodes with alternatingly opposing voltages'}i. the cavity cross section is of rectangular, rounded rectangular or circular shape or of a shape intermediary of these shapes,{'sup': 2', '2, 'claim-text': iii. the cavity distance is comprised between 85 mm and 160 mm,', 'iv. the outlet nozzle width is comprised between 1 mm and 25 mm., 'ii. the cavity cross section area is comprised between 500 mmand 4000 mm,'}2. The hollow cathode plasma source according to claim 1 , wherein at least two of the parameter's dimensions i. to iv. are selected.3. The hollow cathode plasma source according to claim 1 , wherein all of the parameter's dimensions i. to iv. are selected.4. The hollow cathode plasma source according to claim 1 , wherein the cavity cross section shape is circular.5. The hollow cathode plasma source according to claim 1 , wherein the cavity cross section area is comprised between ...

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Номер записи: 22
10-02-2022 дата публикации

RF TUNING SYSTEMS INCLUDING TUNING CIRCUITS HAVING IMPEDANCES FOR SETTING AND ADJUSTING PARAMETERS OF ELECTRODES IN ELECTROSTATIC CHUCKS

Номер: US20220044909A1
Автор: Burkhart Vincent E., French David, Leeser Karl Frederick, Meng Liang
Принадлежит:

A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal. 1. A substrate processing system , the substrate processing system comprising:a substrate support configured to support the substrate, wherein the substrate support comprises a first one or more electrodes; and a series impedance set comprising a first impedance and a second impedance connected in series with the first impedance, and', 'a parallel impedance set connected to the series impedance set and comprising a third impedance and a fourth impedance connected in parallel with the third impedance., 'a first tuning circuit connected to the first one or more electrodes and a ground reference terminal and comprising2. The substrate processing system of claim 1 , wherein the series impedance set is connected between the first one or more electrodes and the parallel impedance set.3. The substrate processing system of claim 1 , wherein the first tuning circuit is connected in series with the first one or more electrodes and the ground reference terminal.4. The substrate processing system of claim 1 , wherein the parallel impedance set is connected in series ...

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Номер записи: 23
10-02-2022 дата публикации

IMPROVEMENTS IN PLASMA REACTORS

Номер: US20220044915A1
Автор: BRAUER John Lionel
Принадлежит: OZONE 1 PTY LTD

An electrode for a plasma reactor, the electrode comprising an elongate body having an inlet end and an opposed outlet end, a reaction region extending along a portion of the elongate body, a first sealing region located between the reaction region and the inlet end of the elongate body and a second sealing region located between the reaction region and the outlet end of the elongate body, wherein the first sealing region and the second sealing region each comprise a plurality of receiving portions adapted to receive a sealing member therein, and wherein a barrier member adapted to reduce or eliminate the flow of fluid between the receiving portions provided between each of the plurality of receiving portions. 1. An electrode for a plasma reactor , the electrode comprising an elongate body having an inlet end and an opposed outlet end , a reaction region extending along a portion of the elongate body , a first sealing region located between the reaction region and the inlet end of the elongate body and a second sealing region located between the reaction region and the outlet end of the elongate body , wherein the first sealing region and the second sealing region each comprise a plurality of receiving portions adapted to receive a sealing member therein , and wherein a barrier member adapted to reduce or eliminate a flow of fluid between the receiving portions is provided between each of the plurality of receiving portions.2. An electrode according to wherein the reaction region comprises a portion of an outer surface of the elongate body.3. An electrode according to wherein the outer surface of the elongate body in the reaction region is adapted to enhance the reaction that is to take place in the reaction region.4. An electrode according to wherein opposed ends of the reaction region are defined by a shoulder member adapted to reduce or eliminate the flow of fluid past the shoulder member.5. An electrode according to wherein the shoulder members extend outwardly ...

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Номер записи: 24
24-01-2019 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20190027344A1
Автор: NAGASHIMA Nozomu, Okunishi Naohiko, TAKAHASHI Tomoyuki
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe. 1. A plasma processing apparatus comprising:a chamber body that provides a chamber;a stage configured to support a target object in the chamber, the stage including a lower electrode, an electrostatic chuck provided on the lower electrode, a plurality of heaters, and a plurality of terminals electrically connected to the plurality of heaters;a high frequency power supply provided outside the chamber body and configured to generate a high frequency power to be supplied to the lower electrode;a conductor pipe configured to electrically connect the high frequency power supply and the lower electrode;a plurality of power supply lines configured to supply power from a heater controller to the plurality of heaters; anda plurality of filters, which partially forms the plurality of power supply lines, provided outside the chamber body and configured to prevent the inflow of high frequency power from the plurality of heaters to the heater controller,wherein the plurality of power supply lines includes a plurality of wirings respectively connecting the plurality of terminals and the plurality of filters, andwherein the ...

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Номер записи: 25
17-02-2022 дата публикации

Upper electrode and substrate processing apparatus including the same

Номер: US20220051877A1
Автор: Byungjo KIM, Jungmin Ko, Kwonsang SEO, Sangki NAM, SeungBo SHIM, Younghyun JO
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.

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Номер записи: 26
17-02-2022 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20220051878A1
Автор: Inoue Tadashi, SASAMOTO Hiroshi, Sato Tatsunori, SEKIYA Kazunari, TANABE Masaharu, TSUCHIYA Nobuaki
Принадлежит: CANON ANELVA CORPORATION

A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor. 1. A plasma processing apparatus comprising:a balun including a first input terminal, a second input terminal, a first output terminal, and a second output terminal;a vacuum container;a first electrode electrically connected to the first output terminal;a second electrode electrically connected to the second output terminal;a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor;a high-frequency power supply; andan impedance matching circuit arranged between the high-frequency power supply and the balun.2. A plasma processing apparatus comprising:a balun including a first input terminal, a second input terminal, a first output terminal, and a second output terminal;a grounded vacuum container;a first electrode electrically connected to the first output terminal;a second electrode electrically connected to the second output terminal;a connection unit configured to electrically connect the second input terminal and ground, the connection unit including an inductor;a high-frequency power supply; andan impedance matching circuit arranged between the high-frequency power supply and the balun.3. A plasma processing apparatus comprising:a balun including a first input terminal, a second input terminal, a first output terminal, and a second output terminal;a vacuum container;a first electrode electrically connected to the first output terminal;a second electrode electrically connected to the second output terminal; anda connection unit configured to ...

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Номер записи: 27
17-02-2022 дата публикации

APPARATUS AND TECHNIQUES FOR ANGLED ETCHING USING MULTIELECTRODE EXTRACTION SOURCE

Номер: US20220051880A1
Автор: Evans Morgan, Kurunczi Peter F., Olson Joseph C.
Принадлежит: Applied Materials, Inc.

A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane. 1. A method of patterning a substrate , comprising:providing the substrate, wherein a main surface of the substrate defines a substrate plane, wherein the substrate comprises a grating layer and a base layer, subjacent the grating layer;generating a plasma in a plasma chamber, adjacent to the substrate; andapplying an extraction voltage to an extraction assembly, adjacent the plasma chamber, the extraction assembly comprising at least two electrodes, wherein a first electrode is disposed immediately adjacent a side of the plasma chamber, the side of the plasma chamber defining a first plane, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the at least two electrodes define an angled extraction tunnel, disposed at a non-zero angle of inclination with respect to a perpendicular to the substrate plane,wherein an angled ion beam is extracted from the extraction assembly, the angled ion beam defining a non-zero angle of incidence with respect to the substrate plane,wherein the angled ion beam etches the ...

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Номер записи: 28
30-01-2020 дата публикации

Spatially variable wafer bias power system

Номер: US20200035459A1
Автор: Ilia Slobodov, James Prager, John Carscadden, Kenneth Miller, Timothy Ziemba
Принадлежит: Eagle Harbor Technologies Inc

A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

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Номер записи: 29
30-01-2020 дата публикации

CLEANING SOLUTION PRODUCTION SYSTEMS AND METHODS, AND PLASMA REACTION TANKS

Номер: US20200035515A1
Автор: BANG Jeong Min, HAN KYU HEE, Jang Won Hyuk, KIM Min Hyoung, KIM Young Do, Nam Sang Ki, Yoo Beom Jin
Принадлежит:

A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate. 1. A cleaning solution production system for cleaning a semiconductor substrate , comprising:a pressure tank;a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid;a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank; anda nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.2. The system of claim 1 , further comprising:a sensor for sensing a concentration of the radical species in the cleaning solution; anda first valve which is responsive to the concentration sensed by the sensor to selectively apply the cleaning solution to the semiconductor substrate via the nozzle.3. The system of claim 2 , further comprising a second valve which is responsive to the concentration sensed by the sensor to selectively transfer the cleaning solution to the pressure tank for recirculation through the system.4. The system of claim 3 , further comprising a circulation pump operatively connected between the second valve and the pressure tank.5. The system of claim 1 , further comprising a bubble formation device interposed between the pressure tank and the plasma reaction tank.6. The system of claim 5 , wherein the bubble formation device is a plate including a plurality of orifices.7. The ...

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Номер записи: 30
04-02-2021 дата публикации

APPARATUS AND SYSTEM HAVING EXTRACTION ASSEMBLY FOR WIDE ANGLE ION BEAM

Номер: US20210035779A1
Автор: Biloiu Costel, Campbell Christopher, Rockwell Tyler, SINCLAIR Frank, Thomas Appu Naveen
Принадлежит: Applied Materials, Inc.

An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture. 1. An ion beam processing apparatus comprising:a plasma chamber;a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture;a beam blocker, disposed within the plasma chamber and facing the extraction aperture;a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; andan extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.2. The ion beam processing apparatus of claim 1 , wherein the plasma plate comprises an electrical insulator body claim 1 , and the beam blocker comprises an electrical insulator body.3. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a first dielectric coating claim 1 , surrounding an electrically conductive inner electrode claim 1 , and wherein the extraction plate comprises a second dielectric coating claim 1 , disposed on an electrically conductive inner plate portion.4. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a triangular shape in cross-section along a first direction claim 1 , the first direction being perpendicular to a plane of the plasma plate.5. The ion beam processing apparatus of claim 1 , wherein the extraction plate is movable with respect to the plasma plate claim 1 , along a first direction claim 1 , the first ...

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Номер записи: 31
11-02-2016 дата публикации

PLASMA GENERATION CHAMBER WITH SMOOTH PLASMA RESISTANT COATING

Номер: US20160042924A1
Автор: KIM Sung Je, LUBOMIRSKY DMITRY, Park Soonam
Принадлежит:

A faceplate or a selectivity modulation device (SMD) for a plasma generation chamber has a plasma resistant ceramic coating on a surface of the faceplate or SMD, wherein the plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%. 1. A plasma generation chamber comprising:a faceplate having a first plasma resistant ceramic coating on a surface of the faceplate, wherein the first plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%;a selectivity modulation device (SMD) having a second plasma resistant ceramic coating on a surface of the SMD, wherein the second plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%; anda dielectric separator separating the faceplate from the selectivity modulation device;wherein the plasma generation chamber is to generate plasma for a processing chamber by accelerating radicals from the faceplate toward the SMD and through a plurality of holes in the SMD.2. The plasma generation chamber of claim 1 , wherein the first plasma resistant ceramic coating and the second plasma resistant ceramic coating each have a surface roughness of less than 32 micro-inches and a variation in surface roughness of less than 4 micro-inches.3. The plasma generation chamber of claim 1 , wherein the first plasma resistant ceramic coating and the second plasma resistant ceramic coating each have a variation in thickness of less than 0.4 microns.4. The plasma generation chamber of claim 1 , wherein wafers etched using plasma provided by the plasma generation chamber have a surface non-uniformity of approximately 3-5%.5. The plasma generation chamber of claim 1 , wherein the first plasma resistant ceramic coating and the second ...

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Номер записи: 32
09-02-2017 дата публикации

RADIO FREQUENCY PLASMA METHOD FOR UNIFORM SURFACE PROCESSING OF RF CAVITIES AND OTHER THREE-DIMENSIONAL STRUCTURES

Номер: US20170040144A1
Автор: Phillips H. Lawrence, Popovic Svetozar, UPADHYAY JANARDAN, VALENTE-FELICIANO ANNE-MARIE, VUSKOVIC LEPOSAVA
Принадлежит: Old Dominion University

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness. 1. A method for efficient plasma etching the inner wall of a chamber cavity , wherein the inner wall comprises one selected from the group consisting of a metal , a semiconductor , a dielectric material , and combinations thereof , the method comprising:positioning an inner electrode within the chamber cavity;evacuating the chamber cavity;wherein the chamber cavity has an internal surface area of from 50 to 10000 cm2;adding 60 to 100 weight percent of a first inert gas selected from the group consisting of Argon (Ar), Krypton (Kr), Helium (He), Xenon (Xe), and Nitrogen (N2), and combinations thereof to the chamber cavity at a pressure of from 0.01 to 1 Torr;regulating the pressure in the chamber; a radiofrequency (RF) discharge at a frequency of from 1 to 150 MHz,', 'a microwave discharge at power density of 0.1 to 3 W/cm 3 and frequency of 1.3 to 3 GHz,', 'a pulsed d.c. high voltage (HV) discharge at average power density of 0.1 to 3 W/cm 3, and combinations thereof;, 'generating a plasma sheath along the inner wall of the chamber cavity by applying one selected from the group consisting ofadjusting a positive D.C. bias on the inner electrode to establish the effective plasma sheath voltage of from 10 to 500 V;adding 1 to 15 ...

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Номер записи: 33
09-02-2017 дата публикации

SELF CLEANING ION GENERATOR DEVICE

Номер: US20170040149A1
Автор: WADDELL Charles Houston
Принадлежит: Global Plasma Solutions, LLC

The present invention provides methods and systems for a self-cleaning ion generator that includes a self-cleaning ion generator device that includes a bottom portion, a top portion, and a sidewall, and at least one electrode extending from the top portion, and a cleaning apparatus for cleaning the at least one electrode. 1. A self-cleaning ion generator device , comprising:a housing having at least an arcuate portion;at least one electrode extending from the housing; anda cleaning apparatus for cleaning the at least one electrode.2. The self-cleaning ion generator device of claim 1 , wherein the housing has a top portion and a bottom portion.3. The self-cleaning ion generator device of claim 1 , wherein the cleaning apparatus is powered by a motor for rotation during periodic intervals.4. The self-cleaning ion generator device of claim 1 , wherein the housing has a top portion claim 1 , a bottom portion claim 1 , and a mounting portion engaging the bottom portion and the top portion.5. The self-cleaning ion generator device of claim 1 , further comprising a bottom portion selectively secured to a mounting portion claim 1 , and a top portion is selectively secured to the mounting portion.6. The self-cleaning ion generator device of claim 1 , wherein the at least one electrode is selectively secured to an ion generator disposed within the housing.7. The self-cleaning ion generator device of claim 1 , further comprising at least two electrodes spaced apart and extending from the housing.8. The self-cleaning ion generator device of claim 1 , further comprising a collar extending from the device for mounting the device.9. The self-cleaning ion generator device of claim 1 , further comprising at least one cleaning head disposed on the cleaning apparatus for cleaning the at least one electrode.10. The self-cleaning ion generator device of claim 1 , wherein the at least one electrode consists of a plurality of bristles extending therefrom.11. A self-cleaning ion generator ...

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Номер записи: 34
12-02-2015 дата публикации

BOTTOM ELECTRODE AND MANUFACTURING METHOD THEREOF

Номер: US20150044424A1
Автор: Chen Hao, Jiang Xiaowei, LIU Huafeng, XIAO Hongxi, Zhu Xiaohui
Принадлежит:

A bottom electrode and a method of manufacturing the same are disclosed. The present invention relates to the field of dry etching, and has solved problems of separately fabrication of the ceramic points and ceramic layer of the conventional bottom electrode, low adhesion strength between the ceramic points and ceramic layer, incidental dropping off the ceramic layer. The bottom electrode includes: a metal substrate and an insulating layer disposed on the metal substrate, wherein the metal substrate comprises: a base substrate and a plurality of protrusion parts disposed on the base substrate, the insulating layer is disposed on surface of the base substrate and the protrusion parts on surface of the base substrate. Insulating protrusion points are formed at the protrusion parts. 1. A bottom electrode comprising a metal substrate and an insulating layer disposed on the metal substrate , wherein the metal substrate comprises: a base and a plurality of protrusion parts disposed on the base , the insulating layer overlaying the base and the plurality of protrusion parts.2. The bottom electrode of claim 1 , wherein the insulating layer on an upper surface of the base has a thickness same as that of the insulating layer on upper surfaces of the protrusion parts.3. The bottom electrode of claim 1 , wherein a material for forming the insulating layer is ceramics claim 1 , alumina or mica.4. The bottom electrode of claim 1 , wherein the upper surfaces of the protrusion parts are planar or curved surfaces.5. The bottom electrode of claim 1 , wherein the protrusion parts are arranged in an array on the base.6. The bottom electrode of claim 1 , wherein the protrusion parts and the base are formed integrally.7. The bottom electrode of claim 1 , wherein the protrusion parts and the base are formed separately and then mounted together.8. A method of manufacturing a bottom electrode claim 1 , comprising:forming a metal substrate with a plurality of protrusion parts: andforming an ...

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Номер записи: 35
24-02-2022 дата публикации

ACTIVE GAS GENERATION APPARATUS

Номер: US20220059322A1
Автор: ARITA Ren, Watanabe Kensuke
Принадлежит: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION

In an active gas generation apparatus of the present invention, an auxiliary conductive film provided on a first electrode dielectric film is provided to overlap part of an active gas flow path in plan view, and the auxiliary conductive film is set to the ground potential. An active gas auxiliary member provided on a second electrode dielectric film is provided to fill part of the active gas flow path between a discharge space and a gas ejection hole in a dielectric space between the first and second electrode dielectric films in order to limit to an active gas flow gap. 1. An active gas generation apparatus that generates an active gas obtained by activating a raw material gas supplied to a discharge space , the active gas generation apparatus comprising:a first electrode component; anda second electrode component provided below said first electrode component, whereinsaid first electrode component has a first electrode dielectric film and a first metal electrode formed on an upper surface of said first electrode dielectric film, said second electrode component having a second electrode dielectric film and a second metal electrode formed on a lower surface of said second electrode dielectric film, an AC voltage being applied between said first and second metal electrodes, and a dielectric space in which said first and second electrode dielectric films face each other including, as said discharge space, an area where said first and second metal electrodes overlap each other in plan view,said second electrode dielectric film has a gas ejection hole for ejecting said active gas outside, and a path from said discharge space to said gas ejection hole is defined as an active gas flow path,said first electrode component further has an auxiliary conductive film formed, independently of said first metal electrode, on the upper surface of said first electrode dielectric film,said auxiliary conductive film is provided to overlap part of said active gas flow path in plan view, ...

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Номер записи: 36
19-02-2015 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20150048052A1
Автор: COULSON Stephen Richard, HOPPER Fred, King Charles Edmund
Принадлежит:

The present invention relates to an apparatus () for plasma processing an article (), the apparatus comprising: a chamber () for receiving an article to be processed; electrode means () for generating an electric field in said chamber for establishing a plasma in said chamber so that said article can be processed; generation means () for generating alternating electrical energy for transmission to said electrode means (); connection means for connecting said generation means to said electrode means (); and control means for varying the location of nodes and anti-nodes of standing waves generated in said chamber during processing, so that a plurality of standing waves are generated over time which are not coincident with one another. 1. An apparatus for plasma processing an article , the apparatus comprising:a chamber for receiving an article to be processed;an electrode means for generating an electric field in said chamber for establishing a plasma in said chamber so that said article can be processed;a generation means for generating alternating electrical energy for transmission to said electrode means;a connection means for connecting said generation means to said electrode means; anda control means for varying the location of nodes and anti-nodes of standing waves generated in said chamber during processing, so that a plurality of standing waves are generated over time which are not coincident with one another.2. The apparatus as claimed in claim 1 , wherein said control means controls the connection means so that alternating electrical energy is transmitted to more than one region of the electrode means in sequence claim 1 , one region to another region claim 1 , during processing of the article.3. The apparatus as claimed in claim 1 , wherein said control means varies the phase of the alternating electrical energy which is transmitted to the electrode means during processing of the article.4. The apparatus as claimed in claim 1 , wherein said electrode means ...

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Номер записи: 37
06-02-2020 дата публикации

RF TUNING SYSTEMS INCLUDING TUNING CIRCUITS HAVING IMPEDANCES FOR SETTING AND ADJUSTING PARAMETERS OF ELECTRODES IN ELECTROSTATIC CHUCKS

Номер: US20200043703A1
Автор: Burkhart Vincent E., French David, Leeser Karl Frederick, Meng Liang
Принадлежит:

A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal. 1. A substrate processing system for processing a substrate within a processing chamber , the substrate processing system comprising:a source terminal;a substrate support configured to hold the substrate, wherein the substrate support comprises a plurality of electrodes, wherein the plurality of electrodes includes a first electrode and a second electrode, and wherein the first electrode and the second electrode receive power from a first power source via the source terminal; anda first tuning circuit connected to at least one of the first electrode and the second electrode, a first impedance set serially connected between the first electrode and the first power source, wherein the first impedance set receives a first signal from the first power source via the source terminal, and wherein the one or more signals include the first signal, or', 'a second impedance set connected between an output of the first power source and a reference terminal, wherein the second impedance set receives the first signal from the first power source via the source terminal., ' ...

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Номер записи: 38
06-02-2020 дата публикации

ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS AND METHOD FOR REGENERATING ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS

Номер: US20200043707A1
Автор: Fujimori Syuji, Nomura Satoshi
Принадлежит:

According to the present invention, an electrode plate for a plasma processing apparatus is provided, which includes an air hole through which a gas for plasma generation passes, the electrode plate for a plasma processing apparatus including: a base; and a coating layer provided on at least one front surface of the base, and in which the base is formed of a material having a plasma resistance higher than the plasma resistance of a material forming the coating layer. 1. An electrode plate for a plasma processing apparatus , which includes an air hole through which a gas for plasma generation passes , the electrode plate comprising:a base; anda coating layer provided on at least one front surface of the base,wherein the base is formed of a material having a plasma resistance higher than the plasma resistance of a material forming the coating layer.2. The electrode plate for a plasma processing apparatus according to claim 1 ,{'sub': 2', '3', '2', '3', '2', '3', '2', '3, 'wherein the material forming the base is one or a mixture of two or more selected from the group consisting of YO, AlO, and AlN, or a mixture of SiC and one or more selected from the group consisting of YO, AlO, and AlN, and'}wherein the material forming the coating layer is dense silicon carbide.3. A method for regenerating an electrode plate for a plasma processing apparatus claim 1 , in which the electrode plate for a plasma processing apparatus includes an air hole through which a gas for plasma generation passes claim 1 , in which the electrode plate for a plasma processing apparatus includes a base and a coating layer provided on at least one front surface of the base claim 1 , and in which the coating layer is formed of dense silicon carbide and the base is formed of a material having a plasma resistance higher than the plasma resistance of the dense silicon carbide claim 1 , the method comprising:a step of recoating a dense silicon carbide layer on a front surface of the electrode plate for ...

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Номер записи: 39
18-02-2021 дата публикации

Microwave Plasma Source For Spatial Plasma Enhanced Atomic Layer Deposition (PE-ALD) Processing Tool

Номер: US20210050187A1
Автор: BERA KALLOL, Dzilno Dmitry A., FORSTER John C., Garachtchenko Alexander V., KUDELA Jozef, LI Xiaopu, Shervegar Avinash, SUBRAMANI ANANTHA K., Tanaka Tsutomu
Принадлежит: Applied Materials, Inc.

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed. 1. A plasma source assembly comprising:a powered electrode having a first end and a second end defining a length and having an elongate axis extending along the length of the powered electrode, the powered electrode having a thickness and width;a ground electrode on a first side of the powered electrode, the ground electrode spaced from the powered electrode by a distance;a dielectric on a second side of the powered electrode, the dielectric and ground electrode enclosing the powered electrode, the dielectric having an inner face adjacent the powered electrode and an outer face opposite the inner face;a first microwave generator electrically coupled to the first end of the powered electrode through a first feed; anda second microwave generator electrically coupled to the second end of the powered electrode through a second feed.2. The plasma source assembly of claim 1 , wherein the ground electrode is spaced from the powered electrode by a second dielectric.3. The plasma source assembly of claim 1 , wherein the powered electrode is a flat conductor.4. The plasma source assembly of claim 1 , wherein one or more of the width of the powered electrode changes from the first end to the second end claim 1 , the distance from powered electrode to the ground electrode changes from first end to second end; or a distance from powered electrode to the outer face of the dielectric changes from first end to the second end.5. The plasma source assembly of claim 4 , ...

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Номер записи: 40
15-02-2018 дата публикации

DRY-ETCH DEVICE AND A LOWER ELECTRODE THEREOF

Номер: US20180047546A1
Автор: Li Wei, QU Hongming, YU Kai, Zhang Guangming
Принадлежит:

A dry-etch device and a lower electrode are disclosed. The lower electrode includes a body of an electrode plate and a plurality of protrusions. The body of the electrode plate has an upper surface and a lower surface opposite each other. The plurality of protrusions is provided on the upper surface of the body of the electrode plate and a surface defined by the top of each protrusion is a curved surface protruding upwardly. 1. A lower electrode of a dry-etch device , comprising:a body of an electrode plate having an upper surface and a lower surface opposite each other, anda plurality of protrusions provided on the upper surface of the body of the electrode plate, wherein a surface defined by the top of each protrusion is a curved surface protruding upwardly.2. The lower electrode of the dry-etch device according to claim 1 , wherein the curved surface is in a shape of arch or spherical crown.3. The lower electrode of the dry-etch device according to claim 1 , wherein the upper surface of the body of the electrode plate is a curved surface protruding upwardly claim 1 , and the lower surface is a flat surface.4. The lower electrode of the dry-etch device according to claim 1 , wherein the upper surface of the body of the electrode plate is a flat surface claim 1 , and height of the plurality of protrusions thereon is decreased gradually from center to periphery so as to form the curved surface protruding upwardly.5. The lower electrode of the dry-etch device according to claim 1 , wherein both the upper surface and the lower surface of the body of the electrode plate are curved surfaces protruding upwardly.6. The lower electrode of the dry-etch device according to claim 5 , wherein every area of the body of the electrode plate has the same thickness.7. The lower electrode of the dry-etch device according to claim 1 , wherein height difference between the center of the curved surface defined by the top of each protrusion and the top of the lowest protrusion at the ...

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Номер записи: 41
26-02-2015 дата публикации

Plasma processing apparatus

Номер: US20150053553A1
Автор: Kazuhiko Irisawa, Masaki Chiba, Shigeaki Kishida, Yasunori Ando
Принадлежит: Japan Steel Works Ltd, Nissin Electric Co Ltd

The antenna has a structure that the high frequency electrode is received in a dielectric case. The high frequency electrode has a go-and-return conductor structure that two electrode conductors are disposed close to and in parallel to each other with a gap therebetween to form a rectangular plate shape as a whole, and the two electrode conductors are connected by a conductor at an end in the longitudinal direction. A high frequency current flows in the two electrode conductors in opposite directions. A plurality of openings are formed on edges of the two electrode conductors on the side of the gap, and the openings are dispersed and arranged in the longitudinal direction of the high frequency electrode. The antenna is disposed in a vacuum container in a direction that a main surface of the high frequency electrode and a surface of the substrate are substantially perpendicular to each other.

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Номер записи: 42
03-03-2022 дата публикации

Plasma Processing Systems and Methods for Chemical Processing a Substrate

Номер: US20220068601A1
Автор: OHATA Mitsunori, RANJAN ALOK, Ventzek Peter
Принадлежит:

A plasma processing system includes a radical source chamber including a gas inlet, an electrode coupled to a radio frequency (RF) power source, where the electrode is configured to generate radicals within the radical source chamber, and an exit for radicals generated within the radical source chamber; a plenum attached to the exit of the radical source chamber, where the plenum is made of a first thermal conductor, and where the walls of the plenum include openings for gas flow; and a process chamber connected to the radical source chamber through the plenum. The process chamber includes a substrate holder disposed below the plenum; a gas outlet below the substrate holder; and process chamber walls including a second thermal conductor, where the process chamber walls of the process chamber are thermally coupled to the walls of the plenum. 1. A plasma processing system comprising:a radical source chamber comprising a gas inlet, an electrode coupled to a radio frequency (RF) power source, wherein the electrode is configured to generate radicals within the radical source chamber, and an exit for radicals generated within the radical source chamber; wherein the plenum is made of a first thermal conductor, and', 'wherein walls of the plenum comprise openings for gas flow; and, 'a plenum attached to the exit of the radical source chamber,'} a substrate holder disposed below the plenum;', 'a gas outlet below the substrate holder; and', 'process chamber walls comprising a second thermal conductor, wherein the process chamber walls of the process chamber are thermally coupled to the walls of the plenum, wherein the plenum is configured to block ultraviolet radiation emanating from within the radical source chamber in a direct line of sight from the radical source chamber to the substrate holder., 'a process chamber connected to the radical source chamber through the plenum, the process chamber comprising2. The system of claim 1 , wherein the first thermal conductor ...

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Номер записи: 43
03-03-2022 дата публикации

PLASMA PROCESSING APPARATUS AND LOWER STAGE

Номер: US20220068603A1
Автор: Hirayama Masaki, IKEDA Taro, Kawakami Satoru, TANAKA Sumi
Принадлежит:

A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

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Номер записи: 44
03-03-2022 дата публикации

Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate

Номер: US20220068610A1
Автор: Adrian Herde, Edmund SCHÜNGEL, Silvio Gees
Принадлежит: EVATEC AG

In a vacuum treatment recipient, a plasma is generated between a first plasma electrode and a second plasma electrode so as to perform a vacuum plasma treatment of a substrate. To minimize at least one of the two plasma electrodes to be buried by a deposition of material resulting from the treatment process, that electrode is provided with a surface pattern of areas which do not contribute to the plasma electrode effect and of areas which are plasma electrode effective. The current path between the two electrodes is concentrated on the distinct areas which are plasma electrode effective, leading to an ongoing sputter- cleaning of these areas.

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Номер записи: 45
13-02-2020 дата публикации

Intake Oxidant Generator Systems and Methods

Номер: US20200049109A1
Автор: Hill Garrett
Принадлежит:

Disclosed are systems, methods, and devices for generating radicals in an air stream at the intake of an internal combustion engine, as well as increasing the thrust of such air streams into the engine. A plasma generator including plasma actuators, dielectric barrier discharge electrodes, or both is positioned in the intake stream. Plasma actuators are disposed on the interior surface of the plasma generator, exposed to the intake stream. Dielectric barrier discharge electrodes protrude into the intake air stream. Plasma, preferably DBD plasma, glow plasma, or filamentary plasma, is generated in the air intake stream, creating radicals in the stream, mixing the radicals in the stream, and reducing drag while increasing thrust of air in the intake stream. A concentric cylinder can be further disposed in the plasma generator, with further plasma actuators, dielectric barrier discharge electrodes, or both, on the interior and exterior surfaces of the cylinder. 1. An intake plasma generator for an internal combustion engine (ICE) having a combustion chamber coupled to an intake stream , comprising:a first and a second dielectric barrier discharge (DBD) electrode disposed at least partially proximal to the intake stream;wherein the first and second DBD electrodes generate a plurality of oxidants about a reaction zone in the intake stream, and wherein the plurality of oxidants treat matter in the intake stream to increase combustion efficiency in the combustion chamber.2. The intake plasma generator of claim 1 , wherein the first DBD electrode is a plasma actuator.3. The intake plasma generator of claim 1 , wherein the first and second DBD electrodes generate a hybrid-plasma in the reaction zone comprising at least a glide-arc plasma and a DBD plasma.4. The intake plasma generator of claim 2 , wherein the wall of the first DBD electrode is a ground electrode for a first high voltage electrode positioned outside the wall.5. The intake plasma generator of claim 4 , wherein ...

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Номер записи: 46
25-02-2016 дата публикации

Electric pressure systems for control of plasma properties and uniformity

Номер: US20160056018A1
Автор: Jianping Zhao, Lee Chen, Merritt Funk, Zhiying Chen
Принадлежит: Tokyo Electron Ltd

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

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Номер записи: 47
25-02-2016 дата публикации

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Номер: US20160056019A1
Автор: ANWAR Suhail, CHOI Soo Young, HOU LI, Kim Ki Woon, KURITA Shinichi, PARK Beom Soo, TINER Robin L., WANG Qunhua, WHITE John M., WON Tae Kyung
Принадлежит:

Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties. 1. A gas distribution plate assembly for a plasma processing chamber , comprising:a diffuser plate element having an edge, a center, a concave upstream side and a downstream side; and an orifice hole having a first diameter; and', 'a hollow cathode cavity that is downstream of the orifice hole and is at the downstream side, the hollow cathode cavity having a cone or cylinder shape and a second diameter at the downstream side that is greater than the first diameter, the second diameters or the depths or a combination of both of the cones or cylinders increases from the center to ...

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Номер записи: 48
25-02-2016 дата публикации

Systems and methods for treating material surfaces

Номер: US20160056020A1
Автор: Erik Charles WEMLINGER, Karl Richard ENGLUND, Patrick Dennis PEDROW, Rokibul ISLAM, William Pimakouan LEKOBOU
Принадлежит: Washington State University WSU

A system for treating at least one surface of a material may include a reaction vessel containing a first electrode and a second electrode separated by a gap. A power source may generate an electrical potential across the first electrode and the second electrode. A mixture of a non-reactive fluid and a reactive fluid exposed to the electrical potential may produce a back coronal plasma discharge from the second electrode to the first electrode. The reactive gas may further form a treatment material within the plasma. Depending on the reactive fluid introduced in the reaction vessel, a substrate disposed distally with respect to the second electrode may be coated with the treatment material, thereby increasing the hydrophobic character of the substrate. The treated substrate may be incorporated into a composite composition composed of a hydrophobic matrix.

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Номер записи: 49
25-02-2016 дата публикации

Plasma Ignition and Sustaining Apparatus

Номер: US20160056023A1
Автор: Benjamin Neil Martin Paul, Fischer Andreas
Принадлежит:

Apparatus for use with a vessel used to generate plasma are provided. One apparatus includes a first comb structure configured to partially wrap around a circumference of the vessel. The first comb structure has a first end and a second end, and a first separation is defined between the first end and the second end. The first comb structure defines a first plurality of fingers oriented perpendicular to the circumference of the vessel. The first comb structure is configured to be connected to a first end of a radio frequency (RF) coil. Also provided is a second comb structure configured to partially wrap around the circumference of the vessel. The second comb structure has a first end and a second end. A second separation is defined between the first end and the second end the second comb structure. The second comb structure defines a second plurality of fingers oriented perpendicular to the circumference of the vessel. The second comb structure is configured to be connected to a second end of the RF coil. Further, ends of the first plurality of fingers and ends of the second plurality of fingers are configured to face each other and maintain a third separation. 1. An apparatus , comprising ,a first comb structure configured to partially encircle a circumference of a vessel used to generate a plasma, the first comb structure having a first end and a second end, such that a first separation distance is defined between the first end and the second end, the first comb structure defining a first plurality of fingers oriented perpendicular to the circumference of the vessel, and wherein the first comb structure is configured to be connected to a first end of a coil that is configured to receive an RF driver signal for generating a plasma in the vessel; anda second comb structure configured to partially encircle the circumference of the vessel, the second comb structure having a first end and a second end, such that a second separation distance is defined between the first ...

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Номер записи: 50
25-02-2021 дата публикации

ACTIVE GAS GENERATION APPARATUS

Номер: US20210057192A1
Автор: ARITA Ren, Nishimura Shinichi, Watanabe Kensuke
Принадлежит: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION

In the present invention, a high-voltage side electrode component further includes a conductive film disposed on an upper surface of a dielectric electrode independently of a metal electrode. The conductive film is disposed between at least one gas ejection port and the metal electrode in plan view, and the conductive film is set to ground potential. 1. An active gas generation apparatus generating active gas obtained by activating source gas supplied to a discharge space , said active gas generation apparatus comprising:a first electrode component; anda second electrode component disposed below said first electrode component, whereinsaid first electrode component includes a first dielectric electrode and a first metal electrode disposed on an upper surface of said first dielectric electrode, said second electrode component includes a second dielectric electrode and a second metal electrode disposed on a lower surface of said second dielectric electrode, an AC voltage is applied across said first metal electrode and said second metal electrode, and, in a dielectric space in which said first dielectric electrode and said second dielectric electrode oppose each other, a region in which said first metal electrode and said second metal electrode overlap each other in plan view is included as said discharge space,said second dielectric electrode has at least one gas ejection port to externally jet said active gas, and a path from said discharge space to said at least one gas ejection port is defined as an active gas flow path, 'an orifice part disposed in said second dielectric electrode itself or below said second dielectric electrode, and having at least one through hole corresponding to said at least one gas ejection port,', 'said active gas generation apparatus further includes'} 'an auxiliary conductive film disposed on said upper surface of said first dielectric electrode independently of said first metal electrode, and', 'said first electrode component further ...

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Номер записи: 51
22-02-2018 дата публикации

Separation Grid for Plasma Chamber

Номер: US20180053628A1
Автор: Ryan M. Pakulski, Shawming Ma, Vijay M. Vaniapura, Vladimir Nagorny
Принадлежит: Mattson Technology Inc

Separation grids for plasma processing apparatus are provided. In some embodiments, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a processing chamber. The processing chamber can be separated from the plasma chamber. The apparatus can include a separation grid. The separation grid can separate the plasma chamber and the processing chamber. The apparatus can include a temperature control system. The temperature control system can be configured to regulate the temperature of the separation grid to affect a uniformity of a plasma process on a substrate. In some embodiments, a separation grid can have a varying thickness profile across a cross-section of the separation grid to affect a flow of neutral species through the separation grid.

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Номер записи: 52
22-02-2018 дата публикации

Symmetric VHF Source for a Plasma Reactor

Номер: US20180053630A1
Автор: Carducci James D., Chen Zhijang, Collins Kenneth S., Dorf Leonid, MARKOVSKY Igor, Misra Nipun, Ramaswamy Kartik, Rauf Shahid, YE Zheng John
Принадлежит:

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution. 1. A plasma reactor comprising:a vacuum chamber enclosure and a center electrode; (a) a hollow inner conductive cylinder coaxial with said center electrode and having a bottom edge contacting said center electrode;', '(b) a hollow outer conductive cylinder coaxial with and surrounding said inner conductive cylinder and having a bottom edge insulated from said center electrode, said inner and outer conductive cylinders having respective circular top edges;', '(c) an annular conductor extending between and electrically contacting said respective circular top edges of said inner and outer conductive cylinders;', '(d) a hollow center conductive cylinder coaxial with said inner and outer conductive cylinders and located between said inner and outer conductive cylinders, and having a bottom edge contacting said center electrode such that said inner conductive cylinder and center conductive cylinder are commonly electrically connected to said center electrode, said center conductive cylinder having a top edge facing and spaced from said annular conductor by an axial gap length; and, 'a coaxial resonator comprisinga VHF power generator coupled to said center conductor.2. The reactor of further comprising a connection between said outer cylindrical conductor and ground.3. The reactor of wherein a sum of the axial lengths of said inner and outer conductive cylinders and a radial length of said annular conductor is at least approximately equal to an integral fraction of a wavelength of the frequency of said VHF generator.4. The reactor of wherein said integral fraction is one-half.5. The reactor of wherein said axial gap length is selected to optimize resonance of said coaxial resonator at the frequency of said VHF generator.6. The reactor of wherein said center cylindrical conductor has a radius ...

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Номер записи: 53
22-02-2018 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20180053635A1
Автор: Misawa Hironobu, Okunishi Naohiko, Soeta Hidehito, Yamazawa Yohei
Принадлежит:

A plasma processing apparatus includes at least one asymmetry member that causes a non-uniformity of plasma density around a high frequency electrode in an azimuthal direction; and a plasma density distribution controller. The plasma density distribution controller includes a first conductor which has first and second surfaces facing opposite directions to each other and is electrically connected with the high frequency electrode, the first surface facing a portion of a rear surface of the high frequency electrode; a second conductor which includes a first connecting portion electrically connected with a portion of the second surface of the first conductor and a second connecting portion electrically connected with a conductive grounding member electrically grounded around the high frequency electrode; and a conductor moving unit for varying a position of at least one of the first conductor and the second conductor in an azimuthal direction of the high frequency electrode. 1. A plasma processing apparatus in which a high frequency electrode is provided in a processing chamber to mount a target object and , when a plasma process is performed on the target object in the processing chamber , a first high frequency power is applied to a rear surface of the high frequency electrode and a surface of the high frequency electrode is exposed to plasma of a processing gas , the apparatus comprising:at least one asymmetry member that causes a non-uniformity of plasma density around the high frequency electrode in an azimuthal direction;a plasma density distribution controller that is arranged depending on arrangement of the at least one asymmetry member to suppress the non-uniformity of plasma density around the high frequency electrode in the azimuthal direction; anda power feed rod connected with a central portion of the rear surface of the high frequency electrode and configured to supply the first high frequency power to the high frequency electrode, wherein the plasma ...

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Номер записи: 54
13-02-2020 дата публикации

SYSTEM AND METHOD FOR PARTICLE CONTROL IN MRAM PROCESSING

Номер: US20200051799A1
Автор: KUO Tsung-Han, WANG Po-Shu, WANG Wei-Ming
Принадлежит:

A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate. 1. A film deposition system comprising:a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; anda particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma,wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.2. The system of claim 1 , wherein the particle control unit comprises one of the following: at least one pair of electromagnetic coils and at least one pair of conductive electrodes.3. The system of claim 2 , wherein the at least one pair of electromagnetic coils and the at least one pair of conductive ...

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Номер записи: 55
05-03-2015 дата публикации

Dual discharge modes operation for remote plasma

Номер: US20150060265A1
Автор: Dmitry Lubomirsky, Soonam Park, Tae Seung Cho, Yi-Heng Sen
Принадлежит: Applied Materials Inc

Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.

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Номер записи: 56
03-03-2016 дата публикации

Ion injector and lens system for ion beam milling

Номер: US20160064260A1
Автор: Ivan L. Berry, III, Thorsten Lill
Принадлежит: Lam Research Corp

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.

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Номер записи: 57
20-02-2020 дата публикации

LINEAR PLASMA SOURCE WITH SEGMENTED HOLLOW CATHODE

Номер: US20200058473A1
Автор: CHAMBERS John, DATZ Marc, Wiame Hugues
Принадлежит:

The present invention relates to an electrode pair for generating a linear plasma wherein the electrodes () are segmented. More particularly, the present invention relates to a plasma source, for instance a hollow-cathode plasma source, comprising one or more plasma-generating electrode pairs wherein the electrodes are segmented. The present invention further relates to methods for controlling the uniformity of a linear plasma and also to methods for surface treating or coating substrates in a uniform way with linear plasma sources. 123-. (canceled)24. An electrode pair , comprising first and second equally segmented electrodes , wherein the first and second equally segmented electrodes: 'i. the generated plasma being a hollow cathode plasma;', 'a. have morphology and composition for electron emission and plasma generation and stability,'}b. are elongated along a lengthwise direction;c. are of essentially identical elongated shape and size and adjacent to each other with their lengthwise directions in parallel to each other; and i. each segment of the first electrode faces an equally sized segment of the second electrode, and', 'ii. each segment of the first electrode and its facing segment of the second electrode forms a pair of electrode segments., 'd. are each divided perpendicularly to their length into the same number of at least two segments, wherein25. The electrode pair according to claim 24 , wherein the size of the segments of at least one pair of electrode segments is different from the size of the electrode segments of at least one other pair of segments.26. The electrode pair according to claim 24 , wherein the size of all electrode segments is the same.27. The electrode pair according to claim 24 , wherein electrically insulating material or dark space is provided in between the neighboring segments of at least one pair of neighboring electrode segments.28. The electrode pair according to claim 24 , wherein all the segments of the first and second ...

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Номер записи: 58
20-02-2020 дата публикации

WATER MOLECULE SUPPLY DEVICE FOR PLASMA TORCH EXCITATION DEVICE

Номер: US20200058474A1
Автор: FONG WU-YU
Принадлежит:

A water molecule supply device for a plasma torch excitation device, comprising a flame outlet end formed at a bottom end of a plasma torch excitation device. The plasma torch excitation device has a water cavity therein, and the flame outlet end is fixed and provided with a mask body having a flame channel through which the plasma torch is ejected. A plurality of water guiding holes surrounding the flame channel are formed in the mask body, and the plurality of water guiding holes are respectively connected between the water cavity and the flame channel. The water molecules are supplied from the flame channel to be ejected so that water molecules contact the torch flame in the flame channel to capture the Fgas so as to react into hydrogen fluoride (HF) which is more easily subjected to water washing filtration. 1. A water molecule supply device for a plasma torch excitation device comprising:a flame outlet end formed at a bottom end of the plasma torch excitation device, the plasma torch excitation device comprising an electrode and an electrode housing having a conical core bore for use as an electric field of charged ions, the electrode projecting charged ions to generate a plasma torch flame in the core bore, and the plasma torch flame being ejected from the flame outlet end;a water cavity is formed around the electrode housing, and the water cavity guiding water into a loop in the water cavity through an inlet pipe and an outlet pipe, and the outer wall of the electrode housing being formed into a fin shape to contact the water in the loop in the water cavity; anda mask body fixed on the flame outlet end, the mask body having a flame channel for providing a plasma torch to eject, and the mask body being provided with a plurality of water guiding holes surrounding the flame channel, and the plurality of water guiding holes being respectively connected between the water cavity and the flame channel, water molecules being ejected from the flame channel to cause ...

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Номер записи: 59
20-02-2020 дата публикации

PLASMA TREATMENT METHOD

Номер: US20200058476A1
Автор: Hsieh Hung-Yuan
Принадлежит: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

A plasma treatment method is provided. The method includes generating a planar plasma in a plasma treatment chamber, observing an effective influence region of the planar plasma by using an optical observation system in which an observation lens has a transparent substrate and a fluorescent coating thereon, adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate to obtain a location and a thickness range of the effective influence region of the planar plasma, and then adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate to obtain a location and a thickness range of the effective influence region of the planar plasma. A location of a sample is adjusted to within the effective influence region, and a plasma treatment is then performed on the sample. 1. A plasma treatment method , comprising:generating a planar plasma in a plasma treatment chamber;observing an effective influence region of the planar plasma by using an optical observation system, wherein the optical observation system comprises an observation lens, and the observation lens comprises a transparent substrate, a fluorescent coating located on a surface of the transparent substrate, and a shelter coating between the transparent substrate and the fluorescent coating;adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate for obtaining a location and a thickness range of the effective influence region of the planar plasma;adjusting a location of a sample to within the effective influence region; andperforming a plasma treatment on the sample.2. The plasma treatment method of claim 1 , further comprising claim 1 , before adjusting the location of the sample claim 1 , adjusting a thickness and the location of the effective influence region of the planar plasma.3. The plasma ...

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Номер записи: 60
02-03-2017 дата публикации

APPARATUS FOR COATING A FILM IN A CONTAINER AND METHOD FOR COATING THE FILM

Номер: US20170062189A1
Автор: Tsai Chen-Der, WANG Yu-Ming, WENG CHIH-CHIANG
Принадлежит: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

An apparatus for coating a film in a container and a method for coating a film are provided. The apparatus includes a cylindrical housing having a containing space penetrating through both ends thereof; a first arc-shaped electrode and a second arc-shaped electrode surrounding and covering an outer side of the cylindrical housing with a gap formed between the first and second arc-shaped electrodes such that the first arc-shaped electrode is free from electrically connected to the second arc-shaped electrode; a first conductive ring and a second conductive ring surrounding on the first and second arc-shaped electrodes, respectively; an upper supporting seat and a lower supporting seat disposed at the both ends of the cylindrical housing, respectively, to form a sealed environment for the containing space; and a valve component furnished at the upper supporting seat and inserted into the container for providing a processing gas in a film-coating process. 1. An apparatus for coating a film in a container , comprising:a cylindrical housing having a containing space to contain the container, the containing space penetrating through both ends of the cylindrical housing;a first arc-shaped electrode and a second arc-shaped electrode surrounding and covering an outer side of the cylindrical housing with a gap formed between the first arc-shaped electrode and the second arc-shaped electrode such that the first arc-shaped electrode is free from electrically connecting to the second arc-shaped electrode;a first conductive ring fixed on the first arc-shaped electrode and a second conductive ring fixed on the second arc-shaped electrode, wherein the first conductive ring and the second conductive ring surround on the first arc-shaped electrode and the second arc-shaped electrode;an upper supporting seat and a lower supporting seat disposed at the both ends of the cylindrical housing, respectively, to form a sealed environment for the containing space; anda valve component ...

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Номер записи: 61
04-03-2021 дата публикации

Methods of optical device fabrication using an electron beam apparatus

Номер: US20210066036A1
Автор: Chien-An Chen, Kartik Ramaswamy, Ludovic Godet, Manivannan Thothadri, Rutger MEYER TIMMERMAN THIJSSEN, Yang Yang
Принадлежит: Applied Materials Inc

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

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Номер записи: 62
04-03-2021 дата публикации

Method for Processing a Workpiece

Номер: US20210066074A1
Автор: Chung Hua, Lu Xinliang, Ma Shawming, Xie Ting, Yang Michael X.
Принадлежит:

Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece. 1. A method of processing a workpiece in a plasma processing apparatus , the plasma processing apparatus comprising a processing chamber having an interior operable to receive a process gas and a workpiece support operable to support a workpiece , the method comprising:placing the workpiece on the workpiece support in the processing chamber;generating one or more species using a capacitively coupled plasma induced from a first process gas using a capacitively coupled plasma source;exposing the workpiece to the one or more species generated using the capacitively coupled plasma from the first process gas to provide nitridation on the workpiece;generating one or more species using an inductively coupled plasma induced from a second process gas using an inductively coupled plasma source; andexposing the workpiece to the one or more species generated using the inductively coupled plasma from the second process gas to increase a nitridation depth on the workpiece.2. (canceled)3. The method of claim 1 , wherein the first process gas comprises a nitrogen containing gas.4. The method of claim 3 , wherein the nitrogen containing gas comprises N claim 3 , NH claim 3 , or combinations thereof.5. The method of claim 1 , wherein the second process gas comprises a nitrogen containing gas.6. The method of claim 5 , wherein the nitrogen containing gas comprises N claim 5 , NH claim 5 , or combinations thereof.7. The method of claim 1 , wherein the second process gas comprises a fluorine containing gas.8. The ...

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Номер записи: 63
09-03-2017 дата публикации

METHOD OF MAKING A NANOSTRUCTURE AND NANOSTRUCTURED ARTICLES

Номер: US20170067150A1
Автор: Bates Daniel S., Berger Michael S., David Moses M., FRANKE Carsten, Seth Jayshree, Yu Ta-Hua, Zehentmaier Sebastian F.
Принадлежит:

A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, metal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared. 1. An article comprising:a flexible substrate comprising a nanostructured surface comprising a plurality of spaced apart nanostructures having random heights, at least one nanostructure having an aspect ratio greater than 1.5;a species layer deposited on the nanostructured surface having a thickness that varies continuously according to a height of the nanostructures; anda metal layer attached to the species layer.2. The article of claim 1 , wherein the species layer is present over substantially the entire nanostructured surface.3. The article of claim 1 , wherein the flexible ...

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Номер записи: 64
17-03-2022 дата публикации

PLASMA SOURCE WITH FLOATING ELECTRODES

Номер: US20220084796A1
Автор: Dzilno Dmitry A., Moore Robert B., Truong Quoc
Принадлежит: Applied Materials, Inc.

A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a spring which is disposed between electrodes and a dielectric ring. 1. A plasma source assembly comprising:a first electrode comprising a conductive plate having a top surface, a bottom surface, and an outer peripheral edge;a second electrode comprising a conductive plate having a top surface, a bottom surface, and an outer peripheral edge;a dielectric spacer separating the first electrode and the second electrode and disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode;a power feed electrically connected to the first electrode; anda first spring disposed between the bottom surface of the first electrode and the dielectric spacer; anda second spring disposed between the top surface of the second electrode and the dielectric spacer.2. The plasma source assembly of claim 1 , wherein the first spring is located adjacent to the outer peripheral edge of the first electrode and the second spring is located adjacent to the outer peripheral edge of the second electrode.3. The plasma source assembly of claim 2 , wherein each of the first spring and the second spring comprises a conductive material.4. The plasma source assembly of claim 2 , wherein each of the first spring and the second spring comprises a metal.5. The plasma source assembly of claim 4 , wherein the metal is an alloy.6. The plasma source assembly of claim 5 , wherein the alloy comprises cobalt claim 5 , chromium claim 5 , nickel and molybdenum.7. The plasma source assembly of claim 5 , further comprising a purge ring surrounding and in contact with the dielectric spacer and a power feed in electrical communication with the purge ring claim 5 , and wherein the alloy has an electrical resistivity that permits electrical communication between purge ring claim 5 , the first electrode and the purge ring and the second electrode.8. The plasma source ...

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Номер записи: 65
10-03-2016 дата публикации

PLASMA TREATMENT METHOD, PLASMA TREATMENT APPARATUS, AND PLASMA-TREATED LONG OBJECT

Номер: US20160071698A1
Автор: MIYAHARA Hidekazu, NAKAZAKI Junji, Ogawa Takashi, OKINO Akitoshi, SUIZU Keita, TSUTSUMI Hidenobu
Принадлежит:

A plasma treatment method subjects a long object to be treated to plasma treatment by placing the long object to be treated in contact with plasma, the density distribution of which varies while selectively passing the long object to be treated through an area having high plasma density so that a surface of the long object can be thoroughly and uniformly subjected to plasma treatment. The method is applied to a plasma treatment apparatus, and a plasma-treated long object can be obtained by the method. 1. A plasma treatment method in which a lengthy object to be treated is subjected to plasma treatment by being placed in contact with plasma , wherein:density distribution of plasma varies at least within a cross-section that is perpendicular to a conveying direction of the lengthy object to be treated; anda surface of the lengthy object to be treated is thoroughly and uniformly subjected to plasma treatment while being selectively passed through an area having high plasma density.2. A plasma treatment apparatus comprising:a first cylindrical portion in which plasma is generated therein;at least two or more of ring-shaped electrodes provided in a longitudinal direction on an outer circumferential surface of the first cylindrical portion, which electrodes generate plasma, the distribution density of which varies in a radial direction within the first cylindrical portion;a plasma generating gas introducing portion that introduces plasma generating gas into the first cylindrical portion; anda guide portion that is provided on the inner side of the first cylindrical portion and guides a lengthy object to be treated such as to advance through an area having high plasma density.3. The plasma treatment apparatus according to claim 2 , wherein:the guide portion is composed of a plurality of guide members which are arranged in the longitudinal direction of the first cylindrical portion; andthe plurality of guide members are formed into a shape enabling the lengthy object to be ...

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Номер записи: 66
09-03-2017 дата публикации

UPPER ELECTRODE STRUCTURE OF PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS, AND OPERATION METHOD THEREFOR

Номер: US20170069470A1
Автор: KAMBARA Keita, Murakami Koichi, NAGAI Kenji, Saito Michishige
Принадлежит:

An upper electrode structure includes a first plate, a second plate and an electrostatic attraction unit. The first plate has a first region, a second region and a third region which are concentrically arranged. Each of the regions is provided with a multiple number of gas discharge openings. The electrostatic attraction unit is provided between the first plate and the second plate and is configured to attract the first plate. The electrostatic attraction unit is equipped with a first to third heaters for the first to third regions. The electrostatic attraction unit and the second plate provide a first supply path, a second supply path and a third supply path through which gases are supplied into the first to third regions, respectively. A first gas diffusion space, a second gas diffusion space and a third gas diffusion space are formed in the electrostatic attraction unit. 1. An upper electrode structure of a capacitively coupled plasma processing apparatus , comprising:a first plate having a first region, a second region concentrically surrounding the first region, and a third region concentrically surrounding the second region, each of the first region, the second region and the third region being provided with a multiple number of gas discharge openings;a second plate provided with a flow path for a coolant; andan electrostatic attraction unit provided between the first plate and the second plate and configured to attract the first plate,wherein the electrostatic attraction unit is equipped with a first heater provided between the second plate and the first region, a second heater provided between the second plate and the second region and a third heater provided between the second plate and the third region,the electrostatic attraction unit provides, along with the second plate, a first supply path through which a gas is supplied into the first region, a second supply path through which a gas is supplied into the second region, and a third supply path through ...

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Номер записи: 67
27-02-2020 дата публикации

EDGE RING ASSEMBLY FOR A SUBSTRATE SUPPORT IN A PLASMA PROCESSING CHAMBER

Номер: US20200066495A1
Автор: Husain Anwar, NOORBAKHSH HAMID, WAKABAYASHI REYN
Принадлежит:

The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly. 1. A substrate support , comprising:an electrostatic chuck comprising a chucking electrode;an edge ring assembly positioned exterior to the electrostatic chuck, the edge ring assembly comprising an edge ring electrode;an outer silicon ring positioned above the edge ring assembly;an inner silicon ring positioned above the edge ring assembly within the outer silicon ring; andan insulating ring positioned above the edge ring assembly between the outer silicon ring and the inner silicon ring.2. The substrate support of claim 1 , wherein:the outer silicon ring is positioned exterior to the insulating ring to encircle the insulating ring; andthe insulating ring is positioned exterior to the inner silicon ring to encircle the inner silicon ring.3. The substrate support of claim 1 , wherein:the insulating ring comprises an inner recess formed within an inner surface of the insulating ring and an outer recess formed within an outer surface of the insulating ring;the inner silicon ring is at least partially positioned within the inner recess; andthe outer silicon ring is at least ...

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Номер записи: 68
19-03-2015 дата публикации

Symmetric vhf source for a plasma reactor

Номер: US20150075719A1
Автор: Igor Markovsky, James D. Carducci, Kartik Ramaswamy, Kenneth S. Collins, Leonid Dorf, Nipun Misra, Shahid Rauf, Zheng John Ye, Zhigang Chen
Принадлежит: Applied Materials Inc

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

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Номер записи: 69
17-03-2016 дата публикации

HEAT TRANSFER PLATE FOR A SHOWERHEAD ELECTRODE ASSEMBLY OF A CAPACITIVELY COUPLED PLASMA PROCESSING APPARATUS

Номер: US20160079041A1
Автор: Bise Ryan, Dhindsa Rajinder, Nam Sang Ki
Принадлежит: LAM RESEARCH CORPORATION

A heat transfer plate useful in a showerhead electrode assembly of a capacitively coupled plasma processing apparatus. The heat transfer plate includes independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly. 1. A heat transfer plate for use in a plasma processing chamber , the heat transfer plate comprising a plurality of independently controllable gas volumes configured such that a gas pressure within any given one of the plurality of independently controllable gas volumes does not affect another gas pressure within any other of the plurality of independently controllable gas volumes.2. The heat transfer plate of claim 1 , wherein the independently controllable gas volumes have a radial configuration claim 1 , a non-radial configuration claim 1 , a hexagonally divided configuration claim 1 , an octagonally divided configuration claim 1 , or a quadrant divided configuration.3. The heat transfer plate of claim 1 , comprising sixteen radially extending independently controllable gas volumes wherein eight gas volumes are located in an inner region of the heat transfer plate and eight gas volumes are located in an outer region of the heat transfer plate claim 1 , each independently controllable gas volume extending about 38 to 45° around the circumference of the heat transfer plate.4. The heat transfer plate of claim 1 , comprising a first cylindrical independently controllable gas volume and three concentric annular independently controllable gas volumes radially outward of the first cylindrical independently controllable gas volume.5. The heat transfer plate of claim 1 , wherein a gas can be supplied to the independently controllable gas volumes of the heat transfer plate selected from helium claim 1 , neon claim 1 , argon claim 1 , nitrogen claim 1 , or a mixture ...

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Номер записи: 70
07-03-2019 дата публикации

GLASS SEALED GAS DISCHARGE TUBES

Номер: US20190074162A1
Автор: BOURNS Gordon L., SHAK Peter, WANG Zuoyi
Принадлежит:

Glass sealed gas discharge tubes. In some embodiments, a gas discharge tube (GDT) can include an insulator substrate having first and second sides and defining an opening. The GDT can further include a first electrode implemented to cover the opening on the first side of the insulator substrate, and a second electrode implemented to cover the opening on the second side of the insulator substrate. The GDT can further include a first glass seal implemented between the first electrode and the first side of the insulator substrate, and a second glass seal implemented between the second electrode and the second side of the insulator substrate, such that the first and second glass seals provide a hermetic seal for a chamber defined by the opening and the first and second electrodes. 1. A gas discharge tube (GDT) device comprising:an insulator substrate having first and second sides and defining an opening;a first electrode implemented to cover the opening on the first side of the insulator substrate, and a second electrode implemented to cover the opening on the second side of the insulator substrate; anda first glass seal implemented between the first electrode and the first side of the insulator substrate, and a second glass seal implemented between the second electrode and the second side of the insulator substrate, such that the first and second glass seals provide a hermetic seal for a chamber defined by the opening and the first and second electrodes.2. The GDT device of claim 1 , wherein the insulator substrate includes a ceramic substrate.3. The GDT device of claim 1 , wherein each of the first and second electrode includes a copper material.4. The GDT device of claim 1 , wherein each of the first and second glass seals includes a reflowed glass layer.5. The GDT device of claim 4 , wherein the reflowed glass layer includes glass material from a glass layer that was on the respective side of the insulator substrate and the corresponding electrode.6. The GDT device ...

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Номер записи: 71
07-03-2019 дата публикации

PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20190074165A1
Автор: HONG Jung-Pyo, SUN Jong-Woo, SUNG JUNG-MO
Принадлежит:

A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate. 1. A plasma processing apparatus comprising:a process chamber having an interior in which plasma processing takes place;a substrate support disposed in the process chamber, the substrate support including an electrostatic chuck having a support surface dedicated to support a substrate to be plasma processed;a gas injector open to the interior of the process so as to inject a process gas into the process chamber;a plasma generator that transforms the process gas injected into the process chamber into plasma; anda plasma adjusting unit including a body comprising ferromagnetic material disposed radially outwardly of the support surface of the electrostatic chuck at substantially the same level as the support surface and an auxiliary power source electrically coupled to the body.2. The plasma processing apparatus of claim 1 , wherein the plasma generator comprises a high frequency electrode unit comprising at least one electrode and a high frequency power source electrically connected to the at least one electrode of the high frequency electrode unit.3. The plasma processing apparatus of claim 2 , wherein the at least one electrode of the high frequency electrode unit comprises a high frequency antenna.4. The plasma processing apparatus of claim 2 , wherein at least one electrode of the high frequency electrode unit comprises a flat plate electrode.5. The plasma processing apparatus of claim 1 , further comprising a bias power source electrically connected to the ...

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Номер записи: 72
17-03-2016 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20160079107A1
Автор: Aramaki Tooru, MORIMOTO Michikazu, Yokogawa Kenetsu
Принадлежит:

In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket. 1. A plasma processing apparatus comprising:a processing chamber that is disposed inside a vacuum chamber and an inside thereof is depressurized; anda sample stage that is disposed inside the processing chamber and on which a sample as a processing target is mounted and electrostatically chucked,the plasma processing apparatus which processes the sample using a plasma formed inside the processing chamber,wherein the sample stage includes a metal substrate formed as a ground potential, a dielectric film disposed on a top surface of the substrate and formed by thermal spraying, a sintered plate which is bonded with the dielectric film interposing an adhesive at an upper side of the dielectric film and has a film-like electrode therein to which high-frequency power is supplied, and a connector section which is disposed inside a through hole disposed inside the substrate, and supplies the high-frequency power being electrically connected to the film-like electrode,wherein the connector section includes a conductor section which is disposed inside the through hole, an upper part of which is bonded to the film-like electrode and a lower ...

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Номер записи: 73
16-03-2017 дата публикации

METHOD TO FILTER MACRO PARTICLES IN A CATHODIC ARC PHYSICAL VAPOR DEPOSITION (PVD), IN VACUUM

Номер: US20170076918A1
Автор: Ukhanov Sergey
Принадлежит: Argor Aljba SA

A method to filter macro particles in a cathodic arc physical vapor deposition (PVD) in vacuum is described, said method comprising the step of evaporating a material from a solid source () by means of application of the arc on the source, forming a plasma comprising electrons, micro particles (vapor) and ions of evaporated material, together with macro particles larger in size than the micro particles and ions. The arc is moved on the source at a speed V(superficial speed) at which the electrons, the micro particles and the ions of material evaporated at a point Pdeviate, from a path towards a substrate () to be coated facing the source, the macro particles formed at a point Ppreviously passed over by the arc, so as to self-clean the plasma of the macro particles and allow condensation of only the cleaned plasma on the substrate. 114-. (canceled)15. A method to filter macro particles in a cathodic arc physical vapor deposition (“PVD”) in vacuum , the method comprising:evaporating a material from a solid source by application of a pulsed arc having pulses of a predetermined duration on the solid source;forming a plasma including electrons, micro particles, and ions of evaporated material, together with macro particles larger in size than the micro particles and the ions of evaporated material; wherein the evaporated material includes carbon; 'moving the pulsed arc on the solid source at a speed at which the electrons, the micro particles, and the ions of evaporated material evaporated at a point, propel from a path towards a substrate to be coated facing the solid source; the macro particles formed at a point previously passed over by the pulsed arc so as to self-clean the plasma of the macro particles and allow condensation of only the cleaned plasma on the substrate;', 'wherein application of the pulsed arc on the solid source includeswherein the pulsed arc has a pulse with a current greater than 300 A and focuses the plasma in absence of a magnetic system; ...

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Номер записи: 74
16-03-2017 дата публикации

Plasma System, Chuck and Method of Making a Semiconductor Device

Номер: US20170076962A1
Автор: ENGELHARDT Manfred
Принадлежит:

A chuck, a system including a chuck and a method for making a semiconductor device are disclosed. In one embodiment the chuck includes a first conductive region configured to be capacitively coupled to a first RF power generator, a second conductive region configured to be capacitively coupled to a second RF power generator and an insulation region that electrically insulates the first conductive region from the second conductive region. 1. A chuck comprising:a first conductive region configured to be capacitively coupled to a first RF power signal;a second conductive region configured to be capacitively coupled to a second RF power signal; andan insulation region that electrically insulates the first conductive region from the second conductive region.2. The chuck according to claim 1 , wherein the first conductive region is an inner region of the chuck claim 1 , and wherein the second conductive region is an outer region of the chuck.3. The chuck according to claim 2 , wherein the first conductive region is disk shaped claim 2 , and wherein the second conductive region is a concentric ring.4. The chuck according to claim 1 , further comprising:a third conductive region configured to be capacitively coupled to a third RF power signal; anda second insulated region that electrically insulates the second conductive region from the third conductive region.5. A system comprising:a plasma chamber;a first electrode located in the plasma chamber; anda second electrode located in the plasma chamber and configured to receive a workpiece, wherein the second electrode comprises a first conductive region and a second conductive region that is electrically insulated from the first conductive region, wherein the first conductive region is configured to receive a first RF power and the second conductive region is configured to receive a second RF power.6. The system according to claim 5 , wherein the first RF power is different from the second RF power.7. The system according to ...

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Номер записи: 75
16-03-2017 дата публикации

SYSTEM TO DETECT WAFER ARCING IN SEMICONDUCTOR MANUFACTURING EQUIPMENT

Номер: US20170077002A1
Автор: Davis Tony, Johnson Michael, Singlevich Scott, Subrahmanyam Kommisetti
Принадлежит: Applied Materials, Inc.

Methods and systems for accurate arc detection in semiconductor manufacturing tools are disclosed. Such methods and systems provide real-time arc detection and near real-time notification for corrective actions during a semiconductor manufacturing process. Such methods and systems utilize data with high sample rate and wavelet analysis to provide for more accurate arc detection, which leads to more effective and cost efficient semiconductor manufacturing operations. 1. An arc detection system comprising:a substrate processing system for processing a plurality of substrates;a data acquisition system operatively coupled to receive an analog output signal from the substrate processing system and sample the analog output signal at a sample rate of at least 500 Hz to generate a sampled signal; and synchronize the sampled signal with the substrate ID and the process ID;', 'apply a wavelet analysis algorithm on the sampled signal to improve the signal-to-noise ratio; and', 'compare the results of the wavelet analysis to statistical data associated with the process ID to determine if an arc event occurred., 'a fault detection system operatively coupled to receive the sampled signal from the data acquisition system and receive a substrate identification (ID) and process ID from the processing system, the fault detection system configured to2. The arc detection system set forth in claim 1 , wherein the substrate processing system comprises:a substrate processing chamber;a substrate support configured to support a substrate within the chamber during a substrate processing operation;a processor configured to run a process recipe to perform a substrate processing operation within the chamber, the processor including a computer-readable memory configured to store the substrate ID that identifies a substrate being processed in the chamber and the process ID that identifies the process recipe used to process the substrate in the chamber; anda sensor that measures a parameter ...

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Номер записи: 76
24-03-2022 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20220093369A1
Автор: Kim Minsung, KIM Sungyeol, LEE Jang-Yeob, Yoo Hosun, Yun Jinyeong
Принадлежит:

A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region. 1. A plasma processing apparatus , comprising:a chamber providing a space for processing a substrate;a substrate stage configured to support the substrate within the chamber, and including a lower electrode;an upper electrode facing the lower electrode;a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate; anda plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer, wherein a capacitance of the local region is changed as the light is irradiated to the local region.2. The plasma processing apparatus of claim 1 , wherein the plasma adjustment assembly is in a shower head.3. The plasma processing apparatus of claim 2 , wherein the photoreactive material layer is in a shower head body under the upper electrode claim 2 , and the plurality of light sources are between the upper electrode and the ...

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Номер записи: 77
05-03-2020 дата публикации

METHOD AND APPARATUS FOR PLASMA PROCESSING

Номер: US20200075293A1
Автор: RANJAN ALOK, Ventzek Peter
Принадлежит:

In an embodiment, a plasma processing system includes a vacuum chamber, a substrate holder configured to hold a substrate to be processed where the substrate holder is disposed in the vacuum chamber. The system further includes an electron source disposed above a peripheral region of the substrate holder, the electron source being configured to generate an electron beam towards the peripheral region of the substrate holder. 1. A plasma processing system , comprising:a vacuum chamber;a substrate holder configured to hold a substrate to be processed and being disposed in the vacuum chamber; andan electron source disposed above a peripheral region of the substrate holder, the electron source being configured to generate an electron beam towards the peripheral region of the substrate holder.2. The system of claim 1 , wherein the electron source comprises an edge electrode coupled to a direct current (DC) supply node.3. The system of claim 2 , wherein a ratio of an inside radius of the edge electrode to a width of the edge electrode varies between 10:1 to 150:1.4. The system of claim 2 , wherein the edge electrode is covered by a dielectric material.5. The system of claim 2 , further comprising a central electrode disposed above a central region of the substrate holder claim 2 , the central electrode disposed within the edge electrode.6. The system of claim 5 , wherein the central electrode comprises doped semiconductor material.7. The system of claim 1 , wherein the system is configured to generate plasma within the vacuum chamber using an inductive process or a capacitive process.8. The system of claim 1 , wherein the electron source comprises an outlet configured to be coupled to an external source of electrons.9. A method of processing a semiconductor substrate using the system of claim 1 , the method comprising:placing the semiconductor substrate over the substrate holder; andprocessing the semiconductor substrate in the vacuum chamber.10. A method of processing ...

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Номер записи: 78
05-03-2020 дата публикации

EXHAUST PIPE DEVICE AND CLEANING DEVICE

Номер: US20200075297A1
Автор: Fukumizu Hiroyuki, Kurihara Kazuaki, MATSUBA Hiroshi, Oishi Akihiro, Yamauchi Takeshi
Принадлежит: Toshiba Memory Corporation

An exhaust pipe device according to an embodiment includes a pipe body; an internal electrode disposed in the pipe body; and a plasma generation circuit configured to generate plasma in the pipe body by using the internal electrode, wherein the exhaust pipe device is used as a part of an exhaust pipe disposed between a film forming chamber and a vacuum pump for exhausting an inside of the film forming chamber. 1. An exhaust pipe device comprising:a pipe body;an internal electrode formed in a pipe shape and disposed in the pipe body; anda plasma generation circuit configured to generate plasma in the pipe body by using the internal electrode,wherein the exhaust pipe device is used as a part of an exhaust pipe disposed between a film forming chamber and a vacuum pump for exhausting an inside of the film forming chamber.2. The device according to claim 1 , whereina metal electrode is used as the internal electrode andthe plasma generation circuit uses the pipe body as a ground electrode connected to a ground and applies a radio-frequency electric field between the internal electrode and the ground electrode.3. The device according to claim 1 , further comprising:an external electrode disposed outside the pipe body, whereina metal electrode is used as the internal electrode andthe plasma generation circuit uses the internal electrode as a ground electrode connected to a ground and applies a radio-frequency electric field between the internal electrode and the external electrode.4. The device according to claim 1 , wherein the internal electrode is formed in the same type of shape as a shape of the pipe body.5. The device according to claim 1 , wherein the internal electrode is formed in a hollow structure.6. The device according to claim 1 , wherein the internal electrode is formed in a cylindrical shape and a plurality of openings are formed to penetrate an outer circumferential surface of the internal electrode.7. The device according to claim 2 , wherein the pipe ...

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Номер записи: 79
02-04-2015 дата публикации

Novel electrodes for etch

Номер: US20150090401A1
Автор: AJAY Kumar, Amitabh Sabharwal, Banqiu Wu, Saravjeet Singh
Принадлежит: Individual

An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.

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Номер записи: 80
12-03-2020 дата публикации

ELECTRODE ASSEMBLY AND ETCHING APPARATUS

Номер: US20200083025A1
Автор: HE HUAILIANG
Принадлежит:

An electrode assembly and an etching apparatus are provided. The etching apparatus includes a chamber, a first electrode plate and a second electrode plate. The first electrode plate is arranged in the chamber and having a first central region and a first edge region. First gas inlet holes extend through the first central region, second gas inlet holes extend through the first edge region, and a cross sectional area of the first gas inlet hole is smaller than a cross sectional area of the second gas inlet hole. The second electrode plate is arranged in the chamber and includes a placement region and a second edge region, a substrate to be processed being disposed on the placement region. The chamber is further provided with a gas outlet arranged in the chamber, and the position of the gas outlet is lower than the position of the second electrode plate. 1. An electrode assembly , comprising:a first electrode plate having a first central region and a first edge region surrounding the first central region;first gas inlet holes configured to be connected to a gas intake device, the first gas inlet holes extending through the first central region; andsecond gas inlet holes configured to be connected to the gas intake device, the second gas inlet holes extending through the first edge region and surrounding the first gas inlet holes, and a cross sectional area of the first gas inlet hole being smaller than a cross sectional area of the second gas inlet hole.2. The electrode assembly according to claim 1 , wherein the first gas inlet holes extend through and arrange in the first central region in a uniform or partially uniform manner.3. The electrode assembly according to claim 1 , wherein the first gas inlet holes extend through and arrange in the first central region in a non-uniform manner.4. The electrode assembly according to claim 1 , wherein the second gas inlet holes extend through and arrange in the first edge region in a uniform or partially uniform manner.5. The ...

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Номер записи: 81
21-03-2019 дата публикации

PLASMA POLYMERIZATION COATING APPARATUS AND PROCESS

Номер: US20190085447A1
Автор: Zong Jian
Принадлежит:

Introduced here is a plasma polymerization apparatus. Example embodiments include a reaction chamber in a shape substantially symmetrical to a central axis. Some examples further include a rotation rack in the reaction chamber. The rotation rack may be operable to rotate relative to the reaction chamber about the central axis of the reaction chamber. Examples may further include reactive species discharge mechanisms positioned around a perimeter of the reaction chamber and configured to disperse reactive species into the reaction chamber in a substantially symmetrical manner from the outer perimeter of the reaction chamber toward the central axis of the reaction chamber, such that the reactive species form a polymeric coating on surfaces of the one or more substrates during said dispersion of the reactive species, and a collecting tube positioned along the central axis of the reaction chamber and having an air pressure lower than the reaction chamber. 1. A reaction chamber apparatus for performing plasma polymerization on the surface of one or more substrates , the apparatus comprising:a primary rotation rack operably coupled to a primary rotation shaft and configured to rotate along a central axis, the primary rotation rack including one or more arms extending from the primary rotation shaft and away from the central axis;a secondary rotation rack operably coupled to a secondary rotation shaft and configured to rotate on a secondary axis that is distal from the central axis, the secondary rotation shaft coupled to an arm of the one or more arms extending from the primary rotation shaft;one or more substrate platforms configured to carry the one or more substrates that are to receive the plasma polymerization coating, each substrate platform located on the secondary rotation rack; anda controller configured to transmit a rotation rate control signal to a rotation motor to rotate the primary rotation shaft and primary rotation rack at a controlled rotation rate.2. ...

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Номер записи: 82
25-03-2021 дата публикации

Substrate processing apparatus and method of manufacturing semiconductor device

Номер: US20210090861A1
Автор: Nobuo Ishimaru
Принадлежит: Kokusai Electric Corp

Described herein is a technique capable of reducing a damage to a reaction tube and an electrode when processing a substrate using plasma as well as generating the plasma stably. According to one aspect thereof, there is provided a substrate processing apparatus including: a process chamber; a buffer chamber where a gas is circulated before being supplied to a substrate; a pair of discharge electrodes extending parallel to each other in the buffer chamber; and a pair of sheath tubes configured to cover the pair of the discharge electrodes to prevent them from being exposed to the gas. A metal cap, whose outer diameter is equal to that of the discharge electrode and whose front end is rounded, is provided at one end of one or each of the discharge electrodes other than the other end of the one or each of the discharge electrodes supplied with electric power.

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Номер записи: 83
21-03-2019 дата публикации

SUBSTRATE SUPPORT WITH COOLED AND CONDUCTING PINS

Номер: US20190088518A1
Автор: KOH Travis Lee, KRAUS Philip Allan, Lee Wonseok
Принадлежит:

Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes. 1. A substrate support assembly , comprising:a substrate support formed of a dielectric material, the dielectric material having a plurality of openings of a first diameter formed therethrough, the substrate support comprising a sealing lip concentrically disposed on a surface, and proximate to an edge thereof, wherein the surface of the substrate support and sealing lip define a plenum when a substrate is clamped thereto, and an electrode planarly disposed in, and parallel to the surface of, the substrate support; anda plurality of conductive pins, each conductive pin disposed through a corresponding opening of the plurality of openings and having a second diameter that is less than the first diameter, wherein each respective conductive pin and opening defines a channel, and wherein the plenum and the channels form a gas volume.2. The substrate support assembly of claim 1 , further comprising a conductive base thermally coupled to the substrate support.3. The substrate support assembly of claim 2 , further comprising a gas conduit disposed through the conductive base for providing a gas to the gas volume claim 2 , wherein the gas conduit is in fluid communication with the gas volume.4. The substrate support assembly of claim 1 , wherein the electrode is a conductive mesh claim 1 , foil claim 1 , or plate.5. The substrate support assembly of claim 1 , wherein the electrode is electrically isolated from the plurality of conductive pins.6. The substrate support assembly of claim 2 , wherein the conductive base comprises an electrically conductive material.7. The substrate support assembly of ...

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Номер записи: 84
21-03-2019 дата публикации

PLASMA GENERATING DEVICE

Номер: US20190090341A1
Автор: Nose Koichi, TAKAHASHI Naoki, Ueyama Hiroyuki
Принадлежит: JCU CORPORATION

A plasma generating device with a pair of plate-like conductor parts each having a plurality of through-holes passing between main surfaces are opposed to each other with a predetermined gap therebetween. A gas is flowed into the through-holes from one side of the pair of plate-like conductor parts. Plasma discharge is generated in the gap by applying a high-frequency voltage between the pair of plate-like conductor parts and the generated plasma is flowed out to the other side of the pair of plate-like conductor parts. 113-. (canceled)14. A plasma generating device comprising:a pair of plate shaped conducting members, each having plural through holes penetrating between main surfaces, the conducting members facing each other via a prescribed gap to form a hollow electrode structure;one of the plate shaped conducting members rendering gas flow into the through holes from a side of the one of the conducting members;the pair of plate shaped conducting members, upon application of a high frequency voltage between the conducting members, to generate plasma discharge at the gap; andthe other of the plate shaped conducting members rendering the generated plasma flow out,wherein the plasma discharge is performed in a vacuum of 8 to 300 Pa.15. The plasma generating device according to claim 14 , wherein the pair of the plate shaped conducting members are so arranged that the plate shaped main surfaces face each other in parallel with an equal interval.16. The plasma generating device according to claim 15 , wherein the gap between the pair of the plate shaped conducting members is formed by separation of around 3 to 12 mm17. The plasma generating device according to claim 14 , wherein the plural through holes formed in the pair of the plate shaped conducting members are aligned to have the same axis between the one and the other of the plate shaped conducting members.18. The plasma generating device according to claim 14 , wherein each of the through holes has a cylindrical ...

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Номер записи: 85
19-03-2020 дата публикации

Wafer support table

Номер: US20200090964A1
Автор: Shuichiro Motoyama, Yutaka Unno
Принадлежит: NGK Insulators Ltd

A ceramic heater includes a ceramic substrate including, on an upper surface, a wafer mount surface that receives a wafer, and a heater electrode embedded in an inside of the ceramic substrate. The ceramic substrate includes a core portion and a surface layer portion disposed on a surface of the core portion. The surface layer portion has volume resistivity higher than volume resistivity of the core portion. The core portion has thermal conductivity higher than thermal conductivity of the surface layer portion. The surface layer portion is disposed over an area of at least one of a side surface of the core portion and an upper surface of the core portion, the area being not covered with the wafer.

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Номер записи: 86
06-04-2017 дата публикации

PLASMA CVD APPARATUS

Номер: US20170096737A1
Автор: HISANO Hirohiko, KOIZUMI Masafumi
Принадлежит: TOYOTA JIDOSHA KABUSHIKI KAISHA

The present invention provides a plasma CVD apparatus capable of suppressing abnormal electrical discharge even when a high voltage is used. A plasma CVD apparatus includes: a chamber forming a plasma space; and a power introduction terminal arranged in a terminal insertion hole that extends through a wall of the chamber , wherein: the power introduction terminal includes an insulator having a through hole and a rod-like electrical conductor inserted in the through hole ; one end of the rod-like electrical conductor is arranged in the chamber and the other end of the rod-like electrical conductor is electrically connected to a power source E that supplies power into the chamber ; a gap between an inner wall of the insulator and the rod-like electrical conductor is less than 2 mm; and a distance from said one end of the insulator , said one end being arranged in the plasma space inside the chamber , to a contact point between the insulator and the rod-like electrical conductor is greater than 10 mm 1. A plasma CVD apparatus , comprising:a chamber forming a plasma space; anda power introduction terminal arranged in a terminal insertion hole that extends through a wall of the chamber, wherein:the power introduction terminal includes an insulating member having a through hole and an electrical conductor inserted in the through hole;one end of the electrical conductor is arranged in the chamber and the other end of the electrical conductor is electrically connected to a power source that supplies power into the chamber;a gap between an inner wall of the insulating member and the electrical conductor is less than 2 mm;a distance from said one end of the insulating member, said one end being arranged in the plasma space inside the chamber, to a contact point between the insulating member and the electrical conductor is greater than 10 mm; andthe contact point is provided at a position out of an area that opposes the plasma space.2. (canceled)3. The plasma CVD apparatus ...

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Номер записи: 87
05-04-2018 дата публикации

PLASMA SYSTEM

Номер: US20180096820A1
Автор: Hsu Jui-Mei, Tsai Chen-Der, WENG CHIH-CHIANG
Принадлежит:

A plasma system comprises a first electrode which connecting to a power generator and a second electrode which is grounded and disposed corresponding to the first electrode, and a spacing between the first electrode and the second electrode. A conveying device transmits a substrate of non-conductive material into and through the spacing without touching the first electrode or the second electrode. A first gas-import device is positioned closed to the first electrode and comprises a plurality of first gas-import sections. A second gas-import device is positioned closed to the second electrode. A working gas imported into the spacing between the first electrode and the second electrode is stimulated by the power generator, and plasma is generated simultaneously on both sides of the substrate. 1. A plasma system , comprising:a first electrode;a second electrode oppositely disposing and having a spacing with respect to the first electrode;a conveying device transmitting a substrate passing through the spacing without contacting either the first electrode or the second electrode;a first gas-import device being positioned closer to the first electrode than to the spacing, and the first gas-import device comprises a plurality of first gas-import sections which each of the first gas-import section comprises a first gas-inlet and a first gas-outlet; anda second gas-import device being positioned closer to the second electrode than to the spacing;wherein the first gas-outlet of the first gas-import device faces and is communicative to the first electrode; andwherein the substrate is made of non-conductive material, the first electrode is connected to a power generator and the second electrode is electrically connected with ground potential, and a working gas imported into the spacing between the first electrode and the second electrode is stimulated by the power generator, and plasma is generated simultaneously on both sides of the substrate.2. The plasma system as claimed in ...

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Номер записи: 88
05-04-2018 дата публикации

Plasma generating apparatus, plasma processing apparatus, and method of controlling plasma generating apparatus

Номер: US20180096826A1
Автор: Takeshi Kobayashi
Принадлежит: Tokyo Electron Ltd

A plasma generating apparatus according to the present disclosure includes: a high frequency power supply that generates a high frequency power; a plasma generation electrode connected to the high frequency power supply and formed by a hollow tube in which cooling water is distributed; a conductivity meter that measures conductivity of the cooling water inside the plasma generation electrode; and a controller that controls output of the high frequency power supply based on the conductivity of the cooling water measured by the conductivity meter.

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Номер записи: 89
05-04-2018 дата публикации

ATMOSPHERIC PLASMA PROCESSING SYSTEMS AND METHODS FOR MANUFACTURE OF MICROELECTRONIC WORKPIECES

Номер: US20180096827A1
Автор: Byrns Brandon, deVilliers Anton J., Vukovic Mirko
Принадлежит:

Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed. 1. A method to process a microelectronic workpiece , comprising:generating a radio frequency (RF) signal;distributing the RF signal to one or more plasma sources within a process chamber having an atmospheric pressure, the atmospheric pressure being between 350 to 4000 Torr; andscanning the one or more plasma sources across a microelectronic workpiece to apply plasma gasses generated by the one or more plasma sources to the microelectronic workpiece.2. The method of claim 1 , wherein the microelectronic workpiece comprises a semiconductor wafer.3. The method of claim 1 , further comprising rotating the microelectronic workpiece with respect to the one or more plasma sources to scan the one or more plasma sources with respect to a microelectronic workpiece.4. The method of claim 1 , wherein the one or more plasma sources comprise a plurality of plasma sources connected together as an array of plasma sources.5. The method of claim 4 , wherein the scanning comprises linearly moving the array of plasma sources with respect to the microelectronic workpiece.6. The method of claim 5 , wherein the scanning further comprises rotating the microelectronic ...

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Номер записи: 90
03-07-2014 дата публикации

Electrode Arrangement for a Dielectrically Limited Gas Discharge

Номер: US20140182879A1
Автор: Busse Benedikt, Kopp Matthias, Nolte Michael, Scharf Johannes, SEGL Maximilian, STORCK Karl-Otto, TRUTWIG Leonhard, WANDKE Dirk
Принадлежит: CINOGY GMBH

The invention relates to a flexible flat electrode arrangement for a dielectrically limited gas discharge, comprising a central region (), an edge region, and a flat electrode () which conducts a high-voltage potential and which is embedded in a flat dielectric that forms an upper face () and a contact face (). The invention allows the active surface of the electrode arrangement to be matched to the size of a surface to be treated in that the flat dielectric is in the form of a flat strip () wound into a spiral at least in the edge region, and the electrode () is formed by at least one electric conductor which runs in the longitudinal direction of the wound strip () and which leads into an end surface () of the strip (). 13141061141131. A flexible , flat electrode arrangement for a dielectric barrier gas discharge , composing a central region () and a peripheral region and comprising a flat electrode () conducting a high voltage potential , which electrode is embedded in a flat dielectric forming an upper side () and a resting side () , characterized in that the flat dielectric has , at least in the peripheral region , the form of a flat strip () wound in helical fashion , and the electrode () is formed by at least one electrical conductor which runs in the longitudinal direction of the wound-up strip () and opens out into an end face () of the strip ().2113313. The electrode arrangement as claimed in claim 1 , characterized in that the electrical conductor is at least one narrow conductor running in the strip () from the end face () to the central region () and from there back to the end face ().311. The electrode as claimed in claim 1 , characterized in that the electrical conductor is a conductor wire () with a round or oval cross section.4141713. The electrode arrangement as claimed in claim 1 , characterized in that the electrode () makes contact with a contact-making element () in the region of the end face () and is electrically insulated from the surrounding ...

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Номер записи: 91
13-04-2017 дата публикации

PLASMA GENERATOR, ANNEALING DEVICE, DEPOSITION CRYSTALLIZATION APPARATUS AND ANNEALING PROCESS

Номер: US20170103876A1
Автор: FUJINO Seiji, TIAN Xiangjun
Принадлежит:

A plasma generator, a plasma annealing device, a deposition crystallization apparatus and a plasma annealing process are disclosed. The plasma generator includes: a gas chamber; a gas intake member configured to introduce a gas into the gas chamber; a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma; a cooling water circulation member configured to control a temperature of the plasma generator; and a plasma beam outlet disposed on a top face of the gas chamber. The plasma annealing device including the plasma generator can generate a plasma beam, which can be used in annealing to amorphous silicon and crystallize the amorphous silicon to polycrystalline silicon. 1. A plasma generator comprising:a gas chamber;a gas intake member configured to introduce a gas into the gas chamber;a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma;a cooling water circulation member configured to control a temperature of the plasma generator; anda plasma beam outlet disposed on a top face of the gas chamber.2. The plasma generator according to claim 1 , wherein the anode is disposed in the gas chamber claim 1 , the cathode is provided as a top face of the gas chamber or is disposed on the top face of the gas chamber.3. The plasma generator according to claim 1 , wherein the anode and the cathode are replaceable or have an adjustable size.4. The plasma generator according to claim 1 , further comprising an insulating plate claim 1 , wherein the insulating plate is disposed below the anode.5. The plasma generator according to claim 1 , wherein the cooling water circulation member comprises a cooling water pipe claim 1 , and the cooling water pipe is disposed in the anode and in a side wall of the gas chamber.6. A plasma annealing device comprising a vacuum chamber and the plasma generator according to .7. ...

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Номер записи: 92
29-04-2021 дата публикации

APPARATUS, PROBE ASSEMBLY AND METHODS FOR TREATING CONTAINERS

Номер: US20210121590A1
Автор: Galloway Craig, Mitchener James, Ormonde Gabriel, Shi Michelle (Meng), Stevens Ronald, Twain Kenneth
Принадлежит:

The invention provides an apparatus for treating surfaces of a container. The apparatus comprises an openable reaction chamber housing, an exhaust escapement and an electrode assembly. The electrode assembly comprises a probe assembly coupled with a power source, the probe assembly comprising an elongate wand body, and a helically configured primary electrode and a helically configured counter electrode disposed about an outer circumferential surface of the wand body in an alternating helical configuration. The elongate wand body has a fluid passageway defined therewithin, and one or more outlet openings that are formed on an outer circumferential surface of the wand body and that extend inward through said outer circumferential surface and upto the fluid passageway. One or both of the primary electrode and the counter electrode may be energizable by the power source. 1. An apparatus for treating surfaces of a container comprising:an openable reaction chamber housing defining an interior vacuum chamber configured to house a container to be treated;an exhaust escapement configured to permit gases to exit the interior vacuum chamber; andan electrode assembly configured for coupling with a power source, and positioned at least partially within the interior vacuum chamber, such that a part of the electrode assembly is positioned within an interior cavity of the container housed within the interior vacuum chamber, the electrode assembly comprising: an elongate wand body having a fluid passageway defined therewithin, and one or more outlet openings that are formed on an outer circumferential surface of the wand body and that extend inward through said outer circumferential surface and upto the fluid passageway, wherein said one or more outlet openings enable one or more precursor gases passing through said fluid passageway to enter the interior vacuum chamber or the interior cavity of the container housed within the interior vacuum chamber;', 'a helically configured ...

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Номер записи: 93
02-04-2020 дата публикации

Apparatus and Method to Electrostatically Remove Foreign Matter from Substrate Surfaces

Номер: US20200101500A1
Автор: Bassett Derek, Hurd Trace Quentin, Rotondaro Antonio Luis Pacheco, Simms Ihsan
Принадлежит:

In one exemplary embodiment, described herein are innovative techniques for reducing the attractive force between particles and a substrate surface to aid in the removal of particles from the substrate surface. More specifically, a multi-electrode chuck is utilized to assist in cleaning a substrate. The multi-electrode chuck is utilized to reduce the attractive forces between particles and the substrate and to move the loosened particles that are present on the substrate surface. The electrodes of the chuck are biased with alternating current (AC) voltages with a phase shift between the electrode bias waves. The resulting electric field wave on the substrate surface loosens the particles by polarizing the particles and moves the loosened particles across the substrate. 1. A substrate processing system , the substrate processing system configured to remove particles from a surface of a substrate , the substrate processing system comprising:a chuck, the chuck configured for placement of the substrate thereon;a plurality of electrodes within the chuck, the electrodes provided in a repeating spaced pattern across the chuck; anda plurality of voltages coupled to the plurality of electrodes, the plurality of voltages being alternating voltages, the plurality of voltages including a plurality of different voltage signals, the plurality of different voltage signals being phase shifted from each other,wherein the coupling of the plurality of electrodes and the plurality of voltages is provided so that different of the plurality of different voltage signals are provided to adjacent electrodes, the different of the plurality of different voltages signals being phase shifted from each other, an arrangement of the plurality of electrodes and the plurality of voltages being such that an alternating electric potential field is created at the surface of the substrate, andwherein the plurality of electrodes have a width that equals a height between a top of the electrodes and an ...

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Номер записи: 94
02-06-2022 дата публикации

PLASMA PROCESSING APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20220172926A1
Автор: HAN Dong Hee, Kim Beom Rae, KIM Dong Wan, Lee Jun Ho, LEE Sang-Ho, Lee Yong Woo, Na Dong Hyeon, Noh Young Jin, SHIM Seung Bo
Принадлежит:

A method for fabricating a semiconductor device includes providing a wafer on a lower electrode inside a plasma processing apparatus. A first power having a first and second frequency is provided to the lower electrode. A second power is provided to an RF induction electrode through the lower electrode. A third power having the second frequency is released outside of a chamber. A plasma process is performed on the wafer while the third power is released. The RF induction electrode is disposed inside an insulating plate surrounding a sidewall of the lower electrode. The RF induction electrode is spaced apart front the lower electrode. The RF induction electrode has an annular shape surrounding the sidewall of the lower electrode. The first power is controlled by a first controller, and the third power is controlled by a second controller different from the first controller. 1. A method for fabricating a semiconductor device , comprising:providing a wafer on a lower electrode disposed inside a plasma processing apparatus;providing a first power of a first frequency and a second frequency, lower than the first frequency, to the lower electrode;inducing a second power, lower than the first power, within a radio frequency (RF) induction electrode using the lower electrode;releasing a third power, lower than the second power and having the second frequency, to an outside of a chamber; andperforming a plasma process on the wafer while the third power is released to the outside of the chamber,wherein the RF induction electrode is disposed inside an insulating plate that at least partially surrounds a sidewall of the lower electrode,wherein the RF induction electrode is spaced apart from the lower electrode, and the RF induction electrode has an annular shape at least partially surrounding the sidewall of the lower electrode, andwherein the first power is controlled by a first controller, and the third power is controlled by a second controller different from the first ...

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Номер записи: 95
02-06-2022 дата публикации

PLASMA TREATMENT ARRANGEMENT AND METHOD FOR ADAPTING THE SIZE OF A SUPPORT AREA OF THE PLASMA TREATMENT ARRANGEMENT TO THE SIZE OF THE SURFACE TO BE TREATED

Номер: US20220172929A1
Автор: LETTKE Ronny, WANDKE Dirk
Принадлежит:

In a plasma treatment arrangement for carrying out dielectrically impeded plasma discharge onto a surface to be treated having a flat electrode unit () which has a treatment side, and a control unit () which supplies at least one electrode () of the electrode unit () with a high-voltage AC potential for a power which is required for plasma generation between the at least one electrode () and a counterelectrode which forms a reference potential, wherein the at least one electrode () which receives the high-voltage AC potential is shielded with a flat dielectric (), at least on the treatment side, and wherein the flat electrode unit is designed to reduce the size of its support area on the surface to be treated for the purpose of adaptation to the size of the surface to be treated, the adaptation of the support area of the flat electrode unit () becomes possible in an unproblematical manner on account of the control unit () having a device () for determining the size of the adapted support area and a control device for adjusting the power to be output to the at least one electrode () in accordance with the determined size of the support area. 141119419197111419. A plasma treatment arrangement for carrying out a dielectric barrier plasma discharge on a surface to be treated , comprising a planar electrode unit () that has a treatment side , and a control unit () which supplies at least one electrode () of the electrode unit () with a high-voltage AC potential required for generating a plasma between the at least one electrode () and a counter electrode that forms a reference potential , wherein the at least one electrode () receiving the high-voltage AC potential is shielded by a planar dielectric () at least toward the treatment side and wherein the planar electrode unit is formed to reduce the size of its contact face on the surface to be treated for the adaptation to the size of the surface to be treated , characterized in that the control unit () has a device () ...

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Номер записи: 96
02-06-2022 дата публикации

Wafer processing apparatus

Номер: US20220172930A1
Автор: Hyonwook RA, Jongchul Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A wafer processing apparatus is provided. The wafer processing apparatus includes a chamber body defining a plasma region configured that plasma is generated in the plasma region, a wafer support arranged in the chamber body and configured to support a wafer, first and second electrodes arranged between the wafer support and the plasma region and having apertures configured to guide a path of ions of the plasma, a first power source configured to apply, to the first electrode, a voltage that is higher than a voltage applied to the second electrode, and a second power source configured to apply, to the wafer support, a voltage that is higher than the voltage applied to the second electrode.

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Номер записи: 97
29-04-2021 дата публикации

NANOSECOND PULSER PULSE GENERATION

Номер: US20210125812A1
Автор: Carscadden John, Miller Kenneth, Quinley Morgan, Slobodov Ilia, Ziemba Timothy
Принадлежит:

Some embodiments include a high voltage pulsing power supply. A high voltage pulsing power supply may include: a high voltage pulser having an output that provides pulses with an amplitude greater than about 1 kV, a pulse width greater than about 1 μs, and a pulse repetition frequency greater than about 20 kHz; a plasma chamber; and an electrode disposed within the plasma chamber that is electrically coupled with the output of the high voltage pulser to produce a pulsing an electric field within the chamber. 1. A high voltage pulsing power supply comprising:a high voltage pulser having an output that provides pulses with an amplitude greater than about 1 kV, a pulse width less than about 1 μs, and a pulse repetition frequency greater than about 20 kHz;a plasma chamber; andan electrode disposed within the plasma chamber that is electrically coupled with the output of the high voltage pulser to produce an electric field within the plasma chamber.2. The high voltage pulsing power supply according to claim 1 , wherein an inductance between the output of the high voltage pulser and at the electrode is less than about 10 μH.3. The high voltage pulsing power supply according to claim 1 , wherein the capacitance between the output of the high voltage pulser and ground is less than about 10 nF.4. The high voltage pulsing power supply according to claim 1 , further comprising a control module that measures the voltage of the output pulses.5. The high voltage pulsing power supply according to claim 1 , further comprising:a bias capacitor disposed between the high voltage pulser and the electrode; andbias compensation power supply electrically coupled with the high voltage pulser and the electrode, the bias compensation power supply produces a voltage across the bias capacitor.6. The high voltage pulsing power supply according to claim 1 , further comprising a resistive output stage electrically coupled with the high voltage pulser and the electrode that removes charge from a ...

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Номер записи: 98
28-04-2016 дата публикации

APPARATUS FOR THE PLASMA TREATMENT OF SURFACES AND A METHOD FOR TREATING SURFACES WITH PLASMA

Номер: US20160118230A1
Автор: HÄHNEL Marcel
Принадлежит: TESA SE

Apparatus and method for the plasma treatment of surfaces with a first electrode and a second electrode, the apparatus and method comprises an alternating voltage source between the first and second electrodes, and an electrical field forming, at least between the first and second electrodes, an effective area, which is arranged in front of the first electrode and in which the surface to be treated can be positioned, wherein the second electrode is arranged closer to the effective area than the first electrode. The apparatus and method provides at least one process gas channel for at least one stream of process gas with at least one outlet at the first electrode, wherein the at least one outlet points in the direction of the effective area, the at least one stream of process gas impinges on the electrical field, the electrical field converts the at least one stream of process gas into a stream of plasma, and the stream of plasma impinges on the effective area. 1. An apparatus for the plasma treatment of surfaces , the apparatus comprising:a first electrode, a second electrode, an alternating voltage source between the first electrode and the second electrode, and an electrical field, forming at least between the first electrode and the second electrode;an effective area, arranged in front of the first electrode, in which a surface to be treated can be positioned, wherein the second electrode is arranged closer to the effective area than the first electrode;at least one process gas channel for at least one stream of process gas with at least one outlet at the first electrode, wherein the at least one outlet points in the direction of the effective area, the at least one stream of process gas impinges on the electrical field, the electrical field converts the at least one stream of process gas into a stream of plasma, and the stream of plasma impinges on the effective area.2. The apparatus according to claim 1 , wherein the first electrode is formed as a rod and is ...

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Номер записи: 99
09-06-2022 дата публикации

SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20220181125A1
Автор: Hara Daisuke, TAKEDA Tsuyoshi
Принадлежит: KOKUSAI ELECTRIC CORPORATION

There is provided is a technique that includes: a process chamber in which at least one substrate is processed; and at least one buffer chamber in which plasma is formed, wherein the at least one buffer chamber includes at least two application electrodes of different lengths to which high frequency electric power is applied, and a reference electrode subjected to a reference potential. 1. A substrate processing apparatus comprising:a process chamber in which at least one substrate is processed; andat least one buffer chamber in which plasma is formed,wherein the at least one buffer chamber includes at least two application electrodes of different lengths to which high frequency electric power is applied, and a reference electrode subjected to a reference potential.2. The substrate processing apparatus of claim 1 , wherein the at least one substrate includes a plurality of substrates claim 1 , andwherein the substrate processing apparatus further comprises a substrate support configured to mount and support the plurality of substrates.3. The substrate processing apparatus of claim 1 , wherein the lengths of the at least two application electrodes are set to be different in a stack direction of the at least one substrate.4. The substrate processing apparatus of claim 1 , further comprising an electrode protection tube configured to protect the at least two application electrodes and the reference electrode.5. The substrate processing apparatus of claim 4 , wherein the electrode protection tube is formed in a U-shape in an upper portion of the at least one buffer chamber claim 4 , and is configured such that length of at least one of the at least two application electrodes is adjustable in the electrode protection tube formed in the U-shape.6. The substrate processing apparatus of claim 5 , wherein the at least one of the at least two application electrodes is disposed to be folded back at a U-shaped bent portion of the electrode protection tube such that at least one ...

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Номер записи: 100