APPARATUS AND METHOD FOR ENDPOINT DETECTION

An apparatus to control processing conditions for a substrate. The apparatus may include a current measurement component to perform a plurality of extraction current measurements for extraction current in a processing apparatus housing the substrate, the extraction current comprising ions extracted from a plasma and directed to the substrate; and an endpoint detection component comprising logic to generate an endpoint detection signal based upon a change in extraction current during the plurality of extraction current measurements.

Ion implantation for superconductor tape fabrication

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

METHOD FOR EPITAXIAL LAYER OVERGROWTH

Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.

METHOD OF ETCHING A WORKPIECE

A workpiece is implanted to a first depth to form a first amorphized region. This amorphized region is then etched to the first depth. After etching, the workpiece is implanted to a second depth to form a second amorphized region below a location of the first amorphized region. The second amorphized region is then etched to the second depth. The implant and etch steps may be repeated until structure is formed to the desired depth. The workpiece may be, for example, a compound semiconductor, such as GaN, a magnetic material, silicon, or other materials. 1. A method of forming a structure in a workpiece comprising:implanting a workpiece to a first depth to form a first amorphized region;etching said first amorphized region to said first depth;implanting a workpiece to a second depth to form a second amorphized region below a location of said first amorphized region after said etching of said first amorphized region; andetching said second amorphized region to said second depth.2. The method of claim 1 , further comprising:implanting a workpiece to a third depth to form a third amorphized region below a location of said second amorphized region after said etching of said second amorphized region; andetching said third amorphized region to said third depth.3. The method of claim 1 , further comprising forming a mask on said workpiece.4. The method of claim 1 , wherein said workpiece comprises a compound semiconductor.5. The method of claim 1 , wherein said workpiece comprises a magnetic material.6. The method of claim 1 , wherein said workpiece comprises silicon.7. The method of claim 1 , wherein said workpiece in said first amorphized region comprises a first material and said workpiece in said second amorphized region comprises a second material different from said first material.8. The method of claim 7 , wherein said implanting said workpiece to said first depth occurs at a first energy and wherein said implanting said workpiece to said second depth occurs at a ...

METHOD OF IMPLANTING A WORKPIECE TO IMPROVE GROWTH OF A COMPOUND SEMICONDUCTOR

A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a periphery. This workpiece also may be implanted one or more times to form a pattern of lines, which may be a grid, a series of circles, or other shapes. The distance between certain pairs of lines may be different across the workpiece. 1. A method of implanting a workpiece comprising:implanting a workpiece such that said workpiece has a dose at a center different from a dose at a periphery; andgrowing a compound semiconductor on said workpiece after said implanting.2. The method of claim 1 , wherein said implanting uses ions comprising oxygen claim 1 , silicon claim 1 , nitrogen claim 1 , germanium claim 1 , or carbon.3. The method of claim 1 , wherein said dose at said center is higher than said dose at said periphery.4. The method of claim 1 , wherein said dose at said center is lower than said dose at said periphery.5. The method of claim 1 , wherein said implanting comprises:performing a first ion implant into said workpiece to form a first plurality of lines;rotating said workpiece; andperforming a second ion implant into said workpiece to form a second plurality of lines thereby forming a grid with said first plurality of lines and said second plurality of lines.6. A method of implanting a workpiece comprising:implanting a workpiece to form at least three implanted regions that are adjacent, wherein a first distance between a first implanted region and a second implanted region is different from a second distance between said second implanted region and a third implanted region; andgrowing a compound semiconductor on said workpiece after said implanting.7. The method of claim 6 , wherein said implanting comprises:performing a first ion implant into said workpiece to form a first plurality of lines;rotating said workpiece; andperforming a second ion implant into said ...

COMPOUND SEMICONDUCTOR GROWTH USING ION IMPLANTATION

A workpiece is implanted to affect growth of a compound semiconductor, such as GaN. Implanted regions of a workpiece increase, reduce, or prevent growth of this compound semiconductor. Combinations of implants may be performed to cause increased growth in certain regions of the workpiece, such as between regions where growth is reduced. Growth also may be reduced or prevented at the periphery of the workpiece.

HETEROEPITAXIAL GROWTH USING ION IMPLANTATION

In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features. 1. A method of growing a heteroepitaxial layer , comprising:providing a substrate containing patterned features having sidewalls;directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed; anddepositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.2. The method of wherein the providing the substrate comprises:providing a set of mask features on the substrate; andetching the substrate to define the set of patterned features within the substrate.3. The method of wherein the directing the ions takes place while the set of mask features is disposed on the substrate claim 2 , the method further comprising removing the set of mask features before the depositing the heteroeptiaxial layer.4. The method of wherein the set of mask features is photoresist.5. The method of wherein the sidewalls are at a non-perpendicular angle with respect to a surface of the substrate.6. The method of wherein the heteroepitaxial layer comprises a compound semiconductor.7. The method of wherein the heteroepitaxial layer comprises a Ga:N material.8. The method of wherein the substrate comprises single crystalline silicon or single crystalline sapphire.9. The method of claim 1 , wherein the exposure is a first set of exposures claim 1 , the ions are first ions claim 1 , and the first set of exposures comprises one or more exposures in which the ...

CLIENT-SIDE WATERMARKING USING HYBRID I-FRAMES

A system and method for client-side watermarking of digital content using hybrid Intra-Frames (I-Frames) are provided. In general, a content source provides a compressed video stream and a hybrid I-Frame stream to a client device via a network. The hybrid I-Frame stream includes a number of low-loss I-Frames corresponding to select ones of the I-Frames in the compressed video stream to be used for client-side watermarking. The client device watermarks the I-Frames in the hybrid I-Frame stream, optionally compresses the watermarked I-Frames, and replaces the select ones of the I-Frames in the compressed video stream with the watermarked and optionally compressed I-Frames to provide a watermarked version of the compressed video stream. 1. A method comprising:receiving a first video content in a compressed format having at least one lossy video frame;receiving a second video content separate from the first video content, the second video content having at least one low loss video frame corresponding to the at least one lossy video frame;watermarking the at least one low loss video frame received from the second video content to produce a watermarked low loss video frame; andreplacing the at least one lossy video frame from the first video content with the watermarked low loss video frame.2. The method as recited in claim 1 , wherein the at least one lossy video frame has a first compression level and the method further comprises:compressing the watermarked low loss video frame to the first compression level prior to replacing the at least one lossy video frame from the first video content with the watermarked low loss video frame.3. The method as recited in claim 1 , wherein the at least one lossy video frame is encoded with a lossless algorithm.4. The method as recited in claim 1 , wherein the at least one low loss video frame is encoded with a lossless algorithm.5. The method as recited in claim 1 , where each of the first video content and the second video content ...

LATE-BINDING OF ADVERTISEMENTS USING RDMA CONNECTIVITY

A system and method are provided for inserting customized or personalized advertisements into video content presented to a viewer. In general, the system includes an ad content server and a late-binding ad insertion system serving a number of client devices including a client device of the viewer. Utilizing Remote Direct Memory Access (RDMA), the late-binding ad insertion system obtains customized advertisements for the viewer from the ad content server. The late-binding ad insertion system then provides the video content having the customized advertisements inserted therein to the client device for presentation to the viewer. 1transmitting via a multicast communication channel to the plurality of ad insertion systems a memory map including a first advertisement category with first category metadata and a random access memory (RAM) disk location;receiving a request to register with the multicast communication channel from one of the plurality of ad insertion systems;completing a remote direct memory access (RDMA) transfer from an advertisement database to the RAM disk location a first advertisement including advertisement content, advertising metadata, and an advertisement ID;receiving an RDMA transfer request for the RAM disk location from the one of the plurality of ad insertion systems;transmitting the first advertisement from the RDMA requested RAM disk location to the one of the plurality of ad insertion systems;receiving an acknowledgement from the one of the plurality of ad insertion systems, wherein the acknowledgement includes the advertisement ID and information indicating whether the first advertisement was viewed and the length of time that the first advertisement was viewed;using the acknowledgement to determine whether to replace the first advertisement with a second advertisement in the RAM disk location matching the first advertisement category;using the acknowledgement to determine whether to replace the first advertisement category with a second ...

Semiconductor Workpiece Temperature Measurement System

An improved system and method of measuring the temperature of a workpiece being processed is disclosed. The temperature measurement system determines a temperature of a workpiece by measuring the amount of expansion in the workpiece due to thermal expansion. The amount of expansion may be measured using a number of different techniques. In certain embodiments, a light source and a light sensor are disposed on opposite sides of the workpiece. The total intensity of the signal received by the light sensor may be indicative of the dimension of the workpiece. In another embodiment, an optical micrometer may be used. In another embodiment, a light sensor may be used in conjunction with a separate device that measures the position of the workpiece. 1. A temperature measurement system , comprising:a carrier to transport a workpiece;light arrays disposed on either side of the carrier;light sensors in alignment with the light arrays, such that the workpiece passes between the light arrays and the light sensors; anda controller, in communication with the light sensors, configured to receive an output from the light sensors while the workpiece is transported by the carrier, and based on the output from the light sensor, to determine a temperature of the workpiece.2. The temperature measurement system of claim 1 , wherein the controller compares the output from the light sensor to a predetermined value to determine a change in a dimension of the workpiece claim 1 , and uses a coefficient of thermal expansion of the workpiece to determine the temperature of the workpiece.3. The temperature measurement system of claim 1 , wherein the controller compares the output from the light sensor to an initial value measured at an initial temperature to determine a change in a dimension of the workpiece claim 1 , and uses a coefficient of thermal expansion of the workpiece to determine the temperature of the workpiece.4. The temperature measurement system of claim 1 , wherein the output ...

Workpiece Processing Technique

Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed. 1. A method of processing a workpiece , comprising:measuring an initial thickness profile of a first workpiece;directing an ion beam toward the first workpiece for a predetermined time or dose;measuring an updated thickness profile of the first workpiece after the directing;determining an etch rate profile of the ion beam as a function of ion beam position based on a difference between the initial thickness profile and the updated thickness profile; andprocessing a second workpiece based on the etch rate profile of the ion beam.2. The method of claim 1 , wherein the processing of the second workpiece is performed using a plurality of passes claim 1 , wherein the ion beam is scanned across the second workpiece during each pass claim 1 , wherein the etch rate profile is used to determine a first set of processing parameters that are selected from the group consisting of a number of passes claim 1 , and operating parameters used during each pass.3. The method of claim 2 , wherein the operating parameters are selected from the group consisting of a scan speed ...

OPTICAL COMPONENT HAVING VARIABLE DEPTH GRATINGS AND METHOD OF FORMATION

An optical grating component may include a substrate, and an optical grating, the optical grating being disposed on the substrate. The optical grating may include a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures are arranged to define a variable depth along a first direction, the first direction being parallel to the plane of the substrate. 2. The optical grating of claim 1 , wherein the plurality of angled structures extend along a second direction claim 1 , perpendicular to the first direction claim 1 , and wherein a grating height of an angled structure along the second direction is uniform.3. The optical grating component of claim 2 ,wherein the optical grating is a first optical grating,the optical grating component further comprising a second optical grating, the second optical grating comprising a second plurality of angled structures, disposed at a second non-zero angle of inclination with respect to the perpendicular to the plane of the substrate, wherein the second plurality of angled structures are arranged to define a second variable depth along the second direction.4. The optical grating component of claim 1 , wherein the optical grating comprises silicon oxide claim 1 , silicon nitride claim 1 , or a glass.5. The optical grating component of claim 1 , wherein the optical grating comprises a grating height in a range of 100 nm to 1000 nm claim 1 , wherein the optical grating comprises a grating height variation of 10%-40%.6. The optical grating component of claim 1 , wherein the optical grating is disposed in a grating layer claim 1 , the optical grating component further comprising an etch stop layer claim 1 , disposed between the substrate and the grating layer.7. The optical grating component of claim 6 , wherein the etch stop layer comprises a thickness of 10 nm to 100 nm.8. The optical grating component of claim 6 , ...

SYSTEM AND METHOD FOR OPTIMALLY FORMING GRATINGS OF DIFFRACTED OPTICAL ELEMENTS

Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an etch stop layer atop a substrate, and providing an optical grating layer atop the etch stop layer. The method may further include providing a patterned mask layer over the optical grating layer, and etching the optical grating layer and the patterned mask layer to form an optical grating in the optical grating layer. The optical grating may include a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the etching forms an area of over-etch in the etch stop layer between the plurality of angled components. 1. A method of forming an optical grating component , comprising:providing an etch stop layer atop a substrate;providing an optical grating layer atop the etch stop layer;providing a patterned mask layer over the optical grating layer; andetching the optical grating layer and the patterned mask layer to form an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, and wherein the etching causes an area of over-etch to be formed in the etch stop layer.2. The method of claim 1 , further comprising removing a healing and a footing along the plurality of angled components.3. The method of claim 1 , wherein an angle of a first sidewall of the plurality of angled components is substantially the same as an angle of a second sidewall of the plurality of angled components.4. The method of claim 3 , wherein the first and second sidewalls are approximately parallel to one another.5. The method of claim 1 , wherein the etching comprises an angled reactive ion etch into the optical grating layer.6. The method of claim 1 , wherein the etching is performed by a ribbon reactive ion beam claim 1 , wherein the ...

SYSTEM AND METHOD FOR OPTIMALLY FORMING GRATINGS OF DIFFRACTED OPTICAL ELEMENTS

Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optically transparent substrate, and forming an optical grating layer on the substrate. The method includes forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. A first sidewall of the optical grating may have a first angle, and a second sidewall of the grating has a second angle different than the first angle. Modifying process parameters, including selectivity and beam angle spread, has an effect of changing a shape or dimension of the plurality of angled components. 1. A method of forming an optical grating component , comprising:providing an optical grating layer atop a substrate;providing a patterned hardmask atop the optical grating layer; andetching the optical grating layer and the hardmask to form an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled components disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, and wherein the etching results in a width of the patterned hardmask being reduced faster than a height to form first and second sidewalls of the optical grating having different angles.2. The method of claim 1 , wherein forming the optical grating comprises etching into the optical grating layer.3. The method of claim 1 , wherein the etching comprises an angled reactive ion etch.4. The method of claim 3 , wherein the angled reactive ion etch is performed by a ribbon reactive ion beam claim 3 , wherein the substrate is scanned along a scan direction with respect to the ribbon reactive ion beam using a processing recipe claim 3 , and wherein the ribbon reactive ion beam has a beam angle mean and a beam spread claim 3 , the beam spread being one of: ...

CLIENT-SIDE WATERMARKING USING HYBRID I-FRAMES

A system and method for client-side watermarking of digital content using hybrid Intra-Frames (I-Frames) are provided. In general, a content source provides a compressed video stream and a hybrid I-Frame stream to a client device via a network. The hybrid I-Frame stream includes a number of low-loss I-Frames corresponding to select ones of the I-Frames in the compressed video stream to be used for client-side watermarking. The client device watermarks the I-Frames in the hybrid I-Frame stream, optionally compresses the watermarked I-Frames, and replaces the select ones of the I-Frames in the compressed video stream with the watermarked and optionally compressed I-Frames to provide a watermarked version of the compressed video stream. 1. A method comprising:receiving a first video content in a compressed format having a first video frame;receiving a second video content separate from the first video content, the second video content having a second video frame corresponding to the first video frame;watermarking the second video frame received from the second video content to produce a watermarked second frame; andreplacing the first video frame from the first video content with the watermarked second video frame, wherein the watermark includes information specific to a user.2. The method as recited in claim 1 , wherein the first video frame has a first compression level and the method further comprises:compressing the watermarked second video frame to the first compression level prior to replacing the first video frame from the first video content with the watermarked second video frame.3. The method as recited in claim 1 , wherein the first video frame is encoded with a lossless algorithm.4. The method as recited in claim 1 , wherein the second video frame is encoded with a lossless algorithm.5. The method as recited in claim 1 , where each of the first video content and the second video content are received in separate unicast sessions.6. The method of claim 1 , ...

Workpiece Processing Technique

Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed. 1. A method of etching a workpiece , comprising: measuring an initial thickness profile of the sacrificial workpiece, the initial thickness profile representing thickness measurements at a plurality of locations, wherein each location represents a two-dimensional position on the sacrificial workpiece;', 'directing a ribbon ion beam toward the sacrificial workpiece for a predetermined time or dose while the ribbon ion beam remains stationary relative to the sacrificial workpiece;', 'measuring an updated thickness profile of the sacrificial workpiece after the directing, the updated thickness profile representing thickness measurements at the plurality of locations; and', 'determining an etch rate profile of the ribbon ion beam as a function of ion beam position, wherein the etch rate profile of the ribbon ion beam is non-uniform and is calculated as a difference between the initial thickness profile and the updated thickness profile at each of the two-dimensional positions; and, 'determining an etch rate profile of a ribbon ion beam as a function of ion beam ...

Techniques and Structure for Forming Thin Silicon-on-Insulator Materials

A method may include providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising an insulator layer and a silicon layer. The silicon layer may be disposed on the insulator layer, where the silicon layer comprises a first silicon thickness variation. The method may include forming an oxide layer on the silicon layer, where the oxide layer has a uniform thickness. The method may include selectively etching the oxide layer on the silicon layer, wherein the oxide layer comprises a first non-uniform oxide thickness. After thermal processing of the SOI substrate in an oxygen ambient, the non-uniform oxide thickness may be configured to generate a second silicon thickness variation in the silicon layer, less than the first silicon thickness variation. 1. A method , comprising: an insulator layer: and', 'a silicon layer, the silicon layer disposed on the insulator layer, the silicon layer comprising a first silicon thickness variation;, 'providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprisingforming an oxide layer on the silicon layer, the oxide layer having a uniform thickness; andselectively etching the oxide layer on the silicon layer, wherein the oxide layer comprises a non-uniform oxide thickness, whereinafter thermal processing of the SOI substrate in an oxygen ambient, the non-uniform oxide thickness is configured to generate a second silicon thickness variation in the silicon layer, less than the first silicon thickness variation.2. The method of claim 1 , wherein a first thickness of the oxide layer is removed at a first position of the substrate claim 1 , wherein a second thickness of the oxide layer is removed at a second position of the substrate claim 1 , the second thickness being greater than the first thickness claim 1 , wherein claim 1 , before the selectively forming the oxide layer claim 1 , the silicon layer comprises a first silicon thickness at the first position claim 1 , wherein the silicon layer comprises a ...

DEVICE STRUCTURE AND TECHNIQUES FOR FORMING SEMICONDUCTOR DEVICE HAVING ANGLED CONDUCTORS

A method of forming a device may include forming a component in a first level of a device structure; forming a contact cavity overlapping the component, the contact cavity forming a non-zero angle of inclination with respect to a perpendicular to a substrate plane. The method may further include filling the contact cavity with a conductor, wherein an angled conductor is formed, wherein the angled conductor extends to a second level of the device structure. 1. A method of forming a device , comprising:forming a component in a first level of a device structure;forming a contact cavity overlapping the component, the contact cavity forming a non-zero angle of inclination with respect to a perpendicular to a substrate plane; andfilling the contact cavity with a conductor, wherein an angled conductor is formed, wherein the angled conductor extends to a second level of the device structure.2. The method of claim 1 , wherein the angled conductor has a first end and a second end claim 1 , wherein the first end is shifted from the second end within the substrate plane.3. The method of claim 2 , wherein the first end does not overlap with the second end.4. The method of claim 1 , wherein the forming the contact cavity comprises:providing a plurality of layers above the component, the plurality of layers forming the second level, and a third level, disposed between the first level and the second level;forming a mask on at least one layer of the plurality of layers; anddirecting angled ions to the mask in a first ion exposure, wherein the angled ions selectively etch the at least one layer with respect to the mask.5. The method of claim 4 , wherein the first ion exposure comprises:providing the substrate in a process chamber, adjacent a plasma chamber;extracting an ion beam from the plasma chamber into the process chamber through an extraction aperture, wherein the ion beam defining a non-zero angle of incidence with respect to the substrate plane; andperforming at least one ...

MODULATION OF ROLLING K VECTORS OF ANGLED GRATINGS

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material. 1. A device , comprising: 'a slant angle relative to the surface of the substrate, wherein the slant angle of the optical device fins of adjacent portions increases or decreases with a rolling k-vector across the surface of the substrate.', 'at least two portions, the optical device fins of each portion having, 'one or more regions, each of the regions having a plurality of optical device fins disposed on a substrate, the plurality of optical device fins of at least one region of the one or more regions comprising2. The device of claim 1 , wherein the one or more regions include at least one of an input coupling region claim 1 , an intermediate coupling region claim 1 , or an output coupling region.3. The device of claim 2 , wherein one of the optical device fins of the input coupling region has a different slant angle than one of the optical device fins of the intermediate coupling region.4. The device of claim 2 , wherein one of the optical device fins of the input coupling region has a different slant angle than one of the optical device fins of the output coupling region.5. The device of claim 2 , wherein one of the optical device fins of the intermediate coupling region has a different slant angle than one of the optical device fins of the output coupling region.6. The device of claim 2 , wherein one of the optical device fins of the input coupling region has the same ...

APPARATUS AND TECHNIQUES FOR ANGLED ETCHING USING MULTIELECTRODE EXTRACTION SOURCE

A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane. 1. A method of patterning a substrate , comprising:providing the substrate, wherein a main surface of the substrate defines a substrate plane, wherein the substrate comprises a grating layer and a base layer, subjacent the grating layer;generating a plasma in a plasma chamber, adjacent to the substrate; andapplying an extraction voltage to an extraction assembly, adjacent the plasma chamber, the extraction assembly comprising at least two electrodes, wherein a first electrode is disposed immediately adjacent a side of the plasma chamber, the side of the plasma chamber defining a first plane, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the at least two electrodes define an angled extraction tunnel, disposed at a non-zero angle of inclination with respect to a perpendicular to the substrate plane,wherein an angled ion beam is extracted from the extraction assembly, the angled ion beam defining a non-zero angle of incidence with respect to the substrate plane,wherein the angled ion beam etches the ...

THREE-DIMENSIONAL ULTRASONIC WAVE VELOCITY TEST SYSTEM

A system for and a method of measuring ultrasonic wave velocities in a subterranean core specimen is provided. Ultrasonic wave velocities are measured from the side surfaces (faces) of a polygonal-shaped core specimen having at least ten sides or faces. Stress is introduced to the core specimen by hydraulic rams associated with each set of opposing sides. As stress is applied, ultrasonic waves are introduced to at least one side of the set of opposing sides and the wave transmitted through the core specimen is measured. Subsequently, the wave velocity for the ultrasonic wave can be calculated based on the measurements taken. Also, elastic properties associated with the core specimen can be calculated. 1. A method of measuring ultrasonic wave velocities in a subterranean core specimen having a bedding plane direction , the method comprising:introducing the core specimen into a testing system, wherein the core specimen is a polygonal-shaped specimen having at least ten faces such that each face has an associated opposing face to form at least five sets of opposing faces, and the testing system comprises a transducer associated with each face of the polygonal-shaped specimen;applying stress to each face of the polygonal-shaped specimen wherein the stress is applied by a plurality of rams with each ram being associated with one of the faces of each set of opposing faces such that the same or different stress can be applied to each set of opposing faces;monitoring the stress applied to each face;introducing an ultrasonic wave to at least one face of the polygonal-shaped specimen;detecting the ultrasonic wave on the associated opposing face; andcalculating wave velocity for the ultrasonic wave based on the detecting of the ultrasonic wave.2. The method of claim 1 , further comprising cutting the core specimen into the polygonal-shaped specimen claim 1 , wherein two faces run perpendicular to the bedding plane direction and the other faces run parallel to the bedding plane ...

GATE DEVICES AND METHODS OF FORMATION USING ANGLED IONS

The present disclosure is directed to structures and processing for three-dimensional transistor devices. In some approaches, a method may include providing a plurality of fin structures formed from a substrate, the plurality of fin structures disposed subjacent to a hard mask layer, and directing angled ions at the plurality of fin structures. The angled ions may form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the angled ions etch the plurality of fin structures to form a stack of isolated nanowires within the plurality of fin structures. The method may further include removing the hard mask layer, and forming a stopping layer over the stack of isolated nanowires. 1. A method of forming a three-dimensional transistor device , comprising:providing a plurality of fin structures formed from a substrate, the plurality of fin structures disposed subjacent to a hard mask layer;directing angled ions at the plurality of fin structures, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, and wherein the angled ions etch the plurality of fin structures to form a stack of isolated nanowires within the plurality of fin structures;removing the hard mask layer; andforming a stopping layer over the stack of isolated nanowires.2. The method of claim 1 , further comprising:providing a source trench isolation (STI) material over the plurality of fin structures;forming a set of trenches through the plurality of fin structures and the STI material; anddepositing a dielectric material into the set of trenches.3. The method of claim 2 , further comprising:forming a gate stack over the stack of isolated nanowires;removing the gate stack selective to the stopping layer formed over the stack of isolated nanowires;forming a spacer over the stack of isolated nanowires and the gate stack; andremoving the spacer and the stack of isolated nanowires adjacent the gate stack. ...

High-Speed WAN to Wireless LAN Gateway

A gateway interconnecting a high speed Wide Area Network (WAN) and a lower speed Wireless Local Area Network (WLAN) is provided. The high speed WAN is preferably connected to the gateway via a Fiber-to-the Home (FTTH) connection and associated FTTH modem. In general, the gateway includes an adaptable cross-layer offload engine operating to manage bandwidth between the high speed WAN and the lower speed WLAN. As data enters the gateway from the WAN at the high speed data rate of the WAN, the offload engine stores the data in a non-secure data cache. A rule check engine performs a stateless or stateful inspection of the data in the non-secure data cache. Thereafter, the data is moved from the non-secure data cache to a secure data cache and thereafter transmitted to an appropriate user device in the WLAN at the lower data rate of the WLAN. 1. A residential gateway within a customer premises interconnecting a Wide Area Network (WAN) external to the customer premises to a lower speed Wireless Local Area Network (WLAN) within the customer premises , the residential gateway comprising:an adaptable cross-layer offload engine;a data cache associated with the offload engine;a network interface communicatively coupling the offload engine to the WAN and providing a first data rate; anda wireless interface associated with the offload engine and adapted to communicate with a plurality of user devices within the WLAN, the interface providing a second data rate that is less than the first data rate of the network interface; receive incoming data from the WAN via the network interface at the first data rate;', 'store the incoming data in the data cache; and', 'transmit the incoming data from the data cache to a corresponding one of the plurality of user devices in the WLAN via the wireless interface at the second data rate;, 'wherein the offload engine is adapted tofurther wherein the gateway further comprises:a rule check engine adapted to inspect the incoming data from the WAN ...

INTERACTING WITH HIERARCHICAL CLUSTERS OF VIDEO SEGMENTS USING A METADATA SEARCH

Embodiments are directed to techniques for interacting with a hierarchical video segmentation by performing a metadata search. Generally, various types of metadata can be extracted from a video, such as a transcript of audio, keywords from the transcript, content or action tags visually extracted from video frames, and log event tags extracted from an associated temporal log. The extracted metadata is segmented into metadata segments and associated with corresponding video segments defined by a hierarchical video segmentation. As such, a metadata search can be performed to identify matching metadata segments and corresponding matching video segments defined by a particular level of the hierarchical segmentation. Matching metadata segments are emphasized in a composite list of the extracted metadata, and matching video segments are emphasized on the video timeline. Navigating to a different level of the hierarchy transforms the search results into corresponding coarser or finer segments defined by the level. 1. One or more computer storage media storing computer-useable instructions that , when used by one or more computing devices , cause the one or more computing devices to perform operations comprising:accessing a hierarchical segmentation of a video timeline of a video, the hierarchical segmentation associating extracted metadata about the video with corresponding video segments defined by a first level of the hierarchical segmentation;receiving an input identifying a search criterion;executing a search of the extracted metadata using the search criterion to identify matching metadata segments of the extracted metadata and corresponding matching video segments of video segments defined by the first level of the hierarchical segmentation; andemphasizing on the video timeline the corresponding matching video segments from the first level.2. The one or more computer storage media of claim 1 , wherein emphasizing the matching video segments comprises animating the ...

INTRAVASCULAR OXYGENATION SYSTEM AND METHOD

A system for intravascular oxygenation may include a catheter shaft, a vibratory member, and an oxygen source. The catheter shaft may have a wall that extends from a proximal end to a distal end along a longitudinal axis to form a lumen. The distal end may terminate in an atraumatic tip that seals off an interior space of the lumen from an adjacent exterior space. The distal end may include a coiled spring whose coils are tightly disposed against adjacent coils. The vibratory member may be configured to produce and transmit via the wall, to the coiled spring, mechanical vibration or high-frequency acoustic energy. The oxygen source may be configured to be coupled to the proximal end and to deliver a flow of oxygen to an interior space for communication to the exterior space, through gaps that exist or are created between adjacent coils of the coiled spring. 1. A system for intravascular oxygenation , the system comprising:a catheter shaft having a wall that extends from a proximal end to a distal end along a longitudinal axis to form a lumen, the distal end terminating in an atraumatic tip that seals off an interior space of the lumen from an adjacent exterior space; wherein the wall comprises a semi-porous membrane having a plurality of pores in the range of 5 nanometers and 10 micrometers;a vibratory member configured to produce and transmit to the wall mechanical vibration or high-frequency acoustic energy;an oxygen source configured to be coupled to the proximal end and deliver a flow of oxygen to an interior space for communication to the exterior space, through the plurality of pores; anda check valve disposed between the oxygen source and the interior space and configured to stop the flow of oxygen to an interior space if a flow rate exceeds a first threshold or if a pressure falls below a second threshold.2. The system of claim 1 , wherein the wall comprises a plurality of folds that are parallel to the longitudinal axis and configured to increase a surface ...

METHOD AND DEVICE FOR A CARRIER PROXIMITY MASK

A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate. 1. A carrier proximity mask , comprising:a first carrier body, the first carrier body having one or more openings, the one or more openings formed as proximity masks to form structures on a first side of a substrate, the first carrier body having one or more contact areas, the contact areas to align with one or more contact areas on the first side of the substrate;a second carrier body having one or more contact areas, the contact areas to align with one or more contact areas on a second side of the substrate; anda set of one or more clamps to clamp the first carrier body with the second carrier body;the one or more contact areas of the first carrier body and the one or more contact areas of the second carrier body to contact opposite sides of the substrate to suspend a work area of the first side of the substrate and a work area of the second side of the substrate between the first carrier body and the second carrier body.2. The carrier proximity mask of claim 1 , wherein the one or more contact areas of the first carrier body comprise contact areas to align with exclusion areas of the first side of the substrate and the one or more contact areas of the second carrier body comprise contact areas to align with ...

METHOD AND DEVICE FOR A CARRIER PROXIMITY MASK

A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate. 1. A method of forming a variable etch depth profile in a substrate , comprisingproviding a substrate;providing a carrier, the carrier comprising a first carrier body coupled with a second carrier body, the substrate coupled between the first carrier body and the second carrier body, the first carrier body having one or more openings to expose work areas of the substrate, the one or more openings having edges;convolving a first edge of the edges in a first opening with a beam from a processing tool to create a convolved beam, the convolved beam to etch a work area of the substrate exposed by the first opening to create a variable etch depth profile in the substrate proximate to the first edge; andincreasing a current density of the beam as the beam transitions from a masked area of the substrate to an edge of the first carrier body.2. (canceled)3. The method of claim 1 , further comprising decreasing a current density of the beam as the beam transitions from an edge of the first carrier body into an opening of the first carrier body.4. The method of claim 1 , wherein increasing the current density comprises increasing a duty cycle of the beam claim 1 , reducing a scan rate of the beam claim 1 , or a combination ...

ION IMPLANTATION FOR SUPERCONDUCTOR TAPE FABRICATION

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species. 1. A method of processing a superconductor tape , comprising:providing the superconductor tape as a free standing tape comprising a superconductor layer and a metal layer;directing ions into an implant zone along a first direction; anddrawing the superconductor tape through the implant zone along a draw axis perpendicular to the first direction wherein the metal layer is exposed to the ions.2. The method of claim 1 , further comprising drawing the superconductor tape between a first reel in a first vacuum chamber and second reel in a second vacuum chamber during the implanting.3. The method of claim 1 , wherein the directing the ions comprises directing an ion beam into the implant zone of a beamline claim 1 , wherein the ion beam has a beam height along a second direction perpendicular to the first direction that is greater than a width of the superconductor tape along the second direction.4. The method of claim 1 , further comprising:measuring ion dose rate of the ions proximate the superconductor tape; andadjusting velocity of the drawing according to the measured dose rate.5. The method of claim 1 , wherein the drawing the comprises drawing the superconductor tape back and forth between the first and second reel during the implanting.6. The method of claim 1 , further comprising cooling the superconductor tape during the drawing by drawing the tape over cooling rollers.7. The method of claim 1 , further comprising:performing a resistivity measurement of the superconductor tape during the implanting; andadjusting tape velocity based on the resistivity measurement.8. The method of claim 1 , further comprising claim 1 , during the implanting ...

Workpiece Processing Method And Apparatus

A system and method for processing a workpiece is disclosed. A plasma chamber is used to create a ribbon ion beam, extracted through an extraction aperture. A workpiece is translated proximate the extraction aperture so as to expose different portions of the workpiece to the ribbon ion beam. As the workpiece is being exposed to the ribbon ion beam, at least one parameter associated with the plasma chamber is varied. The variable parameters include extraction voltage duty cycle, workpiece scan velocity and the shape of the ion beam. In some embodiments, after the entire workpiece has been exposed to the ribbon ion beam, the workpiece is rotated and exposed to the ribbon ion beam again, while the parameters are varied. This sequence may be repeated a plurality of times. 1. A method of processing a workpiece using a plasma chamber , comprising:extracting a ribbon ion beam through an extraction aperture of the plasma chamber;translating the workpiece relative to the plasma chamber so that different portions of the workpiece are exposed to the ribbon ion beam; andvarying at least one parameter of the plasma chamber while the workpiece is being translated.2. The method of claim 1 , further comprising:rotating the workpiece after at least some portions of the workpiece have been exposed to the ribbon ion beam; andrepeating the translating, varying and rotating a plurality of times to achieve a desired pattern.3. The method of claim 1 , wherein an extraction voltage is applied to walls of the plasma chamber; and the at least one parameter comprises a duty cycle of the extraction voltage.4. The method of claim 1 , wherein the at least one parameter comprises a shape of the ribbon ion beam claim 1 , and wherein the shape of the ribbon ion beam is varied by mechanical blockers claim 1 , electromagnets or electrodes.5. The method of claim 1 , wherein the at least one parameter comprises an angle of incidence of the ribbon ion beam.6. The method of claim 1 , wherein the at least ...

METHODS OF PRODUCING SLANTED GRATINGS WITH VARIABLE ETCH DEPTHS

Methods of producing gratings with trenches having variable height are provided. In one example, a method of forming a diffracted optical element may include providing an optical grating layer over a substrate, patterning a hardmask over the optical grating layer, and forming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from a top surface of the optical grating layer. The method may further include etching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches. 1. A method of forming a diffracted optical element , comprising:providing an optical grating layer; andetching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of angled trenches, and wherein the etching comprises performing an angled ion etch at a non-zero angle with respect to a perpendicular to a plane defined by a top surface of the optical grating layer.2. The method of claim 1 , further comprising:providing the optical grating layer over a substrate;patterning a hardmask over the optical grating layer; andforming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from the top surface of the optical grating layer.3. The method of claim 2 , wherein forming the sacrificial layer comprises:depositing the sacrificial layer atop the hardmask; andetching the sacrificial layer to create a trench with a sloped bottom surface.4. The method of claim 3 , further comprising performing a vertical etch to form the trench.5. The method of claim 3 , further comprising:etching the optical grating layer to recess the trench into the optical grating layer;forming a ...

TECHNIQUES FOR PROCESSING A POLYCRYSTALLINE LAYER USING AN ANGLED ION BEAM

A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position. 1. A method of processing a layer , comprising:providing the layer on a substrate, the substrate defining a substrate plane;directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane;performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; anddirecting the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position.2. The method of claim 1 , wherein the ion exposure and the rotation comprise an exposure cycle claim 1 , wherein the method comprises N exposure cycles claim 1 , wherein the substrate is rotated between N different rotational positions claim 1 , wherein N is at least 4.3. The method of ...

TECHNIQUES FOR FORMING ANGLED STRUCTURES

A method of forming angled structures in a substrate. The method may include the operation of forming a mask by etching angled mask features in a mask layer, disposed on a substrate base of the substrate, the angled mask features having sidewalls, oriented at a non-zero angle of inclination with respect to perpendicular to a main surface of the substrate. The method may include etching the substrate with the mask in place, the etching comprising directing ions having trajectories arranged at a non-zero angle of incidence with respect to a perpendicular to the main surface. 1. A method of forming angled structures in a substrate , comprising:forming a mask by etching angled mask features in a mask layer, disposed on a substrate base of the substrate, the angled mask features having sidewalls, oriented at a non-zero angle of inclination with respect to perpendicular to a main surface of the substrate; andetching the substrate with the mask in place, the etching comprising directing ions having trajectories arranged at a non-zero angle of incidence with respect to a perpendicular to the main surface.2. The method of claim 1 ,wherein the angled mask features in the mask layer define a first spacing, between adjacent features of the angled mask features, and wherein the angled structures define a width of a trench, between adjacent structures of the angled structures, the width being equal to the first spacing.3. The method of claim 1 , wherein the non-zero angle of incidence is parallel to the non-zero angle of inclination claim 1 , wherein the angled structures comprise angled sidewalls claim 1 , parallel to a set of sidewalls of the angled mask features of the mask layer.4. The method of claim 1 , wherein the etching the substrate comprises directing reactive angled ions in a reactive ion etch to the substrate claim 1 , wherein the substrate is selectively etched with respect to the mask layer.5. The method of claim 1 , wherein the etching the substrate comprises ...

OPTICAL COMPONENT HAVING DEPTH MODULATED ANGLED GRATINGS AND METHOD OF FORMATION

A method of forming an optical grating component. The method may include providing a substrate, the substrate comprising an underlayer and a hard mask layer, disposed on the underlayer. The method may include patterning the hard mask layer to define a grating field and etching the underlayer within the grating field to define a variable height of the underlayer along a first direction, the first direction being parallel to a plane of the substrate. The method may include forming an optical grating within the grating field using an angled ion etch, the optical grating comprising a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures define a variable depth along the first direction, based upon the variable height of the underlayer. 1. A method of forming an optical grating component , comprising:providing a substrate, the substrate comprising an underlayer and a hard mask layer, disposed on the underlayer;patterning the hard mask layer to define a grating field;etching the underlayer within the grating field to define a variable height of the underlayer along a first direction, the first direction being parallel to a plane of the substrate; andforming an optical grating within the grating field using an angled ion etch, the optical grating comprising a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures define a variable depth along the first direction, based upon the variable height of the underlayer.2. The method of claim 1 ,wherein the patterning the hard mask layer comprises:etching an opening in the hardmask layer, the opening defining a border of the grating field.3. The method of claim 1 , wherein the etching the underlayer comprises:directing a ribbon ion beam to the underlayer, wherein the substrate is ...

Formation of angled gratings

Systems and methods discussed herein can be used to form gratings at various slant angles across a grating material on a single substrate by determining an ion beam angle and changing the angle of an ion beam among and between ion beam angles to form gratings with varying angles and cross-sectional geometries. The substrate can be rotated around a central axis, and one or more process parameters, such as a duty cycle of the ion beam, can be modulated to form a grating with a depth gradient.

MALWARE DETECTION IN DISTRIBUTED COMPUTER SYSTEMS

Methods and systems of malware detection in distributed computer systems. An example method includes: receiving, by a network router, a network packet originated by a client computer; matching the network packet to a default route; forwarding the network packet to a command and control server simulator; and forwarding, to the client computer system, one or more response packets comprising a command and control instruction issued to the client computer system by the command and control server simulator. 1. A method , comprising:receiving, by a network router, a network packet originated by a client computer;responsive to failing to match the network packet to a plurality of predetermined routes identified by respective destination addresses, forwarding the network packet to a command and control server simulator; andforwarding, to the client computer system, one or more response packets comprising a command and control instruction issued to the client computer system by the command and control server simulator; andresponsive to receiving a notification from the command and control server simulator, creating a routing rule causing the network router to discard subsequent network packets addressed to a destination address of the network packet.2. The method of claim 1 , wherein a route of the plurality of predetermined routes identifies a proxy server.3. The method of claim 1 , wherein a route of the plurality of predetermined routes identifies an intrusion prevention and detection system.4. The method of claim 1 , wherein the network router is provided by an Open Systems Interconnection (OSI) layer 3 (network layer) router.5. The method of claim 1 , wherein the network packet is initiated by a malware agent running on the client computer.6. The method of claim 1 , further comprising:forwarding the network packet originated by the client computer system to a traffic analyzer for detecting malware activity.7. The method of claim 6 , further comprising:responsive to ...

ION IMPLANTATION FOR SUPERCONDUCTOR TAPE FABRICATION

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species. 1. A method of forming a superconductor tape , comprising:depositing a superconductor layer on a substrate;forming a metal layer comprising a first metal on a surface of the superconductor layer; andimplanting an alloy species into the metal layer, wherein the first metal forms a metal alloy after the implanting of the alloy species.2. The method of claim 1 , further comprising providing the metal layer and superconductor layer as a patterned stack that defines a first pattern on the substrate.3. The method of claim 1 , wherein the substrate comprises a metal tape claim 1 , the method further comprising continuously drawing the metal tape through an implant zone containing ions of the alloy species during the implanting.4. The method of claim 1 , wherein the substrate comprises a substrate base and an intermediate layer that comprises a material having a preferred crystallographic orientation.5. The method of claim 1 , further comprising annealing the metal layer after the implanting.6. The method of claim 1 , wherein the metal layer is silver.7. The method of wherein the metal layer is a shunt metal layer claim 1 , the method further comprising depositing a protection metal layer on the shunt metal layer after the implanting.8. The method of claim 1 , wherein the alloy species forms a mole fraction of 0.1% to 30% with respect to the metal.9. The method of claim 6 , wherein the alloy species comprises at least one of Zn claim 6 , Sn claim 6 , Zr claim 6 , Ta claim 6 , As claim 6 , Ge claim 6 , C claim 6 , B claim 6 , N claim 6 , or P.10. The method of claim 1 , wherein the implanting the alloy species comprises:performing a first implant under a ...

FORMATION OF ANGLED GRATINGS

Systems and methods discussed herein can be used to form gratings at various slant angles across a grating material on a single substrate by determining an ion beam angle and changing the angle of an ion beam among and between ion beam angles to form gratings with varying angles and cross-sectional geometries. The substrate can be rotated around a central axis, and one or more process parameters, such as a duty cycle of the ion beam, can be modulated to form a grating with a depth gradient. 1. An optical device , comprising: a first grating in the grating material layer, wherein the first grating comprises a first plurality of fins having a first slant angle, a first shape vector, and a first grating vector, wherein a direction of the first shape vector is in the direction from a first side of the first grating to a second side of the first grating, wherein the second side is opposite the first side and a first transitional surface extends between the first side and the second side; and', 'a second grating in the grating material layer, wherein the second grating comprises a second plurality of fins having a second slant angle, second shape vector and a second grating vector, wherein a direction of the second shape vector is in the direction from a first side of the first grating to a second side of the second grating, wherein the second side is opposite the first side and a second transitional surface extends between the first side and the second side, and wherein the second slant angle is different than the first slant angle and the second grating vector is different that the first grating vector., 'a grating material layer, comprising2. The optical device of claim 1 , wherein the second shape vector is different than the first shape vector claim 1 , and wherein the second transitional surface is different from the first transitional surface.3. The optical device of claim 1 , wherein the material layer is composed of at least one of silicon oxycarbide claim 1 , ...

SYSTEM AND METHOD FOR DETECTING ETCH DEPTH OF ANGLED SURFACE RELIEF GRATINGS

Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optical grating layer, and forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. The method may further include delivering light from a light source into the optical grating layer, and measuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer. 1. A method of forming an optical grating component , comprising:providing an optical grating layer;forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches;delivering light from a light source into the optical grating layer; andmeasuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer.2. The method of claim 1 , further comprising:comparing a predetermined light value to a detected light value of at least one of: the undiffracted portion of the light and the diffracted portion of the light, wherein the predetermined light value corresponds to a known angled trench depth; anddetermining a depth of the plurality of angled trenches based on the comparison of the detected light value to the predetermined light value, wherein the detected light value is a light intensity.3. The method of claim 2 , further comprising:forming a test optical grating in the optical grating layer, wherein the optical grating comprises a second plurality of angled trenches; andmeasuring at least one of: an undiffracted portion of the light passing by the test optical grating, and a diffracted portion of the light exiting the optical grating layer after engagement ...

Semiconductor Workpiece Temperature Measurement System

An improved system and method of measuring the temperature of a workpiece being processed is disclosed. The temperature measurement system determines a temperature of a workpiece by measuring the amount of expansion in the workpiece due to thermal expansion. The amount of expansion may be measured using a number of different techniques. In certain embodiments, a light source and a light sensor are disposed on opposite sides of the workpiece. The total intensity of the signal received by the light sensor may be indicative of the dimension of the workpiece. In another embodiment, an optical micrometer may be used. In another embodiment, a light sensor may be used in conjunction with a separate device that measures the position of the workpiece.

SPUTTER ETCH MATERIAL SELECTIVITY

A method of etching a workpiece comprising two or more materials is disclosed. The method involves using physical sputtering as the etching method where the processing parameters of the sputtering process are tuned to achieve a desired etch rate selectivity. The method includes determining the etch rate of each material disposed on the workpiece as a function of various processing parameters, such as ion species, ion energy, incidence angle and temperature. Once the relationship between etch rate and these parameters is determined for each material, a set of values for these processing parameters may be chosen to achieve the desired etch rate selectivity. 1. A method of selectively etching a workpiece having two materials using a sputtering process , comprising:determining a first etch rate of a first material as a function of at least one processing parameter, wherein the at least one processing parameter is selected from the group consisting of ion species, ion energy, incidence angle and temperature;determining a second etch rate of a second material as a function of the at least one processing parameter;calculating etch rate selectivity of the first material to the second material based on the first etch rate and the second etch rate;selecting values of the at least one processing parameter such that the etch rate selectivity matches a desired etch rate selectivity; andphysically sputtering the workpiece using the values of the at least one processing parameter, wherein the physical sputtering process is performed using an inert gas and removal of the first material and the second material is achieved exclusively by physical interaction between the inert gas and the workpiece.2. The method of claim 1 , wherein the first etch rate and the second etch rate are determined as a function of at least two processing parameters.3. The method of claim 2 , wherein the two processing parameters comprises ion energy and incidence angle.4. The method of claim 1 , wherein the ...

SYSTEM AND METHOD FOR FORMING DIFFRACTED OPTICAL ELEMENT HAVING VARIED GRATINGS

Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates. 1. A system for generating angled gratings , the system comprising:a plasma source delivering an angled ion beam to a workpiece;a plurality of substrates coupled to the workpiece, each of the plurality of substrates including a first angled grating and a second angled grating; anda plurality of proximity masks positionable between the plasma source and the workpiece, wherein a first proximity mask of the plurality of proximity masks includes a first set of openings permitting the angled ion beam to pass therethrough to form the first angled grating of each of the plurality of substrates, and wherein a second proximity mask of the plurality of proximity masks includes a second set of openings permitting the angled ion beam to pass therethrough to form the second angled grating of each of the plurality of substrates.2. The system of claim 1 , wherein each of the plurality of substrates further includes a third angled grating claim 1 , and wherein a third proximity mask of the plurality of proximity masks includes a third set of openings permitting the angled ion beam to pass therethrough to form the ...

METHOD AND DEVICE FOR A CARRIER PROXIMITY MASK

A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate. 1. A method of forming a variable etch depth profile in a substrate , comprisingproviding a substrate;providing a carrier, the carrier comprising a first carrier body coupled with a second carrier body, the substrate coupled between the first carrier body and the second carrier body, the first carrier body having one or more openings to expose work areas of the substrate, the one or more openings having edges;convolving a first edge of the edges in a first opening with a beam from a processing tool to create a convolved beam, the convolved beam to etch a work area of the substrate exposed by the first opening to create a variable etch depth profile in the substrate proximate to the first edge; anddecreasing a current density of the beam as the beam transitions from an edge of the first carrier body into an opening of the first carrier body.2. The method of claim 1 , further comprising increasing a current density of the beam as the beam transitions from a masked area of the substrate to an edge of the first carrier body.3. The method of claim 2 , wherein increasing the current density comprises increasing a duty cycle of the beam claim 2 , reducing a scan rate of the beam claim 2 , or a combination thereof.4. ...

Device structure for forming semiconductor device having angled contacts

A memory device may include an active device region, disposed at least partially in a first level. The memory device may include a storage capacitor, disposed at least partially in a second level, above the first level, wherein the first level and the second level are parallel to a substrate plane. The memory device may also include a contact via, the contact via extending between the storage capacitor and the active device region, and defining a non-zero angle of inclination with respect to a perpendicular to the substrate plane.

APPARATUS AND TECHNIQUES FOR ANGLED ETCHING USING MULTIELECTRODE EXTRACTION SOURCE

A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane. 1. A plasma source , comprising:a plasma chamber, the plasma chamber comprising a first side, defining a first plane; andan extraction assembly, disposed adjacent to the first side of the plasma chamber, the extraction assembly comprising at least two electrodes,wherein a first electrode is disposed immediately adjacent the side of the plasma chamber,wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane,wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture,wherein the first aperture defines a lateral displacement from the second aperture along a second direction, parallel to the first plane,wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.2. The plasma source of claim 1 , the extraction assembly comprising three electrodes claim 1 ,wherein a third electrode defines a second vertical displacement from the second electrode along the first direction,wherein ...

GATE ALL AROUND DEVICE AND METHOD OF FORMATION USING ANGLED IONS

A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure. 1. A semiconductor device , comprising:a substrate; and 'a plurality of nanowire stacks, arranged adjacent to one another along a first direction, wherein a given nanowire stack of the plurality of nanowire stacks comprises at least two nanowires, disposed in a vertical array along a second direction, perpendicular to the first direction, wherein the at least two nanowires extend along a third direction, perpendicular to the second direction and the first direction, and wherein the at least two nanowires comprise a polygonal cross-section.', 'a nanowire assembly, disposed over the substrate, the nanowire assembly further comprising2. The semiconductor device of claim 1 , wherein the polygonal cross-section comprises a hexagonal cross-section.3. The semiconductor device of claim 1 , wherein the at least two nanowires comprises three nanowires.4. The semiconductor device of claim 1 , wherein the plurality of nanowire stacks comprises a pitch of 50 nm or less along the first direction.5. The semiconductor device of claim 1 , comprising a CMOS device.6. A horizontal gate-all-around (HGAA) device claim 1 , comprising:a substrate; and a plurality of nanowire stacks, arranged adjacent to one another along a first direction,', 'wherein a given nanowire stack of the plurality of nanowire stacks comprises at least two nanowires, disposed in a vertical array along a second direction, perpendicular to the first ...

TECHNIQUES FOR FORMING ISOLATION STRUCTURES IN A SUBSTRATE

A method may include performing a chemical mechanical polishing (CMP) etch of a fin assembly disposed on a substrate, the fin assembly comprising a plurality of fin structures coated with an oxide layer, wherein as a result of the CMP etch, a first portion of the oxide layer is removed, and the fin structures remain covered with oxide. The method may further include performing a selective area processing (SAP) etch using ions, wherein a second portion of the oxide layer is removed in a non-uniform manner, wherein after the SAP etch, the fin structures remain covered with oxide. 1. A method , comprising:performing a chemical mechanical polishing (CMP) etch of a fin assembly disposed on a substrate, the fin assembly comprising a plurality of fin structures coated with an oxide layer,wherein as a result of the CMP etch, a first portion of the oxide layer is removed, and the fin structures remain covered with oxide; andperforming a selective area processing (SAP) etch using an ion beam during a scan of the substrate, wherein a second portion of the oxide layer is removed in a non-uniform manner by varying a scan speed or by varying an ion current of the ion beam as a function of time during the scan, wherein after the SAP etch, the fin structures remain covered with oxide.2. The method of claim 1 , the plurality of fin structures comprising a nitride layer and a semiconductor layer.3. The method of claim 2 , further comprising:performing a first oxide etch, wherein a third portion of the oxide layer is removed, wherein the nitride layer of the plurality of fin structures is exposed;performing a selective nitride etch, wherein the nitride layer is removed; andperforming a second oxide etch, wherein an upper portion of the semiconductor layer of the plurality of fin structures is exposed.5. The method of claim 1 , wherein the performing the SAP etch comprises:directing the ion beam as a ribbon ion beam along a first ion trajectory to an upper surface of the oxide layer in ...

CRITICAL DIMENSIONS VARIANCE COMPENSATION

An apparatus of a wafer processing apparatus includes at least one memory and logic, at least a portion of which is implemented in circuitry of the wafer processing apparatus including at least one processor coupled to the at least one memory. The logic may provide a 3D model of a surface of a wafer, the wafer defining a wafer plane; and modify a surface feature in a Z-direction along the surface of the wafer based on at least one of: an X-critical dimension (CD) extending along an X-direction of the wafer plane, and a Y-CD extending along a Y direction of the wafer plane. 1. An apparatus of a wafer processing apparatus , comprising:at least one memory; and provide a 3D model of a surface of a wafer, the wafer defining a wafer plane; and', 'modify a surface feature in a Z-direction along the surface of the wafer based on at least one of: an X-critical dimension (CD), extending along an X-direction of the wafer plane, and a Y-CD extending along a Y direction of the wafer plane., 'logic, at least a portion of which is implemented in circuitry of the wafer processing apparatus comprising at least one processor coupled to the at least one memory, the logic to2. The apparatus of the wafer processing apparatus according to claim 1 , wherein the logic is to provide the 3D model of the surface associated of the wafer using scatterometry or ellipsometry.3. The apparatus of the wafer processing apparatus according to claim 1 , wherein the logic is to modify the surface feature in the Z direction by etching material from the surface feature or by adding material to the surface feature by deposition.4. The apparatus of the wafer processing apparatus according to claim 1 , wherein the X-CD and the Y-CD are associated with one or more capacitors defined in the wafer.5. The apparatus of the wafer processing apparatus according to claim 1 , wherein the X-CD and the Y-CD are associated with one or more transistors defined in the wafer.6. The apparatus of the wafer processing ...

METHODS FOR CONTROLLING ETCH DEPTH BY LOCALIZED HEATING

Embodiments of the present disclosure relate to methods for controlling etch depth by providing localized heating across a substrate. The method for controlling temperatures across the substrate can include individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly. The plurality of heating pixels provide temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body. The temperature distributions correspond to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam. Additionally, the temperatures can be controlled by individually controlling light emitting diodes (LEDs) of LED arrays. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grating. The at least one grating has a distribution of depths corresponding to the temperature distributions. 1. A method for controlling temperature across different regions of a substrate , comprising:individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly, the plurality of heating pixels providing temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body, the temperature distributions corresponding to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam; and the temperature distributions include a first temperature at a first portion of the plurality of portions of the at least one grating and a second temperature at a second portion of the plurality of portions of the at least one grating; and', 'the first temperature is different than the second temperature., 'exposing the substrate to the ion beam to form a plurality of fins on the at least one grating, the at least one grating having a distribution of depths corresponding to the temperature ...

METHODS OF FORMING DEVICES ON A SUBSTRATE

Embodiments of the disclosure relate to systems and methods for forming devices on a substrate. For example, a method for forming devices on a substrate can include projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a first surface of a substrate and projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a second surface of a substrate. In these embodiments, the first surface and the second surface are on opposite sides of the substrate. Therefore, the ion beams can form the devices on both sides of the substrate. 1. A method for forming devices on a substrate , comprising:projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a first surface of a substrate; andprojecting one or more ion beams from one or more ion beam chambers to form one or more devices on a second surface of a substrate, wherein the first surface and the second surface are on opposite sides of the substrate.2. The method of claim 1 , wherein:each of the one or more ion beams are directed at an optimized angle relative to the first surface of the substrate; andeach of the one or more ion beams are directed at an optimized angle relative to the second surface of the substrate.3. The method of claim 1 , wherein the substrate is a flexible substrate.4. The method of claim 3 , further comprising:rolling portions of the substrate having the first and second surfaces in a path of the one or more ion beams via a rolling system.5. The method of claim 4 , wherein the rolling system comprises a plurality of rollers and a plurality of roller actuators.6. The method of claim 1 , further comprising moving a pedestal along at least one of a y-direction and an x-direction proximate the substrate such that the one or more devices are formed on different portions of the substrate.7. The method of claim 6 , wherein the pedestal is moved via a scanner.8. A system for forming devices ...

METHODS OF PRODUCING SLANTED GRATINGS

Methods of producing gratings with trenches having variable height and width are provided. In one example, a method includes providing an optical grating layer atop a substrate, and providing a patterned hardmask over the optical grating layer. The method may include forming a mask over just a portion of the optical grating layer and the patterned hardmask, and etching a plurality of trenches into the optical grating layer to form an optical grating. After trench formation, at least one of the following grating characteristics varies between one or more trenches of the plurality of trenches: a trench depth and a trench width. 1. A method of forming a diffracted optical element , comprising:providing an optical grating layer atop a substrate;providing a patterned hardmask over the optical grating layer;forming a mask over just a portion of the optical grating layer and the patterned hardmask, wherein the mask is formed directly atop a top surface of the optical grating layer; andetching a plurality of trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches.2. The method of claim 1 , wherein a first width of the first trench of the plurality of trenches is different than a second width of the second trench of the plurality of trenches.3. The method of claim 1 , further comprising patterning the mask prior to etching the plurality of trenches into the optical grating layer.4. The method of claim 1 , wherein the etching comprises performing an angled ion etch.5. The method of claim 4 , wherein the angled ion etch is performed by a reactive ion beam claim 4 , and wherein the substrate is scanned along a scan direction with respect to the reactive ion beam.6. The method of claim 1 , further comprising forming the patterned hardmask as a plurality of hardmask elements each separated from one another by a gap claim ...

METHOD OF FORMING GRATINGS

Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area. 1. A method of forming gratings , comprising:depositing a resist material on a grating material disposed over a substrate, the resist material having a first and second device area;patterning the resist material into a resist layer;projecting a first ion beam to the first device area for a first period of time to form a first plurality of gratings in the grating material, the first ion beam having a first angle to a surface of the substrate, the first ion beam having a first ion beam profile; andprojecting a second ion beam to the second device area for a second period of time to form a second plurality of gratings in the grating material, the second ion beam having a second angle to the surface of the substrate, the second ion beam having a second ion beam profile,wherein at least one of the first ion beam profile and the second ion beam profile is not uniform.2. The method of claim 1 , whereinthe first plurality of gratings has a first profile,the second plurality of gratings has a second profile, andthe first profile is different than the second profile.3. The method of claim 2 , wherein the first profile is a stepped profile.4. The method of claim 2 , wherein the first profile is a sloped profile.5. The method of claim 1 , wherein the resist material comprises a photoresist material.6. The method of claim 1 , whereinthe first angle is from about 5° to about 85°, andthe second angle is from about 95° ...

METHOD OF FORMING A PLURALITY OF GRATINGS

Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions. 1. A method of forming a first plurality of gratings , comprising:depositing a protective material over one or more first regions of a waveguide combiner disposed on a substrate, the protective material having a first thickness such that the protective material at least partially inhibits removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate; anddirecting the ion beam toward the substrate such that at least a portion of the grating material from the one or more first regions of the waveguide combiner is removed such that the first plurality of gratings is formed, wherein at least one of the gratings of the first plurality of gratings has an angle of about 5° to about 85°.2. The method of claim 1 , further comprising:depositing the protective material having a second thickness over at least one of one or more protected regions of the waveguide combiner such that the protective material with the second thickness totally inhibits removal of grating material in the one or more protected regions; andremoving the protective material over the one or more protected regions.3. The method of claim 1 , whereinat least one of the one or more first regions has a first portion and a second portion, andthe protective material disposed over the first portion is thicker than the protective material disposed over the ...

METHODS AND SYSTEMS FOR MULTI-AREA SELECTIVE ETCHING

Embodiments herein provide systems and methods for multi-area selecting etching. In some embodiments, a system may include a plasma source delivering a plurality of angled ion beams to a substrate, the substrate including a plurality of devices. Each of the plurality of devices may include a first angled grating and a second angled grating. The system may further include a plurality of blocking masks positionable between the plasma source and the substrate. A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the angled ion beams to pass therethrough to form the first angled gratings of each of the plurality of devices. A second blocking mask of the plurality of blocking masks may include a second set of openings permitting the angled ion beams to pass therethrough to form the second angled gratings of each of the plurality of devices. 1. A system for generating angled gratings , the system comprising:a plasma source delivering a plurality of angled ion beams to a substrate;a plurality of devices coupled to the substrate, the plurality of devices including a first angled grating and a second angled grating; anda plurality of blocking masks positionable between the plasma source and the substrate, wherein a first blocking mask of the plurality of blocking masks includes a first set of openings permitting the plurality of angled ion beams to pass therethrough to form the first angled grating of the plurality of devices, and wherein a second blocking mask of the plurality of blocking masks includes a second set of openings permitting the plurality of angled ion beams to pass therethrough to form the second angled grating of the plurality of devices.2. The system of claim 1 , wherein the plurality of devices further includes a third angled grating claim 1 , and wherein a third blocking mask of the plurality of blocking masks includes a third set of openings permitting the plurality of angled ion beams to pass ...

SCANNED ANGLED ETCHING APPARATUS AND TECHNIQUES PROVIDING SEPARATE CO-LINEAR RADICALS AND IONS

A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane. 1. A system , comprising:a substrate stage, configured to support a substrate, wherein a main surface of the substrate defines a substrate plane;an ion source, the ion source comprising an extraction assembly, the extraction assembly oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane; anda radical source, the radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane,wherein the substrate stage is further configured to scan the substrate along a first direction, the first direction lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.2. The system of claim 1 , the ion source comprising a first plasma source claim 1 , and the radical source comprising a second plasma source.3. The system of claim 1 , further comprising a neutralizing source claim 1 , disposed between the ion source and the substrate stage claim 1 , the neutralizing source arranged to direct electrons to the ion beam.4. The system of claim ...

MODULATION OF ROLLING K VECTORS OF ANGLED GRATINGS

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material. 1. A grating forming method , comprising: [{'sub': '1', 'a first portion of a grating to be formed on the substrate is positioned at a first rotation angle ϕbetween the ion beam and a first grating vector of one or more first fins to be formed by the ion beam contacting the first portion;'}, {'sub': 1', '1, 'the first rotation ϕangle is selected to form the one or more first fins with a first slant angle ϑ′;'}, {'sub': '2', 'a second portion of the grating to be formed on the substrate is positioned at a second rotation angle ϕbetween the ion beam and a second grating vector of one or more second fins to be formed by the ion beam contacting the second portion; and'}, {'sub': 2', '2', '1, 'the second rotation angle ϕis selected to form the one or more second fins of the grating with a second slant angle ϑ′different than the first slant angle ϑ′.'}], 'projecting an ion beam toward a substrate positioned on a platen, the ion beam being at an ion beam angle ϑ relative to a surface normal of the substrate, wherein2. The method of claim 1 , wherein the ion beam angle ϑ for the forming the one or more first fins and the one or more second fins is the same.3. The method of claim 2 , wherein forming the one or more first fins and the one or more second fins comprises moving the platen along an x-axis thereof.4. The method of claim 1 , wherein forming the one or more first fins and ...

MODULATION OF ION BEAM ANGLE

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material. 1. An ion beam housing , comprising:an ion beam source operable to project an ion beam at a beam angle; a plurality of electrodes positioned along and around a beam path of the ion beam source, wherein:', 'each electrode of the plurality of electrodes is coupled to a respective voltage source;', 'each electrode of the plurality of electrodes is coupled to a respective actuator; and', 'a controller in communication each actuator and voltage source, the controller operable to modulate the beam angle by at least one of adjusting a position of at least one of the plurality of electrodes relative to the beam path and adjusting a voltage provided to at least one of the plurality electrodes., 'an electrode set positioned downstream of the ion beam source, wherein the electrode set comprises2. The ion beam housing of claim 1 , wherein the plurality of electrodes further comprises;a plurality of entrance electrodes;a plurality of suppression electrodes positioned downstream of the entrance electrodes; anda plurality of exit electrodes positioned downstream of the suppression electrodes.3. The ion beam housing of claim 2 , wherein each of the entrance electrodes claim 2 , the suppression electrodes claim 2 , and the exit electrodes comprise an electrically conductive plate.4. The ion beam housing of claim 2 , wherein each of the entrance electrodes claim 2 , the suppression ...

SYSTEM AND METHOD FOR FORMING DIFFRACTED OPTICAL ELEMENT HAVING VARIED GRATINGS

Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates. 1. A system for generating angled gratings , the system comprising:a plasma source delivering an angled ion beam to a workpiece;a plurality of substrates coupled to the workpiece, each of the plurality of substrates including a first angled grating and a second angled grating; anda plurality of proximity masks positionable between the plasma source and the workpiece, wherein a first proximity mask of the plurality of proximity masks includes a first set of openings permitting the angled ion beam to pass therethrough to form the first angled gratings of each of the plurality of substrates, and wherein a second proximity mask of the plurality of proximity masks includes a second set of openings permitting the angled ion beam to pass therethrough to form the second angled gratings of each of the plurality of substrates.2. The system of claim 1 , wherein each of the plurality of substrates further includes a third angled grating claim 1 , and wherein a third proximity mask of the plurality of proximity masks includes a third set of openings permitting the angled ion beam to pass therethrough to form the ...

ETCH IMPROVEMENT

A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ϕbetween the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction. 1. A method comprising:exposing a first material disposed across a first plane on a first substrate during a first time period to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate, wherein{'sub': '1', 'the first substrate is positioned at a first rotation angle ϕbetween the ion beam and a first vector of the first plurality of structures during the first time period,'}the first vector is perpendicular to a direction in which the first plurality of structures extend across the first plane,the first material is exposed to the ion beam incrementally along a first direction during the first time period, andexposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction; and [{'sub': '2', 'the substrate is positioned at a second rotation angle ϕbetween the ion beam and the first vector of the first plurality of structures during the second time period,'}, {'sub': 2', '1, 'the second rotation angle ϕis the negative angle of the first rotation angle ϕ.'}], 'exposing the first material disposed to the ion beam ...

SHADOW MASK APPARATUS AND METHODS FOR VARIABLE ETCH DEPTHS

Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material. 1. A method , comprising:providing an etching material atop a substrate;positioning a shadow mask between the etching material and an ion source, wherein at least a portion of the shadow mask is separated from the etching material by a distance; andetching the etching material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the etching material is different than a second depth of a second portion of the etching material.2. The method of claim 1 , further comprising etching the etching material to form a plurality of structures and a plurality of trenches.3. The method of claim 2 , further comprising forming the plurality of structures at a non-zero angle with respect to a vertical extending from a top surface of the etching material.4. The method of claim 3 , further comprising providing a raised surface feature along a leading edge or a trailing edge of one or more openings of the set of openings claim 3 , wherein the raised surface feature has a non-uniform height along a direction extending parallel to a plane defined by the top surface of the etching material.5. The method of claim 4 , further comprising varying a distance between the shadow mask and the top surface of the grating material claim 4 , between the leading edge and the trailing edge of the one or more openings of the set of openings.6. The method of claim ...

SYSTEM AND METHOD FOR FORMING DIFFRACTED OPTICAL ELEMENT HAVING VARIED GRATINGS

Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates. 1. A method , comprising:providing a plasma source and a plurality of substrates, each of the plurality of substrates including a first target area and a second target area; andpositioning a plurality of proximity masks between the plasma source and the plurality of substrates, wherein a first proximity mask of the plurality of proximity masks includes a first set of openings permitting an angled ion beam to pass therethrough to the first target area of each of the plurality of substrates, and wherein a second proximity mask of the plurality of proximity masks includes a second set of openings permitting the angled ion beam to pass therethrough to the second target area of each of the plurality of substrates.2. The method of claim 1 , further comprising:delivering, from the plasma source, the angled ion beam towards the plurality of substrates; andreceiving the angled ion beam at the first proximity mask or the second proximity mask.3. The method of claim 1 , wherein a third proximity mask of the plurality of proximity masks includes a third set of openings permitting the angled ion beam to pass ...

CONTROLLING ETCH ANGLES BY SUBSTRATE ROTATION IN ANGLED ETCH TOOLS

Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle θ relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles θ′ relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos(tan(θ′)/tan(θ)). 1. A grating forming method , comprising: the first substrate is positioned at a first rotation angle ϕ between the ion beam and a grating vector of one or more first gratings to be formed by the ion beam contacting the grating material; and', 'the first rotation ϕ angle is selected to form the one or more first gratings with a first slant angle ϑ′ relative to the surface normal of the first substrate, the first slant angle ϑ′ different than the ion beam angle ϑ., 'projecting an ion beam to a first substrate having a grating material disposed thereon, the ion beam configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the first substrate, wherein2. The method of claim 1 , wherein the grating material includes at least one of silicon oxycarbide (SiOC) claim 1 , titanium dioxide (TiO) claim 1 , silicon dioxide (SiO2) claim 1 , vanadium (IV) oxide (VOx) claim 1 , aluminum oxide (AlO) claim 1 , indium tin oxide (ITO) claim 1 , zinc oxide (ZnO) claim 1 , tantalum pentoxide (TaO) claim 1 , silicon nitride (SiN) claim 1 , titanium nitride (TiN) claim 1 , and zirconium dioxide (ZrO) containing materials.3. ...

OPTICAL COMPONENT HAVING VARIABLE DEPTH GRATINGS AND METHOD OF FORMATION

An optical grating component may include a substrate, and an optical grating, the optical grating being disposed on the substrate. The optical grating may include a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures are arranged to define a variable depth along a first direction, the first direction being parallel to the plane of the substrate. 1. An optical grating component , comprising:a substrate; andan optical grating, the optical grating being disposed on the substrate,wherein the optical grating comprises a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures are arranged to define a variable depth along a first direction, the first direction being parallel to the plane of the substrate.2. The optical grating of claim 1 , wherein the plurality of angled structures extend along a second direction claim 1 , perpendicular to the first direction claim 1 , and wherein a grating height of an angled structure along the second direction is uniform.3. The optical grating component of claim 1 , wherein the variable depth comprises a smooth variation in depth along the first direction.4. The optical grating component of claim 2 ,wherein the optical grating is a first optical grating,the optical grating component further comprising a second optical grating, the second optical grating comprising a second plurality of angled structures, disposed at a second non-zero angle of inclination with respect to the perpendicular to the plane of the substrate, wherein the second plurality of angled structures are arranged to define a second variable depth along the second direction.5. The optical grating component of claim 1 , wherein the optical grating comprises silicon oxide claim 1 , silicon nitride claim 1 , or a glass.6. The ...

SYSTEM AND METHOD FOR OPTIMALLY FORMING GRATINGS OF DIFFRACTED OPTICAL ELEMENTS

Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optically transparent substrate, and forming an optical grating layer on the substrate. The method includes forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. A first sidewall of the optical grating may have a first angle, and a second sidewall of the grating has a second angle different than the first angle. Modifying process parameters, including selectivity and beam angle spread, has an effect of changing a shape or dimension of the plurality of angled components. 1. A method of forming an optical grating component , comprising:providing a patterned hardmask atop an optical grating layer; andetching the optical grating layer and the patterned hardmask to form an optical grating in the optical grating layer, wherein first and second sidewalls of the optical grating have different angles.2. The method of claim 1 , further comprising etching the optical grating layer and the patterned hardmask to form an optical grating in the optical grating layer claim 1 , wherein the optical grating comprises a plurality of angled components disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of a substrate.3. The method of claim 2 , further comprising forming first and second sidewalls of one or more of the plurality of angled components of the optical grating at different angles.4. The method of claim 2 , wherein the etching comprises etching the optical grating layer using an angled reactive ion etch.5. The method of claim 4 , wherein the angled reactive ion etch is performed by a ribbon reactive ion beam claim 4 , wherein the substrate is scanned along a scan direction with respect to the ribbon reactive ion beam using a processing recipe claim 4 , ...

Device And Method For Substrate Heating During Transport

A system for heating substrates while being transported between processing chambers is disclosed. The system comprises an array of light emitting diodes (LEDs) disposed in the transfer chamber. The LEDs may be GaN LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. A controller is in communication with the LEDs. The LEDs may be independently controllable, so that the LEDs that are disposed above the substrate as it is moved from one processing chamber to another are illuminated. In other words, the illumination of the LEDs and the movements of the substrate handling robot may be synchronized by the controller. 1. A substrate handling and heating system , comprising:a chamber housing, defining a chamber;a substrate handling robot disposed in the chamber; anda LED array, comprising a plurality of LEDs, disposed within the chamber, wherein the LED array is disposed between a top surface of the chamber housing and the substrate handling robot;wherein illumination of the LEDs in the LED array is dependent upon a path of a substrate traveling through the chamber.2. The substrate handling and heating system of claim 1 , wherein the chamber is a transfer chamber.3. The substrate handling and heating system of claim 2 , further comprising a plurality of processing chambers in communication with the transfer chamber claim 2 , wherein the path of the substrate is from one of the plurality of processing chambers to another of the plurality of processing chambers.4. The substrate handling and heating system of claim 3 , wherein at least one of the plurality of processing chambers comprises a load lock.5. The substrate handling and heating system of claim 1 , wherein only a portion of the LEDs in the LED array is illuminated at a particular time.6. The substrate handling and heating system of claim 1 , wherein the LEDs in the LED array disposed above the substrate are illuminated as the substrate travels ...

Selective Processing Of A Workpiece

Methods for the selective processing of the outer portion of a workpiece are disclosed. The outer portion is processed by directing an ion beam toward the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two locations. The workpiece is then rotated relative to the ion beam about the center so that all regions of the outer portion are exposed to the ion beam. The workpiece may be rotated an integral number of rotations. The ion beam may perform any process, such as ion implantation, etching or deposition. The outer portion may be an annular ring having an outer diameter equal to that of the workpiece and having a width of 1 to 30 millimeters. The rotation of the workpiece may be aligned with a notch on the outer edge of the workpiece. 1. A method of processing a workpiece , comprising:directing an ion beam toward the workpiece, where the ion beam extends beyond an outer edge of the workpiece at two locations; androtating the workpiece about a center while the ion beam is directed toward the workpiece, so as to process an outer portion of the workpiece.2. The method of claim 1 , wherein the workpiece is rotated an integral number of rotations.3. The method of claim 1 , wherein the ion beam is used to implant ions in the outer portion.4. The method of claim 1 , wherein the ion beam is used to etch material from the outer portion.5. The method of claim 1 , wherein the ion beam is used to deposit material on the outer portion.6. The method of claim 1 , wherein the outer portion is an annular ring having an outer diameter equal to a diameter of the workpiece and a width of between 1 and 30 mm.7. The method of claim 1 , wherein the workpiece comprises a notch along the outer edge claim 1 , and the ion beam is directed toward the notch when the rotating begins claim 1 , and the ion beam is directed toward the notch when the rotating ends.8. The method of claim 1 , wherein the directing and rotating are performed on the workpiece to compensate ...

DEVICE STRUCTURE FOR FORMING SEMICONDUCTOR DEVICE HAVING ANGLED CONTACTS

A memory device may include an active device region, disposed at least partially in a first level. The memory device may include a storage capacitor, disposed at least partially in a second level, above the first level, wherein the first level and the second level are parallel to a substrate plane. The memory device may also include a contact via, the contact via extending between the storage capacitor and the active device region, and defining a non-zero angle of inclination with respect to a perpendicular to the substrate plane. 1. A method of fabricating a semiconductor device , comprising:forming an active device region in a first level of the semiconductor device;forming a contact via, the contact via contacting the active device region, the contact via forming a non-zero angle of inclination with respect to a perpendicular to a substrate plane; andforming a storage capacitor, at least partially in a second level of the semiconductor device, above the first level, wherein the storage capacitor contacts the contact via.2. The method of claim 1 , wherein the storage capacitor forms no overlap with the active device region within the substrate plane from a plan view perspective.3. The method of claim 1 , wherein the non-zero angle of inclination is less than 15 degrees.4. The method of claim 1 , wherein the active device region and the storage capacitor form a portion of a dynamic random-access memory (DRAM) cell claim 1 , wherein the DRAM cell forms a portion of a DRAM device claim 1 , and wherein the DRAM device comprises a 6Fstructure.5. The method of claim 1 , wherein the active device region and the storage capacitor form a portion of a dynamic random-access memory (DRAM) cell claim 1 , wherein the contact via extends through a digit line level of the DRAM cell including a digit line claim 1 , while not contacting the digit line.6. The method of claim 1 , wherein the forming the contact via comprises:providing a substrate containing the active device region ...

Hybrid Thermal Electrostatic Clamp

An electrostatic clamp having improved temperature uniformity is disclosed. The electrostatic clamp includes an LED array mounted along an annular ring so as to illuminate the outer edge of the workpiece. The LEDs in the LED array may emit light at a wavelength readily absorbed by the workpiece, such as between 0.4 μm and 1.0 μm. The center portion of the workpiece is heated using conductive heating provided by the heated electrostatic clamp. The outer portion of the workpiece is heated by light energy from the LED array. The LED array may be disposed on the base of the electrostatic clamp, or may be disposed on a separate ring. The diameter of the upper dielectric layer of the electrostatic clamp may be modified to accommodate the LED array. 1. An electrostatic clamp , comprising:a base having a top surface with a first diameter;an upper dielectric layer having a bottom surface with a second diameter, wherein the bottom surface of the upper dielectric layer is disposed on the top surface of the base and the second diameter is less than the first diameter, so as to create a horizontal annular ring on the top surface of the base; anda LED array disposed on the horizontal annular ring.2. The electrostatic clamp of claim 1 , wherein the upper dielectric layer has a top surface having a third diameter claim 1 , wherein the third diameter is greater than the second diameter.3. The electrostatic clamp of claim 1 , wherein the upper dielectric layer has a top surface having a third diameter claim 1 , wherein the third diameter is equal to the second diameter.4. The electrostatic clamp of claim 1 , wherein the LED array comprises a plurality of LEDs which emit light at a wavelength readily absorbed by a workpiece clamped to the upper dielectric layer.5. The electrostatic clamp of claim 4 , wherein the plurality of LEDs emit light at a wavelength between 0.4 and 1.0 μm.6. The electrostatic clamp of claim 1 , further comprising a controller in communication with the LED array ...

APPARATUS AND METHOD FOR CONTROLLING IMPLANT PROCESS

An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms. 1. An apparatus , comprising:a beam scanner to apply, during a non-uniform scanning mode, a plurality of different waveforms to generate a scan of an ion beam along a scan direction, wherein a given waveform of the plurality of different waveforms comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate;a current detector disposed to intercept the ion beam outside of a substrate region and configured to record a measured integrated current of the ion beam for a given waveform; anda scan adjustment component coupled to the beam scanner and comprising logic to determine when a beam width of the ion beam along the scan direction exceeds a threshold; and determine a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of different waveforms when operating in the non-uniform scanning mode.2. The apparatus of claim 1 , further comprising a substrate stage to hold a substrate in the substrate region ...

Apparatus For Heating And Processing A Substrate

A system and method for heating a substrate while that substrate is being processed by an ion beam is disclosed. The system comprises two arrays of light emitting diodes (LEDs) disposed above and below the ion beam. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LED arrays may be arranged so that the ion beam passes between the two LED arrays and strikes the substrate. As the substrate is translated relative to the ion beam, the LEDs from the LED arrays provide heating to the substrate. 1. A substrate heating and processing system , comprising:a first LED array and a second LED array, each comprising a plurality of LEDs, disposed between an ion source and a substrate;wherein an ion beam passes between the first LED array and the second LED array toward the substrate, and the first LED array and the second LED array are disposed on opposite sides of the ion beam in a first direction.2. The substrate heating and processing system of claim 1 , further comprising a platen on which the substrate may be disposed claim 1 , the platen configured to be translated relative to the ion beam in the first direction.3. The substrate heating and processing system of claim 1 , wherein the ion beam is a ribbon ion beam claim 1 , having a width greater than its height and greater than a diameter of the substrate claim 1 , and the first direction is a height direction.4. The substrate heating and processing system of claim 1 , wherein the plurality of LEDs emit light at a wavelength absorbed by the substrate.5. The substrate heating and processing system of claim 4 , wherein the wavelength is between 0.4 and 1.0 μm.6. The substrate heating and processing system of claim 1 , further comprising a controller to control illumination and power applied to the plurality of LEDs.7. The substrate heating and processing system of claim 6 , further comprising a temperature sensor ...

Substrate Handling And Heating System

A system for heating substrates while being transported between the load lock and the platen is disclosed. The system comprises an array of light emitting diodes (LEDs) disposed above the alignment station. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LEDs may be arranged so that the rotation of the substrate during alignment results in a uniform temperature profile of the substrate. Further, heating during alignment may also increase throughput and eliminate preheating stations that are currently associated with the processing chamber. 1. A substrate handling and heating system , comprising:a processing chamber;a substrate handling robot disposed in the processing chamber;an alignment station disposed in the processing chamber; anda LED array, comprising a plurality of LEDs, disposed above the alignment station, to heat a substrate during an alignment process.2. The substrate handling and heating system of claim 1 , wherein the plurality of LEDs emit light at a wavelength absorbed by the substrate.3. The substrate handling and heating system of claim 2 , wherein the wavelength is between 0.4 and 1.0 μm.4. The substrate handling and heating system of claim 1 , wherein the alignment station comprises a rotatable surface and wherein the plurality of LEDs are illuminated while the rotatable surface is rotating.5. A substrate handling and heating system claim 1 , comprising: a rotatable surface on which a substrate is disposed; and', 'a detection system, comprising an emitter disposed on one side of the substrate and a detector disposed on an opposite side of the substrate;, 'an alignment station, comprisingan LED array, comprising a plurality of LEDs, disposed above at least a portion of the substrate when the substrate is disposed on the rotatable surface; anda controller to actuate and turn off the LED array.6. The substrate handling and heating system ...

MALWARE DETECTION IN DISTRIBUTED COMPUTER SYSTEMS

Methods and systems of malware detection in distributed computer systems. An example method includes: receiving, by a network router, a network packet originated by a client computer; matching the network packet to a default route; forwarding the network packet to a command and control server simulator; and forwarding, to the client computer system, one or more response packets comprising a command and control instruction issued to the client computer system by the command and control server simulator. 1. A method , comprising:receiving, by a network router, a network packet originated by a client computer;matching the network packet to a default route;forwarding the network packet to a command and control server simulator; andforwarding, to the client computer system, one or more response packets comprising a command and control instruction issued to the client computer system by the command and control server simulator.2. The method of claim 1 , wherein matching the network packet to a default route further comprises:failing to match the network packet to one or more routes identified by at least one of: a destination address or a destination port number.3. The method of claim 1 , wherein forwarding the response packet comprises modifying a source address of the response packet to match a destination address of the network packet originated by the client computer system.4. The method of claim 1 , wherein the network router is provided by an Open Systems Interconnection (OSI) layer 3 (network layer) router.5. The method of claim 1 , further comprising:responsive to receiving a notification from the command and control server simulator, creating a routing rule causing the network router to discard subsequent network packets addressed to the destination address of the network packet.6. The method of claim 1 , further comprising:forwarding the network packet originated by the client computer system to a traffic analyzer for detecting malware activity.7. The method of ...

Three dimensional structure fabrication control using novel processing system

An apparatus may include a processor and memory unit, including a control routine having a measurement processor to determine, based upon a first set of scatterometry measurements, a first change in a first dimension of a first set of substrate features along a first direction. The first set of substrate features may be elongated along a second direction perpendicular to the first direction. The measurement processor may be to determine, based upon a second set of scatterometry measurements, a second change in dimension of a second set of substrate features along the second direction, wherein the second set of substrate features is elongated along the first direction. The apparatus may include a control processor to generate an error signal when a figure of merit based upon the first change and the second change lies outside a target range.

Electrostatic Chuck With LED Heating

An electrostatic chuck with LED heating is disclosed. The electrostatic chuck with LED heating comprises a first subassembly, which comprises a LED heater, and a second subassembly, which comprises an electrostatic chuck. The LED substrate heater subassembly includes a base having a recessed portion. A plurality of light emitting diodes (LEDs) is disposed within the recessed portion. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The second subassembly, which comprises an electrostatic chuck, is disposed on the LED substrate heater subassembly. The electrostatic chuck includes a top dielectric layer and an interior layer that are transparent at the wavelength emitted by the LEDs. One or more electrodes are disposed between the top dielectric layer and the interior layer to create the electrostatic force. 1. An apparatus comprising:a sealed enclosure containing an electrical circuit comprising a plurality of LEDs, wherein a top surface of the sealed enclosure comprises an electrostatic chuck.2. The apparatus of claim 1 , wherein the electrostatic chuck comprises:an interior layer in communication with the sealed enclosure;a top dielectric layer; andan electrode disposed between the interior layer and the top dielectric layer.3. The apparatus of claim 1 , wherein the sealed enclosure is filled with an encapsulate to remove air.4. The apparatus of claim 1 , wherein the plurality of LEDs emits light at a wavelength between about 0.4 and 1.0 μm.5. An electrostatic chuck with LED heating claim 1 , comprising:a base having a recessed portion defined by sidewalls;an electrical circuit, comprising a plurality of LEDs, disposed in the recessed portion;an interior layer disposed on top of the sidewalls and covering the recessed portion;a top dielectric layer; andan electrode disposed between the interior layer and the top dielectric layer, wherein the interior layer and ...

Compounds having somatostatin-like activity useful for the manufacture of local anti-inflammatory compositions

Compounds having somatostatin-like activity have been found to be useful for the manufacture of local anti-inflammatory agents in the treatment of such conditions as, for example, psoriasis, eczema, seborrhea, and other localized inflammatory and allergic conditions. Particularly useful are cyclic and bridged somatostatin analogs.

VARIABLE HEIGHT SLANTED GRATING METHOD

An apparatus with a grating structure and a method for forming the same are disclosed. The grating structure includes forming a recess in a grating layer. A plurality of channels is formed in the grating layer to define slanted grating structures therein. The recess and the slanted grating structures are formed using a selective etch process.

Device for sealing pipes

Process for producing a tetrafluoroethylene polymer powder

Ion beam current monitoring

An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.

Improvements in the Application of Dyestuffs.

23,386. Lodge, E., and Evans, J. M. Nov. 18. [Addition to 29,852/13.] Vat dyeing.-The process described in the parent Specification is applied in the dyeing of animal fibres, fur, feathers, and artificial silk.

Magnetic monitoring of a faraday cup for an ion implanter

This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.

Shaped articles

Scanned Angular Etch Apparatus and Technique to Provide Distinct Collinear Radicals and Ions

【課題】均一な反応性ラジカル支援イオンビームエッチングを実現するための装置を提供する。【解決手段】システムは、基板を支持するように構成された基板ステージを含み、基板の主表面は基板面を画定する。このシステムは、基板面に対する垂線に対してゼロでない入射角を画定する軌道に沿って、基板にイオンビームを方向付けるように配向されている抽出アセンブリを含む、イオン源を含みうる。システムは、基板面に対する垂直線に対してゼロでない入射角を画定する軌道に沿って、基板にラジカルビームを方向付けるように配向されたラジカル源を含みうる。基板ステージは、基板の主表面が基板面内に配向される際に、基板面内にある第１の方向に沿って基板を走査するように更に構成されうる。【選択図】図１Ａ

Overhead self-levelling lift system for transporting payloads in dynamic settings and use thereof

A self-levelling lift system is provided, to transport payloads in dynamic settings. The lift comprises a superstructure, first and second support members, a carriage and a drive. The superstructure has rails along which the carriage moves. The support members allow for the superstructure to change angle in response to a changing relationship between a first surface and a second surface, such as the shore and a boat. Also provided is a use of the system for concurrently transporting a payload and allowing for pedestrian traffic.

Push-caching scheme for a late-binding advertisement architecture

A system providing late-binding of advertisements to video content and incorporating a push-caching scheme is disclosed. In general, the system includes an advertisement server located at a central location such as a central headend and a number of late-binding systems located at locations such as a number of remote headends. The late-binding systems are connected to the advertisement server via a Wide Area Network (WAN). Each of the late-binding systems is also connected to an associated advertisement cache via a Local Area Network (LAN). A cache assignment agent associated with the advertisement server operates to push advertisements to the advertisement caches associated with the late-binding systems in a predictive fashion based on, for example, historical information for the late-binding systems and/or profiles of users or viewers associated with the client devices served by the late-binding systems.

Formation of angled gratings

System and method for optimally forming gratings of diffracted optical elements

Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optically transparent substrate, and forming an optical grating layer on the substrate. The method includes forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. A first sidewall of the optical grating may have a first angle, and a second sidewall of the grating has a second angle different than the first angle. Modifying process parameters, including selectivity and beam angle spread, has an effect of changing a shape or dimension of the plurality of angled components.

Three dimensional structure fabrication control using novel processing system

An apparatus may include a processor and memory unit, including a control routine having a measurement processor to determine, based upon a first set of scatterometry measurements, a first change in a first dimension of a first set of substrate features along a first direction. The first set of substrate features may be elongated along a second direction perpendicular to the first direction. The measurement processor may be to determine, based upon a second set of scatterometry measurements, a second change in dimension of a second set of substrate features along the second direction, wherein the second set of substrate features is elongated along the first direction. The apparatus may include a control processor to generate an error signal when a figure of merit based upon the first change and the second change lies outside a target range.

Compounds having somatostatin-like activity useful for the manufacture of local anti-inflammatory compositions

Compounds having somatostatin-like activity have been found to be useful for the manufacture of local anti-­ inflammatory agents in the treatment of such conditions as, for example, psoriasis, eczema, seborrhea, and other local­ ized inflammatory and allergic conditions. Particularly useful are cyclic and bridged somatostatin analogs.

Boat-motor support.

Magnetic monitoring of a faraday cup for an ion implanter

This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.

Mechanical toy

Modulation of ion beam angle

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

Client-side watermarking using hybrid I-Frames

A system and method for client-side watermarking of digital content using hybrid Intra-Frames (I-Frames) are provided. In general, a content source provides a compressed video stream and a hybrid I-Frame stream to a client device via a network. The hybrid I-Frame stream includes a number of low-loss I-Frames corresponding to select ones of the I-Frames in the compressed video stream to be used for client-side watermarking. The client device watermarks the I-Frames in the hybrid I-Frame stream, optionally compresses the watermarked I-Frames, and replaces the select ones of the I-Frames in the compressed video stream with the watermarked and optionally compressed I-Frames to provide a watermarked version of the compressed video stream.

Interconnect device to enable compliance with rights management restrictions

To help ensure that only authorized media content that is associated with rights management (RM) restrictions is delivered from a compliant RM interface of a source device to a non-compliant RM interface of a destination device, an interconnect device provides a compliant RM interface to connect to the source device and monitors media content received from the source device to detect an embedded digital watermark. The interconnect device takes the necessary steps to determine if the watermark is authentic and control delivery of the media content to the destination device accordingly. The interconnect device may go back to the source device or to a remote service to authenticate the watermark. If the watermark is authentic, the media content is passed by the interconnect device to the non-compliant interface of the destination device outside of normal RM restrictions. Otherwise, the delivery of the media content is restricted by the interconnect device.

New liquid crystal display device and method

New liquid crystal display device and method

A liquid crystal display device having a liquid crystal layer interposed between a pair of substrates, said substrates being coupled to each other through an insulative sealing material at the peripheral portions thereof, one of said pair of substrates being a transparent front substrate through which viewing of the display device occurs, and a graphite containing matrix (50) coating on an inside surface of the front substrate, said coating having a matrix of apertures (52) therein, said coating being applied by application of a composition comprising in weight percent, about 1% to about 30% colloidal graphite, about 0.1% to about 20% binder material for the coating, and about 10% to about 98% of a fluid carrier, said applied coating having a thickness of less than about 20 microns.

Liquid crystal device and method

A liquid crystal display device having a liquid crystal layer interposed between a pair of substrates, said substrates being coupled to each other through an insulative sealing material at the peripheral portions thereof, one of said pair of substrates being a transparent front substrate through which viewing of the display device occurs, and a graphite containing matrix coating on an inside surface of the front substrate, said coating having a matrix of apertures therein, said coating being applied by application of a composition comprising in weight percent, about 1% to about 30% colloidal graphite, about 0.1% to about 20% binder material for the coating, and about 10% to about 98% of a fluid carrier, said applied coating having a thickness of less than about 20 microns.

Modulation of rolling k vectors of angled gratings

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle Q relative to a surface normal of the substrates and form gratings in the grating material.

Magnet amplifier

Gate all around device and method of formation using angled ions

A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.

A method of forming gratings

Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.