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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 1933. Отображено 100.

09-02-2012 дата публикации

Reactive sputtering with multiple sputter sources

Номер: US20120031749A1

Автор: Hartmut Rohrmann, Kurt Ruhm, Martin Dubs

Принадлежит: OC OERLIKON BALZERS AG

The apparatus ( 1 ) for coating a substrate ( 14 ) by reactive sputtering comprises an axis ( 8 ), at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ) and a power supply connected to the targets ( 11,12 ), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate ( 14 ) by coating a substrate ( 14 ) by reactive sputtering in an apparatus ( 1 ) comprising an axis ( 8 ). The method comprises a) providing a substrate ( 14 ) to be coated; b) providing at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ); c) alternatively operating said targets ( 11,12 ) as cathode and anode during coating. Preferably, the targets ( 11,12 ) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

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Номер записи: 1

26-04-2012 дата публикации

Rf impedance matching network with secondary dc input

Номер: US20120097104A1

Автор: Gerald E. Boston, John A. Pipitone

Принадлежит: Comet Technologies USA Inc

Embodiments of the disclosure may provide a matching network for a physical vapor deposition system. The matching network may include an RF generator coupled to a first input of an impedance matching network, and a DC generator coupled a second input of the impedance matching network. The impedance matching network may be configured to receive an RF signal from the RF generator and a DC signal from the DC generator and cooperatively communicate both signals to a deposition chamber target through an output of the impedance matching network. The matching network may also include a filter disposed between the second input and the output of the impedance matching network.

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Номер записи: 2

23-08-2012 дата публикации

Uniformity tuning capable esc grounding kit for rf pvd chamber

Номер: US20120211354A1

Автор: Alan A. Ritchie, Muhammad M. Rasheed, Rongjun Wang, Thanh X. Nguyen

Принадлежит: Applied Materials Inc

Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

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Номер записи: 3

02-05-2013 дата публикации

Film formation apparatus and film formation method

Номер: US20130105310A1

Автор: Hiroshi Tamagaki, Kenji Yamamoto, Satoshi Hirota

Принадлежит: Kobe Steel Ltd

A film formation apparatus of the present invention has two sputtering evaporation sources each of which includes an unbalanced magnetic field formation means formed by an inner pole magnet arranged on the inner side and an outer pole magnet arranged on the outer side of this inner pole magnet, the outer pole magnet having larger magnetic line density than the inner pole magnet, and a target arranged on a front surface of the unbalanced magnetic field formation means, and further has an AC power source for applying alternating current whose polarity is switched with a frequency of 10 kHz or more between the targets of the two sputtering evaporation sources so as to generate discharge between both the targets and perform film formation.

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Номер записи: 4

13-06-2013 дата публикации

Apparatus and method for depositing hydrogen-free ta-c layers on workpieces and workpiece

Номер: US20130146443A1

Автор: Frank Papa, Ivan KOLEV, Roel Tietema, Ruud Jacobs

Принадлежит: HAUZER TECHNO COATING BV

An apparatus for the manufacture of at least substantially hydrogen-free ta-C layers on substrates, which includes a vacuum chamber, which is connectable to an inert gas source and a vacuum pump, a support device in the vacuum chamber, at least one graphite cathode having an associated magnet arrangement forming a magnetron that serves as a source of carbon material, a bias power supply for applying a negative bias voltage to the substrates on the support device, at least one cathode power supply for the cathode, which is connectable to the at least one graphite cathode and to an associated anode and which is designed to transmit high power pulse sequences spaced at intervals of time, with each high power pulse sequence comprising a series of high frequency DC pulses adapted to be supplied, optionally after a build-up phase, to the at least one graphite cathode.

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Номер записи: 5

31-10-2013 дата публикации

Radio frequency tuned substrate biased physical vapor deposition apparatus and method of operation

Номер: US20130284589A1

Автор: Jeffrey Birkmeyer, Youming Li

Принадлежит: Fujifilm Corp

A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

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Номер записи: 6

07-01-2021 дата публикации

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

Номер: US20210005438A1

Автор: IWATA Hiroshi

Принадлежит:

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. 1. A sputtering cathode assembly , comprising:a pair of long-side portions each comprising a hollow cylindrical sputtering target supported by a shaft for rotation about a longitudinal central axis thereof, with the long-side portions being arranged parallel to each other and opposing each other across an interior region of the sputtering cathode assembly;a pair of short-side portions, with each of the pair of short-side portions extending between the pair of long-side portions near respective ends thereof and being arranged perpendicularly to the long-side portions and opposing each other across the interior region of the sputtering cathode assembly, the short-side portions each having a rectangular cross-section taken at a lengthwise central portion thereof;a long-side permanent magnet disposed within the hollow cylindrical sputtering target comprising each of the long-side portions, with each of the long-side permanent magnets extending lengthwise within its associated hollow cylindrical sputtering target with a north pole disposed toward one side of the associated hollow cylindrical sputtering target and a south pole disposed toward an opposite side of the associated hollow cylindrical sputtering target;a set of short-side permanent magnets associated with each of the short-side portions on a side thereof that is distal ...

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Номер записи: 7

08-01-2015 дата публикации

PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR

Номер: US20150007940A1

Автор: Funazaki Kazunori, KANEKO Kazushi, KATO Hideo

Принадлежит: TOKYO ELECTRON LIMITED

Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components. 1. A plasma processing device which processes an object to be processed using plasma , the plasma processing device comprising:a processing container configured to perform a processing by the plasma therein; anda plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves, and the plasma generation mechanism being configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator,wherein the high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator, the signal having a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and having reduced different frequency components.2. The plasma processing device of claim 1 , wherein the high-frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high-frequency ...

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Номер записи: 8

14-01-2021 дата публикации

APPARATUS AND METHOD FOR TREATING SUBSTRATE

Номер: US20210013008A1

Автор: Hong Jun Pyo, Lee Ki Yung, LEE SEUNGBAE

Принадлежит:

Provided is an apparatus for treating a substrate. The substrate treating apparatus includes a substrate supporting unit for supporting the substrate and fixing the substrate with electrostatic force, a plasma generating unit for generating a discharging plasma for discharging a charge of the substrate, and a power supplying unit for supplying power to the substrate supporting unit and the plasma generating unit, wherein the power supplying unit supplies power of a fluctuating pattern to the plasma generating unit when a charge of the substrate is discharged. 1. An apparatus for treating a substrate comprising:a substrate supporting unit for supporting the substrate and fixing the substrate with electrostatic force;a plasma generating unit for generating a discharging plasma for discharging a charge of the substrate; anda power supplying unit for supplying power to the substrate supporting unit and the plasma generating unit,wherein the power supplying unit supplies power of a fluctuating pattern to the plasma generating unit when a charge of the substrate is discharged.2. The substrate treating apparatus of claim 1 ,wherein the power supplying unit comprises,a first power supplying unit for supplying DC power to the substrate supporting unit; anda second power supplying unit for supplying RF power to the plasma generating unit.3. The substrate treating apparatus of claim 2 ,wherein the first power supplying unit,applies a first discharging DC voltage that is smaller compared to a DC voltage for process treating of the substrate when a charge of the substrate is discharged, andapplies a second discharging DC voltage that is smaller than the first discharging DC voltage after the first discharging DC voltage is applied.4. The substrate treating apparatus of claim 2 ,wherein the second power supplying unit,supplies a first discharging RF power that is smaller compared to RF power for process treating of the substrate when a charge of the substrate is discharged, ...

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Номер записи: 9

09-01-2020 дата публикации

METHODS AND APPARATUS FOR LINEAR SCAN PHYSICAL VAPOR DEPOSITION WITH REDUCED CHAMBER FOOTPRINT

Номер: US20200013592A1

Автор: LAVITSKY Ilya, MAZZOCCO JOHN JOSEPH

Принадлежит:

Apparatus and method for physical vapor deposition (PVD) are provided. The apparatus can include a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation; and a selectively sealable aperture disposed between the linear PVD source and the substrate support, the selectively sealable aperture including two movable shields that are independently movable and configured to control a size and location of the selectively sealable aperture. 1. An apparatus for physical vapor deposition (PVD) , comprising:a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate;a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation; anda selectively sealable aperture disposed between the linear PVD source and the substrate support, the selectively sealable aperture including two movable shields that are independently movable and configured to control a size and location of the selectively sealable aperture.2. The apparatus of claim 1 , wherein the substrate support is configured to rotate the substrate within the plane of the substrate ...

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Номер записи: 10

14-01-2021 дата публикации

APPARATUS FOR AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Номер: US20210013410A1

Автор: JUNG Jaeho, Kim Kyoung Sun, PARK Changyup, PARK JeongHee, Park Jiho

Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate. 120.-. (canceled)21. A method of fabricating a semiconductor device , comprising:providing a substrate on a heater chuck in a chamber including a housing and a slit valve, wherein the slit valve is configure to open or close a portion of the housing;heating the substrate using the heater chuck; anddepositing a phase transition layer on the substrate by a physical vapor deposition method using a heat-dissipation shield between the housing and the heater chuck, and an edge heating structure between the heat-dissipation shield and the housing, an upper lamp provided above a level of a top surface of the slit valve, and', 'a lower lamp provided below a level of a bottom surface of the slit valve, and, 'wherein the edge heating structure compriseswherein the heat-dissipation shield includes a tube shield, which extends from a top portion of the housing to a region below the heater chuck and has a first opening adjacent to the slit valve.22. The method of claim 21 , wherein the heater chuck is rotated by a shaft in a bottom of the housing claim 21 , and the heat-dissipation shield further comprises a first sector shield configured to open or close the first opening.23. The method of claim ...

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Номер записи: 11

17-04-2014 дата публикации

Film-forming apparatus

Номер: US20140102889A1

Автор: Kazuya Konaga, Yasushi Yasumatsu, Yuji Kajihara

Принадлежит: Canon Anelva Corp

An apparatus includes a plurality of target electrodes having attachment surfaces, a substrate holder, a first shutter member provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, a first separating portion disposed between the openings of the first shutter member on its surface of the target electrode side, and a second separating portion disposed between the first shutter member and the target electrodes. The first shutter member is driven so as to bring the first separating portion and the second separating portion toward each other so that an indirect path can be formed between the first separating portion and the second separating portion, and driven so as to bring the first separating portion and the second separating portion away from each other so that the first shutter plate can be rotated.

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Номер записи: 12

03-02-2022 дата публикации

Deposition System With Multi-Cathode And Method Of Manufacture Thereof

Номер: US20220037136A1

Автор: Anantha K. Subramani, Ashish Goel, Chi Hong Ching, DEEPAK JADHAV, Hanbing Wu, Prashanth Kothnur

Принадлежит: Applied Materials Inc

A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

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Номер записи: 13

22-01-2015 дата публикации

System and method for balancing consumption of targets in pulsed dual magnetron sputtering (dms) processes

Номер: US20150021167A1

Автор: David Christie

Принадлежит: Advanced Energy Industries Inc

A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

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Номер записи: 14

28-01-2016 дата публикации

Sputtering apparatus

Номер: US20160027623A1

Автор: Shigenori Ishihara

Принадлежит: Canon Anelva Corp

A sputtering apparatus includes a shutter arranged having a first surface on a side of a substrate holder and a second surface on the opposite side, a first shield having a third surface including a portion facing the second surface and a fourth surface on the opposite side, a second shield having a fifth surface including a portion facing end portions of the shutter and the first shield, and a gas supply unit supplying a gas into a space arranged outside the first shield to communicate with a first gap between the second surface of the shutter and the third surface of the first shield. The second shield includes a protruding portion on the fifth surface to form a second gap between the protruding portion and the end portion of the shutter.

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Номер записи: 15

10-02-2022 дата публикации

SPUTTERING APPARATUS AND FILM FORMING METHOD

Номер: US20220044920A1

Автор: Abarra Einstein Noel, HIRASAWA Tatsuo, ISHIBASHI Shota, IWASHITA Hiroyuki, SHINADA Masato, TOSHIMA Hiroyuki

Принадлежит:

A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden. 1. A sputtering apparatus comprising:a first target and a second target that emit sputter particles:a substrate support configured to support a substrate: anda slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass,wherein the slit unit includes a first slit to the first and the second target side and a second slit to the substrate side,the second slit has a first protrusion and a second protrusion protruding toward a center of the second slit,when the slit unit is viewed from the first target, the first protrusion is hidden, andwhen the slit unit is viewed from the second target, the second protrusion is hidden.2. The sputtering apparatus of claim 1 , further comprising:a substrate moving mechanism configured to move the substrate supported by the substrate support in a sliding direction,wherein the first target and the second target are arranged in the sliding direction of the substrate and inclined toward the slit unit.3. The sputtering apparatus of claim 1 , wherein the first slit limits a minimum incident angle of the sputter particles incident on the substrate from the first target and the second target claim 1 , andthe second slit limits a maximum incident angle of the sputter particles ...

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Номер записи: 16

24-01-2019 дата публикации

PROCESSING APPARATUS AND COLLIMATOR

Номер: US20190027346A1

Автор: Aoyama Yasuhiro, KATO Shiguma, TAKEUCHI Masakatsu, TERADA Takahiro, TOKUDA Yoshinori

Принадлежит: KABUSHIKI KAISHA TOSHIBA

A processing apparatus according to an embodiment includes an object placement unit, a source placement unit, a flow rectifying member, and a power supply. The object placement unit is configured to have an object placed thereon. The source placement unit is disposed apart from the object placement unit and configured to have a particle source capable of ejecting a particle toward the object placed thereon. The flow rectifying member is disposed between the object placement unit and the source placement unit in a first direction from the source placement unit to the object placement unit. The power supply is configured to apply, to the flow rectifying member, a voltage having the same polarity as that of an electric charge in the particle. 1. A processing apparatus comprising:an object placement unit configured to have an object placed thereon;a source placement unit disposed apart from the object placement unit and configured to have a particle source placed thereon, the particle source being capable of ejecting a particle toward the object;a flow rectifying member configured to be disposed between the object placement unit and the source placement unit in a first direction from the source placement unit to the object placement unit; anda power supply configured to apply, to the flow rectifying member, a voltage having the same polarity as a polarity of an electric charge in the particle.2. The processing apparatus according to claim 1 , whereinthe flow rectifying member includes a first collimator and a second collimator,the first collimator is disposed between the object placement unit and the source placement unit, includes a plurality of first walls, and is provided with a plurality of first through holes formed by the first walls and extending in the first direction,the second collimator is disposed closer to the object placement unit than the first collimator between the object placement unit and the source placement unit, includes a plurality of second walls ...

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Номер записи: 17

04-02-2016 дата публикации

Deposition Tool for Combinatorial Thin Film Material Libraries

Номер: US20160030909A1

Автор: DEDUYTSCHE Davy, DETAVERNIER Christophe

Принадлежит: Universiteit Gent

A system for combinatorial deposition of a thin layer on a substrate is described. The system comprises at least one deposition material source holder and a substrate holder. The system also comprises a rotatable positioning system for subsequently positioning the at least one substrate in parallel and in non-parallel configuration with at least one deposition material source. The system comprises at least one mask holder arranged for positioning a mask between at least one of the target holder and the positioning system, for allowing variation of the material flux across the at least one substrate when the combinatorial deposition is performed. The mask holder is in a fixed arrangement with respect to the at least one deposition material source holder during the combinatorial depositing. 116-. (canceled)17. A system for combinatorial depositing of a thin film having a varying composition and/or a varying thickness on at least one substrate , the system comprisingat least one deposition material source holder arranged so as to carry a deposition material source,a substrate holder adapted for carrying at least one substrate,a rotatable positioning system having a rotation axis for relatively moving the substrate holder and the at least one deposition material source holder with respect to each other for subsequently positioning the at least one substrate in a parallel configuration in front of at least one of the at least one deposition material source and in a non-parallel configuration non parallel with the at least one of the at least one deposition material source during the combinatorial deposition, andat least one mask holder arranged for positioning a mask between at least one of the at least one deposition material source holder and the substrate holder, for allowing variation of the material flux across the at least one substrate when the combinatorial deposition is performed, and the at least one mask holder being in a fixed arrangement with respect to the ...

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Номер записи: 18

02-02-2017 дата публикации

Method of coating high aspect ratio features

Номер: US20170029937A1

Автор: Bassam Hanna Abraham, Roman Chistyakov

Принадлежит: Zond LLC

A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode inside the chamber. A magnet is positioned adjacent to cathode assembly. A platen that supports a substrate is positioned adjacent to the cathode assembly. An output of the power supply is electrically connected to the cathode assembly. The power supply generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge from the feed gas that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

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Номер записи: 19

02-02-2017 дата публикации

HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS

Номер: US20170029941A1

Автор: ALLEN ADOLPH MILLER, Chang Mei, Cox Michael S., Gandikota Srinivas, GE ZHENBIN, GUNG TZA-JING, HAWRYLCHAK LARA, Liu Zhendong, Rasheed Muhammad M., SAVANDAIAH Kirankumar, TANG XIANMIN, Wang Rongjun, Xie Zhigang, YOUNG DONNY

Принадлежит:

Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber. 1. A plasma processing chamber , comprising:a target having a first surface that is in contact with a processing region and a second surface that is opposite the first surface;an RF power supply coupled to the target;a DC power supply coupled to the target;a substrate support having a substrate receiving surface; and{'sub': 1', '2', '1', '2, 'a center feed that is electrically coupled to the target, wherein the center feed includes a length (A), an inner diameter (D), and an outer diameter (D), wherein a surface area aspect ratio of the center feed is between about 0.001/mm and about 0.025/mm, wherein the surface area aspect ratio is calculated by A/(πDA+πDA).'}2. The plasma processing chamber of claim 1 , further comprising a magnetron disposed adjacent to the second surface of the target claim 1 , wherein the magnetron comprises:an outer pole comprising a plurality of magnets; andan inner pole comprising a plurality of magnets.3. The plasma ...

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Номер записи: 20

08-02-2018 дата публикации

SPUTTERING DEVICE

Номер: US20180037983A1

Автор: Akiba Masahiro, SETA Makoto, YAMAGUCHI Yoshihiro

Принадлежит: TOPCON CORPORATION

A sputtering device capable of satisfying various requirements is provided. The sputtering device includes a rotation and revolution table, multiple sputtering targets, an RF plasma source, and a load-lock chamber . The rotation and revolution table is arranged inside a pressure-reducible container and is rotatable by independent control. The multiple sputtering targets are arranged on a revolution orbit of the rotation and revolution table so as to correspond to multiple workpieces to be set on the rotation and revolution table. The RF plasma source performs plasma treatment. The load-lock chamber is used for setting the multiple workpieces on the rotation and revolution table. The rotation and revolution table is configured by arranging multiple rotation mounts on a revolution table , and the rotations of the revolution table and the multiple rotation mounts are independently controllable. 1. A sputtering device comprising:a rotation and revolution table positioned in a pressure-reducible container and rotatable by independent control;multiple sputtering targets placed on a revolution orbit of the rotation and revolution table so as to correspond to multiple workpieces to be set on the rotation and revolution table; anda load-lock chamber through which the multiple workpieces are to be set on the rotation and revolution table,wherein the rotation and revolution table is configured by arranging multiple rotation mounts on a revolution table, and the rotations of the revolution table and the multiple rotation mounts are independently controllable.2. The sputtering device according to claim 1 , wherein the multiple sputtering targets are configured to be used in respective film depositing atmospheres that are separated from each other in the pressure-reducible container.3. The sputtering device according to claim 1 , wherein the sputtering device performs sputtering while the rotation mounts rotate and the revolution table swings back and forth on the revolution ...

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Номер записи: 21

15-02-2018 дата публикации

APPARATUS AND METHOD FOR SPUTTERING HARD COATINGS

Номер: US20180044780A1

Автор: Abraham Bassam Hanna, Chistyakov Roman

Принадлежит: ZOND, LLC

A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma. 113-. (canceled)14. A pulsed arc power supply comprising:a voltage source that generates a voltage at an output;an energy storage device that is electrically connected to the voltage source, the voltage source charging the energy storage device to store an energy;a switching device that is electrically connected to energy storage device, the switching device releasing the energy stored in the energy storage device when activated in the form of micro pulses;a transformer comprising a primary coil that is electrically coupled to the switching device and a secondary coil, the primary coil receiving the energy stored in the energy storage device when the switch is activated and transforming the received energy to the secondary coil in order to generate voltage oscillation where the micro pulses correspond to the voltage oscillation;a driving circuit that is electrically connected to the diodes, the driving circuit forming the shape of the voltage oscillations; andthe voltage oscillations generate and sustain arc discharge on the cathode.15. The pulsed arc power supply of claim 14 , including arc control circuit including an arc detection means that detects the onset of an arc discharge.16. The pulsed arc power supply of claim 15 , wherein the arc detection means sends a signal to a control device that deactivates drivers for the switching device for a period of time claim 15 , thereby reducing the ...

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Номер записи: 22

06-02-2020 дата публикации

SUBSTRATE SIDE-DEPOSITION APPARATUS

Номер: US20200043696A1

Автор: SONG Kun Ho

Принадлежит: TETOS Co., Ltd.

A substrate side-deposition apparatus includes a substrate mounting drum rotatable within a chamber and allowing at least one substrate to be inserted and mounted in a direction from a circumferential surface toward a center; and at least one source target configured to deposit wiring based on sputtering to a lateral side portion of the substrate exposed protruding from the circumferential surface of the substrate mounting drum. 1. A substrate side-deposition apparatus including a substrate mounting drum rotatable within a chamber and allowing at least one substrate to be inserted and mounted in a direction from a circumferential surface toward a center; and at least one source target configured to deposit wiring based on sputtering to a lateral side portion of the substrate exposed protruding from the circumferential surface of the substrate mounting drum ,wherein:the substrate side portion includes a lateral side of the substrate, and top and bottom sides of the substrate adjacent to the lateral side, and the wiring on the substrate side portion is formed to electrically connect a top circuit pattern formed on the top side of the substrate and a bottom circuit pattern formed on the bottom side of the substrate,the substrate is inserted in and mounted to a substrate mounting slot radially mounted to the substrate mounting drum, andthe source target includes a plurality of source targets, and the plurality of source targets includes same metal targets or different metal targets.2. The substrate side-deposition apparatus according to claim 1 , further including a target shutter configured to cover the surfaces of other source targets adjacent to a source target performing the sputtering when the plurality of source targets includes the different metal targets. This application claims priority from Korean Patent Application No. 10-2018-0090615, filed on Aug. 3, 2018 in the Korean Intellectual PropertyOffice, the disclosure of which is incorporated herein by reference. ...

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Номер записи: 23

06-02-2020 дата публикации

FILM FORMING APPARATUS AND FILM FORMING METHOD

Номер: US20200043711A1

Автор: HIRASAWA Tatsuo, IWASHITA Hiroyuki, TOSHIMA Hiroyuki

Принадлежит:

A film forming apparatus for forming a film by reactive sputtering includes a processing chamber, a sputter mechanism, a sputtered particle shielding member, a reaction chamber, a substrate support, a substrate moving mechanism, a sputtered particle passage hole, and a reactive gas introducing unit. While moving a substrate by the substrate moving mechanism, sputtered particles, that are released to the discharge space by the sputter mechanism and pass through the sputtered particle passage hole to be injected to the reaction chamber, are reacted with a reactive gas introduced into the reaction chamber, and a reactive sputtering film generated by the reaction is formed on the substrate. 1. A film forming apparatus comprising:a processing chamber in which a film forming process is performed on a substrate;a sputter configured to release sputtered particles from a target in the processing chamber;a sputtered particle shield configured to shield a discharge space to which the sputtered particles released by the sputter are released;a reaction chamber provided separately from the discharge space in the processing chamber;a substrate support configured to support the substrate in the reaction chamber;a substrate mover configured to move the substrate supported by the substrate support;a sputtered particle passage hole provided in the sputtered particle shield, having an area smaller than that of the substrate, and configured to pass the sputtered particles toward the substrate in the reaction chamber; anda reactive gas introducing port configured to introduce a reactive gas into the reaction chamber,wherein, the sputtered particles are released to the discharge space by the sputter while moving the substrate by the substrate mover, ejected into the reaction chamber through the sputtered particle passage hole, and reacted with the reactive gas introduced into the reaction chamber, thereby forming a reactive sputtering film on the substrate.2. The film forming apparatus ...

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Номер записи: 24

18-02-2021 дата публикации

METHODS AND APPARATUS FOR PHYSICAL VAPOR DEPOSITION (PVD) DIELECTRIC DEPOSITION

Номер: US20210050195A1

Автор: FRUCHTERMAN William, RAMALINGAM Jothilingam

Принадлежит:

Methods and apparatus for reducing burn-in time of a physical vapor deposition shield, including: sputtering a dielectric target having a first dielectric constant to form a dielectric layer upon an inner surface of a shield, wherein the shield includes an aluminum oxide coating having a second dielectric constant in an amount sufficient to reduce the burn-in time, and wherein the first dielectric constant and second dielectric constant are substantially similar. 1. A method for reducing burn-in time of a physical vapor deposition shield , comprising:sputtering a dielectric target having a first dielectric constant to form a dielectric layer upon an inner surface of a shield, wherein the shield comprises an aluminum oxide coating having a second dielectric constant in an amount sufficient to reduce the burn-in time, and wherein the first dielectric constant and second dielectric constant are substantially similar.2. The method of claim 1 , wherein the inner surface of the shield is aluminum.3. The method of claim 1 , wherein the shield comprises aluminum.4. The method of claim 1 , wherein the aluminum oxide coating has a thickness of about 100 micrometers to about 200 micrometers.5. The method of wherein the aluminum oxide coating has a porosity of less than 4%.6. The method of claim 1 , wherein the aluminum oxide coating has a surface RA of about 300 to 450 microinches (pin).7. The method of claim 1 , wherein the first dielectric constant is between 10 and 12.8. The method of claim 1 , further comprising positioning the shield within a physical vapor deposition chamber comprising a target having a second dielectric constant claim 1 , wherein the first dielectric constant and second dielectric constant are within a range of ±2.9. The method of claim 1 , wherein the dielectric target comprises a dielectric material comprising one or more of germanium (Ge) claim 1 , arsenic (As) claim 1 , selenium (Se) claim 1 , and combinations thereof.10. The method of claim 1 , ...

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Номер записи: 25

18-02-2021 дата публикации

Heat-Transfer Roller for Sputtering and Method of Making the Same

Номер: US20210050196A1

Автор: Hiroshi Iwata, Ippei Sato, Keiichi Hashimoto, Naonori SHIBATA, Naoya Okada, Toshiyuki NEDU, Yuta TAKAKUWA

Принадлежит: Keihin Ramtech Co Ltd

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

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Номер записи: 26

03-03-2022 дата публикации

SYSTEMS AND METHODS FOR AN IMPROVED MAGNETRON ELECTROMAGNETIC ASSEMBLY

Номер: US20220068620A1

Автор: Choudhary Nitin, Correra Michael S., Forgey Christian K., Lariviere Marc-Andre, LI CHAO, Rios Reyes Juan M., Senseman William W., Trang Brendan V.

Принадлежит: OEM Group, LLC

The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.

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Номер записи: 27

14-02-2019 дата публикации

PROCESSING APPARATUS AND COLLIMATOR

Номер: US20190051503A1

Автор: KATO Shiguma, TANAKA Masayuki, TERADA Takahiro

Принадлежит: KABUSHIKI KAISHA TOSHIBA

According to an embodiment, a processing apparatus includes a generator mount, a first-object mount, and a first collimator. A particle generator capable of emitting particles is placed on the generator mount. A first object is placed on the first-object mount. The first collimator is placed between the generator mount and the first-object mount, and has first walls and second walls. In the first collimator, the first walls and the second walls form first through holes extending in a first direction from the generator mount to the first-object mount. Each of the second walls is provided with at least one first passage. 1. A processing apparatus comprising:a generator mount on which a particle generator is placed, the particle generator capable of emitting particles;a first-object mount spaced apart from the generator mount, on which a first object is placed, the first object that receives the particles; and the first walls and the second walls form first through holes extending in a first direction from the generator mount to the first object mount, and', 'each of the second walls is provided with at least one first passage which penetrates the second wall and through which the particles can pass, wherein, 'a first collimator placed between the generator mount and the first-object mount, including first walls and second walls, in which'}the first walls and the second walls increase in thickness from one end to the other end, the one end facing the generator mount, the other end facing the first-object mount.2. The processing apparatus according to claim 1 , wherein in a region of the collimator configured to face the particle generator claim 1 , a larger number of the second walls are arranged than that of the first walls claim 1 , andin a region of the collimator offset from the particle generator, a larger number of the first walls are arranged than that of the second walls.3. The processing apparatus according to claim 1 , whereinthe collimator includes a first ...

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Номер записи: 28

14-02-2019 дата публикации

SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY MANUFACTURING APPARATUS

Номер: US20190051700A1

Автор: Kim Jae Hoon

Принадлежит:

A first memory device includes a first magnetoresistive cell having a plurality of deposition layers. A second memory device includes a second magnetoresistive cell having a plurality of deposition layers. Each of the plurality of deposition layers of the second magnetoresistive cell corresponds to one of the plurality of deposition layers of the first magnetoresistive cell. One of the plurality of deposition layers of the second magnetoresistive cell is thinner than a corresponding deposition layer of the plurality of deposition layers of the first magnetoresistive cell. 1. A semiconductor memory device , comprising:a first memory device including a first magnetoresistive cell having a plurality of deposition layers; anda second memory device including a second magnetoresistive cell having a plurality of deposition layers,wherein each of the plurality of deposition layers of the second magnetoresistive cell corresponds to one of the plurality of deposition layers of the first magnetoresistive cell, andwherein one of the plurality of deposition layers of the second magnetoresistive cell is thinner than a corresponding deposition layer of the plurality of deposition layers of the first magnetoresistive cell.2. The semiconductor memory device of claim 1 , further comprising:a lower insulating layer disposed on a substrate;a first lower contact plug and a second lower contact plug vertically passing through the lower insulating layer to be in contact with an upper surface of the substrate,wherein the first memory device is electrically connected to the first lower contact plug, andwherein the second memory device is electrically connected to the second lower contact plug;an upper insulating layer disposed on the lower insulating layer to cover the first memory device and the second memory device;an upper contact plug vertically passing through the upper insulating layer to be electrically connected to the first memory device or the second memory device; anda switching ...

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Номер записи: 29

13-02-2020 дата публикации

FILM-FORMING APPARATUS, FILM-FORMING SYSTEM, AND FILM-FORMING METHOD

Номер: US20200051796A1

Автор: SHINADA Masato, TOSHIMA Hiroyuki

Принадлежит:

A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly. 1. A film-forming apparatus comprising:a processing chamber defining a processing space in which a film-forming process is performed on a substrate;a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space;a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass;a substrate support configured to support the substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space;a substrate moving mechanism configured to linearly move the substrate supported on the substrate support; anda controller configured to control the first sputter-particle emitter, ...

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Номер записи: 30

13-02-2020 дата публикации

Multicathode Deposition System

Номер: US20200051797A1

Автор: Bhat Sanjay, Jindal Vibhu, Manoharan Kamatchigobinath

Принадлежит:

A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising one or more of contours that reduce particle defects, temperature control and or measurement and and/or voltage particle traps to reduce processing defects. 1. A physical vapor deposition (PVD) chamber comprising:a plurality of cathode assemblies;an upper shield below the plurality of cathode assemblies having a shield hole to expose one of the plurality of cathode assemblies; anda lower shield below the upper shield, the lower shield having an upper end in contact with the upper shield, a lower end opposite the upper end, and a lower shield wall comprising a height “H” extending from the upper end to the lower end and a lower shield wall inner surface, wherein the lower shield wall inner surface has a straight region extending from the upper end to about 0.8H wherein the straight region is free of bends on the lower shield wall inner surface having an angle in a range of from about 0.1 degrees and about 120 degrees and in a range of from about 210 degrees and about 360 degrees.2. The PVD chamber of claim 1 , wherein the lower shield is surrounded by a modular chamber body comprising at least two body portions.3. The PVD chamber of claim 2 , wherein the at least two body portions comprise a intermediate chamber body and a lower chamber body claim 2 , the intermediate chamber body disposed above the lower chamber body.4. The PVD chamber of claim 3 , further comprising a top adapter disposed above the intermediate chamber body and surrounding the upper shield and a lower shield liner disposed between a) one or more of the intermediate chamber body and the lower chamber body and b) the lower shield.5. The PVD chamber of claim 1 , further comprising a heating element adjacent to the lower shield.6. The PVD chamber of claim 5 , further comprising a plurality of heating elements.7. The PVD chamber of claim 6 , ...

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Номер записи: 31

13-02-2020 дата публикации

COLLIMATOR FOR SELECTIVE PVD WITHOUT SCANNING

Номер: US20200051798A1

Автор: LEE JOUNG JOO, MEBARKI BENCHERKI, TANG XIANMIN

Принадлежит:

Collimator assemblies and process chambers for processing substrates including collimator assemblies are provided herein. In some embodiments, a collimator assembly may include a first cylindrical divider, a second cylindrical divider nested entirely within the first cylindrical divider, and a third cylindrical divider nested entirely within the second cylindrical divider, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. In some embodiments, a process chamber for processing substrates may include a magnetron source, a target supported by a target backing plate cathode disposed below the magnetron source, and a collimator assembly having a plurality of nested cylindrical dividers, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. 1. A collimator assembly , comprising:a first cylindrical divider; anda second cylindrical divider nested within the first cylindrical divider; anda third cylindrical divider nested within the second cylindrical divider,wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant.2. The collimator assembly of claim 1 , wherein the first claim 1 , second and third cylindrical dividers are not concentric and do not have the same central axis.3. The collimator assembly of claim 1 , wherein each of the first claim 1 , second and third cylindrical dividers has a first open end and an opposing second open end claim 1 , and wherein the second open end is angled with respect to the first open end such that a height of a wall of each cylindrical divider varies about its diameter.4. The collimator assembly of claim 1 , wherein each of the first claim 1 , second and third cylindrical dividers include a top opening and a bottom opening.5. The collimator assembly of claim 1 , ...

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Номер записи: 32

10-03-2022 дата публикации

SEMICONDUCTOR MANUFACTURING APPARATUS AND EARTH SHIELD

Номер: US20220076934A1

Автор: Hatazaki Akitsugu, Izumi Takashi

Принадлежит: Kioxia Corporation

A semiconductor manufacturing apparatus according to an embodiment includes a stage, a backing plate and an earth shield. The stage is configured to hold a substrate that a film is to be deposited on. The backing plate faces the stage and is configured such that a target containing a film deposition material is to be joined. The earth shield has an opening configured to enclose the target, and a plurality of through holes provided over a whole circumference of a circumferential part of the opening. 1. A semiconductor manufacturing apparatus comprising:a stage configured to hold a substrate that a film is to be deposited on;a backing plate facing the stage and configured such that a target containing a film deposition material is to be joined; andan earth shield having an opening configured to enclose the target, and a plurality of through holes provided over a whole circumference of a circumferential part of the opening.2. The semiconductor manufacturing apparatus according to claim 1 , wherein the plurality of through holes extend in a direction perpendicular to a bottom surface of the earth shield.3. The semiconductor manufacturing apparatus according to claim 1 , wherein the plurality of through holes extend in an oblique direction to a bottom surface of the earth shield.4. The semiconductor manufacturing apparatus according to claim 1 , wherein an aperture diameter of the plurality of through holes is larger than a distance between the target and the opening.5. The semiconductor manufacturing apparatus according to claim 3 , wherein the plurality of through holes bend to the target side.6. An earth shield comprising:an opening configured to enclose a target containing a film deposition material; anda plurality of through holes provided over a whole circumference of a circumferential part of the opening.7. The earth shield according to claim 6 , wherein the plurality of through holes extend in a direction perpendicular to a bottom surface of the earth shield.8. ...

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Номер записи: 33

08-03-2018 дата публикации

Processing device and collimator

Номер: US20180067330A1

Автор: Masakatsu Takeuchi, Shiguma KATO, Takahiro Terada, Yasuhiro Aoyama, Yoshinori Tokuda

Принадлежит: Toshiba Corp

According to one embodiment, a processing device comprises a substance arrangement part, a generating source arrangement part, and a collimator. A substance is arranged on the substance arrangement part. The generating source arrangement part is arranged at a position separated away from the substance arrangement part. A particle generating source that is able to emit a particle to the substance is arranged on the generating source arrangement part. The collimator is configured to be arranged between the substance arrangement part and the generating source arrangement part. The collimator includes: a frame; and a first rectifying part that includes a plurality of first walls and a plurality of first through holes formed with the first walls and extending in a first direction from the generating source arrangement part toward the substance arrangement part, the collimator configured to be removably attached to the frame.

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Номер записи: 34

11-03-2021 дата публикации

METHODS AND APPARATUS FOR CONTROLLING ION FRACTION IN PHYSICAL VAPOR DEPOSITION PROCESSES

Номер: US20210071294A1

Автор: ALLEN ADOLPH MILLER, FRUCHTERMAN William, LEE JOUNG JOO, Miller Keith A., Riker Martin Lee, TANG XIANMIN, Wang Rongjun, Wang Xiaodong, Zhang Fuhong, Zhang Shouyin

Принадлежит:

Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support. 1. A physical vapor deposition chamber , comprising:a body having an interior volume and a lid assembly including a target to be sputtered;a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber;a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate;a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness;a first power source coupled to the target to electrically bias the target; anda second power source coupled to the substrate support to electrically bias the substrate support.2. The physical vapor deposition chamber of claim 1 , wherein the central region of the collimator has a diameter equal to or greater than a diameter of a substrate to be supported.3. The physical vapor ...

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Номер записи: 35

10-03-2016 дата публикации

DEPOSITION DEVICE

Номер: US20160071699A1

Автор: KUROKAWA Yoshinori, Ohba Naoki, SEGAWA Toshiki

Принадлежит: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

Provided is a deposition device which can secure work space without vertical overlap of the deposition unit and the units upstream and downstream thereof. This deposition device is provided with a deposition unit (), and upstream and downstream units () arranged to the left and right thereof. The deposition unit () is provided with: a deposition roller (); multiple guide rollers (); a main chamber () having a deposition roller housing unit () and, thereabove, a guide roller housing unit (); first and second process chambers () which house multiple deposition process devices () to the left and right of the deposition roller housing unit (); and process chamber support units () for supporting the first and second process chambers () so as to allow the first and second process chambers () to move between a regular position for deposition and a retracted position retracted to the left or right, and between the retracted position and an exposure position separated in the front/back direction. 1. A deposition device performing deposition on a surface of a belt-shaped film substrate while conveying the film substrate in the longitudinal direction thereof , comprising:a deposition unit, an upstream unit arranged on the upstream side in the conveying direction of the film substrate than the deposition unit, and a downstream unit arranged on the downstream side in the conveying direction of the film substrate than the deposition unit, whereinthe deposition unit has a deposition roller rotatable around a horizontal rotation center axis, a plurality of deposition process devices arranged around the deposition roller, a plurality of guide rollers arranged so as to guide the film substrate between the upstream and downstream units and the deposition roller, a main chamber having a deposition roller housing unit which houses the deposition roller and a guide roller housing unit which is located on the upper side thereof and houses at least a part of the guide rollers, first and ...

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Номер записи: 36

10-03-2016 дата публикации

METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE USING AN ENERGETIC PARTICLE BEAM

Номер: US20160071708A1

Автор: Druz Boris L., Fremgen Roger P., Hayes Alan V., Kanarov Viktor, Krause Robert, Reiss Ira, Sferlazzo Piero

Принадлежит: VEECO INSTRUMENTS, INC.

Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam. 1. A system for processing a substrate with an energetic particle beam , the system comprising:a source configured to emit the energetic particle beam, said source having a major dimension, and said source configured to distribute the beam with a substantially uniform flux distribution across at least a portion of said major dimension;a vacuum chamber containing said source and including a treatment zone across which the beam impinges the substrate; anda fixture disposed inside said vacuum chamber at a position spaced from said source, said fixture includes a first stage configured to hold the substrate and a second stage adapted to translate said first stage relative to said source, said first stage configured to index the substrate about an azimuthal axis to different angular orientations, and said second stage capable of translating the substrate through said treatment zone with each of said different angular orientations and to a parking area outside of said treatment zone in which said first stage is used to index the substrate.2. The system of wherein said second stage is adapted to translate the substrate linearly relative to said major dimension of said source within said treatment zone.3. The system of wherein said second stage is adapted to translate the substrate in an arc having a radius of curvature such that a direction of movement within said treatment zone is substantially perpendicular to said major dimension of said source.4. The system of wherein said source is adapted to move relative to the substrate in an arc ...

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Номер записи: 37

27-02-2020 дата публикации

FILM FORMING DEVICE AND METHOD OF FORMING PIEZOELECTRIC FILM

Номер: US20200066494A1

Автор: Murakami Naoki, Takahashi Shuji

Принадлежит:

A film forming device includes an adhesion preventing mechanism in a film formation chamber, in which the adhesion preventing mechanism is configured with a plurality of adhesion preventing plates including at least a substrate edge adhesion preventing plate that is provided on an edge of a region on the substrate holding portion where the substrate is provided and a substrate outer peripheral region adhesion preventing plate that is disposed on an outer periphery of the substrate edge adhesion preventing plate to be spaced from the substrate edge adhesion preventing plate, a potential adjusting mechanism that is electrically connected to any one of the substrate edge adhesion preventing plate or the substrate outer peripheral region adhesion preventing plate is provided, and the adhesion preventing plate connected to the potential adjusting mechanism and an adhesion preventing plate disposed adjacent thereto are disposed at an interval of 0.5 mm to 3.0 mm. 1. A film forming device that forms a thin film on a substrate by sputtering a target , the film forming device comprising:a film formation chamber that is capable of introducing or discharging film forming gas;a target holding portion that holds the target disposed in the film formation chamber;a substrate holding portion that is disposed to face the target holding portion in the film formation chamber and holds a substrate; anda radio frequency sputtering power supply that generates plasma in a space between the target holding portion and the substrate holding portion,wherein an adhesion preventing mechanism that prevents a target material from adhering to an inner wall surface of the film formation chamber, the target material being sputtered and scattered from the target in the film formation chamber,the adhesion preventing mechanism is configured with a plurality of adhesion preventing plates including at least a substrate edge adhesion preventing plate that is provided on an edge of a region on the ...

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Номер записи: 38

19-03-2015 дата публикации

Extended dark space shield

Номер: US20150075980A1

Автор: Muhammad M. Rasheed, Rongjun Wang, Thanh Nguyen, Xianmin Tang

Принадлежит: Applied Materials Inc

Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 2:1 to about 1.6:1.

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Номер записи: 39

19-03-2015 дата публикации

Rotating magnetron sputtering target and corresponding magnetron sputtering device

Номер: US20150075981A1

Автор: Hao Kuo

Принадлежит: Shenzhen China Star Optoelectronics Technology Co Ltd

The present invention relates to a rotating magnetron sputtering target and a corresponding magnetron sputtering device. The rotating magnetron sputtering target comprises a cylindrical target, a pole shoe and a plurality of magnetrons. The magnetron comprises a first magnetic pole arranged on a central portion thereof and two second magnetic poles arranged on both sides thereof, and the first and the second magnetic poles have opposite polarities. The rotating magnetron sputtering target and the corresponding magnetron sputtering device of the present invention improve the plasma density within a coating region, so that it forms a film with better quality and better uniformity.

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Номер записи: 40

07-03-2019 дата публикации

FILM FORMATION APPARATUS

Номер: US20190074167A1

Автор: Kambe Yu, ONO Daisuke

Принадлежит:

A film formation apparatus includes a chamber which has an interior capable of being vacuumed, and which includes a lid that is openable and closable on the upper part of the chamber, a rotation table which is provided in the chamber and which and carries a workpiece in the circular trajectory, a film formation unit that deposits film formation materials by sputtering on the workpiece carried by the rotation table to form films, a shielding member which is provided with an opening at the side which the workpiece passes through, and which forms a film formation room where the film formations by the film formation units are performed, and a support which supports the shielding member, and which is independent relative to the chamber and is independent from the lid. 1. A film formation apparatus comprising:a chamber which has an interior capable of being vacuumed, and which comprises a lid that is openable and closable on an upper part of the chamber;a carrying unit which is provided in the chamber and which carries a workpiece in a circular trajectory;a film formation unit that deposit a film formation material by sputtering on the workpiece carried by the carrying unit to form a film;a shielding member which is provided with an opening at a side which the workpiece W passes through, and which forms a film formation room where the film formation by the film formation unit is performed; anda support which supports the shielding member, and which is immovable relative to the chamber and independent from the lid.2. The film formation apparatus according to claim 1 , wherein the support comprises:an outer-circumference support that supports the shielding member at an outer circumference side of the rotation of the carrying unit; andan inner-circumference support that supports the shielding member at an inner circumference side of the rotation of the carrying unit.3. The film formation apparatus according to claim 1 , further comprising a first vibration absorber provided ...

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Номер записи: 41

16-03-2017 дата публикации

ONE-PIECE PROCESS KIT SHIELD FOR REDUCING THE IMPACT OF AN ELECTRIC FIELD NEAR THE SUBSTRATE

Номер: US20170076924A1

Автор: JOHANSON William, SAVANDAIAH Kirankumar

Принадлежит:

Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield configured for use in a processing chamber for processing a substrate having a given diameter includes: a cylindrical body having an upper portion and a lower portion; an annular heat transfer channel disposed within the upper portion; and a cover ring section extending radially inward from the lower portion and having an annular leg extending from a bottom surface of the cover ring section, wherein the annular leg is configured to interface with a deposition ring to form a tortuous path between the bottom surface and the deposition ring. 1. A one-piece process kit shield configured for use in a processing chamber for processing a substrate having a given diameter , comprising:a cylindrical body having an upper portion and a lower portion;an annular heat transfer channel disposed within the upper portion; anda cover ring section extending radially inward from the lower portion and having an annular leg extending from a bottom surface of the cover ring section, wherein the annular leg is configured to interface with a deposition ring to form a tortuous path between the bottom surface and the deposition ring.2. The one-piece process kit shield of claim 1 , wherein the upper portion comprises:an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an interior volume of the chamber when the one-piece process kit shield is placed in the chamber,wherein the annular heat transfer channel is disposed in the adapter section.312. The one-piece process kit shield of claim 1 , wherein the cover ring section includes a radially inwardly extending lip having an inner diameter greater than the given diameter by about inch to about inches.4. The one-piece process kit shield of claim 1 , ...

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Номер записи: 42

18-03-2021 дата публикации

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

Номер: US20210082674A1

Автор: IWATA Hiroshi

Принадлежит:

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. 1. A shared-target sputtering cathode assembly , comprising:a left long-side portion, a right long-side portion, and a central long-side portion, with each long-side portion comprising a hollow cylindrical sputtering target supported by a shaft for rotation about a longitudinal central axis thereof, with the long-side portions being arranged parallel to each other and with the left long-side portion opposing the central long-side portion across a left interior region of the sputtering cathode assembly and the right long-side portion opposing the central long-side portion across a right interior region of the sputtering cathode assembly;a first pair of short-side portions, with each of the first pair of short-side portions extending between the left long-side portion and the central long-side portion near respective ends thereof and being arranged perpendicularly to the left and central long-side portions and opposing each other across the left interior region of the sputtering cathode assembly, the first pair of short-side portions each having a rectangular cross-section taken at a lengthwise central portion thereof;a second pair of short-side portions, with each of the second pair of short-side portions extending between the right long-side portion and the central long-side portion near respective ends thereof and being ...

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Номер записи: 43

18-03-2021 дата публикации

SPUTTERING METHOD AND SPUTTERING APPARATUS

Номер: US20210082675A1

Автор: FUJIHARA Tomoyuki, GOMI Atsushi, HATANO Tatsuo, MOTOMURA Yuuki, ONO Kazunaga, OTAGIRI Yasuhiro

Принадлежит:

A sputtering method including: performing a pre-sputtering by emitting sputter particles from a target provided in a sputtering apparatus in a state where the target is shielded by a shielding portion of a shutter provided closed to the target to be capable of opening/closing the target; and, after the pre-sputtering, performing a main-sputtering by emitting the sputter particles from the target in a state where an opening of the shutter is aligned with the target thereby depositing the sputter particles on a substrate. When the pre-sputtering and the main-sputtering are repeatedly performed, a shutter position is changed during the pre-sputtering so as to change a position of the shielding portion aligned with the target. 1. A sputtering method comprising:performing a pre-sputtering by emitting sputter particles from a target provided in a sputtering apparatus in a state where the target is shielded by a shielding portion of a shutter provided close to the target to be capable of opening/closing the target; andafter the pre-sputtering, performing a main-sputtering by emitting the sputter particles from the target in a state where an opening of the shutter is aligned with the target thereby depositing the sputter particles on a substrate,wherein, when the pre-sputtering and the main-sputtering are repeatedly performed, a shutter position is changed during the pre-sputtering so as to change a position of the shielding portion aligned with the target.2. The sputtering method according to claim 1 , wherein claim 1 , during the pre-sputtering claim 1 , the shutter is swung to change the shutter position so as to change the position of the shielding portion aligned with the target.3. The sputtering method according to claim 1 , wherein a plurality of shutter positions is set claim 1 , and a shutter position is selected from the plurality of shutter positions when the pre-sputtering is performed.4. The sputtering method according to claim 3 , wherein the number of the ...

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Номер записи: 44

24-03-2016 дата публикации

Method of manufacturing semiconductor device and sputtering apparatus

Номер: US20160086779A1

Автор: Hideaki Tsugane, Hidenori Suzuki, Takashi HAMAYA

Принадлежит: Renesas Electronics Corp

Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.

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Номер записи: 45

07-04-2016 дата публикации

Rectangular Hollow Sputter Source and Method of use Thereof

Номер: US20160099135A1

Автор: Belan Robert M., III Kurt John, Lesker

Принадлежит:

A rectangular hollow sputtering source includes a box-shaped cathode including therethrough an aperture that is open at a first side and a second side of the box-shaped cathode. A cooling block surrounds the box-shaped cathode and a number of magnets are disposed in the cooling block around the aperture. An electrical insulating part surrounds and electrically isolates the cooling block, the bar magnets, and the cathode from an anode which surrounds the exterior of the electrical insulating part. 1. A rectangular hollow sputtering source comprising:a box-shaped cathode including therethrough an aperture that is open at a first side and a second side of the box-shaped cathode;a cooling block surrounding the box-shaped cathode;a plurality of magnets in the cooling block around the aperture;an anode; andan electrical insulating part surrounding and electrically isolating the cooling block, the bar magnets, and the cathode from the anode which surrounds the exterior of the electrical insulating part.2. The rectangular hollow sputtering source of claim 1 , wherein the cathode is comprised of a plurality of target segments coupled to the cooling block.3. The rectangular hollow sputtering source of claim 1 , further including a flange configured for positioning the rectangular hollow sputter source inside of an enclosure claim 1 , in spaced relation to the enclosure.4. The rectangular hollow sputtering source of claim 1 , wherein the cooling block includes a cooling line configured to receive a cooling fluid.5. A sputtering method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(a) providing the rectangular hollow sputtering source of inside of a vacuum enclosure;'}(b) positioning a first substrate on the first side of the aperture; and(c) generating a plasma that causes atoms to be sputtered from the cathode onto a side of the first substrate that faces the aperture.6. The sputtering method of claim 5 , further including claim 5 , prior to step (c) claim 5 , ...

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Номер записи: 46

12-05-2022 дата публикации

SPUTTERING APPARATUS

Номер: US20220145445A1

Автор: Nagashima Hideto, Suzuki Koji, Tashiro Yukihito

Принадлежит: ULVAC, INC.

Provided is a sputtering apparatus which is capable of suppressing a local temperature rise at an outer peripheral part of a to-be-processed substrate. The sputtering apparatus SM has: a vacuum chamber [[ in which a target [[ and the to-be-processed substrate Sw are disposed face-to-face with each other; a shield plate [[ for enclosing a film forming space [[]] between the target and the to-be-processed substrate; and a cooling unit for cooling the shield plate. The shield plate [[ has a first shield plate part [[]] which is disposed around the to-be-processed substrate and which has a first opening [[ equivalent in contour to the to-be-processed substrate. The cooling unit includes a first coolant passage [[ which is disposed in the first shield plate part and which has a passage portion [[]] extending all the way to the first shield plate part positioned around the first opening. 1. A sputtering apparatus comprising;a vacuum chamber having disposed therein a target and a to-be-processed substrate face-to-face with each other;a shield plate for enclosing, inside the vacuum chamber, a film forming space between the target and the to-be-processed substrate;a cooling unit for cooling the shield plate,wherein the shield plate comprises; a first shield plate part which is disposed around the to-be-processed substrate and which has a first opening equivalent in contour to the to-be-processed substrate so as to allow the to-be-processed substrate to face the film forming space, andwherein the cooling unit comprises a first coolant passage which is disposed in the first shield plate part and which has a passage portion extending all the way to the first shield plate part positioned around the first opening.2. The sputtering apparatus according to claim 1 , wherein the shield plate has a second shield plate part which is disposed around the target and which has a second opening equivalent in contour to the target so as to allow the target to face the film forming space ...

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Номер записи: 47

06-04-2017 дата публикации

Integrated process kit for a substrate processing chamber

Номер: US20170098530A1

Автор: Kirankumar Savandaiah, Prashant Prabhu, William Johanson, XIN Wang

Принадлежит: Applied Materials Inc, Applied Materials Singapore Technology Pte Ltd

Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes: a one-piece process kit shield having a cylindrical body having an upper portion and a lower portion; an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an inner volume of the chamber when the one-piece process kit shield is placed in the chamber; a heat transfer channel extending through the adapter section; and a protruding section extending radially inward from the lower portion; a resting bracket having an upper portion coupled to the adapter section and a lower portion extending radially inward; a cover ring disposed beneath the protruding section; and a deposition ring disposed beneath the cover ring.

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Номер записи: 48

30-04-2015 дата публикации

BIPOLAR COLLIMATOR UTILIZED IN A PHYSICAL VAPOR DEPOSITION CHAMBER

Номер: US20150114823A1

Автор: Kothnur Prashanth, LEE JOUNG JOO, Liu Guojun, WANG Wei W.

Принадлежит:

The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator. 1. An apparatus comprising:a chamber body and a chamber lid disposed on the chamber body defining a processing region therein;a collimator disposed in the processing region; anda power source coupled to the collimator.2. The apparatus of claim 1 , wherein the power source is a DC power source.3. The apparatus of claim 1 , wherein the power source is a polar power supply.4. The apparatus of claim 1 , wherein the power source is a bipolar pulsed DC power source.5. The apparatus of claim 1 , wherein the collimator comprises having a plurality of apertures extending therethrough claim 1 , wherein the apertures located at a center ration having an aspect ratio different from the apertures located at a periphery region of the collimator.6. The apparatus of claim 1 , wherein the collimator is configured in bipolar mode.7. The apparatus of claim 1 , further comprising:a target disposed under the chamber lid.8. The apparatus of claim 7 , wherein the target is fabricated from at least one of Al claim 7 , Ti claim 7 , Ta claim 7 , W claim 7 , Cr claim 7 , Ni claim 7 , Cu claim 7 , Co claim 7 , alloys thereof claim 7 , or combinations thereof.9. The apparatus of claim 7 , wherein the target is fabricated from copper.10. The apparatus of claim 1 , further comprising:a first magnet disposed around the chamber body above the collimator.11. The apparatus of claim 10 , further comprising:a second magnet disposed around the chamber body below the collimator.12. The apparatus of claim 11 , further comprising:a magnetron assembly disposed above the chamber lid.13. The apparatus of claim 1 , further ...

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Номер записи: 49

10-07-2014 дата публикации

Wafer processing deposition shielding components

Номер: US20140190822A1

Автор: Anantha K. Subramani, Keith A. Miller, Martin Lee Riker

Принадлежит: Applied Materials Inc

Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

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Номер записи: 50

19-04-2018 дата публикации

RATE ENHANCED PULSED DC SPUTTERING SYSTEM

Номер: US20180108520A1

Автор: Pelleymounter Doug

Принадлежит:

A sputtering system and method are disclosed. The system includes a first power source that is configured to apply a first voltage at a first electrode that alternates between positive and negative relative to a second electrode during each of multiple cycles. A second power source is coupled to a third electrode and the second electrode, and the second power source is configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second electrode during another portion of each cycle. 1. A pulsed sputtering system , comprising:a plasma chamber enclosing at least a first electrode, a second electrode, and a third electrode;a first power source coupled to the first electrode and the second electrode, the first power source configured to apply a first voltage at the first electrode that alternates between positive and negative relative to the second electrode during each of multiple cycles;a second power source coupled to the third electrode and the second electrode, the second power source configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles; anda controller configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second electrode during another portion of each cycle.2. The system of claim 1 , wherein each of ...

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Номер записи: 51

20-04-2017 дата публикации

DEPOSITION SYSTEM FOR GROWTH OF INCLINED C-AXIS PIEZOELECTRIC MATERIAL STRUCTURES

Номер: US20170110300A1

Автор: Belsick John, McCarron Kevin

Принадлежит:

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture. 1. A deposition system comprising:a linear sputtering apparatus comprising a target surface configured to eject metal atoms;a substrate table comprising a support surface that is configured to receive at least one wafer and is coupled to a translation element, wherein the translation element is configured to translate the substrate table and the at least one wafer during operation of the linear sputtering apparatus; anda collimator comprising a plurality of guide members defining a plurality of collimator apertures arranged between the linear sputtering apparatus and the substrate table;wherein the target surface is arranged non-parallel to the support surface; andwherein at least one of the substrate table or the collimator is electrically biased to a potential other than ground.2. The deposition system of claim 1 , wherein the plurality of guide members is arranged non-perpendicular to the support surface.3. The deposition system of claim 1 , wherein the substrate table is electrically biased to a potential other than ground.4. The deposition system of claim 1 , wherein the collimator is electrically biased to a potential other than ground.5. The deposition system of claim 1 , wherein the linear sputtering apparatus comprises a linear magnetron that includes a sputtering cathode operatively coupled to the target surface to promote ejection of metal atoms from the ...

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Номер записи: 52

20-04-2017 дата публикации

Sputtering Apparatuses and Methods of Manufacturing a Magnetic Memory Device Using the Same

Номер: US20170110301A1

Автор: KIM WOOJIN, Lee Joonmyoung

Принадлежит:

A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a horizontal position of a substrate during the sputtering process, and a first sputter gun provided to be vertically spaced apart from the substrate in the process chamber. The first sputter gun is spaced apart from the substrate by a first horizontal distance during the sputtering process. The first sputter gun is fixed during the sputtering process. The first horizontal distance is a horizontal distance between the substrate and the first sputter gun when viewed from a plan view. 1. A sputtering apparatus , comprising:a process chamber;a substrate holder within the process chamber and that is configured to fix a horizontal position of a substrate during a sputtering process; anda first sputter gun vertically spaced apart from the substrate in the process chamber,wherein the first sputter gun is horizontally spaced apart from the substrate by a first distance during the sputtering process,wherein the first sputter gun is fixed at a position during the sputtering process, and wherein the first distance is a distance between the substrate and the first sputter gun.2. The sputtering apparatus of claim 1 , further comprising:a second sputter gun vertically spaced apart from the substrate in the process chamber,wherein the second sputter gun is horizontally spaced apart from the substrate by a second distance during the sputtering process,wherein the second sputter gun is fixed at a position during the sputtering process, wherein the second sputter gun is horizontally spaced apart from the first sputter gun, andwherein the second distance is a distance between the substrate and the second sputter gun.3. The sputtering apparatus of claim 2 , wherein each of the first and second sputter guns is fixed at the position so as not to vertically overlap with the substrate during the sputtering process.4. The sputtering ...

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Номер записи: 53

20-04-2017 дата публикации

MULTI-STAGE DEPOSITION SYSTEM FOR GROWTH OF INCLINED C-AXIS PIEZOELECTRIC MATERIAL STRUCTURES

Номер: US20170111022A1

Автор: Belsick John, McCarron Kevin

Принадлежит:

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture. 1. A deposition system comprising:a first linear sputtering apparatus comprising a first target surface configured to eject metal atoms;a second linear sputtering apparatus comprising a second target surface configured to eject metal atoms;a substrate table comprising a support surface that is configured to receive at least one wafer and that is coupled to a translation element, wherein the translation element is configured to translate the substrate table and the at least one wafer between a first position proximate to the first linear sputtering apparatus and a second position proximate to the second linear sputtering apparatus; anda second collimator comprising a second plurality of guide members defining a second plurality of collimator apertures arranged between the second linear sputtering apparatus and the substrate table when the support surface is proximate to the second linear sputtering apparatus;wherein at least one of the first target surface or the second target surface is arranged non-parallel to the support surface.2. The deposition system of claim 1 , further comprising a first collimator comprising a first plurality of guide members defining a first plurality of collimator apertures arranged between the first linear sputtering apparatus and the substrate table when the support surface is proximate to the first linear sputtering apparatus.3. The ...

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Номер записи: 54

28-04-2016 дата публикации

WAVEFORM FOR IMPROVED ENERGY CONTROL OF SPUTTERED SPECIES

Номер: US20160118233A1

Автор: JR. Michael Wayne, Stowell

Принадлежит:

This disclosure describes systems and methods for regulating the density and kinetic energy of ions in a sputtering deposition chamber. A pulsed DC waveform with a modulated RF signal is generated and applied to the sputtering chamber. Upon termination of a cycle of the pulsed DC waveform, a reverse voltage spike is generated. This reverse voltage spike reverses the polarity of the cathode and anode of the sputtering chamber for some period of time. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. A controller may be employed to control the timing and duration of the application of the DC waveform, the timing and duration of the RF waveform, and the engagement of the reverse limiting circuit. 1. A method for controlling the rate of production and energy distribution of ions in a sputtering system , the method comprising: a plasma initiation portion;', 'a steady-state portion;', 'a reverse DC voltage portion, wherein the reverse DC voltage portion reverses the polarity of a cathode in a sputtering deposition chamber;', 'a reverse voltage threshold; and', 'a pulsed-DC termination point;, 'applying a first cycle of a pulsed-DC waveform to a cathode of a sputtering deposition chamber, wherein the cycle of the pulsed-DC waveform includes a frequency, and', 'an RF application duration., 'applying a first RF waveform to the cathode of the sputtering deposition chamber during at least the steady-state portion, wherein the RF waveform includes2. The method of claim 1 , wherein the reverse limiting threshold set at a voltage selected from the group consisting of +50V claim 1 , +60V claim 1 , +70V claim 1 , +80V claim 1 , +90V claim 1 , +100V claim 1 , +110V claim 1 , +120V claim 1 , +130V claim 1 , +140V claim 1 , +150V claim 1 , +160V claim 1 , +170V claim 1 , +180V claim 1 , +190V claim 1 , +200V claim 1 , +210V claim 1 , +220V claim 1 , +230V claim 1 , +240V claim 1 , +250V claim 1 , +260V ...

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Номер записи: 55

27-04-2017 дата публикации

Extreme Ultraviolet Lithography Mask Blank Manufacturing System And Method Of Operation Therefor

Номер: US20170115555A1

Автор: Cara Beasley, Majeed Foad, Ralf Hofmann

Принадлежит: Applied Materials Inc

A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.

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Номер записи: 56

27-04-2017 дата публикации

BIASABLE FLUX OPTIMIZER / COLLIMATOR FOR PVD SPUTTER CHAMBER

Номер: US20170117121A1

Автор: INFANTE Anthony, Riker Martin Lee, Wang Zheng, Zhang Fuhong

Принадлежит:

In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit. 1. A collimator , comprising: a first plurality of hexagonal apertures in a central region having a first aspect ratio;', 'a second plurality of hexagonal apertures in a peripheral region having a second aspect ratio less than the first aspect ratio; and', 'a third plurality of hexagonal apertures in a transitional region disposed between the central region and the peripheral region, wherein walls defining the third plurality of apertures of the transitional region form a conical shape surrounding the central region, and an upper portion of the walls include an entrance angle portion., 'a honeycomb structure having walls defining and separating hexagonal apertures, wherein the hexagonal apertures include2. The collimator of claim 1 , wherein the entrance angle portion has a predetermined angle from about 2 degrees to about 16 degrees.3. The collimator of claim 2 , wherein the entrance angle portion has a predetermined angle of about 2.5 degrees and has a length of about 2.54 centimeters.4. The collimator of claim 2 , wherein the entrance angle portion has a predetermined angle of about 15 degrees and has a length of about 3.81 millimeters.5. The collimator of claim 1 , wherein the first aspect ratio ...

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Номер записи: 57

03-05-2018 дата публикации

Physical Vapor Deposition System with a Source of Isotropic Ion Velocity Distribution at the Wafer Surface

Номер: US20180119272A1

Автор: BROWN KARL M., HOFFMAN DANIEL J., PIPITONE JOHN, RUI YING

Принадлежит:

In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator. 120-. (canceled)21. An apparatus for performing physical vapor deposition , comprising:a chamber;a target comprising a metallic element disposed in the chamber, wherein the target provides a first electrode for the chamber;a support having a top surface to support a workpiece having a diameter in the chamber, wherein the support includes a second electrode, and wherein the support is positioned to hold the workpiece such that a targetto-workpiece gap is less than one-fifth of a diameter of the workpiece;a gas supply configured to introduce a carrier gas into the reactor chamber and maintain a gas pressure in the chamber above a threshold pressure at which a mean free path is less than 5% of the gap;an RF generator having a frequency exceeding 30 MHz to apply power to the target to generate a capacitively coupled plasma at the target; andan impedance match network coupled between the VHF generator and the target;wherein the support is configured to provide an RF ground return path at the frequency of the VHF generator.22. The apparatus of claim 21 , wherein the support is positioned such that the gap is about 60 mm and gas supply is configured such that the gas pressure is about 100 mT.23. The apparatus of claim 21 , wherein a sidewall of the chamber is configured to provide a second ...

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Номер записи: 58

16-04-2020 дата публикации

MASKING STRUCTURE FOR A WAFER SUPPORTING PLATE

Номер: US20200118802A1

Автор: Chen Hsuan-Chung, Cheng Yao-Syuan, Chiu Hsin Chih, Hsieh Cheng-Chih, LU LIN-SHENG, Wang Chun-Fu

Принадлежит:

A masking structure for a wafer supporting plate comprises a cavity; a carrying tray having a plurality of recesses in a top surface thereof for receiving a plurality of wafers; the carrying tray can be transferred into and out of the cavity by using a robot; a supporting plate installed within the cavity and below the carrying tray; the supporting plate could move upwards, and downwards; a mask installed within the cavity and above the carrying tray; the mask formed with a plurality of through holes which are positioned and shaped to be corresponding to those of the wafers on the carrying tray; therefore, when the supporting plate lifts the carrying tray to be near the mask, the wafers are exposed out of the through holes. 1. A masking structure for a wafer supporting plate; comprising:a cavity;a carrying tray having a plurality of recesses in a top surface thereof for receiving a plurality of wafers; the carrying tray can be transferred into and out of the cavity by using a robot;a supporting plate installed within the cavity and below the carrying tray; the supporting plate could move upwards, and downwards;a mask installed within the cavity and above the carrying tray; the mask formed with a plurality of through holes which are positioned and shaped to be corresponding to those of the wafers on the carrying tray; therefore, when the supporting plate lifts the carrying tray to be near the mask, the wafers are exposed out of the through holes.2. The masking structure for a wafer supporting plate as claimed in claim 1 , further comprising a plurality of top rods; a lower part of each top rod being installed at a lower side of the cavity and an upper side of each top rod penetrating through the supporting plate; the top rod being liftable for supporting the carrying tray and being descendable to be hidden within the supporting plate so that the carrying tray is placed on a top surface of the supporting plate.3. The masking structure for a wafer supporting plate as ...

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Номер записи: 59

16-04-2020 дата публикации

FILM FORMATION APPARATUS

Номер: US20200118803A1

Автор: ONO Daisuke

Принадлежит:

According to one embodiment, a film formation apparatus includes a chamber having an interior to be vacuumed, a carrying unit which is provided in the chamber, and which carries a workpiece that has a processing target surface in a solid shape along a circular carrying path, a film formation unit that causes a film formation material to be deposited by sputtering on the workpiece that is being carried by the carrying unit to form a film thereon, and a shielding member which has an opening located at a side where the workpiece passes through, and which forms a film formation chamber where the film formation by the film formation unit is performed. A compensation plate that protrudes in the film formation chamber is provided, and the compensation plate has a solid shape along a shape of the processing target surface of the workpiece, and is provided at a position facing the workpiece. 1. A film formation apparatus comprising:a chamber, an interior of the chamber is capable of being vacuumed;a carrying unit which is provided in the chamber, and which carries a workpiece that has a processing target surface in a solid shape along a circular carrying path;a film formation unit that causes a film formation material to be deposited by sputtering on the workpiece that is being carried by the carrying unit to form a film thereon; anda shielding member which has an opening located at a side where the workpiece passes through, and which forms a film formation chamber where the film formation by the film formation unit is performed,wherein a compensation plate that protrudes in the film formation chamber is provided, andwherein the compensation plate has a solid shape along a shape of the processing target surface of the workpiece, and is provided at a position facing the workpiece.2. The film formation apparatus according to claim 1 , wherein:the workpiece comprises a convexity and a flat surface in a surface facing the film formation unit;the shielding member comprises a ...

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Номер записи: 60

25-08-2022 дата публикации

PIEZOELECTRIC BULK LAYERS WITH TILTED C-AXIS ORIENTATION AND METHODS FOR MAKING THE SAME

Номер: US20220271726A1

Автор: Belsick John, DENIZ Derya, Kraft Robert

Принадлежит:

Bulk acoustic wave resonator structures include a bulk layer with inclined c-axis hexagonal crystal structure piezoelectric material supported by a substrate. The bulk layer may be prepared without first depositing a seed layer on the substrate. The bulk material layer has a c-axis tilt of about 32 degrees or greater. The bulk material layer may exhibit a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation. A method for preparing a crystalline bulk layer having a c-axis tilt includes depositing a bulk material layer directly onto a substrate at an off-normal incidence. The deposition conditions may include a pressure of less than 5 mTorr and a deposition angle of about 35 degrees to about 85 degrees. 1. A method for preparing a crystalline bulk layer having a c-axis tilt , the method comprising:depositing a bulk material layer directly onto a substrate at an off-normal incidence under deposition conditions comprising a pressure of less than 5 mTorr.2. The method of claim 1 , wherein the pressure is from about 0.5 mTorr to about 4.5 mTorr.3. The method of claim 1 , wherein the pressure is from about 1 mTorr to about 4 mTorr.4. The method of claim 1 , wherein the bulk material layer is deposited at a deposition angle of about 35 degrees to about 85 degrees.5. The method of claim 1 , wherein the bulk material layer has a c-axis tilt of about 35 degrees to about 85 degrees.6. The method of claim 1 , wherein the bulk material exhibits a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation.7. A method for preparing a crystalline bulk layer having a c-axis tilt claim 1 , the method comprising:depositing a bulk material layer directly onto a substrate at an off-normal incidence, the bulk material layer having a thickness of about 1,000 Angstroms to about 30,000 Angstroms.8. The method of claim 7 , wherein the thickness is about 3 claim 7 ,000 Angstroms or greater.9. The method of claim 7 , wherein the bulk ...

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Номер записи: 61

10-05-2018 дата публикации

Rate Enhanced Pulsed DC Sputtering System

Номер: US20180130648A1

Автор: Pelleymounter Douglas

Принадлежит:

A sputtering system and method are disclosed. The system includes first power source coupled to a first magnetron and an anode, and the first power source provides a first anode voltage that alternates between positive and negative during each of multiple cycles. The system also includes a second power source coupled to the second magnetron and the anode, and the second power source provides a second anode voltage that alternates between positive and negative during each of the multiple cycles. A controller of the system controls the first power source and the second power source to phase-synchronize the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the first and second magnetrons during another portion of each cycle. 1. A pulsed sputtering system , comprising:a plasma chamber enclosing a first magnetron coupled to a first target, a second magnetron coupled to a second target, and an anode;a first power source coupled to the first magnetron and the anode, the first power source configured to provide a first anode voltage that alternates between positive and negative relative to the first magnetron during each of multiple cycles;a second power source coupled to the second magnetron and the anode, the second power source configured to provide a second anode voltage that alternates between positive and negative relative to the second magnetron during each of the multiple cycles; anda controller configured to control the first power source and the second power source to phase-synchronize the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the first and second magnetrons during another portion of each cycle.2. The system of claim 1 , wherein:the ...

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Номер записи: 62

03-06-2021 дата публикации

High throughput Vacuum Deposition Sources and System

Номер: US20210164099A1

Автор: Guo George Xinsheng

Принадлежит:

A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber. 1. A high throughput deposition apparatus , comprising:a process chamber;a plurality of deposition sources that form a first closed loop in the process chamber;a first substrate carrier assembly configured to hold one or more substrates inside the first closed loop, wherein the one or more substrates are configured to face outward to receive a deposition material from the plurality of deposition sources in the first closed loop, wherein the deposition sources are configured to produce vapor for chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD); anda transport mechanism configured to move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.2. The high throughput deposition apparatus of claim 1 , further comprising:a plurality of deposition sources that form a second closed loop in the process chamber; anda second substrate carrier assembly configured to hold one or more substrates and configured to receive a deposition material from the plurality of deposition sources in the second closed loop, wherein the one or more substrates held by the second substrate carrier assembly are parallel to the one or more substrates held by the first substrate carrier assembly.3. The high throughput deposition apparatus of claim 1 , wherein the ...

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Номер записи: 63

01-09-2022 дата публикации

METHOD AND APPARATUS FOR SPUTTER DEPOSITION

Номер: US20220277940A1

Автор: RENDALL Michael Edward

Принадлежит: Dyson Technology Limited

Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes biasing element for applying electrical bias to the target material. The apparatus also includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field having magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path. 1. A sputter deposition apparatus comprising:a substrate guide arranged to guide a substrate along a curved path;a target assembly comprising:a target portion spaced from the substrate guide and arranged to support target material, the target portion and the substrate guide defining between them a deposition zone; andbiasing means for applying electrical bias to the target material; anda confining arrangement comprising one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the substrate in use, the confining magnetic field being characterised by magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.2. The apparatus according to claim 1 , wherein the biasing means is configured to apply electrical bias having negative polarity to the target material.3. The apparatus according to claim 1 , ...

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Номер записи: 64

18-05-2017 дата публикации

ADJUSTABLE NON-DISSIPATIVE VOLTAGE BOOSTING SNUBBER NETWORK

Номер: US20170139433A1

Автор: Finley Kenneth W.

Принадлежит:

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. 1. A snubber circuit comprising:first and second power rails that in combination provide an input and output of the snubber circuit;a voltage multiplier coupled between the first power rail and the second power rail, the voltage multiplier boosting a voltage between the first and second power rail;a first unidirectional switch coupled between the first power rail and the voltage multiplier and blocking current attempting to pass from the voltage multiplier to the first power rail through the first unidirectional switch; anda first current limiter coupled between the first power rail and the voltage multiplier, the first current limiter providing a low-resistance current path from the voltage multiplier to the first power rail.2. The snubber circuit of claim 1 , wherein the snubber circuit is coupled between a power supply and a load having an impedance.3. The snubber circuit of claim 2 , wherein the voltage multiplier absorbs and stores energy from the power supply when the impedance of the load substantially increases.4. The snubber circuit of claim 3 , wherein a switching circuit is coupled between the snubber and the load and receives DC power from the power supply and provides pulsed DC power to the load.5. The snubber circuit of claim 3 , wherein the boosting of the voltage between the first and second power rails increases a current ramp rate of power reaching the load.6. The snubber circuit of claim 1 , wherein the snubber is a non- ...

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Номер записи: 65

18-05-2017 дата публикации

SPUTTERING APPARATUS AND PROCESSING APPARATUS

Номер: US20170140907A1

Автор: HIROMI Taichi, Ichikawa Atsuyuki, SHIMOKAWA Hidetoshi

Принадлежит: CANON ANELVA CORPORATION

A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. The sputtering apparatus includes a shield member configured to shield the opening portion from the sputtering space. The opening portion is formed so that a pressure gauge capable of measuring the pressure in the sputtering space can be attached, and the shield member is arranged so that at least a part of the shield member is buried in the concave portion. 1. A sputtering apparatus that includes a space defining member defining a sputtering space for forming a film on a substrate , whereinthe space defining member includes a concave portion,an opening portion is provided in a bottom portion of the concave portion,the sputtering apparatus includes a shield member configured to shield the opening portion from the sputtering space,the opening portion is formed so that a pressure gauge which can measure a pressure in the sputtering space is attachable,the shield member is arranged so that at least a part of the shield member is buried in the concave portion, andthe shield member is detachable.2. The sputtering apparatus according to claim 1 , wherein the space defining member is a member forming at least a part of a wall of a vacuum chamber.3. The sputtering apparatus according to claim 1 , wherein the space defining member is a protective member provided so as to cover an inner wall of a vacuum chamber.4. The sputtering apparatus according to claim 1 , wherein the shield member has an umbrella shape.5. The sputtering apparatus according to claim 1 , wherein the shield member is formed from an umbrella-shaped first member which is provided such that a gap is formed between the bottom portion of the concave portion and the first member and a cylindrical second member provided in a peripheral portion of the opening ...

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Номер записи: 66

24-05-2018 дата публикации

COLLIMATOR FOR USE IN A PHYSICAL VAPOR DEPOSITION CHAMBER

Номер: US20180142342A1

Автор: Miller Keith A., TAVASSOLI Hamid, Tomko Andrew, YOSHIDOME GOICHI

Принадлежит:

Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator. 1. A collimator for use in a substrate processing chamber , comprising:a ring;a body surrounding the ring and having an inner annular wall; anda plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.2. The collimator of claim 1 , further comprising:a plurality of channels corresponding to and disposed within the plurality of spokes, wherein the plurality of channels extend through the body and the ring.3. The collimator of claim 1 , wherein the collimator is a unitary structure.4. The collimator of claim 1 , wherein the ring has an inner diameter between about 210 mm and about 325 mm.5. The collimator of claim 1 , wherein the ring has a height between about 40 mm and about 70 mm.6. The collimator of claim 1 , wherein the ring and the plurality of spokes have a thickness between about 0.25 inches to about 1.5 inches.7. The collimator of claim 1 , wherein the ring is a single ring.8. The collimator of claim 1 , wherein all surfaces of the collimator disposed radially inward of the inner annular wall are texturized.9. The collimator of claim 8 , wherein the texturized surfaces have a surface roughness between about 1 claim 8 ,150 micro-inches to about 1 claim 8 ,500 micro-inches.10. The collimator of claim 9 , wherein the texturized surfaces are formed of an aluminum arc spray coating.11. The collimator of claim 1 , wherein the plurality of spokes are eight spokes arranged axisymmetrically about a central axis of the collimator.12. A process chamber claim 1 , comprising:a chamber body defining an interior volume;a sputtering target disposed in an upper ...

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Номер записи: 67

09-05-2019 дата публикации

Transparent halo assembly for reduced particle generation

Номер: US20190139758A1

Автор: Costel Biloiu, Daniel McGillicuddy, Ernest E. Allen

Принадлежит: Varian Semiconductor Equipment Associates Inc

Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.

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Номер записи: 68

04-06-2015 дата публикации

Apparatus And Method For Improved Darkspace Gap Design In RF Sputtering Chamber

Номер: US20150155143A1

Автор: FORSTER John C., TANG XIANMIN

Принадлежит:

Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield. 1. A method for manufacturing a target assembly for use in an RF sputtering chamber comprising:providing a backing plate having a back surface, a front peripheral face defining an inner peripheral edge and a recessed area having a shape bounded by the inner peripheral edge;providing a target having substantially the same shape as the recessed area, the target having an inner surface, a sputterable target surface and an outer peripheral edge; andjoining the inner surface of the target to the inner peripheral face of the backing plate so that the sputterable target surface is substantially coplanar with the outer peripheral face.2. The method of claim 1 , wherein a space is provided between the outer peripheral edge of the target and inner peripheral edge of the backing plate to define a gap.3. The method of claim 1 , wherein no space is provided between the outer peripheral edge of the target and inner peripheral edge of the backing plate.4. A method for manufacturing a target assembly for use in an RF sputtering chamber comprising:installing a target comprising a sputterable target surface, a top surface, and an outer peripheral edge into a recess of a backing plate, wherein the backing plate comprises an outer peripheral front face, an inner peripheral face, an inner peripheral edge, and a top surface, wherein the recessed area is bounded by the inner peripheral edge and the inner peripheral face, and wherein the sputterable target surface and the outer peripheral front face lie in the same plane when installed.5. The method of claim 4 , which further comprises joining the outer peripheral edge of the target to the inner ...

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Номер записи: 69

21-08-2014 дата публикации

CHARGE REMOVAL FROM ELECTRODES IN UNIPOLAR SPUTTERING SYSTEM

Номер: US20140231243A1

Автор: Finley Kenneth W.

Принадлежит: ADVANCED ENERGY INDUSTRIES, INC.

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. 1. A pulsed DC power supply system configured to provide pulsed DC voltage between an anode and a cathode of a plasma processing chamber , the pulsed DC voltage including a first power delivery period of positive voltage separated from a second power delivery period by a charge removal period comprising a charge removal voltage having a negative polarity for removing charge from the cathode , the pulsed DC power supply system comprising:a DC power supply coupled to and providing power to a first and second rail;a switching circuit coupled to the first and second rails and switched so as to convert the power on the first and second rails to the pulsed DC voltage, where positive voltage is referenced from the anode to the cathode; a first unidirectional switch coupled between the first rail and a first electrical node and only allowing current to pass from the first rail to the first electrical node;', 'a voltage multiplier coupled between the second rail and the first electrical node and including an output that provides access to a charge removal voltage within the voltage multiplier;', 'a switch coupled between the first electrical node and a second electrical node;', 'a first current limiter coupled between the second electrical node and the first rail; and, 'a voltage-boosting circuit coupled between the first and second rails and comprisinga charge removal bias circuit coupled to the output of the voltage multiplier and providing the charge ...

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Номер записи: 70

11-06-2015 дата публикации

SPUTTER DEPOSITION METHOD, SPUTTERING SYSTEM, MANUFACTURE OF PHOTOMASK BLANK, AND PHOTOMASK BLANK

Номер: US20150159264A1

Автор: FUKAYA Souichi, INAZUKI Yukio, Nakagawa Hideo, Sasamoto Kouhei

Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A film is sputter deposited on a substrate by providing a vacuum chamber () with first and second targets () such that the sputter surfaces () of the first and second targets () may face the substrate () and be arranged parallel or oblique to each other, simultaneously supplying electric powers to the first and second targets (), and depositing sputtered particles on the substrate while controlling sputtering conditions such that the rate at which sputtered particles ejected from one target reach the sputter surface of the other target and deposit thereon is not more than the rate at which the sputtered particles are removed from the other target by sputtering. 1. A method for sputter depositing a film on a substrate , comprising the steps of:providing a vacuum chamber with first and second targets such that the surfaces of the first and second targets to be sputtered may face a substrate to be coated and be arranged parallel or oblique to each other,simultaneously supplying electric powers to the first and second targets, anddepositing sputtered particles on the substrate while controlling sputtering conditions of the first and second targets such that the rate at which sputtered particles ejected from one target reach the sputter surface of the other target and deposit thereon is not more than the rate at which the sputtered particles are removed from the other target by sputtering thereof.2. The method of wherein for either one or both of the first and second targets claim 1 , the resistivity of sputtered particles depositing on the sputter surface of the other target is higher than the resistivity of the other target claim 1 , or the sputtering rate of the material of which sputtered particles depositing on the sputter surface of the other target are composed is lower than the sputtering rate of the material of which the other target is composed.3. The method of wherein a barrier member for permanently separating the space defined between the sputter surfaces of ...

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Номер записи: 71

01-06-2017 дата публикации

SPUTTERING DEVICE AND METHOD OF FORMING THIN FILM USING THE SAME

Номер: US20170152596A1

Автор: JEONG Chang Oh, KANG Hyun Ju, SOHN Sang Woo

Принадлежит:

A sputtering device includes a plurality of sputtering targets provided in a process chamber, a substrate holder facing the plurality of sputtering targets and configured to support a substrate, and a deposition mask disposed between the plurality of sputtering targets and the substrate, the deposition mask covering an end portion of the substrate. At least one of the plurality of sputtering targets has an arc shape that is convex toward the substrate and a remainder of the plurality of sputtering targets are flat facing toward the substrate. 1. A sputtering device , comprising:a plurality of sputtering targets provided in a process chamber;a substrate holder facing the plurality of sputtering targets, and the substrate holder configured to support a substrate; anda deposition mask disposed between the plurality of sputtering targets and the substrate, the deposition mask covering an end portion of the substrate,wherein at least one of the plurality of sputtering targets has an arc shape that is convex toward the substrate, and a remainder of the plurality of sputtering targets are flat facing toward the substrate.2. The sputtering device of claim 1 , wherein two arc-shaped sputtering targets are disposed on opposite ends of the plurality of sputtering targets having flat shapes.3. The sputtering device of claim 1 , wherein each of the remainder of the plurality of sputtering targets has a rectangular bar shape in a plane facing toward the substrate.4. The sputtering device of claim 1 , further comprising a first magnet disposed under each of the remainder of the plurality of sputtering targets claim 1 ,wherein the first magnet is configured to retain plasma generated in the process chamber in an upper space of the process chamber that is above each of the remainder of the plurality of sputtering targets.5. The sputtering device of claim 4 , wherein the first magnet has a rectangular bar shape.6. The sputtering device of claim 5 , further comprising a second magnet ...

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Номер записи: 72

31-05-2018 дата публикации

PROCESS KIT AND METHOD FOR PROCESSING A SUBSTRATE

Номер: US20180151337A1

Автор: CAO YONG, Nguyen Thanh X., ZENG WEIMIN

Принадлежит:

Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield. 1. A process kit , comprising:a non-conductive upper shield having an upper portion configured to surround a sputtering target and a lower portion extending downward from the upper portion; anda conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall, wherein the cylindrical body is radially spaced apart from the non-conductive upper shield by a first gap, and wherein the lower wall is vertically spaced apart from the lower portion of the non-conductive upper shield by a second gap configured to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.2. The process kit of claim 1 , wherein the non-conductive upper shield is cylindrical.3. The process kit of claim 1 , wherein the first gap is between about 0.375 inches and about 1 inch.4. The process kit of claim 1 , ...

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Номер записи: 73

01-06-2017 дата публикации

REACTION CHAMBER AND SEMI-CONDUCTOR PROCESSING DEVICE

Номер: US20170154758A1

Автор: CHEN PENG, SHE Qing, ZHANG Yanzhao

Принадлежит:

A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring () made of a magnetic insulation material and an insulating ring () made of an insulating material; the Faraday shielding ring () is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring () and the insulating ring () are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring () is stacked on the insulating ring () in a vertical direction. A shielding ring () is disposed surrounding an inner peripheral wall of the insulating ring (), the shielding ring () is connected to an area of a lower surface of the Faraday shielding ring () adjacent to a center of the reaction chamber, and the shielding ring () is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction. The reaction chamber and the semiconductor processing device can not only avoid or reduce the risk of sparking, but also reduce the pollution of the reaction chamber caused by the flaking off of metal particles; and in addition, it is possible to increase an inner diameter and an available space of the reaction chamber. 1. A reaction chamber , comprising: a Faraday shielding ring made of a magnetic insulation material and an insulating ring made of an insulating material , the Faraday shielding ring being provided with a slot thereon passing through a ring surface thereof in an axial direction , both the Faraday shielding ring and the insulating ring being disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber , and the Faraday shielding ring being stacked on the insulating ring in a vertical direction , wherein , a shielding ring is disposed surrounding an inner peripheral wall of the insulating ring , the shielding ring is connected to an area of a lower surface of the ...

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Номер записи: 74

07-06-2018 дата публикации

Film forming apparatus

Номер: US20180155817A1

Автор: Junichi Takei, Naoyuki Suzuki, Tetsuya Miyashita

Принадлежит: Tokyo Electron Ltd

A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.

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Номер записи: 75

23-05-2019 дата публикации

SHADOW RING FOR MODIFYING WAFER EDGE AND BEVEL DEPOSITION

Номер: US20190153592A1

Автор: AYOUB Mohamad A., Balasubramanian Ganesh, BANSAL Amit Kumar, BOIS Dale Du, CHAN Chiu, Cheng Siu F., FODOR Mark, Kim Robert, Nguyen Binh, Padhi Deenesh, Rocha Juan Carlos, Yu Hang

Принадлежит:

Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer. 1. A method of forming a shadow ring for use in a deposition chamber , the method comprising:forming an annular body having a top surface and a bottom surface, the bottom surface including a first annular bottom surface and a second annular bottom surface, wherein the second annular bottom surface is disposed in a recessed slot located inwardly relative to the first annular bottom surface, the second annular bottom surface located a first distance above the first annular bottom surface;forming at least one pin member extending from the first annular bottom surface; andforming an annular lip extending inwardly relative to the recessed slot and the first annular bottom surface, wherein the annular lip has a third annular bottom surface located a second distance above the first annular bottom surface, the second distance less than the first distance, and wherein the recessed slot is formed between the pin member and the annular lip.2. The method of claim 1 , wherein the at least one pin member has tapered sides.3. The method of claim 1 , wherein the at least one pin member is frustoconically shaped.4. The method of claim 1 , wherein the recessed slot has a width of about 0.254 mm or greater.5. The method of claim 1 ...

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Номер записи: 76

07-06-2018 дата публикации

Systems and Methods for Integrated Resputtering in a Physical Vapor Deposition Chamber

Номер: US20180158658A1

Автор: Hsieh Ching-Hua, Jang Syun-Ming, Pan Shing-Chyang, TSAI Ming-Hsing

Принадлежит:

Physical vapor deposition systems are disclosed herein. An exemplary physical vapor deposition system includes a target, a collimator, a power source system, and a control system. The power source system is configured to supply power to the collimator and the target. The control system is configured to control the power source system, such that the collimator is bombarded with noble gas ions during a sputtering process and the target is bombarded with metal ions during a re-sputtering process, wherein the collimator functions as a sputtering target during the sputtering process and as the collimator during the re-sputtering process. 1. A physical vapor deposition system comprising:a target;a collimator;a power source system configured to supply power to the collimator and the target; anda control system configured to control the power source system, such that the collimator is bombarded with noble gas ions during a sputtering process and the target is bombarded with metal ions during a re-sputtering process, wherein the collimator functions as a sputtering target during the sputtering process and as the collimator during the re-sputtering process.2. The physical vapor deposition system of claim 1 , wherein the noble gas ions include argon and the metal ions include copper.3. The physical vapor deposition system of claim 1 , wherein the power source system includes:a radiofrequency (RF) power source coupled to the collimator;a direct current (DC) power source coupled to the target; andwherein the control system is further configured to set the power source system to supply RF power to the collimator via the RF power source during the sputtering process and supply DC power to the target via the DC power source during the re-sputtering process.4. The physical vapor deposition system of configured to generate a plasma that includes the noble gas ions during the sputtering process and the metal ions during the re-sputtering process claim 1 , and further wherein the power ...

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Номер записи: 77

14-05-2020 дата публикации

METHOD OF CONTROLLING ION ENERGY DISTRIBUTION USING A PULSE GENERATOR WITH A CURRENT-RETURN OUTPUT STAGE

Номер: US20200154556A1

Автор: Dhindsa Rajinder, Dorf Leonid, LUERE Olivier, MISHRA Anurag Kumar, Rogers James, SRINIVASAN Sunil

Принадлежит:

Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate. 1. A processing chamber , comprising: a substrate support assembly comprising a biasing electrode and a substrate-supporting surface, wherein the biasing electrode is electrically coupled to a first electrical conductor;', a pulse generator that is electrically coupled to the second electrical conductor; and', 'a current-return output stage, wherein a first end of the current-return output stage is electrically coupled to the second electrical conductor, and a second end of the current-return output stage is electrically coupled to ground; and, 'a bias generator that is electrically coupled to a second electrical conductor, wherein the bias generator is configured to establish a pulsed voltage waveform at the biasing electrode, the bias generator comprising, 'a blocking capacitor coupled between the first electrical conductor and the second electrical conductor., 'a pulsed DC biasing system, comprising2. The processing chamber of claim 1 , wherein the biasing electrode is spaced apart from the substrate-supporting surface by a layer of dielectric material.3. The processing chamber of claim 1 , wherein the blocking capacitor has a capacitance of between about 40 nF and about 80 nF.4. The processing chamber of claim 1 , wherein a high-voltage module is electrically coupled to the first electrical conductor at a connection point disposed between the biasing electrode and the blocking capacitor.5. The processing chamber of claim 4 , further comprising a resistor disposed between the high-voltage module and the connection point.6. The processing chamber of claim 5 , wherein the resistor has a resistance of more than about 1 MOhm.7. The ...

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Номер записи: 78

29-09-2022 дата публикации

PVD CHAMBER SHIELD STRUCTURE INCLUDING IMPROVED COTAING LAYER OR SHIELD

Номер: US20220310372A1

Автор: AHN Jun Ku, HWANG Uk, JUNG Gwang Sun, Lee Jong Ho, Lee Young Ho

Принадлежит:

A PVD chamber shield includes: a shield configured to surround a space between a sputtering target and a substrate that are disposed in a PVD chamber body, the shield having a hollow shape with an inner surface and an outer surface; and a coating layer formed over the inner surface of the shield. The coating layer has i) a dielectric constant not greater than a dielectric constant of a material deposited over the substrate, ii) a porosity greater than 0 vol % and less than 100 vol %, and iii) a thickness greater than 150 pm and less than a given upper limit, the upper limit being set to prevent an occurrence of peeling of a material deposited over the coating layer. 1. A physical vapor deposition (PVD) chamber shield structure comprising:a shield configured to surround a space between a sputtering target and a substrate that are disposed in a PVD chamber body, the shield having a hollow shape with an inner surface and an outer surface; anda coating layer formed over the inner surface of the shield,wherein the coating layer has a dielectric constant not greater than that of a material deposited over the substrate during a PVD process.2. The PVD chamber shield structure of claim 1 , wherein the coating layer includes one or more of GeAsTe claim 1 , GeAsSe claim 1 , GeAsS(wherein claim 1 , 0 Подробнее

Номер записи: 79

18-09-2014 дата публикации

Methods and apparatus for reducing sputtering of a grounded shield in a process chamber

Номер: US20140262764A1

Автор: Alan Ritchie, John C. Forster, Muhammad Rasheed

Принадлежит: Applied Materials Inc

Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

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Номер записи: 80

21-06-2018 дата публикации

Sputtering cathode, sputtering device, and method for producing film-formed body

Номер: US20180171464A1

Автор: Hiroshi Iwata, Ippei Sato, Keiichi Hashimoto, Naonori SHIBATA, Naoya Okada, Toshiyuki NEDU, Yuta TAKAKUWA

Принадлежит: Keihin Ramtech Co Ltd

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

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Номер записи: 81

23-06-2016 дата публикации

CHARGE REMOVAL FROM ELECTRODES IN UNIPOLAR SPUTTERING SYSTEM

Номер: US20160181074A1

Автор: Finley Kenneth W.

Принадлежит:

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. 1. A pulsed DC power supply system comprising:a first and second rail configured to receive power from a DC power supply; 'a first unidirectional switch coupled between the first rail and a first electrical node and only allowing current to pass from the first rail to the first electrical node;', 'a switching circuit coupled to the first and second rails and switched so as to convert the power on the first and second rails to a pulsed DC voltage;'}a charge removal bias circuit coupled to at least the second rail and the switching circuit and providing a negative charge removal voltage to the switching circuit.2. The pulsed DC power supply of claim 1 , further comprising a voltage multiplier coupled between the second rail and the first electrical node and including an output that provides access to the negative charge removal voltage within the voltage multiplier.3. The pulsed DC power supply of claim 2 , wherein the switching circuit includes first claim 2 , second claim 2 , third claim 2 , and fourth switches of the switching circuit arranged in an h-bridge topology such that when the first and fourth switches of the switching circuit are closed claim 2 , a positive voltage is applied across the first and second rails claim 2 , and when the second and third switches of the switching circuit are closed claim 2 , the negative charge removal voltage is applied across the first and second rails.4. The pulsed DC power supply of claim 2 , further ...

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Номер записи: 82

02-07-2015 дата публикации

Sputtering apparatus and method thereof

Номер: US20150184285A1

Автор: KATSUSHI Kishimoto, Sang-won Shin, Sang-Woo Sohn, Takayuki Fukasawa, Yeon-Keon MOON

Принадлежит: Samsung Display Co Ltd

A sputtering apparatus includes a chamber, a plate disposed inside the chamber, a target unit including at least one targer facing the plate, a power supply unit coupled to the target, and a filter unit disposed between the substrate and the target. The filter unit includes at least one filter. A substrate is disposed on the plate. The filter unit may include a first filter and a second filter with the first filter disposed between the target and the second filter.

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Номер записи: 83

06-06-2019 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20190172690A1

Автор: Chihaya Hiroaki, SONE Hiroshi

Принадлежит:

A substrate processing apparatus includes a supporting table having a mounting region for a substrate. A rotation shaft supporting a shutter extends in a vertical direction. The shutter is moved between a first region above the supporting table and a second region by rotating the rotation shaft about its central axis. The shutter includes a pipe having gas output holes. When the shutter is disposed in the first region, the gas output holes are located outside the mounting region in a rotation direction from the second region toward the first region. The minimum distance between the central axis and the gas output holes is smaller than or equal to the minimum distance between the central axis and the mounting region. The maximum distance between the central axis and the gas output holes is greater than equal to the maximum distance between the central axis and the mounting region. 1. A substrate processing apparatus comprising:a chamber providing an inner space;a supporting table provided in the inner space, the supporting table having a mounting region for mounting a disc-shaped substrate;a shutter configured to cover the mounting region when the shutter is disposed in a first region above the supporting table, the shutter having a pipe providing a plurality of gas output holes opened downward;a rotation shaft configured to support the shutter and spaced apart from the supporting table, the rotation shaft extending in a vertical direction; anda driving unit configured to move the shutter between the first region and a second region spaced apart from the supporting table by rotating the rotation shaft about a central axis thereof,wherein the gas output holes are provided on a side of a rotation direction from the second region toward the first region with respect to a reference plane including a reference point in the shutter and the central axis,the reference point corresponds to a center of the mounting region when the shutter is disposed in the first region, ...

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Номер записи: 84

22-06-2017 дата публикации

Methods and apparatus for processing a substrate

Номер: US20170178877A1

Автор: Anantha K. Subramani, Chi Hong Ching, Rongjun Wang, Xianmin Tang

Принадлежит: Applied Materials Inc

Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

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Номер записи: 85

22-06-2017 дата публикации

Sputtering System And Method Including An Arc Detection

Номер: US20170178879A1

Автор: David C. Halstead, Jesse N. Klein, Michael R. Gilbert

Принадлежит: MKS Instruments Inc

A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

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Номер записи: 86

02-07-2015 дата публикации

Vacuum-Processing Apparatus, Vacuum-Processing Method, and Storage Medium

Номер: US20150187546A1

Автор: Atsushi Gomi, Kanto Nakamura, Shinji Furukawa, Tetsuya Miyashita, Toru Kitada

Принадлежит: Tokyo Electron Ltd

The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.

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Номер записи: 87

30-06-2016 дата публикации

Semiconductor Device, Display Device, Display Module, Electronic Device, Oxide, and Manufacturing Method of Oxide

Номер: US20160190346A1

Автор: Masashi Oota, Shunpei Yamazaki, Takuya Kawata, Yusuke Nonaka

Принадлежит: Semiconductor Energy Laboratory Co Ltd

The semiconductor device includes a first insulator over a substrate, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor in contact with the second oxide semiconductor, a third oxide semiconductor on the second oxide semiconductor and the first and second conductors, a second insulator over the third oxide semiconductor, and a third conductor over the second insulator. At least one of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a crystallinity peak that corresponds to a (hkl) plane (h=0, k=0, l is a natural number) observed by X-ray diffraction using a Cu K-alpha radiation as a radiation source. The peak appears at a diffraction angle 2 theta greater than or equal to 31.3 degrees and less than 33.5 degrees.

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Номер записи: 88

04-06-2020 дата публикации

Physical vapor deposition with a dual-shutter

Номер: US20200176235A1

Автор: Hsueh-Chung Chen, Wei Wang

Принадлежит: International Business Machines Corp

Techniques that facilitate physical vapor deposition with a dual-shutter are provided. In one example, a system includes a target plate, a first shutter plate and a second shutter plate. The target plate is associated with a voltage for physical vapor deposition. The first shutter plate comprises a first set of openings. The second shutter plate comprises a second set of openings. The first shutter plate and the second shutter plate are located between the target plate and a substrate. Furthermore, the first shutter and the second shutter rotate.

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Номер записи: 89

23-07-2015 дата публикации

Reactive sputtering apparatus

Номер: US20150206714A1

Автор: Kazuaki Matsuo, Nobuo Yamaguchi, Satoshi Uchino, Susumu Akiyama, Yoshimitsu Shimane

Принадлежит: Canon Anelva Corp

A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

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Номер записи: 90

23-07-2015 дата публикации

Systems and Methods for Integrated Resputtering in a Physical Vapor Deposition Chamber

Номер: US20150206724A1

Автор: Hsieh Ching-Hua, Jang Syun-Ming, Pan Shing-Chyang, Tsai Minghsing

Принадлежит:

The present disclosure is directed to a material layer deposition system. The material layer deposition system includes a wafer pedestal configured to support at least one wafer within a confinement shield structure and a target carrier structure positioned above the wafer pedestal at an opposite side of the confinement shield structure. The target carrier structure is configured to support a sputtering target. The material layer deposition system further includes a collimator disposed within the confinement shield structure between the wafer pedestal and the target carrier structure, an electrical power source coupled to the collimator to supply electrical power, and a control system configured to control the electrical power source coupled to the collimator. 1. A material layer deposition chamber , comprising:a confinement shield structure;a wafer pedestal configured to support at least one wafer within the confinement shield structure;a target carrier structure positioned above the wafer pedestal at an opposite side of the confinement shield structure, the target carrier structure configured to support a sputtering target;a collimator disposed within the confinement shield structure between the wafer pedestal and the target carrier structure; andan electrical power source coupled to the collimator to supply electrical power.2. The material layer deposition chamber of claim 1 , wherein the electrical power source coupled to the collimator comprises a DC power source.3. The material layer deposition chamber of claim 1 , wherein the electrical power source coupled to the collimator comprises a radiofrequency (RF) power source.4. The material layer deposition chamber of claim 1 , further comprising an RF power source coupled to the wafer pedestal.5. The material layer deposition chamber of claim 1 , wherein the collimator has an exterior surface formed from copper.6. The material layer deposition chamber of claim 1 , wherein the collimator is formed from copper.7. A ...

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Номер записи: 91

18-06-2020 дата публикации

PROCESS KIT HAVING TALL DEPOSITION RING FOR PVD CHAMBER

Номер: US20200194243A1

Автор: Gunther David, SAVANDAIAH Kirankumar Neelasandra, Tsai Cheng-Hsiung

Принадлежит:

Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel. 1. A process kit , comprising: an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion;', 'an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein an inner surface of the inner lip and the inner surface of the annular band together form a central opening of the deposition ring, and wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm;', 'a channel disposed radially outward of and beneath the annular band; and', 'an outer lip extending upwardly and disposed radially outward of the channel., 'a deposition ring configured to be disposed on a substrate support, the deposition ring comprising2. The process kit of claim 1 , further comprising:a one-piece process ...

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Номер записи: 92

28-07-2016 дата публикации

MODULATION OF REVERSE VOLTAGE LIMITED WAVEFORMS IN SPUTTERING DEPOSITION CHAMBERS

Номер: US20160215386A1

Автор: Stowell Michael Wayne

Принадлежит:

Modulation of a waveform applied to a cathode of a sputtering deposition chamber regulates the sputtering rate and density and kinetic energy of ions in a sputtering deposition chamber. A waveform may include a pulsed DC waveform with a modulated AC signal superimposed on the pulsed DC waveform. The DC waveform may have a reverse voltage period. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. One may modulate various properties of the waveform to increase or decrease sputtering rates and thin-film quality. 1. A method of controlling ions in a sputtering system that includes at least one cathode , the method comprising:generating a modulated power signal, wherein the modulated power signal includes a reverse voltage portion, the reverse voltage portion limited by a reverse voltage limit;providing the modulated power signal to the least one cathode.2. The method of claim 1 , wherein generating a modulated power signal comprises:generating an amplitude-modulated power signal.3. The method of claim 1 , wherein the reverse voltage limit is set at a voltage selected from the group consisting of:+10V, +25V, +50V, +60V, +70V, +80V, +90V, +100V, +110V, +120V, +130V, +140V, +150V, +160V, +170V, +180V, +190V, +200V, +210V, +220V, +230V, +240V, +250V, +260V, +270V, +280V, +290V, +300V, +310V, +320V, +330V, +340V, +350V, +360V, +370V, +380V, +390V, and +400V.4. The method of claim 1 , wherein generating a modulated power signal comprises:generating an pulse-width modulated power signal.5. The method of claim 1 , wherein generating a modulated power signal comprises:generating a pulse-amplitude modulated power signal.6. The method of claim 1 , further comprising:actively varying a characteristic of the modulated power signal while the sputtering system is sputtering to thereby impact film growth.7. The method of claim 1 , wherein the modulated power signal includes an AC signal.8. The method of claim ...

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Номер записи: 93

04-07-2019 дата публикации

Sputtering Cathode, Sputtering Device, and Method for Producing Film-Formed Body

Номер: US20190203346A1

Автор: Hiroshi Iwata, Ippei Sato, Keiichi Hashimoto, Naonori SHIBATA, Naoya Okada, Toshiyuki NEDU, Yuta TAKAKUWA

Принадлежит: Keihin Ramtech Co Ltd

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

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Номер записи: 94

04-08-2016 дата публикации

SPUTTERING APPARATUS

Номер: US20160225591A1

Автор: Crowley Daniel Theodore, German John Robert, JR. William A., MEREDITH, Morse Patrick Lawrence

Принадлежит:

A magnetron assembly for a rotary target cathode comprises an elongated support structure, a magnet bar structure movably positioned below the support structure, and a plurality of drive modules coupled to the support structure. The drive modules each include a motorized actuation mechanism operatively coupled to the magnet bar structure. A controller and battery module is coupled to the support structure and is in operative communication with the drive modules. The controller and battery module includes an electronic controller and at least one rechargeable battery. The battery is configured to energize each motorized actuation mechanism and the electronic controller. One or more power generation modules is coupled to the support structure and in electrical communication with the battery, such that electrical energy output from the power generation modules recharges the battery. 1. A magnetron assembly for a rotary target cathode , the magnetron assembly comprising:an elongated support structure;a magnet bar structure movably positioned below the support structure;a plurality of drive modules coupled to the support structure, the drive modules each including a motorized actuation mechanism operatively coupled to the magnet bar structure;a controller and battery module coupled to the support structure and in operative communication with the drive modules, the controller and battery module including an electronic controller and at least one rechargeable battery, the battery configured to energize each motorized actuation mechanism and the electronic controller; andone or more power generation modules coupled to the support structure and in electrical communication with the battery such that electrical energy output from the one or more power generation modules recharges the battery.2. The magnetron assembly of claim 1 , wherein the one or more power generation modules is configured to directly drive the motorized actuation mechanism in each of the drive modules.3. ...

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Номер записи: 95

23-10-2014 дата публикации

Glow Discharge Apparatus and Method with Lateral Rotating Arc Cathodes

Номер: US20140311895A1

Автор: Jllek Mojmir, Tibor Cselle

Принадлежит: Individual

To improve the result of a glow discharge process is disclosed to be performed in a Physical Vapor Deposition (PVD) coating apparatus comprising a door, at least 2 lateral rotating cathodes with targets. The apparatus is equipped by rotating shields or tube shutters ( 4 ). The method comprises the steps of operating the apparatus so that the arc of said second electrode ( 2 ) burns directly to said door. The rotary shield or tube shutter on a first electrode ( 1 ) is open and said rotary shield or tube shutter ( 4 ) on a second electrode ( 2 ) is closed. Then a positive potential is applied on said first electrode ( 1 ), so that a potential between said second electrode ( 2 ) and said first electrode ( 1 ) is applied. The positive potential applied on said first electrode ( 1 ) is selected so that the electron stream does not burn only against the door since the electrons being affected by the higher potential to said first electrode ( 1 ).

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Номер записи: 96

03-08-2017 дата публикации

Methods for igniting a plasma in a substrate processing chamber

Номер: US20170221685A1

Автор: Fuhong Zhang, Joung Joo Lee, Shouyin Zhang

Принадлежит: Applied Materials Inc

Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.

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Номер записи: 97

02-08-2018 дата публикации

BIASABLE FLUX OPTIMIZER / COLLIMATOR FOR PVD SPUTTER CHAMBER

Номер: US20180218889A1

Автор: INFANTE Anthony, Riker Martin Lee, Wang Zheng, Zhang Fuhong

Принадлежит:

In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit. 1. A collimator assembly , comprising: a first plurality of hexagonal apertures in a central region having a first aspect ratio;', 'a second plurality of hexagonal apertures in a peripheral region having a second aspect ratio less than the first aspect ratio; and', 'a third plurality of hexagonal apertures in a transitional region disposed between the central region and the peripheral region,', 'wherein the walls defining the third plurality of hexagonal apertures of the transitional region are cut along an angle to form a conical shape surrounding the central region, and', 'wherein the conical shape is defined by a circular edge formed by the walls of the transitional region; and, 'a honeycomb structure having walls defining and separating hexagonal apertures, wherein the hexagonal apertures include, 'a collimator portion, comprising a top ring;', 'a support ledge below the top ring, the support ledge extending radially outward; and', 'a cylindrical band extending downward from the support ledge to an elevation below the second plurality of hexagonal apertures, wherein the cylindrical band does not extend to an elevation below the first plurality of hexagonal apertures., 'a shield portion coupled ...

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Номер записи: 98

09-08-2018 дата публикации

PASTE METHOD TO REDUCE DEFECTS IN DIELECTRIC SPUTTERING

Номер: US20180223421A1

Автор: Wang Rongjun, Wang Xiaodong, WU Hanbing

Принадлежит:

Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation. 1. A method for performing pasting in a deposition chamber , comprising:depositing a tantalum (Ta) pasting layer over at least a portion of a first dielectric material layer formed by RF sputtering of a dielectric material target on at least an interior portion of the deposition chamber, the Ta pasting layer reducing particle defects caused by the first dielectric material layer.2. The method of claim 1 , further comprising:depositing a second dielectric material layer by RF sputtering a dielectric material target on at least a portion of the Ta pasting layer to further reduce Ta contamination of subsequent dielectric material deposition layers.3. The method of claim 1 , further comprising:flowing oxygen into the deposition chamber to form tantalum oxide on the Ta pasting layer to further reduce particle defects and to reduce Ta contamination of subsequent dielectric material deposition layers.4. The method of claim 3 , further comprising:exhausting the oxygen from the deposition chamber; anddepositing a second dielectric material layer on at least a portion of the tantalum oxide by RF sputtering a dielectric material target to further reduce Ta contamination of subsequent dielectric material deposition layers.5. The method of claim 3 , further comprising:selecting a dielectric material target before flowing ...

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Номер записи: 99

20-08-2015 дата публикации

PROCESSING APPARATUS

Номер: US20150235822A1

Автор: HIGASHISAKA Ryuji, MUTO Yoshihiro, Yamada Satoshi

Принадлежит: CANON ANELVA CORPORATION

The present invention provides a processing apparatus including a supply source including a first supply source and a second supply source arranged to respectively face a first surface of a substrate and a second surface on an opposite side to the first surface and configured to supply a material to apply a process to the substrate, a shield member including a first shield provided around the first supply source and a second shield provided around the second supply source, the first shield and the second shield being arranged to sandwich the substrate, and a moving device configured to move the first shield and the second shield to set one of a close state in which the first shield and the second shield are close to each other and a separate state in which the first shield and the second shield are separate from each other. 1. A processing apparatus comprising:a vacuum vessel;a supply source including a first supply source and a second supply source arranged to respectively face a first surface of a substrate conveyed into the vacuum vessel and a second surface on an opposite side to the first surface and configured to supply a material to apply a process to the substrate;a shield member including a first shield provided around the first supply source and a second shield provided around the second supply source, the first shield and the second shield being arranged to sandwich the substrate; anda moving device configured to move the first shield and the second shield to set one of a close state in which the first shield and the second shield are close to each other and a separate state in which the first shield and the second shield are separate from each other,wherein the shield member forms process spaces between the first supply source and the substrate and between the second supply source and the substrate when the moving device moves the first shield and second shield to set the close state, andthe process is applied to the first surface and the second surface ...

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Номер записи: 100