МИШЕНЬ ДЛЯ ИСКРОВОГО ИСПАРЕНИЯ С ПРОСТРАНСТВЕННЫМ ОГРАНИЧЕНИЕМ РАСПРОСТРАНЕНИЯ ИСКРЫ

Изобретение относится к мишени для электродугового источника (ARC) с первым телом (3) из подлежащего испарению материала, которое содержит по существу в одной плоскости предусмотренную для испарения поверхность, при этом поверхность в этой плоскости окружает центральную зону. В центральной зоне предусмотрено выполненное в виде диска второе тело (7), изолированное от первого тела (3) таким образом, что второе тело (7) по существу не может предоставлять электроны для сохранения искры. Технический результат - повышение стабильности процесса и упрощение технического обслуживания. 3 н. и 7 з.п. ф-лы, 4 ил.

КОМПОНОВОЧНАЯ СХЕМА И СПОСОБ ИОННО-ПЛАЗМЕННОГО РАСПЫЛЕНИЯ ДЛЯ ОПТИМИЗИРОВАННОГО РАСПРЕДЕЛЕНИЯ ПОТОКА ЭНЕРГИИ

Изобретение относится к компоновочной схеме ионно-плазменного распыления, вакуумной установке для нанесения покрытий и способу для осуществления способов нанесения покрытий магнетронным распылением импульсами большой мощности. Компоновочная схема ионно-плазменного распыления содержит распыляемые или частично распыляемые катоды и генераторы Gjмощности ионно-плазменного распыления, переключатели Sbjна мостовой схеме для коммутации отбора мощности Pjсоответствующего генератора Gjмощности ионно-плазменного распыления и импульсные переключатели Spiдля распределения соответствующих отборов мощности Pjна соответствующие распыляемые катоды Ti. Компоновочная схема ионно-плазменного распыления выполнена с возможностью ее эксплуатации по меньшей мере в двух различных вариантах коммутации. Технический результат - обеспечение возможности варьировать плотность мощности ионно-плазменного распыления, не приводя к потере производительности. 3 н. и 14 з.п. ф-лы, 7 ил.

МИШЕНЬ ДЛЯ ИСКРОВОГО ИСПАРЕНИЯ С ПРОСТРАНСТВЕННЫМ ОГРАНИЧЕНИЕМ РАСПРОСТРАНЕНИЯ ИСКРЫ

... 1. Мишень для электродугового источника (ARC) с первым телом (3) из подлежащего испарению материала, которое, по существу, в одной плоскости содержит предусмотренную для испарения поверхность, при этом поверхность в этой плоскости окружает центральную зону, отличающаяся тем, что в центральной зоне предусмотрено предпочтительно выполненное в виде пластины второе тело (7), электрически изолированное от первого тела (3) таким образом, что второе тело (7), по существу, не может предоставлять электроны для сохранения искры.2. Мишень по п. 1, отличающаяся тем, что первое тело (3) содержит в центральной зоне углубление (5), в котором расположено второе тело (7) и закреплено с помощью изоляционного штифта (9), при этом расстояние между первым телом (3) и вторым телом (7) принимает одно или несколько значений от 1,5 мм до 3,5 мм включительно.3. Мишень по п. 2, отличающаяся тем, что тело (7) по меньшей мере на поверхности, которая выступает из углубления (5), имеет материал, который соответствует ...

ВЫСОКОПРОИЗВОДИТЕЛЬНЫЙ ИСТОЧНИК ДЛЯ ПРОЦЕССА РАСПЫЛЕНИЯ

... 1. Способ создания плазменного разряда с плотностью тока разряда, по меньшей мере в некоторых областях, локально свыше 0,2 А/см, включающий следующие этапы:- обеспечение блока энергоснабжения с предварительно заданной максимальной мощностью;- обеспечение по меньшей мере двух магнетронных источников распыляемого материала с предварительно заданной в каждом случае зоной распыления и предварительно заданным термическим пределом, причем зона распыления выполнена настолько малой, что при воздействии максимальной мощности от блока энергоснабжения соответствующий в каждом случае магнетронный источник распыляемого материала плотность тока разряда составляет свыше 0,2 А/см;- подачу энергии с помощью блока энергоснабжения с первой мощностью на первый из по меньшей мере двух магнетронных источников распыляемого материала в течение первого интервала времени, причем первая мощность выбирается достаточно высокой, чтобы на магнетронном источнике распыляемого материала, по меньшей мере в одной области, ...

Kathodenzerstäubung, Bevorzugt von Isolatoren auf leitenden Targets

Method for protecting tube target of tube magnetron from corrosion, involves maintaining potential difference between magnet system and tube target so that potential difference is smaller than potential barrier

The method involves operating the tube target (1) as a cathode. The tube target comprises a rotatable base tube (11) with a target material (12). The tube target is cooled by a cooling circuit with a cooling agent, where the cooling circuit is arranged in the inner space of the tube target. A potential difference is maintained between a magnet system (4) and the tube target so that the potential difference is smaller than the potential barrier for electrochemical corrosion reactions at the surface of the base tube standing in contact with the cooling agent. An independent claim is included for an arrangement for protecting a tube target of a tube magnetron from corrosion.

Beschichtungsverfahren

Ein Verfahren zum Vorbehandeln und Beschichten von Körpern unter Verwendung von Magnetronsputtern mit mindestens zwei HIPIMS-Leistungsversorgungen in einer Beschichtungskammer, dadurch gekennzeichnet, dass – eine erste HIPIMS-Leistungsversorgung (1) an eine Magnetronsputterquelle (3) angeschlossen wird, – eine zweite HIPIMS-Leistungsversorgung (2) als Versorgung an die vorzubehandelnden und zu beschichtenden Körper angeschlossen wird, und – die HIPIMS-Leistungsversorgungen synchronisiert werden, – wobei zunächst eine Übergangschicht erzeugt wird, indem Metallionen aus der Magnetronsputterquelle (3) in die Körper implantiert werden – und anschließend eine Haftschicht aufgebracht wird, die ebenfalls Metallionen aus dem Magnetron (3) enthält. – und anschließend eine kohlenstoffbasierte Schicht erzeugt wird, die Wasserstoff und/oder Stickstoff enthält.

Method and apparatus for coating substrates in a vacuum chamber,having a device for detecting and suppressing undesirable arcs

PROCEDURE FOR THE PRODUCTION OF A HEATDAMMING, HIGH TRANSPARENCIES OF LAYER SYSTEM AND WITH THIS PROCEDURE MANUFACTURE LAYER SYSTEM

DEVICE FOR COATING SUBSTRATES IN THE VACUUM

PROCEDURE AND DEVICE FOR PVD COATING

PROCEDURE FOR CLEANING A SUBSTRATE AND A DEVICE FOR THE EXECUTION OF THE PROCEDURE

A method and apparatus for magnetically enhanced sputtering

CATHODIC SPUTTERING IN A REACTIVE GAS

RF SPUTTERING APPARATUS INCLUDING MULTI-NETWORK POWER SUPPLY

For use in sputtering from one or more large area targets, as large as 50 cm2 to several square meters, a power transfer network includes an inductive element capable of being tapped along its length, such as a linear line section and a tuning capacitor with the source of high frequency energy in the megahertz range, each of the source and the electrode system being connectively tapped into a suitable location along the inductive element. A string of at least three resonant networks is arranged between the high frequency r.f. source and the sputtering electrodes and these networks transform impedance and voltage from one end of the string at the source to different values and conditions at the other end of the string where they are tied to the electrodes in order to achieve a maximum of overall power transfer efficiency.

USE OF MULTIPLE ANODES IN A MAGNETRON FOR IMPROVING THE UNIFORMITY OF ITS PLASMA

In one group of embodiments, two or more small anodes are spaced apart from one another in a magnetron, with some aspect of their electrical power being individually controlled in a manner to control a density profile across a plasma. In another group of embodiments, the same effect is obtained by mechanically moving one or more small anodes or anode masks. When used in a magnetron having either a rotating cylindrical cathode or a stationary planar cathode and designed to sputter films of material onto a substrate, the uniformity of the rate of deposition across the substrate is improved. Also, adverse effects of sputtering dielectric materials are reduced.

Procedure and device for coating substrates in a vacuum chamber, with a mechanism for the recognition and suppression of unwanted arcs.

Procedure and arrangement for the redundant anode sputtering with a dual anode arrangement.

Der Erfindung, die ein Verfahren, bei dem zwei Anoden entgegengesetzt zueinander abwechselnd als Anode der Plasmaentladung, d.h. als Elektrode mit positivem Potential und als Kathode zur Selbstreinigung, d.h. als Elektrode mit negativem Potential betrieben werden und die Kathode der Plasmaentladung wiederkehrend kurzzeitig umgepolt wird, und eine Anordnung umfassend eine Kathode und eine erste und eine zweite Anode, die mittels einer H-Brückenschaltung mit Spannung versorgt werden, betrifft, liegt die Aufgabe zugrunde, die Wirkung des redundanten Anodensputterns mit Dual-Anoden zu verbessern und die Bauelementesicherheit zu erhöhen. Dies wird dadurch gelöst, dass eine DC-Stromversorgung als Pulsstromversorgung ausgebildet ist, dass die Umpolung der Kathodenspannung aus der Pulsstromversorgung bewirkt wird, zu jedem Zeitpunkt mindestens eine Anode auf positivem Potential und zeitweise während einer Ätzzeit die andere Anode auf negativem Potential liegt und die H-Brückenschaltung so mit der ...

DC power supply device, the direct-current power supply device control method

With auxiliary frequency and the harmonic of the RF impedance matching network

SPRAY CLEANER COMPRISING A FOOD WHILE RUNNING SEVERAL NETWORKS

PHYSICAL VAPOR DEPOSITION REACTOR WITH CIRCULARLY SYMMETRIC RF FEED AND DC FEED TO THE SPUTTER TARGET

PHYSICAL VAPOR DEPOSITION METHOD WITH A SOURCE OF ISOTROPIC ION VELOCITY DISTRIBUTION AT THE WAFER SURFACE

... 작업물 위로의 물질의 플라즈마 강화 물리적 기상 증착에서, 금속 타겟은 작업물의 직경 미만의 타겟-투-작업물 갭을 가로질러 작업물에 대향한다. 캐리어 가스가 챔버 내에 유입되고, 챔버 내의 가스 압력은 임계 압력을 초과하게 유지되는데, 임계 압력에서 평균 자유 경로는 갭의 5% 미만이다. VHF 발생기로부터의 RF 플라즈마 소스 전력이 타겟에 인가되어 타겟에 용량 결합 플라즈마를 발생시키는데, VHF 발생기는 30 MHz를 초과하는 주파수를 갖는다. 플라즈마는 VHF 발생기의 주파수에서 작업물을 통하여 제 1 VHF 접지 리턴 경로를 제공함으로써 갭을 가로질러 작업물까지 연장된다.

APPARATUS FOR COATING SUBSTRATEA IN A VACUUM

이동 가능한 스퍼터 조립체 및 전력 파라미터들에 대한 제어를 이용하여 기판을 코팅하기 위한 장치 및 방법

... 실시예들에 따르면, 진공 프로세스 챔버에서 기판을 코팅하기 위한 장치 및 방법이 제공된다. 방법은, 제 1 전력이 스퍼터 소스에 인가되는 동안 스퍼터 소스로부터 스퍼터 재료를 스퍼터링하는 단계를 포함하고, 스퍼터 소스는 기판에 대해 제 1 포지션에 로케이팅된다. 방법은, 스퍼터링 동안 진공 챔버에 대해 병진 운동(translational movement)으로 스퍼터 소스를 이동시키는 단계를 포함한다. 방법은, 제 2 전력이 스퍼터 소스에 인가되는 동안 스퍼터 소스로부터 스퍼터 재료를 스퍼터링하는 단계를 더 포함하고, 스퍼터 소스는 기판에 대해 제 2 포지션에 로케이팅된다.

SPUTTERING SYSTEM AND METHOD INCLUDING AN ARC DETECTION SYSTEM

PHYSICAL VAPOR DEPOSITION REACTOR WITH CIRCULARLY SYMMETRIC RF FEED AND DC FEED TO THE SPUTTER TARGET

PHYSICAL VAPOR DEPOSITION METHOD WITH A SOURCE OF ISOTROPIC ION VELOCITY DISTRIBUTION AT THE WAFER SURFACE

POWER FEEDING MECHANISM, ROTARY BASE DEVICE AND SEMICONDUCTOR PROCESSING EQUIPMENT

Substrate processing apparatus and film forming apparatus

DUAL MAGNETRON SPUTTERING POWER SUPPLY AND MAGNETRON SPUTTERING APPARATUS

A dual magnetron sputtering power supply for use with a magnetron sputtering apparatus having at least first and second sputtering cathodes for operation in the dual magnetron sputtering mode, there being a means for supplying a flow of reactive gas to each of said first (1) and second (4) cathodes via first (12) and second (14) flow control valves each associated with a respective one of said first and second cathodes and each adapted to control a flow of reactive gas to the respectively associated cathode, the power supply having, for each of said first and second cathodes a means for deriving a feed-back signal relating to the voltage prevailing at that cathode, a control circuit for controlling the flow of reactive gas to the respectively associated cathode by controlling the respective flow control valve and adapted to adjust the respective flow control valve to obtain a voltage feedback signal from the respective cathode corresponding to a set point value set for that cathode. Also ...

METHODS AND APPARATUS FOR GENERATING STRONGLY-IONIZED PLASMAS WITH IONIZATIONAL INSTABILITIES

A strongly-ionized plasma generator includes a chamber (104) for confining a feed gas (108). An anode (124) is positioned inside the chamber. A cathode assembly (116) is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply (102) is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches (558) that are controlled by micropulses generated by drivers (557) At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.

DEPOSITION APPARATUS AND METHOD

An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from the surfaces of the targets and other components (3) provide a single ignition of the targets and eliminate target ignitions thereafter and (4) reduce the substrate temperature by using low energy ("cold") electrons from a plasma discharge to produce a low energy current. The asymmetry may result from amplitude differences between the voltage in alternate half cycles and the voltage in the other half cycles. A second alternating voltage (preferably radio frequency) modulates the asymmetric alternating voltage to provide the smooth plasma ignition. The different voltage amplitudes applied to each of the targets are also instrumental in providing for a substantially constant deposition thickness at the different positions on the ...

PHYSICAL VAPOR DEPOSITION OF SEMICONDUCTING AND INSULATING MATERIALS

L'invention se rapporte à un appareil conçu pour le dépôt de matière semi-conductrice, isolante et notamment de matière à constante diélectrique élevée, du type titanate de baryum strontium, sur un substrat par pulvérisation réactive. Ledit appareil comporte une chambre pour dépôt en phase vapeur comportant une source d'énergie en courant continu pulsé, bipolaire, asymétrique, qui fournit une première polarisation à une cible et une seconde polarisation à l'élément de support du substrat dans la chambre. La source d'énergie à courant continu pulsé délivre une forme d'onde électrique comprenant une tension de dépôt négative qui attire les ions argon de manière à provoquer la pulvérisation à partir de la cible et une tension inverse de neutralisation positive, faible, qui provoque la neutralisation des charges de la cible, ce qui empêche la formation d'arcs et de micro-arcs électriques à la surface de la cible. De préférence, la première polarisation est synchronisée à la seconde polarisation ...

RF IMPEDANCE MATCHING NETWORK WITH SECONDARY DC INPUT

Embodiments of the disclosure may provide a matching network for a physical vapor deposition system. The matching network may include an RF generator coupled to a first input of an impedance matching network, and a DC generator coupled a second input of the impedance matching network. The impedance matching network may be configured to receive an RF signal from the RF generator and a DC signal from the DC generator and cooperatively communicate both signals to a deposition chamber target through an output of the impedance matching network. The matching network may also include a filter disposed between the second input and the output of the impedance matching network.

TOPOGRAPHICALLY PRECISE THIN FILM COATING SYSTEM

Both methods and apparatus for achieving topologically precise thin film coating. The system focuses on coating systems to create compact discs using DC magnetron sputtering to avoid the occurrence of mousebites or visual imperfections at the termination edge on a masked substrate. Circuit elements are added to a switch-mode power supply (4) which act to substantially reduce reverse currents after the signal is conditioned by rectifying (22) and filtering (23) a switched output. Fast acting diodes (25), placed in either series or parallel arrangements within the circuit involving the cathode (5) and anode (6), are used with a low energy storage switch-mode power supply (4) to completely eliminate the occurrence of mousebites (15) on the aluminum coating or the polycarbonate substrate (10) of the compact disc.

Method and device of arc detection in a plasma process

HIGH PEAK POWER PLASMA PULSED SUPPLY WITH ARC HANDLING

There is provided by this invention novel magnetron sputtering apparatus that is generally comprised of a pulsed do power supply capable of delivering peak powers of 0.1 megaWatts to several megaWatts with a peak power density greater than 1 kW/cm2. The power supply has a pulsing circuit comprised of an energy storage capacitor and serially connected inductor with a switching means for disconnecting the pulsing circuit from the plasma and recycling the inductor energy back to the energy storage capacitor at the detection of an arc condition. The energy storage capacitor and the serially connected inductor provide an impedance match to the plasma, limits the current rate of rise and peak magnitude in the event of an arc, and shapes the voltage pulses to the plasma.

Device for suppressing arcing in cathode sputtering installations

METHOD AND APPARATUS FOR REGULATING COATED SPEED BY COMPUTERCONTROL IN SPUTTERING APPARATUS

ОСАЖДЕНИЕ ИМПУЛЬСНЫМ МАГНЕТРОННЫМ РАСПЫЛЕНИЕМ С ПРЕДЫОНИЗАЦИЕЙ

... 1. Способ осаждения по меньшей мере одного вещества на подложку (11а) в магнетронном реакторе (1), оснащенном катодом (МС) магнетрона, в ходе которого указанное вещество испаряют магнетронным распылением, используя газ, ионизируемый в импульсном режиме путем подачи на катод (МС) магнетрона импульсов (VP) основного напряжения, отличающийся тем, что перед подачей каждого импульса (VP) основного напряжения газ предыонизируют, обеспечивая тем самым генерацию импульсов (СР) тока, время (Тd) спада которых после отсечки импульсов (VP) основного напряжения меньше 5 мкс. 2. Способ по п.1, отличающийся тем, что время (Td) спада импульса (СР) тока, после отсечки импульса (VP) основного напряжения, меньше 1 мкс. 3. Способ по п.1, отличающийся тем, что степень ионизации пара, измеряемая вблизи подложки, выше 10% и предпочтительно выше 70%. 4. Способ по любому из пп.1-3, отличающийся тем, что газ предыонизируют путем подачи напряжения предыонизации на катод (МС) магнетрона. 5. Способ по п.4, отличающийся ...

KONTINUIERLICHE ABSCHEIDUNG EINES ISOLIERENDEN MATERIALS MITTELS MEHRERER UNTER ALTERNIEREND POSITIVER UND NEGATIVER SPANNUNG STEHENDER ANODEN

Magnetronplasmaanlage

Die Erfindung betrifft eine Sputteranlage, umfassend eine erste Spannungsquelle und eine zweite Sapnnungsquelle, deren zwei Ausgänge miteinander parallel geschaltet sind, wobei in einer Verbindung (14) der ersten Ausgänge der beiden Spannungsquellen (10, 12, 38) zwei gegeneinander geschaltete Dioden (D1, D2) angeordnet sind, zwischen denen ein Abgriff (18) angeordnet ist, der mit einem ersten Anschluss (21) für die Stromzufuhr in eine Plasmakammer (22) verbunden ist und wobei der zweite Anschluss (23) für die Stromzufuhr in die Plasmakammer (22) mit der Verbindung (16) der anderen Ausgänge der Spannungsquellen (10, 12, 38) verbunden ist oder die beiden Spannungsquellen (10) oder diesen nachgeordnete elektronische Schalter (82, 84) durch eine gemeinsame Steuerung (34) synchronisiert angesteuert sind. Die Erfindung betrifft ebenfalls eine Sputteranlage, umfassend wenigstens eine Spannungsquelle (10, 12, 38) für die Stromzufuhr in eine Plasmakammer, in der eine die Kathode (20, 50, 52) umgebende ...

Verfahren zum Betrieb einer Rohrmagnetronanordnung zum Sputtern

Verfahren zum Betrieb einer Rohrmagnetronanordnung zur Beschichtung einem rotierenden Rohrtarget gegenüber liegender und an dem Rohrtarget vorbei bewegter Substrate mittels Sputtern indem über der Targetoberfläche des Rohrtargets, welches als Kathode geschaltet ist, und mittels einer benachbart zum Rohrtarget angeordneten Anode fortwährend ein Plasma gezündet wird, welches der Zerstäubung des Targetmaterials dient, und der Zündpunkt des Plasmas mittels eines innerhalb des Rohrtargets angeordneten, fixen Magnetsystems auf eine in sich geschlossene, relativ zur Achse des Rohrtargets fixe, längs zur Achse des Rohrtargets erstreckende und an dessen Enden Umkehrbereiche aufweisende Bahn gezwungen wird, die nachfolgend als Racetrack bezeichnet ist, dadurch gekennzeichnet, dass ein Magnetfeld erzeugt wird, dessen Stärke der zur Targetoberfläche parallelen Komponente der magnetischen Flussdichte im Bereich zwischen 20 und 40 mT liegt, wobei die parallele Komponente der Flussdichte im Umkehrbereich ...

Einrichtung zum Behandeln von Substraten

Verfahren und Gerät zur Kathodenzerstäubung.

Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern

The aim of the invention is to suppress sparking during high-frequency sputtering. A high-frequency generator (5) is provided which has a controlled switching unit (13) that is connected upstream in relation to the output of said generator. A high-frequency supply signal that is generated at the output of the high-frequency generator is stopped for plasma discharge (PL) for a short time and by means of said switching unit.

Method and apparatus for sputter deposition

An sputter deposition apparatus 600 comprises a substrate guide 110a, 110b, 118 for guiding a substrate 116 along a curved path, a target portion 606 for supporting target material 608, a deposition zone 614 defined between the target portion and substrate guide, biasing means 122 for applying electrical bias to the target material and a confining arrangement comprising one or more magnetic elements 104a, 104b for providing a magnetic field to confine plasma 112 in the deposition zone, wherein the confining magnetic field comprises magnetic field lines (figure 2) that follow the curved path to confine said plasma around the curved path. The plasma is preferably confined in the form of a curved sheet. A method of sputter deposition using the apparatus of the invention may comprise providing a target material comprising at least one of lithium, cobalt, lithium oxide, cobalt oxide or lithium cobalt oxide, wherein the method may be used to form a cathode layer of an energy storage device, such ...

SOURCE OF PLASMA WITH SEGMENTED MAGNETRON CATHODE

CURRENT CHANGE DELIMITATION DEVICE

PROCEDURE AND DEVICE FOR THE REGULATION OF THE REACTIVE LAYER SEPARATION ON SUBSTRATES OF MEANS MAGNETRONKATODEN.

ELECTRICAL TENDER UNIT AND PROCEDURE FOR THE REDUCTION OF THE SPARKING WHEN SPUTTERING

TARGET FOR SPARK VAPORIZATION WITH PHYSICAL LIMITING OF THE PROPAGATION OF THE SPARK

The present invention relates to a target for an ARC source having a first body (3) of a material to be vaporized, which essentially comprises in one plane a surface which is intended to be vaporized, wherein the surface surrounds in this plane a central area, characterized in that in the central area a second body (7) is provided, which is preferably in the form of a disk and is electrically isolated from the first body (3), in such a way that the second body (7) can essentially provide no electrons for maintaining a spark.

POWER DISTRIBUTOR FOR DEFINED SEQUENTIAL POWER DISTRIBUTION

The present invention relates to a power distributor that is capable of distributing the high power from a DC generator to more than two targets sequentially and without the power output of the DC generator being interrupted. Furthermore, the invention relates to a sputter source that comprises the power generator described above.

PHYSICAL VAPOR DEPOSITIION WITH IMPEDANCE MATCHING NETWORK

AC 전력 커넥터, 스퍼터링 장치, 및 이에 대한 방법

... 디바이스와 AC 전력 공급부를 연결시키기 위한 AC 전력 커넥터가 제공된다. AC 전력 커넥터는, AC 전력 공급부와 연결가능한 적어도 하나의 제 1 엘리먼트, 및 디바이스와 연결가능한 적어도 하나의 제 2 엘리먼트를 포함하며, 제 1 엘리먼트 및 제 2 엘리먼트들은, 캐패시턴스를 정의하기 위해, 서로에 대하여 제 1 거리로 배열되고, 적어도 하나의 제 1 엘리먼트 및 적어도 하나의 제 2 엘리먼트는 서로에 대하여 회전가능하고, 제 1 엘리먼트 및 제 2 엘리먼트는, 적어도 하나의 제 1 엘리먼트 및 적어도 하나의 제 2 엘리먼트 사이의 AC 전력의 전달을 위해 구성된다.

가변 용량성 튜너와 피드백 회로를 이용한 물리적 기상 증착

... 페디스털 상에 지지되는 웨이퍼 상에서의 플라즈마 프로세싱을 수행하기 위한 장치들 및 방법들이 제공된다. 장치는 웨이퍼가 지지될 수 있는 페디스털, 가변 커패시턴스를 갖는 가변 커패시터, 가변 커패시터에 부착된, 가변 커패시터의 커패시턴스를 가변시키는 모터, 모터에 연결된, 모터로 하여금 회전하도록 하는 모터 제어기, 및 페디스털에 연결된 가변 커패시터로부터의 출력부를 포함할 수 있다. 가변 커패시터의 원하는 상태는 프로세스 제어기 내에서의 프로세스 레시피와 연관된다. 프로세스 레시피가 실행될 때, 가변 커패시터는 원하는 상태에 놓인다.

FINAL BLOCK FOR A SYSTEM OF MAGNETRON WITH A ROTARY TARGET.

Pour résoudre le problème consistant à fournir un bloc terminal amélioré dans lequel l'échauffement par des courants induits de Foucault, qui peuvent survenir par exemple lors de la pulvérisation cathodique à courant alternatif, est nettement réduit par rapport aux blocs terminaux connus, il est proposé un bloc terminal pour un système de magnétron avec une cible rotative qui comprend un boîter de bloc terminal avec une surface de raccordement pour installer le bloc terminal sur un dispositif de support, avec un palier rotatif pour le montage à rotation de la cible rotative et avec au moins un dispositif de conduction de courant qui conduit le courant à travers le boîter de bloc terminal quand le bloc terminal fonctionne, le boîtier de bloc terminal étant conçu de telle manière que chaque trajet de courant entourant le dispositif de conduction de courant dans le boîter de bloc terminal présente une interrupton à au moins un endroit.

A method and apparatus for magnetically enhanced sputtering

Endblock for a magnetron device with a rotatable target

To achieve an improved end block, in which heating by induction eddy currents, which may occur during AC sputtering, for example, is significantly reduced relative to known end blocks, an end block for a magnetron configuration having a rotating target comprises an end block housing having an attachment surface for attaching the end block on a support apparatus, a pivot bearing for rotatable mounting of the rotating target, and at least one current conduction apparatus which conducts current through the end block housing in operation of the end block. The end block housing is implemented so that each current path in the end block housing which encloses the current conduction apparatus has an interruption at least one point.

Power supply with flux-controlled transformer

There is provided by this invention an apparatus and method for generating voltage pulses to first and second magnetron devices in a plasma chamber. An isolation transformer is connected to a pulsed DC power supply having a flux sensor, such as a Hall effect sensor, in close proximity to its air gap to monitor the transformer flux. A control circuit is connected to the flux sensor to control the duty cycle of the transformer by controlling the flux of the transformer such that the maximum and minimum peak transformer fluxes are equal in magnitude and opposite in sign to prevent saturation.

Power supply having combined regulator and pulsing circuits

A combined regulator and pulsing circuit may comprise a first diode having a cathode that is electrically connected to a positive terminal of a supply of direct current and to a first output terminal of the combined regulator and pulsing circuit. A first switching device is electrically connected between the anode of the first diode and a negative terminal of the supply of direct current. An inductor is electrically connected between the anode of the diode and a second output terminal of the combined regulator and pulsing circuit. The first plate of a capacitor is electrically connected to the first output terminal, and a second switching device is electrically connected between the second plate of the capacitor and the second output terminal. A control system is operatively associated with the first and second switching devices and operates the first and second switching devices between the conducting and non-conducting states.

RF impedance matching network with secondary frequency and sub-harmonic variant

Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.

Arc source

Die Erfindung betrifft eine Arcquelle mit einem Target und zumindest einer Gegenelektrode sowie einer am Targetangeschlossenen Stromversorgungseinheit. Die Stromversorgungseinheit umfasst zumindest eine erste gepulste Hochstromversorgung (18) sowie eine weitere Stromversorgung (13'), wobei zumindest die erste gepulste Hochstromversorgung (18) oder zumindest die weitere Stromversorgung (13') zwischen Target und einer das Target umfassenden Elektrode geschaltet ist.

Methods and apparatus of arc prevention during RF sputtering of a thin film on a substrate

Methods of arc prevention during sputtering of a thin film from a semiconducting target 104 onto a substrate 12 are provided. An alternating current (e.g., having a frequency of about 500 kHz to 15 MHz) can be applied from an electrical power supply 102 to the semiconducting target 104 to form a plasma field 110 between the substrate 12 and the semiconducting target 104. This alternating current can be temporarily interrupted for a time sufficient to sustain the plasma field 110 between the substrate 12 and the semiconducting target 104 to inhibit arc formation during sputtering. Sputtering systems are also generally provided for arc prevention during sputtering of a thin film from a semiconducting target 104 onto a substrate 12.

Apparatus for depositing thin layers on a substrate

Apparatus for applying thin layers to a substrate The apparatus includes a current supply unit connected to a cathode (7) with a target (6) in a vacuum chamber (5). Sputtered particles from the target are deposited on a substrate (8) facing the target. The apparatus has a measuring sensor (3), in particular, a measuring in the form of a potentiometric measuring electrode. This electrode compares by means of a reference electrode the proportion of a gas in the chamber (5) or in a line (17) with a reference gas or a solid substituting the reference electrode. The resultant signal is fed to a control unit (14) controlling the current supply generator.

РАСПРЕДЕЛИТЕЛЬ МОЩНОСТИ ДЛЯ ОПРЕДЕЛЕННОГО ПОСЛЕДОВАТЕЛЬНОГО РАСПРЕДЕЛЕНИЯ МОЩНОСТИ

... 1. Распределитель мощности, выполненный с возможностью последовательно и без перерыва отдачи мощности распределять, по существу, постоянную мощность генератора постоянного тока на более чем две мишени A, B, C … X, отличающийся тем, что распределитель мощности содержит схему, соединяющую выход генератора постоянного тока со всеми более чем двумя мишенями A, B, C ,…, X, а другой выход генератора постоянного тока после омического резистора Rразветвляется в соответствии с числом мишеней, и каждая мишень A, B, C ,…, X соединена с одной из ветвей, причем ветви содержат соответственно по одному соотнесенному с мишенью переключателю S, S, S,…, S, посредством которых может прерываться линия, ведущая к соотнесенной мишени.2. Распределитель мощности по п. 1, отличающийся тем, что между другим выходом генератора постоянного тока и омическим резистором Rпредусмотрен переключатель S.3. Распределитель мощности по п. 2, отличающийся тем, что распределитель мощности имеет прямое соединение между одним выходом ...

Verfahren zur Herstellung von Schichten

Magnetron-Endblock und Vakuumdrehdurchführung

Vakuumdrehdurchführung, umfassend einen an einem rotierenden Teil (1) befestigten, mit dem rotierenden Teil (1) synchron umlaufenden Rotorring (7) und einen ebenfalls mit dem rotierenden Teil (1) synchron umlaufenden Gleitdichtring (3), der durch eine erste Nebendichtung (5) gegenüber dem Rotorring (7) abgedichtet ist, so dass der Rotorring (7), die erste Nebendichtung (5) und der Gleitdichtring (3) mit dem rotierenden Teil (1) umlaufen, und einen in einem stationären Teil (2) stationär angeordneten, d.h. stillstehenden Statorring (8) und einen Gegendichtring (4), der durch eine zweite Nebendichtung (6) gegenüber dem Statorring (8) abgedichtet ist, so dass der Statorring (8), die zweite Nebendichtung (6) und der Gegendichtring (4) stillstehen, dadurch gekennzeichnet, dass der Gleitdichtring (3) und der Gegendichtring (4) aus technischer Keramik gefertigt sind.

Vorrichtung zum Beschichten von Substraten im Vakuum

Arc control and switching element protection for pulsed DC power supply

REACTIVE CATHODIC SPUTTERING ONE METALLES of the GROUP of 4A AT HIGH SPEED.

PROCEDURE AND DEVICE FOR ARCERKENNUNG DURING A PLASMA PROCESS

CURRENT SUPPLY DEVICE TO SPUTTERING AND SPUTTERING DEVICE, WHICH USE THESE

RAPID RATE REACTIVE SPUTTERING OF A GROUP IVB METAL

CURRENT CHANGE LIMITING DEVICE

In a method of limiting the current (I out) flowing between a plasma chamber (3) and a power supply (2), wherein the current change di/dt is limited if the current exceeds a predetermined current by a by a current change limiting device (7, 40) which is provided in the current path between the power supply (2) and the plasma chamber (3).

HIGH-POWER SPUTTERING SOURCE

The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

METHOD OF AN APPARATUS FOR SPUTTERING

Sputtering method

When sputtering is carried out in which a number of targets are aligned, and a number of bipolar pulse power supplies apply power in the form of bipolar pulses to the aligned targets, susceptibility to the effects of switching noise is small, and power can be accurately applied to the targets by using a simple control. A sputtering method in which each target is sputtered by switching on and off each of switching elements (SW1) to (SW4) of a bridge circuit (52) connected to the positive and negative DC output terminals from the DC power supplies to supply power in the form of bipolar pulses to the targets forming a pair, wherein the switching elements are switched on and off in the short-circuited state of the switching element (SW0) for short circuiting the output which is provided between the positive and negative DC outputs from the DC power supplies, and the switching timings of the switching elements for short circuiting the output are mutually offset for each bridge circuit.

PROCESS AND APPARATUS OF REGULATION DEPOSIT RATE Of a THIN FILM IN a DEVICE OF COATING BY PULVERIZATION Of a PLASMA

PLASMA SOURCE WITH SEGMENTED MAGNETRON CATHODE

A sputtering apparatus includes a chamber, an anode, a cathode assembly comprising target material, and a magnet. A platen supports a substrate. A power supply is electrically connected to the cathode assembly and generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

DEPOSITION BY MAGNETRON CATHODIC PULVERIZATION IN A PULSED MODE WITH PREIONIZATION

The invention relates to the deposition, in a magnetron reactor (1) fitted with a magnetron cathode (CM), of at least one material on a substrate (11a), said material being vaporized, by means of magnetron cathodic pulverization, with the aid of a gas which is ionized in a pulsed mode. In order to promote the formation of high current pulses of a short duration, while avoiding the formation of arcs and enabling efficient ionization of the pulverized vapor, the gas is preonized prior to application of the main voltage pulse to the magnetron cathode (CM) such that it is possible to generate current pulses (IC) whose duration of decline (Td) is less than 5?s after interruption of the main voltage pulse (IT).

Preferential sputtering of insulators from conductive targets

Pulses of a positive voltage are superimposed onto negative dc sputtering current that is applied to the target of a dc sputtering process to create a reverse bias. This charges insulating deposits on the target to the reverse bias level, so that when negative sputtering voltage is reapplied to the target, the deposits will be preferentially sputtered away. The reverse bias pulses are provided at a low duty cycle, i.e., with a pulse width of 0.25 to 3 microseconds at a pulse rage of 40 to 200 KHz. This technique reduces or eliminates the sources for arcing. A circuit arrangement for reverse biasing provides the forward (negative) dc sputtering power as a current source, and provides the pulses of reverse (positive) voltage as a voltage source.

Sputtering Arrangement and Sputtering Method for Optimized Distribution of the Energy Flow

The present disclosure relates to a sputtering arrangement, a vacuum coating system, and a method for carrying out HiPIMS coating methods; the sputtering arrangement has at least two different interconnection possibilities and the switch to the second interconnection possibility, in which two sputtering sub-assemblies are operated simultaneously with high power pulses, achieves a productivity gain. 18-. (canceled)9. A sputtering arrangement comprising:{'sub': i', 'j, 'a number N of sputtering cathodes or sub-cathodes Twith i=1 to N, and a number n of sputtering power generators Gwith it j=1 to n, wherein N is a whole number and N≥2 and n is also a whole number and n≥2;'}{'sub': j', 'j', 'j', 'i', 'j', 'i, 'said sputtering arrangement further comprising bridge switches Sbfor switching the power output Pof the respective sputtering power generator G, and pulse switch Spfor distributing the respective power outputs Pto the respective sputtering cathodes T;'} [{'sub': j', 'j', 'j', 'j=1', 'i', 'i', 'i=1', 'i, 'sup': n', 'N, 'in the first interconnection variant, the respective power outputs Pof the n sputtering power generators Gcan be logically interconnected by means of the bridge switches so that a total sputtering power P is supplied, which corresponds to the sum of the power outputs P, i.e. P=ΣPj, and through a pulse sequence generation by means of the respective pulse switches, a sequence of power pulses with pulse power P and sequence period T is produced; the individual power pulses are chronologically distributed to the respective sputtering cathodes T; the sputtering cathodes are respectively supplied with power during a pulse time t; and a period T corresponds to the sum of the pulse times, i.e. T=Σt, and'}, {'sub': A', 'j=1', 'B', 'j=nA', 'A', 'A', 'B', 'B', 'A', 'B', 'A', 'i=1', 'B', 'i=NA, 'sup': nA', 'n', 'NA', 'N, 'in the second interconnection variant, the sputtering cathodes are operated in at least two separate sputtering sub-arrangements A and B; in ...

Apparatus For Depositing Material On The Surface Of A Substrate

An apparatus with a deposition source and a substrate holder having a source mounting portion, which is rotatable about a first axis, a shielding element, which is disposed between the deposition source and the substrate holder, and a drive arrangement. The deposition source has a material outlet opening from which material is emitted. A longitudinal axis of an elongate central region of the material outlet opening extends parallel and centrally between the edges of the material outlet opening. The deposition source is mounted to the source mounting portion such that the longitudinal axis of the central region is parallel to the first axis. The shielding element has an aperture. The drive arrangement controls rotation of the source mounting portion, adjustment of a width of the aperture, and relative movement between the substrate holder and both the source mounting portion and the shielding element. 1. An apparatus for depositing material on the surface of a substrate , the apparatus comprising:{'b': 5', '5', '5', '5', '5', '5, 'i': a', 'a', 'a', 'a', 'a, 'at least one deposition source () comprising a material outlet opening () and being adapted to emit material from the material outlet opening (), wherein the material outlet opening () has an elongate central region comprising two opposite straight parallel spaced edges delimiting the material outlet opening () on opposite sides, wherein an axis extending parallel to and in the middle between the two opposite edges is a longitudinal axis of the central region of the material outlet opening ();'}{'b': '5', 'a substrate holder () adapted to support a substrate thereon;'}{'b': 6', '7', '13', '5', '13', '7', '5', '5', '13, 'i': 'a', 'a support structure () comprising a source mounting portion (), which is selectively rotatable about a first axis () and to which the at least one deposition source () is mounted such that it rotates about the first axis () together with the source mounting portion () and such that the ...

MAGNETRON SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING THIN FILM

In the present invention, in forming a LaB6 thin film by sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film is improved. In one embodiment of the present invention, high frequency power from a high frequency power supply, and first direct current power after high frequency components from a first direct current power supply are cut are applied to a target, and direct current power from a second direct current power supply is applied to a substrate holder during the application of the high frequency power and the first direct current power.

Atmospheric cold plasma jet coating and surface treatment

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

MAGNETRON PLASMA SYSTEM

HIGH-POWER SPUTTERING SOURCE

RADIO FREQUENCY (RF) - SPUTTER DEPOSITION SOURCE, DEPOSITION APPARATUS AND METHOD OF ASSEMBLING THEREOF

Method for producing films

ＨＩＰＩＭＳ電源を備えるコーティング装置

ВЫСОКОПРОИЗВОДИТЕЛЬНЫЙ ИСТОЧНИК ДЛЯ ПРОЦЕССА РАСПЫЛЕНИЯ

FIELD: physics. SUBSTANCE: invention relates to method and apparatus for magnetron sputtering of material from a target surface in such a way that a high percentage of sputtered material is provided in form of ions. Method includes generating a plasma discharge with a discharge current density greater than 0.2A/cm. Method uses at least two magnetron sputtering sources with preset tolerable heating temperature and preset sputtering zone. Power supply unit is used, which includes at least two generators, which are connected to each other in a Master-Slave configuration. Outputs of said generators are connected in parallel, and slave generators are connected to master generator by control system. Supplied power is controlled on master generator. At second source power is supplied from corresponding generator after disconnection of power supply to first source. EFFECT: during disconnection sputtered target is able to cool down, so that its temperature limit is not exceeded. 6 cl, 6 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 602 571 C2 (51) МПК C23C 14/34 (2006.01) C23C 14/54 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2013151606/02, 30.03.2012 (24) Дата начала отсчета срока действия патента: 30.03.2012 (72) Автор(ы): КРАССНИТЦЕР, Зигфрид (AT), РУМ, Курт (LI) 20.04.2011 DE 102011018363.9 (43) Дата публикации заявки: 27.05.2015 Бюл. № 15 R U (73) Патентообладатель(и): ЭРЛИКОН СЕРФИЗ СОЛЮШНЗ АГ, ПФЕФФИКОН (CH) Приоритет(ы): (30) Конвенционный приоритет: (45) Опубликовано: 20.11.2016 Бюл. № 32 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 20.11.2013 2 6 0 2 5 7 1 (56) Список документов, цитированных в отчете о поиске: DE 102006017382 A1, 16.05.2007. RU 2371514 C1, 27.10.2009. RU 1828142 C, 27.06.1995. UA 77692 C2, 15.01.2007. DE 202010001497 U1, 22.04.2010. US 6183614 B1, 06.02.2001. EP 2012/001414 (30.03.2012) C 2 C 2 (86) Заявка PCT: (87) Публикация заявки PCT: R U 2 6 0 2 5 7 1 WO ...

МОДУЛЬ ДЛЯ СИСТЕМЫ НАНЕСЕНИЯ ПОКРЫТИЯ И СВЯЗАННАЯ С НИМ ТЕХНОЛОГИЯ

... 1. Модуль для использования совместно с устройством для нанесения покрытий, которое содержит, по меньшей мере, одну камеру, содержащий: ! крышку, достаточную для плотного прилегания к проему камеры; и ! источник питания, физически связанный с этой крышкой, другой крышкой, связанной с расположенной поблизости камерой, или устройством для нанесения покрытий, при этом источник питания является достаточным для приема электрического входного сигнала и для выдачи электрического выходного сигнала, достаточного для распыления внутри камеры. ! 2. Модуль по п.1, в котором источник питания является достаточным для поддержания или для изменения электрического выходного сигнала на основании заданного значения или заданного диапазона. ! 3. Модуль по п.1, в котором электрический входной сигнал является входным сигналом трехфазного переменного тока от около 380 В до около 600 В, от около 50 Гц до около 60 Гц. ! 4. Модуль по п.1, дополнительно содержащий магнетрон, физически связанный с крышкой. ! 5. Модуль ...

КОМПОНОВОЧНАЯ СХЕМА И СПОСОБ ИОННО-ПЛАЗМЕННОГО РАСПЫЛЕНИЯ ДЛЯ ОПТИМИЗИРОВАННОГО РАСПРЕДЕЛЕНИЯ ПОТОКА ЭНЕРГИИ

РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2018 120 892 A (51) МПК H01J 37/34 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2018120892, 14.11.2016 (71) Заявитель(и): ЭРЛИКОН СЕРФИС СОЛЬЮШНС АГ, ПФЕФФИКОН (CH) Приоритет(ы): (30) Конвенционный приоритет: 12.11.2015 US 62/254,451 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 13.06.2018 R U (43) Дата публикации заявки: 13.12.2019 Бюл. № 35 (72) Автор(ы): КРАССНИТЦЕР Зигфрид (AT), ЛЕНДИ Даниэль (CH), КУРАПОВ Денис (CH) (86) Заявка PCT: (87) Публикация заявки PCT: WO 2017/080672 (18.05.2017) R U (54) КОМПОНОВОЧНАЯ СХЕМА И СПОСОБ ИОННО-ПЛАЗМЕННОГО РАСПЫЛЕНИЯ ДЛЯ ОПТИМИЗИРОВАННОГО РАСПРЕДЕЛЕНИЯ ПОТОКА ЭНЕРГИИ (57) Формула изобретения 1. Компоновочная схема ионно-плазменного распыления, причем компоновочная схема ионно-плазменного распыления включает в себя N количество распыляемых катодов или частичных катодов Ti с i = от 1 до N и n количество генераторов Gj мощности ионно-плазменного распыления с j = от 1 до n, отличающаяся тем, что N является целым числом и N≥2, а n также является целым числом и n≥2, причем компоновочная схема ионно-плазменного распыления включает в себя переключатели Sbj на мостовой схеме для коммутации отбора мощности Pj соответствующего генератора Gj мощности ионно-плазменного распыления и импульсные переключатели Spi для распределения соответствующих отборов мощности Pj на соответствующие распыляемые катоды Ti, причем компоновочная схема ионно-плазменного распыления выполнена таким образом, что она может эксплуатироваться по меньшей мере в двух различных вариантах коммутации, причем в первом варианте коммутации соответствующие отборы мощности Pj n-ных генераторов Gj мощности ионно-плазменного распыления соответственно посредством переключателей на мостовой схеме могут коммутироваться таким образом, что обеспечивается суммарная мощность Р ионно-плазменного распыления, которая Стр.: 1 A 2 0 1 8 1 2 0 8 9 2 A Адрес для переписки: ...

STROMVERSORGUNGSVORRICHTUNG ZUM SPUTTERN UND SPUTTERVORRICHTUNG, DIE DIESE VERWENDET

Vacuum treatment apparatus with additional voltage supply

A vacuum treatment apparatus 10 for treating at least one substrate 12 comprises a treatment chamber 14 at least one cathode 16, a power supply 18 associated with the cathode for generating ions of a material present in the gas phase in the chamber and/or ions of a material of which the cathode is formed, a substrate carrier 20 and a bias power, supply 32 for applying a negative bias to the substrate carrier and any substrate present thereon. To attract said ions to the substrate, the cathode power supply is adapted to apply relatively high power pulses of relatively short duration to the cathode at intervals resulting in lower average power levels comparable with DC operation, e.g. in the range from ca. 1 KW to 100 KW. The bias power supply is adapted to permit a bias current to flow at a level corresponding generally to the average power level, and an additional voltage supply 60 of relatively low inductive and resistive impedance is associated with the bias power supply for supplying ...

Reactive sputtering with multiple sputter sources

The apparatus ( 1 ) for coating a substrate ( 14 ) by reactive sputtering comprises an axis ( 8 ), at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ) and a power supply connected to the targets ( 11,12 ), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate ( 14 ) by coating a substrate ( 14 ) by reactive sputtering in an apparatus ( 1 ) comprising an axis ( 8 ). The method comprises a) providing a substrate ( 14 ) to be coated; b) providing at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ); c) alternatively operating said targets ( 11,12 ) as cathode and anode during coating. Preferably, the targets ( 11,12 ) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

Rf impedance matching network with secondary dc input

Embodiments of the disclosure may provide a matching network for a physical vapor deposition system. The matching network may include an RF generator coupled to a first input of an impedance matching network, and a DC generator coupled a second input of the impedance matching network. The impedance matching network may be configured to receive an RF signal from the RF generator and a DC signal from the DC generator and cooperatively communicate both signals to a deposition chamber target through an output of the impedance matching network. The matching network may also include a filter disposed between the second input and the output of the impedance matching network.

Film formation apparatus and film formation method

A film formation apparatus of the present invention has two sputtering evaporation sources each of which includes an unbalanced magnetic field formation means formed by an inner pole magnet arranged on the inner side and an outer pole magnet arranged on the outer side of this inner pole magnet, the outer pole magnet having larger magnetic line density than the inner pole magnet, and a target arranged on a front surface of the unbalanced magnetic field formation means, and further has an AC power source for applying alternating current whose polarity is switched with a frequency of 10 kHz or more between the targets of the two sputtering evaporation sources so as to generate discharge between both the targets and perform film formation.

Apparatus and method for depositing hydrogen-free ta-c layers on workpieces and workpiece

An apparatus for the manufacture of at least substantially hydrogen-free ta-C layers on substrates, which includes a vacuum chamber, which is connectable to an inert gas source and a vacuum pump, a support device in the vacuum chamber, at least one graphite cathode having an associated magnet arrangement forming a magnetron that serves as a source of carbon material, a bias power supply for applying a negative bias voltage to the substrates on the support device, at least one cathode power supply for the cathode, which is connectable to the at least one graphite cathode and to an associated anode and which is designed to transmit high power pulse sequences spaced at intervals of time, with each high power pulse sequence comprising a series of high frequency DC pulses adapted to be supplied, optionally after a build-up phase, to the at least one graphite cathode.

Radio frequency tuned substrate biased physical vapor deposition apparatus and method of operation

A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. 1. A sputtering cathode assembly , comprising:a pair of long-side portions each comprising a hollow cylindrical sputtering target supported by a shaft for rotation about a longitudinal central axis thereof, with the long-side portions being arranged parallel to each other and opposing each other across an interior region of the sputtering cathode assembly;a pair of short-side portions, with each of the pair of short-side portions extending between the pair of long-side portions near respective ends thereof and being arranged perpendicularly to the long-side portions and opposing each other across the interior region of the sputtering cathode assembly, the short-side portions each having a rectangular cross-section taken at a lengthwise central portion thereof;a long-side permanent magnet disposed within the hollow cylindrical sputtering target comprising each of the long-side portions, with each of the long-side permanent magnets extending lengthwise within its associated hollow cylindrical sputtering target with a north pole disposed toward one side of the associated hollow cylindrical sputtering target and a south pole disposed toward an opposite side of the associated hollow cylindrical sputtering target;a set of short-side permanent magnets associated with each of the short-side portions on a side thereof that is distal ...

PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR

Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components. 1. A plasma processing device which processes an object to be processed using plasma , the plasma processing device comprising:a processing container configured to perform a processing by the plasma therein; anda plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves, and the plasma generation mechanism being configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator,wherein the high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator, the signal having a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and having reduced different frequency components.2. The plasma processing device of claim 1 , wherein the high-frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high-frequency ...

APPARATUS AND METHOD FOR TREATING SUBSTRATE

Provided is an apparatus for treating a substrate. The substrate treating apparatus includes a substrate supporting unit for supporting the substrate and fixing the substrate with electrostatic force, a plasma generating unit for generating a discharging plasma for discharging a charge of the substrate, and a power supplying unit for supplying power to the substrate supporting unit and the plasma generating unit, wherein the power supplying unit supplies power of a fluctuating pattern to the plasma generating unit when a charge of the substrate is discharged. 1. An apparatus for treating a substrate comprising:a substrate supporting unit for supporting the substrate and fixing the substrate with electrostatic force;a plasma generating unit for generating a discharging plasma for discharging a charge of the substrate; anda power supplying unit for supplying power to the substrate supporting unit and the plasma generating unit,wherein the power supplying unit supplies power of a fluctuating pattern to the plasma generating unit when a charge of the substrate is discharged.2. The substrate treating apparatus of claim 1 ,wherein the power supplying unit comprises,a first power supplying unit for supplying DC power to the substrate supporting unit; anda second power supplying unit for supplying RF power to the plasma generating unit.3. The substrate treating apparatus of claim 2 ,wherein the first power supplying unit,applies a first discharging DC voltage that is smaller compared to a DC voltage for process treating of the substrate when a charge of the substrate is discharged, andapplies a second discharging DC voltage that is smaller than the first discharging DC voltage after the first discharging DC voltage is applied.4. The substrate treating apparatus of claim 2 ,wherein the second power supplying unit,supplies a first discharging RF power that is smaller compared to RF power for process treating of the substrate when a charge of the substrate is discharged, ...

System and method for balancing consumption of targets in pulsed dual magnetron sputtering (dms) processes

A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

Method of coating high aspect ratio features

A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode inside the chamber. A magnet is positioned adjacent to cathode assembly. A platen that supports a substrate is positioned adjacent to the cathode assembly. An output of the power supply is electrically connected to the cathode assembly. The power supply generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge from the feed gas that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

APPARATUS AND METHOD FOR SPUTTERING HARD COATINGS

A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma. 113-. (canceled)14. A pulsed arc power supply comprising:a voltage source that generates a voltage at an output;an energy storage device that is electrically connected to the voltage source, the voltage source charging the energy storage device to store an energy;a switching device that is electrically connected to energy storage device, the switching device releasing the energy stored in the energy storage device when activated in the form of micro pulses;a transformer comprising a primary coil that is electrically coupled to the switching device and a secondary coil, the primary coil receiving the energy stored in the energy storage device when the switch is activated and transforming the received energy to the secondary coil in order to generate voltage oscillation where the micro pulses correspond to the voltage oscillation;a driving circuit that is electrically connected to the diodes, the driving circuit forming the shape of the voltage oscillations; andthe voltage oscillations generate and sustain arc discharge on the cathode.15. The pulsed arc power supply of claim 14 , including arc control circuit including an arc detection means that detects the onset of an arc discharge.16. The pulsed arc power supply of claim 15 , wherein the arc detection means sends a signal to a control device that deactivates drivers for the switching device for a period of time claim 15 , thereby reducing the ...

FILM FORMING DEVICE AND METHOD OF FORMING PIEZOELECTRIC FILM

A film forming device includes an adhesion preventing mechanism in a film formation chamber, in which the adhesion preventing mechanism is configured with a plurality of adhesion preventing plates including at least a substrate edge adhesion preventing plate that is provided on an edge of a region on the substrate holding portion where the substrate is provided and a substrate outer peripheral region adhesion preventing plate that is disposed on an outer periphery of the substrate edge adhesion preventing plate to be spaced from the substrate edge adhesion preventing plate, a potential adjusting mechanism that is electrically connected to any one of the substrate edge adhesion preventing plate or the substrate outer peripheral region adhesion preventing plate is provided, and the adhesion preventing plate connected to the potential adjusting mechanism and an adhesion preventing plate disposed adjacent thereto are disposed at an interval of 0.5 mm to 3.0 mm. 1. A film forming device that forms a thin film on a substrate by sputtering a target , the film forming device comprising:a film formation chamber that is capable of introducing or discharging film forming gas;a target holding portion that holds the target disposed in the film formation chamber;a substrate holding portion that is disposed to face the target holding portion in the film formation chamber and holds a substrate; anda radio frequency sputtering power supply that generates plasma in a space between the target holding portion and the substrate holding portion,wherein an adhesion preventing mechanism that prevents a target material from adhering to an inner wall surface of the film formation chamber, the target material being sputtered and scattered from the target in the film formation chamber,the adhesion preventing mechanism is configured with a plurality of adhesion preventing plates including at least a substrate edge adhesion preventing plate that is provided on an edge of a region on the ...

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. 1. A shared-target sputtering cathode assembly , comprising:a left long-side portion, a right long-side portion, and a central long-side portion, with each long-side portion comprising a hollow cylindrical sputtering target supported by a shaft for rotation about a longitudinal central axis thereof, with the long-side portions being arranged parallel to each other and with the left long-side portion opposing the central long-side portion across a left interior region of the sputtering cathode assembly and the right long-side portion opposing the central long-side portion across a right interior region of the sputtering cathode assembly;a first pair of short-side portions, with each of the first pair of short-side portions extending between the left long-side portion and the central long-side portion near respective ends thereof and being arranged perpendicularly to the left and central long-side portions and opposing each other across the left interior region of the sputtering cathode assembly, the first pair of short-side portions each having a rectangular cross-section taken at a lengthwise central portion thereof;a second pair of short-side portions, with each of the second pair of short-side portions extending between the right long-side portion and the central long-side portion near respective ends thereof and being ...

RATE ENHANCED PULSED DC SPUTTERING SYSTEM

A sputtering system and method are disclosed. The system includes a first power source that is configured to apply a first voltage at a first electrode that alternates between positive and negative relative to a second electrode during each of multiple cycles. A second power source is coupled to a third electrode and the second electrode, and the second power source is configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second electrode during another portion of each cycle. 1. A pulsed sputtering system , comprising:a plasma chamber enclosing at least a first electrode, a second electrode, and a third electrode;a first power source coupled to the first electrode and the second electrode, the first power source configured to apply a first voltage at the first electrode that alternates between positive and negative relative to the second electrode during each of multiple cycles;a second power source coupled to the third electrode and the second electrode, the second power source configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles; anda controller configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second electrode during another portion of each cycle.2. The system of claim 1 , wherein each of ...

WAVEFORM FOR IMPROVED ENERGY CONTROL OF SPUTTERED SPECIES

This disclosure describes systems and methods for regulating the density and kinetic energy of ions in a sputtering deposition chamber. A pulsed DC waveform with a modulated RF signal is generated and applied to the sputtering chamber. Upon termination of a cycle of the pulsed DC waveform, a reverse voltage spike is generated. This reverse voltage spike reverses the polarity of the cathode and anode of the sputtering chamber for some period of time. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. A controller may be employed to control the timing and duration of the application of the DC waveform, the timing and duration of the RF waveform, and the engagement of the reverse limiting circuit. 1. A method for controlling the rate of production and energy distribution of ions in a sputtering system , the method comprising: a plasma initiation portion;', 'a steady-state portion;', 'a reverse DC voltage portion, wherein the reverse DC voltage portion reverses the polarity of a cathode in a sputtering deposition chamber;', 'a reverse voltage threshold; and', 'a pulsed-DC termination point;, 'applying a first cycle of a pulsed-DC waveform to a cathode of a sputtering deposition chamber, wherein the cycle of the pulsed-DC waveform includes a frequency, and', 'an RF application duration., 'applying a first RF waveform to the cathode of the sputtering deposition chamber during at least the steady-state portion, wherein the RF waveform includes2. The method of claim 1 , wherein the reverse limiting threshold set at a voltage selected from the group consisting of +50V claim 1 , +60V claim 1 , +70V claim 1 , +80V claim 1 , +90V claim 1 , +100V claim 1 , +110V claim 1 , +120V claim 1 , +130V claim 1 , +140V claim 1 , +150V claim 1 , +160V claim 1 , +170V claim 1 , +180V claim 1 , +190V claim 1 , +200V claim 1 , +210V claim 1 , +220V claim 1 , +230V claim 1 , +240V claim 1 , +250V claim 1 , +260V ...

Physical Vapor Deposition System with a Source of Isotropic Ion Velocity Distribution at the Wafer Surface

In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator. 120-. (canceled)21. An apparatus for performing physical vapor deposition , comprising:a chamber;a target comprising a metallic element disposed in the chamber, wherein the target provides a first electrode for the chamber;a support having a top surface to support a workpiece having a diameter in the chamber, wherein the support includes a second electrode, and wherein the support is positioned to hold the workpiece such that a targetto-workpiece gap is less than one-fifth of a diameter of the workpiece;a gas supply configured to introduce a carrier gas into the reactor chamber and maintain a gas pressure in the chamber above a threshold pressure at which a mean free path is less than 5% of the gap;an RF generator having a frequency exceeding 30 MHz to apply power to the target to generate a capacitively coupled plasma at the target; andan impedance match network coupled between the VHF generator and the target;wherein the support is configured to provide an RF ground return path at the frequency of the VHF generator.22. The apparatus of claim 21 , wherein the support is positioned such that the gap is about 60 mm and gas supply is configured such that the gas pressure is about 100 mT.23. The apparatus of claim 21 , wherein a sidewall of the chamber is configured to provide a second ...

Rate Enhanced Pulsed DC Sputtering System

A sputtering system and method are disclosed. The system includes first power source coupled to a first magnetron and an anode, and the first power source provides a first anode voltage that alternates between positive and negative during each of multiple cycles. The system also includes a second power source coupled to the second magnetron and the anode, and the second power source provides a second anode voltage that alternates between positive and negative during each of the multiple cycles. A controller of the system controls the first power source and the second power source to phase-synchronize the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the first and second magnetrons during another portion of each cycle. 1. A pulsed sputtering system , comprising:a plasma chamber enclosing a first magnetron coupled to a first target, a second magnetron coupled to a second target, and an anode;a first power source coupled to the first magnetron and the anode, the first power source configured to provide a first anode voltage that alternates between positive and negative relative to the first magnetron during each of multiple cycles;a second power source coupled to the second magnetron and the anode, the second power source configured to provide a second anode voltage that alternates between positive and negative relative to the second magnetron during each of the multiple cycles; anda controller configured to control the first power source and the second power source to phase-synchronize the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the first and second magnetrons during another portion of each cycle.2. The system of claim 1 , wherein:the ...

METHOD AND APPARATUS FOR SPUTTER DEPOSITION

Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes biasing element for applying electrical bias to the target material. The apparatus also includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field having magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path. 1. A sputter deposition apparatus comprising:a substrate guide arranged to guide a substrate along a curved path;a target assembly comprising:a target portion spaced from the substrate guide and arranged to support target material, the target portion and the substrate guide defining between them a deposition zone; andbiasing means for applying electrical bias to the target material; anda confining arrangement comprising one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the substrate in use, the confining magnetic field being characterised by magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.2. The apparatus according to claim 1 , wherein the biasing means is configured to apply electrical bias having negative polarity to the target material.3. The apparatus according to claim 1 , ...

ADJUSTABLE NON-DISSIPATIVE VOLTAGE BOOSTING SNUBBER NETWORK

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. 1. A snubber circuit comprising:first and second power rails that in combination provide an input and output of the snubber circuit;a voltage multiplier coupled between the first power rail and the second power rail, the voltage multiplier boosting a voltage between the first and second power rail;a first unidirectional switch coupled between the first power rail and the voltage multiplier and blocking current attempting to pass from the voltage multiplier to the first power rail through the first unidirectional switch; anda first current limiter coupled between the first power rail and the voltage multiplier, the first current limiter providing a low-resistance current path from the voltage multiplier to the first power rail.2. The snubber circuit of claim 1 , wherein the snubber circuit is coupled between a power supply and a load having an impedance.3. The snubber circuit of claim 2 , wherein the voltage multiplier absorbs and stores energy from the power supply when the impedance of the load substantially increases.4. The snubber circuit of claim 3 , wherein a switching circuit is coupled between the snubber and the load and receives DC power from the power supply and provides pulsed DC power to the load.5. The snubber circuit of claim 3 , wherein the boosting of the voltage between the first and second power rails increases a current ramp rate of power reaching the load.6. The snubber circuit of claim 1 , wherein the snubber is a non- ...

CHARGE REMOVAL FROM ELECTRODES IN UNIPOLAR SPUTTERING SYSTEM

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. 1. A pulsed DC power supply system configured to provide pulsed DC voltage between an anode and a cathode of a plasma processing chamber , the pulsed DC voltage including a first power delivery period of positive voltage separated from a second power delivery period by a charge removal period comprising a charge removal voltage having a negative polarity for removing charge from the cathode , the pulsed DC power supply system comprising:a DC power supply coupled to and providing power to a first and second rail;a switching circuit coupled to the first and second rails and switched so as to convert the power on the first and second rails to the pulsed DC voltage, where positive voltage is referenced from the anode to the cathode; a first unidirectional switch coupled between the first rail and a first electrical node and only allowing current to pass from the first rail to the first electrical node;', 'a voltage multiplier coupled between the second rail and the first electrical node and including an output that provides access to a charge removal voltage within the voltage multiplier;', 'a switch coupled between the first electrical node and a second electrical node;', 'a first current limiter coupled between the second electrical node and the first rail; and, 'a voltage-boosting circuit coupled between the first and second rails and comprisinga charge removal bias circuit coupled to the output of the voltage multiplier and providing the charge ...

METHOD OF CONTROLLING ION ENERGY DISTRIBUTION USING A PULSE GENERATOR WITH A CURRENT-RETURN OUTPUT STAGE

Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate. 1. A processing chamber , comprising: a substrate support assembly comprising a biasing electrode and a substrate-supporting surface, wherein the biasing electrode is electrically coupled to a first electrical conductor;', a pulse generator that is electrically coupled to the second electrical conductor; and', 'a current-return output stage, wherein a first end of the current-return output stage is electrically coupled to the second electrical conductor, and a second end of the current-return output stage is electrically coupled to ground; and, 'a bias generator that is electrically coupled to a second electrical conductor, wherein the bias generator is configured to establish a pulsed voltage waveform at the biasing electrode, the bias generator comprising, 'a blocking capacitor coupled between the first electrical conductor and the second electrical conductor., 'a pulsed DC biasing system, comprising2. The processing chamber of claim 1 , wherein the biasing electrode is spaced apart from the substrate-supporting surface by a layer of dielectric material.3. The processing chamber of claim 1 , wherein the blocking capacitor has a capacitance of between about 40 nF and about 80 nF.4. The processing chamber of claim 1 , wherein a high-voltage module is electrically coupled to the first electrical conductor at a connection point disposed between the biasing electrode and the blocking capacitor.5. The processing chamber of claim 4 , further comprising a resistor disposed between the high-voltage module and the connection point.6. The processing chamber of claim 5 , wherein the resistor has a resistance of more than about 1 MOhm.7. The ...

CHARGE REMOVAL FROM ELECTRODES IN UNIPOLAR SPUTTERING SYSTEM

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. 1. A pulsed DC power supply system comprising:a first and second rail configured to receive power from a DC power supply; 'a first unidirectional switch coupled between the first rail and a first electrical node and only allowing current to pass from the first rail to the first electrical node;', 'a switching circuit coupled to the first and second rails and switched so as to convert the power on the first and second rails to a pulsed DC voltage;'}a charge removal bias circuit coupled to at least the second rail and the switching circuit and providing a negative charge removal voltage to the switching circuit.2. The pulsed DC power supply of claim 1 , further comprising a voltage multiplier coupled between the second rail and the first electrical node and including an output that provides access to the negative charge removal voltage within the voltage multiplier.3. The pulsed DC power supply of claim 2 , wherein the switching circuit includes first claim 2 , second claim 2 , third claim 2 , and fourth switches of the switching circuit arranged in an h-bridge topology such that when the first and fourth switches of the switching circuit are closed claim 2 , a positive voltage is applied across the first and second rails claim 2 , and when the second and third switches of the switching circuit are closed claim 2 , the negative charge removal voltage is applied across the first and second rails.4. The pulsed DC power supply of claim 2 , further ...

Sputtering System And Method Including An Arc Detection

A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

MODULATION OF REVERSE VOLTAGE LIMITED WAVEFORMS IN SPUTTERING DEPOSITION CHAMBERS

Modulation of a waveform applied to a cathode of a sputtering deposition chamber regulates the sputtering rate and density and kinetic energy of ions in a sputtering deposition chamber. A waveform may include a pulsed DC waveform with a modulated AC signal superimposed on the pulsed DC waveform. The DC waveform may have a reverse voltage period. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. One may modulate various properties of the waveform to increase or decrease sputtering rates and thin-film quality. 1. A method of controlling ions in a sputtering system that includes at least one cathode , the method comprising:generating a modulated power signal, wherein the modulated power signal includes a reverse voltage portion, the reverse voltage portion limited by a reverse voltage limit;providing the modulated power signal to the least one cathode.2. The method of claim 1 , wherein generating a modulated power signal comprises:generating an amplitude-modulated power signal.3. The method of claim 1 , wherein the reverse voltage limit is set at a voltage selected from the group consisting of:+10V, +25V, +50V, +60V, +70V, +80V, +90V, +100V, +110V, +120V, +130V, +140V, +150V, +160V, +170V, +180V, +190V, +200V, +210V, +220V, +230V, +240V, +250V, +260V, +270V, +280V, +290V, +300V, +310V, +320V, +330V, +340V, +350V, +360V, +370V, +380V, +390V, and +400V.4. The method of claim 1 , wherein generating a modulated power signal comprises:generating an pulse-width modulated power signal.5. The method of claim 1 , wherein generating a modulated power signal comprises:generating a pulse-amplitude modulated power signal.6. The method of claim 1 , further comprising:actively varying a characteristic of the modulated power signal while the sputtering system is sputtering to thereby impact film growth.7. The method of claim 1 , wherein the modulated power signal includes an AC signal.8. The method of claim ...

SPUTTERING APPARATUS

A magnetron assembly for a rotary target cathode comprises an elongated support structure, a magnet bar structure movably positioned below the support structure, and a plurality of drive modules coupled to the support structure. The drive modules each include a motorized actuation mechanism operatively coupled to the magnet bar structure. A controller and battery module is coupled to the support structure and is in operative communication with the drive modules. The controller and battery module includes an electronic controller and at least one rechargeable battery. The battery is configured to energize each motorized actuation mechanism and the electronic controller. One or more power generation modules is coupled to the support structure and in electrical communication with the battery, such that electrical energy output from the power generation modules recharges the battery. 1. A magnetron assembly for a rotary target cathode , the magnetron assembly comprising:an elongated support structure;a magnet bar structure movably positioned below the support structure;a plurality of drive modules coupled to the support structure, the drive modules each including a motorized actuation mechanism operatively coupled to the magnet bar structure;a controller and battery module coupled to the support structure and in operative communication with the drive modules, the controller and battery module including an electronic controller and at least one rechargeable battery, the battery configured to energize each motorized actuation mechanism and the electronic controller; andone or more power generation modules coupled to the support structure and in electrical communication with the battery such that electrical energy output from the one or more power generation modules recharges the battery.2. The magnetron assembly of claim 1 , wherein the one or more power generation modules is configured to directly drive the motorized actuation mechanism in each of the drive modules.3. ...

Methods for igniting a plasma in a substrate processing chamber

Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.

ELECTRICAL TRANSFER IN AN ENDBLOCK FOR A SPUTTER DEVICE

A power transfer system is described for transfer of electrical power to a sputter target in a sputter device. It comprises a first part comprising a contact surface positionable against a first part of an endblock of the sputter device, a second part inseparably connected to the first part and a third part, and a third part comprising a contact surface positionable against a second part of the endblock or directly against a sputter target when mounted on the endblock. At least two of the three parts are formed as one monolithic piece. One of the parts of the power transfer system is resilient such that, when mounted, the power transfer system is clamped between the first part of the endblock and the second part of the endblock or the sputter target. This part is also responsible for the transfer of electrical power. 127.-. (canceled)28. A power transmission system for transmission of electrical power to a sputter target in a sputter device , the power transmission system comprising:a first part comprising a contact surface positionable against a first part of a endblock of the sputter device,a second part, wherein the first part is inseparably connected to the second part and the second part is inseparably connected to a third part,a third part comprising a contact surface positionable against a second part of the endblock,wherein at least two of the three parts are formed as one monolithic piece, andwherein the first and/or the second and/or the third part is spring-loaded such that, when mounted, the power transmission system is clamped between the first part of the endblock and the second part of the endblock, andwherein this part of the power transmission system is also responsible for the transmission of electrical power.29. The power transmission system according to claim 28 , wherein at least two of the three parts of the power transmission system are made from the same material.30. The power transmission system according to claim 28 , wherein the three ...

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. 1. A sputtering device , comprising: a hollow sputtering target with a rectangular interior region and having a rectangular tubular configuration that extends in a lengthwise direction with a rectangular cross-section taken transverse to the lengthwise direction, the sputtering target having an open end at each end thereof and comprising a) a pair of major side walls that extend in the lengthwise direction of the sputtering target and that oppose each other across the rectangular interior region of the sputtering target, with opposing inner surfaces of the major side walls constituting sputtering erosion surfaces; and b) a pair of short side walls that extend in the lengthwise direction of the sputtering target and that oppose each other across the rectangular interior region of the sputtering target, the pair of short side walls connecting the pair of major side walls such that the rectangular interior region of the sputtering target is bounded by and delimited by the pair of major side walls along long sides thereof and by the pair of short side walls along short sides thereof;', 'a magnetic field-generating assembly consisting of a pair of permanent-magnet units disposed near outer surfaces of each of the major side walls of the sputtering target with one permanent-magnet unit disposed toward each open end of the sputtering ...

ION SOURCE SPUTTERING

An ion source comprising: an electrode; a counter electrode; means for generating an electrical potential between the electrode and counter-electrode; one or more magnets arranged, in use, to confine a plasma generated around the electrode upon application of the said electrical potential; and an aperture in the counter-electrode through which ions from the said plasma can escape; characterized in that: the means for generating an electrical potential between the electrode and counter electrode comprises a DC signal generator that is: electrically connected to the electrode and the counter-electrode; adapted, in use, to apply a baseline DC potential to the electrode and the counter-electrode with the DC potential at the electrode being positive relative to the DC potential at the counter electrode; and adapted, in use, to apply a sequence of DC pulses superimposed onto the baseline DC potential. 154-. (canceled)55. An ion source comprising:an electrode;a counter electrode;means for generating an electrical potential between the electrode and counter-electrode;one or more magnets arranged, in use, to confine a plasma generated around the electrode upon application of the said electrical potential; andan aperture in the counter-electrode through which ions from the said plasma can escape;characterized in that: the means for generating an electrical potential between the electrode and counter electrode comprises a DC signal generator that is:electrically connected to the electrode and the counter-electrode;adapted, in use, to apply a baseline DC potential to the electrode and the counter-electrode with the DC potential at the electrode being positive relative to the DC potential at the counter electrode; andadapted, in use, to apply a sequence of DC pulses superimposed onto the baseline DC potential, the power of each pulse varying in at least one of voltage and current from pulse to pulse.56. The ion source of claim 55 , wherein the DC pulse maximum potential claim 55 ...

METHOD FOR BALANCING CONSUMPTION OF TARGETS IN PULSED DUAL MAGNETRON SPUTTERING (DMS) PROCESSES

A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

DUAL POWER FEED ROTARY SPUTTERING CATHODE

A rotary sputtering cathode assembly is provided that comprises a rotatable target cylinder having a first end and an opposing second end. A first power transfer apparatus is configured to carry radio frequency power to the first end of the target cylinder, and a second power transfer apparatus is configured to carry radio frequency power to the second end of the target cylinder. Radio frequency power signals are simultaneously delivered to both of the first and second ends of the target cylinder during a sputtering operation. 1. A rotary sputtering cathode assembly , comprising:a rotatable target cylinder having a first end and an opposing second end;a first power transfer apparatus configured to carry radio frequency (RF) power to the first end of the target cylinder; anda second power transfer apparatus configured to carry RF power to the second end of the target cylinder;wherein RF power signals are simultaneously delivered to both of the first and second ends of the target cylinder during a sputtering operation.2. The rotary sputtering cathode assembly of claim 1 , further comprising a first end-block located at the first end and a second end-block located at the second end claim 1 , the first and second end-blocks respectively housing the first and second power transfer apparatus.3. The rotary sputtering cathode assembly of claim 1 , wherein the first and second power transfer apparatus each transmits power from a static element to the target cylinder.4. The rotary sputtering cathode assembly of claim 1 , wherein the first power transfer apparatus communicates with a first RF power source connected to the first end claim 1 , and the second power transfer apparatus communicates with a second RF power source connected to the second end.5. The rotary sputtering cathode assembly of claim 4 , wherein the first and second RF power sources are synchronized.6. The rotary sputtering cathode assembly of claim 1 , wherein the first power transfer apparatus and the second ...

DUAL POWER FEED ROTARY SPUTTERING CATHODE

A rotary sputtering cathode assembly is provided that comprises a rotatable target cylinder having a first end and an opposing second end. A first power transfer apparatus is configured to carry radio frequency power to the first end of the target cylinder, and a second power transfer apparatus is configured to carry radio frequency power to the second end of the target cylinder. Radio frequency power signals are simultaneously delivered to both of the first and second ends of the target cylinder during a sputtering operation. 1. A rotary sputtering cathode assembly , comprising:a rotatable target cylinder having a first end and an opposing second end;a first end-block connected to the first end of the rotatable target cylinder, wherein the first end block includes a first set of rotary water seals configured to provide separation between water and atmosphere, and a first set of rotary vacuum seals configured to provide separation between vacuum and atmosphere;a first power transfer apparatus operatively coupled to the first end-block, the first power transfer apparatus including a first power supply bus and a first static conductive element coupled to the first power supply bus, wherein the first static conductive element is in contact with a first rotary electrical contact connected to the rotatable target cylinder;a second end-block coupled to the second end of the rotatable target cylinder, wherein the second end block includes a second set of rotary water seals configured to provide separation between water and atmosphere, a second set of rotary vacuum seals configured to provide separation between vacuum and atmosphere;a second power transfer apparatus operatively coupled to the second end-block, the second power transfer apparatus including a second power supply bus and a second static conductive element coupled to the second power supply bus, wherein the second static conductive element is in contact with a second rotary electrical contact connected to the ...

SPUTTER UNIT

A sputter unit is introduced comprising a housing, a gas inlet, an interface for removable connecting the sputter unit to a vacuum chamber, a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber, an interface for removable connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, and a transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber. 1. A sputter unit , comprising:a housing,a gas inlet,an interface for removably connecting the sputter unit to a vacuum chamber,a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber,an interface for removably connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, anda transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber.2. A sputter unit according to claim 1 ,wherein the gas outlet comprises a dispenser ring comprising multiple bores facing the vacuum chamber when connected to the sputter unit.3. A sputter unit according to claim 2 ,wherein the dispenser ring has a circular shape, andwherein the bores are arranged equidistant in the dispenser ring.4. A sputter unit according to claim 1 , comprising:an electrically operable valve for adjusting a flow of the process gas into the gas outlet,wherein the valve is arranged closer to the gas outlet than to the gas inlet.5. A sputter unit according to claim 4 ,wherein the gas outlet comprises a dispenser ring comprising multiple bores facing the vacuum chamber when connected to the sputter unit, andwherein the valve is arranged at a maximum distance of five centimetres from the dispenser ring.6. A sputter unit according to claim 1 , comprising:an ...

AC POWER CONNECTOR, SPUTTERING APPARATUS AND METHOD THEREFOR

An AC power connector for connecting an AC power supply with a device is provided. The AC power connector includes at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second elements being arranged at a first distance with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element. 1. An AC power connector for connecting an AC power supply with a device , the AC power connector comprising:at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second element being arranged at a first distance with respect to each other for defining a capacitance,wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.2. The AC power connector of claim 1 , wherein the at least one first element is a cylinder element claim 1 , and/or wherein the at least one second element is a cylinder element.3. The AC power connector of claim 2 , wherein the at least one first element is a hollow cylinder element claim 2 , and/or wherein the at least one second element is a hollow cylinder element.4. The AC power connector of including in sum at least three first elements and at least three second elements being nested.5. The AC power connector of claim 1 , wherein the capacitance is in the range of 1 to 5000 nF.6. The AC power connector of claim 1 , wherein the at least one first element and the at least one ...

Plasma power supply utilizing ignition circuit with bypass switch with reactive impedance

The disclosed invention reduces current in the ignition circuit during normal operation (after ignition) by redirecting portion of the plasma current via a bypass switch.

Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

ATMOSPHERIC COLD PLASMA JET COATING AND SURFACE TREATMENT

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region. 1. A system for depositing a material onto a receiving surface , where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface , the system comprising:a microwave generator electronics stage; an outer conductor,', 'an inner conductor,', 'a resonator cavity interposed between the outer conductor and the inner conductor,, 'a microwave applicator stage including a cavity resonator structure, wherein the cavity resonator structure comprises a laminar flow nozzle providing a shield gas,', 'a zonal flow nozzle providing a functional process gas, and', 'a source material flow nozzle configured to deliver the source material,', 'wherein the source material flow nozzle and zonal flow nozzle are physically configured to facilitate a reaction between the source material and the functional process gas within a plasma region generated by the microwave generator electronics stage and the microwave applicator stage,', 'wherein the plasma region is between an outlet of the source material flow nozzle and the receiving ...

PHYSICAL VAPOR DEPOSITION WITH ISOTROPIC NEUTRAL AND NON-ISOTROPIC ION VELOCITY DISTRIBUTION AT THE WAFER SURFACE

In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator. 1. A method of performing physical vapor deposition on a workpiece in a reactor chamber , comprising:supporting a workpiece in a chamber that includes a target comprising a metallic element and having a surface facing the workpiece with a target-to-workpiece gap less than a diameter of said workpiece;introducing a carrier gas into the chamber;applying RF plasma source power from a VHF generator to said target to generate a capacitively coupled plasma at said target;extending said plasma across said gap to said workpiece by providing through said workpiece a first VHF ground return path at the frequency of said VHF generator; andmaintaining gas pressure in the chamber above a threshold pressure at which an ion collision mean free path of the plasma is less than 5% of said gap.2. (canceled)3. The method of wherein said target-to-workpiece gap does not exceed ⅕ of said diameter of said workpiece.4. The method of where the diameter of said workpiece is about 300 mm claim 3 , said gap is about 60 mm and said gas pressure is about 100 mT.5. The method of further comprising limiting a bias voltage on said workpiece relative to plasma in said chamber below an upper threshold voltage corresponding to an ion bombardment threshold voltage of said carrier gas.6. The method of further comprising ...

Method of controlling ion energy distribution using a pulse generator with a current-return output stage

Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

Pulsed power module with pulse and ion flux control for magnetron sputtering

An electrical power pulse generator system and a method of the system's operation are described herein. A main energy storage capacitor supplies a negative DC power and a kick energy storage capacitor supplies a positive DC power. A main pulse power transistor is interposed between the main energy storage capacitor and an output pulse rail and includes a main power transmission control input for controlling power transmission from the main energy storage capacitor to the output pulse rail. A positive kick pulse power transistor is interposed between the kick energy storage capacitor and the output pulse rail and includes a kick power transmission control input for controlling power transmission from the kick energy storage capacitor to the output pulse rail. A positive kick pulse power transistor control line is connected to the kick power transmission control input of the positive kick pulse transistor.

METHOD OF CONTROLLING ION ENERGY DISTRIBUTION USING A PULSE GENERATOR

Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate. 1. A pulsed DC biasing system , comprising:a substrate support assembly comprising a biasing electrode and a substrate-supporting surface, wherein the biasing electrode is electrically coupled to a first electrical conductor;a bias generator that is electrically coupled to a second electrical conductor;a blocking capacitor electrically coupled between the first electrical conductor and the second electrical conductor;a blocking resistor electrically coupled to the first electrical conductor at a connection point disposed between the blocking capacitor and the biasing electrode; and generating a plasma over a surface of a substrate disposed on the substrate-supporting surface;', 'using the bias generator to establish a pulsed voltage waveform at the biasing electrode through the blocking capacitor; and', 'chucking the substrate to the substrate support assembly by delivering a chucking voltage from a high-voltage module to the biasing electrode through the first electrical conductor., 'a non-transitory computer readable medium having instructions stored thereon for performing a method of processing a substrate when executed by a processor, the method comprising2. The pulsed DC biasing system of claim 1 , wherein the biasing electrode is spaced apart from the substrate-supporting surface by a layer of dielectric material.3. The pulsed DC biasing system of claim 1 , wherein the blocking capacitor has a capacitance of between about 40 nF and about 80 nF.4. The pulsed DC biasing system of claim 1 , wherein the high-voltage module is electrically coupled to the first electrical conductor at a connection point disposed between the biasing ...

POWER SUPPLY CIRCUIT AND METHOD OF OPERATION THEREOF

A power supply circuit includes an energy storage element, a first switch, a voltage signal converter, a second switch, a third switch and a power supply. The first switch is coupled to the energy storage element at a first voltage output terminal. The voltage signal converter is coupled to, respectively, the energy storage element and the first switch at a first converter output terminal and a second converter output terminal. The second switch is coupled to the first switch. The third switch is coupled to the second switch at a second voltage output terminal. The power supply is coupled to the second switch and the third switch. The energy storage element, the first switch, the voltage signal converter, the second switch, the third switch and the power supply cooperate and generate a output voltage. A method of operating the power supply circuit is also disclosed herein. 1. A power supply circuit , comprising:an energy storage element;a first switch, a first terminal of the first switch being coupled to a first terminal of the energy storage element at a first voltage output terminal;a voltage signal converter comprising a first converter output terminal and a second converter output terminal, wherein a second terminal of the energy storage element is coupled to the first converter output terminal, and a second terminal of the first switch is coupled to the second converter output terminal;a second switch, a first terminal of the second switch being coupled to the second terminal of the first switch;a third switch, a first terminal of the third switch being coupled to a second terminal of the second switch at a second voltage output terminal; anda power supply, a first terminal of the power supply being coupled to the first terminal of the second switch, a second terminal of the power supply being coupled to the second terminal of the third switch;wherein the energy storage element, the first switch, the second switch, the third switch, the voltage signal ...

Substrate coating assembly using a sputtering device

The apparatus includes a process space (2) with reactive gas supply (15, 16), and at least one electrode (20, 21) connected to an electric supply unit (34) in such a way that the discharge voltage of the electrode depends on the rate of reactive gas supplied. The apparatus further includes a device for switching between two values (P1, P2) the electric power supplied to the electrode. These two values are chosen so that the target(22, 23) - for the same reactive gas flow - for first value (P1) is in a metallic mode, while for the second value (P2) it is in a oxidic mode. Also claimed is a method for establishing an operating point for the proposed apparatus.

Deposition by impulse magnetron dispersion with pre-ionisation

FIELD: physics. SUBSTANCE: invention is related to method for deposition of substance onto substrate, impulse source of supply for magnetron reactor and to magnetron reactor. Substance is dispersed onto substrate in magnetron reactor. Prior to supply of each pulse of the main voltage, gas is pre-ionised to provide for generation of current pulses. Time for decay of specified current pulses after cutoff of the main voltage pulses that are less than 5 microseconds. Pulse source of supply comprises facilities for generation of the main voltage pulses, facilities for generation of control pulses and commuting facilities. EFFECT: efficient ionisation of dispersed vapors of substance is achieved. 17 cl, 18 dwg, 1 tbl РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 364 661 (13) C2 (51) МПК C23C 14/35 C23C 14/02 C23C 14/54 (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21), (22) Заявка: 2006133826/02, 22.03.2005 (24) Дата начала отсчета срока действия патента: 22.03.2005 (43) Дата публикации заявки: 27.04.2008 (56) Список документов, цитированных в отчете о поиске: WO 02103078 A1, 27.12.2002. WO 03079397 A, 25.09.2003. RU 2058429 C1, 20.04.1996. WO 03021001 A1, 13.03.2003. JP 1118987 A, 13.07.1999. (73) Патентообладатель(и): МАТЕРЬЯ НОВА АСБЛ (BE), САНТР НАСЬОНАЛЬ ДЕ ЛА РЕШЕРШ СЬЕНТИФИК (СНРС) (FR), ЮНИВЕРСИТЕ ПАРИ-СЮД (FR) 2 3 6 4 6 6 1 R U (86) Заявка PCT: BE 2005/000038 (22.03.2005) C 2 C 2 (85) Дата перевода заявки PCT на национальную фазу: 23.10.2006 (87) Публикация PCT: WO 2005/090632 (29.09.2005) Адрес для переписки: 191002, Санкт-Петербург, а/я 5, ООО "Ляпунов и партнеры", пат.пов. Ю.В.Кузнецовой (54) ОСАЖДЕНИЕ ИМПУЛЬСНЫМ МАГНЕТРОННЫМ РАСПЫЛЕНИЕМ С ПРЕДЫОНИЗАЦИЕЙ (57) Реферат: Изобретение относится к способу осаждения вещества на подложку, импульсному источнику питания для магнетронного реактора и магнетронному реактору. Осуществляют распыление вещества на подложку в ...

FEEDING UNIT, SPUTTER PLANT, METHOD FOR REDUCING SPECT FORMATION IN SPUTTER PROCESS, AND METHOD FOR MANUFACTURING MEMBER

Cathode sputtering mode

재료를 증착시키기 위한 방법이 제공된다. 방법은, 캐소드 어레이로부터 재료를 스퍼터링하는 단계를 포함하고, 캐소드 어레이의 2개의 인접한 캐소드들 중 오직 하나만이, 하나 또는 그 초과의 시간 간격들을 갖도록 동작되며, 인접한 캐소드들 중 오직 하나의 캐소드만이, 동일한 기판에 대해 스퍼터링한다. A method for depositing a material is provided. The method includes sputtering material from a cathode array, wherein only one of the two adjacent cathodes of the cathode array is operated to have one or more time intervals, and only one cathode of the adjacent cathodes Sputtering is performed on the same substrate.

Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target

在顶壁处具有溅射靶材的PVD反应器中，包围旋转磁体组件的导电外壳具有一中央开口，以容纳该旋转磁体轴。该外壳的导电中空圆筒环绕着该轴的外部部分。射频功率源耦合至一径向射频(RF)连接杆，该射频连接杆从该中空圆筒径向地延伸出。直流功率源耦合至另一径向直流(DC)连接杆，该直流连接杆从该中空圆筒径向地延伸而出。

High-power sputtering source

본 발명은 스퍼터링되는 재료의 높은 퍼센티지가 이온 형태로 제공되도록 타깃 표면으로부터 재료를 스퍼터링할 수 있는 마그네트론 스퍼터링 방법에 관한 것이다. 본 발명에 따라, 이는 간단한 제너레이터에 의해 달성되고, 상기 제너레이터의 전력은 시간 간격에 걸쳐 다수의 마그네트론 스퍼터링 소스로 분배되어 공급되고, 즉 하나의 스퍼터링 소스에 하나의 시간 간격 동안 최대 전력이 공급되고, 다음 스퍼터링 소스에 후속하는 시간 간격 동안 최대 전력이 공급된다. 이로 인해 0.2 A/㎠ 보다 큰 방전 전류 밀도가 구현된다. 차단 시간 동안 스퍼터링 타깃은 냉각될 수 있으므로, 한계 온도가 초과되지 않는다. The present invention relates to a magnetron sputtering method capable of sputtering a material from a target surface such that a high percentage of the material being sputtered is provided in ionic form. According to the invention, this is achieved by a simple generator, in which the power of the generator is distributed and supplied to a plurality of magnetron sputtering sources over a time interval, i. E. Maximum power is supplied to one sputtering source during one time interval, Maximum power is supplied during the time interval following the next sputtering source. This results in a discharge current density greater than 0.2 A / cm < 2 >. During the cutoff time, the sputtering target can be cooled, so that the critical temperature is not exceeded.

Power source device

쌍을 이루는 타겟에 낮은 주파수로 펄스 전위를 인가할 때에도, 기판 표면에 형성해야 할 박막의 막 두께 분포의 균일화를 꾀하기 용이한 전원 장치를 제공한다. 본 발명의 전원 장치(E)는 플라즈마에 접촉하는 한 쌍의 타겟(T1, T2)에 대하여 소정의 주파수로 교대로 소정의 펄스 전위를 인가하는 제 1 방전 회로(E1)와, 상기 한 쌍의 타겟 중에서 제 1 방전 회로로부터 출력되고 있지 않은 타겟과 그라운드의 사이에 소정의 펄스 전위를 인가하는 제 2 방전 회로(E2)를 구비한다.

Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target

在顶壁处具有溅射靶材的PVD反应器中，包围旋转磁体组件的导电外壳具有一中央开口，以容纳该旋转磁体轴。该外壳的导电中空圆筒环绕着该轴的外部部份。射频功率源耦合至一径向射频(RF)连接杆，该射频连接杆从该中空圆筒径向地延伸出。直流功率源耦合至另一径向直流(DC)连接杆，该直流连接杆从该中空圆筒径向地延伸而出。

Electric supply unit and a method for reduction sparking during sputtering

고주파 스퍼터링 시에 스파크 발생을 억제시키기 위해, 그 출력에 선행 접속된 제어 스위치 유닛(13)을 구비하는 고주파 발생기(5)가 마련되고, 그 스위치 유닛(13)에 의해 고주파 발생기의 출력에 생성되는 플라즈마 방전(PL)에의 고주파 급전 신호가 단시간 동안 차단되게 된다.

Power source device

기판의 차지-업에 기인한 이상 방전의 발생을 억제할 수 있고, 대면적의 기판에 대해서도 양호한 박막 형성이 가능한 전원 장치를 제공한다. 본 발명의 전원 장치(E)는 플라즈마에 접촉하는 한 쌍의 타겟(T1, T2)에 대하여 소정의 주파수로 교대로 극성을 반전시켜서 소정의 전위를 인가하는 제 1 방전 회로(E1)와, 상기 한 쌍의 타겟 중에서 제 1 방전 회로로부터 전위가 인가되고 있지 않은 전극과 그라운드의 사이에서 소정의 전위를 인가하는 제 2 방전 회로(E2)를 구비한다. 그리고, 제 2 방전 회로에는, 극성 반전시에 상기 전극의 적어도 한 쪽에 출력 전위와 반대인 전위를 인가하는 역전위 인가 수단(3)이 설치되어 있다. It is possible to suppress the occurrence of abnormal discharges due to the charge-up of the substrate, and to provide a power supply device capable of forming a thin film even for a large area substrate. The power supply device E of the present invention includes a first discharge circuit E1 for applying a predetermined potential by alternately inverting the polarity at a predetermined frequency with respect to the pair of targets T1 and T2 in contact with the plasma, and A second discharge circuit E2 for applying a predetermined potential between the ground and the electrode to which the potential is not applied from the first discharge circuit among the pair of targets is provided. The second discharge circuit is provided with reverse potential applying means 3 for applying a potential opposite to the output potential to at least one of the electrodes when the polarity is reversed.

Plasma processing apparatus

等离子体处理装置包括：具有第一不平衡端子、第二不平衡端子、第一平衡端子和第二平衡端子的巴伦；被接地的真空容器；被电连接至第一平衡端子的第一电极；以及被电连接至第二平衡端子的第二电极。当Rp表示从第一平衡端子和第二平衡端子的侧来看第一电极和第二电极的侧时的第一平衡端子与第二平衡端子之间的电阻成分，并且X表示第一不平衡端子与第一平衡端子之间的电感时，满足1.5≤X/Rp≤5000。

Sputtering method

Plasma enhanced chemical vapor deposition (PECVD) source

一个实施方案是关于一种等离子体源，所述等离子体源包括其中形成空腔的主体和设置于所述空腔内的至少两个自含式磁控管组件。所述磁控管组件彼此并且与所述主体互相电绝缘。在此类实施方案的一种实现方式中，所述自含式磁控管组件包括闭合漂移磁控管组件。公开了其它实施方案。

plasma processing unit

플라스마 처리 장치는, 제1 불평형 단자, 제2 불평형 단자, 제1 평형 단자 및 제2 평형 단자를 갖는 밸룬과, 접지된 진공 용기와, 상기 제1 평형 단자에 전기적으로 접속된 제1 전극과, 상기 제2 평형 단자에 전기적으로 접속된 제2 전극을 구비하고, 상기 제1 평형 단자 및 상기 제2 평형 단자의 측에서 상기 제1 전극 및 상기 제2 전극의 측을 보았을 때의 상기 제1 평형 단자와 상기 제2 평형 단자의 사이의 저항 성분을 Rp라고 하고, 상기 제1 불평형 단자와 상기 제1 평형 단자의 사이의 인덕턴스를 X라고 하였을 때, 1.5≤X/Rp≤5000을 만족한다. A plasma processing apparatus comprising: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal; a grounded vacuum container; a first electrode electrically connected to the first balanced terminal; and a second electrode electrically connected to the second balanced terminal, wherein the first balance when viewed from the side of the first balanced terminal and the second balanced terminal when viewed from the side of the first electrode and the second electrode When the resistance component between the terminal and the second balanced terminal is Rp and the inductance between the first unbalanced terminal and the first balanced terminal is X, 1.5≤X/Rp≤5000 is satisfied.

Reactive sputtering with hipims

본 발명에 따라, 기판에 형성되고 높은 종횡비를 갖는 공동(cavity)의 표면 위에 절연층을 스퍼터 증착하기 위한 방법 및 장치가 제공된다. 하우징에 의해 한정되는 실질적으로 폐쇄된 챔버에 절연층 및 기판에 포함된 재료로부터 적어도 부분적으로 형성된 타겟이 제공된다. 플라스마는 실질적으로 폐쇄된 챔버 내부에서 점화(igniting)되고 자기장은 플라스마를 타겟의 표면에 인접하게 적어도 부분적으로 함유하도록 타겟의 표면에 인접하게 제공된다. 전압은 급격히 증가하여 캐소드와 애노드 사이에 고출력 전기 펄스를 반복적으로 설정한다. 전기 펄스의 평균 출력은 0.1kW 이상이고, 선택적으로는 그보다 훨씬 클 수 있다. 스퍼터 증착의 작동 파라미터는 금속 모드와 반응 모드 사이의 이행 모드에서 절연층의 스퍼터 증착을 촉진하도록 조절된다. According to the present invention there is provided a method and apparatus for sputter depositing an insulating layer on a surface of a cavity formed on a substrate and having a high aspect ratio. A substantially closed chamber defined by the housing is provided with an insulating layer and a target at least partially formed from a material contained in the substrate. The plasma is ignited within the substantially closed chamber and the magnetic field is provided adjacent the surface of the target such that the plasma at least partially contiguous with the surface of the target. The voltage rapidly increases to repeatedly set a high output electric pulse between the cathode and the anode. The average power of the electric pulses is at least 0.1 kW, and optionally can be much larger. The operating parameters of the sputter deposition are adjusted to promote sputter deposition of the insulating layer in the transition mode between the metal and reactive modes.

High power sputtering source

本发明涉及一种磁控管溅镀方法，利用该方法可以将材料从靶表面溅射，使得所溅射的材料以离子形式高百分比地存在。根据本发明，这借助于简单的发生器来实现，该发生器的功率以分布在时间间隔中的方式馈入到多个磁控管溅镀源中，也就是说，在一时间间隔给一个溅镀源供应最大功率，并且在接下来的时间间隔中给下一个溅镀源供应最大功率。通过这种方式，实现了大于0.2A/cm 2 的放电电流密度。在关断时间期间，溅镀靶具有冷却的可能性，使得温度极限不被超过。

A device having two end blocks, an assembly and a sputter system comprising same, and a method of providing rf power to a target assembly using said device or assembly

스퍼터 시스템(600)에서 이용하기 위한 장치(602)가, 스퍼터 시스템의 대향 측면들에 배치된 적어도 제1 단부 블록(631) 및 제2 단부 블록(632)을 포함한다. 그러한 장치는, 적어도 하나의 표적 관 또는 스퍼터 마그네트론을 포함하는 표적 조립체가, 제1 및 제2 단부 블록(631, 632)에 장착될 때, 조립체의 양 측면에서 RF 전력으로 능동적으로 전력 공급될 수 있도록, 그리고 표적 조립체가, 장착될 때, 표적 관 또는 스퍼터 마그네트론의 양 극단에서 동시에 RF 전력으로 연속적으로 능동적으로 전력 공급되지 않도록, 구성된다. 그러한 장치 및 제어 유닛을 포함하는 조립체(601)와, RF 전력을 임피던스 표적 조립체에 적용하기 위한 방법이 또한 제공되고, 그러한 제어 유닛은, 장착되었을 때, 표적 조립체가 표적 관 또는 스퍼터 마그네트론의 양 극단에서 동시에 RF 전력으로 연속적으로 능동적으로 전력 공급되지 않도록, RF 전력에 의한 표적 조립체의 대향 측면들의 전력 공급을 제어한다. An apparatus 602 for use in sputter system 600 includes at least a first end block 631 and a second end block 632 disposed on opposite sides of the sputter system. Such a device can be actively powered with RF power on both sides of the assembly when a target assembly comprising at least one target tube or sputter magnetron is mounted to the first and second end blocks 631, 632. So that the target assembly, when mounted, is not actively powered continuously with RF power at the same time at both ends of the target tube or sputter magnetron. Also provided is an assembly 601 comprising such a device and a control unit, and a method for applying RF power to an impedance target assembly, wherein such a control unit, when mounted, includes the target assembly at both ends of the target tube or sputter magnetron. At the same time control the power supply of opposite sides of the target assembly by RF power, so as not to be actively powered continuously with RF power.

Substrate coating assembly using a sputtering device

Die Erfindung betrifft eine Zerstäubungsvorrichtung für reaktive Beschichtungen von Substraten, wobei die der Zerstäubungselektrode zugeführte elektrische Leistung zwischen zwei Werten pendelt. Die beiden Leistungswerte werden dabei so ausgewählt, daß sich bei gleichem Reaktivgaszufluß das Target der Zerstäubungselektrode beim ersten Leistungswert im metallischen Mode befindet, während es sich beim zweiten Leistungswert im oxidischen Mode befindet. The invention relates to an atomizing device for reactive coatings of Substrates, wherein the electrical power supplied to the sputtering electrode oscillates between two values. The two performance values are selected so that with the same reactive gas inflow the target of the atomizing electrode is in metallic fashion at the first power value, while at second power value is in oxidic mode.

Substrate coating assembly using a sputtering device

A method for stabilizing a working point in reactive sputtering in an oxygen-containing atmosphere

Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre, bei dem – wenigstens eine mit einer elektrischen Energiequelle verbundene Elektrode (20, 21) und ein zu beschichtendes Substrat (13) vorgesehen sind, und die wenigstens eine Elektrode (20, 21) mit einem zu zerstäubenden Metall (22, 23) versehen ist, dadurch gekennzeichnet, dass – der Sauerstoffzufluss konstant gehalten wird, – die der Entladung über die wenigstens eine Elektrode (20, 21) zugeführte elektrische Leistung zwischen einem ersten Leistungswert (P max ) und einem kleineren zweiten Leistungswert (P min ) periodisch umgeschaltet wird, sodass der durch die mittlere Leistung gekennzeichnete effektive Arbeitspunkt zwischen den beiden Leistungswerten liegt, und wobei der erste Leistungswert (P max ) einem Arbeitspunkt entspricht, der einem metallischen Mode entspräche, wenn nicht umgeschaltet würde, und wobei der zweite kleinere Leistungswert (P min ) einem Arbeitspunkt entspricht, der einem oxidischen Mode entspräche, wenn nicht umgeschaltet würde. A method for stabilizing a working point in reactive sputtering in an oxygen-containing atmosphere, wherein - At least one connected to an electrical energy source electrode (20, 21) and a substrate to be coated (13) are provided, and the at least one electrode (20, 21) with a metal to be sputtered (22, 23) is provided, characterized that - the oxygen flow is kept constant, - the electrical power supplied to the discharge via the at least one electrode (20, 21) is periodically switched between a first power value (P max ) and a smaller second power value (P min ), so that the effective operating point between the two indicated by the mean power Power values, and wherein the first power value (P max ) corresponds to an operating point that would correspond to a metallic mode, if not switched, and wherein the second smaller power value (P min ) corresponds to an operating point that would correspond ...

Configuration for coating a substrate by means of a sputtering device

A sputtering electrode is switched between two power values at a constant reactive gas flow rate which is selected so that the target of the sputtering electrode is in the metallic mode at the first power value while in the oxide mode at a second power value.

Sputtering equipment

Substrate coating method and appratus by reactive sputtering

본 발명은 두 개의 값 사이를 변화하는 스퍼터링 전극에 공급되는 전력을 사용하여 기질을 반응성 코팅하기 위한 스퍼터링 장치에 관한 것이다. 이 두 개의 전력 값은 같은 반응성 기체의 흐름에서 스퍼터링 전극의 타겟이 첫 번째 전력값에서는 금속 모드에 있고, 두 번째 전력값에서는 산화물 모드에 있도록 선택된다. The present invention relates to a sputtering apparatus for reactive coating a substrate using power supplied to a sputtering electrode that varies between two values. These two power values are chosen such that the target of the sputtering electrode in the same reactive gas flow is in metal mode at the first power value and in oxide mode at the second power value.

ASSEMBLY FOR THE COATING OF SUBSTRATES USING A SPRAYING DEVICE.

LA INVENCION SE REFIERE A UN DISPOSITIVO DE PULVERIZACION PARA RECUBRIMIENTO REACTIVO DE SUBSTRATOS, DONDE LA POTENCIA ELECTRICA GUIADA AL ELECTRODO DE PULVERIZACION OSCILA ENTRE DOS VALORES. AMBOS VALORES DE POTENCIA SON ELEGIDOS DE TAL MODO, QUE EN LA MISMA AFLUENCIA DE GAS REACTIVO EL OBJETIVO DEL ELECTRODO DE PULVERIZACION SE ENCUENTRA EN EL PRIMER VALOR DE POTENCIA EN UN MODO METALICO, MIENTRAS QUE EN EL SEGUNDO VALOR DE POTENCIA SE ENCUENTRA EN MODO DE OXIDO. THE INVENTION REFERS TO A SPRAYING DEVICE FOR REACTIVE SUBSTRATE COATING, WHERE GUIDED ELECTRIC POWER TO THE SPRAY ELECTRODE RUNS BETWEEN TWO VALUES. BOTH POWER VALUES ARE CHOSEN IN SUCH A WAY, THAT IN THE SAME REACTIVE GAS AFFECTION THE OBJECTIVE OF THE SPRAY ELECTRODE IS FOUND IN THE FIRST POWER VALUE IN A METALLIC MODE, WHILE IN THE SECOND POWER VALUE IT IS FOUND OXIDE.

Sputtering device for etching or coating a substrate and process for setting an operating point of said sputtering device

Method of ionized physical vapor deposition sputter coating high aspect-ratio structures

A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode inside the chamber. A magnet is positioned adjacent to cathode assembly. A platen that supports a substrate is positioned adjacent to the cathode assembly. An output of the power supply is electrically connected to the cathode assembly. The power supply generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge from the feed gas that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

Plasma source with segmented magnetron cathode

A plasma source includes a chamber for containing a feed gas. An anode is positioned in the chamber. A segmented magnetron cathode comprising a plurality of electrically isolated magnetron cathode segments is positioned in the chamber proximate to the anode. A power supply is electrically connected to an electrical in-put of a switch. A respective one of the plurality of electrical out-puts of the switch is electrically connected to a respective one of the plurality of magnetron cathode segments. The power supply generates a train of voltage pulses that ignites a plasma from the feed gas. Individual voltage pulses in the train of voltage pulses are routed by the switch in a predetermined sequence to at least two of the plurality of magnetron cathode segments.

Dual magnetron sputtering power supply and magnetron sputtering apparatus

Dual magnetron sputtering power supply and magnetron sputtering apparatus

A dual magnetron sputtering power supply for use with a magnetron sputtering apparatus having at least first and second sputtering cathodes (1, 4) for operation in the dual magnetron sputtering mode, there being a means (9, 10) for supplying a flow of reactive gas to each of said first and second cathodes via first and second flow control valves (12, 14) each associated with a respective one of said first and second cathodes and each adapted to control a flow of reactive gas to the respectively associated cathode, the power supply having, for each of said first and second cathodes a means for deriving a feedback signal relating to the voltage prevailing at that cathode, a control circuit for controlling the flow of reactive gas to the respectively associated cathode by controlling the respective flow control valve and adapted to adjust the respective flow control valve to obtain a voltage feedback signal from the respective cathode corresponding to a set point value set for that cathode. Also claimed is a magnetron sputtering apparatus in combination with such a power supply.

A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source

Method of an apparatus for sputtering

Preferential sputtering of insulators from conductive targets

Pulses of positive voltage are applied to the target of a dc sputtering process to create a reverse bias. This charges insulating deposits on the target to the reverse bias level, so that when negative sputtering voltage is reapplied to the target, the deposits will be preferentially sputtered away. The reverse bias pulses are provided at a low duty cycle, i.e., with a pulse width of 0.25-3 microseconds at a pulse rate of about 40-100 KHz. This technique reduces sources for arcing during a reactive sputtering process.

Arrangement for coating a substrate by means of a sputtering device

Arrangement for coating a substrate by means of a sputtering device

Configuration for Substrate Coating Using Sputtering Apparatus

본 발명은 두개의 값 사이를 변화하는 스퍼터링 전극에 공급되는 전력을 사용하여 기질을 반응성 코팅하기 위한 스퍼터링 장치에 관한 것이다. 이 두개의 전력 값은 반응성 기체의 흐름에서 스퍼터링 전극의 타겟이 첫 번째 전력값에서는 금속 모드에 있고, 두번째 전력값에서는 산화물 모드에 있도록 선택된다. 대표도:제3도

Sputtering device

(57)【要約】 【課題】 反応スパッタリングにおける動作点を迅速か つ容易に安定化させる。 【解決手段】 本発明は、基板の反応被覆のためのスパ ッタリング装置に関し、スパッタリング電極に供給され る電力を２つの値の間で交替に変化させる。その点で、 ２つの電力値は、同一の反応ガス流において、スパッタ リング電極のターゲットが、第１の電力値においては金 属モードで動作し、第２の電力値においては酸化物モー ドで動作するように選択される。

Device for treating substrates

Method and circuit arrangement for pulsed energy feed in magnetron discharges

Method for controlling a reactive high-power pulsed magnetron sputter process and corresponding device

The invention relates to the control of a reactive high-power pulsed sputter process. The invention particularly relates to a method for controlling a process of the aforementioned kind, wherein a controlled variable is measured and an adjustable variable is modified based on the measured controlled variable in order to adjust the controlled variable to a predetermined setting value. The method according to the invention is characterized by modifying the discharge capacity by varying the pulse frequency of the discharge.

Method for depositing a layer by means of a magnetron sputtering device

Verfahren zum Abscheiden einer Schicht auf einem Substrat (2) innerhalb einer Vakuumkammer (1) mittels einer Magnetronsputtereinrichtung umfassend, mindestens zwei mit jeweils einem Target bestückte Magnetronkatoden (3a; 3b), mindestens eine Zusatzelektrode (5), wobei jeder Magnetronkatode (3a; 3b) eine separate Stromversorgungseinrichtung (4a; 4b) zugeordnet wird und wobei neben mindestens einem Arbeitsgas mindestens ein Reaktivgas in die Vakuumkammer (1) eingelassen wird, dadurch gekennzeichnet, dassa) in einer ersten Phase von jeder Stromversorgungseinrichtung (4a; 4b) eine gepulste, negative Gleichspannung an die zugeordnete Magnetronkatode (3a; 3b) durchgeschaltet wird, wobei die Stromversorgungseinrichtungen (4a; 4b) im Gegentakt betrieben werden,b) in einer zweiten Phase die von den Stromversorgungseinrichtungen (4a; 4b) bereitgestellten gepulsten Gleichspannungen zwischen die zugehörige Magnetronkatode (3a; 3b) und die Zusatzelektrode (5) geschaltet werden,c) zwischen der ersten und der zweiten Phase mit einer Frequenz im Bereich von 1 Hz bis 10 kHz umgeschaltet wird,d) eine elektrische Spannung mit einer Frequenz größer 1 MHz an dem Substrat oder einer Substratrückelektrode (7) ausgebildet wird,e) das Einlassen des Reaktivgases in die Vakuumkammer (1) derart geregelt wird, dass das Sputtern der Targets im Übergangsmode erfolgt. A method for depositing a layer on a substrate (2) within a vacuum chamber (1) by means of a magnetron sputtering device comprising at least two magnetron cathodes (3a; 3b) each equipped with a target, at least one additional electrode (5), each magnetron cathode (3a; 3b ) a separate power supply device (4a; 4b) is assigned and wherein in addition to at least one working gas at least one reactive gas is admitted into the vacuum chamber (1), characterized in thata) in a first phase of each power supply device (4a; 4b) a pulsed, negative DC voltage is switched through to the associated magnetron cathode (3a; 3b), the power supply ...

Device for producing defined properties of gradient layers in a system of multilayer coatings in sputter systems.

Vorrichtung zur Herstellung definierter Eigenschaften von Gradientenschichten in einem System mehrlagiger Beschichtungen bei Sputter-Anlagen mit den folgenden Merkmalen: a) ein in einem gemeinsamen Prozessraum angeordnetes Kathodenpaar, bestehend aus einem ersten Kathodenkörper und einem zweiten Kathodenkörper, wird mittels einer gemeinsamen Stromversorgung mit Gleichstrom versorgt, wobei der Gleichstrom vor dem Eintritt in den Prozessraum in eine Impulsfolge mit abwechselnd positiven und negativen Impulsen mit zwischenliegenden Impulspausen umgewandelt wird, b) eine Anordnung zur Steuerung der Länge der einzelnen Impulse und der Dauer der jeweiligen Impulspausen, c) eine Anordnung zur Justierung der beiden Kathoden in der Weise, dass sich ein gemeinsamer Abscheidebereich auf dem zu beschichtenden Substrat ergibt. d) ein gemeinsames Prozessgas-System das die Grundversorgung des Prozessgases liefert, wobei jedem Kathodenkörper ein separates symmetrisch angeordnetes segmentiertes Prozessgassystem zugeordnet ist. Device for producing defined properties of gradient layers in a system of multilayer coatings in sputter systems with the following features: a) a cathode pair arranged in a common process chamber, comprising a first cathode body and a second cathode body, is supplied with direct current by means of a common power supply, wherein the direct current is converted into a pulse sequence with alternating positive and negative pulses with intermediate pulse intervals before entering the process space, b) an arrangement for controlling the length of the individual pulses and the duration of the respective pulse pauses, c) an arrangement for adjusting the two Cathodes in such a way that results in a common deposition region on the substrate to be coated. d) a common process gas system which supplies the basic supply of the process gas, wherein each cathode body is associated with a separate symmetrically arranged segmented process gas system.

Apparatus for coating substrates with vacuum

진공으로 기판(14)을 코팅하는 장치에 있어서, 이 장치는 가스방전으로 스퍼터되는 타겟과 전기적으로 상호작용하는 비어있는 코팅챔버(15)안에 배치된 2개의 음극(6,7)에 연결되어 있고 그 스퍼터된 입자가 기판(14)상에 침착하는 교류전류원(2)으로 이루어져 있는 한편, 프로세스가스가 코팅챔버(15)내로 이동되어지고, 그리고 필터로서 역할을 하고 변압기(3)와추가의 코일(5, 12, 13) 및 콘덴서(4, 8, 9, 10, 11)로 이루어져 있고, 안정한 코팅프로세스를 확보한다.

Rotating magnetron sputtering cathode apparatus and method of depositing material with the same

Sputtering apparatus

A magnetron assembly for a rotary target cathode comprises an elongated support structure, a magnet bar structure movably positioned below the support structure, and a plurality of drive modules coupled to the support structure. The drive modules each include a motorized actuation mechanism operatively coupled to the magnet bar structure. A controller and battery module is coupled to the support structure and is in operative communication with the drive modules. The controller and battery module includes an electronic controller and at least one rechargeable battery. The battery is configured to energize each motorized actuation mechanism and the electronic controller. One or more power generation modules is coupled to the support structure and in electrical communication with the battery, such that electrical energy output from the power generation modules recharges the battery.

Plasma processing apparatus

플라스마 처리 장치는, 제1 불평형 단자, 제2 불평형 단자, 제1 평형 단자 및 제2 평형 단자를 갖는 밸룬과, 접지된 진공 용기와, 상기 제1 평형 단자에 전기적으로 접속된 제1 전극과, 상기 제2 평형 단자에 전기적으로 접속된 제2 전극을 구비하고, 상기 제1 평형 단자 및 상기 제2 평형 단자의 측에서 상기 제1 전극 및 상기 제2 전극의 측을 보았을 때의 상기 제1 평형 단자와 상기 제2 평형 단자의 사이의 저항 성분을 Rp라고 하고, 상기 제1 불평형 단자와 상기 제1 평형 단자의 사이의 인덕턴스를 X라고 하였을 때, 1.5≤X/Rp≤5000을 만족한다.

Plasma enhanced chemical vapor deposition(pecvd) source

일 실시형태는, 공동이 형성된 본체; 및 상기 공동 내에 배치된 적어도 2개의 독립적인 마그네트론 조립체를 포함하는 플라즈마 공급원에 관한 것이다. 상기 마그네트론 조립체는 서로 간에 및 상기 본체와 상호 간에 전기적으로 절연된다. 이러한 실시형태의 일 구현예에서, 상기 독립적인 마그네트론 조립체는 밀폐된-드리프트형 마그네트론 조립체를 포함한다. 다른 실시형태도 개시된다.

Hard material layer

本发明涉及用电弧PVD方法在工件(30)上沉积的作为功能层(32)的一种硬材料层，其中该功能层主要构成为由元素周期表的副族IV、V、VI的过渡金属和Al、Cr、Fe、Ni、Co、Y中至少一种金属(Me)组成的电绝缘的氧化物，并且功能层(32)不含有惰性气体也不含有卤素。

Ac power connector, sputtering apparatus and method therefor

디바이스와 AC 전력 공급부를 연결시키기 위한 AC 전력 커넥터가 제공된다. AC 전력 커넥터는, AC 전력 공급부와 연결가능한 적어도 하나의 제 1 엘리먼트, 및 디바이스와 연결가능한 적어도 하나의 제 2 엘리먼트를 포함하며, 제 1 엘리먼트 및 제 2 엘리먼트들은, 캐패시턴스를 정의하기 위해, 서로에 대하여 제 1 거리로 배열되고, 적어도 하나의 제 1 엘리먼트 및 적어도 하나의 제 2 엘리먼트는 서로에 대하여 회전가능하고, 제 1 엘리먼트 및 제 2 엘리먼트는, 적어도 하나의 제 1 엘리먼트 및 적어도 하나의 제 2 엘리먼트 사이의 AC 전력의 전달을 위해 구성된다. An AC power connector is provided for connecting the device to the AC power supply. The AC power connector includes at least one first element connectable with an AC power supply, and at least one second element connectable with a device, and the first element and the second elements are connected to each other to define the capacitance. Arranged at a first distance with respect to each other, the at least one first element and the at least one second element are rotatable relative to each other, and the first element and the second element are at least one first element and at least one second element It is configured for the transfer of AC power between elements.

Plasma treatment device

Pulsed power module with pulse and ion flux control for magnetron sputtering

An electrical power pulse generator system and a method of the system's operation are described herein. A main energy storage capacitor supplies a negative DC power and a kick energy storage capacitor supplies a positive DC power. A main pulse power transistor is interposed between the main energy storage capacitor and an output pulse rail and includes a main power transmission control input for controlling power transmission from the main energy storage capacitor to the output pulse rail. A positive kick pulse power transistor is interposed between the kick energy storage capacitor and the output pulse rail and includes a kick power transmission control input for controlling power transmission from the kick energy storage capacitor to the output pulse rail. A positive kick pulse power transistor control line is connected to the kick power transmission control input of the positive kick pulse transistor.

Current change limiting device

In a method of limiting the current (I out) flowing between a plasma chamber (3) and a power supply (2), wherein the current change di/dt is limited if the current exceeds a predetermined current by a by a current change limiting device (7, 40) which is provided in the current path between the power supply (2) and the plasma chamber (3).

Electrical Power Supply for Sputter

The present invention relates to a power supply for a sputter, capable of repetitively applying a pulse signal interval and a black signal interval to a cathode portion of a sputter. The pulse signal interval includes a first signal array for generating a first stepped voltage to the cathode portion; and a second pulse signal array for generating a second stepped voltage, which is close to the first pulse signal array and higher in voltage than the first stepped voltage, to the cathode portion. The black signal interval is close to the pulse signal interval and does not include a pulse signal array.

Method of producing amorphous silicon for hard mask and waveguide applications

A specialized physical vapor deposition process provides dense amorphous semiconducting material with exceptionally smooth morphology. In particular, the process provides dense, smooth amorphous silicon useful as a hard mask for etching optical and semiconductor devices and as a high refractive index material in optical devices. DC sputtering of a planar target of intrinsic crystalline semiconducting material in the presence of a sputtering gas under a condition of uniform target erosion is used to deposit amorphous semiconducting material on a substrate. DC power that is modulated by AC power is applied to the target. The process provides dense, smooth amorphous silicon at high deposition rates. A method of patterning a material layer including forming a hard mask layer of amorphous silicon on a material layer according to the present DC sputtering process is also provided. The low average surface roughness of the amorphous silicon hard mask is reflected in the low average surface roughness of the sidewalls of the etched material layer. In addition, a method of forming optical devices in which the DC sputtered amorphous semiconductor materials are used as the high refractive index material is provided.

Physical vapor deposition of semiconducting and insulating materials

The invention provides an apparatus for depositing semiconducting, insulating, and particularly, high dielectric constant (HDC) material, such as barium strontium titanate, on a substrate through reactive sputtering. The apparatus comprises a physical vapor deposition chamber having an asymmetric bipolar pulsed direct current power source supplying a first bias to a target and a second bias to the substrate support member in the chamber. The pulsed direct current power source supplies an electrical waveform comprising a negative deposition voltage that attracts the argon ions to cause sputtering from the target and a reverse small positive neutralization voltage to cause charge neutralisation of the target that eliminates arcing and micro-arcing on the target surface. Preferably, the first bias is synchronized with the second bias for the deposition period and the neutralization period. A floating-ground shield surrounds the processing region between the target and the substrate. A first gast inlet introduces a gas for the plasma through the top portion of the chamber, and a second gas inlet introduces a reaction gas adjacent the substrate surface to react with the sputtered material to form the HDC film on the substrate.