27-03-2014 дата публикации
Номер: US20140087544A1
Sn-containing precursors for deposition of Sn-containing films and methods of using are provided herein. In some embodiments, Sn-containing precursors are methylated and/or hydrogenated and/or deuteriated. In some embodiments, methods of chemical vapor deposition are provided. 1. A CVD method for forming an epitaxial film comprising Sn on a substrate within a reaction chamber , the method comprising:providing a substrate disposed within a reaction chamber; and [{'br': None, 'sub': 3', '4-n', 'n, 'Sn(CH)X, in which X═H, D, Cl or Br, and n=0, 1, 2, or 3; \u2003\u2003Formula (I)'}, {'br': None, 'sub': 3', '3-n', 'n, 'ZSn(CH)X, in which Z═H or D, X═Cl or Br, and n═0, 1, or 2; \u2003\u2003Formula (II)'}, {'br': None, 'sub': 2', '3', '2-n', 'n, 'ZSn(CH)X, in which Z═H or D, X═Cl or Br, and n=0, or 1; or \u2003\u2003Formula (III)'}, {'br': None, 'sub': '4', 'SnBr; and \u2003\u2003(IV)'}], 'contacting an epitaxial surface of the substrate with a Sn precursor comprisinga second precursor comprising at least one of Si or Ge, thereby forming an epitaxial film comprising Sn.2. The method of claim 1 , wherein the epitaxial surface of the substrate comprises Si.3. The method of claim 1 , wherein the film comprising Sn comprises about 20% Sn or less.4. The method of claim 1 , wherein the film comprising Sn comprises about 5% Sn or less.5. The method of claim 1 , wherein the second precursor comprises a Group III claim 1 , Group IV claim 1 , or Group V element.6. The method of claim 1 , wherein the second precursor comprises a Group IV element.7. The method of claim 1 , wherein the second precursor comprises Ge.8. The method of claim 1 , further comprising contacting the epitaxial surface of the substrate with a dopant precursor.9. The method of claim 8 , wherein the dopant precursor comprises at least one of B claim 8 , Ga claim 8 , In claim 8 , As claim 8 , P claim 8 , or Sb.10. The method of claim 2 , wherein the film comprising Sn comprises a buffer layer for integration of ...
Подробнее
