ELECTROCONDUCTIVE BONDING MATERIAL, METHOD FOR BONDING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

An electro-conductive bonding material includes: metal components of a high-melting-point metal particle that have a first melting point or higher; a middle-melting-point metal particle that has a second melting point which is first temperature or higher, and second temperature or lower, the second temperature is lower than the first melting point and higher than the first temperature; and a low-melting-point metal particle that has a third melting point or lower, the third melting point is lower than the first temperature.

Electroconductive bonding material comprising three types of metal particles with different melting points and its use for bonding an electronic component to a substrate

An electro-conductive bonding material (20,30) includes: high-melting-point metal particles with a component having a first melting point, middle-melting-point metal particles having a second melting point, lower than the first melting point, low-melting-point metal particles having a third melting point, lower than the second melting point and preferably a flux. The high-melting-point metal particles include Au, Ag, Cu, Au-plated Cu, Sn-Bi-plated Cu and Ag-plated Cu particles. The middle-melting-point metal particles include Sn-Bi and Sn-Bi-Ag particles. The low-melting-point metal particles include Sn-Bi-ln and Sn-Bi-Ga particles. The electro-conductive bonding material (20,30) is used for bonding a substrate (6) and an electronic component (8). A method for bonding comprises supplying the electro-conductive bonding material (e.g. by paste printing) to any one of an electrode (7) of a substrate (6) and a terminal of an electronic component (8) (e.g. an Au bump (9)), heating the supplied ...

STRUCTURES AND METHODS FOR LOW TEMPERATURE BONDING

一种制造一组件的方法可包含在一第一构件的一基板的一第一表面形成一第一导电的元件；藉由曝露到一无电的电镀浴以在所述导电的元件的一表面形成导电的纳米粒子；并列所述第一导电的元件的所述表面以及在一第二构件的一基板的一主要的表面的一第二导电的元件的一对应的表面；以及至少在所述并列的第一及第二导电的元件的介面升高一温度至一接合温度，所述导电的纳米粒子在所述接合温度下使得冶金的接合点形成在所述并列的第一及第二导电的元件之间。所述导电的纳米粒子可被设置在所述第一及第二导电的元件的表面之间。所述导电的纳米粒子可以具有小于100纳米的长度尺寸。

Semiconductor element and forming method

CONDUCTIVE BONDING MATERIAL AND A CONDUCTOR JOINING METHOD CAPABLE OF EFFECTIVELY JOINING SUBSTRATES AND ELECTRONIC COMPONENTS AT LOW TEMPERATURES OF UNDER 150 °C

PURPOSE: A conductive bonding material and a conductor joining method are provided to remain components having a low melting point after a primary thermal treatment because the conductive bonding material contains metal components having three-stepped melting points. CONSTITUTION: A conductive bonding material(20) comprises metal particles(21) having a high melting point over a first melting point, metal particles(22) having a middle melting point, and metal particles(23) having a low melting point. The metal particles having the middle melting point have a second melting point which is over a first temperature and under a second temperature being lower than the first melting point. The metal particles having the low melting point have a third melting point under the first temperature. The high melting point is over 150 °C, the middle melting point is within 80-139 °C, and the low melting point is under 79 °C. COPYRIGHT KIPO 2012 ...

Doping minor elements into metal bumps

DOPING MINOR ELEMENTS INTO METAL BUMPS, CAPABLE OF ACCURATELY CONTROLLING THE THICKNESS OF SOME ELEMENT INCLUDING LAYER

PURPOSE: Doping minor elements into metal bumps are provided to improve manufacturing costs and the property of a metal pump by adding some elements of a plurality of types. CONSTITUTION: In doping minor elements into metal bumps, a wafer including a substrate(10) is provided. A semiconductor device(14) is formed in the surface of the substrate. An interconnect structure(12) is electrically combined with the semiconductor device. The interconnect structure comprises an inter-layer dielectric and an inter-metal dielectric. A metal pad(28) is formed on the interconnect structure. COPYRIGHT KIPO 2012 ...

Doping Minor Elements into Metal Bumps

A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

DOPING MINOR ELEMENTS INTO METAL BUMPS

기판 제조 방법은 기판을 마련하는 단계와, 기판 위에 솔더 범프를 형성하는 단계를 포함한다. 소수 엘리먼트가 솔더 범프의 상면에 인접한 영역에 도입된다. 다음에 소수 엘리먼트를 솔더 범프로 도출하기 위해 솔더 범프에 대한 리플로우 공정이 수행된다.

STRUCTURES AND METHODS FOR LOW TEMPERATURE BONDING

A method of making an assembly can include forming a first conductive element at a first surface of a substrate of a first component, forming conductive nanoparticles at a surface of the conductive element by exposure to an electroless plating bath, juxtaposing the surface of the first conductive element with a corresponding surface of a second conductive element at a major surface of a substrate of a second component, and elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles cause metallurgical joints to form between the juxtaposed first and second conductive elements. The conductive nanoparticles can be disposed between the surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers.

Electroconductive bonding material comprising three types of metal particles with different melting points and its use for bonding an electronic component to a substrate

An electro-conductive bonding material (20,30) includes: high-melting-point metal particles with a component having a first melting point, middle-melting-point metal particles having a second melting point, lower than the first melting point, low-melting-point metal particles having a third melting point, lower than the second melting point and preferably a flux. The high-melting-point metal particles include Au, Ag, Cu, Au-plated Cu, Sn-Bi-plated Cu and Ag-plated Cu particles. The middle-melting-point metal particles include Sn-Bi and Sn-Bi-Ag particles. The low-melting-point metal particles include Sn-Bi-ln and Sn-Bi-Ga particles. The electro-conductive bonding material (20,30) is used for bonding a substrate (6) and an electronic component (8). A method for bonding comprises supplying the electro-conductive bonding material (e.g. by paste printing) to any one of an electrode (7) of a substrate (6) and a terminal of an electronic component (8) (e.g. an Au bump (9)), heating the supplied ...

Structures and methods for low temperature bonding using nanoparticles

A method of making an assembly can include forming a first conductive element at a first surface of a substrate of a first component, forming conductive nanoparticles at a surface of the conductive element by exposure to an electroless plating bath, juxtaposing the surface of the first conductive element with a corresponding surface of a second conductive element at a major surface of a substrate of a second component, and elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles cause metallurgical joints to form between the juxtaposed first and second conductive elements. The conductive nanoparticles can be disposed between the surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers.

STRUCTURES AND METHODS FOR LOW TEMPERATURE BONDING USING NANOPARTICLES

A method of making an assembly can include forming a first conductive element at a first surface of a substrate of a first component, forming conductive nanoparticles at a surface of the conductive element by exposure to an electroless plating bath, juxtaposing the surface of the first conductive element with a corresponding surface of a second conductive element at a major surface of a substrate of a second component, and elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles cause metallurgical joints to form between the juxtaposed first and second conductive elements. The conductive nanoparticles can be disposed between the surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers.

Doping minor elements into metal bumps

A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

Doping Minor Elements into Metal Bumps

A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

Structures and methods for low temperature bonding

一種製造一組件之方法可包含在一第一構件的一基板的一第一表面形成一第一導電的元件；藉由曝露到一無電的電鍍浴以在該導電的元件的一表面形成導電的奈米粒子；並列該第一導電的元件的該表面以及在一第二構件的一基板的一主要的表面的一第二導電的元件的一對應的表面；以及至少在該些並列的第一及第二導電的元件的介面升高一溫度至一接合溫度，該些導電的奈米粒子在該接合溫度下係使得冶金的接合點形成在該些並列的第一及第二導電的元件之間。該些導電的奈米粒子可被設置在該第一及第二導電的元件的表面之間。該些導電的奈米粒子可以具有小於100奈米的長度尺寸。

Doping minor elements into metal bumps

Electroconductive bonding material, method for bonding conductor, and method for manufacturing semiconductor device

An electro-conductive bonding material includes: metal components of a high-melting-point metal particle that have a first melting point or higher; a middle-melting-point metal particle that has a second melting point which is first temperature or higher, and second temperature or lower, the second temperature is lower than the first melting point and higher than the first temperature; and a low-melting-point metal particle that has a third melting point or lower, the third melting point is lower than the first temperature.

Electroconductive bonding material, method for bonding conductor, and method for manufacturing semiconductor device

An electro-conductive bonding material includes: metal components of a high-melting-point metal particle that have a first melting point or higher; a middle-melting-point metal particle that has a second melting point which is first temperature or higher, and second temperature or lower, the second temperature is lower than the first melting point and higher than the first temperature; and a low-melting-point metal particle that has a third melting point or lower, the third melting point is lower than the first temperature.

Structures and methods for low temperature bonding using nanoparticles

A method of making an assembly can include forming a first conductive element at a first surface of a substrate of a first component, forming conductive nanoparticles at a surface of the conductive element by exposure to an electroless plating bath, juxtaposing the surface of the first conductive element with a corresponding surface of a second conductive element at a major surface of a substrate of a second component, and elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles cause metallurgical joints to form between the juxtaposed first and second conductive elements. The conductive nanoparticles can be disposed between the surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers.

Semiconductor element and forming method

本发明一实施例提供一种半导体元件及其形成方法，其中半导体元件的形成方法包括：提供一基底；于该基底上形成一焊料凸块；将一少量元素导入至一区域中，该区域邻接该焊料凸块的一顶表面；以及对该焊料凸块进行一回焊工艺以驱使该少量元素进入该焊料凸块之中。采用本发明的实施例，在公知技术中不适合加进金属凸块中的许多类型的少量元素现可被添加。因此，金属凸块的性质可获显著的提升。

CONDUCTIVE JOINTING MATERIAL, METHOD OF JOINTING CONDUCTOR, AND METHOD OF MANUFACTURING SEMICONDUCTOR

PROBLEM TO BE SOLVED: To provide a conductive jointing material whereby a conductive jointing material supply process for depositing the conductive jointing material while supplying the conductive jointing material to the electrode of a substrate and a transfer process for transferring the conductive jointing material to the terminal of an electronic component by fusing it once can be selected, and the electronic component can be efficiently jointed to the substrate at low temperatures of 150°C or lower, and to provide a method of jointing a conductor and a method of manufacturing a semiconductor. SOLUTION: The conductive jointing material contains a metal component comprising a high melting-point metal particle having a melting point of 150°C or higher, an intermediate melting-point metal particle having a melting point of not less than 80°C and not more than 139°C, and a low melting-point metal particle having a melting point of 79°C or lower. The metal component is preferably a multi-layer ...

Pin-grid-array-type semiconductor package

A semiconductor package of a pin-grid-array type includes a bump pad on a first substrate, a metal socket on a second substrate, a core material for reverse reflow on the bump pad, and solder paste or a solder bump forming a solder layer on the core material for reverse reflow. The solder paste or the solder bump is in contact with the bump pad. The core material for reverse reflow and the solder paste or the solder bump bonded to the core material for reverse reflow are used as a pin and detachably attached to the metal socket. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

Electroconductive bonding material and method for bonding conductor

본 발명은 도전성 접합 재료를 기판의 전극에 공급하면서 용착시키는 도전성 접합 재료 공급 공정, 및 전자 부품의 단자에 도전성 접합 재료를 한번 용융시켜서 전사하는 전사 공정을 선택할 수 있고, 기판과 전자 부품을 150 ℃ 이하의 저온에서 효율적으로 접합할 수 있는 도전성 접합 재료 및 도체의 접합 방법, 및 반도체 장치의 제조 방법을 제공하는 것을 목적으로 한다. 융점 150 ℃ 이상의 고융점 금속 입자와, 융점 80 ℃ 이상 139 ℃ 이하의 중융점 금속 입자와, 융점 79 ℃ 이하의 저융점 금속 입자로 이루어지는 금속 성분을 함유하는 도전성 접합 재료에 있어서, 상기 금속 성분이 고융점 금속 입자 표면에, 중융점 금속 입자로 형성된 중융점 금속층과, 저융점 금속 입자로 형성된 저융점 금속층을 이 순서로 갖는 다층 금속 입자인 양태 등이 바람직하다.

핀 그리드 어레이 방식의 반도체 패키지

본 발명의 기술적 사상에 따른 반도체 패키지는, 제1 기판에 배치되는 범프 패드, 제2 기판에 배치되는 금속 소켓, 범프 패드에 배치되는 리버스 리플로우용 심재, 리버스 리플로우용 심재에 솔더층을 형성하며 범프 패드와 맞닿는 솔더 페이스트 또는 솔더 범프를 포함하고, 리버스 리플로우용 심재 및 리버스 리플로우용 심재와 접합된 솔더 페이스트 또는 솔더 범프가 핀의 역할을 수행하여 금속 소켓에 탈부착되고, 범프 패드의 제1 직경은 리버스 리플로우용 심재의 제2 직경보다 작거나 동일하고, 리버스 리플로우용 심재는 코어, 코어의 직접 위에 코팅되고 니켈(Ni) 또는 코발트(Co)인 제1 금속층, 및 제1 금속층의 직접 위에 코팅되고 금(Au) 또는 백금(Pt)인 제2 금속층을 포함한다.

금속 범프로의 소수 엘리먼트들의 도핑

기판 제조 방법은 기판을 마련하는 단계와, 기판 위에 솔더 범프를 형성하는 단계를 포함한다. 소수 엘리먼트가 솔더 범프의 상면에 인접한 영역에 도입된다. 다음에 소수 엘리먼트를 솔더 범프로 도출하기 위해 솔더 범프에 대한 리플로우 공정이 수행된다.