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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 24. Отображено 24.
04-09-2015 дата публикации

Leader-free solder and semiconductor component comprising the same

Номер: KR0101549810B1

... 본 발명은 무연 솔더 및 그를 포함하는 반도체 부품에 관한 것으로서, 더욱 구체적으로는 구리(Cu) 0.5 중량% 내지 1.0 중량% 및 팔라듐(Pd) 0.001 중량% 내지 0.1 중량%를 포함하고, 잔부가 주석(Sn)인 무연 솔더 및 그를 포함하는 반도체 부품에 관한 것이다. 본 발명은 친환경적일 뿐만 아니라 고온 안정성이 우수하고 또한 젖음성이 우수하여 자동차용 반도체에 유용하게 사용 가능한 무연 솔더를 얻을 수 있는 효과가 있다.

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19-06-2017 дата публикации

CORE FOR REVERSE REFLOW, SEMICONDUCTOR PACKAGE, ELECTRONIC SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE

Номер: KR1020170068422A
Принадлежит:

The present invention relates to a core material for reverse reflow, a semiconductor package, and a method for manufacturing the semiconductor package. More specifically, the present invention relates to a semiconductor package having a semiconductor device having a bump pad; and a bump part coupled to the bump pad. At this time, the bump part includes a core; a first metal layer coated over the core; a second metal layer coated on the first metal layer; and a solder layer coated on the second metal layer. The thickness of the solder layer may become thinner away from the bump pad. By using the core material for reverse reflow, the semiconductor package and the method of manufacturing the semiconductor package, it is possible to manufacture the semiconductor package with excellent bonding strength with high precision. COPYRIGHT KIPO 2017 ...

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20-06-2013 дата публикации

ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME

Номер: WO2013089365A1
Принадлежит:

The present invention provides an anode active material for a secondary battery, which is capable of providing high-capacity, high-efficiency charging and discharging characteristics. The anode active material for a secondary battery according to one embodiment of the present invention comprises: a silicon single phase; and a silicon-metal alloy phase distributed around the silicon single phase, wherein the silicon-metal alloy phase comprises copper, iron, titanium and nickel.

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19-03-2015 дата публикации

SILVER ALLOY BODING WIRE AND SEMICONDUCTOR DEVICE USING SAME

Номер: WO2015037876A1
Принадлежит:

The present invention relates to a silver alloy bonding wire and a semiconductor device using the same, and more specifically, to a silver alloy bonding wire containing silver as a main component and 3 weight ppm to 10000 weight ppm of iridium (Ir), and to a semiconductor device using the same. When the bonding wire of the present invention is used, a bonding wire having excellent bonding characteristics and processability and high reliability can be provided.

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05-01-2016 дата публикации

Ag alloy bonding wire and a semiconductor device comprising the same

Номер: KR0101582449B1
Принадлежит: 엠케이전자 주식회사

... 본 발명은 은 합금 본딩 와이어 및 이를 이용한 반도체 장치에 관한 것으로서, 더욱 구체적으로는 은(Ag)을 주성분으로 하고 이리듐(Ir)을 3 중량ppm 내지 10000 중량ppm 함유하는 은 합금 본딩 와이어 및 이를 이용한 반도체 장치에 관한 것이다. 본 발명의 본딩 와이어를 이용하면 본딩 특성과 가공성이 우수하고 신뢰성이 높은 본딩 와이어를 제공할 수 있는 효과가 있다.

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15-05-2014 дата публикации

TIN-BASED SOLDER BALL AND SEMICONDUCTOR PACKAGE INCLUDING SAME

Номер: WO2014073716A1
Принадлежит:

The technical idea of the present invention provides an alloyed tin-based solder ball having characteristics required for a solder ball to be adapted for use with an electronic product and the like. The tin-based solder ball according to one embodiment of the present invention comprises: 0.3 wt% to 3.0 wt% Ag; 0.4 wt% to 0.8 wt% Cu; 0.01 wt% to 0.09 wt% Ni; 0.1 wt% to 0.5 wt% Bi, and the remaining part contains Sn and inevitable impurities.

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12-06-2017 дата публикации

RETAINING PANEL ASSEMBLY

Номер: KR101745570B1
Принадлежит: SANGLEE CONSTRUCTION CO., LTD.

A retaining panel assembly is disclosed. According to the present invention, a retaining panel assembly comprises: a frame unit disposed in a retaining installation area; a plurality of retaining panels provided to the frame unit; and a furring strip unit provided to be lifted to the frame unit and supporting the retaining panels. COPYRIGHT KIPO 2017 ...

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02-09-2016 дата публикации

SOLDER BALL FOR FLUXLESS BONDING, METHOD OF MANUFACTURING SAME, AND METHOD OF FORMING SOLDER BUMP

Номер: KR1020160103922A
Принадлежит:

The present invention relates to a solder ball for fluxless bonding, a method of manufacturing the same, and a method of forming a solder bump and, more specifically, provides a solder ball for fluxless bonding comprising: a solder core; a first metal layer on a surface of the solder core; and a second metal layer on the first metal layer. The first metal layer comprises at least one of nickel (Ni), silver (Ag), zinc (Zn), tin (Sn), chromium (Cr), antimony (Sb), platinum (Pt), palladium (Pd), aluminum (Al), or an alloy thereof. The second metal layer comprises gold (Au). As the above solder ball for fluxless bonding is in use, a solder bump having high reliability may be formed via a relatively short, low costs, and a simple process. COPYRIGHT KIPO 2016 ...

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24-07-2015 дата публикации

Silver alloy bonding wire and manufacturing method thereof

Номер: KR0101535412B1
Принадлежит: 엠케이전자 주식회사

... 본 발명은 은(Ag)을 주성분으로 하고, 팔라듐(Pd) 및 금(Au)을 포함하는 은 합금 본딩 와이어에 관한 것으로서, 더욱 구체적으로는 팔라듐(Pd)의 함량이 0.1 내지 4.0 중량%이고, 팔라듐(Pd)에 대한 금(Au)의 중량기준 함량비가 0.25 내지 1.0인 은 합금 본딩 와이어에 관한 것이다. 본 발명의 은 합금 본딩 와이어를 이용하면 와이어 선단에 형성되는 볼의 볼모양 균일성과 본딩볼 형상이 개선되고 신뢰성, 루프 직진성, 및 접합 강도가 우수한 효과가 있다.

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27-07-2016 дата публикации

BONDING WIRE

Номер: KR1020160089161A
Принадлежит:

A bonding wire according to the technical idea of the present invention includes a wire core material containing at least one among Pt, Pd, Rh, Os, Au, and Ni, and a coating layer made of Au formed on the outer surface of the wire core material. So, the uniformity of the shape of a ball formed at an end of the wire can be improved. COPYRIGHT KIPO 2016 ...

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24-01-2017 дата публикации

솔더볼 및 이를 이용한 반도체 장치

Номер: KR0101699256B1
Принадлежит: 엠케이전자 주식회사

... 본 발명은 솔더볼 및 이를 이용한 반도체 장치에 관한 것으로서, 보다 구체적으로는 코어볼 위에 제 1 도금층 및 제 2 도금층을 순차 포함하는 솔더볼에 관한 것이다. 여기서, 상기 제 2 도금층은 주석(Sn)-은(Ag)-구리(Cu)를 포함하고, 상기 제 2 도금층 내에 Ag3Sn 또는 Ag-Sn 화합물인 나노입자가 존재할 수 있다. 본 발명의 솔더볼은 구형도와 스탠드 오프 특성이 우수하여 접속 신뢰도가 뛰어나 집적도가 높은 반도체 장치를 구현할 수 있게 하는 효과가 있다.

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13-03-2014 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Номер: WO2014038850A1
Принадлежит:

The present invention relates to a bonding wire for a semiconductor device and a manufacturing method therefor and, more particularly, to a method for manufacturing a bonding wire for a semiconductor device, comprising the steps of: forming a first coating layer having a second metal as a main component on a core material having a first metal as a main component; wire-drawing the core material on which the first coating layer is formed; and forming a second coating layer having a third metal as a main component on the core material and the first coating layer for which the wire drawing has been completed. When a bonding wire and a manufacturing method therefor of the present invention are used, damage to a chip can be reduced while preventing the exposure of the core material, and the acid resistance and bonding properties of a second side can be improved.

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20-12-2016 дата публикации

본딩 와이어

Номер: KR0101687597B1
Принадлежит: 엠케이전자 주식회사

... 본 발명의 기술적 사상에 의한 본딩 와이어는, 은(Ag)을 주성분으로 하고, 백금(Pt), 팔라듐(Pd), 로듐(Rh), 오스뮴(Os), 금(Au) 및 니켈(Ni) 중 적어도 하나 이상의 원소를 함유하는 와이어 심재 및 와이어 심재의 외표면에 형성되는 금(Au) 재질의 피복층을 포함한다.

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08-08-2013 дата публикации

ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY, AND SECONDARY BATTERY INCLUDING SAME

Номер: WO2013115473A1
Принадлежит:

The present invention provides an anode active material for a secondary battery which can provide charging and discharging characteristics, such as high capacity and high efficiency. The anode active material for a secondary battery according to one embodiment of the present invention comprises: 0 at% (atomic percent) - 30 at% of a first element group consisting of copper (CU), iron(Fe), or mixtures thereof; 0 at% - 20 at% of a second element group consisting of titanium (Ti), nickel (Ni), manganese (Mn), aluminum (Al), chromium (Cr), cobalt (Co), zinc (Zn), boron (B), beryllium (Be), molybdenum (Mo), tantalum (Ta), sodium (Na), strontium (Sr), phosphorus (P), or mixtures thereof; balance of silicon and other inevitable impurities.

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23-10-2014 дата публикации

METHOD FOR IMPROVING COLOR RENDERING OF ARTIFICIAL LIGHT SOURCE

Номер: WO2014171581A1
Принадлежит:

The present invention relates to a method for improving color rendering of an artificial light source and, more specifically, to a method for improving color rendering by changing driving conditions of an artificial light source without adjusting R, G and B ratios or color rendering of a phosphor. The present invention can improve color rendering by varying driving conditions for emitting light by applying power to an artificial light source, and, when the artificial light source is an FED, can improve color rendering by varying a frequency and a voltage of a bipolar pulse signal applied to a gate and a cathode.

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12-06-2017 дата публикации

EARTH RETAINING METHOD

Номер: KR101745566B1
Принадлежит: SANGLEE CONSTRUCTION CO., LTD.

The present invention discloses an earth retaining method. According to the present invention, the earth retaining method comprises: a step of arranging a plurality of earth retaining panel assembly in an earth retaining installment area wherein the plurality of earth retaining panel are provided with a frame portion, an earth retaining panel provided on the frame portion, and a wailing portion coupled to the frame portion such that the wailing portion is able to elevate; a step of supporting one side portion of a strut on the wailing portion of one of the plurality of earth retaining panel assemblies, and the other side portion of the strut on the wailing portion of another earth retaining panel assembly facing the earth retaining panel assembly; and a step of adjusting a length and a fixated position of the strut such that the earth retaining panel assembly is attached to a wall portion of the earth retaining installment area. As such, the present invention provides the earth retaining ...

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26-12-2017 дата публикации

무플럭스 접합용 솔더볼, 그의 제조 방법 및 솔더 범프 형성 방법

Номер: KR0101811992B1
Принадлежит: 엠케이전자 주식회사

... 본 발명은 무플럭스 접합용 솔더볼, 그의 제조 방법 및 솔더 범프 형성 방법에 관한 것으로서, 더욱 구체적으로는 솔더 코어; 상기 솔더 코어의 표면 상의 제 1 금속층; 및 상기 제 1 금속층 상의 제 2 금속층을 포함하고, 상기 제 1 금속층은 니켈(Ni), 은(Ag), 아연(Zn), 주석(Sn), 크롬(Cr), 안티몬(Sb), 백금(Pt), 팔라듐(Pd), 알루미늄(Al), 또는 이들의 합금이고, 상기 제 2 금속층은 금(Au)인 무플럭스 접합용 솔더볼을 제공한다. 본 발명의 무플럭스 접합용 솔더볼을 이용하면 신뢰성 높은 솔더 범프를 더욱 짧은 시간 내에 저렴한 비용으로 더욱 간단한 공정을 통해 형성할 수 있다.

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19-07-2017 дата публикации

RETAINING WALL PANEL ASSEMBLY HAVING SUPPORT FOR RETAINING WALL METHOD

Номер: KR101753223B1
Принадлежит: SANGLEE CONSTRUCTION CO., LTD.

A support for a retaining wall method is disclosed. According to the present invention, the support for a retaining wall method comprises: a support frame connected to a strip unit disposed in a retaining wall installation area; a locking unit provided to both end parts of the support frame to be coupled to the strip unit; an interval control unit provided to the support frame to change the length of the support frame; and a roller provided to the locking unit to be supported to be rotated by the strip unit. COPYRIGHT KIPO 2017 ...

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12-03-2015 дата публикации

SILVER ALLOY BONDING WIRE AND METHOD FOR MANUFACTURING SAME

Номер: WO2015034287A1
Принадлежит:

The present invention relates to a silver alloy bonding wire containing silver (Ag) as a main component, palladium (Pd), and gold (Au), and, more specifically, to an alloy bonding wire in which the palladium (Pd) content is 0.1 to 0.4 wt% and the weight content ratio of gold (Au) to palladium (Pd) is 0.25 to 1.0. The use of the silver alloy bonding wire of the present invention can improve the ball shape uniformity and the bonding ball shape of a ball which is formed on the tip of a wire and provide excellent reliability, loop linearity, and binding strength.

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21-03-2016 дата публикации

SILVER ALLOY BONDING WIRE AND MANUFACTURING METHOD THEREOF

Номер: KR1020160030777A
Принадлежит:

A silver alloy bonding wire according to the technological idea of the present invention is a silver alloy bonding wire which includes silver (Ag) as a main component, palladium (Pd), and gold (Au). According to the silver alloy bonding wire, a ratio of a grain, whose aspect ratio is equal to or higher than three, at the center is 10-40%. The method for manufacturing the silver alloy bonding wire according to the technological idea of the present invention includes: a step of manufacturing an alloy piece including the silver (Ag) as a main component, the palladium (Pd), and the gold (Au); and a step of manufacturing an alloy piece including the silver (Ag) as the main component and including the palladium (Pd) and the gold (Au); and a step of performing fresh and thermal treatment of the alloy piece. The step of performing fresh and thermal treatment of the alloy piece includes a step of performing thermal treatment before a cross section reduction ratio of a fine line obtained by performing ...

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28-08-2014 дата публикации

SILVER ALLOY BONDING WIRE

Номер: WO2014129745A1
Принадлежит:

The present invention relates to a silver alloy bonding wire having silver as the main component. More specifically, provided is a silver alloy bonding wire containing palladium (Pd) of 1-4 wt%, wherein the ratio of a mean grain size (a) of the outer portion to a mean grain size (b) of the center portion with respect to a cross section in the longitudinal direction of the bonding wire is in the range of 0.3-3. When utilizing the bonding wire of the present invention, bonding having excellent high ball formability and SOB bonding property can be obtained inexpensively.

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10-07-2014 дата публикации

SILVER ALLOY BONDING WIRE

Номер: WO2014107040A1
Принадлежит:

The present invention relates to a silver(Ag)alloy bonding wire, and more particularly, to a silver alloy bonding wire with silver as the main ingredient, which includes 0.5 to 4 % by weight of palladium (Pd) and 2 to 8 % by weight of gold (Au), characterized in that, when the bonding wire is cut perpendicularly to the direction of the length, the ratio (a/b) of the average particle size (a) of the outer part of the cross section to that (b) of the central part thereof is 0.3 to 3. The bonding wire according to the present invention has the properties of high resistance to a thermal impulse, excellent SOB bonding, and excellent bonding in an atmosphere of nitrogen.

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02-11-2016 дата публикации

CORE FOR REVERSE REFLOW, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE

Номер: KR1020160126839A
Принадлежит:

The present invention relates to a core for reverse reflow, a semiconductor package, and a method of manufacturing the semiconductor package. More specifically, the present invention provides a semiconductor device having a bump pad; and a semiconductor package having a bump portion coupled with the bump pad. In the meantime, the bump portion includes: a core; a first metal layer which is applied on the core to coat the core; a second metal layer which is applied on the first metal layer to coat the first metal layer; and a solder layer which is applied on the second metal layer to coat the second metal layer. A thickness of the solder layer can be decreased more and more when it gets farther from the bump pad. By using the core for reverse reflow, the semiconductor package, and the method of manufacturing the semiconductor package according to the present invention, it is possible to manufacture the semiconductor package with a high bonding strength at high accuracy. COPYRIGHT KIPO 2016 ...

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07-01-2016 дата публикации

SOLDER BALL AND SEMICONDUCTOR DEVICE USING SAME

Номер: KR1020160002206A
Принадлежит:

The present invention relates to a solder ball and a semiconductor device using the same. More particularly, the present invention relates to a solder ball on which a first plating layer and a second plating layer are sequentially formed. The second plating layer includes Sn-Ag-Cu. There may be nanoparticles as Ag_3Sn or Ag-Sn composites in the second plating layer. The solder ball has superior sphericity and stand-off characteristics, so connection reliability is excellent. Therefore, a semiconductor device with a high degree of integration can be realized. COPYRIGHT KIPO 2016 ...

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