15-02-2018 дата публикации
Номер: US20180047692A1
Принадлежит:
Provided is a disclosure for optimizing the number of semiconductor devices on a wafer/substrate. The optimization comprises laying out, cutting, and packaging the devices efficiently. 1. A substrate comprising interconnects , wherein the interconnects comprise edge interconnects along edges of the substrate , and at least one of the edges is a rounded non-linear edge.2. The substrate of claim 1 , wherein the interconnects comprise a plurality of non-circular interconnects with a major axis and a minor axis.3. The substrate of claim 2 , wherein the major axis of at least one of the plurality of non-circular interconnects is substantially perpendicular to: a radial axis of the substrate claim 2 , or to a line that is parallel to a radial axis of the substrate.4. The substrate of claim 1 , wherein the edge interconnects are configured to form interconnects that hang over a corresponding edge when solder of the substrate is reflowed.5. The substrate of claim 1 , wherein a perimeter of the substrate tracks a contour of individual ones of the edge interconnects.6. The substrate of claim 1 , comprising:a first row of horizontally aligned first interconnects; anda second row of second interconnects that are immediately below the first row of first interconnects, the first row is parallel to the second row,', 'the first interconnects have a first pitch,', 'the second interconnects have the first pitch,', 'a first line through a center of each of the first interconnects is parallel to a second line through a center of each of the second interconnects, and', 'the first pitch is different than a vertical distance from the first line to the second line., 'wherein7. A substrate comprising interconnects claim 1 , wherein:a plurality of the interconnects are non-circular interconnects, and each non-circular interconnect has a major axis and a minor axis,a first substrate axis extends from a center of the substrate to a perimeter of the substrate; anda first row of the ...
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