A BONDING JUNCTION STRUCTURE

Bonding junction structure

Provided is a bonding joining structure in which a heat generating body and a support including a metal are joined to each other via a joint portion composed of a sintered body of copper powder. The support contains copper or gold, the copper or gold being present in at least an outermost surface of the support. An interdiffusion portion in which copper or gold contained in the support and copper contained in the sintered body is formed so as to straddle a bonding interface between the support and the sintered body. Preferably, a copper crystal structure having the same crystal orientation is formed in the interdiffusion portion so as to straddle the bonding interface.

BONDING JUNCTION STRUCTURE

Provided is a bonding joining structure in which a heat generating body and a support including a metal are joined to each other via a joint portion composed of a sintered body of copper powder. The support contains copper or gold, the copper or gold being present in at least an outermost surface of the support. An interdiffusion portion in which copper or gold contained in the support and copper contained in the sintered body is formed so as to straddle a bonding interface between the support and the sintered body. Preferably, a copper crystal structure having the same crystal orientation is formed in the interdiffusion portion so as to straddle the bonding interface.

Bonding junction structure

本發明係一種經由包含銅粉(31)之燒結體(32)之接合部位(30)將發熱體與金屬之支持體(20)接合而成的黏晶接合構造。支持體(20)至少於其最表面存在銅或金。以跨及支持體(20)與燒結體(32)之接合界面(40)之方式形成有支持體(20)之銅或金與燒結體(32)之銅的相互擴散部位(41)。適宜為於相互擴散部位(41)以跨及接合界面(40)之方式形成有結晶方位為相同方向之銅之結晶構造。

Method for Producing a Metal Layer on a Substrate and Device

A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation.

Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for a semiconductor chip arrangement, and a method for soldering a semiconductor chip arrangement

A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

Anisotropic conductive film including conductive adhesive layer and semiconductor device connected by the same

An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×10 5 /d 2 to 10.0×10 5 /d 2 (particles) per square millimeter (mm 2 ) (where d is a diameter of the conductive particles in μm).

Computing system with a thermal interface comprising magnetic particles

Embodiments of the present disclosure provide techniques and configurations for a computing system with a thermal interface having magnetic particles. In some embodiments, the computing system may include a first part, a second part, and a thermal interface to couple the first and second parts. The thermal interface may comprise a thermal interface material having magnetic particles that are aligned in a defined direction relative to a surface of the first or second part, to provide desired thermal conductivity between the first and second parts. The defined direction of alignment of magnetic particles may comprise an alignment of the particles substantially perpendicularly to the surface of the first or second part. Other embodiments may be described and/or claimed.

도전 재료, 접속 구조체 및 접속 구조체의 제조 방법

도전 재료가 일정 기간 방치된 경우에도, 전극 상에 도전성 입자에 있어서의 땜납을 효율적으로 배치할 수 있고, 또한 가열 시에 도전 재료의 황변을 충분히 억제할 수 있는 도전 재료를 제공한다. 본 발명에 따른 도전 재료는, 도전부의 외표면 부분에 땜납을 갖는 복수의 도전성 입자와, 경화성 화합물과, 3불화붕소 착체를 포함한다.

Method for producing semiconductor chips and method for producing a via in a semiconductor substrate

Verfahren zum Herstellen von Halbleiterchips, wobei das Verfahren umfasst: Bereitstellen eines Halbleiter-Wafers; Ausbilden einer Metallschicht auf dem Halbleiter-Wafer durch Plasmaabscheidung von bereits hergestellten Metallpartikeln auf dem Halbleiter-Wafer, wobei die Metallpartikel aus Kupfer und/oder Aluminium hergestellte Kerne und die Kerne umgebende Schalen umfassen, wobei die Schalen aus Silber, Gold, Palladium, Titan, Tantal und/oder Niob hergestellt sind; und Zersägen des Halbleiter-Wafers, wodurch die Halbleiterchips getrennt werden. A method of manufacturing semiconductor chips, the method comprising: Providing a semiconductor wafer; Forming a metal layer on the semiconductor wafer by plasma deposition of already produced metal particles on the semiconductor wafer, the metal particles comprising cores made of copper and / or aluminum and shells surrounding the cores, the shells of silver, gold, palladium, titanium, Tantalum and / or niobium are made; and Sawing the semiconductor wafer, thereby separating the semiconductor chips.

Conductive material, connection structure body, and connection structure body production method

本發明提供一種導電材料，其即便於將導電材料放置一定期間之情形時，亦可於電極上有效率地配置導電性粒子中之焊料，進而，可充分地抑制加熱時導電材料之黃變。 本發明之導電材料包含：於導電部之外表面部分具有焊料之複數個導電性粒子、硬化性化合物及三氟化硼錯合物。

Comprise anisotropic conductive film and the semiconductor device of conductive adhesive layer

本文公开了各向异性导电膜，其包括含有导电颗粒和绝缘颗粒的导电粘合剂层，以及不含导电颗粒的绝缘粘合剂层。在该各向异性导电膜中，上述导电粘合剂层的导电颗粒和绝缘颗粒具有7.0×10 5 /d 2 至10.0×10 5 /d 2 （颗粒）每平方毫米（mm 2 ）的总颗粒密度（其中，d是以μm表示的该导电颗粒直径）。本文还公开了由所述各向异性导电膜连接的半导体装置。

Conductive particles, conducting material, and connection structure

Provided are conductive particles capable of lowering the connection resistance when electrodes are electrically connected therebetween. Each conductive particle (1) is provided with a base particle (2), and a conducting portion (3) disposed on the surface of the base particle (2), the conducting portion (3) having a plurality of protrusions (3a) on the external surface, the conducting portion (3) having a crystal structure, and the crystal structure being continuous between a portion where the protrusion (3a) is present and a portion where the protrusion (3a) is not present in the conducting portion (3).

Method for producing a metal layer on a substrate and device

本发明涉及用于在基板上制造金属层的方法和器件。具体地，本发明提供了一种在半导体基板上制造金属层的方法。通过沉积金属颗粒在半导体基板上制造金属层。该金属颗粒包括由第一金属材料制成的核和包围该核的壳。该壳由抗氧化的第二金属材料制成。本发明还涉及一种用于制造半导体基板中的通孔的方法以及制造半导体芯片的方法。本发明还涉及一种半导体器件，其包括包含第一电极的半导体芯片；和施加于该半导体芯片的第一电极的金属颗粒。

Anisotropic conductive film including conductive adhesive layer and semiconductor device connected by the same

An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×10 5 /d 2 to 10.0×10 5 /d 2 (particles) per square millimeter (mm 2 ) (where d is a diameter of the conductive particles in μm).

Conductive particle, conductive material and connecting structure

본 발명은 전극 간을 접속한 경우에, 접속 저항을 낮게 할 수 있는 도전성 입자, 및 상기 도전성 입자를 사용한 도전 재료를 제공한다. 본 발명에 따른 도전성 입자(1)는, 기재 입자(2)와, 기재 입자(2)의 표면 상의 일부의 영역에 배치된 도전재(4)를 구비하고, 도전재(4)의 재질이 니켈보다도 모스 경도가 높은 재질이다. The present invention provides conductive particles capable of lowering the connection resistance when connecting between electrodes, and conductive materials using the conductive particles. The electroconductive particle 1 which concerns on this invention is equipped with the base material particle 2 and the electroconductive material 4 arrange | positioned in a partial area | region on the surface of the base material particle 2, and the material of the electroconductive material 4 is nickel It is a material with a higher Mohs hardness.

Display panel and display panel test system

표시패널은 실장된 집적회로의 접착품질을 평가하기 위해서 접착부분의 접속저항을 측정한다. 표시패널은 접속저항을 측정하기 위한 측정패드들을 포함한다. 접속저항이 측정되기 위한 부분이 n개라고 하면, 필요한 측정패드들의 개수는 2n개 일 수 있다. 상기 2n개의 측정패드들에 인가되는 신호들은 고정적이지 않고, 측정하고자 하는 부분의 위치의 변화에 대응하여 변할 수 있다. The display panel measures the connection resistance of the adhesive part in order to evaluate the adhesive quality of the integrated circuit mounted thereon. The display panel includes measurement pads for measuring connection resistance. If the number of portions for measuring the connection resistance is n, the required number of measurement pads may be 2n. Signals applied to the 2n measurement pads are not fixed, but may change in response to a change in a position of a portion to be measured.

Display apparatus and method of manufacturing the same

本申请涉及显示设备和制造显示设备的方法。显示设备包括：衬底，包括显示区域和焊盘区域；多个焊盘电极，在衬底上设置在焊盘区域中；电路板，设置成在衬底上与焊盘区域的至少一部分重叠；以及各向异性导电层，设置在衬底和电路板之间的焊盘区域中。电路板包括基础衬底和设置在基础衬底的下表面上的多个凸起电极。各向异性导电层包括粘合层和布置在粘合层中的多个导电颗粒。导电颗粒中的每一个包括芯、以使得芯的至少一部分暴露的方式设置在芯上的第一导电膜、以及完全覆盖芯和第一导电膜的第二导电膜。

Conductive adhesive composition

Curable composition for electronic component, connection structure, and method for producing connection structure

Provided is a curable composition that is for an electronic component, can be rapidly cured, and furthermore can have increased conductivity even when connected to a copper electrode. The curable composition for an electronic component is used when connecting to a copper electrode. The curable composition for an electronic component contains a heat-curable compound, a latent curing agent, and an imidazole compound having an aromatic skeleton.

Conductive material, connection structure, and method for producing connection structure

【課題】導電材料が一定期間放置された場合でも、電極上に導電性粒子におけるはんだを効率的に配置することができ、さらに、加熱時に導電材料の黄変を十分に抑制することができる導電材料を提供する。【解決手段】本発明に係る導電材料は、導電部の外表面部分にはんだを有する複数の導電性粒子と、硬化性化合物と、三フッ化ホウ素錯体とを含む。【選択図】図１

conductive adhesive composition

本发明的课题在于提供一种含有热塑性树脂且具备高散热性的导电性粘接剂组合物，其抑制了在芯片接合后非极性溶剂渗出的渗出现象。本发明涉及一种导电性粘接剂组合物，其包含(A)导电性粒子、(B)热塑性树脂、(C)非极性溶剂、以及(D)非水溶性的氟系表面活性剂。

Connection device, method for manufacturing connection structure, method for manufacturing stacked chip component and method for mounting electronic component

The purpose of the present invention is to prevent cracking of an electronic component. A connection device is provided with: a mounting section (5) on which an electronic component (2), (12) stacked with a thermosetting adhesive agent layer (6) is mounted; a heat press head (7) for heating and pressing the electronic component (2), (12); a first elastic body (8) that is disposed between the electronic component (2), (12) and a pressing surface (7a) of the heat press head (7) so as to press an upper surface of the electronic component (2), (12); and a support member (9) that is disposed on the periphery of the electronic component (2), (12) and supports the first elastic body.

Metal sintering film composition

任选地使用固体或半固体有机粘合剂制备包含一种或多种金属、一种或多种金属合金、或一种或多种金属和一种或多种金属合金的混合物的烧结膜。该有机粘合剂可以具有助熔官能团；该有机粘合剂可以为在组合物中的金属或金属合金烧结时会部分或完全分解的有机粘合剂。在一个实施方式中，该烧结膜被提供于最终用途基材上，例如硅芯片或晶圆、或金属电路板或箔，或该烧结膜被提供于载体上，例如金属网。制备是通过以下完成的：在有或没有粘合剂情况下，在合适的溶剂中分散金属或金属合金，并且将该组合物暴露于高温下以蒸发掉该溶剂以及部分地烧结该金属或金属合金。

Curable anisotropic conductive material for electronic parts, connection structure, and method of manufacturing connection structure

Anisotropic conductive film including conductive adhesive layer and semiconductor device

烧结材料、连接结构体、复合粒子、接合用组合物以及烧结材料的制造方法

本发明提供一种热应力和接合强度均优异的烧结材料、具有该烧结材料的连接结构体、能够制造烧结材料的接合用组合物以及烧结材料的制造方法。本发明提供一种烧结材料，其具有基部(1)、缓冲部(2)以及填充部(3)。缓冲部(2)以及填充部(3)分散存在于基部(1)中。基部(1)是金属的烧结体，缓冲部(2)由空孔以及不同于所述烧结体的材料中的至少一种形成，填充部(3)由粒子以及纤维中的至少一种形成。将烧结材料的三维图像中所述缓冲部的体积分布的峰度设为A，将除去填充部后的所述烧结材料的三维图像中缓冲部的体积分布的峰度设为B时，满足A>B。

導電材料、接続構造体及び接続構造体の製造方法

Thermally and electrically conductive adhesive composition

The present invention relates to a thermally and electrically conductive adhesive composition, which includes (A) an electrically conductive filler, (B) an epoxy resin, (C) a reactive diluent, and (D) a curing agent, wherein the component (A) is a silver powder having an average particle diameter of 1 to 10 μm, the component (B) has two or more epoxy functional groups and aromatic rings in each molecule, the component (C) is a compound having two or more glycidyl ether functional groups in an aliphatic hydrocarbon chain and also having a molecular weight of 150 to 600, and the component (D) is a compound having two or more phenol functional groups in each molecule, a compound having two or more aniline functional groups in each molecule, or a mixture of these compounds, and the content of each of the component (A), (B), (C), and (D) is within a specific range.

预制结构及其形成方法、和焊接半导体芯片布置的方法

本发明涉及预制结构及其形成方法、和焊接半导体芯片布置的方法。用于焊接半导体芯片布置的预制结构包括碳纤维复合片以及在碳纤维复合片之上形成的焊料层。

Computing system with a thermal interface comprising magnetic particles

Embodiments of the present disclosure provide techniques and configurations for a computing system with a thermal interface having magnetic particles. In some embodiments, the computing system may include a first part, a second part, and a thermal interface to couple the first and second parts. The thermal interface may comprise a thermal interface material having magnetic particles that are aligned in a defined direction relative to a surface of the first or second part, to provide desired thermal conductivity between the first and second parts. The defined direction of alignment of magnetic particles may comprise an alignment of the particles substantially perpendicularly to the surface of the first or second part. Other embodiments may be described and/or claimed.

Sintered material, connection structure, composite particle, joining composition, and method for manufacturing sintered material

A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

본딩 접합 구조

발열체와 금속의 지지체(20)를, 구리 분말(31)의 소결체(32)로 이루어지는 접합 부위(30)를 통하여 접합한 본딩 접합 구조이다. 지지체(20)는 적어도 그 최표면에 구리 또는 금이 존재하고 있다. 지지체(20)와 소결체(32)의 접합 계면(40)에 걸치도록, 지지체(20)의 구리 또는 금과 소결체(32)의 구리와의 상호 확산 부위(41)가 형성되어 있다. 상호 확산 부위(41)에 결정 방위가 같은 방향인 구리의 결정 구조가 접합 계면(40)에 걸치도록 형성되어 있는 것이 바람직하다.

烧结材料、连接结构体、复合粒子、接合用组合物以及烧结材料的制造方法

本发明提供一种热应力和接合强度均优异的烧结材料、具有该烧结材料的连接结构体、能够制造烧结材料的接合用组合物以及烧结材料的制造方法。本发明提供一种烧结材料，其具有基部(1)、缓冲部(2)以及填充部(3)。缓冲部(2)以及填充部(3)分散存在于基部(1)中。基部(1)是金属的烧结体，缓冲部(2)由空孔以及不同于所述烧结体的材料中的至少一种形成，填充部(3)由粒子以及纤维中的至少一种形成。将烧结材料的三维图像中所述缓冲部的体积分布的峰度设为A，将除去填充部后的所述烧结材料的三维图像中缓冲部的体积分布的峰度设为B时，满足A>B。

熱伝導性導電性接着剤組成物

【課題】ダイボンド材として用いられ、高い熱伝導性と安定した導電性を有する熱伝導性導電性接着剤組成物を提供する。【解決手段】（Ａ）導電性フィラー、（Ｂ）エポキシ樹脂、（Ｃ）反応性希釈剤および（Ｄ）硬化剤を含み、（Ａ）は１〜１０μｍの平均粒子径を有する銀粉であり、組成物の全体量に対して８５〜９４質量％の範囲であり、（Ｂ）は例えばビスフェノールＦ型エポキシ樹脂であり、組成物の全体量に対して１〜８質量％の範囲であり、（Ｃ）は例えば１，４−ブタンジオールジグリシジルエーテルであり、組成物の全体量に対して０．２〜５質量％の範囲であり、（Ｄ）は例えば４，４’−ジアミノジフェニルスルホンであり、組成物の全体量に対して０．２〜３質量％の範囲である熱伝導性導電性接着剤組成物。【選択図】なし

소결 재료, 접속 구조체, 복합 입자, 접합용 조성물 및 소결 재료의 제조 방법

열응력 및 접합 강도의 양방이 우수한 소결 재료, 이 소결 재료를 구비하는 접속 구조체, 소결 재료를 제조할 수 있는 접합용 조성물 및 소결 재료의 제조 방법을 제공한다. 소결 재료에 있어서, 기부 (1) 와, 완충부 (2) 와, 충전부 (3) 를 구비한다. 완충부 (2) 및 충전부 (3) 는, 기부 (1) 중에 분산되어 존재하고 있다. 기부 (1) 는, 금속의 소결체이고, 완충부 (2) 는 공공 및 상기 소결체와 동일하지 않은 재료 중 적어도 어느 일방에 의해 형성되고, 충전부 (3) 는 입자 및 섬유 중 적어도 어느 일방에 의해 형성된다. 소결 재료의 삼차원 화상에 있어서의 상기 완충부의 체적 분포의 첨도를 A, 충전부를 제거한 상기 소결 재료의 삼차원 화상에 있어서의 완충부의 체적 분포의 첨도를 B 로 했을 때, A > B 를 만족시킨다.

焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法

熱応力及び接合強度の両方に優れる焼結材料、この焼結材料を備える接続構造体、焼結材料を製造することができる接合用組成物及び焼結材料の製造方法を提供する。焼結材料において、基部１と、緩衝部２と、充填部３とを備える。緩衝部２及び充填部３は、基部１中に分散して存在している。基部１は、金属の焼結体であり、緩衝部２は空孔及び前記焼結体と同一でない材料の少なくともいずれか一方により形成され、充填部３は粒子及び繊維の少なくともいずれか一方により形成される。焼結材料の三次元画像における前記緩衝部の体積分布の尖度をＡ、充填部を除去した前記焼結材料の三次元画像における緩衝部の体積分布の尖度Ｂとしたときに、Ａ＞Ｂを満たす。

燒結材料、連接結構體、複合粒子、接合用組成物及燒結材料之製造方法

本發明提供一種熱應力及接合強度之兩者優異之燒結材料、具備該燒結材料之連接結構體、可製造燒結材料之接合用組成物及燒結材料之製造方法。 本發明之燒結材料具備基部1、緩衝部2及填充部3。緩衝部2及填充部3分散存在於基部1中。基部1係金屬之燒結體，緩衝部2由孔隙及不同於上述燒結體之材料中至少任一者形成，填充部3由粒子及纖維中至少任一者形成。於將燒結材料之三維影像中之上述基部之體積分佈之峰度設為A，且將經去除填充部之上述燒結材料之三維影像中之基部之體積分佈之峰度設為B時，滿足A>B。

소결 재료, 접속 구조체, 복합 입자, 접합용 조성물 및 소결 재료의 제조 방법

열응력 및 접합 강도의 양방이 우수한 소결 재료, 이 소결 재료를 구비하는 접속 구조체, 소결 재료를 제조할 수 있는 접합용 조성물 및 소결 재료의 제조 방법을 제공한다. 소결 재료에 있어서, 기부 (1) 와, 완충부 (2) 와, 충전부 (3) 를 구비한다. 완충부 (2) 및 충전부 (3) 는, 기부 (1) 중에 분산되어 존재하고 있다. 기부 (1) 는, 금속의 소결체이고, 완충부 (2) 는 공공 및 상기 소결체와 동일하지 않은 재료 중 적어도 어느 일방에 의해 형성되고, 충전부 (3) 는 입자 및 섬유 중 적어도 어느 일방에 의해 형성된다. 소결 재료의 삼차원 화상에 있어서의 상기 완충부의 체적 분포의 첨도를 A, 충전부를 제거한 상기 소결 재료의 삼차원 화상에 있어서의 완충부의 체적 분포의 첨도를 B 로 했을 때, A > B 를 만족시킨다.

焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法

【課題】熱応力及び接合強度の両方に優れる焼結材料、この焼結材料を備える接続構造体、焼結材料を製造することができる接合用組成物及び焼結材料の製造方法を提供する。【解決手段】焼結材料において、基部１と、緩衝部２と、充填部３とを備える。緩衝部２及び充填部３は、基部１中に分散して存在している。基部１は、金属の焼結体であり、緩衝部２は空孔及び前記焼結体と同一でない材料の少なくともいずれか一方により形成され、充填部３は粒子及び繊維の少なくともいずれか一方により形成される。焼結材料の三次元画像における前記緩衝部の体積分布の尖度をＡ、充填部を除去した前記焼結材料の三次元画像における緩衝部の体積分布の尖度Ｂとしたときに、Ａ＞Ｂを満たす。【選択図】図１

焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法

ボンディング接合構造

発熱体と金属の支持体（２０）とを、銅粉（３１）の焼結体（３２）からなる接合部位（３０）を介して接合したボンディング接合構造である。支持体（２０）は、少なくともその最表面に銅又は金が存在している。支持体（２０）と焼結体（３２）との接合界面（４０）を跨ぐように、支持体（２０）の銅又は金と焼結体（３２）の銅との相互拡散部位（４１）が形成されている。相互拡散部位（４１）に、結晶方位が同方向である銅の結晶構造が、接合界面（４０）を跨ぐように形成されていることが好適である。

Computersystem mit einer magnetische Partikel umfassenden thermischen Schnittstelle

Ausführungsformen der vorliegenden Offenbarung stellen Verfahren und Konfigurationen für ein Computersystem mit einer thermischen Schnittstelle bereit, die magnetische Partikel aufweist. In manchen Ausführungsformen kann das Computersystem einen ersten Teil, einen zweiten Teil und eine thermische Schnittstelle umfassen, um den ersten und den zweiten Teil zu verbinden. Die thermische Schnittstelle kann ein thermisches Schnittstellenmaterial mit magnetischen Partikeln umfassen, die in Bezug auf eine Oberfläche des ersten oder des zweiten Teils in eine definierte Richtung ausgerichtet sind, um eine gewünschte thermische Leitfähigkeit zwischen dem ersten und dem zweiten Teil bereitzustellen. Die definierte Ausrichtungsrichtung der magnetischen Partikel kann eine Ausrichtung der Partikel im Wesentlichen im rechten Winkel auf die Oberfläche des ersten oder des zweiten Teils umfassen. Weitere Ausführungsformen können beschrieben und/oder beansprucht werden.

金屬燒結膜組合物

本發明係關於視需要使用固體或半固體有機黏合劑製備包含一種或多種金屬、一種或多種金屬合金、或一種或多種金屬與一種或多種金屬合金之摻合物之燒結膜。該有機黏合劑可具有助熔官能基；該有機黏合劑可為在組合物中的金屬或金屬合金燒結時部分或完全分解的物質。在一實施例中，該燒結膜提供於最終用途基板(例如矽晶粒或矽晶圓、或金屬電路板或金屬箔)上，或該燒結膜提供於載體(例如金屬網)上。該製法係藉由在適宜的溶劑中分散金屬或金屬合金(具有或不具黏合劑)，並將組合物曝露於高溫下以蒸發掉該溶劑及部分燒結該金屬或金屬合金而完成。

금속 소결 필름 조성물

임의로 고체 또는 반-고체 유기 결합제를 사용하여 하나 이상의 금속, 하나 이상의 금속 합금, 또는 하나 이상의 금속 및 하나 이상의 금속 합금의 블렌드를 포함하는 소결 필름을 제조한다. 유기 결합제는 플럭싱 작용성을 가질 수 있고; 유기 결합제는 조성물 중의 금속 또는 금속 합금의 소결 시에 부분적으로 또는 완전히 분해되는 것일 수 있다. 한 실시양태에서, 규소 다이 또는 웨이퍼, 또는 금속 회로 기판 또는 호일과 같은 최종 사용 기판 상에 소결 필름이 제공되거나, 또는 금속 메쉬와 같은 캐리어 상에 소결 필름이 제공된다. 금속 또는 금속 합금을 결합제와 함께 또는 결합제 없이 적절한 용매에 분산시키고, 조성물을 고온에 노출시켜 용매를 증발 제거하고, 금속 또는 금속 합금을 부분적으로 소결함으로써 제조가 달성된다.

Connection method, manufacturing method of connection structure, manufacturing method of wafer stacking part, and method of assembling electronic component

连接装置、连接构造体的制造方法、芯片堆叠部件的制造方法及电子部件的安装方法

防止电子部件的破裂。具有：载放部（5），载放与热固化性的粘接剂层（6）层叠的电子部件（2、12）；加热按压头（7），对电子部件（2、12）进行加热按压；第1弹性体（8），配置于电子部件（2、12）与加热按压头（7）的按压面（7a）之间，对电子部件（2、12）的上表面进行按压；以及支撑构件（9），配置于电子部件（2、12）的周围，并且支撑第1弹性体。

接続装置、接続構造体の製造方法、チップスタック部品の製造方法及び電子部品の実装方法

　電子部品の割れを防止する。熱硬化性の接着剤層（６）と積層された電子部品（２），（１２）が載置される載置部（５）と、電子部品（２），（１２）を加熱押圧する加熱押圧ヘッド（７）と、電子部品（２），（１２）と加熱押圧ヘッド（７）の押圧面（７ａ）との間に配置され、電子部品（２），（１２）の上面を押圧する第１の弾性体（８）と、電子部品（２），（１２）の周囲に配置されるとともに、第１の弾性体を支持する支持部材（９）とを有する。

显示设备及制造其的方法

本申请涉及显示设备和制造显示设备的方法。显示设备包括：衬底，包括显示区域和焊盘区域；多个焊盘电极，在衬底上设置在焊盘区域中；电路板，设置成在衬底上与焊盘区域的至少一部分重叠；以及各向异性导电层，设置在衬底和电路板之间的焊盘区域中。电路板包括基础衬底和设置在基础衬底的下表面上的多个凸起电极。各向异性导电层包括粘合层和布置在粘合层中的多个导电颗粒。导电颗粒中的每一个包括芯、以使得芯的至少一部分暴露的方式设置在芯上的第一导电膜、以及完全覆盖芯和第一导电膜的第二导电膜。

烧结材料、连接结构体、复合粒子、接合用组合物以及烧结材料的制造方法

本发明提供一种热应力和接合强度均优异的烧结材料、具有该烧结材料的连接结构体、能够制造烧结材料的接合用组合物以及烧结材料的制造方法。本发明提供一种烧结材料，其具有基部(1)、缓冲部(2)以及填充部(3)。缓冲部(2)以及填充部(3)分散存在于基部(1)中。基部(1)是金属的烧结体，缓冲部(2)由空孔以及不同于所述烧结体的材料中的至少一种形成，填充部(3)由粒子以及纤维中的至少一种形成。将烧结材料的三维图像中所述缓冲部的体积分布的峰度设为A，将除去填充部后的所述烧结材料的三维图像中缓冲部的体积分布的峰度设为B时，满足A>B。

烧结材料、连接结构体、复合粒子、接合用组合物以及烧结材料的制造方法

本发明提供一种热应力和接合强度均优异的烧结材料、具有该烧结材料的连接结构体、能够制造烧结材料的接合用组合物以及烧结材料的制造方法。本发明提供一种烧结材料，其具有基部(1)、缓冲部(2)以及填充部(3)。缓冲部(2)以及填充部(3)分散存在于基部(1)中。基部(1)是金属的烧结体，缓冲部(2)由空孔以及不同于所述烧结体的材料中的至少一种形成，填充部(3)由粒子以及纤维中的至少一种形成。将烧结材料的三维图像中所述缓冲部的体积分布的峰度设为A，将除去填充部后的所述烧结材料的三维图像中缓冲部的体积分布的峰度设为B时，满足A>B。

导电性粒子、导电材料及连接结构体

本发明提供一种在对电极间进行了连接的情况下可以使连接电阻降低的导电性粒子、以及使用了该导电性粒子的导电材料。本发明的导电性粒子1具备基体材料粒子2、以及在基体材料粒子2的表面上的一部分区域配置的导电材料4，且导电材料4的材质为莫氏硬度高于镍的材质。

导电材料、连接结构体以及连接结构体的制造方法

本发明提供一种导电材料，即使在将该导电材料放置了一定时间的情况下，也可在电极上有效地配置导电性粒子中的焊料，并且可充分地抑制加热时导电材料的变黄。本发明的导电材料包含：在导电部的外表面部分具有焊料的多个导电性粒子、固化性化合物以及三氟化硼配位化合物。

Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for a semiconductor chip arrangement, and a method for soldering a semiconductor chip arrangement

A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

导电性粘接剂组合物

本发明的课题在于提供一种含有热塑性树脂且具备高散热性的导电性粘接剂组合物，其抑制了在芯片接合后非极性溶剂渗出的渗出现象。本发明涉及一种导电性粘接剂组合物，其包含(A)导电性粒子、(B)热塑性树脂、(C)非极性溶剂、以及(D)非水溶性的氟系表面活性剂。