Nanostructure barrier for copper wire bonding

A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.

BONDING WIRE FOR SEMICONDUCTOR DEVICE

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %. 1. A bonding wire for a semiconductor device comprising:a core material having Cu as a main component and containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1% by mass or more and 3.0% by mass or less;a coating layer having Pd as a main component provided on a surface of the core material; anda skin alloy layer containing Au and Pd provided on a surface of the coating layer,wherein a concentration of Cu at an outermost surface of the wire is 1 at % or more and 10 at % or less, and the metallic element of Group 10 of the Periodic Table of Elements comprises Ni.2. The bonding wire for a semiconductor device according to claim 1 , wherein the metallic element of Group 10 of the Periodic Table of Elements further comprises either or both of Pd and Pt.3. (canceled)4. The bonding wire for a semiconductor device according to claim 1 , whereinthe coating layer having Pd as a main component has a thickness of 20 nm or more and 90 nm or less, andthe skin alloy layer containing Au and Pd has a thickness of 0.5 nm or more and to 40 nm or less and has a maximum concentration of Au of 15 at % or more and 75 at % or less.5. The bonding wire for a semiconductor device according to claim 1 , whereinthe core material further contains Au, andthe total amount of Ni, Pd, Pt and Au in the core ...

Coated metal wires for internal connection of semiconductor devices

Bonding wire for semiconductor device

Provided is a bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, wherein second bonding performance is further improved in a Pd-plated lead frame, and excellent ball bonding performance can be achieved even under high humidity and heat conditions.　In the bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, the concentration of Cu on the outermost surface of the wire is set at 1–10 at%, and the core contains 0.1–3.0 mass%, in total, of Pd and/or Pt, thus improving second bonding performance and enabling excellent ball bonding performance to be achieved under high humidity and heat conditions. In addition, the maximum concentration of Au in the cover alloy layer is preferably 15–75 at%.

Semiconductor package capable of absorbing electromagnetic wave

A semiconductor package has a semiconductor chip electrically connected to a conductive lead of a lead frame through a bonding wire and it is encapsulated by an insulating molding body. In such a semiconductor package, an electromagnetic wave absorbing film is formed by coating an electromagnetic wave absorbent on predetermined portions or either of the bonding wire and the conductive lead to a predetermined constant thickness, and the electromagnetic wave absorbing film forms a closed loop. In this manner, the electromagnetic interference between the conductive lead and the bonding wire can be surely attenuated. The lead frame and the conductive lead can be shield from the electromagnetic wave applied from the outside of the semiconductor package. In addition, the spurious signal flowing through the conductive lead and the bonding wire can also be reduced.

How to assemble coated and fine metal wires and semiconductor devices using them

본 발명의 목적은, 반도체장치 내에서 접속와이어로 사용되는 피복미세금속와이어 및 이를 이용하는 반도체장치의 조립방법을 제공하는데 있다. 방전공정에 의해 피복미세금속와이어의 절연층을 제거하는 종래 방법에 따라서는, 미세금속와이어를 손상하지 않고 높은 안정성을 보장하면서 절연층을 제거하기가 곤란하다. 본 발명에 따른 피복미세금속와이어의 절연층은 안료 혹은 염료를 함유하며 고효율로 레이저광을 흡수한다. 제거될 절연층의 일부분을 적절한 조사 파장을 가진 레이저광에 의해 조사하는 것에 의해, 미세금속와이어를 손상하는 일없이 절연층을 완전하게 제거할 수 있다. An object of the present invention is to provide a coated fine metal wire used as a connecting wire in a semiconductor device and a method of assembling a semiconductor device using the same. According to the conventional method of removing the insulating layer of the coated fine metal wire by the discharge process, it is difficult to remove the insulating layer while ensuring high stability without damaging the fine metal wire. The insulating layer of the coated fine metal wire according to the present invention contains a pigment or dye and absorbs laser light with high efficiency. By irradiating a portion of the insulating layer to be removed with a laser beam having an appropriate irradiation wavelength, the insulating layer can be completely removed without damaging the fine metal wire.

Coated thin metal wire and method for making semiconductor device using same

本发明的目的是提供用作半导体器件中的键合线的涂层细金属线及使用这种涂层细金属线的半导体器件。根据借助于放射处理去掉涂层细金属线的绝缘层的常规方法,在不损伤细金属线和保证高稳定性的情况下很难去掉绝缘层。根据本发明的涂层细金属线的绝缘层含有颜料或染料并以高效率地吸收激光。通过用具有合适发射波长的激光照射绝缘的一部分,以去掉该部分,绝缘层可以在不损伤细金属线的情况下被完全去掉。

Nanostructure barrier for copper wire bonding

A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.

Nanostructure barrier for copper wire bonding

A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.

用于铜引线接合的纳米结构阻挡层

本发明的名称为用于铜引线接合的纳米结构阻挡层。用于铜引线接合的纳米结构阻挡层(110)包括金属晶粒(114)和在金属晶粒(114)之间的晶粒间金属(116)。纳米结构阻挡层(110)包括选自镍或钴的第一金属，和选自钨或钼的第二金属。晶粒间金属(116)中第二金属的浓度高于金属晶粒(114)中第二金属的浓度。纳米结构阻挡层(110)可以在铜芯引线(100)上以提供涂布的接合引线。纳米结构阻挡层(110)可以在接合垫上以形成涂布的接合垫。公开了使用反向脉冲电镀来电镀纳米结构阻挡层(110)的方法。公开了使用涂布的接合引线的引线接合方法。

Method and apparatus for manufacturing a miniature coaxial wire and as well as the connection method of said miniature coaxial wire

A method for attaching a prefabricated miniature coaxial wire (306a, 306b, 306c) to a first electrical connection point, the prefabricated miniature coaxial wire having an electrically conductive core (316a, 316b, 316c) disposed within an electrical insulation layer (318a, 318b, 318c) disposed within an electrically conductive shield layer (320a, 320b, 320c), includes attaching an exposed portion of the electrically conductive core (316a, 316b, 316c) at a distal end of the prefabricated miniature coaxial wire (306a, 306b, 306c) to the first electrical connection point (214b, 214c, 324), thereby establishing electrical conductivity between the electrically conductive core (316a, 316b, 316c) and the first electrical connection point (214b, 214c, 324), depositing a layer of electrically insulating material (332, 338, 340) onto the exposed portion of the electrically conductive core (316a, 316b, 316c) such that the exposed portion of the electrically conductive core (316a,316b, 316c) and the first electrical connection point (214b, 214c, 324) is encased in the layer of electrically insulating material (332, 338, 340), and connecting the electrically conductive shield layer (320a, 320b, 320c) to a second electrical connection point (214a, 325) using a connector (342,444,448,450) formed from an electrically conductive material.

一种抗氧化金属制品

本发明公开了一种抗氧化金属制品，抗氧化金属制品为键合铜丝，铜丝的纯度≥99.99wt％，其表面涂覆有厚度为1～2nm的抗氧化层，抗氧化层是由以下重量份的组分组成的：富勒烯0.1～0.5份，铝2～8份，聚乙烯8～15份，聚丙烯酰胺11～16份，二硫化碳1～3份。本发明的金属制品具有涂覆层结合力高，针孔率低，耐高温，耐氧化等特点，电阻率低，具有优异的传导性，耐击穿电压高。其中，可以耐受400℃以上的高温，也可耐受200℃条件3小时，从而有效解决铜丝氧化问题。

用于铜引线接合的纳米结构阻挡层

本发明的名称为用于铜引线接合的纳米结构阻挡层。用于铜引线接合的纳米结构阻挡层(110)包括金属晶粒(114)和在金属晶粒(114)之间的晶粒间金属(116)。纳米结构阻挡层(110)包括选自镍或钴的第一金属，和选自钨或钼的第二金属。晶粒间金属(116)中第二金属的浓度高于金属晶粒(114)中第二金属的浓度。纳米结构阻挡层(110)可以在铜芯引线(100)上以提供涂布的接合引线。纳米结构阻挡层(110)可以在接合垫上以形成涂布的接合垫。公开了使用反向脉冲电镀来电镀纳米结构阻挡层(110)的方法。公开了使用涂布的接合引线的引线接合方法。

Bonding wire for semiconductor device

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.