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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 42. Отображено 42.
05-04-2018 дата публикации

WAVELENGTH-DISPERSIVE X-RAY FLUORESCENCE ANALYSIS DEVICE AND X-RAY FLUORESCENCE ANALYSIS METHOD USING SAME

Номер: WO2018061608A1
Автор: KATO, Shuichi, KATAOKA, Yoshiyuki, FUJIMURA, Hajime, YAMADA, Takashi
Принадлежит:

This wavelength-dispersive X-ray fluorescence analysis device is provided with: a position-sensitive detector (10) that detects each of the intensities of a secondary X-ray (41) at different spectral angles using a corresponding detection element (7); a measurement spectrum display means (14) that displays, on a display (15), the relation between the position of the detection element (7) in a direction of arrangement and the detection strength of the detection element (7) as a measurement spectrum; a detection area setting means (16) for setting a peak area and a background area; and a quantification means (17) that uses the peak intensity in the peak area, the background intensity in the background area, and a background correction coefficient as a basis to calculate the intensity of X-ray fluorescence to be measured as a net intensity and perform quantitative analysis.

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Номер записи: 1
04-07-2019 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICES

Номер: WO2019130570A1
Автор: ODA, Daizo, YAMADA, Takashi, ETO, Motoki, HAIBARA, Teruo, UNO, Tomohiro
Принадлежит:

Provided is a Pd-coated Cu bonding wire for semiconductor devices with which sufficient joining reliability at a ball joining portion is obtained in high-temperature environments of 175°C or higher even when the sulfur content in a mold resin used for a semiconductor device package increases. A bonding wire for semiconductor devices which has a Cu alloy core and a Pd-coating layer formed on the surface of the Cu alloy core, contains therein 0.03-2 mass%, in total, of at least one of Ni, Rh, Ir, and Pd, and further contains therein 0.002-3 mass%, in total, of at least one of Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc, and Y. With use of the abovementioned bonding wire, sufficient joining reliability at a ball joining portion is obtained in high-temperature environments of 175°C or higher even when the sulfur content in a mold resin used for a semiconductor device package increases.

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Номер записи: 2
21-03-2013 дата публикации

PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SILICON THIN-FILM SOLAR CELLS USING SAME

Номер: WO2013038899A1
Автор: YAMADA, Takashi, NASUNO, Yoshiyuki, HONDA, Shinya, NISHI, Yutaka, KIDO, Shiroh, NAKAMURA, Yoshinobu, NISHIMURA, Kazuhito
Принадлежит:

This plasma processing apparatus is provided with a chamber, and a plurality of counter electrode pairs that are positioned parallel to each other while being separated from each other in the chamber. One of the plurality of electrode pairs comprises a first electrode (31) and a second electrode (32), which are positioned separately in such a manner as to be parallel to each other. The electrodes are positioned in such a manner that the main surfaces (4) face each other. The first electrode (31) is provided with a protruding metal pipe part (14) in such a manner as to extend to a gas inlet (7). A resin pipe (13) for transferring raw gas from a raw gas supply source to the metal pipe part (14) is connected to the inside of the chamber, and as a reference for an end of a space (33), which is sandwiched due to the first electrode (31) and the second electrode (32) facing each other, the length (L) that the metal pipe part (14) protrudes is not less than 20 mm.

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Номер записи: 3
28-12-2017 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2017221434A1
Автор: ODA, Daizo, YAMADA, Takashi, ETO, Motoki, HAIBARA, Teruo, UNO, Tomohiro
Принадлежит:

This copper alloy bonding wire for a semiconductor device achieves improvement in the ball bond life in high temperature, high humidity environments. This semiconductor device bonding wire is characterized by containing a 0.03-3 mass% total of at least one of Ni, Zn, Ga, Ge, Rh, In, Ir and Pt (the first alloy group), the remainder being Cu and unavoidable impurities. By containing a prescribed amount of the first alloy group, the occurrence of intermetallic compounds, prone to corrosion in high temperature high humidity environments, is suppressed in the wire bonding interface, and ball bond life is improved.

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Номер записи: 4
14-02-2019 дата публикации

Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2019031498A1
Автор: OYAMADA Tetsuya, UNO Tomohiro, YAMADA Takashi, ODA Daizo
Принадлежит:

Provided is a bonding wire for a semiconductor device that can suppress capillary wear. A Cu alloy bonding wire for a semiconductor device is characterized in that, among crystal orientations of a wire surface, the total of the abundance ratio of a <110> crystal orientation and a <111> crystal orientation in which the angle difference with respect to the direction perpendicular to one plane including the wire center axis is 15 degrees or less is 40 to 90% in terms of average area ratio.

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Номер записи: 5
26-03-2020 дата публикации

CU ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2020059856A1
Автор: OYAMADA Tetsuya, UNO Tomohiro, YAMADA Takashi, ODA Daizo
Принадлежит:

The purpose of the present invention is to provide a Cu alloy bonding wire for a semiconductor device, the bonding wire being capable of satisfying the required performance of high-density LSI applications. A Cu alloy bonding wire for a semiconductor device according to the present invention is characterized in that, among crystal orientations of a wire surface, the abundance ratio of a <100> crystal orientation, a <110> crystal orientation, and a <111> crystal orientation that have an angular difference of 15 degrees or less relative to a direction perpendicular to one plane including the wire center axis is at least 3% and less than 27% in terms of average area ratio.

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Номер записи: 6
26-01-2017 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2017013796A1
Автор: YAMADA, Takashi, ODA, Daizo, OISHI, Ryo, UNO, Tomohiro
Принадлежит:

Provided is a bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, wherein second bonding performance is further improved in a Pd-plated lead frame, and excellent ball bonding performance can be achieved even under high humidity and heat conditions. In the bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, the concentration of Cu on the outermost surface of the wire is set at 1–10 at%, and the core contains 0.1–3.0 mass%, in total, of Pd and/or Pt, thus improving second bonding performance and enabling excellent ball bonding performance to be achieved under high humidity and heat conditions. In addition, the maximum concentration of Au in the ...

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Номер записи: 7
08-10-2015 дата публикации

BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE

Номер: WO2015152191A1
Автор: YAMADA, Takashi, ODA, Daiso, OISHI, Ryo, HAIBARA, Teruo, UNO, Tomohiro
Принадлежит:

A bonding wire for use with semiconductor devices that, in order to minimize leaning problems and spring problems, is characterized in that: (1) a cross-section that is parallel to the lengthwise direction of the wire and contains the center of the wire (a wire-center cross-section) contains no crystal grains (fibrous structures) that have a major axis (a)/minor axis (b) ratio (a/b) of 10 or more and an area of 15 µm2 or more; (2) 50% to 90% of the area of the wire-center cross-section exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire; and (3) 50% to 90% of the area of the surface of the wire exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire. During a wire-drawing step, wire drawing that results in an area reduction of at least 15.5% is performed at least once, and a final heat-treatment temperature and a final pre-heat-treatment temperature are set to within prescribed ranges.

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Номер записи: 8
28-12-2017 дата публикации

COPPER ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2017221770A1
Автор: ODA, Daizo, YAMADA, Takashi, ETO, Motoki, HAIBARA, Teruo, UNO, Tomohiro
Принадлежит:

This copper alloy bonding wire for a semiconductor device achieves improvement in the ball bond life in high temperature, high humidity environments. This semiconductor device bonding wire is characterized by containing a 0.03-3 mass% total of one or more elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir and Pt (first elements), the remainder being Cu and unavoidable impurities. By containing a prescribed amount of the first elements, the occurrence of intermetallic compounds, prone to corrosion in high temperature high humidity environments, is suppressed in the wire bonding interface, and ball bond life is improved.

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Номер записи: 9
11-04-2013 дата публикации

METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

Номер: WO2013051450A1
Автор: HONDA, Shinya, NASUNO, Yoshiyuki, YAMADA, Takashi, NISHIMURA, Kazuhito
Принадлежит:

The present invention is a method for manufacturing a photoelectric conversion device, wherein a semiconductor layer is formed on a substrate by a plasma CVD method. This method for manufacturing a photoelectric conversion device comprises a first plasma processing step (S10) wherein the processing temperature reaches a first temperature and a second plasma processing step (S40) wherein the processing temperature reaches a second temperature, and additionally comprises a temperature regulating step (S20) wherein the processing temperature is decreased to a third temperature that is lower than the first temperature and the second temperature and a heating step (S30) wherein the processing temperature is increased from the third temperature to the second temperature, said temperature regulating step (S20) and heating step (S30) being carried out after the first plasma processing step (S10) but before the second plasma processing step (S40). The first plasma processing step, the temperature ...

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Номер записи: 10
01-11-2012 дата публикации

AGENT FOR PREVENTING BACTERIAL WILT DISEASE, AND METHOD FOR PREVENTING BACTERIAL WILT DISEASE

Номер: WO2012147928A1
Автор: YAMADA Takashi, FUJIE Makoto, KAWASAKI Takeru
Принадлежит:

Provided are: an agent for preventing bacterial wilt disease, which can prevent the onset of bacterial wilt disease caused by various different bacterial wilt disease strains, i.e., the onset of bacterial wilt disease in various different plant varieties; and a method for preventing bacterial wilt disease using the agent for preventing bacterial wilt disease. The agent for preventing bacterial wilt disease is characterized by comprising a bacterial wilt disease bacterium (Ralstonia solanacearum) infected with a φRSM1-type linear phage and/or a φRSM3-type linear phage as an active ingredient. The method for preventing bacterial wilt disease is characterized by comprising a step of inoculating a plant with the agent for preventing bacterial wilt disease. The plant is preferably any one plant selected from tomato, potato, green pepper, eggplant, tobacco, hot pepper, Japanese basil, Japanese radish, strawberry, banana, marguerite, chrysanthemum and sunflower.

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Номер записи: 11
13-06-2013 дата публикации

SIMULATION DEVICE, SIMULATION METHOD AND COMPUTER PROGRAM

Номер: WO2013084306A1
Автор: YAMADA, Takashi, FURUBAYASHI, Toshie, David Christopher Dibben, HASHIMOTO, Hiroshi, SAKASHITA, Yoshiyuki, SANO, Hiroyuki
Принадлежит:

This simulation device is provided with: shape data acquisition means for acquiring shape data in which an object to be simulated is expressed; constraint condition storage means which associates, for each type of object, constraint conditions for the simulation so as to store the same; coupled analysis procedure storage means which, for each of one or a plurality of evaluation items for evaluating an object of an arbitrary shape which satisfies the constraint conditions, stores a procedure for coupled analysis using one or a plurality of simulation means related to the evaluation item; receiving means which receives the type of and an evaluation item for the object related to the acquired shape data; reading means which, on the basis of the received evaluation item for the object, reads a procedure for coupled analysis corresponding to the evaluation item from the coupled analysis procedure storage means; and coupled analysis means which, in accordance with the procedure for coupled analysis ...

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Номер записи: 12
05-04-2018 дата публикации

WAVELENGTH-DISPERSIVE X-RAY FLUORESCENCE ANALYSIS DEVICE

Номер: WO2018061607A1
Автор: KATO, Shuichi, YAMADA, Takashi, KATAOKA, Yoshiyuki
Принадлежит:

A wavelength-dispersive X-ray fluorescence analysis device is provided with a single one-dimensional detector (10) comprising a plurality of detection elements (7) that are arranged linearly. The wavelength-dispersive X-ray fluorescence analysis device is also provided with a detector position change mechanism (11) for setting the position of the one-dimensional detector (10) to either a parallel position in which the arrangement direction of the detection elements (7) becomes parallel to a spectral angle direction in a spectral element (6) or to an intersecting position in which the arrangement direction of the detection elements (7) intersects the spectral angle direction. In the parallel position, a light-receiving surface of the one-dimensional detector (10) is positioned at the focal point of a focused secondary X-ray (42). In the intersecting position, a light-receiving slit (9) is arranged at the focal point of the focused secondary X-ray (42), and the light-receiving surface of ...

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Номер записи: 13
16-02-2017 дата публикации

SEMICONDUCTOR DEVICE BONDING WIRE

Номер: WO2017026077A1
Автор: ODA, Daizo, ETO, Motoki, SAITO, Kazuyuki, HAIBARA, Teruo, OISHI, Ryo, YAMADA, Takashi, UNO, Tomohiro
Принадлежит:

Provided is a Cu bonding wire that has a Pd coating layer on the surface, that improves bonding reliability at a ball joining part in a high-temperature high-humidity environment, and that is suitable for on-board devices. This semiconductor device bonding wire has a Cu alloy core material and a Pd coating layer formed on the surface of the Cu alloy core material, wherein the bonding wire contains Ga and Ge by a total of 0.011-1.2 mass%. With this, the lifespan of the bonding at a ball joining part in a high-temperature high-humidity environment is improved, and bonding reliability can be improved. The thickness of the Pd coating layer is preferably 0.015-0.150 μm. Reliability of the ball joining part at a high temperature environment at 175°C or higher can be improved when the bonding wire further contains at least one of Ni, Ir, and Pt each by 0.011-1.2 mass%. In addition, wedge bonding property is improved when an alloy surface skin layer containing Au and Pd is further included in the ...

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Номер записи: 14
14-11-2013 дата публикации

PHOTOVOLTAIC DEVICE AND METHOD FOR PRODUCING SAME

Номер: WO2013168515A1
Автор: NISHIMURA Kazuhito, NASUNO Yoshiyuki, HONDA Shinya, YAMADA Takashi
Принадлежит:

A photovoltaic device (10) is provided with a photovoltaic layer (3) formed by laminating, in order, a p-type semiconductor layer (31), an i-type semiconductor layer (32), and an n-type semiconductor layer (33). The p-type semiconductor layer (31) comprises p-type thin silicon films (311 to 313). The p-type thin silicon films (311 and 312) use pulse power created by superimposing low-frequency pulse power from 100 Hz to 1 kHz on high-frequency power from 1 MHz and 50 MHz as plasma excitation power. The density of the high-frequency power is 100 to 300 mW/cm­2, and the pressure during plasma processing is 300 to 600 Pa. Under conditions in which the substrate temperature during plasma processing is 140 to 190°C, thin silicon film having p-type conductivity is deposited, and thin silicon film is formed through nitriding. The p-type thin silicon film (313) is deposited under the abovementioned conditions.

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Номер записи: 15
30-08-2018 дата публикации

SEMICONDUCTOR-DEVICE BONDING WIRE

Номер: WO2018155283A1
Автор: OYAMADA Tetsuya, UNO Tomohiro, YAMADA Takashi, ODA Daizo, ETO Motoki
Принадлежит:

Provided is a semiconductor-device bonding wire suitable for the state-of-the-art high-density LSI or an onboard LSI, the semiconductor-device bonding wire having an improved rate of formation of Cu-Al IMC in a ball-bonding portion. The semiconductor-device bonding wire is characterized by comprising not less than 0.1 mass % and not more than 1.3 mass % of Pt, and not less than 0.05 mass % and not more than 1.25 mass % in total of at least one selected from a first added element group consisting of In, Ga, and Ge, the remainder being Cu and inevitable impurities.

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Номер записи: 16
26-01-2017 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2017013817A1
Автор: YAMADA, Takashi, ODA, Daizo, OISHI, Ryo, UNO, Tomohiro
Принадлежит:

Provided is a bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, wherein second bonding performance is further improved in a Pd-plated lead frame, and excellent ball bonding performance can be achieved even under high humidity and heat conditions. In the bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, the concentration of Cu on the outermost surface of the wire is set at 1–10 at%, and the core contains 0.1–3.0 mass%, in total, of the metal elements in group 10 of the periodic table, thus improving second bonding performance and enabling excellent ball bonding performance to be achieved under high humidity and heat conditions. In addition ...

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Номер записи: 17
22-12-2016 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2016203659A1
Автор: YAMADA, Takashi, ODA, Daizo, HAIBARA, Teruo, OISHI, Ryo, SAITO, Kazuyuki, UNO, Tomohiro
Принадлежит:

The present invention addresses the problem of achieving a balance between a proof stress ratio (=maximum proof stress divided by the 0.2% proof stress) of 1.1-1.6, and an increase in the bonding reliability of a ball bonding part under HTS of 175-200°C in a bonding wire for a semiconductor device, said bonding wire having a Cu alloy core and a Pd coating layer formed on the surface of the Cu alloy core. The bonding reliability of a ball bonding part under HTS is increased by including, in the wire, one or more of Ni, Zn, Rh, In, Ir, and Pt in a total proportion of 0.03-2 mass%. Among the crystal orientations in the lengthwise direction of the wire as found in the measurement of crystal orientations in relation to a cross-section of the core in a direction perpendicular to the wire axis of the bonding wire, the orientation proportion of crystal orientation<100>, for which the angular difference does not exceed 15 degrees relative to the lengthwise direction of the wire, is at least 50%.

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Номер записи: 18
22-06-2017 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2017104153A1
Автор: OYAMADA Tetsuya, UNO Tomohiro, ODA Daizo, YAMADA Takashi
Принадлежит:

As bonding wire suitable for a vehicle mounted device, having superior capillary wear resistance and surface damage resistance while maintaining high bonding reliability and further satisfying total performance including ball forming performance and wedge bonding properties, provided is bonding wire for a semiconductor device that has a Cu alloy core material, a Pd coating layer formed on the surface of the Cu alloy core material, and a Cu surface layer formed on the surface of the Pd coating layer and is characterized in that the bonding wire includes Ni, the concentration of Ni to the wire as a whole is 0.1 - 1.2 percent by weight, the thickness of the Pd coating layer is 0.015 - 0.150 µm, and the thickness of the Cu surface layer is 0.0005 - 0.0070 µm.

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Номер записи: 19
04-04-2019 дата публикации

WAVELENGTH DISPERSIVE X-RAY FLUORESCENCE SPECTROMETER

Номер: WO2018061607A8
Автор: KATO, Shuichi, YAMADA, Takashi, KATAOKA, Yoshiyuki
Принадлежит:

A wavelength dispersive X-ray fluorescence spectrometer is provided with a single one-dimensional detector (10) comprising a plurality of detection elements (7) that are arranged linearly. The wavelength dispersive X-ray fluorescence spectrometer is also provided with a detector position change mechanism (11) for setting the position of the one-dimensional detector (10) to either a parallel position in which the arrangement direction of the detection elements (7) becomes parallel to a spectral angle direction in a spectral element (6) or to an intersecting position in which the arrangement direction of the detection elements (7) intersects the spectral angle direction. In the parallel position, a light-receiving surface of the one-dimensional detector (10) is positioned at the focal point of a focused secondary X-ray (42). In the intersecting position, a light-receiving slit (9) is arranged at the focal point of the focused secondary X-ray (42), and the light-receiving surface of the one-dimensional ...

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Номер записи: 20
22-06-2017 дата публикации

BACTERIOPHAGE, BACTERIAL WILT DISEASE CONTROL AGENT, AND METHOD FOR CONTROLLING BACTERIAL WILT DISEASE

Номер: WO2017104347A1
Автор: YAMADA Takashi, FUJIE Makoto, KAWASAKI Takeru
Принадлежит:

A bacteriophage having a genome size of 200,000 bp or longer, wherein a protein constituting phage particles of the bacteriophage contains both of a β-subunit of virion-associated RNA polymerase and a β'-subunit of virion-associated RNA polymerase. The bacteriophage can be transmitted to Ralstonia solanacearum.

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Номер записи: 21
03-11-2016 дата публикации

METHOD FOR FORMING BALL IN BONDING WIRE

Номер: WO2016175040A1
Автор: ARAKI Noritoshi, YAMADA Takashi, HAIBARA Teruo, OISHI Ryo, UNO Tomohiro
Принадлежит:

Provided is a ball forming method for forming a ball part at the tip of a bonding wire (1) having a core material, which has Cu as the main component, and a coating layer, which is on the surface of the core material and which has Pd as the main component, wherein the ball forming method is characterized in that the ball part is formed in a non-oxidizing atmosphere gas (5) which contains a hydrocarbon and which is a gas at room temperature and atmospheric pressure. The ball forming method makes it possible to improve the Pd coating ratio of the ball surface when forming a ball at the tip of a Pd-coated Cu bonding wire.

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Номер записи: 22
22-12-2016 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2016203899A1
Автор: YAMADA, Takashi, ODA, Daizo, HAIBARA, Teruo, OISHI, Ryo, SAITO, Kazuyuki, UNO, Tomohiro
Принадлежит:

The present invention addresses the problem of achieving a balance between a proof stress ratio (=maximum proof stress divided by the 0.2% proof stress) of 1.1-1.6, and an increase in the bonding reliability of a ball bonding part at high temperatures in a bonding wire for a semiconductor device, said bonding wire having a Cu alloy core and a Pd coating layer formed on the surface of the Cu alloy core. The bonding reliability of a ball bonding part at high temperatures is increased by including, in the wire, an element that imparts connection reliability in a high-temperature environment. Among the crystal orientations in the lengthwise direction of the wire as found in the measurement of crystal orientations in relation to a cross-section of the core in a direction perpendicular to the wire axis of the bonding wire, the orientation proportion of crystal orientation<100>, for which the angular difference does not exceed 15 degrees relative to the lengthwise direction of the wire, is at ...

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Номер записи: 23
14-02-2019 дата публикации

Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2019031497A1
Автор: OYAMADA Tetsuya, UNO Tomohiro, YAMADA Takashi, ODA Daizo
Принадлежит:

Provided is a Cu alloy bonding wire for a semiconductor device, the bonding wire being capable of satisfying the requirements of high-density LSI applications. The Cu alloy bonding wire for a semiconductor device is characterized in that, among the crystal orientations of the wire surface, the abundance ratio of <110> crystal orientation having an angular difference of 15 degrees or less relative to a direction perpendicular to one plane including the wire center axis is 25%-70% as an average area ratio.

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Номер записи: 24
05-10-2017 дата публикации

X-RAY FLUORESCENCE ANALYZER AND X-RAY FLUORESCENCE ANALYSIS METHOD

Номер: WO2017169247A1
Автор: OMOTE, Kazuhiko, OKUDA, Kazuaki, YAMADA, Takashi
Принадлежит:

An X-ray fluorescence analyzer (1) is provided with an X-ray tube (2), dispersing elements (43a-c, 44a-f) that disperse the X-rays (3) radiated by the X-ray tube (2) and reflect prescribed characteristic X-rays and prescribed consecutive X-rays that have greater energy than the prescribed characteristic X-rays, and a detector (10) for measuring the intensity of secondary X-rays (9) emitted from a sample (S) irradiated with primary X-rays (7) that include the prescribed characteristic X-rays and prescribed consecutive X-rays. The X-ray fluorescence analyzer (1) determines the quantity of an element to be measured on the basis of the ratio of the measured intensity of the X-ray fluorescence (9) emitted from the element to be measured to the measured intensity of the X-ray fluorescence that has greater energy than the prescribed characteristic X-rays and has been emitted from an internal standard element designated from the elements included in the target material of the X-ray tube (2).

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Номер записи: 25
01-09-2016 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICES

Номер: WO2016135993A1
Автор: ODA, Daizo, ETO, Motoki, YAMADA, Takashi, HAIBARA, Teruo, OISHI, Ryo, UNO, Tomohiro, OYAMADA, Tetsuya
Принадлежит:

Provided is a Cu bonding wire having a Pd coating layer on the surface, which has improved bonding reliability at a ball joint in a high-temperature high-humidity environment, and which is suitable to devices for in-vehicle use. A bonding wire for semiconductor devices, which comprises a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, and wherein the bonding wire contains In in an amount of 0.011-1.2% by mass and the Pd coating layer has a thickness of 0.015-0.150 μm. Consequently, the bonding life in a ball joint in a high-temperature high-humidity environment is improved, and the bonding reliability is able to be improved. If the Cu alloy core material contains one or more elements selected from among Pt, Pd, Rh and Ni respectively in an amount of 0.05-1.2% by mass, the ball joint reliability in a high temperature environment at 175°C or more is able to be improved. In addition, if an Au superficial layer is additionally formed ...

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Номер записи: 26
16-01-2014 дата публикации

METHOD FOR PRODUCTION OF SEMICONDUCTOR ELEMENT

Номер: WO2014010310A1
Автор: HONDA Shinya, NASUNO Yoshiyuki, NISHIMURA Kazuhito, TOMYO Atsushi, YAMADA Takashi
Принадлежит:

A transparent conductive substrate (1) of a transparent conductive film (12) formed on a translucent substrate (11) is conveyed, without undergoing washing, into the reaction chamber of a plasma device (step (a)), and the transparent conductive film (12) is treated with a plasma employing CH4 gas and H2 gas (step (b)). Subsequent to step (b), semiconductor elements are successively layered onto the transparent conductive film (12) (steps (c), (d)), producing a semiconductor element (10) (step (e)).

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Номер записи: 27
23-06-2016 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2016098707A1
Автор: OYAMADA Tetsuya, UNO Tomohiro, ODA Daizo, YAMADA Takashi
Принадлежит:

Provided is a bonding wire characterized by comprising: a core material that comprises at least one of Ga, In and Sn in a total of 0.1-3.0 at.%, the remainder comprising Ag and inevitable impurities; and a coating layer that is formed on a surface of the core material and that comprises at least one of Pd and Pt, or Ag and at least one of Pd and Pt, the remainder comprising inevitable impurities; wherein the thickness of the coating layer is 0.005-0.070 μm. The bonding wire is capable of simultaneously satisfying the ball bonding reliability and wedge bondability required of bonding wires for memories.

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Номер записи: 28
02-11-2017 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICES

Номер: WO2017187653A1
Автор: ODA, Daizo, OHKABE, Takumi, HAIBARA, Teruo, YAMADA, Takashi, OYAMADA, Tetsuya, UNO, Tomohiro
Принадлежит:

The objective of the present invention is to provide a bonding wire for semiconductor devices, which is mainly composed of Ag and achieves a sufficient and stable bonding strength at a ball joint, and which prevents the occurrence of neck damage even in a low loop, while having good leaning characteristics and a good FAB shape. In order to achieve the above-mentioned objective, a bonding wire for semiconductor devices according to the present invention is characterized by containing one or more elements selected from among Be, B, P, Ca, Y, La and Ce in an amount of 0.031-0.180% by atom in total and additionally containing one or more elements selected from among In, Ga and Cd in an amount of 0.05-5.00% by atom in total, with the balance made up of Ag and unavoidable impurities. Consequently, this bonding wire for semiconductor devices is able to ensure a bonding strength at a ball joint by forming a sufficient intermetallic compound layer at the bonding interface of a ball, while preventing ...

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Номер записи: 29
15-05-2014 дата публикации

INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD

Номер: WO2014073050A1
Автор: YAMADA, Takashi, TAKEDA, Kenichiro
Принадлежит:

An information processing device according to the present embodiment has: a network interface circuit which segments data into a plurality of packets and transmits the same, or combines a received plurality of packets into data; and a processing device which executes a driver for the network interface circuit. In addition, the network interface circuit has: a first processing unit which replicates headers of packets; and a second processing unit which outputs the headers replicated by the first processing unit to the driver. The driver which is executed by the processing device has a third processing unit which generates packets corresponding to the first-mentioned packets, using the headers received from the second processing unit and data acquired by combining the plurality of the packets with the network interface circuit or data prior to being segmented into the plurality of the packets by the network interface circuit.

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Номер записи: 30
22-12-2016 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2016204138A1
Автор: YAMADA, Takashi, ODA, Daizo, HAIBARA, Teruo, OISHI, Ryo, SAITO, Kazuyuki, UNO, Tomohiro
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Provided is a bonding wire for a semiconductor device, said bonding wire having a Cu alloy core and a Pd coating layer formed on the surface of the Cu alloy core, and being characterized by including an element that imparts connection reliability in a high-temperature environment, wherein the proof stress ratio, as defined by formula (1), is 1.1-1.6. (1) Proof stress ratio = maximum proof stress / 0.2% proof stress.

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Номер записи: 31
07-01-2016 дата публикации

X-RAY FLUORESCENCE ANALYSIS DEVICE AND METHOD

Номер: WO2016002357A1
Автор: YAMADA, Takashi, SHIMIZU, Yuichiro
Принадлежит:

This X-ray fluorescence analysis device is provided with the following: an X-ray source (3) that exposes a sample (1), said sample (1) consisting of a large number of nanoparticles placed on top of a substrate (10), to primary X-rays (6); an exposure-angle adjustment means (5) that adjusts the exposure angle (α) at which the surface (10a) of the substrate is exposed to the primary X-rays (6); a detection means (8) that measures the intensity of X-ray fluorescence (7) produced by the sample (1); a peak-position computation means (11) that creates a sample profile indicating how the intensity of the X-ray fluorescence (7) varies as the exposure angle (α) varies and computes a peak exposure-angle position; a particle-size calibration-curve creation means (21) that creates a calibration curve representing the correlation between the peak exposure-angle position and the size of the nanoparticles (1); and a particle-size computation means (22) that computes the size of nanoparticles in an unknown ...

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Номер записи: 32
30-06-2016 дата публикации

GRAZING INCIDENCE X-RAY FLUORESCENCE SPECTROMETER AND GRAZING INCIDENCE X-RAY FLUORESCENCE ANALYZING METHOD

Номер: WO2016103834A8
Автор: OMOTE, Kazuhiko, YAMADA, Takashi
Принадлежит:

A grazing incidence X-ray fluorescence spectrometer (1) according to the present invention is provided with an X-ray source (2), a curved spectral element (4) for dispersing X-rays (3) from the X-ray source (2) and forming an X-ray beam (5) focused on a fixed position (15) on the surface of a sample (S), a slit (6) that is disposed between the curved spectral element (4) and sample (S) and has a linear opening (61), a slit movement means (7) for moving the slit (6) in a direction crossing the X-ray beam (5) passing through the linear opening (61), a glancing angle setting means (8) for setting the glancing angle (α) of the X-ray beam (5) to a desired angle by moving the slit (6) using the slit movement means (7), and a detector (10) for measuring the intensity of the X-ray fluorescence (9) emitted from the sample (S) irradiated by the X-ray beam (5).

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Номер записи: 33
23-12-2015 дата публикации

BACTERIOPHAGE, AGENT FOR PREVENTING XANTHOMONAS CAMPESTRIS DISEASE, AND METHOD FOR PREVENTING XANTHOMONAS CAMPESTRIS DISEASE

Номер: WO2015194540A1
Автор: YAMADA Takashi, FUJIE Makoto, KAWASAKI Takeru
Принадлежит:

A bacteriophage, having phage particles of linear structure, infects Xanthomonas campestris pv. citri. This bacteriophage may have a genome size of 7,000-8,000 b. This bacteriophage may have a genome configuration including a DNA replication module, a structural protein module, an assembly and secretion module, and a regulatory region.

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Номер записи: 34
07-01-2016 дата публикации

X-RAY FLUORESCENCE SPECTROMETER AND X-RAY FLUORESCENCE ANALYZING METHOD

Номер: WO2016002357A8
Автор: YAMADA, Takashi, SHIMIZU, Yuichiro
Принадлежит:

This X-ray fluorescence spectrometer is provided with the following: an X-ray source (3) that exposes a sample (1), said sample (1) consisting of a large number of nanoparticles placed on top of a substrate (10), to primary X-rays (6); an exposure-angle adjustment means (5) that adjusts the exposure angle (α) at which the surface (10a) of the substrate is exposed to the primary X-rays (6); a detection means (8) that measures the intensity of X-ray fluorescence (7) produced by the sample (1); a peak-position computation means (11) that creates a sample profile indicating how the intensity of the X-ray fluorescence (7) varies as the exposure angle (α) varies and computes a peak exposure-angle position; a particle-size calibration-curve creation means (21) that creates a calibration curve representing the correlation between the peak exposure-angle position and the size of the nanoparticles (1); and a particle-size computation means (22) that computes the size of nanoparticles in an unknown ...

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Номер записи: 35
06-09-2013 дата публикации

POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND BONDING WIRE

Номер: WO2013129253A1
Автор: TATSUMI Kohei, YAMADA Takashi, ODA Daizou
Принадлежит:

The present invention addresses the issue of providing: a power semiconductor device, which can be used without a problem even if heat stress is generated, and which is capable of reducing heat generated by a wire, and is capable of ensuring reliability of a bonding section even under high-temperature environments, at the time when the current capacity of the power semiconductor device is increased and the power semiconductor device is used under high-temperature environments; a method for manufacturing the power semiconductor device; and a bonding wire. In a power semiconductor device (1), a metal electrode (element electrode (3)) and the other metal electrode (connecting electrode (4)), which are on a power semiconductor element (2), are both wedge-connected by means of a metal wire (5). The metal wire (5) is an Ag wire or an Ag alloy wire having a diameter larger than 50 μm but equal to or smaller than 2 mm, and the element electrode (3) has, on the surface thereof, one or more metal ...

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Номер записи: 36
26-07-2018 дата публикации

WAVELENGTH DISPERSIVE X-RAY FLUORESCENCE SPECTROMETER AND X-RAY FLUORESCENCE ANALYZING METHOD USING THE SAME

Номер: WO2018061608A8
Автор: KATO, Shuichi, KATAOKA, Yoshiyuki, FUJIMURA, Hajime, YAMADA, Takashi
Принадлежит:

This wavelength dispersive X-ray fluorescence spectrometer is provided with: a position-sensitive detector (10) that detects each of the intensities of a secondary X-ray (41) at different spectral angles using a corresponding detection element (7); a measurement spectrum display means (14) that displays, on a display (15), the relation between the position of the detection element (7) in a direction of arrangement and the detection strength of the detection element (7) as a measurement spectrum; a detection area setting means (16) for setting a peak area and a background area; and a quantification means (17) that uses the peak intensity in the peak area, the background intensity in the background area, and a background correction coefficient as a basis to calculate the intensity of X-ray fluorescence to be measured as a net intensity and perform quantitative analysis.

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Номер записи: 37
01-12-2016 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2016189752A1
Автор: YAMADA, Takashi, ODA, Daizo, HAIBARA, Teruo, UNO, Tomohiro
Принадлежит:

Provided is a Cu bonding wire having a Pd coating layer on the surface thereof, the bonding wire being suitable for vehicle-mounted devices and having improved bonding reliability at ball joints in a high-temperature high-humidity environment. This bonding wire for semiconductor devices includes: a Cu alloy core material; and a Pd coating layer formed on the surface thereof. The bonding wire includes a total of from 0.1 to 100 ppm by mass of one or more types of elements among Ga, Ge, As, Te, Sn, Sb, Bi, and Se. Thus, the bonding life of ball joints in a high-temperature high-humidity environment is improved, and bonding reliability can be improved. When the Cu alloy core material further includes from 0.011 to 1.2 mass% of one or more of Ni, Zn, Rh, In, Ir, and Pt, ball joint reliability in a high-temperature environment of 170°C or higher can be improved. Further, when an alloy skin layer including Au and Pd is formed on the surface of the Pd coating layer, wedge bondability is improved ...

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Номер записи: 38
01-12-2016 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2016189758A1
Автор: YAMADA, Takashi, ODA, Daizo, HAIBARA, Teruo, UNO, Tomohiro
Принадлежит:

Provided is a Cu bonding wire having a Pd coating layer on the surface thereof, the bonding wire being suitable for vehicle-mounted devices and having improved bonding reliability at ball joints in a high-temperature high-humidity environment. This bonding wire for semiconductor devices includes: a Cu alloy core material; and a Pd coating layer formed on the surface thereof. The bonding wire includes a total of from 0.1 to 100 ppm by mass of one or more types of elements among As, Te, Sn, Sb, Bi, and Se. Thus, the bonding life of ball joints in a high-temperature high-humidity environment is improved, and bonding reliability can be improved. When the Cu alloy core material further includes from 0.011 to 1.2 mass% of one or more of Ni, Zn, Rh, In, Ir, Pt, Ga, and Ge, ball joint reliability in a high-temperature environment of 170°C or higher can be improved. Further, when an alloy skin layer including Au and Pd is formed on the surface of the Pd coating layer, wedge bondability is improved ...

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Номер записи: 39
03-03-2016 дата публикации

CYLINDRICAL FORMED BODY FOR Cu PILLARS FOR SEMICONDUCTOR CONNECTION

Номер: WO2016031989A1
Автор: YAMADA, Takashi, ODA, Daizo, HAIBARA, Teruo, TERASHIMA, Shinichi
Принадлежит:

The present invention addresses the issues of, when providing and electrically connecting Cu pillars to semiconductor chips, increasing the height/diameter ratio of Cu pillars, improving productivity, enabling the height of Cu pillars to be increased, and increasing the reliability of Cu pillars, in comparison to methods whereby Cu pillars are formed by plating. In order to solve said issues, a material for Cu pillars is pre-formed as a cylindrical formed body and this cylindrical formed body is electrically connected to an electrode upon a semiconductor chip, to provide a Cu pillar. As a result, the height/diameter ratio of Cu pillars can be at least 2.0. Electric plating is not used, therefore the time required for Cu pillar production can be shortened and productivity improved. In addition, the Cu pillar height can be at least 200 µm, making the Cu pillars suitable for molded underfill. Components can be freely adjusted, thereby enabling easy design of alloy components for highly reliable ...

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Номер записи: 40
08-10-2015 дата публикации

BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE

Номер: WO2015152197A1
Автор: YAMADA, Takashi, ODA, Daiso, OISHI, Ryo, HAIBARA, Teruo, UNO, Tomohiro
Принадлежит:

A bonding wire for use with semiconductor devices that, in order to minimize leaning problems and spring problems, is characterized in that: (1) a cross-section that is parallel to the lengthwise direction of the wire and contains the center of the wire (a wire-center cross-section) contains no crystal grains (fibrous structures) that have a major axis (a)/minor axis (b) ratio (a/b) of 10 or more and an area of 15 µm2 or more; (2) at least 10% but less than 50% of the area of the wire-center cross-section exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire; and (3) at least 70% of the area of the surface of the wire exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire. During a wire-drawing step, wire drawing that results in an area reduction of at least 15.5% is performed at least once, and a final heat-treatment temperature and a final pre-heat-treatment temperature are set to within prescribed ranges.

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Номер записи: 41
26-03-2020 дата публикации

CU ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: WO2020059856A9
Автор: OYAMADA Tetsuya, UNO Tomohiro, YAMADA Takashi, ODA Daizo
Принадлежит:

The purpose of the present invention is to provide a Cu alloy bonding wire for a semiconductor device, the bonding wire being capable of satisfying the required performance of high-density LSI applications. A Cu alloy bonding wire for a semiconductor device according to the present invention is characterized in that, among crystal orientations of a wire surface, the abundance ratio of a <100> crystal orientation, a <110> crystal orientation, and a <111> crystal orientation that have an angular difference of 15 degrees or less relative to a direction perpendicular to one plane including the wire center axis is at least 3% and less than 27% in terms of average area ratio.

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Номер записи: 42