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Применить Всего найдено 4. Отображено 4.
22-06-2017 дата публикации

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Номер: US20170179064A1
Принадлежит:

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %. 1. A bonding wire for a semiconductor device comprising:a core material having Cu as a main component and containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1% by mass or more and 3.0% by mass or less;a coating layer having Pd as a main component provided on a surface of the core material; anda skin alloy layer containing Au and Pd provided on a surface of the coating layer,wherein a concentration of Cu at an outermost surface of the wire is 1 at % or more and 10 at % or less, and the metallic element of Group 10 of the Periodic Table of Elements comprises Ni.2. The bonding wire for a semiconductor device according to claim 1 , wherein the metallic element of Group 10 of the Periodic Table of Elements further comprises either or both of Pd and Pt.3. (canceled)4. The bonding wire for a semiconductor device according to claim 1 , whereinthe coating layer having Pd as a main component has a thickness of 20 nm or more and 90 nm or less, andthe skin alloy layer containing Au and Pd has a thickness of 0.5 nm or more and to 40 nm or less and has a maximum concentration of Au of 15 at % or more and 75 at % or less.5. The bonding wire for a semiconductor device according to claim 1 , whereinthe core material further contains Au, andthe total amount of Ni, Pd, Pt and Au in the core ...

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26-01-2017 дата публикации

Bonding wire for semiconductor device

Номер: WO2017013796A1

Provided is a bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, wherein second bonding performance is further improved in a Pd-plated lead frame, and excellent ball bonding performance can be achieved even under high humidity and heat conditions. In the bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, the concentration of Cu on the outermost surface of the wire is set at 1–10 at%, and the core contains 0.1–3.0 mass%, in total, of Pd and/or Pt, thus improving second bonding performance and enabling excellent ball bonding performance to be achieved under high humidity and heat conditions. In addition, the maximum concentration of Au in the cover alloy layer is preferably 15–75 at%.

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16-09-2016 дата публикации

Improved coated copper wire for bonding applications

Номер: TW201633482A

本發明係關於一種電線,其包含具有表面之芯、具有層表面之第一塗層及另外塗層,其中A)該芯包含a)至少99.95wt.%之銅,b)量X之選自銀及金的至少一種元素,c)量Y之選自磷、鎂及鈰的至少一種元素,其中X與Y之比率在自0.03至50之範圍中;B)該第一塗層由選自包含鈀、鉑及銀之群之至少一種元素構成,其中該第一塗層疊加於該芯之該表面上,C)該另外塗層疊加於該第一塗層之該層表面上,其中該另外塗層由金構成。本發明進一步係關於一種用於製造如前述之電線之方法,及係關於一種包含本發明之電線之電裝置。

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26-09-2017 дата публикации

Bonding wire for semiconductor device

Номер: US09773748B2

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

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