13-06-2013 дата публикации
Номер: US20130146987A1
A SRAM device with metal gate transistors is provided. The SRAM device includes a PMOS structure and an NMOS structure over a substrate. Each of the PMOS and the NMOS structure includes a p-type metallic work function layer and an n-type metallic work function layer. The p-type work metallic function layer and the n-type metallic work function layer form a combined work function for the PMOS and the NMOS structures. 19-. (canceled)10. A semiconductor device comprising: a first gate dielectric overlying a substrate;', 'a first metal gate overlying the first gate dielectric;', 'a second metal gate overlying the first metal gate; and', 'a first conductor overlying the second metal gate; and, 'a NMOS structure, comprising,'} a second gate dielectric overlying the substrate;', 'a third metal gate overlying the second gate dielectric;', 'a fourth metal gate overlying the third metal gate; and', 'a second conductor overlying the fourth metal gate,, 'a PMOS structure, comprising,'}wherein the first metal gate is the same as the third metal gate and the second metal gate layer is the same as the fourth metal gate.11. The semiconductor device of claim 10 , wherein the device is static random access memory (SRAM).12. The semiconductor device of claim 10 , wherein the first and the third metal gates are p-type work function layers.13. The semiconductor device of claim 12 , wherein the p-type work function layers are titanium nitride claim 12 , tantalum nitride claim 12 , or cobalt.14. The semiconductor device of claim 10 , wherein the second and the fourth metal gates are n-type work function layers.15. The semiconductor device of claim 14 , wherein the n-type work function layers are titanium claim 14 , tantalum claim 14 , aluminum claim 14 , or combinations thereof.16. The semiconductor device of claim 10 , wherein the PMOS structure has a combined work function ranging from about 4.4 eV to about 4.8 eV.17. The semiconductor device of claim 10 , wherein the NMOS structure has ...
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