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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 240938. Отображено 100.
05-01-2012 дата публикации

Physical information acquisition method, physical information acquisition device, and semiconductor device

Номер: US20120001072A1
Автор: Atsushi Toda, Genta Sato
Принадлежит: Sony Corp

A physical information acquisition method in which a corresponding wavelength region of visible light with at least one visible light detection unit coupled to an image signal processing unit is detected, each said visible light detection unit comprising a color filter adapted to transmit the corresponding wavelength region of visible light; a wavelength region of infrared light with at least one infrared light detection unit coupled to the image signal processing unit is detected; and, with the signal processing unit, a first signal received from the at least one visible light detection unit by subtracting a product from said first signal is corrected, said product resulting from multiplication of a second signal received from the at least one infrared light detection unit and a predetermined coefficient factor.

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Номер записи: 1
05-01-2012 дата публикации

Radiographic imaging system

Номер: US20120001082A1
Автор: Kazuo Hashiguchi, Makoto Shoho
Принадлежит: Sharp Corp

A response with a wider dynamic range is obtained without a need for irradiating strong radiation onto a subject (human body). A CCD controller 22 allows reading of imaging signals from CCD image sensors 1 to 12, which is performed twice during different time periods, once during a long exposure time period and once during a short exposure time period, with respect to the irradiation of a constant dose of radiation by an X-ray generator 25; and a main controller 26 allows a memory 24 to synthesize image data from the successively twice-read imaging signals into an image with proper timing. As a result, it becomes unnecessary to irradiate strong radiation onto a subject, such as a human body and other substances, as is done conventionally, owing to a radiation dose weak enough not to cause a harmful influence.

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Номер записи: 2
05-01-2012 дата публикации

Single poly cmos imager

Номер: US20120001242A1
Автор: Howard E. Rhodes
Принадлежит: Round Rock Research LLC

More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.

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Номер записи: 3
05-01-2012 дата публикации

Semiconductor device

Номер: US20120001243A1
Автор: Kiyoshi Kato
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material.

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Номер записи: 4
05-01-2012 дата публикации

Pixel structure with multiple transfer gates

Номер: US20120002089A1
Автор: Bram Wolfs, Guy Meynants, Xinyang Wang
Принадлежит: CMOSIS BVBA

A pixel structure comprises a photo-sensitive element for generating charge in response to incident light. A first transfer gate is connected between the photo-sensitive element and a first charge conversion element. A second transfer gate is connected between the photo-sensitive element and a second charge conversion element. An output stage outputs a first value related to charge at the first charge conversion element and outputs a second value related to charge at the second charge conversion element. A controller controls operation of the pixel structures and causes a pixel structure. The controller causes the pixel structure to: acquire charges on the photo-sensitive element during an exposure period; transfer a first portion of the charges acquired during the exposure period from the photo-sensitive element to the first charge conversion element via the first transfer gate; and transfer a second portion of the charges acquired during the exposure period from the photo-sensitive element to the second charge conversion element via the second transfer gate.

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Номер записи: 5
14-03-2017 дата публикации

Матричный квазиоптический приемник электромагнитного излучения

Номер: RU0000169300U1
Автор: Игорь Владиленович Минин, Олег Владиленович Минин
Принадлежит: Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет геосистем и технологий" (СГУГиТ)

Использование: для систем визуализации. Сущность полезной модели заключается в том, что матричный квазиоптический приемник электромагнитного излучения содержит подложку и размещенные на ней один или несколько приемных элементов, чувствительных к электромагнитному излучению, и микрокомпонентов, выполненных из диэлектрических или полупроводниковых материалов с коэффициентом преломления материала, лежащим в диапазоне от 1.4 до примерно 2, расположенных рядом с каждым приемным элементом со стороны падающего электромагнитного излучения и центрированных с ним, формирующих и направляющих фотонные струи в соответствующий приемный элемент, при этом характерный размер микрокомпонентов составляет более характерного размера приемного элемента, микрокомпоненты выполнены в форме кубика с величиной ребра не менее 0.5λ. Технический результат: обеспечение возможности уменьшения габаритов матричного квазиоптического приемника с одновременным повышением чувствительности и разрешающей способности. 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 169 300 U1 (51) МПК H01L 27/14 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ФОРМУЛА ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21)(22) Заявка: 2016127375, 08.11.2016 (24) Дата начала отсчета срока действия патента: 08.11.2016 (72) Автор(ы): Минин Игорь Владиленович (RU), Минин Олег Владиленович (RU) 14.03.2017 Приоритет(ы): (22) Дата подачи заявки: 08.11.2016 Адрес для переписки: 630108, г. Новосибирск, ул. Плахотного, 10, ФГБОУ ВО "Сибирский государственный университет геосистем и технологий" (СГУГиТ) (56) Список документов, цитированных в отчете о поиске: RU 155915 U1, 20.10.2015. US 20120060913 A1, 15.03.2012. RU 153680 U1, 27.07.2015. WO 2002084340 A1, 24.10.2002. RU 153686 U1, 27.07.2015. 1 6 9 3 0 0 (45) Опубликовано: 14.03.2017 Бюл. № 8 R U (73) Патентообладатель(и): Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет геосистем и технологий" ( ...

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Номер записи: 6
31-10-2018 дата публикации

Фотодиэлектрический чувствительный элемент для регистрации оптического излучения

Номер: RU0000184584U1
Автор: Дмитрий Евгеньевич Шашин
Принадлежит: Федеральное государственное бюджетное образовательное учреждение высшего образования "Поволжский государственный технологический университет"

Полезная модель относится к области измерительной техники и касается фотодиэлектрического чувствительного элемента для регистрации оптического излучения. Фотодиэлектрический чувствительный элемент включает в себя оптически прозрачную подложку и электроды встречно-штыревой конфигурации с расстоянием между штырями электродов 5 мкм, расположенные между прозрачной подложкой из оптического стекла марки КВ и тонкой пленкой оксида цинка с сопротивлением 10Ом⋅см. На поверхности тонкой пленки сформированы контактные площадки для проводящих выводов. Пленка оксида цинка формируется методом реактивного магнетронного распыления с дальнейшим отжигом при температуре 500C. Измерение оптического излучения осуществляется посредством изменения диэлектрической проницаемости тонкой пленки оксида цинка под действием оптического излучения. Технический результат заключается в устранении темнового тока при регистрации оптического излучения. 1 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 184 584 U1 (51) МПК H01L 27/14 (2006.01) H01G 9/20 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 27/14 (2006.01); H01G 9/20 (2006.01) (21)(22) Заявка: 2018126379, 17.07.2018 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): Федеральное государственное бюджетное образовательное учреждение высшего образования "Поволжский государственный технологический университет" (RU) Дата регистрации: 31.10.2018 (56) Список документов, цитированных в отчете о поиске: RU 267146 C1, 03.08.2017. CN (45) Опубликовано: 31.10.2018 Бюл. № 31 103346171 A, 09.10.2013. US 9059417 B1, 16.06.2015. UA 81905 C2, 25.10.2008. пленкой оксида цинка с сопротивлением 1011 Ом⋅см. На поверхности тонкой пленки R U 1 8 4 5 8 4 (54) Фотодиэлектрический чувствительный элемент для регистрации оптического излучения (57) Реферат: Полезная модель относится к области сформированы контактные площадки для измерительной техники и касается проводящих выводов. ...

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Номер записи: 7
12-01-2012 дата публикации

Reconfigurable Multilayer Circuit

Номер: US20120007038A1
Автор: Dmitri Borisovich Strukov, R. Stanley Williams, Yevgeniy Eugene Shteyn
Принадлежит: Hewlett Packard Development Co LP

A reconfigurable multilayer circuit ( 400 ) includes a complimentary metal-oxide-semiconductor (CMOS) layer ( 210 ) having control circuitry, logic gates ( 515 ), and at least two crossbar arrays ( 205, 420 ) which overlie the CMOS layer ( 210 ). The at least two crossbar arrays ( 205, 420 ) are configured by the control circuitry and form reconfigurable interconnections between the logic gates ( 515 ) within the CMOS layer ( 210 ).

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Номер записи: 8
12-01-2012 дата публикации

Area Sensor and Display Apparatus Provided With An Area Sensor

Номер: US20120007090A1
Автор: Hajime Kimura, Jun Koyama, Masato Yonezawa, Shunpei Yamazaki, Yu Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

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Номер записи: 9
12-01-2012 дата публикации

Method of manufacturing a semiconductor device

Номер: US20120007094A1
Автор: Takashi Hamada, Yasuyuki Arai
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.

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Номер записи: 10
12-01-2012 дата публикации

Solid imaging device

Номер: US20120007149A1
Автор: Hisanori Suzuki, Kentaro Maeta, Masaharu Muramatsu, Yasuhito Yoneta
Принадлежит: Hamamatsu Photonics KK

In a solid-state imaging device 1 , an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 16 1 to 16 5 are electrically connected to the OFG 5 at connecting parts 17 1 to 17 5 . Therefore, when voltage values V 1 to V 5 applied to the connecting parts 17 1 to 17 5 by the voltage application units 16 1 to 16 5 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4 , whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.

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Номер записи: 11
12-01-2012 дата публикации

Protecting bond pad for subsequent processing

Номер: US20120007199A1
Автор: Helen Hongwei Li, Jeanne M. McNamara, John T. Gasner, Joy Ellen Jones, Phillip J. Benzel
Принадлежит: INTERSIL AMERICAS LLC

A method for opening a bond pad on a semiconductor device is provided. The method comprises removing a first layer to expose a first portion of the bond pad and forming a protective layer over the exposed first portion of the bond pad. The method further comprises performing subsequent processing of the semiconductor device and removing the protective layer to expose a second portion of the bond pad.

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Номер записи: 12
12-01-2012 дата публикации

Monolithic photodetector

Номер: US20120007201A1
Автор: Christophe Aumont, Cyril Fellous, Francois Roy, Nicolas Hotellier
Принадлежит: STMICROELECTRONICS SA

A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R 1 R 2 R 3 SiOSiR 1 R 2 R 3 where R 1 , R 2 , and R 3 are any carbonaceous or metal substituents and where one of R 1 , R 2 , or R 3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.

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Номер записи: 13
19-01-2012 дата публикации

Solid-state imaging device and method of manufacturing the same, radiological imaging apparatus and method of manufacturing the same, and method of testing solid-state imaging device

Номер: US20120012753A1
Автор: Harumichi Mori, Kazuki Fujita, Ryuji Kyushima
Принадлежит: Hamamatsu Photonics KK

A solid-state imaging device according to one embodiment includes a plurality of signal output units. Each of the plurality of signal output units includes a first input terminal electrode group that includes a plurality of terminal electrodes for inputting a reset signal, a hold signal, a horizontal start signal, and a horizontal clock signal and a first output terminal electrode that provides output signals. The solid-state imaging device further includes a second input terminal electrode group that includes a plurality of terminal electrodes for receiving the reset signal, the hold signal, the horizontal start signal, and the horizontal clock signal, a plurality of switches that switch an electrode group which is connected with integrating circuits, holding circuits, and a horizontal shift register between the first input terminal electrode group and the second input terminal electrode group, and a second output terminal electrode.

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Номер записи: 14
19-01-2012 дата публикации

Semiconductor device

Номер: US20120012837A1
Автор: Kiyoshi Kato, Shuhei Nagatsuka, Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of write cycles. The semiconductor device includes a memory cell including a first transistor, a second transistor, and an insulating layer placed between a source region or a drain region of the first transistor and a channel formation region of the second transistor. The first transistor and the second transistor are provided to at least partly overlap with each other. The insulating layer and a gate insulating layer of the second transistor satisfy the following formula: (t a /t b )×(ε ra /ε rb )<0.1, where t a represents the thickness of the gate insulating layer, t b represents the thickness of the insulating layer, ε ra represents the dielectric constant of the gate insulating layer, and ε rb represents the dielectric constant of the insulating layer.

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Номер записи: 15
19-01-2012 дата публикации

Display device and electronic device including the same

Номер: US20120012847A1
Автор: Jun Koyama, Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

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Номер записи: 16
19-01-2012 дата публикации

Semiconductor device and a method of manufacturing the same

Номер: US20120012851A1
Автор: Hideaki Kuwabara, Jun Koyama, Shunpei Yamazaki, Yasuyuki Arai
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.

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Номер записи: 17
19-01-2012 дата публикации

Light emitting device

Номер: US20120012888A1
Автор: Jun Koyama, Munehiro Azami, Shunpei Yamazaki, Tatsuya Arao
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

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Номер записи: 18
19-01-2012 дата публикации

Vertically Fabricated BEOL Non-Volatile Two-Terminal Cross-Trench Memory Array with Two-Terminal Memory Elements and Method of Fabricating the Same

Номер: US20120012897A1
Автор: Paul Besser, Robin Cheung, Wen Zhong Kong
Принадлежит: Unity Semiconductor Corp

A non-Flash non-volatile cross-trench memory array formed using an array of trenches formed back-end-of-the-line (BEOL) over a front-end-of-the-line (FEOL) substrate includes two-terminal memory elements operative to store at least one bit of data that are formed at a cross-point of a first trench and a second trench. The first and second trenches are arranged orthogonally to each other. At least one layer of memory comprises a plurality of the first and second trenches to form a plurality of memory elements. The non-volatile memory can be used to replace or emulate other memory types including but not limited to embedded memory, DRAM, SRAM, ROM, and FLASH. The memory is randomly addressable down to the bit level and erase or block erase operation prior to a write operation are not required.

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Номер записи: 19
19-01-2012 дата публикации

Semiconductor device and method for fabricating the same

Номер: US20120012944A1
Автор: Jae-Yun YI
Принадлежит: Hynix Semiconductor Inc

A semiconductor device includes a memory block including a transistor region and a memory region. A variable resistance layer of the memory region acts as a gate insulating layer in the transistor region.

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Номер записи: 20
19-01-2012 дата публикации

Magnetic memory

Номер: US20120012955A1
Автор: Hiroyuki Yamamoto, Jun Hayakawa, Katsuya Miura, Kenchi Ito
Принадлежит: HITACHI LTD

Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression M s 2 (t/w)>|J ex |>(2k B TΔ)/S, in which k B is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and M s are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and J ex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.

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Номер записи: 21
19-01-2012 дата публикации

Charged particle collector for a cmos imager

Номер: US20120012958A1
Автор: Dan Wesley Chilcott, John Richard Troxell, William J. Baney
Принадлежит: ITT Manufacturing Enterprises LLC

Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes.

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Номер записи: 22
19-01-2012 дата публикации

Semiconductor device

Номер: US20120014157A1
Автор: Hiroki Inoue, Kiyoshi Kato, Shuhei Nagatsuka, Takanori Matsuzaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region.

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Номер записи: 23
19-01-2012 дата публикации

Nonvolatile Semiconductor Memory

Номер: US20120014181A1
Автор: Masaaki Mihara, Moriyoshi Nakashima, Natsuo Ajika, Shoji Shukuri
Принадлежит: Genusion Inc

A hot electron (BBHE) is generated close to a drain by tunneling between bands, and it data writing is performed by injecting the hot electron into a charge storage layer. When Vg is a gate voltage, Vsub is a cell well voltage, Vs is a source voltage and Vd is a drain voltage, a relation of Vg>Vsub>Vs>Vd is satisfied, Vg−Vd is a value of a potential difference required for generating a tunnel current between the bands or higher, and Vsub−Vd is substantially equivalent to a barrier potential of the tunnel insulating film or higher.

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Номер записи: 24
26-01-2012 дата публикации

Signal processing device and photodetection device

Номер: US20120018621A1
Автор: Hiroo Yamamoto, Makoto Kobayashi, Seiichiro Mizuno
Принадлежит: Hamamatsu Photonics KK

In a signal processing device of an embodiment, an integration circuit accumulates a charge from a photodiode in an integrating capacitor element, and outputs a voltage value according to the amount of charge. A comparator circuit, when the voltage value from the integration circuit has reached a reference value, outputs a saturation signal. A charge injection circuit, in response to the saturation signal, injects an opposite polarity of charge into the integrating capacitor element. A counter circuit performs counting based on the saturation signal. A holding circuit holds the voltage value from the integration circuit. An amplifier circuit outputs a voltage value that is K times (where K>1) larger than the voltage value held by the holding circuit. An A/D converter circuit sets a voltage value that is K times larger than the reference value as the maximum input voltage value, that is, a full-scale value, and outputs a digital value corresponding to the voltage value from the amplifier circuit.

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Номер записи: 25
26-01-2012 дата публикации

Display substrate and method of manufacturing the same

Номер: US20120018720A1
Автор: Dong-Hoon Lee, Hye-Young Ryu, Jae-Woo Park, Sung-Haeng CHO, Woo-Geun Lee, Young-Joo Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.

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Номер записи: 26
26-01-2012 дата публикации

Integrated lighting apparatus and method of manufacturing the same

Номер: US20120018745A1
Автор: Cheng Nan Han, Chih-Chiang Lu, Hsin-Mao Liu, Meng-Yuan Hong, Min-Hsun Hsieh, Ta-Cheng Hsu, Tsung-Xian Lee, Tzer-Perng Chen
Принадлежит: Epistar Corp

An integrated lighting apparatus includes at least a lighting device, a control device comprising an integrated circuit, and a connector that is used to electrically connect the lighting device and the control device. With the combination, the integrated circuit drives the lighting device in accordance with its various designed functionality, thus expands applications of the integrated lighting apparatus.

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Номер записи: 27
26-01-2012 дата публикации

Semiconductor device and method for manufacturing same

Номер: US20120018783A1
Автор: Hidenobu Nagashima, Hiroshi Akahori, Kazuaki Iwasawa, Kiyohito Nishihara, Masaki Kondo, Shigeo Kondo, Takashi Ichikawa, Yingkang ZHANG
Принадлежит: Individual

According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a first isolation groove penetrating through a conductive film serving as the gate electrode to reach the semiconductor substrate. The method can include forming a protection film covering a side wall of the first isolation groove including a side face of the gate electrode. The method can include forming a second isolation groove by etching the semiconductor substrate exposed to a bottom surface of the first isolation groove. The method can include oxidizing an inner surface of the second isolation groove provided on each of both sides of the gate electrode to form first insulating films, which are connected to each other under the gate electrode. In addition, the method can include filling an inside of the first isolation groove and an inside of the second isolation groove with a second insulating film.

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Номер записи: 28
26-01-2012 дата публикации

Semiconductor-on-insulator (soi) structure with selectively placed sub-insulator layer void(s) and method of forming the soi structure

Номер: US20120018806A1
Автор: Richard Q. Williams, Robert R. Robison, Toshiharu Furukawa
Принадлежит: International Business Machines Corp

Disclosed is a semiconductor-on-insulator (SOI) structure having sub-insulator layer void(s) selectively placed in a substrate so that capacitance coupling between a first section of a semiconductor layer and the substrate will be less than capacitance coupling between a second section of the semiconductor layer and the substrate. The first section may contain a first device on an insulator layer and the second section may contain a second device on the insulator layer. Alternatively, the first and second sections may comprise different regions of the same device on an insulator layer. For example, in an SOI field effect transistor (FET), sub-insulator layer voids can be selectively placed in the substrate below the source, drain and/or body contact diffusion regions, but not below the channel region so that capacitance coupling between the these various diffusion regions and the substrate will be less than capacitance coupling between the channel region and the substrate. Also, disclosed is an associated method of forming such an SOI structure.

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Номер записи: 29
26-01-2012 дата публикации

Image sensor having dark sidewalls between color filters to reduce optical crosstalk

Номер: US20120019695A1
Автор: Duli Mao, Howard E. Rhodes, Hsin-Chih Tai, Vincent Venezia, YIN Qian
Принадлежит: Omnivision Technologies Inc

An apparatus and technique for fabricating an image sensor including the dark sidewall films disposed between adjacent color filters. The image sensor further includes an array of photosensitive elements disposed in a substrate layer, a color filter array (“CFA”) including CFA elements having at least two different colors disposed on a light incident side of the substrate layer, and an array of microlenses disposed over the CFA. Each microlens is aligned to direct light incident on the light incident side of the image sensor through a corresponding CFA element to a corresponding photosensitive element. The dark sidewall films are disposed on sides of the CFA elements and separate adjacent ones of the CFA elements having different colors.

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Номер записи: 30
26-01-2012 дата публикации

Reflective liquid crystal display panel and device using same

Номер: US20120019739A1
Автор: Hisashi Ohtani, Jun Koyama, Satoshi Teramoto, Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

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Номер записи: 31
26-01-2012 дата публикации

Portable computer display structures

Номер: US20120020002A1
Автор: Brett W. Degner, Bryan W. Posner, Chris Ligtenberg, Dinesh C. Mathew, Peteris K. Augenbergs, Thomas W. Wilson, JR., Victor H. Yin
Принадлежит: Individual

An electronic device housing may have upper and lower portions that are attached with a hinge. At least one portion of the housing may have a rear planar surface and peripheral sidewalls having edges. A display module may be mounted in the housing. The display module may have glass layers such as a color filter glass layer and a thin-film transistor substrate. The color filter glass layer may serve as the outermost glass layer in the display module. The edges of the display module may be aligned with the edges of the peripheral housing sidewalls to create the appearance of a borderless display for the electronic device. The display module may be provided with an opening that allows a camera or other electronic components to receive light. Traces may be provided on the underside of the thin-film transistor substrate to serve as signal paths for the electrical components.

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Номер записи: 32
26-01-2012 дата публикации

Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same

Номер: US20120021558A1
Автор: Kazunari Kurita
Принадлежит: Sumco Corp

There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. Silicon substrate contains solid-soluted carbon having a concentration of 1×10 16 -1×10 17 atoms/cm 3 and solid-soluted oxygen having a concentration of 1.4×10 18 -1.6×10 18 atoms/cm 3 .

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Номер записи: 33
26-01-2012 дата публикации

Methods Of Forming An Array Of Memory Cells, Methods Of Forming A Plurality Of Field Effect Transistors, Methods Of Forming Source/Drain Regions And Isolation Trenches, And Methods Of Forming A Series Of Spaced Trenches Into A Substrate

Номер: US20120021573A1
Автор: Neal L. Davis, Ranjan Khurana, Richard Housley
Принадлежит: Micron Technology Inc

A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.

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Номер записи: 34
26-01-2012 дата публикации

Array configuration and readout scheme

Номер: US20120022795A1
Автор: Jeremy JORDAN, Kim Johnson, Mark Milgrew, Peter Levine
Принадлежит: Life Technologies Corp

The described embodiments may provide a chemical detection circuit that may comprise a plurality of first output circuits at a first side and a plurality of second output circuits at a second side of the chemical detection circuit. The chemical detection circuit may further comprise a plurality of tiles of pixels each placed between respective pairs of first and second output circuits. Each tile may include four quadrants of pixels. Each quadrant may have columns with designated first columns interleaved with second columns. Each first column may be coupled to a respective first output circuit in first and second quadrants, and to a respective second output circuit in third and fourth quadrants. Each second column may be coupled to a respective second output circuit in first and second quadrants, and to a respective first output circuit in third and fourth quadrants.

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Номер записи: 35
02-02-2012 дата публикации

Temperature monitoring in a semiconductor device by using a pn junction based on silicon/germanium materials

Номер: US20120025276A1
Автор: Anthony Mowry, Gert Burbach, Markus Forsberg, Rolf Stephan
Принадлежит: Advanced Micro Devices Inc

By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a process flow for incorporating a silicon/germanium material into P-channel transistors of sophisticated semiconductor devices. Hence, temperature control efficiency may be increased with reduced die area consumption.

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Номер записи: 36
02-02-2012 дата публикации

Raised Source/Drain Field Effect Transistor

Номер: US20120025282A1
Автор: Ali Khakifirooz, Bruce B. Doris, Kangguo Cheng, Pranita Kulkarni
Принадлежит: International Business Machines Corp

In one exemplary embodiment of the invention, a semiconductor structure includes: a substrate; and a plurality of devices at least partially overlying the substrate, where the plurality of devices include a first device coupled to a second device via a first raised source/drain having a first length, where the first device is further coupled to a second raised source/drain having a second length, where the first device comprises a transistor, where the first raised source/drain and the second raised source/drain at least partially overly the substrate, where the second raised source/drain comprises a terminal electrical contact, where the second length is greater than the first length.

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Номер записи: 37
02-02-2012 дата публикации

System with logic and embedded mim capacitor

Номер: US20120025285A1
Автор: Jeong Y. Choi
Принадлежит: Mosys Inc

An embedded memory system includes an array of random access memory (RAM) cells, on the same substrate as an array of logic transistors. Each RAM cell includes an access transistor and a capacitor structure. The capacitor structure is fabricated by forming a metal-insulator-metal capacitor in a dielectric layer. The embedded RAM system includes fewer metal layers in the logic region than in the memory region

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Номер записи: 38
02-02-2012 дата публикации

Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer

Номер: US20120025345A1
Автор: Alan B. Botula, Alvin J. Joseph, James A. Slinkman, Randy L. Wolf
Принадлежит: International Business Machines Corp

A method, integrated circuit and design structure includes a silicon substrate layer having trench structures and an ion impurity implant. An insulator layer is positioned on and contacts the silicon substrate layer. The insulator layer fills the trench structures. A circuitry layer is positioned on and contacts the buried insulator layer. The circuitry layer comprises groups of active circuits separated by passive structures. The trench structures are positioned between the groups of active circuits when the integrated circuit structure is viewed from the top view. Thus, the trench structures are below the passive structures and are not below the groups of circuits when the integrated circuit structure is viewed from the top view.

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Номер записи: 39
02-02-2012 дата публикации

Method of fabricating display device

Номер: US20120028391A1
Автор: Koichiro Tanaka
Принадлежит: Semiconductor Energy Laboratory Co Ltd

To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used.

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Номер записи: 40
02-02-2012 дата публикации

Image sensor and method for fabricating same

Номер: US20120028394A1
Автор: Youn-Sub Lim
Принадлежит: MagnaChip Semiconductor Ltd

An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode.

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Номер записи: 41
09-02-2012 дата публикации

Image engine with integrated circuit structure for indicia reading terminal

Номер: US20120031977A1
Автор: Edward C. Bremer, Kevin D. Bower, William H. Havens, Ynjiun Paul Wang
Принадлежит: HAND HELD PRODUCTS INC

Embodiments of the present invention comprise an image engine constructed as an IC structure that has one or more active regions for illuminating, imaging, and decoding a decodable indicia. In one embodiment of the image engine, the IC structure can comprise an imaging region, an aiming region, and an illumination region, all disposed on a single, contiguous substrate. The resultant constructed embodiment can fit within a form factor, wherein the form factor is less than about 500 mm 3 .

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Номер записи: 42
09-02-2012 дата публикации

Sensing Devices and Manufacturing Methods Therefor

Номер: US20120032066A1
Автор: Ping-Hung Yin, Shuenn-Ren Hsiao
Принадлежит: Himax Imaging Inc

A sensing device is provided. The sensing device includes a sensing pixel array and a memory unit. The sensing pixel array is formed in a substrate and includes a plurality of pixels for sensing light. The substrate has a first side and a second side opposite to the first side and receives the light through the first side for sensing the light. The memory unit is formed on the second side of the substrate for memorization.

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Номер записи: 43
09-02-2012 дата публикации

Non-radiatively pumped wavelength converter

Номер: US20120032142A1
Автор: Catherine A. Leatherdale, Craig R. Schardt
Принадлежит: 3M Innovative Properties Co

A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.

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Номер записи: 44
09-02-2012 дата публикации

Display device and manufacturing method of display device

Номер: US20120032159A1
Автор: Gen Fujii, Kengo Akimoto, Masaharu Nagai, Masayuki Sakakura, Shunpei Yamazaki, Tetsuji Yamaguchi, Yutaka Matsuda
Принадлежит: Semiconductor Energy Laboratory Co Ltd

It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

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Номер записи: 45
09-02-2012 дата публикации

Method for fabrication of a semiconductor device and structure

Номер: US20120032294A1
Автор: Brian Cronquist, Deepak C. Sekar, Israel Beinglass, Jan Lodewijk de Jong, Zvi Or-Bach
Принадлежит: Monolithic 3D Inc

A semiconductor device comprising: a first single crystal silicon layer comprising first transistors, first alignment mark, and at least one metal layer overlying said first single crystal silicon layer, wherein said at least one metal layer comprises copper or aluminum more than other materials; a second layer overlying said at least one metal layer, said second layer comprising second transistors, second alignment mark, and a through via through said second layer, wherein said through via is a part of a connection path between said first transistors and said second transistors, wherein alignment of said through via is based on said first alignment mark and said second alignment mark and effected by a distance between said first alignment mark and said second alignment mark.

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Номер записи: 46
09-02-2012 дата публикации

Semiconductor integrated device

Номер: US20120032730A1
Автор: Jun Koyama
Принадлежит: Semiconductor Energy Laboratory Co Ltd

To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved.

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Номер записи: 47
09-02-2012 дата публикации

Semiconductor Device, and Display Device and Electronic Device Utilizing the Same

Номер: US20120032943A1
Автор: Hajime Kimura, Yutaka Shionoiri
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.

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Номер записи: 48
09-02-2012 дата публикации

Cmos image sensor having wide dynamic range and sensing method thereof

Номер: US20120033118A1
Автор: Jawoong Lee, Jong Beom Choi, Jun Hee Cho
Принадлежит: ZEEANN CO Ltd

Disclosed are a CMOS image sensor having a wide dynamic range and a sensing method thereof. Each unit pixel of the CMOS image sensor of the present invention includes multiple processing units, so that one shuttering section for the image generation of one image frame can be divided into multiple sections to separately shutter and sample the divided sections by each processing unit. Thus, the image sensor of the present invention enables many shuttering actions to be performed in the multiple processing units, respectively, and the multiple processing units to separately sample each floating diffusion voltage caused by the shuttering actions, thereby realizing a wide dynamic range.

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Номер записи: 49
09-02-2012 дата публикации

Solid-state imaging device, manufacturing method thereof, and electronic apparatus

Номер: US20120033119A1
Автор: Takekazu Shinohara
Принадлежит: Sony Corp

A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

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Номер записи: 50
09-02-2012 дата публикации

Solid-state imaging device and electronic camera

Номер: US20120033120A1
Автор: Hiroshi Ueda, Kenji Nakamura, Kyoichi Miyazaki
Принадлежит: Panasonic Corp

An object of the present invention is to provide a highly-accurate AF without adding a mechanism of the camera or increasing the power consumption. A solid-state imaging device according to an aspect of the present invention includes: a plurality of photoelectric conversion units configured to convert incident light into electronic signals, the photoelectric conversion units being arranged in a two dimensional array, the photoelectric conversion units including a plurality of first photoelectric conversion units and a plurality of second photoelectric conversion units; a plurality of first microlenses each of which is disposed to cover a corresponding one of said first photoelectric conversion units; and a second microlens disposed to cover the second photoelectric conversion units, in which at least two of the second photoelectric conversion units are located at respective positions which are offset from an optical axis of the second microlens, in mutually different directions.

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Номер записи: 51
09-02-2012 дата публикации

Methods of fabricating semiconductor devices having various isolation regions

Номер: US20120034757A1
Автор: Eunkee Hong, Gil-heyun Choi, Ha-Young YI, Hong-Gun Kim, Jun-Won Lee, Yong-Soon Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench.

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Номер записи: 52
16-02-2012 дата публикации

Contacts for Nanowire Field Effect Transistors

Номер: US20120037880A1
Автор: Guy M. Cohen, Jeffrey W. Sleight, Sarunya Bangsaruntip, Shreesh Narasimha
Принадлежит: International Business Machines Corp

A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire over a semiconductor substrate, forming a gate stack around a portion of the nanowire, forming a capping layer on the gate stack, forming a spacer adjacent to sidewalls of the gate stack and around portions of nanowire extending from the gate stack, forming a hardmask layer on the capping layer and the first spacer, forming a metallic layer over the exposed portions of the device, depositing a conductive material over the metallic layer, removing the hardmask layer from the gate stack, and removing portions of the conductive material to define a source region contact and a drain region contact.

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Номер записи: 53
16-02-2012 дата публикации

Method for molecular adhesion bonding at low pressure

Номер: US20120038027A1
Автор: Marcel Broekaart
Принадлежит: Soitec SA

The present invention relates to a method for molecular adhesion bonding between at least a first wafer and a second wafer involving aligning the first and second wafers, placing the first and second wafers in an environment having a first pressure (P 1 ) greater than a predetermined threshold pressure; bringing the first wafer and the second wafer into alignment and contact; and initiating the propagation of a bonding wave between the first and second wafer after the wafers are aligned and in contact by reducing the pressure within the environment to a second pressure (P 2 ) below the threshold pressure. The invention also relates to the three-dimensional composite structure that is obtained by the described method of adhesion bonding.

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Номер записи: 54
23-02-2012 дата публикации

Semiconductor device, method for manufacturing same, and display device

Номер: US20120043540A1
Автор: Tomohiro Kimura
Принадлежит: Individual

The present invention provides a semiconductor device capable of suppressing a contact failure due to an increase in contact resistance, a production method of the semiconductor device, and a display device. The present invention provides a semiconductor device which includes a thin-film diode including a crystalline semiconductor layer which includes a cathode region and an anode region, a cathode electrode connected to the cathode region, and an anode electrode connected to the anode region, the thin-film diode, the cathode electrode, and the anode electrode being disposed on a substrate, and which is featured in that the crystalline semiconductor layer includes a first low-impurity-concentration region having an impurity concentration lower than the impurity concentration of the cathode region, in that the first low-impurity-concentration region is arranged adjacent to the cathode region, and in that the cathode electrode is in contact with an area of the cathode region, the area being within 3 μm from the boundary at which the cathode region is in contact with the first low-impurity-concentration region.

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Номер записи: 55
23-02-2012 дата публикации

Organic light-emitting display device and method of manufacturing the same

Номер: US20120043546A1
Автор: Cheol-Ho Park, Jae-Beom Choi, Jae-Hwan Oh, Seong-Hyun Jin, Won-Kyu Lee, Young-Jin Chang
Принадлежит: Samsung Mobile Display Co Ltd

Disclosed is a method of manufacturing an organic light-emitting display device capable of improving efficiency of a laser generator used for crystallization of amorphous silicon. The method crystallizes amorphous silicon selectively to provide an organic light-emitting display device that includes channel area of a pixel contains polycrystalline silicon and storage area of the pixel contains amorphous silicon.

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Номер записи: 56
23-02-2012 дата публикации

Sea-of-fins structure on a semiconductor substrate and method of fabrication

Номер: US20120043597A1
Автор: Chun-Yung Sung, Howard H. Chen, Jack A. Mandelman, Louis C. Hsu
Принадлежит: International Business Machines Corp

A semiconductor device and a method of fabricating a semiconductor device, wherein the method comprises forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is used in customized applications as a customized semiconductor device.

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Номер записи: 57
23-02-2012 дата публикации

Methods of forming memory cells, memory cells, and semiconductor devices

Номер: US20120043611A1
Автор: Chandra V. Mouli, Gurtej S. Sandhu
Принадлежит: Micron Technology Inc

A memory device and method of making the memory device. Memory device may include a storage transistor at a surface of a substrate. The storage transistor comprises a body portion between first and second source/drain regions, wherein the source/drain regions are regions of a first conductivity type. The storage transistor also comprises a gate structure that wraps at least partially around the body portion in at least two spatial planes. A bit line is connected to the first source/drain region and a word line is connected to the gate structure.

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Номер записи: 58
23-02-2012 дата публикации

Image Sensor Package with Dual Substrates and the Method of the Same

Номер: US20120043635A1
Автор: Wen-Kun Yang
Принадлежит: King Dragon International Inc

The image sensor package with dual substrates comprises a first substrate with a die receiving opening and a plurality of first through hole penetrated through the first substrate; a second substrate with a die opening window and a plurality of second through hole penetrated through the second substrate, formed on the first substrate. A part of the second wiring pattern is coupled to a part of the third wiring pattern; an image die having conductive pads and sensing array received within the die receiving opening and the sensing array being exposed by the die opening window; and a through hole conductive material refilled into the plurality of second through hole, some of the plurality of second through hole coupling to the conductive pads of the image sensor.

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Номер записи: 59
23-02-2012 дата публикации

Solid-state image sensing apparatus

Номер: US20120043636A1
Автор: Keiji Nagata
Принадлежит: Canon Inc

This invention provides a solid-state image sensing apparatus in which a sensor portion that performs photo-electric conversion and plural layers of wiring lines including a signal line for the sensor portion are formed on a semiconductor substrate; which includes an effective pixel portion configured such that light enters the sensor portion, and an optical black portion shielded so that the light does not enter the sensor portion; and which has a light-receiving surface on the back surface side of the semiconductor substrate. The optical black portion includes the sensor portion, a first light-shielding film formed closer to the back surface side of the semiconductor substrate than the sensor portion, and a second light-shielding film formed closer to the front surface side of the semiconductor substrate than the sensor portion.

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Номер записи: 60
23-02-2012 дата публикации

Epitaxy Silicon on Insulator (ESOI)

Номер: US20120043641A1
Автор: Ming-Hua Yu, Pang-Yen Tsai, Tze-Liang Lee
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Methods and structures for semiconductor devices with STI regions in SOI substrates is provided. A semiconductor structure comprises an SOI epitaxy island formed over a substrate. The structure further comprises an STI structure surrounding the SOI island. The STI structure comprises a second epitaxial layer on the substrate, and a second dielectric layer on the second epitaxial layer. A semiconductor fabrication method comprises forming a dielectric layer over a substrate and surrounding a device fabrication region in the substrate with an isolation trench extending through the dielectric layer. The method also includes filling the isolation trench with a first epitaxial layer and forming a second epitaxial layer over the device fabrication region and over the first epitaxial layer. Then a portion of the first epitaxial layer is replaced with an isolation dielectric, and then a device such as a transistor is formed second epitaxial layer within the device fabrication region.

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Номер записи: 61
23-02-2012 дата публикации

Apparatus and method for inspecting internal defect of substrate

Номер: US20120044346A1
Автор: Che-Min Lin, Cheng-Kai Chen, Jen-Ming Chang, Yen-Chun Chou, Yu-Hsi Lee
Принадлежит: Delta Electronics Inc

An apparatus inspects internal defects of substrate, the substrate having an upper surface and a plurality of side surfaces connected with the upper surface. The apparatus includes at least one light source arranged on one of the side surfaces of the substrate and emitting a light beam on the corresponding side surface and into the substrate, the incident angle of the light beam is limited to a first predetermined angle within a range allowing the light beam to transmit in a total internal reflection manner in the substrate; an image capturing module arranged above the substrate to capture the image of the upper surface of the substrate, a light shield mask arranged between the image capturing module and the substrate and shielding an edge portion of the upper surface of the substrate.

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Номер записи: 62
23-02-2012 дата публикации

Image pickup module and camera

Номер: US20120044415A1
Автор: Akiya Nakayama, Koji Tsuduki, Shin Hasegawa, Tadashi Kosaka, Takanori Suzuki, Yasuhiro Matsuki
Принадлежит: Canon Inc

An image pickup module includes a cover member, an image pickup device chip including photodiodes, a fixing member which is arranged around the image pickup device chip and which connects the cover member and the image pickup device chip together, a rewiring substrate arranged on the side opposite to the cover member of the image pickup device chip, connection members for connecting the image pickup device chip with the rewiring substrate, and a space surrounded by the cover member, the image pickup device chip, and the fixing member. The image pickup device chip includes a semiconductor substrate. The semiconductor substrate includes through-hole electrodes penetrating the substrate. When an area corresponding to the fixing member in the orthogonal projection of the image pickup module with respect to the cover module is defined as a fixed area, the through-hole electrodes and the connection members are arranged in the fixed area.

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Номер записи: 63
23-02-2012 дата публикации

Systems and methods for preparing epitaxially textured polycrystalline films

Номер: US20120045191A1
Автор: James S. Im
Принадлежит: Columbia University of New York

The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for making a textured thin film includes providing a precursor film on a substrate, the film includes crystal grains having a surface texture and a non-uniform degree of texture throughout the thickness of the film, wherein at least a portion of the this substrate is transparent to laser irradiation; and irradiating the textured precursor film through the substrate using a pulsed laser crystallization technique at least partially melt the film wherein the irradiated film crystallizes upon cooling to form crystal grains having a uniform degree of texture.

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Номер записи: 64
23-02-2012 дата публикации

Semiconductor Memory Device

Номер: US20120045872A1
Автор: Sang Min Hwang
Принадлежит: Hynix Semiconductor Inc

Disclosed herein is a semiconductor memory device for reducing a junction resistance and increasing amount of current throughout the unit cell. A semiconductor memory device comprises plural unit cells, each coupled to contacts formed in different shape at both sides of a word line in a cell array.

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Номер записи: 65
01-03-2012 дата публикации

Infrared sensor, electronic device, and manufacturing method of infrared sensor

Номер: US20120049067A1
Автор: Hiroshi Sakai, Masatake Takahashi, Yasuhiro Sasaki
Принадлежит: NEC Corp

The present invention aims to reduce a size and improve quality of an infrared sensor. An infrared sensor ( 203 ) according to the present invention includes a substrate ( 202 ) and an infrared detection element ( 201 ). A principal surface of the substrate ( 202 ) includes a convex shape. The infrared detection element ( 201 ) is formed over the principal surface including the convex shape of the substrate ( 202 ). Further, as for the infrared detection element ( 201 ), an entire light-receiving surface includes a planar shape. Then, it can be the small-sized infrared sensor ( 203 ) with improved quality.

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Номер записи: 66
01-03-2012 дата публикации

Electronic device, manufacturing method of electronic device, and sputtering target

Номер: US20120049183A1
Автор: Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate, such as a DC sputtering method or a pulsed DC sputtering method. This film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film. Another portion of the film has a decreased concentration of the added material and a sufficiently high insulating property; therefore, it can be used for a gate insulator of a semiconductor device, or the like.

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Номер записи: 67
01-03-2012 дата публикации

Display device

Номер: US20120049184A1
Автор: Atsushi Umezaki, Hiroyuki Miyake
Принадлежит: Semiconductor Energy Laboratory Co Ltd

To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode of a transistor which easily deteriorates is connected to a wiring to which a high potential is supplied through a first switching transistor and a wiring to which a low potential is supplied through a second switching transistor; a clock signal is input to a gate electrode of the first switching transistor; and an inverted clock signal is input to a gate electrode of the second switching transistor. Thus, the high potential and the low potential are alternately applied to the gate electrode of the transistor which easily deteriorates.

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Номер записи: 68
01-03-2012 дата публикации

Semiconductor device and method of manufacturing the same

Номер: US20120049189A1
Автор: Atsuo Isobe, Hitomi Sato, Keitaro Imai, Kosei Noda, Mizuho IKARASHI, Toshinari Sasaki, Yuta Endo, Yutaka Okazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

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Номер записи: 69
01-03-2012 дата публикации

Array substrate

Номер: US20120049198A1
Автор: Hsi-Ming Chang
Принадлежит: Chunghwa Picture Tubes Ltd

An array substrate includes a substrate, an organic layer, a via hole, an inorganic layer, and a patterned transparent pixel electrode layer. The thin film transistor is disposed on the substrate, and the thin film transistor comprises a drain electrode. The organic material layer covers the substrate and the thin film transistor. The via hole penetrates the organic material layer and exposes the drain electrode. The inorganic material layer covers at least a sidewall of the via hole and a part of the organic material layer, and exposes the drain electrode through the via hole. The patterned transparent pixel electrode layer is disposed on the first inorganic material layer and in the via hole, and the patterned transparent pixel electrode layer contacts the drain electrode.

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Номер записи: 70
01-03-2012 дата публикации

Light emitting device

Номер: US20120049208A1
Автор: Chao Hsing Chen, Chien Fu Shen, Hsin Mao Liu, Schang Jing Hon, Tsun Kai Ko
Принадлежит: Individual

The present disclosure provides a light emitting device, including a serially-connected LED array including a plurality of LED cells on a single substrate, including a first LED cell, a second LED cell, and a serially-connected LED sub-array including at least three LED cells intervening the first and second LED cell, wherein each of the first and second LED cell including a first side and a second side that the first side of the first LED cell and/or the second LED cell neighboring to the LED sub-array, and the second side of the first LED cell neighboring to the second side of the second LED cell; a trench between the second sides of the first and second LED cells; and a protecting structure formed near the trench to prevent the light-emitting device from being damaged near the trench by a surge voltage higher than a normal operating voltage of the light emitting device.

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Номер записи: 71
01-03-2012 дата публикации

High Voltage Semiconductor Devices

Номер: US20120049279A1
Автор: Cornelius Christian Russ, Harald Gossner, Maryam Shojaei Baghini, Mayank Shrivastava, Ramgopal Rao
Принадлежит: INDIAN INSTITUTE OF TECHNOLOGY BOMBAY, INFINEON TECHNOLOGIES AG

In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.

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Номер записи: 72
01-03-2012 дата публикации

Image sensing device

Номер: US20120050599A1
Автор: Hui-Hsuan Chen
Принадлежит: PixArt Imaging Inc

An image sensing device includes a substrate, a color filter layer, a plurality of micro-lenses and a plurality of anti-reflection units. The substrate has a plurality of sensing units, and the color filter layer covers the sensing units. The micro-lenses are disposed on the color filter layer, and the micro-lenses are respectively corresponded to the sensing units. Moreover, the anti-reflection units are respectively disposed on the micro-lenses. Each anti-reflection unit includes a plurality of anti-reflection films stacked on the corresponding micro-lens, and refractive indexes of the two adjacent anti-reflection films are different. The image sensing device has a better image sensing quality.

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Номер записи: 73
01-03-2012 дата публикации

Driving method of semiconductor device

Номер: US20120051116A1
Автор: Hiroki Inoue, Kiyoshi Kato, Shuhei Nagatsuka, Takanori Matsuzaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device with a novel structure and a driving method thereof are provided. A semiconductor device includes a non-volatile memory cell including a writing transistor including an oxide semiconductor, a reading p-channel transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of electric charge is held in the node. In a holding period, the memory cell is brought into a selected state and a source electrode and a drain electrode of the reading transistor are set to the same potential, whereby the electric charge stored in the node is held.

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Номер записи: 74
01-03-2012 дата публикации

Method for designing semiconductor device

Номер: US20120052602A1
Автор: Kaoru Hatano, Satoshi Seo
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device may be designed in the following manner. A stacked layer of a silicon oxide film and an organic film is provided over a substrate, deuterated water is contained in the organic film, and then a conductive film is formed in contact with the organic film. Next, an inert conductive material that does not easily generate a deuterium ion or a deuterium molecule is selected by measuring the amount of deuterium that exists in the silicon oxide film.

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Номер записи: 75
08-03-2012 дата публикации

Pixel array

Номер: US20120056207A1
Автор: Chou-Chin Wu, Chu-Yu Liu, Hui-Ting Hsu, I-Chun Chen, Jen-Wen Wan, Yu-Chieh Kuo
Принадлежит: AU OPTRONICS CORP

A pixel array includes pixel sets. Each pixel set includes a first and second scan lines arranged in parallel on a substrate, a data line not parallel to the first and second scan lines, a first active device electrically connecting the first scan line and the data line, a second active device electrically connecting the second scan line and the data line, a first pixel electrode electrically connecting the first active device, a second pixel electrode electrically connecting the second active device, and an auxiliary electrode pattern that includes a connecting portion and a first and second branch portions. A gap is between the first and second pixel electrodes. The connecting portion underneath the gap between the first and second pixel electrodes partially overlaps the first and second pixel electrodes. The first and second branch portions connect the connecting portion and partially overlap the first and second pixel electrodes, respectively.

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Номер записи: 76
08-03-2012 дата публикации

Semiconductor package and manufacturing method for a semiconductor package as well as optical module

Номер: US20120056292A1
Автор: Masami Suzuki, Masayuki Nagao, Yasuyuki Ito
Принадлежит: Sony Corp

A semiconductor package includes: a supporting substrate; a functioning element and a first joining element formed on a first principal surface of the supporting substrate; a sealing substrate disposed in an opposing relationship to the supporting substrate with the functioning element and the first joining element interposed therebetween; a second joining element provided on a second principal surface of the supporting substrate; a through-electrode provided in and extending through the supporting substrate and adapted to electrically connect the first and second joining elements; and a first electromagnetic shield film coated in an overall area of a side face of the supporting substrate which extends perpendicularly to the first and second principal surfaces.

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Номер записи: 77
08-03-2012 дата публикации

Solid-state imaging element and camera system

Номер: US20120057056A1
Автор: Yusuke Oike
Принадлежит: Sony Corp

A solid-state imaging element includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.

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Номер записи: 78
08-03-2012 дата публикации

Method for producing bonded wafer

Номер: US20120058622A1
Автор: Makoto Kawai, Shoji Akiyama, Yuji Tobisaka
Принадлежит: Shin Etsu Chemical Co Ltd

When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded wafer, with at least the steps of: implanting ions into a donor substrate ( 3 ) from a surface thereof to form an ion-implanted interface ( 5 ); bonding a handle substrate ( 7 ) with a thermal expansion coefficient higher than that of the donor substrate ( 3 ) onto the ion-implanted surface of the donor substrate to provide bonded substrates, subjecting the bonded substrates to a heat treatment to provide an assembly ( 1 ), and delaminating the donor substrate ( 3 ) of the assembly ( 1 ) at the ion-implanted interface wherein the assembly ( 1 ) has been cooled to a temperature not greater than room temperature by a cooling apparatus ( 20 ), so that a donor film is transferred onto the handle substrate ( 7 ).

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Номер записи: 79
15-03-2012 дата публикации

Imaging apparatus and methods

Номер: US20120061567A1
Автор: Anders Ingvar Aberg, Bryan D. Ackland, Clifford A. King, Conor S. Rafferty, Tirunelveli Subramaniam Sriram
Принадлежит: Infrared Newco Inc

Imagers, pixels, and methods of using the same are disclosed for imaging in various spectra, such as visible, near infrared (IR), and short wavelength IR (SWIR). The imager may have an imaging array having pixels of different types. The different types of pixels may detect different ranges of wavelengths in the IR, or the SWIR, spectra. The pixels may include a filter which blocks some wavelengths of radiation in the IR spectrum while passing other wavelengths. The filter may be formed of a semiconductor material, and therefore may be easily integrated with a CMOS pixel using conventional CMOS processing techniques.

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Номер записи: 80
15-03-2012 дата публикации

Semiconductor for sensing infrared radiation and method thereof

Номер: US20120061572A1
Автор: Robert HANNEBAUER
Принадлежит: Hanvision Co Ltd, Lumiense Photonics Inc

The bolometric sensing circuit includes a pixel array comprising pixels, each pixel comprising a sensor configuration to comprise a light receiving portion to convert incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; an output portion to output a common mode voltage that represents a voltage of the sensing portion from which accumulated heat has been removed in response to a heat removing voltage to thermally reset the sensing portion, and output a sensed voltage that represents a voltage of the sensing portion which has accumulated heat for an integration period after being thermally reset; and a processor to subtract the common mode voltage from the sensed voltage to produce a signal voltage that represents a change in resistance of the sensing portion due to the heat accumulated for the integration period.

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Номер записи: 81
15-03-2012 дата публикации

Liquid crystal display device and manufacturing method thereof

Номер: US20120061665A1
Автор: Hiroyuki Miyake, Koji KUSUNOKI, Ryo Arasawa
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A photolithography step and an etching step for forming an island-shaped semiconductor layer is omitted, and a liquid crystal display device is manufactured through the following four photolithography steps: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for forming a source electrode and a drain electrode (including a wiring or the like formed from the same layer), a step for forming a contact hole (including removal of an insulating layer or the like in a region other than the contact hole), and a step for forming a pixel electrode (including a wiring or the like formed from the same layer). In the step of forming the contact hole, a groove portion in which the semiconductor layer is removed is formed, so that formation of parasitic channels is prevented.

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Номер записи: 82
15-03-2012 дата публикации

Semiconductor light-emitting device manufacturing method and semiconductor light-emitting device

Номер: US20120061715A1
Автор: Ji-Hao Liang, Tatsuma Saito
Принадлежит: Stanley Electric Co Ltd

There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers.

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Номер записи: 83
15-03-2012 дата публикации

Display device

Номер: US20120062529A1
Автор: Jun Koyama
Принадлежит: Semiconductor Energy Laboratory Co Ltd

Provided is to secure a data-writing period to a source line and reduce the number of the IC chips used. N image data (e.g., three image data, RGB) are sequentially input to one input terminal. Three switches, three first memory elements, three transfer switches, three second memory elements, and three buffers are connected in parallel to the input terminal. The three switches are turned on respectively. RGB image data are held in the three respective first memory elements. In a selection period of a gate line of an (m−1)-th row, image data of an m-th row are written to the first memory elements. When the three transfer switches are turned on in a selection period of a gate line of an m-th row, the image data are transferred to and held in the second memory elements. Then, the image data are output to each source line through each buffer.

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Номер записи: 84
15-03-2012 дата публикации

Semiconductor memory device

Номер: US20120063206A1
Автор: Kazuma Furutani, Yutaka Shionoiri
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit.

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Номер записи: 85
22-03-2012 дата публикации

Infrared light detector

Номер: US20120068158A1
Автор: Patrick Nickels, Susumu Komiyama
Принадлежит: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of first electronic regions 10 in a connected status is configured such that an electron energy level of excited sub-bands of each of the plurality of first electron regions 10 in a disconnected status is sufficiently higher than a Fermi level of each of second electronic regions 20 opposed to each of the first electronic regions 10 in a conduction channel 120.

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Номер записи: 86
22-03-2012 дата публикации

Manufacturing method of semiconductor device

Номер: US20120068271A1
Автор: Hajime Tokunaga
Принадлежит: Semiconductor Energy Laboratory Co Ltd

After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited with a thickness of 10 nm or more over the semiconductor film while heating the substrate to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, and removing an oxide film on the semiconductor film, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film.

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Номер записи: 87
22-03-2012 дата публикации

Image pickup device and method of arranging image pickup element

Номер: US20120069211A1
Автор: Kazuhide Noguchi, Koji Takemura, Takashi Sakashita
Принадлежит: NEC Space Technologies Ltd

An image pickup apparatus is provided with: an optical system including a lens or a reflecting mirror; an image pickup device having a light-receiving surface on which light rays from the optical system are focused and a plurality of light-receiving pixels which generate charges on the light-receiving surface by the light rays; a bias voltage generation unit which supplies power to the image pickup device; a signal processing unit which processes a signal output from the image pickup device and outputs the processed signal as image data; and a control unit which inputs into the image pickup device a driving clock that controls transmission of the charges generated in the light-receiving pixels of the image pickup device. The image pickup device is bent so that distortion aberration present in the optical system is eliminated.

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Номер записи: 88
22-03-2012 дата публикации

Photoelectric conversion apparatus, imaging system, and photoelectric conversion apparatus manufacturing method

Номер: US20120069228A1
Автор: Hirofumi Totsuka, Satoshi Kato
Принадлежит: Canon Inc

A photoelectric conversion apparatus having a pixel array region and a peripheral region includes a pixel array, a readout unit, an output unit, a plurality of output lines, and a color filter layer which is arranged in the pixel array region and the peripheral region and includes a color filter arranged above the plurality of pixels. The color filter layer extends to surround the output lines when viewed from a direction perpendicular to a surface of a semiconductor substrate, and has an opening arranged above the plurality of output lines. The opening of the color filter layer is filled with gas or an insulator lower in dielectric constant than the color filter.

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Номер записи: 89
22-03-2012 дата публикации

Nonvolatile semiconductor memory device

Номер: US20120069660A1
Автор: Hitoshi Iwai, Shinichi Oosera, Tomoki Higashi
Принадлежит: Toshiba Corp

A nonvolatile semiconductor memory device comprises a plurality of memory blocks, each including a plurality of cell units and each configured as a unit of execution of an erase operation. Each of the cell units comprises a memory string, a first transistor, a second transistor, and a diode. The first transistor has one end connected to one end of the memory string. The second transistor is provided between the other end of the memory string and a second line. The diode is provided between the other end of the first transistor and a first line. The diode comprises a second semiconductor layer of a first conductivity type and a third semiconductor layer of a second conductivity type.

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Номер записи: 90
22-03-2012 дата публикации

Semiconductor device, method of manufacturing thereof, and method of manufacturing base material

Номер: US20120070919A1
Автор: Junya Maruyama, Takuya Tsurume, Toru Takayama, Yumiko Fukumoto, Yuugo Goto
Принадлежит: Semiconductor Energy Laboratory Co Ltd

It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

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Номер записи: 91
22-03-2012 дата публикации

Semiconductor device having decreased contact resistance

Номер: US20120070987A1
Автор: David Wu, Donna Michael, MARK Michael, Zhonghai Shi
Принадлежит: Globalfoundries Inc

Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

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Номер записи: 92
29-03-2012 дата публикации

Image sensor with a gated storage node linked to transfer gate

Номер: US20120074300A1
Автор: Jeffrey A. McKee, Peter P. Altice, Jr.
Принадлежит: Altice Jr Peter P, Mckee Jeffrey A

A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.

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Номер записи: 93
29-03-2012 дата публикации

Digital x-ray detector with increased dynamic range

Номер: US20120074329A1
Автор: Aaron Judy Couture, Douglas Albagli, John Robert Lamberty, Marc Schaepkens, Paul Richard Granfors, Ping Xue, Richard Gordon Cronce
Принадлежит: General Electric Co

In one embodiment, a digital X-ray detector is provided with a plurality of pixel regions. Each pixel region includes a first photodiode having a first area and a second photodiode having a second area equal to or smaller than the first area. The digital X-ray detector also includes a shielding structure that overlies the first and second photodiodes of each pixel region with the shielding structure shielding proportionally less of the first photodiode than of the second photodiode to provide the first photodiode with a first sensitivity and the second photodiode with a second sensitivity lower than the first sensitivity.

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Номер записи: 94
29-03-2012 дата публикации

Light emitting device and electronic device

Номер: US20120074409A1
Автор: Hiroshi Matsumoto, Kunihiro Matsuda
Принадлежит: Casio Computer Co Ltd

A light emitting device includes: a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a light emitting layer provided between the first electrode and the second electrode; a capacitor having a third electrode formed in a position overlapping the light emitting element and an insulating layer provided between the first and third electrodes; a first drive transistor disposed on a first side of the first electrode and having a gate electrode; and a second drive transistor disposed on a second side of the first electrode and having a gate electrode connected to the gate electrode of the first drive transistor via the third electrode.

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Номер записи: 95
29-03-2012 дата публикации

Organic light emitting diode display device and method of manufacturing the same

Номер: US20120074414A1
Автор: Chun-Gi You, Sun Park, Yul-Kyu Lee
Принадлежит: Samsung Mobile Display Co Ltd

An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device comprises: a substrate; an active layer disposed on the substrate; a first insulating layer disposed on the active layer; a gate electrode disposed on the first insulating layer; a pixel electrode disposed on the first insulating layer; source and drain electrodes electrically insulated from the gate electrode and electrically connected to the active layer; an intermediate layer disposed on the pixel electrode, wherein the intermediate layer comprises an organic emission layer; and an opposite electrode disposed on the intermediate layer, wherein the pixel electrode is connected to the source electrode or the drain electrode, wherein the gate electrode comprises a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer that are sequentially stacked, and wherein the second and third conductive layers comprises a first oxidation-reduction potential difference therebetween, and the first and third conductive layers comprises a second oxidation-reduction potential difference therebetween, and the first oxidation-reduction potential difference is less than the second oxidation-reduction potential difference.

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Номер записи: 96
29-03-2012 дата публикации

Source Driver, An Image Display Assembly And An Image Display Apparatus

Номер: US20120075268A1
Автор: Hee-Seok Lee, Keung-Beum Kim, Ye-Chung Chung, Yun-seok Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An image display panel assembly includes a flexible printed circuit (FPC), an image display panel, a gate driver integrated circuit (IC) package, and a source driver IC package. The FPC is configured to receive gate and source driving signals. The image display panel is electrically connected to the FPC, and includes a gate driving signal transfer pattern along a first edge of the image display panel, a source driving signal transfer pattern along a second edge adjacent to the first end, and a plurality of pixels. The gate driver integrated circuit (IC) package is configured to receive the gate driving signal through the gate driving signal transfer pattern and provide the gate driving signal to the plurality of pixels. The source driver IC package is configured to receive the source driving signal through the source driving signal transfer pattern and provide the source driving signal to the plurality of pixels.

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Номер записи: 97
29-03-2012 дата публикации

Photoelectric conversion device and method for producing photoelectric conversion device

Номер: US20120077300A1
Автор: Sakae Hashimoto
Принадлежит: Canon Inc

A manufacturing method forms a photoelectric conversion device having a photoreceiving portion provided in a substrate and an interlayer film arranged over the substrate. The method includes forming a layer of a lower etching rate rather than the interlayer film so that the layer of the lower etching rate covers a whole surface of the photoreceiving portion, forming the interlayer film over the layer of the lower etching rate, etching a portion of the interlayer film corresponding to the photoreceiving portion to form a hole penetrating through the interlayer film and reaching the layer of the lower etching rate, and disposing in the hole a material of a higher refractive index rather than the interlayer film.

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Номер записи: 98
29-03-2012 дата публикации

Method for forming impurity layer, exposure mask therefore and method for producing solid-state imaging device

Номер: US20120077304A1
Автор: Ken Tomita, Yoshihiro Obara
Принадлежит: Toshiba Corp

A method for forming an impurity layer, includes forming a resist material 16 on a surface portion of a semiconductor substrate 15 ; exposing the resist material using a grating mask 10 comprising a light transmission region 11 including a plurality of unit light transmission regions 14 being arranged two-dimensionally, each being composed of a plurality of minute partial sections 13 A to 13 D having different transmittance; forming a resist layer 18 on the surface of the semiconductor substrate 15 by developing the exposed resist material, the resist layer including a thin film region 17 having a film thickness corresponding to the transmittance of the light transmission region; implanting ions to the semiconductor substrate 15 via the thin film region; and diffusing ion groups 21 A′, 21 B′, 21 C′, and 21 D′ that are implanted at the same depth such that the ion groups are coupled in a lateral direction.

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Номер записи: 99
05-04-2012 дата публикации

Photoelectric conversion element, production method thereof, photosensor, imaging device and their driving method

Номер: US20120080585A1
Автор: Eiji Fukuzaki, Kimiatsu Nomura
Принадлежит: Fujifilm Corp

To provide a photoelectric conversion element capable of functioning as a photoelectric conversion element when a compound having a specific structure is applied to the photoelectric conversion element, causing the element to exhibit a low dark current, and reducing the range of increase in the dark current even when the element is heat-treated, and an imaging device equipped with such a photoelectric conversion element. A photoelectric conversion element having a photoelectric conversion film which is sandwiched between a transparent electrically conductive film and an electrically conductive film and contains a photoelectric conversion layer and an electron blocking layer, wherein the electron blocking layer contains a compound having, as a substituent, a substituted amino group containing three or more ring structures.

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Номер записи: 100