СПОСОБ ЗАЩИТЫ ОПТИКО-ЭЛЕКТРОННОГО СРЕДСТВА ОТ ЛАЗЕРНОГО ВОЗДЕЙСТВИЯ

Изобретение относится к области защиты оптико-электронных средств (ОЭС) от мощных оптических излучений. Сущность способа защиты ОЭС от лазерного воздействия заключается в приеме оптического излучения ОЭС, делении падающего оптического излучения на два потока в энергетической пропорции Р1=К3Р2 и Р1>>Р2, где Р1 - мощность первого потока, Р2 - мощность второго потока, К3 - коэффициент пропорциональности, задержке первого потока относительно второго потока на заданное время tзад, измерении мощности второго потока Р2 и определении мощности первого потока, как Р1=К3Р2, сравнении его значения Р1 с пороговым значением Рпор, обработке при Р1<Рпор оптического излучения первого потока ОЭС, перекрытии при Р1 ≥ Рпор первого потока за время t Подробнее

КОМПОЗИЦИЯ КРАСКИ ДЛЯ ВПЕЧАТЫВАНИЯ, СПОСОБ ВПЕЧАТЫВАНИЯ, СВЕТОВОЕ УСТРОЙСТВО, ОПТИЧЕСКИЙ ДАТЧИК И ФОТОЭЛЕКТРИЧЕСКОЕ УСТРОЙСТВО С ОПТИЧЕСКИМ ЭЛЕМЕНТОМ

Изобретение относится к композиции краски для впечатывания, пригодной для впечатывания в структурированную поверхность эластомерного штампа. Композиция краски для впечатывания содержит наночастицы оксида переходного металла. Композиция содержит полярный растворитель, выбранный, по меньшей мере, из одного из воды и метанола, полимеризующийся материал, растворенный и/или диспергированный в полярном растворителе, при этом полимеризующийся материал содержит частицы оксида переходного металла, формирующие, по меньшей мере, 80% масс. от совокупной массы полимеризуемого содержимого, причем полимеризующийся материал формирует 2-25% масс. при расчете на совокупную массу композиции краски для впечатывания и ингибитор полимеризации. При этом ингибитор полимеризации выбран из ингибитора полимеризации формулы 1, ингибитора полимеризации формулы 2, ингибитора полимеризации формулы 3, или ингибиторов полимеризации формулы 1 в сочетании с ингибитором полимеризации формулы 3. Ингибитор полимеризации формулы ...

СПОСОБ ЗАЩИТЫ ОПТИКО-ЭЛЕКТРОННОГО СРЕДСТВА ОТ ВОЗДЕЙСТВИЯ МОЩНОГО ИМПУЛЬСНОГО ЛАЗЕРНОГО ИЗЛУЧЕНИЯ

Изобретение относится к области защиты оптико-электронных средств (ОЭС) от мощных оптических излучений. Способ основан на пропускании лазерных импульсов через защитный элемент со значением лучевой стойкости меньшим значения минимальной лучевой стойкости элементов ОЭС и защите ОЭС посредством разрушения защитного элемента ОЭС при воздействии последовательности лазерных импульсов. При этом определяют начальный момент времени tнЗЭвоздействия последовательности лазерных импульсов на защитный элемент и начальный момент времени tpЗЭразрушения защитного элемента, вычисляют интервал времени Δt между tнЗЭи tpЗЭ, как Δt=tpЗЭ-tнЗЭ, определяют после разрушения защитного элемента начальный момент времени tнУЭпоследующего воздействия последовательности лазерных импульсов на элемент из состава ОЭС с минимальным значением лучевой стойкости и ограничивают длительность последовательности лазерных импульсов от момента времени tнУЭдо момента времени tнУЭ+Δt. Технический результат заключается в повышении эффективности ...

ЭЛЕМЕНТ ФОТОЭЛЕКТРИЧЕСКОГО ПРЕОБРАЗОВАНИЯ

... 1. Элемент фотоэлектрического преобразования, содержащий:слой фотоэлектрического преобразования; ифотонный кристалл, предусмотренный внутри слоя фотоэлектрического преобразования таким образом, чтобы иметь фотонную запрещенную зону, причем фотонный кристалл сконструирован так, чтобы столбчатые среды, чей показатель преломления меньше, чем показатель преломления среды слоя фотоэлектрического преобразования, были периодически предусмотрены внутри среды слоя фотоэлектрического преобразования, и были предусмотрены дефекты, где не предусмотрены столбчатые среды, для того чтобы обеспечивать уровень дефекта в фотонной запрещенной зоне,когда длиной волны резонансного пика, соответствующего уровню дефекта является λ, столбчатые среды предусмотрены двумерным образом с шагом не менее чем λ/7 и не более чем λ/2, по отношению к длине волны λ, иудовлетворено отношение 0,2 Q≤Q≤5,4 Q,при этом, Qявляется значением Q, представляющим величину эффекта резонанса, произведенного связью между фотонным кристаллом ...

Lichtdetektor

Ein Fotodetektor 1A umfasst ein optisches Element 10A zur Erzeugung einer elektrischen Feldkomponente in einer vorbestimmten Richtung, wenn Licht entlang der vorbestimmten Richtung darauf einfällt, wobei das optische Element 10A eine Struktur aufweist, die erste Gebiete und zweite Gebiete, die mit Bezug auf die ersten Gebiete entlang einer Ebene senkrecht zu der vorbestimmten Richtung in regelmäßigen Abständen angeordnet sind, umfasst; und eine Halbleiterschicht 40, die in Bezug auf das optische Element 10A auf der anderen Seite gegenüberliegend von einer Seite in der vorbestimmten Richtung angeordnet ist, und die einen Halbleitermehrschichtkörper 42 zur Erzeugung eines Stroms entsprechend der durch das optische Element erzeugten elektrischen Feldkomponente in der vorbestimmten Richtung aufweist; wobei jedes Endteil auf der anderen Seite der zweiten Gebiete näher an der anderen Seite angeordnet ist als jedes Endteil auf der anderen Seite der ersten Gebiete; und wobei jedes erste Gebiet ...

Optische Halbleitervorrichtung

Eine Aufgabe der vorliegenden Erfindung besteht darin, eine lichtbehandelnde optische Halbleitervorrichtung zu erreichen, die die Anzahl an deren Komponenten und die Anzahl an deren Herstellungsschritten reduzieren kann und verkleinert werden kann. Eine optische Halbleitervorrichtung (50) der Erfindung umfasst: ein Halbleitersubstrat (11); eine optische Kommunikationseinheit, die auf dem Halbleitersubstrat (11) vorgesehen ist, als lichtempfangende Einheit (12) zum Empfangen eines optischen Signals (8a, 8b) oder lichtemittierende Einheit (91) zum Emittieren eines optischen Signals (9a, 9b); einen Zwischenschichtfilm (31), der das Halbleitersubstrat (11) und die optische Kommunikationseinheit bedeckt; eine Fresnel-Linse (61), durch die das optische Signal hindurchgeht, die auf einer planarisierten Oberfläche des Zwischenschichtfilms (31) vorgesehen ist, die auf dessen vom Halbleitersubstrat (11) abgewandten Seite gelegen ist; und einen Schutzfilm (81), der die Fresnel-Linse (61) und den Zwischenschichtfilm ...

FOTOELEKTRISCHER WANDLER UND FESTKÖRPER-BILDGEBUNGSVORRICHTUNG

Ein fotoelektrischer Wandler gemäß einer Ausführungsform der vorliegenden Offenbarung umfasst: eine organische fotoelektrische Umwandlungssektion; eine anorganische fotoelektrische Umwandlungssektion; und einen optischen Filter. Die organische fotoelektrische Umwandlungssektion umfasst eine erste Elektrode, eine zweite Elektrode und eine organische fotoelektrische Umwandlungsschicht. Die erste Elektrode umfasst eine Elektrode und eine weitere Elektrode. Die zweite Elektrode ist so angeordnet, dass sie der ersten Elektrode gegenüberliegt. Die organische fotoelektrische Umwandlungsschicht ist zwischen der ersten Elektrode und der zweiten Elektrode angeordnet und ist mit der einen Elektrode elektrisch gekoppelt. Die organische fotoelektrische Umwandlungsschicht und die andere Elektrode sind mit einer Isolierungsschicht dazwischen vorgesehen. Die anorganische fotoelektrische Umwandlungssektion weist die zwischen der anorganischen fotoelektrischen Umwandlungssektion und der organischen fotoelektrischen ...

Optoelektronisches Halbleiterbauteil

In mindestens einer Ausführungsform des optoelektronischen Halbleiterbauteils (1) umfasst dieses einen Träger (2) sowie mindestens einen optoelektronischen Halbleiterchip (3), der an einer Trägeroberseite (20) angebracht ist. Weiterhin beinhaltet das Halbleiterbauteil (1) mindestens einen Bonddraht (4), über den der Halbleiterchip (3) elektrisch kontaktiert ist, sowie mindestens einen Abdeckkörper (5), der auf einer Strahlungshauptseite (30) angebracht ist und der den Bonddraht (4) überragt. Zumindest eine reflektierende Vergussmasse (6) umgibt den Halbleiterchip (3) in lateraler Richtung und reicht mindestens bis zu der Strahlungshauptseite (30) des Halbleiterchips (3). Der Bonddraht (4) ist vollständig von der reflektierenden Vergussmasse (6) oder vollständig von der reflektierenden Vergussmasse (6) zusammen mit dem Abdeckkörper (5) überdeckt.

Verfahren zur Herstellung mindestens eines strahlungsemittierenden und/oder -empfangenden Halbleiterbauteils und Halbleiterbauteil

Es wird ein Verfahren zur Herstellung mindestens eines strahlungsemittierenden und/oder -empfangenden Halbleiterbauteils (100) angegeben. Bei einem Verfahrensschritt wird ein Trägerkörper (1) mit einer Montagefläche (101) bereitgestellt. Bei einen weiteren Verfahrensschritt wird ein Barriererahmen (6) auf der Montagefläche (101) ausgebildet, derart dass der Barriererahmen (6) einen Montagebereich (110) der Montagefläche (101) lateral umschließt. Bei einem weiteren Verfahrensschritt wird ein strahlungsemittierender und/oder -empfangender Halbleiterchip (4) innerhalb des Montagebereichs (110) auf der Montagefläche (101) montiert. Der Halbleiterchip (4) wird mit einem flüssigen Linsenmaterial vergossen, wobei das Linsenmaterial (7) innerhalb des Montagebereichs (110) auf die Montagefläche (101) aufgebracht wird. Das Linsenmaterial (7) wird gehärtet. Dabei sind die Montagefläche (101), der Barriererahmen (6) und das Linsenmaterial (7) derart aneinander angepasst, dass die Montagefläche (101 ...

Optical element

Pixel-level optically transitioning filter elements for detector devices

Improved devices and methods for absorbing light

Compact image sensor module

An image sensor module comprises a substrate 50, a photosensitive chip 52, a lens holder 54, and a lens barrel 56. The photosensitive chip 52 is mounted on the substrate 50 and is electrically connected to electrodes 62 by wires 66. The lens holder 54 has an opening formed with an internal thread 72 and is adhered to the substrate 50 by glue 76. The lower end of the opening is tapered by a breach 74 so that the internal diameter of the opening is wider at the lower end than at the upper end. The lens barrel 56 has an external thread 84 which is screwed to the internal thread 72 of the lens holder 54.

Infrared sensor and method for manufacturing infrared sensor

Image sensor

The sensor includes a cascaded light guide that is located within an opening of the insulator and extends above the insulator such that a portion of the cascaded light guide has an air interface. The air interface improves the internal reflection of the cascaded light guide. The cascaded light guide may include a self-aligned color filter having air-gaps between adjacent color filters. The width of the gap t is 0.45/ngap (where ngap is the refractive index of the material within the gap).The footprint B of the light guide is within the footprint of the footprint A of the colour filter. Additionally, an anti-reflection stack is interposed between the substrate and the light guide to reduce backward reflection from the image sensor. Two pixels of having different color filters may have a difference in the thickness of an anti-reflection film within the anti-reflection stack. These characteristics of the light guide eliminate the need for a microlens.

III-V / SILICON OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THEREOF

A PHOTOVOLTAIC ELEMENT WITH AN INCLUDED RESONATOR

A photovoltaic element with an include resonator

A photovoltaic element with an include resonator

A photovoltaic element with an include resonator

LIGHT-DETECTING DEVICE

SEMICONDUCTOR ARRANGEMENT AND OPTO-ELECTRONIC PLATE

Optical structure for solar applications and manufacturing method

An thin and flat reflector solution is provided comprising an entirely flat, planar base element (106, 206); and an at least one flat, planar carrier element (104, 204) provided with a plurality of cavities (110, 210) arranged into an at least one pattern, wherein the carrier element(s) (104, 204) and optionally the base element (106, 206) are substantially optically transparent, wherein said at least one carrier element (104, 204) is laminated together with a base element (106, 206) such, that an at least one embedded, optically functional cavity pattern (110, 210) is established at an interface between the elements, and wherein the optical structure (100, 200) is rendered optically functional by adjusting cavity (110, 210) profiles within each said embedded pattern and/or within each said carrier element (104, 204), wherein an optical function is selected from light reflection, light refraction and light redirection.

METHOD OF MANUFACTURING AN IMAGE SENSOR AND IMAGE SENSOR

LOW COST ELECTRONIC CAMERA MADE WITH INTEGRATED CIRCUIT TECHNOLOGY

L'invention concerne les caméras électroniques de visualisation d'images lumineuses. La caméra (40) comporte un capteur électronique (42) d'images ayant une face active (79) ayant un arrangement de pixels photosensibles formant une surface photosensible (44), des conducteurs électriques sur la face active et une face libre (102) opposée à la face active, un bloc optique (46) comportant au moins une lentille de focalisation (52) des images lumineuses sur la surface photosensible du capteur. Le bloc optique de la caméra est solidaire mécaniquement du capteur et pour assurer une focalisation centrée des images lumineuses sur la surface photosensible du capteur, au moins deux surfaces de positionnement du bloc optique (72, 74) et du capteur (79) sont en contact mécanique direct. Applications: caméras électroniques à faible coût pour micro-ordinateur, téléphones portables appareils photo- numériques.

OPTOELECTRONIC DEVICE WITH INTEGRATED WAVELENGTH FILTERING

Un dispositif optoélectronique comprend des moyens de filtrage (3) propres à transmettre une partie spectrale choisie d'ondes lumineuses et réfléchir une partie spectrale complémentaire, placés entre des moyens (4) pour réfléchir la partie spectrale choisie vers les moyens de filtrage, et des moyens de conversion (1) pour transmettre aux moyens de filtrage les ondes lumineuses à filtrer. Les moyens de conversion sont à une première distance (d1) des moyens de filtrage, choisie de sorte que les ondes qu'ils leur transmettent et la partie spectrale complémentaire réfléchie créent une première onde stationnaire dont le champ électrique associé présente un noeud dans les moyens de conversion (1), et à une seconde distance (d2) des moyens de réflexion choisie de sorte que la partie spectrale choisie et la partie spectrale choisie et réfléchie créent une seconde onde stationnaire dont le champ électrique associé présente un ventre dans les moyens de conversion.

SEMICONDUCTOR LIGHT-RECEIVING MODULE CAPABLE OF CONVERTING LIGHT INTO CURRENT EFFICIENTLY AT LIGHT ABSORBING LAYER

A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light- receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

CONVERSION OF HIGH-ENERGY PHOTONS INTO ELECTRICITY

Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to take advantage of the emission of a large multiplicity of electrons by a single high-energy photon via a cascade of Auger electron emissions. In one embodiment, a high-energy photon converter preferably includes a linearly layered nanometric-scaled wafer made up of layers of a first material sandwiched between layers of a second material having an atomic charge number differing from the atomic charge number of the first material. In other embodiments, the nanometric-scaled layers are configured in a tubular or shell-like configuration and/or include layers of a third insulator material.

OPTICAL COUPLER FOR TRANSMISSION AND RECEPTION OVER OPTICAL FIBRE

An optical coupler allowing contemporaneous transmission and reception of two light signals through the same optical fibre by introducing very low attenuations, owing to the use of a large surface photodetector, whose centre is traversed by a microlens.

SEMICONDUCTOR PHOTODETECTION DEVICE

A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.

SEMICONDUCTOR LIGHT-RECEIVING MODULE CAPABLE OF CONVERTING LIGHT INTO CURRENT EFFICIENTLY AT LIGHT ABSORBING LAYER

A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light- receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

UNIVERSAL BROADBAND PHOTODETECTOR DESIGN AND FABRICATION PROCESS

A broad-spectral-bandwidth photodetector designed for use with all types of optical fibers used in different avionics networks and sensors and a process for fabricating such photodetectors. A Schottky barrier photodetector is provided that includes germanium, which has a broad spectral response to light in the ultraviolet to near-infrared range (220 to 1600 nm). The provision of a photodetector having a broad spectral response avoids the use of multiple different types of photodetectors and receivers in an avionics platform with different optical fiber networks and sensors.

HIGH INFORMATION CONTENT IMAGING USING MIE PHOTO SENSORS

A Mie photo sensor is described. A Mie photo sensor is configured to leverage Mie scattering to implement a photo sensor having a resonance. The resonance is based on various physical and material properties of the Mie photo sensor. In an example, a Mie photo sensor includes a layer of semiconductor material with one or more mesas. Each mesa of semiconductor material may include a scattering center. The scattering center is formed by the semiconductor material of the mesa being at least partially surround by a material with a different refractive index than the semiconductor material. The abutting refractive index materials create an interface that forms a scattering center and localizes the generation of free carriers during Mie resonance. One or more electrical contacts may be made to the mesa to measure the electrical properties of the mesa.

INTEGRATED-CIRCUIT TECHNOLOGY PHOTOSENSITIVE SENSOR

L'invention concerne les capteurs photosensibles, notamment les capteurs électroniques d'images en technologie des circuits intégrés CMOS. Le capteur (40) comporte un substrat (42) ayant un réseau de pixels (44) formant une surface photosensible recevant des rayons lumineux (r1, r2, r3, r4, r5, r6) et dans le trajet des rayons lumineux, une couche holographique (48) ayant un hologramme enregistré, la couche holographique ayant une fonction optique correspondant à l'inverse d'une fonction de diffusion spatiale de manière à rapprocher de la normale à la surface photosensible, les rayons lumineux arrivant sur la couche sous des incidences obliques dispersées. Application: caméras numériques faible coût, capteurs optiques.

PACKAGE FOR OPTOELECTRONIC DEVICE ON WAFER LEVEL AND ASSOCIATED METHODS

An optical apparatus includes a mount substrate (10) an optoelectronic device on the mount substrate (10), a spacer substrate (20), and a sealer substrate (30). The mount substrate (10), the spacer substrate (20) and the sealer substrate (30) are vertically stacked and hermetically sealing the optoelectronic device. An external electrical contact for the optoelectronic device is provided outside the sealing. At least part of the optical apparatus may be made on a wafer level. The wafer is then separated to form a plurality of optical apparatuses. A passive optical element may be provided on the sealer substrate or on another substrate stacked and secured thereto.

METAL-INSULATOR-SEMICONDUCTOR DEVICES BASED ON SURFACE PLASMON POLARITONS

Apparatus and techniques are presented such as can be used for electro-optic modulation and detection or other applications. For example, an optical metal grating is disposed on a thin metal film to couple light from broadside to the metal film as surface plasmon-polariton waves; below the metal film is located a thin insulating layer and a doped semiconductor region forming a metal-insulator-semiconductor structure. The device can be configured to operate as a reflection or transmission modulator, or as a photodetector, for example. Modulating the voltage applied to the metal-insulator-semiconductor structure modulates the carrier concentration in the semiconductor near the insulating layer, which modulates the refractive index of the semiconductor in this region, thus modulating the coupling efficiency to the surface plasmon-polaritons, thus modulating the reflectance and transmittance of the device. Modulated incident light produces a modulated photocurrent under bias which may be detected ...

Optische Anordnung

Optischer Maser

PHOTOELECTRIC ELEMENT WITH RESONATOR

Solar cell and manufacturing method thereof

Housing for an optoelectronic component, optoelectronic component and method for producing a housing for an optoelectronic component

A housing for an optoelectronic component (1) comprising a plastic basic body (5) having a front side (6) with a mounting region for at least one radiation-emitting or radiation-detecting body (2) is disclosed, wherein the plastic basic body (5) is formed from at least one first plastic component (51) and at least one second plastic component (52) wherein the second plastic component (52) is arranged at the front side (6) of the plastic basic body (5), is formed from a material which differs in terms of at least one optical property from the material of the first plastic component (51) and forms an optical functional region of the plastic basic body (5). A method for producing a housing for an optoelectronic component and a light-emitting diode component are furthermore disclosed.

Image sensor and its production method

An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.

Dual-Side Illumination Image Sensor Chips and Methods for Forming Same

A dual-side illumination (DSI) image sensor chip and a method for forming the same are disclosed. The chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction.

With the gradual change of the buffer layer is backside-illuminated photosensitive device

OPTICAL COMPONENT HAS SEMICONDUCTOR COMPRISING AN ADAPTOR OF MODE

INFRARED PHOTODETECTOR AND METHOD FOR MAKING SAME

PROCEEDED OF SETTING OUT OF CASE Of a CHIP HAS SEMICONDUCTOR SENSORS IN PARTICULAR OPTICAL ETDISPOSITIF OR CASE CONTAINING SUCH a CHIP

DISPOSITIF SEMI-CONDUCTEUR EN IMMERSION OPTIQUE, NOTAMMENT DETECTEUR PHOTOVOLTAIQUE ET SON PROCEDE DE FABRICATION

LE DISPOSITIF SEMI-CONDUCTEUR DE L'INVENTION EST FORME D'UNE COUCHE OBTENUE A PARTIR D'UN SUBSTRAT DANS LAQUELLE UNE ZONE PRESENTE UN AUTRE TYPE DE CONDUCTIVITE QUE CELUI DE LA COUCHE ELLE-MEME AFIN DE FORMER UNE JONCTION PN. LE SUBSTRAT EST USINE SELON UNE FORME HEMISPHERIQUE, COMPORTANT AU CENTRE LA JONCTION PN OU SELON UNE FORME HYPERHEMISPHERIQUE COMPORTANT AU POINT DE WEIERSTRASS LA JONCTION PN. APPLICATION AUX PHOTODETECTEURS INFRAROUGES A GRANDE SURFACE DE DETECTION.

Optical semiconductor device, has IC chip casing enclosing optical sensors

Dispositif semi-conducteur optique comprenant une puce de circuits intégrés présentant dans sa face avant un capteur optique, une plaque support sur une face avant de laquelle est fixée la face arrière de la puce et des moyens de connexion électrique de la puce à la plaque support, comprenant un anneau de protection (7) fixé sur la face avant de la puce (3), autour et à distance du capteur optique (6), et un anneau (13) en une matière d'enrobage entourant la périphérie de la puce et s'étendant entre la face avant de la plaque support (2) et ledit anneau de protection.

INTEGRATED CIRCUIT INCLUDING/UNDERSTANDING OF THE MIRRORS BURY HAS DIFFERENT DEPTHS

L'invention concerne une structure semiconductrice comprenant une première zone active (R) sous laquelle est enterrée une première couche réfléchissante (32) et au moins une deuxième zone active (G) sous laquelle est enterrée une deuxième couche réfléchissante (34), caractérisée en ce que la surface supérieure de la deuxième couche réfléchissante est plus proche de la surface supérieure de la structure que la surface supérieure de la première couche réfléchissante.

Light-focusing solar chip package comprises covering encapsulating solar chip, substrate and wiring connection structures, focusing sunlight, and comprising anti-reflective structure to benefit sunlight absorption

La présente invention décrit une structure de boîtier de concentration de lumière à haute efficacité pour une puce solaire, qui comprend : un substrat (14) supportant la puce solaire (12), une paire de grilles de connexion d'électrode positive et d'électrode négative et un couvercle (18). Le couvercle (18) peut concentrer la lumière solaire et a également une fonction anti-réfléchissante pour favoriser l'absorption de la lumière solaire. En outre, la structure (10) de boîtier pour une puce solaire (12) de la présente invention est peu coûteuse et peut être agencée et assemblée selon la taille et la forme requises par un utilisateur.

THIN FILM PHOTOVOLTAIC DEVICE, IN PARTICULAR FOR SOLAR GLAZING

Dispositif photovoltaïque (1) à couches minces comprenant un substrat sur lequel est disposé un film photovoltaïque (3) comprenant une première couche conductrice formant un contact électrique arrière, une deuxième couche photoactive absorbant dans le spectre solaire à base de matériau inorganique, une troisième couche en matériau conducteur transparent formant un contact électrique avant, ledit film photovoltaïque étant divisé pour former une pluralité de cellules (30) photovoltaïques individuelles et interconnectées, dans lequel il comprend une pluralité de trous (31) individuels traversant au moins les première et deuxième couches du film photovoltaïque dans chaque cellule, chaque trou présentant des dimensions dans le plan principal comprises entre 10 nanomètres et 400 micromètres, chaque trou étant distant du trou adjacent le plus proche d'une distance comprise entre 5 nanomètres et 400 micromètres, et chaque cellule présentant une surface trouée, correspondant à la surface des trous ...

OPTOELECTRONIC DEVICE HAS QUANTUM WELLS

L'invention concerne un dispositif optoélectronique à puits quantiques comportant un empilement de couches (PQ) de largeurs de bandes interdites différentes et constituant des puits quantiques possédant dans la bande de conduction au moins deux niveaux d'énergie permis, cet empilement de couches étant compris entre deux moyens de réflexion (M1, M2). Il comporte également un réseau de diffraction (RZ) compris entre l'un des miroirs (M1) et l'empilement de couches (PQ).

Filter coloured and its manufactoring process

Un filtre coloré formé sur un substrat semiconducteur (31) doté d'une matrice d'éléments d'image (32 à 34) comprend, selon l'invention, une couche de lissage (39), des lentilles de concentration, ou condenseurs, (41), au moins deux intercouches (47, 51, 55), au moins deux couches colorées (45, 49, 53), une couche de lentille (57), et des lentilles (59, 60, 61) formées sur celle-ci, où la couche de lissage est concave au-dessus des photodiodes suivant un rayon de courbure prédéterminé, si bien que la transmissivité de la lumière sur la surface des couches colorées et la concentration de la lumière sont efficacement améliorées.

MODULATE OPTICAL INTEGRATES COMPRISING A WAVEGUIDE AND A DEVICE OF PHOTORECEPTION, AND ITS MANUFACTORING PROCESS

Un module optique selon l'invention comporte un substrat de support (21), un guide d'ondes optique (22) placé sur le substrat de support, un dispositif de photoréception (20) placé sur le substrat de support, une partie (23a) de conversion de trajet optique qui convertit le trajet optique d'un faisceau optique guidé dans le guide d'ondes optique, d'un premier trajet optique à un deuxième trajet optique qui conduit à une aire de photodétection dudit dispositif de photoréception, où la partie de conversion de trajet optique est placée sur ledit dispositif de photoréception au tube d'une partie de celui-ci, de sorte que le faisceau optique émis par le guide d'ondes optique vienne frapper l'aire de photodétection du dispositif de photoreception.

CAMERA MODULE PACKAGE FOR REDUCING THE SIZE OF THE PACKAGE BY MOUNTING LENS AT A BASE

PURPOSE: A camera module package is provided to minimize thickness of the package by attaching lens at a base, and minimize an error of focus distance between the lens and an image sensor by forming support members between the lens and the base, thereby obtaining reliability of the product. CONSTITUTION: A camera module package(100) comprises a base(120), a light permeating protective cap(140), and support members(130). The base has one surface with an image sensor(122), and pads(126) which are electrically connected with the image sensor. The protective cap is bonded on the base by an adhesive(142) to seal the image sensor. The support member supports at least one lens(110) on the base. A microlens(124) is on the image sensor. The support members are in the pad sequentially. © KIPO 2008 ...

METHOD FOR CHARGE COUPLED DEVICE

PURPOSE: A method for a charge coupled device is provided to apply accurately light to a photodiode even if a planarized layer or a micro-lens layer is thin by injecting impurities into the planarized layer or the micro-lens layer to increase the reflective index of the layers. CONSTITUTION: A plurality of the layers for a charge-coupled device(37) are formed on a substrate(31). A material for a planarized layer(44) is deposited on a passivation film(43), which is arranged on the top of the substrate(31), and the planarized layer(44) is formed by performing a baking process in high temperature. An impurity ion is injected in the planarized layer(44) to increase the index of the planarized layer(44). The impurity for the planarized includes argon(Ar). A micro-lens layer(45) is formed on the planarized layer(44) by depositing, exposing, developing and patterning of the material for the micro-lens layer(45). COPYRIGHT 2001 KIPO ...

OPTOELECTRONIC MICROELECTRONIC ASSEMBLY

점진적인 굴절률의 투명전극을 가진 질화갈륨 기반의 태양전지 및 그 제조방법

... 태양전지에 있어서, 상기 태양전지의 P형 화합물 반도체층과 P전극 사이에 적층되는 적어도 하나 이상의 물질층으로써, 상기 P형 화합물 반도체층에 가장 인접한 물질층으로부터 상기 P전극에 가장 인접한 물질층까지의 각 물질층이 점진적으로 낮은 굴절률을 갖는 물질로 이루어진 굴절률 조정부를 포함하는 것을 특징으로 하는 본 발명의 일 실시예에 따른 태양전지가 개시된다.

SEMICONDUCTOR DEVICE USING ENHANCED ARRANGEMENT OF METAL LINE LAYER AND REFLECTIVE COATING CAPABLE OF PREVENTING CONDUCTIVE TERMINAL FROM BEING CONTAINED IN OUTPUT IMAGE

PURPOSE: A semiconductor device is provided to prevent a metal line layer from being contained in an output image by using an improved arrangement of the metal line layer and a reflective coating. CONSTITUTION: A semiconductor device includes a semiconductor substrate(2) having a light receiving element(1), a light transmitting substrate(6) attached to the substrate on the light receiving element, a metal line layer(10) formed on a rear surface of the substrate, and a reflective coating. The reflective coating(8) is formed between the light receiving element and the metal line layer to reflect the infrared ray supplied to the metal line layer from the light transmitting substrate through the substrate. The reflective coating is completely overlapped with the light receiving element forming region. The metal line layer is formed along a lateral portion of the substrate. © KIPO 2007 ...

HIGH SPEED PHOTODIODE WITH BURIED BARRIER LAYER FOR PREVENTING OR REMOVING SLOW CARRIERS AND METHOD OF FORMING THE SAME

PURPOSE: A high speed photodiode and a method of forming the same are provided to prevent effectively slow photon-generated carriers and to remove etalon effect by inserting a buried barrier layer in a photodetector. CONSTITUTION: A photodiode(600) includes a photodetector, a substrate(600A) under the photodetector, and a buried barrier layer(650) on the substrate. The photodetector is formed on the substrate or in the substrate. The barrier layer includes a p-n junction. The p-n junction includes a single p-n junction. The single p-n junction includes one selected out of the substrate and an absorption layer(620). The barrier layer includes a bubble layer. © KIPO 2005 ...

CMOS IMAGE SENSOR

PURPOSE: A CMOS image sensor is provided to be adapted for obtaining an image pickup device for a miniature camera module and to be produced at a low cost. CONSTITUTION: The CMOS image sensor(2) is provided with a light receiving unit(2a) which functions as a photoelectric converting device, in approximately central region of the upper surface, and a signal processing circuit(2c) in a peripheral region there. On the upper surface of light receiving unit(2a), a color filter array(2f) for forming color digital images is provided, and a microlens array(2g) is layered on color filter array(2f). © KIPO 2003 ...

SOLID STATE IMAGE PICKUP DEVICE, COLOR SEPARATION IMAGE PICKUP OPTICAL SYSTEM USING THE SAME CAPABLE OF PERFORMING COLOR SEPARATION WITHOUT NOISES AND IMAGE PICKUP APPARATUS

PURPOSE: A solid state image pickup device, a color separation image pickup optical system using the same and an image pickup apparatus are provided to perform stably a color separation without noises and to reduce the size. CONSTITUTION: A plurality of photoelectric transformation elements(5) are formed on a semiconductor substrate(4). The resultant structure is sealed in a package(2) by using a transparent seal member(3), so that a solid state image pickup device is completed. At this time, a color absorbing member is arranged to the transparent seal member side from the photoelectric transformation element. The color absorbing member is capable of absorbing a visible wavelength range. © KIPO 2007 ...

SILICON PHOTO DEVICE AND LIGHT EMITTING DIODE DEVICE USING THE SAME

PURPOSE: A silicon photo device and an LED(Light Emitting Diode) device using the same are provided to be capable of improving the efficiency of the device and reducing fabrication cost. CONSTITUTION: A silicon photo device is provided with an N-type or P-type silicon substrate(11), an extremely shallow doped region(15) formed on one surface of the silicon substrate by implanting predetermined dopants for using the photoelectric conversion effect due to the quantum confinement effect generated at a P-N junction portion(14), the first electrode(17) formed and electrically connected with the extremely shallow doped region, and the second electrode(19) formed on the other surface of the silicon substrate. Preferably, the silicon photo device further includes a control layer(13) used as a mask when forming the doped region. © KIPO 2003 ...

SENSOR SUBSTRATE AND SENSING DISPLAY PANEL HAVING THE SAME

INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

PHOTOVOLTAIC MODULE HAVING AT LEAST ONE SOLAR CELL

The invention relates to a photovoltaic module having at least one solar cell comprising an energy-producing layer, a contact layer being formed on the reverse radiation side of said layer and a second contact layer being formed on the front radiation side of said layer, wherein a light-amplifying material is formed beneath a side of the first contact layer facing away from the first contact layer.

STRUCTURE FOR IMPLEMENTATION OF BACK-ILLUMINATED CMOS OR CCD IMAGERS

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semicontuctor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

IMAGE MODULE

The invention relates to an image module comprised of the following principal elements: a module board with an image sensor that is mounted thereon or on the rear side thereof by means of flip-chip technology. The aim of the invention is to create an image module in which a simple, precise and rapid mounting of the functional assemblies with the precise allocation of the distance between the surface of the image sensor and the lens system is made possible. To this end, the invention provides that three interspaced spacer elements (9) are placed between the module board (2) and the covering element (7). These spacer elements define the distance between the image sensor (3) on the module board (2) by defining a predetermined air gap (11).

AN APPARATUS AND ASSOCIATED METHODS RELATED TO DETECTION OF ELECTROMAGNETIC SIGNALLING

In one or more embodiments described herein, there is provided an apparatus (100) comprising a first layer (110) for detecting electromagnetic signalling, and a second layer (120) positioned proximate to the first layer. The first layer (110) comprises graphene, and the second layer (120) is configured to undergo plasmonic resonance in response to receiving electromagnetic signalling. This plasmonic resonance that the second layer (120) undergoes thereby sensitizes the graphene of the first layer (110) to detection of particular spectral characteristics of received electromagnetic signalling corresponding to the particular plasmonic resonance of the second layer (120).

POSITION DETECTING DEVICE, SUBSTRATE OVERLAPPING APPARATUS, AND OPTICAL AXIS ALIGNING METHOD

Provided is a position detecting device, which can correct, even if the position detecting device comprises a first objective optical element and a second objective optical element, the positional discrepancies of the optical axes of those optical elements, thereby to perform highly precise position detection. The position detecting device (70) comprises the first objective optical element (13), a first imaging unit (12) for receiving a luminous flux having passed through the first objective optical element, the second objective optical element (23) arranged to face the first objective optical element (13), a second imaging unit (22) for receiving a luminous flux having passed through the second objective optical element, and an adjusting unit (60) for adjusting the relative positional discrepancies between the optical axis of the first objective optical element and the optical axis of the second objective optical element.

OPTICAL TRANSMISSION AND RECEPTION MODULE

There is provided, relating to optical modules used as terminal devices for wavelength-multiplexing optical transmission and single-fiber bidirectional optical transmission, an optical module, the size of which can be reduced and the yield of which can be improved by significantly reducing the number of optical parts and the number of mounting process steps by a batch fabrication used in, for example, a wafer process while maintaining low-loss optical characteristics and high reliability. There is also provided a method of fabricating the optical module. An optical element mounting substrate (1) having one light-emitting element and at least one light-receiving element, which are mounted on the same plane, and an optical multiplexer/demultiplexer (2) having a wavelength selection filter and a mirror, which are mounted on the front and rear surfaces of a transparent substrate, are prepared. Then, the optical element mounting substrate (1) and the optical multiplexer/demultiplexer (2) are ...

USE OF MATERIAL WITH A MODIFIED SURFACE TOPOGRAPHY IN DEVICES FOR GENERATING AN ELECTRIC CURRENT FROM INCIDENT LIGHT

The invention is based on the observation by the inventors that modification of the surface topography of materials through the creation of an ordered network of cavities filled with another material with a different refractive index generates photonic bands at the surface of the material that alter the refractive index of the material on which said cavities are created. Depending on the angle of incidence and the wavelength of the light, this change in refractive index can facilitate or inhibit the transmission and reflection of the light. On the basis of this new observed property, the topography of a solar cell was modified by creating an ordered network of cavities filled with air, and it was confirmed that there was an increased generation of electricity from incident light than in a solar cell with the same characteristics but without a modified surface topography.

PHOTOVOLTAIC CELL HAVING A STRUCTURED BACK SURFACE AND ASSOCIATED MANUFACTURING METHOD

The invention relates to a photovoltaic cell (1) which includes at least one wafer (2) of a semi-conductor material, with a front surface (21) intended for receiving incident light and a back surface (22) opposite said front surface, as well as to methods for manufacturing said photovoltaic cell. The back surface (22) includes an electric contact (32) and a structure (4), referred to as an optical structure, which is discrete and capable of redirecting the incident light towards the core of the wafer.

METHOD FOR PRODUCING ELECTRONIC COMPONENTS

The invention concerns a method enabling integration of functional structures in the package housing electronic components, for producing an electronic component comprising at least a semiconductor having on at least one side, at least an active detecting and/or transmitting device. Said method is characterized in that it comprises the following steps: preparing at least a chip on a wafer, preparing at least a support structure having at least a functional structure for the active detecting and/or transmitting device, assembling the wafer to at least a support, so that the side of the chip including the active detecting and/or transmitting device faces the support, separating the chip.

SILICON-BASED SCHOTTKY BARRIER INFRARED OPTICAL DETECTOR

A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., "planar SOI layer") of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.

EXPOSURE CONTROLLING PHOTOMASK AND PRODUCTION METHOD THEREFOR

An exposure controlling photomask used for forming a 3-D plane structure on a resist pattern, and having a shielding film capable of continuously controlling a transmitting light quantity between 100% and 0%, and a production method therefor. A shielding film (2) is deposited on a substrate (3), and a photosensitive material (6) is applied onto the film. Electron beams are applied in different irradiation amounts to different locations on the material (6) by using an electron beam exposure technique, and then the material (6) is developed to be formed into a 3-D plane structure. In an etching process that follows, the material (6) and the shielding film (2) as a base are etched back to transfer the 3-D plane structure to the shielding film (2).

Method and Structure for Fabricating Solar Cells

A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.

END SURFACE INCIDENT-TYPE LIGHT RECEIVING ELEMENT

An end surface incident-type light receiving element according to an aspect of the present disclosure is made of a semiconductor material, and includes an upper surface and a lower surface that are opposite to each other in the vertical direction, and an end surface that couples the upper surface and the lower surface and is to be arranged on a light source side, the light source side being a side from which the light source emits light. At least a portion of the end surface is inclined relative to the vertical direction such that the lower surface side is arranged closer to the light source than the upper surface side is. The lower surface is provided with one or more grooves. The inclined surfaces on the end surface side of one or more grooves are arranged so as to reflect incident light that is emitted from the light source and passes through the end surface. A light receiving region for receiving the light reflected by the inclined surfaces on the end surface side of the one or more ...

Structure for calibrating packaging of electric micro-optic modules

The present invention relates to a structure for calibrating the alignment between a lens set and an image sensor in the process of packaging such as an electric micro-optic module (EMOM) or compact camera module (CCM) by using a matching structure like sawteeth or V-grooves at contact surfaces or edges. Random variations due to manufacturing process can be averaged out by a plurality of the V-grooves and high precision can be obtained by the present invention.

Convex-microgranular surface structure

The surface and/or interface of a lens or the like is formed with a convex-microgranular surface. For this purpose, a stamper 108 having a concave-micro-granular transfer-molding surface transfer-molded from a convex-microgranular surface comprised of SiO2 or the like and varying continuously in the index of refraction is used to reproduce the convex-microgranular surface.

Method of manufacturing a terminal device for an optical fiber, and device thus obtained

A method of manufacturing a terminal device by the steps of locking an afocal system, which is formed by a ball lens and an opto-electronic element, to the bottom of a housing, and centering central aperture of a diaphragm with respect to the ball lens. Subsequently, using a mechanical guiding operation by means of a pin, the micro-component thus formed is positioned with respect to a reference surface of a base. The terminal device thus obtained is capable of receiving an optical fiber in its central aperture without further alignment being required.

Parabolic light emitter and detector unit

A parabolic light emitter incorporates a solid state light emitter embedded in a transparent body formed with one planar surface and an opposing surface formed as a paraboloid, the outer surface of which is coated with a light reflecting material. In one embodiment, a reflective member is interposed between the light emitter and the planar surface.

Back surface illuminated infrared detector

An infrared detector, having improved infrared absorptance and operating performance at or near ambient as well as the cryogenic temperature ranges. The infrared detector, in one embodiment includes a multi-filament HgCdTe detector region mounted upon a CdTe substrate, a metallic reflective region placed in front of, or behind, the HgCdTe detection region forming a resonant layer between the reflective region and HgCdTe. Electrical contacts operable to detect the change in resistance of the HgCdTe detector filaments are connected to the detector region. Embodiment for a back surface illuminated detector device is described for use in the 8 micron to 12 micron, longwave infrared (LWIR) range. Improved operation in the LWIR range at higher temperatures results in detector arrays having decreased cooling needs and infrared detector systems produced with a significant decrease in overall system weight.

Solid-state imaging device and electronic apparatus

To provide a sensor capable of enhancing reliability and image quality. There is provided a solid-state imaging device including a functional element, a spectroscopic element, a semiconductor substrate, and a photoelectric conversion element formed in the semiconductor substrate, in which the spectroscopic element is disposed between the functional element and the photoelectric conversion element, and the functional element corrects incident light to light in a direction substantially perpendicular to the photoelectric conversion element.

Integrated LED/photodiode collimator array

The present invention relates to a collimator assembly for use in an optical switch. The collimator assembly includes an integrated LED/photodiode plane disposed in a dual microlens array. The integrated LED/photodiode plane results in a relatively simple way to manufacture high port count collimator arrays with integrated monitoring capabilities. The LED/photodiode plane can be readily produced using standard electronics manufacturing technology.

Miniaturized image sensor module

A miniaturized image sensor module including a substrate, a photosensitive chip, a transparent layer, an injection molded structure, and a lens barrel. The substrate has an upper surface, a lower surface and a slot. The chip is electrically connected to the lower surface of the substrate with a photosensitive region of the chip exposed from the slot. The transparent layer is arranged on the upper surface of the substrate to cover over the slot. The injection molded structure encapsulates and packages the substrate and the chip and is formed with a frame layer on a top of the transparent layer. The frame layer is formed with an internal thread and the lens barrel is formed with an external thread to be screwed to the internal thread. The lens barrel is formed with a chamber and an opening communicating with the chamber. An aspheric lens is also arranged within the chamber.

Photoelectric conversion device for use in sensing light reflected from medium surface

A photoelectric conversion device is disclosed having a light shield layer made of a relatively low conductivity material. The light shield layer is provided on an insulating substrate and shades light passing through the insulating substrate toward the reverse surface of a photoelectric conversion layer such that light cannot reach the reverse surface of the photoelectric conversion layer directly.

INFRARED MULTIPLIER FOR PHOTO-CONDUCTING SENSORS

Photo-conducting infrared sensors are provided including a substrate (e.g., silicon) with one or more trenches formed on a first surface. An infrared-reflective film can be deposited directly or indirectly onto and conforming in shape with the first surface of the substrate. A lead chalcogenide film can be deposited directly or indirectly over the top of the infrared-reflective film and conforming in shape with the first surface of the substrate. Accordingly, the infrared-reflective film is directly or indirectly sandwiched between the substrate and the lead chalcogenide film.

OPTICAL SENSOR

The present disclosure relates to an optical sensor module, an optical sensing accessory, and an optical sensing device. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory and an optical sensing device comprise the optical sensor module and other electronic modules to have further applications.

Digital camera with multiple pipeline signal processors

A method includes sampling a first intensity of light with a first array of photo detectors of a digital camera. A second intensity of light is sampled with a second array of photo detectors of the digital camera. A first channel processor coupled to the first array of photo detectors generates a first image using first array data which is representative of the first intensity of light sampled by the first array of photo detectors. A second channel processor coupled to the second array of photo detectors generates a second image using second array data which is representative of the second intensity of light sampled by the second array of photo detectors. The first array of photo detectors, the second array of photo detectors, the first channel processor, and the second channel processor are integrated on or in a semiconductor substrate.

Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

PHOTODETECTOR WITH A PLASMONIC STRUCTURE

This photodetector capable of detecting electromagnetic radiation comprises: a doped semiconductor absorption layer for said radiation, capable of converting said radiation into charge carriers; a reflective layer that reflects the incident radiation that is not absorbed by semiconductor layer towards the latter, located underneath semiconductor layer; and a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface Plasmon resonator so as to concentrate the incident electromagnetic radiation on metallic structure in the field concentration zones of semiconductor layer. Semiconductor zones for collecting charge carriers that are oppositely doped to the doping of semiconductor layer are formed in said semiconductor layer and have a topology that complements that of the field concentration zones.

Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same

Material and antireflection structure designs and methods of manufacturing are provided that produce efficient photovoltaic power conversion from single- and multijunction devices. Materials of different energy gap are combined in the depletion region of at least one of the semiconductor junctions. Higher energy gap layers are positioned to reduce the diode dark current and enhance the operating voltage by suppressing both carrier injections across the junction and recombination rates within the junction. Step-graded antireflection structures are placed above the active region of the device in order to increase the photocurrent.

PORTABLE ELECTRONIC DEVICE

The present invention provides a portable electronic device, an image-capturing module thereof and a carrier assembly thereof. The image-capturing module includes a circuit substrate, an image-sensing chip, at least one electronic component, a dispensing package, and a lens assembly. The circuit substrate has a top surface and a bottom surface. The image-sensing chip is electrically connected to the circuit substrate, and the image-sensing chip has an image-sensing area. The at least one electronic component is disposed on the bottom surface of the circuit substrate and electrically connected to the circuit substrate. The dispensing package is disposed on the bottom surface of the circuit substrate to cover the at least one electronic component. The lens assembly includes a holder structure disposed on the top surface of the circuit substrate and a lens structure being held by the holder structure and corresponding to the image-sensing area.

METHOD FOR PRODUCING OPTICAL COMPONENT, OPTICAL COMPONENT, AND OPTICAL DEVICE

A method for producing an optical component includes presenting a laminate and separating a second layer from a substrate. In presenting the laminate, the laminate includes the substrate, a first layer disposed on the substrate, the second layer disposed on the first layer, and a third layer disposed on the second layer. The first layer includes a portion that does not overlap with the second layer and the third layer. In separating the second layer from the substrate, the second layer is separated from the substrate by dissolving the first layer from the substrate with a liquid. The first layer and the third layer each contain a compound.

PHOTODIODE AND PHOTODIODE ARRAY

A photodiode array PDA1 is provided with a substrate S wherein a plurality of photodetecting channels CH have an n-type semiconductor layer 32. The photodiode array PDA1 is provided with a p type semiconductor layer 33 formed on the n-type semiconductor layer 32, resistors 24 provided for the respective photodetecting channels CH and each having one end portion connected to a signal conducting wire 23, and an n-type separating portion 40 formed between the plurality of photodetecting channels CR The p type semiconductor layer 33 forms pn junctions at an interface to the n-type semiconductor layer 32 and has a plurality of multiplication regions AM for avalanche multiplication of carriers generated with incidence of detection target light, corresponding to the respective photodetecting channels. An irregular asperity 10 is formed in a surface of the n-type semiconductor layer 32 and the surface is optically exposed.

Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces

An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

Photoelectric conversion device and fabrication method therefor

A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.

Гибридный фотоприёмный модуль для низкоуровневой телевизионной камеры наблюдения

Полезная модель относится к электронной технике, в частности, к устройству низкоуровневой телевизионной камеры наблюдения. Гибридный фотоприёмный модуль для низкоуровневой телевизионной камеры наблюдения содержит электронно-оптический преобразователь с выходным окном в виде газонепроницаемого волоконно-оптического элемента с люминесцентным экраном на торце, расположенным в вакуумном объёме электронно-оптического преобразователя, и сборку сенсора изображения с газонепроницаемым волоконно-оптическим элементом, один торец которого контактирует с сенсором изображения, а другой - с торцом волоконно-оптического элемента электронно-оптического преобразователя, противоположного торцу с люминесцентным экраном. При этом между контактирующими торцами волоконно-оптических элементов расположена оптически прозрачная плёнка. Техническим результатом предложенной полезной модели является устранение интерференционных пятен. 1 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 195 121 U1 (51) МПК H01L 31/0232 (2014.01) H01J 31/50 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 31/0232 (2019.08); H01J 31/502 (2019.08) (21)(22) Заявка: 2019129721, 20.09.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 15.01.2020 (73) Патентообладатель(и): Акционерное общество "Научно-производственное предприятие "Пульсар" (RU) (45) Опубликовано: 15.01.2020 Бюл. № 2 (54) Гибридный фотоприёмный модуль для низкоуровневой телевизионной камеры наблюдения (57) Реферат: Полезная модель относится к электронной оптическим элементом, один торец которого технике, в частности, к устройству контактирует с сенсором изображения, а другой низкоуровневой телевизионной камеры - с торцом волоконно-оптического элемента наблюдения. Гибридный фотоприёмный модуль электронно-оптического преобразователя, для низкоуровневой телевизионной камеры противоположного торцу с люминесцентным наблюдения содержит электронно-оптический экраном. При этом ...

Light harvesting system employing microstructures for efficient light trapping

A light harvesting system employing a focusing array and a photoresponsive layer in which a plurality of microstructured areas is formed. Light received by the focusing array is injected transmissively into the photoresponsive layer through the microstructured areas. The injected light is retained in the photoresponsive layer by at least a total internal reflection and is propagated within the layer until it is substantially absorbed.

Photodetector structure and method of manufacturing the same

A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

Solar Wall Apparatus and Method

A construction panel includes a pane, a construction substrate, and a frame that form an air gap there between. An electrical generator, a water circulator, and an air venting system are in the air gap. First and second reflective coatings are respectively on first surfaces of the pane and the construction substrate. The first surfaces face the air gap. The reflective coatings reflect IR to heat water in the water circulator and heat air in the air gap. First and second antireflective coatings are respectively on a second surface of the pane and on the first reflective coating. The second surface faces away from the air gap. The antireflective coatings transmit electromagnetic radiation to the electrical generator for electricity generation. The heated water, heated air, and electricity may be used in a building to which the construction panel is attached. The solar-construction panel includes a multiple-pane window integrally formed therein.

Nanoparticle Plasmon Scattering Layer for Photovoltaic Cells

The present invention relates to nanoparticle compositions for use in photovoltaic cells. Nanoparticles are utilized to provide increased scattering and also wavelength shifting to increase the efficiency of the photovoltaic cells. Exemplary nanoparticles include colloidal metal and fluorescent nanoparticles.

Optoelectronic semiconductor bodies having a reflective layer system

An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semiconductor layer sequence ( 10 ). The first radiation-permeable layer ( 21 ) contains a first dielectric material. Between the first radiation-permeable layer ( 21 ) and the metal layer ( 23 ) there is disposed a second radiation-permeable layer ( 22 ) which contains an adhesion-improving material. The metal layer ( 23 ) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer ( 23 ) is improved in comparison with the adhesion on the first dielectric material.

Infrared light detector

Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of first electronic regions 10 in a connected status is configured such that an electron energy level of excited sub-bands of each of the plurality of first electron regions 10 in a disconnected status is sufficiently higher than a Fermi level of each of second electronic regions 20 opposed to each of the first electronic regions 10 in a conduction channel 120.

Photoelectric conversion device and method for producing photoelectric conversion device

A manufacturing method forms a photoelectric conversion device having a photoreceiving portion provided in a substrate and an interlayer film arranged over the substrate. The method includes forming a layer of a lower etching rate rather than the interlayer film so that the layer of the lower etching rate covers a whole surface of the photoreceiving portion, forming the interlayer film over the layer of the lower etching rate, etching a portion of the interlayer film corresponding to the photoreceiving portion to form a hole penetrating through the interlayer film and reaching the layer of the lower etching rate, and disposing in the hole a material of a higher refractive index rather than the interlayer film.

Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors

The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.

Composition for producing a filter material for radiation, method for producing a composition for a filter material, material for filtering radiation, and an optoelectronic device comprising the material

Composition for producing a filter material for radiation includes a silicone and at least one dye dispersed in the silicone, wherein the composition has a relative transmission of less than 20% for radiation of the wavelength of 400 nm to 700 nm, and has a relative transmission of greater than 50% for radiation of the wavelength of 850 nm to 1025 nm.

Optical Device

An improved optoelectronic device is described, which employs optically responsive nanoparticles and utilises a non-radiative energy transfer mechanism. The nanoparticles are disposed on the sidewalls of one or more cavities, which extend from the surface of the device through the electronic structure and penetrate the energy transfer region. The nanoparticles are located in close spatial proximity to an energy transfer region, whereby energy is transferred non-radiatively to or from the electronic structure through non-contact dipole-dipole interaction. According to the mode of operation, the device can absorb light energy received from the device surface via the cavity and then transfer this non-radiatively or can transfer energy non-radiatively and then emit light energy towards the surface of the device via the cavity. As such, the deice finds application in light emitting devices, photovoltaic (solar) cells, displays, photodetectors, lasers and single photon devices.

Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus

An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.

Optical communication module

It is expected to provide an optical communication module that does not require making a conductive plate, such as a leadframe, become thinner in response to the downsizing of the photoelectric conversion device, such as a laser diode or a photodiode, and does not require downsizing a lens. A laser diode is connected and fixed to a conductive plate on the top surface of a transparent light-passing board. The light-passing board is connected and fixed to a conductive plate on the top surface of a transparent base. A first lens and a second lens are integrally formed on the top and the bottom surfaces of the base, respectively. The laser diode performs transmission of optical signals through the gap of conductive plate, the transparent light-passing board, the opening portion of a conductive plate, the opening portion of conductive plate, the first lens, the transparent base and the second lens.

Acrylate composition

The invention provides a composition containing (A) one or more (meth)acrylate compounds selected from among a (meth)acryl-modified silicone fluid, a long-chain alkyl(meth)acrylate, and a polyalkylene glycol(meth)acrylate having a number average molecular weight of 400 or more; (B) a (meth)acrylate compound having an alicyclic hydrocarbon group which has six or more carbon atoms and which is bonded to the compound via an ester bond; (C) (meth)acrylic acid or a (meth)acrylate compound having a polar group; and (D) a radical polymerization initiator. The composition is suitably employed as a raw material for, for example, an encapsulating material or a lens, exhibits transparency and heat resistance comparable to conventional levels, and provides a cured product exhibiting excellent adhesion to a base member surrounding the cured product.

Solar cells with magnetically enhanced up-conversion

A method of magnetically enhancing up-conversion components includes providing at least one of up-conversion material and sensitizer material (i.e. up-conversion components), generally in conjunction with a semiconductor solar cell, and positioning magnetic apparatus adjacent the up-conversion components to supply a magnetic field to the up-conversion components. The magnetic field has an intensity and direction selected to enhance operation of the up-conversion components.

Light sensor having transparent substrate and through-substrate vias

Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.

Solid-state imaging device, electronic apparatus, and method for manufacturing the same

A solid-state imaging device includes photoelectric conversion elements on an imaging surface of a substrate, receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge. Electrodes are interposed between the photoelectric conversion elements and light blocking portions are provided above the electrodes and interposed between the photoelectric conversion elements. The light blocking portions include an electrode light blocking portion formed to cover the corresponding electrode, and a pixel isolation and light blocking portion protruding convexly from the upper surface of the electrode light blocking portion. The photoelectric conversion elements are arranged at first pitches on the imaging surface. The electrode light blocking portions and the pixel isolation and light blocking portions are arranged at second and third pitches on the imaging surface. At least the third pitch increases with distance from the center toward the periphery of the imaging surface.

Correction wedge for leaky solar array

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

Orthogonal scattering features for solar array

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

Photodetector capable of detecting the visible light spectrum

Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Optical sensor and electronic apparatus

An optical sensor includes an impurity region for a photodiode and an angle limiting filter limiting the incidence angle of incidence light incident to a light receiving area of the photodiode, which are formed on a semiconductor substrate. The angle limiting filter is formed by at least a first plug corresponding to a first insulating layer and a second plug corresponding to a second insulating layer located in an upper layer of the first insulating layer. Between the first plug and the second plug, there is a gap area having a gap space that is equal to or less than λ/2.

Optical coupling element and method of manufacturing the same

According to one embodiment, an optical coupling element comprises an optical waveguide, a ferrule provided with a holding hole which holds the optical waveguide, electrical read frame formed on the element mounting surface of the ferrule, an optical semiconductor element which is mounted on the element mounting surface of the ferrule and connected to the electrical read frame, and a transparent adhesive which fills the gap between the optical semiconductor element and the optical waveguide. At least one side of the optical semiconductor element partially falls within a region obtained by extending the holding hole in the ferrule toward the optical semiconductor element.

Light trapping architecture for photovoltaic and photodector applications

There is disclosed photovoltaic device structures which trap admitted light and recycle it through the contained photosensitive materials to maximize photoabsorption. For example, there is disclosed a photosensitive optoelectronic device comprising: a first reflective layer comprising a thermoplastic resin; a second reflective layer substantially parallel to the first reflective layer; a first transparent electrode layer on at least one of the first and second reflective layer; and a photosensitive region adjacent to the first electrode, wherein the first transparent electrode layer is substantially parallel to the first reflective layer and adjacent to the photosensitive region, and wherein the device has an exterior face transverse to the planes of the reflective layers where the exterior face has an aperture for admission of incident radiation to the interior of the device.

Semiconductor light-receiving device

A semiconductor light-receiving includes: a substrate; a semiconductor light-receiving element that is provided on the substrate and has a first conductivity region and a second conductivity region; a first electrode electrically coupled to the first conductivity region; a second electrode electrically coupled to the second conductivity region; an insulating layer located on the second conductivity region; and a wiring that is located on the insulating layer and is electrically coupled to the first electrode, the wiring being elongated from the first electrode to a peripheral region of the semiconductor light-receiving element, the wiring having a region of first width and a region of second width narrower than the first width, the region of second width of the wiring being located on the second conductivity region.

X-y address type solid state image pickup device and method of producing the same

In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Process Module for Increasing the Response of Backside Illuminated Photosensitive Imagers and Associated Methods

Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

Hybrid silicon evanescent photodetectors

Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

Direct readout focal plane array

According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

A solar cell and a method of manufacturing the same are provided. The solar cell includes: i) a first conductive layer; ii) a plurality of nano structures that are positioned on the first conductive layer and that are extended to cross a surface of the first conductive layer and that are separated from each other; iii) a resin layer that is positioned on the first conductive layer and that is filled at space between the plurality of nano structures; iv) at least one semiconductor layer that is positioned on the resin layer and that covers the plurality of nano structures; and v) a second conductive layer that covers the semiconductor layer and that has a light transmittance lower than that of the first conductive layer. 1. A solar cell , comprising:a first conductive layer;a plurality of nano structures that are positioned on the first conductive layer and that are extended to cross a surface of the first conductive layer and that are separated from each other;a resin layer that is positioned on the first conductive layer and that is filled at space between the plurality of nano structures;at least one semiconductor layer that is positioned on the resin layer and that covers the plurality of nano structures; anda second conductive layer that covers the semiconductor layer and that has a light transmittance lower than that of the first conductive layer.2. The solar cell of further comprising a dielectric layer that that is positioned on a surface of the plurality of nano structures and that contacts with the resin layer.3. The solar cell of claim 1 , wherein the second conductive layer has a thickness of 20 μm to 100 μm.4. The solar cell of claim 1 , further comprising at least one electron transfer body that is positioned on the first conductive layer and that contacts with a lower end portion of the plurality of nano structures.5. The solar cell of claim 4 , wherein the second conductive layer and the electron transfer body comprise the same metal.6. The solar cell ...

APPARATUS FOR SOLAR TRACKING OF ENERGY HARVESTER

An apparatus for solar tracking using minimal energy is described. A prismatic energy harvester () is positioned above a spring (). The harvester has a pair of ears () at both side of the top portion of the harvester. The ear is moved by strings () from a reel () connected to a box of motor (). At least two photo-resistive elements track the sun rays intensity to identify the position of the sun. Then, the motor adjust the reels to rotate the harvester using strings until the harvester and the sun is at right angle. The photo-resistive elements continuously track the sun so that the harvester can be rotated towards the sun at right angle. 1. An apparatus for solar tracking of energy harvester comprising: a prismatic energy harvester , a spring supporting the harvester , a pair of ears on both side of the top portion of the harvester , a pair of strings connected to one end of the ears , a pair of reels containing strings , a box of motor which controls the reel , and at least two photo-resistive elements to track the intensity of sun ray , wherein the position of the sun is continuously detected by comparing the intensity of sun ray and the motor is directed to adjust the reel so that the harvester is rotated towards the sun at right angle , whereby the spring allows the harvester to be rotated with minimal energy.2. The apparatus according to claim 1 , wherein the pair of ears are preferably V-shaped ears.3. The apparatus according to claim 2 , wherein the pair of V-shaped ears are made with wires. The present invention relates generally to apparatus for energy harvesting, more particularly to apparatus for solar energy harvesting with solar tracker.For profiling environment in precision agriculture using wireless sensor network, a huge number of low powered devices are required. It is desirable that that these devices harvest their own power using autonomous energy harvester. Solar cell, utilizing solar energy becomes an attractive viable source to complement ...

WAVELENGTH CONVERSION TYPE PHOTOVOLTAIC CELL SEALING SHEET AND PHOTOVOLTAIC CELL MODULE

A wavelength conversion type photovoltaic cell sealing sheet of the present invention includes a dispersion medium resin, and a fluorescent material having an absorption wavelength peak at from 300 to 450 nm, wherein a content of an ultraviolet absorber other than the fluorescent substance is 0.15 parts by mass or less with respect to 100 parts by mass of the dispersion medium resin. Furthermore, a photovoltaic cell module of the present invention has a photovoltaic cell and the wavelength conversion type photovoltaic cell sealing sheet. 1. A wavelength conversion type photovoltaic cell sealing sheet comprising a dispersion medium resin and a fluorescent material having an absorption wavelength peak at from 300 to 450 nm , wherein a content of an ultraviolet absorber other than the fluorescent material is 0.15 parts by mass or less with respect to 100 parts by mass of the dispersion medium resin.2. A wavelength conversion type photovoltaic cell sealing sheet according to claim 1 , wherein the fluorescent substance is a europium complex.3. A photovoltaic cell module comprising a photovoltaic cell and the wavelength conversion type photovoltaic cell sealing sheet according to provided on a light-receiving surface side of said photovoltaic cell.4. A photovoltaic cell module comprising a photovoltaic cell and the wavelength conversion type photovoltaic cell sealing sheet according to provided on a light-receiving surface side of said photovoltaic cell. The present invention relates to a wavelength conversion type photovoltaic cell sealing sheet and a photovoltaic cell module using the same. More particularly, the present invention relates to a wavelength conversion type photovoltaic cell sealing sheet which contains no ultraviolet absorber other than a fluorescent substance; and a photovoltaic cell module using the same.Silicon crystal-based photovoltaic cells generally have a low sensitivity to a light in the ultraviolet region. Therefore, it has been attempted to ...

FLIP-CHIP BONDED IMAGER DIE

An image sensor includes an imager die, a circuit board, and an optical layer. The circuit board is flip-chip bonded to the imager die. The optical layer is adhered to the circuit board and includes a first portion configured to refract light differently than a second portion. Both the first portion and the second portion are integrally formed with the optical layer. 1. An image sensor comprising:an imager die;a circuit board flip-chip bonded to the imager die;an optical layer adhered to the circuit board and having a first portion configured to refract light differently than a second portion, wherein both the first portion and the second portion are integrally formed with the optical layer.2. The image sensor of claim 1 , wherein the first portion is optically aligned with the imager die.3. The image sensor of claim 1 , further comprising a lens disposed on the optical layer and optically aligned with the first portion.4. The image sensor of claim 3 , wherein the lens is disposed on the optical layer via an ultraviolet cure bond.5. The image sensor of claim 1 , further comprising an adhesive layer disposed between the optical layer on the circuit board.6. The image sensor of claim 1 , further comprising a heat sink disposed on the imager die.7. The image sensor of claim 1 , wherein the circuit board includes a flexible circuit board.8. The image sensor of claim 1 , wherein the circuit board has a thickness of approximately 0.5 mil to 2 mil9. The image sensor of claim 1 , wherein the circuit board includes a trace having a thickness of approximately 0.2 mil to 2 mil.10. An image sensor comprising:an imager die;a circuit board flip-chip bonded to the imager die;a stiffener adhered to the circuit board;an optical layer adhered to the stiffener and having a first portion configured to refract light differently than a second portion, wherein both the first portion and the second portion are integrally formed with the optical layer.11. The image sensor of claim 10 , ...

Spectral Modification

Spectral modification devices and methods are described. For example, an apparatus for spectral modification of incident radiation includes a substrate and Raman shifting material embedded in or on the substrate, the Raman shifting material selected based on a desired optical or electrical performance of a light absorbing structure. 1. An apparatus for spectral modification of incident radiation comprising:a substrate; andRaman shifting material on or embedded in the substrate, the Raman shifting material selected based on a desired optical or electrical performance of a light absorbing structure.2. The apparatus of claim 1 , wherein the Raman shifting material comprises nano-scale particles and powdered materials.3. The apparatus of claim 2 , wherein the powdered materials comprise diamond powder.4. The apparatus of claim 2 , wherein the nano-scale particles comprise silver claim 2 , aluminum claim 2 , aluminum alloy claim 2 , or any combination thereof.5. The apparatus of claim 1 , wherein the Raman shifting material comprises titanium oxide claim 1 , diamond claim 1 , or any combination thereof.6. The apparatus of claim 1 , further comprising reflective material embedded in or on the substrate.7. The apparatus of claim 1 , further comprising silicon dopants embedded in or on the substrate.8. The apparatus of claim 1 , wherein the Raman shifting material comprises one or more composite particles claim 1 , each composite particle comprising:a first particle, wherein the first particle comprises one of scattering material, Raman shifting material, or reflective material; anda first material disposed against at least a portion of the first particle, wherein the first material comprises one of scattering material, Raman shifting material, or reflective material, further wherein the first particle and the first material comprise different materials.9. An apparatus comprising:a solar cell;a spectral modification layer disposed against at least a portion of the solar ...

Photoelectric conversion device, method of manufacturing the same and photoelectric conversion system

One of disclosed embodiments provides a photoelectric conversion device, comprising a member including a first surface configured to receive light, and a second surface opposite to the first surface, and a plurality of photoelectric conversion portions aligned inside the member in a depth direction from the first surface, wherein at least one of the plurality of photoelectric conversion portions other than the photoelectric conversion portion positioned closest to the first surface includes, on a boundary surface thereof with the member, unevenness having a difference in level larger than a difference in level of unevenness of the photoelectric conversion portion positioned closest to the first surface, and wherein the boundary surface having the unevenness is configured to localize or resonate light incident on the member from a side of the first surface around the boundary surface having the unevenness.

Enhanced thin film solar cell performance using textured rear reflectors

Back reflector arrays are applied to the surface distal to the incident light receiving surface of a thin film solar cell to increase its efficiency by altering the reflected light path and thereby increasing the path length of light through the active layer of the solar cell. The back reflector is an array of features of micrometer proportions. The feature may be concave or convex features such as hemispheres, hemi-ellipsoids, partial-spheres, partial-ellipsoids, or combinations thereof The feature may be pyramidal. A method of forming the back reflector array is by forming an array of features from a photocurable resin, subsequent curing the resin and metalizing the cured resin to render the surface reflective. The photocurable resin can be applied by inkjet printing or rolling or stamping with a mold.

System and Method for Nonlinear Optical Devices

Systems for enhancing the sensitivity of detecting an optical signal using nonlinear optics and method of performing the same. In one embodiment, a single-photon detection system includes an optical amplifier realized in a waveguide, and a photodetector coupled to an output of the optical amplifier. A light detection and ranging system includes the optical amplifier coupled to an optical source and one photodetector. In another embodiment, a photodetection system includes a plurality of optical frequency converters, coupled to an optical source, that sequentially convert a wavelength of photons of the optical source to a final wavelength, and a single-photon photodetector coupled to the optical frequency converters to detect single photons produced by the optical source. In another embodiment, an optical sensor includes an optical pump, and a transducer including an optical ring cavity coupled to the optical pump and configured to utilize optical four-wave mixing to detect an external stimulus. 1. A photodetection system , comprising:a cascaded plurality of optical frequency converters coupled to an optical source, each of said plurality of optical frequency converters being configured to sequentially convert a wavelength of photons of said optical source to a final wavelength; anda single-photon photodetector coupled to said plurality of optical frequency converters to detect single photons produced by said optical source.2. The photodetection system as recited in wherein said plurality of cascaded optical frequency converters are configured to produce photons with wavelengths lying in a monotonic sequence from said wavelength of photons produced by said optical source to a wavelength of a final one of said plurality of optical frequency converters.3. The photodetection system as recited in wherein each of said plurality of optical frequency converters are configured to utilize an optical four-wave mixing process.4. The photodetection system as recited in wherein ...

Optical connection of devices

Optical connectors, adapters, and devices with such are provided. Optical connectors can have a relatively large diameter for the optical interface. For example, optical connectors can include a collector for receiving optical signals at a large opening and providing signals to a photodiode at a small opening of the collector. Such optical connectors with a large diameter for an optical interface can advantageously provide reduced alignment tolerances and/or provide high data rates. Adapters can use a collector to convert optical data signals from a large width fiber to a smaller width fiber. An optical connector can be in a docking station, and lie underneath a bottom surface of a recess in the docking station.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color. 1. A semiconductor device comprising:a light-transmitting substrate;a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers one surface and a part of a side surface of the light-transmitting substrate;a semiconductor element layer over the other surface of the light-transmitting substrate, the other surface being opposite to the one surface;wherein the part of the side surface is curved so that a width of the one surface of the light-transmitting substrate is smaller than a width of the other surface of the light-transmitting substrate, andwherein one of the first light-transmitting resin layer and the second light-transmitting resin layer comprises a chromatic color material.2. A semiconductor device comprising:a light-transmitting substrate comprising a step section, the step section being on one surface of the light-transmitting substrate;a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and a part of a side surface of the light-transmitting substrate;a semiconductor element layer over the other surface of the ...

THIN FILM PHOTOVOLTAIC DEVICES WITH MICROLENS ARRAYS

Textured transparent layers are formed on the incident light receiving surface of thin film solar cells to increase their efficiency by altering the incident light path and capturing a portion of the light reflected at the MLA. The textured transparent layer is an array of lenses of micrometer proportions such as hemispheres, hemi-ellipsoids, partial-spheres, partial-ellipsoids, cones, pyramids, prisms, half cylinders, or combinations thereof. A method of forming the textured transparent layer to the light incident surface of the solar cell is by forming an array of lenses from a photocurable resin and its subsequent curing. The photocurable resin can be applied by inkjet printing or can be applied by roll to roll imprinting or stamping with a mold. 131-. (canceled)32. A thin film solar cell comprising a transparent microlens array (MLA) layer comprising an array of lenses of 1 to 1 ,000 μm in cross-section deposited or formed on an essentially flat transparent surface wherein at least 60% of the flat surface is occupied by the lenses.33. The solar cell of claim 32 , wherein the lenses comprise hemispheres claim 32 , hemi-ellipsoids claim 32 , partial-spheres claim 32 , partial-ellipsoids claim 32 , cones claim 32 , pyramids prisms claim 32 , half cylinders or any combination thereof.34. The solar cell of claim 32 , wherein the lenses are of equal cross-sections.35. The solar cell of claim 32 , wherein the lenses are of a plurality of cross-sections.36. The solar cell of claim 32 , wherein the MLA layer comprises a photo-cured resin or a thermal-cured resin.37. The solar cell of claim 32 , wherein the MLA layer comprise TiOnanoparticles claim 32 , ZrOnanoparticles claim 32 , CeOnanoparticles claim 32 , lead zirconate tinate (PZT) nanoparticles claim 32 , or any other nanoparticles of high index of refraction claim 32 , alone or in combination.38. The solar cell of claim 32 , wherein the solar cell comprises at least one active layer of the solar cell comprises ...

PHOTO DETECTOR AND INTEGRATED CIRCUIT

The photo detector () comprises a photo transistor (). The photo transistor has a light sensitive region () for controlling the transistor action of the photo transistor. The photo detector further comprises a dielectric layer (). The dielectric layer is in contact with the photo transistor. The photo detector further comprises a grating pattern () in contact with the dielectric layer. The grating layer and the dielectric layer are adapted for focusing electromagnetic radiation in the light sensitive region. 115-. (canceled)16. An integrated circuit , comprising: a photo transistor having a light sensitive region in the first level that controls switching of the photo transistor;', 'a dielectric layer in contact with the photo transistor; and', 'a grating pattern in contact with the dielectric layer, wherein the grating pattern and the dielectric layer are configured to focus electromagnetic radiation in the light sensitive region, wherein the second level comprises electrical circuitry that forms at least a portion of the grating pattern., 'at least a substrate, a second level and a first level intermediate the substrate and the second level, wherein the integrated circuit includes a photo detector including17. The integrated circuit of claim 16 , wherein:the grating pattern comprises a sub-wavelength grating; andthe sub-wavelength grating is configured to form standing electromagnetic waves focused on the light sensitive region.18. The integrated circuit of claim 16 , wherein:the photo detector further comprises a light guide; andthe grating pattern and the dielectric layer are configured to focus electromagnetic radiation transmitted by the light guide in the light sensitive region.19. The integrated circuit of claim 16 , wherein:the photo transistor includes a silicon channel having a first dielectric constant; andthe photo detector further comprises a substrate having a second dielectric constant that is less than the first dielectric constant.20. The ...

METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR

Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor. 1. A method for forming a semiconductor device , the method comprising:providing a device substrate having a frontside and a backside defined thereupon, the backside opposite the frontside, the device substrate further having a plurality of pixels formed at the frontside;forming a color filter layer and one or more microlenses on the backside of the device substrate;forming a dam structure on the backside of the device substrate; andcoupling a backside substrate to the dam structure, wherein the backside substrate is coupled to the dam structure to define a cavity surrounding the color filter layer and the one or more microlenses.2. The method of claim 1 , further comprising: forming an interconnect structure disposed over and coupled to the frontside of the device substrate; and', 'coupling a glass substrate to the interconnect structure,, 'prior to the forming of the color filter layer and the one or more microlenses and prior to the forming of the dam structurewherein the forming of the color filter layer and the one or more microlenses, the forming of the dam structure, and the coupling of the backside substrate are performed using the glass substrate.3. The method of claim 2 , further comprising:forming a redistribution layer disposed over and electrically coupled to the interconnect structure.4. The method of claim 3 , wherein the forming of the redistribution layer ...

Photovoltaic Cell Having a Structured Back Surface and Associated Manufacturing Method

The invention relates to a photovoltaic cell () which includes at least one wafer () of a semi-conductor material, with a front surface () intended for receiving incident light and a back surface () opposite said front surface, as well as to methods for manufacturing said photovoltaic cell. The back surface () includes an electric contact () and a structure (), referred to as an optical structure, which is discrete and capable of redirecting the incident light towards the core of the wafer. 121. A photovoltaic cell comprising at least one wafer of semi-conductive material , with a front face () configured to receive the incident light and a rear face , opposite said front face , wherein the rear face comprises an electrical contact and an optical structure , which is discrete and capable of redirecting the incident light toward the core of the wafer , said optical structure being made of an oxide of silicon , silicon nitride , possibly hydrogen-enriched , silicon carbide , alumina an oxide of aluminum , titanium dioxide , titanium nitride , magnesium fluoride , tantalum anhydride , graphite or porous silicon.2. The photovoltaic cell as claimed in claim 1 , in which the thickness of the wafer of semi-conductive material is between 10 μm and 200 μm.3. The photovoltaic cell as claimed in claim 1 , in which the optical structure exhibits a periodic structuring of patterns claim 1 , these patterns thus forming a diffraction grating for the incident light.4. The photovoltaic cell as claimed in claim 3 , in which the pitch of the patterns of the optical structure is between 300 nm and 2 μm claim 3 , in both directions of the plane formed by the rear face of the wafer of semi-conductive material.5. The photovoltaic cell as claimed in claim 3 , in which the width of the patterns of the optical structure is between 100 nm and 2 μm.6. The photovoltaic cell as claimed in claim 3 , in which the height of the patterns of the optical structure is between 20 nm and 5 μm.7. The ...

Solid-state imaging device

A solid-state imaging device includes: a plurality of pixel cells; and column signal lines. Each of the pixel cells includes: a photoelectric conversion film, a pixel electrode, a transparent electrode, an amplifier transistor, a reset transistor, and an address transistor. The solid-state imaging device further includes: a lower-refractive-index transparent layer formed above the transparent electrode; and higher-refractive-index transparent parts embedded in the lower-refractive-index transparent layer and each having a refractive index higher than a refractive index of the lower-refractive-index transparent layer. Each of the higher-refractive-index transparent parts separates light passing through the higher-refractive-index transparent part into zero-order diffracted light, first-order diffracted light, and negative-first-order diffracted light which exit the higher-refractive-index transparent part and travel toward the photoelectric conversion film.

RADIATION IMAGE PICKUP APPARATUS, RADIATION IMAGE PICKUP SYSTEM, AND METHOD FOR MANUFACTURING RADIATION IMAGE PICKUP APPARATUS

The present invention provides a radiation image pickup apparatus in which one or more image pickup elements are easily exchanged. 1. A radiation image pickup apparatus comprising:a base;at least one image pickup element including a plurality of pixels, each of which has a sensor portion converting light into a charge;a scintillator arranged on the image pickup element at a side opposite to the base;a first heat peelable adhesive layer which is arranged between the base and the image pickup element and which fixes the base and the image pickup element; anda second heat peelable adhesive layer which is arranged between the image pickup element and the scintillator and which fixes the image pickup element and the scintillator,wherein the first heat peelable adhesive layer contains first heat-expandable microspheres, the second heat peelable adhesive layer contains second heat-expandable microspheres, and the first heat-expandable microspheres have a different expansion starting temperature from that of the second heat-expandable microspheres.2. The radiation image pickup apparatus according to claim 1 , wherein the expansion starting temperature of the first heat-expandable microspheres is different from that of the second heat-expandable microspheres by 20 degrees or more.3. The radiation image pickup apparatus according to claim 1 , wherein the expansion starting temperature of the second heat-expandable microspheres is lower than that of the first heat-expandable microspheres.4. The radiation image pickup apparatus according to claim 1 , wherein the pixels are arranged at a pixel pitch P claim 1 , and the average particle diameter of the second heat-expandable microspheres is smaller than the pixel pitch P.5. The radiation image pickup apparatus according to claim 4 , wherein the average particle diameter of the second heat-expandable microspheres is 50 micrometers or less claim 4 , and the thickness of the second heat peelable adhesive layer is in a range of 1 to ...

PHOTONIC ENERGY CONCENTRATORS WITH STRUCTURAL FOAM

Apparatus and methods related to photonic energy are provided. A device includes a reflector bearing a surface treatment and defining one or more photonic energy-concentrating areas. Target entities such as photovoltaic cells or thermal absorption conduits are disposed at the respective photonic energy-concentrating locations. A transparent cover can be used to protect the reflector. A foam material characterized by structural rigidity is disposed between and in contact with the backside of the reflector and a support housing. The assembled device resists bending, twisting or other deformation by virtue of the rigidity of the foam material. 1. A device , comprising:a reflector to concentrate incident photonic energy onto a target location;a housing disposed about a backside of the reflector such that an interstitial volume is defined; anda foam material within the interstitial volume and in contact with the housing and the backside portion of the reflector, the device characterized by a structural rigidity by virtue of the foam material.2. The device according to further comprising a photovoltaic cell disposed at the target location.3. The device according to claim 1 , the reflector formed from a thermoplastic claim 1 , the reflector including a front side having a reflective or dichroic surface treatment thereon.4. The device according to claim 1 , the housing formed from a thermoplastic.5. The device according to further comprising a transparent cover disposed over the reflector and in contact with the housing.6. The device according to claim 1 , the reflector formed to define a parabolic trough so as to concentrate incident photonic energy onto a strip-like target location.7. The device according to claim 1 , the reflector defined by a first parabolic curvature and a second parabolic curvature orthogonal to the first parabolic curvature so as to concentrate incident photonic energy onto a spot-like target location.8. The device according to further comprising a ...

MONOLITHIC PHOTOVOLTAIC SOLAR CONCENTRATOR

A photovoltaic solar collector and concentrator apparatus consists of a solid, one-piece, sun light transmitting, non-imaging optical element coupled to a photovoltaic cell. The photovoltaic solar collector and concentrator has an entry surface including focusing elements and an opposed surface including uncoated reflector elements. The focused sun light is directed by the reflector elements via total internal reflection directly towards the photovoltaic cell without any reflection from the entry surface. An additional redirecting element based on total internal reflection and integral with the collector and concentrator optical element is used to couple the sunlight from the reflector elements to a photovoltaic cell positioned in plane parallel to the entry surface. 1. A photovoltaic solar collector and concentration apparatus comprising:a non-imaging solar concentrator consisting of a solid, one-piece, light transmitting component having (i) an input surface including a plurality of sunlight collecting and focusing elements (ii) a stepped surface opposed to the input surface defining a series of sunlight reflectors corresponding to the focusing elements, and (iii) a concentrated light output surface; anda photovoltaic solar cell optically coupled to the concentrator and wherein the impinging sunlight received by the focusing elements within an angle of acceptance is focused onto the light reflectors positioned to direct the focused sunlight therefrom towards the photovoltaic solar cell via total internal reflection either (a) directly and without an additional reflection from the input surface or (b) indirectly via an additional optical redirecting element.2. The apparatus of claim 1 , wherein the reflectors do not have a mirror coating.3. The apparatus of claim 1 , wherein the focusing elements are made of a material chosen from glass and plastic.4. The apparatus of claim 1 , wherein the optical element is made of a plastic chosen from acrylic claim 1 , silicone ...

RADIATION DETECTOR

[Problems to be Solved] A radiation detector, which is improved in the detection efficiency of a photodetector for light emitted by a scintillator, which has excellent long-term operational stability, and which is excellent in time resolution and count rate characteristics, is provided with the use of the scintillator with a short fluorescence lifetime. 1. A radiation detector having an optical wavelength conversion layer formed between a scintillator composed of a fluoride crystal and a photodetector , the optical wavelength conversion layer being composed of an organic fluorescent substance , wherein a peak wavelength of light emitted by the scintillator is 360 nm or less , and a peak wavelength of light after conversion by the optical conversion layer is 400 nm or more.2. The radiation detector according to claim 1 , wherein refractive indexes of the scintillator and the optical wavelength conversion layer are both 1.35 to 1.65.3. The radiation detector according to claim 1 , wherein the optical wavelength conversion layer is composed of the organic fluorescent substance using polyvinyltoluene as abase material.4. The radiation detector according to claim 1 , wherein the scintillator is composed of a fluoride crystal containing at least one element selected from Ce claim 1 , Pr and Nd.5. The radiation detector according to claim 4 , wherein the scintillator is composed of a LiABFcrystal (where A represents at least one element selected from Mg claim 4 , Ca claim 4 , Sr and Ba claim 4 , and B represents at least one element selected from Al and Ga) containing the at least one element included among Ce claim 4 , Pr and Nd.6. The radiation detector according to claim 5 , wherein the scintillator is composed of a Ce-containing LiCaSrAlFcrystal (where x denotes a numerical value of 0 to 1). This invention relates to a radiation detector equipped with a scintillator. More specifically, the invention relates to a radiation detector which is excellent in time resolution ...

CONVERTER MATERIAL FOR SOLAR CELLS

The invention relates to an converter material for solar cells using Sm. 1. Converter material for solar cells comprising a Smdoped inorganic material , whereby the converter material has a band gap of ≧4.5 eV.2. The converter material for solar cells of claim 1 , whereby the converter material for solar cells is selected from the group comprising oxidic claim 1 , nitridic claim 1 , oxidonitridic claim 1 , boridic claim 1 , borate claim 1 , phosphate materials and mixtures thereof3. The converter material for solar cells of claim 1 , whereby the converter material is selected from the group comprising alkaline and/or earth alkaline containing materials.4. (canceled)5. The converter material for solar cells of whereby the emission of the converter material has a decay time of ≧50 μs.6. The converter material for solar cells of claim 1 , whereby the undoped material is a non-coloured material which is coloured when doped with Sm.7. The converter material for solar cells of claim 1 , whereby the converter material comprises an earth-alkaline borate.8. (canceled)9. Solar cell comprising a converter material according to .10. Solar cell of claim 9 , whereby the converter material is provided in the form of nanoparticles. The present invention is directed to converter materials for solar cellsState of the art solar cells cannot achieve the theoretical efficiency (as determined by the so-called “Shockley-Queisser” limit) for various reasons. Therefore many attempts have been made to increase the efficiency of Solar cells by either varying the solar cell material or addition of further components etc. Alternatively, the cost of solar cells can be reduced by the use of solar energy concentrators. Both measures have the potential to increase the use of solar cells as the costs per Wp decrease.One strategy for the increase of solar cells is the introduction of converter materials which (most desirably) have a broadband absorption and line emission in desired wavelength areas. ...

OPTO-ELECTRICAL DEVICES INCORPORATING METAL NANOWIRES

The present disclosure relates to OLED and PV devices including transparent electrodes that are formed of conductive nanostructures and methods of improving light out-coupling in OLED and input-coupling in PV devices. 1. An optical stack comprising:a first electrode;an organic stack underlying the first electrode;a nanostructure layer underlying the organic stack, the nanostructure layer comprises a plurality of metal nanostructures;a high-index layer underlying the nanostructure layer; anda substrate underlying the high-index layer, wherein the high-index layer has the same or a higher refractive index than the organic layer, and wherein the nanostructure layer forms a second electrode.2. The optical stack of wherein the nanostructure layer comprises a high-index matrix claim 1 , wherein the high-index matrix has the same or a higher refractive index than the organic layer.3. The optical stack of wherein the nanostructure layer comprises a low-index matrix claim 1 , wherein the low-index matrix has a lower refractive index than the organic layer.4. The optical stack of wherein claim 1 , when waveguided light within the optical stack is represented by an energy density distribution curve claim 1 , the nanostructure layer is positioned such that it overlaps with at least 10% of the energy density distribution curve.5. An optical stack comprising:a first electrode;an organic stack underlying the first electrode;a nanostructure layer underlying the organic stack, the nanostructure layer comprises a plurality of metal nanostructures; anda substrate supporting the first electrode, organic stack and nanostructure layer,wherein an energy density of light that would be waveguided in the optical stack without the nanostructure layer is reduced by inclusion of the nanostructure layer in the optical stack.6. The optical stack of further including a high-index layer below the nanostructure layer claim 5 , the high-index layer has the same or a higher refractive index than the ...

Photoelectric conversion element

A photoelectric conversion element ( 1 ) of the present invention includes: a photoelectric conversion layer ( 2 ); and a photonic crystal provided inside the photoelectric conversion layer ( 2 ) to provide a photonic band gap, the photonic crystal being designed such that nanorods ( 30 ) whose refraction index is smaller than that of a medium of the photoelectric conversion layer ( 2 ) are provided periodically inside the photoelectric conversion layer ( 2 ), and there are provided defects ( 31 ) to provide a defect level in the photonic band gap, when a wavelength of a resonance peak corresponding to the defect level is λ, the nanorods ( 30 ) are provided two-dimensionally with a pitch of not less than λ/7 and not more than λ/2, and a coefficient κ V indicative of strength of coupling between the photonic crystal and the outside is substantially equal to a coefficient α of absorption of light by the photoelectric conversion layer ( 2 ).

TRANSPARENT FRONT ELECTRODE FOR A PHOTOVOLTAIC DEVICE

A transparent front electrode for a photovoltaic device comprising at least the following layers in sequence: —a glass substrate; —a lower anti-reflection layer, comprising in sequence from the glass substrate *a base layer of an (oxi)nitride of silicon and/or an (oxi)nitride of aluminium, *a middle layer of an oxide of Zn and Sn, *a top layer of an oxide of Zn; —a silver-based functional layer; and —an upper anti-reflection layer comprising in sequence from the silver-based functional layer *a first barrier layer of an oxide of Ni and Cr, *a second barrier layer of an Al-doped oxide of Zn, and *a buffer layer; wherein the first barrier layer of an oxide of Ni and Cr is located directly in contact with the silver-based functional layer or the first barrier layer of an oxide of Ni and Cr is separated from the silver-based functional layer by one or more additional barrier layers. 119-. (canceled)21. The electrode according to claim 20 , wherein the base layer of an (oxi)nitride of silicon and/or an (oxi)nitride of aluminium has a thickness of from 15 to 55 nm.22. The electrode according to claim 20 , wherein the middle layer of an oxide of Zn and Sn has a thickness of from 3 to 12 nm.23. The electrode according to claim 20 , wherein the middle layer of an oxide of Zn and Sn is located directly on the base layer of an (oxi)nitride of silicon and/or an (oxi)nitride of aluminium.24. The electrode according to claim 20 , wherein the top layer of an oxide of Zn has a thickness of from 3 to 12 nm.25. The electrode according to claim 20 , wherein the silver-based functional layer has a thickness of from 5 to 11 nm.26. The electrode according to claim 20 , wherein the first barrier layer of an oxide of Ni and Cr has a thickness of from 0 to 3 nm.27. The electrode according to claim 20 , wherein the second barrier layer of an Al-doped oxide of Zn in the upper anti-reflection layer has a thickness of from 0.5 to 20 nm.28. The electrode according to claim 20 , wherein said ...

METHOD FOR PREPARING AN N+PP+ OR P+NN+ STRUCTURE ON SILICON WAFERS

The present invention relates to a method for preparing, on a silicon wafer, an n+pp+ or p+nn+ structure which includes the following consecutive steps: a) on a p or n silicon wafer (), which includes a front surface () and a rear surface (), a layer of boron-doped silicon oxide (BSG) () is formed on the rear surface () by PECVD, followed by a SiOdiffusion barrier (); b) a source of phosphorus is diffused such that the phosphorus and the boron co-diffuse and in order also to form: on the front surface () of the wafer obtained at the end of step a), a layer of phosphorus-doped silicon oxide (PSG) () and an n+ doped area (); and on the rear surface of the wafer obtained at the end of step a), a boron-rich area (BRL) (), as well as a p+ doped area (); c) the layers of BSG () and PSG () oxides and SiO() are removed, the BRL () is oxidised and the layer resulting from said oxidation is removed. The invention also relates to a silicon wafer having an n+pp+ or p+nn+ structure, which can be obtained by said preparation method, as well as to a photovoltaic panel manufactured from such a silicon wafer. 1. A method for preparing a structure of type npp or type pnn on a silicon wafer , comprising the following successive steps.a) On a silicon wafer of type p or type n which comprises a front surface and a back surface, PECVD is conducted to form on a back surface a layer of boron-doped silicon oxide (BSG), then a barrier layer against SiOx diffusion. [ a phosphorus-doped silicon oxide layer (PSG),', {'sup': '+', 'a n doped region'}], 'on the front surface of the wafer obtained after step a), a boron rich layer (BRL), and', {'sup': '+', 'a p doped region.'}], 'and on the back surface of the wafer obtained after step a)], 'b) A phosphorus source is diffused so that the phosphorus and boron co-diffuse and so as also to formc) The BSG, PSG and SiOx layers are removed, the BRL is oxidized and the layer resulting from this oxidation is removed.2. The preparation method according to ...

THIN-FILM SOLAR CELL

A thin-film solar cell product, including: 1. A thin-film solar cell product , including:a thin film semiconductor having one or more solar cells formed therein, the solar cells having a front surface for receiving incident sunlight, and a rear surface;at least one reflective layer to reflect light that has passed through the thin film semiconductor without having been absorbed therein; anda scattering layer including broadband scattering particles configured to scatter light incident upon the scattering layer to increase the absorption of the light in the solar cells.2. The solar cell product of claim 1 , wherein the scattering layer is between the thin film semiconductor and the reflective layer.3. The solar cell product of claim 1 , wherein the particles each includes:a central core; anda plurality of truncated sub-particles on the core.4. The solar cell product of claim 1 , wherein the scattering layer includes a dielectric material claim 1 , the broadband scattering particles being embedded within the dielectric material.5. The solar cell product of claim 1 , wherein the broadband scattering particles scatter a portion of the light transmitted through the thin film semiconductor.6. The solar cell product of claim 1 , including a substrate to support the thin film semiconductor.7. A method of manufacturing a thin film solar cell product claim 1 , including forming a scattering layer having broadband scattering particles therein claim 1 , the broadband scattering particles being configured to scatter light incident upon the scattering layer to increase the absorption of the light in one or more solar cells of the thin film solar cell product.8. The method of claim 7 , wherein the scattering layer is formed between a thin film semiconductor and a reflective layer so that the scattering layer receives a portion of the sunlight that is transmitted through the thin film semiconductor.9. The method of claim 7 , wherein the scattering layer includes a dielectric ...

WAFER LEVEL PACKAGING, OPTICAL DETECTION SENSOR AND METHOD OF FORMING SAME

An optical detection sensor and method of forming same. The optical detection sensor be a proximity detection sensor that includes an optical system and a selectively transmissive structure. Electromagnetic radiation such as laser light can be emitted through a transmissive portion of the selectively transmissive structure. A reflected beam can be detected to determine the presence of an object. 1. An optical detection apparatus , comprising:a device configured to emit electromagnetic radiation;a structure including a first region of transmissive material to allow a first portion of the electromagnetic radiation to pass through the first region to an exterior of the optical detection apparatus, the structure being configured to reflect a second portion of the electromagnetic radiation; anda sensor configured to detect the second portion of the electromagnetic radiation.2. The optical detection apparatus of claim 1 , wherein the first region is configured to reflect the second portion of the electromagnetic radiation.3. The optical detection apparatus of claim 2 , wherein the first region has a first surface that receives the electromagnetic radiation and allows the first and second portions of the electromagnetic radiation to pass therethrough claim 2 , wherein the first region has a second surface that reflects the second portion of the electromagnetic radiation.4. The optical detection apparatus of claim 2 , wherein the first region has an L-shape.5. The optical detection apparatus of claim 1 , wherein the sensor is a first sensor and the structure further includes a second sensor claim 1 , the second sensor being configured to detect the first portion of the electromagnetic radiation claim 1 , the first portion of the electromagnetic radiation being reflected from an object at an exterior of the optical detection sensor.6. The optical detection apparatus of claim 5 , wherein the structure further comprises an opaque region separating the device and the second ...

IMAGE PICKUP APPARATUS AND IMAGE PICKUP APPARATUS MANUFACTURING METHOD

An image pickup apparatus includes: an image pickup device disposed in a first principal surface of a silicon substrate, the image pickup device sensing infrared light; an electrode pad disposed on the first principal surface; a front-face wiring connecting the image pickup device and the electrode pad; an external connection terminal disposed on a second principal surface of the silicon substrate; a back-face wiring connecting the electrode pad and the external connection terminal via a substrate through-hole extending from the second principal surface side through the silicon substrate to a back face of the electrode pad; and a light blocking layer disposed on the second principal surface, the light blocking layer covering a trench portion surrounding the image pickup device and a region surrounded by the trench portion. 1. An image pickup apparatus comprising:a semiconductor substrate including a first principal surface and a second principal surface, the semiconductor substrate transmitting infrared light;an image pickup device disposed in the first principal surface, the image pickup device including an image pickup section that senses visible light and the infrared light;an electrode pad disposed on the first principal surface;a front-face wiring disposed on the first principal surface, the front-face wiring connecting the image pickup device and the electrode pad;an external connection terminal disposed on the second principal surface;a back-face wiring disposed on the second principal surface, the back-face wiring connecting the electrode pad and the external connection terminal via a substrate through-hole extending from the second principal surface through the semiconductor substrate to a back face of the electrode pad; anda light blocking layer disposed on the second principal surface, the light blocking layer covering a frame-like trench portion surrounding a region of the second principal surface, the region facing the image pickup section, and the ...

SOLAR CELL MODULE, AND SOLAR PHOTOVOLTAIC DEVICE WITH SAME

A solar cell module () includes a solar cell (), a fluorescent light collecting plate (), and reflection plates (). The fluorescent light collecting plate () faces a light receiving surface through which external light () such as sunlight or illumination light enters the fluorescent light collecting plate (). The solar cell () is provided to at least one of the end surfaces (intersecting surfaces each intersecting the light receiving surface) of the fluorescent light collecting plate (). To the other end surfaces of the fluorescent light collecting plate (), the reflection plates () are provided. The end surfaces of the fluorescent light collecting plate (), to which end surfaces no solar cell () is provided, are arranged so as not to be parallel to each other. Therefore, light guided to any of the end surfaces to which no the solar cell () is provided is reflected by the reflection plate () on that end surface, and finally reaches the solar cell () where the light is used for power generation. 1. A solar cell module comprising:a light collecting plate which (i) has a light receiving surface and a plurality of intersecting surfaces each of which intersects the light receiving surface and (ii) contains a fluorescent material; anda solar cell which is provided to at least one of the plurality of intersecting surfaces,a reflection plate being provided to intersecting surfaces other than said at least one of the plurality of intersecting surfaces to which the solar cell is provided, andthe intersecting surfaces to which the reflection plate is provided extending in respective directions that intersect each other.2. The solar cell module as set forth in claim 1 , wherein said at least one of the plurality of intersecting surfaces to which the solar cell is provided includes an intersecting surface whose portion intersecting the light receiving surface of the light collecting plate is the shortest in length of those of the plurality of intersecting surfaces.3. The solar ...

SOLAR CELL MODULE AND LIGHT CONTROL SHEET FOR SOLAR CELL MODULE

A solar cell module includes a panel of transparent material that transmits sunlight, a panel of heat-conducting material arranged opposite to the sunlight incidence side, a light transmitting elastomer member, and a solar cell element. The light transmitting elastomer member and the solar cell element is interposed between the panel of transparent material and the panel of heat-conducting material, with the light transmitting elastomer member being disposed on the sunlight incidence side. The light-transmitting elastomer member presses the solar cell element against the panel of heat-conducting material. By altering the optical path of the direct incident light with the refractive action of the light transmitting elastomer, the solar cell module allows the finger electrodes and/or bus bar electrodes of the solar cell element to be placed in the region where there is less incident sunlight than the region where there is direct incident sunlight not affected by refractive action. 1. A solar cell module composed of a panel of transparent material that transmits sunlight , a panel of heat-conducting material arranged opposite to the sunlight incidence side , a light transmitting elastomer member , and a solar cell element , said light transmitting elastomer member and said solar cell element being interposed between said panel of transparent material and said panel of heat-conducting material , with said light transmitting elastomer member being disposed on the sunlight incidence side , in such a way that said light-transmitting elastomer member presses said solar cell element against said panel of heat-conducting material , wherein said light transmitting elastomer member includes a plurality of small pieces joined together , at least whose light incidence plane has a semicircular cross section , semielliptic cross section , or half-racetrack-like cross section with round sides , and said small pieces are formed such that the finger electrodes and/or bus bar ...

WAVELENGTH CONVERSION TYPE PHOTOVOLTAIC CELL SEALING MATERIAL AND PHOTOVOLTAIC CELL MODULE

A wavelength conversion type photovoltaic cell sealing material according to the present invention includes a first sealing layer that contains no fluorescent substance and a second sealing layer that contains a fluorescent substance. This wavelength conversion type photovoltaic cell sealing material is used as one of the light transmissive layers of a photovoltaic cell module and is disposed at a light receiving surface side of a solar cell. 1. A wavelength conversion type photovoltaic cell sealing material comprising:a first sealing layer that contains no fluorescent substance; anda second sealing layer that contains a fluorescent substance.2. The wavelength conversion type photovoltaic cell sealing material according to claim 1 , wherein the fluorescent substance is a europium complex.3. The wavelength conversion type photovoltaic cell sealing material according to claim 1 , wherein the fluorescent substance is contained in a resin particle with a vinyl compound as a monomer compound.4. A photovoltaic cell module comprising:a solar cell; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the wavelength conversion type photovoltaic cell sealing material according to , disposed at a light-receiving surface side of the solar cell.'}5. The wavelength conversion type photovoltaic cell sealing material according to claim 2 , wherein the fluorescent substance is contained in a resin particle with a vinyl compound as a monomer compound.6. A photovoltaic cell module comprising:a solar cell; and{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'the wavelength conversion type photovoltaic cell sealing material according to , disposed at a light-receiving surface side of the solar cell.'}7. A photovoltaic cell module comprising:a solar cell; and{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'the wavelength conversion type photovoltaic cell sealing material according to , disposed at a light-receiving surface side of the solar cell.'}8. A photovoltaic cell module ...

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

A semiconductor package is provided, including a silicon-containing substrate, a photo-sensor chip disposed on the silicon-containing substrate, a plurality of conductive lines electrically connected to the silicon-containing substrate and the photo-sensor chip, an encapsulating layer encapsulating the photo-sensor chip and the conductive lines, and a colloid lens disposed on the encapsulating layer. With the photo-sensor chip stacked on the silicon-containing substrate, a circuit board may have a reduced region that is occupied by the semiconductor package. A method of fabricating the semiconductor package is also provided. 1. A semiconductor package , comprising:a silicon-containing substrate;a photo-sensor chip disposed on the silicon-containing substrate;a plurality of conductive lines electrically connected to the silicon-containing substrate and the photo-sensor chip;an encapsulating layer formed on the silicon-containing substrate and encapsulating the photo-sensor chip and the conductive lines; anda colloid lens disposed on the encapsulating layer.2. The semiconductor package of claim 1 , further comprising a plurality of conductive pads disposed on the silicon-containing substrate claim 1 , and a plurality of electrode pads disposed on the photo-sensor chip claim 1 , wherein the conductive lines are connected to the conductive pads and the electrode pads and electrically connected to the silicon-containing substrate and the photo-sensor chip.3. The semiconductor package of claim 1 , wherein the photo-sensor chip has a photo-sensor region corresponding in position to the colloid lens.4. The semiconductor package of claim 1 , further comprising a through silicon via penetrating the silicon-containing substrate.5. The semiconductor package of claim 4 , further comprising a redistribution layer formed on a side of the silicon-containing substrate where the photo-sensor chip is not disposed and electrically connected to the through silicon via.6. The ...

SOLID STATE IMAGING DEVICE

A CCD image sensor, being a solid state imaging device, has four types of pixels, first to fourth pixels. The first to fourth pixels are arranged in a predetermined pattern. Each of the pixels has a PD and a microlens. Each of the microlens is arranged with its optical axis center eccentric or shifted in a predetermined direction from a center of a light receiving surface of the PD. A part of the microlens overlaps one or more adjacent pixels. 1. A solid state imaging device having a plurality of phase difference detection pixels arranged adjacent to each other , the phase difference detection pixel comprising:a photoelectric converter for photoelectrically converting incident light into charge and accumulating the charge; anda microlens provided to the each photoelectric converter, an optical axis of the microlens being eccentric to a center of the photoelectric converter such that a part of the microlens overlaps the adjacent phase difference detection pixel, the microlens condensing the light onto the photoelectric converter.2. The solid state imaging device of claim 1 , the phase difference detection pixels including:a first pixel with the microlens arranged eccentrically in a predetermined eccentricity direction;a second pixel with the microlens arranged eccentrically opposite to the eccentricity direction;a third pixel with the microlens arranged eccentrically in an orthogonal direction substantially orthogonal to the eccentricity direction; anda fourth pixel with the microlens arranged eccentrically opposite to the orthogonal direction.3. The solid state imaging device of claim 2 , further including:first pixel rows and second pixel rows, the each first pixel row having the first pixels and the second pixels arranged alternately in a predetermined direction, the each second pixel row having the third pixels and the fourth pixels arranged alternately in the same direction as the predetermined direction,wherein the first and second pixel rows are arranged ...

IMAGE PICKUP APPARATUS, ENDOSCOPE AND IMAGE PICKUP APPARATUS MANUFACTURING METHOD

An image pickup apparatus includes: a cover glass portion having a function of a right angle prism; an image pickup device substrate portion including an image pickup device on a first principal surface and a back-face electrode on a second principal surface, the back-face electrode being connected to the image pickup device via a through-wiring; and a bonding layer that bonds the cover glass portion and the image pickup device substrate portion that have a same outer dimension. 1. An image pickup apparatus comprising:a transparent substrate portion including an optical path conversion element function portion;an image pickup device substrate portion including an image pickup device on a first principal surface and a back-face electrode on a second principal surface, the back-face electrode being connected to the image pickup device via a wiring portion; anda bonding layer that bonds the transparent substrate portion and the image pickup device substrate portion that have a same outer dimension.2. The image pickup apparatus according to claim 1 , wherein the transparent substrate portion includes a perpendicular surface perpendicular to the first principal surface and an inclined surface inclined relative to the first principal surface claim 1 , and the inclined surface includes a reflective surface of the optical path conversion element function portion.3. The image pickup apparatus according to claim 2 , wherein the optical path conversion element function portion includes a right angle prism claim 2 , the inclined surface of which is inclined by 45 degrees relative to the first principal surface.4. The image pickup apparatus according to claim 3 , wherein the image pickup apparatus is manufactured by wafer-level chip-size packaging.5. The image pickup apparatus according to claim 4 , wherein a reflective film is provided on the inclined surface.6. An endoscope comprising:an image pickup optical system including a plurality of lens portions;an image pickup ...

PHOTOVOLTAIC CELL DEVICE WITH SWITCHABLE LIGHTING/REFLECTION

The present invention relates to a photovoltaic cell device with combined energy conversion and lighting option and a method a controlling such a device. It comprises a responsive element, a reflector or a light source for changing light absorption and thus appearance of photovoltaic cells (e.g. solar panel). It is also possible to combine the responsive element or the reflector with light source(s) providing extra illumination. When combined with a sensor and control unit, ambient intelligent solar panels and ambient intelligent lighting systems can be obtained. A combination of a luminescent solar concentrator (LSC) and light-emitting device is also possible, where an energy storage device is charged by a photovoltaic cell upon irradiation. The energy storage powers one or more light sources which are coupled to the sides of the luminescent plate. The light emitted by the light sources is coupled into the plate and (partly) converted by the luminescent plate. This results in a plate that homogeneously emits light. 1. A photovoltaic cell device comprising:at least one photovoltaic cell for converting light energy received by said photovoltaic cell device into electrical energy; andat least one light emitting or reflecting element adapted to switchably convert electrical energy into light energy or to switchably reflect at least a portion of said light energy received by said photovoltaic cell device before it has reached said at least one photovoltaic cell;wherein said photovoltaic cell device is adapted to provide a first operation mode in which said at least one light emitting or reflecting element is active, and a second operation mode in which said at least one light emitting or reflecting element is not active while said at least one photovoltaic cell is active.2. Device according to claim 1 ,further comprising a solar concentrator for directing said received light energy towards said at least one photovoltaic cell, wherein said at least one light emitting or ...

PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF

In a photovoltaic device, a second electrode includes an Al-based electrode that is connected to an other surface side of a substrate by being embedded in openings on the other surface side of the substrate, and an Ag-based electrode that is provided in a region between the openings on the other surface side of the substrate and is electrically connected to the other surface side of the substrate by at least a part thereof penetrating a back surface insulating film, and a sum of an area of the Ag-based electrode in a plane of the substrate and an area of a peripheral region, which is obtained by extending a pattern of the Ag-based electrode by a diffusion length of a carrier outward in a plane of the substrate, is 10% or less of an area on the other surface side of the substrate. 122-. (canceled)23. A photovoltaic device comprising:a first conductivity-type semiconductor substrate that includes an impurity diffusion layer in which a second conductivity-type impurity element is diffused on one surface side;an anti-reflective film formed on the impurity diffusion layer;a first electrode that penetrates the anti-reflective film and is electrically connected to the impurity diffusion layer;a back surface insulating film that includes a plurality of openings that reach an other surface side of the semiconductor substrate and is formed on the other surface side of the semiconductor substrate;a second electrode that is formed on the other surface side of the semiconductor substrate; anda back surface reflective film that is formed to cover at least the back surface insulating film and is made of metal, whereinthe second electrode includes an aluminum-based electrode that is made of a material including aluminum and is connected to the other surface side of the semiconductor substrate by being embedded in at least the openings on the other surface side of the semiconductor substrate, and a silver-based electrode that is made of a material including silver, that is provided ...

Optical Trapping For Fiber Illumination

A light collection and light guidance system including: a flat collecting sheet having a first roughened light receiving front surface; and a plurality of optical fibers attached to at least one edge of the flat collecting sheet, wherein the first roughened light receiving front surface of the sheet has a plurality of resonance coupling periodicities, a plurality of correlation lengths, or a combination thereof. Also disclosed is a method of light collection and light guidance using the aforementioned system, or a system including a flat collecting sheet and a solar converter, as defined herein.

NONLINEAR OPTICAL AND ELECTRO-OPTICAL DEVICES AND METHODS OF USE THEREOF FOR AMPLIFICATION OF NON-LINEAR PROPERTIES

This invention provides devices and methods for broad-band amplification of non linear properties. This invention provides devices comprising optically non linear material that is in contact with a slit array. The slit array causes enhancement of the electromagnetic field within the non linear materials. The enhancement of the electromagnetic field within the optically non linear material results in an amplified non linear response exhibited by the optically non linear materials. This invention provides detectors and imaging systems based on devices and methods of this invention. 1. An optical device comprising a grating , said grating comprising a slit array , and one or more dielectric layers , wherein at least one of said layers comprise non linear material and said layers are positioned on top of said grating , below said grating or on top and below said grating and wherein said layer(s) has no significant linear absorption at a certain wavelength range of the electromagnetic radiation spectrum.2. The device of claim 1 , wherein said dielectric layers comprise GaAs claim 1 , AlGaAs claim 1 , Si claim 1 , silicon dioxide claim 1 , Quartz claim 1 , Ge claim 1 , GaN claim 1 , GaAlN claim 1 , InGaAs claim 1 , InGaP or a combination thereof.3. The device of claim 1 , wherein said non linear material comprise a polymer embedded with quantum dots claim 1 , wherein said quantum dots is comprising InAs claim 1 , CdSe claim 1 , PbS claim 1 , PbSe claim 1 , CdTe claim 1 , Ge claim 1 , Si claim 1 , GaAs claim 1 , InGaAs or a combination thereof.4. The device of claim 1 , wherein said non linear material is further positioned within said slits of said grating.5. The device of claim 1 , wherein said dielectric layers are positioned on top of said grating and said grating is positioned on a substrate.6. The device of claim 5 , wherein said substrate comprises glass.7. The device of claim 1 , wherein said grating comprises an array of blocks separated by slits.8. The device of ...

Light Emitting, Photovoltaic Or Other Electronic Apparatus and System

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. 1. An apparatus , comprising:a base comprising a plurality of spaced-apart channels;a plurality of first conductors coupled to the base, each first conductor in a corresponding channel of the plurality of spaced-apart channels;a plurality of diodes coupled to the plurality of first conductors;a plurality of second conductors coupled to the plurality of diodes; anda plurality of substantially spherical lenses having at least a first index of refraction, the plurality of substantially spherical lenses suspended in a first polymer having at least a second, different index of refraction.2. The apparatus of claim 1 , wherein the plurality of diodes are substantially spherical claim 1 , substantially toroidal claim 1 , substantially cylindrical claim 1 , substantially faceted claim 1 , substantially rectangular claim 1 , substantially flat claim 1 , or substantially elliptical.3. The apparatus of claim 1 , wherein about fifteen percent to fifty-five percent of a surface of each ...

BACKSIDE IMAGE SENSOR PIXEL WITH SILICON MICROLENSES AND METAL REFLECTOR

A backside illumination (BSI) image sensor pixel that includes microlenses with elevated refractive indices is provided. The image sensor pixel may include a photodiode formed in a silicon substrate, a first microlens formed in a back surface of the substrate, a second microlens formed over a front surface of the substrate, a dielectric stack formed on the front surface of the substrate, and a reflective structure formed in the dielectric stack above the second microlens. The first microlens may be fabricated by forming shallow trench isolation structures in the back surface. The second microlens may be fabricated by depositing polysilicon on the front substrate of the substrate. The first microlens may serve to concentrate light towards the photodiode, whereas the second microlens may serve to collimate light that traverses through the substrate so that light exiting the second microlens will reflect off the reflective structure and back into the photodiode. 1. A backside illumination image sensor pixel , comprising:a substrate having a front surface and a back surface;a photosensitive element formed in the substrate, wherein the photosensitive element is configured to receive incoming light through the back surface; andshallow trench isolation structures formed in the back surface, wherein the shallow trench isolation structures surround a microlens configured to direct the incoming light towards the photosensitive element.2. The backside illumination image sensor pixel defined in claim further comprising:a passivation layer interposed between the microlens and the shallow trench isolation structures.3. The backside illumination image sensor pixel defined in claim further comprising:a color filter formed on the back surface, wherein the incoming light enters the back surface through the color filter, and wherein the color filter comprises a color filter selected from the group consisting of a green filter, a red filter, a blue filter, a yellow filter, a cyan ...

SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SOLID-STATE IMAGING DEVICE

A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged, the solid-state imaging device includes: a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels, wherein a protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters, the protrusion having a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion. 1. A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged , the solid-state imaging device comprising:a semiconductor substrate;a plurality of photoelectric conversion units formed in the semiconductor substrate to correspond to the pixels and configured to generate signal charges by performing photoelectric conversion on incident light; anda plurality of color filters formed above the semiconductor substrate to correspond to the plurality of the pixels,wherein a low-refractive index region is formed in a region on a side of the semiconductor substrate between adjacent ones of the color filters, the low-refractive index region having a refractive index lower than refractive indices of the adjacent ones of the color filters, andeach of the color filters is in contact with the adjacent ones of the color filters, above the low-refractive index region.2. The solid-state imaging device according to claim 1 ,wherein the low-refractive index region is a cavity or a region including a material which has a refractive index lower than the refractive indices of the adjacent ones of the color filters.3. The solid-state imaging device according to claim 2 ,wherein the low- ...

SOLID-STATE IMAGING DEVICE

According to an embodiment, an image sensor is provided for photoelectrically converting blue light, green light and red light for each pixel. A photoelectric conversion layer for red light is provided having a light absorption coefficient that is different than the light absorption coefficient of the photoelectric conversion layers for blue light and green light. 1. A solid-state imaging device , comprising:a wavelength separator that separates incident light into a first wavelength range, a second wavelength range, and a third wavelength range;a first image sensor comprising a first photoelectric conversion layer for converting the first wavelength range into an electrical signal;a second image sensor comprising a second photoelectric conversion layer for converting the second wavelength range into an electrical signal; anda third image sensor comprising a third photoelectric conversion layer for converting the third wavelength range into an electrical signal, wherein the first photoelectric conversion layer and the second photoelectric conversion layer consist essentially of silicon and the third photoelectric conversion layer comprises an embedded layer comprising an alloy of silicon and germanium.2. The imaging device of claim 1 , wherein the third photoelectric conversion layer consists essentially of silicon.3. The imaging device of claim 1 , wherein the embedded layer is formed at a shallower depth than the first claim 1 , the second claim 1 , and the third photoelectric conversion layers.4. The imaging device of claim 1 , wherein the embedded layer comprises a content of germanium that is greater than 0 percent to less than about 30 percent.5. The imaging device of claim 1 , further comprising:a pinning layer formed between the wavelength separator and the first, the second, and the third photoelectric conversion layers.6. The imaging device of claim 1 , further comprising:an insulating layer formed on a side of the first, the second, and the third ...

Photodiode Comprising Polarizer

A photodiode includes a photosensitive area and a polarizing grating located in front of the photosensitive area. The polarizing grating is formed by a plurality of galvanically conducting filaments. 1. A method of forming a light sensitive device , the method comprising:providing a photodiode having a photosensitive area; andforming a polarizing grating located in front of the photosensitive area, wherein the polarizing grating is formed from a plurality of galvanically conducting filaments.2. The method of claim 1 , wherein forming the polarizing grating comprises:forming a continuous layer of a galvanically conducting material; andpatterning the continuous layer to form the filaments.3. The method of claim 2 , wherein forming the continuous layer comprises depositing by electrochemical deposition.4. The method of claim 1 , wherein forming the polarizing grating comprises:forming a layer; andaltering material properties of the layer.5. The method of claim 4 , wherein altering material properties comprises implanting ions.6. A method of making a light sensitive device claim 4 , the method comprising:forming a photodiode by forming a second layer of a second conductivity type over a first layer of a first conductivity type, the first conductivity type being different than the second conductivity type; andforming a conductive polarization grating below a main surface of the second layer by implanting ions into the second layer.7. The method of claim 6 , wherein forming the conductive polarization grating comprises forming filaments and forming an interconnect connecting the filaments.8. The method of claim 7 , wherein the filaments comprise a translucent material.9. The method of claim 6 , further comprising connecting a voltage source to the conductive polarization grating.10. A photodiode comprising:a photosensitive area; anda polarizing grating located in front of the photosensitive area, wherein the polarizing grating is formed by a plurality of galvanically ...

SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate and a photoelectric conversion part formed in the semiconductor substrate In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon. 1. A solid-state imaging device comprising:a semiconductor substrate;a photoelectric conversion part formed in the semiconductor substrate;a laminate including an organic material layer and an inorganic material layer placed on the semiconductor substrate; andat least one stress relaxation layer interposed between the organic material layer and the inorganic material layer.2. The solid-state imaging device according to claim 1 , wherein the stress relaxation layer has a film stress that is different from and between a film stress of the organic material layer and a film stress of the inorganic material layer.3. The solid-state imaging device according to claim 2 , wherein the organic material layer is a planarizing layer claim 2 , and the inorganic material layer is a microlens layer.4. The solid-state imaging device according to claim 1 , wherein the stress relaxation layer comprises at least one material selected from SiO claim 1 , SiN claim 1 , and a silicon compound represented by the compositional formula SiON claim 1 , where 0 Подробнее

PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF

A In a photovoltaic device, a second electrode includes an aluminum-based electrode that is made of a material including aluminum and is electrically connected to an other surface side of a substrate by being embedded in at least openings on the other surface side of the substrate, and a silver-based electrode that is made of a material including silver, that is provided in a region between the openings on the other surface side of the substrate in a state where the silver-based electrode eats into a back surface insulating film such that the silver-based electrode is insulated from the other surface side of the substrate by the back surface insulating film, and that is electrically connected to the aluminum-based electrode via the back surface reflective film. 119-. (canceled)20. A photovoltaic device comprising:a first conductivity-type semiconductor substrate that includes an impurity diffusion layer in which a second conductivity-type impurity element is diffused on one surface side;an anti-reflective film formed on the impurity diffusion layer;a first electrode that penetrates the anti-reflective film and is electrically connected to the impurity diffusion layer;a back surface insulating film that includes a plurality of openings that reach an other surface side of the semiconductor substrate and is formed on the other surface side of the semiconductor substrate;a second electrode that is formed on the other surface side of the semiconductor substrate; anda back surface reflective film that is formed to cover at least the back surface insulating film and is made of metal, whereinthe second electrode includes an aluminum-based electrode that is made of a material including aluminum and is electrically connected to the other surface side of the semiconductor substrate by being embedded in at least the openings on the other surface side of the semiconductor substrate, and a silver-based electrode that is made of a material including silver, that is provided in a ...

Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip

A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer ( 2 ), arranging a p-conducting layer ( 4 ) on the n-conducting layer ( 2 ), arranging a metal layer sequence ( 5 ) on the p-conducting layer ( 4 ),arranging a mask ( 6 ) at that side of the metal layer sequence ( 5 ) which is remote from the p-conducting layer ( 4 ),in places removing the metal layer sequence ( 5 ) and uncovering the p-conducting layer ( 4 ) using the mask ( 6 ), and in places neutralizing or removing the uncovered regions ( 4 a ) of the p-conducting layer ( 4 ) as far as the n-conducting layer ( 2 ) using the mask ( 6 ), wherein the metal layer sequence ( 5 ) comprises at least one mirror layer ( 51 ) and a barrier layer ( 52 ), and the mirror layer ( 51 ) of the metal layer sequence ( 5 ) faces the p-conducting layer ( 4 ).

WAFER SCALE IMAGE SENSOR PACKAGE AND OPTICAL MECHANISM INCLUDING THE SAME

There is provided an optical mechanism including a substrate, an image sensor chip, a light source, a blocking member and a securing member. The image sensor chip is attached to the substrate and has an active area. The light source is attached to the substrate. The blocking member covers the image sensor chip and has an opening to expose at least the active area of the image sensor chip. The securing member fits on the blocking member to secure the blocking member to the substrate. 1. A wafer scale image sensor package , comprising:a die having an active area on a sensing surface thereof;an intermediate layer disposed on the sensing surface and surrounding the active area; anda transparent layer combined to the die through the intermediate layer, wherein a filter layer is formed on at least a partial surface of the transparent layer.2. The wafer scale image sensor package as claimed in claim 1 , wherein the transparent layer has an inner surface facing the die and an exterior surface opposite to the inner surface claim 1 , and the filter layer is formed on at least one of the inner surface and the exterior surface.3. The wafer scale image sensor package as claimed in claim 1 , wherein a filter layer is further formed on the active area of the die.4. The wafer scale image sensor package as claimed in claim 1 , wherein the filter layer is an IR pass filter or an infrared and blue filter.5. The wafer scale image sensor package as claimed in claim 1 , wherein a reflecting layer is formed on at least a partial surface of at least one of the transparent layer and the sensing surface of the die.6. The wafer scale image sensor package as claimed in claim 1 , wherein the transparent layer is a glass layer or an epoxy layer.7. The wafer scale image sensor package as claimed in claim 3 , wherein the filter layer is an IR pass filter or an infrared and blue filter.8. An optical mechanism claim 3 , comprising:a substrate having a front side;a wafer scale image sensor package ...

WAFER SCALE IMAGE SENSOR PACKAGE AND OPTICAL MECHANISM

There is provided an optical mechanism including a substrate, an image chip, a light source and a securing member. The image chip and the light source are attached to the substrate. The securing member is secured to the substrate and includes a first containing space for accommodating the light source, a second containing space for accommodating the image chip and a blocking region between the first containing space and the second containing space. 1. A wafer scale image sensor package , comprising:a die having an active area on a sensing surface thereof;an intermediate layer disposed on the sensing surface and surrounding the active area; anda transparent layer combined to the die through the intermediate layer, wherein a filter layer and a light blocking layer are formed on at least a partial surface of the transparent layer.2. The wafer scale image sensor package as claimed in claim 1 , wherein the transparent layer has an inner surface facing the die claim 1 , an exterior surface opposite to the inner surface and a lateral surface; the filter layer is formed on at least one of the inner surface and the exterior surface; and the light blocking layer is formed on at least one of the inner surface claim 1 , exterior surface and the lateral surface.3. The wafer scale image sensor package as claimed in claim 1 , wherein a filter layer and a light blocking layer are further formed on the active area of the die.4. The wafer scale image sensor package as claimed in claim 1 , wherein the filter layer is an IR pass filter or an infrared and blue filter.5. The wafer scale image sensor package as claimed in claim 1 , wherein the filter layer is opposite to the active area.6. The wafer scale image sensor package as claimed in claim 1 , wherein the transparent layer is a glass layer or an epoxy layer.7. An optical mechanism claim 1 , comprising:a substrate having a front side;a wafer scale image sensor package attached to the front side of the substrate and having an active ...

RECEIVER MODULE AND DEVICE

Provided is a receiver module, including: a semiconductor light receiving element including an electrode; and a sub-mount including: an electrical wiring joined to the electrode with solder; and a trap region arranged around a joining surface of the electrical wiring, the trap region retaining solder by solder wetting. 1. A receiver module , comprising:a semiconductor light receiving element comprising an electrode; and an electrical wiring joined to the electrode with solder; and', 'a trap region arranged around a joining surface of the electrical wiring, the trap region retaining solder by solder wetting., 'a sub-mount comprising2. The receiver module according to claim 1 ,wherein the sub-mount further comprises a barrier metal arranged between the joining surface and the trap region, andwherein the joining surface of the electrical wiring is surrounded by the barrier metal.3. The receiver module according to claim 1 , wherein the trap region contains a metal to be reacted with solder to be alloyed.4. The receiver module according to claim 3 ,wherein the electrode has a surface containing Au as a main component,wherein solder comprises AuSn-based solder, andwherein the trap region has a surface containing Au.5. The receiver module according to claim 2 , wherein the barrier metal has a surface containing one of Pt and Pd.6. The receiver module according to claim 1 ,wherein the semiconductor light receiving element comprises a plurality of electrodes,wherein the sub-mount comprises a plurality of electrical wirings,wherein each of the plurality of electrodes is joined to corresponding one of the plurality of electrical wirings with solder, andwherein the trap region is arranged around each of the plurality of electrical wirings to retain melted solder when the plurality of electrodes and the plurality of electrical wirings are joined to each other, thereby preventing joining between the plurality of electrodes and joining between the plurality of electrical wirings ...

COLOR CONVERSION FILTER

A color conversion filter contains at least one kind of squarylium dye that radiates fluorescence light, has a wavelength conversion capability, absorbs light in an unneeded wavelength region, radiates fluorescence light in a preferable wavelength region, and does not allow decrease in brightness, and thus is preferable for color conversion light-emitting devices, photoelectric conversion devices and the like. Specifically, the color conversion filter has an absorption having a high intensity in the range of 570 to 600 nm, and thus is preferable for use in a color conversion filter that radiates fluorescence light having a high intensity in the range of 600 to 780 nm. 15-. (canceled)7. A color conversion light-emitting device comprising a luminescent part and the color conversion filter according to .8. The color conversion light-emitting device according to claim 7 , wherein the luminescent part is an LED element.9. A photoelectric conversion device comprising a photoelectric conversion element and the color conversion filter according to . The present invention relates to a color conversion filter that contains a squarylium dye that radiates fluorescence light, and has a wavelength conversion capability. The color conversion filter is a color conversion filter that enables multicolor display with high definition, high brightness and high efficiency, and is also excellent in producibility. The color conversion filter of the present invention is useful for displaying displays such as liquid crystals, PDPs and organic ELs, image sensors, personal computers, word processors, audios, videos, car navigations, telephone sets, mobile terminals and industrial measurement devices and the like, for photoelectric conversion elements such as solar batteries, for illuminations such as fluorescent lamps, LEDs and EL illuminations, for dye lasers, for copy protection, and the like.Compounds having an absorption in the visible light region are used as optical elements in optical ...

METHOD OF FABRICATING A SOLAR CELL

A solar cell and a fabricating method thereof are provided. In the method of fabricating the solar cell, a p-type semiconductor substrate on whose light-receiving surface an anti-reflection coating is formed is loaded into a processing chamber. In this case, the p-type semiconductor substrate may be loaded on a substrate support of an apparatus of processing a plurality of substrates along the circumference of the substrate support, in the state where the back surface of the p-type semiconductor substrate faces upward. Then, a back surface field (BSF) layer having the characteristic of Negative Fixed Charge (NFC) is formed with AlO, AN or ALON on the back surface of the p-type semiconductor substrate. At this time, the BSF layer may be formed by simultaneously injecting an Al source gas, a first purge gas, an oxidizing agent gas and/or a ntiriding agent gas, and a second purge gas through injection holes of individual gas injection units while relatively rotating the substrate support with respect to the shower head. Thereafter, a back surface electrode is formed on the BSF layer such that the back surface electrode is electrically connected to the BSF layer. 1. A method of fabricating a solar cell comprising:preparing a p-type semiconductor substrate;forming a back surface field (BSF) layer with Al compound on an opposite surface of a light-receiving surface of the p-type semiconductor substrate;forming a capping layer on the BSF layer; andforming a back surface electrode on the capping layer to electrically connect to the BSF layer.2. The method of claim 1 , wherein:the BSF layer comprises at least one film among an AlO film, an AlN film and an AlON film, andthe AlO film, the AlN film and the AlON film are formed by performing deposition is within a temperature range of 150-400° C. using an Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) process.3. The method of claim 2 , wherein the forming of the BSF layer comprises:loading at least one ...

FORMING GRADED INDEX LENS IN AN ALL ATMOSPHERIC PRESSURE PRINTING PROCESS TO FORM PHOTOVOLTAIC PANELS

A PV panel uses an array of small silicon sphere diodes (10-300 microns in diameter) connected in parallel. The spheres are embedded in an uncured aluminum-containing layer, and the aluminum-containing layer is heated to anneal the aluminum-containing layer as well as p-dope the bottom surface of the spheres. A phosphorus-containing layer is deposited over the spheres to dope the top surface n-type, forming a pn junction. The phosphorus layer is then removed. A conductor is deposited to contact the top surface. Alternatively, the spheres are deposited with a p-type core and an n-type outer shell. After deposition, the top surface is etched to expose the core. A first conductor layer contacts the bottom surface, and a second conductor layer contacts the exposed core. A liquid lens material is deposited over the rounded top surface of the spheres and cured to provide conformal lenses designed to increase the PV panel efficiency. 1. A solar cell structure comprising:one or more diodes on a substrate adapted to convert sunlight to electricity, the diodes having a first surface portion for being exposed to the sun, the diodes having an outer surface being formed of a first material having a first index of refraction;a first lens layer overlying the first surface portion, the first lens layer comprising transparent first particles having an average first diameter less than 300 nm, the first particles having a second index of refraction less than the first index of refraction; anda second lens layer overlying the first lens layer, the second lens layer comprising transparent second particles having an average second diameter larger than the first diameter, the second particles having a third index of refraction less than the second index of refraction.2. The structure of wherein the first particles have an average diameter between 50-300 nm.3. The structure of wherein the first particles have an index of refraction greater than or equal to 1.7.4. The structure of wherein ...

PHOTOVOLTAIC DEVICES WITH OFF-AXIS IMAGE DISPLAY

A concentrated photovoltaic and display apparatus includes a backplane substrate, a plurality of photovoltaic elements distributed over the backplane substrate, a plurality of display elements distributed over the backplane substrate between the photovoltaic elements, and an optical element positioned over the backplane substrate, the photovoltaic elements, and the display elements. The optical element is configured to concentrate incident light propagating in a direction substantially parallel to an optical axis thereof onto the photovoltaic elements. The optical element is further configured to direct light reflected or emitted from the display elements in a direction that is not substantially parallel to the optical axis of the optical element. Related fabrication methods and arrays including the apparatus are also discussed. 1. A concentrated photovoltaic and display apparatus , comprising:a backplane substrate;a plurality of photovoltaic elements distributed over the backplane substrate;a plurality of display elements distributed over the backplane substrate between the photovoltaic elements; and the optical element is configured to concentrate incident light propagating in a direction substantially parallel to an optical axis thereof away from the display elements and onto the photovoltaic elements; and', 'the optical element is configured to direct light reflected or emitted from the display elements in one or more directions that are not substantially parallel to the optical axis thereof such that the photovoltaic elements are not substantially visible when viewed at angles of about 2 degrees and more with respect to the optical axis., 'a concentrating optical element positioned over the backplane substrate, the photovoltaic elements, and the display elements, wherein2. The apparatus of claim 1 , wherein the optical element includes a Fresnel lens claim 1 , an array of Fresnel lenses claim 1 , a lens claim 1 , an array of lenslets claim 1 , a plano-convex ...

Photonic Systems and Methods of Forming Photonic Systems

Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems. 126-. (canceled)27. A photonic system , comprising:a silicon-containing waveguide over a base;an opening extending into the base;a liner narrowing the opening;germanium-containing detector material over the base and extending into the narrowed opening; the detector material being part of a detector configured to detect light within the waveguide; a lower region of the germanium-containing detector material within the narrowed opening having a higher concentration of defects than an upper region of the germanium-containing detector material above the narrowed opening; andwherein the upper region extends laterally outwardly beyond the liner so that some of the upper region is directly over the liner.28. The photonic system of wherein the liner comprises electrically insulative material.29. The photonic system of wherein the liner comprises electrically conductive material.30. A photonic system claim 27 , comprising:a silicon-containing waveguide over a monocrystalline silicon base;an opening extending into the base;a liner narrowing the opening;a germanium-containing detector material over the base and extending into the narrowed opening; the detector material being part of a detector configured to detect light within the waveguide; a region of the germanium-containing detector material within the narrowed opening having a higher concentration of defects than a region of the germanium-containing detector material outside of the narrowed opening;wherein the silicon- ...

FILM-FORMING COMPOSITION

A film-forming composition including a triazine ring-containing hyperbranched polymer with a repeating unit structure indicated by formula (1), and inorganic micro particles is provided. This enables the provision of a film-forming composition capable of hybridizing without reducing dispersion of the inorganic micro particles in a dispersion fluid, capable of depositing a coating film with a high refractive index, and suitable for electronic device film formation. 3. The film-forming composition according to claim 2 , wherein Ar is at least one moiety selected from the group consisting of moieties of formulas (5) to (12) and moieties of formulas (14) to (18).8. The film-forming composition according to claim 1 , wherein the hyperbranched polymer is capped on at least one end by an alkyl claim 1 , aralkyl claim 1 , aryl claim 1 , alkylamino claim 1 , alkoxysilyl-containing alkylamino claim 1 , aralkylamino claim 1 , arylamino claim 1 , alkoxy claim 1 , aralkyloxy claim 1 , aryloxy or ester group.9. The film-forming composition according to claim 8 , wherein the hyperbranched polymer has at least one terminal triazine ring which is capped by an alkyl claim 8 , aralkyl claim 8 , aryl claim 8 , alkylamino claim 8 , alkoxysilyl-containing alkylamino claim 8 , aralkylamino claim 8 , arylamino claim 8 , alkoxy claim 8 , aralkyloxy claim 8 , aryloxy or ester group.10. The film-forming composition according to claim 1 , wherein the inorganic fine particles are an oxide claim 1 , sulfide or nitride of one or more metal selected from the group consisting of Be claim 1 , Al claim 1 , Si claim 1 , Ti claim 1 , V claim 1 , Fe claim 1 , Cu claim 1 , Zn claim 1 , Y claim 1 , Zr claim 1 , Nb claim 1 , Mo claim 1 , In claim 1 , Sn claim 1 , Sb claim 1 , Ta claim 1 , W claim 1 , Pb claim 1 , Bi and Ce.11. The film-forming composition according to claim 10 , wherein the inorganic fine particles have a primary particle size of 2 to 50 nm and are colloidal particles of an oxide of one or ...

GLASS SUBSTRATE FOR CU-IN-GA-SE SOLAR CELL AND SOLAR CELL USING SAME

A glass substrate for a CIGS solar cell, having high cell efficiency and high glass transition temperature is provided. The glass substrate for a vapor-deposited CIGS film solar cell has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10to 100×10/° C., wherein the ratio of the average total amount of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35, and the ratio of the average Na amount within from 10 to 40 nm in depth from the surface of the glass substrate after heat treatment to such average Na amount before the heat treatment is at least 1.5. 1. A glass substrate for a vapor-deposited Cu—In—Ga—Se film solar cell , which has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10to 100×10/° C. , whereinthe ratio of the average total amount (atom %) of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount (atom %) of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35,{'sub': '2', 'the ratio of the average Na amount (atom %) within from 10 to 40 nm in depth from the surface of the glass substrate after a heat treatment at 600° C. under a Natmosphere for 1 hour to such average Na amount before the heat treatment is at least 1.5, and'}{'sub': 2', '2', '3', '2', '2', '2', '2', '2', '2, 'the glass substrate comprises, at 5,000 nm or more in depth from the surface of the glass substrate, as represented by mass % based on the following oxides, from 53 to 72% of SiO, from 1 to 15% of AlO, from 0.5 to 9% of MgO, from 0.1 to 11% of CaO, from 0 to 11% or SrO, from 0 to 11% or BaO, from 2 to 11% of NaO, from 2 to 21% of KO and from 0 to 10.5% of ZrO, provided that MgO+CaO+SrO+BaO is from 4 to 25%, CaO+SrO+BaO is from 2 to ...

Blazed grating for solar energy concentration

A solar concentrator having a photovoltaic cell in optical contact with a cover. A blazed grating is provided adjacent to and co-planar with the photovoltaic cell for preferentially diffracting light that does not directly intercept the photovoltaic cell toward the photovoltaic cell via total internal reflection in the cover.

SOLAR CONCENTRATOR AND PRODUCTION METHOD

The invention relates to a solar concentrator, comprising a solid body made of a transparent material, which has a light coupling surface and a convex light decoupling surface, wherein the solid body has a light guide part between the light coupling surface and the convex light decoupling surface, wherein said light guide part is tapered in the direction of the convex light decoupling surface. The invention further relates to a production method, wherein the material is precision-molded between two molds. 136.-. (canceled)37. A solar concentrator having a solid body of transparent material , which solid body comprising:a light entry face;{'b': '30', 'a convex light exit face curved with a radius of curvature of more than mm; and'}a light guide portion between the light entry face and the convex light exit face tapering in the direction of the convex light exit face, which light guide portion is restricted by a light guide portion surface between the light entry face and the convex light exit face.38. The solar concentrator as claimed in claim 37 , wherein the light guide portion surface merges into the light exit face with a continuous first derivative.39. The solar concentrator as claimed in claim 37 , wherein the light guide portion surface merges into the light exit face with a curvature whose radius is no more than 0.25 mm40. The solar concentrator as claimed in claim 37 , wherein the convex light exit face is curved such that the maximum of its deviation of contour from a light exit plane is more than 1 μm.41. The solar concentrator as claimed in claim 37 , wherein the transition from the light guide portion surface to the light exit face is blank molded.42. The solar concentrator as claimed in claim 37 , wherein the convex light exit face is blank molded.43. A solar concentrator made from transparent material claim 37 , which solar concentrator comprising:a light entry face;a convex light exit face curved such that the maximum of its deviation of contour from ...

OPTICAL MODULE

An optical module includes a light-receiving element configured to convert an incident optical signal to an electric signal. The light-receiving element includes a mesa part configured to laminate at least a first semiconductor layer, a light absorption semiconductor layer that absorbs an optical signal entering from a light reception surface, and a second semiconductor layer. The light-receiving element also includes an electrode part disposed on a top of the mesa part and a wiring part that covers a part of a side surface of the mesa part. The optical module includes a lens configured to condense an optical signal from an optical fiber onto the light reception surface. The wiring part is disposed at a position based on an intensity distribution of the optical signal on the light reception surface. 1. An optical module , comprising:at least one light-receiving element configured to convert an incident optical signal to an electric signal, the at least one light-receiving element including;a mesa part configured to laminate at least a first semiconductor layer, a light absorption semiconductor layer that absorbs an optical signal entering from a light reception surface, and a second semiconductor layer,an electrode part disposed on a top of the mesa part, anda wiring part that covers a part of a side surface of the mesa part and that is disposed so as to extend from a part of an outer periphery of the electrode part toward an outside of the mesa part; anda lens configured to condense an optical signal from an optical fiber onto the light reception surface of the at least one light-receiving element,wherein the wiring part is disposed at a position based on an intensity distribution of the optical signal on the light reception surface.2. The optical module according to claim 1 , wherein the wiring part is disposed along a longitudinal direction of the intensity distribution.3. The optical module according to claim 2 , wherein the intensity distribution has an ...

PHOTODETECTOR AND CORRESPONDING DETECTION MATRIX

The invention relates to a photodetector intended for the detection of incident light radiation in the visible and close infrared region, said photodetector comprising: a light-radiation-absorption structure () comprising a semiconductor material of index n and including a surface () exposed to the incident light radiation, and electrical connection means in contact with the aforementioned structure in order to convey a detection signal produced by the structure in response to the light radiation. The invention is characterised in that light-radiation-focusing means () are provided on the exposed surface (), said means being formed by a single nanostructure having dimensions smaller than the wavelength of the light radiation in all directions of space. 1. A photodetector comprising:{'sub': '1', 'a light radiation absorption structure comprising a semiconductor material, having an index, n, and a surface for exposure to incident light radiation, and'}an electrical connection means in contact with the structure, which conveys a detection signal produced by the structure, in response to the light radiation,whereina focusing means is on the surface,the focusing means comprises a single nanostructure having a dimension less than a wavelength of the light radiation in all directions in space, andthe incident light radiation is in a visible range, a near-infrared range, or both.2. The photodetector of claim 1 , wherein the nanostructure comprises a non-absorbent material.3. The photodetector of claim 1 , wherein the nanostructure comprises a material having an index claim 1 , n claim 1 ,{'sub': 2', '1, 'wherein nis less than or equal to the index nand greater than an index of a surrounding medium.'}4. The photodetector of claim 1 , further comprising a lens arranged on a path of the incident light radiation claim 1 , upstream of the focusing means.5. The photodetector of claim 1 , further comprising a filter arranged on a path of the incident light radiation claim 1 , ...

Anti-reflection structures for cmos image sensors

Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.

Method of Manufacturing Plurality of Optical Devices

In accordance with an aspect of the invention, a method of manufacturing, on a waver scale, a plurality of optical devices comprises the steps of providing a wafer scale spacer with a plurality of holes arranged in a hole pattern at the positions of camera modules, providing a wafer scale substrate with an infrared (IR) filter that is patterned to comprise a plurality of IR filter sections, the IR filter sections being arranged in an IR filter pattern that is such that radiation paths through the substrate and onto the camera modules go through the IR filter sections, and stacking the substrate and the spacer on each other with the holes and the filter sections being aligned. 1. A method of manufacturing , on a wafer scale , a plurality of optical devices being camera modules with a sensor module or being optical modules for camera modules with a sensor module , the optical devices each defining an optical path , the method comprising the steps of:providing a first wafer scale substrate comprising a pattern of lenses and comprising a wavelength selective filter that is patterned to comprise a plurality of filter sections,providing a wafer scale spacer with a plurality of holes arranged in a hole pattern that corresponds to the pattern of lenses;stacking the first substrate and the spacer on each other with the holes and the lenses being aligned, and with the filter sections being arranged and dimensioned so that the respective optical path traverses the respective filter section, the step of stacking yielding a wafer scale stack, andseparating the wafer scale stack into the optical devices.2. The method according to claim 1 , comprising claim 1 , prior to the step of separating the wafer scale stack claim 1 , the further step of providing a second wafer scale substrate and stacking the second wafer scale substrate and the spacer on each other.3. The method according to claim 2 , wherein the second wafer scale substrate is a transparent optical substrate with an ...

APPARATUS FOR WAVELENGTH-DIVISION MULTIPLEXING AND DEMULTIPLEXING

The present invention relates to an apparatus for wavelength-division multiplexing and demultiplexing, to an optical communication module, and to an optical device. The apparatus for wavelength-division multiplexing and demultiplexing comprises: a first lens block having a lens array at one side thereof; a second lens block having a lens surface corresponding to the lens array and combined with the other side of the first lens block; a receptacle having an optical fiber ferrule fixed at the center thereof and stacked on the second lens block; and a base combined with one side of the first lens block, wherein the first block is stacked on the base. 1. An apparatus for wavelength division multiplexing and demultiplexing , the apparatus comprising:a first lens block including a lens array at one side of the first lens block;a second lens block including a lens surface corresponding to the lens array and combined with another side of the first lens block;a receptacle having an optical fiber ferrule fixed at a center thereof and stacked on the second lens block; anda base combined with the one side of the first lens block,wherein the first lens block is stacked on the base.2. The apparatus of claim 1 , further comprising a plurality of thin film is filters arranged at the another side of the first lens block corresponding to the lens array and having different wavelength ranges.3. The apparatus of claim 2 , wherein the optical fiber ferrule is aligned to a focal length of the second lens block claim 2 , a light ray emitted from the optical fiber ferrule is converted to a parallel light by the second lens block claim 2 , the parallel light is converted to light rays having predetermined wavelength ranges by the thin film filters claim 2 , and the light rays having predetermined wavelength ranges are concentrated on focuses by the lens array.4. The apparatus of claim 1 , wherein the first lens block and the second lens block are insertion combined with each other claim 1 , ...

Directive Optical Device Having a Partially Reflective Grating

A directive optical device includes an optically active material which may be a light emitting material or a light collecting material. A partially reflective grating is disposed proximate to the optically active material. 1. A directive optical device , comprising:an optically active material having a first side and a second side and being capable of converting between an electrical voltage and light at a wavelength;a first electrical contact in electrical communication with the optically active material proximate to the first side, the first electrical contact being reflective at the wavelength; a second electrical contact in electrical communication with the optically active material proximate to the second side, wherein the second electrical contact is transparent at the wavelength; anda partially reflective grating disposed proximate to the second electrical contact, wherein the partially reflective grating comprises a periodic array of alternating optically reflective and non-reflective regions.2. The device as in claim 1 , wherein the optically reflective regions are spaced from each other by an optical distance of substantially one half of the wavelength.3. The device as in claim 1 , wherein the optically reflective regions each have a width of substantially one third of the wavelength.4. The device as in claim 1 , wherein the optically non-reflective regions are spaced from each other by an optical distance of substantially one half of the wavelength.5. The device as in of claim 1 , wherein the optically non-reflective regions each have a width of substantially one third of the wavelength.6. The device as in of claim 1 , wherein the partially reflective grating is spaced away from the first electrical contact by an optical distance of substantially one half of the wavelength.7. The device as in of claim 1 , wherein the partially reflective grating is spaced away from the optically active material by an optical distance of substantially one quarter of the ...

SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed. 1. A method of making solid state image pickup device , the method comprising:forming a peripheral circuit region and a pixel region in a semiconductor substrate, the pixel region including a photo-electric conversion device and a pixel;forming a wiring layer over a first surface side of the semiconductor substrate, the first surface being opposite to a light receiving surface of the semiconductor substrate;forming a light-shielding film over the light receiving surface, the light-shielding film covering the peripheral circuit region and the pixel;forming an opening through the light-shielding film, the opening being formed over the photo-electric conversion device,wherein the pixel is configured to detect black level in the pixel region, the opening is not being formed over the pixel.2. The method of claim 1 , wherein the photo-electric conversion device is a photodiode including a back-side layer of a first conductivity type in the light receiving surface claim 1 , a photo-electric conversion region of a second conductivity type claim 1 , and a first region of the first conductivity type in the first surface.3. The method of claim 2 , wherein a charge accumulation region is between said photo-electric conversion region and said first surface side.4. The method of claim 1 , further ...

DAMASCENE METAL GATE AND SHIELD STRUCTURE, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Semiconductor structures with damascene metal gates and pixel sensor cell shields, methods of manufacture and design structures are provided. The method includes forming a dielectric layer over a dummy gate structure. The method further includes forming one or more recesses in the dielectric layer. The method further includes removing the dummy gate structure in the dielectric layer to form a trench. The method further includes forming metal in the trench and the one more recesses in the dielectric layer to form a damascene metal gate structure in the trench and one or more metal components in the one or more recesses. 1. A structure comprising a damascene metal gate and metal shield for pixel sensor cells in a same dielectric layer , above a sensitive component of a pixel sensor cell , wherein the metal shield for pixel sensor cells are formed in shallow recesses in the dielectric layer and the damascene metal gate is formed in a trench extending to an underlying substrate formed under the dielectric layer.2. The structure of claim 1 , wherein the dielectric layer is in direct contact with the substrate.3. The structure of claim 1 , wherein the pixel sensor cell and the metal shield are formed at a same level.4. The structure of claim 1 , wherein metal shield is structured and positioned to reduce noise in the pixel sensor cell.5. The structure of claim 1 , wherein metal shield is structured and positioned to block light from striking the sensitive component of the pixel sensor cell.6. The structure of claim 5 , wherein the sensitive component includes floating diffusions.7. The structure of claim 1 , wherein the metal shield is placed in a lower level of a stack.8. The structure of claim 1 , wherein the substrate comprises silicon on insulator (SOI) technology.9. The structure of claim 1 , wherein the recesses are about 25% to 75% of a height of the trench.10. The structure of claim 1 , wherein the metal shield comprises a same metal as the metal gate.11. The ...

OPTICAL ELEMENT MODULE AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing an optical element module in which an optical element and a semiconductor circuit element are mounted on one surface of a silicon substrate, a mirror surface inclined at approximately 45 degrees is formed on the other surface, and an optical fiber facing the mirror surface is disposed in a V groove formed along the other surface, the method of manufacturing includes the steps of forming the mirror surface and V-shaped side surfaces of the V groove simultaneously by first crystal anisotropic etching on the other surface, and forming an attaching surface substantially perpendicular to the one surface and the other surface, which is formed at an end side of the V groove, and for attaching an end of the optical fiber, by second crystal anisotropic etching in a crystal plane orientation different from that of the first crystal anisotropic etching. 1. A method of manufacturing an optical element module in which an optical element and a semiconductor circuit element are mounted on one surface of a front surface and a rear surface of a silicon substrate , a mirror surface inclined at approximately 45 degrees to the one surface and the other surface is formed on the other surface , and an optical fiber facing the mirror surface is disposed in a V groove formed along the other surface , the method of manufacturing the optical element module comprising the steps of:forming the mirror surface and V-shaped side surfaces of the V groove simultaneously by first crystal anisotropic etching on the other surface; andforming an attaching surface substantially perpendicular to the one surface and the other surface, which is formed at an end side of the V groove, and for attaching an end of the optical fiber, by second crystal anisotropic etching in a crystal plane orientation different from that of the first crystal anisotropic etching.2. The method of manufacturing the optical element module according to claim 1 , further comprising a step of forming a ...

PROFILING SOLID STATE SAMPLES

Methods may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs. 1. A method for profiling a solid state lens structure , the method comprising:exposing a gas and/or the solid state lens structure to an energy beam such that a first region of the solid state lens structure is removed and a second region of the solid state lens structure is coated concurrently with the first region being removed;constructing a profile of the solid state lens structure at a selected location; andcompiling a plurality of profiles of the solid state lens structure, each profile from one of a plurality of selected locations.2. The method of wherein exposing the gas and/or the solid state lens structure to the energy beam includes at least partially dissociating the gas.3. The method of wherein the energy beam is an electron beam.4. The method of wherein the energy beam is configured to dissociate the gas into a plurality of species.5. The method of and further comprising choosing the gas such that a reactive species of the gas is configured to selectively etch the first region of the solid state lens structure.6. The method of wherein choosing the gas comprises choosing a gas such that the reactive species does not etch the second region of the solid state lens structure.7. The method of wherein the second region is coated with a carbon containing coating.8. The method of wherein the second region includes halogen such that a ratio of halogen to carbon is in a range of 1:1 to ...

Solid-state imaging device

According to one embodiment, an image sensor, which is a solid imaging device, includes a photoelectric conversion element array, a condensing optical element array, filter and reflector units, and a reflective unit. The reflective unit further reflects a light reflected by the filter and reflector units. The condensing optical element is arranged so that it contains a first photoelectric conversion element and a portion of a second or a third photoelectric conversion element, which are adjacent to the first photoelectric conversion element. The arrangement of the photoelectric conversion elements may comprise a cell. The reflective unit includes at least a first reflective surface and a second reflective surface. The first reflective surface is opposite to the filter and reflector units. The second reflective surface surrounds the filter and reflector units and the first reflective surface for each cell.

Semiconductor Component and Method for Producing a Semiconductor Component

A semiconductor component includes at least one optoelectronic semiconductor chip and a connecting carrier having a connecting surface on which the semiconductor chip is disposed. A reflective coating and a limiting structure are formed on the connecting carrier. The limiting structure at least partially encloses the semiconductor chip in the lateral direction, and the reflective coating at least partially extends in the lateral direction between a side surface of the semiconductor chip and the limiting structure. 115-. (canceled)16. A semiconductor component comprising:an optoelectronic semiconductor chip;a connection carrier having a connection area, the semiconductor chip being arranged on the connection area of the connection carrier;a reflector layer disposed on the connection carrier; anda delimiting structure disposed on the connection carrier and extending around the semiconductor chip in a lateral direction at least in regions, wherein the reflector layer runs in a lateral direction at least in regions between a side face of the semiconductor chip and the delimiting structure.17. The semiconductor component according to claim 16 , wherein the reflector layer directly adjoins the semiconductor chip at least in regions.18. The semiconductor component according to claim 16 , wherein the reflector layer comprises an electrically insulating material.19. The semiconductor component according to claim 16 , wherein the reflector layer is arranged completely within the delimiting structure in a plan view of the semiconductor component.20. The semiconductor component according to claim 16 , wherein the semiconductor chip projects beyond the delimiting structure in a vertical direction.21. The semiconductor component according to claim 16 , wherein the connection area is formed by a connection area layer and wherein the delimiting structure is formed by a partial region of the connection area layer that is spaced apart from the connection area.22. The semiconductor ...

IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM

An image pickup apparatus includes photoelectric conversion units each including a first semiconductor region of a first conductivity type and a semiconductor region of a second conductivity type disposed in contact with the first semiconductor region, a potential barrier formed between photoelectric conversion units, and a contact plug disposed in an image sensing area. The number of contact plugs is smaller than the number of photoelectric conversion units. The photoelectric conversion units include first and second photoelectric conversion units and are arranged such that at least two first photoelectric conversion units are adjacent in a first direction. The potential barrier includes a first part formed between the two first photoelectric conversion units disposed adjacently and a second part formed between first and second photoelectric conversion units adjacent to each other. The contact plug is located closer to the first part than to the second part. 1. An image pickup apparatus comprising:a plurality of photoelectric conversion units each including a first-conductivity-type first semiconductor region configured to accumulate a signal charge and a second-conductivity-type semiconductor region disposed in contact with the first semiconductor region;a potential barrier formed between photoelectric conversion units included in the plurality of photoelectric conversion units; anda contact plug disposed in an image sensing area, the plurality of photoelectric conversion units being disposed in the image sensing area, and configured to supply a voltage to the second-conductivity-type semiconductor region, whereina number of contact plugs is smaller than a number of photoelectric conversion units included in the plurality of photoelectric conversion units,the plurality of photoelectric conversion units include a plurality of first photoelectric conversion units configured to receive light having a wavelength in a first wavelength range and a plurality of second ...

IMAGE SENSOR UNIT, IMAGE READING APPARATUS, IMAGE FORMING APPARATUS, AND MANUFACTURING METHOD

An image sensor unit includes: sensor substrates on which a plurality of sensor chips are mounted; rod-lens arrays that focus light from an original on the sensor substrates; and a frame body that houses the plurality of sensor substrates and the plurality of rod-lens arrays. The frame body is divided into a first frame and a second frame. A side surface of the rod-lens array in a sub-scan direction is fixed only by the first frame, and the plurality of rod-lens arrays are arranged in the main-scan direction. 1. An image sensor unit comprising:sensor substrates on which a plurality of photoelectric conversion elements are mounted;rod-lens arrays that focus light from an object to be read on the sensor substrates; anda frame body that houses the plurality of sensor substrates and the plurality of rod-lens arrays, whereinthe frame body is divided into a first frame and a second frame,a side surface of the rod-lens array in a sub-scan direction is fixed only by the first frame, and the plurality of rod-lens arrays are arranged in the main-scan direction.2. The image sensor unit according to claim 1 , whereinwhen the first frame and the second frame are coupled,a gap is formed between the rod-lens arrays and the second frame throughout the main-scan direction.3. The image sensor unit according to claim 1 , whereinone end of the sensor substrate in the sub-scan direction is fixed only by the first frame.4. The image sensor unit according to claim 3 , whereinwhen the first frame and the second frame are coupled,a gap is formed between the sensor substrates and the second frame throughout the main-scan direction.5. The image sensor unit according to claim 1 , whereinthe first frame and the second frame are coupled by a side plate member which blocks an opening that opens in the main-scan direction.6. The image sensor unit according to claim 5 , whereinthe first frame and the second frame are coupled by a transparent member which blocks an opening that opens in a direction ...

MOLD HAVING FINE UNEVEN STRUCTURE IN SURFACE, METHOD OF MANUFACTURING ARTICLE HAVING FINE UNEVEN STRUCTURE IN SURFACE, USE OF ARTICLE, LAMINATED BODY EXPRESSING IRIS COLOR, AND SURFACE-EMITTING BODY

A mold having an uneven structure is provided, wherein surface roughness Ra of the uneven structure, a maximum value Ra′(max) and a minimum value Ra′(min) of line roughness Ra′ satisfy the following Expression (1). 1. A mold having an uneven structure , {'br': None, 'i': Ra', 'Ra', 'Ra≦, '0.13≦(′(max)−′(min))/0.82\u2003\u2003(1).'}, 'wherein surface roughness Ra of the uneven structure, a maximum value Ra′(max) and a minimum value Ra′(min) of line roughness Ra′ satisfy the following Expression (1)2. The mold according to claim 1 ,wherein in the mold having the uneven structure, aluminum or an alloy thereof is deposited on a surface of an undercoat layer that is formed on a surface of a base material and is formed from a hardened material of the following composition I or II for forming an undercoat layer:composition I for forming an undercoat layer comprising,45 to 95% by mass of urethane(meth)acrylate (1A),1 to 50% by mass of a compound (1B) having a radically polymerizable double bond (provided that, the urethane(meth)acrylate (1A) is excluded), and0.1 to 15% by mass of a photopolymerization initiator (1C), andcomposition II for forming an undercoat layer comprising,25 to 90% by mass of urethane(meth)acrylate (2A),1 to 50% by mass of a compound (2B) having a radically polymerizable double bond (provided that, the urethane(meth)acrylate (2A) is excluded),0.1 to 15% by mass of a photopolymerization initiator (2C), and1 to 60% by mass of fine particles (2D).3. A light extraction substrate having an uneven structure for a surface-emitting body claim 1 , {'br': None, 'i': Ra', 'Ra', 'Ra≦, '0.13≦(′(max)−′(min))/0.82\u2003\u2003(1)'}, 'wherein surface roughness Ra of the uneven structure and a maximum value Ra′(max) and a minimum value Ra′(min) of line roughness Ra′ satisfy the following Expression (1)4. The light extraction substrate for a surface-emitting body according to claim 3 ,wherein the extraction substrate for a surface-emitting body includes a transparent base ...