A PHOTOVOLTAIC ELEMENT WITH AN INCLUDED RESONATOR

Technical Field

The invention relates to a photovoltaic element of the resonator, which is characterized in that the conversion of light energy to electric energy with high efficiency of the associated, the element includes is located between the two electrodes of the semiconductor structure.

Background Art

In the current photovoltaic power generation, more than 50 years of conversion solar electromagnetic radiation (in the 100 nm to 10000 nm wavelength within a range of wide band electromagnetic radiation) is generally the principle of the application. Solar battery comprising two metal electrodes located between two of the semiconductor layer (wherein the silicon is a commonly used material). One of these layers (N-type material) includes a plurality of electronic with negative charge, and another layer (P-type material) display the easy accepting electronic may define the "hole" a large amount of the gap. The electromagnetic wave conversion for low frequency electromagnetic wave or DC component of the apparatus is referred to as the transducer/converter (transvertors/converters). For this purpose, only on the basis of the experimental result of electromagnetic wave conversion effect, with different concepts and framework types of semiconductor structure is applied. So far the design of the antenna, the detector or the structure has not been tuned into resonance; the application of the processing of the semiconductor structure is confronted with the considerable static electromagnetic wave difficulties.

Similar solutions of the antenna and the principle of the forward electromagnetic wave is converted into another type of electromagnetic radiation (that is, with different stabilities of static electromagnetic wave or electromagnetic wave) and its subsequent processing. Certain relates to irradiation of the electromagnetic wave and its reflection and broad-spectrum of the solar radiation the problem of characteristics. In general, the past several decades, construction can be maintained in the design of broad-spectrum in the characteristic of the antenna is not easy.

Content of the invention

The invention aims to propose a is disposed on a semiconductor structure with a resonator of the model structure of the photovoltaic element. Based on the adopted structure technology, the component of the electric field and the magnetic field and produce high value component, in order to make these component is based on the typical semiconductor of the known technology is of use and can be processed.

The above-mentioned defects by the elimination of photovoltaic element of the resonator, the resonator comprising a semiconductor structure, characterized in that the semiconductor structure is composed of no electromagnetic damping of regional and electromagnetic damping region is formed, wherein the no electromagnetic damping of a plane area of the incident plane, the two regions of the virtual attribute change the material (assumptions) boundary demarcation, while at least one 2D-3D dielectric resonator is disposed around and in the semiconductor structure; the direction of propagation of the electromagnetic wave to, electromagnetic damping area adjacent to the opposing electrode.

When the 2D-3D resonator comprises two parts, and can be conveniently realized the creation of high value components of the magnetic field, wherein the 1st (2D) part of the incident plane is disposed on the coupling conductor and a pair of electrodes in the form of a switching element, and 2nd (3D) part a by the dielectric and the reflector, is disposed in the same without an electromagnetic damping and within the region within the region with electromagnetic damping, and the change-over element is further arranged in the dielectric, wherein the reflector is vertically placed in the dielectric.

This invention adopts the electromagnetic wave power stream density (W/m²) high solar radiation spectrum. In the display of the invention, is arranged in the resonator of a semiconductor structure by the photovoltaic element in the form of light energy to electric energy with high efficiency of conversion related to characterization.

New construction of the photovoltaic element having a semiconductor structure of the major advantage of the method lies in its structure, that is, planar and spatial resonator (2D-3D resonator), which is a part of the semiconductor structure. This kind of structure does not produce the solar emission source is, for example, in the direction of the irradiation of electromagnetic wave propagation of the electromagnetic wave. The 2D-3D resonator is designed to prevent the electromagnetic wave passing through the semiconductor structure is reflected back to a created in the structure 2D-3D resonator. Therefore, resonator is shown as similar to the ideal impedance matching component of the frequency spectrum.

Disposed with the above 2D-3D resonator of the semiconductor structure is composed of two parts, that is, no electromagnetic damping and the area of the region with electromagnetic damping, the changes in the boundaries of the plane of the material attribute, at the same time with electromagnetic damping area has the function of inhibiting reflected wave. At least one 2D-3D resonator is arranged on the incident plane, in this example the incident plane equivalent to the plane of the material attribute change. These parts to ensure that the best of the electromagnetic wave; towards realizing the processing in order to prevent 2D-3D the appearance of the reflected wave of the resonator. Changes in attributes of the material in the end of the plane of the the electromagnetic damping region, with the is the relative electrode.

Importantly, is disposed on a semiconductor structure with a resonator of the photovoltaic element does not adopt this structure and its characteristic to ensure that the generated charge, but the use of these two aspects of the electromagnetic wave used for irradiation and its conversion into a static form of suitable reaction conditions of the electromagnetic field.

Another advantage lies in the donor material will be induced in the semiconductor structure materials of the [S/m] γ conductivity. This kind of structure is set in order to make the electromagnetic damping in the conductivity in the area of increased relative to the direction of the electrode. Therefore, disposed on a semiconductor structure of the photovoltaic element assembly performance can be produced the wide resonance curve (Figure 10). With the above-mentioned fig. 9 semiconductor material is improved compared with the case of no, this enables the use of complex structure in the design of tuning semiconductor structure is obviously less number of variable to obtain desired irradiation of the electromagnetic wave spectrum.

Based on the display of the invention, the described solution allows the final structure of each photovoltaic element in adjustment in the application of these elements, and can adapt to the position of the density of the irradiated electromagnetic radiation conditions. Because of this characteristic, it is possible to utilize the incident electromagnetic radiation (collection) and a maximum energy, and benefit from the radiation to provide for further use (for example, as electric energy source or generator) the desired energy form. Including the photovoltaic element of the resonator is embedded in the panel, the panel in the interconnect forming the photovoltaic field.

Description of drawings

The principle of the invention is through the use of the attached drawing and will be explained in detail, wherein the diagram 1 has described 2D-3D resonator basic configuration of the photoelectric element, Figure 2 shown disposed on a semiconductor structure including the 2D-3D resonator system and is connected with the assembly of the system of an exemplary embodiment of a photovoltaic element, Figure 3 shows the semiconductor structure is 2D-3D a schematic diagram of the resonator, Figure 4 said 2D-3D the configuration of the resonator and the reflector, Figure 5 in the photovoltaic element is described within the semiconductor structure in the area of the dielectric and reflector 2D-3D part of the resonator space arrangement, Figure 6a shown is arranged on the upper side of a dielectric and conversion assembly (formed by the reflector) of the resonator the axonometric view, Figure 6b shows a side view of the resonator, Figure 7a that has a non-linear component in the forward direction the connection of the conversion assembly, Figure 7b in the rearward direction are described with a non-linear component is connected with the conversion of the assembly, Figure 8 shows the resonance circuit is connected (the circuit is composed of a photovoltaic element and a related electronic devices), Figure 9 shows the classic resonator resonance curve, and Figure 10 by the provision of the resonance curve of the resonator.

Mode of execution

Construction is disposed on a semiconductor structure with a resonator of the photovoltaic element by the principle of the example of the detailed description provided below, but it is not limited to the example.

Figure 1 the arrangement provided on the semiconductor structure 2D-3D basic scheme of the resonator. This form of photovoltaic element is composed of two parts of a semiconductor structure 5. This two part comprises no electromagnetic damping area 5a and area with electromagnetic damping 5b, the two regions change by the material attribute of the borders of the virtual (hypothetical) 6 boundary. Furthermore, semiconductor structure 5 includes assigning the incident plane 3 at least one of on 2D-3D resonator 4, in the example the incident plane 3 is equivalent to change material properties of the border 6. On both sides of the border of changes in attributes the material 6 of the electromagnetic damping region boundaries 5b behind, the following is the relative electrode 11.

2D-3D resonator 4 in Figure 4, Figure 6a and Figure 6b are described in. This form of 2D-3D resonator 4 by the conversion assembly 8 and a reflector 7 formed, dielectric 10 (such as the insulating material) is arranged in the conversion assembly 8 and the reflector 7 between, wherein the conversion assembly 8 by the dielectric 10 surround the coupling conductor in the form of a a pair of electrodes. Furthermore, conversion assembly 8 is disposed in the dielectric 10 is, in the vertical is placed the reflector 7. Figure 5 shows a dielectric 10 is arranged in the semiconductor structure. 2D-3D resonator 4 generates a current or voltage, by means of non-linear component of the 15 is guided to the connection assembly 16 ; this situation in Figure 7a and Figure 7b can be seen in, wherein the described two types of non-linear component 15 polarization.

Figure 8 said replaceable electrical diagram of the photovoltaic element. The relevant variants mainly one-way or two-way rectifier, reshaper or signal filter. These connection type is well known. Induction by an electromagnetic wave and produce an alternating current source or an alternating voltage source 19 is connected in parallel to capacitor 1st (capacitor) 18 and the inductor 14, the said connection of the condenser/capacitor (condenser) and a coil. Furthermore, the creation of these components of the AC circuit is tuned (is tuned to and illuminate the electromagnetic wave characteristics and parameter and resonant circuit). Non-linear element 15 to the resonant circuit for shaping the signal on; then, the signal is filtered (rectifier) into a more usable shape. As a next step, achieve the 2nd capacitor 17 connection; in this connection, the capacitor (capacitor) is formed by the condenser/capacitor (condenser). And, in this connection, the specified the connection assembly 16. These assembly 16 shown voltage +U, -U. If the impedance Z in the form of the selected electric load 13 is connected to the connecting component 16 (such as the clamper), the change occurs in the resonant circuit, and the possibility of changing its characteristic of the resonator is not in a suitable degree of the resonance mode. Therefore, in the electric load 13 introduced into a device before 12. Electrical impedance Z at the output end of the same under any loading conditions, the device will be caused on at its output end with non-linear assembly 15 and 2nd capacitor 17 of the resonator is loaded with an impedance value of Zi, this will not change the setting of the resonator mode.

Including is arranged on the semiconductor structure 5 of on 2D-3D resonator 4 the function of the photovoltaic element (operation) is as follows: in the 100 nm to 100000 nm wavelength within a range of electromagnetic wave 1 irradiation in the design of the photovoltaic element of the incident plane 3 of the wave is introduced to the 2 position. 2D-3D resonator 4 is periodically repeated (as shown in Figure 1 and Figure 2 the stated). In the photovoltaic element incident plane 3 in, is arranged at least one 2D-3D resonator 4 structure/arrangement (formation). The resonator can be independently operated (to carry out its function); alternatively, the interconnections between the resonator can be realized, thereby creating the field of photovoltaic element. The incident plane 3 in, these elements are connected in parallel or connected in series, wherein at least two 2D-3D resonator 4 in a photovoltaic element is advantageous to structure/arrangement of the solution. These resonator through the connecting element 9 for interconnection.

Electromagnetic wave 1 irradiated on the incident plane 3 point 2 on. Here, electromagnetic wave 1 electric field component and a magnetic field component to decompose and form the electric field and magnetic field of the maximum intensity. This process benefits from the reflector 7 design shape, wherein the reflector 7 may take the form of a thin layer, cuboid, pyramid, cone, or a combination of these ring-shaped body, portion, penetration of the spherical. The reflector 7 can be formed by the surface of a layer of dielectric material, metal or a combination thereof and the form of the two of variant (these component is 2D-3D resonator 4 a part of the) form. In order to of two periodically repeated 2D-3D resonator 4 is realized when the connection of the above-mentioned maximum intensity (superset) arithmetically accumulating, these resonator by means of a coupling element 9 is connected (as shown in Figure 2 the stated). The picture shows a 2D-3D resonator 4 and are arranged in the semiconductor structure 5 on the recommendation of the example of the photovoltaic element, wherein two 2D-3D resonator 4 is arranged on the incident plane 3 at the position. These resonator in other semiconductor structure 5 are periodically repeated; and, 2D-3D resonator 4 through the connection assembly 9 for interconnection.

Figure 3 including the described in 2D-3D resonator 4 and are arranged in the semiconductor structure 5 of an exemplary embodiment of a photovoltaic element. This form of 2D-3D resonator 4 is arranged on the semiconductor structure 5 the upper. This kind of structure is composed of two parts, that is, no electromagnetic damping area 5a and area with electromagnetic damping 5b; these parts changes in the material properties of the virtual border 6 boundary. Photovoltaic element of each part (configuration) the mutual arrangement in Figure 4 is shown in. 2D-3D resonator 4 by the conversion assembly 8 (the coupling conductor form of a pair of electrode), reflector 7 and the dielectric 10 composition. 2D-3D resonator 4 is further embedded in the semiconductor structure 5 in; the geometrical shape is designed to depend on the wavelength of the electromagnetic wave irradiation, that is, the semiconductor structure 5 is minimum thickness of incident electromagnetic radiation of the wavelength the lowest frequency 1/4. The geometry of the proposed design will ensure that according to fig. 10 the resonance characteristic is generated.

In the irradiation to the incident plane 3 of the on, electromagnetic wave through the semiconductor structure 5. The incident plane 3 of the semiconductor structure at the position of 5 on the surface of, the resonator 4 the 2D part is modified, and 3D partial interference semiconductor structure 5 (as shown in Figure 3 or Figure 4 shown). Semiconductor structure 5 to set electromagnetic wave incident plane 3 of the maximum in the electric field component and a magnetic field component of the condition. In this regard, semiconductor structure 5 without an electromagnetic damping area of the 5a form, its function is to allow the semiconductor structure 5 the electromagnetic wave traveling on the incident plane 3 and creates a linked in the maximum resonance of the resonance region. With electromagnetic damping of regional 5b help to slow attenuation of electromagnetic wave, the traveling electromagnetic wave from the incident plane 3 to the semiconductor structure 5 on the internal structure of the advance in the direction of, and lead to the forward wave from the electrode 11 to return to the semiconductor structure 5b and 5a the minimum reflection of the situation. Electromagnetic damping area 5b is to prevent the main function of the electromagnetic wave in the semiconductor structure 5 rebound and allow the end of the generating a static electromagnetic wave. No electromagnetic damping area of the region provided with an electromagnetic dampning 5a and 5b the size of which is chosen according to the electromagnetic wave irradiation at least equal to or greater than 1 a quarter of the wavelength of a of (for example, two layers may have shown the 10 the thickness of the   m).

By implementing a resonant state, in a photovoltaic element in initial irradiation of the electromagnetic wave in the amplitude of the multiplication, and for irradiating the semiconductor structure 5 of the incident plane 3 of the electromagnetic wave on the 1 assumptions wavelength, can be obtained by the electronic circuit is 12 the voltage of the further processing, the electronic circuit 12 for energy management and design of the performance of the periodic structure and mode.

High quality conductor is used as the incident plane 3 formed in the material of the conduction path, wherein the resonator 4 the 2D part is arranged on the incident plane 3 is; the same high quality conductor is also are used to connect conductive element 9 and a non-linear element 15 of the material. No electromagnetic damping of regional 5a by the dielectric 10 and the conductive and/or semiconductive material are formed. With electromagnetic damping of regional 5b formed of a material by changing the electrical conductivity, the conductivity from the electromagnetic wave 1 incident plane 3 in the direction of increase. With electromagnetic damping area of the 5b in, with the units in the system SI(S/m) the conductivity is disposed so that is less than the coefficient of the static wave <0, 1> in the range of 0.5.

The designed semiconductor structure of a photovoltaic element 5 in the resonance state of work, this makes it possible to advantageously the resonator 4 electromagnetic wave irradiation on 1 the amplitude of the electric field component of a plurality of (2-1000 a) value. The periodic arrangement allows the work in frequency to the frequency change Δ f and f of the resonance mode. It is possible to realize the parameter Δf/f in the 0.5 to 1.5 range.

Resonant circuit using antenna and standards of the classical solutions typically makes it possible to realize Δf/f only in the ratio of 0.9 to 1.1 in a section. Because of the electromagnetic damping area 5b with respect to the wavelength of the absorption characteristics of the size of and, in the solution proposed herein allows to realize the above-mentioned ratio Δf/f. This situation can be advantageously used for design the best semiconductor structure 5 and close to and will illuminate the electromagnetic wave on the component 1 into the generator voltage related 100% the ideal state of the collecting rate.

Using basic element (complete the minimum number) as electric energy source including a necessary prerequisite for connecting with an external electronic circuit 12, this allows the circuit 12 at the output end of the load (load impedance Z13 taken from the section 0 to ∞ ohmic value) lower, circuit 12 Zi the input end of the change of the electric load of its own will not be exposed. Therefore, group of the basic component or assembly in the resonance state will be maintained.

Industry application

The described photovoltaic element can be used as electric energy of the collector or generator, also can be used as sensor or a non-linear converter.

SUMMARY of reference symbols used

1   electromagnetic wave

2   wave incident position

3   incident plane area

4   basic resonator

5   semiconductor structure

5a   has no electromagnetic damping area of the

5b the area of   an electromagnetic damping

6   material border of changes in attributes

7   basic resonant reflector

8   conversion assembly

9 connecting component of the   basic resonator

10   dielectric

11   the opposing electrode

12   circuit

13   load

14   inductor

15   non-linear component

16   connection assembly

17   2nd capacitor

18   1st capacitor

19 produce   electromagnetic induction of the current source or voltage source

For the right (according to the Treaty section 19 modification of the article)

1. A is arranged on the semiconductor structure (5) includes a resonator on the photovoltaic element, characterized in that the semiconductor structure (5) is not electromagnetic damping area (5a) and provided with an electromagnetic dampning regional (5b) forming, wherein the no electromagnetic damping area (5a) formed on the upper plane of the incident plane (3), the two regions change by the material properties of the virtual border (6) boundary, at the same time at least one 2D-3D resonator (4) is arranged in the semiconductor structure (5) in, wherein its 2D part is arranged on the incident plane (3) and its 3D part is arranged in the dielectric (10) in, and the opposing electrode (11) is adjacent to the area with electromagnetic damping (5b).

2. Photovoltaic element comprising resonator according to Claim 1, characterized in that the stated 2D-3D resonator (4) is composed of two part is formed, wherein the 1st 2D is disposed on the incident plane of the part (3) and the coupling conductor on a pair of electrodes in the form of a switching element (8) to form, and 2nd 3D part is composed of a dielectric (10) and a reflector (7) form, which is arranged on the has no electromagnetic damping area (5a) and the inside of the area with electromagnetic damping (5b) internal, at the same time the change-over element (8) is arranged in the dielectric (10) with the reflector (7) matching.

3. Photovoltaic element comprising resonator according to Claim 2, characterized in that the reflector (7) with respect to the dielectric (10) is vertically toward the incident plane (3) is arranged.

4. To the 3, including the photovoltaic element of the resonator according to Claim 1, characterized in that with the no electromagnetic damping area (5a) different, the area with electromagnetic damping (5b) in said opposite electrode (11) show the increasing in the direction of the [S/m] γ conductivity.