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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 469794. Отображено 100.
05-01-2012 дата публикации

Carbon-based memory element

Номер: US20120001142A1
Автор: Abu Sebastian, Charalampos Pozidis, Christophe P. Rossel, Daniele Caimi, Evangelos S. Eleftheriou
Принадлежит: International Business Machines Corp

One embodiment of the disclosure can provide a storage layer of a resistive memory element comprising a resistance changeable material. The resistance changeable material can include carbon. Contact layers can be provided for contacting the storage layer. The storage layer can be disposed between a bottom contact layer and a top contact layer. The resistance changeable material can be annealed at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material.

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Номер записи: 1
05-01-2012 дата публикации

Organic semiconductor material and organic thin-film transistor

Номер: US20120001162A1
Автор: Katsuhiro Mizoguchi, Keiichi Kaneto, Shuichi Nagamatsu, Shuzi Hayase, Tatsuo Okauchi, Tetsuji Moriguchi, Wataru Takashima
Принадлежит: Kyushu Institute of Technology NUC

An organic thin-film transistor comprising a gate electrode, a gate insulator layer, an organic semiconductor layer, a source electrode and a drain electrode wherein the organic semiconductor layer consists of the organic semiconductor material having the structure represented by the general formula (1) shown below, and the organic semiconductor layer has crystallinity: wherein L represents a bivalent linker group having the structure consisting of one group or any combination of two or more groups selected from unsubstituted or fluorinated benzene residue, unsubstituted or fluorinated thiophene residue, unsubstituted or fluorinated thienothophene residue; R 1 represents carbonyl group, cyano group or C 1 -C 6 fluorinated alkyl group; R 2 represents halogen atom, cyano group, carbonyl group or acetyl group.

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Номер записи: 2
05-01-2012 дата публикации

Semiconductor device

Номер: US20120001243A1
Автор: Kiyoshi Kato
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material.

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Номер записи: 3
05-01-2012 дата публикации

Semiconductor device and method of manufacturing the same

Номер: US20120001258A1
Автор: Wan Soo Kim
Принадлежит: Hynix Semiconductor Inc

A semiconductor device includes a gate metal buried within a trench included in a semiconductor substrate including an active region defined by an isolation layer, a spacer pattern disposed on an upper portion of a sidewall of a gate metal, a first gate oxide layer disposed between the spacer pattern and the trench, a second gate oxide layer disposed below the first gate oxide layer and the gate metal, and a junction region disposed in the active region to overlap the first gate oxide layer.

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Номер записи: 4
05-01-2012 дата публикации

Hall sensor

Номер: US20120001280A1
Автор: Takaaki Hioka, Toshihiko Omi
Принадлежит: Seiko Instruments Inc

Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. The Hall element includes: a Hall sensing portion having a shape of a cross and four convex portions; Hall voltage output terminals which are arranged at the centers of the front edges of the four convex portions, respectively; and control current input terminals which are arranged on side surfaces of each of the convex portions independently of the Hall voltage output terminals. In this case, the Hall voltage output terminal has a small width and the control current input terminal has a large width.

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Номер записи: 5
05-01-2012 дата публикации

Magnetic storage element and magnetic memory

Номер: US20120001281A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Yutaka Higo
Принадлежит: Sony Corp

Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.

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Номер записи: 6
05-01-2012 дата публикации

Semiconductor Constructions

Номер: US20120001299A1
Автор: Todd Jackson Plum
Принадлежит: Micron Technology Inc

Some embodiments include methods of forming capacitors. A first section of a capacitor may be formed to include a first storage node, a first dielectric material, and a first plate material. A second section of the capacitor may be formed to include a second storage node, a second dielectric material, and a second plate material. The first and second sections may be formed over a memory array region, and the first and second plate materials may be electrically connected to first and second interconnects, respectively, that extend to over a region peripheral to the memory array region. The first and second interconnects may be electrically connected to one another to couple the first and second plate materials to one another. Some embodiments include capacitor structures, and some embodiments include methods of forming DRAM arrays.

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Номер записи: 7
05-01-2012 дата публикации

Method and device for harvesting energy from ocean waves

Номер: US20120001427A1
Автор: Balakrishnan Nair, Sivaraman Guruswamy
Принадлежит: Individual

A method and device for generating electricity from ocean waves. The device includes at least one magnetostrictive element and one or more electrically conductive coils or circuits. When the magnetostrictive element is deployed in a body of water, the motion of the body of water, including wave motion, causes changes in the strain of the magnetostrictive element. The electrically conductive coil or circuit is within the vicinity of the magnetostrictive element. A corresponding change in magnetic field around the magnetostrictive element generates an electric voltage and/or electric current in the electrically conductive coil or circuit.

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Номер записи: 8
05-01-2012 дата публикации

Dense Nanoscale Logic Circuitry

Номер: US20120001653A1
Автор: Dmitri Borisovich Strukov, Philip J. Kuekes
Принадлежит: Hewlett Packard Development Co LP

One embodiment of the present invention is directed to hybrid-nanoscale/microscale device comprising a microscale layer that includes microscale and/or submicroscale circuit components and that provides an array of microscale or submicroscale pins across an interface surface; and at least two nanoscale-layer sub-layers within a nanoscale layer that interfaces to the microscale layer, each nanoscale-layer sub-layer containing regularly spaced, parallel nanowires, each nanowire of the at least two nanoscale-layer sub-layers in electrical contact with at most one pin provided by the microscale layer, the parallel nanowires of successive nanoscale-layer sub-layers having different directions, with the nanowires of successive nanoscale-layer sub-layers intersecting to form programmable crosspoints.

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Номер записи: 9
05-01-2012 дата публикации

High-precision resistor and trimming method thereof

Номер: US20120001679A1
Автор: Antonello Santangelo, Stefania Maria Serena PRIVITERA
Принадлежит: STMICROELECTRONICS SRL

An embodiment of an electrically trimmable electronic device, wherein a resistor of electrically modifiable material is formed by a first generally strip-shaped portion and by a second generally strip-shaped portion, which extend transversely with respect to one another and are in direct electrical contact in a crossing area. The first and second portions have respective ends connected to own contact regions, coupled to a current pulse source and are made of the same material or of the same composition of materials starting from a same resistive layer of the material having electrically modifiable resistivity, for example, a phase-change material, such as a Ge—Sb—Te alloy, or polycrystalline silicon, or a metal material used for thin-film resistors. The trimming is performed by supplying a trimming current to the second portion so as to heat the crossing area and modify the resistivity thereof, without flowing longitudinally in the first portion.

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Номер записи: 10
05-01-2012 дата публикации

Nanoelectronic differential amplifiers and related circuits implemented on a segment of a graphene nanoribbon

Номер: US20120001689A1
Автор: Lester F. Ludwig
Принадлежит: Pike Group LLC

A multiple transistor differential amplifier is implemented on a segment of a single graphene nanoribbon. Differential amplifier field effect transistors are formed on the graphene nanoribbon from a first group of electrical conductors in contact with the graphene nanoribbon and a second group of electrical conductors insulated from, but exerting electric fields on, the graphene nanoribbon thereby forming the gates of the field effect transistors. A transistor in one portion of the graphene nanoribbon and a transistor in another portion of the graphene nanoribbon are responsive to respective incoming electrical signals. A current source, also formed on the graphene nanoribbon, is connected with the differential amplifier, and the current source and the differential amplifier operating together generate an outgoing signal responsive to the incoming electrical signal. In an example application, the resulting circuit can be used to interface with electrical signals of nanoscale sensors and actuators,

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Номер записи: 11
05-01-2012 дата публикации

CPP-Type Magnetoresistive Element Including Spacer Layer

Номер: US20120002330A1
Автор: Hironobu Matsuzawa, Yoshihiro Tsuchiya
Принадлежит: TDK Corp

An MR element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and second ferromagnetic layers. The spacer layer includes a nonmagnetic metal layer, a first oxide semiconductor layer, and a second oxide semiconductor layer that are stacked in this order. The nonmagnetic metal layer is made of Cu, and has a thickness in the range of 0.3 to 1.5 nm. The first oxide semiconductor layer is made of a Ga oxide semiconductor, and has a thickness in the range of 0.5 to 2.0 nm. The second oxide semiconductor layer is made of a Zn oxide semiconductor, and has a thickness in the range of 0.1 to 1.0 nm.

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Номер записи: 12
05-01-2012 дата публикации

Methods, structures, and devices for reducing operational energy in phase change memory

Номер: US20120002465A1
Автор: Roy E. Meade
Принадлежит: Micron Technology Inc

Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.

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Номер записи: 13
05-01-2012 дата публикации

Storage apparatus

Номер: US20120002466A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Yutaka Higo
Принадлежит: Sony Corp

Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device.

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Номер записи: 14
05-01-2012 дата публикации

Traffic load control in a mesh network

Номер: US20120002547A1
Автор: Gilles Picard
Принадлежит: Itron Inc

The present technology relates to protocols relative to utility meters associated with an open operational framework. More particularly, the present subject matter relates to protocol subject matter for advanced metering infrastructure, adaptable to various international standards, while economically supporting a 2-way mesh network solution in a wireless environment, such as for operating in a residential electricity meter field. The present subject matter supports meters within an ANSI standard C12.22/C12.19 system while economically supporting a 2-way mesh network solution in a wireless environment, such as for operating in a residential electricity meter field, all to permit cell-based adaptive insertion of C12.22 meters within an open framework. Cell isolation is provided through quasi-orthogonal sequences in a frequency hopping network. Additional features relate to apparatus and methodology subject matters concerning Traffic Load Control in a Mesh Network.

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Номер записи: 15
05-01-2012 дата публикации

Biological control of nanoparticle nucleation, shape and crystal phase

Номер: US20120003629A9
Автор: Angela Belcher, Esther Ryan, Richard Smalley, Seung-Wuk Lee
Принадлежит: University of Texas System

The present invention includes compositions and methods for selective binding of amino acid oligomers to semiconductor and elemental carbon-containing materials. One form of the present invention is a method for controlling the particle size of the semiconductor or elemental carbon-containing material by interacting an amino acid oligomer that specifically binds the material with solutions that can result in the formation of the material. The same method can be used to control the aspect ratio of the nanocrystal particles of the semiconductor material. Another form of the present invention is a method to create nanowires from the semiconductor or elemental carbon-containing material. Yet another form of the present invention is a biologic scaffold comprising a substrate capable of binding one or more biologic materials, one or more biologic materials attached to the substrate, and one or more elemental carbon-containing molecules attached to one or more biologic materials.

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Номер записи: 16
05-01-2012 дата публикации

Methods of Forming Nonvolatile Memory Devices Having Vertically Integrated Nonvolatile Memory Cell Sub-Strings Therein and Nonvolatile Memory Devices Formed Thereby

Номер: US20120003800A1
Автор: Changhyun LEE, Hansoo Kim, Jaehoon Jang, Kihyun Kim, Sunghoi Hur, Sunil Shim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Methods of forming nonvolatile memory devices according to embodiments of the invention include techniques to form highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series.

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Номер записи: 17
27-06-2016 дата публикации

Термоэлектрический генератор бытовой с жидкостным охлаждением

Номер: RU0000162936U1
Автор: Василий Николаевич Звездин, Георгий Витальевич Кислицин
Принадлежит: Федеральное бюджетное учреждение науки "Федеральный научный центр медико-профилактических технологий управления рисками здоровью населения" (ФБУН "ФНЦ медико-профилактических технологий управления рисками здоровью населения")

1. Термоэлектрический генератор бытовой с жидкостным охлаждением, включающий охлаждающий теплообменник, выполненный в виде сосуда для охлаждающего агента, горячий теплообменник, размещенный между ними термоэлектрический генераторный модуль, имеющий «горячие» и «холодные» горизонтальные поверхности, и токоотводы, отличающийся тем, что горячий теплообменник выполнен в виде полой емкости, обращенной дном к дну сосуда для охлаждающего агента охлаждающего теплообменника, горизонтальные «горячие» и «холодные» поверхности термоэлектрического генераторного модуля снабжены слоем теплопроводящей пасты, а участки дна емкости горячего теплообменника и дна сосуда охлаждающего теплообменника, свободные от наличия поверхностей указанного модуля, снабжены слоем термостойкого силиконового клея-герметика, причем боковые стенки емкости и сосуда покрыты теплоизолирующим материалом, при этом генератор дополнительно содержит защитный раструб в форме усеченного полого конуса, обращенного стороной нижнего основания с большим диаметром в сторону охлаждающего теплообменника, который стороной верхнего основания с меньшим диаметром закреплен в зоне размещения термоэлектрического генераторного модуля у дна охлаждающего сосуда, причем высота указанного конуса составляет величину 80% высоты боковой стенки сосуда, а соотношение его малого диаметра к большому составляет 1:1,2 соответственно.2. Генератор по п. 1, отличающийся тем, что усеченный полый конус выполнен в виде набора трапециевидных лепестков, закрепленных одной стороной в зоне установки термоэлектрического генераторного модуля и выполненных с возможностью «зонтичного» раскры РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК H01L 35/30 (13) 162 936 U1 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ТИТУЛЬНЫЙ (21)(22) Заявка: ЛИСТ ОПИСАНИЯ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ 2015152883/28, 09.12.2015 (24) Дата начала отсчета срока действия патента: 09.12.2015 (45) Опубликовано: 27.06.2016 Бюл. № 18 1 6 2 9 3 6 R U (57) Формула полезной ...

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Номер записи: 18
26-12-2017 дата публикации

Оптоволоконный сверхпроводниковый однофотонный детектор

Номер: RU0000176010U1
Автор: Андрей Михайлович Ионов, Владимир Максимович Черняк, Сергей Иванович Божко, Сергей Николаевич Молотков, Сергей Павлович Кулик
Принадлежит: Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ

Использование: для детекторов оптического излучения с высокой квантовой эффективностью. Сущность полезной модели заключается в том, что сверхпроводниковый однофотонный детектор представляет собой оптический модуль на базе оптической розетки FC и включает криогенный предусилитель и сменный модуль с отрезком оптической ферулы с одномодовым волокном, при этом на боковых поверхностях модуля сформированы золотые контактные площадки, а на коре оптического волокна сформированы чувствительные слои из сверхпроводника в виде меандровой структуры, причем меандровая структура представляет собой два меандра, ориентированных ортогонально друг другу и разделенных слоем диэлектрика толщиной, равной четверти длины волны. Технический результат: обеспечение возможности повышения общей эффективности SSPD без усложнения его конструкции. 4 ил. Ц 1 176010 ко РОССИЙСКАЯ ФЕДЕРАЦИЯ 1 11 ее аа а за (1 ВУ 175 04101 (51) МПК ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ НО. 39/00 (2006.01) (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК НОГ. 39/24 (2006.01) (21)(22) Заявка: 2017117185, 17.05.2017 (72) Автор(ы): (24) Дата начала отсчета срока действия патента: 17.05.2017 Дата регистрации: 26.12.2017 Приоритет(ь): (22) Дата подачи заявки: 17.05.2017 (45) Опубликовано: 26.12.2017 Бюл. № 36 Адрес для переписки: 121059, Москва, Бережковская наб., 22, стр. 3, Фонд перспективных исследований, генеральному директору А.И. Григорьеву Божко Сергей Иванович (КО), Кулик Сергей Павлович (КО), Молотков Сергей Николаевич (КП), Ионов Андрей Михайлович (КО), Черняк Владимир Максимович (КП) (73) Патентообладатель(и): Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ (ВО) (56) Список документов, цитированных в отчете о поиске: КО 2346357 С1, 10.02.2009. ВО 2539771 СЛ, 27.01.2015. ВЧ 2581405 СТ, 20.04.2016. 05 9500519 В2, 22.11.2016. 05 7049593 В2, 23.05.2006. 05 20140353476 АТ, 04.12.2014. (54) Оптоволоконный сверхпроводниковый однофотонный детектор (57) Реферат: ...

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Номер записи: 19
25-09-2018 дата публикации

Высоковольтное токоограничивающее устройство на основе высокотемпературной сверхпроводимости

Номер: RU0000183512U1
Автор: Дарья Александровна Горбунова, Дмитрий Викторович Сотников, Кирилл Александрович Бабурин
Принадлежит: Закрытое акционерное общество "СуперОкс" (ЗАО "СуперОкс")

Полезная модель относится к области электротехники, в частности к высоковольтным токоограничивающим сильноточным устройствам на основе высокотемпературной сверхпроводимости (ВТСП ТОУ) и может найти применение для последовательного включения в сеть 220 кВ для ограничения токов короткого замыкания. ВТСП ТОУ, содержит горизонтальный цилиндрический криостат с внутренней и внешней стенками, образующими объем для размещения криогенной среды; установленную в криостате ВТСП сборку соосно размещенных токоограничивающих модулей ограничителя тока; колодцы, размещенные в верхней части криостата, входящие в его состав; вертикально установленные в колодцах подводящий и отводящий токовводы, где каждый токоввод одним концом соединен со сборкой упомянутых модулей, а вторым концом - с электрической сетью, при этом, каждый упомянутый токоввод представляет собой электрический проводник, содержащий последовательно расположенные изолирующую оболочку, выполненную из пропитанного электроизоляционной смолой нетканого гидрофобного материала и монолитную защитную оболочку из диэлектрического эластичного материала. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 183 512 U1 (51) МПК H02H 9/02 (2006.01) H01L 39/16 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H02H 9/02 (2006.01); H01L 39/16 (2006.01) (21)(22) Заявка: 2018122672, 21.06.2018 (24) Дата начала отсчета срока действия патента: Дата регистрации: (73) Патентообладатель(и): Закрытое акционерное общество "СуперОкс" (ЗАО "СуперОкс") (RU) 25.09.2018 (56) Список документов, цитированных в отчете о поиске: RU 2453961 C1, 20.06.2012. RU (45) Опубликовано: 25.09.2018 Бюл. № 27 1 8 3 5 1 2 R U 89783 U1, 10.12.2009. RU 2126568 C1, 20.02.1999. US 5063472 A1, 05.11.1991. (54) ВЫСОКОВОЛЬТНОЕ ТОКООГРАНИЧИВАЮЩЕЕ УСТРОЙСТВО НА ОСНОВЕ ВЫСОКОТЕМПЕРАТУРНОЙ СВЕРХПРОВОДИМОСТИ (57) Реферат: Полезная модель относится к области верхней части криостата, входящие в его состав; электротехники, в частности к ...

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Номер записи: 20
08-11-2018 дата публикации

Магнитопьезофибер

Номер: RU0000184785U1
Автор: Виктор Сергеевич Леонтьев, Геннадий Алексеевич Семенов, Мирза Имамович Бичурин, Сергей Николаевич Иванов
Принадлежит: федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого"

Полезная модель относится к области радиоэлектроники и может быть использована при разработке таких устройств, как высокочувствительные датчики постоянного магнитного поля, переменного магнитного поля, постоянного тока, переменного тока, преобразователи, гираторы, источники возобновляемой энергии и других устройств. Сущность: магнитопьезофибер состоит из пьезоэлектрических волокон в полимерной матрице, покрытых с двух сторон полиимидной пленкой с встречно-штыревыми электродами и магнитострикционными слоями. Магнитострикционные слои выполнены в виде волокон, которые наносятся с двух сторон пьезоэлектрических волокон в полиимидной пленке поверх встречно-штыревых электродов, покрытых изолирующей пленкой. Ширина и центральные оси магнитострикционных и пьезоэлектрических волокон совпадают. Технический результат: повышение значения магнитоэлектрического эффекта. 2 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 184 785 U1 (51) МПК H01L 41/083 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 41/083 (2006.01) (21)(22) Заявка: 2018128132, 31.07.2018 (24) Дата начала отсчета срока действия патента: Дата регистрации: 08.11.2018 (45) Опубликовано: 08.11.2018 Бюл. № 31 20180033947 A1, 01.02.2018. US 7771846 B2, 10.08.2010. RU 2363074 C1, 27.07.2009. RU 2491684 C2 27.08.2013. (54) МАГНИТОПЬЕЗОФИБЕР (57) Реферат: Полезная модель относится к области радиоэлектроники и может быть использована при разработке таких устройств, как высокочувствительные датчики постоянного магнитного поля, переменного магнитного поля, постоянного тока, переменного тока, преобразователи, гираторы, источники возобновляемой энергии и других устройств. Сущность: магнитопьезофибер состоит из пьезоэлектрических волокон в полимерной матрице, покрытых с двух сторон полиимидной R U 1 8 4 7 8 5 (56) Список документов, цитированных в отчете о поиске: US 9735341 B2, 15.08.2017. US Стр.: 1 пленкой с встречно-штыревыми электродами и магнитострикционными ...

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Номер записи: 21
06-06-2019 дата публикации

Конструкция преобразователя магнитного поля на основе наноструктур, обладающих гигантским магниторезистивным эффектом

Номер: RU0000189844U1
Автор: Владимир Викторович Амеличев, Дмитрий Андреевич Жуков, Дмитрий Валентинович Костюк, Дмитрий Вячеславович Васильев, Евгений Павлович Орлов, Петр Алексеевич Беляков, Юрий Владимирович Казаков
Принадлежит: Российская Федерация, от имени которой выступает Федеральное государственное казенное учреждение "Войсковая часть 68240"

Полезная модель относится к микроэлектронике и может быть использована в конструкциях датчиков магнитного поля и магнитополупроводниковых микросистем.Конструкция преобразователя магнитного поля на основе наноструктур, обладающих гигантским магниторезистивным эффектом, содержит кристалл 1 и четыре магниторезистора, выполненных на поверхности кристалла, соединенных слоем алюминия в мостовую схему Уинстона с расположением активных плеч 2 между двумя концентраторами магнитного поля 3 из магнитомягкого материала и опорных плеч 4, расположенных под экранами 5. Концентраторы магнитного поля 3 размещены в заглублениях 6, выполненных в кристалле 1. Вдоль концентраторов магнитного поля 3 размещены экраны 5, выполненные из магнитомягкого материала. На обратной стороне кристалла 1 дополнительно установлен магнит 7 с расположением полюсов магнита под концентраторами магнитного поля 3. Магниторезисторы выполнены из многослойных тонкопленочных наноструктур с гигантским магниторезистивным эффектом.Технический результат, получаемый при реализации заявляемой полезной модели, выражается в обеспечении возможности определения направления вектора магнитного поля за счет формирования нечетной выходной характеристики преобразователя магнитного поля с сохранением чувствительности преобразователя магнитного поля без увеличения энергопотребления. 1 з.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 189 844 U1 (51) МПК H01L 43/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 43/00 (2018.08) (21)(22) Заявка: 2018139669, 08.11.2018 (24) Дата начала отсчета срока действия патента: Дата регистрации: 06.06.2019 (73) Патентообладатель(и): Российская Федерация, от имени которой выступает федеральное государственное казенное учреждение "Войсковая часть 68240" (RU) (45) Опубликовано: 06.06.2019 Бюл. № 16 Адрес для переписки: 107031, Москва, Войсковая часть 1125 1 8 9 8 4 4 R U 2568148 C1, 10.11.2015. RU 2636141 C1, 20.11.2017. ...

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Номер записи: 22
28-06-2019 дата публикации

Электрогенерирующее устройство на основе термоэлектричества и детандирования газа

Номер: RU0000190354U1
Автор: Анатолий Петрович Черных
Принадлежит: Анатолий Петрович Черных

Полезная модель относится к оборудованию энергетических установок, генерирующих электроэнергию, и предназначена для использования на объектах газовой промышленности.Традиционный способ выработки электрической энергии основан на использовании при редуцировании сжатого газа эффектов Ранка-Хилша и Зеебека.В полезной модели предлагается использовать устройство электроснабжения, в котором термоэлектрический генератор, снабженный стальным цилиндром, выполненным в виде короткозамкнутого витка и контактирующим с термоэлектрическими элементами цилиндрической формы, газовой турбиной, выполненной с возможностью вращения магнитного ротора в стальном цилиндре, и сопловым направляющим аппаратом перед лопатками газовой турбины.Технический результат от использования предлагаемой полезной модели - увеличение эффективности использования перепада давления на газораспределительных пунктах за счет внедрения источника электроэнергии с приводом от турбины, помещенной в газовый поток. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 190 354 U1 (51) МПК F17D 1/04 (2006.01) H01L 35/28 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК F17D 1/04 (2019.02); H01L 35/28 (2019.02) (21)(22) Заявка: 2018137420, 24.10.2018 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): Черных Анатолий Петрович (RU) Дата регистрации: 28.06.2019 (56) Список документов, цитированных в отчете о поиске: RU 2417337 C2, 27.04.2011. RU 2534443 C2, 27.11.2014. RU 139787 U1, 20.04.2014. UA 78571 U, 25.03.2013. JP 2001342848 A, 14.12.2001. (45) Опубликовано: 28.06.2019 Бюл. № 19 R U (54) ЭЛЕКТРОГЕНЕРИРУЮЩЕЕ УСТРОЙСТВО НА ОСНОВЕ ТЕРМОЭЛЕКТРИЧЕСТВА И ДЕТАНДИРОВАНИЯ ГАЗА (57) Реферат: Полезная модель относится к оборудованию короткозамкнутого витка и контактирующим с энергетических установок, генерирующих термоэлектрическими элементами электроэнергию, и предназначена для цилиндрической формы, газовой турбиной, использования на объектах газовой ...

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Номер записи: 23
22-08-2019 дата публикации

Сверхпроводящее защитное устройство радиоприемных устройств с автокомпенсатором

Номер: RU0000191803U1
Автор: Алексей Иванович Харланов, Ирина Алексеевна Кружилина, Николай Васильевич Чернявский
Принадлежит: Федеральное государственное казенное военное образовательное учреждение высшего образования "Военный учебно-научный центр Военно-Морского Флота "Военно-морская академия им. Адмирала Флота Советского Союза Н.Г. Кузнецова"

Использование: для защиты устройств радиоэлектронной аппаратуры. Сущность полезной модели заключается в том, что сверхпроводящее защитное устройство радиоприемных устройств с автокомпенсатором состоит из тонкой пленки высокотемпературного сверхпроводника в виде микрополосковой линии передачи, которая подключается к коаксиальному кабелю входной цепи антенно-фидерного устройства последовательно при помощи коаксиально-полосковых переходов и помещается в термостат с жидким азотом, при этом переход из сверхпроводящего в нормальное состояние ускоряется внешним подмагничиванием, источником внешнего магнитного поля является цепь автокомпенсатора, состоящая из независимой от радиоприемного устройства вспомогательной антенны, последовательно соединенной с катушкой подмагничивания, способной функционировать при переменных токах, наводимых мощными электромагнитными излучениями на вспомогательной антенне с техническими характеристиками и условиями установки идентичными основной антенне радиоприемника. Технический результат: обеспечение возможности эффективной защиты от мощного электромагнитного излучения. 2 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 191 803 U1 (51) МПК H01L 39/16 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 39/16 (2019.05) (21)(22) Заявка: 2019114608, 13.05.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 22.08.2019 (45) Опубликовано: 22.08.2019 Бюл. № 24 U 1 1 9 1 8 0 3 R U (56) Список документов, цитированных в отчете о поиске: RU 2221314 C1, 10.01.2004. EP 2945199 A1, 18.11.2015. RU 2576243 C1, 27.02.2016. EP 503447 A2, 16.09.1992. RU 2126568 C1, 20.02.1999. Д.Б. Кучер, А.И. Харланов, М.В. Степанова, Экспериментальная оценка влияния внешнего подмагничивания тонкой высокотемпературной сверхпроводящей пленки на характеристики активых датчиковограничителей, (см. прод.) (54) СВЕРХПРОВОДЯЩЕЕ ЗАЩИТНОЕ УСТРОЙСТВО РАДИОПРИЕМНЫХ УСТРОЙСТВ С АВТОКОМПЕНСАТОРОМ (57) Реферат: ...

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Номер записи: 24
25-11-2019 дата публикации

Токоограничивающее устройство на основе высокотемпературной сверхпроводимости

Номер: RU0000194013U1
Автор: Анастасия Игоревна Тельнова, Дмитрий Викторович Сотников, Кирилл Александрович Бабурин, Ленар Робертович Сабиров
Принадлежит: Закрытое акционерное общество "СуперОкс" (ЗАО "СуперОкс")

Полезная модель относится к области электротехники, в частности к высоковольтному оборудованию - высокотемпературным сверхпроводящим токоограничивающим устройствам (далее ВТСП ТОУ), работающим в среде жидкого азота в сетях 35-750 кВ. Высоковольтное токоограничивающее устройство на основе высокотемпературной сверхпроводимости, содержащее: горизонтальный цилиндрический криостат; размещенную в криостате сборку соосно расположенных сверхпроводящих токоограничивающих модулей, нанизанных на центральную опору, где упомянутая сборка установлена, по меньшей мере, на двух парах опорных изоляторов, изоляционная часть которых выполнена в форме стержней с частично гофрированной внешней поверхностью, при этом изоляторы в каждой паре одним концом закреплены на центральной опоре, а другим - прикреплены к внутренней поверхности криостата и подводящий и отводящий изолированные токовводы, где каждый токоввод одним концом соединен со сборкой упомянутых модулей, а вторым концом - с электрической сетью. Полезная модель позволяет устранить рост напряженности электрического поля между сборкой токоограничивающих модулей и заземленными стенками криостата и увеличить электрическую прочность ВТСП ТОУ. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 194 013 U1 (51) МПК H02H 9/02 (2006.01) H01L 39/16 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H02H 9/02 (2019.08); H01L 39/16 (2019.08) (21)(22) Заявка: 2019127988, 05.09.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 25.11.2019 (45) Опубликовано: 25.11.2019 Бюл. № 33 1 9 4 0 1 3 R U (54) ТОКООГРАНИЧИВАЮЩЕЕ УСТРОЙСТВО НА ОСНОВЕ ВЫСОКОТЕМПЕРАТУРНОЙ СВЕРХПРОВОДИМОСТИ (57) Реферат: Полезная модель относится к области изоляционная часть которых выполнена в форме электротехники, в частности к высоковольтному стержней с частично гофрированной внешней оборудованию высокотемпературным поверхностью, при этом изоляторы в каждой паре сверхпроводящим токоограничивающим одним ...

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Номер записи: 25
13-02-2020 дата публикации

Трехкоординатное устройство позиционирования

Номер: RU0000196011U1
Автор: Александр Анатольевич Темиров, Александр Михайлович Кислюк, Андрей Андреевич Полисан, Андрей Владимирович Турутин, Илья Викторович Кубасов, Михаил Давыдович Малинкович, Юрий Николаевич Пархоменко
Принадлежит: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС"

Использование: для трехкоординатного точного позиционирования объектов с помощью пьезоэлектрических актюаторов. Сущность полезной модели заключается в том, что трехкоординатное устройство позиционирования состоит из держателя объекта и корпуса, на котором закреплены три привода, представляющие собой гибкие толкатели с подвижным элементом и содержащие пьезоэлектрические элементы, работающие на изгибной деформации, в качестве пьезоэлектрического элемента, работающего на изгибной деформации, используют бидоменные монокристаллические сегнетоэлектрические пластины, соединенные по трем координатам попарно упругими толкателями. Технический результат: увеличение точности позиционирования и силы смещения, а также увеличение температурной и вибрационной стабильности. 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 196 011 U1 (51) МПК H01L 41/09 (2006.01) H02N 2/02 (2006.01) H01J 37/26 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 41/09 (2020.01); H02N 2/02 (2020.01); H01J 37/26 (2020.01) (21)(22) Заявка: 2019141266, 13.12.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 13.02.2020 (45) Опубликовано: 13.02.2020 Бюл. № 5 Адрес для переписки: 119991, Москва, ГСП-1, В-49, Ленинский пр-кт, 4, НИТУ "МИСиС", Отдел интеллектуальной собственности 1 9 6 0 1 1 U 1 (56) Список документов, цитированных в отчете о поиске: SU 1453475 A1, 23.01.1989. RU 2297078 C1, 10.04.2007. RU 2566142 C2, 20.10.2015. RU 2239906 C2, 10.11.2004. US 7652409 B2, 26.01.2010. (54) Трехкоординатное устройство позиционирования (57) Реферат: Использование: для трехкоординатного точного позиционирования объектов с помощью пьезоэлектрических актюаторов. Сущность полезной модели заключается в том, что трехкоординатное устройство позиционирования состоит из держателя объекта и корпуса, на котором закреплены три привода, представляющие собой гибкие толкатели с подвижным элементом и содержащие пьезоэлектрические элементы, ...

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Номер записи: 26
09-03-2021 дата публикации

Термоэлектрический генератор

Номер: RU0000202800U1
Автор: Владимир Рамазанович Мухаметшин
Принадлежит: Владимир Рамазанович Мухаметшин

Полезная модель относится к области преобразования тепловой энергии (например, инфракрасного излучения) в электрическую энергию Технический результат: повышение мощности и эффективности термоэлектрического генератора при уменьшении габаритов. Сущность: термоэлектрический генератор содержит два проводника с промежуточным слоем между ними, выполненным из магнитно направленных частиц аллотропного углерода. Один из проводников является приемником инфракрасных излучений, а второй проводник - приемником магнитных волн. Последний может быть выполнен в виде спирали и расположен на промежуточном слое, который может содержать заполнитель. Заполнитель может содержать жидкое стекло или эмаль, или глину, или цемент. 5 з.п. ф-лы, 2 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 202 800 U1 (51) МПК H01L 35/32 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 35/32 (2021.02) (21)(22) Заявка: 2020129183, 03.09.2020 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): Мухаметшин Владимир Рамазанович (RU) Дата регистрации: 09.03.2021 Приоритет(ы): (22) Дата подачи заявки: 03.09.2020 (45) Опубликовано: 09.03.2021 Бюл. № 7 2 0 2 8 0 0 R U (54) ТЕРМОЭЛЕКТРИЧЕСКИЙ ГЕНЕРАТОР (57) Реферат: Полезная модель относится к области преобразования тепловой энергии (например, инфракрасного излучения) в электрическую энергию Технический результат: повышение мощности и эффективности термоэлектрического генератора при уменьшении габаритов. Сущность: термоэлектрический генератор содержит два проводника с промежуточным слоем между ними, выполненным из магнитно Стр.: 1 направленных частиц аллотропного углерода. Один из проводников является приемником инфракрасных излучений, а второй проводник приемником магнитных волн. Последний может быть выполнен в виде спирали и расположен на промежуточном слое, который может содержать заполнитель. Заполнитель может содержать жидкое стекло или эмаль, или глину, или цемент. 5 з.п. ф-лы ...

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Номер записи: 27
12-01-2012 дата публикации

Dye for dye-sensitized solar cells, method of preparing the same, and solar cell including the dye

Номер: US20120006410A1
Автор: Byong-Cheol Shin, Do-Young Park, Ji-won Lee, Moon-Sung Kang, Si-Young Cha
Принадлежит: Samsung SDI Co Ltd

A dye for dye-sensitized solar cells includes an organometallic complex represented by M(L) p X 2 :(Z) q . In the organometallic complex, M is a Group 8 through Group 10 metallic element, L is a bidentate ligand, X is a co-ligand, and Z is a counter-ion. The ratio of the bidentate ligand (L) to the counter-ion (Z) is about 1.1 to about 1.4. A method of preparing an exemplary dye includes mixing the organometallic complex with tetrabutylammonium thiocyanate and tetrabutylammonium hydroxide to prepare a solution, and purifying the solution at a pH of about 3.8 to about 4.1. A dye-sensitized solar cell includes a first electrode with a light absorbing layer, a second electrode and an electrolyte between the first and second electrodes. The light absorbing layer includes the dye.

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Номер записи: 28
12-01-2012 дата публикации

Novel liquid-crystalline compound and organic semiconductor device containing the compound

Номер: US20120007062A1
Автор: Tetsuharu Miwa, YASUYUKI Sasada
Принадлежит: JNC Corp

Disclosed is a visible light-transmissive liquid-crystalline compound having good hole and electron-transport characteristics and useful as an organic semiconductor material. The compound is represented by a formula (1): wherein R independently represents hydrogen, or alkyl having from 1 to 24 carbon atoms, and any —CH 2 — in the alkyl may be replaced by —O—, —S—, —CO— or —SiH 2 —, any —(CH 2 ) 2 — may be replaced by —CH≡CH— or —C═C—, and any hydrogen may be replaced by halogen; Ar represents naphthylene, anthrylene, phenanthrylene, or phenylene; and every hydrogen in phenylene is replaced by halogen, and any hydrogen in naphthylene, anthrylene and phenanthrylene may be replaced by halogen.

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Номер записи: 29
12-01-2012 дата публикации

Area Sensor and Display Apparatus Provided With An Area Sensor

Номер: US20120007090A1
Автор: Hajime Kimura, Jun Koyama, Masato Yonezawa, Shunpei Yamazaki, Yu Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

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Номер записи: 30
12-01-2012 дата публикации

Method for Manufacturing Thin Film Transistor, and Thin Film Transistor

Номер: US20120007092A1
Автор: Jun Yamada
Принадлежит: KONICA MINOLTA INC

Disclosed is a method for manufacturing a thin film transistor in which a semiconductor film in a channel portion is provided between a source electrode and a drain electrode, wherein a partition layer (a bank) can be appropriately formed. The method comprises the steps of: forming two underlying electrodes on an underlying layer; forming a partition layer on the surface of the underlying layer containing the two underlying electrodes so as to surround an area where the source electrode and the drain electrode are to be formed; forming the source electrode and the drain electrode by a plating method on the surfaces of the two underlying electrodes, which are surrounded by the partition layer; and applying semiconductor solution, in which a semiconductor material is dissolved or dispersed, to the area surrounded by the partition layer so that a semiconductor film is formed in the area.

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Номер записи: 31
12-01-2012 дата публикации

Organic light emitting diode display and manufacturing method thereof

Номер: US20120007107A1
Автор: Jung-mi Choi
Принадлежит: Samsung Mobile Display Co Ltd

An organic light emitting diode (OLED) display includes: a first substrate; a display portion that is formed on the first substrate and includes a driving circuit portion and an organic light emitting diode; a thin film encapsulation layer that covers the display portion; an adhesive layer that covers an upper surface and a side of the thin film encapsulation layer; an absorption functional layer that is formed on the adhesive layer and absorbs at least one of oxygen and moisture; and a second substrate that is formed on the absorption functional layer.

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Номер записи: 32
12-01-2012 дата публикации

Planar light emitting device

Номер: US20120007134A1
Автор: Koki Fujihara, Shingo Houzumi, Takao Miyai, Yoshikazu Kuzuoka
Принадлежит: Panasonic Corp, Panasonic Electric Works Co Ltd

Planar light emitting device includes: anode and cathode feeding parts formed on first surface side of transparent substrate and electrically connected to quadrilateral planar anode and cathode, respectively; quadrilateral frame shaped anode auxiliary electrode formed at the whole circumference of surface of the planar anode; anode feeding auxiliary electrode integrally and continuously formed to the auxiliary electrode and laminated on anode feeding part. Light emitting part is formed of a region where only organic layer intervenes between the planar anode and cathode. Distance between predetermined two parallel sides of the four sides of the light emitting part and the peripheral border of the transparent substrate is smaller than distance between the other two parallel sides and the peripheral border. The cathode and anode feeding parts are located along said other two parallel sides. The anode feeding part is located at each side, in width direction, of the cathode feeding part.

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Номер записи: 33
12-01-2012 дата публикации

Semiconductor device with side-junction and method for fabricating the same

Номер: US20120007258A1
Автор: Bong-Seok Jeon, Jae-Geun Oh, Jin-Ku Lee, Mi-Ri Lee, Seung-Joon Jeon
Принадлежит: Hynix Semiconductor Inc

A method for fabricating a semiconductor device includes forming a plurality of bodies that are each isolated from another by a trench and each include a diffusion barrier region with a sidewall exposed to the trench, forming a doped layer gap-filling the trench, forming a sidewall junction at the exposed sidewall of the diffusion barrier region by annealing the doped layer, and forming a conductive line coupled with the sidewall junction to fill the trench.

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Номер записи: 34
12-01-2012 дата публикации

RESTIVE MEMORY USING SiGe MATERIAL

Номер: US20120008366A1
Автор: Wei Lu
Принадлежит: Crossbar Inc

A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell.

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Номер записи: 35
12-01-2012 дата публикации

Display device, method for manufacturing the same and apparatus for manufacturing the same

Номер: US20120009698A1
Автор: Osamu Nakamura, Yoshitaka Moriya
Принадлежит: Semiconductor Energy Laboratory Co Ltd

The present inventions provides a method for manufacturing a film-type display device efficiently, and a method for manufacturing a large-size film-type display device, and an apparatus for manufacturing the film-type display device. An apparatus for manufacturing a film-type display device includes: transferring means for transferring a substrate over which an integrated circuit constituting the display device is provided; first separating means for separating the integrated circuit from the substrate by adhering a first sheet material to one surface of the integrated circuit; second separating means for separating the integrated circuit from the first sheet material by adhering a second sheet material to the other surface of the integrated circuit; processing means for forming one or both of a conductive film and an insulating film on the integrated circuit; and sealing means for sealing the processed integrated circuit with the second sheet material and a third sheet material.

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Номер записи: 36
19-01-2012 дата публикации

Organic thin-film solar cell and method of producing same

Номер: US20120012183A1
Автор: Koichi Nagamoto, Takeshi Kondo, Yongchun Luo, Yuko Iwamoto
Принадлежит: Lintec Corp

Providing an organic thin-film solar cell that can be easily manufactured and then mass produced at low cost while increasing the photoelectric conversion efficiency, and the method of producing the same. Solar cells 100 - 102 include at least one of a mixed P-type organic semiconductor layer 12 M and a mixed N-type organic semiconductor layer 14 M. A plurality of organic semiconductor materials are mixed in the mixed P-type organic semiconductor layer 12 M or the mixed N-type organic semiconductor layer 14 M, respectively. In such a way, the photoelectric conversion efficiency of the solar cells is increased by selecting and mixing proper organic semiconductor materials to form the organic semiconductor layer.

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Номер записи: 37
19-01-2012 дата публикации

Electrolyte additive of dye-sensitized solar cell and method of making the same

Номер: US20120012775A1
Автор: Chung-Kuang Yang, Sheng-Tung Huang
Принадлежит: NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY

An electrolyte additive is selected from N-alkyl benzimidazole derivatives and is applicable to dye-sensitized solar cells. Accordingly, the electrolyte additive can be added to electrolyte at low concentration, and loss of function due to crystallization after long-term use can be prevented; in addition, short circuit photocurrent density and solar energy-to-electricity conversion efficiency of solar cells incorporating the electrolyte additive can be increased.

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Номер записи: 38
19-01-2012 дата публикации

Semiconductor device

Номер: US20120012837A1
Автор: Kiyoshi Kato, Shuhei Nagatsuka, Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of write cycles. The semiconductor device includes a memory cell including a first transistor, a second transistor, and an insulating layer placed between a source region or a drain region of the first transistor and a channel formation region of the second transistor. The first transistor and the second transistor are provided to at least partly overlap with each other. The insulating layer and a gate insulating layer of the second transistor satisfy the following formula: (t a /t b )×(ε ra /ε rb )<0.1, where t a represents the thickness of the gate insulating layer, t b represents the thickness of the insulating layer, ε ra represents the dielectric constant of the gate insulating layer, and ε rb represents the dielectric constant of the insulating layer.

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Номер записи: 39
19-01-2012 дата публикации

Light emitting device

Номер: US20120012888A1
Автор: Jun Koyama, Munehiro Azami, Shunpei Yamazaki, Tatsuya Arao
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

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Номер записи: 40
19-01-2012 дата публикации

Vertically Fabricated BEOL Non-Volatile Two-Terminal Cross-Trench Memory Array with Two-Terminal Memory Elements and Method of Fabricating the Same

Номер: US20120012897A1
Автор: Paul Besser, Robin Cheung, Wen Zhong Kong
Принадлежит: Unity Semiconductor Corp

A non-Flash non-volatile cross-trench memory array formed using an array of trenches formed back-end-of-the-line (BEOL) over a front-end-of-the-line (FEOL) substrate includes two-terminal memory elements operative to store at least one bit of data that are formed at a cross-point of a first trench and a second trench. The first and second trenches are arranged orthogonally to each other. At least one layer of memory comprises a plurality of the first and second trenches to form a plurality of memory elements. The non-volatile memory can be used to replace or emulate other memory types including but not limited to embedded memory, DRAM, SRAM, ROM, and FLASH. The memory is randomly addressable down to the bit level and erase or block erase operation prior to a write operation are not required.

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Номер записи: 41
19-01-2012 дата публикации

Vertical non-volatile memory device

Номер: US20120012920A1
Автор: Chang-Won Lee, Kyung-tae Jang, Seung-Mok Shin
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A vertical non-volatile memory device includes a semiconductor pattern disposed on a substrate; and a plurality of transistors of first through n-th layers that are stacked on a side of the semiconductor pattern at predetermined distances from each other, wherein the transistors are spaced apart and insulated from one another at the predetermined distances via air gap, where n is a natural number equal to or greater than 2.

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Номер записи: 42
19-01-2012 дата публикации

Semiconductor device and method for fabricating the same

Номер: US20120012926A1
Автор: Chang Jun Yoo, Ga Young Ha
Принадлежит: Hynix Semiconductor Inc

A method for fabricating a semiconductor memory device includes defining an active region having a shape protruding upward by forming a trench in a semiconductor substrate; forming an open region obtained by selectively exposing a lower side portion of the active region while forming a sidewall layer along the shape of the active region; covering the open region with a silicon layer; forming an impurity region in the lower side portion of the active region; forming a barrier metal layer on the silicon layer and the active region; forming a bit line metal layer buried in the entire active region; and forming a buried bit line having the barrier metal layer, the bit line metal layer and a silicide metal layer formed between the silicon layer and the barrier metal layer by etching the bit line metal layer up to a portion at which the impurity region is formed.

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Номер записи: 43
19-01-2012 дата публикации

Semiconductor device and method for fabricating the same

Номер: US20120012944A1
Автор: Jae-Yun YI
Принадлежит: Hynix Semiconductor Inc

A semiconductor device includes a memory block including a transistor region and a memory region. A variable resistance layer of the memory region acts as a gate insulating layer in the transistor region.

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Номер записи: 44
19-01-2012 дата публикации

Magnetic memory

Номер: US20120012955A1
Автор: Hiroyuki Yamamoto, Jun Hayakawa, Katsuya Miura, Kenchi Ito
Принадлежит: HITACHI LTD

Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression M s 2 (t/w)>|J ex |>(2k B TΔ)/S, in which k B is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and M s are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and J ex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.

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Номер записи: 45
19-01-2012 дата публикации

Power generation device

Номер: US20120013219A1
Автор: Chung-Jung Kuo, Min-Tsz Lin, Sheng-Fan HSIEH, Tze-Chern MAO
Принадлежит: Delta Electronics Inc

A power generation device is disclosed, which includes a plurality of thermomagnetic generator and a flow controller. The thermomagnetic generators can acquire first fluids respectively. The flow controller can control flow rates of the second fluids flowing into the thermomagnetic generators respectively, wherein a fluid temperature of the first fluid is different from a fluid temperature of the second fluid.

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Номер записи: 46
19-01-2012 дата публикации

Organic luminescent medium

Номер: US20120013244A1
Автор: Hiroyuki Saito, Masahiro Kawamura, Yuichiro Kawamura, Yumiko Mizuki
Принадлежит: Idemitsu Kosan Co Ltd

An organic luminescent medium including an anthracene derivative represented by the following formula (1) and a compound having at least one electron-attracting group in the molecular structure thereof.

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Номер записи: 47
19-01-2012 дата публикации

Electrostatically regulated atomic scale electroconductivity device

Номер: US20120013324A1
Автор: Gino A. DiLabio, Jason L. Pitters, Paul G. Piva, Robert A. Wolkow
Принадлежит: NATIONAL RESEARCH COUNCIL OF CANADA, University of Alberta

An atomic scale electroconductivity device with electrostatic regulation includes a perturbing species having a localized electronic charge. A sensing species having an electronic conductivity is placed in proximity to the perturbing species at a distance sufficient to induce a change in the electronic conductivity associated with the localized electronic charge. Electronics are provided to measure the conductivity via the sensing species. A temporally controlled atomic scale transistor is provided by biasing a substrate to a substrate voltage with respect to ground.

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Номер записи: 48
19-01-2012 дата публикации

Semiconductor device

Номер: US20120014157A1
Автор: Hiroki Inoue, Kiyoshi Kato, Shuhei Nagatsuka, Takanori Matsuzaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region.

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Номер записи: 49
19-01-2012 дата публикации

Nonvolatile Semiconductor Memory

Номер: US20120014181A1
Автор: Masaaki Mihara, Moriyoshi Nakashima, Natsuo Ajika, Shoji Shukuri
Принадлежит: Genusion Inc

A hot electron (BBHE) is generated close to a drain by tunneling between bands, and it data writing is performed by injecting the hot electron into a charge storage layer. When Vg is a gate voltage, Vsub is a cell well voltage, Vs is a source voltage and Vd is a drain voltage, a relation of Vg>Vsub>Vs>Vd is satisfied, Vg−Vd is a value of a potential difference required for generating a tunnel current between the bands or higher, and Vsub−Vd is substantially equivalent to a barrier potential of the tunnel insulating film or higher.

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Номер записи: 50
19-01-2012 дата публикации

High-k gate dielectric oxide

Номер: US20120015488A1
Автор: Kie Y. Ahn, Leonard Forbes
Принадлежит: Individual

A dielectric such as a gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from elements such as zirconium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

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Номер записи: 51
19-01-2012 дата публикации

Method of manufacturing non-volatile memory device

Номер: US20120015512A1
Автор: Choong-ho Lee, Dong-Uk Choi, Hee-Soo Kang, Suk-kang Sung
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A non-volatile memory device includes field insulating layer patterns on a substrate to define an active region of the substrate, upper portions of the field insulating layer patterns protruding above an upper surface of the substrate, a tunnel insulating layer on the active region, a charge trapping layer on the tunnel insulating layer, a blocking layer on the charge trapping layer, first insulating layers on upper surfaces of the field insulating layer patterns, and a word line structure on the blocking layer and first insulating layers.

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Номер записи: 52
19-01-2012 дата публикации

Phototherapy methods and devices comprising emissive aryl-heteroaryl compounds

Номер: US20120015998A1
Автор: Amane Mochizuki, Brett T. Harding, Jensen Cayas, Keisaku Okada, Sazzadur Rahman Khan, SHENG Li, Shijun Zheng
Принадлежит: Nitto Denko Corp

Disclosed herein are compounds represented by a formula: R 1 —Ar 1 —X—Ar 2 —Ar 3 -Het, wherein R 1 , Ar 1 , X, Ar 2 , Ar 3 , and Het are described herein. Compositions and light-emitting devices related thereto are also disclosed.

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Номер записи: 53
26-01-2012 дата публикации

Method of manufacturing ceramic electronic component, ceramic electronic component, and wiring board

Номер: US20120018205A1
Автор: Koji Sato, Yasuhiro Nishisaka, Yukio Sanada
Принадлежит: Murata Manufacturing Co Ltd

A method of manufacturing a ceramic electronic component prevents variations in characteristics even when the ceramic electronic component is embedded in a wiring board. Ceramic green sheets containing an organic binder having a degree of polymerization in a range from about 1000 to about 1500 are prepared. A first conductive paste layer is formed on a surface of each of the ceramic green sheets. The ceramic green sheets are laminated to form a raw ceramic laminated body. A second conductive paste layer is formed on a surface of the raw ceramic laminated body. The raw ceramic laminated body formed with the second conductive paste layer is fired.

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Номер записи: 54
26-01-2012 дата публикации

Non-Volatile Memory Element And Memory Device Including The Same

Номер: US20120018695A1
Автор: Chang-Bum Lee, Chang-Jung Kim, Dong-Soo Lee, Ji-hyun Hur, Man Chang, Myoung-Jae Lee, Seung-Ryul Lee, Young-Bae Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level.

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Номер записи: 55
26-01-2012 дата публикации

Platinum (ii) tetradentate oncn complexes for organic light-emitting diode applications

Номер: US20120018711A1
Автор: Chi Chung Kwok, Chi Fai Kui, Chi Ming Che
Принадлежит: University of Hong Kong HKU

Described are novel platinum (II) containing organometallic materials. These materials show green to orange emissions with high emission quantum efficiencies. Using the materials as emitting materials; pure green emitting organic light-emitting diodes can be fabricated. Since the novel platinum (II) containing organometallic materials are soluble in common solvents, solution process methods such as spin coating and printing can be used for device fabrication.

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Номер записи: 56
26-01-2012 дата публикации

Organic electroluminescent display

Номер: US20120018712A1
Автор: Atsushi Hamaguchi, Nobutaka Mizuno
Принадлежит: Canon Inc

An organic electroluminescent (EL) display includes a plurality of organic EL devices for red, green, and blue subpixels, each including a first electrode on a light output side, a second electrode opposite the first electrode, and an organic compound layer including a light-emitting layer therebetween. The organic EL devices have a resonator structure between a first reflective surface closer to the first electrode than the organic compound layer and a second reflective surface closer to the second electrode than the organic compound layer. A predetermined white color is displayed by mixing the three colors such that an optical distance of the organic EL devices of each color between an emission position in the light-emitting layer and the second reflective surface is set within ±10% from an optical distance corresponding to an nth-order minimum of a curve of required current density against at least the optical distance.

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Номер записи: 57
26-01-2012 дата публикации

Emissive semi-interpenetrating polymer networks

Номер: US20120018716A1
Автор: Gary Gibson, James A. Brug, Lihua Zhao, Sity Lam, Zhang-Lin Zhou
Принадлежит: Hewlett Packard Development Co LP

An emissive semi-interpenetrating polymer network (E-semi-IPN) includes a semi-interpenetrating polymer network and an emissive material interlaced in the polymer network. The semi-interpenetrating polymer network includes in a crosslinked state one or more of a polymerized organic monomer and a polymerized organic oligomer, polymerized water soluble polymerizable agent, and one or more polymerized polyfunctional cross-linking agents. The E-semi-IPN may be employed as an E-semi-IPN layer ( 16, 36, 56 ) in organic light emitting devices ( 10, 20, 30, 40 ).

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Номер записи: 58
26-01-2012 дата публикации

Organic electronic device, compounds for same, and terminal

Номер: US20120018717A1
Автор: Daehyuk Choi, Daesung Kim, Dongha Kim, Hansung Yu, Hwasoon Jung, Jungcheol Park, Junghwan Park, Kiwon Kim, Soungyun Mun, Wonsam Kim, Yongwook Park
Принадлежит: Duksan Hi Metal Co Ltd

Disclosed are an organic electronic device and a compound thereof, and a terminal.

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Номер записи: 59
26-01-2012 дата публикации

Light-Emitting Device, Lighting Device, and Manufacturing Method of Light-Emitting Device

Номер: US20120018769A1
Автор: Hisao Ikeda, Satoshi Seo
Принадлежит: Semiconductor Energy Laboratory Co Ltd

It is an object to provide a light-emitting device which has high power efficiency and high light-extraction efficiency and emits light uniformly in a plane. It is another object to provide a manufacturing method of the light-emitting device. It is another object to provide a lighting device including the light-emitting device. One embodiment of the present invention provides a light-emitting device which includes: a first electrode provided over a substrate; a layer containing a light-emitting organic compound provided over the first electrode; an island-shaped insulating layer provided over the layer containing the light-emitting organic compound; an island-shaped auxiliary electrode layer provided over the island-shaped insulating layer; and a second electrode having a property of transmitting visible light provided over the layer containing the light-emitting organic compound and the island-shaped auxiliary electrode layer.

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Номер записи: 60
26-01-2012 дата публикации

Oled light source having improved total light emission

Номер: US20120018770A1
Автор: Min-Hao Michael Lu, Peter Y.Y. Ngai
Принадлежит: ABL IP HOLDING LLC

An OLED light source has a reduced area metal cathode such as a fine mesh cathode and a highly conductive electron conduction layer adjacent the cathode that allows for rapid lateral conduction of electrical current beneath the cathode to cause exciton formation over substantially the entire light emitting area of the OLED. By substantially reducing the coverage area of the cathode, cathode-exciton energy transfer (cathode quenching) produced by the presence of a metal cathode can be substantially reduced, and total light output from the OLED increased.

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Номер записи: 61
26-01-2012 дата публикации

Semiconductor device and method for manufacturing same

Номер: US20120018783A1
Автор: Hidenobu Nagashima, Hiroshi Akahori, Kazuaki Iwasawa, Kiyohito Nishihara, Masaki Kondo, Shigeo Kondo, Takashi Ichikawa, Yingkang ZHANG
Принадлежит: Individual

According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a first isolation groove penetrating through a conductive film serving as the gate electrode to reach the semiconductor substrate. The method can include forming a protection film covering a side wall of the first isolation groove including a side face of the gate electrode. The method can include forming a second isolation groove by etching the semiconductor substrate exposed to a bottom surface of the first isolation groove. The method can include oxidizing an inner surface of the second isolation groove provided on each of both sides of the gate electrode to form first insulating films, which are connected to each other under the gate electrode. In addition, the method can include filling an inside of the first isolation groove and an inside of the second isolation groove with a second insulating film.

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Номер записи: 62
26-01-2012 дата публикации

Non-volatile semiconductor memory device with intrinsic charge trapping layer

Номер: US20120018794A1
Автор: Ching-Sung Yang, Hau-yan Lu, Shih-Chen Wang
Принадлежит: eMemory Technology Inc

A non-volatile semiconductor memory device includes a substrate, a first gate formed on a first region of a surface of the substrate, a second gate formed on a second region of the surface of the substrate, a charge storage layer filled between the first gate and the second gate, a first diffusion region formed on a first side of the charge storage layer, and a second diffusion region formed opposite the charge storage layer from the first diffusion region. The first region and the second region are separated by a distance sufficient for forming a self-aligning charge storage layer therebetween.

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Номер записи: 63
26-01-2012 дата публикации

Semiconductor device and method for manufacturing the same

Номер: US20120018799A1
Автор: Hyung Jin Park
Принадлежит: Hynix Semiconductor Inc

A semiconductor device and a method for manufacturing the same are provided. The method includes forming a cell structure where a storage node contact is coupled to a silicon layer formed over a gate, thereby simplifying the manufacturing process of the device. The semiconductor device includes a bit line buried in a semiconductor substrate; a plurality of gates disposed over the semiconductor substrate buried with the bit line; a first plug disposed in a lower portion between the gates and coupled to the bit line; a silicon layer disposed on the upper portion and sidewalls of the gate; and a second plug coupled to the silicon layer disposed over the gate.

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Номер записи: 64
26-01-2012 дата публикации

Method and apparatus for generating electricity by thermally cycling an electrically polarizable material using heat from various sources and a vehicle comprising the apparatus

Номер: US20120019098A1
Автор: Ahmet Erbil, David F. Walbert
Принадлежит: Neothermal Energy Co

A method for converting heat to electric energy is described which involves thermally cycling an electrically polarizable material sandwiched between electrodes. The material is heated using thermal energy obtained from: a combustion reaction; solar energy; a nuclear reaction; ocean water; geothermal energy; or thermal energy recovered from an industrial process. An apparatus is also described which includes an electrically polarizable material sandwiched between electrodes and a heat exchanger for heating the material. The heat source used to heat the material can be: a combustion apparatus; a solar thermal collector; or a component of a furnace exhaust device. Alternatively, the heat exchanger can be a device for extracting thermal energy from the earth, the sun, ocean water, an industrial process, a combustion reaction or a nuclear reaction. A vehicle is also described which comprises an apparatus for converting heat to electrical energy connected to an electric motor.

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Номер записи: 65
26-01-2012 дата публикации

Piezo Actuator in Multi-Layered Construction

Номер: US20120019107A1
Автор: Franz Rinner, Jan-Thorsten Reszat, Markus Laussermayer, Reinhard Gabl
Принадлежит: EPCOS AG

A multilayer piezo actuator is specified, in which piezoelectric layers and electrode layers are arranged to form a stack. Electrical contact is made with the electrode layers via two external electrodes which consist of wires which are woven with one another. The external electrodes are in this case connected over their entire area to the side surfaces of the stack. A method is also specified for fitting an external electrode.

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Номер записи: 66
26-01-2012 дата публикации

Pillar type capacitor of semiconductor device and method for forming the same

Номер: US20120019980A1
Автор: Cheol Hwan Park, Dong Kyun Lee, Ho Jin Cho
Принадлежит: Hynix Semiconductor Inc

An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film.

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Номер записи: 67
26-01-2012 дата публикации

Methods Of Forming An Array Of Memory Cells, Methods Of Forming A Plurality Of Field Effect Transistors, Methods Of Forming Source/Drain Regions And Isolation Trenches, And Methods Of Forming A Series Of Spaced Trenches Into A Substrate

Номер: US20120021573A1
Автор: Neal L. Davis, Ranjan Khurana, Richard Housley
Принадлежит: Micron Technology Inc

A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.

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Номер записи: 68
02-02-2012 дата публикации

Thermoelectric material coated with a protective layer

Номер: US20120024332A1
Автор: Francis Stackpool, Guenther Huber, Ivor Wynn Jones, John Stuart Blackburn, Kerstin Schierle-Arndt, Madalina Andreea STEFAN, Stephen Heavens
Принадлежит: BASF SE

A thermoelectric material in a shape for forming part of a thermoelectric module, the thermoelectric material is coated with a protective layer to prevent degradation by humidity, oxygen, chemicals or thermal stress.

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Номер записи: 69
02-02-2012 дата публикации

Synthesis of nanocomposite thermoelectric material

Номер: US20120025154A1
Автор: Michael Paul Rowe
Принадлежит: Toyota Motor Engineering and Manufacturing North America Inc

A process for forming thermoelectric nanoparticles includes the steps of forming a core material reverse micelle or micelle, adding a bismuth containing compound to the core material reverse micelle or micelle forming a reverse micelle or micelle having the bismuth containing compound dispersed therein, adding a tellurium containing compound with the formed micelle or reverse micelle in the presence of a reducing agent that alloys with the bismuth containing compound forming composite thermoelectric nanoparticles having a core and shell structure, and washing the core and shell nanoparticles in a solvent mixture including ammonium hydroxide, water and methanol wherein the core and shell nanoparticles remain un-agglomerated and have a particle size of from 1-25 nanometers.

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Номер записи: 70
02-02-2012 дата публикации

Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film

Номер: US20120025173A1
Автор: Mari Sasaki, Norihito Kobayashi, Takahiro Ohe
Принадлежит: Sony Corp

A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R 3 and R 9 represents a substituent other than hydrogen.

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Номер записи: 71
02-02-2012 дата публикации

Organic electroluminescent device

Номер: US20120025180A1
Автор: Toshio Matsumoto
Принадлежит: ASON Tech CO Ltd

Provided is a structure of an organic EL element capable of reducing the product cost by drastically simplifying the fabrication process as compared with a conventional multi-photon organic EL element. An insulating organic layer having a low dielectric constant is interposed to smooth the transfer of electron charges between a strong electron-accepting material and an electron transport layer included in a charge generation layer of the conventional multi-photon organic EL element.

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Номер записи: 72
02-02-2012 дата публикации

Light emitting device

Номер: US20120025184A1
Автор: Hideki Yasuda, Masayuki Naya, Wataru Sotoyama
Принадлежит: Fujifilm Corp

In an electroluminescence device, highly efficient light emission is realized without reducing the durability thereof. The electroluminescence device includes electrodes, a plurality of layers deposited between the electrodes, a light emitting region between the plurality of layers, the light emitting region emitting light by application of an electric field between the electrodes. The plurality of layers include a metal thin-film in the vicinity of the light emitting region. The metal thin-film induces plasmon resonance on the surface thereof by the emitted light. Surface modification is provided on at least one of the surfaces of the metal thin-film. The surface modification includes an end group having polarity that makes the work function of the metal thin-film become close to the work function of at least a layer next to the metal thin-film.

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Номер записи: 73
02-02-2012 дата публикации

System with logic and embedded mim capacitor

Номер: US20120025285A1
Автор: Jeong Y. Choi
Принадлежит: Mosys Inc

An embedded memory system includes an array of random access memory (RAM) cells, on the same substrate as an array of logic transistors. Each RAM cell includes an access transistor and a capacitor structure. The capacitor structure is fabricated by forming a metal-insulator-metal capacitor in a dielectric layer. The embedded RAM system includes fewer metal layers in the logic region than in the memory region

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Номер записи: 74
02-02-2012 дата публикации

Semiconductor device and method of manufacturing semiconductor device

Номер: US20120025290A1
Автор: Kazuhiko Takada
Принадлежит: Fujitsu Semiconductor Ltd

A conductive film having a first width in a first direction, an ONO film, and a control gate are formed above a tunnel gate insulating film. With the control gate as a mask, the conductive film is etched to form a floating gate. Then, an inter-layer insulating film is formed. A contact hole whose width in the first direction is larger than the first width is formed in the inter-layer insulating film. Then, sidewall spacer is formed on an inside wall of the contact hole.

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Номер записи: 75
02-02-2012 дата публикации

Organic electroluminescent display device

Номер: US20120025699A1
Автор: Kenji Okumoto, Kouhei KORESAWA, Masafumi Matsui, Takashi Ohta
Принадлежит: Panasonic Corp

An organic EL display device including organic EL light-emitting regions which includes a red-light emitting layer, a green-light emitting layer, and a blue-light emitting layer that are arranged on a main substrate includes: a first light-adjusting layer including a first portion and a second portion, the first portion selectively transmitting desired blue light, and the second portion absorbing visible light other than at least the desired blue light; and a second light-adjusting layer selectively absorbing light with a wavelength between desired red light and desired green light at an entire surface, in which the blue light-emitting layer is overlaid with the first portion, and a bank which is a non-light emitting portion is overlaid with the second portion. The first portion and the second portion may be integrally formed of a same material, and the second portion may absorb an entire range of visible light.

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Номер записи: 76
02-02-2012 дата публикации

Method of operating semiconductor memory device

Номер: US20120026775A1
Автор: Hideaki Aochi, Kaori Kawasaki, Kunihiro Yamada, Masaru Kito, Ryouhei Kirisawa, Tomoko Fujiwara, Yoshiaki Fukuzumi, Yoshimasa Mikajiri
Принадлежит: Toshiba Corp

According to one embodiment, a method of operating a semiconductor memory device is disclosed. The method can include storing read-only data in at least one selected from a memory cell of an uppermost layer and a memory cell of a lowermost layer of a plurality of memory cells connected in series via a channel body. The channel body extends upward from a substrate to intersect a plurality of electrode layers stacked on the substrate. The method can include prohibiting a data erase operation of the read-only memory cell having the read-only data stored in the read-only memory cell.

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Номер записи: 77
02-02-2012 дата публикации

Memory resistor having plural different active materials

Номер: US20120026776A1
Автор: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
Принадлежит: Hewlett Packard Development Co LP

Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.

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Номер записи: 78
02-02-2012 дата публикации

Hybrid photovoltaic cells and related methods

Номер: US20120028406A1
Автор: James Harris, Nigel Pickett
Принадлежит: Nanoco Technologies Ltd

Embodiments of the present invention involve photovoltaic (PV) cells comprising a semiconducting nanorod-nanocrystal-polymer hybrid layer, as well as methods for fabricating the same. In PV cells according to this invention, the nanocrystals may serve both as the light-absorbing material and as the heterojunctions at which excited electron-hole pairs split.

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Номер записи: 79
02-02-2012 дата публикации

Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same

Номер: US20120028410A1
Автор: Eugene P. Marsh
Принадлежит: Micron Technology Inc

A method of forming a material. The method comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD layer cycle comprising a reactive second metal precursor and a co-reactive second metal precursor. An ALD layer cycle of a third metal is conducted, the ALD layer cycle comprising a reactive third metal precursor and a co-reactive third metal precursor. The ALD layer cycles of the first metal, the second metal, and the third metal are repeated to form a material, such as a GeSbTe material, having a desired stoichiometry. Additional methods of forming a material, such as a GeSbTe material, are disclosed, as is a method of forming a semiconductor device structure including a GeSbTe material.

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Номер записи: 80
02-02-2012 дата публикации

Method of manufacturing semiconductor device using acid diffusion

Номер: US20120028434A1
Автор: Hyoung-hee KIM, Hyung-Rae Lee, Kyung-Hwan Yoon, So-Ra Han, Tae-hoi Park, Yool Kang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.

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Номер записи: 81
02-02-2012 дата публикации

Method of manufacturing a semiconductor device

Номер: US20120028471A1
Автор: Hidetami Yaegashi, Kazuo Yabe, Kenichi Oyama
Принадлежит: Tokyo Electron Ltd

A method of manufacturing a semiconductor device includes: forming a thin film on a substrate; forming a resist mask which forms a photoresist mask having an elliptical hole pattern on the thin film; shrinking a hole size of the second pattern by forming an insulating film on a side wall of the second pattern of the photoresist layer; and etching the thin film using the insulating film and the photoresist layer which form the second pattern having the shrinked hole size as a mask.

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Номер записи: 82
09-02-2012 дата публикации

Nanoscale High-Aspect-Ratio Metallic Structure and Method of Manufacturing Same

Номер: US20120031487A1
Автор: Joong-Mok Park, Kai-Ming Ho, Kristen P. Constant, Ping KUANG, Sumit Chaudhary, Wai Leung
Принадлежит: Iowa State University Research Foundation ISURF

Nanoscale high-aspect-ratio metallic structures and methods are presented. Such structures may form transparent electrode to enhance the performance of solar cells and light-emitting diodes. These structures can be used as infrared control filters because they reflect high amounts of infrared radiation. A grating structure of polymeric bars affixed to a transparent substrate is used. The sides of the bars are coated with metal forming nanowires. Electrodes may be configured to couple to a subset of the rails forming interdigitated electrodes. Encapsulation is used to improve transparency and transparency at high angles. The structure may be inverted to facilitate fabrication of a solar cell or other device on the back-side of the structure. Multiple layered electrodes having an active layer sandwiched between two conductive layers may be used. Layered electro-active layers may be used to form a smart window where the structure is encapsulated between glass to modify the incoming light.

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Номер записи: 83
09-02-2012 дата публикации

Light emitting device and display unit

Номер: US20120032115A1
Автор: Masaomi Sasaki, Mikiko Abe, Shigeyuki Harada
Принадлежит: Ricoh Co Ltd

A light emitting device having a substrate and a luminous layer provided overlying the substrate, which includes a semiconductor nanocrystal to which a carbazole derivative is coordination-bonded or attached, the carbazole derivative having aromatic rings of a compound represented by the chemical structure 1 having one to three substitution groups: where Ar 1 and Ar 2 independently represent substituted or non-substituted aryl groups that may share a linkage to form a ring with a benzene ring, heterocyclic groups, and hydrogen atoms and Ar 3 represents a substituted or non-substituted aryl group, the one to three substitution groups represented by the chemical structure 2: —X—Y—Z  Chemical Structure 2 where X represents a methylene group, a carbonyloxy group, an oxycarbonyl group, a carbonyl group, an oxygen atom, and a sulfur atom, Y represents a substituted or non-substituted alkylene group, and Z represents a carboxyl group, a hydroxyl group, and a thiol group.

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Номер записи: 84
09-02-2012 дата публикации

Programmable resistive memory cell with oxide layer

Номер: US20120032131A1
Автор: Insik Jin, Michael Xuefei Tang, Ming Sun, Nurul Amin, Philip George Pitcher, Venkatram Venkatasamy
Принадлежит: SEAGATE TECHNOLOGY LLC

Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

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Номер записи: 85
09-02-2012 дата публикации

Compositions Comprising QD Sol-Gel Composites and Methods for Producing and Using the Same

Номер: US20120032141A1
Автор: Arrelaine Dameron, Ethan Tsai
Принадлежит: HCF Partners LLP

The present invention provides OLEDs comprising cross-linked quantum dots and methods for producing and using the same.

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Номер записи: 86
09-02-2012 дата публикации

Charge transport compositions and electronic devices made with such compositions

Номер: US20120032158A1
Автор: Daniel David Lecloux, YING Wang
Принадлежит: EI Du Pont de Nemours and Co

The present invention is directed to a photoactive device comprising an anode, a cathode, and a photoactive layer, which device further comprises an electron transport and/or anti-quenching layer which minimizes both electron transfer quenching and energy transfer quenching of the photoactive layer.

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Номер записи: 87
09-02-2012 дата публикации

Display device and manufacturing method of display device

Номер: US20120032159A1
Автор: Gen Fujii, Kengo Akimoto, Masaharu Nagai, Masayuki Sakakura, Shunpei Yamazaki, Tetsuji Yamaguchi, Yutaka Matsuda
Принадлежит: Semiconductor Energy Laboratory Co Ltd

It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

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Номер записи: 88
09-02-2012 дата публикации

Optoelectronic Component

Номер: US20120032211A1
Автор: Benjamin Claus Krummacher, Dirk Berben, Florian Schindler, Frank Jermann, Martin Zachau, Norwin von Malm
Принадлежит: OSRAM Opto Semiconductors GmbH

An optoelectronic component comprises an organic layer sequence ( 1 ), which emits an electromagnetic radiation ( 15 ) having a first wavelength spectrum during operation, and also a dielectric layer sequence ( 2 ) and a wavelength conversion region ( 3 ) in the beam path of the electromagnetic radiation ( 15 ) emitted by the organic layer sequence ( 1 ). The wavelength conversion region ( 3 ) is configured to convert at least partially electromagnetic radiation having the first wavelength spectrum into an electromagnetic radiation ( 16 ) having a second wavelength spectrum. The dielectric layer sequence ( 2 ) is arranged in the beam path of the electromagnetic radiation ( 15 ) emitted by the organic layer sequence between the organic layer sequence ( 1 ) and the wavelength conversion region ( 3 ) and is at least partially opaque to an electromagnetic radiation having a third wavelength spectrum, which corresponds to at least one part of the second wavelength spectrum.

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Номер записи: 89
09-02-2012 дата публикации

Organic light emitting diode and method for producing an organic light emitting diode

Номер: US20120032221A1
Автор: Markus Klein, Ralph Paetzold, Wiebke Sarfert
Принадлежит: OSRAM Opto Semiconductors GmbH

An organic light-emitting diode includes an organic light-emitting layer located between a transparent electrode and one other electrode on a substrate. In some embodiments at least one of the transparent electrode and the other electrode has two layers. The two layers include a structured layer, which is a charge carrier injection layer, and a conductive second layer into which the first layer is embedded. In some embodiments the organic light-emitting layer includes a structured charge carrier blocking layer.

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Номер записи: 90
09-02-2012 дата публикации

Method for fabrication of a semiconductor device and structure

Номер: US20120032294A1
Автор: Brian Cronquist, Deepak C. Sekar, Israel Beinglass, Jan Lodewijk de Jong, Zvi Or-Bach
Принадлежит: Monolithic 3D Inc

A semiconductor device comprising: a first single crystal silicon layer comprising first transistors, first alignment mark, and at least one metal layer overlying said first single crystal silicon layer, wherein said at least one metal layer comprises copper or aluminum more than other materials; a second layer overlying said at least one metal layer, said second layer comprising second transistors, second alignment mark, and a through via through said second layer, wherein said through via is a part of a connection path between said first transistors and said second transistors, wherein alignment of said through via is based on said first alignment mark and said second alignment mark and effected by a distance between said first alignment mark and said second alignment mark.

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Номер записи: 91
09-02-2012 дата публикации

Non-volatile memory device and sensing method for forming the same

Номер: US20120033478A1
Автор: Hee Bok Kang
Принадлежит: Hynix Semiconductor Inc

A non-volatile memory device and a method for forming the same are disclosed, which relate to a ferroelectric memory device having non-volatile characteristics. The non-volatile memory device includes a control gate configured to receive a read voltage, an insulation film formed over the control gate, a metal layer formed over the insulation film, configured to include a channel region, and a drain region and source region at both ends of the channel region, a ferroelectric layer formed over the channel region of the metal layer, and a program and read gate formed over the ferroelectric layer. A write operation of data corresponding to a resistance state of the channel region is performed by changing polarity of the ferroelectric layer in response to a voltage applied to the program and read gate, the drain and source regions, and the control gate. A read operation of data is performed by sensing a current value changing with a polarity state of the ferroelectric layer on the condition that the read voltage is input to the control gate and a sensing bias voltage is input to one of the drain region and the source region.

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Номер записи: 92
09-02-2012 дата публикации

Semiconductor device and method for driving semiconductor device

Номер: US20120033486A1
Автор: Hiroki Inoue, Kiyoshi Kato, Shuhei Nagatsuka, Takanori Matsuzaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed.

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Номер записи: 93
09-02-2012 дата публикации

Methods of fabricating semiconductor devices having various isolation regions

Номер: US20120034757A1
Автор: Eunkee Hong, Gil-heyun Choi, Ha-Young YI, Hong-Gun Kim, Jun-Won Lee, Yong-Soon Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench.

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Номер записи: 94
09-02-2012 дата публикации

Nonvolatile Semiconductor Memory Device Having Multi-Layered Oxide/(OXY) Nitride Film as Inter-Electrode Insulating Film and Manufacturing Method Thereof

Номер: US20120034772A1
Автор: Hirokazu Ishida, Masayuki Tanaka, Yoshio Ozawa
Принадлежит: Toshiba Corp

A nonvolatile semiconductor memory device includes a first insulator, first conductor, element isolation insulator, second insulator and second conductor. The first insulator is formed on the main surface of a substrate and the first conductor is formed on the first insulator. The element isolation insulator is filled into at least part of both side surfaces of the first insulator in a gate width direction thereof and both side surfaces of the first conductor in a gate width direction thereof and is so formed that the upper surface thereof will be set with height between those of the upper and bottom surfaces of the first conductor. The second insulator includes a three-layered insulating film formed of a silicon oxide film, a silicon oxynitride film and a silicon oxide film formed on the first conductor and element isolation insulator. The second conductor is formed on the second insulator.

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Номер записи: 95
09-02-2012 дата публикации

Semiconductor device manufacturing method

Номер: US20120034785A1
Автор: Hisataka Hayashi, Tsubasa IMAMURA, Yusuke KASAHARA
Принадлежит: Individual

According to one embodiment, a semiconductor device manufacturing method includes collectively etching layers of a multilayered film including silicon layers and silicon oxide films alternately stacked on a semiconductor substrate. The etching gas of the etching contains at least two types of group-VII elements and one of a group-III element, a group-IV element, a group-V element, and a group-VI element, the energy of ions entering the semiconductor substrate when performing the etching is not less than 100 eV, and an addition ratio of the group-III element, the group-IV element, the group-V element, the group-VI element, and the group-VII element to the group-VII element is 0.5 (inclusive) to 3.0 (inclusive).

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Номер записи: 96
16-02-2012 дата публикации

Illumination system comprising beam shaping element

Номер: US20120037943A1
Автор: Coen Adrianus Verschuren, Ferry Zijp
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

The invention relates to an illumination system ( 10 ) comprising a light emitting device ( 20 ) and a beam shaping element ( 30 ) for generating an angular distribution (φ) of the light emitted from the illumination system. The beam shaping element is configured for recycling at least a part of the light emitted from a light emitting surface ( 26 ) of the light emitting device via reflection back towards the light emitting surface. The illumination system further comprises a diffuser ( 40, 42 ) arranged substantially parallel to the light emitting surface for diffusing at least part of the recycled light. The diffuser is constituted of a translucent diffuser ( 40 ) and/or a diffusely reflective electrode layer ( 42 ) of the light emitting device. Limiting the angular distribution by recycling light, using the beam shaping element for recycling light via reflection, reduces glare when the illumination system is used in general lighting applications. The diffuser avoids that the recycled light is confined between the beam shaping element and the light emitting surface of the light emitting element. The recycling is preferably done via total internal reflection at the beam shaping element. The presence of the diffuser improves the efficiency of the illumination system.

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Номер записи: 97
16-02-2012 дата публикации

Magnetic tunneling junction device and its manufacturing method

Номер: US20120038011A1
Автор: Yoshihisa Iba
Принадлежит: Fujitsu Semiconductor Ltd

A magnetic pinned layer is formed over a substrate. An insulating film is formed over the magnetic pinned layer. A recess is formed in and through the insulating film. A tunneling insulating film is formed over a bottom of the recess. A first magnetic free layer is formed over the bottom of the recess via the tunneling insulating film. A second magnetic free layer is formed over the insulating film and made of a same material as the first magnetic free layer. A non-magnetic film is formed on sidewalls of the recess, extending from the first magnetic free layer to the second magnetic free layer and made of oxide of the material of the first magnetic free layer. An upper electrode is disposed over the first magnetic free layer, non-magnetic film and second magnetic free layer, and electrically connected to the first magnetic free layer and second magnetic free layer.

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Номер записи: 98
16-02-2012 дата публикации

Nonvolatile Memory Devices, Channel Boosting Methods Thereof, Programming Methods Thereof, And Memory Systems Including The Same

Номер: US20120039130A1
Автор: ChiWeon Yoon, Donghyuk Chae, Sang-Wan Nam, Sung-Won Yun
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

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Номер записи: 99
16-02-2012 дата публикации

Gas-barrier multilayer film

Номер: US20120040107A1
Автор: Akira Hasegawa, Masamitsu Ishitobi, Takashi Sanada, Toshihiko Tanaka, Toshiya Kuroda
Принадлежит: Sumitomo Chemical Co Ltd

A gas-barrier multilayer film including: a base member; and at least one thin film layer formed on at least one surface of the base member, wherein at least one layer of the thin film layer(s) satisfies at least one of requirements (A) and (B).

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Номер записи: 100