Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 14766. Отображено 100.
19-01-2012 дата публикации

Black silicon based metal-semiconductor-metal photodetector

Номер: US20120012967A1
Автор: Anyuan Zhang, Guodong Zhao, JING Jiang, Wei Li, Yadong Jiang, Zhengyu Guo, Zhiming Wu
Принадлежит: University of Electronic Science and Technology of China

A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.

Подробнее
Номер записи: 1
02-02-2012 дата публикации

Hybrid photovoltaic cells and related methods

Номер: US20120028406A1
Автор: James Harris, Nigel Pickett
Принадлежит: Nanoco Technologies Ltd

Embodiments of the present invention involve photovoltaic (PV) cells comprising a semiconducting nanorod-nanocrystal-polymer hybrid layer, as well as methods for fabricating the same. In PV cells according to this invention, the nanocrystals may serve both as the light-absorbing material and as the heterojunctions at which excited electron-hole pairs split.

Подробнее
Номер записи: 2
01-03-2012 дата публикации

Solar cell element, and solar cell module including the same

Номер: US20120048336A1
Автор: Naoya Ito
Принадлежит: Kyocera Corp

It is aimed to provide a solar cell element and a solar cell module capable of reducing an output drop in a case where a crack occurs in the solar cell element. In order to achieve this object, the solar cell element includes a substrate body including a photoelectric conversion part, a plurality of first electrodes located at intervals on one main surface of the substrate body, and a crack guiding part located in a region positioned between a pair of adjacent first electrodes among the plurality of first electrodes when the substrate body is viewed or viewed through in plan view from the one main surface side and configured to guide a position of a crack occurring in the substrate body upon application of a load to the substrate body.

Подробнее
Номер записи: 3
15-03-2012 дата публикации

Fabrication Of Solar Cells With Silicon Nano-Particles

Номер: US20120060904A1
Автор: David D. Smith, Taeseok Kim
Принадлежит: SunPower Corp

A solar cell structure includes silicon nano-particle diffusion regions. The diffusion regions may be formed by printing silicon nano-particles over a thin dielectric, such as silicon dioxide. A wetting agent may be formed on the thin dielectric prior to printing of the nano-particles. The nano-particles may be printed by inkjet printing. The nano-particles may be thermally processed in a first phase by heating the nano-particles to thermally drive out organic materials from the nano-particles, and in a second phase by heating the nano-particles to form a continuous nano-particle film over the thin dielectric.

Подробнее
Номер записи: 4
15-03-2012 дата публикации

Nanowires formed by employing solder nanodots

Номер: US20120060905A1
Автор: Devendra K. Sadana, Jae-Woong Nah, Jeehwan Kim, Keith E. Fogel, Kuen-Ting Shiu
Принадлежит: International Business Machines Corp

A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.

Подробнее
Номер записи: 5
22-03-2012 дата публикации

Infrared light detector

Номер: US20120068158A1
Автор: Patrick Nickels, Susumu Komiyama
Принадлежит: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of first electronic regions 10 in a connected status is configured such that an electron energy level of excited sub-bands of each of the plurality of first electron regions 10 in a disconnected status is sufficiently higher than a Fermi level of each of second electronic regions 20 opposed to each of the first electronic regions 10 in a conduction channel 120.

Подробнее
Номер записи: 6
29-03-2012 дата публикации

Alternating Bias Hot Carrier Solar Cells

Номер: US20120073657A1
Автор: Dale A. McNeill, Hussein S. El-Ghoroury, Selim E. Guncer
Принадлежит: Ostendo Technologies Inc

Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

Подробнее
Номер записи: 7
19-04-2012 дата публикации

Photovoltaic cell with buffer zone

Номер: US20120090677A1
Автор: Bernard L. Sater
Принадлежит: MH Solar Co Ltd

Systems and methods that provide a barrier for protection of active layers associated with a vertical multi junction (VMJ) photovoltaic cell. Buffer zone(s) in form of an inactive layer(s) arrangement safe guard the active layers against induced stress or strain resulting from external forces/thermal factors (e.g., welding). The buffer zone can be in form of a rim on a surface of an end layer of a cell unit, to act as a protective boundary for such active layer, and to further partially frame the VMJ cell for ease of handling and transportation.

Подробнее
Номер записи: 8
19-04-2012 дата публикации

Solar Cell and Manufacturing Method Thereof

Номер: US20120090682A1
Автор: Dong Joon Oh, Eun Joo LEE, Hae Seok Lee, Hyun Woo Lee, Ji Myung Shim, Ji Sun Kim, Jun Young Choi, Kyeong Yeon Cho
Принадлежит: SHIN SUNG HOLDINGS CO Ltd

A solar cell and a manufacturing method thereof are provided. The method includes forming a microstructure including a texturing on the surface of a semiconductor substrate of a first conductive type, forming a plurality of nanostructures on the surface of the semiconductor substrate, forming an emitter layer by implanting impurities of a second conductive type opposite to the first conductive type in a front face of the semiconductor substrate, forming an anti-reflective coating (ARC) on the emitter layer, forming a front electrode passing through a portion of the ARC and being coupled to the emitter layer, and forming a back electrode on a rear face of the semiconductor substrate of the first conductive type, the rear face being opposite to the face on which the front electrode is formed. A dominant light-collecting characteristic can be approached by forming nanostructures on a semiconductor substrate of a solar cell.

Подробнее
Номер записи: 9
26-04-2012 дата публикации

Solar cell

Номер: US20120097228A1
Автор: Hirofumi Yoshikawa, Makoto Izumi, Tomohiro Nozawa, Yasutaka Kuzumoto
Принадлежит: Sharp Corp

A solar cell of the present invention comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers comprising quantum dots are stacked alternately and repeatedly, and is formed so that the bandgaps of the quantum dots are gradually widened with increasing distance from a side of the p-type semiconductor layer and decreasing distance to a side of the n-type semiconductor layer.

Подробнее
Номер записи: 10
26-04-2012 дата публикации

Method for preparation of metal chalcogenide solar cells on complexly shaped surfaces

Номер: US20120100660A1
Автор: Bing Liu, Kevin V. Hagedorn, Wei Guo
Принадлежит: IMRA America Inc

Methods for fabricating a photovoltaic device on complexly shaped fabricated objects, such as car bodies are disclosed. Preferably the photovoltaic device includes absorber layers comprising Copper, Indium, Gallium, Selenide (CIGS) or Copper, Zinc, Tin, Sulfide (CZTS). The method includes the following steps: a colloidal suspension of metal surface-charged nanoparticles is formed; electrophoretic deposition is used to deposit the nanopartieles in a metal thin film onto a complexly shaped surface of the substrate; the metal thin film is heated in the presence of a chalcogen source to convert the metal thin film into a metal chalcogenide thin film layer; a buffer layer is formed on the metal chalcogenide thin film layer using a chemical bath deposition; an intrinsic zinc oxide insulating layer is formed adjacent to a side of the buffer layer, opposite the metal chalcogenide thin film layer, by chemical vapor deposition; and finally, a transparent conducting oxide is formed adjacent to a side of the intrinsic zinc oxide, opposite the buffer layer, by chemical vapor deposition.

Подробнее
Номер записи: 11
10-05-2012 дата публикации

Optical Device

Номер: US20120112165A1
Автор: Martin David Brian Charlton, Pavlos Lagoudakis, Soontorn Chanyawadee
Принадлежит: University of Southampton

An improved optoelectronic device is described, which employs optically responsive nanoparticles and utilises a non-radiative energy transfer mechanism. The nanoparticles are disposed on the sidewalls of one or more cavities, which extend from the surface of the device through the electronic structure and penetrate the energy transfer region. The nanoparticles are located in close spatial proximity to an energy transfer region, whereby energy is transferred non-radiatively to or from the electronic structure through non-contact dipole-dipole interaction. According to the mode of operation, the device can absorb light energy received from the device surface via the cavity and then transfer this non-radiatively or can transfer energy non-radiatively and then emit light energy towards the surface of the device via the cavity. As such, the deice finds application in light emitting devices, photovoltaic (solar) cells, displays, photodetectors, lasers and single photon devices.

Подробнее
Номер записи: 12
17-05-2012 дата публикации

Photovoltaic device

Номер: US20120118374A1
Автор: Seung-Yeop Myong
Принадлежит: Individual

Provided is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate: a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises a hydrogenated amorphous silicon based material and a hydrogenated proto-crystalline silicon based material having a crystalline silicon grain, and comprises a non-silicon based element; and a second electrode disposed on the photoelectric transformation layer.

Подробнее
Номер записи: 13
07-06-2012 дата публикации

Thin-film solar battery and method for manufacturing the same

Номер: US20120138146A1
Автор: Keisuke Nakamura, Takeo Furuhata
Принадлежит: Mitsubishi Electric Corp

A thin-film solar battery is constructed such that it includes a translucent insulating substrate, a first transparent conductive film formed of a crystalline transparent conductive film on the translucent insulating substrate, with an uneven structure on a surface thereof, a second transparent conductive film formed of a transparent conductive film on the first transparent conductive film, with an uneven structure on a surface thereof, where the uneven structure is more gentle than the uneven structure of the first transparent conductive film, a power generation layer formed on the second transparent conductive film and having at least one crystalline layer to generate power, and a backside electrode layer formed of a light-reflective conductive film on the power generation layer. A substantially convex hollow portion projecting from the translucent insulating substrate is provided between adjacent convex portions in the uneven structure of the first transparent conductive film.

Подробнее
Номер записи: 14
21-06-2012 дата публикации

Solar cell and method for manufacturing the same

Номер: US20120152338A1
Автор: Jinho Kim, Jungmin Ha, Junyong Ahn
Принадлежит: LG ELECTRONICS INC

A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity region having a second conductivity type, heating the substrate with the first impurity region to activate the first impurity region to form an emitter region, etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part, and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate, which is opposite the first surface of the substrate to connect to the second surface of the substrate.

Подробнее
Номер записи: 15
28-06-2012 дата публикации

Photodetector using a graphene thin film and nanoparticles, and method for producing the same

Номер: US20120161106A1
Автор: Dong-Ick Son, Hee-Yeon Yang, Jae-Hun Jung, Jung-Min Lee, Tae-Whan Kim, Won-Il Park
Принадлежит: Industry University Cooperation Foundation IUCF HYU

Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

Подробнее
Номер записи: 16
28-06-2012 дата публикации

Electrode, photoelectric conversion device using the electrode, and manufacturing method thereof

Номер: US20120161130A1
Автор: Emi Koezuka, Koichiro Tanaka, Sho Kato, Takashi Hirose, Yuji Oda
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.

Подробнее
Номер записи: 17
28-06-2012 дата публикации

Method of Manufacturing a Printable Composition of a Liquid or Gel Suspension of Diodes

Номер: US20120164796A1
Автор: Brad Oraw, Eric Anthony Perozziello, Jeffrey Baldridge, Mark Allan Lewandowski, Mark David Lowenthal, Neil O. Shotton, Richard A. Blanchard, William Johnstone Ray
Принадлежит: NthDegree Technologies Worldwide Inc

An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary method of making a liquid or gel suspension of diodes comprises: adding a viscosity modifier to a plurality of diodes in a first solvent; and mixing the plurality of diodes, the first solvent and the viscosity modifier to form the liquid or gel suspension of the plurality of diodes. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.

Подробнее
Номер записи: 18
12-07-2012 дата публикации

Template for three-dimensional thin-film solar cell manufacturing and methods of use

Номер: US20120174860A1
Автор: Mehrdad Moslehi
Принадлежит: Solexel Inc

A template 100 for three-dimensional thin-film solar cell substrate formation for use in three-dimensional thin-film solar cells. The template 100 comprises a substrate which comprises a plurality of posts 102 and a plurality of trenches 104 between said plurality of posts 102 . The template 100 forms an environment for three-dimensional thin-film solar cell substrate formation.

Подробнее
Номер записи: 19
12-07-2012 дата публикации

Nanograin Material and Photoelectric Conversion Device

Номер: US20120175593A1
Автор: Koji Murayama
Принадлежит: Murata Manufacturing Co Ltd

A quantum dot, which is an ultrafine grain, has a core-shell structure having a core portion and a shell portion protecting the core portion. The surface of the shell portion is covered with two kinds of surfactants, a hole-transporting surfactant and an electron-transporting surfactant, which are concurrently present. Moreover, the hole-transporting surfactant has a HOMO level which tunneling-resonates with the valence band of the quantum dot and the electron-transporting surfactant has a LUMO level which tunneling-resonates with the transfer band of the quantum dot. Thus, a nanograin material which has good carrier transport efficiency and is suitable for use in a photoelectric conversion device is achieved.

Подробнее
Номер записи: 20
19-07-2012 дата публикации

Method of Fabricating Silicon Quantum Dot Layer and Device Manufactured Using the Same

Номер: US20120181503A1
Автор: Czang-Ho Lee, Dong-Jin Kim, Joon-Young Seo
Принадлежит: SAMSUNG ELECTRONICS CO LTD, Samsung SDI Co Ltd

Disclosed are a method of fabricating a silicon quantum dot layer and a device manufactured using the same. A first capping layer is formed on a substrate, and a silicon-containing precursor layer is formed on the first capping layer. A second capping layer is formed on the silicon-containing precursor layer. The first capping layer, the silicon-containing precursor layer, and the second capping layer are irradiated to convert the silicon-containing precursor layer into a stack including a first poly-crystalline silicon layer, a silicon quantum dot layer on the first poly-crystalline silicon layer, and a second poly-crystalline silicon layer on the silicon quantum dot layer.

Подробнее
Номер записи: 21
19-07-2012 дата публикации

Substrate structure for semiconductor device fabrication and method for fabricating the same

Номер: US20120181664A1
Автор: Haizhou Yin, Huilong Zhu, Zhijiong Luo
Принадлежит: Individual

The present invention proposes a strip plate structure and a method of manufacturing the same. In one embodiment, the strip plate structure comprises a strip plate array comprising a plurality of strip plates arranged in a predetermined direction with spacing, each of said strip plates including a first surface facing one side direction of the strip plate structure and a second surface facing an substantially opposite side direction of the strip plate structure; and a plurality of strip sheets, each strip sheet alternately abutting either the first surfaces or the second surfaces of two adjacent strip plates.

Подробнее
Номер записи: 22
02-08-2012 дата публикации

Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof

Номер: US20120192934A1
Автор: Ali Javey, Zhiyong Fan
Принадлежит: UNIVERSITY OF CALIFORNIA

An embodiment of nanostructure includes a conductive substrate; an insulating layer on the conductive substrate, metal nanoparticles, and elongated single crystal nanostructures. The insulating layer includes an array of pore channels. The metal nanoparticles are located at bottoms of the pore channels. The elongated single crystal nanostructures contact the metal nanoparticles and extend out of the pore channels. An embodiment of a photovoltaic device includes the nanostructure and a photoabsorption layer. An embodiment of a method of fabricating a nanostructure includes forming an insulating layer on a conductive substrate. The insulating layer has pore channels arranged in an array. Metal nanoparticles are formed in the pore channels. The metal nanoparticles conductively couple to the conductive layer. Elongated single crystal nanostructures are formed in the pore channels. A portion of the insulating layer is etched away, which leaves the elongated single crystal nanostructures extending out of the insulating layer.

Подробнее
Номер записи: 23
16-08-2012 дата публикации

Correction wedge for leaky solar array

Номер: US20120204956A1
Автор: John T. Apostolos, Judy Feng, William Mouyos
Принадлежит: AMI Research and Development LLC

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

Подробнее
Номер записи: 24
16-08-2012 дата публикации

Orthogonal scattering features for solar array

Номер: US20120206807A1
Автор: John T. Apostolos, Judy Feng, William Mouyos
Принадлежит: AMI Research and Development LLC

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

Подробнее
Номер записи: 25
20-09-2012 дата публикации

Photodetector capable of detecting the visible light spectrum

Номер: US20120235028A1
Автор: Doyeol Ahn
Принадлежит: Industry Cooperation Foundation of University of Seoul

Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Подробнее
Номер записи: 26
27-09-2012 дата публикации

Gain-clamped semiconductor optical amplifiers

Номер: US20120243075A1
Автор: M. Saif Islam, Nobuhiko Kobayashi, Philip J. Kuekes, Shih-Yuan Wang
Принадлежит: Individual

A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

Подробнее
Номер записи: 27
01-11-2012 дата публикации

Flexible lateral pin diodes and three-dimensional arrays and imaging devices made therefrom

Номер: US20120273913A1
Автор: Hao-Chih Yuan, Max G. Lagally, Zhenqiang Ma
Принадлежит: WISCONSIN ALUMNI RESEARCH FOUNDATION

Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.

Подробнее
Номер записи: 28
08-11-2012 дата публикации

Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom

Номер: US20120280226A1
Автор: Edward Hartley Sargent, Hui Tian, Igor Constantin Ivanov
Принадлежит: Individual

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

Подробнее
Номер записи: 29
08-11-2012 дата публикации

Image pickup device

Номер: US20120280295A1
Автор: Masanori Ogura, Seiichiro Sakai, Toru Koizumi
Принадлежит: Canon Inc

An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

Подробнее
Номер записи: 30
08-11-2012 дата публикации

Waveguide photo-detector

Номер: US20120280347A1
Автор: Dongwoo Suh, Gyungock Kim, JiHo JOO, Sanghoon Kim
Принадлежит: Electronics and Telecommunications Research Institute ETRI

Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Подробнее
Номер записи: 31
08-11-2012 дата публикации

Diode-Based Devices and Methods for Making the Same

Номер: US20120282718A1
Автор: Anthony J. Lochtefeld
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

Подробнее
Номер записи: 32
22-11-2012 дата публикации

High efficiency nanostructured photvoltaic device manufacturing

Номер: US20120291862A1
Автор: Rizgar Jiawook
Принадлежит: EUROPEAN NANO INVEST AB

Photovoltaic and Light emitted diode devices comprise of epitaxial wafer of plurality of layers has been proposed. Quantum Dots are deposited onto the micro-nanostructure layer from the light incident direction to increasing light transmission to the active layer. Quantum dots deposited between the light source and the active layer, on the micro-nanostructure layer, to improve light excitation, since it can absorb wavelengths, which are not absorbed by the active layer, and the size and composition of quantum dots can determine its bandgap. A micro-nanostructured layer at the bottom of the PV wafer, which is produced by Molecular Beam Epitaxy (MBE), increases the internal light reflections in the active layer, which increases the efficiency of light absorption and that leads to a photocurrent enhancement.

Подробнее
Номер записи: 33
06-12-2012 дата публикации

High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductor absorbers

Номер: US20120305063A1
Автор: Anthony Calcaterra, David Xuan-Qi Wang, Emmanuel Van Kerschaver, Karl-Josef Kramer, Mehrdad M. Moslehi, Pawan Kapur, Sean M. Seutter, Virenda V. Rana
Принадлежит: Solexel Inc

Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Подробнее
Номер записи: 34
20-12-2012 дата публикации

Apparatuses for generating electrical energy

Номер: US20120319218A1
Автор: Seung-Nam Cha, Young-Jun Park
Принадлежит: Individual

Electrical energy generation apparatuses, in which a solar battery device and a piezoelectric device are combined in a single body by using a plurality of nano wires formed of a semiconductor material having piezoelectric properties.

Подробнее
Номер записи: 35
10-01-2013 дата публикации

Method for fabricating silicon nanowire arrays

Номер: US20130012022A1
Автор: Kai-Chung Wu, San-Liang Lee, Yung-jr Hung
Принадлежит: National Taiwan University of Science and Technology NTUST

A method for larger-area fabrication of uniform silicon nanowire arrays is disclosed. The method includes forming a metal layer with a predetermined thickness on a substrate whose surface has a silicon material by a coating process, the metal layer selected from the group consisting of Ag, Au and Pt; and performing a metal-induced chemical etching for the silicon material by using an etching solution. Accordingly, a drawback that Ag nanoparticles are utilized to perform the metal-induced chemical etching in prior art is solved.

Подробнее
Номер записи: 36
24-01-2013 дата публикации

Secondary Treatment of Films of Colloidal Quantum Dots for Optoelectronics and Devices Produced Thereby

Номер: US20130019930A1
Автор: Hsiang-Yu Chen, Joseph M. Luther, Matthew C. Beard, Octavi Escala Semonin
Принадлежит: Alliance for Sustainable Energy LLC

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Подробнее
Номер записи: 37
24-01-2013 дата публикации

Hybrid silicon evanescent photodetectors

Номер: US20130020556A1
Автор: John E. Bowers
Принадлежит: UNIVERSITY OF CALIFORNIA

Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

Подробнее
Номер записи: 38
14-02-2013 дата публикации

Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies

Номер: US20130037755A1
Автор: Stanford R. Ovshinsky
Принадлежит: Stanford R. Ovshinsky

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon.

Подробнее
Номер записи: 39
28-03-2013 дата публикации

Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof

Номер: US20130075694A1
Автор: Asaf ALBO, Dan Fekete, Gad Bahir
Принадлежит: Technion Research and Development Foundation Ltd

Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.

Подробнее
Номер записи: 40
04-04-2013 дата публикации

Photoelectric conversion element and method of producing the same

Номер: US20130081683A1
Автор: Akira Fujimoto, Eishi TSUTSUMI, Hideyuki Nishizawa, Koji Asakawa, Kumi Masunaga, Ryota Kitagawa, Tsutomu Nakanishi
Принадлежит: Individual

The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.

Подробнее
Номер записи: 41
18-04-2013 дата публикации

LIGHT AND CARRIER COLLECTION MANAGEMENT PHOTOVOLTAIC STRUCTURES

Номер: US20130092210A1
Автор: Fonash Stephen J., Nam Wook Jun
Принадлежит: SOLARITY, INC.

A photovoltaic device is provided that includes a periodic array having a unit cell with a first electrode protrusion of a height H, characteristic width W, and period L. An absorber of nominal thickness T has a volume with a first component between the electrode element protrusions and a second component completely covering the electrode protrusions, H, W, and L for a given T allow carrier collection from the majority of points within the volume and simultaneously to enhance the photon density distribution within the absorber resulting from path length, photonic and plasmonic effects produced by the topology and morphology created by the electrode shapes and the volume distribution between the first and the second components. 1. A photovoltaic device comprising:a periodic array having a unit cell with a first electrode protrusion having a height H, characteristic width W, and period L;an absorber of nominal thickness T wherein said absorber has a volume with a first component between the electrode protrusion and a second component completely covering said electrode element protrusions, wherein H, W, and L for a given T allow carrier collection from a majority of points within the volume and simultaneously to enhance the photon density distribution within the absorber resulting from path length, photonic and plasmonic effects produced by the topology and morphology created by said first electrode and a volume distribution between the first and the second components.2. A photovoltaic device comprising:a first electrode with protrusions having repeating spacing L arranged in a square or hexagonal lattice and having a height H; an absorber having a nominal thickness3. A photovoltaic cell comprising:a first electrode have nano-element protrusions with repeating spacing L positioned in an array, said nano-elements having a light absorber material disposed between the elements, on the element sides, and over the elements, said absorbing material optionally having, or ...

Подробнее
Номер записи: 42
18-04-2013 дата публикации

ORGANIC THIN-FILM SOLAR CELL AND PRODUCTION METHOD FOR THE SAME

Номер: US20130092238A1
Автор: Kaida Yuriko, OGATA Yuichiro, Tahara Shinya
Принадлежит: Asahi Glass Company, Limited

There are provided an organic thin-film solar cell having high charge transport efficiency and increased photoelectric conversion efficiency, and a method for producing the organic thin-film solar cell. An organic thin-film solar cell including in series a transparent substrate a cathode a photoelectric conversion layer having a regular phase-separated structure composed of an electron donor layer and an electron acceptor layer at least one of the electron acceptor layer and the electron donor layer having a liquid crystalline organic material containing oriented liquid crystalline molecules, an anode and a substrate 1. An organic thin-film solar cell , comprising in series:a transparent substrate;a cathode;a photoelectric conversion layer having a regular phase-separated structure composed of an electron donor layer and an electron acceptor layer, at least one of the electron acceptor layer and the electron donor layer having a liquid crystalline organic material containing oriented liquid crystalline molecules;an anode; anda substrate.2. The organic thin-film solar cell according to claim 1 ,Wherein each of the electron acceptor layer and the electron donor layer has cross-section of a comb-teeth shape with a plurality of teeth facing the cathode or the anode, and the teeth fit with each other to form the phase-separated structure.3. The organic thin-film solar cell according to claim 1 ,wherein at least one of the electron acceptor layer and the electron donor layer is formed by using a nano-imprint method.4. The organic thin-film solar cell according to claims 1 ,wherein the electron acceptor layer and the electron donor layer are separately and alternately formed between the cathode and the anode in a direction perpendicular thereto.5. The organic thin-film solar cell according to claims 2 ,wherein each of the teeth has width from 5 to 1000 nm.6. The organic thin-film solar cell according to claims 1 ,wherein the electron donor layer has a thickness from a ...

Подробнее
Номер записи: 43
18-04-2013 дата публикации

Methods of Fabricating Optoelectronic Devices Using Semiconductor-Particle Monolayers and Devices Made Thereby

Номер: US20130092975A1
Автор: Ajaykumar R. Jain
Принадлежит: VERSATILIS LLC

Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.

Подробнее
Номер записи: 44
25-04-2013 дата публикации

PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR

Номер: US20130099203A1
Автор: Akita Katsushi, Fujii Kei, Iguchi Yasuhiro, Inada Hiroshi, Ishizuka Takashi, Nagai Youichi, Nakahata Hideaki
Принадлежит: Sumitomo Electric Industries, Ltd.

A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6. 1. A photodetector which includes , on a group III-V semiconductor substrate , an absorption layer of a type II multiple quantum well (MQW) structure comprising a repeated structure of a first compound semiconductor and a second compound semiconductor , and has sensitivity in a near-infrared region including wavelengths of 1.3 μm and 2.0 μm , whereina ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.2. The photodetector according to claim 1 , having a structure in which incident light enters the photodetector from the substrate side.3. The photodetector according to claim 1 , wherein a total thickness of the MQW structure is not smaller than 0.5 μm but not larger than 3.5 μm.4. The photodetector according to claim 1 , wherein a thickness of the first compound semiconductor and a thickness of the second compound semiconductor are both not smaller than 0.75 nm but not larger than 5 nm.5. The photodetector according to claim 1 , wherein the substrate comprises InP claim 1 , and the MQW structure comprises a repeated structure of InGaAs (0.38≦x≦0.68) and GaAsSb(0.36≦y≦0.62).6. The photodetector according to claim 5 , wherein an InP window layer is provided at a front surface of InP-based epitaxial layers including the MQW ...

Подробнее
Номер записи: 45
25-04-2013 дата публикации

LATERAL COLLECTION PHOTOVOLTAICS

Номер: US20130099342A1
Автор: Fonash Stephen J., Handong Li, Stone David
Принадлежит:

A nanostructured or microstructured array of elements on a conductor layer together form a device electrode of a photovoltaic or detector structure. The array on the conductor layer has a high surface area to volume ratio configuration defining a void matrix between elements. An active layer or active layer precursors is disposed into the void matrix as a liquid to form a thickness coverage giving an interface on which a counter-electrode is positioned parallel to the conduction layer or as a vapor to form a conformal thickness coverage of the array and conduction layer. The thickness coverage is controlled to enhance collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to the device electrode or a device counter-electrode as well as light absorption in said active layer via reflection and light trapping of said device electrode. 2. The device of claim 1 , wherein said thickness coverage is sufficient above said device electrode to allow collection of electrons and holes arising from photogeneration to one of said device electrode or a device counter-electrode claim 1 , as charge appropriate claim 1 , from any location within said active layer.3. The device of claim 1 , wherein the thickness coverage is sufficient above said device electrode to allow collection of photogenerated excitons to one of said device electrode or a device counter-electrode from any location within said active layer.4. The device of wherein the height claim 1 , the width claim 1 , the spacing claim 1 , the active layer thickness coverage claim 1 , and the nano-element and conduction layer composition are sufficient to concurrently enhance:collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to said device electrode or a device counter-electrode, as appropriate; andlight absorption in said active layer via reflection and light trapping of said device ...

Подробнее
Номер записи: 46
02-05-2013 дата публикации

Photoactive Component Comprising Organic Layers

Номер: US20130104968A1
Автор: Maennig Bert, Pfeiffer Martin, Uhrich Christian
Принадлежит: HELIATEK GMBH

A photoactive component includes organic layers, including a single, tandem or multiple cell with two electrodes and, between the electrodes, a photoactive acceptor-donor layer system that includes at least three absorber materials. At least two absorber materials are donors or acceptors. One of the two absorber materials is configured as donors or acceptors absorbing at greater wavelengths than the other absorber material and one of the two absorber materials have a lower Stokes shift and/or a lower absorption width than the other absorber material. 111-. (canceled)12. A photoactive component comprising organic layers , comprising a single , tandem or multiple cell , the photoactive component comprising:first and second electrodes;a photoactive acceptor-donor layer system between the electrodes, the photoactive acceptor-donor layer system comprising first, second and third absorber materials;wherein the first absorber material and the second absorber material are donors and the third absorber material is an acceptor or wherein the first absorber material and the second absorber material are acceptors and the third absorber material is a donor;wherein the second absorber material absorbs at greater wavelength than the first absorber material; andwherein the second absorber material has a smaller Stokes shift and/or a smaller absorption width than the first absorber material.13. The photoactive component according to claim 12 , wherein at least two absorber materials of the photoactive acceptor-donor layer system are present at least partly in a mixed layer.14. The photoactive component according to claim 12 , wherein the absorption range of at least one of the absorber materials extends into the infrared range in the wavelength range from 700 nm to 1500 nm.15. The photoactive component according to claim 12 , further comprising a first transport layer between the first electrode and the photoactive acceptor-donor layer system and a second transport layer between the ...

Подробнее
Номер записи: 47
09-05-2013 дата публикации

PHOTOVOLTAIC CELL

Номер: US20130112254A1
Автор: Lorenzetti Cesare, VITALE MARCELLO
Принадлежит: BASF SE

A photovoltaic cell of high efficiency may be obtained using metallic nanoparticles or nanostructures as the main light absorbing element in the photosensitive layer of the cell, which absorb the light through a surface plasmon or polaron mechanism. The cell comprises at least one photosensitive layer containing nanoparticles or nanostructures each between a n-doped and a p-doped charge transport layer, characterized in that 1. A photovoltaic cell comprising at least one photosensitive layer containing nanoparticles or nanostructures and additionally comprising at least one n-doped charge transport layer and at least one p-doped charge transport layer per each photosensitive layer placed on each side of said photosensitive layer , characterized in that the nanoparticles or nanostructures are the main light absorbing element in the photosensitive layer ,the nanoparticles or nanostructures show metallic conductivity and absorb near infrared, visible and/or ultraviolet light through a surface plasmon or polaron mechanism,the nanoparticles or nanostructures have at least one of their dimensions of size between 0.1 and 500 nm,at least 50% by weight of said nanoparticles or nanostructures from all layers are contained in said photosensitive layer and{'sub': 2', '2', '2, 'where the p-doped charge transport layers comprise a material selected from p-type amorphous silicon, amorphous silicon carbide, microcrystalline silicon, microcrystalline silicon carbide, carbon-containing microcrystalline silicon, a multilayer film of amorphous silicon carbides having different carbon contents and a multilayer film of amorphous silicon and amorphous carbon; and/or the n-doped charge transport layers comprise a material selected from n-type microcrystalline silicon, crystalline silicon, carbon-containing microcrystalline silicon, microcrystalline silicon carbide, amorphous silicon, amorphous silicon carbide and amorphous silicon germanium; or one or both charge transport layers consist ...

Подробнее
Номер записи: 48
09-05-2013 дата публикации

Layer-by-layer nanoassembled nanoparticles based thin films for solar cell and other applications

Номер: US20130112263A1
Автор: Khodadad Varahramyan, Mangilal Agarwal, Sudhir Shrestha
Принадлежит: Indiana University Research And Technology Corp

A solar cell. The solar cell includes a substrate, a first layer comprising a first copper-based material deposited upon the substrate, the first copper-based material electrically attracted to the substrate or to a first optional deposit layer deposited between the substrate and the first layer, and a second layer comprising a second copper-based material deposited upon the first layer or an second optional deposit layer deposited between the first layer and the second layer, the second copper-based material electrically attracted to the first layer or to the second optional deposit layer, wherein the first copper-based material and the second copper-based material are selected from the group consisting of copper indium gallium (di)selenide (CIGS), copper indium selenium (CIS), and cadmium sulfate (CdS).

Подробнее
Номер записи: 49
09-05-2013 дата публикации

Method of manufacturing p-type zno nanowires and method of manufacturing energy conversion device

Номер: US20130112969A1
Автор: Hyun-Jin Kim, Jin-Pyo Hong, Jun-Seok Lee, Sang-Hyo Lee, Young-Jun Park
Принадлежит: Industry University Cooperation Foundation IUCF HYU, SAMSUNG ELECTRONICS CO LTD

A method of manufacturing silver (Ag)-doped zinc oxide (ZnO) nanowires and a method of manufacturing an energy conversion device are provided. In the method of manufacturing Ag-doped ZnO nanowires, the Ag-doped nanowires are grown by a low temperature hydrothermal synthesis method using a Ag-containing aqueous solution.

Подробнее
Номер записи: 50
23-05-2013 дата публикации

Solar cell and manufacturing method thereof

Номер: US20130125964A1
Автор: Chan-Bin Mo, Cho-Young Lee, Dong-seop Kim, Doo-Youl Lee, Min-Seok Oh, Min-Sung Kim, Nam-Kyu Song, Sung-Chan Park, Young-Jin Kim, Young-Sang Park, Young-Su Kim, Yun-Seok Lee
Принадлежит: Samsung SDI Co Ltd

A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode.

Подробнее
Номер записи: 51
23-05-2013 дата публикации

NANOPILLAR TUNNELING PHOTOVOLTAIC CELL

Номер: US20130125965A1
Автор: Hazeghi Arash, Smith Patrick M.
Принадлежит: Quswami, Inc.

The present disclosure relates to a nanopillar tunneling photovoltaic (“NPTPV”), and method for fabricating it. The NPTPV device has a regular array of semiconductor pillar cores formed on a substrate having a conductive surface. Layers of high-k material are formed on the cores to provide an efficient tunneling layer for electrons (or holes) generated by incident photons in the cores. Transparent conductive collector layers are formed on the tunneling layer to collect the tunneled carriers. An optimized deposition process, various surface preparations, an interfacial layer between the pillars and the high-k tunnel layer, and optimized pre- and post-deposition annealing reduce the interface trap density and thus reduce recombination prior to tunneling. The absence of a junction also reduces core recombination, resulting in a high short-circuit current. Modifying the collector material and core doping tunes the open-circuit voltage. Such NPTPVs result in large-scale low-cost PVs. 1. A photovoltaic device , comprising:a first electrode;a second electrode; and a pillar core formed of a semiconductor material and having a base, a top, a side, and a central axis, wherein the pillar core is electrically connected to the first electrode at the base;', 'a tunneling layer formed of a high-k dielectric material on the top and the side of the pillar core; and', 'a collector layer formed of a conducting material on the tunneling layer and electrically connected to the second electrode., 'a plurality of pillars formed on the first electrode layer, each pillar comprising2. The tunneling photovoltaic of claim 1 , wherein each pillar further comprises an interfacial layer between the pillar core and the tunneling layer.3. The tunneling photovoltaic of claim 1 , wherein each pillar further comprises a capping layer formed on the collector layer.4. The tunneling photovoltaic of claim 1 , further comprising;a flexible substrate underpinning the second electrode; anda flexible filler ...

Подробнее
Номер записи: 52
23-05-2013 дата публикации

SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS

Номер: US20130126952A1
Автор: MIYATA Satoe
Принадлежит: SONY CORPORATION

A solid-state imaging device includes: a semiconductor substrate; and a plurality of pixels arrayed two-dimensionally in the semiconductor substrate, each of the pixels having a photoelectric conversion element that performs photoelectric conversion, the photoelectric conversion element having a first impurity region, formed in the semiconductor substrate, containing an impurity of a first conductivity type; a second impurity region formed in the semiconductor substrate so as to be in contact with the first impurity region, containing an impurity of a second conductivity type different from the first conductivity type; and a PN junction portion in which the first impurity region and the second impurity region are in contact with each other, formed in a protruding shape projecting toward a surface side of the semiconductor substrate. 1. A solid-state imaging device comprising:a semiconductor substrate; anda plurality of pixels arrayed two-dimensionally in the semiconductor substrate,each of the pixels having a photoelectric conversion element that performs photoelectric conversion,the photoelectric conversion element havinga first impurity region, formed in the semiconductor substrate, containing an impurity of a first conductivity type;a second impurity region formed in the semiconductor substrate so as to be in contact with the first impurity region, containing an impurity of a second conductivity type different from the first conductivity type; anda PN junction portion in which the first impurity region and the second impurity region are in contact with each other, formed in a protruding shape projecting toward a surface side of the semiconductor substrate, and further wherein the protruding shape is substantially conical.24.-. (canceled)5. The solid-state imaging device as set forth in claim 1 , wherein the first impurity region includes a low-concentration impurity region having a relatively low impurity concentration and a high-concentration impurity region ...

Подробнее
Номер записи: 53
06-06-2013 дата публикации

Solar cell and method of manufacturing the same

Номер: US20130143349A1
Автор: Chang Sil Yang, Jae Ho Kim, Jin Hong
Принадлежит: Jusung Engineering Co Ltd

In one embodiment, a method of manufacturing a solar cell includes forming a first electrode over a substrate; forming a light-converting layer over the first electrode and patterning the light-converting layer to form a plurality of patterned light-converting layers that are spaced apart from each other; forming a transparent insulating layer over the first electrode including the patterned light-converting layers; and forming a second electrode over the transparent insulating layer.

Подробнее
Номер записи: 54
13-06-2013 дата публикации

LIGHT DETECTOR AND METHOD FOR PRODUCING LIGHT DETECTOR

Номер: US20130146844A1
Автор: KIBE Michiya, KOYAMA Masatoshi, MATSUKURA Yusuke, NISHINO Hironori, SAITO Tetsuo, SUGIZAKI Goro, Suzuki Ryo, UCHIYAMA Yasuhito
Принадлежит:

A first electrode layer is disposed on a substrate and a first active layer is disposed thereon. The first active layer includes a first barrier layer and a plurality of first quantum dots that are distributed in the first barrier layer and have a band gap narrower than that of the first barrier layer. A second electrode layer is disposed on the first active layer. On the second active layer, a second active layer is disposed. The second active layer includes a second barrier layer and a plurality of second quantum dots that are distributed in the second barrier layer and have a band gap narrower than that of the second barrier layer. A third electrode layer is disposed on the second active layer. The first quantum dots are larger than the second quantum dots. 1. A light detector comprising:a first electrode layer disposed on a substrate;a first active layer that is disposed on the first electrode layer, and that includes a first barrier layer and a plurality of first quantum dots that are distributed in the first barrier layer and have a band gap narrower than that of the first barrier layer;a second electrode layer disposed on the first active layer;a second active layer that is disposed on the second electrode layer, and that includes a second barrier layer and a plurality of second quantum dots that are distributed in the second barrier layer and have a band gap narrower than that of the second barrier layer; anda third electrode layer disposed on the second active layer,wherein the first quantum dots are larger than the second quantum dots.2. The light detector according to claim 1 , wherein the average of the areas of images made by vertically projecting the first quantum dots to a virtual plane parallel to the substrate surface is twice or more of the average of the areas of images made by vertically projecting the second quantum dots.33132123. The light detector according to claim 1 , wherein the relations S≦0.1×S and S≦0.1×S hold claim 1 , where S is the ...

Подробнее
Номер записи: 55
13-06-2013 дата публикации

Light Emitting, Photovoltaic Or Other Electronic Apparatus and System

Номер: US20130146905A1
Автор: Blanchard Richard A., Frazier Donald Odell, Fuller Kirk A., Lewandowski Mark Allan, Lowenthal Mark D., Ray William Johnstone, Shotton Neil O.
Принадлежит:

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. 1. An apparatus , comprising:a base;at least one first conductor coupled to the base;a plurality of substantially spherical diodes coupled to the at least one first conductor, wherein about fifteen percent to fifty-five percent of a surface of each diode of substantially all of the plurality of substantially spherical diodes has a penetration layer or region having a first majority carrier or dopant and the remaining diode substrate has a second majority carrier or dopant; andat least one second conductor coupled to the plurality of substantially spherical diodes.2. The apparatus of claim 1 , further comprising:a lens structure optically coupled to the plurality of substantially spherical diodes.3. The apparatus of claim 1 , further comprising:a plurality of lenses suspended in a first polymer and coupled to the plurality of substantially spherical diodes.4. The apparatus of claim 3 , wherein the plurality of lenses are substantially ...

Подробнее
Номер записи: 56
13-06-2013 дата публикации

Photoelectric conversion element and method for manufacturing same

Номер: US20130149809A1
Автор: Makoto Takatoku, Ryoichi Ito, Tsutomu Tanaka, Yasuhiro Yamada
Принадлежит: Sony Corp

A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.

Подробнее
Номер записи: 57
20-06-2013 дата публикации

Hybrid Photovoltaic Cells and Related Methods

Номер: US20130153012A1
Автор: Harris James, Pickett Nigel
Принадлежит: NANOCO TECHNOLOGIES, LTD.

Embodiments of the present invention involve photovoltaic (PV) cells comprising a semiconducting nanorod-nanocrystal-polymer hybrid layer, as well as methods for fabricating the same. In PV cells according to this invention, the nanocrystals may serve both as the light-absorbing material and as the heterojunctions at which excited electron-hole pairs split. 1. A photovoltaic cell comprising: 'a. b. a plurality of semiconducting nanorods disposed between the electrodes, wherein the nanorods are electrically connected to the first electrode and electrically insulated from the second;', 'a. first and second electrodes;'}c. a plurality of photoresponsive nanocrystals bound to the nanorods via a bifunctional capping agent; andd. a semiconductor polymer bound to the nanocrystals and bound the second electrode but not bound to the nanorods.2. The cell of wherein (i) the polymer is a hole-transfer polymer claim 1 , (ii) the first charge carrier is electrons claim 1 , and (iii) the second charge carrier is holes.3. The cell of wherein the polymer is poly(3-hexylthiophene) claim 2 , polyphenylenevinylene or a derivative thereof claim 2 , or polyfluorene or a derivative thereof.4. The cell of wherein the nanorods are wide-bandgap semiconductors.5. The cell of wherein the nanorods comprise at least one of ZnO claim 4 , SnO claim 4 , and/or TiO.6. The cell of wherein the nanorods are single-crystal nanorods.7. The cell of wherein the nanorods have an aspect ratio of at least 3.8. The cell of wherein the capping agent is mercaptoacetic acid.9. The cell of wherein absorption of light by a nanocrystal results in production of an exciton claim 1 , the nanocrystal having a largest spatial dimension no greater than an average diffusion distance of the exciton.10. The cell of wherein the nanocrystals comprise at least one of CuInSe claim 1 , CuInS claim 1 , CuInGaSe claim 1 , GaAs claim 1 , InAs claim 1 , InP claim 1 , PbS claim 1 , PbSe claim 1 , PbTe claim 1 , GaSb claim 1 , InSb ...

Подробнее
Номер записи: 58
20-06-2013 дата публикации

SUBSTRATE FOR SOLAR CELL, AND SOLAR CELL

Номер: US20130153026A1
Автор: Hara Kazuo, Ooiwa Hideo, Otsuka Hiroyuki, Watabe Takenori
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

Provided is a substrate for a solar cell, wherein a flat chamfered portion is formed on one corner of a silicon substrate having a square shape in a planar view, or a notch is formed on the corner or close to the corner. This invention makes it possible to easily check the position of the substrate and determine the direction of the substrate in a solar cell manufacturing step, and suppresses failures generated due to the direction of the substrate. 1. A solar cell-forming silicon substrate of square shape with corners as viewed in plan view , which is provided with a chamfer at one corner or a notch at or near one corner.2. A solar cell-forming silicon substrate of square shape as viewed in plan view , having a first corner and a second corner not diagonal to the first corner , which is provided with a chamfer at the first corner or a notch at or near the first corner and with a notch at or near the second corner or a chamfer at the second corner , the notch or chamfer at the second corner is selected to be different from the chamfer or notch at the first corner.3. A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view , which is provided with an orientation flat at one corner or a notch at or near one corner.4100110. A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view , having a surface in () plane , which substrate is provided with an orientation flat or notch in a crystal orientation <> passing substantially the center of the substrate.5. A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view , which is provided with an orientation flat at one corner and a notch at or near another corner not diagonal to the one corner.6. A solar cell comprising the substrate of claim 1 , wherein a low-concentration diffusion layer is formed on the light-receiving surface of the substrate claim 1 , ...

Подробнее
Номер записи: 59
20-06-2013 дата публикации

AVALANCHE PHOTODIODE

Номер: US20130154045A1
Автор: Ando Seigo, Ishibashi Tadao, Muramoto Yoshifumi, Nada Masahiro, Yokoyama Haruki
Принадлежит:

An APD is provided with a semi-insulating substrate, a first mesa having a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate, a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa, and in the APD, a total donor concentration of the n-type electric field control layer is lower than a total acceptor concentration of the p-type electric field control layer in a range of 2×10to 1×10/cm. 1. An avalanche photodiode comprising:a semi-insulating substrate;a first mesa comprising a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate; anda second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa,{'sup': 11', '12', '2, 'wherein a total donor concentration of the n-type ...

Подробнее
Номер записи: 60
27-06-2013 дата публикации

Photoactive Component Having a Plurality of Transport Layer Systems

Номер: US20130160829A1
Автор: Maennig Bert, Pfeiffer Martin, Schwartz Gregor, Uhrich Christian
Принадлежит: HELIATEK GMBH

A photoactive component has an electrode and an opposing electrode. The electrodes have at least one organic layer system arranged between them, also having at least two photoactive layer systems and, between the photoactive layer systems, at least two different transport layer systems have the same charge carrier type. In this case, one transport layer system matches one of the two photoactive layer systems in energy terms, while the other transport layer system is of transparent design. 116-. (canceled)17. A photoactive component comprising:an electrode;a counterelectrode; and a first photoactive layer system;', 'a second photoactive layer system; and', 'first and second different transport layer systems between the first and second photoactive layer systems, wherein the first and second different transport layer systems have the same charge carrier type and wherein the first transport layer system is energetically adapted to the first photoactive layer system and the second transport layer system is embodied in a transparent fashion., 'an organic layer system arranged between the electrode and the counterelectrode, the organic layer system comprising18. The photoactive component according to claim 17 , wherein the first and/or second transparent transport layer system has a conductivity of ≧1×10S/cm and/or is doped.19. The photoactive component according to claim 17 , wherein the first and second transport layer systems directly adjoin one another and/or both are transparent.20. The photoactive component according to claim 17 , wherein one or both the first and second transport layer systems comprise one or more organic materials.21. The photoactive component according to claim 17 , wherein transport energy level positions of the transparent transport layer system are in the range of −5.5 eV to −4.9 eV if a p-type transport layer system is involved and are in the range of −4.5 eV to −3.5 eV if an n-type transport layer system is involved.22. The photoactive ...

Подробнее
Номер записи: 61
27-06-2013 дата публикации

PHOTOVOLTAIC DEVICE

Номер: US20130160846A1
Автор: YATA Shigeo
Принадлежит: SANYO ELECTRIC CO., LTD.

A photovoltaic device is provided which comprises: a transparent substrate; a front-side electrode layer formed over the substrate and comprising a transparent conductive film; a photovoltaic unit formed over the front-side electrode layer; and a backside electrode layer formed over the photovoltaic unit and comprising a transparent conductive film. The backside electrode layer has a structure in which a contact region joined with the photovoltaic unit, a light scattering region having a lower dopant concentration than the contact region, and a conductive region having a higher density than the light scattering region, are layered. 1. A photovoltaic device comprising:a transparent substrate;a front-side electrode layer formed over the substrate and comprising a transparent conductive film;a photovoltaic unit formed over the front-side electrode layer; anda backside electrode layer formed over the photovoltaic unit and comprising a transparent conductive film, whereinthe backside electrode layer has a structure in whicha first contact region joined with the photovoltaic unit,a first light scattering region having a lower dopant concentration than the first contact region, anda first conductive region having a higher density than the first light scattering region, are layered.2. The photovoltaic device according to claim 1 , whereinthe front-side electrode layer has a structure in whicha second contact region joined with the photovoltaic unit,a second light scattering region having a lower dopant concentration than the second contact region, anda second conductive region having a higher density than the second light scattering region, are layered.3. The photovoltaic device according to claim 1 , whereinno metal layer is provided over the backside electrode layer.4. A photovoltaic device comprising:a crystalline semiconductor substrate;a first amorphous semiconductor layer which is intrinsic and which is formed over a surface opposite to a light receiving surface of ...

Подробнее
Номер записи: 62
04-07-2013 дата публикации

THREE-DIMENSIONAL THIN-FILM SOLAR CELLS

Номер: US20130167904A1
Автор: Moslehi Mehrdad M.
Принадлежит: SOLEXEL, INC.

A three-dimensional thin-film solar cell , comprising a three-dimensional thin-film solar cell substrate comprising a plurality of single-aperture or dual-aperture unit cells with emitter junction regions and doped base regions , emitter metallization regions and base metallization regions . Optionally, the three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency. 1. A three-dimensional thin-film solar cell , comprising:a three-dimensional thin-film solar cell substrate comprising emitter junction regions and doped base regions;emitter metallization regions; andbase metallization regions,wherein said three-dimensional thin-film solar cell substrate comprises a plurality of single-aperture unit cells.2. The three-dimensional thin-film solar cell of claim 1 , wherein said emitter junction regions and doped base regions comprise selective emitter junction regions and selective doped base regions.3. The three-dimensional thin-film solar cell of claim 1 , wherein said emitter junction regions comprise self-aligned emitter junction regions claim 1 , said doped base regions comprise self-aligned doped base regions claim 1 , said emitter metallization regions comprise self-aligned emitter metallization regions claim 1 , and said base metallization regions comprise self-aligned base metallization regions.4. The three-dimensional thin-film solar cell of claim 1 , wherein said three-dimensional thin-film solar cell substrate comprises a silicon substrate.5. The three-dimensional thin-film solar cell of claim 4 , wherein said silicon substrate comprises a crystalline silicon substrate.6. The three-dimensional thin-film solar cell of claim 1 , wherein said three-dimensional thin-film solar cell substrate comprises a three-dimensional thin-film solar cell substrate with a prism-array design.7. The three-dimensional thin-film solar cell of claim 6 , wherein said prism-array design comprises a hexagonal-prism ...

Подробнее
Номер записи: 63
04-07-2013 дата публикации

DEPOSITION OF PHOTOVOLTAIC THIN FILMS BY PLASMA SPRAY DEPOSITION

Номер: US20130167914A1
Автор: BARTHOLOMEUSZ Brian Josef, BARTHOLOMEUSZ Michael
Принадлежит:

In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer. 1. A method , comprising:providing a substrate suitable for use in a photovoltaic device;plasma spraying one or more layers over the substrate, the average grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer, wherein a grain size of a grain is a measure of a dimension of the respective grain along a plane parallel to the one or more layers and wherein the thickness of a respective layer is a measure of a dimension of the respective layer along a plane perpendicular to the one or more layers.2. The method of claim 1 , wherein the grain size of the grains in each of the one or more layers is at least approximately ten times greater than the thickness of the respective layer.3. The method of claim 1 , wherein plasma spraying one or more layers comprises claim 1 , for each layer to be deposited over the substrate claim 1 , injecting a feedstock material into a Plasma Spray Deposition system claim 1 , and wherein the feedstock material includes the constituent elements claim 1 , compounds claim 1 , or alloys that form the respective layer upon plasma spraying the respective layer.4. The method of claim 3 , further comprising altering the feedstock material blend during the Plasma Spray Deposition process to obtain composition grading in the respective plasma-sprayed layer.5. The method of claim 3 , further comprising altering the feedstock material blend during the Plasma Spray Deposition process to compensate for ...

Подробнее
Номер записи: 64
04-07-2013 дата публикации

Solar cell system manufacturing method

Номер: US20130171761A1
Автор: Qun-Qing Li, Shou-Shan Fan, Yuan-Hao Jin
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

A solar cell system making method includes steps of making a round P-N junction by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; cutting the round P-N junction into a plurality of arc shaped solar cell preforms; forming an arc shaped surface by stacking the plurality of arc shaped solar cell preforms along a first direction and forming an electrode layer between each adjacent two of the plurality of arc shaped solar cell preforms; and forming a first collection electrode and a second collection electrode to form an arc shaped solar cell system having a photoreceptive surface being on the arc shaped surface and being configured to receive incident light beams.

Подробнее
Номер записи: 65
18-07-2013 дата публикации

Photoelectric conversion device

Номер: US20130180577A1
Автор: Riho KATAISHI, Yoshinobu Asami
Принадлежит: Semiconductor Energy Laboratory Co Ltd

To provide a photoelectric conversion device including a passivation film in which an opening for connection to an electrode does not need to be provided. The photoelectric conversion device includes, between a pair of electrodes, a silicon substrate having p-type conductivity; a silicon semiconductor layer having n-type conductivity which is provided over one surface of the silicon substrate and in contact with one of the pair of electrodes; and an oxide semiconductor layer having p-type conductivity which is provided over the other surface of the silicon substrate and in contact with the other of the pair of electrodes. The oxide semiconductor layer is formed using an inorganic compound which contains an oxide of a metal belonging to any of Groups 4 to 8 in the periodic table as its main component and whose band gap is greater than or equal to 2 eV.

Подробнее
Номер записи: 66
25-07-2013 дата публикации

Nanostructure and Photovoltaic Cell Implementing Same

Номер: US20130186452A1
Автор: ARGO Brian, ARGO John, KU JIE-REN, Stroeve Pieter, VIDU Ruxandra
Принадлежит:

Nanostructures and photovoltaic structures are disclosed. A nanostructure according to one embodiment includes an array of nanocables extending from a substrate, the nanocables in the array being characterized as having a spacing and surface texture defined by inner surfaces of voids of a template; an electrically insulating layer extending along the substrate; and at least one layer overlaying the nanocables. A nanostructure according to another embodiment includes a substrate; a portion of a template extending along the substrate, the template being electrically insulative; an array of nanocables extending from the template, portions of the nanocables protruding from the template being characterized as having a spacing, shape, and surface texture defined by previously-present inner surface of voids of the template; and at least one layer overlaying the nanocables. 1. A photovoltaic device , comprising:a substrate;an array of metallic nanocables extending from an upper surface of the substrate;a semiconductive layer covering each metallic nanocable of the array of metallic nanocables and the upper surface of the substrate; anda transparent conductive oxide layer covering the semiconductive layer.2. The photovoltaic device of claim 1 , wherein the substrate comprises a metal.3. The photovoltaic device of claim 1 , wherein the semiconductive layer comprises a p-type semiconductive layer and a n-type semiconductive layer.4. The photovoltaic device of claim 3 , wherein the p-type semiconductive layer separates the n-type semiconductive layer from the array of metallic nanocables and the upper surface of the metallic substrate.5. The photovoltaic device of claim 1 , wherein the semiconductive layer comprises one or more of silicon claim 1 , amorphous silicon claim 1 , polycrystalline silicon claim 1 , single crystal silicon claim 1 , cadmium telluride claim 1 , gallium arsenide claim 1 , cadmium sulfide claim 1 , copper indium selenide claim 1 , and copper indium ...

Подробнее
Номер записи: 67
25-07-2013 дата публикации

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

Номер: US20130186456A1
Автор: BABA Toshiaki, Goto Ryo, HISHIDA Yuji, Ide Daisuke, Mishima Takahiro, Mori Hiroyuki, Morigami Mitsuaki, SAKATA Hitoshi, SHIGEMATSU Masato
Принадлежит: SANYO ELECTRIC CO., LTD.

An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench. 1. A solar cell , comprising:a semiconductor substrate having a light-receiving surface and a rear surface;a first semiconductor layer having a first conductivity type;a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, anda trench formed in the rear surface, whereinthe first semiconductor layer is formed on the rear surface in which the trench is not formed, andthe second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.2. The solar cell according to claim 1 , wherein the side surface is inclined to be continuous with the bottom surface.3. The solar cell according to claim 1 , wherein the side surface and the bottom surface are continuous to form an arc shape.4. The solar cell according to claim 1 , wherein a junction between the second semiconductor layer and the side surface and a junction between the second semiconductor layer and the bottom surface are hetero-junctions.5. The solar cell according to claim 1 , wherein the semiconductor ...

Подробнее
Номер записи: 68
25-07-2013 дата публикации

THERMO-TUNNELING DESIGN FOR QUANTUM WELL PHOTOVOLTAIC CONVERTER

Номер: US20130186458A1
Автор: Alemu Andenet, Freundlich Alexandre
Принадлежит: THE UNIVERSITY OF HOUSTON SYSTEM

A design of a quantum well region that allows faster and more efficient carrier collection in quantum well solar cells. It is shown that for a quantum well material system displaying a negligible valence band offset, the conduction band confinement energies and barrier thicknesses can be designed to favor a sequential thermionic promotion and resonant tunneling of electrons to the conduction band continuum resulting in faster carrier collection rates than for a conventional design. An evaluation of the proposed design in the context of devices incorporating GaAs/GaAsN quantum wells shows a collection of all photo-generated carriers within several to tenths of ps (10s) from deep quantum wells rather than several ns, as it is the case for conventional designs. The incorporation of the proposed design in single and multijunction solar cells is evaluated with efficiency enhancements. 1. A multi-quantum well solar cell comprising:two or more subcells incorporated into the intrinsic region of a GaAs p-i-n solar cell;wherein each subcell comprises at least a first quantum well and a second quantum well; andwherein the first quantum well and the second quantum well are resonantly coupled.2. The multi-quantum well solar cell of claim 1 , wherein the energy levels of the quantum wells are optimized to facilitate electronic escape using both thermoionic and quantum tunneling.3. The multi-quantum well solar cell of claim 1 , wherein the conversion efficiency of the solar cell is in excess of 35% at AM0.4. The multi-quantum well solar cell of claim 1 , wherein collection of photo-generated carriers occurs within 0.1 to 10 ps.5. A multi-quantum well solar cell comprising: [{'sub': 0.982', '0.018', '0.982', '0.018', '0.982', '0.018, 'wherein each subcell comprises a first quantum well consisting of 30 monolayers of GaAsN, a second quantum well consisting of 12 monolayers of GaAsN, and a third quantum well consisting of 3 monolayers of GaAsN;'}, 'wherein the first quantum well is ...

Подробнее
Номер записи: 69
25-07-2013 дата публикации

Solar cell and method of manufacturing the same

Номер: US20130186460A1
Автор: Hsin-Jui Chen, Miin-Jang Chen
Принадлежит: National Taiwan University NTU

A method of manufacturing a solar cell includes following steps. A first-conductive-type silicon wafer is provided. The silicon wafer has a first (front) surface and a second (back) surface facing each other, and a plurality of nanorods are located on the first surface. A doping process is performed, so that the conductive type of the nanorods and the conductive type of one portion of the silicon wafer located below the nanorods are changed to a second conductive type. A first electrode is formed on the second surface, and a first annealing process is performed on the first electrode. A second electrode is formed on a partial region of the first surface. An atomic layer deposition process is performed to form a passivation layer on the first surface and surfaces of the nanorods.

Подробнее
Номер записи: 70
01-08-2013 дата публикации

Single and multi-junction light and carrier collection management cells

Номер: US20130192663A1
Автор: Stephen J. Fonash, Wook Jun Nam
Принадлежит: UAB RESEARCH FOUNDATION

A material design is provided for a light and carrier collection (LCCM) architecture in single junction and multi-junction photovoltaic and light sensor devices. The LCCM architecture improves performance and, when applied to single or multi-junctions, can lead to solar cells on flexible plastic substrates which can be easily deployed and even draped over various shapes and forms. The device has an array of conducting nano-elements in electrical and physical contact with the planar electrode. A spacer of 0 to 100 nm in thickness may be used to contact the array of conducting nano-elements. One or more volume regions comprised of at least one light absorbing material is present with the first in simultaneous contact with said spacer to form an operating photovoltaic single- or multi-junction device with periodic undulations to enhance trapping of the impinging light and photocarrier collection throughout the absorber volume regions.

Подробнее
Номер записи: 71
08-08-2013 дата публикации

Solar cell with microstructure therein

Номер: US20130199602A1
Автор: Chau-Nan Hong, Chih-Jui NI, Jyong-Sian Tsai, Tung-Hsien Wu, Wen-Chi Hou, Wen-Yi Tsai
Принадлежит: Bureau of Energy Ministry of Economic Affairs

A solar cell includes a substrate; multiple silicon rods formed on a surface of the substrate; an insulator layer formed on the surface of the substrate while the silicon rods are still exposed; a silicon shell layer formed on outside of each of the silicon rods; and a In x Ga 1−x As y P 1−y layer formed on the silicon shell layer to form a first cell, wherein 0≦x≦1 and 0≦y≦1.

Подробнее
Номер записи: 72
08-08-2013 дата публикации

SOLAR CELLS AND METHODS OF FABRICATION THEREOF

Номер: US20130199604A1
Автор: Hutchings Douglas Arthur, Mohammed Hafeezuddin, Shumate Seth Daniel
Принадлежит: Silicon Solar Solutions

A solar cell comprises a region formed on a substrate. The region has a dopant. The region can be one of a selective emitter and a back surface field of the solar cell. A grid line is deposited over a first portion of the region. A dopant profile is generated that has a concentration of electrically active dopants at a surface portion on the first portion of the region smaller than the concentration of electrically active dopants at a distance away from the surface portion. In an embodiment, an electrical activity of a portion of the dopant is deactivated in a second portion of the region outside the grid line. The grid line is used as a mask for deactivating the dopant. 183-. (canceled)84. A solar cell comprising:a first region formed on a first side of a substrate, the first region having a first dopant; anda first grid line over a first portion of the first region, wherein an electrical activity of a part of the first dopant is deactivated in a second portion of the first region outside the grid line.85. The solar cell of claim 84 , wherein the first dopant is distributed substantially uniformly in the second portion.86. The solar cell of claim 84 , wherein the portion of the first dopant is bound to chemical species and is electrically inactive.87. The solar cell of claim 84 , wherein the region is a selective emitter formed on a solar cell substrate.88. The solar cell of claim 84 , wherein the region is a back surface field of the solar cell.89. The solar cell of claim 84 , wherein an electrically active first dopant concentration at a surface portion of the first portion is smaller than the electrically active first dopant concentration at a distance away from the surface portion.90. The solar cell of claim 84 , further comprisinga passivation layer on the first region, wherein the grid line is in direct contact with the first portion of the first region.91. The solar cell of claim 84 , further comprisinga second region having a second dopant on a second side ...

Подробнее
Номер записи: 73
08-08-2013 дата публикации

Process for Producing a Transparent Electrode, Method of Manufacturing a Photovoltaic Cell Array

Номер: US20130199610A1
Автор: Kun Ho Ahn
Принадлежит: Schueco TF GmbH and Co KG

A method can be used to produce a photovoltaic cell. A first transparent electrically conductive layer is deposited over the substrate. A metal oxide layer is deposited over a surface of the electrically conductive layer facing away from the substrate. The metal oxide layer is subdivided into a number of metal particles by a thermal decomposition. A second transparent electrically conductive layer is deposited over the metal particles.

Подробнее
Номер записи: 74
15-08-2013 дата публикации

Solar Array of Transparent Nanoantennas

Номер: US20130206223A1
Автор: Kruglick Ezekiel
Принадлежит: EMPIRE TECHNOLOGY DEVELOPMENT LLC

Implementations and techniques for solar arrays of transparent nanoantennas are generally disclosed. 110-. (canceled)11. A solar array that is arranged to generate an electrical signal in response light , the solar array comprising:a transparent substrate having a surface; anda transparent conductive layer coupled to the surface of the transparent substrate, wherein the transparent conductive layer is arranged as an array of transparent nanoantennas, wherein the array of transparent nanoantennas is arranged to convert an infrared energy from the light into the electrical signal while permitting a visible portion of the light to pass therethrough.12. The solar array of claim 11 , wherein the transparent conductive layer comprises one or more of indium tin oxide and/or a ceramic matrix containing nanotubes claim 11 , and wherein the transparent conductive layer has a thickness in a range from about 0.1 microns to about 1.0 microns.13. The solar array of claim 11 , wherein each transparent nanoantenna comprises one of spiral-type nanoantennas claim 11 , bow-tie-type nanoantennas claim 11 , square-type nanoantennas claim 11 , and/or combinations thereof.14. The solar array of claim 11 , wherein the array of transparent nanoantennas comprises one or more of a windshield claim 11 , a window claim 11 , a lens claim 11 , a container claim 11 , and/or combinations thereof.15. The solar array of claim 11 , further comprising:a first electrode operably connected to a first end of a row of the array of transparent nanoantennas;a second electrode operably connected to a second end of the row of the array of transparent nanoantennas;a first rectifier operably connected to the first electrode; anda second rectifier operably connected to the second electrode.16. An apparatus that is arranged to generate an electrical signal in response light claim 11 , the apparatus comprising: a transparent substrate having a surface; and', 'a transparent conductive layer coupled to the surface of ...

Подробнее
Номер записи: 75
15-08-2013 дата публикации

NANOWIRES AND METHODS OF MAKING AND USING

Номер: US20130206232A1
Автор: Korgel Brian A., Steinhagen Chet
Принадлежит: Board of Regents of the University of Texas System

Nanorod and nanowire compositions are disclosed comprising copper indium selenide, copper indium gallium selenide, copper indium sulfide, or a combination thereof. Also disclosed are photovoltaic devices comprising the nanorod and/or nanowire compositions. Also disclosed are methods for producing the nanorod and nanowire compositions, and photovoltaic devices described herein. 1. A nanowire or nanorod comprising a CIS material , a CIGS material , or a combination thereof.2. The nanowire or nanorod of claim 1 , comprising a CIS material.3. The nanowire or nanorod of claim 1 , comprising a CIGS material.4. The nanowire or nanorod of claim 1 , wherein the CIS material and/or the CIGS material comprises at least one of copper indium selenide claim 1 , copper indium gallium selenide claim 1 , copper indium sulfide claim 1 , or a combination thereof.5. The nanowire or nanorod of claim 1 , comprising copper indium selenide.6. The nanowire or nanorod of claim 1 , comprising copper indium gallium selenide.7. The nanowire or nanorod of claim 1 , comprising copper indium sulfide.8. The nanowire or nanorod of claim 1 , the general formula Cu(InGa)Se claim 1 , wherein x is from about 0 to about 1.9. The nanowire or nanorod of claim 1 , having the formula CuInSe.10. The nanowire or nanorod of claim 1 , wherein the material exhibits no or substantially no twinning.11. The nanowire or nanorod of claim 1 , wherein the material is comprised of a single phase.12. The nanowire or nanorod of claim 1 , comprising a chalcopyrite CIS.13. The nanowire or nanorod of claim 1 , comprising a disordered sphalerite phase.14. The nanowire or nanorod of claim 1 , comprising no or substantially no agglomerated material.15. The nanowire or nanorod of claim 1 , wherein the nanowire or nanorod is capable or being printed onto a substrate.16. A layered structure comprising the nanowire or nanorod of .17. The layered structure of claim 16 , wherein at least one layer disposed therein comprises the ...

Подробнее
Номер записи: 76
15-08-2013 дата публикации

Semiconductor structure for a radiation detector and a radiation detector

Номер: US20130207216A1
Автор: Michael Pierschel
Принадлежит: FIRST SENSOR AG

A semiconductor structure for a radiation detector, comprising a substrate composed of a semiconductor material of a first conductivity type, a semiconductor substrate, wherein the semiconductor substrate is provided with a semiconductor layer provided on the substrate and having a higher resistance in comparison to the substrate, of the first conductivity type, and electrically doped with a doping concentration, a plurality of doped regions, wherein the plurality of doped regions are provided in the semiconductor substrate and separated from each other, of a second conductivity type that is opposite from the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate, at least one further doping region, and a cover layer is provided.

Подробнее
Номер записи: 77
22-08-2013 дата публикации

PHOTOVOLTAIC CELL AND METHOD FOR MANUFACTURING THE SAME

Номер: US20130213461A1
Автор: HOSOYA Masahiro, Saito Mitsunaga
Принадлежит:

According to one embodiment, there is provided a method for manufacturing a photovoltaic cell. The method includes forming a structure including a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and containing a p-type semiconductor and a n-type semiconductor, and annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer. 1. A method for manufacturing a photovoltaic cell , comprising:forming a structure comprising a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and including a p-type semiconductor and a n-type semiconductor; andannealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer.2. The method according to claim 1 ,wherein at least one of the p-type semiconductor and the n-type semiconductor is an organic semiconductor.3. The method according to claim 1 ,wherein the photoelectric conversion layer is a layer of bulk hetero-junction type.4. The method according to claim 1 , {'br': None, 'sup': 3', '5, 'i': 'Vac/L<', '2.5×10[V/mm]<2×10[V/mm]'}, 'wherein the AC voltage (Vac) has a value satisfying a relationshipwhere L represents a distance between the pair of electrodes.5. The method according to claim 1 ,wherein the AC voltage has a duty ratio of a forward-bias to reverse-bias of 1:1 to 25:1.6. The method according to claim 1 ,wherein the annealing is carried out at a temperature ranging from 70 to 170° C.7. The method according to claim 1 ,wherein the ...

Подробнее
Номер записи: 78
22-08-2013 дата публикации

AXIALLY-INTEGRATED EPITAXIALLY-GROWN TANDEM WIRE ARRAYS

Номер: US20130213462A1
Автор: Hu Shu, Lewis Nathan S.
Принадлежит: California Institute of Technology

A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions. 1. A nano- or micro-wire comprising a plurality of axial-integrated epitaxially-grown tandem wires comprising at least a first junction comprising a first semiconducting material and at least a second junction comprising a different semiconducting material.2. The nano- or micro-wire of claim 1 , wherein the at least first junction and at least second junction are separated by an ohmic layer.3. The nano- or micro-wire of claim 1 , wherein the ohmic layer and at least second layer comprise a semiconducting material each individually selected from the group consisting of TiO claim 1 , CaTiO claim 1 , SrTiO claim 1 , SrTiO claim 1 , SrTiO claim 1 , RbLaTiO claim 1 , CsLaTiO claim 1 , CsLaTiNbO claim 1 , LaTiO claim 1 , LaTiO claim 1 , LaTiO claim 1 , LaTiO:Ba claim 1 , KaLaZrTiO claim 1 , LaCaTiO claim 1 , KTiNbO claim 1 , NaTiO claim 1 , BaTiO claim 1 , GdTiO claim 1 , YTiO claim 1 , ZrO claim 1 , KNbO claim 1 , RbNbO claim 1 , CaNbO claim 1 , SrNbO claim 1 , BaNbO claim 1 , NaCaNbO claim 1 , ZnNbO claim 1 , CsNbO claim 1 , LaNbO claim 1 , TaO claim 1 , KsPrTaO claim 1 , KTaSiO claim 1 , KTaBO claim 1 , LiTaO claim 1 , KTaO claim 1 , AgTaO claim 1 , KTaO:Zr claim 1 , NaTaO:La claim 1 , NaTaO:Sr claim 1 , NaTaO claim 1 , CaTaO claim 1 , SrTaO claim 1 , NiTaO claim 1 , RbTaO claim 1 , CaTaO claim 1 , SrTaO.KSrTaO claim 1 , RbNdTaO claim 1 , HLaTaO claim 1 , KSrTaO claim 1 , LiCaTaO claim 1 , KBaTaO claim 1 , SrTaO claim 1 , BaTaO claim 1 , HSrBiTaO claim 1 , Mg—Ta Oxide claim 1 , LaTaO claim 1 , LaTaO claim 1 , PbWO claim 1 , RbWNbO claim 1 , RbWTaO claim 1 , CeO:Sr claim 1 , BaCeO claim 1 , NaInO claim 1 , CaInO claim 1 , SrInO ...

Подробнее
Номер записи: 79
22-08-2013 дата публикации

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SOLID-STATE IMAGE SENSOR

Номер: US20130214374A1
Автор: Kokumai Kazuo
Принадлежит: CANON KABUSHIKI KAISHA

A method of manufacturing a semiconductor device includes steps of providing a substrate including a semiconductor portion, a non-porous semiconductor layer, and a porous semiconductor layer arranged between the semiconductor portion and the non-porous semiconductor layer, forming a porous oxide layer by oxidizing the porous semiconductor layer, forming a bonded substrate by bonding a supporting substrate to a surface, on a side of the non-porous semiconductor layer, of the substrate on which the porous oxide layer is formed, and separating the semiconductor portion from the bonded substrate by utilizing the porous oxide layer. 110-. (canceled)11. A solid-state image sensor including a plurality of pixels formed in a single-crystal semiconductor layer , comprising:a wiring structure placed on the single-crystal semiconductor layer; anda supporting substrate which supports the single-crystal semiconductor layer and the wiring structure, the supporting substrate being disposed on the wiring structure,wherein a gap is formed in the single-crystal semiconductor layer so as to isolate pixels from each other.12. A semiconductor device including a single-crystal semiconductor layer , comprising:a porous oxide layer arranged on the single-crystal semiconductor layer,wherein the porous oxide layer is formed by oxidizing a porous semiconductor layer. 1. Field of the InventionThe present invention relates to a semiconductor device, a method of manufacturing the same, and a solid-state image sensor.2. Description of the Related ArtAs a solid-state image sensor such as a CCD or CMOS sensor, a back-side illumination solid-state image sensor capable of achieving higher sensitivity has been proposed. The back-side illumination solid-state image sensor has a photoelectric conversion element such as a photodiode on the front-side surface of a semiconductor substrate such as silicon, and uses the photoelectric conversion element to detect light incident on the back-side surface of the ...

Подробнее
Номер записи: 80
22-08-2013 дата публикации

SOLID-STATE IMAGING DEVICE WITH CHANNEL STOP REGION WITH MULTIPLE IMPURITY REGIONS IN DEPTH DIRECTION AND METHOD FOR MANUFACTURING THE SAME

Номер: US20130214377A1
Автор: Hirata Kiyoshi
Принадлежит: SONY CORPORATION

Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate. 1. A solid-state imaging device comprising:a substrate;a photosensor in the substrate; anda channel stop section at a side of the photosensor in the substrate, wherein, the channel stop section has a plurality of adjoining impurity regions along a direction of increasing depth of the substrate, and concentrations of the impurity regions gradually increase from bottom to surface of the substrate.2. The solid-state imaging device according to claim 1 , wherein each impurity region of the plurality of adjoining impurity regions claim 1 , when viewed in the direction of increasing depth of the substrate claim 1 , has a generally uniform cross-sectional area that is different from the generally uniform cross-sectional area of at least one other impurity region of the plurality of adjoining impurity regions.3. The solid-state imaging device according to claim 1 , wherein claim 1 , for each successive impurity region of the plurality of adjoining impurity regions in the direction of increasing depth of the substrate claim 1 , the generally uniform cross-sectional area is less than that of a preceding adjoining impurity region.4. The solid-state imaging device according to claim 1 , wherein each impurity region of the plurality of adjoining impurity regions claim 1 , when viewed in the direction of increasing depth of ...

Подробнее
Номер записи: 81
29-08-2013 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND SOLID-STATE IMAGING APPARATUS

Номер: US20130221416A1
Автор: YANAGITA Masashi
Принадлежит: SONY CORPORATION

A method of manufacturing a semiconductor device includes the steps of forming a gate electrode of a transistor on an insulator layer on a surface of a semiconductor substrate, forming an isolation region by performing ion implantation of an impurity of a first conductivity type into the semiconductor substrate, forming a lightly doped drain region by performing, after forming a mask pattern including an opening portion narrower than a width of the gate electrode on an upper layer of the gate electrode of the transistor, ion implantation of an impurity of a second conductivity type near the surface of the semiconductor substrate with the mask pattern as a mask, and forming a source region and a drain region of the transistor by performing ion implantation of an impurity of the second conductivity type into the semiconductor substrate after forming the gate electrode of the transistor. 15-. (canceled)6. A solid-state imaging device comprising:a photoelectric conversion unit configured to store a signal charge according to incident light; anda semiconductor device including an isolation region which is an impurity region of a first conductivity type, a source region and a drain region of a transistor which are impurity regions of a second conductivity type, a gate electrode of the transistor which is provided on an insulator layer on a surface of a semiconductor substrate formed with the isolation region and the source region and the drain region of the transistor, and a lightly doped drain region of the second conductivity type which is provided near the surface of the semiconductor substrate in a region narrower than a width of the gate electrode of the transistor.7. A solid-state imaging apparatus comprising:a photoelectric conversion unit configured to store a signal charge according to incident light;a semiconductor device including an isolation region which is an impurity region of a first conductivity type, a source region and a drain region of a transistor ...

Подробнее
Номер записи: 82
05-09-2013 дата публикации

SEMICONDUCTOR GRAIN AND OXIDE LAYER FOR PHOTOVOLTAIC CELLS

Номер: US20130228217A1
Автор: Girt Erol, Munteanu Mariana R.
Принадлежит: Zetta Research and Development LLC-AQT Series

Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited. 1. A photovoltaic cell , comprising:one or more overlying electron-conducting layers each comprising one or more electron-conducting materials;one or more overlying hole-conducting layers each comprising one or more hole-conducting materials;one or more overlying photo active conversion layers, each of the overlying photo active conversion layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the photo active conversion layers comprising one or more distinct overlying semiconductor and oxide layers, each semiconductor and oxide layer comprising a multiplicity of semiconductor grains arranged in a distinct oxide matrix, wherein each of the semiconductor grains is substantially columnar along an axis perpendicular to an inter-layer planar surface of the semiconductor and oxide layer, wherein each of the semiconductor grains has a height equal to that of a thickness of the respective distinct semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the semiconductor grains; the one or more overlying electron-conducting layers are deposited over the substrate, the one or more photo active conversion layers are deposited over the one or more overlying electron-conducting layers, and the one or more overlying hole-conducting layers are deposited over the one or more photo active conversion layers; or', 'the one or more overlying hole-conducting layers are deposited over the ...

Подробнее
Номер записи: 83
05-09-2013 дата публикации

QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME

Номер: US20130228749A1
Автор: Clifford Jason Paul, Howard Ian, Klem Ethan J.D., Konstantatos Gerasimos, Levina Larissa, Sargent Edward Hartley
Принадлежит: InVisage Technologies, Inc.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described. 1an integrated circuit having a plurality of pixel electrodes;a first layer in electrical communication with the plurality of pixel electrodes, the first layer including an optically sensitive material; anda second layer coupled to the first layer.. An image sensor, comprising: This application is a continuation of U.S. patent application Ser. No. 13/612,103, filed Sep. 12, 2012, which is a continuation of U.S. patent application Ser. No. 13/323,387, filed Dec. 12, 2011, now issued as U.S. Pat. No. 8,284,587, which is a continuation of U.S. patent application Ser. No. 12/852,328, filed Aug. 6, 2010, now issued as U.S. Pat. No. 8,102,693, which is a continuation of U.S. patent application Ser. No. 11/510,510, filed Aug. 24, 2006, now issued as U.S. Pat. No. 7,773,404, which claims the benefit of priority under 35 U.S.C. §119(e) to U.S. Provisional Application Ser. No. 60/710,944, filed Aug. 25, 2005, and which is also a continuation-in-part of U.S. application Ser. No. 11/327,655, filed Jan. 9, 2006, which claims the benefit of priority under 35 U.S.C. §119(e) to U.S. Provisional Application Ser. No. 60/641,766, filed Jan. 7, ...

Подробнее
Номер записи: 84
12-09-2013 дата публикации

Trench process and structure for backside contact solar cells with polysilicon doped regions

Номер: US20130237007A1
Автор: David D. Smith, Denis De Ceuster, Peter John Cousins
Принадлежит: Individual

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Подробнее
Номер записи: 85
19-09-2013 дата публикации

TRENCH PROCESS AND STRUCTURE FOR BACKSIDE CONTACT SOLAR CELLS WITH POLYSILICON DOPED REGIONS

Номер: US20130240029A1
Автор: Smith David D.
Принадлежит:

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched. 1. A solar cell comprising:a solar cell substrate having a front side configured to face the sun during normal operation and a backside opposite the front side;a P-type doped region and an N-type doped region of the solar cell over the backside of the solar cell substrate;a first dielectric layer between the solar cell substrate and the P-type and N-type doped regions; anda trench structure separating the P-type doped region and the N-type doped region, and dividing the first dielectric layer.2. The solar cell of wherein the P-type and N-type doped regions comprise polysilicon.3. The solar cell of wherein the solar cell substrate comprises an N-type doped silicon substrate.4. The solar cell of wherein the first dielectric layer comprises silicon dioxide formed to a thickness between 5 to 40 Angstroms on a backside surface of the solar cell substrate.5. The solar cell of wherein the trench has a textured surface that absorbs solar radiation incident on the backside of the solar cell substrate.6. The solar cell of further comprising a second dielectric layer in the trench.7. The solar cell of further comprising:a passivation layer between the second dielectric layer and the solar cell substrate.8. The solar cell of further comprising a diffused passivation region in the solar cell substrate under the trench claim 1 , wherein the diffused passivation ...

Подробнее
Номер записи: 86
19-09-2013 дата публикации

SEMICONDUCTOR DEVICE AND RECEIVER

Номер: US20130240835A1
Автор: TAKAHASHI Tsuyoshi
Принадлежит:

A semiconductor device includes a p-type semiconductor layer, an n-type semiconductor layer, a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other, and a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction. Upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion. 1. A semiconductor device , comprising:a p-type semiconductor layer;an n-type semiconductor layer;a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other; anda multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction; wherein,upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion.2. The semiconductor device according to claim 1 , wherein the multiple quantum barrier structure or the multiple quantum well structure is provided in the p-type semiconductor layer;the p-type semiconductor layer and the n-type semiconductor layer are joined, at the pn junction portion, to each other in such a manner as to sandwich therebetween one barrier layer included in the multiple quantum barrier structure or one well layer included in the multiple quantum well structure; andthe portion that allows band-to-band tunneling of electros is formed at the pn junction portion upon biasing in the reverse direction from the one barrier layer or the one well layer and the n-type semiconductor layer, or from ...

Подробнее
Номер записи: 87
19-09-2013 дата публикации

ROOM TEMPERATURE NANOWIRE IR, VISIBLE AND UV PHOTODETECTORS

Номер: US20130240837A1
Автор: Agnihotri Pratik, Bandyopadhyay Saumil, Bandyopadhyay Supriyo
Принадлежит:

Room temperature IR and UV photodetectors are provided by electrochemical self-assembly of nanowires. The detectivity of such IR detectors is up to ten times better than the state of the art. Broad peaks are observed in the room temperature absorption spectra of 10-nm diameter nanowires of CdSe and ZnS at photon energies close to the bandgap energy, indicating that the detectors are frequency selective and preferably detect light of specific frequencies. Provided is a photodetector comprising: an aluminum substrate; a layer of insulator disposed on the aluminum substrate and comprising an array of columnar pores; a plurality of semiconductor nanowires disposed within the pores and standing vertically relative to the aluminum substrate; a layer of nickel disposed in operable communication with one or more of the semiconductor nanowires; and wire leads in operable communication with the aluminum substrate and the layer of nickel for connection with an electrical circuit. 1. A photodetector comprising:an array of semiconductor nanowires either standing vertically on a conducting substrate and capped by a conductor transparent to light, or lying horizontally on a non-conducting substrate and capped by conductors at both ends; andwire leads attached to the conductors and conducting substrate for connection to an electrical circuit.2. The photodetector of claim 1 , wherein the semiconductor nanowires have a diameter of from 5-50 nm.3. The photodetector of claim 1 , wherein the semiconductor nanowires comprise any direct bandgap semiconductor of bandgap energy between 0.3 eV and 4 eV or direct bandgap insulator of bandgap between 4 and 10 eV.4. The photodetector of claim 1 , wherein the nanowires are fabricated by self-assembly claim 1 , or nanolithography claim 1 , or combinations thereof.5. The photodetector of claim 1 , wherein an insulating layer is disposed between the semiconductor nanowires and one of the conductors or the conducting substrate at one end.6. The ...

Подробнее
Номер записи: 88
26-09-2013 дата публикации

Nanostructured devices

Номер: US20130247966A1
Автор: BLACK Marcie R., Buchine Brent A., Modawar Faris
Принадлежит: BANDGAP ENGINEERING, INC.

A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon. 1. A device comprising two or more electrical contacts suitable for connection of the device to external circuitry , a substrate , a collection of nanowires partially covering the substrate , and a thin film covering portions of the substrate not covered by nanowires of the collection but located between nanowires of the collection , wherein the thin film comprises a metal and forms part of one of the two or more electrical contacts.2. The device of claim 1 , wherein the device operates as a photovoltaic cell or a light emitting diode.3. The device of claim 1 , wherein the thin film is continuous.4. The device of claim 1 , wherein the thin film is at least about 50 nm below the top of the nanowires.5. The device of claim 4 , wherein the thin film is at least about 100 nm below the top of the nanowires.6. The device of claim 5 , wherein the thin film is at least about 200 nm below the top of the nanowires.7. The device of claim 1 , wherein the thin film comprises silver.8. The device of claim 1 , wherein the substrate comprises silicon.9. The device of claim 1 , wherein the nanowires comprise silicon.10. The device of claim 1 , wherein the nanowires are integral with the substrate.12. The device of claim 11 , wherein the height of nanostructure above the crystalline semiconductor substrate is no more than about 1 μm.13. The device of claim 12 , wherein ...

Подробнее
Номер записи: 89
03-10-2013 дата публикации

SOLAR CELLS

Номер: US20130255759A1
Автор: FAN SHOU-SHAN, JIN YUAN-HAO, LI QUN-QING
Принадлежит:

A solar cell is provided. The solar cell includes a silicon substrate, a back electrode, a doped silicon layer, and an upper electrode. The silicon substrate includes a first surface, a second surface, and a number of three-dimensional nano-structures located on the first surface. The three-dimensional nano-structures are located on the second surface. The three-dimensional nano-structures are linear protruding structures that are spaced from each other, and a cross section of each linear protruding structure is an arc. The doped silicon layer is attached to the three-dimensional nano-structures and the second surface between the three-dimensional nano-structures. 1. A solar cell , comprising:a silicon substrate comprising a first surface, a second surface, and a plurality of three-dimensional nano-structures located on the second surface; wherein the plurality of three-dimensional nano-structures are linear protruding structures that are spaced from each other, and a cross section of each linear protruding structure is an arc;a back electrode located on and Ohmic connected to the first surface of the silicon substrate;a doped silicon layer attached to the plurality of three-dimensional nano-structures and covering the second surface of the silicon substrate that is between the plurality of three-dimensional nano-structures; andan upper electrode located on at least part of the doped silicon layer.2. The solar cell of claim 1 , wherein the plurality of three-dimensional nano-structures are uniformly distributed on the second surface to form an array.3. The solar cell of claim 2 , wherein the plurality of three-dimensional nano-structures in the array are substantially equidistantly arranged claim 2 , concentric circularly arranged claim 2 , or concentric rectangle arranged.4. The solar cell of claim 1 , wherein the plurality of three-dimensional nano-structures are arranged along a straight line claim 1 , a curvy line claim 1 , or a polygonal line.5. The solar cell ...

Подробнее
Номер записи: 90
03-10-2013 дата публикации

PHOTOVOLTAIC CELL AND METHODS FOR MANUFACTURE

Номер: US20130255773A1
Автор: BRICEÑO José, Matsumaru Koji
Принадлежит:

A material is manufactured from a single piece of semiconductor material. The material manufactured includes a top layer of a semiconductor compound and a bottom layer of a semiconductor bulk. The material may also have an intrinsic semiconductor layer. The material is created from a transformative process on the single-piece semiconductor material caused by heating a semiconductor material having an impurity under particular conditions. The material manufactured exhibits photovoltaic properties because the layers formed during the transformative process create a p-i-n, a p-n, or an n-n junction having a band-gap difference between the n-type layers. 1. A photovoltaic material comprising:a bulk layer of semiconductor material;an intermediate layer provided over the bulk layer; anda top layer provided over the intermediate layer, the top layer comprising a compound semiconductor material,whereby the bulk layer, the intermediate layer, and the top layer are created by a transformative process on a single-piece semiconductor material, the single-piece semiconductor material having an impurity.2. The photovoltaic material of claim 1 , wherein the transformative process is caused by performing the steps of:exposing of a top surface of the single-piece semiconductor material to an energy source, whereby the energy source causes heating of a portion of the single-piece semiconductor material; andceasing exposure of the top surface of the single-piece semiconductor material to the energy source, whereby the exposing step and the ceasing step cause the single-piece semiconductor material to transform into the structure comprising the bulk layer, the intermediate layer, and the top layer.3. The photovoltaic material of claim 2 , wherein the portion of the single-piece semiconductor material is heated to a temperature of between 800 K and 1700 K.4. The photovoltaic material of claim 2 , wherein the steps of exposing and ceasing occurs in a vacuum.5. The photovoltaic material ...

Подробнее
Номер записи: 91
03-10-2013 дата публикации

PHOTOVOLTAIC CELL AND PROCESS OF MANUFACTURE

Номер: US20130255774A1
Автор: BRICEÑO José, Matsumaru Koji, Nishi Yusuke
Принадлежит:

A material is manufactured from a single piece of semiconductor material. The semiconductor material can be an n-type semiconductor. Such a manufactured material may have a top layer with a crystalline structure, transitioning into a transition layer, further transitioning into an intermediate layer, and further transitioning to the bulk substrate layer. The orientation of the crystalline pores of the crystalline structure align in layers of the material. The transition layer or intermediate layer includes a material that is substantially equivalent to intrinsic semiconductor. Also described is a method for manufacturing a material from a single piece of semiconductor material by exposing a top surface to an energy source until the transformation of the top surface occurs, while the bulk of the material remains unaltered. The material may exhibit photovoltaic properties. 1. A photovoltaic material comprising: exposing a single-piece semiconductor material to an energy source, whereby the whereby the energy source causes heating of a portion of the single-piece semiconductor material; and', 'ceasing exposure of the single-piece semiconductor material to an energy source, whereby the exposing step and the ceasing step cause the single-piece semiconductor material to transform into the photovoltaic semiconductor material with one or more photovoltaic structures at one or more surfaces., 'a photovoltaic semiconductor material with one or more photovoltaic structures at one or more surfaces, whereby the semiconductor material with the one or more photovoltaic structures is created by performing the steps of2. The photovoltaic material of claim 1 , created by further performing the steps of:performing processes for creating a photovoltaic material with lowered resistivity at a bottom surface of the photovoltaic semiconductor material whereby the lowered resistivity causes a photovoltaic cell using the photovoltaic material to produce greater output than without a lowered ...

Подробнее
Номер записи: 92
03-10-2013 дата публикации

WIDE BAND GAP PHOTOVOLTAIC DEVICE AND PROCESS OF MANUFACTURE

Номер: US20130255775A1
Автор: BRICEÑO José, Okumura Daisuke, SHIDA Kuniaki
Принадлежит:

A wide band gap, heterojunction photovoltaic material comprises a bulk layer, a high-resistivity layer and a microcrystalline silicon carbide layer. The heterojunction semiconductor material is formed by heating a single-piece semiconductor material to form a high-resistivity layer over a bulk layer, the high-resistivity layer having SiC seed crystals at the top surface. A layer of SiC is sputtered over the high-resistivity layer, and the structure is annealed. The annealing and the SiC seed crystals causes the sputtered SiC layer to convert into a microcrystalline β-SiC layer. When the layer of SiC is sputtered using a p-type SiC target, a p-type SiC layer is formed over the high-resistivity layer. The heterojunction material may exhibit photovoltaic properties. Applications include forming a photovoltaic device with the heterojunction material. 1. A heterojunction semiconductor , comprising:a bulk layer of semiconductor material;a high-resistivity layer provided over the bulk layer; anda microcrystalline β-SiC layer provided over the high-resistivity layer, created by performing the steps of:', 'exposing of a top surface of a single-piece semiconductor material to an energy source, whereby the energy source causes heating of a portion of the single-piece semiconductor material;', 'ceasing exposure of the top surface of the single-piece semiconductor material to the energy source, whereby the exposing step and the ceasing step cause the single-piece semiconductor material to transform into the structure comprising the bulk layer, the high-resistivity layer, and a plurality of SiC seed crystals at the surface of the high-resistivity layer;', 'forming a SiC layer over the high-resistivity layer having the plurality of SiC seed crystals; and', 'performing a first annealing the structure comprising the bulk layer, the high-resistivity layer, the plurality of SiC seed crystals at the surface of the high-resistivity layer, and the SiC layer,', 'whereby the annealing ...

Подробнее
Номер записи: 93
10-10-2013 дата публикации

SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20130264673A1
Автор: Yoshihara Ikuo
Принадлежит:

A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion. 1. A solid-state imaging device comprising:a pixel region includes a plurality of pixels made of a photoelectric conversion element and a peripheral region in a substrate;a first isolation layer is formed in the pixel region;a second isolation layer is formed in the peripheral region; andwherein the second isolation layer is shaped differently than the first isolation layer.2. The solid-state imaging device according to claim 1 , further comprising:an isolation region is formed under the first isolation layer.3. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion element include at least a first conductivity type of first impurity element and a second conductivity type of second impurity element.4. The solid-state imaging device according to claim 1 , wherein the second isolation layer is shallow trench isolation.5. The solid-state imaging device according to claim 1 , wherein the second impurity element isolation region is formed in a second element isolation portion.6. The solid-state imaging device according to claim 1 , further comprising the pixel includes a transfer transistor to read out a signal charge from the photoelectric ...

Подробнее
Номер записи: 94
17-10-2013 дата публикации

Photovoltaic junction for a solar cell

Номер: US20130269760A1
Автор: Ben Browne, Massimo Mazzer, Thomas Tibbits
Принадлежит: Individual

A photovoltaic junction for a solar cell is provided. The photovoltaic junction has an intrinsic region comprising a multiple quantum well stack formed from a series of quantum wells separated by barriers, in which the tensile stress in some of the quantum wells is partly or completely balanced by compressive stress in the others of the quantum wells. The overall elastostatic equilibrium of the multiple quantum well stack may be ensured by engineering the structural and optical properties of the quantum wells only, with the barriers having the same lattice constant as the materials used in the oppositely doped semiconductor regions of the junction, or equivalently as the actual lattice size of the junction or intrinsic region, or the bulk or effective lattice size of the substrate. Alternatively, the barriers may contribute to the stress balance.

Подробнее
Номер записи: 95
17-10-2013 дата публикации

SEMICONDUCTOR STRUCTURES FOR FUEL GENERATION

Номер: US20130269761A1
Автор: Ardo Shane, Atwater Harry A., Coridan Robert, Fountaine Katherine, Lewis Nathan S., McKone James R., Shaner Matthew, Strandwitz Nicholas C.
Принадлежит:

This disclosure relates to photovoltaic and photoelectrosynthetic cells, devices, methods of making and using the same. 1. An elongated structure comprising a plurality of radially-integrated tandem junctions separated by a transparent low resistance layer , wherein a first junction comprises a first semiconductive material and at least a second junction comprises a second different or the same semiconducting material having a different or the same band gap compared to the first semiconductive material.2. The elongated structure of claim 1 , wherein the first junction and second junction are separated by a low resistance layer comprising a transparent conductive oxide.3. The elongated structure of claim 1 , wherein the low resistance layer comprises one or more of a material selected from the group consisting of TiO claim 1 , CaTiO claim 1 , SrTiO claim 1 , SrTiO claim 1 , SrTiO claim 1 , RbLaTiO claim 1 , CsLaTiO claim 1 , CsLaTiNbO claim 1 , LaTiO claim 1 , LaTiO claim 1 , LaTiO claim 1 , LaTiO:Ba claim 1 , KaLaZrTiO claim 1 , LaCaTiO claim 1 , KTiNbO claim 1 , NaTiO claim 1 , BaTiO claim 1 , GdTiO claim 1 , YTiO claim 1 , ZrO claim 1 , KNbO claim 1 , RbNbO claim 1 , CaNbO claim 1 , SrNbO claim 1 , BaNbO claim 1 , NaCaNbO claim 1 , ZnNbO claim 1 , CsNbO claim 1 , LaNbO claim 1 , TaO claim 1 , KsPrTaO claim 1 , KTaSiO claim 1 , KTaBO claim 1 , LiTaO claim 1 , KTaO claim 1 , AgTaO claim 1 , KTaO:Zr claim 1 , NaTaO:La claim 1 , NaTaO:Sr claim 1 , NaTaO claim 1 , CaTaO claim 1 , SrTaO claim 1 , NiTaO claim 1 , RbTaO claim 1 , CaTaO claim 1 , SrTaO. KSrTaO claim 1 , RbNdTaO claim 1 , HLaTaO claim 1 , KSrTaO claim 1 , LiCaTaO claim 1 , KBaTaO claim 1 , SrTaO claim 1 , BaTaO claim 1 , HSrBiTaO claim 1 , Mg—Ta Oxide claim 1 , LaTaO claim 1 , LaTaO claim 1 , PbWO claim 1 , RbWNbO claim 1 , RbWTaO claim 1 , CeO:Sr claim 1 , BaCeO claim 1 , NaInO claim 1 , CaInO claim 1 , SrInO claim 1 , LaInO claim 1 , YInO claim 1 , NaSbO claim 1 , CaSbO claim 1 , CaSbO claim 1 , SrSbO ...

Подробнее
Номер записи: 96
17-10-2013 дата публикации

CORE-SHELL NANOSTRUCTURE BASED PHOTOVOLTAIC CELLS AND METHODS OF MAKING SAME

Номер: US20130269762A1
Автор: Cui Jingbiao
Принадлежит: BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

A photovoltaic cell includes nanostructures formed of nanowires on a substrate, where the nanostructures include an array of three dimensional nanotrees or nanobushes with a core-shell structure having a core and one or more shells sequentially formed on the core. The core o f the core-shell structure is formed of a highly conductive metal or semiconductor, and the shell o f the core-shell structure is formed of a metal, semiconductor, or polymer, such that the core-shell structure has substantially large surface and interface area for photon energy harvesting and conversion into electricity. 1. A photovoltaic (PV) cell , comprising:nanostructures formed of nanowires on a substrate.2. The photovoltaic cell of claim 1 , wherein the nanostructures comprise three dimensional (3D) nanotrees or nanobushes.3. The photovoltaic cell of claim 2 , wherein each nanotree or nanobush has a plurality of branches and a plurality of subbranches grown from the plurality of braches.4. The photovoltaic cell of claim 3 , wherein each nanotree or nanobush has one or more trunks from which the plurality of branches grows.5. The photovoltaic cell of claim 4 , wherein all the one or more trunks claim 4 , the plurality of branches and the plurality of subbranches are formed with a core-shell structure.6. The photovoltaic cell of claim 5 , wherein the core-shell structure comprises a core and a shell formed on and covering the core.7. The photovoltaic cell of claim 6 , wherein the diameter of the core of the core-shell structure is around tens to hundreds nanometers claim 6 , and the thickness of the shell of the core-shell structure is about from a few nanometers to hundred nanometers.8. The photovoltaic cell of claim 6 , wherein the core and shell of the core-shell structure are formed of the same or different semiconductor or metal materials.9. The photovoltaic cell of claim 8 , wherein the core o f the core-shell structure is formed of a highly conductive metal or semiconductor claim 8 , ...

Подробнее
Номер записи: 97
17-10-2013 дата публикации

Electrical Device

Номер: US20130269763A1
Автор: Campion Richard, Cherns David, Foxon C. Thomas, Novikov Sergei
Принадлежит:

The invention provides an electrical device, e.g. a solar cell, comprising at least one sub-cell containing a plurality of InGaN nanocolumns or nanorods, wherein 0≦x≦1. 1. An apparatus comprising: {'sub': x', '1-x, 'a sub-cell comprising a plurality of InGaN nanocolumns, wherein 0≦x≦1.'}, 'a solar cell comprising2. The apparatus of claim 1 , wherein x≧0.1.3. The apparatus of claim 1 , wherein x≧0.4.4. The apparatus of claim 1 , further comprising:a plurality of the sub-cells; anda tunnel junction located between two adjacent sub-cells.5. The apparatus of claim 4 , wherein the sub-cells comprise a first sub-cell and a second sub-cell claim 4 , wherein the tunnel junction is positioned between the first sub-cell and the second sub-cell claim 4 , and wherein x for the nanocolumns in the first sub-cell is numerically different than x for the nanocolumns in the second sub-cell.6. The apparatus of claim 5 , further comprising a third sub-cell and a second tunnel junction positioned between the second sub-cell and the third sub-cell claim 5 , wherein x for the nanocolumns in the third sub-cell is numerically different than x for the nanocolumns in both the first sub-cell and the second sub-cell.7. The apparatus of claim 5 , wherein 0.4≦x≦0.5 for the nanocolumns in the first sub-cell claim 5 , and wherein 0.65≦x≦0.8 for the nanocolumns in the second sub-cell.8. The apparatus of claim 4 , wherein one of the tunnel junctions is present within a continuous layer.9. The apparatus of claim 1 , wherein the apparatus is a solar panel.10. The apparatus of claim 1 , wherein the apparatus is a solar concentrator.11. The apparatus of claim 1 , wherein the apparatus is a power plant.12. A method of manufacturing an electrical device comprising:growing a precursor layer on a substrate; and{'sub': x', '1-x', 'x', '1-x, 'growing a plurality of InGaN nanocolumns, a plurality of InGaN nanorods, or combinations thereof on the precursor layer, wherein 0≦x≦1.'}13. The method of claim 12 , ...

Подробнее
Номер записи: 98
17-10-2013 дата публикации

Manufacturing method of light emitting device having auto-cloning photonic crystal structures

Номер: US20130273681A1
Автор: Chen-Yang Huang, Hao-Min Ku, Shiuh Chao
Принадлежит: National Tsing Hua University NTHU

A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing method of the light emitting device having auto-cloning photonic crystal structures is presented here.

Подробнее
Номер записи: 99
24-10-2013 дата публикации

HIGH LEVEL INJECTION SYSTEMS

Номер: US20130276873A1
Автор: Atwater Harry A., Lewis Nathan S., Santori Elizabeth
Принадлежит:

A semiconductor device having elongated structure having high-level injection are provided, as well as making and using such devices. 1. A device comprising:a back contact layer;an ordered array of elongated intrinsic or lightly doped semiconductor structures, wherein the elongate structures have length dimensions defined by adjacent ends in electrical contact with at least portions of the back contact layer and distal ends not in contact with the back contact layer and have radial dimensions generally normal to the length dimensions and the radial dimensions are less than the length dimensions and wherein the diameters of the elongated structures are greater than 500 nm; andan axial or radial contact layer or medium, wherein at least some portions of the axial or radial contact layer or medium are in electrical contact with one or more elongate structures of the plurality of the elongate structures along at least portions of the length dimensions of the one or more elongate semiconductor structures, wherein the elongate structures absorb received light.2. The device according to claim 1 , wherein the radial dimensions are less than or equal to minority carrier diffusion lengths for material comprising the elongate semiconductor structures.3. The device of claim 1 , wherein the elongated structures comprise minority carrier lifetimes of greater than 1 μs.4. The device of claim 1 , wherein the elongated structures comprise diameters greater than 500 nm.5. The device of claim 1 , wherein the elongated structures comprise diameters of about 1.75 μm to 3 μm.6. The device of claim 1 , wherein the elongated structures' acceptor concentrations (Na) are ˜1×10to 10cm.7. The device of claim 1 , wherein the elongated structures' donor acceptor concentrations (Nd) are ˜1×10to 10cm8. The device of claim 1 , wherein when the back contact is an n-type contact the radial or axial contact is p-type.9. The device of claim 1 , wherein when the back contact is a p-type contact the ...

Подробнее
Номер записи: 100