ELEKTROLUMINESZENZDIODE, DIE SICHT AUS DER OBERFLÄCHE EMITTIERT

Optoelectronic component, in particular a laser diode or a light-emitting diode

A laser diode or a light-emitting diode has a semiconductor crystal doped with lanthanides (4f ions). As a result of doping InP, GaAs, GaP, Si and Ge with lanthanides, incoherent radiation can be produced in the case of a light-emitting diode and coherent radiation in the case of a laser diode. The wavelength of this radiation is longer than the energy gap of the host crystal and is primarily determined by the 4f ion (lanthanide) and not by the energy gap of the semiconductor. Doping with erbium yields an emission wavelength of 1.54 mu m for the semiconductor component and this corresponds approximately with the minimum attenuation wavelength of a glass fibre such as those used in glass-fibre communication. ...

Gas phase enhancement of emission color quality in solid state LEDs

LED package and manufacturing method therefor

Provided are a light-emitting diode (LED) package and a manufacturing method therefor. The LED package comprises: a first support frame (10), several LED components (20), a packaging adhesive (30), and a quantum strip (40). The first support frame (10) comprises a PCB (12) and four sidewalls (14). The four sidewalls (14) enclose an accommodating space (18). The several LED components (20) are mounted onto the PCB (12) and are electrically connected thereto. The packaging adhesive (30) is filled into the accommodating space (18). Mounting parts (16) are provided at upper ends of the four sidewalls (14). The quantum strip (40) is mounted onto the mounting parts (16). The quantum strip (40) is located above the packaging adhesive (30). The first support frame (10), the several LED components (20), and the quantum strip (40) are integrally packaged to be fixedly assembled together.

Semiconductor devices

A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region and means for transporting majority carriers in the first region to the third region.

Composant semi-conducteur, notamment transistor bipolaire à jonction hétérogène.

... a. Composant semi-conducteur, notamment transistor bipolaire à jonction hétérogène. b. Composant caractérisé en ce que la troisième région comporte au moins une partie du substrat qui est formée du même élément que le substrat et de l'oxygène, l'énergie de l'intervalle de bande de cette partie étant supérieure à celle de la seconde région, et un moyen étant prévu pour transporter les porteurs majoritaires de première région dans la troisième région ...

Light emitting diode

A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength of light emitted by the active layer is 222 nm 405 nm, and a defect density of the active layer is less than or equal to 5*1010/cm2. The first and second electrodes are respectively connected to the n-type and p-type semiconductor layers. A carrier for carrying a semiconductor layer is also provided.

Light-emitting device

Light emitting diode

SEMICONDUCTOR LIGHT EMITTING DEVICE

In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light ...

Optoelectronic device with modulation doping

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device

A light-emitting element which uses a plurality of kinds of light-emitting dopants emitting light in a balanced manner and has high emission efficiency is provided. Further, a light-emitting device, a display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. A light-emitting element which includes a plurality of light-emitting layers including different phosphorescent materials is provided. In the light-emitting element, the light-emitting layer which includes a light-emitting material emitting light with a long wavelength includes two kinds of carrier-transport compounds having properties of transporting carriers with different polarities. Further, in the light-emitting element, the triplet excitation energy of a host material included in the light-emitting layer emitting light with a short wavelength is higher than the triplet excitation energy of at least one of the carrier-transport compounds ...

CARRIER FOR A SEMICONDUCTOR LAYER

A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in which a depth of the recess ranges from 10 nm to 500 nm, and a dimension of the mesa ranges from 10 nm to 800 nm.

HALBLEITERBAUELEMENT

SEMICONDUCTOR DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE

Semiconductor light emitting device

In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light ...

SURFACE EMITTING LIGHT EMITTING DIODE___________________________

A surface emitting LED has a PN junction (6) between two semiconductor layers (2, 3), at least one layer (2) being an active layer. The diode is adapted for emitting light through an exit surface (7). Between the active layer (2) and the exit surface (7) the diode has a luminescence layer (L1) with a lower energy gap than that of the active layer.

PIXEL FOR MICRO DISPLAY AND METHOD OF MANUFACTURING THE SAME

Disclosed are a unit pixel of a microdisplay and a method of manufacturing the same. In the unit pixel, each of the sub-pixels forming blue, green, and red light is vertically stacked on the growth substrate. As a result, the area of a unit pixel may be reduced, and transfer processes may be facilitated.

Heterojunction semiconductor device

A layer of germanium on a body of P type conductivity single crystal indium phosphide provides a blocking heterojunction. This device will emit light when a suitable voltage is placed thereacross or the device can be used as a photoconductor to generate electrons when light is directed thereon.

STRUCTURE OF HIGH ELECTRON MOBILITY LIGHT EMITTING TRANSISTOR

A structure of high electron mobility light emitting transistor comprises a substrate, a HEMT region disposed on the substrate, and a gallium nitride LED (GaN-LED) region disposed on the substrate. A two-dimensional electron gas layer is present in each of the HEMI region and the LED region, and the HEMT region is coupled to the LED region through the two-dimensional electron gas layer.

Elektrolumineszente Halbleiterdiode fuer optische Sender oder Verstaerker

SEMICONDUCTOR DEVICE

A hetero-junction bipolar transistor or gate controlled switch which is formed generally of a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region there being transportation of majority carriers in the first region to the third region; wherein the device provides high current gain, superior switching characteristics, the concentration of current is prevented and wherein a method of forming an emitter having a low resistivity is provided.

나노구조 발광 소자

... 나노구조 발광 소자가 개시된다. 개시된 나노구조 발광 소자는 제1반도체층과, 상기 제1반도체층 상에 구비된 것으로, 나노코어, 상기 나노코어의 표면에 구비되는 활성층 및 제2반도체층을 포함하며 상부가 평탄화된 나노 구조체와, 상기 나노 구조체의 측면을 둘러싸는 도전층과, 상기 제1반도체층에 전기적으로 연결되는 제1전극; 및 상기 도전층에 전기적으로 연결되는 제2전극;을 포함한다.

Semiconductor device

A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region and means for transporting majority carriers in the first region to the third region.

Quasicrystalline structures and uses thereof

This invention relates generally to the field of quasicrystalline structures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical, mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for a pre-selected range of wavelengths propagating in multiple directions.

Light-emitting device and manufacturing method thereof

A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Semiconductor heterojunction structure

A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.

窒化物半導体層の形成方法

ИСТОЧНИК СВЕТА С КВАНТОВЫМИ ТОЧКАМИ

... 1. Люминесцентный материал (100) на основе люминесцентных наночастиц, содержащий матрицу (10) из взаимосвязанных люминесцентных наночастиц (20) с покрытием,- причем люминесцентные наночастицы (20) выбраны из группы, состоящей из полупроводниковых наночастиц, которые способны излучать в видимой части спектра;- причем люминесцентные наночастицы (20) содержат первое покрытие (25), содержащее материал первого покрытия (125), отличающийся от полупроводникового материала наночастиц; причем материал первого покрытия (125) выбран из группы, состоящей из соединений формулы M1-M2-M3-A, в которой M1 выбран из группы, состоящей из Na, Li, Mg, Cu, Ag и Au; причем M2 выбран из группы, состоящей из Zn и Cd; причем M3 выбран из группы, состоящей из Ga, As, In и Tl; причем A выбран из группы, состоящей из O, S, Se, As, P и Te; причем x находится в диапазоне 0-1; причем y находится в диапазоне 0-1; z находится в диапазоне 0-1; и причем по меньшей мере, один из x, y и z больше 0;- причем матрица (10) содержит ...

LED package and manufacturing method therefor

Provided are a light-emitting diode (LED) package and a manufacturing method therefor. The LED package comprises: a first support frame (10), several LED components (20), a packaging adhesive (30), and a quantum strip (40). The first support frame (10) comprises a PCB (12) and four sidewalls (14). The four sidewalls (14) enclose an accommodating space (18). The several LED components (20) are mounted onto the PCB (12) and are electrically connected thereto. The packaging adhesive (30) is filled into the accommodating space (18). Mounting parts (16) are provided at upper ends of the four sidewalls (14). The quantum strip (40) is mounted onto the mounting parts (16). The quantum strip (40) is located above the packaging adhesive (30). The first support frame (10), the several LED components (20), and the quantum strip (40) are integrally packaged to be fixedly assembled together.

HETEROGENEOUS SEMICONDUCTOR STRUCTURE WITH COMPOSITION GRADIENT AND METHOD FOR PRODUCING SAME

... 1523056 Semiconductor devices GOSUDARST N I I PROEKT INST REDKUMETALLICHE PROMYSHLEN GIREDMET 9 Aug 1976 33012/76 Heading H1K A heterogeneous structure, e.g. for use in lasers and photoelectric cells comprises a monocrystalline substrate, a main semiconductor layer consisting of a doped solid solution AB x C 1-x (0#x#1) of the binary compounds AB and AC, the value of x decreasing monotonically along an axis extending between opposite side surfaces of the layer, and disposed between the main layer and substrate a doped transition layer of the same solid solution through the thickness of which x varies from the value in the adjacent part of the main layer to a constant value adjacent the substrate providing the optimum lattice constant matching therewith. Such a structure is formed by a gas transport reaction or evaporation of the compounds to the substrate from a source consisting of parallel strips of discretely different compositions disposed parallel and in close proximity thereto. The ...

SEMICONDUCTOR DEVICES

SEMICONDUCTOR COMPONENT, IN PARTICULAR BIPOLAR TRANSISTOR HAS HETEROGENEOUS JUNCTION

ИСТОЧНИК СВЕТА С КВАНТОВЫМИ ТОЧКАМИ

Изобретение относится к люминесцентному материалу на основе люминесцентных наночастиц и к осветительному устройству на их основе для преобразования света от источника света. Предложенный люминесцентный материал содержит матрицу из взаимосвязанных люминесцентных наночастиц с покрытием. Например, люминесцентный материал на основе люминесцентных наночастиц, содержащих CdSe с покрытием из CdS, и содержащий матрицу с покрытием из ZnS, имеет квантовую эффективность по меньшей мере 80% при 25°C и гашение квантовой эффективности при 100°C, не превышающее 20% в сравнении с квантовой эффективностью при 25°C. 3 н. и 12 з.п. ф-лы, 7 ил., 2 табл., 1 пр.

Elektronisches Bauteil mit einer Halbleiter-Komposit-Struktur

Gas phase enhancement of emission color quality in solid state LEDs

ELECTROLUMINESCENT DEVICE

SEMICONDUCTING METAL SILICIDE RADIATION DETECTORS

SEMICONDUCTIVE METAL SILICIDE RADIATION DETECTORS AND SOURCE Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting rhenium disilicide detectors are efficient at wavelengths which mate with the transmission capabilities of certain optical fibers, thereby enhancing the combination of infrared detectors and optical fiber transmission previously known. The range of electromagnetic radiation sensed by these rhenium disilicide detectors include the infrared range of wavelengths up to 14 microns.

Solid transmitting radiation of the laser type

Semiconductor light emitting device

There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Colloidal nanocrystals and method of making

A tight confinement nanocrystal comprises a homogeneous center region having a first composition and a smoothly varying region having a second composition wherein a confining potential barrier monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous center region to an outer surface of the nanocrystal. A method of producing the nanocrystal comprises forming a first solution by combining a solvent and at most two nanocrystal precursors; heating the first solution to a nucleation temperature; adding to the first solution, a second solution having a solvent, at least one additional and different precursor to form the homogeneous center region and at most an initial portion of the smoothly varying region; and lowering the solution temperature to a growth temperature to complete growth of the smoothly varying region.

Nano-structured light-emitting device and methods for manufacturing the same

A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.

Electrode configuration for a light emitting diode

A light emitting device (10) according to the embodiment includes a light emitting structure having a first conductive semiconductor layer (11), an active layer (12) and a second conductive semiconductor layer (13); a plurality of first electrodes (80) disposed on the first conductive semiconductor layer; a second electrode (87) electrically connected to the second conductive semiconductor layer; a conductive support member (70) disposed under the second electrode; a plurality of first connection parts (90) electrically connecting the first electrodes to the conductive support member, respectively; and a second connection part (95) electrically connected to the second electrode, wherein the first electrodes are spaced apart from each other on a top surface of the first conductive semiconductor layer.

WIDE SURFACE LED

YTLYSANDE LYSDIOD

LIGHT-EMITTING DEVICE

A light emitting device disclosed herein comprises a substrate, a buffer stack formed on the substrate, a tunneling junction stack formed on the buffer stack comprising an un-doped layer, a light-emitting stack formed on the tunneling junction stack, and a contact stack formed on the light emitting stack. The structure of the light emitting device disclosed also reduce the energy band bending arisen from the lattice mismatch and improve the epitaxy quality of the stacks.

The light-emitting device

SEMICONDUCTOR COMPONENT, IN PARTICULAR BIPOLAR TRANSISTOR HAS HETEROGENEOUS JUNCTION

Led chip and method of manufacturing the same

ENGINEERED BAND GAPS

An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers. 126-. (canceled)27. A method of manufacturing an optoelectronic device , the method comprising:orienting a first lattice direction of a first semiconducting atomically thin layer relative to a second lattice direction of a second semiconducting atomically thin layer, wherein an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° of a Vicnal angle of the first and second semiconducting atomically thin layers,placing the first semiconducting atomically thin layers proximate to the second semiconducting atomically thin layer;placing a first charge carrier conductor in electrical communication with the first semiconducting atomically thin layer; andplacing a second charge carrier conductor in electrical communication with the second semiconducting atomically thin layer.28. The method of claim 27 , wherein the first semiconducting atomically thin layer and the second semiconducting atomically thin layer are ...

MANUFACTURE OF THIN FILM IN HETEROJUNCTION STRUCTURE UTILIZING V-GROOVE

PURPOSE: To provide a stainless, no-potential heterojunction thin film by remov ing an oxide film and a different kind of thin film from a V-groove part by using a selective dry etching method and then removing the remaining film of oxide. CONSTITUTION: On the surface of a single-crystal thin film 1, a pattern is formed which includes lines repeated at specific intervals. Then etching is carried out to form grooves (V-grooves), which are repeated at intervals corresponding to the line pattern and is sectioned into a V-shape on the surface of the single- crystal thin film 1. On this surface, a different kind of thin film 2 in a V-groove pattern, having a grating mismatched with the thin film 1 is grown. The majority or the whole of grating mismatching potential is locally distributed because of the presence of the V-grooves. On the different kind of thin film 2, an oxide film 3 is vapor-deposited. Then the oxide film 3 and the different kind of thin film 2 at the V-groove part where the ...

Lichtemittierende Vorrichtung

Die vorliegende Offenbarung stellt eine lichtemittierende Vorrichtung bereit. Die lichtemittierende Vorrichtung umfasst ein Substrat; einen Infrarotlicht (IR) ausstrahlenden lichtemittierenden Stapel auf dem Substrat; und eine zwischen dem Substrat und dem lichtemittierenden Stapel angeordnete Halbleiter-Fensterschicht, die Material der AlGaInP-Serie umfasst.

ELECTROLUMINESCENT DEVICE

Wide surface LED

TERAHERTZ ILLUMINATION SOURCE FOR TERAHERTZ IMAGING

There is described a terahertz illumination source for terahertz imaging. The terahertz illumination source generally has: a surface; a plurality of terahertz radiation emitting elements mounted to said surface; a plurality of individual beam shaping elements each being optically coupled to a respective one of said terahertz radiation emitting elements; a collective beam shaper optically coupled to at least some of said individual beam shaping elements; and a control signal generator communicatively coupled to said terahertz radiation emitting elements, said control signal generator supplying a plurality of control signals to said terahertz radiation emitting elements, including emitting a plurality of individual terahertz radiation beams being collected and redirected successively by said individual beam shaping elements and then by said collective beam shaper. In some embodiments, said individual terahertz illumination beams can form a terahertz illumination beam having a coherence property ...

MAGNETICALLY POLARIZED PHOTONIC DEVICE

A magnetically polarized photonic device is provided. The magnetically polarized photonic device (100) includes substrate (102), an annihilation layer (106) and a graded band gap layer (142). The annihilation layer (106) is deposed on a surface (104) of substrate (102) with graded band gap layer (142) disposed on annihilation layer (106). Contacts (1 16, 128) are disposed on ends (146, 150) of magnetically polarized photonic device (100). A magnetic field (159) is applied to graded band gap layer (142) and annihilation layer (106) to drive charges to contacts (1 16, 128).

OPTICAL DEVICE OF MULTI-WAVE BAND AND MANUFACTURING METHOD THEREOF

The present invention relates to an optical device of a multi-wavelength band and a manufacturing method thereof. It is possible to form an emission spectrum of multiple wavelengths due to a difference in the thickness of the barrier layer of an active layer caused by a growth difference in each etched side according to etching each side of an n-type semiconductor layer formed on the upper surface of a substrate with different polygonal shapes, to easily manufacture an optical device capable of forming an emission spectrum of multiple wavelengths, and to reduce manufacturing costs. The optical device includes an n electrode and a p electrode. COPYRIGHT KIPO 2017 (101) Form an n-type semiconductor layer on a substrate (103) Form an n-type semiconductor layer position mask layer (105) Perform dry etching on the n-type semiconductor layer (107) Form an active layer through lateral growth in nonpolar or semipolar for a surface c of a substrate (109) Form a p-type semiconductor layer through ...

YTLYSANDE LYSDIOD

QUASICRYSTALLINE STRUCTURES AND USES THEREOF

This invention relates generally to the field of quasicrystalline structures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical, mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for a pre-selected range of wavelengths propagating in multiple directions.

Dual mode tilted-charge devices and methods

A method for providing and operating a device in a first mode as a light-emitting transistor and in a second mode as a high speed electrical transistor, including the following steps: providing a semiconductor base region of a first conductivity type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, a quantum size region; providing, in the base region between the quantum size region and the collector region, a carrier transition region; applying a controllable bias voltage with respect to the base and collector regions to control depletion of carriers in at least the carrier transition region; and applying signals with respect to the emitter, base, and collector regions to operate the device as either a light-emitting transistor or a high speed electrical transistor, depending on the controlled bias signal.

Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

Magnetically polarized photonic device

A magnetically polarized photonic device is provided. The magnetically polarized photonic device (100) includes substrate (102), an annihilation layer (106) and a graded band gap layer (142). The annihilation layer (106) is deposed on a surface (104) of substrate (102) with graded band gap layer (142) disposed on annihilation layer (106). Contacts (1 16, 128) are disposed on ends (146, 150) of magnetically polarized photonic device (100). A magnetic field (159) is applied to graded band gap layer (142) and annihilation layer (106) to drive charges to contacts (1 16, 128).

METHOD FOR MANUFACTURING THIN FILM HAVING DUAL-LAYER STRUCTURE

PURPOSE: A method for manufacturing thin film having a dual-layer structure is provided to minimize stress effect and reduce potential density by using a V-shaped groove. CONSTITUTION: In a method for a manufacturing a thin film having a dual-layer structure, V-shaped grooves are first formed on a mono-crystal film(1) in a longitudinal or lateral direction, then a different thin film(2) is formed on the mono-crystal film(1). The different thin film(2) has also the V-shaped grooves. When forming the different thin film(2), when a thickness of the film(2) is less than a critical thickness, stress effect is eliminated through a heating process to provide a nonstress/nonpotential region. Next, an oxide layer(3) is deposited on the different thin film(2), and portions of the oxide layer and the different thin film that correspond to the V-shaped groove is removed. Finally, rest of the oxide layer is removed. COPYRIGHT 2000 KIPO ...

TRION-BASED LIGHT EMITTING TUNNEL DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR HETEROJUNCTION STRUCTURE

Semiconductor light emitting device

The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor ...

Ultraviolet semiconductor laser and method of manufacturing the same

Electroluminescent device

An electroluminescent device (10) comprises an electroluminescent layer (11) together with a p-type silicon layer (13) and an n-type silicon layer (14). The layers (11, 13, 14) constitute a heterojunction or transistor-like structure which limits the total device current during operation. This avoids current runaway experienced in prior art devices, and has been found to extend operating life. The electroluminescent layer may be in contact with a transition metal oxide layer to provide self-healing of pinholes. The electroluminescent device may include additional p-type and n-type silicon layers to provide a degree of current control. The p-type silicon layer may be connected to an ohmic contact for control of device current. The silicon layers (13, 14) are either crystalline or amorphous. ...

MAGNETICALLY POLARIZED PHOTONIC DEVICE

A magnetically polarized photonic device is provided. The magnetically polarized photonic device (100) includes substrate (102), an annihilation layer (106) and a graded band gap layer (142). The annihilation layer (106) is deposed on a surface (104) of substrate (102) with graded band gap layer (142) disposed on annihilation layer (106). Contacts (1 16, 128) are disposed on ends (146, 150) of magnetically polarized photonic device (100). A magnetic field (159) is applied to graded band gap layer (142) and annihilation layer (106) to drive charges to contacts (1 16, 128).

The light-emitting element, light-emitting device, display device, lighting device and electronic apparatus

Flexible LED device and method for manufacturing same

The present disclosure provides a flexible light emitting diode (LED) device and a method for manufacturing the same. The method includes providing a p-type silicon wafer as a base, and then performing an exposure and development process to form a patterned layer including a plurality of p-type silicon microcolumns on the base; filling a plurality of gaps among the p-type silicon microcolumns with a soft polymer resin to form a compound layer; sequentially forming an n-type doped metal oxide layer and a first metal electrode layer on the compound layer; and removing the base, forming a second metal electrode layer, and then entirely shifting a whole body including these layers onto a flexible substrate.

Gas Phase Enhancement of Emission Color Quality in Solid State LEDs

Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material.

Impact ionization light-emitting diodes

Embodiments disclose LEDs that operate using impact ionization. Devices include a first conductivity type layer, an intrinsic layer, and an impact ionization layer. In some embodiments, a charge layer is on the intrinsic layer, where the charge layer comprises a first material and has a net charge. The impact ionization layer comprises a second material. The charge layer forms a barrier for transporting carriers until a bias of at least 1.5 times a bandgap of the second material is applied, and a resulting electric field in the impact ionization layer is greater than or equal to a threshold for the second material. In some embodiments the first intrinsic layer is on the first conductivity type layer and is made of the first material, and a compositional step at an interface between the intrinsic layer and the impact ionization layer creates a barrier for transporting carriers.

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

Ultraviolett-Halbleiterlaser und Verfahren zur Herstellung desselben.

LED (LIGHT-EMITTING DIODE) ENCAPSULATION AND MANUFACTURING METHOD THEREOF

Light-emitting element

A light-emitting element includes a light-emitting stacked layer including an upper surface, wherein the upper surface includes a first flat region; a protective layer including a current blocking region on the first flat region; and a cap region on the upper surface, wherein the current blocking region is spatially separate from the cap region; and a first electrode covering the current blocking region.

COLLOIDAL NANOCRYSTALS AND METHOD OF MAKING

A tight confinement nanocrystal comprises a homogeneous center region having a first composition and a smoothly varying region having a second composition wherein a confining potential barrier monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous center region to an outer surface of the nanocrystal. A method of producing the nanocrystal comprises forming a first solution by combining a solvent and at most two nanocrystal precursors; heating the first solution to a nucleation temperature; adding to the first solution, a second solution having a solvent, at least one additional and different precursor to form the homogeneous center region and at most an initial portion of the smoothly varying region; and lowering the solution temperature to a growth temperature to complete growth of the smoothly varying region.

Monolithically integrated transmitter device

In a monolithically integrated transmitter device comprising an invertedly coated laser or LED (light-emitting diode) and an HEMT (high electron mobility transistor), the p-doped semiconductor layers of the light-emitting semiconductor structure of the optical transmitter have, in the HEMT, the function of the p-type gate for controlling the two-dimensional electron gas. The monolithically integrated transmitter device is suitable for wavelengths ranging from 0.8 mu m to 1.6 mu m.

Gas phase enhancement of emission color quality in solid state LEDs

Light-emitting materials are made from a porous light-emitting semiconductor e.g. GaN, AlGaAs, AlGaInP or AlGaInN, having quantum dots (QDs) disposed within the pores. The QDs e.g. CdS, CdSe, ZnS, ZnSe etc.may have diameters that are essentially equal in size to the width of the pores. Also shown in the method where QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and re-emit light at a longer wavelength than the absorbed light, thereby down-converting light from the semiconductor material. Also shown is a light-emitting device comprising the material.

Light emitting diode

A wide surface LED utilises the full area of a major component surface, instead of emitting visible light from a small area of a pn junction. The top surface of the wide surface LED is made out of a mixture of Gallium arsenide and silica and cadmium phosphor, the result being that the full area of the PN junction produces light in far greater quantities than conventional LEDS. The P type substrate is made out of gallium arsenide. ...

LIGHT SOURCE WITH QUANTUM DOTS

Optoelectronic device with modulation doping

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

LIGHT-EMITTING DEVICE

The present disclosure provides a light-emitting device. The light-emitting device comprises a substrate; a light-emitting stack which emits infrared (IR) light on the substrate; and a semiconductor window layer comprising AlGaInP series material disposed between the substrate and the light-emitting stack.

Quasicrystalline Structures And Uses Thereof

This invention relates generally to the field of quasicrystalline structures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical. mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for a pre-selected range of wavelengths propagating in multiple directions.

Light-emitting device

The present disclosure provides a light-emitting device. The light-emitting device comprises a substrate; a light-emitting stack which emits infrared (IR) light on the substrate; and a semiconductor window layer comprising AlGaInP series material disposed between the substrate and the light-emitting stack.

Solid state radiation emitters

... A radiation emitter operable at ambient temperature comprises a heterojunction between a base region of low energy gap semi-conductor material and a more heavily doped carrier injection region of higher energy gap material. The efficiency of radiative recombination of injected carrier is improved if the lattice constants of the two materials match to within 1%. A typical device, Fig. 2, is made by dipping a lightly doped germanium wafer in a solution of gallium arsenide in gallium at 600 DEG C. and withdrawing it when a 5-20 m layer of the arsenide has grown on it. The solution may contain tin to make the layer more heavily N type. Subsequently one face of the water is exposed to vapour from an indium zinc alloy to convert the layer 12 to P type leaving the other 14 of N type. In another method a pair of germanium wafers are placed back to back in gallium arsenide solution with the edges coated with graphite to avoid wetting to form N layers on the exposed faces.

LED package and manufacturing method therefor

나노구조 하이브리드 입자 및 그 제조방법, 그리고 상기 입자를 포함하는 장치

... 나노구조 하이브리드 입자 및 그 제조방법, 그리고 상기 입자를 포함하는 장치가 개시된다. 상기 나노구조 하이브리드 입자는, 표면에 요철 구조의 나노패턴이 형성된 소수성의 기저 입자; 및 상기 기저 입자 표면의 요철 구조의 오목한 부분에 배치된 소수성의 발광 나노입자; 및 상기 기저 입자와 발광 나노입자를 덮어주는 고팅층을 포함한다. 상기 나노구조 하이브리드 입자는 3차원의 모든 방향으로 광추출이 일어날 수 있으므로, 2차원 평면에서보다 더 높은 광추출 효율을 나타낼 수 있다.

Resistive memory element

A resistive memory element is provided. The resistive memory element includes a P-type layer; a tunneling structure formed on the P-type layer; and an N-type layer formed on the tunneling structure. When a bias voltage applied between the P-type layer and the N-type layer is higher than a reset voltage, the resistive memory element is in a reset state. When the bias voltage applied between the P-type layer and the N-type layer is lower than a set voltage, the resistive memory element is in a set state.

Light emitting device for light amplification using graphene quantum dot and method for producing the device

The present invention relates to a light-emitting device for light amplification using graphene quantum dots and a method of manufacturing the same, which includes a first conductive semiconductor base layer; a plurality of nanowires disposed on the first conductive semiconductor base layer and including a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer sequentially formed from inside to outside; and a graphene quantum dot coating layer disposed on one or both of a surface and an interior of the nanowire, thereby providing a light-emitting device which maximizes light extraction and light amplification.

Light-responsive LED based on GaN/CsPbBrxI3-x heterojunction, and preparation method and application thereof

A light-responsive LED (Light Emitting Diode) based on a GaN/CsPbBrxI3-x heterojunction, a preparation method and an application thereof are provided. The light-responsive LED consists of a GaN base layer on a sapphire substrate, an all-inorganic perovskite CsPbBrxI3-x film, an indium electrode and a carbon electrode, forming an In/GaN/CsPbBrxI3-x/C structure, wherein: in the CsPbBrxI3-x film, 0 Подробнее

Space charge trap-assisted recombination suppressing layer for low-voltage diode operation

Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration niat locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as niaround the depletion region decreases, so decreasing the effective niin this manner is a way to decrease SRH recombination.

SEMICONDUCTOR LIGHT EMITTING DEVICE CAPABLE OF INCREASING THE HEAT DISCHARGE EFFICIENCY OF A HEAT SINK

PURPOSE: A semiconductor light emitting device is provided to improve external light extraction efficiency by positioning a first fluorescent layer containing a fluorescent substance emitting red light near a UV light emitting diode chip. CONSTITUTION: A first conductive semiconductor layer, an active layer(160), and a second conductive semiconductor layer are successively formed on a conductive substrate(110). A conductive via passes through the first conductive semiconductor layer and the active layer and is connected to the second conductive semiconductor layer. An electrical connection unit is extended from the conductive via and is exposed to the outside of the light emitting structure. An insulator separates a second conductive electrode from the conductive substrate, the first conductive semiconductor layer, and the active layer. A passivation layer covers the side of the active layer in the light emitting structure. COPYRIGHT KIPO 2010 ...

Zn(Ge,Sn)N2 FOR GREEN-AMBER LEDS

Disclosed herein are methods for making Zn(Ge,Sn)Nfor green-amber LEDs. Disclosed herein are compositions comprising Zn(Ge,Sn)Nuseful for green-amber LEDs. 1. A light emitting diode (LED) comprising at least a layer of a group II-group IV-Nsemiconductor alloy.2. The LED of wherein the group II element is selected from the group consisting of Zn claim 1 , Mg or Cd.3. The LED of wherein the group IV element is selected from the group consisting of Si claim 1 , Ge claim 1 , or Sn.4. The LED of capable of emitting light at a wavelength of less than 400 nm.5. The LED of capable of emitting light at a wavelength of greater than 700 nm.6. The LED of capable of emitting light at a wavelength from about 400 nm to about 700 nm.7. The LED of capable of emitting light at a wavelength from about 530 nm to about 590 nm.8. The LED of capable of emitting light at a wavelength from about 530 nm to about 550 nm.9. The LED of comprising ZnGeSnN.10. The LED of wherein the wavelength of emitted light changes as the value of x varies from 0 to 1.11. The LED of wherein the wavelength of emitted light changes as the amount of cation disorder in the ZnGeSnNlayer changes.12. The LED of exhibiting a luminous efficacy of up to 325 lm/W.13. The LED of wherein the ZnGeSnNlayer is lattice matched within two percent to at least one GaN layer.14. The LED of wherein the ZnGeSnNlayer is lattice matched within two percent to at least one InGaN layer.15. The LED of comprising GaN/ZnGeSnN/GaN device architecture.16. A method of making a LED comprising at least a layer of a group II-group IV-Nsemiconductor alloy wherein the method uses MOVCD claim 13 , HVPE claim 13 , ALD claim 13 , or PLD.17. The method of wherein the LED further comprises a substrate upon which the at least a layer of a group II-group IV-Nsemiconductor alloy is grown upon.18. The method of wherein the substrate is AlO.19. The method of wherein the substrate is GaN.20. The method of wherein the substrate is AlN. This application claims ...

Light emitting device

A light-emitting device is disclosed, comprising a substrate; a light-emitting structure on the substrate comprising a first region and a second region; a barrier layer on the first region having a bottom surface and a sidewall, wherein an angle between the sidewall and the bottom surface is between 10°70°; and a transparent conductive layer formed on the light-emitting structure and the barrier layer; wherein a difference between a thickness of the transparent conductive layer at the sidewall on the barrier layer and a thickness of the transparent conductive layer on the second region of the light-emitting structure forms a ratio not larger than 10 %.

LIGHT EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING THE SAME

A light emitting element includes a first electrode, a second electrode overlapping the first electrode, and an emission layer between the first electrode and the second electrode, the emission layer including quantum dots. The quantum dots include a core and a shell. Each of the core and the shell includes at least two selected from Mg, Zn, Te, Se, and S. When the quantum dots include Mg, a content of Mg in the shell is greater than a content of Mg in the core.

Semiconductor light emitting device and wafer

A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing Al x Ga 1-x-y In y N (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing Al x Ga 1-x-y In y N (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of Al x Ga 1-x-y In y N (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.

Light emitting diode and method of fabrication thereof

A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.

SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER

A semiconductor light emitting device includes a first layer including at least one of n-type GaN and n-type AlGaN; a second layer including Mg-containing p-type AlGaN; and a light emitting section provided between the first and second layers. The light emitting section includes barrier layers of Si-containing AlGaInN (0≦x, 0≦y, x+y≦1), and a well layer provided between the barrier layers and made of GaInN or AlGaInN. The barrier layers have a nearest barrier layer nearest to the second layer among the barrier layers and a far barrier layer. The nearest barrier layer includes a first portion made of Si-containing AlGaInN (0≦x, 0≦y, x+y≦1), and a second portion provided between the first portion and the second layer and made of AlGaInN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than those in the first portion and in the far barrier layer. 121.-. (canceled)22. A semiconductor light emitting device comprising:a first layer made of at least one of n-type GaN and n-type AlGaN;{'sup': 18', '−3', '19', '−3, 'a second layer made of Mg-containing p-type AlGaN, a Mg concentration in the second layer being 8×10cmor more and 3×10cmor less; and'}a light emitting section provided between the first layer and the second layer, [{'sub': x', '1-x-y', 'y, 'a plurality of barrier layers made of Si-containing AlGaInN (0≦x, 0≦y, x+y≦1), x being 0.06 or more and 0.08 or less, y being 0.003 or more and 0.01 or less, and'}, 'a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN,', a nearest barrier layer nearest to the second layer among the plurality of barrier layers, and', {'sup': 19', '−3', '19', '−3, 'a far barrier layer, a Si concentration in the far barrier layer being 1.1×10cmor more and 3×10cmor less,'}], 'the plurality of barrier layers having'}, [{'sub': x', '1-x-y', 'y, 'sup': 19', '−3', '19', '−3, 'a first portion made of Si-containing AlGaInN (0≦x, 0≦y, x+y≦1), the first portion being in contact with ...

Optical Tilted Charge Devices And Methods

A method for making an optical tilted-charge device that is substantially matched to GaAs lattice constant, including the following steps: providing a layered semiconductor structure that includes: a GaAs substrate; a semiconductor collector region; a semiconductor base region that includes a doped GaAs second base sub-region, an InGaAsN quantum size region, and a doped GaAs first base sub-region; and a semiconductor emitter region; and providing collector, base, and emitter electrodes respectively coupled with the collector region, the base region, and the emitter region. Electrical signals, applied with respect to the collector, base, and emitter electrodes, produces light emission from the base region. 1. A method for making an optical tilted-charge device that is substantially matched to GaAs lattice constant , comprising the steps of:providing a layered semiconductor structure that includes: a GaAs substrate; a semiconductor collector region; a semiconductor base region that includes a doped GaAs second base sub-region, an InGaAsN quantum size region, and a doped GaAs first base sub-region; and a semiconductor emitter region; andproviding collector, base, and emitter electrodes respectively coupled with said collector region, said base region, and said emitter region.2. The method as defined by claim 1 , further comprising the step of applying electrical signals with respect to said collector claim 1 , base claim 1 , and emitter electrodes to produce light emission from said base region.3. The method as defined by claim 1 , wherein said step of providing said collector and emitter regions comprises providing said regions as substantially GaAs.4. The method as defined by claim 1 , wherein said step of providing said second and first base sub-regions comprises providing said second and first base sub-regions as being heavily doped p-type.5. The method as defined by claim 1 , wherein said step of providing said InGaAsN quantum size region comprises providing an ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device is provided and includes an n-type semiconductor layer, a p-type semiconductor layer having a structure in which first and second doping regions including p-type impurities provided in different doping concentrations are alternately disposed one or more times; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the p-type semiconductor layer includes at least one interface between the first and second doping regions to prevent diffusion of p-type impurities. 1. A semiconductor light emitting device , comprising:an n-type semiconductor layer;a p-type semiconductor layer having a structure in which first and second doping regions including p-type impurities having different doping concentrations are alternately disposed one or more times; andan active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer,the p-type semiconductor layer including at least one interface between the first and second doping regions, the at least one interface being doped with n-type impurities.2. The semiconductor light emitting device of claim 1 , wherein the first doping region has a higher doping concentration of p-type impurities than the second doping region.3. The semiconductor light emitting device of claim 2 , wherein the first doping region has a higher bandgap energy than the second doping region.4. The semiconductor light emitting device of claim 3 , wherein:{'sub': x', 'y', '1-x-y, 'the first doping region includes a region formed of AlInGaN (0 Подробнее

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlInGaN (0≦x<1, 0 Подробнее

DOPED DIAMOND LED DEVICES AND ASSOCIATED METHODS

LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode. 1. An LED device , comprising:a conductive diamond layer;a SiC layer coupled to the diamond layer;a plurality of semiconductor layers, at least one of which is coupled to the SiC layer; andan electrode coupled to at least one of the plurality of semiconductor layers.2. The device of claim 1 , wherein the plurality of semiconductor layers is arranged in series between the conductive diamond layer and the electrode.3. The device of claim 1 , further comprising a light reflective layer coupled to the conductive diamond layer on a surface that is opposite the SiC layer.4. The device of claim 1 , wherein the SiC layer is a single crystal SiC layer.5. The device of claim 4 , wherein the SiC layer has a crystal lattice that is substantially epitaxially matched to the conductive diamond layer.6. The device of claim 4 , wherein the SiC layer has a crystal lattice that is substantially epitaxially matched to at least one of the semiconductor layers.7. The device of claim 1 , further comprising a diamond substrate coupled to the plurality of semiconductor layers opposite to the conductive diamond layer.8. The device of claim 7 , further comprising a reflective layer coupled to the diamond substrate and ...

Light emitting component and light emitting device using same

A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF

A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack. 1. A light-emitting diode structure , comprising:a substrate;a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer;a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; anda second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer,wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.2. A light-emitting diode structure according to claim 1 , further comprises a first electrical conducting layer connecting the first electrical pad and the first semiconductor layer.3. A light-emitting diode ...

LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME

A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlInGa)Owhere 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type. 1. A light emitting element , comprising:{'sub': 2', '3, 'a GaOsystem substrate; and'}a pn-junction formed on the substrate,wherein the pn-junction comprises a first GaN system compound semiconductor thin film of a first conductivity type formed on the substrate of the first conductivity type and a second GaN system compound semiconductor thin film of a second conductivity type formed on the GaN system compound semiconductor thin film, the second conductivity type being opposite to the first conductivity type, and the substrate is transmissive to light of visible to ultraviolet region.2. The light emitting element according to claim 1 , wherein the first GaN system compound semiconductor thin film of the first conductivity type comprises a GaN system compound semiconductor thin film of the first conductivity type having a first predetermined bandgap energy and a GaN system compound semiconductor thin film of the first conductivity type having a second predetermined bandgap energy smaller than the first predetermined bandgap energy claim 1 , and the second GaN system compound semiconductor thin film of the second conductivity type has a third predetermined bandgap energy.3. The light emitting element according to claim 1 , wherein the GaOsystem substrate comprises a substrate of (AlInGa)O claim 1 , where 0 Подробнее

Semiconductor light emitting device and manufacturing method of the same

According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.

Light emitting diode and method for manufacturing the same

A light emitting device includes a substrate having a top surface and an bottom surface and a light emitting structure on the substrate, disposed closer to the substrate top surface than the substrate bottom surface, having an n-type conductive type semiconductor layer, a p-type conductive type semiconductor layer, and an active layer. The light emitting device also includes a transparent electrode layer, a first electrode, and a second electrode. The substrate has side surfaces extending from the substrate bottom surface to the substrate top surface, the side surfaces inclined outwardly as the substrate extends in a direction from the substrate bottom surface to the substrate top surface. The transparent electrode layer overlaps more than 50% of a total area of the substrate bottom surface, and a part of light generated by the light emitting structure is emitted to outside via the transparent electrode layer.

Quasicrystalline structures and uses thereof

This invention relates generally to the field of quasicrystalline structures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical, mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for pre-selected range of wavelengths propagating in multiple directions.

STACKED LAYERS OF NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer. 1. A method for manufacturing a semiconductor light emitting device , comprising:forming a plurality of protrusions on a major surface of a substrate, the substrate not including a nitride semiconductor;forming a single crystal layer directly on the major surface of the substrate to cover the protrusions and to cause a crack in the single crystal layer; andforming a nitride semiconductor layer on the single crystal layer,the plurality of the protrusions being formed in a planar pattern,the protrusions extending in a prescribed crystal orientation of the substrate, and extending in a plurality of directions equivalent to the prescribed crystal orientation.2. The method of claim 1 , whereinthe crack exists on a boundary between a top surface of the protrusion and a tilted side surface of the protrusion, or a boundary between the major surface of the substrate and the tilted side surface of the protrusion.3. The method of claim 1 , whereinthe crack exists on at least one of a top portion of a side surface of the protrusion and lower portion of the side surface of the protrusion.4. The method of claim 1 , whereinthe plurality of the protrusions are formed in a stripe pattern, and the crack extend along the one of the protrusions.5. The method of claim 1 , whereinthe substrate is a sapphire substrate or a silicon substrate.6. A method for manufacturing a semiconductor light emitting device claim 1 , comprising:forming a plurality of protrusions on a major surface of a substrate, the substrate not including a nitride ...

LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND ILLUMINATION SYSTEM

A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer. 1. A light emitting device , comprising:a first semiconductor layer;a plurality of convex structures disposed on a top surface of the first semiconductor layer;a first uneven layer on a top surface of the plurality of convex structures;a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; anda light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer,wherein the nonconductive layer is formed in an uneven layer and includes a contact portion contacted directly with the top surface of the plurality of convex structures,wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer,wherein the first uneven layer is formed of a different material from the plurality of convex structures.2. The light emitting device according to claim 1 , wherein the plurality of convex structures are formed of a III-V compound semiconductor.3. The light emitting device according to claim 1 , wherein the plurality of convex structures are disposed in a discontinuous structure on the top surface of the first semiconductor layer.4. The light emitting device according to claim 1 , wherein the nonconductive layer is disposed between the ...

Dual Mode Tilted-Charge Devices And Methods

A method for providing and operating a device in a first mode as a light-emitting transistor and in a second mode as a high speed electrical transistor, including the following steps: providing a semiconductor base region of a first conductivity type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, a quantum size region; providing, in the base region between the quantum size region and the collector region, a carrier transition region; applying a controllable bias voltage with respect to the base and collector regions to control depletion of carriers in at least the carrier transition region; and applying signals with respect to the emitter, base, and collector regions to operate the device as either a light-emitting transistor or a high speed electrical transistor, depending on the controlled bias signal. 1. A method for providing and operating a device in a first mode as a light-emitting transistor and in a second mode as a high speed electrical transistor , comprising the steps of:providing a semiconductor base region of a first conductivity type between semiconductor emitter and collector regions of a second semiconductor type;providing, in said base region, a quantum size region;providing, in said base region between said quantum size region and said collector region, a carrier transition region;applying a controllable bias voltage with respect to said base and collector regions to control depletion of carriers in at least said carrier transition region; andapplying signals with respect to said emitter, base, and collector regions to operate said device as either a light-emitting transistor or a high speed electrical transistor, depending on said controlled bias signal.2. The method as defined by claim 1 , wherein said step of applying said controllable bias signal comprises applying a controllable bias voltage across the junction of said base and collector regions.3. The method as defined by ...

Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device

A light-emitting element which uses a plurality of kinds of light-emitting dopants emitting light in a balanced manner and has high emission efficiency is provided. Further, a light-emitting device, a display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. A light-emitting element which includes a plurality of light-emitting layers including different phosphorescent materials is provided. In the light-emitting element, the light-emitting layer which includes a light-emitting material emitting light with a long wavelength includes two kinds of carrier-transport compounds having properties of transporting carriers with different polarities. Further, in the light-emitting element, the triplet excitation energy of a host material included in the light-emitting layer emitting light with a short wavelength is higher than the triplet excitation energy of at least one of the carrier-transport compounds. 1. A light-emitting device comprising:a first light-emitting layer between an anode and a cathode, the first light-emitting layer comprising a first phosphorescent compound and a first host material; anda second light-emitting layer in contact with the first light-emitting layer, the second light-emitting layer comprising a second phosphorescent compound, a first electron-transport compound, and a first hole-transport compound,wherein an emission wavelength of the second phosphorescent compound is longer than an emission wavelength of the first phosphorescent compound, andwherein a triplet excitation energy of the first host material is higher than or equal to a triplet excitation energy of the first electron-transport compound or the first hole-transport compound.2. The light-emitting device according to claim 1 , wherein the first electron-transport compound and the first hole-transport compound form an exciplex.3. The light-emitting device according to claim 1 ,wherein the ...

Semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

Method of fabricating vertical structure leds

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

VERTICAL LIGHT-EMITTING DEVICES HAVING PATTERNED EMITTING UNIT AND METHODS OF MANUFACTURING THE SAME

Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer. 1. A method of manufacturing a light-emitting device , the method comprising:stacking a buffer layer and a semiconductor layer on a plurality of protrusions formed in an array pattern, wherein the plurality of protrusions are formed on a first substrate;filling a trench between the plurality of protrusions with an insulating layer up to a height of the semiconductor layer;stacking a first electrode layer to cover the semiconductor layer and the insulating layer on the semiconductor layer, and a bonding metal layer;bonding a second substrate on the bonding metal layer;removing the first substrate and the buffer layer; andforming a second electrode on the insulating layer to contact the semiconductor layer.2. The method of claim 1 , further comprising:forming a transparent electrode layer between the semiconductor layer and the second electrode.3. The method of claim 1 , wherein stacking of the buffer layer and the semiconductor layer comprises:forming the plurality of protrusions in the pattern array by patterning the first substrate; andsequentially stacking the buffer layer and the semiconductor layer on the plurality of protrusions.4. The method of claim 1 , wherein stacking of the buffer layer and the semiconductor layer comprises:sequentially stacking the buffer layer and the semiconductor layer on the first substrate; andsequentially patterning the semiconductor layer, the buffer layer, and a surface of the first substrate.5. A method of manufacturing a ...

Nitride semiconductor

To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 μm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness.

Semiconductor light-emitting device

An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The first conductivity type layer is provided between the insulating layer and the emission layer and has bandgap energy larger than that of the emission layer. The second conductivity type layer is provided on the emission layer and has a current diffusion layer and a second contact layer. The second contact layer is not superimposed on the opening of the insulating layer, and a thickness of the current diffusion layer is larger than that of the first contact layer. The second electrode has a pad portion and a thin portion extends from the pad portion onto the second contact layer.

SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER

According to one embodiment, a semiconductor device includes a functional layer of a nitride semiconductor. The functional layer is provided on a nitride semiconductor layer including a first stacked multilayer structure provided on a substrate. The first stacked multilayer structure includes a first lower layer, a first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness. 1. A semiconductor device comprising a functional layer of a nitride semiconductor , the functional layer being provided on a nitride semiconductor layer including a first stacked multilayer structure , the first stacked multilayer structure being provided on a major surface of a substrate , a first lower layer of a nitride semiconductor containing Si with a first concentration and having a first thickness;', 'a first intermediate layer of a nitride semiconductor provided on the first lower layer to be in contact with the first lower layer, containing Si with a second concentration lower than the first concentration, and having a second thickness thicker than the first thickness; and', 'a first upper layer of a nitride semiconductor provided on the first intermediate layer to be in contact with the first intermediate layer, containing Si with a third concentration lower than the second concentration, and having a third thickness., 'the first stacked multilayer structure including2. The device according to claim 1 , wherein a dislocation density in the ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

ELECTRONIC DEVICES WITH YIELDING SUBSTRATES

In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts. 162-. (canceled)63. An electronic device comprising:a light-emitting diode (LED) having first and second spaced-apart contacts; anda flexible substrate having first and second conductive traces on a first surface thereof, the first and second conductive traces being separated on the substrate by a gap therebetween,wherein the first and second contacts are adhered to and in electrical contact with, respectively, the first and second conductive traces with an adhesive material without electrically bridging the traces or the contacts.64. The electronic device of claim 63 , wherein the substrate comprises a local flexing or a local deformation for maintaining electrical contact between the contacts and traces during operation of the LED.65. The electronic device of claim 63 , wherein the first and second spaced-apart contacts are disposed on a first surface of the LED claim 63 , and further comprising a reflective material over at least a portion of the first surface of the LED.66. The electronic device of claim 63 , wherein the first and second spaced-apart contacts are substantially coplanar.67. The electronic device of claim 63 , wherein the first and second spaced-apart contacts are non-coplanar and the first and second contacts are adhered to and in electrical contact with claim 63 , respectively claim 63 , the first and second conductive traces notwithstanding the non-coplanarity of the first and second contacts.68. The electronic device of claim 63 , wherein the LED comprises a semiconductor material comprising at least one of GaN claim 63 , AlN claim 63 , InN claim 63 , or an alloy or mixture thereof.69. The electronic device of claim 63 , wherein the adhesive material comprises a pressure-activated ...

RESONANT OPTICAL CAVITY LIGHT EMITTING DEVICE

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The reflector may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·λ/n. K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength. 1. A resonant optical cavity light emitting device comprising:a substrate that is optically transparent to a target emission deep ultraviolet wavelength (target wavelength);a first spacer region directly coupled to the substrate, the first spacer region being non-absorbing to the target wavelength, wherein at least a portion of the first spacer region comprises a first electrical polarity;a light emitting region on the first spacer region, the light emitting region being configured to emit the target wavelength;a second spacer region on the light emitting region, the second spacer region being non-absorbing to the target wavelength, wherein at least a portion of the second spacer region comprises a second electrical polarity opposite of the first electrical polarity; anda reflector coupled to the second spacer region, the reflector comprising a distributed Bragg reflector (DBR) that is reflective of the target wavelength, and wherein the reflector comprises aluminum-oxy-nitride, aluminum oxide, or magnesium fluoride;wherein the light emitting region is positioned at a separation distance from the reflector; andwherein the resonant optical cavity light emitting device has an optical cavity between the reflector and a first ...

Semiconductor Heterostructure with Stress Management

A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Multi-Layered Contact to Semiconductor Structure

A multi-layered contact to a semiconductor structure and a method of making is described. In one embodiment, the contact includes a discontinuous Chromium layer formed over the semiconductor structure. A discontinuous Titanium layer is formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some of the discontinuous sections of the Chromium layer. A discontinuous Aluminum layer is formed directly on the Chromium layer, wherein portions of the Aluminum layer extend into at least some of the discontinuous sections of the Titanium layer and the Chromium layer. 1. A device , comprising:a semiconductor structure; a discontinuous Chromium layer formed over the semiconductor structure;', 'a discontinuous Titanium layer formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some discontinuous sections of the Chromium layer; and', 'a discontinuous Aluminum layer formed directly on the Titanium layer, wherein portions of the Aluminum layer extend into at least some discontinuous sections of the Titanium layer and the Chromium layer., 'a contact to the semiconductor structure, comprising2. The device of claim 1 , wherein at least some portions of the Aluminum layer extend only into some discontinuous sections of the Titanium layer and other portions of the Aluminum layer extend into at least some discontinuous sections of both the Titanium layer and the Chromium layer.3. The device of claim 1 , further comprising an ultraviolet transparent material formed in at least some discontinuous sections of the Aluminum layer.4. The device of claim 3 , wherein the ultraviolet transparent material interpenetrates into at least some discontinuous sections of the Titanium layer and the Chromium layer.5. The device of claim 4 , wherein at least some portions of the ultraviolet transparent material interpenetrate only to at least some discontinuous sections of the Titanium layer and other portions of the ...

Method for producing a conversion element, conversion element, and radiation-emitting component

A method for producing a conversion element comprising the following steps is described: providing a conversion layer having a matrix, in which phosphor particles are brought in, the phosphor particles comprising a host lattice having activator ions and being concentrated in a enrichment zone, providing a compensation layer having the matrix, in which compensation particles are brought in, which comprise the host lattice and are concentrated in a enrichment zone, and joining the conversion layer and the compensation layer in such a way that the enrichment zone of the conversion layer and the enrichment zone of the compensation layer are arranged symmetrically to one another with respect to a symmetry plane of the conversion element conversion element and a component are also specified.

Light emitting device

Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

A nitride semiconductor deep ultraviolet light emitting device having a superior light emission efficiency is provided. A nitride semiconductor light emitting device having emission wavelength of 200 to 300 nm includes an n-type layer consisting of a single layer or a plurality of layers having different band gaps, a p-type layer consisting of a single layer or a plurality of layers having different band gaps, an active layer arranged between the n-type layer and the p-type layer, and an electron blocking layer having a band gap larger than any band gap of layers composing the active layer and the p-type layer. The p-type layer includes a first p-type layer having a band gap larger than a band gap of a first n-type layer which has a smallest band gap in the n-type layer. The electron blocking layer is arranged between the active layer and the first p-type layer. 1. A nitride semiconductor light emitting device having emission wavelength of 200 to 300 nm , comprising:an n-type layer consisting of a single layer or a plurality of layers having different band gaps;a p-type layer consisting of a single layer or a plurality of layers having different band gaps;an active layer arranged between the n-type layer and the p-type layer; andan electron blocking layer having a band gap larger than any band gap of layers composing the active layer and the p-type layer,wherein the p-type layer comprises a first p-type layer having a band gap larger than a band gap of a first n-type layer which has a smallest band gap in the n-type layer; andthe electron blocking layer is arranged between the active layer and the first p-type layer.2. The nitride semiconductor light emitting device according to claim 1 ,wherein the p-type layer consists of the plurality of layers having different band gaps.3. The nitride semiconductor light emitting device according to claim 1 ,wherein the active layer comprises a well layer and a barrier layer;the p-type layer comprises a p-type cladding layer and ...

Bi-directional dual-color light emitting device and systems for use thereof

An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation. 1. A two-terminal light emitting semiconductor device producing a light of two different wavelengths depending on a polarity of an applied electric bias , comprising two active regions with efficient radiative carrier recombination , each of the said active regions sandwiched between two carrier supply regions of different carrier types , the said active regions sharing one of the carrier supply regions and conducting electric current at both polarities of the electric bias.2. A semiconductor device of where at least one of the said active regions comprises a bulk material with efficient radiative carrier recombination.3. A semiconductor device of where at least one of the said active regions comprises a structure with localized quantum state of the carrier claim 1 , a structure selected from the group of quantum well and superlattice.4. A semiconductor device of one of the or where each of the said active regions emits light when biased in forward direction with respect to the polarity of adjacent carrier supply regions claim 1 , and efficiently non-radiatively conducts electric current when biased in reverse direction with respect to the polarity of adjacent carrier supply regions.5. A semiconductor device of the where the ...

SOLID STATE TRANSDUCER DEVICES WITH SEPARATELY CONTROLLED REGIONS, AND ASSOCIATED SYSTEMS AND METHODS

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material. 1. A method for operating a solid state transducer , comprising:directing a first electrical input to a first region of a solid state transducer at a first power; anddirecting no electrical input or a second electrical input to a second region of the solid state transducer concurrently with the first electrical input, the second electrical input being at a second power different than the first power, wherein the first and second regions of the solid state transducer together form a continuous active region of the solid state transducer.2. The method of claim 1 , further comprising:receiving an input corresponding to a operational characteristic of at least one of the first and second regions; andbased at least in part on the input, changing a value of at least one of the first and second powers.3. The method of wherein the input corresponds to a characteristic of light emitted by the active region.4. The method of wherein the input corresponds to a characteristic of heat emitted by the active region.5. The method of wherein directing the first and ...

High Efficiency Tandem Solar Cells and A Method for Fabricating Same

Solar cell structures comprising a plurality of solar cells, wherein each solar cell is separated from adjacent solar cell via a tunnel junction and/or a resonant tunneling structure (RTS), are described. Solar cells are implemented on Ge, Si, GaN, sapphire, and glass substrates. Each of the plurality of solar cells is at least partially constructed from a cell material which harnesses photons having energies in a predetermined energy range. In one embodiment each solar cell comprises of at least two sub-cells. It also describes a nano-patterned region/layer to implement high efficiency tandem/multi-junction solar cells that reduces dislocation density due to mismatch in lattice constants in the case of single crystalline and/or polycrystalline solar cells. Finally, solar structure could be used as light-emitting diodes when biased in forward biasing mode. The mode of operation could be determined by a programmed microprocessor. 1. A solar cell structure , comprising:A plurality of solar cells with at least two cells,a first solar cell,a second solar cell,wherein each of the solar cells include at least one of a p-n homojunction and a p-n heterojunction, andwherein the solar cell structure comprises a tunnel junction and a resonant tunneling structure between two adjacent solar cells, andwherein a first tunnel junction and a first resonant tunneling structure are located between the first solar cell and the second solar cell, andwherein the first solar cell is comprised of first p-type layer and a second n-type layer, and wherein the first p-type layer and the second n-type layer are selected one from single crystalline, poly-crystalline and nano-crystalline Si, and wherein first p-type layer serves as the substrate to support the plurality of cells, andwherein second solar cell comprises a third p-layer and a fourth n-layer, and wherein third p-layer is selected one from CdTe, ZnCdTe, CdGalnSe, and wherein the fourth n-layer is selected from CdS, ZnCdS, CdGalnSe, ...

OPTOELECTRONIC COMPONENT AND METHOD OF MANUFACTURING AN OPTOELECTRONIC COMPONENT

An optoelectronic component includes first and second semiconductor layers and an active layer that generates electromagnetic radiation, wherein the active layer is disposed between the first and second semiconductor layers, a recess in the first semiconductor layer, a front side provided for coupling out the electromagnetic radiation, a first electrical connection layer and a second electrical connection layer disposed on a rear side opposite the front side, wherein the first electrical connection layer is arranged at least partially in the recess, and a contact zone with a dopant of a second conductivity type different from the first conductivity type, wherein the contact zone adjoins the recess, and the first semiconductor layer and the second semiconductor layer are highly doped to prevent diffusion of the dopant from the contact zone into the first semiconductor layer and diffusion of the dopant from the contact zone into the second semiconductor layer. 120.-. (canceled)21. An optoelectronic component comprising:a semiconductor layer sequence comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer and an active layer that generates electromagnetic radiation, wherein the active layer is disposed between the first semiconductor layer and the second semiconductor layer,a recess in the first semiconductor layer,a front side provided for coupling out the electromagnetic radiation,a first electrical connection layer and a second electrical connection layer disposed on a rear side opposite the front side, wherein the first electrical connection layer is arranged at least partially in the recess, anda contact zone with a dopant of a second conductivity type different from the first conductivity type,wherein the contact zone adjoins the recess, andthe first semiconductor layer and the second semiconductor layer are highly doped to prevent diffusion of the dopant from the contact zone into the first semiconductor layer and ...

VERTICAL STRUCTURE LEDS

A light-emitting device can include a conductive support structure comprising a metal; a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, in which the GaN-based semiconductor structure has a first surface, a side surface and a second surface, in which the first surface, relative to the second surface, is proximate to the conductive support structure, in which the second surface is opposite to the first surface, in which the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and the conductive support structure is thicker than the n-type GaN-based semiconductor layer; a p-type electrode disposed on the conductive support structure; an n-type electrode disposed on the second surface of the GaN-based semiconductor structure; and a passivation layer disposed on the side surface and the second surface of the GaN-based semiconductor structure. 1. A light-emitting device , comprising:a conductive support structure comprising a metal;a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, wherein the GaN-based semiconductor structure has a first surface, a side surface and a second surface, wherein the first surface, relative to the second surface, is proximate to the conductive support structure, wherein the second surface is opposite to the first surface, wherein the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and wherein the conductive support structure is thicker than the n-type GaN-based semiconductor layer;a p-type electrode disposed on the conductive support structure;an n-type electrode disposed on the second surface of the GaN-based semiconductor structure; anda passivation ...

SEMICONDUCTOR LIGHT EMITTING ELEMENT

In general, according to one embodiment, a semiconductor light emitting element includes: a first semiconductor layer; a second semiconductor layer; a light emitting layer. The light emitting layer includes a well layer with a thickness of t1 (nanometers). The well layer includes InGaN having an In composition ratio x higher than 0 and lower than 1. The first semiconductor layer has a tensile strain of not less than 0.02 percent and not more than 0.25 percent in a plane perpendicular to a stacking direction. A peak wavelength λp (nanometers) of light satisfies a relationship of λp=a1+a2×(x+(t1−3.0)×a3). The a1 is not less than 359 and not more than 363. The a2 is not less than 534 and not more than 550. The a3 is not less than 0.0205 and not more than 0.0235. 1. A semiconductor light emitting element comprising:a first semiconductor layer of a first conductivity type containing a nitride semiconductor crystal;a second semiconductor layer of a second conductivity type containing a nitride semiconductor crystal; and{'sub': x', '1-x, 'a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and including a well layer with a thickness of t1 (nanometers), the well layer including InGaN having an In composition ratio x higher than 0 and lower than 1,'}the first semiconductor layer having a tensile strain of not less than 0.02 percent and not more than 0.25 percent in a plane perpendicular to a stacking direction from the first semiconductor layer toward the second semiconductor layer,the second semiconductor layer having a tensile strain in the plane,a lattice constant of the well layer being larger than a lattice constant of the first semiconductor layer and larger than a lattice constant of the second semiconductor layer, {'br': None, 'i': p=a', 'a', 'x', 't', 'a, 'λ1+2×(+(1−3.0)×3),'}, 'a peak wavelength λp (nanometers) of light emitted from the light emitting layer satisfying a relationship of'}the a1 being not less than ...

ENHANCED LIGHT EXTRACTION

There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs. 1. A light emitting structure comprising:a light emitter capable of emitting electromagnetic radiation including in the visible spectrum;an integrated transparent electrically conductive layer located adjacent the light emitter through which the light may be transmitted;wherein the integrated transparent conductive layer is shaped in order to increase the amount of light capable of being extracted from the light emitting structure.2. A light emitting structure according to claim 1 , wherein the light emitting structure is a light emitting diode (LED) or a micro-LED.3. A light emitting structure according to claim 1 , wherein the light emitter is a quantum well region from which light is capable of being emitted; and wherein the quantum well region is about 0.05-0.2 microns thick or about 0.1 micron thick.4. (canceled)5. A light emitting structure according to claim 3 , wherein the quantum well region is made from InGaN/GaN; and wherein the light emitted from the light emitter has a wavelength of about 300-700 nm.6. (canceled)7. A light emitting structure according to claim 1 , wherein the integrated transparent conductive layer is in the form of a shaped cap which is formed with the rest of the light emitting structure during fabrication e.g. etching of the cap layer which has been deposited by electron beam evaporation or physical vapor deposition claim 1 , or a range of sputter deposition techniques or from a liquid phase technique or where the transparent conductive layer has been bonded under high pressure and temperature to the light emitting structure wherein optionally the cap has a dome shaped cross-section in one or two dimensions e.g. a round claim 1 , conical or sloped cross-section or ...

VERTICALLY STRUCTURED LED BY INTEGRATING NITRIDE SEMICONDUCTORS WITH Zn(Mg,Cd,Be)O(S,Se) AND METHOD FOR MAKING SAME

A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg,Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula ZnMgCdBeOSSe, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1. 1. A light emitting diode (LED) , comprising:a nitride semiconductor light emitting component containing at least a p-type nitride semiconductor and an n-type nitride semiconductor, the nitride semiconductor light emitting component having a positive side and a negative side;a conductive Zn(Mg,Cd,Be)O(S,Se) assembly attached to the positive side of the nitride semiconductor light emitting component;a positive electrode coupled to the conductive Zn(Mg,Cd,Be)O(S,Se) assembly; anda negative electrode coupled to the negative side of the nitride semiconductor light emitting component.2. The LED of claim 1 , further comprising a further conductive Zn(Mg claim 1 ,Cd claim 1 ,Be)O(S claim 1 ,Se) assembly attached to the negative side of the nitride semiconductor light emitting component claim 1 , with the negative electrode coupled to the negative side of the nitride semiconductor light emitting component by way of the further conductive Zn(Mg claim 1 ,Cd claim 1 ,Be)O(S claim 1 ,Se) assembly.3. The LED of claim 1 , wherein said Zn(Mg claim 1 ,Cd claim 1 ,Be)O(S claim 1 ,Se) represents any of the group II-VI semiconductors satisfying a formula ZnMgCdBeOSSe claim 1 , wherein a=0˜1 claim 1 , b=0˜1 claim 1 , c=0˜1 claim 1 , p=0˜1 claim 1 , and q=0˜1.4. ...

INTEGRATION OF GALLIUM NITRIDE LEDS WITH ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE DEVICES ON SILICON SUBSTRATES FOR AC LEDS

A method for fabricating an epitaxial structure includes providing a substrate () and a heterojunction stack on a first side the substrate, and forming a GaN light emitting diode stack () on a second side of the substrate. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AIGaN) layer on the undoped GaN layer. The GaN light emitting diode stack () includes an n-type GaN layer () over the substrate, a GaN/indium gallium nitride (InGaN) multiple quantum well (MQW) structure () over the n-type GaN layer, a p-type AIGaN layer () over the n-type GaN/InGaN MQW structure, and a p-type GaN layer () over the p-type AIGaN layer.

NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE

There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group. 2. The nanostructure semiconductor light-emitting device of claim 1 , wherein the n groups include first to third groups claim 1 , and light emitted by the active layers of the first to third groups is combined to provide white light.3. The nanostructure semiconductor light-emitting device of claim 2 , wherein an emission wavelength of the active layers of the first group is in the range of about 430 nm to about 480 nm claim 2 , an emission wavelength of the active layers of the second group is in the range of about 480 nm to about 540 nm claim 2 , and an emission wavelength of the active layers of the third group is in the range of about 540 nm to about 605 nm.4. The nanostructure semiconductor light-emitting device of claim 3 , wherein a quantum well thickness of the active layers of the first group is in the range of about 1 nm to about 5 nm claim 3 , a quantum well thickness of the active layers of the second group is in the range of about 1.5 nm to about 5.5 nm claim 3 , and a quantum well thickness of the active layers of the third ...

LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF

A light-emitting element comprises: a light-emitting stack configured to emit light; and a transparent substrate comprising an upper surface on which the light-emitting stack is formed, a bottom surface opposite to the upper surface, and a side surface connecting the upper surface with the bottom surface, wherein the side surface comprises a first arc portion, a second arc portion, and a transition portion between the first arc portion from and second arc portion. 1. A light-emitting element , comprising:a light-emitting stack configured to emit light; anda transparent substrate comprising an upper surface on which the light-emitting stack is formed, a bottom surface opposite to the upper surface, and a side surface connecting the upper surface with the bottom surface, wherein the side surface comprises a first arc portion, a second arc portion, and a transition portion between the first arc portion and the second arc portion.2. The light-emitting element according to claim 1 , wherein the first arc portion is closer to the bottom surface than the second arc portion.3. The light-emitting element according to claim 2 , wherein the transition portion is the outmost part of the side surface in a lateral direction.4. The light-emitting element according to claim 3 , wherein the bottom surface comprises a first width claim 3 , the transition portion of the side surface comprises a second width greater than the first width claim 3 , and the upper surface comprises a third width smaller than the second width in a cross-sectional view.5. The light-emitting element according to claim 3 , further comprising a reflective structure conformably formed on the bottom surface and the first arc portion of the side surface.6. The light-emitting element according to claim 5 , wherein the reflective structure comprises a DBR.7. The light-emitting element according to claim 1 , wherein the transition portion comprises a flat surface.8. The light-emitting element according to claim 1 , ...

METHOD OF MAKING A LIGHT-EMITTING DEVICE

A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer. 1. A method of making a light emitting device , comprising steps of:providing a substrate;forming a light-emitting structure comprising an active layer on the substrate;forming a protective layer having a first thickness on the light-emitting structure;etching the protective layer such that the protective layer has a second thickness smaller than the first thickness; andpatterning the protective layer.2. The method of claim 1 , wherein the protective layer is formed on a top surface and a sidewall of the light-emitting structure.3. The method of claim 1 , wherein a difference between the first thickness and the second thickness is larger than 3000 Å.4. The method of claim 1 , further comprising applying a laser after forming the protective layer.5. The method of claim 4 , further comprising cutting the protective layer by the laser.6. The method of claim 4 , further comprising forming a trench in the substrate by the laser.7. The method of claim 1 , wherein the step of etching the protective layer comprises etching the protective layer by an acidic solution.8. The method of claim 1 , wherein the second thickness is between 3000-9700 Å.9. The method of claim 1 , further comprising:patterning the protective layer to form a patterned protective layer;forming a transparent conductive layer on the patterned protective layer and the light-emitting structure; andforming a first electrode on the transparent conductive layer.10. The method of claim 9 , wherein the first electrode is formed on the transparent conductive layer at a position corresponding to the patterned protective ...

RESONANT OPTICAL CAVITY LIGHT EMITTING DEVICE

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector may have a metal composition comprising elemental aluminum or may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·λ/n. K is a constant ranging from 0.25 to less than 1, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength. 1. A resonant optical cavity light emitting device comprising:a substrate;a first spacer region coupled to the substrate, the first spacer region being non-absorbing to a target emission deep ultraviolet wavelength (target wavelength), wherein at least a portion of the first spacer region comprises a first electrical polarity of n-type;a light emitting region on the first spacer region, the light emitting region being configured to emit the target wavelength;a second spacer region on the light emitting region, the second spacer region being non-absorbing to the target wavelength, wherein at least a portion of the second spacer region comprises a second electrical polarity opposite of the first electrical polarity; anda reflector coupled to the second spacer region, the reflector having a metal composition comprising elemental aluminum;wherein the light emitting region is positioned at a separation distance from the reflector; andwherein the resonant optical cavity light emitting device has an optical cavity between the reflector and a first surface of the substrate, the optical cavity comprising the first spacer region, the second spacer region and the ...

LIGHT EMITTING DIODE STRUCTURES

The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diode (LED) structures and methods of manufacture. The method includes: forming a buffer layer on a substrate, the buffer layer having at least a lattice mismatch with the substrate; and relaxing the buffer layer by pixelating the buffer layer into discrete islands, prior to formation of a quantum well. 1. A method , comprising:forming a buffer layer on a substrate, the buffer layer having at least a lattice mismatch with the substrate; andrelaxing the buffer layer by pixelating the buffer layer into discrete islands, prior to formation of a quantum well,wherein the buffer layer is a metastable buffer layer of AlN/GaN.2. (canceled)3. The method of claim 1 , wherein the substrate is one of Si claim 1 , SiC claim 1 , sapphire and glass.4. The method of claim 3 , wherein the pixelating of the buffer layer comprises forming a plurality of trenches within the buffer layer and into the substrate to form the discrete islands.5. The method of claim 4 , further comprising forming an amorphous material within the plurality of trenches.6. The method of claim 5 , wherein the amorphous material is an insulator material.7. The method of claim 5 , wherein the plurality of trenches have a depth into the substrate of about equal to or greater than a thickness of the buffer layer.8. The method of claim 7 , wherein the plurality of trenches have a depth into the substrate of about 2× the thickness of the buffer layer.9. The method of claim 5 , further comprising claim 5 , upon a temperature change claim 5 , allowing expansion of the buffer layer of each discrete island into an area of the amorphous material.10. The method of claim 1 , wherein the quantum well is multiple quantum wells formed on the discrete islands of the buffer layer to form a planar 2-D LED structure.11. The method of claim 1 , wherein the quantum well is multiple quantum wells formed on the discrete ...

LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT PACKAGE COMPRISING SAME

One embodiment of a light-emitting element comprises: a substrate; a first-conductive type semiconductor layer disposed on the substrate and including at least one pit; a superlattice layer disposed on the first-conductive type semiconductor layer and including at least one pit; an active layer disposed on the superlattice layer and including at least one pit; an electron blocking layer disposed on the active layer and including at least one pit; a pit layer disposed on the electron blocking layer and including at least one pit; and a second-conductive type semiconductor layer disposed on the pit layer, wherein the pit layer can be doped with Mg at at least a portion thereof. 111-. (canceled)12. A light-emitting element comprising:a substrate;a first-conductive semiconductor layer disposed on the substrate and including at least one pit;a superlattice layer disposed on the first-conductive semiconductor layer and including at least one pit;an active layer disposed on the superlattice layer and including at least one pit;an electron blocking layer disposed on the active layer and including at least one pit;a pit layer disposed on the electron blocking layer and including at least one pit; anda second conductive-type semiconductor layer disposed on the pit layer,wherein at least a portion of the pit layer is doped with magnesium (Mg).13. The light emitting device of claim 12 , wherein the pit layer includes a first layer doped with Mg and a second layer that is the remaining region.14. The light emitting device of claim 13 , wherein the first layer includes MgN and the second layer includes GaN.15. The light emitting device of claim 13 , wherein the first layer and the second layer of the pit layer are provided in a plural number and the plurality of first layers and the plurality of second layers are alternately stacked.16. The light emitting device of claim 15 , wherein the pit layer includes four first layers and four second layers.17. The light emitting device of ...

QUANTUM DOT LED WITH SPACER PARTICLES

Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers. 1. A method of making an illumination device , comprising:depositing a first conductive layer on a substrate;mixing a plurality of quantum dots with a plurality of spacer particles to form an active mixture,wherein the plurality of spacer particles comprises a first group of spacer particles and a second group of spacer particles, andwherein the first group of the spacer particles has a first spacer particle size substantially equal to a size of the quantum dots and the second group of the spacer particles has a second spacer particle size smaller than the size of the quantum dots;depositing the active mixture as an active layer located above the first conductive layer, wherein the active layer comprises the quantum dots interspersed with the spacer particles; anddepositing a second conductive layer above the active layer,wherein the quantum dots are configured to emit light when an electric field is generated between the first and second conductive layers, and the spacer particles are configured to not emit light when the electric field is generated between the first and second conductive layers.2. The method of claim 1 , wherein the depositing the active mixture comprises spin-coating the active mixture to form the active layer.3. The method of claim 1 , wherein the mixing comprises mixing the plurality of quantum dots with the plurality of spacer particles in a solvent.4. ...

Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods

Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

P-type Contact to Semiconductor Heterostructure

A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. A light generating structure formed over the n-type semiconductor contact layer has a set of quantum wells and barriers configured to emit or absorb target radiation. An ultraviolet transparent semiconductor layer having a non-uniform thickness is formed over the light generating structure. A p-type contact semiconductor layer having a non-uniform thickness is formed over the ultraviolet transparent semiconductor layer. 1. A heterostructure , comprising:an n-type semiconductor contact layer;a light generating structure formed over the n-type semiconductor contact layer and having a set of quantum wells and barriers configured to emit or absorb target radiation;an ultraviolet transparent semiconductor layer having a non-uniform thickness and formed over the light generating structure; anda p-type contact semiconductor layer having a non-uniform thickness and formed over the ultraviolet transparent semiconductor layer.2. The heterostructure of claim 1 , wherein the ultraviolet transparent semiconductor layer and the p-type contact semiconductor layer each has a shape corresponding to the non-uniform thickness thereof claim 1 , wherein the shape of the ultraviolet transparent semiconductor layer is complementary to receive the shape of the p-type contact semiconductor layer.3. The heterostructure of claim 2 , wherein the shape of the ultraviolet transparent semiconductor layer and the p-type contact semiconductor layer each includes a pattern that reduces a lateral area thereof claim 2 , the pattern including a plurality of elevated sections and a plurality of lower sections claim 2 , with each elevated section followed by a lower section claim 2 , wherein the elevated sections of the ultraviolet transparent semiconductor layer adjoin the elevated sections of the p-type contact semiconductor layer claim 2 , and the lower sections of the ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture. 1. A semiconductor light emitting device comprising:a semiconductor substrate comprising a first surface and a second surface, the second surface opposite to the first surface;a first metal layer formed on the first surface, the first metal layer containing Au;a second metal layer formed on the first metal layer, the second metal layer containing Au;an epitaxial growth layer formed on the second metal layer, the epitaxial growth layer containing Ga; anda first electrode layer disposed over the epitaxial growth layer such that a portion of the epitaxial growth layer is exposed in a plan view, the first electrode layer containing Au, whereinthe exposed portion of the epitaxial growth layer comprises an uneven portion.2. The semiconductor light emitting device according to claim 1 , wherein a height of the uneven portion is lower than the first electrode layer.3. The semiconductor light emitting device according to claim 1 , wherein the uneven portion is a frosting processing region.4. The semiconductor light emitting device according to claim 1 , further comprisingan n type GaAs layer formed on the epitaxial growth layer apart from the exposed portion ...

GAN BASED LED EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped ReAlOsubstrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure. 1. A GaN based LED epitaxial structure comprising:a substrate; anda GaN based LED epitaxial structure grown on the substrate,wherein the substrate is a substrate containing a photoluminescence fluorescent material.2. The GaN based LED epitaxial structure according to claim 1 , wherein the substrate comprises a rare earth element doped Yttrium Aluminum Garnet series ReAlOsubstrate.3. The GaN based LED epitaxial structure according to claim 2 , wherein the substrate comprises a substrate obtained by bonding the rare earth element doped ReAlOsubstrate with an AlOsubstrate.4. The GaN based LED epitaxial structure according to claim 3 , wherein the rare earth element doped ReAlOsubstrate comprises a ReAlOceramic substrate or single crystal substrate.5. The GaN based LED epitaxial structure according to claim 4 , wherein the ReAlOceramic substrate comprises a polycrystalline ReAlOceramic substrate or a textured ReAlOceramic substrate.6. The GaN based LED epitaxial structure according to claim 1 , wherein the substrate comprises a ...

SEMICONDUCTOR NANOCRYSTALS, METHODS FOR MAKING SAME, COMPOSITIONS, AND PRODUCTS

A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A composition comprising a plurality of semiconductor nanocrystals wherein the solid state photoluminescence efficiency of the composition at a temperature of 90° C. or above is at least 95% of the solid state photoluminescence efficiency of the composition 25° C. is further disclosed. A method for preparing semiconductor nanocrystals comprises introducing one or more first shell chalcogenide precursors and one or more first shell metal precursors to a reaction mixture including semiconductor nanocrystal cores, wherein the first shell chalcogenide precursors are added in an amount greater than the first shell metal precursors by a factor of at least about 2 molar equivalents and reacting the first shell precursors at a first reaction temperature of at least 300° C. to form a first shell on the ...

Light emitting device

The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer. A first light extraction layer is provided on the first semiconductor layer and includes a nitride semiconductor layer. The first light extraction layer includes a plurality of first layers. The refractive indexes of the first layers decrease with increasing distance from the first semiconductor layer.

Uv light emitting devices and systems and methods for production

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation. 1. A light-emitting device , comprising:a carrier; anda first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.2. The light-emitting device of claim 1 , wherein the first semiconductor structure comprises a first n-type semiconductor layer claim 1 , a first p-type semiconductor layer claim 1 , and the first MQW structure is between the first n-type semiconductor layer and the first p-type semiconductor layer; and the second semiconductor structure comprises a second n-type semiconductor layer claim 1 , a second p-type semiconductor layer claim 1 , and the second MQW structure is between the second n-type semiconductor layer and the second p-type semiconductor layer.3. The light-emitting device of claim 1 , further comprising a first top electrode formed on the first semiconductor structure claim 1 , a bottom electrode formed on the carrier claim 1 , and a third top electrode formed on the second semiconductor structure of the ...

Light emitting diode and method of manufacturing the same

A light emitting diode and a method of manufacturing the light emitting diode are provided. The light emitting diode includes an n-type semiconductor layer, an inclined type superlattice thin film layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is disposed on a substrate. The inclined type superlattice thin film layer is disposed on the n-type semiconductor layer and includes a plurality of thin film pairs in which InGaN thin films and GaN thin films are sequentially stacked. The active layer having a quantum well structure is disposed on the inclined type superlattice thin film layer. The p-type semiconductor layer is disposed on the active layer. Composition ratio of Indium (In) included in the InGaN thin film is increased as getting closer to the active layer. Thus, internal residual strain is reduced, and quantum confinement effect is enhanced, and internal quantum efficiency is increased.

OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region. 1. An optoelectronic component the luminous-active layer has a higher density of V-defects in a first lateral region than in a second lateral region,', 'in a plan view at least some of the V-defects have a contour which is given by a hexagon, a dodecagon or a honeycomb-like structure,', 'at least some of the V-defects which have the contour which is given by a hexagon, a dodecagon or a honeycomb-like structure are arranged at the lattice points of a lattice., 'comprising a layer structure comprising a luminous-active layer, wherein'}2. The optoelectronic component according to claim 1 ,wherein the lattice is a rectangular lattice, a hexagonal lattice or a triangular lattice.3. The optoelectronic component according to claim 1 ,wherein the lattice is present in the first lateral region.4. The optoelectronic component according to claim 1 ,wherein every point of the second lateral region is at a distance from a V-defect in the first lateral region that is not greater than a defined value in a lateral direction, wherein the defined value is between 0.2 μm and 10 μm.5. The optoelectronic component according to claim 1 ,wherein the V-defects are distributed in a lateral direction of the layer structure in such a way that each lateral portion of the luminous-active layer in a lateral direction is at most at a maximum distance from a V-defect which corresponds to a charge carrier diffusion length, in particular to a hole diffusion length.6. The optoelectronic component according to claim 5 ,wherein at least some lateral portions of the luminous-active layer of the layer structure, in particular each lateral portion of the luminous-active layer of the layer structure, are supplied with charge carriers injected through V-defects.7. The optoelectronic ...

LIGHT-EMITTING DEVICES AND DISPLAYS WITH IMPROVED PERFORMANCE

Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals. 198-. (canceled)99. A light-emitting device comprising: a first ...

UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures. 1. A method of fabricating an ultraviolet (UV) light emitting device comprising:receiving a UV transmissive substrate; forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius; and', 'forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius; and, 'forming a UV transmissive layer upon the UV transmissive substrate, comprising forming an n-type layer comprising aluminum gallium nitride layer upon the UV transmissive layer;', 'forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer; and', 'forming a p-type nitride layer upon the one or more quantum well structures., ' ...

UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity. 1. A method of fabricating a UV light emitting diode , comprising:forming an n-type semiconductor layer over a growth substrate within a growth chamber; andforming an active layer and a p-type semiconductor layer over the n-type semiconductor layer,wherein:the forming the n-type semiconductor layer includes growing a first n-type semiconductor layer including AlGaN,the growing the first n-type semiconductor layer includes changing a growth pressure within the growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber,the changing the growth pressure during growth of the first n-type semiconductor layer includes performing at least one cycle of a pressure increasing period and a pressure decreasing period, andthe changing the flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in a pulse form.2. The method of fabricating a light emitting diode of claim 1 , wherein the growing the first n-type semiconductor layer includes growing an AlGaN layer (0≦x≦1) in the pressure increasing period and growing an AlGaN layer (0 Подробнее

LIGHT EMITTING ELEMENT, DISPLAY DEVICE USING THE SAME, AND METHOD OF FABRICATING DISPLAY DEVICE

A light emitting device may include a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; an electrode layer disposed on the second semiconductor layer; a protective layer disposed on the electrode layer; and an insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer. 1. A light emitting device comprising:a first semiconductor layer;an active layer disposed on the first semiconductor layer;a second semiconductor layer disposed on the active layer;an electrode layer disposed on the second semiconductor layer;a protective layer disposed on the electrode layer; andan insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer.2. The light emitting device according to claim 1 , wherein the protective layer has a thickness equal to or less than a thickness of the insulating film.3. The light emitting device according to claim 1 , wherein the protective layer includes an insulating material having an etch rate equal to or higher than an etch rate of an insulating material for forming the insulating film.4. The light emitting device according to claim 1 , wherein the protective layer includes an organic photoresist material.5. The light emitting device according to claim 4 , wherein the protective layer includes at least one of polyimide and polyacrylate.6. The light emitting device according to claim 1 , whereinthe first semiconductor layer comprises an N-type semiconductor layer including an N-type dopant, andthe second semiconductor layer comprises a P-type ...

Optoelectronic Semiconductor Chip and Method of Manufacturing the Same

An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside. 119-. (canceled)20. An optoelectronic semiconductor chip comprising:a plurality of fins; and two side surfaces arranged opposite one another; and', 'an active region arranged on each of the side surfaces,, 'a current expansion layer for common contacting of at least some of the fins, each fin comprisingwherein the plurality of fins comprises inner fins and outer fins having an adjacent fin only on one side, andwherein the current expansion layer is in direct contact with the inner fins on their outside.21. The optoelectronic semiconductor chip according to claim 20 ,wherein at least one of the plurality of fins has end surfaces and a cover surface, andwherein an area of each side surface is greater than an area of each end surface and an area of the cover surface.22. The optoelectronic semiconductor chip according to claim 20 ,wherein at least one of the plurality of fins is based on a III-V compound semiconductor material, andwherein the side surfaces are parallel to an A-plane of a III-V compound semiconductor material.23. The optoelectronic semiconductor chip according to claim 22 ,wherein at least one of the plurality of fins extends parallel to a M-axis of the III-V compound semiconductor material.24. The optoelectronic semiconductor chip according to claim 20 ,wherein at least one of the plurality of fins has a length, a width and a height,wherein the height is ...

Heterostructure Including a Semiconductor Layer With a Varying Composition

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition. 1. A heterostructure comprising:a group III nitride active region including at least one quantum well and at least one barrier;a group III nitride p-type contact layer having a p-type doping, the p-type contact layer located on a first side of the active region; anda group III nitride electron blocking layer located between the active region and the p-type contact layer, wherein the electron blocking layer includes a plurality of sublayers, and wherein a difference in aluminum alloy composition of two immediately adjacent sublayers is at least 0.5%, and wherein at least one portion of the plurality of sublayers form a staircase compositional grading.2. The heterostructure of claim 1 , wherein a thickness of each sublayer in the plurality of sublayers is in a range between approximately 0.5 nanometers and approximately 50 nanometers.3. The heterostructure of claim 1 , wherein the at least one portion of the plurality of sublayers includes a decreasing staircase compositional grading in a direction toward the p-type contact layer to an aluminum alloy composition of the p-type contact layer.4. The heterostructure of claim 1 , wherein the at least one portion of the plurality of sublayers includes an increasing staircase compositional grading in a direction away from the active region claim 1 , wherein the compositional grading increases from an aluminum alloy composition of the active region at an interface between the active region and the electron blocking layer to a peak aluminum alloy composition located in a central portion of the electron blocking layer.5. The heterostructure of claim 1 , ...

Heterostructure Including a Semiconductor Layer With Graded Composition

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition. 1. A heterostructure comprising:a group III nitride active region including at least one quantum well and at least one barrier;a group III nitride p-type contact layer having a p-type doping, the p-type contact layer located on a first side of the active region; anda group III nitride electron blocking layer located between the active region and the p-type contact layer, wherein the electron blocking layer has a composition profile that includes a region of graded transition that increases in a direction away from the active region from a composition comparable to one of: the at least one quantum well or the as least one barrier in the active region.2. The heterostructure of claim 1 , wherein a composition of the region of graded transition increases linearly.3. The heterostructure of claim 1 , wherein a composition of the region of graded transition increases nonlinearly.4. The heterostructure of claim 1 , wherein the region of graded transition starts from a composition comparable to a last quantum well in the active region.5. The heterostructure of claim 1 , wherein the region of graded transition starts from a composition comparable to a last barrier in the active region.6. The heterostructure of claim 1 , wherein the composition profile of the electron blocking layer continuously changes across an entire thickness of the electron blocking layer.7. The heterostructure of claim 1 , wherein the composition profile of the electron blocking layer includes a region of constant composition that is located adjacent to the ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer. 1. A semiconductor light emitting device , comprising:a substrate;a first semiconductor layer including an n-type dopant on the substrate;an active layer having a multiple quantum well structure on the first semiconductor layer;a nitride-based semiconductor layer disposed between the active layer and the first semiconductor layer;a second semiconductor layer disposed on a top surface of the active layer;a third semiconductor layer on a top surface of the second semiconductor layer;a fourth semiconductor layer on a top surface of the third semiconductor layer;a first electrode on the first semiconductor layer; anda second electrode on the fourth semiconductor layer,wherein the second to fourth semiconductor layers include a p-type dopant,wherein the second and fourth semiconductor layers is formed of a p-type semiconductor layer,wherein the p-type semiconductor layer formed of the second semiconductor layer is formed of an InAlGaN semiconductor,wherein the third semiconductor layer is disposed between the top surface of the second semiconductor layer and a lower surface of the fourth semiconductor layer,wherein the third semiconductor layer has a concentration of the p-type dopant less than that of each of the second and fourth semiconductor layers,wherein the third semiconductor layer is formed of a lower conductive layer than that of each of the second and fourth semiconductor layers, andwherein the third semiconductor layer is formed of a GaN semiconductor.2. The ...

SEMICONDUCTOR LIGHT EMITTING ELEMENT

A semiconductor light emitting element in which changes in light distribution characteristics due to inclination angle of side surfaces are suppressed. The semiconductor light emitting element includes a semiconductor structure having a light extracting surface as its upper surface; a reflecting layer disposed on side surfaces of the semiconductor structure; and a positive electrode and a negative electrode disposed on a lower surface of the semiconductor structure. Side surfaces of the semiconductor structure are inclined, expanding upward from the lower surface to the upper surface. At least a portion of each side surface includes a plurality of protrusions, a plurality of recesses, or a combination thereof. 1. A semiconductor light emitting element comprising:a semiconductor structure having a light extracting surface as its upper surface;a reflecting layer disposed on side surfaces of the semiconductor structure; anda positive electrode and a negative electrode disposed on a lower surface of the semiconductor structure;wherein the side surfaces of the semiconductor structure are inclined, expanding upward from the lower surface to the upper surface, andwherein at least a portion of each side surface includes a plurality of protrusions, a plurality of recesses, or a combination thereof.2. The semiconductor light emitting element according to claim 1 , wherein at least a portion of the upper surface of the semiconductor structure also includes a plurality of protrusions claim 1 , a plurality of recesses claim 1 , or a combination thereof.3. The semiconductor light emitting element according to claim 1 , wherein a total area of the side surfaces of the semiconductor structure is 1.0 to 2.0 times larger than an area of the upper surface of the semiconductor structure.4. The semiconductor light emitting element according to claim 2 , wherein a total area of the side surfaces of the semiconductor structure is 1.0 to 2.0 times larger than an area of the upper surface ...

Light emitting diode and method for manufacturing same

An LED includes a substrate and a semiconductor structure mounted on the substrate. A plurality of first holes and a plurality of second holes are defined in the semiconductor structure. The second holes are located above the first holes and communicate with the first holes. A method for manufacturing the LED is also provided.

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE

A semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first side face intersects the first face. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately. The stacked body is aligned with the first substrate. The stacked body includes first and second semiconductor layers and a light emitting layer. The electrode is electrically connected to the first semiconductor layer. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face. 1. A semiconductor light emitting element , comprising:a first substrate having a first face and a first side face, the first face being parallel to a first direction and a second direction perpendicular to the first direction, the first side face intersecting the first direction and extending in the second direction, the first substrate including a plurality of conductive portions and a plurality of insulating portions arranged alternately in the first direction, each of the conductive portions and each of the insulating portions extending in the second direction;a stacked body aligned with the first substrate in a third direction intersecting with the first direction and the second direction, the stacked body including a first semiconductor layer and a second semiconductor layer and a light emitting layer, the first semiconductor layer having a second side face intersecting the first direction, the first semiconductor layer being of a first conductivity type, the second semiconductor layer being provided between the first semiconductor layer and the first face, the second semiconductor layer being of a second conductivity type, the ...

Multiple quantum well structure and method for manufacturing the same

A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.

GALNASSB SOLID SOLUTION-BASED HETEROSTRUCTURE, METHOD FOR PRODUCING SAME AND LIGHT EMITTING DIODE BASED ON SAID HETEROSTRUCTURE

The provided heterostructure includes a substrate containing GaSb, a buffer layer which contains a GaInAsSb solid solution, the buffer layer being disposed over the substrate; an active layer which contains a GaInAsSb solid solution, the active layer being disposed over the buffer layer; a confining layer for localizing major carriers, the confining layer containing a AlGaAsSb solid solution and being disposed over the active layer; a contact layer containing GaSb, the contact layer being disposed over the confining layer, wherein the buffer layer contains less indium (In) than the active layer. The provided heterostructure is characterized by increased quantum efficiency. Also a method of producing the heterostructure and a light emitting diode based on the heterostructure are provided. Light emitting diodes on the basis of the provided heterostructure emit in a mid-infrared spectral range of 1.8-2.4 μm. 1. A heterostructure based on a GaInAsSb solid solution , the hetero structure comprising:a substrate containing GaSb;a buffer layer which contains a GaInAsSb solid solution, the buffer layer being disposed over the substrate;an active layer which contains a GaInAsSb solid solution, the active layer being disposed over the buffer layer;a confining layer for localizing major carriers, the confining layer containing a AlGaAsSb solid solution and being disposed over the active layer;a contact layer containing GaSb, the contact layer being disposed over the confining layer,wherein the buffer layer contains less indium (In) than the active layer.2. The heterostructure of claim 1 , wherein a mole fraction of indium (In) among the elements of the group III in the buffer layer is 1.2-1.6%.3. A method of producing a heterostructure based on a GaInAsSb solid solution claim 1 , according to which claim 1 , using a liquid epitaxy technique:a p-type conduction buffer layer is grown on an n-type conduction GaSb substrate, the buffer layer containing a GaInAsSb solid solution;an ...

Nano-structured light-emitting device and methods for manufacturing the same

A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.

NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME

A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×10cmwhile a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency. 1. A nitride semiconductor structure comprising:a first type doped semiconductor layer;a light emitting layer;a gallium nitride based hole supply layer, containing aluminum and indium; anda second type doped semiconductor layer, wherein the light emitting layer is disposed between the first type doped semiconductor layer and the hole supply layer, and the hole supply layer is disposed between the light emitting layer and the second type doped semiconductor layer, and the hope supply layer is doped with a quadrivalent element.2. The nitride semiconductor structure as claimed in claim 1 , wherein the light emitting layer has a multiple quantum well (MQW) structure claim 1 , and a band gap of the hole supply layer is larger than a band gap of a well layer of the MQW structure.3. The nitride semiconductor structure as claimed in claim 1 , wherein the MQW structure comprises a plurality of gallium nitride based barrier layers claim 1 , which contain aluminum and indium claim 1 , and a plurality of gallium nitride based well layers claim 1 , which contain indium.4. The nitride semiconductor structure as claimed in claim 1 , wherein the second type doped semiconductor layer is doped with the concentration larger than 5×10cmand a thickness of the second type doped semiconductor layer is smaller than 30 nm.5. The ...

ULTRAVIOLET LIGHT EMITTING DEVICE SEPARATED FROM GROWTH SUBSTRATE AND METHOD OF FABRICATING THE SAME

A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including AlGaN on a substrate, forming a sacrificial layer including AlGaN on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type AlGaN (0 Подробнее

SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES

Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures. 1. A method of forming a semiconductor device assembly , the method comprising:forming at least one trench that extends through a semiconductor structure to form individual semiconductor devices, wherein the at least one trench separates the individual semiconductor devices from one another, and wherein the individual semiconductor devices include a first side, a second side opposite the first side, and conductive material at the first side;after forming the one or more trenches, attaching a transfer structure to the conductive material;after attaching the transfer structure, coupling a carrier substrate to an active surface of the individual semiconductor devices at the second side of the individual semiconductor devices, wherein the carrier substrate is optically transmissive to light; andprocessing the individual semiconductor devices on the carrier substrate.2. The method ...

SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A semiconductor light-emitting element includes a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes a light-emitting layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to a conductivity type of the first semiconductor layer. The light-emitting layer includes a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments that are partitioned in a random net shape; and a quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The base layer has a composition of AlGaN (0≦x≦1), and the barrier layer has a composition of AlGaN (0≦y<1), and the composition x and the composition y satisfy a relation of x>y. 1. A semiconductor light-emitting element comprising:a first semiconductor layer of a first conductivity type;a light-emitting functional layer that is formed on the first semiconductor layer and includes a light-emitting layer; anda second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to a conductivity type of the first semiconductor layer, whereinthe light-emitting layer includes: a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments that are partitioned in a random net shape; and a quantum well structure layer formed on the base layer and composed of at least one quantum well layer and at least one barrier layer, and{'sub': x', '1-x', 'y', '1-y, 'the base layer has a composition of AlGaN (0≦x≦1), the at least one barrier layer has a composition of AlGaN (0≦y<1), and the composition x and the composition y satisfy a relation of x>y.'}2. The semiconductor light-emitting element according to claim 1 , wherein the first semiconductor layer has a composition of GaN claim 1 , ...

QUANTUM DOT LIGHT EMITTING DEVICES

In one aspect, light emitting devices are described herein. In some embodiments, a light emitting device described herein comprises an inorganic semiconductor substrate and a layer of quantum dots (QDs) covalently bonded to the inorganic semiconductor substrate. Such a device may further comprise an electrode and an overlayer positioned between the electrode and the layer of QDs. Moreover, the overlayer can be immediately adjacent to and in contact with the layer of QDs. Further, in some cases, the layer of QDs is a close-packed layer of QDs. Additionally, the light emitting device can be a green-emitting light emitting diode (LED) or an amber-emitting LED. 1. A light emitting device comprising:a first electrode;an inorganic semiconductor substrate formed from an inorganic semiconductor having a bandgap of greater than 2 eV;a layer of quantum dots covalently bonded to the inorganic semiconductor substrate; andan overlayer positioned between the first electrode and the layer of quantum dots.2. The device of claim 1 , wherein the inorganic semiconductor substrate is formed from GaN.3. The device of claim 1 , wherein the inorganic semiconductor substrate is an n-type layer.4. The device of claim 1 , wherein the layer of quantum dots is a close-packed layer of quantum dots.5. The device of claim 1 , wherein the quantum dots are formed from a Group II-VI semiconductor material.6. The device of claim 1 , wherein the quantum dots are formed from a Group III-V semiconductor material.7. The device of claim 1 , wherein the quantum dots comprise core-shell quantum dots.8. The device of claim 1 , wherein the quantum dots emit electromagnetic radiation having a peak emission between 525 and 535 nm.9. The device of claim 1 , wherein the quantum dots emit electromagnetic radiation having a peak emission between 580 and 590 nm.10. The device of claim 1 , wherein the quantum dots are covalently bonded to the inorganic semiconductor substrate through one or more linkers having a ...

Semiconductor Heterostructure Polarization Doping

A semiconductor heterostructure including a polarization doped region is described. The region can correspond to an active region of a device, such as an optoelectronic device. The region includes an n-type semiconductor side and a p-type semiconductor side and can include one or more quantum wells located there between. The n-type and/or p-type semiconductor side can be formed of a group III nitride including aluminum and indium, where a first molar fraction of aluminum nitride and a first molar fraction of indium nitride increase (for the n-type side) or decrease (for the p-type side) along a growth direction to create the n- and/or p-polarizations. 1. A semiconductor heterostructure comprising: an n-type semiconductor side formed of a group III nitride including aluminum and gallium, wherein the n-type semiconductor side is n-type doped and includes a first molar fraction of aluminum nitride; and', 'a p-type semiconductor side formed of a group III nitride including aluminum and indium, wherein a second molar fraction of aluminum nitride and a molar fraction of indium nitride decrease along a growth direction of the p-type semiconductor side, and', 'wherein the molar fraction of indium nitride is less than 0.3., 'a doped region including2. The heterostructure of claim 1 , wherein the p-type semiconductor side further includes gallium.3. The heterostructure of claim 1 , wherein the first molar fraction of aluminum nitride increases along a growth direction of the n-type semiconductor side resulting in n-type doping.4. The heterostructure of claim 1 , wherein at least one of: the n-type semiconductor side or the p-type semiconductor side claim 1 , is not intentionally doped with a dopant.5. The heterostructure of claim 1 , wherein the polarized doped region includes an average of at least 10carriers per centimeter cubed.6. The heterostructure of claim 1 , wherein at least one of: a bandgap of the n-type semiconductor side or a bandgap of the p-type semiconductor ...

Light extraction using feature size and shape control in LED surface roughening

The structural characteristics of the light-exiting surface of a light emitting device are controlled so as to increase the light extraction efficiency of that surface when the surface is roughened. A light emitting surface comprising layers of materials with different durability to the roughening process exhibits a higher light extraction efficiency than a substantially uniform light emitting surface exposed to the same roughening process. In a GaN-type light emitting device, a thin layer of AlGaN material on or near the light-exiting surface creates sharper features after etching compared to the features created by conventional etching of a surface comprising only GaN material. 1. A light emitting device , comprising: [ a first conductive layer comprising AlxGa1−xN with x between 0.2 and 0.8;', 'a second conductive layer comprising AlxGa1−xN with x between 0 and 0.2; and', 'features extending into the first conductive layer and the second conductive layer, such that features in the first conductive layer form peaks in the light extraction surface, features in the second conductive layer form valleys in the light extraction surface and etching features at the first conductive layer are sharper than the features at the second conductive semiconductor layer;, 'a light extraction surface, comprising, 'an active layer; and', 'N and P-type contacts on a same surface opposite the light extraction surface., 'a light emitting structure, comprising2. The device of claim 1 , wherein the features are etched via a photo-electrochemical (PEC) wet etching technique.3. The device of claim 1 , wherein the features are etched via a multi-step process comprising a dry etch and a wet etch process.4. The device of claim 1 , further comprising a wavelength converting layer.5. The device of claim 4 , wherein the wavelength converting layer is formed on a roughened surface.6. A light emitting device claim 4 , comprising: [ a first conductive layer comprising InAlxGa1−xP with x between 0. ...

QUANTUM DOT DEVICE AND DISPLAY DEVICE

A quantum dot device including a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes an electron-transporting material represented by Chemical Formula 1 and an electron-controlling material capable of decreasing electron mobility of the electron auxiliary layer, and a display device. 1. A quantum dot device , comprisinga first electrode and a second electrode facing each other,a quantum dot layer disposed between the first electrode and the second electrode, andan electron auxiliary layer disposed between the quantum dot layer and the second electrode, {'br': None, 'sub': 1-x', 'x, 'ZnMO\u2003\u2003Chemical Formula 1'}, 'wherein the electron auxiliary layer comprises an electron-transporting material represented by Chemical Formula 1 and an electron-controlling material capable of decreasing electron mobility of the electron auxiliary layerwherein, in Chemical Formula 1,M is a metal except Zn, and0 Подробнее

Thin light emitting diode and fabrication method

A method for fabrication a light emitting diode (LED) includes growing a crystalline LED structure on a growth substrate, forming alternating material layers on the LED structure to form a reflector on a back side opposite the growth substrate and depositing a stressor layer on the reflector. A handle substrate is adhered to the stressor layer. The LED structure is separated from the growth substrate using a spalling process to expose a front side of the LED structure.

Group III Nitride Semiconductor Light-Emitting Device

The present invention provides a Group III nitride semiconductor light-emitting device which prevents an increase in driving voltage, and which has low threading dislocation density as a whole. The light-emitting device includes an embossed substrate. The substrate has, on a main surface thereof, a first region in which protrusions are arranged at a small pitch, and second regions in which protrusions are arranged at a large pitch. The second regions correspond to projection areas of a p-pad electrode and an n-pad electrode as viewed through the main surface of the substrate. The first region corresponds to a projection area, as viewed through the main surface of the substrate, of a region in which neither the p-pad electrode nor the n-pad electrode is formed. 1. A Group III nitride semiconductor light-emitting device comprising:a substrate having an embossed main surface;a Group III nitride semiconductor layer formed on the main surface of the substrate; andnon-translucent electrodes which are electrically conducted to the Group III nitride semiconductor layer,wherein the substrate is a heterogeneous substrate having a chemical composition different from that of the Group III nitride semiconductor layer;the heterogeneous substrate has a first region including a plurality of protrusions, and a second region including a plurality of protrusions which are arranged at a pitch larger than that of the protrusions in the first region; andthe second region has a perimeter being included within a region defined by a region perimeter located 6 μm or less outward from the perimeter of a projection area of each of the non-translucent electrodes as viewed through the main surface of the heterogeneous substrate, and also defined by a region perimeter located 6 μm or less inward from the perimeter of the projection area.2. The Group III nitride semiconductor light-emitting device according to claim 1 , wherein claim 1 , in the second region claim 1 , protrusions located more ...

COLLOIDAL NANOCRYSTALS AND METHOD OF MAKING

A tight confinement nanocrystal comprises a homogeneous center region having a first composition and a smoothly varying region having a second composition wherein a confining potential barrier monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous center region to an outer surface of the nanocrystal. A method of producing the nanocrystal comprises forming a first solution by combining a solvent and at most two nanocrystal precursors; heating the first solution to a nucleation temperature; adding to the first solution, a second solution having a solvent, at least one additional and different precursor to form the homogeneous center region and at most an initial portion of the smoothly varying region; and lowering the solution temperature to a growth temperature to complete growth of the smoothly varying region. 1. A nanocrystal comprising:a) a homogeneous region having a first composition; andb) a smoothly varying region encompassing the homogeneous region and having a second composition wherein a confining potential barrier monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous region to an outer surface of the nanocrystal.2. The nanocrystal of wherein the confining potential barrier increases to its maximum closer to the surface of the homogeneous region than to the surface of the nanocrystal.3. The nanocrystal of wherein the smoothly varying region does not have any discontinuities in its radial profile.4. The nanocrystal of wherein the homogeneous region has a diameter between about 0.05 and about 0.15 Bohr radii and the smoothly varying region has thickness between about 0.05 and about 0.30 Bohr radii.5. The nanocrystal of wherein the homogeneous region consists of a single-component claim 1 , binary or ternary semiconductor material of type IV claim 1 , II-VI claim 1 , III-V claim 1 , IV-VI or a combination ...

SOLID STATE TRANSDUCER DEVICES WITH SEPARATELY CONTROLLED REGIONS, AND ASSOCIATED SYSTEMS AND METHODS

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material. 1. A method for operating a solid state transducer , comprising:directing a first electrical input to a first region of a solid state transducer at a first power; anddirecting no electrical input or a second electrical input to a second region of the solid state transducer concurrently with the first electrical input, the second electrical input being at a second power different than the first power, wherein the first and second regions of the solid state transducer together form a continuous active region of the solid state transducer.2. The method of claim 1 , further comprising:receiving an input corresponding to an operational characteristic of at least one of the first and second regions; andbased at least in part on the input, changing a value of at least one of the first and second powers.3. The method of wherein the input corresponds to a characteristic of light emitted by the active region.4. The method of wherein the input corresponds to a characteristic of heat emitted by the active region.5. The method of wherein directing the first ...

ENGINEERED BAND GAPS

An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers. 1. An optoelectronic device comprising:a first semiconducting atomically thin layer having a first lattice direction;a second semiconducting atomically thin layer having a second lattice direction, wherein the second semiconducting atomically thin layer is proximate the first semiconducting atomically thin layer, and wherein an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° of a Vicnal angle of the first and second semiconducting atomically thin layers;a first charge carrier conductor in electrical communication with the first semiconducting atomically thin layer; anda second charge carrier conductor in electrical communication with the second semiconducting atomically thin layer.2. The optoelectronic device of claim 1 , wherein the first semiconducting atomically thin layer and the second semiconducting atomically thin layer are the same material and the first lattice direction and the second ...

NITRIDE SEMICONDUCTOR

To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 μm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness. 1. A nitride semiconductor comprising: a one conductivity type nitride semiconductor part; a quantum well active layer structure part; and a another conductivity type nitride semiconductor part opposite to said one conductivity type , which are stacked in this order on a nitride principal surface of a base having nonpolar nitride at least on one of principal surface ,wherein said one conductivity type nitride semiconductor part comprises a first nitride semiconductor layer and a second nitride semiconductor layer, which are stacked in this order, andsaid second nitride semiconductor layer has a thickness of 400 nm to 20 μm and has a substantially nonpolar outermost surface.2. The nitride semiconductor as claimed in claim 1 , wherein said first nitride semiconductor layer and said second nitride semiconductor ...

HIGH POWER LIGHT EMITTING DEVICE AND METHOD OF MAKING THE SAME

Disclosed herein are a light emitting device and a method of making the same. The light emitting device includes: a substrate including a first lead and a second lead; a light emitting diode disposed over the first lead of the substrate, including a second conductive-type semiconductor layer, an active layer, and a first conductive-type semiconductor layer, and emit near ultraviolet light; and a wavelength conversion unit disposed over the light emitting diode and spaced apart from the light emitting diode, wherein the light emitting structure has semi-polar or non-polar characteristics, the wavelength conversion unit has a multi-layered structure including a first phosphor layer and a second phosphor layer, and the light emitting diode is driven at a current density which is equal to or greater than 350 mA/mm. 1. A light emitting device , comprising:a substrate including a first lead and a second lead;a light emitting diode disposed over the first lead of the substrate, the light emitting diode including a light emitting structure including an active layer, a first conductive-type semiconductor layer disposed over the active layer, and a second conductive type semiconductor layer, the active layer disposed over the second conductive-type semiconductor layer, wherein the light emitting diode is configured to emit near ultraviolet light; anda wavelength conversion unit disposed over the light emitting diode, at least one groove formed in the light emitting structure and exposing a portion of the first conductive-type semiconductor layer;', 'a first electrode disposed under the light emitting structure and electrically connected to the first conductive-type semiconductor layer exposed by the at least one groove; and', 'a second electrode disposed under a lower surface of the second conductive-type semiconductor layer and at least partially covered by the second conductive-type semiconductor layer, and, 'wherein the light emitting diode includeswherein the light ...

NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS

A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs. 1. A semiconductor device structure , comprising:(a) an initial non-polar (Al,B,In,Ga)N layer in the structure, wherein the initial non-polar (Al,B,In,Ga)N layer has a growth surface for subsequent layers that is a grown surface, and the grown surface is a non-polar plane; and(b) one or more subsequent non-polar (Al,B,In,Ga)N layers grown directly on or above the growth surface of the initial non-polar (Al,B,In,Ga)N layer;(c) wherein the non-polar (Al,B,In,Ga)N layers form at least one non-polar (Al,B,In,Ga)N quantum well and the non-polar (Al,B,In,Ga)N quantum well has a width greater than 50 Å for generating light at a peak photoluminescence (PL) intensity.2. The device of claim 1 , wherein the initial non-polar (Al claim 1 ,B claim 1 ,In claim 1 ,Ga)N layer is grown on or above a substrate.3. The device of claim 2 , wherein the initial non-polar (Al claim 2 ,B claim 2 ,In claim 2 ,Ga)N layer is grown on or above a nucleation layer grown on the substrate.4. The device of claim 3 , wherein the substrate is an r-plane sapphire.5. The device of claim 1 , wherein the non-polar (Al claim 1 ,B claim 1 ,In claim 1 ,Ga)N quantum well has a barrier layer doped with silicon.6. The device of claim 5 , wherein the silicon has a concentration of 2×10cm.7. The device of claim 1 , wherein the non-polar (Al claim 1 ,B claim 1 ,In claim 1 ,Ga)N quantum well has a width between 50 Å and 55 Å for generating light at a peak photoluminescence (PL) ...

SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME, AND LIGHTING DEVICE COMPRISING THE SAME

A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlInGaN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer. 1. A semiconductor light emitting device , comprising:{'sup': 18', '−3', '19', '−3, 'sub': x', 'y', 'z, 'a first conductivity-type semiconductor layer including an n-type GaN contact layer, an n-type GaN layer disposed on the n-type GaN contact layer, doped with silicon (Si) acting as an n-type dopant in a concentration of 2×10cmto 9×10cm, and having a thickness of 1 nm to 500 nm, and an n-type super-lattice layer disposed on the n-type GaN layer and having a structure in which two or more AlInGaN (0≦x,y,z≦1, x+y+z>0) having different compositions are repeatedly stacked;'}a border layer disposed on the first conductivity-type semiconductor layer and having band gap energy decreasing in a direction away from the first conductivity-type semiconductor layer;an active layer contacting the border layer and having a multiple quantum well structure in which five or more quantum well layers and four or more quantum barrier layers are alternately stacked; and{'sub': x', 'y', 'z', 'x', 'y', 'z, 'sup': 18', '−3', '21', '−3, 'a second conductivity-type semiconductor layer including a p-type AlInGaN layer (0≦x,y,z≦1, x+y+z>0) disposed on the active layer and having a composition ratio of aluminum (Al) increased or decreased in a direction away from the active layer, and a p-type GaN layer disposed on the p-type AlInGaN layer (0≦x,y,z≦1, x+y+z>0), doped with magnesium (Mg) acting as a p-type dopant in a concentration of 1×10cmto 9×10cm, and having a thickness of 30 nm to 150 nm, the concentration of magnesium being increased or ...

LIGHT EMITTING DEVICE AND LIGHTING SYSTEM

Disclosed are a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. The light emitting device may include a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, an ohmic layer on the second conductive semiconductor layer, an insulating layer on the ohmic layer, a first branch electrode electrically connected with the first conductive semiconductor layer, a first pad electrode connected with the first branch electrode for electrical connection with the first conductive semiconductor layer, a second pad electrode in contact with the ohmic layer through the insulating layer, a second branch electrode connected with the second pad electrode on the insulating layer, and a second through electrode passing through the insulating layer to connect the second branch electrode with the ohmic layer. 1. A light emitting device comprising:a substrate;a first conductive semiconductor layer provided over the substrate;an active layer provided over the first conductive semiconductor layer;a second conductive semiconductor layer provided over the active layer;an insulating layer provided over the second semiconductor layer;a first electrode electrically connected to the first conductive semiconductor layer; anda second electrode electrically connected to the second conductive semiconductor layer,wherein the first electrode includes a first pad and a first branch portion that extends laterally from the first pad,wherein the second electrode includes a second pad, a second branch portion that extends laterally from the second pad, and a vertical portion that extends vertically from the second branch portion,wherein the second pad vertically extends through the insulating layer to electrically connect to the second conductive semiconductor layer, andwherein the second branch portion extends ...

Semiconductor Device

A p-type semiconductor layer includes a plurality of unit semiconductor layers, and each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface. The nitride semiconductor constituting the unit semiconductor layer includes nitrogen and two or more elements, and each of the plurality of unit semiconductor layers has a composition changing in a stacking direction such that, for example, a lattice constant in a c-axis direction increases in a c-axis positive direction. 16.-. (canceled)7. A semiconductor apparatus comprising: the p-type semiconductor layer includes a plurality of unit semiconductor layers;', 'each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface;', 'the p-type nitride semiconductor includes nitrogen and two or more elements; and', 'each of the plurality of unit semiconductor layers has a composition changing in a stacking direction., 'a p-type semiconductor layer on a substrate, wherein8. The semiconductor apparatus according to claim 7 , wherein:each of the plurality of unit semiconductor layers changes such that a lattice constant in a c-axis direction increases in a c-axis positive direction.9. The semiconductor apparatus according to claim 7 , wherein:each of the plurality of unit semiconductor layers has a composition that varies continuously.10. The semiconductor apparatus according to claim 7 , wherein each of the plurality of unit semiconductor layers are doped with p-type impurities.11. The semiconductor apparatus according to claim 7 , wherein the plurality of unit semiconductor layers includes AlGaN claim 7 , and a composition ratio of Al to Ga changes in the stacking direction.12. The semiconductor apparatus according to claim 7 , further comprising:a light emitting layer on the substrate; andan n-type semiconductor layer on the substrate.13. A method ...

LED DIE AND METHOD OF MANUFACTURING THE SAME

An LED die includes a substrate, a light emitting structure, electrodes, a first transparent protecting layer, a reflection layer, and a second transparent protecting layer. The light emitting structure includes a first semiconductor layer, an active layer, a second semiconductor layer successively formed on the substrate. A part of first semiconductor layer being exposed. A first electrode is formed the first semiconductor layer. A second electrode is formed on the second semiconductor layer. The first transparent protecting layer, the reflection layer, and the second transparent protecting layer successively formed on the first electrode. The present disclosure also provides a method of manufacturing the LED die. 1. An LED die comprising:a substrate;a light emitting structure comprising a first semiconductor layer, an active layer, a second semiconductor layer successively formed on the substrate, and a part of first semiconductor layer being exposed;a first electrode formed on the exposed part of the first semiconductor layer;a second electrode formed on the second semiconductor layer; anda first transparent protecting layer, a reflection layer, and a second transparent protecting layer successively formed on the first electrode.2. The LED die of claim 1 , wherein the first semiconductor layer is exposed by etching.3. The LED die of claim 1 , further comprising a transparent conducting layer formed on the second semiconductor layer claim 1 , and the second electrode is formed on the transparent conducting layer.4. The LED die of claim 3 , further comprising a plurality of grooves claim 3 , a first connecting area and a flat area connecting with each other claim 3 , the grooves claim 3 , the first connecting area and the flat area are formed from the transparent conducting layer to the first semiconductor layer by etching claim 3 , and the part of first semiconductor layer is exposed through the grooves claim 3 , the first connecting area and the flat area.5. The ...

Gd Doped AlGaN Ultraviolet Light Emitting Diode

A diode comprises nanowires compositionally graded along their lengths with an active region doped with gadolinium sandwiched between first and second compositionally graded AlGaN nanowire regions. The first graded AlGaN nanowire region is graded from gallium-rich to aluminum-rich with the compositional grading defining n-type polarization doping and the aluminum-rich end proximate the active region. The second graded AlGaN nanowire region is graded from aluminum-rich to gallium-rich with the compositional grading defining p-type polarization doping and with the aluminum rich end proximate the active region. The active region may include a GdN layer sandwiched between AlN layers, or an AlGdN layer with y≧0.5. The nanowires may be disposed on a silicon substrate having a GaN surface, with the gallium-rich end of the first graded AlGaN nanowire region proximate to the GaN surface, and a semitransparent electrical contact disposed on the gallium-rich end of the second graded AlGaN nanowire region. 1. An apparatus comprising:{'sub': x', '1-x, 'claim-text': the active region is doped with gadolinium,', {'sub': x', '1-x', 'x', '1-x', 'x', '1-x', 'x', '1-x, 'the first compositionally graded AlGaN nanowire region is compositionally graded from gallium-rich AlGaN to aluminum-rich AlGaN with the compositional grading defining n-type polarization doping and with the aluminum-rich AlGaN end proximate to the active region, and'}, {'sub': x', '1-x', 'x', '1-x', 'x', '1-x', 'x', '1-x, 'the second compositionally graded AlGaN nanowire region is compositionally graded from aluminum-rich AlGaN to gallium-rich AlGaN with the compositional grading defining p-type polarization doping and with the aluminum-rich AlGaN end proximate to the active region.'}], 'a diode comprising nanowires that are compositionally graded along their lengths and that include an active region sandwiched between first and second compositionally graded AlGaN nanowire regions wherein2. The apparatus of wherein ...

VERTICAL STRUCTURE LEDS

A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface. 114-. (canceled)15. A light-emitting device , comprising:a metal support structure; wherein the GaN-based semiconductor structure includes a first surface, a side surface, and a second surface,', 'wherein the first surface, relative to the second surface, is proximate to the metal support structure,', 'wherein the second surface is opposite to the first surface, and', 'wherein a thickness of the metal support structure is about 10 times a thickness of the GaN-based semiconductor structure;, 'a GaN-based semiconductor structure on the metal support structure, the GaN-based semiconductor structure including a p-type GaN semiconductor layer, a GaN active layer, and an n-type GaN semiconductor layer,'}a p-type electrode on the metal support structure;an n-type electrode on the second surface of the GaN-based semiconductor structure; anda passivation layer on the side surface and the second surface of the GaN-based semiconductor structure.16. The device according to claim 15 , wherein a thickness of the GaN-based semiconductor structure is less than or equal to 100 times a thickness of the p-type layer. ...

LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM

A light emitting device including a support substrate, an adhesive layer on the support substrate, a conductive layer on the adhesive layer, a light emitting structure on the conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, a metal layer disposed under the conductive layer and at an adjacent region of the conductive layer, and a passivation layer disposed on a side surface of the light emitting structure, wherein the first electrode is vertically non-overlapped with the conductive layer, wherein the conductive layer includes a first layer and a second layer on the first layer, wherein the second layer directly contacts with the light emitting structure, wherein the metal layer directly contacts with the light emitting structure, wherein the metal layer is expanded to an outer area of the light emitting structure, and wherein the passivation layer is disposed on the metal layer at the outer surface of the light emitting structure. 1. A light emitting device comprising:a support substrate;an adhesive layer on the support substrate;a conductive layer on the adhesive layer;a light emitting structure on the conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN;a first electrode on the light emitting structure;a metal layer disposed under the conductive layer and at an adjacent region of the conductive layer; anda passivation layer disposed on a side surface of the light emitting structure;wherein the first electrode is vertically non-overlapped with the conductive layer,wherein the conductive layer includes a first layer and a second layer on the first layer,wherein the second layer directly contacts with the light emitting structure,wherein the metal layer directly contacts with the ...

Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer

A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range. 1. A device comprising: a set of transparent regions having a first characteristic band gap, wherein the set of transparent regions are at least ten percent of an area of the lateral cross section of the at least one barrier; and', 'a set of higher conductive regions having a second characteristic band gap at least five percent smaller than the first characteristic band gap, wherein the set of higher conductive regions are at least two percent of the area of the lateral cross section of the at least one barrier, and wherein lateral inhomogeneities in at least one of: the composition or a doping of the at least one barrier forms the set of transparent regions and the set of higher conductive regions., 'a short period superlattice (SPSL) semiconductor layer, wherein a composition of at least one barrier in the SPSL semiconductor layer varies along lateral dimensions of the at least one barrier such that a lateral cross section of the at least one barrier includes2. The device of claim 1 , wherein the SPSL semiconductor layer comprises a periodic structure including a plurality of periods claim 1 , wherein at least one of: a composition or a width of each period varies along the height of the SPSL semiconductor layer.3. The device of claim 2 , wherein at least one of: a composition or a width of each period varies aperiodically from period to period in the SPSL semiconductor layer.4. The ...

Light Emitting Diode and Manufacturing Method Therefor

Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×10cmis formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature. 1. A fabrication method for an LED epitaxial structure , including:providing a growth substrate;{'sup': 18', '−3, 'forming a doping n-type ohmic contact buffer layer of 1×10cmor higher electron concentration over the growth substrate; and'}forming a light-emitting epitaxial layer via epitaxial growth over the n-type ohmic contact buffer layer, which at least includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer from bottom up.2. The fabrication method according to claim 1 , wherein the n-type ohmic contact buffer layer is AlInGaN (0≦c<1 claim 1 , 0≦d<1 claim 1 , c+d<1) formed using epitaxial growth.3. The fabrication method according to claim 1 , wherein a doping n-type ohmic contact buffer layer of 1×10cmor higher doping concentration is formed by injecting ion via the ion implantation method.4. The fabrication method according to claim 1 , wherein the energy gap of the n-type ohmic contact buffer layer is 3.4 eV or lower.5. The fabrication method according to claim 1 , wherein the thickness of the n-type ohmic contact buffer layer is 10 ...

LIGHT EMITTING STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING ELEMENT HAVING THE SAME

A light emitting structure includes an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer, and a stress regulation layer. The light emitting layer is formed between the N-type semiconductor layer and the P-type semiconductor layer. The stress regulation layer is formed between the N-type semiconductor layer and the light emitting layer. The stress regulation layer comprises a plurality of pairs of AlxIn(1-x)GaN and AlyIn(1-y)GaN layers stacked with each other, wherein 0n claim 1 , and n≧0.3. The light emitting structure of claim 1 , wherein the stress regulation layer comprises 3 to 30 pairs of the AlInGaN layer and the AlInGaN layer stacked on each other.4. The light emitting structure of claim 1 , wherein in a pair of the AlInGaN layer and the AlInGaN layer claim 1 , the AlInGaN layer is closer to the N type semiconductor layer claim 1 , the AlInGaN layer is closer to the light emitting layer claim 1 , and x>y.5. The light emitting structure of claim 4 , wherein in the pair of the AlInGaN layer and the AlInGaN layer claim 4 , 0 Подробнее

IMPACT IONIZATION LIGHT-EMITTING DIODES

Embodiments disclose LEDs that operate using impact ionization. Devices include a first conductivity type layer, an intrinsic layer, and an impact ionization layer. In some embodiments, a charge layer is on the intrinsic layer, where the charge layer comprises a first material and has a net charge. The impact ionization layer comprises a second material. The charge layer forms a barrier for transporting carriers until a bias of at least 1.5 times a bandgap of the second material is applied, and a resulting electric field in the impact ionization layer is greater than or equal to a threshold for the second material. In some embodiments the first intrinsic layer is on the first conductivity type layer and is made of the first material, and a compositional step at an interface between the intrinsic layer and the impact ionization layer creates a barrier for transporting carriers. 1. A light-emitting diode device comprising:a first conductivity type layer;a first intrinsic layer on the first conductivity type layer;a charge layer on the first intrinsic layer, the charge layer comprising a first material and having a net charge of the first conductivity type;an impact ionization layer on the charge layer, the impact ionization layer comprising a second material; anda contact layer on the impact ionization layer;wherein the charge layer forms a barrier for transporting carriers of the first conductivity type until a bias of at least 1.5 times a bandgap of the second material is applied between the first conductivity type layer and the contact layer, and a resulting electric field in the impact ionization layer is greater than or equal to an impact ionization threshold for the second material.2. The device of claim 1 , wherein the first material of the charge layer comprises a chirped composition that is chirped from a first composition near the first intrinsic layer to a second composition away from the first intrinsic layer.3. The device of claim 2 , wherein:{'sub': x', ...