СИД МОДУЛЬ МОДИФИЦИРУЕМОЙ ЛЮМИНЕСЦЕНТНОЙ ТРУБКИ, РАСПОЛОЖЕННЫЙ ВНУТРИ ГЕРМЕТИЗИРОВАННОЙ СТЕКЛЯННОЙ ТРУБКИ

Изобретение относится к области светотехники. Техническим результатом является увеличение срока работы. Устройство (100) со светодиодом содержит внешний корпус (102), элемент (114) светодиода, который включает в себя по меньшей мере один светодиод (114а), расположенный внутри внешнего корпуса (102), выводящую свет часть (108), составляющую часть внешнего корпуса (102), герметизированную полость (104), содержащую контролируемую атмосферу, и герметик (110), предназначенный для герметизации полости. Технический результат достигается за счет того, что устройство снабжено удаленным элементом (116) с органическим люминофором и газопоглотителем, расположенными в герметизированной полости, и основанием. Выводящая свет часть (108) является внешней оболочкой корпуса (102), соединенной с основанием при помощи герметика. Удаленный элемент (116) из органического люминофора представляет собой колпак, покрывающий светодиоды (114а), и расположенный между светодиодами и внешней оболочкой. Газопоглотитель ...

ИСПУСКАЮЩИЙ СВЕТ УЗЕЛ, ЛАМПА И ОСВЕТИТЕЛЬНЫЙ ПРИБОР

Изобретение относится к области светотехники. Узел 100, испускающий свет, содержит первый источник 112 света, второй источник 118 света, первый люминесцентный материал 106, второй люминесцентный материал 116 и окно 102 выхода света. Первый источник 112 света испускает свет 110 в ультрафиолетовом спектральном диапазоне. Второй источник 118 света испускает свет в синем спектральном диапазоне, имеющем первую пиковую длину волны. Первый люминесцентный материал 106 скомпонован для приема света 110 от первого источника 112 света и конфигурируется для поглощения света 110 в ультрафиолетовом спектральном диапазоне и для преобразования части поглощенного света в свет 104 в синем спектральном диапазоне. Второй люминесцентный материал 116 скомпонован для приема света 105 от второго источника 118 света и конфигурируется для почти полного преобразования принятого света 105 в синем спектральном диапазоне, принятом от второго источника света, в свет со спектральным диапазоном света, имеющим вторую пиковую ...

УСТРОЙСТВО ОСВЕЩЕНИЯ С ЭЛЕМЕНТОМ ПРЕОБРАЗОВАНИЯ ДЛИНЫ ВОЛНЫ, ПОДДЕРЖИВАЕМЫМ ПОСРЕДСТВОМ ОПОРНОЙ КОНСТРУКЦИИ, ИМЕЮЩЕЙ АПЕРТУРУ

Устройство освещения, содержащее источник света, содержащий один или более светоизлучающих диодов; элемент преобразования длины волны, который принимает излучаемый свет от источника света, причем элемент преобразования длины волны, по меньшей мере, частично преобразует излучаемый свет и формирует преобразованный свет; и непрозрачную опорную конструкцию, имеющую апертуру, при этом элемент преобразования длины волны крепится и поддерживается посредством перекрывающейся части опорной конструкции и совмещается с апертурой так, чтобы преобразованный свет, формируемый посредством элемента преобразования длины волны, испускался через апертуру; при этом перекрывающаяся часть включает в себя отражающую поверхность, которая возвращает свет, который не испускается через апертуру. Изобретение обеспечивает снижение затрат и повышение надежности. 13 з.п. ф-лы, 6 ил.

ИСТОЧНИК СВЕТА СО СВЕТОИЗЛУЧАЮЩИМ ЭЛЕМЕНТОМ

Использование: в приборах на светодиодах, испускания синего и/или ультрафиолетового излучения. Технический результат изобретения: создание источника излучения, позволяющего получать излучение в ультрафиолетовой области или в области синего цвета (от 370 нм до 490 нм), способного создавать белый свет с повышенным коэффициентом полезного действия, обеспечения возможности регулирования в широком диапазоне световых температур. Сущность: Источник света со светоизлучающим элементом, который испускает излучение в первой спектральной области, и с люминофором, который происходит из группы ортосиликатов щелочно-земельных металлов и который поглощает часть излучения источника света и испускает излучение в другой спектральной области. Согласно данному изобретению люминофор представляет собой активированный двухвалентным европием ортосиликат щелочно-земельного металла следующего состава: (2-х-у) SrO · х(Ваu, Саv) O·(1-а-b-с-d) SiO2 · aP2O5 bAl2O3 cB2O3 dGeO2: yEu2+ и/или (2-х-у) ВаО · х(Sru, Саv) O ...

КОМПОЗИЦИЯ, ЦВЕТОПРЕОБРАЗУЮЩИЙ ЛИСТ И СВЕТОИЗЛУЧАЮЩЕЕ ДИОДНОЕ УСТРОЙСТВО

Изобретение относится к неорганической химии и может быть использовано при изготовлении цветопреобразующих листов для сельского хозяйства, оптических и светоизлучающих диодных устройств. Композиция включает по меньшей мере один неорганический флуоресцентный материал, имеющий пиковую длину волны светового излучения 660-730 нм, и матричный материал, дополнительно содержащий один или несколько бромсодержащих или серосодержащих мономеров. Неорганический флуоресцентный материал выбирают из сульфидов, тиогаллатов, нитридов, оксинитридов, силикатов, оксидов металлов, апатитов, квантово-размерных материалов или их комбинаций, например из металлооксидных фосфоров, таких как Al2O3:Cr3+, Y3Al5O12:Cr3+, MgO:Cr3+, ZnGa2O4:Cr3+, MgAL2O4:Cr3+или их комбинаций. Матричный материал выбран из фотохимически отверждаемых, термоотверждающихся, термопластичных полимеров или их комбинаций. Для изготовления цветопреобразующего листа указанную композицию наносят на подложку и фиксируют матричный материал выпариванием ...

ФОТОЛЮМИНЕСЦЕНТНАЯ ПАНЕЛЬ ТРАНСПОРТНОГО СРЕДСТВА

Группа изобретений относится к системам освещения транспортного средства. Устройство подсветки транспортного средства выполнено в проеме, расположенном в панели транспортного средства. Устройство подсветки транспортного средства содержит источник света и первую фотолюминесцентную часть. Источник света расположен вблизи проема и выполнен с возможностью испускать первое излучение, имеющее первую длину волны. Первая фотолюминесцентная часть расположена вблизи панели по существу в пределах проема и выполнена с возможностью испускать второе излучение, имеющее вторую длину волны, в ответ на прием первого излучения. В проеме расположена решетка, выполненная с возможностью продолжаться до периметра проема, образованного панелью. Первая фотолюминесцентная часть расположена на решетке. Достигается повышение качества общего и рабочего освещения. 3 н. и 13 з.п. ф-лы, 8 ил.

СВЕТОДИОД С ТЕРМОЧУВСТВИТЕЛЬНЫМ ОСЛАБЛЕНИЕМ СВЕТИМОСТИ ПО ЛИНИИ ЧЕРНОГО ТЕЛА

Изобретение относится к области осветительной техники и касается осветительного устройства. Устройство содержит источник света и светопреобразующий элемент, включающий в себя светопропускающую матрицу. Светопропускающая матрица сконфигурирована в тепловом контакте с источником света и содержит первый люминесцентный материал и термочувствительное жидкокристаллическое соединение. Первый люминесцентный материал выполнен с возможностью преобразования по меньшей мере части света источника света и, опционально, света второго люминесцентного материала в свет первого люминесцентного материала. Осветительное устройство выполнено с возможностью обеспечения света осветительного устройства, включающего в себя свет источника света, свет первого люминесцентного материала и, опционально, свет второго люминесцентного материала. Светопреобразующий элемент выполнен с возможностью изменения посредством подаваемого на источник света электрического питания одного или более из цвета и цветовой температуры света ...

ОСВЕТИТЕЛЬНЫЙ ПРИБОР

Изобретение относится к области светотехники. Осветительный прибор и светоизлучающий элемент для ускорения роста растений. Прибор содержит одиночный источник излучения в виде светодиода, который обеспечивает по меньшей мере два пика излучения в интервале длин волн 300-800 нм, при этом по меньшей мере один из указанных пиков излучения имеет ширину на полувысоте, равную по меньшей мере 50 нм. Указанные пики излучения светодиода хорошо совпадают со спектром реакций фотосинтеза растений. Технический результат - повышение эффективности облучения растений. 2 н. и 9 з.п. ф-лы, 6 ил.

ИНТЕЛЛЕКТУАЛЬНАЯ АВТОМАТИЧЕСКИ ЗАКРЫВАЮЩАЯСЯ ДВЕРЬ

Настоящее изобретение относится к автоматически закрывающейся двери для закрытия зоны (3), по меньшей мере, частично определенной рамой, причем указанная автоматически закрывающаяся дверь содержит:(A) моторизованный приводной механизм (10), предназначенный для перемещения переднего края (1L) створки (1) в первом направлении (α) для закрытия указанной зоны, определенной в указанной раме, и во втором направлении (β) для открытия указанной зоны;(B) ячейки (5) обнаружения на основе использования волн, предназначенные для обнаружения присутствия препятствия в зоне, определенной рамой; и/или(C) дополнительно или альтернативно, детектор (6) удара, предназначенный для обнаружения события удара, происшедшего с передним краем створки,(D) процессор (ЦП), запрограммированный на выполнение следующих операций:(a) при открытии зоны первый раз путем перемещения переднего края створки в указанном втором направлении (β) поддерживание зоны, открытой в течение времени открытия t1, после чего(b) закрытие створки ...

СВЕТОДИОДНЫЙ ИСТОЧНИК БЕЛОГО СВЕТА С УДАЛЕННЫМ ФОТОЛЮМИНЕСЦЕНТНЫМ КОНВЕРТЕРОМ

Изобретение относится к источникам белого света на основе полупроводниковых светоизлучающих диодов с удаленными фотолюминофорными конвертерами. Техническим результатом является повышение эффективности освещения, обеспечение цветовой однородности и расширение светового потока. Осветитель содержит теплоотводящее основание с отверстием для выхода излучения, закрепленные по периферии отверстия, светоизлучающие диоды, на удалении от которых последовательно расположен конвертер излучения, выполненный в виде вогнутого слоя фотолюминофорного материала, обращенного вогнутостью к светоизлучающим диодам и выходному отверстию. При попадании на поверхность конвертера первичного излучения от светоизлучающих диодов белый свет, образующийся в результате смешения отраженного первичного излучения и вторичного излучения фотолюминофорного материала, выходит в отверстие в теплоотводящем основании, а образующийся в результате смешения проходящего через конвертер первичного излучения и вторичного излучения фотолюминофорного ...

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО, ИМЕЮЩЕЕ СИЛИКАТНЫЕ ЛЮМИНОФОРЫ С МОДИФИЦИРОВАННОЙ ПОВЕРХНОСТЬЮ

... 1. Светоизлучающее устройство, содержащее:первый светоизлучающий диод; иповерхностно-модифицированный люминофор, выполненный с возможностью поглощать свет, излучаемый из первого светоизлучающего диода, и с возможностью излучать свет, имеющий отличную от поглощенного света длину волны, причем поверхностно-модифицированный люминофор содержит:силикатный люминофор; ифторированное покрытие, расположенное на силикатном люминофоре.2. Светоизлучающее устройство по п. 1, при этом фторированное покрытие выполнено с возможностью создавать гидрофобные поверхностные центры, причем фторированное покрытие содержит фторированный неорганический агент, фторированный органический агент, или же как фторированный неорганический агент, так и фторированный органический агент.3. Светоизлучающее устройство по п. 1, при этом поверхностно-модифицированный люминофор дополнительно содержит влагозащитный слой, содержащий оксид, расположенный на фторированном покрытии или расположенный между фторированным покрытием и ...

ПОВЕРХНОСТНО-МОДИФИЦИРОВАННЫЕ СИЛИКАТНЫЕ ЛЮМИНОФОРЫ

... 1. Поверхностно-модифицированный силикатный люминофор, содержащий:силикатный люминофор; ипокрытие, включающее в себя по меньшей мере одно из указанного ниже: фторированное покрытие, включающее в себя фторированный неорганический агент, фторированный органический агент или комбинацию фторированного неорганического агента и фторированного органического агента, причем фторированное покрытие образует гидрофобные поверхностные центры, икомбинацию фторированного покрытия и по меньшей мере одного влагостойкого барьерного слоя, причем влагостойкий барьерный слой включает в себя MgO, AlO, YO, LaO, GdO, LuOи SiO,или соответствующие прекурсоры,где покрытие осаждено на поверхности силикатного люминофора.2. Поверхностно-модифицированный силикатный люминофор по п.1, где поверхностно-модифицированный люминофор включает порошкообразный люминофор на основе силикатов щелочноземельного металла.3. Поверхностно-модифицированный силикатный люминофор по п.1, где фторированное покрытие включает в себя функционализированные ...

ИНТЕЛЛЕКТУАЛЬНАЯ АВТОМАТИЧЕСКИ ЗАКРЫВАЮЩАЯСЯ ДВЕРЬ

ПАКЕТНАЯ КОНСТРУКЦИЯ ИСТОЧНИКА СВЕТА, СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ И ЖИДКОКРИСТАЛЛИЧЕСКИЙ ДИСПЛЕЙ

... 1. Пакетная конструкция источника света, содержащая:первую подложку, представляющую собой светопропускающее стекло;вторую подложку, перекрывающуюся первой подложкой;первое смоляное тело в форме рамы, которое расположено между первой подложкой и второй подложкой и соединено с первой подложкой и второй подложкой, с созданием вместе с первой подложкой и второй подложкой первого разреженного пространства;фотолюминесцентное изделие, расположенное в первом разреженном пространстве; ислой наполнителя с пропусканием света, полностью помещенный в первое разреженное пространство и обволакивающий фотолюминесцентное изделие.2. Пакетная конструкция источника света по п.1, отличающаяся тем, что вторая подложка представляет собой светопропускающее стекло.3. Пакетная конструкция источника света по п.2, отличающаяся тем, что фотолюминесцентное изделие содержит первый слой порошкового люминофора, который нанесен в виде покрытия на одной поверхности второй подложки или первой подложки.4. Пакетная конструкция ...

ОПТИЧЕСКИЙ ЭЛЕМЕНТ ДЛЯ СВЕТОИЗЛУЧАЮЩЕГО УСТРОЙСТВА И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

... 1. Оптический элемент (3) бокового излучения, содержащий спеченное керамическое тело из первого слоя (4), и второго слоя (5), скомпонованного на упомянутом первом слое (4), в котором упомянутый первый слой (4) содержит конвертирующий длину волны материал, пористость упомянутого второго слоя (5) выше, чем пористость упомянутого первого слоя (4), а поры в упомянутом втором слое (5) скомпонованы для обеспечения рассеяния пучка света, таким образом, что упомянутый световой пучок излучается главным образом с боковой поверхности (7) первого слоя (4). ! 2. Оптический элемент (3) бокового излучения по п.1, в котором отражательная способность упомянутого второго слоя (5) составляет >90%. ! 3. Оптический элемент (3) бокового излучения по п.1 или 2, в котором средний диаметр пор в упомянутом втором слое (5) находится в интервале от 0,1 мкм до 1 мкм. ! 4. Оптический элемент (3) бокового излучения по п.1 или 2, в котором пористость упомянутого первого слоя (4) ниже приблизительно 10%. ! 5. Оптический ...

ИСТОЧНИК СВЕТА, ИСПОЛЬЗУЮЩИЙ УДАЛЕННЫЙ ЛЮМИНОФОР И РОЗОВЫЙ СИД

... 1. Осветительное устройство (100), содержащее источник света (10) и светопреобразующий слой (20), где- источник света (10) содержит светодиод (СИД) (110) и слой первого люминесцентного материала (120), находящийся в физическом контакте со светоизлучающей поверхностью (115) светодиода (110), причем светодиод (110) выполнен с возможностью генерации света (111) СИД, причем слой первого люминесцентного материала (120) содержит первый люминесцентный материал (130), выполненный с возможностью преобразования по меньшей мере части света (111) СИД в свет (131) люминесцентного материала, имеющий красную составляющую, и причем источник света (10) выполнен с возможностью генерации света (11) от источника света с синей составляющей и красной составляющей света (131) люминесцентного материала;- светопреобразующий слой (20) содержит второй люминесцентный материал (30), выполненный с возможностью преобразования по меньшей мере части света (11) от источника света в свет (31) от второго люминесцентного материала ...

УСТРОЙСТВО ОСВЕЩЕНИЯ С ЭЛЕМЕНТОМ ПРЕОБРАЗОВАНИЯ ДЛИНЫ ВОЛНЫ, ПОДДЕРЖИВАЕМЫМ ПОСРЕДСТВОМ ОПОРНОЙ КОНСТРУКЦИИ, ИМЕЮЩЕЙ АПЕРТУРУ

... 1. Устройство, содержащее: ! - источник света, содержащий множество светоизлучающих диодов; ! - элемент преобразования длины волны, который принимает излучаемый свет от источника света, причем элемент преобразования длины волны, по меньшей мере, частично преобразует излучаемый свет и формирует преобразованный свет; и ! - непрозрачную опорную конструкцию, имеющую апертуру, при этом элемент преобразования длины волны крепится к опорной конструкции и совмещается с апертурой так, чтобы преобразованный свет, формируемый посредством элемента преобразования длины волны, испускался через апертуру; ! при этом апертура и элемент преобразования длины волны имеют такой размер и размещены таким образом, что элемент преобразования длины волны смешивает свет из множества светоизлучающих диодов так, что свет, излучаемый через апертуру, представляется как смежный источник света. ! 2. Устройство по п.1, в котором элемент преобразования длины волны - это твердый отдельный материал. ! 3. Устройство по п.1, ...

ИСПУСКАЮЩИЙ СВЕТ УЗЕЛ, ЛАМПА И ОСВЕТИТЕЛЬНЫЙ ПРИБОР

... 1. Узел (100, 200, 300, 350, 432), испускающий свет, содержащийпервый источник (112) света, испускающий свет (110) в ультрафиолетовом спектральном диапазоне,второй источник света (118), испускающий свет (105) в синем спектральном диапазоне, имеющем первую пиковую длину волны (λp1),первый люминесцентный материал (106, 206, 306), скомпонованный для приема света (110) от первого источника (112) света и сконфигурированный для поглощения света (110) в ультрафиолетовом спектральном диапазоне и для преобразования части поглощенного света в свет (104) в синем спектральном диапазоне,второй люминесцентный материал (116, 216, 316), скомпонованный для приема света (105) от второго источника (118) света и сконфигурированный для почти полного преобразования принятого света (105) в синем спектральном диапазоне, принятом от второго источника (118) света, в свет (114) спектрального диапазона света, имеющего вторую пиковую длину волны (λp2), причем вторая пиковая длина волны (λp2) больше, чем первая пиковая ...

Licht emittierende Vorrichtung

Eine Licht emittierende Vorrichtung wird bereit gestellt, deren Eigenschaft der Farbmischung und deren Effizienz der Lichtemission verbessert sind, während ein weißes Licht mit einer hohen Farbwiedergabeleistung mittels von vier Arten an LED-Elementen sichergestellt wird, die ein rotes Licht, ein grünes Licht, ein blaues Licht bzw. ein weißes Licht emittieren. Die Licht emittierende Vorrichtung weist eine Leuchtstoffschicht, die einen Leuchtstoff enthält, ein erstes LED-Element, um ein weißes Licht in Kombination mit einer durch eine Anregung des Leuchtstoffs erzeugten Fluoreszenz zu emittieren, ein zweites LED-Element, um ein rotes Licht zu emittieren, ein drittes LED-Element, um ein grünes Licht zu emittieren, ein viertes LED-Element, um ein blaues Licht zu emittieren, das weiter von der Leuchtstoffschicht entfernt als das zweite und dritte LED-Element angeordnet ist, ein Substrat, an dem das erste bis vierte LED-Element auf einer gemeinsamen Anbringfläche angebracht ist, einen Harzrahmen ...

LED-LICHTQUELLE, HINTERGRUNDBELEUCHTUNGSMODUL UND FLÜSSIGKRISTALLANZEIGEVORRICHTUNG

Es werden eine LED-Lichtquelle, ein Hintergrundbeleuchtungsmodul und eine Flüssigkristallanzeigevorrichtung offenbart. Die LED-Lichtquelle weist Folgendes auf: ein Gehäuse mit einem Lichtauslass, einen LED-Wafer, der innerhalb des Gehäuses angeordnet ist, wobei eine lichtemittierende Oberfläche des LED-Wafers zum Lichtauslass des Gehäuses gewandt ist, und eine Lichtanpassungsschicht, die am Lichtauslass des Gehäuses liegt. Das Hintergrundbeleuchtungsmodul weist mehrere LED-Lichtquellen und eine Lichtleitplatte auf. Die Flüssigkristallanzeigevorrichtung weist Folgendes auf: ein Flüssigkristallanzeigefeld und das Hintergrundbeleuchtungsmodul. Ein Lichtemissionswinkel der LED-Lichtquelle kann entsprechend den technischen Lösungen aus der vorliegenden Offenbarung effektiv angepasst werden.

Ladungskompensierte Nitridleuchtstoffe und deren Verwendung

Verwendung eines Leuchtstoffmaterials zum Emittieren von weißem Licht, umfassend: eine Lichtquelle, die Strahlung mit einem Peak bei 250 nm bis 550 nm emittiert, und ein Leuchtstoffmaterial, das mittels Strahlung mit der Lichtquelle verbunden ist, wobei das Leuchtstoffmaterial wenigstens eines von Ca1-a-bCeaEubAl1+aSi1-aN3, worin 0 < a ≤ 0,2, 0 ≤ b ≤ 0,2; Ca1-c-dCecEudAl1-c(Mg, Zn)cSiN3, worin 0 < c ≤ 0,2, 0 ≤ d ≤ 0,2; Ca1-2e-fCee(Li, Na)eEufAlSiN3, worin 0 < e ≤ 0,2, 0 ≤ f ≤ 0,2, e + f > 0; oder Ca1-g-h-iCeg(Li, Na)hEulAl1+g-hSi1-g+hN3, worin 0 ≤ g ≤ 0,2, 0 < h ≤ 0,4, 0 ≤ i ≤ 0,2, g + i > 0, umfasst.

Halbleiterlichtquelle mit einem ersten und zweiten Leuchtdiodenchip sowie einem ersten und zweiten Leuchtstoff

Strahlungsemittierender Halbleiterchip, optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip und Verfahren zur Beschichtung eines strahlungsemittierenden Halbleiterchips

Leuchtstoffelement und Beleuchtungsvorrichtung

Eine Leuchtstoffvorrichtung 10 beinhaltet eine Leuchtstoffschicht 1, die aus einem Leuchtstoffglas oder Leuchtstoffeinkristall besteht, einen reflektierenden Film 2, der auf der Leuchtstoffschicht 1 vorgesehen ist, eine Verzugsunterdrückungsschicht 3, die auf dem reflektierenden Film 2 vorgesehen ist, und einen Stützkörper 4, der durch direktes Bonding an die Verzugsunterdrückungsschicht gebunden ist. Das in die Leuchtstoffschicht 1 einfallende Anregungslicht „A“ wird in Fluoreszenz umgewandelt, und das Fluoreszenz- und Anregungslicht wird vom reflektierenden Film reflektiert und von der Leuchtstoffschicht abgegeben.

Beleuchtungsbaugruppe

Eine Beleuchtungsbaugruppe 1 enthält eine Beleuchtungslichtquelleneinheit 2, die konfiguriert ist zum Emittieren von weißem Licht mit einer korrelierten Farbtemperatur von 4000 K oder weniger, einer Farbabweichung Duv von ±20 oder weniger, einem S/P-Verhältnis von 1,5 oder darüber als Verhältnis der skotopischen Luminanz zur photopischen Luminanz und einem mittleren Farbwiedergabeindex RA von 60 oder darüber. Weiterhin enthält die Beleuchtungsbaugruppe 1 eine Beleuchtungslichtquelleneinheit 200, die konfiguriert ist zum Emittieren von weißem Licht mit einer korrelierten Farbtemperatur über 4000 K und unter 7000 K, einer Farbabweichung Duv von ±18 oder weniger und einem S/P-Verhältnis von 1,9 oder darüber.

LED-Verbundleiterplatte und dessen Herstellungsverfahren

Die vorliegende Erfindung betrifft eine LED-Verbundleiterplatte und deren Herstellungsverfahren. Die LED-Verbundleiterplatte umfasst ein Aluminiumsubstrat, wobei an dem Aluminiumsubstrat ein Einlegeloch ausgestanzt ist, wobei in dem Einlegeloch ein mit einer Oberfläche des Aluminiumsubstrates bündig ausgebildetes Isoliersubstrat eingebettet ist, so dass ein Verbundsubstrat gebildet wird. Auf der Oberfläche des Verbundsubstrates sind eine Isolierschicht und eine leitfähige Kupferfolie zum elektrischen Leiten von innen nach außen nacheinander vorgesehen und werden mit beaufschlagt, so dass der halbtrocknete Leim zu einer Isolierschicht ausgehärtet wird und somit eine PCB-Verbundplatte gebildet wird. An einer mit dem Isoliersubstrat korrespondierenden Stelle der PCB-Verbundplatte ist ein Antriebsleistungselement vorgesehen, so dass eine Antriebsplatte gebildet wird, wobei an einer mit dem Aluminiumsubstrat korrespondierenden Stelle der PCB-Verbundplatte LED-Lampenperlen vorgesehen sind, so ...

Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung

Es wird ein oberflächenmontierbares Halbleiterbauelement, mit einem optoelektronischen Halbleiterchip (10), einer Vielzahl von ersten Kontaktelementen (31), einer Vielzahl von zweiten Kontaktelementen (32), und einem Formkörper (40) angegeben. Erfindungsgemäß ist vorgesehen, dass die Vielzahl von ersten Kontaktelementen (31) mit einer ersten Halbleiterschicht (21) und die Vielzahl von zweiten Kontaktelementen (32) mit einer zweiten Halbleiterschicht (22) des optoelektronischen Halbleiterchips (10) elektrisch leitend verbunden ist; der Formkörper (40) den optoelektronischen Halbleiterchip (10) zumindest teilweise umgibt; das Halbleiterbauelement eine Montagefläche (50) aufweist, die zumindest stellenweise durch eine Oberfläche des Formkörpers (40) gebildet ist; und die Vielzahl von ersten und die Vielzahl von zweiten Kontaktelementen im Bereich der Montagefläche durch den Formkörper hindurchragen. Es wird außerdem ein Verfahren zur Herstellung des oberflächenmontierbaren Halbleiterbauelements ...

Lichtemittierendes Element, Beleuchtungsvorrichtung und deren Vorrichtungsrahmen

Beleuchtungsvorrichtung, umfassend:- eine Tragbasis (5);- ein lichtemittierendes Element (1), das auf der Tragbasis (5) angeordnet ist, wobei das lichtemittierende Element (1) folgendes aufweist:- ein Substrat (2) mit einer Auflagerfläche (210) und einer Seitenfläche, und- mehrere Licht emittierende Dioden-, LED, Chips (14), die auf der Auflagerfläche (210) angeordnet sind und mehrere Außenoberflächen aufweisen;- eine erste Wellenlängenumwandlungsschicht (4), die die mehreren Außenoberflächen bedeckt, ohne die Seitenfläche zu bedecken,wobei das lichtemittierende Element (1) eine erste Hauptoberfläche (21A) aufweist, die durch die mehreren Außenoberflächen gebildet wird und einen Teil der Auflagerfläche (210), der nicht von den mehreren LED Chips (14) bedeckt ist, und eine zweite Hauptoberfläche (21B) aufweist, die der Auflagerfläche (210) gegenüberliegt,wobei wenigstens einer der mehreren LED Chips (14) betrieben wird, um Licht zu emittieren, welches vorgesehen ist, das Substrat (2) zu ...

LED-light source, has covering layer comprising particles e.g. glass spheres, embedded in silicone, where difference of respective indexes of material and particles of covering layer amounts to specific value

The source (10) has a luminescence conversion layer (6) following a radiation-emitting active layer (3) of an LED chip (1) in a beam direction (11). A covering layer (7) has particles (9) e.g. glass balls and silicon dioxide, embedded in a base material (8) i.e. silicone. The material exhibits refraction indexes at room and operating temperatures. The particles exhibit refraction indexes at the temperatures, where difference of indexes of the material and the particles is greater than/equal to 0.02 und difference of other indexes of the material and the particles is less than/equal to 0.01. The temperatures lie between 80 degree Celsius and 100 degree Celsius. The room temperature is environment temperature. The active layer is designed as a PN junction, a double heterostructure, a single quantum well structure and multiple quantum well structure. The LED chip is designed as a substrateless thin film chip and an organic LED-chip.

SOLID-STATE DISPLAY APPARATUS AND WAFER FOR USE THEREIN

... 1428730 Electroluminescence MATSUSHITA ELECTRONICS CORP 30 Aug 1973 [5 Sept 1972] 40892/73 Heading C4S [Also in Divisions G4-G6] A display device comprises an array of infrared emitting diodes 4 and corresponding blocks of phosphor 5 which convert the infra-red radiation to visible light. The device comprises an insulating layer 1 supporting an Al substrate 2 with recesses 3 arranged in a figure-ofeight or to form letters or symbols. Each recess contains a GaAs diode and a block of luminescent material 5 embedded in resin 6 which acts as a light guide for the infra-red radiation; the back wall of the recesses are reflective. The blocks are of resin and a phosphor comprising one or a mixture of LaF 3 ; Yb, Er : YF 3 ; Yb, Er : YF 3 ; Yb, Tm : YOCl; Yb, Er : Y 3 OCl 7 ; Yb, Er. The cross-section of the blocks may be a circle, ellipse, square or polygon. The resins are epoxy, polyurethane or silicone. The wires 9 are of Al or Au. The Al substrate may be replaced by an Al coating on a recessed ...

Vertical LED

The LED comprises a multilayered reflector108 comprising high refractive index transparent conductive layers (eg ZnO, ITO) and low refractive index transparent dielectric layers (eg MgF, SiN etc). The transparent conductive layer 106 extends over the reflector and electrically connects to the bottom conductive layer of the reflector directly so that a conduction path is present between the electrode 107 and the device layer 104.

Vertical light emitting diodes

Encapsulation structure for light-emitting diode

Light-emitting structure and a method for fabricating the same

A light-emitting structure and a method of fabricating the light-emitting structure. The method includes covering an LED die provided on a carrier with a uniform phosphor layer, with an accommodation space constituted by the carrier and the uniform phosphor layer; and forming in the accommodation space a first light-pervious body such that the uniform phosphor layer in various shapes is formed on the LED die. The light-emitting structure thus fabricated has excellent optical property.

Uniform film-layered structure that converts the wavelengh of emitted light and method for forming the same

Light-emitting structure and a method for fabricating the same

Perovskite nanocrystal compositions

LICHTQUELLE MIT EINEM LICHTEMITTIERENDEN ELEMENT

SOURCE OF LIGHT WITH A LICHTEMITTLIERENDEN ELEMENT

TRANSPARENT COATING FOR LIGHT EMITTING DIODES AND FLUORESCENT SOURCE OF LIGHT

Horticultural LED lighting assembly

A lighting fixture for facilitating plant growth and a light emitting component. The fixture comprises a single light emission source LED device which provides at least two emission peaks in the wavelength range of 300800 nm and at least one of the emission peaks has Full Width of Half Maximum (FWHM) at least 50 nm or higher. The emission peaks of the LED match well with a plant photosynthesis response spectrum and is therefore particularly suitable for high efficiency artificial lighting.

SATURATED PHOSPHOR SOLID EMITTER

Materials and optical components for color filtering in lighting apparatus

Materials and optical components formed thereof that are suitable for use in a lighting apparatus to impart a color filtering effect to visible light. At least a portion of such an optical component is formed of a composite material comprising a polymeric matrix material and an inorganic particulate material that contributes a color filtering effect to visible light passing through the composite material, and the particulate material comprises a neodymium compound containing Nd ...

Light source

SEMICONDUCTOR LIGHT EMITTING DEVICES AND SUBMOUNTS AND METHODS FOR FORMING THE SAME

A submount for a semiconductor light emitting device (12) includes a semiconductor substrate (14) having a cavity (16) therein configured to receive the light emitting device (12). A first bond pad (22A) is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad (22B) is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member (32) and methods for forming the same are also provided.

LIGHTING MODULE

A lighting module comprising a base panel and a plurality of light-emitting diode (LED) chips attached directly to the base panel. The LED chips are in electrical communication with conductive traces on the base panel, which deliver a current to the LED chips. Various embodiments of this generally described lighting module are also presented. Additionally, methods of preparing such a lighting module, and system components of the lighting module are presented.

LIGHT-EMITTING DEVICE

A light-emitting device is disclosed which can be produced easily because of its simple structure and is capable of stably maintaining high luminous efficiency for a long time. The light-emitting device comprises, on the side of a first major surface of a nitride semiconductor substrate (1), an n-type nitride semiconductor layer (2), a p-type nitride semiconductor layer (6) placed farther than the n-type nitride semiconductor layer (2) from the nitride semiconductor substrate (1), and a light-emitting layer (4) arranged between the n-type nitride semiconductor layer (2) and the p-type nitride semiconductor layer (6). The nitride semiconductor substrate has a resistivity of not more than 0.5 .OMEGA..cndot.cm. The light-emitting device is mounted with the p-type nitride semiconductor layer side down, so that light is emitted through a second major surface (1a) of the nitride semiconductor substrate which is opposite to the first major surface.

LED LIGHT SOURCE PERFORMANCE COMPENSATION APPARATUS, DEVICE AND APPLICATION THEREOF

An LED light source performance compensation apparatus and a white light LED light emitting device. The LED light source performance compensation apparatus comprises: a light transmissive supporting member (101); the light transmissive supporting member (101) is provided with a light performance parameter adjusting member (102); after secondary light whose wavelength is 380-780 nm and which is emitted by an LED light source (103) passes through the performance compensation apparatus, light performance parameters are adjusted. The LED light source performance compensation apparatus can effectively adjust the light performance parameters of the LED light source, thereby offsetting defects of secondary light emitted by an existing finished LED light source in light performance parameters.

HIGH-EFFICIENT LIGHT ENGINES USING LIGHT EMITTING DIODES

A light emitting apparatus having a light source for emitting short wavel ength radiation and an optic device configured to receive the radiation emit ted from the light source. A device directs at least some of the short wavel ength radiation emitted from the light source into the optic device and a do wn conversion material receives at least some of the short wavelength radiat ion directed into the optic device in one spectral region and emits the radi ation in another spectral region.

SEMICONDUCTOR NANOPARTICLE-CONTAINING MATERIALS AND LIGHT EMITTING DEVICES INCORPORATING THE SAME

The present invention provides a light emitting device cap configured for location on a light emitting device comprising a primary light source. The cap defines a well region within which is received a population of semiconductor nanoparticles such that the semiconductor nanoparticles are in optical communication with the primary light source of the light emitting device when the cap is located on the light emitting device. There is further provided a light emitting device comprising a primary light source and such a cap, as well as methods for fabricating such a cap and device.

DEVICE AND PROCEDURE COMPENSATION CHARACTERISTICS OF THE LED LIGHT SOURCE AND THEIR APPLICATION

LIGHT CONVERSION PACKAGE

Method for preparing quantum dot colored film substrate and quantum dot colored film substrate

Manufacturing method of LED structure fluorescent film

Light emitting device and manufacturing method thereof

Led package, emitter package and method for emitting light

Phosphor and light-emitting device

LED Packaging structure

SINTERED PRODUCT AND LIGHT EMITTING DEVICE

Un produit fritté comprend une zone de conversion de longueur d'onde (14a) contenant une matière à base de phosphore qui réalise une conversion de longueur d'onde de lumière primaire et émet de la lumière secondaire, et une zone de maintien (14b) prévue pour être en contact avec la zone de conversion de longueur d'onde (14a). La zone de conversion de longueur d'onde (14a) et la zone de maintien (14b) sont intégrées.

발광 다이오드 패키지구조

... 본 발명에 따른 발광 다이오드 패키지구조는 발광 다이오드 칩, 상기 발광 다이오드 칩을 탑재하는 전극, 상기 발광 다이오드 칩을 에워싸고 있는 반사컵 및 상기 발광 다이오드 칩을 피복하고 있는 형광 분말층을 구비하고, 상기 반사컵의 내벽은 상기 발광 다이오드 칩과 일정한 간격을 두고 있고, 상기 반사컵의 내벽과 상기 발광 다이오드 칩사이에 빈공간이 형성되며, 상기 반사층은 상기 빈공간에 설치되고, 상기 반사층의 열분해온도가 상기 반사컵의 열분해온도보다 높다.

청색 LED 위에 투명 입자들을 함유한 인광체 층

LED 다이들이 잉크에 부유 현탁되고, 1차 광 예컨대 청색 광을 방출하는 발광 표면을 갖는 발광 층을 형성하도록 제1 지지 기판상에 인쇄된다. 투명 결합제, 인광체 분말, 및 투명한 유리 비드들의 혼합물이 잉크로서 형성되고 발광 표면 위에 인쇄된다. 혼합물은 경화될 때 파장 변환 층을 형성한다. 비드들은 바람직하게는 비드들의 상부들이 변환 층을 통해 완전히 돌출하도록 크기가 정해진다. 1차 광의 일부는 사실상 감쇠 또는 후방 산란이 없이 비드들을 통과하고, 1차 광의 일부는 인광체에 의해 2차 광으로 변환된다. 2차 광과 비드들을 통과하는 1차 광의 조합은 백색 광을 형성할 수 있다. 전체적인 컬러는 비드들의 중량 백분율을 제어함으로써 고도로 제어 가능하다.

OPTOELECTRONIC COMPONENT AND HOUSING FOR AN OPTOELECTRONIC COMPONENT

Method for packaging light emitting device without wire bonding

발광 소자 패키지 및 이를 이용한 발광 장치

... 본 발명은 발광 소자 패키지 및 이를 이용한 발광 장치에 관한 것으로, 특히 색순도와 효율 및 신뢰성을 향상시킬 수 있는 발광 소자 패키지 및 이를 이용한 발광 장치에 관한 것이다. 이러한 본 발명은, 제 1면과 제 2면을 가지며, 상기 제1면에는 장착부가 위치하고, 상기 제 1면과 제 2면을 통하는 관통홀이 구비된 패키지 몸체; 상기 제 1면 상에 위치하는 적어도 한 쌍의 제 1전극; 상기 제 2면 상에 위치하고, 상기 제 1전극과 관통홀을 통하여 연결되는 적어도 한 쌍의 제 2전극; 상기 장착부에 위치하여 상기 제 1전극과 전기적으로 연결되는 발광 소자; 상기 발광 소자 상에 위치하는 형광체층; 및 상기 형광체층 상에 위치하며, 상기 장착부를 실링하는 보호층을 포함하여 구성된다.

METHOD AND APPARATUS FOR REPAIRING A LIGHT-EMITTING DIODE USING A QUANTUM-DOT COATING

The present invention relates to a method and apparatus for repairing a light-emitting diode, which involve measuring the value of light-emitting characteristics of a produced light-emitting diode, determining the level of the measured value of the light-emitting characteristics, and coating the light-emitting diode with a quantum-dot mixture solution to form a quantum-dot layer, thereby repairing the light-emitting diode to form a good product with improved color of the emitted light and luminance, and improving yield. The method for repairing a light-emitting diode according to the present invention comprises the following three steps: measuring the value of light-emitting characteristics of a produced light-emitting diode, and determining the level of the measured value of the light-emitting characteristics; determining a repair quantum dot corresponding to the level of light emission; and forming a quantum-dot layer, corresponding to the repair quantum dot, on the top layer of the light-emitting ...

LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME

PROCESS FOR PRODUCING HEAT CURABLE RESIN COMPOSITION FOR LIGHT REFLECTION

LOW INDEX SPACER LAYER IN LED DEVICES

LIGHT-EMITTING DEVICE

LED 라이트 바 제조방법 및 LED 라이트 바

LED 라이트 바를 제조하는 방법과 LED 라이트 바를 제작하는 방법을 이용하여 제작되는 LED 라이트 바(26). 방법은 : 투명한 기판(20)을 제공하는 단계, 여기서 LED 칩들(23)을 고정하기 위한 적어도 하나의 프레임워크 영역(21)은 투명한 기판(20) 상에 제공되고, 각 프레임워크 영역(21)의 양측들에는 프레임워크 영역(21)과 평행한 적어도 하나의 연마 홈(22)가 각기 제공되며, 연마 홈(22)는 투명한 기판(20)의 상부 표면 및 하부 표면을 관통하는(penetrating through) 홈 바디임; 다이 본드 과정을 통해 프레임워크 영역(21)에서 몇몇 LED 칩들(23)을 배열하는 단계, 동일 프레임워크 영역(21)에서 LED 칩들(23)은 LED 칩 기둥을 형성함; 와이어-본딩 공정을 통해 동일 LED 칩 기둥 내에 인접한 LED 칩들의 양 및 음극들을 연결하는 단계; LED 칩들(23)이 몰딩 공정을 통해 배열된 투명한 기판(20)의 영역의 상부 및 하부 표면에, 형광 파우더와 혼합된 포장 접착제(25)를 코팅하는 단계, 및 압력의 작용 하에서 포장 접착제(25)를 구비하는 연마 홈(22)을 완전히 채우는 단계; 및 포장 접착제(25)가 응고된 후에, 동일물 주위 접착제를 구비하는 LED 라이트 바를 얻기 위해 연마 홈(22)을 따라서 절단하는 단계, 이에 의해 포장 접착제(25)로 코팅되도록 절단함으로써 마침내 얻어지는 LED 라이트 바(26)의 네 측면들을 모두 허가하고, 원래의 측-표면 라이트 누출의 문제를 극복한다. 방법을 이용하여 제조된 LED 라이트 바(26)는 균일한 하이트를 방사할 뿐만 아니라, 색 온도 일관성에 의해 형광 파우더의 이용을 증가시키는 것을 필요로 하지 않고, 이에 의해 비용을 줄인다.

DISPLAY DEVICE

METHODS OF FORMING WARM WHITE LIGHT EMITTING DEVICES HAVING HIGH COLOR RENDERING INDEX VALUES AND RELATED LIGHT EMITTING DEVICES

LED MIXING CHAMBER WITH REFLECTIVE WALLS FORMED IN SLOTS

A light emitting device having a transparent thermally conductive layer

BACK LIGHT UNIT AND DISPLAY DEVICE INCLUDING THE SAME

ILLUMINATION DEVICE WITH REMOTE LUMINESCENT MATERIAL

OPTOELECTRONIC SEMICONDUCTOR COMPONENT

LIGHT EMITTING DEVICE

A light-emitting device which has a light-emitting element comprising a nitride semiconductor and a phosphor which absorbs a part of a light emitted by the light-emitting element and emits a light having a wavelength different from that of the light having been absorbed, wherein the phosphor comprises an alkaline earth metal silicate activated by europium. © KIPO & WIPO 2007 ...

LIGHT EMITTING DIODE COMPONENT

A light emitting package (8, 8', 8", 208, 408) includes a printed circuit board (10, 10', 10", 210, 410) supporting at least one light emitting die (12, 12", 14, 16, 212, 412). A light transmissive cover (60, 60', 60", 260, 460) is disposed over the at least one light emitting die. The cover has an open end defining a cover perimeter (62, 62', 62", 262, 462) connected with the printed circuit board. An inside surface of the cover together with the printed circuit board defines an interior volume (70, 70", 270, 470) containing the at least one light emitting die. An encapsulant (76, 76", 276, 278, 476) is disposed in the interior volume and covers at least the light emitting die. © KIPO & WIPO 2007 ...

Light Emitting Device

LIGHT-EMITTING DEVICE

A light-emitting device in which a gallium nitride upper and lower electrode type light-emitting diode is provided on a ceramic substrate on which at least a pair of insulated metal substrates or at least two package electrodes are formed. In the light-emitting device, a gallium nitride upper and lower electrode type light-emitting diode (11) is mounted on substrates (12, 14). The power of the gallium nitride upper and lower electrode type light-emitting diode (11) is connected on the substrates (12, 14), and is surrounded by a reflector (16). The reflector (16) is adhered to the substrates (12, 14) with an adhesive. Further, the reflector (16) is provided in such a manner that a fluorescent layer covers an aperture plane. COPYRIGHT KIPO & WIPO 2010 ...

METHOD FOR MANUFACTURING A WHITE LED WHICH CAN EMIT A PERFECT WHITE LIGHT WITH LESS COLOR DEFLECTION BASED ON A UNIFORM COATING OF PHOSPHOROUS MATERIAL

PURPOSE: A method for manufacturing a white LED is provided to prevent deformation of the blue chip due to heat generation by forming lamps in two steps. CONSTITUTION: A blue chip(11) is mounted on a lead frame(10), and then the blue chip mounted on the lead frame and the lead frame are electrically connected to each other by a wire(12). A first lamp(13) is formed on the blue chip which is electrically connected with the lead frame, and then phosphor(14) is coated on the first lamp. A second lamp(15) is formed on the first lamp which is previously coated with the phosphor. The first lamp is made by mixing phosphor and an epoxy resin. © KIPO 2008 ...

SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE

LED MANUFACTURING METHOD, LED MANUFACTURING DEVICE, AND LED

Led with scattering features in substrate

ENHANCED COLOR-PREFERENCE LIGHT SOURCES

Solid state lighting device

A solid state lighting device comprises a housing within a reflective cup, a solid state emitter within the housing, a sealant encompassing the solid state emitter within the cup, and a multi-layer with luminescence element on the transparent sealant and absorbing lights from the solid state emitter to emit light with larger wavelength, wherein the multi-layer with luminescence includes a phosphor or fluorescence between two transparent plates.

Light output device

A light output device comprises a substrate arrangement (1, 2), at least one light source (4) within the substrate arrangement and having a light output which is generally directed laterally within the substrate arrangement and an arrangement of passive light source elements (6; 10). The passive light source elements (6; 10) form part of the substrate arrangement, for illumination by the light source output, and in response to project output light. Different colours are provided at different output regions of the device, generating a multi-colour image, or at different output directions, thereby generating different colour effects from different viewing positions.

Optoelectronic device and method for the production thereof

A method for producing an optoelectronic device comprising the following steps is provided: - providing a semiconductor chip (1), which emits electromagnetic radiation of a first wavelength range from a radiation exit surface (4) during operation, - coating at least the radiation exit surface (4) with a light-transmitting resin layer (7), - coating a surface (9) of the light-transmitting resin layer (7) with a powder layer (10) comprising phosphor particles (12), wherein the phosphor particles (12) are configured to convert the light of the first wavelength range in electromagnetic radiation of a second wavelength range, and - curing the light-transmitting resin layer (7). Furthermore, an optoelectronic device is provided.

Light-emitting device and electronic device using the same

A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; and a white-emissive light-emitting element formed over and being in contact with the thin film transistor.

Light-emitting device

A light-emitting device including a light-emitting unit, an electrode unit, and an insulating unit is provided. The light-emitting unit includes an illuminator and a packaging sealant. The illuminator generates an optical energy by way of electroluminescence, and the packaging sealant is formed on a part of a surface of the illuminator. The electrode unit includes a first electrode and a second electrode respectively formed on the surface of the illuminator on which no packaging sealant is formed. The insulating unit is formed on the surface of the light-emitting unit and includes a first insulating layer protruded between the first electrode and the second electrode. When the light-emitting device of the invention is electrically connected to an external circuit board using solder, the insulating unit effectively separates the elements to avoid the elements being short-circuited by the solder overflowing.

New class of siloxane ligands to be used for dispersing quantum dots in silicone hosts to obtain color converters for LED lighting

The invention provides a luminescent material comprising wavelength converter nanoparticles (120) with siloxane polymer capping ligands (130) associated to the wavelength converter nanoparticles (120), wherein the siloxane polymer capping ligands (130) comprise siloxane polymers which comprise at least one capping group comprising a terminal carboxylic acid group, wherein the capping group comprises in total at least six carbon atoms.

Wavelength converting material for a light emitting device

Illumination device with remote luminescent material

The invention provides an illumination device comprising a light source and a transmissive arrangement. The light source is arranged to generate light source light and comprises a light emitting device (LED), arranged to generate LED light and a carrier comprising a first luminescent material. The carrier is in contact with the LED and the first luminescent material is arranged to convert at least part of the LED light into first luminescent material light. The transmissive arrangement of a second luminescent material is arranged remote from the light source and is arranged to convert at least part of the LED light or at least part of the first luminescent material light and/or at least part of the LED light. The invention overcomes current limitations of remote luminescent material systems in spot lighting. In addition, an extremely simple way of realizing light sources with various correlated colour temperatures is allowed, based on just a single type of white (or whitish) light source in combination with various (red-orange) remote luminescent materials.

White led device and manufacturing method thereof

The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.

Packaged light emitting diodes including phosphor coating and phosphor coating systems

Light emitting structures are disclosed that can include a semiconductor light emitting diode (LED) that includes a p-n junction active layer. A first layer can include a binder material having a thickness that is less than about 1000 μm, wherein the first layer is directly on the LED. A second layer can include phosphor particles, where the second layer can have a thickness that is less than about 1000 μm and can be directly on the first layer so that the first layer is between the LED and the second layer.

Surface-modified silicate luminophores

A surface-modified silicate luminophore includes a silicate luminophore and a coating includes at least one of (a) a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and (b) a combination of the fluorinated coating and at least one moisture barrier layer. The moisture barrier layer includes MgO, Al 2 O 3 , Y 2 O 3 , La 2 O 3 , Gd 2 O 3 , Lu 2 O 3 , and SiO 2 or the corresponding precursors, and the coating is disposed on the surface of the silicate luminophore.

Light emitting device and manufacturing method thereof

A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 μm or more. (M 1−x1 Eu x1 ) 3−y Si 13−z Al 3+z O 2+u N 21−w   (1) (In the equation ( 1 ), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0<x1<1, −0.1<y<0.3, −3<z≦1, −3<u−w≦1.5)

Light emitting device and manufacturing method of light emitting device

A light emitting device may include a base provided with a recess portion in a side surface thereof, a light emitting element mounted on a main surface of the base, a first resin body filled in an inside of the recess portion, and covering at least the main surface and the light emitting element, a second resin body covering an outside of the first resin body from the main surface side to at least a position of the lowermost end of the recess portion in a direction orthogonal to the main surface, and phosphor, provided in the second resin body, for absorbing light emitted from the light emitting element and then emitting light having a different wavelength.

Led encapsulation process and shield structure made thereby

The present invention discloses an LED encapsulation process and a shield structure made thereby. Firstly, a first encapsulation layer is provided, phosphor powder is uniformly disposed on a surface of the first encapsulation layer, and a second encapsulation layer is disposed on the phosphor powder to fully cover the first encapsulation layer so that the phosphor powder is sandwiched between the two encapsulation layers to ensure its arrangement position. Finally, the aforementioned members are heated and stamped to form one piece which is cut into a required shield shape.

Light emitting diode package

An exemplary light emitting package includes a base, an LED chip mounted on the base, an encapsulant layer encapsulating the LED chip and a phosphor layer located above and separated from the LED chip. The phosphor layer includes a phosphor scattered portion and a clear portion without phosphor therein. An area of the phosphor scattered portion is smaller than the light emitting area of the encapsulant layer from which light emitted upwardly from the LED chip leaves the encapsulant layer.

Semiconductor light emitting device

A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

Light emitting device having a transparent thermally conductive layer

A light emitting device and method of producing the same is disclosed. The light emitting device includes a transparent thermally conductive layer, a phosphor layer provided on the transparent thermally conductive layer, wherein the phosphor layer is not enclosed within any layers not containing phosphor, and at least one light emitting semiconductor arranged to emit light toward the transparent thermally conductive layer and the phosphor layer.

Lens, optoelectronic component comprising a lens and method for producing a lens

A lens includes a main body and a potting material. The main body includes a first major face, a second major face and at least one cavity arranged on the first major face. The potting material is arranged in the cavity and includes at least one diffuser which scatters radiation of at least one wavelength range.

Led with remote phosphor layer and reflective submount

A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.

Light-Emitting Diode Package Device and Method for Making the Same

A light-emitting diode package device includes: a base unit defining a packaging space; a light-emitting diode die that is disposed inside the packaging space to electrically connect to the base unit and that is capable of emitting light; and an encapsulant that is filled in the packaging space to encapsulate the light-emitting diode die and that includes an upper surface to be exposed to external environment, and a plurality of microstructures formed on the upper surface.

Tunable remote phosphor constructs

A solid state lighting comprising: at least one LED element positioned on a top surface of a substrate or a submount; and a polygonal structure comprising a plurality of edges forming a plurality of facets configured to receive light from the at least one LED element, the polygonal structure comprising a wavelength converting material, wherein the wavelength converting material is remotely positioned from the at least one LED element.

Led module

An LED (Light Emitting Diode) module includes an LED unit having one or more LED chips and a case. The case includes: a body including a base plate made of ceramic, the base plate having a main surface and a bottom surface opposite to the main surface; a through conductor penetrating through the base plate; and one or more pads formed on the main surface and making conductive connection with the through conductor, the pads mounting thereon the LED unit. The through conductor includes a main surface exposed portion exposed to the main surface and overlapping the LED unit when viewed from top, a bottom surface reaching portion connected to the main surface exposed portion and reaching the bottom surface. The pads cover at least a portion of the main surface exposed portion.

Systems and Methods Providing Semiconductor Light Emitters

A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board.

Light-emitting semiconductor device and package thereof

The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.

White light luminescent device based on purple light leds

The present invention relates to a white light luminescent device based on purple light LED. The white light luminescent device includes a housing, a support plate, at least one purple light LED semiconductor light source, and a piece of high silica luminescent glass. The support plate is received in the housing. The at least one purple light LED semiconductor light source is positioned on the support plate. The piece of high silica luminescent glass doped with Eu ions is opposite to the purple light LED semiconductor light source. One surface of the high silica luminescent glass away from the purple light LED semiconductor light source is coated with a phosphor layer formed with a selection from a mixture of yellow phosphor and red phosphor, a mixture of green phosphor and red phosphor, and yellow phosphor.

Light emitting device

A light emitting device, comprises an element mounting substrate with a circuit pattern at least on an element mounting surface of the element mounting substrate, a light emitting element mounted on the element mounting surface of the element mounting substrate and connected with the circuit pattern, a sealing member that seals the light emitting element and is bonded on the element mounting surface, and a coating layer that covers the element mounting side of the element mounting substrate inside the sealing member, wherein the coating layer has its refractive index smaller than that of the sealing member.

Light emitting diode with conformal surface electrical contacts with glass encapsulation

An optoelectronic device (e.g., LED) comprising one or more conformal surface electrical contacts conforming to surfaces of the device; and a high refractive index glass partially or totally encapsulating the device and the conformal surface electrical contacts, wherein traditional wire bonds and/or bond pads are not used and the glass is a primary encapsulant for the device.

Package structure of semiconductor light emitting element

A package structure of semiconductor light emitting element is provided. The package structure of semiconductor light emitting element includes a substrate, a light emitting element and a transparent conductive board. A first electrode and a second electrode are disposed on the substrate. The light emitting element is disposed on the substrate and between the first electrode and the second electrode. A first bonding pad and a second bonding pad are disposed on the light emitting element. The transparent conductive board has a first surface and a second surface opposite to the first surface. The second surface of the transparent conductive board is located over the light emitting element for electrically connecting the first electrode and the first bonding pad and electrically connecting the second electrode and the second bonding pad.

Light emitting module and phosphor

A light emitting module includes a light emitting device that emits ultraviolet rays or short-wavelength visible light, a blue phosphor that is excited by the ultraviolet rays or the short-wavelength visible light to emit visible light. The blue phosphor is represented by a general formula of (Ca 1-x-y ,Sr x ,Eu y ) 5 (PO 4 ) 3 Cl, wherein 0.10<x<0.60, 0.002<y<0.060, and 0.02<y/(x+y)<0.17.

PHOSPHOR-CONVERTED SINGLE-COLOR LED INCLUDING A LONG-WAVELENGTH PASS FILTER

A phosphor-converted single-color LED is provided. The phosphor-converted single-color LED includes a long-wavelength pass filter having a special construction. The phosphor-converted single-color LED has high color purity and efficiency despite the use of a phosphor in the form of a nano/micro powder. 1. A phosphor-converted single-color LED comprising:a blue light source;a phosphor disposed on the blue light source to absorb blue light emitted from the blue light source and emit light at a wavelength of 500 to 700 nm; anda long-wavelength pass filter disposed on the phosphor to reflect blue light and transmit light at a wavelength of 500 to 700 nm,wherein the long-wavelength pass filter comprises a layer stack comprising first thin films and second thin films laminated alternately and repeatedly, the second thin films having a refractive index higher than that of the first thin films, wherein an uppermost layer and a lowermost layer are formed on and under the layer stack, respectively, and wherein at least one layer of the uppermost layer and the lowermost layer has an optical thickness corresponding to 1/80 to 1/4.4 of the peak wavelength of the reflection band of the blue light.2. The phosphor-converted single-color LED according to claim 1 , wherein each of the first thin films and the second thin films constituting the layer stack disposed between the uppermost layer and the lowermost layer has an optical thickness corresponding to ⅓ to ⅕ of the peak wavelength of the reflection band of the blue light.3. The phosphor-converted single-color LED according to claim 1 , wherein the uppermost layer and the lowermost layer has optical thicknesses corresponding to 1/7 to 1/9 of the peak wavelength of the reflection band of the blue light.4. The phosphor-converted single-color LED according to claim 1 , wherein the first thin films are lowermost and uppermost layers of the layer stack.5. The phosphor-converted single-color LED according to claim 1 , wherein the layer ...

Semiconductor nanocrystal-polymer composite, method of preparing the same, and composite film and optoelectronic device including the same

A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (—COO − ) bindable to a surface of the semiconductor nanocrystal, and a metal cation bindable to a carboxylate anion group of the plurality of carboxylate anion groups.

Semiconductor nanocrystal-polymer micronized composite, method of preparing the same, and optoelectronic device

A semiconductor nanocrystal-polymer micronized composite that includes: at least one semiconductor nanocrystal; and a polymer surrounding the at least one semiconductor nanocrystal, wherein the polymer includes at least one functional group reactive with the semiconductor nanocrystal, and wherein the semiconductor nanocrystal-polymer micronized composite has a particle diameter of less than or equal to about 70 micrometers (μm) with a standard deviation of less than or equal to about 20 micrometers (μm), and an aspect ratio of more than about 1.0 and less than or equal to about 10.

Phosphor and light emitting device

The present invention provides a phosphor emitting green fluorescence when being effectively excited by excitation light in a wavelength range from blue light to near-ultraviolet light, having an emission intensity that does not vary significantly with variation in the wavelength of the excitation light, and being manufactured easily. The phosphor includes a chemical structure represented by the following general formula (A): A(M 1-a-x Eu a Mn x )L(Si 1-b Geb) 2 O 7   , (A), where A is one or more elements selected from Li, Na, and K, M is one or more elements selected from Mg, Ca, Sr, Ba, and Zn, L is one or more elements selected from Ga, Al, Sc, Y, La, Gd, and Lu, a is a numerical value satisfying 0.001≦a≦0.3, b is a numerical value satisfying 0≦b≦0.5, and x is a numerical value satisfying 0≦x≦0.2.

Multi-layer array type led device

A multi-layer array type LED device is provided, which includes a substrate, an encapsulation body, two lead frames, a plurality of LED dices, and a set of optical lens. The outer circumferential edge and the upper and lower periphery of the substrate are completely encapsulated by the encapsulation body so that the multi-layer array type LED device can be tightly packaged. In the present invention, a fluorescent layer is disposed between an optical grease layer and a silica gel protection layer, and thereby the fluorescent layer is protected, and is capable of preventing moisture from permeating therein. On the other hand, in the present invention, the reflection coefficient of the optical grease layer is at least larger than a certain value so that the probability of the light emitted out of the optical chamber can be increased.

Wavelength converted light emitting device

Embodiments of the invention include a semiconductor light emitting device ( 10 ) capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element ( 12 ) capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element ( 12 ) is attached to a support ( 51 ) and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions ( 46 ) of semiconductor wavelength converting material and at least one second region ( 48 ) without semiconductor wavelength converting material disposed between the at least two first regions.

Surface Modified Nanoparticles

Surface-modified nanoparticles are produced by associating ligand interactive agents with the surface of a nanoparticle. The ligand interactive agents are bound to surface modifying ligands that are tailored to impart particular solubility and/or compatibility properties. The ligand interactive agents are crosslinked via a linking/crosslinking agent, such as hexamethoxymethylmelamine or a derivative thereof. The linking/crosslinking agent may provide a binding site for binding the surface modifying ligands to the ligand interactive agents.

Coating Method for an Optoelectronic Chip-on-Board Module

A method is proposed for coating an optoelectronic chip-on-board module including a flat substrate populated with one or more optoelectronic components having at least one primary optical arrangement and optionally at least one secondary optical arrangement. The optoelectronic chip-on-board module is coated with a transparent, UV-resistant, and temperature-resistant coating made of silicone by the following steps: (a) casting a liquid silicone into a mold open towards the top and having outer dimensions corresponding to or exceeding outer dimensions of the substrate; (b) inserting the substrate into the mold, wherein the optoelectronic component(s) are immersed completely into the silicone and a surface of the substrate contacts the silicone completely or the substrate immerses into the silicone at least partially with full surface contact; (c) curing and cross-linking the silicone with the optoelectronic component(s) and the substrate; and (d) removing the substrate from the mold with the coating of cured silicone.

LIGHT-EMITTING DIODE DEVICE

An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; wherein the first surface and the surface comprise an included angle larger than zero; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection. 1. An encapsulated light-emitting diode device , comprising:a circuit carrier, comprising a surface; and a transparent substrate, comprising a first surface and a second surface;', 'a light-emitting diode chip located on the first surface of the transparent substrate; and', 'a first transparent glue covering the light-emitting diode chip and formed on the first surface;, 'a light-emitting device, comprisingwherein the first surface and the surface comprise an included angle larger than zero;wherein the first transparent glue has a substantially circular projection on the first surface and the light-emitting diode chip is substantially located at the geometry center of the circular projection.2. The encapsulated light-emitting device as claimed in claim 1 , wherein the included angle is between 45 degrees to 135 degrees.3. The encapsulated light-emitting device as claimed in claim 1 , further comprising a second transparent glue formed on the second surface corresponding to the first transparent glue.4. The encapsulated light-emitting device as claimed in claim 1 , further comprising a fixing glue forming on the first surface and surrounding the periphery of the first transparent glue.5. The encapsulated light-emitting device as claimed in ...

Method of Manufacturing Light Emitting Device

To make a light emitting device, a light emitting element is placed in a recess of a package, powders having a fluorescent material and coated with inorganic particles are provided, the fluorescent powders, fillers and a resin are mixed, the light emitting element placed in the recess of the package is sealed with the resin, and a centrifugal force is applied to the sealed package so that the fluorescent powders and the fillers sediment are pushed toward a bottom of the recess. 1. A method of manufacturing a light emitting device , comprising:mounting a light emitting element in a recess of a package;connecting the package and the light emitting element with bonding wires;providing a resin containing a fluorescent material and a filler mixed therein;sealing the light emitting element mounted in the recess of the package with the resin; andapplying a centrifugal force to the sealed package so that the fluorescent material and the filler are pushed toward a bottom of the recess and forming a deposited layer comprising filler, the filler being deposited covering at least a part of the bonding wires.2. The method of claim 1 , wherein claim 1 , during the application of the centrifugal force claim 1 , a sum of the centrifugal force and gravity has a direction perpendicular to a top surface of the light emitting element.3. The method of claim 1 , wherein claim 1 , the deposited layer of filler is disposed covering an upper surface of a deposited layer comprising fluorescent material.4. The method of claim 1 , wherein the resin further comprises a diffusing agent.5. The method of claim 1 , wherein the package includes positive and negative lead electrodes and the light emitting element includes positive and negative I ad electrodes claim 1 , and wherein connecting the package and the light emitting element with bonding wires comprises connecting the positive and negative lead electrodes of the package to the respective positive and negative electrodes of the light emitting ...

Light-emitting device

Disclosed is a light-emitting device ( 1 ) including a light-emitting element ( 2 ) emitting primary light, and a light converter ( 3 ) absorbing a part of the primary light emitted from the light-emitting element ( 2 ) and emitting secondary light having a longer wavelength than the primary light. The light converter ( 3 ) contains a green light-emitting phosphor ( 4 ) and a red light-emitting phosphor ( 5 ). The green light-emitting phosphor ( 4 ) is composed of at least one phosphor selected from a divalent europium-activated oxynitride phosphor substantially represented by the following formula: Eu a Si b Al c O d N e and a divalent europium-activated silicate phosphor substantially represented by the following formula: 2(Ba 1-f-g MI f Eu g )O.SiO 2 , while the red light-emitting phosphor ( 5 ) is composed of at least one phosphor selected from tetravalent manganese-activated fluoro-tetravalent metalate phosphors substantially represented by the following formulae: MII 2 (MIII 1-h Mn h )F 6 and/or MIV(MIII 1-h Mn h )F 6 . Consequently, the light-emitting device ( 1 ) has excellent color gamut (NTSC ratio).

Method of manufacturing color converting member

A color converting member is capable of suppressing deterioration in a phosphor by a simple manufacturing process. A method of manufacturing a color converting member includes a process of molding a resin material into a shape. In the process, molding the resin material and the phosphor integrally into a shape is performed, after kneading a phosphor that converts one color light to another color light into the resin material.

White light emitting device

A white light emitting device of an embodiment includes: a light emitting element having a peak wavelength in a wavelength range from 430 to 470 nm both inclusive, a first fluorescent material formed over the light emitting element, and emitting light having a first peak wavelength of 530 to 580 nm both inclusive and having a first half width, and a second fluorescent material formed over the light emitting element, and emitting light having a second peak wavelength that is longer than the first peak wavelength and ranges from 570 to 620 nm both inclusive, and having a second half width that is 100 nm or less and is equal to or narrower than the first half width.

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT

A semiconductor component includes an optoelectronic semiconductor chip and an optical element arranged on a radiation passage area of the semiconductor chip, wherein the optical element is based on a highly refractive polymer material. 1. A semiconductor component comprising an optoelectronic semiconductor chip and an optical element arranged on a radiation passage area of the semiconductor chip , wherein the optical element is based on a highly refractive polymer material.2. The semiconductor component according to claim 1 , wherein the optical element claim 1 , contains a silicone claim 1 , an epoxide or a hybrid material.3. The semiconductor component according to claim 1 , wherein nanoparticles that increase the refractive index are embedded into the highly refractive polymer material.4. The semiconductor component according to claim 1 , wherein the optical element is convexly curved on a side facing away from the semiconductor chip in a plan view of the semiconductor component.5. The semiconductor component according to claim 1 , wherein the optical element extends in a lateral direction at most as far as a side area of the semiconductor chip.6. The semiconductor component according to claim 1 , further comprising a luminescence conversion substance embedded into the optical element.7. The semiconductor component according to claim 1 , further comprising a luminescence conversion substance embedded into the optical element and a further optical element arranged on that side of the optical element which faces away from the semiconductor chip claim 1 , said further optical element being based on a highly refractive polymer material and being convexly curved.8. The semiconductor component according to claim 7 , wherein a highly refractive connecting layer is arranged between the semiconductor chip and the optical element.9. A method of producing claim 7 , a semiconductor component comprising:a) providing an optoelectronic semiconductor chip;b) applying a molding ...

Remote phosphor led constructions

A white light source includes a short wavelength LED and a phosphor layer that emits light at longer visible wavelengths. A dichroic reflector transmits the longer wavelength light, and reflects some LED light onto the phosphor such that as light travels from the LED to the dichroic reflector it does not pass through the phosphor. The LED may emit blue light, and the dichroic reflector may transmit a second portion of the LED light, such that the light source output light includes both the second portion of the LED light and the longer wavelength phosphor light. The LED may be mounted on a flexible substrate having a cavity region and neighboring region, the LED being mounted in the cavity region. A dielectric layer may be thinner in the cavity region than in the neighboring region, or a hole may extend completely through the dielectric layer in the cavity region.

METHOD FOR MANUFACTURING LED

A method for manufacturing an LED includes steps: providing a base and an LED chip disposed on the base; providing an optical element and disposing the optical element on the base to cover the LED chip; providing a phosphor film and disposing the phosphor film on the optical element; providing a holding plate with capillary holes and disposing the base on the holding plate; providing a mold, wherein the mold and the holding plate cooperatively form a receiving room which receives the base, the LED chip, the optical element and the phosphor film therein; extracting air from the receiving room through the capillary holes of the holding plate, and/or, blowing air toward the phosphor film, whereby the phosphor film is conformably attached onto the optical element; and solidifying the phosphor film on the optical element. 1. A method for manufacturing an LED (light emitting diode) , comprising following steps:providing a base and an LED chip, and disposing the LED chip on the base;providing an optical element and disposing the optical element on the base to cover the LED chip;providing a phosphor film and placing the phosphor film on the optical element;providing a holding plate having a plurality of capillary holes and disposing the base on the holding plate;providing a mold, wherein the mold and the holding plate cooperatively form a receiving room therebetween, and the base, the LED chip, the optical element and the phosphor film are all received in the receiving room;extracting air from the receiving room through the capillary holes of the holding plate, and/or, blowing air towards the phosphor film, whereby the phosphor film is conformably attached onto the optical element; andsolidifying the phosphor film on the optical element.2. The method of claim 1 , wherein a vacuum device is provided claim 1 , the vacuum device abutting against a bottom face of the holding plate to extract the air in the receiving room claim 1 , the air being extracted out of the receiving ...

LED Lens Design with More Uniform Color-Over-Angle Emission

An LED device with improved angular color performance has a silicone lens shaped as a portion of a sphere. The lens is molded over an array of LED dies disposed on the upper surface of a substrate. Phosphor particles are disbursed throughout the material used to mold the lens. The distance between farthest apart edges of the LED dies is more than half of the length that the lens extends over the surface of the substrate. The distance from the top of the lens dome to the surface of the substrate is between 57% and 73% of the radius of the sphere. Shaping the lens as the top two thirds of a hemisphere reduces the non-uniformity in the emitted color such that neither of the CIE color coordinates x or y of the color changes more than 0.004 over all emission angles relative to the surface of the substrate. 1. An apparatus , comprising:a substrate with a upper surface;light emitting diode (LED) dies disposed on the upper surface of the substrate, wherein a surface emitter length is a maximum distance between farthest apart edges of the LED dies;a lens material disposed on the upper surface of the substrate over the LED dies, wherein the lens material is shaped as a portion of a sphere having a dome and a radius, and wherein a dome height extends from a top of the dome to the upper surface of the substrate; andphosphor particles disbursed throughout the lens material, wherein a bottom chord length is a maximum length that the lens material extends over the upper surface of the substrate, wherein the bottom chord length is less than twice the surface emitter length, and wherein the dome height is between 57% and 73% of the radius.2. The apparatus of claim 1 , wherein the upper surface of the substrate is more reflective than are the LED dies.3. The apparatus of claim 1 , wherein the lens material is silicone.4. The apparatus of claim 1 , wherein the LED dies are arranged in a square matrix of LED dies.5. The apparatus of claim 1 , wherein the lens material is molded over ...

Light-emitting device with a tunable light emission spectrum

A light emitting device with a tunable light emission spectrum includes one or more blue LEDs in optical communication with n different red phosphor compositions. Each of the n different red phosphor compositions includes a different amount of strontium (Sr) and comprises light emission in a wavelength range from about 600 nm to about 675 nm. Each of the blue LEDs comprises light emission in a wavelength range from about 400 nm to about 475 nm. An m th different red phosphor composition has a formula Ca 1-x-y Sr x Eu y AlSiN 3 , with 0<x<1 and 0<y<1, and x=x m and 1≦m≦n. A light emission spectrum of the light emitting device comprises a blue spectral component from the one or more blue LEDs and a red spectral component from the n different red phosphor compositions, where the red spectral component comprises n overlapping light emission profiles each having a different peak emission wavelength λ m .

Thin film light emitting diode

Light emitting devices comprise a substrate having a surface and a side surface; a semiconductor structure on the surface of the substrate, the semiconductor structure having a first surface, a second surface and a side surface, wherein the second surface is opposite the first surface, wherein the first surface, relative to the second surface, is proximate to the substrate, and wherein the semiconductor structure comprises a first-type layer, a light emitting layer and a second-type layer; a first and a second electrodes; and a wavelength converting element arranged on the side surface of the semiconductor structure, wherein the wavelength converting element has an open space, and wherein the open space is a portion not covered by the wavelength converting element.

Light Emitting Device

A light emitting device includes a base; a light emitting diode (LED) supported by the base; a layer spaced apart from the LED and including a light emitting material of refraction index n 1 . An enclosure formed by the layer and the base encloses the LED. A medium inside the enclosure between the LED and the layer has a refraction index n 0 <n 1 ; and an optic in contact with the layer and having a refraction index n 2 ≧n 1 . The layer is positioned between the optic and the LED. The optic has, at a surface of contact with the layer, a radius r measured along a ray originating from the LED, and, at an output surface of the optic, another radius R measured along the same ray, such that R≧r·(n 1 /n m ), where n m is a refraction index of a medium adjacent the output surface of the optic.

Light emitting device, display apparatus, and illuminating apparatus

A light emitting device includes an excitation light source element that emits excitation light; a substrate that faces the excitation light source element; a fluorescent layer located on the substrate, the fluorescent layer being excited by the excitation light to emit fluorescence; an optical reflection body disposed on a side surface of the fluorescent layer, the side surface extending in a direction parallel to a stacking direction of the substrate and the fluorescent layer; and a low-refractive-index material layer disposed between the fluorescent layer and the substrate, the low-refractive-index material layer having a refractive index lower than that of the substrate.

LED White Light Source with Remote Photoluminescent Reflecting Converter

The proposed illuminator relates to white-light lamps based on LEDs with remote photoluminescent converters. The illuminator comprises a heat removing base with a radiation output orifice, and the LEDs secured near the periphery of the orifice, with, arranged in series at a distance from the a concave photoluminescent converter layer and a concave light reflector, wherein the converter layer's and light reflector's concavities are oriented towards the LED's and the opening. White light mix of the LEDs' and converter layer's radiation exits via the orifice. The converter layer and reflector may have the form of a truncated ellipsoid of revolution, in particular a sphere, or a paraboloid, with a main axis perpendicular to the plane of the orifice, or a cylinder truncated by the plane of the orifice. The outside reflector' surface may have ribbed heat radiators associated with the heat removing base. 2. The illuminator according to claim 1 , whereinsaid orifice is positioned in a plane,the converter surface and the reflector surface are shaped as axisymmetric figures, truncated by a plane parallel to the plane of said orifice,said axisymmetric figures are represented by an ellipsoid of revolution of a sphere or a paraboloid, andsaid axisymmetric figures are characterized with main axes extending perpendicular to the plane of said orifice.3. The illuminator according to claim 1 , whereinsaid orifice is positioned in a plane,the converter surface and the reflector surface are shaped as surface symmetric figures, truncated by a plane parallel to the plane of said orifice; andsaid symmetric figures are represented by a truncated cylinder with an axis of symmetry extending perpendicular to the plane of said orifice.4. The illuminator according to claim 1 , wherein the heat-removing base includes a protrusion screening a direct discharge of primary radiation into said orifice.5. The illuminator according to claim 1 , wherein said reflector is represented by a heat-removing ...

Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device

A sapphire substrate configured to form a light emitting diode (LED) chip providing light in multi-directions, a LED chip and an illumination device are provided in the present invention. The sapphire substrate includes a growth surface and a second main surface opposite to each other. A thickness of the sapphire substrate is thicker than or equal to 200 micrometers. The LED chip includes the sapphire substrate and at least one LED structure. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with a part of the growth surface without the LED structures. At least a part of light beams emitted from the LED structure pass through the sapphire substrate and emerge from the second main surface. The illumination device includes at least one LED chip and a supporting base. The LED chip is disposed on the supporting base.

Light Emitting Diode Package Structure And Manufacturing Method Thereof

Various examples of a light emitting diode (LED) package structure and a manufacturing method thereof are described. In one aspect, a LED package structure includes a carrier, a LED chip, a first annular barricade, a second annular barricade and a fluorescent encapsulant. The LED chip is electrically connected to the carrier. The first annular barricade and the second annular barricade are disposed around the LED chip, with the second annular barricade disposed between the LED chip and the first annular barricade. The fluorescent encapsulant is disposed on the carrier and at least covers the LED chip and the second annular barricade. The fluorescent encapsulant includes at least a type of phosphor and at least a type of gel with the phosphor distributed over a surface of the LED chip. 1. A light emitting diode (LED) package structure , comprising:a carrier that comprises a carrying region and a peripheral region surrounding the carrying region;at least one LED chip disposed on the carrier in the carrying region and electrically coupled to the carrier;a first annular wall disposed on the carrier in the peripheral region and surrounding the at least one LED chip;a second annular wall disposed within the first annular wall and surrounding the at least one LED chip, a height of the second annular wall is lower than a height of the first annular wall; anda fluorescent encapsulant disposed on the carrier and covering at least the at least one LED chip and the second annular wall, the fluorescent encapsulant comprising at least a phosphor and a gel with the phosphor distributed over a surface of the at least one LED chip.2. The LED package structure of claim 1 , wherein a gap between the first annular wall and the second annular wall defines a groove claim 1 , and wherein the fluorescent encapsulant is filled in the groove.3. The LED package structure of claim 1 , wherein the carrier and at least the first annular wall or the second annular wall are integral parts of a ...

Composition containing quantum dot fluorescent body, molded body of quantum dot fluorescent body dispersion resin, structure containing quantum dot fluorescent body, light-emitting device, electronic apparatus, mechanical device, and method for producing molded body of quantum dot fluorescent body dispersion resin

Provided are a composition that contains a quantum dot fluorescent body and that is able to suppress quenching of the quantum dot fluorescent body, a molded body of a quantum dot fluorescent body dispersion resin, a structure containing a quantum dot fluorescent body, a light-emitting device, an electronic apparatus, or a mechanical device, and a method for producing the molded body of a quantum dot fluorescent body dispersion resin. A quantum dot fluorescent body is dispersed in a cycloolefin (co)polymer that is a dispersion resin to form the composition containing a quantum dot fluorescent body, and the composition containing a quantum dot fluorescent body is molded, forming the molded body of the quantum dot fluorescent body dispersion resin, and a gas barrier layer that reduces the passage of oxygen to the molded body of the quantum dot dispersion resin is formed at a portion or the entirety of the surface of the molded body of the quantum dot fluorescent body dispersion resin, and furthermore, a light-emitting device is configured using the composition containing the quantum dot fluorescent body as a sealing material that seals an LED chip.

Light-emitting device

A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.

Light emitting apparatus and surface light source apparatus having the same

Provided are a light emitting apparatus and a surface light source apparatus having the same. The light emitting apparatus comprises a package body, a first color light emitting part in a first cavity of the package body, and a second color light emitting part in a second cavity of the package body. The package body comprises a plurality of cavities.

Light emitting device package including a substrate having at least two recessed surfaces

Disclosed is a light emitting device package. The light emitting device package includes a substrate comprising a recess, a light emitting chip on the substrate and a first conductive layer electrically connected to the light emitting chip. And the first conductive layer includes at least one metal layer electrically connected to the light emitting chip on an outer circumference of the substrate.

VERTICAL LIGHT EMITTING DIODES

A tunable colour LED module comprises at least two sub-modules, each comprising an LED, a wavelength converting element (WCE) and a reflector cup. The total light emitted by the module comprises light generated from each LED and WCE and the module is configured to emit a total light having a predefined colour chromaticity when activation properties of the LEDs are managed appropriately. The total light may have a broad white emission spectrum. The module combines the benefits of a low cost with uniform chromaticity properties in the far field, and offers long and controlled lifetime at the same time as flexibility and intelligence of tunable colour chromaticity, Colour Rendering Index (CRI) and intensity, either at manufacture or in an end user lighting application. A controlled LED module system comprises a control system for the managing activation properties of the LEDs in the sub-modules. Also described is a method of manufacture. 1. A LED module comprising a first and a second LED sub-module disposed on a high thermal conductivity sub-mount , wherein: a first semiconductor LED for generating light when activated, the first LED being in thermal contact with the sub-mount;', 'a first high thermal conductivity reflector cup, the first LED being disposed in the first reflector cup; and,', 'a first wavelength converting element (WCE) at least partially disposed over a surface of the first LED such that light emitted from the first LED is incident on the first WCE and is re-emitted at a substantially different wavelength;, 'the first LED sub-module comprisesand, a second semiconductor LED for generating light when activated, the second LED being in thermal contact with the sub-mount;', 'a second high thermal conductivity reflector cup, the second LED being disposed in the second reflector cup; and,', 'a second wavelength converting element (WCE) at least partially disposed over a surface of the second LED such that light emitted from the second LED is incident on the ...

Light emitting devices having shielded silicon substrates

Light emitting devices comprise a light emitting component, such as a GaN LED having active material layers supported by a Silicon substrate, which can be a growth substrate, or attached. Phosphor(s) can be disposed relative to the light emitting component to absorb a primary emission, and produce a secondary emission that can be relatively tuned or selected so that their combination produces light of a desired spectrum, such as light appearing white. The Silicon substrate has exposed sidewalls, which can be angled, with respect to planar surfaces of the substrate, and a light reflecting material, such as a diffusely reflective material coats the sidewalls. The reflective material can be opaque to the primary and secondary emissions. If other exposed portions of the Silicon substrate exist and are exposed to primary or secondary light, these other exposed portions can be coated with such light reflecting material.

Wafer level led package and method of fabricating the same

Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.

PACKAGE FOR LIGHT-EMITTING DEVICE

The present invention provides a package for a light-emitting device, including the light-emitting device configured to provide light having a specific wavelength region, electrode pads formed on the light-emitting device, and a phosphor layer formed over the light-emitting device other than regions where the electrode pads are formed and configured to convert the light of the light-emitting device into white light by changing the wavelength of the light provided by the light-emitting device, wherein the phosphor layer is formed in a conformable thickness and is formed in a region wider than an upper region of the light-emitting device other than the regions where the electrode pads are formed. 1. A package for a light-emitting device , comprising:the light-emitting device configured to provide light having a specific wavelength region;electrode pads formed on the light-emitting device; anda phosphor layer formed over the light-emitting device other than regions where the electrode pads are formed and configured to convert the light of the light-emitting device into white light by changing the wavelength of the light provided by the light-emitting device,wherein the phosphor layer is formed in a conformable thickness and is formed in a region wider than an upper region of the light-emitting device other than the regions where the electrode pads are formed.2. The package of claim 1 , wherein the phosphor layer has hardness (Durometer Shore D) of 25 to 75.3. The package of claim 2 , wherein:the phosphor layer is made of a mixture of phosphor, silicon, and a hardner, andhardness of the phosphor layer is controlled by changing an addition ratio (wt %) of the hardner.4. The package of claim 1 , further comprising a heat-blocking layer configured to suppress a transfer of heat from the light-emitting device to the phosphor layer between the light-emitting device and the phosphor layer.5. The package of claim 4 , wherein the heat-blocking layer is made of transparent ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.

Light-emitting device, display apparatus, illumination apparatus, and electricity-generating apparatus

A light-emitting device includes an excitation light source that emits excitation light; a first substrate which is disposed so as to face the excitation light source and on which a fluorescent layer and a first low-refractive-index layer are formed, the fluorescent layer being excited by the excitation light to emit fluorescence; and a barrier that surrounds side surfaces of the fluorescent layer, the side surfaces extending in a stacking direction of the excitation light source and the first substrate. At least a portion of the barrier that faces the fluorescent layer has a light-scattering property. The first low-refractive-index layer is located between the fluorescent layer and the first substrate. The first low-refractive-index layer has a refractive index lower than that of the first substrate.

PHOSPHOR AND LIGHT EMITTING DEVICE HAVING THE SAME

A phosphor and a light emitting device comprising the same are disclosed in embodiments. The phosphor disclosed in an embodiment comprises a phosphor composition of a MDOF:Astructure containing a divalent metal (M), an elements (A) of the active agent, a fluorine or fluor (F) and an oxygen (O), and, wherein the x satisfies a range of 0.001≤x≤0.1, and the y satisfies a range of 1≤y≤5, wherein the M is at least one of Mg, Ca, Sr, Ba and Zn, wherein the D is at least one of Si, Ge, Sn, Ti, Zr and Hf, wherein the F is fluorine, wherein the A comprises at least one of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, wherein the phosphor composition emits red light by a peak wavelength of 400 nm to 470 nm as an excitation wavelength, wherein the red light has a peak wavelength of 655 nm to 670 nm and has a FWHM of less than 20 nm. 1. A phosphor comprising:{'sub': 4', '1-4', 'y', 'x, 'a phosphor composition of a MDOF:Astructure containing a divalent metal (M), an elements (A) of the active agent, a fluorine or fluor (F) and an oxygen (O), and,'}wherein the x satisfies a range of 0.001≤x≤0.1, and the y satisfies a range of 1≤y≤5,wherein the M is at least one of Mg, Ca, Sr, Ba and Zn,wherein the D is at least one of Si, Ge, Sn, Ti, Zr and Hf,wherein the F is fluorine,wherein the A comprises at least one of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb,wherein the phosphor composition emits red light by a peak wavelength of 400 nm to 470 nm as an excitation wavelength, andwherein the red light has a peak wavelength of 655 nm to 670 nm and has a FWHM of less than 20 nm.2. The phosphor of claim 1 , wherein the M is Mg claim 1 , and wherein the D is Ge claim 1 , and wherein the A comprises Mn claim 1 ,{'sup': '4+', 'wherein the Mn includes Mn of tetravalent manganese.'}3. A phosphor comprising: a structure of composition of MgGeOF: Mn claim 1 ,wherein the x satisfies a range of 0.001≤x≤0.1, and the y satisfies a range of 1≤y≤5,wherein the composition has a peak ...

Manufacturing method for light-emitting device

A light-emitting device production method includes a positioning step of positioning, in a light-emitting element, a sealing member at least containing a silicone resin semi-cured at a room temperature (T 0 ) by primary cross-linking and a fluorescent material, the silicone resin decreasing in viscosity reversibly in a temperature region between the room temperature (T 0 ) and a temperature lower than a secondary cross-linking temperature (T 1 ), and being totally cured non-reversibly in a temperature region equal to or higher than the secondary cross-linking temperature (T 1 ).

Led device manufacturing method and fluorescent material-dispersed solution used in same

The present invention addresses the problem of providing an LED device having no color unevenness in light emission. In order to solve the problem, this LED device manufacturing method includes: a step of providing an LED chip-mounted package; a step of film-forming a fluorescent material layer by applying a fluorescent material-dispersed solution to a emission surface of the LED chip, said fluorescent material-dispersed solution containing a solvent, a fluorescent material, clay minerals and porous inorganic particles, and by drying the fluorescent material-dispersed solution; and a step of film-forming a wavelength conversion section by applying, to the fluorescent material layer, a precursor solution having a precursor of a light transmissive ceramic dispersed in a solvent, and by firing the layer, said wavelength conversion section being composed of a light transmissive ceramic layer having the fluorescent material, the clay minerals and the porous inorganic particles dispersed therein.

OPTICAL AND OPTOELECTRONIC ASSEMBLIES INCLUDING MICRO-SPACERS, AND METHODS OF MANUFACTURING THE SAME

The present disclosure describes optical and optoelectronic assemblies that, in some cases, include screen-printed micro-spacers, as well as methods for manufacturing such assemblies and modules. For example, micro-spacers can be applied on a first optical element layer, and a second optical element layer can be provided on the first micro-spacers. By providing the second optical element layer on the first micro-spacers, the second optical element layer and the first optical element layer can be separated from one another by air or vacuum gaps each of which is laterally surrounded by a portion of the first micro-spacers. 1. A method comprising:applying first micro-spacers onto a first optical element layer, wherein the first micro-spacers are laterally separated from one another; andproviding a second optical element layer on the first micro-spacers.2. The method of wherein claim 1 , by providing the second optical element layer on the first micro-spacers claim 1 , the second optical element layer and the first optical element layer are separated from one another by air or vacuum gaps each of which is laterally surrounded by a portion of the first micro-spacers.3. The method of wherein the first micro-spacers are formed by a screen-printing claim 1 , auger valve dispensing or jetting technique.4. The method of including providing second micro-spacers onto the second optical element layer claim 1 , wherein the second micro-spacers are formed by a screen-printing claim 1 , auger valve dispensing or jetting technique.5. The method of wherein applying the first micro-spacers includes applying a die-cut pressure sensitive layer to the first optical element layer.6. The method of wherein at least one of the first or second optical element layers comprises an IR absorber layer claim 1 , a dielectric optical filter layer claim 1 , or an optical interference filter layer.7. The method of wherein the first micro-spacers are composed of an adhesive material.8. The method of ...

Light Emitting Diode Package Structure and Fabrication Method

A light emitting diode package structure includes: a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; a second reflecting material layer surrounding the first transparent material layer, the interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip; and a wavelength conversion material layer covered over the above structure. 1. A light emitting diode package structure , comprising:a first reflecting material layer with through holes;a flip chip over the first reflecting material layer, with electrodes inlaid in the through holes of the first reflecting material layer;a first transparent material layer surrounding a side surface of the flip chip other than the electrodes;a second reflecting material layer surrounding the first transparent material layer, an interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip; anda wavelength conversion material layer.2. The light emitting diode package structure of claim 1 , wherein: the upper surface of the second reflecting material layer is flush with the upper surfaces of the first transparent material layer and the flip chip claim 1 , and makes the aforesaid upper surfaces into a co-plane.3. The light emitting diode package structure of claim 2 , wherein: the wavelength conversion material layer is on the co-plane.4. The light emitting diode package structure of claim 1 , wherein: the inner edge of the second reflecting material layer bottom contacts with the side surface of the ...

DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DEVICE

Discussed is a display device using a semiconductor light emitting device. In a display device including a plurality of semiconductor light emitting devices, each of the plurality of semiconductor light emitting devices includes a first conductive semiconductor layer, a second conductive semiconductor layer overlapped with the first conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode deposited on the first conductive semiconductor layer, and a second electrode deposited on the second conductive semiconductor layer, wherein the first electrode is extended toward an adjoining semiconductor light emitting device to be electrically connected to the adjoining semiconductor light emitting device. 1. A display device comprising a plurality of semiconductor light emitting devices , wherein each of the plurality of semiconductor light emitting devices comprises:an n-type semiconductor layer;a p-type semiconductor layer overlapped with the n-type semiconductor layer;an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer;an n-type electrode deposited on the n-type semiconductor layer; anda p-type electrode deposited on the p-type semiconductor layer,wherein the n-type electrode is formed as an electrode line extending toward an adjoining semiconductor light emitting device to be electrically connected to the adjoining semiconductor light emitting device, andwherein the electrode line is overlapped with one surface of an n-type semiconductor layer of the adjoining semiconductor light emitting device.2. The display device of claim 1 , wherein the plurality of semiconductor light emitting devices further comprises an insulating layer formed to cover the n-type electrode.3. The display device of claim 2 , wherein the insulating layer comprises a black or white insulator.4. The display device of claim 1 , wherein the ...

WHITE LIGHT EMITTING DIODE, MANUFACTURING METHOD AND PACKAGING MATERIAL THEREOF

A white light emitting diode comprising a substrate layer, two conductive frames, a light emitting unit, two conductive wires, and a packaging element is provided. The substrate layer is made from a curing reaction of first mixture, and the first mixture includes a curable resin, a curing agent, a phosphor material, and a modified thermal conductive nano-material, wherein the modified thermal conductive nano-material is made from a thermal conductive nano-material and a silane compound. The packaging element is made from a curing reaction of second mixture, and the second mixture includes a curable resin, a curing agent, a phosphor material, and a modified thermal conductive nano-material, wherein the modified thermal conductive nano-material is made from a thermal conductive nano-material and a silane compound. The chip-type white light emitting diode has a good heat-dissipating effect and a good luminous efficiency without additional heat dissipation fins. In addition, the manufacturing method of the chip-type white light emitting diode is a relatively simple process for mass production. 1. A white light emitting diode , comprising:a substrate layer, being made from a curing reaction of a first mixture, and the first mixture includes a curable resin, a curing agent, a phosphor material, and a modified thermal conductive nano-material, wherein the modified thermal conductive nano-material being made from a thermal conductive nano-material and a silane compound;two conductive frames, each conductive frame having an end portion connected with the substrate layer;a light emitting unit, disposed on a surface of the substrate layer;two conductive wires, connecting to the light emitting unit respectively, and each conductive wire connecting to the corresponding conductive frame; anda packaging element, covering the conductive wires and the light emitting unit, and the packaging element being made from a curing reaction of a second mixture, and the second mixture includes ...

Light emitting diode (led) components including contact expansion frame and methods of fabricating same

A Light Emitting Diode (LED) component includes an LED die and a contact expansion frame having an expanded anode contact and/or an expanded cathode contact. A patterned solder mask is provided on the contact expansion frame that exposes a portion of the outer face of the expanded anode contact and/or a portion of the outer face of the expanded cathode contact. A solder layer is provided on the portion of the outer face of the expanded anode contact and on the portion of the outer face of the expanded cathode contact. Multiple die components and related fabrication methods are also described.

LIGHT EMITTING DEVICE HAVING DUAL SEALING RESINS

Provided is a light emitting device with improved light extracting efficiency and further higher heat releasing performance. A light emitting device includes a planar lead frame having a first lead and a second lead, and includes a light emitting element mounted on the first lead, a resin frame surrounding a periphery of the light emitting element, a first sealing resin filled in the inner side of the resin frame and sealing the light emitting element, and a second sealing resin covering the resin frame and the first sealing resin. Lower end of inner surface of the resin frame is arranged only on the first lead, and at an outside of the resin frame, and the second resin member covers at least a part of the first lead and the second lead. Of the back-surface of the first lead, a region directly under the blight emitting element is exposed. 120-. (canceled)21. A method of manufacturing a light emitting device , the method comprising:providing a planar lead frame having a first lead and a second lead;mounting a light emitting element on the first lead;electrically connecting the light emitting element to the first lead and the second lead;forming a resin frame surrounding the light emitting element so that a lower end of an inner surface of the resin frame is located only on the first lead; andfilling a first sealing resin in an inner side of the resin frame and sealing the light emitting element with the first sealing resin.22. The method of manufacturing a light emitting device according to claim 21 , the method further comprising disposing a second sealing resin to cover the resin frame and the first sealing resin claim 21 , and at an outer side of the resin frame claim 21 , to cover at least a part of the first lead and at least a part of the second lead.23. The method of manufacturing a light emitting device according to claim 21 , wherein the resin frame is formed so that a lower end of the outer surface of the resin frame is located on the first lead.24. The ...

LAMINATED PRINTED COLOR CONVERSION PHOSPHOR SHEETS

Embodiments are related generally to electronic displays and, more particularly, to emissive displays made with transparent sheets having phosphor dots on the surface for the purpose of color conversion. 1. An emissive display using printed phosphor color conversion sheets , the display comprising:a backplane comprising a top surface with a first number of light emitting diode (LED) devices aligned in an array; and,a first transparent substrate attached to the top surface of the backplane, wherein the first transparent substrate includes a top surface having a second number of printed phosphor dots, and wherein the second number of printed phosphor dots overly a subset of the first number of the LED devices.2. The display of claim 1 , wherein:the first number of LED devices are each configured to emit light in a given spectrum; andthe second number of printed phosphor dots are each configured to emit light in a visible spectrum.3. The display of claim 1 , wherein:the first number of LED devices are each configured to emit light in a visible spectrum with a first color;the second number of printed phosphor dots are each configured to emit light in the visible spectrum with a second color different from the first color; andthe first number is greater than the second number.4. The display of claim 1 , wherein:the first number of LED devices are each configured to emit light in a visible spectrum with a first color; anda first subset of the second number of printed phosphor dots are each configured to emit light in the visible spectrum with a second color, and a second subset of the second number of printed phosphor dots are each configured to emit light in the visible spectrum with a third color, and wherein the first color is different than the second color, and the third color is different from both the first color and the second color.5. The display of claim 4 , wherein the first transparent substrate is organized into a plurality of pixels claim 4 , each pixel ...

LIGHT EMITTING DEVICE AND LIGHT SOURCE

A light emitting device includes at least one light emitting element to emit a first light having a first peak emission wavelength in a range of 420 nm to 480 nm and at least one fluorescent material to convert the first light to a second light having a second fluorescent peak wavelength in a range of 610 nm to 750 nm. The second light has chromaticity existing in an enclosed area in a CIE 1931 chromaticity diagram in which chromaticity is defined by x and y coordinates. The enclosed area is enclosed with a first straight line, a second straight line, a third straight line, and a curved line. 1. A light emitting device comprising:at least one first light emitting element to emit a first light having a first peak emission wavelength in a range of 420 nm or greater and 480 nm or less; andat least one fluorescent material to convert the first light to a second light having a second peak emission wavelength in a range of 610 nm or greater and 750 nm or less, the second light having chromaticity existing in an enclosed area in a CIE 1931 chromaticity diagram in which chromaticity is defined by x and y coordinates, the enclosed area being enclosed with a first straight line, a second straight line, a third straight line, and a curved line, the first straight line connecting a first point at which x is equal to 0.666 and y is equal to 0.334 and a second point at which x is equal to 0.643 and y is equal to 0.334, the second straight line connecting the second point and a third point at which x is equal to 0.576 and y is equal to 0.291, the third straight line connecting the third point and a fourth point at which x is equal to 0.737 and y is equal to 0.263, the curved line connecting the fourth point and the first point.2. The light emitting device according to claim 1 , wherein in an emission spectrum of the light emitting device claim 1 , when a maximum intensity of the second peak emission wavelength is assumed to 1 claim 1 , a relative intensity of the first peak ...

SEMICONDUCTOR LIGHT EMITTING ELEMENT WITH DISPERSIVE OPTICAL UNIT AND ILLUMINATION DEVICE COMPRISING THE SAME

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base. 1. A semiconductor light emitting element , comprising:a transparent substrate, having a support surface and a second main surface disposed opposite to each other;a light emitting diode (LED) structure disposed on the support surface, a first main surface, where light emitted from, being formed by the LED structure and at least a part of the support surface without the LED structure, and at least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface; andan optical unit disposed on the first main surface, the optical unit comprising a covering side facing the transparent substrate, and a light dispersion side corresponding to the covering surface;wherein the optical unit further comprises at least one optical structure disposed on the light dispersion side to disperse light received from the covering side to different directions corresponding to wavelength of the light.2. The semiconductor light emitting element of claim 1 , further comprising:a wavelength conversion layer sandwiched by the optical ...

METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE

A method for manufacturing a light-emitting device includes: providing first and second substrates each including a plurality of packages, the packages each having a recess and a light-emitting element mounted in the recess; performing potting by supplying a resin member containing particles of a fluorescent material into the recess of each of the packages of the first substrate; spreading the resin member in the recess of each of the packages of the first substrate; measuring a height of an upper surface of the resin member spread in the recess of at least one of the packages of the first substrate; and adjusting a quantity of the resin member to be supplied into the recess of each of the packages of the second substrate depending on the measured height of the upper surface of the resin member. 1. A method for manufacturing a light-emitting device , the method comprising:providing a first substrate and a second substrate each including a plurality of packages, the packages each having a recess and a light-emitting element mounted in the recess;performing potting by supplying a resin member containing particles of a fluorescent material into the recess of each of the packages of the first substrate;spreading the resin member in the recess of each of the packages of the first substrate;measuring a height of an upper surface of the resin member spread in the recess of at least one of the packages of the first substrate; andadjusting a quantity of the resin member to be supplied into the recess of each of the packages of the second substrate depending on the measured height of the upper surface of the resin member spread in the recess of the at least one of the packages of the first substrate.2. The method for manufacturing a light-emitting device according to claim 1 , whereinthe spreading of the resin member includes heating the first substrate including the resin member.3. The method for manufacturing a light-emitting device according to claim 2 , whereina ...

METHOD OF MANUFACTURING LIGHT EMITTING MODULE

A method of manufacturing a light emitting module including a substrate; a light emitting element having an electrode formation surface comprising a positive and negative pair of element electrodes, and a light emitting surface on the side opposite to the electrode formation surface; a wiring electrode connected to the element electrode; and a light reflective resin layer, the method of manufacturing a light emitting module including: placing the light emitting element, on a support member, in a state with the electrode formation surface facing upward, and the light emitting surface facing downward; forming a coating layer on the support member, surrounding the light emitting element; forming the wiring electrode extending from the element electrode over the coating layer; forming the light reflective resin layer on the wiring electrode and the coating layer; joining the substrate on top of the light reflective resin layer; removing the support member; and removing the coating layer. 1. A method of manufacturing a light emitting module includinga substrate,a light emitting element having an electrode formation surface comprising a positive and negative pair of element electrodes, and a light emitting surface on a side opposite to the electrode formation surface,a wiring electrode connected to the element electrode, anda light reflective resin layer, whereinthe method of manufacturing the light emitting module comprising:placing the light emitting element on a support member, in a state with the electrode formation surface facing upward, and the light emitting surface facing downward;forming a coating layer on the support member, surrounding the light emitting element;forming the wiring electrode extending from the element electrode over the coating layer;forming the light reflective resin layer on the wiring electrode and the coating layer;joining the substrate on top of the light reflective resin layer,removing the support member; andremoving the coating layer.2. ...

LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE MODULE

A light emitting diode package including a housing, first and second light emitting diode chips disposed in the housing, and a wavelength conversion part including a phosphor to absorb light emitted from the first light emitting diode chip and emit light having a different wavelength than that emitted from the first light emitting diode chip, in which light emitted from the first light emitting diode chip has a shorter wavelength than light emitted from the second light emitting diode chip, the wavelength conversion part is configured to emit red light having a peak wavelength of 580 nm to 700 nm and exhibiting at least three peaks at a wavelength of 600 nm to 660 nm, and the light emitting diode package is configured to emit white light by mixing light emitted from the first light emitting diode chip, the second light emitting diode chip, and the wavelength conversion part. 1. A light emitting diode package comprising:a housing;a first light emitting diode chip and a second light emitting diode chip disposed in the housing; anda wavelength conversion part comprising a phosphor configured to absorb light emitted from the first light emitting diode chip and emit light having a different wavelength than that emitted from the first light emitting diode chip,wherein:light emitted from the first light emitting diode chip has a shorter wavelength than light emitted from the second light emitting diode chip;the wavelength conversion part is configured to emit red light having a peak wavelength of 580 nm to 700 nm and exhibiting at least three peaks at a wavelength of 600 nm to 660 nm; andthe light emitting diode package is configured to emit white light by mixing light emitted from the first light emitting diode chip, the second light emitting diode chip, and the wavelength conversion part.2. The light emitting diode package according to claim 1 , wherein the first light emitting diode chip and the second light emitting diode chip are configured to emit blue light and ...

LIGHT EMITTING DIODE APPARATUS AND METHOD FOR MANUFACTURING THE SAME

A method for manufacturing a light emitting diode (LED) apparatus is provided. The method includes forming a plurality of color filters on a glass layer, forming a plurality of light leakage preventing films on the glass layer in a space between the plurality of color filters; forming a plurality of conductive materials on a surface of each of the plurality of light leakage preventing films opposite to the glass layer; and bonding a plurality of light emitting diodes with the plurality of conductive materials to correspond to the plurality of color filters, respectively. 1. A method for manufacturing a light emitting diode (LED) apparatus , the method comprising:forming a plurality of color filters on a glass layer;forming a plurality of light leakage preventing films on the glass layer in a space between the plurality of color filters;forming a plurality of conductive materials on a side of each of the plurality of light leakage preventing films opposite to the glass layer; andbonding a plurality of light emitting diodes with the plurality of conductive materials to correspond to the plurality of color filters, respectively.2. The method of claim 1 , wherein the forming the plurality of light leakage preventing films comprises:forming the plurality of light leakage preventing films on the glass layer;etching the plurality of light leakage preventing films to a first height; andetching a remaining area, excluding a predetermined area of the plurality of light leakage preventing films, to a second height shorter than the first height and forming the plurality of light leakage preventing films to have a shape in which the predetermined area is protruded upward, andwherein the forming the plurality of conductive materials on each of the plurality of light leakage preventing films comprises:forming the plurality of conductive materials on a surface of an area protruded from the plurality of light leakage preventing films and a surface of an area within a non-protruded ...

DISPLAY DEVICE

A display device is provided. The display device includes a first substrate, a first light-emitting element, a second substrate, a light conversion layer and a light filter layer. The first light-emitting element is disposed on the first substrate. The second substrate is opposite to the first substrate. The light conversion layer is disposed on the second substrate and corresponds to the first light-emitting element. The light filter layer is disposed on the second substrate, wherein the transmittance of the light filter layer is lower than or equal to 1% for light with a wavelength shorter than 430 nm. 1. A display device , comprising:a first substrate;a first light-emitting element disposed on the first substrate;a second substrate disposed opposite to the first substrate;a light conversion layer disposed on the second substrate, and corresponding to the first light-emitting element; anda light filter layer disposed on the second substrate, wherein the transmittance of the light filter layer is lower than or equal to 1% for light with a wavelength shorter than 430 nm.2. The display device as claimed in claim 1 , wherein the light filter layer is disposed on one side of the second substrate which is adjacent to the first substrate.3. The display device as claimed in claim 2 , further comprising an anti-reflective layer and a circular polarizer claim 2 , wherein the circular polarizer is disposed between the anti-reflective layer and the light filter layer.4. The display device as claimed in claim 1 , further comprising a color filter layer claim 1 , wherein the color filter layer is disposed between the light conversion layer and the light filter layer claim 1 , and the color filter layer corresponds to the first light-emitting element.5. The display device as claimed in claim 1 , wherein the light filter layer is disposed on one side of the second substrate which is away from the first substrate.6. The display device as claimed in claim 5 , further comprising an ...

Light emitting device and method of manufacturing same

A method of manufacturing a light emitting device includes: providing a semiconductor stack including a first semiconductor layer and a second semiconductor layer; forming light emitting cells by forming grooves in column and row directions; exposing a portion of the first semiconductor layer from the second semiconductor layer in each light emitting cell; forming a first insulation layer having a first hole on the light emitting cells and the grooves; forming a wiring electrode to be in electrical connection with the first semiconductor layer at the first hole in each light emitting cell; forming a second hole in the first insulation layer; forming a second electrode to be in electrical connection with the second semiconductor layer at the second hole; thinning the first semiconductor layer; and exposing the first insulation layer from the first semiconductor layer at the grooves while roughening the surface of the first semiconductor layer.

LIGHT EMITTING DEVICE

A light emitting device includes a package having a recess which includes a bottom surface having corners. The package includes a first electrode, a second electrode, and a resin portion. The first electrode is provided at a first part of the bottom surface. The second electrode is provided at a second part of the bottom surface. The resin portion is provided between the first electrode and the second electrode at a third part of the bottom surface. A protection element is provided on the bottom surface. A light reflective material covers the bottom surface except for an uncovered region to cover the protection element and the corners of the bottom surface and uncovers an uncovering region of the bottom surface. The uncovered region is defined by linear lines and curved lines connecting the linear lines. A light emitting element is provided in the uncovered region on the bottom surface. 1. A light emitting device comprising: a first electrode provided at a first part of the bottom surface;', 'a second electrode provided at a second part of the bottom surface; and', 'a resin portion provided between the first electrode and the second electrode at a third part of the bottom surface;, 'a package having a recess which includes a bottom surface having corners, the package comprisinga protection element provided on the bottom surface;a light reflective material covering the bottom surface except for an uncovered region on the bottom surface to cover the protection element and the corners of the bottom surface, the uncovered region being defined by linear lines and curved lines connecting the linear lines; anda light emitting element provided in the uncovered region on the bottom surface.2. The light emitting device according to claim 1 ,wherein the light emitting element has a substantially rectangular shape viewed in a first direction perpendicular to the bottom surface, the substantially rectangular shape having sides,wherein each of the linear line is substantially ...

LIGHT EMITTING DEVICE

A light emitting device includes a base member, a light emitting element, a wire, a protective film, first and second resin members, and a light shielding portion. The base member has a conductive member. The wire connects the light emitting element and the conductive member. The protective film covers the conductive member to be spaced apart from a portion of a connecting portion. The first resin member continuously covers at least a portion of each of the protective film, a portion of the conductive member around the connecting portion, and the wire. The first resin member contains first light reflecting particles to reflect light emitted by the light emitting element. The second resin member covers the light emitting element and the first resin member. The light shielding portion is disposed on the base member and disposed on a line connecting the light emitting element and the first resin member. 1. A light emitting device comprising:a base member having a conductive member containing silver;a light emitting element disposed on the base member;a wire electrically connecting the light emitting element and the conductive member;a protective film covering the conductive member so as to be spaced apart at least from a portion of a connecting portion connecting the wire and the conductive member; anda first resin member continuously covering at least a portion of each of the protective film, a portion of the conductive member around the connecting portion, and the wire, the first resin member containing first light reflecting particles to reflect light emitted by the light emitting element;a second resin member covering the light emitting element and the first resin member; anda light shielding portion disposed on at least a portion of a surface of the base member, the light shielding portion being disposed on a line connecting the light emitting element and the first resin member.2. The light emitting device according to claim 1 , wherein a material of the second ...

SEMICONDUCTOR NANOPARTICLES, METHOD OF PRODUCING THE SEMICONDUCTOR NANOPARTICLES, AND LIGHT-EMITTING DEVICE

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less. 116.-. (canceled)17. Semiconductor nanoparticles , comprising:Ag, In, Ga, and S,wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less,wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, andwherein the semiconductor nanoparticles have an average particle diameter of 10 nm or less.18. The semiconductor nanoparticles according to claim 17 , wherein the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.2 to 0.9.19. The semiconductor nanoparticles according to claim 17 , wherein a ratio of a number of Ag atoms to a total number of Ag claim 17 , In claim 17 , and Ga atoms is from 0.05 to 0.55.20. The semiconductor nanoparticles according to claim 18 , wherein a ratio of a number of Ag atoms to a total number of Ag claim 18 , In claim 18 , and Ga atoms is from 0.05 to 0.55.21. The semiconductor nanoparticles according to claim 17 , whereinthe ratio of the number of Ag atoms to the total number of Ag, In, and Ga atoms is from 0.3 to 0.55, andthe ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.5 to 0.9.22. The semiconductor nanoparticles according to claim 17 , wherein the ratio of the number of Ag atoms to the total number of Ag claim 17 , In claim 17 , and Ga atoms is from 0.05 to 0.27 claim 17 , andthe ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.25 to 0.75.23. Core-shell semiconductor nanoparticles ...

Method of manufacturing light emitting device and light emitting device

A method of manufacturing a light emitting device includes: mounting a light emitting element in a package in which a recess is defined, the light emitting element being mounted on a bottom surface defining the recess; forming a first reflecting layer by covering lateral surfaces defining the recess with a first resin containing a first reflecting material; forming a second reflecting layer covering the bottom surface defining the recess, wherein the step of forming the second reflecting layer comprises settling the second reflecting material in the second resin by a centrifugal force so as to form (i) a layer containing a second reflecting material on the bottom surface defining the recess, and (ii) a light-transmissive layer above the layer containing the second reflecting material; and disposing a phosphor-containing layer on the second reflecting layer and the light emitting element, the phosphor-containing layer comprising a third resin that contains a phosphor.

SINGULATON OF LIGHT EMITTING DEVICES BEFORE AND AFTER APPLICATION OF PHOSPHOR

A two-stage singulation process is used in the fabrication of phosphor coated light emitting elements. Prior to the application of the phosphor coating, the individual light emitting elements are singulated using a laser dicing process (); after application of the phosphor coating (), the phosphor coated light emitting elements are singulated using a mechanical dicing process (). Before laser dicing of the light emitting elements, the wafer is positioned on a piece of dicing- or die-attach-tape held by a frame; after laser dicing, the tape is stretched () to provide space between the individual light emitting elements that allows for the wider kerf width of the subsequent mechanical dicing () after application of the phosphor coating (). 1. A method comprising:mounting a wafer comprising a plurality of light emitting elements each having a top surface opposite a bottom surface, wherein the bottom surface is connected to a stretchable film;dicing the wafer to singulate the light emitting elements;after dicing the wafer stretching the stretchable film to provide space between each of the light emitting elements;after stretching the stretchable film disposing a filler material in the space between the light emitting elements;after disposing the filler material coating the light emitting elements with a wavelength conversion material to provide a sheet of phosphor coated light emitting elements; andafter coating the light emitting elements dicing the sheet to singulate the phosphor coated light emitting elements.2. The method of claim 1 , including attaching a substrate to the sheet.3. The method of claim 2 , wherein the substrate includes a glass sheet adhered to the phosphor material.4. The method of claim 1 , wherein the wafer is diced using a laser cutting process.5. The method of claim 1 , wherein the sheet is diced using a mechanical cutting process.6. (canceled)7. The method of claim 1 , including wherein the filler material is disposed even with the top surface ...

LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

There is provided a light-emitting device comprising a light-emitting element. The light-emitting device of the present invention comprises an electrode part for the light-emitting element; a reflective layer provided on the electrode part; and the light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer, wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer, wherein the electrode part serves as a supporting layer for supporting the light-emitting element, and wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element. 1. A light-emitting device comprising a light-emitting element comprising:an electrode part for the light-emitting element;a reflective layer provided on the electrode part; andthe light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer,wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer,wherein the electrode part serves as a supporting layer for supporting the light-emitting element,wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element, andwherein the electrode part is provided as a wet plating layer, and the reflective layer is provided as a dry plating layer.2. (canceled)3. The light-emitting device according to claim 1 , wherein the electrode part is thicker than the light-emitting element.4. The light-emitting device according to claim 1 , further comprising a first insulating part provided around the electrode part and a second insulating part provided around the light-emitting ...

Contacting an Optoelectronic Semiconductor Component Through a Conversion Element and Corresponding Optoelectronic Semiconductor Component

A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

PROJECTOR COLOR WHEEL AND PROJECTOR ILLUMINATION DEVICE

A projector color wheel, including: 1. A projector color wheel , comprising:a substrate;a first film for changing a wavelength of light, provided on the substrate, including a first material including a plurality of first quantum dots of a first quantum dot type, the plurality of first quantum dots being configured to emit light according to a first emission profile with at least a first emission peak at a first emission wavelength when light of a predetermined wavelength incidents;a second film for changing a wavelength of light, provided on the substrate, including a second material, the second material being configured to emit light according to a second emission profile with at least a second emission peak at a second emission wavelength when light of the predetermined wavelength incidents;wherein each of the first film and the second film includes a binding material; andwherein the first emission wavelength is larger than the second emission wavelength.2. The projector color wheel according to claim 1 , wherein the first and the second film are arranged on each other on the substrate.3. The projector color wheel according to claim 1 , wherein the first and the second film are provided as separate sections on the substrate.4. The projector color wheel according to claim 1 , wherein the second material includes cerium doped yttrium aluminum garnet.5. The projector color wheel according to claim 1 , wherein the second material includes a plurality of second quantum dots of a second quantum dot type.6. The projector color wheel according to claim 2 , further comprising:a diffusion film provided as a separate section on the substrate for diffusing incident light.7. The projector color wheel according to claim 1 , wherein the first quantum dot type has a structure which includes:a first core layer including a first quantum dot material;a first shelling layer including a second quantum dot material formed on the first core layer; anda first oxide layer including a ...

QUANTUM DOT, MANUFACTURING METHOD OF THE DOT, AND COMPACT, SHEET MEMBER, WAVELENGTH CONVERSION MEMBER AND LIGHT EMITTING APPARATUS USING THE QUANTUM DOT

To provide a quantum dot and manufacturing method of the dot particularly capable of reducing organic residues adhering to the quantum dot surface and of suppressing the black discoloration occurrence of a layer including the quantum dot positioned immediately above a light emitting device, and a compact, sheet member, wavelength conversion member and light emitting apparatus with high luminous efficiency using the quantum dot, a quantum dot of the present invention has a core portion including a semiconductor particle, and a shell portion with which the surface of the core portion is coated, and is characterized in that a weight reduction up to 490° C. is within 75% in a TG-DTA profile. Further, the quantum dot of the invention is characterized in that oleylamine (OLA) is not observed in GC-MS qualitative analysis at 350° C. 1. A method of manufacturing a quantum dot having a core portion including a semiconductor particle ,wherein a quantum dot solution is prepared by including a step of synthesizing the semiconductor particle to form the core portion, and an ultracentrifuge is used in a step of cleaning the quantum dot solution.2. The method of manufacturing a quantum dot according to claim 1 , wherein the method includes a step of coating the surface of the core portion with a shell portion after the step of forming the core portion claim 1 , and shifts to the cleaning step after coating the surface of the core portion with the shell portion.3. The method of manufacturing a quantum dot according to claim 2 , wherein the shell portion is formed of a first shell portion coating the core portion claim 2 , and a second shell portion coating the surface of the first shell portion. This is a Divisional of U.S. patent application Ser. No. 15/302,048, filed Oct. 5, 2016, which is a National Stage Application of PCT/JP2015/060612, filed Apr. 3, 2015, which claims the benefit of Japanese Patent Application No. 2014-079562, filed Apr. 8, 2014. The disclosure of each of the ...

Fluorescent Glass For Light Emitting Diode And Manufacturing Method Thereof

The present disclosure is related to a fluorescent glass for a light emitting diode and a manufacturing method thereof. The fluorescent glass for the light emitting diode includes a glass powder and a fluorescent powder, wherein the glass powder and the fluorescent powder are mixed to form a fluorescent glass, the material for manufacturing the glass powder comprises silicon dioxide with 20 wt % to 37 wt %, diboron trioxide with 31 wt %-47 wt % and calcium oxide with 16 wt %˜35 wt %, and the material of the fluorescent powder is selected from one of Ce-YAG, LuAG, silicate, and nitrides/oxynitrides fluorescent powder. The fluorescent glass of the present disclosure is formed by mixing and sintering the glass powder and the fluorescent powder and has low sintering temperature, so as to avoid the deterioration of color of the fluorescent powder due to high temperature. Therefore, the fluorescent glass of the present disclosure has good transparency, and the light emitting diode applying this fluorescent glass has good lighting efficiency. 1. A fluorescent glass for a light emitting diode , comprising a glass powder and a fluorescent powder , wherein the glass powder and the fluorescent powder are mixed to form a fluorescent glass , the material for manufacturing the glass powder comprises silicon dioxide with 20 wt % to 37 wt % , diboron trioxide with 31 wt %˜47 wt % and calcium oxide with 16 wt %˜35 wt % , and the material of the fluorescent powder is selected from one of Ce-YAG , LuAG , silicate , and nitrides/oxynitrides fluorescent powder.2. The fluorescent glass for the light emitting diode as claimed in claim 1 , wherein the material for manufacturing the glass powder further comprises magnesium oxide or zinc oxide claim 1 , the weight percent of magnesium oxide or zinc oxide is between 0 wt % and 17 wt %.3. The fluorescent glass for the light emitting diode as claimed in claim 2 , wherein the material for manufacturing the glass powder further comprises aluminum ...

QUANTUM DOT, MANUFACTURING METHOD OF THE DOT, AND COMPACT, SHEET MEMBER, WAVELENGTH CONVERSION MEMBER AND LIGHT EMITTING APPARATUS USING THE QUANTUM DOT

A quantum dot has a property that, when subjected to a GC-MS qualitative analysis at 350° C., octadecene (ODE) is present while oleylamine (OLA) is absent. A light emitting apparatus has a fluorescent layer covering and disposed immediately above a light emitting side of a light emitting device. The fluorescent layer, which is disposed immediately above the light emitting device, is formed of a resin with quantum dots dispersed therein. Deteriorations of light emission intensities at respective RGB peak wavelengths of the light emitting device after light emission for 1000 hours at 85° C. are all within 30% of a light emission intensity of the light emitting device before the light emission. Black discoloration caused by the deteriorations of the light emission intensities at the respective RGB peak wavelengths of the light emitting device does not occur in the resin. 1. A quantum dot having a property that , when subjected to a GC-MS qualitative analysis at 350° C. , octadecene (ODE) is present while oleylamine (OLA) is absent.2. A light emitting apparatus having a fluorescent layer covering and disposed immediately above a light emitting side of a light emitting device ,wherein the fluorescent layer, which is disposed immediately above the light emitting device, is formed of a resin with quantum dots dispersed therein,wherein deteriorations of light emission intensities at respective RGB peak wavelengths of the light emitting device after light emission for 1000 hours at 85° C. are all within 30% of a light emission intensity of the light emitting device before the light emission, andwherein black discoloration caused by the deteriorations of the light emission intensities at the respective RGB peak wavelengths of the light emitting device does not occur in the resin. The present application is a continuation of U.S. patent application Ser. No. 15/302,048, filed Oct. 5, 2016, which is a national stage entry of International Pat. Appl. No. PCT/JP2015/060612, filed ...

LED WITH THERMO-RESPONSIVE BLACK-BODY LINE DIMMING

The invention provides a lighting device () comprising a light source () configured to generate light source light () and a light converter element (), wherein the light converter element () comprises a light transmissive matrix (), wherein the light transmissive matrix () comprises: (i) a first luminescent material () configured to convert at least part of one or more of (a) the light source light () and (b) optionally a second luminescent material light () from an optional second luminescent material () into a first luminescent material light (); and (ii) a thermo-responsive liquid crystalline compound (); wherein the light transmissive matrix () is configured in thermal contact with the light source (), and wherein the lighting device () is further configured to provide lighting device light () comprising said light source light (), said first luminescent material light () and optionally said second luminescent material light (), and wherein said light converter element is arranged for changing one or more of the color and color temperature of the lighting device light with the electrical power provided to the light source. 1. A lighting device comprising a light source configured to generate light source light and a light converter element , wherein the light converter element comprises a light transmissive matrix , wherein the light transmissive matrix comprises:(i) a first luminescent material configured to convert at least part of one or more of the light source light and optionally a second luminescent material light from an optional second luminescent material into a first luminescent material light; and(ii) a thermo-responsive liquid crystalline compound;wherein the light transmissive matrix is configured in thermal contact with the light source, wherein the lighting device is further configured to provide lighting device light comprising said light source light, said first luminescent material light and optionally said second luminescent material light, ...

LIGHTING AND/OR SIGNALING DEVICE FOR MOTOR VEHICLE

A semiconductor light source that includes a substrate B and a plurality of semiconductor light-emitting rods extending respectively from the substrate, and a plurality of separating walls also extending from the substrate. The separating walls are arranged between the rods in such a way as to define groups of rods, and such that at least two separating walls have a different height. 1: Semiconductor light source comprising a plurality of light emitters that are arranged on the surface of a carrier , and a plurality of separating walls , also extending from the carrier while being arranged between said emitters in such a way as to define groups of emitters , and such that at least two separating walls defining one and the same group of emitters have a different height.2: Light source according to claim 1 , comprising a substrate claim 1 , a plurality of semiconductor light-emitting rods extending respectively from the substrate claim 1 , and a plurality of separating walls claim 1 , also extending from the substrate while being arranged between said rods in such a way as to define groups of rods claim 1 , and such that at least two separating walls have a different height.3: Light source according to claim 1 , wherein that said two separating walls of different height extend substantially perpendicularly with respect to one another.4: Light source according to claim 1 , wherein a first series of first separating walls claim 1 , substantially parallel to one another claim 1 , extends from the substrate in a first direction and has an average height greater than the average height of a second series of second separating walls claim 1 , substantially parallel to one another and extending in a second direction substantially perpendicularly to the first direction.5: Light source according to claim 3 , wherein at least the first separating walls of the first series have a progressive height claim 3 , decreasing from the center of the light source toward at least one edge ...

ENCLOSURES WITH LIGHT EMITTING DIODES WITHIN

A light emitting assembly comprising a solid state device, when and if coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first wavelength radiation, and an enveloping vessel enhancing the luminescence of the solid-state device and providing a mechanism for arranging luminophoric medium in receiving relationship to said first, radiation, and which in exposure to said first radiation, is excited to responsively emit second wavelength radiation or to otherwise transfer its energy without radiation to a third radiative component. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is converted to achromatic light without hue by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors on the walls of the solid-state light envelope which keeps the diode and the fluorescers and phosphors under a vacuum or a rare or Noble or inert gas. 1. A microelectronic device , comprising:a plurality of light-transmissive enclosures, at least one fully within another;at least one outer light-transmissive enclosure, said enclosure removably coupled to a metal base, both forming jointly when coupled the outer boundary of the device which defines an inner space;at least one light-emitting diode array with a plurality of light-emitting diodes each including at least one p-n junction operable to emit primary radiation when energized with an electrical connection, positioned fully within at least one secondary light-transmissive enclosure that isolates the light-emitting diode die from a polymeric or other encapsulating matrix that forms part of an outer boundary of the secondary light-transmissive enclosure, and which defines a secondary interior space;a gas within the inner space; anda thermal connection within said inner space with at least one light-emitting diode die, a gas, at least one metal base;wherein heat is dissipated to the external ...

WAVELENGTH CONVERSION ELEMENT AND PROJECTOR

A wavelength conversion element is provided. The wavelength conversion element includes a substrate, a wavelength conversion layer, a reflective layer, and a heat conductive layer. The wavelength conversion layer is disposed on the substrate. The reflective layer is disposed on the substrate and is located between the substrate and the wavelength conversion layer. The heat conductive layer is disposed on the substrate, and at least a portion of the heat conductive layer is located between the substrate and the reflective layer. A projector is also provided, and the projector includes the wavelength conversion element. The wavelength conversion element exhibits a favorable heat dissipation effect and provides improved conversion efficiency, so that the projector exhibits favorable projection quality and product competitiveness. 1. A wavelength conversion element , comprising a substrate , a wavelength conversion layer , a reflective layer , and a heat conductive layer , wherein:the wavelength conversion layer is disposed on the substrate,the reflective layer is disposed on the substrate and is located between the substrate and the wavelength conversion layer, andthe heat conductive layer is disposed on the substrate, wherein at least a portion of the heat conductive layer is located between the substrate and the reflective layer.2. The wavelength conversion element according to claim 1 , wherein the heat conductive layer comprises a heat conductive material and a filler material.3. The wavelength conversion element according to claim 2 , wherein a thermal conductivity coefficient of the heat conductive material is between 200 W/m·K and 5000 W/m·K.4. The wavelength conversion element according to claim 3 , wherein the heat conductive material comprises graphene claim 3 , diamond claim 3 , silver claim 3 , copper claim 3 , aluminum claim 3 , gold claim 3 , silicon carbide claim 3 , or a combination of the foregoing.5. The wavelength conversion element according to ...

LIGHT EMITTING DEVICES AND LIGHT EMITTING BULBS INCLUDING THE SAME

Filament type light emitting devices are disclosed. One of the light emitting devices includes a non-conductive transparent substrate, one or more light emitting diode chips arrayed above the upper surface of the non-conductive transparent substrate and each including input and output ends extending toward the non-conductive transparent substrate, and conductive transparent connection portions formed on the upper surface of the non-conductive transparent substrate and electrically connected to the input and output ends. Light transmitting regions are provided without reflectors in the vicinity of the input and output ends between the non-conductive transparent substrate and the light emitting diode chips. Thus, light is emitted backward from the light emitting diode chips through the light transmitting regions and the non-conductive transparent substrate. 1. Filament type light emitting bulb including a base , a light transmitting globe coupled to a front opening of the base , a pair of leads , and a plurality of light emitting devices , said one of the light emitting devices comprising;an elongated non-conductive substrate;{'sup': 'th', 'a first light emitting diode chip, a second light emitting diode chip and n(n≥1) light emitting diode chip mounted on the upper surface of the non-conductive substrate and each comprising input and output ends extending toward the non-conductive substrate; and'}{'sup': 'th', 'two connection means formed on the non-conductive substrate, and the connection means including a first connection mean adjacent to the first light emitting diode chip connected a input terminal and a second connection mean adjacent to the nlight emitting diode chip connected a output terminal;'}two extending terminals connected the first connection mean and the second connection mean respectively; anda light transmitting encapsulation covered the non-conductive substrate, the two connection means and partially covered the two extending terminals;wherein a ...

Method of forming a wavelength converted light emitting device

A method according to embodiments of the invention includes disposing a support layer ( 32 ) on a surface of a wavelength converting ceramic wafer ( 30 ). The wavelength converting ceramic wafer and the support layer are diced ( 42 ) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.

METHOD OF DETACHING SEALING MEMBER OF LIGHT EMITTING DEVICE

A method of detaching a sealing member of a light emitting device which has a substrate, alight emitting element mounted on the substrate and a sealing member that seals the light emitting element, wherein a release layer and/or an air layer is/are provided between the substrate and the sealing member; and the sealing member is detached from the substrate at the release layer and/or the air layer. 1. A method of detaching a sealing member of a light emitting device comprising a substrate , a light emitting element mounted on the substrate and a sealing member that seals the light emitting element , the method comprising:providing an air layer between the substrate and the sealing member; anddetaching the sealing member from the substrate at the air layer.2. The method of detaching a sealing member of a light emitting device according to claim 1 , wherein providing the air layer from a contact portion between the part of sealing member and the substrate to an area near the light emitting element.3. The method of detaching a sealing member of a light emitting device according to claim 1 , wherein detaching the sealing member and the light emitting element at the same time.4. The method of detaching a sealing member of a light emitting device according to claim 1 , wherein depositing a new sealing member after detaching the sealing member.5. The method of detaching a sealing member of a light emitting device according to claim 1 , wherein the thickness of the air layer is around 15 to 50 micrometer.6. The method of detaching a sealing member of a light emitting device according to claim 1 , wherein the sealing member contains a wavelength converting member.7. The method of detaching a sealing member of a light emitting device according to claim 1 , wherein the sealing member has hemispherical shape.8. The method of detaching a sealing member of a light emitting device according to claim 1 , further comprising melting a joint member that joins the light emitting element ...

Quantum Dot Light Enhancement Substrate And Lighting Device Including Same

A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein. 1. A component comprising a substrate comprising a material that is transparent to light within a predetermined range of wavelengths , a color conversion material comprising quantum dots disposed over a predetermined region of a surface of the substrate , and a conductive material disposed over at least a portion of the color conversion material , the conductive material being transparent to light within a second predetermined range of wavelengths , wherein the component further includes one or more outcoupling features disposed on a surface of the substrate opposite the color conversion material.2. A component in accordance with wherein the quantum dots comprise semiconductor nanocrystals.316-. (canceled)17. A component in accordance with wherein the substrate comprises a waveguide.18. A component in accordance with wherein the substrate is flexible.19. A component in accordance with wherein the substrate is rigid.20. A component in accordance with ...

PACKAGE FOR LIGHT EMITTING AND RECEIVING DEVICES

In various embodiments, packages include one or more lighting devices having electrical contact points, a flexible substrate for supporting the lighting devices, a plurality of electrically conductive traces defined on the substrate and electrically connected to the contact points of the lighting devices, and an adhesive layer mounting each of the lighting devices on the substrate. 127.-. (canceled)28. A package comprising:a plurality of side-emitting lighting devices each having electrical contact points;a flexible substrate for supporting the lighting devices;a plurality of electrically conductive traces defined on the substrate and electrically connected to the contact points of the lighting devices;an adhesive layer mounting each of the lighting devices on the substrate;a planarization layer disposed over the plurality of electrically conductive traces, the planarization layer being (i) substantially transparent to light emitted by the lighting devices and (ii) positioned to guide light emitted from the sides of the plurality of lighting devices into the planarization layer;a plurality of spaced-apart phosphor elements positioned to receive light from the planarization layer; andone or more optical elements for receiving light from the phosphor elements, shaping the received light via transmission through the optical element, and emitting the light.29. The package of claim 28 , wherein substantially all of the light emitted by the lighting devices is guided by total internal reflection into the planarization layer.30. The package of claim 29 , further comprising claim 29 , disposed (i) between the substrate and the planarization layer and (ii) over at least a portion of the substrate claim 29 , a reflective layer to reduce light transmission into the substrate in the region of the reflective layer.31. The package of claim 28 , further comprising claim 28 , disposed over at least a portion of the planarization layer claim 28 , a reflective layer to reduce light ...

OPTOELECTRONIC COMPONENT WITH INERT GAS ATMOSPHERE

Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Light emitter devices and methods for light emitting diode (led) chips

Light emitter devices for light emitting diodes (LED chips) and related methods are disclosed. In one embodiment a light emitter device includes a substrate and a chip on board (COB) array of LED chips disposed over the substrate. A layer having wavelength conversion material provided therein is disposed over the array of LED chips for forming a light emitting surface from which light is emitted upon activation of the LED chips. In some aspects, the wavelength conversion material includes phosphoric or lumiphoric material that is settled and/or more densely concentrated within one or more predetermined portions of the layer. In some aspects, the devices and methods provided herein can comprise a lumen density of approximately 30 lm/mm 2 or greater.

LIGHT EMITTING MODULE

A light emitting module including a light emitting device package structure and a heat dissipation structure is provided. The light emitting device package structure includes light emitting devices, a patterned reflective element and a patterned conductive layer. The patterned reflective element is disposed around side surfaces of the light emitting devices and exposes a first bottom surface of a first pad and a second bottom surface of a second pad. The patterned conductive layer is disposed on the first bottom surface of the first pad and the second bottom surface of the second pad. The light emitting devices are electrically connected to each other in a series connection, a parallel connection or a series-parallel connection through the patterned conductive layer. The heat dissipation structure is disposed below the light emitting device package structure and includes a heat dissipation unit and a patterned circuit layer disposed on the heat dissipation unit. 1. A light emitting module , comprising: a plurality of light emitting devices, each of the light emitting devices having an upper surface and a lower surface opposite to each other, a side surface connecting the upper surface and the lower surface and a first pad and a second pad located on the lower surface and separated from each other;', 'a patterned reflective element, disposed around the side surfaces of the light emitting devices, and exposing a first bottom surface of the first pad and a second bottom surface of the second pad of each of the light emitting devices;', 'a patterned conductive layer, disposed on the first bottom surface of the first pad and the second bottom surface of the second pad of each of the light emitting devices, wherein the light emitting devices are electrically connected to each other in a series connection, a parallel connection or a series-parallel connection through the patterned conductive layer; and, 'a light emitting device package structure, comprisinga heat ...

LIGHT EMITTING SEMICONDUCTOR

A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.

Light emitting diode package structure

A LED package structure including a carrier and a light emitting diode (LED) chip is provided. The LED chip includes a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer. The substrate has a first surface and a second surface opposite to the first surface. The patterned structure is formed on the second surface of the substrate. The first semiconductor layer is disposed on the first surface of the substrate. The active layer is disposed on a portion of a surface of the first semiconductor layer, and other portion of the surface not covered by the active layer is exposed. The second semiconductor layer is disposed on the active layer. The LED chip is disposed on the carrier by way of flip-chip so that the first and the second semiconductor layers face towards the carrier.