Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 456. Отображено 124.
07-08-2008 дата публикации

INFORMATION STORAGE MEDIUM USING NANOCRYSTAL PARTICLES, METHOD OF MANUFACTURING THE INFORMATION STORAGE MEDIUM, AND INFORMATION STORAGE APPARATUS INCLUDING THE INFORMATION STORAGE MEDIUM

Номер: US20080186837A1
Автор: Seung-bum Hong, Simon Buehlmann, Shin-ae Jun, Sung-hoon Choa, Eun-joo Jang, Yong-kwan Kim
Принадлежит: Samsung Electronics Co., Ltd.

Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.

Подробнее
Номер записи: 1
09-11-2010 дата публикации

Alloy-type semiconductor nanocrystals

Номер: US0007829189B2
Автор: Eun-joo Jang, Tae-Kyung Ahn, JANG EUN-JOO, AHN TAE-KYUNG
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.

Подробнее
Номер записи: 2
22-03-2007 дата публикации

Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device

Номер: US20070064468A1
Автор: Kwang-soo Seol, Shin-ae Jun, Eun-joo Jang, Jung-eun Lim, Kyung-sang Cho, Byung-ki Kim, Jae-ho Lee, Jae-young Choi
Принадлежит:

Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.

Подробнее
Номер записи: 3
27-01-2009 дата публикации

Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device

Номер: US0007482619B2
Автор: Kwang-soo Seol, Shin-ae Jun, Eun-joo Jang, Jung-eun Lim, Kyung-sang Cho, Byung-ki Kim, Jae-ho Lee, Jae-young Choi, SEOL KWANG-SOO, JUN SHIN-AE, JANG EUN-JOO, LIM JUNG-EUN, CHO KYUNG-SANG, KIM BYUNG-KI, LEE JAE-HO, CHOI JAE-YOUNG
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.

Подробнее
Номер записи: 4
03-11-2009 дата публикации

Nanocomposite material and method of manufacturing the same comprising forming an inorganic matrix by sol-gel reaction

Номер: US0007611750B2
Автор: Dong-kee Yi, Byung-ki Kim, Jae-ho Lee, Eun-joo Jang, Seong-jae Choi, YI DONG-KEE, KIM BYUNG-KI, LEE JAE-HO, JANG EUN-JOO, CHOI SEONG-JAE
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

A nanocomposite material and a method of manufacturing the same are disclosed. The nanocomposite material includes a plurality of nanoparticles coated with a metal oxide, and a matrix of the metal oxide immobilizing the nanoparticles that are dispersed therein. The nanocomposite material is manufactured such that macro- or macro-scale cracks are prevented or effectively prevented, light stability is enhanced over a light-emitting period, and light brightness is improved.

Подробнее
Номер записи: 5
28-03-2017 дата публикации

Backlight unit and liquid crystal display device including the same

Номер: US0009606281B2
Автор: Eun-joo Jang, Hyun-a Kang, Oul Cho, JANG EUN-JOO, KANG HYUN-A, CHO OUL, Jang Eun-joo, Kang Hyun-a, Cho Oul
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A backlight unit for a liquid crystal display device including a liquid crystal panel, includes: a light source including a light-emitting diode (“ED”) which generates and emits light; and a light converting layer between the light source and the liquid crystal panel, spaced apart from the light source, and converting the light from the light source into white light and emitting the white light toward the liquid crystal panel. The light converting layer includes: semiconductor nanocrystals, and a barrier material which restricts penetration of moisture or oxygen.

Подробнее
Номер записи: 6
11-10-2011 дата публикации

Backlight unit and liquid crystal display device having the same

Номер: US0008035772B2
Автор: Byung-ki Kim, Eun-joo Jang, Hae-il Park, Jung-eun Lim, KIM BYUNG-KI, JANG EUN-JOO, PARK HAE-IL, LIM JUNG-EUN
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

A backlight unit for a liquid crystal display (LCD) device includes a light emitting diode (LED) light source and a light conversion layer disposed separate from and above from the LED light source. The light conversion layer includes a semiconductor nano crystal, converts light emitted from the LED light source to white light and provides the white light to a liquid crystal panel of the LCD.

Подробнее
Номер записи: 7
31-07-2007 дата публикации

Alloy type semiconductor nanocrystals and method for preparing the same

Номер: US0007250082B2
Автор: Eun-joo Jang, Tae-kyung Ahn, JANG EUN-JOO, AHN TAE-KYUNG
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.

Подробнее
Номер записи: 8
08-11-2007 дата публикации

Memory device having nanocrystals and methods of manufacturing the same

Номер: US20070257297A1
Автор: Kwang-soo Seol, Seong-jae Choi, Jae-young Choi, Yo-sep Min, Eun-joo Jang, Dong-kee Yi
Принадлежит:

The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects the source region and the drain region and includes a plurality of nanocrystals; a control gate formed on the memory cell. The memory cell includes a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer. The control oxide layer includes the nanocrystals. The second tunneling oxide layer, having an aminosilane group the increases electrostatic attraction, may be hydrophilic, enabling the formation of a monolayer of the nanocrystals.

Подробнее
Номер записи: 9
30-11-2010 дата публикации

Coated nano particle and electronic device using the same

Номер: US0007842385B2
Автор: Eun-joo Jang, Shin-ae Jun, JANG EUN-JOO, JUN SHIN-AE
Принадлежит: Samsung Electro-Mechanics Co., Ltd., SAMSUNG ELECTRO MECH, SAMSUNG ELECTRO-MECHANICS CO., LTD.

A coated nano particle and an electronic device using the composite nano particle as an illuminator are provided. The composite nano particle includes a nano particle receiving light and emitting light; and a coating material formed on a surface of the nano particle and having an index of refraction different from that of the nano particle. The coated nano particle is made by coating a surface of the nano particle with a material having an index of refraction, which has an intermediate value between an index of refraction of a matrix and an index of refraction of the nano particle as an illuminator, with a predetermined thickness. The light emitted from the nano particle is efficiently transferred to the outside as the light reflected from the matrix and absorbed by the nano particle is suppressed. Therefore, a luminous efficiency of the illuminator is improved, and an electronic device using the illuminator is provided.

Подробнее
Номер записи: 10
28-06-2018 дата публикации

BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME

Номер: US20180180944A1
Автор: Eun-joo Jang, Hyun-a Kang, Oul Cho
Принадлежит:

A backlight unit for a liquid crystal display device including a liquid crystal panel, includes: a light source including a light-emitting diode (“ED”) which generates and emits light; and a light converting layer between the light source and the liquid crystal panel, spaced apart from the light source, and converting the light from the light source into white light and emitting the white light toward the liquid crystal panel. The light converting layer includes: semiconductor nanocrystals, and a barrier material which restricts penetration of moisture or oxygen.

Подробнее
Номер записи: 11
19-01-2010 дата публикации

Photo-luminescent liquid crystal display

Номер: US0007649594B2
Автор: Byung-ki Kim, Seoung-jae Im, Jae-young Choi, Eun-sung Lee, Eun-joo Jang, Jae-hee Cho, KIM BYUNG-KI, IM SEOUNG-JAE, CHOI JAE-YOUNG, LEE EUN-SUNG, JANG EUN-JOO, CHO JAE-HEE
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

A photo-luminescent liquid crystal display (PL LCD) includes: a light control unit which includes a liquid crystal (LC) layer modulating the UV light and electrodes driving the LC layer; and a light emitting layer which emits light by the UV light transmitted through the light control unit. The light emitting layer includes inorganic phosphors and semiconductor quantum dots (QDs) having a quantum confinement effect. The PL LCD includes adding QDs having a high quantum efficiency into luminescent substances having lower light utilization efficiency than other colors, for example, red phosphor having very low quantum efficiency to improve the light utilization efficiency, thereby improving the color balance.

Подробнее
Номер записи: 12
04-02-2014 дата публикации

Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage medium

Номер: US0008642155B2
Автор: Seung-bum Hong, Simon Buehlmann, Shin-ae Jun, Sung-hoond Choa, Eun-joo Jang, Yong-kwan Kim, HONG SEUNG-BUM, BUEHLMANN SIMON, JUN SHIN-AE, CHOA SUNG-HOOND, JANG EUN-JOO, KIM YONG-KWAN
Принадлежит: Seagate Technology LLC, HONG SEUNG-BUM, BUEHLMANN SIMON, JUN SHIN-AE, CHOA SUNG-HOOND, JANG EUN-JOO, KIM YONG-KWAN, SEAGATE TECHNOLOGY LLC

Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.

Подробнее
Номер записи: 13
27-12-2011 дата публикации

White light emitting device

Номер: US0008084934B2
Автор: Byung-ki Kim, Kyung-sang Cho, Eun-joo Jang, KIM BYUNG-KI, CHO KYUNG-SANG, JANG EUN-JOO
Принадлежит: Samsung-Electro Mechanics Co., Ltd., KIM BYUNG-KI, CHO KYUNG-SANG, JANG EUN-JOO, SAMSUNG ELECTRO MECH, SAMSUNG-ELECTRO MECHANICS CO., LTD.

A white LED with an improved structure for high light emitting efficiency is provided. The white LED includes a light source device and a phosphor containing light emitting nanoparticles and an inorganic phosphor which emit white light by being excited by the light source.

Подробнее
Номер записи: 14
29-11-2007 дата публикации

Alloy type semiconductor nanocrystals and method for preparing the same

Номер: US20070273275A1
Автор: Eun-joo Jang, Tae-kyung Ahn
Принадлежит: Samsung Electronics Co., Ltd.

Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.

Подробнее
Номер записи: 15
20-01-2005 дата публикации

Alloy type semiconductor nanocrystals and method for preparing the same

Номер: US20050012182A1
Автор: Eun-joo Jang, Tae-kyung Ahn
Принадлежит: Samsung Electronics Co., Ltd.

Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.

Подробнее
Номер записи: 16
25-10-2012 дата публикации

Information Storage Medium Using Nanocrystal Particles, Method of Manufacturing the Information Storage Apparatus Including the Information Storage Medium

Номер: US20120267703A1
Автор: Seung-bum Hong, Simon Buehlmann, Shin-ae Jun, Sung-hoon Choa, Eun-joo Jang, Yong-kwan Kim, HONG SEUNG-BUM, BUEHLMANN SIMON, JUN SHIN-AE, CHOA SUNG-HOON, JANG EUN-JOO, KIM YONG-KWAN
Принадлежит: Seagate Technology LLC

Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer. 1. An apparatus , comprising:a conductive layer;a first insulating layer formed on a surface of the conductive layer;a nanocrystal layer formed on the first insulating layer and comprising conductive nanocrystal particles, the conductive nanocrystal particles comprising metal nanoparticles or semiconductor nanoparticles;a second insulating layer formed on the nanocrystal layer; anda protective layer formed on the second insulating layer.2. The apparatus of claim 1 , wherein the nanocrystal layer has a monolayer or multilayer structure.3. The apparatus of claim 1 , wherein the conductive nanocrystal particles comprise metal nanoparticles formed of at least a metal selected from the group consisting of Pt claim 1 , Pd claim 1 , Ni claim 1 , Ru claim 1 , Co claim 1 , Cr claim 1 , Mo claim 1 , W claim 1 , Mn claim 1 , Fe claim 1 , Os claim 1 , Ph claim 1 , Ir claim 1 , Ta claim 1 , Au claim 1 , and Ag.4. The apparatus of claim 1 , wherein the conductive nanocrystal particles comprise semiconductor nanoparticles formed of at least a semiconductor selected from the group consisting of a Group IV semiconductor claim 1 , a Group II-VI compound semiconductor claim 1 , a Group III-V compound semiconductor claim 1 , and a Group IV-VI compound semiconductor.5. The apparatus of claim 1 , wherein the nanocrystal layer comprises an insulating matrix in which the conductive nanocrystal particles are distributed.6. The apparatus of claim 5 , wherein the insulating matrix ...

Подробнее
Номер записи: 17
26-06-2012 дата публикации

Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage medium

Номер: US0008206803B2
Автор: Seung-bum Hong, Simon Buehlmann, Shin-ae Jun, Sung-hoon Choa, Eun-joo Jang, Yong-kwan Kim, HONG SEUNG-BUM, BUEHLMANN SIMON, JUN SHIN-AE, CHOA SUNG-HOON, JANG EUN-JOO, KIM YONG-KWAN
Принадлежит: Seagate Technology International, HONG SEUNG-BUM, BUEHLMANN SIMON, JUN SHIN-AE, CHOA SUNG-HOON, JANG EUN-JOO, KIM YONG-KWAN, SEAGATE TECHNOLOGY INT, SEAGATE TECHNOLOGY INTERNATIONAL

Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.

Подробнее
Номер записи: 18
03-04-2018 дата публикации

Backlight unit and liquid crystal display device including the same

Номер: US0009933658B2
Автор: Eun-joo Jang, Hyun-a Kang, Oul Cho, JANG EUN-JOO, KANG HYUN-A, CHO OUL, Jang Eun-joo, Kang Hyun-a, Cho Oul
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A backlight unit for a liquid crystal display device including a liquid crystal panel, includes: a light source including a light-emitting diode (“ED”) which generates and emits light; and a light converting layer between the light source and the liquid crystal panel, spaced apart from the light source, and converting the light from the light source into white light and emitting the white light toward the liquid crystal panel. The light converting layer includes: semiconductor nanocrystals, and a barrier material which restricts penetration of moisture or oxygen.

Подробнее
Номер записи: 19
10-03-2009 дата публикации

Memory device having nanocrystals in memory cell

Номер: US0007501680B2
Автор: Kwang-soo Seol, Seong-jae Choi, Jae-young Choi, Yo-sep Min, Eun-joo Jang, Dong-kee Yi, SEOL KWANG-SOO, CHOI SEONG-JAE, CHOI JAE-YOUNG, MIN YO-SEP, JANG EUN-JOO, YI DONG-KEE
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects the source region and the drain region and includes a plurality of nanocrystals; a control gate formed on the memory cell. The memory cell includes a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer. The control oxide layer includes the nanocrystals. The second tunneling oxide layer, having an aminosilane group the increases electrostatic attraction, may be hydrophilic, enabling the formation of a monolayer of the nanocrystals.

Подробнее
Номер записи: 20
04-08-2020 дата публикации

Backlight unit and liquid crystal display device including the same

Номер: US0010732458B2
Автор: Eun-joo Jang, Hyun-a Kang, Oul Cho, JANG EUN-JOO, KANG HYUN-A, CHO OUL, Jang, Eun-joo, Kang, Hyun-a, Cho, Oul
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A backlight unit for a liquid crystal display device including a liquid crystal panel, includes: a light source including a light-emitting diode (“ED”) which generates and emits light; and a light converting layer between the light source and the liquid crystal panel, spaced apart from the light source, and converting the light from the light source into white light and emitting the white light toward the liquid crystal panel. The light converting layer includes: semiconductor nanocrystals, and a barrier material which restricts penetration of moisture or oxygen.

Подробнее
Номер записи: 21
11-01-2007 дата публикации

Photo-luminescent liquid crystal display

Номер: US20070007881A1
Автор: Byung-ki Kim, Seoung-jae Im, Jae-young Choi, Eun-sung Lee, Eun-joo Jang, Jae-hee Cho
Принадлежит:

A photo-luminescent liquid crystal display (PL LCD) includes: a light control unit which includes a liquid crystal (LC) layer modulating the UV light and electrodes driving the LC layer; and a light emitting layer which emits light by the UV light transmitted through the light control unit. The light emitting layer includes inorganic phosphors and semiconductor quantum dots (QDs) having a quantum confinement effect. The PL LCD includes adding QDs having a high quantum efficiency into luminescent substances having lower light utilization efficiency than other colors, for example, red phosphor having very low quantum efficiency to improve the light utilization efficiency, thereby improving the color balance.

Подробнее
Номер записи: 22
07-05-2013 дата публикации

Backlight unit and liquid crystal display device having the same

Номер: US0008436964B2
Автор: Byung-ki Kim, Eun-joo Jang, Hae-il Park, Jung-eun Lim, KIM BYUNG-KI, JANG EUN-JOO, PARK HAE-IL, LIM JUNG-EUN
Принадлежит: Samsung Electronics Co., Ltd., KIM BYUNG-KI, JANG EUN-JOO, PARK HAE-IL, LIM JUNG-EUN, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

A backlight unit for a liquid crystal display ("LCD") device includes a light emitting diode ("LED") light source and a light conversion layer disposed separate from and above from the LED light source. The light conversion layer includes a semiconductor nano crystal, converts light emitted from the LED light source to white light and provides the white light to a liquid crystal panel of the LCD.

Подробнее
Номер записи: 23
28-08-2008 дата публикации

FERROELECTRIC INFORMATION STORAGE MEDIUM AND METHOD OF MANUFACTURING THE SAME

Номер: US20080205252A1
Автор: Simon Buehlmann, Eun-joo Jang, Shin-ae Jun, Seung-bum Hong, Yong-kwan Kim
Принадлежит: Samsung Electronics Co., Ltd.

A ferroelectric information storage medium having ferroelectric nanodots and a method of manufacturing the ferroelectric information storage medium are provided. The ferroelectric information storage medium includes a substrate, an electrode formed on the substrate, and ferroelectric nanodots formed on the electrode, wherein the ferroelectric nanodots are separated from each other, and a plurality of the ferroelectric nanodots form a single bit region.

Подробнее
Номер записи: 24
02-11-2006 дата публикации

White light emitting device

Номер: US20060244358A1
Автор: Byung-ki Kim, Kyung-sang Cho, Eun-joo Jang
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A white LED with an improved structure for high light emitting efficiency is provided. The white LED includes a light source device and a phosphor containing light emitting nanoparticles and an inorganic phosphor which emit white light by being excited by the light source.

Подробнее
Номер записи: 25
12-01-2012 дата публикации

WHITE LIGHT EMITTING DIODE AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME

Номер: US20120008065A1
Автор: CHOI Seo-Young, IM Seoung-jae, JANG Eun-Joo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the blue LED light source into white light. The light conversion layer includes a green light emitting semiconductor nanocrystal and a red light emitting semiconductor nanocrystal. The white light emitting diode has a red, green and blue color (“RGB”) color locus which is within a chrominance error range (±4ΔE*) locus from the constant hue locus of each of sRGB color coordinates, or within a chrominance error range (±4ΔE*) locus from the constant hue locus of each of AdobeRGB color coordinates. 1. A white light emitting diode comprising:a blue light emitting diode light source;a light conversion layer which converts incident light from the blue light emitting diode light source into white light, and{'sub': ab', 'ab, 'a red, green and blue color coordinate locus which is within a chrominance error range (±4ΔE*) locus from the constant hue locus of each of sRGB color coordinates, or within a chrominance error range (±4ΔE*) locus from the constant hue locus of each of AdobeRGB color coordinates,'}wherein the light conversion layer comprises a green light emitting semiconductor nanocrystal and a red light emitting semiconductor nanocrystal.2. The white light emitting diode of claim 1 , wherein the white light emitting diode has the red claim 1 , green and blue color coordinate locus which is within a chrominance error range (±2ΔE*) locus from the constant hue locus of each of sRGB color coordinates claim 1 , or within a chrominance error range (±2ΔE*) locus from the constant hue locus of each of AdobeRGB color coordinates.3. The white light emitting diode of claim 1 , wherein the white light emitting diode has color coordinates of an x-coordinate of about 0.24±0.05 and a y-coordinate of about 0.21±0.05.4. The white light emitting diode of claim 1 , wherein the white light emitting diode has a color temperature of about ...

Подробнее
Номер записи: 26
19-04-2012 дата публикации

NANOCRYSTAL-METAL OXIDE-POLYMER COMPOSITES AND PREPARATION METHOD THEREOF

Номер: US20120091406A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, Lim Jung Eun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Nanocrystal-metal oxide-polymer composites and their methods of preparation are described. The composites comprises a number of nanocrystals within a metal oxide matrix, and an oligomer or polymer covalently bonded to organic reactive groups of the metal oxide matrix. The composites can be applied to a variety of electronic devices. The electronic devices constructed from the composites do not decrease in performance rapidly due to degradation and exhibit improved stability. 1. A nanocrystal- metal oxide composite comprisinga nanocrystal surface-modified with a surfactant anda metal oxide surrounding the nanocrystalwherein the nanocrystal- metal oxide composite is repassivated with an oligomer or a polymer.2. The composite of claim 1 ,wherein the surfactant has at least one reactive group selected from —SR1, —NR1R2, —OR1, —COOR1, —PR1R2, —P(═O)R1R2, —SiR1R2R3 and —C(═O)R1 (1) (R1R2 and R3, which may be the same or different, each represents H, C6-C24 alkyl, C6-C24 alkenyl, C6-C24 aryl or C6-C24 alkoxy.).3. The composite of claim 1 ,wherein the nanocrystal is at least one compound selected from the group consisting of metals, Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group compounds, Group II-IV-VI compounds, Group II-IV-V compounds and Group IV compounds; and alloys thereof.4. The composite of claim 1 ,wherein the nanocrystal has a core, a core-shell, a core-multishell, a core-intermediate layer-shell, a core-alloy layer-shell, a core-intermediate layer-multishell, or a core-alloy layer-multishell structure.5. The composite of claim 4 ,wherein the nanocrystal has a shell composed of a large band gap material.6. The composite of claim 5 ,wherein the nanocrystal has a core comprising at least one selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, SiC, Fe, Pt, Ni, Co, Al, Ag, Au, Cu, FePt, Si, Ge, PbS, PbSe and PbTe and alloys or ...

Подробнее
Номер записи: 27
15-11-2012 дата публикации

METHOD FOR PREPARING METAL PHOSPHIDE NANOCRYSTAL FROM PHOSPHITE COMPOUND AND METHOD FOR PASSIVATING NANOCRYSTAL CORE WITH THE SAME

Номер: US20120288713A1
Автор: JANG Eun Joo, JUN Shin Ae, Lim Jung Eun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes. 1. Metal phosphide nanocrystals prepared by:adjusting a temperature of a metal precursor solution to a predetermined temperature, the metal precursor solution comprising a metal precursor, a dispersant and a solvent; {'br': None, 'sub': '3', 'P(OR)\u2003\u2003(Formula 1)'}, 'preparing a phosphite compound solution, wherein the phosphite compound is represented by Formula 1 below{'sub': 1', '20, 'wherein R is selected from the group consisting of a substituted or an unsubstituted C-Calkyl, aryl, ether, ethylene, oxide, and propylene oxide;'}feeding the phosphite compound solution to the metal precursor solution to form a mixture;reacting the mixture to grow metal phosphide nanocrystals; andseparating the metal phosphide nanocrystals from the mixture.2. The metal phosphide nanocrystals of claim 1 , wherein the metal precursor is an organometallic compound having an element selected from the group consisting of Zn claim 1 , Cd claim 1 , Hg claim 1 , Pb claim 1 , Sn claim 1 , Ge claim 1 , Ga claim 1 , In claim 1 , Tl claim 1 , Sc claim 1 , Ti claim 1 , V claim 1 , Cr claim 1 , Mn claim 1 , Fe claim 1 , Co claim 1 , Ni claim 1 , Cu claim 1 , Y claim 1 , Zr claim 1 , Nb claim 1 , Mo claim 1 , Tc claim 1 , Pd claim 1 , Ag claim 1 , Pt and Au claim 1 , a salt of Zn claim 1 , Cd claim 1 , Hg claim 1 , Pb claim 1 , Sn claim 1 , Ge claim 1 , Ga claim 1 , In claim 1 , Tl claim 1 , Sc claim 1 , Ti claim 1 , V claim 1 , Cr claim 1 , Mn ...

Подробнее
Номер записи: 28
22-11-2012 дата публикации

OPTOELECTRONIC DEVICE AND STACKING STRUCTURE

Номер: US20120293063A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KANG Hyun A., KIM Young Hwan
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided is an optoelectronic device that includes: a light source; an emission layer disposed on the light source and including light emitting particles dispersed in a matrix polymer; and a polymer film disposed on the emission layer. The polymer film includes two layers: a first layer including a first polymer and a second layer including a second polymer. The first polymer includes a polymerized product of a first monomer including at least two thiol (—SH) groups and a siloxane-based second monomer or oligomer including at least one carbon-carbon unsaturated bond at a terminal end, and the second polymer includes a polymerized product of a third monomer including at least two thiol (—SH) groups and a fourth monomer including at least two carbon-carbon unsaturated bonds at a terminal end. 1. An optoelectronic device , comprising:a light source;an emission layer disposed on the light source comprising light emitting particles dispersed in a matrix polymer; anda polymer film disposed on the emission layer,wherein the polymer film comprises a first polymer layer comprising a first polymer and a second polymer layer comprising a second polymer,wherein the first polymer comprises a polymerized product of a first monomer comprising at least two thiol (—SH) groups and a siloxane-containing second monomer or oligomer comprising at least one carbon-carbon unsaturated bond at a terminal end, andwherein the second polymer comprises a polymerized product of a third monomer comprising at least two thiol (—SH) groups and a fourth monomer comprising at least two carbon-carbon unsaturated bonds at a terminal end.6. The optoelectronic device of claim 4 , wherein claim 4 , in Chemical Formula 3 claim 4 , Lis a substituted or unsubstituted pyrrolidinyl group claim 4 , a substituted or unsubstituted tetrahydrofuranyl group claim 4 , a substituted or unsubstituted pyridyl group claim 4 , a substituted or unsubstituted pyrimidyl group claim 4 , a substituted or unsubstituted piperidyl ...

Подробнее
Номер записи: 29
13-12-2012 дата публикации

OPTOELECTRONIC DEVICE AND STACKING STRUCTURE

Номер: US20120313082A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KANG Hyun A, KWON Soo-Kyung
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Disclosed is an optoelectronic device that includes a light source, an emission layer disposed on the light source including a light emitting particle dispersed in a matrix polymer, and a polymer film disposed on the emission layer, the polymer film including a polymerized polymer of a first monomer including at least two thiol (—SH) groups and a second monomer including at least two carbon-carbon unsaturated bond-containing groups at a terminal end. 1. An optoelectronic device , comprising:a light source; an emission layer disposed on the light source comprising a light emitting particle dispersed in a matrix polymer; and a polymer film disposed on the emission layer,wherein the polymer film comprises a polymerized product of a first monomer comprising at least two thiol (—SH) groups and a second monomer comprising at least two carbon-carbon unsaturated bond-containing groups at a terminal end.2. The optoelectronic device of claim 1 , wherein the first monomer comprising at least two thiol (—SH) groups claim 1 , is represented by the following Chemical Formula 1:{'br': None, 'sup': '1', 'sub': k1', '1', '1', 'm', 'k2, '[R\ue8a0L\ue8a0Y—(SH)]\u2003\u2003Chemical Formula 1'}wherein, in Chemical Formula 1,{'sup': '1', 'sub': '2', 'Ris hydrogen, a substituted or unsubstituted linear or branched C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 alicyclic organic group comprising a double bond or triple bond in a ring, a substituted or unsubstituted C3 to C30 heterocycloalkyl group comprising a double bond or triple bond in a ring, a C3 to C30 alicyclic group substituted with a C2 to C30 alkenyl group or a C2 to C30 ...

Подробнее
Номер записи: 30
10-01-2013 дата публикации

PHOTOSENSITIVE SEMICONDUCTOR NANOCRYSTALS, PHOTOSENSITIVE COMPOSITION COMPRISING SEMICONDUCTOR NANOCRYSTALS AND METHOD FOR FORMING SEMICONDUCTOR NANOCRYSTAL PATTERN USING THE SAME

Номер: US20130011635A1
Автор: AHN Tae Kyung, JANG Eun Joo, JUN Shin Ae, Lee Sung Hun, PARK Jong Jin
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

An organic-inorganic hybrid electroluminescent device having a semiconductor nanocrystal pattern prepared by producing a semiconductor nanocrystal film using semiconductor nanocrystals, where the nanocrystal is surface-coordinated with a compound containing a photosensitive functional group, exposing the film through a mask and developing the exposed film 1. A method for forming a semiconductor nanocrystal film on a substrate comprising: {'br': None, 'X-A-B\u2003\u2003(1)'}, '(a) dispersing semiconductor nanocrystals in an organic solvent, wherein the semiconductor nanocrystals are surface-coordinated with a compound containing a photosensitive functional group represented by Formula 1 below{'sub': 1˜10', '1˜5', '6˜15', '6˜12', '1˜5', '2, 'wherein X is NC—, HOOC—, HRN—, POOOH—, RS— or RSS— (in which R is a hydrogen atom or a Csaturated or unsaturated aliphatic hydrocarbon group); A is a direct bond, an aliphatic organic group, a phenylene group or a biphenylene group; and B is an organic group containing at least one carbon-carbon double bond, which may be substituted with at least one group selected from the group consisting of —CN, —COOH, halogen groups, Chalogenated alkyl groups, amine groups, Caromatic hydrocarbon groups, and Caromatic hydrocarbon groups substituted with —F, —Cl, —Br, a halogenated alkyl group, R′O— (in which R′ is a hydrogen atom or a Calkyl group), —COOH, an amine group or —NO;'}(b) coating the substrate with the dispersion of the semiconductor nanocrystals in the organic solvent;(c) evaporating the organic solvent to form a nanoparticle film of the semiconductor nanocrystals on the substrate; and(d) exposing a predetermined area of the nanoparticle film to light, wherein a crosslinking reaction takes place in the predetermined area exposed to the light.2. The method according to claim 1 , wherein the nanoparticle film of step (c) is dried at 30-100° C. before the light exposure of step (d).3. The method according to claim 1 , wherein the ...

Подробнее
Номер записи: 31
28-02-2013 дата публикации

MULTILAYER NANOCRYSTAL STRUCTURE AND METHOD FOR PRODUCING THE SAME

Номер: US20130048946A1
Автор: CHOI Hye Ran, JANG Eun Joo, JUN Shin Ae, Lim Jung Eun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability. 1. A multilayer nanocrystal structure comprising:(a) a nanocrystal alloy core comprising two or more nanocrystal layers and including an alloy interlayer formed at an interface between the two or more nanocrystal layers, wherein a first nanocrystal and a second nanocrystal are different from each other in terms of elemental compositions and the alloy interlayer is formed at between the first nanocrystal and the second nanocrystal; and(b) one or more layers of nanocrystal shells, each having different band gaps, sequentially grown on a surface of the nanocrystal alloy core to form the nanocrystal shells such that a first layer of the nanocrystal shells covers the exposed surface of the nanocrystal alloy core, and each additional layer of the nanocrystal shells covers an exposed surface of a previous layer of the nanocrystal shells,wherein the outermost shell of the nanocrystal shells has a band gap larger than any one band gap of the nanocrystal alloy core, and the inner shell layers have a small energy band gap compared to the nanocrystal alloy core.2. The multilayer nanocrystal structure according to claim 1 , wherein the nanocrystal shells are selected from the group consisting of Group II-VI claim 1 , Group III-V claim 1 , Group IV claim 1 , Group IV-VI compounds claim 1 , and mixtures thereof.3. The multilayer nanocrystal structure according to claim 1 , wherein the nanocrystal ...

Подробнее
Номер записи: 32
14-03-2013 дата публикации

CASE INCLUDING SEMICONDUCTOR NANOCRYSTALS, AND OPTOELECTRONIC DEVICE INCLUDING THE SAME

Номер: US20130062591A1
Автор: HAN In-taek, JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KANG Hyun A., KWON Soo-Kyung, LEE Sang Eui
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A case including a case main body, a matrix including a semiconductor nanocrystal, the matrix disposed in the case main body, and a sealant disposed on the case main body, wherein the sealant has a gas permeability of about 1 cubic centimeter at standard temperature and pressure per centimeter per meter squared per day per atmosphere or less and a tensile strength of about 5 megaPascals or more, and wherein the semiconductor nanocrystal is a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV element, a Group IV compound, or a combination thereof. 1. A case comprising:a case main body;a matrix comprising a semiconductor nanocrystal, the matrix disposed in the case main body; anda sealant disposed on the case main body, wherein the sealant has a gas permeability of about 1 cubic centimeter at standard temperature and pressure per centimeter per meter squared per day per atmosphere or less and a tensile strength of about 5 megaPascals or more, andwherein the semiconductor nanocrystal is a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV element, a Group IV compound, or a combination thereof.2. The case of claim 1 , wherein the sealant has a tensile modulus of more than about 0.7 gigaPascals.3. The case of claim 1 , wherein the sealant is a cured resin claim 1 , wherein the resin is an epoxy resin claim 1 , a thiol-ene resin claim 1 , or a combination thereof claim 1 ,wherein the epoxy resin is a polymerization product of a polyhydric phenol or a polyhydric alcohol, and an epihalohydrin, andthe thiol-ene resin is a polymer of a first monomer comprising at least one thiol group at a terminal end and a second monomer comprising at least one carbon-carbon unsaturated bond at a terminal end.4. The case of claim 1 , wherein the sealant further comprises a plate-shaped particle comprising an inorganic oxide claim 1 , a carbon-containing material claim 1 , a metal-containing ...

Подробнее
Номер записи: 33
25-04-2013 дата публикации

LIGHT EMITTING DIODE

Номер: US20130099212A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KANG Hyun A, KWON Soo Kyung
Принадлежит: SAMSUNG ELECTRONICS CO. LTD.

A light emitting diode that includes: a light source; a buffer layer disposed on the light source and including a first matrix polymer; a polymer layer disposed on the buffer layer and including an organic/inorganic hybrid polymer; and an emission layer disposed on the polymer layer and including a light emitting particle dispersed in a second matrix polymer, wherein one selected from the light source, the buffer layer, the emission layer, and a combination thereof includes one selected from sulfurous component, a nitrogenous component, and a combination thereof. 1. A light emitting diode , comprising:a light source;a buffer layer disposed on the light source and comprising a first matrix polymer;a polymer layer disposed on the buffer layer and comprising an organic/inorganic hybrid polymer; andan emission layer disposed on the polymer layer and comprising a light active particle dispersed in a second matrix polymer,wherein one selected from the light source, the buffer layer, the emission layer, and a combination thereof comprises one selected from sulfurous component, a nitrogenous component, and a combination thereof.2. The light emitting diode of claim 1 , further comprising a reflector disposed on a side of the light source opposite the emission layer.3. The light emitting diode of claim 2 , wherein the reflector comprises silver.4. The light emitting diode of claim 3 , having a luminance after 250 hours of greater than 80% of an initial luminance.5. The light emitting diode of claim 1 , wherein the emission layer comprises one selected from a sulfurous component claim 1 , a nitrogenous component claim 1 , and a combination thereof.6. The light emitting diode of claim 1 , wherein the first matrix polymer comprises a silicone resin.7. The light emitting diode of claim 1 , wherein the light active particle is selected from a phosphor claim 1 , a semiconductor nanocrystal claim 1 , a metal nanocrystal claim 1 , a metal oxide nanocrystal claim 1 , and a combination ...

Подробнее
Номер записи: 34
25-04-2013 дата публикации

Semiconductor nanocrystal-polymer composite, method of preparing the same, and composite film and optoelectronic device including the same

Номер: US20130099213A1
Автор: Eun Joo Jang, Hyo Sook JANG, Hyun A Kang, Shin Ae Jun, Soo Kyung Kwon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (—COO − ) bindable to a surface of the semiconductor nanocrystal, and a metal cation bindable to a carboxylate anion group of the plurality of carboxylate anion groups.

Подробнее
Номер записи: 35
02-05-2013 дата публикации

Semiconductor nanocrystal-polymer micronized composite, method of preparing the same, and optoelectronic device

Номер: US20130105854A1
Автор: Eun-joo Jang, Hyo-Sook Jang, Hyun-A KANG, In Taek Han, Shin Ae Jun, Tae Won JEONG
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor nanocrystal-polymer micronized composite that includes: at least one semiconductor nanocrystal; and a polymer surrounding the at least one semiconductor nanocrystal, wherein the polymer includes at least one functional group reactive with the semiconductor nanocrystal, and wherein the semiconductor nanocrystal-polymer micronized composite has a particle diameter of less than or equal to about 70 micrometers (μm) with a standard deviation of less than or equal to about 20 micrometers (μm), and an aspect ratio of more than about 1.0 and less than or equal to about 10.

Подробнее
Номер записи: 36
13-06-2013 дата публикации

BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME

Номер: US20130148057A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KANG Hyun A
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer. 1. A backlight unit for a liquid crystal display device , the backlight unit comprising:an light emitting diode light source;a light conversion layer disposed separate from the light emitting diode light source to convert light emitted from the light emitting diode light source to white light and to provide the white light to a liquid crystal panel; anda light guide panel disposed between the light emitting diode light source and the light conversion layer,wherein the light conversion layer comprises a semiconductor nanocrystal and a polymer matrix, and a first polymerized product of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and', 'a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer., 'wherein the polymer matrix comprises'}2. The backlight unit for a liquid crystal display device of claim 1 , wherein the backlight unit further comprises a diffusion plate on a light guide panel claim 1 , and the light conversion layer is disposed between the light guide panel and the diffusion plate.3. The backlight unit for a ...

Подробнее
Номер записи: 37
04-07-2013 дата публикации

BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING SAME

Номер: US20130169904A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, JUNG Chul Ho, KANG Hyun A.
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A backlight unit for a liquid crystal display device including an light emitting diode light source; a light conversion layer disposed apart from the light emitting diode light source, wherein the light conversion layer is configured to convert light emitted from the light emitting diode light source to white light and provide the white light to a liquid crystal panel; and a light guide panel disposed between the light emitting diode light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, wherein the semiconductor nanocrystal is coated with a first polymer, and wherein the polymer matrix comprises a thermoplastic second polymer. 1. A backlight unit for a liquid crystal display device , comprisinga light emitting diode light source;a light conversion layer disposed apart from the light emitting diode light source, wherein the light conversion layer is configured to convert light emitted from the light emitting diode light source to white light and provide the white light to a liquid crystal panel; anda light guide panel disposed between the light emitting diode light source and the light conversion layer,wherein the light conversion layer comprises a semiconductor nanocrystal and a polymer matrix,{'sup': −', '+', '−', 'x+, 'sub': '(1/x)', 'the semiconductor nanocrystal is coated with a first polymer selected from a polymer comprising a carboxylic acid group (—C(═O)OH), a monovalent salt thereof (—C(═O)OM, wherein M is a monovalent cation), a multivalent salt thereof (—C(═O)O(M), wherein M is a cation having a valence of x wherein x is two or more), and a combination thereof, and'}{'sup': −', '+', '−', 'x+, 'sub': '(1/x)', 'the polymer matrix comprises a thermoplastic second polymer selected from a polyolefin; a cyclic olefin polymer; a polymer comprising a carboxylic acid group (—C(═O)OH), a monovalent salt thereof (—C(═O)OM, wherein M is a monovalent cation), a multivalent salt ...

Подробнее
Номер записи: 38
10-10-2013 дата публикации

FILM FOR BACKLIGHT UNIT AND BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING SAME

Номер: US20130265522A1
Автор: CHO Oul, HAN In Taek, JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, JUNG Chul Ho, KANG Hyun A., KWON Soo Kyung, LEE Won Joo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: 1. A film for a backlight unit , comprisinga semiconductor nanocrystal-polymer composite film comprising a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed,wherein the matrix polymer comprises a polymerization product of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent,the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 milligram of KOH/gram, and{'sub': 1', '2', '3, 'claim-text': {'br': None, 'i': A', 'A', '+A, 'sub': 1', '2', '3, '<().\u2003\u2003Equation 1'}, 'a content (A) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 12. A film for a backlight unit of claim 1 , wherein a weight ratio of the content (A) of the first structural unit derived from the multifunctional photo-curable ...

Подробнее
Номер записи: 39
13-03-2014 дата публикации

BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME

Номер: US20140071381A1
Автор: CHO Oul, JANG Eun-Joo, KANG Hyun-A
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A backlight unit for a liquid crystal display device including a liquid crystal panel, includes: a light source including a light-emitting diode (“ED”) which generates and emits light; and a light converting layer between the light source and the liquid crystal panel, spaced apart from the light source, and converting the light from the light source into white light and emitting the white light toward the liquid crystal panel. The light converting layer includes: semiconductor nanocrystals, and a barrier material which restricts penetration of moisture or oxygen. 1. A backlight unit for a liquid crystal display device comprising a liquid crystal panel , the backlight unit comprising:a light source comprising a light-emitting diode which generates and emits light; anda light converting layer between the light source and the liquid crystal panel, and spaced apart from the light source, wherein the light converting layer converts the light from the light source into white light and emits the white light toward the liquid crystal panel, semiconductor nanocrystals, and', 'a barrier material which restricts penetration of moisture or oxygen., 'the light converting layer comprising2. The backlight unit of claim 1 , wherein the light converting layer further comprises:a transparent substrate,a light converting film on a surface of the transparent substrate, and comprising the semiconductor nanocrystals, anda barrier layer on a surface of the light converting film, and comprising the barrier material.3. The backlight unit of claim 2 , wherein the barrier layer is further on a surface of the transparent substrate claim 2 , opposite to the surface of the light converting film.4. The backlight unit of claim 1 , wherein the light converting layer further comprises:a light converting film comprising the semiconductor nanocrystals, anda barrier layer on a surface of the light converting film, and comprising the barrier material.5. The backlight unit of claim 1 , wherein the light ...

Подробнее
Номер записи: 40
07-01-2016 дата публикации

COMPOSITIONS AND POLYMER COMPOSITES PREPARED FROM THE SAME

Номер: US20160005932A1
Автор: JANG Eun Joo, KANG Hyun A., LEE Jeong Hee, Won Na Youn
Принадлежит:

A composition including: a monomer mixture including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end; and at least one additive selected from a zinc compound, an indium compound, ascorbic acid or a salt thereof, citric acid or a salt thereof, a tocopherol, and a tocotrienol. 1. A composition comprising:a monomer mixture comprising a first monomer comprising at least two thiol groups at its terminal end and a second monomer comprising at least two carbon-carbon unsaturated bond-containing groups at its terminal end; andat least one additive selected from a zinc compound, an indium compound, ascorbic acid or a salt thereof, citric acid or a salt thereof, a tocopherol, and a tocotrienol.2. The composition of claim 1 , further comprising a light emitting particle selected from a Group II-VI compound semiconductor nanocrystal claim 1 , a Group III-V compound semiconductor nanocrystal claim 1 , a Group IV-VI compound semiconductor nanocrystal claim 1 , and a Group IV compound semiconductor nanocrystal.3. The composition of claim 2 , further comprising at least one light emitting particle selected from a metal nanocrystal claim 2 , a metal oxide nanocrystal claim 2 , a phosphor claim 2 , and a pigment.4. The composition of claim 1 , wherein the first monomer is represented by Chemical Formula 1:{'br': None, 'sup': '1', 'sub': k1', '1', '1', 'm', 'k2, '[R\ue8a0L\ue8a0Y—(SH)]\u2003\u2003Chemical Formula 1'}wherein, in Chemical Formula 1,{'sup': '1', 'sub': '2', 'Ris selected from hydrogen; a substituted or unsubstituted C1 to C30 linear or branched alkyl group; a substituted or unsubstituted C6 to C30 aryl group; a substituted or unsubstituted C7 to C30 arylalkyl group; a substituted or unsubstituted C3 to C30 heteroaryl group; a substituted or unsubstituted C4 to C30 heteroarylalkyl group; a substituted or unsubstituted C3 to C30 cycloalkyl ...

Подробнее
Номер записи: 41
07-01-2021 дата публикации

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20210005834A1
Автор: CHUNG Dae Young, Han Moon Gyu, JANG Eun Joo, KIM Sung Woo, LEE Heejae
Принадлежит:

A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer. 1. A light emitting device , comprising:a first electrode and a second electrode with a surface facing the first electrode;an emission layer disposed between the first electrode and the second electrode and comprising a quantum dot; andan electron auxiliary layer disposed between the emission layer and the second electrode,wherein the electron auxiliary layer comprises a first layer proximate to the emission layer and comprising a first metal oxide, and a second layer disposed on the first layer and proximate to the second electrode, the second layer comprising a second metal oxide, andwherein an interface roughness between the second layer and the surface of the second electrode is less than about 10 nanometers as determined by an electron microscopy analysis.2. The light emitting device of claim 1 , wherein the emission layer does not comprise cadmium.3. The light emitting device of claim 1 , wherein an amount of carbon in the first layer is greater than an amount of carbon in the second ...

Подробнее
Номер записи: 42
03-01-2019 дата публикации

QUANTUM DOTS AND DEVICES INCLUDING THE SAME

Номер: US20190006556A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, Kim Tae Hyung, KIM Taekhoon, KIM Yongwook, MIN Jihyun, PARK Garam, WON Yuho
Принадлежит:

A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium. 1. A core-shell quantum dot including at least two different halogens ,the core-shell quantum dot comprising:a core comprising a first semiconductor nanocrystal; anda shell disposed on the core, the shell comprising a crystalline or amorphous material,wherein the core-shell quantum dot does not include cadmium,wherein a solid state photoluminescence quantum efficiency of the core-shell quantum dot, when measured at 90° C. or greater, is greater than or equal to about 95% of a solid state photoluminescence quantum efficiency of the core-shell quantum dot when measured at 25° C., andwherein the at least two different halogens comprise fluorine and at least one of chlorine, bromine, and iodine.2. The core-shell quantum dot of claim 1 , wherein the at least two different halogens consist of either fluorine and chlorine or fluorine and bromine.3. The core-shell quantum dot of wherein the first semiconductor nanocrystal comprises indium and phosphorous and the crystalline or amorphous material of the shell comprises zinc and at least one of sulfur and selenium.4. The core-shell quantum dot of claim 1 , wherein a solid state photoluminescence quantum efficiency of the core-shell quantum dot when measured at 100° C. is greater than or equal to about 95% of the solid state photoluminescence quantum efficiency of the core-shell quantum dot when measured at 25° C.5. The core-shell quantum dot of claim 1 , wherein a solid state photoluminescence quantum efficiency of the core-shell quantum dot when measured at a 150° C. is greater than or equal to about 80% of the solid state photoluminescence quantum efficiency of the core-shell quantum dot when measured at 25° C.6. The core-shell quantum dot of claim 1 , wherein each halogen is present ...

Подробнее
Номер записи: 43
18-01-2018 дата публикации

INDIUM-BASED QUANTUM DOTS AND PRODUCTION METHODS THEREOF

Номер: US20180016495A1
Автор: Alivisatos Paul, BEKENSTEIN Yehonadav, JANG Eun Joo, KIM Tae Gon
Принадлежит:

An indium-containing quantum dot including a compound represented by Chemical Formula 1: 1. An indium-containing quantum dot comprising a compound represented by Chemical Formula 1:{'br': None, 'sub': 1-x', 'x, 'InMA \u2003\u2003Chemical Formula 1'}wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1,wherein the indium-containing quantum dot comprises fluorine and oxygen, each of which are bonded to a surface of the indium-containing quantum dot,wherein an amount of the fluorine is greater than or equal to about 10 atomic percent, based on a total number of indium atoms in the indium-containing quantum dot, as determined by Rutherford backscattering analysis, andwherein an amount of the oxygen is between about 5 atomic percent and about 50 atomic percent, based on the total number of indium atoms in the indium-containing quantum dot, as determined by Rutherford backscattering analysis.2. The indium-containing quantum dot of claim 1 , wherein in Chemical Formula 1 claim 1 , the A is phosphorous.3. The indium-containing quantum dot of claim 1 , wherein in Chemical Formula 1 claim 1 , the A is arsenic or antimony.4. The indium-containing quantum dot of claim 1 , wherein the indium-containing quantum dot has a ratio of indium atoms to the A atoms greater than or equal to about 1.2 claim 1 , as determined by Rutherford backscattering analysis.5. The indium-containing quantum dot of claim 1 , wherein the amount of the fluorine is greater than or equal to about 40 atomic percent claim 1 , based on the total number of indium atoms in the indium-containing quantum dot claim 1 , as determined by Rutherford backscattering analysis claim 1 , andwherein the amount of the oxygen is about 30 atomic percent to about 50 atomic percent, based on the total number indium atoms in the indium-containing quantum dot, as determined ...

Подробнее
Номер записи: 44
10-02-2022 дата публикации

QUANTUM DOTS AND DEVICES INCLUDING THE SAME

Номер: US20220041930A1
Автор: JANG Eun Joo, JANG Hyo Sook, MIN Jihyun, WON Yuho
Принадлежит:

A cadmium free quantum dot including a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal, a production method thereof, and a device including the same are disclosed. The semiconductor nanocrystal shell includes a zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dot further alkaline an alkaline earth metal. 1. A quantum dot comprisinga core comprising a first semiconductor nanocrystal, anda semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal,wherein the quantum dot does not comprise cadmium,wherein the semiconductor nanocrystal shell comprises a zinc chalcogenide,wherein the zinc chalcogenide comprises selenium, tellurium, sulfur, or a combination thereof, andwherein the quantum dot further comprises an alkaline earth metal.2. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal does not comprise an indium phosphide.3. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal comprises zinc claim 1 , tellurium claim 1 , and selenium.4. The quantum dot of claim 3 , wherein in the quantum dot claim 3 , a mole ratio of tellurium with respect to selenium is greater than 0:1 and less than or equal to about 0.1:1.5. The quantum dot of claim 1 , wherein the alkaline earth metal comprises barium claim 1 , strontium claim 1 , calcium claim 1 , magnesium claim 1 , or a combination thereof.6. The quantum dot of claim 5 , wherein the alkaline earth metal is present in the semiconductor nanocrystal shell.7. The quantum dot of claim 1 , wherein in the quantum dot claim 1 , an amount of the alkaline earth metal is greater than or equal to about 0.001 moles and less ...

Подробнее
Номер записи: 45
24-01-2019 дата публикации

PROCESSES FOR SYNTHESIZING NANOCRYSTALS

Номер: US20190023571A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae
Принадлежит:

A process of synthesizing Ga—Se nanocrystals is provided, the process including: 115.-. (canceled)16. A nanoparticle including a nanocrystal of a compound represented by Chemical Formula 1 or Chemical Formula 1-1:{'br': None, 'sub': x', 'y, 'GaSeA\u2003\u2003[Chemical Formula 1]'}{'br': None, 'sub': 'x', 'GaSe\u2003\u2003[Chemical Formula 1-1]'}wherein x is about 1.1 to 1.5, y is about 0.1 to 4, and A is S, Te, N, P, As, Al, In, Zn, Cd, Mg, Mn, Ag, Au, or a combination thereof.171. The nanoparticle of claim , wherein the nanoparticle comprises the nanocrystal of the compound represented by Chemical Formula 1-1.181. The nanoparticle of claim , wherein x is greater than or equal to about 1.2191. The nanoparticle of claim , wherein x is less than or equal to about 1.36.201. The nanoparticle of claim , wherein the nanocrystal of the compound represented by Chemical Formula 1 or Chemical Formula 1-1 is a selenium-rich Ga—Se nanocrystal.211. The nanoparticle of claim , wherein the A is S , Te , N , P , As , Al , Zn , Cd , Mg , Mn , Ag , Au , or a combination thereof.221. The nanoparticle of claim , wherein the nanoparticle has a core shell structure comprising a first nanocrystal and the nanocrystal of the compound represented by Chemical Formula 1 or Chemical Formula 1-1 is disposed on a surface of the first nanocrystal.23. The nanoparticle of claim 22 , wherein the first nanocrystal comprises a Group II-VI compound claim 22 , a Group III-V compound claim 22 , a Group IV-VI compound claim 22 , or a combination thereof.24. The nanoparticle of claim 23 , wherein the Group III-V compound further includes a Group II metal.25. The nanoparticle of claim 22 , wherein the first nanocrystal comprises a Group semiconductor nanocrystal core.26. The nanoparticle of claim 22 , wherein the first nanocrystal is a core-shell type semiconductor nanocrystal.27. The nanoparticle of claim 22 , wherein the first nanocrystal comprises ZnS claim 22 , ZnSe claim 22 , ZnTe claim 22 , ZnO claim ...

Подробнее
Номер записи: 46
23-01-2020 дата публикации

QUANTUM DOTS, PRODUCTION METHOD THEREOF, AND COMPOSITE AND ELECTRONIC DEVICE INCLUDING THE SAME

Номер: US20200024512A1
Автор: JANG Eun Joo, JANG Hyo Sook, KIM Seon-Yeong, Kim Yong Wook, KWON Soo Kyung, MIN Jihyun
Принадлежит:

A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof. 1. A quantum dot , comprisinga semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core,wherein the quantum dot does not comprise cadmium,the core comprises a Group III-V compound comprising a group III metal and a group V element,the quantum dot has a maximum photoluminescence peak in a green light wavelength region,a full width at half maximum of the maximum photoluminescence peak is less than about 50 nanometers, anda difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers.2. The quantum dot of claim 1 , wherein the green light wavelength region is greater than or equal to about 500 nanometers and less than or equal to about 560 nanometers.3. The quantum dot of claim 1 , wherein the full width at half maximum of the maximum photoluminescence peak is less than or equal to about 35 nanometers.4. The quantum dot of claim 1 , wherein the quantum dot comprises indium and zinc.5. The quantum dot of claim 1 , wherein the quantum dot has a size of greater than or equal to about 5 nanometers and less than or equal to about 8 nanometers.6. The quantum dot of claim 1 , wherein the quantum dot has quantum efficiency of greater than or equal to about 80%.7. The quantum dot of claim 1 , wherein the ...

Подробнее
Номер записи: 47
28-01-2016 дата публикации

OPTICAL ELEMENTS AND ELECTRONIC DEVICES INCLUDING THE SAME

Номер: US20160027963A1
Автор: Demir Hilmi Volkan, ERDEM Talha, GUNGOR Kivanc, GUZELTURK Burak, JANG Eun Joo, JUN Shin Ae, URAN Can
Принадлежит:

An optical element includes a plurality of nanowires disposed in the form of an array and a light emitting material disposed on the nanowires, where the nanowires are longitudinally aligned in the array to linearly polarize at least a portion of light emitted from the light emitting material, and an electronic device includes the optical element. 1. An optical element , comprising:an plurality of nanowires disposed in the form of an array; anda light emitting material disposed on the nanowires,wherein the nanowires are longitudinally aligned in the array to linearly polarize at least a portion of light emitted from the light emitting material.2. The optical element of claim 1 , further comprising:a transparent substrate,wherein the nanowires are disposed on the transparent substrate.3. The optical element of claim 2 , wherein the transparent substrate is flexible.4. The optical element of claim 1 , wherein the nanowires comprises a magnetic nanowire.5. The optical element of claim 4 , wherein the magnetic nanowires comprises a first segment having magnetism and a second segment capable of causing surface plasmon resonance.6. The optical element of claim 5 , whereinthe first segment comprises nickel, cobalt, iron, oxidized iron, or a combination thereof, andthe second segment comprises gold, silver, copper, platinum, or a combination thereof.7. The optical element of claim 1 , wherein the nanowire has a diameter of less than or equal to about 300 nanometers and an aspect ratio of greater than or equal to about 10.8. The optical element of claim 1 , wherein the array of the nanowires has a single layer structure or a multi-layer structure.9. The optical element of claim 1 , wherein the light emitting material comprises a semiconductor nanocrystal claim 1 , a nano-sized inorganic phosphor claim 1 , or a combination thereof.10. The optical element of claim 1 , whereinthe light emitting material comprises a quantum dot having a diameter in a range of about 2 nanometers ...

Подробнее
Номер записи: 48
23-01-2020 дата публикации

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20200028105A1
Автор: CHUNG Dae Young, Han Moon Gyu, JANG Eun Joo, PARK Sujin, SEO Hongkyu
Принадлежит:

A light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and an electron auxiliary layer disposed between the emission layer and the second electrode, the electron auxiliary layer including nanoparticles and a small molecule organic compound and a display device including the same. The nanoparticles include a metal oxide including zinc, and an electron mobility of the small molecule organic compound is less than an electron mobility of the nanoparticles. 1. A light emitting device , comprisinga first electrode and a second electrode facing each other,an emission layer disposed between the first electrode and the second electrode, the emission layer comprising quantum dots, andan electron auxiliary layer disposed between the emission layer and the second electrode, the electron auxiliary layer comprising nanoparticles and a small molecule organic compound,wherein the nanoparticles comprise a metal oxide comprising zinc, andan electron mobility of the small molecule organic compound is less than an electron mobility of the nanoparticles.2. The light emitting device of claim 1 , wherein a work function of the first electrode is greater than a work function of the second electrode.3. The light emitting device of claim 1 , wherein the first electrode comprises indium tin oxide.4. The light emitting device of claim 1 , wherein the second electrode comprises a conductive metal.5. The light emitting device of claim 1 , wherein the quantum dots do not comprise cadmium.6. The light emitting device of claim 1 , wherein the quantum dots comprise indium and phosphorous.7. The light emitting device of claim 1 , wherein the quantum dots comprise a chalcogen element and zinc.8. The light emitting device of claim 1 , wherein an absolute value of a lowest unoccupied molecular orbital energy level of the quantum dots is less ...

Подробнее
Номер записи: 49
04-02-2016 дата публикации

COMPOSITION FOR ADHESION LAYER OF GAS BARRIER ADHESIVE SHEET, GAS BARRIER ADHESIVE SHEET, AND OPTICAL SHEET HAVING GAS BARRIER ADHESIVE SHEET

Номер: US20160032160A1
Автор: JANG Eun Joo, KANG Hyun A., KOH Haeng Deog
Принадлежит:

A composition for an adhesion layer of a gas barrier adhesive sheet including a gas blocking film and an adhesion layer including at least one compound selected from a compound represented by Chemical Formula 1, at least one compound selected from a compound represented by Chemical Formula 2, and optionally, a compound represented by Chemical Formula 3. 2. The composition of claim 1 , comprising the compound represented by Chemical Formula 1 claim 1 , the compound represented by Chemical Formula 2 claim 1 , and the compound represented by Chemical Formula 3.3. The composition of claim 1 , wherein the composition for an adhesion layer of a gas barrier adhesive sheet comprises about 70 percent by weight to about 99 percent by weight of the at least one compound of the compound represented by Chemical Formula 1 and the compound represented by Chemical Formula 2 claim 1 , and about 1 percent by weight to about 30 percent by weight of the compound represented by Chemical Formula 3 claim 1 , based on the total weight of the composition.6. The composition of claim 1 , wherein the compound represented by Chemical Formula 3 is N-mercaptopropyltrimethoxysilane or 3-(trimethoxysilyl)propylmethacrylate.7. The composition of claim 1 , further comprising a photoinitiator.8. A gas barrier adhesive sheet comprising a gas barrier layer and an adhesion layer disposed on the gas barrier layer claim 1 , wherein the adhesion layer is a product of the composition of .9. The gas barrier adhesive sheet of claim 8 , wherein the adhesion layer is manufactured by coating the composition on the gas barrier layer and curing the composition.10. The gas barrier adhesive sheet of claim 9 , wherein the curing comprises photocuring claim 9 , thermal curing claim 9 , or a combination thereof.11. The gas barrier adhesive sheet of claim 8 , wherein the gas barrier layer comprises SiO claim 8 , TiO claim 8 , ZrO claim 8 , ZnO claim 8 , AlO claim 8 , indium tin oxide claim 8 , or a combination thereof.12 ...

Подробнее
Номер записи: 50
01-02-2018 дата публикации

NANOCRYSTAL POLYMER COMPOSITES AND PRODUCTION METHODS THEREOF

Номер: US20180031926A1
Автор: CHO Oul, JANG Eun Joo, JUN Shin Ae, KANG Hyun A, Won Na Youn
Принадлежит:

A semiconductor nanocrystal composition including a semiconductor nanocrystal, an organic additive, and at least one polymerizable substance selected from a polymerizable monomer, a polymerizable oligomer, and a combination thereof, wherein the composition has haze of greater than or equal to about 40% after polymerization. 1. A display device comprising a layer of a semiconductor nanocrystal-polymer composite ,wherein the semiconductor nanocrystal-polymer composite comprises:a semiconductor nanocrystal,an organic additive, anda polymerization product of at least one polymerizable substance selected from a polymerizable monomer, a polymerizable oligomer, and a combination thereof, andwherein the organic additive comprises a primary amine having one C8 to C30 alkyl or alkenyl group, a secondary amine having two C8 to C30 alkyl or alkenyl groups, a tertiary amine having three C8 to C30 alkyl or alkenyl groups, a primary phosphine having one C8 to C30 alkyl or alkenyl group, a secondary phosphine having two C8 to C30 alkyl or alkenyl groups, a tertiary phosphine having three C8 to C30 alkyl or alkenyl groups, a primary phosphine oxide having one C8 to C30 alkyl or alkenyl group, a secondary phosphine oxide having two C8 to C30 alkyl or alkenyl groups, a tertiary phosphine oxide having three C8 to C30 alkyl or alkenyl groups, or a combination thereof.2. The display device of claim 1 , wherein the semiconductor nanocrystal-polymer composite has a haze of greater than or equal to 40%.3. The display device of claim 1 , wherein the polymerizable substance comprises a polymerizable monomer and a polymerizable oligomer.4. The display device of claim 1 , wherein the semiconductor nanocrystal comprises a Group II-VI compound claim 1 , a Group III-V compound claim 1 , a Group IV-VI compound claim 1 , a Group IV element or compound claim 1 , or a combination thereof.5. The display device of claim 1 , wherein the semiconductor nanocrystal has a core-shell structure.6. The display ...

Подробнее
Номер записи: 51
01-05-2014 дата публикации

COMPOSITION FOR PREPARING SEMICONDUCTOR NANOCRYSTAL PARTICLE, AND METHOD OF PREPARING SEMICONDUCTOR NANOCRYSTAL USING SAME

Номер: US20140117286A1
Автор: IM Seoung-jae, JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A composition for preparing a semiconductor nanocrystal, the composition including (i) a Group II and/or Group III precursor, (ii) a Group VI and/or Group V precursor, (iii) an acid anhydride or acyl halide, and (iv) a solvent. 1. A composition for preparing a nanocrystal , the composition comprising:(i) a Group II and/or Group III precursor;(ii) a Group VI and/or Group V precursor;(iii) an acid anhydride or acyl halide; and(iv) a solvent.2. The composition of claim 1 , wherein the acid anhydride comprises:at least one fatty acid anhydride selected from oleic anhydride, linolenic anhydride, stearic anhydride, lauric anhydride, and palmitic anhydride,at least one anhydride of phosphonic acid selected from hexyl phosphonic acid, n-octyl phosphonic acid, tetradecyl phosphonic acid, and octadecyl phosphonic acid, orat least one cyclic anhydride selected from succinic anhydride and (2-dodecen-1-yl)succinic anhydride.3. The composition of claim 1 , wherein an amount of the acid anhydride or acyl halide in the composition is about 20 mol % to about 90 mol % based on the total of 100 mol % of (i) the Group II and/or Group III precursor claim 1 , (ii) the Group VI and/or Group V precursor claim 1 , and (iii) the acid anhydride or acyl halide.4. The composition of claim 1 , wherein the nanocrystal is a core of a semiconductor nanocrystal.5. The composition of claim 1 , wherein the nanocrystal is a semiconductor nanocrystal comprising a passivation shell layer formed from the Group II and the Group VI precursor and/or a passivation shell layer formed from the Group III precursor and the Group V precursor on a surface of a semiconductor nanocrystal core.6. The composition of claim 1 , wherein (i) the Group II and/or Group III precursor claim 1 , (ii) the Group VI and/or Group V precursor claim 1 , and (iii) the acid anhydride or acyl halide is each present as an individual compound.7. The composition of claim 1 , wherein (i) the Group II and/or Group III precursor and (ii) the ...

Подробнее
Номер записи: 52
01-05-2014 дата публикации

SEMICONDUCTOR NANOCRYSTAL, AND METHOD OF PREPARING THE SAME

Номер: US20140117292A1
Автор: JANG Eun Joo, JUN Shin Ae, KIM Taek Hoon, KWON Soo Kyung, LEE Won Joo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSeS, wherein 0≦x≦1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1. 1. A nanocrystal comprising:a core comprising a Group III element and a Group V element; and{'sub': x', '(1-x), 'a monolayer shell disposed on a surface of the core, the shell comprising a compound of the formula ZnSeS,'}wherein 0≦x≦1, andwherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.2. The nanocrystal of claim 1 , wherein the average mole ratio of Se:S in the monolayer shell ranges from about 3:1 to about 10:1.3. The nanocrystal of claim 1 , wherein the core further comprises a Group II metal.4. The nanocrystal of claim 1 , wherein the core comprises a compound selected from GaN claim 1 , GaP claim 1 , GaAs claim 1 , GaSb claim 1 , AlN claim 1 , AlP claim 1 , AlAs claim 1 , AlSb claim 1 , InN claim 1 , InP claim 1 , InAs claim 1 , and InSb claim 1 , GaNP claim 1 , GaNAs claim 1 , GaNSb claim 1 , GaPAs claim 1 , GaPSb claim 1 , AlNP claim 1 , AlNAs claim 1 , AlNSb claim 1 , AlPAs claim 1 , AlPSb claim 1 , InNP claim 1 , InNAs claim 1 , InNSb claim 1 , InPAs claim 1 , InPSb claim 1 , GaAlNP claim 1 , AlGaN claim 1 , AlGaP claim 1 , AlGaAs claim 1 , AlGaSb claim 1 , InGaN claim 1 , InGaP claim 1 , InGaAs claim 1 , InGaSb claim 1 , AlInN claim 1 , AlInP claim 1 , AlInAs claim 1 , and AlInSb claim 1 , GaAlNAs claim 1 , GaAlNSb claim 1 , GaAlPAs claim 1 , GaAlPSb claim 1 , GaInNP claim 1 , GaInNAs claim 1 , GaInNSb claim 1 , GaInPAs claim 1 , GaInPSb claim 1 , InAlNP claim 1 , InAlNAs claim 1 , InAlNSb claim 1 , InAlPAs claim 1 , InAlPSb claim 1 , and a combination thereof.5. The nanocrystal of claim 3 , wherein the Group II metal is selected from Zn claim 3 , Cd claim 3 , Hg claim 3 , Mg claim 3 , and a combination ...

Подробнее
Номер записи: 53
01-02-2018 дата публикации

QUANTUM DOTS AND DEVICES INCLUDING THE SAME

Номер: US20180033856A1
Автор: JANG Eun Joo, KIM Yongwook, KWON Soo Kyung, MIN Jihyun
Принадлежит:

A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot. 2. The quantum dot of claim 1 , wherein the Group III-V compound further comprises a Group II metal claim 1 , a Group IV metal claim 1 , or a combination thereof.3. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal further comprises a Group II-VI compound claim 1 , a Group IV-VI compound claim 1 , a Group I-III-VI compound claim 1 , a Group I-II-IV-VI compound claim 1 , or a combination thereof.4. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal comprises InP claim 1 , InZnP claim 1 , or a combination thereof.5. The quantum dot of claim 1 , wherein in the shell claim 1 , a molar ratio of sulfur with respect to selenium is greater than or equal to about 1.6. The quantum dot of claim 1 , wherein the shell comprises a first shell layer and a second shell layer adjacent to the first shell layer claim 1 , andwherein a composition of the first shell layer is different than a composition of the second shell layer.7. The quantum dot of claim 6 , wherein the shell comprises an outermost layer comprising ZnS.8. The quantum dot of claim 6 , wherein the shell comprises a layer comprising a third semiconductor nanocrystal disposed directly on the core claim 6 , andwherein a bandgap energy of the third semiconductor nanocrystal is greater than a ...

Подробнее
Номер записи: 54
17-02-2022 дата публикации

QUANTUM DOT DEVICE AND ELECTRONIC DEVICE

Номер: US20220052287A1
Автор: CHUNG Dae Young, Han Moon Gyu, JANG Eun Joo, Kim Tae Ho, SEO Hongkyu
Принадлежит:

A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less. 1. A quantum dot device , comprisingan anode and a cathode;a quantum dot layer between the anode and the cathode, the quantum dot layer including a plurality of quantum dots; anda hole transport layer located between the anode and the quantum dot layer,wherein the hole transport layer comprises a hole transport material and an electron transport material.2. The quantum dot device of claim 1 , wherein the electron transport material includes an organic electron transport material claim 1 , an inorganic electron transport material claim 1 , an organic-inorganic electron transport material claim 1 , or a combination thereof claim 1 , anda lowest unoccupied molecular orbital (LUMO) energy level of the organic electron transport material is about 2.7 electron volts to about 3.5 electron volts.3. The quantum dot device of claim 2 , wherein the inorganic electron transport material comprises an n-type metal oxide.4. The quantum dot device of claim 1 , whereinthe hole transport material comprises a polymer compound, andthe electron transport material comprises a low molecular weight compound, wherein the low molecular weight compound has a molecular weight of about 10,000 grams per mole (g/ ...

Подробнее
Номер записи: 55
17-02-2022 дата публикации

ELECTROLUMINESCENT DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE COMPRISING THE SAME

Номер: US20220052288A1
Автор: JANG Eun Joo, KIM Chan Su, KIM Jin A, KIM Sung Woo, Kim Tae Ho, Kim Tae Hyung, LEE Jeong Hee, PARK Kun Su
Принадлежит:

An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent. 1. An electroluminescent device , comprisinga first electrode and a second electrode facing each other;an emission layer disposed between the first electrode and the second electrode, the emission layer comprising light emitting particles;an electron transport layer disposed between the first electrode and the emission layer; anda hole transport layer disposed between the second electrode and the emission layer,wherein the electron transport layer comprisesinorganic oxide particles anda metal-organic compound or a thermal decomposition product of the metal-organic compound, andwherein the metal-organic compound comprises an oleate compound, an amine compound, or a combination thereof.2. The electroluminescent device of claim 1 , wherein the metal-organic compound comprises Zn claim 1 , Ti claim 1 , Sn claim 1 , W claim 1 , Ta claim 1 , Mg claim 1 , Ga claim 1 , Na claim 1 , Cu claim 1 , Ag claim 1 , or a combination thereof.3. The electroluminescent device of claim 1 , wherein the inorganic oxide particles comprise zinc claim 1 , titanium claim 1 , zirconium claim 1 , tin claim 1 , tungsten claim 1 , tantalum claim 1 , magnesium claim 1 , gallium claim 1 , sodium claim 1 , copper claim 1 , silver claim 1 , or a combination thereof. ...

Подробнее
Номер записи: 56
09-02-2017 дата публикации

QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME

Номер: US20170037309A1
Автор: CHOI Seong Jae, JANG Eun Joo, Jin Yong Wan, JUN Shin Ae, Kim Hyung Kun, KIM Mi Yang
Принадлежит:

Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured. 1. A quantum dot phosphor , comprising a plurality of quantum dots and a solid substrate on which the quantum dots are supported ,wherein the quantum dot comprises a Group II-VI compound semiconductor nanocrystal, a mixture of Group II-VI compound semiconductor nanocrystals, a Group III-V compound semiconductor nanocrystal, a mixture of Group III-V compound semiconductor nanocrystals, or a mixture of the Group II-VI compound semiconductor nanocrystal and the Group III-V compound semiconductor nanocrystal,wherein the solid substrate comprises an inorganic phosphor, a metal oxide, a polymer, an undoped metal salt, or a mixture thereof,wherein the quantum dots are disposed directly on an outer surface defining the solid substrate, each of the quantum dots being separated from one another.2. The quantum dot phosphor as set forth in claim 1 , wherein the Group II-VI compound semiconductor nanocrystal comprises CdS claim 1 , CdSe claim 1 , CdTe claim 1 , ZnS claim 1 , ZnSe claim 1 , ZnTe claim 1 , HgS claim 1 , HgSe or HgTe claim 1 , and the Group III-V compound semiconductor nanocrystals comprises GaN claim 1 , GaP claim 1 , GaAs claim 1 , AlN claim 1 , AlP claim 1 , AlAs claim 1 , InN claim 1 , InP claim 1 , or InAs.3. The quantum dot phosphor as set forth in claim 1 , wherein the mixture of the Group II-VI compound semiconductor nanocrystals is selected from the ...

Подробнее
Номер записи: 57
30-01-2020 дата публикации

QUANTUM DOT DEVICE AND DISPLAY DEVICE

Номер: US20200035857A1
Автор: JANG Eun Joo, KIM Chan Su, KIM Sung Woo, Kim Tae Ho, Kim Tae Hyung, PARK Kun Su
Принадлежит:

A quantum dot device including a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes an electron-transporting material represented by Chemical Formula 1 and an electron-controlling material capable of decreasing electron mobility of the electron auxiliary layer, and a display device. 1. A quantum dot device , comprisinga first electrode and a second electrode facing each other,a quantum dot layer disposed between the first electrode and the second electrode, andan electron auxiliary layer disposed between the quantum dot layer and the second electrode, {'br': None, 'sub': 1-x', 'x, 'ZnMO\u2003\u2003Chemical Formula 1'}, 'wherein the electron auxiliary layer comprises an electron-transporting material represented by Chemical Formula 1 and an electron-controlling material capable of decreasing electron mobility of the electron auxiliary layerwherein, in Chemical Formula 1,M is a metal except Zn, and0 Подробнее

Номер записи: 58
30-01-2020 дата публикации

QUANTUM DOT DEVICE AND DISPLAY DEVICE

Номер: US20200035935A1
Автор: JANG Eun Joo, KIM Chan Su, KIM Sung Woo, Kim Tae Ho, PARK Kun Su
Принадлежит:

A quantum dot device including an anode and a cathode facing each other, a quantum dot layer between the anode and the cathode and electron auxiliary layer between the quantum dot layer and the cathode, wherein the electron auxiliary layer includes at least one nanoparticle represented by Chemical Formula 1 and at least one metal halide represented by Chemical Formula 2, and a display device. 1. A quantum dot device , comprisingan anode and a cathode facing each other,a quantum dot layer between the anode and the cathode, andan electron auxiliary layer between the quantum dot layer and the cathode, {'br': None, 'sub': 1-x', 'x, 'ZnMO\u2003\u2003Chemical Formula 1'}, 'wherein the electron auxiliary layer comprises at least one nanoparticle represented by Chemical Formula 1 and at least one metal halide represented by Chemical Formula 2wherein, in Chemical Formula 1,M is Mg, Co, Ni, Zr, Mn, Sn, Y, Al, or a combination thereof, and {'br': None, 'sup': +', '−, 'QX\u2003\u2003Chemical Formula 2'}, '0≤x<0.5,'}wherein, in Chemical Formula 2,Q is Zn, Na, K, Li, or a combination thereof, andX is a halogen.2. The quantum dot device of claim 1 , wherein the metal halide is present between the nanoparticles.3. The quantum dot device of claim 1 , wherein the nanoparticle is passivated by the metal halide.4. The quantum dot device of claim 1 , wherein the metal halide is bound to a surface of the nanoparticle.5. The quantum dot device of claim 1 , wherein the nanoparticle has an average particle diameter of less than or equal to about 10 nanometers.6. The quantum dot device of claim 1 , wherein the metal halide is present in an amount of about 3 to about 20 parts by weight relative to 100 parts by weight of the nanoparticle.7. The quantum dot device of claim 1 , wherein the nanoparticle comprises a ligand bound to a surface of the nanoparticle.8. The quantum dot device of claim 7 , wherein the ligand comprises an acetate claim 7 , a carboxylate claim 7 , a cyano group claim 7 , ...

Подробнее
Номер записи: 59
12-02-2015 дата публикации

METHODS OF GRINDING SEMICONDUCTOR NANOCRYSTAL POLYMER COMPOSITE PARTICLES

Номер: US20150041715A1
Автор: CHO Oul, JANG Eun Joo, JUN Shin Ae, KANG Hyun A, KIM Tae Gon, Kim Tae Hyung, LEE Jeong Hee, LEE Sang Eui
Принадлежит:

A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite. 1. A method of grinding semiconductor nanocrystal-polymer composite particles , the method comprising:obtaining semiconductor nanocrystal-polymer composite particles comprising a semiconductor nanocrystal and a first polymer;contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; andlow-temperature grinding the semiconductor nanocrystal-polymer composite particles in the presence of the inert organic solvent to prepare semiconductor nanocrystal-polymer composite fine particles.2. The method of claim 1 , wherein the obtaining of the semiconductor nanocrystal-polymer composite comprises:obtaining semiconductor nanocrystals;dissolving a first polymer in an organic solvent to prepare a first polymer solution; andmixing the first polymer solution with the semiconductor nanocrystals to obtain the semiconductor nanocrystal-polymer composite particles.3. The method of claim 1 , wherein the contacting of the semiconductor nanocrystal-polymer composite particles with the inert organic solvent further comprises contacting the semiconductor nanocrystal-polymer composite with the inert organic solvent and a second polymer or a monomeric composition thereof.4. The method of claim 2 , wherein the mixing of the first polymer solution with the semiconductor nanocrystals comprises heating the first polymer solution and contacting the heated first polymer solution with the semiconductor nanocrystals.5. The method of claim 1 , wherein the semiconductor nanocrystals comprise a Group II-VI compound claim ...

Подробнее
Номер записи: 60
08-02-2018 дата публикации

ELECTRONIC DEVICE

Номер: US20180039103A1
Автор: CHUNG Chil Hee, CHUNG Dae Young, JANG Eun Joo, JANG Hyo Sook, Kim Tae Hyung, MIN Jihyun
Принадлежит:

An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode. 1. An electronic device comprising:an anode and a cathode facing each other;a quantum dot emission layer disposed between the anode and the cathode and comprising a plurality of quantum dots; andan excitation light emitting source,wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength,wherein the quantum dot emission layer and the excitation light emitting source are configured so that the excitation light emitting source provides the quantum dot emission layer with light having a second wavelength of about 300 nanometers to about 490 nanometers, and the plurality of quantum dots in the quantum dot emission layer are excited by the light of the second wavelength and emit light having a third wavelength which is greater than the second wavelength,wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, andwherein the light having the first wavelength and the light having the third wavelength are emitted through the light ...

Подробнее
Номер записи: 61
24-02-2022 дата публикации

InP-based NANOCLUSTER, AND METHOD OF PREPARING InP-based NANOPARTICLE

Номер: US20220056338A1
Автор: AGNES Anastasia, Bang Kyuhyun, JANG Eun Joo, JANG Hyo Sook, KIM Jeongmin, Kim Sungjee, Kim Yong Wook, Kwon Yong Ju, LEE Eunjae, MIN Jihyun, WON Yuho
Принадлежит:

The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof. 1. InP-based nanoclusters comprising indium and phosphorus , and further comprising zinc , chlorine , or a combination thereof.2. The InP-based nanoclusters of comprising the zinc.3. The InP-based nanoclusters of exhibiting a maximum absorption peak at a wavelength of about 393 nanometers.4. The InP-based nanoclusters of claim 3 , wherein a half-width at half-maximum of the maximum emission peak is less than or equal to about 15 nanometers.5. The InP-based nanoclusters of exhibiting a maximum absorption peak at a wavelength of about 408 nanometers.6. The InP-based nanoclusters of claim 5 , wherein a half-width at half-maximum of the maximum emission peak is less than or equal to about 20 nanometers.7. The InP-based nanoclusters of exhibiting a maximum absorption peak at the wavelength of about 360 nanometers.8. The InP-based nanoclusters of claim 7 , wherein a half-width at half-maximum of the maximum emission peak is less than or equal to about 30 nanometers.9. The InP-based nanoclusters of claim 2 , wherein the zinc is present in an amount of about 10 mole percent to about 40 mole percent relative to moles of indium.10. The InP-based nanoclusters of comprising chlorine.11. The InP-based nanoclusters of exhibiting a maximum absorption peak at the wavelength of about 399 nanometers.12. The InP-based nanoclusters of claim 11 , wherein a half-width at half-maximum of the maximum emission peak is less than or equal to about 10 nanometers.13. The InP-based nanoclusters of exhibiting a maximum absorption peak at the wavelength of about 360 nanometers.14. The InP-based nanoclusters of comprising zinc and chlorine claim 1 , wherein the chlorine is present in an amount of ...

Подробнее
Номер записи: 62
15-02-2018 дата публикации

COMPOSITIONS, QUANTUM DOT POLYMER COMPOSITES PREPARED THEREFROM, AND DEVICES INCLUDING THE SAME

Номер: US20180044583A1
Автор: JANG Eun Joo, JUN Shin Ae, KIM Tae Gon, KWON Ha Il, PARK Garam, PARK Shang Hyeun
Принадлежит:

A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent. 1. A composition comprising:a plurality of quantum dots;a binder polymer;a thiol compound comprising at least two thiol groups at its end terminals;a polyvalent metal compound;a polymerizable monomer comprising a carbon-carbon double bond;a photoinitiator; anda solvent, a copolymer of a monomer combination comprising a first monomer comprising a carboxylic acid group and a carbon-carbon double bond, a second monomer comprising a carbon-carbon double bond and a hydrophobic moiety and not comprising a carboxylic acid group, and optionally, a third monomer comprising a carbon-carbon double bond and a hydrophilic moiety and not comprising a carboxylic acid group;', 'a multiple aromatic ring-containing polymer comprising a carboxylic acid group (—COOH) and a main chain comprising a backbone structure incorporated in the main chain, wherein the backbone structure comprises a quaternary carbon atom, which is a part of a cyclic group, and two aromatic rings bound to the quaternary carbon atom; or', 'a combination thereof, and, 'wherein the binder polymer comprises'}wherein the thiol compound binds at least two quantum dots of the plurality of quantum dots to each other.2. The composition of claim 1 , wherein the plurality of the quantum dots are dispersed by the binder.3. The composition of claim 1 , wherein the quantum dot has an organic ligand on a surface thereof claim 1 , and wherein the organic ligand comprises RCOOH claim 1 , RNH claim 1 , RNH claim 1 , RN claim 1 , RSH claim 1 , RPO claim 1 , RP claim 1 , ROH claim 1 , RCOOR′ claim 1 , RPO(OH) claim 1 , RPOOH (wherein R and R′ are independently a C5 to C24 substituted or unsubstituted aliphatic hydrocarbon group or a C6 to C20 substituted or unsubstituted aromatic hydrocarbon ...

Подробнее
Номер записи: 63
15-02-2018 дата публикации

QUANTUM DOT AGGREGATE PARTICLES, PRODUCTION METHODS THEREOF, AND COMPOSITIONS AND ELECTRONIC DEVICES INCLUDING THE SAME

Номер: US20180044586A1
Автор: AHN Jooyeon, JANG Eun Joo, JUN Shin Ae, KIM Tae Gon, KWON Ha Il, WON Nayoun
Принадлежит:

A quantum dot aggregate particle including a plurality of quantum dots, a polyvalent metal compound, and a thiol compound having at least two thiol groups at its end terminals, wherein a size of the quantum dot aggregate particle is in a range from about 20 nanometers to 10 micrometers. 1. A quantum dot aggregate particle comprising:a plurality of quantum dots;a polyvalent metal compound; anda thiol compound comprising at least two thiol groups at its end terminals;wherein a size of the quantum dot aggregate particle is in a range from about 20 nanometers to about 10 micrometers.2. The quantum dot aggregate particle of claim 1 , wherein at least two quantum dots of the plurality of quantum dots are linked to each other by the polyvalent metal compound claim 1 , the thiol compound claim 1 , or a combination thereof.3. The quantum dot aggregate particle of claim 1 , wherein the quantum dot comprises a Group II-VI compound claim 1 , a Group III-V compound claim 1 , a Group IV-VI compound claim 1 , a Group IV element or compound claim 1 , a Group I-III-VI compound claim 1 , a Group I-II-IV-VI compound claim 1 , or a combination thereof.4. The quantum dot aggregate particle of claim 1 , wherein the polyvalent metal compound comprises Mg claim 1 , Ca claim 1 , Sc claim 1 , Ti claim 1 , V claim 1 , Cr claim 1 , Mn claim 1 , Fe claim 1 , Co claim 1 , Ni claim 1 , Cu claim 1 , Zn claim 1 , Ga claim 1 , Sr claim 1 , Y claim 1 , Zr claim 1 , Nb claim 1 , Mo claim 1 , Cd claim 1 , In claim 1 , Ba claim 1 , Au claim 1 , Hg claim 1 , Tl claim 1 , or a combination thereof.5. The quantum dot aggregate particle of claim 1 , wherein the polyvalent metal compound comprises an organometallic compound claim 1 , an organic salt claim 1 , an inorganic salt claim 1 , or a combination thereof.6. The quantum dot aggregate particle of claim 1 , wherein the polyvalent metal compound is represented by Chemical Formula 1:{'br': None, 'sub': 'n', 'MA\u2003\u2003Chemical Formula 1'}wherein M is Mg ...

Подробнее
Номер записи: 64
18-02-2016 дата публикации

PHOTOCONDUCTOR AND IMAGE SENSOR USING THE SAME

Номер: US20160049536A1
Автор: HWANG Jinyoung, JANG Eun Joo, KIM Tae Gon
Принадлежит:

A photoconductor includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, a first electrode connected to a first lateral side of the first semiconductor layer and the second semiconductor layer, and a second electrode connected to a second lateral side of the first semiconductor layer and the second semiconductor layer, where the first semiconductor layer and the second semiconductor layer form a type II junction or a quasi-type-II junction. 1. A photoconductor comprising:a first semiconductor layer;a second semiconductor layer disposed on the first semiconductor layer;a first electrode connected to a first lateral side of the first semiconductor layer and the second semiconductor layer; anda second electrode connected to a second lateral side of the first semiconductor layer and the second semiconductor layer,wherein the first semiconductor layer and the second semiconductor layer form a type II junction or a quasi-type-II junction.2. The photoconductor of claim 1 , whereinan energy difference between a conduction band of the first semiconductor layer and a conduction band of the second semiconductor layer is greater than or equal to about 0.1 eV, andan energy difference between a valence band of the first semiconductor layer and a valence band of the second semiconductor layer is greater than or equal to about 0.1 eV.3. The photoconductor of claim 1 , wherein each of the first semiconductor layer and the second semiconductor layer has a thickness in a range of about 5 nm to about 500 nm.4. The photoconductor of claim 2 , whereineach of the first semiconductor layer and the second semiconductor layer comprises a quantum dot material, andthe quantum dot material comprises a nanocrystal comprising at least one selected from Group IV, II-VI, III-V, III2-VI3, I-III-VI2, and I2-II-IV-VI4 semiconductors.5. The photoconductor of claim 4 , whereinthe quantum dot material further comprises a ligand coated on the surface ...

Подробнее
Номер записи: 65
06-02-2020 дата публикации

Light emitting device, method of manufacturing same and display device including same

Номер: US20200044173A1
Автор: Eun Joo Jang, Jeong Hee Lee, Oul CHO, Tae Ho Kim, Won Sik Yoon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.

Подробнее
Номер записи: 66
14-02-2019 дата публикации

SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME

Номер: US20190048259A1
Автор: CHUNG Dae Young, JANG Eun Joo, KANG Hyun A, Kim Tae Hyung
Принадлежит:

Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers. 1. A semiconductor nanocrystal particle , comprisingindium, zinc, and phosphorus,wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and a core, the core comprising a first semiconductor material comprising indium, zinc, and phosphorus, and', 'a shell disposed on the core, the shell comprising a second semiconductor material comprising zinc and sulfur., 'the semiconductor nanocrystal particle comprises'}2. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers claim 1 , and the semiconductor nanocrystal particle has quantum efficiency of greater than or equal to about 40%.3. The semiconductor nanocrystal particle of claim 1 , wherein the mole ratio of the zinc relative to the indium is greater than or equal to about 29:1.4. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle has a mole ratio of the sulfur relative to the indium of greater than or equal to about 18:1.5. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle has a mole ratio of the phosphorus relative to the indium of less than about 1:1.6. The semiconductor ...

Подробнее
Номер записи: 67
25-02-2016 дата публикации

STRIP, AND BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME

Номер: US20160054624A1
Автор: CHO Oul, JANG Eun Joo, KANG Hyun A
Принадлежит:

Disclosed is a mold frame including a first guide defining the position of a photoconversion layer and at least one of optical sheets disposed on the photoconversion layer, a backlight unit and a liquid crystal display including the same, and the like. The first guide includes a first surface facing the liquid crystal panel, a second surface opposite to the first surface, and a third surface extended from the edge of the first surface to the edge of second surface, wherein at least a portion of the second surface is provided with a strip, and wherein the strip is extended along the edge of the optical sheet or the photoconversion layer to overlap a region adjacent to the edge of the top surface of the optical sheet or adjacent to the edge of the top surface of the photoconversion layer. 1. A mold frame comprising:a first guide which defines a position of a photoconversion layer or a position of an optical sheet disposed on the photoconversion layer; anda strip disposed on the first guide, a first surface defined to face a liquid crystal panel;', 'a second surface opposite to the first surface; and', 'a third surface extending from an edge of first surface to an edge of second surface,, 'wherein the first guide compriseswherein the strip is disposed on the second surface, andwherein the strip contacts an edge portion of a top surface of the optical sheet or an edge portion of a top surface of the photoconversion layer when the optical sheet or the photoconversion layer is combined with the mold frame.2. The mold frame of claim 1 , wherein the first surface supports the liquid crystal panel.3. The mold frame of claim 1 , further comprising at least one of:a second guide disposed on the first guide and which defines a position of the liquid crystal panel; anda third guide disposed under the first guide and which further defines the position of the photoconversion layer or the position of the optical sheet.4. The mold frame of claim 1 , whereinthe second surface defines ...

Подробнее
Номер записи: 68
23-02-2017 дата публикации

PHOTOSENSITIVE COMPOSITIONS, PREPARATION METHODS THEREOF, AND QUANTUM DOT POLYMER COMPOSITE PREPARED THEREFROM

Номер: US20170052444A1
Автор: JANG Eun Joo, JUN Shin Ae, PAEK Hojeong, PARK Shang Hyeun
Принадлежит:

A photosensitive composition including a quantum dot dispersion, a reactive compound having at least two thiol groups, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes a carboxylic acid group-containing polymer and a quantum dot dispersed in the carboxylic acid group containing polymer, and wherein the carboxylic acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic moiety and not having a carboxylic acid group. 1. A photosensitive composition comprising:a carboxylic acid group-containing polymer;a quantum dot;a reactive compound comprising at least two thiol groups;a photopolymerizable monomer comprising a carbon-carbon double bond; and a photoinitiator,wherein the carboxylic acid group-containing polymer comprises a copolymer of a monomer combination comprising a first monomer comprising a carboxylic acid group and a carbon-carbon double bond and a second monomer comprising a carbon-carbon double bond and a hydrophobic moiety and not comprising a carboxylic acid group.2. The photosensitive composition of claim 1 , wherein the quantum dot comprises an organic ligand comprising a hydrophobic moiety bound to a surface thereof.3. The photosensitive composition of claim 2 , wherein the organic ligand does not comprise a photopolymerizable functional group.4. The photosensitive composition of claim 2 , wherein the organic ligand comprises RCOOH claim 2 , RNH claim 2 , RNH claim 2 , RN claim 2 , RSH claim 2 , RPO claim 2 , RP claim 2 , ROH claim 2 , RCOOR′ claim 2 , RPO(OH) claim 2 , RPOOH (wherein R and R′ are independently a C5 to C24 aliphatic hydrocarbon group or a C6 to C20 aromatic hydrocarbon group) claim 2 , a polymeric organic ligand claim 2 , or a combination thereof.5. The photosensitive ...

Подробнее
Номер записи: 69
15-05-2014 дата публикации

WHITE LIGHT EMITTING DEVICE

Номер: US20140131740A1
Автор: CHO Oul, JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KANG Hyun A., KWON Soo Kyung, LEE Won Joo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A light emitting device including: a blue light source; a phosphor; and a semiconductor nanocrystal, and emits white light having a R1-R8 average color rendering index (“CRI”) of greater than or equal to about 90, and a R9 red color rendering index (R9) of greater than or equal to about 90. 1. A light emitting device comprising:a blue light source;a phosphor; anda semiconductor nanocrystal,wherein the light emitting device emits white light having a R1-R8 average color rendering index of greater than or equal to about 90, and a R9 red color rendering index of greater than or equal to about 90.2. The light emitting device of claim 1 , wherein the light emitting device emits white light having a color temperature of about 2500 Kelvin to about 4000 Kelvin.3. The light emitting device of claim 1 , wherein the light source has a light emitting wavelength of about 440 nanometers to about 460 nanometers.4. The light emitting device of claim 1 , wherein the light source comprises a light emitting diode.5. The light emitting device of claim 1 , wherein the phosphor has a light emitting spectrum of about 510 nanometers to about 650 nanometers claim 1 ,the light emitting spectrum has a full width at half maximum of about 50 nanometers to about 130 nanometers, andthe phosphor has luminous efficiency of greater than or equal to about 70 percent.6. The light emitting device of claim 5 , wherein the phosphor has a difference between left and right full widths at half maximum from a peak wavelength of a light emitting spectrum of greater than or equal to about 5 nanometers.7. The light emitting device of claim 5 , wherein the phosphor comprises at least one of an oxide phosphor and a nitride phosphor.8. The light emitting device of claim 1 , wherein the semiconductor nanocrystal has a light emitting spectrum of about 620 nanometers to about 650 nanometers claim 1 ,the light emitting spectrum has a bilaterally symmetric light emitting spectrum having a full width at half maximum of ...

Подробнее
Номер записи: 70
25-02-2021 дата публикации

LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME AND DISPLAY DEVICE INCLUDING SAME

Номер: US20210057664A1
Автор: CHO Oul, JANG Eun Joo, Kim Tae Ho, LEE Jeong Hee, YOON Won Sik
Принадлежит:

A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds. 1. A method of manufacturing a light emitting device , the method comprising: a first electrode and a second electrode facing each other,', 'an emissive layer disposed between the first electrode and the second electrode and comprising a quantum dot, and', 'an electron auxiliary layer disposed between the emissive layer and the second electrode,, 'providing a stack structure comprising'}providing a polymer precursor mixture comprising a thiol compound having at least one thiol group and an unsaturated compound having at least two carbon-carbon unsaturated bonds;applying the polymer precursor mixture on the second electrode and on the electron auxiliary layer to form a polymer precursor layer; andpolymerizing the thiol compound and the unsaturated compound in the polymer precursor layer to form the light emitting device.2. The method of claim 1 , wherein the electron auxiliary layer comprises a plurality of nanoparticles.3. The method of claim 2 , wherein the plurality of nanoparticles comprises a metal oxide having a composition represented ...

Подробнее
Номер записи: 71
03-03-2016 дата публикации

PHOTOLUMINESCENT LAYERED COMPOSITE, BACKLIGHT UNIT, AND DISPLAY DEVICE INCLUDING THE COMPOSITE

Номер: US20160062021A1
Автор: CHO Oul, JANG Eun Joo, KANG Hyun A, KIM Yongwook, WON Nayoun
Принадлежит:

A photoluminescent layered composite includes: a light conversion layer including a first polymer matrix and a plurality of semiconductor nanocrystals dispersed in the first polymer matrix; and a metal oxide layer, wherein the metal oxide layer includes a plurality of conductive metal oxide particles, and wherein the metal oxide layer is disposed on at least one surface of the light conversion layer. Also a backlight unit and a display device include the same. 1. A photoluminescent layered composite , comprising:a light conversion layer comprising a first polymer matrix and a plurality of semiconductor nanocrystals dispersed in the first polymer matrix; anda metal oxide layer,wherein the metal oxide layer comprises a plurality of conductive metal oxide particles, andwherein the metal oxide layer is disposed on at least one surface of the light conversion layer.2. The photoluminescent layered composite of claim 1 , wherein the first polymer matrix comprises a thiol-ene resin claim 1 , a (meth)acrylate polymer claim 1 , a urethane resin claim 1 , an epoxy resin claim 1 , a vinyl polymer claim 1 , a silicone claim 1 , or a combination thereof.3. The photoluminescent layered composite of claim 1 , wherein the metal oxide layer is an antistatic layer.4. The photoluminescent layered composite of claim 1 , wherein the semiconductor nanocrystal comprises a Group II-VI compound claim 1 , a Group III-V compound claim 1 , a Group IV-VI compound claim 1 , a Group IV compound claim 1 , or a combination thereof.5. The photoluminescent layered composite of claim 1 , wherein the metal oxide layer comprises a particle layer comprising a plurality of conductive metal oxide particles.6. The photoluminescent layered composite of claim 1 , wherein the metal oxide layer comprises a second polymer matrix and a plurality of conductive metal oxide particles dispersed in the second polymer matrix.7. The photo luminescent layered composite of claim 6 , wherein the second polymer matrix ...

Подробнее
Номер записи: 72
04-03-2021 дата публикации

QUANTUM DOTS AND DEVICE INCLUDING THE SAME

Номер: US20210062087A1
Автор: CHUNG Heejae, HAN Yong Seok, JANG Eun Joo, JANG Hyo Sook, KIM Jin A, KIM Sung Woo, Kim Tae Hyung, LEE Jeong Hee, PARK Kun Su, WON Yuho
Принадлежит:

A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed. 1. A quantum dot comprising a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on a surface of the core , the shell comprising zinc , selenium , and sulfur ,wherein the quantum dot does not comprise cadmium, and is configured to emit blue light, andin an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1.2. The quantum dot of claim 1 , wherein a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image of the quantum dot comprises a (100) facet of a zinc blende structure.3. The quantum dot of claim 1 , wherein a maximum luminescent peak wavelength of the quantum dot is greater than or equal to about 430 nanometers and less than or equal to about 480 nanometers.4. The quantum dot of claim 1 , wherein a maximum luminescent peak of the quantum dot has a full width at half maximum of less than or equal to about 25 nanometers.5. The quantum dot of claim 1 , wherein the zinc chalcogenide comprises zinc and selenium claim 1 , and optionally tellurium.6. The quantum dot of claim 1 , wherein in ...

Подробнее
Номер записи: 73
10-03-2022 дата публикации

COPOLYMER, ELECTROLUMINESCENCE DEVICE MATERIAL INCLUDING COPOLYMER, AND ELECTROLUMINESCENCE DEVICE

Номер: US20220077394A1
Автор: CHUNG Dae Young, Fujiyama Takahiro, FURUTA Keigo, JANG Eun Joo, Kato Fumiaki, Kim Tae Ho, KONISHI Yusaku, KWON Ha Il, MOTOYAMA Takao, Tsuji Masashi, YOON Won Sik
Принадлежит:

A copolymer having a structural unit represented by Chemical Formula 1 is provided. The copolymer may improve performance, e.g., luminous efficiency, of an electroluminescence device. 6. A polymer composition comprising the copolymer of and a polymeric material having a HOMO level of greater than about −5.6 eV and less than or equal to about −5.3 eV.8. An electroluminescence device material claim 1 , comprising the copolymer of .9. An electroluminescence device material claim 6 , comprising the polymer composition of .10. An electroluminescence device claim 6 , comprisinga first electrode and a second electrode, andone or more organic layers disposed between the first electrode and the second electrode,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein at least one layer of the one or more organic layers includes the copolymer of .'}11. The electroluminescence device of claim 10 , wherein the at least one organic layer including the copolymer is a hole transport layer or a hole injection layer.12. The electroluminescence device of claim 10 , wherein the one or more organic layers is a light emitting layer comprising a semiconductor nanoparticle or an organometal complex.13. An electroluminescence device comprisinga first electrode and a second electrode, andone or more organic layers disposed between the first electrode and the second electrode,{'claim-ref': {'@idref': 'CLM-00006', 'claim 6'}, 'wherein at least one layer of the one or more organic layers includes the polymer composition of .'}14. The electroluminescence device of claim 13 , wherein the at least one organic layer including the polymer composition is a hole transport layer or a hole injection layer.15. The electroluminescence device of claim 13 , wherein the one or more organic layers is a light emitting layer comprising a semiconductor nanoparticle or an organometal complex. This application claims priority to Japanese Patent Application No. 2020-151518 filed in the Japan Patent Office on Sep ...

Подробнее
Номер записи: 74
02-03-2017 дата публикации

PHOTOSENSITIVE COMPOSITIONS, PREPRATION METHODS THEREOF, QUANTUM DOT POLYMER COMPOSITE PREPARED THEREFROM

Номер: US20170059986A1
Автор: HAN Yong Seok, JANG Eun Joo, JUN Shin Ae, KIM Jonggi, PAEK Hojeong, PARK Shang Hyeun, YANG Hyeyeon
Принадлежит:

A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group. 1. A photosensitive composition comprising:a quantum dot dispersion;a photopolymerizable monomer comprising a carbon-carbon double bond; anda photoinitiator,wherein the quantum dot dispersion comprises an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, andwherein the acid group-containing polymer comprises a copolymer of a monomer combination comprising a first monomer comprising a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer comprising a carbon-carbon double bond and a hydrophobic group and not comprising a carboxylic acid group and a phosphonic acid group.2. The photosensitive composition of claim 1 , wherein the quantum dots comprise an organic ligand with a hydrophobic group bound to a surface thereof claim 1 , and wherein the organic ligand does not comprise a photopolymerizable functional group.3. The photosensitive composition of claim 1 , wherein the acid group-containing polymer has an acid value of greater than or equal to about 120 milligrams of KOH per gram and less than or equal to about 200 milligrams of KOH per gram.4. The photosensitive composition of claim 2 , wherein the organic ligand comprises RCOOH claim 2 , RNH claim 2 , RNH claim 2 , RN claim 2 , RSH claim 2 , RPO claim 2 , ...

Подробнее
Номер записи: 75
01-03-2018 дата публикации

ELECTRIC DEVICE, AND DISPLAY DEVICE COMPRISING THE SAME

Номер: US20180062030A1
Автор: CHO Oul, CHUNG Dae Young, JANG Eun Joo, KANG Hyun A, Kim Tae Hyung, LEE Jeong Hee, WOO Yun Sung
Принадлежит:

An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode. 1. An electronic device comprisinga first electrode and a second electrode facing each other;an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode;a first charge auxiliary layer disposed between the first electrode and the emission layer; andan optical functional layer disposed on the second electrode on a side opposite the emission layer,wherein the first electrode comprises a reflecting electrode,wherein the second electrode is a light-transmitting electrode,wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, andwherein a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.2. The electronic device of claim 1 , wherein the refractive index of the optical functional layer ranges from about 1.5 to about 2.5.3. The electronic device of claim 1 , wherein the optical functional layer comprises a triarylamine compound claim 1 , a diarylamine compound claim 1 , a carbazole compound claim 1 , or a combination thereof.4. The electronic device of claim 1 , wherein ...

Подробнее
Номер записи: 76
04-03-2021 дата публикации

SEMICONDUCTOR NANOCRYSTAL PARTICLE, METHOD FOR PREPARING SAME, AND DEVICE INCLUDING SAME

Номер: US20210066543A1
Автор: HAN Yong Seok, JANG Eun Joo, JANG Hyo Sook, KIM Jin A, KIM Sung Woo, Kim Tae Hyung, LEE Jeong Hee, PARK Kun Su, WON Yuho
Принадлежит:

A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed. 1. A quantum dot comprisinga core comprising a first semiconductor nanocrystal comprising zinc and selenium, and optionally sulfur and/or tellurium, anda shell comprising a second semiconductor nanocrystal comprising zinc and at least one of sulfur or selenium,wherein the quantum dot has an average particle diameter of greater than or equal to about 13 nanometers, an emission peak wavelength in a range of about 440 nanometers to about 470 nanometers, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nanometers,wherein the quantum dot is cadmium-free.2. The quantum dot of claim 1 , wherein the quantum dot has an average particle diameter of about 13 nanometers to about 20 nanometers claim 1 , and an emission peak wavelength in a range of about 445 nanometers to about 460 nanometers.3. The quantum dot of claim 1 , wherein the quantum dot exhibits a quantum efficiency of greater than or equal to about 70%.4. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal comprises zinc and selenium claim 1 , or zinc claim 1 , selenium claim 1 , and tellurium.5. The quantum dot of claim 1 , wherein the second semiconductor nanocrystal comprises zinc and selenium claim 1 , or zinc and sulfur.6. The quantum dot of claim 1 , wherein the ...

Подробнее
Номер записи: 77
04-03-2021 дата публикации

ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THE SAME

Номер: US20210066633A1
Автор: CHUNG Dae Young, JANG Eun Joo, LEE Yeonkyung, SEO Hongkyu
Принадлежит:

An electroluminescent device and a display device including the device are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; an emission layer disposed on the hole transport layer, the emission layer including quantum dots; 1. An electroluminescent device comprisinga first electrode;a hole transport layer disposed on the first electrode;an emission layer disposed on the hole transport layer, the emission layer comprising quantum dots;a self-assembled monomolecular layer disposed on the emission layer, the self-assembled monomolecular layer comprising self-assembled monomolecules;an electron transport layer disposed on the self-assembled monomolecular layer; anda second electrode disposed on the electron transport layer.2. The electroluminescent device of claim 1 , wherein the self-assembled monomolecules are attached to the surface of the quantum dots.3. The electroluminescent device of claim 2 , whereinthe self-assembled monomolecules have a first terminal end proximate to the surface of the quantum dots and a second terminal end distal from the surface of the quantum dots, andthe first terminal end forms a chemical bond with the surface of the quantum dots.4. The electroluminescent device of claim 3 , wherein the first terminal end comprises carboxylate claim 3 , phosphoryl claim 3 , or a combination thereof.7. The electroluminescent device of claim 1 , wherein the self-assembled monomolecules are dissolved in a solvent comprising water claim 1 , ethanol claim 1 , methanol claim 1 , propanol claim 1 , butanol claim 1 , acetic acid claim 1 , ethylene glycol claim 1 , diethylene glycol claim 1 , glycerine claim 1 , isopropyl alcohol claim 1 , 2-methoxy ethanol claim 1 , acetone claim 1 , acetonitrile claim 1 , or a combination thereof.8. The electroluminescent device of claim 1 , wherein the self-assembled monomolecular layer has an average thickness of about 0.1 nanometers to about 5 ...

Подробнее
Номер записи: 78
04-03-2021 дата публикации

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20210066634A1
Автор: JANG Eun Joo, KIM Chan Su, KIM Kwanghee, PARK Kun Su
Принадлежит:

A light emitting device includes an emission layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the emission layer, the electron auxiliary layer to transport electrons to the emission layer, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles, wherein the metal oxide nanoparticles include zinc and a dopant metal, wherein the dopant metal includes Mg, Mn, Ni, Sn, Al, Y, Ga, Zr, Ni, Li, Co, or a combination thereof, wherein the dopant metal in at least one of the metal oxide nanoparticles is included in the meal oxide nanoparticle to have a concentration gradient of the dopant metal. 1. A light emitting device , comprisingan emission layer comprising a plurality of quantum dots, andan electron auxiliary layer disposed on the emission layer, the electron auxiliary layer to transport or inject electrons to the emission layer,wherein the electron auxiliary layer comprises a plurality of metal oxide nanoparticles,wherein the metal oxide nanoparticles include zinc and a dopant metal, wherein the dopant metal comprises Mg, Mn, Ni, Sn, Al, Y, Ga, Zr, Li, Co, or a combination thereof, andwherein the dopant metal in at least one of the metal oxide nanoparticles is included in the meal oxide nanoparticle to have a concentration gradient of the dopant metal.2. The light emitting device of claim 1 , wherein in at least one of the metal oxide nanoparticles claim 1 , a concentration of the dopant metal increases in a direction from an inner portion to an outer portion of the nanoparticle claim 1 , or increases in a direction from the outer portion to the inner portion of the nanoparticle.3. The light emitting device of claim 1 , wherein the quantum dots do not comprise cadmium claim 1 , lead claim 1 , or a combination thereof.4. The light emitting device of claim 1 , wherein the plurality of quantum dot comprises a Group II-VI compound claim 1 , a Group III-V compound claim 1 , a Group IV-VI compound claim 1 , ...

Подробнее
Номер записи: 79
17-03-2022 дата публикации

SEMICONDUCTOR NANOCRYSTAL PARTICLES, PRODUCTION METHODS THEREOF, AND DEVICES INCLUDING THE SAME

Номер: US20220081614A1
Автор: JANG Eun Joo, KANG Hyun A, KIM Jin A, KIM Sung Woo, Kim Tae Hyung, LEE Jeong Hee, WON Yuho
Принадлежит:

A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: 120-. (canceled)21. Quantum dots , each comprising:a core comprising zinc, tellurium, and selenium; anda shell disposed on at least a portion of the core and comprising zinc; and selenium and optionally sulfur,wherein the quantum dots do not comprise cadmium,wherein the quantum dots comprise a mole ratio of tellurium with respect to selenium of greater than or equal to about 0.001.wherein in the quantum dots, a mole amount of selenium is greater than a mole amount of tellurium,wherein a maximum luminescent emission peak of the quantum dots is in a wavelength range from about 440 nanometers to about 560 nanometers,wherein a quantum efficiency of the quantum dots is greater than or equal to about 60% and less than or equal to 100%, andwherein a full width at half maximum of the quantum dots is less than or equal to about 45 nm.22. The quantum dots of claim 21 , wherein the maximum luminescent emission peak of the quantum dots is in a wavelength range from about 455 nanometers to about 530 nanometers.23. The quantum dots of claim 21 , wherein the maximum luminescent emission peak of the quantum dots is in a wavelength range of greater than or equal to about 450 nanometers and less than or equal to about 470 nanometers claim 21 , andwherein the quantum dots comprise a mole ratio of tellurium with respect to selenium of greater than or equal to about 0.001 and less than about 0.03.24. The quantum dots of claim 21 , wherein the maximum luminescent emission peak of the quantum dots is in a wavelength range from about 500 nanometers to about 540 nanometers.25. The quantum dots of claim 21 , wherein the shell comprises zinc claim 21 , selenium claim 21 , and sulfur.26. The quantum dots of claim 21 , ...

Подробнее
Номер записи: 80
12-03-2015 дата публикации

LIGHT SOURCE UNIT USING QUANTUM DOT PACKAGE AND DISPLAY HAVING THE SAME

Номер: US20150070932A1
Автор: BAE Min Jong, JANG Eun Joo, KIM Dong Earn, LEE Jeong Hee, LEE Sang Eui
Принадлежит:

A light source unit includes: a light guiding plate having a front surface and a rear surface facing each other, and a side surface between the front surface and the rear surface; a light guiding bar disposed on the side surface of the light guiding plate; a quantum dot package disposed on a surface of the light guiding bar; and a dot light source which provides light to the quantum dot package. 1. A light source unit comprising:a light guiding plate having a front surface and a rear surface facing each other and a side surface between the front surface and the rear surface;a light guiding bar disposed on the side surface of the light guiding plate;a quantum dot package disposed on a surface of the light guiding bar; anda dot light source which provides light to the quantum dot package.2. The light source unit of claim 1 , whereinthe light guiding bar has a wedge shape, andthe quantum dot package and the dot light source are disposed on a surface corresponding to a wedge head of the light guiding bar.3. The light source unit of claim 2 , whereinthe light guiding bar comprises first and second light guiding bars disposed in symmetry with respect to the light guiding plate,the quantum dot package comprises first and second quantum dot packages disposed on surfaces corresponding to wedge heads of the first and second light guiding bars, respectively, andthe dot light source comprises first and second dot light sources disposed on the surfaces corresponding to the wedge heads in the first and second light guiding bars, respectively.4. The light source unit of claim 2 , whereineach of the front surface and the rear surface of the light guiding plate is in a rectangular shape, a pair of long side surfaces facing each other; and', 'a pair of short side surfaces facing each other,, 'the side surface of the light guiding plate comprises a first light guiding bar disposed on one of the short side surfaces of the light guiding plate; and', 'a second light guiding bar disposed ...

Подробнее
Номер записи: 81
27-02-2020 дата публикации

QUANTUM DOT DEVICE AND QUANTUM DOTS

Номер: US20200063032A1
Автор: JANG Eun Joo, KIM Jin A, KIM Sung Woo, Kim Tae Hyung, LEE Jeong Hee, WON Yuho
Принадлежит:

Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm. 1. A electroluminescent device , comprisinga first electrode and a second electrode facing each other,an emission layer disposed between the first electrode and the second electrode, the emission layer comprising quantum dots, and a core comprising a first semiconductor nanocrystal comprising a zinc chalcogenide, and', 'a shell disposed on the core, the shell comprising zinc, sulfur, and selenium,, 'wherein the quantum dots comprise'}wherein the quantum dots have an average particle size of greater than 10 nanometers,wherein the quantum dots do not comprise cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nanometers and less than or equal to about 470 nanometers.2. The electroluminescent device of claim 1 , wherein the zinc chalcogenide comprises zinc claim 1 , selenium claim 1 , and optionally tellurium.3. The electroluminescent device of claim 1 , wherein the core does not comprise manganese claim 1 , copper claim 1 , or a combination thereof.4. The electroluminescent device of claim 1 , wherein the zinc chalcogenide comprises zinc claim 1 , selenium claim 1 , and tellurium claim 1 , andwherein the quantum dots have a mole ratio of tellurium with respect to selenium of greater than or equal to about 0.001:1 and less than or equal to about 0.05:1.5. The electroluminescent device of claim 1 , wherein the core comprises ZnSeTe claim 1 ...

Подробнее
Номер записи: 82
10-03-2016 дата публикации

PHOTOLUMINESCENT LIQUID CRYSTAL DISPLAY

Номер: US20160070136A1
Автор: JANG Eun Joo, JUN Shin Ae, KANG Hyun A
Принадлежит:

A photoluminescent liquid crystal display includes: a liquid crystal panel including a lower substrate, an upper substrate, a liquid crystal layer interposed between the upper and lower substrates, and a photoluminescent color filter layer disposed between the upper substrate and the liquid crystal layer; an optical device disposed on the upper substrate; a polarizing plate disposed under the lower substrate; and a backlight unit disposed under the polarizing plate and which emits blue light, where the photoluminescent color filter layer includes a first color filter which emits polarized red light, a second color filter which emits polarized green light, and a third color filter which emits polarized blue light, and the first color filter and the second color filter include a semiconductor nanocrystal-polymer composite. 1. A photoluminescent liquid crystal display , comprising: a lower substrate;', 'an upper substrate disposed opposite to the lower substrate;', 'a liquid crystal layer interposed between the upper and lower substrates; and', 'a photoluminescent color filter layer disposed between the upper substrate and the liquid crystal layer;, 'a liquid crystal panel comprisinga polarizing plate disposed under the lower substrate; anda backlight unit disposed under the polarizing plate and which emits blue light, a first color filter which emits polarized red light based on the blue light,', 'a second color filter which emits polarized green light based on the blue light, and', 'a third color filter which emits polarized blue light based on the blue light, and, 'wherein the photoluminescent color filter layer compriseseach of the first color filter and the second color filter comprise a semiconductor nanocrystal-polymer composite.2. The photoluminescent liquid crystal display of claim 1 , further comprising:an optical device disposed on the upper substrate.3. The photoluminescent liquid crystal display of claim 1 , whereinthe optical device maintains polarization ...

Подробнее
Номер записи: 83
27-02-2020 дата публикации

ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THEREOF

Номер: US20200067005A1
Автор: JANG Eun Joo, KIM Kwanghee, Kim Tae Ho, PARK Kun Su, YOON Won Sik
Принадлежит:

An electroluminescent device, a method of manufacturing the same, and a display device including the same. 1. An electroluminescent device , comprisinga first electrode;a hole transport layer disposed on the first electrode;an emission layer disposed on the hole transport layer and comprising light emitting particles;an electron transport layer disposed on the emission layer and comprising nanoparticles having electron transport capability; anda second electrode disposed on the electron transport layer,wherein at least a portion of the nanoparticles having electron transport capability comprisean inorganic oxide core represented by Chemical Formula 1,an organic ligand attached to a surface of the inorganic oxide core, and {'br': None, 'sub': x', 'y, 'MO\u2003\u2003Chemical Formula 1'}, 'a metal-organic compound chemically bound to the surface of the inorganic oxide corewherein, in Chemical Formula 1,M is Zn, Ti, Zr, Sn, W, or Ta, andx and y are independently an integer ranging from 1 to 5.2. The electroluminescent device of claim 1 , wherein a difference between lowest unoccupied molecular orbital energy levels of the emission layer and the electron transport layer is greater than a difference between lowest unoccupied molecular orbital energy levels of the emission layer and ZnO.3. The electroluminescent device of claim 2 , wherein a lowest unoccupied molecular orbital energy level of the electron transport layer is greater than about 4.36 electronvolts and less than or equal to about 5.0 electronvolts.4. The electroluminescent device of claim 1 , wherein the metal-organic compound comprises Zn claim 1 , Mg claim 1 , Al claim 1 , In claim 1 , Ga claim 1 , or a combination thereof.5. The electroluminescent device of claim 4 , wherein the metal of the metal-organic compound is chemically bound to the surface of the inorganic oxide core.6. The electroluminescent device of claim 1 , wherein the organic ligand claim 1 , the metal-organic compound claim 1 , or a ...

Подробнее
Номер записи: 84
24-03-2022 дата публикации

SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME

Номер: US20220089950A1
Автор: JANG Eun Joo, KIM Jin A, KIM Sung Woo, Kim Tae Hyung, LEE Jeong Hee
Принадлежит:

A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium. 1. An electroluminescent device , comprising:an anode;a cathode; anda quantum dot emission layer comprising a plurality of quantum dots, each quantum dot of the plurality of quantum dots comprising:a core, comprising a first semiconductor nanocrystal comprising zinc, selenium, and tellurium; anda shell, comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and wherein the second semiconductor nanocrystal comprises zinc and at least one of sulfur and selenium, wherein the shell is disposed on the core,wherein the plurality of quantum dots are configured to emit blue light comprising a maximum emission peak in a wavelength region of greater than or equal to about 440 nanometers and less than or equal to about 470 nanometers,wherein a full width at half maximum (FWHM) of the maximum emission peak is from 10 nanometers to about 30 nanometers, andwherein the plurality of quantum dots do not comprise cadmium.2. The electroluminescent device of claim 1 , wherein the plurality of quantum dots comprises a mole ratio of tellurium to selenium of greater than or equal to about 0.0001 and less than or equal to about 0.05.3. The electroluminescent device ...

Подробнее
Номер записи: 85
05-03-2020 дата публикации

ELECTRONIC DEVICE INCLUDING QUANTUM DOTS

Номер: US20200071612A1
Автор: Chang Jaejun, CHUNG Dae Young, JANG Eun Joo, KWON Ha Il, WON Yuho
Принадлежит:

An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m). 1. An electroluminescent device , comprisinga first electrode and a second electrode facing each other,an emissive layer disposed between the first electrode and the second electrode, the emissive layer comprising quantum dots, and a semiconductor nanocrystal core comprising indium and phosphorous,', 'a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc and selenium, and', 'a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur,, 'wherein the quantum dots comprise'}wherein the quantum dots do not comprise cadmium,{'sup': '2', 'wherein the electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m).'}2. The electroluminescent device of claim 1 , wherein a wavelength of a maximum photoluminescent peak of the quantum dots is present in a range of greater ...

Подробнее
Номер записи: 86
26-03-2015 дата публикации

Nanocrystal particles and processes for synthesizing the same

Номер: US20150083969A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KIM HYUNKI, KIM Tae Gon, KIM Taekhoon, KIM Yongwook, WON Yuho
Принадлежит:

A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide 1. A nanocrystal particle comprising at least one semiconductor material and at least one halogen element ,wherein the nanocrystal particle has a core-shell structure including a core comprising a first semiconductor nanocrystal; anda shell surrounding the core and comprising a crystalline or amorphous material, andwherein the at least one halogen element is present as being doped therein or as a metal halide.2. The nanocrystal particle of claim 1 , wherein the at least one halogen element comprises fluorine.3. The nanocrystal particle of claim 1 , wherein the first semiconductor nanocrystal of the core comprises a metal selected from a Group II metal claim 1 , a Group III metal claim 1 , a Group IV metal claim 1 , and a combination thereof claim 1 , andwherein the crystalline or amorphous material of the shell comprises at least one metal which is different from the metal included in the first semiconductor nanocrystal and which is selected from a Group I metal, a Group II metal, a Group III metal, a Group IV metal, and a combination thereof.4. The nanocrystal particle of claim 1 , wherein the halogen element is included in a region selected the core claim 1 , the shell claim 1 , an interface between the core and the shell claim 1 , and a combination thereof.5. The nanocrystal particle of claim 4 , wherein the shell is a multi-layered shell comprising an inner shell claim 4 , an outer shell on the inner shell claim 4 , a first interface between the core and the inner shell claim 4 , and a second interface between the inner shell and the outer shell claim 4 , each comprising a composition different from one ...

Подробнее
Номер записи: 87
26-03-2015 дата публикации

QUANTUM DOT-RESIN NANOCOMPOSITE AND METHOD OF PREPARING SAME

Номер: US20150083970A1
Автор: JANG Eun Joo, KANG Hyun A, KOH Haeng Deog, Won Na Youn
Принадлежит:

A quantum dot-resin nanocomposite including a nanoparticle including a curable resin and a plurality of quantum dots contacting the nanoparticle. Also, a method of preparing the nanocomposite, and a molded article including the nanocomposite. 1. A quantum dot-resin nanocomposite , comprising:a curable resin nanoparticle; anda plurality of quantum dots contacting the nanoparticle.2. The quantum dot-resin nanocomposite of claim 1 , wherein at least one quantum dot of the plurality of quantum dots is encapsulated in the curable resin nanoparticle.3. The quantum dot-resin nanocomposite of claim 1 , wherein the plurality of quantum dots are disposed on a surface of the curable resin nanoparticle.4. The quantum dot-resin nanocomposite of claim 1 , wherein the plurality of quantum dots are uniformly dispersed in the curable resin nanoparticle.5. The quantum dot-resin nanocomposite of claim 1 , wherein the quantum dots are functionalized with an organic material derived from a compound of the formula RCOOH claim 1 , RNH claim 1 , RNH claim 1 , RN claim 1 , RSH claim 1 , RPO claim 1 , RP claim 1 , ROH claim 1 , RCOOR′ claim 1 , or a combination thereof claim 1 , wherein R and R′ are each independently a C1-C24 alkyl group or a C5-C24 aryl group claim 1 , and wherein the organic material is disposed on a surface of the quantum dots.6. The quantum dot-resin nanocomposite of claim 5 , wherein the organic material is a material derived from a thiol claim 5 , an amine claim 5 , an acid claim 5 , a phosphine claim 5 , or phosphonic acid.7. The quantum dot-resin nanocomposite of claim 6 ,wherein the thiol is methane thiol, ethane thiol, propane thiol, butane thiol, pentane thiol, hexane thiol, octane thiol, dodecane thiol, hexadecane thiol, octadecane thiol, or benzyl thiol;wherein the amine is methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, octylamine, dodecylamine, hexadecyl amine, octadecyl amine, dimethyl amine, diethyl amine, or dipropyl amine; ...

Подробнее
Номер записи: 88
12-06-2014 дата публикации

Processes for synthesizing nanocrystals and nanocrystal compositions

Номер: US20140158937A1
Автор: Eun Joo Jang, Hyo Sook JANG, Won Joo LEE
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A process of synthesizing nanocrystals, the process including contacting a first precursor, a ligand compound, and a second precursor in a solvent having a boiling point of less than or equal to about 150° C. and a polarity index of less than or equal to 5, and performing a thermal decomposition reaction between the first precursor and the second precursor at a higher pressure than atmospheric pressure and at a higher temperature than a boiling point of the solvent, wherein at least one of the first precursor and the second precursor is a metal-containing precursor.

Подробнее
Номер записи: 89
12-06-2014 дата публикации

Quantum dot phosphor for light emitting diode and method of preparing the same

Номер: US20140158938A1
Автор: Eun Joo Jang, Hyung Kun Kim, Mi Yang KIM, Seong Jae CHOI, Shin Ae Jun, Yong Wan Jin
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Подробнее
Номер записи: 90
12-06-2014 дата публикации

Quantum dot phosphor for light emitting diode and method of preparing the same

Номер: US20140158979A1
Автор: Eun Joo Jang, Hyung Kun Kim, Mi Yang KIM, Seong Jae CHOI, Shin Ae Jun, Yong Wan Jin
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Подробнее
Номер записи: 91
23-03-2017 дата публикации

FILM FOR BACKLIGHT UNIT AND BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING SAME

Номер: US20170082879A1
Автор: CHO Oul, HAN In Taek, JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, JUNG Chul Ho, KANG Hyun A, KWON Soo Kyung, LEE Won Joo
Принадлежит:

A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: 1. A semiconductor nanocrystal-polymer composite , comprisinga semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed,wherein the matrix polymer comprises a polymerization product of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent,{'sub': 1', '2', '3, 'claim-text': {'br': None, 'i': A', 'A', '+A, 'sub': 1', '2', '3, '<().\u2003\u2003Equation 1'}, 'a content by weight (A) of a first structural unit derived from the multifunctional photo-curable oligomer, a content by weight (A) of a second structural unit derived from the mono-functional photo-curable monomer, and a content by weight (A) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 12. The semiconductor nanocrystal-polymer composite of claim 1 , wherein a weight ratio of the content (A) of the first structural unit derived from the multifunctional photo-curable oligomer to the sum of the content)(A) of the second structural unit derived from the mono-functional photo-curable monomer ...

Подробнее
Номер записи: 92
23-03-2017 дата публикации

LED PACKAGE, BACKLIGHT UNIT AND ILLUMINATION DEVICE INCLUDING SAME, AND LIQUID CRYSTAL DISPLAY INCLUDING BACKLIGHT UNIT

Номер: US20170082896A1
Автор: CHO Oul, JANG Eun Joo, JUN Shin Ae, KANG Hyun A
Принадлежит:

A light emitting diode (LED) package includes: an LED; a stack structure including a light-scattering structure spaced apart from the LED, and a light conversion layer disposed on at least one surface selected from an inner surface and an outer surface of the light-scattering structure and configured to convert light emitted from the LED into white light, wherein the light conversion layer includes a semiconductor nanocrystal; and an organic barrier layer disposed on a surface of the light conversion layer. 1. An light emitting diode package comprising:a light emitting diode; a light-scattering structure spaced apart from the light emitting diode, and', 'a light conversion layer disposed on at least one surface selected from an inner surface and an outer surface of the light-scattering structure and configured to convert light emitted from the light emitting diode into white light, wherein the light conversion layer comprises a semiconductor nanocrystal; and, 'a stack structure comprising,'}an organic barrier layer disposed on a surface of the light conversion layer.2. The light emitting diode package of claim 1 , wherein the light emitting diode is a blue light source or an ultraviolet light source.3. The light emitting diode package of claim 1 , wherein the light-scattering structure has a structure in a shape of a lens.4. The light emitting diode package of claim 3 , wherein the structure has a concave lens shape or a convex lens shape.5. The light emitting diode package of claim 1 , wherein the light-scattering structure comprises glass or a polymer selected from polymethyl(meth)acrylate claim 1 , polycarbonate claim 1 , polyvinyl alcohol claim 1 , an epoxy-containing polymer claim 1 , a silicone polymer claim 1 , and a combination thereof.6. The light emitting diode package of claim 1 , wherein the light-scattering structure has transmittance of greater than or equal to about 80%.7. The light emitting diode package of claim 1 , wherein the light-scattering ...

Подробнее
Номер записи: 93
12-03-2020 дата публикации

Electroluminescent device, and display device comprising thereof

Номер: US20200083450A1
Автор: Chan Su Kim, Dae Young Chung, Eun Joo Jang, Kun Su PARK, Kwanghee Kim, Moon Gyu Han, Won Sik Yoon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Подробнее
Номер записи: 94
12-03-2020 дата публикации

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20200083470A1
Автор: CHO Oul, CHUNG Dae Young, JANG Eun Joo, KIM Kwanghee, Kim Tae Hyung, LEE Hee Jae, SEO Hongkyu, WON Yuho
Принадлежит:

A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface. 1. A light emitting device , comprisinga first electrode and a second electrode facing each other,an emission layer disposed between the first electrode and the second electrode, the emission layer comprising quantum dots, anda charge auxiliary layer disposed between the emission layer and the second electrode,wherein the emission layer comprises a first surface facing the charge auxiliary layer and an opposite second surface,the quantum dots comprise a first organic ligand on a surface of the quantum dots, andin the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.2. The light emitting device of claim 1 , wherein the amount of the first organic ligand in the portion adjacent to the first surface is at least about 20% larger than the amount of the first organic ligand in the portion adjacent to the second surface.3. The light emitting device of claim 1 , wherein the charge auxiliary layer is an electron auxiliary layer comprising nanoparticles comprising zinc metal oxide.4. The light emitting device of claim 3 ...

Подробнее
Номер записи: 95
30-03-2017 дата публикации

SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME

Номер: US20170088775A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KIM Taekhoon, KIM Yongwook, MIN Jihyun, PARK Garam, WON Yuho
Принадлежит:

A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material. 1. A semiconductor nanocrystal particle comprising:a core comprising a first semiconductor material; anda shell disposed on the core,wherein the shell comprises a second semiconductor material,wherein the shell is free of cadmium,wherein the shell comprises at least two branches and at least one valley portion connecting the at least two branches, andwherein the first semiconductor material is different from the second semiconductor material.2. The semiconductor nanocrystal particle of claim 1 , wherein the shell surrounds the entire surface of the core.3. The semiconductor nanocrystal particle of claim 1 , wherein the shell comprises at least three branches.4. The semiconductor nanocrystal particle of claim 1 , wherein a thickness of the shell is greater than or equal to about 1 nanometer.5. The semiconductor nanocrystal particle of claim 1 , wherein in the semiconductor nanocrystal particle claim 1 , a depth of the at least one valley portion is greater than about 0.6. The semiconductor nanocrystal particle of claim 1 , wherein a composition of the branch is a function of its length.7. The semiconductor nanocrystal particle of claim 1 , wherein the core and the shell have the same crystal structure at the interface therebetween.8. The semiconductor nanocrystal particle of claim 7 , wherein the crystal structure is a zinc blend or wurtzeit.9. The semiconductor nanocrystal particle of claim 1 ,wherein the first semiconductor material comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element ...

Подробнее
Номер записи: 96
25-03-2021 дата публикации

LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE

Номер: US20210091325A1
Автор: CHUNG Dae Young, JANG Eun Joo, KIM Chan Su, Kim Tae Ho, PARK Kun Su
Принадлежит:

A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same. 1. A light emitting device comprisinga first electrode,a second electrode,a quantum dot layer disposed between the first electrode and the second electrode, anda first auxiliary layer disposed between the quantum dot layer and the first electrodewherein the first auxiliary layer comprises nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers and an organic ligand.2. The light emitting device of claim 1 , wherein the average particle diameter of the nickel oxide nanoparticles is less than about 5 nanometers.3. The light emitting device of claim 1 , wherein about 90% or greater of a total number of the nickel oxide nanoparticles in the first auxiliary layer have a particle size within ±about 30% of the average particle diameter of the nickel oxide nanoparticles.4. The light emitting device of claim 1 , wherein the nickel oxide nanoparticles comprise a metal dopant other than nickel.5. The light emitting device of claim 4 , wherein the metal dopant comprises copper claim 4 , aluminum claim 4 , molybdenum claim 4 , vanadium claim 4 , iron claim 4 , lithium claim 4 , manganese claim 4 , silver claim 4 , cobalt claim 4 , zirconium claim 4 , chromium claim 4 , zinc claim 4 , or a combination thereof.6. The light emitting device of claim 4 , wherein the metal dopant is present in an amount of less than or equal to about 20 weight percent claim 4 , based on a total weight of the nickel oxide nanoparticles.7. The ...

Подробнее
Номер записи: 97
25-03-2021 дата публикации

ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING SAME

Номер: US20210091327A1
Автор: Han Moon Gyu, JANG Eun Joo, Kim Tae Ho, LEE Heejae, SEO Hongkyu
Принадлежит:

An electroluminescent device and a display device including the same are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; a light emitting layer including a first light emitting layer disposed on the hole transport layer, the first emitting layer including a first quantum dot, and a second light emitting layer including a second quantum dot and an n-type organic semiconductor, the second light emitting layer disposed on the first light emitting layer; an electron transport layer disposed on the second light emitting layer; and a second electrode disposed on the electron transport layer. 1. An electroluminescent device , comprisinga first electrode;a hole transport layer disposed on the first electrode;a light emitting layer comprising a first light emitting layer disposed on the hole transport layer, the first light emitting layer comprising a first quantum dot, and a second light emitting layer comprising a second quantum dot and an n-type organic semiconductor, the second light emitting layer disposed on the first light emitting layer;an electron transport layer disposed on the second light emitting layer; anda second electrode disposed on the electron transport layer.2. The electroluminescent device of claim 1 , wherein a highest occupied molecular orbital energy level of the n-type organic semiconductor is less than or equal to about −7.0 eV.3. The electroluminescent device of claim 1 , wherein the n-type organic semiconductor comprises an n-type monomolecular organic semiconductor claim 1 , an n-type polymer organic semiconductor claim 1 , or a combination thereof.4. The electroluminescent device of claim 3 , wherein the n-type monomolecular organic semiconductor comprises 1 claim 3 ,3 claim 3 ,5-tri(diphenylphosphoryl-phen-3-yl) benzene claim 3 , 1 claim 3 ,3 claim 3 ,5-triazine-2 claim 3 ,4 claim 3 ,6-triyl)tris(benzene-3 claim 3 ,1-diyl)tris(diphenylphosphine oxide) claim 3 , ...

Подробнее
Номер записи: 98
05-05-2022 дата публикации

LIGHT SOURCE, AND BACK LIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE LIGHT SOURCE

Номер: US20220137286A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KANG Hyun A, Kim Tae Hyung, KIM Yongwook, Won Na Youn
Принадлежит:

A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65 Подробнее

Номер записи: 99
05-05-2022 дата публикации

LIGHT EMITTING DEVICE, PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20220140272A1
Автор: JANG Eun Joo, JANG Hyo Sook, Kim Tae Ho, LEE Ilyoung, PARK Kun Su, YOO Jun-mo
Принадлежит:

A light emitting device and a production method thereof. The light emitting device includes a light emitting layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex. The metal oxide nanoparticles include zinc and optionally a dopant metal, the dopant metal includes Mg, Co, Ga, Ca, Zr, W, Li, Ti, Y, Al, Co, or a combination thereof and a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1.

Подробнее
Номер записи: 100
09-04-2015 дата публикации

NANOCRYSTAL POLYMER COMPOSITES AND PRODUCTION METHODS THEREOF

Номер: US20150098212A1
Автор: CHO Oul, JANG Eun Joo, JUN Shin Ae, KANG Hyun A, Won Na Youn
Принадлежит:

A semiconductor nanocrystal composition including a semiconductor nanocrystal, an organic additive, and at least one polymerizable substance selected from a polymerizable monomer, a polymerizable oligomer, and a combination thereof, wherein the composition has haze of greater than or equal to about 40% after polymerization. 1. A semiconductor nanocrystal composition comprising:a semiconductor nanocrystal,an organic additive, andat least one polymerizable substance selected from a polymerizable monomer, a polymerizable oligomer, and a combination thereof, andwherein the composition has a haze of greater than or equal to about 40% after polymerization.2. The semiconductor nanocrystal composition of claim 1 , wherein the polymerizable substance comprises a polymerizable monomer and a polymerizable oligomer.3. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal comprises a Group II-VI compound claim 1 , a Group III-V compound claim 1 , a Group IV-VI compound claim 1 , a Group IV element or compound claim 1 , or a combination thereof.4. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal has a core-shell structure.5. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal has a photoluminescence quantum yield of greater than or equal to about 50%.6. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal has a full width at half maximum of less than or equal to about 45 nanometers.7. The semiconductor nanocrystal composition of claim 1 , wherein the semiconductor nanocrystal comprises a surface organic compound claim 1 ,wherein an amount of the organic compound is less than or equal to about 35% by weight based on the total weight of the semiconductor nanocrystal, andwherein the surface organic compound comprises a ligand compound, a solvent, or a combination thereof.8. The semiconductor nanocrystal composition of ...

Подробнее
Номер записи: 101
05-04-2018 дата публикации

NANOCRYSTAL PARTICLES AND PROCESSES FOR SYNTHESIZING THE SAME

Номер: US20180094190A1
Автор: JANG Eun Joo, JANG Hyo Sook, JUN Shin Ae, KIM HYUNKI, KIM Tae Gon, KIM Taekhoon, KIM Yongwook, WON Yuho
Принадлежит:

A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide 1. A nanocrystal particle comprising at least one semiconductor material and at least one halogen element ,wherein the nanocrystal particle has a core-shell structure including a core comprising a first semiconductor nanocrystal; anda shell surrounding the core and comprising a crystalline or amorphous semiconductor material, andwherein the at least one halogen element is present as being doped therein or as a metal halide,wherein the at least one halogen element comprises fluorine,wherein the fluorine is included in an interface between the core and the shell, in the shell, or in the interface between the core and the shell and in the shell,wherein the first semiconductor nanocrystal of the core or the crystalline semiconductor material of the shell comprises a Group II-VI compound, a Group III-V compound, or a combination thereof,wherein the nanocrystal particle has a quantum yield of greater than or equal to about 50%,wherein the crystalline or amorphous semiconductor material of the shell comprises a composition different from that of the first semiconductor nanocrystal of the core, andwherein the nanocrystal particle does not include cadmium.2. The nanocrystal particle of claim 1 , wherein the fluorine is present at an interface of the core and the shell claim 1 , and in the shell.3. The nanocrystal particle of claim 1 , wherein the first semiconductor nanocrystal of the core claim 1 , the crystalline semiconductor material of the shell claim 1 , or both comprises zinc.4. The nanocrystal particle of claim 3 , wherein the first semiconductor nanocrystal of the core comprises ZnSe claim 3 , ZnS claim 3 , or a ...

Подробнее
Номер записи: 102
01-04-2021 дата публикации

ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THEREOF

Номер: US20210098728A1
Автор: CHUNG Dae Young, JANG Eun Joo, KIM Hwea Yoon, LEE Yeonkyung
Принадлежит:

An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material. 1. An electroluminescent device comprisinga first electrode and a second electrode facing each other;a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer comprising a quantum dot;a hole transport layer disposed between the light emitting layer and the first electrode; andan electron transport layer disposed between the light emitting layer and the second electrode,wherein the hole transport layer, the light emitting layer, or a combination thereof comprises a thermally activated delayed fluorescence material, andthe thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 weight percent and less than about 10 weight percent, based on 100 weight percent of the hole transport layer, the light emitting layer, or the combination thereof comprising the thermally activated delayed fluorescence material.2. The electroluminescent device of claim 1 , whereinthe hole transport layer comprises the thermally ...

Подробнее
Номер записи: 103
12-05-2022 дата публикации

LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME

Номер: US20220149307A1
Автор: CHO Oul, JANG Eun Joo, KIM Kwanghee, Kim Tae Hyung, Lee Jaeyong, SEO Hongkyu, YOON Won Sik
Принадлежит:

A light emitting device including a first electrode and a second electrode each having a surface opposite the other, a light emitting layer disposed between the first electrode and the second electrode, and an electronic auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles and an orthosilicate compound. 1. A light emitting device , comprisinga first electrode and a second electrode each having a surface opposite the other,a light emitting layer disposed between the first electrode and the second electrode, andan electronic auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer comprises metal oxide nanoparticles and an orthosilicate compound.2. The light emitting device of claim 1 , wherein at least a portion of the orthosilicate compound is bound to a surface of the metal oxide nanoparticles.3. The light emitting device of claim 1 , wherein the metal oxide nanoparticles comprise a coating layer on a surface of the metal oxide nanoparticles claim 1 , the coating layer including at least a portion of the orthosilicate compound.5. The light emitting device of claim 1 , wherein the orthosilicate compound comprises tetramethylorthosilicate claim 1 , tetraethylorthosilicate claim 1 , tetrapropylorthosilicate claim 1 , tetrabutylorthosilicate claim 1 , or a combination thereof.6. The light emitting device of claim 1 , wherein the orthosilicate compound is present in an amount of about 5 parts by weight to about 500 parts by weight claim 1 , based on 100 parts by weight of the metal oxide nanoparticles.7. The light emitting device of claim 1 , wherein the electron auxiliary layer further comprises a first silane compound represented by Chemical Formula 2:{'br': None, 'sup': 21', '22, 'sub': p', '4-p, '(R)—Si—(R)\u2003\u2003Chemical Formula 2'}wherein, in Chemical Formula 2,{'sup': '21', 'Ris a substituted ...

Подробнее
Номер записи: 104
12-05-2022 дата публикации

Light emitting device, method for manufacturing the same, and electronic device including the same

Номер: US20220149311A1
Автор: Eun Joo Jang, Hongkyu SEO, Hyo Sook JANG, Oul CHO, Tae Hyung Kim, Won Sik Yoon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of manufacturing a light emitting device that includes providing a first electrode, forming a light emitting layer including quantum dots on the first electrode, forming an electron auxiliary layer on the light emitting layer, and forming a second electrode on the electronic auxiliary layer. The forming of the electron auxiliary layer includes forming an electron auxiliary layer including a plurality of metal oxide nanoparticles, and contacting the plurality of metal oxide nanoparticles with a base including a hydroxyl group (OH).

Подробнее
Номер записи: 105
08-04-2021 дата публикации

QUANTUM DOTS, AND AN ELECTRONIC DEVICE INCLUDING THE SAME

Номер: US20210102119A1
Автор: CHO Oul, CHUNG Heejae, JANG Eun Joo, Kim Tae Hyung, WON Yuho
Принадлежит:

A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm). 1. A quantum dot comprisinga core comprising a first semiconductor nanocrystal comprising a Group III-V compound, anda shell disposed on the core, the shell comprising a semiconductor nanocrystal comprising a Group II-VI compound,wherein the quantum dot does not comprise cadmium, a first layer disposed directly on the core, the first layer comprising a second semiconductor nanocrystal comprising zinc and selenium,', 'a second layer, the second layer being an outermost layer of the shell, the second layer comprising a third semiconductor nanocrystal comprising zinc and sulfur and', 'a third layer disposed between the first layer and the second layer, the third layer comprising a fourth semiconductor nanocrystal comprising zinc, selenium, and optionally sulfur, and, 'the shell comprises'}a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers.2. The quantum dot of claim 1 , wherein a ...

Подробнее
Номер записи: 106
02-06-2022 дата публикации

QUANTUM DOTS AND QUANTUM DOT SOLUTIONS

Номер: US20220169921A1
Автор: CHUNG Dae Young, JANG Eun Joo, KIM Kwanghee, Kim Tae Hyung, PARK Sujin
Принадлежит:

Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions. 116.-. (canceled)17. A light emitting device comprisinga first electrode and a second electrode facing each other, andan emission layer disposed between the first electrode and the second electrode,wherein the emission layer comprises quantum dots, an organic ligand, and a halogen, andwherein an amount of the halogen is greater than or equal to about 1 microgram per milligram of the quantum dots and less than about 30 micrograms per milligram of the quantum dots.1820.-. (canceled)21. The light emitting device of claim 17 , wherein an amount of the organic ligand is less than or equal to about 10 weight percent based on a total weight of the quantum dots.22. The light emitting device of claim 17 , wherein the halogen comprises Cl.23. The light emitting device of claim 17 , wherein the halogen is bounded to a surface of the quantum dots.24. The light emitting device of claim 23 , wherein the halogen bound to the quantum dots results from a surface exchange reaction with a metal halide.25. The light emitting device of claim 24 , wherein the metal halide comprises a zinc chloride.26. The light emitting device of claim 17 , wherein the amount of the halogen is greater than or equal to about 1.5 microgram per milligram of the quantum dots and less than about 25 micrograms per milligram of the quantum dots.27. The light emitting device of claim 17 , wherein a mole ratio of the halogen relative to the organic ligand is less than about 2.2:1.28. The light emitting device of claim 17 , whereinthe quantum dots comprise a core comprising a first semiconductor nanocrystal and a shell disposed on the ...

Подробнее
Номер записи: 107
08-04-2021 дата публикации

ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THEREOF

Номер: US20210104696A1
Автор: CHUNG Dae Young, HAN Yong Seok, JANG Eun Joo, KIM Jin A., KIM Sung Woo, PARK Sujin, WON Yuho
Принадлежит:

An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, each of the first and second quantum dots has a core-shell structure including one or more shells, and the first and second quantum dots have different numbers of shells from each other or have different total thicknesses of the one or more shells from each other. 1. An electroluminescent device , comprisinga first electrode and a second electrode which face each other;a hole transport layer disposed between the first electrode and the second electrode; a first light emitting layer disposed between the hole transport layer and the second electrode, the first light emitting layer comprising a first quantum dot, and', 'a second light emitting layer disposed between the first light emitting layer and the second electrode, the second light emitting layer comprising a second quantum dot; and, 'a light emitting layer comprisingan electron transport layer disposed between the light emitting layer and the second electrode,wherein each of the first light emitting layer and the second light emitting layer emits first light,each of the first quantum dot and the second quantum dot has a core-shell structure, the core-shell structure includes one or more shells, and the first quantum dot and the second quantum dot have different numbers of shells from each other or have different total thicknesses of the one or more shells from each other.2. The ...

Подробнее
Номер записи: 108
02-06-2022 дата публикации

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20220173342A1
Автор: Chang Jaejun, CHUNG Dae Young, JANG Eun Joo, KIM Kwanghee, Kim Tae Hyung, LEE Heejae, SEO Hongkyu
Принадлежит:

A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer. 1. A light emitting device , comprisinga first electrode and a second electrode facing each other, and an emission layer disposed between the first electrode and the second electrode, and comprising quantum dots,a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode,wherein the emission layer comprises a plurality of layers comprising quantum dots, andthe quantum dots comprise an organic ligand on a surface, and a content of the organic ligand of the quantum dots increases sequentially from a first layer in contact with the first charge auxiliary layer to a second layer in contact with the second charge auxiliary layer.2. The light emitting dev ice of claim 1 , wherein the emission layer comprises a first layer claim 1 , a third layer claim 1 , and a second layer which are continuously disposed claim 1 , and a content of the organic ligand of the quantum dots of the first layer is less than a content of the organic ligand of the quantum dots of the second layer.3. The light emitting device of claim 1 , wherein a content of the organic ligand of the quantum dots of the first layer is less than or equal to about ...

Подробнее
Номер записи: 109
29-04-2021 дата публикации

Electroluminescent device, and display device comprising thereof

Номер: US20210126218A1
Автор: Eun Joo Jang, Kun Su PARK, Moon Gyu Han, Sung Woo Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An electroluminescent device and a display device including the electroluminescent device. The electroluminescent device includes a first electrode and a second electrode each having a surface opposite the other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including quantum dots; and an electron transport layer disposed between the light emitting layer and the second electrode, the electron transport layer including inorganic material nanoparticles including an anion dopant including P, N, C, Cl, F, Br, S, or a combination thereof.

Подробнее
Номер записи: 110
27-04-2017 дата публикации

LIGHT SOURCE, BACK LIGHT UNIT, AND DISPLAY DEVICE

Номер: US20170115529A1
Автор: CHO Oul, JANG Eun Joo, JUN Shin Ae, KANG Hyun A, Kim Tae Hyung, KIM Yongwook, LEE Jeong Hee, MIN Jihyun
Принадлежит:

A light source includes a light emitting element and a light conversion layer configured to convert light emitted from the light emitting element into white light; wherein the light conversion layer includes a matrix resin and a quantum dot, wherein the white light includes a red light component, a green light component, and a blue light component each having a color purity configured to display a color gamut having a concordance rate of greater than or equal to about 99.0% with an Adobe RGB color gamut of a display device, and wherein the green light component has a peak wavelength of about 525 nanometers to about 528 nanometers and a full width at half maximum of less than or equal to about 40 nanometers, and a red light component having a peak wavelength of about 625 nanometers to about 645 nanometers. 1. A light source comprising:a light emitting element and a light conversion layer configured to convert light emitted from the light emitting element into white light,wherein the light conversion layer comprises a matrix resin and a quantum dot,wherein the white light comprises a red light component, a green light component, and a blue light component each having a color purity configured to display a color gamut having a concordance rate of greater than or equal to about 99.0% with an Adobe RGB color gamut of a display device, andwherein the green light component has a peak wavelength of about 525 nanometers to about 528 nanometers and a full width at half maximum of less than or equal to about 40 nanometers, and the red light component has a peak wavelength of about 625 nanometers to about 645 nanometers.2. The light source of claim 1 , wherein the white light includes the green light component having a peak wavelength of about 526 nanometers to about 528 nanometers and a full width at half maximum of less than or equal to about 40 nanometers and the red light component has a peak wavelength of about 635 nanometers to about 645 nanometers claim 1 , andthe red ...

Подробнее
Номер записи: 111
27-04-2017 дата публикации

PHOTOSENSITIVE COMPOSITIONS AND QUANTUM DOT POLYMER COMPOSITE PATTERNS INCLUDING THE SAME

Номер: US20170115561A1
Автор: CHUNG Deukseok, HAN Yong Seok, JANG Eun Joo, JUN Shin Ae, Kim Tae Hyung, PARK Shang Hyeun, YANG Hyeyeon
Принадлежит:

A photosensitive composition and a quantum dot-polymer composite pattern formed from the photosensitive composition are disclosed, and the photosensitive composition includes: 1. A photosensitive composition comprisinga plurality of quantum dots;a color filter material comprising an absorption dye, an absorption pigment, or a combination thereof;a polymer binder;a photopolymerizable monomer comprising a carbon-carbon double bond;a photoinitiator; anda solvent, wherein in a normalized photoluminescence spectrum of the quantum dot and a normalized ultraviolet-visible absorption spectrum of the color filter material, a range of a photoluminescence peak wavelength of the quantum dot and a range of a wavelength of maximum absorbance of the color filter material do not overlap with each other, and the color filter material is included in an amount of less than or equal to 1 part by weight per 10 parts by weight of the plurality of quantum dots.2. The photosensitive composition of claim 1 , wherein in the normalized photoluminescence spectrum of the quantum dot and the normalized ultraviolet-visible absorption spectrum of the color filter material claim 1 , an absorption initiation wavelength of the color filter material is present within or before a longer wavelength tail region of the quantum dot.3. The photosensitive composition of claim 1 , wherein in the normalized photoluminescence spectrum of the quantum dot and the normalized ultraviolet-visible absorption spectrum of the color filter material claim 1 , an absorption termination wavelength of the ultraviolet absorption spectrum of the color filter material is present within or after a shorter wavelength tail region of the quantum dot.4. The photosensitive composition of claim 1 , wherein the range of the photoluminescence peak wavelength of the quantum dot is from about 500 nanometers to about 550 nanometers claim 1 , and the color filter material has an absorption initiation wavelength of greater than or equal to ...

Подробнее
Номер записи: 112
18-04-2019 дата публикации

COMPOSITIONS, QUANTUM DOT POLYMER COMPOSITE, AND LAYERED STRUCTURES AND ELECTRONIC DEVICES INCLUDING THE SAME

Номер: US20190112523A1
Автор: JANG Eun Joo, JANG Hyo Sook, JEONG Young-soo, KIM Tae Gon, KIM Yongwook, PARK Shang Hyeun
Принадлежит:

A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers. 1. A composition comprising:a plurality of quantum dots;a plurality of luminous carbon nanoparticles;a carboxylic acid group-containing binder;a polymerizable monomer comprising a carbon-carbon double bond; andan initiator,wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof,the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, andat least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.2. The composition of claim 1 , wherein the plurality of quantum dots do not comprise cadmium.3. The composition of claim 1 , wherein a quantum dot of the plurality of quantum dots comprises a core comprising a first semiconductor nanocrystal material and a shell disposed on the core and comprising a second semiconductor nanocrystal material claim 1 , the second semiconductor nanocrystal material being ...

Подробнее
Номер записи: 113
09-04-2020 дата публикации

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20200111933A1
Автор: CHUNG Dae Young, JANG Eun Joo
Принадлежит:

An electroluminescent device including an anode and a cathode facing each other, an emission layer disposed between the anode and the cathode, the emission layer including quantum dots, a hole auxiliary layer disposed between the emission layer and the anode and an electron auxiliary layer disposed between the emission layer and the cathode, wherein the electroluminescent device is configured such that electrons are dominant in the emission layer and a logarithmic value (log (HT/ET)) of a hole transport capability (HT) relative to an electron transport capability (ET) is less than or equal to about −1, or the electroluminescent device is configured such that holes are dominant in the emission layer and the logarithmic log value (log (HT/ET)) of the hole transport capability (HT) relative to the electron transport capability (ET) is greater than or equal to about 0.5. 1. An electroluminescent device , comprisingan anode and a cathode spaced from one another,an emission layer disposed between the anode and the cathode, the emission layer comprising quantum dots,a hole auxiliary layer disposed between the emission layer and the anode, andan electron auxiliary layer disposed between the emission layer and the cathode,wherein the electroluminescent device is configured to have an imbalance between electrons and holes in the emission layer at an operation of the device, whereby the electrons are dominant in the emission layer and a logarithmic value of a hole transport capability measured in milliamperes per square centimeter relative to an electron transport capability measured in milliamperes per square centimeter is less than or equal to about −1, orwhereby the holes are dominant in the emission layer and the logarithmic value of the hole transport capability measured in milliamperes per square centimeter relative to the electron transport capability measured in milliamperes per square centimeter is greater than or equal to about 0.5.2. The electroluminescent device of ...

Подробнее
Номер записи: 114
04-05-2017 дата публикации

QUANTUM DOTS, PRODUCTION METHODS THEREOF, AND ELECTRONIC DEVICES INCLUDING THE SAME

Номер: US20170121598A1
Автор: JANG Eun Joo, KIM Yongwook, MIN Jihyun, PARK Garam
Принадлежит:

A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: 1. A quantum dot having a perovskite crystal structure and comprising a compound represented by Chemical Formula 1:{'br': None, 'sub': '3+α', 'ABX\u2003\u2003Chemical Formula 1'}{'sub': '4', 'wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and'}wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.2. The quantum dot of claim 1 , wherein a photoluminescence peak wavelength of the quantum dot is in a range of about 300 nanometers to about 700 nanometers.3. The quantum dot of claim 1 , wherein a photoluminescence peak wavelength of the quantum dot is in a range of about 400 nanometers to about 680 nanometers.4. The quantum dot of claim 1 , wherein the quantum dot further comprises at least one of a first dopant and a second dopant claim 1 ,wherein the first dopant comprises potassium or a first metal having a crystal ionic radius of less than about 133 picometers, wherein the first metal is different from the Group IA metal and the Group IVA metal, andwherein the second dopant comprises a non-metal element that forms a bond with the Group IVA metal.5. The quantum dot of claim 4 , wherein the first metal has a smaller crystal ionic radius than a crystal ionic radius of the Group IVA metal of the B in Chemical Formula 1.6. The quantum dot of claim 4 , wherein the first metal is selected from Zn claim 4 , Cd claim 4 , Hg claim 4 , Ga claim 4 , In claim 4 , Tl claim 4 , Cu claim 4 , Al claim 4 , Li claim 4 , Na claim 4 , Be claim 4 , Mg claim 4 , Ca claim 4 , Sr claim 4 , Ag claim 4 , Pt claim 4 , Pd claim 4 , Ni claim 4 , Co claim 4 , Fe claim 4 , Cr claim 4 , Zr claim 4 , Mn claim 4 , Ti ...

Подробнее
Номер записи: 115
25-04-2019 дата публикации

SEMICONDUCTOR NANOCRYSTAL PARTICLES, PRODUCTION METHODS THEREOF, AND DEVICES INCLUDING THE SAME

Номер: US20190119569A1
Автор: JANG Eun Joo, KANG Hyun A, KIM Jin A, KIM Sung Woo, Kim Tae Hyung, LEE Jeong Hee, WON Yuho
Принадлежит:

A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: 1. A method of producing a quantum dot comprising zinc selenide , the method comprising: {'br': None, 'RCONHR\u2003\u2003Chemical Formula 1'}, 'providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solventwherein each R is the same or different and each independently is a substituted or unsubstituted aliphatic hydrocarbon having a carbon number of greater than or equal to 5, a substituted or unsubstituted aromatic hydrocarbon having a carbon number of greater than or equal to 6, or a substituted or unsubstituted alicyclic hydrocarbon having a carbon number of greater than or equal to 3;heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture;adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; andheating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.2. The method of claim 1 , wherein the carboxylic acid compound comprises a compound represented by Chemical Formula 2 claim 1 , and the primary amine compound comprises a compound represented by Chemical Formula 3:{'br': None, 'sup': '1', 'RCOOH\u2003\u2003Chemical Formula 2'}{'br': None, 'sup': '2', 'sub': '2', 'RNH\u2003\u2003Chemical Formula 3'}{'sup': 1', '2, 'wherein Rand Rare the same or different and each independently is a substituted or unsubstituted aliphatic hydrocarbon having a carbon number of greater than or equal to 5, a ...

Подробнее
Номер записи: 116
16-04-2020 дата публикации

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20200119296A1
Автор: CHO Oul, JANG Eun Joo, KIM Kwanghee
Принадлежит:

A light emitting device including a first electrode and a second electrode facing each other, a quantum dot emission film disposed between the first electrode and the second electrode, and a charge auxiliary layer disposed between the emission film and the first electrode, between the emission film and the second electrode, or between the emission film and the first electrode and between the emission film and the second electrode, wherein the quantum dot emission film includes a first surface facing the charge auxiliary layer and an opposite second surface. A manufacturing method of making the light emitting device, and a display device including the same. 1. A light emitting device , comprisinga first electrode and a second electrode facing each other,a quantum dot emission film disposed between the first electrode and the second electrode, anda charge auxiliary layer disposed between the quantum dot emission film and the first electrode, between the quantum dot emission film and the second electrode, or between the quantum dot emission film and the first and the second electrodes,wherein the quantum dot emission film comprises a first surface facing the charge auxiliary layer and an opposite second surface,the quantum dot emission film comprises a first emission layer comprising first quantum dots that constitute at least a portion of the first surface, and a second emission layer comprising second quantum dots that constitute at least a portion of the second surface, the second emission layer disposed on the first emission layer,wherein the first quantum dots and the second quantum dots do not comprise lead, andthe first quantum dots and the second quantum dots comprise a halide on at least a portion of their surfaces.2. The light emitting device of claim 1 , wherein the first emission layer and the second emission layer are not dissolved in a C1 to C10 alcohol solvent claim 1 , cyclohexyl acetate claim 1 , cyclohexane claim 1 , C5 to C20 alkane claim 1 , or a ...

Подробнее
Номер записи: 117
03-06-2021 дата публикации

SEMICONDUCTOR NANOCRYSTAL, AND METHOD OF PREPARING THE SAME

Номер: US20210167228A1
Автор: JANG Eun Joo, JUN Shin Ae, KIM Taek Hoon, KWON Soo Kyung, LEE Won Joo
Принадлежит:

A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSeS, wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1. 1. A nanocrystal comprising:a core comprising a Group III element, and a Group V element; anda shell overcoating the core and comprising ZnSeS multi-layers comprising Zn, Se, and S,{'sub': y', '(1-y), 'wherein each of the ZnSeS multi-layers of the shell comprises a compound of the formula ZnSeS, wherein 0≤y≤1, and'}wherein the ZnSeS multi-layers have a Se:S concentration ratio gradient, wherein the Se:S concentration ratio gradient comprises an increasing to concentration of Se and a decreasing concentration of S in a direction from the core to a predetermined monolayer; and a decreasing concentration of Se and an increasing concentration of S in a direction from the predetermined monolayer to an outermost monolayer, wherein the predetermined monolayer is located between a first monolayer directly disposed on the surface of the core and the outermost monolayer.2. The nanocrystal of claim 1 , wherein the average ratio of y:(1−y) ranges from about 5:1 to about 20:1 in the first monolayer directly disposed on the surface of the core.3. The nanocrystal of claim 1 , wherein the core further comprises a Group II metal.4. The nanocrystal of claim 1 , wherein the core comprises a compound selected from GaN claim 1 , GaP claim 1 , GaAs claim 1 , GaSb claim 1 , AlN claim 1 , AlP claim 1 , AlAs claim 1 , AlSb claim 1 , InN claim 1 , InP claim 1 , InAs claim 1 , and InSb claim 1 , GaNP claim 1 , GaNAs claim 1 , GaNSb claim 1 , GaPAs claim 1 , GaPSb claim 1 , AlNP claim 1 , AlNAs claim 1 , AlNSb claim 1 , AlPAs claim 1 , AlPSb claim 1 , InNP claim 1 , InNAs claim 1 , InNSb claim 1 , InPAs claim 1 , InPSb claim 1 , GaAlNP claim 1 , AlGaN claim 1 , AlGaP claim 1 , AlGaAs claim 1 , ...

Подробнее
Номер записи: 118
14-08-2014 дата публикации

WHITE LIGHT EMITTING DIODE AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME

Номер: US20140226105A1
Автор: CHOI Seo-Young, IM Seoung-jae, JANG Eun-Joo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the blue LED light source into white light. The light conversion layer includes a green light emitting semiconductor nanocrystal and a red light emitting semiconductor nanocrystal. The white light emitting diode has a red, green and blue color (“RGB”) color locus which is within a chrominance error range (±4ΔE*ab±2ΔE*ab) locus from the constant hue locus of each of sRGB color coordinates, or within a chrominance error range (±4ΔE*ab±2ΔE*ab) locus from the constant hue locus of each of AdobeRGB color coordinates. 1. A back light unit comprising:a light emitting diode light source; anda light conversion layer which converts incident light from the light emitting diode light source into white light,wherein at least two of red, green and blue color coordinate loci of the white light are within a chrominance error range (±4ΔE*ab) locus from the constant hue locus of sRGB color coordinates, or within a chrominance error range (±4ΔE*ab) locus from the constant hue locus of AdobeRGB color coordinates,wherein the light conversion layer comprises semiconductor nanocrystals.2. The back light unit of claim 1 , wherein the at least two of red claim 1 , green and blue color coordinate loci of the white light are within a chrominance error range (±2ΔE*ab) locus from the constant hue locus of sRGB color coordinates claim 1 , or within a chrominance error range (±2ΔE*ab) locus from the constant hue locus of AdobeRGB color coordinates.3. The back light unit of claim 1 , wherein the at least two of red claim 1 , green and blue color coordinate loci of the white light which are within a chrominance error range (±4ΔE*ab) locus from the constant hue locus of sRGB color coordinates claim 1 , or within a chrominance error range (±4ΔE*ab) locus from the constant hue locus of AdobeRGB color coordinates include the blue color coordinate locus. ...

Подробнее
Номер записи: 119
14-08-2014 дата публикации

WHITE LIGHT EMITTING DIODE AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME

Номер: US20140226109A1
Автор: CHOI Seo-Young, IM Seoung-jae, JANG Eun-Joo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the blue LED light source into white light. The light conversion layer includes a green light emitting semiconductor nanocrystal and a red light emitting semiconductor nanocrystal. The white light emitting diode has a red, green and blue color (“RGB”) color locus which is within a chrominance error range (±4ΔE*ab±2ΔE*ab) locus from the constant hue locus of each of sRGB color coordinates, or within a chrominance error range (±4ΔE*ab±2ΔE*ab) locus from the constant hue locus of each of AdobeRGB color coordinates. 1. A back light unit comprising:a light emitting diode light source; anda light conversion layer which converts incident light from the light emitting diode light source into white light,wherein at least two of red, green and blue color coordinate loci of the white light are within a chrominance error range (±4ΔE*ab) locus from the constant hue locus of sRGB color coordinates, or within a chrominance error range (±4ΔE*ab) locus from the constant hue locus of AdobeRGB color coordinates,wherein the light conversion layer comprises a plurality of light emitting semiconductor nanocrystals having a core-shell structure.2. The back light unit of claim 1 , wherein the light emitting semiconductor nanocrystals comprise a Group II-VI compound selected from a group consisting of CdS claim 1 , CdSe claim 1 , CdTe claim 1 , ZnS claim 1 , ZnSe claim 1 , ZnTe claim 1 , ZnO MgSe claim 1 , MgS claim 1 , CdSeS claim 1 , CdSeTe claim 1 , CdSTe claim 1 , ZnSeS claim 1 , ZnSeTe claim 1 , ZnSTe claim 1 , CdZnS claim 1 , CdZnSe claim 1 , CdZnTe claim 1 , MgZnSe claim 1 , MgZnS claim 1 , CdZnSeS claim 1 , CdZnSeTe claim 1 , CdZnSTe claim 1 , and a mixture thereof.3. The back light unit of claim 1 , wherein the light emitting semiconductor nanocrystals comprise a Group III-V compound selected from a group consisting of GaN claim 1 , ...

Подробнее
Номер записи: 120
09-05-2019 дата публикации

SEMICONDUCTOR NANOCRYSTAL, AND METHOD OF PREPARING THE SAME

Номер: US20190140113A1
Автор: JANG Eun Joo, JUN Shin Ae, KIM Taek Hoon, KWON Soo Kyung, LEE Won Joo
Принадлежит:

A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSeS, wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1. 1. A nanocrystal comprising:a core comprising a Group III element, and a Group V element; anda shell overcoating the core and comprising ZnSeS multi-layers comprising Zn, Se, and S,{'sub': y', '(1-y), 'wherein each of the ZnSeS multi-layers of the shell comprises a compound of the formula ZnSeS, wherein 0≤y≤1, and'}wherein the ZnSeS multi-layers have a Se:S concentration ratio gradient, wherein the Se:S concentration ratio gradient comprises an increasing to concentration of Se and a decreasing concentration of S in a direction from the core to a predetermined monolayer; and a decreasing concentration of Se and an increasing concentration of S in a direction from the predetermined monolayer to an outermost monolayer, wherein the predetermined monolayer is located between a first monolayer directly disposed on the surface of the core and the outermost monolayer.2. The nanocrystal of claim 1 , wherein the average ratio of y:(1−y) ranges from about 5:1 to about 20:1 in the first monolayer directly disposed on the surface of the core.3. The nanocrystal of claim 1 , wherein the core further comprises a Group II metal.4. The nanocrystal of claim 1 , wherein the core comprises a compound selected from GaN claim 1 , GaP claim 1 , GaAs claim 1 , GaSb claim 1 , AlN claim 1 , AlP claim 1 , AlAs claim 1 , AlSb claim 1 , InN claim 1 , InP claim 1 , InAs claim 1 , and InSb claim 1 , GaNP claim 1 , GaNAs claim 1 , GaNSb claim 1 , GaPAs claim 1 , GaPSb claim 1 , AlNP claim 1 , AlNAs claim 1 , AlNSb claim 1 , AlPAs claim 1 , AlPSb claim 1 , InNP claim 1 , InNAs claim 1 , InNSb claim 1 , InPAs claim 1 , InPSb claim 1 , GaAlNP claim 1 , AlGaN claim 1 , AlGaP claim 1 , AlGaAs claim 1 , ...

Подробнее
Номер записи: 121
30-04-2020 дата публикации

Quantum dot display device

Номер: US20200135967A1
Автор: Eun Joo Jang, Oul CHO, Tae Hyung Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A quantum dot display device includes a substrate, a quantum dot diode disposed on the substrate and including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and an encapsulation film disposed on a surface of the quantum dot diode, wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.

Подробнее
Номер записи: 122
15-09-2022 дата публикации

INKJET PRINTHEAD

Номер: US20220288930A1
Автор: CHUNG You Jung, JANG Eun Joo, JANG Hyo Sook, Kim Tae Ho, Kim Tae Hyung
Принадлежит:

An inkjet printhead includes a head body in which a first fine channel that is connected to an ink inlet and thus guides an inflow of ink, a second fine channel that is disposed below the first fine channel, communicated with the first fine channel through a connection via hole, and guides an outflow of the ink by being connected to an ink outlet, and a nozzle that is opened downward from the second fine channel are defined, and a micro heater that is disposed closer to the connection via hole in an upper portion of the first fine channel than to an end of the first fine channel where the first fine channel is connected to the ink inlet or an end of the second fine channel where the second fine channel is connected to the ink outlet. 1. An inkjet printhead comprising:a head body in which a first fine channel which is connected to an ink inlet and thus guides an inflow of ink, a second fine channel which is disposed below the first fine channel, communicated with the first fine channel through a connection via hole, and guides an outflow of the ink by being connected to an ink outlet, and a nozzle which is opened downward from the second fine channel are defined; anda micro heater which is disposed closer to the connection via hole in an upper portion of the first fine channel than to an end of the first fine channel where the first fine channel is connected to the ink inlet or an end of the second fine channel where the second fine channel is connected to the ink outlet.2. The inkjet printhead of claim 1 , further comprising a passivation layer which is adjacent to the upper portion of the first fine channel and accommodates the micro heater.3. The inkjet printhead of claim 2 , wherein the passivation layer comprises a polyimide.4. The inkjet printhead of claim 1 , whereinthe first fine channel, the connection via hole, and the second fine channel are communicated with each other and guide a flow of the ink in one direction such that the ink is circulated.5. The ...

Подробнее
Номер записи: 123
15-09-2022 дата публикации

QUANTUM DOT DEVICE, FILM HAVING MULTILAYERED STRUCTURE, AND ELECTRONIC DEVICE

Номер: US20220290048A1
Автор: JANG Eun Joo, KIM Kwanghee, LEE Seungjin, Sargent Ted
Принадлежит:

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film. 1. A quantum dot device , comprisinga first electrode and a second electrode,a quantum dot layer disposed between the first electrode and the second electrode, anda hole transport layer disposed between the quantum dot layer and the first electrode, a first hole transport layer comprising a three-dimensional structure perovskite thin film, and', 'a second hole transport layer comprising a two-dimensional structure perovskite thin film., 'wherein the hole transport layer comprises'}2. The quantum dot device of claim 1 , wherein the three-dimensional structure perovskite thin film comprises a perovskite compound represented by Chemical Formula 1:{'br': None, 'sub': '3', 'AMX\u2003\u2003Chemical Formula 1'}wherein, in Chemical Formula 1,A is an ammonium cation having a C1 or C2 alkyl group, an ammonium cation having a C1 or C2 haloalkyl group, an ammonium cation having a C1 or C2 cyanoalkyl group, an ammonium cation having a C1 or C2 alkoxy group, a formamidinium cation, a halogen-substituted formamidinium cation, an alkali metal ion, or a combination thereof,M is a transition metal, a rare earth metal, or a combination thereof, and{'sup': −', '−', '−, 'sub': 6', '4, 'X is a halide ion, a combination of two or more different halide ions, CNS, PF, or BF.'}4. The quantum dot device of claim 1 , wherein the two-dimensional structure perovskite thin film ...

Подробнее
Номер записи: 124