НАНОСТРУКТУРА, ПРЕДШЕСТВЕННИК НАНОСТРУКТУРЫ И СПОСОБ ФОРМИРОВАНИЯ НАНОСТРУКТУРЫ И ПРЕДШЕСТВЕННИКА НАНОСТРУКТУРЫ

Изобретение относится с наноструктурам и способам их роста. Сущность изобретения: Способ формирования наноструктуры предусматривает осаждение пакета слоев на проводящей подложке и выращивание наноструктур на упомянутом пакете слоев, при этом упомянутый пакет слоев содержит по меньшей мере один промежуточный слой и слой катализатора, сформированный на упомянутом по меньшей мере одном промежуточном слое, а упомянутый по меньшей мере один промежуточный слой выполнен из материала, который отличается от материала упомянутой проводящей подложки и материала упомянутого слоя катализатора, при этом упомянутый пакет слоев содержит материалы, позволяющие взаимодиффузию упомянутых слоев. Изобретение обеспечивает получение наноструктур с управляемым составом и свойствами. 4 н. и 10 з.п. ф-лы, 55 ил.

ORGANISCHE ELEKTRONISCHE / OPTOELEKTRONISCHE BAUELEMENTE

Elektronisches oder optoelektronisches Bauelement beinhaltend eine Halbleiterschicht, wobei die Halbleiterschicht mindestens ein halbleitendes organisches Material, Wasserspezies und mindestens ein Additiv in einer Menge von mindestens 0,1 Gewichts-% bezogen auf das halbleitende organische Material umfasst, wobei das Additiv zumindest teilweise einen Ladungsträgereinfangeffekt verhindert, der durch die Wasserspezies im halbleitenden organischen Material verursacht wird.

Einheit und Methode zumn Schalten einer Einheit

Eine schaltbare elektronische Einheit umfasst eine Lochblockierende Schicht und eine Schicht, die ein leitfähiges Material zwischen ersten und zweiten Elektroden umfasst, wobei die Leitfähigkeit der Einheit durch Anwendung eines Stromes mit einer Stromdichte von weniger als oder gleich 10 Acm2 irreversibel zu einer Leitfähigkeit, die mindestens 100 mal geringer als die Leitfähigkeit der Einheit vor dem Schalten ist, geschaltet werden kann. Das leitfähige Material ist ein dotiertes organisches Material, wie etwa dotiertes optional substituiertes Polyethylen dioxythiophen).

Verfahren zur Herstellung elektrolumineszierender Vorrichtungen

Organische Solarzelle und Verfahren zu deren Herstellung

Organische Solarzelle, umfassend: eine erste Elektrode; eine zweite Elektrode; eine photoaktive Schicht, die zwischen der ersten Elektrode und der zweiten Elektrode angeordnet ist; und eine Elektronenextraktionsschicht, die zwischen der photoaktiven Schicht und der zweiten Elektrode angeordnet ist, wobei die Elektronenextraktionsschicht ein ionisches Polymer enthält.

Vorrichtung zur Herstellung eines halbleitenden und/oder Elektrolumineszenz zeigenden organischen Schichtaufbaus

Polymergemische für gedruckte Polymerelektronik-Schaltungen

Um die Viskosität halbleitender Polymere in Lösung zu erhöhen, werden diese mit nicht-halbleitenden Polymeren gemischt.

Unpolare Lösungsmittel als Haftvermittler-Additiv in PEDOT/PSS-Dispersionen

Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung eines Schichtkörpers, mindestens beinhaltend die Verfahrensschritte: IV) das Bereitstellen einer foto-aktiven Schicht; V) das Überlagern der foto-aktiven Schicht mit einer Beschichtungszusammensetzung mindestens beinhaltend e) ein elektrisch leitfähiges Polymer, f) ein organisches Lösungsmittel, das zumindest teilweise Entfernen des organischen Lösungsmittels b) aus der im Verfahrensschritt II) überlagerten Zusammensetzung unter Erhalt einer auf die foto-aktive Schicht überlagerten elektrisch leitfähigen Schicht und betrifft weiterhin den durch dieses Verfahren erhältlichen Schichtkörper, einen Schichtkörper, eine organische Photovoltaik-Zelle, ein Solarzellen-Modul, eine Zusammensetzung sowie die Verwendung einer Zusammensetzung.

GEMUSTERTE BESCHICHTUNG MIT KOMPRIMIERTEM KOHLENDIOXID

Gatter aus organischen Feldeffekttransistoren

Es wird ein Elektronikbauteil, insbesondere RFID-Transponder, mit mindestens einem Logik-Gatter (3) beschrieben, bei dem das Logik-Gatter (3) aus mehreren auf einem gemeinsamen Substrat (10) aufgebrachten Schichten gebildet ist, die zumindest zwei Elektrodenschichten, zumindest eine aus einer Flüssigkeit aufgebrachte, insbesondere organische, Halbleiterschicht (13, 23) und eine Isolatorschicht (14, 24) umfassen und die so ausgebildet sind, daß das Logik-Gatter mindestens zwei unterschiedlich aufgebaute Feldeffekttransistoren (1, 2) umfaßt. Die Feldeffekttransistoren (1, 2) sind aus mehreren funktionalen Schichten ausgebildet, die auf ein Trägersubstrat (10) durch Drucken oder Rakeln aufbringbar sind.

Low contact resistance organic thin film transistors

Organic semiconductor compositions

Continuous process for preparing nanodispersions using an ultrasonic flow-through heat exchanger

Light emitting composition and device

Perovskite nanofilms

Organic semiconductor formulation

Manufacture of optic, electronic or optoelectronic devices

Electronic devices and methods of making the same using solution processing techniques

Production of carbon nanotube-molecular semiconductor thin film

A method of producing a thin film of an organic molecular semiconductor with uniformly dispersed carbon nanotubes is disclosed. The method comprises adapting the carbon nanotubes and the molecular semiconductor to make them soluble. The molecular semiconductor is also adapted to facilitate high molecular order and frontier orbital overlap between adjacent molecules. The soluble carbon nanotubes and the soluble molecular semiconductor are combined in a solvent to form a solution and a thin film is produced from the solution, e.g. by spin casting. The molecular semiconductor is preferably a porphyrin or phthalocyanine. The thin film is useful as a carrier injection layer in organic electronic devices such as solar cells, organic light emitting diodes, backlights for liquid crystal displays and system on chip devices.

Organic photovoltaic device comprising polycrystalline discotic liquid crystal

Nanoparticles

Organic electronic device and method of manufacture

A method of forming an organic electronic device comprising the steps of: forming a surface modification layer comprising a partially fluorinated fullerene on at least part of a surface of at least one electrode of the device by depositing a solution comprising the partially fluorinated fullerene and at least one solvent onto the electrode surface; and forming an organic semiconductor layer comprising at least one organic semiconductor on the surface modification layer. The partially fluorinated fullerene is a partially fluorinated Buckminster fullerene, optionally a partially fluorinated C60.

Optical device

Organic thin film transistors, active matrix organic optical devices and methods of making the same

A method of manufacturing an organic thin film transistor, comprising: providing a substrate comprising source and drain electrodes defining a channel region; forming a patterned layer of insulting material defining a well surrounding the channel region; depositing a protective layer in the well; subjecting exposed portions of the patterned layer of insulating material to a de-wetting treatment to lower the wettability of the exposed portions; removing the protective layer; and depositing organic semiconductive material from solution into the well.

Organic light-emitting materials and devices

Polymer

A polymer comprising an optionally substituted repeat unit of formula (I):wherein R1 and R2 in each occurrence are independently selected from H or a substituent; R1 and R2 may be linked to form a ring; and A is an optionally substituted linear, branched or cyclic alkyl group.

Method for re-dyeing dye sensitised solar cells

The present invention relates to the field of dye sensitised solar cells and discloses a method for multiple desensitising and re-dyeing, including partial desensitisation and multiple re-dyeing with single or mixed dyes.

Organic Light Emitting Device

An organic light-emitting device (100) comprising an anode (103); a cathode (109); a first light-emitting layer (107) comprising a first light-emitting material between the anode and the cathode; and a hole-transporting layer (105) comprising a hole-transporting polymer between the anode and the first light-emitting layer and adjacent to the first light-emitting layer, wherein a HOMO level of the first light-emitting material is closer to vacuum than a HOMO level of the hole-transporting polymer and wherein more than 50 mol % of the repeat units of the hole-transporting polymer are hole-transporting repeat units. Also shown is an organic light-emitting device comprising a hole transporting light-emitting layer wherein the layer comprises a hole-blocking light-emitting material and a hole transporting polymer.

Electrode surface modification layer for electronic devices

There is disclosed a method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising: (i) depositing a solution comprising M(tfd)3, wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of said electrode; and (ii) removing at least some of said solvent to form said surface modification layer on said electrode.

A fin structure employing self-aligned carbon nanotubes

Organic thin film transistors

A method of forming an organic thin film transistor includes a process for aligning the organic semiconductor molecules to improve charge mobility in the channel region. A surface outside the channel region is seeded with one or more crystallisation sites 14, 16 prior to deposition of a solution of the organic semiconductor 8 onto the seeded surface and over the channel region. The crystallisation sites may comprise boundaries between surface patterns with differing wetting properties, or physical structures. The organic semiconductor forms a crystal domain at the crystallisation sites (fig 4; 8), the crystal domain growing from its crystallisation site across the channel region in a direction determined by an advancing surface evaporation front. The direction and rate of movement of the surface evaporation front is controlled for example by dragging a shearing substrate in contact with the orgainic semiconductor thereby controlling the direction and rate of growth of each crystal domain ...

Compounds for use in opto-electrical devices

Templating films

Method of preparing opto-electronic device

Cross-linked polymers

A gate dielectric for organic transistor devices is formed by depositing a layer of acrylol or methacrylol precursor material on a semiconductor layer and exposing the precursor layer to an argon plasma to produce a cross-linked polymer.

Electroluminescent display device

Organic semiconductor compositions

An organic semiconductor composition comprising a polyacene and an organic binder, which is a semiconducting binder having a permittivity at 1000Hz of 3.4 to 8.0. The polyacene may be an optionally substituted anthracene, tetracene (naphthacene), pentacene, hexacene or heptacene, wherein said substituents may form carbocyclic/heterocyclic rings fused with the polyacene. Preferred polyacenes include compounds doubly substituted by branched alkylsiliylethynyl groups and methoxy groups and polyacenes further condensed with thiophene rings at each end of the polyacene molecule, said compounds also being doubly substituted by branched alkylsiliylethynyl groups and also substituted at each thiophene ring by ethyl groups. Preferred binders include poly(triarylamines) wherein at least one of the aryl groups is substituted by a polarising group, preferably selected from cyanoalkyl, alkoxy and nitrile groups. The composition can be used in organic semiconductor layers and devices, particularly in ...

Organic electronic device

An organic electronic device which comprises a metal anode 4 and a hole injection layer 6, said device further comprising a self-assembled monolayer (SAM) 22 between the metal anode 4 and the hole injection layer 6, the SAM 22 comprising a compound which has a moiety which is capable of adsorbing onto the surface of the metal anode 4 and a hydrophilic moiety. Also disclosed is a method of forming said device. Further disclosed is a material which can form a SAM which can passivate a metal anode in an organic electronic device and prevent oxidation of said anode, where the SAM contains a compound which has a hydrophilic group which improves the wettability of the surface of the anode. Also disclosed is a compound which can form a SAM, where the SAM reduces the contact resistance between a metal anode and a hole injection layer and contains a hydrophilic moiety. The hydrophilic moiety can be a derivative of benzotriazole or indazole, which has a hydroxyl, carboxy, carbonyl or thio hydrophilic ...

Organic thin film transistors and method of making them

An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface- modification layers consist essentially of a partially fluorinated fullerene.

High resolution structures defined by brush painting fluid onto surface energy patterned substrates

Nanoparticles

Organic light emitting diode display device

Composition and organic light-emitting device

A composition comprising a compound of formula (I) and a phosphorescent compound of formula (II) in which LI is a bidentate ligand of formula (III): Wherein Y may be a direct bond or an arylene or heteroarylene group; Z is O or S; R1-3 are each independently a substituent; x and y are each independently 0-4; M is Ir (III) or Pt (II): Ar2 is a 5-20 membered heteroaryl; Ar3 is a C6-20 aryl or 5-20 membered heteroaryl; A is C or N; W is N if A is C and W is a carbene C if A is N; L2 is a bidentate ligand which is different from L1; p is at least 1; q is 0-2; each X independently comprises an aromatic or heteroaromatic group Ar5 and at least one of v and w is 1; the sum of the number of rings comprised in the one or more X groups of formula (II) is at least 12 and at least 75% of the mass of each X is made up of the mass of the aromatic or heteroaromatic ring atoms of Ar5. Formulations and organic light emitting devices comprising the compositions are disclosed.

Molecular electronic device

Electroluminescent display device and method of manufacturing the same

Electroluminescent display device comprising a plurality of sub-pixels R, G, B on substrate 110, the plurality of sub-pixels comprising sub-pixels of different and the same colors along a first direction IV-IV’ (Figure 3) and second direction V-V respectively (Figure 3). Light-emitting diode De is disposed at each sub-pixel, wherein the diode comprises a first electrode 162, a light-emitting layer 180 and a second electrode 190. First bank 172 is disposed between adjacent sub-pixels along the second direction, wherein the first bank is disposed such that it overlaps with edges of the first electrode. Second bank 174 has an opening corresponding to the sub-pixels arranged along the second direction and disposed between adjacent sub-pixels along the first direction. Third bank 176 (Figure 5) is disposed on the side surfaces of the second bank that are facing each other along the second direction corresponding to the opening. Method of manufacturing the same.

Electroluminescent display device and method of manufacturing the same

PROCEDURE FOR THE PRODUCTION OF OPTICAL EQUIPMENT

PROCEDURE FOR THE PRODUCTION OF A MULTI-LAYER THING

Process FOR the PRODUCTION of an ORGANIC SEMICONDUCTOR FILM

Flexible hose supply line for appliance fire suppression system

Process of forming a photoactive layer of a perovskite photoactive device

A process of forming a thin film photoactive layer of a perovskite photoactive device comprising: applying at least one coating of a perovskite precursor solution and a polymer additive to a substrate, wherein the at least one perovskite precursor solution comprises at least one reaction constituent for forming at least one perovskite compound having the formula AMX ...

Solar cell and process for producing the same

The present invention relates to photoanodes, solar cells and methods and processes for producing the same. In some embodiments, the solar cells of the invention can do without a sintered nanoporous scaffold layer, making it possible to produce the solar cells in low- temperature procedures. In some embodiments, the invention encompasses organic- inorganic perovskite sensitizers, deposited on a smooth metal oxide layer. In some embodiments, the organic-inorganic perovskite sensitizers are deposited in a two-step sequential process.

Perovskite material layer processing

A method for processing a perovskite photoactive layer. The method comprises depositing a lead salt precursor onto a substrate to form a lead salt thin film, depositing a second salt precursor onto the lead salt thin film, annealing the substrate to form a perovskite material.

QUASI TWO-DIMENSIONAL LAYERED PEROVSKITE MATERIAL, RELATED DEVICES AND METHODS FOR MANUFACTURING THE SAME

Optoelectronic devices, such as photovoltaic device and light-emitting diode, are provided. The devices include a quasi two-dimensional layered perovskite material and a passivating agent chemically bonded to the quasi two-dimensional layered perovskite material. The passivating agent includes a phosphine oxide compound. An active material is also provided. The active material includes a quasi two-dimensional perovskite compound having outermost edge(s), and a passivating agent chemically bonded to the outermost edge(s). The passivating agent includes a phosphine oxide compound. Methods for manufacturing the optoelectronics devices and the active material are also provided.

METHOD OF FABRICATION OF ELECTRONIC DEVICES USING MICROFLUIDIC CHANNELS

A structure and method of using microfluidic channels to form an array of semiconductor devices is described. The microfluidic channels have been found to be particularly useful when formed in a self aligned process and used to interconnect a series of thin film transistor (TFT) devices.

PEROVSKITE MATERIAL LAYER PROCESSING

A method for processing a perovskite photoactive layer. The method comprises depositing a lead salt precursor onto a substrate to form a lead salt thin film, depositing a second salt precursor onto the lead salt thin film, annealing the substrate to form a perovskite material.

ELECTROLUMINESCENT DEVICE

Broadly speaking, embodiments of the present invention provide a solid state light- emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

THIENOTHIOPHENE BORON (DONOR-ACCEPTOR) BASED MATERIALS FOR ORGANIC LIGHT EMITTING DIODES

The present invention discloses new molecules having defined structures of a series of thienothiophene (TT), dithienothiophene (DTT) and boron derivatives, light emitting devices of which are expected to be applied to organic light emitting diodes (OLED).

METHOD OF FORMULATING PEROVSKITE SOLAR CELL MATERIALS

A method for preparing photoactive perovskite materials. The method comprises the step of preparing a lead halide precursor ink. Preparing a lead halide precursor ink comprises the steps of: introducing a lead halide into a vessel, introducing a first solvent to the vessel, and contacting the lead halide with the first solvent to dissolve the lead halide. The method further comprises depositing the lead halide precursor ink onto a substrate, drying the lead halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS

An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and an infrared absorbing agent. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric polymer. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The infrared absorbing agent allows the dielectric composition to attain a temperature that is significantly greater than the temperature attained by the substrate during curing. This difference in temperature allows the dielectric layer to be cured at relatively high temperatures and/or shorter time periods, permitting the selection of lower- cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

ELECTRONIC DEVICES COMPRISING STRUCTURED ORGANIC FILMS

An electronic device comprising a structured organic film with an added functionality comprising a plurality of segments and a plurality of linkers arranged as a covalent organic framework, wherein the structured organic film may be multi-segment think structured organic film.

PROCESS FOR PREPARING STRUCTURED ORGANIC FILMS (SOFS) VIA A PRE-SOF

A process for preparing structured organic film (SOF) comprising a plurality of segments and plurality of linkers arranged as a covalent organic framework, wherein the structured organic film may be multi-segment think structured organic film by reaction of pre-SOF.

PROCESS FOR PREPARING STRUCTURED ORGANIC FILMS (SOFS) VIA A PRE-SOF

A process for preparing structured organic film (SOF) comprising a plurality of segments and plurality of linkers arranged as a covalent organic framework, wherein the structured organic film may be multi-segment think structured organic film by reaction of pre-SOF.

Electronic component, method for its production and its use

The present invention relates to an electronic component having at least one anode, at least one cathode, at least one charge injection layer, at least one layer of an organic semiconductor and at least one layer situated between the charge injection layer and the organic semiconductor layer, which component is characterized in that the layer situated between the charge injection layer and the organic semiconductor layer and the organic semiconductor layer are obtainable by coating the charge injection layer with a mixture composing at least one material which can be made insoluble by means of chemical reaction, and at least one organic semiconductor, method for producing said component and use of said component.

quantum multi-layer the quantum dot of a light-emitting device and method for forming the same

Polymer, composition for organic electroluminescent element, organic electroluminescent element, organic el display device, and organic el lighting

Polymer compound and light-emitting element using same

Thin film deposition method and device of organic electroluminescent device

Nano-structure on the substrate and the controllable growth of the electron-emitting devices based on the

Phthalocyanine nano-size structure, and the use of the nano-size of the structure of the electronic element

PROCESS FOR the MANUFACTURE Of an ORGANIC SEMICONDUCTOR LAYER MADE UP Of a MIXTURE Of a FIRST AND SECOND SEMICONDUCTOR MATERIALS

Ce procédé pour la fabrication d'une couche semi-conductrice organique constituée d'un mélange d'un premier et d'un second matériaux semi-conducteurs organiques, comporte les étapes suivantes : ▪ réalisation d'un volume solide poreux constitué du premier matériau semi-conducteur , de porosité ouverte et adaptée pour recevoir un second matériau semi-conducteur ; ▪ dépôt, au moins sur une surface externe du volume solide poreux, d'un liquide comportant le second matériau semi-conducteur dissout ou dispersé dans un solvant, le solvant étant inerte vis-à-vis du premier matériau semi-conducteur et de température d'évaporation inférieure à la température d'évaporation du second matériau semi-conducteur ; et ▪ une fois le volume solide poreux au moins partiellement imbibé par le liquide, évaporation du solvant par chauffage à une température supérieure à la température d'évaporation dudit solvant et inférieure à la température d'évaporation du premier et du second matériaux semi-conducteurs.

THIN FILM COATING APPARATUS

The present invention relates to a thin film coating apparatus which can easily coat even with the low rotation speed by additionally having an element to control compared to the existing coating method. More specifically, the present invention provides a thin film coating apparatus which comprises: a driving unit rotating a shaft; a connecting unit coupled to the shaft; and a mounting unit coupled to the connecting unit to fixate a coating target on an upper surface, and rotated on a shaft line of the driving unit. COPYRIGHT KIPO 2017 ...

SOLUTIONS OF ORGANIC SEMICONDUCTORS

박막 트랜지스터 어레이 기판 및 그 제조 방법

... 본 발명은 박막 트랜지스터 어레이 기판 및 그 제조 방법을 개시한다. 개시된 본 발명의 박막 트랜지스터 어레이 기판 및 그 제조 방법은 수평방향으로 배치되는 다수개의 제 1 및 제 2 서브화소를 포함하는 기판에 있어서, 상기 제 1 서브화소는 제 1 발광영역 및 제 1 비 발광영역을 포함하고, 상기 제 2 서브화소는 제 2 발광영역 및 제 2 비 발광영역을 포함한다. 여기서, 상기 제 1 및 제 2 발광영역은 제 1 비 발광영역과 제 2 비 발광영역 사이에 배치된다. 이를 통해, 고해상도의 유기전계발광 표시장치에서도 제 1 발광영역 및 제 2 발광영역 상에 액상의 유기발광물질을 섞임 없이 배치할 수 있다.

DEPOSITION OF CONDUCTING POLYMERS

전기 소자의 제조 방법과 이를 위한 전기 소자 어레이 및 그 제조 방법

... 전기 소자 어레이의 제조 방법을 제시한다. 미세 채널 구조를 포함하는 플랫폼을 기판에 부착하고, 조성이 서로 다른 제1 용액과 제2 용액을 미세 채널 구조에 주입하고 용매를 증발시켜 박막열을 기판에 형성한다. 박막열의 길이 방향을 따라 서로 다른 조건으로 박막열을 처리한다.

함량이 변하는 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자

... 그래디언트 구조의 유무기 하이브리드 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자를 제공한다. 그래디언트 구조의 유무기 하이브리드 페로브스카이트 나노결정입자 발광체는 유기 용매에 분산이 가능한 유무기 하이브리드 페로브스카이트 나노결정을 포함하고, 상기 나노결정은 중심에서 외부방향으로 갈수록 조성이 변하는 그래디언트 조성을 갖는다. 따라서, 나노결정 내의 점진적인 함량 변화는 나노결정 내의 분율을 균일하게 조절하고, 표면 산화를 줄여 내부에 다량 존재하는 페로브스카이트 안에서의 엑시톤 구속 (exciton confinement)를 향상시켜 발광 효율을 증가시킬 뿐만 아니라 내구성-안정성도 증가시킬 수 있다.

METHOD FOR DRYING LAYERS OF ORGANIC SEMICONDUCTORS, CONDUCTORS OR COLOR FILTERS USING IR AND NIR RADIATION

Composite structured organic films

... 본 발명은 공유 유기 골격체로서 배열된 다수의 세그먼트와 다수의 링커를 포함하는, 추가 기능을 갖는 구조화 유기 필름에 관한 것이며, 여기서, 상기 구조화 유기 필름은 멀티-세그먼트 두께의 구조화 유기 필름일 수 있다.

ORGANIC THIN FILM TRANSISTOR AND METHOD OF MAKING THEM

적어도 1개의 벤조[C][1,2,5]티아디아졸-5,6-디카르보니트릴-단위를 포함하는 중합체의 제조

... 본 발명은 화학식 5의 화합물 (여기서, Y2는 I, Br, Cl 또는 O-S(O)2CF3임)을 S-공여자로 처리하여 화학식 4의 화합물 (여기서, Y2는 화학식 5의 화합물에 대하여 정의된 바와 같음)을 수득하는 단계 (v)를 포함하는, 화학식 1의 적어도 1개의 단위를 포함하는 중합체의 제조 방법, 화학식 4의 화합물의 제조 방법 및 화학식 4의 화합물을 제공한다.

ORGANIC SEMICONDUCTOR FORMULATION

ORGANIC LIGHT-EMITTING DIODE LUMINAIRES

METHOD FOR MANUFACTURING LAMINATED FILM, ELECTRO-OPTICAL DEVICE, METHOD FOR MANUFACTURING ELECTRO-OPTICAL DEVICE, ORGANIC ELECTROLUMINESCENCE DEVICE, AND ELECTRONIC APPLIANCES, CAPABLE OF MAINTAINING CHEMICAL AND PHYSICAL PROPERTIES OF MATERIAL LAYER IN DESIRED CONDITIONS

PURPOSE: A method for manufacturing laminated film, an electro-optical device, a method for manufacturing electro-optical device, an organic electroluminescence device, and an electronic appliances are provided to remove solvents from the layers while maintaining chemical properties and physical properties of each layer in the laminated layer by forming at least a part of the laminated layers under a supercritical condition above the critical points of the solvents (impurities) contained in the layers. CONSTITUTION: An organic electroluminescence display(1) includes a plurality of layers including a low refractivity layer(3), a seal layer(4), a positive electrode(8), a luminous layer(5), a positive hole transfer layer(6) and a negative electrode(7) laminated on a substrate(2). The wet gel is dried by the supercritical drying method after being applied on the substrate in forming the low refractivity layer of the laminated layers. © KIPO 2006 ...

PROCESS FOR FORMING AN ELECTROACTIVE LAYER

유기 전계 발광 소자 및 그의 제조 방법

... 본 발명의 유기 전계 발광 소자는 기재 상에 적어도, 제1 도전층과, 습식 성막법에 의해 형성된 전하 주입 수송층과, 발광층과, 제2 도전층이 적층되고, (1) 전하 주입 수송층은 제1 도전층에 접하는 전하 주입층을 포함하고, (2) 전하 주입 수송층의 막 두께가 130 내지 1000nm이며, (3) 전하 주입층이 가교된 방향족 아민 중합체를 포함한다. 기재는 유리 기재이며, 유리 기재의 제1 도전층측 표면의 파상 정접의 최솟값이 4.00×10-6 이상, 또는 파상 정접의 최댓값이 22×10-6 이상이다.

SLOT DIE HEAD FOR MULTILAYER ORGANIC THIN FILM COATING AND MANUFACTURING METHOD THEREOF

The present invention discloses a slot die head for a multilayer organic thin film coating and a manufacturing method thereof. The apparatus comprises: first side and second side main bodies which are plates having a cross section of a right trapezoid shape, and have a right angle part of a right trapezoid shape come in contact with the top part and have one side of a hypotenuse part come in contact at the bottom part to form a head lip; a die shim which includes a plurality of height difference patterns of a rectangular shape at the bottom side surface, and is inserted into the between the first side and the second side main bodies to discharge a coating liquid in a head lip direction through the height difference patterns; a cavity in which the coating liquid is charged is formed at the inside surface of the first side main body or the second side main body in a longitudinal direction, and thus the coating liquid is distributed in a width direction. According to the present invention, ...

INK FOR ACTIVE LAYER OF ORGANIC SOLAR CELL, ORGANIC SOLAR CELL, AND PROCESS FOR MANUFACTURE OF ORGANIC SOLAR CELL

DISPLAY DEVICE FOR ACCURATELY APPLYING ON ORGANIC EL MATERIAL

PURPOSE: A display device is provided to improve a manufacturing yield of the display device by accurately applying a polymer organic EL(Electro-Luminescent) material on a substrate without resulting in a position shift problem. CONSTITUTION: A display device includes an organic EL layer made of a pi conjugate-based polymer. A pixel unit(111), a source side driver circuit(112), and a gate side driver circuit(113) are formed on a substrate(110). Plural source wires, which are connected to the source side driver circuit, and plural gate wires, which are connected to the gate side driver circuit, enclose pixels. The pixel unit includes plural pixels, which are arranged in a matrix formation. Red light emitting layer solution(114a), green light emitting layer solution(114b), and blue light emitting layer solution(114c) are sprayed from a film applying unit in predetermined directions. © KIPO 2007 ...

METHOD FOR PREPARING ORGANIC SEMICONDUCTOR THIN FILM AND METHOD FOR FABRICATING ORGANIC FIELD-EFFECT TRANSISTOR INCLUDING SAME

The present invention provides a method for fabricating an organic field-effect transistor, comprising the steps of: (a) preparing an organic semiconductor solution where an organic semiconductor is solved and controlling organic semiconductor solution stirring time to manufacture the organic semiconductor solution of which the number of nucleated seeds of the organic semiconductor is controlled; (b) coating the organic semiconductor solution, of which the number of the nucleated seeds is controlled, on a substrate to manufacture an organic semiconductor solution/substrate; and (c) making the organic semiconductor solution of the organic semiconductor solution/substrate come into contact with vapor of a solvent and evaporating the solvent of the organic semiconductor solution to crystallize the organic semiconductor of the organic semiconductor solution, thereby manufacturing an organic semiconductor thin film including a condensed crystal formed by making a plurality of crystal grains, ...

METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND ELECTRONIC CIRCUIT USING SPRAY METHOD

The present invention relates to a method for manufacturing a thin film transistor and a method for manufacturing an electronic circuit having same, the method for manufacturing a thin film transistor through a spray printing method comprising: a step for preparing a substrate; a step for preparing a solution to be coated on the substrate; a step for coating the substrate with the prepared solution using a spray device; and a step for vaporizing the remaining solvent by executing a heat treatment after the coating step is completed. The present invention enables a thin film transistor having a large area to be coated through a very inexpensive and easy process.

OTFT using paper as substrate and silk protein as dielectric material and method for manufacturing the same

An organic thin film transistor (OTFT) using paper as a substrate and silk protein as a dielectric material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein, which is disposed on the paper substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.

Field effect-transistor, method for manufacturing same, wireless communication device using same, and product tag

The field-effect transistor is provided with at least: a substrate; a source electrode, a drain electrode and a gate electrode; a semiconductor layer that contacts the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode. The semiconductor layer contains carbon nanotubes, and the gate insulating layer contains a polymer in which inorganic particles are bonded. Provided are a field effect-transistor which has reduced leak current and enables uniform coating of a semiconductor solution, and a method for manufacturing the same.

Surface planarisation

This invention generally relates to planarisation of a surface of a substrate. In an embodiment of planarising a surface region of a substrate, the substrate having a body on a portion of said surface region, the method comprises: modifying the wetability of a surface of said body with respect to a liquid planariser composition by providing a surface modifying layer such as a self-assembled monolayer thereon; and then depositing the liquid planariser composition on said substrate and said body such that the planariser composition wets said surface region, wherein said surface modifying layer determines a contact angle of said liquid planariser composition to said surface of said body such that the deposited liquid planariser composition is repelled from said surface of said body.

Organic electro-luminescence apparatus and electronic equipment

This invention can provide an organic electro-luminescence apparatus, which has light-emitting characteristics being highly efficient and durable and in which gradation control is facilitated, and electronic equipment provided with the electro luminescence apparatus. The organic electro-luminescence apparatus can include light-emitting functional sections 7R, 7G, 7B formed between electrodes 4, 8, and is characterized by providing a plurality of functional layers 7R, 7G, 7B, forming the plural functional layers through phase separation only.

Organic thin film transistor and manufacturing method thereof

An organic thin film transistor and a manufacturing method thereof are provided. The organic thin film transistor includes, on a substrate, a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode and a drain electrode, wherein the organic semiconductor layer includes an organic semiconductor, and a resin (C) having one or more groups selected from a group consisting of a group having a fluorine atom, a group having a silicon atom, an alkyl group having one or more carbons (or an alkoxycarbonyl group having two or more carbons), a cycloalkyl group, an aralkyl group, an aryloxy carbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group. The manufacturing method of the organic thin film transistor coats a coating liquid containing the organic semiconductor and the resin (C) so as to unevenly distribute the resin (C).

Polymer, composition for organic electroluminescent element, organic electroluminescent element, organic el display device, organic el lighting, and manufacturing method for organic electroluminescent element

Provided are: a polymer that has a high hole-injection/transport capacity and that is highly durable; and a composition for an organic electroluminescent element that contains the polymer. The polymer has a repeating unit represented by formula (1) or a repeating unit represented by formula (2). In the formulas: Ar1 and Ar2 represent optionally substituted aromatic hydrocarbon groups or optionally substituted aromatic heterocyclic groups; X represents -C(R7)(R8)-, -N(R9)-, or -C(R11)(R12)-C(R13)(R14)-; R1 and R2 as well as R3 and R6 each independently represent an optionally substituted alkyl group; R4 and R5 each independently represent an optionally substituted alkyl group, an optionally substituted alkoxy group, or an optionally substituted aralkyl group; and R7 through R9 as well as R11 through R14 each independently represents hydrogen, an optionally substituted alkyl group, an optionally substituted aralkyl group, or an optionally substituted aromatic hydrocarbon group.

PROCESS FOR PRODUCING AN ORGANIC SEMICONDUCTOR LAYER CONSISTING OF A MIXTURE OF A FIRST AND A SECOND SEMICONDUCTOR

A method for manufacturing an organic semiconductor layer formed of a mixture of a first and of a second organic semiconductor materials includes the steps of: forming a porous solid volume formed of the first semiconductor material, of intercommunicating porosity and capable of receiving a second semiconductor material; depositing, at least on an external surface of the porous solid volume, a liquid including the second semiconductor material dissolved or dispersed in a solvent, the solvent being inert with respect to the first semiconductor material and having an evaporation temperature lower than the evaporation temperature of the second semiconductor material; and once the porous solid volume has been at least partially impregnated with the liquid, evaporating the solvent by heating up to a temperature higher than the evaporation temperature of said solvent and lower than the evaporation temperature of the first and of the second semiconductor materials. 1. A method for manufacturing an organic semiconductor layer formed of a mixture of a first and of a second organic semiconductor materials , the method comprising:forming a porous solid volume formed of the first semiconductor material, of intercommunicating porosity and capable of receiving a second semiconductor material;depositing, at least on an external surface of the porous solid volume, a liquid comprising the second semiconductor material dissolved or dispersed in a solvent, said solvent being inert with respect to the first semiconductor material and having an evaporation temperature lower than the evaporation temperature of the second semiconductor material; andonce the porous solid volume has been at least partially impregnated with the liquid, evaporating the solvent by heating up to a temperature higher than the evaporation temperature of said solvent and lower than the evaporation temperature of the first and of the second semiconductor materials,wherein the forming of the porous solid comprises ...

METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT

A method for manufacturing an organic electroluminescent element that includes an anode (), a cathode (), a layered structure placed between the anode and the cathode and formed by stacking a plurality of organic layers including an electron injection layer () provided in contact with the cathode, the method including the steps of: preparing a first component () in which either the anode alone is or both the anode and at least a part of the organic layers to make up the layered structure are provided on a first substrate (); preparing a second component () in which either the cathode alone is or both the cathode and the rest part to make up the layered structure excluding the part provided in the first component is provided on a second substrate (); and laminating the first component and the second component to form the layered structure placed between the anode and the cathode, in which the electron injection layer that contains an ionic polymer is formed in the step of preparing the first component or in the step of preparing the second component. 1. A method for manufacturing an organic electroluminescent element that comprises an anode , a cathode , a layered structure placed between the anode and the cathode and formed by stacking a plurality of organic layers including an electron injection layer provided in contact with the cathode , the method comprising the steps of:preparing a first component in which either the anode alone is or both the anode and at least a part of the organic layers to make up the layered structure is provided on a first substrate;preparing a second component in which either the cathode alone is or both the cathode and the rest part to make up the layered structure excluding the part provided in the first component are provided on a second substrate; andlaminating the first component and the second component to form the layered structure placed between the anode and the cathode,wherein the electron injection layer that comprises an ...

LOW CONTACT RESISTANCE ORGANIC THIN FILM TRANSISTORS

The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance. 130.-. (canceled)33. A semiconductor blend formulation according to claim 32 , wherein:{'sub': 'n', 'said semiconducting conjugated polymer is TFB [9,9′-dioctylfluorene-co-N-(4-butylphenyl)-diphenylamine];'}said small molecule semiconductor material is a compound of formula (VII) wherein A is selected from:{'sup': '11', 'a thiophene group that is fused with a phenyl group substituted with at least one group of formula X;'}{'sup': 11', '11', '11', '11, 'sub': n', '2n+1, 'a phenyl group that may be unsubstituted or substituted with at least one group of formula X, said phenyl group further optionally being fused with a thiophene group which can be unsubstituted or substituted with at least one group of formula Xand/or fused with a benzothiophene group, said benzothiophene group being unsubstituted or substituted with at least one group of formula X, wherein Xis a group of formula CHwherein n is 0 or an integer of from 1 to 16; and'}the ratio of said small molecule semiconductor material to said polymer material in said blend is from 80:20 to 60:40.36. A semiconductor blend formulation according to claim 35 , wherein each group Xis a hexyl group and the ratio of said small molecule semiconductor material to said polymer material is 70:30.37. A ...

ORGANIC LIGHT-EMITTING DIODE LUMINAIRES

There is provided an organic light-emitting diode luminaire. The luminaire includes a patterned first electrode, a second electrode, and a light-emitting layer therebetween. The light-emitting layer includes a first plurality of pixels having an emission color that is blue; a second plurality of pixels having an emission color that is green, the second plurality of pixels being laterally spaced from the first plurality of pixels; and a third plurality of pixels having an emission color that is red-orange, the third plurality of pixels being laterally spaced from the first and second pluralities of pixels. The additive mixing of all the emitted colors results in an overall emission of white light. 3. The luminaire of claim 2 , wherein:{'sup': '1', 'Ris H, D, F, or alkyl;'}{'sup': '2', 'Ris H, D or alkyl;'}{'sup': 3', '10', '10, 'sub': '2', 'R═H, D, F, alkyl, OR, NR;'}{'sup': '4', 'R═H or D;'}{'sup': '5', 'R═H, D or F;'}{'sup': '6', 'R═H, D, CN, F, aryl, fluoroalkyl, or diaryloxophosphinyl;'}{'sup': '7', 'R═H, D, F, alkyl, aryl, or diaryloxophosphinyl;'}{'sup': '8', 'R═H, D, CN, alkyl, fluoroalkyl;'}{'sup': '9', 'R═H, D, aryl, or alkyl;'}{'sup': 10', '10, 'R=alkyl, where adjacent Rgroups can be joined to form a saturated ring; and'}* represents a point of coordination with Ir.4. The luminaire of claim 2 , wherein the relative emission from blue claim 2 , green and red-orange colors claim 2 , as measured in cd/m claim 2 , is:blue emission=28-33%,green emission=32-37%, andred-orange emission=31-36%.6. The luminaire of claim 5 , wherein the relative emission from the blue claim 5 , green and red-orange colors claim 5 , measured in cd/m claim 5 , is:blue emission=20-25%,green emission=47-52%, andred-orange emission=27-32%.10. The luminaire of claim 9 , wherein:{'sup': 1', '4', '21', '26', '1', '2', '2', '3', '3', '4', '23', '24', '24', '25', '23', '24', '24', '25', '25', '26, 'Rthrough Rand Rthrough Rare the same or different and are H, D, alkyl, silyl, or alkoxy, or Rand ...

ORGANIC THIN-FILM TRANSISTORS

A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): 2. The method of claim 1 , wherein R claim 1 , R claim 1 , R claim 1 , and Rare hydrogen.3. The method of claim 1 , wherein at least one of R claim 1 , R claim 1 , R claim 1 , and Ris alkyl.4. The method of claim 1 , wherein the ethynylsilane is substituted with three alkyl groups.8. The method of claim 1 , wherein each X is sulfur.9. The method of claim 1 , wherein the semiconducting material has a weight average molecular weight of from about 2 claim 1 ,000 to about 200 claim 1 ,000.10. The method of claim 1 , wherein a and b are independently integers from 1 to about 5.11. The method of claim 1 , wherein the depositing comprises spin coating claim 1 , dip coating claim 1 , blade coating claim 1 , rod coating claim 1 , screen printing claim 1 , stamping claim 1 , or ink jet printing.12. The method of claim 1 , wherein the semiconducting layer has a thickness of from about 5 nm to about 1000 nm.13. The method of claim 1 , wherein the semiconducting layer has a thickness of from about 10 nm to about 100 nm.14. The method of claim 1 , wherein the substrate is composed of silicon claim 1 , glass plate claim 1 , plastic film claim 1 , or plastic sheet.15. The method of claim 1 , The method of claim 1 , wherein the substrate has a thickness of from about 10 micrometers to about 10 millimeters.16. The method of claim 1 , wherein the substrate has a thickness of from about 50 micrometers to about 5 millimeters.17. The method of claim 1 , wherein the substrate has a thickness of from about 0.5 to about 10 millimeters.18. The method of claim 1 , wherein the semiconducting material is of Formula (I).19. The method of claim 1 , wherein the semiconducting material is of Formula (II).20. The method of claim 1 , wherein the semiconducting layer further comprises another semiconducting material selected from the group consisting of an acene a perylene ...

TRANSPARENT CONTACTS ORGANIC SOLAR PANEL BY SPRAY

A method of fabricating organic solar panels with transparent contacts. The method uses a layer-by-layer spray technique to create the anode layer. The method includes placing the substrate on a flat magnet, aligning a magnetic shadow mask over the substrate, applying photoresist to the substrate using spray photolithography, etching the substrate, cleaning the substrate, spin coating a tuning layer on substrate, spin coating an active layer of P3HT/PCBM on the substrate, spray coating the substrate with a modified PEDOT solution, and annealing the substrate. 1. A method for fabricating an organic inverted solar photovoltaic cell , comprising the steps of:obtaining a substrate comprising a substrate coated with indium tin oxide;applying photoresist to a substrate by spray photolithography;forming an interstitial layer by spray coating a layer of on top of the indium tin oxide coating;forming an active layer by spray coating a layer of poly-3(hexylthiophene) and [6,6]-phenyl C61-butyric acid methylester disposed on the interstitial layer;forming an anodic layer by spray coating a layer comprising poly (3,4) ethylenedioxythiophene:poly-styrenesulfonate doped with 5 vol. % of dimethylsulfoxide, wherein the anodic layer is disposed on the active layer; andannealing the layers on the substrate.2. The method of claim 1 , wherein the interstitial layer is cesium carbonate claim 1 , zinc oxide (ZnO) claim 1 , or self-assembled molecules.3. The method of claim 1 , wherein the active layer is about 200 nm thick to about 500 nm thick4. The method of claim 1 , wherein the anodic layer is about 100 nm to about 1.26 μm thick.5. The method of claim 5 , wherein the anodic layer is about 500 nm thick claim 5 , about 1 μm thick claim 5 , 100 nm thick claim 5 , 500 nm thick claim 5 , or 1 μm thick.6. The method of claim 1 , further comprising encapsulating the organic inverted photovoltaic cell by applying a UV-cured epoxy encapsulant or silver paint to the edges of the cell.7. The ...

Hole transport compositions and related devices and methods (ii)

A composition comprising: at least one compound comprising a hole transporting core, wherein the core is covalently bonded to a first arylamine group and also covalently bonded to a second arylamine group different from the first, and wherein the compound is covalently bonded to at least one intractability group, wherein the intractability group is covalently bonded to the hole transporting core, the first arylamine group, the second arylamine group, or a combination thereof, and wherein the compound has a molecular weight of about 5,000 g/mole or less. Blended mixtures of arylamine compounds, including fluorene core compounds, can provide good film formation and stability when coated onto hole injection layers. Solution processing of OLEDs is a particularly important application.

DEVICE FOR SPRAYING, METHOD THEREFOR, AND ORGANIC ELECTRONIC CONSTRUCTION ELEMENT

The embodiments relate to a device and a method for spraying coatings of organic construction elements. The embodiments relate, in particular, to the spraying of coatings made up of components that do not dissolve in the same solvent, for example, and/or the spraying of a plurality of coatings one after the other. A plurality of spray heads is used, for example one after the other and/or next to one another. 110. An organic electronic device claims 5 , comprising a substrate claims 5 , a lower electrode and an organic active layer with an upper electrode over it the organic active layer claims 5 , the photoconductive organic layer being a photoconductive layer obtainable in the form of a bulk heterojunction by means of an apparatus according to the invention or a method according to to .spraying a sheet-like substrate with at least two different spraying agents being sprayed simultaneously onto a same surface area.211. An organic electronic device as claimed in claim claims 5 , wherein the at least two different spraying agents are prepared from solutions comprising at least two different solvents.311. An organic electronic device as claimed in claim claims 5 , wherein a first of the at least two spraying agents comprises at least one of P3HT claims 5 , MDMO-PPV and MEH-PPV and a second of the at least two spraying agents commprises PCBM.413. An organic electronic device as claimed in claim claims 5 , wherein PCBM has the form of at least one of [60]PCBM claims 5 , [70]PCBM claims 5 , [84]PCBM claims 5 , [60]ThCBM claims 5 , [60]PCB-A and [60]PCB-Cn.511. An organic electronic device as claimed in claim claims 5 , wherein the photoconductive layer comprises P3HT and PCBM and has a layer thickness between 50 nm and 1 mm.611. An organic electronic device as claimed in claim claims 5 , wherein the photoconductive layer is obtained from two spraying agents claims 5 , the first spraying agent being a solution of P3HT in chloroform and the second spraying agent being a ...

PERYLENE TETRACARBOXYLIC ACID BISIMIDE DERIVATIVE, N-TYPE SEMICONDUCTOR, A METHOD FOR PRODUCING N-TYPE SEMICONDUCTOR, AND ELECTRONIC DEVICE

The present invention provides a perylene tetracarboxylic acid bisimide derivative which enables the formation of an n-type semiconductor having high carrier mobility and has superior solubility. The perylene tetracarboxylic acid bisimide derivative is a perylene tetracarboxylic acid bisimide derivative represented by the following chemical formula (I), a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, 3. The perylene tetracarboxylic acid bisimide derivative according to claim 2 , where in the chemical formula (II) claim 2 ,m represents an integer from 0 to 20, andn represents an integer from 0 to 30;a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; ora salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.5. The perylene tetracarboxylic acid bisimide derivative according to claim 4 , where in the chemical formula (III) claim 4 ,Ar is an o-phenylene group, a m-phenylene group, a p-phenylene group, a 2,2′-biphenylene group, a 2,3′-biphenylene group, a 2,4′-biphenylene group, a 3,3′-biphenylene group, a 3,4′-biphenylene group, a 4,4′-biphenylene group, or a 2,5-thienylene group;a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; ora salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.6. The perylene tetracarboxylic acid bisimide derivative according to claim 4 , where in the chemical formula (III) claim 4 ,{'sup': 1', '2, 'in Land L, the linking group is a single bond, an alkylene group, an oxy group (—O—), a thio group (—S—), or a seleno group (—Se—);'}a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative; ora salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer.14. The perylene tetracarboxylic acid bisimide ...

METHODS OF FORMING STRUCTURES HAVING NANOTUBES EXTENDING BETWEEN OPPOSING ELECTRODES AND STRUCTURES INCLUDING SAME

A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed. 1. A method for forming a semiconductor device , comprising:removing portions of a flowable material, a dielectric material, and an electrode material from a semiconductor structure to form at least one recess therein;forming a catalyst material on opposing sidewalls of the electrode material within the at least one recess;exposing the catalyst material to a carbon-containing gas to form carbon nanotubes within the at least one recess, at least one of the carbon nanotubes extending from a particle of the catalyst material on a first of the opposing sidewalls of the electrode material to another particle of the catalyst material on a second of the opposing sidewalls, the at least one of the carbon nanotubes physically contacting the particle of the catalyst material and the another particle of the catalyst material; andsealing a mouth of the at least one recess.2. A semiconductor structure , comprising:at least one open volume at least partially defined by a lower ...

HYBRID AMBIPOLAR TFTS

The present invention relates inter alia to an electronic device, preferably a thin film transistor (TFT) comprising layers with n-type and p-type semi conducting materials, wherein the p-type layer comprises at least one organic hole transport material. Furthermore, the present invention relates to the use of the electronic device according to the invention in an electronic equipment selected from an RFID and backplanes for a display, electronic book and electronic paper, and an electronic equipment comprising an electronic device according to the invention. 15. An electronic device comprising arranged on a substrate ():{'b': 1', '2', '1', '2', '1', '2, '(a) a semiconductor body comprising a layer () which is either a n-type or a p-type layer, and a layer (), which is either a n-type or a p-type layer, wherein one of both layers () and () is a n-type and the other one a p-type layer in which the p-type layer (() or ()) comprises at least one organic hole transport material (HTM); and'}{'b': '4', '(b) a first electrode (); and'}{'b': '6', '(c) an insulating layer A () interposed between the semiconductor body and the first electrode;'}{'b': '3', '(d) a second electrode () which is in contact with the semiconductor body; and'}{'b': '7', '(e) a third electrode () which is in contact with the semiconductor body but is detached from the second electrode;'}characterized in that(1) the n-type layer comprises an inorganic n-type semiconductor material and the said at least one organic hole transport material has a lowest unoccupied molecule orbital (LUMO) at an energy level higher than −2.7 eV; and/or{'b': '8', '(2) the semiconductor body further comprises an insulating layer B () interposed between the n-type layer and the p-type layer.'}2. Electronic device according to claim 1 , characterized in that the organic p-type layer and/or the organic n-type layer is coated from solution.3. Electronic device according to claim 1 , characterized in that the n-type layer ...

PEROVSKITE LIGHT EMITTING DEVICE

A perovskite light emitting diode having degradation of the characteristics of the light emitting device, caused by PEDOT:PSS can be improved by replacing PEDOT:PSS contained in a conventional hole transport layer with an anionic conjugated polymer having ammonium-based counter ions, and the light emission characteristics can be greatly improved by passivating defects of a perovskite light emitting layer with a hole transport layer containing a conjugated polymer and increasing crystal growth. 2. The device of claim 1 , wherein a HOMO level of the hole transport layer is in a range of 5.0 to 6.0 eV.3. The device of claim 1 , wherein a difference between a LUMO level of the hole transport layer and a LUMO level of the perovskite light-emitting layer is 0.3 eV or greater.4. The device of claim 1 , wherein a contact angle of water on a surface of the hole transport layer is 10° or greater.5. The device of claim 1 , wherein a thickness of the perovskite light-emitting layer is 500 nm or smaller.6. The device of claim 1 , wherein the hole transport layer is subjected to post-treatment using electrical stress applied in a driving direction of the perovskite light-emitting device.7. The device of claim 1 , wherein the perovskite light-emitting device is encapsulated and then aged for at least 12 hours in a nitrogen atmosphere at room temperature.8. The device of claim 2 , wherein a HOMO level of the hole transport layer is in a range of 5.60 to 6.0 eV.10. The device of claim 9 , wherein a HOMO level of the hole transport layer is in a range of 5.0 to 6.0 eV.11. The device of claim 9 , wherein a difference between a LUMO level of the hole transport layer and a LUMO level of the perovskite light-emitting layer is 0.3 eV or greater.12. The device of claim 9 , wherein a contact angle of water on a surface of the hole transport layer is 10° or greater.13. The device of claim 9 , wherein a thickness of the perovskite light-emitting layer is 500 nm or smaller.14. The device of ...

Dispensing apparatus and dispensing method

A dispensing apparatus includes a dispensing unit having a main body, a channel through the main body, and a plurality of nozzles connected to the main body, the plurality of nozzles being configured to dispense fluid flowing in the channel, a gap sensor unit configured to determine size of gaps between adjacent nozzles in the dispensing unit, and a thermal expansion adjusting unit configured to thermally expand or contract the main body of the dispensing unit to adjust the gap size between adjacent nozzles to a predetermined size, based on the gap size determined by the gap sensor unit.

METHOD FOR MANUFACTURING LARGE-AREA ORGANIC SOLAR CELLS

A method for manufacturing large-area organic solar cells utilizes a hot solvent vapor annealing manufacturing process while manufacturing the organic solar cells via a large-area proceeding method, such as spraying. Namely, a heated solvent vapor is utilized to modify an active layer after the active layer of the organic solar cells is formed, which ensures a flatness and an uniformity thereof and increases a crystallinity of the active layer and an element charge transport rate so that a power conversion efficiency of the large area organic solar cells is increased, a proceeding time is quite short, and the performance thereof is quite obvious. Therefore, the method not only reduces the cost by a large area production but obtains organic solar cells with higher conversion efficiency. 1. A method for manufacturing large-area organic solar cells comprising steps of:mixing and setting an electron donor material and an electron acceptor material on a transparent conductive substrate for forming an active layer;heating a solvent into a hot solvent vapor, which allows said active layer to be annealed in said hot solvent vapor, said hot solvent vapor moistening and modifying a surface morphology of said active layer;thermal annealing said active layer;moving said active layer out of an environment where said hot solvent vapor is settled, and desiccating said embellished active layer; andsetting an electrode layer on said active layer.2. The method as claimed in claim 1 , wherein in said step for forming said active layer claim 1 , said electron donor material and said electron acceptor material are mixed and set on said transparent conductive substrate via spraying claim 1 , knife coating claim 1 , roll-to-roll web-coating claim 1 , dip coating claim 1 , ink jet printing claim 1 , screen printing claim 1 , or lithographing3. The method as claimed in claim 1 , wherein said electron donor material is poly (3-hexyl-thiophene-2 claim 1 ,5-diyl) claim 1 , and said electron ...

ANILINE DERIVATIVE AND USE THEREOF

An aniline derivative represented by the formula, for instance, has good solubility in organic solvents, and when a thin film comprising such derivative as a charge-transporting substance is used in a hole injection layer, an organic EL element having excellent luminance characteristics can be obtained. 2. The aniline derivative of claim 1 , wherein Rto Rare all hydrogen atoms.4. The aniline derivative of claim 1 , wherein the Armoieties are all identical groups claim 1 , exclusive of groups having formula (A5).5. A charge-transporting substance consisting of the aniline derivative of .6. A charge-transporting material comprising the charge-transporting substance of .7. A charge-transporting varnish comprising the charge-transporting substance of and an organic solvent.8. The charge-transporting varnish of which further comprises a dopant substance.9. The charge-transporting varnish of claim 8 , wherein the dopant substance comprises a halotetracyanoquinodimethane compound.10. The charge-transporting varnish of claim 9 , wherein the dopant substance further comprises a heteropolyacid.11. A charge-transporting thin-film produced using the charge-transporting varnish of .12. An electronic device comprising the charge-transporting thin-film of .13. An organic electroluminescent device comprising the charge-transporting thin-film of .14. A method of producing a charge-transporting thin-film claim 7 , which method is characterized by comprising the step of coating a substrate with the charge-transporting varnish of and evaporating off the solvent. This invention relates to an aniline derivative and to the use thereof.Charge-transporting thin-films made of organic compounds are used as emissive layers and charge injection layers in organic electroluminescence (EL) devices. In particular, a hole injection layer is responsible for transferring charge between an anode and a hole-transporting layer or an emissive layer, and thus serves an important function in achieving low- ...

Organic electroluminescent device and manufacturing method thereof, and display apparatus

The invention provides an organic electroluminescent device and a manufacturing method thereof, and a display apparatus. The method for manufacturing the organic electroluminescent device of the invention includes using the following to form at least one function layer: preparing a solution of a material of the function layer, and forming a liquid material layer for the function layer using the solution of the material of the function layer; performing a vacuum drying on the liquid material layer for the function layer to form function layer. In the invention, a relatively dense film is formed by performing a vacuum drying on the function layer, and the residual organic solvent is effectively removed to avoid the formation of defects, so that the film becomes smooth and dense, which increases the carrier mobility in the film and is advantageous to the transport and recombination of electrons and holes.

Organic electronic devices with multiple solution-processed layers

A method for fabricating an organic light emitting device stack involves depositing a first conductive electrode layer over a substrate; depositing a first set of one or more organic layers, wherein at least one of the first set of organic layers is a first emissive layer and one of the first set of organic layers is deposited by a solution-based process that utilizes a first solvent; depositing a first conductive interlayer by a dry deposition process; and depositing a second set of one or more organic layers, wherein at least one of the second set of organic layers is a second emissive layer and one of the second set of organic layers is deposited by a solution-based process that utilizes a second solvent, wherein all layers that precede the layer deposited using the second solvent are insoluble in the second solvent.

GRAPHENE-SEMICONDUCTOR BASED WAVELENGTH SELECTIVE PHOTODETECTOR FOR SUB-BANDGAP PHOTO DETECTION

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected. 1. A method of manufacturing a graphene semiconductor photodetector , the method comprising:providing a monolayer chemical vapor deposition (“CVD”) of graphene on a metal;spin-coating a poly(methyl methacrylate) (PMMA) solution in anisole onto the graphene layer and air drying it;removing the metal on the reverse side of the graphene by etching;separating the released graphene on PMMA film and rinsing the film consecutively in a plurality of clean deionized (“DI”) water baths;placing the film onto a clean substrate and air drying it;dissolving the PMMA with a solvent;patterning the graphene into a ribbon with e-beam lithography and oxygen;depositing silver (Ag) in a thermal evaporator on the e-beam lithography in a defined central area of the graphene ribbon;{'sub': 2', '2', '2, 'transforming the Ag into one of AgCl, AgBr, and AgI by a reaction with Cl, Br, or I, respectively;'}{'sub': 2', '3, 'after the transformation of the Ag, coating AlOby atomic layer deposition (ALD) onto the structure;'}{'sub': 2', '3, 'removing the AlOon the contact area by dipping it in a buffered HF solution (BHF), and patterning a nickel (Ni) electrode on the graphene ribbon with e-beam lithography followed by metal sputtering; and'}cleaning the PMMA.2. The method of wherein the step of spin-coating is carried out at 4 claim 1 ,000 rpm for 1 minute with a 7 wt. % PMMA solution.3. The method of wherein the step of removing the metal on the reverse side of the graphene by etching is carried out with an oxygen reactive ion etching (RIE) ...

ORGANIC SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF, COMPOUND, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND MANUFACTURING METHOD THEREOF

Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film. 5. The organic semiconductor element according to claim 4 , further comprising:{'sup': '−1', 'a gate insulating film having a surface energy of 50 to 75 mNm.'}6. The organic semiconductor element according to claim 1 , that is an organic thin film transistor.10. The compound according to claim 7 , that is an organic semiconductor compound.11. An organic semiconductor composition comprising:{'claim-ref': {'@idref': 'CLM-00007', 'claim 7'}, 'the compound according to , and'}a solvent.13. An organic semiconductor film comprising the compound according to .15. A method of manufacturing an organic semiconductor film claim 7 , comprising:{'claim-ref': {'@idref': 'CLM-00011', 'claim 11'}, 'a coating step of coating a substrate with the organic semiconductor composition according to .'}16. A method of manufacturing an organic semiconductor film claim 7 , comprising:{'sup': '−1', 'claim-ref': {'@idref': 'CLM-00012', 'claim 12'}, 'a coating step of coating a gate insulating film having a surface energy of 50 to 75 mNmwith the organic semiconductor composition according to .'}17. A method of manufacturing an organic semiconductor element claim 7 , comprising:{'claim-ref': {'@idref': 'CLM-00011', 'claim 11'}, 'a coating step of coating a substrate with the organic semiconductor composition according to .'}18. A method of manufacturing an ...

Novel compound and use thereof as a hole transport material

The present invention provides novel triazatruxene derivatives that are useful as hole transport materials (HTM), particularly, in optoelectronic devices. The utility of the novel compounds was confirmed in solid-state, sensitized solar cells based on organic-inorganic perovskites used as light harvesters. The devices achieved high power conversion efficiencies.

Crystalline perovskite thin films and devices that include the films

Hybrid organic-inorganic perovskite thin films with average grain sizes of at least 50 micrometers were prepared and employed in solar cells. The PCE values of the solar cells did not degrade with the direction or the scan-rate of the applied voltage. The larger average grain sizes are believed to assist in reducing the influence of defect states on carrier recombination. The tunability of PCE with substrate temperature may be correlated to the quality of the crystalline perovskite formed using the hot-casting procedure. The larger average grain sizes lead to good crystalline quality, low defect density, and high carrier mobility. The process for growing hybrid organic-inorganic perovskites may be applicable to the preparation of other materials to overcome problems related to polydispersity, defect formation, and grain boundary recombination.

Carbon dot multicolor phosphors

Carbon dots synthesized from p-phenylenediamine in diphenyl ether exhibit excitation wavelength independent long wavelength multicolor emissions (green to red) when they are dispersed in different solvents and polymers. The emissions are excitation wavelength independent and one excitation light can excite all the colors.

POLYMER, COMPOSITION FOR ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC EL DISPLAY DEVICE, ORGANIC EL LIGHTING, AND MANUFACTURING METHOD FOR ORGANIC ELECTROLUMINESCENT ELEMENT

Provided are: a highly durable polymer having a high hole-injection/transport capacity; and a composition for an organic electroluminescent element, which contains the polymer. The polymer contains a repeating unit represented by the following Formula (1) or a repeating unit represented by the following Formula (2) (wherein, Arand Areach represent an aromatic hydrocarbon group optionally having a substituent, or an aromatic heterocyclic group optionally having a substituent; X represents —C(R)(R)—, —N(R)—, or —C(R)(R)—C(R)(R)—; Rand Ras well as Rand Reach independently represent an alkyl group optionally having a substituent; Rand Reach independently represent an alkyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an aralkyl group optionally having a substituent; and Rto Rand Rto Reach independently represent hydrogen, an alkyl group optionally having a substituent, an aralkyl group optionally having a substituent, or an aromatic hydrocarbon group optionally having a substituent). 2. The polymer according to claim 1 , whereinthe polymer comprises the repeating unit represented by Formula (1), and{'sup': '1', 'at least one Aris a 2-fluorenyl group optionally having a substituent.'}6. The polymer according to claim 4 , wherein at least one Aris a 2-fluorenyl group optionally having a substituent.8. The polymer according to claim 7 , wherein{'sup': '4', 'Arin Formula (4) is the repeating unit represented by Formula (5) wherein k is 1, and'}the repeating unit represented by Formula (5) is linked with N in Formula (4).11. The polymer according to claim 10 , wherein Formula (15) or (16) has a substituent that is at least one selected from substituents Z and a crosslinkable group.Substituents Z: an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryloxy group, a heteroaryloxy group, an alkoxycarbonyl group, a dialkylamino group, a diarylamino group, an arylalkylamino group, an acyl group, a halogen atom, ...

ORGANIC MOLECULES FOR OPTOELECTRONIC DEVICES

The invention relates to an organic compound, in particular for the application in optoelectronic devices. According to the invention, the organic compound has 115.-. (canceled)17. The organic molecule according to claim 16 , wherein at each occurrence R claim 16 , Rand Ris independently from each selected from the group consisting of H claim 16 , methyl claim 16 , mesityl claim 16 , tolyl claim 16 , and phenyl.18. The organic molecule according to claim 16 , wherein Rand Ris independently from each other at each occurrence selected from the group consisting of H claim 16 , methyl claim 16 , and phenyl.19. The organic molecule according to claim 17 , wherein Rand Ris independently from each other at each occurrence selected from the group consisting of H claim 17 , methyl claim 17 , and phenyl.20. The organic molecule according to claim 16 , wherein Ris at each occurrence independently from another selected from the group consisting ofH,Me,{'sup': 'i', 'Pr,'}{'sup': 't', 'Bu,'}CN,{'sub': '3', 'CF,'}{'sup': i', 't, 'sub': '3', 'phenyl (Ph), which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me, Pr, Bu, CN, CF, and Ph,'}{'sup': i', 't, 'sub': '3', 'pyridinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me, Pr, Bu, CN, CF, and Ph,'}{'sup': i', 't, 'sub': '3', 'pyrimidinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me, Pr, Bu, CN, CF, and Ph,'}{'sup': i', 't, 'sub': '3', 'carbazolyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me, Pr, Bu, CN, CF, and Ph,'}{'sup': i', 't, 'sub': 3', '2, 'triazinyl, which is optionally substituted with one or more substituents independently from each other selected from the group consisting of Me, Pr, Bu, ...

PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL, AND COMPOUND

A photoelectric conversion element includes, at least: a conductive support; a photosensitive layer that contains a light absorbing agent; a hole transport layer that contains a hole transporting material; and a second electrode, in which at least one of the photosensitive layer or the hole transport layer is provided on the conductive support to constitute a first electrode in combination with the conductive support, and in which the hole transport layer contains a compound Q having at least one structure M represented by Formula 1 as the hole transporting material, provided that in a case where the compound Q has two or more of the structures M, the two or more structures M may be the same as or different from each other. 4. The photoelectric conversion element according to claim 3 ,{'sub': '2', 'wherein Din Formula 3 represents a divalent fused ring group containing at least one aromatic ring or a divalent fused ring group containing at least one aromatic hetero ring.'}5. The photoelectric conversion element according to claim 1 ,{'sub': '1', 'wherein the at least one Xis an oxygen atom.'}6. The photoelectric conversion element according to claim 3 ,{'sub': '1', 'wherein the at least one Xis an oxygen atom.'}7. The photoelectric conversion element according to claim 4 ,{'sub': '1', 'wherein the at least one Xis an oxygen atom.'}8. The photoelectric conversion element according to claim 1 ,{'sub': '1', 'wherein the at least one Zis a sulfur atom.'}9. The photoelectric conversion element according to claim 3 ,{'sub': '1', 'wherein the at least one Zis a sulfur atom.'}10. The photoelectric conversion element according to claim 4 ,{'sub': '1', 'wherein the at least one Zis a sulfur atom.'}11. The photoelectric conversion element according to claim 1 ,{'sub': '1', 'wherein the at least one Yis a sulfur atom.'}12. The photoelectric conversion element according to claim 3 ,{'sub': '1', 'wherein the at least one Yis a sulfur atom.'}13. The photoelectric conversion ...

METHOD OF FORMING CONDUCTIVE POLYMER THIN FILM PATTERN

Disclosed is a method of forming a conductive polymer thin film pattern, including (a) Coating substrate with solution including PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)) to form coating layer including solution on substrate, (b) irradiating a predetermined portion of the coating layer with light, thus manufacturing a pre-patterned substrate including PEDOT:PSS patterned on the predetermined portion and the coating layer other than the predetermined portion, and (c) removing the coating layer from the pre-patterned substrate, thus manufacturing a conductive polymer thin film having a PEDOT:PSS pattern. When the pattern formation method of the invention is applied, a pattern can be formed by directly irradiating a PEDOT:PSS solution with a laser, there is no need for additional drying, thus simplifying the processing and reducing the processing time, and a thin film for use in a transparent electrode can be manufactured, thereby improving the conductivity, transmittance, flatness and precision of the electrode. 1. A method of forming a conductive polymer thin film pattern , comprising:(a) coating a substrate with a solution including PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)), thus forming a coating layer including the solution on the substrate;(b) irradiating a predetermined portion of the coating layer with light, thus manufacturing a pre-patterned substrate including PEDOT:PSS patterned on the predetermined portion and the coating layer other than the predetermined portion; and(c) removing the coating layer from the pre-patterned substrate, thus manufacturing a conductive polymer thin film having a PEDOT:PSS pattern.2. The method of claim 1 , wherein the light includes at least one selected from among a laser claim 1 , a multi-wavelength lamp claim 1 , a xenon lamp claim 1 , a single-wavelength lamp claim 1 , a monochromator claim 1 , a flash lamp claim 1 , and an optical tool using the laser claim 1 , the multi ...

Organic Light-Emitting Device and Manufacturing Method Therefor

The present specification relates to an organic light emitting device comprising a first electrode; a second electrode provided opposite to the first electrode; and one or more organic material layers comprising a hole injection layer provided between the first electrode and the second electrode, wherein the hole injection layer comprises a first host, a second host and a dopant, and the first host and the second host have a HOMO energy level value difference of 0.2 eV or greater. 1. An organic light emitting device comprising:a first electrode;a second electrode provided opposite to the first electrode; andan organic material layer comprising a light emitting layer provided between the first electrode and the second electrode and a hole injection layer provided between the light emitting layer and the first electrode,wherein the hole injection layer i-comprises a first host, a second host and a dopant; andthe first host and the second host have a HOMO energy level value difference of 0.2 eV or greater.2. The organic light emitting device of claim 1 , wherein claim 1 , as for the first host and the second host in a hole only device (HOD) structure comprising only a first electrode formed with indium tin oxide (ITO) claim 1 , a hole injection layer claim 1 , and a second electrode formed with Al and the hole injection layer having a thickness of 500 Å claim 1 , a difference between a current density value at 2 V or 3 V when the hole injection layer comprises the first host and a current density value at 2 V or 3 V when the hole injection layer comprises the second host is 200 mA/cmor greater.3. The organic light emitting device of claim 1 , wherein a difference between a HOMO energy level value of one or more of the first host and the second host and a LUMO energy level value of the dopant is 0.5 eV or less.4. The organic light emitting device of claim 1 , wherein the organic material layer further comprises a hole transfer layer claim 1 , and a difference between a ...

Coating method, display substrate and manufacturing method thereof, and display device

Provided are a coating method, a display substrate and a manufacturing method thereof, and a display device. The coating method includes: forming a micro-fluid channel on a first surface of a first substrate, wherein the first surface is a surface to be coated of the first substrate, and a sidewall of the micro-fluid channel is the first surface of the first substrate; immersing one end of the micro-fluid channel into ink, to enable the ink to fill the micro-fluid channel; and drying the ink filling the micro-fluid channel to form a thin film on the first surface of the first substrate. The present disclosure can help implement uniform film formation of a quantum dot light-emitting layer at a high resolution, reduce the process difficulty of a high-resolution product and improve the device performance and the display performance.

ORGANIC RARE EARTH SOLID MICELLE, PREPARATION METHOD THEREFOR, AND METHOD FOR INCREASING PHOTOELECTRIC CONVERSION EFFICIENCY OF SOLAR BATTERY

Provided are an organic rare-earth solid micelle, a preparation method therefor, and a method for increasing the photoelectric conversion efficiency of a solar battery. A small organic conjugated ligand is taken as a first ligand, an amphiphilic diblock polymer is taken as a second ligand, and the first ligand and the second ligand are mixed and doped with a rare-earth chloride solution, and self-assembled to form an organic rare-earth solid micelle, whereby the fluorescence emission intensity and the fluorescence efficiency of the rare-earth element are improved. Next, the prepared organic rare-earth solid micelle is spin coated on an ITO layer of a solar battery, to prepare a solar battery with the organic rare-earth solid micelle. Therefore the sunlight absorption of a cell is increased, and the photoelectric conversion efficiency is improved. The preparation process is simple, low in cost, high in photoelectric conversion efficiency, and environmentally friendly. 1. A method for preparing an organic rare-earth solid micelle , comprising: taking a small organic conjugated ligand as a first ligand and an amphiphilic diblock polymer as a second ligand , mixing and doping the first ligand and the second ligand with a rare-earth chloride solution , and self-assembling to form an organic rare-earth solid micelle;wherein the amphiphilic diblock polymer is polymethyl methacrylate-b-polyacrylic acid (PMMA-b-PAA),the molar ratio of the small organic conjugated ligand:rare-earth chloride:amphiphilic diblock polymer is 3:1:1,wherein the small organic conjugated ligand:rare-earth chloride:amphiphilic diblock polymer are subjected to complexation reaction for 5-10 hrs in an oil bath at 50-70° C., to obtain a solution of an organic rare-earth solid micelle that is a complex having a size of 10-20 nm.2. (canceled)3. The preparation method according to claim 1 , wherein the polymethyl methacrylate-b-polyacrylic acid (PMMA-b-PAA) useful as the amphiphilic diblock polymer is ...

CROSS-LINKABLE ORGANOMETALLIC LIGHT EMITTING LIGANDS AND COMPLEXES

A 1, 4 bidentate ligand comprising first and second ligand centres, 1. A 1 , 4 bidentate ligand comprising first and second ligand centres ,{'sup': '2', 'wherein the first ligand centre is an sp-hybridised carbon or a nitrogen atom;'}{'sup': '1', 'wherein the second ligand centre is a nitrogen atom in a five- or six-membered aromatic or hetero-aromatic ring, said ring having a substantially linear substituent Tmeta or para to the nitrogen atom;'}{'sup': '1', 'claim-text': {'br': None, 'sup': 1', '1', '2', '2', '2, 'sub': a', 'b', 'c', 'd, '—Ar—Y—Ar—[Y—Ar]—S—B\u2003\u2003(1)'}, 'wherein Thas the formula 1{'sup': 1', '1', '1, 'and wherein Tis attached to the ring by X, wherein Xis a bond, a methylene group, a substituted methylene group, an oxygen atom or a sulphur atom,'}{'sup': 1', '2, 'sub': 6', '20', '4', '20, 'wherein each Arand Arare independently selected from the group of Cto Caromatic and Cto Cheteroaromatic groups,'}{'sup': 1', '2, 'sub': '2', 'wherein Yand each Yis independently an optionally substituted Cor acetonitrile trans double-bond linking moiety,'}wherein a is 0, 1, 2 or 3,wherein b is 0, 1 or 2,wherein each c is independently 0, 1 or 2,wherein d is 0, 1, 2, 3 or 4,S is a flexible spacer, andB represents a moiety having one or more cross-linkable functionalities.2. The 1 claim 1 , 4 bidentate ligand of claim 1 , wherein b is 1 or 2.3. The 1 claim 1 , 4 bidentate ligand of claim 1 , wherein each Arand Arare aromatic diradicals independently selected from the group consisting of 1 claim 1 ,4-phenylene claim 1 , naphthalene-1 claim 1 ,4-diyl claim 1 , naphthalene-2 claim 1 ,6-diyl claim 1 , perylene-3 claim 1 ,10-diyl claim 1 , pyrene-2 claim 1 ,7-diyl claim 1 , fluorene-2 claim 1 ,7-diyl claim 1 , fluorene-3 claim 1 ,6-diyl claim 1 , 9 claim 1 ,9-dialkylfluorene-2 claim 1 ,7-diyl claim 1 , 9 claim 1 ,9-dialkylfluorene-3 claim 1 ,6-diyl claim 1 , 9-(1′-alkylidiene)fluorene-2 claim 1 ,7-diyl claim 1 , 2 claim 1 ,5-dialkoxybenzene-1 claim 1 ,4-diyl claim ...

MANUFACTURING METHOD OF THE ORGANIC SOLAR CELL

The invention relates to a manufacturing method of an organic solar cell. First deposit in order a first electrode and a first transmission layer on a substrate. Then coat a photoresist layer having a preferred thickness ranging from 1000 nm to 1600 nm on the surface of the first transmission layer by a spin coater at a preferred spin-coating speed ranging from 3000 rpm and 6000 rpm for 30 seconds. Then develop an area by a photolithograph process, and coat an organic active layer in the area and on the surface of the photoresist layer by use of the spin coater at a preferred spin-coating speed ranging from 500 rpm and 800 rpm, in which the organic active layer has a thickness ranging from 230 nm to 320 nm at 500 rpm. Final deposit a second transmission layer and a second electrode on the organic active layer to obtain the organic solar cell. 1. A manufacturing method for an organic solar cell comprising the steps of:step one: depositing in order a first electrode and a first transmission layer on a substrate;step two: coating a photoresist layer having a preferred thickness ranging from 1000 nm to 1600 nm on the surface of the first transmission layer by use of the spin coater at a preferred spin-coating speed ranging from 3000 rpm to 6000 rpm for 30 seconds;step three: developing an area by a photolithograph process;step four: coating an organic active layer in the area and on the surface of the photoresist layer by use of the spin coater at a preferred spin-coating speed ranging from 500 rpm to 800 rpm, in which the organic active layer has a thickness ranging from 230 nm to 320 nm at 500 rpm, andstep five: depositing in order a second transmission layer and a second electrode on the organic active layer to obtain the organic solar cell.2. The method as claimed in claim 1 , wherein the current density of the organic solar cell is between 9 and 12 mA/cm.3. The method as claimed in claim 1 , wherein the device efficiency of the organic solar cell is between 3.17% ...

ORGANIC SEMICONDUCTOR FORMULATIONS

The present teachings relate to organic semiconductor formulations including an organic semiconducting compound in a liquid medium, where the liquid medium includes (1) a compound in liquid state that has electronic properties complementary to the electronic structure of the organic semiconducting compound and optionally (2) a solvent or solvent mixture for solubilizing the organic semiconducting compound. The present formulations can be used as inks in the fabrication of organic semiconductor devices. 1. An organic semiconductor formulation comprising a p-type organic semiconducting compound in a liquid medium , wherein the p-type organic semiconducting compound is selected from the group consisting of an oligothiophene , a thienocoronene , and a thienoacene; and the liquid medium consists essentially of a first liquid and optionally a second liquid , the first liquid being an electron-poor liquid comprising an aromatic compound having either (i) at least one electron-withdrawing functional group (FG) as a substituent , (ii) an electron-poor aromatic core , or both (i) and (ii) , and is in liquid state at about 1 atm at a temperature of 50° C. or less; and the second liquid being selected from the group consisting of petroleum ethers , acetonitrile , benzene , toluene , o-xylene , m-xylene , p-xylene , cyclohexylbenzene , 1-methyl naphthalene , 2-methylnaphthalene , 1-ethyl naphthalene , 2-ethylnapthalene , 1 ,2 ,4-trimethylbenzene , mesitylene , tetraline , indane , indene , acetone , methyl ethyl ketone , tetrahydrofuran , dioxane , bis(2-methoxyethyl) ether , diethyl ether , di-isopropyl ether , t-butyl methyl ether , methyl acetate , ethyl acetate , methyl formate , ethyl formate , isopropyl acetate , butyl acetate , cyclopentanone , cyclohexanone , and 2-methypyrrolidone.3. The formulation of claim 2 , wherein the electron-poor liquid is an aromatic compound having a core selected from the group consisting of benzene claim 2 , naphthalene claim 2 , and ...

ANILINE DERIVATIVE AND USE THEREOF

An aniline derivative represented by the formula, for instance, has good solubility in organic solvents, and when a thin film comprising such derivative as a charge-transporting substance is used in a hole injection layer, an organic EL element having excellent luminance characteristics can be obtained. 2. The aniline derivative of claim 1 , wherein Rto Rare all hydrogen atoms.3. The aniline derivative of claim 1 , wherein each Aris independently a group having any of formulas (A1) to (A12).4. The aniline derivative of claim 3 , wherein each Aris independently a group having any of formulas (A1) to (A3) claim 3 , (A5) to (A7) and (A10) to (A12).5. The aniline derivative of claim 1 , wherein the Armoieties are all identical groups.6. A charge-transporting substance consisting of the aniline derivative of .7. A charge-transporting material comprising the charge-transporting substance of .8. A charge-transporting varnish comprising the charge-transporting substance of and an organic solvent.9. The charge-transporting varnish of which further comprises a dopant substance.10. The charge-transporting varnish of claim 9 , wherein the dopant substance comprises a halotetracyanoquinodimethane compound.11. The charge-transporting varnish of claim 10 , wherein the dopant substance further comprises a heteropolyacid.12. A charge-transporting thin-film produced using the charge-transporting varnish of .13. An electronic device comprising the charge-transporting thin-film of .14. An organic electroluminescent device comprising the charge-transporting thin-film of .15. A method of producing a charge-transporting thin-film claim 8 , which method is characterized by comprising the step of coating a substrate with the charge-transporting varnish of and evaporating off the solvent. This invention relates to an aniline derivative and to the use thereof.Charge-transporting thin-films made of organic compounds are used as emissive layers and charge injection layers in organic ...

FLOATING EVAPORATIVE ASSEMBLY OF ALIGNED CARBON NANOTUBES

High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate. 1. A method of forming a film of aligned s-SWCNTs on a substrate , the method comprising:(a) partially submerging a hydrophobic substrate in an aqueous medium;(b) applying a dose of a liquid solution to the aqueous medium, the liquid solution comprising semiconductor-selective-polymer-wrapped s-SWCNTs dispersed in an organic solvent, whereby the liquid solution spreads into a layer on the aqueous medium at an air-liquid interface and semiconductor-selective-polymer-wrapped s-SWCNTs from the layer are deposited as a stripe of aligned semiconductor-selective-polymer-wrapped s-SWCNTs on the hydrophobic substrate; and(c) at least partially withdrawing the hydrophobic substrate from the aqueous medium, such that the portion of the hydrophobic substrate upon which the stripe of aligned semiconductor-selective-polymer-wrapped s-SWCNTs is deposited is withdrawn from the air-liquid interface.2. The method of claim 1 , further comprising repeating steps (b) and (c) in sequence one or more times to deposit one or more additional stripes of aligned semiconductor-selective-polymer-wrapped s-SWCNTs on the hydrophobic substrate.3. The method of claim 1 , further comprising removing the semiconductor-selective polymer from the aligned semiconductor-selective-polymer-wrapped s-SWCNTs.4. The method of claim 1 , wherein the semiconductor-selective-polymer-wrapped s-SWCNTs in the stripe have a degree of alignment of about ±15° or better.5. The method of claim 1 , ...

SOLUTION-PROVIDING APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY USING THE APPARATUS

A solution-providing apparatus and method of manufacturing organic light-emitting diode (OLED) display using the apparatus are disclosed. In one aspect, the apparatus comprises a storage unit, a spraying unit, a pipe, an emission-inducing unit, and a spectrometer. The storage unit is configured to store the solution that includes a light emissive material. The spraying unit is configured to spray the solution toward the substrate. The pipe interconnects the storage unit and the spraying unit. The emission-inducing unit is configured to excite the light emissive material of the solution that flows through the pipe so as to emit light from the solution. The spectrometer is configured to measure the wavelength and intensity of the light. 1. A method of manufacturing an organic light-emitting diode (OLED) display , the method comprising:forming a first electrode in each of a plurality of pixel areas, wherein the pixel areas are defined on a substrate;depositing a solution that includes a light emissive material onto the first electrode;exciting the light emissive material of the solution so as to emit light from the solution before depositing the solution onto the first electrode;measuring the wavelength and intensity of the emitted light; 'forming a second electrode over the organic emission layer.', 'curing the solution so as to form an organic emission layer over the first electrode; and'}2. The method of claim 1 , further comprising:determining the concentration of the solution; andcontrolling the amount of the solution provided onto the first electrode based on the determined concentration.3. The method of claim 2 , further comprising:comparing the intensity of the light to a preset value; andincreasing the amount of the solution when the determined concentration is lower than a predetermined concentration.4. The method of claim 1 , wherein the excitation includes irradiation of light that causes the light to be emitted from the solution.5. The method of claim 4 , ...

MASK-STACK-SHIFT METHOD TO FABRICATE ORGANIC SOLAR ARRAY BY SPRAY

An all-spray fabrication method for large scale inverted organic solar array is provided. Zinc oxide sol gel solutions and revised layers shorten the fabrication process from 2 days to 5 hours and concurrently improve transparency and visual effect of solar windows, and improve power conversion efficiency over 2× compared to previous devices, due to enhanced device characteristics like increased shunt resistance and fill factor. The method also eliminates human factors such as manual erasing of active layer to make series connections by providing a complete solution processable manufacturing process. The semi-transparency of the solar module allows for applications on windows and windshields. The inventive modules are more efficient than silicon solar cells in artificial light environments, significantly expanding their use in indoor applications. Additionally, these modules can be integrated into soft fabrics such as tents, military back-packs or combat uniforms, providing a highly portable renewable power supply for deployed military forces. 1. A method of manufacturing an organic solar photovoltaic cell; comprising the steps:obtaining an indium oxide-patterned substrate;forming a sol-gel zinc oxide precursor solution;spraying the sol-gel zinc oxide precursor solution onto the patterned indium oxide substrate to form a zinc oxide layer;annealing the zinc oxide layer;spraying an active layer comprising a bulk heterojunction composition on the zinc oxide layer;spraying an anodic layer comprising poly (3,4) ethylenedioxythiophene:poly-styrenesulfonate mixed with 5 vol. % of dimethylsulfoxide on the active layer to form a solar photovoltaic cell array;placing the solar photovoltaic cell into high vacuum for at least 1 hour;annealing the solar photovoltaic cell; andapplying an electrodic material to the solar photovoltaic cell array.2. The method of claim 1 , wherein the indium oxide is patterned by attaching a mask to the indium oxide layer;applying photoresist; ...

Semiconducting Layer Production Process

The invention provides a process for producing a layer of a semiconductor material, wherein the process comprises: a) disposing on a substrate: i) a plurality of particles of a semiconductor material, ii) a binder, wherein the binder is a molecular compound comprising at least one metal atom or metalloid atom, and iii) a solvent; and b) removing the solvent. The invention also provides a layer of semiconductor material obtainable by this process. In a preferred embodiment, the particles of a semiconductor material comprise mesoporous particles of the semiconductor material or mesoporous single crystals of the semiconductor material. The invention provides a process for producing a compact layer of a semiconductor material, wherein the process comprises: disposing on a substrate i) a solvent, and ii) a molecular compound comprising at least one metal or metalloid atom and one or more groups of formula OR, wherein each R is the same or different and is an unsubstituted or substituted C-Chydrocarbyl group, and wherein two or more R groups may be bonded to each other; and b) removing the solvent. The invention also provides a compact layer of a semiconductor material obtainable by this process. These processes can be effectively performed at temperatures of less than 300° C. Further provided are semiconductor devices comprising either a layer of a semiconductor material or a compact layer of a semiconductor material obtainable by the processes of the invention. The invention also provides a process for producing a semiconductor device. 1. A process for producing a layer of a semiconductor material , wherein the process comprises: i) a plurality of particles of a semiconductor material,', 'ii) a binder, wherein the binder is a molecular compound comprising at least one metal atom or metalloid atom, and', 'iii) a solvent; and, 'a) disposing on a substrate'} 'wherein either the layer of a semiconductor material is a compact layer of the semiconductor material and the ...

DEVICE AND METHOD FOR PATTERNING SUBSTRATE, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DEVICE

A method of patterning a substrate includes applying a first potential to a spray nozzle, applying a second potential to at least one first cell electrode among a plurality of cell electrodes on a first surface of the substrate, applying a third potential to at least one second cell electrode excluding the at least one first cell electrode among the cell electrodes, and applying a fourth potential to a second surface that is opposite to the first surface of the substrate. 1. A method of patterning a substrate using a patterning solution , the method comprises:applying a first potential to a spray nozzle;applying a second potential to at least one first cell electrode among a plurality of cell electrodes on a first surface of the substrate;applying a third potential to at least one second cell electrode excluding the at least one first cell electrode among the plurality of cell electrodes;applying a fourth potential to a back electrode disposed on a second surface which is opposite to the first surface of the substrate; andselectively depositing the patterning solution on the at least one first cell electrode by spraying the patterning solution from the spray nozzle to the first surface of the substrate,wherein the second potential is different from each of the first potential, the third potential, and the fourth potential.3. The method of claim 1 , whereinthe spray nozzle has a needle shape with a sharp end,a ring electrode having a ring shape is provided between the spray nozzle and the substrate, and 'applying a fifth potential which is different from the first to fourth potentials to the ring electrode.', 'the method further comprises5. The method of claim 1 , whereinan intermediate electrode layer in which a plurality of through holes is defined is provided between the spray nozzle and the substrate, and 'applying a fifth potential which is different from the first to fourth potentials to the intermediate electrode layer.', 'the method further comprises7. The ...

FLOATING EVAPORATIVE ASSEMBLY OF ALIGNED CARBON NANOTUBES

High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate. 1. A film comprising an array of aligned s-SWCNTs , wherein the array of aligned s-SWCNTs has a charge carrier mobility of at least 30 cmVsand an on-off ratio of at least 6×10.2. The film of claim 1 , wherein the array of aligned s-SWCNTs has a charge carrier mobility of at least 38 cmVsor higher.3. The film of claim 1 , wherein the film has a semiconducting single-walled carbon nanotube purity level of at least 99.9%. The present application is continuation of U.S. patent application Ser. No. 15/118,058 that was filed on Aug. 10, 2016, which is a National Stage Entry of International Application No. PCT/US15/15342 that was filed on Feb. 11, 2015, which claims priority to U.S. patent application Ser. No. 14/177,828 that was filed on Feb. 11, 2014, the entire contents of which are hereby incorporated by reference.This invention was made with government support under 1129802 and 0520527 awarded by the National Science Foundation. The government has certain rights in the invention.Single-walled carbon nanotubes (SWCNTs) are key building blocks for nanoscale science and technology due to their interesting physical and chemical properties. SWCNTs are particularly promising for high speed and low power semiconductor electronics. A challenge, however, is the hierarchical organization of these building blocks into organized assemblies and, ultimately, useful devices. Ordered structures are necessary, as random network SWCNT thin films result in sub- ...

Two-Terminal Switching Devices Comprising Coated Nanotube Elements

An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed. 1. A two-terminal switching device comprising:a first electrode;a second electrode; anda switching composite article disposed between and in constant electrical communication with each of said first electrode and said second electrode of said two terminal switching device, wherein said composite article is comprised of comprises a plurality of nanotube elements and a volume of nanoscopic particles;wherein said volume of nanoscopic particles is miscible with said plurality of nanotube elements and forms a continuous material around at least one of said nanotube elements.2. The two-terminal switching device of wherein substantially all of said nanotube elements are coated in a continuous material formed from said nanoscopic particles.3. The two-terminal switching device of wherein said continuous material coating increases the distance between said nanotube elements within said composite article.4. The two-terminal switching device of wherein said continuous material coating improves the switching functionality of said two-terminal switching device.5. The two-terminal switching device of wherein said volume of nanoscopic particles includes silicon oxide particles.6. The two-terminal switching device of wherein said volume of nanoscopic particles includes silicon nitride particles.7. The two-terminal switching device of wherein said nanotube ...

ORGANIC PHOTODIODE PIXEL FOR IMAGE DETECTORS

Imaging panels and imaging systems that may employ use organic photodiodes or other continuous sensors are discussed. The detector panels discussed may have a non-pixelated organic photodiode disposed above a pixelated backplane. In some embodiments, the sensor panels may also include dielectric structures that create buried vias in the region of contact between the organic photodiode and the thin film transistor (TFT) backplane. In some embodiments, the sensor panels may include dielectric structures that separate neighboring pixels. The dielectric structures may decrease thickness inhomogeneity in active areas of the organic photodiode. Detector panels discussed herein may have decreased sensing lag and current leakage, and improved reliability. Methods for formation of organic photodiodes and of dielectric structures are also discussed. 1. An imaging system comprising:a radiation source; and a thin film transistor (TFT) backplane on a substrate; and', an anode layer comprising a plurality of anodes, wherein each anode couples electrically to a corresponding pixel of the TFT backplane layer through a pixel coupling, and wherein the anode layer comprises a plurality of boundaries between the anodes that separates the pixels;', 'an organic photoactive layer disposed above the anode layer;', 'a plurality of dielectric structures disposed above the anode layer; and;', 'a cathode layer disposed above the photoactive layer; and, 'a photodiode layer comprising, 'a scintillator layer., 'a detector panel configured to receive an emission produced by the radiation source and transmitted through a subject disposed between the radiation source and the detector panel, wherein the detector panel comprises2. The imaging system of claim 1 , wherein the plurality of dielectric structures comprise dielectric structures disposed along the boundaries that separate the pixels;3. The imaging system of claim 1 , wherein the plurality of dielectric structures comprise dielectric ...

EFFICIENT INTERCONNECTING LAYER FOR TANDEM SOLAR CELLS

A tandem solar cell comprises a front subcell; a back subcell; and an interconnecting layer of Cr/MoObetween the front subcell and the back subcell and connecting the two subcells in series. The back subcell may be an isoindigo-based polymer. The front subcell may comprise a carbazole-thienyl-benzothiadiazole based polymer. The front subcell may comprise an isoindigo-based polymer. The isoindigo-based polymer is a repeating 2-thiophene-terminated polymer. A tandem solar cell comprises a substrate layer; a layer of PCDTBT:PCBM applied on the substrate layer; a bilayer of chromium and MoOapplied to the PCDTBT:PCBM layer; a layer of P(T3-il)-2:PCBM applied on the bilayer of chromium and MoO; and Ca and Al electrode layer on the top. 1. A tandem solar cell comprisinga front subcell;a back subcell; and{'sub': '3', 'an interconnecting layer of Cr/MoObetween the front subcell and the back subcell and connecting the two subcells in series.'}2. The tandem solar cell of claim 1 , wherein the back subcell comprises an isoindigo-based polymer.3. The tandem solar cell of claim 1 , wherein the front subcell comprises a carbazole-thienyl-benzothiadiazole based polymer.4. The tandem solar cell of claim 1 , wherein the front subcell comprises an isoindigo-based polymer.7. The tandem solar cell of claim 6 , wherein the substrate is a PEDOT:PSS coated ITO glass substrate.8. The tandem solar cell of claim 6 , wherein the layer of PCDTBT:PCBM is about 80-130 nm thick.9. The tandem solar cell of claim 6 , wherein the layer of PCDTBT:PCBM is about 80 nm thick.10. The tandem solar cell of claim 6 , wherein the bilayer of chromium and MoOcomprises thermally evaporated chromium and MoO.11. The tandem solar cell of claim 6 , wherein the bilayer of chromium and MoOcomprises a layer of chromium about 1-3 nm thick.12. The tandem solar cell of claim 6 , wherein the bilayer of chromium and MoOcomprises a layer of chromium about 2 nm thick.13. The tandem solar cell of claim 6 , wherein the bilayer ...

QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR, AND LIGHT-EMITTING MODULE AND DISPLAY APPARATUS

A preparation method of the QD light-emitting diode includes: prepare a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles; and prepare a cathode on the QD light-emitting layer, and form the QD light-emitting diode. 1. A preparation method of the QD light-emitting diode , comprising:prepare a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles; andprepare a cathode on the QD light-emitting layer, and form the QD light-emitting diode.2. The preparation method of the QD light-emitting diode according to claim 1 , wherein the step of preparing the QD light-emitting layer on the anode includes specifically: depositing a mixture of the QDs and the CuSCN nanoparticles on the anode by a solution method claim 1 , to form a QD light-emitting layer containing the CuSCN nanoparticles.3. The preparation method of the QD light-emitting diode according to claim 1 , wherein the step of preparing the QD light-emitting layer on the anode includes specifically: blending the QDs and the CuSCN nanoparticles claim 1 , before depositing on the anode through evaporation method claim 1 , and forming a QD light-emitting layer containing the CuSCN nanoparticles.4. The preparation method of the QD light-emitting diode according to claim 1 , wherein comprising specifically:prepare a holes injection layer on the anode;prepare a holes transport layer on the holes injection layer;prepare a QD light-emitting layer on the holes transport layer; wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles;prepare an electrons transport layer on the QD light-emitting layer, and prepare a cathode on the electrons transport layer before forming a QD light-emitting diode.5. The preparation method of the QD light-emitting diode according to claim 4 , wherein preparing a QD light-emitting layer on the holes transport layer includes ...

ELECTROLUMINESCENT DEVICE AND A LIGHT EMITTING SYSTEM

An electroluminescent device including an electrode, the electrode being ionically conductive; an electroluminescence layer positioned adjacent or in contact with the electrode, the electroluminescence layer being electrically coupled to the electrode; the electroluminescence layer receiving electrical energy from the electrode and illuminating in response to received electrical energy, and wherein the electrode and the electroluminescence layer are repairable such that the function of the electrode and the electroluminescence layer is restored after a deformation. 1. An electroluminescent device comprising:an electrode, the electrode being ionically conductivean electroluminescence layer positioned adjacent or in contact with the electrode, the electroluminescence layer being electrically coupled to the electrode,the electroluminescence layer receiving electrical energy from the electrode and illuminating in response to received electrical energy, and;wherein the electrode and the electroluminescence layer are repairable such that the function of the electrode and the electroluminescence layer is restored after a deformation.2. The electroluminescent device in accordance with claim 1 , wherein the electrode and the electroluminescence layer each are repairable such that the function of the electrode and the electroluminescence layer is restored even after being cut.3. The electroluminescent device in accordance with claim 1 , wherein the electroluminescence device comprises a first electrode claim 1 , a second electrode claim 1 , the electroluminescence layer being sandwiched between the first electrode and the second electrode and the electroluminescence layer arranged in electrical communication with the first electrode and the second electrode.4. The electroluminescent device in accordance with claim 1 , wherein the electroluminescence layer comprises a polymer and an electroluminescent material.5. The electroluminescent device in accordance with claim 4 , ...

ORGANIC ELETROLUMINESCENT MATERIAL, PREPARATION METHOD THEREOF AND ORGANIC ELETROLUMINESCENT DEVICE

The invention provides an organic electroluminescent material, preparation method thereof and an organic electroluminescent device. The organic electroluminescent material of the invention is a class of compounds based on imidazole [1,5-a][1,8]naphthyridine, and has a structure presented by Formula (I) as below. The invention also provides application of the material in organic light-emitting diodes (OLED). The compound of the invention has high stability, and the organic electroluminescent device according to the invention has high efficiency. 2. The organic electroluminescent material according to claim 1 , wherein Ar is selected from a phenyl group claim 1 , a naphthyl group claim 1 , a biphenyl group claim 1 , a phenanthryl group claim 1 , an anthracenyl group claim 1 , an arylanthryl group claim 1 , a pyrenyl group claim 1 , a dibenzofuranyl group claim 1 , a dibenzothienyl group claim 1 , a benzimidazolyl group claim 1 , a pyridyl group claim 1 , a pyrimidinyl group claim 1 , a quinolyl group claim 1 , an isoquinolyl group claim 1 , a triazinyl group claim 1 , a pyrrolyl group claim 1 , a furanyl group claim 1 , a thiazolyl group claim 1 , a quinazolinyl group claim 1 , a triazolyl group claim 1 , a benzothiazolyl group claim 1 , a benzothiadiazolyl group claim 1 , a 1 claim 1 ,2 claim 1 ,4-triazolyl group claim 1 , a triphenylamino group claim 1 , an arylcarbazolyl group claim 1 , a N-aryl substituted carbazolyl group claim 1 , a diphenylamino group claim 1 , an acridinyl and derivative thereof substituent group claim 1 , a phenoxazinyl and derivative thereof substituent group or a phenothiazinyl and derivative thereof substituent group. R is selected from a hydrogen atom claim 1 , a phenyl group claim 1 , a naphthyl group or a pyridyl group.3. The organic electroluminescent material according to claim 2 , wherein Ar is selected from a phenyl group claim 2 , a naphthyl group claim 2 , a biphenyl group claim 2 , a phenanthryl group claim 2 , an anthracenyl ...

METHOD FOR MANUFACTURING MOLECULAR MEMORY DEVICE

According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members. 115.-. (canceled)16. A method for manufacturing a molecular memory device , comprising:forming a first wiring layer including a plurality of first wirings extending in a first direction;forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction;forming a sacrificial film to cover the core member, the sacrificial film being formed from an insulating material different from the core member;forming a second wiring on a side surface of the core member;removing a portion of the sacrificial film located immediately below the second wiring;embedding a molecule serving as a memory material into a space between the first wiring and the second wiring after forming the second wiring and removing the portion of the sacrificial film, the portion of the sacrificial film being removed from the space; andembedding an insulating member in a space between the second wirings between the core members.17. The method according to claim 16 , further comprising:forming a spacer insulating ...

FUNCTIONALIZED NANOSTRUCTURES AND RELATED DEVICES

Embodiments described herein provide functionalized carbon nanostructures for use in various devices, including photovoltaic devices (e.g., solar cells). In some embodiments, carbon nanostructures substituted with at least one cyclobutyl and/or cyclobutenyl group are provided. Devices including such materials may exhibit increased efficiency, increased open circuit potential, high electron/hole mobility, and/or low electrical resistance. 1. A device , comprising:a composition comprising a carbon nanostructure comprising at least one cyclobutyl and/or at least one cyclobutenyl group, any of which is optionally substituted; andat least one electrode in electrochemical communication with the composition.2. A device as in claim 1 , wherein the carbon nanostructure comprises a fused network of aromatic rings claim 1 , optionally comprising a border at which the fused network terminates claim 1 , wherein the at least one cyclobutyl and/or at least one cyclobutenyl group is attached to the network via at least one ring atom of the network.3. (canceled)4. A device as in claim 2 , wherein two ring atoms of the at least one cyclobutyl and/or at least one cyclobutenyl group form covalent bonds with two ring atoms of the network of aromatic rings.5. A device as in claim 1 , wherein the carbon nanostructure comprises two cyclobutenyl groups claim 1 , optionally substituted.6. A device as in claim 1 , wherein the carbon nanostructure comprises three cyclobutenyl groups claim 1 , optionally substituted.7. A device as in claim 1 , wherein the carbon nanostructure is a fullerene claim 1 , a nanotube claim 1 , graphene claim 1 , or graphite.813-. (canceled)15. A device as in claim 14 , wherein R-Rare alkyl.1620-. (canceled)22. (canceled)23. A device as in claim 21 , wherein Rand Rare joined to form an epoxide ring.24. A device as in claim 21 , wherein at least one of R-Ris not hydrogen.25. A device as in claim 21 , wherein at least one of R-Ris not hydrogen.26. A device as in claim 1 ...

TREATMENT LIQUID CONTAINING IONIC COMPOUND, ORGANIC ELECTRONIC ELEMENT, AND METHOD FOR PRODUCING ORGANIC ELECTRONIC ELEMENT

An embodiment of the present invention relates to a treatment liquid which contains an ionic compound and a solvent, and is used for adhering the ionic compound to at least one surface selected from the group consisting of a surface on which a layer having hole transport properties is to be formed, and a surface of a layer having hole transport properties. 1. A treatment liquid comprising an ionic compound and a solvent , wherein the treatment liquid is used for adhering the ionic compound to at least one surface selected from the group consisting of a surface on which a layer having hole transport properties is to be formed , and a surface of a layer having hole transport properties.2. The treatment liquid according to claim 1 , wherein the treatment liquid comprises the ionic compound and the solvent claim 1 , and is to be applied to the surface on which a layer having hole transport properties is to be formed.3. The treatment liquid according to claim 1 , further comprising a compound having a polymerizable substituent.6. The treatment liquid according to claim 3 , wherein the compound having a polymerizable substituent has at least one group selected from the group consisting of an oxetanyl group claim 3 , epoxy group claim 3 , vinyl group claim 3 , vinyl ether group claim 3 , acrylate group and methacrylate group.7. An organic electronic element having an anode claim 3 , a surface to which an ionic compound is adhered claim 3 , a layer (A) having hole transport properties claim 3 , and a cathode claim 3 , in that order.8. The organic electronic element according to claim 7 , wherein the surface to which an ionic compound is adhered is a surface to which a treatment liquid comprising the ionic compound and a solvent has been applied.9. The organic electronic element according to claim 8 , wherein the treatment liquid further comprises a compound having a polymerizable substituent.10. The organic electronic element according to claim 7 , wherein the surface to ...

COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME

A compound, an organic light-emitting device, and a flat display apparatus, the compound being represented by Formula 1, below: 2. The compound as claimed in claim 1 , wherein claim 1 , in Formula 1 claim 1 , Rand Rare each independently selected from a substituted or unsubstituted C-Calkyl group and a substituted or unsubstituted C-Caryl group.3. The compound as claimed in claim 1 , wherein claim 1 , in Formula 1 claim 1 , Rand Rare each independently a methyl group or a phenyl group.4. The compound as claimed in claim 1 , wherein claim 1 , in Formula 1 claim 1 , Rto Rare each independently a hydrogen or a deuterium.5. The compound as claimed in claim 1 , wherein claim 1 , in Formula 1 claim 1 , Aris selected from a substituted or unsubstituted C-Cheteroaryl group claim 1 , a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group claim 1 , and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group.7. The compound as claimed in claim 6 , wherein claim 6 , in Formula 1 claim 6 , adjacent ones of the plurality of Rlink to each other and form a ring.8. The compound as claimed in claim 1 , wherein claim 1 , in Formula 1 claim 1 , a and d are each independently an integer selected from 0 to 4 claim 1 , and a sum of a and d is 4.9. The compound as claimed in claim 1 , wherein claim 1 , in Formula 1 claim 1 , b is 1 or 2.10. The compound as claimed in claim 1 , wherein claim 1 , in Formula 1 claim 1 , c is an integer selected from 0 to 6.15. An organic light-emitting device claim 1 , comprising:a first electrode;a second electrode facing the first electrode; andan organic layer that between the first electrode and the second electrode, the organic layer including an emission layer,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the organic layer includes the compound as claimed in .'}16. The organic light-emitting device as claimed in claim 15 , wherein the organic layer is formed by using a wet process. ...

METHOD FOR GROWING CARBON NANOTUBES

A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs. 1. A method of forming carbon nanotubes (CNTs) , the method comprising:dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate;ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds; andgrowing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNT seeds to form a plurality of substantially pure CNTs.2. The method of claim 1 , further comprising providing CNT seeds in an aqueous surfactant solution claim 1 , destabilizing the molecules surrounding the CNT seeds to provide a de-stabilized aqueous surfactant solution of seeds claim 1 , and dispersing the CNT seeds by drop casting or spin casting the de-stabilized aqueous surfactant solution of seeds on the substrate.3. The method of claim 1 , further comprising providing CNT seed mats claim 1 , suspending the CNT mats in n-methyl-2-pyrrolidone (NMP) using sonication and dispersing the plurality of substantially semiconductor pure CNT seeds by spinning them or drop casting them onto the substrate.4. The method of claim 1 , wherein the substrate is a quartz substrate.5. The method of claim 1 , wherein the ozonating comprises subjecting the seeded substrate to ozone at room temperature in an ambient environment.6. The method of claim 5 , wherein the ozonating comprises providing oxygen to the seeded substrate under ultra-violet light.7. The method of ...

ORGANIC TRANSISTOR, COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, MATERIAL FOR ORGANIC TRANSISTOR, COATING SOLUTION FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, AND METHOD FOR SYNTHESIZING ORGANIC SEMICONDUCTOR MATERIAL

Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. 2. The organic transistor according to claim 1 ,wherein in Formula (1), each of the aromatic heterocycles containing Y and Z is independently any one of a thiophene ring, a furan ring, a pyrrole ring, a thiazole ring, and an oxazole ring.3. The organic transistor according to claim 1 ,{'sup': 1', '2', '3', '4, 'wherein in Formula (1), the number of carbon atoms contained in R, R, R, and Ris equal to or less than 30.'}4. The organic transistor according to claim 1 ,wherein in Formula (1), both of m and n are 0.5. The organic transistor according to claim 1 ,{'sup': 1', '2, 'wherein in Formula (1), each of Rand Ris independently an alkyl group having 20 or less carbon atoms, an aryl group having 20 or less carbon atoms, or a heteroaryl group having 20 or less carbon atoms.'}6. The organic transistor according to claim 1 ,{'sup': 1', '2', '3', '4, 'wherein in Formula (1), Rand Rare the same as each other, Rand Rare the same as each other, and m and n are the same as each other.'}9. The organic transistor according to claim 8 ,{'sup': '1', 'wherein in Formula (4) or (5), Rhas an aliphatic hydrocarbon group.'}10. The organic transistor according to claim 8 ,{'sup': '1', 'wherein in Formula (4) or (5), Ris an aryl group having a linear aliphatic hydrocarbon group or a heteroaryl group ...

ORGANIC LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF, DISPLAY APPARATUS

An organic light emitting diode, which includes a substrate, a first electrode, at least one of red and green emissive layers, a blue emissive layer, a second electrode, and an exciplex elimination layer that is formed between at least one of the red and green emissive layers and the blue emissive layer; the exciplex elimination layer acts to confine carriers in at least one of the red and green emissive layers. 1. An organic light emitting diode , comprising a substrate , a first electrode , at least one of red and green emissive layers , a blue emissive layer , a second electrode , and an exciplex elimination layer formed between the at least one of the red and green emissive layers and the blue emissive layer;wherein, the exciplex elimination layer is configured to confine carriers in the at least one of the red and green emissive layers.2. The organic light emitting diode claimed as claim 1 , wherein claim 1 , the organic light emitting diode further includes one or more selected from the group consisting of a hole injection layer claim 1 , a hole transportation layer claim 1 , an electron injection layer and an electron transportation layer.3. The organic light emitting diode claimed as claim 2 , wherein claim 2 , the exciplex elimination layer and the electron transportation layer are of a same material.4. The organic light emitting diode claimed as claim 1 , wherein claim 1 , the exciplex elimination layer has a material of 4 claim 1 ,7-diphenyl-1 claim 1 ,10-phenanthroline.5. The organic light emitting diode claimed as claim 1 , wherein claim 1 , a difference between an energy lever of the Highest Occupied Molecular Orbital of the exciplex elimination layer and an energy lever of the Highest Occupied Molecular Orbital of a host material of the blue emissive layer is less than 1 ev.6. The organic light emitting diode claimed as claim 1 , wherein claim 1 , the difference between the energy lever of the Highest Occupied Molecular Orbital of the exciplex ...

INFRARED DETECTION WITH INTRINSICALLY CONDUCTIVE CONJUGATED POLYMERS

A photoconductive infrared detector comprising a substrate, an electrode geometry, and a layer of intrinsically conductive or photoconductive donor-acceptor conjugated polymer. 1A photoconductive detector with an organic active layer comprising:a substrate; a first transmission line having a terminal end;', 'a second transmission line having a terminal end, wherein the first and second transmission lines are spaced apart to define a gap, the gap between the first and second transmission lines acting as one pixel;, 'an electrode geometry positioned on the substrate and includinga first layer at least partially covering the gap; anda second layer at least partially covering the polymer, wherein the second layer is configured as an encapsulant.2. The photoconductive detector of claim 1 , wherein the second layer is formed of one of alumina claim 1 , silica claim 1 , zinc selenide claim 1 , germanium claim 1 , barium fluoride claim 1 , germanium-arsenide-selenide claim 1 , gallium arsenide claim 1 , glass claim 1 , fused silica (“quartz”) claim 1 , silicon claim 1 , magnesium fluoride claim 1 , calcium fluoride claim 1 , zinc sulphide claim 1 , and magnesium aluminate.3. The photoconductive detector claim 1 , wherein the first layer is formed of an oligomer or polymer with a conjugated structure claim 1 , narrow bandgap claim 1 , is electrically conductive claim 1 , and possesses open-shell character.4. The photoconductive detector of claim 1 , wherein the first layer is a spin-coated claim 1 , donor-acceptor conjugated polymer layer.5. The photoconductive detector of claim 1 , wherein the first layer is deposited by oxidative chemical vapor deposition.6. The photoconductive detector of claim 1 , further comprising:pulse capture electronics;cascaded pre-amplifier circuitry; andan analog-to-digital converter.7. The photoconductive detector of claim 1 , wherein the electrode geometry is biased with an RF or DC potential less than a dielectric breakdown threshold of the ...

POLYMER AND ORGANIC LIGHT EMITTING DEVICE

A polymer comprising a repeat unit of formula (I): wherein Rin each occurrence is independently H or a substituent; Rin each occurrence is independently a substituent; and x is 0, 1, 2 or 3. The polymer may be used as a light-emitting polymer in an organic light-emitting device. 2. A polymer according to wherein each Ris independently a Chydrocarbyl group.3. A polymer according to wherein each x is 0.4. A polymer according to wherein at least one x is at least 1.5. A polymer according to wherein each Ris independently a Chydrocarbyl group.6. A polymer according to wherein the polymer is a co-polymer comprising one or more co-repeat units.7. A polymer according to wherein the repeat unit of formula (I) is bound directly to aromatic carbon atoms of adjacent repeat units.9. An organic light-emitting device according to wherein the semiconducting region comprises a light-emitting layer comprising the polymer.10. An organic light-emitting device according to wherein the semiconducting region comprises a light-emitting layer and a charge-transporting layer claim 8 , the charge-transporting layer comprising the polymer.11. An organic light-emitting device according to wherein the device emits white light.12. A formulation comprising a polymer according to and at least one solvent. Electronic devices containing active organic materials are attracting increasing attention for use in devices such as organic light emitting diodes (OLEDs), organic photoresponsive devices (in particular organic photovoltaic devices and organic photosensors), organic transistors and memory array devices. Devices containing active organic materials offer benefits such as low weight, low power consumption and flexibility. Moreover, use of soluble organic materials allows use of solution processing in device manufacture, for example inkjet printing or spin-coating.An OLED may comprise a substrate carrying an anode, a cathode and one or more organic light-emitting layers between the anode and cathode ...

Photo-patternable gate dielectrics for ofet

Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.

ENVIRONMENTALLY CONTROLLED COATING SYSTEMS

Embodiments of an enclosed coating system according to the present teachings can be useful for patterned area coating of substrates in the manufacture of a variety of apparatuses and devices in a wide range of technology areas, for example, but not limited by, OLED displays, OLED lighting, organic photovoltaics, Perovskite solar cells, and organic semiconductor circuits. Enclosed and environmentally controlled coating systems of the present teachings can provide several advantages, such as: 1) Elimination of a range of vacuum processing operations such coating-based fabrication can be performed at atmospheric pressure. 2) Controlled patterned coating eliminates material waste, as well as eliminating additional processing typically required to achieve patterning of an organic layer. 3) Various formulations used for patterned coating with various embodiments of an enclosed coating apparatus of the present teachings can have a wide range of physical properties, such as viscosity and surface tension. Various embodiments of an enclosed coating system can be integrated with various components that provide a gas circulation and filtration system, a particle control system, a gas purification system, and a thermal regulation system and the like to form various embodiments of an enclosed coating system that can sustain an inert gas environment that is substantially low-particle for various coating processes of the present teachings that require such an environment. 1. A system comprising:a gas enclosure defining an interior to maintain a controlled environment; a slot die coating assembly;', 'a substrate support system to support a substrate to be coated; and', 'a motion system configured to position the substrate and the slot die coating assembly relative to one another;, 'a coating system housed within the interior of the gas enclosure, the coating system comprisinga gas circulation and filtration system in flow communication with the interior of the gas enclosure; anda ...

Organic Light-Emitting Display Device

An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank, thereby increasing lifespan. The organic light-emitting display device includes a first electrode protective pattern. 1. An organic light-emitting display device , comprising:a substrate having a plurality of sub-pixels;first electrodes provided respectively in the sub-pixels;a first electrode protective pattern provided on an edge of each of the first electrodes and to be in contact with each of the first electrodes;a bank configured to overlap a portion of the first electrode protective pattern so as to define an emission area;an organic light-emitting layer on each of the first electrodes so as to correspond to the emission area; anda second electrode on the organic light-emitting layer,wherein the bank includes:a first layer configured to overlap a portion of each of the first electrodes so that the area between each of the first electrodes of the neighboring sub-pixels is filled with the first layer; anda second layer on the first layer so as to correspond to the area between each of the first electrodes of the neighboring sub-pixels.2. The device according to claim 1 , wherein a region of the bank that overlaps the portion of the first electrode protective pattern is located on the first electrode protective pattern.3. The device according to claim 1 , wherein the first electrode protective pattern is directly located only on the edge of the first electrode.4. The device according to claim 1 , wherein the first electrode protective pattern is directly located on a top and a side of the edge of the first electrode.5. The device according to claim 4 , wherein the first electrode protective pattern extends from the side of the edge of the first electrode so that an area between the first electrodes of the neighboring sub-pixels is filled with the first electrode protective pattern.6. The device according to ...

Method and apparatus for manufacturing semiconductor elements

The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.

Ionic Compound, Coating Composition Comprising Same, And Organic Light-emitting Diode

The present disclosure relates to an ionic compound including an anion group of Chemical Formula 1, and a coating composition and an organic light emitting device including the same. 10. A coating composition comprising the ionic compound of .11. The coating composition of claim 10 , which is for an organic light emitting device.12. The coating composition of claim 10 , further comprising an arylamine compound that is a monomer or a polymer.14. An organic light emitting device comprising:a first electrode;a second electrode provided opposite to the first electrode; andone or more organic material layers provided between the first electrode and the second electrode,{'claim-ref': {'@idref': 'CLM-00010', 'claim 10'}, 'wherein one or more layers of the organic material layers include a cured material of the coating composition of .'}15. The organic light emitting device of claim 14 , wherein the cured material of the coating composition is in a cured state by heat treating or light treating the coating composition.16. The organic light emitting device of claim 14 , wherein the organic material layer including the cured material of the coating composition is a hole transfer layer claim 14 , a hole injection layer claim 14 , or a layer carrying out hole transfer and hole injection at the same time.17. The organic light emitting device of claim 14 , wherein the organic material layer including the cured material of the coating composition is a hole transfer layer claim 14 , and the ionic compound of the cured material of the coating composition is included as a p-doping material of the hole injection layer.18. The organic light emitting device of claim 17 , further comprising an arylamine compound that is a monomer or a polymer as a host of the hole injection layer.20. The organic light emitting device of claim 17 , wherein a host of the hole injection layer is a compound having a HOMO level from 4.8 eV to 5.8 eV. This application claims priority to and the benefits of ...

ORGANIC SEMICONDUCTORS

The invention relates to novel compounds containing one or more 1,3-dithiolo[4,5-d]phthalimide (“DTPI”) units, to methods for their preparation preparation and educts or intermediates used therein, to mixtures and formulations containing them, to the use of the compounds, mixtures and formulations as organic semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these compounds, mixtures or formulations. 132.-. (canceled)34. The compound according to claim 33 , wherein Rand R denote alkyl claim 33 , alkoxy or thiaalkyl claim 33 , all of which are straight-chain or branched claim 33 , have 1 to 25 C atoms claim 33 , and are optionally fluorinated.35. The compound according to claim 33 , which is a conjugated polymer comprising one or more units selected of formula I as defined in claim 33 , and further comprising one or more arylene or heteroarylene units that have from 5 to 20 ring atoms claim 33 , are mono- or polycyclic claim 33 , do optionally contain fused rings claim 33 , are unsubstituted or substituted by one or more identical or different groups L as defined in claim 33 , and are either selected of formula I or are structurally different from formula I claim 33 , and wherein all the aforementioned units are directly connected to each other.36. The compound according to claim 33 , which is a conjugated polymer comprising one or more repeating units of formula II1 or II2 claim 33 , and optionally one or more repeating units of formula II3:{'br': None, 'sup': 1', '2', '3', '4, 'sub': a', 'b', 'c', 'd, '—(Ar)—U—(Ar)—(Ar)—(Ar)—\u2003\u2003II1'}{'br': None, 'sup': 1', '2', '3', '4, 'sub': a', 'b', 'c', 'd, '—(Ar)—(Ar)—U—(Ar)—(Ar)—\u2003\u2003II2'}{'br': None, 'sup': 1', '2', '3', '4, 'sub': a', 'b', 'c', 'd, '—(Ar)—(Ar)—(Ar)—(Ar)—\u2003\u2003II3'}wherein the individual radicals, independently of each other and on each occurrence identically or ...

SEMI-FLUOROALKYL GROUP SUBSTITUTED ORGANIC SEMICONDUCTOR POLYMER AND ORGANIC THIN FILM TRANSISTOR INCLUDING THE SAME

A semi-fluoroalkyl group substituted organic semiconductor polymer and an organic thin film transistor including the same are disclosed. A structure in which hydrogen of only a terminal of an alkyl group is substituted with fluorine exhibits significantly increased hole mobility, and significantly improved properties in terms of thermal stability and chemical stability, as compared to a structure in which all hydrogens coupled to a thiophene ring are substituted with fluorine, or a structure in which hydrogen of the terminal thereof is not substituted with fluorine and only hydrogens of the remaining portion are coupled to the thiophene ring. 2. The π-conjugated compound according to claim 1 , wherein the carbon number of the fluorine-substituted alkyl group is 1 to 2 times the carbon number of the fluorine-unsubstituted alkyl group.4. The π-conjugated compound according to claim 3 , wherein p and p′ are the same claim 3 , and q and q′ are the same.5. The π-conjugated compound according to claim 4 , wherein p and p′ are an integer from 4 to 6 claim 4 , and q and q′ are an integer from 6 to 8.6. The π-conjugated compound according to claim 5 , wherein p claim 5 , p′ claim 5 , q and q′ are respectively 5 claim 5 , 5 claim 5 , 7 claim 5 , and 7.7. A conductive organic thin film comprising the π-conjugated compound according to .8. An organic field effect transistor comprising: a source electrode; a drain electrode; a gate electrode; a gate insulating layer; and an organic semiconductor layer claim 7 , wherein the organic semiconductor layer comprises the conductive organic thin film according to .10. The method according to claim 9 , wherein operation (a) is performed in diethyl ether as a polar solvent using Kumada coupling in order to stabilize formation of Grignard complexes;operation (b) is performed under anhydrous conditions using radical reactions in order to prevent annihilation of radicals;{'sub': '4', 'operation (c) is performed using NaBH, which is a ...

POLYMER

A polymer comprising an optionally substituted repeat unit of formula (I): wherein Rand Rin each occurrence are independently selected from H or a substituent; Rand Rmay be linked to form a ring; and A is an optionally substituted linear, branched or cyclic alkyl group. 2. The polymer according to wherein Rand Rare independently selected from the group consisting of hydrogen; substituted or unsubstituted aryl or heteroaryl groups; a linear or branched chain of substituted or unsubstituted aryl or heteroaryl groups; and substituted or unsubstituted alkyl wherein one or more non-adjacent C atoms of the alkyl group may be replaced with O claim 1 , S claim 1 , substituted N claim 1 , C═O and —COO—.3. (canceled)4. The polymer according to wherein Rand Rare not linked.5. (canceled)8. The polymer according to wherein the polymer comprises repeat units of formula (I) and one or more further repeat units comprising substituted or unsubstituted fluorene repeat units other than repeat units of formula (I).9. (canceled)11. (canceled)12. The polymer according to wherein A is a branched alkyl.14. The monomer according to wherein X is a leaving group capable of participating in a metal-mediated cross-coupling reaction.15. The monomer according to wherein X is selected from the group consisting of chlorine claim 14 , bromine claim 14 , iodine claim 14 , sulfonic acid or ester claim 14 , and boronic acid or ester.17. The method according to wherein the polymerization is performed in the presence of a nickel catalyst or in the presence of a palladium catalyst and a base.18. (canceled)19. An organic electronic device comprising at least one layer comprising a polymer according to .20. The organic electronic device according to wherein the device is an organic light-emitting device comprising an anode claim 19 , a cathode and a light-emitting layer between the anode and the cathode.21. The organic electronic device according to wherein the at least one layer comprising a polymer is the ...

LIQUID COMPOSITION, PHOTOELECTRIC CONVERSION ELEMENT PRODUCTION METHOD, AND PHOTOELECTRIC CONVERSION ELEMENT

A QD particle dispersion contains a surface modification compound that protects a surface of QD phosphor particles dispersed in a solvent. The surface modification compound includes a heteroatom-containing functional group and a chain-type saturated hydrocarbon group. The QD particle dispersion is configured such that the absolute value of a difference between the surface free energy of an underlayer that provides a foundation for forming a QD layer in the light-emitting element and the surface free energy of the QD layer is 5 mN/m or less. 1. A liquid composition that is applied onto an underlayer to form a quantum dot layer comprising quantum dot particles , the liquid composition comprising:a solvent;quantum dot particles dispersed in the solvent; anda surface protection material protecting a surface of the quantum dot particles,wherein the underlayer supplies electrons or positive holes to the quantum dot layer;{'sub': n', '2n+1, 'the surface protection material contains, as a main component, a surface modification compound comprising: a functional group having a heteroatom, and a chain-type saturated hydrocarbon group represented by the molecular formula CH(n being a natural number); and'}an absolute value of a difference between a surface free energy of the quantum dot layer and a surface free energy of the underlayer is 5 mN/m or less.2. The liquid composition according to claim 1 ,wherein in the surface modification compound, n is from 8 to 20.3. The liquid composition according to claim 1 ,wherein the surface modification compound is an amine or a thiol.4. The liquid composition according to claim 1 ,wherein in a case where the quantum dot layer is formed, the liquid composition does not comprise a binder serving as a base material supporting the quantum dot particles.5. A method of manufacturing a photoelectric conversion element provided with the quantum dot layer between a first electrode and a second electrode disposed above the first electrode claim 1 ...

NOVEL COMPOUND FOR ORGANIC ELECTRIC ELEMENT, ORGANIC ELECTRIC ELEMENT USING THE SAME, AND ELECTRONIC DEVICE COMPRISING SAME

Provided is a novel compound for EBL capable of improving the light emitting efficiency, stability and life span of a device, and an organic electric element and an electronic device using the same. 112.-. (canceled)18. An organic electric element comprising: a first electrode; a second electrode; and an organic material layer positioned between the first electrode and the second electrode claim 13 , wherein the organic material layer comprises the compound according to .19. The organic electric element of claim 18 , further comprising a light efficiency enhancing layer formed on one side of the first electrode opposite to the organic material layer and/or one side of the second electrode opposite to the organic material layer.20. The organic electric element of claim 18 , wherein the organic material layer is formed by a process selected from the group consisting of a spin coating process claim 18 , a nozzle printing process claim 18 , an inkjet printing process claim 18 , a slot coating process claim 18 , a dip coating process claim 18 , and a roll-to-roll process.21. The organic electric element of claim 18 , comprising the compound as a hole transport material.22. An organic electric element comprising: a first electrode; a second electrode; and an organic material layer positioned between the first electrode and the second electrode; wherein the organic material layer comprises a mixture of the compounds having different structures according to .23. An electronic device comprising a display device comprising the organic electric element of ; and a control part driving the display device.24. The electronic device according to claim 23 , wherein the organic electric element is at least one selected from the group consisting of an OLED claim 23 , an organic solar cell claim 23 , an organic photo conductor (OPC) claim 23 , an organic transistor (organic TFT) and an element for monochromic or white illumination. The present invention relates to compound for organic ...

PHOTOVOLTAIC YARN AND A PRODUCTION METHOD

The present invention relates to a photovoltaic yarn and production method wherein electrical conduction is enabled by the photovoltaic yarn comprising a texturized yarn () with a cathode layer (), an active layer () and an anode layer () coating thereon, the photovoltaic yarn can generate electricity utilizing the solar light, and which is developed especially to be used in textile industry. 1. A photovoltaic yarn , comprising:at least one texturized yarn,at least one intermediate layer covering the texturized yarn to increase the adhesion strength of the yarn,at least one cathode layer comprising a gallium-indium alloy coats on the yarn by means of the intermediate layer,{'sub': 61', '71', '71, 'at least one active layer comprising an electron donor material selected from a group consisting of p-type poly (3-hexylthiophene) (P3HT), poly [N-9′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7″-di-2-thienyl-2′,1′,3′-benzothiadiazole)](PCDTBT), poly Poly [2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-enzothiadiazole)] (PCPDTBT), poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl}{3 -fluoro-2-[2-ethylhexyl) carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7) and semi conductive polymers and an electron acceptor material selected from a group consisting of n-type carbon-60 derived [6,6]-phenyl-C-butyric acid methyl ester (PCBM); (6,6)-phenyl C-butyric acid methyl ester (PCBM), 1′,1″,4′,4″-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2″,3″][5,6]fullerene-C60, C60 derivative, indene-C60 bisadduct (ICBA) and semi conductive polymers,'}at least one anode layer, wherein the anode layer is a mixture of polymers comprising poly (3,4-ethylenedioxythyophene) (PEDOT), polystyrenesulphonate (PSS), dimethyl sulfoxide (DMSO) and triton X-100.2. The photovoltaic yarn according to claim 1 , wherein the anode layer comprises poly(3 claim 1 ,4-ethylenedioxythyophene)(PEDOT) and polysturenesulphonate (PSS) claim 1 , wherein the anode ...

RESISTIVE CHANGE ELEMENTS USING PASSIVATING INTERFACE GAPS AND METHODS FOR MAKING SAME

A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack. 1. A method to fabricate a resistive change element , said method comprising:forming a stack over a substrate, said stack including a conductive material, a resistive change material, a first surface, and a second surfaces opposite said first surface;depositing a first material over said stack such that said first material directly contacts at least one of said first surface and said second surface of said stack;after depositing said first material, forming a second material over said first material; andevaporating a portion of said first material through said second material to create a gap between said second material and said at least one of said first surface and said second surface of said stack.2. The method of claim 1 , said resistive change material is a nanotube fabric and said resistive change material is deposited by a spin coating operation.3. The method of claim 1 , wherein one of a gas or a vacuum is in said gap between said second material and said at least one of said first surface and said second surface of said stack.4. The method of claim 1 , wherein said first material is a polymer material and said second material is an oxide material.5. The method of claim 1 , wherein said forming said second material is ...

n-TYPE SEMICONDUCTOR ELEMENT, COMPLEMENTARY TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE IN WHICH SAME IS USED

An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof. 1. An n-type semiconductor device comprising:a substrate;a source electrode, a drain electrode, and a gate electrode;a semiconductor layer in contact with the source electrode and the drain electrode;a gate insulating layer insulating the semiconductor layer from the gate electrode; anda second insulating layer in contact with the semiconductor layer on the opposite side of the semiconductor layer from the gate insulating layer;wherein the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof; andwherein the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom.2. The n-type semiconductor device according to claim 1 , wherein the conjugated polymer comprises claim 1 , in the repeating units thereof claim 1 , a fused heteroaryl unit having a nitrogen-containing double bond in the ring thereof and a thiophene unit.4. The n-type semiconductor device according to claim 3 , wherein Rto Rin the general formulae (1) to (8) are hydrocarbon groups.5. The n-type semiconductor device according to claim 1 , wherein the second insulating layer comprises an amine compound having a ring structure.6. The n-type semiconductor device according to claim 3 , wherein the second ...

DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS BY USING THE SAME

A deposition apparatus includes a stage and a deposition module. The stage holds a substrate. The deposition module faces the substrate. The stage relatively moves in a direction relative to the deposition module. The deposition module includes a first feeding unit and a first light exposure unit. The first feeding unit sprays a first raw material toward the substrate. The first light exposure unit is disposed on at least one side of the first feeding unit and provides light to the at least one raw material sprayed on the substrate. 1. A deposition apparatus comprising:a stage configured to hold a substrate; anda deposition module configured to face the substrate,wherein the stage relatively moves in a direction relative to the deposition module, and the deposition module comprises:a first feeding unit configured to spray a first raw material toward the substrate, anda first light exposure unit disposed on at least one side of the first feeding unit and configured to provide light to the first raw material sprayed on the substrate,2. The deposition apparatus of claim 1 , further comprising a chamber claim 1 , wherein the stage and the deposition module are positioned in the chamber claim 1 , wherein the deposition module further comprises a first discharge unit interposed between the first feeding unit and the first light exposure unit and configured to discharge from the chamber some of the first raw material sprayed from the first feeding unit.3. The deposition apparatus of claim 2 , wherein the first light exposure unit is disposed in a downstream part of the direction in which the stage relatively moves relative to the deposition module.4. The deposition apparatus of claim 2 , wherein the first discharge unit and the first light exposure unit have different heights from each other.5. The deposition apparatus of claim 4 , wherein an end of the light exposure unit is further distant from the substrate than an end of the feeding unit.6. The deposition apparatus of ...

ORGANIC ELECTRONIC MATERIAL, INK COMPOSITION CONTAINING SAME, AND ORGANIC THIN FILM, ORGANIC ELECTRONIC ELEMENT, ORGANIC ELETROLUMINESCENT ELEMENT, LIGHTING DEVICE, AND DISPLAY DEVICE FORMED THEREWITH

Provided are: an organic electronic material which can be easily multilayered and that can be used in substrates, such as resin, that cannot be processed at high temperatures; an ink composition containing the same; an organic thin film formed using said organic electronic material or said ink composition; and an organic electronic element and an organic EL element that are formed using said organic thin film and that have a superior luminous efficacy and emission lifespan than conventional elements. Specifically, provided are: an organic electronic material that is characterized by containing an oligomer or a polymer having a structure that branches into three or more directions and has at least one polymerizable substituent; an ink composition containing said organic electronic material; and an organic thin film prepared using the aforementioned organic electronic material. Further, provided are an organic electronic element and an organic electroluminescent element containing said organic thin film. 1. An organic electronic material comprising a polymer or oligomer containing a polymerizable substituent , wherein the polymerizable substituent comprises at least one selected from the group consisting of an oxetane group , a vinyl group , an epoxy group , an acrylate group and a methacrylate group.2. The organic electronic material according to claim 1 , wherein the polymer or oligomer has a structure branching in three or more directions.3. The organic electronic material according to claim 1 , wherein a polydispersity of the polymer or oligomer is greater than 1.0.4. The organic electronic material according to claim 1 , wherein the number average molecular weight of the polymer or oligomer is 3 claim 1 ,000 or more.5. An ink composition comprising the organic electronic material according to .6. An organic thin film produced using the organic electronic material according to .7. An organic electronic element comprising the organic thin film according to .8. An ...

THIENOTHIOPHENE - BORON (DONOR-ACCEPTOR) BASED MATERIALS FOR ORGANIC LIGHT EMITTING DIODES

The present invention discloses new molecules having defined structures of a series of thienothiophene (TT) and boron derivatives, light emitting devices of which are expected to be applied to organic light emitting diodes (OLED) 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)11. Formulation comprising the compounds given in .12. Use of or formulation comprising the compound given in as charge transport claim 10 , electrically conducting claim 10 , semiconducting claim 10 , photoconducting or light emitting material in electronic claim 10 , optical claim 10 , electrooptical claim 10 , electroluminescent or photoluminescent components or devices. The present invention relates to thienothiophene, dithienothiophene and boron derivatives with specified structures. They have potential of application to organic light emitting diodes (OLED).Organic electronic and optoelectronic materials have the attention of growing number of, particularly, physics and chemistry researchers for more than 50 years, the main mason of which is the higher possibility of modifying the chemical structures of the organic compounds. Thus, the properties of the materials could directly be affected. Until the mid-1980s, stability and performance of the devices made of organic materials fell short of those devices based on materials such as silicon or gallium arsenide. This has been changed with the appearance of a low voltage and efficient thin film light emitting diode. It provided the possibility of using organic thin films for a new generation of electronic and optoelectronic devices. It has now been proven that organic thin films an: useful in various applications and organic light emitting device (OLED) is the most successful one, which is used now in full-color displays.Generally, two groups of organic materials, small molecules and polymers, are used in electronic and optoelectronic devices and both can be processed from ...

Compositions containing hole carrier compounds and polymeric acids, and uses thereof

Described herein are ink compositions comprising hole carrier compounds typically conjugated polymers, polymeric acids, and organic solvent, and uses thereof, for example, in organic electronic devices. The polymeric acid comprises one or more repeating units comprising at least one alkyl or alkoxy group which is substituted by at least one fluorine atom and at least one sulfonic acid moiety.

SYNCHRONIZED PIEZOELECTRIC AND LUMINESCENCE MATERIAL AND ELEMENT INCLUDING THE SAME

A synchronized piezoelectric and luminescence (SPL) material includes a core layer including light-emitting particles and a shell layer which is attached onto a surface of the core layer and includes ligands having a piezoelectric property. Therefore, a piezoelectric property and a luminescent property can be simultaneously implemented using a single SPL material in which piezoelectric ligands and light-emitting particles are chemically coupled. 1. A synchronized piezoelectric and luminescence material comprising:a core layer including light-emitting particles; anda shell layer which is attached onto a surface of the core layer and includes ligands having a piezoelectric property.2. The synchronized piezoelectric and luminescence material of claim 1 , wherein the light-emitting particles are surrounded by the plurality of ligands claim 1 , andsome or all of the ligands are ligands having the piezoelectric property.3. The synchronized piezoelectric and luminescence material of claim 1 , wherein the ligand having the piezoelectric property is attached onto the surface of the core layer through a ligand exchange.5. The synchronized piezoelectric and luminescence material of claim 1 , wherein the light-emitting particles are at least one selected from the group consisting of perovskite crystals claim 1 , silicon (Si)-based crystals claim 1 , Group II-VI-based compound semiconductor crystals claim 1 , Group III-V-based compound semiconductor crystals claim 1 , Group IV-VI-based compound semiconductor crystals claim 1 , boron quantum dots claim 1 , carbon quantum dots claim 1 , and metal quantum dots.6. The synchronized piezoelectric and luminescence material of claim 5 , wherein the perovskite crystals have a structure of ABX(3D) claim 5 , ABX(0D) claim 5 , ABX(2D) claim 5 , ABX(2D) claim 5 , ABX(0D) claim 5 , ABBX(3D) claim 5 , ABX(2D) claim 5 , or ABX3(quasi-2D) claim 5 , wherein n is an integer of two to six claim 5 , A refers to a monovalent cation claim 5 , B refers ...

METHOD OF DOPING AN ORGANIC SEMICONUCTOR AND DOPING COMPOSITION

A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device. 1. A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor , and wherein an absorption maximum wavelength of the n-dopant reagent is shorter than any peak wavelength of the light.2. A method according to wherein an absorption maximum wavelength of the organic semiconductor is greater than 400 nm.3. A method according to wherein an absorption maximum wavelength of the n-dopant reagent is no more than 350 nm.4. A method according to wherein the light has a peak wavelength in the range of 400-700 nm.5. A method according to wherein the n-dopant reagent is (441 claim 1 ,3-dimethyl-2 claim 1 ,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine.6. A method according to wherein the organic semiconductor comprises a bond selected from a C═N group claim 1 , a nitrile group claim 1 , a C═O group and a C═S group.7. A method according to wherein the organic semiconductor is a polymer.8. A method according to wherein the polymer is a conjugated polymer.9. A method according to wherein the organic semiconductor has a lowest unoccupied molecular orbital level of no more than 3.2 eV from vacuum level.10. A method according to wherein a semi-occupied molecular orbital level of a radical derived from the n-dopant reagent is no more than 0.5 eV further from vacuum level than the lowest unoccupied molecular orbital level of the organic semiconductor.11. A method ...

ORGANIC SEMICONDUCTOR COMPOUND THIN FILM, METHOD OF FABRICATING THE SAME AND ELECTRONIC DEVICE USING THE SAME

Disclosed herein is an organic semiconductor compound thin film. The organic semiconductor compound thin film includes a conjugated organic material including an unshared electron pair-containing sulfur or nitrogen atom and exhibiting semiconductivity, and a polymeric organic acid bonded to the conjugated organic material through hydrogen bonding and protonation. The organic semiconductor compound thin film exhibits high electric charge mobility and interlayer solvent resistance to facilitate formation of a stack structure despite use of a wet process. 1. An organic semiconductor compound thin film comprising:a conjugated organic material comprising an unshared electron pair-containing sulfur or nitrogen atom and exhibiting semiconductivity; anda polymeric organic acid bonded to the conjugated organic material through hydrogen bonding and protonation.2. The organic semiconductor compound thin film according to claim 1 , wherein the conjugated organic material is P3HT claim 1 , PDVT-10 claim 1 , PQT claim 1 , or DTS(PTTh).3. The organic semiconductor compound thin film according to claim 1 , wherein the polymeric organic acid is PSS.4. A method of fabricating an organic semiconductor compound thin film claim 1 , comprising:preparing a first dispersion in which a conjugated organic material comprising an unshared electron pair-containing sulfur or nitrogen atom and exhibiting semiconductivity is dissolved in an organic solvent;forming a crystal seed in which the conjugated organic material and a polymeric organic acid are bonded to each other by adding the polymeric organic acid to the first dispersion; andforming an organic semiconductor compound thin film by coating the first dispersion having the crystal seed formed therein onto a solid matrix.5. The method according to claim 4 , wherein the conjugated organic material is bonded to the polymeric organic acid through hydrogen bonding and protonation.6. The method according to claim 4 , wherein the conjugated organic ...

SENSOR FOR DETECTION OF A TARGET SPECIES AND METHOD OF FORMING THE SAME

A sensor for detection of a target species is provided. The sensor includes a capture layer on an organic semi-conductor to which biomolecules may be bound. The capture layer polymer is deposited from a non-aqueous solution and the polymer is insoluble in water and has reactive groups for interaction with the analyte directly or via a conjugated species. Organic electronic devices, for example organic thin-film transistors having the capture layer are also provided. Use of a capture layer provides a low cost high quality biosensor which may be reliably produced in large quantities. 1. A method of making a layered structure for binding a biomolecule comprising:forming an organic semi-conductor layer by a solution deposition method;forming a capture layer on and in contact with the organic semiconductor layer comprising the step of depositing a solution comprising a polar, non-aqueous solvent and a dissolved capture polymer onto the organic semi-conductor layer wherein the capture polymer comprises moieties adapted to bind to a biomolecule.2. A method according to wherein the capture polymer is substantially insoluble in water.3. A method according to in which the capture polymer is deposited onto the first layer by a printing process or a coating process.4. A method according to wherein the polar nonaqueous solvent has a dielectric constant from 18 to 50.5. A method according to wherein the polar non-aqueous solvent is a protic solvent.6. A method according to wherein the organic semiconductor layer is formed from a formulation comprising a non-polar solvent and an organic semiconductor.7. A method according to wherein the non-polar solvent has a dielectric constant of less than 8.8. A method according to wherein the moieties are selected from amine groups; carboxyl groups; and salts thereof.9. A method according to wherein the capture polymer is a copolymer comprising repeat units that are substituted with at least one moiety adapted to bind to a biomolecule and ...

Organic Light-Emitting Display Device

An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank, thereby increasing lifespan. The organic light-emitting display device includes a first electrode protective pattern. 1. An organic light-emitting display device , comprising:a substrate having a plurality of sub-pixels;first electrodes provided respectively in the sub-pixels;a first electrode protective pattern provided on an edge of each of the first electrodes to be in contact with the first electrode;a bank configured to overlap a portion of the first electrode protective pattern so as to define an emission area;an organic light-emitting layer on the first electrode so as to correspond to the emission area; anda second electrode on the organic light-emitting layer.2. The device according to claim 1 , wherein a region of the bank that overlaps the portion of the first electrode protective pattern is located on the first electrode protective pattern.3. The device according to claim 1 , wherein the first electrode protective pattern is directly located only on the edge of the first electrode.4. The device according to claim 1 , wherein the first electrode protective pattern is directly located on a top and a side of the edge of the first electrode.5. The device according to claim 4 , wherein the first electrode protective pattern extends from the side of the edge of the first electrode so that an area between the first electrodes of the neighboring sub-pixels is filled with the first electrode protective pattern.6. The device according to claim 3 , wherein the first electrode protective pattern comprises two layers including a metal layer and a transparent metal oxide layer.7. The device according to claim 6 , wherein the metal layer is selected from Mo claim 6 , Ti claim 6 , Ta claim 6 , an alloy of any one thereof claim 6 , or a MoTi alloy.8. The device according to claim 3 , wherein the first electrode ...

DISPLAY DEVICE

A display device can include a substrate including first and second pixel regions; a first electrode in each of the first and second pixel regions; and a bank disposed at a boundary of each of the first and second pixel regions on the first electrode defining a first opening exposing a portion of the first electrode and a second opening within the bank defining a formation area of an emitting layer, the second opening is larger than the first opening, in which an area of the first opening in the first pixel region is smaller than an area of the first opening in the second pixel region, and an area of the second opening in the first pixel region is substantially same as an area of the second opening in the second pixel region. 1. A display device , comprising:a substrate including first and second pixel regions;a first electrode in each of the first and second pixel regions; anda bank disposed at a boundary of each of the first and second pixel regions on the first electrode defining a first opening exposing a portion of the first electrode and a second opening within the bank defining a formation area of an emitting layer, the second opening being larger than the first opening,wherein an area of the first opening in the first pixel region is smaller than an area of the first opening in the second pixel region, and an area of the second opening in the first pixel region is substantially same as an area of the second opening in the second pixel region.2. The display device according to claim 1 , wherein the bank includes a first bank pattern defining the first opening in each of the first and second pixel regions and a second bank pattern disposed on the first bank pattern claim 1 , and wherein the second bank pattern defines the second opening in each of the first and second pixel regions.3. The display device according to claim 1 , wherein the substrate further includes a third pixel region and the bank is disposed at a boundary of the third pixel region and defines ...

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

A light emitting diode and a method of fabricating the same are described. The light emitting diode has: a hole transport layer, an active layer and an electron transport layer. The active layer is disposed on the hole transport layer, and the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer. 1. A light emitting diode , comprising:a hole transport layer;an active layer disposed on the hole transport layer, wherein the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound; andan electron transport layer disposed on the active layer.2. The light emitting diode according to claim 1 , wherein the hole transport layer is formed of nickel oxide.3. The light emitting diode according to claim 1 , wherein the electron transport layer is formed of TPBi claim 1 , Bphen claim 1 , BCP claim 1 , TpPyPB claim 1 , DPPS claim 1 , or ZnO.4. The light emitting diode according to claim 1 , wherein the organic amine compound is selected from alkylamine or alkylenediamine.5. The light emitting diode according to claim 1 , wherein a structural formula of the perovskite structure compound is AMX claim 1 , wherein the A is selected from group IA metal claim 1 , H claim 1 , NH claim 1 , alkylamine claim 1 , or alkylenediamine; the M is Pb claim 1 , Sn claim 1 , or Ge; and the X is CI claim 1 , Br claim 1 , or I.6. A method of fabricating a light emitting diode claim 1 , comprising steps of:providing a hole transport layer;forming a perovskite structure compound layer on the hole transport layer;performing a modifying step, by an organic amine compound gas, on the perovskite structure compound layer to form an active layer, wherein the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound; andforming an electron transport layer on the active layer.7. The method of fabricating the ...

QUANTUM-DOT LIGHT EMITTING DEVICE COMPRISING SOLUTION PROCESSED CHARGE GENERATION JUNCTION AND MANUFACTURING METHOD THEREOF

Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed. 1forming a negative electrode;forming a first charge generation junction layer on the negative electrode;forming a quantum-dot light emitting layer on the first charge generation junction layer;forming a hole transport layer on the quantum-dot light emitting layer;forming a second charge generation junction layer on the hole transport layer; andforming a positive electrode on the second charge generation junction layer, wherein the first and second charge generation junction layers have a layer-by-layer structure wherein a p-type semiconductor layer and an n-type semiconductor layer are sequentially formed.. A method of fabricating a quantum-dot light emitting device, the method comprising: This application is a Divisional Application of U.S. application Ser. No. 16/336,354, filed on Mar. 25, 2019, which is a National Stage of International Application No. PCT/KR2017/008892, filed on Aug. 16, 2017, which claims the priority benefit of Korean Patent Application No. 10-2016-0123173, filed on Sep. 26, 2016 in the Korean Intellectual Property Office, the ...

SYSTEMS AND METHODS FOR BULK SEMICONDUCTOR SENSITIZED SOLID STATE UPCONVERSION

Systems and methods for upconversion based on bulk semiconductor sensitizers are provided. In some aspects, issues with previous upconversion approaches are overcome using bulk-semiconductor thin films as sensitizers for the triplet state to achieve efficient upconversion based on triplet-triplet annihilation. Varying the film thickness shifts the threshold of efficient upconversion to subsolar incident powers, enabling practical applications for solar energy harvesting. Systems and methods are provided for upconversion of light in a solid state electronic device, the methods including exposing a bulk semiconductor to a first light source comprising light of a first wavelength, wherein the bulk semiconductor is associated with an organic material capable of upconversion via triplet-triplet annihilation from triplet states in the organic material; and observing light emitted from the organic material at a second wavelength, wherein the second wavelength is shorter than the first wavelength. A one-step synthesis of solid-state upconversion devices is also provided. 2. The method according to claim 1 , wherein the first wavelength is between about 400 nm and about 1600 nm.3. The method according to claim 1 , wherein the bulk semiconductor comprises an organic or inorganic metal halide perovskite claim 1 , a cadmium telluride claim 1 , an indium phosphide claim 1 , an indium gallium arsenide claim 1 , a cadmium indium gallium selenide claim 1 , a transition metal dichalcogenide claim 1 , or a combination thereof.4. The method according to claim 1 , wherein the bulk semiconductor comprises a bandgap of from about 0.8 eV to about 2.5 eV.5. The method according to claim 1 , wherein the wherein the first wavelength is from about 10% to about 100% greater than the second wavelength.6. The method according to claim 1 , wherein the bulk semiconductor has an absorption coefficient at the first wavelength of from about 10cmto about 104 cm.9. The system according to claim 8 , ...

Cathode Interface Modification Material Composition, Preparation Method and Use Thereof

The present disclosure provides a cathode interface modification material composition, a preparation method and use thereof. In the present disclosure, a uniformly dispersed novel cathode interface modification material composition is obtained by adding a carbon nanomaterial to a cathode interfacial material and dispersing the same in a polar solvent. The cathode interface modification material composition of the present disclosure and the cathode interface modification layer prepared using the cathode interface modification material composition of the present disclosure can be used for the fabrication of various types of organic photoelectric devices. 1. A cathode interface modification material composition , comprising:(a) an alcohol solvent;(b) an organic cathode interfacial material, wherein the organic cathode interfacial material is alcohol soluble, wherein the organic cathode interfacial material is dissolved in the alcohol solvent to form a solution of the organic cathode interfacial material; and(c) a carbon nanomaterial, wherein the carbon nanomaterial is uniformly dispersed in the solution of the organic cathode interfacial material and has a maximum dimension of less than or equal to 5 μm.2. The cathode interface modification material composition according to claim 1 , wherein the alcohol solvent is selected from the group consisting of methanol claim 1 , ethanol claim 1 , propanol claim 1 , isopropanol claim 1 , n-butanol claim 1 , isobutanol claim 1 , tert-butanol claim 1 , pentanol claim 1 , isoamylol claim 1 , hexanol claim 1 , heptanol claim 1 , octanol claim 1 , nonanol claim 1 , decanol and combinations thereof.3. The cathode interface modification material composition according to claim 2 , wherein the alcohol solvent is selected from the group consisting of methanol claim 2 , ethanol claim 2 , propanol claim 2 , isopropanol and combinations thereof.4. The cathode interface modification material composition according to claim 1 , wherein the ...

METHOD OF MANUFACTURING INVERTED ORGANIC SOLAR MICROARRAY FOR APPLICATIONS IN MICROELECTROMECHANICAL SYSTEMS

The fabrication and characterization of large scale inverted organic solar array fabricated using all-spray process is disclosed. Solar illumination has been demonstrated to improve transparent solar photovoltaic devices. The technology using SAM has potential to revolute current silicon-based photovoltaic technology by providing a complete solution processable manufacturing process. The semi-transparent property of the solar module allows for applications on windows and windshields. The inventive arrays are more efficient than silicon solar cells in artificial light environments, permitting use of the arrays in powering microelectromechanical systems and in integration with microelectromechanical systems. 1. A method of manufacturing an organic solar photovoltaic array; comprising the steps: patterning ITO onto a substrate;', 'applying a Self Assembled Monolayer layer onto the etched ITO glass, wherein the Self Assembled Monolayer layer comprises N-propyl trimethoxysilane or aminopropyl triethoxysilane;', 'annealing the Self Assembled Molecule layer inside a glovebox;', 'spraying an active layer of P3HT and PCBM on the Self Assembled Molecule layer;', 'drying the solar photovoltaic cell in an antechamber under vacuum for at least 12 hours;', 'spraying a layer comprising poly (3,4) ethylenedioxythiophene:poly-styrenesulfonate mixed with 5 vol. % of dimethylsulfoxide on the active layer;', 'placing the solar photovoltaic cell into high vacuum for 1 h;', 'annealing the solar photovoltaic cell;', 'encapsulating the solar photovoltaic cell with a UV-cured epoxy; and, 'forming a plurality of organic solar photovoltaic cells, further comprising{'figref': [{'@idref': 'DRAWINGS', 'FIG. 6'}, {'@idref': 'DRAWINGS', 'FIG. 7'}], 'integrating the plurality of organic solar photovoltaic cells into an array as depicted in or .'}2. The method of claim 1 , wherein the patterning of the ITO further comprises:obtaining an ITO-coated substrate;patterning the ITO using photolithography; ...

ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND DISPLAY APPARATUS

Embodiments of the present invention disclose an organic electroluminescent display device and a display apparatus. The display device includes: a base substrate, and a first electrode, an organic light emitting layer and a second electrode arranged sequentially on the base substrate, the organic light emitting layer includes a first light emitting sub-layer and a second light emitting sub-layer arranged in stack, the first light emitting sub-layer having a coverage area less than that of the second light emitting sub-layer; a connecting layer is formed by an electron-transporting material and provided between the first light emitting sub-layer and the second light emitting sub-layer; and projection areas of a pattern of the connecting layer and the first light emitting sub-layer on the base substrate are overlapped with each other. It may suppress abnormal color of light from the organic light emitting layer and improve the luminescence efficiency of the display device. 1. An organic electroluminescent display device , comprising:a base substrate, anda first electrode, an organic light emitting layer and a second electrode arranged sequentially on the base substrate,wherein the organic light emitting layer comprises a first light emitting sub-layer and a second light emitting sub-layer arranged in stack, the first light emitting sub-layer having a coverage area less than that of the second light emitting sub-layer;wherein a connecting layer is formed by an electron-transporting material and provided between the first light emitting sub-layer and the second light emitting sub-layer; andwherein a projection area of a pattern of the connecting layer and a projection area of the first light emitting sub-layer on the base substrate are overlapped with each other.2. The organic electroluminescent display device according to claim 1 , wherein the first light emitting sub-layer is produced by a solution process and the second light emitting sub-layer is produced by a ...

n-Doped Electrically Conductive Organic Materials

A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV. 1. A composition comprisingan organic semiconductor comprising one or more aromatic or heteroaromatic moieties;one or more cations covalently bonded to the organic semiconductor, or to a second material; andat least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.2. The composition according to claim 1 , wherein the organic semiconductor has an electron affinity between 1.8 and 4.5 eV.3. The composition according to claim 1 , wherein the anion donor is capable of n-doping the composition to form an n-doped organic semiconductor having a work function between 1.5 eV and 4.8 eV.4. The composition according to claim 1 , wherein the at least one anion donor is ionically bound to the one or more cations.5. The composition according to claim 1 , wherein the organic semiconductor has a fully conjugated backbone; a partially conjugated backbone claim 1 , or a non-conjugated backbone and a conjugated aromatic or heteroaromatic moiety therefrom.6. The composition according to claim 1 , wherein the organic semiconductor is a polymer.7. The composition according to claim 1 , wherein the cation is covalently bound to the organic semiconductor.8. The composition according to claim 6 , wherein the cation is a pendent group of a repeat unit of the polymer or wherein the cation is a substituent of a repeat unit of the polymer.9. The composition according to claim 8 , wherein the repeat unit comprises a plurality of cations pendent therefrom.10. (canceled)11. The composition according to claim 1 , ...

Materials for electronic devices

The application relates to compounds having functional substituents in a specific spatial arrangement, to devices comprising same, and to the preparation and use thereof.

METHODS FOR STABILIZING PEROVSKITES

The present disclosure relates to a composition that includes a material of at least one of a perovskite structure, a perovskite-like structure, and/or a perovskitoid structure, where the material includes an isotope of an element, the isotope has more neutrons than protons, and the isotope is incorporated into the perovskite structure, the perovskite-like structure, and/or the perovskitoid structure. In some embodiments of the present disclosure, the isotope may make up between greater than 0% and 100% of the element. 1. A composition comprising:a material comprising at least one of a perovskite structure, a perovskite-like structure, or a perovskitoid structure, wherein:the material comprises an isotope of an element,the isotope has more neutrons than protons, andthe isotope is incorporated into the perovskite structure, the perovskite-like structure, or the perovskitoid structure.2. The composition of claim 1 , wherein the isotope makes up between greater than 0% and 100% of the element.3. The composition of claim 1 , wherein the isotope was added to the composition by a non-natural means.4. The composition of claim 1 , wherein the isotope comprises at least one of hydrogen claim 1 , carbon claim 1 , or nitrogen.5. The composition of claim 4 , wherein the isotope includes at least one of deuterium claim 4 , carbon-13 claim 4 , or nitrogen-15.6. The composition of claim 1 , wherein:{'sub': 3', '2', '6', '2', '4', '4', '3', '2', '9, 'the material has a stoichiometry comprising at least one of ABX, ABX, ABX, ABX, or ABX,'}A is a first cation, B is a second cation, and X is an anion, andthe first cation includes the isotope.7. The composition of claim 6 , wherein the first cation comprises at least one of methylammonium (MA) claim 6 , formamidinium (FA) claim 6 , ethylammonium claim 6 , propylammonium claim 6 , butylammonium claim 6 , hydrazinium claim 6 , acetylammonium claim 6 , dimethylammonium claim 6 , imidazolium claim 6 , guanidinium claim 6 , benzylammonium ...

DC GENERATION ENERGY HARVESTING SYSTEM AND MANUFACTURING METHOD THEREOF

An energy harvesting system for generating electrical energy, includes a first substrate, a perovskite layer formed on the first substrate, a charge transport layer disposed on the perovskite layer, and the charge transport layer being configured to slide over the perovskite layer, and a second substrate formed on the charge transport layer. 1. An energy harvesting system for generating electrical energy , the energy harvesting system comprising:a first substrate;a perovskite layer formed on the first substrate;a charge transport layer disposed on the perovskite layer, and the charge transport layer being configured to slide over the perovskite layer; anda second substrate formed on the charge transport layer.2. The energy harvesting system of claim 1 , wherein the perovskite layer and the charge transport layer form a PN junction.3. The energy harvesting system of claim 1 , wherein the electrical energy is generated by friction occurring as the perovskite layer slides over the charge transport layer.4. The energy harvesting system of claim 1 , wherein the electrical energy is generated by pressure applied vertically on the perovskite layer and the charge transport layer.5. The energy harvesting system of claim 4 , wherein the electrical energy is generated as the perovskite layer's crystal structure is changed by the pressure.6. The energy harvesting system of claim 1 , wherein the perovskite layer comprises a material having a chemical formula of ABXor ABX claim 1 , where{'sub': ['1', '24'], '#text': 'A is a C-Csubstituted or unsubstituted alkyl group, and when the A is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group,'}B includes a metal cation selected from the group consisting of Pb, Bi, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, andX includes a halide anion or a chalcogenide anion.7. The energy harvesting system of claim 1 , wherein an amount of the ...

ORGANIC EMITTING DIODE AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME

The present invention provides an organic emitting diode including a first electrode; a second electrode facing the first electrode; an emitting material layer between the first and second electrodes; and an intervening layer between the emitting material layer and the second electrode and including a base material and an electron injection material, wherein the intervening layer contacts the second electrode. 123-. (canceled)24. An organic emitting diode , comprising:a first electrode;a second electrode facing the first electrode;an emitting material layer between the first and second electrodes; and a base material; and', 'an electron injection material,, 'an intervening layer between the emitting material layer and the second electrode, the intervening layer includingwherein the intervening layer contacts the second electrode,wherein the base material is a host material of the emitting material layer,wherein the electron injection material is an alkali metal, and a LUMO energy level of about 3.0 eV to 2.6 eV, and', 'a triplet energy level of about 2.0 eV to about 2.5 eV., 'wherein the intervening layer has25. The organic emitting diode according to claim 24 , wherein the intervening layer has an electron mobility of about 10cm/Vs to about 10cm/Vs.26. The organic emitting diode according to claim 24 , wherein the electron injection material has a first density in a lower portion claim 24 , which is adjacent to the emitting material layer claim 24 , of the intervening layer and a second density claim 24 , which is larger than the first density claim 24 , in an upper portion claim 24 , which is adjacent to the second electrode claim 24 , of the intervening layer.27. An organic light emitting diode display device claim 24 , comprising:a substrate including a plurality of sub-pixels;a transistor in each sub-pixel; and a first electrode;', 'a second electrode facing the first electrode;', 'an emitting material layer between the first and second electrodes; and', a base ...

PHOTOACTIVE DEVICES INCLUDING PORPHYRINOIDS WITH COORDINATING ADDITIVES

Coordinating additives are included in porphyrinoid-based materials to promote intermolecular organization and improve one or more photoelectric characteristics of the materials. The coordinating additives are selected from fullerene compounds and organic compounds having free electron pairs. Combinations of different coordinating additives can be used to tailor the characteristic properties of such porphyrinoid-based materials, including porphyrin oligomers. Bidentate ligands are one type of coordinating additive that can form coordination bonds with a central metal ion of two different porphyrinoid compounds to promote porphyrinoid alignment and/or pi-stacking. The coordinating additives can shift the absorption spectrum of a photoactive material toward higher wavelengths, increase the external quantum efficiency of the material, or both. 1. An organic photoactive device , comprising:a substrate;first and second electrodes supported by the substrate; anda donor material and an acceptor material arranged together to form a heterojunction between the first and second electrodes, wherein at least one of the donor or acceptor materials includes a metallated porphyrinoid and at least one coordinating additive.2. The organic photoactive device of claim 1 , wherein the porphyrinoid comprises a porphyrin or a phthalocyanine or both.3. The organic photoactive device of claim 1 , wherein the porphyrinoid comprises a covalent porphyrin dimer or trimer.4. The organic photoactive device of claim 3 , wherein the dimer or trimer further comprises fused aromatic terminal groups.5. The organic photoactive device of claim 1 , wherein the porphyrinoid is metallated with zinc.6. The organic photoactive device of claim 1 , wherein the at least one coordinating additive comprises a fullerene compound.7. The organic photoactive device of claim 6 , wherein the fullerene compound is PCBM.8. The organic photoactive device of claim 1 , wherein the at least one coordinating additive includes ...

ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Organic electroluminescent element capable of conveniently and precisely establishing the emission color of the element. The organic electroluminescent element includes a pair of electrodes and a light-emitting layer provided between the electrodes and presents an emission color at the coordinate Ao (Xo, Yo) in CIE 1931 chromaticity coordinate system. The light-emitting layer contains in the same layer, a light emitting material A1 that presents an emission color at the coordinate A1 (x1, y1) in the CIE 1931 chromaticity coordinate system and a light emitting material A2 that presents an emission color at the coordinate A2 (x2, y2) in the CIE 1931 chromaticity coordinate system; a distance Lbetween the coordinates Ao (Xo, Yo) and A1 (x1, y1) in the CIE 1931 chromaticity coordinate system satisfies L≦0.20; and a distance Lbetween the coordinates A1 (x1, y1) and A2 (x2, y2) in the CIE 1931 chromaticity coordinate system satisfies 0.13≦L≦0.35 s. 1. An organic electroluminescent element that presents an emission color at the coordinate Ao (Xo , Yo) in CIE 1931 chromaticity coordinate system , comprising:a pair of electrodes; anda light-emitting layer provided between the electrodes, whereinthe light-emitting layer comprises in the same layer, a light emitting material A1 that presents an emission color at the coordinate A1 (x1, y1) in CIE 1931 chromaticity coordinate system and a light emitting material A2 that presents an emission color at the coordinate A2 (x2, y2) in CIE 1931 chromaticity coordinate system,{'sub': Ao-A1', 'Ao-A1, 'a distance Lbetween the coordinates Ao (Xo, Yo) and A1 (x1, y1) in CIE 1931 chromaticity coordinate system satisfies L≦0.20, and'}{'sub': A1-A2', 'A1-A2, 'a distance Lbetween the coordinates A1 (x1, y1) and A2 (x2, y2) in CIE 1931 chromaticity coordinate system satisfies 0.13≦L≦0.35.'}2. The organic electroluminescent element of claim 1 , wherein the light-emitting layer comprises in the same layer claim 1 , a light emitting material A3 ...

HIGH EFFICIENCY LARGE AREA PEROVSKITE SOLAR CELLS AND PROCESS FOR PRODUCING THE SAME

The present invention relates to a method for producing a solid state solar cell, including the steps of providing a conductive support layer or current collector, applying a metal oxide layer on the conducting support layer, applying at least one sensitizer layer onto the metal oxide layer or onto a first optional layer covering the metal oxide layer, the first optional layer including a charge transporting layer, applying a second optional layer onto the sensitizer layer, the second optional layer being selected from a charge transporting layer, a protective layer, or a combination of both layers, and providing a counter electrode or a metal electrode onto the sensitizer layer or the second optional layer. The at least one sensitizer layer includes an organic-inorganic or metal halide perovskite and is treated by the application of a vacuum before the annealing of the sensitizer. 117.-. (canceled)18. A method for producing a solid state solar cell comprising the steps of:providing a conductive support layer or current collector;applying a metal oxide layer on the conductive support layer; providing the organic-inorganic perovskite or a metal halide perovskite under a film of one perovskite pigment or mixed perovskite pigments or one or more perovskite pigments with mixed cations and anions onto the preceding layer being the metal oxide layer;', 'applying a vacuum to the organic-inorganic perovskite film or metal halide perovskite film deposited onto said preceding layer; and', 'annealing the organic-inorganic perovskite film or metal halide perovskite film having been treated by vacuum; and, 'applying one sensitizer layer comprising an organic-inorganic perovskite or a metal halide perovskite onto the metal oxide layer comprisingproviding a counter electrode or a metal electrode onto the sensitizer layer.19. The method of further comprising applying a first layer comprising a charge transporting layer onto the metal oxide layer before applying the sensitizer layer ...

QLED DISPLAY PANEL AND PREPARATION METHOD THEREOF AND DISPLAY APPARATUS

Disclosed are a QLED display panel and a preparation method thereof and a display apparatus. The QLED display panel includes: a first and second substrates oppositely disposed; a first electrode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer and a second electrode formed between the first and second substrates and disposed sequentially along a direction from the first substrate to the second substrate; and a first ionic coordination compound layer formed on a side facing quantum dot luminescent layer, of hole transport layer. The first ionic coordination compound layer includes a first positive and a first negative ion portions; the first positive ion portion is on a side close to hole transport layer, of first ionic coordination compound layer, and the first negative ion portion is on a side close to quantum dot luminescent layer, of first ionic coordination compound layer. 1. A Quantum Dot Light Emitting Diode (QLED) display panel , comprising:a first substrate and a second substrate which are oppositely disposed;a first electrode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer and a second electrode which are formed between the first substrate and the second substrate and are disposed sequentially along a direction from the first substrate to the second substrate; and the QLED display panel further comprising:a first ionic coordination compound layer formed on a side of the hole transport layer facing the quantum dot luminescent layer, the first ionic coordination compound layer comprises a first positive ion portion and a first negative ion portion;wherein the first positive ion portion is on a side close to the hole transport layer, of the first ionic coordination compound layer, and the first negative ion portion is on a side close to the quantum dot luminescent layer, of the first ionic coordination compound layer.2. The QLED display ...

PIXEL DEFINING LAYER, DISPLAY SUBSTRATE AND MANUFACTURING METHODS THEREOF

The present disclosure provides a pixel defining layer, a display substrate and manufacturing methods thereof, and relates to the field of display technology. The pixel defining layer is located on a base substrate, and configured to define a plurality of pixel regions. The pixel defining layer includes: a defining layer body, and a heat generating substance located in the defining layer body. The heat generating substance is configured to cause a temperature on a side of the defining layer body proximal to the base substrate to be lower than a temperature on a side of the defining layer body distal from the base substrate. 1. A pixel defining layer , the pixel defining layer being located on a base substrate and configured to define a plurality of pixel regions; wherein the pixel defining layer comprises a defining layer body , and a heat generating substance located in the defining layer body , andwherein the heat generating substrate is configured to cause a temperature on a side of the defining layer body proximal to the base substrate to be lower than a temperature on a side of the defining layer body distal from the base substrate.2. The pixel defining layer according to claim 1 , wherein the heat generating substance is configured to cause a temperature difference between the side of the defining layer body proximal to the base substrate and the side of the defining layer body distal from the base substrate to be greater than 30° C.3. The pixel defining layer according to claim 1 , wherein the heat generating substance is distributed in the entire defining layer body claim 1 , and a content of the heat generating substance on the side proximal to the base substrate is lower than a content of the heat generating substance on the side distal from the base substrate.4. The pixel defining layer according to claim 1 , wherein the heat generating substance is only distributed on the side of the defining layer body distal from the base substrate.5. The pixel ...

NON-AQUEOUS DISPERSIONS OF A CONDUCTIVE POLYMER

A dispersion of a conductive polymer and a polyanion in a non-aqueous medium further includes a compound including an acid sensitive functional group selected from the group consisting of a ketal, an acetal, an aminal, a hemi-ketal, a hemi-acetal, a hemi-aminal, a thioacetal, an amide acetal, an orthoester, an orthoether, an enolester, an enolether, and an enolamine. 115-. (canceled)16. A dispersion comprising:a conductive polymer and a polyanion dispersed in a non-aqueous medium; anda compound including an acid sensitive functional group, the compound selected from the group consisting of a ketal, an acetal, an aminal, a hemi-ketal, a hemi-acetal, a hemi-aminal, a thioacetal, an amide acetal, an orthoester, an orthoether, an enolester, an enolether, and an enolamine.17. The dispersion according to claim 16 , wherein the compound is selected from the group consisting of a ketal claim 16 , an acetal claim 16 , and an orthoester.19. The dispersion according to claim 18 , wherein Ra claim 18 , Rb claim 18 , Rb claim 18 , and Rd are substituted or unsubstituted C1-C6 alkyl groups.20. The dispersion according to claim 16 , wherein the compound claim 16 , upon reaction with water claim 16 , forms reaction products having a boiling point Bp at atmospheric pressure below 200° C.21. The dispersion according to claim 16 , wherein the conductive polymer is a polymer or copolymer of a substituted or unsubstituted thiophene.23. The dispersion according to claim 16 , wherein the polyanion is poly(styrenesulfonate).24. The dispersion according to claim 16 , wherein the non-aqueous medium is selected from the group consisting of ethanol claim 16 , acetone claim 16 , methyl ethyl ketone (MEK) claim 16 , ethylacetate claim 16 , isopropylalcohol (IPA) claim 16 , toluene claim 16 , butylacetate claim 16 , propylacetate claim 16 , and mixtures thereof.25. The dispersion according to claim 16 , further comprising a polyoxyethylene alkylamine dispersant.26. A method for preparing a ...

Polymer-Perovskite Films, Devices, and Methods

Provided herein are perovskite-polymer films, methods of forming polymer-perovskite films, and devices including polymer-perovskite films. The polymer-perovskite films may include a plurality of methylammonium lead chloride (CHNHPbCl) nanopillar crystals embedded in a polymer matrix. The devices can be optoelectronic devices, such as light emitting diodes, which include polymer-perovskite films. The polymer-perovskite films of the devices can be hole transport layers in the devices. The methods of making films may include spin casting a precursor solution followed by thermal annealing. 1. A polymer-perovskite film comprising:{'sub': 3', '3', '3, 'a plurality of methylammonium lead chloride (CHNHPbCl) nanopillar crystals embedded in a polymer matrix.'}2. The polymer-perovskite film of claim 1 , wherein the nanopillar crystals have an average length of about 25 to about 250 nm claim 1 , and a width of about 2 to about 10 nm.3. The polymer-perovskite film of claim 1 , wherein the nanopillar crystals are substantially uniformly dispersed in the polymer matrix.4. The polymer-perovskite film of claim 1 , wherein the nanopillar crystals are oriented substantially perpendicularly to a surface of the polymer matrix.5. An optoelectronic device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the polymer-perovskite film of , wherein the polymer-perovskite film is a hole transport layer.'}6. The optoelectronic device of claim 5 , further comprising:an electrode;a counter electrode; andan electroluminescent layer or a photoactive layer;wherein the hole transport layer and the electroluminescent layer or the photoactive layer are arranged between the electrode and the counter electrode, and the hole transport layer is arranged between the electrode and the electroluminescent layer or the photoactive layer.7. The optoelectronic device of claim 6 , wherein the electrode is an anode comprising indium tin oxide (ITO) claim 6 , and the counter electrode is a cathode ...

Optical waveguide display device, manufacturing method and driving method thereof

An optical waveguide display device includes a substrate and a cover plate formed into a cell assembly, and a first filler layer and a second filler layer between the substrate and the cover plate, the first filler layer is closer to the cover plate than the second filler layer, the first filler layer includes liquid crystals and a high molecular polymer, and the second filler layer are liquid crystals.

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification. 1. (canceled)2. A light-emitting device comprising:a base insulating film over a substrate, the base insulating film comprising a silicon oxide film, a silicon nitride film, or a silicon oxynitride film;a semiconductor layer over the base insulating film, the semiconductor layer comprising crystalline silicon film;a gate insulating film over the semiconductor layer, the gate insulating film comprising silicon;a gate electrode over the gate insulating film;an interlayer insulating film over the gate insulating film and the gate electrode;a first electrode over the interlayer insulating film, the first electrode comprising indium tin oxide;a bank covering an edge of the first electrode;a first organic compound layer over the first electrode and the bank; anda second electrode over the first organic compound layer, the second electrode comprising magnesium and silver,wherein the first organic compound layer comprises a first region having a first thickness and a second region having a second thickness, andwherein the first thickness is larger than the second thickness.3. The light-emitting device according to claim 2 , wherein the substrate is a flexible substrate.4. The light-emitting device according to claim 2 , wherein the substrate is a plastic substrate.5. The light-emitting device according to claim 2 , ...

THIN FILM TRANSISTORS COMPRISING CARBON NANOTUBE NETWORKS ENCAPSULATED BY A POLYMERIC LAYER AND METHODS FOR THE MANUFACTURE THEREOF

The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors. 1. A thin film transistor comprising:a source electrode, a drain electrode and a gate electrode;a semiconducting channel comprising a network of carbon nanotubes, the carbon nanotubes electrically coupled to the source electrode and drain electrode and electrically insulated from, but capacitively coupled to, the gate electrode; anda polymeric layer encapsulating the carbon nanotubes, the polymeric layer comprising a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are selected to provide at least one target electrical property of the thin film transistor.2. The thin film transistor of claim 1 , wherein the first monomeric unit is 2-vinylpyridine claim 1 , acrylic acid or a glucopyranose in which at least a portion of the hydrogens of the hydroxyl groups are replaced with —CHC(O)ONa.3. The thin film transistor of claim 2 , wherein the second monomeric unit is not present and the polymeric layer comprises poly(2-vinylpyridine) claim 2 , poly(acrylic acid) or sodium carboxymethyl cellulose.4. The thin film transistor of claim 1 ...

Method for manufacturing membrane layers of organic solar cells by roll to roll coating

A method for manufacturing membrane layers of organic solar cells by roll to roll coating utilizes a roll to roll process for manufacturing an electron transferring layer and an active layer of the organic solar cells is disclosed. The roll to roll process adopted by the method cooperates with a particular solvent and accompanies a parameter control such as temperature and processing time during the sintering and baking steps. The method utilizes a slot-die coating technique in the interim, whereby a membrane layer of the solar cells can be manufactured with a large area for reducing the cost, and the formed membrane layers can have a good efficiency.

METHODS FOR FORMING A PEROVSKITE SOLAR CELL

A perovskite thin film and method of forming a perovskite thin film are provided. The perovskite thin film includes a substrate, a hole blocking/electron transport layer, and a sintered perovskite layer. The method of forming the perovskite solar cell includes depositing a perovskite layer onto a substrate and processing (for example, by sintering) the perovskite layer with intense pulsed light to initiate a radiative thermal response that is enabled by an alkyl halide additive. 1. A method of forming a perovskite thin film , comprising:depositing a perovskite layer onto a substrate, and{'sup': 2', '2, 'processing the perovskite layer with 1-10 pulses of intense pulsed light, the intense pulsed light having a wavelength of about 150 nm to about 1000 nm, an energy of about 1 J/cmto about 35 J/cm, and each pulse having a duration of about 1 microsecond to about 5 milliseconds;'}wherein the perovskite layer comprises a mixed halide perovskite formed from a perovskite precursor composition including an alkyl halide having 1 to 20 carbons.2. The method of claim 1 , wherein the perovskite layer is an organometallic halide having the formula ABX claim 1 , wherein A represents an organic group claim 1 , B represents a metal claim 1 , and X represents at least one halide.3. The method of claim 2 , wherein the metal is chosen from the group lead and tin.4. The method of claim 2 , wherein the alkyl halide is represented by a formula RX claim 2 , wherein R represents an alkyl group comprising 1-20 carbon atoms and X represents the at least one halide claim 2 , wherein the at least one halide is chosen from the group chloride claim 2 , bromide claim 2 , iodide claim 2 , and fluoride.5. The method of claim 4 , wherein the at least one halide comprises ClI or BrI.6. The method of claim 1 , wherein the perovskite precursor composition further includes one or more of PbI claim 1 , Pb(Ac) claim 1 , MAI and MACl.7. The method of claim 1 , wherein 1 to 5 pulses of intense pulsed light ...