19-09-2013 дата публикации
Номер: US20130243940A1
Принадлежит:
Devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The devices include a metal substrate, a diffusion barrier layer on the metal substrate, one or more insulator layers on the diffusion barrier layer, and an antenna and/or inductor on the one or more insulator layer(s). The method includes forming a diffusion barrier layer on the metal substrate, forming one or more insulator layers on the diffusion barrier layer; and forming an antenna and/or inductor on an uppermost one of the insulator layer(s). The antenna and/or inductor is electrically connected to at least one of the diffusion barrier layer and/or the metal substrate. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into device layers formed thereon. 1. A device , comprising:a) a metal substrate, including one or more outermost conductive layer(s),b) one or more insulator layer(s) on said conductive layer(s), andc) an antenna and/or inductor on the one or more insulator layer(s), wherein said antenna and/or inductor is in electric contact with the metal substrate.2. The device of claim 1 , further comprising an electrically conducting strap electrically connecting the antenna and/or inductor and the metal substrate.3. The device of claim 1 , wherein the one or more insulator layer(s) have at most two openings claim 1 , contact holes or vias.4. The device of claim 3 , wherein the one or more insulator layer(s) comprises a bulk dielectric layer having a thickness of from about 1 claim 3 ,000 to about 10 claim 3 ,000 Å.5. The device of claim 3 , comprising a capacitor dielectric layer in a first opening claim 3 , contact hole or via in the bulk dielectric layer.6. The device of claim 5 , wherein said capacitor dielectric layer(s) has a thickness of about 20 to about 500 Å.7. The device of claim 1 , wherein said one or more insulator layer(s) comprises silicon oxide claim 1 , silicon nitride claim 1 , silicon ...
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