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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 2058. Отображено 100.
01-03-2012 дата публикации

Electromechanical systems piezoelectric contour mode differential resonators and filters

Номер: US20120050236A1
Автор: Changhan Yun, Chengjie Zuo, Chi Shun Lo, Jonghae Kim, Sang-June Park, Sanghoon Joo
Принадлежит: Qualcomm Mems Technologies Inc

This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a contour mode resonator device includes a first conductive layer with a plurality of first layer electrodes including a first electrode at which a first input signal can be provided and a second electrode at which a first output signal can be provided. A second conductive layer includes a plurality of second layer electrodes including a first electrode proximate the first electrode of the first conductive layer and a second electrode proximate the second electrode of the first conductive layer. A second signal can be provided at the first electrode or the second electrode of the second conductive layer to cooperate with the first input signal or the first output signal to define a differential signal. A piezoelectric layer is disposed between the first conductive layer and the second conductive layer. The piezoelectric layer includes a piezoelectric material. The piezoelectric layer is substantially oriented in a plane and capable of movement in the plane responsive to an electric field between the first electrodes or the second electrodes.

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Номер записи: 1
07-06-2012 дата публикации

Wide bandwidth slanted-finger contour-mode piezoelectric devices

Номер: US20120139665A1
Автор: Carlos R Perez, Gianluca Plazza
Принадлежит: University of Pennsylvania Penn

Contour-mode piezoelectric devices and methods of forming contour mode piezoelectric devices. The contour mode piezoelectric device includes a piezoelectric film having first and second surfaces and suspended so that it is spaced away from a substrate. The contour mode piezoelectric device also includes first and second patterned electrodes respectively disposed on the first and second surfaces of the piezoelectric film, at least one of the first and second patterned electrodes having variable width along a length thereof.

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Номер записи: 2
18-10-2012 дата публикации

Resonator and method of controlling the same

Номер: US20120262242A1
Автор: Casper Van Der Avoort, Jozef Thomas Martinus Van Beek
Принадлежит: NXP BV

A resonator in which in addition to the normal anchor at a nodal point, a second anchor arrangement is provided and an associated connecting arm between the resonator body and the second anchor arrangement. The connecting arm connects to the resonator body at a non-nodal point so that it is not connected to a normal position where fixed connections are made. The connecting arm is used to suppress transverse modes of vibration.

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Номер записи: 3
08-11-2012 дата публикации

Microelectromechanical systems (mems) resonators and related apparatus and methods

Номер: US20120280594A1
Автор: David M. Chen, Guiti Zolfagharkhani, Jan H. Kuypers, Jason Goodelle, Klaus Juergen Schoepf, Pritiraj Mohanty, Reimund Rebel
Принадлежит: Sand 9 Inc

Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

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Номер записи: 4
07-02-2013 дата публикации

Unreleased mems resonator and method of forming same

Номер: US20130033338A1
Автор: Dana Weinstein, Wentao Wang
Принадлежит: Massachusetts Institute of Technology

A microelectromechanical (MEM) resonator includes a resonant cavity disposed in a first layer of a first solid material disposed on a substrate and a first plurality of reflectors disposed in the first layer in a first direction with respect to the resonant cavity and to each other. Each of the first plurality of reflectors comprises an outer layer of a second solid material and an inner layer of a third solid material. The inner layer of each of the first plurality of reflectors is adjacent in the first direction to the outer layer of each reflector and to either the outer layer of an adjacent reflector or the resonant cavity.

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Номер записи: 5
28-02-2013 дата публикации

Mems pressure sensor

Номер: US20130047746A1
Автор: Keiji Onishi, Kunihiko Nakamura, Takehiko Yamakawa, Tomohiro Iwasaki
Принадлежит: Individual

A MEMS resonator 100 including a substrate 112 ; an vibrator 102 including an mechanically vibrating part and a fixed part; at least one electrode 108 that is close to the vibrator and has an area overlapping with the vibrator across a gap 109 in a direction perpendicular to a surface of the substrate; and a pressure transferring mechanism to displace the at least one electrode according to an externally applied pressure so as to change the gap; is connected to a detection circuit that detects transmission characteristics of an AC signal from an input electrode to an output electrode, the input and output electrodes being one and the other of the vibrator 102 and the at least one electrode 108 , and the pressure is detected based on the transmission characteristics of the AC signal that is detected by the detection circuit.

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Номер записи: 6
16-05-2013 дата публикации

Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure

Номер: US20130119491A1
Автор: Anthony K. Stamper, Stephen E. Luce
Принадлежит: International Business Machines Corp

Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming a via through the insulator material and exposing a material underlying the amorphous silicon beam. The method further includes providing a sacrificial material in the via and over the amorphous silicon beam. The method further includes providing a lid on the sacrificial material and over the insulator material. The method further includes venting, through the lid, the sacrificial material and the underlying material to form an upper cavity above the amorphous silicon beam and a lower cavity below the amorphous silicon beam, respectively.

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Номер записи: 7
13-06-2013 дата публикации

Inter-digital bulk acoustic resonator

Номер: US20130147568A1
Автор: Chin-Hung Wang, Feng-Chia Hsu, Pin Chang, Tsun-Che Huang
Принадлежит: Industrial Technology Research Institute ITRI

An inter-digital bulk acoustic resonator including a resonating structure, one or more input electrodes, one or more output electrodes, a substrate, and a supporting structure disposed on the substrate is provided. The resonating structure includes one or more resonating beams and a coupling beam. The resonating beams are connected at opposite two sides of the coupling beam respectively. The input electrodes and the output electrodes are arranged among the resonating beams in interlace. The input electrodes, the output electrodes, and the resonating beams are parallel to each other. Two ends of the coupling beam are connected to the supporting structure, such that the resonating structure is supported on the substrate.

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Номер записи: 8
12-09-2013 дата публикации

Piezoelectric resonator with airgap

Номер: US20130235001A1
Автор: Changhan Hobie Yun, Chengjie Zuo, Chi Shun Lo, Je-Hsiung Jeffrey Lan, Jonghae Kim
Принадлежит: Qualcomm Mems Technologies Inc

This disclosure provides implementations of electromechanical systems (EMS) piezoelectric resonator structures, transformers, devices, apparatus, systems, and related processes. In one aspect, a piezoelectric resonator structure includes a first conductive electrode layer, a second conductive electrode layer, and a piezoelectric layer arranged between the first and second conductive layers. In some implementations, the surface of the piezoelectric layer adjacent to the first conductive layer is separated from the first conductive layer by a first gap, and the surface of the piezoelectric layer adjacent to the second conductive layer is separated from the second conductive layer by a second gap. In some implementations, the resonator structure further includes an encapsulation layer arranged over the second conductive layer and providing physical support to the second conductive layer.

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Номер записи: 9
30-01-2014 дата публикации

Resonator Electrode Shields

Номер: US20140028410A1
Автор: Aaron Partridge, David Raymond Pedersen, Thor Juneau
Принадлежит: Sitime Corp

A MEMS resonator system that reduces interference signals arising from undesired capacitive coupling between different system elements. The system, in one embodiment, includes a MEMS resonator, electrodes, and at least one resonator electrode shield. In certain embodiments, the resonator electrode shield ensures that the resonator electrodes interact with either one or more shunting nodes or the active elements of the MEMS resonator by preventing or reducing, among other things, capacitive coupling between the resonator electrodes and the support and auxiliary elements of the MEMS resonator structure. By reducing the deleterious effects of interfering signals using one or more resonator electrode shields, a simpler, lower interference, and more efficient system relative to prior art approaches is presented.

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Номер записи: 10
27-03-2014 дата публикации

Acoustic structure comprising at least one resonator and at least one cointegrated capacitor in one and the same piezoelectric or ferroelectric layer

Номер: US20140085020A1
Автор: Alexandre Reinhardt, Jean-Baptiste David, Julie Abergel
Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

An acoustic structure, comprising at least one acoustic resonator exhibiting at least one resonant frequency in a band of operating frequencies and an integrated capacitor, further comprises: a stack of layers, comprising at least one active layer of piezoelectric material or of ferroelectric material; the resonator being frequency tunable and being produced by a first subset of layers of the stack comprising the at least one active layer and at least two electrodes; the integrated capacitor being produced by a second subset of layers comprising the active layer and at least two electrodes; the first and second subsets of layers being distinguished by a modification of layers so as to exhibit different resonant frequencies.

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Номер записи: 11
04-01-2018 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20180006628A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. A filter module for providing a pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA); anda capacitor module coupled in parallel to the AWR, the capacitor module configured to modify the transduction of the electrical signal by the AWR.2. A filter module for providing a tunable pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA);a first capacitor module coupled in parallel to the AWR, the first capacitor module configured to modify the transduction of the electrical signal by the AWR; anda second capacitor module coupled in series to the AWR and the first capacitor module, the second capacitor module configured to modify the transduction of the electrical signal by the AWR.3. The filter module of claim 1 , wherein the capacitor modifies at least one of the AFA and RFA.4. The filter module of claim 2 , wherein the first capacitor module or the second capacitor module or a combination thereof modifies at least one of the RFA and AFA.5. The filter module of claim 1 , wherein the capacitor module is a variable capacitor.6. The filter module of claim 2 , wherein at least one of the first capacitor module and the second capacitor module are variable capacitors.7. A filter module for providing a switchable pass-band and a tunable rejection band claim 2 , the filter module comprising:an acoustic wave resonator (AWR), the AWR having a ...

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Номер записи: 12
03-01-2019 дата публикации

GALLIUM NITRIDE STRUCTURE, PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT, AND RESONATOR USING PIEZOELECTRIC ELEMENT

Номер: US20190007026A1
Автор: Aida Yasuhiro, AKIYAMA Morito, Mizuno Takaaki, Nagase Toshimi, Uehara Masato, UMEDA Keiichi
Принадлежит:

A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer. 1. A gallium nitride structure , comprising:a substrate;a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; anda first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing hafnium as a main component thereof the at least one hafnium layer in contact with the gallium nitride layer.2. The gallium nitride structure according to claim 1 , wherein the at least one hafnium layer includes:a first hafnium layer that is in contact with the substrate;a second hafnium layer that is in contact with the gallium nitride layer; anda metal layer having a resistivity lower than hafnium between the first hafnium layer and the second hafnium layer.3. The gallium nitride structure according to claim 2 , wherein the metal layer is an aluminum layer containing aluminum as a main component thereof.4. The gallium nitride structure according to claim 2 , further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween.5. The gallium nitride structure according to claim 1 , further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween.6. The gallium nitride structure according to claim 1 , wherein the substrate comprises a degenerated n-type Si.7. A resonator comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a vibration portion comprising the gallium nitride structure according to ;'}a ...

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Номер записи: 13
27-01-2022 дата публикации

Resonance device

Номер: US20220029598A1
Автор: Ryota Kawai, Ville Kaajakari, Yoshihisa Inoue
Принадлежит: Murata Manufacturing Co Ltd

A resonance device is provided that includes a resonator having a base, a vibrating arm extending from one end of the base along a first direction, a frame disposed around at least a part of the vibrating arm and holding the vibrating arm such that the vibrating arm is configured to vibrate, and a support arm connecting the base to the frame. Moreover, a first substrate is provided that includes a first recess forming at least a part of a vibration space for the resonator and a first limiting portion provided away from the support arm by a first distance in a thickness direction, in which the first distance is smaller than a distance between a bottom surface of the first recess and the vibrating arm in the thickness direction of the first substrate.

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Номер записи: 14
11-01-2018 дата публикации

Low-loss tunable radio frequency filter

Номер: US20180013403A1
Автор: Balam A. Willemsen, Genichi Tsuzuki
Принадлежит: Resonant Inc

A method of constructing an RF filter comprises designing an RF filter that includes a plurality of resonant elements disposed, a plurality of non-resonant elements coupling the resonant elements together to form a stop band having a plurality of transmission zeroes corresponding to respective frequencies of the resonant elements, and a sub-band between the transmission zeroes. The non-resonant elements comprise a variable non-resonant element for selectively introducing a reflection zero within the stop band to create a pass band in the sub-band. The method further comprises changing the order in which the resonant elements are disposed along the signal transmission path to create a plurality of filter solutions, computing a performance parameter for each of the filter solutions, comparing the performance parameters to each other, selecting one of the filter solutions based on the comparison of the computed performance parameters, and constructing the RF filter using the selected filter solution.

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Номер записи: 15
16-01-2020 дата публикации

OSCILLATOR, ELECTRONIC DEVICE, AND VEHICLE

Номер: US20200018794A1
Автор: UEHARA Jun
Принадлежит:

An oscillator includes a resonator, a circuit device that is electrically coupled to the resonator and generates a clock signal, and an output terminal that is electrically coupled to the circuit device and outputs the clock signal. The circuit device includes an abnormality detection circuit, and when an abnormal state is detected by the abnormality detection circuit, the circuit device changes a signal characteristic of the clock signal. 1. An oscillator comprising:a resonator;a circuit device that is electrically coupled to the resonator and generates a clock signal; andan output terminal that is electrically coupled to the circuit device and outputs the clock signal, whereinthe circuit device includes an abnormality detection circuit, and the circuit device changes a signal characteristic of the clock signal when an abnormal state is detected by the abnormality detection circuit.2. The oscillator according to claim 1 , whereinwhen the abnormal state is detected, the circuit device changes a duty of the clock signal.3. The oscillator according to claim 2 , wherein an oscillation circuit that causes the resonator to oscillate to generate an oscillation signal,', 'an output circuit that outputs the clock signal based on the oscillation signal, and', 'a reference voltage generation circuit that generates a reference voltage, the output circuit includes a comparator that compares a voltage level of the oscillation signal and the reference voltage to each other, and the duty of the clock signal is changed by changing a voltage level of the reference voltage based on an abnormality detection signal from the abnormality detection circuit., 'the circuit device includes'}4. The oscillator according to claim 1 , whereinwhen the abnormal state is detected, the circuit device changes an amplitude of the clock signal.5. The oscillator according to claim 4 , wherein an oscillation circuit that causes the resonator to oscillate to generate an oscillation signal,', 'an output ...

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Номер записи: 16
18-01-2018 дата публикации

TEMPERATURE-ENGINEERED MEMS RESONATOR

Номер: US20180019724A1
Автор: Doll Joseph C., Grosjean Charles I., Hagelin Paul M., Hill Ginel C., Miller Nicholas
Принадлежит:

Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance. 120-. (canceled)21. A microelectromechanical system (MEMS) die comprising:a field area;a resonant structure having a layer of degenerately-doped polycrystalline silicon, a layer of degenerately-doped single-crystal silicon and a layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer; anda tethering structure to physically secure the resonant structure to the field area, the tethering structure having (i) a layer of degenerately-doped polycrystalline silicon coupled to the degenerately-doped polycrystalline silicon layer of the resonant structure and (ii) a layer of degenerately-doped single-crystal silicon coupled to the degenerately-doped single-crystal silicon layer of the resonant structure.22. The MEMS die of wherein the tethering structure is trenched to form a flexible member that permits mechanical motion of the resonant structure.23. The MEMS die of wherein the field area comprises an anchoring region physically secured to the tethering structure claim 21 , the anchoring region having (i) a layer of degenerately-doped polycrystalline silicon coupled to the degenerately-doped polycrystalline silicon layer of the tethering structure and (ii) a layer of degenerately-doped single-crystal silicon coupled to the degenerately-doped single-crystal silicon layer of the tethering structure.24. The MEMS die of further comprising a first electrical contact and a second electrical contact exposed at an outer surface of the MEMS die and electrically coupled claim 23 , respectively claim 23 , to the degenerately-doped polycrystalline silicon layer ...

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Номер записи: 17
17-01-2019 дата публикации

SYSTEMS AND METHODS FOR REDUCING THE ACTUATION VOLTAGE FOR ELECTROSTATIC MEMS DEVICES

Номер: US20190020326A1
Автор: Alsaleem Fadi, Hasan Mohammad H.
Принадлежит:

Systems and methods to amplify the response of a MEMS micro-oscillator by driving the MEMS device at its electrical and mechanical resonance frequencies, simultaneously. This enhances the MEMS mechanical sensitivity to electrical excitation and increases the voltage across the MEMS capacitor. Moreover, using a combination of two input signals at different frequencies (beat signal) may be used to achieve double resonance in any MEMS device, even if its natural frequency is far from its electrical resonance. 1. A method of actuating an electrostatic micro-electro-mechanical system (MEMS) micro-oscillator device , wherein the MEMS device has a natural mechanical resonance frequency and an internal electrical resonance frequency , the method comprising:driving the MEMS device with a first alternating current (AC) signal; andsimultaneously driving the MEMS device with a second AC signal,wherein a frequency of the first AC signal is within the 3-db bandwidth of, or substantially the same as, the internal electrical resonance frequency and wherein a difference between the frequency of the first AC signal and a frequency of the second AC signal is near to or substantially the same as the natural mechanical resonance frequency.2. The method of claim 1 , wherein the MEMS oscillator device includes an electrode arrangement comprising a first electrode and a second electrode arranged parallel to the first electrode claim 1 , wherein the second electrode is fixed and wherein at least a first end of the first electrode is able to move relative to the second electrode.3. The method of claim 2 , wherein the natural mechanical resonance frequency ω=√(k/m) claim 2 , and wherein the internal electrical resonance frequency ω=1/√{square root over (LC))} claim 2 , wherein Ls is the parasitic inductance of the electrode arrangement claim 2 , wherein Cis a nominal capacitance of the electrode arrangement claim 2 , wherein m is an effective mass of the first electrode and wherein k is a ...

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Номер записи: 18
16-01-2020 дата публикации

Laterally Vibrating Bulk Acoustic Wave Resonator

Номер: US20200021272A1
Автор: SEGOVIA FERNANDEZ Jeronimo, Smeys Peter, Yen Ting-Ta
Принадлежит:

A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers. 1. A microelectromechanical system (MEMS) device comprising:a laterally vibrating bulk acoustic wave (LVBAW) resonator, the LVBAW resonator comprising:a substrate;an acoustic mirror overlying a portion of the substrate;a first metal layer overlying a portion of the acoustic mirror, the first metal layer having a first thickness;a piezoelectric plate overlying the first metal layer, the piezoelectric layer having a second thickness; anda second metal layer overlying a portion of the piezoelectric plate, the second metal layer having a third thickness, the second metal layer patterned into an interdigital transducer (IDT), the IDT having first and second comb-shaped electrodes, the first comb-shaped electrode having first fingers, the second comb-shaped electrode having second fingers, the first fingers interlocking with the second fingers, and a sum of the first, second and third thicknesses being less than a respective pitch of both first and second fingers.2. The MEMS device of claim 1 , wherein the acoustic mirror is a multiple layer Bragg mirror claim 1 , adjacent ones of the multiple layers have different acoustic impedance claim 1 , and a thickness of each of the multiple layers is selected for the Bragg mirror to have a minimal transmission coefficient at different frequencies.3. The MEMS device of claim 1 , wherein the IDT has opposite first and second sides claim 1 , and the second metal layer is patterned into a first side reflector having first metal strip lines ...

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Номер записи: 19
28-01-2021 дата публикации

ACOUSTICALLY DECOUPLED MEMS DEVICES

Номер: US20210028759A1
Автор: Ayazi Farrokh, HAMELIN Benoit, Yang Jeremy
Принадлежит:

Embodiments of the present disclosure relate generally to acoustically decoupled microelectromechanical system devices and, more particularly, to acoustically decoupled microelectromechanical system devices anchored upon phononic crystals. In some embodiments described herein, a device may comprise a resonator, a handle layer, and a pedestal disposed between the resonator and the handle layer, the pedestal connecting the resonator to the handle layer. In the devices described herein, the resonator and the handle layer may be non-coplanar. In some embodiments, the handle layer comprises a phononic crystal to acoustically decouple the resonator from the substrate of the handle layer. 1. A device comprising:a resonator comprising a perimeter edge and a first diameter,a handle layer comprising a phononic crystal structure; anda pedestal having a second diameter and connecting the resonator to the handle layer;wherein the second diameter is from between 1% and 10% of the first diameter. he first diameter2. The device of claim 1 , wherein the resonator and the handle layer are not coplanar.3. The device of claim 1 , wherein the handle layer has a first side proximate the pedestal and a second side;wherein a handle layer thickness is defined between the first side and the second side; andwherein the handle layer thickness is approximately λ/4, w here λ is equal to a wavelength of an acoustic wave propagating through the handle layer corresponding to a resonator frequency.4. The device of claim 1 , wherein the handle layer comprises a plurality of structures etched into the handle layer.5. The device of claim 1 , wherein the handle layer comprises a lattice structure having a plurality of unit-cells.6. (canceled)7. The device of claim 5 , wherein the lattice structure is a honeycomb lattice structure having a unit-cell length of from between 10 μm and 1500 μm.8. The device of claim 1 , wherein the resonator is a gyroscope.9. The device of claim 1 , wherein the perimeter ...

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Номер записи: 20
01-02-2018 дата публикации

ACOUSTIC RESONATOR DEVICES AND METHODS WITH NOBLE METAL LAYER FOR FUNCTIONALIZATION

Номер: US20180034438A1
Автор: Rivas Rio, Ryder Matthew
Принадлежит:

A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with an interface layer including a material having a surface (e.g., gold or a hydroxylated oxide) that may be functionalized with a functionalization (e.g., specific binding) material. The interface layer and/or an overlying blocking layer are precisely patterned to control locations of the interface layer available to receive a self-assembled monolayer (SAM), thereby addressing issues of misalignment and oversizing of a functionalization zone that would arise by relying solely on microarray spotting. Atomic layer deposition may be used for deposition of the interface layer and/or an optional hermeticity layer. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided. 1. A micro-electrical-mechanical system (MEMS) resonator device comprising:a substrate;a bulk acoustic wave resonator structure arranged over at least a portion of the substrate, the bulk acoustic wave resonator structure including a piezoelectric material, a top side electrode arranged over a portion of the piezoelectric material, and a bottom side electrode arranged between the piezoelectric material and the substrate, wherein a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region;{'sup': '2', 'a hermeticity layer arranged over at least a portion of the top side electrode, the hermeticity layer comprising a dielectric material including a water vapor transmission rate of no greater than 0.1 (g/m/day);'}an interface layer arranged over at least a portion of the hermeticity layer, the interface layer comprising interface layer material including gold or another noble metal, wherein less than an entirety of the piezoelectric material is overlaid with interface layer material that is available to receive a self-assembled monolayer (SAM); anda self-assembled monolayer arranged over at least a ...

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Номер записи: 21
04-02-2021 дата публикации

STRUCTURES, ACOUSTIC WAVE RESONATORS, DEVICES AND SYSTEMS TO SENSE A TARGET VARIABLE, INCLUDING AS A NON-LIMITING EXAMPLE CORONA VIRUSES

Номер: US20210036678A1
Автор: BURAK Dariusz, GRANNEN Kevin J., LENELL JACK
Принадлежит:

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including fluidic systems, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material. The bulk acoustic wave (BAW) resonator may comprise a top electrode. A sensing region may be acoustically coupled with the top electrode of the bulk acoustic wave (BAW) resonator. 1. A fluidic system comprising:a substratea Bulk Acoustic Wave (BAW) resonator arranged over the substrate, the BAW resonator including: a first layer of piezoelectric material; and a top electrode; anda sensing region acoustically coupled with the top electrode of the BAW resonator, in which a sensitivity of the fluidic system when the sensing region is exposed to fluid is within a range from approximately one half part per million per one hundred attograms to approximately fifty parts per million per one hundred attograms.2. (canceled)3. The fluidic system as in in which the fluidic system is to detect at least one virus in a fluid comprising water.4. The fluidic system as in in which the fluidic system is to detect at least one SARS-CoV-2 virus in a fluid comprising water.5. The fluidic system as in in which the sensing region comprises a functionalized layer to facilitate binding to an analyte.6. (canceled)7. (canceled)8. The fluidic system as in comprising a plurality of Bulk Acoustic Wave (BAW) resonators having respective sensing regions in which the plurality of Bulk Acoustic Wave resonators have respective resonant frequencies that are different from one another to facilitate identification of respective members of the plurality of Bulk Acoustic Wave resonators.9. (canceled)10. (canceled)11. The fluidic system as in comprising a second layer of piezoelectric material claim 1 , in which:the first layer of piezoelectric material has a first piezoelectric axis orientation; andthe second layer of piezoelectric ...

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Номер записи: 22
24-02-2022 дата публикации

COUPLED MEMS RESONATOR

Номер: US20220060171A1
Автор: Jaakkola Antti
Принадлежит: KYOCERA Tikitin Oy

A microelectromechanical resonator includes a support structure, a resonator element suspended to the support structure, and an actuator for exciting the resonator element to a resonance mode. The resonator element includes a plurality of adjacent sub-elements each having a length and a width and a length-to-width aspect ratio of higher than 1 and being adapted to a resonate in a length-extensional, torsional or flexural resonance mode. Further, each of the sub-elements is coupled to at least one other sub-element by one or more connection elements coupled to non-nodal points of the of said resonance modes of the sub-elements for exciting the resonator element into a collective resonance mode. 2. The resonator according to claim 1 , wherein at least two of the sub-elements are coupled to each other in the width direction thereof claim 1 , whereby said connection elements comprise at least two essentially rigid connection elements abutting an elongated trench that remains between the sub-elements and extends in the length direction thereof. The aspects of the disclosed embodiments relate to microelectromechanical (MEMS) resonators. In particular, the aspects of the disclosed embodiments relate to length-extensional, torsional or flexural mode resonators.Electromechanical resistance, also known as equivalent series resistance (ESR) is an important performance parameter of a resonator. Compared with traditional quartz crystals, ESR tends to be high in particular in piezoelectrically actuated beam resonators, such as length-extensional (LE) resonators, since the fundamental LE mode can exist in a beam resonator only when the length-to-width aspect ratio is higher than 1, i.e. in a beam that is longer than the width of the beam, and Nth overtone LE mode can exist in a beam resonator whose length-to-width aspect ratio is higher than N. Since the ESR of an LE modes decreases when the width of the beam increases, wider beams would be preferred to get lower ESR. However, the ...

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Номер записи: 23
24-02-2022 дата публикации

Transversely-excited film bulk acoustic resonators using multiple dielectric layer thicknesses to suppress spurious modes

Номер: US20220060175A1
Автор: Bryant Garcia
Принадлежит: Resonant Inc

Acoustic filters and methods of fabricating acoustic filters are disclosed. A filter includes a single-crystal piezoelectric plate having a front surface and a back surface attached to a substrate, and a plurality of acoustic resonators including a first shunt resonator, a second shunt resonator, and one or more series resonators. Each of the plurality of acoustic resonators includes an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on a respective diaphragm formed by a portion of the piezoelectric plate that spans a cavity in the substrate. A frequency setting dielectric layer is formed over the first and second shunt resonators but not over the one or more series resonators. The frequency setting dielectric layer has a thickness t1 on the first shunt resonator and a thickness t2 on the second shunt resonator, where t1 is not equal to t2.

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Номер записи: 24
15-02-2018 дата публикации

ACOUSTIC RESONATOR DEVICE WITH CONTROLLED PLACEMENT OF FUNCTIONALIZATION MATERIAL

Номер: US20180048280A1
Автор: Edwards Thayne, Rivas Rio, Ryder Matthew
Принадлежит:

A micro-electrical-mechanical system (MEMS) resonator device includes at least one functionalization material arranged over at least a central portion, but less than an entirety, of a top side electrode. For an active region exhibiting greatest sensitivity at a center point and reduced sensitivity along its periphery, omitting functionalization material over at least one peripheral portion of a resonator active region prevents analyte binding in regions of lowest sensitivity. The at least one functionalization material extends a maximum length in a range of from about 20% to about 95% of an active area length and extends a maximum width in a range of from about 50% to 100% of an active area width. Methods for fabricating MEMS resonator devices are also provided. 1. A micro-electrical-mechanical system (MEMS) resonator device comprising:a substrate;a bulk acoustic wave resonator structure arranged over at least a portion of the substrate, the bulk acoustic wave resonator structure including a piezoelectric material, a top side electrode arranged over a portion of the piezoelectric material, and a bottom side electrode arranged between the piezoelectric material and the substrate, wherein a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region, the top side electrode comprises an active area portion that overlaps the bottom side electrode and is coincident with the active region, the active area portion includes an active area width, and the active area portion includes an active area length extending perpendicular to the active area width; andat least one functionalization material arranged over at least a central portion of the top side electrode, wherein the at least one functionalization material extends a maximum length in a range of from about 20% to about 95% of the active area length and extends a maximum width in a range of from about 50% to 100% of the active area width.2. The ...

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Номер записи: 25
15-02-2018 дата публикации

RESONATOR

Номер: US20180048284A1
Автор: Kaajakari Ville, NAKAMURA Daisuke, Nishimura Toshio
Принадлежит:

A resonator including a vibrating portion with first and second electrodes and a piezoelectric film formed therebetween. Moreover, a frame surrounds the vibrating portion with a pair of holding units opposite to each other and connecting the vibrating portion with the frame. An extended electrode extends from the holder to the holding unit and either the first or second electrode extends to the holding unit, and is connected to the extended electrode. Furthermore, the resonator includes an electrical resistance value per unit area of the extended electrode that is smaller than an electrical resistance value per unit area of the first electrode or the second electrode that extends to the holding unit. 1. A resonator , comprising:a vibrating portion including at least one first electrode, a second electrode, and a piezoelectric film;a frame that surrounds the vibrating portion;a pair of holding units respectively connecting opposing sides of the vibrating portion to the frame; andat least one extended electrode extending from the frame to one holding unit of the pair of holding units,wherein the at least one first electrode extends from the vibration portion to the one holding unit and is coupled to the extended electrode on the one holding unit, andwherein the at least one extended electrode has an electrical resistance value per unit area that is smaller than an electrical resistance value per unit area of the at least one first electrode extended from the vibration portion to the one holding unit.2. The resonator according to claim 1 , wherein the one holding unit further includes a protection film of an insulator disposed on the at least one first electrode.3. The resonator according to claim 2 , wherein the at least one extended electrode is connected to the at least one first electrode through a via extending through the protection film.4. The resonator according to claim 1 ,wherein the second electrode extends from the vibration portion to a second holding unit ...

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Номер записи: 26
15-02-2018 дата публикации

RESONATOR AND RESONANCE DEVICE

Номер: US20180048286A1
Автор: GOTO Yuichi, Hirota Wakana
Принадлежит:

A resonance device is provided having a resonator with opposing upper and lower lids. The resonator includes a base, and multiple vibration arms that are connected to a front end of the base so as to extend away from the base. Moreover, a frame surrounds a periphery of the base portion and the vibration arms and one or more holding arms connect the base to the frame. The base, the vibration arms, and the holding arm include a substrate and a temperature characteristics correction layer laminated on the substrate and having a material with a coefficient of thermal expansion different from that of the substrate. The base, the vibration arms, and the holding arm are formed integrally with the substrate and the temperature characteristics correction layer. 1. A resonance device , comprising:an upper lid;a lower lid that opposes the upper lid; and a base,', 'a plurality of vibration arms having respective first and second ends with the respective first ends coupled to a front end of the base, such that the plurality of vibration arms extend in a direction away from the base,', 'a frame surrounding at least a portion of the base and the plurality of vibration arms, and', 'at least one holding arm having a first end coupled to the base and a second end coupled to the frame, the second end of the at least one holding arm being closer to the second end of at least one of the plurality of vibration arms than the first end of the at least one of the plurality of vibration arms,, 'a resonator interposed between the upper and lower lids, the resonator includingwherein the base, the plurality of vibration arms, and the at least one holding arm include a substrate and a temperature characteristics correction layer disposed on the substrate that comprises a material having a coefficient of thermal expansion different from that of the substrate.2. The resonance device according to claim 1 , wherein the base claim 1 , the plurality of vibration arms claim 1 , and the at least one ...

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Номер записи: 27
14-02-2019 дата публикации

High quality factor mems silicon flower-of-life vibratory gyroscope

Номер: US20190049247A1
Автор: David T. Chang, Hung Nguyen, Lian X HUANG, Logan D. Sorenson, Raviv Perahia
Принадлежит: HRL LABORATORIES LLC

A resonator includes an anchor, an outer stiffener ring on an outer perimeter of the resonator, and a plurality of curved springs between the anchor and the outer stiffener ring.

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Номер записи: 28
22-02-2018 дата публикации

Resonator

Номер: US20180054180A1
Автор: Daisuke Nakamura, Toshio Nishimura, Ville Kaajakari
Принадлежит: Murata Manufacturing Co Ltd

A resonator that includes a rectangular vibrating portion having first and second pairs of sides that provides contour vibration. A frame surrounds a periphery of the vibrating portion and a first holding unit between the frame and one of the first sides and includes a first arm substantially in parallel to the vibrating portion, multiple second arms connecting the first arm with the vibrating portion, and a third arm connecting the first arm with the frame. A first connection line is on the first arm; a first terminal is on the frame; three or more electrodes are on the vibrating portion; and multiple first extended lines are on the second arms and connect first and second electrodes with the first connection line. The first extended lines are connected to the first connection line, which is electrically connected to the first terminal.

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Номер записи: 29
03-03-2016 дата публикации

Vibrating device

Номер: US20160064642A1
Автор: Hiroshi Yamada, Keiichi Umeda, Keisuke Takeyama, Takashi Hase, Takehiko KISHI, Toshio Nishimura
Принадлежит: Murata Manufacturing Co Ltd

A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T 1 , a total thickness of the silicon oxide layer is denoted by T 2 , and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T 2 /(T 1 +T 2 ) is within a range of (−0.0003x 2 −0.0256x+0.0008)±0.05.

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Номер записи: 30
03-03-2016 дата публикации

NANO- AND MICRO-ELECTROMECHANICAL RESONATORS

Номер: US20160065169A1
Автор: Hui Yu, Qian Zhenyun, Rinaldi Matteo
Принадлежит:

A resonator including a piezoelectric plate and an interdigital electrode is provided. A ratio between a thickness of the plate and a pitch of the interdigital electrode may be from about 0.5 to about 1.5. A radiation detector including a resonator and an absorber layer capable of absorbing at least one of infrared and terahertz radiation is provided. A resonator including a piezoelectric plate and a two-dimensional electrically conductive material is provided. 1. A resonator comprising:a piezoelectric plate, anda first interdigital electrode including a plurality of conductive strips disposed on a first surface of the piezoelectric plate, wherein the plurality conductive strips are arranged with a pitch;wherein a ratio between a thickness of the piezoelectric plate and the pitch of the first interdigital electrode is from about 0.5 to about 1.5.2. The resonator of claim 1 , wherein the thickness of the piezoelectric plate is from about 25 nm to about 500 nm.3. (canceled)4. The resonator of claim 1 , wherein the piezoelectric plate comprises at least one of aluminum nitride claim 1 , lithium niobate claim 1 , lithium tantalite claim 1 , zinc oxide claim 1 , gallium nitride and quartz.57-. (canceled)8. The resonator of claim 1 , wherein the resonator further comprises a second interdigital electrode disposed on a second surface of the piezoelectric plate opposing the first surface.9. The resonator of claim 1 ,wherein a combined mode of vibration comprising a thickness-extensional mode and a lateral-extensional mode is excited in the piezoelectric plate in response to an alternating current (AC) applied through the first interdigital electrode.10. The resonator of claim 9 , wherein both dand dpiezoelectric coefficients contribute to the combined mode of vibration.1113-. (canceled)14. The resonator of claim 9 , wherein a frequency of the combined mode of vibration is at least about 10 MHz to about 100 GHz.1520-. (canceled)21. A radiation detector comprising: a ...

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Номер записи: 31
27-02-2020 дата публикации

Vibrating beam accelerometer

Номер: US20200064367A1
Автор: John Strehlow, Mitchell Novack
Принадлежит: Honeywell International Inc

A resonator defining a longitudinal axis that includes a mounting pad, a pad connector, at least one isolation mechanism, and a pair of elongated tines extending in the direction of the longitudinal axis. The isolation mechanism including an outer block defining a first outer end and a second outer end on opposite sides, an inner block defining a first inner end and a second inner end on opposite sides, and a pair of interconnect members, where each respective interconnect member of the pair of interconnect members connects the second outer end to the first inner end. The respective first ends of the pair of elongated tines being connected to the second inner end and the pad connector connects the mounting pad to the first outer end.

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Номер записи: 32
08-03-2018 дата публикации

MEMS RESONATOR WITH A HIGH QUALITY FACTOR

Номер: US20180069527A1
Автор: Kaajakari Ville
Принадлежит:

A symmetrical MEMS resonator is disclosed with a high quality factor. The MEMS resonator includes a silicon layer with a top surface and bottom surface opposite the top surface. A pair of first metal layers is provided above the top surface of the silicon layer and a corresponding pair of second metal layers is symmetrically provided below the second surface of the silicon layer relative to the pair of first metal layers. Furthermore, a first piezoelectric layer is disposed between the pair of first metal layers and a second piezoelectric layer is disposed between the pair of second metal layers. 1. A MEMS resonator etched to vibrate in a lateral direction , the MEMS resonator comprising:a silicon layer having a first surface and a second surface opposite the first surface;at least one metal layer disposed above the first surface of the silicon layer and at least one corresponding metal layer disposed below the second surface of the silicon layer; anda piezoelectric layer disposed above the first surface of the silicon layer and a corresponding piezoelectric layer disposed below the second surface of the silicon layer,wherein the respective metal layers and the respective piezoelectric layers are symmetrically disposed about the silicon layer such that the MEMS resonator is structurally configured to vibrate in the lateral direction that extends parallel to the first and second surfaces of the silicon layer.2. The MEMS resonator according to claim 1 , wherein vertical sides surfaces of the silicon layer are etched to be unobstructed claim 1 , such that the MEMS resonator is structurally configured to vibrate primarily in the lateral direction.3. The MEMS resonator according to claim 1 ,wherein the at least one metal layer comprises a pair of first metal layers with the piezoelectric layer disposed therebetween, andwherein the at least one corresponding metal layer comprises a pair of second metal layers with the corresponding piezoelectric layer disposed ...

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Номер записи: 33
08-03-2018 дата публикации

Tunable Film Bulk Acoustic Resonators and Filters with Integrated Biasing Resistors

Номер: US20180069528A1
Автор: Andy Shih, Chunong Qiu, Cindy X. Qiu, Ishiang Shih, Julia Qiu, Yi-Chi Shih
Принадлежит: Andy Shih, Chunong Qiu, Cindy X. Qiu, Ishiang Shih, Julia Qiu, Yi-Chi Shih

In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.

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Номер записи: 34
27-02-2020 дата публикации

Resonator and device including the same

Номер: US20200067479A1
Автор: Tamio Ikehashi
Принадлежит: Toshiba Corp

According to one embodiment, a resonator is disclosed. The resonator includes a vibrator and an attenuation mechanism. The attenuation mechanism selectively attenuates vibration of a spurious mode that is mechanically coupled to a first mode when the vibrator vibrates in the first mode.

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Номер записи: 35
27-02-2020 дата публикации

VIBRATOR DEVICE, MANUFACTURING METHOD OF VIBRATOR DEVICE, ELECTRONIC DEVICE, AND VEHICLE

Номер: US20200067484A1
Автор: EBINA Akihiko, KAWAUCHI Osamu, YAMAZAKI Takashi
Принадлежит:

A vibrator device includes: a base; a vibrator disposed in the base; and a lid including a substrate having a light transmitting property and a silicon substrate joined to the substrate and a part of the base surrounding the vibrator. 1. A vibrator device comprising:a base;a vibrator disposed in the base; and a substrate having a light transmitting property and', 'a silicon substrate joined to the substrate and a part of the base surrounding the vibrator., 'a lid including'}2. The vibrator device according to claim 1 , whereinthe substrate is glass.3. The vibrator device according to claim 2 , whereinthe glass contains an alkali ion.4. The vibrator device according to claim 1 , wherein a vibrating section integral with the base,', 'a piezoelectric body disposed above the vibrating section, and', 'an electrode disposed above the piezoelectric body., 'the vibrator includes'}5. A manufacturing method of a vibrator device comprising:joining a silicon substrate to a substrate having a light transmitting property;etching an inside of the silicon substrate; andjoining the silicon substrate to a part of the base surrounding a vibrator.6. The manufacturing method of a vibrator device according to claim 5 , whereinthe vibrator includes an electrode, and 'removing a part of the electrode by irradiating the electrode with a laser beam transmitted through the lid, after the joining.', 'the method further comprises'}7. An electronic device comprising: a base,', 'a vibrator disposed in the base, and', a substrate having a light transmitting property and', 'a silicon substrate joined to the substrate and a part of the base surrounding the vibrator; and, 'a lid including'}], 'a vibrator device including'}a controller that performs a control based on an output signal of the vibrator device.8. A vehicle comprising: a base,', 'a vibrator disposed in the base, and', a substrate having a light transmitting property and', 'a silicon substrate joined to the substrate and a part of the base ...

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Номер записи: 36
07-03-2019 дата публикации

Resonator and resonance device

Номер: US20190074811A1
Автор: Toshio Nishimura
Принадлежит: Murata Manufacturing Co Ltd

A vibrator that includes a silicon substrate, an electrode facing a surface of the silicon substrate, and a piezoelectric body between the silicon substrate and the electrode and that produces contour vibration in a plane along the surface of the silicon substrate in accordance with a voltage applied to the electrode. The vibrator includes one or more substantially rectangular vibration regions each having a long side parallel to a node of the contour vibration of the piezoelectric body and a short side orthogonal to the node of the contour vibration of the piezoelectric body and corresponding to a half-wavelength of the contour vibration. The resonator satisfies W/T≥4 and y=−0.85×(1/T)+0.57±0.05 where T is the thickness of the silicon substrate, W is the width of the short side of the vibration region, and y is the resistivity of the silicon substrate.

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Номер записи: 37
07-03-2019 дата публикации

RESONATOR AND RESONANCE DEVICE

Номер: US20190074812A1
Автор: GOTO Yuichi, INOUE YOSHIHISA, Kawai Ryota, Nishimura Toshio, Takeyama Keisuke
Принадлежит:

A resonator that includes a base and one or more vibration arms with fixed ends connected to a front end of the base and open ends extending therefrom. Moreover, the vibration arms include first and second electrodes and a piezoelectric film that is disposed therebetween. The resonator further includes a protective film disposed opposing an upper face of the piezoelectric film and sandwiching the first electrode and a temperature characteristics adjusting film formed of a material different from a material of the protective film and that is provided on the fixed end side relative to the center of the vibration arms such that part of the protective film is exposed to a surface. 1. A resonator comprising:a base;at least one vibration arm having a fixed end connected to a front end of the base and an open end extending from the front end, the vibration arm including first and second electrodes with a piezoelectric film disposed therebetween and having an upper face opposite the first electrode;a protective film disposed opposing the upper face of the piezoelectric film and sandwiching the first electrode therebetween; anda temperature characteristics adjusting film comprising a material different than a material of the protective film and disposed on a fixed end side of the at least one vibration arm relative to a center of the at least one vibration arm, such that a least a portion of the protective film on the at least one vibration arm is exposed to a surface.2. The resonator according to claim 1 , wherein the at least one vibration arm is configured to vibrate in a predetermined vibration mode when a voltage is applied between the first and second electrodes.3. The resonator according to claim 1 , wherein the protective film extends from the fixed end of at least one vibration arm towards the open end.4. The resonator according to claim 1 , further comprising a frequency adjusting film opposing the upper face of the piezoelectric film with the protective film ...

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Номер записи: 38
15-03-2018 дата публикации

Cantilevered Shear Resonance Microphone

Номер: US20180077497A1
Автор: HATIPOGLU Gokhan
Принадлежит:

A MEMS microphone includes a base structure and a piezoelectric resonator body having a first end and a second end. The first end is fixedly supported by the base structure and the second end is free such that the piezoelectric resonator is cantilevered from the base structure. The MEMS microphone further includes a first electrode operably connected to the piezoelectric resonator body and a second electrode operably connected to the piezoelectric resonator body. A controller includes at least one circuit operably connected to the first and second electrodes and configured to drive the piezoelectric resonator body at a shear resonance frequency of the piezoelectric resonator body and to detect a difference in the shear resonance frequency from a baseline resonance frequency resulting from a sound pressure. 1. A MEMS microphone comprisinga base structure;a piezoelectric resonator body having a first end and a second end, the first end being fixedly supported by the base structure and the second end being free such that the piezoelectric resonator is cantilevered from the base structure;a first electrode operably connected to the piezoelectric resonator body;a second electrode operably connected to the piezoelectric resonator body;a controller including at least one circuit operably connected to the first and second electrodes, the controller configured to drive the piezoelectric resonator body at a shear resonance frequency of the piezoelectric resonator body and to detect a frequency shift in the shear resonance frequency from a baseline resonance frequency, the detected frequency shift resulting from a sound pressure acting on the piezoelectric resonator body.2. The MEMS microphone of claim 1 , wherein:the piezoelectric resonator body is formed in a plane; andthe controller is configured to drive the piezoelectric resonator body to resonate in the plane of the piezoelectric resonator body.3. The MEMS microphone of claim 2 , wherein the piezoelectric resonator body ...

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Номер записи: 39
05-03-2020 дата публикации

Direct-current tuning of bulk acoustic wave resonator devices

Номер: US20200076366A1
Автор: Ali Kiaei, Baher Haroun, Bichoy BAHR, Ting-Ta Yen
Принадлежит: Texas Instruments Inc

A system includes a tunable bulk acoustic wave (BAW) resonator device and a direct-current (DC) tuning controller coupled to the tunable BAW resonator device. The system also includes an oscillator circuit coupled to the tunable BAW resonator device. The DC tuning controller selectively adjusts a DC tuning signal applied to the tunable BAW resonator device to adjust a signal frequency generated by the oscillator circuit.

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Номер записи: 40
22-03-2018 дата публикации

TWO-DIMENSIONAL MODE RESONATORS

Номер: US20180083181A1
Автор: Cassella Christian, Piazza Gianluca
Принадлежит:

A piezoelectric two-dimensional mode resonator suited for high frequency filtering applications, with the ability to simultaneously excite lateral and vertical acoustic waves. 1. A MEM device forming a two-dimensional mode resonator comprising:a piezoelectric layer having a top surface and a bottom surface;a first metallic grating disposed on said top surface, said first metallic grating comprising a plurality of fingers extending across said top surface; anda second metallic grating disposed on said bottom surface, said second metallic grating comprising a plurality of fingers extending across said bottom surface.2. The device of wherein said first metallic grating and said second metallic grating are identical.3. The device of wherein applying a voltage differential between said first metallic grating and said second metallic grating causes both longitudinal and lateral vibrations in said piezoelectric layer.4. The device of wherein said longitudinal vibrations and said lateral vibrations combine into a single mode of vibration.5. The device of wherein the frequency at which said single mode of vibration is formed is dependent upon the spacing between said fingers on said first and second metallic gratings.6. The device of wherein said device has a resonant frequency which varies inversely with the width of said fingers in said first and second metallic gratings.7. The device of wherein said device has a resonance frequency claim 5 , said resonance frequency having a first order dependency on the thickness of said piezoelectric layer and a second order dependency of the width of said piezoelectric layer.8. The device of wherein said piezoelectric layer is composed of a material selected from a group consisting of aluminum nitride claim 1 , gallium nitride claim 1 , gallium arsenide claim 1 , lithium niobate claim 1 , lead zirconate titanate and PMNT.9. The device of wherein said piezoelectric layer has a thickness between approximately 100 nm and 6 μm.10. The ...

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Номер записи: 41
22-03-2018 дата публикации

SIGNAL PROCESSING APPARATUS AND METHOD FOR TRANSMITTING AND RECEIVING COHERENT PARALLEL OPTICAL SIGNALS

Номер: US20180083599A1
Автор: KIPPENBERG Tobias, Koos Christian, MARIN-PALOMO Pablo, NASSIR Kemal Juned
Принадлежит:

A signal processing apparatus, being configured for transmitting and receiving coherent parallel optical signals, comprises a transmitter apparatus including a first single soliton micro-resonator device and a modulator device, wherein the first single soliton micro-resonator device is adapted for creating a single soliton providing a first frequency comb, wherein the first frequency comb provides a plurality of equidistant optical carriers with a frequency spacing corresponding to a free spectral range of the first single soliton micro-resonator device, and the modulator device is adapted for modulating the optical carriers according to data to be transmitted, and a receiver apparatus including a coherent receiver device with a plurality of coherent receivers and a local oscillator device providing a plurality of reference optical signals, wherein the coherent receiver device and the local oscillator device are arranged for coherently detecting the transmitted modulated optical carriers, wherein the signal processing apparatus further includes at least one second single soliton micro-resonator device having a free spectral range being equal or approximated to the free spectral range of the first single soliton micro-resonator device and being adapted for creating at least one single soliton providing at least one second frequency comb, wherein the at least one second frequency comb provides at least one of additional optical carriers and the reference optical signals. Furthermore, a signal processing method, including transmitting and receiving coherent parallel optical signals via a communication channel is described. 1. Signal processing apparatus , being configured for transmitting and receiving coherent parallel optical signals , comprising the first single soliton micro-resonator device is adapted for creating a single soliton providing a first frequency comb, wherein the first frequency comb provides a plurality of equidistant optical carriers with a ...

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Номер записи: 42
23-03-2017 дата публикации

Low-loss tunable radio frequency filter

Номер: US20170085249A1
Автор: Balam A. Willemsen, Genichi Tsuzuki
Принадлежит: Resonant Inc

A method of constructing an RF filter comprises designing an RF filter that includes a plurality of resonant elements disposed, a plurality of non-resonant elements coupling the resonant elements together to form a stop band having a plurality of transmission zeroes corresponding to respective frequencies of the resonant elements, and a sub-band between the transmission zeroes. The non-resonant elements comprise a variable non-resonant element for selectively introducing a reflection zero within the stop band to create a pass band in the sub-band. The method further comprises changing the order in which the resonant elements are disposed along the signal transmission path to create a plurality of filter solutions, computing a performance parameter for each of the filter solutions, comparing the performance parameters to each other, selecting one of the filter solutions based on the comparison of the computed performance parameters, and constructing the RF filter using the selected filter solution.

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Номер записи: 43
31-03-2016 дата публикации

Resonant circuit with variable frequency and impedance

Номер: US20160094199A1
Автор: Alexandre Reinhardt, Jean-Baptiste David
Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

A resonant circuit comprises an input terminal and an output terminal and at least: a group of N resonators, where N≧1, the resonators having the same resonance frequency and the same antiresonance frequency; a first and a second impedance matching element having a non-zero reactance, the first element being in series with the group of resonators, and the second element being in parallel with the group of resonators, the resonant circuit comprising: first means for controlling the group of resonators, enabling the static capacitance of the group to be fixed at a first value; second control means, enabling the impedance of the first impedance matching element and that of the second element to be fixed at second values; the first and second values being such that the triplet of values composed of the static capacitance of the group, the impedance of the first element, and the impedance of the second element can be used to determine the following triplet of parameters: the characteristic impedance Z c of the assembly formed by the group, the first impedance matching element and the second matching element; the resonance frequency ω r of the assembly; the antiresonance frequency ω a of the assembly, in order to stabilize the impedance of the circuit at a chosen characteristic impedance.

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Номер записи: 44
05-05-2022 дата публикации

MICROMECHANICAL RESONATOR AND RESONATOR SYSTEM INCLUDING THE SAME

Номер: US20220140802A1
Автор: Kang Sungchan, KIM Cheheung, RHEE Choongho, YOON Yongseop
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided is a micromechanical resonator including a support beam including a first portion supported on a support member and a second portion spaced apart from the first portion in a length direction of the support beam, and a piezoelectric sensing portion provided between the first portion and the second portion and connecting the first portion to the second portion.

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Номер записи: 45
05-05-2022 дата публикации

Bulk acoustic wave (baw) resonator with patterned layer structures, devices and systems

Номер: US20220140803A1
Автор: Dariusz Burak, Jack LENELL, Kevin J. Grannen
Принадлежит: Qxonix Inc

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.

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Номер записи: 46
05-05-2022 дата публикации

MASS LOADED BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURES, DEVICES, AND SYSTEMS

Номер: US20220140804A1
Автор: BURAK Dariusz, GRANNEN Kevin J., LENELL JACK
Принадлежит:

Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a mass load layer to facilitate a preselected frequency compensation in the resonant frequency.

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Номер записи: 47
05-05-2022 дата публикации

TEMPERATURE COMPENSATING BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURES, DEVICES AND SYSTEMS

Номер: US20220140805A1
Автор: BURAK Dariusz, GRANNEN Kevin J., LENELL JACK
Принадлежит:

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable resonance mode may be provided. The first layer of piezoelectric material may have a thickness so that the bulk acoustic wave resonator has a resonant frequency. The first layer of piezoelectric material may include a first pair of sublayers of piezoelectric material, and a first layer of temperature compensating material. A substrate may be provided.

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Номер записи: 48
05-05-2022 дата публикации

STRUCTURES, ACOUSTIC WAVE RESONATORS, DEVICES AND SYSTEMS

Номер: US20220140806A1
Автор: BURAK Dariusz, GRANNEN Kevin J., LENELL JACK
Принадлежит: QXONIX, INC.

Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material having a first piezoelectric axis orientation. The bulk acoustic wave (BAW) resonator may comprise a multi-layer acoustic reflector, e.g., a multi-layer metal top acoustic reflector electrode, including a first pair of top metal electrode layers. The first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite a piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator.

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Номер записи: 49
05-05-2022 дата публикации

Quartz MEMS Piezoelectric Resonator for Chipscale RF Antennae

Номер: US20220140813A1
Автор: KUBENA Randall L., Wall Walter S.
Принадлежит: HRL LABORATORIES, LLC

A RF antenna comprises a quartz resonator having electrodes disposed thereon with a magnetostrictive film disposed on the quartz resonator either on, partially under or adjacent at least one of the electrodes. A RF antenna having a magnetostrictive film may be made by patterning selected portions of a top surface of the quartz wafer for deposition of electrode metal and deposition of the magnetostrictive film and depositing the electrode metal and the magnetostrictive film; temporarily bonding the quartz wafer to a handle wafer; thinning the quartz wafer to a desired thickness; etching the quartz wafer to define the outlines of at least one quartz resonator bearing the electrode metal and the magnetostrictive film; patterning selected portions of a bottom surface the at least one quartz resonator for deposition of electrode metal and at least one bond pad and depositing the electrode metal and the at least one bond pad; bonding the at least one quartz resonator to a substrate wafer; and releasing the at least one quartz resonator from the handle wafer.

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Номер записи: 50
21-03-2019 дата публикации

RESONANCE DEVICE MANUFACTURING METHOD

Номер: US20190089321A1
Автор: Morinaga Shungo
Принадлежит:

A method for adjusting a resonant frequency of a resonator without impairing piezoelectricity that includes preparing a lower lid; arranging a substrate with a lower surface that faces the lower lid and forming a first electrode layer, a piezoelectric film, and a second electrode layer on an upper surface of the substrate. Moreover, a vibration arm is formed that bends and vibrates from the first electrode layer, the second electrode layer, and the piezoelectric film and an upper lid faces the lower lid with the resonator interposed therebetween. The method further includes adjusting a frequency of the resonator before or after arranging the upper lid by exciting the vibration arm by applying a voltage between the first electrode layer and the second electrode layer and by causing a part of the vibration arm to collide with either or both of the lower lid and the upper lid. 1. A resonance device manufacturing method comprising:arranging a lower surface of a substrate to face a lower lid;forming a first electrode layer, a piezoelectric film and a second electrode layer on an upper surface of the substrate, the upper surface opposing the lower surface;forming a resonator that includes at least one vibration arm configured to bend and vibrate from the first electrode layer, the second electrode layer, and the piezoelectric film;arranging an upper lid that faces the lower lid with the resonator interposed therebetween; andadjusting a frequency of the resonator by exciting the at least one vibration arm by applying a voltage between the first and second electrode layers, such that at least a part of the at least one vibration arm collides with at least one of the lower lid and the upper lid.2. The resonance device manufacturing method according to claim 1 , wherein the adjusting of the frequency of the resonator is performed before the arranging of the upper lid.3. The resonance device manufacturing method according to claim 1 , wherein the adjusting of the frequency of ...

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Номер записи: 51
30-03-2017 дата публикации

MICROELECTROMECHANICAL RESONATOR

Номер: US20170093361A1
Автор: Chokshi Trushal, Doll Joseph C., Grosjean Charles I., Hagelin Paul M., Hill Ginel C., Lutz Markus, Miller Nicholas, Partridge Aaron, Zhang Yi
Принадлежит:

In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius. 110-. (canceled)11. A microelectromechanical system (MEMS) resonator comprising:a layer of degenerately-doped polycrystalline silicon;a layer of degenerately-doped single-crystal silicon; anda layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer.12. The MEMS resonator of wherein the layer of piezoelectric material comprises aluminum nitride.13. The MEMS resonator of wherein the degenerately-doped single-crystal silicon layer is at least 10 times thicker than the layer of piezoelectric material.14. The MEMS resonator of wherein the layers of degenerately-doped polycrystalline silicon claim 11 , degenerately-doped single-crystal silicon and piezoelectric material form a resonator body and one or more tethering structures that mechanically couple the resonator body to anchoring points within a field area.15. The MEMS resonator of wherein the layer of degenerately-doped polycrystalline silicon comprises a first electrode within the resonator body and a first conductive path within each of the one or more tethering structures to enable the first electrode to be electrically coupled claim 14 , through at least one of the tethering structures claim 14 , to a first node of a voltage source external to the resonator.16. The MEMS resonator of wherein the layer of degenerately-doped single-crystal silicon comprises a second electrode within the resonator body and a second conductive path within each of the one or more tethering structures to enable the second electrode to be electrically coupled to a second node of ...

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Номер записи: 52
07-04-2016 дата публикации

Temperature compensated beam resonator

Номер: US20160099703A1
Автор: Antti Jaakkola, Mika Prunnila, Panu Pekko, Tuomas Pensala
Принадлежит: Valtion teknillinen tutkimuskeskus

The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*10 20 cm −3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

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Номер записи: 53
16-04-2015 дата публикации

Vibrator, oscillator, electronic device, and moving object

Номер: US20150102865A1
Автор: Kazuyuki Nagata, Ryuji Kihara
Принадлежит: Seiko Epson Corp

A MEMS vibrator includes: a substrate; a base portion which is disposed on the substrate; and a plurality of vibration portions which extends in a direction that intersects with a normal line of the substrate from the base portion. In a planar view, when a length of the vibration portion in a direction in which the vibration portion extends from the base portion is L, and a length of the vibration portion in a direction that intersects with a direction in which the vibration portion extends from the base portion is W, a dimension ratio (L/W) of the vibration portion satisfies a relationship in which 0.2≦(L/W)≦7.0.

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Номер записи: 54
05-04-2018 дата публикации

Nano- and Microelectromechanical Resonators

Номер: US20180097499A1
Автор: Cassella Cristian, Hui Yu, Qian Zhenyun, Rinaldi Matteo
Принадлежит:

A resonator includes a piezoelectric plate and interdigitated electrode(s). The interdigitated electrode includes a plurality of conductive strips disposed over a top surface of the piezoelectric plate. A two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric plate in response to an alternating voltage applied through the interdigitated electrode. The two-dimensional mode of mechanical vibration is a cross-sectional Lamé mode resonance (CLMR) or a degenerate cross-sectional Lamé mode resonance (dCLMR). 1. A resonator comprising:a piezoelectric layer having a length direction (L), a width direction (W), and a thickness direction (T);a first conductive layer including at least one first electrode disposed over a top surface of the piezoelectric layer, wherein the top surface extends along the length direction and the width direction;a second conductive layer including at least one second electrode disposed over a bottom surface of the piezoelectric layer, wherein the bottom surface extends along the length direction and the width direction;wherein a two-dimensional mode of mechanical vibration is excited in a cross-sectional plane of the piezoelectric layer in response to at least one signal provided to the at least one first electrode and/or the at least one second electrode-, and wherein the excited two-dimensional mode of vibration is a cross-sectional Lamé mode, a degenerate cross-sectional Lamé mode, or is the result of two or more Lamb wave modes excited in the piezoelectric layer simultaneously;wherein a two-dimensional mode of mechanical vibration in a cross-sectional plane of the piezoelectric layer is sensed through piezoelectrically generated charge collected by the at least one first electrode and/or the at least one second electrode;wherein the cross-sectional plane extends along the width direction and the thickness direction;wherein the frequency of the two-dimensional mode of mechanical vibration is ...

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Номер записи: 55
01-04-2021 дата публикации

CAPACITIVE COUPLING TUNER

Номер: US20210098855A1
Автор: Chong Yin-Shing, Zhang Yunchi
Принадлежит:

Apparatuses, methods of assembling a resonator, and methods of tuning a resonator are provided. An example apparatus may include at least one resonator, at least one input tap coupled to the at least one resonator via capacitive coupling, and at least one tuning element that comprises at least one plate of material. At least a portion of the at least one tuning element may be configured to be positioned between the at least one resonator and the at least one input tap. The at least one tuning element may be configured to be positioned between the at least one resonator and the at least one input tap by at least one spring retention element. 1. An apparatus , comprising:at least one resonator;at least one input tap coupled to the at least one resonator via capacitive coupling; and wherein at least a portion of the at least one tuning element is configured to be positioned between the at least one resonator and the at least one input tap, and', 'wherein the at least one tuning element is configured to be positioned between the at least one resonator and the at least one input tap by at least one spring retention element., 'at least one tuning element that comprises at least one plate of material,'}2. The apparatus according to claim 1 , wherein the at least one tuning element comprises at least one slot through the at least one tuning element.3. The apparatus according to claim 2 , wherein adhesive is applied in the at least one slot of the at least one tuning element to secure the at least one tuning element in place to at least one other element of the apparatus.4. The apparatus according to claim 1 , wherein the at least one plate of material comprises at least one plate of dielectric material that has a dielectric constant of at least 2.0.5. The apparatus according to claim 4 , wherein the at least one plate of dielectric material comprises polytetrafluoroethylene (PTFE) or polythermide (PEI).6. The apparatus according to claim 1 , further comprising: 'wherein at ...

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Номер записи: 56
01-04-2021 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20210099151A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. (canceled)2. A tunable resonator module comprising a variable capacitor coupled in parallel with a resonator module including one or more resonators and one or more switches to switch in or switch out corresponding one or more resonators: [ [ i) is a function of a fixed resonant frequency of each resonators of the one or more resonators; and', 'ii) is to be modulated by closing and/or opening switches of the one or more switches to bypass and/or include resonators of the one or more resonators, and, 'a1) a passband of the tunable resonator module, 'a2) a stopband of the tunable resonator module is to be modulated by varying the variable capacitor; and/or, 'A) series configuration wherein, [ i) is a function of a fixed resonant frequency of each resonator of the one or more resonators; and', 'ii) is to be modulated by closing and/or opening switches of the one or more switches to bypass and/or include resonators of the one or more resonators;, 'b1) a stopband of the tunable resonator module, iii) is a function of the fixed anti-resonant frequency of each resonators of the one or more resonators, and', 'vi) is to be modulated by the variable capacitor., 'b2) a passband of the tunable resonator module], 'B) shunt configuration wherein], 'wherein the tunable resonator module is implementable in a3. The tunable resonator module of claim 2 , wherein the one or more switches are controlled by one or more switch control signals.4. A tunable resonator module system comprising a plurality of tunable resonator modules according to .5. The tunable resonator ...

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Номер записи: 57
01-04-2021 дата публикации

PIEZOELECTRIC MICROELECTROMECHANICAL RESONATOR DEVICE AND CORRESPONDING MANUFACTURING PROCESS

Номер: US20210099154A1
Автор: Allegato Giorgio, CORSO Lorenzo, GATTERE Gabriele, VERCESI Federico
Принадлежит:

A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure. 1. A micro-electro-mechanical system resonator device , comprising:a main body having a first layer with a first surface and a second layer with a second surface opposite to the first surface along an axis, the second layer having an internal cavity facing the first layer along the axis, the first layer including a mobile element overlapping the internal cavity and suspended in a cantilever fashion relative to the internal cavity;a bonding element;a cap having first surface and a second surface opposite to one another along the axis, and the first surface of the cap bonded to the first surface of the main body by the bonding element, the cap including a housing cavity overlapping the internal cavity, the mobile element suspended in the cantilever fashion relative to the housing cavity; and the mobile element, configured as a bottom electrode;', 'a piezoelectric region of a piezoelectric material, arranged on said mobile element at the first surface of the main body; and', 'a top electrode arranged on the ...

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Номер записи: 58
28-03-2019 дата публикации

RESONATOR AND RESONANCE DEVICE

Номер: US20190097600A1
Автор: GOTO Yuichi, INOUE YOSHIHISA, Kawai Ryota, Morinaga Shungo, Nishimura Toshio, Takeyama Keisuke, Yoshii Kentaro
Принадлежит:

A resonator is provided having a first electrode and a second electrode; and a piezoelectric film that is disposed between the first and second electrodes, has an upper surface opposing the first electrode, and that vibrates in a predetermined vibration mode when a voltage is applied between the first and second electrodes. Moreover, the resonator includes a protective film made of an insulator and disposed opposing the upper surface of the piezoelectric film with the first electrode interposed therebetween. Furthermore, a conductive film made of a conductor is provided that is disposed opposing the upper surface of the piezoelectric film with the protective film interposed therebetween, where the conductive film is electrically connected to any one of the first and second electrodes. 1. A resonator comprising:a first electrode and a second electrode;a piezoelectric film disposed between the first and second electrodes, the piezoelectric film having an upper surface that opposes the first electrode;a protective film comprising an insulator and disposed opposing the upper surface of the piezoelectric film with the first electrode interposed between the protective film and the upper surface of the piezoelectric film; anda conductive film disposed opposing the upper surface of the piezoelectric film with the protective film interposed between the conductive film and the upper surface of the piezoelectric film,wherein the conductive film is electrically connected to at least one of the first electrode and the second electrode.2. The resonator according to claim 1 , wherein the piezoelectric film is configured to vibrate in a predetermined vibration mode when a voltage is applied between the first and second electrodes.3. The resonator according to claim 1 , wherein the conductive film is a frequency adjusting film configured to adjust a resonant frequency of the resonator.4. The resonator according to claim 1 ,wherein the upper surface of the piezoelectric film includes ...

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Номер записи: 59
26-03-2020 дата публикации

ELECTRONIC PACKAGES COMPRISING STACKED BULK ACOUSTIC WAVE (BAW) RESONATOR and BAW RESONATOR FILTERS

Номер: US20200099365A1
Автор: CHOY John, FENG Chris
Принадлежит:

An electronic package includes a first substrate and a second substrate disposed beneath the first substrate. The electronic package also includes a perimeter wall extending between an inner surface of the first substrate and an opposing inner surface of the second substrate to provide separation between the first substrate and the second substrate. A cavity exists between opposing inner surfaces of the first substrate and the second substrate. A first filter comprising a first plurality of bulk acoustic wave (BAW) resonators disposed over the inner surface first substrate. The electronic package also includes a second filter comprising a second plurality of BAW resonators disposed over the second substrate 1. An electronic package , comprising:a first substrate;a second substrate disposed beneath the first substrate; anda perimeter wall extending between an inner surface of the first substrate and an opposing inner surface of the second substrate to provide separation between the first substrate and the second substrate, wherein a cavity exists between opposing inner surfaces of the first substrate and the second substrate;a first filter comprising a first plurality of bulk acoustic wave (BAW) resonators disposed over the inner surface of the first substrate; anda second filter comprising a second plurality of BAW resonators disposed over the second substrate.2. The electronic package as claimed in claim 1 , wherein the perimeter wall is a first perimeter wall claim 1 , the cavity is a first cavity claim 1 , and the electronic package further comprises:a third substrate disposed over the second substrate; anda second perimeter wall extending between a surface of the first substrate and an opposing inner surface of the second substrate to provide separation between the first substrate and the second substrate, wherein a second cavity exists between opposing inner surfaces of the first substrate and the third substrate.3. The electronic package as claimed in claim 2 ...

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Номер записи: 60
23-04-2015 дата публикации

Low-loss tunable radio frequency filter

Номер: US20150113497A1
Автор: Balam A. Willemsen, Genichi Tsuzuki
Принадлежит: Resonant Inc

A method of constructing an RF filter comprises designing an RF filter that includes a plurality of resonant elements disposed, a plurality of non-resonant elements coupling the resonant elements together to form a stop band having a plurality of transmission zeroes corresponding to respective frequencies of the resonant elements, and a sub-band between the transmission zeroes. The non-resonant elements comprise a variable non-resonant element for selectively introducing a reflection zero within the stop band to create a pass band in the sub-band. The method further comprises changing the order in which the resonant elements are disposed along the signal transmission path to create a plurality of filter solutions, computing a performance parameter for each of the filter solutions, comparing the performance parameters to each other, selecting one of the filter solutions based on the comparison of the computed performance parameters, and constructing the RF filter using the selected filter solution.

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Номер записи: 61
21-04-2016 дата публикации

Vibration device

Номер: US20160111627A1
Автор: Hiroaki Kaida, Takashi Hase, Toshio Nishimura
Принадлежит: Murata Manufacturing Co Ltd

A vibration device that includes a vibration portion, a support portion connected to the vibration portion, a bending-vibrating portion connected to the support portion, and a frame-shaped base portion connected to the bending-vibration portion and disposed so as to surround the vibration portion. The base portion defines a slit that extends in a first direction crossing a second direction in which the support portion extends from the vibration portion, the slit defining first and second fixed ends of the bending-vibrating portion and which are continuous with the base portion. A length between a portion of the bending-vibrating portion connected to the support portion to one of the first and second fixed ends of the bending-vibrating portion is in a range of λ/8 to 3λ/8, where λ denotes a wavelength of a bending vibration corresponding to a frequency of a characteristic vibration of the vibration portion.

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Номер записи: 62
11-04-2019 дата публикации

RESONATOR AND RESONANCE DEVICE

Номер: US20190109578A1
Автор: Fukumitsu Masakazu, GOTO Yuichi
Принадлежит:

A resonator that includes a vibrating portion that has a piezoelectric film, and a lower and upper electrodes that face each other with the piezoelectric film interposed therebetween. Moreover, a holding portion is provided at least around a maximum displacement region of the vibrating portion and has an insulating film. A holding arm connects the vibrating portion and the holding portion, and include a conductive portion that is in contact with the insulating film of the holding portion in at least a region that faces the maximum displacement region of the vibrating portion. In addition, the conductive portion is electrically connected to the lower electrode or the upper electrode or is grounded. 1. A resonator comprising:a vibrating portion including a piezoelectric film and lower and upper electrodes that face each other with the piezoelectric film disposed therebetween;a holding member having an insulating film and being disposed at least around a maximum displacement region of the vibrating portion;a holding arm that connects the vibrating portion to the holding member; anda conductive portion disposed in contact with the insulating film of the holding member at least in a region of the holding member that faces the maximum displacement region of the vibrating portion,wherein the conductive portion is electrically connected to one of the lower electrode and the upper electrode or is grounded.2. The resonator according to claim 1 , wherein the holding member comprises a frame shape that completely surrounds the vibrating portion.3. The resonator according to claim 2 , wherein the conductive portion is disposed in contact with an inner edge of the holding member.4. The resonator according to claim 3 , wherein the inner edge of the holding member faces the vibrating portion.5. The resonator according to claim 1 ,wherein the vibrating portion is a contour resonator having a rectangular contour, andwherein the conductive portion is disposed at least in regions of ...

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Номер записи: 63
07-05-2015 дата публикации

MEMS/NEMS DEVICE COMPRISING A NETWORK OF ELECTROSTATICALLY ACTUATED RESONATORS AND HAVING AN ADJUSTABLE FREQUENCY RESPONSE, NOTABLY FOR A BAND-PASS FILTER

Номер: US20150123745A1
Автор: Arcamone Julien, Arndt Gregory
Принадлежит:

A MEMS/NEMS device having an adjustable frequency response comprises an array of electrostatically actuated resonators, an electrostatic actuation circuit, electrical detection means, and means adjusting the frequency response of the resonators. The device comprises resonators having a movable portion, electrically connected in series between a first biasing potential Vand a second biasing potential V, each resonator biased to a potential Vi between Vand V, depending on position in the series. The electrostatic actuation circuit comprises, for each resonator, an actuation electrode facing the movable portion, all electrodes being connected in parallel to a common control potential V, the actuation voltage of each resonator being equal to V−Vi. The detection means comprises a detection output common to all resonators, the output being connected to an output potential V. The means for adjusting the frequency response varies the common control potential and/or at least one of the biasing potentials. 1. A MEMS/NEMS device having an adjustable frequency response and comprising an array of electrostatically actuated resonators , an electrostatic actuation circuit for actuating said resonators , electrical detection means , and means for adjusting the frequency response of all of said resonators , in which:{'sub': B', 'B2', 'B', 'B2, 'said device comprises at least one network of n resonators having a movable portion, said n resonators being electrically connected in series between a first biasing potential Vand a second biasing potential V, each ith resonator being biased to a potential Vi comprised between said potential Vand said potential V, depending on its position in the series;'}{'sub': IN', 'IN, 'said electrostatic actuation circuit for actuating said resonators comprises, for each resonator, an actuation electrode facing said movable portion of the resonator, all of said actuation electrodes being connected in parallel to a common control potential V, the ...

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Номер записи: 64
27-04-2017 дата публикации

ACOUSTIC RESONATOR DEVICES AND METHODS PROVIDING PATTERNED FUNCTIONALIZATION AREAS

Номер: US20170117871A1
Автор: Belsick John, Rivas Rio, Ryder Matthew
Принадлежит:

A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with an interface layer including a material having a surface (e.g., gold or other noble metal, or a hydroxylated oxide) that may be functionalized with a functionalization (e.g., specific binding or non-specific binding) material. The interface layer and/or an overlying blocking material layer are precisely patterned to control locations of the interface layer available to receive a self-assembled monolayer (SAM), thereby addressing issues of misalignment and oversizing of a functionalization zone that would arise by relying solely on microarray spotting. Atomic layer deposition may be used for deposition of the interface layer and/or an optional hermeticity layer. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided. 1. A micro-electrical-mechanical system (MEMS) resonator device comprising:a substrate;a bulk acoustic wave resonator structure arranged over at least a portion of the substrate, the bulk acoustic wave resonator structure including a piezoelectric material, a top side electrode arranged over a portion of the piezoelectric material, and a bottom side electrode arranged between the piezoelectric material and the substrate, wherein a portion of the piezoelectric material is between the top side electrode and the bottom side electrode to form an active region;an interface layer arranged over at least a portion of the active region, wherein less than an entirety of the piezoelectric material is overlaid with interface layer material that is available to receive a self-assembled monolayer (SAM); andthe self-assembled monolayer arranged over at least a portion of the interface layer.2. The MEMS resonator device of claim 1 , wherein the interface layer comprises a hydroxylated oxide surface claim 1 , and the self-assembled monolayer comprises an organosilane material.3. The MEMS resonator device of claim 1 , wherein the ...

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Номер записи: 65
03-05-2018 дата публикации

TEMPERATURE-COMPENSATED MICRO-ELECTROMECHANICAL DEVICE, AND METHOD OF TEMPERATURE COMPENSATION IN A MICRO-ELECTROMECHANICAL DEVICE

Номер: US20180118561A1
Автор: Lasalandra Ernesto, MERASSI Angelo, Zerbini Sarah
Принадлежит:

A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for. 1. A device , comprising:a substrate;a first plurality of electrodes, the first plurality of electrodes being fixed to the substrate and having first faces and opposite second faces;a first suspended mass elastically coupled to the substrate, the first suspended mass being movable relative to the substrate;a second plurality of electrodes extending from the first suspended mass, the second plurality of electrodes being movable relative to the substrate, the second plurality of electrodes being capacitively coupled to the first plurality of electrodes, the second plurality of electrodes having first faces and opposite second faces, the first faces of the first plurality of electrodes facing the second faces of the second plurality of electrodes;a third plurality of electrodes, the third plurality of electrodes being fixed to the substrate and having first faces and opposite second faces;a second suspended mass rigidly coupled to the substrate, the second suspended mass having a fixed position relative to the substrate, the first suspended mass and the second suspended mass being configured to undergo substantially equal strains as a ...

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Номер записи: 66
04-05-2017 дата публикации

FLUIDIC DEVICE WITH FLUID PORT ORTHOGONAL TO FUNCTIONALIZED ACTIVE REGION

Номер: US20170122912A1
Автор: Fattinger Gernot, Rivas Rio
Принадлежит:

A fluidic device includes at least one bulk acoustic wave (BAW) resonator structure with a functionalized active region, and at least one first (inlet) port defined through a cover structure arranged over a fluidic passage containing the active region. At least a portion of the at least one inlet port is registered with the active region, permitting fluid to be introduced in a direction orthogonal to a surface of the active region bearing functionalization material. Such arrangement promotes mixing proximate to a BAW resonator structure surface, thereby reducing analyte stratification, increasing analyte binding rate, and reducing measurement time. 1. A fluidic device comprising:a base structure comprising: (i) a substrate; (ii) at least one bulk acoustic wave resonator structure supported by the substrate, the at least one bulk acoustic wave resonator structure including a piezoelectric material, a top side electrode arranged over a portion of the piezoelectric material, and a bottom side electrode arranged below at least a portion of the piezoelectric material, wherein a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region; and (iii) at least one functionalization material arranged over at least a portion of the active region;a wall structure arranged over at least a portion of the base structure and defining lateral boundaries of a fluidic passage arranged to receive a fluid and containing the active region; anda cover structure arranged over the wall structure and defining an upper boundary of the fluidic passage;wherein the cover structure defines at least one first port that is in fluid communication with the fluidic passage, and at least a portion of the at least one first port is registered with the active region.2. The fluidic device of claim 1 , wherein the wall structure and the cover structure are embodied in a monolithic body structure.3. The fluidic device of claim 1 , ...

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Номер записи: 67
03-05-2018 дата публикации

FILTER DEVICE, MULTIPLEXER, RADIO-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE

Номер: US20180123547A1
Автор: Kato Masanori, KIDO Syunsuke
Принадлежит:

A filter includes two series arm resonators electrically connected in series between two input/output terminals, a parallel arm resonator electrically connected between a ground and a series arm between the two series arm resonators, an inductor electrically connected in parallel to the two series arm resonators, and a matching circuit electrically connected between one of the two series arm resonators and one of the input/output terminals, wherein the two series arm resonators and the parallel arm resonator define a pass band of a bandpass filter, the two series arm resonators and the inductor define an LC resonant circuit, respective anti-resonant frequencies of each of the two series arm resonators and a resonant frequency of the parallel arm resonator are located in a pass band of the LC resonant circuit, and a resonant frequency of the LC resonant circuit is lower than the resonant frequency of the parallel arm resonator. 1. A filter device comprising:a first series arm resonator and a second series arm resonator electrically connected in series between a first terminal and a second terminal, the first series arm resonator being located on a side closer to the first terminal, the second series arm resonator being located on a side closer to the second terminal;a parallel arm resonator electrically connected between a ground and a series arm between the first series arm resonator and the second series arm resonator;a first inductor electrically connected in parallel to the first series arm resonator and the second series arm resonator; anda matching circuit electrically connected between the second series arm resonator and the second terminal or between the first series arm resonator and the first terminal; whereinthe first series arm resonator, the second series arm resonator, and the parallel arm resonator define a pass band of a bandpass filter;the first series arm resonator, the second series arm resonator, and the first inductor define an LC resonant ...

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Номер записи: 68
03-05-2018 дата публикации

Tunable bulk acoustic resonator device with improved insertion loss

Номер: US20180123562A1
Автор: Paul Bradley
Принадлежит: Avago Technologies General IP Singapore Pte Ltd

A tunable BAW filter device operating in an allocated channel of a predetermined frequency band includes a voltage source and multiple BAW resonators. The voltage source selectively provides non-zero DC bias voltage based on a location of the allocated channel within the frequency band. Each BAW resonator has a resonance frequency, and includes a bottom electrode, a piezoelectric layer and a top electrode disposed over the piezoelectric layer, the top electrode being electrically connected to the voltage source via a resistor. The voltage source is activated, applying the non-zero DC bias voltage to the top electrode of each BAW resonator, when the location of the allocated channel is near an upper or lower corner of the frequency band. The resonance frequency of each BAW resonator is shifted in response to the non-zero DC bias voltage toward a center of the frequency band, improving insertion loss of the BAW filter device.

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Номер записи: 69
03-05-2018 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20180123563A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. A filter module for providing a pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA); anda capacitor module coupled in parallel to the AWR, the capacitor module configured to modify the transduction of the electrical signal by the AWR.2. A filter module for providing a tunable pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA);a first capacitor module coupled in parallel to the AWR, the first capacitor module configured to modify the transduction of the electrical signal by the AWR; anda second capacitor module coupled in series to the AWR and the first capacitor module, the second capacitor module configured to modify the transduction of the electrical signal by the AWR.3. The filter module of claim 1 , wherein the capacitor modifies at least one of the AFA and RFA.4. The filter module of claim 2 , wherein the first capacitor module or the second capacitor module or a combination thereof modifies at least one of the RFA and AFA.5. The filter module of claim 1 , wherein the capacitor module is a variable capacitor.6. The filter module of claim 2 , wherein at least one of the first capacitor module and the second capacitor module are variable capacitors.7. A filter module for providing a switchable pass-band and a tunable rejection band claim 2 , the filter module comprising:an acoustic wave resonator (AWR), the AWR having a ...

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Номер записи: 70
27-05-2021 дата публикации

HIGH ELECTROMECHANICAL COUPLING STRENGTH HOLLOW DISK RESONATORS

Номер: US20210159868A1
Автор: LI YAFEI, Nguyen Clark T.-C., Ozgurluk Alper
Принадлежит: The Regents of the University of California

System and methods for a hollow-disk radial-contour mode resonator structure. The hollow disk reduces the dynamic mass and stiffness of the structure. Since electromechanical coupling C/Cgoes as the reciprocal of mass and stiffness, the hollow disk structure has a considerably stronger electromechanical coupling than a solid one at the same frequency, and thus raises C/Cwithout excessive gap-scaling. Several embodiments of hollow disk resonators are detailed, including asymmetric and symmetric disk configurations. 1. A capacitive-gap transduced micromechanical resonator , comprising:a resonator structure;a first terminal disposed adjacent the resonator structure at a spaced-apart distance defined by an air gap; anda second terminal in proximity to the resonator structure;wherein the resonator structure comprises a hollowed cavity that reduces the dynamic mass and stiffness to increase electromechanical coupling of the resonator.2. The resonator of claim 1 , wherein the first terminal comprises a drive electrode and the second terminal comprises a sense electrode.3. The resonator of :wherein the resonator structure comprises a circular disk; andwherein the hollowed cavity forms a thin bottom disk having a radius R and a high-aspect-ratio circular edge ring of width of t.4. The resonator of claim 1 , wherein the resonator structure is configured to operate in radial-contour mode claim 1 , whispering gallery mode claim 1 , or wine-glass mode.5. The resonator of claim 3 , wherein the bottom disk provides stiffness and the edge ring increases electrode-to-resonator overlap area while minimizing mass to maximize electromechanical coupling.6. The resonator of claim 3 , wherein the disk is coupled to an interconnect layer via a centrally located stem.7. The resonator of claim 6 , wherein the stem is hollow.8. The resonator of claim 6 , wherein one or more surfaces of the disk comprise a molded structure.9. The resonator of claim 8 , wherein the resonator is fabricated ...

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Номер записи: 71
27-05-2021 дата публикации

Piezo-actuated mems resonator

Номер: US20210159875A1
Автор: Charles I. Grosjean, Ginel C. Hill, Joseph C. Doll, Nicholas Miller, Paul M. Hagelin
Принадлежит: Sitime Corp

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

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Номер записи: 72
11-05-2017 дата публикации

ACOUSTIC RESONATOR DEVICES AND FABRICATION METHODS PROVIDING HERMETICITY AND SURFACE FUNCTIONALIZATION

Номер: US20170134001A1
Автор: Belsick John, Morton Rick, Ryder Matthew
Принадлежит:

A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with a low water permeability hermeticity layer and an interface layer including a material (e.g., gold or a hydroxylated oxide surface) suitable for receiving a self-assembled monolayer (SAM) that may be functionalized with a functionalization (e.g., specific binding) material, with the foregoing layers being designed to have insubstantial impact on sensor performance. Atomic layer deposition may be used for deposition of the hermeticity and/or interface layers. The hermeticity layer protects the electrode material from attack in corrosive liquid environments, and the interface layer facilitates proper chemical binding of the SAM. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided. 1. A micro-electrical-mechanical system (MEMS) resonator device comprising:a substrate;a bulk acoustic wave resonator structure arranged over at least a portion of the substrate, the bulk acoustic wave resonator structure including at least one top side electrode;{'sup': '2', 'a hermeticity layer arranged over at least a portion of the at least one top side electrode, the hermeticity layer comprising a dielectric material including a water vapor transmission rate of no greater than 0.1 (g/m/day);'}an interface layer arranged over at least a portion of the hermeticity layer; andat least one functionalization material arranged over at least a portion of the interface layer;wherein the bulk acoustic wave resonator structure comprises at least one active region below the at least one top side electrode, and at least a portion of each of the hermeticity layer, the interface layer, and the at least one functionalization material is arranged over the at least one active region.2. The MEMS resonator device of claim 1 , further comprising a self-assembled monolayer arranged between the interface layer and the at least one functionalization material.3. The MEMS ...

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Номер записи: 73
02-05-2019 дата публикации

MICROELECTROMECHANICAL RESONATOR SYSTEM WITH IMPROVED STABILITY WITH RESPECT TO TEMPERATURE VARIATIONS

Номер: US20190131952A1
Автор: GATTERE Gabriele, Langfelder Giacomo, TOCCHIO Alessandro, Valzasina Carlo
Принадлежит:

A MEMS resonator system has a micromechanical resonant structure and an electronic processing circuit including a first resonant loop that excites a first vibrational mode of the structure and generates a first signal at a first resonance frequency. A compensation module compensates, as a function of a measurement of temperature variation, a first variation of the first resonance frequency caused by the temperature variation to generate a clock signal at a desired frequency that is stable relative to temperature. The electronic processing circuit further includes a second resonant loop, which excites a second vibrational mode of the structure and generates a second signal at a second resonance frequency. A temperature-sensing module receives the first and second signals and generates the measurement of temperature variation as a function of the first variation of the first resonance frequency and a second variation of the second resonance frequency caused by the temperature variation. 1. A MEMS resonator system , comprising:a micromechanical resonant structure; andan electronic processing circuit coupled to the micromechanical resonant structure, the electronic processing circuit including:a first resonant loop configured to excite a first vibrational mode of the micromechanical resonant structure and to generate a first signal at a first resonance frequency;a second resonant loop configured to excite a second vibrational mode of the micromechanical resonant structure and to generate a second signal at a second resonance frequency;a temperature-sensing module configured to receive the first signal and the second signal and to generate a measurement of temperature variation as a function of a first variation of the first resonance frequency and as a function of a second variation of the second resonance frequency; anda compensation module configured to receive the first signal and to compensate, as a function of the measurement of temperature variation, the first ...

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Номер записи: 74
02-05-2019 дата публикации

INTERDIGITAL TRANSDUCERS ON A PIEZOELECTRIC THIN-FILM FOR SIGNAL COMPRESSION

Номер: US20190131953A1
Автор: Gong Songbin, Lu Ruochen, Manzaneque Garcia Tomas
Принадлежит:

A piezoelectric thin-film suspended above a carrier substrate. An input interdigital transducer (IDT) having first interdigitated electrodes is disposed at different locations along the horizontal axis and on the first side of the piezoelectric thin-film. Each opposing pair of the first interdigitated electrodes is to selectively transduce a particular frequency range of an input electrical signal that varies in frequency over time into an acoustic wave of a laterally vibrating mode based on a pitch between electrodes of the opposing pair. An output IDT that includes second interdigitated electrodes is disposed at different locations along the horizontal axis and on the second side of the piezoelectric thin-film. Each opposing pair of the second interdigitated electrodes is to convert the acoustic wave transduced by the respective opposing pair of the first interdigitated electrodes into a compressed pulse. 1. An apparatus , comprising:a piezoelectric thin-film suspended above a carrier substrate, the piezoelectric thin-film having a horizontal axis orientated along a length of the piezoelectric thin-film and a center axis orientated along a width of the piezoelectric thin-film, wherein the horizontal axis is perpendicular to the center axis, and wherein the piezoelectric thin-film comprises a first side and a second side with respect to the center axis;an input interdigital transducer (IDT) comprising first interdigitated electrodes disposed at different locations along the horizontal axis and on the first side of the piezoelectric thin-film, wherein each opposing pair of the first interdigitated electrodes is to selectively transduce a particular frequency range of an input electrical signal that varies in frequency over time into an acoustic wave of a laterally vibrating mode based on a pitch between electrodes of the opposing pair; andan output IDT comprising second interdigitated electrodes disposed at different locations along the horizontal axis and on the ...

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Номер записи: 75
03-06-2021 дата публикации

Resonance device

Номер: US20210167751A1
Автор: Ryota Kawai, Yuichi Goto
Принадлежит: Murata Manufacturing Co Ltd

A resonance device is provided that includes a resonator including upper electrodes, a lower electrode, and a piezoelectric thin film formed therebetween. An upper cover is provided with a first surface facing the upper electrodes of the resonator. A power supply terminal is provided on a second surface of the upper cover with the power supply terminal electrically connected to the upper electrodes. Another power supply terminal is on the second surface of the upper cover and is electrically connected to the upper electrodes. A ground terminal is provided on the second surface of the upper cover and is electrically connected to the lower electrode. An area of each power supply terminal are different from one other such that a capacitance formed between the first power supply terminal and the ground terminal is approximately equal to a capacitance formed between the second power supply terminal and the ground terminal.

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Номер записи: 76
17-05-2018 дата публикации

PIEZOELECTRIC MICROMECHANICAL RESONATOR

Номер: US20180138886A1
Автор: Kang Sungchan, KIM Cheheung, PARK SANGHA, RHEE Choongho, YOON Yongseop
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A piezoelectric micromechanical resonator includes a supporting beam including a fixed edge that is fixed to a supporting member and a free edge opposite the fixed edge, a piezoelectric sensor including an edge attached to the supporting member, the piezoelectric sensor further including a lower electrode, a piezoelectric unit, and an upper electrode sequentially stacked on a surface of the supporting beam, and a lumped mass provided on the surface of the supporting beam at a side of the supporting beam including the free edge, the upper electrode having a Young's modulus smaller than a Young's modulus of the lower electrode. 1. A piezoelectric micromechanical resonator comprising:a supporting beam comprising a fixed edge that is fixed to a supporting member and a free edge opposite the fixed edge;a piezoelectric sensor comprising an edge attached to the supporting member, the piezoelectric sensor further comprising a lower electrode, a piezoelectric unit, and an upper electrode sequentially stacked on a surface of the supporting beam; anda lumped mass provided on the surface of the supporting beam at a side of the supporting beam comprising the free edge,wherein the upper electrode has a Young's modulus smaller than a Young's modulus of the lower electrode.2. The piezoelectric micromechanical resonator of claim 1 , wherein the lower electrode comprises molybdenum and the upper electrode comprises aluminum.3. The piezoelectric micromechanical resonator of claim 1 , wherein the upper electrode has a thickness smaller than a thickness of the lower electrode.4. The piezoelectric micromechanical resonator of claim 1 , wherein the supporting beam comprises a sensing region configured to sense tensile stress or compressive stress and provided under the piezoelectric sensor and a non-sensing region which is a remaining region of the supporting beam claim 1 , the sensing region having a thickness smaller than a thickness of the non-sensing region.5. The piezoelectric ...

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Номер записи: 77
17-05-2018 дата публикации

Vibration transducer

Номер: US20180138887A1
Автор: Hiroshi Suzuki, Takeshi Mishima
Принадлежит: Yokogawa Electric Corp

A vibration transducer includes a silicon substrate, a first oxide film formed on the silicon substrate, an activation layer formed on the first oxide film, a second oxide film formed on the activation layer, a polysilicon layer formed on the second oxide film, and a substrate contact part. A vibrator, a vibrator electrode electrically conducted with the vibrator, a fixed electrode close to the vibrator and a vacuum chamber configured to surround the vibrator are formed in the activation layer. The polysilicon layer forms a shell. The substrate contact part is configured to electrically conduct the polysilicon layer and the silicon substrate, and is formed to continuously surround the vacuum chamber in a region, in which the vibrator, the vibrator electrode and the fixed electrode of the activation layer are not formed, of the activation layer.

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Номер записи: 78
09-05-2019 дата публикации

Pitch/roll annulus gyroscope with slanted quadrature tuning electrodes and related fabrication methods

Номер: US20190137271A1
Автор: Anosh Daruwalla, Farrokh Ayazi, Haoran Wen
Принадлежит: Georgia Tech Research Corp

A bulk acoustic wave resonator apparatus includes a resonator member having an annulus shape, and at least one anchor structure coupling the resonator member to a substrate. A perimeter of the resonator member is at least partially defined by respective sidewalls that are slanted at an angle relative to a plane defined by a surface of the resonator member. The surface of the resonator member may be defined by a (100) crystal plane, and the angle of the respective sidewalls may be defined by a (111) crystal plane. Related fabrication methods are also discussed.

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Номер записи: 79
18-05-2017 дата публикации

RF Filter

Номер: US20170141757A1
Автор: Edgar Schmidhammer
Принадлежит: SnapTrack Inc

An RF filter is disclosed. In an embodiment, the RF filter includes series-interconnected basic elements, each basic element having an electroacoustic resonator and impedance converters interconnected in series between the basic elements, wherein the impedance converters are impedance inverters and/or admittance inverters, and wherein the resonators of the basic elements are either only series resonators or only parallel resonators.

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Номер записи: 80
09-05-2019 дата публикации

MICROELECTROMECHANICAL SYSTEM RESONATOR DEVICES AND OSCILLATOR CONTROL CIRCUITS

Номер: US20190140612A1
Автор: BOUCHAMI ANOIR, ELSAYAD MOHANNAD, Nabki Frederic
Принадлежит:

Reference oscillators are ubiquitous in timing applications generally, and in modern wireless communication devices particularly. Microelectromechanical system (MEMS) resonators are of particular interest due to their small size and potential for integration with other MEMS devices and electrical circuits on the same chip. In order to support their use in high volume low cost applications it would be beneficial for MEMS designers to have MEMS resonator designs and manufacturing processes that whilst employing low cost low resolution semiconductor processing yield improved resonator performance thereby reducing the requirements of the oscillator circuitry. It would be further beneficial for the oscillator circuitry to be able to leverage the improved noise performance of differential TIAs without sacrificing power consumption. 1. A method for providing a microelectromechanical systems (MEMS) device comprising:executing a first process sequence for manufacturing upon a silicon substrate a plurality of die each comprising a MEMS resonator having features compliant with the processing and design guidelines of the first processing sequence, the MEMS resonator comprising a central region anchored to the silicon substrate by a plurality of anchor beam supports;executing a second processing sequence upon a predetermined portion of the plurality of die to reduce feature dimensions of a first predetermined portion of each die, the first predetermined portion of the die comprising at least the width of the plurality of anchor beam supports.2. The method according to claim 1 , whereinthe first manufacturing sequence includes the deposition and patterning of a piezoelectric material;the MEMS resonator is a bulk-mode disk resonator; andthe MEMS resonator is traverse piezoelectrically actuated in a wine-glass bulk resonance mode.3. The method according to claim 1 , wherein 'a first process selectively etching at least one predetermined material forming part of the first ...

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Номер записи: 81
09-05-2019 дата публикации

CO-INTEGRATED BULK ACOUSTIC WAVE RESONATORS

Номер: US20190140621A1
Автор: Edrees Hassan, Kinget Peter, Kymissis Ioannis
Принадлежит:

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures. 1. An electrical circuit assembly , comprising:a semiconductor integrated circuit comprising one or more transistor structures; anda first lateral-mode resonator fabricated upon a surface of a semiconductor integrated circuit, the first lateral-mode resonator comprising:an acoustic energy storage layer;a piezoelectric layer acoustically coupled to the acoustic energy storage layer; anda first conductive region electrically coupled to the piezoelectric layer and electrically coupled to the semiconductor integrated circuit.2. The electrical circuit assembly of claim 1 , comprising a first functionalized layer located upon the first lateral-mode resonator claim 1 , the first functionalized layer configured to interact with a first species in proximity to the first lateral-mode resonator in a manner altering a mass of the first lateral-mode resonator in a presence of the first species.3. The electrical circuit assembly of claim 2 , comprising an array of lateral-mode resonators;wherein the first lateral-mode resonator is included amongst other lateral-mode resonators comprising the ...

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Номер записи: 82
30-04-2020 дата публикации

ACOUSTIC FILTER APPARATUS HAVING CONFIGURABLE PARALLEL RESONANCE FREQUENCIES

Номер: US20200136589A1
Автор: Khlat Nadim
Принадлежит:

An acoustic filter apparatus is provided. In examples discussed herein, the acoustic filter apparatus includes an acoustic ladder network configured to pass a signal in a series resonance frequency and block the signal in a number of parallel resonance frequencies. The acoustic ladder network is coupled to a microelectromechanical systems (MEMS) switch circuit that includes a number of MEMS switches. The MEMS switches may be selectively controlled (e.g., closed and/or opened) to cause a modification to a selected parallel resonance frequency(s) among the parallel resonance frequencies. As such, it may be possible to flexibly configure the parallel resonance frequencies of the acoustic ladder network based on application scenarios. Further, by employing the MEMS switches having improved figure-of-merit (FOM) over conventional silicon-on-insulator (SOI) switches, it may be possible to reconfigure the parallel resonance frequencies with reduced insertion loss, thus helping to improve performance of the acoustic filter apparatus. 1. An acoustic filter apparatus comprising: resonate in a series resonance frequency to pass a signal from an input node to an output node; and', 'block the signal from the output node in a plurality of parallel resonance frequencies different from the series resonance frequency; and, 'an acoustic ladder network configured toa microelectromechanical systems (MEMS) switch circuit coupled to the acoustic ladder network and configured to cause a modification to at least one selected parallel resonance frequency among the plurality of parallel resonance frequencies.2. The acoustic filter apparatus of further comprising a control circuit configured to control the MEMS switch circuit to cause the at least one selected parallel resonance frequency to be modified.3. The acoustic filter apparatus of wherein the acoustic ladder network comprises: resonate in the series resonance frequency to pass the signal to the output node; and', 'block the signal ...

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Номер записи: 83
24-05-2018 дата публикации

RESONANT TRANSDUCER

Номер: US20180145656A1
Автор: NORO Makoto, YOSHIDA Takashi, Yoshida Yusaku, YOSHITA Shuhei, YUMOTO Atsushi
Принадлежит: YOKOGAWA ELECTRIC CORPORATION

A resonant transducer includes a resonant beam which is formed on a semiconductor substrate, a support beam of which one end is connected to a part of the resonant beam at a predetermined angle, a first electrode which is connected to the resonant beam via the support beam, a second electrode which is disposed adjacent to a center of one side surface of the resonant beam, and a conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode. 1. A resonant transducer comprising:a resonant beam which is formed on a semiconductor substrate;a support beam of which one end is connected to a part of the resonant beam at a predetermined angle;a first electrode which is connected to the resonant beam via the support beam;a second electrode which is disposed adjacent to a center of one side surface of the resonant beam; anda conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode.2. The resonant transducer according to claim 1 ,wherein the conductor is formed to surround the support beam.3. The resonant transducer according to claim 1 , a part which is parallel to one side surface of the support beam; and', 'a part which is parallel to the other side surface of the support beam., 'wherein the conductor comprises4. The resonant transducer according to claim 1 ,wherein the conductor comprises a part which is parallel to the one side surface of the resonant beam.5. The resonant transducer according to claim 1 ,wherein an angle which is formed by a direction heading from one end of the support beam toward the other end and a direction heading from a center of the resonant beam in a longitudinal direction toward the other end of the support beam is substantially a right angle, and resonance of the resonant beam is detected, where the resonance is based on temperature.6. The resonant transducer according to claim 1 , a first support beam ...

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Номер записи: 84
25-05-2017 дата публикации

ACOUSTIC RESONATOR WITH REDUCED MECHANICAL CLAMPING OF AN ACTIVE REGION FOR ENHANCED SHEAR MODE RESPONSE

Номер: US20170149408A1
Автор: Belsick John, Morton Rick
Принадлежит:

The present disclosure provides an acoustic resonator with reduced mechanical clamping of an active region for enhanced shear mode response. More specifically, the present disclosure provides a solidly mounted BAW resonator device with an active region of piezoelectric material laterally surrounded by an inactive region with a reduced thickness of piezoelectric material such that at least an upper portion of the inactive region along a boundary of the active region is devoid of piezoelectric material. The resonator device provides a discontinuity along opposing lateral edges of the piezoelectric material of the active region to reduce mechanical clamping of the active region in a direction of maximum lateral displacement in shear mode operation. Increasing the mechanical isolation of the active region of piezoelectric material decreases mechanical damping of lateral vibrations of the active region which enhances the shear mode response for quasi-shear mode sensing. 1. A micro-electrical-mechanical system (MEMS) resonator device comprising:a substrate; anda bulk acoustic wave resonator structure arranged over at least a portion of the substrate, the bulk acoustic wave resonator structure including a piezoelectric material comprising a c-axis having an orientation distribution that is predominantly non-parallel to normal of a face of the substrate, a top side electrode arranged over the piezoelectric material, and a bottom side electrode arranged between the piezoelectric material and the substrate, wherein at least a portion of the piezoelectric material is arranged between the top side electrode and the bottom side electrode to form an active region;wherein the active region is laterally surrounded by an inactive region, and a thickness of piezoelectric material of at least a portion of the inactive region is less than a thickness of piezoelectric material of the active region, such that at least an upper portion of the inactive region along a boundary of the active ...

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Номер записи: 85
17-06-2021 дата публикации

RESONATOR AND RESONANCE DEVICE

Номер: US20210184646A1
Автор: MORI ATSUSHI
Принадлежит:

A resonator is provided that includes a vibration part and a mass addition portion. The vibration part includes a piezoelectric film, an upper electrode, and a lower electrode. The upper electrode and the lower electrode are disposed on opposite sides with the piezoelectric film therebetween. The amount of displacement of the vibration part is greater in a region corresponding to at least part of the mass addition portion than in any other region. The mass addition portion has an inclined surface that slopes in such a manner that the mass addition portion has end regions and a central region thinner than at least one of the end regions when the vibration part is viewed in a plan view. 1. A resonator comprising:a vibrator that includes an upper electrode, a lower electrode, and a piezoelectric film disposed therebetween; anda mass addition member constructed to have an amount of displacement that is greater than in other regions of the vibrator,wherein the mass addition member has an inclined surface that slopes, such that the mass addition member has end regions and a central region that is thinner than at least one of the end regions when the vibrator is viewed in a plan view thereof.2. The resonator according to claim 1 , further comprising:abase; andat least one vibration arm that has a fixed end connected to a front end of the base and an open end disposed away from the front end,wherein the mass addition member is disposed on the open end of the at least one vibration arm.3. The resonator according to claim 2 , wherein the inclined surface of the mass addition member slopes in such a manner that the central region is thinner than the at least one end region in a sectional view taken along a line extending in a direction in which the at least one vibration arm extends.4. The resonator according to claim 3 , wherein the inclined surface is a curved surface with an inclination that increases with increasing distance from the central region towards the at least one ...

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Номер записи: 86
17-06-2021 дата публикации

RESONATOR AND RESONANCE DEVICE

Номер: US20210184651A1
Автор: GOTO Yuichi, INOUE YOSHIHISA, Kawai Ryota
Принадлежит:

A resonator includes a base, at least one vibration arm, a frame, and a holding arm. The vibration arm includes a piezoelectric film, an upper electrode, and a lower electrode. The inequality Fs/Fm<1.9 or the inequality 2.12.1.2. The resonator according to claim 1 , wherein the at least one vibration arm has a fixed end connected to the front end of the base and an open end located away from the front end.3. The resonator according to claim 1 , wherein the resonator is constructed such that Fs/Fm<1.8 or Fs/Fm>2.2.4. The resonator according to claim 1 , wherein the holding arm includes a rear arm connected to a rear end of the base that is opposite the front end of the base and that extends along the rear end claim 1 , and a side arm that is connected to the rear arm and extends along the at least one vibration arm.5. The resonator according to claim 4 ,wherein Lc is a distance between an edge that is farther than any other edge of the rear arm from the side arm and an edge that farther than any other edge of the side arm from the rear arm,{'b': 5', '5', '5', '0', '550, 'wherein L is a length of an imaginary vibration arm having a constant width, with the imaginary vibration arm being obtained by transforming the at least one vibration arm into a form having a moment of inertia that is equal to a ...

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Номер записи: 87
17-06-2021 дата публикации

Manufacturing of c-axis textured sidewall aln films

Номер: US20210184652A1
Автор: Farid S. Alokozai, Roozbeh Tabrizian
Принадлежит: OEM Group LLC, University of Florida Research Foundation Inc

A method for fabricating an acoustic wave resonator includes, in part, forming a micro-fin structure that includes one or more sidewalls on a substrate. The sidewalls are thereafter annealed. A bottom electrode layer is then deposited on top of the micro-fin structure. Afterwards, a layer of aluminum nitride is formed on the bottom electrode layer where the layer of aluminum nitride includes a textured aluminum nitride layer with a c-axis substantially perpendicular to the one or more sidewalls. A top electrode layer is then formed on top of the layer of aluminum nitride. In addition, the top electrode layer can be patterned, and the layer of aluminum nitride can be etched to provide access windows to the bottom electrode layer.

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Номер записи: 88
07-06-2018 дата публикации

ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20180159501A1
Автор: Ishihara Takehito, Ishikawa Kouji, Katsube Akio, ONO Takeshi
Принадлежит:

An electronic component that includes an electronic element; a base member having an upper surface on which the electronic element is mounted; and a lid member bonded to the base member via a bonding member such that the electronic element is hermetically sealed therebetween. The bonding member is made of an insulating material containing a first metal. The lid member has an outermost layer formed on at least a surface of the lid member facing the base member. The outermost layer of the lid member has a solid solution layer of the first metal and a second metal at at least a portion of the outermost layer. 1. An electronic component comprising:a base member having a first surface;an electronic element mounted on the first surface of the base member;a lid member; anda bonding member bonding the lid member to the base member so as to hermetically seal the electronic element between the base member and the lid member,wherein the bonding member is made of an insulating material containing a first metal,wherein the lid member has an outermost layer on at least a surface of the lid member facing the base member, andwherein the outermost layer of the lid member has a solid solution layer of the first metal and a second metal at at least a portion of the outermost layer.2. The electronic component according to claim 1 , wherein the solid solution layer is a solid solution diffused layer formed from the first metal of the bonding member.3. The electronic component according to claim 1 , wherein the solid solution layer is in a region of the outermost layer of the lid member which contacts the bonding member.4. The electronic component according to claim 1 , wherein the electronic element is a piezoelectric vibrator.5. The electronic component according to claim 4 , wherein an inner space defined between the base member and the lid member has a pressure lower than an atmospheric pressure.6. The electronic component according to claim 4 ,wherein an inner space defined between ...

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Номер записи: 89
08-06-2017 дата публикации

MECHANICAL RESONATOR WITH A SPRING-MASS SYSTEM COMPRISING A PHASE-CHANGE MATERIAL

Номер: US20170163239A1
Автор: Engelen Johan B.C., Koelmans Wabe W., Lantz Mark A.
Принадлежит:

A mechanical resonator includes a spring-mass system, wherein the spring-mass system comprises a phase-change material. The mechanical resonator typically comprises an electrical circuit portion, coupled to the phase-change material to alter a phase configuration within the phase-change material. Methods of operation are also disclosed. 1. A method for tuning a resonance frequency of a spring-mass system of a mechanical resonator comprising a spring-mass system , wherein the spring-mass system comprises a phase-change material , the method comprising:altering, by a first mechanism, a reversibly transformable phase configuration of the phase-change material to tune the resonance frequency; andfine-tuning, by a second mechanism distinct from the first mechanism and not affecting the phase configuration, the resonance frequency;wherein the second mechanism includes modifying a force-gradient over the motion range of the spring-mass system.2. A method for tuning a resonance frequency of a spring-mass system of a mechanical resonator comprising a spring-mass system , wherein the spring-mass system comprises a phase-change material , the method comprising:altering, by a first mechanism, a reversibly transformable phase configuration of the phase-change material to tune the resonance frequency; andfine-tuning, by a second mechanism not affecting the phase configuration, the resonance frequency;wherein the second mechanism includes slightly changing the temperature but not the phase of the phase-change material.3. A method for tuning a resonance frequency of a spring-mass system of a mechanical resonator comprising a spring-mass system , wherein the spring-mass system comprises a phase-change material , the method comprising:altering, by a first mechanism, a reversibly transformable phase configuration of the phase-change material to tune the resonance frequency; andfine-tuning, by a second mechanism distinct from the first mechanism and not affecting the phase ...

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Номер записи: 90
08-06-2017 дата публикации

NANO- AND MICRO-ELECTROMECHANICAL RESONATORS

Номер: US20170163240A1
Автор: Hui Yu, Qian Zhenyun, Rinaldi Matteo
Принадлежит:

A resonator including a piezoelectric plate and an interdigital electrode is provided. A ratio between a thickness of the plate and a pitch of the interdigital electrode may be from about 0.5 to about 1.5. A radiation detector including a resonator and an absorber layer capable of absorbing at least one of infrared and terahertz radiation is provided. A resonator including a piezoelectric plate and a two-dimensional electrically conductive material is provided. 1. A radiation detector comprising: a piezoelectric plate, and', 'an interdigital electrode disposed on a first surface of the piezoelectric plate, and, 'a resonator comprisingan absorber layer disposed above a second surface of the piezoelectric plate opposing the first surface, wherein the absorber layer is capable of absorbing at least one of infrared and terahertz radiation.2. The detector of claim 1 , wherein the detector is capable of room temperature operation.3. The detector of claim 1 , wherein a contour-mode of vibration is excited in the piezoelectric plate in response to an alternating current (AC) applied through the electrode .4. The detector of claim 1 , wherein the absorber layer comprises at least one of a single wall carbon nanotube forest claim 1 , silicon nitride claim 1 , graphene claim 1 , and photonic meta-materials.5. The detector of claim 1 , wherein a temperature coefficient of frequency of the resonator is less than about −30 ppm/K.6. The detector of claim 1 , wherein the absorber layer contacts the second surface of the piezoelectric plate.7. The detector of claim 1 , wherein the absorber layer and the second surface of the piezoelectric late are separated by an air gap.8. The detector of claim 1 , further comprising a complementary metal-oxide-semiconductor circuit configured to provide an electronic readout of a resonance frequency of the resonator.9. The detector of claim 1 , wherein the piezoelectric plate comprises at least one of aluminum nitride claim 1 , lithium niobate ...

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Номер записи: 91
24-06-2021 дата публикации

RESONANCE DEVICE

Номер: US20210194454A1
Автор: INOUE YOSHIHISA, Kawai Ryota, UMEDA Keiichi, YATANI Naoto
Принадлежит:

A resonance device is provided for reducing the influence on the resonant frequency of the resonance device of the electric charge borne by an insulating film of a frame. The resonance device includes a resonator including a vibration portion and a frame disposed in at least a part of a vicinity of the vibration portion. The frame includes a holding body and an insulating film, with the holding body holding the vibration portion to vibrate and the insulating film being formed above the holding body. A lower cover is provided having a recess forming at least a part of a space in which the vibration portion vibrates. An inner side surface of the insulating film is disposed at a first distance from an inner surface of a side wall defining the recess. 1. A resonance device comprising:a resonator including a vibration body and a frame disposed around at least a part of the vibration body, the frame including a holding body and an insulating film, with the holding body holding the vibration body, and with the insulating film disposed above the holding body; anda first substrate having a recess forming at least a part of a space in which the vibration body vibrates in operation,wherein an inner side surface of the insulating film is disposed at a first distance from an inner surface of a side wall defining the recess.2. The resonance device according to claim 1 , wherein the holding body is constructed to hold the vibration body to vibrate during operation of the resonance device.3. The resonance device according to claim 1 , wherein the inner side surface of the insulating film is disposed at a second distance equal to or more than the first distance from an inner side surface of the holding body.4. The resonance device according to claim 1 , wherein the first distance is equal to or more than 5 μm and less than or equal to 50 μm.5. The resonance device according to claim 1 , wherein the frame comprises a frame shape when a main surface of the resonator is viewed in a ...

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Номер записи: 92
15-06-2017 дата публикации

MEMS RESONATOR

Номер: US20170170802A1
Автор: Yoo Ilseon
Принадлежит:

A MEMS resonator includes a main substrate forming a receiving part at a center of the main substrate; a mass body having one end part and a center part elastically supported by both sides of the main substrate; a driving unit configured at one side of the receiving part on the main substrate and producing a driving torque by a voltage applied to both sides of the one end part of the mass body to move a position of the mass body with respect to the main substrate; and a tuning part including a pair of tuning units provided symmetrically with respect to the second elastic member, and having a beam member changing a length of the second elastic member by an actuating operation of each tuning unit to control a frequency. 1. A MEMS resonator , comprising:a main substrate forming a receiving part at a center of the main substrate;a mass body positioned at a center of the receiving part on the main substrate and having one end part and a center part elastically supported by both sides of the main substrate through a first elastic member and a second elastic member;a driving unit configured at one side of the receiving part on the main substrate and producing a driving torque by a voltage applied to both sides of the one end part of the mass body to move a position of the mass body with respect to the main substrate; anda tuning part including a pair of tuning units provided symmetrically with respect to the second elastic member, respectively configured at the receiving part by corresponding to both sides of the center part of the mass body, and having a beam member changing a length of the second elastic member by an actuating operation of each tuning unit to control a frequency.2. The MEMS resonator of claim 1 , wherein the tuning unit includes:an auxiliary substrate configured inside the receiving part of the main substrate by corresponding to the center part of the mass body;a first actuator configured in the receiving part between the auxiliary substrate and the main ...

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Номер записи: 93
15-06-2017 дата публикации

NANO- AND MICROELECTROMECHANICAL RESONATORS

Номер: US20170170803A1
Автор: Cassella Cristian, Hui Yu, Qian Zhenyun, Rinaldi Matteo
Принадлежит:

A resonator includes a piezoelectric plate and interdigitated electrode(s). The interdigitated electrode includes a plurality of conductive strips disposed over a top surface of the piezoelectric plate. A two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric plate in response to an alternating voltage applied through the interdigitated electrode. The two-dimensional mode of mechanical vibration is a cross-sectional Lamé mode resonance (CLMR) or a degenerate cross-sectional Lamé mode resonance (dCLMR). 1. A resonator comprising:a piezoelectric layer having a length direction (L), a width direction (W), and a thickness direction (T);a first conductive layer including at least one first electrode disposed over a top surface of the piezoelectric layer, wherein the top surface extends along the length direction and the width direction;a second conductive layer including at least one second electrode disposed over a bottom surface of the piezoelectric layer, wherein the bottom surface extends along the length direction and the width direction;wherein a two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric layer in response to at least one signal provided to the at least one first electrode and/or the at least one second electrode;wherein a two-dimensional mode of mechanical vibration in a cross sectional plane of the piezoelectric layer is sensed through piezoelectrically generated charge collected by the at least one first electrode and/or the at least one second electrode;wherein the cross sectional plane extends along the width direction and the thickness direction;wherein the frequency of the two-dimensional mode of mechanical vibration is dependent on both the width direction and the thickness direction of the resonator structure; andwherein electromechanical coupling of the two-dimensional mode of mechanical vibration is dependent on a numerical ratio of the thickness ...

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Номер записи: 94
15-06-2017 дата публикации

DUAL TRENCH DEEP TRENCH BASED UNRELEASED MEMS RESONATORS

Номер: US20170170805A1
Автор: Wang Wentao, Weinstein Dana
Принадлежит:

A deep trench (DT) MEMS resonator includes a periodic array of unit cells, each of which includes a single DT formed in a semiconductor substrate and filled with a material whose acoustic impedance is different than that of the substrate. The filled DT is used as both an electrical capacitor and a mechanical structure at the same time, making it an elegant design that reduces footprint and fabrication complexity. Adding a second DT to each unit cell in a DT MEMS resonator forms a dual-trench DT (DTDT) MEMS resonator. In a DTDT unit cell, the first DT is filled with a conductor to sense, conduct, and/or generate an acoustic wave. The second DT in the DTDT unit cell is filled with an insulator. The width, filling, etc. of the second DT in the DTDT unit cell can be selected to tune the acoustic passband of the DTDT unit cell. 1. An apparatus comprising: at least one first material, disposed in a first trench defined in the substrate, to sense, conduct, and/or generate an acoustic wave, the at least one first material having an acoustic impedance different than an acoustic impedance of the substrate; and', 'at least one second material, disposed in a second trench defined in the substrate, to reflect and/or conduct at least a portion of the acoustic wave, the at least one second material having an acoustic impedance different than the acoustic impedance of the substrate., 'a substrate defining a plurality of unit cells arranged in a first direction, each unit cell in the plurality of unit cells comprising2. The apparatus of claim 1 , wherein a length of at least one unit cell in the plurality of unit cells is selected based on a desired frequency of the acoustic wave.3. The apparatus of claim 1 , wherein a spacing between a center of the first trench and a center of the second trench in a first unit cell in the plurality of unit cells is about half of a length of the first unit cell.4. The apparatus of claim 1 , wherein the at least one first material in a first unit ...

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Номер записи: 95
30-05-2019 дата публикации

TUNABLE NARROW BANDPASS MEMS TECHNOLOGY FILTER USING AN ARCH BEAM MICRORESONATOR

Номер: US20190165757A1
Автор: AL HAFIZ Md Abdullah, KOSURU Lakshmoji, YOUNIS Mohammad Ibrahim
Принадлежит:

Embodiments of a tunable bandpass microelectromechanical (MEMS) filter are described. In one embodiment, such a filter includes a pair of arch beam microresonators, and a pair of voltage sources electrically coupled to apply a pair of adjustable voltage biases across respective ones of the pair of arch beam microresonators. The pair of voltage sources offer independent tuning of the bandwidth of the filter. Based on the structure and arrangement of the filter, it can be tunable by 125% or more by adjustment of the adjustable voltage bias. The filter also has a relatively low bandwidth distortion, can exhibit less than 2.5 dB passband ripple, and can exhibit sideband rejection in the range of at least 26 dB. 1. A tunable bandpass microelectromechanical (MEMS) filter , comprising:at least one arch beam microresonator;a first voltage source electrically coupled to apply a static voltage bias to the arch beam microresonator; anda second voltage source electrically coupled to apply an adjustable voltage bias across the arch beam microresonator.2. The tunable bandpass MEMS filter according to claim 1 , wherein a bandpass center frequency of the tunable bandpass MEMS filter is tunable by at least 125% by adjustment of the adjustable voltage bias.3. The tunable bandpass MEMS filter according to claim 1 , wherein the tunable bandpass MEMS filter has a relatively low bandwidth distortion.4. The tunable bandpass MEMS filter according to claim 3 , wherein the relatively low bandwidth distortion is about ±50 Hz.5. The tunable bandpass MEMS filter according to claim 1 , wherein the second voltage source offers independent tuning of a passband of the tunable bandpass MEMS filter.6. The tunable bandpass MEMS filter according to claim 1 , wherein a response of the tunable bandpass MEMS filter exhibits less than 2.5 dB passband ripple.7. The tunable bandpass MEMS filter according to claim 1 , wherein a response of the tunable bandpass MEMS filter exhibits sideband rejection in a ...

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Номер записи: 96
21-06-2018 дата публикации

RESONATOR AND RESONATION DEVICE

Номер: US20180175824A1
Автор: Hirota Wakana
Принадлежит:

A resonator includes a vibration portion with a base and a plurality of vibration arms each having a fixed end and a free end with the fixed end being connected to the base. Each of the plurality of vibration arms includes a piezoelectric thin film and an electrode stacked on the piezoelectric thin film. Moreover, a width of each of the plurality of vibration arms increases from the fixed end toward the free end. In addition, a width of the electrode of each of the plurality of vibration arms increases from the fixed end towards the free end of the vibration arm. 1. A resonator comprising:a vibration portion including a base and a plurality of vibration arms each having a fixed end connected to the base and a free end opposite the fixed end,wherein each of the plurality of vibration arms includes a piezoelectric thin film and an electrode stacked on the piezoelectric thin film,wherein each of the plurality of vibration arms has a width that increases as the respective vibration arm extends from the fixed end towards the free end, andwherein the electrode of each of the plurality of vibration arms has a width that increases as the respective electrode extends from the fixed end towards the free end of the vibration arm.2. The resonator according to claim 1 , further comprising:a frame surrounding at least part of the vibration portion; andat least one holding arm that is disposed between the vibration portion and the frame and that connects the base of the vibration portion to the frame.3. The resonator according to claim 2 , wherein the at least one holding arm comprises a pair of holding arms that each extend from a first side of the frame that faces the free ends of the plurality of vibration arms and are connected to a side of the base of the vibration portion that faces a second side of the frame opposite the first side.4. The resonator according to claim 1 , wherein each of the fixed ends of the plurality of vibration arms are connected to a first side of the ...

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Номер записи: 97
21-06-2018 дата публикации

MEMS RESONATOR WITH SUPPRESSED SPURIOUS MODES

Номер: US20180175825A1
Автор: Kaajakari Ville
Принадлежит:

A MEMS resonator is provided with improved electrical characteristics and reduced spurious resonances. The MEMS resonator includes two or more first rectangular resonator plates with lengths greater than their respective widths. Moreover, the MEMS resonator includes two or more second rectangular resonator plates that are positioned parallel to the first resonator plates in the widthwise direction of the MEMS resonator. The length of the second resonator plates is different than the length of the first resonator plates to reduce spurious resonances. 1. A microelectromechanical system (“MEMS”) resonator comprising:{'b': 1', '1', '1', '1, 'a plurality of first resonator plates each having a width W and a length L, wherein the length L>the width W; and'}{'b': 2', '2', '2', '2', '1', '2, 'a plurality of second resonator plates each having a width W and a length L, wherein the length L>the width W, wherein the plurality of first resonator plates and the plurality of second resonator plates are disposed parallel to each other in a widthwise direction of the MEMS resonator, and wherein the length L is not equal to the length L.'}2. The MEMS resonator according to claim 1 , wherein the plurality of second resonator plates comprise at least a pair of second resonator plates that are respectively disposed adjacent to outer sides in the widthwise direction of at least a pair of the plurality of first resonator plates.3. The MEMS resonator according to claim 2 , wherein the pair of first resonator plates are disposed adjacent to each other at respective inner sides in the widthwise direction of the first resonator plates claim 2 , the inners sides being opposite to the outer sides.4. The MEMS resonator according to claim 2 , wherein the MEMS resonator comprises a symmetric shape such that the plurality of second resonator plates are aligned symmetrically relative to the plurality of first resonator plates in the widthwise direction.521. The MEMS resonator according to claim 2 , ...

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Номер записи: 98
06-06-2019 дата публикации

FILTER DEVICE, MULTIPLEXER, RADIO-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION DEVICE

Номер: US20190173448A1
Автор: Kato Masanori, KIDO Syunsuke
Принадлежит:

A filter includes two series arm resonators electrically connected in series between two input/output terminals, a parallel arm resonator electrically connected between a ground and a series arm between the two series arm resonators, an inductor electrically connected in parallel to the two series arm resonators, and a matching circuit electrically connected between one of the two series arm resonators and one of the input/output terminals, wherein the two series arm resonators and the parallel arm resonator define a pass band of a bandpass filter, the two series arm resonators and the inductor define an LC resonant circuit, respective anti-resonant frequencies of each of the two series arm resonators and a resonant frequency of the parallel arm resonator are located in a pass band of the LC resonant circuit, and a resonant frequency of the LC resonant circuit is lower than the resonant frequency of the parallel arm resonator. 1. A filter device comprising:a first series arm resonator and a second series arm resonator electrically connected in series between a first terminal and a second terminal, the first series arm resonator being located on a side closer to the first terminal, the second series arm resonator being located on a side closer to the second terminal;a parallel arm resonator electrically connected between a ground and a series arm between the first series arm resonator and the second series arm resonator; andan inductor electrically connected in parallel to the first series arm resonator and the second series arm resonator.2. A multiplexer comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the filter device according to , the filter device being a first filter device; and'}a second filter device electrically connected to the first terminal; whereina pass band of the first filter device and a pass band of the second filter device are different from one another.3. The multiplexer according to claim 2 , whereinthe first series arm resonator, ...

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Номер записи: 99
06-06-2019 дата публикации

MICROMECHANICAL RESONATOR

Номер: US20190173450A1
Автор: Jaakkola Antti, Pekko Panu
Принадлежит:

The present disclosure describes a micromechanical resonator comprising a resonator element () having a length (l) and a width (w) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2. The resonator element is suspended to a support structure with two or more anchors (). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side () of the resonator element. The first location divides the width (w) of the resonator element into a larger portion (w) and a smaller portion (w) such that a ratio between said smaller portion (w) and the whole width (w) is in a range of 0.10 to 0.28. The second location is at a longer side (). The second location divides the length (l) of the resonator element into a larger portion (l) and a smaller portion (l) such that a ratio between said smaller portion (l) and the whole length (l) is in a range of 0.36 to 0.48. 1. A micromechanical resonator comprising a resonator element having a length and a width that is perpendicular to the length , whereinthe resonator element comprises a first layer structure that comprises a base layer made of a semiconductor material,the length of the resonator element extends along a crystalline direction of the semiconductor material,the resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2.the resonator element is suspended to a support structure with two or more anchors, wherein each of the two or more anchors is attached to:a) a first location at a shorter, widthwise side of the resonator element, wherein the first location divides the width of the resonator element into a larger portion and a smaller portion such that a ratio between said smaller portion and the whole width is in a range of 0.10 to 0.28 orb) a second location at a longer, lengthwise side of the resonator, wherein the second location divides the length of the resonator element into a ...

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Номер записи: 100