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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 23110. Отображено 100.

05-01-2012 дата публикации

Resonator

Номер: US20120001700A1

Автор: Robert J. P. Lander

Принадлежит: NXP BV

A method of manufacturing a MEMS resonator formed from a first material having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and a second material having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient at least within operating conditions of the resonator. The method includes the steps of forming the resonator from the first material; applying the second material to the resonator; and controlling the quantity of the second material applied to the resonator by the geometry of the resonator.

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Номер записи: 1

05-01-2012 дата публикации

Acoustic wave device

Номер: US20120001704A1

Автор: Takashi Miyake

Принадлежит: Murata Manufacturing Co Ltd

An acoustic wave device includes resonator structures each including resonators arranged next to each other, and each of the resonator structures is excited in at least two vibration modes as the resonators thereof are coupled and resonate with each other. At least one of the resonator structures exhibits stronger resonance characteristics in one of the vibration modes than in the other vibration mode or modes within the filter band.

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Номер записи: 2

12-01-2012 дата публикации

Resonator element, resonator, and oscillator

Номер: US20120007685A1

Автор: Akinori Yamada

Принадлежит: Seiko Epson Corp

A resonator element includes: at least one resonating arm extending, wherein the resonating arm has a mechanical resonance frequency which is higher than a thermal relaxation frequency thereof, the resonating arm has a groove portion, the groove portion includes a bottom portion, a first side surface that extends along the longitudinal direction of the resonating arm and comes into contact with the opened principal surface and the bottom portion, and a second side surface that faces the first side surface with the bottom portion disposed therebetween and comes into contact with the opened principal surface and the bottom portion, and the groove portion has a non-electrode region which extends from a part of the first side surface close to the bottom portion to a part of the second side surface close to the bottom portion and in which no electrode is provided.

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Номер записи: 3

23-02-2012 дата публикации

Acoustic wave resonator and duplexer using same

Номер: US20120044027A1

Автор: Hidekazu Nakanishi, Hiroyuki Nakamura, Joji Fujiwara, Rei GOTO, Tetsuya Tsurunari

Принадлежит: Panasonic Corp

An acoustic wave resonator includes a piezoelectric body, an IDT electrode for exciting an acoustic wave with wavelength λ, and a dielectric thin film provided so as to cover the IDT electrode. The IDT electrode includes a bus bar electrode region, a dummy electrode region, and an IDT cross region in order from outside. The film thickness of the dielectric thin film above at least one of the bus bar electrode region and the dummy electrode region is smaller than that above the IDT cross region by 0.1λ to 0.25λ. This configuration provides an acoustic wave resonator that reduces transverse-mode spurious emission.

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Номер записи: 4

01-03-2012 дата публикации

Manufacturing method for boundary acoustic wave device and boundary acoustic wave device

Номер: US20120049691A1

Автор: Hajime Kando, Mari SAJI

Принадлежит: Murata Manufacturing Co Ltd

A manufacturing method for a boundary acoustic wave device is capable of certainly providing the boundary acoustic wave device with desired target frequency characteristics. The manufacturing method for the boundary acoustic wave device includes a process for preparing a laminated body that includes a first medium, a second medium laminated on the first medium, and an IDT electrode that is disposed at an interface between the first and second media, and a process for implanting ions from an outer portion of the second medium and adjusting a frequency.

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Номер записи: 5

01-03-2012 дата публикации

Electromechanical systems piezoelectric contour mode differential resonators and filters

Номер: US20120050236A1

Автор: Changhan Yun, Chengjie Zuo, Chi Shun Lo, Jonghae Kim, Sang-June Park, Sanghoon Joo

Принадлежит: Qualcomm Mems Technologies Inc

This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a contour mode resonator device includes a first conductive layer with a plurality of first layer electrodes including a first electrode at which a first input signal can be provided and a second electrode at which a first output signal can be provided. A second conductive layer includes a plurality of second layer electrodes including a first electrode proximate the first electrode of the first conductive layer and a second electrode proximate the second electrode of the first conductive layer. A second signal can be provided at the first electrode or the second electrode of the second conductive layer to cooperate with the first input signal or the first output signal to define a differential signal. A piezoelectric layer is disposed between the first conductive layer and the second conductive layer. The piezoelectric layer includes a piezoelectric material. The piezoelectric layer is substantially oriented in a plane and capable of movement in the plane responsive to an electric field between the first electrodes or the second electrodes.

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Номер записи: 6

15-03-2012 дата публикации

Microelectromechanical filter

Номер: US20120062340A1

Автор: Chin-Hung Wang, Feng-Chia Hsu, Pin Chang, Tsun-Che Huang

Принадлежит: Industrial Technology Research Institute ITRI

A microelectromechanical filter is provided. The microelectromechanical filter includes an input electrode, an output electrode, one or several piezoelectric resonators, one or several high quality factor resonators, and one or several coupling beams. The input electrode and the output electrode are disposed on the piezoelectric resonators. The high quality factor resonator is silicon or of piezoelectric materials, and there is no metal electrode on top of the resonator. The coupling beam is connected between the piezoelectric resonator and the high quality factor resonator. The coupling beam transmits an acoustic wave among the resonators, and controls a bandwidth of filter. The microelectromechanical filter with low impedance and high quality factor fits the demand for next-generation communication systems.

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Номер записи: 7

22-03-2012 дата публикации

Elastic wave apparatus and duplexer

Номер: US20120068788A1

Автор: Ayaka Yamamoto, Yuichi Takamine

Принадлежит: Murata Manufacturing Co Ltd

An elastic wave apparatus includes a balanced-unbalanced transforming function, and an elastic wave filter and a multilayer wiring board on which the elastic wave filter is mounted. The elastic wave filter includes an unbalanced terminal and first and second balanced terminals. External electrodes used are provided on the multilayer wiring board. A first internal line connects the first balanced terminal and the external electrode. A second internal line connects the second balanced terminal and the external electrode. The lengths or shapes of the first internal line and the second internal line are set so that a capacitance used for the improvement of a balance is generated in an adjacent area A where the first internal line and the second internal line are adjacent to each other. In the adjacent area A, the directions of currents passing through the first internal line and the second internal line are the same.

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Номер записи: 8

05-04-2012 дата публикации

Method of piezoelectric vibrating piece, wafer, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece

Номер: US20120079690A1

Автор: Daishi Arimatsu

Принадлежит: Seiko Instruments Inc

The present invention provides a novel method of producing piezoelectric vibration pieces in which a plurality of piezoelectric vibration pieces are formed at once from a wafer, using a plurality of photoresist processes. The wafer is marked with wafer marks each unique to a different one of photoresist masks to prevent a wrong use of the photoresist masks during the photoresist processes.

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Номер записи: 9

12-04-2012 дата публикации

Bulk acoustic wave resonator and bulk acoustic wave filter and method of fabricating bulk acoustic wave resonator

Номер: US20120086522A1

Автор: Shau-Gang Mao, Wei-Kung Deng

Принадлежит: Richwave Technology Corp

A bulk acoustic wave (BAW) resonator includes a substrate, and two electrodes stacked on the substrate, and at least one piezoelectric layer interposed between the two electrodes. The two electrodes and the piezoelectric layer are at least partially overlapped with each other in a vertical projection direction, and one of the two electrodes has a plurality of openings.

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Номер записи: 10

26-04-2012 дата публикации

Method for mounting a piezoelectric resonator in a case and packaged piezoelectric resonator

Номер: US20120098389A1

Автор: Guenter Sallaz, Silvio Dalla Piazza, Stephane Borloz, Thomas Luethi

Принадлежит: Micro Crystal AG

The invention concerns a method for mounting a piezoelectric resonator ( 40 ) inside a case ( 80 ) by ultrasonic bonding of the piezoelectric resonator to a base part of the case. The invention also concerns a small-sized packaged piezoelectric resonator, in which the piezoelectric resonator is ultrasonically bonded inside a base part of the package.

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Номер записи: 11

26-04-2012 дата публикации

Surface Acoustic Wave Filter and Duplexer Using Same

Номер: US20120098618A1

Автор: Hiroyuki Tanaka

Принадлежит: Kyocera Corp

An SAW filter and a duplexer excellent in electrical characteristics will be provided. An SAW filter has a piezoelectric substrate 40 , a surface acoustic wave element 10 having a first IDT electrode 1 on the piezoelectric substrate 40 , a first signal line 31 electrically connected to the first IDT electrode 1 , and a ring-shaped reference potential line 9 which has a first intersecting portion intersecting with the first signal line 31 through an insulation member 41 and surrounds the surface acoustic wave element 10.

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Номер записи: 12

03-05-2012 дата публикации

Mounting structure of electronic component and method of manufacturing electronic component

Номер: US20120106107A1

Автор: Yukihiro Hashi

Принадлежит: Seiko Epson Corp

A mounting structure includes: an electronic component including: a functional element having a predetermined function; a first resin protrusion section having a surface covered by a covering film including a conductive section electrically connected to the functional element; and a second resin protrusion section that is disposed inside an area surrounded by the first resin protrusion section, and has adhesiveness at least on a surface of the second resin protrusion section, and a base member having a connection electrode and adapted to mount the electronic component. In the structure, the second resin protrusion section mounts the electronic component on the base member in a condition in which the conductive section of the covering film has conductive contact with the connection electrode due to elastic deformation of the first resin protrusion section.

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Номер записи: 13

31-05-2012 дата публикации

Boundary acoustic wave device

Номер: US20120133246A1

Автор: Mari YAOI, Tetsuya Kimura

Принадлежит: Murata Manufacturing Co Ltd

Regarding a boundary acoustic wave device in which at least a part of an IDT electrode is embedded in a groove disposed in a piezoelectric substrate, the acoustic velocity is increased. A boundary acoustic wave device is provided with a piezoelectric substrate, a first dielectric layer, and an IDT electrode. The surface of the piezoelectric substrate is provided with a groove. The IDT electrode is disposed at the boundary between the piezoelectric substrate and the first dielectric layer in such a way that at least a part thereof is located in the groove. In the inside of the groove, the groove angle γ, which is the size of an angle formed by an upper end portion of the inside surface of the groove with the surface of the piezoelectric substrate, is less than 90 degrees.

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Номер записи: 14

07-06-2012 дата публикации

Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus

Номер: US20120139653A1

Автор: Keigo Iizawa, Kenichi Hano, Kunihito Yamanaka, Takuya Owaki

Принадлежит: Seiko Epson Corp

A surface acoustic wave resonator which can realize favorable frequency-temperature characteristics and suppress frequency variations is provided. The surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|Ψ|≦49.57°), and an IDT that is provided on the quartz crystal substrate, includes a plurality of electrode fingers, and excites a stop band upper end mode surface acoustic wave, wherein inter-electrode finger grooves are provided between the electrode fingers in a plan view, and wherein if a line occupation rate of convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ηg, and a line occupation rate of the electrode fingers disposed on the convex portions is ηe, η g >η e and 0.59<η eff <0.73 are satisfied in a case where an effective line occupation rate ηeff of the IDT is an arithmetic mean of the line occupation rate ηg and the line occupation rate ηe.

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Номер записи: 15

14-06-2012 дата публикации

Acoustic wave element and acoustic wave element sensor

Номер: US20120146457A1

Автор: Hidekazu Nakanishi, Hiroyuki Nakamura, Rei GOTO

Принадлежит: Panasonic Corp

An acoustic wave element includes a piezoelectric body, an input IDT electrode, an output IDT electrode, a propagation path provided between the input IDT electrode and the output IDT electrode, a first dielectric layer provided on the piezoelectric body so as to cover the input IDT electrode and the output IDT electrode, and a reactive portion provided on the propagation path and reacting to a substance to be detected or a binding substance that binds with the substance to be detected. The main acoustic wave becomes, in the input IDT electrode and the output IDT electrode, a boundary acoustic wave that propagates between the piezoelectric body and the first dielectric layer, and becomes, in the propagation path, a surface acoustic wave that propagates on an upper surface of the propagation path. With this structure, deterioration of the element characteristic is suppressed.

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Номер записи: 16

21-06-2012 дата публикации

Crystal oscillator and method for manufacturing the same

Номер: US20120154068A1

Автор: Chao-Ta Huang, Lung-Tai Chen, Tzung-Ching Lee, Yu-Wen Hsu

Принадлежит: Industrial Technology Research Institute ITRI

A crystal oscillator includes a cover, a crystal blank and an Integrated Circuit (IC) chip. The cover has a surface, a cavity formed in the surface, a plurality of conductive contacts and a conductive sealing ring. The conductive contacts are disposed on the surface, and the conductive sealing ring is disposed on the surface and surrounds the conductive contacts. The IC chip is connected to the conductive contacts and the conductive sealing ring, and forms a hermetic chamber with the cover and the conductive sealing ring. The crystal blank is located in the hermetic chamber, and is electrically connected to the IC chip. Furthermore, a method for manufacturing a crystal oscillator is also provided.

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Номер записи: 17

21-06-2012 дата публикации

Resonator device including electrode with buried temperature compensating layer

Номер: US20120154074A1

Автор: Donald Lee, Qiang Zou, Richard C. Ruby, Wei Pang

Принадлежит: Avago Technologies Wireless IP Singapore Pte Ltd

An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

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Номер записи: 18

28-06-2012 дата публикации

Piezoelectric ceramic, method for producing same, and piezoelectric device

Номер: US20120161588A1

Автор: Keiichi Hatano, Yutaka Doshida

Принадлежит: TAIYO YUDEN CO LTD

Disclosed is a piezoelectric ceramic which is characterized by containing [K 1-x Na x ] 1-y Li y [Nb 1-z-w Ta z Sb w ]O 3 (wherein x, y, z and w each represents a molar ratio and satisfies 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦w≦1) as the main phase and K 3 Nb 3 O 6 Si 2 O 7 as a sub-phase, while containing, as an additive, a Cu compound in an amount of 0.02-5.0 mol in terms of CuO relative to 100 mol of the main phase.

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Номер записи: 19

12-07-2012 дата публикации

Method of fabricating piezoelectric materials with opposite c-axis orientations

Номер: US20120177816A1

Автор: John D. Larson, III, Jyrki Kaitila, Stefan Bader

Принадлежит: Avago Technologies Wireless IP Singapore Pte Ltd

In accordance with a representative embodiment, a method, comprises: providing a substrate; forming a first piezoelectric layer having a compression-negative (C N ) polarity over the substrate; and forming a second piezoelectric layer having a compression-positive (C P ) over the substrate and adjacent to the first piezoelectric layer.

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Номер записи: 20

16-08-2012 дата публикации

Anodic bonding apparatus, method of manufacturing package, piezoelectric vibrator, oscillator, electronic apparatus, and radio timepiece

Номер: US20120206998A1

Автор: Kazuyoshi Sugama, Masashi Numata

Принадлежит: Seiko Instruments Inc

An anodic bonding apparatus includes a first intermediate member that is disposed between an upper surface (an outer surface) of a lead substrate wafer and a first heater, has heat conductivity, and can be flexible; and a second intermediate member that is disposed between a lower surface (an outer surface) of a base substrate wafer and a second heater, has conductivity and heat conductivity, and can be flexible, wherein the first intermediate member is formed so that a central portion thereof bulges toward the base substrate wafer further than a periphery portion thereof, and the second intermediate member is formed so that a central portion thereof bulges toward the lead substrate wafer further than a periphery portion thereof, and, the first intermediate member and the second intermediate member are evenly deformed.

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Номер записи: 21

30-08-2012 дата публикации

Spin chuck and apparatus having spin chuck for manufacturing piezoelectric resonator piece

Номер: US20120216745A1

Автор: Hirokazu Mizonobe

Принадлежит: Seiko Instruments Inc

A spin chuck rotating a substrate utilizing a centrifugal force while holding one surface of the substrate with a substrate holding section to apply a film material to another surface of the substrate. The substrate holding section includes a tapered peripheral part having a peripheral edge where a substrate holding surface and a back surface thereof are connected. The other surface of the substrate and the back surface of the substrate holding section smoothly continue with each other with the holding surface of the substrate holding section kept in contact with the other surface of the substrate.

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Номер записи: 22

30-08-2012 дата публикации

Crystal Device

Номер: US20120217846A1

Автор: Takehiro Takahashi

Принадлежит: Nihon Dempa Kogyo Co Ltd

A surface-mount type crystal device is provided, having a rectangular crystal element including an excitation part and a frame surrounding the excitation part, wherein the frame has sides respectively along a first and a second directions intersected with each other; a rectangular base, bonded to a principal plane of the frame, having sides respectively along the first and the second directions; a rectangular lid, bonded to another principal plane of the frame, having sides respectively along the first and the second directions. A first and a second bonding materials, respectively corresponding to a thermal expansion coefficient in the first and the second directions of the crystal element, are respectively applied on the sides of the first and the second directions of each of the frame of a crystal material, the base and the lid. A second bonding material is different from the first bonding material.

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Номер записи: 23

30-08-2012 дата публикации

Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator

Номер: US20120218059A1

Автор: Alexandre Shirakawa, Dariusz Burak, Phil Nikkel, Stefan Bader

Принадлежит: Avago Technologies Wireless IP Singapore Pte Ltd

In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

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Номер записи: 24

30-08-2012 дата публикации

Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer

Номер: US20120218060A1

Автор: Alexandre Shirakawa, Dariusz Burak, John D. Larson, III, Jyrki Kaitila, Phil Nikkel

Принадлежит: Avago Technologies Wireless IP Singapore Pte Ltd

A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

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Номер записи: 25

27-09-2012 дата публикации

Acoustic semiconductor device

Номер: US20120241877A1

Автор: Atsuko Iida, Kazuhide Abe, Kazuhiko Itaya, Tadahiro Sasaki, Takashi Kawakubo

Принадлежит: Toshiba Corp

According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

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Номер записи: 26

04-10-2012 дата публикации

Piezoelectric device and manufacturing method of piezoelectric device

Номер: US20120248940A1

Автор: Kunio Morita, Takumi ARIJI

Принадлежит: Nihon Dempa Kogyo Co Ltd

A piezoelectric device, in which one of a first plate, a second plate, and an adhesive agent is colored for confirming a bonding status of the adhesive agent, and a manufacturing method thereof, are provided. A piezoelectric device includes a piezoelectric vibrating piece that vibrates by applying a voltage; a first plate and a second plate formed of glass and seal the piezoelectric vibrating piece; and an adhesive agent which bonds the first plate with the second plate, wherein one of the first plate, the second plate, and the adhesive agent is colored.

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Номер записи: 27

18-10-2012 дата публикации

Sealed surface acoustic wave element package

Номер: US20120261815A1

Автор: Haruki Ito, Nobuaki Hashimoto

Принадлежит: Seiko Epson Corp

An electronic component includes: a semiconductor substrate having a first surface and a second surface opposing to the first surface; a trans-substrate conductive plug that penetrates the semiconductor substrate from the first surface to the second surface; an electronic element provided in the vicinity of the first surface of the semiconductor; and a sealing member that seals the electronic element between the sealing member and the first surface, wherein the electronic element is electrically connected to the trans-substrate conductive plug.

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Номер записи: 28

18-10-2012 дата публикации

Resonator and method of controlling the same

Номер: US20120262242A1

Автор: Casper Van Der Avoort, Jozef Thomas Martinus Van Beek

Принадлежит: NXP BV

A resonator in which in addition to the normal anchor at a nodal point, a second anchor arrangement is provided and an associated connecting arm between the resonator body and the second anchor arrangement. The connecting arm connects to the resonator body at a non-nodal point so that it is not connected to a normal position where fixed connections are made. The connecting arm is used to suppress transverse modes of vibration.

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Номер записи: 29

18-10-2012 дата публикации

Resonator device

Номер: US20120262253A1

Автор: Bruce A. Igawa, Bryce Smith, Paul G. Rosadiuk, Walid M. Al-Bondak

Принадлежит: Boeing Co

A coaxial resonator device includes a substrate including a chip-and-wire circuit. A resonator is coupled to the substrate using a conductive epoxy. A system includes a resonator device. The resonator device includes a housing having one or more connectors, a resonator coupled to the housing a conductive epoxy, and a chip-and-wire circuit connecting the resonator to the one or more connectors.

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Номер записи: 30

25-10-2012 дата публикации

Flexural vibration piece and oscillator using the same

Номер: US20120267985A1

Автор: Makoto Furuhata, Takashi Yamazaki, Yuji HAMAYAMA

Принадлежит: Seiko Epson Corp

A flexural vibration piece includes a flexural vibrator that has a first region on which a compressive stress or a tensile stress acts due to vibration and a second region having a relationship in which a tensile stress acts thereon when a compressive stress acts on the first region and a compressive stress acts thereon when a tensile stress acts on the first region, and performs flexural vibration in a first plane. The flexural vibration piece also includes a heat conduction path, in the vicinity of the first region and the second region, that is formed of a material having a thermal conductivity higher than that of the flexural vibrator and thermally connects between the first region and the second region.

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Номер записи: 31

08-11-2012 дата публикации

Acoustic wave device

Номер: US20120279795A1

Автор: Mitsuhiro Furukawa, Shinji Harada, Tetsuhiro Korechika

Принадлежит: Panasonic Corp

An acoustic wave device includes a piezoelectric substrate, a first wiring disposed on an upper surface of the piezoelectric substrate, an organic insulator covering at least a portion of the first wiring, a second wiring disposed on a first portion of the upper surface of the organic insulator, and an inorganic insulator covering at least a second portion of an upper surface of the organic insulator. The second portion of the upper surface of the organic insulator faces an oscillation space across the inorganic insulator. The acoustic wave device has preferable high-frequency characteristics and high long-term reliability.

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Номер записи: 32

08-11-2012 дата публикации

Microelectromechanical systems (mems) resonators and related apparatus and methods

Номер: US20120280594A1

Автор: David M. Chen, Guiti Zolfagharkhani, Jan H. Kuypers, Jason Goodelle, Klaus Juergen Schoepf, Pritiraj Mohanty, Reimund Rebel

Принадлежит: Sand 9 Inc

Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

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Номер записи: 33

08-11-2012 дата публикации

Piezoelectric vibrating pieces and piezoelectric devices comprising same, and methods for manufacturing same

Номер: US20120280598A1

Автор: Shuichi Mizusawa

Принадлежит: Nihon Dempa Kogyo Co Ltd

Exemplary piezoelectric vibrating pieces have an excitation electrode and an extraction electrode having uniform thickness in the vibrating region to prevent unnecessary vibrations and degradation of vibration characteristics. An exemplary piezoelectric vibrating piece includes a vibrating portion having an excitation electrode of a first thickness (d 1 ), an outer frame surrounding the vibrating portion with a gap therebetween, a joining portion connecting the vibrating portion and the outer frame, and an extraction electrode connected to the excitation electrode and extending on the vibrating portion, joining portion, and outer frame. The extraction electrode has the first thickness d 1 throughout the vibrating portion and a second thickness (d 2 >d 1 ) on the outer frame.

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Номер записи: 34

15-11-2012 дата публикации

Communications filter package for narrowband and wideband signal waveforms

Номер: US20120286894A1

Автор: Michael S. Vogas

Принадлежит: BAE Systems Information and Electronic Systems Integration Inc

A filter package for communications equipment includes two or more filters in die form, each having a different frequency response. A first switch and a second switch are operatively connected to the filters and are configured to select a desired filter for operation in a signal stage of the equipment. The filters are aligned and stacked one over the other in the form of a package having an input terminal that is tied to a common terminal of the first switch, and an output terminal tied to a common terminal of the second switch. When the input and the output terminals of the filter package are connected to corresponding terminals of an intermediate frequency (IF) stage in a communications transceiver, the package can support both narrowband and wideband waveforms defined by the Joint Tactical Radio System (JTRS).

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Номер записи: 35

29-11-2012 дата публикации

Electronic component and production method thereof

Номер: US20120299665A1

Автор: Kazuhiro Matsumoto, Kazunori Inoue, Tsuyoshi Yokoyama

Принадлежит: TAIYO YUDEN CO LTD

A production method of an electronic component includes: forming a sheet having a resin layer and a metal layer formed under the resin layer; bonding the sheet to a substrate so that the metal layer is arranged on a functional portion of an acoustic wave element formed on the substrate, a frame portion surrounding the functional portion is formed between the metal layer and the substrate, a cavity is formed on the functional portion by the metal layer and the frame portion, and the resin layer covers the metal layer and the frame portion.

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Номер записи: 36

20-12-2012 дата публикации

Acoustic wave device

Номер: US20120319802A1

Автор: Hiroaki Ochiai, Junya Nishii, Tsuyoshi Nakai

Принадлежит: Kyocera Corp

A SAW device ( 1 ) comprises a substrate ( 3 ); SAW elements ( 10 ) on a first main surface ( 3 a ) of the substrate ( 3 ); first lines (intermediate lines ( 29 ) and output side lines ( 31 )) that are disposed upon the first main face ( 3 a ) and connected to the SAW elements ( 10 ); an insulator ( 21 ) that is layered upon the first lines; second lines (a second ground line ( 33 b ) and a third ground line ( 33 c )) that are layered upon the insulator ( 21 ) and configure three-dimensional wiring parts ( 39 ) with the first lines; and a cover ( 5 ) that seals the SAW elements ( 10 ) and the three-dimensional wiring parts ( 39 ). Wiring spaces ( 53 ), formed between the first main face ( 3 a ) and the cover ( 5 ), houses the three-dimensional wiring parts ( 39 ), without housing the SAW elements ( 10 ).

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Номер записи: 37

03-01-2013 дата публикации

Piezoelectric vibrating device and method for manufacturing same

Номер: US20130002096A1

Автор: Mitoshi Umeki, Ryoichi Ichikawa

Принадлежит: Nihon Dempa Kogyo Co Ltd

A piezoelectric device includes a piezoelectric vibrating plate, a first plate, a first glass sealing material disposed in a ring shape, and an electrically conductive adhesive. The piezoelectric vibrating plate includes a piezoelectric vibrating piece, a frame body, and a pair of extraction electrodes. The piezoelectric vibrating piece includes a pair of excitation electrodes. The frame body surrounds the piezoelectric vibrating piece. The frame body is formed integrally with the piezoelectric vibrating piece. The first glass sealing material encloses a periphery of the first main surface of the frame body so as to bond the first plate and the first main surface of the frame body together.

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Номер записи: 38

24-01-2013 дата публикации

Piezoelectric vibrating piece, piezoelectric device, and method for manufacturing piezoelectric device

Номер: US20130020912A1

Автор: Shuichi Mizusawa, Takehiro Takahashi

Принадлежит: Nihon Dempa Kogyo Co Ltd

A piezoelectric vibrating piece is to be bonded to and sandwiched between a lid plate and a base plate with an external electrode. The piezoelectric vibrating piece has a first main surface at the lid plate side and a second main surface at the base plate side. The piezoelectric vibrating piece includes an excitation unit, a first excitation electrode, a second excitation electrode, a framing portion, one connecting portion, a first extraction electrode, and a second extraction electrode. The connecting portion includes a planar surface parallel to both the main surfaces and a side face intersecting with the planar surface. The first extraction electrode is extracted via the connecting portion. The second extraction electrode is extracted via the connecting portion. The first extraction electrode is disposed on at least a part of the side face of the connecting portion to be extracted to the framing portion.

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Номер записи: 39

24-01-2013 дата публикации

Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit

Номер: US20130021110A1

Автор: Kunihito Yamanaka

Принадлежит: Seiko Epson Corp

It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT.

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Номер записи: 40

31-01-2013 дата публикации

Saw device, saw oscillator, and electronic apparatus

Номер: US20130027144A1

Автор: Kunihito Yamanaka, Naohisa Obata

Принадлежит: Seiko Epson Corp

A SAW device includes a SAW chip formed of a piezoelectric substrate and an IDT formed thereon, a base substrate that supports the SAW chip, and a fixing member that fixes the SAW chip to the base substrate. The SAW chip that forms a cantilever is supported by the base substrate via the fixing member in a position where the IDT does not overlap with the fixing member in a plan view of the SAW chip. The length W of the SAW chip in a y-axis direction and the length D of the fixing member in the y-axis direction satisfy 1<D/W1≦1.6. The fixing member bonds the lower surface and side surfaces of the fixed end of the SAW chip to the base substrate.

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Номер записи: 41

07-03-2013 дата публикации

Elastic wave device

Номер: US20130057113A1

Автор: Takashi Miyake

Принадлежит: Murata Manufacturing Co Ltd

In an elastic wave device that significantly reduces and prevents deterioration of a frequency characteristic without roughening an undersurface of a piezoelectric substrate, a structure is bonded to a surface of a piezoelectric substrate other than a main surface of the piezoelectric substrate on which IDTs are located. The structure is provided so that a path difference is defined between a first component and a second component of a bulk wave that is excited by the IDT and propagates in the piezoelectric substrate toward the bonding surface. The first component of the bulk wave is reflected from the bonding surface. The second component of the bulk wave enters the structure from the bonding surface, propagates in the structure, enters the piezoelectric substrate from the bonding surface, and propagates in the same direction as that of the first component reflected from the bonding surface in the piezoelectric substrate.

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Номер записи: 42

07-03-2013 дата публикации

Piezoelectric vibration device and oscillator

Номер: US20130057355A1

Автор: Yoshifumi Yoshida

Принадлежит: Seiko Instruments Inc

A piezoelectric vibration device is provided that can reduce the stress and strain that transmit through a base substrate. The piezoelectric vibration device includes a piezoelectric vibrating reed that oscillates in an AT mode, and that includes excitation electrodes respectively formed on the front and back surfaces of the reed. One of the excitation electrodes is connected to the base substrate via a metal bump on a center line passing across the shorter sides of the piezoelectric vibrating reed and in the vicinity of one of the shorter sides of the piezoelectric vibrating reed. The other excitation electrode is connected to the base substrate via a metal bump on the same side as the above shorter side, and in the vicinity of a portion where the shorter side of the piezoelectric vibrating reed crosses one of the longer sides of the piezoelectric vibrating reed.

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Номер записи: 43

07-03-2013 дата публикации

Surface acoustic wave device and production method therefor

Номер: US20130057361A1

Автор: Kiwamu Sakano, Shu Yamada

Принадлежит: Murata Manufacturing Co Ltd

A surface acoustic wave device includes a surface acoustic wave element including a plurality of electrode pads, and a mount substrate. The surface acoustic wave element is flip-chip mounted on a die-attach surface of the mount substrate by bumps made of Au. The mount substrate includes at least one resin layer including via-holes, a plurality of mount electrodes provided on the die-attach surface of the mount substrate, and via-hole conductors. The mount electrodes are bonded to the electrode pads via the bumps. The via-hole conductors are provided in the via-holes. At least one of each of the electrode pads and each of the mount electrodes includes a front layer made of Au. At least one of the via-hole conductors is located below the corresponding bump.

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Номер записи: 44

02-05-2013 дата публикации

Acoustic wave device

Номер: US20130106530A1

Автор: Hitoshi Tsukidate, Motoyuki Tajima, Tooru Takezaki

Принадлежит: TAIYO YUDEN CO LTD

An acoustic wave device includes: a multilayer structure that has plural surfaces which principal surfaces of plural layers provide; a chip including an acoustic wave filter and mounted on a first surface; a resin unit sealing the chip; a wiring pattern that is formed on a second surface and electrically connected to at least one of resonators; a ground pattern that is formed on the second surface along a part of the wiring pattern, and is away from the wiring pattern; and an external terminal that is formed on a third surface and electrically connected to the wiring pattern and the ground pattern, the third surface being disposed on an opposite side of the first surface with respect to the second surface; wherein a part of the wiring pattern that comes closest to the ground pattern is substantially formed in parallel with the ground pattern.

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Номер записи: 45

02-05-2013 дата публикации

SELF-POLARIZED CAPACITIVE MICROMECHANICAL RESONATOR APPARATUS AND FABRICATION METHOD

Номер: US20130106533A1

Автор: Ayazi Farrokh, Samarao Ashwin

Принадлежит:

The present invention is directed towards a self-polarized capacitive micromechanical resonator apparatus and fabrication method. The apparatus includes a body member capable of retaining a polarization charge in the absence of a polarization voltage source. By creating potential wells or charge traps on the surface of the resonant body member through a nitrogen diffusing process, charges may be trapped in the charge traps. Unless perturbed externally, the charges remain trapped thus enabling a self-polarization technique without the need for any externally applied polarization voltage. 1. A self polarized capacitive micro-mechanical resonator apparatus comprising a resonant body member capable of retaining a polarization charge in the absence of an active polarization voltage source.2. A self polarized capacitive micro-mechanical resonator comprising a resonant body member formed from a non-piezoelectric material.3. A capacitive micro-mechanical resonator apparatus comprising a resonant body member capable of passively retaining a polarization charge.4. The apparatus of capable of retaining a polarization charge without an active polarization voltage source.5. The apparatus of comprising a resonant body member formed from a non-piezoelectric material.6. The apparatus of comprising a resonant body member formed from a silicon material.7. The apparatus of wherein the silicon material is a single-crystal silicon material.8. The apparatus of wherein the capacitive micro-mechanical resonator apparatus comprises a bulk acoustic resonator.9. The apparatus of wherein the resonant body member further comprises a surface area characterized by a plurality of charge traps disposed thereon.10. The apparatus of wherein the plurality of charge traps comprise a plurality of wells extending inwardly from the surface of the resonant body member.11. A self polarized capacitive micro-mechanical resonator apparatus comprising:a resonant body member; andat least one electrode adjacent a ...

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Номер записи: 46

16-05-2013 дата публикации

Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure

Номер: US20130119491A1

Автор: Anthony K. Stamper, Stephen E. Luce

Принадлежит: International Business Machines Corp

Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming a via through the insulator material and exposing a material underlying the amorphous silicon beam. The method further includes providing a sacrificial material in the via and over the amorphous silicon beam. The method further includes providing a lid on the sacrificial material and over the insulator material. The method further includes venting, through the lid, the sacrificial material and the underlying material to form an upper cavity above the amorphous silicon beam and a lower cavity below the amorphous silicon beam, respectively.

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Номер записи: 47

30-05-2013 дата публикации

Method of manufacturing boundary acoustic wave device

Номер: US20130133179A1

Автор: Hajime Kando

Принадлежит: Murata Manufacturing Co Ltd

A method of manufacturing a boundary acoustic wave device includes the steps of forming an electrode on a first medium layer, forming a second medium layer so as to cover the electrode on the first medium layer, and forming a sound absorbing layer on an external surface of the second medium layer. The sound absorbing layer has an acoustic velocity of transverse waves that is lower than an acoustic velocity of transverse waves of the second medium layer.

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Номер записи: 48

06-06-2013 дата публикации

Elastic wave apparatus

Номер: US20130141189A1

Автор: Kazunori Nishimura, Satoru Ikeuchi

Принадлежит: Panasonic Corp

An elastic wave device includes a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, a second balanced terminal, a first filter part, and a second filter part. A phase of an electric signal transmitted from first unbalanced terminal to the first balanced terminal in the first filter part is different from a phase of an electric signal transmitted from the second unbalanced terminal to the first balanced terminal in the second filter part. A phase of an electric signal transmitted from the first unbalanced terminal to the second balanced terminal in the first filter part is different from a phase of an electric signal transmitted from the second unbalanced terminal to the second balanced terminal in the second filter part.

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Номер записи: 49

13-06-2013 дата публикации

Inter-digital bulk acoustic resonator

Номер: US20130147568A1

Автор: Chin-Hung Wang, Feng-Chia Hsu, Pin Chang, Tsun-Che Huang

Принадлежит: Industrial Technology Research Institute ITRI

An inter-digital bulk acoustic resonator including a resonating structure, one or more input electrodes, one or more output electrodes, a substrate, and a supporting structure disposed on the substrate is provided. The resonating structure includes one or more resonating beams and a coupling beam. The resonating beams are connected at opposite two sides of the coupling beam respectively. The input electrodes and the output electrodes are arranged among the resonating beams in interlace. The input electrodes, the output electrodes, and the resonating beams are parallel to each other. Two ends of the coupling beam are connected to the supporting structure, such that the resonating structure is supported on the substrate.

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Номер записи: 50

20-06-2013 дата публикации

Elastic wave branching filter

Номер: US20130154763A1

Автор: Yuichi Takamine

Принадлежит: Murata Manufacturing Co Ltd

An elastic wave surface acoustic wave duplexer includes an antenna terminal, a transmission filter, a reception filter, and a plurality of elastic wave resonators connected in series between the antenna terminal and the reception filter. The reception filter is a longitudinally coupled resonator-type surface acoustic wave filter including a plurality of IDT electrodes and arranged along a propagation direction of elastic wave. A combined capacitance of the plurality of surface acoustic wave resonators is smaller than a capacitance of the IDT electrodes and included in the plurality of IDT electrodes and connected to the antenna terminal.

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Номер записи: 51

27-06-2013 дата публикации

Circuit substrate

Номер: US20130163212A1

Автор: Gohki NISHIMURA, Naoyuki Tasaka, Sachiko Tanaka

Принадлежит: TAIYO YUDEN CO LTD

A circuit substrate includes: a laminate substrate in which a conductive layer and an insulating layer are laminated; a filter chip that has an acoustic wave filter and is provided inside of the laminate substrate; and an active component that is provided on a surface of the laminate substrate and is connected with the filter chip, at least a part of the active component overlapping with a projected region that is a region of the filter chip projected in a thickness direction of the laminate substrate.

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Номер записи: 52

04-07-2013 дата публикации

Switchable filters and design structures

Номер: US20130169383A1

Автор: Anthony K. Stamper, James W. Adkisson, Jeffrey P. Gambino, Mark D. Jaffe, Panglijen Candra, Randy L. Wolf, Thomas J. DUNBAR

Принадлежит: International Business Machines Corp

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

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Номер записи: 53

25-07-2013 дата публикации

Acoustic wave device

Номер: US20130187725A1

Автор: Satoru Ikeuchi

Принадлежит: Panasonic Corp

An acoustic wave device is provided with a low-frequency side filter having a low-frequency side passband, a high-frequency side filter having a high-frequency side passband, and first and second balanced terminals. The low-frequency side filter is connected to a first unbalanced terminal. The low-frequency side passband is a frequency band from a first minimum frequency to a first maximum frequency. The high-frequency side filter is connected to a second unbalanced terminal. The high-frequency side passband is a frequency band from a second minimum frequency to a second maximum frequency. The low-frequency side filter includes a first longitudinally-coupled acoustic wave resonator and a first one-terminal pair acoustic wave resonator connected in series to the first longitudinally-coupled acoustic wave resonator. An antiresonant frequency of the first one-terminal pair acoustic wave resonator is set to be higher than the first maximum frequency and lower than the second minimum frequency.

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Номер записи: 54

01-08-2013 дата публикации

Vibrator element, vibrator, oscillator, and electronic device

Номер: US20130194049A1

Автор: Teruo Takizawa

Принадлежит: Seiko Epson Corp

A vibrator element includes: a base having a mounting surface; a vibrating arm which is extended from the base and has a first surface and a second surface that faces the first surface and is positioned on the mounting surface side, and which performs flexural vibration in a direction normal to the first and second surfaces; and a laminated structure which is provided on at least one of the first and second surfaces of the vibrating arm, and which includes at least a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes, in which the vibrating arm is warped toward the mounting surface side.

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Номер записи: 55

22-08-2013 дата публикации

Surface acoustic wave device

Номер: US20130214640A1

Автор: Hisashi Yamazaki

Принадлежит: Murata Manufacturing Co Ltd

A surface acoustic wave device having high heat radiation performance is provided. A surface acoustic wave device includes a piezoelectric substrate, IDT electrodes, a cover, and wiring lines. The IDT electrodes are arranged on a main surface of the piezoelectric substrate. The cover is joined to the main surface. The wiring lines extend to join portions of the main surface and the cover. The cover is provided with through-holes facing the wiring lines, respectively. The surface acoustic wave device further includes under-bump metals arranged in the through-holes, respectively, and bumps arranged on the under-bump metals, respectively. In a plan view, each of the under-bump metals is provided in a region larger than a joint portion of each of the under-bump metals and the corresponding one of the bumps

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Номер записи: 56

29-08-2013 дата публикации

Design and Control of Multi-Temperature Micro-Oven for MEMS Devices

Номер: US20130222073A1

Автор: Francky Catthoor, Satyakiran N. Munaga

Принадлежит: Interuniversitair Microelektronica Centrum vzw IMEC, KU Leuven Research and Development

Disclosed are microelectromechanical system (MEMS) devices and methods of using the same. In some embodiments, a MEMS device comprises a micro-oven comprising a MEMS oscillator configured to generate a reference signal. The device further comprises a control unit comprising at least one input node configured to receive a parameter set, where the parameter set comprises at least a first parameter indicative of a sensed ambient temperature, and where the control system is configured to (i) based on the parameter set, select from a plurality of pre-characterized operation temperatures an operation temperature for the MEMS oscillator, and (ii) generate a temperature-setting signal indicating the selected operation temperature. The device still further comprises a temperature control system communicatively coupled to the control unit and configured to (i) receive the temperature-setting signal and (ii) maintain the MEMS oscillator at the selected operation temperature.

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Номер записи: 57

12-09-2013 дата публикации

Boundary acoustic wave device and method of manufacturing same

Номер: US20130232747A1

Автор: Hideaki Takahashi, Naohiro NODAKE, Shin Saijo

Принадлежит: Murata Manufacturing Co Ltd

In the boundary acoustic wave device, an IDT electrode, a first dielectric layer, and a second dielectric layer are provided on a piezoelectric substrate. The first dielectric layer is made of a deposited film. A thickness of the IDT electrode is about 10% or more of λ. A difference between a height of the first dielectric layer, measured from an upper surface of the piezoelectric substrate, above a center of an electrode finger of the IDT electrode and a height of the first dielectric layer, measured from the upper surface of the piezoelectric substrate, above a center of a gap between adjacent electrode fingers, i.e., a magnitude of unevenness in an upper surface of the first dielectric layer, is about 5% or less of λ.

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Номер записи: 58

19-09-2013 дата публикации

FLEXURAL VIBRATION ELEMENT AND ELECTRONIC COMPONENT

Номер: US20130241364A1

Автор: YAMADA Akinori

Принадлежит: SEIKO EPSON CORPORATION

A flexural vibration element according to a first aspect of the invention includes: a vibration element body composed of a plurality of vibrating arms provided in parallel, a connecting part connecting the vibrating arms, and one central supporting arms extending between the vibrating arms from the connecting pert in parallel with the vibrating arms at equal distance from the arms and a frame body disposed outside the vibration element body. 1. A flexural vibration element comprises:a vibration element body composed of a plurality of vibrating arms provided in parallel, a connecting part connecting the vibrating arms, and one central supporting arm extending between the vibrating arms from the connecting part in parallel with the vibrating arms at equal distance from the arms; anda frame body disposed outside the vibration element body, the vibration element body being supported by the frame body at an end part, the end part being opposite to the connecting part, of the central supporting arm,the central supporting arm and the frame body being integrally formed as a single body such that a positional relationship between the central supporting arm and the frame body is fixed, wherein the frame body has a supporting part, at an interior side thereof, extending between a pair of side parts thereof, and the end part, opposite to the connecting part, of the central supporting arm is connected to the supporting part so as to support the vibration element body.2. The flexural vibration element according to claim 1 , wherein the supporting part has a groove formed on at least one of a front surface and a rear surface thereof claim 1 , and the groove is positioned in an area that is along the supporting part and in which compressive stress and tensile stress alternately occur at a vibration element body side of the supporting part and an opposite side to the vibration element body side due to flexural vibration of the vibrating arms.3. The flexural vibration element ...

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Номер записи: 59

19-09-2013 дата публикации

Acoustic wave device

Номер: US20130241673A1

Автор: Tokihiro Nishihara, Tsuyoshi Yokoyama, Yoshiki Iwazaki, Yosuke Onda

Принадлежит: TAIYO YUDEN CO LTD

An acoustic wave device includes: a piezoelectric film made of an aluminum nitride film containing a divalent element and a tetravalent element, or a divalent element and a pentavalent element; and an electrode that excites an acoustic wave propagating through the piezoelectric film.

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Номер записи: 60

26-09-2013 дата публикации

Piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece

Номер: US20130249352A1

Автор: Daishi ARIMATSU ARIMATSU

Принадлежит: Seiko Instruments Inc

Mounting electrodes are formed in a state of being separated from excitation electrodes on one main surface of a base portion, and the excitation electrodes are formed on another main surface of a piezoelectric plate and includes base portion electrodes which are connected to the excitation electrodes and conducting portions which electrically connect the mounting electrodes and the base portion electrodes in a thickness direction of the piezoelectric plate.

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Номер записи: 61

03-10-2013 дата публикации

CRYSTAL CONTROLLED OSCILLATOR

Номер: US20130257549A1

Автор: ASAMURA FUMIO

Принадлежит: NIHON DEMPA KOGYO CO., LTD.

A crystal controlled oscillator includes a crystal package and an IC chip board that includes an IC chip integrating an oscillator circuit. The crystal package includes a first container, a crystal resonator, a lid body, and an external terminal at an outer bottom surface of the first bottom wall layer of the first container. The IC chip integrates an oscillator circuit disposed at an outer bottom surface of the first bottom wall layer of the crystal package. The oscillator circuit connects to the lower side excitation electrode of the crystal resonator from the external terminal to an input side with high impedance. The oscillator circuit connects to the upper side excitation electrode to an output side with low impedance. The upper side excitation electrode is a shielding electrode of the crystal resonator. 1. A crystal controlled oscillator , comprising:a crystal package with an insulating container that houses a crystal resonator; andan IC chip board that includes an IC chip integrating an oscillator circuit, the oscillator circuit being configured to generate an oscillation signal of a predetermined frequency based on a vibration signal of the crystal resonator, wherein a first container that includes a planar first bottom wall layer made of an insulating material and a first frame wall layer disposed at an end edge of the first bottom wall layer, the first frame wall layer forming a first depressed portion;', 'a crystal resonator housed in the first depressed portion along an inner surface of the first bottom wall layer;', 'a lid body secured to the first frame wall layer so as to hermetically seal the first depressed portion, the lid body being made of an insulating material only; and', 'an external terminal at an outer bottom surface of the first bottom wall layer of the first container, the external terminal being configured to output a vibration signal of the crystal resonator, wherein, 'the crystal package includesthe crystal resonator includes a crystal ...

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Номер записи: 62

03-10-2013 дата публикации

Resonator element, resonator, electronic device, electronic apparatus, and mobile object

Номер: US20130257553A1

Автор: Osamu Ishii

Принадлежит: Seiko Epson Corp

A resonator element includes a substrate including a first principal surface and a second principal surface respectively forming an obverse surface and a reverse surface of the substrate, and vibrating in a thickness-shear vibration mode, a first excitation electrode disposed on the first principal surface, and a second excitation electrode disposed on the second principal surface, and being larger than the first excitation electrode in a plan view, the first excitation electrode is disposed so as to fit into an outer edge of the second excitation electrode in the plan view, and the energy trap confficient M fulfills 15.5≦M≦36.7.

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Номер записи: 63

03-10-2013 дата публикации

Resonator element, resonator, electronic device, electronic apparatus, and mobile object

Номер: US20130257554A1

Автор: Osamu Ishii, Takao Morita

Принадлежит: Seiko Epson Corp

A resonator element includes a substrate vibrating in a thickness-shear vibration mode, a first excitation electrode disposed on one principal surface of the substrate, and has a shape obtained by cutting out four corners of a quadrangle, and a second excitation electrode disposed on the other principal surface of the substrate, and a ratio (S 2 /S 1 ) between the area S 1 of the quadrangle and the area S 2 of the first excitation electrode fulfills 87.7%≦(S 2 /S 1 )<95.0%.

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Номер записи: 64

03-10-2013 дата публикации

Pzt-based ferroelectric thin film and method of manufacturing the same

Номер: US20130258549A1

Автор: Hideaki Sakurai, Nobuyuki Soyama, Takashi Noguchi, Toshiaki Watanabe, Toshihiro Doi

Принадлежит: Mitsubishi Materials Corp

A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer.

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Номер записи: 65

31-10-2013 дата публикации

Elastic wave device and method for manufacturing the same

Номер: US20130285768A1

Автор: Hajime Kando, Hideki Iwamoto, Munehisa Watanabe, Syunsuke KIDO

Принадлежит: Murata Manufacturing Co Ltd

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

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Номер записи: 66

31-10-2013 дата публикации

Base substrate, electronic device, and method of manufacturing base substrate

Номер: US20130286610A1

Автор: Naohiro NAKAGAWA

Принадлежит: Seiko Epson Corp

Abase substrate includes an insulator board comprising through holes penetrating between two opposed principal surfaces, penetrating electrodes provided within the through holes, and intermediate layers sandwiched between inner surfaces of the through holes and the penetrating electrodes and having surfaces with smaller concavities and convexities than those of the inner surfaces at the penetrating electrode sides.

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Номер записи: 67

28-11-2013 дата публикации

Integration of piezoelectric materials with substrates

Номер: US20130313947A1

Автор: Alexei Gaidarzhy, David M. Chen, Guiti Zolfagharkhani, Jan H. Kuypers, Jason Goodelle

Принадлежит: Sand 9 Inc

Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

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Номер записи: 68

12-12-2013 дата публикации

Piezoelectric vibrating piece and piezoelectric device

Номер: US20130328449A1

Автор: Shuichi Mizusawa, Takehiro Takahashi

Принадлежит: Nihon Dempa Kogyo Co Ltd

A piezoelectric vibrating piece includes a vibrator, a framing portion, and a connecting portion. The vibrator vibrates at a predetermined vibration frequency. The vibrator includes excitation electrodes on both principal surfaces. The vibrator is formed at a predetermined thickness. The framing portion surrounds a peripheral area of the vibrator. The connecting portion connects the vibrator and the framing portion. The vibrator has a side surface. At least a part of the side surface is formed into a taper shape such that a thickness of the vibrator becomes thin as close to an outer periphery of the vibrator. The piezoelectric vibrating piece further includes an extraction electrode extracted from each of the excitation electrodes to the framing portion via the connecting portions. One of the extraction electrodes is extracted from one principal surface to another principal surface via a taper-shaped side surface of the vibrator.

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Номер записи: 69

12-12-2013 дата публикации

FILTER AND DUPLEXER

Номер: US20130328639A1

Автор: NISHIZAWA Toshio, SHIMOMURA Hikaru, YABUUCHI Naoya

Принадлежит:

A filter includes: a filter circuit connected between a first terminal and a second terminal; and a matching circuit connected between the filter circuit and the second terminal, wherein an impedance viewed from the second terminal toward the matching circuit is less than an impedance viewed from a node between the filter circuit and the matching circuit toward the filter circuit. 1. A filter comprising:a filter circuit connected between a first terminal and a second terminal; anda matching circuit connected between the filter circuit and the second terminal, whereinan impedance viewed from the second terminal toward the matching circuit is less than an impedance viewed from a node between the filter circuit and the matching circuit toward the filter circuit.2. The filter according to claim 1 , whereinthe filter circuit includes an IDT (Interdigital Transducer).3. The filter according to claim 1 , whereinthe second terminal includes two balanced terminal, andthe matching circuit includes two inductors, each connected in series to a corresponding balanced terminal of the two balanced terminals.4. The filter according to claim 3 , whereinthe two inductors have different inductances.5. The filter according to claim 3 , whereinthe filter circuit includes a first DMS filter coupled to one of the two balanced terminals and a second DMS filter coupled to another of the two balanced terminals.6. The filter according to claim 5 , whereinthe filter circuit includes a third DMS filter connected in series to the first DMS filter and a fourth DMS filter connected in series to the second DMS filter.7. The filter according to claim 3 , whereinthe filter circuit includes a DMS filter commonly coupled to the two balanced terminal.8. The filter according to claim 7 , whereinthe DMS filter includes five IDTs arranged in a propagation direction of a surface acoustic wave,IDTs at both sides and an IDT at a center of the five IDTs are commonly coupled to the first terminal, and each of ...

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Номер записи: 70

19-12-2013 дата публикации

ACOUSTIC WAVE ELEMENT AND ACOUSTIC WAVE DEVICE USING SAME

Номер: US20130335170A1

Автор: Ikuta Takanori, Tanaka Hiroyuki

Принадлежит: KYOCERA CORPORATION

A SAW element has a substrate, electrode fingers on an upper surface of the substrate, and mass-adding films on upper surfaces of the electrode fingers. When viewing the cross-sections perpendicular to the extending directions of the electrode fingers, the mass-adding films have the narrowest widths at an upper sides in the cross-sections. By arranging the mass-adding films having such shape on the upper surfaces of the electrode fingers, the electromechanical coupling factor can be made high. 1. An acoustic wave element , comprising:a piezoelectric substrate;electrode fingers on an upper surface of the piezoelectric substrate; andmass-adding films on upper surfaces of the electrode fingers,wherein, when viewing cross-sections perpendicular to the extending directions of the electrode fingers, the mass-adding films have the narrowest widths at an upper sides in the cross-sections.2. The acoustic wave element according to claim 1 , further comprising: covers the electrode fingers on which the mass-adding films are arranged and a portion of the upper surface of the piezoelectric substrate which is exposed from the electrode fingers and', 'has a thickness from the upper surface of the piezoelectric substrate is larger than a total thickness of the electrode fingers and mass-adding films., 'an insulation layer which'}3. The acoustic wave element according to claim 2 , wherein the insulation layer contains a silicon oxide as a major component.4. The acoustic wave element according to claim 2 , wherein the mass-adding films contain a material as a major component claim 2 , the material having a larger acoustic impedance than those of material of the electrode fingers and material of the insulation layer and having a slower propagation velocity of the acoustic wave than those of the material of the electrode fingers and the material of the insulation layer.5. The acoustic wave element according to claim 1 , wherein the mass-adding films comprise an insulation material as a ...

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Номер записи: 71

26-12-2013 дата публикации

HIGH COUPLING, LOW LOSS PBAW DEVICE AND ASSOCIATED METHOD

Номер: US20130342286A1

Автор: Abbott Benjamin P., Naumenko Natalya F., Solal Marc

Принадлежит:

In embodiments, a piezoelectric acoustic wave (PBAW) device may include a substrate and a resonator comprising a plurality of electrodes coupled with the surface of the substrate. A dielectric overcoat may be disposed over the substrate and the resonator. In embodiments, and electrode in the resonator electrode may have a width that is based at least in part on a period of the resonator. By selecting the width of the electrode based at least in part on the period of the resonator, a spurious-mode of the passband of the PBAW device may be suppressed. 1. A piezoelectric boundary acoustic wave (PBAW) device comprising:a substrate;a resonator coupled with a surface of the substrate, the resonator comprising a plurality of electrodes having a period, and an electrode in the plurality of electrodes having a width based at least in part on a period of the electrode;a dielectric overcoat coupled with the substrate and the resonator, the dielectric overcoat disposed over the substrate and the resonator, the dielectric overcoat having a shear wave velocity; andan additional material coupled with a surface of the dielectric overcoat, the additional material having a shear wave velocity that is greater than the shear wave velocity of the dielectric overcoat.2. The PBAW device of claim 1 , wherein a ratio of the width to the period is equal to 0.5*(p/p−1)≦a/p−0.5≦1.5*(p/p−1) where p is the period claim 1 , a is the width claim 1 , and pis a reference period of the PBAW device.3. The PBAW device of claim 2 , wherein the ratio of the width to the period is equal to 0.5+(p/p−1).4. The PBAW device of claim 1 , wherein the substrate comprises lithium niobate (LiNbO).5. The PBAW device of claim 1 , wherein the dielectric overcoat comprises silicon oxide (SiOx).6. The PBAW device of claim 1 , wherein the resonator has an electromechanical coupling factor of approximately 16 percent.7. The PBAW device of claim 1 , wherein the substrate has a Y-rotation of between 18 and 24 degrees.8. ...

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Номер записи: 72

26-12-2013 дата публикации

ELECTRONIC COMPONENT AND METHOD FOR PRODUCING THE ELECTRONIC COMPONENT

Номер: US20130343028A1

Автор: Henn Gudrun

Принадлежит: EPCOS AG

The invention specifies an electronic component which has a first electrode (), a second electrode (), an active region (), which is electrically coupled to the first electrode () and to the second electrode (), and a housing (), wherein the housing () contains carbon layers which are monoatomic at least in subregions. 1. An electronic component comprising:a first electrode;a second electrode;an active region, which is electrically coupled to the first electrode and the second electrode; anda housing, wherein the housing contains monoatomic carbon layers at least in partial regions.2. The electronic component according to claim 1 , wherein the monoatomic carbon layers are planar claim 1 , are shaped to form tubes or are partly planar and partly shaped to form tubes.3. The electronic component according to or claim 1 , wherein the monoatomic carbon layers are arranged as monolayers or as multilayers.4. The electronic component according to claim 1 , which is an electroacoustic component claim 1 , wherein the active region comprises a piezoelectric layer.5. The electronic component according to claim 4 , wherein the first and second electrodes are arranged on one side of the piezoelectric layer or on mutually opposite sides of the piezoelectric layer.6. The electronic component according to claim 1 , wherein the housing has a cavity arranged on the active region.7. The electronic component according to claim 6 , wherein a layer sequence spanning the cavity is arranged on the cavity.8. The electronic component according to claim 7 , wherein a first stabilizing layer is arranged between the cavity and the layer sequence.9. The electronic component according to or claim 7 , wherein the layer sequence has at least one stabilizing layer comprising monoatomic carbon layers.10. The electronic component according to claim 8 , wherein the first stabilizing layer comprises monoatomic carbon layers.11. The electronic component according to claim 9 , wherein the stabilizing layer ...

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Номер записи: 73

09-01-2014 дата публикации

High-frequency module

Номер: US20140009240A1

Автор: Masanori Kato, Takashi Kihara, Tatsuro Nagai

Принадлежит: Murata Manufacturing Co Ltd

A high-frequency module includes a mount board, a wave splitter chip mounted on one principal surface of the mount board and including a transmission filter and a reception filter, a first inductor chip mounted on one principal surface of the mount board and including an inductor, and a second inductor chip mounted on one principal surface of the mount board and including an inductor. The first and second inductor chips are disposed adjacent to each other and each has a polarity. The first and second inductor chips are disposed such that the polarities thereof are opposite to each other, as viewed from the reception filter.

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Номер записи: 74

09-01-2014 дата публикации

TUNABLE MEMS RESONATORS

Номер: US20140009249A1

Автор: PARK Sang-June

Принадлежит: QUALCOMM INCORPORATED

Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable layer located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge. 1. A resonator , comprising:a cavity;a post extending into the cavity;a movable plate located within the cavity and spaced apart from the post;a biasing electrode located on the opposite side of the movable plate as the post; anda dielectric layer located between the movable plate and the biasing electrode, wherein application of a voltage to the biasing electrode causes movement of the movable plate towards the biasing electrode.2. The resonator of claim 1 , additionally including a metal layer covering at least a surface of the post facing the movable plate claim 1 , wherein a variable capacitor is formed between the movable plate and the metal layer.3. The resonator of claim 2 , wherein application of the voltage to the biasing electrode increases a resonance frequency of the resonator.4. The resonator of claim 2 , additionally including a dielectric material located between the metal layer and the movable plate.5. The resonator of claim 4 , wherein the dielectric material is located on a surface of the movable plate facing the post.6. The resonator of claim 4 , wherein the dielectric material is located on a surface of the metal layer facing the ...

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Номер записи: 75

16-01-2014 дата публикации

METHOD FOR MANUFACTURING ELECTRONIC COMPONENT MODULE AND ELECTRONIC COMPONENT MODULE

Номер: US20140015373A1

Автор: KANAE Masaaki

Принадлежит: MURATA MANUFACTURING CO., LTD.

A method for producing an electronic component module prevents a space from collapsing. The method includes a step of preparing an electronic component including an element substrate, a drive device formed on a principal surface of the element substrate, and a protection device covering the drive device so as to form a space around the drive device; a step of fixing the electronic component on a common substrate such that a principal surface of the common substrate and another principal surface of the element substrate face each other; a step of fixing a reinforcing plate on the protection device of the electronic component; and a step of forming a resin layer on the principal surface of the common substrate such that the electronic component is contained therein. 1. (canceled)2. A method for manufacturing an electronic component module , the method comprising:a step of preparing an electronic component including an element substrate, a drive device formed on a principal surface of the element substrate, and a protection device arranged so as to form a space around the drive device and cover the drive device;a step of preparing a common substrate, and mounting and fixing the electronic component on the common substrate by using a mounter such that a principal surface of the common substrate and another principal surface of the element substrate face each other;a step of mounting and fixing a reinforcing plate on the protection device of the electronic component by using a mounter; anda step of forming a resin layer on the principal surface of the common substrate such that the electronic component is contained therein.3. The method for manufacturing the electronic component module according to claim 2 , wherein claim 2 , in the step of fixing the reinforcing plate claim 2 , an adhesive layer is previously formed on a surface of the reinforcing plate claim 2 , and the reinforcing plate is fixed such that the adhesive layer is located between the protection device and ...

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Номер записи: 76

16-01-2014 дата публикации

Semiconductor device, manufacturing method of the same, and mobile phone

Номер: US20140018126A1

Автор: Atsushi Isobe, Kengo Asai

Принадлежит: Renesas Electronics Corp

A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1 S including an area AR 1 on which an LDMOSFET is formed and an area AR 2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1 S.

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Номер записи: 77

23-01-2014 дата публикации

Temperature sensor comprising a high-overtone bulk acoustic resonator

Номер: US20140023109A1

Автор: Jean Ballandras Sylvain

Принадлежит: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

This temperature sensor ( 2 ) includes an HBAR resonator ( 10 ), a unit ( 20 ) for determining the difference between two distinct resonance frequencies at a temperature T, measured between two electrodes of a same pair of the HBAR resonator and a unit ( 30 ) for determining the temperature of the resonator from the difference in frequencies and from a one-to-one function providing the match between the temperature and the frequency difference. The resonator ( 10 ) is formed by a stack of a first electrode ( 18 ), a transducer ( 12 ), a second electrode ( 19 ), and acoustic substrate ( 14 ) and the cuts of the transducer ( 12 ) and of the substrate ( 14 ) are selected so as to obtain high electro-acoustic couplings and a difference in frequency temperature sensitivities between two distinct vibration modes co-existing within the resonator, greater than or equal to 1 ppm·K −1 .

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Номер записи: 78

30-01-2014 дата публикации

Resonator Electrode Shields

Номер: US20140028410A1

Автор: Aaron Partridge, David Raymond Pedersen, Thor Juneau

Принадлежит: Sitime Corp

A MEMS resonator system that reduces interference signals arising from undesired capacitive coupling between different system elements. The system, in one embodiment, includes a MEMS resonator, electrodes, and at least one resonator electrode shield. In certain embodiments, the resonator electrode shield ensures that the resonator electrodes interact with either one or more shunting nodes or the active elements of the MEMS resonator by preventing or reducing, among other things, capacitive coupling between the resonator electrodes and the support and auxiliary elements of the MEMS resonator structure. By reducing the deleterious effects of interfering signals using one or more resonator electrode shields, a simpler, lower interference, and more efficient system relative to prior art approaches is presented.

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Номер записи: 79

06-02-2014 дата публикации

Piezoelectric device

Номер: US20140035440A1

Автор: Hitoshi Sakuma, Katsuyuki Kurachi, Kazuhiko Maejima, Yasuhiro Aida

Принадлежит: TDK Corp

A piezoelectric device according to the present invention is provided with a pair of electrode films, a piezoelectric film sandwiched in between the pair of electrode films, and a stress control film which is in direct contact with a surface of at least one of the pair of electrode films, on the side where the electrode film is not in contact with the piezoelectric film, and which has a linear expansion coefficient larger than those of the relevant electrode film and the piezoelectric film.

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Номер записи: 80

20-02-2014 дата публикации

Acoustic wave filter, duplexer, and module

Номер: US20140049340A1

Автор: Shogo Inoue

Принадлежит: TAIYO YUDEN CO LTD

An acoustic wave filter includes: at least a parallel resonator, wherein at least one of the parallel resonator includes a piezoelectric substance, an IDT located on the piezoelectric substance, and reflectors located on the piezoelectric substance so as to sandwich the IDT, and a distance between a first electrode finger that is an electrode finger closest to the reflector among electrode fingers of the IDT and a second electrode finger that is an electrode finger closest to the IDT among electrode fingers of the reflector is less than 0.25(λ IDT +λ ref ) where a period of the electrode fingers of the IDT is λ IDT and a period of the electrode fingers of the reflector is λ ref .

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Номер записи: 81

27-02-2014 дата публикации

PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20140055008A1

Автор: ITO Korekiyo

Принадлежит: MURATA MANUFACTURING CO., LTD.

In a piezoelectric device and a method of manufacturing thereof, after an ion implanted portion is formed in a piezoelectric single crystal substrate by implantation of hydrogen ions, an interlayer of a metal is formed on a rear surface of the piezoelectric single crystal substrate. In addition, a support member is bonded to the piezoelectric single crystal substrate with the interlayer interposed therebetween. A composite piezoelectric body in which the ion implanted portion is formed is heated at about 450° C. to about 700° C. to oxidize the metal of the interlayer so as to decrease the conductivity thereof. Accordingly, the conductivity of the interlayer is decreased, so that a piezoelectric device having excellent resonance characteristics is provided. 1. A piezoelectric device comprising:a piezoelectric thin film on which an electrode is provided; anda support member arranged to support the piezoelectric thin film; whereinthe piezoelectric device includes an interlayer which includes an oxidized or a nitrided metal and which is provided between the piezoelectric thin film and the support member.2. The piezoelectric device according to claim 1 , wherein the oxidized or the nitrided metal includes at least one element selected from Fe claim 1 , Cr claim 1 , Ni claim 1 , Al claim 1 , W claim 1 , and Cu.3. The piezoelectric device according to claim 1 , wherein the interlayer has a thickness of about 2 nm to about 25 nm.4. The piezoelectric device according to claim 1 , wherein the piezoelectric thin film includes lithium tantalate or lithium niobate.5. The piezoelectric device according to claim 1 , wherein the piezoelectric thin film has a conductivity of about 1.0×10Ω·mto about 1.0×10Ω·m. 1. Field of the InventionThe present invention relates to a piezoelectric device including a piezoelectric single-crystal thin film and a support member supporting the thin film and a method for manufacturing the piezoelectric device.2. Description of the Related ArtAt present, ...

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Номер записи: 82

06-03-2014 дата публикации

METHODS AND APPARATUS FOR TEMPERATURE CONTROL OF DEVICES AND MECHANICAL RESONATING STRUCTURES

Номер: US20140062262A1

Автор: Rebel Reimund, Schoepf Klaus Juergen

Принадлежит: Sand 9, Inc.

Methods and apparatus for temperature control of devices and mechanical resonating structures are described. A mechanical resonating structure may include a heating element and a temperature sensor. The temperature sensor may sense the temperature of the mechanical resonating structure, and the heating element may be adjusted to provide a desired level of heating. Optionally, additional heating elements and/or temperature sensors may be included. 1. A device , comprising: a heating element configured to control a temperature of the piezoelectric mechanical resonating structure, the heating element comprising a metal or a doped semiconductor, and', 'a temperature sensor configured to detect the temperature of the mechanical resonating structure., 'a piezoelectric mechanical resonating structure formed at least partially of a piezoelectric material and including2. The device of claim 1 , wherein the piezoelectric mechanical resonating structure has a largest dimension of less than approximately 1000 microns.3. The device of claim 1 , wherein the heating element comprises a conductive trace formed of the metal.4. The device of claim 1 , wherein the heating element comprises a conductive trace formed of the doped semiconductor.5. The device of claim 1 , wherein the heating element comprises the metal.6. The device of claim 1 , wherein the heating element comprises the doped semiconductor.7. The device of claim 1 , wherein the heating element comprises an electrode of the piezoelectric mechanical resonating structure.8. The device of claim 7 , wherein the electrode is a first electrode and wherein temperature sensor comprises a second electrode of the mechanical resonating structure.9. The device of claim 1 , wherein the temperature sensor comprises a conductive trace.10. The device of claim 9 , wherein at least part of the conductive trace is formed of a metal.11. The device of claim 9 , wherein at least part of the conductive trace is formed of a conductive ...

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Номер записи: 83

20-03-2014 дата публикации

Method for manufacturing baw resonators on a semiconductor wafer

Номер: US20140075726A1

Автор: David Petit, Jean-François Carpentier, Pierre Bar, Pierre Dautriche, Sylvain Joblot

Принадлежит: STMicroelectronics Crolles 2 SAS, STMICROELECTRONICS SA

A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.

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Номер записи: 84

27-03-2014 дата публикации

Acoustic structure comprising at least one resonator and at least one cointegrated capacitor in one and the same piezoelectric or ferroelectric layer

Номер: US20140085020A1

Автор: Alexandre Reinhardt, Jean-Baptiste David, Julie Abergel

Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

An acoustic structure, comprising at least one acoustic resonator exhibiting at least one resonant frequency in a band of operating frequencies and an integrated capacitor, further comprises: a stack of layers, comprising at least one active layer of piezoelectric material or of ferroelectric material; the resonator being frequency tunable and being produced by a first subset of layers of the stack comprising the at least one active layer and at least two electrodes; the integrated capacitor being produced by a second subset of layers comprising the active layer and at least two electrodes; the first and second subsets of layers being distinguished by a modification of layers so as to exhibit different resonant frequencies.

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Номер записи: 85

03-04-2014 дата публикации

INTEGRATED SEMICONDUCTOR DEVICES WITH AMORPHOUS SILICON BEAM, METHODS OF MANUFACTURE AND DESIGN STRUCTURE

Номер: US20140091407A1

Автор: Luce Stephen E., Stamper Anthony K.

Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming a via through the insulator material and exposing a material underlying the amorphous silicon beam. The method further includes providing a sacrificial material in the via and over the amorphous silicon beam. The method further includes providing a lid on the sacrificial material and over the insulator material. The method further includes venting, through the lid, the sacrificial material and the underlying material to form an upper cavity above the amorphous silicon beam and a lower cavity below the amorphous silicon beam, respectively. 1. A structure , comprising:an amorphous silicon beam formed on a first insulator layer;an upper cavity formed above the amorphous silicon beam, over a portion of the first insulator material;a lower cavity formed below the amorphous silicon beam;a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the first insulator material; anda Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) on the amorphous silicon beam.2. The structure of claim 1 , further comprising an active semiconductor layer of a wafer claim 1 , wherein the lower cavity is formed over the active semiconductor layer.3. The structure of claim 2 , wherein the wafer is BULK silicon.4. The structure of claim 2 , further comprising one or more devices formed in the active semiconductor layer.5. The structure of claim 4 , wherein the BAW filter or the BAR is in electrical connection with at least one of the one or more devices.6. The structure of claim 1 , wherein the lower cavity is formed in the first insulator layer.7. The structure of claim 6 , further ...

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Номер записи: 86

03-04-2014 дата публикации

CRYSTAL UNIT

Номер: US20140091676A1

Автор: KUSUNOKI TOYOAKI

Принадлежит: NIHON DEMPA KOGYO CO., LTD.

A crystal unit according to this disclosure includes an IT-cut round crystal element supported at two points on an outer periphery portion of the IT-cut round crystal element. A rotation angle in plane between a straight line connecting the two points and Z″ axis of a double-rotation is within a specific range. The specific range includes an angle where an amount of frequency variation is zero. 1. A crystal unit , comprising:an IT-cut round crystal element, supported at two points on an outer periphery portion of the IT-cut round crystal element, whereina rotation angle in plane between a straight line connecting the two points and Z″ axis of a double-rotation is within a specific range, the specific range including an angle where an amount of frequency variation is zero.2. The crystal unit according to claim 1 , whereinthe specific range is one of a range where the rotation angle in plane from Z″ axis is in a range of −12 degrees to +4 degrees and a range where the rotation angle in plane from Z″ axis is in a range of +60 degrees to +80 degrees.3. The crystal unit according to claim 1 , whereinthe crystal element includes a notched portion at positions of the supported two points, wherein the crystal unit further comprises:a supporter that supports the crystal element, the supporter including a slit engaging the notched portion, whereinthe notched portion includes a horizontal portion and a vertical portion, the horizontal portion being formed from the supported point toward the center of the crystal element, and the vertical portion being formed vertically downward from the end portion of the horizontal portion close to the center, andthe horizontal portion of the notched portion engages the slit of the supporter to support the crystal element.4. The crystal unit according to claim 2 , whereinthe crystal element includes a notched portion at positions of the supported two points, wherein the crystal unit further comprises:a supporter that supports the crystal ...

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Номер записи: 87

06-01-2022 дата публикации

FILTER ASSEMBLY WITH TWO TYPES OF ACOUSTIC WAVE RESONATORS

Номер: US20220006444A1

Автор: Ando Yoshiaki, NAKAMURA Hiroyuki, Saito Yasuyuki

Принадлежит:

Multiplexers are disclosed. A multiplexer can include a first filter and a second filter that are coupled to a common node. The second filter can include a first type of acoustic wave resonators (e.g., bulk acoustic wave resonators) and a series acoustic wave resonator of a second type (e.g., a surface acoustic wave resonator) that is coupled between the acoustic wave resonators of the first type and the common node. The first filter can provide a single-ended radio frequency signal. In certain embodiments, the first filter can be a receive filter and the second filter can be a transmit filter. 1. (canceled)2. A filter assembly comprising:a transmit filter having an output coupled to a common node, the transmit filter including a first stage serially connected with at least a second stage, the first stage including a first plurality of acoustic wave resonators of a first type, the second stage including a second plurality of acoustic wave resonators of a second type but not the first type, the second plurality of acoustic wave resonators having a higher suppression of a second harmonic of a radio frequency signal than the first plurality of acoustic wave resonators; anda receive filter having an input coupled to the common node, the receive filter configured to provide a single-ended radio frequency signal output.3. The filter assembly of wherein the first plurality of acoustic wave resonators of the first type are bulk acoustic wave resonators and the second plurality of acoustic wave resonators of the second type are surface acoustic wave resonators.4. The filter assembly of wherein the bulk acoustic wave resonators and the surface acoustic wave resonators are implemented on a common filter die.5. The filter assembly of wherein the filter assembly includes a first die that includes the first plurality of acoustic wave resonators of the first type and a second die that includes the second plurality of acoustic wave resonators of the second type.6. The filter ...

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Номер записи: 88

13-01-2022 дата публикации

Lamb wave resonator and other type of acoustic wave resonator included in one or more filters

Номер: US20220014169A1

Автор: Benjamin Paul Abbott, Joshua James CARON, Toru Jibu

Принадлежит: Skyworks Solutions Inc

Aspects of this disclosure relate to acoustic wave filters that include a Lamb wave resonator and a second acoustic wave resonator that is a different type of acoustic wave resonator than the Lamb wave resonator. The different type of resonator can be a film bulk acoustic wave resonator for example. Some embodiments of this disclosure relate to an acoustic wave filter that includes the Lamb wave resonator and the second acoustic wave resonator. Some embodiments of this disclosure related to different respective acoustic wave filters including the Lamb wave resonator and the second acoustic wave resonator, in which the Lamb wave resonator and the second acoustic wave resonator are implemented on a common substrate.

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Номер записи: 89

13-01-2022 дата публикации

ACOUSTIC WAVE DEVICE

Номер: US20220014174A1

Автор: KADOTA Michio, Tanaka Shuji

Принадлежит:

An acoustic wave device includes a support substrate, a piezoelectric body, an acoustic layer laminate, first and second electrodes, and a lead-out electrode. The first electrode is on a first main surface of the piezoelectric body, the second electrode is on a second main surface of the piezoelectric body, the lead-out electrode is on the first main surface or the second main surface of the piezoelectric body, the lead-out electrode is electrically connected to the first electrode or the second electrode, side surface grooves extend from the first main surface side of the piezoelectric body, and the side surface grooves are provided in at least a portion of a remaining portion excluding a portion provided with the lead-out electrode from a region in an outer side portion of at least one of the first electrode and the second electrode. 1. An acoustic wave device comprising:a support substrate;a piezoelectric body including a first main surface and a second main surface opposed to the first main surface;a first electrode on the first main surface of the piezoelectric body;a second electrode on the second main surface of the piezoelectric body;an acoustic layer laminate between the second main surface and the support substrate; anda lead-out electrode electrically connected to the first electrode or the second electrode and provided on the first main surface or the second main surface of the piezoelectric body; whereinthe piezoelectric body includes a groove in at least a portion of a remaining portion excluding a portion provided with the lead-out electrode from a region in an outer side portion of at least one of the first electrode and the second electrode in a plan view from a thickness direction of the piezoelectric body.2. The acoustic wave device according to claim 1 , wherein a depth of the groove is equal to or larger than a thickness of the piezoelectric body.3. The acoustic wave device according to claim 1 , whereinthe acoustic layer laminate includes a ...

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Номер записи: 90

13-01-2022 дата публикации

ACOUSTIC WAVE DEVICE

Номер: US20220014175A1

Автор: DAIMON Katsuya, NAGATOMO Shou

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An acoustic wave device includes an energy confinement layer, a piezoelectric layer made of Y-cut X-propagation lithium tantalate having a cut angle in a range from about −10° to about 65°, and an IDT electrode. Electrode fingers of the IDT electrode include an Al metal layer and a high acoustic impedance metal layer having a Young's modulus equal to or more than about 200 GPa and an acoustic impedance higher than Al. The high acoustic impedance metal layer is closer to the piezoelectric layer than the Al metal layer. A wavelength specific film thickness tof the piezoelectric layer is expressed by t≤1λ. The total of normalized film thicknesses obtained by normalizing the film thickness of each layer of the electrode finger by a density and Young's modulus of the Al metal layer satisfies T≤0.1125t+0.0574. 1. An acoustic wave device comprising:an energy confinement layer;a piezoelectric layer on the energy confinement layer and made of Y-cut X-propagation lithium tantalate having a cut angle of equal to or more than about −10° and equal to or less than about 65°; andan IDT electrode on the piezoelectric layer; whereinthe IDT electrode includes a plurality of electrode fingers, the plurality of electrode fingers including a multilayer body including an Al metal layer defined by an Al layer or an alloy layer including Al, and a high acoustic impedance metal layer that has a Young's modulus equal to or more than about 200 GPa and a higher acoustic impedance than an acoustic impedance of Al;the high acoustic impedance metal layer is closer to the piezoelectric layer than the Al metal layer;{'sub': LT', 'LT, 'when a wavelength defined by an electrode finger pitch of the IDT electrode is denoted by λ and a wavelength specific film thickness of the piezoelectric layer is denoted by t, t≤1λ is satisfied; and'}{'sub': 'LT', "a total of normalized film thicknesses obtained by normalizing a film thickness of each layer of the plurality of electrode fingers by a density and a ...

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Номер записи: 91

13-01-2022 дата публикации

ACOUSTIC WAVE DEVICE WITH TRANSVERSE SPURIOUS MODE SUPPRESSION

Номер: US20220014177A1

Автор: Lam Chun Sing, Liu Jiansong, LIU YUHAO

Принадлежит:

An acoustic wave device with a bent section is disclosed. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The bent section is arranged to create a curvature in a waveguide of the acoustic wave device to suppress a transverse spurious mode of the acoustic wave device. 1. An acoustic wave device comprising:a piezoelectric layer;an interdigital transducer electrode on the piezoelectric layer, the interdigital transducer electrode including a bus bar and fingers extending from the bus bar, the interdigital transducer electrode creating a curvature in an acoustic aperture of the acoustic wave device; anda piston mode structure.2. The acoustic wave device of wherein the interdigital transducer includes a bent section claim 1 , and the fingers include inner fingers positioned between two outer fingers in the bent section claim 1 , and the bent section has a bend angle between intersecting lines extending from outer edges of the two outer fingers.3. The acoustic wave device of wherein the bend angle is in a range from 1° to 20°.4. The acoustic wave device of wherein the bend angle is in a range from 10° to 20°.5. The acoustic wave device of wherein the piston mode structure includes an end portion of at least one of the fingers claim 1 , and the end portion includes wider metal than other portions of the at least one of the fingers.6. The acoustic wave device of wherein the piston mode structure includes an end portion of at least one of the fingers claim 1 , and the end portion includes thicker metal than other portions of the at least one of the fingers.7. The acoustic wave device of wherein the piston mode structure includes an oxide over an end portion of at least one of the fingers.8. The acoustic wave device of wherein the piston mode structure includes a trench in a dispersion adjustment layer over the interdigital transducer electrode.9. The acoustic wave device of wherein the bus bar ...

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Номер записи: 92

05-01-2017 дата публикации

CRYSTAL OSCILLATOR PACKAGE

Номер: US20170005636A1

Автор: KIM Sung Wook, LEE Dong Woo, LEE Jong Pil, Lim Seung Mo

Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A crystal oscillator package includes a crystal piece configured to vibrate in response to an electrical signal, a first vibrating part protruding from an upper surface of the crystal piece, a second vibrating part protruding from a lower surface of the crystal piece, a first exciting electrode disposed on the first vibrating part, a second exciting electrode disposed on the second vibrating part, and protrusions extending from an end portion of the lower surface of the crystal piece. The protrusions include two or more stages. 1. A crystal oscillator package comprising:a crystal piece configured to vibrate in response to an electrical signal;a first vibrating part protruding from an upper surface of the crystal piece;a second vibrating part protruding from a lower surface of the crystal piece;a first exciting electrode disposed on the first vibrating part;a second exciting electrode disposed on the second vibrating part; andprotrusions extending from an end portion of the lower surface of the crystal piece,wherein the protrusions comprise two or more stages.2. The crystal oscillator package of claim 1 , wherein a height of the protrusions is less than or equal to a height of the first and second vibrating parts.3. The crystal oscillator package of claim 1 , wherein the protrusions are formed by etching the crystal piece.4. The crystal oscillator package of claim 1 , further comprising first and second connection electrodes electrically connected to the first and second exciting electrodes to thereby connect to an external power supply claim 1 , wherein the first and second connection electrodes are disposed on outer surfaces of the protrusions.5. The crystal oscillator package of claim 1 , wherein the protrusions increase an adhesion area.6. The crystal oscillator package of claim 1 , wherein a height of the protrusions is greater than the height of the first and second vibrating parts.7. A crystal oscillator package comprising:a base substrate;a first electrode ...

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Номер записи: 93

05-01-2017 дата публикации

WAVE SEPARATOR

Номер: US20170005637A1

Автор: NAKAMURA Soichi

Принадлежит:

A wave separator includes an n number (n being a natural number of 3 or larger) of band pass filters having an n number or larger of mutually different pass bands, and a common terminal. For a first of the band pass filters that is one of a band pass filter having a center frequency of a pass band at a lowest side and a band pass filter having a center frequency of a pass band at a highest side and that has a larger or equal difference in a center frequency of a pass band from an adjacent band pass filter as compared with the other band pass filter satisfies a predetermined configuration for a second band pass filter having a pass band adjacent to the first band pass filter. 1. A wave separator comprising:an n number of band pass filters including an n number or larger of mutually different pass bands where n is a natural number of 3 or larger; anda common terminal commonly provided for the n number of band pass filters; whereinamong the n number of band pass filters, for a first band pass filter that is one of a band pass filter having a center frequency of a pass band at a lowest side and a band pass filter having a center frequency of a pass band at a highest side and that has a larger or equal difference in a center frequency of a pass band from an adjacent band pass filter as compared with the other band pass filter, when f(1) is a center frequency of a pass band and B(1) is a susceptance value with the center frequency viewed from the common terminal; andamong the n number of band pass filters, for a second band pass filter having a pass band adjacent to the first band pass filter, when f(2) is a center frequency of a pass band and B(2) is a susceptance value with the center frequency viewed from the common terminal;the first band pass filter satisfies one of a configuration (i) and a configuration (ii) for the second band pass filter as follows:(i) B(2)×{2×f(2)−f(1)}/f(1) Подробнее

Номер записи: 94

05-01-2017 дата публикации

ELASTIC WAVE FILTER DEVICE

Номер: US20170005638A1

Автор: IWAMOTO Hideki, KIDO Syunsuke, OTAGAWA Masanori

Принадлежит:

A SAW filter device defines a filter including a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode are stacked in this order. A comb capacitive electrode electrically coupled to the filter is provided on the piezoelectric film. Where λc is a wavelength determined by an electrode finger pitch of the comb capacitive electrode, and, among modes of an elastic wave generated by the comb capacitive electrode, Vis an acoustic velocity of a P+SV wave, Vis an acoustic velocity of a SH wave, and Vis an acoustic velocity of, out of higher-order modes of a SH wave, a higher-order mode at the lowest frequency side, Vf, or V/λf. 2. The elastic wave filter device according to claim 1 , wherein ψ of the Euler angles claim 1 , the Euler angles being a propagation orientation of an elastic wave generated by the comb capacitive electrode claim 1 , is within a range from about 86° to about 94° inclusive.3. The elastic wave filter device according to claim 2 , wherein V/λf.4. The elastic wave filter device according to claim 1 , wherein the high acoustic velocity member is a high acoustic velocity film claim 1 , and the elastic wave filter device further comprises a support substrate with an upper surface on which the high acoustic velocity film is stacked.5. The elastic wave filter device according to claim 1 , wherein the high acoustic velocity member is made of a high acoustic velocity substrate.6. The elastic wave filter device according to claim 1 , whereinthe comb capacitive electrode includes a pair of busbars facing each other;the IDT electrode includes a first IDT electrode ...

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Номер записи: 95

07-01-2016 дата публикации

RADIO FREQUENCY SWITCHING SYSTEM WITH IMPROVED LINEARITY

Номер: US20160006409A1

Автор: KEANE JOHN

Принадлежит: FERFICS LIMITED

A radio frequency (RF) circuit is described that comprises a plurality of switching arms selectively activatable and associated with corresponding RF input ports. A switch source impedance is associated with each of the RF input ports. The switch source impedance is frequency dependent with its value matched to a characteristic impedance value within a first frequency range. The value of the switch source impedance is not matched to the characteristic impedance value within a second frequency range. When an RF signal within the first frequency range is transmitted through the RF circuit, between one of the RF input ports and an a common port, an RF distortion voltage within a distortion frequency range results at the common port; and the amplitude of a resultant RF distortion voltage is lower than an RF distortion voltage if the switched source impedance is matched to the characteristic impedance within the second frequency range. 1. A radio frequency (RF) circuit comprising:a plurality of switching arms associated with corresponding RF input ports; the switching arms being controllable to be selectively activated; anda switch source impedance associated with each of the RF input ports; the switch source impedance being frequency dependent such that its value is matched to a characteristic impedance value within a first frequency range; and the value of the switch source impedance is not matched to the characteristic impedance value within a second frequency range; whereinwhen an RF signal within the first frequency range is transmitted through the RF circuit, between one of the RF input ports and an a common port, an RF distortion voltage within a distortion frequency range results at the common port; and the amplitude of a resultant RF distortion voltage is lower than an RF distortion voltage if the switch source impedance is matched to the characteristic impedance within the second frequency range.2. An RF circuit as claimed in claim 1 , wherein the second ...

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Номер записи: 96

07-01-2016 дата публикации

ACOUSTIC WAVE DEVICES, AND ANTENNA DUPLEXERS, MODULES, AND COMMUNICATION DEVICES USING SAME

Номер: US20160006410A1

Автор: Hamaoka Yosuke, Miyanari Mitsunori, NAKAMURA Hiroyuki, Nakanishi Hidekazu, Yamaji Toru

Принадлежит:

An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate. 1. An elastic wave device comprising:a substrate including a single crystal piezoelectric material;an interdigital transducer (IDT) electrode provided on an upper surface of the substrate;a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode;a dielectric film disposed over the upper surface of the substrate in a first region, and disposed over and covering the first wiring electrode in a second region, the dielectric film being disposed such that it does not extend over and cover the first wiring electrode in a first region, the first wiring electrode including a cutout in the second region; anda second wiring electrode disposed over and covering an upper surface of the first wiring electrode in the first region, and disposed over and covering an upper surface of the dielectric film in the second region above the substrate.2. The elastic wave device of wherein a thickness of a first portion of the dielectric film disposed over the first wiring electrode in the second region is less than a thickness of a second portion of the dielectric film covering an upper surface of the substrate.3. The elastic wave device of wherein the thickness of the first portion of the dielectric film is less than a thickness of the second wiring electrode.4. The elastic wave device ...

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Номер записи: 97

07-01-2016 дата публикации

TUNING FORK AND ELECTRONIC DEVICE USING THE SAME

Номер: US20160006411A1

Автор: Han Won, KIM Sung Wook

Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A tuning fork may include a vibrating part in which a plurality of vibrating members having vibrating heads which are formed at free ends of tines are connected at both sides of a connection member, and a support part in which the vibrating part is coupled with the connection member. The vibrating part may include two tines formed in parallel with each other and the connection member formed in a direction to the free end of the tines from fixed ends of the tines, being spaced apart from each other by a predetermined distance, and connecting between the two tines. 1. A tuning fork , comprising:a vibrating part comprising a plurality of vibrating members having vibrating heads which are formed at free ends of tines, the vibrating members connected at both sides of a connection member; anda support part coupled with the connection member.2. The tuning fork according to claim 1 , wherein the vibrating part includes:the parallel tines having the free ends and fixed ends; andthe connection member adjacently positioned to the fixed ends of the tines and connecting between the tines.3. The tuning fork according to claim 1 , wherein the vibrating part has an H shape.4. The tuning fork according to claim 1 , wherein the support part includes a base claim 1 , a central member connecting a central portion of the base to a central portion of the connection member claim 1 , and support arms formed at both ends of the base in parallel with the tines.5. The tuning fork according to claim 1 , wherein a distance from the fixed ends of the tines to the connection member is 0.02 to 0.2 times of a length of the vibrating members.6. The tuning fork according to claim 1 , wherein a width of the connection member is 0.5 to 1.5 times of a width of the tines.7. The tuning fork according to claim 1 , wherein a curved chamfer is formed between the connection member and the tines.8. The tuning fork according to claim 7 , wherein the chamfer is formed at an upper portion of the connection member ...

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Номер записи: 98

02-01-2020 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

Номер: US20200006200A1

Автор: HASHIMOTO Nobuaki, Ito Haruki

Принадлежит:

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a semiconductor substrate including a first face and a second face on a side opposite to the first face;a foundation layer formed on the first face of the semiconductor substrate;a first electrode formed on the foundation layer;a second electrode formed on the foundation layer;an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face of the semiconductor substrate, and the integrated circuit being electrically connected to the first electrode and the second electrode;a groove portion formed through the semiconductor substrate;an insulating film formed on a side wall of the groove portion;a conductive portion formed inside the groove portion on the insulating film and electrically connected to the second electrode;a first insulation layer formed on the foundation layer;a first interconnection formed on the first insulation layer, the first interconnection being electrically connected to the first electrode;a second insulation layer formed on the first interconnection and the first insulation layer;a second interconnection formed on the second insulation layer, the second interconnection being electrically connected to the first interconnection; anda third insulation layer formed on the second interconnection and the second insulation layer; ...

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Номер записи: 99

04-01-2018 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20180006628A1

Автор: Burgener Mark L., Cable James S.

Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. A filter module for providing a pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA); anda capacitor module coupled in parallel to the AWR, the capacitor module configured to modify the transduction of the electrical signal by the AWR.2. A filter module for providing a tunable pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA);a first capacitor module coupled in parallel to the AWR, the first capacitor module configured to modify the transduction of the electrical signal by the AWR; anda second capacitor module coupled in series to the AWR and the first capacitor module, the second capacitor module configured to modify the transduction of the electrical signal by the AWR.3. The filter module of claim 1 , wherein the capacitor modifies at least one of the AFA and RFA.4. The filter module of claim 2 , wherein the first capacitor module or the second capacitor module or a combination thereof modifies at least one of the RFA and AFA.5. The filter module of claim 1 , wherein the capacitor module is a variable capacitor.6. The filter module of claim 2 , wherein at least one of the first capacitor module and the second capacitor module are variable capacitors.7. A filter module for providing a switchable pass-band and a tunable rejection band claim 2 , the filter module comprising:an acoustic wave resonator (AWR), the AWR having a ...

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Номер записи: 100