Oscillation circuit for monolithic integration in electronic circuit

The oscillation circuit includes an oscillation body (S) of a semiconductor material secured to the surface of a semiconductor substrate (1). The oscillation body is provided with a first electrode (E1). A second electrode (E2) is provided opposite of the first electrode. A DC voltage with a superimposed AC component is applied across the electrodes for stimulating the mechanical oscillation of the oscillation body. Preferably, the oscillation body consists of a flexure beam secured to the semiconductor substrate at one end.

Piezoelectric unit and device

A piezoelectric device comprising a casing and a piezoelectric unit 9, 10 supported in the casing, preferably with the use of a direction- oriented electroconductive pliable sheet 13, 14. The piezoelectric unit has a plate shape with electrodes laminated on its opposite surfaces. The electrode provided on one surface of the piezoelectric unit extends on to a peripheral portion of the opposite surface, spaced from the electrode(s) thereon, for gathering all the electrode connections on the opposite surface. Support members, which may be conductive, or non-conductive with electrodes thereon, connect the piezoelectric unit electrodes to external terminal legs. ...

An oscillator

A filter circuit

Filter circuit with neutralised stray capacitance of a piezo-crystal

Chip-type piezoelectric filter and filter circuit using such piezoelectric filter

DUPLEXER AND ISOLATION PROCEDURE FOR RX-BAND AND TX-BAND

Elektrostriktiver Schwinger

Vorrichtung mit zwei Piezokristallen, insbesondere für ein Kristallfilter

Frequenzempfindliches Bauelement in Gestalt eines einen piezoelektrischen Schwingkörper enthaltenden n-Poles in einer H.F.-Einrichtung

Electric vibrator

Media devices for piezoelectric crystals

DUAL MODE FILTER

PURPOSE: A dual mode filter is provided in which undesired vibrations due to interference between vibrators are prevented from occurring, and which has greatly reduced manufacturing costs and has greatly increased connection reliability. CONSTITUTION: A dual mode filter comprises a casing substrate(1) having an input electrode, an output electrode, two ground electrodes, and a relay electrode provided thereon, and a first and a second filter element(10,20) mounted on the casing substrate. And a cap(40) is connected and fixed on the casing substrate so as to cover the first and second filter elements. Each of the first and second filter elements includes a first terminal electrode provided at a first end of a first principal surface of a piezoelectric substrate, a second terminal electrode provided in a central portion of the piezoelectric substrate, a pair of segmented electrodes provided in a portion between the first and second terminal electrodes and which are connected to the first ...

FILTER FOR USING BY BULK ACOUSTIC WAVE RESONATOR

Piezoelectric ladder filter with series resonators having a pair of grooves and method of forming same

A ladder-type piezoelectric filter includes series resonators including substantially rectangular piezoelectric resonators adapted to vibrate in a longitudinal vibration mode, and parallel resonators including substantially square piezoelectric resonators adapted to vibrate in a square vibration mode. The series resonators and the parallel resonators are connected to each other via terminals so as to define a ladder circuit. A pair of grooves are respectively provided on one of the major surfaces of each series resonator at symmetrical positions with respect to the center-line which is substantially perpendicular to the longitudinal direction of the series resonator such that the pair of grooves extend in a direction that is substantially parallel to the center-line of the series resonator and divide the electrode on the one major surface to thereby adjust an electric capacitance between the pair of electrodes respectively disposed on the pair of major surfaces of the series resonator.

Elektromechanisches Filter

Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwith

The band-pass filter (100) has a lower film bulk acoustic resonator, FBAR, (110), an upper FBAR (120) stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler (130) comprising a layer (131) of acoustic decoupling material. Each of the FBARs has opposed planar electrodes (112, 114) and a piezoelectric element (116) between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

Film bulk acoustic resonator (fbar) devices with simplified packaging

The encapsulated film bulk acoustic resonator, FBAR, device (100) comprises a substrate (102), an FBAR stack (111) over the substrate, an element (104) for acoustically isolating the FBAR stack from the substrate, encapsulant (121) covering the FBAR stack, and an acoustic Bragg reflector (190) between the top surface (113) of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR (110) and has a top surface (113) remote from the substrate. The FBAR comprises opposed planar electrodes (112, 114) and a piezoelectric element (116) between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer (192) and a plastic Bragg layer (194) juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device ...

Improvements in or relating to piezo-electric elements

... 739,632. Piezo-electric elements. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Feb. 9, 1954 [Feb. 12, 1953], No. 3863/54. Class 40 (8). A piezo-electric element comprises one or more electroded plates of polycrystalline piezoelectric material, e.g. barium titanate or zirconate, totally enclosed by an adhering layer of a thermally-hardening synthetic resin. The element shown comprises two electroded plates soldered together at 4. The adhering layer 6 is preferably less than 0.2 mm. thick and may be made of a mixture of urea- or melamineformaldehyde resins and alkyd resins together with an alcohol, e.g. butanol. Such a layer may be applied at a temperature of below 150‹C. The Specification states that polarizing fields of up to 60 kv/cm. may be applied without leakage to elements provided with layers according to the invention.

Piezoelectric resonator insensitive to acceleration - has pair of elements which rotate in opposite directions

Film bulk acoustic resonator (FBAR) devices with simplified packaging

The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic ...

ACOUSTIC WAVE RESONATOR AND FILTER INCLUDING THE SAME

An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

Eine akustische Resonatorvorrichtung

Die vorliegende Offenbarung stellt unter anderem eine akustische Resonatorvorrichtung bereit. Ein Beispiel für die offenbarte akustische Resonatorvorrichtung weist auf ein Substrat mit einer Trägerschicht, einer ersten Schicht, die über der Trägerschicht angeordnet ist, und einer piezoelektrischen Schicht, die über der ersten Schicht angeordnet ist. Es ist auch offenbart, dass die akustische Resonatorvorrichtung ein ineinandergreifendes Metall beinhaltet, welches über der piezoelektrischen Schicht angeordnet ist, wobei das ineinandergreifende Metall konfiguriert ist, akustische Wellen innerhalb eines akustisch aktiven Bereichs zu erzeugen. Es ist ferner offenbart, dass die akustische Resonatorvorrichtung eine akustische Wellenstreustruktur beinhaltet.

Piezoelektrisches Filter

Piezoelektrischer Filter

Ein piezoelektrischer Filter umfasst einen ersten dreipoligen Filter mit einem ersten Eingangsteil und einem ersten Ausgangsteil, einen zweiten dreipoligen Filter, welcher ein mit dem ersten Ausgangsteil verbundenes zweites Eingangsteil und ein zweites Ausgangsteil aufweist, ein Messteil, eine zwischen dem ersten Ausgangsteil, dem zweiten Eingangsteil und dem Masseteil angeschlossene Massekapazität und eine zwischen dem ersten oder zweiten Eingangsteil und dem ersten oder zweiten Ausgangsteil angeschlossene zusätzliche Kapazität.

Solidly mounted stacked bulk acoustic resonator

The film bulk acoustic resonator, FBAR, device (100) comprises a substrate (102), an acoustic Bragg reflector (180) over the substrate, a piezoelectric element (116) over the acoustic Bragg reflector, and a remote-side electrode (114) over the piezo-electric element. The acoustic Bragg reflector comprises a metal Bragg layer (182) juxtaposed with a plastic Bragg layer (184). The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.

Filter circuit

PIEZOELECTRIC BI-RESONATEUR

Elektromechanisches Filter

Solidly mounted stacked bulk acoustic resonator

Pass bandwidth control in decoupled stacked bulk acoustic resonator devices

Improvements in or relating to piezo electric units

... 678,825. Piezo-electric crystals. GENERAL ELECTRIC CO., Ltd., and STEVENSON, S. A. April 13, 1951 [April 14, 1950], No. 9242/50. Class 40 (viii). A piezo-electric unit comprises three or more plates 1 and 2 bonded together to form two plane parallel layers, each layer having the same width and thickness as a single plate, and the two layers being arranged so that joins along the length of each are never situated opposite joins in the other. In the arrangement shown, this is effected by using plates 1 all of the same length, and two plates 2 of half length, are disposed in each layer and at the opposite ends of the unit. The layers are bonded by cement 3, which may be conducting and form one of the electrodes of the unit. The remaining electrodes are formed by layers 9 on the outer surfaces of the layers. A spot 4 of conducting cement on the side of the unit connects the layer 3 to a terminal wire 5, while terminal wires 7 are connected to electrodes 9. Specification 661,690 is referred ...

ACOUSTIC VOLUME WAVE FILTER

A device with two piezoelectric crystals

BI-RESONATEUR PIEZOELECTRIQUE

BI-RESONATEUR PIEZOELECTRIQUE A ELECTRODES NON ADHERENTES AU CRISTAL. LE BI-RESONATEUR COMPREND AU MOINS DES PREMIER ET DEUXIEME PLATEAUX 1, 2 EN MATERIAU DIELECTRIQUE SUR LESQUELS SONT DISPOSEES RESPECTIVEMENT DES PREMIERE ET DEUXIEME ELECTRODES 11, 21. LE BI-RESONATEUR COMPREND EN OUTRE UN TROISIEME PLATEAU 3 EN MATERIAU DIELECTRIQUE AYANT DES FACES OPPOSEES RESPECTIVEMENT AUX PREMIER ET DEUXIEME PLATEAUX SUR LESQUELLES SONT DEPOSEES RESPECTIVEMENT DES TROISIEME ET QUATRIEME ELECTRODES 31, 32 RELIEES ENTRE ELLES. LE CORPS PIEZOELECTRIQUE EST CONSTITUE PAR DEUX PASTILLES PIEZOELECTRIQUES EN QUARTZ 4, 5, INDEPENDANTES ET SEMBLABLES, DONT L'UNE EST INTERPOSEE ENTRE LESDITES PREMIERE ET TROISIEME ELECTRODES, SANS CONTACT AVEC CELLES-CI, ET L'AUTRE EST INTERPOSEE ENTRE LES DEUXIEME ET QUATRIEME ELECTRODES SANS CONTACT AVEC CELLES-CI, LES PASTILLES PIEZOELECTRIQUES EN QUARTZ ETANT DISPOSEES DE TELLE SORTE QUE LEURS AXES Y SOIENT OPPOSES. APPLICATION AUX OSCILLATEURS CONSTITUANT DES REFERENCES ...

ACOUSTIC RESONATOR DEVICE

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

Piezo-electric device

Akustische Filmvolumenresonator-Vorrichtungen (FBAR-Vorrichtungen) mit vereinfachtem Gehäuseeinbau

Eine eingekapselte akustische Filmvolumenresonator-Vorrichtung, FBAR-Vorrichtung, (100), die folgende Merkmale aufweist: ein Substrat (102); einen FBAR-Stapel (111) über dem Substrat (102), wobei der FBAR-Stapel (111) einen FBAR (110) umfasst und eine dem Substrat (102) ferne obere Oberfläche aufweist, wobei der FBAR (110) gegenüberliegende planare Elektroden (112, 114) und ein piezoelektrisches Element (116) zwischen den Elektroden (112, 114) aufweist; eine Einrichtung (104) zum akustischen Isolieren des FBAR-Stapels (111) von dem Substrat (102); ein Kapselungsmittel (121), das den FBAR-Stapel (111) bedeckt; und einen akustischen Bragg-Reflektor (190) zwischen der oberen Oberfläche des FBAR-Stapels (111) und dem Kapselungsmittel (121), wobei der akustische Bragg-Reflektor (190) eine metallische Bragg-Schicht (192) und eine zu der metallischen Bragg-Schicht (192) benachbarte Kunststoff-Bragg-Schicht (194) umfasst, wobei die FBAR-Vorrichtung (100) eine Bandpasscharakteristik aufweist, die ...

Chip-type piezoelectric filter and filter circuit using such piezoelectric filter

Pass bandwidth control in decoupled stacked bulk acoustic resonator devices

A crystal oscillator with low acceleration sensitivity

Cantilever-mounted resonators are compact and low-profile but suffer high sensitivity to acceleration in the direction of the cantilever. To overcome this sensitivity an oscillator is arranged to use two beam resonators 42,44 mounted in opposite directions so that the acceleration sensitivities of the resonators cancel each other. The resonators may be electrically connected in parallel in the oscillator circuit (figure 5). The resonators may be BAW (Bulk Acoustic Wave) or SAW (Surface Acoustic Wave) piezoelectric crystals or MEMS (Micro Electro-Mechanical System) devices. The resonators may be mounted in separate housings (figure 7) or may be located at opposite ends of a single centre-mounted beam (figure 8).

CRYSTAL FILTER ASSEMBLY

Process and piezoelectric filtering device

BULK ACOUSTIC WAVE FILTER

An embodiment of the present invention relates to a bulk elastic wave filter. The bulk elastic wave filter includes a first resonation unit including a bulk acoustic resonator connected between a signal port for transmission and reception of signals and a node connected to an antenna port; and a second resonation unit including a bulk acoustic resonator connected to the signal port and the ground, and a quality factor (QF) value of the bulk acoustic resonator included in the first resonance unit is smaller than a QF of the bulk acoustic resonator included in the second resonance unit. Accordingly, ripples generated in an output can be reduced and a bandwidth of the filter can be widened. COPYRIGHT KIPO 2016 ...

Method of making an electronic component

An electronic component has a substantially reduced size and is adapted to be produced at low costs without variation in superior quality of the component because of the ease of achieving electrical connection between a piezoelectric element and a electrode pattern on a substrate supporting the piezoelectric element. The piezoelectric element has a lower electrode formed on the lower surface thereof and an upper electrode formed on the upper surface thereof. The piezoelectric element is fixed to the substrate such that the lower electrode is bonded to an electrode provided on the substrate by a conductive adhesive. A conductive wire is fixed to the upper electrode of the piezoelectric element. A metallic cap is bonded to the substrate so as to cover and seal the piezoelectric element on the substrate. The cap is contacted at its inner surface by the wire, whereby an electrical connection is achieved between the cap and the upper electrode of the piezoelectric element. Input and output lead ...

Monolitic band-pass filter using piezoelectric cantilevers

The device is made by growing thin-film layers of materials on a silicon strate. These layers are then removed selectively by photolitographic masking and etching, to produce a pattern which is a series of cantilever plates which are piezoelectrically coupled. An electrical signal connected to a first pattern of piezoelectric material will cause the associated plate to deflect. A second piezoelectric pattern on each plate will generate an electrical signal due to the strain caused by deflection of the plate, and this signal is transferred to a first piezoelectric pattern on the next plate, and so on down to the last plate where the signal is extracted.

Acceleration and temperature compensated piezoelectric bi-resonator

A piezoelectric bi-resonator with electrodes not adhering to the crystal, comprising at least first and second plates in dielectric material on which plates are deposited respectively first and second electrodes, a third plate in dielectric material having faces opposed to the first and second plates respectively, on which faces are respectively deposited third and fourth electrodes, connected together, and a piezoelectric body constituted by two piezoelectric chips made of quartz, independent and similar, one of which is interposed between the said first and third electrodes, without contact therewith, and the other is interposed between the second and fourth electrodes without contact therewith, the said piezoelectric quartz chips being arranged so that their axes Y' are opposite.

Electromechanical filter

CRYSTAL RESONATOR

The invention relates to a resonator (1) with at least one crystal (2, 2'), at least two electrodes (3, 3', 4, 4') exciting said crystal (2, 2') and a sandwiched housing (5, 5') with a substantially disc-shaped bottom (6), at least one framelike central portion (7, 7'), which surrounds the crystal (2, 2') and supports it in pendular fashion and a substantially disc-shape lid (8), wherein these housing sections (6, 7, 7', 8) are interconnected by means of sealing surfaces (13, 14, 15, 16) and inclusion of conductive layers (9 and 9', 10 and 10'; 11, 12), and each electrode (3, 4; 3', 4') is connected to conductive layers (9 and 9', 10 and 10'; 11, 12). The inventive resonator is so embodied that it can be further processed using SMD technology. This is done in that at least two conductive surfaces (17, 18, 19, 20) extend on at least one side of the housing (5, 5') to the foot (21) of the bottom (6) in such a way that said bottom can be soldered to a printed circuit (22), wherein each of ...

Elektronische Bauteilvorrichtung

Improvements in or relating to electrical vibrators

... 1,014,923. Tuning forks. TOKO RADIO COIL KENKYUSHO KABUSHIKI KAISHA. Sept. 10, 1962 [Sept. 8, 1961], No. 34549/62. Heading G5J. [Also in Division H2] A tuning fork comprises a pair of flexure-type piezoelectric vibrators (see Division H2), secured to a base D. Each vibrator consists of two elements A, B, separated by spacers to prevent friction between them.

Filter using tuning fork crystals

A filter comprises miniature crystal tuning fork oscillators H, I to provide low frequency and narrow band characteristics and uses an operational amplifier G to neutralise stray capacitance. The tuning fork crystals may include two identical crystals in parallel to reduce series resistance and increase bandwidth. Crystals with slightly differing resonant frequencies may also be used to widen the bandwidth. A suggested application for the filter is in a system sending data over a noisy network such as a domestic electricity supply circuit.

Pass bandwidth control in decoupled stacked bulk acoustic resonator devices

The decoupled stacked bulk acoustic resonator DSBAR device (100) has a lower film bulk acoustic resonator FBAR, (110), an upper FBAR (120) stacked on the lower FBAR, and an acoustic decoupler (130) between the FBARs. Each of the FBARs has opposed planar electrodes (112, 114) and a piezoelectric element (116) between the electrodes. The acoustic decoupler has acoustic decoupling layers (182, 183) of acoustic decoupling materials having different acoustic impedances. The acoustic impedances and thicknesses of the acoustic decoupling layers determine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device. Process-compatible acoustic decoupling materials can then be used to make acoustic decouplers with acoustic impedances and pass bandwidths that are not otherwise obtainable due to the lack of process-compatible acoustic decoupling materials with such acoustic impedances.

Improvements in piezo-electric crystal vibrators

... 611,738. Compound sheet materials. SMITH, B. S., PRATT, E. W., and WRIGHT, C. S. Dec. 19, 1945, No. 34416. [Class 140] [Also in Groups XXXIX and XL(c)] In a piezo-electric crystal vibrator consisting of crystal plates s adhesively secured between metal plates, each adhesive joint embodies a grid of soft metal wires or other filaments so as to ensure a predetermined thickness of the adhesive layer when the parts are pressed together. The invention is described as applied to a sub-aqueous compressional wave sender and receiver as in Specification 611,739, [Group XL(c)], in which it is required to stick quartz plates to a steel plate b<1>. The parts are cleaned with methylated spirit and while heated are coated with a solution of a polyvinyl acetal resin in methylated spirit. A ring plate i carrying a grid j of fine copper wires or plastic filaments is laid on the adhesive coating, and the whole is heated to drive off the solvent and to bind the adhesive to the steel. When the plate has cooled ...

Filter device

Électrostrictif oscillator of torsion

Piezoelectric oscillator and its application like filter electromechanical

Microelectromechanical filter formed from parallel-connected lattice networks of contour-mode resonators

A microelectromechanical (MEM) filter is disclosed which has a plurality of lattice networks formed on a substrate and electrically connected together in parallel. Each lattice network has a series resonant frequency and a shunt resonant frequency provided by one or more contour-mode resonators in the lattice network. Different types of contour-mode resonators including single input, single output resonators, differential resonators, balun resonators, and ring resonators can be used in MEM filter. The MEM filter can have a center frequency in the range of 10 MHz-10 GHz, with a filter bandwidth of up to about 1% when all of the lattice networks have the same series resonant frequency and the same shunt resonant frequency. The filter bandwidth can be increased up to about 5% by using unique series and shunt resonant frequencies for the lattice networks.

Multilayer type piezoelectric filter

A multilayer type piezoelectric filter (F) is provided which includes at least two chambers (6a, 6b or 6b, 6c) for receiving therewithin resonators (S, P or P, S), respectively. The chambers (6a, 6b or 6b, 6c) are partly defined by a top printed circuit board (4) and an intermediate printed circuit board (3a or 3b). The top printed circuit board (4) and the intermediate printed circuit board (3a or 3b) are formed with communication holes (20, 21a or 21b) for communicating the chambers (6a, 6b or 6b, 6c) with the outside.

Durchlassbandbreitensteuerung in entkoppelten gestapelten akustischen Volumenresonatorvorrichtungen

Eine entkoppelte, gestapelte, akustische Volumenresonator- (DSBAR-) Vorrichtung mit folgenden Merkmalen: einem unteren akustischen Filmvolumenresonator (FBAR) und einem oberen FBAR, der auf den unteren FBAR gestapelt ist, wobei jeder FBAR gegenüberliegende planare Elektroden und ein piezoelektrisches Element zwischen den Elektroden aufweist; und einem akustischen Entkoppler zwischen den FBARs, wobei der akustische Entkoppler akustische Entkopplungsschichten aus akustischen Entkopplungsmaterialien mit unterschiedlichen akustischen Impedanzen aufweist.

Bulk accoustic wave filter

Film bulk acoustic resonator (fbar) devices with simplified packaging

Temperature-compensated film bulk acoustic resonator (fbar) devices

A filter circuit

Film acoustically-coupled transformer

Electro-mechanical filters

... 865,093. Electromechanical filters. TOYO TSUSHINKI KABUSHIKI KAISHA. April 18, 1957 [April 23, 1956 (3); Feb., 26, 1957], No. 12759/57. Class 40(8) An electromechanical filter has piezo-electric quartz crystal transducers and mechanical resonators also made of quartz crystal. In the filters of Figs. 1(a) and 1(b) the transducers 1, resonators 2 and coupling members 3 are formed from a single block of quartz. The filter is supported by leads 5 soldered to the electrodes of the transducers. These filters are stated to be of the constant-K type and their electrical analogues are discussed in the Specification. It is stated that the transducers may vibrate in a bending torsional, thickness or lateral mode. The transducers in the embodiment of Fig. 3b vibrate in a longitudinal extensional mode as indicated by the arrows. The transducers are joined by a main coupling rod 10 of length equal to four half-wavelengths, this rod being coupled at intervals of one half-wavelength to three-elongated ...

CRYSTAL-CONTROLLED CIRCUITS

COMBINATION OF PIEZOELECTRIC RESONATORS

PIEZOELECTRIC BI-RESONATEUR

ESTRUTURA DE FILTRO A CRISTAL, DO TIPO POLILITICO

Akustische Filmvolumenresonator-Vorrichtungen (FBAR-Vorrichtungen) ohne Hohlraum

Eine akustische Filmvolumenresonator-Vorrichtung (FBAR-Vorrichtung) (100, 200), die folgende Merkmale aufweist: ein Substrat (102); einen akustischen Bragg-Reflektor (180, 280) über dem Substrat (102), wobei der akustische Bragg-Reflektor (180, 280) eine metallische Bragg-Schicht (182, 282) und eine zu der metallischen Bragg-Schicht (182, 282) benachbarte Kunststoff-Bragg-Schicht (184) umfasst; ein piezoelektrisches Element (116, 216) über dem akustischen Bragg-Reflektor (180, 280); und eine fernseitige Elektrode (114, 214) über dem piezoelektrischen Element (116, 216), wobei die FBAR-Vorrichtung (100) eine Bandpasscharakteristik aufweist, die eine Mittenfrequenz aufweist, wobei zumindest eine der Bragg-Schichten (182, 184, 186, 188) eine nominelle Dicke aufweist, die gleich einem Viertel der Wellenlänge in dem Material der jeweiligen Bragg-Schicht eines akustischen Signals ist, dessen Frequenz gleich der Mittenfrequenz ist, und wobei die metallische Bragg-Schicht (182, 186) dünner ist ...

Entkoppeltes, gestapeltes, akustisches Volumenresonator-Bandpassfilter mit steuerbarer Durchlassbandbreite

Ein Bandpassfilter, das folgende Merkmale aufweist: einen unteren akustischen Filmvolumenresonator (FBAR), einen oberen FBAR, der auf den unteren FBAR gestapelt ist, wobei jeder FBAR gegenüberliegende planare Elektroden und ein piezoelektrisches Element zwischen den Elektroden aufweist; und einen akustischen Entkoppler zwischen den FBARs, der eine Schicht aus einem akustischen Entkopplungsmaterial aufweist.

Film bulk acoustic resonator (fbar) devices with simplified packaging

Film acoustically-coupled transformer

One embodiment (100) of the film acoustically-coupled transformer, FACT, has a decoupled stacked bulk acoustic resonator, DSBAR, having a lower film bulk acoustic resonator, FBAR, (110), an upper FBAR (120) stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler (130) comprising a layer (131) of acoustic decoupling material. Each FBAR has opposed planar electrodes (112, 114) with a piezoelectric element (116) between them. The FACT additionally has first terminals (132, 134) electrically connected to the electrodes of one FBAR and second terminals (136, 138) electrically connected to the electrodes of the other FBAR. Another embodiment (200) has decoupled stacked bulk acoustic resonators, DSBARs, (106, 108), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can link single-ended circuitry with balanced circuitry or vice versa and ...

Improvements in or relating to piezo-electric crystal networks or circuit arrangements

... 940,064. Oscillator circuits. TELEFUNKEN G.m.b.H. April 24, 1959 [April 25, 1958], No. 14038/59. Heading H3F. [Also in Division H1] A microwave oscillator arrangement incorporating a frequency stabilizing unit comprises an amplifier 10 having its input and output connected to the corresponding terminals of a branched hollow conductor system forming a bridge circuit, three arms of which terminate in absorption elements and the fourth arm 6 is provided with a piezo-electric body 1. At a natural frequency of the body 1 the bridge is unbalanced and energy flows from input to output and oscillations are produced. Various constructions of hollow conductors and piezoelectric bodies are described.

Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwith

Crystal resonator

ACCELERATION RESISTANT COMBINATION OF OPPOSITE-HANDED PIEZOELECTRIC CRYSTALS

Piezoelectric wave filter

Composite resonator

COMBINAISON DE RESONATEURS PIEZO-ELECTRIQUES

... 1RESONATEUR INSENSIBLE AUX ACCELERATIONS. 2ENSEMBLE DE RESONATEURS COMPORTANT DEUX RESONATEURS PIEZO-ELECTRIQUES DONT LES CRISTAUX 5 ET 6 SONT RESPECTIVEMENT DEXTROGYRE ET LEVOGYRE ET ORIENTES DANS L'ESPACE DE MANIERE A CE QUE LES TROIS AXES CRISTALLOGRAPHIQUES DU CRISTAL 5 SOIENT OPPOSES AUX AXES CRISTALLOGRAPHIQUES CORRESPONDANTS DU CRISTAL 6. 3OSCILLATEURS ELECTRIQUES A TRES GRANDE STABILITE DE FREQUENCE. GUIDAGE DE VEHICULES AERONAUTIQUES OU SPATIAUX, TRAJECTOGRAPHIE A L'HORLOGE.

CIRCUIT OF FILTERING BAND PASS EQUIPS WITH ACOUSTIC RESONATORS

Un circuit de filtrage passe-bande basé sur un quadripôle comportant : - une branche série comportant un premier résonateur acoustique (120) présentant une fréquence de résonance et une fréquence d'antirésonance et monté en série avec un premier condensateur (110) ; - une branche parallèle comportant un second résonateur acoustique (130) résultant du même procédé de fabrication que ledit premier résonateur et monté en parallèle avec un second condensateur (140) de valeur identique audit premier condensateur (110). Le circuit de filtrage est particulièrement adapté à la réalisation de circuit de filtrage intégrés pour la téléphonie mobile.

필터 장치

... 회로 구성의 간략화, 소형화 및 저손실화를 도모할 수 있는 필터 장치를 제공한다. 로패스 필터(4)와 하이패스 필터(5)가 직렬로 접속되어 있다. 로패스 필터(4)가 공진 주파수 및 반공진 주파수를 갖는 제1 음향 공진자(11a~11c)와, 신호 라인과 그라운드 전위 사이에 접속된 제1 인덕터(12a, 12b)와, 제1 용량 소자(13a, 13b)를 갖는다. 하이패스 필터(5)가 제2 인덕터(21a, 21b)와, 제2 용량 소자(22a, 22b)와, 제2 음향 공진자(23a~23c)를 갖는다. 통과 대역의 저영역 측에 제1 음향 공진자(11a~11c)의 반공진 주파수에 의한 제1 감쇠역(f1)이 마련되어 있다. 통과 대역의 고영역 측에 제2 음향 공진자(23a~23c)의 공진 주파수에 의한 제2 감쇠역이 마련되어 있다. 제1 감쇠역(f1)보다 저주파수 측에 LC 공진 회로에 의한 제3 감쇠역이 마련되어 있으며, 제2 감쇠역보다 고영역 측에 다른 LC 공진 회로에 의한 제4 감쇠역이 마련되어 있다.

CHIP-TYPE PIEZOELECTRIC FILTER AND FILTER CIRCUIT USING THE SAME

PROBLEM TO BE SOLVED: To provide a multi-functional type filter that has a simple construction and is suitable for mass production. SOLUTION: This filter consists of a laminated body, equipped with plural piezoelectric substrates 2x and 2y having oscillation parts 3x, 4x, 4y and 4y which have frequency response characteristics different from one another. On the outer surface of the laminated body, plural connection terminal parts 25x, 26x, 25y, 26y and 27, which are connected to the oscillation parts 3x, 4x, 3y and 4y of each piezoelectric substrates 2x and 2y, are formed. Moreover, each oscillation part can be used selectively. COPYRIGHT: (C)1999,JPO ...

Improvements in or relating to electromechanical filters

... 1,028,492. Electromechanical filters. SIEMENS & HALSKE A.G. Feb. 8, 1963 [Feb. 9, 1962], No. 5146/63. Heading H3U. In order to improve mechanical strength, the coupler between two mechanical oscillators has an enlarged central portion. The filter shown consists of a single plate of quartz divided by slits 4 into two similar oscillators 1, 2 and a coupler 3. Enlargement of the central region of the coupler enables its length l to be increased whereby the degree of coupling is reduced without loss of mechanical strength. The resonant frequency of the coupler is preferably made higher than that of the oscillators 1, 2. The oscillators are provided with electrodes on their major faces and operate in a transverse extensional mode. The invention may also be applied to filters operating in longitudinal extensional and flexural modes.

Temperature-compensated film bulk acoustic resonator (fbar) devices

The temperature-compensated film bulk acoustic resonator, FBAR, device (100) comprises an FBAR stack (111). The FBAR stack comprises an FBAR (110) and a temperature-compensating element (109). The FBAR is characterized by a resonant frequency having a temperature coefficient, and comprises opposed planar electrodes (112, 114) and a piezoelectric element (116) between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency depends at least in part. The temperature compensating element has a temperature coefficient opposite in sign to the temperature coefficient of the piezoelectric element.

Composite Resonator

... 1,187,441. Electromechanical filters. CLEVITE CORP. 30 March, 1967 [14 April, 1966], No. 14695/67. Heading H3U. [Also in Division H1] A filter comprises one or more piezoelectric elements (see Division H1) mounted upon a wafer whereby the resonant frequency of the combination in a thickness mode is determined by the thickness of the combination. As shown, three resonators A, B, C are arranged on a single wafer 24 and interconnected so as to provide a T-section filter having parallel resonant circuits in shunt and series arms. Each resonator comprises electrodes 28, 30 and a layer 26 of piezoelectric material, e.g. cadmium sulphide. The wafer 24 is made of a high-Q material e.g. a metal or a slice of AT-cut quartz. Each resonator operates at a frequency which is an integral multiple of a resonant frequency f a determined by the combined thickness of the active element and the underlying wafer. The surrounding inactive region is characterized by a resonant frequency fb and the thickness of ...

Improvements in or relating to piezo-electric devices comprising first and second piezo-electric elements

... 1,073,600. Piezoelectric element mountings. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Dec. 21, 1965 [Dec. 24, 1964], No. 54083/65. Heading H1E. A piezo-electric device, e.g. a filter, comprises two elements, e.g. thickness-shear, quartz resonators 1, 3, arranged in a common mount, the mount comprising two resilient, forked supports 9, 11 each having a pair of prongs 17, 19, respectively, each pair of prongs having slots 21 or 23 which accommodate the edge of a different one of the two elements. The elements may also be supported by a further forked support 43. The forks are mounted upon conductive pins 13, 15, 45 and are connected by conductive cement to electrode extensions 33, 35, 37, 39 on the elements 1, 3. The pins extend through the metal-rimmed, glass base 5, 7 of a sealable container.

Filter using tuning fork crystals

Piezoelectric resonator frequency adjustment method and piezoelectric resonator

Piezoelectric device

CRYSTAL RESONATOR

The invention relates to a resonator (1) with at least one crystal (2, 2'), at least two electrodes (3, 3', 4, 4') exciting said crystal (2, 2') and a sandwiched housing (5, 5') with a substantially disc-shaped bottom (6), at least one framelike central portion (7, 7'), which surrounds the crystal (2, 2') and supports it in pendular fashion and a substantially disc-shape lid (8), wherein these housing sections (6, 7, 7', 8) are interconnected by means of sealing surfaces (13, 14, 15, 16) and inclusion of conductive layers (9 and 9', 10 and 10'; 11, 12), and each electrode (3, 4; 3', 4') is connected to conductive layers (9 and 9', 10 and 10'; 11, 12). The inventive resonator is so embodied that it can be further processed using SMD technology. This is done in that at least two conductive surfaces (17, 18, 19, 20) extend on at least one side of the housing (5, 5') to the foot (21) of the bottom (6) in such a way that said bottom can be soldered to a printed circuit (22), wherein each of ...

RADIO FREQUENCY FRONT-END CIRCUIT AND COMMUNICATION DEVICE

A radio frequency front-end circuit includes a frequency variable filter connected to a select terminal of a switching circuit, and a filter connected to a select terminal of the switching circuit, the switching circuit including a switch that switches over conduction and non-conduction between a common terminal and the select terminal, the filter including a serial arm resonance circuit connected to the select terminal, a parallel arm resonator, and a frequency varying circuit that is a circuit including a capacitor and a switch connected in parallel to each other, and that is connected in series to the parallel arm resonator, wherein the frequency varying circuit shifts a frequency of the filter depending on conduction and non-conduction of the switch, and an on-resistance of the switch is smaller than an on-resistance of the switch.

Hochfrequenzfilter und Multiplexer

Hochfrequenzfilter (10) vom Abzweigtyp, umfassend mindestens einen Reihenarmresonator (s11 - s17), der in einem Pfad zwischen einem ersten Eingangs-/Ausgangs-Anschluss (m11) und einem zweiten Eingangs-/Ausgangs-Anschluss (m12) verbunden ist, mindestens zwei Parallelarmresonatoren (p11-p14), die jeweils zwischen einem Verbindungsknoten (n1, n2, n3, n4) in dem Pfad und einer Erde verbunden sind, und eine Induktivität (L1), die mit dem mindestens einen Reihenarmresonator (s11 - s17) in Reihe geschaltet ist, wobei die Induktivität (L1) näher an dem ersten Eingangs-/Ausgangs-Anschluss (m11) liegt als der mindestens eine Reihenarmresonator (s11 - s17) und die mindestens zwei Parallelarmresonatoren (p11 - p14), wobei von den mindestens zwei Parallelarmresonatoren ein erster Parallelarmresonator (p14), der dem zweiten Eingangs-/Ausgangs-Anschluss (m12) am nächsten verbunden ist, die höchste Antiresonanzfrequenz hat.

Multi-layer, selectable chip-type piezoelectric filter

The filter comprises a multilayer structure of a plurality of piezoelectric substrates 1x, 1y provided with oscillating sections 4x, 5x, 4y, 5y having different respective frequency response characteristics. A plurality of conduction terminals 34x, 35x, 34y, 35y, 36 are formed on the outer surface of the multilayer structure and connected to the related oscillating sections 4x, 5x, 4y, 5y of the piezoelectric substrate 1x, 1y so that the oscillating sections may be selectively used (see figs.8 and 10). This multi-functional chip-type piezoelectric filter has a simple configuration and is adapted to mass production.

Filter circuit with neutralised stray capacitance of a piezo-crystal

The present invention relates to a filter circuit and more particularly to an improved technique for arranging electronic components in a filter. The invention is a filter which uses one or more piezo-crystal devices (680) linked to a differential amplifier (500). The transfer function of the filter is tuned by the arrangement of capacitors, resistors, and inductors, between the signal input (640) and the positive input (540) and the negative input (520) of the amplifier (500), as well as by the arrangement of the resistors, capacitors, and inductors in the negative feedback path. The resistors, capacitors, and inductors to achieve a desired transfer function can be determined by calculation utilizing the transfer function equation. The stray capacitance neutralizing filter circuit can be used in a communication or signaling system.

CRYSTAL-CONTROLLED CIRCUITS

ACCELERATION RESISTANT COMBINATION OF OPPOSITE-HANDED PIEZOELECTRIC CRYSTALS

An acceleration resistant crystal features two crystals mounted together with at least two axes of each crystal being in antiparallel relationship with respect to corresponding axes of the other crystals. The two crystals can be chiral pairs and thus have three corresponding axes in antiparallel relationship for acceleration resistance in any arbitrary direction with respect to the crystal axes.

Acoustic wave device

An acoustic wave device includes resonator structures each including resonators arranged next to each other, and each of the resonator structures is excited in at least two vibration modes as the resonators thereof are coupled and resonate with each other. At least one of the resonator structures exhibits stronger resonance characteristics in one of the vibration modes than in the other vibration mode or modes within the filter band.

Bulk acoustic wave resonator and bulk acoustic wave filter and method of fabricating bulk acoustic wave resonator

A bulk acoustic wave (BAW) resonator includes a substrate, and two electrodes stacked on the substrate, and at least one piezoelectric layer interposed between the two electrodes. The two electrodes and the piezoelectric layer are at least partially overlapped with each other in a vertical projection direction, and one of the two electrodes has a plurality of openings.

Resonator device including electrode with buried temperature compensating layer

An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

Method of fabricating piezoelectric materials with opposite c-axis orientations

In accordance with a representative embodiment, a method, comprises: providing a substrate; forming a first piezoelectric layer having a compression-negative (C N ) polarity over the substrate; and forming a second piezoelectric layer having a compression-positive (C P ) over the substrate and adjacent to the first piezoelectric layer.

Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator

In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer

A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

RESONATOR, FREQUENCY FILTER, DUPLEXER, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING RESONATOR

A resonator according to the present invention includes a supporting substrate, a piezoelectric layer, a pair of excitation electrodes, and a bonding layer. The piezoelectric layer is made of a piezoelectric material. The pair of excitation electrodes is formed on the upper surface of the piezoelectric layer so as to excite bulk acoustic waves. The bonding layer has a cavity formed therein so as to face the excitation electrode pair through the piezoelectric layer, and the bonding layer bonds the supporting substrate to the lower surface of the piezoelectric layer. 1. A resonator , comprising:a supporting substrate;a piezoelectric layer made of a piezoelectric material;a pair of excitation electrodes that is formed on an upper surface of the piezoelectric layer, the pair of excitation electrodes being provided to excite bulk acoustic waves in the piezoelectric layer; anda bonding layer that has a cavity formed therein so as to face the pair of excitation electrodes through the piezoelectric layer, the bonding layer being provided to bond the supporting substrate to a lower surface of the piezoelectric layer.2. The resonator according to claim 1 , wherein the bulk acoustic waves are Lamb waves.3. The resonator according to claim 1 , wherein the bonding layer is made of an insulating material.4. The resonator according to claim 1 , wherein the pair of excitation electrodes is an IDT.5. A frequency filter claim 1 , comprising:a supporting substrate;a piezoelectric layer made of a piezoelectric material;a plurality of pairs of excitation electrodes that are formed on an upper surface of the piezoelectric layer, the plurality of pairs of excitation electrodes being provided to excite bulk acoustic waves in the piezoelectric layer; anda bonding layer that has a cavity formed therein so as to face each of the pairs of excitation electrodes through the piezoelectric layer, the bonding layer being provided to bond the supporting substrate to a lower surface of the ...

Acoustic wave device

An acoustic wave device includes: a piezoelectric film made of an aluminum nitride film containing a divalent element and a tetravalent element, or a divalent element and a pentavalent element; and an electrode that excites an acoustic wave propagating through the piezoelectric film.

Tuning bar piezoelectric vibrator and tuning fork piezoelectric vibrator

A tuning bar piezoelectric vibrator includes first and second leg portions defined by a tuning bar piezoelectric vibrator, layers of first and second inner driver electrodes arranged as inner driver electrodes between first and second piezoelectric layers that are polarized in opposite directions of a thickness direction, a first outer electrode and a second outer electrode arranged to face the first and the second inner driver electrodes with the piezoelectric layers in between, respectively, and first and second vibrator portions in which the inner driver electrodes are used as driver electrodes.

Acoustic structure comprising at least one resonator and at least one cointegrated capacitor in one and the same piezoelectric or ferroelectric layer

An acoustic structure, comprising at least one acoustic resonator exhibiting at least one resonant frequency in a band of operating frequencies and an integrated capacitor, further comprises: a stack of layers, comprising at least one active layer of piezoelectric material or of ferroelectric material; the resonator being frequency tunable and being produced by a first subset of layers of the stack comprising the at least one active layer and at least two electrodes; the integrated capacitor being produced by a second subset of layers comprising the active layer and at least two electrodes; the first and second subsets of layers being distinguished by a modification of layers so as to exhibit different resonant frequencies.

Lamb wave resonator and other type of acoustic wave resonator included in one or more filters

Aspects of this disclosure relate to acoustic wave filters that include a Lamb wave resonator and a second acoustic wave resonator that is a different type of acoustic wave resonator than the Lamb wave resonator. The different type of resonator can be a film bulk acoustic wave resonator for example. Some embodiments of this disclosure relate to an acoustic wave filter that includes the Lamb wave resonator and the second acoustic wave resonator. Some embodiments of this disclosure related to different respective acoustic wave filters including the Lamb wave resonator and the second acoustic wave resonator, in which the Lamb wave resonator and the second acoustic wave resonator are implemented on a common substrate.

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR PACKAGE AND METHOD

Acoustic resonator devices and filters are disclosed. An acoustic resonator chip includes a piezoelectric plate attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern formed on a surface of the piezoelectric plate includes interleaved fingers of an interdigital transducer on the diaphragm and a first plurality of contact pads. A second conductor pattern is formed on a surface of an interposer, the second conductor pattern including a second plurality of contact pads. Each pad of the first plurality of contact pads is directly connected to a respective pad of the second plurality of contact pads. A seal is formed between a perimeter of the piezoelectric plate and a perimeter of the interposer. 1. An acoustic resonator device comprising: a substrate;', 'a piezoelectric plate having front and back surfaces, the back surface attached to a front surface of the substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate; and', 'a first conductor pattern on the front surface of the piezoelectric plate, the first conductor pattern comprising an interdigitated transducer (IDT), interleaved fingers of the IDT on the diaphragm, and a first plurality of contact pads;, 'an acoustic resonator chip comprisingan interposer comprising a second conductor pattern, the second conductor pattern comprising a second plurality of contact pads on a back surface of the interposer; anda seal connecting a perimeter of the piezoelectric plate to a perimeter of the interposer, whereineach contact pad of the first plurality of contact pads is directly connected to a respective contact pad of the second plurality of contact pads.2. The acoustic resonator device of claim 1 , whereinthe cavity is a hole passing through a thickness of the substrate, andthe acoustic resonator device further comprises a cap bonded to a back surface of the substrate.3. The acoustic ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR PACKAGE AND METHOD

Methods of making acoustic resonator devices and filters are disclosed. A method of fabricating an acoustic resonator device includes fabricating an acoustic resonator chip including: attaching a back surface of a piezoelectric plate to a front surface of a substrate, such that portions of the piezoelectric plate form at least first and second diaphragms spanning at least first and second cavities, and forming a first conductor pattern as one or more conductor layers on the piezoelectric plate. The first conductor pattern includes at least first and second interdigitated transducers (IDTs) and a first plurality of contact pads. The method further includes fabricating an interposer having front and back surface and a second plurality of contact pads on the interposer back surface, forming conductive balls, and bonding each of the first plurality of contact pads to a respective pad of the second plurality of contact pads using the respective conductive ball. 1. A method of fabricating an acoustic resonator device comprising: attaching a back surface of a piezoelectric plate to a front surface of a substrate;', 'forming at least first and second cavities in the substrate such that portions of the piezoelectric plate form at least first and second diaphragms spanning the at least first and second cavities, respectively; and', at least first and second interdigitated transducers (IDTs), interleaved fingers of the first and second IDTs on the first and second diaphragms, respectively, and', 'a first plurality of contact pads;, 'forming a first conductor pattern as one or more conductor layers on a front surface of the piezoelectric plate, the first conductor pattern including], 'fabricating an acoustic resonator chip comprisingfabricating an interposer having front and back surface and a second plurality of contact pads on the interposer back surface;forming respective conductive balls either the first plurality of contact pads or the second plurality of contact pads; ...

TRANSMIT FILTER CIRCUIT AND COMPOSITE FILTER DEVICE

A transmit filter circuit includes an input terminal, an output terminal, plural series arm resonators, and a parallel arm resonator. The input terminal receives a transmit signal. The output terminal is electrically connected to an antenna. The plural series arm resonators are electrically connected in series with each other on a line between the input and output terminals. The plural series arm resonators include first and second series arm resonators. The first series arm resonator is closest to the output terminal. The second series arm resonator is second closest to the output terminal. A first end of the parallel arm resonator is electrically connected to a node between the first and second series arm resonators. A reference potential is provided to a second end of the parallel arm resonator. The resonant frequency of the first series arm resonator is higher than that of the second series arm resonator. 1. A transmit filter circuit comprising:an input terminal that receives a transmit signal;an output terminal electrically connected to an antenna;a plurality of series arm resonators electrically connected in series with each other on a line between the input terminal and the output terminal, the plurality of series arm resonators including first and second series arm resonators, the first series arm resonator being located closest to the output terminal, the second series arm resonator being second closest to the output terminal; anda parallel arm resonator, a first end of the parallel arm resonator being electrically connected to a node between the first and second series arm resonators, and a reference potential being provided to a second end of the parallel arm resonator; whereina resonant frequency of the first series arm resonator is higher than a resonant frequency of the second series arm resonator.2. The transmit filter circuit according to claim 1 , wherein the second series arm resonator is divided into a plurality of resonators claim 1 , the ...

RADIO-FREQUENCY FRONT-END CIRCUIT AND COMMUNICATION DEVICE

A radio-frequency front-end circuit includes a first filter that has a first pass band and is connected to an antenna common terminal, a second filter that has a second pass band and is connected to the antenna common terminal, a switch that includes a common terminal and selection terminals, the common terminal being connected to the first filter, and a third filter that is connected to one of the selection terminals and is disposed between the switch and an input/output terminal. A reflection coefficient of the first filter alone in the second pass band viewed from the antenna common terminal is larger than a reflection coefficient of the third filter alone in the second pass band viewed from the antenna common terminal. 1. A radio-frequency front-end circuit comprising:an antenna common terminal connected to an antenna element;a first input/output terminal and a second input/output terminal;a first filter that includes a first terminal and a second terminal and has a first pass band, the first terminal being connected to the antenna common terminal;a second filter that is connected to the antenna common terminal, is disposed between the antenna common terminal and the second input/output terminal, and has a second pass band different from the first pass band;a switch that includes a common terminal and a plurality of selection terminals, the common terminal being connected to the second terminal; anda third filter that is connected to a first selection terminal among the plurality of selection terminals and is disposed between the switch and the first input/output terminal; whereina reflection coefficient of the first filter alone in the second pass band viewed from the antenna common terminal is larger than a reflection coefficient of the third filter alone in the second pass band viewed from the antenna common terminal.2. The radio-frequency front-end circuit according to claim 1 , whereineach of the first filter and the third filter includes two or more ...

Filter with antiresonance frequency correction

A filter comprises a series unit comprising a plurality of series resonators, a shunt unit comprising a plurality of shunt resonators, connected between the plurality of series resonators and a ground, and a correction unit comprising an inductor unit connected between both ends of at least one of a set of series resonators of the plurality of series resonators and a set of shunt resonators of the plurality of shunt resonators, and an impedance unit connected between the inductor unit and a ground.

Packages with Organic Back Ends for Electronic Components

A packaged electronic component comprising: an electrical element packaged within a package comprising 1. A packaged electronic component comprising:an electrical element packaged within a package comprisinga front end of the package comprising an inner front section with a cavity therein opposite a resonator defined by a raised frame and an outer front section sealing said cavity; anda back end of the package comprising a back cavity in an inner back section, and an outer back section sealing the cavity, said back end further comprising a first and a second via through the back end around at least one back cavity for coupling to front and back electrodes of the electronic component; the vias terminating in external contact pads that are coupleable in a ‘flip chip’ configuration to a circuit board.2. The packaged electronic component of wherein the electronic component comprises an active membrane trapped between front and back electrodes.3. The packaged electronic component of claim 1 , wherein the electronic component comprises a resonator or an array of resonators providing a filter.4. The packaged electronic component of claim 3 , wherein the electronic component comprises an RF filter comprising a plurality of resonators in series and shunt claim 3 , each resonator having a dedicated upper and lower cavity.5. The packaged electronic component of wherein the active membrane comprises a piezoelectric membrane and the front and back electrodes comprise refractory metal having high acoustic velocity.6. The packaged electronic component of claim 5 , further characterized by at least one of the following limitations:the active membrane comprises a highly oriented or single crystal piezo membrane;the front electrode, back electrode and the active membrane have ultra flat surfaces (roughness<0.3 nm) and the front electrode has a high crystal orientation with respect to the active membrane;the front and back electrodes have highly oriented crystalline structures;the ...

INTEGRATED RADIO FREQUENCY (RF) FRONT-END MODULE (FEM)

Embodiments may relate to a radio frequency (RF) front-end module (FEM) that includes an acoustic wave resonator (AWR) die. The RF FEM may further include an active die coupled with the package substrate of the RF FEM. When the active die is coupled with the package substrate, the AWR die may be between the active die and the package substrate. Other embodiments may be described or claimed. 1. A radio frequency (RF) front-end module (FEM) comprising:a package substrate;an acoustic wave resonator (AWR) die; andan active die coupled with the package substrate such that the AWR die is between the active die and the package substrate.2. The RF FEM of claim 1 , wherein the AWR die is coupled with the package substrate.3. The RF FEM of claim 1 , wherein the AWR die is physically and communicatively coupled with the active die.4. The RF FEM of claim 1 , wherein the AWR die includes a plurality of resonators.5. The RF FEM of claim 1 , wherein the AWR die is a first AWR die claim 1 , and wherein the RF FEM includes a second AWR die between the active die and the package substrate.6. The RF FEM of claim 5 , wherein the first AWR die is related to a first frequency band and the second AWR die is related to a second frequency band that is different than the first frequency band.7. The RF FEM of claim 1 , wherein the active die includes circuitry related to RF control logic claim 1 , a switch claim 1 , a power-management integrated circuit (PMIC) claim 1 , a power amplifier claim 1 , a mixer claim 1 , or a phase shifter.8. The RF FEM of claim 1 , wherein the RF FEM has a z-height claim 1 , as measured in a direction perpendicular to a face of the package substrate to which the active die is coupled claim 1 , of less than 800 micrometers.9. A method of manufacturing a radio frequency (RF) front-end module (FEM) claim 1 , wherein the method comprises:positioning a first acoustic wave resonator (AWR) die adjacent to a package substrate; andcoupling an active die with the package ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR PACKAGE

Acoustic resonator devices and filters; and methods of their fabrication are disclosed. A piezoelectric plate is bonded to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity that is formed in the substrate. A first conductor pattern is formed on a surface of the piezoelectric plate. The first conductor pattern includes interleaved fingers of an interdigital transducer disposed on the diaphragm, and a first plurality of contact pads. A second conductor pattern is formed on a back surface of an interposer, the second conductor pattern including a second plurality of contact pads. The interposer is formed by cofiring layers of thin ceramic tape, at least one layer of the tape comprising printed conductors. A plurality of conductive balls is formed on and directly bonds the first plurality of contact pads to respective contact pads of the second plurality of contact pads. 1. A method of fabricating an acoustic resonator device comprising: bonding a back surface of a piezoelectric plate to a front surface of a substrate;', 'forming at least two cavities in the front surface of the substrate such that a portion of the piezoelectric plate forms at least two diaphragms spanning the cavities; and', at least two interdigitated transducers (IDTs), interleaved fingers of each of the IDTs disposed on one of the diaphragms, and', 'a first plurality of contact pads;, 'forming a first conductor pattern as one or more conductor layers on a front surface of the piezoelectric plate, the first conductor pattern including], 'fabricating an acoustic resonator chip comprising cofiring layers of thin ceramic tape, at least one layer of the tape comprising printed conductors; and', 'a second plurality of contact pads; and', 'forming a second conductor pattern on the back surface of the interposer, the second conductor pattern including], 'forming an interposer having front and back surfaces, forming the interposer comprisingforming a plurality of ...

RESONATORS WITH DIFFERENT MEMBRANE THICKNESSES ON THE SAME DIE

An acoustic resonator is fabricated by bonding a first piezoelectric plate to a substrate and spans locations for a first and second cavity in the substrate. A top surface of the first piezoelectric plate is planarized to a first thickness. A bonding layer is formed on the first piezoelectric plate and spans the first and second cavity locations. A second piezoelectric plate is bonded to the bonding layer and spans the first and second cavity locations. A portion of the second piezoelectric plate spanning the second cavity location is etched away to form a first membrane over the first cavity location and a second membrane over the second cavity location. Interdigital transducers are formed on the first and second membranes over the first and second cavity location to form a first and second resonator on the same die.

GUIDED ACOUSTIC WAVE DEVICE

An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained. 1. A device comprising:a piezoelectric layer; a first bus bar parallel to a longitudinal axis; and', 'a first plurality of electrode fingers extending transversely from the first bus bar parallel to a lateral axis;, 'a first interdigital electrode on a surface of the piezoelectric layer and comprising a second bus bar parallel to the longitudinal axis; and', 'a second plurality of electrode fingers extending transversely from the second bus bar parallel to the lateral axis and interleaved with the first plurality of electrode fingers such that a distance between adjacent electrode fingers in the first plurality of electrode fingers and the second plurality of electrode fingers measured along the longitudinal axis is varied; and, 'a second interdigital electrode on the surface of the piezoelectric layer and comprisinga slow wave propagation overlay over at least a portion of the first plurality of electrode fingers and the second plurality of electrode fingers such that a width of the slow wave propagation overlay measured along the lateral axis varies based on the distance between adjacent electrode fingers in the first plurality of electrode fingers and the second plurality of electrode fingers located directly beneath the slow wave propagation overlay.2. The device of wherein the first interdigital electrode and the second interdigital electrode form an interdigital transducer configured to transduce a piston wave in the piezoelectric layer.3. The ...

Acoustic wave device, and preparation method therefor and temperature control method thereof

An acoustic wave device and a preparation method therefor, and a temperature control method of the acoustic wave. The preparation method comprises: providing a first substrate and a second substrate (S 110 ); forming an acoustic wave structure on the first substrate (S 120 ); forming a temperature measuring resistor on the first substrate (S 130 ); forming a TEC device on the second substrate (S 140 ); and bonding the first substrate and the second substrate via metal fusion to produce the acoustic wave device (S 150 ).

Hybrid filter

The invention combines two filter technologies on a single device using the same substrate there for. On this substrate a filter circuit is arranged that has a ladder-type or a lattice arrangement of series and parallel impedance elements to provide a hybrid filter having for example a band pass function. The impedance elements are chosen from BAW resonators and LC elements.

ACOUSTIC FILTER USING ACOUSTIC COUPLING

A filter circuit includes a first input node and a second input node for receiving an input signal, and a first output node and a second output node for providing an output signal. A first series acoustic resonator is coupled in series between the first input node and the first output node. At least one coupled resonator filter (CRF) includes first and second transducers, which may be acoustically coupled to one another. The first transducer has a first electrode coupled to the first input node, a second electrode coupled to the second input node, and a first piezoelectric layer between the first electrode and the second electrode. A second transducer has a third electrode coupled to the first output node, a fourth electrode coupled to the second output node, and a second piezoelectric layer between the third electrode and the fourth electrode. 1. A filter circuit comprising:a first input node and a second input node for receiving an input signal;a first output node and a second output node for providing an output signal;a first series acoustic resonator coupled in series between the first input node and the first output node; and a first transducer having a first electrode coupled to the first input node, a second electrode coupled to the second input node, and a first piezoelectric layer between the first electrode and the second electrode; and', 'a second transducer having a third electrode coupled to the first output node, a fourth electrode coupled to the second output node, and a second piezoelectric layer between the third electrode and the fourth electrode., 'at least one coupled resonator filter (CRF) comprising2. The filter circuit of wherein the at least one CRF comprises a first CRF that comprises the first transducer claim 1 , the second transducer claim 1 , and a first coupling structure between the first transducer and the second transducer claim 1 , wherein the first transducer and the second transducer are vertically aligned such that the first ...

ELASTIC WAVE APPARATUS

An elastic wave apparatus includes first and second bandpass filters and the first bandpass filter is a ladder elastic wave filter. The mounting substrate includes an inductor which is connected between at least one of parallel arm resonators and a ground potential, a signal wiring at a hot side, which is connected to the first bandpass filter, and a ground wiring. When the mounting substrate is viewed from a side of a surface on which the elastic wave filter chip is mounted, a portion of the inductor overlaps with a portion of the signal wiring and a slit defining a wiring missing portion in which the ground wiring is absent in the ground wiring is provided in the overlapped portion. 1. An elastic wave apparatus comprising:a mounting substrate; andan elastic wave filter chip that is mounted on the mounting substrate; whereinthe elastic wave filter chip includes first and second bandpass filters, the first bandpass filter being a ladder bandpass filter including series arm resonators and parallel arm resonators each of which is defined by an elastic wave resonator;the mounting substrate includes an inductor which is connected between at least one of the parallel arm resonators and a ground potential, a signal wiring which is provided at a different height position from the inductor in the mounting substrate and is connected to the first bandpass filter, and a ground wiring which is provided at an intermediate height position of the mounting substrate between the inductor and the signal wiring; andwhen the mounting substrate is viewed from a side of a surface on which the elastic wave filter chip is mounted, at least a portion of the inductor overlaps with the signal wiring and a wiring missing portion in which a portion of the ground wiring is absent from the ground wiring is located in the overlapped portion.2. The elastic wave apparatus according to claim 1 , wherein the wiring missing portion is a slit.3. The elastic wave apparatus according to claim 2 , wherein ...

Bulk acoustic wave (baw) resonator with patterned layer structures, devices and systems

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.

COUPLED RESONATOR FILTER DEVICE

A coupled resonator filter device is disclosed. The coupled resonator filter device includes a substrate with one or more acoustic reflector layers disposed over the substrate, a first lower electrode disposed over the one or more acoustic reflector layers, a first piezoelectric layer disposed over the first lower electrode, and a first upper electrode disposed over the first piezoelectric layer. The coupled resonator filter device further includes one or more acoustic coupling layers disposed over the first upper electrode, a second lower electrode disposed over the one or more acoustic coupling layers, a second piezoelectric layer disposed over the second lower electrode, a second upper electrode disposed over the second piezoelectric layer, and a first tuning capacitor having a first upper plate coupled to the first upper electrode and a first lower plate coupled to the first lower electrode.

Positions of release ports for sacrificial layer etching

A film bulk acoustic wave resonator includes a piezoelectric film disposed over a cavity. The cavity is shaped as partial ellipse including first, second, and third vertices. The film bulk acoustic wave resonator further includes three release ports in positions that minimize etch time to remove all sacrificial material from within the cavity.

Transversely-excited film bulk acoustic resonator with low thermal impedance

An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the device to provide lower thermal resistance between the IDT and the substrate.

Method for forming multiple bulk acoustic wave filters on shared die

Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

ELECTRONIC PACKAGES COMPRISING STACKED BULK ACOUSTIC WAVE (BAW) RESONATOR and BAW RESONATOR FILTERS

An electronic package includes a first substrate and a second substrate disposed beneath the first substrate. The electronic package also includes a perimeter wall extending between an inner surface of the first substrate and an opposing inner surface of the second substrate to provide separation between the first substrate and the second substrate. A cavity exists between opposing inner surfaces of the first substrate and the second substrate. A first filter comprising a first plurality of bulk acoustic wave (BAW) resonators disposed over the inner surface first substrate. The electronic package also includes a second filter comprising a second plurality of BAW resonators disposed over the second substrate 1. An electronic package , comprising:a first substrate;a second substrate disposed beneath the first substrate; anda perimeter wall extending between an inner surface of the first substrate and an opposing inner surface of the second substrate to provide separation between the first substrate and the second substrate, wherein a cavity exists between opposing inner surfaces of the first substrate and the second substrate;a first filter comprising a first plurality of bulk acoustic wave (BAW) resonators disposed over the inner surface of the first substrate; anda second filter comprising a second plurality of BAW resonators disposed over the second substrate.2. The electronic package as claimed in claim 1 , wherein the perimeter wall is a first perimeter wall claim 1 , the cavity is a first cavity claim 1 , and the electronic package further comprises:a third substrate disposed over the second substrate; anda second perimeter wall extending between a surface of the first substrate and an opposing inner surface of the second substrate to provide separation between the first substrate and the second substrate, wherein a second cavity exists between opposing inner surfaces of the first substrate and the third substrate.3. The electronic package as claimed in claim 2 ...

ACOUSTIC WAVE FILTER AND DUPLEXER

An acoustic wave filter includes series resonators and parallel resonators that have a piezoelectric film on an identical substrate and have a lower electrode and an upper electrode, wherein: one of the series resonators and the parallel resonators have a temperature compensation film on a face of the lower electrode or the upper electrode that is opposite to the piezoelectric film in a resonance region, the compensation film having an elastic constant of a temperature coefficient of which sign is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric film; and the other have an added film on the same side as the temperature compensation film on the lower electrode side or the upper electrode side compared to the piezoelectric film in the resonance region in the one of the series resonators and the parallel resonators. 1. An acoustic wave filter comprisingseries resonators and parallel resonators that have a piezoelectric film on an identical substrate and have a lower electrode and an upper electrode that sandwich the piezoelectric film and face with each other,wherein:one of the series resonators and the parallel resonators have a temperature compensation film on a face of the lower electrode or the upper electrode that is opposite to the piezoelectric film in a resonance region in which the lower electrode and the upper electrode sandwich the piezoelectric film and face with each other, the compensation film having an elastic constant of a temperature coefficient of which sign is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric film; andthe other of the series resonators and the parallel resonators have an added film on the same side as the temperature compensation film on the lower electrode side or the upper electrode side compared to the piezoelectric film in the resonance region in the one of the series resonators and the parallel resonators.2. The acoustic wave filter as claimed ...

LATERALLY EXCITED BULK WAVE DEVICE WITH ACOUSTIC MIRRORS

A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a first solid acoustic mirror, a second solid acoustic mirror, a piezoelectric layer that is positioned between the first solid acoustic mirror and the second solid acoustic mirror, an interdigital transducer electrode on the piezoelectric layer, and a support substrate arranged to dissipate heat associated with the bulk acoustic wave. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the bulk acoustic wave. The first solid acoustic mirror is positioned on the support substrate. 1. A laterally excited bulk acoustic wave device comprising:a first solid acoustic mirror;a second solid acoustic mirror;a piezoelectric layer positioned between the first solid acoustic mirror and the second solid acoustic mirror;an interdigital transducer electrode on the piezoelectric layer, the interdigital transducer electrode arranged to laterally excite a bulk acoustic wave, the first solid acoustic mirror and the second solid acoustic mirror arranged to confine acoustic energy of the bulk acoustic wave; anda support substrate arranged to dissipate heat associated with the bulk acoustic wave, the first solid acoustic mirror being positioned on the support substrate.2. The laterally excited bulk acoustic wave device of further comprising a second substrate configured to dissipate heat associated with the bulk acoustic wave claim 1 , the first solid acoustic mirror and the second solid acoustic mirror both being positioned between the support substrate and the second substrate.3. The laterally excited bulk acoustic wave device of wherein the first solid acoustic mirror is arranged to confine acoustic energy such that the support substrate is free from acoustic energy during operation of the laterally excited bulk ...

LATERALLY EXCITED BULK WAVE DEVICE WITH ACOUSTIC MIRROR

A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a support substrate, a solid acoustic mirror on the support substrate, a piezoelectric layer on the solid acoustic mirror, and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave. 1. A laterally excited bulk acoustic wave device comprising:a support substrate;a solid acoustic mirror on the support substrate;a piezoelectric layer on the solid acoustic mirror; andan interdigital transducer electrode on the piezoelectric layer, the interdigital transducer electrode arranged to laterally excite a bulk acoustic wave.2. The laterally excited bulk acoustic wave device of wherein the support substrate is arranged to increase heat dissipation of the laterally excited bulk acoustic wave device.3. The laterally excited bulk acoustic wave device of wherein heat associated with the bulk acoustic wave is arranged to flow through the solid acoustic mirror to the support substrate.4. The laterally excited bulk acoustic wave device of wherein the support substrate has a thermal conductivity that is higher than a thermal conductivity of the piezoelectric layer.5. The laterally excited bulk acoustic wave device of wherein the solid acoustic mirror is arranged to confine acoustic energy such that the support substrate is free from acoustic energy during operation of the laterally excited bulk acoustic wave device.6. The laterally excited bulk acoustic wave device of wherein the solid acoustic mirror is an acoustic Bragg reflector that includes alternating low impedance and high impedance layers.7. The laterally excited bulk acoustic wave device of wherein at least one of the low impedance layers and at least one of the high impedance layers are free from acoustic energy during operation of the laterally excited bulk acoustic wave device.8. The laterally excited bulk ...

Microelectromechanical Resonant Circulator

A microelectromechanical resonant circulator device is providing, having a substrate, and at least three electrical ports supported on the substrate. At least three electromechanical resonator elements are connected with associated switch elements and an associated port. The switch elements are operative to provide commutation over time of the electromechanical resonator elements. 1. A microelectromechanical resonant circulator device comprising:a substrate, at least three electrical ports supported on the substrate;at least three electromechanical resonator elements; andat least three switch elements, each switch element electrically connected between at least one associated electromechanical resonator element and at least one associated port, the switch elements operative to provide commutation over time of the electromechanical resonator elements.2. The device of claim 1 , wherein the switch elements are operative to commutate the electromechanical resonator elements over time to form an equivalent resonator network with a resonance frequency or impedance or coupling modulated in time.3. The device of claim 1 , wherein the switch elements are operative to commutate between at least one of a capacitor and a short circuit claim 1 , a capacitor and an open circuit claim 1 , an inductor and a short circuit claim 1 , an inductor and an open circuit claim 1 , and a short circuit and an open circuit.4. The device of claim 1 , wherein at least one switch element comprises a capacitor in parallel with a switch claim 1 , an inductor in parallel with a switch claim 1 , a single pole single throw switch claim 1 , or a single pole double throw switch.5. The device of claim 1 , wherein the switch elements are operative at a same commutation frequency and shifted in phase or at different commutation frequencies and shifted in phase.6. The device of claim 1 , wherein the switch elements are operative to provide commutation frequencies ranging from 0.001% to 300% of an operating ...

FILTER USING BAWRS

Provided is a filter using bulk acoustic wave resonators (BAWRs), the filter comprising two or more BAWRs connected in series or in parallel to each other, one or more LC elements being connected in series or in parallel to the respective BAWRs, thus constituting a BAWR set. 1. A filter using bulk acoustic wave resonators (BAWRs) , the filter comprising:at least two BAWRs connected in series or in parallel to each other,wherein a BAWR set is configured by connecting at least one inductance and capacitance (L/C) element to each BAWR in series or in parallel.2. The filter of claim 1 , wherein each L/C element is configured to control a resonance frequency or an anti-resonance frequency of each BAWR.3. The filter of claim 1 , wherein at least one lattice structure circuit is configured by combining the respective BAWR sets.4. The filter of claim 3 , wherein the lattice structure circuit comprises:a first BAWR set and a second BAWR set connected in series;a third BAWR set having an end connected to an input end of the first BAWR set and having another end connected to an output end of the second BAWR set; anda fourth BAWR set having an end connected to an output end of the first BAWR set and having another end connected to an input end of the second BAWR set.5. The filter of claim 4 , wherein an L/C element of the first BAWR set and an L/C element of the second BAWR set have an identical connection structure.6. The filter of claim 4 , wherein an L/C element of the third BAWR set and an L/C element of the fourth BAWR set have an identical connection structure.7. The filter of claim 1 , wherein at least one ladder structure circuit is configured by combining the respective BAWR sets.8. The filter of claim 7 , wherein the ladder structure circuit comprises:at least one first BAWR set and at least one second BAWR set connected in series; anda third BAWR set having an end connected to an output end of the at least one first BAWR set and having another end connected to an ...

Air-gap type fbar

An air-gap type film bulk acoustic resonator (FBAR) according to the present invention may include: a substrate comprising an air gap portion on an upper surface thereof; a lower electrode formed on the substrate; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a protective layer formed on the upper electrode; and a beam structure extended in a dome shape from one side of the upper electrode to define a space portion between the upper electrode and the piezoelectric layer, wherein one end of the beam structure is in contact with the piezoelectric layer.

RADIO FREQUENCY FRONT-END CIRCUIT AND COMMUNICATION DEVICE

A radio frequency front-end circuit includes a multiplexer including filters with different pass bands and including a first acoustic wave filter and a first terminal of each of the filters being connected in common, a second acoustic wave filter including a pass band within the pass band of the first acoustic wave filter, and a switch including a common terminal connected to a second terminal of the first acoustic wave filter and selective terminals including a selective terminal connected to the second acoustic wave filter. Each of an acoustic wave resonator of the first acoustic wave filter located closest to the switch and an acoustic wave resonator of the second acoustic wave filter located closest to the switch, is a serial arm resonator. 1. A radio frequency front-end circuit that is able to be included in a communication system that transmits , receives , or transmits and receives signals in a plurality of frequency bands at a same time or substantially the same time , the radio frequency front-end circuit comprising:a multiplexer including a plurality of filters with different pass bands from one another, the plurality of filters including a first acoustic wave filter and a first terminal of each of the plurality of filters being connected in common;a second acoustic wave filter including a pass band within a pass band of the first acoustic wave filter; anda switch including a common terminal connected to a second terminal of the first acoustic wave filter, and a plurality of selective terminals including a selective terminal connected to the second acoustic wave filter; whereina first acoustic wave resonator of one or more acoustic wave resonators defining the first acoustic wave filter is a serial arm resonator and is located closest to the switch among the one or more acoustic wave resonators of the first acoustic wave filter; anda second acoustic wave resonator of one or more acoustic wave resonators defining the second acoustic wave filter is a serial ...

High-pass filter and multiplexer

A high-pass filter includes: at least one capacitor located in a first pathway between input and output terminals and connected between the input and output terminals; at least one inductor, a first end of the at least one inductor being coupled to the first pathway, a second end of the at least one inductor being coupled to a ground; at least one first acoustic wave resonator located in a second pathway connected in parallel to the first pathway between the input and output terminals, the at least one first acoustic wave resonator being connected in parallel to the at least one capacitor; and at least one second acoustic wave resonator, a first end of the at least one second acoustic wave resonator being coupled to the second pathway, a second end of the at least one second acoustic wave resonator being coupled to a ground.

Bulk acoustic wave resonator and filter

A bulk acoustic wave resonator and a filter in which partial thicknesses of protection layers or reflection layers thereof are differently formed are provided. The bulk acoustic wave resonator includes a bulk acoustic wave resonating part comprising a piezoelectric layer, and a reflection layer configured to reflect waves of a resonance frequency generated by the piezoelectric layer based on a signal applied to the bulk acoustic wave resonating part. A thickness of a portion of the reflection layer is different from a thickness of a remaining portion thereof.

BROADBAND ACOUSTIC WAVE RESONATOR (AWR) FILTERS

Techniques are disclosed implementing acoustic wave resonator (AWR) filter architectures to enable integrated solutions requiring significantly less passive components. The primary AWR filter topology leverages the use of parallel resonator branches, each having a relatively narrow bandwidth that may be combined to form an overall broadband filter response. This architecture may be further modified using electronically-controlled switching components to dynamically turn specific branches on or off to tune the filter, thus realizing a programmable broadband solution. Shunt resonators may also be added to the AWR filter topology, which may also be controlled with the use of electronically-controlled switching components to provide further control with respect to roll-off and the location and number of notch frequencies. 1. An acoustic wave resonator (AWR) filter , comprising:a first terminal;a second terminal; anda plurality of resonator branches, each of the plurality of resonator branches including at least a first AWR and a second AWR coupled in series with one another,wherein the plurality of resonator branches are coupled in parallel with one another such that each of the first AWRs from among the plurality of resonator branches are coupled to one another and to the first terminal, and each of the second AWRs from among the plurality of resonator branches are coupled to one another and to the second terminal,wherein each respective one of the plurality of resonator branches represents a different quantized bandwidth and has a selectively controlled resonant state that contributes to a different portion of an operational passband of a filter response associated with the AWR filter, andwherein when each respective one of the plurality of resonator branches is in a resonant state, each different portion of the operational passband of the filter response associated with the AWR filter, which is represented by each respective one of the plurality of resonator branches ...

NANO- AND MICROELECTROMECHANICAL RESONATORS

A resonator includes a piezoelectric plate and interdigitated electrode(s). The interdigitated electrode includes a plurality of conductive strips disposed over a top surface of the piezoelectric plate. A two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric plate in response to an alternating voltage applied through the interdigitated electrode. The two-dimensional mode of mechanical vibration is a cross-sectional Lamé mode resonance (CLMR) or a degenerate cross-sectional Lamé mode resonance (dCLMR). 1. A resonator comprising:a piezoelectric layer having a length direction (L), a width direction (W), and a thickness direction (T);a first conductive layer including at least one first electrode disposed over a top surface of the piezoelectric layer, wherein the top surface extends along the length direction and the width direction;a second conductive layer including at least one second electrode disposed over a bottom surface of the piezoelectric layer, wherein the bottom surface extends along the length direction and the width direction;wherein a two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric layer in response to at least one signal provided to the at least one first electrode and/or the at least one second electrode;wherein a two-dimensional mode of mechanical vibration in a cross sectional plane of the piezoelectric layer is sensed through piezoelectrically generated charge collected by the at least one first electrode and/or the at least one second electrode;wherein the cross sectional plane extends along the width direction and the thickness direction;wherein the frequency of the two-dimensional mode of mechanical vibration is dependent on both the width direction and the thickness direction of the resonator structure; andwherein electromechanical coupling of the two-dimensional mode of mechanical vibration is dependent on a numerical ratio of the thickness ...

ACOUSTIC WAVE DEVICE WITH CERAMIC SUBSTRATE

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a ceramic substrate, a piezoelectric layer over the ceramic substrate, and an interdigital transducer electrode over the piezoelectric layer. The ceramic substrate can be a polycrystalline spinel substrate. The surface acoustic wave device can also include a temperature compensating layer over the interdigital transducer electrode. 1. A surface acoustic wave device comprising:a ceramic substrate;a piezoelectric layer over the ceramic substrate;an interdigital transducer electrode over the piezoelectric layer; anda temperature compensating layer over the interdigital transducer electrode, the surface acoustic wave device configured to generate a surface acoustic wave.2. The surface acoustic wave device of wherein the ceramic substrate is a polycrystalline spinel substrate.3. The surface acoustic wave device of wherein a surface of the polycrystalline spinel substrate has a maximum roughness of 2 nanometers or less.4. The surface acoustic wave device of wherein a surface of the polycrystalline spinel substrate has an average roughness of 1 nanometers or less.5. The surface acoustic wave device of wherein the surface acoustic wave has a wavelength of λ claim 1 , and the piezoelectric layer has a thickness in a range from 3λ claim 1 , to 20λ.6. The surface acoustic wave device of wherein the thickness of the piezoelectric layer is at least 5λ.7. The surface acoustic wave device of wherein the temperature compensating layer is a silicon dioxide layer.8. The surface acoustic wave device of wherein the interdigital transducer electrode includes two layers.9. The surface acoustic wave device of wherein one of the two layers includes aluminum.10. The surface acoustic wave device of wherein the other of the two layers includes molybdenum.11. The surface acoustic wave device of wherein the piezoelectric layer includes lithium niobate.12. The surface acoustic wave device of further ...

Bulk acoustic wave resonator with multilayer piezoelectric structure

A bulk acoustic wave (BAW) resonator has a bottom electrode, a top electrode over the bottom electrode, and a multilayer piezoelectric structure between the bottom electrode and the top electrode. The multilayer piezoelectric structure has a first piezoelectric layer having a first electromechanical coupling coefficient and a second piezoelectric layer having a second electromechanical coupling coefficient that is different than the first electromechanical coupling coefficient.

Bulk Acoustic Wave Filter and a Method of Frequency Tuning for Bulk Acoustic Wave Resonator of Bulk Acoustic Wave Filter

A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure. 1. A method for forming bulk acoustic wave resonators comprising following steps{'b': '1', 'Step B: forming a first sacrificial structure mesa and a second sacrificial structure mesa on a substrate, wherein a height of said first sacrificial structure mesa is greater than a height of said second sacrificial structure mesa, wherein said first sacrificial structure mesa and said second sacrificial structure mesa have a height difference;'}{'b': '2', 'Step B: forming an insulating layer on said first sacrificial structure mesa, said second sacrificial structure mesa, and said substrate;'}{'b': '3', 'Step B: polishing said insulating layer by a chemical-mechanical planarization process to form a polished surface, wherein said insulating layer is polished such that a second remain portion of said insulating layer remains above said second sacrificial structure mesa;'}{'b': 4', '4, 'claim-text': [{'b': '41', 'Step B: forming a bottom electrode layer on said polished surface;'}, {'b': '42', 'Step B: forming a piezoelectric layer on said ...

Border ring mode suppression in solidly-mounted bulk acoustic wave resonator

Embodiments provide a solidly-mounted bulk acoustic wave (BAW) resonator and method of making same. In embodiments, the BAW resonator may include one or more extensions that are acoustical similar to active region components of the BAW resonator. Other embodiments may be described and claimed.

SPLIT CURRENT BULK ACOUSTIC WAVE (BAW) RESONATORS

An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate. 1. An apparatus comprising:a first arm comprising a first bulk acoustic wave (BAW) resonator and a second BAW resonator connected in anti-series;a second arm comprising a third BAW resonator and a fourth BAW resonator; andan input configured to split input current substantially equally to the first and second arms wherein the first and second BAW resonators are connected in parallel with the third and fourth BAW resonators.2. An apparatus as claimed in claim 1 , wherein the third BAW resonator is connected in anti-series with the fourth BAW resonator.3. An apparatus as claimed in claim 1 , wherein the third BAW resonator is connected in series with the fourth BAW resonator.4. An apparatus as claimed in claim 1 , further comprising a third arm comprising as fifth BAW resonator and a sixth BAW resonator connected in anti-series claim 1 , the third BAW resonator being connected in anti-series with the fourth BAW resonator claim 1 , wherein the input is further configured to split input current substantially equally to the first claim 1 , second and third arms.5. An apparatus as claimed in claim 4 , wherein fifth and sixth BAW resonators are connected in parallel with the third and fourth BAW resonators.6. An apparatus as claimed in claim 4 , wherein fifth and sixth BAW resonators are connected in anti-parallel with the third and fourth BAW resonators.7. An apparatus as claimed in claim 1 , further comprising a third arm comprising a fifth BAW resonator and a sixth BAW resonator connected in series claim 1 , the third BAW resonator being connected in series with the fourth BAW resonator claim 1 , wherein the input is further configured to split input current substantially equally to the first claim 1 , second and third arms.8. An apparatus as claimed in claim 7 , wherein fifth and sixth BAW resonators are connected in parallel with the ...

System and method for a radio frequency filter

In accordance with an embodiment, an RF system includes a transmit path having a first tunable transmit band stop filter, and a power amplifier coupled to an output of the first tunable transmit band stop filter, where the first tunable transmit band stop filter is configured reject a receive frequency and pass a transmit frequency; a receive path comprising an LNA; and a duplex filter having a transmit path port coupled to an output of the power amplifier, a receive path port coupled to an input of the LNA, and an antenna port, where the duplex filter is configured to pass the transmit frequency and reject the receive frequency between the antenna port and the transmit path port, pass the receive frequency and reject the transmit frequency between the antenna port and the receive path port.

Tunable Resonator Element, Filter Circuit and Method

A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

ACOUSTICALLY COUPLED RESONATOR NOTCH AND BANDPASS FILTERS

A bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground. 1. A bandpass filter comprising:a capacitor coupled between an input node and an output node; anda dual-resonator structure coupled between the input node, the output node, and ground.2. The bandpass filter of claim 1 , wherein the dual-resonator structure comprises a stacked crystal filter.3. The bandpass filter of claim 1 , wherein the dual-resonator structure comprises a coupled resonator filter.4. A bandpass filter comprising:a first coupled resonator filter having a first resonator acoustically coupled to a second resonator, the first resonator being coupled to an input node; anda second coupled resonator filter having a third resonator acoustically coupled to a fourth resonator, the fourth resonator being coupled to an output node,wherein the second resonator and the fourth resonators are in electrical communication.5. The bandpass filter of claim 4 , wherein the second resonator and the fourth resonator are cross-coupled.6. The bandpass filter of claim 4 , wherein the second resonator and the fourth resonator are directly coupled.7. The bandpass filter of claim 4 , further comprising a capacitor coupled between the input node and the output node.8. The bandpass filter of claim 4 , further comprising first and second serially coupled capacitors coupled between the input node and the output node.9. The bandpass filter of claim 8 , wherein the second and fourth resonators are coupled to an intermediate coupling node of the first and second serially coupled capacitors.10. The bandpass filter of claim 4 , wherein an electrode of the second resonator is coupled to an electrode of the fourth resonator through a first inductor.11. The bandpass filter of claim 10 , further comprising a second inductor coupled between the first resonator and ground.12. The bandpass filter of claim 11 , ...

ACOUSTICALLY COUPLED RESONATOR NOTCH AND BANDPASS FILTERS

A notch filter includes a first inductor coupled between an input node and an output node, a dual-resonator structure coupled between the input node and the output node, and a second inductor coupled between the dual-resonator structure and ground, and a bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground. 1. A notch filter comprising:a first inductor coupled between an input node and an output node;a dual-resonator structure coupled between the input node and the output node; anda second inductor coupled between the dual-resonator structure and ground.2. The notch filter of claim 1 , wherein the dual-resonator structure comprises a first resonator coupled between the input node and ground claim 1 , and a second resonator coupled between the output node and ground.3. The notch filter of claim 1 , wherein the dual-resonator structure comprises a stacked crystal filter.4. The notch filter of claim 1 , wherein the dual-resonator structure comprises a coupled resonator filter.5. The notch filter of claim 4 , wherein the coupled resonator filter comprises a single acoustic coupling layer.6. The notch filter of claim 4 , wherein the coupled resonator filter comprises a plurality of acoustic coupling layers.7. A tunable notch filter comprising:a first inductor coupled between an input node and an output node;a tunable resonator structure coupled between the input node and the output node;a second inductor coupled between the tunable resonator structure and ground.8. The tunable notch filter of claim 7 , wherein the tunable resonator structure comprises a stacked crystal filter.9. The tunable notch filter of claim 7 , wherein the tunable resonator structure comprises a coupled resonator filter.10. The tunable notch filter of claim 7 , wherein the tunable resonator structure comprises a film bulk acoustic resonator.11. The tunable notch filter of ...

METHOD FOR FABRICATING BULK ACOUSTIC WAVE RESONATOR WITH MASS ADJUSTMENT STRUCTURE

A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure. 1. A method for fabricating a bulk acoustic wave resonator , comprising:forming a sacrificial structure mesa on a substrate;forming an insulating layer on said sacrificial structure mesa and said substrate;polishing said insulating layer to expose said sacrificial structure mesa;recessing a part of said sacrificial structure mesa to form a recess, wherein a sidewall of said recess is defined by a sidewall of said sacrificial structure mesa;forming a polish layer on said sacrificial structure mesa and said insulating layer, wherein said recess is filled with a first portion of said polish layer;forming a piezoelectric layer on said polish layer;forming a top electrode layer on said piezoelectric layer; andetching said sacrificial structure mesa to form a cavity, wherein said first portion of said polish layer serves as a mass adjustment structure on said cavity.2. The method according to claim 1 , wherein said recess is located on a peripheral part of said sacrificial structure mesa claim 1 , and a bottom surface of said first portion ...

BULK-ACOUSTIC RESONATOR MODULE

A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate. 1. A bulk-acoustic resonator module , comprising:a module substrate;a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; anda sealing portion sealing the bulk-acoustic resonator,wherein the bulk-acoustic resonator comprises a resonating portion disposed opposite to an upper surface of the module substrate, and a space is disposed between the resonating portion and the upper surface of the module substrate.2. The bulk-acoustic resonator module of claim 1 , wherein the bulk-acoustic resonator further comprises:a resonator substrate;an insulating layer disposed on a surface of the resonator substrate;a membrane layer forming a cavity together with the insulating layer, the resonating portion being disposed on the cavity, and comprising a first electrode, a piezoelectric layer, and a second electrode arranged in a stacked configuration;a protective layer disposed on the first electrode, the piezoelectric layer, and the second electrode in the resonating portion; anda hydrophobic layer disposed on the protective layer.3. The bulk-acoustic resonator module of claim 2 , wherein the hydrophobic layer has a contact angle of 90° or more with water.4. The bulk-acoustic resonator module of claim 2 , wherein the hydrophobic layer comprises either one or both of fluorine (F) and silicon (Si).5. The bulk-acoustic resonator module of claim 2 , wherein the hydrophobic layer surrounds the cavity and the membrane layer.6. The bulk- ...

MODE SUPPRESSION IN ACOUSTIC RESONATORS

Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include mode suppression structures. Acoustic resonators, including stacked crystal filters (SCFs), are disclosed that include spurious mode suppression by modifying a piezoelectric coupling profile within one or more layers of an SCF. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof. Symmetric input and output electrical response for SCFs with mode suppression configurations may be exhibited by including piezoelectric materials with different electromechanical coupling values and/or by dividing stress profiles differently by configuring different thicknesses for input and output sides of SCFs. 1. An acoustic resonator comprising:a first piezoelectric layer;a second piezoelectric layer;a shared electrode between the first piezoelectric layer and the second piezoelectric layer;a first electrode on the first piezoelectric layer opposite the shared electrode;a second electrode on the second piezoelectric layer opposite the shared electrode; anda third piezoelectric layer between the second electrode and the shared electrode, the third piezoelectric layer having a polarity that is opposite a polarity of the second piezoelectric layer.2. The acoustic resonator of claim 1 , wherein the third piezoelectric layer is between the second electrode and the second piezoelectric layer.3. The acoustic resonator of claim 1 , wherein the third piezoelectric layer is between the shared electrode and the second piezoelectric layer.4. The acoustic resonator of claim 1 , wherein the second piezoelectric layer has a higher electromechanical coupling than the first piezoelectric layer.5. The acoustic resonator of claim 1 , wherein the first piezoelectric layer has a higher electromechanical coupling than the second piezoelectric layer.6. ...

PHASE SHIFT STRUCTURES FOR ACOUSTIC RESONATORS

Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include phase shift structures. Acoustic resonators, including stacked crystal filters (SCFs) and coupled resonator filters (CRFs), may include inverted piezoelectric layers that are configured to provide built-in phase shift capabilities. Circuit topologies that include such SCFs may be provided with simplified structures and reduced loss. Circuit topologies with such CRFs may be provided with more symmetrical electrical connections and improved phase balance over operating frequencies. SCFs with phase shift structures may additionally include spurious mode suppression by modifying piezoelectric coupling profiles within one or more layers. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof. 1. A stacked crystal filter (SCF) comprising:a first piezoelectric layer;a second piezoelectric layer having a polarity that is opposite a polarity of the first piezoelectric layer to provide a phase shift;a shared electrode between the first piezoelectric layer and the second piezoelectric layer;a first electrode on the first piezoelectric layer opposite the shared electrode; anda second electrode on the second piezoelectric layer opposite the shared electrode.2. The SCF of claim 1 , further comprising a third piezoelectric layer between the second electrode and the shared electrode claim 1 , the third piezoelectric layer having a polarity that is opposite the polarity of the second piezoelectric layer.3. The SCF of claim 2 , wherein the second piezoelectric layer has a higher electromechanical coupling than the first piezoelectric layer.4. The SCF of claim 2 , wherein the first piezoelectric layer has a higher electromechanical coupling than the second piezoelectric layer.5. The SCF of claim 2 , further comprising a fourth ...

BULK ACOUSTIC WAVE RESONATOR

A bulk acoustic wave (BAW) resonator includes: an acoustic reflector disposed in a substrate; a lower electrode disposed over the acoustic reflector; a piezoelectric layer disposed over the lower electrode; and an upper electrode disposed over the piezoelectric layer. A contacting overlap of the lower electrode, the piezoelectric layer and the upper electrode over the acoustic reflector comprising an active area of the BAW resonator. An opening exists in the upper electrode in a region of the BAW resonator susceptible to unacceptable overheating. 1. A bulk acoustic wave (BAW) resonator , comprising:an acoustic reflector disposed in a substrate;a lower electrode disposed over the acoustic reflector;a piezoelectric layer disposed over the lower electrode; andan upper electrode disposed over the piezoelectric layer, a contacting overlap of the lower electrode, the piezoelectric layer, and the upper electrode over the acoustic reflector comprising an active area of the BAW resonator, wherein an opening exists in the upper electrode in a region of the BAW resonator susceptible to unacceptable overheating.2. The BAW resonator as claimed in claim 1 , wherein the opening does not extend into the piezoelectric layer.3. The BAW resonator as claimed in claim 1 , wherein the opening exists substantially in a central portion of the upper electrode.4. The BAW resonator as claimed in claim 1 , wherein the acoustic reflector is a cavity provided in the substrate.5. The BAW resonator as claimed in claim 1 , wherein the acoustic reflector comprises alternating low acoustic impedance and high acoustic impedance layers.6. The BAW resonator as claimed in claim 1 , wherein the opening has a substantially circular shape.7. The BAW resonator as claimed in claim 1 , wherein the opening has a substantially hexagonal shape.8. The BAW resonator as claimed in claim 1 , wherein the active area is increased by an areal dimension substantially equal to an areal dimension of the opening claim 1 , ...

Acoustically coupled resonator notch and bandpass filters

A notch filter includes an inductor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

FILTER CHIP AND METHOD FOR PRODUCING A FILTER CHIP

The present invention relates to a filter chip (), comprising an interconnection of at least one first and one second resonator () operating with bulk acoustic waves, wherein the first resonator () operating with bulk acoustic waves comprises a first piezoelectric layer () that is structured in such a way that the first resonator () has a lower resonant frequency than the second resonator (). 1. A filter chip ,comprising an interconnection of at least one first and one second resonator operating with bulk acoustic waves,wherein the first resonator operating with bulk acoustic waves comprises a first piezoelectric layer that is structured in such a way that the first resonator has a lower resonant frequency than the second resonator.2. The filter chip as claimed in claim 1 ,wherein the first resonator operating with bulk acoustic waves has a main mode in a thickness direction, andwherein the second resonator operating with bulk acoustic waves has a main mode in a thickness direction.3. The filter chip as claimed in claim 1 ,wherein the first piezoelectric layer is structured with pits that run through the first piezoelectric layer.4. The filter chip as claimed in claim 1 ,wherein the second piezoelectric layer is unstructured or structured.5. The filter chip as claimed in claim 1 ,wherein the first and/or the second piezoelectric layer are/is structured in such a way that pits extend in a vertical direction through the first and/or the second piezoelectric layer.6. The filter chip as claimed in claim 1 ,wherein the first piezoelectric layer and the second piezoelectric layer have the same thickness.7. The filter chip as claimed in claim 1 ,wherein the first and/or the second resonator have/has a trimming layer.8. The filter chip as claimed in claim 1 ,wherein the first resonator and/or the second resonator are/is arranged on an acoustic mirror.9. The filter chip as claimed in claim 1 ,wherein the first resonator and/or the second resonator are/is arranged in a freely ...

SINGLE-FLIPPED RESONATOR DEVICES WITH 2DEG BOTTOM ELECTRODE

Techniques are disclosed for forming integrated circuit single-flipped resonator devices that include an electrode formed of a two-dimensional electron gas (2 DEG). The disclosed resonator devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2 DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2 DEG electrode may be able to achieve similar or increased carrier transport as compared to a resonator device having an electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the resonator device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques. 1. A radio frequency (RF) filter device , comprising:a first electrode;a polarization layer at least partially comprising single crystal material on the first electrode;a III-N layer comprising a single crystal III-N compound on the polarization layer;a second electrode comprising a two-dimensional electron gas (2 DEG) region in the III-N layer; anda substrate under the first electrode, such that the first electrode is between the substrate and the second electrode.225-. (canceled) Modern communication systems utilize radio frequency (RF) filters to convert electrical energy into mechanical energy and vice versa. Some RF filters employ film bulk acoustic resonators (FBARs), sometimes called thin-film bulk acoustic resonators (TFBARs). With the growing number of frequency bands and modes of communications, the quantity of RF filters in a typical mobile device has significantly increased.As will be appreciated, the figures are not necessarily drawn to scale or intended to limit the disclosure to the specific configurations shown. For instance, while some figures generally indicate straight lines, ...

ACOUSTIC WAVE FILTER DEVICE AND COMPOSITE FILTER DEVICE

An acoustic wave filter device includes a second filter section connected to a first filter section. The second filter section includes acoustic wave resonators in a ladder circuit configuration. Of the acoustic wave resonators in the first and second filter sections, the acoustic wave resonator having the smallest fractional bandwidth is included in the second filter section. In the second filter section, inductors are respectively connected between parallel arm resonators and a reference potential. Attenuation near a pass band in the second filter section is larger than attenuation near a pass band in the first filter section. 1. An acoustic wave filter device comprising:a first filter section including a ladder circuit including at least one first serial arm resonator and at least one first parallel arm resonator, the at least one first serial arm resonator and the at least one second parallel arm resonator each being defined by an acoustic wave resonator; anda second filter section connected to the first filter section and including a ladder circuit including at least one second serial arm resonator and at least one second parallel arm resonator, the at least one second serial arm resonator and the at least one second parallel arm resonator each being defined by an acoustic wave resonator; whereina fractional bandwidth of the second filter section is smaller than a fractional bandwidth of the first filter section;the first filter section includes or does not include at least one first inductor connected between the at least one first parallel arm resonator and a reference potential;the second filter section includes at least one inductor connected between at least the one second parallel arm resonator and the reference potential; andan inductor having a largest inductance value among the at least one first inductor and the at least one second inductor each connected between the at least one first parallel arm resonator or the least one second parallel arm ...

Piezoelectric thin film resonator, filter, and multiplexer

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted between the lower electrode and the upper electrode, is located in an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, is located in a region that is located outside the resonance region and surrounds the resonance region, is not located in a center region of the resonance region, and includes a first part, which is located in the resonance region and has a first film thickness, and a second part, which is located outside the resonance region and has a second film thickness, the first film thickness being less than the second film thickness.

RF FILTERS AND RESONATORS OF CRYSTALLINE III-N FILMS

A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint. 1. An integrated circuit device , comprising:a substrate;a single crystal semiconductor post extending from the substrate, the post having side surfaces defining a post width, the post also having a first end, and a second end opposite the first end, the second end on a portion of the substrate;a first layer comprising single crystal piezoelectric semiconductor material and on the first end of the single crystal semiconductor post, the first layer having a width greater than the post width and a fist thickness associated with a resonant frequency; anda second layer comprising metal and on a top surface and on a bottom surface of the first layer, wherein the post, the first layer, and the second layer are part of a first resonator.2. The integrated circuit device of claim 1 , wherein the portion of the substrate on which the second end of the post is located is a first portion claim 1 , and the thickness associated with the resonant frequency is a first thickness claim 1 , the device further comprising a third layer comprising single crystal piezoelectric semiconductor material on a second portion of the substrate different from the first portion of the substrate claim 1 , the third layer having a second thickness less than the first thickness of the first layer.3. The integrated circuit device of claim 2 , wherein the first layer and the third layer both include a compound that ...

FILTER AND FRONT END MODULE INCLUDING THE SAME

A filter may include a plurality of bulk acoustic wave resonators including one or more series resonators and one or more shunt resonators formed by a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, a cap accommodating the plurality of bulk acoustic wave resonators therein, and one or more switches provided on the cap. 1. A filter comprising:a plurality of bulk acoustic wave resonators including one or more series resonators and one or more shunt resonators formed by a first electrode, a piezoelectric layer, and a second electrode sequentially disposed on a substrate;a cap accommodating the plurality of bulk acoustic wave resonators therein; andone or more switches provided on the cap.2. The filter of claim 1 , wherein one of the one or more series resonators and the one or more shunt resonators is connected to the switch.3. The filter of claim 2 , wherein the one resonator connected to the switch is selectively operated depending on a switching operation of the switch.4. The filter of claim 3 , wherein a frequency band of the filter is varied depending on the switching operation of the switch.5. The filter of claim 4 , wherein an upper limit frequency of the frequency band is varied depending on selective operation of a series resonator of the one or more series resonators connected to the switch.6. The filter of claim 4 , wherein a lower limit frequency of the frequency band is varied depending on the selective operation of the one or more shunt resonators connected to the switch.7. The filter of claim 1 , wherein the switch is provided on an upper surface of the cap by a complementary metal oxide semiconductor (CMOS) process.8. The filter of claim 7 , wherein the cap includes:a cap connection pad extended along the upper surface of the cap and connected to the switch; anda connection electrode disposed to penetrate through the upper surface of the cap in a thickness direction to connect one or both of the first ...

BULK ACOUSTIC WAVE RESONATOR HAVING DOPED PIEZOELECTRIC LAYER

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element. For a particular acoustic coupling coefficient (kt) value and a series resonance frequency (F) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer. 1. A bulk acoustic wave (BAW) resonator , comprising:a first electrode having a first electrode thickness;a second electrode having a second electrode thickness; and{'sup': '2', 'sub': 's', 'a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element, wherein for a particular acoustic coupling coefficient (kt) value and a series resonance frequency (F) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer.'}2. A BAW resonator as claimed in claim 1 , wherein claim 1 , for the particular Fand ktvalue claim 1 , the piezoelectric layer comprising the piezoelectric material doped with at least one rare earth element is thinner than a thickness of the undoped piezoelectric layer.3. A BAW resonator as claimed in claim 1 , wherein claim 1 , for the particular Fand ktvalue claim 1 , the first electrode thickness and the second electrode thickness are each approximately ...

TUNABLE FILTER, RADIO FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS

A tunable filter includes a series-arm resonant circuit, and a parallel-arm resonant circuit. The series-arm resonant circuit includes a group of acoustic wave resonant circuits that have different resonant frequencies, a variable capacitor, and switching circuits. The parallel-arm resonant circuit includes another group of acoustic wave resonant circuits that have different resonant frequencies, a variable capacitor, and switching circuits. For example, the difference in pass-band frequency caused by the difference in resonant frequency between the acoustic wave resonant circuit in the group and the acoustic wave resonant circuit in the other group is greater than the maximum difference in pass-band frequency resulting from the variable range of capacitance of the variable capacitor. 1. A tunable filter having a tunable range of pass-band frequencies comprising:a series-arm resonant circuit; anda parallel-arm resonant circuit,wherein the series-arm resonant circuit and the parallel resonant arm circuit are connected in a ladder network,wherein the series-arm resonant circuit and the parallel-arm resonant circuit each comprise at least one acoustic wave resonator and a variable capacitor, a first acoustic wave resonant circuit and a second acoustic wave resonant circuit, a resonant frequency of the first acoustic wave resonant circuit being different than a resonant frequency of the second acoustic wave resonant circuit, and', 'a switching circuit configured to selectively connect the first acoustic wave resonant circuit or the second acoustic wave resonant circuit to the variable capacitor, the filter having a first pass-band frequency when the variable capacitor is selectively connected to the first acoustic wave resonant circuit and a second pass-band frequency when the variable capacitor is selectively connected to the second acoustic wave resonant circuit,, 'wherein one of the series-arm resonant circuit and the parallel-arm resonant circuit compriseswherein ...

Fbar devices having multiple epitaxial layers stacked on a same substrate

An integrated circuit film bulk acoustic resonator (FBAR) device having multiple resonator thicknesses is formed on a common substrate in a stacked configuration. In an embodiment, a seed layer is deposited on a substrate, and one or more multi-layer stacks are deposited on the seed layer, each multi-layer stack having a first metal layer deposited on a first sacrificial layer, and a second metal layer deposited on a second sacrificial layer. The second sacrificial layer can be removed and the resulting space is filled in with a piezoelectric material, and the first sacrificial layer can be removed to release the piezoelectric material from the substrate and suspend the piezoelectric material above the substrate. More than one multi-layer stack can be added, each having a unique resonant frequency. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate.

ACOUSTIC WAVE DEVICE

An acoustic wave device includes a support substrate, an acoustic reflection film on the support substrate, a piezoelectric layer on the acoustic reflection film, the piezoelectric layer including first and second primary surfaces, and first and second flat-plate electrodes on the first and second primary surfaces of the piezoelectric layer. The acoustic reflection film includes high acoustic impedance layers and low acoustic impedance layers alternately stacked together. At least one layer of the high acoustic impedance and low acoustic impedance layers is a stack of layers of first and second materials having equal or substantially equal acoustic impedances for at least one of longitudinal acoustic impedance and transversal acoustic impedance. The interface between the layers of first and second materials has irregularities. 1. An acoustic wave device comprising:a support substrate;an acoustic reflection film on the support substrate;a piezoelectric layer on the acoustic reflection film, the piezoelectric layer including a first primary surface and a second primary surface opposite to each other; andat least one excitation electrode on at least one of the first and second primary surfaces of the piezoelectric layer; whereinthe acoustic reflection film includes at least one high acoustic impedance layer, which has a relatively high acoustic impedance, and at least one low acoustic impedance layer, which has a relatively low acoustic impedance, the high and low acoustic impedance layers being alternately stacked together;at least one layer of the high acoustic impedance and low acoustic impedance layers is a stack of a layer of first material and a layer of second material, the first and second materials having equal or substantially equal acoustic impedances for at least one of longitudinal acoustic impedance and transversal acoustic impedance; andan interface between the layers of first and second materials includes irregularities.2. The acoustic wave device ...

ELASTIC WAVE DEVICE

An elastic wave device includes a first piezoelectric substrate made of LiNbO, a first band-pass filter provided on the first piezoelectric substrate and including first IDT electrodes, a dielectric layer provided on the first piezoelectric substrate and covering the plurality of first IDT electrodes, a second piezoelectric substrate, a second band-pass filter provided on the second piezoelectric substrate, including second IDT electrodes, and differing from the first band-pass filter in pass band, and a band elimination filter connected to the first band-pass filter. The band elimination filter is provided on a piezoelectric substrate other than the first piezoelectric substrate. 1. An elastic wave device comprising:{'sub': '3', 'a first piezoelectric substrate made of LiNbO;'}a first band-pass filter provided on the first piezoelectric substrate and including a plurality of first IDT electrodes;a dielectric layer provided on the first piezoelectric substrate and covering the plurality of first IDT electrodes;a second piezoelectric substrate;a second band-pass filter provided on the second piezoelectric substrate, including a plurality of second IDT electrodes, and differing from the first band-pass filter in pass band; anda band elimination filter connected to the first band-pass filter; whereinthe band elimination filter is provided on a piezoelectric substrate other than the first piezoelectric substrate.2. The elastic wave device according to claim 1 , whereinthe first band-pass filter includes a first terminal that is one of an input terminal and an output terminal; andthe band elimination filter is connected between the first terminal and a ground potential.3. The elastic wave device according to claim 2 , wherein the band elimination filter includes a plurality of parallel arm resonators connected in parallel between the first terminal and the ground potential.4. The elastic wave device according to claim 2 , whereinthe second band-pass filter includes a ...

METHOD FOR FABRICATING SINGLE CRYSTAL PIEZOELECTRIC RF RESONATORS AND FILTERS WITH IMPROVED CAVITY DEFINITION

A method of fabricating an FBAR filter device including an array of resonators, each resonator comprising a single crystal piezoelectric film sandwiched between a first metal electrode and a second metal electrode, wherein the first electrode is supported by a support membrane over an air cavity, the air cavity embedded in a silicon dioxide layer over a silicon handle, with through-silicon via holes through the silicon handle and into the air cavity, the side walls of said air cavity in the silicon dioxide layer being defined by perimeter trenches that are resistant to a silicon oxide etchant. 1. A method of fabricating an FBAR filter device comprising an array of resonators , each resonator comprising a single crystal piezoelectric film sandwiched between a first metal electrode and a second metal electrode , wherein the first electrode is supported by a support membrane over an air cavity , the air cavity embedded in a silicon dioxide layer over a silicon handle , with through-silicon via holes through the silicon handle and into the air cavity , the side walls of said air cavity in the silicon dioxide layer being defined by perimeter trenches that are resistant to a silicon oxide etchant , comprising the stages of:A. Fabricating a support membrane over a silicon dioxide box on a silicon handle, having through support membrane filled barriers that traverse the silicon oxide layer, and wherein the support membrane is coated with at least a bonding layer of a first metal electrode coupled to the support membrane by an adhesion layer;B. Fabricating a piezoelectric layer coupled to a detachable carrier substrate and coated with at least a bonding layer of the first metal electrode coupled to the piezoelectric film by an adhesion layer;C. Bonding the support membrane to the piezoelectric film by bonding the two bonding layers together to sandwich the first metal electrode between the piezoelectric film and the support membrane;D. Processing the piezoelectric layer ...

SINGLE CRYSTAL PIEZOELECTRIC RF RESONATORS AND FILTERS WITH IMPROVED CAVITY DEFINITION

An FBAR filter device comprising an array of resonators, each resonator comprising a single crystal piezoelectric layer sandwiched between a first and a second metal electrode, 1. An FBAR filter device comprising an array of resonators , each resonator comprising a single crystal piezoelectric film sandwiched between a first and a second metal electrode , wherein the first electrode is supported by a support membrane over an air cavity , the air cavity being embedded in a silicon dioxide layer over a silicon handle , with through-silicon via holes through the silicon handle and into the air cavity , the side walls of said air cavity in the silicon dioxide layer being defined by barriers of a material that is resistant to silicon oxide etchants , and wherein the interface between the support membrane and the first electrode is smooth and flat.2. The FBAR filter device of wherein the material that is resistant to silicon dioxide etchant is silicon nitride claim 1 , and the barriers are filler filled trenches having a silicon nitride liner.3. The FBAR filter device of wherein the filler is selected from the group comprising polysilicon and silicon nitride.4. The FBAR filter device of wherein the single crystal piezoelectric layer is selected from the group comprising:{'sub': x', '(1-x)', '3, 'BaSrTiO(BST);'}{'sub': x', '(1-x)', 'x', '(1-x), 'AlGaN, ScAlN;'}{'sub': '3', 'AlN, LiNbOand'}{'sub': '3', 'LiTaOin desirable orientations.'}5. The FBAR filter device of wherein the single crystal piezoelectric membrane is selected from the group comprising:{'sub': x', '(1-x)', '3, '<111> BaSrTiO(BST);'}{'sub': x', '(1-x), 'AlGaN with strong C axis texture{'sub': x', '(1-x), 'ScAlN with strong C axis texture;'}{'sub': '3', 'AlN with strong C axis texture: LiNbOat YX1/36° and'}{'sub': '3', 'LiTaOat YX1/42° to YX1/52°.'}6. The FBAR filter device of wherein the single crystal piezoelectric layer has a thickness of less than 1.5 microns.7. The FBAR filter device of wherein the support ...

Two-stage lateral bulk acoustic wave filter

Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack.

5G n79 WI-FI ACOUSTIC TRIPLEXER CIRCUIT

An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF triplexer circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member ...

ACOUSTIC WAVE FILTER AND DUPLEXER

An acoustic wave filter includes series resonators and parallel resonators that have a piezoelectric film on an identical substrate and have a lower electrode and an upper electrode, wherein: one of the series resonators and the parallel resonators have a temperature compensation film on a face of the lower electrode or the upper electrode that is opposite to the piezoelectric film in a resonance region, the compensation film having an elastic constant of a temperature coefficient of which sign is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric film; and the other have an added film on the same side as the temperature compensation film on the lower electrode side or the upper electrode side compared to the piezoelectric film in the resonance region in the one of the series resonators and the parallel resonators.

Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same

A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.

BULK ACOUSTIC WAVE RESONATOR STRUCTURE FOR SECOND HARMONIC SUPPRESSION

Embodiments of this disclosure relate to acoustic wave filters configured to filter radio frequency signals. An acoustic wave filter includes a first bulk acoustic wave resonator on a substrate, a second bulk acoustic wave resonator on the substrate, a conductor electrically connecting the first bulk acoustic wave resonator in anti-series with the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate. The air gap can reduce parasitic capacitance associated with the conductor. Acoustic wave filters disclosed herein can suppress a second harmonic. 1. An acoustic wave filter with second harmonic suppression , the acoustic wave filter comprising:a first bulk acoustic wave resonator on a substrate;a second bulk acoustic wave resonator on the substrate;a conductor electrically connecting the first bulk acoustic wave resonator in anti-series with the second bulk acoustic wave resonator; andan air gap positioned between the conductor and a surface of the substrate, the acoustic wave filter configured to filter a radio frequency signal.2. The acoustic wave filter of wherein the first bulk acoustic wave resonator is a first film bulk acoustic wave resonator claim 1 , and the second bulk acoustic wave resonator is a second film bulk acoustic wave resonator.3. The acoustic wave filter of wherein the air gap is an air cavity for the first film bulk acoustic wave resonator and the second film bulk acoustic wave resonator.4. The acoustic wave filter of wherein the air gap is an air cavity in the substrate.5. The acoustic wave filter of wherein the air gap is an air cavity positioned between a layer of piezoelectric material and the substrate.6. The acoustic wave filter of wherein the air gap is an air bridge over the substrate.7. The acoustic wave filter of wherein the air gap is an air bridge positioned between a layer of piezoelectric material and the conductor.8. The acoustic wave filter of further comprising a ...

Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

METHOD FOR FABRICATING RESONATOR STRUCTURE AND RESONATOR STRUCTURE

Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer. 1. A method for manufacturing a coupled resonator structure , comprising:processing a first wafer to form a processed first wafer comprising a first piezoelectric material;processing a second wafer to form a processed second wafer comprising a second piezoelectric material;singulating the first wafer to form at least one singulated wafer chip;bonding the at least one singulated wafer chip to the second wafer to form a joint wafer; andprocessing the joint wafer to form a resonator structure comprising a first resonator including the first piezoelectric material and a second resonator including the second piezoelectric material such that the first and second resonators are acoustically coupled with each other.2. The method of claim 1 , wherein the processing the second wafer comprises forming the second resonator on the second wafer.3. The method of claim 1 , wherein the second piezoelectric material comprises aluminum nitride or scandium aluminum nitride.4. The method of claim 1 , wherein the second piezoelectric material has a lower piezoelectric coupling constant than the first piezoelectric material.5. The method of claim 1 , wherein the processed second wafer comprises an acoustic termination at a first side thereof claim 1 , and the bonding is performed such that the first side of the second wafer faces the singulated wafer chip.6. A method for manufacturing a resonator structure claim 1 , comprising:processing a first wafer to form a processed first wafer comprising a first piezoelectric material;processing a second wafer to form a processed second wafer comprising an acoustic termination at a first side thereof;singulating the first wafer to form at least one singulated wafer chip;bonding the at least one singulated wafer chip to the second wafer such that the ...

TRANSVERSE BULK ACOUSTIC WAVE FILTER

A micro-transfer printable transverse bulk acoustic wave filter comprises a piezoelectric filter element having a top side, a bottom side, a left side, and a right side disposed over a sacrificial portion on a source substrate. A top electrode is in contact with the top side and a bottom electrode is in contact with the bottom side. A left acoustic mirror is in contact with the left side and a right acoustic mirror is in contact with the right side. The thickness of the transverse bulk acoustic wave filter is substantially less than its length or width and its length can be greater than its width. The transverse bulk acoustic wave filter can be disposed on, and electrically connected to, a semiconductor substrate comprising an electronic circuit to control the transverse bulk acoustic wave filter and form a composite heterogeneous device that can be micro-transfer printed. 1. A transverse bulk acoustic wave filter , comprising:a piezoelectric filter element having a top side, a bottom side, a left side, and a right side, wherein the right side is opposed to the left side and the bottom side is opposed to the top side;a top electrode in contact with the top side;a bottom electrode in contact with the bottom side;a left acoustic mirror in contact with the left side; anda right acoustic mirror in contact with the right side.2. The transverse bulk acoustic wave filter of claim 1 , wherein the piezoelectric filter element has a front side and a back side claim 1 , and comprising:a front acoustic mirror in contact with the front side; anda back acoustic mirror in contact with the back side.3. The transverse bulk acoustic wave filter of claim 1 , comprising:a bottom acoustic mirror in contact with the bottom electrode and, optionally, in contact with at least a portion of the bottom side.4. The transverse bulk acoustic wave filter of claim 1 , comprising:a top acoustic mirror in contact with the top electrode and, optionally, in contact with at least a portion of the top ...

BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURE

A bulk acoustic wave (BAW) resonator comprises: a first electrode; a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side; a piezoelectric layer disposed between the first and second electrodes, and an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the acoustic resonator; a bridge adjacent to a termination of the active area of the BAW resonator; and a discontinuity disposed in the bridge. 1. A bulk acoustic wave (BAW) resonator , comprising:a first electrode;a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side;a piezoelectric layer disposed between the first and second electrodes, andan acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the acoustic resonator;a bridge adjacent to a termination of the active area of the BAW resonator; anda discontinuity disposed in the bridge.2. The BAW resonator as claimed in claim 1 , wherein the bridge comprises a plurality of layers claim 1 , and the discontinuity in the bridge is in one of the layers in the bridge.3. The BAW as claimed in claim 2 , wherein the one layer is a passivation layer disposed over the second electrode.4. The BAW resonator as claimed in claim 2 , wherein the one layer is a part of the second electrode.5. The BAW resonator as claimed in claim 2 , wherein the discontinuity comprises a recess in the layer.6. The BAW resonator as claimed in claim 5 , wherein a material having a different acoustic impedance than an acoustic impedance of the layer is disposed in the layer.7. The BAW resonator ...

Coupled resonator filter with embedded border ring

A coupled resonator filter includes a first resonator, a second resonator, one or more intervening layers, a first border ring, and a second border ring. The first resonator includes a first piezoelectric layer and a first electrode in contact with the first piezoelectric layer. The second resonator includes a second piezoelectric layer and a second electrode in contact with the second piezoelectric layer. The one or more intervening layers are between the first resonator and the second resonator and acoustically couple the first resonator and the second resonator. The first border ring is on the first electrode. The second border ring is on the second electrode. By providing both the first border ring and the second border ring, spurious modes in the coupled resonator filter may be suppressed, thereby improving the performance thereof.

Electrical resonator

An acoustic resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG).

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR PACKAGE AND METHOD

Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a surface of the piezoelectric plate. The first conductor pattern includes interleaved fingers of an interdigital transducer disposed on the diaphragm, and a first plurality of contact pads. A second conductor pattern is formed on a surface of a base, the second conductor pattern including a second plurality of contact pads. Each pad of the first plurality of contact pads is directly bonded to a respective pad of the second plurality of contact pads. A ring-shaped seal is form between a perimeter of the piezoelectric plate and a perimeter of the base. 1. An acoustic resonator device comprising: a substrate having front and back surfaces, a cavity formed in the front surface;', 'a piezoelectric plate having front and back surfaces, the back surface attached to the front surface of the substrate except for a portion of the piezoelectric plate that forms a diaphragm spanning the cavity;', an interdigitated transducer (IDT), interleaved fingers of the IDT disposed on the diaphragm, and', 'a first plurality of contact pads;, 'a first conductor pattern formed as one or more conductor layers on the front surface of the piezoelectric plate, the first conductor pattern including], 'an acoustic resonator chip comprising a base having front and back surfaces; and', 'a second plurality of contact pads; and', 'a second conductor pattern formed on the back surface of the base, the second conductor pattern including], 'an interposer comprisinga ring-shaped seal connecting a perimeter of the piezoelectric plate to a perimeter of the base, whereineach contact pad of the first plurality of contact pads is directly bonded to a respective contact pad of the second plurality of contact pads.2. The acoustic resonator device of claim 1 , whereinthe cavity ...

Acoustic resonator with electrical interconnect disposed in underlying dielectric

An apparatus comprises a substrate, a dielectric disposed on the semiconductor substrate, an acoustic resonator disposed on the dielectric, and an electrical interconnect disposed in the dielectric and configured to transmit an electrical signal to or from at least one electrode of the acoustic resonator through a signal path disposed at least partially below a level of the acoustic resonator.

BULK ACOUSTIC WAVE RESONATOR HAVING OPENINGS IN AN ACTIVE AREA AND A PILLAR BENEATH THE OPENING

A bulk acoustic wave (BAW) resonator is disclosed. The BAW resonator includes: a lower electrode; a piezoelectric layer disposed over the lower electrode; and an upper electrode over the piezoelectric layer. An opening having a first area exists in and extends completely through the upper electrode. The BAW resonator also includes a substrate disposed below the lower electrode; a cavity; and a pillar disposed in the cavity and extending to contact a portion of the lower electrode disposed beneath the opening. The pillar has a second area that is less than the first area. There are no electrical connections that extend across the opening from one side to another. 1. A bulk acoustic wave (BAW) resonator , comprising:a lower electrode;a piezoelectric layer disposed over the lower electrode;an upper electrode disposed over the piezoelectric layer, wherein an opening having a first area exists in and extends completely through the upper electrode;a substrate disposed below the lower electrode;a cavity; anda pillar disposed in the cavity and extending to contact a portion of the lower electrode located beneath the opening, the pillar having a second area that is less than the first area, wherein there are no electrical connections that extend across the opening from one side to another.2. The BAW resonator of claim 1 , further comprising a frame element disposed over the upper electrode claim 1 , wherein the frame element is disposed adjacent to a perimeter of the opening.3. The BAW resonator of claim 2 , wherein the frame element is at least one of a raised frame element claim 2 , a recessed frame element claim 2 , and a cantilevered portion.4. The BAW resonator of claim 1 , wherein a gap (G) exists between an inner edge of a cantilevered portion and an outer edge of the pillar claim 1 , or between an inner edge of the upper electrode and the outer edge of the pillar.5. The BAW resonator of claim 1 , wherein the pillar is a first pillar claim 1 , and the BAW resonator ...

Front end module

A front end module includes: a first filter configured to operate as a bandpass filter, and to support communications in a 4.4 GHz to 5.0 GHz band; and a second filter configured to operate as a high-pass filter, and to support communications in a 5.15 GHz to 5.835 GHz band.

BULK ACOUSTIC WAVE RESONATOR HAVING A PLURALITY OF COMPENSATION LAYERS AND DUPLEXER USING SAME

A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification. 1. A film bulk acoustic wave resonator (BAWR) comprising:a substrate;a bulk acoustic resonance unit comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode;a first compensation layer disposed above the bulk acoustic resonance unit; anda property compensation layer disposed above the first compensation layer,wherein the property compensation layer is disposed above the edges of a surface of the compensation layer so that a remaining portion of the surface between the edges is not covered by the property compensation layer.2. The BAWR of claim 1 , wherein the first compensation layer adjusts a temperature coefficient of the bulk acoustic wave resonance unit.3. The BAWR of claim 1 , wherein the first compensation layer comprises a silicon oxide-based material claim 1 , a silicon nitride-based material claim 1 , silicon oxide doped with an impurity claim 1 , or silicon nitride doped with the impurity.4. The BAWR of claim 3 , wherein the impurity comprises at least one element selected from the group consisting of arsenic (As) claim 3 , antimony (Sb) claim 3 , phosphorus (P) claim 3 , boron (B) claim 3 , germanium (Ge) claim 3 , silicon (Si) claim 3 , and aluminum (Al.).5. The BAWR of claim 1 , further comprising:a second compensation layer disposed below the second ...

PIEZOELECTRIC TRANSDUCER

A piezoelectric transducer for measuring a force includes a base element; a pre-loading element; at least one effective main seismic mass aggregation of pre-loaded parts capable of producing the force when being accelerated; a main piezoelectric ceramic element including a first piezoelectric ceramic; at least one compensation seismic mass aggregation of pre-loaded parts capable of producing a compensation force when being accelerated; a compensation piezoelectric ceramic element including a second piezoelectric ceramic. The first piezoelectric ceramic has a thermal sensitivity shift smaller than the second piezoelectric ceramic. The main piezoelectric ceramic element is oriented with respect to the force to be measured and the compensation piezoelectric ceramic element is oriented with respect to the compensation force such that the main electric charge and the compensation electric charge are opposite in polarity. 1. A piezoelectric transducer for measuring a force comprisinga base element;a pre-loading element;at least one effective main seismic mass means capable of producing said force when being accelerated, said effective main seismic mass means being joined by said pre-load element directly or indirectly against said base element;a main piezoelectric ceramic element comprising first piezoelectric ceramic, said first piezoelectric ceramic is capable of generating a main electric charge when subjected to said force, said main piezoelectric ceramic element being joined by said pre-load element directly or indirectly against said effective main seismic mass means;at least one compensation seismic mass means capable of producing a compensation force when being accelerated, said compensation seismic mass means being joined by said pre-load element directly or indirectly against said base element;a compensation piezoelectric ceramic element comprising second piezoelectric ceramic, said second piezoelectric ceramic is capable of generating a compensation electric ...

5.9 GHz C-V2X AND DSRC ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Filter including acoustic wave resonator

A filter includes: series resonators disposed between an input terminal and an output terminal; and shunt resonators disposed at different nodes between the input terminal and the output terminal, wherein a resonance frequency and an antiresonance frequency of at least one series resonator among the series resonators are respectively located within a reference frequency range of a resonance frequency and an antiresonance frequency of the shunt resonators.

FILTER DEVICE, RADIO-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS

A filter device according to an embodiment of the present disclosure includes a first filter and a second filter that are connected in parallel between a first terminal and a second terminal. The first filter includes multiple series arm resonators. The series arm resonators are disposed in series in a path from the first terminal via the first filter to the second terminal. The series arm resonators include a first series arm resonator and a second series arm resonator. Under a condition that a value obtained by dividing a difference between an antiresonance frequency and a resonance frequency of each series arm resonator by the resonance frequency is defined as a fractional bandwidth, a first fractional bandwidth of the first series arm resonator is different from a second fractional bandwidth of the second series arm resonator. 1. A filter device having a first passband , the filter device comprising:a first filter and a second filter connected in parallel with each other between a first terminal and a second terminal, whereinthe first passband of the filter device includes at least part of a second passband of the first filter and at least part of a third passband of the second filter,the second passband and the third passband being narrower than the first passband of the filter device,the third passband having a center frequency higher than a center frequency of the second passband,the first filter includes a plurality of series arm resonators connected in series with each other in a path from the first terminal via the first filter to the second terminal,the plurality of series arm resonators include a first series arm resonator and a second series arm resonator, andunder a condition that a value obtained by dividing a difference between an antiresonance frequency and a resonance frequency of each series arm resonator by the resonance frequency is defined as a fractional bandwidth, a first fractional bandwidth of the first series arm resonator is different ...

P&A SETTING WITH EXOTHERMIC MATERIAL

A method of plugging a hydrocarbon well includes deploying a downhole tool to remove at least a portion of a casing at a section of well to be plugged. Deploying a blocking device downhole to block a bottom of the section of well to be plugged. Deploying a plugging material downhole onto the blocking device to fill an area to be plugged. Deploying an exothermic fluid downhole, wherein activation of the exothermic material liquefies the plugging material. Allowing the plugging material and the exothermic fluid to solidify form a cast-in-place plug that fills the section of well to be plugged. 1. A through-tube method of plugging a hydrocarbon well , comprising:a) deploying a downhole tool downhole to at least partially remove a tubular or a casing at a section of well to be plugged;b) deploying a blocking device downhole to block a bottom of said section of well to be plugged;c) deploying a plugging material downhole onto said blocking device to fill said section of well to be plugged;d) deploying an exothermic fluid downhole to heat and form a liquefied plugging material; and,e) allowing the liquefied plugging material to solidify and fill said section of well to be plugged.2. The method of claim 1 , wherein the downhole tool is selected from the group consisting of: a cutter claim 1 , a section mill claim 1 , perforate tool claim 1 , perforate and wash tool claim 1 , laser claim 1 , and propellant.315. The method of claim 1 , wherein about to meters section of casing is at least partially removed.4. The method of claim 1 , wherein the plugging material is a bismuth alloy claim 1 , aluminum claim 1 , or lead.5. The method of wherein the exothermic material is selected from the group consisting of: epoxies claim 1 , resins claim 1 , hardener claim 1 , hydrogen peroxide claim 1 , yeast claim 1 , cement claim 1 , and potassium chloride.6. The method of claim 1 , wherein the plugging material has a higher density than the exothermic fluid.7. The method of claim 1 , ...

ALUMINUM NITRIDE FILM, PIEZOELECTRIC DEVICE, RESONATOR, FILTER, AND MULTIPLEXER

Provided is an aluminum nitride film in which, aluminum nitride crystal grains containing a metal element differing from aluminum and substituting for aluminum are main crystal grains of a polycrystalline film formed of crystal grains, and a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of first and second regions corresponding to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film. 1. An aluminum nitride film , whereinaluminum nitride crystal grains that contain a metal element, which is different from aluminum and substitutes for aluminum, are main crystal grains of a polycrystalline film formed of a plurality of crystal grains, anda concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of a first region and a second region, which correspond to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film, is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film.2. The aluminum nitride film according to claim 1 , whereinthe metal element is scandium.3. The aluminum nitride film according to claim 1 , whereinthe aluminum ...

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR

Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a surface of the piezoelectric plate. The first conductor pattern includes interleaved fingers of an interdigital transducer disposed on the diaphragm, and a first plurality of contact pads. A second conductor pattern is formed on a surface of a base, the second conductor pattern including a second plurality of contact pads. Each pad of the first plurality of contact pads is directly bonded to a respective pad of the second plurality of contact pads. A ring-shaped seal is form between a perimeter of the piezoelectric plate and a perimeter of the base. 1. A method of fabricating an acoustic resonator device , comprising: bonding a back surface of a piezoelectric plate to a substrate;', 'forming a cavity in the substrate such that a portion of the piezoelectric plate forms a diaphragm spanning the cavity; and', an interdigital transducer (IDT), interleaved fingers of the IDT are disposed on the diaphragm, and', 'a first plurality of contact pads;, 'forming a first conductor pattern as one or more conductor layers on a front surface of the single-crystal piezoelectric plate, the first conductor pattern including], 'fabricating an acoustic resonator chip, comprising 'a second plurality of contact pads;', 'forming a second conductor pattern on a back surface of a base, the second conductor pattern includingattaching the back surface of the base to the front surface of the piezoelectric plate by directly bonding each contact pad of the first plurality of contact pads to a respective contact pads of the second plurality of contact pads; andforming a ring-shaped seal between a perimeter of the piezoelectric plate and a perimeter of the base.2. The method of claim 1 , whereinthe cavity is a hole passing through a thickness of the substrate, ...

ACOUSTIC RESONATOR AND ACOUSTIC RESONATOR FILTER INCLUDING THE SAME

An acoustic resonator includes a substrate, and a resonant portion comprising a center portion in which a first electrode, a piezoelectric layer and a second electrode are sequentially laminated on the substrate, and an extending portion disposed along a periphery of the center portion, wherein the resonant portion is configured to have an asymmetrical polygonal plane, an insertion layer is disposed below the piezoelectric layer in the extending portion, and the piezoelectric layer is configured to have a top surface which is raised to conform to a shape of the insertion layer, and the insertion layer is configured to have an asymmetrical polygonal shape corresponding to a shape of the extending portion. 1. An acoustic resonator comprising:a substrate; anda resonant portion comprising a center portion in which a first electrode, a piezoelectric layer and a second electrode are sequentially laminated on the substrate, and an extending portion disposed along a periphery of the center portion,wherein the resonant portion is configured to have an asymmetrical polygonal plane,an insertion layer is disposed below the piezoelectric layer in the extending portion, and the piezoelectric layer is configured to have a top surface which is raised to conform to a shape of the insertion layer, andthe insertion layer is configured to have an asymmetrical polygonal shape corresponding to a shape of the extending portion.2. The acoustic resonator of claim 1 , wherein the insertion layer is configured to have an inclined surface which has a thickness that is increased as a distance of the insertion layer from the center portion increases claim 1 , andthe piezoelectric layer includes an inclined portion that is disposed on the inclined surface.3. The acoustic resonator of claim 1 , wherein the insertion layer is configured to have at least a portion which is disposed below the first electrode or the second electrode or between the first electrode and the piezoelectric layer.4. The ...

Acoustic mirror with improved reflection

An acoustic mirror for a BAW resonator or a stacked crystal filter is disclosed, comprising at least one layer pair of λ/4- or 3λ/4 layers, whereby each layer pair comprises a first layer with low acoustic impedance and a second layer with higher acoustic impedance relative to the above and a low-k dielectric is selected as material with low acoustic impedance.

System and method for a radio frequency filter

滤波器封装元件

滤波器封装元件，包括：一组压电薄膜，其包括一系列混合单晶，每个混合单晶包括夹裹在一系列下电极和一系列上电极之间的掺杂氮化铝，其中上电极包括金属层以及在金属层上方的硅膜，硅膜上方具有腔体；其中，一系列下电极连接至一转接板，一系列下电极和转接板之间具有第一腔体；其中，一系列硅膜具有既定的厚度，与一系列上层腔体一起结合在一系列上电极上方，每个上层腔体都位于该一系列硅膜的其中一个硅膜与共同硅盖之间，并与位列其下方的硅膜、上电极、压电薄膜居中对齐，所述上层腔体四周为包括二氧化硅的侧壁；其中，各个压电薄膜、其上电极以及上方的硅膜通过绝缘材料与相邻的压电薄膜、上电极以及硅膜分隔开来。

制造具改进腔体的单晶压电射频谐振器和滤波器的方法

一种制造FBAR滤波器装置的方法，FBAR滤波器装置包括一个谐振器阵列，每个谐振器包括夹在第一和第二电极之间的单晶压电薄膜，其中第一电极由空气腔体上的支撑薄膜支撑，所述空气腔体被嵌入硅柄上的二氧化硅层中，具有穿过所述硅柄并进入空气腔体中的硅通孔，在二氧化硅层中的所述空气腔体的侧壁被能抵抗二氧化硅蚀刻剂的边界沟槽所限定。

可调谐谐振元件、滤波器电路和方法

本公开的实施例涉及可调谐谐振元件、滤波器电路和方法。提供了一种用于滤波器的谐振器元件。谐振器元件包括被声学耦合至第二谐振器或者第三谐振器或者两者的第一谐振器。第一谐振器具有用于并入滤波器结构中的端子。调谐电路被耦合至第二谐振器或者第三谐振器或者两者，以使能对谐振器元件的调谐。调谐电路包括可变电容器和电感器。

탄성파 장치, 멀티플렉서, 고주파 프론트 엔드 회로 및 통신 장치

고차 모드에 의한 불요파를 억제할 수 있으며, 또한 고차 모드의 주파수의 변동을 억제할 수 있는 탄성파 장치를 제공한다. 탄성파 장치(1)는 지지기판(2)과, 지지기판(2) 상에 마련되어 있는 고음속막(3)과, 고음속막(3) 상에 마련되어 있는 저음속막(4)과, 저음속막(4) 상에 마련되어 있는 압전체층(5)과, 압전체층(5) 상에 마련되어 있는 IDT전극(6)을 포함한다. 고음속막(3)을 전파하는 벌크파의 음속이 압전체층(5)을 전파하는 탄성파의 음속보다도 높으며, 저음속막(4)을 전파하는 벌크파의 음속이 압전체층(5)을 전파하는 탄성파의 음속보다도 낮고, 고음속막(3)이 SiN x 로 이루어지며, x＜0.67이다.