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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 144. Отображено 100.
09-01-2020 дата публикации

Methods of forming group III piezoelectric thin films via sputtering

Номер: US20200013948A1
Автор: Moe Craig, SHEALY Jeffrey B., Winters Mary
Принадлежит:

A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD). 1. A method of forming a piezoelectric thin film , the method comprising:heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate; andsputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).2. The method of wherein the target comprises a first target including a first element from Group III and a second target including a second element from Group III or a single composite target including the first and second Group III elements claim 1 , wherein sputtering the Group III element from the target comprises:sputtering the first element from Group III onto the substrate and sputtering the second element from Group III onto the substrate to provide the piezoelectric thin film.3. The method of wherein the first element from Group III comprises Aluminum (Al) and the second element from Group III comprises Scandium (Sc).4. The method of further comprising:sputtering the Group III element from the target onto the substrate ...

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Номер записи: 1
18-01-2018 дата публикации

WAFER SCALE PACKAGING

Номер: US20180019158A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures. 119-. (canceled)20. A method of wafer scale packaging Group III-Nitride containing devices , the method comprising:providing a substrate member having a surface region;forming a thickness of Group III-Nitride material overlying the surface region;forming an insulating material overlying a portion of the thickness of Group III-Nitride material;forming a contact region to expose a portion of the thickness of the Group III-Nitride material; andforming a pillar structure comprising a copper material within the contact region.21. The method of further comprising forming a thickness of solder material overlying the pillar structure to cause formation of a solder bump; andbonding the solder bump to a contact member on a substrate structure.22. The method of wherein the Group III-Nitride material is deposited by LPCVD; andfurther comprising using dichlorosilane (DCS), provided with or without Ammonia, to clean and prepare a surface for single crystal growth.23. The method of wherein the Group III-Nitride material is selected from at least one of a single crystal oxide including a high K dielectric claim 20 , ZnO claim 20 , or MgO.24. The method of wherein the Group III-Nitride material is characterized by X-ray diffraction with clear peak at a detector angle (2-θ) ...

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Номер записи: 2
17-01-2019 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

Номер: US20190020324A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, Gibb Shawn R., HODGE Michael D., LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator or filter device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside metal electrode overlying the top piezoelectric surface region;forming a topside micro-trench within a portion of the piezoelectric layer;forming a backside metal electrode underlying or in proximity of the bottom piezoelectric surface region within the substrate backside cavity region, the backside metal electrode being electrically coupled to a micro-via configured within the topside micro-trench; andremoving a portion of the piezoelectric layer to form a first topside groove on the top piezoelectric surface region.2. The method of wherein the piezoelectric layer comprises an essentially single crystal material or a ...

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Номер записи: 3
17-01-2019 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

Номер: US20190020325A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, Gibb Shawn R., HODGE Michael D., LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region characterized by a cavity geometric area;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside energy confinement structure overlying the top piezoelectric surface region, the topside energy confinement structure being characterized by a topside structure geometric area and a topside structure perimeter, the topside energy confinement structure having at least one portion removed forming a topside structure break region;forming a topside metal electrode overlying the top piezoelectric surface region and within the topside energy confinement structure, the topside metal electrode being characterized by a topside electrode geometric area; andforming a topside sandbar structure overlying the top ...

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Номер записи: 4
17-01-2019 дата публикации

5.2 GHz Wi-Fi COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190020327A1
Автор: AICHELE David M., Gibb Shawn R., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 5
17-01-2019 дата публикации

FRONT END MODULE FOR 5.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190020328A1
Автор: AICHELE David M., Gibb Shawn R., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6 GHz PA, a 5.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 5.6 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node;a 5.6 GHz resonator electrically coupled to the PA; anda diversity switch electrically coupled the 5.6 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 5.6 GHz power amplifier.3. The device of wherein the 5.6 GHz BAW resonator comprises a 5.6 GHz bulk acoustic wave (BAW) resonator.4. The device of wherein the diversity switch comprises a single pole two throw (SP2T) switch.5. The device of further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node.6. The device of wherein the LNA comprises a bypassable LNA.7. The device of further comprising a DC power detector having a voltage output claim 1 , the DC power detector being electrically coupled to the PA.8. The device of further comprising an RF power detector having an RF output from a directional coupler claim 1 , the RF power detector being electrically coupled to the PA.9. A 5.6 GHz front end module (FEM) device claim 1 , the device comprising:a power amplifier ...

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Номер записи: 6
28-01-2016 дата публикации

SINGLE CRYSTAL ACOUSTIC RESONATOR AND BULK ACOUSTIC WAVE FILTER

Номер: US20160028367A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures. 1. A wafer scale package apparatus , the apparatus comprising:a partially completed semiconductor substrate, the semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each of the devices having a first electrode member, a second electrode member, and an overlying passivation material;for at least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, the repassivation material having a first region exposing the first electrode member and a second region exposing the second electrode member;an under metal material overlying the repassivation material and covering the first region and the second region such that the first electrode member and the second electrode member are each in electrical and physical contact with the under metal material;a copper pillar interconnect structure configured to fill the first region and the second region using a deposition process to form a first copper pillar structure overlying the first electrode member and a second copper pillar structure overlying the second electrode member; anda first solder bump structure overlying the first copper pillar structure and a second solder ...

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Номер записи: 7
28-01-2016 дата публикации

WAFER SCALE PACKAGING

Номер: US20160028368A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures. 1. A wafer scale package apparatus , the apparatus comprising:a partially completed semiconductor substrate, the semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each of the devices having a first electrode member, a second electrode member, and an overlying passivation material;for at least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, the repassivation material having a first region exposing the first electrode member and a second region exposing the second electrode member;an under metal material overlying the repassivation material and covering the first region and the second region such that the first electrode member and the second electrode member are each in electrical and physical contact with the under metal material;a copper pillar interconnect structure configured to fill the first region and the second region using a deposition process to form a first copper pillar structure overlying the first electrode member and a second copper pillar structure overlying the second electrode member; anda first solder bump structure overlying the first copper pillar structure and a second solder bump structure overlying the second copper pillar ...

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Номер записи: 8
24-01-2019 дата публикации

MOBILE COMMUNICATION DEVICE CONFIGURED WITH A SINGLE CRYSTAL PIEZO RESONATOR STRUCTURE

Номер: US20190028259A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device. 1. A method of using a communication system comprising:providing a mobile communication system comprising: an rf transmit module coupled to the processing device and configured on a transmit path, wherein the rf transmit module includes a transmit filter having one or more diplexer filter devices, each of the one or more diplexer filter devices comprising a acoustic resonator device;', 'an rf receive module coupled to the processing device and configured on a receive path, wherein the rf receive module includes a receive filter;, 'a filter diplexer module comprising'}a power amplifier module coupled to the processing device and the filter diplexer module, the power amplifier module being configured on the transmit path and the receive path, wherein the power amplifier module comprises a plurality of communication bands, each communication band having a power amplifier, wherein the one or more diplexer filter devices are configured to one or more of the plurality of communication bands;a band-to-band isolation between any pair of adjacent communication bands in the plurality of communication bands characterizing the transmit filter such that a difference between a pass band to reject band as measured in relative decibels (dBc) is greater than 10 dBc and less than 100 dBc;an insertion loss characterizing the transmit filter, the insertion loss being less than 3 dB and greater than 0.5 dB; anda center frequency configured to define the pass band; a substrate having a surface region;', 'a first ...

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Номер записи: 9
04-02-2016 дата публикации

MOBILE COMMUNICATION DEVICE CONFIGURED WITH A SINGLE CRYSTAL PIEZO RESONATOR STRUCTURE

Номер: US20160036580A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device. 1. A mobile communication system comprising:a housing comprising an interior region and an exterior region;a display coupled to the housing;a processing device provided within the interior region of the housing;an rf transmit module coupled to the processing device, and configured on a transmit path;an rf receive module coupled to the processing device, and configured on a receive path;an antenna coupled to the rf transmit module and the rf receive module;an antenna control device coupled to the receive path and the transmit path, and configured to select either the receive path or the transmit path;a receive filter provided within the rf receive module; anda transmit filter provided within the rf transmit module, the transmit filter having a diplexer filter comprising a single crystal acoustic resonator device;a band-to-band isolation characterizing the transmit filter such that a difference between a pass band to reject band as measured in relative decibels (dBc) is greater than 10 dBc and less than 100 dBc;an insertion loss characterizing the transmit filter, the insertion loss being less than 3 dB and greater than 0.5 dB; anda center frequency configured to define the pass band.2. The system of wherein the single crystal acoustic resonator device comprising:a substrate having a surface region;a first electrode material coupled to a portion of the substrate;{'sup': 12', '2, 'a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed ...

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Номер записи: 10
17-02-2022 дата публикации

RF BAW RESONATOR FILTER ARCHITECTURE FOR 6.5GHZ WI-FI 6E COEXISTENCE AND OTHER ULTRA-WIDEBAND APPLICATIONS

Номер: US20220052665A1
Автор: AICHELE David M., Granado Guillermo Moreno, HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor. 1. A multi-stage matching network filter circuit device , the device comprising:a bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground connection region;a first matching network circuit coupled to the input node;a second matching network circuit coupled to the output node; anda ground connection network circuit coupled to the ground connection region and a circuit ground node.2. The device of wherein the first matching network circuit or the second matching network circuit comprises one or more series inductors and one or more grounded inductors configured as an inductive ladder network.3. The device of wherein the inductive ladder network includes one or more LC tanks claim 2 , wherein each of the one or more LC tanks is coupled to one of the one or more series inductors.4. The device of wherein the inductive ladder network includes one or more shunt capacitors claim 2 , wherein each of the one or more shunt capacitors is coupled between one of the one or more grounded inductors and the circuit ground node.5. The ...

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Номер записи: 11
31-01-2019 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

Номер: US20190036504A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, Gibb Shawn R., HODGE Michael D., LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator or filter device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming topside metal electrode overlying a portion of the top piezoelectric surface region, the topside metal electrode having a topside electrode surface region, a topside electrode perimeter, and one or more topside electrode edges;forming a topside pillar structure overlying a portion of the top piezoelectric surface region within a vicinity of the topside metal electrode and outside of the topside metal electrode perimeter;forming a topside micro-trench within a portion of the piezoelectric layer;forming a backside metal electrode underlying or in proximity of the bottom piezoelectric surface region within the substrate backside cavity region; ...

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Номер записи: 12
31-01-2019 дата публикации

FRONT END MODULE FOR 5.2 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190036592A1
Автор: AICHELE David M., Gibb Shawn R., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A front end module (FEM) for a 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.2 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.2 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.2 GHz PA, a 5.2 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 5.2 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node;a 5.2 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA; anda diversity switch electrically coupled the 5.2 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 5.2 GHz power amplifier.3. The device of wherein the 5.2 GHz BAW resonator comprises a 5.2 GHz bulk acoustic wave (BAW) RF filter.4. The device of wherein the diversity switch comprises a single pole two throw (SP2T) switch.5. The device of further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node.6. The device of wherein the LNA comprises a bypassable LNA.7. The device of further comprising a DC power detector having a voltage output claim 1 , the DC power detector being electrically coupled to the PA.8. The device of further comprising an RF power detector having an RF output from a directional coupler claim 1 , the RF power detector being electrically coupled to the PA.9. A 5.2 GHz front end module (FEM) device claim 1 , the device ...

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Номер записи: 13
07-02-2019 дата публикации

ELLIPTICAL STRUCTURE FOR BULK ACOUSTIC WAVE RESONATOR

Номер: US20190044493A1
Автор: HOULDEN Rohan W., KIM Dae Ho, Patel Pinal, SHEALY James Blanton, SHEALY Jeffrey B.
Принадлежит:

An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators. 1. An elliptical-shaped resonator circuit device , the device comprising:a bottom metal plate;a piezoelectric layer overlying the bottom metal plate; anda top metal plate overlying the piezoelectric layer;wherein the top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy.2. The device of wherein the ellipse ratio R ranges from about 1.20 to about 2.0.3. The device of wherein the bottom metal plate and top metal plate include molybdenum (Mo) claim 1 , ruthenium (Ru) claim 1 , or tungsten (W) claim 1 , Aluminum-Copper (AlCu).4. The device of wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN claim 1 , AlGaN claim 1 , GaN claim 1 , InN claim 1 , InGaN claim 1 , AlInN claim 1 , AlInGaN claim 1 , ScAlN claim 1 , ScGaN claim 1 , AlScYN claim 1 , and BN.5. The device of further comprising one or more pillar-type energy confinement features (ECFs) coupled to the top metal plate or the bottom metal plate; wherein the one or more pillar-type ECFs comprises a dielectric material claim 1 , a metal material claim 1 , or a combination of dielectric and metal materials.6. The device of further comprising one or ...

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Номер записи: 14
22-02-2018 дата публикации

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

Номер: US20180054176A1
Автор: KIM Dae Ho, SHEALY Jeffrey B., Vetury Ramakrishna, Winters Mary
Принадлежит:

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate;forming a first electrode overlying the piezoelectric film;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a sacrificial layer overlying the first electrode and the piezoelectric film;forming a support layer overlying the sacrificial layer, the first electrode, and the piezoelectric film;polishing the support layer;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the support layer to the bonding support layer;removing the growth substrate;forming an electrode contact via within the piezoelectric film overlying the first electrode;forming one or more release vias within the piezoelectric film and the first passivation layer overlying the sacrificial layer;forming a second electrode overlying the piezoelectric film;etching the second electrode to form a top metal separated from the second electrode, wherein the top metal is physically coupled ...

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Номер записи: 15
03-03-2016 дата публикации

MEMBRANE SUBSTRATE STRUCTURE FOR SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICE

Номер: US20160065172A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A substrate structure for an acoustic resonator device. The substrate has a substrate member comprising a plurality of support members configured to form an array structure. In an example, the substrate member has an upper region, and optionally, has a plurality of recessed regions configured by the support members. The substrate has a thickness of single crystal piezo material formed overlying the upper region. In an example, the thickness of single crystal piezo material has a first surface region and a second surface region opposite of the first surface region. 1. A method for manufacturing a single crystal acoustic resonator device , the method comprising:providing a silicon substrate member having a surface region configured in a <111> surface orientation and a backside region, the silicon substrate being single crystal silicon;placing the silicon substrate member into a processing chamber configured with a temperature controlled surface containing the silicon substrate;increasing a temperature of the surface region;maintaining the surface region between 900 C and 1200 C to oblate the surface region having a silicon material and oblate any other unintentional species residing on the surface region;{'sub': '2', 'introducing at least nitrogen (N) and trimethyl aluminum (TMA) entities into the process chamber at a flow rate of 1 cubic-centimeter (cc) per minute; dissociating an aluminum species from the TMA to react with the silicon substrate to create a meta-stable surface layer of aluminum-rich species; introducing at least an ammonia (NH3) entity into the process chamber with a minimum flow rate of 0.33 liters per minute;'}dissociating a nitrogen species form the ammonia entity;causing formation of a first thickness of aluminum nitride crystalline material, using at least the nitrogen species and the aluminum species, overlying the surface region to form a strained state from a lattice mismatch between the surface region of the silicon substrate material and ...

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Номер записи: 16
04-03-2021 дата публикации

Rf acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same

Номер: US20210067123A1
Автор: Craig Moe, Jeffrey B. Shealy, Mary Winters
Принадлежит: Akoustis Inc

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

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Номер записи: 17
28-02-2019 дата публикации

5G BAND n79 ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190068164A1
Автор: AICHELE David, Gibb Shawn R., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 18
27-02-2020 дата публикации

High power bulk acoustic wave resonator filter devices

Номер: US20200067486A1
Автор: Jeffrey B. Shealy, Joel M. MORGAN, Rohan W. HOULDEN, Shawn R. Gibb
Принадлежит: Akoustis Inc

An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.

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Номер записи: 19
16-03-2017 дата публикации

METHOD OF MANUFACTURE FOR SINGLE CRYSTAL CAPACITOR DIELECTRIC FOR A RESONANCE CIRCUIT

Номер: US20170077386A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal. 14-. (canceled)5. A method of manufacturing an integrated circuit , the method comprising:providing a substrate member a surface region and a backside region;treating the surface region to prepare the surface region for growth;forming an epitaxial material comprising single crystal piezo material overlying the surface region to a desired thickness;forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material;forming a topside landing pad metal within a vicinity of the trench region and overlying the exposed portion of the surface region;forming at least a pair of topside electrode members, including a first electrode member overlying a portion of the epitaxial material, and a second electrode member overlying the topside landing pad metal;processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material overlying the first electrode member, and exposing a backside of the landing pad metal; andforming a backside resonator metal material overlying the backside of ...

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Номер записи: 20
14-03-2019 дата публикации

WIRELESS COMMUNICATION INFRASTRUCTURE SYSTEM CONFIGURED WITH A SINGLE CRYSTAL PIEZO RESONATOR AND FILTER STRUCTURE

Номер: US20190081611A1
Автор: BOOMGARDEN Mark D., Gibb Shawn R., SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well. 1. A fixed wireless communication system comprising:a controller;a power source coupled to the controller;a baseband signal processing module coupled to the controller; an RF transmit module coupled to the baseband signal processing module and configured on a transmit path, wherein the RF transmit module includes a transmit filter having one or more filter devices, each of the one or more filter devices comprising a single crystal acoustic resonator device;', 'an RF receive module coupled to the baseband signal processing module, and configured on a receive path, wherein the RF receive module includes a receive filter;, 'one or more transceiver modules, each of the transceiver modules comprising'}an antenna coupled to each of the RF transmit modules and each of the RF receive modules;an antenna control device coupled to each of the receive paths and each of the transmit paths, and configured to select one of the receive paths or one of the transmit paths, wherein the antenna control device is coupled to the one or more transceiver modules;a power amplifier module coupled to ...

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Номер записи: 21
31-03-2022 дата публикации

FRONT END MODULES FOR 5.6 GHz & 6.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUITS

Номер: US20220103239A1
Автор: David M. AICHELE, Jeffrey B. Shealy, Rohan W. HOULDEN
Принадлежит: Akoustis Inc

A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

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Номер записи: 22
19-03-2020 дата публикации

Method of manufacture for single crystal capacitor dielectric for a resonance circuit

Номер: US20200091406A1
Автор: Jeffrey B. Shealy
Принадлежит: Akoustis Inc

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

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Номер записи: 23
08-04-2021 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR USING IMPROVED FABRICATION CONDITIONS, PERIMETER STRUCTURE MODIFICATIONS, AND THIN FILM TRANSFER PROCESS

Номер: US20210104993A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, HODGE Michael D., KIM Dae Ho, LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna, Winters Mary
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate, the piezoelectric film having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a first electrode overlying the piezoelectric film, the first electrode having one or more first electrode edges being characterized by a first electrode edge geometric shape;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a sacrificial layer overlying the first passivation layer. the first electrode, and the piezoelectric film;forming a support layer overlying the sacrificial layer, the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;polishing the support layer;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer ...

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Номер записи: 24
09-04-2020 дата публикации

4.5G 3.55-3.7 GHz BAND BULK ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20200112298A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first piezoelectric material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 25
03-05-2018 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

Номер: US20180123540A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, Gibb Shawn R., HODGE Michael D., LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator or filter device , the method comprising:providing a substrate having a substrate surface region;forming a single crystal piezoelectric layer overlying the substrate surface region, the single crystal piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming topside metal electrode overlying a portion of the top piezoelectric surface region, the topside metal electrode having a topside electrode surface region, a topside electrode perimeter, and one or more topside electrode edges;forming a topside pillar structure overlying a portion of the top piezoelectric surface region within a vicinity of the topside metal electrode and outside of the topside metal electrode perimeter;forming a topside micro-trench within a portion of the single crystal piezoelectric layer;forming a topside metal having a topside metal plug within the topside micro-trench;forming a backside trench within the substrate exposing the ...

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Номер записи: 26
03-05-2018 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

Номер: US20180123541A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, Gibb Shawn R., HODGE Michael D., LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator device , the method comprising:providing a substrate having a substrate surface region;forming a single crystal piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside energy confinement structure overlying the top piezoelectric surface region, the topside energy confinement structure being characterized by a topside structure geometric area and a topside structure perimeter, the topside energy confinement structure having at least one portion removed forming a topside structure break region;forming a topside metal electrode overlying the top piezoelectric surface region and within the topside energy confinement structure, the topside metal electrode being characterized by a topside electrode geometric area; andforming a backside trench within the substrate exposing the bottom piezoelectric surface region, the backside trench ...

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Номер записи: 27
03-05-2018 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

Номер: US20180123542A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, Gibb Shawn R., HODGE Michael D., LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator or filter device , the method comprising:providing a substrate having a substrate surface region;forming a single crystal piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside metal electrode overlying the top piezoelectric surface region, the topside metal electrode being characterized by a topside electrode geometric area;forming a topside micro-trench within a portion of the single crystal piezoelectric layer;forming a topside metal having a topside metal plug within the topside micro-trench;forming a backside trench within the substrate exposing the bottom piezoelectric surface region, the backside trench underlying the topside metal electrode and the topside micro-trench, the backside trench being characterized by a cavity geometric area and having one or more backside trench edges;forming a backside metal electrode ...

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Номер записи: 28
16-04-2020 дата публикации

Method and structure for single crystal acoustic resonator devices using thermal recrystallization

Номер: US20200119715A1
Автор: Craig Moe, Jeff LEATHERSICH, Jeffrey B. Shealy, Shawn R. Gibb, Steven DenBaars
Принадлежит: Akoustis Inc

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

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Номер записи: 29
24-05-2018 дата публикации

Single crystal acoustic resonator and bulk acoustic wave filter

Номер: US20180145652A1
Автор: Jeffrey B. Shealy
Принадлежит: Akoustis Inc

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

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Номер записи: 30
15-09-2022 дата публикации

WAFER SCALE PACKAGING

Номер: US20220293455A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures. 1. A method of wafer scale packaging Group III-Nitride containing devices , the method comprising:providing a substrate member having a surface region;forming a thickness of Group III-Nitride material overlying the surface region;forming an insulating material overlying a portion of the thickness of Group III-Nitride material;forming a contact region to expose a portion of the thickness of the Group III-Nitride material; andforming a pillar structure comprising a copper material within the contact region.2. The method of further comprising forming a thickness of solder material overlying the pillar structure to cause formation of a solder bump; andbonding the solder bump to a contact member on a substrate structure.3. The method of wherein the Group III-Nitride material is deposited by LPCVD; andfurther comprising using dichlorosilane (DCS), provided with or without Ammonia, to clean and prepare a surface of the Group III-Nitride material for single crystal growth.4. The method of wherein the Group III-Nitride material is selected from at least one of a single crystal oxide including a high K dielectric claim 1 , ZnO claim 1 , or MgO.5. The method of wherein the Group III-Nitride material is characterized by X-ray diffraction with clear peak at a detector angle (2 ...

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Номер записи: 31
16-05-2019 дата публикации

METHOD OF MANUFACTURE FOR SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES USING MICRO-VIAS

Номер: US20190148621A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., LEWIS Michael P., SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator device. The method can include forming a topside metal electrode overlying a piezoelectric substrate with a piezoelectric layer and a seed substrate. A topside micro-trench can be formed within the piezoelectric layer and a topside metal can be formed overlying the topside micro-trench. This topside metal can include a topside metal plug formed within the topside micro-trench. A first backside trench can be formed underlying the topside metal electrode, and a second backside trench can be formed underlying the topside micro-trench. A backside metal electrode can be formed within the first backside trench, while a backside metal plug can be formed within the second backside trench and electrically coupled to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside trench, and the backside metal plug form a micro-via. 1. A method for fabricating an acoustic resonator device , the method comprising:providing a piezoelectric substrate having a piezoelectric layer formed overlying a seed substrate and a substrate surface region as a top surface of the piezoelectric layer;forming a topside metal electrode overlying a portion of the substrate surface region;forming a topside micro-trench within a portion of the piezoelectric layer different from the portion where the topside metal electrode is formed that extends through the piezoelectric layer;forming one or more bond pads overlying one or more portions of the piezoelectric layer different from the one or more portions where the topside metal electrode and the topside micro-trench are formed;forming a topside metal having a topside metal plug within the topside micro-trench and electrically coupled to at least one of the bond pads;providing a top cap structure, the top cap structure including a substrate with one or more bottom bond pads;bonding the top cap structure to the piezoelectric substrate, the ...

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Номер записи: 32
17-06-2021 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

Номер: US20210184641A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, Gibb Shawn R., HODGE Michael D., LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A bulk acoustic wave device comprising:a piezoelectric layer overlying a surface of a substrate, the piezoelectric layer having a top piezoelectric surface and a bottom piezoelectric surface;a top metal electrode on the top piezoelectric surface;a backside energy confinement structure on the bottom piezoelectric surface, the backside energy confinement structure defined by a backside structure geometric area and a backside structure perimeter;a backside metal electrode on the bottom piezoelectric surface opposite the top metal electrode wherein the backside structure perimeter of the backside energy confinement structure is outside a perimeter of the backside metal electrode; anda resonator cavity in the substrate exposing the backside metal electrode.2. A bulk acoustic wave device comprising:a piezoelectric layer overlying a surface of a substrate, the piezoelectric layer having a top piezoelectric surface and a bottom piezoelectric surface;a top metal electrode on the top piezoelectric surface;a ...

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Номер записи: 33
17-06-2021 дата публикации

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

Номер: US20210184642A1
Автор: KIM Dae Ho, SHEALY Jeffrey B., Vetury Ramakrishna, Winters Mary
Принадлежит:

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity. 1. An acoustic resonator device comprising:a substrate;a support layer overlying the substrate, the support layer having an air cavity;a first electrode overlying the air cavity and a portion of the support layer;a first passivation layer overlying the support layer and being physically coupled to the first electrode;a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;a second electrode formed overlying the piezoelectric film; anda top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via.2. The device of wherein the substrate includes silicon (S) claim 1 , silicon carbide (SiC) claim 1 , sapphire (AlO) claim 1 , silicon dioxide (SiO) claim 1 , or other silicon materials.3. The device of wherein the piezoelectric film is a single crystal or polycrystalline piezoelectric film that includes aluminum nitride (AlN) claim 1 , gallium nitride (GaN) claim 1 , AlGaN alloys claim 1 , or other epitaxial materials.4. The ...

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Номер записи: 34
14-05-2020 дата публикации

Methods of Forming Group III Piezoelectric Thin Films Via Removal of Portions of First Sputtered Material

Номер: US20200152858A1
Автор: KIM Dae Ho, Kochhar Abhay Saranswarup, Moe Craig, SHEALY Jeffrey B., Winters Mary
Принадлежит:

A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion. 1. A method of forming a piezoelectric thin film , the method comprising:providing an inert gas and a nitrogen process gas to a process chamber including a substrate and a target comprising one of more Group III elements;sputtering the one or more Group III elements from the target onto a first surface of the substrate to provide the piezoelectric thin film including a nitride of the one or more Group III elements on the first surface of the substrate;processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film comprises a first crystalline quality portion of the piezoelectric thin film;removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion of the piezoelectric thin film that is covered by the first crystalline quality portion of the piezoelectric thin film, wherein the second ...

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Номер записи: 35
23-05-2019 дата публикации

METHOD OF MANUFACTURING INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES

Номер: US20190158058A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R) to (RN), where N is an integer greater than 1. 11. A method for fabricating a monolithic filter ladder network , the monolithic filter ladder network comprising a plurality of crystalline acoustic resonator devices , numbered from R to RN , where N is an integer greater than 1 , configured on a common substrate member , the method comprising:providing a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region;forming a thickness of crystalline material overlying the surface region, the thickness of crystalline piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region;forming a first electrode member overlying an upper portion of the thickness of crystalline piezo material;forming a second electrode member overlying a lower portion of the thickness of crystalline piezo material to sandwich the ...

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Номер записи: 36
14-06-2018 дата публикации

MEMBRANE SUBSTRATE STRUCTURE FOR SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICE

Номер: US20180167052A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A substrate structure for an acoustic resonator device. The substrate has a substrate member comprising a plurality of support members configured to form an array structure. In an example, the substrate member has an upper region, and optionally, has a plurality of recessed regions configured by the support members. The substrate has a thickness of single crystal piezo material formed overlying the upper region. In an example, the thickness of single crystal piezo material has a first surface region and a second surface region opposite of the first surface region. 116-. (canceled)17. A substrate structure for an acoustic resonator device , the substrate comprising:a substrate member comprising a plurality of support members configured to form an array structure, the substrate member having an upper region;a thickness of single crystal piezo material formed overlying the upper region, the thickness of single crystal piezo material having a first surface region and a second surface region opposite of the first surface region;a plurality of exposed regions of the second surface region of the thickness of single crystal piezo material, each of the exposed regions configured by at least a pair of support members and is configured to form an element of the array structure.18. The substrate of wherein the upper region is configured from a surface region of a silicon substrate.19. The substrate of wherein the upper region is configured from a surface region of a silicon substrate; and wherein the plurality of support members provided by an etching process configured to form a plurality of pillar structures and a plurality of rib structures; and further comprising a pair of electrodes configured between a portion of the thickness of single crystal piezo material.20. A method of forming an acoustic resonator device claim 17 , the method comprising:providing a substrate member comprising a plurality of support members configured to form an array structure, the substrate member ...

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Номер записи: 37
29-09-2022 дата публикации

FRONT END MODULE FOR 6.1 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20220311502A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A front end module , comprising:a bulk acoustic wave (BAW) filter including:an input node;an output node; anda plurality of BAW resonators arranged in a circuit having a series circuit configuration and parallel circuit configuration, the circuit electrically coupled to the input node and the output node, each of the BAW resonators comprising:a reflector;a bottom electrode overlying the reflector;a piezoelectric material overlying the bottom electrode;a top electrode overlying the piezoelectric material and the bottom electrode; andan insulating material overlying the top electrode;at least one BAW resonator of the plurality of BAW resonators, including:an electrode contact via through the piezoelectric material; anda top metal overlying the piezoelectric material, the top metal being physically coupled to the bottom electrode through the electrode contact via; andthe circuit, resulting from the series circuit configuration and the parallel circuit configuration of the plurality of BAW resonators having a circuit response between the input port and the output port of a transmission loss from a pass band having a characteristic ...

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Номер записи: 38
01-07-2021 дата публикации

MONOLITHIC SINGLE CHIP INTEGRATED RADIO FREQUENCY FRONT END MODULE CONFIGURED WITH SINGLE CRYSTAL ACOUSTIC FILTER DEVICES

Номер: US20210202473A1
Автор: AICHELE David, BOOMGARDEN Mark D., Gibb Shawn R., SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions. 1. A monolithic single chip device , the device comprising:a substrate having an underlying cavity region;a first piezoelectric layer formed overlying the substrate;a first device configured within the first piezoelectric layer and within the underlying cavity region;one or more second piezoelectric layers formed overlying the first piezoelectric layer;a second device configured within or overlying the one or more second piezoelectric layers; andwherein the first piezoelectric layer and the one or more second piezoelectric layers are formed as a monolithic stack.2. The device of wherein the substrate comprises a silicon claim 1 , a sapphire claim 1 , a silicon carbide claim 1 , a GaN bulk claim 1 , a GaN template claim 1 , an AlN bulk claim 1 , an AlN template claim 1 , or an AlGaN template material.3. The device of wherein the substrate comprises a silicon claim 1 , a sapphire claim 1 , a silicon carbide claim 1 , a GaN bulk claim 1 , a GaN template claim 1 , an AlN bulk claim 1 , an AlN template claim 1 , or an AlGaN template material.4. The device of wherein at least one of the one or more second piezoelectric layers comprises an AlN claim 1 , an AlGaN claim 1 , a GaN claim 1 , an InN claim 1 , an InGaN claim 1 , an AlInN claim 1 , an AlInGaN claim 1 , or a BN material.5. The device of wherein the first device comprises a passive device claim 1 , a filter device claim 1 , a switch ...

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Номер записи: 39
01-07-2021 дата публикации

FRONT END MODULE FOR 6.1 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20210203402A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 6.1 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node; a substrate;', 'a support layer overlying the substrate, the support layer having an air cavity;', 'a first electrode overlying the air cavity and a portion of the support layer;', 'a first passivation layer overlying the support layer and being physically coupled to the first electrode;', 'a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;', 'a second electrode formed overlying the piezoelectric film; and', 'a top metal formed overlying the piezoelectric film the top metal being physically coupled to the first electrode through the electrode contact via; and, 'a 6.1 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 6.1 GHz BAW resonator comprises'}a diversity switch electrically coupled the 6.1 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 6.1 GHz power amplifier providing power gain in the frequency spectrum from 5.17 GHz to 7.125 ...

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Номер записи: 40
28-05-2020 дата публикации

Method of manufacture for single crystal acoustic resonator devices using micro-vias

Номер: US20200169237A1
Автор: Alexander Y. FELDMAN, Jeffrey B. Shealy, Mark D. BOOMGARDEN, Michael P. Lewis, Ramakrishna Vetury, Shawn R. Gibb
Принадлежит: Akoustis Inc

A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

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Номер записи: 41
13-06-2019 дата публикации

COMMUNICATION FILTER FOR LTE BAND 41

Номер: US20190181831A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., Gibb Shawn R., LEWIS Michael P., SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A communication system using a single crystal acoustic resonator device. The device includes a piezoelectric substrate with a piezoelectric layer formed overlying a transfer substrate. A topside metal electrode is formed overlying the substrate. A topside micro-trench is formed within the piezoelectric layer. A topside metal with a topside metal plug is formed within the topside micro-trench. First and second backside cavities are formed within the transfer substrate under the topside metal electrode. A backside metal electrode is formed under the transfer substrate, within the first backside cavity, and under the topside metal electrode. A backside metal plug is formed under the transfer substrate, within the second backside cavity, and under the topside micro-trench. The backside metal plug is connected to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside cavity, and the backside metal plug form a micro-via. 1. A communication filter device comprising:a piezoelectric substrate having a substrate surface region, the piezoelectric substrate having a piezoelectric layer formed overlying a transfer substrate;a topside metal electrode formed overlying a portion of the substrate surface region;a topside micro-trench formed within a portion of the piezoelectric layer;one or more bond pads formed overlying one or more portions of the piezoelectric layer;a topside metal having a topside metal plug formed within the topside micro-trench and electrically coupled to at least one of the bond pads;a first backside cavity formed adjacent to the transfer substrate and underlying the topside metal electrode;a second backside cavity formed within the transfer substrate and underlying the topside micro-trench;a backside metal electrode formed underlying one or more portions of the transfer substrate, within the first backside cavity, and underlying the topside metal electrode; anda backside metal plug ...

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Номер записи: 42
20-06-2019 дата публикации

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

Номер: US20190190479A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., GEISS Art, Gibb Shawn R., HODGE Michael D., LEWIS Michael P., Patel Pinal, SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A bulk acoustic wave device comprising:a piezoelectric layer overlying a surface of a substrate, the piezoelectric layer having a top piezoelectric surface and a bottom piezoelectric surface;a top metal electrode on the top piezoelectric surface;a backside trench in the substrate exposing the bottom piezoelectric surface;a backside energy confinement structure underlying the bottom piezoelectric surface, the backside energy confinement structure defined by a backside structure geometric area and a backside structure perimeter; anda backside metal electrode underlying the bottom piezoelectric surface opposite the top metal electrode.2. The device of wherein the backside metal electrode is adjacent to the backside energy confinement structure.3. The device of wherein the backside energy confinement structure includes a backside structure break claim 1 , the device further comprising:a backside sandbar structure underlying the bottom piezoelectric surface adjacent to the backside structure break; wherein ...

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Номер записи: 43
27-06-2019 дата публикации

5.5 GHz WI-FI 5G COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190199316A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 44
29-07-2021 дата публикации

PIEZOELECTRIC ACOUSTIC RESONATOR WITH DIELECTRIC PROTECTIVE LAYER MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

Номер: US20210234525A1
Автор: BI Frank Zhiquang, HOULDEN Rohan W., KIM Dae Ho, Kochhar Abhay Saranswarup, Mehdizadeh Emad, SHEALY Jeffrey B., Winters Mary
Принадлежит:

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate;forming a first electrode overlying the piezoelectric film;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a sacrificial layer overlying the first passivation layer, the first electrode, and the piezoelectric film;forming a support layer overlying the sacrificial layer, the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;polishing the support layer;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer thereby forming a bonded device;removing the growth substrate from the bonded device;forming a dielectric protection layer (DPL) overlying the piezoelectric layer;forming an electrode contact via within the piezoelectric film and the DPL overlying the first electrode on the bonded device;removing a portion of ...

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Номер записи: 45
09-07-2020 дата публикации

WIRELESS COMMUNICATION INFRASTRUCTURE SYSTEM CONFIGURED WITH A SINGLE CRYSTAL PIEZO RESONATOR AND FILTER STRUCTURE USING THIN FILM TRANSFER PROCESS

Номер: US20200220513A1
Автор: SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device formed with a thin film transfer process with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well. 1. A fixed wireless communication system comprising:a controller;a power source coupled to the controller;a baseband signal processing module coupled to the controller; an RF transmit module coupled to the baseband signal processing module and configured on a transmit path, wherein the RF transmit module includes a transmit filter having one or more filter devices, each of the one or more filter devices comprising a single crystal acoustic resonator device;', 'an RF receive module coupled to the baseband signal processing module, and configured on a receive path, wherein the RF receive module includes a receive filter;, 'one or more transceiver modules, each of the transceiver modules comprising'}an antenna coupled to each of the RF transmit modules and each of the RF receive modules;an antenna control device coupled to each of the receive paths and each of the transmit paths, and configured to select one of the receive paths or one of the transmit paths, wherein the antenna control device is coupled to the one or more transceiver ...

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Номер записи: 46
09-07-2020 дата публикации

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

Номер: US20200220514A1
Автор: KIM Dae Ho, SHEALY Jeffrey B., Vetury Ramakrishna, Winters Mary
Принадлежит:

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity. 1. An acoustic resonator device comprising:a bond substrate;a bonding support layer overlying the bond substrate;a support layer overlying the bonding support layer, the support layer having an air cavity;a first electrode overlying the air cavity and a portion of the support layer;a first passivation layer overlying the support layer and being physically coupled to the first electrode;a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;a second electrode formed overlying the piezoelectric film;a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via;a first contact metal formed overlying a portion of the second electrode and the piezoelectric film;a second contact metal formed overlying a portion of the top metal and the piezoelectric film; anda second passivation layer formed overlying the piezoelectric film, the second electrode, and the top metal.2. The device of wherein the growth substrate and bond ...

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Номер записи: 47
19-08-2021 дата публикации

ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT DEVICE

Номер: US20210257993A1
Автор: AICHELE David M., HODGE Michael D., HOULDEN Rohan W., SHEALY Jeffrey B., SHEN Ya, Vetury Ramakrishna, Winters Mary
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising: a capacitor device including a substrate member, the substrate member having a cavity region and an upper surface region contiguous with a first opening of the cavity region;', 'a bottom electrode configured within a portion of the cavity region;', 'a piezoelectric material configured overlying the upper surface region and the bottom electrode;', 'a top electrode configured overlying the piezoelectric material and overlying the bottom electrode; and', 'an insulating material overlying the top electrode and configured with a thickness to tune the resonator; and, 'a plurality of resonator devices, each of the plurality of resonator devices comprisinga plurality of shunt configuration resonator devices;wherein the plurality of resonator devices is configured in a serial configuration; andwherein the plurality of shunt configuration resonators is configured in a parallel configuration such that one of the plurality of shunt configuration resonators is coupled to the serial ...

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Номер записи: 48
16-07-2020 дата публикации

5.5 GHz Wi-Fi 5G COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20200228096A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B., SHEN Ya
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first piezoelectric material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 49
25-08-2016 дата публикации

INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES

Номер: US20160248395A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 10defects/cm. 11. A method for fabricating a monolithic filter ladder network , the monolithic filter ladder network comprising a plurality of single crystal acoustic resonator devices , numbered from (R) to (RN) , where N is an integer greater than 1 , configured on a common substrate member , the method comprising:providing a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region, the bulk substrate structure being made of a material that is one of a gallium nitride (GaN), silicon carbide (SiC), silicon (Si), sapphire (Al2O3), aluminum nitride (AlN), or combinations thereof;{'sup': 12', '2, 'forming a thickness of single crystal piezo material overlying the surface region, the thickness of single crystal piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region, the single crystal piezo material having a thickness of greater than 0.4 microns, the single crystal piezo material being characterized by a dislocation density of less than 10defects/cm;'}forming a first electrode member overlying an upper portion of the thickness of single crystal piezo material;forming a second electrode member overlying a lower portion of the thickness of single crystal piezo material to sandwich the thickness of single crystal piezo material with the first electrode member ...

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Номер записи: 50
15-08-2019 дата публикации

5G n79 WI-FI ACOUSTIC TRIPLEXER CIRCUIT

Номер: US20190253038A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF triplexer circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member ...

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Номер записи: 51
14-09-2017 дата публикации

RESONANCE CIRCUIT WITH A SINGLE CRYSTAL CAPACITOR DIELECTRIC MATERIAL

Номер: US20170263849A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 10defects/ cm. A second electrode material is overlying the single crystal capacitor dielectric material. 1. A method for fabricating a single crystal acoustic electronic device the method comprising:providing a substrate having a via cavity formed through a portion of the substrate, the substrate having a surface region and a backside surface region;forming a first electrode material coupled to a portion of the backside surface region and spatially configured within the via cavity;{'sup': 12', '2, 'forming a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity and coupled to the first electrode material through the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 10defects/cm; and'}forming a second electrode material overlying the single crystal capacitor dielectric material.2. The method of wherein the single crystal capacitor material is selected from at least one of AlN claim 1 , AlGaN claim 1 , InN claim 1 , BN claim 1 , or other group III nitrides.3. The method of wherein the single crystal capacitor material is selected from at least one of a single crystal oxide including a high K dielectric claim 1 , ZnO claim 1 , or MgO.4. The method of wherein the single crystal capacitor dielectric material is characterized by a surface region of at least 200 micron by 200 micron.5. The method of wherein the single crystal capacitor dielectric ...

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Номер записи: 52
14-09-2017 дата публикации

METHOD OF MANUFACTURE FOR SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES USING MICRO-VIAS

Номер: US20170264256A1
Автор: BOOMGARDEN Mark D., FELDMAN Alexander Y., Gibb Shawn R., LEWIS Michael P., SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications. 1. A method for fabricating an acoustic resonator device , the method comprising:providing a substrate having a substrate surface region;forming a nucleation layer overlying the substrate surface region and being characterized by nucleation growth parameters; and{'sup': 12', '2, 'forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein forming the strained single crystal piezoelectric layer includes an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer to improve one or more piezoelectric properties of the piezoelectric layer; wherein the strained single crystal piezoelectric material has a thickness greater than 0.4 microns and is characterized by a dislocation density less than 10defects/cm.'}2. The method of wherein the substrate is selected from one of the following: a silicon substrate claim 1 , a sapphire substrate claim 1 , silicon carbide substrate claim 1 , a GaN bulk substrate claim 1 , a GaN template claim 1 , an AlN bulk claim 1 , an AlN template claim 1 , and an AlGaN template.3. The method ...

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Номер записи: 53
22-08-2019 дата публикации

METHOD AND STRUCTURE OF SINGLE CRYSTAL ELECTRONIC DEVICES WITH ENHANCED STRAIN INTERFACE REGIONS BY IMPURITY INTRODUCTION

Номер: US20190259934A1
Автор: DenBaars Steven, Gibb Shawn R., SHEALY Jeffrey B.
Принадлежит:

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges. 1. A method for fabricating a single crystal electronic device , the method comprising:providing a substrate having a substrate surface region;forming a nucleation layer overlying the substrate surface region and being characterized by nucleation growth parameters; andforming a first single crystal piezoelectric layer overlying the nucleation layer;doping the first single crystal piezoelectric layer by introducing one or more impurity species including scandium (Sc) to form a first strained single crystal piezoelectric layer;wherein the first strained single crystal piezoelectric layer is characterized by a first strain condition and first piezoelectric layer parameters;forming a second single crystal piezoelectric layer overlying the first single crystal piezoelectric layer; anddoping the second single crystal piezoelectric layer by introducing one or more impurity species including scandium (Sc) to form a second strained single crystal piezoelectric layer;wherein the second strained single crystal piezoelectric layer is characterized by a second strain condition and second piezoelectric layer parameters;wherein the first strained single crystal piezoelectric layer and the second ...

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Номер записи: 54
27-08-2020 дата публикации

FRONT END MODULE FOR 5.2 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20200274607A1
Автор: AICHELE David M., Gibb Shawn R., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A front end module (FEM) for a 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.2 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.2 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.2 GHz PA, a 5.2 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 5.2 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node; a substrate;', 'a support layer overlying the substrate, the support layer having an air cavity;', 'a first electrode overlying the air cavity and a portion of the support layer;', 'a first passivation layer overlying the support layer and being physically coupled to the first electrode;', 'a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;', 'a second electrode formed overlying the piezoelectric film; and', 'a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via; and, 'a 5.2 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 5.2 GHz BAW resonator comprises'}a diversity switch electrically coupled the 5.2 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a power amplifier with power gain at 5.2 GHz.3. The device of wherein the 5.2 GHz BAW resonator ...

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Номер записи: 55
19-09-2019 дата публикации

Resonance circuit with a single crystal capacitor dielectric material

Номер: US20190288182A1
Автор: Jeffrey B. Shealy
Принадлежит: Akoustis Inc

A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 10 12 defects/cm 2 . A second electrode material is overlying the single crystal capacitor dielectric material.

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Номер записи: 56
19-09-2019 дата публикации

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

Номер: US20190288658A1
Автор: KIM Dae Ho, SHEALY Jeffrey B., Vetury Ramakrishna, Winters Mary
Принадлежит:

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate;forming a first electrode overlying the piezoelectric film;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a support layer overlying the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;polishing the support layer;etching the support layer to form an air cavity;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer thereby forming a bonded device;removing the growth substrate;forming an electrode contact via within the piezoelectric film overlying the first electrode on the bonded device;forming a second electrode layer overlying the piezoelectric film and within the contact via;etching the second electrode layer to form a top metal separated from a second electrode, wherein the top metal is physically coupled to the ...

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Номер записи: 57
19-10-2017 дата публикации

MOBILE COMMUNICATION DEVICE CONFIGURED WITH A SINGLE CRYSTAL PIEZO RESONATOR STRUCTURE

Номер: US20170302428A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device. 1. A method of using a communication system comprising:providing a mobile communication system comprising:a housing comprising an interior region and an exterior region;a display coupled to the housing;a processing device provided within the interior region of the housing; an rf transmit module coupled to the processing device and configured on a transmit path, wherein the rf transmit module includes a transmit filter having one or more diplexer filter devices, each of the one or more diplexer filter devices comprising a single crystal acoustic resonator device;', 'an rf receive module coupled to the processing device and configured on a receive path, wherein the rf receive module includes a receive filter;, 'a filter diplexer module comprising'}an antenna coupled to the rf transmit module and the rf receive module;an antenna control device coupled to the receive path and the transmit path and configured to select either the receive path or the transmit path, wherein the antenna control device is coupled to the filter diplexer module;a power amplifier module coupled to the processing device and the filter diplexer module, the power amplifier module being configured on the transmit path and the receive path, wherein the power amplifier module comprises a plurality of communication bands, each communication band having a power amplifier, wherein the one or more diplexer filter devices are configured to one or more of the plurality of communication bands;a band-to-band isolation between any pair ...

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Номер записи: 58
25-10-2018 дата публикации

5.2 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20180309422A1
Автор: AICHELE David, Gibb Shawn R., HODGE Michael, HOULDEN Rohan W., SHEALY Jeffrey B., Vetury Ramakrishna, Winters Mary
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 59
25-10-2018 дата публикации

5.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20180309425A1
Автор: Gibb Shawn R., HOULDEN Rohan W., SHEALY Jeffrey B., Vetury Ramakrishna, Winters Mary
Принадлежит: Akoustis, Inc.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 60
03-10-2019 дата публикации

METHOD AND STRUCTURE FOR HIGH PERFORMANCE RESONANCE CIRCUIT WITH SINGLE CRYSTAL PIEZOELECTRIC CAPACITOR DIELECTRIC MATERIAL

Номер: US20190305753A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method and structure for an essentially single crystal acoustic electronic device. The device includes a substrate having an enhancement layer formed overlying its surface region and an air cavity formed through a portion of the substrate. An essentially single crystal piezoelectric material is formed overlying the air cavity and a portion of the enhancement layer. Also, a first electrode material coupled to the backside surface region of the crystal piezoelectric material and spatially configured within the cavity. A second electrode material is formed overlying the topside of the piezoelectric material, and a dielectric layer formed overlying the second electrode material. Further, one or more shunt layers can be formed around the perimeter of a resonator region of the device to connect the piezoelectric material to the enhancement layer. 1. An essentially single crystal acoustic electronic device , the device comprising:a substrate having a surface region covered with an enhancement layer, and a backside surface region, the substrate having an air cavity formed through a portion of the substrate;an essentially single crystal piezoelectric material formed overlying the air cavity and a portion of the enhancement layer covering the surface region;a first electrode material coupled to a portion of the backside surface region of the essentially single crystal piezoelectric material and spatially configured within the cavity;a second electrode material formed overlying the topside of the essentially single crystal piezoelectric material; anda dielectric layer formed overlying the second electrode material.2. The device of wherein the substrate is selected from silicon claim 1 , silicon-on-insulator (SOI) claim 1 , silicon carbide claim 1 , sapphire claim 1 , gallium arsenide claim 1 , gallium nitride claim 1 , aluminum claim 1 , aluminum nitride claim 1 , glass claim 1 , and aluminum oxide claim 1 , and combinations thereof.3. The device of wherein the enhancement ...

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Номер записи: 61
10-10-2019 дата публикации

MONOLITHIC SINGLE CHIP INTEGRATED RADIO FREQUENCY FRONT END MODULE CONFIGURED WITH SINGLE CRYSTAL ACOUSTIC FILTER DEVICES

Номер: US20190312027A1
Автор: AICHELE David, BOOMGARDEN Mark D., Gibb Shawn R., SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит:

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions. 112-. (canceled)13. A monolithic single chip single crystal device , the device comprising:a substrate having a substrate surface region and an underlying cavity region;a first single crystal epitaxial layer formed overlying the substrate surface region;a passive device configured within the first single crystal epitaxial layer and within the underlying cavity region;one or more second single crystal epitaxial layers formed overlying the first single crystal epitaxial layer;an active device configured overlying the one or more second single crystal epitaxial layers; andwherein the first single crystal epitaxial layer and the one or more second single crystal epitaxial layers are formed as a monolithic epitaxial stack integrating multiple circuit functions.14. The device of wherein the substrate is selected from one of the following: a silicon substrate claim 13 , a sapphire substrate claim 13 , silicon carbide substrate claim 13 , a GaN bulk substrate claim 13 , a GaN template claim 13 , an AlN bulk claim 13 , an AlN template claim 13 , and an AlGaN template.15. The device of wherein the first single crystal epitaxial layer comprises an aluminum nitride (AlN) material claim 13 , and wherein the first single crystal epitaxial layer is characterized by a thickness of about 0.01 um to about 10.0 um.16. The device of wherein at least one of the one or more second single crystal epitaxial ...

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Номер записи: 62
01-10-2020 дата публикации

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

Номер: US20200313639A1
Автор: FALLON Kenneth, KIM Dae Ho, SHEALY Jeffrey B., Winters Mary
Принадлежит:

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric layer overlying a substrate member;forming one or more first electrodes overlying the piezoelectric layer;forming a sacrificial layer overlying the one or more first electrodes and the piezoelectric layer;forming a support layer overlying the sacrificial layer, the one or more first electrodes, and the piezoelectric layer thereby forming one or more devices on the substrate member;polishing the support layer;forming one or more cavities within the support layer to expose one or more portions of the sacrificial layer overlying the one or more first electrodes;removing the sacrificial layer to release one or more cavities in the support layer around the one or more first electrodes; andforming a bond substrate overlying the support layer to enclose the one or more cavities in the support layer with the one or more first electrodes thereby forming one or more encapsulated devices.2. The method of wherein the substrate member claim 1 , the support layer claim 1 , and the bond substrate include silicon (S) claim 1 , silicon carbide (SiC) claim 1 , sapphire (AlO) claim 1 , silicon dioxide (SiO) claim 1 , ...

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Номер записи: 63
01-10-2020 дата публикации

FRONT END MODULE FOR 5.5 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20200313750A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A front end module (FEM) for a 5.5 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.5 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.5 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.5 GHz PA, a 5.5 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 5.5 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node; a substrate;', 'a support layer overlying the substrate, the support layer having an air cavity;', 'a first electrode overlying the air cavity and a portion of the support layer;', 'a first passivation layer overlying the support layer and being physically coupled to the first electrode;', 'a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;', 'a second electrode formed overlying the piezoelectric film; and', 'a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via; and, 'a 5.5 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 5.5 GHz BAW resonator comprises'}a diversity switch electrically coupled the 5.5 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 5.5 GHz power amplifier.3. The device of wherein the 5.5 GHz BAW resonator comprises a 5.5 GHz ...

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Номер записи: 64
01-10-2020 дата публикации

FRONT END MODULE FOR 6.5 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20200313751A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A front end module (FEM) for a 6.5 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.5 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.5 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.5 GHz PA, a 6.5 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 6.5 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node; a substrate;', 'a support layer overlying the substrate, the support layer having an air cavity;', 'a first electrode overlying the air cavity and a portion of the support layer;', 'a first passivation layer overlying the support layer and being physically coupled to the first electrode;', 'a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;', 'a second electrode formed overlying the piezoelectric film; and', 'a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via; and, 'a 6.5 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 6.5 GHz BAW resonator comprises'}a diversity switch electrically coupled the 6.5 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 6.5 GHz power amplifier.3. The device of wherein the 6.5 GHz BAW resonator comprises a 6.5 GHz ...

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Номер записи: 65
24-10-2019 дата публикации

5G 3.5-3.6GHZ BAND ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190326885A1
Автор: AICHELE David M., Gibb Shawn R., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first piezoelectric material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 66
10-12-2015 дата публикации

INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES

Номер: US20150357987A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 10defects/cm. 1. A monolithic filter ladder network comprising:{'b': '1', 'claim-text': a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region;', {'sup': 12', '2, 'a thickness of single crystal piezo material formed overlying the surface region, the thickness of single crystal piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region, the single crystal piezo material having a thickness of greater than 0.4 microns, the single crystal piezo material being characterized by a dislocation density of less than 10defects/cm;'}, 'a first electrode member formed overlying an upper portion of the thickness of single crystal piezo material;', 'a second electrode member formed overlying a lower portion of the thickness of single crystal piezo material to sandwich the thickness of single crystal piezo material with the first electrode member and the second electrode member, the second electrode member extending from the lower portion that includes the exposed backside region to the contact region;', 'a second electrode structure configured with the contact region;', 'a first electrode structure configured with the first electrode member;', 'a dielectric material overlying an upper surface region of a resulting structure overlying the bulk substrate member; and', ' ...

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Номер записи: 67
10-12-2015 дата публикации

INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES

Номер: US20150357993A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 10defects/cm. 1. A monolithic filter ladder network comprising:{'b': '1', 'claim-text': a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region, the bulk substrate structure being made of a material that is one of a gallium nitride (GaN), silicon carbide (SiC), silicon (Si), sapphire (Al2O3), aluminum nitride (AlN), or combinations thereof;', {'sup': 12', '2, 'a thickness of single crystal piezo material formed overlying the surface region, the thickness of single crystal piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region, the single crystal piezo material having a thickness of greater than 0.4 microns, the single crystal piezo material being characterized by a dislocation density of less than 10defects/cm;'}, 'a first electrode member formed overlying an upper portion of the thickness of single crystal piezo material;', 'a second electrode member formed overlying a lower portion of the thickness of single crystal piezo material to sandwich the thickness of single crystal piezo material with the first electrode member and the second electrode member, the second electrode member extending from the lower portion that includes the exposed backside region to the contact region;', 'a second electrode structure configured with the contact region;', 'a ...

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Номер записи: 68
10-12-2015 дата публикации

RESONANCE CIRCUIT WITH A SINGLE CRYSTAL CAPACITOR DIELECTRIC MATERIAL

Номер: US20150357994A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 10defects/cm. A second electrode material is overlying the single crystal capacitor dielectric material. 1. A single crystal acoustic electronic device comprising:a substrate, the substrate having a surface region;a first electrode material coupled to a portion of the substrate;{'sup': 12', '2, 'a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 10defects/cm; and'}a second electrode material overlying the single crystal capacitor dielectric material.2. The device of wherein the single crystal capacitor material is selected from at least one of AlN claim 1 , AlGaN claim 1 , InN claim 1 , BN claim 1 , or other group III nitrides.3. The device of wherein the single crystal capacitor material is selected from at least one of a single crystal oxide including a high K dielectric claim 1 , ZnO claim 1 , or MgO.4. The device of wherein the single crystal capacitor dielectric material is characterized by a surface region of at least 200 micron by 200 micron.5. The device of wherein the single crystal capacitor dielectric material is configured in a first strain state to compensate to the substrate; wherein the single crystal capacitor dielectric material is deposited overlying the exposed portion of the substrate.6. The device of wherein the ...

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Номер записи: 69
29-11-2018 дата публикации

METHOD AND STRUCTURE FOR SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES USING THERMAL RECRYSTALLIZATION

Номер: US20180342999A1
Автор: DenBaars Steven, Gibb Shawn R., LEATHERSICH Jeff, Moe Craig, SHEALY Jeffrey B.
Принадлежит:

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance. 1. A method for fabricating an acoustic resonator device , the method comprising:providing a substrate having a substrate surface region;forming a nucleation layer overlying the substrate surface region and being characterized by nucleation growth parameters;{'b': '10', 'sup': 12', '2, 'forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein forming the strained single crystal piezoelectric layer includes an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer; wherein the strained single crystal piezoelectric material has a thickness from about 10 nm to about 10 um and is characterized by a dislocation density less than defects/cm, and an x-ray rocking curve full width at half ...

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Номер записи: 70
07-11-2019 дата публикации

5G n41 2.6 GHz BAND ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190341906A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first piezoelectric material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 71
29-10-2020 дата публикации

EFFECTIVE COUPLING COEFFICIENTS FOR STRAINED SINGLE CRYSTAL EPITAXIAL FILM BULK ACOUSTIC RESONATORS

Номер: US20200343875A1
Автор: SHEALY Jeffrey B.
Принадлежит:

In an array of single crystal acoustic resonators, the effective coupling coefficient of first and second strained single crystal filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. The coefficients can be tailored by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers or by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Further, a strained piezoelectric layer can be formed overlying a nucleation layer characterized by initial surface etching and piezoelectric layer deposition parameters being configured to modulate a strain condition in the strained piezoelectric layer to adjust piezoelectric properties for improved performance in specific applications. 1. A method of fabricating an array of acoustic resonators comprising the steps of:selecting a first target frequency response and a first target effective coupling coefficient for operation of a first single crystal film bulk acoustic resonator (FBAR) filter of the array of acoustic resonators;selecting a second target frequency response and a second target effective coupling coefficient for operation of a second single crystal FBAR filter of the array of acoustic resonators, said first target effective coupling coefficient being degraded relative to said second target effective coupling coefficient;determining thicknesses and materials of single crystal piezoelectric and electrode layers for forming said first and second single crystal FBAR filters so as to achieve said first and second target frequency responses and said first and second target effective coupling coefficients, including selecting an increased electrode layer thickness for at least one ...

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Номер записи: 72
20-12-2018 дата публикации

5.9 GHz C-V2X AND DSRC ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20180367113A1
Автор: Jeffrey B. Shealy, Mary Winters, Ramakrishna Vetury, Rohan W. HOULDEN, Shawn R. Gibb
Принадлежит: Akoustis Inc

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

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Номер записи: 73
05-12-2019 дата публикации

MONOLITHIC SINGLE CHIP INTEGRATED RADIO FREQUENCY FRONT END MODULE CONFIGURED WITH SINGLE CRYSTAL ACOUSTIC FILTER DEVICES

Номер: US20190371792A1
Автор: AICHELE David M., BOOMGARDEN Mark D., Gibb Shawn R., SHEALY Jeffrey B., Vetury Ramakrishna
Принадлежит: Akoustis, Inc.

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions. 1. A method for fabricating a monolithic single chip high purity crystal device , integrating multiple circuit functions , the method comprising:providing a substrate having a substrate surface region;forming a first single crystal piezoelectric layer overlying the substrate surface region;processing the first single crystal piezoelectric layer to form one or more active or passive device components;forming one or more second single crystal piezoelectric layers overlying the first single crystal piezoelectric layer; andprocessing the one or more second single crystal piezoelectric layers to form one or more active or passive device components;wherein the first single crystal piezoelectric layer and the one or more second single crystal piezoelectric layers form a monolithic piezoelectric stack integrating multiple circuit functions.2. The method of wherein the substrate is selected from one of the following: a silicon substrate claim 1 , a sapphire substrate claim 1 , silicon carbide substrate claim 1 , a GaN bulk substrate claim 1 , a GaN template claim 1 , an AlN bulk claim 1 , an AlN template claim 1 , and an AlGaN template.3. The method of wherein the first single crystal piezoelectric layer comprises an aluminum nitride (AlN) material used for the RF filter functionality claim 1 , and wherein the first single crystal piezoelectric layer is characterized by a thickness of about 0 ...

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Номер записи: 74
05-12-2019 дата публикации

5.5 GHz WI-FI COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

Номер: US20190372549A1
Автор: AICHELE David M., HOULDEN Rohan W., SHEALY Jeffrey B., SHEN Ya
Принадлежит:

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device having a ladder configuration , the device comprising:a series configuration including at least a first resonator, a second resonator, a third resonator, and a fourth resonator; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first piezoelectric material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'wherein the first resonator comprises'} a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

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Номер записи: 75
05-12-2019 дата публикации

EFFECTIVE COUPLING COEFFICIENTS FOR STRAINED SINGLE CRYSTAL EPITAXIAL FILM BULK ACOUSTIC RESONATORS

Номер: US20190372555A1
Автор: Gibb Shawn R., SHEALY Jeffrey B.
Принадлежит:

In an array of single crystal acoustic resonators, the effective coupling coefficient of first and second strained single crystal filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. The coefficients can be tailored by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers or by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Further, a strained piezoelectric layer can be formed overlying a nucleation layer characterized by nucleation growth parameters, which can be configured to modulate a strain condition in the strained piezoelectric layer to adjust piezoelectric properties for improved performance in specific applications. 1. A method of fabricating an array of acoustic resonators comprising the steps of:selecting a first target frequency response and a first target effective coupling coefficient for operation of a first single crystal film bulk acoustic resonator (FBAR) filter;selecting a second target frequency response and a second target effective coupling coefficient for operation of a second single crystal FBAR filter, said first target effective coupling coefficient being substantially degraded relative to said second target effective coupling coefficient;determining thicknesses and materials of single crystal piezoelectric and electrode layers for forming said first and second single crystal FBAR filters so as to achieve said first and second target frequency responses and said first and second target effective coupling coefficients, including selecting an increased electrode layer thickness for at least one electrode layer of said first single crystal FBAR filter, said increased electrode layer ...

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Номер записи: 76
19-12-2019 дата публикации

WAFER SCALE PACKAGING

Номер: US20190385893A1
Автор: SHEALY Jeffrey B.
Принадлежит:

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures. 1. A method of wafer scale packaging Group III-Nitride containing devices , the method comprising:providing a substrate member having a surface region;forming a thickness of Group III-Nitride material overlying the surface region;forming an insulating material overlying a portion of the thickness of Group III-Nitride material;forming a contact region to expose a portion of the thickness of the Group III-Nitride material; andforming a pillar structure comprising a copper material within the contact region.2. The method of further comprising forming a thickness of solder material overlying the pillar structure to cause formation of a solder bump; andbonding the solder bump to a contact member on a substrate structure.3. The method of wherein the Group III-Nitride material is deposited by LPCVD; andfurther comprising using dichlorosilane (DCS), provided with or without Ammonia, to clean and prepare a surface of the Group III-Nitride material for single crystal growth.4. The method of wherein the Group III-Nitride material is selected from at least one of a single crystal oxide including a high K dielectric claim 1 , ZnO claim 1 , or MgO.5. The method of wherein the Group III-Nitride material is characterized by X-ray diffraction with clear peak at a detector angle (2 ...

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Номер записи: 77
03-11-2022 дата публикации

METHODS OF FORMING GROUP III PIEZOELECTRIC THIN FILMS VIA REMOVAL OF PORTIONS OF FIRST SPUTTERED MATERIAL

Номер: US20220352456A1
Автор: KIM Dae Ho, Kochhar Abhay Saranswarup, Moe Craig, SHEALY Jeffrey B., Winters Mary
Принадлежит:

A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion. 1. A method of forming a piezoelectric thin film , the method comprising:providing an inert gas and a nitrogen process gas to a process chamber including a substrate and a target comprising one or more Group III elements;sputtering the one or more Group III elements from the target onto a first surface of the substrate to provide the piezoelectric thin film including a nitride of the one or more Group III elements on the first surface of the substrate;forming a first electrode on the piezoelectric thin film;forming a sacrificial layer on the first electrode;processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film comprises a first crystalline quality portion of the piezoelectric thin film;removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion of the piezoelectric thin film that is ...

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Номер записи: 78
03-11-2022 дата публикации

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

Номер: US20220352863A1
Автор: FALLON Kenneth, KIM Dae Ho, SHEALY Jeffrey B., Winters Mary
Принадлежит:

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities. 1. A bulk acoustic resonator device , the device comprising:a multilayer reflector structure including two pairs of a low impedance material layer and a high impedance material layer;a first electrode including tungsten overlying the multilayer reflector structure;a piezoelectric film including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure;a second electrode including tungsten overlapping the piezoelectric film, overlapping the first electrode, and overlying the multilayer reflector, the second electrode having a thickness and including an electrode cavity, the thickness of the second electrode away from the electrode cavity being thicker when compared to the thickness of the second electrode within the electrode cavity, the electrode cavity of the second electrode overlying the overlapping portions of the second electrode, the piezoelectric film, and the first electrode; anda passivation layer including silicon nitride overlying the second electrode.2. The device of claim 1 , further comprising a mass loaded structure overlying the second electrode claim 1 , and located away from the overlapping area of the second electrode including tungsten ...

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Номер записи: 79
03-11-2022 дата публикации

RF BAW RESONATOR FILTER ARCHITECTURE FOR 6.5GHZ WI-FI 6E COEXISTENCE AND OTHER ULTRA-WIDEBAND APPLICATIONS

Номер: US20220352866A1
Автор: AICHELE David M., Granado Guillermo Moreno, HOULDEN Rohan W., SHEALY Jeffrey B.
Принадлежит:

A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor. 1. (canceled)2. The device of claim 27 , wherein the piezoelectric material including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure includes an essentially single crystal aluminum scandium nitride (AlScN) bearing material.3. The device of claim 27 , wherein the piezoelectric material including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure includes a polycrystalline aluminum scandium nitride (AlScN) bearing material.4. The device of claim 27 , wherein passivation material including nitride overlying the second electrode includes a silicon nitride bearing material or an oxide bearing material configured with a silicon nitride material.57-. (canceled)8. The device of claim 11 , wherein a plurality of parallel resonators are coupled between the fourth node and the electrical ground.9. The device of claim 32 , the circuit comprising a first node and a second node claim 32 , wherein a plurality of series resonators are coupled between the ...

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Номер записи: 80
29-12-2022 дата публикации

METHODS OF FORMING EPITAXIAL AlScN RESONATORS WITH SUPERLATTICE STRUCTURES INCLUDING AlGaN INTERLAYERS AND VARIED SCANDIUM CONCENTRATIONS FOR STRESS CONTROL AND RELATED STRUCTURES

Номер: US20220416756A1
Автор: Leathersich Jeffrey M., Moe Craig, SHEALY Jeffrey B.
Принадлежит:

A method of forming a resonator structure can be provided by forming one or more template layers on a substrate, (a) epitaxially forming an AlScN layer on the template layer to a first thickness, (b) epitaxially forming an AlGaN interlayer on the AlScN layer to a second thickness that is substantially less than the first thickness, and repeating operations (a) and (b) until a total thickness of all AlScN layers and AlGaN interlayers provides a target thickness for a single crystal AlScN/AlGaN superlattice resonator structure on the template layer. 1. A method of forming a resonator structure , the method comprising:forming one or more template layers on a substrate;(a) epitaxially forming an AlScN layer on the template layer to a first thickness;(b) epitaxially forming an AlGaN interlayer on the AlScN layer to a second thickness that is substantially less than the first thickness; andrepeating operations (a) and (b) until a total thickness of all AlScN layers and AlGaN interlayers provides a target thickness for a single crystal AlScN/AlGaN superlattice resonator structure on the template layer.2. The method of wherein the second thickness is about one tenth of the first thickness.3. The method of wherein the first thickness is about 20 nm claim 2 , the second thickness is about 2 nm claim 2 , and the total thickness is greater than about 40 nm.4. The method of wherein the template layer comprises AlGaN and epitaxially forming the AlGaN interlayer comprises:epitaxially forming the AlGaN interlayer on the AlScN layer with a concentration of Ga that matches a Ga concentration in the template layer.5. The method of wherein the template layer is AlGaN and the AlGaN interlayer is AlGaN.6. The method of wherein a reaction chamber in which the resonator structure is formed is maintained between 800 and 950 degrees Centigrade when operations (a) and (b) are performed.7. The method of wherein repeating operations (a) and (b) further comprises:partitioning the target ...

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Номер записи: 81
25-07-2017 дата публикации

Mobile communication device configured with a single crystal piezo resonator structure

Номер: US9716581B2
Автор: Jeffrey B. Shealy
Принадлежит: Akoustis Inc

A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

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Номер записи: 82
25-04-2006 дата публикации

Epitaxy/substrate release layer

Номер: US7033961B1
Автор: Brook Hosse, David Grider, Jeffrey B. Shealy, Joseph Smart, Shawn Gibb
Принадлежит: RF Micro Devices Inc

The present invention relates to an epitaxial structure having one or more structural epitaxial layers, including a gallium nitride (GaN) layer, which is deposited on a substrate, and a method of growing the epitaxial structure, wherein the structural epitaxial layers can be separated from the substrate. In general, a sacrificial epitaxial layer is deposited on the substrate between the substrate and the structural epitaxial layers, and the structural epitaxial layers are deposited on the sacrificial layer. After growth, the structural epitaxial layers are separated from the substrate by oxidizing the sacrificial layer. The structural epitaxial layers include a nucleation layer deposited on the sacrificial layer and a gallium nitride layer deposited on the nucleation layer. Optionally, the oxidation of the sacrificial layer may also oxidize the nucleation layer.

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Номер записи: 83
13-07-2021 дата публикации

Front end module for 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit

Номер: US11063576B2
Автор: David M. AICHELE, Jeffrey B. Shealy, Rohan W. HOULDEN, Shawn R. Gibb
Принадлежит: Akoustis Inc

A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6 GHz PA, a 5.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

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Номер записи: 84
16-08-2022 дата публикации

5G n41 2.6 GHz band acoustic wave resonator RF filter circuit

Номер: US11418169B2
Автор: David M. AICHELE, Jeffrey B. Shealy, Rohan W. HOULDEN
Принадлежит: Akoustis Inc

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

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Номер записи: 85
23-03-2021 дата публикации

Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices

Номер: US10957688B2
Автор: David M. AICHELE, Jeffrey B. Shealy, Mark D. BOOMGARDEN, Ramakrishna Vetury, Shawn R. Gibb
Принадлежит: Akoustis Inc

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

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Номер записи: 86
08-12-2022 дата публикации

Acoustic wave resonator rf filter circuit device

Номер: US20220393667A1
Автор: David M. AICHELE, Jeffrey B. Shealy, Mary Winters, Michael D. HODGE, Ramakrishna Vetury, Rohan W. HOULDEN, Ya SHEN
Принадлежит: Akoustis Inc

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

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Номер записи: 87
13-07-2021 дата публикации

Method of manufacture for single crystal acoustic resonator devices using micro-vias

Номер: US11063204B2
Автор: Alexander Y. FELDMAN, Jeffrey B. Shealy, Mark D. BOOMGARDEN, Michael P. Lewis, Ramakrishna Vetury
Принадлежит: Akoustis Inc

A method of manufacture for an acoustic resonator device. The method can include forming a topside metal electrode overlying a piezoelectric substrate with a piezoelectric layer and a seed substrate. A topside micro-trench can be formed within the piezoelectric layer and a topside metal can be formed overlying the topside micro-trench. This topside metal can include a topside metal plug formed within the topside micro-trench. A first backside trench can be formed underlying the topside metal electrode, and a second backside trench can be formed underlying the topside micro-trench. A backside metal electrode can be formed within the first backside trench, while a backside metal plug can be formed within the second backside trench and electrically coupled to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside trench, and the backside metal plug form a micro-via.

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Номер записи: 88
08-02-2022 дата публикации

Single crystal acoustic resonator and bulk acoustic wave filter

Номер: US11245376B2
Автор: Jeffrey B. Shealy
Принадлежит: Akoustis Inc

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

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Номер записи: 89
27-05-2021 дата публикации

HIGH PERFORMANCE ACOUSTIC VOLUME WAVE RESONATOR FILTER DEVICES

Номер: DE112019004304T5
Автор: Jeffrey B. Shealy, Joel M. MORGAN, Rohan W. HOULDEN, Shawn R. Gibb
Принадлежит: Akoustis Inc

Akustische Resonatorvorrichtung und Verfahren dafür. Die Vorrichtung umfasst ein Substratelement, das einen Luft-Hohlraumbereich hat. Eine piezoelektrische Schicht ist mit dem Substratelement verbunden und über diesem und dem Luft-Hohlraumbereich liegend eingerichtet. Die piezoelektrische Schicht ist derart eingerichtet, dass sie durch eine Röntgen-Rockingkurve mit einer Halbwertsbreite (FWHM) gekennzeichnet ist, die im Bereich von 0 Grad bis 2 Grad liegt. Eine obere Elektrode ist mit der piezoelektrischen Schicht verbunden und über dieser liegend eingerichtet, wohingegen eine untere Elektrode mit der piezoelektrischen Schicht verbunden und innerhalb des Luft-Hohlraumbereichs unter dieser liegend eingerichtet ist. Die Konfiguration der Materialien der piezoelektrischen Schicht und des Substratelements zum Erzielen des speziellen FWHM-Bereichs verbessert eine Eigenschaft der Fähigkeit zur Leistungsverarbeitung und eine Eigenschaft der Leistungshaltbarkeit. Acoustic resonator apparatus and methods therefor. The device includes a substrate member that has an air void area. A piezoelectric layer is connected to the substrate element and is set up overlying it and the air cavity area. The piezoelectric layer is set up in such a way that it is characterized by an X-ray rocking curve with a half-width (FWHM) that is in the range from 0 degrees to 2 degrees. An upper electrode is connected to the piezoelectric layer and is arranged to lie above it, whereas a lower electrode is connected to the piezoelectric layer and is arranged to lie beneath the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM area improves a property of power processing ability and a property of power durability.

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Номер записи: 90
26-02-2019 дата публикации

Method of manufacture for single crystal acoustic resonator devices using micro-vias

Номер: US10217930B1
Автор: Alexander Y. FELDMAN, Jeffrey B. Shealy, Mark D. BOOMGARDEN, Michael P. Lewis, Ramakrishna Vetury
Принадлежит: Akoustis Inc

A method of manufacture for an acoustic resonator device. The method can include forming a topside metal electrode overlying a piezoelectric substrate with a piezoelectric layer and a seed substrate. A topside micro-trench can be formed within the piezoelectric layer and a topside metal can be formed overlying the topside micro-trench. This topside metal can include a topside metal plug formed within the topside micro-trench. A first backside trench can be formed underlying the topside metal electrode, and a second backside trench can be formed underlying the topside micro-trench. A backside metal electrode can be formed within the first backside trench, while a backside metal plug can be formed within the second backside trench and electrically coupled to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside trench, and the backside metal plug form a micro-via.

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Номер записи: 91
09-05-2023 дата публикации

Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process

Номер: US11646710B2
Автор: Dae Ho Kim, Jeffrey B. Shealy, Mary Winters, Ramakrishna Vetury
Принадлежит: Akoustis Inc

A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

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Номер записи: 92
27-09-2022 дата публикации

Acoustic wave resonator RF filter circuit device

Номер: US11456723B2
Автор: David M. AICHELE, Jeffrey B. Shealy, Mary Winters, Michael D. HODGE, Ramakrishna Vetury, Rohan W. HOULDEN, Ya SHEN
Принадлежит: Akoustis Inc

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

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Номер записи: 93
01-12-2020 дата публикации

Mobile communication device configured with a single crystal piezo resonator structure

Номер: US10855243B2
Автор: Jeffrey B. Shealy
Принадлежит: Akoustis Inc

A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

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Номер записи: 94
06-06-2023 дата публикации

Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process

Номер: US11671067B2
Автор: Dae Ho Kim, Jeffrey B. Shealy, Mary Winters, Ramakrishna Vetury
Принадлежит: Akoustis Inc

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

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Номер записи: 95
15-04-2021 дата публикации

Elliptical structure for bulk acoustic wave resonator

Номер: US20210111695A1
Автор: Dae Ho Kim, James Blanton SHEALY, Jeffrey B. Shealy, Pinal Patel, Rohan W. HOULDEN
Принадлежит: Akoustis Inc

An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.

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Номер записи: 96
09-05-2023 дата публикации

Acoustic wave resonator, RF filter circuit device and system

Номер: US11646717B2
Автор: David M. AICHELE, Jeffrey B. Shealy, Mary Winters, Michael D. HODGE, Ramakrishna Vetury, Rohan W. HOULDEN, Shawn R. Gibb
Принадлежит: Akoustis Inc

An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.330 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

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Номер записи: 97
18-03-1998 дата публикации

Junction high electron mobility transistor-heterojunction bipolar transistor (jhemt-hbt) monolithic microwave integrated circuit (mmic) and single growth method of fabrication

Номер: EP0829906A2
Автор: Jeffrey B. Shealy, Mehran Matloubian
Принадлежит: HE Holdings Inc, Hughes Aircraft Co, Hughes Electronics Corp

A highly uniform, planar and high speed JHEMT-HBT MMIC (20) is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate (26). The composite emitter-channel layer (30) includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter (34) and the JHEMT's channel (42), thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact (52, 54, 56), planar HBT base (46, 50) and JHEMT gate (48, 51) contacts, and planar HBT emitter (34) and JHEMT source (36) and drain (38) contacts.

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Номер записи: 98
10-08-2023 дата публикации

Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process

Номер: US20230253943A1
Автор: Dae Ho Kim, Jeffrey B. Shealy, Mary Winters, Ramakrishna Vetury
Принадлежит: Akoustis Inc

A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

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Номер записи: 99
27-10-2022 дата публикации

Methods of forming group iii piezoelectric thin films via sputtering

Номер: US20220344576A1
Автор: Craig Moe, Jeffrey B. Shealy, Mary Winters
Принадлежит: Akoustis Inc

A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).

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Номер записи: 100